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Sample records for frequency reactive magnetron

  1. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  2. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  3. Formation of dielectric silicon compounds by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.

  4. Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

    NASA Astrophysics Data System (ADS)

    Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Jacq, S.; Traoré-Mantion, S.; Sharaiha, A.

    2015-03-01

    In the search for new dielectric and ferroelectric compounds, we were interested in the perovskite (Sr1-xLax)2(Ta1-xTix)2O7 solid solution with ferroelectric end members Sr2Ta2O7 (TCurie=-107 °C) and La2Ti2O7 (TCurie=1461 °C). In order to achieve a Curie temperature close to room temperature, the formulation with x=0.01 was chosen and synthetized as thin films by reactive radio-frequency magnetron sputtering. In oxygen rich plasma, a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 film is deposited, characterized by a band-gap Eg=4.75 eV and an (1 1 0) epitaxial growth on (0 0 1)MgO substrate. The use of nitrogen rich plasma allows to synthesize (Sr0.99La0.01)(Ta0.99Ti0.01)O2N oxynitride films, with band gap Eg~2.10 eV and a polycrystalline, textured or epitaxial growth on (0 0 1)MgO substrate. Nitrogen-substoichiometric oxynitride films with larger lattice cells are produced for low dinitrogen percentages in the sputtering plasma.

  5. Multi-frequency recirculating planar magnetrons

    NASA Astrophysics Data System (ADS)

    Greening, Geoffrey B.; Jordan, Nicholas M.; Exelby, Steven C.; Simon, David H.; Lau, Y. Y.; Gilgenbach, Ronald M.

    2016-08-01

    The multi-frequency recirculating planar magnetron (MFRPM) is the first magnetron capable of simultaneous generation of significantly different output frequencies (1 and 2 GHz) in a single operating pulse. Design and simulation of a prototype MFRPM were followed by hardware fabrication and experimental verification using the Michigan Electron Long Beam Accelerator with a Ceramic insulator at -300 kV, 1-5 kA, and 0.14-0.23 T axial magnetic field. Preliminary results demonstrated simultaneous generation of microwave pulses near 1 GHz and 2 GHz at powers up to 44 MW and 21 MW, respectively, with peak total efficiencies up to 9%.

  6. Rotating cylindrical magnetron sputtering: Simulation of the reactive process

    SciTech Connect

    Depla, D.; Mahieu, S.; Van Aeken, K.; Leroy, W. P.; Haemers, J.; De Gryse, R.; Li, X. Y.; Bogaerts, A.

    2010-06-15

    A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

  7. Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Kannan, R.; Loganathan, S.

    2014-05-01

    Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300 V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.

  8. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, M.; Johnson, R.P.; Popovic, M.; Moretti, A.; /Fermilab

    2009-05-01

    Magnetrons are low-cost highly-efficient microwave sources, but they have several limitations, primarily centered about the phase and frequency stability of their output. When the stability requirements are low, such as for medical accelerators or kitchen ovens, magnetrons are the very efficient power source of choice. But for high energy accelerators, because of the need for frequency and phase stability - proton accelerators need 1-2 degrees source phase stability, and electron accelerators need .1-.2 degrees of phase stability - they have rarely been used. We describe a novel variable frequency cavity technique which will be utilized to phase and frequency lock magnetrons.

  9. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  10. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, Michael; Johnson, Rolland

    2014-09-12

    There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

  11. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  12. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NASA Astrophysics Data System (ADS)

    van Hattum, E. D.

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, where the SiOx layer is used as the charge retention layer on the drums for copying and printing devices. The thesis describes investigations of the plasma and of processes taking place on the sputter target and on the SiOx growth surface in the room temperature, RF reactive magnetron plasma sputter deposition technology. The sputtering target consists of silicon and the reactive atmosphere consists of an Ar/O2 mixture. The composition of the grown SiOx layers has been varied between x=0 and x=2 by variation of the O2 partial pressure. The characteristics of the growth process have been related to the nanostructural properties of the grown films. The deposition system enables the characterisation of the plasma (Langmuir probe, energy resolved mass spectrometer) and of the growing film (Elastic Recoil Detection (ERD), Fourier transform infrared absorption spectroscopy) and is connected to a beamline of a 6MV tandem van de Graaff accelerator. Also Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy have been applied. It is shown how ERD can be used as a real-time in-situ technique. The thesis presents spatially resolved values of the ion density, electron temperature and the quasi-electrostatic potential, determined using a Langmuir probe. The plasma potential has a maximum about 2 cm from the cathode erosion area, and decreases (more than 200 V typically) towards the floating sputter cathode. The potential decreases slightly in the direction towards the grounded growth surface and the positive, mainly Ar+, ions created in the large volume of the plasma closest to the substrate are accelerated towards the growth surface. These ions obtain a few eV of

  13. Analysis of Low Frequency Oscillations in Magnetron Injection Guns

    NASA Astrophysics Data System (ADS)

    Pu, Youlei; Luo, Yong; Yan, Ran; Liu, Guo; Jiang, Wei

    2012-02-01

    In our gyro-TWT experiments, low-frequency oscillations (LFOs) had been observed. LFOs is a physical phenomenon usually caused by the electrons trapped between the magnetron injection guns (MIGs) and the interaction region. In this paper, the formation procedure and physical mechanism of LFOs are reported. Available methods including optimizing the magnetic field distribution in the beam compression region and loading bevel cuts on the second anode are involved to capture the trapped electrons, suppress the LFOs and improve the helical electron beam quality. Simulations and experimental results are in good agreement with each other and also reveal the reasonableness of this means. Finally, the influence of current capture ratio on LFOs and the beam quality are studied. With the current capture ratio increasing, the amplitude of LFOs decreases, the pitch factor maintains a constant about 1.2 and we also demonstrate a low transverse velocity spread about 3%.

  14. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  15. Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Shayestehaminzadeh, Seyedmohammad E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.; Olafsson, Sveinn

    2015-11-15

    This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  16. Development of an automatic frequency measurement system for RF linear accelerator magnetrons

    NASA Astrophysics Data System (ADS)

    Cha, Sungsu; Kim, Yujong; Lee, Byeong-No; Joo, Youngwoo; Lee, Soo Min; Lee, Byung Cheol; Cha, Hyungki; Lee, Seung Hyun; Park, Hyung Dal; Song, Ki Beak

    2015-06-01

    An X-band [9300 MHz] magnetron frequency measurement system was developed for the electron linear accelerators at the Korean Atomic Energy Research Institute (KAERI). The measurement and the display of the RF frequency during the accelerator operation time is a crucial factor for continuous operation for two key reasons. Firstly, if the RF frequency of the magnetron is not known, then the amount of frequency tuning cannot be known, and the appropriate RF power cannot be supplied to the accelerating-structure. Second, values including the accelerating-structure's coolingwater temperature setting, the solenoid-magnet's cooling-water temperature setting, and the tuning of the source's (magnetron's) frequency can be undertaken because the RF frequency is used as the reference. A key component of the accelerator is the accelerating-structure. The volume of the accelerating-structure changes according to the environment's temperature; there, the resonance frequency of the accelerating-structure varies. When the resonance frequency of the accelerator is changed, the output becomes unstable, and a low beam energy is obtained. Accordingly, was developed a magnetron frequency-measuring device in order to stabilize the accelerator's operation. The results of the test demonstrate that the measurement's accurate up to 100 kHz, which enables the provision of an accurate RF power to the accelerating -structure. In this paper, we discuss the RF frequency measurement system for the magnetron to enable a more stable accelerator operation in a linac.

  17. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    SciTech Connect

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M.

    2004-08-02

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

  18. Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering

    SciTech Connect

    Rahamathunnisa, M.; Cameron, D. C.

    2009-03-15

    The ion fluxes and energies which impinge on the substrate during the deposition of chromium nitride by asymmetric bipolar pulsed dc reactive magnetron sputtering have been analyzed using energy resolved mass spectrometry. It has been found that there is a remarkable increase in ion flux at higher pulse frequencies and that the peak ion energy is directly related to the positive voltage overshoot of the target voltage. The magnitude of the metal flux depositing on the substrate is consistent with a 'dead time' of {approx}0.7 {mu}s at the start of the on period. The variation of the ion flux with pulse frequency has been explained by a simple model in which the ion density during the on period has a large peak which is slightly delayed from the large negative voltage overshoot which occurs at the start of the on pulse due to increased ionization at that time. This is consistent with the previously observed phenomena in pulsed sputtering.

  19. Theoretical investigation of resonant frequencies of unstrapped magnetron with arbitrary side resonators

    SciTech Connect

    Yue, Song; Zhang, Zhao-chuan; Gao, Dong-ping

    2015-04-15

    In this paper, a sector steps approximation method is proposed to investigate the resonant frequencies of magnetrons with arbitrary side resonators. The arbitrary side resonator is substituted with a series of sector steps, in which the spatial harmonics of electromagnetic field are also considered. By using the method of admittance matching between adjacent steps, as well as field continuity conditions between side resonators and interaction regions, the dispersion equation of magnetron with arbitrary side resonators is derived. Resonant frequencies of magnetrons with five common kinds of side resonators are calculated with sector steps approximation method and computer simulation softwares, in which the results have a good agreement. The relative error is less than 2%, which verifies the validity of sector steps approximation method.

  20. Effect of oxygen flow rate on the properties of SiOx films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lai, Fachun; Li, Ming; Wang, Haiqian; Jiang, Yousong; Song, Yizhou

    2005-08-01

    SiOx (x=0--2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate (OFR) changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.

  1. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    NASA Astrophysics Data System (ADS)

    Shimizu, T.; Villamayor, M.; Lundin, D.; Helmersson, U.

    2016-02-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar-N2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf-N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail.

  2. Study of Niobium Nitride Films Produced by DC Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hotovy, I.; Buc, D.; Brcka, J.; Srnanek, R.

    1997-05-01

    Niobium nitride films were prepared onto unheated GaAs and SiO2 substrates by dc reactive magnetron sputtering from a niobium metal target in an Ar + N2 mixed atmosphere. During deposition, the nitrogen content in the gas mixture was varied from 0 to 20%. The effects of the different nitrogen content and high-temperature annealing (with annealing temperatures ranging from 850 to 950 °C) on the composition, structural and electrical properties of the films were studied using Auger electron spectroscopy (AES), X-ray diffraction (XRD), transmission electron microscopy (TEM) and resistivity measurement. The correlations between technological parameters and film properties, structure and composition were established.

  3. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  4. Electrochromic properties of niobium oxide thin films prepared by radio-frequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Maruyama, Toshiro; Arai, Susumu

    1993-08-01

    Electrochromic niobium oxide thin films were prepared by a radio-frequency magnetron sputtering method. Amorphous Nb2O5 thin films deposited at radio-frequency power 100 W showed the electrochromic behavior: Reduction and oxidation of the films in 0.1 M Na2CO3+0.1 M NaHCO3 buffer solution resulted in coloration and bleaching, respectively. Coulometry indicated that the coloration efficiency was 10 cm2/C.

  5. The spatial distribution of negative oxygen ion densities in a dc reactive magnetron discharge

    NASA Astrophysics Data System (ADS)

    Scribbins, Steven; Bowes, Michael; Bradley, James W.

    2013-01-01

    Using Langmuir probe-assisted eclipse laser photodetachment, the spatial distribution of O- densities in the bulk plasma of magnetron sputter tool has been determined for a range of pressures, 0.79 to 2.40 Pa. The discharge was operated in dc (200 W) with a Ti target and a fixed oxygen-argon pressure ratio of 0.2, in poisoned mode. Measurements show significant O- densities occupying an annulus downstream from the magnetic trap in regions of most positive plasma potential. With increasing pressure the region of high O- density expands and the peak densities increase reaching ˜1.5 × 1016 m-3 at 2.40 Pa, corresponding to an O- to electron density ratio (electronegativity α) of ˜2. Outside the area of dense negative ions, and in regions of the magnetic trap accessible to our probe we measure α < 0.2. The results show that these reactive magnetron plasmas, utilized for oxide film production, to be highly electronegative in regions close to the substrate.

  6. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-01

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al2O3, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  7. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    NASA Astrophysics Data System (ADS)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  8. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  9. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  10. Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

    NASA Technical Reports Server (NTRS)

    Kusano, E.; Theil, J. A.; Thornton, John A.

    1988-01-01

    It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

  11. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    SciTech Connect

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-28

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  12. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  13. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  14. Deposition of ultrahard Ti-Si-N coatings by pulsed high-current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Zakharov, A. N.; Rabotkin, S. V.; Solov'ev, A. A.

    2016-02-01

    We report on the results of investigation of properties of ultrahard Ti-Si-N coatings deposited by pulsed high-current magnetron reactive sputtering (discharge pulse voltage is 300-900 V, discharge pulse current is up to 200 A, pulse duration is 10-100 μs, and pulse repetition rate is 20-2000 Hz). It is shown that for a short sputtering pulse (25 μs) and a high discharge current (160 A), the films exhibit high hardness (66 GPa), wear resistance, better adhesion, and a lower sliding friction coefficient. The reason is an enhancement of ion bombardment of the growing coating due to higher plasma density in the substrate region (1013 cm-3) and a manifold increase in the degree of ionization of the plasma with increasing peak discharge current (mainly due to the material being sputtered).

  15. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  16. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  17. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  18. In situ deposition of PbTiO3 thin films by direct current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Iljinas, Aleksandras; Marcinauskas, Liutauras; Stankus, Vytautas

    2016-09-01

    The lead titanate thin films were deposited using in situ layer-by-layer reactive magnetron sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO2/Si) substrates at 450-600 °C temperatures using Ti2O seed layer. The influence of the substrate temperature on the surface morphology, phase composition, and electrical properties of PbTiO3 films were investigated. Experimental results demonstrated that the deposition at higher substrate temperatures resulted in the formation of films with the lower surface roughness values. The increase of the substrate temperature has no effect on the tetragonality value of the films. The preferential orientation in the films was changed and the crystallites size slightly increased with the increased substrate temperature from 450 °C to 550 °C. Hysteresis measurements show that the films exhibit ferroelectric properties with a maximum coercive field of Ec = 150 kV/cm and of Pr = 60 μC/cm2. Coercive field dependence on the frequency measurements indicated that the creep regime of domain wall motions dominated till 1 kHz of frequency.

  19. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  20. Structure and Properties of Ti-O-N Coatings Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Konischev, M. E.; Kuzmin, O. S.; Pustovalova, A. A.; Morozova, N. S.; Evdokimov, K. E.; Surmenev, R. A.; Pichugin, V. F.; Epple, M.

    2014-02-01

    Results of an experimental study of the optical characteristics of gas discharges are presented. The study was aimed at optimizing the operating modes of a mid-frequency magnetron sputtering system to efficiently deposit Ti-O-N coatings. The conditions for maintaining the intensity of the chosen spectroscopic lines that ensure synthesis of titanium oxide and titanium oxynitride coatings have been revealed. The morphology, structure, contact angle, and free surface energy of titanium oxide and titanium oxynitride coatings on type 12Kh18N10T stainless steel substrates were examined by using scanning and transmission electron microscopy and infrared spectroscopy, and by measuring the wetting angle. The results of examination of the structure and properties of the synthesized films and their physicomechanical and optical characteristics are given.

  1. SiNx Coatings Deposited by Reactive High Power Impulse Magnetron Sputtering: Process Parameters Influencing the Nitrogen Content.

    PubMed

    Schmidt, Susann; Hänninen, Tuomas; Goyenola, Cecilia; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Goebbels, Nico; Tobler, Markus; Högberg, Hans

    2016-08-10

    Reactive high power impulse magnetron sputtering (rHiPIMS) was used to deposit silicon nitride (SiNx) coatings for biomedical applications. The SiNx growth and plasma characterization were conducted in an industrial coater, using Si targets and N2 as reactive gas. The effects of different N2-to-Ar flow ratios between 0 and 0.3, pulse frequencies, target power settings, and substrate temperatures on the discharge and the N content of SiNx coatings were investigated. Plasma ion mass spectrometry shows high amounts of ionized isotopes during the initial part of the pulse for discharges with low N2-to-Ar flow ratios of <0.16, while signals from ionized molecules rise with the N2-to-Ar flow ratio at the pulse end and during pulse-off times. Langmuir probe measurements show electron temperatures of 2-3 eV for nonreactive discharges and 5.0-6.6 eV for discharges in transition mode. The SiNx coatings were characterized with respect to their composition, chemical bond structure, density, and mechanical properties by X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction, and nanoindentation, respectively. The SiNx deposition processes and coating properties are mainly influenced by the N2-to-Ar flow ratio and thus by the N content in the SiNx films and to a lower extent by the HiPIMS frequencies and power settings as well as substrate temperatures. Increasing N2-to-Ar flow ratios lead to decreasing growth rates, while the N content, coating densities, residual stresses, and the hardness increase. These experimental findings were corroborated by density functional theory calculations of precursor species present during rHiPIMS.

  2. SiNx Coatings Deposited by Reactive High Power Impulse Magnetron Sputtering: Process Parameters Influencing the Nitrogen Content.

    PubMed

    Schmidt, Susann; Hänninen, Tuomas; Goyenola, Cecilia; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Goebbels, Nico; Tobler, Markus; Högberg, Hans

    2016-08-10

    Reactive high power impulse magnetron sputtering (rHiPIMS) was used to deposit silicon nitride (SiNx) coatings for biomedical applications. The SiNx growth and plasma characterization were conducted in an industrial coater, using Si targets and N2 as reactive gas. The effects of different N2-to-Ar flow ratios between 0 and 0.3, pulse frequencies, target power settings, and substrate temperatures on the discharge and the N content of SiNx coatings were investigated. Plasma ion mass spectrometry shows high amounts of ionized isotopes during the initial part of the pulse for discharges with low N2-to-Ar flow ratios of <0.16, while signals from ionized molecules rise with the N2-to-Ar flow ratio at the pulse end and during pulse-off times. Langmuir probe measurements show electron temperatures of 2-3 eV for nonreactive discharges and 5.0-6.6 eV for discharges in transition mode. The SiNx coatings were characterized with respect to their composition, chemical bond structure, density, and mechanical properties by X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction, and nanoindentation, respectively. The SiNx deposition processes and coating properties are mainly influenced by the N2-to-Ar flow ratio and thus by the N content in the SiNx films and to a lower extent by the HiPIMS frequencies and power settings as well as substrate temperatures. Increasing N2-to-Ar flow ratios lead to decreasing growth rates, while the N content, coating densities, residual stresses, and the hardness increase. These experimental findings were corroborated by density functional theory calculations of precursor species present during rHiPIMS. PMID:27414283

  3. SEMICONDUCTOR DEVICES: An MWCNT-doped SNO2 thin film NO2 gas sensor by RF reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wei, Lin; Shizhen, Huang; Wenzhe, Chen

    2010-02-01

    An MWCNT-doped (multi-walled carbon nanotube) SnO2 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy (SEM) characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped Sn22 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs (p-type) and SnO2 (n-type) semiconductors.

  4. High-frequency magnetic properties of Zn ferrite films deposited by magnetron sputtering

    SciTech Connect

    Guo Dangwei; Zhu Jingyi; Yang Yuancai; Fan Xiaolong; Chai Guozhi; Sui Wenbo; Zhang Zhengmei; Xue Desheng

    2010-02-15

    The effect of thermal annealing on structural and magnetic properties has been investigated for Zn ferrite films deposited on Si (111) substrates using radio frequency magnetron sputtering. The saturation magnetization at room temperature was enhanced upto 303 emu/cm{sup 3} by annealing at relatively low temperature of 200 deg. C and decreased at higher temperatures. The complex permeability {mu}={mu}{sup '}-i{mu}{sup ''} values of the ferrite films as-deposited and annealed at 200 and 400 deg. C were measured at frequency upto 5 GHz. These films exhibited better high-frequency properties, especially, the film annealed at 200 deg. C had a large {mu}{sup '} of 19.5 and high resonance frequency f{sub r} of 1.61 GHz. And the reason was investigated preliminarily based on the bianisotropy model.

  5. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  6. Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering.

    PubMed

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kun-Hsien; Lee, Cheng-Chung

    2011-05-01

    Aluminum nitride films were deposited by alternating-current dual reactive magnetron sputtering. The influence of different nitrogen flow and working pressures at a sputtering power of 5 kW on the refractive index, extinction coefficient, crystalline structure, residual stress, and surface roughness of aluminum nitride films was discussed. The aluminum nitride film would have high refractive index, low extinction coefficient and small residual stress at suitable nitrogen flow rate and low working pressure.

  7. Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

    SciTech Connect

    Reddy, R. Subba; Sreedhar, A.; Uthanna, S.

    2015-08-28

    Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was in the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.

  8. Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-06-05

    Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

  9. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  10. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  11. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  12. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  13. Synthesis and characterization of nanocrystalline Ti(1-x)Al(x)N by reactive magnetron sputtering.

    PubMed

    Jose, Feby; Ramaseshan, R; Dash, S; Dasgupta, Arup; Saroja, S; Tyagi, A K

    2009-09-01

    Ti(1-x)Al(x)N metastable films were synthesized by reactive magnetron co-sputtering with different Ti to Al ratios. XRD studies showed that as-deposited films were crystalline for concentrations of Al (35, 40, 55 and 64%) and become amorphous at 81% Al. These films were annealed at 1073 K to study the phase separation. Films up to 55% Al did not show any phase separation after annealing. But films with 64% Al splits into c-TiAIN and c-AIN, whereas films with 81% Al split into cubic-TiN and hex-AIN. Distribution of crystallites and their size were analyzed by TEM. High density of crystallites with dimensions between 3-11 nm was dispersed in amorphous matrix for 64% Al films. Nanoindentation technique was used to determine the mechanical properties of these films without substrate effect. Maximum hardness obtained for as deposited and annealed films (64% Al) were 35 GPa and 38 GPa, respectively.

  14. Synthesis of copper nitride films doped with Fe, Co, or Ni by reactive magnetron sputtering

    SciTech Connect

    Yang, Jianbo; Huang, Saijia; Wang, Zhijiao; Hou, Yuxuan; Shi, Yuyu; Zhang, Jian; Yang, Jianping Li, Xing'ao

    2014-09-01

    Copper nitride (Cu{sub 3}N) and Fe-, Co-, and Ni-doped Cu{sub 3}N films were prepared by reactive magnetron sputtering. The films were deposited on silicon substrates at room temperature using pure Cu target and metal chips. The molar ratio of Cu to N atoms in the as-prepared Cu{sub 3}N film was 2.7:1, which is comparable with the stoichiometry ratio 3:1. X-ray diffraction measurements showed that the films were composed of Cu{sub 3}N crystallites with anti-ReO{sub 3} structure and adopted different preferred orientations. The reflectance of the four samples decreased in the wavelength range of 400–830 nm, but increased rapidly within wavelength range of 830–1200 nm. Compared with the Cu{sub 3}N films, the resistivity of the doped Cu{sub 3}N films decreased by three orders of magnitude. These changes have great application potential in optical and electrical devices based on Cu{sub 3}N films.

  15. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    SciTech Connect

    Krylov, P. N. Zakirova, R. M.; Fedotova, I. V.

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  16. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    PubMed

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates.

  17. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-01

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 - 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 - 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  18. Synthesis and characterization of delafossite thin films by reactive RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Asmat Uceda, Martin Antonio

    This work presents a comparative study on optical and electrical properties of CuAlO2 thin films on sapphire (0001) substrates deposited with two different growth conditions using reactive RF-magnetron sputtering technique from metallic Cu and Al targets. CuAlO2 is a very promising material for transparent electronic applications, it is intended that comparison of results obtained from both approaches, could lead to optimization and control of the physical properties of this material, namely its electrical conductivity and optical transmittance. All samples were heat treated at 1100°C using rapid thermal annealing with varying time and rate of cooling. The effect of sputtering conditions and different annealing time on phase formation and evolution is studied with X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that for most of the samples CuAlO2 phase is formed after 60 min of annealing time, but secondary phases were also present that depend on the deposition conditions. However, pure CuAlO2 phase was obtained for annealed CuO on sapphire films with annealing time of 60 min. The optical properties obtained from UV-Visible spectroscopic measurement reveals indirect and direct optical band gaps for CuAlO2 films and were found to be 2.58 and 3.72 eV respectively. The films show a transmittance of about 60% in the visible range. Hall effect measurements indicate p-type conductivity. Van der Pauw technique was used to measure resistivity of the samples. The highest electrical conductivity and charge carrier concentration obtained were of 1.01x10-1S.cm -1 and 3.63 x1018 cm-3 respectively.

  19. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  20. Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5

    NASA Astrophysics Data System (ADS)

    Hollerweger, R.; Holec, D.; Paulitsch, J.; Rachbauer, R.; Polcik, P.; Mayrhofer, P. H.

    2013-08-01

    Reactive magnetron sputtering enables the deposition of various thin films to be used for protective as well as optical and electronic applications. However, progressing target erosion during sputtering results in increased magnetic field strengths at the target surface. Consequently, the glow discharge, the target poisoning, and hence the morphology, crystal structure and stoichiometry of the prepared thin films are influenced. Therefore, these effects were investigated by varying the cathode current Im between 0.50 and 1.00 A, the magnetic field strength B between 45 and 90 mT, and the O2/(Ar + O2) flow rate ratio Γ between 0% and 100%. With increasing oxygen flow ratio a substoichiometric TaOx oxide forms at the metallic Ta target surface which further transfers to a non-conductive tantalum pentoxide Ta2O5, impeding a stable dc glow discharge. These two transition zones (from Ta to TaOx and from TaOx to Ta2O5) shift to higher oxygen flow rates for increasing target currents. In contrast, increasing the magnetic field strength (e.g., due to sputter erosion) mainly shifts the TaOx to Ta2O5 transition to lower oxygen flow rates while marginally influencing the Ta to TaOx transition. To allow for a stable dc glow discharge (and to suppress the formation of non-conductive Ta2O5 at the target) even at Γ = 100% either a high target current (Im ⩾ 1 A) or a low magnetic field strength (B ⩽ 60 mT) is necessary. These conditions are required to prepare stoichiometric and fully crystalline Ta2O5 films.

  1. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    SciTech Connect

    Högberg, Hans Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars; Samuelsson, Mattias

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  2. Microstructure and properties of SiC-coated carbon fibers prepared by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jianrong; Zhou, Shan; Wei, Yongshan

    2016-04-01

    SiC-coated carbon fibers are prepared at room temperature with different radio-frequency magnetron sputtering powers. Results show that the coated carbon fibers have uniform, continuous, and flawless surfaces. The mean strengths of the coated carbon fibers with different sputtering powers are not influenced by other factors. Filament strength of SiC-coated carbon fibers increases by approximately 2% compared with that of uncoated carbon fibers at a sputtering power of <200 W. The filament strengths of the coated fibers increase by 9.3% and 12% at sputtering powers of 250 and 300 W, respectively. However, the mean strength of the SiC-coated carbon fibers decreased by 8% at a sputtering power of 400 W.

  3. Nanoporous Ti-metal film deposition using radio frequency magnetron sputtering technique for photovoltaic application.

    PubMed

    Sung, Youl-Moon; Paeng, Sung-Hwan; Moon, Byung-Ho; Kwak, Dong-Joo

    2012-02-01

    Nanoporous Ti-metal film electrode was fabricated by radio frequency (rf) magnetron sputtering technique on nanoporous TiO2 layer prepared by sol-gel combustion method and investigated with respect to its photo-anode properties of TCO-less DSCs. The porous Ti layer (approximately 1 microm) with low sheet resistance (approximately 17 Omega/sq.) can collect electrons from the TiO2 layer and allows the ionic diffusion of I(-)/I(3-) through the hole. The porous Ti layer with highly ordered columnar structure prepared by 8 mTorr sputtering shows the good impedance characteristics. The efficiency of prepared TCO-less DSCs sample is about 4.83% (ff: 0.6, Voc: 0.65 V, Jsc: 11.2 mA/cm2).

  4. A parametric model for reactive high-power impulse magnetron sputtering of films

    NASA Astrophysics Data System (ADS)

    Kozák, Tomáš; Vlček, Jaroslav

    2016-02-01

    We present a time-dependent parametric model for reactive HiPIMS deposition of films. Specific features of HiPIMS discharges and a possible increase in the density of the reactive gas in front of the reactive gas inlets placed between the target and the substrate are considered in the model. The model makes it possible to calculate the compound fractions in two target layers and in one substrate layer, and the deposition rate of films at fixed partial pressures of the reactive and inert gas. A simplified relation for the deposition rate of films prepared using a reactive HiPIMS is presented. We used the model to simulate controlled reactive HiPIMS depositions of stoichiometric \\text{Zr}{{\\text{O}}2} films, which were recently carried out in our laboratories with two different configurations of the {{\\text{O}}2} inlets in front of the sputtered target. The repetition frequency was 500 Hz at the deposition-averaged target power densities of 5 Wcm-2and 50 Wcm-2 with a pulse-averaged target power density up to 2 kWcm-2. The pulse durations were 50 μs and 200 μs. Our model calculations show that the to-substrate {{\\text{O}}2} inlet provides systematically lower compound fractions in the target surface layer and higher compound fractions in the substrate surface layer, compared with the to-target {{\\text{O}}2} inlet. The low compound fractions in the target surface layer (being approximately 10% at the deposition-averaged target power density of 50 Wcm-2 and the pulse duration of 200 μs) result in high deposition rates of the films produced, which are in agreement with experimental values.

  5. Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta–N films

    NASA Astrophysics Data System (ADS)

    Salamon, K.; Radić, N.; Bogdanović Radović, I.; Očko, M.

    2016-05-01

    Thin films of tantalum nitride (Ta–N) have been prepared by reactive magnetron deposition under various nitrogen partial pressures p{{\\text{N}}2} (0-1) and subsequently annealed (T a   =  450–950 °C). The structure, density, composition and electrical resistivity of the prepared films were systematically investigated. A p{{\\text{N}}2}-{{T}a} phase map was constructed from the results of structural analysis. With increasing of p{{\\text{N}}2} from 0 to 0.2, a single-phase or two-phase mixture films of tetragonal Ta, Ta2N ({{T}a}≥slant 450 °C), ɛ-TaN ({{T}a}≥slant 850 °C), θ-TaN ({{T}a}≥slant 850 °C) and fcc δ-TaN are sequentially observed. For p{{\\text{N}}2}=0.25 –0.45, the as grown and annealed films exhibit δ-TaN structure. Amorphous films grown in the p{{\\text{N}}2}=0.45 –0.75 range crystallize as cubic Ta2N3 upon annealing at {{T}a}≥slant 650 °C or as δ-TaN at {{T}a}≥slant 850 °C. A cubic Ta2N3 is grown at highest p{{\\text{N}}2} (≥slant 0.85), which decomposes to δ-TaN at {{T}a}≥slant 850 °C. The N     / Ta atomic ratio in the film linearly increases for p{{\\text{N}}2}=0 –0.5, ranging from 0 to 2.1, while the mass density monotonically decreases with p{{\\text{N}}2} . Upon annealing, a part of N atoms out-diffuses from the films deposited at p{{\\text{N}}2}≥slant 0.3 . The electrical resistivity strongly depends on both p{{\\text{N}}2} and T a . However, in the as grown and annealed δ-TaN films the resistivity was of the order of 100–1000 μ Ω cm. In these films, a correlation between the resistivity and the average number of defects (Ta vacancies and N atom excess) is observed. Finally, the influence of thermally introduced oxygen on the films resistivity has been revealed.

  6. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  7. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Oezer, D.; Sanjines, R.; Ramirez, G.; Rodil, S. E.

    2012-12-01

    The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and

  8. Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ju, Hongbo; Xu, Junhua

    2015-11-01

    Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al2O3 depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2-13.5 at.%, which showed low average friction coefficient values of 0.46-0.40 and wear rate values of 1.1 × 10-8 to 1.7 × 10-8 mm3/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO3 detected on the surface of the wear tracks could lead to the friction coefficient curve stay constant and decrease the average friction coefficients. The decrease of wear rate was mainly attributed to the lubricant tribo-film AgNbO3 as Ag content increased from 4.0 to 9.2 at.%; with a further increase in Ag content, the wear rate increased with increasing Ag content in NbN-Ag films because a

  9. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    NASA Astrophysics Data System (ADS)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  10. Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jiang, Jinlong; Wang, Yubao; Du, Jinfang; Yang, Hua; Hao, Junying

    2016-08-01

    The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7 at.% to 0.2 at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp3 carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40-60 sccm exhibits the very smooth surface (RMS roughness 0.4 nm), low stress (0.42 GPa), high hardness (21.1 GPa), as well as low friction coefficient (0.038) and wear rate (1.6 × 10-7 mm3/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.

  11. Radio-Frequency Superimposed Direct Current Magnetron Sputtered Ga:ZnO Transparent Conducting Thin Films

    SciTech Connect

    Sigdel, A. K.; Ndione, P. F.; Perkins, J. D.; Gennett, T.; van Hest, M. F. A. M.; Shaheen, S. E.; Ginley, D. S.; Berry, J. J.

    2012-05-01

    The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga{sub 2}O{sub 3} (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 {+-} 200 S/cm, 3920 {+-} 600 S/cm, and 3610 {+-} 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in {chi} and broadening of optical gap with increased carrier concentration via more efficient doping. Independent of the total sputtering power, all films grown with 50% or higher RF power portion resulted in high mobility ({approx}28 {+-} 1 cm{sup 2}/Vs), consistent with observed improvements in crystallographic texture. All films showed optical transmittance of {approx}90% in the visible range.

  12. Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

    SciTech Connect

    Sigdel, Ajaya K.; Shaheen, Sean E.; Ndione, Paul F.; Perkins, John D.; Gennett, Thomas; Hest, Maikel F. A. M. van; Ginley, David S.; Berry, Joseph J.

    2012-05-01

    The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga{sub 2}O{sub 3} (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 {+-} 200 S/cm, 3920 {+-} 600 S/cm, and 3610 {+-} 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in {chi} and broadening of optical gap with increased carrier concentration via more efficient doping. Independent of the total sputtering power, all films grown with 50% or higher RF power portion resulted in high mobility ({approx}28 {+-} 1 cm{sup 2}/Vs), consistent with observed improvements in crystallographic texture. All films showed optical transmittance of {approx}90% in the visible range.

  13. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    NASA Astrophysics Data System (ADS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-08-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [101¯0]ZnO(0002)//[112¯0]Al2O3(0002) coexisted with a small amount of ZnO (101¯1) and ZnO (101¯3) crystals on the Al2O3 (0001) substrate. The ZnO (101¯1) and ZnO (101¯3) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 °C improves the crystalline and the photoluminescence more significantly than annealing in air, N2 and O2 ambient; it also tends to convert the crystal from ZnO (101¯1) and ZnO (101¯3) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects.

  14. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Gong, Haibo; Freudenberg, Norman; Nie, Man; van de Krol, Roel; Ellmer, Klaus

    2016-04-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  15. Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

    SciTech Connect

    Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

    2012-06-25

    Thin films of VO{sub x} (1.3 {<=} x {<=} 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO{sub x} samples. The resistivity of nanotwinned VO{sub x} films ranged from 4 m{Omega}{center_dot}cm to 0.6 {Omega}{center_dot}cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VO{sub x} samples using the Hooge-Vandamme relation. These VO{sub x} films are comparable or surpass commercial VO{sub x} films deposited by ion beam sputtering.

  16. Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Stein, Adrian; Keudell, Achim von; Nahif, Farwah; Schneider, Jochen M.

    2013-09-21

    Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.

  17. Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2011-06-01

    Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.

  18. Investigation of antiperovskite Mn{sub 3}CuN{sub x} film prepared by DC reactive magnetron sputtering

    SciTech Connect

    Sun, Ying; Wang, Cong; Na, Yuanyuan; Chu, Lihua; Wen, Yongchun; Nie, Man

    2010-09-15

    Antiperovskite Mn{sub 3}CuN{sub x} film was prepared by dc reactive magnetron sputtering. It is the first time to report an antiperovskite ternary nitride film. The composition and crystal structure were characterized by energy dispersive spectroscope (EDS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). From the XRD pattern, it displays a (1 0 0) preferential orientation. A comparative study on the properties of Mn{sub 3}CuN{sub x} film and the bulk sample was presented. The film exhibits an antiferromagnetic to paramagnetic transition around 135 K, similar with the bulk sample. With temperature, the resistivity of the film shows semiconductor-like behavior throughout the measured temperature region, whereas there is an abrupt drop around the magnetic transition for the bulk. The variable temperature XRD results indicate that the film did not display any structure transition and shows a normal linear thermal expansion property around the magnetic transition.

  19. Hydrogen release kinetics during reactive magnetron sputter depostion of a-Si:H: An isotope labeling study

    NASA Astrophysics Data System (ADS)

    Abelson, J. R.; Mandrell, L.; Doyle, J. R.

    1994-08-01

    The release of moleculear hydrogen from the growing surface of hydrogenated amorphous silicon films is determined using an isotope labeling technique. The results demonstrate that surface-bonded H atoms are readily abstracted by atomic hydrogen arriving from the gas phase. The films are deposited by dc reactive magnetron sputtering of a silicon target in an argon-hydrogen atmosphere. To achieve isotope labeling, we first deposit a deuterated amorphous silicon film, then commence growth of hydrogenated amorphous silicon and measure the transient release of HD and D2 from the growing surface using mass spectrometry. Release occurs when the supply of reactive hydrogen in the growth flux exceeds the incorporation rate into the film, and is observed under all experimental conditions. The net rate of H incorporation is known from ex situ measurments of film growth and hydrogen content. We combine the H release and incorporation data in a mass balance argument to determine the H-surface kinetics. Under conditions which produce electronically useful films, (1) 0.5-1.0 hydrogen atoms react with the growing surface per incorporated silicon atom, (2) the near surface of the growing film contains 1-3 x 10(exp 15)/sq cm pf excess hydrogen, the dominant hydrogen release mechanism is by direct abstraction to form H2 molecules, and the kinetics of H release and incorportation can be described by constant rate coefficients. These data are supported by studies of H interactions with single-crystal silicon and amorphous carbon surfaces.

  20. Comparison of Y2O3:Bi3+ phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

    NASA Astrophysics Data System (ADS)

    Jafer, R. M.; Yousif, A.; Kumar, Vinod; Pathak, Trilok Kumar; Purohit, L. P.; Swart, H. C.; Coetsee, E.

    2016-09-01

    The reactive radio-frequency (RF) magnetron sputtering and spin coating fabrication techniques were used to fabricate Y2-xO3:Bix=0.5% phosphor thin films. The two techniques were analysed and compared as part of investigations being done on the application of down-conversion materials for a Si solar cell. The morphology, structural and optical properties of these thin films were investigated. The X-ray diffraction results of the thin films fabricated by both techniques showed cubic structures with different space groups. The optical properties showed different results because the Bi3+ ion is very sensitive towards its environment. The luminescence results for the thin film fabricated by the spin coating technique is very similar to the luminescence observed in the powder form. It showed three obvious emission bands in the blue and green regions centered at about 360, 410 and 495 nm. These emissions were related to the 3P1-1S0 transition of the Bi3+ ion situated in the two different sites of the Y2O3 matrix with I a-3(206) space group. Whereas the thin film fabricated by the radio frequency magnetron technique showed a broad single emission band in the blue region centered at about 416 nm. This was assigned to the 3P1-1S0 transition of the Bi3+ ion situated in one of the Y2O3 matrix's sites with a Fm-3 (225) space group. The spin coating fabrication technique is suggested to be the best technique to fabricate the Y2O3:Bi3+ phosphor thin films.

  1. Low temperature deposition of transparent conducting ITO/Au/ITO films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kim, Daeil

    2010-01-01

    Transparent conducting indium tin oxide/Au/indium tin oxide (ITO) multilayered films were deposited on unheated polycarbonate substrates by magnetron sputtering. The thickness of the Au intermediated film varied from 5 to 20 nm. Changes in the microstructure, surface roughness and optoelectrical properties of the ITO/Au/ITO films were investigated with respect to the thickness of the Au intermediated layer. X-ray diffraction measurements of ITO single layer films did not show characteristic diffraction peaks, while ITO/Au/ITO films showed an In 2O 3 (2 2 2) characteristic diffraction peak. The optoelectrical properties of the films were also dependent on the presence and thickness of the Au thin film. The ITO 50 nm/Au 10 nm/ITO 40 nm films had a sheet resistance of 5.6 Ω/□ and an average optical transmittance of 72% in the visible wavelength range of 400-700 nm. Consequently, the crystallinity, which affects the optoelectrical properties of ITO films, can be enhanced with Au intermediated films.

  2. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties

    SciTech Connect

    Borges, Joel Vaz, Filipe; Marques, Luis; Martin, Nicolas

    2014-03-15

    In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtaining different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.

  3. Visible light-induced photocatalytic properties of WO{sub 3} films deposited by dc reactive magnetron sputtering

    SciTech Connect

    Imai, Masahiro; Kikuchi, Maiko; Oka, Nobuto; Shigesato, Yuzo

    2012-05-15

    The authors examined the photocatalytic activity of WO{sub 3} films (thickness 500-600 nm) deposited on a fused quartz substrate heated at 350-800 deg. C by dc reactive magnetron sputtering using a W metal target under the O{sub 2} gas pressure from 1.0 to 5.0 Pa. Films deposited at 800 deg. C under 5.0 Pa have excellent crystallinity of triclinic, P1(1) structure and a large surface area, as confirmed by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Exposure of acetaldehyde (CH{sub 3}CHO) adsorbed onto the film surface to ultraviolet, visible, or standard fluorescence light induces oxidative photocatalytic decomposition indicated by a decrease in CH{sub 3}CHO concentration and generation of CO{sub 2} gas. For all three types of irradiation, concentration ratio of decreased CH{sub 3}CHO to increased CO{sub 2} is about 1:1, suggesting the possible presence of intermediates. The sputter-deposited WO{sub 3} film can be a good candidate as a visible light-responsive photocatalyst.

