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Sample records for front-illuminated photodiode array

  1. Integrated avalanche photodiode arrays

    DOEpatents

    Harmon, Eric S.

    2015-07-07

    The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

  2. Enhanced performance of reversely transferred, doubly open-ended TiO2 nanotube arrays for front-illuminated dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyunsoo; Lee, Soo-Yong; Kim, Jae-Hong; Ahn, Kwang-Soon; Kang, Soon-Hyung

    2016-01-01

    Doubly open-ended conventional TiO2 nanotube arrays (Type I) and nanoporous-layer-covered nanotube arrays (Type II) were transferred to transparent fluorine-doped tin oxides (FTOs) for front-illuminated dye-sensitized solar cells (DSSCs). FTO/Type II exhibited a long electron lifetime ( τ e ) and rapid electron transport compared to FTO/Type I because of the reduced surface defect-state-mediated recombination rate. In particular, Type II transferred reversely to the FTO (FTO/Type II-rev) had beneficial geometric effects, leading to a decrease in pore size from the bottom to the top and a nanoporous TiO2 thin bottom layer. These enabled more effective light scattering near the FTO and facilitated lateral electron movement toward the FTO, leading to a shortened electron pathway and a reduced recombination rate. The significantly enhanced electron lifetime and the shortened electron transit time of the FTO/Type II-rev improved the charge collection efficiency significantly. Furthermore, the enhanced light scattering increased the light harvesting efficiency. These beneficial geometric effects of FTO/Type II-rev contributed to the greatly enhanced overall cell efficiency (7.61%) of the DSSC compared to the DSSCs with FTO/Type I (5.27%) and FTO/Type II (6.65%).

  3. Optical Demonstrations with a Scanning Photodiode Array.

    ERIC Educational Resources Information Center

    Turman, Bobby N.

    1980-01-01

    Describes the photodiode array and the electrical connections necessary for it. Also shows a few of the optical demonstration possibilities-shadowgraphs for measuring small objects, interference and diffraction effects, angular resolution of an optical system, and a simple spectrometer. (Author/DS)

  4. Avalanche Photodiode Arrays for Optical Communications Receivers

    NASA Technical Reports Server (NTRS)

    Srinivasan, M.; Vilnrotter, V.

    2001-01-01

    An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

  5. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  6. Interference effects in reticon photodiode array detectors.

    PubMed

    Mount, G H; Sanders, R W; Brault, J W

    1992-03-01

    A detector system incorporating the Reticon RL1024S photodiode array has been constructed at the National Oceanic and Atmospheric Administration Aeronomy Laboratory as part of a double spectrograph to be used to study the Earth's atmosphere from ground-based and aircraft-based platforms. To determine accurately the abundances of atmospheric trace gases, this new system must be able to measure spectral absorptions as small as 0.02%. The detector, manufactured by EG&G Reticon, exhibits superior signal-to-noise characteristics at the light levels characteristic of scattered skylights, but interference in the passivating layer (a thin layer of SiO(2) that is deposited during the manufacture to protect the silicon active area from water vapor) causes major problems in achieving the required precision. The mechanism of the problems and the solution we have implemented are described in detail.

  7. Quality assurance using a photodiode array.

    PubMed

    Balderson, M J; Spencer, D P; Nygren, I; Brown, D W

    2011-01-31

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In the present paper, we describe the development of a novel device that enables precise and automated measurement of geometric parameters for the purpose of improving initial setup accuracy, and for standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Measurements that demonstrate the utility of the device are also presented. Using the device, we show that the radiation light field congruence for both 6 and 15 MV beams is within 1.3 mm. The maximum measured disagreement between radiation field edges and light field edges was 1.290 ± 0.002 mm, while the smallest disagreement between the light field and radiation field edge was 0.016 ± 0.003 mm. Because measurements are automated, ambiguities resulting from interobserver variability are removed, greatly improving the reproducibility of measurements across observers. We expect the device to find use in consistency measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, or as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  8. High-power flip-chip mounted photodiode array.

    PubMed

    Cross, Allen S; Zhou, Qiugui; Beling, Andreas; Fu, Yang; Campbell, Joe C

    2013-04-22

    Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.

  9. Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

  10. High Density HGCDTE Avalanche Photodiode Array Performance

    DTIC Science & Technology

    1999-08-01

    Laboratory for the Physical Sciences 8050 Greenmead Drive College Park, MD. 20740 W. Trussell, J. Nettleton , A. Hutchinson, and D. Barr Night Vision and...Electronic Sensors Directorate AMSEL RD NV LPD LT Ft. Belvoir, VA 22060-5806 1 This Work Supported in Part by NVESD Laser Technology Branch Contract...advantageous in the development of APD arrays for 3D LADAR imaging applications. HCT APDs show promise for laser range finders with increased range and 3D

  11. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    NASA Technical Reports Server (NTRS)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  12. UV photodetectors, focal plane arrays, and avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan

    2007-12-01

    The study of III-Nitride based optoelectronics devices is a maturing field, but there are still many underdeveloped areas in which to make a contribution of new and original research. This work specifically targets the goals of realizing high-efficiency back-illuminated solar-blind photodetectors, solar-blind focal plane arrays, and visible- and solar-blind Avalanche photodiodes. Achieving these goals has required systematic development of the material growth and characterization, device modeling and design, device fabrication and processing, and the device testing and qualification. This work describes the research conducted and presents relevant devices results. The AlGaN material system has a tunable direct bandgap that is ideally suited to detection of ultraviolet light, however this material system suffers from several key issues, making realization of high-efficiency photodetectors difficult: large dislocation densities, low n-type and p-type doping efficiency, and lattice and thermal expansion mismatches leading to cracking of the material. All of these problems are exacerbated by the increased aluminum compositions necessary in back-illuminated and solar-blind devices. Overcoming these obstacles has required extensive development and optimization of the material growth techniques necessary: this includes everything from the growth of the buffer and template, to the growth of the active region. The broad area devices realized in this work demonstrate a quantum efficiency that is among the highest ever reported for a back-illuminated solar-blind photodetector (responsivity of 157 mA/W at 280nm, external quantum efficiency of 68%). Taking advantage of the back illuminated nature of these detectors, we have successfully developed the technology to hybridize and test a solar-blind focal plane array camera. The initial focal plane array shows good uniformity and reasonable operability, and several images from this first camera are presented. However, in order to

  13. Compact multispectral photodiode arrays using micropatterned dichroic filters

    NASA Astrophysics Data System (ADS)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  14. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  15. Nano-multiplication region avalanche photodiodes and arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  16. Measurement of Radiation - Light Field Congruence using a Photodiode Array

    NASA Astrophysics Data System (ADS)

    Balderson, Michael J.

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In this thesis, we describe the development of a novel device that enables precise and automated measurement of radiation-light field congruence of medical linear accelerators for the purpose of improving setup accuracy, and standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Using the device, we show that the radiation-light field congruence for both 6 and 15 MV beams is within 2 mm on a Varian Clinac 21 EX medical linear accelerator. Because measurements are automated, ambiguities resulting from observer variability are removed, greatly improving the reproducibility of measurements over time and across observers. We expect the device to be useful in providing consistent measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, and as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  17. Interdigitated microelectrode array-coupled bipolar semiconductor photodiode array (IMEA-PDA) microchip for on-chip electrochemiluminescence detection.

    PubMed

    Pal, Sukdeb; Kim, Min Jung; Tak, Yu Kyung; Kwon, Ho Taik; Song, Joon Myong

    2009-10-01

    This paper reports the design, fabrication and testing of a microchip wherein interdigitated microelectrode arrays (IMEA) were integrated with bipolar semiconductor photodiode array (PDA) chip to fabricate a highly compact embodiment for on-chip handling of solutions and electrochemiluminescence (ECL) detection. A 12 x 12 micro array of photodiodes, each coupled with an interdigitated microelectrode array (IMEA), an array of current amplifiers, and a photodiode element-addressing circuit were integrated into a single 2 x 2 cm² IC chip. Each photodiode had dimensions of 300 x 300 μm² and the photodiode-to-photodiode distance was 100 μm. The chip was successfully applied to the on-chip quantification of electro-chemiluminescing probe-labeled single stranded oligonucleotides. The minimum detectable limit at signal/noise ≥ 3 was found to be 5 x 10⁻¹⁴ moles of oligonucleotides with a sample volume as low as 5 microl (i.e., 10 fmole/μl). The attractive features of the developed IMEA-PDA microchip are that a plurality of samples can be analyzed simultaneously using a chip and that for a given sample the data can be averaged from values obtained from multiple, individually addressed pixels. These in turn bring in speed and statistical confidence in analysis. The IMEA-PDA microchip system has the potential to be used as a versatile and highly compact chemical analysis tool for chemical sensing and metrology applications.

  18. Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

    NASA Astrophysics Data System (ADS)

    Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

    2015-11-01

    Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

  19. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    PubMed Central

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  20. A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

  1. Application of a silicon photodiode array for solar edge tracking in the Halogen Occultation Experiment

    NASA Technical Reports Server (NTRS)

    Mauldin, L. E., III; Moore, A. S.; Stump, C. S.; Mayo, L. S.

    1985-01-01

    The optical and electronic design of the Halogen Occultation Experiment (HALOE) elevation sunsensor is described. This system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned, monolithic charge coupled device. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the HALOE science instantaneous-field-of-view (IFOV) across the vertical solar diameter during instrument calibration, and then maintain the science IFOV four arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 0.7 micrometer operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability. The HALOE instrument is a gas correlation radiometer that is now being developed by NASA Langley Research Center for the Upper Atmospheric Research Satellite.

  2. Self-scanned photodiode array - High performance operation in high dispersion astronomical spectrophotometry

    NASA Technical Reports Server (NTRS)

    Vogt, S. S.; Tull, R. G.; Kelton, P.

    1978-01-01

    A multichannel spectrophotometric detector system has been developed using a 1024 element self-scanned silicon photodiode array, which is now in routine operation with the high-dispersion coude spectrograph of the University of Texas McDonald Observatory 2.7-m telescope. Operational considerations in the use of such arrays for high precision and low light level spectrophotometry are discussed. A detailed description of the system is presented. Performance of the detector as measured in the laboratory and on astronomical program objects is described, and it is shown that these arrays are highly effective detectors for high dispersion astronomical spectroscopy.

  3. An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

    NASA Astrophysics Data System (ADS)

    Hazari, Arnab; Zunaid Baten, Md.; Yan, Lifan; Millunchick, Joanna M.; Bhattacharya, Pallab

    2016-11-01

    The III-nitride nanowire heterostructure arrays with multiple InN disk light absorbing regions have been grown by plasma-assisted molecular beam epitaxy on (001)Si substrates, and guided wave photodiodes have been fabricated and characterized. The spectral photocurrent of the devices has been measured under reverse bias, and the data exhibit distinct shoulders in the range of 0.69-3.2 eV (0.39-1.8 μm). The estimated responsivity at a wavelength of 1.3 μm is 0.2 A/W. The nanowire photodiode response was also measured with an excitation at one facet provided by an edge-emitting laser fabricated with the same nanowire array and emitting at 1.3 μm.

  4. Vacuum photodiode detector array for broadband UV detection in a tokamak plasma.

    PubMed

    Zweben, S J; Menyuk, C R; Taylor, R J

    1979-08-01

    An array of vacuum photodiode detectors has been used to monitor discharge equilibrium, stability, and cleanliness in the Macrotor tokamak. These detectors use the photoelectric effect on small tungsten plates to measure UV emission in the band lambda approximately 200-1200 angstroms, and so are sensitive mainly to impurity line radiation in Macrotor. The response of this system to controlled impurity contamination experiments and to disruptions is described. The design, construction, and background problems associated with these detectors are discussed in detail.

  5. 16-element photodiode array for the angular microdeflection detector and for stabilization of a laser radiation direction

    NASA Astrophysics Data System (ADS)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Bar, Jan; Dobrowolski, Rafał; Klimov, Andrii; Klos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Prokaryn, Piotr; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Szmigiel, Dariusz; Zaborowski, Michal

    2016-12-01

    In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology. The electrical and photoelectrical parameters of the arrays are presented.

  6. Bright Spots: UV Measurements Using a Vacuum Photodiode Array

    NASA Astrophysics Data System (ADS)

    Perkins, Rory; Bellan, Paul

    2010-11-01

    Solar coronal loops typically erupt abruptly after long quiescent periods. Such eruptions might be initiated by interactions between adjacent loops; this possibility was explored in a laboratory experiment where two plasma-filled flux tubes merge in either a co-or counter-helicity arrangement (J.F. Hansen, S.K.P. Tripathi, and P.M. Bellan, Phys. Plasma 2, 3177(2004)). The latter arrangement produces a bright region with enhanced soft x-ray emission. We investigate such mergings with a new array of EUV photo-detectors (based on S.J. Zweben, R.J. Taylor, Plasma Physics, Vol. 23, No. 4(1981)) that provides spatially and temporally resolved measurements of radiation between 10 and 120 nm. The detector boasts a sub-microsecond rise-time and provides a large signal without amplification. The detector is shielded from the charged particle background by permanent magnets. A novel two-step scheme diverts RF ground loop currents and greatly improves the signal-to-noise ratio.

  7. Development of a testbed for flexible a-Si:H photodiode sensing arrays

    NASA Astrophysics Data System (ADS)

    Dominguez, Alfonso; Kunnen, George; Vetrano, Michael; Smith, Joseph; Marrs, Michael; Allee, David R.

    2013-05-01

    Large area, flexible sensing arrays for imaging, biochemical sensing and radiation detection are now possible with the development of flexible active matrix display technology. In particular, large-area flexible imaging arrays can provide considerable advancement in defense and security industries because of their inherent low manufacturing costs and physical plasticity that allows for increased adaptability to non-planar mounting surfaces. For example, a flexible array of photodetectors and lenslets formed into a cylinder could image simultaneously with a 360 degree view without the need for expensive bulky optics or a gimbaled mount. Here we report the design and development of a scalable 16x16 pixel testbed for flexible sensor arrays using commercial-off-the-shelf (COTS) parts and demonstrate the capture of a shadow image with an array of photodiodes and active pixel sensors on a plastic substrate. The image capture system makes use of an array of low-noise, InGaZnO active pixel amplifiers to detect changes in current in 2.4 μm-thick reverse-biased a-Si:H PIN diodes. A thorough characterization of the responsivity, detectivity, and optical gain of an a- Si:H photodiode is also provided. At the back end, analog capture circuitry progressively scans the array and constructs an image based on the electrical activity in each pixel. The use of correlated-double-sampling to remove fixed pattern noise is shown to significantly improve spatial resolution due to process variations. The testbed can be readily adapted for the development of neutron, alpha-particle, or X-ray detection arrays given an appropriate conversion layer.

  8. Linear array of photodiodes to track a human speaker for video recording

    NASA Astrophysics Data System (ADS)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  9. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  10. A 16-channel avalanche photodiode detector array for visible and near-infrared flow cytometry

    NASA Astrophysics Data System (ADS)

    Lawrence, William G.; Stapels, Christopher; Farrell, Richard; Tario, Joseph D., Jr.; Podniesinski, Edward; Wallace, Paul K.; Christian, James F.

    2006-02-01

    We report on the development and application of a flow cytometer using a 16-channel avalanche photodiode (APD) linear detector array. The array is configured with a dispersive grating to simultaneously record emission over a broad wavelength range using the 16 APD channels of the linear APD array. The APD detector elements have a peak quantum efficiency of 80% near 900 nm and have at least 40% quantum efficiency over the 400-nm to 1000-nm wavelength range. The extended red sensitivity of the detector array facilitates the use of lower energy excitation sources and near IR emitting dyes which reduces the impact of autofluorescence in signal starved measurements. The wide wavelength sensitivity of the APD array permits the use of multiple excitation sources and many different fluorescent labels to maximize the number of independent parameters in a given experiment. We show the sensitivity and linearity measurements for a single APD detector. Initial results for the flow cytometer with the 16-element APD array and the 16-channel readout ASIC (application specific integrated circuit) are presented.

  11. Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays

    NASA Astrophysics Data System (ADS)

    Masini, G.; Colace, L.; Petulla, F.; Assanto, G.; Cencelli, V.; DeNotaristefani, F.

    2005-02-01

    In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 °C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented.

  12. Impact ionization engineered avalanche photodiode arrays for free space optical communication

    NASA Astrophysics Data System (ADS)

    Ferraro, Mike S.; Rabinovich, William S.; Clark, William R.; Waters, William D.; Campbell, Joe C.; Mahon, Rita; Vaccaro, Kenneth; Krejca, Brian D.

    2016-03-01

    High sensitivity photodetectors serve two purposes in free space optical communication: data reception and position sensing for pointing, tracking, and stabilization. Because of conflicting performance criteria, two separate detectors are traditionally utilized to perform these tasks but recent advances in the fabrication and development of large area, low noise avalanche photodiode (APD) arrays have enabled these devices to be used both as position sensitive detectors (PSD) and as communications receivers. Combining these functionalities allows for more flexibility and simplicity in optical assembly design without sacrificing the sensitivity and bandwidth performance of smaller, single element data receivers. Beyond eliminating the need to separate the return beam into two separate paths, these devices enable implementation of adaptive approaches to compensate for focal plane beam wander and breakup often seen in highly scintillated terrestrial and maritime optical links. While the Naval Research Laboratory (NRL) and Optogration Inc, have recently demonstrated the performance of single period, InAlAs/InGaAs APD arrays as combined data reception and tracking sensors, an impact ionization engineered (I2E) epilayer design achieves even lower carrier ionization ratios by incorporating multiple multiplication periods engineered to suppress lower ionization rate carriers while enhancing the higher ionization rate carriers of interest. This work presents a three period I2E concentric, five element avalanche photodiode array rated for bandwidths beyond 1GHz with measured carrier ionization ratios of 0.05-0.1 at moderate APD gains. The epilayer design of the device will be discussed along with initial device characterization and high speed performance measurements.

  13. Determination of acaricides in honey by high-performance liquid chromatography with photodiode array detection.

    PubMed

    Martel, Anne-Claire; Zeggane, Sarah

    2002-04-19

    Rapid analytical methods are described to control quality of honeys, concerning residues of acaricides applied in hives to prevent Varroa jacobsoni infestation. A liquid-liquid extraction with hexane-propanol-2-ammonia (60 ml:30 ml:0.28%) was used for the simultaneous analysis of coumaphos, bromopropylate, amitraz and fluvalinate. For thymol, one clean up on a solid-phase extraction C18 (500 mg, 6 ml) column was performed; for rotenone, a liquid extraction with dichloromethane was realised. Quantitative recoveries obtained with honey were satisfactory and were superior to 80%. All acaricides are identified by reversed-phase high-performance liquid chromatography with photodiode array detection. Quantification limits obtained were below maximal residue limits when these exist.

  14. Determination of diarylheptanoids from Alpinia officinarum (Lesser Galangal) by HPLC with photodiode array and electrochemical detection.

    PubMed

    Liu, Zhihua; Sang, Shengmin; Hartman, Thomas G; Ho, Chi-Tang; Rosen, Robert T

    2005-01-01

    Normal-phase column chromatography followed by semi-preparative reversed-phase HPLC has been used to isolate, from the rhizomes of Alpinia officinarum, five diarylheptanoids identified as 5-hydroxy-7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-3-heptanone, 5-methoxy-7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-3-heptanone, 7-(4"-hydroxyphenyl)-1-phenylhept-4-en-3-one, 7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-hept-4-en-3-one, 1,7-diphenylhept-4-en-3-one. The levels of these five diarylheptanoids in root material were determined quantitatively by HPLC with UV detection and the assay methods so developed were simple, rapid and accurate. Four of the diarylheptanoids could also be detected by HPLC with electrochemical detection (ECD) in the oxidative mode, and ECD was found to have a higher sensitivity than photodiode array detection.

  15. High-speed Imaging and Wavefront Sensing with an Infrared Avalanche Photodiode Array

    NASA Astrophysics Data System (ADS)

    Baranec, Christoph; Atkinson, Dani; Riddle, Reed; Hall, Donald; Jacobson, Shane; Law, Nicholas M.; Chun, Mark

    2015-08-01

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e- in the lab, and a total noise of 2.52 e- on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  16. HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

    SciTech Connect

    Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark; Riddle, Reed; Law, Nicholas M.

    2015-08-10

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  17. Radiation tolerance of a Geiger-mode avalanche photodiode imaging array

    NASA Astrophysics Data System (ADS)

    Kolb, Kimberly E.; Figer, Donald F.; Lee, Joong; Hanold, Brandon J.

