SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

SHI induced nano track polymer filters and characterization

NASA Astrophysics Data System (ADS)

Vijay, Y. K.

2009-07-01

Swift heavy ion irradiation produces damage in polymers in the form of latent tracks. Latent tracks can be enlarged by etching it in a suitable etchant and thus nuclear track etch membrane can be formed for gas permeation / purification in particular for hydrogen where the molecular size is very small. By applying suitable and controlled etching conditions well defined tracks can be formed for specific applications of the membranes. After etching gas permeation method is used for characterizing the tracks. In the present work polycarbonate (PC) of various thickness were irradiated with energetic ion beam at Inter University Accelerator Centre (IUAC), New Delhi. Nuclear tracks were modified by etching the PC in 6N NaOH at 60 (±1) °C from both sides for different times to produce track etch membranes. At critical etch time the etched pits from both the sides meet a rapid increase in gas permeation was observed. Permeability of hydrogen and carbon dioxide has been measured in samples etched for different times. The latent tracks produced by SHI irradiation in the track etch membranes show enhancement of free volume of the polymer. Nano filters are separation devices for the mixture of gases, different ions in the solution and isotopes and isobars separations. The polymer thin films with controlled porosity finding it self as best choice. However, the permeability and selectivity of these polymer based membrane filters are very important at the nano scale separation. The Swift Heavy Ion (SHI) induced nuclear track etched polymeric films with controlled etching have been attempted and characterized as nano scale filters.

Principles and applications of laser-induced liquid-phase jet-chemical etching

NASA Astrophysics Data System (ADS)

Stephen, Andreas; Metev, Simeon; Vollertsen, Frank

2003-11-01

In this treatment method laser radiation, which is guided from a coaxially expanding liquid jet-stream, locally initiates a thermochemical etching reaction on a metal surface, which leads to selective material removal at high resolution and quality of the treated surface as well as low thermal influence on the workpiece. Electrochemical investigations were performed under focused laser irradiation using a cw-Nd:YAG laser with a maximum power of 15 W and a simultaneous impact of the liquid jet-stream consisting of phosphoric acid with a maximum flow rate of 20 m/s. The time resolved measurements of the electrical potential difference against an electrochemical reference electrode were correlated with the specific processing parameters and corresponding etch rates to identify processing conditions for temporally stable and enhanced chemical etching reactions. Applications of laser-induced liquid-phase jet-chemical etching in the field of sensor technology, micromechanics and micrmoulding technology are presented. This includes the microstructuring of thin film systems, cutting of foils of shape memory alloys or the generation of structures with defined shape in bulk material.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Study of TLIPSS formation on different metals and alloys and their selective etching

NASA Astrophysics Data System (ADS)

Dostovalov, Alexandr V.; Korolkov, Victor P.; Terentiev, Vadim S.; Okotrub, Konstantin A.; Dultsev, Fedor N.; Nemykin, Anton; Babin, Sergey A.

2017-02-01

Experimental investigation of thermochemical laser-induced periodic surface structures (TLIPSS) formation on metal films (Ti, Cr, Ni, NiCr) at different processing conditions is presented. The hypothesis that the TLIPSS formation depends significantly on parabolic rate constant for oxide thin film growth is discussed. Evidently, low value of this parameter for Ni is the reason of TLIPSS absence on Ni and NiCr film with low Cr content. The effect of simultaneous ablative (with period ≍λ) and thermochemical (with period ≍λ) LIPSS formation was observed. The formation of structures after TLIPSS selective etching was demonstrated.

A review on plasma-etch-process induced damage of HgCdTe

NASA Astrophysics Data System (ADS)

Liu, Lingfeng; Chen, Yiyu; Ye, Zhenhua; Ding, Ruijun

2018-05-01

Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.

Investigation of Bearing Axial Cracking: Benchtop and Full-Scale Test Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Keller, Jonathan A.; Gould, Benjamin; Greco, Aaron

2017-08-16

The most common failure mode in wind turbine gearboxes is axial cracking in intermediate and high-speed-stage bearings, also commonly called white-etching cracks (WECs). Although these types of cracks have been reported for over a decade, the conditions leading to WECs, the process by which this failure culminates, and the reasons for their apparent prevalence in wind turbine gearboxes are all highly debated. This paper summarizes the state of a multipronged research effort to examine the causes of WECs in wind turbine gearbox bearings. Recent efforts have recreated WECs on a benchtop test rig in highly loaded sliding conditions, wherein itmore » was found that the formation of a dark etching microstructure precedes the formation of a crack, and a crack precedes the formation of white-etching microstructure. A cumulative frictional sliding energy criterion has been postulated to predict the presence of WECs. Bearing loads have also been measured and predicted in steady state and transient drivetrain operations in dynamometer testing. In addition, both loads and sliding at full scale will be measured in planned uptower drivetrain testing. If the cumulative frictional sliding energy is the dominant mechanism that causes WECs, understanding the amount of frictional sliding energy that wind turbine bearings are subjected to in typical operations is the next step in the investigation. If highly loaded sliding conditions are found uptower, similar to the examined benchtop levels, appropriate mitigation solutions can be examined, ranging from new bearing coatings and improved lubricants to changes in gearbox designs and turbine operations.« less

Selective etching of injection molded zirconia-toughened alumina: Towards osseointegrated and antibacterial ceramic implants.

PubMed

Flamant, Quentin; Caravaca, Carlos; Meille, Sylvain; Gremillard, Laurent; Chevalier, Jérôme; Biotteau-Deheuvels, Katia; Kuntz, Meinhard; Chandrawati, Rona; Herrmann, Inge K; Spicer, Christopher D; Stevens, Molly M; Anglada, Marc

2016-12-01

Due to their outstanding mechanical properties and excellent biocompatibility, zirconia-toughened alumina (ZTA) ceramics have become the gold standard in orthopedics for the fabrication of ceramic bearing components over the last decade. However, ZTA is bioinert, which hampers its implantation in direct contact with bone. Furthermore, periprosthetic joint infections are now the leading cause of failure for joint arthroplasty prostheses. To address both issues, an improved surface design is required: a controlled micro- and nano-roughness can promote osseointegration and limit bacterial adhesion whereas surface porosity allows loading and delivery of antibacterial compounds. In this work, we developed an integrated strategy aiming to provide both osseointegrative and antibacterial properties to ZTA surfaces. The micro-topography was controlled by injection molding. Meanwhile a novel process involving the selective dissolution of zirconia (selective etching) was used to produce nano-roughness and interconnected nanoporosity. Potential utilization of the porosity for loading and delivery of antibiotic molecules was demonstrated, and the impact of selective etching on mechanical properties and hydrothermal stability was shown to be limited. The combination of injection molding and selective etching thus appears promising for fabricating a new generation of ZTA components implantable in direct contact with bone. Zirconia-toughened alumina (ZTA) is the current gold standard for the fabrication of orthopedic ceramic components. In the present work, we propose an innovative strategy to provide both osseointegrative and antibacterial properties to ZTA surfaces: we demonstrate that injection molding allows a flexible design of surface micro-topography and can be combined with selective etching, a novel process that induces nano-roughness and surface interconnected porosity without the need for coating, avoiding reliability issues. These surface modifications have the potential to improve osseointegration. Furthermore, our results show that the porosity can be used for drug delivery and suggest that the etched surface could reduce bacterial adhesion. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Enhanced light absorption of solar cells and photodetectors by diffraction

DOEpatents

Zaidi, Saleem H.; Gee, James M.

2005-02-22

Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are shown to improve performance of solar cells. Surface reflection can be tailored for either broadband, or narrow-band spectral absorption. Enhanced absorption is achieved by efficient optical coupling into obliquely propagating transmitted diffraction orders. Subwavelength one-dimensional structures are designed for polarization-dependent, wavelength-selective absorption in solar cells and photodetectors, while two-dimensional structures are designed for polarization-independent, wavelength-selective absorption therein. Suitable one and two-dimensional subwavelength periodic structures can also be designed for broadband spectral absorption in solar cells and photodetectors. If reactive ion etching (RIE) processes are used to form the grating, RIE-induced surface damage in subwavelength structures can be repaired by forming junctions using ion implantation methods. RIE-induced surface damage can also be removed by post RIE wet-chemical etching treatments.

Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.

PubMed

Li, Yantao; Hu, Weida; Ye, Zhenhua; Chen, Yiyu; Chen, Xiaoshuang; Lu, Wei

2017-04-01

Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg_1-xCd_xTe (x=0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Localized etching of polymer films using an atmospheric pressure air microplasma jet

NASA Astrophysics Data System (ADS)

Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

2015-01-01

A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

PubMed

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Effect of nitrogen-containing plasma on adherence, friction, and wear of radiofrequency-sputtered titanium carbide coatings

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1979-01-01

Friction and wear experiments on 440C steel surfaces that were rf sputtered with titanium carbide when a small percentage of nitrogen was added to the plasma were conducted. Both X-ray photoelectron spectroscopy and X-ray diffraction were used to analyze the resultant coatings. Results indicate that the small partial pressure of nitrogen (approximately 0.5 percent) markedly improves the adherence, friction, and wear properties when compared with coatings applied to sputter-etched surfaces, oxidized surfaces, or in the presence of a small oxygen partial pressure. The improvements are related to the formation of an interface containing a mixture of the nitrides of titanium and iron, which are harder than their corresponding oxides.

A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors

NASA Astrophysics Data System (ADS)

Wang, Peng; Wang, Yueming; Wu, Mingzai; Ye, Zhenhua

2018-06-01

Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 μm is obtained by comparing the LBIC profile and the scanning electron microscopy image of etched sample. This finding will guide us to nondestructively identify the distributions of the etching damages in large scale HgCdTe micro-mesa.

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyungjoo; Zhu Weiye; Liu Lei

2013-05-15

Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaNmore » etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.« less

Dopant Selective Reactive Ion Etching of Silicon Carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert (Inventor)

2016-01-01

A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

Selective dry etching of silicon containing anti-reflective coating

NASA Astrophysics Data System (ADS)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Characterization of the Micro Textures in a Friction Stir Weld

NASA Technical Reports Server (NTRS)

Schneider, Judy; Nunes, Arthur C.

2004-01-01

In friction stir welding (FSW), a rotating threaded pin tool is inserted into a weld seam and literally stirs the edges of the seam together. The Dynamically-Recrystallized-Zone (DXZ) of a polished and etched FSW cross-section exhibits contrasting bands (the "onion-ring" structure), the origins of which are unclear. An orientation image mapping (OIM) study suggests that the corresponding bands may correspond respectively to a "straight-through" current of metal bypassing the pin tool in a single rotation or less and a "maelstrom" current rotating a number of times around the pin tool.

Method of inducing differential etch rates in glow discharge produced amorphous silicon

DOEpatents

Staebler, David L.; Zanzucchi, Peter J.

1980-01-01

A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

New frontiers of atomic layer etching

NASA Astrophysics Data System (ADS)

Sherpa, Sonam D.; Ranjan, Alok

2018-03-01

Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or quasicontinuous plasma etching. These benefits include (1) independent control of ion energy, ion flux, and radical flux, (2) flux-independent etch rate that mitigates the iso-dense loading effects, and (3) ability to control the etch rate with atomic or nanoscale precision. In addition to these benefits, we demonstrate an area-selective etching for maskless lithography as a new frontier of ALE. In this paper, area-selective etching refers to the confinement of etching into the specific areas of the substrate. The concept of area-selective etching originated during our studies on quasi-ALE of silicon nitride which consists of sequential exposure of silicon nitride to hydrogen and fluorinated plasma. The findings of our studies reported in this paper suggest that it may be possible to confine the etching into specific areas of silicon nitride without using any mask by replacing conventional hydrogen plasma with a localized source of hydrogen ions.

Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

PubMed

Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

2016-10-01

The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p < 0.05), where FUE (36.83 ± 4.9 MPa) showed the highest bond strength values and SBUWE (18.40 ± 2.2 MPa) showed the lowest bond strength values. The analysis of adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

DOE PAGES

Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; ...

2015-01-28

We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhancedmore » Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.« less

Overcoming etch challenges related to EUV based patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

2017-04-01

Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for < 40 nm pitch applications. The confluence of high cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

Study of Dimple Effect on the Friction Characteristics of a Journal Bearing using Taguchi Method

NASA Astrophysics Data System (ADS)

Murthy, A. Amar; Raghunandana, Dr.

2018-02-01

The effect of producing dimples using chemically etched techniques or by machining process on the surface of a journal bearing bushing to reduce the friction using Taguchi method is investigated. The data used in the present analysis is based on the results obtained by the series of experiments conducted to study the dimples effect on the Stribeck curve. It is statistically proved that producing dimples on the bushing surface of a journal bearing has significant effect on the friction coefficient when used with light oils. Also it is seen that there is an interaction effect between speeds-load and load-dimples. Hence the interaction effect, which are usually neglected should be considered during actual experiments that significantly contributes in reducing the friction in mixed lubrication regime. The experiments, if were conducted after Taguchi method, then the number of experiments would have been reduced to half of the actual set of experiments that were essentially conducted.

Localized Mechanical Properties of Friction Stir Processed Sensitized 5456-H116 Al

DTIC Science & Technology

2013-04-01

5  Tensile Testing and Fractography ...boundaries and sensitization was performed using Barker’s reagent and a 40% phosphoric etch respectively. Post-fracture fractography was performed...Tensile Testing and Fractography As the level of sensitization is reduced or unobserved within the stir zone and up to 12mm from the edges, micro-tensile

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Fabrication and Characterization of Gecko-inspired Fibrillar Adhesive

NASA Astrophysics Data System (ADS)

Kim, Yongkwan

Over the last decade, geckos' remarkable ability to stick to and climb surfaces found in nature has motivated a wide range of scientific interest in engineering gecko-mimetic surface for various adhesive and high friction applications. The high adhesion and friction of its pads have been attributed to a complex array of hairy structures, which maximize surface area for van der Waals interaction between the toes and the counter-surface. While advances in micro- and nanolithography technique have allowed fabrication of increasingly sophisticated gecko mimetic surfaces, it remains a challenge to produce an adhesive as robust as that of the natural gecko pads. In order to rationally design gecko adhesives, understanding the contact behavior of fibrillar interface is critical. The first chapter of the dissertation introduces gecko adhesion and its potential applications, followed by a brief survey of gecko-inspired adhesives. Challenges that limit the performance of the current adhesives are presented. In particular, it is pointed out that almost all testing of gecko adhesives have been on clean, smooth glass, which is ideal for adhesion due to high surface energy and low roughness. Surfaces in application are more difficult to stick to, so the understanding of failure modes in low energy and rough surfaces is important. The second chapter presents a fabrication method for thermoplastic gecko adhesive to be used for a detailed study of fibrillar interfaces. Low-density polyethylene nanofibers are replicated from a silicon nanowire array fabricated by colloidal lithography and metal-catalyzed chemical etching. This process yields a highly ordered array of nanofibers over a large area with control over fiber diameter, length, and number density. The high yield and consistency of the process make it ideal for a systematic study on factors that affect adhesion and friction of gecko adhesives. The following three chapters examine parameters that affect macroscale friction of fibrillar adhesives. Basic geometric factors, namely fiber length and diameter, are optimized on smooth glass for high friction. The test surfaces are then processed to intentionally introduce roughness or lower the surface energy in a systematic and quantifiable manner, so that the failure mechanisms of the adhesive can be investigated in detail. In these studies, observed macroscale friction is related to the nano-scale contact behavior with simple mechanical models to establish criteria to ensure high performance of fibrillar adhesives. Chapter 6 presents various methods to produce more complex fiber structures. The metal-assisted chemical etching of silicon nanowires is studied in detail, where the chemical composition of the etching bath can be varied to produce clumped, tapered, tilted, and curved nanowires, which provide interesting templates for molding and are potentially useful for applications in various silicon nanowire devices. Hierarchical fiber structures are fabricated by a few different methods, as well as composite structures where the fibers are embedded in another material. A way to precisely control tapering of microfibers is demonstrated, and the effect of tapering on macroscale friction is studied in detail. The final chapter summarizes the dissertation and suggests possible future works for both further investigating fibrillar interfaces and improving the current gecko adhesive.

Nanofabrication of insulated scanning probes for electromechanical imaging in liquid solutions

PubMed Central

Noh, Joo Hyon; Nikiforov, Maxim; Kalinin, Sergei V.; Vertegel, Alexey A.; Rack, Philip D.

2011-01-01

In this paper, the fabrication and electrical and electromechanical characterization of insulated scanning probes have been demonstrated in liquid solutions. The silicon cantilevers were sequentially coated with chromium and silicon dioxide, and the silicon dioxide was selectively etched at tip apex using focused electron beam induced etching (FEBIE) with XeF2 The chromium layer acted not only as the conductive path from the tip, but also as an etch resistant layer. This insulated scanning probe fabrication process is compatible with any commercial AFM tip and can be used to easily tailor the scanning probe tip properties because FEBIE does not require lithography. The suitability of the fabricated probes is demonstrated by imaging of standard topographical calibration grid as well as piezoresponse force microscopy (PFM) and electrical measurements in ambient and liquid environments. PMID:20702930

Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

NASA Astrophysics Data System (ADS)

Brakensiek, Nickolas; Xu, Kui; Sweat, Daniel; Hockey, Mary Ann

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Liquid-Assisted Femtosecond Laser Precision-Machining of Silica.

PubMed

Cao, Xiao-Wen; Chen, Qi-Dai; Fan, Hua; Zhang, Lei; Juodkazis, Saulius; Sun, Hong-Bo

2018-04-28

We report a systematical study on the liquid assisted femtosecond laser machining of quartz plate in water and under different etching solutions. The ablation features in liquid showed a better structuring quality and improved resolution with 1/3~1/2 smaller features as compared with those made in air. It has been demonstrated that laser induced periodic structures are present to a lesser extent when laser processed in water solutions. The redistribution of oxygen revealed a strong surface modification, which is related to the etching selectivity of laser irradiated regions. Laser ablation in KOH and HF solution showed very different morphology, which relates to the evolution of laser induced plasma on the formation of micro/nano-features in liquid. This work extends laser precision fabrication of hard materials. The mechanism of strong absorption in the regions with permittivity (epsilon) near zero is discussed.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Characterization and modeling of low energy ion-induced damage in III-V semiconductors

NASA Astrophysics Data System (ADS)

Chen, Ching-Hui

1997-11-01

Low energy ion-induced damage (sub-keV) created during dry etching processes can extend quite deeply into materials. A systematic study on the deep penetration of dry etch-induced damage is necessary to improve device performance and helpful in further understanding the nature of defect propagation in semiconductors. In this study, a phenomenological model of dry etching damage that includes both effects of ion channeling and defect diffusion has been developed. It underscores that in addition to ion channeling, enhanced defect diffusion also plays an important role in establishing the damage profile. Further, the enhanced diffusion of dry etch- induced damage was experimentally observed for the first time by investigating the influences of concurrent above- bandgap laser illumination and low energy Ar+ ion bombardment on the damage profiles of GaAs/AlGaAs and InP-GaAs/InP heterostructures. The results indicate that non-radiative recombination of electron and hole pairs at defect sites is responsible for the observed radiation enhanced diffusion. DLTS measurements are also employed to characterize the nature of the enhanced diffusion in n-GaAs and reveal that a major component of the ion- induced defects is associated with primary point defects. Using the better understanding of the damage propagation in dry etched materials, a thin layer of low temperature grown GaAs (~200A) was utilized to stop defect propagation during dry etching process. This approach has been successfully applied to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Finally, some future experiments are proposed and conceptually described, which would further clarify some of the many outstanding issues in the understanding and mitigation of etch- induced damage.

Comparative study of resist stabilization techniques for metal etch processing

NASA Astrophysics Data System (ADS)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

NASA Astrophysics Data System (ADS)

Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

2015-01-01

A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films.

PubMed

Flynn, Shauna P; Bogan, Justin; Lundy, Ross; Khalafalla, Khalafalla E; Shaw, Matthew; Rodriguez, Brian J; Swift, Paul; Daniels, Stephen; O'Connor, Robert; Hughes, Greg; Kelleher, Susan M

2018-08-31

Self-assembling block copolymer (BCP) patterns are one of the main contenders for the fabrication of nanopattern templates in next generation lithography technology. Transforming these templates to hard mark materials is key for pattern transfer and in some cases, involves selectively removing one block from the nanopattern. For poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP), a high χ BCP system which could be potentially incorporated into semiconductor nanofabrication, this selective removal is predominantly done by a wet etch/activation process. Conversely, this process has numerous disadvantages including lack of control and high generation of waste leading to high cost. For these reasons, our motivation was to move away from the wet etch process and optimise a dry etch which would overcome the limitations associated with the activation process. The work presented herein shows the development of a selective plasma etch process for the removal of P4VP cores from PS-b-P4VP nanopatterned film. Results have shown that a nitrogen reactive ion etch plasma has a selectivity for P4VP of 2.2:1 and suggest that the position of the nitrogen in the aromatic ring of P4VP plays a key role in this selectivity. In situ plasma etching and x-ray photoelectron spectrometry measurements were made without breaking vacuum, confirming that the nitrogen plasma has selectivity for removal of P4VP over PS.

Effect of Plasma Treatment on Air and Water-Vapor Permeability of Bamboo Knitted Fabric

NASA Astrophysics Data System (ADS)

Prakash, C.; Ramakrishnan, G.; Chinnadurai, S.; Vignesh, S.; Senthilkumar, M.

2013-11-01

In this paper, the effects of oxygen and atmospheric plasma on air and water-vapor permeability properties of single jersey bamboo fabric have been investigated. The changes in these properties are believed to be related closely to the inter-fiber and inter-yarn friction force induced by the plasma treatments. The outcomes showed that the water-vapor permeability increased, although the air permeability decreased along with the plasma treatments. The SEM images clearly showed that the plasma modified the fiber surface outwardly. The results showed that the atmospheric plasma has an etching effect and increases the functionality of a bamboo surface, which is evident from SEM and FTIR-ATR analysis. These results reveal that atmospheric pressure plasma treatment is an effective method to improve the performance of bamboo fabric. Statistical analysis also indicates that the results are significant for air permeability and water-vapor permeability of the plasma-treated bamboo fabric.

Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

The influence of surface properties of plasma-etched polydimethylsiloxane (PDMS) on cell growth and morphology.

PubMed

Pennisi, Cristian P; Zachar, Vladimir; Gurevich, Leonid; Patriciu, Andrei; Struijk, Johannes J

2010-01-01

Polydimethylsiloxane (PDMS) or silicone rubber is a widely used implant material. Approaches to promote tissue integration to PDMS are desirable to avoid clinical problems associated with sliding and friction between tissue and implant. Plasma-etching is a useful way to control cell behavior on PDMS without additional coatings. In this work, different plasma processing conditions were used to modify the surface properties of PDMS substrates. Surface nanotopography and wettability were measured to study their effect on in vitro growth and morphology of fibroblasts. While fluorinated plasma treatments produced nanorough hydrophobic and superhydrophobic surfaces that had negative or little influences on cellular behavior, water vapor/oxygen plasma produced smooth hydrophillic surfaces that enhanced cell growth.

The K 2S 2O 8-KOH photoetching system for GaN

NASA Astrophysics Data System (ADS)

Weyher, J. L.; Tichelaar, F. D.; van Dorp, D. H.; Kelly, J. J.; Khachapuridze, A.

2010-09-01

A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K 2S 2O 8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were defined: defect-selective etching (denoted by KSO-D) and polishing (KSO-P). Both photoetching methods can be used under open-circuit (electroless) conditions. Well-defined dislocation-related etch whiskers are formed during KSO-D etching. All types of dislocations are revealed, and this was confirmed by cross-sectional TEM examination of the etched samples. Extended electrically active defects are also clearly revealed. The known relationship between etch rate and carrier concentration for photoetching of GaN in KOH solutions was confirmed for KSO-D etch using Raman measurements. It is shown that during KSO-P etching diffusion is the rate-limiting step, i.e. this etch is suitable for polishing of GaN. Some constraints of the KSO etching system for GaN are discussed and peculiar etch features, so far not understood, are described.

Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching

DOE PAGES

Martin, Aiden A.; Bahm, Alan; Bishop, James; ...

2015-12-15

Here, we report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. Therefore, we, modify established theory such that it explains our results and remains universally applicable to EBIE. Furthermore, the patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material.

Selectively-etched nanochannel electrophoretic and electrochemical devices

DOEpatents

Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

2004-11-16

Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

Selectively-etched nanochannel electrophoretic and electrochemical devices

DOEpatents

Surh, Michael P [Livermore, CA; Wilson, William D [Pleasanton, CA; Barbee, Jr., Troy W.; Lane, Stephen M [Oakland, CA

2006-06-27

Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

A plasmaless, photochemical etch process for porous organosilicate glass films

NASA Astrophysics Data System (ADS)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

Friction-induced surface activity of some hydrocarbons with clean and oxide-covered iron

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1973-01-01

Sliding friction studies were conducted on a clean and oxide-covered iron surface with exposure of that surface to various hydrocarbons. The hydrocarbons included ethane, ethylene ethyl chloride, methyl chloride, and vinyl chloride. Auger cylindrical mirror analysis was used to follow interactions of the hydrocarbon with the iron surface. Results with vinyl chloride indicate friction induced surface reactivity, adsorption to surface oxides, friction sensitivity to concentration and polymerization. Variation in the loads employed influence adsorption and accordingly friction. In contrast with ethyl and vinyl chloride, friction induced surface reactivity was not observed with ethane and ethylene.

Reflection spectra of etched FBGs under the influence of axial contraction and stress-induced index change.

PubMed

Yang, Hang-Zhou; Lim, Kok-Sing; Qiao, Xue-Guang; Chong, Wu-Yi; Cheong, Yew-Ken; Lim, Weng-Hong; Lim, Wei-Sin; Ahmad, Harith

2013-06-17

We present a new theoretical model for the broadband reflection spectra of etched FBGs which includes the effects of axial contraction and stress-induced index change. The reflection spectra of the etched FBGs with several different taper profiles are simulated based on the proposed model. In our observation, decaying exponential profile produces a broadband reflection spectrum with good uniformity over the range of 1540-1560 nm. An etched FBG with similar taper profile is fabricated and the experimental result shows good agreement with the theoretical model.

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sintonen, Sakari, E-mail: sakari.sintonen@aalto.fi; Suihkonen, Sami; Jussila, Henri

2014-08-28

The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and themore » SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.« less

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness,more » etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching showed that the Si fin (source/drain region) was directly damaged by high energy hydrogen and had local variations in the damage distribution, which may lead to a shift in the threshold voltage and the off-state leakage current. Therefore, side-wall etching and ion implantation processes must be carefully designed by considering the Si damage distribution to achieve low damage and high transistor performance for complementary metal–oxide–semiconductor devices.« less

On the torque and wear behavior of selected thin film MOS2 lubricated gimbal bearings

NASA Technical Reports Server (NTRS)

Bohner, John J.; Conley, Peter L.

1988-01-01

During the thermal vacuum test phase of the GOES 7 spacecraft, the primary scan mirror system exhibited unacceptably high drive friction. The observed friction was found to correlate with small misalignments in the mirror structure and unavoidable loads induced by the vehicle spin. An intensive effort to understand and document the performance of the scan mirror bearing system under these loads is described. This effort involved calculation of the bearing loads and expected friction torque, comparison of the computed values to test data, and verification of the lubrication system performance and limitations under external loads. The study culminated in a successful system launch in February of 1987. The system has operated as predicted since that time.

Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

NASA Astrophysics Data System (ADS)

Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

2002-07-01

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

NASA Astrophysics Data System (ADS)

Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

2014-03-01

Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} frommore » the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to SiO{sub 2}. The comparison of C{sub 4}F{sub 8} and CHF{sub 3} only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions, precursor chemistry has a weak impact on etching selectivity. Surface chemistry analysis shows that surface fluorination and FC reduction take place during a single ALE cycle for FC depleted conditions. A fluorine rich carbon layer was observed on the Si{sub 3}N{sub 4} surface after ALE processes for which FC accumulation takes place. The angle resolved-XPS thickness calculations confirmed the results of the ellipsometry measurements in all cases.« less

Composition/bandgap selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, Carol I. H.; Dishman, James L.

1987-01-01

A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

High temperature low friction surface coating

DOEpatents

Bhushan, Bharat

1980-01-01

A high temperature, low friction, flexible coating for metal surfaces which are subject to rubbing contact includes a mixture of three parts graphite and one part cadmium oxide, ball milled in water for four hours, then mixed with thirty percent by weight of sodium silicate in water solution and a few drops of wetting agent. The mixture is sprayed 12-15 microns thick onto an electro-etched metal surface and air dried for thirty minutes, then baked for two hours at 65.degree. C. to remove the water and wetting agent, and baked for an additional eight hours at about 150.degree. C. to produce the optimum bond with the metal surface. The coating is afterwards burnished to a thickness of about 7-10 microns.

Method of sputter etching a surface

DOEpatents

Henager, Jr., Charles H.

1984-01-01

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

Method of sputter etching a surface

DOEpatents

Henager, C.H. Jr.

1984-02-14

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

Modeling of block copolymer dry etching for directed self-assembly lithography

NASA Astrophysics Data System (ADS)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.

PubMed

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-23

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H 2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

NASA Astrophysics Data System (ADS)

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-01

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Method and system for optical figuring by imagewise heating of a solvent

DOEpatents

Rushford, Michael C.

2005-08-30

A method and system of imagewise etching the surface of a substrate, such as thin glass, in a parallel process. The substrate surface is placed in contact with an etchant solution which increases in etch rate with temperature. A local thermal gradient is then generated in each of a plurality of selected local regions of a boundary layer of the etchant solution to imagewise etch the substrate surface in a parallel process. In one embodiment, the local thermal gradient is a local heating gradient produced at selected addresses chosen from an indexed array of addresses. The activation of each of the selected addresses is independently controlled by a computer processor so as to imagewise etch the substrate surface at region-specific etch rates. Moreover, etching progress is preferably concurrently monitored in real time over the entire surface area by an interferometer so as to deterministically control the computer processor to image-wise figure the substrate surface where needed.

Effect of helium ion beam treatment on wet etching of silicon dioxide

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Grigoryev, E. A.; Sharov, T. V.; Baraban, A. P.

2018-03-01

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm-2 to 1017 cm-2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Muraki, Yu; Karahashi, Kazuhiro

2015-07-15

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +}more » or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.« less

Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

PubMed

Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

2016-04-10

HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm^-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

Composition/bandgap selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, C.I.H.; Dishman, J.L.

1985-10-11

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; Vignesparamoorthy, Sivaruban; Mueller, Carl; VanKeuls, Fred; Warner, Joseph; Miranda, Felix A.

2001-01-01

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

PubMed

Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

2017-06-21

The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

Friction Surface Treatment Selection: Aggregate Properties, Surface Characteristics, Alternative Treatments, and Safety Effects

DOT National Transportation Integrated Search

2017-07-01

This study aimed to evaluate the long term performance of the selected surface friction treatments, including high friction surface treatment (HFST) using calcined bauxite and steel slag, and conventional friction surfacing, in particular pavement pr...

Synthesis and electroplating of high resolution insulated carbon nanotube scanning probes for imaging in liquid solutions

PubMed Central

Roberts, N.A.; Noh, J.H.; Lassiter, M.G.; Guo, S.; Kalinin, S.V.; Rack, P.D.

2012-01-01

High resolution and isolated scanning probe microscopy (SPM) is in demand for continued development of energy storage and conversion systems involving chemical reactions at the nanoscale as well as an improved understanding of biological systems. Carbon nanotubes (CNTs) have large aspect ratios and, if leveraged properly, can be used to develop high resolution SPM probes. Isolation of SPM probes can be achieved by deposited a dielectric film and selectively etching at the apex of the probe. In this paper the fabrication of a high resolution and isolated SPM tip is demonstrated using electron beam induced etching of a dielectric film deposited onto an SPM tip with an attached CNT at the apex. PMID:22433664

Synthesis and electroplating of high resolution insulated carbon nanotube scanning probes for imaging in liquid solutions.

PubMed

Roberts, N A; Noh, J H; Lassiter, M G; Guo, S; Kalinin, S V; Rack, P D

2012-04-13

High resolution and isolated scanning probe microscopy (SPM) is in demand for continued development of energy storage and conversion systems involving chemical reactions at the nanoscale as well as an improved understanding of biological systems. Carbon nanotubes (CNTs) have large aspect ratios and, if leveraged properly, can be used to develop high resolution SPM probes. Isolation of SPM probes can be achieved by depositing a dielectric film and selectively etching at the apex of the probe. In this paper the fabrication of a high resolution and isolated SPM tip is demonstrated using electron beam induced etching of a dielectric film deposited onto an SPM tip with an attached CNT at the apex.

Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060; Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn

2016-08-01

We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to themore » fabrication of nanodevices and nanosurfaces.« less

Friction in Total Hip Joint Prosthesis Measured In Vivo during Walking

PubMed Central

Damm, Philipp; Dymke, Joern; Ackermann, Robert; Bender, Alwina; Graichen, Friedmar; Halder, Andreas; Beier, Alexander; Bergmann, Georg

2013-01-01

Friction-induced moments and subsequent cup loosening can be the reason for total hip joint replacement failure. The aim of this study was to measure the in vivo contact forces and friction moments during walking. Instrumented hip implants with Al2O3 ceramic head and an XPE inlay were used. In vivo measurements were taken 3 months post operatively in 8 subjects. The coefficient of friction was calculated in 3D throughout the whole gait cycle, and average values of the friction-induced power dissipation in the joint were determined. On average, peak contact forces of 248% of the bodyweight and peak friction moments of 0.26% bodyweight times meter were determined. However, contact forces and friction moments varied greatly between individuals. The friction moment increased during the extension phase of the joint. The average coefficient of friction also increased during this period, from 0.04 (0.03 to 0.06) at contralateral toe off to 0.06 (0.04 to 0.08) at contralateral heel strike. During the flexion phase, the coefficient of friction increased further to 0.14 (0.09 to 0.23) at toe off. The average friction-induced power throughout the whole gait cycle was 2.3 W (1.4 W to 3.8 W). Although more parameters than only the synovia determine the friction, the wide ranges of friction coefficients and power dissipation indicate that the lubricating properties of synovia are individually very different. However, such differences may also exist in natural joints and may influence the progression of arthrosis. Furthermore, subjects with very high power dissipation may be at risk of thermally induced implant loosening. The large increase of the friction coefficient during each step could be caused by the synovia being squeezed out under load. PMID:24260114

Friction in total hip joint prosthesis measured in vivo during walking.

PubMed

Damm, Philipp; Dymke, Joern; Ackermann, Robert; Bender, Alwina; Graichen, Friedmar; Halder, Andreas; Beier, Alexander; Bergmann, Georg

2013-01-01

Friction-induced moments and subsequent cup loosening can be the reason for total hip joint replacement failure. The aim of this study was to measure the in vivo contact forces and friction moments during walking. Instrumented hip implants with Al2O3 ceramic head and an XPE inlay were used. In vivo measurements were taken 3 months post operatively in 8 subjects. The coefficient of friction was calculated in 3D throughout the whole gait cycle, and average values of the friction-induced power dissipation in the joint were determined. On average, peak contact forces of 248% of the bodyweight and peak friction moments of 0.26% bodyweight times meter were determined. However, contact forces and friction moments varied greatly between individuals. The friction moment increased during the extension phase of the joint. The average coefficient of friction also increased during this period, from 0.04 (0.03 to 0.06) at contralateral toe off to 0.06 (0.04 to 0.08) at contralateral heel strike. During the flexion phase, the coefficient of friction increased further to 0.14 (0.09 to 0.23) at toe off. The average friction-induced power throughout the whole gait cycle was 2.3 W (1.4 W to 3.8 W). Although more parameters than only the synovia determine the friction, the wide ranges of friction coefficients and power dissipation indicate that the lubricating properties of synovia are individually very different. However, such differences may also exist in natural joints and may influence the progression of arthrosis. Furthermore, subjects with very high power dissipation may be at risk of thermally induced implant loosening. The large increase of the friction coefficient during each step could be caused by the synovia being squeezed out under load.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

PubMed

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Electron-hole pair effects in methane dissociative chemisorption on Ni(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Xuan; Jiang, Bin, E-mail: bjiangch@ustc.edu.cn; Juaristi, J. Iñaki

The dissociative chemisorption of methane on metal surfaces has attracted much attention in recent years as a prototype of gas-surface reactions in understanding the mode specific and bond selective chemistry. In this work, we systematically investigate the influence of electron-hole pair excitations on the dissociative chemisorption of CH{sub 4}/CH{sub 3}D/CHD{sub 3} on Ni(111). The energy dissipation induced by surface electron-hole pair excitations is modeled as a friction force introduced in the generalized Langevin equation, in which the independent atomic friction coefficients are determined within the local-density friction approximation. Quasi-classical trajectory calculations for CH{sub 4}/CH{sub 3}D/CHD{sub 3} have been carried outmore » on a recently developed twelve-dimensional potential energy surface. Comparing the dissociation probabilities obtained with and without friction, our results clearly indicate that the electron-hole pair effects are generally small, both on absolute reactivity of each vibrational state and on the mode specificity and bond selectivity. Given similar observations in both water and methane dissociation processes, we conclude that electron-hole pair excitations would not play an important role as long as the reaction is direct and the interaction time between the molecule and metal electrons is relatively short.« less

Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

NASA Astrophysics Data System (ADS)

Hatayama, Tomoaki; Tamura, Tetsuya; Yano, Hiroshi; Fuyuki, Takashi

2012-07-01

The etch pit shape of an off-angled 4H-SiC Si-face formed by chlorine trifluoride (ClF3) in nitrogen (N2) ambient has been studied. One type of etch pit with a crooked hexagonal shape was formed at an etching temperature below 500 °C. The angle of the etch pit measured from a cross-sectional atomic force microscopy image was about 10° from the [11bar 20] view. The dislocation type of the etch pit was discussed in relation to the etch pit shape and an electron-beam-induced current image.

Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ankur; Kushner, Mark J.; Iowa State University, Department of Electrical and Computer Engineering, 104 Marston Hall, Ames, Iowa 50011-2151

2005-09-15

The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveformmore » we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO{sub 2} in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture.« less

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

DOEpatents

Martinez, Robert J.; Rye, Robert R.

1991-01-01

A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.

Selective dry etching of III-V nitrides in Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}/Ar, ICi/Ar, and IBr/Ar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vartuli, C.B.; Pearton, S.J.; MacKenzie, J.D.

1996-10-01

The selectivity for etching the binary (GaN, AlN, and InN) and ternary nitrides (InGaN and InAlN) relative to each other in Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}/Ar, ICl/Ar, or IBr/Ar electron cyclotron resonance (ECR) plasmas, and Cl{sub 2}/Ar or CH{sub 4}/H{sub 2}/Ar reactive ion (RIE) plasmas was investigated. Cl-based etches appear to be the best choice for maximizing the selectivity of GaN over the other nitrides. GaN/AlN and GaN/InGaN etch rate ratios of {approximately} 10 were achieved at low RF power in Cl{sub 2}/Ar under ECR and RIE conditions, respectively. GaN/InN selectivity of 10 was found in ICl under ECR conditions.more » A relatively high selectivity (> 6) of InN/GaN was achieved in CH{sub 4}/H{sub 2}/Ar under ECR conditions at low RF powers (50 W). Since the high bond strengths of the nitrides require either high ion energies or densities to achieve practical etch rates it is difficult to achieve high selectivities.« less

Focused Ion Beam Fabrication of Graded Channel Field Effect Transistors (FETs) in GaAs and Si

DTIC Science & Technology

1988-11-21

is used even though the cut may need to be - I-am wide. Since theL ± ne REMOVAL etch time varies as the inverse square of the beam diameter , a ROF...at room temperature a fairly large diameter capillary 1.4-mm and ion induced deposition or etching , the focused ion beam inner diameter was used . For...Pd/B/As/P (alloy sources) Main - micromachining - implantation uses - ion induced deposition - lithography and etching - high resolution SIMS

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

NASA Technical Reports Server (NTRS)

Groves, W. O. (Inventor)

1969-01-01

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

A high-performance nanoporous Si/Al2O3 foam lithium-ion battery anode fabricated by selective chemical etching of the Al-Si alloy and subsequent thermal oxidation.