  4. Proton conductive tantalum oxide thin film deposited by reactive DC magnetron sputtering for all-solid-state switchable mirror

    NASA Astrophysics Data System (ADS)

    Tajima, K.; Yamada, Y.; Bao, S.; Okada, M.; Yoshimura, K.

    2008-03-01

    Our developed all-solid-state switchable mirror as a smart window is consisted in multi-layer of Mg4Ni/Pd/Ta2O5/WO3/ITO/glass and can switch reversibly from the reflective state to the transparent one. The development of high performance solid electrolyte thin film of Ta2O5 is important for fast speed switching and high durability of the device. In this work, we have investigated the electrochemical property of Ta2O5 thin film deposited by reactive DC magnetron sputtering. The effect of thickness on electrochemical and proton conductivities of Ta2O5 thin film was investigated. The Ta2O5 thin film with a thickness of 400 nm had better proton conductivity of 1.5×10-9 S/cm measured by AC impedance method. The transmittance at wavelength of 670 nm of the device with 400 nm thick Ta2O5 thin film was changed from 0.1% (reflective state) to 51% (transparent state) within 10 s by applying voltage of 5 V. The device showed high durability up to two-thousand switching cycles.

  5. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  6. Reactive dc magnetron sputtering of (GeO{sub x}-SiO{sub 2}) superlattices for Ge nanocrystal formation

    SciTech Connect

    Zschintzsch, M.; Jeutter, N. M.; Borany, J. von; Krause, M.; Muecklich, A.

    2010-02-15

    The motivation of this work is the tailored growth of Ge nanocrystals for photovoltaic applications. The use of superlattices provides a reliable method to control the Ge nanocrystal size after phase separation. In this paper, we report on the deposition of (GeO{sub x}-SiO{sub 2}) superlattices via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation during subsequent annealing. Attention is directed mainly to define proper deposition conditions for tuning the GeO{sub x} composition between elemental Ge (x=0) and GeO{sub 2} (x=2) by the variation in the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows sequential GeO{sub x}-SiO{sub 2} deposition without changing the oxygen partial pressure during deposition. The phase separation and Ge nanocrystal formation after subsequent annealing were investigated with in situ x-ray scattering, Raman spectroscopy, and electron microscopy. By these methods the existence of 2-5 nm Ge nanocrystals at annealing temperatures of 600-750 deg. C has been confirmed which is within the superlattice stability range. The technique used allows the fabrication of superlattice stacks with very smooth interfaces (roughness<1 nm); thus the Ge nanocrystal layers could be separated by very thin SiO{sub 2} films (d<3 nm) which offers interesting possibilities for charge transport via direct tunneling.

  7. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  8. The effect of alumina and aluminium nitride coating by reactive magnetron sputtering on the resin bond strength to zirconia core

    PubMed Central

    Külünk, Şafak; Baba, Seniha; Öztürk, Özgür; Danişman, Şengül; Savaş, Soner

    2013-01-01

    PURPOSE Although several surface treatments have been recently investigated both under in vitro and in vivo conditions, controversy still exists regarding the selection of the most appropriate zirconia surface pre-treatment. The purpose of this study was to evaluate the effect of alumina (Al) and aluminium nitride (AlN) coating on the shear bond strength of adhesive resin cement to zirconia core. MATERIALS AND METHODS Fifty zirconia core discs were divided into 5 groups; air particle abrasion with 50 µm aluminum oxide particles (Al2O3), polishing + Al coating, polishing + AlN coating, air particle abrasion with 50 µm Al2O3 + Al coating and air particle abrasion with 50 µm Al2O3 + AlN coating. Composite resin discs were cemented to each of specimens. Shear bond strength (MPa) was measured using a universal testing machine. The effects of the surface preparations on each specimen were examined with scanning electron microscope (SEM). Data were statistically analyzed by one-way ANOVA (α=.05). RESULTS The highest bond strengths were obtained by air abrasion with 50 µm Al2O3, the lowest bond strengths were obtained in polishing + Al coating group (P<.05). CONCLUSION Al and AlN coatings using the reactive magnetron sputtering technique were found to be ineffective to increase the bond strength of adhesive resin cement to zirconia core. PMID:24353874

  9. Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Murphy, Neil R.; Gallagher, Regina C.; Sun, Lirong; Jones, John G.; Grant, John T.

    2015-07-01

    Mixed-valent rhenium oxide thin films were deposited using reactive magnetron sputtering employing a metallic rhenium target within an oxygen-argon environment. The oxygen and argon flow rates were systematically varied, while the extinction coefficient, k, of the deposited layers was monitored using in situ spectroscopic ellipsometry. In situ monitoring was used to identify absorption features specific to ReO3, namely, the minimization of k brought on by the gap between interband absorption features in the UV at 310 nm and the onset of free electron absorption at wavelengths above 540 nm. Based on these results, oxygen flow ratios of 50% and 60% were shown to produce films having optical properties characteristic of ReO3, and thus, were selected for detailed ex situ characterization. Chemical analysis via X-ray photoelectron spectroscopy confirmed that all films consisted largely of ReO3, but had some contributions from Re2O3, ReO2 and Re2O7. Additional monitoring of the chemistry, as a function of environmental exposure time, indicated a correlation between structural instability and the presence of Re2O3 and Re2O7 in the films.

  10. Effect of thermal annealing on structural, optical and electrical properties of RF reactive magnetron sputtered CdO thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Gadipelly Anil; Ramana Reddy, Musugu; Narasimha Reddy, Katta

    2014-10-01

    Recently, there has been a lot of interest on transparent conducting oxide (TCO) materials which have common application in solar cells and some optoelectronic devices. In this work, cadmium oxide (CdO) thin films have been deposited on glass substrates by RF reactive magnetron sputtering technique and subsequently annealed in air from 200 °C to 500 °C. The effect of annealing temperature on the structural, morphological, optical and electrical properties of CdO films is systematically investigated by X-ray diffraction, scanning electron microscopy with energy dispersive spectroscopy, atomic force microscopy, UV-visible spectrophotometer and Hall effect measurements. X-ray diffraction (XRD) studies showed that the films are polycrystalline in nature with a preferential orientation along (2 0 0) plane. Atomic force microscopy studies showed that these films are very smooth with maximum root mean square roughness of 3.13 nm. The CdO films formed at annealing temperature of 400 °C exhibited optical transmittance of 84%, electrical resistivity of 1.9 × 10-3 Ω cm and figure of merit of 1.8 × 10-3 Ω-1.

  11. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  12. Effects of Ti addiction in WO 3 thin film ammonia gas sensor prepared by dc reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hu, Ming; Yong, Cholyun; Feng, Youcai; Lv, Yuqiang; Han, Lei; Liang, Jiran; Wang, Haopeng

    2006-11-01

    WO 3 sensing films (1500 Å) were deposited using dc reactive magnetron sputtering method on alumina substrate on which patterned interdigital Pt electrodes were previously formed. The additive Ti was sputtered with different thickness (100-500 Å) onto WO 3 thin films and then the films as-deposited were annealed at 400°C in air for 3h. The crystal structure and chemical composition of the films were characterized by XRD and XPS analysis. The effect of Ti addition on sensitive properties of WO 3 thin film to the NH 3 gas was then discussed. WO 3 thin films added Ti revealed excellent sensitivity and response characteristics in the presence of low concentration of NH 3 (5-400 ppm) gas in air at 200°C operating temperature. Especially,in case 300 Å thickness of additive Ti, WO 3 thin films have a promotional effect on the response speed to NH 3 and selectivity enhanced with respect to other gases (CO, C IIH 5OH, CH 4). The influence of different substrates, including alumina, silicon and glass, on sensitivity to NH 3 gas has also been investigated.

  13. Degradation and Characterization of Resorbable Phosphate-Based Glass Thin-Film Coatings Applied by Radio-Frequency Magnetron Sputtering.

    PubMed

    Stuart, Bryan W; Gimeno-Fabra, Miquel; Segal, Joel; Ahmed, Ifty; Grant, David M

    2015-12-16

    Quinternary phosphate-based glasses of up to 2.67 μm, deposited by radio-frequency magnetron sputtering, were degraded in distilled water and phosphate-buffered saline (PBS) to investigate their degradation characteristics. Magnetron-sputtered coatings have been structurally compared to their compositionally equivalent melt-quenched bulk glass counterparts. The coatings were found to have structurally variable surfaces to melt-quenched glass such that the respective bridging oxygen to nonbridging oxygen bonds were 34.2% to 65.8% versus 20.5% to 79.5%, forming metaphosphate (PO3)(-) (Q(2)) versus less soluble (P2O7)(4-) (Q(1)) and (PO4)(3-) (Q(0)), respectively. This factor led to highly soluble coatings, exhibiting a t(1/2) degradation dependence in the first 2 h in distilled water, followed by a more characteristic linear profile because the subsequent layers were less soluble. Degradation was observed to preferentially occur, forming voids characteristic of pitting corrosion, which was confirmed by the use of a focused ion beam. Coating degradation in PBS precipitated a (PO3)(-) metaphosphate, an X-ray amorphous layer, which remained adherent to the substrate and seemingly formed a protective diffusion barrier, which inhibited further coating degradation. The implications are that while compositionally similar, sputter-deposited coatings and melt-quenched glasses are structurally dissimilar, most notably, with regard to the surface layer. This factor has been attributed to surface etching of the as-deposited coating layer during deposition and variation in the thermal history between the processes of magnetron sputtering and melt quenching.

  14. Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

    SciTech Connect

    Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Drawl, William R.; Allara, David L.; Ashok, S.; Horn, Mark W.; Bharadwaja, S. S. N.

    2011-11-15

    Cathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was investigated to correlate the structural and electrical properties of the resultant vanadium oxide thin films within the framework of Berg's model [Berg et al., J. Vac. Sci. Technol. A 5, 202 (1987)]. The process hysteresis during reactive pulsed dc sputtering of a vanadium metal target was monitored by measuring the cathode (target) current under different total gas flow rates and oxygen-to-argon ratios for a power density of {approx}6.6.W/cm{sup 2}. Approximately 20%-25% hysteretic change in the cathode current was noticed between the metallic and oxidized states of the V-metal target. The extent of the hysteresis varied with changes in the mass flow of oxygen as predicted by Berg's model. The corresponding microstructure of the films changed from columnar to equiaxed grain structure with increased oxygen flow rates. Micro-Raman spectroscopy indicates subtle changes in the film structure as a function of processing conditions. The resistivity, temperature coefficient of resistance, and charge transport mechanism, obeying the Meyer-Neldel relation [Meyer and Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)], were correlated with the cathode current hysteric behavior.

  15. Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates

    SciTech Connect

    Burmistrova, Polina V.; Rui Koh, Yee; Lundstrom, Mark S.; Maassen, Jesse; Salamat, Shuaib; Favaloro, Tela; Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

    2013-04-21

    Epitaxial ScN(001) thin films were grown on MgO(001) substrates by dc reactive magnetron sputtering. The deposition was performed in an Ar/N{sub 2} atmosphere at 2 Multiplication-Sign 10{sup -3} Torr at a substrate temperature of 850 Degree-Sign C in a high vacuum chamber with a base pressure of 10{sup -8} Torr. In spite of oxygen contamination of 1.6 {+-} 1 at. %, the electrical resistivity, electron mobility, and carrier concentration obtained from a typical film grown under these conditions by room temperature Hall measurements are 0.22 m{Omega} cm, 106 cm{sup 2} V{sup -1} s{sup -1}, and 2.5 Multiplication-Sign 10{sup 20} cm{sup -3}, respectively. These films exhibit remarkable thermoelectric power factors of 3.3-3.5 Multiplication-Sign 10{sup -3} W/mK{sup 2} in the temperature range of 600 K to 840 K. The cross-plane thermal conductivity is 8.3 W/mK at 800 K yielding an estimated ZT of 0.3. Theoretical modeling of the thermoelectric properties of ScN calculated using a mean-free-path of 23 nm at 300 K is in very good agreement with the experiment. These results also demonstrate that further optimization of the power factor of ScN is possible. First-principles density functional theory combined with the site occupancy disorder technique was used to investigate the effect of oxygen contamination on the electronic structure and thermoelectric properties of ScN. The computational results suggest that oxygen atoms in ScN mix uniformly on the N site forming a homogeneous solid solution alloy. Behaving as an n-type donor, oxygen causes a shift of the Fermi level in ScN into the conduction band without altering the band structure and the density of states.

  16. Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

    SciTech Connect

    Kuschel, Thomas; Keudell, Achim von

    2010-05-15

    Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with this microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.

  17. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    SciTech Connect

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P.

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  18. Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

    PubMed Central

    2013-01-01

    The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation. PMID:23799923

  19. Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Peng, Yunfei; Wang, Hailong; Zhang, Wenqi; Li, Bin; Zhou, Dongzhan; Zhang, Xiqing; Wang, Yongsheng

    2016-07-01

    The fabrication and electrical characterization of InZnO:N thin film transistors (TFTs) were investigated in this work. The InZnO:N film was deposited on SiO2/ p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature. In order to optimize the performance of the InZnO:N TFTs, the effect of the oxygen contents in the preparation of the active layer is investigated. We found that an appropriate O2/Ar gas flow ratio is very beneficial for the InZnO:N TFTs, and when the O2/Ar gas flow ratio is at 1/30, the transistor exhibited a high field-effect mobility of 39.3 cm2/Vs, a threshold voltage of 2.4 V and a I ON/OFF ratio of 1.1 × 107.

  20. Bandgap widening in highly conducting CdO thin film by Ti incorporation through radio frequency magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Saha, B.; Thapa, R.; Chattopadhyay, K. K.

    2008-01-01

    Transparent and highly conducting thin films of cadmium oxide (CdO) with titanium doping were synthesized by using radio frequency magnetron sputtering technique. The thin films were deposited on glass and silicon substrates with different percentages of titanium at a fixed substrate temperature 473 K and a fixed pressure of 0.1 mbar in Ar atmosphere. The deposited films were characterized by studying their crystallographic structure, optical and electrical properties. X-ray diffractometer, atomic force microscope, UV-Vis-NIR spectrophotometer, and X-ray photoelectron spectrophotometer were used for different characterizations. All the films have a rock-salt structure. A systematic increase in the optical bandgap was found for the CdO thin films with Ti doping, so that it can be considered as a candidate material for different optoelectronic device applications. Electrical conductivity was also found to increase with Ti doping concentration.

  1. Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering.

    PubMed

    Jian, Sheng-Rui; Chang, Huang-Wei; Tseng, Yu-Chin; Chen, Ping-Han; Juang, Jenh-Yih

    2013-01-01

    The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall-Petch equation. PMID:23799923

  2. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Subramanian, N. Sankara; Loganathan, S.; Kannan, R.

    2014-04-01

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  3. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  4. Highly oriented {delta}-Bi{sub 2}O{sub 3} thin films stable at room temperature synthesized by reactive magnetron sputtering

    SciTech Connect

    Lunca Popa, P.; Kerdsongpanya, S.; Lu, J.; Eklund, P.; Sonderby, S.; Bonanos, N.

    2013-01-28

    We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of {delta}-Bi{sub 2}O{sub 3}. This phase is obtained at a substrate temperature of 150-200 Degree-Sign C in a narrow window of O{sub 2}/Ar ratio in the sputtering gas (18%-20%). Transmission electron microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 Degree-Sign C in vacuum and 350 Degree-Sign C in ambient air.

  5. Particle modelling of low-pressure radio-frequency magnetron discharges including the effects of self-induced electromagnetic fields

    NASA Astrophysics Data System (ADS)

    Benyoucef, D.; Yousfi, M.

    2014-08-01

    Modelling of radio-frequency (RF) magnetron discharges is performed using a particle-in-cell/Monte Carlo technique in the case of low-pressure argon gas at 4 mTorr and high external magnetic field in order to self-maintain the discharge and to generate an energetic quasi-ion beam required for cathode sputtering applications. An emphasis is made, for the first time in the literature in the case of low-pressure RF discharges, on the development of a particle model coupled with the full set of electromagnetic field equations. The aim is to analyse the effect on the RF plasma features of the plasma-induced magnetic field resulting from the coupling of the Maxwell-Ampere equation. We also analysed the effect of the electric field due to the time variation of magnetic field resulting from the coupling of the Maxwell-Faraday equation. For the present asymmetrical plasma reactor, the mean relative difference on, for instance, the ion density with and without the consideration of plasma-induced magnetic and electric fields due to the time variation of the magnetic field can reach about 2.5% in the region of the plasma bulk and about 10% in the lateral sheath. The effects of these two induced electromagnetic fields are in fact higher in the regions where the radial magnetic field generated by the external magnets belonging to the magnetron configuration is low. These non-negligible relative differences clearly show the importance of rigorously taking into account, beyond the usual Poisson's equation for the space charge electric field, the full set of electromagnetic Maxwell equations for a more accurate modelling of these low-pressure discharges, particularly when the total current density reaches a few mA cm-2.

  6. Combined optical emission and resonant absorption diagnostics of an Ar-O2-Ce-reactive magnetron sputtering discharge

    NASA Astrophysics Data System (ADS)

    El Mel, A. A.; Ershov, S.; Britun, N.; Ricard, A.; Konstantinidis, S.; Snyders, R.

    2015-01-01

    We report the results on combined optical characterization of Ar-O2-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O2 content, etc. The absolute number density of the Arm is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Arm by O2 molecules at different oxygen contents. Quantitatively, the absolute number density of Arm is found to be equal to ≈ 3 × 108 cm- 3 in the metallic, and ≈ 5 × 107 cm- 3 in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime.

  7. Substrate temperature dependent surface morphology and photoluminescence of germanium quantum dots grown by radio frequency magnetron sputtering.

    PubMed

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, Sib Krishna; Dousti, Mohammad Reza; Kadir, Mohammed Rafiq Abdul

    2012-10-09

    The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeO(x) manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices.

  8. Compositional, morphological and mechanical investigations of monolayer type coatings obtained by standard and reactive magnetron sputtering from Ti, TiB2 and WC

    NASA Astrophysics Data System (ADS)

    Jinga, V.; Mateescu, A. O.; Cristea, D.; Mateescu, G.; Burducea, I.; Ionescu, C.; Crăciun, L. S.; Ghiuţă, I.; Samoilă, C.; Ursuţiu, D.; Munteanu, D.

    2015-12-01

    The purpose of this work was to study new composite coatings that would have wear resistant properties. The coatings were obtained by standard and reactive simultaneous magnetron sputtering from three targets (Ti, TiB2, WC) with or without N2 as reactive gas. The chemical composition of the coatings was investigated by Rutherford backscattering spectrometry, while the morphological features were evaluated by atomic force microscopy. Some of the mechanical properties of the coatings, such as hardness and Young's modulus, were investigated by nanoindentation, while the adherence to the substrate was investigated by scratch tests. The wear resistance and friction coefficients were evaluated using a pin-on-disk tribometer. The films are hard (Hit between 20 and 22 GPa) and show promising results concerning their wear resistance, especially if the films would be paired with an appropriate substrate material.

  9. Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, J.; Shi, X. J.; Zhu, J.

    2013-01-01

    The low-temperature growth of InxGa1-xN films on quartz glass substrates utilizing radio-frequency magnetron sputtering is investigated. In the InxGa1-xN films prepared using an In-Ga alloy target, grazing incidence X-ray diffraction (GIXRD) peaks corresponding to wurtzite structure were observed. X-ray photoelectron spectroscopy (XPS) was applied to study the extent of oxygen contamination and chemical states, and secondary ion mass spectrometry (SIMS) was used to evaluate the distribution profiles of oxygen impurity in the as-grown InxGa1-xN thin films. XPS and SIMS analysis indicate that the entire thin films have oxide phases. However, no evidence of In2O3, Ga2O3, or indium oxynitride phases was shown in XRD studies. It may be predicted that the oxygen impurities formed amorphous oxide phases embedded in InxGa1-xN matrix. According to our findings, indium is a major phase in the InxGa1-xN thin films which suggests that a significant amount of indium remains un-reacted with N2. The optical transmittance spectra of the as-grown films show interference fringe patterns. The indium fraction x of the as-deposited InxGa1-xN thin films can be calculated out by the transmittance data.

  10. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

    PubMed

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-12-03

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

  11. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

    PubMed

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance. PMID:26631493

  12. Structure and magnetic properties of hcp and fcc nanocrystalline thin Ni films and nanoparticles produced by radio frequency magnetron sputtering.

    PubMed

    Kapaklis, Vassilios; Pappas, Spiridon D; Poulopoulos, Panagiotis; Trachylis, Dimitrios; Schweiss, Peter; Politis, Constantin

    2010-09-01

    We report on the growth of thin Ni films by radio frequency magnetron sputtering in Ar-plasma. The growth temperature was about 350 K and the films were deposited on various substrates such as glass, silicon, sapphire and alumina. The thickness of the thinnest films was estimated by the appearance of Kiessig fringes up to about 2theta = 8 degrees in the small-angle X-ray diffraction pattern, as expected for high-quality atomically-flat thin films. With the help of this, a quartz balance system was calibrated and used for measuring the thickness of thicker samples with an accuracy of better than 5%. Structural characterization via X-ray diffraction and high resolution transmission electron microscopy revealed an Ar-gas pressure window, where single phase hcp Ni films may be grown. The magnetic response of the Ni films was checked at room temperature via a newly established and fully automatic polar magneto-optic Kerr effect magnetometer. The hcp films show no magnetic response. Interestingly, the magnetic saturation field of fcc films deposited at low Ar pressure is comparable to the one of bulk Ni, while the one of fcc films deposited at high Ar pressures is decreased, revealing the presence of residual strain in the films. Finally, it is shown that it is possible to form films which contain magnetic Ni fcc nanoparticles in a non-magnetic hcp matrix, i.e., a system interesting for technological applications demanding a single Ni target for its production.

  13. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    PubMed Central

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation & immersion (E & I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm2) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance. PMID:26631493

  14. Optimization of Ta2O5 optical thin film deposited by radio frequency magnetron sputtering.

    PubMed

    Shakoury, R; Willey, Ronald R

    2016-07-10

    Radio frequency magnetron sputtering has been used here to find the parameters at which to deposit Ta2O5 optical thin films with negligible absorption in the visible spectrum. The design of experiment methodology was employed to minimize the number of experiments needed to find the optimal results. Two independent approaches were used to determine the index of refraction n and k values.

  15. Growth of fullerene-like carbon nitride thin solid films by reactive magnetron sputtering; role of low-energy ion irradiation in determining microstructure and mechanical properties

    NASA Astrophysics Data System (ADS)

    Neidhardt, J.; Czigány, Zs.; Brunell, I. F.; Hultman, L.

    2003-03-01

    Fullerene-like (FL) carbon nitride (CNx) films were deposited on Si (100) substrates by dc reactive, unbalanced, magnetron sputtering in a N2/Ar mixture from a high-purity pyrolythic graphite cathode in a dual-magnetron system with coupled magnetic fields. The N2 fraction in the discharge gas (0%-100%) and substrate bias (-25 V; -40 V) was varied, while the total pressure (0.4 Pa) and substrate temperature (450 °C) was kept constant. The coupled configuration of the magnetrons resulted in a reduced ion flux density, leading to a much lower average energy per incorporated particle, due to a less focused plasma as compared to a single magnetron. This enabled the evolution of a pronounced FL microstructure. The nitrogen concentration in the films saturated rapidly at 14-18 at. %, as determined by elastic recoil analysis, with a minor dependence on the discharge conditions. No correlations were detected between the photoelectron N1s core level spectra and the different microstructures, as observed by high-resolution electron microscopy. A variety of distinct FL structures were obtained, ranging from structures with elongated and aligned nitrogen-containing graphitic sheets to disordered structures, however, not exclusively linked to the total N concentration in the films. The microstructure evolution has rather to be seen as in equilibrium between the two competing processes of adsorption and desorption of nitrogen-containing species at the substrate. This balance is shifted by the energy and number of arriving species as well as by the substrate temperature. The most exceptional structure, for lower N2 fractions, consists of well-aligned, multi-layered circular features (nano-onions) with an inner diameter of approximately 0.7 nm and successive shells at a distance of ˜0.35 nm up to a diameter of 5 nm. It is shown that the intrinsic stress formation is closely linked with the evolution and accommodation of the heavily bent fullerene-like sheets. The FL CNx

  16. Effect of nitrogen flow ratios on the structure and mechanical properties of (TiVCrZrY)N coatings prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tsai, Du-Cheng; Huang, Yen-Lin; Lin, Sheng-Ru; Liang, Shih-Chang; Shieu, Fuh-Sheng

    2010-12-01

    This study reports the influence of growth conditions on the characteristics of (TiVCrZrY)N coatings prepared by reactive magnetron sputtering at various N 2-to-total (N 2 + Ar) flow ratio, which is R N. The crystal structures, microstructure, and mechanical properties for different R N were characterized by electron spectroscopy for chemical analysis, X-ray diffraction, atomic force microscopy, field-emission-scanning electron microscopy, transmission electron microscopy, and nanoindentation. The results indicate that the TiVCrZrY alloy and nitride coatings have hexagonal close-packed (hcp)-type and sodium chloride (NaCl)-type solid-solution structures, respectively. The voids in the coatings are eliminated and the growth of the columnar crystal structures is inhibited along with an increasing R N. As a consequence, highly packed equiaxed amorphous structures with smooth surfaces are formed. The coatings accordingly achieved a pronounce hardness of 17.5 GPa when R N = 100%.

  17. Comparative study of RF reactive magnetron sputtering and sol-gel deposition of UV induced superhydrophilic TiOx thin films

    NASA Astrophysics Data System (ADS)

    Vrakatseli, V. E.; Amanatides, E.; Mataras, D.

    2016-03-01

    TiOx and TiOx-like thin films were deposited on PEEK (Polyether ether ketone) substrates by low-temperature RF reactive magnetron sputtering and the sol-gel method. The resulting films were compared in terms of their properties and photoinduced hydrophilicity. Both techniques resulted in uniform films with good adhesion that can be switched to superhydrophilic after exposure to UVA radiation for similar time periods. In addition, the sputtered films can also be activated and switched to superhydrophilic by natural sunlight due to the higher absorption in the visible spectrum compared to the sol-gel films. On the other hand, the as deposited sol-films remain relatively hydrophilic for a longer time in dark compared to the sputtered film due to the differences in the morphology and the porosity of the two materials. Thus, depending on the application, either method can be used in order to achieve the desirable TiOx properties.

  18. Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Tungasmita, S.; Birch, J.; Persson, P. O. A.˚.; Järrendahl, K.; Hultman, L.

    2000-01-01

    Epitaxial AlN thin films have been grown on 6H-SiC substrates by ultra-high-vacuum (UHV) ion-assisted reactive dc magnetron sputtering. The low-energy ion-assisted growth (Ei=17-27 eV) results in an increasing surface mobility, promoting domain-boundary annihilation and epitaxial growth. Domain widths increased from 42 to 135 nm and strained-layer epitaxy was observed in this energy range. For Ei>52 eV, an amorphous interfacial layer of AlN was formed on the SiC, which inhibited epitaxial growth. Using UHV condition and very pure nitrogen sputtering gas yielded reduced impurity levels in the films (O: 3.5×1018cm-3). Analysis techniques used in this study are in situ reflection high-energy electron diffraction, secondary-ion-mass spectroscopy, atomic-force microscopy, x-ray diffraction, and cross-section high-resolution electron microscopy.

  19. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  20. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO3 films grown by pulsed direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.

    2014-03-01

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO3) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO2:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO3 films deposited on SnO2:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO3 film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10-3. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (Eo) of WO3 films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The Eo is change between 6.30 and 3.88 eV, while the Ed varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm-1 attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  1. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

    SciTech Connect

    Tsai, T. K.; Chen, H. C.; Lee, J. H.; Huang, Y. Y.; Fang, J. S.

    2010-05-15

    Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.

  2. Influence of substrate bias voltage on structural and optical properties of RF reactive magnetron sputtered WO3 thin films

    NASA Astrophysics Data System (ADS)

    Madhavi, V.; Kondaiah, P.; Uthanna, S.

    2012-11-01

    In this investigation, tungsten oxide (WO3) thin films have been deposited on unheated glass substrates by RF magnetron sputtering of tungsten target at constant oxygen partial pressure of 6×10-2 Pa, sputtering power of 150 W and at different substrate bias voltages in the range from 0 to -150 V. The structural and optical properties of the films were investigated by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis-NIR spectrophotometers. The films formed up to substrate bias voltage of -50 V were found to be amorphous in nature, while those films formed at -100 V showed a weak (200) reflection indicates the presence of monoclinic phase of WO3 in amorphous matrix. The optical transmittance of the films was in the range 78 - 95 % in the wavelength range of 500 - 1200 nm. The absorption band edge was shifted towards higher wavelength side with increasing substrate bias voltage. The optical band gap of the films decrease from 2.81 to 2.69 eV with increase of substrate bias voltage from 0 to -150 V respectively. The refractive index of the films increased from 2.19 to 2.27 with increase of substrate bias voltage from 0 to -150 V respectively.

  3. Energy fluxes in a radio-frequency magnetron discharge for the deposition of superhard cubic boron nitride coatings

    SciTech Connect

    Bornholdt, S.; Kersten, H.; Ye, J.; Ulrich, S.

    2012-12-15

    Energy flux measurements by a calorimetric probe in a rf-magnetron plasma used for the deposition of super-hard c-BN coatings are presented and discussed. Argon as working gas is used for sputtering a h-BN target. Adding a certain amount of N{sub 2} is essential for the formation of stoichiometric BN films, since a lack of nitrogen will lead to boron rich films. Subsequently, the contributions of different plasma species, surface reactions, and film growth to the resulting variation of the substrate temperature in dependence on nitrogen admixture are estimated and discussed. In addition, SRIM simulations are performed to estimate the energy influx by sputtered neutral atoms. The influence of magnetron target power and oxygen admixture (for comparison with nitrogen) to the process gas on the total energy flux is determined and discussed qualitatively, too. The results indicate that variation of the energy influx due to additional nitrogen flow, which causes a decrease of electron and ion densities, electron temperature and plasma potential, is negligible, while the admixture of oxygen leads to a drastic increase of the energy influx. The typical hysteresis effect which can be observed during magnetron sputtering in oxygen containing gas mixtures has also been confirmed in the energy influx measurements for the investigated system. However, the underlying mechanism is not understood yet, and will be addressed in further investigations.

  4. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  5. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  6. Influence of working gas pressure on structure and properties of WO3 films reactively deposited by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takahashi, T.; Tanabe, J.; Yamada, N.; Nakabayashi, H.

    2003-07-01

    Tungsten trioxide (WO3) films with thickness of 0.9-6.7 μm have been deposited on glass-slide substrates, using rf magnetron sputtering in an atmosphere of mixture 80% Ar and 20% O2. The as-deposited films had a dark metallic color, like the W target, at a working gas pressure PW of 1 mTorr. Yellow films resulted at a PW of 3 mTorr. With a further increase of PW, the film color changed to pale yellow. From the x-ray diffraction patterns, the as-deposited films were polycrystalline crystallizing in the monoclinic crystal structure with high c-axis orientation perpendicular to the film plane. The optical transmittance of the films deposited at a PW of 1 mTorr is nearly zero. However, the transmittance of the films deposited at other PW are larger than 70% in the wavelength, λ, ranging from 500 to 900 nm. With decreasing λ to 400 nm, the transmittance decreases steeply to zero. The λ at this absorption edge is longer than that in TiO2 and comes in the visible region. The surface morphology of the films depends on PW. This different morphology may be attributed to the effect of the substrate heating by plasma emission because of the high plasma density at higher PW. The morphology of the films may also depend on the crystallinity of the WO3 films. As PW increased, the surfaces of the films became rougher but the grain sizes of the films did not always become larger. The WO3 films deposited in this study may be used for the underlayer of TiO2 photocatalyst.

  7. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Muthu Karuppasamy, K.; Subrahmanyam, A.

    2008-02-01

    In this investigation, vanadium doped tungsten oxide (V : WO3) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm2 C-1), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO3 thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO3 lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO3 with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO3 thin films show good promise in the low maintenance window application.

  8. Transmission photocathodes based on stainless steel mesh and quartz glass coated with N-doped DLC thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Arbet, J.

    2016-03-01

    The influence was investigated of N-doped diamond-like carbon (DLC) films properties on the quantum efficiency of a prepared transmission photocathode. N-doped DLC thin films were deposited on a silicon substrate, a stainless steel mesh and quartz glass (coated with 5 nm thick Cr adhesion film) by reactive magnetron sputtering using a carbon target and gas mixture Ar, 90%N2+10%H2. The elements' concentration in the films was determined by RBS and ERD. The quantum efficiency was calculated from the measured laser energy and the measured cathode charge. For the study of the vectorial photoelectric effect, the quartz type photocathode was irradiated by intensive laser pulses to form pin-holes in the DLC film. The quantum efficiency (QE), calculated at a laser energy of 0.4 mJ, rose as the nitrogen concentration in the DLC films was increased and rose dramatically after the micron-size perforation in the quartz type photocathodes.

  9. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  10. Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2016-04-01

    Diamond-like carbon films were prepared using a reactive Ar/CH4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp3/(C-C sp2 + C-C sp3) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.

  11. Structure Evolution and Electric Properties of TaN Films Deposited on Al2O3-BASED Ceramic and Glass Substrates by Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Yan Ming; Ma, Yang Zhao; Xie, Zhong; He, Ming Zhi

    2014-03-01

    Structure evolution and electric properties of tantalum nitride (TaN) films deposited on Al2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N2-to-Ar flow ratio. The TaN thin films on Al2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta2N grains to TaN, and exhibits high defect density, sheet resistance and negative TCR as the N2-to-Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta2N grains to TaN and Ta3N5 phases with the increase of N2-to-Ar flow ratio. These results indicate that the N2-to-Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al2O3-based ceramic and the samples on glass substrates.

  12. Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VO{sub x} microbolometer thin films

    SciTech Connect

    Jin, Yao O. Ozcelik, Adem; Horn, Mark W.; Jackson, Thomas N.

    2014-11-01

    Vanadium oxide (VO{sub x}) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VO{sub x} film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO{sub x} in the resistivity range of 0.1–10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

  13. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

    SciTech Connect

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.

    2014-03-21

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  14. Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

    SciTech Connect

    Song, Ning E-mail: n.song@student.unsw.edu.au; Huang, Yidan; Li, Wei; Huang, Shujuan; Hao, Xiaojing E-mail: n.song@student.unsw.edu.au; Wang, Yu; Hu, Yicong

    2014-03-03

    The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

  15. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    PubMed

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.

  16. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

    SciTech Connect

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L.

    1999-07-01

    We have induced recrystallization of small grain CdTe thin films deposited at low temperatures by close-spaced sublimation (CSS), using a standard CdCl{sub 2} annealing treatment. We also studied the changes in the physical properties of CdTe films deposited by radio-frequency magnetron sputtering after the same post-deposition processing. We demonstrated that the effects of CdCl{sub 2} on the physical properties of CdTe films are similar, and independent of the deposition method. The recrystallization process is linked directly to the grain size and stress in the films. These studies indicated the feasibility of using lower-temperature processes in fabricating efficient CSS CdTe solar cells. We believe that, after the optimization of the parameters of the chemical treatment, these films can attain a quality similar to CSS films grown using current standard conditions. {copyright} {ital 1999 American Vacuum Society.}

  17. Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

    SciTech Connect

    Nie, Man Ellmer, Klaus

    2014-02-28

    Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). All 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.

  18. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition

    SciTech Connect

    Gall, D.; Petrov, I.; Desjardins, P.; Greene, J.E.

    1999-11-01

    ScN layers, 60{endash}80 nm thick, were grown at 800&hthinsp;{degree}C on 220-nm-thick epitaxial TiN(001) buffer layers on MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges. The films are stoichiometric with N/Sc ratios, determined by Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy, of 1.00{plus_minus}0.02. Plan-view and cross-sectional transmission electron microscopy analyses showed that the films are single crystals which appear defect free up to a critical thickness of {approx_equal}15 nm, above which an array of nanopipes form with their tubular axis along the film growth direction and extending to the free surface. The nanopipes are rectangular in cross section with areas of {approx_equal}1.5{times}5&hthinsp;nm{sup 2} and are self-organized along {l_angle}100{r_angle}, directions with an average separation of {approx_equal}40 nm. Their formation is the result of periodic kinetic surface roughening which leads to atomic self-shadowing and, under limited adatom mobility conditions, to deep cusps which are the origin of the nanopipes. The ScN layers are nearly relaxed, as determined from x-ray diffraction {theta}-2{theta} scans in both reflection and transmission, with only a small residual compressive strain due to differential thermal contraction. The Poisson ratio of ScN was found to be 0.20{plus_minus}0.04, in good agreement with {ital ab initio} calculations. {copyright} {ital 1999 American Institute of Physics.}

  19. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N films deposited by DC reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Fernandes, F.; Loureiro, A.; Polcar, T.; Cavaleiro, A.

    2014-01-01

    In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N coatings deposited by DC reactive magnetron sputtering. The results achieved for TiSiVN films were compared and discussed in relation to TiN and TiSiN films prepared as reference. All coatings presented a fcc NaCl-type structure. A shift of the diffraction peaks to higher angles with increasing Si and V contents suggested the formation of a substitutional solid solution in TiN phase. Hardness and Young's modulus of the coatings were similar regardless on V content. The onset of oxidation of the films decreased significantly to 500 °C when V was added into the films; this behaviour was independent of the Si and V contents. The thermogravimetric isothermal curves of TiSiVN coatings oxidized at temperatures below the melting point of α-V2O5 (∼685 °C) showed two stages: at an early stage, the weight increase over time is linear, whilst, in the second stage, a parabolic evolution can be fitted to the experimental data. At higher temperatures only a parabolic evolution was fitted. α-V2O5 was the main phase detected at the oxidized surface of the coatings. Reduction of α-V2O5 to β-V2O5 phase occurred for temperatures above its melting point.

  20. Mechanical, tribological, and electrochemical behavior of Cr 1- xAl xN coatings deposited by r.f. reactive magnetron co-sputtering method

    NASA Astrophysics Data System (ADS)

    Sanchéz, J. E.; Sanchéz, O. M.; Ipaz, L.; Aperador, W.; Caicedo, J. C.; Amaya, C.; Landaverde, M. A. Hernández; Beltran, F. Espinoza; Muñoz-Saldaña, J.; Zambrano, G.

    2010-02-01

    Chromium aluminum nitride (Cr 1- xAl xN) coatings were deposited onto AISI H13 steel and silicon substrates by r.f. reactive magnetron co-sputtering in (Ar/N 2) gas mixture from chromium and aluminum targets. Properties of deposited Cr 1- xAl xN coatings such as compositional, structural, morphological, electrochemical, mechanical and tribological, were investigated as functions of aluminum content. X-ray diffraction patterns of Cr 1- xAl xN coatings with different atomic concentrations of aluminum (0.51 < x < 0.69) showed the presence and evolution of (1 1 1), (2 0 0), and (1 0 2) crystallographic orientations associated to the Cr 1- xAl xN cubic and w-AlN phases, respectively. The rate of corrosion of the steel coated with Cr 1- xAl xN varied with the applied power; however, always being clearly lower when compared to the uncoated substrate. The behavior of the protective effect of the Cr 1- xAl xN coatings is based on the substitution of Cr for Al, when the power applied to the aluminum target increases. The mechanical properties were also sensitive to the power applied, leading to a maximum in hardness and a reduced elastic modulus of 30 and 303 GPa at 350 W and a monotonic decrease to 11 and 212 GPa at 450 W, respectively. Finally, the friction coefficient measured by pin-on disk revealed values between 0.45 and 0.70 in humid atmosphere.

  1. Submicrometer Hollow Bioglass Cones Deposited by Radio Frequency Magnetron Sputtering: Formation Mechanism, Properties, and Prospective Biomedical Applications.

    PubMed

    Popa, A C; Stan, G E; Besleaga, C; Ion, L; Maraloiu, V A; Tulyaganov, D U; Ferreira, J M F

    2016-02-01

    This work reports on the unprecedented magnetron sputtering deposition of submicrometric hollow cones of bioactive glass at low temperature in the absence of any template or catalyst. The influence of sputtering conditions on the formation and development of bioglass cones was studied. It was shown that larger populations of well-developed cones could be achieved by increasing the argon sputtering pressure. A mechanism describing the growth of bioglass hollow cones is presented, offering the links for process control and reproducibility of the cone features. The composition, structure, and morphology of the as-synthesized hollow cones were investigated by energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), grazing incidence geometry X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM)-selected area electron diffraction (SAED). The in vitro biological performance, assessed by degradation tests (ISO 10993-14) and cytocompatibility assays (ISO 10993-5) in endothelial cell cultures, was excellent. This allied with resorbability and the unique morphological features make the submicrometer hollow cones interesting candidate material devices for focal transitory permeabilization of the blood-brain barrier in the treatment of carcinoma and neurodegenerative disorders.

  2. Radio frequency magnetron sputtering of Li7La3Zr2O12 thin films for solid-state batteries

    NASA Astrophysics Data System (ADS)

    Lobe, S.; Dellen, C.; Finsterbusch, M.; Gehrke, H.-G.; Sebold, D.; Tsai, C.-L.; Uhlenbruck, S.; Guillon, O.