    2016-07-01

    Radiation testing results for a Geiger-mode avalanche photodiode (GM-APD) array-based imager are reviewed. Radiation testing is a crucial step in technology development that assesses the readiness of a specific device or instrument for space-based missions or other missions in high-radiation environments. Pre- and postradiation values for breakdown voltage, dark count rate (DCR), after pulsing probability, photon detection efficiency (PDE), crosstalk probability, and intrapixel sensitivity are presented. Details of the radiation testing setup and experiment are provided. The devices were exposed to a total dose of 50 krad(Si) at the Massachusetts General Hospital's Francis H. Burr Proton Therapy Center, using monoenergetic 60 MeV protons as the radiation source. This radiation dose is equivalent to radiation absorbed over 10 solar cycles at an L2 orbit with 1-cm aluminum shielding. The DCR increased by 2.3 e-/s/pix/krad(Si) at 160 K, the afterpulsing probability increased at all temperatures and settings by a factor of ˜2, and the effective breakdown voltage shifted by +1.5 V. PDE, crosstalk probability, and intrapixel sensitivity were unchanged by radiation damage. The performance of the GM-APD imaging array is compared to the performance of the CCD on board the ASCA satellite with a similar radiation shield and radiation environment.

  18. Lutetium oxyorthosilicate block detector readout by avalanche photodiode arrays for high resolution animal PET.

    PubMed

    Pichler, B J; Swann, B K; Rochelle, J; Nutt, R E; Cherry, S R; Siegel, S B

    2004-09-21

    Avalanche photodiodes (APDs) have proven to be useful as light detectors for high resolution positron emission tomography (PET). Their compactness makes these devices excellent candidates for replacing bulky photomultiplier tubes (PMTs) in PET systems where space limitations are an issue. The readout of densely packed, 10 x 10 lutetium oxyorthosilicate (LSO) block detectors (crystal size 2.0 x 2.0 x 12 mm3) with custom-built monolithic 3 x 3 APD arrays was investigated. The APDs had a 5 x 5 mm2 active surface and were arranged on a 6.25 mm pitch. The dead space on the edges of the array was 1.25 mm. The APDs were operated at a bias voltage of approximately 380 V for a gain of 100 and a dark current of 10 nA per APD. The standard deviation in gain between the APDs in the array ranged from 1.8 to 6.5% as the gain was varied from 50 to 108. A fast, low-noise, multi-channel charge sensitive preamplifier application-specific integrated circuit (ASIC) was developed for the APD readout. The amplifier had a rise time of 8 ns, a noise floor of 515 e- rms and a 9 e- pF(-1) noise slope. An acquired flood image showed that all 100 crystals from the block detector could be resolved. Timing measurements with single-channel LSO-APD detectors, as well as with the array, against a plastic scintillator and PMT assembly showed a time resolution of 1.2 ns and 2.5 ns, respectively. The energy resolution measured with a single 4.0 x 4.0 x 10 mm3 LSO crystal, wrapped in four-layer polytetrafluoroethylene (PTFE) tape and coupled with optical grease on a single APD of the array, yielded 15% (full width at half maximum, FWHM) at 511 keV. Stability tests over 9 months of operation showed that the APD arrays do not degrade appreciably. These results demonstrate the ability to decode densely packed LSO scintillation blocks with compact APD arrays. The good timing and energy resolution makes these detectors suitable for high resolution PET.

  19. Fully tileable photodiode matrix for medical imaging by using through-wafer interconnects

    NASA Astrophysics Data System (ADS)

    Juntunen, Mikko; Ji, Fan; Henttinen, Kimmo; Luusua, Ismo; Hietanen, Iiro; Eränen, Simo

    2007-10-01

    This paper presents a technology for a fully tileable two-dimensional (2D) photodiode matrix for medical imaging, specifically X-ray computed tomography (CT). A key trend in the CT industry is to build machines with larger area detector to speed up the measurements and to avoid image blurring due to patient movement during scanning. In current CT detector constructions, a major limiting factor in providing more detector coverage is the need to read out the signals from the individual photo-detector elements of the detector array through lines along the surface facing the radiation source and wire bonds down to a substrate or to an electronics chip. Using this method, there is a physical limitation on the size of a photo-detector array that may be manufactured. A photo-detector with the possibility of expansion in all directions is known as a 'tileable' detector. A technology of integrating through-wafer interconnects (TWIs) with traditional front illuminated photodiodes is introduced. Photocurrent can be read out from back side of the photodiode chip through interconnects, giving possibility of constructing arbitrarily large area of photo-detector for CT machine. Results of a sample 2D demonstrator detector array are presented showing that the requirements of modern CT systems can be met.

  20. A slot-scanned photodiode-array/CCD hybrid detector for digital mammography.

    PubMed

    Mainprize, James G; Ford, Nancy L; Yin, Shi; Tümer, Türmay; Yaffe, Martin J

    2002-02-01

    We have developed a novel direct conversion detector for use in a slot-scanning digital mammography system. The slot-scan concept allows for dose efficient scatter rejection and the ability to use small detectors to produce a large-area image. The detector is a hybrid design with a 1.0 mm thick silicon PIN photodiode array (the x-ray absorber) indium-bump bonded to a CCD readout that is operated in time-delay integration (TDI) mode. Because the charge capacity requirement for good image quality exceeds the capabilities of standard CCDs, a novel CCD was developed. This CCD consists of 24 independent sections, each acting as a miniature CCD with eight rows for TDI. The signal from each section is combined off-chip to produce a full signal image. The MTF and DQE for the device was measured at several exposures and compared to a linear systems model of signal and noise propagation. Because of the scanning nature of TDI imaging, both the MTF(f) and DQE(f) are reduced along the direction of the scanning motion. For a 26 kVp spectrum, the DQE(0) was measured to be 0.75+/-0.02 for an exposure of 1.29 x 10(-5) C/kg (50 mR).

  1. Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

    2016-10-01

    A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

  2. Linear terrestrial laser scanning using array avalanche photodiodes as detectors for rapid three-dimensional imaging.

    PubMed

    Cai, Yinqiao; Tong, Xiaohua; Tong, Peng; Bu, Hongyi; Shu, Rong

    2010-12-01

    As an active remote sensor technology, the terrestrial laser scanner is widely used for direct generation of a three-dimensional (3D) image of an object in the fields of geodesy, surveying, and photogrammetry. In this article, a new laser scanner using array avalanche photodiodes, as designed by the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, is introduced for rapid collection of 3D data. The system structure of the new laser scanner is first presented, and a mathematical model is further derived to transform the original data to the 3D coordinates of the object in a user-defined coordinate system. The performance of the new laser scanner is tested through a comprehensive experiment. The result shows that the new laser scanner can scan a scene with a field view of 30° × 30° in 0.2 s and that, with respect to the point clouds obtained on the wall and ground floor surfaces, the root mean square errors for fitting the two planes are 0.21 and 0.01 cm, respectively. The primary advantages of the developed laser scanner include: (i) with a line scanning mode, the new scanner achieves simultaneously the 3D coordinates of 24 points per single laser pulse, which enables it to scan faster than traditional scanners with a point scanning mode and (ii) the new scanner makes use of two galvanometric mirrors to deflect the laser beam in both the horizontal and the vertical directions. This capability makes the instrument smaller and lighter, which is more acceptable for users.

  3. P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 × 8 photodiode array

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-09-01

    P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and "bulk" n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlike all known InAsSbP/InAs PDs with an abrupt p-n junction the linear impurity distribution PDs potentially suggest lower compared with analogs capacitance and tunneling current. Indeed the developed photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8 × 10-6 A/cm2, Ubias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 190 K (2π field of view, D3.1μm ∗ = 1.1 × 1012 cm Hz1/2/W) have been demonstrated. High photodiode performance is thought to be due to above peculiarities of the impurity distribution as well as low defect density in P-InAsSbP/n-InAs/n+-InAs single heterostructure.

  4. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    NASA Astrophysics Data System (ADS)

    Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

    2016-09-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  5. Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

    NASA Technical Reports Server (NTRS)

    Ackley, D. E.; Hladky, J.; Lange, M. J.; Mason, S.; Erickson, G.; Olsen, G. H.; Ban, V. S.; Forrest, S. R.; Staller, C.

    1990-01-01

    Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

  6. Nonlinearity and image persistence of P-20 phosphor-based intensified photodiode array detectors used in CARS spectroscopy.

    PubMed

    Snelling, D R; Smallwood, G J; Sawchuk, R A

    1989-08-01

    Several self-scanning photodiode arrays (IPDA) used for CARS spectroscopy are shown to exhibit a greater image persistence than has generally been realized, and to exhibit a falloff in sensitivity that is logarithmic with decreasing output signal. These effects are attributed to the P-20 phosphor based intensifiers used in the IPDAs and are probably generic to all such detectors. A strategy for minimizing the image persistence in CARS spectroscopy is presented. A prototype detector incorporating a much faster rare earth phosphor is evaluated and shown to be more suited to single pulse CARS measurements in turbulent combustion than the IPDAs incorporating P-20 phosphors.

  7. Nonlinear Time-Variant Response in an Avalanche Photodiode Array Based Laser Detection and Ranging System

    DTIC Science & Technology

    2007-03-01

    Model Details . . . . . . . . . . . . . 23 vi Page 3.5 ROIC Model Details . . . . . . . . . . . . . . . . . . . . 25 3.6 Model Implications...28 4.3 ROIC Systematic Error Suppression . . . . . . . . . . . 29 4.4 Time Variance . . . . . . . . . . . . . . . . . . . . . . . 32 4.5 Time...Field of View . . . . . . . . . . . . . . . . . 2 APD Avalanche Photodiode . . . . . . . . . . . . . . . . . . . . 3 ROIC Read-Out Integrated Circuit

  8. The Trace Analysis of DEET in Water using an On-line Preconcentration Column and Liquid Chromatography with UV Photodiode Array Detection

    EPA Science Inventory

    A method for the detection of trace levels of N,N-diethyl-m-toluamide (DEET) in water is discussed. The method utilizes an on-line preconcentration column in series with high performance liquid chromatography (HPLC) and UV photodiode array detection. DEET, a common insect repel...

  9. Microfluidic biosensor array with integrated poly(2,7-carbazole)/fullerene-based photodiodes for rapid multiplexed detection of pathogens.

    PubMed

    Matos Pires, Nuno Miguel; Dong, Tao

    2013-11-25

    A multiplexed microfluidic biosensor made of poly(methylmethacrylate) (PMMA) was integrated into an array of organic blend heterojunction photodiodes (OPDs) for chemiluminescent detection of pathogens. Waterborne Escherichia coli O157:H7, Campylobacter jejuni and adenovirus were targeted in the PMMA chip, and detection of captured pathogens was conducted by poly(2,7-carbazole)/fullerene OPDs which showed a responsivity over 0.20 A/W at 425 nm. The limits of chemiluminescent detection were 5 × 10(5) cells/mL for E. coli, 1 × 10(5) cells/mL for C. jejuni, and 1 × 10(-8) mg/mL for adenovirus. Parallel analysis for all three analytes in less than 35 min was demonstrated. Further recovery tests illustrated the potential of the integrated biosensor for detecting bacteria in real water samples.

  10. Conversion of a sequential inductively coupled plasma emission spectrometer into a multichannel simultaneous system using a photodiode array detector

    PubMed Central

    Araújo, Mário César Ugulino; Neto, Benício de Barros; Pasquini, Célio

    1998-01-01

    A monochannel plasma emission spectrometer was converted to a multichannel instrument by the introduction of a detection system based on an array of 1024 photodiodes and a low-resolution dispersion device. The new, relatively inexpensive equipment, features both the high speed typical of simultaneous instruments and the versatility of scanning systems. This paper reports on an evaluation of the modified equipment for quantitative analysis with the simultaneous determination of Al, Mn, Mg, Ca, Fe and Cu in a natural water matrix. An average relative prediction error of 2.4% was found which is the same as the error obtained with the conventional analytical method. Data acquisition with the modified instrument is up to 40 times faster. PMID:18924819

  11. Identification of fish species by reversed-phase high-performance liquid chromatography with photodiode-array detection.

    PubMed

    Knuutinen, J; Harjula, P

    1998-01-23

    A method for the separation of sarcoplasmic fish proteins by RP-HPLC is described. The procedure revealed significant differences useful for reliable identification of fish species. Sixteen of the most common Finnish freshwater fish species were differentiated by species-specific HPLC chromatograms obtained using photodiode-array detection (PAD) at 200-350 nm. The analytical column was a Hi-Pore RP-304 reversed-phase column. The separation was performed by a linear gradient of acetonitrile and water with a small amount of trifluoracetic acid (TFA). Star-symbol plots were constructed from the chromatograms to visualize the data. Clearly different HPLC protein profiles for most fish species were obtained. The chromatograms of salmonoids show similarities, whereas the protein profiles of cyprinids are dissimilar. Minor intraspecific differences were obtained for three types of powan (Coregonus lavaretus).

  12. Instrumentation: Photodiode Array Detectors in UV-VIS Spectroscopy. Part II.

    ERIC Educational Resources Information Center

    Jones, Dianna G.

    1985-01-01

    A previous part (Analytical Chemistry; v57 n9 p1057A) discussed the theoretical aspects of diode ultraviolet-visual (UV-VIS) spectroscopy. This part describes the applications of diode arrays in analytical chemistry, also considering spectroelectrochemistry, high performance liquid chromatography (HPLC), HPLC data processing, stopped flow, and…

  13. Control and dynamic range extension of linear photodiode arrays by a single board computer

    NASA Astrophysics Data System (ADS)

    McGeorge, Scott W.; Salin, Eric D.

    A complete interface for data acquisition and control of Reticon Series arrays utilizing an inexpensive microcomputer (Rockwell AIM-65) is described and with specific application to atomic spectra (ICP), data collection techniques are illustrated that provide a dynamic range extension for intense signals.

  14. Enhanced photoresponse of conformal TiO{sub 2}/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition

    SciTech Connect

    Haider, Ali; Biyikli, Necmi; Cansizoglu, Hilal; Cansizoglu, Mehmet Fatih; Karabacak, Tansel; Okyay, Ali Kemal

    2015-01-01

    In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor nanorod (NR) arrays offer enhanced photoresponse compared to conventional planar thin-film counterparts. Silver (Ag) metallic NR arrays were deposited on Ag-film/Si templates by utilizing GLAD. Subsequently, titanium dioxide (TiO{sub 2}) was deposited conformally on Ag NRs via ALD. Scanning electron microscopy studies confirmed the successful formation of vertically aligned Ag NRs deposited via GLAD and conformal deposition of TiO{sub 2} on Ag NRs via ALD. Following the growth of TiO{sub 2} on Ag NRs, aluminum metallic top contacts were formed to complete the fabrication of NR-based Schottky photodiodes. Nanostructured devices exhibited a photo response enhancement factor of 1.49 × 10{sup 2} under a reverse bias of 3 V.

  15. Quantitative analysis and chromatographic fingerprinting for the quality evaluation of Forsythia suspensa extract by HPLC coupled with photodiode array detector.

    PubMed

    Xia, Yonggang; Yang, Bingyou; Wang, Qiuhong; Liang, Jun; Wei, Youhe; Yu, Hedan; Zhang, Qingbo; Kuang, Haixue

    2009-12-01

    A simple and reproducible HPLC-photodiode array detector method has been described for evaluating and controlling quality of Forsythia suspensa extract (FSE). First, by analysis of chromatographic fingerprints, the similarities of chromatograms of FSE samples from the same pharmaceutical company exceeded 0.999, 0.997 and 0.960, respectively, although they were much lower from different pharmaceutical companies. Second, by further comparing many batches of extract chromatograph charts with the corresponding reference herb materials, the "common peaks" 3, 5, 7 and 10 were defined as "marker peaks", which were identified as (+)-pinoresinol-beta-D-glucoside, forsythiaside, phillyrin and phillygenin, respectively. Third, four "marker peaks" were simultaneously determined based on fingerprint chromatogram for further controlling the quality of FSE quantitatively. Namely, the newly developed method was successfully applied to analyze 38 batches of FSE samples supplied by three pharmaceutical factories, which showed acceptable linearity, intra-day precision (RSD<2.76%), inter-day precision (RSD<3.43%) and the average recovery rates in the range of (95.38+/-2.96)% to (101.60+/-3.08)%. At last, hierarchical clustering analysis and Bayes discriminant analysis statistical methods were used to classify and differentiate the 38 FSE samples to provide the basis for guiding reasonable use of FSE and controlling its quality better.

  16. Identification of chlorophylls and carotenoids in major teas by high-performance liquid chromatography with photodiode array detection.

    PubMed

    Suzuki, Yasuyo; Shioi, Yuzo

    2003-08-27

    The separation and identification of pigments, chlorophylls, and carotenoids of seven teas and fresh leaf of tea (Camellia sinensis) by high-performance liquid chromatography (HPLC) are described. HPLC was carried out using a Symmetry C(8) column with a photodiode array detector. Pigments were eluted with a binary gradient of aqueous pyridine solution at a flow rate of 1.0 mL/min at 25 degrees C. HPLC analyses achieved the separation of more than 100 pigment peaks, and 79 pigment species, 41 chlorophylls, and 38 carotenoids were detected. The presence of degraded chlorophylls was a common feature, and the number and the variety of pigments differed with tea species. Generally, the numbers of chlorophyll species tended to increase with processing steps, while carotenoid species were decreased, especially by heating. Particularly in green teas, a change of carotenoid structure, conversion of violaxanthin to auroxanthin, occurred. In hot water extracts of teas, both chlorophylls and carotenoids were also detected, but the concentration of chlorophylls was less than 2% as compared with acetone extracts. The pigment compositions were compared between tea species, and they are discussed in terms of the differences in their manufacturing processes.

  17. Determination of total phthalates in edible oils by high-performance liquid chromatography coupled with photodiode array detection.

    PubMed

    Xie, Qilong; Sun, Dekui; Han, Yangying; Jia, Litao; Hou, Bo; Liu, Shuhui; Li, Debao

    2016-03-01

    The previously reported procedure for the determination of the total phthalate in fatty food involved the extraction of phthalates using chloroform/methanol followed by the removal of the solvents before alkaline hydrolysis requiring 20 h and derivatization of phthalic acid. In this study, a phase-transfer catalyst (tetrabutylammonium chloride) was used in the liquid-liquid heterogeneous hydrolysis of phthalates in oil matrix shortening the reaction time to within 25 min. The resulting phthalic acid in the hydrolysate was extracted by a novel molecular complex based dispersive liquid-liquid microextraction method coupled with back-extraction before high-performance liquid chromatography coupled with photodiode array detection. Under the optimal experimental conditions, the linearity of the method was in the range of 0.5-12 nmol/g with the correlation coefficients (r) >0.997. The detection limit (S/N = 3) was 0.11 nmol/g. Intraday and interday repeatability values expressed as relative standard deviation were 3.9 and 7.1%, respectively. The recovery rates ranged from 82.4 to 99.0%. The developed method was successfully applied for the analysis of total phthalate in seven edible oils.

  18. Study of flavonoids of Sechium edule (Jacq) Swartz (Cucurbitaceae) different edible organs by liquid chromatography photodiode array mass spectrometry.

    PubMed

    Siciliano, Tiziana; De Tommasi, Nunziatina; Morelli, Ivano; Braca, Alessandra

    2004-10-20

    A liquid chromatography-mass spectrometry (LC-MS)-based method was developed for the characterization of flavonoids from Sechium edule (Jacq) Swartz (Cucurbitaceae) edible organs, a plant cultivated since pre-Colombian times in Mexico where the fruit is called chayote. Chayote is used for human consumption in many countries; in addition to the fruits, stems, leaves and the tuberous part of the roots are also eaten. Eight flavonoids, including three C-glycosyl and five O-glycosyl flavones, were detected, characterized by nuclear magnetic resonance spectroscopic data, and quantified in roots, leaves, stems, and fruits of the plant by LC-photodiode array-MS. The aglycone moieties are represented by apigenin and luteolin, while the sugar units are glucose, apiose, and rhamnose. The results indicated that the highest total amount of flavonoids was in the leaves (35.0 mg/10 g of dried part), followed by roots (30.5 mg/10 g), and finally by stems (19.3 mg/10 g).

  19. Fingerprint Analysis of Desmodium Triquetrum L. Based on Ultra Performance Liquid Chromatography with Photodiode Array Detector Combined with Chemometrics Methods.