PubMed

Hwang, Gaeun; Park, Hyungmin; Bok, Taesoo; Choi, Sinho; Lee, Sungjun; Hwang, Inchan; Choi, Nam-Soon; Seo, Kwanyong; Park, Soojin

2015-03-14

Nanostructured micrometer-sized Al-Si particles are synthesized via a facile selective etching process of Al-Si alloy powder. Subsequent thin Al2O3 layers are introduced on the Si foam surface via a selective thermal wet oxidation process of etched Al-Si particles. The resulting Si/Al2O3 foam anodes exhibit outstanding cycling stability (a capacity retention of 78% after 300 cycles at the C/5 rate) and excellent rate capability.

Self-assembled titanium calcium oxide nanopatterns as versatile reactive nanomasks for dry etching lithographic transfer with high selectivity.

PubMed

Faustini, Marco; Drisko, Glenna L; Letailleur, Alban A; Montiel, Rafael Salas; Boissière, Cédric; Cattoni, Andrea; Haghiri-Gosnet, Anne Marie; Lerondel, Gilles; Grosso, David

2013-02-07

We report the simple preparation of ultra-thin self-assembled nanoperforated titanium calcium oxide films and their use as reactive nanomasks for selective dry etching of silicon. This novel reactive nanomask is composed of TiO(2) in which up to 50% of Ti was replaced by Ca (Ca(x)Ti(1-x)O(2-x)). The system was prepared by evaporation induced self-assembly of dip-coated solution of CaCl(2), TiCl(4) and poly(butadiene-block-ethylene oxide) followed by 5 min of thermal treatment at 500 °C in air. The mask exhibits enhanced selectivity by forming a CaF(2) protective layer in the presence of a chemically reactive fluorinated plasma. In particular it is demonstrated that ordered nano-arrays of dense Si pillars, or deep cylindrical wells, with high aspect ratio i.e. lateral dimensions as small as 20 nm and height up to 200 nm, can be formed. Both wells and pillars were formed by tuning the morphology and the homogeneity of the deposited mask. The mask preparation is extremely fast and simple, low-cost and easily scalable. Its combination with reactive ion etching constitutes one of the first examples of what can be achieved when sol-gel chemistry is coupled with top-down technologies. The resulting Si nanopatterns and nanostructures are of high interest for applications in many fields of nanotechnology including electronics and optics. This work extends and diversifies the toolbox of nanofabrication methods.

Anisotropic etching of silicon in solutions containing tensioactive compounds

NASA Astrophysics Data System (ADS)

Zubel, Irena

2016-12-01

The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

Effects of wet etch processing on laser-induced damage of fused silica surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battersby, C.L.; Kozlowski, M.R.; Sheehan, L.M.

1998-12-22

Laser-induced damage of transparent fused silica optical components by 355 nm illumination occurs primarily at surface defects produced during the grinding and polishing processes. These defects can either be surface defects or sub-surface damage.Wet etch processing in a buffered hydrogen fluoride (HF) solution has been examined as a tool for characterizing such defects. A study was conducted to understand the effects of etch depth on the damage threshold of fused silica substrates. The study used a 355 nm, 7.5 ns, 10 Hz Nd:YAG laser to damage test fused silica optics through various wet etch processing steps. Inspection of the surfacemore » quality was performed with Nomarski microscopy and Total Internal Reflection Microscopy. The damage test data and inspection results were correlated with polishing process specifics. The results show that a wet etch exposes subsurface damage while maintaining or improving the laser damage performance. The benefits of a wet etch must be evaluated for each polishing process.« less

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Advanced Simulation Technology to Design Etching Process on CMOS Devices

NASA Astrophysics Data System (ADS)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Inferring Fault Frictional and Reservoir Hydraulic Properties From Injection-Induced Seismicity

NASA Astrophysics Data System (ADS)

Jagalur-Mohan, Jayanth; Jha, Birendra; Wang, Zheng; Juanes, Ruben; Marzouk, Youssef

2018-02-01

Characterizing the rheological properties of faults and the evolution of fault friction during seismic slip are fundamental problems in geology and seismology. Recent increases in the frequency of induced earthquakes have intensified the need for robust methods to estimate fault properties. Here we present a novel approach for estimation of aquifer and fault properties, which combines coupled multiphysics simulation of injection-induced seismicity with adaptive surrogate-based Bayesian inversion. In a synthetic 2-D model, we use aquifer pressure, ground displacements, and fault slip measurements during fluid injection to estimate the dynamic fault friction, the critical slip distance, and the aquifer permeability. Our forward model allows us to observe nonmonotonic evolutions of shear traction and slip on the fault resulting from the interplay of several physical mechanisms, including injection-induced aquifer expansion, stress transfer along the fault, and slip-induced stress relaxation. This interplay provides the basis for a successful joint inversion of induced seismicity, yielding well-informed Bayesian posterior distributions of dynamic friction and critical slip. We uncover an inverse relationship between dynamic friction and critical slip distance, which is in agreement with the small dynamic friction and large critical slip reported during seismicity on mature faults.

Information on stress conditions in the oceanic crust from oval fractures in a deep borehole

USGS Publications Warehouse

Morin, R.H.

1990-01-01

Oval images etched into the wall of a deep borehole were detected in DSDP Hole 504B, eastern equatorial Pacific Ocean, from analysis of an acoustic televiewer log. A systematic inspection of these ovals has identified intriguing consistencies in appearance that cannot be explained satisfactorily by a random, coincidental distribution of pillow lavas. As an alternative hypothesis, Mohr-Coulomb failure criterion is used to account for the generation and orientation of similarly curved, stress-induced fractures. Consequently, these oval features can be interpreted as fractures and related directly to stress conditions in the oceanic crust at this site. The azimuth of the oval center corresponds to the orientation of maximum horizontal principal stress (SH), and the oval width, which spans approximately 180?? of the borehole, is aligned with the azimuth of minimum horizontal principal stress (Sh). The oval height is controlled by the fracture angle and thus is a function of the coefficient of internal friction of the rock. -from Author

Semiconductor etching by hyperthermal neutral beams

NASA Technical Reports Server (NTRS)

Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

1999-01-01

An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1988-06-16

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

1989-01-01

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

Optimization of reactive-ion etching (RIE) parameters for fabrication of tantalum pentoxide (Ta2O5) waveguide using Taguchi method

NASA Astrophysics Data System (ADS)

Muttalib, M. Firdaus A.; Chen, Ruiqi Y.; Pearce, S. J.; Charlton, Martin D. B.

2017-11-01

In this paper, we demonstrate the optimization of reactive-ion etching (RIE) parameters for the fabrication of tantalum pentoxide (Ta2O5) waveguide with chromium (Cr) hard mask in a commercial OIPT Plasmalab 80 RIE etcher. A design of experiment (DOE) using Taguchi method was implemented to find optimum RF power, mixture of CHF3 and Ar gas ratio, and chamber pressure for a high etch rate, good selectivity, and smooth waveguide sidewall. It was found that the optimized etch condition obtained in this work were RF power = 200 W, gas ratio = 80 %, and chamber pressure = 30 mTorr with an etch rate of 21.6 nm/min, Ta2O5/Cr selectivity ratio of 28, and smooth waveguide sidewall.

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.

1999-01-01

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrova, Olga; Balakrishnan, Ganesh

2017-02-24

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, Carol I. H.; Dishman, James L.

1987-01-01

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, C.R.H.; Dishman, J.L.

1985-10-11

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Characterization and quenching of friction-induced limit cycles of electro-hydraulic servovalve control systems with transport delay.

PubMed

Wang, Yuan-Jay

2010-10-01

This paper develops a systematic and straightforward methodology to characterize and quench the friction-induced limit cycle conditions in electro-hydraulic servovalve control systems with transport delay in the transmission line. The nonlinear friction characteristic is linearized by using its corresponding describing function. The delay time in the transmission line, which could accelerate the generation of limit cycles is particularly considered. The stability equation method together with parameter plane method provides a useful tool for the establishment of necessary conditions to sustain a limit cycle directly in the constructed controller coefficient plane. Also, the stable region, the unstable region, and the limit cycle region are identified in the parameter plane. The parameter plane characterizes a clear relationship between limit cycle amplitude, frequency, transport delay, and the controller coefficients to be designed. The stability of the predicted limit cycle is checked by plotting stability curves. The stability of the system is examined when the viscous gain changes with respect to the temperature of the working fluid. A feasible stable region is characterized in the parameter plane to allow a flexible choice of controller gains. The robust prevention of limit cycle is achieved by selecting controller gains from the asymptotic stability region. The predicted results are verified by simulations. It is seen that the friction-induced limit cycles can be effectively predicted, removed, and quenched via the design of the compensator even in the case of viscous gain and delay time variations unconditionally. Copyright © 2010 ISA. Published by Elsevier Ltd. All rights reserved.

Amorphization of quartz by friction: Implication to silica-gel lubrication of fault surfaces

NASA Astrophysics Data System (ADS)

Nakamura, Yu; Muto, Jun; Nagahama, Hiroyuki; Shimizu, Ichiko; Miura, Takashi; Arakawa, Ichiro

2012-11-01

To understand physico-chemical processes at real contacts (asperities) on fault surfaces, we conducted pin-on-disk friction experiments at room temperature, using single crystalline quartz disks and quartz pins. Velocity weakening from friction coefficient μ ˜ 0.6 to 0.4 was observed under apparent normal stresses of 8-19 (18 > 19), when the slip rate was increased from 0.003 to 2.6 m/s. Frictional surfaces revealed ductile deformation of wear materials. The Raman spectra of frictional tracks showed blue shifts and broadening of quartz main bands, and appearance of new peaks at 490-520 and 610 cm-1. All these features are indicative of pressure- and strain-induced amorphization of quartz. The mapping analyses of Fourier transform infrared (FT-IR) spectroscopy at room dry conditions suggest selective hydration of wear materials. It is possible that the strained Si-O-Si bridges in amorphous silica preferentially react with water to form silica-gel. In natural fault systems, amorphous materials would be produced at real fault contacts and accumulate over the fault surfaces with displacements. Subsequent hydration would lead to significant reduction of fault strength during slip.

Effect of a New Surface Treatment Solution on the Bond Strength of Composite to Enamel

DTIC Science & Technology

2016-06-01

enamel ( Erickson et al., 2005). More significantly, clinical studies have shown significantly less marginal defects and staining with selective...using phosphoric acid. Erickson et al., (2009) also found improved bond strengths with a selective-etch step and attributed this to the degree of...cut enamel and dentin. Oper Dent 2005;30(1):39-49. Erickson RL, Barkmeier WW, Kimmes NS. Bond strength of self-etch adhesives to pre-etched

Frictional stability-permeability relationships for fractures in shales

NASA Astrophysics Data System (ADS)

Fang, Yi; Elsworth, Derek; Wang, Chaoyi; Ishibashi, Takuya; Fitts, Jeffrey P.

2017-03-01

There is wide concern that fluid injection in the subsurface, such as for the stimulation of shale reservoirs or for geological CO2 sequestration (GCS), has the potential to induce seismicity that may change reservoir permeability due to fault slip. However, the impact of induced seismicity on fracture permeability evolution remains unclear due to the spectrum of modes of fault reactivation (e.g., stable versus unstable). As seismicity is controlled by the frictional response of fractures, we explore friction-stability-permeability relationships through the concurrent measurement of frictional and hydraulic properties of artificial fractures in Green River shale (GRS) and Opalinus shale (OPS). We observe that carbonate-rich GRS shows higher frictional strength but weak neutral frictional stability. The GRS fracture permeability declines during shearing while an increased sliding velocity reduces the rate of permeability decline. By comparison, the phyllosilicate-rich OPS has lower friction and strong stability while the fracture permeability is reduced due to the swelling behavior that dominates over the shearing induced permeability reduction. Hence, we conclude that the friction-stability-permeability relationship of a fracture is largely controlled by mineral composition and that shale mineral compositions with strong frictional stability may be particularly subject to permanent permeability reduction during fluid infiltration.

Investigation of Nitride Morphology After Self-Aligned Contact Etch

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

2001-01-01

Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

Characteristics of n-GaN after ICP etching

NASA Astrophysics Data System (ADS)

Han, Yanjun; Xue, Song; Guo, Wenping; Hao, Zhi-Biao; Sun, Changzheng; Luo, Yi

2002-09-01

In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.

Incident angle dependence of proton response of CR-39 (TS-16) track detector

NASA Technical Reports Server (NTRS)

Oda, K.; Csige, I.; Yamauchi, T.; Miyake, H.; Benton, E. V.

1993-01-01

The proton response of the TS-16 type of CR-39 plastic nuclear track detector has been studied with accelerated and fast neutron induced protons in vacuum and in air. The diameters of etched tracks were measured as a function of etching time and the etch rate ratio and the etch induction layer were determined from the growth curve of the diameter using a variable etch rate ratio model. In the case of the accelerated protons in vacuum an anomalous incident angle dependence of the response is observed.

A study of GaN-based LED structure etching using inductively coupled plasma

NASA Astrophysics Data System (ADS)

Wang, Pei; Cao, Bin; Gan, Zhiyin; Liu, Sheng

2011-02-01

GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaN-based LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BCl3 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).

Frictional stability-permeability relationships for fractures in shales: Friction-Permeability Relationships

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Yi; Elsworth, Derek; Wang, Chaoyi

There is wide concern that fluid injection in the subsurface, such as for the stimulation of shale reservoirs or for geological CO 2 sequestration (GCS), has the potential to induce seismicity that may change reservoir permeability due to fault slip. However, the impact of induced seismicity on fracture permeability evolution remains unclear due to the spectrum of modes of fault reactivation (e.g., stable versus unstable). As seismicity is controlled by the frictional response of fractures, we explore friction-stability-permeability relationships through the concurrent measurement of frictional and hydraulic properties of artificial fractures in Green River shale (GRS) and Opalinus shale (OPS).more » We observe that carbonate-rich GRS shows higher frictional strength but weak neutral frictional stability. The GRS fracture permeability declines during shearing while an increased sliding velocity reduces the rate of permeability decline. By comparison, the phyllosilicate-rich OPS has lower friction and strong stability while the fracture permeability is reduced due to the swelling behavior that dominates over the shearing induced permeability reduction. Hence, we conclude that the friction-stability-permeability relationship of a fracture is largely controlled by mineral composition and that shale mineral compositions with strong frictional stability may be particularly subject to permanent permeability reduction during fluid infiltration.« less

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

Magnon-induced non-Markovian friction of a domain wall in a ferromagnet

NASA Astrophysics Data System (ADS)

Kim, Se Kwon; Tchernyshyov, Oleg; Galitski, Victor; Tserkovnyak, Yaroslav

2018-05-01

Motivated by the recent study on the quasiparticle-induced friction of solitons in superfluids, we theoretically study magnon-induced intrinsic friction of a domain wall in a one-dimensional ferromagnet. To this end, we start by obtaining the hitherto overlooked dissipative interaction of a domain wall and its quantum magnon bath to linear order in the domain-wall velocity and to quadratic order in magnon fields. An exact expression for the pertinent scattering matrix is obtained with the aid of supersymmetric quantum mechanics. We then derive the magnon-induced frictional force on a domain wall in two different frameworks: time-dependent perturbation theory in quantum mechanics and the Keldysh formalism, which yield identical results. The latter, in particular, allows us to verify the fluctuation-dissipation theorem explicitly by providing both the frictional force and the correlator of the associated stochastic Langevin force. The potential for magnons induced by a domain wall is reflectionless, and thus the resultant frictional force is non-Markovian similar to the case of solitons in superfluids. They share an intriguing connection to the Abraham-Lorentz force that is well known for its causality paradox. The dynamical responses of a domain wall are studied under a few simple circumstances, where the non-Markovian nature of the frictional force can be probed experimentally. Our work, in conjunction with the previous study on solitons in superfluids, shows that the macroscopic frictional force on solitons can serve as an effective probe of the microscopic degrees of freedom of the system.

Performance of Universal Adhesive in Primary Molars After Selective Removal of Carious Tissue: An 18-Month Randomized Clinical Trial.

PubMed

Lenzi, Tathiane Larissa; Pires, Carine Weber; Soares, Fabio Zovico Maxnuck; Raggio, Daniela Prócida; Ardenghi, Thiago Machado; de Oliveira Rocha, Rachel

2017-09-15

To evaluate the 18-month clinical performance of a universal adhesive, applied under different adhesion strategies, after selective carious tissue removal in primary molars. Forty-four subjects (five to 10 years old) contributed with 90 primary molars presenting moderately deep dentin carious lesions on occlusal or occluso-proximal surfaces, which were randomly assigned following either self-etch or etch-and-rinse protocol of Scotchbond Universal Adhesive (3M ESPE). Resin composite was incrementally inserted for all restorations. Restorations were evaluated at one, six, 12, and 18 months using the modified United States Public Health Service criteria. Survival estimates for restorations' longevity were evaluated using the Kaplan-Meier method. Multivariate Cox regression analysis with shared frailty to assess the factors associated with failures (P<0.05). Estimated survival rates of the restorations were 100 percent, 100 percent, 90.6 percent, and 81.4 percent at one, six, 12, and 18 months, respectively. The adhesion strategy did not influence the restorations' longevity (P=0.06; 72.2 percent and 89.7 percent with etch-and-rinse and self-etch mode, respectively). Self-etch and etch-and-rinse strategies did not influence the clinical behavior of universal adhesive used in primary molars after selective carious tissue removal; although there was a tendency for better outcome of the self-etch strategy.

Radiation and process-induced damage in Ga2O3

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Yang, Jiancheng; Ren, F.; Yang, G.; Kim, Jihyun; Stavola, M.; Kuramata, A.

2018-02-01

Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap ( 4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Selective Plasma Etching of Polymeric Substrates for Advanced Applications

PubMed Central

Puliyalil, Harinarayanan; Cvelbar, Uroš

2016-01-01

In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. PMID:28335238

Ion-beam-assisted etching of diamond

NASA Technical Reports Server (NTRS)

Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

1985-01-01

The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

Preparation of superhydrophobic titanium surfaces via electrochemical etching and fluorosilane modification

NASA Astrophysics Data System (ADS)

Lu, Yao; Xu, Wenji; Song, Jinlong; Liu, Xin; Xing, Yingjie; Sun, Jing

2012-12-01

The preparation of superhydrophobic surfaces on hydrophilic metal substrates depends on both surface microstructures and low surface energy modification. In this study, a simple and inexpensive electrochemical method for preparing robust superhydrophobic titanium surfaces is reported. The neutral sodium chloride solution is used as electrolyte. Fluoroalkylsilane (FAS) was used to reduce the surface energy of the electrochemically etched surface. Scanning electron microscopy (SEM) images, energy-dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) spectra, and contact angle measurement are performed to characterize the morphological features, chemical composition, and wettability of the titanium surfaces. Stability and friction tests indicate that the prepared titanium surfaces are robust. The analysis of electrolyte, reaction process, and products demonstrates that the electrochemical processing is very inexpensive and environment-friendly. This method is believed to be easily adaptable for use in large-scale industry productions to promote the application of superhydrophobic titanium surfaces in aviation, aerospace, shipbuilding, and the military industry.

Method of fabricating vertically aligned group III-V nanowires

DOEpatents

Wang, George T; Li, Qiming

2014-11-25

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

NASA Astrophysics Data System (ADS)

Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

2018-01-01

Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

Attraction induced frictionless sliding of rare gas monolayer on metallic surfaces: an efficient strategy for superlubricity.

PubMed

Sun, Junhui; Zhang, Yanning; Lu, Zhibin; Xue, Qunji; Wang, Liping

2017-05-10

Friction on a nanoscale revealed rich load-dependent behavior, which departs strongly from the long-standing Amonton's law. Whilst electrostatic repulsion-induced friction collapse for rare gas sliding over metallic surfaces in a high-load regime was reported by Righi et al. (Phys. Rev. Lett., 2007, 99, 176101), the significant role of attraction on frictional properties has not been reported to date. In this study, the frictional motion of Xe/Cu(111), Xe/Pd(111) and Ar/Cu(111) was studied using van der Waals corrected density functional calculations. An attraction-induced zero friction, which is a signal of superlubricity, was found for the sliding systems. The superlubric state results from the disappearance of the potential corrugation along the favored sliding path as a consequence of the potential crossing in the attractive regime when the interfacial pressure approaches a critical-value. The finding of an attraction-driven friction drop, together with the repulsion-induced collapse in the high-load regime, which breaks down the classic Amonton's law, provides a distinct approach for the realization of inherent superlubricity in some adsorbate/substrate interfaces.

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2

NASA Astrophysics Data System (ADS)

Hansen, S. G.; Luckman, G.; Nieman, George C.; Colson, Steven D.

1990-09-01

Laser-induced fluorescence of CF2 is used to monitor heterogeneous processes in ≊300 mTorr CF4/O2 plasmas. CF2 is rapidly removed at fluorinated copper and silver surfaces in 13.56-MHz rf discharges as judged by a distinct dip in its spatial distribution. These metals, when employed as etch masks, are known to accelerate plasma etching of silicon, and the present results suggest catalytic dehalogenation of CF2 is involved in this process. In contrast, aluminum and silicon dioxide exhibit negligible reactivity with CF2, which suggests that aluminum masks will not appreciably accelerate silicon etching and that ground state CF2 does not efficiently etch silicon dioxide. Measurement of CF2 decay in a pulsed discharge coupled with direct laser sputtering of metal into the gas phase indicates the interaction between CF2 and the active metals is purely heterogeneous. Aluminum does, however, exhibit homogeneous reactivity with CF2. Redistribution of active metal by plasma sputtering readily occurs; silicon etch rates may also be enhanced by the metal's presence on the silicon surface. Polymers contribute CF2 to the plasma as they etch. The observation of an induction period suggests fluorination of the polymer surface is the first step in its degradation. Polymeric etch masks can therefore depress the silicon etch rate by removal of F atoms, the primary etchants.

Friction Regimes of Water-Lubricated Diamond (111): Role of Interfacial Ether Groups and Tribo-Induced Aromatic Surface Reconstructions

NASA Astrophysics Data System (ADS)

Kuwahara, Takuya; Moras, Gianpietro; Moseler, Michael

2017-09-01

Large-scale quantum molecular dynamics of water-lubricated diamond (111) surfaces in sliding contact reveals multiple friction regimes. While water starvation causes amorphization of the tribological interface, small H2O traces are sufficient to preserve crystallinity. This can result in high friction due to cold welding via ether groups or in ultralow friction due to aromatic surface passivation triggered by tribo-induced Pandey reconstruction. At higher water coverage, Grotthuss-type diffusion and H2O dissociation yield dense H /OH surface passivation leading to another ultralow friction regime.

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Stick-slip friction and wear of articular joints

PubMed Central

Lee, Dong Woog; Banquy, Xavier; Israelachvili, Jacob N.

2013-01-01

Stick-slip friction was observed in articular cartilage under certain loading and sliding conditions and systematically studied. Using the Surface Forces Apparatus, we show that stick-slip friction can induce permanent morphological changes (a change in the roughness indicative of wear/damage) in cartilage surfaces, even under mild loading and sliding conditions. The different load and speed regimes can be represented by friction maps—separating regimes of smooth and stick-slip sliding; damage generally occurs within the stick-slip regimes. Prolonged exposure of cartilage surfaces to stick-slip sliding resulted in a significant increase of surface roughness, indicative of severe morphological changes of the cartilage superficial zone. To further investigate the factors that are conducive to stick-slip and wear, we selectively digested essential components of cartilage: type II collagen, hyaluronic acid (HA), and glycosaminoglycans (GAGs). Compared with the normal cartilage, HA and GAG digestions modified the stick-slip behavior and increased surface roughness (wear) during sliding, whereas collagen digestion decreased the surface roughness. Importantly, friction forces increased up to 2, 10, and 5 times after HA, GAGs, and collagen digestion, respectively. Also, each digestion altered the friction map in different ways. Our results show that (i) wear is not directly related to the friction coefficient but (ii) more directly related to stick-slip sliding, even when present at small amplitudes, and that (iii) the different molecular components of joints work synergistically to prevent wear. Our results also suggest potential noninvasive diagnostic tools for sensing stick-slip in joints. PMID:23359687

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Ishikawa, Kenji; Imamura, Masato; Tsutsumi, Takayoshi; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2018-06-01

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

Innovations in bonding to zirconia-based materials: Part I.

PubMed

Aboushelib, Moustafa N; Matinlinna, Jukka P; Salameh, Ziad; Ounsi, Hani

2008-09-01

Establishing a reliable bond to zirconia-based materials has proven to be difficult which is the major limitation against fabricating adhesive zirconia restorations. This bond could be improved using novel selective infiltration etching conditioning in combination with engineered zirconia primers. Aim of the work was to evaluate resin-to-zirconia bond strength using selective infiltration etching and novel silane-based zirconia primers. Zirconia discs (Procera Zirconia) received selective infiltration etching surface treatment followed by coating with either of five especially engineered experimental zirconia primers. Pre-aged resin-composite discs (Tetric Ivo Ceram) were bonded to the treated surface using an MDP-containing resin-composite (Panavia F 2.0). The bilayered specimens were cut into microbars and the microtensile bond strength (MTBS) was evaluated. 'As-sintered' zirconia discs served as a control (alpha=0.05). The broken microbars were examined using a scanning electron microscope (SEM). The combination of selective infiltration etching with experimental zirconia primers significantly improved (F=3805, P<0.0001) the MTBS values (41+/-5.8 MPa) compared to the 'as-sintered' surface using the same primers which demonstrated spontaneous failure and very low bond strength values (2.6+/-3.1 MPa). SEM analysis revealed that selective infiltration etching surface treatment resulted in a nano-retentive surface where the zirconia primers were able to penetrate and interlock which explained the higher MTBS values observed for the treated specimens.

Fabrication of silver tips for scanning tunneling microscope induced luminescence.

PubMed

Zhang, C; Gao, B; Chen, L G; Meng, Q S; Yang, H; Zhang, R; Tao, X; Gao, H Y; Liao, Y; Dong, Z C

2011-08-01

We describe a reliable fabrication procedure of silver tips for scanning tunneling microscope (STM) induced luminescence experiments. The tip was first etched electrochemically to yield a sharp cone shape using selected electrolyte solutions and then sputter cleaned in ultrahigh vacuum to remove surface oxidation. The tip status, in particular the tip induced plasmon mode and its emission intensity, can be further tuned through field emission and voltage pulse. The quality of silver tips thus fabricated not only offers atomically resolved STM imaging, but more importantly, also allows us to perform challenging "color" photon mapping with emission spectra taken at each pixel simultaneously during the STM scan under relatively small tunnel currents and relatively short exposure time.

Fabrication of 3D surface structures using grayscale lithography

NASA Astrophysics Data System (ADS)

Stilson, Christopher; Pal, Rajan; Coutu, Ronald A.

2014-03-01

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.

Anisotropic Etching Using Reactive Cluster Beams

NASA Astrophysics Data System (ADS)

Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

2010-12-01

The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation

NASA Astrophysics Data System (ADS)

Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

2015-07-01

Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. Electronic supplementary information (ESI) available: Diameter distributions of as-prepared and etched samples, optical images, specific catalytic data of CO oxidation and comparison of CO oxidation. See DOI: 10.1039/c5nr01846c

Multiple spatially localized dynamical states in friction-excited oscillator chains

NASA Astrophysics Data System (ADS)

Papangelo, A.; Hoffmann, N.; Grolet, A.; Stender, M.; Ciavarella, M.

2018-03-01

Friction-induced vibrations are known to affect many engineering applications. Here, we study a chain of friction-excited oscillators with nearest neighbor elastic coupling. The excitation is provided by a moving belt which moves at a certain velocity vd while friction is modelled with an exponentially decaying friction law. It is shown that in a certain range of driving velocities, multiple stable spatially localized solutions exist whose dynamical behavior (i.e. regular or irregular) depends on the number of oscillators involved in the vibration. The classical non-repeatability of friction-induced vibration problems can be interpreted in light of those multiple stable dynamical states. These states are found within a "snaking-like" bifurcation pattern. Contrary to the classical Anderson localization phenomenon, here the underlying linear system is perfectly homogeneous and localization is solely triggered by the friction nonlinearity.

Role of Friction in Materials Selection for Automotive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blau, Peter Julian

This is an invited article for a special issue of the ASM International monthly magazine that concerns "Automotive Materials and Applications." The article itself overviews frictional considerations in material selection for automobiles. It discusses implications for energy efficiency (engine friction) and safety (brakes) among other topics.

Photolithography and Selective Etching of an Array of Quartz Tuning Fork Resonators with Improved Impact Resistance Characteristics

NASA Astrophysics Data System (ADS)

Lee, Sungkyu

2001-08-01

Quartz tuning fork blanks with improved impact-resistant characteristics for use in Qualcomm mobile station modem (MSM)-3000 central processing unit (CPU) chips for code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) systems were designed using finite element method (FEM) analysis and suitable processing conditions were determined for the reproducible precision etching of a Z-cut quartz wafer into an array of tuning forks. Negative photoresist photolithography for the additive process was used in preference to positive photoresist photolithography for the subtractive process to etch the array of quartz tuning forks. The tuning fork pattern was transferred via a conventional photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. A tightly adhering and pinhole-free 600/2000 Å chromium/gold mask was coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the back surface of the wafer. With the protective metallization area of the tuning fork geometry thus formed, etching through the quartz wafer was performed at 80°C in a ± 1.5°C controlled bath containing a concentrated solution of ammonium bifluoride to remove the unwanted areas of the quartz wafer. The quality of the quartz wafer surface finish after quartz etching depended primarily on the surface finish of the quartz wafer prior to etching and the quality of quartz crystals used. Selective etching of a 100 μm quartz wafer could be achieved within 90 min at 80°C. A selective etching procedure with reproducible precision has thus been established and enables the photolithographic mass production of miniature tuning fork resonators.

Bond strength of universal adhesives: A systematic review and meta-analysis.

PubMed

Rosa, Wellington Luiz de Oliveira da; Piva, Evandro; Silva, Adriana Fernandes da

2015-07-01

A systematic review was conducted to determine whether the etch-and-rinse or self-etching mode is the best protocol for dentin and enamel adhesion by universal adhesives. This report followed the PRISMA Statement. A total of 10 articles were included in the meta-analysis. Two reviewers performed a literature search up to October 2014 in eight databases: PubMed, Web of Science, Scopus, BBO, SciELO, LILACS, IBECS and The Cochrane Library. In vitro studies evaluating the bond strength of universal adhesives to dentin and/or enamel by the etch-and-rinse and self-etch strategies were eligible to be selected. Statistical analyses were conducted using RevMan 5.1 (The Cochrane Collaboration, Copenhagen, Denmark). A global comparison was performed with random-effects models at a significance level of p<0.05. The analysis of dentin micro-tensile bond strength showed no statistically significant difference between the etch-and-rinse and self-etch strategies for mild universal adhesives (p≥0.05). However, for the ultra-mild All-Bond Universal adhesive, the etch-and-rinse strategy was significantly different than the self-etch mode in terms of dentin micro-tensile bond strength, as well as in the global analysis of enamel micro-tensile and micro-shear bond strength (p≤0.05). The enamel bond strength of universal adhesives is improved with prior phosphoric acid etching. However, this effect was not evident for dentin with the use of mild universal adhesives with the etch-and-rinse strategy. Selective enamel etching prior to the application of a mild universal adhesive is an advisable strategy for optimizing bonding. Copyright © 2015 Elsevier Ltd. All rights reserved.

Graphene nanoribbons: Relevance of etching process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.

2015-05-14

Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused bymore » more or larger localized states at the edges of the ashed device compared to the RIE defined device.« less

Preparation of fluorescent mesoporous hollow silica-fullerene nanoparticles via selective etching for combined chemotherapy and photodynamic therapy

NASA Astrophysics Data System (ADS)

Yang, Yannan; Yu, Meihua; Song, Hao; Wang, Yue; Yu, Chengzhong

2015-07-01

Well-dispersed mesoporous hollow silica-fullerene nanoparticles with particle sizes of ~50 nm have been successfully prepared by incorporating fullerene molecules into the silica framework followed by a selective etching method. The fabricated fluorescent silica-fullerene composite with high porosity demonstrates excellent performance in combined chemo/photodynamic therapy.Well-dispersed mesoporous hollow silica-fullerene nanoparticles with particle sizes of ~50 nm have been successfully prepared by incorporating fullerene molecules into the silica framework followed by a selective etching method. The fabricated fluorescent silica-fullerene composite with high porosity demonstrates excellent performance in combined chemo/photodynamic therapy. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02769a

Laser-driven fusion etching process

DOEpatents

Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

1987-08-25

The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

Friction spinning - Twist phenomena and the capability of influencing them

NASA Astrophysics Data System (ADS)

Lossen, Benjamin; Homberg, Werner

2016-10-01

The friction spinning process can be allocated to the incremental forming techniques. The process consists of process elements from both metal spinning and friction welding. The selective combination of process elements from these two processes results in the integration of friction sub-processes in a spinning process. This implies self-induced heat generation with the possibility of manufacturing functionally graded parts from tube and sheets. Compared with conventional spinning processes, this in-process heat treatment permits the extension of existing forming limits and also the production of more complex geometries. Furthermore, the defined adjustment of part properties like strength, grain size/orientation and surface conditions can be achieved through the appropriate process parameter settings and consequently by setting a specific temperature profile in combination with the degree of deformation. The results presented from tube forming start with an investigation into the resulting twist phenomena in flange processing. In this way, the influence of the main parameters, such as rotation speed, feed rate, forming paths and tool friction surface, and their effects on temperature, forces and finally the twist behavior are analyzed. Following this, the significant correlations with the parameters and a new process strategy are set out in order to visualize the possibility of achieving a defined grain texture orientation.

Ion-beam nanopatterning: experimental results with chemically-assisted beam

NASA Astrophysics Data System (ADS)

Pochon, Sebastien C. R.

2018-03-01

The need for forming gratings (for example used in VR headsets) in materials such as SiO2 has seen a recent surge in the use of Ion beam etching techniques. However, when using an argon-only beam, the selectivity is limited as it is a physical process. Typically, gases such as CHF3, SF6, O2 and Cl2 can be added to argon in order to increase selectivity; depending on where the gas is injected, the process is known as Reactive Ion Beam Etching (RIBE) or Chemically Assisted Ion Beam Etching (CAIBE). The substrate holder can rotate in order to provide an axisymmetric etch rate profile. It can also be tilted over a range of angles to the beam direction. This enables control over the sidewall profile as well as radial uniformity optimisation. Ion beam directionality in conjunction with variable incident beam angle via platen angle setting enables profile control and feature shaping during nanopatterning. These hardware features unique to the Ion Beam etching methods can be used to create angled etch features. The CAIBE technique is also well suited to laser diode facet etch (for optoelectronic devices); these typically use III-V materials like InP. Here, we report on materials such as SiO2 etched without rotation and at a fixed platen angle allowing the formation of gratings and InP etched at a fixed angle with rotation allowing the formation of nanopillars and laser facets.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ionmore » scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.« less

Hydroxyapatite induces spontaneous polymerization of model self-etch dental adhesives.

PubMed

Zhang, Ying; Wu, Ningjing; Bai, Xinyan; Xu, Changqi; Liu, Yi; Wang, Yong

2013-10-01

The objective of this study is to report for the first time the spontaneous polymerization phenomenon of self-etch dental adhesives induced by hydroxylapatite (HAp). Model self-etch adhesives were prepared by using a monomer mixture of bis[2-(methacryloyloxy)ethyl] phosphate (2MP) with 2-hydroxyethyl methacrylate (HEMA). The initiator system consisted of camphorquinone (CQ, 0.022 mmol/g) and ethyl 4-dimethylaminobenzoate (4E, 0.022-0.088 mmol/g). HAp (2-8 wt.%) was added to the neat model adhesive. In a dark environment, the polymerization was monitored in-situ using ATR/FT-IR, and the mechanical properties of the polymerized adhesives were evaluated using nanoindentation technique. Results indicated that spontaneous polymerization was not observed in the absence of HAp. However, as different amounts of HAp were incorporated into the adhesives, spontaneous polymerization was induced. Higher HAp content led to higher degree of conversion (DC), higher rate of polymerization (RP) and shorter induction period (IP). In addition, higher 4E content also elevated DC and RP and reduced IP of the adhesives. Nanoindentation result suggested that the Young's modulus of the polymerized adhesives showed similar dependence on HAp and 4E contents. In summary, interaction with HAp could induce spontaneous polymerization of the model self-etch adhesives. This result provides important information for understanding the initiation mechanism of the self-etch adhesives, and may be of clinical significance to strengthen the adhesive/dentin interface based on the finding. Copyright © 2013 Elsevier B.V. All rights reserved.

Hydroxyapatite induces spontaneous polymerization of model self-etch dental adhesives

PubMed Central

Zhang, Ying; Wu, Ningjing; Bai, Xinyan; Xu, Changqi; Liu, Yi; Wang, Yong

2013-01-01

The objective of this study is to report for the first time the spontaneous polymerization phenomenon of self-etch dental adhesives induced by hydroxylapatite (HAp). Model self-etch adhesives were prepared by using a monomer mixture of bis[2-(methacryloyloxy)ethyl] phosphate (2MP) with 2-hydroxyethyl methacrylate (HEMA). The initiator system consisted of camphorquinone (CQ, 0.022 mmol/g) and ethyl 4-dimethylaminobenzoate (4E, 0.022–0.088 mmol/g). HAp (2–8 wt.%) was added to the neat model adhesive. In a dark environment, the polymerization was monitored in-situ using ATR/FT-IR, and the mechanical properties of the polymerized adhesives were evaluated using nanoindentation technique. Results indicated that spontaneous polymerization was not observed in the absence of HAp. However, as different amounts of HAp were incorporated into the adhesives, spontaneous polymerization was induced. Higher HAp content led to higher degree of conversion (DC), higher rate of polymerization (RP) and shorter induction period (IP). In addition, higher 4E content also elevated DC and RP and reduced IP of the adhesives. Nanoindentation result suggested that the Young's modulus of the polymerized adhesives showed similar dependence on HAp and 4E contents. In summary, interaction with HAp could induce spontaneous polymerization of the model self-etch adhesives. This result provides important information for understanding the initiation mechanism of the self-etch adhesives, and may be of clinical significance to strengthen the adhesive/dentin interface based on the finding. PMID:23910263

Fundamentals of EUV resist-inorganic hardmask interactions

NASA Astrophysics Data System (ADS)

Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

2017-03-01

High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

PubMed

Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

2016-03-01

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

Laser-driven fusion etching process

DOEpatents

Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

1989-01-01

The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

Effects of a power and photon energy of incident light on near-field etching properties

NASA Astrophysics Data System (ADS)

Yatsui, T.; Saito, H.; Nishioka, K.; Leuschel, B.; Soppera, O.; Nobusada, K.

2017-12-01

We developed a near-field etching technique for realizing an ultra-flat surfaces of various materials and structures. To elucidate the near-field etching properties, we have investigated the effects of power and the photon energy of the incident light. First, we established theoretically that an optical near-field with photon energy lower than the absorption edge of the molecules can induce molecular vibrations. We used nanodiamonds to study the power dependence of the near-field etching properties. From the topological changes of the nanodiamonds, we confirmed the linear-dependence of the etching volume with the incident power. Furthermore, we studied the photon energy dependence using TiO2 nanostriped structures, which revealed that a lower photon energy results in a lower etching rate.

Long-term TEM analysis of the nanoleakage patterns in resin-dentin interfaces produced by different bonding strategies.

PubMed

Reis, Andre F; Giannini, Marcelo; Pereira, Patricia N R

2007-09-01

The aim of this study was to evaluate the ability of etch-and-rinse and self-etching adhesive systems to prevent time- and water-induced nanoleakage in resin-dentin interfaces over a 6-month storage period. Five commercial adhesives were tested, which comprise three different strategies of bonding resins to tooth hard tissues: one single-step self-etching adhesive (One-up Bond F (OB), Tokuyama); two two-step self-etching primers (Clearfil SE Bond (SE) and an antibacterial fluoride-containing system, Clearfil Protect Bond (CP), Kuraray Inc.); two two-step etch-and-rinse adhesives (Single Bond (SB), 3M ESPE and Prime&Bond NT (PB), Dentsply). Restored teeth were sectioned into 0.9 mm thick slabs and stored in water or mineral oil for 24 h, 3 or 6 months. A silver tracer solution was used to reveal nanometer-sized water-filled spaces and changes that occurred over time within resin-dentin interfaces. Characterization of interfaces was performed with the TEM. The two two-step self-etching primers showed little silver uptake during the 6-month experiment. Etch-and-rinse adhesives exhibited silver deposits predominantly within the hybrid layer (HL), which significantly increased for SB after water-storage. The one-step self-etching adhesive OB presented massive silver accumulation within the HL and water-trees protruding into the adhesive layer, which increased in size and quantity after water-storage. After storage in oil, reduced silver deposition was observed at the interfaces for all groups. Different levels of water-induced nanoleakage were observed for the different bonding strategies. The two-step self-etching primers, especially the antibacterial fluoride-containing system CP, showed the least nanoleakage after 6 months of storage in water.

Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching

PubMed Central

Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide; Gomez, Carmen; Leo, Giuseppe; Favero, Ivan

2017-01-01

Photonic lattices of mutually interacting indistinguishable cavities represent a cornerstone of collective phenomena in optics and could become important in advanced sensing or communication devices. The disorder induced by fabrication technologies has so far hindered the development of such resonant cavity architectures, while post-fabrication tuning methods have been limited by complexity and poor scalability. Here we present a new simple and scalable tuning method for ensembles of microphotonic and nanophotonic resonators, which enables their permanent collective spectral alignment. The method introduces an approach of cavity-enhanced photoelectrochemical etching in a fluid, a resonant process triggered by sub-bandgap light that allows for high selectivity and precision. The technique is presented on a gallium arsenide nanophotonic platform and illustrated by finely tuning one, two and up to five resonators. It opens the way to applications requiring large networks of identical resonators and their spectral referencing to external etalons. PMID:28117394

Smart Pixels for Optical Processing and Communications: Design, Models, Fabrication and Test

DTIC Science & Technology

1998-06-01

11.3 Mobility-Lifetime Product 115 11.4 P-IforVCSEL 116 Chapter 12: Developing a Reliable Etch 12.1 Etch Rates and Selectivity for Citric Acid 126...eGa0.4As etch-stop layer beneath the GaAs buffer. The gate recess was performed with a timed citric acid / hydrogen peroxide wet etch. The conducting...alkalinity. The wet etchant tested in this effort was a citric acid / hydrogen peroxide mixture,8൓ due to its availability, ease of preparation

Advanced Mitigation Process (AMP) for Improving Laser Damage Threshold of Fused Silica Optics

NASA Astrophysics Data System (ADS)

Ye, Xin; Huang, Jin; Liu, Hongjie; Geng, Feng; Sun, Laixi; Jiang, Xiaodong; Wu, Weidong; Qiao, Liang; Zu, Xiaotao; Zheng, Wanguo

2016-08-01

The laser damage precursors in subsurface of fused silica (e.g. photosensitive impurities, scratches and redeposited silica compounds) were mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respectively. The comparison of scratches morphology after static etching and high-frequency ultrasonic agitation etching was devoted in our case. And comparison of laser induce damage resistance of scratched and non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were also investigated in this study. The global laser induce damage resistance was increased significantly after the laser damage precursors were mitigated in this case. The redeposition of reaction produce was avoided by involving multi-frequency ultrasonic and chemical leaching process. These methods made the increase of laser damage threshold more stable. In addition, there is no scratch related damage initiations found on the samples which were treated by Advanced Mitigation Process.

Advanced Mitigation Process (AMP) for Improving Laser Damage Threshold of Fused Silica Optics

PubMed Central

Ye, Xin; Huang, Jin; Liu, Hongjie; Geng, Feng; Sun, Laixi; Jiang, Xiaodong; Wu, Weidong; Qiao, Liang; Zu, Xiaotao; Zheng, Wanguo

2016-01-01

The laser damage precursors in subsurface of fused silica (e.g. photosensitive impurities, scratches and redeposited silica compounds) were mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respectively. The comparison of scratches morphology after static etching and high-frequency ultrasonic agitation etching was devoted in our case. And comparison of laser induce damage resistance of scratched and non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were also investigated in this study. The global laser induce damage resistance was increased significantly after the laser damage precursors were mitigated in this case. The redeposition of reaction produce was avoided by involving multi-frequency ultrasonic and chemical leaching process. These methods made the increase of laser damage threshold more stable. In addition, there is no scratch related damage initiations found on the samples which were treated by Advanced Mitigation Process. PMID:27484188

Selective etching of InGaAs/GaAs(100) multilayers of quantum-dot chains

NASA Astrophysics Data System (ADS)

Wang, Zh. M.; Zhang, L.; Holmes, K.; Salamo, G. J.

2005-04-01

We report selective chemical etching as a promising procedure to study the buried quantum dots in multiple InGaAs/GaAs layers. The dot layer-by-dot layer etching is demonstrated using a mixed solution of NH4OH:H2O2:H2O. Regular plan-view atomic force microscopy reveals that all of the exposed InGaAs layers have a chain-like lateral ordering despite the potential of significant In-Ga intermixing during capping. The vertical self-correlation of quantum dots in the chains is observed.

Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chun, Dong Won; Kim, Tae Kyoung; Choi, Duyoung; Caldwell, Elizabeth; Kim, Young Jin; Paik, Jae Cheol; Jin, Sungho; Chen, Renkun

2016-11-01

In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.

TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

NASA Astrophysics Data System (ADS)

Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-03-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is proposed to enable sufficient inhibiting strength and improved profile control up to room temperature. Pulsed-mode processing, the second important aspect, is commonly performed in a cycle using two separate steps: etch and deposition. Sometimes, a three-step cycle is adopted using a separate step to clean the bottom of etching features. This study highlights an issue, known by the authors but not discussed before in the literature: the need for proper synchronization between gas and bias pulses to explore the benefit of three steps. The transport of gas from the mass flow controller towards the wafer takes time, whereas the application of bias to the wafer is relatively instantaneous. This delay causes a problem with respect to synchronization when decreasing the step time towards a value close to the gas residence time. It is proposed to upgrade the software with a delay time module for the bias pulses to be in pace with the gas pulses. If properly designed, the delay module makes it possible to switch on the bias exactly during the arrival of the gas for the bottom removal step and so it will minimize the ionic impact because now etch and deposition steps can be performed virtually without bias. This will increase the mask etch selectivity and lower the heat impact significantly. Moreover, the extra bottom removal step can be performed at (also synchronized!) low pressure and therefore opens a window for improved aspect ratios. The temperature control of the wafer, a third aspect of this study, at a higher etch rate and longer etch time, needs critical attention, because it drastically limits the DRIE performance. It is stressed that the exothermic reaction (high silicon loading) and ionic impact (due to metallic masks and/or exposed silicon) are the main sources of heat that might raise the wafer temperature uncontrollably, and they show the weakness of the helium backside technique using mechanical clamping. Electrostatic clamping, an alternative technique, should minimize this problem because it is less susceptible to heat transfer when its thermal resistance and the gap of the helium backside cavity are minimized; however, it is not a subject of the current study. Because oxygen-growth-based etch processes (due to their ultra thin inhibiting layer) rely more heavily on a constant wafer temperature than fluorocarbon-based processes, oxygen etches are more affected by temperature fluctuations and drifts during the etching. The fourth outcome of this review is a phenomenological model, which explains and predicts many features with respect to loading, flow and pressure behaviour in DRIE equipment including a diffusion zone. The model is a reshape of the flow model constructed by Mogab, who studied the loading effect in plasma etching. Despite the downside of needing a cryostat, it is shown that—when selecting proper conditions—a cryogenic two-step pulsed mode can be used as a successful technique to achieve high speed and selective plasma etching with an etch rate around 25 µm min-1 (<1% silicon load) with nearly vertical walls and resist etch selectivity beyond 1000. With the model in hand, it can be predicted that the etch rate can be doubled (50 µm min-1 at an efficiency of 33% for the fluorine generation from the SF6 feed gas) by minimizing the time the free radicals need to pass the diffusion zone. It is anticipated that this residence time can be reduced sufficiently by a proper inductive coupled plasma (ICP) source design (e.g. plasma shower head and concentrator). In order to preserve the correct profile at such high etch rates, the pressure during the bottom removal step should be minimized and, therefore, the synchronized three-step pulsed mode is believed to be essential to reach such high etch rates with sufficient profile control. In order to improve the etch rate even further, the ICP power should be enhanced; the upgrading of the turbopump seems not yet to be relevant because the throttle valve in the current study had to be used to restrict the turbo efficiency. In order to have a versatile list of state-of-the-art references, it has been decided to arrange it in subjects. The categories concerning plasma physics and applications are, for example, books, reviews, general topics, fluorine-based plasmas, plasma mixtures with oxygen at room temperature, wafer heat transfer and high aspect ratio trench (HART) etching. For readers 'new' to this field, it is advisable to study at least one (but rather more than one) of the reviews concerning plasma as found in the first 30 references. In many cases, a paper can be classified into more than one category. In such cases, the paper is directed to the subject most suited for the discussion of the current review. For example, many papers on heat transfer also treat cryogenic conditions and all the references dealing with highly anisotropic behaviour have been directed to the category HARTs. Additional pointers could get around this problem but have the disadvantage of creating a kind of written spaghetti. I hope that the adapted organization structure will help to have a quick look at and understanding of current developments in high aspect ratio plasma etching. Enjoy reading... Henri Jansen 18 June 2008

Microfluidic routing of aqueous and organic flows at high pressures: fabrication and characterization of integrated polymer microvalve elements.

PubMed

Kirby, Brian J; Reichmuth, David S; Renzi, Ronald F; Shepodd, Timothy J; Wiedenman, Boyd J

2005-02-01

This paper presents the first systematic engineering study of the impact of chemical formulation and surface functionalization on the performace of free-standing microfluidic polymer elements used for high-pressure fluid control in glass microsystems. System design, chemical wet-etch processes, and laser-induced polymerization techniques are described, and parametric studies illustrate the effects of polymer formulation, glass surface modification, and geometric constraints on system performance parameters. In particular, this study shows that highly crosslinked and fluorinated polymers can overcome deficiencies in previously-reported microvalve architectures, particularly limited solvent compatibility. Substrate surface modification is shown effective in reducing the friction of the polymer-glass interface and thereby facilitating valve actuation. A microchip one-way valve constructed using this architecture shows a 2 x 10(8) ratio of forward and backward flow rates at 7 MPa. This valve architecture is integrated on chip with minimal dead volumes (70 pl), and should be applicable to systems (including chromatography and chemical synthesis devices) requiring high pressures and solvents of varying polarity.

Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

ERIC Educational Resources Information Center

Gerber, Ralph W.; Oliver-Hoyo, Maria T.

2008-01-01

This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

Enlargement of halloysite clay nanotube lumen by selective etching of aluminum oxide.

PubMed

Abdullayev, Elshad; Joshi, Anupam; Wei, Wenbo; Zhao, Yafei; Lvov, Yuri

2012-08-28

Halloysite clay tubes have 50 nm diameter and chemically different inner and outer walls (inner surface of aluminum oxide and outer surface of silica). Due to this different chemistry, the selective etching of alumina from inside the tube was realized, while preserving their external diameter (lumen diameter changed from 15 to 25 nm). This increases 2-3 times the tube lumen capacity for loading and further sustained release of active chemical agents such as metals, corrosion inhibitors, and drugs. In particular, halloysite loading efficiency for the benzotriazole increased 4 times by selective etching of 60% alumina within the tubes' lumens. Specific surface area of the tubes increased over 6 times, from 40 to 250 m(2)/g, upon acid treatment.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

NASA Astrophysics Data System (ADS)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Pattern sampling for etch model calibration

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2017-06-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels -"internal, external, curvature, Gaussian, z_profile" - designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel "z_profile" which adds a third dimension to the description of the resist profile.

Plasmonic activity on gold nanoparticles embedded in nanopores formed in a surface layer of silica glass by swift-heavy-ion irradiation.

PubMed

Nomura, Ken-ichi; Ohki, Yoshimichi; Fujimaki, Makoto; Wang, Xiaomin; Awazu, Koichi; Komatsubara, Tetsuro

2009-11-25

Silica glass was irradiated by swift heavy ions by selecting the ion species and its energy in order to induce the largest damaged regions. These regions were then selectively etched by hydrofluoric acid vapour to form nanopores on the glass surface. Subsequently, gold nanoparticles were embedded into the nanopores by vacuum evaporation, followed by thermal treatment. In the new plasmonic structure obtained with these procedures, the localized surface plasmon excitation wavelength induced around the gold nanoparticles was found to show a redshift, which agreed well with the theoretical calculation, when water was introduced into the nanopores. This indicates that the fabricated structure can be used as a sensing element to detect the adhesion of substances such as biomolecules to the nanoparticles by measuring the redshift.

Reactive ion etching of GaN using BCl 3, BCl 3/Ar and BCl 3/ N 2 gas plasmas

NASA Astrophysics Data System (ADS)

Basak, D.; Nakanishi, T.; Sakai, S.

2000-04-01

Reactive ion etching (RIE) of GaN has been performed using BCl 3 and additives, Ar and N 2, to BCl 3 plasma. The etch rate, surface roughness and the etch profile have been investigated. The etch rate of GaN is found to be 104 nm/min at rf power of 200 W, pressure of 2 Pa, with 9.5 sccm flow rate of BCl 3. The addition of 5 sccm of Ar to 9.5 sccm of BCl 3 reduces the etch rate of GaN while the addition of N 2 does not influence the etch rate significantly. The RIE of GaN layer with BCl 3/Ar and BCl 3/N 2 results in a smoother surface compared to surfaces etched with BCl 3 only. The etched side-wall in BCl 3 plasma makes an angle of 60° with the normal surface, and the angle of inclination is more in cases of BCl 3/Ar and BCl 3/N 2 plasmas. The RIE induced damage to the surface is measured qualitatively by PL measurements. It is observed that the damage to the etched surfaces is similar for all the plasmas.

Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

NASA Astrophysics Data System (ADS)

Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

2018-06-01

The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

Bond efficacy and interface morphology of self-etching adhesives to ground enamel.

PubMed

Abdalla, Ali I; El Zohairy, Ahmed A; Abdel Mohsen, Mohamed M; Feilzer, Albert J

2010-02-01

This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) and Hybrid bond (Sun-Medical), a self-etching primer, Clearfil SE Bond (Kuraray), and an etch-and-rinse system, Admira Bond (Voco), were selected. Thirty human molars were used. The root of each tooth was removed and the crown was sectioned into halves. The convex enamel surfaces were reduced by polishing on silicone paper to prepare a flat surface. The bonding systems were applied on this surface. Prior to adhesive curing, a hollow cylinder (2.0 mm height/0.75 mm internal diameter) was placed on the treated surfaces. A resin composite was then inserted into the tube and cured. After water storage for 24 h, the tube was removed and shear bond strength was determined in a universal testing machine at a crosshead speed of 0.5 mm/min. The results were analyzed with ANOVA and the Tukey.-Kramer test at a 59 degrees confidence level. The enamel of five additional teeth was ground, and the etching component of each adhesive was applied and removed with absolute ethanol instead of being light cured. These teeth and selected fractured surfaces were examined by SEM. Adhesion to ground enamel of the Futurabond DC (25 +/- 3.5 MPa) and Clearfil SE Bond (23 +/- 2.9 MPa) self-etching systems was not significantly different from the etch-and-rinse system Admira Bond (27 +/- 2.3 MPa). The two self-etching adhesives Clearfil S Tri bond and Hybrid Bond demonstrated significantly lower bond strengths (14 +/- 1.4 MPa; 11 +/- 1.9 MPa) with no significant differences between them (p < 0.05). Bond strengths to ground enamel of self-etching adhesive systems are dependent on the type of adhesive system. Some of the new adhesive systems showed bond strength values comparable to that of etch-and-rinse systems. There was no correlation between bond strength and morphological changes in enamel.

Lateral position detection and control for friction stir systems

DOEpatents

Fleming, Paul; Lammlein, David; Cook, George E.; Wilkes, Don Mitchell; Strauss, Alvin M.; Delapp, David; Hartman, Daniel A.

2010-12-14

A friction stir system for processing at least a first workpiece includes a spindle actuator coupled to a rotary tool comprising a rotating member for contacting and processing the first workpiece. A detection system is provided for obtaining information related to a lateral alignment of the rotating member. The detection system comprises at least one sensor for measuring a force experienced by the rotary tool or a parameter related to the force experienced by the rotary tool during processing, wherein the sensor provides sensor signals. A signal processing system is coupled to receive and analyze the sensor signals and determine a lateral alignment of the rotating member relative to a selected lateral position, a selected path, or a direction to decrease a lateral distance relative to the selected lateral position or selected path. In one embodiment, the friction stir system can be embodied as a closed loop tracking system, such as a robot-based tracked friction stir welding (FSW) or friction stir processing (FSP) system.

Fabrication of sub-diffraction-limit molecular structures by scanning near-field photolithography

NASA Astrophysics Data System (ADS)

Ducker, Robert E.; Montague, Matthew T.; Sun, Shuqing; Leggett, Graham J.

2007-09-01

Using a scanning near-field optical microscope coupled to a UV laser, an approach we term scanning near-field photolithography (SNP), structures as small as 9 nm (ca. λ/30) may be fabricated in self-assembled monolayers of alkanethiols on gold surfaces. Selective exposure of the adsorbate molecules in the near field leads to photoconversion of the alkylthiolate to a weakly bound alkylsulfonate which may be displaced readily be a contrasting thiol, leading to a chemical pattern, or used as a resist for the selective etching of the underlying metal. A novel ultra-mild etch for gold is reported, and used to etch structures as small as 9 nm. Photopatterning of oligo(ethylene glycol) (OEG) terminated selfassembled monolayers facilitates the fabrication of biomolecular nanostructures. Selective removal of the protein-resistant OEG terminated adsorbates created regions that may be functionalized with a second thiol and derivatized with a biomolecule. Finally, the application of SNP to nanopatterning on oxide surfaces is demonstrated. Selective exposure of monolayers of phosphonic acids adsorbed onto aluminum oxide leads to cleavage of the P-C bond and desorption of the adsorbate molecule. Subsequent etching, using aqueous based, yields structures as small as 100 nm.

Characteristics of pulsed dual frequency inductively coupled plasma

NASA Astrophysics Data System (ADS)

Seo, Jin Seok; Kim, Kyoung Nam; Kim, Ki Seok; Kim, Tae Hyung; Yeom, Geun Young

2015-01-01

To control the plasma characteristics more efficiently, a dual antenna inductively coupled plasma (DF-ICP) source composed of a 12-turn inner antenna operated at 2 MHz and a 3-turn outer antenna at 13.56 MHz was pulsed. The effects of pulsing to each antenna on the change of plasma characteristics and SiO2 etch characteristics using Ar/C4F8 gas mixtures were investigated. When the duty percentage was decreased from continuous wave (CW) mode to 30% for the inner or outer ICP antenna, decrease of the average electron temperature was observed for the pulsing of each antenna. Increase of the CF2/F ratio was also observed with decreasing duty percentage of each antenna, indicating decreased dissociation of the C4F8 gas due to the decreased average electron temperature. When SiO2 etching was investigated as a function of pulse duty percentage, increase of the etch selectivity of SiO2 over amorphous carbon layer (ACL) was observed while decreasing the SiO2 etch rate. The increase of etch selectivity was related to the change of gas dissociation characteristics, as observed by the decrease of average electron temperature and consequent increase of the CF2/F ratio. The decrease of the SiO2 etch rate could be compensated for by using the rf power compensated mode, that is, by maintaining the same time-average rf power during pulsing, instead of using the conventional pulsing mode. Through use of the power compensated mode, increased etch selectivity of SiO2/ACL similar to the conventional pulsing mode could be observed without significant decrease of the SiO2 etch rate. Finally, by using the rf power compensated mode while pulsing rf powers to both antennas, the plasma uniformity over the 300 mm diameter substrate could be improved from 7% for the CW conditions to about around 3.3% with the duty percentage of 30%.

Surface effects on friction-induced fluid heating in nanochannel flows.

PubMed

Li, Zhigang

2009-02-01

We investigate the mechanism of friction-induced fluid heating under the influence of surfaces. The temperature distributions of liquid argon and helium in nanoscale Poiseuille flows are studied through molecular dynamics simulations. It is found that the fluid heating is mainly caused by the viscous friction in the fluid when the external force is small and there is no slip at the fluid-solid interface. When the external force is larger than the fluid-surface binding force, the friction at the fluid-solid interface dominates over the internal friction of the fluid and is the major contribution to fluid heating. An asymmetric temperature gradient in the fluid is developed in the case of nonidentical walls and the general temperature gradient may change sign as the dominant heating factor changes from internal to interfacial friction with increasing external force. The effect of temperature on the fluid heating is also discussed.

Piezoelectric power generation using friction-induced vibration

NASA Astrophysics Data System (ADS)

Tadokoro, Chiharu; Matsumoto, Aya; Nagamine, Takuo; Sasaki, Shinya

2017-06-01

In order to examine the feasibility of power generation by using friction-induced vibration with a piezoelectric element, we performed experiments and numerical analysis. In the experiments, the generated power in the piezoelectric element and the displacement of an oscillator were measured by a newly developed apparatus that embodied a single-degree-of-freedom (1-DOF) system with friction. In the numerical analysis, an analytical model of a 1-DOF system with friction and piezoelectric element was proposed to simulate the experiments. The experimental results demonstrated that the power of a few microwatts was generated by sliding between a steel ball and a steel plate lubricated with glycerol. In this study, a maximum power of approximately 10 μW was generated at a driving velocity of 40 mm s-1 and a normal load of 15 N. The numerical results demonstrated good qualitative agreement with the experimental results. This implies that this analytical model can be applied to optimize the oscillator design in piezoelectric power generation using friction-induced vibration.

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

NASA Astrophysics Data System (ADS)

Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

2015-12-01

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Optical monitor for real time thickness change measurements via lateral-translation induced phase-stepping interferometry

DOEpatents

Rushford, Michael C.

2002-01-01

An optical monitoring instrument monitors etch depth and etch rate for controlling a wet-etching process. The instrument provides means for viewing through the back side of a thick optic onto a nearly index-matched interface. Optical baffling and the application of a photoresist mask minimize spurious reflections to allow for monitoring with extremely weak signals. A Wollaston prism enables linear translation for phase stepping.

Improving contact layer patterning using SEM contour based etch model

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka; Hertzsch, Tino; Moll, Hans-Peter

2016-10-01

The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex shapes that can hardly be compensated with etch bias table and are difficult to characterize with standard CD metrology. In this work we propose to implement a model based etch compensation method able to deal with any contact configuration. With the help of SEM contours, it was possible to get reliable 2D measurements particularly helpful to calibrate the etch model. The selections of calibration structures was optimized in combination with model form to achieve an overall errRMS of 3nm allowing the implementation of the model in production.

Process for etching mixed metal oxides

DOEpatents

Ashby, Carol I. H.; Ginley, David S.

1994-01-01

An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

NASA Astrophysics Data System (ADS)

Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

2018-01-01

In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Nanoparticle-based etching of silicon surfaces

DOEpatents

Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

2011-12-13

A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

The Load and Time Dependence of Chemical Bonding-Induced Frictional Ageing of Silica at the Nanoscale

NASA Astrophysics Data System (ADS)

Tian, K.; Gosvami, N. N.; Goldsby, D. L.; Carpick, R. W.

2015-12-01

Rate and state friction (RSF) laws are empirical relationships that describe the frictional behavior of rocks and other materials in experiments, and reproduce a variety of observed natural behavior when employed in earthquake models. A pervasive observation from rock friction experiments is the linear increase of static friction with the log of contact time, or 'ageing'. Ageing is usually attributed to an increase in real area of contact associated with asperity creep. However, recent atomic force microscopy (AFM) experiments demonstrate that ageing of nanoscale silica-silica contacts is due to progressive formation of interfacial chemical bonds in the absence of plastic deformation, in a manner consistent with the multi-contact ageing behavior of rocks [Li et al., 2011]. To further investigate chemical bonding-induced ageing, we explored the influence of normal load (and thus contact normal stress) and contact time on ageing. Experiments that mimic slide-hold-slide rock friction experiments were conducted in the AFM for contact loads and hold times ranging from 23 to 393 nN and 0.1 to 100 s, respectively, all in humid air (~50% RH) at room temperature. Experiments were conducted by sequentially sliding the AFM tip on the sample at a velocity V of 0.5 μm/s, setting V to zero and holding the tip stationary for a given time, and finally resuming sliding at 0.5 μm/s to yield a peak value of friction followed by a drop to the sliding friction value. Chemical bonding-induced ageing, as measured by the peak friction minus the sliding friction, increases approximately linearly with the product of normal load and the log of the hold time. Theoretical studies of the roles of reaction energy barriers in nanoscale ageing indicate that frictional ageing depends on the total number of reaction sites and the hold time [Liu & Szlufarska, 2012]. We combine chemical kinetics analyses with contact mechanics models to explain our results, and develop a new approach for curve fitting ageing vs. load data which shows that the friction drop data points all fall on a master curve. The analysis yields physically reasonable values for the activation energy and activation volume of the chemical bonding process. Our study provides a basis to hypothesize that the kinetic processes in chemical bonding-induced ageing do not depend strongly on normal load.

The Selective Epitaxy of Silicon at Low Temperatures.

NASA Astrophysics Data System (ADS)

Lou, Jen-Chung

1991-01-01

This dissertation has developed a process for the selective epitaxial growth (SEG) of silicon at low temperatures using a dichlorosilane-hydrogen mixture in a hot-wall low pressure chemical vapor deposition (LPCVD) reactor. Some basic issues concerning the quality of epilayers --substrate preparation, ex-situ and in-situ cleaning, and deposition cycle, have been studied. We find it necessary to use a plasma etch to open epitaxial windows for the SEG of Si. A cycled plasma etch, a thin sacrificial oxide growth, and an oxide etching step can completely remove plasma-etch-induced surface damage and contaminants, which result in high quality epilayers. A practical wafer cleaning step is developed for low temperature Si epitaxial growth. An ex-situ HF vapor treatment can completely remove chemical oxide from the silicon surface and retard the reoxidation of the silicon surface. An in-situ low-concentration DCS cycle can aid in decomposition of surface oxide during a 900 ^circC H_2 prebake step. An HF vapor treatment combined with a low-concentration of DCS cycle consistently achieves defect-free epilayers at 850^circC and lower temperatures. We also show that a BF_sp{2}{+ } or F^+ ion implantation is a potential ex-situ wafer cleaning process for SEG of Si at low temperatures. The mechanism for the formation of surface features on Si epilayers is also discussed. Based on O ^+ ion implantation, we showed that the oxygen incorporation in silicon epilayers suppresses the Si growth rate. Therefore, we attribute the formation of surface features to the local reduction of the Si growth rate due to the dissolution of oxide islands at the epi/substrate interface. Finally, with this developed process for the SEG of silicon, defect-free overgrown epilayers are also obtained. This achievement demonstrates the feasibility for the future silicon-on-oxide (SOI) manufacturing technology.

Characterization of power induced heating and damage in fiber optic probes for near-field scanning optical microscopy

NASA Astrophysics Data System (ADS)

Dickenson, Nicholas E.; Erickson, Elizabeth S.; Mooren, Olivia L.; Dunn, Robert C.

2007-05-01

Tip-induced sample heating in near-field scanning optical microscopy (NSOM) is studied for fiber optic probes fabricated using the chemical etching technique. To characterize sample heating from etched NSOM probes, the spectra of a thermochromic polymer sample are measured as a function of probe output power, as was previously reported for pulled NSOM probes. The results reveal that sample heating increases rapidly to ˜55-60°C as output powers reach ˜50nW. At higher output powers, the sample heating remains approximately constant up to the maximum power studied of ˜450nW. The sample heating profiles measured for etched NSOM probes are consistent with those previously measured for NSOM probes fabricated using the pulling method. At high powers, both pulled and etched NSOM probes fail as the aluminum coating is damaged. For probes fabricated in our laboratory we find failure occurring at input powers of 3.4±1.7 and 20.7±6.9mW for pulled and etched probes, respectively. The larger half-cone angle for etched probes (˜15° for etched and ˜6° for pulled probes) enables more light delivery and also apparently leads to a different failure mechanism. For pulled NSOM probes, high resolution images of NSOM probes as power is increased reveal the development of stress fractures in the coating at a taper diameter of ˜6μm. These stress fractures, arising from the differential heating expansion of the dielectric and the metal coating, eventually lead to coating removal and probe failure. For etched tips, the absence of clear stress fractures and the pooled morphology of the damaged aluminum coating following failure suggest that thermal damage may cause coating failure, although other mechanisms cannot be ruled out.

Characterization of power induced heating and damage in fiber optic probes for near-field scanning optical microscopy.

PubMed

Dickenson, Nicholas E; Erickson, Elizabeth S; Mooren, Olivia L; Dunn, Robert C

2007-05-01

Tip-induced sample heating in near-field scanning optical microscopy (NSOM) is studied for fiber optic probes fabricated using the chemical etching technique. To characterize sample heating from etched NSOM probes, the spectra of a thermochromic polymer sample are measured as a function of probe output power, as was previously reported for pulled NSOM probes. The results reveal that sample heating increases rapidly to approximately 55-60 degrees C as output powers reach approximately 50 nW. At higher output powers, the sample heating remains approximately constant up to the maximum power studied of approximately 450 nW. The sample heating profiles measured for etched NSOM probes are consistent with those previously measured for NSOM probes fabricated using the pulling method. At high powers, both pulled and etched NSOM probes fail as the aluminum coating is damaged. For probes fabricated in our laboratory we find failure occurring at input powers of 3.4+/-1.7 and 20.7+/-6.9 mW for pulled and etched probes, respectively. The larger half-cone angle for etched probes ( approximately 15 degrees for etched and approximately 6 degrees for pulled probes) enables more light delivery and also apparently leads to a different failure mechanism. For pulled NSOM probes, high resolution images of NSOM probes as power is increased reveal the development of stress fractures in the coating at a taper diameter of approximately 6 microm. These stress fractures, arising from the differential heating expansion of the dielectric and the metal coating, eventually lead to coating removal and probe failure. For etched tips, the absence of clear stress fractures and the pooled morphology of the damaged aluminum coating following failure suggest that thermal damage may cause coating failure, although other mechanisms cannot be ruled out.

Crystal structure of laser-induced subsurface modifications in Si

NASA Astrophysics Data System (ADS)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in't Veld, A. J.

2015-08-01

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si -iii/Si -xii occur as a result of the laser irradiation.

Effect of velocity-dependent friction on multiple-vehicle collisions in traffic flow

NASA Astrophysics Data System (ADS)

Nagatani, Takashi

2017-01-01

We present the dynamic model for the multiple-vehicle collisions to take into account the velocity-dependent friction force. We study the effect of the velocity-dependent friction on the chain-reaction crash on a road. In the traffic situation, drivers brake according to taillights of the forward vehicle and the friction force depends highly on the vehicular speed. The first crash may induce more collisions. We investigate whether or not the first collision induces the multiple-vehicle collisions, numerically and analytically. The dynamic transitions occur from no collisions, through a single collision and double collisions, to multiple collisions with decreasing the headway. We explore the effect of the velocity-dependent friction on the dynamic transitions and the region maps in the multiple-vehicle collisions.

Process for Smoothing an Si Substrate after Etching of SiO2

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations.

PubMed

Stehle, Yijing Y; Sang, Xiahan; Unocic, Raymond R; Voylov, Dmitry; Jackson, Roderick K; Smirnov, Sergei; Vlassiouk, Ivan

2017-12-13

Chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes in hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.

Composition and conductance distributions of single GeSi quantum rings studied by conductive atomic force microscopy combined with selective chemical etching.

PubMed

Lv, Y; Cui, J; Jiang, Z M; Yang, X J

2013-02-15

Atomic force microscopy imaging combined with selective chemical etching is employed to quantitatively investigate three-dimensional (3D) composition distributions of single GeSi quantum rings (QRs). In addition, the 3D quantitative composition distributions and the corresponding conductance distributions are simultaneously obtained on the same single GeSi QRs by conductive atomic force microscopy combined with selective chemical etching, allowing us to investigate the correlations between the conductance and composition distributions of single QRs. The results show that the QRs' central holes have higher Ge content, but exhibit lower conductance, indicating that the QRs' conductance distribution is not consistent with their composition distribution. By comparing the topography, composition and conductance profiles of the same single QRs before and after different etching processes, it is found that the conductance distributions of GeSi QRs do not vary with the change of composition distribution. Instead, the QRs' conductance distributions are found to be consistent with their topographic shapes, which can be supposed to be due to the shape determined electronic structures.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage.

PubMed

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage

PubMed Central

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

Purpose: This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. Materials and Methods: The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. Results: The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). Conclusions: When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond. PMID:29674814

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Spadoni, A.; Antonaia, A.

2013-12-01

Double-textured ZnO:B layers with enhanced optical scattering in both short and long wavelength regions have been successfully fabricated using MOCVD technique through a three step process. Growth of double-textured structures has been induced by wet etching on polycrystalline ZnO surface. Our double-layer structure consists of a first ZnO:B layer wet etched and subsequently used as substrate for a second ZnO:B layer deposition. Polycrystalline ZnO:B layers were etched by utilizing diluted solutions of fluoridic acid (HF), chloridric acid (HCl) and phosphoric acid (H3PO4) and their effect on surface morphology modification was systematically investigated. The morphology of the second deposited ZnO layer strongly depended on the surface properties of the etched ZnO first layer. Growth of cauliflower-like texture was induced by protrusions presence on the HCl etched surface. Optimized double-layer structure shows a cauliflower-like double texture with higher RMS roughness and increased spectral haze values in both short and long wavelength regions, compared to conventional pyramidal-like single texture. Furthermore, this highly scattering structure preserves excellent optical and electrical properties.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Optical-fiber strain sensors with asymmetric etched structures.

PubMed

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa

2013-10-14

Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachmentmore » properties.« less

Electron-beam induced nano-etching of suspended graphene

PubMed Central

Sommer, Benedikt; Sonntag, Jens; Ganczarczyk, Arkadius; Braam, Daniel; Prinz, Günther; Lorke, Axel; Geller, Martin

2015-01-01

Besides its interesting physical properties, graphene as a two-dimensional lattice of carbon atoms promises to realize devices with exceptional electronic properties, where freely suspended graphene without contact to any substrate is the ultimate, truly two-dimensional system. The practical realization of nano-devices from suspended graphene, however, relies heavily on finding a structuring method which is minimally invasive. Here, we report on the first electron beam-induced nano-etching of suspended graphene and demonstrate high-resolution etching down to ~7 nm for line-cuts into the monolayer graphene. We investigate the structural quality of the etched graphene layer using two-dimensional (2D) Raman maps and demonstrate its high electronic quality in a nano-device: A 25 nm-wide suspended graphene nanoribbon (GNR) that shows a transport gap with a corresponding energy of ~60 meV. This is an important step towards fast and reliable patterning of suspended graphene for future ballistic transport, nano-electronic and nano-mechanical devices. PMID:25586495

Single-crystal silicon trench etching for fabrication of highly integrated circuits

NASA Astrophysics Data System (ADS)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Process for etching mixed metal oxides

DOEpatents

Ashby, C.I.H.; Ginley, D.S.

1994-10-18

An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

New test structures and techniques for measurement of mechanical properties of MEMS materials

NASA Astrophysics Data System (ADS)

Sharpe, William N., Jr.; Yuan, Bin; Vaidyanathan, Ranji; Edwards, Richard L.

1996-09-01

This paper presents techniques and procedures for addressing the three major problems of mechanical testing of the thin films used in surface micromachined microelectromechanical systems--specimen handling, friction, and strain measurement. The polysilicon tensile specimens are fabricated with two supporting side strips on silicon wafers at the Microelectronic Center of North Carolina. The tensile specimen is released by etching away the wafer, and the two support strips are cut after the specimen is glued in the test machine. Friction is reduced by a linear air bearing in the load train, and strain is measured with a noncontacting technique based on laser interferometry between two gold lines on the tensile specimen. The Young's modulus of polysilicon is 170 +/- 7 GPa and the strength is 1.21 +/- 0.16 GPa from a series of 29 tests. preliminary measurements have been made of Poisson's ratio and the fatigue behavior, and an attempt is underway to measure the fracture toughness.

An Investigation of the Wear on Silicon Surface at High Humidity.

PubMed

Wang, Xiaodong; Guo, Jian; Xu, Lin; Cheng, Guanggui; Qian, Linmao

2018-06-16

Using an atomic force microscope (AFM), the wear of monocrystalline silicon (covered by a native oxide layer) at high humidity was investigated. The experimental results indicated that tribochemistry played an important role in the wear of the silicon at different relative humidity levels (RH = 60%, 90%). Since the tribochemical reactions were facilitated at 60% RH, the wear of silicon was serious and the friction force was around 1.58 μN under the given conditions. However, the tribochemical reactions were restrained when the wear pair was conducted at high humidity. As a result, the wear of silicon was very slight and the friction force decreased to 0.85 μN at 90% RH. The slight wear of silicon at high humidity was characterized by etching tests. It was demonstrated that the silicon sample surface was partly damaged and the native oxide layer on silicon sample surface had not been totally removed during the wear process. These results may help us optimize the tribological design of dynamic microelectromechanical systems working in humid conditions.

Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

NASA Astrophysics Data System (ADS)

Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru

2018-04-01

In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF6/CHF3/Ar and Cl2/BCl3/Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

Friction-Induced Changes in the Surface Structure of Basalt and Granite

NASA Astrophysics Data System (ADS)

Vettegren, V. I.; Arora, K.; Ponomarev, A. V.; Mamalimov, R. I.; Shcherbakov, I. P.; Kulik, V. B.

2018-05-01

Friction-induced changes in the structure of the surface layer of basalt and granite samples extracted from a well in the triggered seismicity zone in the Koyna-Warna region, India, have been studied by infrared, Raman, and photoluminescence spectroscopy. It has been found that friction leads to a partial degradation of quartz, albite, and clinopyroxenes crystals. Instead of these crystals, a thin layer of a mineral with a low coefficient of friction—kaolinite—is formed on the surface.

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

NASA Astrophysics Data System (ADS)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

Resistless lithography - selective etching of silicon with gallium doping regions

NASA Astrophysics Data System (ADS)

Abdullaev, D.; Milovanov, R.; Zubov, D.

2016-12-01

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.

2016-10-15

The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

High speed micro scanner for 3D in-volume laser micro processing

NASA Astrophysics Data System (ADS)

Schaefer, D.; Gottmann, J.; Hermans, M.; Ortmann, J.; Kelbassa, I.

2013-03-01

Using an in-house developed micro scanner three-dimensional micro components and micro fluidic devices in fused silica are realized using the ISLE process (in-volume selective laser-induced etching). With the micro scanner system the potential of high average power femtosecond lasers (P > 100 W) is exploited by the fabrication of components with micrometer precision at scan speeds of several meters per second. A commercially available galvanometer scanner is combined with an acousto-optical and/or electro-optical beam deflector and translation stages. For focusing laser radiation high numerical aperture microscope objectives (NA > 0.3) are used generating a focal volume of a few cubic micrometers. After laser exposure the materials are chemically wet etched in aqueous solution. The laser-exposed material is etched whereas the unexposed material remains nearly unchanged. Using the described technique called ISLE the fabrication of three-dimensional micro components, micro holes, cuts and channels is possible with high average power femtosecond lasers resulting in a reduced processing time for exposure. By developing the high speed micro scanner up-scaling of the ISLE process is demonstrated. The fabricated components made out of glass can be applied in various markets like biological and medical diagnostics as well as in micro mechanics.