    2016-03-01

    Thin film batteries based on solid electrolytes having a garnet-structure like Li7La3Zr2O12 (LLZ) are considered as one option for safer batteries with increased power density. In this work we show the deposition of Ta- and Al-substituted LLZ thin films on stainless steel substrates by r.f. magnetron sputtering. The thin films were characterized by XRD, SEM and time-of-flight-secondary ion mass spectrometry (ToF-SIMS) to determine crystal structure, morphology and element distribution. The substrate temperature was identified to be one important parameter for the formation of cubic garnet-structured LLZ thin films. LLZ formation starts at around 650 °C. Single phase cubic thin films were obtained at substrate temperatures of 700 °C and higher. At these temperatures an interlayer is formed. Combination of SEM, ToF-SIMS and XRD indicated that this layer consists of γ-LiAlO2. The combined total ionic conductivity of the γ-LiAlO2 interlayer and the LLZ thin film (perpendicular to the plane) was determined to be 2.0 × 10-9 S cm-1 for the sample deposited at 700 °C. In-plane measurements showed a room temperature conductivity of 1.2 × 10-4 S cm-1 with an activation energy of 0.47 eV for the LLZ thin film.

  3. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-04-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}. The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 {mu}m, a saturation magnetization of 150 emu/cm{sup 3}, and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  4. Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Perumal, R.; Hassan, Z.

    2016-06-01

    Zinc oxide receives remarkable attention due to its several attractive physical properties. Zinc oxide thin films doped with nitrogen were grown by employing RF magnetron sputtering method at room temperature. Doping was accomplished in gaseous medium by mixing high purity nitrogen gas along with argon sputtering gas. Structural studies confirmed the high crystalline nature with c-axis oriented growth of the nitrogen doped zinc oxide thin films. The tensile strain was developed due to the incorporation of the nitrogen into the ZnO crystal lattice. Surface roughness of the grown films was found to be decreased with increasing doping level was identified through atomic force microscope analysis. The presenting phonon modes of each film were confirmed through FTIR spectral analysis. The increasing doping level leads towards red-shifting of the cut-off wavelength due to decrement of the band gap was identified through UV-vis spectroscopy. All the doped films exhibited p-type conductivity was ascertained using Hall measurements and the obtained results were presented.

  5. Deuterium Retention in the Co-Deposition Carbon Layers Deposited by Radio-Frequency Magnetron Sputtering in D2 Atmosphere

    NASA Astrophysics Data System (ADS)

    Zhang, Wei-Yuan; Shi, Li-Qun; Zhang, Bin; Hu, Jian-Sheng

    2014-05-01

    Carbon is deposited on C and Si substrates by rf magnetron plasma sputtering in a D2 atmosphere. The deposited layers are examined with ion beam analysis and thermal desorption spectroscopy (TDS). The growth rates of the layers deposited on Si decrease with increasing substrate temperature, while increase significantly with the increase of D2 pressure. Meanwhile, the deuterium concentrations in the layers deposited on the Si substrates decrease from 30% to 2% and from 31% to 1% on the C substrates, respectively, when the substrate temperature varies from 350K to 900 K. Similarly, the D concentration in the layer on the Si substrates increases from 3.4% to 47%, and from 8% to 35% on the C substrates when the D2 pressure increases from 0.3Pa to 8.0Pa. D desorption characterized by TDS is mainly in the forms of D2, HD, HDO, CD4, and C2D4, and a similar release peak occurs at 645 K. The release peak of D2 molecules at 960K can be attributed to the escaped gas from the thin co-deposited deuterium-rich carbon layer in the form of C-D bonding.

  6. ION MAGNETRON

    DOEpatents

    Gow, J.D.; Layman, R.W.

    1962-10-31

    A magnetohydrodynamic device or plasma generator of the ion magnetron class is described wherein a long central electrode is disposed along the axis of an evacuated cylinder. A radial electric field and an axial magnetic field are provided between the cylsnder and the electrode, forming a plasma trapping and heating region. For maximum effectiveness, neutral particles from the cylinder wall must be prevented from entering such region This is effected by forming a cylindrical sheath of electrons near the cylinder wall for ionizing undesired neutral particles, which are then trapped and removed by the magnetic field. An annular filament at one end of the device provides the electrons, which follow the axial magnetic field to a reflecting electrode at the opposite end of the device. (AEC)

  7. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    SciTech Connect

    Bakoglidis, Konstantinos D. Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  8. In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering

    SciTech Connect

    Cantas, Ayten; Aygun, Gulnur; Basa, Deepak Kumar

    2014-08-28

    We have investigated the reduction of unwanted interfacial SiO{sub 2} layer at HfO{sub 2}/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO{sub 2} thin films for possible direct contact between HfO{sub 2} thin film and Si substrate, necessary for the future generation devices based on high-κ HfO{sub 2} gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO{sub 2} thin films and also to undertake the in-situ characterization of the high-κ HfO{sub 2} thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO{sub 2} layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO{sub 2} thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO{sub 2} thin films are crystalline although they were deposited at room temperature.

  9. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential

    NASA Astrophysics Data System (ADS)

    Ogwu, A. A.; Darma, T. H.

    2013-05-01

    The achievement of a reproducible and controlled deposition of partitioned Cu2O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu2O/CuO films. The production of a core rich Cu2O and surface rich Cu2O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P3/2 and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P3/2 fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(Is) to main peak intensity ratio (Im) ≤ 0.45 as an indicator of a core rich Cu2O and surface rich Cu2O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu2O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future

  10. Reactive magnetron sputter deposition of (Ti,Cu)N nano-crystalline thin films: modeling of particle and energy flux toward the substrate

    NASA Astrophysics Data System (ADS)

    Rahmati, A.

    2012-08-01

    Ternary (Ti,Cu)N thin films were deposited by reactive dc magnetron sputtering on Si (111), glass slide, quartz and potassium bromide (KBr) substrates in molecular nitrogen ambient. This work has provided insight into the effects of substrate temperature, nitrogen content and particle and energy flux toward the substrate on the characteristics of (Ti,Cu)N films. Structural analysis of the films was identified by the x-ray diffraction (XRD) technique. Crystalline quality and phase stability are strongly dependent on substrate temperature. Ti-accommodated Cu3N structure results in lattice constant expansion and (100) preferential orientation. The bonding environment in these films was obtained by Fourier transform infrared (FTIR) spectroscopy. The surface morphology and chemical composition of the films were studied by using a scanning electron microscope (SEM)/energy dispersive x-ray spectroscopy (EDX). The films were aggregated as spherical grains. The atomic titanium to copper (Ti : Cu) ratio of (Ti,Cu)N films was less than that of the original target. An optical study was performed by vis-near-IR transmittance spectroscopy. The film thickness, refractive index and extinction coefficient were extracted from the measured transmittance. The as-deposited (Ti,Cu)N films are direct semiconductors with bandgap energy in the range of 2.57-3.23 eV. Nitrogen richness acts as an acceptor center and injects holes into the valence band (excited semiconductor). The amount of N attracted by the films was calculated using a model based on chemical bonding and the solubility process. Energy and angular contributions of sputtering yield were extracted from the existing literature to obtain a prediction about the atomic Ti : Cu ratio. By means of transport and range of ions in matter (TRIM.SP) Monte-Carlo simulation, the particle reflection coefficient of reflected N-neutrals was calculated. The initial energy of reflected N-neutrals and the sputtered particle at the

  11. Influence of vanadium incorporation on the microstructure, mechanical and tribological properties of Nb–V–Si–N films deposited by reactive magnetron sputtering

    SciTech Connect

    Ju, Hongbo; Xu, Junhua

    2015-09-15

    Composite Nb–V–Si–N films with various V contents (3.7–13.2 at.%) were deposited by reactive magnetron sputtering and the effects of V content on the microstructure, mechanical and tribological properties of Nb–V–Si–N films were investigated. The results revealed that a three-phase structure, consisting of face-centered cubic (fcc) Nb–V–Si–N, hexagonal close-packed (hcp) Nb–V–Si–N and amorphous Si{sub 3}N{sub 4}, co-exists in the Nb–V–Si–N films and the cubic phase is dominant. The hardness and critical load (L{sub c}) of Nb–V–Si–N films initially increased gradually and reached a summit, then decreased with the increasing V content in the films and the maximum values were 35 GPa and 9.8 N, respectively, at 6.4 at.% V. The combination of V into Nb–Si–N film led to the fracture toughness linearly increasing from 1.11 MPa·m{sup 1/2} at 3.7 at.% V to 1.67 MPa·m{sup 1/2} at 13.2 at.% V. At room temperature (RT), the average friction coefficient decreased from 0.80 at 3.7 at.% V to 0.55 at 13.2 at.% V for the Nb–V–Si–N films. The wear rate of Nb–V–Si–N films initially decreased and then increased after reaching a minimum value of about 6.35 × 10{sup −} {sup 7} mm{sup 3}/N·mm at 6.4 at.% V. As the rise of testing temperature from 200 °C to 600 °C, the average friction coefficient of Nb–V–Si–N films decreased with the increase of the testing temperature regardless of V content. However, the wear rate gradually increased for all films. The average friction coefficient and wear rate at RT and elevated temperatures were mainly influenced by the vanadium oxides with weakly bonded lattice planes. - Highlight: • Fcc-Nb–V–Si–N, hcp-Nb–V–Si–N and amorphous Si{sub 3}N{sub 4} co-existed in the films. • The amount of Si{sub 3}N{sub 4} decreased with increasing V content in the films. • Hardness of Nb–V–Si–N film (6.4 at.%) reached a maximum value of 35 GPa. • Addition of V led to the

  12. An efficient magnetron transmitter for superconducting accelerators

    DOE PAGES

    Kazakevich, G.; Lebedev, V.; Yakovlev, V.; Pavlov, V.

    2016-09-22

    A concept of a highly-efficient high-power magnetron transmitter allowing wide-band phase and the mid-frequency power control at the frequency of the locking signal is proposed. The proposal is aimed for powering Superconducting RF (SRF) cavities of intensity-frontier accelerators. The transmitter is intended to operate with phase and amplitude control feedback loops allowing suppression of microphonics and beam loading in the SRF cavities. The concept utilizes injectionlocked magnetrons controlled in phase by the locking signal supplied by a feedback system. The injection-locking signal pre-excites the magnetron and allows its operation below the critical voltage. This realizes control of the magnetron powermore » in a wide range by control of the magnetron current. Pre-excitation of the magnetron by the locking signal provides an output power range up to 10 dB. Experimental studies were carried out with 2.45 GHz, 1 kW, CW magnetrons. They demonstrated stable operation of the magnetrons and power control at a low noise level. In conclusion, an analysis of the kinetics of the drifting charge in the drift approximation substantiates the concept and the experimental results.« less

  13. Peer-to-Peer Magnetron Locking

    NASA Astrophysics Data System (ADS)

    Cruz, Edward Jeffrey

    The viability of coherent power combination of multiple high-efficiency, moderate power magnetrons requires a thorough understanding of frequency and phase control. Injection locking of conventional magnetrons, and other types of oscillators, employing a master-to-slave configuration has been studied theoretically and experimentally. This dissertation focuses on the peer-to-peer locking, where each oscillator acts as a master of and slave to all others, between two conventional magnetrons, where the general condition for locking was recently derived. The experiments performed on peer-to-peer locking of two 1-kW magnetrons verify the recently developed theory on the condition under which the two nonlinear oscillators may be locked to a common frequency and relative phase. This condition reduces to Adler's classical locking condition (master-slave) if the coupling is one way. Dependent on the degree of coupling, the frequency of oscillation when locking occurs was found to not necessarily lie between the two magnetrons' free running frequencies. Likewise, when the locking condition was violated, the beat of the spectrum was not necessarily found to be equal to the difference between the free running frequencies. The frequency of oscillation and relative phase between the two magnetrons when locking did occur were found to correspond to one of two solution modes given by the recent theory. The accessibility of the two possible modes is yet to be determined. This work was supported by ONR, AFRL, AFOSR, L-3 Communications Electron Devices Division and Northrop-Grumman Corporation.

  14. Enhancement of the mechanical properties of AZ31 magnesium alloy via nanostructured hydroxyapatite thin films fabricated via radio-frequency magnetron sputtering.

    PubMed

    Surmeneva, M A; Tyurin, A I; Mukhametkaliyev, T M; Pirozhkova, T S; Shuvarin, I A; Syrtanov, M S; Surmenev, R A

    2015-06-01

    The structure, composition and morphology of a radio-frequency (RF) magnetron sputter-deposited dense nano-hydroxyapatite (HA) coating that was deposited on the surface of an AZ31 magnesium alloy were characterized using AFM, SEM, EDX and XRD. The results obtained from SEM and XRD experiments revealed that the bias applied during the deposition of the HA coating resulted in a decrease in the grain and crystallite size of the film having a crucial role in enhancing the mechanical properties of the fabricated biocomposites. A maximum hardness of 9.04 GPa was found for the HA coating, which was prepared using a bias of -50 V. The hardness of the HA film deposited on the grounded substrate (GS) was found to be 4.9 GPa. The elastic strain to failure (H/E) and the plastic deformation resistance (H(3)/E(2)) for an indentation depth of 50 nm for the HA coating fabricated at a bias of -50 V was found to increase by ~30% and ~74%, respectively, compared with the coating deposited at the GS holder. The nanoindentation tests demonstrated that all of the HA coatings increased the surface hardness on both the microscale and the nanoscale. Therefore, the results revealed that the films deposited on the surface of the AZ31 magnesium alloy at a negative substrate bias can significantly enhance the wear resistance of this resorbable alloy.

  15. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  16. Growth Behavior of Ga-Doped ZnO Thin Films Deposited on Au/SiN/Si(001) Substrates by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Seo, Seon Hee; Kang, Hyon Chol

    2013-11-01

    This paper reports the growth behavior of Ga-doped ZnO (ZnO:Ga) thin films deposited on Au/SiN/Si(001) substrates by radio-frequency magnetron sputtering. The microstructures of the overgrown ZnO:Ga thin films were investigated by performing X-ray diffraction, scanning electron microcopy, and transmission electron microscopy analyses. It was confirmed that the growth process proceeds through three stages. In the first stage, nano-scale ZnO:Ga islands were grown on the SiN layer, while a fairly continuous flat structure was formed on the Au nanoparticles (NPs). In the second stage of the growth process, ZnO:Ga domains with different growth orientations, depending strongly on the crystalline planes of the host Au NPs, were nucleated. These domains then grew at different rates, resulting in a change in the morphology from the initial shape reflecting that of the Au NPs to a sunflower-type shape. In the final stage, columnar growth with a preferred (0002) orientation along the surface normal direction became dominant.

  17. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition.

  18. Simultaneous catalyst deposition and growth of aligned carbon nanotubes on SiO{sub 2}/Si substrates by radio frequency magnetron sputtering

    SciTech Connect

    Scalese, S.; Scuderi, V.; Privitera, V.; Pennisi, A.; Simone, F.

    2007-12-01

    Radio frequency magnetron sputtering has been used for the synthesis of aligned carbon nanotubes (CNTs) on a SiO{sub 2}/Si substrate, with simultaneous in situ catalyst deposition. This method allows the use of substrates without the need of a surface predeposition of catalytic particles. In particular, among the metals considered, we observed the formation of CNTs using W or Ni as catalysts. Only in the case of Ni did we find that the CNTs are aligned along the target-substrate direction, unlike the randomly oriented CNTs observed when W was used as catalyst. Scanning and transmission electron microscopies show that the catalytic Ni nanoparticle is found mostly on the tip of the obtained bamboolike CNTs, while W nanoparticles are encapsulated inside hollow nanotubes, at different points along their length. We ascribe not only the observed structural differences to the size of the W and Ni particles but also to a different diffusion behavior of C in the two kinds of metallic clusters.

  19. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  20. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition. PMID:27483888

  1. Preparation, structure and ferromagnetic properties of the nanocrystalline Ti1-xMnxO2 thin films grown by radio frequency magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Ding, Peng; Liu, Fa-Min; Yang, Xin-An; Li, Jian-Qi

    2008-02-01

    This paper reported that the Mn-doped TiO2 films were prepared by radio frequency (RF) magnetron co-sputtering. X-ray diffraction measurements indicate that the samples are easy to form the rutile structure, and the sizes of the crystal grains grow big and big as the Mn concentration increases. X-ray photoemission spectroscopy measurements and high resolution transmission electron microscope photographs confirm that the manganese ions have been effectively doped into the TiO2 crystal when the Mn concentration is lower than 21%. The magnetic property measurements show that the Ti1-xMnxO2 (x = 0.21) films are ferromagnetic at room temperature, and the saturation magnetization, coercivity, and saturation field are 16.0emu/cm3, 167.5 × 80A/m and 3740 × 80A/m at room temperature, respectively. The room-temperature ferromagnetism of the films can be attributed to the new rutile Ti1-xMnxO2 structure formed by the substitution of Mn4+ for Ti4+ into the TiO2 crystal lattice, and could be explained by O vacancy (VO)-enhanced ferromagnetism model.

  2. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

    NASA Astrophysics Data System (ADS)

    Zhao, Yan; Gao, Wei; Xu, Bo; Li, Ying-Ai; Li, Hong-Dong; Gu, Guang-Rui; Yin, Hong

    2016-10-01

    The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51572105, 61504046, and 51272224), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, the Development and Reform Commission of Jilin Province, China (Grant No. 2015Y050), and the Scientific Research Foundation for the Returned Overseas of Jilin Province, China.

  3. Review of Magnetron Developments

    NASA Astrophysics Data System (ADS)

    Vyas, Sandeep Kumar; Verma, Rajendra Kumar; Maurya, Shivendra; Singh, V. V. P.

    2016-09-01

    Magnetrons have been the most efficient high power microwave sources for decades. In the twenty-first century, many of the development works are headed towards the performance improvement of CW industrial magnetrons. In this review article, the development works and techniques, used on different types of magnetrons, for the performance enhancement in the past two decades have been discussed. The article focuses on the state of the art of CW magnetron and the direction it will take in foreseeable future. In addition it also glimpses some of the major variants of magnetron which have further opened up scope in mm-THz spectrum of electromagnetism.

  4. A study of Ta xC 1 -x coatings deposited on biomedical 316L stainless steel by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ding, M. H.; Wang, B. L.; Li, L.; Zheng, Y. F.

    2010-11-01

    In this paper, Ta xC 1 -x coatings were deposited on 316L stainless steel (316L SS) by radio-frequency (RF) magnetron sputtering at various substrate temperatures ( Ts) in order to improve its corrosion resistance and hemocompatibility. XRD results indicated that Ts could significantly change the microstructure of Ta xC 1 -x coatings. When Ts was <150 °C, the Ta xC 1 -x coatings were in amorphous condition, whereas when Ts was ≥150 °C, TaC phase was formed, exhibiting in the form of particulates with the crystallite sizes of about 15-25 nm ( Ts = 300 °C). Atomic force microscope (AFM) results showed that with the increase of Ts, the root-mean-square (RMS) values of the Ta xC 1 -x coatings decreased. The nano-indentation experiments indicated that the Ta xC 1 -x coating deposited at 300 °C had a higher hardness and modulus. The scratch test results demonstrated that Ta xC 1 -x coatings deposited above 150 °C exhibited good adhesion performance. Tribology tests results demonstrated that Ta xC 1 -x coatings exhibited excellent wear resistance. The results of potentiodynamic polarization showed that the corrosion resistance of the 316L SS was improved significantly because of the deposited Ta xC 1 -x coatings. The platelet adhesion test results indicated that the Ta xC 1 -x coatings deposited at Ts of 150 °C and 300 °C possessed better hemocompatibility than the coating deposited at Ts of 25 °C. Additionally, the hemocompatibility of the Ta xC 1 -x coating on the 316L SS was found to be influenced by its surface roughness, hydrophilicity and the surface energy.

  5. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    SciTech Connect

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-21

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness R{sub q} evolves with film thickness as a power law, R{sub q} ∼ d{sub f}{sup β}, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β{sub 1} = 0.14 and β{sub 2} = 0.64 for RT, and β{sub 1} = 0.89 and β{sub 2} = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  6. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  7. Time and frequency dependent rheology of reactive silica gels.

    PubMed

    Wang, Miao; Winter, H Henning; Auernhammer, Günter K

    2014-01-01

    In a mixture of sodium silicate and low concentrated sulfuric acid, nano-sized silica particles grow and may aggregate to a system spanning gel network. We studied the influence of the finite solubility of silica at high pH on the mechanical properties of the gel with classical and piezo-rheometers. Direct preparation of the gel sample in the rheometer cell avoided any pre-shear of the gel structure during the filling of the rheometer. The storage modulus of the gel grew logarithmically with time with two distinct growth laws. The system passes the gel point very quickly but still shows relaxation at low frequency, typically below 6 rad/s. We attribute this as a sign of structural rearrangements due to the finite solubility of silica at high pH. The reaction equilibrium between bond formation and dissolution maintains a relatively large bond dissolution rate, which leads to a finite life time of the bonds and behavior similar to physical gels. This interpretation is also compatible with the logarithmic time dependence of the storage modulus. The frequency dependence was more pronounced for lower water concentrations, higher temperatures and shorter reaction times. With two relaxation models (the modified Cole-Cole model and the empirical Baumgaertel-Schausberger-Winter model) we deduced characteristic times from the experimental data. Both models approximately described the data and resulted in similar relaxation times.

  8. Reactivable passive radio-frequency identification temperature indicator

    NASA Astrophysics Data System (ADS)

    Windl, Roman; Bruckner, Florian; Abert, Claas; Suess, Dieter; Huber, Thomas; Vogler, Christoph; Satz, Armin

    2015-05-01

    A low cost, passive radio-frequency identification (RFID) temperature indicator with (re-) activation at any point of time is presented. The capability to detect a temperature excursion is realized by magnets and a solution with a melting point at the critical temperature. As the critical temperature is exceeded, a magnetic indicator switches to non-reversible and this can be monitored via a giant magnetoresistance sensor connected to a RFID tag. Depending on the solutions or metal alloys, detection of critical temperatures in a wide range from below 0 °C and up to more than 100 °C is possible. The information if a threshold temperature was exceeded (indicator state) as well as the identification number, current temperature, and user defined data can be obtained via RFID.

  9. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  10. Electrochromic properties and performance of NiOx films and their corresponding all-thin-film flexible devices preparedby reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhang, Fan; He, Yingchun; Yu, Hang; Liu, Famin; Wang, Mei; Diao, Xungang

    2016-10-01

    Nickel oxide (NiOx) thin films were deposited by direct current magnetron sputtering technique onto flexible substrates with various oxygen (O2) partial pressures. The influence of O2 contents during deposition process on film structure, morphology, composition, optical and electrochromic (EC) characteristics of the films were investigated. The EC response for nonstoichiometric NiOx films shows a strong dependence on grain size variations and surface morphology. Finally, the multiple-layer stacks ITO/NiOx/Ta2O5:H/WO3/ITO were sequentially vacuum deposited over flexible polyethylene terephthalate plates based on the optimization of NiOx single layers. A large optical contrast up to 60% and a good durability are obtained for full device. To perform preliminary research on the mechanical properties within flexible devices, we introduced nontrivial changes to the interfacial properties by replacing the glass with flexible polymers. The effects were studied through static bending and the nano-scratch test.

  11. Electrochromic behavior of W(x)Si(y)O(z) thin films prepared by reactive magnetron sputtering at normal and glancing angles.

    PubMed

    Gil-Rostra, Jorge; Cano, Manuel; Pedrosa, José M; Ferrer, Francisco Javier; García-García, Francisco; Yubero, Francisco; González-Elipe, Agustín R

    2012-02-01

    This work reports the synthesis at room temperature of transparent and colored W(x)Si(y)O(z) thin films by magnetron sputtering (MS) from a single cathode. The films were characterized by a large set of techniques including X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), Fourier transform infrared (FT-IR), and Raman spectroscopies. Their optical properties were determined by the analysis of the transmission and reflection spectra. It was found that both the relative amount of tungsten in the W-Si MS target and the ratio O(2)/Ar in the plasma gas were critical parameters to control the blue coloration of the films. The long-term stability of the color, attributed to the formation of a high concentration of W(5+) and W(4+) species, has been related with the formation of W-O-Si bond linkages in an amorphous network. At normal geometry (i.e., substrate surface parallel to the target) the films were rather compact, whereas they were very porous and had less tungsten content when deposited in a glancing angle configuration. In this case, they presented outstanding electrochromic properties characterized by a fast response, a high coloration, a complete reversibility after more than one thousand cycles and a relatively very low refractive index in the bleached state. PMID:22208156

  12. Surface treatment of diamond-like carbon films by reactive Ar/CF4 high-power pulsed magnetron sputtering plasmas

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Nishimura, Ryotaro; Azuma, Kingo; Nakao, Setsuo; Sonoda, Tsutomu; Kusumori, Takeshi; Ozaki, Kimihiro

    2015-12-01

    Surface modification of diamond-like carbon films deposited by a high-power pulsed magnetron sputtering (HPPMS) of Ar was carried out by a HPPMS of Ar/CF4 mixture, changing a CF4 fraction from 2.5% to 20%. The hardness of the modified films markedly decreased from about 13 to about 3.5 GPa with increasing CF4 fraction, whereas the water contact angle of the modified films increased from 68° to 109° owing to the increase in the CFx content on the film surface. C 1s spectra in X-ray photoelectron spectroscopy indicated that a graphitic structure of modified films was formed at CF4 fractions less than 5%, above which the modified films possessed a polymer-like structure. Influence of treatment time on the properties of the modified films was also investigated in the range of treatment time from 5 to 30 min. The properties of the modified films did not depend on the treatment time in the range of treatment time longer than 10 min, whereas the water contact angle was not sensitive to the treatment time at any treatment time.

  13. Effects of different frequencies of transcutaneous electrical nerve stimulation on venous vascular reactivity

    PubMed Central

    Franco, O.S.; Paulitsch, F.S.; Pereira, A.P.C.; Teixeira, A.O.; Martins, C.N.; Silva, A.M.V.; Plentz, R.D.M.; Irigoyen, M.C.; Signori, L.U.

    2014-01-01

    Transcutaneous electrical nerve stimulation (TENS) is a type of therapy used primarily for analgesia, but also presents changes in the cardiovascular system responses; its effects are dependent upon application parameters. Alterations to the cardiovascular system suggest that TENS may modify venous vascular response. The objective of this study was to evaluate the effects of TENS at different frequencies (10 and 100 Hz) on venous vascular reactivity in healthy subjects. Twenty-nine healthy male volunteers were randomized into three groups: placebo (n=10), low-frequency TENS (10 Hz, n=9) and high-frequency TENS (100 Hz, n=10). TENS was applied for 30 min in the nervous plexus trajectory from the superior member (from cervical to dorsal region of the fist) at low (10 Hz/200 μs) and high frequency (100 Hz/200 μs) with its intensity adjusted below the motor threshold and intensified every 5 min, intending to avoid accommodation. Venous vascular reactivity in response to phenylephrine, acetylcholine (endothelium-dependent) and sodium nitroprusside (endothelium-independent) was assessed by the dorsal hand vein technique. The phenylephrine effective dose to achieve 70% vasoconstriction was reduced 53% (P<0.01) using low-frequency TENS (10 Hz), while in high-frequency stimulation (100 Hz), a 47% increased dose was needed (P<0.01). The endothelium-dependent (acetylcholine) and independent (sodium nitroprusside) responses were not modified by TENS, which modifies venous responsiveness, and increases the low-frequency sensitivity of α1-adrenergic receptors and shows high-frequency opposite effects. These changes represent an important vascular effect caused by TENS with implications for hemodynamics, inflammation and analgesia. PMID:24820225

  14. Effects of different frequencies of transcutaneous electrical nerve stimulation on venous vascular reactivity.

    PubMed

    Franco, O S; Paulitsch, F S; Pereira, A P C; Teixeira, A O; Martins, C N; Silva, A M V; Plentz, R D M; Irigoyen, M C; Signori, L U

    2014-05-01

    Transcutaneous electrical nerve stimulation (TENS) is a type of therapy used primarily for analgesia, but also presents changes in the cardiovascular system responses; its effects are dependent upon application parameters. Alterations to the cardiovascular system suggest that TENS may modify venous vascular response. The objective of this study was to evaluate the effects of TENS at different frequencies (10 and 100 Hz) on venous vascular reactivity in healthy subjects. Twenty-nine healthy male volunteers were randomized into three groups: placebo (n=10), low-frequency TENS (10 Hz, n=9) and high-frequency TENS (100 Hz, n=10). TENS was applied for 30 min in the nervous plexus trajectory from the superior member (from cervical to dorsal region of the fist) at low (10 Hz/200 μs) and high frequency (100 Hz/200 μs) with its intensity adjusted below the motor threshold and intensified every 5 min, intending to avoid accommodation. Venous vascular reactivity in response to phenylephrine, acetylcholine (endothelium-dependent) and sodium nitroprusside (endothelium-independent) was assessed by the dorsal hand vein technique. The phenylephrine effective dose to achieve 70% vasoconstriction was reduced 53% (P<0.01) using low-frequency TENS (10 Hz), while in high-frequency stimulation (100 Hz), a 47% increased dose was needed (P<0.01). The endothelium-dependent (acetylcholine) and independent (sodium nitroprusside) responses were not modified by TENS, which modifies venous responsiveness, and increases the low-frequency sensitivity of α1-adrenergic receptors and shows high-frequency opposite effects. These changes represent an important vascular effect caused by TENS with implications for hemodynamics, inflammation and analgesia.

  15. Synthesis of low resistive p type Cu4O3 thin films by DC reactive magnetron sputtering and conversion of Cu4O3 into CuO by laser irradiation

    NASA Astrophysics Data System (ADS)

    Murali, Dhanya S.; Subrahmanyam, A.

    2016-09-01

    Copper oxide thin films are a topic of intense investigation by several researchers. Copper reacting with oxygen, depending upon the available energy, forms CuO, Cu2O and Cu4O3 phases. Among these, Cu4O3 is a difficult phase to prepare. In the present communication, we report the preparation and properties of the stable phase of Cu4O3. These Cu4O3 thin films have been prepared at room temperature (300 K) on borosilicate glass by reactive DC magnetron sputtering. Cu4O3 thin films (of thickness 265  ±  5 nm) are p-type semiconductors (hole density 2.4  ×  1018 cc‑1 and Hall mobility 0.04 cm2 V‑1 s‑1) and show a low resistivity (55 Ω cm). They have a direct band gap of 2.34 eV and an indirect band gap of 1.50 eV. The surface work function of Cu4O3 (measured by Kelvin Probe technique) is 5.35  ±  0.01 eV. Cu4O3 films are irradiated with laser radiation of 532 nm wavelength and 10 MW cm‑2 (120 s) power density. It shows a phase transformation to CuO which is confirmed by the Raman Spectroscopy measurements.

  16. Synthesis of low resistive p type Cu4O3 thin films by DC reactive magnetron sputtering and conversion of Cu4O3 into CuO by laser irradiation

    NASA Astrophysics Data System (ADS)

    Murali, Dhanya S.; Subrahmanyam, A.

    2016-09-01

    Copper oxide thin films are a topic of intense investigation by several researchers. Copper reacting with oxygen, depending upon the available energy, forms CuO, Cu2O and Cu4O3 phases. Among these, Cu4O3 is a difficult phase to prepare. In the present communication, we report the preparation and properties of the stable phase of Cu4O3. These Cu4O3 thin films have been prepared at room temperature (300 K) on borosilicate glass by reactive DC magnetron sputtering. Cu4O3 thin films (of thickness 265  ±  5 nm) are p-type semiconductors (hole density 2.4  ×  1018 cc-1 and Hall mobility 0.04 cm2 V-1 s-1) and show a low resistivity (55 Ω cm). They have a direct band gap of 2.34 eV and an indirect band gap of 1.50 eV. The surface work function of Cu4O3 (measured by Kelvin Probe technique) is 5.35  ±  0.01 eV. Cu4O3 films are irradiated with laser radiation of 532 nm wavelength and 10 MW cm-2 (120 s) power density. It shows a phase transformation to CuO which is confirmed by the Raman Spectroscopy measurements.

  17. Epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) by reactive high-power impulse magnetron sputtering

    SciTech Connect

    Eklund, Per Frodelius, Jenny; Hultman, Lars; Lu, Jun; Magnfält, Daniel

    2014-01-15

    Al{sub 2}O{sub 3} was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti{sub 2}AlC(0001) thin films on α-Al{sub 2}O{sub 3}(0001) substrates. The Al{sub 2}O{sub 3} was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al{sub 2}O{sub 3}(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti{sub 2}AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al{sub 2}O{sub 3}(111)//Ti{sub 2}AlC(0001) (out-of-plane) and γ- Al {sub 2}O{sub 3}(22{sup ¯}0)// Ti {sub 2} AlC (112{sup ¯}0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti{sub 2}AlC by depletion of Al and diffusion into and through the γ-Al{sub 2}O{sub 3} layer.

  18. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  19. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  20. High-frequency behavior of FeN thin films fabricated by using reactive sputtering

    NASA Astrophysics Data System (ADS)

    Hwang, Tae-Jong; Lee, Joonsik; Kim, Ki Hyeon; Kim, Dong Ho

    2016-08-01

    We used ferromagnetic resonance (FMR) and its relationship with the static magnetic properties to investigate the high-frequency behavior of FeN thin films prepared by using reactive sputtering. The FMR was observed in the frequency range from 2 to 18 GHz in the FeN films fabricated at a proper nitrogen flow rate (NFR). In those FeN thin films, a decrease in the saturation magnetization and a corresponding decrease of the FMR frequency were observed as the NFR was increased during the deposition. The external field dependences of the FMR frequencies fit the Kittel formula well, and the Landé g-factors determined from the fit were found to be very close to the free electron value. The high-field damping parameters were almost insensitive to the NFR. However, the lowfield damping parameters exhibited a high sensitivity to the NFR very similar to the dependence of the hard-axis coercivity on the NFR, suggesting that extrinsic material properties, such as impurities and defect structures, could be important in deciding the low-field damping behavior.

  1. Electrochemical properties of Sn-substituted LiMn2O4 thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Kong, Woo Yeon; Yim, Haena; Yoon, Seok-Jin; Nahm, Sahn; Choi, Ji-Won

    2013-05-01

    The LiMn2O4 and LiSn0.0125Mn1975O4 thin films were grown on Pt/Ti/SiO2/Si (100) substrate by RF magnetron sputtering. To obtain the structural stability and good cycle performance, deposition parameters, namely working pressure, sputtering gas ratio of Ar and O2, post-annealing temperature were established. The structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The electrochemical properties were estimated by two electrode half-cell test with WBCS 3000 (Wonatech, Korea) at constant current rate of 1 C-rate. The Sn substituted LiMn2O4 thin film deposited at 10 mtorr with mixture of argon and oxygen (Ar/O2 = 3/1) and then annealed at 500 degrees C in O2 atmosphere showed good cycle performance. The Sn substituted LiMn2O4 thin films showed larger capacity of -30 microAh/microm-cm2 and higher cyclability than LiMn2O4 thin films. PMID:23858845

  2. Populations of metastable and resonant argon atoms in radio frequency magnetron plasmas used for deposition of indium-zinc-oxide films

    SciTech Connect

    Maaloul, L.; Morel, S.; Stafford, L.

    2012-03-15

    This work reports optical absorption spectroscopy measurements of the number density of Ar atoms in resonant ({sup 3}P{sub 1}, {sup 1}P{sub 1}) and metastable ({sup 3}P{sub 2}, {sup 3}P{sub 0}) states in rf magnetron sputtering plasmas used for the deposition of ZnO-based thin films. While the density of Ar {sup 3}P{sub 2} and {sup 3}P{sub 0} was fairly independent of pressure in the range of experimental conditions investigated, the density of Ar {sup 3}P{sub 1} and {sup 1}P{sub 1} first sharply increased with pressure and then reached a plateau at values close to those of the {sup 3}P{sub 2} and {sup 3}P{sub 0} levels at pressures above about 50 mTorr. At such pressures, ultraviolet radiation from resonant states becomes trapped such that these levels behave as metastable states. For a self-bias voltage of -115 V and pressures in the 5-100 mTorr range, similar number densities of Ar resonant and metastable atoms were obtained for Zn, ZnO, and In{sub 2}O{sub 3} targets, suggesting that, over the range of experimental conditions investigated, collisions between these excited species and sputtered Zn, In, and O atoms played only a minor role on the discharge kinetics. The metastable-to-ground state number density ratios were also fitted to the predictions of a global model using the average electron temperature, T{sub e}, as the only adjustable parameter. For all targets examined, the values of T{sub e} deduced from this method were in excellent agreement with those obtained from Langmuir probe measurements.

  3. Dielectric Properties and Leakage Current Characterization of the Ba(SnxTi1-x)O3 Thin Films Prepared by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Huey-Jiuan; Huang, Hong-Hsin; Chen, Chung-Yuan; Wu, Nan-Chung; Wang, Moo-Chin

    2006-09-01

    Ba(SnxTi1-x)O3 (BSxT1-x, 0≤ x≤ 0.15) thin films deposited by rf magnetron sputtering with platinum (Pt) top and silver (Ag) bottom electrodes have been characterized with respect to the dielectric properties and leakage current density as a function of composition and rf power. BSxT1-x thin films are amorphous when deposited at rf powers of 100 and 125 W, 5× 10-3 Torr working pressure, an O2/(O2+Ar) ratio of 1/(1+9) and room temperature. The XRD result shows the presence of a single perovskite phase of BaTiO3, operated at a range of rf power increasing from 125 to 175 W. The maximum capacitance of Pt/BSxT1-x/Si/Ag capacitors increases with increasing Sn content. The ferroelectric characteristics of the capacitance-voltage hystersis loop in the BSxT1-x thin films are observed. The leakage current density of the Pt/BS0.15T0.85/Si/Ag capacitors at 100 kV/cm varies from mid 10-6 to about 10-8 A/cm2 with the rf power decreasing from 175 to 125 W. The dominant conduction mechanism of the BS0.15T0.85 thin films has shown to be related to Schottky emission (SE) and Poole-Frenkel (PF) mechanisms. The remnant polarization (Pr) and coercive electric field (Ec) of the above device appear to decrease with increasing Sn content.

  4. Second order elasticity at hypersonic frequencies of reactive polyurethanes as seen by generalized Cauchy relations.

    PubMed

    Philipp, M; Vergnat, C; Müller, U; Sanctuary, R; Baller, J; Possart, W; Alnot, P; Krüger, J K

    2009-01-21

    The non-equilibrium process of polymerization of reactive polymers can be accompanied by transition phenomena like gelation or the chemical glass transition. The sensitivity of the mechanical properties at hypersonic frequencies-including the generalized Cauchy relation-to these transition phenomena is studied for three different polyurethanes using Brillouin spectroscopy. As for epoxies, the generalized Cauchy relation surprisingly holds true for the non-equilibrium polymerization process and for the temperature dependence of polyurethanes. Neither the sol-gel transition nor the chemical and thermal glass transitions are visible in the representation of the generalized Cauchy relation. Taking into account the new results and combining them with general considerations about the elastic properties of the isotropic state, an improved physical foundation of the generalized Cauchy relation is proposed.

  5. Derivation and generalization of the dispersion relation of rising-sun magnetron with sectorial and rectangular cavities

    SciTech Connect

    Shi, Di-Fu; Qian, Bao-Liang; Wang, Hong-Gang; Li, Wei

    2013-12-15

    Field analysis method is used to derive the dispersion relation of rising-sun magnetron with sectorial and rectangular cavities. This dispersion relation is then extended to the general case in which the rising-sun magnetron can be with multi-group cavities of different shapes and sizes, and from which the dispersion relations of conventional magnetron, rising-sun magnetron, and magnetron-like device can be obtained directly. The results show that the relative errors between the theoretical and simulation values of the dispersion relation are less than 3%, the relative errors between the theoretical and simulation values of the cutoff frequencies of π mode are less than 2%. In addition, the influences of each structure parameter of the magnetron on the cutoff frequency of π mode and on the mode separation are investigated qualitatively and quantitatively, which may be of great interest to designing a frequency tuning magnetron.

  6. High power impulse magnetron sputtering using a rotating cylindrical magnetron

    SciTech Connect

    Leroy, W. P.; Mahieu, S.; Depla, D.; Ehiasarian, A. P.

    2010-01-15

    Both the industrially favorable deposition technique, high power impulse magnetron sputtering (HIPIMS), and the industrially popular rotating cylindrical magnetron have been successfully combined. A stable operation without arcing, leaks, or other complications for the rotatable magnetron was attained, with current densities around 11 A cm{sup -2}. For Ti and Al, a much higher degree in ionization in the plasma region was observed for the HIPIMS mode compared to the direct current mode.

  7. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential

    SciTech Connect

    Ogwu, A. A.; Darma, T. H.

    2013-05-14

    The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory

  8. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  9. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  10. Magnetron injection gun scaling

    NASA Astrophysics Data System (ADS)

    Lawson, W.

    1988-04-01

    A set of tradeoff equations was simplified to obtain scaling laws for magnetron injection guns (MIGs). The constraints are chosen to examine the maximum-peak-power capabilities of MIGs. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations in which each MIG is designed to double the beam power of an existing design by adjusting one of the four fundamental parameters.

  11. Dielectric cavity relativistic magnetron

    NASA Astrophysics Data System (ADS)

    Hashemi, S. M. A.

    2010-02-01

    An alteration in the structure of the A6 relativistic magnetron is proposed, which introduces an extra degree of freedom to its design and enhances many of its quality factors. This modification involves the partial filling of the cavities of the device with a low-loss dielectric material. The operation of a dielectric-filled A6 is simulated; the results indicate single-mode operation at the desired π mode and a substantially cleaner rf spectrum.

  12. Spin Biochemistry Modulates Reactive Oxygen Species (ROS) Production by Radio Frequency Magnetic Fields

    PubMed Central

    Usselman, Robert J.; Hill, Iain; Singel, David J.; Martino, Carlos F.