    PubMed

    Zhang, Meiling; Zhao, Cui; Liang, Xianrui; Ying, Yin; Han, Bing; Yang, Bo; Jiang, Cheng

    2016-01-01

    A fingerprinting approach was developed by means of ultra high-performance liquid chromatography with photodiode array detector for the quality control of Desmodium triquetrum L., an herbal medicine widely used for clinical purposes. Ten batches of raw material samples of D. triquetrum were collected from different regions of China. All UPLC analyses were carried out on a Waters ACQUITY UPLC BEH shield RP18 column (2.1 × 50 mm, 1.7 µm particle size) at 60°C, with a gradient mobile phase composed of 0.1% aqueous formic acid and acetonitrile at a flow rate of 0.45 mL/min. The method validation results demonstrated the developed method possessing desirable reproducibility, efficiency, and allowing fingerprint analysis in one chromatographic run within 13 min. The quality assessment was achieved by using chemometrics methods including similarity analysis, hierarchical clustering analysis and principal component analysis. The developed method can be used for further quality control of D. triquetrum.

  20. A theoretical study of improved front-illuminated avalanche drift detectors

    NASA Astrophysics Data System (ADS)

    Liang, K.; Yuan, J.; Li, H. R.; Yang, R.; Han, D. J.

    2013-06-01

    In this study, two avalanche drift detector (ADD) concepts were theoretically examined. One was an improved detector with an avalanche photodiode (APD) collecting and double pn-junction drift configuration, and the other was a combination of an APD collecting and metal oxide semiconductor (MOS) drift structure. The feasibility of the devices was theoretically investigated by the ISE-TCAD program. ADD can be operated in either Geiger mode or linear mode. In the former case, the detector was found to be appropriate for a single photon avalanche detector with a large collection area. In the latter case, the detector was observed to be well suited to be coupled to a scintillator for gamma-ray detection. The improved ADDs are considered to have good performances in the short wavelength optical detection and in matching common scintillation crystals with more flexibility.

  1. The SAPHIRA Near-Infrared Avalanche Photodiode Array: Telescope Deployments and Future Developments

    NASA Astrophysics Data System (ADS)

    Atkinson, Dani Eleanor; Hall, Donald; Baranec, Christoph

    2015-01-01

    We present our recent achievements of the Selex SAPHIRA APD arrays, which this year have seen deployment at three different telescopes, most notably demonstrating tip-tilt wavefront sensing in conjunction with the Palomar 1.5-m Telescope's Robo-AO system. A cooperative effort to provide enhanced speckle nulling capability to the SCExAO instrument on the Subaru telescope is also underway. We present the progress and development timeframe for the SAPHIRA and expected future applications, including targets and observational parameter space we expect the detectors to open to the astronomical community.

  2. Mechanics of cadmium telluride-zinc telluride nucleation on (112) Si for mercury cadmium telluride infrared photo-diode arrays

    NASA Astrophysics Data System (ADS)

    Dhar, Nibir Kumar

    , suggesting growth nucleates on and propagates two dimensionally along step edges. The present study treats the mechanics of ZnTe nucleation on Si. The associated kinetic barriers can be tailored to improve epitaxy. An improved HgCdTe planar heterojunction p/n infrared photodiode array was fabricated using the new CADRE technique.

  3. Residue level and dissipation pattern of lepimectin in shallots using high-performance liquid chromatography coupled with photodiode array detection.

    PubMed

    Kim, Sung-Woo; Rahman, Md Musfiqur; Abd El-Aty, A M; Truong, Lieu T B; Choi, Jeong-Heui; Park, Joon-Seong; Kim, Mi-Ra; Shin, Ho-Chul; Shim, Jae-Han

    2016-11-01

    Lepimectin, as an emulsifiable concentrate, was sprayed on shallots at the recommended dose rate (10 mL/20 L) to determine its residue levels, dissipation pattern, pre-harvest residue limits (PHRLs), and health risk. Samples were randomly collected over 10 days, extracted with acetonitrile, purified using an amino solid-phase extraction (NH2 -SPE) cartridge and analyzed using a high-performance liquid chromatography-photodiode array detection method. Field-incurred samples were confirmed using ultra-performance liquid chromatography-tandem mass spectrometry. The linearity was excellent, with a determination coefficient (R(2) ) of ≥0.9991. The recoveries at two spiking levels (0.2 and 1.0 mg/kg) ranged from 84.49 to 87.64% with relative standard deviations of ≤7.04%. The developed method was applied to field samples grown in separate greenhouses, one located in Naju and one in Muan, in the Republic of Korea. The dissipation pattern was described by first-order kinetics with half-lives of 1.9 (Naju) and 1.7 days (Muan). The PHRL curves indicated that, if the lepimectin residues are <0.18 (Naju) and <0.13 mg/kg (Muan) 5 days before harvest, the residue levels will be lower than the maximum residue limit (0.05 mg/kg) upon harvesting. The risk assessment data indicated that lepimectin is safe for use in the cultivation of shallots, with no risk of detrimental effects to the consumer.

  4. A linear photodiode array employed in a short range laser triangulation obstacle avoidance sensor. M.S. Thesis; [Martian roving vehicle sensor

    NASA Technical Reports Server (NTRS)

    Odenthal, J. P.

    1980-01-01

    An opto-electronic receiver incorporating a multi-element linear photodiode array as a component of a laser-triangulation rangefinder was developed as an obstacle avoidance sensor for a Martian roving vehicle. The detector can resolve the angle of laser return in 1.5 deg increments within a field of view of 30 deg and a range of five meters. A second receiver with a 1024 elements over 60 deg and a 3 meter range is also documented. Design criteria, circuit operation, schematics, experimental results and calibration procedures are discussed.

  5. Spectroscopic characterization by photodiode array detection of human urinary and amniotic protein HC subpopulations fractionated by anion-exchange and size-exclusion high-performance liquid chromatography.

    PubMed

    Calero, M; Escribano, J; Soriano, F; Grubb, A; Brew, K; Méndez, E

    1996-01-05

    A procedure for spectroscopic characterization and partial fractionation of human protein HC populations by high-performance liquid chromatography-photodiode array ultraviolet-visible detection is reported. Human protein HC from urine or amniotic fluid fractionated by anion-exchange HPLC in a protein Pak DEAE 5PW appeared to be heterogeneous as judged by the asymmetric elution pattern, consisting of a continuous irregular broad peak with several shoulders distributed along the whole chromatogram. Selected fractions containing shoulders were rechromatographed and finally six symmetrical homogeneous peaks with different retention times were obtained from each protein HC preparation. The direct automatic absorption spectra analyses at each peak maximum, indicated that all of the homogeneous peaks seemed to be protein HC, all of them associated to the same chromophore although with different stoichiometry ratios. Isoelectric focusing showed that each peak was composed of a limited number of subpopulations of protein HC with different isoelectric points. Size microheterogeneity has been also demonstrated in both urinary and amniotic protein HC preparations by a combination of size-exclusion HPLC on a TSK 3000 SW6 column and photodiode array detection. Partial fractionation of human albumin on an analytical anion-exchange Mono-Q PC 1.6/5 column, has allowed the identification of heterogeneous chromophore-containing populations displaying significant absorption in the visible region in resemblance to that of protein HC.

  6. Simultaneous determination of seven lignans in Justicia procumbens by high performance liquid chromatography-photodiode array detection using relative response factors.

    PubMed

    Luo, Zuliang; Kong, Weijun; Qiu, Feng; Yang, Meihua; Li, Qian; Wei, Riwei; Yang, Xiaoli; Qin, Jieping

    2013-02-01

    A simple and sensitive HPLC coupled with photodiode array (HPLC-PDA) method was developed for simultaneous determination of seven lignans in Justicia procumbens using relative response factors (RRFs). The chromatographic separation was performed on a Shiseido Capcell Pak C(18) column (250 × 4.6 mm id, 5 μm), a gradient elution of acetonitrile/water, and a photodiode array detector. The column temperature was maintained at 35°C and the detection wavelength was set at 256 nm. Chinensinaphthol methyl ether was selected as the reference compound for calculating the relative response factors of the lignans. It has shown that the RRFs for lignans are quite similar at 256 nm of detection under different analytical conditions (different columns and HPLC instruments). Using RRFs, not every lignan is needed as a reference standard, making the method ideal for rapid, routine analysis, especially for those laboratories where lignans standards are not readily available. An economic and practicable HPLC method using RRFs was established for the determination of seven lignans in J. procumbens. This method not only can determine multiple indexes in traditional Chinese medicines (TCMs) simultaneously, but also resolve the problem of lacking of chemical standards. It will be a good quality evaluation method and pattern for TCMs.

  7. Nuclear resonant scattering measurements on {sup 57}Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector

    SciTech Connect

    Kishimoto, S. Haruki, R.; Mitsui, T.; Yoda, Y.; Taniguchi, T.; Shimazaki, S.; Ikeno, M.; Saito, M.; Tanaka, M.

    2014-11-15

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.

  8. A Comparison of DEF X-Ray Film and a Photodiode Array (Reticon) as Detectors for an X-Ray Crystal Spectrometer.

    PubMed

    Goodman, D A; Eason, R W; Shiwai, B; Allinson, N; Magorrian, B; Grande, M; Ridgley, A

    1989-01-01

    A crystal spectrometer with a photodiode array (PDA) detector was tested for a range of x-ray energies between 1 and 2 keV. A laser-produced plasma has been used as an x-ray source and was generated by the high-power (Vulcan) glass laser system at the SERC Rutherford Appleton Laboratory, UK. The performance of the array was directly compared with the response of Kodak DEF x-ray film. In order to compare quantitatively the performances of the PDA and the film, detective quantum efficiency (DQE) considerations are presented for both devices. It is demonstrated that the PDA has a useful dynamic range which is approximately seven times greater than that of film, a peak DQE of approximately six times that of film, and a greatly superior low-signal performance. The operational characteristics of the PDA are discussed.

  9. Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions

    NASA Technical Reports Server (NTRS)

    Janesick, James R. (Inventor)

    1991-01-01

    A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

  10. Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

    NASA Technical Reports Server (NTRS)

    Vizcaino, Paul; Ramirez-Angulo, Jaime; Patel, Umesh D.

    2007-01-01

    A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

  11. Quantitative and chemical fingerprint analysis for the quality evaluation of Isatis indigotica based on ultra-performance liquid chromatography with photodiode array detector combined with chemometric methods.

    PubMed

    Shi, Yan-Hong; Xie, Zhi-Yong; Wang, Rui; Huang, Shan-Jun; Li, Yi-Ming; Wang, Zheng-Tao

    2012-01-01

    A simple and reliable method of ultra-performance liquid chromatography with photodiode array detector (UPLC-PDA) was developed to control the quality of Radix Isatidis (dried root of Isatis indigotica) for chemical fingerprint analysis and quantitative analysis of eight bioactive constituents, including R,S-goitrin, progoitrin, epiprogoitrin, gluconapin, adenosine, uridine, guanosine, and hypoxanthine. In quantitative analysis, the eight components showed good regression (R > 0.9997) within test ranges, and the recovery method ranged from 99.5% to 103.0%. The UPLC fingerprints of the Radix Isatidis samples were compared by performing chemometric procedures, including similarity analysis, hierarchical clustering analysis, and principal component analysis. The chemometric procedures classified Radix Isatidis and its finished products such that all samples could be successfully grouped according to crude herbs, prepared slices, and adulterant Baphicacanthis cusiae Rhizoma et Radix. The combination of quantitative and chromatographic fingerprint analysis can be used for the quality assessment of Radix Isatidis and its finished products.

  12. Determination of residues of UV filters in natural waters by solid-phase extraction coupled to liquid chromatography-photodiode array detection and gas chromatography-mass spectrometry.

    PubMed

    Giokas, Dimosthenis L; Sakkas, Vasilios A; Albanis, Triantafyllos A

    2004-02-13

    This study describes a procedure for the enrichment, separation and quantification of four major UV filters in natural waters. Solid-phase extraction combined with liquid chromatography and photodiode array detection (LC-UV-DAD), and gas chromatography with mass spectroscopy (GC-MS) were employed for the analyses. LC of the four compounds with surfactant-modified hydro-organic eluents gave satisfactory resolution of overlapping peaks. In GC, a significant improvement of the detection limits was attained, but only three compounds could be detected. The method was validated for, and applied to, various water samples prone to UV filter accumulation due to recreational activities. Recoveries from real samples were 86-99% with LOQs as low as 0.5 ng/l depending on the sample volume and the analytical procedure.

  13. Evaluation of principal components analysis with high-performance liquid chromatography and photodiode array detection for the forensic differentiation of ballpoint pen inks.

    PubMed

    Kher, A A; Green, E V; Mulholland, M I

    2001-07-01

    Inks from seven black and eight blue ballpoint pens were separated by a high-performance liquid chromatography (HPLC) method utilizing a photodiode array detection (PDA). A classifier flowchart was designed for the chromatographic data based on the presence or absence of certain peaks at different wavelengths to qualitatively discriminate between the inks. The same data were quantitatively classified by principal components analysis (PCA) to estimate the separation between a pair of classes of ink samples. It was found that the black ballpoint pen inks were discriminated satisfactorily utilizing two-dimensional data of the peak areas and retention times at the optimum wavelengths. The blue pens were discriminated by analyzing the chromatographic data at four different wavelengths simultaneously with a cross-validated PCA. The results of this study indicated that HPLC-PDA coupled with chemometrics could make a powerful discriminating tool for the forensic chemist, especially when analyzing extensive and/or complex data.

  14. Simultaneous determination of 16 polycyclic aromatic hydrocarbons in reclaimed water using solid-phase extraction followed by ultra-performance convergence chromatography with photodiode array detection.

    PubMed

    Zhang, Yun; Xiao, Zhiyong; Lv, Surong; Du, Zhenxia; Liu, Xiaoxia

    2016-03-01

    A new fast and effective analysis method has been developed to simultaneously determine 16 polycyclic aromatic hydrocarbons in reclaimed water samples by ultra-performance convergence chromatography with photodiode array detection and solid-phase extraction. The parameters of ultra-performance convergence chromatography on the separation behaviors and the crucial condition of solid-phase extraction were investigated systematically. Under optimal conditions, the 16 polycyclic aromatic hydrocarbons could be separated within 4 min. The limits of detection and quantification were in the range of 0.4-4 and 1-10 μg/L in water, respectively. This approach has been applied to a real industrial wastewater treatment plant successfully. The results showed that polycyclic aromatic hydrocarbons were dramatically decreased after chemical treatment procedure, and the oxidation procedure was effective to remove trace polycyclic aromatic hydrocarbons.

  15. Autofocus technique for three-dimensional imaging, direct-detection laser radar using Geiger-mode avalanche photodiode focal-plane array.

    PubMed

    Oh, Min Seok; Kong, Hong Jin; Kim, Tae Hoon; Jo, Sung Eun

    2010-12-15

    An autofocus technique is proposed for a three-dimensional imaging, direct-detection laser radar system that uses a Geiger-mode avalanche photodiode focal plane array (GmAPD-FPA). This technique is implemented by pointing laser pulses on a target of interest and observing its scattered photon distribution on a GmAPD-FPA. Measuring the standard deviation of the photon distribution on a GmAPD-FPA enables the best focus condition to be found. The feasibility of this technique is demonstrated experimentally by employing a 1 × 8 pixel GmAPD-FPA. It is shown that the spatial resolution improves when the GmAPD-FPA is located in the best focus position found by the autofocus technique.

  16. Separation of some mono-, di- and tri-unsaturated fatty acids containing 18 carbon atoms by high-performance liquid chromatography and photodiode array detection.

    PubMed

    Czauderna, M; Kowalczyk, J

    2001-08-25

    Positional and geometric isomers of mono-, di- and tri-unsaturated fatty acids containing 18 carbon atoms were separated on commercially available reversed-phase columns in gradient systems composed of acetonitrile and water, utilizing photodiode array detection. The biological samples were hydrolyzed with 2 M NaOH for 35-40 min at 85-90 degrees C. After cooling, the hydrolysates were acidified with 4 M HCl and the free fatty acids were extracted with dichloromethane. The organic solvent was removed in a gentle stream of argon. The fatty acids were determined after pre-column derivatization with dibromacetophenone in the presence of triethylamine. The reaction components were mixed and reacted for 2 h at 50 degrees C. Separations of derivatized fatty acids were performed on two C18 columns (Nova Pak C18, 4 microm, 250x4.6 mm, Waters) by binary or ternate gradient programs and UV detection at 254 and 235 nm. The geometric and positional isomers of some unsaturated fatty acids were substantially retained on the C18 columns and were distinct from some saturated fatty acids, endogenous substances in biological samples or background interference. Only slight separation of critical pairs of cis-9 C18:1/cis-11 C18:1 and cis-6 C18:1/trans-11 C18:1 was obtained. A ternate gradient program can be used for complete fractionation of a mixture of conjugated linoleic acid isomers (CLA) from cis-9, cis-12 and trans-9, trans-12 isomers of C18:2. The CLA isomers in the effluent were monitored at 235 nm. The CLA isomers were differentiated from saturated and unsaturated fatty acids using a photodiode array detector. The utility of the method was demonstrated by evaluating the fatty acid composition of duodenal digesta, rapeseed and maize oils.

  17. Quantifying direct DQPSK receiver with integrated photodiode array by assessing an adapted common-mode rejection ratio

    NASA Astrophysics Data System (ADS)

    Wang, J.; Lauermann, M.; Zawadzki, C.; Brinker, W.; Zhang, Z.; de Felipe, D.; Keil, N.; Grote, N.; Schell, M.

    2011-12-01

    In this work, a direct DQPSK receiver was fabricated, which comprises a polymer waveguide based delay-line interferometer (DLI); a polymer based optical hybrid, and two monolithic pairs of > 25 GHz bandwidth photodiodes that are vertically coupled to the polymer planar lightwave circuit (PLC) via integrated 45° mirrors. The common mode rejection ratio (CMRR) is used to characterize the performance of coherent receivers, by indicating the electrical power balance between the balanced detectors. However, the standard CMRR can only be measured when the PDs can be illuminated separately. Also, the standard CMRR does not take into account the errors in the relative phases of the receiver outputs. We introduce an adapted CMRR to characterize the direct receiver, which takes into account the unequal responsivities of the PDs, the uneven split of the input power by the DLI and hybrid, the phase error and the extinction ratio of the DLI and hybrid.

  18. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  19. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging

    NASA Astrophysics Data System (ADS)

    El-Ghussein, Fadi; Mastanduno, Michael A.; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2014-01-01

    A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans.

  20. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging

    PubMed Central

    Mastanduno, Michael A.; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2013-01-01

    Abstract. A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans. PMID:23979460

  1. High efficiency n-Si/ p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

    NASA Astrophysics Data System (ADS)

    Kim, Hangil; Kim, Soo-Hyun; Ko, Kyung Yong; Kim, Hyungjun; Kim, Jaehoon; Oh, Jihun; Lee, Han-Bo-Ram

    2016-05-01

    A highly efficient n-Si/ p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ˜7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.

  2. Development of a Validated HPLC/Photodiode Array Method for the Determination of Isomenthone in the Aerial Parts of Ziziphora tenuior L.

    PubMed Central

    Ghassemi, Nasrollah; Ghanadian, Mustafa; Ghaemmaghami, Lili; Kiani, Haran

    2013-01-01

    Background Ziziphora tenuior L. known as Kakuti in Persian, is used in traditional medicine for fever, dysentery, uterus infection and as an analgesic. It is used also in the treatment of gastrointestinal disorders as carminative, or remedy of diarrhea or nausea. Major components of plant essential oil including pulegone, isomenthone, thymol, menthone, and piperitone are suggested to be responsible for the mentioned medicinal properties. Objectives In the present study, a normal high performance liquid chromatography (HPLC)/photodiode array validated method for quantification of isomenthone, one of the major constituents of Ziziphora, was established for the first time with a simple, rapid and accurate method. Materials and Methods HPLC analysis was done on a Waters system, equipped with 515 HPLC pump and waters 2996 photodiode array detector. The column was a Nova-Pak Silica (3.9 × 150 mm), and Empower software was used for the determination of the compounds and processing the data. The method was validated according to USP 32 requirements. Results A selective method for the resolution of isomenthone from two nearest peaks, thymol, and carvacrol was obtained with gradient system of hexane (A), and hexane: ethyl acetate (9:1) (B), starting with A: B (100:0) for 2 minutes, then 0−20% B in 5 minutes, A:B (80:20) for 5 minutes, then 20-30% B in 3 minutes, 30-100% B for 5 minutes, A:B (0:100) for 4 minutes following with equilibrating for 10 minutes. The flow rate was 1 mL/min at 22˚C and the injection volume for the standards and the samples was 20 μL. The retention time for isomenthone was found to be 7.45 minutes. The regression equation was y = 143235x - 2433 with the correlation co-factor R2 = 0.9992 and the percent recovery of 65.4 ± 3.85%. The sample obtained from 5 g of Z. teniour dried powder in 6 mL extract was standardized to contain 1.14 ± 0.030 μL/mL isomenthone which is equivalent to % 1.37 μL/g of the dried powdered plant. Limit of detection

  3. Determination of nitroaromatic explosives and their degradation products in unsaturated-zone water samples by high-performance liquid chromatography with photodiode-array, mass spectrometric, and tandem mass spectrometric detection

    USGS Publications Warehouse

    Gates, Paul M.; Furlong, E.T.; Dorsey, T.F.; Burkhardt, M.R.