Impact of an irregular friction formulation on dynamics of a minimal model for brake squeal

NASA Astrophysics Data System (ADS)

Stender, Merten; Tiedemann, Merten; Hoffmann, Norbert; Oberst, Sebastian

2018-07-01

Friction-induced vibrations are of major concern in the design of reliable, efficient and comfortable technical systems. Well-known examples for systems susceptible to self-excitation can be found in fluid structure interaction, disk brake squeal, rotor dynamics, hip implants noise and many more. While damping elements and amplitude reduction are well-understood in linear systems, nonlinear systems and especially self-excited dynamics still constitute a challenge for damping element design. Additionally, complex dynamical systems exhibit deterministic chaotic cores which add severe sensitivity to initial conditions to the system response. Especially the complex friction interface dynamics remain a challenging task for measurements and modeling. Today, mostly simple and regular friction models are investigated in the field of self-excited brake system vibrations. This work aims at investigating the effect of high-frequency irregular interface dynamics on the nonlinear dynamical response of a self-excited structure. Special focus is put on the characterization of the system response time series. A low-dimensional minimal model is studied which features self-excitation, gyroscopic effects and friction-induced damping. Additionally, the employed friction formulation exhibits temperature as inner variable and superposed chaotic fluctuations governed by a Lorenz attractor. The time scale of the irregular fluctuations is chosen one order smaller than the overall system dynamics. The influence of those fluctuations on the structural response is studied in various ways, i.e. in time domain and by means of recurrence analysis. The separate time scales are studied in detail and regimes of dynamic interactions are identified. The results of the irregular friction formulation indicate dynamic interactions on multiple time scales, which trigger larger vibration amplitudes as compared to regular friction formulations conventionally studied in the field of friction-induced vibrations.

Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sun, Jason N.; Choi, Kwong-Kit; Olver, Kimberley A.; Fu, Richard X.

2017-05-01

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Semiconductor structure and recess formation etch technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kafka, Kyle R. P.; Hoffman, Brittany N.; Papernov, Semyon

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Lastly, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of ~3, while maintaining <1-nm surface roughness.

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

NASA Astrophysics Data System (ADS)

Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

2017-10-01

Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF{sub 3}/HBr/O{sub 2} and Cl{sub 2}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, Yuan-Hung, E-mail: yhtseng.ee99g@nctu.edu.tw; Tsui, Bing-Yue

2014-05-15

In this paper, the authors performed a reactive ion etch of a 4H-SiC substrate with a gas mixture of NF{sub 3}, HBr, and O{sub 2}, resulting in a microtrenching-free etch. The etch rate was 107.8 nm/min, and the selectivity over the oxide hard mask was ∼3.85. Cross-sectional scanning electron microscopy showed no microtrenching compared with etches using plasmas of NF{sub 3}, NF{sub 3}/HBr, and NF{sub 3}/O{sub 2}. Analyzing a variety of HBr/O{sub 2} mixing ratios, the authors discuss the additive effect of each gas and their respective potential mechanisms for alleviating microtrenching. To increase the radius of gyration of the bottommore » corners, they introduced a second etch step with Cl{sub 2}/O{sub 2} plasma. Fabricating simple metal-oxide-semiconductor capacitors on the two-step etched surface, the authors found that the electrical characteristics of the etched sample were nearly the same as the nonetched sample.« less

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

NASA Astrophysics Data System (ADS)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Electron beam induced etching of carbon nanotubes enhanced by secondary electrons in oxygen.

PubMed

Yoshida, Hideto; Tomita, Yuto; Soma, Kentaro; Takeda, Seiji

2017-05-12

Multi-walled carbon nanotubes (CNTs) are subjected to electron-beam-induced etching (EBIE) in oxygen. The EBIE process is observed in situ by environmental transmission electron microscopy. The partial pressure of oxygen (10 and 100 Pa), energy of the primary electrons (80 and 200 keV), and environment of the CNTs (suspended or supported on a silicon nitride membrane) are investigated as factors affecting the etching rate. The EBIE rate of CNTs was markedly promoted by the effects of secondary electrons that were emitted from a silicon nitride membrane under irradiation by primary electrons. Membrane supported CNTs can be cut by EBIE with a spatial accuracy better than 3 nm, and a nanogap of 2 nm can be successfully achieved between the ends of two suspended CNTs.

Rubber friction directional asymmetry

NASA Astrophysics Data System (ADS)

Tiwari, A.; Dorogin, L.; Steenwyk, B.; Warhadpande, A.; Motamedi, M.; Fortunato, G.; Ciaravola, V.; Persson, B. N. J.

2016-12-01

In rubber friction studies it is usually assumed that the friction force does not depend on the sliding direction, unless the substrate has anisotropic properties, like a steel surface grinded in one direction. Here we will present experimental results for rubber friction, where we observe a strong asymmetry between forward and backward sliding, where forward and backward refer to the run-in direction of the rubber block. The observed effect could be very important in tire applications, where directional properties of the rubber friction could be induced during braking.

Improvement in etching rate for epilayer lift-off with surfactant

NASA Astrophysics Data System (ADS)

Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

2013-03-01

In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Self-etching aspects of a three-step etch-and-rinse adhesive.

PubMed

Bahillo, Jose; Roig, Miguel; Bortolotto, Tissiana; Krejci, Ivo

2013-11-01

The purpose of this study is to assess the marginal adaptation of cavities restored with a three-step etch-and-rinse adhesive, OptiBond FL (OFL) under different application protocols. Twenty-four class V cavities were prepared with half of the margins located in enamel and half in dentin. Cavities were restored with OFL and a microhybrid resin composite (Clearfil AP-X). Three groups (n = 8) that differed in the etching technique were tested with thermomechanical loading, and specimens were subjected to quantitative marginal analysis before and after loading. Micromorphology of etching patters on enamel and dentin were observed with SEM. Data was evaluated with Kruskal-Wallis and Bonferroni post hoc test. Significantly lower percent CM (46.9 ± 19.5) were found after loading on enamel in group 3 compared to group 1 (96.5 ± 5.1) and group 2 (93.1 ± 8.1). However, no significant differences (p = 0.30) were observed on dentin margins. Etching enamel with phosphoric acid but avoiding etching dentin before the application of OFL, optimal marginal adaptation could be obtained, evidencing a self-etching primer effect. A reliable adhesive interface was attained with the application of the three-step etch-and-rinse OFL adhesive with a selective enamel etching, representing an advantage on restoring deep cavities.

Exploration of suitable dry etch technologies for directed self-assembly

NASA Astrophysics Data System (ADS)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Tribological synthesis method for producing low-friction surface film coating

DOEpatents

Ajayi, Oyelayo O.; Lorenzo-Martin, Maria De La; Fenske, George R.

2016-10-25

An article of method of manufacture of a low friction tribological film on a substrate. The article includes a substrate of a steel or ceramic which has been tribologically processed with a lubricant containing selected additives and the additives, temperature, load and time of processing can be selectively controlled to bias formation of a film on the substrate where the film is an amorphous structure exhibiting highly advantageous low friction properties.

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stehle, Yijing Y.; Sang, Xiahan; Unocic, Raymond R.

Here, chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes inmore » hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.« less

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations

DOE PAGES

Stehle, Yijing Y.; Sang, Xiahan; Unocic, Raymond R.; ...

2017-11-14

Here, chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes inmore » hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.« less

Silicon cells made by self-aligned selective-emitter plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.; Zaidi, Saleem H.

2000-01-01

Photovoltaic cells and methods for making them are disclosed wherein the metallized grids of the cells are used to mask portions of cell emitter regions to allow selective etching of phosphorus-doped emitter regions. The preferred etchant is SF.sub.6 or a combination of SF.sub.6 and O.sub.2. This self-aligned selective etching allows for enhanced blue response (versus cells with uniform heavy doping of the emitter) while preserving heavier doping in the region beneath the gridlines needed for low contact resistance. Embodiments are disclosed for making cells with or without textured surfaces. Optional steps include plasma hydrogenation and PECVD nitride deposition, each of which are suited to customized applications for requirements of given cells to be manufactured. The techniques disclosed could replace expensive and difficult alignment methodologies used to obtain selectively etched emitters, and they may be easily integrated with existing plasma processing methods and techniques of the invention may be accomplished in a single plasma-processing chamber.

Etch pit investigation of free electron concentration controlled 4H-SiC

NASA Astrophysics Data System (ADS)

Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

2013-04-01

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips

NASA Astrophysics Data System (ADS)

Pierron, Robin; Lecler, Sylvain; Zelgowski, Julien; Pfeiffer, Pierre; Mermet, Frédéric; Fontaine, Joël

2017-10-01

The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical fiber tip is studied. Etched marks with a diameter of 1 μm have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria of the fiber and its tip are discussed. We show that a 100/140 silica fiber is a good compromise which takes into account the injection, the working distance and the energy coupled in the higher-order modes. The energy balance is performed on the basis of the known ablation threshold of the material. Finally, the dependence between the etching depth and the number of pulses is studied. Saturation is observed probably due to a redeposition of the etched material, showing that a higher pulse energy is required for deeper etchings.

Laser etching of austenitic stainless steels for micro-structural evaluation

NASA Astrophysics Data System (ADS)

Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

2015-06-01

Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

NASA Astrophysics Data System (ADS)

Hallam, Brett; Wenham, Stuart; Lee, Haeseok; Lee, Eunjoo; Lee, Hyunwoo; Kim, Jisun; Shin, Jeongeun; Cho, Kyeongyeon; Kim, Jisoo

2012-10-01

In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90 Ω/square and subsequent etch back of the emitter to 120 Ω/square. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120 Ω/square. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

PubMed

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

2012-02-03

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Crystal structure of laser-induced subsurface modifications in Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.

2015-06-04

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wild, Larry

2003-01-01

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article, several experiments on RIE in BCl3 and Cl2 (and sometimes Ar) had demonstrated the 10:1 selectivity ratio, and further experiments to enhance understanding and obtain further guidance for optimizing process conditions were planned.

Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

DTIC Science & Technology

2014-03-27

scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE PAGES

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

2016-10-04

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

The description of friction of silicon MEMS with surface roughness: virtues and limitations of a stochastic Prandtl-Tomlinson model and the simulation of vibration-induced friction reduction.

PubMed

van Spengen, W Merlijn; Turq, Viviane; Frenken, Joost W M

2010-01-01

We have replaced the periodic Prandtl-Tomlinson model with an atomic-scale friction model with a random roughness term describing the surface roughness of micro-electromechanical systems (MEMS) devices with sliding surfaces. This new model is shown to exhibit the same features as previously reported experimental MEMS friction loop data. The correlation function of the surface roughness is shown to play a critical role in the modelling. It is experimentally obtained by probing the sidewall surfaces of a MEMS device flipped upright in on-chip hinges with an AFM (atomic force microscope). The addition of a modulation term to the model allows us to also simulate the effect of vibration-induced friction reduction (normal-force modulation), as a function of both vibration amplitude and frequency. The results obtained agree very well with measurement data reported previously.

Mode Specific Electronic Friction in Dissociative Chemisorption on Metal Surfaces: H2 on Ag(111)

NASA Astrophysics Data System (ADS)

Maurer, Reinhard J.; Jiang, Bin; Guo, Hua; Tully, John C.

2017-06-01

Electronic friction and the ensuing nonadiabatic energy loss play an important role in chemical reaction dynamics at metal surfaces. Using molecular dynamics with electronic friction evaluated on the fly from density functional theory, we find strong mode dependence and a dominance of nonadiabatic energy loss along the bond stretch coordinate for scattering and dissociative chemisorption of H2 on the Ag(111) surface. Exemplary trajectories with varying initial conditions indicate that this mode specificity translates into modulated energy loss during a dissociative chemisorption event. Despite minor nonadiabatic energy loss of about 5%, the directionality of friction forces induces dynamical steering that affects individual reaction outcomes, specifically for low-incidence energies and vibrationally excited molecules. Mode-specific friction induces enhanced loss of rovibrational rather than translational energy and will be most visible in its effect on final energy distributions in molecular scattering experiments.

Optimal filtering and Bayesian detection for friction-based diagnostics in machines.

PubMed

Ray, L R; Townsend, J R; Ramasubramanian, A

2001-01-01

Non-model-based diagnostic methods typically rely on measured signals that must be empirically related to process behavior or incipient faults. The difficulty in interpreting a signal that is indirectly related to the fundamental process behavior is significant. This paper presents an integrated non-model and model-based approach to detecting when process behavior varies from a proposed model. The method, which is based on nonlinear filtering combined with maximum likelihood hypothesis testing, is applicable to dynamic systems whose constitutive model is well known, and whose process inputs are poorly known. Here, the method is applied to friction estimation and diagnosis during motion control in a rotating machine. A nonlinear observer estimates friction torque in a machine from shaft angular position measurements and the known input voltage to the motor. The resulting friction torque estimate can be analyzed directly for statistical abnormalities, or it can be directly compared to friction torque outputs of an applicable friction process model in order to diagnose faults or model variations. Nonlinear estimation of friction torque provides a variable on which to apply diagnostic methods that is directly related to model variations or faults. The method is evaluated experimentally by its ability to detect normal load variations in a closed-loop controlled motor driven inertia with bearing friction and an artificially-induced external line contact. Results show an ability to detect statistically significant changes in friction characteristics induced by normal load variations over a wide range of underlying friction behaviors.

In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

NASA Astrophysics Data System (ADS)

Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

2014-07-01

Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

Metal-assisted chemical etch porous silicon formation method

DOEpatents

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Controlled core removal from a D-shaped optical fiber.

PubMed

Markos, Douglas J; Ipson, Benjamin L; Smith, Kevin H; Schultz, Stephen M; Selfridge, Richard H; Monte, Thomas D; Dyott, Richard B; Miller, Gregory

2003-12-20

The partial removal of a section of the core from a continuous D-shaped optical fiber is presented. In the core removal process, selective chemical etching is used with hydrofluoric (HF) acid. A 25% HF acid solution removes the cladding material above the core, and a 5% HF acid solution removes the core. A red laser with a wavelength of 670 nm is transmitted through the optical fiber during the etching. The power transmitted through the optical fiber is correlated to the etch depth by scanning electron microscope imaging. The developed process provides a repeatable method to produce an optical fiber with a specific etch depth.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik, E-mail: dmetzler@umd.edu; Uppireddi, Kishore; Bruce, Robert L.

2016-01-15

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

NASA Astrophysics Data System (ADS)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE PAGES

Metzler, Dominik; Uppiredi, Kishore; Bruce, Robert L.; ...

2015-11-13

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

NASA Astrophysics Data System (ADS)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

The failure of poly (ether ether ketone) in high speed contacts

NASA Astrophysics Data System (ADS)

Briscoe, B. J.; Stuart, B. H.; Sebastian, S.; Tweedale, P. J.

1993-04-01

The paper describes an experimental study, with an associated analysis incorporating supplementary data, of the anti-boundary lubricating action of an alkane-aliphatic carboxylic acid lubricant system in a poly (ether ether ketone)-mild steel contact. The experiments involve progressively increasing the load in a contact formed between a polymer plate and a rotating steel shaft and estimating the frictional work dissipated. Scuffing is identified when a rapid increase in frictional work is noted at a characteristic normal load. It is shown that the additive induces premature scuffing. Subsidiary data is provided using Raman spectroscopy and hardness probes, and confirms that certain additives such as decanoic acid and dodecylamine will induce surface plasticization in poly (ether ether ketone). The trends in the frictional data have been interpreted using the adhesive model of friction in conjunction with temperature-dependent interfacial theology and bulk mechanical property data. It is proposed that the scuffing process is induced prematurely as a consequence of excessive additive-induced subsurface plasticization. Restricted surface plasticization in this system provides an enhanced self-lubricating capacity.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Auto-Adjustable Tool for Self-Reacting and Conventional Friction Stir Welding

NASA Technical Reports Server (NTRS)

Carter, Robert W. (Inventor)

2002-01-01

A friction stir welding dcvice that is configured to perform convention friction stir welding as well as self-reacting friction stir welding is described. A pin passes hrough an upper shoulder and can selectively attach 10 and detach from a lower shoulder in a preferred embodiment. A controller maintains thc discrete position of, and/or force applied by, the upper and lower shoulders during self-reacting friction stir welding, or maintains the pin at a desired depth and/or applied force during conventional friction stir welding.

O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

PubMed

Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

2017-05-16

Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O 2 plasma etching and antistatic gun treatment. O 2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O 2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O 2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O 2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O 2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Spin-on metal oxide materials with high etch selectivity and wet strippability

NASA Astrophysics Data System (ADS)

Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

2016-03-01

Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

EDITORIAL: The Fifth International Workshop on Physical Chemistry of Wet Etching of Semiconductors (PCWES 2006)

NASA Astrophysics Data System (ADS)

Seidel, Helmut

2007-04-01

The biannual Workshop on Physical Chemistry of Wet Etching of Semiconductors (PCWES) was held in Saarbrücken, Germany in June 2006 for the fifth time in its history. The event was initiated in 1998 by Miko Elwenspoek from Twente University. It is a dedicated workshop with a typical attendance of about 30 scientists with multidisciplinary backgrounds from all parts of the world working in the field. Starting off in Holten in The Netherlands in 1998, subsequent workshops have been held at Toulouse, France in 2000, Nara, Japan in 2002, and Montreal, Canada in 2004. The initial focus was upon anisotropic etching of silicon in alkaline solutions, including surface topology, modelling aspects and applications. This process has found a wide range of applications in microsystems technology (MST), i.e. in the fabrication of microelectromechanical systems (MEMS). Most prominently, it provides the technological basis for bulk micromachining. More recently, other semiconductors such as germanium, III-V compounds and, particularly, wide-bandgap materials have started to enter the field. Furthermore, electrochemical aspects have gained in importance and the formation of porous silicon has also become a considerable part of the programme. From the very beginning up to the present time there was and is a strong focus on illumination of the underlying mechanism of crystallographic anisotropy, as well as on the understanding of electrochemical and dopant-induced etch stop phenomena. The fifth workshop, presented in Saarbrücken, included a total of twenty four contributions, six of which were as posters. Five of these are included in this partial special issue of Journal of Micromechanics and Microengineering as full length papers after having undergone the standard review process. The selection of contributions starts with the first invited paper given by M Gosalvez et al, resulting from a collaboration between Nagoya University, Japan and Helsinki University of Technology, Finland. It provides an atomistic point of view on the etching of the principal crystal surfaces of silicon. The step flow process and step bunching are explained in considerable detail, as well as effects of metal impurities. Simulation aspects of this approach are discussed in the second paper, also headed by M Gosalvez. They are based on a kinetic Monte Carlo scheme. The third contribution, from Z-f Zhou et al from the Southeast University in Nanjing, China also focuses on simulation aspects of anisotropic silicon etching. It proposes a novel 3-D cellular automata approach which is capable of describing the behaviour of high index planes in an efficient way. By choosing a dynamic algorithm, the programme gains speed and uses memory efficiently. The focus of the final two papers is on photoelectrochemical aspects of etching. D H van Dorp and J J Kelly from the University of Utrecht, The Netherlands describe the photoelectrochemistry and the etching behaviour of SiC in KOH. Silicon carbide is particularly attractive for harsh environment applications, due to its high chemical inertness. Therefore it is very difficult to etch purely chemically and can only be attacked by a light-induced process. Finally, F Yang et al from the Hahn-Meitner-Institut and ISAS Institute in Berlin, Germany describe an experiment of anodic oxide formation and subsequent etch back on (111) silicon surfaces in a NH4F solution. By monitoring the photoluminescence intensity and the photovoltage amplitude, effects of interface recombination and surface charging can be observed and characterized at the different steps of preparation. In total, the five papers provide a very fine overview of current activities and areas of interest in the field of wet chemical etching of semiconductors. The next PCWES workshop will be held in Asia in 2008.

Elastic wave induced by friction as a signature of human skin ageing and gender effect.

PubMed

Djaghloul, M; Morizot, F; Zahouani, H

2016-08-01

In this work, we propose an innovative approach based on a rotary tribometer coupled with laser velocimetry for measuring the elastic wave propagation on the skin. The method is based on a dynamic contact with the control of the normal force (Fn ), the contact length and speed. During the test a quantification of the friction force is produced. The elastic wave generated by friction is measured at the surface of the skin 35 mm from the source of friction exciter. In order to quantify the spectral range and the energy property of the wave generated, we have used laser velocimetry whose spot laser diameter is 120 μm, which samples the elastic wave propagation at a frequency which may reach 100 kHz. In this configuration, the speaker is the friction exciter and the listener the laser velocimetry. In order to perform non-invasive friction tests, the normal stress has been set to 0.3 N and the rotary velocity to 3 revolutions per second, which involves a sliding velocity of 63 mm/s. This newly developed innovative tribometer has been used for the analysis of the elastic wave propagation induced by friction on human skin during chronological ageing and gender effect. Measurements in vivo have been made on 60 healthy men and women volunteers, aged from 25 to 70. The results concerning the energy of the elastic wave signature induced by friction show a clear difference between the younger and older groups in the range of a low band of frequencies (0-200 Hz). The gender effect was marked by a 20% decrease in the energy of elastic wave propagation in the female group. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

The alloying effect and AgCl-directing growth for synthesizing a trimetallic nanoring with improved SERS

NASA Astrophysics Data System (ADS)

Han, Shuhua; Zhou, Guangju; Fu, Yunzhi; Ma, Ying; Xu, Li; Zou, Chao; Chen, Wei; Yang, Yun; Huang, Shaoming

2015-12-01

We report the synthesis of high quality trimetallic Au/Ag/Pt nanorings (TAAPNs) by using Au/Ag alloy decahedra (AAAD) as templates. The alloying effect and AgCl-directing growth have been investigated in detail during the formation of TAAPN. It was found that the doping of Ag in AAAD changes the surrounding environment of Au atoms and decreases the oxidization reduction potential (ORP) of [AuCl2]-/Au because of the alloying effect, resulting in the dissolved O2 molecules that serve as an effective etchant for oxidizing Au to Au(i). Ascorbic acid (AA) and chloroplatinic acid (H2PtCl6) are weak acids which can accelerate the etching by increasing the concentration of H+. The AgCl selectively absorbs on {100} of the decahedra and induces the preferential deposition of H2PtCl6 here via their complexing interaction. AA reduces Pt(iv) and Ag(i) to atoms which grow on {100} facets. The formed Pt/Ag layer changes the etching direction from along [100] to [111] and generates the TAAPN. Besides, it has been noted that the TAAPNs exhibit good Surface Enhanced Raman Scattering (SERS) performance.We report the synthesis of high quality trimetallic Au/Ag/Pt nanorings (TAAPNs) by using Au/Ag alloy decahedra (AAAD) as templates. The alloying effect and AgCl-directing growth have been investigated in detail during the formation of TAAPN. It was found that the doping of Ag in AAAD changes the surrounding environment of Au atoms and decreases the oxidization reduction potential (ORP) of [AuCl2]-/Au because of the alloying effect, resulting in the dissolved O2 molecules that serve as an effective etchant for oxidizing Au to Au(i). Ascorbic acid (AA) and chloroplatinic acid (H2PtCl6) are weak acids which can accelerate the etching by increasing the concentration of H+. The AgCl selectively absorbs on {100} of the decahedra and induces the preferential deposition of H2PtCl6 here via their complexing interaction. AA reduces Pt(iv) and Ag(i) to atoms which grow on {100} facets. The formed Pt/Ag layer changes the etching direction from along [100] to [111] and generates the TAAPN. Besides, it has been noted that the TAAPNs exhibit good Surface Enhanced Raman Scattering (SERS) performance. Electronic supplementary information (ESI) available: The synthesis of pure Au decahedra, electrochemical measurements, other TEM images, HAADF images, EDS patterns, UV-vis spectra of products prepared under other conditions. See DOI: 10.1039/c5nr05531h

Method for forming suspended micromechanical structures

DOEpatents

Fleming, James G.

2000-01-01

A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

NASA Astrophysics Data System (ADS)

Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

2010-02-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Recovery of GaN surface after reactive ion etching

NASA Astrophysics Data System (ADS)

Fan, Qian; Chevtchenko, S.; Ni, Xianfeng; Cho, Sang-Jun; Morko, Hadis

2006-02-01

Surface properties of GaN subjected to reactive ion etching and the impact on device performance have been investigated by surface potential, optical and electrical measurements. Different etching conditions were studied and essentially high power levels and low chamber pressures resulted in higher etch rates accompanying with the roughening of the surface morphology. Surface potential for the as-grown c-plane GaN was found to be in the range of 0.5~0.7 V using Scanning Kevin Probe Microscopy. However, after reactive ion etching at a power level of 300 W, it decreased to 0.1~0.2 V. A nearly linear reduction was observed on c-plane GaN with increasing power. The nonpolar a-plane GaN samples also showed large surface band bending before and after etching. Additionally, the intensity of the near band-edge photoluminescence decreased and the free carrier density increased after etching. These results suggest that the changes in the surface potential may originate from the formation of possible nitrogen vacancies and other surface oriented defects and adsorbates. To recover the etched surface, N II plasma, rapid thermal annealing, and etching in wet KOH were performed. For each of these methods, the surface potential was found to increase by 0.1~0.3 V, also the reverse leakage current in Schottky diodes fabricated on treated samples was reduced considerably compared with as-etched samples, which implies a partial-to-complete recovery from the plasma-induced damage.

WSi2/Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

NASA Astrophysics Data System (ADS)

Bouet, N.; Conley, R.; Biancarosa, J.; Divan, R.; Macrander, A. T.

2010-09-01

Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity. A multilayer Laue lens4 is an x-ray focusing optic, which is produced by depositing many layers of two materials with differing electron density in a particular stacking sequence where the each layer in the stack satisfies the Fresnel zone plate law. When this stack is sectioned to allow side-illumination with radiation, the diffracted exiting radiation will constructively interfere at the focal point. Since the first MLLs were developed at Argonne in the USA in 20064, there have been published reports of MLL development efforts in Japan5, and, very recently, also in Germany6. The traditional technique for sectioning multilayer Laue lens (MLL) involves mechanical sectioning and polishing7, which is labor intensive and can induce delamination or structure damage and thereby reduce yield. If a non-mechanical technique can be used to section MLL, it may be possible to greatly shorten the fabrication cycle, create more usable optics from the same amount of deposition substrate, and perhaps develop more advanced structures to provide greater stability or flexibility. Plasma etching of high aspect-ratio multilayer structures will also expand the scope for other types of optics fabrication (such as gratings, zone plates, and so-on). However, well-performing reactive ion etching recipes have been developed for only a small number of materials, and even less recipes exist for concurrent etching of more than one element so a fully material specific process needs to be developed. In this paper, sectioning of WSi2/Si multilayers for MLL fabrication using fluorinated gases is investigated. The main goals were to demonstrate the feasibility of this technique, achievement of high anisotropy, adequate sidewall roughness control and high etching rates. We note that this development for MLL sidewalls should be distinguished from work on improving aspect ratios in traditional Fresnel zone plates. Aspect ratios for MLL sidewalls are not similarly constrained.

Does active application of universal adhesives to enamel in self-etch mode improve their performance?

PubMed

Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

2015-09-01

To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (p<0.001). A deeper enamel-etching pattern was observed for all universal adhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

Effects of a non-rinse conditioner on the enamel of primary teeth.

PubMed

Fava, Marcelo; Myaki, Silvio Issáo; Arana-Chavez, Victor Elias; Fava-de-Moraes, Flavio

2003-01-01

The aim of this in vitro study was to evaluate by scanning electron microscopy the morphological aspects of the enamel of primary teeth after etching with 36% phosphoric acid or a non-rinse conditioner. Ten naturally exfoliated anterior primary teeth were selected. The samples were subjected to prophylaxis with pumice paste and water using a low-speed hand piece. Etching was done on the buccal surface. Specimens were divided into 2 groups: G1 (n=10): etching with 36% phosphoric acid gel - Conditioner 36 (Dentsply) for 20 s, followed by water rinse for 15 s; G2 (n=10): etching with NRC - Non Rinse Conditioner (Dentsply) for 20 s, followed by air drying for 15 s. The samples were dehydrated, mounted on metal stubs, coated with gold and observed with Jeol JSM-6100 scanning electron microscope. Electron-micrographic analysis showed that both etching agents were effective for etching the enamel of primary teeth causing the formation of microporosities on the enamel surface, although the etching pattern was more effective with the use of 36% phosphoric acid gel.

Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Desmoulin, Jean-Charles; Petit, Yannick; Cardinal, Thierry, E-mail: thierry.cardinal@icmcb.cnrs.fr

2015-12-07

Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to themore » formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.« less

Integrated manufacturing flow for selective-etching SADP/SAQP

NASA Astrophysics Data System (ADS)

Ali, Rehab Kotb; Fatehy, Ahmed Hamed; Word, James

2018-03-01

Printing cut mask in SAMP (Self Aligned Multi Patterning) is very challenging at advanced nodes. One of the proposed solutions is to print the cut shapes selectively. Which means the design is decomposed into mandrel tracks, Mandrel cuts and non-Mandrel cuts. The mandrel and non-Mandrel cuts are mutually independent which results in relaxing spacing constrains and as a consequence more dense metal lines. In this paper, we proposed the manufacturing flow of selective etching process. The results are quantified in terms of measuring PVBand, EPE and the number of hard bridging and pinching across the layout.

Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

PubMed

Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

2016-06-01

A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

The Formation and Characterization of GaN Hexagonal Pyramids

NASA Astrophysics Data System (ADS)

Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

2013-05-01

GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

Load and Time Dependence of Interfacial Chemical Bond-Induced Friction at the Nanoscale.

PubMed

Tian, Kaiwen; Gosvami, Nitya N; Goldsby, David L; Liu, Yun; Szlufarska, Izabela; Carpick, Robert W

2017-02-17

Rate and state friction (RSF) laws are widely used empirical relationships that describe the macroscale frictional behavior of a broad range of materials, including rocks found in the seismogenic zone of Earth's crust. A fundamental aspect of the RSF laws is frictional "aging," where friction increases with the time of stationary contact due to asperity creep and/or interfacial strengthening. Recent atomic force microscope (AFM) experiments and simulations found that nanoscale silica contacts exhibit aging due to the progressive formation of interfacial chemical bonds. The role of normal load (and, thus, normal stress) on this interfacial chemical bond-induced (ICBI) friction is predicted to be significant but has not been examined experimentally. Here, we show using AFM that, for nanoscale ICBI friction of silica-silica interfaces, aging (the difference between the maximum static friction and the kinetic friction) increases approximately linearly with the product of the normal load and the log of the hold time. This behavior is attributed to the approximately linear dependence of the contact area on the load in the positive load regime before significant wear occurs, as inferred from sliding friction measurements. This implies that the average pressure, and thus the average bond formation rate, is load independent within the accessible load range. We also consider a more accurate nonlinear model for the contact area, from which we extract the activation volume and the average stress-free energy barrier to the aging process. Our work provides an approach for studying the load and time dependence of contact aging at the nanoscale and further establishes RSF laws for nanoscale asperity contacts.

Load and Time Dependence of Interfacial Chemical Bond-Induced Friction at the Nanoscale

NASA Astrophysics Data System (ADS)

Tian, Kaiwen; Gosvami, Nitya N.; Goldsby, David L.; Liu, Yun; Szlufarska, Izabela; Carpick, Robert W.

2017-02-01

Rate and state friction (RSF) laws are widely used empirical relationships that describe the macroscale frictional behavior of a broad range of materials, including rocks found in the seismogenic zone of Earth's crust. A fundamental aspect of the RSF laws is frictional "aging," where friction increases with the time of stationary contact due to asperity creep and/or interfacial strengthening. Recent atomic force microscope (AFM) experiments and simulations found that nanoscale silica contacts exhibit aging due to the progressive formation of interfacial chemical bonds. The role of normal load (and, thus, normal stress) on this interfacial chemical bond-induced (ICBI) friction is predicted to be significant but has not been examined experimentally. Here, we show using AFM that, for nanoscale ICBI friction of silica-silica interfaces, aging (the difference between the maximum static friction and the kinetic friction) increases approximately linearly with the product of the normal load and the log of the hold time. This behavior is attributed to the approximately linear dependence of the contact area on the load in the positive load regime before significant wear occurs, as inferred from sliding friction measurements. This implies that the average pressure, and thus the average bond formation rate, is load independent within the accessible load range. We also consider a more accurate nonlinear model for the contact area, from which we extract the activation volume and the average stress-free energy barrier to the aging process. Our work provides an approach for studying the load and time dependence of contact aging at the nanoscale and further establishes RSF laws for nanoscale asperity contacts.

Source characterization and dynamic fault modeling of induced seismicity

NASA Astrophysics Data System (ADS)

Lui, S. K. Y.; Young, R. P.

2017-12-01

In recent years there are increasing concerns worldwide that industrial activities in the sub-surface can cause or trigger damaging earthquakes. In order to effectively mitigate the damaging effects of induced seismicity, the key is to better understand the source physics of induced earthquakes, which still remain elusive at present. Furthermore, an improved understanding of induced earthquake physics is pivotal to assess large-magnitude earthquake triggering. A better quantification of the possible causes of induced earthquakes can be achieved through numerical simulations. The fault model used in this study is governed by the empirically-derived rate-and-state friction laws, featuring a velocity-weakening (VW) patch embedded into a large velocity-strengthening (VS) region. Outside of that, the fault is slipping at the background loading rate. The model is fully dynamic, with all wave effects resolved, and is able to resolve spontaneous long-term slip history on a fault segment at all stages of seismic cycles. An earlier study using this model has established that aseismic slip plays a major role in the triggering of small repeating earthquakes. This study presents a series of cases with earthquakes occurring on faults with different fault frictional properties and fluid-induced stress perturbations. The effects to both the overall seismicity rate and fault slip behavior are investigated, and the causal relationship between the pre-slip pattern prior to the event and the induced source characteristics is discussed. Based on simulation results, the subsequent step is to select specific cases for laboratory experiments which allow well controlled variables and fault parameters. Ultimately, the aim is to provide better constraints on important parameters for induced earthquakes based on numerical modeling and laboratory data, and hence to contribute to a physics-based induced earthquake hazard assessment.

Scaling of titanium implants entrains inflammation-induced osteolysis

PubMed Central

Eger, Michal; Sterer, Nir; Liron, Tamar; Kohavi, David; Gabet, Yankel

2017-01-01

With millions of new dental and orthopedic implants inserted annually, periprosthetic osteolysis becomes a major concern. In dentistry, peri-implantitis management includes cleaning using ultrasonic scaling. We examined whether ultrasonic scaling releases titanium particles and induces inflammation and osteolysis. Titanium discs with machined, sandblasted/acid-etched and sandblasted surfaces were subjected to ultrasonic scaling and we physically and chemically characterized the released particles. These particles induced a severe inflammatory response in macrophages and stimulated osteoclastogenesis. The number of released particles and their chemical composition and nanotopography had a significant effect on the inflammatory response. Sandblasted surfaces released the highest number of particles with the greatest nanoroughness properties. Particles from sandblasted/acid-etched discs induced a milder inflammatory response than those from sandblasted discs but a stronger inflammatory response than those from machined discs. Titanium particles were then embedded in fibrin membranes placed on mouse calvariae for 5 weeks. Using micro-CT, we observed that particles from sandblasted discs induced more osteolysis than those from sandblasted/acid-etched discs. In summary, ultrasonic scaling of titanium implants releases particles in a surface type-dependent manner and may aggravate peri-implantitis. Future studies should assess whether surface roughening affects the extent of released wear particles and aseptic loosening of orthopedic implants. PMID:28059080

[INVITED] On the mechanisms of single-pulse laser-induced backside wet etching

NASA Astrophysics Data System (ADS)

Tsvetkov, M. Yu.; Yusupov, V. I.; Minaev, N. V.; Akovantseva, A. A.; Timashev, P. S.; Golant, K. M.; Chichkov, B. N.; Bagratashvili, V. N.

2017-02-01

Laser-induced backside wet etching (LIBWE) of a silicate glass surface at interface with a strongly absorbing aqueous dye solution is studied. The process of crater formation and the generated optoacoustic signals under the action of single 5 ns laser pulses at the wavelength of 527 nm are investigated. The single-pulse mode is used to avoid effects of incubation and saturation of the etched depth. Significant differences in the mechanisms of crater formation in the ;soft; mode of laser action (at laser fluencies smaller than 150-170 J/cm2) and in the ;hard; mode (at higher laser fluencies) are observed. In the ;soft; single-pulse mode, LIBWE produces accurate craters with the depth of several hundred nanometers, good shape reproducibility and smooth walls. Estimates of temperature and pressure of the dye solution heated by a single laser pulse indicate that these parameters can significantly exceed the corresponding critical values for water. We consider that chemical etching of glass surface (or molten glass) by supercritical water, produced by laser heating of the aqueous dye solution, is the dominant mechanism responsible for the formation of crater in the ;soft; mode. In the ;hard; mode, the produced craters have ragged shape and poor pulse-to-pulse reproducibility. Outside the laser exposed area, cracks and splits are formed, which provide evidence for the shock induced glass fracture. By measuring the amplitude and spectrum of the generated optoacoustic signals it is possible to conclude that in the ;hard; mode of laser action, intense hydrodynamic processes induced by the formation and cavitation collapse of vapor-gas bubbles at solid-liquid interface are leading to the mechanical fracture of glass. The LIBWE material processing in the ;soft; mode, based on chemical etching in supercritical fluids (in particular, supercritical water) is very promising for structuring of optical materials.

Deterministic Nanopatterning of Diamond Using Electron Beams.

PubMed

Bishop, James; Fronzi, Marco; Elbadawi, Christopher; Nikam, Vikram; Pritchard, Joshua; Fröch, Johannes E; Duong, Ngoc My Hanh; Ford, Michael J; Aharonovich, Igor; Lobo, Charlene J; Toth, Milos

2018-03-27

Diamond is an ideal material for a broad range of current and emerging applications in tribology, quantum photonics, high-power electronics, and sensing. However, top-down processing is very challenging due to its extreme chemical and physical properties. Gas-mediated electron beam-induced etching (EBIE) has recently emerged as a minimally invasive, facile means to dry etch and pattern diamond at the nanoscale using oxidizing precursor gases such as O 2 and H 2 O. Here we explain the roles of oxygen and hydrogen in the etch process and show that oxygen gives rise to rapid, isotropic etching, while the addition of hydrogen gives rise to anisotropic etching and the formation of topographic surface patterns. We identify the etch reaction pathways and show that the anisotropy is caused by preferential passivation of specific crystal planes. The anisotropy can be controlled by the partial pressure of hydrogen and by using a remote RF plasma source to radicalize the precursor gas. It can be used to manipulate the geometries of topographic surface patterns as well as nano- and microstructures fabricated by EBIE. Our findings constitute a comprehensive explanation of the anisotropic etch process and advance present understanding of electron-surface interactions.

Reduced Noise UV Enhancement of Etch Rates for Nuclear Tracks in CR-39

NASA Astrophysics Data System (ADS)

Sheets, Rebecca; Clarkson, David; Ume, Rubab; Regan, Sean; Sangster, Craig; Padalino, Stephen; McLean, James

2016-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C for 6 hours, producing micron-scale signal pits at the nuclear track sites. Using CR-39 irradiated with 5.4 MeV alpha particles and 1.0 MeV protons, we show that exposing the CR-39 to high intensity UV light before etching, with wavelengths between 240 nm and 350 nm, speeds the etch process. Elevated temperatures during UV exposure amplifies this effect, with etch rates up to 50% greater than unprocessed conditions. CR-39 pieces exposed to UV light and heat can also exhibit heightened levels of etch-induced noise (surface features not caused by nuclear particles). By illuminating the CR-39 from the side opposite to the tracks, a similar level of etch enhancement was obtained with little to no noise. The effective wavelength range is reduced, due to strong attenuation of shorter wavelengths. Funded in part by a LLE contract through the DOE.

Microwave-induced electrostatic etching: generation of highly reactive magnesium for application in Grignard reagent formation.

PubMed

van de Kruijs, Bastiaan H P; Dressen, Mark H C L; Meuldijk, Jan; Vekemans, Jef A J M; Hulshof, Lumbertus A

2010-04-07

A detailed study regarding the influence of microwave irradiation on the formation of a series of Grignard reagents in terms of rates and selectivities has revealed that these heterogeneous reactions may display a beneficial microwave effect. The interaction between microwaves and magnesium turnings generates violent electrostatic discharges. These discharges on magnesium lead to melting of the magnesium surface, thus generating highly active magnesium particles. As compared to conventional operation the microwave-induced discharges on the magnesium surface lead to considerably shorter initiation times for the insertion of magnesium in selected substrates (i.e. halothiophenes, halopyridines, octyl halides, and halobenzenes). Thermographic imaging and surface characterization by scanning electron microscopy showed that neither selective heating nor a "specific" microwave effect was causing the reduction in initiation times. This novel and straightforward initiation method eliminates the use of toxic and environmentally adverse initiators. Thus, this initiation method limits the formation of by-products. We clearly demonstrated that microwave irradiation enables fast Grignard reagent formation. Therefore, microwave technology is promising for process intensification of Grignard based coupling reactions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Economou, Demetre J.