    2014-01-01

    The effects of weak magnetic fields on the biological production of reactive oxygen species (ROS) from intracellular superoxide (O2•−) and extracellular hydrogen peroxide (H2O2) were investigated in vitro with rat pulmonary arterial smooth muscle cells (rPASMC). A decrease in O2•− and an increase in H2O2 concentrations were observed in the presence of a 7 MHz radio frequency (RF) at 10 μTRMS and static 45 μT magnetic fields. We propose that O2•− and H2O2 production in some metabolic processes occur through singlet-triplet modulation of semiquinone flavin (FADH•) enzymes and O2•− spin-correlated radical pairs. Spin-radical pair products are modulated by the 7 MHz RF magnetic fields that presumably decouple flavin hyperfine interactions during spin coherence. RF flavin hyperfine decoupling results in an increase of H2O2 singlet state products, which creates cellular oxidative stress and acts as a secondary messenger that affects cellular proliferation. This study demonstrates the interplay between O2•− and H2O2 production when influenced by RF magnetic fields and underscores the subtle effects of low-frequency magnetic fields on oxidative metabolism, ROS signaling, and cellular growth. PMID:24681944

  13. The evaluation of increase in hemodialysis frequency on C-reactive protein levels and nutritional status.

    PubMed

    Rashidi, Ali Akbar; Soleimani, Ali Reza; Nikoueinejad, Hassan; Sarbolouki, Shokooh

    2013-03-16

    Malnutrition and inflammation are the most important causes of cardiovascular disease in hemodialysis patients. This study was conducted to evaluate the effect of increase in hemodialysis frequency on C-reactive protein (CRP) level and nutritional markers in contrast to previous routine method. 18 hemodialysis patients with a mean age of 53±16 years were randomly selected in this before-and-after clinical trial. The patients under a standard hemodialysis of 3 times/4 h per week were converted to 4 times/4 h for a period of 6 weeks. The CRP, albumin, triglyceride, total cholesterol, LDL, HDL serum levels, anthropometric indices and 24-h diet recall intake was assessed before and after of the period. The data were analyzed using paired t-test, and P-value less than 0.05 was considered significant. All patients completed the study. Mean weight, body mass index and serum albumin increased while serum CRP level decreased significantly after the intervention (P<0.03). Triglyceride, total cholesterol, LDL, HDL, as well as energy, protein and fat intake had no significant change before and after the study. Increase in dialysis frequency decreased systemic inflammation and improved the nutritional state of hemodialysis patients. Therefore, it may decrease the risk of cardiovascular events in these patients.

  14. Oleophobic optical coating deposited by magnetron PVD

    NASA Astrophysics Data System (ADS)

    Bernt, D.; Ponomarenko, V.; Pisarev, A.

    2016-09-01

    Thin oxinitride films of Zn-Sn-O-N and Si-Al-O-N were deposited on glass by reactive magnetron sputtering at various nitrogen-to-oxygen ratios. Nitrogen added to oxygen led to decrease of the surface roughness and increase of oleophobic properties studied by the oil-drop test. The best oleophobity was obtained for Zn-Sn-O-N oxinitride at Zn:Sn=1:1 and N:O=1:2. Improved oleophobic properties were also demonstrated if the oxinitride film was deposited on top of the multilayer coating as the final step in the industrial cycle of production of energy efficient glass.

  15. Magic-T-Coupled Magnetrons

    NASA Technical Reports Server (NTRS)

    Dickinson, R. M.

    1985-01-01

    Outputs of two magnetrons added coherently in scheme based on resonant waveguide coupling and injection phase locking. In addition, filaments are turned off after starting. Overall effect is relatively-inexpensive, lowpower, noisy magnetrons generate clean carrier signals of higher power that ordinarily require more expensive klystrons.

  16. Subthalamic nucleus high-frequency stimulation modulates neuronal reactivity to cocaine within the reward circuit.

    PubMed

    Hachem-Delaunay, Sabira; Fournier, Marie-Line; Cohen, Candie; Bonneau, Nicolas; Cador, Martine; Baunez, Christelle; Le Moine, Catherine

    2015-08-01

    The subthalamic nucleus (STN) is a critical component of a complex network controlling motor, associative and limbic functions. High-frequency stimulation (HFS) of the STN is an effective therapy for motor symptoms in Parkinsonian patients and can also reduce their treatment-induced addictive behaviors. Preclinical studies have shown that STN HFS decreases motivation for cocaine while increasing that for food, highlighting its influence on rewarding and motivational circuits. However, the cellular substrates of these effects remain unknown. Our objectives were to characterize the cellular consequences of STN HFS with a special focus on limbic structures and to elucidate how STN HFS may interfere with acute cocaine effects in these brain areas. Male Long-Evans rats were subjected to STN HFS (130 Hz, 60 μs, 50-150 μA) for 30 min before an acute cocaine injection (15 mg/kg) and sacrificed 10 min following the injection. Neuronal reactivity was analyzed through the expression of two immediate early genes (Arc and c-Fos) to decipher cellular responses to STN HFS and cocaine. STN HFS only activated c-Fos in the globus pallidus and the basolateral amygdala, highlighting a possible role on emotional processes via the amygdala, with a limited effect by itself in other structures. Interestingly, and despite some differential effects on Arc and c-Fos expression, STN HFS diminished the c-Fos response induced by acute cocaine in the striatum. By preventing the cellular effect of cocaine in the striatum, STN HFS might thus decrease the reinforcing properties of the drug, which is in line with the inhibitory effect of STN HFS on the rewarding and reinforcing properties of cocaine.

  17. Subthalamic nucleus high-frequency stimulation modulates neuronal reactivity to cocaine within the reward circuit.

    PubMed

    Hachem-Delaunay, Sabira; Fournier, Marie-Line; Cohen, Candie; Bonneau, Nicolas; Cador, Martine; Baunez, Christelle; Le Moine, Catherine

    2015-08-01

    The subthalamic nucleus (STN) is a critical component of a complex network controlling motor, associative and limbic functions. High-frequency stimulation (HFS) of the STN is an effective therapy for motor symptoms in Parkinsonian patients and can also reduce their treatment-induced addictive behaviors. Preclinical studies have shown that STN HFS decreases motivation for cocaine while increasing that for food, highlighting its influence on rewarding and motivational circuits. However, the cellular substrates of these effects remain unknown. Our objectives were to characterize the cellular consequences of STN HFS with a special focus on limbic structures and to elucidate how STN HFS may interfere with acute cocaine effects in these brain areas. Male Long-Evans rats were subjected to STN HFS (130 Hz, 60 μs, 50-150 μA) for 30 min before an acute cocaine injection (15 mg/kg) and sacrificed 10 min following the injection. Neuronal reactivity was analyzed through the expression of two immediate early genes (Arc and c-Fos) to decipher cellular responses to STN HFS and cocaine. STN HFS only activated c-Fos in the globus pallidus and the basolateral amygdala, highlighting a possible role on emotional processes via the amygdala, with a limited effect by itself in other structures. Interestingly, and despite some differential effects on Arc and c-Fos expression, STN HFS diminished the c-Fos response induced by acute cocaine in the striatum. By preventing the cellular effect of cocaine in the striatum, STN HFS might thus decrease the reinforcing properties of the drug, which is in line with the inhibitory effect of STN HFS on the rewarding and reinforcing properties of cocaine. PMID:25982833

  18. Alpha reactivity to first names differs in subjects with high and low dream recall frequency

    PubMed Central

    Ruby, Perrine; Blochet, Camille; Eichenlaub, Jean-Baptiste; Bertrand, Olivier; Morlet, Dominique; Bidet-Caulet, Aurélie

    2013-01-01

    Studies in cognitive psychology showed that personality (openness to experience, thin boundaries, absorption), creativity, nocturnal awakenings, and attitude toward dreams are significantly related to dream recall frequency (DRF). These results suggest the possibility of neurophysiological trait differences between subjects with high and low DRF. To test this hypothesis we compared sleep characteristics and alpha reactivity to sounds in subjects with high and low DRF using polysomnographic recordings and electroencephalography (EEG). We acquired EEG from 21 channels in 36 healthy subjects while they were presented with a passive auditory oddball paradigm (frequent standard tones, rare deviant tones and very rare first names) during wakefulness and sleep (intensity, 50 dB above the subject's hearing level). Subjects were selected as High-recallers (HR, DRF = 4.42 ± 0.25 SEM, dream recalls per week) and Low-recallers (LR, DRF = 0.25 ± 0.02) using a questionnaire and an interview on sleep and dream habits. Despite the disturbing setup, the subjects' quality of sleep was generally preserved. First names induced a more sustained decrease in alpha activity in HR than in LR at Pz (1000–1200 ms) during wakefulness, but no group difference was found in REM sleep. The current dominant hypothesis proposes that alpha rhythms would be involved in the active inhibition of the brain regions not involved in the ongoing brain operation. According to this hypothesis, a more sustained alpha decrease in HR would reflect a longer release of inhibition, suggesting a deeper processing of complex sounds than in LR during wakefulness. A possibility to explain the absence of group difference during sleep is that increase in alpha power in HR may have resulted in awakenings. Our results support this hypothesis since HR experienced more intra sleep wakefulness than LR (30 ± 4 vs. 14 ± 4 min). As a whole our results support the hypothesis of neurophysiological trait differences in high

  19. Recirculating planar magnetrons: simulations and experiment

    SciTech Connect

    Franzi, Matthew; Gilgenbach, Ronald; French, David; Lau, Y.Y.; Simon, David; Hoff, Brad; Luginsland, John W.

    2011-07-01

    The Recirculating Planar Magnetron (RPM) is a novel crossed-field device whose geometry is expected to reduce thermal load, enhance current yield as well as ease the geometric limitations in scaling to high RF frequencies as compared to the conventional cylindrical magnetrons. The RPM has two different adaptations: A. Axial B field and radial E field; B. Radial B field and axial E field. The preliminary configuration (A) to be used in experiments at the University of Michigan consists of two parallel planar sections which join on either end by cylindrical regions to form a concentric extruded ellipse. Similar to conventional magnetrons, a voltage across the AK gap in conjunction with an axial magnetic field provides the electrons with an ExB drift. The device is named RPM because the drifting electrons recirculate from one planar region to the other. The drifting electrons interact with the resonantly tuned slow wave structure on the anode causing spoke formation. These electron spokes drive a RF electric field in the cavities from which RF power may be extracted to Waveguides. The RPM may be designed in either a conventional configuration with the anode on the outside, for simplified extraction, or as an inverted magnetron with the anode at the inner conductor, for fast start-up. Currently, experiments at the Pulsed Power and Microwave Laboratory at the University of Michigan are in the setup and design phase. A conventional RPM with planar cavities is to be installed on the Michigan Electron Long Beam Accelerator (MELBA) and is anticipated to operate at -200kV, 0.2T with a beam current of 1-10 kA at 1GHz. The conventional RPM consists of 12 identical planar cavities, 6 on each planar side, with simulated quality factor of 20.

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    Volume 201, Issue14 (November 2004)

    Articles in the Current Issue:

    Rapid Research Note

    Highly (001)-textured WS2-x films prepared by reactive radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Seeger, S.; Weiß, V.

    2004-11-01

    Highly (001)-oriented WS2-x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation.

  1. Mechanisms of the formation of low spatial frequency LIPSS on Ni/  Ti reactive multilayers

    NASA Astrophysics Data System (ADS)

    Cangueiro, Liliana T.; Cavaleiro, André J.; Morgiel, Jerzy; Vilar, Rui

    2016-09-01

    The present paper aims at investigating the mechanisms of imprinting LIPSS (laser-induced periodic surface structures), arrangements of parallel ripples with a periodicity slightly smaller than the radiation wavelength, on metallic surfaces. To this end, Ni/Ti multi-layered samples produced by magnetron sputtering were textured with LIPSS using a 1030 nm, 560 fs pulse duration laser and pulse frequency of 1 kHz, and the resulting surfaces were investigated by scanning and transmission electron microscopies. The results obtained show that the core of the ripples remains in the solid state during the laser treatment, except for a layer of material about 30 nm thick at the valleys and 65–130 nm thick at the top of the crests, which melts and solidifies forming NiTi with an amorphous structure. A layer of ablation debris composed of amorphous NiTi nanoparticles was redeposited on the LIPSS crests. The results achieved indicate that the periodic variation of the absorbed radiation intensity leads to a variation of the predominant ablation mechanisms and, consequently, of the ablation rate, thus explaining the rippled surface topography. The comparison with theoretical predictions suggests that in the intensity maxima (corresponding to the valleys) the material is removed by liquid spallation, while at its minima (the crests) the predominant material removal mechanism is melting and vaporization. These results support Sipe et al LIPSS formation theory and are in contradiction with the theories that explain the formation of LIPSS by convective fluid flow or self-organized mass transport of a laser-induced instability.

  2. Mechanisms of the formation of low spatial frequency LIPSS on Ni/  Ti reactive multilayers

    NASA Astrophysics Data System (ADS)

    Cangueiro, Liliana T.; Cavaleiro, André J.; Morgiel, Jerzy; Vilar, Rui

    2016-09-01

    The present paper aims at investigating the mechanisms of imprinting LIPSS (laser-induced periodic surface structures), arrangements of parallel ripples with a periodicity slightly smaller than the radiation wavelength, on metallic surfaces. To this end, Ni/Ti multi-layered samples produced by magnetron sputtering were textured with LIPSS using a 1030 nm, 560 fs pulse duration laser and pulse frequency of 1 kHz, and the resulting surfaces were investigated by scanning and transmission electron microscopies. The results obtained show that the core of the ripples remains in the solid state during the laser treatment, except for a layer of material about 30 nm thick at the valleys and 65-130 nm thick at the top of the crests, which melts and solidifies forming NiTi with an amorphous structure. A layer of ablation debris composed of amorphous NiTi nanoparticles was redeposited on the LIPSS crests. The results achieved indicate that the periodic variation of the absorbed radiation intensity leads to a variation of the predominant ablation mechanisms and, consequently, of the ablation rate, thus explaining the rippled surface topography. The comparison with theoretical predictions suggests that in the intensity maxima (corresponding to the valleys) the material is removed by liquid spallation, while at its minima (the crests) the predominant material removal mechanism is melting and vaporization. These results support Sipe et al LIPSS formation theory and are in contradiction with the theories that explain the formation of LIPSS by convective fluid flow or self-organized mass transport of a laser-induced instability.

  3. [Objective assessment of the reactive effectiveness of middle frequency electromyostimulation using mechanical muscle diagnosis (myomechanography)].

    PubMed

    Ullmann, P; Viol, M; Schleicher, W

    1989-03-01

    Using a new method of measuring passive-mechanical tonus-parameters of muscle tissue in situ ("Myomechanographie, MMG") we evaluated in 12 healthy men reactive changes of the muscle tonus immediate after one middle-frequent Electromyostimulations (EMS)-period (duration: 15 min). With the MMG was proved, that the applied EMS cause an organic effectiveness; the muscle in situ is more "elastic". This showes especially the increase of the single parameters 'elastic retraction' and 'total compressibility'. In the comparison group (n = 12) we obtained contrary after relaxly steady position (duration: 15 min.) clear reduced single parameters. The muscle is reactive less "elastic". PMID:2730546

  4. Highly adherent bioactive glass thin films synthetized by magnetron sputtering at low temperature.

    PubMed

    Stan, G E; Pasuk, I; Husanu, M A; Enculescu, I; Pina, S; Lemos, A F; Tulyaganov, D U; El Mabrouk, K; Ferreira, J M F

    2011-12-01

    Thin (380-510 nm) films of a low silica content bioglass with MgO, B(2)O(3), and CaF(2) as additives were deposited at low-temperature (150°C) by radio-frequency magnetron sputtering onto titanium substrates. The influence of sputtering conditions on morphology, structure, composition, bonding strength and in vitro bioactivity of sputtered bioglass films was investigated. Excellent pull-out adherence (~73 MPa) was obtained when using a 0.3 Pa argon sputtering pressure (BG-a). The adherence declined (~46 MPa) upon increasing the working pressure to 0.4 Pa (BG-b) or when using a reactive gas mixture (~50 MPa). The SBF tests clearly demonstrated strong biomineralization features for all bioglass sputtered films. The biomineralization rate increased from BG-a to BG-b, and yet more for BG-c. A well-crystallized calcium hydrogen phosphate-like phase was observed after 3 and 15 days of immersion in SBF in all bioglass layers, which transformed monotonously into hydroxyapatite under prolonged SBF immersion. Alkali and alkali-earth salts (NaCl, KCl and CaCO(3)) were also found at the surface of samples soaked in SBF for 30 days. The study indicated that features such as composition, structure, adherence and bioactivity of bioglass films can be tailored simply by altering the magnetron sputtering working conditions, proving that this less explored technique is a promising alternative for preparing implant-type coatings.

  5. Modulated electron cyclotron drift instability in a high-power pulsed magnetron discharge.

    PubMed

    Tsikata, Sedina; Minea, Tiberiu

    2015-05-01

    The electron cyclotron drift instability, implicated in electron heating and anomalous transport, is detected in the plasma of a planar magnetron. Electron density fluctuations associated with the mode are identified via an adapted coherent Thomson scattering diagnostic, under direct current and high-power pulsed magnetron operation. Time-resolved analysis of the mode amplitude reveals that the instability, found at MHz frequencies and millimeter scales, also exhibits a kHz-scale modulation consistent with the observation of larger-scale plasma density nonuniformities, such as the rotating spoke. Sharply collimated axial fluctuations observed at the magnetron axis are consistent with the presence of escaping electrons in a region where the magnetic and electric fields are antiparallel. These results distinguish aspects of magnetron physics from other plasma sources of similar geometry, such as the Hall thruster, and broaden the scope of instabilities which may be considered to dictate magnetron plasma features. PMID:26001007

  6. Modulated Electron Cyclotron Drift Instability in a High-Power Pulsed Magnetron Discharge

    NASA Astrophysics Data System (ADS)

    Tsikata, Sedina; Minea, Tiberiu

    2015-05-01

    The electron cyclotron drift instability, implicated in electron heating and anomalous transport, is detected in the plasma of a planar magnetron. Electron density fluctuations associated with the mode are identified via an adapted coherent Thomson scattering diagnostic, under direct current and high-power pulsed magnetron operation. Time-resolved analysis of the mode amplitude reveals that the instability, found at MHz frequencies and millimeter scales, also exhibits a kHz-scale modulation consistent with the observation of larger-scale plasma density nonuniformities, such as the rotating spoke. Sharply collimated axial fluctuations observed at the magnetron axis are consistent with the presence of escaping electrons in a region where the magnetic and electric fields are antiparallel. These results distinguish aspects of magnetron physics from other plasma sources of similar geometry, such as the Hall thruster, and broaden the scope of instabilities which may be considered to dictate magnetron plasma features.

  7. Tracking the Magnetron Motion in FT-ICR Mass Spectrometry.

    PubMed

    Jertz, Roland; Friedrich, Jochen; Kriete, Claudia; Nikolaev, Evgeny N; Baykut, Gökhan

    2015-08-01

    In Fourier transform ion cyclotron resonance spectrometry (FT-ICR MS) the ion magnetron motion is not usually directly measured, yet its contribution to the performance of the FT-ICR cell is important. Its presence is manifested primarily by the appearance of even-numbered harmonics in the spectra. In this work, the relationship between the ion magnetron motion in the ICR cell and the intensities of the second harmonic signal and its sideband peak in the FT-ICR spectrum is studied. Ion motion simulations show that during a cyclotron motion excitation of ions which are offset to the cell axis, a position-dependent radial drift of the cyclotron center takes place. This radial drift can be directed outwards if the ion is initially offset towards one of the detection electrodes, or it can be directed inwards if the ion is initially offset towards one of the excitation electrodes. Consequently, a magnetron orbit diameter can increase or decrease during a resonant cyclotron excitation. A method has been developed to study this behavior of the magnetron motion by acquiring a series of FT-ICR spectra using varied post-capture delay (PCD) time intervals. PCD is the delay time after the capture of the ions in the cell before the cyclotron excitation of the ion is started. Plotting the relative intensity of the second harmonic sideband peak versus the PCD in each mass spectrum leads to an oscillating "PCD curve". The position and height of minima and maxima of this curve can be used to interpret the size and the position of the magnetron orbit. Ion motion simulations show that an off-axis magnetron orbit generates even-numbered harmonic peaks with sidebands at a distance of one magnetron frequency and multiples of it. This magnetron offset is due to a radial offset of the electric field axis versus the geometric cell axis. In this work, we also show how this offset of the radial electric field center can be corrected by applying appropriate DC correction voltages to the

  8. An Experimental Investigation of Reactivity to Ecological Momentary Assessment Frequency among Adults Trying to Quit Smoking

    PubMed Central

    Minami, Haruka; Yeh, Vivian M.; Bold, Krysten W.

    2015-01-01

    Aims Ecological Momentary Assessment (EMA) captures real-time reports in subjects’ natural environments. This experiment manipulated EMA frequency to estimate effects on abstinence and peri-cessation subjective experiences. Design In this randomized trial, subjects had an equal chance of being assigned to low-frequency (once) or high-frequency (6 times) daily EMA for 4 weeks (1 week pre- and 3 weeks post-cessation). Participants completed 6 office visits over 5 weeks and 6- and 12-week follow-up telephone interviews. Setting Community participants were recruited from central New Jersey, USA. Participants 110 adult daily smokers seeking to quit smoking were included in intent-to-treat analyses of tobacco abstinence; 94 were available for secondary analyses of peri-cessation subjective ratings. Measurements Primary outcomes were cessation (abstaining at least 24 hours within 2 weeks of attempting to quit) and prolonged abstinence (no relapse between weeks 2 and 12 post-quit). Secondary outcomes were mean levels and growth in ratings of cigarette craving, affect, and quitting motivation and self-efficacy. Findings EMA frequency was unrelated to cessation (Odds Ratio=1.37, 95% CI=0.60–3.10) or prolonged abstinence (Odds Ratio=1.04, 95% CI=0.45–2.39) in intent-to-treat analyses. High-frequency EMA was associated with lower craving (B=−.54, SE=.18, p=.004, anxiety (B=−.42, SE=.17, p=.015), anger (B=−.47, SE=.14, p=.001), hunger (B=−.39, SE=.17, p=0.25), and positive affect (B=−.43, SE=.20, p=.03). Conclusions In smokers trying to quit, more frequent ecological momentary assessment (EMA) self-monitoring results in lower craving, anxiety, anger, hunger, and positive affect. It is not clear whether this translates into higher rates of smoking abstinence. PMID:26011583

  9. Wurtzite structure Sc{sub 1-x}Al{sub x}N solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

    SciTech Connect

    Hoeglund, Carina; Birch, Jens; Bareno, Javier; Persson, Per O. A.; Wingqvist, Gunilla; Zukauskaite, Agne; Hultman, Lars; Alling, Bjoern; Czigany, Zsolt

    2010-06-15

    AlN(0001) was alloyed with ScN with molar fractions up to {approx}22%, while retaining a single-crystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al{sub 2}O{sub 3}(0001) and MgO(111) substrates. Films with ScN contents between 23% and {approx}50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt structure Sc{sub 1-x}Al{sub x}N(111) films. The experimental results are analyzed with ion beam analysis, x-ray diffraction, and transmission electron microscopy, together with ab initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.

  10. Controlling Fluences of Reactive Species Produced by Multipulse DBDs onto Wet Tissue: Frequency and Liquid Thickness

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Kushner, Mark J.

    2015-09-01

    Tissue covered by a thin liquid layer treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluences of radicals and ions onto the tissue. These fluences are controlled in part by frequency and liquid thickness. In this paper, we report on results from a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 stationary or random streamers at different repetition rates and liquid thicknesses followed by 10 s to 2 min of afterglow. At 100 Hz, NOaq and OHaq are mixed by randomly striking streamers, although they have different rates of solvation. NOaq is nearly completely consumed by reactions with OHaq at the liquid surface. Only H2O2aq, produced through OHaq mutual reactions, survives to reach the tissue. After 100 pulses, the liquid becomes ozone-rich, in which the nitrous ion, NO2-aq, is converted to the nitric ion, NO3-aq. Reducing the pulse frequency to 10 Hz results in significant fluence of NOaq to the tissue as NOaq can escape during the interpulse period from the liquid surface where OHaq is formed. For the same reason, NO2-aq can also reach deeper into the liquid at lower frequency. Frequency and thickness of the liquid are methods to control the plasma produced aqueous species to the underlying tissue. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724).

  11. Linear ion source with magnetron hollow cathode discharge

    SciTech Connect

    Tang, D.L.; Pu, S.H.; Wang, L.S.; Qiu, X.M.; Chu, Paul K.

    2005-11-15

    A linear ion source with magnetron hollow cathode discharge is described in this paper. The linear ion source is based on an anode layer thruster with closed-drift electrons that move in a closed path in the ExB fields. An open slit configuration is designed at the end of the ion source for the extraction of the linear ion beam produced by the magnetron hollow cathode discharge. The special configurations enable uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. The ion current density and uniformity were experimentally evaluated. Using the ion source, surface modification was conducted on polyethylene terephthalate polymer films to improve the adhesion strength with ZnS coatings.

  12. Low-frequency process for silicon-on-insulator deep reactive ion etching

    NASA Astrophysics Data System (ADS)

    Wasilik, Matthew; Pisano, Albert P.

    2001-11-01

    Due to the inherently non-uniform etching effects in the standard DRIE (Deep Reactive Ion Etch) process, a new technique has been developed specifically for SOI (silicon on insulator) etching. The new system embodies a separate LF power supply that is pulsed when being applied to the platen during the etch cycle. This lends itself to assisting in the reduction of ionic charging at the insulator layer in deep trenches. Consequently, notching or footing of Si structures is disallowed. From this a decrease in over etch sensitivity emerges, with the end result being the ability to produce high-quality, large aspect ratio structures. Si etch rates in the same DRIE process may differ due to three basic effects: Aspect ratio dependent etch (ARDE), microloading (RIE-lag), and the general loading effect by which edges of the substrate etch faster than the center. When etching to a buried insulating layer these effects tend to indirectly encourage footing. The purpose of the research involved was to find optimal process parameters that would minimize footing. Factorial design of experiment technique was used to accomplish this in a two step process. First, main and second order effects on etch-rate uniformity were studied. Then, once supplied with process parameters that minimize uniformity effects, parameter settings that minimize footing were found. The end result is a purse of optimized DRIE-SOI recipes that produce superb high-aspect ratio Silicon structures.

  13. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  14. Reactive hydroxyl radical-driven oral bacterial inactivation by radio frequency atmospheric plasma

    SciTech Connect

    Kang, Sung Kil; Lee, Jae Koo; Choi, Myeong Yeol; Koo, Il Gyo; Kim, Paul Y.; Kim, Yoonsun; Kim, Gon Jun; Collins, George J.; Mohamed, Abdel-Aleam H.

    2011-04-04

    We demonstrated bacterial (Streptococcus mutans) inactivation by a radio frequency power driven atmospheric pressure plasma torch with H{sub 2}O{sub 2} entrained in the feedstock gas. Optical emission spectroscopy identified substantial excited state OH generation inside the plasma and relative OH formation was verified by optical absorption. The bacterial inactivation rate increased with increasing OH generation and reached a maximum 5-log{sub 10} reduction with 0.6%H{sub 2}O{sub 2} vapor. Generation of large amounts of toxic ozone is drawback of plasma bacterial inactivation, thus it is significant that the ozone concentration falls within recommended safe allowable levels with addition of H{sub 2}O{sub 2} vapor to the plasma.

  15. Reactive hydroxyl radical-driven oral bacterial inactivation by radio frequency atmospheric plasma

    NASA Astrophysics Data System (ADS)

    Kang, Sung Kil; Choi, Myeong Yeol; Koo, Il Gyo; Kim, Paul Y.; Kim, Yoonsun; Kim, Gon Jun; Mohamed, Abdel-Aleam H.; Collins, George J.; Lee, Jae Koo

    2011-04-01

    We demonstrated bacterial (Streptococcus mutans) inactivation by a radio frequency power driven atmospheric pressure plasma torch with H2O2 entrained in the feedstock gas. Optical emission spectroscopy identified substantial excited state •OH generation inside the plasma and relative •OH formation was verified by optical absorption. The bacterial inactivation rate increased with increasing •OH generation and reached a maximum 5-log10 reduction with 0.6% H2O2 vapor. Generation of large amounts of toxic ozone is drawback of plasma bacterial inactivation, thus it is significant that the ozone concentration falls within recommended safe allowable levels with addition of H2O2 vapor to the plasma.

  16. Numerical simulation of oscillating magnetrons

    NASA Astrophysics Data System (ADS)

    Palevsky, A.; Bekefi, G.; Drobot, A. T.

    1981-08-01

    The temporal evolution of the current, voltage, and RF fields in magnetron-type devices is simulated by a two-dimensional, electromagnetic, fully relativistic particle-in-cell code. The simulation allows for the complete geometry of the anode vane structure, space-charge-limited cathode emission and the external power source, and is applied to a 54-vane inverted relativistic magnetron at a voltage of 300 kV and a magnetic field of 0.17 T. Fields in the RF structure and the anode-cathode gap are solved from Maxwell's equations so that results contain all the two-dimensional resonances of the system, and the numerical solution yields a complete space-time history of the particle momenta. In the presence of strong RF fields, the conventional definition of voltages is found to be inappropriate, and a definition is developed to reduce to the conventional results.

  17. Automation of high-frequency sampling of environmental waters for reactive species

    NASA Astrophysics Data System (ADS)

    Kim, H.; Bishop, J. K.; Wood, T.; Fung, I.; Fong, M.

    2011-12-01

    Trace metals, particularly iron and manganese, play a critical role in some ecosystems as a limiting factor to determine primary productivity, in geochemistry, especially redox chemistry as important electron donors and acceptors, and in aquatic environments as carriers of contaminant transport. Dynamics of trace metals are closely related to various hydrologic events such as rainfall. Storm flow triggers dramatic changes of both dissolved and particulate trace metals concentrations and affects other important environmental parameters linked to trace metal behavior such as dissolved organic carbon (DOC). To improve our understanding of behaviors of trace metals and underlying processes, water chemistry information must be collected for an adequately long period of time at higher frequency than conventional manual sampling (e.g. weekly, biweekly). In this study, we developed an automated sampling system to document the dynamics of trace metals, focusing on Fe and Mn, and DOC for a multiple-year high-frequency geochemistry time series in a small catchment, called Rivendell located at Angelo Coast Range Reserve, California. We are sampling ground and streamwater using the automated sampling system in daily-frequency and the condition of the site is substantially variable from season to season. The ranges of pH of ground and streamwater are pH 5 - 7 and pH 7.8 - 8.3, respectively. DOC is usually sub-ppm, but during rain events, it increases by an order of magnitude. The automated sampling system focuses on two aspects- 1) a modified design of sampler to improve sample integrity for trace metals and DOC and 2) remote controlling system to update sampling volume and timing according to hydrological conditions. To maintain sample integrity, the developed method employed gravity filtering using large volume syringes (140mL) and syringe filters connected to a set of polypropylene bottles and a borosilicate bottle via Teflon tubing. Without filtration, in a few days, the

  18. Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

    PubMed

    Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  19. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    PubMed Central

    Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    Summary We investigate the effect of the thickness of the silicon nitride (SiNx) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed. PMID:26665074

  20. Comparative study between atmospheric microwave and low-frequency plasmas: Production efficiency of reactive species and their effectiveness

    NASA Astrophysics Data System (ADS)

    Won, Im Hee; Kim, Myoung Soo; Kim, Ho Young; Shin, Hyun Kook; Kwon, Hyoung Cheol; Sim, Jae Yoon; Lee, Jae Koo

    2014-01-01

    The characteristics of low-frequency (LF) and microwave-powered plasmas were investigated. The optical emission of these two plasmas indicated that more chemicals were generated by microwave plasma than by LF plasma with the intensities being higher by factors of about 9, 3, 5, and 1.6 for OH (309 nm), O (777 nm), NO (247 nm), and Ca2+ (290 nm), respectively. Application experiments were also conducted. A steel plate became hydrophilic after 45 s of microwave plasma treatment. This is more than ten times faster than in the case of LF plasma treatment, an action related to the generation of reactive species (e.g., OH, O, and NO) as measured by optical emission spectroscopy (OES). Ca2+ generation was verified by blood coagulation experiment. Microwave-plasma-induced coagulation was twice faster than LF-plasma-induced coagulation. Simulation results that explain the chemical generation in microwave plasma were also included. High-energy electrons were considered a major factor for microwave plasma characteristics.

  1. Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zhu, J. Q.; Zheng, W. T.; Han, J. C.

    2009-01-01

    The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge 1- xC x) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH 4/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures ( Ta) above 300 °C decreases, whereas that of C-H bonds show a decrease only when Ta exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at Ta above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge 1- xC x films are almost constant against Ta, which can be ascribed to the unchanged ratios of Ge/C and sp 2-C/sp 3-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge 1- xC x double-layer film on ZnS substrate is still maintained after annealing at 700 °C.

  2. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-02-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  3. Damage characterisation of InP after reactive ion etching using the low-frequency noise measurement technique

    NASA Astrophysics Data System (ADS)

    Gottwald, P.; Kräutle, H.; Szentpáli, B.; Kincses, Zs; Hartnagel, H. L.

    1997-04-01

    Reactive ion etching (RIE) is a basic tool in the processing of InP optoelectronic and photonic integrated circuits (OEICs and PICs). However, due to the bombardment of the high energy ions of the plasma, heavy damage of the semiconductor surface occurs. Additionally, when using a CH 4 + Ar + H 2 plasma significant proton implantation also takes place. Investigating n-type InP etched by specific RIE processes, we show, that the low-frequency noise (LFN) generated in an appropriately designed planar resistor pattern is affected in a characteristic manner depending on the process-parameters. Further, a decrease of the pattern resistance and also significant surface leakage currents were observed, due to a strong enhancement of the surface electron concentration. In n-type material the {1}/{f} noise component is enhanced as the damaged portion of the current path increases. Additionally, generation-recombination (g-r) components are also present in the spectrum indicating that specific deep levels appear in the damaged region. Using rapid thermal annealing (RTA) as a post-process step, the {1}/{f} noise component decreases and the sample resistance increases. At the same time the surface leakage currents disappear. These observations are due to the fact, that an out diffusion of the implanted H + takes place and it is likely that process-induced modifications of the surface layer will tend to recover. To avoid proton implantation, etching only by Ar plasma was investigated. Damage and an enhanced surface conduction were observed. Applying a short HF-dip, a slight increase of the g-r noise intensity was detected.

  4. Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H{sub 2} radio frequency magnetron discharge

    SciTech Connect

    Mensah, S. L.; Naseem, Hameed H.; Abu-Safe, Husam; Gordon, M. H.

    2012-07-15

    The plasma parameters and ion energy distributions (IED) of the dominant species in an Ar-H{sub 2} discharge are investigated with an energy resolved mass spectrometer and a Langmuir probe. The plasmas are generated in a conventional magnetron chamber powered at 150 W, 13.56 MHz at hydrogen flow rates ranging from 0 to 25 sccm with a fixed argon gas flow rate of 15 sccm. Various H{sub n}{sup +}, SiH{sub n}{sup +}, SiH{sub n} fragments (with n = 1, 2, 3) together with Ar{sup +} and ArH{sup +} species are detected in the discharge. The most important species for the film deposition is SiH{sub n} (with n = 0, 1, 2). H fragments affect the hydrogen content in the material. The flux of Ar{sup +} decreases and the flux of ArH{sup +} increases when the hydrogen flow rate is increased; however, both fluxes saturate at hydrogen flow rates above 15 sccm. Electron density, n{sub e}, electron energy, T{sub e}, and ion density, n{sub i}, are estimated from the Langmuir probe data. T{sub e} is below 1.2 eV at hydrogen flow rates below 8 sccm, and about 2 eV at flow rates above 8 sccm. n{sub e} and n{sub i} decrease with increased hydrogen flow but the ratio of n{sub i} to n{sub e} increases. The formation of H{sup +} ions with energies above 36 eV and electrons with energies greater than 2 eV contributes to the decrease in hydrogen content at hydrogen flow rates above 8 sccm. Analysis of the IEDs indicates an inter-dependence of the species and their contribution to the thin film growth and properties.

  5. Experimental radiation cooled magnetrons for space

    NASA Astrophysics Data System (ADS)

    Brown, W. C.; Pollock, M.

    The heat disposal problem that occurs in the microwave generator of the Solar Power Satellite when it converts dc power from solar photovoltaic arrays into microwave power for transmission to earth is examined. A theoretical study is made of the radiation cooling of a magnetron directional amplifier, and some experimental data obtained from the QKH 2244 magnetron are presented. This instrument is an unpackaged microwave oven magnetron to which an anodized aluminum radiator has been attached and whose magnetic field is supplied by special samarium cobalt magnets.

  6. 3-D Printed High Power Microwave Magnetrons

    NASA Astrophysics Data System (ADS)

    Jordan, Nicholas; Greening, Geoffrey; Exelby, Steven; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad

    2015-11-01

    The size, weight, and power requirements of HPM systems are critical constraints on their viability, and can potentially be improved through the use of additive manufacturing techniques, which are rapidly increasing in capability and affordability. Recent experiments on the UM Recirculating Planar Magnetron (RPM), have explored the use of 3-D printed components in a HPM system. The system was driven by MELBA-C, a Marx-Abramyan system which delivers a -300 kV voltage pulse for 0.3-1.0 us, with a 0.15-0.3 T axial magnetic field applied by a pair of electromagnets. Anode blocks were printed from Water Shed XC 11122 photopolymer using a stereolithography process, and prepared with either a spray-coated or electroplated finish. Both manufacturing processes were compared against baseline data for a machined aluminum anode, noting any differences in power output, oscillation frequency, and mode stability. Evolution and durability of the 3-D printed structures were noted both visually and by tracking vacuum inventories via a residual gas analyzer. Research supported by AFOSR (grant #FA9550-15-1-0097) and AFRL.

  7. A Plasma Lens for Magnetron Sputtering

    SciTech Connect

    Anders, Andre; Brown, Jeff

    2010-11-30

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  8. Sum-Frequency Generation Spectroscopy for Studying Organic Layers at Water-Air Interfaces: Microlayer Monitoring and Surface Reactivity

    NASA Astrophysics Data System (ADS)

    Laß, Kristian; Kleber, Joscha; Bange, Hermann; Friedrichs, Gernot

    2015-04-01

    The sea surface microlayer, according to commonly accepted terminology, comprises the topmost millimetre of the oceanic water column. It is often enriched with organic matter and is directly influenced by sunlight exposure and gas exchange with the atmosphere, hence making it a place for active biochemistry and photochemistry as well as for heterogeneous reactions. In addition, surface active material either is formed or accumulates directly at the air-water interface and gives rise to very thin layers, sometimes down to monomolecular thickness. This "sea surface nanolayer" determines the viscoelastic properties of the seawater surface and thus may impact the turbulent air-sea gas exchange rates. To this effect, this small scale layer presumably plays an important role for large scale changes of atmospheric trace gas concentrations (e.g., by modulating the ocean carbon sink characteristics) with possible implications for coupled climate models. To date, detailed knowledge about the composition, structure, and reactivity of the sea surface nanolayer is still scarce. Due to its small vertical dimension and the small amount of material, this surfactant layer is very difficult to separate and analyse. A way out is the application of second-order nonlinear optical methods, which make a direct surface-specific and background-free detection of this interfacial layer possible. In recent years, we have introduced the use of vibrational sum frequency generation (VSFG) spectroscopy to gain insight into natural and artificial organic monolayers at the air-water interface. In this contribution, the application of VSFG spectroscopy for the analysis of the sea surface nanolayer will be illustrated. Resulting spectra are interpreted in terms of layer composition and surfactant classes, in particular with respect to carbohydrate-containing molecules such as glycolipids. The partitioning of the detected surfactants into soluble and non-soluble ("wet" and "dry") surfactants will be

  9. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  10. Installation and commissioning of the new Fermi National Accelerator Laboratory H- Magnetron

    SciTech Connect

    Bollinger, D. S.

    2014-02-15

    The Fermi National Accelerator Laboratory (FNAL) 40 year old Cockcroft-Walton 750 keV injectors with slit aperture magnetron ion sources have been replaced with a circular aperture magnetron, Low Energy Beam Transport, Radio Frequency Quadrupole Accelerator, and Medium Energy Beam Transport, as part of the FNAL Proton Improvement Plan. The injector design is based on a similar system at Brookhaven National Laboratory. The installation, commissioning efforts, and source operations to date will be covered in this paper along with plans for additional changes to the original design to improve reliability by reducing extractor spark rates and arc current duty factor.

  11. High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization

    SciTech Connect

    Ehiasarian, A. P.; New, R.; Hecimovic, A.; Arcos, T. de los; Schulz-von der Gathen, V.; Boeke, M.; Winter, J.

    2012-03-12

    We report on instabilities in high power impulse magnetron sputtering plasmas which are likely to be of the generalized drift wave type. They are characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron and cause periodic shifts in floating potential. The azimuthal mode number m depends on plasma current, plasma density, and gas pressure. The structures rotate in E-vectorxB-vector direction at velocities of {approx}10 km s{sup -1} and frequencies up to 200 kHz. Collisions with residual gas atoms slow down the rotating wave, whereas increasing ionization degree of the gas and plasma conductivity speeds it up.