    1996-01-01

    Mass spectrometry and tandem mass spectrometry, coupled by a thermospray interface to a high-performance liguid chromatography system and equipped with a photodiode array detector, were used to determine the presence of nitroaromatic explosives and their degradation products in USA unsaturated-zone water samples. Using this approach, the lower limits of quantitation for explosives determined by mass spectrometry in this study typically ranged from 10 to 100 ng/l.

  4. Determination of nitrofurans in animal feeds by liquid chromatography-UV photodiode array detection and liquid chromatography-ionspray tandem mass spectrometry.

    PubMed

    Barbosa, Jorge; Moura, Sara; Barbosa, Rita; Ramos, Fernando; da Silveira, Maria Irene Noronha

    2007-03-14

    Within the EU, the use of nitrofurans is prohibited in food production animals. For this reason detection of these compounds in feedingstuffs, at whatever limit, constitutes an offence under EU legislation. This detection generally involves the use of analytical methods with limits of quantification lowers than 1 mg kg(-1). These procedures are unsuitable for the detection and confirmation of trace amounts of nitrofurans in feedingstuffs due to contamination. It is well known that very low concentrations of these compounds can be the source of residues of nitrofuran metabolites in meat and other edible products obtained from animals consuming the contaminated feed. The present multi-compound method was capable of measuring very low concentrations of nitrofurantoin (NFT), nitrofurazone (NFZ), furazolidone (FZD) and furaltadone (FTD) in animal feed using nifuroxazide (NXZ) as internal standard. Following ethyl acetate extraction at mild alkaline conditions and purification on NH2 column, the nitrofurans are determined using liquid chromatography with photodiode-array detection (LC-DAD). It was observed a CCalpha ranged from 50 to 100 microg kg(-1). The liquid chromatography-tandem mass spectrometric (LC-MS/MS) procedure was used to confirm the identity of the suspected presence of any of the nitrofuran compounds.

  5. High-performance liquid chromatography with photodiode array detection and chemometrics method for the analysis of multiple components in the traditional Chinese medicine Shuanghuanglian oral liquid.

    PubMed

    Li, Bao Qiong; Chen, Jing; Li, Jiao Jiao; Wang, Xue; Zhai, Hong Lin; Zhang, Xiao Yun

    2015-12-01

    Shuanghuanlian oral liquid, a traditional Chinese medicine preparation, is a mixture of three herbs (Flos Lonicerae, Radix Scutellariae and Fructus Forsythiae). In this study, the quantitative analysis of three main active compounds, chlorogenic acid, forsythin and baicalin in samples from different manufacturers was performed rapidly by high-performance liquid chromatography coupled with photodiode array detection followed by Contour Projection coupled to stepwise regression treatment of the obtained three-dimensional spectra in which the partial overlap between adjacent target components existed. The method was validated for linearity (R>0.9940), precision (RSD<1.25%), recovery (92.20-102.50%), limit of detection (0.01-0.02 μg/mL) and limit of quantification (0.03-0.07 μg/mL). The results indicated that the combination of the three-dimensional spectra of traditional Chinese medicine and Contour Projection-stepwise regression offered an accurate, simple, low-cost and eco-friendly way for the rapid quantitative analysis of Shuanghuanlian oral liquid samples.

  6. Simultaneous Quantification of Antioxidant Compounds in Phellinus igniarius Using Ultra Performance Liquid Chromatography-Photodiode Array Detection-Electrospray Ionization Tandem Mass Spectrometry

    PubMed Central

    Wang, Nani; Li, Hongyu; Zhang, Yang; Zhu, Yan

    2016-01-01

    Natural antioxidants are widely used in the life sciences. Phellinus igniarius is a historically used natural antioxidant containing a variety of active compounds. Phenols, particularly Inoscavin A and Hypholomine B, are found in the high concentrations. Better quantitative methods are needed to perform quality control in order to support further research of this mushroom. An ultra-performance liquid chromatography method coupled to photodiode-array detection and an electrospray ionization tandem mass spectrometry method (UPLC-PAD-MS) was developed to simultaneously quantify Inoscavin A and Hypholomine B levels in the medicinal fungus Phellinus igniarius. The two compounds were quantified using UPLC-PAD and UPLC-MS. The methods were accurate (mean accuracy for spiked matrix ranged from 101.5% to 105.8%), sensitive (limit of detection ranged from 0.28 to 1.14 mg L-1) and precise (the relative standard deviations ranged from 0.13 to 2.8%). Inoscavin A and Hypholomine B were purified using high-speed counter-current chromatography (HSCCC), structural evaluated to meet the request of standard substances. UPLC separation was performed on a reversed-phase C18 column using gradient elution with acetonitrile and 0.1% formic acid over 10 min. The developed method was successfully applied to determine Inoscavin A and Hypholomine B in twelve Phellinus igniarius samples of different origins and the results showed that it was suitable for the analysis of these active components in Phellinus igniarius samples. PMID:27689891

  7. Simultaneous determination of catechins, caffeine and gallic acids in green, Oolong, black and pu-erh teas using HPLC with a photodiode array detector.

    PubMed

    Zuo, Yuegang; Chen, Hao; Deng, Yiwei

    2002-05-16

    A simple and fast HPLC method using a photodiode array detector was developed for simultaneous determination of four major catechins, gallic acid and caffeine. After multiple extractions with aqueous methanol and acidic methanol solutions, tea extract was separated within 20 min using a methanol-acetate-water buffer gradient elution system on a C(18) column. The sample extraction data demonstrated that the single extraction used in the previous studies with aqueous acetonitrile or methanol is not sufficient; the multiple extraction procedure is essential for the quantitative analysis of catechins, phenolic acids and caffeine in teas. Several green, Oolong, black and pu-erh teas were successfully analyzed by this method. The analytical results obtained indicated that green teas contain higher content of catechins [(-)-epigallocatechin gallate, (-)-epigallocatechin, (-)-epicatechin gallate, and (-)-epicatechin] than both Oolong, pu-erh and black teas because fermentation process during the tea manufacturing reduced the levels of catechins significantly. The fermentation process also remarkably elevated the levels of gallic acid in full-fermented pu-erh and black teas. Another interesting finding is the low level of caffeine in Oolong teas, especially in Fujian Oolong tea.

  8. Identification and chemical profiling of monacolins in red yeast rice using high-performance liquid chromatography with photodiode array detector and mass spectrometry.

    PubMed

    Li, Yong-Guo; Zhang, Fang; Wang, Zheng-Tao; Hu, Zhi-Bi

    2004-09-03

    Monascus purpureus-fermented rice (red yeast rice) was one of the food supplements that had the ability of lowering the blood-lipid levels, and monacolins have been proved to be main active constituents. In total 14 monacolin compounds such as monacolin K (mevinolin), J, L, M, X, and their hydroxy acid form, as well as dehydromonacolin K, dihydromonacolin L, compactin, 3alpha-hydroxy-3,5-dihydromonacolin L, etc. were identified in red yeast rice, using high-performance liquid chromatography with photodiode array detector and tandem mass spectrometry. A chemical fingerprint profiling method to display bioactive monacolins in red yeast rice was established and could be used for the quality control of the target material and its related products. Ten finish products labeled as red yeast rice from different manufacturers in marketing were traced using the chromatographic chemical profiling method, and the results show that only two of them were similar while the other eight were significantly different from the reference red yeast rice. All of these materials including raw material powder and finished products available were quantified and the contents of monacolins were calculated with reference of monacolin K (mevinolin) as the standard.

  9. Characterisation of chemical components for identifying historical Chinese textile dyes by ultra high performance liquid chromatography - photodiode array - electrospray ionisation mass spectrometer.

    PubMed

    Han, Jing; Wanrooij, Jantien; van Bommel, Maarten; Quye, Anita

    2017-01-06

    This research makes the first attempt to apply Ultra High Performance Liquid Chromatography (UHPLC) coupled to both Photodiode Array detection (PDA) and Electrospray Ionisation Mass Spectrometer (ESI-MS) to the chemical characterisation of common textile dyes in ancient China. Three different extraction methods, respectively involving dimethyl sulfoxide (DMSO)-oxalic acid, DMSO and hydrochloric acid, are unprecedentedly applied together to achieve an in-depth understanding of the chemical composition of these dyes. The first LC-PDA-MS database of the chemical composition of common dyes in ancient China has been established. The phenomena of esterification and isomerisation of the dye constituents of gallnut, gardenia and saffron, and the dye composition of acorn cup dyed silk are clarified for the first time. 6-Hydroxyrubiadin and its glycosides are first reported on a dyed sample with Rubia cordifolia from China. UHPLC-PDA-ESI-MS with a C18 BEH shield column shows significant advantages in the separation and identification of similar dye constituents, particularly in the cases of analysing pagoda bud and turmeric dyed sample extracts.

  10. Determination of plant hormones in fertilizers by high-performance liquid chromatography with photodiode array detection: method development and single-laboratory validation.

    PubMed

    Gambino, Grazia Laura; Pagano, Pietro; Scordino, Monica; Sabatino, Leonardo; Scollo, Emanuele; Traulo, Pasqualino; Gagliano, Giacomo

    2008-01-01

    A simple and reliable high-performance liquid chromatographic method that uses photodiode array detection was developed for the simultaneous determination of 12 native and synthetic plant hormones, i.e., plant growth regulators (PGRs), in fertilizers, such as 1-naphthol, 2,4-dichlorophenoxyacetic acid, 4-(2,4-dichlorophenoxy)butyric acid, 4-chlorophenoxyacetic acid, indole-3-acetic acid, 4-(3-indolyl)butyric acid, dichlorprop, (4-chloro-2-methylphenoxy)acetic acid, alpha-naphthaleneacetic acid, 1-naphthaleneacetamide, beta-naphthoxyacetic acid, and thidiazuron. The method was experimentally validated for routine regulatory application, and the following analytical parameters were assessed for all PGRs studied: linearity; specificity; precision (relative standard deviation) and accuracy, both measured at 3 concentration levels (0.1, 0.05, and 0.01%, w/w); ruggedness; limit of detection; and limit of quantification. Results were satisfactory for all method validation parameters tested and for all PGRs studied, demonstrating the suitability of the method for the determination of PGRs in fertilizers. The uncertainty of measurement was also estimated at 3 concentration levels for all PGRs by using the approach of the International Organization for Standardization, described in its Guide to the Expression of Uncertainty in Measurement. The method was applied to 20 samples of liquid fertilizer with declared biostimulant properties.

  11. Fingerprint analysis of Hibiscus mutabilis L. leaves based on ultra performance liquid chromatography with photodiode array detector combined with similarity analysis and hierarchical clustering analysis methods

    PubMed Central

    Liang, Xianrui; Ma, Meiling; Su, Weike

    2013-01-01

    Background: A method for chemical fingerprint analysis of Hibiscus mutabilis L. leaves was developed based on ultra performance liquid chromatography with photodiode array detector (UPLC-PAD) combined with similarity analysis (SA) and hierarchical clustering analysis (HCA). Materials and Methods: 10 batches of Hibiscus mutabilis L. leaves samples were collected from different regions of China. UPLC-PAD was employed to collect chemical fingerprints of Hibiscus mutabilis L. leaves. Results: The relative standard deviations (RSDs) of the relative retention times (RRT) and relative peak areas (RPA) of 10 characteristic peaks (one of them was identified as rutin) in precision, repeatability and stability test were less than 3%, and the method of fingerprint analysis was validated to be suitable for the Hibiscus mutabilis L. leaves. Conclusions: The chromatographic fingerprints showed abundant diversity of chemical constituents qualitatively in the 10 batches of Hibiscus mutabilis L. leaves samples from different locations by similarity analysis on basis of calculating the correlation coefficients between each two fingerprints. Moreover, the HCA method clustered the samples into four classes, and the HCA dendrogram showed the close or distant relations among the 10 samples, which was consistent to the SA result to some extent. PMID:23930008

  12. Determination of quinolones in animal tissues and eggs by high-performance liquid chromatography with photodiode-array detection.

    PubMed

    Gigosos, P G; Revesado, P R; Cadahía, O; Fente, C A; Vazquez, B I; Franco, C M; Cepeda, A

    2000-02-25

    A rapid, specific reversed-phase HPLC method is described, with solid-phase extraction, for assaying five quinolones (ciprofloxacin, difloxacin, enrofloxacin, norfloxacin and marbofloxacin) with confirmative diode-array detection in samples of bovine kidney, muscle and eggs. The least efficient extraction was marbofloxacin from kidney tissue (64%). The lower detection limit for each quinolone was: enrofloxacin and ciprofloxacin, 1 ng; norfloxacin and difloxacin, 2 ng; marbofloxacin, 4 ng injected. The intra-day relative standard deviations were lower than 7.9% and lower than 8.6% for inter-day assays. These results indicate that the developed method had an acceptable precision.

  13. Using Photodiodes in the Laboratory.

    ERIC Educational Resources Information Center

    Jenkins, T. E.

    1995-01-01

    Describes the most popular optical detector in the design of photodiode detector circuits. Discusses how a photodiode works, points to consider in the design of a photodiode, and photodiode hybrids. (AIM)

  14. Simultaneous determination of pseudoephedrine hydrochloride, chlorpheniramine maleate, and dextromethorphan hydrobromide by second-derivative photodiode array spectroscopy.

    PubMed

    Murtha, J L; Julian, T N; Radebaugh, G W

    1988-08-01

    The simultaneous determination of the active ingredients in multicomponent pharmaceutical products normally requires the use of a separation technique, such as HPLC or GC, followed by quantitation. Presented here is a rapid, validated, analytical method that does not require prior separation for the simultaneous determination of three drugs, pseudoephedrine hydrochloride, chlorpheniramine maleate, and dextromethorphan hydrobromide, in a tablet formulation. A diode array spectrophotometer, capable of multicomponent analysis, was used for the quantitation. The utility of this method was demonstrated in two ways: the analysis of a chewable pediatric tablet (formulation CP) containing 7.5 mg of pseudoephedrine hydrochloride, 0.5 mg of chlorpheniramine maleate, and 2.5 mg of dextromethorphan hydrobromide, and the dissolution analysis of a hydroxypropyl methylcellulose-based sustained-release tablet (formulation SR) containing 120 mg of pseudoephedrine hydrochloride, 8 mg of chlorpheniramine maleate, and 60 mg of dextromethorphan hydrobromide. The sensitivity of this assay is 7.5 micrograms/mL for pseudoephedrine hydrochloride, 1.0 micrograms/mL for chlorpheniramine maleate, and 5.0 micrograms/mL for dextromethorphan hydrobromide, using the second-derivative spectra of the absorbance with respect to wavelength. Determinations were made in 0.1 M sodium acetate buffer at pH 5.0 using a 1-cm quartz cell. Absorbance spectra, and their first and second derivatives, from 240 to 300 nm were used for the determination. The results obtained by this method compared favorably with the results obtained by a validated HPLC method.

  15. New silicon photodiodes for detection of the 1064nm wavelength radiation

    NASA Astrophysics Data System (ADS)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  16. [Determination of flavonol glycosides in tea samples by ultra-high performance liquid chromatography-photodiode array detection-tandem mass spectrometry].

    PubMed

    Wang, Zhicong; Sha, Yuebing; Yu, Xiaobo; Liang, Yuerong

    2015-09-01

    An ultra-high performance liquid chromatography-photodiode array detection-tandem mass spectrometry (UPLC-PDA-MS/MS) method was developed for the determination of flavonol glycosides in tea samples. The chromatographic separation was performed on an UPLC HSS T3 column by gradient elution with the mobile phases of acetonitrile and water both containing 0.1% (v/v) formic acid. A total of 15 flavonol glycosides which include 3 myricetin glycosides, 6 quercetin glycosides and 6 kaempferol glycosides were positively identified in green and black tea samples by comparing the retention times and mass spectra of the samples with standards and publications. The quantities of flavonol glycosides were relatively calculated with the stand- ard quercetin-3-rhamnosylglucoside (Q-GRh) which was calibrated with external quantification method using multi-reaction monitoring (MRM) mode. The results showed that there were different flavonol glycoside distributions in green tea and black tea. The total amount of flavonol glycosides in green tea was 1. 7 times of that in black tea. The major flavonol glycosides in green tea were myricetin-3-galactoside (M-Ga), myricetin-3-glucoside (M-G), quercetin-3-glucosyl-rhamnosyl-galactoside (Q-GaRhG), quercetin-3-glucosyl-rhamnosyl-glucoside (Q-GRhG), kaempferol-3-glucosyl-rhamnosyl-galactoside (K-GaRhG) and kaempferol-3-glucosyl- rhamnosyl-glucoside (K-GRhG), but for black tea, the major flavonol glycosides were quercetin-3-rhamnosylglucoside (Q-GRh), quercetin-3-glucoside (Q-G), kaempferol-3-rhamnosylglucoside (K-GRh) and kaempferol-3-galactoside (K-Ga). The present method is accurate, convenient for the rapid identification of flavonol glycosides and analysis of constituent distribution for green and black teas.

  17. Photodiode array to charged aerosol detector response ratio enables comprehensive quantitative monitoring of basic drugs in blood by ultra-high performance liquid chromatography.

    PubMed

    Viinamäki, Jenni; Ojanperä, Ilkka

    2015-03-20

    Quantitative screening for a broad range of drugs in blood is regularly required to assess drug abuse and poisoning within analytical toxicology. Mass spectrometry-based procedures suffer from the large amount of work required to maintain quantitative calibration in extensive multi-compound methods. In this study, a quantitative drug screening method for blood samples was developed based on ultra-high performance liquid chromatography with two consecutive detectors: a photodiode array detector and a corona charged aerosol detector (UHPLC-DAD-CAD). The 2.1 mm × 150 mm UHPLC column contained a high-strength silica C18 bonded phase material with a particle size of 1.8 μm, and the mobile phase consisted of methanol/0.1% trifluoroacetic acid in gradient mode. Identification was based on retention time, UV spectrum and the response ratio from the two detectors. Using historic calibration over a one-month period, the median precision (RSD) of retention times was 0.04% and the median accuracy (bias) of quantification 6.75%. The median precision of the detector response ratio over two orders of magnitude was 12%. The applicable linear ranges were generally 0.05-5 mg L(-1). The method was validated for 161 compounds, including antipsychotics, antidepressants, antihistamines, opioid analgesics, and adrenergic beta blocking drugs, among others. The main novelty of the method was the proven utility of the response ratio of DAD to CAD, which provided the additional identification efficiency required. Unlike with mass spectrometry, the high stability of identification and quantification allowed the use of facile historic calibration.

  18. Intelligent peak deconvolution through in-depth study of the data matrix from liquid chromatography coupled with a photo-diode array detector applied to pharmaceutical analysis.

    PubMed

    Arase, Shuntaro; Horie, Kanta; Kato, Takashi; Noda, Akira; Mito, Yasuhiro; Takahashi, Masatoshi; Yanagisawa, Toshinobu

    2016-10-21

    Multivariate curve resolution-alternating least squares (MCR-ALS) method was investigated for its potential to accelerate pharmaceutical research and development. The fast and efficient separation of complex mixtures consisting of multiple components, including impurities as well as major drug substances, remains a challenging application for liquid chromatography in the field of pharmaceutical analysis. In this paper we suggest an integrated analysis algorithm functioning on a matrix of data generated from HPLC coupled with photo-diode array detector (HPLC-PDA) and consisting of the mathematical program for the developed multivariate curve resolution method using an expectation maximization (EM) algorithm with a bidirectional exponentially modified Gaussian (BEMG) model function as a constraint for chromatograms and numerous PDA spectra aligned with time axis. The algorithm provided less than ±1.0% error between true and separated peak area values at resolution (Rs) of 0.6 using simulation data for a three-component mixture with an elution order of a/b/c with similarity (a/b)=0.8410, (b/c)=0.9123 and (a/c)=0.9809 of spectra at peak apex. This software concept provides fast and robust separation analysis even when method development efforts fail to achieve complete separation of the target peaks. Additionally, this approach is potentially applicable to peak deconvolution, allowing quantitative analysis of co-eluted compounds having exactly the same molecular weight. This is complementary to the use of LC-MS to perform quantitative analysis on co-eluted compounds using selected ions to differentiate the proportion of response attributable to each compound.