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods includemore » the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.« less

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vazehrad, S., E-mail: vazehrad@kth.se; Elfsberg, J., E-mail: jessica.elfsberg@scania.com; Diószegi, A., E-mail: attila.dioszegi@jth.hj.se

An investigation on silicon segregation of lamellar, compacted and nodular graphite iron was carried out by applying a selective, immersion color etching and a modified electron microprobe to study the microstructure. The color etched micrographs of the investigated cast irons by revealing the austenite phase have provided data about the chronology and mechanism of microstructure formation. Moreover, electron microprobe has provided two dimensional segregation maps of silicon. A good agreement was found between the segregation profile of silicon in the color etched microstructure and the silicon maps achieved by electron microprobe analysis. However, quantitative silicon investigation was found to bemore » more accurate than color etching results to study the size of the eutectic colonies. - Highlights: • Sensitivity of a color etchant to silicon segregation is quantitatively demonstrated. • Si segregation measurement by EMPA approved the results achieved by color etching. • Color etched micrographs provided data about solidification mechanism in cast irons. • Austenite grain boundaries were identified by measuring the local Si concentration.« less

Resistance of dichromated gelatin as photoresist

NASA Astrophysics Data System (ADS)

Lin, Pang; Yan, Yingbai; Jin, Guofan; Wu, Minxian

1999-09-01

Based on the photographic chemistry, chemically hardening method was selected to enhance the anti-etch capability of gelatin. With the consideration of hardener and permeating processing, formaldehyde is the most ideal option due to the smallest molecule size and covalent cross-link with gelatin. After hardened in formaldehyde, the resistance of the gelatin was obtained by etched in 1% HF solution. The result showed that anti-etch capability of the gelatin layer increased with tanning time, but the increasing rate reduced gradually and tended to saturation. Based on the experimental results, dissolving-flaking hypothesis for chemically hardening gelatin was presented. Sol-gel coatings were etched with 1% HF solution. Compared with the etching rate of gelatin layer, it showed that gelatin could be used as resist to fabricate optical elements in sol-gel coating. With the cleaving-etch method and hardening of dichromated gelatin (DCG), DCG was used as a photoresist for fabricating sol-gel optical elements. As an application, a sol-gel random phase plate was fabricated.

Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects

NASA Astrophysics Data System (ADS)

Kim, Myoung-Soo; Kim, Hyoung-Gi; Kim, Hyeong-Soo; Baik, Ki-Ho; Johnson, Donald W.; Cernigliaro, George J.; Minsek, David W.

1999-06-01

Thin film imaging processes such as top surface imaging (TSI) are candidates for sub-150 nm lithography using 193 nm lithography. Single component, non-chemically amplified, positive tone TSI photoresists based on phenolic polymers demonstrate good post-etch contrast, resolution, and minimal line edge roughness, in addition to being the most straightforward thin film imaging approach. In this approach, ArF laser exposure results directly in radiation- induced crosslinking of the phenolic polymer, followed by formation of a thin etch mask at the surface of the un- exposed regions by vapor-phase silylation, followed by reactive ion etching of the non-silylated regions. However, single component resists based on poly(para-hydroxystryene) (PHS), such as MicroChem's Nano MX-P7, suffer from slow photospeed as well as low silylation contrast which can cause reproducibility and line-edge-roughness problems. We report that selected aromatic substitution of the poly(para- hydroxystryene) polymer can increase the photospeed by up to a factor of four relative to un-substituted PHS. In this paper we report the synthesis and lithographic evaluations of four experimental TSI photoresists. MX-EX-1, MX-EX-2, MX- EX-3 and MX-EX-4 are non-chemically amplified resists based on aromatic substitutions of chloro- and hydroxymethyl- groups and PHS. We report optimized lithographic processing conditions, line edge roughness, silylation contrast, and compare the results to the parent PHS photoresist.

Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

NASA Astrophysics Data System (ADS)

Mailfert, Julien; Van de Kerkhove, Jeroen; De Bisschop, Peter; De Meyer, Kristin

2014-03-01

A Metal1-layer (M1) patterning study is conducted on 20nm node (N20) for random-logic applications. We quantified the printability performance on our test vehicle for N20, corresponding to Poly/M1 pitches of 90/64nm, and with a selected minimum M1 gap size of 70nm. The Metal1 layer is patterned with 193nm immersion lithography (193i) using Negative Tone Developer (NTD) resist, and a double-patterning Litho-Etch-Litho-Etch (LELE) process. Our study is based on Logic test blocks that we OPCed with a combination of calibrated models for litho and for etch. We report the Overlapping Process Window (OPW), based on a selection of test structures measured after-etch. We find that most of the OPW limiting structures are EOL (End-of-Line) configurations. Further analysis of these individual OPW limiters will reveal that they belong to different types, such as Resist 3D (R3D) and Mask 3D (M3D) sensitive structures, limiters related to OPC (Optical Proximity Corrections) options such as assist placement, or the choice of CD metrics and tolerances for calculation of the process windows itself. To guide this investigation, we will consider a `reference OPC' case to be compared with other solutions. In addition, rigorous simulations and OPC verifications will complete the after-etch measurements to help us to validate our experimental findings.

Selforganized Structure Formation in Organized Microstructuring by Laser-Jet Etching

NASA Astrophysics Data System (ADS)

Rabbow, T. J.; Plath, P. J.; Mora, A.; Haase, M.

Laser-jet induced wet etching of stainless steel in 5M H3PO4 has been investigated. By this method, it is possible to cut and microstructure metals and alloys that form passive layers in strong etchants. Due to the laser heating of the metal and the adjacent layers of the etchant, the passive layer is removed and an active dissolution of the base metal together with the formation of hydrogen is observed. The reactions are limited by the transport of fresh acid and the removal of dissolved metal. A jet of etchant reduces the transport limitations. For definite ranges of the laser power, the feed velocity and the etchant jet velocity, a regime of periodic structure formation of the kerf, often called ripples, has been found. The ripple length depends on all three parameters. The ripple formation can be brought into correlation with a periodic change of the intensity of the reflected light as well as oscillations of the potential workpiece. It could be shown that the periodic structure formation is connected to a spreading of an etching front from the laser activated area, that temporarily moves ahead to the laser. This leads to modulations of the interface for the laser absorption, which results, for example, in oscillations of the intensity of the reflected light. This means the laser induced etching reaction attracts a feedback based on the conditions of absorption for the laser. For those parameters of feed velocity, laser power and etchant jet velocity, without ripple formation the laser induced etching front is of a constant distance to the laser which results in steady conditions at the interface for the absorption of the laser.

Degradation of Multimode Adhesive System Bond Strength to Artificial Caries-Affected Dentin Due to Water Storage.

PubMed

Follak, A C; Miotti, L L; Lenzi, T L; Rocha, R O; Soares, F Z

The purpose of this study was to evaluate the influence of water storage on bond strength of multimode adhesive systems to artificially induced caries-affected dentin. One hundred twelve sound bovine incisors were randomly assigned to 16 groups (n=7) according to the dentin condition (sound; SND, artificially induced caries-affected dentin; CAD, cariogenic challenge by pH cycling for 14 days); the adhesive system (SU, Scotchbond Universal Adhesive; AB, All-Bond Universal; PB, Prime & Bond Elect; SB, Adper Single Bond 2; and CS, Clearfil SE Bond), and the etching strategy (etch-and-rinse and self-etch). All adhesive systems were applied under manufacturer's instructions to flat dentin surfaces, and a composite block was built up on each dentin surface. After 24 hours of water storage, the specimens were sectioned into stick-shaped specimens (0.8 mm 2 ) and submitted to a microtensile test immediately (24 hours) or after six months of water storage. Bond strength data (MPa) were analyzed using three-way repeated-measures analysis of variance and post hoc Tukey test (α=5%), considering each substrate separately (SND and CAD). The etching strategy did not influence the bond strength of multimode adhesives, irrespective of the dentin condition. Water storage only reduced significantly the bond strength to CAD. The degradation of bond strength due to water storage was more pronounced in CAD, regardless of the etching strategy.

Optically Defined Multifunctional Patterning of Photosensitive Thin-Film Silica Mesophases

NASA Astrophysics Data System (ADS)

Doshi, Dhaval A.; Huesing, Nicola K.; Lu, Mengcheng; Fan, Hongyou; Lu, Yunfeng; Simmons-Potter, Kelly; Potter, B. G.; Hurd, Alan J.; Brinker, C. Jeffrey

2000-10-01

Photosensitive films incorporating molecular photoacid generators compartmentalized within a silica-surfactant mesophase were prepared by an evaporation-induced self-assembly process. Ultraviolet exposure promoted localized acid-catalyzed siloxane condensation, which can be used for selective etching of unexposed regions; for ``gray-scale'' patterning of refractive index, pore size, surface area, and wetting behavior; and for optically defining a mesophase transformation (from hexagonal to tetragonal) within the film. The ability to optically define and continuously control both structure and function on the macro- and mesoscales is of interest for sensor arrays, nanoreactors, photonic and fluidic devices, and low-dielectric-constant films.

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

Analytical correlation of centrifugal compressor design geometry for maximum efficiency with specific speed

NASA Technical Reports Server (NTRS)

Galvas, M. R.

1972-01-01

Centrifugal compressor performance was examined analytically to determine optimum geometry for various applications as characterized by specific speed. Seven specific losses were calculated for various combinations of inlet tip-exit diameter ratio, inlet hub-tip diameter ratio, blade exit backsweep, and inlet-tip absolute tangential velocity for solid body prewhirl. The losses considered were inlet guide vane loss, blade loading loss, skin friction loss, recirculation loss, disk friction loss, vaneless diffuser loss, and vaned diffuser loss. Maximum total efficiencies ranged from 0.497 to 0.868 for a specific speed range of 0.257 to 1.346. Curves of rotor exit absolute flow angle, inlet tip-exit diameter ratio, inlet hub-tip diameter ratio, head coefficient and blade exit backsweep are presented over a range of specific speeds for various inducer tip speeds to permit rapid selection of optimum compressor size and shape for a variety of applications.

Methods for improving the damage performance of fused silica polished by magnetorheological finishing

DOE PAGES

Kafka, Kyle R. P.; Hoffman, Brittany N.; Papernov, Semyon; ...

2017-12-11

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Lastly, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of ~3, while maintaining <1-nm surface roughness.

Methods for improving the damage performance of fused silica polished by magnetorheological finishing

NASA Astrophysics Data System (ADS)

Kafka, K. R. P.; Hoffman, B.; Papernov, S.; DeMarco, M. A.; Hall, C.; Marshall, K. L.; Demos, S. G.

2017-12-01

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Finally, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of 3, while maintaining <1-nm surface roughness.

Friction-induced skin injuries-are they pressure ulcers? An updated NPUAP white paper.

PubMed

Brienza, David; Antokal, Steven; Herbe, Laura; Logan, Susan; Maguire, Jeanine; Van Ranst, Jennifer; Siddiqui, Aamir

2015-01-01

Friction injuries are often misdiagnosed as pressure ulcers. The reason for the misdiagnosis may be a misinterpretation of classic pressure ulcer literature that reported friction increased the susceptibility of the skin to pressure damage. This analysis assesses the classic literature that led to the inclusion of friction as a causative factor in the development of pressure ulcers in light of more recent research on the effects of shear. The analysis in this article suggests that friction can contribute to pressure ulcers by creating shear strain in deeper tissues, but friction does not appear to contribute to pressure ulcers in the superficial layers of the skin. Injuries to the superficial layers of the skin caused by friction are not pressure ulcers and should not be classified or treated as such.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

NASA Astrophysics Data System (ADS)

Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

2012-08-01

We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

Fabrication and analysis of single-crystal KTiOPO₄ films with thicknesses in the micrometer range.

PubMed

Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

2016-02-01

Single-crystal potassium titanyl phosphate (KTiOPO4, KTP) films with thicknesses less than 5 μm are obtained by using helium (He) implantation combined with ion-beam-enhanced etching. A heavily damaged layer created by a 4×10(16)  cm(-2) fluence of 2 MeV He implantation is removed by means of wet chemical etching in hydrofluoric acid (HF). Thus, free-standing films of KTP with thicknesses in the range of 3-5 μm are obtained. The etching rate can be adjusted over a wide range by choosing temperature and HF concentration, as well as annealing conditions. Sharp etching edges and the smooth surface of the film indicate that a high selective-etching rate is achieved in the damaged layer, and the remaining part of the crystal is undamaged. X-ray and Raman-scattering results prove that KTP films have good single-crystal properties.

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

PubMed Central

Schiavone, Giuseppe; Murray, Jeremy; Perry, Richard; Mount, Andrew R.; Desmulliez, Marc P. Y.; Walton, Anthony J.

2017-01-01

This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS. PMID:28772683

METHOD OF APPLYING NICKEL COATINGS ON URANIUM

DOEpatents

Gray, A.G.

1959-07-14

A method is presented for protectively coating uranium which comprises etching the uranium in an aqueous etching solution containing chloride ions, electroplating a coating of nickel on the etched uranium and heating the nickel plated uranium by immersion thereof in a molten bath composed of a material selected from the group consisting of sodium chloride, potassium chloride, lithium chloride, and mixtures thereof, maintained at a temperature of between 700 and 800 deg C, for a time sufficient to alloy the nickel and uranium and form an integral protective coating of corrosion-resistant uranium-nickel alloy.

Atomistic simulations of graphite etching at realistic time scales.

PubMed

Aussems, D U B; Bal, K M; Morgan, T W; van de Sanden, M C M; Neyts, E C

2017-10-01

Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼10 20 m -2 s -1 . The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

Effect of reducing acid etching time on bond strength to noncarious and caries-affected primary and permanent dentin.

PubMed

Scheffel, Débora Lopes Salles; Ricci, Hérica Adad; de Souza Costa, Carlos Alberto; Pashley, David Henry; Hebling, Josimeri

2013-01-01

The purpose was to evaluate the effect of acid etching time on the bond strength of a simplified etch-and-rinse adhesive system to noncarious and caries-affected dentin of primary and permanent teeth. Twenty-four extracted primary and permanent teeth were divided into three groups, according to the acid etching time. Four teeth from each group were exposed to a microbiological caries-inducing protocol. After caries removal, noncarious and caries-affected dentin surfaces were etched with 37 percent phosphoric acid for five, 10, or 15 seconds prior to the application of Prime & Bond NT adhesive. Crowns were restored with resin composite and prepared for microtensile testing. Data were submitted to Kruskal-Wallis and Mann-Whitney tests (α=0.05). Higher bond strengths were obtained for noncarious dentin vs. caries-affected dentin for both primary and permanent teeth. Reducing the acid etching time from 15 to five seconds did not affect the bond strength to caries-affected or noncarious dentin in primary teeth. For permanent teeth, lower bond strength values were observed when the noncarious dentin was etched for five seconds, while no difference was seen between 10 and 15 seconds. For Prime & Bond NT, the etching of dentin for five seconds could be recommended for primary teeth, while 10 seconds would be the minimum time for permanent teeth.

Study on the performance of 2.6 μm In0.83Ga0.17As detector with different etch gases

NASA Astrophysics Data System (ADS)

Li, Ping; Tang, Hengjing; Li, Tao; Li, Xue; Shao, Xiumei; Ma, Yingjie; Gong, Haimei

2017-09-01

In order to obtain a low-damage recipe in the ICP processing, ICP-induced damage using Cl2/CH4 etch gases in extended wavelength In0.83Ga0.17As detector materials was studied in this paper. The effect of ICP etching on In0.83Ga0.17As samples was characterized qualitatively by the photoluminescence (PL) technology. The etch damage of In0.83Ga0.17As samples was characterized quantitatively by the Transmission Line Model (TLM), current voltage (IV) measurement, signal and noise testing and the Fourier Transform Infrared Spectroscopy (FTIR) technologies. The results showed that the Cl2/CH4 etching processing could lead better detector performance than that Cl2/N2, such as a larger square resistance, a lower dark current, a lower noise voltage and a higher peak detectivity. The lower PL signal intensity and lower dark current could be attributed to the hydrogen decomposed by the CH4 etch gases in the plasma etching process. These hydrogen particles generated non-radiative recombination centers in inner materials to weaken the PL intensity and passivated dangling bond at the surface to reduce the dark current. The larger square resistance resulted from the lower etch damage. The lower dark current meant that the detectors have less dangling bonds and leakage channels.

Nanoscale mechanochemical wear of phosphate laser glass against a CeO2 particle in humid air

NASA Astrophysics Data System (ADS)

Yu, Jiaxin; He, Hongtu; Zhang, Yafeng; Hu, Hailong

2017-01-01

Using an atomic force microscope, the friction and wear of phosphate laser glass against a CeO2 particle were quantitatively studied both in humid air and in vacuum, to reveal the water molecules induced mechanochemical wear mechanism of phosphate laser glass. The friction coefficient of the glass/CeO2 pair in air was found to be 5-7 times higher than that in vacuum due to the formation of a capillary water bridge at the friction interface, with a contribution of the capillary-related friction to the total friction coefficient as high as 65-79%. The capillary water bridge further induced a serious material removal of glass and CeO2 particle surfaces, while supplying both a local liquid water environment to corrode the glass surface and a high shearing force to assist the stretching of the Cesbnd Osbnd P bond, accelerating the reaction between water and the glass/CeO2 pair. In vacuum, however, no discernable wear phenomena were observed, but the phase images captured by AFM tapping mode suggested the occurrence of potential strain hardening in the friction area of the glass surface.

Friction-induced nano-structural evolution of graphene as a lubrication additive

NASA Astrophysics Data System (ADS)

Zhao, Jun; Mao, Junyuan; Li, Yingru; He, Yongyong; Luo, Jianbin

2018-03-01

Graphene has attracted enormous attention in the field of lubrication based on its excellent physical and chemical properties. Although many studies have obtained thermally or chemically- exfoliated graphene and investigated their wide and important application, few studies have reported their physical nano-structural evolution under friction. In this study, we investigated the lubrication properties of graphene additives with different layer numbers and interlayer spacing by exfoliating. The additives with a higher degrees of exfoliation changed to ordering under friction, and had better lubrication properties, while that with a lower degrees exhibited obvious structural defects and high friction. Therefore, the original degrees of exfoliation plays a key role in the structural evolution of graphene and superior lubrication can be achieved through the physical nano-structure changing to ordering, even graphitization. Furthermore, the ordered tribofilm on the frictional interfaces was parallel to the sliding direction, meaning the highly exfoliated graphene indeed reaching slippage between its layers, which wasn't experimentally discovered in previous studies. This work provides a new understanding of the relationship between friction-induced nano-structural evolution and lubrication properties of graphene as a lubrication additive, and has great potential for the structural design of graphene as a lubrication additive.

Nanoporous polymeric nanofibers based on selectively etched PS-b-PDMS block copolymers.

PubMed

Demirel, Gokcen B; Buyukserin, Fatih; Morris, Michael A; Demirel, Gokhan

2012-01-01

One-dimensional nanoporous polymeric nanofibers have been fabricated within an anodic aluminum oxide (AAO) membrane by a facile approach based on selective etching of poly(dimethylsiloxane) (PDMS) domains in polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) block copolymers that had been formed within the AAO template. It was observed that prior to etching, the well-ordered PS-b-PDMS nanofibers are solid and do not have any porosity. The postetched PS nanofibers, on the other hand, had a highly porous structure having about 20-50 nm pore size. The nanoporous polymeric fibers were also employed as a drug carrier for the native, continuous, and pulsatile drug release using Rhodamine B (RB) as a model drug. These studies showed that enhanced drug release and tunable drug dosage can be achieved by using ultrasound irradiation. © 2011 American Chemical Society

Selective etchant for oxide sacrificial material in semiconductor device fabrication

DOEpatents

Clews, Peggy J.; Mani, Seethambal S.

2005-05-17

An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.

Impact of substrate etching on plasmonic elements and metamaterials: preventing red shift and improving refractive index sensitivity.

PubMed

Moritake, Yuto; Tanaka, Takuo

2018-02-05

We propose and demonstrate the elimination of substrate influence on plasmon resonance by using selective and isotropic etching of substrates. Preventing the red shift of the resonance due to substrates and improving refractive index sensitivity were experimentally demonstrated by using plasmonic nanostructures fabricated on silicon substrates. Applying substrate etching decreases the effective refractive index around the metal nanostructures, resulting in elimination of the red shift. Improvement of sensitivity to the refractive index environment was demonstrated by using plasmonic metamaterials with Fano resonance based on far field interference. Change in quality factors (Q-factors) of the Fano resonance by substrate etching was also investigated in detail. The presence of a closely positioned substrate distorts the electric field distribution and degrades the Q-factors. Substrate etching dramatically increased the refractive index sensitivity reaching to 1532 nm/RIU since the electric fields under the nanostructures became accessible through substrate etching. The FOM was improved compared to the case without the substrate etching. The method presented in this paper is applicable to a variety of plasmonic structures to eliminate the influence of substrates for realizing high performance plasmonic devices.

Vapor etching of nuclear tracks in dielectric materials

DOEpatents

Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

2000-01-01

A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

NASA Astrophysics Data System (ADS)

Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

2012-09-01

As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

Optimization of surface morphology and scattering properties of TCO/AIT textured glass front electrode for thin film solar cells

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Fusco, L.; Antonaia, A.; Cominale, F.; Usatii, I.

2015-12-01

Aluminium induced texture (AIT) method has been used for obtaining highly textured glass substrate suitable for silicon based thin film solar cell technology. Wet etch step parameters of AIT process have been varied and effect of different etchants and different etching times on morphological and optical properties has been analyzed. The resulting morphology features (shape, size distribution, inclination angle) have been optimized in order to obtain the best scattering properties. ZnO:Ga (GZO) films have been deposited by sputtering technique on AIT-processed glass. Two different ZnO surface morphologies have been obtained, strongly depending on the underlying glass substrate morphology induced by different etching times. Very rough and porous texture (σrms ∼ 150 nm) was obtained on glass etched 2 min showing cauliflower-like structure, whereas a softer texture (σrms ∼ 78 nm) was obtained on glass etched 7 min giving wider and smoother U-shaped craters. The effect of different glass textures on optical confinement has been tested in amorphous silicon based p-i-n devices. Devices fabricated on GZO/high textured glass showed a quantum efficiency enhancement due to both an effective light trapping phenomenon and an effective anti-reflective optical behaviour. Short etching time produce smaller cavities (<1 μm) with deep U-shape characterized by high roughness, high inclination angle and low autocorrelation length. This surface morphology promoted a large light scattering phenomenon, as evidenced by haze value and by angular resolved scattering (ARS) behaviour, into a large range of diffraction angles, giving high probability of effective light trapping inside a PV device.

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Accelerating CR-39 Track Detector Processing by Utilizing UV

NASA Astrophysics Data System (ADS)

Sparling, Jonathan; Padalino, Stephen; McLean, James; Sangster, Craig; Regan, Sean

2017-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C, producing micron-scale signal pits at the nuclear track sites. It has been shown that illuminating CR-39 with UV light prior to etching increases bulk and track etch rates, especially when combined with elevated temperature. Spectroscopic analysis for amorphous solids has helped identify which UV wavelengths are most effective at enhancing etch rates. Absorption peaks found in the near infrared range provide for efficient sample heating, and may allow targeting cooperative IR-UV chemistry. Avoiding UV induced noise can be achieved through variations in absorption depths with wavelength. Vacuum drying and water absorption tests allow measurement of the resulting variation of bulk etch rate with depth. Funded in part by the NSF and an Department of Energy Grant through the Lab of Laser Energetics.

The impact of artificially caries-affected dentin on bond strength of multi-mode adhesives

PubMed Central

Follak, Andressa Cargnelutti; Miotti, Leonardo Lamberti; Lenzi, Tathiane Larissa; Rocha, Rachel de Oliveira; Maxnuck Soares, Fabio Zovico

2018-01-01

Aim: The aim of this study is to evaluate the impact of dentin condition on bond strength of multi-mode adhesive systems (MMAS) to sound and artificially induced caries-affected dentin (CAD). Methods: Flat dentin surfaces of 112 bovine incisors were assigned to 16 subgroups (n = 7) according to the substrate condition (sound and CAD– pH-cycling for 14 days); adhesive systems (Scotchbond Universal, All-Bond Universal, Prime and Bond Elect, Adper Single Bond Plus and Clearfil SE Bond) and etching strategy (etch-and-rinse and self-etch). All systems were applied according to the manufacturer's instructions, and resin composite restorations were built. After 24 h of water storage, specimens were sectioned (0.8 mm2) and submitted to the microtensile test. Statistical Analysis: Data (MPa) were analyzed using three-way analysis of variance and Tukey's test (α = 0.05). Results: MMAS presented similar bond strength values, regardless etching strategy in each substrate condition. Bond strength values were lower when MMAS were applied to CAD in the etch-and-rinse strategy. Conclusion: The etching strategy did not influence the bond strength of MMAS to sound or CAD, considering each substrate separately. However, CAD impact negatively on bond strength of MMAS in etch-and rinse mode. PMID:29674813

Tribomaterial factors in space mechanism brake performance

NASA Technical Reports Server (NTRS)

Hawthorne, H. M.

1990-01-01

The asbestos/phenolic pads of Shuttle Remote Manipulator System (SRMS) brakes are unsuitable for use in long life space mechanisms because their friction decreases on extended sliding in high vacuum. Dehydration of the material and accumulation of wear debris in the conforming interface of this tribosystem induces the permanent friction changes. Other polymer and some ceramic based materials exhibit similar frictional torque behavior due to the development of minimal contact patches by the interfacial debris. In contrast, high friction occurs when other ceramics form many small contacts throughout fine debris beds. Generating this latter interfacial structure during run-in ensures that the in-vacuo friction remains stable thereafter. Such materials with low wear rates are potential candidates for friction elements in SSRMS and similar mechanisms.

Ru nanoframes with an fcc structure and enhanced catalytic properties

DOE PAGES

Ye, Haihang; Wang, Qingxiao; Catalano, Massimo; ...

2016-03-21

Noble-metal nanoframes are of great interest to many applications due to their unique open structures. Among various noble metals, Ru has never been made into nanoframes. In this study, we report for the first time an effective method based on seeded growth and chemical etching for the facile synthesis of Ru nanoframes with high purity. The essence of this approach is to induce the preferential growth of Ru on the corners and edges of Pd truncated octahedra as the seeds by kinetic control. The resultant Pd–Ru core–frame octahedra could be easily converted to Ru octahedral nanoframes of ~2 nm inmore » thickness by selectively removing the Pd cores through chemical etching. Most importantly, in this approach the face-centered cubic (fcc) crystal structure of Pd seeds was faithfully replicated by Ru that usually takes an hcp structure. Furthermore, the fcc Ru nanoframes showed higher catalytic activities toward the reduction of p-nitrophenol by NaBH 4 and the dehydrogenation of ammonia borane compared with hcp Ru nanowires with roughly the same thickness.« less

Atomic precision etch using a low-electron temperature plasma

NASA Astrophysics Data System (ADS)

Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

2016-03-01

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection

NASA Astrophysics Data System (ADS)

Li, Hu; Karahashi, Kazuhiro; Friederich, Pascal; Fink, Karin; Fukasawa, Masanaga; Hirata, Akiko; Nagahata, Kazunori; Tatsumi, Tetsuya; Wenzel, Wolfgang; Hamaguchi, Satoshi

2018-06-01

It is known that the etching yield (i.e., sputtering yield) of tin-doped indium oxide (ITO) by hydrocarbon ions (CH x +) is higher than its corresponding physical sputtering yield [H. Li et al., J. Vac. Sci. Technol. A 33, 060606 (2015)]. In this study, the effects of hydrogen in the incident hydrocarbon ion beam on the etching yield of ITO have been examined experimentally and theoretically with the use of a mass-selected ion beam system and by first-principles quantum mechanical (QM) simulation. As in the case of ZnO [H. Li et al., J. Vac. Sci. Technol. A 35, 05C303 (2017)], mass-selected ion beam experiments have shown that the physical sputtering yield of ITO by chemically inert Ne ions increases after a pretreatment of the ITO film by energetic hydrogen ion injection. First-principles QM simulation of the interaction of In2O3 with hydrogen atoms shows that hydrogen atoms embedded in In2O3 readily form hydroxyl (OH) groups and weaken or break In–O bonds around the hydrogen atoms, making the In2O3 film less resistant to physical sputtering. This is consistent with experimental observation of the enhanced etching yields of ITO by CH x + ions, considering the fact that hydrogen atoms of the incident CH x + ions are embedded into ITO during the etching process.

Apparatus for mounting crystal

DOEpatents

Longeway, Paul A.

1985-01-01

A thickness monitor useful in deposition or etching reactor systems comprising a crystal-controlled oscillator in which the crystal is deposited or etched to change the frequency of the oscillator. The crystal rests within a thermally conductive metallic housing and arranged to be temperature controlled. Electrode contacts are made to the surface primarily by gravity force such that the crystal is substantially free of stress otherwise induced by high temperature.

Modeling of Instabilities and Self-organization at the Frictional Interface

NASA Astrophysics Data System (ADS)

Mortazavi, Vahid

The field of friction-induced self-organization and its practical importance remains unknown territory to many tribologists. Friction is usually thought of as irreversible dissipation of energy and deterioration; however, under certain conditions, friction can lead to the formation of new structures at the interface, including in-situ tribofilms and various patterns at the interface. This thesis studies self-organization and instabilities at the frictional interface, including the instability due to the temperature-dependency of the coefficient of friction, the transient process of frictional running-in, frictional Turing systems, the stick-and-slip phenomenon, and, finally, contact angle (CA) hysteresis as an example of solid-liquid friction and dissipation. All these problems are chosen to bridge the gap between fundamental interest in understanding the conditions leading to self-organization and practical motivation. We study the relationship between friction-induced instabilities and friction-induced self-organization. Friction is usually thought of as a stabilizing factor; however, sometimes it leads to the instability of sliding, in particular when friction is coupled with another process. Instabilities constitute the main mechanism for pattern formation. At first, a stationary structure loses its stability; after that, vibrations with increasing amplitude occur, leading to a limit cycle corresponding to a periodic pattern. The self-organization is usually beneficial for friction and wear reduction because the tribological systems tend to enter a state with the lowest energy dissipation. The introductory chapter starts with basic definitions related to self-organization, instabilities and friction, literature review, and objectives. We discuss fundamental concepts that provide a methodological tool to investigate, understand and enhance beneficial processes in tribosystems which might lead to self-organization. These processes could result in the ability of a frictional surface to exhibit "self-protection" and "self-healing" properties. Hence, this research is dealing with the fundamental concepts that allow the possibility of the development of a new generation of tribosystem and materials that reinforce such properties. In chapter 2, we investigate instabilities due to the temperature-dependency of the coefficient of friction. The temperature-dependency of the coefficient of friction can have a significant effect on the frictional sliding stability, by leading to the formation of "hot" and "cold" spots on the contacting surfaces. We formulate a stability criterion and perform a case study of a brake disk. In chapter 3, we study frictional running-in. Running-in is a transient period on the onset of the frictional sliding, in which friction and wear decrease to their stationary values. In this research, running-in is interpreted as friction-induced self-organization process. We introduce a theoretical model of running-in and investigate rough profile evolution assuming that its kinetics is driven by two opposite processes or events, i.e., smoothening which is typical for the deformation-driven friction and wear, and roughening which is typical for the adhesion-driven friction and wear. In chapter 4, we investigate the possibility of the so-called Turing-type pattern formation during friction. Turing or reaction-diffusion systems describe variations of spatial concentrations of chemical components with time due to local chemical reactions coupled with diffusion. During friction, the patterns can form at the sliding interface due to the mass transfer (diffusion), heat transfer, various tribochemical reactions, and wear. In chapter 5, we investigate how interfacial patterns including propagating trains of stick and slip zones form due to dynamic sliding instabilities. These can be categorized as self-organized patterns. We treat stick and slip as two phases at the interface, and study the effects related to phase transitions. Our results show how interfacial patterns form, how the transition between stick and slip zones occurs, and which parameters affect them. In chapter 6, we use Cellular Potts Model to study contact angle (CA) hysteresis as a measure of solid-liquid energy dissipation. We simulate CA hysteresis for a droplet over the tilted patterned surface, and a bubble placed under the surface immersed in liquid. We discuss the dependency of CA hysteresis on the surface structure and other parameters. This analysis allows decoupling of the 1D (pinning of the triple line) and 2D effects (adhesion hysteresis in the contact area) and obtain new insights on the nature of CA hysteresis. To summarize, we examine different cases in frictional interface and observe similar trends. We investigate and discus how these trends could be beneficial in design, synthesis and characterization of different materials and tribosystems. Furthermore, we describe how to utilize fundamental concepts for specific engineering applications. Finally, the main theme of this research is to find new applications of concept of self-organization to tribology and the role played by different physical and chemical interactions in modifying and controlling friction and wear. (Abstract shortened by UMI.)

Friction behavior of a microstructured polymer surface inspired by snake skin.

PubMed

Baum, Martina J; Heepe, Lars; Gorb, Stanislav N

2014-01-01

The aim of this study was to understand the influence of microstructures found on ventral scales of the biological model, Lampropeltis getula californiae, the California King Snake, on the friction behavior. For this purpose, we compared snake-inspired anisotropic microstructured surfaces to other microstructured surfaces with isotropic and anisotropic geometry. To exclude that the friction measurements were influenced by physico-chemical variations, all friction measurements were performed on the same epoxy polymer. For frictional measurements a microtribometer was used. Original data were processed by fast Fourier transformation (FFT) with a zero frequency related to the average friction and other peaks resulting from periodic stick-slip behavior. The data showed that the specific ventral surface ornamentation of snakes does not only reduce the frictional coefficient and generate anisotropic frictional properties, but also reduces stick-slip vibrations during sliding, which might be an adaptation to reduce wear. Based on this extensive comparative study of different microstructured polymer samples, it was experimentally demonstrated that the friction-induced stick-slip behavior does not solely depend on the frictional coefficient of the contact pair.

High quality InP-on-Si for solar cell applications

NASA Technical Reports Server (NTRS)

Shellenbarger, Zane A.; Goodwin, Thomas A.; Collins, Sandra R.; Dinetta, Louis C.

1994-01-01

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

The frictional response of patterned soft polymer surfaces

NASA Astrophysics Data System (ADS)

Rand, Charles J.

2008-10-01

Friction plays an intricate role in our everyday lives, it is therefore critical to understand the underlying features of friction to better help control and manipulate the response anywhere two surfaces in contact move past each other by a sliding motion. Here we present results targeting a thorough understanding of soft material friction and how it can be manipulated with patterns. We found that the naturally occurring length scale or periodicity (lambda) of frictionally induced patterns, Schallamach waves, could be described using two materials properties (critical energy release rate Gc and complex modulus (E*), i.e. lambdainfinity Gc /E*). Following this, we evaluated the effect of a single defect at a sliding interface. Sliding over a defect can be used to model the sliding from one feature to another in a patterned surface. Defects decreased the sliding frictional force by as much as 80% sliding and this decrease was attributed to changes in tangential stiffness of the sliding interface. The frictional response of surface wrinkles, where multiple edges or defects are acting in concert, was also evaluated. Wrinkles were shown to decrease friction (F) and changes in contact area (A) could not describe this decrease. A tangential stiffness correction factor (fx) and changes in the critical energy release rate were used to describe this deviation (F infinity Gc *A*fx/ℓ, where ℓ is a materials defined length scale of dissipation). This scaling can be used to describe the friction of any topographically patterned surface including the Gecko's foot, where the feature size is smaller than ℓ and thus replaces ℓ, increasing the friction compared to a flat surface. Also, mechanically-induced surface defects were used to align osmotically driven surface wrinkles by creating stress discontinuities that convert the global biaxial stress state to local uniaxial stresses. Defect spacing was used to control the alignment process at the surface of the wrinkled rigid film/soft elastomer interface. These aligned wrinkled surfaces can be used to tune the adhesion and friction of an interface. The work presented here gives insight into tuning the friction of a soft polymeric surface as well as understanding the friction of complex hierarchical structures.

X-ray photoelectron spectroscopic study of surface chemistry of dibenzyl-disulfide on steel under mild and severe wear conditions

NASA Technical Reports Server (NTRS)

Wheeler, D. R.

1977-01-01

Wear tests were performed on 304 stainless steel lubricated with pure mineral oil with and without dibenzyl-disulfide. Both mild and severe wear were observed. The type of wear was distinguished by a marked change in wear rate, friction coefficient, and wear scar appearance. The chemical composition of the wear scar surface was examined with X-ray photoelectron spectroscopy in conjunction with argon ion sputter etching. In severe wear scars, a sulfide was formed at the expense of the normal oxide layer. In mild wear scars, there were only superficial sulfur compounds, but there was a substantial increase in the oxide thickness.

Fabrication of the planar angular rotator using the CMOS process

NASA Astrophysics Data System (ADS)

Dai, Ching-Liang; Chang, Chien-Liu; Chen, Hung-Lin; Chang, Pei-Zen

2002-05-01

In this investigation we propose a novel planar angular rotator fabricated by the conventional complementary metal-oxide semiconductor (CMOS) process. Following the 0.6 μm single poly triple metal (SPTM) CMOS process, the device is completed by a simple maskless, post-process etching step. The rotor of the planar angular rotator rotates around its geometric center with electrostatic actuation. The proposed design adopts an intelligent mechanism including the slider-crank system to permit simultaneous motion. The CMOS planar angular rotator could be driven with driving voltages of around 40 V. The design proposed here has a shorter response time and longer life, without problems of friction and wear, compared to the more common planar angular micromotor.

Structure and optical properties of 2D layered MoS2 crystals implemented with novel friction induced crystal growth

NASA Astrophysics Data System (ADS)

Tanabe, Tadao; Ito, Takafumi; Oyama, Yutaka

2018-03-01

We used X-ray diffraction, and Raman and photoluminescence (PL) spectroscopies to examine the structure and optical properties of molybdenum disulfide (MoS2) crystals grown by friction at the interface between two materials. MoS2 is produced chemically from molybdenum dithiocarbamates (MoDTC) in synthetic oil under sliding friction conditions. The X-ray diffraction (XRD) patterns indicate that the structure of the MoS2 is layered with the c-axis perpendicular to the surface. The MoS2 layer was formed on stainless steel and germanium by friction at the interface between these materials and high carbon chromium bearing steel. The number of layers is estimated to be N (N > 6) from the distance between the Raman frequencies of the E12g and A1g modes. For MoS2 grown on stainless steel, exciton peak is observed in the PL spectrum at room temperature. These results show that this friction induced crystal growth method is viable for synthesizing atomic layers of MoS2 at solid surfaces.

Skin friction drag reduction on a flat plate turbulent boundary layer using synthetic jets

NASA Astrophysics Data System (ADS)

Belanger, Randy; Boom, Pieter D.; Hanson, Ronald E.; Lavoie, Philippe; Zingg, David W.

2017-11-01

In these studies, we investigate the effect of mild synthetic jet actuation on a flat plate turbulent boundary layer with the goal of interacting with the large scales in the log region of the boundary layer and manipulating the overall skin friction. Results will be presented from both large eddy simulations (LES) and wind tunnel experiments. In the experiments, a large parameter space of synthetic jet frequency and amplitude was studied with hot film sensors at select locations behind a pair of synthetic jets to identify the parameters that produce the greatest changes in the skin friction. The LES simulations were performed for a selected set of parameters and provide a more complete evaluation of the interaction between the boundary layer and synthetic jets. Five boundary layer thicknesses downstream, the skin friction between the actuators is generally found to increase, while regions of reduced skin friction persist downstream of the actuators. This pattern is reversed for forcing at low frequency. Overall, the spanwise-averaged skin friction is increased by the forcing, except when forcing at high frequency and low amplitude, for which a net skin friction reduction persists downstream. The physical interpretation of these results will be discussed. The financial support of Airbus is gratefully acknowledged.

Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

NASA Technical Reports Server (NTRS)

Banks, B. A. (Inventor)

1984-01-01

The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

Stiffness and frictional resistance of a superelastic nickel-titanium orthodontic wire with low-stress hysteresis.