  12. Preparation and characterization of Ba(ZrxTi1-x)O3 thin films for high-frequency applications

    NASA Astrophysics Data System (ADS)

    Woong, Kim Jin; Shima, Hiromi; Yamamoto, Takashi; Yasui, Shintaro; Funakubo, Hiroshi; Yamada, Tomoaki; Nishida, Ken

    2014-09-01

    Ba(ZrxTi1-x)O3 (BZT) thin films were deposited on a (100)MgO substrate by RF-magnetron reactive sputtering using metal targets. In this paper, a model of the reactive sputtering process using a metal composite target at different reactive gas flow rates is presented. 500-nm-thick BZT thin (x = 0.26) films for high frequency performance showed a single perovskite phase and a high crystallinity on the MgO substrate with only a (001)/(100) orientation at an optimum reactive gas flow rate in Ar + O2. The BZT films had a stoichiometric Ba/Ti ratio and epitaxially grew on the MgO substrate. They showed a dense microstructure without cracks or voids. Their low capacitance and loss tangent showed little dispersion at 1-18 GHz. These results indicated that we succeeded in depositing high-quality and potentially tunable ferroelectric BZT films for high-frequency applications by RF-magnetron reactive sputtering using metal targets.

  13. Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

    DOE PAGES

    Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; Varghese, Philip

    2015-03-01

    The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

  14. Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

    SciTech Connect

    Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; Varghese, Philip

    2015-03-01

    The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRF cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.

  15. On Tomonaga's theory of split-anode magnetrons

    NASA Astrophysics Data System (ADS)

    Dittrich, Walter

    2016-06-01

    This article offers a review of the history of radar research and its application in the 20th century. After describing the wartime work of Sin-Itiro Tomonaga and his theory of the cavity magnetron, we formulate the equations of motion of an electron in a cavity magnetron using action-angle variables. This means following the electron's path on its way from a cylindrical cathode moving toward a co-axial cylindrical anode in presence of a uniform magnetic field parallel to the common axis. After analyzing the situation without coupling to an external oscillatory electric field, we employ methods of canonical perturbation theory to find the resonance condition between the frequencies of the free theory ωr, ωϕ and the applied perturbing oscillatory frequency ω. A long-time averaging process will then eliminate the periodic terms in the equation for the now time-dependent action-angle variables. The terms that are no longer periodic will cause secular changes so that the canonical action-angle variables (J, δ) change in a way that the path of the electron will deform gradually so that it can reach the anode. How the ensemble of the initially randomly distributed electrons forms spokes and how their energy is conveyed to the cavity-field oscillation is the main focus of this article. Some remarks concerning the importance of results in QED and the invention of radar theory and application conclude the article.

  16. Tumor- and Neoantigen-Reactive T-cell Receptors Can Be Identified Based on Their Frequency in Fresh Tumor.

    PubMed

    Pasetto, Anna; Gros, Alena; Robbins, Paul F; Deniger, Drew C; Prickett, Todd D; Matus-Nicodemos, Rodrigo; Douek, Daniel C; Howie, Bryan; Robins, Harlan; Parkhurst, Maria R; Gartner, Jared; Trebska-McGowan, Katarzyna; Crystal, Jessica S; Rosenberg, Steven A

    2016-09-01

    Adoptive transfer of T cells with engineered T-cell receptor (TCR) genes that target tumor-specific antigens can mediate cancer regression. Accumulating evidence suggests that the clinical success of many immunotherapies is mediated by T cells targeting mutated neoantigens unique to the patient. We hypothesized that the most frequent TCR clonotypes infiltrating the tumor were reactive against tumor antigens. To test this hypothesis, we developed a multistep strategy that involved TCRB deep sequencing of the CD8(+)PD-1(+) T-cell subset, matching of TCRA-TCRB pairs by pairSEQ and single-cell RT-PCR, followed by testing of the TCRs for tumor-antigen specificity. Analysis of 12 fresh metastatic melanomas revealed that in 11 samples, up to 5 tumor-reactive TCRs were present in the 5 most frequently occurring clonotypes, which included reactivity against neoantigens. These data show the feasibility of developing a rapid, personalized TCR-gene therapy approach that targets the unique set of antigens presented by the autologous tumor without the need to identify their immunologic reactivity. Cancer Immunol Res; 4(9); 734-43. ©2016 AACR. PMID:27354337

  17. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    SciTech Connect

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Gilgenbach, R. M.; Hoff, B. W.

    2015-08-15

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions.

  18. Low frequency sonochemical synthesis of nanoporous amorphous manganese dioxide (MnO{sub 2}) and adsorption of remazol reactive dye

    SciTech Connect

    Hasan, Siti Zubaidah; Yusop, Muhammad Rahimi; Othman, Mohamed Rozali

    2015-09-25

    Nanoporous amorphous-MnO{sub 2} was synthesized by sonochemical process (sonication) on the solid manganese (II) acetate tetrahydrate (Mn(CH{sub 3}COO){sub 2}.4H{sub 2}O) in 0.1 M KMnO{sub 4}. The product was characterized by X-ray diffraction (XRD), morphology of the material was scanned by Field Emission Scanning Electron Microscopy (FE-SEM) and absorptions of MnO{sub 2} bonding was characterized by Fourier Transform Infra-Red Spectrometer (FT-IR). Remazol reactive dye or Red 3BS, was used in the adsorption study using nanoporous amorphous-MnO{sub 2}. In batch experiment, 10 ppm of Remazol reactive dye was used and experiment was carried out at room temperature. Adsorption of Remazol dye on 0.2g synthesized nanoporous amorphous-MnO{sub 2} showed 99 – 100% decolorization.

  19. Analysis of peer-to-peer locking of magnetrons

    SciTech Connect

    Pengvanich, P.; Lau, Y. Y.; Cruz, E.; Gilgenbach, R. M.; Hoff, B.; Luginsland, J. W.

    2008-10-15

    The condition for mutual, or peer-to-peer, locking of two magnetrons is derived. This condition reduces to Adler's classical phase-locking condition in the limit where one magnetron becomes the 'master' and the other becomes the 'slave.' The formulation is extended to the peer-to-peer locking of N magnetrons, under the assumption that the electromagnetic coupling among the N magnetrons is modeled by an N-port network.

  20. High frequency of autoantibodies bearing cross-reactive idiotopes among hybridomas using VH7183 genes prepared from normal and autoimmune murine strains.

    PubMed Central

    Bellon, B; Manheimer-Lory, A; Monestier, M; Moran, T; Dimitriu-Bona, A; Alt, F; Bona, C

    1987-01-01

    Hybridomas obtained by in vitro stimulation with lipopolysaccharides (LPS) of BALB/c, MRL/lpr, and NZB splenocytes were selected for expression of VH7183 by hybridization using slot blotting. Northern blot analysis showed that the majority of hybrids produce a full length message complementary to the VH7183 probe. The frequency of VH7183 hybridomas was significantly higher in NZB mice as compared with BALB/c mice. Using multiple binding assays, 60% of the total antibodies encoded by VH7183 were specific for self-epitopes. Finally, the vast majority express cross-reactive idiotypes borne by autoantibodies of various specificities. Images PMID:3558816

  1. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    SciTech Connect

    Sahu, B. B. Han, Jeon G.; Kim, Hye R.; Ishikawa, K.; Hori, M.

    2015-01-21

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons.

  2. Probe measurements of magnetron discharge parameters

    NASA Astrophysics Data System (ADS)

    Karzin, V.; Smirnov, V.

    2016-07-01

    Langmuir probe measurements have been carried out in a positive column discharge of a planar magnetron with a titanium target. In this work concentration and temperature of electrons is measured in positive column of magnetron discharge with Langmuir probe. Concentration of electrons is found to be on the level of 1016 m-3 at a notable distance (over 200 mm). Two groups of electrons exist: «cold» and «hot» with average temperature of 16 000 and 41 000 K respectively. Dependence of discharge parameters on working gas pressure is measured.

  3. Characterization and optimization of the magnetron directional amplifier

    NASA Astrophysics Data System (ADS)

    Hatfield, Michael Craig

    Many applications of microwave wireless power transmission (WPT) are dependent upon a high-powered electronically-steerable phased array composed of many radiating modules. The phase output from the high-gain amplifier in each module must be accurately controlled if the beam is to be properly steered. A highly reliable, rugged, and inexpensive design is essential for making WPT applications practical. A conventional microwave oven magnetron may be combined with a ferrite circulator and other external circuitry to create such a system. By converting it into a two-port amplifier, the magnetron is capable of delivering at least 30 dB of power gain while remaining phase-locked to the input signal over a wide frequency range. The use of the magnetron in this manner is referred to as a MDA (Magnetron Directional Amplifier). The MDA may be integrated with an inexpensive slotted waveguide array (SWA) antenna to form the Electronically-Steerable Phased Array Module (ESPAM). The ESPAM provides a building block approach to creating phased arrays for WPT. The size and shape of the phased array may be tailored to satisfy a diverse range of applications. This study provided an in depth examination into the capabilities of the MDA/ESPAM. The basic behavior of the MDA was already understood, as well as its potential applicability to WPT. The primary objective of this effort was to quantify how well the MDA could perform in this capacity. Subordinate tasks included characterizing the MDA behavior in terms of its system inputs, optimizing its performance, performing sensitivity analyses, and identifying operating limitations. A secondary portion of this study examined the suitability of the ESPAM in satisfying system requirements for the solar power satellite (SPS). Supporting tasks included an analysis of SPS requirements, modeling of the SWA antenna, and the demonstration of a simplified phased array constructed of ESPAM elements. The MDA/ESPAM is well suited for use as an

  4. Plasma properties of RF magnetron sputtering system using Zn target

    SciTech Connect

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A.

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  5. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  6. Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

    SciTech Connect

    Telling, N. D.; Laan, G. van der; Georgieva, M. T.; Farley, N. R. S.

    2006-07-15

    An ultrahigh vacuum chamber that enables the in situ growth of thin films and multilayers by magnetron sputtering techniques is described. Following film preparation, x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements are performed by utilizing an in vacuum electromagnet. XMCD measurements on sputtered thin films of Fe and Co yield spin and orbital moments that are consistent with those obtained previously on films measured in transmission geometry and grown in situ by evaporation methods. Thin films of FeN prepared by reactive sputtering are also examined and reveal an apparent enhancement in the orbital moment for low N content samples. The advantages of producing samples for in situ XAS and XMCD studies by magnetron sputtering are discussed.

  7. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  8. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    SciTech Connect

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  9. Experimental demonstration of a compact high efficient relativistic magnetron with directly axial radiation

    SciTech Connect

    Li Wei; Liu Yonggui; Shu Ting; Yang Hanwu; Fan Yuwei; Yuan Chengwei; Zhang Jun

    2012-01-15

    A compact relativistic magnetron with axial microwave radiation is experimentally investigated. Under the modified magnetic field distribution, only connecting a special horn antenna in the axial direction, the relativistic magnetron can stably radiate high power and high efficiency microwaves. The total length of the device is {approx}0.3 m, and the volume is {approx}0.014m{sup 3}. In such working condition that the applied voltage is 539 kV and the magnetic field is {approx}0.38 T, the output microwave power is {approx}1.24 GW. Correspondingly, the total efficiency is about 34.1%. The radiating frequency is 2.35GHz, which is in agreement with the {pi} mode frequency of the theoretical expectation.

  10. Semiconducting ZnSn{sub x}Ge{sub 1−x}N{sub 2} alloys prepared by reactive radio-frequency sputtering

    SciTech Connect

    Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S.; Atwater, Harry A.

    2015-07-01

    We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having <10% atomic composition (x = 0.025) of tin. These low-Sn alloys followed the structural and optoelectronic trends of the alloy series. Samples exhibited semiconducting properties, including optical band gaps and increasing in resistivities with temperature. Resistivity vs. temperature measurements indicated that low-Sn alloys were non-degenerately doped, whereas alloys with higher Sn content were degenerately doped. These films show potential for ZnSn{sub x}Ge{sub 1−x}N{sub 2} as tunable semiconductor absorbers for possible use in photovoltaics, light-emitting diodes, or optical sensors.

  11. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    SciTech Connect

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K.; Shaw, Pankaj Kumar; Sekar Iyengar, A. N.

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  12. Magnetron cathodes in plasma electrode pockels cells

    DOEpatents

    Rhodes, Mark A.

    1995-01-01

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating. pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal.

  13. Magnetron cathodes in plasma electrode Pockels cells

    DOEpatents

    Rhodes, M.A.

    1995-04-25

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal. 5 figs.

  14. Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering

    SciTech Connect

    Deniz, D.; Harper, J. M. E.

    2008-09-15

    We studied the development of crystallographic texture in titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature. Texture measurements were performed by x-ray pole figure analysis of the (111) and (200) diffraction peaks. For a deposition angle of 40 deg. from substrate normal, we obtained TiN biaxial textures for a range of deposition conditions using radio frequency (rf) sputtering. Typically, we find that the <111> orientation is close to the substrate normal and the <100> orientation is close to the direction of the deposition source, showing substantial in-plane alignment. We also introduced a 150 eV ion beam at 55 deg. with respect to substrate normal during rf sputtering of TiN. Ion beam enhancement caused TiN to align its out-of-plane texture along <100> orientation. In this case, (200) planes are slightly tilted with respect to the substrate normal away from the ion beam source, and (111) planes are tilted 50 deg. toward the ion beam source. For comparison, we found that HfN deposited at 40 deg. without ion bombardment has a strong <100> orientation parallel to the substrate normal. These results are consistent with momentum transfer among adatoms and ions followed by an increase in surface diffusion of the adatoms on (200) surfaces. The type of fiber texture results from a competition among texture mechanisms related to surface mobilities of adatoms, geometrical, and directional effects.

  15. Elevated C-Reactive Protein Levels and Enhanced High Frequency Vasomotion in Patients with Ischemic Heart Disease during Brachial Flow-Mediated Dilation

    PubMed Central

    Watanabe, Shogo; Amiya, Eisuke; Watanabe, Masafumi; Takata, Munenori; Ozeki, Atsuko; Watanabe, Aya; Kawarasaki, Shuichi; Nakao, Tomoko; Hosoya, Yumiko; Nagata, Kohzo; Nagai, Ryozo; Komuro, Issei

    2014-01-01

    Purpose The physiological role of vasomotion, rhythmic oscillations in vascular tone or diameter, and its underlying mechanisms are unknown. We investigated the characteristics of brachial artery vasomotion in patients with ischemic heart disease (IHD). Methods We performed a retrospective study of 37 patients with IHD. Endothelial function was assessed using flow-mediated dilation (FMD), and power spectral analysis of brachial artery diameter oscillations during FMD was performed. Frequency-domain components were calculated by integrating the power spectrums in three frequency bands (in ms2) using the MemCalc (GMS, Tokyo, Japan): very-low frequency (VLF), 0.003–0.04 Hz; low frequency (LF), 0.04–0.15 Hz; and high frequency (HF), 0.15–0.4 Hz. Total spectral power (TP) was calculated as the sum of all frequency bands, and each spectral component was normalized against TP. Results Data revealed that HF/TP closely correlated with FMD (r = −0.33, p = 0.04), whereas VLF/TP and LF/TP did not. We also explored the relationship between elevated C-reactive protein (CRP) levels and vasomotion. HF/TP was significantly increased in subjects with high CRP levels (CRP;>0.08 mg/dL) compared with subjects with low CRP levels (0.052±0.026 versus 0.035±0.022, p<0.05). The HF/TP value closely correlated with CRP (r = 0.24, p = 0.04), whereas the value of FMD did not (r = 0.023, p = 0.84). In addition, elevated CRP levels significantly increased the value of HF/TP after adjustment for FMD and blood pressure (β = 0.33, p<0.05). Conclusion The HF component of brachial artery diameter oscillation during FMD measurement correlated well with FMD and increased in the presence of elevated CRP levels in subjects with IHD. PMID:25299643

  16. Fuzzy tungsten in a magnetron sputtering device

    NASA Astrophysics Data System (ADS)

    Petty, T. J.; Khan, A.; Heil, T.; Bradley, J. W.

    2016-11-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 1023-3.0 × 1024 m-2, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 1024 m-2, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ1/2 relation as opposed to the incubation fluence fit.

  17. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  18. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  19. Satellite Power System (SPS) magnetron tube assessment study

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1981-01-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  20. Secondary-electrons-induced cathode plasma in a relativistic magnetron

    SciTech Connect

    Queller, T.; Gleizer, J. Z.; Krasik, Ya. E.

    2012-11-19

    Results of time- and space-resolved spectroscopic studies of cathode plasma during a S-band relativistic magnetron operation and a magnetically insulated diode having an identical interelectrode gap are presented. It was shown that in the case of the magnetron operation, one obtains an earlier, more uniform plasma formation due to energetic electrons' interaction with the cathode surface and ionization of desorbed surface monolayers. No differences were detected in the cathode's plasma temperature between the magnetron and the magnetically insulated diode operation, and no anomalous fast cathode plasma expansion was observed in the magnetron at rf power up to 350 MW.

  1. Satellite Power System (SPS) magnetron tube assessment study

    NASA Astrophysics Data System (ADS)

    Brown, W. C.

    1981-02-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  2. Increased frequency of {gamma}{delta} T cells in cerebrospinal fluid and peripheral blood of patients with multiple sclerosis: Reactivity, cytotoxicity, and T cell receptor V gene rearrangements

    SciTech Connect

    Stinissen, P.; Vandevyver, C.; Medaer, R.

    1995-05-01

    Infiltrating {gamma}{delta} T cells are potentially involved in the central nervous system demyelination in multiple sclerosis (MS). To further study this hypothesis, we analyzed the frequency and functional properties of {gamma}{delta} T cells in peripheral blood (PB) and paired cerebrospinal fluid (CSF) of patients with MS and control subjects, including patients with other neurologic diseases (OND) and healthy individuals. The frequency analysis was performed under limiting dilution condition using rIL-2 and PHA. After PHA stimulation, a significantly increased frequency of {gamma}{delta} T cells was observed in PB and in CSF of MS patients as compared with PB and CSF of patients with OND. The frequency was represented equally in OND patients and normal individuals. Similarly, the IL-2-responsive {gamma}{delta} T cells occurred at a higher frequency in PB of MS than of control subjects. Forty-three percent of the {gamma}{delta} T cell clones isolates from PB and CSF of MS patients responded to heat shock protein (HSP70) but not HSP65, whereas only 2 of 30 control {gamma}{delta} T cell clones reacted to the HSP. The majority of the {gamma}{delta} T cell clones were able to induce non-MHC-restricted cytolysis of Daudi cells. All clones displayed a substantial reactivity to bacterial superantigens staphylococcal enterotoxin B and toxic shock syndrome toxin-1, irrespective of their {gamma}{delta} V gene usage. Furthermore, the {gamma}{delta} T cell clones expressed predominantly TCRDV2 and GV2 genes, whereas the clones derived from CSF of MS patients expressed either DV1 or DV2 genes. The obtained {gamma}{delta} clones, in general, represented rather heterogeneous clonal origins, even though a predominant clonal origin was found in a set of 10 {gamma}{delta} clones derived from one patient with MS. The present study provides new evidence supporting a possible role of {gamma}{delta} T cells in the secondary inflammatory processes in MS. 39 refs., 5 figs., 4 tabs.

  3. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  4. In situ stress evolution during magnetron sputtering of transition metal nitride thin films

    SciTech Connect

    Abadias, G.; Guerin, Ph.

    2008-09-15

    Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

  5. Plasma"anti-assistance" and"self-assistance" to high power impulse magnetron sputtering

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-30

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contra-productive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  6. Effects of the transparent cathode on the performance of a relativistic magnetron with axial radiation.

    PubMed

    Li, Wei; Liu, Yong-gui; Zhang, Jun; Shu, Ting; Yang, Han-wu; Fan, Yu-wei; Yuan, Cheng-wei

    2012-02-01

    Experimental investigation of the transparent cathode used in a relativistic magnetron with axial radiation is reported in this paper. The transparent cathode is composed of six separate stalks with the diameter of 6 mm. Under the working condition of 549 kV and ∼0.38 T, the relativistic magnetron with the transparent cathode experimentally produces a 550 MW microwave. The radiation mode is TE(11) at the frequency of 2.35 GHz. The total efficiency is 16.7%. The variations of the relative positions between the separate stalks and the anode blocks can perform the maximum difference of 4 ns in microwave duration. Compared with the conventional solid cathode, the transparent cathode provides faster startup time of 12 ns, relatively wider pulse duration of 35% and relatively higher efficiency of 10.6%.

  7. Particle-In-Cell (PIC) simulation of long-anode magnetron

    NASA Astrophysics Data System (ADS)

    Verma, Rajendra Kumar; Maurya, Shivendra; Singh, Vindhyavasini Prasad

    2016-03-01

    Long Anode Magnetron (LAM) is a design scheme adopted to attain greater thermal stability and higher power levels for the conventional magnetrons. So a LAM for 5MW Power level at 2.858 GHz was `Virtual Prototyped' using Admittance Matching field theory (AMT) andthen a PIC Study (Beam-wave interaction) was conducted using CST Particle Studio (CST-PS) which is explained in this paper. The convincing results thus obtained were - hot resonant frequency of 2.834 GHz. Output power of 5 MW at beam voltage of 58kV and applied magnetic field of 2200 Gauss with an overall efficiency of 45%. The simulated parameters values on comparison with the E2V LAM tube (M5028) were in good agreement which validates the feasibility of the design approach.

  8. Development of a 14-vane, double-strapped, 5.8-GHz magnetron oscillator

    NASA Astrophysics Data System (ADS)

    Choi, Jin Joo; Lee, Han Seoul; Jang, Kwang Ho; Sim, Sung Hun; Choi, Heung Sik

    2016-08-01

    Experiments on a 14-vane, double-strapped magnetron oscillator were performed to demonstrate high-power, high-efficiency coherent radiation at 5.8 GHz. The double-strapped magnetron was designed by using the Buneman-Hatree resonance condition, electromagnetic simulations and non-linear three-dimensional particle-in-cell (PIC) simulations. Experiments showed an oscillation output power of 5.3 kW at 5.79 GHz, corresponding to a DC-RF conversion efficiency of 57%. The cathode voltage was 9.2 kV, the collected anode current was 1 A, and the external magnetic field is 7.5 kG. Experimental results for the RF power, oscillation frequency, and efficiency were in good agreement with the corresponding values from non-linear three-dimensional PIC simulations.

  9. When holding your horses meets the deer in the headlights: time-frequency characteristics of global and selective stopping under conditions of proactive and reactive control

    PubMed Central

    Lavallee, Christina F.; Meemken, Marie T.; Herrmann, Christoph S.; Huster, Rene J.

    2014-01-01

    The ability to inhibit unwanted thoughts or actions is crucial for successful functioning in daily life; however, this ability is often impaired in a number of psychiatric disorders. Despite the relevance of inhibition in everyday situations, current models of inhibition are rather simplistic and provide little generalizability especially in the face of clinical disorders. Thus, given the importance of inhibition for proper cognitive functioning, the need for a paradigm, which incorporates factors that will subsequently improve the current model for understanding inhibition, is of high demand. A popular paradigm used to assess motor inhibition, the stop-signal paradigm, can be modified to further advance the current conceptual model of inhibitory control and thus provide a basis for better understanding different facets of inhibition. Namely, in this study, we have developed a novel version of the stop-signal task to assess how preparation (that is, whether reactive or proactive) and selectivity of the stopping behavior effect well-known time-frequency characteristics associated with successful inhibition and concomitant behavioral measures. With this innovative paradigm, we demonstrate that the selective nature of the stopping task modulates theta and motoric beta activity and we further provide the first account of delta activity as an electrophysiological feature sensitive to both manipulations of selectivity and preparatory control. PMID:25540615

  10. Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

    SciTech Connect

    Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony; Konstantinidis, Stephanos

    2012-07-15

    The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

  11. Influence of reactive gas admixture on transition metal cluster nucleation in a gas aggregation cluster source

    NASA Astrophysics Data System (ADS)

    Peter, Tilo; Polonskyi, Oleksandr; Gojdka, Björn; Mohammad Ahadi, Amir; Strunskus, Thomas; Zaporojtchenko, Vladimir; Biederman, Hynek; Faupel, Franz

    2012-12-01

    We quantitatively assessed the influence of reactive gases on the formation processes of transition metal clusters in a gas aggregation cluster source. A cluster source based on a 2 in. magnetron is used to study the production rate of titanium and cobalt clusters. Argon served as working gas for the DC magnetron discharge, and a small amount of reactive gas (oxygen and nitrogen) is added to promote reactive cluster formation. We found that the cluster production rate depends strongly on the reactive gas concentration for very small amounts of reactive gas (less than 0.1% of total working gas), and no cluster formation takes place in the absence of reactive species. The influence of discharge power, reactive gas concentration, and working gas pressure are investigated using a quartz micro balance in a time resolved manner. The strong influence of reactive gas is explained by a more efficient formation of nucleation seeds for metal-oxide or nitride than for pure metal.

  12. Recirculating Planar Magnetron Modeling and Experiments

    NASA Astrophysics Data System (ADS)

    Franzi, Matthew; Gilgenbach, Ronald; Hoff, Brad; French, Dave; Lau, Y. Y.

    2011-10-01

    We present simulations and initial experimental results of a new class of crossed field device: Recirculating Planar Magnetrons (RPM). Two geometries of RPM are being explored: 1) Dual planar-magnetrons connected by a recirculating section with axial magnetic field and transverse electric field, and 2) Planar cathode and anode-cavity rings with radial magnetic field and axial electric field. These RPMs have numerous advantages for high power microwave generation by virtue of larger area cathodes and anodes. The axial B-field RPM can be configured in either the conventional or inverted (faster startup) configuration. Two and three-dimensional EM PIC simulations show rapid electron spoke formation and microwave oscillation in pi-mode. Smoothbore prototype axial-B RPM experiments are underway using the MELBA accelerator at parameters of -300 kV, 1-20 kA and pulselengths of 0.5-1 microsecond. Implementation and operation of the first RPM slow wave structure, operating at 1GHz, will be discussed. Research supported by AFOSR, AFRL, L-3 Communications, and Northrop Grumman. Done...processed 1830 records...17:52:57 Beginning APS data extraction...17:52:57

  13. Phased Array Technology with Phase and Amplitude Controlled Magnetron for Microwave Power Transmission

    NASA Astrophysics Data System (ADS)

    Shinohara, N.; Matsumoto, H.

    2004-12-01

    We need a microwave power transmitter with light weight and high DC-RF conversion efficiency for an economical SSPS (Space Solar Power System). We need a several g/W for a microwave power transmission (MPT) system with a phased array with 0.0001 degree of beam control accuracy (=tan-1 (100m/36,000km)) and over 80 % of DC-RF conversion efficiency when the weight of the 1GW-class SPS is below a several thousand ton - a several tens of thousand ton. We focus a microwave tube, especially magnetron by economical reason and by the amount of mass-production because it is commonly used for microwave oven in the world. At first, we have developed a phase controlled magnetron (PCM) with different technologies from what Dr. Brown developed. Next we have developed a phase and amplitude controlled magnetron (PACM). For the PACM, we add a feedback to magnetic field of the PCM with an external coil to control and stabilize amplitude of the microwave. We succeed to develop the PACM with below 10-6 of frequency stability and within 1 degree of an error in phase and within 1% of amplitude. We can control a phase and amplitude of the PACM and we have developed a phased array the PCMs. With the PCM technology, we have developed a small light weight MPT transmitter COMET (Compact Microwave Energy Transmitter) with consideration of heat radiation for space use and with consideration of mobility to space.

  14. Deposition and characterization of magnetron sputtered bcc tantalum

    NASA Astrophysics Data System (ADS)

    Patel, Anamika

    The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum

  15. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    SciTech Connect

    Anders, Andre

    2010-07-15

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  16. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  17. Magnetron sputtered WS2; optical and structural analysis

    NASA Astrophysics Data System (ADS)

    Koçak, Y.; Akaltun, Y.; Gür, Emre

    2016-04-01

    Remarkable properties of graphene have renewed interest in inorganic, Transition Metal Dichalgogenits (TMDC) due to unique electronic and optical properties. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as solar cells, transistors, photodetectors and electroluminescent devices in which the graphene is not actively used. So, fabrication and analysis of these films are important for new generation devices. In this work, polycrystalline WS2 films were grown by radio frequency magnetron sputtering (RFMS) on different substrates like n-Si(100), n-Si(111), p-Si(100), glass and fused silica. Structural, morphological, optical and electrical properties were investigated as a function of film thickness and RF power. From XRD analysis, signals from planes of (002), (100), (101), (110), (008) belong to the hegzagonal WS2 were obtained. Raman spectra of the WS2 show that there are two dominant peaks at ~351 cm-1 (in-plane phonon mode) and ~417 cm-1 (out-of-plane phonon mode). XPS analysis of the films has shown that binding energy and the intensity of tungsten 4f shells shifts by depending on the depth of the films which might be due to the wellknown preferential sputtering.

  18. CrAIN film deposited by magnetron sputtering for the inkjet printer head.

    PubMed

    Moon, Seon-Cheol; Kim, Sang Ho

    2014-12-01

    CrAIN film has advantages of stability and multifunctionality over the commercial TaN0.8. This study investigated the characteristics of CrAIN film deposited by radio frequency magnetron sputtering as a function of Al content after deposition heat treatment. With a 600 degrees C heat treatment and 20% Al content, the low temperature coefficient of resistance (-2670.6 ppm/k), high oxidation resistance, and thermal conductivity were acquired. This was found due to the high-density columnar NaCI structure with 20% Al and the recrystallization utilized by heat treatment.

  19. Performance and test results of a regulated magnetron pulser

    SciTech Connect

    Rose, C.R.; Warren, D.S.

    1998-12-31

    This paper describes the test results and performance of a 5.0-kV, 750-mA, regulated current pulser used to drive an Hitachi model 2M130 2,425-MHz magnetron. The magnetron is used to modulate the plasma in a particle accelerator injector. In this application, precise and stable rf power is crucial to extract a stable and accurate particle beam. A 10-kV high-voltage triode vacuum tube with active feedback is used to control the magnetron current and output rf power. The pulse width may be varied from as little as ten microseconds to continuous duty by varying the width of a supplied gate pulse. The output current level can be programmed between 10 and 750 mA. Current regulation and accuracy are better than 1%. The paper discusses the overall performance of the pulser and magnetron including anode current and rf power waveforms, linearity compliance, and vacuum tube performance.

  20. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  1. Ordering of Fine Particles in a Planar Magnetron Plasma

    SciTech Connect

    Hayashi, Y.; Takahashi, K.; Totsuji, H.; Ishihara, O.; Sato, N.; Watanabe, Y.; Adachi, S.

    2008-09-07

    Fine particles injected in a planar magnetron were pushed upward by diffusible plasma, leading to being suspended by the force balance with the gravity and forming three-dimensional structures on the two-dimensional structure formed by particle strings.

  2. Composition-dependent structure of polycrystalline magnetron-sputtered V–Al–C–N hard coatings studied by XRD, XPS, XANES and EXAFS

    PubMed Central

    Krause, Bärbel; Darma, Susan; Kaufholz, Marthe; Mangold, Stefan; Doyle, Stephen; Ulrich, Sven; Leiste, Harald; Stüber, Michael; Baumbach, Tilo

    2013-01-01

    V–Al–C–N hard coatings with high carbon content were deposited by reactive radio-frequency magnetron sputtering using an experimental combinatorial approach, deposition from a segmented sputter target. The composition-dependent coexisting phases within the coating were analysed using the complementary methods of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption near-edge spectroscopy (XANES) and extended X-ray absorption fine-structure spectroscopy (EXAFS). For the analysis of the X-ray absorption near-edge spectra, a new approach for evaluation of the pre-edge peak was developed, taking into account the self-absorption effects in thin films. Within the studied composition range, a mixed face-centred cubic (V,Al)(C,N) phase coexisting with a C–C-containing phase was observed. No indication of hexagonal (V,Al)(N,C) was found. The example of V–Al–C–N demonstrates how important a combination of complementary methods is for the detection of coexisting phases in complex multi-element coatings. PMID:24046506

  3. Practical magnetron sputtering system for the deposition of optical multilayer coatings.

    PubMed

    Dobrowolski, J A; Pekelsky, J R; Pelletier, R; Ranger, M; Sullivan, B T; Waldorf, A J

    1992-07-01

    A magnetron sputtering system is described in which, at any one time, as many as four different 15-cm x 46-cm rectangular planar magnetron targets can be mounted vertically in the deposition chamber. These can be attached to either dc or rf power supplies for direct or reactive deposition of metal, metal oxide, or nitride films. Typical target materials include Ag, Al, C, Mo, Nb, Ni, Si, W, and Zr. Good uniformity can be obtained on stationary substrates, although better results are possible with oscillating substrates. The refractive indices are given for several useful oxide materials. The materials and thicknesses of the individual layers that comprise an optical multilayer system are entered into a computer that subsequently controls the deposition parameters, the substrate motion, and the deposition time. After a relatively simple calibration process, coatings that consist of between 20 and 60 layers can be produced to within an accuracy of 1% or 2%. A wideband optical monitor is available for checking the performance of the multilayer system during its deposition. Several examples of multilayer coatings that were prepared on this equipment are given.

  4. The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Treverrow, B.; Ross, A. E.; Falconer, I. S.; Kondyurin, A.; McCulloch, D. G.; Partridge, J. G.; McKenzie, D. R.; Bilek, M. M. M.

    2015-06-01

    In conventional reactive magnetron sputtering, target poisoning frequently leads to an instability that requires the reactive gas flow rate to be actively regulated to maintain a constant composition of the deposited layers. Here we demonstrate that the pulse length in high power impulse magnetron sputtering (HiPIMS) is important for determining the surface conditions on the target that lead to poisoning. By increasing the pulse length, a smooth transition can be achieved from a poisoned target condition (short pulses) to a quasi-metallic target condition (long pulses). Appropriate selection of pulse length eliminates the need for active regulation, enabling stable reactive magnetron sputter deposition of stoichiometric amorphous hafnium oxide (HfO2) from a Hf target. A model is presented for the reactive HiPIMS process in which the target operates in a partially poisoned mode with a distribution of oxide on its surface that depends on the pulse length.

  5. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  6. Morphology of epitaxial TiN(001) grown by magnetron sputtering

    SciTech Connect

    Karr, B.W.; Petrov, I.; Cahill, D.G.; Greene, J.E.

    1997-03-01

    The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by {ital in situ} scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650{lt}T{lt}750{degree}C using reactive magnetron sputter deposition in pure N{sub 2}. The surface morphology is dominated by growth mounds with an aspect ratio of {approx_equal}0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t{sup {alpha}}, with {alpha}=0.25{plus_minus}0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. {copyright} {ital 1997 American Institute of Physics.}

  7. Two-dimensional spatial survey of the plasma potential and electric field in a pulsed bipolar magnetron discharge

    SciTech Connect

    Vetushka, A.; Karkari, S.K.; Bradley, J.W.

    2004-11-01

    Emissive and Langmuir probe techniques have been used to obtain two-dimensional (2D) spatial maps of the plasma potential V{sub p}, electric field E, and ion trajectories in a pulsed bipolar magnetron discharge. The magnetron was pulsed at a frequency of 100 kHz, with a 50% duty cycle and operated at an argon pressure of 0.74 Pa. The pulse wave form was characterized by three distinct phases: the 'overshoot', 'reverse', and 'on' phases. In the 'on' phase of the pulse, when the cathode voltage is driven to -670 V, the 2D spatial distribution of V{sub p} has a similar form to that in dc magnetron, with significant axial and radial electric fields in the bulk plasma, accelerating ions to the sheath edge above the cathode racetrack region. During the 'overshoot' phase (duration 200 ns), V{sub p} is raised to values greater than +330 V, more than 100 V above the cathode potential, with E pointing away from the target. In the 'reverse' phase V{sub p} has a value of +45 V at all measured positions, 2 V more positive than the target potential. In this phase there is no electric field present in the plasma. In the bulk of the plasma, the results from Langmuir probe and the emissive probe are in good agreement, however, in one particular region of the plasma outside the radius of the cathode, the emissive probe measurements are consistently more positive (up to 45 V in the 'on' time). This discrepancy is discussed in terms of the different frequency response of the probes and their perturbation of the plasma. A simple circuit model of the plasma-probe system has been proposed to explain our results. A brief discussion of the effect of the changing plasma potential distribution on the operation of the magnetron is given.

  8. Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

    NASA Astrophysics Data System (ADS)

    Hecimovic, Ante

    2012-10-01

    High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

  9. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  10. Very low pressure high power impulse triggered magnetron sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  11. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  12. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  13. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  14. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  15. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  16. Reactive arthritis

    PubMed Central

    Hind, C. R. K.

    1982-01-01

    Reactive arthritis is a rare complication of certain infections. The similar features and HLA associations with the seronegative arthropathies have raised the possibility that the latter may be forms of reactive arthritis. This review describes the clinical and epidemiological features, and the recent advances in our understanding of the underlying pathogenesis of reactive arthritis. PMID:7100033

  17. Geometrical Aspects of a Hollow-cathode Magnetron (HCM)

    SciTech Connect

    Cohen, Samuel, A.; Wang, Zhehui

    1998-11-01

    A hollow-cathode magnetron (HCM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS), is operable at substantially lower pressures than its planar-magnetron counterpart. We have studied the dependence of magnetron operational parameters on the inner diameter D and length L of a cylindrical HCS. Only when L is greater than L sub zero, a critical length, is the HCM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic or primary electron transport. At pressures above 1 mTorr, an electron-impact ionization model with Bohm diffusion at a temperature equivalent to one-half the primary electron energy and with an ambipolar constraint can explain the ion-electron pair creation required to sustain the discharge. The critical length L sub zero is determined by the magnetization length of the primary electrons.

  18. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  19. Characterization of high power impulse magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  20. Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Niu, Jian-wen; Ma, Rui-xin; Wang, Yuan-yuan; Li, Shi-na; Cheng, Shi-yao; Liu, Zi-lin

    2014-09-01

    Amorphous indium-gallium-zinc oxide (IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency (RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.

  1. A new solid state extractor pulser for the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S.; Lackey, J.; Larson, J.; Triplett, K.

    2015-10-05

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  2. Bioactive glass thin films deposited by magnetron sputtering technique: The role of working pressure

    NASA Astrophysics Data System (ADS)

    Stan, G. E.; Marcov, D. A.; Pasuk, I.; Miculescu, F.; Pina, S.; Tulyaganov, D. U.; Ferreira, J. M. F.

    2010-09-01

    Bioglass coatings were prepared by radio frequency magnetron sputtering deposition at low temperature (150 °C) onto silicon substrates. The influence of argon pressure values used during deposition (0.2 Pa, 0.3 Pa and 0.4 Pa) on the short-range structure and biomineralization potential of the bioglass coatings was studied. The biomineralization capability was evaluated after 30 days of immersion in simulated body fluid. SEM-EDS, XRD and FTIR measurements were performed. The tests clearly showed strong biomineralization features for the bioglass films. The thickness of the chemically grown hydroxyapatite layers was more than twice greater for the BG films deposited at the highest working pressure, in comparison to those grown on the films obtained at lower working pressures. The paper attempts to explain this experimental fact based on structural and compositional considerations.

  3. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  4. On Both Spatial And Velocity Distribution Of Sputtered Particles In Magnetron Discharge

    NASA Astrophysics Data System (ADS)

    Vitelaru, C.; Pohoata, V.; Tiron, V.; Costin, C.; Popa, G.

    2012-12-01

    The kinetics of the sputtered atoms from the metallic target as well as the time-space distribution of the argon metastable atoms have been investigated for DC and high power pulse magnetron discharge by means of Tunable Diode - Laser Absorption Spectroscopy (TD-LAS) and Tunable Diode - Laser Induced Fluorescence (TD-LIF). The discharge was operated in argon (5-30 mTorr) with two different targets, tungsten and aluminum, for pulses of 1 to 20 μs, at frequencies of 0.2 to 1 kHz. Peak current intensity of ~100 A has been attained at cathode peak voltage of ~1 kV. The mean velocity distribution functions and particle fluxes of the sputtered metal atoms, in parallel and perpendicular direction to the target, have been obtained and compared for DC and pulse mode.

  5. Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kim, Y. S.; Heo, S. B.; Lee, H. M.; Lee, Y. J.; Kim, I. S.; Kang, M. S.; Choi, D. H.; Lee, B. H.; Kim, M. G.; Kim, Daeil

    2012-02-01

    Transparent conductive GZO films were deposited on polycarbonate substrates by electron beam assisted radio frequency (RF) magnetron sputtering and then the influence of electron irradiation on the structural, optical and electrical properties of GZO films was investigated by using X-ray diffractometry, UV-vis spectrophotometry, four point probes, atomic force microscopy and UV photoelectron spectroscopy. Sputtering power was kept constant at 3 W/cm2 during deposition, while electron irradiation energy varied from 450 to 900 eV. Electron irradiated GZO films show larger grain sizes than those of films prepared without electron irradiation, and films irradiated at 900 eV show higher optical transmittance in the visible wavelength region and lower sheet resistance (120 Ω/□) than other films. The work-function is also increased with electron irradiation energy. The highest work-function of 4.4 eV was observed in films that were electron irradiated at 900 eV.

  6. Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

    NASA Astrophysics Data System (ADS)

    Murphy, Neil R.; Sun, Lirong; Grant, John T.; Jones, John G.; Jakubiak, Rachel

    2015-10-01

    Molybdenum oxide films were deposited using modulated pulse power magnetron sputtering (MPPMS) from a molybdenum target in a reactive environment where the flow rate of oxygen was varied from 0 sccm to 2.00 sccm. By varying the amount of reactive oxygen available during deposition, the composition of the films ranged from metallic Mo to fully stoichiometric MoO3, when the molybdenum target became poisoned, due to the formation of a dielectric surface oxide coating. Film compositions were verified using high energy resolution x-ray photoelectron spectroscopy. Target poisoning occurred at an oxygen flow rate of 1.25 sccm and reversed when the flow rate decreased to about 1.00 sccm. MoO3 films deposited via MPPMS had densities of 3.8 g cm-3, 81% of the density of crystalline α-MoO3 as determined by x-ray reflectivity (XRR). In addition, XRR and atomic force microscopy data showed sub-nanometer surface roughness values. From spectroscopic ellipsometry, the measured refractive index of the MoO3 films at 589 nm was 1.97 with extinction coefficient values <0.02 at wavelengths above the measured absorption edge of 506 nm (2.45 eV).