  19. Determination of eleutheroside E and eleutheroside B in rat plasma and tissue by high-performance liquid chromatography using solid-phase extraction and photodiode array detection.

    PubMed

    Feng, Shi lan; Hu, Fang di; Zhao, Jian Xiong; Liu, Xi; Li, Y'un

    2006-04-01

    A HPLC method with photodiode array detection (PDA) was developed for the determination and a pharmacokinetic study of eleutheroside E (ELU E) and eleutheroside B (ELU B) in rat plasma and tissue following an eleutherococcus injection. The analysis was performed on a Kromasil C18 column, using water-acetonitrile as the gradient mobile phase and 0.8 mL/min flow rate. Detection wavelengths of ELU E and ELU B were 220 and 206 nm, respectively. Protein from the biological sample was deposited using acetonitrile. ELU E and ELU B were extracted from the biological samples using acetonitrile, separated by solid-phase extraction, and eluted from the cartridge using 60% methanol. The extraction recovery of ELU E and ELU B was 91.2 and 88.8%, respectively. The limit of detection was 37.6 ng/mL for ELU E and 37.0 ng/mL for ELU B (S/N = 3) in plasma. Blood drug level-time cuvers of ELU E and ELU B in Wister rats following administration of an eleutherococcus injection into femoral vein were shown to fit a three-compartment model. The half-life (t1/2) was 4.662 h for ELU E and 2.494 h for ELU B. Following administration of a single eleutherococcus injection, the concentration of ELU E and ELU B in the tissue was Cliver > Ckidney > Cspleen > Cheart and Ckidney > Cliver > Cheart. We believe the method described in the present paper is accurate and reliable and can be used for pharmacokinetic studies of ELU E and ELU B in rats. In addition, the method for sample preparation, using solid phase extraction, is precise, simple and rapid.

  20. Determination of HT-2 and T-2 toxins in oats and wheat by ultra-performance liquid chromatography with photodiode array detection.

    PubMed

    Pascale, Michelangelo; Panzarini, Giuseppe; Visconti, Angelo

    2012-01-30

    European intake estimates indicate that the presence of HT-2 and T-2 toxins in cereals, mainly in oats, can be of concern for human health. Therefore, the development of sensitive, rapid and reliable methods for determining these mycotoxins in cereals, in particular oats, has high priority. A rapid ultra-performance liquid chromatographic (UPLC) method has been developed for the simultaneous determination of HT-2 and T-2 toxins in oats and wheat at μg kg(-1) level. Ground samples were extracted with methanol/water (90:10, v/v) and the diluted extracts were cleaned up through immunoaffinity columns. HT-2 and T-2 toxins were separated and quantified by UPLC with photodiode array (PDA) detector (λ=202 nm) in less than 5 min. Mean recoveries from blank oats samples spiked with HT-2 and T-2 toxins at levels of 50-1000 μg kg(-1) ranged from 87 to 96%, with relative standard deviations (RSDs) lower than 7%; mean recoveries from wheat spiked with HT-2 and T-2 toxins at levels of 25-100 μg kg(-1) ranged from 91 to 103%, with RSDs lower than 5%. The limit of detection of the method was 8 μg kg(-1) for both toxins (signal-to-noise ratio 3:1). The method was successfully applied to the analysis of HT-2 and T-2 toxins in naturally contaminated oats and wheat samples. A good correlation was found by comparative analysis of naturally contaminated samples of oats (r=0.9985) and wheat (r=0.9058) using the proposed method or a reliable HPLC method with fluorescence detection after pre-column derivatization with 1-anthroylnitrile.

  1. Identification and quantification of stilbenes in fruits of transgenic tomato plants (Lycopersicon esculentum Mill.) by reversed phase HPLC with photodiode array and mass spectrometry detection.

    PubMed

    Nicoletti, Isabella; De Rossi, Antonella; Giovinazzo, Giovanna; Corradini, Danilo

    2007-05-02

    Reversed-phase high-performance liquid chromatography (RP-HPLC) with photodiode array (PDA) and mass spectrometry (MS) detection was employed to study the accumulation of stilbenes and other naturally occurring polyphenol intermediates of flavonoid pathway in tomato fruits of plants genetically modified to synthesize resveratrol. The transgenic tomato fruits were obtained by overexpression of a grapevine gene encoding the enzyme stilbene synthase in tomato plants (Lycopersicon esculentum Mill.). Stilbenes and flavonoids, either glycosylated or free, were simultaneosly identified by electrospray interface (ESI)-MS in negative ionization mode and were quantified by PDA detection at the wavelength corresponding to their maximum absorbance. The two detectors were coupled online with an HPLC system utilizing a narrow-bore C18 reversed-phase column, which was eluted by a multistep gradient of increasing concentration of acetonitrile in water containing 0.5% (v/v) formic acid. The results of these analysis revealed that the genetic modification of the tomato plants originated different levels of accumulation of four stilbenes (i.e., trans- and cis-piceid and trans- and cis-resveratrol) in their fruit depending on the stages of ripening. Either at immature or at mature stages of ripening the stilbenes were preferentially accumulated in the fruit peel as the glycosylated form. The highest amount of trans-piceid and trans-resveratrol were found in the peel of fruits harvested at mature stage of ripening. The variations in the levels of rutin, naringenin, and chlorogenic acid found in the samples extracted from the fruits of transgenic tomato plants, in comparison to that determined in the control lines, seemed to be related to the genetic transformation, whose effect on the flavonoid biosynthetic pathway needs to be elucidated by additional studies.

  2. Relative detection efficiency of back- and front-illuminated charge-coupled device cameras for X-rays between 1 keV and 18 keV.

    PubMed

    Szlachetko, J; Dousse, J-Cl; Hoszowska, J; Berset, M; Cao, W; Szlachetko, M; Kavcic, M

    2007-09-01

    High-resolution x-ray measurements were performed with a von Hamos-type bent crystal spectrometer using for the detection of the diffracted photons either a back-illuminated charge-coupled device (CCD) camera or a front-illuminated one. For each CCD the main x-ray emission lines (e.g., Kalpha, Kbeta, Lalpha, and Lbeta) of a variety of elements were measured in order to probe the performances of the two detectors between 1 and 18 keV. From the observed x-ray lines the linearity of the energy response, the noise level, the energy resolution, and the quantum efficiency ratio of the two CCDs were determined.

  3. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  4. Gallium-based avalanche photodiode optical crosstalk

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  5. Two-way and three-way approaches to ultra high performance liquid chromatography-photodiode array dataset for the quantitative resolution of a two-component mixture containing ciprofloxacin and ornidazole.

    PubMed

    Dinç, Erdal; Ertekin, Zehra Ceren; Büker, Eda

    2016-09-01

    Two-way and three-way calibration models were applied to ultra high performance liquid chromatography with photodiode array data with coeluted peaks in the same wavelength and time regions for the simultaneous quantitation of ciprofloxacin and ornidazole in tablets. The chromatographic data cube (tensor) was obtained by recording chromatographic spectra of the standard and sample solutions containing ciprofloxacin and ornidazole with sulfadiazine as an internal standard as a function of time and wavelength. Parallel factor analysis and trilinear partial least squares were used as three-way calibrations for the decomposition of the tensor, whereas three-way unfolded partial least squares was applied as a two-way calibration to the unfolded dataset obtained from the data array of ultra high performance liquid chromatography with photodiode array detection. The validity and ability of two-way and three-way analysis methods were tested by analyzing validation samples: synthetic mixture, interday and intraday samples, and standard addition samples. Results obtained from two-way and three-way calibrations were compared to those provided by traditional ultra high performance liquid chromatography. The proposed methods, parallel factor analysis, trilinear partial least squares, unfolded partial least squares, and traditional ultra high performance liquid chromatography were successfully applied to the quantitative estimation of the solid dosage form containing ciprofloxacin and ornidazole.

  6. Electro-Optical Characteristics of P+n In0.53Ga0.47As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays

    NASA Astrophysics Data System (ADS)

    DeWames, R.; Littleton, R.; Witte, K.; Wichman, A.; Bellotti, E.; Pellegrino, J.

    2015-08-01

    This paper is concerned with focal plane array (FPA) data and use of analytical and three-dimensional numerical simulation methods to determine the physical effects and processes limiting performance. For shallow homojunction P+n designs the temperature dependence of dark current for T < 300 K depends on the intrinsic carrier concentration of the In0.53Ga0.47As material, implying that the dominant dark currents are generation and recombination (G-R) currents originating in the depletion regions of the double layer planar heterostructure (DLPH) photodiode. In the analytical model differences from bulk G-R behavior are modeled with a G-R like perimeter-dependent shunt current conjectured to originate at the InP/InGaAs interface. In this description the fitting property is the effective conductivity, σ eff( T), in mho cm-1. Variation in the data suggests σ eff (300 K) values of 1.2 × 10-11-4.6 × 10-11 mho cm-1). Substrate removal extends the quantum efficiency (QE) spectral band into the visible region. However, dead-layer effects limit the QE to 10% at a wavelength of 0.5 μm. For starlight-no moon illumination conditions, the signal-to-noise ratio is estimated to be 50 at an operating temperature of 300 K. A major result of the 3D numerical simulation of the device is the prediction of a perimeter G-R current not associated with the properties of the metallurgical interface. Another is the prediction that for a junction positioned in the larger band gap InP cap layer the QE is bias-dependent and that a relatively large reverse bias ≥0.9 V is needed for the QE to saturate to the shallow homojunction value. At this higher bias the dark current is larger than the shallow homojunction value. The 3D numerical model and the analytical model agree in predicting and explaining the measured radiatively limited diffusion current originating at the n-side of the junction. The calculations of the area-dependent G-R current for the condition studied are also in agreement

  7. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

    SciTech Connect

    Filatov, D. O.; Gorshkov, A. P.; Volkova, N. S.; Guseinov, D. V.; Alyabina, N. A.; Ivanova, M. M.; Chalkov, V. Yu.; Denisov, S. A.; Shengurov, V. G.

    2015-03-15

    We investigate the photosensitivity spectra of photodiodes based on Si p-i-n structures with single-layered and multilayer self-assembled GeSi/Si(001) nanoisland arrays in the i region, which are grown using a technique combining Si molecular-beam epitaxy and Ge vapor-phase epitaxy, in dependence on the temperature, diode bias, and GeSi nanoisland parameters. We show that the temperature and field dependences of the diode photosensitivity in the spectral range of the interband optical absorption in GeSi nanoislands are determined by the ratio between the rate of emission of photoexcited holes from the nanoislands and the rate of the recombination of excess carriers in them. We demonstrate the possibility of determination of the hole recombination lifetime in GeSi nanoislands from the temperature and field dependences of the photosensitivity.

  8. Phytochemical and morphological characterization of hop (Humulus lupulus L.) cones over five developmental stages using high performance liquid chromatography coupled to time-of-flight mass spectrometry, ultrahigh performance liquid chromatography photodiode array detection, and light microscopy techniques.

    PubMed

    Kavalier, Adam R; Litt, Amy; Ma, Chunhui; Pitra, Nicholi J; Coles, Mark C; Kennelly, Edward J; Matthews, Paul D

    2011-05-11

    Hop (Humulus lupulus L.) inflorescences, commonly known as "hop cones", are prized for their terpenophenolic contents, used in beer production and, more recently, in biomedical applications. In this study we investigated morphological and phytochemical characteristics of hop cones over five developmental stages, using liquid chromatography coupled to time-of-flight mass spectrometry (LC-TOF-MS), and ultrahigh performance liquid chromatography photodiode array detection (UHPLC-PDA) methods to quantitate 21 polyphenolics and seven terpenophenolics. Additionally, we used light microscopy to correlate phytochemical quantities with changes in the morphology of the cones. Significant increases in terpenophenolics, concomitant with glandular trichome development and associated gross morphological changes, were mapped over development to fluctuations in contents of polyphenolic constituents and their metabolic precursor compounds. The methods reported here can be used for targeted metabolic profiling of flavonoids, phenolic acids, and terpenophenolics in hops, and are applicable to quantitation in other crops.

  9. A polychromator-type near-infrared spectrometer with a high-sensitivity and high-resolution photodiode array detector for pharmaceutical process monitoring on the millisecond time scale

    NASA Astrophysics Data System (ADS)

    Murayama, Kodai; Genkawa, Takuma; Ishikawa, Daitaro; Komiyama, Makoto; Ozaki, Yukihiro

    2013-02-01

    In the fine chemicals industry, particularly in the pharmaceutical industry, advanced sensing technologies have recently begun being incorporated into the process line in order to improve safety and quality in accordance with process analytical technology. For estimating the quality of powders without preparation during drug formulation, near-infrared (NIR) spectroscopy has been considered the most promising sensing approach. In this study, we have developed a compact polychromator-type NIR spectrometer equipped with a photodiode (PD) array detector. This detector is consisting of 640 InGaAs-PD elements with 20-μm pitch. Some high-specification spectrometers, which use InGaAs-PD with 512 elements, have a wavelength resolution of about 1.56 nm when covering 900-1700 nm range. On the other hand, the newly developed detector, having the PD with one of the world's highest density, enables wavelength resolution of below 1.25 nm. Moreover, thanks to the combination with a highly integrated charge amplifier array circuit, measurement speed of the detector is higher by two orders than that of existing PD array detectors. The developed spectrometer is small (120 mm × 220 mm × 200 mm) and light (6 kg), and it contains various key devices including the high-density and high-sensitivity PD array detector, NIR technology, and spectroscopy technology for a spectroscopic analyzer that has the required detection mechanism and high sensitivity for powder measurement, as well as a high-speed measuring function for blenders. Moreover, we have evaluated the characteristics of the developed NIR spectrometer, and the measurement of powder samples confirmed that it has high functionality.

  10. Sensitive chiral high-performance liquid chromatographic determination of anthelmintic flubendazole and its phase I metabolites in blood plasma using UV photodiode-array and fluorescence detection Application to pharmacokinetic studies in sheep.

    PubMed

    Nobilis, Milan; Vybíralová, Zuzana; Krízová, Veronika; Kubícek, Vladimír; Soukupová, Marie; Lamka, Jirí; Szotáková, Barbora; Skálová, Lenka

    2008-12-01

    Although benzimidazole anthelmintic flubendazole, methyl ester of [5-(4-fluorobenzoyl)-1H-benzimidazol-2-yl]carbamic acid, is extensively used in veterinary and human medicine for the treatment of gastrointestinal parasitic helminth infections, reliable data about its pharmacokinetics in various species have not been reported. Our previous work [M. Nobilis, Th. Jira, M. Lísa, M. Holcapek, B. Szotáková, J. Lamka, L.Skálová, J. Chromatogr. A 1149 (2007) 112-120] had described the stereospecificity of carbonyl reduction during phase I metabolic experiments in vitro. For in vivo pharmacokinetic studies, further improvement and optimization of bioanalytical HPLC method in terms of sensitivity and selectivity was necessary. Hence, a modified chiral bioanalytical HPLC method involving both UV photodiode-array and fluorescence detection for the determination of flubendazole, both enantiomers of reduced flubendazole and hydrolyzed flubendazole in the extracts from plasma samples was tested and validated. Albendazole was used as an internal standard. Sample preparation process involved a pH-dependent extraction of the analytes from the blood plasma into tert-butylmethyl ether. Chromatographic separations were performed on a Chiralcel OD-R 250 mm x 4.6mm column with mobile phase methanol-1M NaClO(4) (75:25, v/v) at the flow rate 0.5 ml min(-1). In quantitation, selective UV absorption maxima of 290 nm (for reduced flubendazole), 295 nm (for albendazole), 310 nm (for flubendazole) and 330 nm (for hydrolyzed flubendazole) were used in the UV photodiode-array detection, and lambda(exc.)/lambda(emis.)=228 nm/310 nm (for reduced flubendazole) and lambda(exc.)/lambda(emis.)=236 nm/346 nm (for albendazole) were set on the fluorescence detector. The fluorescence detection was approximately 10-times more sensitive than the UV detection. Each HPLC run lasted 27 min. The validated chiral HPLC-PDA-FL method was employed in the pharmacokinetic studies of flubendazole in sheep. The

  11. A 1.5k x 1.5k class photon counting HgCdTe linear avalanche photo-diode array for low background space astronomy in the 1-5micron infrared

    NASA Astrophysics Data System (ADS)

    Hall, Donald

    Under a current award, NASA NNX 13AC13G "EXTENDING THE ASTRONOMICAL APPLICATION OF PHOTON COUNTING HgCdTe LINEAR AVALANCHE PHOTODIODE ARRAYS TO LOW BACKGROUND SPACE OBSERVATIONS" UH has used Selex SAPHIRA 320 x 256 MOVPE L-APD HgCdTe arrays developed for Adaptive Optics (AO) wavefront (WF) sensing to investigate the potential of this technology for low background space astronomy applications. After suppressing readout integrated circuit (ROIC) glow, we have placed upper limits on gain normalized dark current of 0.01 e-/sec at up to 8 volts avalanche bias, corresponding to avalanche gain of 5, and have operated with avalanche gains of up to several hundred at higher bias. We have also demonstrated detection of individual photon events. The proposed investigation would scale the format to 1536 x 1536 at 12um (the largest achievable in a standard reticule without requiring stitching) while incorporating reference pixels required at these low dark current levels. The primary objective is to develop, produce and characterize a 1.5k x 1.5k at 12um pitch MOVPE HgCdTe L-APD array, with nearly 30 times the pixel count of the 320 x 256 SAPHIRA, optimized for low background space astronomy. This will involve: 1) Selex design of a 1.5k x 1.5k at 12um pitch ROIC optimized for low background operation, silicon wafer fabrication at the German XFab foundry in 0.35 um 3V3 process and dicing/test at Selex, 2) provision by GL Scientific of a 3-side close-buttable carrier building from the heritage of the HAWAII xRG family, 3) Selex development and fabrication of 1.5k x 1.5k at 12 um pitch MOVPE HgCdTe L-APD detector arrays optimized for low background applications, 4) hybridization, packaging into a sensor chip assembly (SCA) with initial characterization by Selex and, 5) comprehensive characterization of low background performance, both in the laboratory and at ground based telescopes, by UH. The ultimate goal is to produce and eventually market a large format array, the L

  12. Determination and purification of sesamin and sesamolin in sesame seed oil unsaponified matter using reversed-phase liquid chromatography coupled with photodiode array and tandem mass spectrometry and high-speed countercurrent chromatography.

    PubMed

    Takahashi, Miki; Nishizaki, Yuzo; Sugimoto, Naoki; Takeuchi, Hiroaki; Nakagawa, Kazuya; Akiyama, Hiroshi; Sato, Kyoko; Inoue, Koichi

    2016-10-01

    In Asian countries, sesame seed oil unsaponified matter is used as a natural food additive due to its associated antioxidant effects. We determined and purified the primary lignans sesamin and sesamolin in sesame seed oil unsaponified matter using reversed-phase liquid chromatography coupled with photodiode array and tandem mass spectrometry and high-speed countercurrent chromatography. Calibration curves showed good correlation coefficients (r(2) > 0.999, range 0.08 and/or 0.15 to 5 μg/mL) with a limit of detection (at 290 nm) of 0.02 μg/mL for sesamin and 0.04 μg/mL for sesamolin. Sesame seed oil unsaponified matter contained 2.82% sesamin and 2.54% sesamolin, respectively. Direct qualitative analysis of sesamin and sesamolin was achieved using quadrupole mass spectrometry with positive-mode electrospray ionization. Pure (>99%) sesamin and sesamolin standards were obtained using high-speed countercurrent chromatographic purification (hexane/ethyl acetate/methanol/water; 7:3:7:3). An effective method for determining and purifying sesamin and sesamolin from sesame seed oil unsaponified matter was developed by combining these separation techniques for standardized food additives.

  13. Characterization and identification of the chemical constituents from tartary buckwheat (Fagopyrum tataricum Gaertn) by high performance liquid chromatography/photodiode array detector/linear ion trap FTICR hybrid mass spectrometry.