PubMed

Liaw, Yu-Cheng; Su, Yu-Yu M; Lai, Yu-Lin; Lee, Shyh-Yuan

2007-05-01

Stress-induced martensite formation with stress hysteresis that changes the elasticity and stiffness of nickel-titanium (Ni-Ti) wire influences the sliding mechanics of archwire-guided tooth movement. This in-vitro study investigated the frictional behavior of an improved superelastic Ni-Ti wire with low-stress hysteresis. Improved superelastic Ni-Ti alloy wires (L & H Titan, Tomy International, Tokyo, Japan) with low-stress hysteresis were examined by using 3-point bending and frictional resistance tests with a universal test machine at a constant temperature of 35 degrees C, and compared with the former conventional austenitic-active superelastic Ni-Ti wires (Sentalloy, Tomy International). Wire stiffness levels were derived from differentiation of the polynomial regression of the unloading curves, and values for kinetic friction were measured at constant bending deflection distances of 0, 2, 3, and 4 mm, respectively. Compared with conventional Sentalloy wires, the L & H Titan wire had a narrower stress hysteresis including a lower loading plateau and a higher unloading plateau. In addition, L & H Titan wires were less stiff than the Sentalloy wires during most unloading stages. Values of friction measured at deflections of 0, 2, and 3 mm were significantly (P <.05) increased in both types of wire. However, they showed a significant decrease in friction from 3 to 4 mm of deflection. L & H Titan wires had less friction than Sentalloy wires at all bending deflections (P <.05). Stress-induced martensite formation significantly reduced the stiffness and thus could be beneficial to decrease the binding friction of superelastic Ni-Ti wires during sliding with large bending deflections. Austenitic-active alloy wires with low-stress hysteresis and lower stiffness and friction offer significant potential for further investigation.

Surface passivation of mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals by selective etching for improved stability.

PubMed

Jing, Qiang; Zhang, Mian; Huang, Xiang; Ren, Xiaoming; Wang, Peng; Lu, Zhenda

2017-06-08

In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(Br x I 1-x ) 3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.

Friction Compensation for Enhancing Transparency of a Teleoperator with Compliant Transmission

PubMed Central

Mahvash, Mohsen; Okamura, Allison

2009-01-01

This article presents a model-based compensator for canceling friction in the tendon-driven joints of a haptic-feedback teleoperator. Unlike position-tracking systems, a teleoperator involves an unknown environment force that prevents the use of tracking position error as a feedback to the compensator. Thus, we use a model-based feedforward friction compensator to cancel the friction forces. We provide conditions for selecting compensator parameters to ensure passivity of the teleoperator and demonstrate performance experimentally. PMID:20514151

Carbon Displacement-Induced Single Carbon Atomic Chain Formation and its Effects on Sliding of SiC Fibers in SiC/graphene/SiC Composite

DOE PAGES

Wallace, Joseph B.; Chen, Di; Shao, Lin

2015-11-03

Understanding radiation effects on the mechanical properties of SiC composites is important to their application in advanced reactor designs. By means of molecular dynamics simulations, we found that due to strong interface bonding between the graphene layers and SiC, the sliding friction of SiC fibers is largely determined by the frictional behavior between graphene layers. Upon sliding, carbon displacements between graphene layers can act as seed atoms to induce the formation of single carbon atomic chains (SCACs) by pulling carbon atoms from the neighboring graphene planes. The formation, growth, and breaking of SCACs determine the frictional response to irradiation.

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, VFG; Xie, HK

2014-07-01

This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficientsmore » of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.« less

Quantum friction in arbitrarily directed motion

DOE PAGES

Klatt, J.; Farías, M. Belen; Dalvit, D. A. R.; ...

2017-05-30

In quantum friction, the electromagnetic fluctuation-induced frictional force decelerating an atom which moves past a macroscopic dielectric body, has so far eluded experimental evidence despite more than three decades of theoretical studies. Inspired by the recent finding that dynamical corrections to such an atom's internal dynamics are enhanced by one order of magnitude for vertical motion—compared with the paradigmatic setup of parallel motion—here we generalize quantum friction calculations to arbitrary angles between the atom's direction of motion and the surface in front of which it moves. Motivated by the disagreement between quantum friction calculations based on Markovian quantum master equationsmore » and time-dependent perturbation theory, we carry out our derivations of the quantum frictional force for arbitrary angles by employing both methods and compare them.« less

The detrimental effect of friction on space microgravity robotics

NASA Technical Reports Server (NTRS)

Newman, Wyatt S.; Glosser, Gregory D.; Miller, Jeffrey H.; Rohn, Douglas

1992-01-01

The authors present an analysis of why control systems are ineffective in compensating for acceleration disturbances due to Coulomb friction. Linear arguments indicate that the effects of Coulomb friction on a body are most difficult to reject when the control actuator is separated from the body of compliance. The linear arguments were illustrated in a nonlinear simulation of optimal linear tracking control in the presence of nonlinear friction. The results of endpoint acceleration measurements for four robot designs are presented and are compared with simulation and to equivalent measurements on a human. It is concluded that Coulomb friction in common bearings and transmission induces unacceptable levels of endpoint acceleration, that these accelerations cannot be adequately attenuated by control, and that robots for microgravity work will require special design considerations for inherently low friction.

Solid friction between soft filaments.

PubMed

Ward, Andrew; Hilitski, Feodor; Schwenger, Walter; Welch, David; Lau, A W C; Vitelli, Vincenzo; Mahadevan, L; Dogic, Zvonimir

2015-06-01

Any macroscopic deformation of a filamentous bundle is necessarily accompanied by local sliding and/or stretching of the constituent filaments. Yet the nature of the sliding friction between two aligned filaments interacting through multiple contacts remains largely unexplored. Here, by directly measuring the sliding forces between two bundled F-actin filaments, we show that these frictional forces are unexpectedly large, scale logarithmically with sliding velocity as in solid-like friction, and exhibit complex dependence on the filaments' overlap length. We also show that a reduction of the frictional force by orders of magnitude, associated with a transition from solid-like friction to Stokes's drag, can be induced by coating F-actin with polymeric brushes. Furthermore, we observe similar transitions in filamentous microtubules and bacterial flagella. Our findings demonstrate how altering a filament's elasticity, structure and interactions can be used to engineer interfilament friction and thus tune the properties of fibrous composite materials.

Solid friction between soft filaments

NASA Astrophysics Data System (ADS)

Ward, Andrew; Hilitski, Feodor; Schwenger, Walter; Welch, David; Lau, A. W. C.; Vitelli, Vincenzo; Mahadevan, L.; Dogic, Zvonimir

2015-06-01

Any macroscopic deformation of a filamentous bundle is necessarily accompanied by local sliding and/or stretching of the constituent filaments. Yet the nature of the sliding friction between two aligned filaments interacting through multiple contacts remains largely unexplored. Here, by directly measuring the sliding forces between two bundled F-actin filaments, we show that these frictional forces are unexpectedly large, scale logarithmically with sliding velocity as in solid-like friction, and exhibit complex dependence on the filaments’ overlap length. We also show that a reduction of the frictional force by orders of magnitude, associated with a transition from solid-like friction to Stokes’s drag, can be induced by coating F-actin with polymeric brushes. Furthermore, we observe similar transitions in filamentous microtubules and bacterial flagella. Our findings demonstrate how altering a filament’s elasticity, structure and interactions can be used to engineer interfilament friction and thus tune the properties of fibrous composite materials.

Solid friction between soft filaments

DOE PAGES

Ward, Andrew; Hilitski, Feodor; Schwenger, Walter; ...

2015-03-02

Any macroscopic deformation of a filamentous bundle is necessarily accompanied by local sliding and/or stretching of the constituent filaments. Yet the nature of the sliding friction between two aligned filaments interacting through multiple contacts remains largely unexplored. Here, by directly measuring the sliding forces between two bundled F-actin filaments, we show that these frictional forces are unexpectedly large, scale logarithmically with sliding velocity as in solid-like friction, and exhibit complex dependence on the filaments’ overlap length. We also show that a reduction of the frictional force by orders of magnitude, associated with a transition from solid-like friction to Stokes’s drag,more » can be induced by coating F-actin with polymeric brushes. Furthermore, we observe similar transitions in filamentous microtubules and bacterial flagella. In conclusion, our findings demonstrate how altering a filament’s elasticity, structure and interactions can be used to engineer interfilament friction and thus tune the properties of fibrous composite materials.« less

In Situ Fabrication and Reactivation of Highly Selective and Stable Ag Catalysts for Electrochemical CO2 Conversion.

PubMed

Ma, Ming; Liu, Kai; Shen, Jie; Kas, Recep; Smith, Wilson A

2018-06-08

In this work, the highly selective and stable electrocatalytic reduction of CO 2 to CO on nanostructured Ag electrocatalysts is presented. The Ag electrocatalysts are synthesized by the electroreduction of Ag 2 CO 3 formed by in situ anodic-etching of Ag foil in a KHCO 3 electrolyte. After 3 min of this etching treatment, the Ag 2 CO 3 -derived nanostructured Ag electrocatalysts are capable of producing CO with up to 92% Faradaic efficiency at an overpotential as low as 290 mV, which surpasses all of the reported Ag catalysts at identical conditions to date. In addition, the anodic-etched Ag retained ∼90% catalytic selectivity in the electroreduction of CO 2 to CO for more than 100 h. The Ag 2 CO 3 -derived Ag is able to facilitate the activation of CO 2 via reduction of the activation energy barrier of the initial electron transfer and provide an increased number of active sites, resulting in the dramatically improved catalytic activity for the reduction of CO 2 to CO.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Influence of Laser Shock Texturing on W9 Steel Surface Friction Property

NASA Astrophysics Data System (ADS)

Fan, Yujie; Cui, Pengfei; Zhou, Jianzhong; Dai, Yibin; Guo, Erbin; Tang, Deye

2017-09-01

To improve surface friction property of high speed steel, micro-dent arrays on W9Mo3Cr4V surface were produced by laser shock processing. Friction test was conducted on smooth surface and texturing surface and effect of surface texturing density on friction property was studied. The results show that, under the same condition, friction coefficient of textured surface is lower than smooth surface with dent area density less than 6%, wear mass loss, width and depth of wear scar are smaller; Wear resistance of the surface is the best and the friction coefficient is the smallest when dent area density is 2.2%; Friction coefficient, wear mass loss, width and depth of wear scar increase correspondingly as density of dent area increases when dent area density is more than 2.2%. Abrasive wear and adhesive wear, oxidative wear appear in the wear process. Reasonable control of geometric parameters of surface texturing induced by laser shock processing is helpful to improve friction performance.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

A new universal simplified adhesive: 36-Month randomized double-blind clinical trial.

PubMed

Loguercio, Alessandro D; de Paula, Eloisa Andrade; Hass, Viviane; Luque-Martinez, Issis; Reis, Alessandra; Perdigão, Jorge

2015-09-01

It is still debatable which technique should be used with universal adhesives, either etch-and-rinse (wet or dry) or self-etch strategy (with or without selective enamel etching). To evaluate the 36-month clinical performance of Scotchbond Universal Adhesive (SU, 3M ESPE) in non-carious cervical lesions (NCCLs) using two evaluation criteria. Thirty-nine patients participated in this study. Two-hundred restorations were assigned to four groups: ERm: etch-and-rinse+moist dentin; ERd: etch-and-rinse+dry dentin; Set: selective enamel etching; and SE: self-etch. The same composite resin was inserted for all restorations in up to 3 increments. The restorations were evaluated at baseline and at 6-, 18-, and 36-months using both the FDI and the USPHS criteria. Statistical analyses were performed with Friedman repeated measures ANOVA by rank and McNemar test for significance in each pair (α=0.05). Eight restorations (ERm: 1; ERd: 1; Set: 1 and SE: 5) were lost after 36 months, but only significant for SE when compared with baseline (p=0.02 for either criteria). Marginal staining occurred in 6.8% of the restorations (groups ERm, ERd, and Set) and 17.5% of the restorations (group SE), with significant difference for each group when compared with baseline using the FDI criteria (p<0.04), while statistical significance was reached only for SE when compared with baseline using the USPHS criteria (p<0.03). Twenty-eight and 49 restorations were scored as bravo for marginal adaptation using the USPHS and FDI criteria, respectively, with significant difference for each group when compared with baseline (p<0.05). While there was no statistical difference among bonding strategies when a universal adhesive was used, there were signs of degradation when the universal adhesive was applied in SE mode. The FDI criteria remain more sensitive than the USPHS criteria, especially for the criteria marginal staining and marginal adaptation. Copyright © 2015 Elsevier Ltd. All rights reserved.

Spontaneous mode-selection in the self-propelled motion of a solid/liquid composite driven by interfacial instability

NASA Astrophysics Data System (ADS)

Takabatake, Fumi; Magome, Nobuyuki; Ichikawa, Masatoshi; Yoshikawa, Kenichi

2011-03-01

Spontaneous motion of a solid/liquid composite induced by a chemical Marangoni effect, where an oil droplet attached to a solid soap is placed on a water phase, was investigated. The composite exhibits various characteristic motions, such as revolution (orbital motion) and translational motion. The results showed that the mode of this spontaneous motion switches with a change in the size of the solid scrap. The essential features of this mode-switching were reproduced by ordinary differential equations by considering nonlinear friction with proper symmetry.

Locomotive and reptation motion induced by internal force and friction.

PubMed

Sakaguchi, Hidetsugu; Ishihara, Taisuke

2011-06-01

We propose a simple mechanical model of locomotion induced by internal force and friction. We first construct a system of two elements as an analog of the bipedal motion. The internal force does not induce a directional motion by itself because of the action-reaction law, but a directional motion becomes possible by the control of the frictional force. The efficiency of these model systems is studied using an analogy to the heat engine. As a modified version of the two-element model, we construct a model that exhibits a bipedal motion similar to kinesin's motion of molecular motor. Next, we propose a linear chain model and a ladder model as an extension of the original two-element model. We find a transition from a straight to a snake-like motion in a ladder model by changing the strength of the internal force.

Enamel resistance to demineralization following Er:YAG laser etching for bonding orthodontic brackets

PubMed Central

Ahrari, Farzaneh; Poosti, Maryam; Motahari, Pourya

2012-01-01

Background: Several studies have shown that laser-etching of enamel for bonding orthodontic brackets could be an appropriate alternative for acid conditioning, since a potential advantage of laser could or might be caries prevention. This study compared enamel resistance to demineralization following etching with acid phosphoric or Er:YAG laser for bonding orthodontic brackets. Materials and Methods: Fifty sound human premolars were divided into two equal groups. In the first group, enamel was etched with 37% phosphoric acid for 15 seconds. In the second group, Er:YAG laser (wavelength, 2 940 nm; 300 mJ/pulse, 10 pulses per second, 10 seconds) was used for tooth conditioning. The teeth were subjected to 4-day PH-cycling process to induce caries-like lesions. The teeth were then sectioned and the surface area of the lesion was calculated in each microphotographs and expressed in pixel. The total surface of each specimen was 196 608 pixels. Results: Mean lesion areas were 7 171 and 7532 pixels for Laser-etched and Acid-etched groups, respectively. The two sample t-test showed that there was no significant difference in lesion area between the two groups (P = 0.914). Conclusion: Although Er:YAG laser seems promising for etching enamel before bonding orthodontic brackets, it does not reduce enamel demineralization when exposed to acid challenge. PMID:23162591

Thermal etching of silver: Influence of rolling defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ollivier, M., E-mail: o.maelig@imperial.ac.uk

2016-08-15

Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolvedmore » oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.« less

Effects of Post-Weld Heat Treatment on the Mechanical Properties of Similar- and Dissimilar-Alloy Friction Stir Welded Blanks

NASA Astrophysics Data System (ADS)

Zadpoor, Amir Abbas; Sinke, Jos

2011-01-01

Friction stir welding is a solid state joining process with relatively low welding temperatures. Nevertheless, the mechanical properties of friction stir welded blanks are degraded after welding. Indeed, both strength and ductility of the welds are decreased after welding. Often, the resulting friction stir welded blanks need to be formed to their final structural shape. Therefore, the formability of friction stir welded blanks is of primary importance in the manufacturing of structural parts. This paper studies how the mechanical properties and particularly formability of friction stir welded blanks can be improved by applying a post weld heat treatment. Two aluminum alloys from 2000 and 7000 series, namely 2024-T3 and 7075-T6, are selected for the study. The sheet thickness of both materials is 2,0 mm. The selected alloys are welded in three configurations: 2024-T3 and 2024-T3, 7075-T6 and 7075-T6, and 2024-T3 and 7075-T6. The resulting welds are naturally aged for a few months. Three sets of standard dog bone shape tensile test specimens are then machined from the welds. The first set of the specimens is tested without any heat treatment. The second set of the specimens is solution heat treated and quenched before testing. The third set of the specimens is solution heat treated, quenched, and naturally aged for a week before testing. The mechanical properties of the three different sets of specimens are compared with each other. It is shown that careful selection of post weld heat-treatment can greatly improve the formability of friction stir welded blanks.

Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning

NASA Astrophysics Data System (ADS)

Raley, Angélique; Mohanty, Nihar; Sun, Xinghua; Farrell, Richard A.; Smith, Jeffrey T.; Ko, Akiteru; Metz, Andrew W.; Biolsi, Peter; Devilliers, Anton

2017-04-01

Multipatterning has enabled continued scaling of chip technology at the 28nm node and beyond. Selfaligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) as well as Litho- Etch/Litho-Etch (LELE) iterations are widely used in the semiconductor industry to enable patterning at sub 193 immersion lithography resolutions for layers such as FIN, Gate and critical Metal lines. Multipatterning requires the use of multiple masks which is costly and increases process complexity as well as edge placement error variation driven mostly by overlay. To mitigate the strict overlay requirements for advanced technology nodes (7nm and below), a self-aligned blocking integration is desirable. This integration trades off the overlay requirement for an etch selectivity requirement and enables the cut mask overlay tolerance to be relaxed from half pitch to three times half pitch. Selfalignement has become the latest trend to enable scaling and self-aligned integrations are being pursued and investigated for various critical layers such as contact, via, metal patterning. In this paper we propose and demonstrate a low cost flexible self-aligned blocking strategy for critical metal layer patterning for 7nm and beyond from mask assembly to low -K dielectric etch. The integration is based on a 40nm pitch SADP flow with 2 cut masks compatible with either cut or block integration and employs dielectric films widely used in the back end of the line. As a consequence this approach is compatible with traditional etch, deposition and cleans tools that are optimized for dielectric etches. We will review the critical steps and selectivities required to enable this integration along with bench-marking of each integration option (cut vs. block).

Etching twin core fiber for the temperature-independent refractive index sensing

NASA Astrophysics Data System (ADS)

Zhang, Chuanbiao; Ning, Tigang; Li, Jing; Zheng, Jingjing; Gao, Xuekai; Lin, Heng; Pei, Li

2018-04-01

We proposed an ultra-compact chemically etched twin core fiber (TCF) based optic refractive index (RI) sensor, in which the etched fiber was fabricated by immersing in an aqueous solution of hydrofluoric acid (HF) to etch the cladding. Due to the multipath evolutions of light during the TCF, the mode induced interference pattern can be used for measurement. Numerical simulations were performed, demonstrating that only the cladding mode strongly interacts with the surrounding media, and the higher cladding modes will be more sensitive to external medium. In the experiment demonstration, the RI response characteristics of the sensor were investigated, which shows a relatively high RI sensitivity and a much low temperature cross-sensitivity with about 1.06 × 10-6 RIU °C-1. Due to low cost and easy fabrication, the sensor can be a suitable candidate in the biochemical field.

Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

USGS Publications Warehouse

Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

1996-01-01

Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

Synergy and Self-organization in Tribosystem’s evolution. Energy Model of Friction

NASA Astrophysics Data System (ADS)

Fedorov, S. V.; Assenova, E.

2018-01-01

Different approaches are known to treat self-organization in tribosystems, related to the structural adaptation in the formation of dissipative surface structures and of frictional or tribo-films, using of synergistic modifying of layers and coatings, e.g. of the selective material transfer during friction, etc. Regarding tribological processes in contact systems, self-organization is observed as spontaneous creation of higher ordered structures during the contact interaction. The proposed paper considers friction as process of transformation and dissipation of energy and process of elasto-plastic deformation localized in thin surface layers of the interacting bodies. Еnergetic interpretation of friction is proposed. Based on the energy balance equations of friction, the evolution of tribosystems is followed in its adaptive-dissipative character. It reflects the variable friction surfaces compatibility and the nonlinear dynamics of friction evolution. Structural-energy relationships in the contacting surfaces evolution are obtained. Maximum of tribosystem’s efficiency during the evolution is the stage of self-organzation of the friction surface layers, which is a state of abnormal low friction and wear.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, D.; Sankaranarayanan, S.; Khachariya, D.

We demonstrate a method for nanowire formation by natural selection during wet anisotropic chemical etching in boiling phosphoric acid. Nanowires of sub-10 nm lateral dimensions and lengths of 700 nm or more are naturally formed during the wet etching due to the convergence of the nearby crystallographic hexagonal etch pits. These nanowires are site controlled when formed in augmentation with dry etching. Temperature and power dependent photoluminescence characterizations confirm excitonic transitions up to room temperature. The exciton confinement is enhanced by using two-dimensional confinement whereby enforcing greater overlap of the electron-hole wave-functions. The surviving nanowires have less defects and a small temperaturemore » variation of the output electroluminescent light. We have observed superluminescent behaviour of the light emitting diodes formed on these nanowires. There is no observable efficiency roll off for current densities up to 400 A/cm{sup 2}.« less

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

NASA Astrophysics Data System (ADS)

Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

2017-04-01

Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

Plasma etching a ceramic composite. [evaluating microstructure

NASA Technical Reports Server (NTRS)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.

Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching timemore » increase from 45 to 75 mintunes.« less

Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2017-08-01

Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

Friction Stir Weld Tools

NASA Technical Reports Server (NTRS)

Carter, Robert W. (Inventor); Payton, Lewis N. (Inventor)

2007-01-01

A friction stir weld tool sleeve is supported by an underlying support pin. The pin material is preferably selected for toughness and fracture characteristics. The pin sleeve preferably has a geometry which employs the use of an interrupted thread, a plurality of flutes and/or eccentric path to provide greater flow through. Paddles have been found to assist in imparting friction and directing plastic metal during the welding process.

Friction stir weld tools

NASA Technical Reports Server (NTRS)

Carter, Robert W. (Inventor); Payton, Lewis N. (Inventor)

2007-01-01

A friction stir weld tool sleeve is supported by an underlying support pin. The pin material is preferably selected for toughness and fracture characteristics. The pin sleeve preferably has a geometry which employs the use of an interrupted thread, a plurality of flutes and/or eccentric path to provide greater flow through. Paddles have been found to assist in imparting friction and directing plastic metal during the welding process.

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

NASA Astrophysics Data System (ADS)

Zakour, Sihem Ben; Taleb, Hassen

2017-09-01

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

Time-lapse nanoscopy of friction in the non-Amontons and non-Coulomb regime.

PubMed

Ishida, Tadashi; Sato, Takaaki; Ishikawa, Takahiro; Oguma, Masatsugu; Itamura, Noriaki; Goda, Keisuke; Sasaki, Naruo; Fujita, Hiroyuki

2015-03-11

Originally discovered by Leonard da Vinci in the 15th century, the force of friction is directly proportional to the applied load (known as Amontons' first law of friction). Furthermore, kinetic friction is independent of the sliding speed (known as Coulomb's law of friction). These empirical laws break down at high normal pressure (due to plastic deformation) and low sliding speed (in the transition regime between static friction and kinetic friction). An important example of this phenomenon is friction between the asperities of tectonic plates on the Earth. Despite its significance, little is known about the detailed mechanism of friction in this regime due to the lack of experimental methods. Here we demonstrate in situ time-lapse nanoscopy of friction between asperities sliding at ultralow speed (∼0.01 nm/s) under high normal pressure (∼GPa). This is made possible by compressing and rubbing a pair of nanometer-scale crystalline silicon anvils with electrostatic microactuators and monitoring its dynamical evolution with a transmission electron microscope. Our analysis of the time-lapse movie indicates that superplastic behavior is induced by decrystallization, plastic deformation, and atomic diffusion at the asperity-asperity interface. The results hold great promise for a better understanding of quasi-static friction under high pressure for geoscience, materials science, and nanotechnology.

Surface smoothing of indium tin oxide film by laser-induced photochemical etching

NASA Astrophysics Data System (ADS)

Kang, JoonHyun; Kim, Young-Hwan; Kwon, Seok Joon; Park, Joon-Suh; Park, Kyoung Wan; Park, Jae-Gwan; Han, Il Ki

2017-12-01

Surface smoothing of indium tin oxide (ITO) film by laser irradiation was demonstrated. The ITO surface was etched by choline radicals, which were activated by laser irradiation at a wavelength of 532 nm. The RMS surface roughness was improved from 5.6 to 4.6 nm after 10 min of laser irradiation. We also showed the changes in the surface morphology of the ITO film with various irradiation powers and times.

Antibacterial Effect and Tensile Bond Strength of Self-etching Adhesive Resins with and without Methacryloyloxydodecylpyridinium Bromide: An in vitro Study.

PubMed

Krishnamurthy, Madhuram; Kumar, V Naveen; Leburu, Ashok; Dhanavel, Chakravarthy; Selvendran, Kasiswamy E; Praveen, Nehrudhas

2018-04-01

Aim: The aim of the present study was to compare the antibacterial activity of a self-etching primer containing antibacterial monomer methacryloyloxydodecylpyridinium bromide (MDPB) (Clearfil protect bond) with a conventional self-etching primer without MDPB (Clearfil SE bond) against Streptococcus mutans and the effect of incorporation of MDPB on the tensile bond strength of the experimental self-etching primer (Clearfil protect bond). Materials and methods: The antibacterial activity of the self-etching primers was assessed using agar disk diffusion method and the diameters of the zones of inhibition were measured and ranked. For tensile bond strength testing, 20 noncarious human molars were selected and randomly divided into two groups comprising 10 teeth in each group. Group I specimens were treated with Clearfil SE bond (without MDPB). Group II specimens were treated with Clearfil protect bond (with MDPB). Composite material was placed incrementally and cured for 40 seconds in all the specimens. Tensile bond strength was estimated using the Instron Universal testing machine at a crosshead speed of 1 mm/min. Results: The addition of MDPB into a self-etching primer exerts potential antibacterial effect against S. mutans. The tensile bond strength of MDPB containing self-etching primer was slightly lower than that of the conventional self-etching Clearfil protect bond primer, but the difference was not statistically significant. Conclusion: Thus, a self-etching primer containing MDPB will be a boon to adhesive dentistry as it has bactericidal property with adequate tensile bond strength. Clinical significance: The concept of prevention of extension in adhesive dentistry would result in micro/nanoleakage due to the presence of residual bacteria in the cavity. Self-etching primers with MDPB would improve the longevity of such restorations by providing adequate antibacterial activity without compromising the bond strength. Keywords: Antibacterial property, Methacryloyloxydodecy-lpyridinium bromide, Self-etching primers, Tensile bond strength.

Friction behavior of members of the platinum metals group with gold

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1975-01-01

The adhesion and friction behavior of the platinum metals group was examined with clean surfaces and surfaces selectively contaminated with oxygen, vinyl chloride (C2H3Cl), and methyl mercaptan (CH3SH). A pin or disk specimen configuration was used with the pin being a single crystal of gold of the (111) orientation and with the platinum metal disks also being single crystals of the (111) or (0001) orientation. Loads applied ranged from 1 to 10 g and a sliding velocity of 0.7 mm/min was employed. Results indicate adhesion and transfer of gold to all of the platinum metals. Despite this observation friction differences existed among the metals in the group. These differences are related to surface chemical activity. Adsorption of various friction reducing species was selective. With some adsorbates present strong adhesive forces between metals were still observed.

Study on induced strain in direct nanoimprint lithography

NASA Astrophysics Data System (ADS)

Watanabe, Kenta; Iida, Tatsuya; Yasuda, Masaaki; Kawata, Hiroaki; Hirai, Yoshihiko

2018-06-01

The induced shear strain distribution in a polymer film is investigated by computational study in a direct nanoimprint process. The effects of the polymer thickness, mold pattern shape such as rectangular, triangular or overcut pattern shape, and the coefficient of friction between the mold and the polymer are studied by computational work. As the coefficient of friction increases, the induced shear strain increases along the mold surface. Depending on the polymer thickness, the shear strain is induced in the residual and/or pattern area. In the triangular pattern, the strain is induced in the pattern central area. The results suggest that shear stress remains in the triangular pattern area in the direct nanoimprint process. On the other hand, the rectangular pattern is suitable for suppressing the induced strain inside the pattern.

Selective Plasma Deposition of Fluorocarbon Films on SAMs

NASA Technical Reports Server (NTRS)

Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

2006-01-01

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Modeling of heat transfer in compacted machining chips during friction consolidation process

NASA Astrophysics Data System (ADS)

Abbas, Naseer; Deng, Xiaomin; Li, Xiao; Reynolds, Anthony

2018-04-01

The current study aims to provide an understanding of the heat transfer process in compacted aluminum alloy AA6061 machining chips during the friction consolidation process (FCP) through experimental investigations and mathematical modelling and numerical simulation. Compaction and friction consolidation of machining chips is the first stage of the Friction Extrusion Process (FEP), which is a novel method for recycling machining chips to produce useful products such as wires. In this study, compacted machining chips are modelled as a continuum whose material properties vary with density during friction consolidation. Based on density and temperature dependent thermal properties, the temperature field in the chip material and process chamber caused by frictional heating during the friction consolidation process is predicted. The predicted temperature field is found to compare well with temperature measurements at select points where such measurements can be made using thermocouples.

Characterization of 3d Contact Kinematics and Prediction of Resonant Response of Structures Having 3d Frictional Constraint

NASA Astrophysics Data System (ADS)

Yang, B. D.; Menq, C. H.

1998-11-01

A 3D friction contact model has been developed for the prediction of the resonant response of structures having 3D frictional constraint. In the proposed model, a contact plane is defined and its orientation is assumed invariant. Consequently, the relative motion of the two contacting surfaces can be resolved into two components: the in-plane tangential motion on the contact plane and the normal component perpendicular to the plane. The in-plane tangential relative motion is often two-dimensional, and it can induce stick-slip friction. On the other hand, the normal relative motion can cause variation of the contact normal load and, in extreme circumstances, separation of the two contacting surfaces. In this study, the joined effect of the 2D tangential relative motion and the normal relative motion on the contact kinematics of a friction contact is examined and analytical criteria are developed to determine the transitions among stick, slip, and separation, when experiencing variable normal load. With these transition criteria, the induced friction force on the contact plane and the variable normal load perpendicular to the plane can be predicted for any given cyclic relative motions at the contact interface and hysteresis loops can be produced so as to characterize the equivalent damping and stiffness of the friction contact. These non-linear damping and stiffness along with the harmonic balance method are then used to predict the resonance of a frictionally constrained 3-DOF oscillator. The predicted results are compared with those of the time integration method and the damping effect, the resonant frequency shift, and the jump phenomenon are examined.

Effect of the Conditions of the Nanostructuring Frictional Treatment Process on the Structural and Phase States and the Strengthening of Metastable Austenitic Steel

NASA Astrophysics Data System (ADS)

Makarov, A. V.; Skorynina, P. A.; Yurovskikh, A. S.; Osintseva, A. L.

2017-12-01

The effect of the multiplicity of frictional loading with a sliding synthetic diamond indenter at room temperature in an argon medium and the temperature of loading in the range of -196 to +250°C on the phase composition, fine structure, and micromechanical properties of the surface layer of metastable austenitic chromium-nickel steel has been studied. It has been established that the completeness of the strain-induced martensitic γ → α' transformation in the surface layer of steel is determined by the loading multiplicity and temperature, as well as the level of strengthening grows with an increase in the frictional loading multiplicity, but weakly depends on the frictional treatment temperature. According to the microindentation data, the characteristics of the surface layer strength and resistance to elastic and plastic deformation are improved with an increase in the frictional loading multiplicity. Frictional treatment by scanning with a synthetic diamond indenter at room and negative temperatures provides high quality for the treated surface with a low roughness parameter ( Ra = 80.115 nm), and an increase in the frictional loading temperature to 150-250°C leads to the development of a seizure and growth in Ra to 195-255 nm. Using transmission electron microscopy (TEM), it has been shown that frictional treatment results in the formation of nanocrystalline and fragmented submicrocrystalline structures of strain-induced α'-martensite (at a loading temperature of -196°C) and austenite (at a loading temperature of +250°C) in the surface layer of steel alongside with two-phase martensitic-austenitic structures (at a loading temperature of +20°C).

Tactile perception of skin and skin cream by friction induced vibrations.

PubMed

Ding, Shuyang; Bhushan, Bharat

2016-11-01

Skin cream smooths, softens, and moistens skin by altering surface roughness and tribological properties of skin. Sliding generates vibrations that activate mechanoreceptors located in skin. The brain interprets tactile information to identify skin feel. Understanding the tactile sensing mechanisms of skin with and without cream treatment is important to numerous applications including cosmetics, textiles, and robotics sensors. In this study, frequency spectra of friction force and friction induced vibration signals were carried out to investigate tactile perception by an artificial finger sliding on skin. The influence of normal load, velocity, and cream treatment time were studied. Coherence between friction force and vibration signals were found. The amplitude of vibration decreased after cream treatment, leading to smoother perception. Increasing normal load or velocity between contacting surfaces generated a smoother perception with cream treatment, but rougher perception without treatment. As cream treatment time increases, skin becomes smoother. The related mechanisms are discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, Z. Y.; Breese, M. B. H.; Lin, Y.

2014-05-12

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such asmore » cesium over a wide range of fluences and irradiation geometries.« less

Gas-induced friction and diffusion of rigid rotors

NASA Astrophysics Data System (ADS)

Martinetz, Lukas; Hornberger, Klaus; Stickler, Benjamin A.

2018-05-01

We derive the Boltzmann equation for the rotranslational dynamics of an arbitrary convex rigid body in a rarefied gas. It yields as a limiting case the Fokker-Planck equation accounting for friction, diffusion, and nonconservative drift forces and torques. We provide the rotranslational friction and diffusion tensors for specular and diffuse reflection off particles with spherical, cylindrical, and cuboidal shape, and show that the theory describes thermalization, photophoresis, and the inverse Magnus effect in the free molecular regime.

Selective Acid Etching Improves the Bond Strength of Universal Adhesive to Sound and Demineralized Enamel of Primary Teeth.

PubMed

Antoniazzi, Bruna Feltrin; Nicoloso, Gabriel Ferreira; Lenzi, Tathiane Larissa; Soares, Fabio Zovico Maxnuck; Rocha, Rachel de Oliveira

To evaluate the influence of enamel condition and etching strategy on bond strength of a universal adhesive in primary teeth. Thirty-six primary molars were randomly assigned to six groups (n = 6) according to the enamel condition (sound [S] and demineralized [DEM]/cariogenic challenge by pH cycling prior to restorative procedures) and adhesive system (Scotchbond Universal Adhesive [SBU]) used in either etch-and-rinse (ER) or selfetching (SE) mode, with Clearfil SE Bond as the self-etching control. The adhesives were applied to flat enamel surfaces and composite cylinders (0.72 mm2) were built up. After 24-h storage in water, specimens were subjected to the microshear test. Bond strength (MPa) data were analyzed using two-way ANOVA and Tukey's post-hoc tests (α = 0.05). Significant differences were found considering the factors adhesive system (p = 0.003) and enamel condition (p = 0.001). Demineralized enamel negatively affected the bond strength, with μSBS values approximately 50% lower than those obtained for sound enamel. SBU performed better in etch-and-rinse mode, and the bond strength found for SBU applied in self-etching mode was similar to that of CSE. Enamel etching with phosphoric acid improves the bond strength of a universal adhesive system to primary enamel. Demineralized primary enamel results in lower bond strength.

Effects of internal friction on contact formation dynamics of polymer chain

NASA Astrophysics Data System (ADS)

Bian, Yukun; Li, Peng; Zhao, Nanrong

2018-04-01

A theoretical framework is presented to study the contact formation dynamics of polymer chains, in accompany with an electron-transfer quenching. Based on a non-Markovian Smoluchowski equation supplemented with an exponential sink term, we derive the mean time of contact formation under Wilemski-Fixman approximation. Our particular attentions are paid to the effect of internal friction. We find out that internal friction induces a novel fractional viscosity dependence, which will become more remarkable as internal friction increases. Furthermore, we clarify that internal friction inevitably promotes a diffusion-controlled mechanism by slowing the chain relaxation. Finally, we apply our theory to rationalise the experimental investigation for contact formation of a single-stranded DNA. The theoretical results can reproduce the experimental data very well with quite reasonable estimation for the intrinsic parameters. Such good agreements clearly demonstrate the validity of our theory which has appropriately addressed the very role of internal friction to the relevant dynamics.

Parametric study of the mode coupling instability for a simple system with planar or rectilinear friction

NASA Astrophysics Data System (ADS)

Charroyer, L.; Chiello, O.; Sinou, J.-J.

2016-12-01

In this paper, the study of a damped mass-spring system of three degrees of freedom with friction is proposed in order to highlight the differences in mode coupling instabilities between planar and rectilinear friction assumptions. Well-known results on the effect of structural damping in the field of friction-induced vibration are extended to the specific case of a damped mechanical system with planar friction. It is emphasised that the lowering and smoothing effects are not so intuitive in this latter case. The stability analysis is performed by calculating the complex eigenvalues of the linearised system and by using the Routh-Hurwitz criterion. Parametric studies are carried out in order to evaluate the effects of various system parameters on stability. Special attention is paid to the understanding of the role of damping and the associated destabilisation paradox in mode-coupling instabilities with planar and rectilinear friction assumptions.

Observations on the deformation-induced beta internal friction peak in bcc metals

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.

1974-01-01

During a study of the effects of electron irradiation on the tungsten alpha mechanism, internal friction data were obtained. The data indicate that the mechanism underlying the beta peak does not possess the relaxation parameters generally associated with a simple dislocation process. The significance of the experimental results in the light of beta observations in other metals is discussed. It is suggested that the beta peaks in deformed bcc metals are the anelastic result of the thermally-activated relaxation of deformation-induced imperfections.

Femtosecond-laser induced dynamics of CO on Ru(0001): Deep insights from a hot-electron friction model including surface motion

NASA Astrophysics Data System (ADS)

Scholz, Robert; Floß, Gereon; Saalfrank, Peter; Füchsel, Gernot; Lončarić, Ivor; Juaristi, J. I.

2016-10-01

A Langevin model accounting for all six molecular degrees of freedom is applied to femtosecond-laser induced, hot-electron driven dynamics of Ru(0001)(2 ×2 ):CO. In our molecular dynamics with electronic friction approach, a recently developed potential energy surface based on gradient-corrected density functional theory accounting for van der Waals interactions is adopted. Electronic friction due to the coupling of molecular degrees of freedom to electron-hole pairs in the metal are included via a local density friction approximation, and surface phonons by a generalized Langevin oscillator model. The action of ultrashort laser pulses enters through a substrate-mediated, hot-electron mechanism via a time-dependent electronic temperature (derived from a two-temperature model), causing random forces acting on the molecule. The model is applied to laser induced lateral diffusion of CO on the surface, "hot adsorbate" formation, and laser induced desorption. Reaction probabilities are strongly enhanced compared to purely thermal processes, both for diffusion and desorption. Reaction yields depend in a characteristic (nonlinear) fashion on the applied laser fluence, as well as branching ratios for various reaction channels. Computed two-pulse correlation traces for desorption and other indicators suggest that aside from electron-hole pairs, phonons play a non-negligible role for laser induced dynamics in this system, acting on a surprisingly short time scale. Our simulations on precomputed potentials allow for good statistics and the treatment of long-time dynamics (300 ps), giving insight into this system which hitherto has not been reached. We find generally good agreement with experimental data where available and make predictions in addition. A recently proposed laser induced population of physisorbed precursor states could not be observed with the present low-coverage model.

Large Electric Field-Enhanced-Hardness Effect in a SiO2 Film

NASA Astrophysics Data System (ADS)

Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

2014-03-01

Silicon dioxide films are extensively used in nano and micro-electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation-induced deformation during the friction measurements.

Shearing Low-frictional 3D Granular Materials

NASA Astrophysics Data System (ADS)

Chen, David; Zheng, Hu; Behringer, Robert

Shear jamming occurs in frictional particles over a range of packing fractions, from random loose to random dense. Simulations show shear jamming for frictionless spheres, but over a vanishing range as the system size grows. We use packings of submerged and diffractive index-matched hydrogel particles to determine the shear-induced microscopic response of 3D, low-frictional granular systems near jamming, bridging the gap between frictionless and low friction packings. We visualize the particles by a laser scanning technique, and we track particle motion along with their interparticle contact forces from its 3D-reconstructions. NSF-DMF-1206351, NASA NNX15AD38G, William M. Keck Foundation, and DARPA.