  7. A tomographic technique for the simultaneous imaging of temperature, chemical species, and pressure in reactive flows using absorption spectroscopy with frequency-agile lasers

    SciTech Connect

    Cai, Weiwei; Kaminski, Clemens F.

    2014-01-20

    This paper proposes a technique that can simultaneously retrieve distributions of temperature, concentration of chemical species, and pressure based on broad bandwidth, frequency-agile tomographic absorption spectroscopy. The technique holds particular promise for the study of dynamic combusting flows. A proof-of-concept numerical demonstration is presented, using representative phantoms to model conditions typically prevailing in near-atmospheric or high pressure flames. The simulations reveal both the feasibility of the proposed technique and its robustness. Our calculations indicate precisions of ∼70 K at flame temperatures and ∼0.05 bars at high pressure from reconstructions featuring as much as 5% Gaussian noise in the projections.

  8. Tribological performance of hybrid filtered arc-magnetron coatings - Part I: Coating deposition process and basic coating properties characterization

    SciTech Connect

    Gorokhovsky, Vladimir; Bowman, C.; Gannon, Paul E.; VanVorous, D.; Voevodin, A. A.; Rutkowski, A.; Muratore, C.; Smith, Richard J.; Kayani, Asghar N.; Gelles, David S.; Shutthanandan, V.; Trusov, B. G.

    2006-12-04

    Aircraft propulsion applications require low-friction and wear resistant surfaces that operate under high contact loads in severe environments. Recent research on supertough and low friction nanocomposite coatings produced with hybrid plasma deposition processes was demonstrated to have a high potential for such demanding applications. However, industrially scalable hybrid plasma technologies are needed for their commercial realization. The Large area Filtered Arc Deposition (LAFAD) process provides atomically smooth coatings at high deposition rates over large surface areas. The LAFAD technology allows functionally graded, multilayer, super-lattice and nanocomposite architectures of multi-elemental coatings via electro-magnetic mixing of two plasma flows composed of different metal ion vapors. Further advancement can be realized through a combinatorial process using a hybrid filtered arc-magnetron deposition system. In the present study, multilayer and nanostructured TiCrCN/TiCr +TiBC composite cermet coatings were deposited by the hybrid filtered arc-magnetron process. Filtered plasma streams from arc evaporated Ti and Cr targets, and two unbalanced magnetron sputtered B4C targets, were directed to the substrates in the presence of reactive gases. A multiphase nanocomposite coating architecture was designed to provide the optimal combination of corrosion and wear resistance of advanced steels (Pyrowear 675) used in aerospace bearing and gear applications. Coatings were characterized using SEM/EDS, XPS and RBS for morphology and chemistry, XRD and TEM for structural analyses, wafer curvature and nanoindentation for stress and mechanical properties, and Rockwell and scratch indentions for adhesion. Coating properties were evaluated for a variety of coating architectures. Thermodynamic modeling was used for estimation of phase composition of the top TiBC coating segment. Correlations between coating chemistry, structure and mechanical properties are discussed.

  9. Microwave beamed power technology improvement. [magnetrons and slotted waveguide arrays

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1980-01-01

    The magnetron directional amplifier was tested for (1) phase shift and power output as a function of gain, anode current, and anode voltage, (2) background noise and harmonics in the output, (3) long life potential of the magnetron cathode, and (4) high operational efficiency. Examples of results were an adequate range of current and voltage over which 20 dB of amplification could be obtained, spectral noise density 155 dB below the carrier, 81.7% overall efficiency, and potential cathode life of 50 years in a design for solar power satellite use. A fabrication method was used to fabricate a 64 slot, 30 in square slotted waveguide array module from 0.020 in thick aluminum sheet. The test results on the array are discussed.

  10. Comprehensive computer model for magnetron sputtering. II. Charged particle transport

    SciTech Connect

    Jimenez, Francisco J. Dew, Steven K.; Field, David J.

    2014-11-01

    Discharges for magnetron sputter thin film deposition systems involve complex plasmas that are sensitively dependent on magnetic field configuration and strength, working gas species and pressure, chamber geometry, and discharge power. The authors present a numerical formulation for the general solution of these plasmas as a component of a comprehensive simulation capability for planar magnetron sputtering. This is an extensible, fully three-dimensional model supporting realistic magnetic fields and is self-consistently solvable on a desktop computer. The plasma model features a hybrid approach involving a Monte Carlo treatment of energetic electrons and ions, along with a coupled fluid model for thermalized particles. Validation against a well-known one-dimensional system is presented. Various strategies for improving numerical stability are investigated as is the sensitivity of the solution to various model and process parameters. In particular, the effect of magnetic field, argon gas pressure, and discharge power are studied.

  11. Deposition of copper coatings in a magnetron with liquid target

    SciTech Connect

    Tumarkin, A. V. Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V.

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  12. Characterisation of Mg biodegradable stents produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Elmrabet, N.; Botterill, N.; Grant, D. M.; Brown, P. D.

    2015-10-01

    Novel Mg-minitubes for biodegradable stent applications have been produced using PVD magnetron sputtering. The minitubes were characterised, as a function of annealing temperature, using a combination of SEM/EDS, XRD and hardness testing. The as-deposited minitubes exhibited columnar grain structures with high levels of porosity. Slight alteration to the crystal structure from columnar to equiaxed grain growth was demonstrated at elevated temperature, along with increased material densification, hardness and corrosion resistance.

  13. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  14. Frequency of triggering bacteria in patients with reactive arthritis and undifferentiated oligoarthritis and the relative importance of the tests used for diagnosis

    PubMed Central

    Fendler, C; Laitko, S; Sorensen, H; Gripenberg-Lerche, C; Groh, A; Uksila, J; Granfors, K; Braun, J; Sieper, J

    2001-01-01

    OBJECTIVE—Reactive arthritis (ReA) triggered by Chlamydia trachomatis or enteric bacteria such as yersinia, salmonella, Campylobacter jejuni, or shigella is an important differential diagnosis in patients presenting with the clinical picture of an undifferentiated oligoarthritis (UOA). This study was undertaken to evaluate the best diagnostic approach.
PATIENTS AND METHODS—52 patients with ReA, defined by arthritis and a symptomatic preceding infection of the gut or the urogenital tract, and 74 patients with possible ReA, defined by oligoarthritis without a preceding symptomatic infection and after exclusion of other diagnoses (UOA), were studied. The following diagnostic tests were applied for the identification of the triggering bacterium: for yersinia induced ReA—stool culture, enzyme immunoassay (EIA), and Widal's agglutination test for detection of antibodies to yersinia; for salmonella or campylobacter induced ReA—stool culture, EIA for the detection of antibodies to salmonella and Campylobacter jejuni; for infections with shigella—stool culture; for infections with Chlamydia trachomatis—culture of the urogenital tract, microimmunofluorescence and immunoperoxidase assay for the detection of antibodies to Chlamydia trachomatis.
RESULTS—A causative pathogen was identified in 29/52 (56%) of all patients with ReA. In 17 (52%) of the patients with enteric ReA one of the enteric bacteria was identified: salmonella in 11/33 (33%) and yersinia in 6/33 (18%). Chlamydia trachomatis was the causative pathogen in 12/19 (63%) of the patients with urogenic ReA. In patients with the clinical picture of UOA a specific triggering bacterium was also identified in 35/74 (47%) patients: yersinia in 14/74 (19%), salmonella in 9/74 (12%), and Chlamydia trachomatis in 12/74 (16%).
CONCLUSIONS—Chlamydia trachomatis, yersinia, and salmonella can be identified as the causative pathogen in about 50% of patients with probable or possible ReA if the appropriate

  15. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    SciTech Connect

    Kossoy, Anna E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  16. Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films

    SciTech Connect

    Pamu, D.; Sudheendran, K.; Ghanashyam Krishna, M.; James Raju, K. C.

    2008-03-15

    Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, even at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.

  17. Production Of Multi-magnetron Plasma By Using Polyphase Ac Glow Discharge In An Improved Multi-pole Magnetic Field

    NASA Astrophysics Data System (ADS)

    Matsumoto, Kazunori; Motoki, Kentaro; Miyamoto, Masahiro; Uetani, Yasuhiro

    1998-10-01

    Effects of an improved multi-pole magnetic field on a plasma production generated by a polyphase ac glow discharge with multiple electrodes have been investigated. Conventional configuration of the multi-pole magnetic filed has been modified to suppress plasma losses at both ends of the chamber due to ExB drift motion. The modified multi-pole magnetic field has enabled us to produce a multiple magnetron-plasma at a considerably low pressure less than mTorr. The low temperature plasma has been widely used as the fine processing technology of a dry etching and as the thin film formation technology of a sputtering coating. Large-scale plasmas which can be generated at a low gas-pressure have been desired for more wider dry etching and greater sputter coating. The purpose of this study is to develop a large-scale and low-cost plasma generator by using a polyphase ac power source with the low frequency. In this session, we will present the experimental result as to a multiple magnetron-plasma generated in the modified twenty-four poles magnetic field by using the twenty-four-phase ac power source with the commercial electric power frequency of 60Hz. The ac power is supplied to twenty-four electrodes which are fixed to the water-cooled chamber-wall through sheet insulators so that the electrodes can be cooled indirectly.

  18. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    SciTech Connect

    Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2010-08-15

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle {approx_equal}50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti{sup +},Cu{sup +}) which creates a preionized medium.

  19. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    NASA Astrophysics Data System (ADS)

    Stranak, Vitezslav; Cada, Martin; Hubicka, Zdenek; Tichy, Milan; Hippler, Rainer

    2010-08-01

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≈50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f =100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti+,Cu+) which creates a preionized medium.

  20. Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

    NASA Astrophysics Data System (ADS)

    Wei, Chao‑Tsang; Shieh, Han‑Ping D.

    2006-08-01

    The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

  1. The study of titanium oxynitride coatings solubility deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Leonova, L. A.; Boytsova, E. L.; Pustovalova, A. A.

    2016-06-01

    To improve hemocompatibility of cardiovascular stents the coatings based on titanium oxides and oxynitrides were used. In the present work the morphology, surface properties (wettability and surface energy), and in vitro solubility of the ternary system Ti-N-O coating were investigated. Experimentally, low dissolution rate of the coating in saline NaCl (0,9%) was confirmed. Instrumental methods of quantitative analysis (XRF, AES) revealed that the Ti-N-O coating is chemical-resistant and does not change the qualitative and quantitative composition of body fluids.

  2. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  3. Development of magnetron sputtering simulator with GPU parallel computing

    NASA Astrophysics Data System (ADS)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  4. The Magnetron Method for the Determination of e/m for Electrons: Revisited

    ERIC Educational Resources Information Center

    Azooz, A. A.

    2007-01-01

    Additional information concerning the energy distribution function of electrons in a magnetron diode valve can be extracted. This distribution function is a manifestation of the effect of space charge at the anode. The electron energy distribution function in the magnetron is obtained from studying the variation of the anode current with the…

  5. Closed field magnetron sputtering: new generation sputtering process for optical coatings

    NASA Astrophysics Data System (ADS)

    Gibson, D. R.; Brinkley, I.; Waddell, E. M.; Walls, J. M.

    2008-09-01

    "Closed field" magnetron (CFM) sputtering offers a flexible and high throughput deposition process for optical coatings and thin films. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. Moreover, CFM provides a room temperature deposition process with high ion current density, low bias voltage and reactive oxidation in the entire volume around the rotating substrate drum carrier, thereby producing films over a large surface area at high deposition rate with excellent and reproducible optical properties. Machines based on the Closed Field are scaleable to meet a range of batch and in-line size requirements. Typically, thin film thickness control to <+/-1% is accomplished simply using time, although optical monitoring can be used for more demanding applications. Fine layer thickness control and deposition of graded index layers is also assisted with a specially designed rotating shutter mechanism. This paper presents data on optical properties for CFM deposited optical coatings, including anti-reflection, thermal control filters, graded coatings, narrowband filters as well as conductive transparent oxides such as indium tin oxide and carbide films. Benefits of the CFM sputter process are described.

  6. High-rate deposition of optical coatings by closed-field magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gibson, D. R.; Brinkley, I.; Waddell, E. M.; Walls, J. M.

    2005-09-01

    "Closed field" magnetron (CFM) sputtering offers a flexible and high throughput deposition process for optical coatings and thin films required in a wide range of optical applications. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. Moreover, CFM provides a room temperature deposition process with high ion current density, low bias voltage and reactive oxidation in the entire volume around the rotating substrate drum carrier, thereby producing films over a large surface area at high deposition rate with excellent and reproducible optical properties. Machines based on the Closed Field are scaleable to meet a range of batch and in-line size requirements. Typically, thin film thickness control to <+/-1% is accomplished simply using time. Fine layer thickness control and deposition of graded index layers is also assisted with a specially designed rotating shutter mechanism. The CFM configuration also allows plasma treatment of surfaces prior to deposition, allowing optimisation of coating adhesion to substrates such as plastics. This paper presents data on optical, durability and environmental properties for CFM deposited optical coatings, including anti-reflection, IR blocker and colour control and thermal control filters, graded coatings, as well as conductive transparent oxides such as indium tin oxide. Benefits of the CFM sputter process for a range of optical applications are described.

  7. Deposition of multilayer optical coatings using closed-field magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gibson, D. R.; Brinkley, I.; Hall, G. W.; Waddell, E. M.; Walls, J. M.

    2006-08-01

    "Closed field" magnetron (CFM) sputtering offers a flexible and high throughput deposition process for optical coatings and thin films required in display technologies. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. Moreover, CFM provides a room temperature deposition process with high ion current density, low bias voltage and reactive oxidation in the entire volume around the rotating substrate drum carrier, thereby producing films over a large surface area at high deposition rate with excellent and reproducible optical properties. Machines based on the Closed Field are scaleable to meet a range of batch and in-line size requirements. Typically, thin film thickness control to < +/-1% is accomplished simply using time, although optical monitoring can be used for more demanding applications. Fine layer thickness control and deposition of graded index layers is also assisted with a specially designed rotating shutter mechanism. This paper presents data on optical properties for CFM deposited optical coatings, including anti-reflection, IR blocker and colour control and thermal control filters, graded coatings, narrowband filters as well as conductive transparent oxides such as indium tin oxide. Benefits of the CFM sputter process are described.

  8. Thermal stability and thermo-mechanical properties of magnetron sputtered Cr-Al-Y-N coatings

    SciTech Connect

    Rovere, Florian; Mayrhofer, Paul H.

    2008-01-15

    Cr{sub 1-x}Al{sub x}N coatings are promising candidates for advanced machining and high temperature applications due to their good mechanical and thermal properties. Recently the authors have shown that reactive magnetron sputtering using Cr-Al targets with Al/Cr ratios of 1.5 and Y contents of 0, 2, 4, and 8 at % results in the formation of stoichiometric (Cr{sub 1-x}Al{sub x}){sub 1-y}Y{sub y}N films with Al/Cr ratios of {approx}1.2 and YN mole fractions of 0%, 2%, 4%, and 8%, respectively. Here, the impact of Y on thermal stability, structural evolution, and thermo-mechanical properties is investigated in detail. Based on in situ stress measurements, thermal analyzing, x-ray diffraction, and transmission electron microscopy studies the authors conclude that Y effectively retards diffusional processes such as recovery, precipitation of hcp-AlN and fcc-YN, grain growth, and decomposition induced N{sub 2} release. Hence, the onset temperature of the latter shifts from {approx}1010 to 1125 deg. C and the hardness after annealing at T{sub a}=1100 deg. C increases from {approx}32 to 39 GPa with increasing YN mole fraction from 0% to 8%, respectively.

  9. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    SciTech Connect

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-05-08

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O{sub 2}/H{sub 2}O environment. Ar{sup +} with an average kinetic energy of {approx}5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by {approx}70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H{sub 2} formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.

  10. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Patzig, Christian; Berthold, Lutz; Schrempel, Frank; Füchsel, Kevin; Höche, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2013-07-01

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-12-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres. The preliminary data on the properties of a Au-Cu binary alloy system by SEM and STEM analysis is presented.

  13. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  14. Characterization of Magnetron Sputtered Coatings by Pulsed Eddy Current Techniques

    SciTech Connect

    Mulligan, Chris; Lee Changqing; Danon, Yaron

    2005-04-09

    A method that uses induced pulsed eddy currents for characterization of thick magnetron sputtered Nb coatings on steel is presented in this paper. The objectives of this work are to develop a system for rapid quantitative nondestructive inspection of coatings as well as to determine the correlation between coating properties, such as density and purity, and eddy current measured resistivity of coatings. A two-probe differential system having higher sensitivity and less noise than a one-probe system with 2-D scanning ability was developed.

  15. Hard carbon coatings deposited by pulsed high current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Solov'ev, A. A.; Rabotkin, S. V.

    2014-12-01

    Hard (up to 17 GPa) carbon coatings are deposited onto face SiC bearings used in liquid pumps by pulsed high-current magnetron sputtering of graphite. As a result, the friction coefficient is decreased from 0.43 to 0.11 and the wear rate is decreased from 26 to 0.307 μm3 N-1 m-1, which increases the service life of the bearings by approximately three times. The deposited carbon coatings have a high hardness and wear resistance due to the generation of high-density (up to 1013 cm-3) plasma.

  16. Fabrication and Electrical Characterization of the Si/ZnO/ZnO:Al Structure Deposited by RF-Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Alaya, A.; Djessas, K.; El Mir, L.; Khirouni, K.

    2016-10-01

    The electrical transport properties of the structures of Si(p)/ZnO(i)/ZnO: Al(3%) and Si(p)/PS/ZnO(i)/ZnO: Al(3%) deposited by radio-frequency-magnetron sputtering were investigated and compared by using current-voltage and impedance spectroscopy measurements in a wide temperature range of 80-300 K. Aluminum-doped ZnO is considered to be one of the most important transparent conducting oxide materials due to its high conductivity, good transparency and low cost. From the current-voltage-temperature ( I- V- T) characteristics, it was found that both structures had a good rectifying behavior. This behavior decreases according to the porous silicon layer. The variation of the conductance with frequency indicates the semiconducting behavior and superposition of different conduction mechanisms. The insertion of the porous silicon layer results in a decrease of conductivity, which is attributed to reduced conductivity of defect-rich porous silicon.

  17. First demonstration and performance of an injection locked continuous wave magnetron to phase control a superconducting cavity

    SciTech Connect

    A.C. Dexter, G. Burt, R.G. Carter, I. Tahir, H. Wang, K. Davis, R. Rimmer

    2011-03-01

    The applications of magnetrons to high power proton and cw electron linacs are discussed. An experiment is described where a 2.45 GHz magnetron has been used to drive a single cell superconducting cavity. With the magnetron injection locked, a modest phase control accuracy of 0.95° rms has been demonstrated. Factors limiting performance have been identified.

  18. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface.

  19. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  20. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2011-12-20

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for pulse length of 100 μs at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were taken with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target’s racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic pre-sheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons’ E×B drift velocity, which is about 105 m/s and shows structures in space and time.

  1. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Silze, A.

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  2. The Impact of Accelerated Right Prefrontal High-Frequency Repetitive Transcranial Magnetic Stimulation (rTMS) on Cue-Reactivity: An fMRI Study on Craving in Recently Detoxified Alcohol-Dependent Patients

    PubMed Central

    Herremans, Sarah C.; Van Schuerbeek, Peter; De Raedt, Rudi; Matthys, Frieda; Buyl, Ronald; De Mey, Johan; Baeken, Chris

    2015-01-01

    In alcohol-dependent patients craving is a difficult-to-treat phenomenon. It has been suggested that high-frequency (HF) repetitive transcranial magnetic stimulation (rTMS) may have beneficial effects. However, exactly how this application exerts its effect on the underlying craving neurocircuit is currently unclear. In an effort to induce alcohol craving and to maximize detection of HF-rTMS effects to cue-induced alcohol craving, patients were exposed to a block and event-related alcohol cue-reactivity paradigm while being scanned with fMRI. Hence, we assessed the effect of right dorsolateral prefrontal cortex (DLPFC) stimulation on cue-induced and general alcohol craving, and the related craving neurocircuit. Twenty-six recently detoxified alcohol-dependent patients were included. First, we evaluated the impact of one sham-controlled stimulation session. Second, we examined the effect of accelerated right DLPFC HF-rTMS treatment: here patients received 15 sessions in an open label accelerated design, spread over 4 consecutive days. General craving significantly decreased after 15 active HF-rTMS sessions. However, cue-induced alcohol craving was not altered. Our brain imaging results did not show that the cue-exposure affected the underlying craving neurocircuit after both one and fifteen active HF-rTMS sessions. Yet, brain activation changes after one and 15 HF-rTMS sessions, respectively, were observed in regions associated with the extended reward system and the default mode network, but only during the presentation of the event-related paradigm. Our findings indicate that accelerated HF-rTMS applied to the right DLPFC does not manifestly affect the craving neurocircuit during an alcohol-related cue-exposure, but instead it may influence the attentional network. PMID:26295336

  3. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    SciTech Connect

    Wang, Haipeng; Plawski, Tomasz E.; Rimmer, Robert A.

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  4. What Is Reactive Arthritis?

    MedlinePlus

    ... Arthritis PDF Version Size: 69 KB November 2014 What is Reactive Arthritis? Fast Facts: An Easy-to- ... Information About Reactive Arthritis and Other Related Conditions What Causes Reactive Arthritis? Sometimes, reactive arthritis is set ...

  5. Characterization on RF magnetron sputtered niobium pentoxide thin films

    SciTech Connect

    Usha, N.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Niobium pentoxide (Nb{sub 2}O{sub 5}) thin films with amorphous nature were deposited on microscopic glass substrates at 100°C by rf magnetron sputtering technique. The effect of rf power on the structural, morphological, optical, and vibrational properties of Nb{sub 2}O{sub 5} films have been investigated. Optical study shows the maximum average transmittance of about 87% and the optical energy band gap (indirect allowed) changes between 3.70 eV and 3.47 eV. AFM result indicates the smooth surface nature of the samples. Photoluminescence measurement showed the better optical quality of the deposited films. Raman spectra show the LO-TO splitting of Nb-O stretching of Nb{sub 2}O{sub 5} films.

  6. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  7. Magnetron with flux switching cathode and method of operation

    DOEpatents

    Aaron, D.B.; Wiley, J.D.

    1989-09-12

    A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

  8. Magnetron with flux switching cathode and method of operation

    DOEpatents

    Aaron, David B.; Wiley, John D.

    1989-01-01

    A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

  9. RF magnetron sputtering of thick platinum coatings on glass microspheres

    SciTech Connect

    Meyer, S.F.; Hsieh, E.J.; Burt, R.J.

    1980-05-28

    Thick platinum coatings on glass microspheres are needed for proposed Laser Fusion targets. The spherical nature of these substrates coupled with the small dimensions (approx. 100 ..mu..m OD) make it difficult to achieve a smooth and uniform coating. Coating problems encountered include a rough surface and porous microstructure from the oblique incidence and lack of temperature and bias control, clumping of the microspheres causing non-uniformities, and particle accumulation causing cone defects. Sputtering parameters significantly affecting the coatings include total pressure, DC substrate bias, and the addition of doping gases. Using an ultrasonic vibrating screened cage and RF magnetron Sputtergun, we have successfully batch coated microspheres with up to 6 ..mu..m of Pt, with a surface roughness of 200 nm, thickness non-concentricity of 300 nm, and density greater than 98% of bulk Pt.

  10. Influence of RF power on magnetron sputtered AZO films

    SciTech Connect

    Agarwal, Mohit; Modi, Pankaj; Dusane, R. O.

    2013-02-05

    Al-doped Zinc Oxide (AZO) transparent conducting films are prepared on glass substrate by RF magnetron sputtering under different RF power with a 3 inch diameter target of 2 wt%Al{sub 2}O{sub 3} in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement and UV-Visible spectrophotometry. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance (<90%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 5.7 Multiplication-Sign 10{sup -4}{omega}cm. Such low-resistivity and high-transmittance AZO films when prepared using low RF power at room temperature could find important applications in flexible electronics.

  11. Magnetic properties and high frequency characteristics of FeCoN thin films

    NASA Astrophysics Data System (ADS)

    Hwang, Tae-Jong; Lee, Joonsik; Kim, Ki Hyeon; Kim, Dong Ho

    2016-05-01

    (Fe65Co35)N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2). A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1˜2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR) signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  12. Tribological properties of metal doped a-C film by RF magnetron sputtering method

    SciTech Connect

    Park, Yong Seob; Jung, Tae-Hwan; Lim, Dong-Gun; Park, Young; Kim, Hyungchul; Choi, Won Seok

    2012-10-15

    We deposited various metal doped amorphous carbon (a-C:Me) films by radio frequency (RF) magnetron co-sputtering method. Tungsten (W), molybdenum (Mo), and chromium (Cr) were used as the doping metals in a-C film. The applied power on carbon and metal (W, Mo, and Cr) target were 150 W and 40 W, respectively. a-C:Me films exhibited smooth and uniform surface roughness and the hardness over 15 GPa. Specially, a-C:W film showed the maximum hardness of 18.5 GPa. The coefficient of friction of a-C:W film is relatively lower than that of other films and the critical load value of a-C:W film is higher. These results are related to the concentration of metal in the carbon matrix by the difference of sputtering yield and the change of the structure by the metal bonding. Consequently, W metal is good candidate as the doping metal for the improvement of tribological characteristics.

  13. Optical properties of amorphous silicon thin films fabricated by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Liu, Benfeng; Zhao, Qingnan; Zheng, Pan

    2008-12-01

    Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by radio frequency magnetron sputtering. The effects of hydrogen pressure, substrate temperature and sputtering power on deposition rate of a-Si:H thin films and optical characteristics have been investigated. The films are studied by ultraviolet-visible spectrophotometer and NKD7000w thin film analysis system. The results show that the hydrogen pressure, substrate temperature and sputtering power will affect the deposition rate respectively; The refractive index, extinctive index and optical bandgap of hydrogenated silicon thin films vary regularly with the change of one of the deposition parameters. The optical bandgap, absorption coefficient and extinctive index of the films are evaluated. The absorption coefficient values range from 1.1×104cm-1 to 8.3×104cm-1 and the corresponding extinctive index vary from 0.23 to 0.35 at the wavelength of 400nm, and the optical bandgap of a-Si:H vary from 1.77 to 1.89eV.

  14. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    SciTech Connect

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe; Feng, Feng Lu, Hongyuan; Qu, Timing; Zhu, Yuping; Huang, Rongxia

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  15. Three-Dimensional, Fibrous Lithium Iron Phosphate Structures Deposited by Magnetron Sputtering.

    PubMed

    Bünting, Aiko; Uhlenbruck, Sven; Sebold, Doris; Buchkremer, H P; Vaßen, R

    2015-10-14

    Crystalline, three-dimensional (3D) structured lithium iron phosphate (LiFePO4) thin films with additional carbon are fabricated by a radio frequency (RF) magnetron-sputtering process in a single step. The 3D structured thin films are obtained at deposition temperatures of 600 °C and deposition times longer than 60 min by using a conventional sputtering setup. In contrast to glancing angle deposition (GLAD) techniques, no tilting of the substrate is required. Thin films are characterized by X-ray diffraction (XRD), Raman spectrospcopy, scanning electron microscopy (SEM), cyclic voltammetry (CV), and galvanostatic charging and discharging. The structured LiFePO4+C thin films consist of fibers that grow perpendicular to the substrate surface. The fibers have diameters up to 500 nm and crystallize in the desired olivine structure. The 3D structured thin films have superior electrochemical properties compared with dense two-dimensional (2D) LiFePO4 thin films and are, hence, very promising for application in 3D microbatteries.

  16. Photoluminescenceof magnetron sputtered CdTe films: dependence on target purity, substrate, and annealing conditions

    NASA Astrophysics Data System (ADS)

    Hinko, Kathleen

    2002-03-01

    We have altered several parameters relating to the CdTe layer in CdTe-based solar cells and have analyzed the effects of these changes on low-temperature photoluminescence (PL). Polycrystalline CdTe films were grown by radio frequency magnetron sputtering from two targets purchased from commercial vendors and one pressed at the University of Toledo (UT). We observed substantial differences related to the targets and to the soda lime and borosilicate glass substrates. Parts of each film were annealed at 387 C and 400 C in the presence of CdCl2. The intensity and the spectrum of the PL suggest that films grown from the homemade UT target were of comparable quality to those grown from the commercial target. We found much weaker PL for films grown on borosilicate glass than for soda-lime glass. This may indicate that sodium from the soda-lime glass may leach into the films producing a shallow donor and enhancing the donor-acceptor pair luminescence. Work supported by NREL and NSF.

  17. Growth of TiO{sub 2} Thin Film on Various Substrates using RF Magnetron Sputtering

    SciTech Connect

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-03-30

    The conductivity of Titanium Dioxide (TiO{sub 2}) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO{sub 2} was deposited using Ti target in Ar+O{sub 2}(45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10{sup -7} to 1.54x10{sup -6{Omega}}.m, Si substrate range is between 3.52x10{sup -6} to 1.76x10{sup -5{Omega}}.m and M substrate range is between 99 to 332 {Omega}.m. The value of resistivity increases with the thickness of the thin film.

  18. Superior biofunctionality of dental implant fixtures uniformly coated with durable bioglass films by magnetron sputtering.

    PubMed

    Popa, A C; Stan, G E; Enculescu, M; Tanase, C; Tulyaganov, D U; Ferreira, J M F

    2015-11-01

    Bioactive glasses are currently considered the suitable candidates to stir the quest for a new generation of osseous implants with superior biological/functional performance. In congruence with this vision, this contribution aims to introduce a reliable technological recipe for coating fairly complex 3D-shaped implants (e.g. dental screws) with uniform and mechanical resistant bioactive glass films by the radio-frequency magnetron sputtering method. The mechanical reliability of the bioactive glass films applied to real Ti dental implant fixtures has been evaluated by a procedure comprised of "cold" implantation in pig mandibular bone from a dead animal, followed by immediate tension-free extraction tests. The effects of the complex mechanical strains occurring during implantation were analysed by scanning electron microscopy coupled with electron dispersive spectroscopy. Extensive biocompatibility assays (MTS, immunofluorescence, Western blot) revealed that the bioactive glass films stimulated strong cellular adhesion and proliferation of human dental pulp stem cells, without promoting their differentiation. The ability of the implant coatings to conserve a healthy stem cell pool is promising to further endorse the fabrication of new osseointegration implant designs with extended lifetime.

  19. Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

    NASA Astrophysics Data System (ADS)

    Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

    2016-01-01

    As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10-xAgx(PO4)6(OH)2-x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

  20. Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

    PubMed Central

    2012-01-01

    Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se2 solar cells. PMID:22221917

  1. Ion dynamics in a DC magnetron microdischarge measured with laser-induced fluorescence

    NASA Astrophysics Data System (ADS)

    Young, Christopher; Gascon, Nicolas; Lucca Fabris, Andrea; Ito, Tsuyohito; Cappelli, Mark

    2015-11-01

    We present evidence of coherent rotating azimuthal wave structures in a planar DC magnetron microdischarge operated with argon and xenon. The dominant stable mode structure varies with discharge voltage, and high frame rate camera imaging of plasma emission reveals propagating azimuthal waves in the negative E-> × B-> direction. This negative drift direction is attributed to a local field reversal arising from strong density gradients that drive excess ions towards the anode. Observed mode transitions are shown to be consistent with models of gradient drift-wave dispersion in such a field reversal when the fluid representation includes ambipolar diffusion parallel to the magnetic field direction. Time-averaged and time-resolved laser-induced fluorescence measurements interrogate xenon ion dynamics under the action of the field reversal. Time resolution is obtained by synchronizing with the coherent azimuthal wave frequency at fixed mode number. This work is sponsored by the U.S. Air Force Office of Scientific Research with Dr. Mitat Birkan as program manager. C.Y. acknowledges support from the DOE NNSA Stewardship Science Graduate Fellowship under Contract DE-FC52-08NA28752.

  2. Process characteristics and film properties upon growth of TiOx films by high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sarakinos, K.; Alami, J.; Wuttig, M.

    2007-04-01

    In this work TiOx (x > 1.8) films are grown reactively from a ceramic TiO1.8 target employing high power pulsed magnetron sputtering (HPPMS) at a constant average target current. The effect of the pulse on/off time configuration on the target and the discharge characteristics as well as on the film properties is investigated. The target voltage (VT) increases from 480 to 650 V and the peak target current (ITp) increases from 2 to 40 A when the pulse off-time is increased from 200 to 2450 µs, while the on-time is kept constant at 50 µs. This is accompanied by an increase in the number of Ti atoms sputtered from the target, as manifested by time-resolved optical emission spectroscopy (OES) measurements. OES also manifests an increase in the ionization of the sputtered Ti atoms with increasing ITp. The above changes in the target and discharge characteristics affect the deposition rate so that the latter increases with increasing ITp up to a value of 14 A, above which the deposition rate drops. In all the cases the deposition rates are up to ~40% higher compared to the rates achieved for films grown by dc magnetron sputtering (dcMS) which are also studied for reference. The increase in ITp from 2 to 40 A also affects the films' properties. It is shown that a drop in the surface roughness from 1.1 to 0.5 nm takes place. These values are lower than the surface roughness of films grown by dcMS (1.35 nm). Moreover, films grown by HPPMS are found to have higher densities (up to 3.83 g cm-3) and higher refractive indices (up to 2.48) in comparison to the films grown by dcMS (3.71 g cm-3 and 2.38, respectively).

  3. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.

  4. Physical Properties of Silver Oxide Thin Film Prepared by DC Magnetron Sputtering: Effect of Oxygen Partial Pressure During Growth

    NASA Astrophysics Data System (ADS)

    Entezar Mehdi, Hamid; Hantehzadeh, M. R.; Valedbagi, Sh.

    2013-02-01

    In this paper the physical properties of silver oxide thin film have been prepared on BK7 substrate at room temperature by reactive DC magnetron sputtering technique using pure silver metal target by varying oxygen partial pressure during growth at reported. The reactive sputter gas was a mixture of Ar (99.999%) and N2 (99.999%) with the different ratio Ar and N2 by volume at the constant pressure of the growth chamber. The X-ray diffraction measurements showed that by increasing O2 volume during the Growth, change in crystalline structure will occur. The Atomic Force Microscope images shown by increasing O2 volume, the RMS roughness decreasing consistently. The thickness of the thin films decreases (from 353 to 230 nm) with increasing oxygen partial pressure in chamber. The reflectivity of thin films was investigated with a spectrophotometer system, and the surface reflectivity measurements indicate that by increasing O2 volume growth, the optical properties of the films changes.

  5. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    SciTech Connect

    Qian, J. C.; Jha, S. K. E-mail: apwjzh@cityu.edu.hk; Wang, B. Q.; Jelenković, E. V.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.; Zhang, W. J. E-mail: apwjzh@cityu.edu.hk

    2014-11-10

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

  6. Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prater, W. L.; Allen, E. L.; Lee, W.-Y.; Toney, M. F.; Kellock, A.; Daniels, J. S.; Hedstrom, J. A.; Harrell, T.

    2005-05-01

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  7. Magnetron sputtering as a method of thin-film catalyst development for electrochemical sensors

    NASA Astrophysics Data System (ADS)

    Medvedeva, E. A.

    2016-07-01

    The aim of this work was to develop a thin-film Pt/C catalyst on the fluoroplastic substrates by means of the magnetron sputtering method in order to use as reference and working electrodes of electrochemical cells.

  8. The behaviour of negative oxygen ions in the afterglow of a reactive HiPIMS discharge

    NASA Astrophysics Data System (ADS)

    Bowes, M.; Bradley, J. W.

    2014-07-01

    Using a single Langmuir probe, the temporal evolution of the oxygen negative ion, n-, and electron, ne, densities in the afterglow of a reactive HiPIMS discharge operating in argon-oxygen gas mixtures have been determined. The magnetron was equipped with a titanium target and operated in ‘poisoned’ mode at a frequency of 100 Hz with a pulse width of 100 µs for a range of oxygen partial pressures, {p_{O_{2}}}/{p_{total}} = 0.0{{-}}0.5 . In the initial afterglow, the density of the principle negative ion in the discharge (O-) was of the order of 1016 m-3 for all conditions. The O- concentration was found to decay slowly with characteristic decay times between 585 µs and 1.2 ms over the oxygen partial pressure range. Electron densities were observed to fall more rapidly, resulting in long-lived highly electronegative afterglow plasmas where the ratio, α = n-/ne, was found to reach values up to 672 (±100) for the highest O2 partial pressure. By comparing results to a simple plasma-chemical model, we speculate that with increased {p_{O_{2}}}/{p_{total}} ratio, more O- ions are formed in the afterglow via dissociative electron attachment to highly excited metastable oxygen molecules, with the latter being formed during the active phase of the discharge. After approximately 2.5 ms into the off-time, the afterglow degenerates into an ion-ion plasma and negative ions are free to impinge upon the chamber walls and grounded substrates with flux densities of the order of 1018 m-2 s-1, which is around 10% of the positive ion flux measured during the on-time. This illustrates the potential importance of the long afterglow in reactive HiPIMS, which can act as a steady source of low energy O- ions to a growing thin film at the substrate during periods of reduced positive ion bombardment.

  9. Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

    SciTech Connect

    Motyka, M. A.; Horn, M. W.; Gauntt, B. D.; Dickey, E. C.; Podraza, N. J.

    2012-11-01

    Vanadium oxide (VO{sub x}) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 {+-} 6 and 2901 {+-} 30 A thick, which were then optically and electrically characterized. The complex dielectric function spectra ({epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2}) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VO{sub x} samples. Significant changes in {epsilon} and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 A of the top surface of the deposited film to become more electrically resistive as evidenced by variations in {epsilon}. Exposure of the VO{sub x} thin film to atmospheric conditions introduces a similar change in {epsilon}, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VO{sub x} films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

  10. Radio-frequency magnetron triode sputtering of cadmium telluride and zinc telluride films and solar cells

    NASA Astrophysics Data System (ADS)

    Sanford, Adam Lee

    The n-CdS/p-CdTe solar cell has been researched for many years now. Research groups use a variety of processes to fabricate thin-film CdS/CdTe cells, including physical vapor deposition, chemical vapor deposition, and RF diode sputtering. One of the central areas of investigation concerning CdS/CdTe cells is the problem of a Schottky barrier at the back contact. Even cells fabricated with ohmic back contacts degrade into Schottky barriers as the devices are used. This severely degrades power generation. One possible solution is to use p+-ZnTe as an interlayer between CdTe and the back contact. ZnTe is easily doped with Cu to be p-type. However, even contacts with this ZnTe interlayer degrade over time, because Cu is highly mobile and diffuses away from the contact towards the CdS/CdTe junction. Another possibility is to dope ZnTe with N. It has been demonstrated using molecular beam epitaxy and RF diode sputtering. In this study, CdTe films are fabricated using a variation of RF diode sputtering called triode sputtering. This technique allows for control of ion bombardment to the substrate during deposition. Also, a higher plasma density near the target is achieved allowing depositions at lower pressures. These films are characterized structurally to show the effects of the various deposition parameters. N-doped ZnTe films are also fabricated using this technique. These films are characterized electrically to show the effects of the various deposition parameters. Also, the effects of post-deposition annealing are observed. It is found that annealing at the right temperature can increase the conductivity of the films by a factor of 3 or more. However, annealing at higher temperatures decreases the conductivity to as low as 12% of the initial conductivity. Finally, RF triode sputtered N-doped ZnTe films are used as an interlayer at the back contact of a CdS/CdTe solar cell. The effects of annealing the device before and after contact deposition are observed. Annealing before depositing contacts results in an increase in Voc of 20mV. Annealing after contact deposition results in a degradation of fill factor over time.

  11. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    SciTech Connect

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  12. The 'reactive

    NASA Astrophysics Data System (ADS)

    Battista Piccardo, Giovanni; Guarnieri, Luisa

    2010-05-01

    The Ligurian ophiolitic peridotites [South Lanzo, Erro-Tobbio, Internal Ligurides and Corsica] are characterized by the abundance of spinel(Sp) peridotites showing depleted compositions and ranging from Cpx-poor Sp lherzolites to Sp harzburgites. They were recognized in the last decades as refractory residua by MORB-forming partial melting of the asthenosphere, and were similar to abyssal peridotites. Recent structural and compositional studies promoted a better understanding of their structural and compositional features and their genetic processes. In the field these depleted peridotites replace with primary contacts pyroxenite-bearing fertile Sp lherzolites that have been recognized as sub-continental lithospheric mantle. Field relationships evidence that decametric-hectometric bodies of pristine pyroxenite-veined lithospheric Sp lherzolites are preserved as structural remnants within the km-scale masses of depleted peridotites. The depleted peridotites show coarse-grained recrystallized textures and reaction micro-structures indicating pyroxene dissolution and olivine precipitation that have been considered as records of melt/peridotite interaction during reactive diffuse porous flow of undersaturated melts. They show, moreover, contrasting bulk and mineral chemistries that cannot be produced by simple partial melting and melt extraction. In particular, their bulk compositions are depleted in SiO2 and enriched in FeO with respect to refractory residua after any kind of partial melting, as calculated by Niu (1997), indicating that they cannot be formed by simple partial melting and melt extraction processes. Moreover, TiO2 content in Sp is usually significantly higher (up to 0.8-1.0 wt%) than typical TiO2 contents of spinels (usually < 0.1-0.2 wt %) in fertile mantle peridotites and melting refractory residua, indicating that spinel attained element equilibration with a Ti-bearing basaltic melt. The depleted peridotites usually show strongly variable Cpx modal

  13. Tribological development of TiCN coatings by adjusting the flowing rate of reactive gases

    NASA Astrophysics Data System (ADS)

    Tillmann, Wolfgang; Momeni, Soroush

    2016-03-01

    TiCN coatings were deposited by means of direct current magnetron sputtering of Ti targets in presence of N2 and C2H2 reactive gases. The microstructure, composition, mechanical and tribological properties of the deposited thin films were analyzed by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), nanoindentation, ball-on-disc, scratch test, and three dimensional (3D) optical microscopy. The obtained results presents a reproducible processing route for tailoring microstructure, mechanical and tribological behavior of TiCN coatings by controlling flowing rate of the reactive gases.