    PubMed

    Ren, Qiang; Wu, Caisheng; Ren, Yan; Zhang, Jinlan

    2013-02-15

    In recent years tartary buckwheat has become popular healthful food due to its antioxidant, antidiabetic and antitumor activities. However, its chemical constituents have not yet been fully characterized and identified. In this paper, a novel high performance liquid chromatography coupled with photodiode array detector and linear ion trap FTICR hybrid mass spectrometry (HPLC-PDA/LTQ-FTICRMS) method was established to characterize and identify a total of 36 compounds by a single run. The retention time, maximum UV absorption wavelength, accurate mass weight and characteristic fragment ions were collected on line. To confirm the structures, 11 compounds were isolated and identified by MS and NMR experiments. 1, 3, 6, 6'-tetra-feruloyl sucrose named taroside was a new phenlypropanoid glycoside, together with 3, 6-di-p-coumaroyl-1, 6'-di-feruloyl sucrose, 1, 6, 6'-tri-feruloyl-3-p-coumaroyl sucrose, N-trans-feruloyltyramine and quercetin-3-O-[β-D-xyloxyl-(1→2)-α-L-rhamnoside] were isolated for the first time from the Fagopyrum species. The research enriched the chemical information of tartary buckwheat.

  14. 2.5-μm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

    NASA Astrophysics Data System (ADS)

    Jurczak, Pamela; Sablon, Kimberly A.; Gutiérrez, Marina; Liu, Huiyun; Wu, Jiang

    2017-03-01

    In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 μm, making them highly suitable for short-wavelength infrared applications.

  15. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

    SciTech Connect

    Wang Guoping; Chu Sheng; Zhan Ning; Liu Jianlin; Lin Yuqing; Chernyak, Leonid

    2011-01-24

    ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  16. Comparison of Stability-Indicating LC Methods Using Light Scattering and Photodiode Array Detection with Monolithic Column for Determination of Quinapril and Hydrochlorothiazide.

    PubMed

    de Diego, Marta; Godoy, Ricardo; Mennickent, Sigrid; Vergara, Carola; Charnock, Henry; Hernández, Camilo

    2016-09-01

    Rapid stability-indicating LC methods for simultaneous analysis of quinapril and hydrochlorothiazide were developed, validated and compared using evaporative light scattering detection (ELSD) and diode array detection (DAD). For the separation of quinapril, hydrochlorothiazide and its major degradation products, a monolithic column was used and the analytes were eluted within 7 min, applying gradient mobile phase in both methods. Quinapril was subjected to hydrolytic, oxidative, thermal, humidity and photolytic stress conditions. Degradation products were well resolved from main peaks and from each other, proving the stability-indicating power of the methods. The response with DAD was linear and the response with ELSD was fitted to a power function, for quinapril and hydrochlorothiazide concentrations of 20-160 and 12.5-100 µg mL(-1), respectively. DAD method achieved better precision than ELSD method, the LOQ of DAD was lower and the accuracy of the methods was similar. Quinapril degrade by hydrolysis and thermal stress, showing the formation of quinaprilat and quinapril diketopiperazine as degradants, which were identified by MS-MS. The methods were successfully applied to quantify quinapril and hydrochlorothiazide in commercial tablets. LC-DAD and LC-ELSD methods are suitable to assess the stability and routine analysis of quinapril and hydrochlorothiazide in pharmaceutical industry.

  17. Simultaneous determination of vitexin-2"-O-glucoside, vitexin-2"-O-rhamnoside, rutin, and hyperoside in the extract of hawthorn (Crataegus pinnatifida Bge.) leaves by RP-HPLC with ultraviolet photodiode array detection.

    PubMed

    Cheng, Shan; Qiu, Feng; Huang, Jia; He, Junqi

    2007-03-01

    RP-HPLC with UV photodiode array detection (UV-DAD) was developed and validated for the simultaneous determination of vitexin-2"-O-glucoside, vitexin-2"-O-rhamnoside, rutin, and hyperoside in the extract of hawthorn (Crataegus pinnatifida Bge.) leaves. The analytes of interest were separated on a Diamonsil C18 column (250 x 4.6 mm id, 5 microm) with the mobile phase consisting of THF/ACN/methanol/ 0.05% phosphoric acid solution (pH 5.0) (18:1:1:80 v/vl/v). The flow rate was set at 1.0 mL/min and the eluent was detected at 340 nm for the four flavonoids. The method was linear over the studied range of 1.00-100 microg/mL for the four analytes of interest with the correlation coefficient for each analyte greater than 0.999. The LOD and LOQwere 0.03 and 0.10 microg/mL, 0.03 and 0.10 microg/mL, 0.05 and 0.15 pg/mL, 0.10 and 0.30 microg/mL for vitexin-2"-O-glucoside, vitexin-2"-0-rhamnoside, rutin, and hyperoside, respectively. The optimized method was successfully applied to the analysis of four important flavonoids in the extract of hawthorn leaves. The total amounts of the four flavonoids were 22.2, 62.3, 4.27, and 8.24 mg/g dry weight for vitexin-2"-O-glucoside, vitexin-2"-O-rhamnoside, rutin, and hyperoside in the extract of hawthorn leaves, respectively.

  18. An improved high performance liquid chromatography-photodiode array detection-atmospheric pressure chemical ionization-mass spectrometry method for determination of chlorophylls and their derivatives in freeze-dried and hot-air-dried Rhinacanthus nasutus (L.) Kurz.

    PubMed

    Kao, Tsai Hua; Chen, Chia Ju; Chen, Bing Huei

    2011-10-30

    Rhinacanthus nasutus (L.) Kurz, a traditional Chinese herb possessing antioxidant and anti-cancer activities, has been reported to contain functional components like carotenoids and chlorophylls. However, the variety and amount of chlorophylls remain uncertain. The objectives of this study were to develop a high performance liquid chromatography-photodiode array detection-atmospheric pressure chemical ionization-mass spectrometry (HPLC-DAD-APCI-MS) method for determination of chlorophylls and their derivatives in hot-air-dried and freeze-dried R. nasutus. An Agilent Eclipse XDB-C18 column and a gradient mobile phase composed of methanol/N,N-dimethylformamide (97:3, v/v), acetonitrile and acetone were employed to separate internal standard zinc-phthalocyanine plus 12 cholorophylls and their derivatives within 21 min, including chlorophyll a, chlorophyll a', hydroxychlorophyll a, 15-OH-lactone chlorophyll a, chlorophyll b, chlorophyll b', hydroxychlorophyll b, pheophytin a, pheophytin a', hydroxypheophytin a, hydroxypheophytin a' and pheophytin b in hot-air-dried R. nasutus with flow rate at 1 mL/min and detection at 660 nm. But, in freeze-dried R. nasutus, only 4 chlorophylls and their derivatives, including chlorophyll a, chlorophyll a', chlorophyll b and pheophytin a were detected. Zinc-phthalocyanine was found to be an appropriate internal standard to quantify all the chlorophyll compounds. After quantification by HPLC-DAD, both chlorophyll a and pheophytin a were the most abundant in hot-air-dried R. nasutus, while in freeze-dried R. nasutus, chlorophyll a and chlorophyll b dominated.

  19. Simultaneous determination of three diarylheptanoids and an alpha-tetralone derivative in the green walnut husks (Juglans regia L.) by high-performance liquid chromatography with photodiode array detector.

    PubMed

    Liu, Junxi; Meng, Min; Li, Chen; Huang, Xinyi; Di, Duolong

    2008-05-09

    By optimizing extraction, separation and analytical conditions, a reliable and accurate high-performance liquid chromatographic (HPLC) method coupled with photodiode array detector (DAD) at room temperature is developed for simultaneous determination of three diarylheptanoids (juglanin A, juglanin B, rhoiptelol) and an alpha-tetralone derivative (regiolone) in methanol extracts from the green walnut husks (Juglans regia L.) The sample pretreatment process involved the reflux extraction using methanol as the extract with a ratio of liquor to sample of 15 mL/g. The separation was achieved on a SinoChrom ODS-AP C(18) column with gradient elution using acetonitrile and 2% (v/v) acetic acid in water. The intra-day and inter-day precision (RSD%) for the analytes ranged from 1.08 to 1.51 and 0.60 to 1.13, respectively. The average recoveries obtained were from 88.4% to 96.2% for the analytes with RSDs below 3.13%. The correlation coefficients of the calibration curve exceeded 0.999. The detection limits were 0.51, 0.25, 0.32 and 0.35 ng at a signal-to-noise ratio of 3, respectively. Quantitative analyses of the samples from different grown sites and in obtained different months showed that the contents of the analytes varied significantly. The method was then successfully applied for the detection and isolation of a new diarylheptanoid derivative in the green walnut husks (J. regia L.). The structure of the new compound was elucidated by various spectroscopic methods including 2D NMR techniques (COSY, HMQC, HMBC), HR-ESI-MS and X-ray single-crystal diffraction analysis.

  20. Determination of selected water-soluble vitamins using hydrophilic chromatography: a comparison of photodiode array, fluorescence, and coulometric detection, and validation in a breakfast cereal matrix.

    PubMed

    Langer, Swen; Lodge, John K

    2014-06-01

    Water-soluble vitamins are an important class of compounds that require quantification from food sources to monitor nutritional value. In this study we have analysed six water-soluble B vitamins ([thiamine (B1), riboflavin (B2), nicotinic acid (B3, NAc), nicotinamide (B3, NAm), pyridoxal (B6), folic acid (B9)], and ascorbic acid (vit C) with hydrophilic interaction liquid chromatography (HILIC), and compared UV, fluorescent (FLD) and coulometric detection to optimise a method to quantitate the vitamins from food sources. Employing UV/diode array (DAD) and fluorimetric detection, six B vitamins were detected in a single run using gradient elution from 100% to 60% solvent B [10mM ammonium acetate, pH 5.0, in acetonitrile and water 95:5 (v:v)] over 18 min. UV detection was performed at 268 nm for B1, 260 nm for both B3 species and 284 nm for B9. FLD was employed for B2 at excitation wavelength of 268 nm, emission of 513 nm, and 284 nm/317 nm for B6. Coulometric detection can be used to detect B6 and B9, and vit C, and was performed isocratically at 75% and 85% of solvent B, respectively. B6 was analysed at a potential of 720 mV, while B9 was analysed at 600 mV, and vit C at 30 mV. Retention times (0.96 to 11.81 min), intra-day repeatability (CV 1.6 to 3.6), inter-day variability (CV 1.8 to 11.1), and linearity (R 0.9877 to 0.9995) remained good under these conditions with limits of detection varying from 6.6 to 164.6 ng mL(-1), limits of quantification between 16.8 and 548.7 ng mL(-1). The method was successfully applied for quantification of six B vitamins from a fortified food product and is, to our knowledge, the first to simultaneously determine multiple water-soluble vitamins extracted from a food matrix using HILIC.

  1. Reversed-phase high-performance Liquid Chromatography-ultraviolet Photodiode Array Detector Validated Simultaneous Quantification of six Bioactive Phenolic Acids in Roscoea purpurea Tubers and their In vitro Cytotoxic Potential against Various Cell Lines

    PubMed Central

    Srivastava, Sharad; Misra, Ankita; Kumar, Dharmesh; Srivastava, Amit; Sood, Anil; Rawat, AKS

    2015-01-01

    Background: Roscoea purpurea or Roscoea procera Wall. (Zingiberaceae) is traditionally used for nutrition and in the treatment of various ailments. Objective: Simultaneous reversed-phase high-performance liquid chromatography-ultraviolet (RP-HPLC) photodiode array detector identification of phenolic acids (PA's) was carried out in whole extract of tuber and their cytotoxic potential was estimated along with radical scavenging action. Bioactivity guided fractionation was also done to check the response potential against the same assay. Materials and Methods: Identification and method validation was performed on RP-HPLC column and in vitro assays were used for bioactivity. Results: Protocatechuic acid, syringic acid, ferulic acid, rutin, apigenin, and kaempferol were quantified as 0.774%, 0.064%, 0.265%, 1.125%, 0.128%, and 0.528%, respectively. Validated method for simultaneous determination of PA's was found to be accurate, reproducible, and linearity was observed between peak area response and concentration. Recovery of identified PA's was within the acceptable limit of 97.40–104.05%. Significant pharmacological response was observed in whole extract against in vitro cytotoxic assay, that is, Sulforhodamine B assay, however, fractionation results in decreased action potential. Similar pattern of results were observed in the antioxidant assay, as total phenolic content and total flavonoid content were highest in whole extract and decreases with fractionation. Radical scavenging activity was prominent in chloroform fraction, exhibiting IC50 at 0.25 mg/mL. Conclusion: Study, thus, reveals that R. purpurea exhibit significant efficacy in cytotoxic activity with the potentiality of scavenging free radicals due the presence of PA's as reported through RP-HPLC. SUMMARY Proto-catechuic acid, syringic acid, ferulic acid, rutin, apigenin and kaempferol were quantified as 0.774, 0.064, 0.265, 1.125, 0.128 and 0.528 %Preliminary cytotoxic activity revealed that whole

  2. Dark current study for CMOS fully integrated-PIN-photodiodes

    NASA Astrophysics Data System (ADS)

    Teva, Jordi; Jessenig, Stefan; Jonak-Auer, Ingrid; Schrank, Franz; Wachmann, Ewald

    2011-05-01

    PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices and pulse oximeters for medical applications. The possibility to combine and to integrate the fabrication of the sensor with its signal conditioning circuitry in a CMOS process allows device miniaturization in addition to enhance its properties lowering the production and assembly costs. This paper presents the design and characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low impurity substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices with a minimum dark current. The dark current is studied, analyzed and measured for two different starting materials and for different geometries. A model previously proposed is reviewed and compared with experimental data.

  3. Gathering effect on dark current for CMOS fully integrated-, PIN-photodiodes

    NASA Astrophysics Data System (ADS)

    Teva, Jordi; Jonak-Auer, Ingrid; Schrank, Franz; Kraft, Jochen; Siegert, Joerg; Wachmann, Ewald

    2010-02-01

    PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices, and pulse oximeters. The possibility to combine and to integrate the fabrication of the sensor with its signal conditioning circuitry in a CMOS process flow opens the window to device miniaturization enhancing its properties and lowering the production and assembly costs. This paper presents the design and characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low impurity float zone substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices with a minimum dark current. The photodiodes in the array are isolated by a guard ring consisting of a n+-p+ diffusions. However, the introduction of the guard ring design, necessary for photodiode-to-photodiode isolation, leads to an increase of the photodiodes dark current. In this article, the new parasitic term on the dark current is identified, formulated, modelled and experimental proven and has finally been used for an accurate design of the guard ring.

  4. Si(1-x)Ge(x)/Si Infrared Photodiodes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

  5. Breadboard linear array scan imager program

    NASA Technical Reports Server (NTRS)

    1975-01-01

    The performance was evaluated of large scale integration photodiode arrays in a linear array scan imaging system breadboard for application to multispectral remote sensing of the earth's resources. Objectives, approach, implementation, and test results of the program are presented.

  6. Photodiode circuits for retinal prostheses.

    PubMed

    Loudin, J D; Cogan, S F; Mathieson, K; Sher, A; Palanker, D V

    2011-10-01

    Photodiode circuits show promise for the development of high-resolution retinal prostheses. While several of these systems have been constructed and some even implanted in humans, existing descriptions of the complex optoelectronic interaction between light, photodiode, and the electrode/electrolyte load are limited. This study examines this interaction in depth with theoretical calculations and experimental measurements. Actively biased photoconductive and passive photovoltaic circuits are investigated, with the photovoltaic circuits consisting of one or more diodes connected in series, and the photoconductive circuits consisting of a single diode in series with a pulsed bias voltage. Circuit behavior and charge injection levels were markedly different for platinum and sputtered iridium-oxide film (SIROF) electrodes. Photovoltaic circuits were able to deliver 0.038 mC/cm(2) (0.75 nC/phase) per photodiode with 50- μm platinum electrodes, and 0.54-mC/cm(2) (11 nC/phase) per photodiode with 50-μ m SIROF electrodes driven with 0.5-ms pulses of light at 25 Hz. The same pulses applied to photoconductive circuits with the same electrodes were able to deliver charge injections as high as 0.38 and 7.6 mC/cm(2) (7.5 and 150 nC/phase), respectively. We demonstrate photovoltaic stimulation of rabbit retina in-vitro, with 0.5-ms pulses of 905-nm light using peak irradiance of 1 mW/mm(2). Based on the experimental data, we derive electrochemical and optical safety limits for pixel density and charge injection in various circuits. While photoconductive circuits offer smaller pixels, photovoltaic systems do not require an external bias voltage. Both classes of circuits show promise for the development of high-resolution optoelectronic retinal prostheses.

  7. Recent advances in organic photodiodes (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kippelen, Bernard; Khan, Talha M.; Fuentes-Hernandez, Canek; Diniz, Larissa; Lukens, Julia M.; Larrain, Felipe

    2016-09-01

    Although the detection of photons is ubiquitous, man-made photon detectors still limits the effectiveness of applications such as light/laser detection, photography, astronomy, quantum information science, medical imaging, microscopy, communications, and others. The performance of the technologically most advanced detectors based on CMOS semiconductor technology has improved during the last decades but at the detriment of increased complexity, higher cost, limited portability and compactness, and limited area. On the other hand, nature has produced a relatively simple detector with remarkable properties: the human eye. The exploration of new paradigms in photon detection using new material platforms might therefore provide a path to further challenge the frontiers of applications enabled by light. In this talk, we will report on the realization of solution-processed organic semiconductor visible spectrum photodetectors with a high specific detectivity above 1014 Jones, at least an order of magnitude larger than values found in photodiodes based on silicon. These detectors demonstrate a sub-pA current under reverse bias in the dark, making them suitable for detecting very low levels of light. The small dark current under reverse bias allows the characterization of these devices over 9 orders of magnitude of increasing light irradiance. The detectors are based on the device structure: tin-doped indium oxide / ethoxylated polyethylenimine / poly(3-hexylthiophene) : indene C60 bisadduct / molybdenum oxide / silver and present a path toward fabrication on flexible substrates. We will show that these detectors can operate over a large dynamic range in the self-powered photovoltaic mode where the light produces a photovoltage that can be measured directly without any external bias source. We believe that large-area flexible photodetectors with detectivity values comparable to or better than those displayed by silicon-based photodiodes will enable a wide variety of

  8. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    NASA Technical Reports Server (NTRS)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  9. Silicon photodiode characterization from 1 eV to 10 keV

    SciTech Connect

    Idzorek, G.C.; Bartlett, R.J.

    1997-10-01

    Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors have assembled individually filtered photodiodes into an array designated the XUV-7. The XUV-7 provides seven photodiodes in a vacuum leak tight, electrically isolated, low noise, high bandwidth, x-ray filtered assembly in a compact package with a 3.7 cm outside diameter. In addition they have assembled the diodes in other custom configurations as detectors for spectrometers. Their calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds. Silicon photodiodes have proven to be a versatile and useful complement to the standard photocathode detectors for soft x-ray measurement and are very competitive with diamond for a number of applications.

  10. Multichannel intensified photodiode for near infrared single photon detection

    NASA Astrophysics Data System (ADS)

    Aebi, Verle W.; Sykora, Derek F.; Jurkovic, Michael J.; Costello, Kenneth A.

    2011-05-01

    An overview of the Intensified Photodiode (IPD) is presented with an emphasis on IPDs optimized for use in the 950nm to 1350nm spectral range for single photon detection applications. The theory of operation of the IPD, two different electron optics designs, and device performance for a multichannel, 4x4 pixel array, low jitter IPD optimized for operation at 1060nm are presented in this paper. Key results include greater than 15% quantum efficiency, large active area, and less than 550ps impulse response.

  11. Avalanche photodiodes for anticoincidence detectors

    NASA Astrophysics Data System (ADS)

    Cirignano, Leonard J.; Farrell, Richard; Redus, Robert H.; Squillante, Michael R.; Hunter, Stanley D.; Cuddapah, Rajani; Mukherjee, Reshmi

    1996-10-01

    Anticoincidence detectors are required for a variety of satellite instruments, including high energy gamma-ray telescopes, in order to differentiate ambient background radiation from signals of interest. Presently, most anticoincidence systems use scintillators coupled to photomultiplier tubes. We have demonstrated that it is now possible to use very high gain solid state avalanche photodiodes (APDs) as photodetectors for this application. A single APD coupled to a 30 cm multiplied by 30 cm multiplied by 0.95 cm plastic scintillator tile demonstrated 100% detection efficiency for minimum ionizing particles, with a low false positive rate. Multiple APDs enhance the signal to noise ratio in addition to providing redundancy. Relative to PMTs, APDs are compact, low power, and mechanically robust devices. Ground test data of APDs for anticoincidence shields is presented.