RIE-based Pattern Transfer Using Nanoparticle Arrays as Etch Masks

NASA Astrophysics Data System (ADS)

Hogg, Chip; Majetich, Sara A.; Bain, James A.

2009-03-01

Nanomasking is used to transfer the pattern of a self-assembled array of nanoparticles into an underlying thin film, for potential use as bit-patterned media. We have used this process to investigate the limits of pattern transfer, as a function of gap size in the pattern. Reactive Ion Etching (RIE) is our chosen process, since the gaseous reaction products and high chemical selectivity are ideal features for etching very small gaps. Interstitial surfactant is removed with an O2 plasma, allowing the etchants to penetrate between the particles. Their pattern is transferred into an intermediate SiO2 mask using a CH4-based RIE. This patterned SiO2 layer is finally used as a mask for the MeOH-based RIE which patterns the magnetic film. We present cross-sectional TEM characterization of the etch profiles, as well as magnetic characterization of the film before and after patterning.

Observation of Biological Tissues Using Common Path Optical Coherence Tomography with Gold Coated Conical Tip Lens Fiber

NASA Astrophysics Data System (ADS)

Taguchi, K.; Sugiyama, J.; Totsuka, M.; Imanaka, S.

2012-03-01

In this paper, we proposed a high lateral resolution common-path Fourier domain optical coherence tomography(OCT) system with the use of a chemically etched single mode fiber. In our experiments, single mode optical fiber for 1310nm was used for preparing the tapered tips. Our system used a conical microlens that was chemically etched by selective chemical etching technique using an etching solution of buffered hydrofluoric acid (BHF). From experimental results, we verified that our proposed optical coherence tomography system could operate as a common-path Fourier domain OCT system and conical tip lens fiber was very useful for a high lateral resolution common-path Fourier domain OCT system. Furthermore, we could observe a surface of paramecium bursaria and symbiotic chlorella in the paramecium bursaria using gold coated conical-tip fiber in the water.

Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching.

PubMed

Haab, Anna; Mikulics, Martin; Sutter, Eli; Jin, Jiehong; Stoica, Toma; Kardynal, Beata; Rieger, Torsten; Grützmacher, Detlev; Hardtdegen, Hilde

2014-06-27

The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

DOE PAGES

Fischer, Arthur J.; Anderson, P. Duke; Koleske, Daniel D.; ...

2017-08-18

We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individualmore » QDs directly confirm nonclassical, antibunching behavior. Lastly, our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.« less

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

NASA Astrophysics Data System (ADS)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fischer, Arthur J.; Anderson, P. Duke; Koleske, Daniel D.

We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individualmore » QDs directly confirm nonclassical, antibunching behavior. Lastly, our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.« less

Track-Etched Magnetic Micropores for Immunomagnetic Isolation of Pathogens

PubMed Central

Muluneh, Melaku; Shang, Wu

2014-01-01

A microfluidic chip is developed to selectively isolate magnetically tagged cells from heterogeneous suspensions, the track-etched magnetic micropore (TEMPO) filter. The TEMPO consists of an ion track-etched polycarbonate membrane coated with soft magnetic film (Ni20Fe80). In the presence of an applied field, provided by a small external magnet, the filter becomes magnetized and strong magnetic traps are created along the edges of the micropores. In contrast to conventional microfluidics, fluid flows vertically through the porous membrane allowing large flow rates while keeping the capture rate high and the chip compact. By utilizing track-etching instead of conventional semiconductor fabrication, TEMPOs can be fabricated with microscale pores over large areas A > 1 cm2 at little cost (< 5 ¢ cm−2). To demonstrate the utility of this platform, a TEMPO with 5 μm pore size is used to selectively and rapidly isolate immunomagnetically targeted Escherichia coli from heterogeneous suspensions, demonstrating enrichment of ζ > 500 at a flow rate of Φ = 5 mL h−1. Furthermore, the large density of micropores (ρ = 106 cm−2) allows the TEMPO to sort E. coli from unprocessed environmental and clinical samples, as the blockage of a few pores does not significantly change the behavior of the device. PMID:24535921

Leaping lizards landing on leaves: escape-induced jumps in the rainforest canopy challenge the adhesive limits of geckos.

PubMed

Higham, Timothy E; Russell, Anthony P; Niklas, Karl J

2017-06-01

The remarkable adhesive capabilities of geckos have garnered attention from scientists and the public for centuries. Geckos are known to have an adhesive load-bearing capacity far in excess (by 100-fold or more) of that required to support their body mass or accommodate the loading imparted during maximal locomotor acceleration. Few studies, however, have investigated the ecological contexts in which geckos use their adhesive system and how this may influence its properties. Here we develop a modelling framework to assess whether their prodigious adhesive capacity ever comes under selective challenge. Our investigation is based upon observations of escape-induced aerial descents of canopy-dwelling arboreal geckos that are rapidly arrested by clinging to leaf surfaces in mid-fall. We integrate ecological observations, adhesive force measurements, and body size and shape measurements of museum specimens to conduct simulations. Using predicted bending mechanics of petioles and leaf midribs, we find that the drag coefficient of the gecko, the size of the gecko and the size of the leaf determine impact forces. Regardless of the landing surface, safety factors for geckos range from a maximum of just over 10 to a minimum of well under one, which would be the point at which the adhesive system fails. In contrast to previous research that intimates that gecko frictional adhesive capacity is excessive relative to body mass, we demonstrate that realistic conditions in nature may result in frictional capacity being pushed to its limit. The rapid arrest of the lizard from its falling velocity likely results in the maximal loading to which the adhesive system is exposed during normal activities. We suggest that such activities might be primary determinants in driving their high frictional adhesive capacity. © 2017 The Author(s).

Velocity-strengthening friction significantly affects interfacial dynamics, strength and dissipation

PubMed Central

Bar-Sinai, Yohai; Spatschek, Robert; Brener, Efim A.; Bouchbinder, Eran

2015-01-01

Frictional interfaces abound in natural and man-made systems, yet their dynamics are not well-understood. Recent extensive experimental data have revealed that velocity-strengthening friction, where the steady-state frictional resistance increases with sliding velocity over some range, is a generic feature of such interfaces. This physical behavior has very recently been linked to slow stick-slip motion. Here we elucidate the importance of velocity-strengthening friction by theoretically studying three variants of a realistic friction model, all featuring identical logarithmic velocity-weakening friction at small sliding velocities, but differ in their higher velocity behaviors. By quantifying energy partition (e.g. radiation and dissipation), the selection of interfacial rupture fronts and rupture arrest, we show that the presence or absence of strengthening significantly affects the global interfacial resistance and the energy release during frictional instabilities. Furthermore, we show that different forms of strengthening may result in events of similar magnitude, yet with dramatically different dissipation and radiation rates. This happens because the events are mediated by rupture fronts with vastly different propagation velocities, where stronger velocity-strengthening friction promotes slower rupture. These theoretical results may have significant implications on our understanding of frictional dynamics. PMID:25598161

Simplified fast neutron dosimeter

DOEpatents

Sohrabi, Mehdi

1979-01-01

Direct fast-neutron-induced recoil and alpha particle tracks in polycarbonate films may be enlarged for direct visual observation and automated counting procedures employing electrochemical etching techniques. Electrochemical etching is, for example, carried out in a 28% KOH solution at room temperature by applying a 2000 V peak-to-peak voltage at 1 kHz frequency. Such recoil particle amplification can be used for the detection of wide neutron dose ranges from 1 mrad. to 1000 rads. or higher, if desired.

Surface Modification of Plastic Substrates Using Atomic Hydrogen

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking of hydrogen molecules on heated tungsten wire. Surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. In addition, plastic surface was reduced by AHA. The surface can be modified by the recombination reaction of atomic hydrogen, the reduction reaction and selective etching of halogen atom. It is concluded that this method is a promising technique for improvement of adhesion between inorganic films and plastic substrates at low temperatures.

Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

PubMed Central

Dumée, Ludovic F.; She, Fenghua; Duke, Mikel; Gray, Stephen; Hodgson, Peter; Kong, Lingxue

2014-01-01

Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm) as well as the sintering pressure (5–20 ton·m−2) and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested. PMID:28344241

Simulations of Control Schemes for Inductively Coupled Plasma Sources

NASA Astrophysics Data System (ADS)

Ventzek, P. L. G.; Oda, A.; Shon, J. W.; Vitello, P.

1997-10-01

Process control issues are becoming increasingly important in plasma etching. Numerical experiments are an excellent test-bench for evaluating a proposed control system. Models are generally reliable enough to provide information about controller robustness, fitness of diagnostics. We will present results from a two dimensional plasma transport code with a multi-species plasma chemstry obtained from a global model. [1-2] We will show a correlation of external etch parameters (e.g. input power) with internal plasma parameters (e.g. species fluxes) which in turn are correlated with etch results (etch rate, uniformity, and selectivity) either by comparison to experiment or by using a phenomenological etch model. After process characterization, a control scheme can be evaluated since the relationship between the variable to be controlled (e.g. uniformity) is related to the measurable variable (e.g. a density) and external parameter (e.g. coil current). We will present an evaluation using the HBr-Cl2 system as an example. [1] E. Meeks and J. W. Shon, IEEE Trans. on Plasma Sci., 23, 539, 1995. [2] P. Vitello, et al., IEEE Trans. on Plasma Sci., 24, 123, 1996.

Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

NASA Astrophysics Data System (ADS)

Leem, J. W.; Song, Y. M.; Lee, Y. T.; Yu, J. S.

2010-09-01

Silicon (Si) subwavelength grating (SWG) structures were fabricated on Si substrates by holographic lithography and subsequent inductively coupled plasma (ICP) etching process using SiCl4 with or without Ar addition for solar cell applications. To ensure a good nanosized pattern transfer into the underlying Si layer, the etch selectivity of Si over the photoresist mask is optimized by varying the etching parameters, thus improving antireflection characteristics. For antireflection analysis of Si SWG surfaces, the optical reflectivity is measured experimentally and it is also calculated theoretically by a rigorous coupled-wave analysis. The reflectance depends on the height, period, and shape of two-dimensional periodic Si subwavelength structures, correlated with ICP etching parameters. The optimized Si SWG structure exhibits a dramatic decrease in optical reflection of the Si surface over a wide angle of incident light ( θ i ), i.e. less than 5% at wavelengths of 300-1100 nm, leading to good wide-angle antireflection characteristics (i.e. solar-weighted reflection of 1.7-4.9% at θ i <50°) of Si solar cells.

Atomic-layer soft plasma etching of MoS2

PubMed Central

Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

2016-01-01

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

A method for fabricating a micro-structured surface of polyimide with open and closed pores

NASA Astrophysics Data System (ADS)

Ma, Yong-Won; Oh, Jae Yong; Ahn, Seokyoung; Shin, Bo Sung

2016-08-01

A new approach for fabricating open and closed porous structures based on laser processing is presented. Liquid polyimide (PI) was mixed with azodicarbonamide which is a chemical blowing agent (CBA), and the mixture was spin-coated and pre-cured in order to fabricate solid PI films. Porous PI was prepared by irradiating PI films mixed with azodicarbonamide. The PI film with azodicarbonamide was etched by using laser ablation, and the azodicarbonamide was decomposed due to the heat induced by the absorbed laser energy. At higher laser beam irradiation, more pores were fabricated due to the resulting increase in the CBA decomposition from 27 mJ/cm2 to 40 mJ/cm2 per single pulse. A fluence of about 50 mJ/cm2 resulted in fewer and larger open pores, which were formed by the coalescence of small pores. In contrast, a closed porous structure was fabricated at a fluence of less than 1 mJ/cm2 because PI was barely etched. The proposed method can be used to create open and closed porous structures selectively and is not limited to thermosetting polymers, but is also effective with thermoplastic polymers.

Microstructural characterization of Ti-6Al-4V alloy subjected to the duplex SMAT/plasma nitriding.

PubMed

Pi, Y; Faure, J; Agoda-Tandjawa, G; Andreazza, C; Potiron, S; Levesque, A; Demangel, C; Retraint, D; Benhayoune, H

2013-09-01

In this study, microstructural characterization of Ti-6Al-4V alloy, subjected to the duplex surface mechanical attrition treatment (SMAT)/nitriding treatment, leading to improve its mechanical properties, was carried out through novel and original samples preparation methods. Instead of acid etching which is limited for morphological characterization by scanning electron microscopy (SEM), an original ion polishing method was developed. Moreover, for structural characterization by transmission electron microscopy (TEM), an ion milling method based with the use of two ions guns was also carried out for cross-section preparation. To demonstrate the efficiency of the two developed methods, morphological investigations were done by traditional SEM and field emission gun SEM. This was followed by structural investigations through selected area electron diffraction (SAED) coupled with TEM and X-ray diffraction techniques. The results demonstrated that ionic polishing allowed to reveal a variation of the microstructure according to the surface treatment that could not be observed by acid etching preparation. TEM associated to SAED and X-ray diffraction provided information regarding the nanostructure compositional changes induced by the duplex SMAT/nitriding process. Copyright © 2013 Wiley Periodicals, Inc.

Stimulus responsive hydrogel-coated etched fiber Bragg grating for carcinogenic chromium (VI) sensing

NASA Astrophysics Data System (ADS)

Kishore, Pabbisetti Vayu Nandana; Madhuvarasu, Sai Shankar; Moru, Satyanarayana

2018-01-01

This paper proposes a chemo-mechanical-optical sensing approach for the detection of carcinogenic chromium (VI) metal ion using an etched fiber Bragg grating (FBG) coated with stimulus responsive hydrogel. Hydrogel synthesized from the blends of (3-acrylamidopropyl)-trimethylammonium chloride, which is highly responsive to chromium ions suffers a volume change when placed in Cr solution. When the proposed sensor system is exposed to various concentrations of Cr (VI) ion solution, FBG peak shifts due to the mechanical strain induced by the swelling of the hydrogel. The peak shift is correlated with the concentration of the Cr (VI) metal ion. Due to the reduction in the cladding diameter of FBG, wastage of swelling force due to hydrogel on FBG is lowered and utilized for more wavelength peak shift of FBG resulting in the increase in the sensitivity. The resolution of the sensor system is found to be 0.072 ppb. Trace amounts of chromium (VI) ion as low as 10 ppb can be sensed by this method. The sensor has shown good sensitivity, selectivity, and repeatability. The salient features of the sensors are its compact size, light weight, and adoptability for remote monitoring.

Effect of surface etching and electrodeposition of copper on nitinol

NASA Astrophysics Data System (ADS)

Ramos-Moore, E.; Rosenkranz, A.; Matamala, L. F.; Videla, A.; Durán, A.; Ramos-Grez, J.

2017-10-01

Nitinol-based materials are very promising for medical and dental applications since those materials can combine shape memory, corrosion resistance, biocompatibility and antibacterial properties. In particular, surface modifications and coating deposition can be used to tailor and to unify those properties. We report preliminary results on the study of the effect of surface etching and electrodeposition of Copper on Nitinol using optical, chemical and thermal techniques. The results show that surface etching enhances the surface roughness of Nitinol, induces the formation of Copper-based compounds at the Nitinol-Copper interface, reduces the austenitic-martensitic transformations enthalpies and reduces the Copper coating roughness. Further studies are needed in order to highlight the influence of the electrodeposited Copper on the memory shape properties of NiTi.

SEMICONDUCTOR MATERIALS: Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

NASA Astrophysics Data System (ADS)

Xiaofeng, Chen; Nuofu, Chen; Jinliang, Wu; Xiulan, Zhang; Chunlin, Chai; Yude, Yu

2009-08-01

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

Effects of dry etching processes on exciton and polariton characteristics in ZnTe

NASA Astrophysics Data System (ADS)

Sun, J. H.; Xie, W. B.; Shen, W. Z.; Ogawa, H.; Guo, Q. X.

2003-12-01

We have employed temperature-dependent reflection spectra to study the effects of reactive ion etching (RIE) on the exciton and polariton characteristics in ZnTe crystals exposed to CH4/H2 gases under different rf plasma powers. Classic exciton-polariton theory has been used to calculate the reflection spectra. By comparing with an as-grown ZnTe crystal and the temperature-dependent behavior, we are able to identify the excitons and RIE-induced polariton structures in these dry etched ZnTe crystals. An increase of the rf plasma power will lead to an increase of defect density in the surface damage layers, resulting in a decrease of the photon energies of the observed exciton and polariton structures.

Adaptive controller for regenerative and friction braking system

DOEpatents

Davis, R.I.

1990-10-16

A regenerative and friction braking system for a vehicle having one or more road wheels driven by an electric traction motor includes a driver responsive device for producing a brake demand signal having a magnitude corresponding to the level of braking force selected by the driver and friction and regenerative brakes operatively connected with the road wheels of the vehicle. A system according to this invention further includes control means for operating the friction and regenerative braking subsystems so that maximum brake torques sustainable by the road wheels of the vehicle without skidding or slipping will not be exceeded. 8 figs.

Adaptive controller for regenerative and friction braking system

DOEpatents

Davis, Roy I.

1990-01-01

A regenerative and friction braking system for a vehicle having one or more roadwheels driven by an electric traction motor includes a driver responsive device for producing a brake demand signal having a magnitude corresponding to the level of braking force selected by the driver and friction and regenerative brakes operatively connected with the roadwheels of the vehicle. A system according to this invention further includes control means for operating the friction and regenerative braking subsystems so that maximum brake torques sustainable by the roadwheels of the vehicle without skidding or slipping will not be exceeded.

Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)

NASA Astrophysics Data System (ADS)

Naddaf, M.; Saloum, S.

2009-10-01

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is characterized by atomic force microscopy (AFM), room temperature photoluminescence (PL), Raman spectroscopy and optical reflectance measurements. AFM imaging reveals that the porous GaAs layer is consisted of a pillar-like of few nm in width distributed between more-reduced size nanostructures. In addition to the “infrared” PL band of un-etched GaAs, a strong “green” PL band is observed in the etched sample. The broad visible PL band of a high-energy (3.82 eV) excitation is found to compose of two PL band attributed to excitons confinement in two different sizes distribution of GaAs nanocrystals. The quantum confinement effects in GaAs nanocrystallites is also evidenced from Raman spectroscopy through the pronounced appearance of the transverse optical (TO) phonon line in the spectra of the porous sample. Porosity-induced a significant reduction of the specular reflection, in the spectral range (400-800 nm), is also demonstrated.

Influence of subsurface defects on damage performance of fused silica in ultraviolet laser

NASA Astrophysics Data System (ADS)

Huang, Jin; Zhou, Xinda; Liu, Hongjie; Wang, Fengrui; Jiang, Xiaodong; Wu, Weidong; Tang, Yongjian; Zheng, Wanguo

2013-02-01

In ultraviolet pulse laser, damage performance of fused silica optics is directly dependent on the absorptive impurities and scratches in subsurface, which are induced by mechanical polishing. In the research about influence of subsurface defects on damage performance, a series of fused silica surfaces with various impurity concentrations and scratch structures were created by hydrofluoric (HF) acid solution etching. Time of Flight secondary ion mass spectrometry and scanning probe microprobe revealed that with increasing etching depth, impurity concentrations in subsurface layers are decreased, the scratch structures become smoother and the diameter:depth ratio is increased. Damage performance test with 355-nm pulse laser showed that when 600 nm subsurface thickness is removed by HF acid etching, laser-induced damage threshold of fused silica is raised by 40 percent and damage density is decreased by over one order of magnitude. Laser weak absorption was tested to explain the cause of impurity elements impacting damage performance, field enhancement caused by change of scratch structures was calculated by finite difference time domain simulation, and the calculated results are in accord with the damage test results.

Study of the formation of thermochemical laser-induced periodic surface structures on Cr, Ti, Ni and NiCr films under femtosecond irradiation

NASA Astrophysics Data System (ADS)

Dostovalov, A. V.; Korolkov, V. P.; Terentyev, V. S.; Okotrub, K. A.; Dultsev, F. N.; Babin, S. A.

2017-07-01

The formation of femtosecond laser-induced periodic surface structures (LIPSS's) on Cr, Ti, Ni and NiCr films (with different Cr contents) is investigated. It is established that thermochemical LIPSS's with periods of 950, 930 and 980 nm are formed, respectively, on the surfaces of titanium, chromium, and nichrome (with a chromium content of 20%); however, thermochemical LIPSS's are not formed on the surfaces of nickel and nichrome with a low chromium content, although Raman data indicate that oxidation occurs in all cases. A weakly ordered ablated structure with a period of 250-300 nm is found to be formed on oxidised areas of thermochemical LIPSS's in the case of chromium and nichrome (80/20). Experimental data on selective etching of thermochemical LIPSS's on titanium and chromium films are presented.

Focused-ion-beam-inflicted surface amorphization and gallium implantation--new insights and removal by focused-electron-beam-induced etching.

PubMed

Roediger, P; Wanzenboeck, H D; Waid, S; Hochleitner, G; Bertagnolli, E

2011-06-10

Recently focused-electron-beam-induced etching of silicon using molecular chlorine (Cl(2)-FEBIE) has been developed as a reliable and reproducible process capable of damage-free, maskless and resistless removal of silicon. As any electron-beam-induced processing is considered non-destructive and implantation-free due to the absence of ion bombardment this approach is also a potential method for removing focused-ion-beam (FIB)-inflicted crystal damage and ion implantation. We show that Cl(2)-FEBIE is capable of removing FIB-induced amorphization and gallium ion implantation after processing of surfaces with a focused ion beam. TEM analysis proves that the method Cl(2)-FEBIE is non-destructive and therefore retains crystallinity. It is shown that Cl(2)-FEBIE of amorphous silicon when compared to crystalline silicon can be up to 25 times faster, depending on the degree of amorphization. Also, using this method it has become possible for the first time to directly investigate damage caused by FIB exposure in a top-down view utilizing a localized chemical reaction, i.e. without the need for TEM sample preparation. We show that gallium fluences above 4 × 10(15) cm(-2) result in altered material resulting from FIB-induced processes down to a depth of ∼ 250 nm. With increasing gallium fluences, due to a significant gallium concentration close beneath the surface, removal of the topmost layer by Cl(2)-FEBIE becomes difficult, indicating that gallium serves as an etch stop for Cl(2)-FEBIE.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Shear Bond Strengths of Different Adhesive Systems to Biodentine

PubMed Central

Odabaş, Mesut Enes; Bani, Mehmet; Tirali, Resmiye Ebru

2013-01-01

The aim of this study was to measure the shear bond strength of different adhesive systems to Biodentine with different time intervals. Eighty specimens of Biodentine were prepared and divided into 8 groups. After 12 minutes, 40 samples were randomly selected and divided into 4 groups of 10 each: group 1: (etch-and-rinse adhesive system) Prime & Bond NT; group 2: (2-step self-etch adhesive system) Clearfil SE Bond; group 3: (1-step self-etch adhesive systems) Clearfil S3 Bond; group 4: control (no adhesive). After the application of adhesive systems, composite resin was applied over Biodentine. This procedure was repeated 24 hours after mixing additional 40 samples, respectively. Shear bond strengths were measured using a universal testing machine, and the data were subjected to 1-way analysis of variance and Scheffé post hoc test. No significant differences were found between all of the adhesive groups at the same time intervals (12 minutes and 24 hours) (P > .05). Among the two time intervals, the lowest value was obtained for group 1 (etch-and-rinse adhesive) at a 12-minute period, and the highest was obtained for group 2 (two-step self-etch adhesive) at a 24-hour period. The placement of composite resin used with self-etch adhesive systems over Biodentine showed better shear bond strength. PMID:24222742

Shear bond strengths of different adhesive systems to biodentine.

PubMed

Odabaş, Mesut Enes; Bani, Mehmet; Tirali, Resmiye Ebru

2013-01-01

The aim of this study was to measure the shear bond strength of different adhesive systems to Biodentine with different time intervals. Eighty specimens of Biodentine were prepared and divided into 8 groups. After 12 minutes, 40 samples were randomly selected and divided into 4 groups of 10 each: group 1: (etch-and-rinse adhesive system) Prime & Bond NT; group 2: (2-step self-etch adhesive system) Clearfil SE Bond; group 3: (1-step self-etch adhesive systems) Clearfil S(3) Bond; group 4: control (no adhesive). After the application of adhesive systems, composite resin was applied over Biodentine. This procedure was repeated 24 hours after mixing additional 40 samples, respectively. Shear bond strengths were measured using a universal testing machine, and the data were subjected to 1-way analysis of variance and Scheffé post hoc test. No significant differences were found between all of the adhesive groups at the same time intervals (12 minutes and 24 hours) (P > .05). Among the two time intervals, the lowest value was obtained for group 1 (etch-and-rinse adhesive) at a 12-minute period, and the highest was obtained for group 2 (two-step self-etch adhesive) at a 24-hour period. The placement of composite resin used with self-etch adhesive systems over Biodentine showed better shear bond strength.

Sculpting Silica Colloids by Etching Particles with Nonuniform Compositions

PubMed Central

2017-01-01

We present the synthesis of new shapes of colloidal silica particles by manipulating their chemical composition and subsequent etching. Segments of silica rods, prepared by the ammonia catalyzed hydrolysis and condensation of tetraethylorthosilicate (TEOS) from polyvinylpyrrolidone loaded water droplets, were grown under different conditions. Upon decreasing temperature, delaying ethanol addition, or increasing monomer concentration, the rate of dissolution of the silica segment subsequently formed decreased. A watery solution of NaOH (∼mM) selectively etched these segments. Further tuning the conditions resulted in rod–cone or cone–cone shapes. Deliberately modulating the composition along the particle’s length by delayed addition of (3-aminopropyl)-triethoxysilane (APTES) also allowed us to change the composition stepwise. The faster etching of this coupling agent in neutral conditions or HF afforded an even larger variety of particle morphologies while in addition changing the chemical functionality. A comparable step in composition was applied to silica spheres. Biamine functional groups used in a similar way as APTES caused a charge inversion during the growth, causing dumbbells and higher order aggregates to form. These particles etched more slowly at the neck, resulting in a biconcave silica ring sandwiched between two silica spheres, which could be separated by specifically etching the functionalized layer using HF. PMID:28413261

Bonding of universal adhesives to dentine--Old wine in new bottles?

PubMed

Chen, C; Niu, L-N; Xie, H; Zhang, Z-Y; Zhou, L-Q; Jiao, K; Chen, J-H; Pashley, D H; Tay, F R

2015-05-01

Multi-mode universal adhesives offer clinicians the choice of using the etch-and-rinse technique, selective enamel etch technique or self-etch technique to bond to tooth substrates. The present study examined the short-term in vitro performance of five universal adhesives bonded to human coronal dentine. Two hundred non-carious human third molars were assigned to five groups based on the type of the universal adhesives (Prime&Bond Elect, Scotchbond Universal, All-Bond Universal, Clearfil Universal Bond and Futurabond U). Two bonding modes (etch-and-rinse and self-etch) were employed for each adhesive group. Bonded specimens were stored in deionized water for 24h or underwent a 10,000-cycle thermocycling ageing process prior to testing (N=10). Microtensile bond testing (μTBS), transmission electron microscopy (TEM) of resin-dentine interfaces in non-thermocycled specimens and scanning electron microscopy (SEM) of tracer-infused water-rich zones within hybrid layers of thermocycled specimens were performed. Both adhesive type and testing condition (with/without thermocycling) have significant influences on μTBS. The use of each adhesive in either the etch-and-rinse or self-etch application mode did not result in significantly different μTBS to dentine. Hybrid layers created by these adhesives in the etch-and-rinse bonding mode and self-etch bonding mode were ∼5μm and ≤0.5μm thick respectively. Tracer-infused regions could be identified within the resin-dentine interface from all the specimens prepared. The increase in versatility of universal adhesives is not accompanied by technological advances for overcoming the challenges associated with previous generations of adhesives. Therapeutic adhesives with bio-protective and bio-promoting effects are still lacking in commercialized adhesives. Universal adhesives represent manufacturers' attempt to introduce versatility in product design via adaptation of a single-bottle self-etch adhesive for other application modes without compromising its bonding effectiveness. Published by Elsevier Ltd.

Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

NASA Astrophysics Data System (ADS)

Westerik, P. J.; Vijselaar, W. J. C.; Berenschot, J. W.; Tas, N. R.; Huskens, J.; Gardeniers, J. G. E.

2018-01-01

For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

Etched poly(ether ether ketone) jacket stir bar with detachable dumbbell-shaped structure for stir bar sorptive extraction.

PubMed

Zhou, Wei; Wang, Chenlu; Wang, Xuemei; Chen, Zilin

2018-06-08

Development of stir bar sorptive extraction (SBSE) device with high stability and extraction efficiency is critical and challenging by date. In this work, etched poly(ether ether ketone) (PEEK) tube with high mechanical strength and large specific surface area was used as jacket for SBSE device. By etching with concentrated sulfuric acid, the smooth outer surface of PEEK become porous with plenty of micro holes, which was beneficial for coating of sorbents and significantly improved the extraction performance. After functionalized by bio-polydopamine method, strong hydrophobic p-naphtholbenzein molecular was immobilized onto the chemical resistant PEEK surface (PNB@E-PEEK) as stationary phase. We also firstly developed a simple detachable dumbbell-shaped structure for improving the workability of PEEK jacket stir bar. The dumbbell-shaped construction can eliminate the friction between stir bar and container, and the design of detachable structure make elution can be accomplished easier with small amount of organic solvent. It was interesting that the developed detachable dumbbell-shaped PNB@E-PEEK stir bar showed exceptional stability and extraction efficiency for SBSE enrichment of multiple analytes including several Sudan dyes, triazines, polycyclic aromatic hydrocarbons (PAHs), alkaloids and flavonoid. By coupling with high performance liquid chromatography-ultraviolet detection (HPLC-UV), PNB@E-PEEK stir bar based SBSE-HPLC-UV method was applied for the analysis of common Sudan dye pollutants. The method showed low limits of detection (0.02-0.03 ng/mL), good linearity (R 2  ≥ 0.9979) and good reproducibility (relative standard deviation ≤ 7.96%). It has been successfully applied to determine three dye pollutants in tap and lake water. Copyright © 2018 Elsevier B.V. All rights reserved.

Effect of etching time and resin bond on the flexural strength of IPS e.max Press glass ceramic.

PubMed

Xiaoping, Luo; Dongfeng, Ren; Silikas, Nick

2014-12-01

To evaluate the effect of hydrofluoric acid (HFA) etching time and resin cement bond on the flexural strength of IPS e.max(®) Press glass ceramic. Two hundred and ten bars, 25mm×3mm×2mm, were made from IPS e.max(®) Press ingots through lost-wax, hot-pressed ceramic fabrication technology and randomly divided into five groups with forty-two per group after polishing. The ceramic surfaces of different groups were etched by 9.5% hydrofluoric acid gel for 0, 20, 40, 60 and 120s respectively. Two specimens of each group were selected randomly to examine the surface roughness and 3-dimensional topography with atomic force microscope (AFM), and microstructure was analyzed by the field emission scanning electron microscope (FE-SEM). Then each group were subdivided into two subgroups (n=20). One subgroup of this material was selected to receive a thin (approximately 0.1mm) layer of resin luting agent (Variolink N) whereas the other subgroup remained unaltered. Half of subgroup's specimens were thermocycled 10,000 times before a 3-point bending test in order to determine the flexural strength. Interface between resin cement and ceramic was examined with field emission scanning electronic microscope. Roughness values increased with increasing etching time. The mean flexural strength values of group 0s, 20s, 40s, 60s and 120s were 384±33, 347±43, 330±53, 327±67 and 317±41MPa respectively. Increasing HF etching times reduced the mean flexural strength (p<0.05). However, the mean flexural strength of each group, except group 0s, increased significantly to 420±31, 435±50, 400±39 and 412±58MPa after the application of dual-curing resin cement. In the present investigation, no significant differences after thermocycling on the flexural strengths were evident. Overtime HF etching could have a wakening effect on IPS e.max(®) Press glass ceramic, but resin cement bonding to appropriately etched surface would strengthen the dental ceramic. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Anisotropic etching of platinum electrodes at the onset of cathodic corrosion

PubMed Central

Hersbach, Thomas J. P.; Yanson, Alexei I.; Koper, Marc T. M.

2016-01-01

Cathodic corrosion is a process that etches metal electrodes under cathodic polarization. This process is presumed to occur through anionic metallic reaction intermediates, but the exact nature of these intermediates and the onset potential of their formation is unknown. Here we determine the onset potential of cathodic corrosion on platinum electrodes. Electrodes are characterized electrochemically before and after cathodic polarization in 10 M sodium hydroxide, revealing that changes in the electrode surface start at an electrode potential of −1.3 V versus the normal hydrogen electrode. The value of this onset potential rules out previous hypotheses regarding the nature of cathodic corrosion. Scanning electron microscopy shows the formation of well-defined etch pits with a specific orientation, which match the voltammetric data and indicate a remarkable anisotropy in the cathodic etching process, favouring the creation of (100) sites. Such anisotropy is hypothesized to be due to surface charge-induced adsorption of electrolyte cations. PMID:27554398

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Characterization of selectively etched halloysite nanotubes by acid treatment

NASA Astrophysics Data System (ADS)

Garcia-Garcia, Daniel; Ferri, Jose M.; Ripoll, Laura; Hidalgo, Montserrat; Lopez-Martinez, Juan; Balart, Rafael

2017-11-01

Halloysite nanotubes (HNTs) are a type of naturally occurring inorganic nanotubes that are characterized by a different composition between their external and internal walls. The internal walls are mainly composed of alumina whilst external walls are composed of silica. This particular structure offers a dual surface chemistry that allows different selective surface treatments which can be focused on increasing the lumen, increasing porosity, etc. In this work, HNTs were chemically treated with different acids (sulphuric, acetic and acrylic acid), for 72 h at a constant temperature of 50 °C. As per the obtained results, the treatment with sulphuric acid is highly aggressive and the particular shape of HNTs is almost lost, with a remarkable increase in porosity. The BET surface area increases from 52.9 (untreated HNTs) up to 132.4 m2 g-1 with sulphuric acid treatment, thus showing an interesting potential in the field of catalysis. On the other hand, the treatment with acetic acid led to milder effects with a noticeable increase in the lumen diameter that changed from 13.8 nm (untreated HNTs) up to 18.4 nm which the subsequent increase in the loading capacity by 77.8%. The aluminium content was measured by X-ray fluorescence (XRF) and laser induced breakdown spectroscopy (LIBS). The final results using two systems, suggest a good correlation between the acid strength and the aluminium reduction. Consequently, is possible to conclude that new applications for HNTs can be derived from selective etching with acids. Sulphuric acid widens the potential of HNTs in the field of catalysis while weak acids such as acetic and acrylic acids give a controlled and homogeneous lumen increase with the corresponding increase in the loading capacity.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

NASA Astrophysics Data System (ADS)

Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

2017-04-01

Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co3O4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co3O4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

PubMed Central

Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

2016-01-01

Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a highly significant result (p<.001). GrD2 had a mean dentinal tubule diameter of 2.78μm and GrD3 of 1.09μm. Conclusion The present study revealed type I etching pattern after acid etching, while type III etching pattern in enamel after laser etching. The lased dentin showed preferential removal of intertubular dentin while acid etching had more effect on the peritubular dentin. No significant differences was observed in removal of smear layer between the acid etched and lased groups. Although diameter of the exposed dentinal tubules was lesser after lased treatment in comparison to acid etching, further long term in vivo studies are needed with different parameters to establish the usage of Er,Cr:YSGG as a sole etching agent. PMID:27437337

Large Electric Field–Enhanced–Hardness Effect in a SiO2 Film

PubMed Central

Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

2014-01-01

Silicon dioxide films are extensively used in nano and micro–electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation–induced deformation during the friction measurements. PMID:24681517

Breakdown of Amontons' Law of Friction in Sheared-Elastomer with Local Amontons' Friction

NASA Astrophysics Data System (ADS)

Matsukawa, Hiroshi; Otsuki, Michio

2012-02-01

It is well known that Amontons' law of friction i.e. the frictional force against the sliding motion of solid object is proportional to the loading force and not dependent on the contact area, holds well for various systems. Here we show, however, the breakdown of the Amontons' law for the elastic object which have local friction obeying Amontons' law and is under uniform pressure by FEM calculation The external shearing force applied to the trailing edge of the sample induces local slip. The range of the slip increases with the increasing external force adiabatically at first. When the range reaches the critical magnitude, the slips moves rapidly and reaches the leading edge of the sample then the whole system slides. These behaviors are consistent with the experiment by Rubinstein et.al. (Phys. Rev. Lett. 98, 226103). The static frictional coefficient, the ratio between the static frictional force for the whole system and the loading force, decreases with the increasing pressure. This means the breakdown of Amontons' law. The pressure dependence of the frictional coefficient is caused by the change of the critical length of the local slip. The behaviors of the local slip and the frictional coefficient are well explained by the 1 dimensional model analytically.

Selective molecular sieving through porous graphene.

PubMed

Koenig, Steven P; Wang, Luda; Pellegrino, John; Bunch, J Scott

2012-11-01

Membranes act as selective barriers and play an important role in processes such as cellular compartmentalization and industrial-scale chemical and gas purification. The ideal membrane should be as thin as possible to maximize flux, mechanically robust to prevent fracture, and have well-defined pore sizes to increase selectivity. Graphene is an excellent starting point for developing size-selective membranes because of its atomic thickness, high mechanical strength, relative inertness and impermeability to all standard gases. However, pores that can exclude larger molecules but allow smaller molecules to pass through would have to be introduced into the material. Here, we show that ultraviolet-induced oxidative etching can create pores in micrometre-sized graphene membranes, and the resulting membranes can be used as molecular sieves. A pressurized blister test and mechanical resonance are used to measure the transport of a range of gases (H(2), CO(2), Ar, N(2), CH(4) and SF(6)) through the pores. The experimentally measured leak rate, separation factors and Raman spectrum agree well with models based on effusion through a small number of ångstrom-sized pores.

Internal friction peaks observed in explosively deformed polycrystalline Mo, Nb, and Cu

NASA Technical Reports Server (NTRS)

Rieu, G. E.; Grimes, H. H.; Romain, J. P.; Defouquet, J.

1974-01-01

Explosive deformation (50 kbar range) induced, in Cu, Mo and Nb, internal friction peaks identical to those observed after large normal deformation. The variation of the peaks with pressure for Mo and Nb lead to an explanation of these processes in terms of double kink generation in screw and edge dislocations.

From Dot to Ring: The Role of Friction in the Deposition Pattern of a Drying Colloidal Suspension Droplet.

PubMed

Xie, Qingguang; Harting, Jens

2018-05-08

The deposition of particles on a substrate by drying a colloidal suspension droplet is at the core of applications ranging from traditional printing on paper to printable electronics or photovoltaic devices. The self-pinning induced by the accumulation of particles at the contact line plays an important role in the formation of a deposit. In this article, we investigate, both numerically and theoretically, the effect of friction between the particles and the substrate on the deposition pattern. Without friction, the contact line shows a stick-slip behavior and a dotlike deposit is left after the droplet is evaporated. By increasing the friction force, we observe a transition from a dotlike to a ringlike deposit. We propose a theoretical model to predict the effective radius of the particle deposit as a function of the friction force. Our theoretical model predicts a critical friction force when self-pinning happens and the effective radius of deposit increases with increasing friction force, confirmed by our simulation results. Our results can find implications for developing active control strategies for the deposition of drying droplets.

The effect of ion plated silver and sliding friction on tensile stress-induced cracking in aluminum oxide

NASA Technical Reports Server (NTRS)

Sliney, Harold E.; Spalvins, Talivaldis

1991-01-01

A Hertzian analysis of the effect of sliding friction on contact stresses in alumina is used to predict the critical load for crack generation. The results for uncoated alumina and alumina coated with ion plated silver are compared. Friction coefficient inputs to the analysis are determined experimentally with a scratch test instrument employing an 0.2 mm radius diamond stylus. A series of scratches were made at constant load increments on coated and uncoated flat alumina surfaces. Critical loads for cracking are detected by microscopic examination of cross sections of scratches made at various loads and friction coefficients. Acoustic emission (AE) and friction trends were also evaluated as experimental techniques for determining critical loads for cracking. Analytical predictions correlate well with micrographic evidence and with the lowest load at which AE is detected in multiple scratch tests. Friction/load trends are not good indicators of early crack formation. Lubrication with silver films reduced friction and thereby increased the critical load for crack initiation in agreement with analytical predictions.