  14. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    SciTech Connect

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  15. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    NASA Astrophysics Data System (ADS)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

  16. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO{sub 2} thin films during growth at low temperatures

    SciTech Connect

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

    2012-03-01

    Growth of amorphous SiO{sub 2} thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O{sup -} ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO{sub 2} thin films by magnetron sputtering at low temperatures, controlled by the amount of O{sub 2} in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  17. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  18. Electron transport in magnetrons by a posteriori Monte Carlo simulations

    NASA Astrophysics Data System (ADS)

    Costin, C.; Minea, T. M.; Popa, G.

    2014-02-01

    Electron transport across magnetic barriers is crucial in all magnetized plasmas. It governs not only the plasma parameters in the volume, but also the fluxes of charged particles towards the electrodes and walls. It is particularly important in high-power impulse magnetron sputtering (HiPIMS) reactors, influencing the quality of the deposited thin films, since this type of discharge is characterized by an increased ionization fraction of the sputtered material. Transport coefficients of electron clouds released both from the cathode and from several locations in the discharge volume are calculated for a HiPIMS discharge with pre-ionization operated in argon at 0.67 Pa and for very short pulses (few µs) using the a posteriori Monte Carlo simulation technique. For this type of discharge electron transport is characterized by strong temporal and spatial dependence. Both drift velocity and diffusion coefficient depend on the releasing position of the electron cloud. They exhibit minimum values at the centre of the race-track for the secondary electrons released from the cathode. The diffusion coefficient of the same electrons increases from 2 to 4 times when the cathode voltage is doubled, in the first 1.5 µs of the pulse. These parameters are discussed with respect to empirical Bohm diffusion.

  19. The bioactivity mechanism of magnetron sputtered bioglass thin films

    NASA Astrophysics Data System (ADS)

    Berbecaru, C.; Stan, G. E.; Pina, S.; Tulyaganov, D. U.; Ferreira, J. M. F.

    2012-10-01

    Smooth and adherent bioactive coatings with ∼0.5 μm thickness were deposited onto Si substrates by the radiofrequency-magnetron sputtering method at 150 °C under 0.4 Pa of Ar atmosphere using a bioglass powder as target with a composition in the SiO2-CaO-MgO-P2O5-CaF2-B2O3-Na2O system. The bioactivity of the as-prepared bioglass samples was assessed by immersion in simulated body fluid for different periods of time up to 30 days. Grazing incidence X-ray diffraction, Fourier transform infra-red spectrometry and energy dispersive spectroscopy revealed that important structural and compositional changes took place upon immersing the samples in SBF. Whilst the excellent biomineralisation capability of the BG thin films was demonstrated by the in vitro induction of extensive and homogenous crystalline hydroxyapatite in-growths on their surfaces, a series of bioactivity process kinetics peculiarities (derogations from the classical model) were emphasised and thoroughly discussed.

  20. A bulk plasma model for dc and HiPIMS magnetrons

    NASA Astrophysics Data System (ADS)

    Brenning, N.; Axnäs, I.; Raadu, M. A.; Lundin, D.; Helmerson, U.

    2008-11-01

    A plasma discharge model has been developed for the bulk plasma (also called the extended presheath) in sputtering magnetrons. It can be used both for high power impulse magnetron sputtering (HiPIMS) and conventional dc sputtering magnetrons. Demonstration calculations are made for the parameters of the HiPIMS sputtering magnetron at Linköping University, and also benchmarked against results in the literature on dc magnetrons. New insight is obtained regarding the structure and time development of the currents, the electric fields and the potential profiles. The transverse resistivity ηbottom has been identified as having fundamental importance both for the potential profiles and for the motion of ionized target material through the bulk plasma. New findings are that in the HiPIMS mode, as a consequence of a high value of ηbottom, (1) there can be an electric field reversal that in our case extends 0.01-0.04 m from the target, (2) the electric field in the bulk plasma is typically an order of magnitude weaker than in dc magnetrons, (3) in the region of electric field reversal the azimuthal current is diamagnetic in nature, i.e. mainly driven by the electron pressure gradient, and actually somewhat reduced by the electron Hall current which here has a reversed direction and (4) the azimuthal current above the racetrack can, through resistive friction, significantly influence the motion of the ionized fraction of the sputtered material and deflect it sideways, away from the target and towards the walls of the magnetron.

  1. Correlation of photothermal conversion on the photo-induced deformation of amorphous carbon nitride films prepared by reactive sputtering

    SciTech Connect

    Harata, T.; Aono, M. Kitazawa, N.; Watanabe, Y.

    2014-08-04

    The photo-induced deformation of hydrogen-free amorphous carbon nitride (a-CN{sub x}) films was investigated under visible-light illumination. The films gave rise to photothermal conversion by irradiation. In this study, we investigated the effects of thermal energy generated by irradiation on the deformation of a-CN{sub x}/ultrathin substrate bimorph specimens. The films were prepared on both ultrathin Si and SiO{sub 2} substrates by reactive radio-frequency magnetron sputtering from a graphite target in the presence of pure nitrogen gas. The temperature of the film on the SiO{sub 2} substrate increased as the optical band-gap of the a-CN{sub x} was decreased. For the film on Si, the temperature remained constant. The deformation degree of the films on Si and SiO{sub 2} substrates were approximately the same. Thus, the deformation of a-CN{sub x} films primarily induced by photon energy directly.

  2. Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

    SciTech Connect

    Ouyang, Pan; Zhang, Hong; Chen, Wenhao; Wang, Ying; Zhang, Yu; Li, Zhicheng

    2015-01-15

    Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.

  3. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  4. Hybrid biocomposite with a tunable antibacterial activity and bioactivity based on RF magnetron sputter deposited coating and silver nanoparticles

    NASA Astrophysics Data System (ADS)

    Ivanova, A. A.; Surmenev, R. A.; Surmeneva, M. A.; Mukhametkaliyev, T.; Loza, K.; Prymak, O.; Epple, M.

    2015-02-01

    In this work, we describe fabrication techniques used to prepare a multifunctional biocomposite based on a hydroxyapatite (HA) coating and silver nanoparticles (AgNPs). AgNPs synthesized by a wet chemical reduction method were deposited on Ti substrates using a dripping/drying method followed by deposition of calcium phosphate (CaP) coating via radio-frequency (RF) magnetron sputter-deposition. The negatively charged silver nanoparticles (zeta potential -21 mV) have a spherical shape with a metallic core diameter of 50 ± 20 nm. The HA coating was deposited as a dense nanocrystalline film over a surface of AgNPs. The RF-magnetron sputter deposition of HA films on the AgNPs layer did not affect the initial content of AgNPs on the substrate surface as well as NPs size and shape. SEM cross-sectional images taken using the backscattering mode revealed a homogeneous layer of AgNPs under the CaP layer. The diffraction patterns from the coatings revealed reflexes of crystalline HA and silver. The concentration of Ag ions released from the biocomposites after 7 days of immersion in phosphate and acetate buffers was estimated. The obtained results revealed that the amount of silver in the solutions was 0.27 ± 0.02 μg mL-1 and 0.54 ± 0.02 μg mL-1 for the phosphate and acetate buffers, respectively, which corresponded well with the minimum inhibitory concentration range known for silver ions in literature. Thus, this work establishes a new route to prepare a biocompatible layer using embedded AgNPs to achieve a local antibacterial effect.

  5. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    NASA Astrophysics Data System (ADS)

    Fortier, Jean-Philippe

    objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the

  6. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  7. Surface modification of tantalum pentoxide coatings deposited by magnetron sputtering and correlation with cell adhesion and proliferation in in vitro tests

    NASA Astrophysics Data System (ADS)

    Zykova, A.; Safonov, V.; Goltsev, A.; Dubrava, T.; Rossokha, I.; Donkov, N.; Yakovin, S.; Kolesnikov, D.; Goncharov, I.; Georgieva, V.

    2016-03-01

    The effect was analyzed of surface treatment by argon ions on the surface properties of tantalum pentoxide coatings deposited by reactive magnetron sputtering. The structural parameters of the as-deposited coatings were investigated by means of transmission electron microscopy, atomic force microscopy and scanning electron microscopy. X-ray diffraction profiles and X-ray photoelectron spectra were also acquired. The total surface free energy (SFE), the polar, dispersion parts and fractional polarities, were estimated by the Owens-Wendt-Rabel-Kaeble method. The adhesive and proliferative potentials of bone marrow cells were evaluated for both Ta2O5 coatings and Ta2O5 coatings deposited by simultaneous bombardment by argon ions in in vitro tests.

  8. IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Canto, C. E.; Andrade, E.; de Lucio, O.; Cruz, J.; Solís, C.; Rocha, M. F.; Alemón, B.; Flores, M.; Huegel, J. C.

    2016-03-01

    The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

  9. Physical Properties of Titanium Oxide Thin Films Prepared by DC Magnetron Sputtering: Influence Substrate Temperature and O2/Ar in the Gas Mixture

    NASA Astrophysics Data System (ADS)

    Hantehzadeh, M. R.; Amouha, M. Amou; Solaymani, S.; Osati, T.; Ghobadi, B.

    2013-08-01

    Titanium oxide thin film compounds were grown on p-type Si (100) and BK7 glass as substrate using reactive DC magnetron sputtering. The effect of temperature growth on structural, optical and morphological properties was investigated. By means of X-ray diffraction (XRD) the phase composition was characterized. UV-Vis-NIR spectroscopy was used for reflection and transmission measurements of deposited thin film layers. Atomic force microscopy was used to evaluate and compute the surface roughness changes for different temperatures growth. The XRD results show that the temperature growth effects on the phase formation and structure. Increasing the substrate growth temperature would result in change of film thickness due to different phase and structure formation. The calculated band gap from optical measurements of the thin films shows a decrease at higher substrate temperature growth.

  10. OPTICAL PROPERTIES OF N-DOPED Cu2O THIN FILMS DEPOSITED BY RF-MAGNETRON SPUTTERING Cu2O TARGET

    NASA Astrophysics Data System (ADS)

    Lai, Guozhong; Wu, Yangwei; Lin, Limei; Qu, Yan; Lai, Fachun

    2014-05-01

    N-doped Cu2O films were deposited on quartz substrates by reactive magnetron sputtering a Cu2O target. The optical constants and thicknesses of the films with different nitrogen partial pressure (NPP) were retrieved from transmittance data by an optical model which combines the Forouhi-Bloomer model with modified Drude model. The results show that when NPP increases from 0.0 to 0.033 Pa, the optical gap decreases from 2.14 to 1.95 eV. Additionally, an optical absorption process in the infrared region below the optical band gap was observed for N-doped Cu2O films, which was not found in the pure Cu2O film. This is because an intermediate band (IB) in the band gap results from nitrogen doping. It is believed that N-doped Cu2O film with suitable NPP could be used to enhance the energy conversion efficiency for photovoltaic cells.

  11. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  12. Evaluation of Gate Oxide Damage Caused by Ionization Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Matsunaka, Shigeki; Iyanagi, Katsumi; Fukuhara, Jota; Hayase, Shuzi

    2007-11-01

    An unbalanced magnet (UM) is commonly employed in ionization magnetron sputtering (IMS) in order to increase the ionization rates of sputtering species. In this paper, sputtering using an UM is compared with that using a balanced magnet (BM) during the deposition of Ti thin layers. Ti layers were fabricated on the top of polycrystalline silicon (poly-Si) gate electrodes of antenna metal oxide semiconductor (MOS) capacitors with various thicknesses of gate SiO2 layers ranging from 25 to 80 Å, and the durability of the gate SiO2 layers was monitored by current-voltage (I-V) measurements. It was found that the MOS capacitors with thin SiO2 layers fabricated with the UM were much more damaged than those fabricated with the BM. This characteristic became more marked for thinner SiO2 layers. Its origin was investigated by monitoring the current injected from the plasma to the substrate using a specially designed electrical configuration, and was explained as follows. Electrons are carried toward substrates by curvature drift originating from the diverging magnetic field perpendicular to the substrate. This causes the accumulation of electrons on the gate SiO2 thin layers where the diverging magnetic field is developed at the beginning of discharge, i.e., before the uniform Ti deposition starts to occur. Consequently, the accumulated electrons break the gate SiO2 layer. These results suggest that a new design of magnetic fields for the UM is needed so that the magnetic field does not reach the substrate. It is particularly important to keep the diverging magnetic fields away from the substrates at the beginning of discharge.

  13. An investigation of reactive sputtering for depositing copper indium diselenide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Thornton, J. A.; Cornog, D. G.; Hall, R. B.; Shea, S. P.; Meakin, J. D.

    Sputtering, particularly using magnetron methods, offers great potential for depositing films over large areas at the production volumes required for terrestrial photovoltaic applications. Single phase chalcopyrite CuInSe2 coatings have been successfully deposited by dc reactive cosputtering from Cu and In planar magnetron sources operated in an Ar+H2Se working gas. Studies of coatings deposited with various Cu and In sputtering rates and substrate temperatures indicate that the formation of near-stoichiometric coatings is aided at elevated temperatures by a re-emission mechanism which removes excess In. Photovoltaic test devices formed by evaporating CdS onto the sputtered CuInSe2 have yielded short circuit currents of about 33 mA/sq cm and efficiencies of about 4 percent.

  14. Mark 22 Reactivity

    SciTech Connect

    Buckner, M.R.

    2001-07-02

    Calculations for reactivity held in control rods have underpredicted the observed Mark 22 reactivity. Reactivity predictions by charge designers have accounted for this by including large biases which change with exposure and reactor region. The purpose of this study was to thoroughly investigate the methods and data used in the reactivity calculations. The goal was to identify errors and improvements and make necessary corrections.

  15. Surface modification of 316L stainless steel with magnetron sputtered TiN/VN nanoscale multilayers for bio implant applications.

    PubMed

    Subramanian, B; Ananthakumar, R; Kobayashi, Akira; Jayachandran, M

    2012-02-01

    Nanoscale multilayered TiN/VN coatings were developed by reactive dc magnetron sputtering on 316L stainless steel substrates. The coatings showed a polycrystalline cubic structure with (111) preferential growth. XPS analysis indicated the presence of peaks corresponding to Ti2p, V2p, N1s, O1s, and C1s. Raman spectra exhibited the characteristic peaks in the acoustic range of 160-320 cm(-1) and in the optic range between 480 and 695 cm(-1). Columnar structure of the coatings was observed from TEM analysis. The number of adherent platelets on the surface of the TiN/VN multilayer, VN, TiN single layer coating exhibit fewer aggregation and pseudopodium than on substrates. The wear resistance of the multilayer coatings increases obviously as a result of their high hardness. Tafel plots in simulated bodily fluid showed lower corrosion rate for the TiN/VN nanoscale multilayer coatings compared to single layer and bare 316L SS substrate.

  16. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  17. Metal–insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal–insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  18. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  19. Influence of Al Contents on the Microstructure, Mechanical, and Wear properties of Magnetron Sputtered CrAlN Coatings

    NASA Astrophysics Data System (ADS)

    Shah, Hetal N.; Jayaganthan, R.

    2012-09-01

    CrAlN (0 < x < 0.1) coatings were deposited on SA304 substrate by a reactive magnetron sputtering. The microstructure and composition of the as-deposited coatings were systematically characterized by field emission scanning electron microscopy/EDS and atomic force microscopy, and the phase formation by x-ray diffraction (XRD). The hardness of the coatings was investigated using nanoindentation, while wear properties were investigated using pin-on-disk tribometer. XRD study reveals that the deposited CrAlN coatings crystallized in the cubic B1 NaCl structure. The minimum and maximum hardness of the coatings are found to be 15.28 and 18.81 GPa, respectively. The COF and wear rate are found to be 0.48 and 2.25 × 10-5 mm3/N · m, which is lower than the CrN coatings deposited and characterized under the same environment (0.63 and 2.25 × 10-5 mm3/Nm).

  20. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  1. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

    SciTech Connect

    Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas; Jensen, Jens; Persson, Per; Matloub, Ramin; Muralt, Paul; Kim, Yunseok; Birch, Jens; Hultman, Lars

    2012-01-01

    Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

  2. Influence of substrate properties and annealing temperature on the stress state of magnetron sputtered tungsten thin films

    SciTech Connect

    Oliveira, J. C.; Cavaleiro, A.

    2006-11-15

    The influence of substrate properties and annealing temperature on the stress state of tungsten thin films deposited by dc reactive magnetron sputtering was studied using 310 steel (AISI), Fecralloy registered and Invar registered substrates. Besides elemental tungsten, only residual amounts of contamination elements (O, C, Ar, etc.) were detected by electron probe microanalysis. Only the {alpha}-W crystalline structure, with a preferential <110> orientation, was detected in all the films by x-ray diffraction. The highest lattice parameters were measured for the films deposited on 310 steel substrates, while the smallest values were obtained for the films deposited on Invar registered substrates. These results are closely related to the thermal expansion coefficients of the substrates. All the as-deposited films were in a compressive stress state independent of the substrate type (-3 GPa for 310 steel and Fecralloy registered substrates and -2 GPa for Invar registered substrates). The residual compressive stresses of the films deposited on Fecralloy registered substrates strongly decrease with annealing temperatures up to {approx_equal}-8 GPa at 1175 K. This result shows that the measured compressive stresses are not real, and they are a direct consequence of plastic deformation of the substrate. On the contrary, the compressive stresses measured in the films deposited on Invar registered and 310 steel substrates are real as plastic deformation of the substrates is not observed.

  3. Characterization of TiO 2/Au/TiO 2 films deposited by magnetron sputtering on polycarbonate substrates

    NASA Astrophysics Data System (ADS)

    Kim, Daeil

    2010-11-01

    Transparent and conducting TiO 2/Au/TiO 2 (TAuT) films were deposited by reactive magnetron sputtering on polycarbonate substrates to investigate the effect of the Au interlayer on the optical, electrical, and structural properties of the films. In TAuT films, the Au interlayer thickness was kept at 5 nm. Although total thickness was maintained at 100 nm, the stack structure was varied as 50/5/45, 70/5/25, and 90/5/5 nm. In XRD pattern, the intermediate Au films were crystallized, while all TAuT films did not show any diffraction peaks for TiO 2 films with regardless of stack structure. The optical and electrical properties were dependent on the stack structure of the films. The lowest sheet resistance of 23 Ω/□ and highest optical transmittance of 76% at 550 nm were obtained from TiO 2 90 nm/Au 5 nm/TiO 2 5 nm films. The work function was dependent on the film stack. The highest work function (4.8 eV) was observed with the TiO 2 90 nm/Au 5 nm/TiO 2 5 nm film stack. The TAuT film stack of TiO 2 90 nm/Au 5 nm/TiO 2 5 nm films is an optimized stack that may be an alternative candidate for transparent electrodes in flat panel displays.

  4. Magnetron sputtering of copper on thermosensitive polymer materials of the gas centrifuge rotors

    NASA Astrophysics Data System (ADS)

    Borisevich, V.; Senchenkov, S.; Titov, D.

    2016-09-01

    Magnetron sputtering is the well-known and widely-used deposition technique for coating versatile high-quality and well-adhered films. However, the technology has some limitations, caused by high temperatures on the coating surface. The paper is devoted to the experimental development of a process of magnetron sputtering of copper on a surface coated with a thermosensitive polymer made of carbon fiber with epoxide binder. This process is applied for balancing a rotor of a gas centrifuge for isotope separation. The optimum operating parameters of the process are found and discussed. They were in quantitative agreement with data obtained by means of non-stationary modeling based on a global description of plasma in the typical geometry of the magnetron discharges obtained in independent research. The structure of the resulting layer is investigated.

  5. Solid-state pulse modulator for a 1.7-MW X-band magnetron

    NASA Astrophysics Data System (ADS)

    Choi, Jaegu; Shin, Yong-Moon; Choi, Young-Wook; Kim, Kwan-Ho

    2014-05-01

    Medical linear accelerators (LINAC) for cancer treatment require pulse modulators to generate high-power pulses with a fast rise time, flat top and short duration to drive high-power magnetrons. Solid-state pulse modulators (SSPM) for medical LINACs that use high power semiconductor switches with high repetition rates, high stability and long lifetimes have been introduced to replace conventional linear-type pulse generators that use gaseous discharge switches. In this paper, the performance of a developed SSPM, which mainly consists of a capacitor charger, an insulatedgate bipolar transistor (IGBT)-capacitor stack and a pulse transformer, is evaluated with a dummy load and an X-band magnetron load. A theoretical analysis of the pulse transformer, which is a critical element of the SSPM, is carried out. The output pulse has a fast rise time and low droop, such that the modulator can drive the X-band magnetron.

  6. Metal versus rare-gas ion irradiation during Ti{sub 1-x}Al{sub x}N film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias

    SciTech Connect

    Greczynski, Grzegorz; Lu Jun; Jensen, Jens; Petrov, Ivan; Greene, Joseph E.; Bolz, Stephan; Koelker, Werner; Schiffers, Christoph; Lemmer, Oliver; Hultman, Lars

    2012-11-15

    Metastable NaCl-structure Ti{sub 1-x}Al{sub x}N is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 Degree-Sign C. Three sets of experiments are carried out: a -60 V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti{sub 1-x}Al{sub x}N) with random orientation, due primarily to intense Ar{sup +} irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8 GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar{sup +} ion bombardment is greatly reduced in favor of irradiation predominantly by Al{sup +} ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar{sup +} to Al{sup +} bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.

  7. Modification of film structure by plasma potential control using triode high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nakano, Takeo; Umahashi, Takuya; Baba, Shigeru

    2014-02-01

    We have designed a new triode configuration in a magnetron sputtering apparatus to control the plasma potential of the discharge. An additional chimney electrode was introduced above the conventional sputter gun to apply a positive voltage. The discharge power was provided by a pulse power source to achieve high power pulsed magnetron sputtering operation. We confirmed that the plasma potential increased with increasing positive electrode voltage. Copper films with substantially flatter surfaces could be obtained on a water-cooled and electrically grounded substrate at an Ar gas pressure of 5 Pa.

  8. On the electron energy in the high power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Sigurjonsson, P.; Larsson, P.; Lundin, D.; Helmersson, U.

    2009-06-15

    The temporal variation of the electron energy distribution function (EEDF) was measured with a Langmuir probe in a high power impulse magnetron sputtering (HiPIMS) discharge at 3 and 20 mTorr pressures. In the HiPIMS discharge a high power pulse is applied to a planar magnetron giving a high electron density and highly ionized sputtered vapor. The measured EEDF is Maxwellian-like during the pulse; it is broader for lower discharge pressure and it becomes narrower as the pulse progresses. This indicates that the plasma cools as the pulse progresses, probably due to high metal content of the discharge.

  9. Modeling for calculation of vanadium oxide film composition in reactive-sputtering process

    SciTech Connect

    Yu He; Jiang Yadong; Wang Tao; Wu Zhiming; Yu Junsheng; Wei Xiongbang

    2010-05-15

    A modified model describing the changing ratio of vanadium to oxide on the target and substrate as a function of oxygen flow is described. Actually, this ratio is extremely sensitive to the deposition conditions during the vanadium oxide (VO{sub x}) reactive magnetron-sputtering process. The method in this article is an extension of a previously presented Berg's model, where only a single stoichiometry compound layer was taken into consideration. This work deals with reactive magnetron sputtering of vanadium oxide films with different oxygen contents from vanadium metal target. The presence of vanadium mixed oxides at both target and substrate surface produced during reactive-sputtering process are included. It shows that the model can be used for the optimization of film composition with respect to oxygen flow in a stable hysteresis-free reactive-sputtering process. A systematic experimental study of deposition rate of VO{sub x} with respect to target ion current was also made. Compared to experimental results, it was verified that the theoretical calculation from modeling is in good agreement with the experimental counterpart.

  10. Electrochemical Characteristics of TiN/ZrN Multilayers on the Ti-35Ta-xHf Alloy by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Moon, Byung-Hak; Jeong, Yong-Hoon; Eun, Sang-Won; Choe, Han-Cheol

    2013-11-01

    In this study, we investigated the electrochemical characteristics of TiN/ZrN multilayers on a Ti-35Ta-xHf alloy by radio frequency (RF) magnetron sputtering. The Ti-35Ta-xHf alloy had an α''+ β phase structure. The Ti-35Ta-15Hf alloy had a higher intensity β phase peak than Ti-35Ta-3Hf and 7Hf alloy, which contained lower Hf content. The martensite traces disappeared with increasing Hf content and the Ti-35Ta-15Hf alloy showed an entirely equiaxed structure with a β phase. The multilayer film was developed by alternately depositing TiN and ZrN layers on Ti-35Ta-15Hf substrates using the RF magnetron sputtering system to improve the interface properties between the coating and substrate. The uncoated specimen showed a passive region between 60 and 1300 mV with a current density of 0.38 µA/cm2, whereas, the TiN/ZrN multilayered specimen had a passive region between 210 and 1500 mV with a current density of 0.09 µA/cm2. The experimental results suggest that the as-sputtered layer coated well on the substrate. The TiN/ZrN multilayered film on Ti-35Ta-15Hf substrate exhibited better electrochemical resistance than that of the uncoated Ti-35Ta-15Hf substrate.

  11. A cookbook for building a high-current dimpled H– magnetron source for accelerators

    DOE PAGES

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H– magnetron source has been built at Fermilab for supplying H– beam to the entire accelerator complex. Despite many decades of expertise with slit H– magnetron sources at Fermilab, we were faced with many challenges from the dimpled H– magnetron source, which needed to be overcome in order to make it operational. Dimpled H– sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type ofmore » source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H– magnetron sources.« less

  12. Magnetron deposited TiN coatings for protection of Al-Cu-Ag-Mg-Mn alloy

    NASA Astrophysics Data System (ADS)

    Stepanova, Tatiana V.; Kaziev, Andrey V.; Atamanov, Mikhail V.; Tumarkin, Alexander V.; Dolzhikova, Svetlana A.; Izmailova, Nelly Ph; Kharkov, Maxim M.; Berdnikova, Maria M.; Mozgrin, Dmitry V.; Pisarev, Alexander A.

    2016-09-01

    TiN coatings were deposited on a new Al super-alloy by magnetron sputtering in argon/nitrogen environment. The deposited layer structure, microhardness, adhesion, corrosion resistance, and fatigue life were investigated and tests demonstrated improved performance of the alloy.

  13. Surface treatment of polyimide film for metal magnetron deposition in vacuum

    NASA Astrophysics Data System (ADS)

    Petrov, V.; Vertyanov, D.; Timoshenkov, S.; Nikolaev, V.

    2014-12-01

    This paper brings forward a solution for acquisition of good quality metallization layers on the polyimide substrate by magnetron deposition in vacuum environment. Different film type structures have been analyzed after refining and activation surface treatment operations. Positive effect was shown after the application of polyimide lacquer for surface dielectric film planarization and for structural defects elimination.

  14. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    SciTech Connect

    Abramov, N F; Volpyan, O D; Obod, Yu A; Dronskii, R V

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  15. Numerical studies and optimization of magnetron with diffraction output (MDO) using particle-in-cell simulations

    NASA Astrophysics Data System (ADS)

    Majzoobi, Alireza

    The first magnetron as a vacuum-tube device, capable of generating microwaves, was invented in 1913. This thesis research focuses on numerical simulation-based analysis of magnetron performance. The particle-in-cell (PIC) based MAGIC software tool has been utilized to study the A6 and the Rising-Sun magnetron structures, and to obtain the optimized geometry for optimizing the device performance. The A6 magnetron is the more traditional structure and has been studied more often. The Rising-Sun geometry, consists of two alternating groups of short and long vanes in angular orientation, and was created to achieve mode stability. The effect of endcaps, changes in lengths of the cathode, the location of cathodes with respect to the anode block, and use of transparent cathodes have been probed to gauge the performance of the A6 magnetron with diffraction output. The simulations have been carried out with different types of endcaps. The results of this thesis research demonstrate peak output power in excess of 1GW, with efficiencies on the order of 66% for magnetic (B)-fields in the range of 0.4T - 0.42T. In addition, particle-in-cell simulations have been performed to provide a numerical evaluation of the efficiency, output power and leakage currents for a 12-cavitiy, Rising-Sun magnetron with diffraction output with transparent cathodes. The results demonstrate peak output power in excess of 2GW, with efficiencies on the order of 68% for B-fields in the 0.42T - 0.46T range. While slightly better performance for longer cathode length has been recorded. The results show the efficiency in excess of 70% and peak output power on the order of 2.1GW for an 18 cm cathode length at 0.45T magnetic field and 400 kV applied voltage. All results of this thesis conform to the definite advantage of having endcaps. Furthermore, the role of secondary electron emission (SEE) on the output performance of the12-cavity, 12-cathodes Rising-Sun magnetron has been probed. The results indicate

  16. System for reactivating catalysts

    DOEpatents

    Ginosar, Daniel M.; Thompson, David N.; Anderson, Raymond P.

    2010-03-02

    A method of reactivating a catalyst, such as a solid catalyst or a liquid catalyst is provided. The method comprises providing a catalyst that is at least partially deactivated by fouling agents. The catalyst is contacted with a fluid reactivating agent that is at or above a critical point of the fluid reactivating agent and is of sufficient density to dissolve impurities. The fluid reactivating agent reacts with at least one fouling agent, releasing the at least one fouling agent from the catalyst. The at least one fouling agent becomes dissolved in the fluid reactivating agent and is subsequently separated or removed from the fluid reactivating agent so that the fluid reactivating agent may be reused. A system for reactivating a catalyst is also disclosed.

  17. Multi-functional reactively-sputtered copper oxide electrodes for supercapacitor and electro-catalyst in direct methanol fuel cell applications

    PubMed Central

    Pawar, Sambhaji M.; Kim, Jongmin; Inamdar, Akbar I.; Woo, Hyeonseok; Jo, Yongcheol; Pawar, Bharati S.; Cho, Sangeun; Kim, Hyungsang; Im, Hyunsik

    2016-01-01

    This work reports on the concurrent electrochemical energy storage and conversion characteristics of granular copper oxide electrode films prepared using reactive radio-frequency magnetron sputtering at room temperature under different oxygen environments. The obtained films are characterized in terms of their structural, morphological, and compositional properties. X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope studies reveal that granular, single-phase Cu2O and CuO can be obtained by controlling the oxygen flow rate. The electrochemical energy storage properties of the films are investigated by carrying out cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy tests. The electrochemical analysis reveals that the Cu2O and CuO electrodes have high specific capacitances of 215 and 272 F/g in 6 M KOH solution with a capacity retention of about 80% and 85% after 3000 cycles, respectively. Cyclic voltammetry and chronoamperometry are used to study the electrochemical energy conversion properties of the films via methanol electro-oxidation. The results show that the Cu2O and CuO electrodes are electro-catalytically active and highly stable. PMID:26888077

  18. Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films

    SciTech Connect

    Shi Junxia; Huang Feng; Weaver, Mark L.; Klein, Tonya M.

    2005-05-01

    RuO{sub x} thin films were deposited at room temperature by reactive radio frequency magnetron-sputtering using Ar/O{sub 2} discharges of varying O{sub 2} flow ratio (f{sub O{sub 2}}) over the range 10%-50% and were characterized using x-ray diffraction, x-ray reflectivity, x-ray photoelectron spectroscopy, resistivity, and stress-temperature measurements. With the increase of f{sub O{sub 2}}, the film texture changed from (110) to (101). Films deposited with f{sub O{sub 2}}>25% were determined stoichiometric. The residual stresses in as-deposited films were all compressive and increased with addition of O{sub 2}, except for the film sputtered at f{sub O{sub 2}}=20% which was in biaxial tension. The film deposited at f{sub O{sub 2}}=30% had a low resistivity value of 68 {mu}{omega} cm and near zero stress (<50 MPa tensile) after a thermal cycle in air up to 500 deg. C which is promising for use in microdevices.

  19. The B cell repertoire revealed by major histocompatibility complex- specific helper T cells. I. Frequencies of a genetically defined V region marker among mitogen- and T helper cell-reactive B lymphocytes in normal and immunized mice

    PubMed Central

    1984-01-01

    The aim of the present work was to analyze the frequencies of a genetically defined variable (V) region marker in the B cell subset sensitive to T cell help. To this end we used an alloreactive T cell line that has the property of inducing B cells of the appropriate haplotype to exponential growth and polyclonal antibody synthesis. The frequency obtained with this helper line was also directly compared to that obtained with lipopolysaccharide (LPS). We found that in normal BALB/c mice the frequency of M460-positive clonotypes was respectively, 1/100 and 1/1,000 among the T helper- and LPS-sensitive B cell subsets. In mice immunized with antiidiotype coupled to a thymus-dependent antigen, the differences in the numbers of idiotype-positive precursors were even more accentuated, i.e. 1/20 in the B cell subset triggered by T helper cells and 1/800 in those cells responsive to LPS. The frequencies of the M460 determinant in mice immunized with anti- idiotypes coupled to thymus-independent antigens were not significantly different, in either B cell subset, from those obtained with spleen cells of normal nonimmunized animals. Taken as a whole, our results imply that the V gene repertoire revealed by LPS includes precursor distribution, as this distribution occurs during the early stage of B cell development (potential repertoire), while the repertoire revealed by T helper cells includes the V region distribution of those clones that are selected in the periphery of the functional immune system. PMID:6200567

  20. Morphological changes of tungsten surfaces by low-flux helium plasma treatment and helium incorporation via magnetron sputtering.

    PubMed

    Iyyakkunnel, Santhosh; Marot, Laurent; Eren, Baran; Steiner, Roland; Moser, Lucas; Mathys, Daniel; Düggelin, Marcel; Chapon, Patrick; Meyer, Ernst

    2014-07-23

    The effect of helium on the tungsten microstructure was investigated first by exposure to a radio frequency driven helium plasma with fluxes of the order of 1 × 10(19) m(-2) s(-1) and second by helium incorporation via magnetron sputtering. Roughening of the surface and the creation of pinholes were observed when exposing poly- and nanocrystalline tungsten samples to low-flux plasma. A coating process using an excess of helium besides argon in the process gas mixture leads to a porous thin film and a granular surface structure whereas gas mixture ratios of up to 50% He/Ar (in terms of their partial pressures) lead to a dense structure. The presence of helium in the deposited film was confirmed with glow-discharge optical emission spectroscopy and thermal desorption measurements. Latter revealed that the highest fraction of the embedded helium atoms desorb at approximately 1500 K. Identical plasma treatments at various temperatures showed strongest modifications of the surface at 1500 K, which is attributed to the massive activation of helium singly bond to a single vacancy inside the film. Thus, an efficient way of preparing nanostructured tungsten surfaces and porous tungsten films at low fluxes was found. PMID:24960311

  1. Influence of RF power on physical properties of ZnO:ZnF2 thin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Hsing; Lee, Yen-Hsien; Kang, Tsung-Kuei; Liu, Han-Wen

    2015-07-01

    Fluorine-doped zinc oxide (FZO) thin films were prepared on glass substrates at room temperature by radio frequency (RF) magnetron sputtering with a ceramic ZnO target containing 1.5 wt% zinc fluoride (ZnF2). This study investigates the influences of RF powers of sputtering and H2 plasma treatment on properties of FZO films. For as-deposited films, all films had a highly (0 0 2) preferential c-axis orientation and film crystallinity was improved with increasing deposition power. The film resistivity decreased and the average optical transmittance in the visible range increased with increasing deposition power. The lowest resistivity of 9.29 × 10-4 Ω-cm and the average transmittance above 90% were obtained at the power of 150 W. For plasma treated films, the crystal structure had no significant change but the film resistivity further decreased to 7.92 × 10-4 Ω-cm and the optical bandgap increased to 3.725 eV. The calculated figures of merit exhibited that the film deposited with a high deposition power and a low H2 plasma power possessed the optimized optoelectronic properties. The H2 plasma treated FZO thin films have potential to be applied as transparent conducting electrodes.

  2. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  3. Hydroxyapatite coating on biodegradable AZ31 and Mg-Ca alloys prepared by RF-magnetron sputtering

    SciTech Connect

    Mukhametkaliyev, T. Surmeneva, M. Surmenev, R.; Mathan, B. K.

    2015-11-17

    A thin film of hydroxyapatite (HA) was deposited on AZ31 and Mg-Ca alloys by using radio frequency (RF) magnetron sputtering. The thickness of the HA coating was determined to be 750 nm. The phase composition, microstructure, and surface morphology of the HA coatings were investigated using X-ray diffraction and scanning electron microscopy. In vitro degradation behaviour of the HA coated alloys was evaluated in simulated body fluid (SBF) and 3.5wt.% NaCl solution using electrochemical method. The coatings homogeneously covered the entire surface of the substrates. The coating structure corresponded to a nanostructured HA. The ultrathin coating significantly improved the degradation resistance of the alloy. Nanocrystalline HA coating significantly improved the corrosion resistance of the Mg-Ca and AZ31 magnesium alloys. The polarization resistance (Rp) of the coated Mg-Ca alloy was more than two-order of magnitude higher and the corrosion current density I{sub corr} reduced by ∼ 98% as compared to the base alloy.

  4. Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

    NASA Astrophysics Data System (ADS)

    Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-08-01

    This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV-Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2 θ degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power.

  5. Simulation of nanoindentation experiment on RF magnetron sputtered nanocolumnar V2O5 film using finite element method

    NASA Astrophysics Data System (ADS)

    Porwal, Deeksha; Gupta, A. K.; Pillai, Anju M.; Sharma, Anand Kumar; Mukhopadhyay, Anoop Kumar; Khan, Kallol; Dey, Arjun

    2016-07-01

    The present work reports the nanomechanical behavior of a pulsed radio frequency (RF) magnetron sputtered vanadium pentoxide (V2O5) film deposited on silicon (Si) substrate using a combination of nanoindentation experiments and a finite element model (FEM). Deposited V2O5 film is characterized by x-ray diffraction (XRD), nanoprofilometry, field emission scanning electron microscopy (FESEM), nanoindentation and FEM. The phase pure 6.16 μm V2O5 film shows a nanocolumnar structure. The film exhibits nanohardness (H) of 0.16 ± 0.013 GPa and Young’s modulus (E) of about 12.05 ± 1.41 GPa. The FEM reproduces experimentally obtained load versus depth (P-h) plot and subsequently give yield stress and strain hardening component data of V2O5 film on Si substrate. Stress-strain behavior and von-Mises stress distribution of the V2O5 film with Si substrate system are also simulated. The FE model confirms the local maximum equivalent stress active underneath the nanoindenters to be nearly twice as high as the yield stress and thereby explains the plastic deformation observed in the V2O5 film.

  6. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    NASA Astrophysics Data System (ADS)

    Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

    2016-11-01

    In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

  7. Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Gu, Jin-hua; Lu, Zhou; Zhong, Zhi-you; Long, Lu; Long, Hao

    2016-05-01

    The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum ( FWHM) of 1.76×10-3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc's relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier's dispersion model.

  8. Reactive sputtered copper indium diselenide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Thornton, J. A.; Cornog, D. G.; Hall, R. B.; Shea, S. P.; Meakin, J. D.

    1984-06-01

    Single phase chalcopyrite CuInSe2 coatings have been deposited by reactive cosputtering from Cu and In planar magnetron sources operated in an Ar + H2Se working gas. Effective sputtering yields from the conditioned Cu and In targets were approximately 0.7 and 0.5 atoms/unit charge, respectively. Sputtering rate, H2Se injection rate, and H2Se and H2 partial pressure measurements were consistent with the overall reaction Cu + In + 2H2SE yields CuInSe2 + 2H2. The formation of near-stoichiometric coatings appears to be aided at elevated temperatures by a reemission mechanism which removes excess In. Photovoltaic devices formed by evaporating CdS onto the sputtered CuInSe2 yielded short circuit currents of about 33 mA/sq cm and efficiencies of about 4 percent.

  9. Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

    SciTech Connect

    Maaloul, L.; Gangwar, R. K.; Stafford, L.

    2015-07-15

    A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

  10. A roadmap for OH reactivity research

    NASA Astrophysics Data System (ADS)

    Williams, Jonathan; Brune, William

    2015-04-01

    A fundamental property of the atmosphere is the frequency of gas-phase reactions with the OH radical, the atmosphere's primary oxidizing agent. This reaction frequency is called the OH reactivity and is the inverse the lifetime of the OH radical itself, which varies from a few seconds in the clean upper troposphere to below 10 ms in forests and polluted city environments. Ever since the discovery of the OH radical's importance to tropospheric chemistry, the characterization of its overall loss rate (OH reactivity) has remained a key question. At first, this property was assessed by summing the reactivity contributions of individually measured compounds; however, as improving analytical technology revealed ever more reactive species in ambient air, it became clear that this approach could provide only a lower limit. Approximately 15 years ago, the direct measurement of total OH reactivity was conceived independently by two groups. The first publications demonstrated direct OH reactivity measurements in the laboratory (Calpini et al., 1999) based on LIDAR and in the ambient air (Kovacs and Brune, 2001) based on in situ laser induced fluorescence detection of OH.

  11. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    PubMed

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  12. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    NASA Astrophysics Data System (ADS)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K.; Daniels, Stephen; Hopkins, M. B.

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  13. Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

    SciTech Connect

    Yang, W. F.; Liu, Z. G.; Wu, Z. Y.; Hong, M. H.; Wang, C. F.; Lee, Alex Y. S.; Gong, H.