  12. Organic photodiodes for biosensor miniaturization.

    PubMed

    Wojciechowski, Jason R; Shriver-Lake, Lisa C; Yamaguchi, Mariko Y; Füreder, Erwin; Pieler, Roland; Schamesberger, Martin; Winder, Christoph; Prall, Hans Jürgen; Sonnleitner, Max; Ligler, Frances S

    2009-05-01

    Biosensors have successfully demonstrated the capability to detect multiple pathogens simultaneously at very low levels. Miniaturization of biosensors is essential for use in the field or at the point of care. While microfluidic systems reduce the footprint for biochemical processing devices and electronic components are continually becoming smaller, optical components suitable for integration--such as LEDs and CMOS chips--are generally still too expensive for disposable components. This paper describes the integration of polymer diodes onto a biosensor chip to create a disposable device that includes both the detector and the sensing surface coated with immobilized capture antibody. We performed a chemiluminescence immunoassay on the OPD substrate and measured the results using a hand-held reader attached to a laptop computer. The miniaturized biosensor with the disposable slide including the organic photodiode detected Staphylococcal enterotoxin B at concentrations as low as 0.5 ng/mL.

  13. Reduction of Photodiode Nonlinearities by Adaptive Biasing

    DTIC Science & Technology

    2016-10-14

    NONLINEARITY In principle, the photodiode is a linear device. That is, each incident photon has a high probability of creating an electron- hole pair in...that the photodiode efficiently harvests electron- hole pairs created by ab- sorbed photons.1 For a given incident optical signal, the carrier pairs...1.9GHz (dashed colors). For comparison, the RF powers were scaled for variations in current, and the lower power tones were shifted by 37.9 dBm. A black

  14. Photodiode-Based, Passive Ultraviolet Dosimeters

    NASA Technical Reports Server (NTRS)

    Vaughn, Jason A.; Gray, Perry

    2004-01-01

    Simple, passive instruments have been developed for measuring the exposure of material specimens to vacuum ultraviolet (VUV) radiation from the Sun. Each instrument contains a silicon photodiode and a coulometer. The photocharge generated in the photodiode is stored in the coulometer. The accumulated electric charge measured by use of the coulometer is assumed to be proportional to the cumulative dose of VUV radiation expressed in such convenient units as equivalent Sun hours (ESH) [defined as the number of hours of exposure to sunlight at normal incidence]. Intended originally for use aboard spacecraft, these instruments could also be adapted to such terrestrial uses as monitoring the curing of ultraviolet-curable epoxies. Each instrument includes a photodiode and a coulometer assembly mounted on an interface plate (see figure). The photodiode assembly includes an aluminum housing that holds the photodiode, a poly(tetrafluoroehylene) cosine receptor, and a narrow-band optical filter. The cosine receptor ensures that the angular response of the instrument approximates the ideal angular response (proportional to the cosine of the angle of incidence). The filter is chosen to pass the ultraviolet wavelength of interest in a specific experiment. The photodiode is electrically connected to the coulometer. The factor of proportionality between the charge stored in the coulometer and ultraviolet dosage (in units of ESH) is established, prior to use, in calibration experiments that involve the use of lamps and current sources traceable to the National Institute of Standards and Technology.

  15. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2{times}2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3{times}3{times}25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a {open_quotes}lossy{close_quotes} reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25{degrees}C with a photodiode amplifier peaking time of 2 {mu}s. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal.

  16. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    NASA Astrophysics Data System (ADS)

    Hyun, H. J.; Anderson, T.; Angelaszek, D.; Baek, S. J.; Copley, M.; Coutu, S.; Han, J. H.; Huh, H. G.; Hwang, Y. S.; Im, S.; Jeon, H. B.; Kah, D. H.; Kang, K. H.; Kim, H. J.; Kim, K. C.; Kwashnak, K.; Lee, J.; Lee, M. H.; Link, J. T.; Lutz, L.; Mitchell, J. W.; Nutter, S.; Ofoha, O.; Park, H.; Park, I. H.; Park, J. M.; Patterson, P.; Seo, E. S.; Wu, J.; Yoon, Y. S.

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  17. Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring.

    PubMed

    Muneeb, M; Ruocco, A; Malik, A; Pathak, S; Ryckeboer, E; Sanchez, D; Cerutti, L; Rodriguez, J B; Tournié, E; Bogaerts, W; Smit, M K; Roelkens, G

    2014-11-03

    This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the shortwave infrared wavelength range based on an optimized arrayed waveguide grating (AWG) filter with an integrated photodiode array. The AWG response is designed to obtain large nearest neighbor crosstalk (i.e. large overlap) between output channels, which allows accurately measuring the wavelength of a laser under test using the centroid detection technique. The passive AWG is fabricated on a 220 nm silicon-on-insulator (SOI) platform and is combined with GaInAsSb-based photodiodes. The photodiodes are heterogeneously integrated on the output grating couplers of the AWG using DVS-BCB adhesive bonding. The complete device with AWG and detectors has a footprint of only 2 mm(2) while the measured accuracy and resolution of the detected wavelength is better than 20pm.

  18. Vertical Isolation for Photodiodes in CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  19. Robust Quantum Random Number Generator Based on Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Xiang; Wang, Chao; Chen, Wei; Wang, Shuang; Lv, Fu-Sheng; He, De-Yong; Yin, Zhen-Qiang; Li, Hong-Wei; Guo, Guang-Can; Han, Zheng-Fu

    2015-08-01

    We propose and demonstrate a scheme to realize a high-efficiency truly quantum random number generator (RNG) at room temperature (RT). Using an effective extractor with simple time bin encoding method, the avalanche pulses of avalanche photodiode (APD) are converted into high-quality random numbers (RNs) that are robust to slow varying noise such as fluctuations of pulse intensity and temperature. A light source is compatible but not necessary in this scheme. Therefor the robustness of the system is effective enhanced. The random bits generation rate of this proof-of-principle system is 0.69 Mbps with double APDs and 0.34 Mbps with single APD. The results indicate that a high-speed RNG chip based on the scheme is potentially available with an integrable APD array.

  20. MRS photodiode in strong magnetic field

    SciTech Connect

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Francis, K.; Kubik, D.; Rykalin, V.; Tartaglia, M.A.; Zutshi, v.; /Northern Illinois U.

    2004-12-01

    The experimental results on the performance of the MRS (Metal/Resistor/Semiconductor) photodiode in the strong magnetic field of 4.4T, and the possible impact of the quench of the magnet at 4.5T on sensor's operation are reported.

  1. Solid state image sensing arrays

    NASA Technical Reports Server (NTRS)

    Sadasiv, G.

    1972-01-01

    The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.

  2. Recent advances in very large area avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Squillante, Michael R.; Christian, James; Entine, Gerald; Farrell, Richard; Karger, Arieh M.; McClish, Mickel; Myers, Richard; Shah, Kanai S.; Taylor, David; Vanderpuye, Kofi; Waer, Peter; Woodring, Mitchell

    2003-09-01

    The Avalanche Photodiode (APD) is a unique device that combines the advantages of solid state photodetectors with those of high gain devices such as photomultiplier tubes (PMTs). APDs have internal gain that provides a high signal-to-noise ratio. APDs have high quantum efficiency, are fast, compact, and rugged. These properties make them suitable detectors for important applications such as LADAR, detection and identification toxic chemicals and bio-warfare agents, LIDAR fluorescence detection, stand-off laser induced breakdown spectroscopy (LIBS), and nuclear detectors and imagers. Recently there have been significant technical breakthroughs in fabricating very large APDs, APD arrays, and position sensitive APD arrays (PSAPD). Signal gain of over 10,000 has been achieved, single element APDs have been fabricated with active area greater than 40 cm2, monolithic pixelated arrays with up to 28 x 28 elements have been fabricated, and position sensitive APDs have been developed and tested. Additionally, significant progress has been made in improving the fabrication process to provide better uniformity and high yield, permitting cost effective manufacturing of APDs for reduced cost.

  3. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.

    PubMed

    Beling, Andreas; Cross, Allen S; Piels, Molly; Peters, Jon; Zhou, Qiugui; Bowers, John E; Campbell, Joe C

    2013-11-04

    High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA · GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.

  4. Photodiode Camera Measurement of Surface Strains on Tendons during Multiple Cyclic Tests

    NASA Astrophysics Data System (ADS)

    Chun, Keyoung Jin; Hubbard, Robert Philip

    The objectives of this study are to introduce the use of a photodiode camera for measuring surface strain on soft tissue and to present some representative responses of the tendon. Tendon specimens were obtained from the hindlimbs of canines and frozen to -70°C. After thawing, specimens were mounted in the immersion bath at a room temperature (22°C), preloaded to 0.13N and then subjected to 3% of the initial length at a strain rate of 2%/sec. In tendons which were tested in two blocks of seven repeated extensions to 3% strain with a 120 seconds wait period between, the surface strains were measured with a photodiode camera and near the gripped ends generally were greater than the surface strains in the middle segment of the tendon specimens. The recovery for peak load after the rest period was consistent but the changes in patterns of surface strains after the rest period were not consistent. The advantages of a photodiode measurement of surface strains include the followings: 1) it is a noncontacting method which eliminates errors and distortions caused by clip gauges or mechanical/electronic transducers; 2) it is more accurate than previous noncontact methods, e.g. the VDA and the high speed photographic method; 3) it is a fully automatic, thus reducing labor for replaying video tapes or films and potential errors from human judgement which can occur during digitizing data from photographs. Because the photodiode camera, employs a solid state photodiode array to sense black and white images, scan targets (black image) on the surface of the tendon specimen and back lighting system (white image), and stored automatically image data for surface strains of the tendon specimen on the computer during cyclic extensions.

  5. Silicon photodiode as the two-color detector

    NASA Astrophysics Data System (ADS)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  6. Silicon photodiodes with high photoconductive gain at room temperature.

    PubMed

    Li, X; Carey, J E; Sickler, J W; Pralle, M U; Palsule, C; Vineis, C J

    2012-02-27

    Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

  7. Monte Carlo simulations of compact gamma cameras based on avalanche photodiodes.

    PubMed

    Després, Philippe; Funk, Tobias; Shah, Kanai S; Hasegawa, Bruce H

    2007-06-07

    Avalanche photodiodes (APDs), and in particular position-sensitive avalanche photodiodes (PSAPDs), are an attractive alternative to photomultiplier tubes (PMTs) for reading out scintillators for PET and SPECT. These solid-state devices offer high gain and quantum efficiency, and can potentially lead to more compact and robust imaging systems with improved spatial and energy resolution. In order to evaluate this performance improvement, we have conducted Monte Carlo simulations of gamma cameras based on avalanche photodiodes. Specifically, we investigated the relative merit of discrete and PSAPDs in a simple continuous crystal gamma camera. The simulated camera was composed of either a 4 x 4 array of four channels 8 x 8 mm2 PSAPDs or an 8 x 8 array of 4 x 4 mm2 discrete APDs. These configurations, requiring 64 channels readout each, were used to read the scintillation light from a 6 mm thick continuous CsI:Tl crystal covering the entire 3.6 x 3.6 cm2 photodiode array. The simulations, conducted with GEANT4, accounted for the optical properties of the materials, the noise characteristics of the photodiodes and the nonlinear charge division in PSAPDs. The performance of the simulated camera was evaluated in terms of spatial resolution, energy resolution and spatial uniformity at 99mTc (140 keV) and 125I ( approximately 30 keV) energies. Intrinsic spatial resolutions of 1.0 and 0.9 mm were obtained for the APD- and PSAPD-based cameras respectively for 99mTc, and corresponding values of 1.2 and 1.3 mm FWHM for 125I. The simulations yielded maximal energy resolutions of 7% and 23% for 99mTc and 125I, respectively. PSAPDs also provided better spatial uniformity than APDs in the simple system studied. These results suggest that APDs constitute an attractive technology especially suitable to build compact, small field of view gamma cameras dedicated, for example, to small animal or organ imaging.

  8. Cooled avalanche photodiode used for photon detection

    NASA Technical Reports Server (NTRS)

    Robinson, Deborah L.; Metscher, Brian D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5 to 3 times more sensitive than presently-available photomultiplier tubes (PPMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than 25 percent were obtained with detector noise levels comparable to the noise of a PMT; higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  9. Photon detection with cooled avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  10. Radon measurements with a PIN photodiode.

    PubMed

    Martín-Martín, A; Gutiérrez-Villanueva, J L; Muñoz, J M; García-Talavera, M; Adamiec, G; Iñiguez, M P

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218Po and 214Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations.

  11. A cooled avalanche photodiode with high photon detection probability

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1986-01-01

    An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensitivity of currently-available photomultiplier tubes. APD (avalanche photodiodes) detection probabilities that exceed 27% and approach 50% have been measured at an optimum operating temperature which minimizes noise. The sources of noise and their dependence on operating temperature and bias voltage are discussed.

  12. Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata

    2005-01-01

    A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

  13. A compact 64-pixel CsI(T1)/Si PIN photodiode imaging module with IC readout

    SciTech Connect

    Gruber, Gregory J.; Choong, Woon-Seng; Moses, William W.; Derenzo, Stephen E.; Holland, Stephen E.; Pedrali-Noy, Marzio; Krieger, Brad; Mandelli, Emanuele; Meddeler, Gerrit; Wang, Nadine W.

    2001-08-09

    We characterize the performance of a complete 64-pixel compact gamma camera imaging module consisting of optically isolated 3 mm 3 mm 5 mm CsI(Tl) crystals coupled to a custom array of low-noise Si PIN photodiodes read out by a custom IC. At 50 V bias the custom 64-pixel photodiode arrays demonstrate an average leakage current of 28 pA per 3 mm 3 mm pixel, a 98.5 percent yield of pixels with <100 pA leakage, and a quantum efficiency of about 80 percent for 540 nm CsI(Tl) scintillation photons. The custom 64-channel readout IC uses low-noise preamplifiers, shaper amplifiers, and a winner-take-all (WTA) multiplexer. The IC demonstrates maximum gain of 120 mV / 1000 e-, the ability to select the largest input signal in less than 150 ns, and low electronic noise at 8 ms peaking time ranging from 25 e- rms (unloaded) to an estimated 180 e- rms (photodiode load of 3 pF, 50 pA). At room temperature a complete 64-pixel detector module employing a custom photodiode array and readout IC demonstrates an average energy resolution of 23.4 percent fwhm and an intrinsic spatial resolution of 3.3 mm fwhm for the 140 keV emissions of 99mTc. Construction of an array of such imaging modules is straightforward, hence this technology shows strong potential for numerous compact gamma camera applications, including scintimammography.

  14. Internal quantum efficiency modeling of silicon photodiodes.

    PubMed

    Gentile, T R; Brown, S W; Lykke, K R; Shaw, P S; Woodward, J T

    2010-04-01

    Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01%. These results provide an important validation of the National Institute of Standards and Technology (NIST) spectral radiant power responsivity scale disseminated through the NIST Spectral Comparator Facility, as well as those scales disseminated by other National Metrology Institutes who have employed the same model.

  15. Avalanche speed in thin avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Ong, D. S.; Rees, G. J.; David, J. P. R.

    2003-04-01

    The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution function and that carriers always travel at their saturated drift velocities. We find that the avalanche duration calculated by the RPL model is almost twice of that predicted by the FBMC model, although the constant drift velocities used in the former model are estimated using the latter. The faster response predicted by FBMC model arises partly from the reduced dead space but mainly from the velocity overshoot of ionizing carriers. While the feedback multiplication processes forced by the effects of dead space extend the avalanche duration in short structures, the effects of velocity overshoot in the realistic model more than compensate, significantly improving multiplication bandwidth.

  16. Diamond photodiodes for x-ray application

    SciTech Connect

    Distel, James R; Smedley, John; Keister, Jeffrey W; Muller, Erik; Jordan - Sweet, Jean; Bohon, Jen; Dong, Bin

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  17. Characterization of avalanche photodiodes for lidar atmospheric return signal detectors

    NASA Technical Reports Server (NTRS)

    Antill, C. W., Jr.; Holloway, R. M.

    1988-01-01

    Results are presented from tests to characterize noise, dark current, overload, and gain versus bias, relationships of ten avalanche photodiodes. The advantages of avalanche photodiodes over photomultiplier tubes for given laser wavelengths and return signal amplitudes are outlined. The relationship between responsivity and temperature and dark current and temperature are examined. Also, measurements of the noise equivalent power, the excess noise factor, and linearity are given. The advantages of using avalanche photodiodes in the Lidar Atmospheric Sensing Experiment and the Lidar In-Space Technology Experiment are discussed.

  18. Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation

    NASA Astrophysics Data System (ADS)

    Scholze, Frank; Klein, Roman; Bock, Thomas

    2003-10-01

    Photodiodes are used as easy-to-operate detectors in the extreme-ultraviolet spectral range. At the Physikalisch-Technische Bundesanstalt photodiodes are calibrated with an uncertainty of spectral responsivity of 0.3% or less. Stable photodiodes are a prerequisite for the dissemination of these high-accuracy calibrations to customers. Silicon photodiodes with different top layers were exposed to intense extreme-ultraviolet irradiation. Diodes coated with diamondlike carbon or TiSiN proved to be stable within a few percent up to a radiant exposure of 100 kJ/cm2. The changes in responsivity could be explained as being due to carbon contamination and to changes in the internal charge collection efficiency. In ultrahigh vacuum, no indication of oxidation was found.

  19. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  20. Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

    NASA Technical Reports Server (NTRS)

    Vilnrotter, V.; Srinivasan, M.

    1998-01-01

    The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

  1. Radiation threshold levels for noise degradation of photodiodes. Technical report

    SciTech Connect

    Aukerman, L.W.; Vernon, F.L.; Song, Y.

    1986-09-30

    Space radiation can increase the noise of photodiodes as a result of either a sustained ionizing-dose-rate effect or displacement damage. Elementary, straightforward models are presented for calculating radiation threshold levels and rad hit susceptibility. Radiation-effects experiments that verify these models are discussed. Calculations for room-temperature silicon p-i-n photodetectors, an avalanche photodiode, and a hypothetical cooled staring detector indicate that this damage mechanism should not be ignored for space and nuclear environments.

  2. Photodiode-Based X-Ray Beam-Position Monitor With High Spatial-Resolution for the NSLS-II Beamlines

    SciTech Connect

    Yoon, P.S.; Siddons, D. P.

    2009-05-25

    We developed a photodiode-based monochromatic X-ray beam-position monitor (X-BPM) with high spatial resolution for the project beamlines of the NSLS-II. A ring array of 32 Si PIN-junction photodiodes were designed for use as a position sensor, and a low-noise HERMES4 ASIC chip was integrated into the electronic readout system. A series of precision measurements to characterize electrically the Si-photodiode sensor and the ASIC chip demonstrated that the inherent noise is sufficiently below tolerance levels. Following up modeling of detector's performance, including geometrical optimization using a Gaussian beam, we fabricated and assembled a first prototype. In this paper, we describe the development of this new state-of-the-art X-ray BPM along the beamline, in particular, downstream from the monochromator.

  3. Transparent organic photodiodes stacked with electroluminescence devices

    NASA Astrophysics Data System (ADS)

    Komatsu, Takahiro; Sakanoue, Kei; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2005-10-01

    Stacked devices that consisted of transparent organic photodiodes (TOPDs) and organic electroluminescence devices (OELs) were demonstrated. TOPDs were prepared by poly-(2-methoxy-5- (2'-ethylhexyloxy)-1,4-phenylene vinylene (MEH-PPV) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend films as an active layer and transparent Au cathode (10 nm thick). These TOPDs showed about 45 % transmittance on average in visible light region (380-780 nm) and good correlation between incident light intensity and output photocurrent. Based on these results, the stacked devices were prepared by introducing OELs on TOPDs through a SiO insulating layer. The structure of OELs was ITO/Carbon/TPD/Alq3/LiF/Al. These stacked devices work as light emitting devices and also photo diodes. Since TOPDs have transparency, OELs can illuminate a paper put on the glass substrate through TOPDs and TOPDs can receive reflective light from the paper. Although the TOPDs also absorb light from OELs directly, the output signals from TOPDs changed according to the black and white pattern of the paper. These results show that the devices act as an image sensor having light emitting layer and light receiving layer in a same area.