The effect of ion-plated silver and sliding friction on tensile stress-induced cracking in aluminum oxide

NASA Technical Reports Server (NTRS)

Sliney, Harold E.; Spalvins, Talivaldis

1993-01-01

A Hertzian analysis of the effect of sliding friction on contact stresses in alumina is used to predict the critical load for crack generation. The results for uncoated alumina and alumina coated with ion plated silver are compared. Friction coefficient inputs to the analysis are determined experimentally with a scratch test instrument employing an 0.2 mm radius diamond stylus. A series of scratches were made at constant load increments on coated and uncoated flat alumina surfaces. Critical loads for cracking are detected by microscopic examination of cross sections of scratches made at various loads and friction coefficients. Acoustic emission (AE) and friction trends were also evaluated as experimental techniques for determining critical loads for cracking. Analytical predictions correlate well with micrographic evidence and with the lowest load at which AE is detected in multiple scratch tests. Friction/load trends are not good indicators of early crack formation. Lubrication with silver films reduced friction and thereby increased the critical load for crack initiation in agreement with analytical predictions.

Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

NASA Astrophysics Data System (ADS)

Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

2007-10-01

Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate results show that the etch rate contrast and absolute etch rates are dictated by the Li2SiO3 concentration, which is in turn governed by the (Ag0)x cluster concentration. These results characterize the relationship between the laser exposure and chemical etch rate for Foturan, and permit a more detailed understanding of the photophysical processes that occur in the general class of photostructurable glass ceramic materials. Consequently, these results may also influence the laser processing of other photoactive materials.

Lateral hopping of CO on Cu(111) induced by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Ueba, H.; Ootsuka, Y.; Paulsson, M.; Persson, B. N. J.

2010-09-01

We present a theoretical study of the lateral hopping of a single CO molecule on Cu(111) induced by femtosecond laser pulses by Mehlhorn [Phys. Rev. Lett. 104, 076101 (2010)]10.1103/PhysRevLett.104.076101. Our model assumes an intermode coupling between the CO frustrated translation (FT) and frustrated rotation (FR) modes with a weak and strong electronic friction coupling to hot electrons, respectively, and heat transfer between the FT mode and the substrate phonons. In this model the effective electronic friction coupling of the FT mode depends on the absorbed laser fluence F through the temperature of the FR mode. The calculated hopping yield as a function of F nicely reproduces the nonlinear increase observed above F=4.0J/m2 . It is found that the electronic heating via friction coupling nor the phonon coupling alone cannot explain the experimental result. Both heatings are cooperatively responsible for CO hopping on Cu(111). The electronic heat transfer dominates over the phononic one at high F , where the effective electronic friction coupling becomes larger than the phononic coupling.

Numerical Modeling of Earthquake-Induced Landslide Using an Improved Discontinuous Deformation Analysis Considering Dynamic Friction Degradation of Joints

NASA Astrophysics Data System (ADS)

Huang, Da; Song, Yixiang; Cen, Duofeng; Fu, Guoyang

2016-12-01

Discontinuous deformation analysis (DDA) as an efficient technique has been extensively applied in the dynamic simulation of discontinuous rock mass. In the original DDA (ODDA), the Mohr-Coulomb failure criterion is employed as the judgment principle of failure between contact blocks, and the friction coefficient is assumed to be constant in the whole calculation process. However, it has been confirmed by a host of shear tests that the dynamic friction of rock joints degrades. Therefore, the friction coefficient should be gradually reduced during the numerical simulation of an earthquake-induced rockslide. In this paper, based on the experimental results of cyclic shear tests on limestone joints, exponential regression formulas are fitted for dynamic friction degradation, which is a function of the relative velocity, the amplitude of cyclic shear displacement and the number of its cycles between blocks with an edge-to-edge contact. Then, an improved DDA (IDDA) is developed by implementing the fitting regression formulas and a modified removing technique of joint cohesion, in which the cohesion is removed once the `sliding' or `open' state between blocks appears for the first time, into the ODDA. The IDDA is first validated by comparing with the theoretical solutions of the kinematic behaviors of a sliding block on an inclined plane under dynamic loading. Then, the program is applied to model the Donghekou landslide triggered by the 2008 Wenchuan earthquake in China. The simulation results demonstrate that the dynamic friction degradation of joints has great influences on the runout and velocity of sliding mass. Moreover, the friction coefficient possesses higher impact than the cohesion of joints on the kinematic behaviors of the sliding mass.

Molecular Dynamics Study of Thermally Augmented Nanodroplet Motion on Chemical Energy Induced Wettability Gradient Surfaces.

PubMed

Chakraborty, Monojit; Chowdhury, Anamika; Bhusan, Richa; DasGupta, Sunando

2015-10-20

Droplet motion on a surface with chemical energy induced wettability gradient has been simulated using molecular dynamics (MD) simulation to highlight the underlying physics of molecular movement near the solid-liquid interface including the contact line friction. The simulations mimic experiments in a comprehensive manner wherein microsized droplets are propelled by the surface wettability gradient against forces opposed to motion. The liquid-wall Lennard-Jones interaction parameter and the substrate temperature are varied to explore their effects on the three-phase contact line friction coefficient. The contact line friction is observed to be a strong function of temperature at atomistic scales, confirming their experimentally observed inverse functionality. Additionally, the MD simulation results are successfully compared with those from an analytical model for self-propelled droplet motion on gradient surfaces.

Poroelasticity-driven lubrication in hydrogel interfaces.

PubMed

Reale, Erik R; Dunn, Alison C

2017-01-04

It is widely accepted that hydrogel surfaces are slippery, and have low friction, but dynamic applied stresses alter the hydrogel composition at the interface as water is displaced. The induced osmotic imbalance of compressed hydrogel which cannot swell to equilibrium should drive the resistance to slip against it. This paper demonstrates the driving role of poroelasticity in the friction of hydrogel-glass interfaces, specifically how poroelastic relaxation of hydrogels increases adhesion. We translate the work of adhesion into an effective surface energy density that increases with the duration of applied pressure from 10 to 50 mJ m -2 , as measured by micro-indentation. A model of static friction coefficient is derived from an area-based rules of mixture for the surface energies, and predicts the friction coefficient changes upon initiation of slip. For kinetic friction, the competition between duration of contact and relaxation time is quantified by a contacting Péclet number, Pe C . A single length parameter on the scale of micrometers fits these two models to experimental micro-friction data. These models predict how short durations of applied pressure and faster sliding speeds, do not disrupt interfacial hydration; this prevailing water maintains low friction. At low speeds where interface drainage dominates, the osmotic suction works against slip for higher friction. The prediction of friction coefficients after adhesion characterization by micro-indentation makes use of the interplay between poroelasticity, adhesion, and friction. This approach provides a starting point for prediction of, and design for, hydrogel interfacial friction.

Optical ridge waveguides preserving the thermo-optic features in LiNbO3 crystals fabricated by combination of proton implantation and selective wet etching.

PubMed

Tan, Yang; Chen, Feng

2010-05-24

We report on a new, simple method to fabricate optical ridge waveguides in a z-cut LiNbO3 wafer by using proton implantation and selective wet etching. The measured modal field is well confined in the ridge waveguide region, which is also confirmed by the numerical simulation. With thermal annealing treatment at 400 degrees C, the propagation loss of the ridge waveguides is determined to be as low as approximately 0.9 dB/cm. In addition, the measured thermo-optic coefficients of the waveguides are in good agreement with those of the bulk, suggesting potential applications in integrated photonics.

Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

PubMed

Ahmad, Muthanna; Grime, Geoffrey W

2013-04-01

Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.

Plastic deformation of a magnesium oxide 001-plane surface produced by cavitation

NASA Technical Reports Server (NTRS)

Hattori, S.; Miyoshi, K.; Buckley, D. H.; Okada, T.

1986-01-01

An investigation was conducted to examine plastic deformation of a cleaved single-crystal magnesium oxide 001-plane surface exposed to cavitation. Cavitation damage experiments were carried out in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (2 mm) to the surface of the cleaved specimen. The dislocation-etch-pit patterns induced by cavitation were examined and compared with that of microhardness indentations. The results revealed that dislocation-etch-pit patterns around hardness indentations contain both screw and edge dislocations, while the etch-pit patterns on the surface exposed to cavitation contain only screw dislocations. During cavitation, deformation occurred in a thin surface layer, accompanied by work-hardening of the ceramic. The row of screw dislocations underwent a stable growth, which was analyzed crystallographically.

Computational Methods for Nonlinear Dynamics Problems in Solid and Structural Mechanics: Models of Dynamic Frictional Phenomena in Metallic Structures.

DTIC Science & Technology

1986-03-31

Martins, J.A.C. and Campos , L.T. [1986], "Existence and Local Uniqueness of Solutions to Contact Problems in Elasticity with Nonlinear Friction...noisy and ttoubl esome vibt.t4ons. If the sound generated by the friction-induced oscillations of Rviolin strings may be the delight of all music lovers...formulation. See 0den and Martins - [1985] and Rabier, Martins, Oden and Campos [1986]. - It is now simple to show, in a 6o’uman manner, that, for

[Antibacterial effect of self-etching adhesive systems on Streptococcus mutans].

PubMed

Zhang, Lu; Yuan, Chong-yang; Tian, Fu-cong; Wang, Xiao-yan; Gao, Xue-jun

2016-02-18

To investigate the antibacterial effect of different self-etching adhesive systems against Streptococcus mutans (S. mutans). Six reagents Clearfil(TM) SE Bond primer (SP), Clearfil(TM) SE Bond adhesive (SA),Clearfil(TM) Protect Bond primer (PP), which contained antibacterial monomer methacryloyloxydodecylpyridinium bromide (MDPB), ClearfilTM Protect Bond adhesive (PA), positive control chlorhexidine acetate [CHX, 1% (mass fraction)], and negative control phosphate buffer solution (PBS) were selected. They were mixed with S. mutans for 30 s respectively, then colony-forming units (CFU) were counted after incubated for 48 h on brain heart infusion (BHI) agar medium. The 6 reagents were applied to the sterile paper discs, and distributed onto the BHI agar medium with S. mutans and incubated for 24 h, then the inhibition zones were observed. CHX, PBS, PP, and SP were added on the dentin with artificial caries induced by S. mutans and kept for 30 s, then confocal laser scanning microscope (CLSM) was used to observe the live and dead bacteria after staining. The ratio of live to dead bacteria was calculated. PP+PA and SP+SA were applied on the dentin according to the manual and light cured. S. mutans were incubated on the samples for 2 h, ultrasonically treated and incubated on BHI agar medium for 48 h, then CFU was counted. The data were analyzed by non-parametric analysis and one-way ANOVA. Compared with PBS, the PP, SP, PA, SA and CHX showed the antibacterial effect on free S. mutans (P<0.05); SP and PP showed stronger antibacterial effect than PA, SA and CHX (P<0.05). CHX, SP and PP presented inhibition zones, while PBS, SA and PA did not. Compared with PBS, the CHX, SP and PP could lower the ratio of the live to dead bacteria significantly (P<0.05). Cured self-etching adhesive systems did not show any antibacterial effect on the free S. mutans. The primer of self-etching adhesives Clearfil(TM) SE Bond and Clearfil(TM) Protect Bond showed significant antibacterial effect on free and attached S. mutans. The adhesive only showed antibacterial effect on free S. mutans before light-cured polymerization. After being cured, the self-etching adhesive systems did not show antibacterial effect anymore.

Development of optimized, graded-permeability axial groove heat pipes

NASA Technical Reports Server (NTRS)

Kapolnek, Michael R.; Holmes, H. Rolland

1988-01-01

Heat pipe performance can usually be improved by uniformly varying or grading wick permeability from end to end. A unique and cost effective method for grading the permeability of an axial groove heat pipe is described - selective chemical etching of the pipe casing. This method was developed and demonstrated on a proof-of-concept test article. The process improved the test article's performance by 50 percent. Further improvement is possible through the use of optimally etched grooves.

Transduction channels' gating can control friction on vibrating hair-cell bundles in the ear.

PubMed

Bormuth, Volker; Barral, Jérémie; Joanny, Jean-François; Jülicher, Frank; Martin, Pascal

2014-05-20

Hearing starts when sound-evoked mechanical vibrations of the hair-cell bundle activate mechanosensitive ion channels, giving birth to an electrical signal. As for any mechanical system, friction impedes movements of the hair bundle and thus constrains the sensitivity and frequency selectivity of auditory transduction. Friction is generally thought to result mainly from viscous drag by the surrounding fluid. We demonstrate here that the opening and closing of the transduction channels produce internal frictional forces that can dominate viscous drag on the micrometer-sized hair bundle. We characterized friction by analyzing hysteresis in the force-displacement relation of single hair-cell bundles in response to periodic triangular stimuli. For bundle velocities high enough to outrun adaptation, we found that frictional forces were maximal within the narrow region of deflections that elicited significant channel gating, plummeted upon application of a channel blocker, and displayed a sublinear growth for increasing bundle velocity. At low velocity, the slope of the relation between the frictional force and velocity was nearly fivefold larger than the hydrodynamic friction coefficient that was measured when the transduction machinery was decoupled from bundle motion by severing tip links. A theoretical analysis reveals that channel friction arises from coupling the dynamics of the conformational change associated with channel gating to tip-link tension. Varying channel properties affects friction, with faster channels producing smaller friction. We propose that this intrinsic source of friction may contribute to the process that sets the hair cell's characteristic frequency of responsiveness.

Transduction channels’ gating can control friction on vibrating hair-cell bundles in the ear

PubMed Central

Bormuth, Volker; Barral, Jérémie; Joanny, Jean-François; Jülicher, Frank; Martin, Pascal

2014-01-01

Hearing starts when sound-evoked mechanical vibrations of the hair-cell bundle activate mechanosensitive ion channels, giving birth to an electrical signal. As for any mechanical system, friction impedes movements of the hair bundle and thus constrains the sensitivity and frequency selectivity of auditory transduction. Friction is generally thought to result mainly from viscous drag by the surrounding fluid. We demonstrate here that the opening and closing of the transduction channels produce internal frictional forces that can dominate viscous drag on the micrometer-sized hair bundle. We characterized friction by analyzing hysteresis in the force–displacement relation of single hair-cell bundles in response to periodic triangular stimuli. For bundle velocities high enough to outrun adaptation, we found that frictional forces were maximal within the narrow region of deflections that elicited significant channel gating, plummeted upon application of a channel blocker, and displayed a sublinear growth for increasing bundle velocity. At low velocity, the slope of the relation between the frictional force and velocity was nearly fivefold larger than the hydrodynamic friction coefficient that was measured when the transduction machinery was decoupled from bundle motion by severing tip links. A theoretical analysis reveals that channel friction arises from coupling the dynamics of the conformational change associated with channel gating to tip-link tension. Varying channel properties affects friction, with faster channels producing smaller friction. We propose that this intrinsic source of friction may contribute to the process that sets the hair cell’s characteristic frequency of responsiveness. PMID:24799674

A Dry-Etch Process for Low Temperature Superconducting Transition Edge Sensors for Far Infrared Bolometer Arrays

NASA Technical Reports Server (NTRS)

Allen, Christine A.; Chervenak, James A.; Hsieh, Wen-Ting; McClanahan, Richard A.; Miller, Timothy M.; Mitchell, Robert; Moseley, S. Harvey; Staguhn, Johannes; Stevenson, Thomas R.

2003-01-01

The next generation of ultra-low power bolometer arrays, with applications in far infrared imaging, spectroscopy and polarimetry, utilizes a superconducting bilayer as the sensing element to enable SQUID multiplexed readout. Superconducting transition edge sensors (TES s) are being produced with dual metal systems of superconductinghormal bilayers. The transition temperature (Tc) is tuned by altering the relative thickness of the superconductor with respect to the normal layer. We are currently investigating MoAu and MoCu bilayers. We have developed a dry-etching process for MoAu TES s with integrated molybdenum leads, and are working on adapting the process to MoCu. Dry etching has the advantage over wet etching in the MoAu system in that one can achieve a high degree of selectivity, greater than 10, using argon ME, or argon ion milling, for patterning gold on molybdenum. Molybdenum leads are subsequently patterned using fluorine plasma.. The dry-etch technique results in a smooth, featureless TES with sharp sidewalls, no undercutting of the Mo beneath the normal metal, and Mo leads with high critical current. The effects of individual processing parameters on the characteristics of the transition will be reported.

Tribological Properties of Structural Ceramics

NASA Technical Reports Server (NTRS)

Buckley, Donald H.; Miyoshi, Kazuhisa

1987-01-01

Paper discusses tribological properties of structural ceramics. Function of tribological research is to bring about reduction in adhesion, friction, and wear of mechanical components; to prevent failures; and to provide long, reliable component life, through judicious selection of materials, operating parameters, and lubricants. Paper reviews adhesion, friction, wear, and lubrication of ceramics; anisotropic friction and wear behavior; and effects of surface films and interactions between ceramics and metals. Analogies with metals are made. Both oxide and nonoxide ceramics, including ceramics used as high temperature lubricants, are dicussed.

Controlled, prospective, randomized, clinical split-mouth evaluation of partial ceramic crowns luted with a new, universal adhesive system/resin cement: results after 18 months.

PubMed

Vogl, Vanessa; Hiller, Karl-Anton; Buchalla, Wolfgang; Federlin, Marianne; Schmalz, Gottfried

2016-12-01

A new universal adhesive with corresponding luting composite was recently marketed which can be used both, in a self-etch or in an etch-and-rinse mode. In this study, the clinical performance of partial ceramic crowns (PCCs) inserted with this adhesive and the corresponding luting material used in a self-etch or selective etch approach was compared with a self-adhesive universal luting material. Three PCCs were placed in a split-mouth design in 50 patients. Two PCCs were luted with a combination of a universal adhesive/resin cement (Scotchbond Universal/RelyX Ultimate, 3M ESPE) with (SB+E)/without (SB-E) selective enamel etching. Another PCC was luted with a self-adhesive resin cement (RelyX Unicem 2, 3M ESPE). Forty-eight patients were evaluated clinically according to FDI criteria at baseline and 6, 12 and 18 months. For statistical analyses, the chi-square test (α = 0.05) and Kaplan-Meier analysis were applied. Clinically, no statistically significant differences between groups were detected over time. Within groups, clinically significant increase for criterion "marginal staining" was detected for SB-E over 18 months. Kaplan-Meier analysis revealed significantly higher retention rates for SB+E (97.8 %) and SB-E (95.6 %) in comparison to RXU2 (75.6 %). The 18-month clinical performance of a new universal adhesive/composite combination showed no differences with respect to bonding strategy and may be recommended for luting PCCs. Longer-term evaluation is needed to confirm superiority of SB+E over SB-E. At 18 months, the new multi-mode adhesive, Scotchbond Universal, showed clinically reliable results when used for luting PCCs.

In vivo cation exchange in quantum dots for tumor-specific imaging.

PubMed

Liu, Xiangyou; Braun, Gary B; Qin, Mingde; Ruoslahti, Erkki; Sugahara, Kazuki N

2017-08-24

In vivo tumor imaging with nanoprobes suffers from poor tumor specificity. Here, we introduce a nanosystem, which allows selective background quenching to gain exceptionally tumor-specific signals. The system uses near-infrared quantum dots and a membrane-impermeable etchant, which serves as a cation donor. The etchant rapidly quenches the quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions released from the quantum dots. The quantum dots are intravenously delivered into orthotopic breast and pancreas tumors in mice by using the tumor-penetrating iRGD peptide. Subsequent etching quenches excess quantum dots, leaving a highly tumor-specific signal provided by the intact quantum dots remaining in the extravascular tumor cells and fibroblasts. No toxicity is noted. The system also facilitates the detection of peritoneal tumors with high specificity upon intraperitoneal tumor targeting and selective etching of excess untargeted quantum dots. In vivo cation exchange may be a promising strategy to enhance specificity of tumor imaging.The imaging of tumors in vivo using nanoprobes has been challenging due to the lack of sufficient tumor specificity. Here, the authors develop a tumor-specific quantum dot system that permits in vivo cation exchange to achieve selective background quenching and high tumor-specific imaging.

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Veillerot, M.; Prévitali, B.

2017-10-01

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

NASA Astrophysics Data System (ADS)

Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

2017-10-01

Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma-surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces during etching (normal ion incidence) and formation of surface ripples by plasma etching (off-normal ion incidence) are also presented and discussed in this context.

Estimation of internal friction angle of subduction zone in northeast of Japan by using seismic focal mechanisms

NASA Astrophysics Data System (ADS)

Miyakawa, A.; Sato, K.; Otsubo, M.

2017-12-01

Physical properties, such as friction angle of the material, is important to understand the interplate earthquake of a subduction zone. Coulomb wedge model (Davis et al., 1983, JGR) is successfully revealed the relationship between a geometry of an accretionary wedge in a subduction zone and the physical properties of the material composing the accretionary wedge (e.g. Dahlen, 1984, JGR). An internal friction angle of the wedge and the frictional strength of the plate boundary fault control the wedge angle according to the Coulomb wedge model. However, the internal friction angle of the wedge and the frictional strength of the plate boundary fault are hard to estimate. Many previous works assumed the internal friction angle of the wedge on the basis of the laboratory experiments. Then, the frictional strength of the plate boundary fault, which is usually most interested, were evaluated from the observed wedge angle and the assumed internal friction angle of the wedge. Consequently, we should be careful of the selection of the internal friction angle of the wedge, otherwise, the uncertain an inappropriate internal friction angle may mislead the frictional strength of the plate boundary fault. In this study, we employed the newly developed technique to evaluate the internal friction angle of the wedge from the earthquake focal mechanisms occurred in the wedge along Japan Trench, northeast Japan. We used 650 earthquake mechanisms determined by NIED, Japan for the stress and friction coefficient inversion. The stress and friction coefficient inversion method is modified to handle the earthquake focal mechanisms from a computerized method to estimate the friction coefficient from the orientation distribution of faults (Sato, 2016, JSG). Finally, we obtained 25 degrees of internal friction angle of the wedge from the inversion. This value of friction angle is lower than usually assumed internal friction angle (30 degrees) (Byerlee, 1978, PAGEOPH). This lower internal friction angle leads to lower frictional strength of plate boundary fault ( 0.35) according to the Coulomb wedge model. These constrained physical parameters can contribute to understanding the interplate earthquake at each subduction zones.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography

NASA Astrophysics Data System (ADS)

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-01

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography.

PubMed

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-17

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Some aerodynamic considerations related to wind tunnel model surface definition

NASA Technical Reports Server (NTRS)

Gloss, B. B.

1980-01-01

The aerodynamic considerations related to model surface definition are examined with particular emphasis in areas of fabrication tolerances, model surface finish, and orifice induced pressure errors. The effect of model surface roughness texture on skin friction is also discussed. It is shown that at a given Reynolds number, any roughness will produce no skin friction penalty.

Effects of roughness height, pressure and streamwise distance on stress profiles in the inner part of turbulent boundary layer over super-hydrophobic surfaces

NASA Astrophysics Data System (ADS)

Ling, Hangjian; Katz, Joseph; Srinivasan, Siddarth; McKinley, Gareth; Golovin, Kevin; Tuteja, Anish; Pillutla, Venkata; Abhijeet, Abhijeet; Choi, Wonjae

2016-11-01

Digital holographic microscopy is used for measuring the mean velocity and stress in the inner part of turbulent boundary layers over sprayed or etched super-hydrophobic surfaces (SHSs). The slip velocity and wall friction are calculated directly from the mean velocity and its gradient along with the Reynolds shear stress at the top of SHSs "roughness". Effects of the normalized rms roughness height krms+, facility pressure p and streamwise distance x from the beginning of SHSs on mean flow are examined. For krms+<1 and pkrms / σ <1 (σ is surface tension), the SHSs show 10-28% wall friction reduction, 15-30% slip velocity and λ+ = 3-10 slip length. Increasing Reynolds number and/or krms to establish krms+>1, and increasing p to achieve pkrms / σ >1 suppress the drag reduction, as roughness effects and associated near wall Reynolds stress increase. When the roughness effect is not dominant, the measurements agree with previous theoretical predictions of the relationships between drag reduction and slip velocity. The significance of spanwise slip relative to streamwise slip varies with the SHSs texture. Transitions from a smooth wall to a SHS involve overshoot of Reynolds stress and undershoot of viscous stress, trends that diminish with x. Sponsored by ONR.

The frequency response of dynamic friction: Enhanced rate-and-state models

NASA Astrophysics Data System (ADS)

Cabboi, A.; Putelat, T.; Woodhouse, J.

2016-07-01

The prediction and control of friction-induced vibration requires a sufficiently accurate constitutive law for dynamic friction at the sliding interface: for linearised stability analysis, this requirement takes the form of a frictional frequency response function. Systematic measurements of this frictional frequency response function are presented for small samples of nylon and polycarbonate sliding against a glass disc. Previous efforts to explain such measurements from a theoretical model have failed, but an enhanced rate-and-state model is presented which is shown to match the measurements remarkably well. The tested parameter space covers a range of normal forces (10-50 N), of sliding speeds (1-10 mm/s) and frequencies (100-2000 Hz). The key new ingredient in the model is the inclusion of contact stiffness to take into account elastic deformations near the interface. A systematic methodology is presented to discriminate among possible variants of the model, and then to identify the model parameter values.

Semi-active friction damper for buildings subject to seismic excitation

NASA Astrophysics Data System (ADS)

Mantilla, Juan S.; Solarte, Alexander; Gomez, Daniel; Marulanda, Johannio; Thomson, Peter

2016-04-01

Structural control systems are considered an effective alternative for reducing vibrations in civil structures and are classified according to their energy supply requirement: passive, semi-active, active and hybrid. Commonly used structural control systems in buildings are passive friction dampers, which add energy dissipation through damping mechanisms induced by sliding friction between their surfaces. Semi-Active Variable Friction Dampers (SAVFD) allow the optimum efficiency range of friction dampers to be enhanced by controlling the clamping force in real time. This paper describes the development and performance evaluation of a low-cost SAVFD for the reduction of vibrations of structures subject to earthquakes. The SAVFD and a benchmark structural control test structure were experimentally characterized and analytical models were developed and updated based on the dynamic characterization. Decentralized control algorithms were implemented and tested on a shaking table. Relative displacements and accelerations of the structure controlled with the SAVFD were 80% less than those of the uncontrolled structure

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nouri, Lamia; Possémé, Nicolas; Landis, Stéfan; Milesi, Frédéric; Gaillard, Frédéric-Xavier

2017-04-01

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration's requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures. In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that "infinite" selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results. The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Strain-induced friction anisotropy between graphene and molecular liquids

NASA Astrophysics Data System (ADS)

Liao, Meng; To, Quy-Dong; Léonard, Céline; Monchiet, Vincent; Vo, Van-Hoang

2017-01-01

In this paper, we study the friction behavior of molecular liquids with anisotropically strained graphene. Due to the changes of lattice and the potential energy surface, the friction is orientation dependent and can be computed by tensorial Green-Kubo formula. Simple quantitative estimations are also proposed for the zero-time response and agree reasonably well with the molecular dynamics results. From simulations, we can obtain the information of structures, dynamics of the system, and study the influence of strain and molecular shapes on the anisotropy degree. It is found that unilateral strain can increase friction in all directions but the strain direction is privileged. Numerical evidences also show that nonspherical molecules are more sensitive to strain and give rise to more pronounced anisotropy effects.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Collective evolution of submicron hillocks during the early stages of anisotropic alkaline wet chemical etching of Si(1 0 0) surfaces

NASA Astrophysics Data System (ADS)

Sana, P.; Vázquez, Luis; Cuerno, Rodolfo; Sarkar, Subhendu

2017-11-01

We address experimentally the large-scale dynamics of Si(1 0 0) surfaces during the initial stages of anisotropic wet (KOH) chemical etching, which are characterized through atomic force microscopy. These systems are known to lead to the formation of characteristic pyramids, or hillocks, of typical sizes in the nanometric/micrometer scales, thus with the potential for a large number of applications that can benefit from the nanotexturing of Si surfaces. The present pattern formation process is very strongly disordered in space. We assess the space correlations in such a type of rough surface and elucidate the existence of a complex and rich morphological evolution, featuring at least three different regimes in just 10 min of etching. Such a complex time behavior cannot be consistently explained within a single formalism for dynamic scaling. The pyramidal structure reveals itself as the basic morphological motif of the surface throughout the dynamics. A detailed analysis of the surface slope distribution with etching time reveals that the texturing process induced by the KOH etching is rather gradual and progressive, which accounts for the dynamic complexity. The various stages of the morphological evolution can be accurately reproduced by computer-generated surfaces composed by uncorrelated pyramidal structures. To reach such an agreement, the key parameters are the average pyramid size, which increases with etching time, its distribution and the surface coverage by the pyramidal structures.

Anisotropic pyrochemical microetching of poly(tetrafluoroethylene) initiated by synchrotron radiation-induced scission of molecule bonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamaguchi, Akinobu, E-mail: yamaguti@lasti.u-hyogo.ac.jp, E-mail: utsumi@lasti.u-hyogo.ac.jp; Kido, Hideki; Utsumi, Yuichi, E-mail: yamaguti@lasti.u-hyogo.ac.jp, E-mail: utsumi@lasti.u-hyogo.ac.jp

2016-02-01

We developed a process for micromachining polytetrafluoroethylene (PTFE): anisotropic pyrochemical microetching induced by synchrotron X-ray irradiation. X-ray irradiation was performed at room temperature. Upon heating, the irradiated PTFE substrates exhibited high-precision features. Both the X-ray diffraction peak and Raman signal from the irradiated areas of the substrate decreased with increasing irradiation dose. The etching mechanism is speculated as follows: X-ray irradiation caused chain scission, which decreased the number-average degree of polymerization. The melting temperature of irradiated PTFE decreased as the polymer chain length decreased, enabling the treated regions to melt at a lower temperature. The anisotropic pyrochemical etching process enabledmore » the fabrication of PTFE microstructures with higher precision than simultaneously heating and irradiating the sample.« less

Optical tweezers reveal force plateau and internal friction in PEG-induced DNA condensation.

PubMed

Ojala, Heikki; Ziedaite, Gabija; Wallin, Anders E; Bamford, Dennis H; Hæggström, Edward

2014-03-01

The simplified artificial environments in which highly complex biological systems are studied do not represent the crowded, dense, salty, and dynamic environment inside the living cell. Consequently, it is important to investigate the effect of crowding agents on DNA. We used a dual-trap optical tweezers instrument to perform force spectroscopy experiments at pull speeds ranging from 0.3 to 270 μm/s on single dsDNA molecules in the presence of poly(ethylene glycol) (PEG) and monovalent salt. PEG of sizes 1,500 and 4,000 Da condensed DNA, and force-extension data contained a force plateau at approximately 1 pN. The level of the force plateau increased with increasing pull speed. During slow pulling the dissipated work increased linearly with pull speed. The calculated friction coefficient did not depend on amount of DNA incorporated in the condensate, indicating internal friction is independent of the condensate size. PEG300 had no effect on the dsDNA force-extension curve. The force plateau implies that condensation induced by crowding agents resembles condensation induced by multivalent cations.

Evaluation of Skin Friction Drag for Liner Applications in Aircraft

NASA Technical Reports Server (NTRS)

Gerhold, Carl H.; Brown, Martha C.; Jasinski, Christopher M.

2016-01-01

A parameter that is gaining significance in the evaluation of acoustic liner performance is the skin friction drag induced by air flow over the liner surface. Estimates vary widely regarding the amount of drag the liner induces relative to a smooth wall, from less than a 20% increase to nearly 100%, and parameters such as face sheet perforate hole diameter, percent open area, and sheet thickness are expected to figure prominently in the skin friction drag. Even a small increase in liner drag can impose an economic penalty, and current research is focused on developing 'low drag' liner concepts, with the goal being to approach the skin friction drag of a smooth wall. The issue of skin friction drag takes on greater significance as airframe designers investigate the feasibility of putting sound absorbing liners on the non-lifting surfaces of the wings and fuselage, for the purpose of reducing engine noise reflected and scattered toward observers on the ground. Researchers at the NASA Langley Research Center have embarked on investigations of liner skin friction drag with the aims of: developing a systematic drag measurement capability, establishing the drag of current liners, and developing liners that produce reduced drag without compromising acoustic performance. This paper discusses the experimental procedures that have been developed to calculate the drag coefficient based on the change in momentum thickness and the companion research program being carried out to measure the drag directly using a force balance. Liner samples that are evaluated include a solid wall with known roughness and conventional liners with perforated facesheets of varying hole diameter and percent open area.

Prehension Synergies in the Grasps With Complex Friction Patterns: Local Versus Synergic Effects and the Template Control

PubMed Central

Niu, Xun; Latash, Mark L.; Zatsiorsky, Vladimir M.

2010-01-01

We studied adjustments of digit forces to changes in the friction. The subjects held a handle statically in a three-digit grasp. The friction under each digit was either high or low, resulting in eight three-element friction sets (such grasps were coined the grasps with complex friction pattern). The total load was also manipulated. It was found that digit forces were adjusted not only to the supported load and local friction, but also to friction at other digits (synergic effects). When friction under a digit was low, its tangential force decreased and the normal force increased (local effects). The synergic effects were directed to maintain the equilibrium of the handle. The relation between the individual digit forces and loads agreed with the triple-product model: fin=ki(2)ki(1)L, where fin is normal force of digit i, L is the load (newtons), ki(1) is a dimensionless coefficient representing sharing the total tangential force among the digits (Σki(1)=1.0), and ki(2) is a coefficient representing the relation between the tangential and normal forces of digit i (the overall friction equivalent, OFE). At each friction set, the central controller selected the grasping template—a three-element array of ki(2)ki(1) products—and then scaled the template with the load magnitude. PMID:17493928

Comparative evaluation of self-etching primers and phosphoric acid effectiveness on composite to enamel bond: an in vitro study.

PubMed

Patil, Basanagouda S; Rao, Bk Raghavendra; Sharathchandra, Sm; Hegde, Reshma; Kumar, G Vinay

2013-09-01

The aim of the present study was to investigate the effectiveness of the one total-etch self-priming adhesive, one two-step self-etching primer adhesive, and one 'all-in-one' self-etching adhesive system on the adhesion of a resin composite to enamel. Thirty-six freshly extracted human mandibular molars were selected for this study. A fat area about 5 mm in diameter was created on the exposed mesial surface of enamel of each tooth by moist grinding with 320, 420 and 600 grit silicon carbide paper. Twelve teeth were randomly assigned into three groups. In group 1, Adper Easy One (3M ESPE), a one step self-etching primer adhesive was applied and light curing unit for 10 seconds. In group 2, Adper SE Plus, a two-step self-etching primer with bottle A containing the aqueous primer and bottle B containing the acidic adhesive was applied and light cured for 10 seconds. Group 3 (control)-etchant 37% phosphoric acid is applied to the surface for 15 seconds and rinsed with water and air dried and adhesive (single bond 2) is applied to the surface and tube is placed and light cured for 20 seconds. Composite material (Z350) was placed in the tube and light cured for 40 seconds in all the groups. Bond strength testing was done using universal testing machine at the enamel-composite interface. The debonded enamel surface was evaluated in stereomicroscope to assess the cohesive, adhesive or mixed fracture. Data was statistically analyzed by one way analysis of variance (ANOVA). Group 1 performed least among all groups with a mean score of 19.46 MPa. Group 2 had a mean score of 25.67 MPa. Group 3 had a mean score of 27.16 MPa. Under the conditions of this in vitro study, the bond strength values of the two-step self-etching primer systems tested were similar to the total-etch. And, one step self-etching primers have lower bond strength compared to the total-etch.

Effect of thermal aging on the tensile bond strength at reduced areas of seven current adhesives.

PubMed

Baracco, Bruno; Fuentes, M Victoria; Garrido, Miguel A; González-López, Santiago; Ceballos, Laura

2013-07-01

The purpose of this study was to determine the micro-tensile bond strength (MTBS) to dentin of seven adhesive systems (total and self-etch adhesives) after 24 h and 5,000 thermocycles. Dentin surfaces of human third molars were exposed and bonded with two total-etch adhesives (Adper Scotchbond 1 XT and XP Bond), two two-step self-etch adhesives (Adper Scotchbond SE and Filtek Silorane Adhesive System) and three one-step self-etch adhesives (G-Bond, Xeno V and Bond Force). All adhesive systems were applied following manufacturers' instructions. Composite buildups were constructed and the bonded teeth were then stored in water (24 h, 37 °C) or thermocycled (5,000 cycles) before being sectioned and submitted to MTBS test. Two-way ANOVA and subsequent comparison tests were applied at α = 0.05. Characteristic de-bonded specimens were analyzed using scanning electron microscopy (SEM). After 24 h water storage, MTBS values were highest with XP Bond, Adper Scotchbond 1 XT, Filtek Silorane Adhesive System and Adper Scotchbond SE and lowest with the one-step self-etch adhesives Bond Force, Xeno V and G-Bond. After thermocycling, MTBS values were highest with XP Bond, followed by Filtek Silorane Adhesive System, Adper Scotchbond SE and Adper Scotchbond 1 XT and lowest with the one-step self-etch adhesives Bond Force, Xeno V and G-Bond. Thermal aging induced a significant decrease in MTBS values with all adhesives tested. The resistance of resin-dentin bonds to thermal-aging degradation was material dependent. One-step self-etch adhesives obtained the lowest MTBS results after both aging treatments, and their adhesive capacity was significantly reduced after thermocycling.

Digital Photonic Production of Micro Structures in Glass by In-Volume Selective Laser-Induced Etching using a High Speed Micro Scanner

NASA Astrophysics Data System (ADS)

Gottmann, Jens; Hermans, Martin; Ortmann, Jürgen

Digital photonic production of 3D microfluidic devices and assembled micro mechanics inside fused silica glass is carried out using ISLE directly from digital CAD data. To exploit the potential productivity of new high average power fs-lasers >150 W a modular high speed scanning system has been developed. Acousto-optical beam deflection, galvo-scanners and translation stages are controlled by CAM software. Using a lens with 10 mm focal length a focus radius of 1 μm is scanned with a velocity of 12 m/s on 400 μm track radius enabling the up-scaling of the ISLE- process using fs-laser radiation with up to 30 W.

Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

PubMed Central

2013-01-01

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved. PMID:24090268

Optical Manipulation of Symbiotic Chlorella in Paramecium Bursaria Using a Fiber Axicon Microlens

NASA Astrophysics Data System (ADS)

Taguchi, K.; Hirota, S.; Nakayama, H.; Kunugihara, D.; Mihara, Y.

2012-03-01

In this paper, chemically etched axicon fiber was proposed for laser trapping of symbiotic chlorella from paramecium bursaria. We fabricated axicon micro lenses on a single-mode bare optical fiber by selective chemical etching technique. The laser beam from fiber axicon microlens was strongly focused and optical forces were sufficient to move a symbiotic chlorella. From experimental results, it was found that our proposed fiber axicon microlens was a promising tool for cell trapping without physical contact.

Friction Stir Welding of Steel Alloys

NASA Technical Reports Server (NTRS)

Ding, R. Jeffrey; Munafo, Paul M. (Technical Monitor)

2001-01-01

The friction stir welding process has been developed primarily for the welding of aluminum alloys. Other higher melting allows such, as steels are much more difficult to join. Special attention must be given to pin tool material selection and welding techniques. This paper addresses the joining of steels and other high melting point materials using the friction stir welding process. Pin tool material and welding parameters will be presented. Mechanical properties of weldments will also be presented. Significance: There are many applications for the friction stir welding process other than low melting aluminum alloys. The FSW process can be expanded for use with high melting alloys in the pressure vessel, railroad and ship building industries.

Study of Etching Pits in a Large-grain Single Cell Bulk Niobium Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xin; Ciovati, Gianluigi; Reece, Charles E.

2009-11-01

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitativelymore » low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information on the depth and size of the pits. In addition, a survey of the samples by energy dispersive X-ray analysis (EDX) did not show any significant contamination of the samples surface.« less