    2013-03-18

    Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated with conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.

  14. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  15. Formation of cubic boron-nitride by the reactive sputter deposition of boron

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; Makowiecki, D.W.; McKeman, M.A.

    1997-03-01

    Boron-nitride films are synthesized by RF magnetron sputtering boron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Auger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and x-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bonding, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline BN phases. The deposition of stable and adherent boron nitride coatings consisting of the cubic phase requires 400 `C substrate heating and the application of a 300 V negative bias.

  16. Flash post-discharge emission in a reactive HiPIMS process

    NASA Astrophysics Data System (ADS)

    Loquai, S.; Zabeida, O.; Klemberg-Sapieha, J. E.; Martinu, L.

    2016-09-01

    In the present work, time-, space- and species-resolved optical emission spectroscopy has been applied to investigate post-pulse behavior of the reactive High Power Impulse Magnetron Sputtering (HiPIMS) process with a partially poisoned target. Following each pulse, at a high O2/Ar ratio, a well-defined post-discharge emission zone detaches from the target during the first few microseconds of the electron cool-down; this zone exhibits high emission intensity in the near-surface region, and it moves toward the substrate holder. We link this behavior to a localized high density of metastable molecular oxygen, and to the electron attachment dissociation of oxygen.

  17. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    NASA Astrophysics Data System (ADS)

    Fortier, Jean-Philippe

    objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the

  18. Zeroing in on Tumor-Reactive TILs.

    PubMed

    Ohashi, Pamela S

    2016-09-01

    Adoptive cell transfer of tumor-specific T cells provides an effective strategy for cancer immunotherapy. An article in this issue provides a novel approach to refine this technology by identifying tumor-reactive T cells based on frequency and PD-1 expression. Cancer Immunol Res; 4(9); 719. ©2016 AACRSee article by Ascierto et al., p. 726. PMID:27590279

  19. Current-Voltage Characteristics and Deposition of AlTiN Thin Films by High Power Impulse Magnetron Sputtering Process

    NASA Astrophysics Data System (ADS)

    Wu, Wan-Yu; Su, Amei; Liu, Yawei; Yeh, Chi-Ming; Chen, Wei-Chih; Chang, Chi-Lung

    2015-09-01

    In this study, AlTiN thin films were deposited using a high power impulse magnetron sputtering (HiPIMS) process under a unipolar mode. The AlTi target had a composition of 70 at% Al and 30 at% Ti. Nitrogen was used as the reactive gas to deposite AlTiN thin films along with Ar gas at a working pressure of 1 ×10-3 torr. The target voltage and current were measured at different conditions including various duty cycles from 1 to 5%, pulse durations from 50 to 400 μs, target powers from 0.6 to 1.8 kW, and N2/Ar ratios from 0 to 1. Depending on the deposition condition, peak powers in the range of 104 to 105 W were observed. The effect of deposition conditions were discussed. For film deposition, the pulse duration and the duty cycle were fixed at 100 μs and 3%, respectively. A fixed bias of -150 V was applied to the substrates, including Si wafer, 304 stainless steel, and tungsten carbide.It was found that the nitrogen content increases with the N2/Ar ratio and then saturates. With increasing target power, a higher N2/Ar ratio was required for the AlTiN thin films to have a better mechanical properties. Meanwhile, the hardness of the AlTiN thin films also increases with the target power. The highest hardness of 41 GPa was observed as the N2/Ar ratio was 0.9 and the power was 1.8 kW. It was found that the amount Al-N bonding and the distribution of AlN phase within the AlTiN thin films play an important role in determining the mechanical properties.

  20. Phenylethynyl reactive diluents

    NASA Technical Reports Server (NTRS)

    Bryant, Robert G. (Inventor); Jensen, Brian J. (Inventor); Hergenrother, Paul M. (Inventor)

    1995-01-01

    A composition of matter having a specified general structure is employed to terminate a nucleophilic reagent, resulting in the exclusive production of phenylethynyl terminated reactive oligomers which display unique thermal characteristics. A reactive diluent having a specified general structure is employed to decrease the melt viscosity of a phenylethynyl terminated reactive oligomer and to subsequently react with to provide a thermosetting material of enhanced density. These materials have features which make them attractive candidates for use as composite matrices and adhesives.

  1. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, T. Santhosh; Gogoi, P.; Thota, S.; Pamu, D.

    2014-06-01

    We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP) on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110) direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCox)TiO3 (x = 0.05) thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ˜ 1.2 × 10-3) over a wide range of frequencies for 75% OMP. The role of electric field frequency (f) and OMP on the ac-conductivity of (Mg0.95Co0.05)TiO3 have been studied. A progressive increase in the activation energy (Ea) and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10-9 to 1.14 × 10-9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  2. Analytic model of the energy distribution function for highly energetic electrons in magnetron plasmas

    SciTech Connect

    Gallian, Sara Trieschmann, Jan; Mussenbrock, Thomas; Brinkmann, Ralf Peter; Hitchon, William N. G.

    2015-01-14

    This paper analyzes a situation which is common for magnetized technical plasmas such as dc magnetron discharges and high power impulse magnetron sputtering (HiPIMS) systems, where secondary electrons enter the plasma after being accelerated in the cathode fall and encounter a nearly uniform bulk. An analytic calculation of the distribution function of hot electrons is presented; these are described as an initially monoenergetic beam that slows down by Coulomb collisions with a Maxwellian distribution of bulk (cold) electrons, and by inelastic collisions with neutrals. Although this analytical solution is based on a steady-state assumption, a comparison of the characteristic time-scales suggests that it may be applicable to a variety of practical time-dependent discharges, and it may be used to introduce kinetic effects into models based on the hypothesis of Maxwellian electrons. The results are verified for parameters appropriate to HiPIMS discharges, by means of time-dependent and fully kinetic numerical calculations.

  3. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    SciTech Connect

    Rajalakshmi, R.; Angappane, S.

    2015-06-24

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  4. Characterization of hydrogenated and deuterated silicon carbide films codeposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Pantelica, D.; Ionescu, P.; Petrascu, H.; Dracea, M. D.; Statescu, M.; Matei, E.; Rasoga, O.; Stancu, C.; Marascu, V.; Ion, V.; Acsente, T.; Dinescu, G.

    2016-03-01

    In this work we present the deposition of amorphous SiC thin films by radiofrequency dual magnetron sputtering. The dependence of the deposited films properties over the discharges electrical power and the effect of hydrogenous species (H2 and/or D2) addition to main discharge gas (Ar) were investigated. Accurate elemental analysis of the samples, including detection of hydrogen and deuterium, was performed by ion beam analysis (IBA) techniques: RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis). SiCx thin films with thicknesses between 1700 and 4500 Å and C/Si ratio between 0.2/1 and 1.25/1 were obtained in different deposition conditions. The results prove that thin films of amorphous SiC with well controlled properties can be produced using radiofrequency dual magnetron sputtering.

  5. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  6. Pseudo-3D PIC modeling of drift-induced spatial inhomogeneities in planar magnetron plasmas

    NASA Astrophysics Data System (ADS)

    Revel, A.; Minea, T.; Tsikata, S.

    2016-10-01

    A pseudo-3D modeling approach, based on a particle-in-cell (PIC)-Monte Carlo collisions algorithm, has been developed for the study of large- and short-scale organization of the plasma in a planar magnetron. This extension of conventional PIC modeling permits the observation of spontaneous organization of the magnetron plasma, under the influence of crossed electric and magnetic fields, into the well-known, large-scale regions of enhanced ionization and density known as spokes. The nature of complex three-dimensional electron trajectories around such structures, and non-uniform ionization within them, is revealed. This modeling provides direct numerical evidence for the existence of high-amplitude internal spoke electric fields, proposed in earlier works. A 3D phenomenological model, consistent with numerical results, is proposed. Electron density fluctuations in the megahertz range, with characteristics similar to the electron cyclotron drift instability experimentally identified in a recent Letter, are also found.

  7. Laser-Aided Diagnostics of Atoms and Particulates in Magnetron Sputtering Plasmas

    SciTech Connect

    Nafarizal, N.; Takada, N.; Sasaki, K.

    2009-07-07

    Laser-aided diagnostic technique is introduced as an advanced and valuable technique to evaluate the properties of plasma. This technique is an expensive and sophisticated technique which requires researchers to have a basic knowledge in optical spectroscopy. In the present paper, we will generally introduce the experimental work using laser-induced fluorescence (LIF) and laser light scattering (LLS) techniques. The LIF was used to evaluate the spatial distribution of Cu atoms in magnetron sputtering plasma. The change in the spatial distribution was studied as a function of discharge power. On the other hand, the LLS was used to evaluate the generation of Cu particulates in high-pressure magnetron sputtering plasma. The temporal evolution of Cu particulates in the gas phase of sputtering plasma was visualized successfully.

  8. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    SciTech Connect

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

  9. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    DOE PAGES

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in thismore » review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.« less

  10. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    SciTech Connect

    Gudmundsson, J. T.; Lundin, D.; Minea, T. M.; Stancu, G. D.; Brenning, N.

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  11. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering.

    PubMed

    Arroyo-Hernández, María; Alvaro, Raquel; Serrano, Sheila; Costa-Krämer, José Luis

    2011-01-01

    The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO) thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV) conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  12. Equibrium and Stability of the Brillouin Flow in Recirculating Planar Magnetron

    NASA Astrophysics Data System (ADS)

    Simon, D. H.; Lau, Y. Y.; Franzi, M.; Greening, G.; Gilgenbach, R. M.; Luginsland, J. W.

    2011-10-01

    Simulation of the novel recirculating planar magnetron, RPM, has shown rapid formation of electron bunches in the inverted magnetron configuration. This bunching mechanism was recently simulated in a thin electron layer model, which exhibited negative, positive, and infinite mass behavior, depending on the magnitude and sign of the radial electric field. We analyze these properties for the relativistic, cylindrical Brillouin flow, to evaluate RPM startup. We make use of our recent discovery that the electrostatic potential and the vector potential satisfy a Buneman-Hartree like relation, and a Hull-cutoff like relation EVERYWHERE within the equilibrium Brillouin flow. This work was supported by AFOSR, L-3 Communications Electron Devices, and Northrop Grumman Corporation.

  13. Magnetron sputtered boron films for increasing hardness of a metal surface

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    2003-05-27

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  14. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    SciTech Connect

    Crăciunescu, Corneliu M. Mitelea, Ion Budău, Victor; Ercuţa, Aurel

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  15. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Crǎciunescu, Corneliu M.; Mitelea, Ion; Budǎu, Victor; ErcuÅ£a, Aurel

    2014-11-01

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  16. Power-combining based on master-slave injection-locking magnetron

    NASA Astrophysics Data System (ADS)

    Ping, Yuan; Yi, Zhang; Wenjun, Ye; Huacheng, Zhu; Kama, Huang; Yang, Yang

    2016-07-01

    A microwave power-combining system composed of two Panasonic 2M244-M1 magnetrons based on master-slave injection-locking is demonstrated in this paper. The principle of master-slave injection-locking and the locking condition are theoretical analyzed. Experimental results are consistent with the theoretical analysis and the experimental combined efficiency is higher than 96%. Compared with the external-injection-locked system, the power-combining based on the master-slave injection-locking magnetron is superior by taking out the external solid-state driver and the real-time phase control system. Thus, this power-combining system has great potential for obtaining a high efficiency, high stability, low cost, and high power microwave source. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  17. Measuring the energy flux at the substrate position during magnetron sputter deposition processes

    SciTech Connect

    Cormier, P.-A.; Thomann, A.-L.; Dussart, R.; Semmar, N.; Mathias, J.; Balhamri, A.; Snyders, R.; Konstantinidis, S.

    2013-01-07

    In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

  18. Digital slip frequency generator and method for determining the desired slip frequency

    DOEpatents

    Klein, Frederick F.

    1989-01-01

    The output frequency of an electric power generator is kept constant with variable rotor speed by automatic adjustment of the excitation slip frequency. The invention features a digital slip frequency generator which provides sine and cosine waveforms from a look-up table, which are combined with real and reactive power output of the power generator.

  19. S-band relativistic magnetron operation with an active plasma cathode

    SciTech Connect

    Hadas, Y.; Sayapin, A.; Kweller, T.; Krasik, Ya. E.

    2009-04-15

    Results of experimental research on a relativistic S-band magnetron with a ferroelectric plasma source as a cathode are presented. The cathode plasma was generated using a driving pulse (approx3 kV, 200 ns) applied to the ferroelectric cathode electrodes via inductive decoupling prior to the beginning of an accelerating pulse (200 kV, 150 ns) delivered by a linear induction accelerator. The magnetron and generated microwave radiation parameters obtained for the ferroelectric plasma cathode and the explosive emission plasma were compared. It was shown that the application of the ferroelectric plasma cathode allows one to avoid a time delay in the appearance of the electron emission to achieve a better matching between the magnetron and linear induction accelerator impedances and to increase significantly (approx30%) the duration of the microwave pulse with an approx10% increase in the microwave power. The latter results in the microwave radiation generation being 30% more efficient than when the explosive emission cathode is used, where efficiency does not exceed 20%.

  20. Fabrication of Optical Multilayer Devices from Porous Silicon Coatings with Closed Porosity by Magnetron Sputtering.

    PubMed

    Caballero-Hernández, Jaime; Godinho, Vanda; Lacroix, Bertrand; Jiménez de Haro, Maria C; Jamon, Damien; Fernández, Asunción

    2015-07-01

    The fabrication of single-material photonic-multilayer devices is explored using a new methodology to produce porous silicon layers by magnetron sputtering. Our bottom-up methodology produces highly stable amorphous porous silicon films with a controlled refractive index using magnetron sputtering and incorporating a large amount of deposition gas inside the closed pores. The influence of the substrate bias on the formation of the closed porosity was explored here for the first time when He was used as the deposition gas. We successfully simulated, designed, and characterized Bragg reflectors and an optical microcavity that integrates these porous layers. The sharp interfaces between the dense and porous layers combined with the adequate control of the refractive index and thickness allowed for excellent agreement between the simulation and the experiments. The versatility of the magnetron sputtering technique allowed for the preparation of these structures for a wide range of substrates such as polymers while also taking advantage of the oblique angle deposition to prepare Bragg reflectors with a controlled lateral gradient in the stop band wavelengths.

  1. Influence of pulse duration on the plasma characteristics in high-power pulsed magnetron discharges

    SciTech Connect

    Konstantinidis, S.; Dauchot, J.P.; Ganciu, M.; Ricard, A.; Hecq, M.

    2006-01-01

    High-power pulsed magnetron discharges have drawn an increasing interest as an approach to produce highly ionized metallic vapor. In this paper we propose to study how the plasma composition and the deposition rate are influenced by the pulse duration. The plasma is studied by time-resolved optical emission and absorption spectroscopies and the deposition rate is controlled thanks to a quartz microbalance. The pulse length is varied between 2.5 and 20 {mu}s at 2 and 10 mTorr in pure argon. The sputtered material is titanium. For a constant discharge power, the deposition rate increases as the pulse length decreases. With 5 {mu}s pulse, for an average power of 300 W, the deposition rate is {approx}70% of the deposition rate obtained in direct current magnetron sputtering at the same power. The increase of deposition rate can be related to the sputtering regime. For long pulses, self-sputtering seems to occur as demonstrated by time-resolved optical emission diagnostic of the discharge. In contrary, the metallic vapor ionization rate, as determined by absorption measurements, diminishes as the pulses are shortened. Nevertheless, the ionization rate is in the range of 50% for 5 {mu}s pulses while it lies below 10% in the case of a classical continuous magnetron discharge.

  2. Magnetic control of breakdown: Toward energy-efficient hollow-cathode magnetron discharges

    SciTech Connect

    Baranov, O.; Romanov, M.; Kumar, S.; Zong, X. X.; Ostrikov, K.

    2011-03-15

    Characteristics of electrical breakdown of a planar magnetron enhanced with an electromagnet and a hollow-cathode structure, are studied experimentally and numerically. At lower pressures the breakdown voltage shows a dependence on the applied magnetic field, and the voltage necessary to achieve the self-sustained discharge regime can be significantly reduced. At higher pressures, the dependence is less sensitive to the magnetic field magnitude and shows a tendency of increased breakdown voltage at the stronger magnetic fields. A model of the magnetron discharge breakdown is developed with the background gas pressure and the magnetic field used as parameters. The model describes the motion of electrons, which gain energy by passing the electric field across the magnetic field and undergo collisions with neutrals, thus generating new bulk electrons. The electrons are in turn accelerated in the electric field and effectively ionize a sufficient amount of neutrals to enable the discharge self-sustainment regime. The model is based on the assumption about the combined classical and near-wall mechanisms of electron conductivity across the magnetic field, and is consistent with the experimental results. The obtained results represent a significant advance toward energy-efficient multipurpose magnetron discharges.

  3. Study on the effect of target on plasma parameters of magnetron sputtering discharge plasma

    SciTech Connect

    Saikia, P.; Kakati, B.; Saikia, B. K.

    2013-10-15

    In this study, the effect of magnetron target on different plasma parameters of Argon/Hydrogen (Ar - H{sub 2}) direct current (DC) magnetron discharge is examined. Here, Copper (Cu) and Chromium (Cr) are used as magnetron targets. The value of plasma parameters such as electron temperature (kT{sub e}), electron density (N{sub e}), ion density (N{sub i}), degree of ionization of Ar, and degree of dissociation of H{sub 2} for both the target are studied as a function of input power and hydrogen content in the discharge. The plasma parameters are determined by using Langmuir probe and Optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. The obtained results show that electron and ion density decline with gradual addition of Hydrogen in the discharge and increase with rising input power. It brings significant changes on the degree of ionization of Ar and dissociation of H{sub 2}. The enhanced value of electron density (N{sub e}), ion density (N{sub i}), degree of Ionization of Ar, and degree of dissociation of H{sub 2} for Cr compared to Cu target is explained on the basis of it's higher Ion Induced Secondary Electron Emission Coefficient (ISEE) value.

  4. Reactive multilayers fabricated by vapor deposition. A critical review

    SciTech Connect

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, with most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.

  5. Reactive multilayers fabricated by vapor deposition. A critical review

    DOE PAGES

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, withmore » most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.« less

  6. Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al{sub 2}O{sub 3} (0001) by high power impulse magnetron sputtering

    SciTech Connect

    Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C.-L.; Darakchieva, V.; Jensen, J.; Persson, P. O. A.; Sandstroem, P.; Helmersson, U.; Hultman, L.; Birch, J.; Lai, W.-J.; Chen, L.-C.; Chen, K.-H.

    2011-12-15

    We study the effect of high power pulses in reactive magnetron sputter epitaxy on the structural properties of GaN (0001) thin films grown directly on Al{sub 2}O{sub 3} (0001) substrates. The epilayers are grown by sputtering from a liquid Ga target, using a high power impulse magnetron sputtering power supply in a mixed N{sub 2}/Ar discharge. X-ray diffraction, micro-Raman, micro-photoluminescence, and transmission electron microscopy investigations show the formation of two distinct types of domains. One almost fully relaxed domain exhibits superior structural and optical properties as evidenced by rocking curves with a full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the full width at half maximum of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to the higher densities of the point and extended defects, resulting from the ion bombardment during growth. Voids form at the domain boundaries. Mechanisms for the formation of differently strained domains, along with voids during the epitaxial growth of GaN are discussed.

  7. Reactive Leidenfrost droplets

    NASA Astrophysics Data System (ADS)

    Raufaste, C.; Bouret, Y.; Celestini, F.

    2016-05-01

    We experimentally investigate the reactivity of Leidenfrost droplets with their supporting substrates. Several organic liquids are put into contact with a copper substrate heated above their Leidenfrost temperature. As the liquid evaporates, the gaseous flow cleans the superficial copper oxide formed at the substrate surface and the reaction maintains a native copper spot below the evaporating droplet. The copper spot can reach several times the droplet size for the most reactive organic compounds. This study shows an interesting coupling between the physics of the Leidenfrost effect and the mechanics of reactive flows. Different applications are proposed such as drop motion tracking and vapor flow monitoring.

  8. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    NASA Astrophysics Data System (ADS)

    Ehiasarian, A. P.; Vetushka, A.; Gonzalvo, Y. Aranda; Sáfrán, G.; Székely, L.; Barna, P. B.

    2011-05-01

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N2 atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (Id) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti1+, Ti2+ and atomic nitrogen N1+. Ti1+ ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 × 1016 m-3. Plasma density, and ion flux ratios of N1+: N21+ and Ti1+: Ti0 increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high Id, N1+: N21+> 1 and Ti1+: Ti0> 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As Id reduced and N1+: N21+ and Ti1+: Ti0 dropped below 1, the film texture switched to strong 111 with a dense structure. At very low Id, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and properties are discussed.

  9. The use of segmented cathodes to determine the spoke current density distribution in high power impulse magnetron sputtering plasmas

    SciTech Connect

    Poolcharuansin, Phitsanu; Estrin, Francis Lockwood; Bradley, James W.

    2015-04-28

    The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes, the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies E{sub p} < 0.8 J, spokes appear to be chaotic in nature (with random arrival times), however as E{sub p} increases, coherent spokes are observed with velocities between 6.5 and 10 km s{sup −1} and mode numbers m = 3 or above. At E{sub p} > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target.

  10. Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

    SciTech Connect

    Sánchez-Hernández, Z.E.; Domínguez-Crespo, M.A.; Torres-Huerta, A.M.; Onofre-Bustamante, E.; Andraca Adame, J.; Dorantes-Rosales, H.

    2014-05-01

    The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO{sub 2} + 8% Y{sub 2}O{sub 3}) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphate buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure.

  11. Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

    SciTech Connect

    Mayrhofer, P. M.; Bittner, A.; Schmid, U.; Eisenmenger-Sittner, C.; Euchner, H.

    2013-12-16

    Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. Sc{sub x}Al{sub 1−x}N thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E{sub 1}(TO) and A{sub 1}(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

  12. Sputter process with time-variant reactive gas mixture for the deposition of optical multilayer and gradient layer systems

    NASA Astrophysics Data System (ADS)

    Bartzsch, H.; Weber, J.; Lau, K.; Glöß, D.; Frach, P.

    2008-09-01

    Magnetron sputtering of a silicon target in a time-variant mixture of the reactive gases oxygen and nitrogen allows the deposition of optical multilayer and gradient layer systems of silicon oxinitride at one stationary sputtering station. In this paper the processes within the sputter discharge and the properties of the growing film during the change of the reactive gas composition are investigated using optical in-situ monitoring, optical plasma emission spectroscopy and plasma impedance monitoring. A time delay between the change to the reactive gas composition and the resulting change to the film composition was observed. The time delay is longer for the transition from oxide to nitride deposition then vice versa. This asymmetry is attributed to the different affinity of nitrogen and oxygen to the silicon target. Examples of deposited antireflective coatings as well as rugate filters based on silicon oxinitride multilayer and gradient layer designs are given.

  13. Tailoring of antibacterial Ag nanostructures on TiO2 nanotube layers by magnetron sputtering.

    PubMed

    Uhm, Soo-Hyuk; Song, Doo-Hoon; Kwon, Jae-Sung; Lee, Sang-Bae; Han, Jeon-Geon; Kim, Kyoung-Nam

    2014-04-01

    To reduce the incidence of postsurgical bacterial infection that may cause implantation failure at the implant-bone interface, surface treatment of titanium implants with antibiotic materials such as silver (Ag) has been proposed. The purpose of this work was to create TiO2 nanotubes using plasma electrolytic oxidation (PEO), followed by formation of an antibacterial Ag nanostructure coating on the TiO2 nanotube layer using a magnetron sputtering system. PEO was performed on commercially pure Ti sheets. The Ag nanostructure was added onto the resulting TiO2 nanotube using magnetron sputtering at varying deposition rates. Field emission scanning electron microscopy and transmission electron microscopy were used to characterize the surface, and Ag content on the TiO2 nanotube layer was analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Scanning probe microscopy for surface roughness and contact angle measurement were used to indirectly confirm enhanced TiO2 nanotube hydrophilicity. Antibacterial activity of Ag ions in solution was determined by inductively coupled plasma mass spectrometry and antibacterial testing against Staphylococcus aureus (S. aureus). In vitro, TiO2 nanotubes coated with sputtered Ag resulted in significantly reduced S. aureus. Cell viability assays showed no toxicity for the lowest sputtering time group in the osteoblastic cell line MC3T3-E1. These results suggest that a multinanostructured layer with a biocompatible TiO2 nanotube and antimicrobial Ag coating is a promising biomaterial that can be tailored with magnetron sputtering for optimal performance.

  14. Towards a quantitative understanding of total OH reactivity: A review

    NASA Astrophysics Data System (ADS)

    Yang, Yudong; Shao, Min; Wang, Xuemei; Nölscher, Anke C.; Kessel, Stephan; Guenther, Alex; Williams, Jonathan

    2016-06-01

    Over the past fifty years, considerable efforts have been devoted to measuring the concentration and chemical speciation of volatile organic compounds (VOCs) in ambient air and emissions. Recently, it has become possible to directly determine the overall effect of atmospheric trace gases on the oxidant hydroxyl radicals (OH), by measuring OH reactivity (OH loss frequency). Quantifying total OH reactivity is one way to characterize the roles of VOCs in formation of ground-level ozone and secondary organic aerosols (SOA). Approaches for measuring total OH reactivity in both emissions and ambient air have been progressing and have been applied in a wide range of studies. Here we evaluate the main techniques used to measure OH reactivity, including two methods directly measuring OH decay and one comparative reactivity method (CRM), and summarize the existing experimental and modeling studies. Total OH reactivity varies significantly on spatial, diurnal, seasonal and vertical bases. Comparison with individually detected OH sinks often reveals a significant missing reactivity, ranging from 20% to over 80% in some environments. Missing reactivity has also been determined in most source emission studies. These source measurements, as well as numerical models, have indicated that both undetected primary emissions and unmeasured secondary products could contribute to missing reactivity. A quantitative understanding of total OH reactivity of various sources and ambient environments will enhance our understanding of the suite of compounds found in emissions as well as chemical processes, and will also provide an opportunity for the improvement of atmospheric chemical mechanisms.

  15. TiO2/SiO2 multilayer as an antireflective and protective coating deposited by microwave assisted magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, M.; Wojcieszak, D.; Domaradzki, J.; Kaczmarek, D.; Song, S.; Placido, F.

    2013-06-01

    In this paper designing, preparation and characterization of multifunctional coatings based on TiO2/SiO2 has been described. TiO2 was used as a high index material, whereas SiO2 was used as a low index material. Multilayers were deposited on microscope slide substrates by microwave assisted reactive magnetron sputtering process. Multilayer design was optimized for residual reflection of about 3% in visible spectrum (450-800 nm). As a top layer, TiO2 with a fixed thickness of 10 nm as a protective film was deposited. Based on transmittance and reflectance spectra, refractive indexes of TiO2 and SiO2 single layers were calculated. Ultra high vacuum atomic force microscope was used to characterize the surface properties of TiO2/SiO2 multilayer. Surface morphology revealed densely packed structure with grains of about 30 nm in size. Prepared samples were also investigated by nanoindentation to evaluate their protective performance against external hazards. Therefore, the hardness of the thin films was measured and it was equal to 9.34 GPa. Additionally, contact angle of prepared coatings has been measured to assess the wetting properties of the multilayer surface.

  16. Merits and Demerits of Transparent Conducting Magnetron Sputtered ZnO:Al, ITO and SnO2:F Thin Films for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Das, Rajesh; Das, Himadri Sekhar

    2016-06-01

    Transparent conducting ZnO:Al and indium tin oxide (ITO) thin films were deposited by magnetron sputtering under reactive environment. Both the transparent conducting oxide (TCO) films were exposed intentionally in hydrogen environment at 350 °C calcinations temperature to study the post treated TCO film's opto-electronic, structural as well as surface morphological properties. Electrical resistivity of both ZnO:Al, ITO and SnO2:F films are comparable (order of 10-4 Ω-cm), lowest sheet resistance are 8.5, 3.7 and 4.6 Ω/sq respectively and slightly improved after hydrogen exposure at 350 °C. Optical transmittance and internal texture of hydrogen environment exposed ZnO films remains invariant, but in case of ITO, SnO2:F films optical transmittance deteriorated drastically. Hexagonal wurtzite structure with (002) c-axis orientation is observed for pre- and post-hydrogen exposed ZnO films whereas internal texture as well as crystallographic orientation of ITO and SnO2:F films have significantly changed. Surface grains of ITO films have been significantly enhanced, but no such variations are observed in ZnO surface morphology. ZnO:Al and ITO films show unique plasmonic properties in near infrared transmittance due to free carrier generation in conduction band. Based on surface features/morphology, haze factor and internal texture light scattering mechanism is modeled.

  17. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

    SciTech Connect

    Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas; Jensen, Jens; Persson, Per O. A.; Birch, Jens; Hultman, Lars; Matloub, Ramin; Muralt, Paul; Kim, Yunseok

    2012-05-01

    Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

  18. Electrochromic properties of NiOx:H films deposited by DC magnetron sputtering for ITO/NiOx:H/ZrO2/WO3/ITO device

    NASA Astrophysics Data System (ADS)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhou, Yuliang; Wu, Zhonghou; Wang, Mei; Liu, Famin; Diao, Xungang

    2015-12-01

    NiOx:H thin films were deposited on ITO-coated glass by DC reactive magnetron sputtering at room temperature. The effects of the hydrogen content on the structure, morphologies, electrochemical properties, the stoichiometry and chemical states of NiOx:H thin films were systematically studied. In X-ray diffraction and atomic force microscopy analysis, the crystallinity of the films tends to be weakened when the flow amount ratio of Ar:O2:H2 equals 19:1:3 and as confirmed in electrochemical analysis, such relatively weak crystallinity is the main contributing factor to ion transportation. X-ray photoelectron spectroscopy reveals that the increase of the hydrogen contents results in a relatively lower binding energy exhibited in the Ni 2p spectra. The proportion of Ni2O3 in NiOx:H films increases from 22% at bleached state to 33% at colored state. A monolithic all-thin-film inorganic electrochromic device was fabricated with complementary configuration as ITO/NiOx:H/ZrO2/WO3/ITO. The electrochromic device with optimized NiOx:H thin films acting both as ion storage layer and proton-providing source displays high modulation efficiency of 68% at a fixed wavelength 550 nm.

  19. Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

    SciTech Connect

    Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

    2008-09-23

    We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.

  20. Effect of post-annealing temperature on structure and optical properties of Zn1- x Cd x O thin films synthesized by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sui, Yingrui; Song, Yanping; Yue, Yonggao; Xiao, Li; Wu, Yanjie; Lv, Shiquan; Liu, Xiaoyan; Yao, Bin; Yang, Jinghai

    2016-08-01

    The Zn1- x Cd x O ( x = 0.5) thin film was grown on quartz by the direct current reactive magnetron sputtering and post-annealing techniques. The influence of annealing temperature ( T a) on the structure and optical properties of Zn1- x Cd x O thin film was investigated by using X-ray diffraction (XRD), photoluminescence and optical absorbance measurements. The XRD results indicate that the as-grown Zn1- x Cd x O thin film is of highly (002)-preferred orientation and possessing the hexagonal wurtzite structure of pure ZnO, as the T a increases up from 300 to 600 °C, the phase segregation as cubic CdO was observed. The detailed microstructures of the Zn1- x Cd x O thin film were investigated by transmission electron microscopy. Moreover, with the increase of T a, the optical band gap of the Zn1- x Cd x O thin films increased from 2.08 to 3.14 eV. Correspondingly, the near-band-edge photoluminescence was tuned in a wide visible region from ~588 to 403 nm.

  1. Mechanical properties of Ta-Al-N thin films deposited by cylindrical DC magnetron sputtering: Influence of N2% in the gas mixture

    NASA Astrophysics Data System (ADS)

    Darabi, Elham; Moghaddasi, Naghmeh; Reza Hantehzadeh, Mohammad

    2016-06-01

    Ta-Al-N thin films were deposited by cylindrical DC magnetron sputtering on a stainless steel substrate under varying nitrogen flow ratios ( N2 with respect to N2 + Ar in the range of 1.5%-9%. The effect of the N2 content in the reactive gas mixture on crystalline structure, surface morphology, and mechanical properties of Ta-Al-N thin films was investigated. The amount of Al and Ta in deposited films was obtained by energy dispersive X-ray spectroscopy (EDX) analysis and films thickness was measured by surface step profilometer. X-ray diffraction analysis (XRD) revealed that the crystalline structure of the Ta-Al-N polycrystalline thin film is a mixture of TaAl, TaN, and AlN crystalline phases. Surface morphology, roughness, and grain size were investigated by atomic force microscopy (AFM). The nano hardness of Ta-Al-N thin films, measured by the nanoindentation method, was about 9GPa maximum for samples prepared under 3% N2 , and the friction coefficient, obtained by nanoscratch analysis, was approximately 0.2 for all Ta-Al-N thin films. Other results were found to be affected considerably by increasing the N2 amount.

  2. Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma

    SciTech Connect

    Konstantinidis, S.; Dauchot, J.P.; Ganciu, M.; Hecq, M.

    2006-01-09

    Transporting metallic ions from the magnetron cathode to the substrate is essential for an efficient thin-film deposition process. This letter examines how inductively coupled plasma superimposed onto a high-power pulsed magnetron discharge can influence the mobility of titanium ions. To this effect, time-resolved optical emission and absorption spectrometry are conducted and the current at the substrate is measured. With this new hybrid technique, ions are found to reach the substrate in two successive waves. Metal ions, only present in the second wave, are found to accelerate proportionally to the power supplied to the inductively coupled plasma. All the measurements in this study are made at 10 and 30 mTorr, with 10 {mu}s long pulses at the magnetron cathode.

  3. Effect of magnetic field strength on deposition rate and energy flux in a dc magnetron sputtering system

    SciTech Connect

    Ekpe, Samuel D.; Jimenez, Francisco J.; Field, David J.; Davis, Martin J.; Dew, Steven K.

    2009-11-15

    Variations in the magnetic field strongly affect the plasma parameters in a magnetron sputtering system. This in turn affects the throughput as well as the energy flux to the substrate. The variation in the magnetic field in this study, for a dc magnetron process, is achieved by shifting the magnet assembly slightly away from the target. Measurements of the plasma parameters show that while the electron density at the substrate increases with decrease in magnetic field, the electron temperature decreases. The cooling of the electron temperature is consistent with results reported elsewhere. The deposition rate per input magnetron power is found to increase slightly with the decrease in magnetic field for the process conditions considered in this study. Results suggest that the energy flux to the substrate tends to show a general decrease with the shift in the magnet assembly.

  4. Hydrogen and Cesium Monitor for H- Magnetron Sources

    SciTech Connect

    Tan, Cheng-Yang; Bollinger, Dan; Schupbach, Brian; Seiya, Kiyomi

    2014-07-01

    The relative concentration of cesium to hydrogen in the plasma of a H- magnetron source is an important parameter for reliable operations. If there is too much cesium, the surfaces of the source become contaminated with it and sparking occurs. If there is too little cesium then the plasma cannot be sustained. In order to monitor these two elements, a spectrometer has been built and installed on a test and operating source that looks at the plasma. It is hypothesized that the concentration of each element in the plasma is proportional to the intensity of their spectral lines.

  5. Propagation direction reversal of ionization zones in the transition between high and low current magnetron sputtering

    SciTech Connect

    School of Materials Science and Engineering, State Key Lab for Materials Processing and Die & Mold Technology, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Physics, University of California Berkeley, Berkeley, California 94720, USA; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA; Yang, Yuchen; Liu, Jason; Liu, Lin; Anders, André

    2014-12-11

    Past research has revealed the propagation of dense, asymmetric ionization zones in both high and low current magnetron discharges. Here we report about the direction reversal of ionization zone propagation as observed with fast cameras. At high currents, zones move in the E B direction with velocities of 103 to 104 m/s. However at lower currents, ionization zones are observed to move in the opposite, the -E B direction, with velocities ~;; 103 m/s. It is proposed that the direction reversal is associated with the local balance of ionization and supply of neutrals in the ionization zone.

  6. Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

    SciTech Connect

    Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru Ohno, Yasunori; Itoh, Masatoshi; Uhara, Yoshio; Miura, Tsutomu; Nakano, Hirofumi

    2015-11-15

    A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

  7. Velocity distribution of neutral species during magnetron sputtering by Fabry-Perot interferometry

    SciTech Connect

    Britun, N.; Han, J. G.; Oh, S.-G.

    2008-04-07

    The velocity distribution of a metallic neutral species sputtered in a dc magnetron discharge was measured using a planar Fabry-Perot interferometer and a hollow cathode lamp as a reference source. The measurement was performed under different angles of view relative to the target surface. The velocity distribution function in the direction perpendicular to the target becomes asymmetrical as the Ar pressure decreases, whereas it remains nearly symmetrical when the line of sight is parallel to the target surface. The average velocity of the sputtered Ti atoms was measured to be about 2 km/s.

  8. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  9. Use of an Injection Locked Magnetron to Drive a Superconducting RF Cavity

    SciTech Connect

    Haipeng Wang, Robert Rimmer, G. Davis, Imran Tahir, Amos Dexter, Greame Burt, Richard Carter

    2010-05-01

    The use of an injection locked CW magnetron to drive a 2.45 GHz superconducting RF cavity has been successfully demonstrated. With a locking power less than -27 dB with respect to the output and with a phase control system acting on the locking signal, cavity phase was accurately controlled for hours at a time without loss of lock whilst suppressing microphonics. The phase control accuracy achieved was 0.8 deg. r.m.s. The main contributing disturbance limiting ultimate phase control was power supply ripple from the low specification switch mode power supply used for the experiment.

  10. Reduction of Beam Current Noise in the FNAL Magnetron Ion Source

    SciTech Connect

    Bollinger, D. S.; Karns, P. R.; Tan, C. Y.

    2014-01-01

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2013. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. We expanded on those studies by trying mixtures ranging from 0.25%N, 99.75%H to 3%N, 97%H. The results of these studies in our test stand will be presented in this paper.

  11. Surface functionalization of nanostructured LaB6-coated Poly Trilobal fabric by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Zhang, Lin; Min, Guanghui; Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao

    2016-10-01

    Nanostructured LaB6 films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV-vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB6 film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  12. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    NASA Astrophysics Data System (ADS)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  13. Spoke rotation reversal in magnetron discharges of aluminium, chromium and titanium

    NASA Astrophysics Data System (ADS)

    Hecimovic, A.; Maszl, C.; Schulz-von der Gathen, V.; Böke, M.; von Keudell, A.

    2016-06-01

    The rotation of localised ionisation zones, i.e. spokes, in magnetron discharge are frequently observed. The spokes are investigated by measuring floating potential oscillations with 12 flat probes placed azimuthally around a planar circular magnetron. The 12-probe setup provides sufficient temporal and spatial resolution to observe the properties of various spokes, such as rotation direction, mode number and angular velocity. The spokes are investigated as a function of discharge current, ranging from 10 mA (current density 0.5 mA cm-2) to 140 A (7 A cm-2). In the range from 10 mA to 600 mA the plasma was sustained in DC mode, and in the range from 1 A to 140 A the plasma was pulsed in high-power impulse magnetron sputtering mode. The presence of spokes throughout the complete discharge current range indicates that the spokes are an intrinsic property of a magnetron sputtering plasma discharge. The spokes may disappear at discharge currents above 80 A for Cr, as the plasma becomes homogeneously distributed over the racetrack. Up to discharge currents of several amperes (the exact value depends on the target material), the spokes rotate in a retrograde \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 0.2-4 km s-1. Beyond a discharge current of several amperes, the spokes rotate in a \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 5-15 km s-1. The spoke rotation reversal is explained by a transition from Ar-dominated to metal-dominated sputtering that shifts the plasma emission zone closer to the target. The spoke itself corresponds to a region of high electron density and therefore to a hump in the electrical potential. The electric field around the spoke dominates the spoke rotation direction. At low power, the plasma is further away from the target and it is dominated by the electric field to the anode, thus retrograde \\mathbf{E}× \\mathbf{B} rotation. At high power, the plasma is closer to the target and it is

  14. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    SciTech Connect

    Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel; Anders, Andre

    2013-07-17

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

  15. R.F. magnetron sputtering of multilayered c-BN films on cemented carbide tool.

    PubMed

    Park, Sungtae; Jeong, Sehoon; Lee, Kwangmin

    2011-02-01

    A c-BN thin film was deposited using a B4C target in a r.f. magnetron sputtering system. The c-BN layer was coated with a TiAIN adhesion layer (approximately 2 microm), boron carbide (approximately 1 microm) and BCN (10 approximately 15 nm) nano-gradient layer system. The c-BN layers with thicknesses of more than 0.5 microm were successfully deposited onto cemented carbide substrates. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of sp3 BN bonds.

  16. Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

    SciTech Connect

    Yang, Yuchen; Tanaka, Koichi; Liu, Jason; Anders, André

    2015-03-23

    High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

  17. Direct-current magnetron fabrication of indium tin oxide/InP solar cells

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.; Wu, X.; Gessert, T. A.; Li, X.

    1988-01-01

    Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

  18. A W-band sixth-harmonic magnetron-type slotted peniotron

    SciTech Connect

    Hu Biao; Li Jiayin; Wu Xinhui; Li Tianming; Li Hao; Wang Haiyang; Zhao Xiaoyun

    2013-04-15

    This paper has numerically investigated operating characteristics of a w-band six-harmonic magnetron-type slotted peniotron with 7 vanes. With the new structure design, a high efficiency of 40% w-band 30 kW medium power microwave source has been achieved and the mode competition can be somewhat suppressed. The main advantage of such a peniotron, based on a permanent magnet, is that it can have much more compact size and lower cost, and its operation gap can be greatly reduced.

  19. RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

    2016-04-01

    The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

  20. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.