  4. I-V and noise performance in MWIR to VLWIR large area Hg1-xCdxTe photodiodes

    NASA Astrophysics Data System (ADS)

    D'Souza, A. I.; Stapelbroek, M. G.; Dolan, P. N.; Wijewarnasuriya, P. S.; Boehmer, E.; Smith, D. S.; Ehlert, J. C.; Andrews, J. E.

    2005-05-01

    The National Polar-orbiting Operational Environmental Satellite System (NPOESS), is overseen by the Integrated Program Office (IPO), a joint effort of the Department of Defense, Department of Commerce and NASA. One of the instruments on the NPOESS satellite is the Cross-track Infrared Sounder (CrIS) instrument. CrIS is a Fourier Transform interferometric infrared (FTIR) sensor used to measure earth radiance at high spectral resolution to derive pressure, temperature, and moisture profiles of the atmosphere from the ground on up. Each CrIS instrument contains three different cutoff wavelength (λc)focal plane modules (FPMs): an SWIR FPM [λc(98 K) ~ 5 mm], MWIR FPM [λc(98 K) ~ 9 mm] and a LWIR FPM [λc(81 K) ~ 15.5 mm]. There are nine large (850 mm diameter) photodiodes per FPM, the nine detectors being arranged in a 3 x 3 array. The nine detectors are placed under tight tolerances in the X, Y, and Z dimensions. The steps involved in the transfer of photodiodes as part of a newly fabricated wafer to the mounting of the photodiodes on the FPM involves many processing steps including a significant amount of dicing, cleaning, wire bonding and baking at elevated temperatures. Quantum efficiency and 1/f noise in Hg1-xCdxTe photodiodes are critical parameters that limit the sensitivity of infrared sounders. The ratio α, defined as the noise current in unit bandwidth in(f = 1 Hz, Vd, Δf = 1 Hz) to the dark current Id(Vd), that is, α = in/Id is one of the parameters used to select photodiodes for placement in FPMs. α is equivalent to √αH/N that appears in the well-known Hooge expression. For the sixty-one, λc ~ 9 μm photodiodes measured at 60 mV reverse bias and at 98 K, the average value of αdark = 1.3 x 10-4 in the dark and αPHOTO = in/IPHOTO is ~ 2 x 10-6 under illuminated conditions. These values of α are a factor of two lower than that reported previously. The λc ~ 15.5 μm photodiodes have average αdark = 1.3 x 10-5 with the highest performance

  5. Application of a backside-illuminated charge-coupled-device camera for single-pulse coherent anti-Stokes Raman spectroscopy N(2) thermometry.

    PubMed

    Plath, I; Meier, W; Stricker, W

    1992-01-01

    The application of an unintensified backside-illuminated CCD for the acquisition of broadband single-pulse coherent anti-Stokes Raman spectroscopy (CARS) spectra is demonstrated. This CCD shows a quantum efficiency 5 times higher than a front-illuminated CCD and offers significant advantages compared with intensified linear photodiode array detectors generally used for single-pulse CARS thermometry. It overcomes the main drawbacks of the intensified linear photodiode array detector in single-pulse CARS N(2) spectroscopy: nonlinearity, limited dynamic range, and image persistence. A method for extending the dynamic range is demonstrated in a highly turbulent flame.

  6. Organic light detectors: photodiodes and phototransistors.

    PubMed

    Baeg, Kang-Jun; Binda, Maddalena; Natali, Dario; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

  7. X-ray and charged particle detection with CsI(Tl) layer coupled to a-Si:H photodiode layers

    SciTech Connect

    Fujieda, I.; Cho, G.; Drewery, J.; Gee, T.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Wildermuth, D. ); Street, R.A. )

    1990-10-01

    A compact real-time X-ray and charged particle imager with digitized position output can built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100--1000{mu}m thick were evaporated on glass substrates from a crystal CsI(Tl). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(Tl). Single {beta} particle detection was demonstrated with this combination. The light spread inside evaporated CsI(Tl) was suppressed by its columnar structure. Scintillation detection gives much larger signals than direct X-ray detection due to the increased energy deposition in the detector material. Fabrication of monolithic type X-ray sensors consisting of CsI + a-Si:H photodiodes is discussed. 20 refs., 16 figs.

  8. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    SciTech Connect

    Gruber, Gregory J.

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  9. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging

    PubMed Central

    Resetar, Tomislav; De Munck, Koen; Haspeslagh, Luc; Rosmeulen, Maarten; Süss, Andreas; Puers, Robert; Van Hoof, Chris

    2016-01-01

    This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under −32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e- rms, full well capacity of 8000e-, and the conversion gain of 75 µV/e- are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination. PMID:27537882

  10. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  11. A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure

    NASA Astrophysics Data System (ADS)

    Cao, Chen; Zhang, Bing; Wu, Long-Sheng; Li, Na; Wang, Jun-Feng

    2014-12-01

    A quantum efficiency analytical model for complementary metal—oxide—semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160 × 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

  12. Comparative performance of HgCdTe photodiodes for heterodyne application

    NASA Technical Reports Server (NTRS)

    Kowitz, H. R.

    1980-01-01

    The use of photodiodes as optical photomixers in laser heterodyne spectroscopy systems is discussed. The quantum efficiency of the photodiodes is reported with the emphasis on its effect on the system's signal to noise ratio. The measurement techniques used to determine photodiode dc and heterodyne quantum efficiencies are described. The theory behind the measurements as well as actual measurements data for two HgCdTe photodiodes are presented.

  13. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    PubMed

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis.

  14. Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Chen, Cao; Bing, Zhang; Junfeng, Wang; Longsheng, Wu

    2016-05-01

    The charge transfer potential barrier (CTPB) formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode (PPD) CMOS image sensors (CIS), and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was performed in detail on the principle of the proposed method. Application of the measurements on a prototype PPD-CIS chip with an array of 160 × 160 pixels is demonstrated. Such a method intends to shine new light on the guidance for the lag-free and high-speed sensors optimization based on PPD devices. Project supported by the National Defense Pre-Research Foundation of China (No. 51311050301095).

  15. An avalanche photodiode photon counting camera for high-resolution astronomy

    NASA Astrophysics Data System (ADS)

    Ryan, Oliver; Redfern, Mike; Shearer, Andrew

    2006-02-01

    A system is described which makes best use of the high quantum efficiency and high count rate capability of avalanche photodiodes for high time resolution observations of optical pulsars. The use of three APDs allows simultaneous photometry of the target and a reference star, and the monitoring of the sky background. By minimising the optical components in the light path the optical efficiency of the system is maximised. The TRIFFID (Shearer, A., Stappers, B., O'Connor, P., Golden, A., Strom, R., Redfern, M., Ryan, O.: Science 301, 493 495 (2003)) and OPTIMA (Straubmeier, C., Kanbach, G., Schrey, F.: Exp. Astron. 11, 157 170 (2001)) have shown that fibre-fed APD arrays can produce excellent results. This, new, system was used on the 6m BTA in November 2003 results on the Crab pulsar are presented.

  16. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    NASA Technical Reports Server (NTRS)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  17. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    PubMed

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  18. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    SciTech Connect

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  19. Reading a CD-ROM without a photodiode

    NASA Astrophysics Data System (ADS)

    Wishon, Michael J.; Mourozeau, G.; Ng, K.; Sahai, A. A.; Locquet, Alexandre; Citrin, D. S.

    2016-04-01

    We use a laser diode from a commercial CD/DVD-ROM drive to detect changes in the surface of a diffraction grating without a photodiode. Specifically, we exploit the changing terminal voltage in the laser-diode due to changing feedback strength as the laser is rastered across the grating's surface.

  20. BiCMOS-integrated photodiode exploiting drift enhancement

    NASA Astrophysics Data System (ADS)

    Swoboda, Robert; Schneider-Hornstein, Kerstin; Wille, Holger; Langguth, Gernot; Zimmermann, Horst

    2014-08-01

    A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.5-μm BiCMOS process. The reverse bias of the photodiode can be increased far above the circuit supply voltage, enabling a high-drift velocity. Therefore, a highly efficient and very fast photodiode is achieved. Rise/fall times down to 94 ps/141 ps at a bias of 17 V were measured for a wavelength of 660 nm. The bandwidth was increased from 1.1 GHz at 3 V to 2.9 GHz at 17 V due to the drift enhancement. A quantum efficiency of 85% with a 660-nm light was verified. The technological measures to avoid negative effects on an NPN transistor due to the Kirk effect caused by the low-doped I-layer epitaxy are described. With a high-energy collector implant, the NPN transit frequency is held above 20 GHz. CMOS devices are unaffected. This photodiode is suitable for a wide variety of high-sensitivity optical sensor applications, for optical communications, for fiber-in-the-home applications, and for optical interconnects.

  1. Increasing the dynamic range of CMOS photodiode imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce R. (Inventor)

    2007-01-01

    A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.

  2. Traveling wave model of uni-traveling carrier photodiode

    NASA Astrophysics Data System (ADS)

    Khanra, Senjuti; Das Barman, Abhirup

    2015-06-01

    A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.

  3. Some studies of avalanche photodiode readout of fast scintillators

    SciTech Connect

    Holl, I.; Lorenz, E.; Natkaniez, S.; Renker, D.; Schmelz, C. |; Schwartz, B.

    1995-08-01

    Photomultipliers (PMs) are the classical readout element for scintillation detectors in high energy particle physics, nuclear physics, medical physics, industrial radiation monitors etc. Here, large area avalanche photodiodes with high performance, narrow operation tolerances and high reliability have recently become available. The authors report on some tests of their performance in the readout of fast scintillators.

  4. Photonic nanojet-enhanced nanometer-scale germanium photodiode.

    PubMed

    Hasan, Mehdi; Simpson, Jamesina J

    2013-08-01

    A design challenge for photodiodes yielding both high speed and responsivity is the necessity to concentrate incident light into a subwavelength active volume region. Photonic nanojets have been reported in the literature as a means to focus an incident plane wave to a subwavelength-waist propagating beam with applications ranging from next-generation DVDs to characterizing subwavelength features within dielectric targets. In the present work, a new application of photonic nanojets is proposed, focusing electromagnetic energy into a photodiode. Three-dimensional finite-difference time-domain solutions are conducted to determine the advantages of photonic nanojet-enhanced photodiodes at near-infrared wavelengths (1310 nm). We find that photonic nanojets provide a factor of 26 increase in the volume-integrated electric field within the subwavelength active volume of the photodiode of size 0.0045 μm³. Furthermore, this increase is achieved independent of the incident polarization and over a broad bandwidth. Photonic nanojets may thus serve as an attractive alternative to plasmonics for some applications.

  5. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    NASA Astrophysics Data System (ADS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-12-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  6. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  7. Antimonide-based Geiger-mode avalanche photodiodes for SWIR and MWIR photon counting

    NASA Astrophysics Data System (ADS)

    Duerr, Erik K.; Manfra, Michael J.; Diagne, Mohamed A.; Bailey, Robert J.; Zayhowski, John J.; Donnelly, Joseph P.; Connors, Michael K.; Grzesik, Michael J.; Turner, George W.

    2010-04-01

    At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm APDs use a separate-absorber-multiplier design with an InGaAsSb absorber and electron-initiated avalanching in the multiplier. These APDs have exhibited normalized avalanche probability (product of avalanche probability and photo-carrier-injection probability) of 0.4 and dark count rates of ~150 kHz at 77 K for a 30-μm-diameter device. A 1000- element imaging array of the 2-μm detectors has been demonstrated, which operate in a 5 kg dewar with an integrated Stirling-cycle cooler. The APD array is interfaced with a CMOS readout circuit, which provides photon time-of-arrival information for each pixel, allowing the focal plane array to be used in a photon-counting laser radar system. The 3.4-μm APDs use an InAsSb absorber and hole-initiated avalanching and have shown dark count rates of ~500 kHz at 77 K but normalized avalanche probability of < 1%. Research is ongoing to determine the cause of the low avalanche probability and improve the device performance.

  8. Planar InAs photodiodes fabricated using He ion implantation.

    PubMed

    Sandall, Ian; Tan, Chee Hing; Smith, Andrew; Gwilliam, Russell

    2012-04-09

    We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an 'as-implanted' sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.

  9. Avalanche Photodiode Statistics in Triggered-avalanche Detection Mode

    NASA Technical Reports Server (NTRS)

    Tan, H. H.

    1984-01-01

    The output of a triggered avalanche mode avalanche photodiode is modeled as Poisson distributed primary avalanche events plus conditionally Poisson distributed trapped carrier induced secondary events. The moment generating function as well as the mean and variance of the diode output statistics are derived. The dispersion of the output statistics is shown to always exceed that of the Poisson distribution. Several examples are considered in detail.

  10. Receiver characteristics of laser altimeters with avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.; Boutsikaris, Leo; Abshire, James B.

    1992-01-01

    The receiver characteristics of a laser altimeter system containing an avalanche photodiode photodetector are analyzed using the Gaussian approximation, the saddle-point approximation, and a nearly exact analysis. The last two methods are shown to yield very similar results except when the background noise is extremely low and the probability of false alarm is high. However, the Gaussian approximation method is shown to cause significant errors even under relatively high levels of background noise and received signal energy.

  11. Geiger-mode avalanche photodiodes, history, properties and problems

    NASA Astrophysics Data System (ADS)

    Renker, D.

    2006-11-01

    Geiger-mode avalanche photodiodes (G-APDs) have been developed during recent years and promise to be an alternative to photomultiplier tubes. They have many advantages like single photon response, high detection efficiency, high gain at low bias voltage and very good timing properties but some of their properties, the dark count rate for example, can be a problem. Several types of G-APDs are on the market and should be selected carefully for a given application.

  12. Automated Sky-Compensating Photometer with a Silicon Photodiode

    NASA Astrophysics Data System (ADS)

    Riggs, J. D.; Alexander, D. R.

    1983-12-01

    This article describes the automated, sky-compensating filter photometer, currently being built and tested for the Lake Afton Public Observatory (LAPO) at Wichita State University, for use on the 16-inch Ritchey-Chretien telescope. Design emphasis is directed toward minimal user intervention due to varying user backgrounds. The instrumentation consists of a sky-compensating photometer, a Hamamatsu S1133-01 silicon photodiode detector, a programmable DC amplifier, and a computer dedicated to data collection and photometer control.

  13. Investigation of avalanche photodiodes radiation hardness for baryonic matter studies

    NASA Astrophysics Data System (ADS)

    Kushpil, V.; Mikhaylov, V.; Ladygin, V. P.; Kugler, A.; Kushpil, S.; Svoboda, O.; Tlustý, P.

    2016-01-01

    Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy ion collisions experiments. The results of the investigations of the APDs properties from Zecotek, Ketek and Hamamatsu manufacturers after irradiation using secondary neutrons from cyclotron facility U120M at NPI of ASCR in Řež are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR.

  14. III-Nitride Visible- and Solar-Blind Avalanche Photodiodes

    DTIC Science & Technology

    2007-12-01

    Manager: Dr. Donald Silversmith – Air Force Office of Scientific Research Principal Investigator: Professor Manijeh Razeghi Center for...photodiodes K. Minder, J.L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi and D. Silversmith Applied Physics Letters, Vol. 91, No. 7, p. 073513-1...M. Razeghi, E. Muñoz, and D. Silversmith Applied Physics Letters, Vol. 91, No. 04, p. 041104 -1-- July 23, 2007 3. Hole-initiated multiplication

  15. Synthetic Array Heterodyne Detection: Developments within the Caliope CO{sub 2} DIAL Program

    SciTech Connect

    Rehse, S.J.; Strauss, E.M.

    1995-09-01

    A new technique, Synthetic Array Heterodyne Detection, offers a wider field of view and improved signal to noise for coherent DIAL systems by reducing speckle interference. We have implemented a synthetic multi-pixel array using a CO{sub 2} laser on a single element HgCdTe photodiode.

  16. Vertically illuminated TW-UTC photodiodes for terahertz generation

    NASA Astrophysics Data System (ADS)

    Barrientos Z., Claudio M.; Calle G., Victor H.; Alvarez, Jaime A.; Mena, F. Patricio; Vukusic, Josip; Stake, Jan; Michael, Ernest A.

    2012-09-01

    More efficient and powerful continuous-wave photonic mixers as terahertz sources are motivated by the need of more versatile local oscillators for submillimeter/terahertz receiver systems. Uni-Travelling Carrier (UTC) photodiodes are very prospective candidates for reaching this objective, but so far only have been reported as lumped-elements or as edge-illuminated optical-waveguide travelling-wave (TW) devices. To overcome the associated power limitations of those implementations, we are developing a novel implementation of the UTC photodiodes which combines a travelingwave photomixer with vertical velocity-matched illumination in a distributed structure. In this implementation called velocity-matched travelling-wave uni-travelling carrier photodiode, it is possible to obtain in-situ velocity matching of the beat-fringes of the two angled laser beams with the submm/THz-wave on the stripline. In this way, minimum frequency roll-off is achieved by tuning the angle between the two laser beams. A first design of these TW-UTC PDs from our Terahertz Photonics Laboratory at University of Chile has been micro-fabricated at the MC2 cleanroom facility at Chalmers Technical University.

  17. Amplifiers dedicated for large area SiC photodiodes

    NASA Astrophysics Data System (ADS)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  18. Future sensor system needs for staring arrays

    NASA Astrophysics Data System (ADS)

    Miller, John Lester

    2011-05-01

    This is a systems application paper regarding how sensor systems may use future technology FPAs. A historical perspective is discussed along with lessons learned from previous technologies. Future system requirements for strained super-lattice (SLS), quantum dots (QDOT) and traditional quantum well infrared photo-diodes (QWIP) arrays will be presented from both a commercial and military perspective. New potential markets will open up in the future if certain FPA technologies can reduce cost and provide higher sensitivities at higher operating temperatures.

  19. Optical phased-array ladar.

    PubMed

    Montoya, Juan; Sanchez-Rubio, Antonio; Hatch, Robert; Payson, Harold

    2014-11-01

    We demonstrate a ladar with 0.5 m class range resolution obtained by integrating a continuous-wave optical phased-array transmitter with a Geiger-mode avalanche photodiode receiver array. In contrast with conventional ladar systems, an array of continuous-wave sources is used to effectively pulse illuminate a target by electro-optically steering far-field fringes. From the reference frame of a point in the far field, a steered fringe appears as a pulse. Range information is thus obtained by measuring the arrival time of a pulse return from a target to a receiver pixel. This ladar system offers a number of benefits, including broad spectral coverage, high efficiency, small size, power scalability, and versatility.

  20. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    SciTech Connect

    Solodar, A. Arun Kumar, T.; Sarusi, G.; Abdulhalim, I.

    2016-01-11

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  1. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    NASA Astrophysics Data System (ADS)

    Solodar, A.; Arun Kumar, T.; Sarusi, G.; Abdulhalim, I.

    2016-01-01

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  2. Study of EUV and x-ray radiation hardness of silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Zabrodsky, Vladimir V.; Aruev, Pavel; Filimonov, Vladimir V.; Sobolev, Nikolay A.; Sherstnev, Evgeniy V.; Belik, Viktor P.; Nikolenko, Anton D.; Ivlyushkin, Denis V.; Pindyurin, Valery F.; Shadrin, Nikita S.; Soldatov, Artem E.; Mashkovtsev, Mikhail R.

    2013-05-01

    This work presents the results of long-term observation of the silicon photodiodes spatial profile response and the silicon photodiodes dark current after their exposure to 10.2 eV quanta and in the spectral range of 150-300 eV. Exposure of the photodiodes to quanta of an energy of 10.2 eV was repeated. Several other photodiodes have been irradiated in the spectral range of 700-1800 eV with a dose of 8 J/cm2. The spatial profile of the irradiated photodiodes was studied with 3.49 eV, 10.2 eV and 100 eV quanta. The effect of the recovery of the response spatial profile has been proved for the p+-n diode. An additional useful method of visualization of irradiated photodiode area is also presented.

  3. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    SciTech Connect

    Suzuki, Shingo; Namekata, Naoto Inoue, Shuichiro; Tsujino, Kenji

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  4. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

    DOEpatents

    Skogen, Erik J.

    2016-10-25

    The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

  5. Development and validation of highly selective screening and confirmatory methods for the qualitative forensic analysis of organic explosive compounds with high performance liquid chromatography coupled with (photodiode array and) LTQ ion trap/Orbitrap mass spectrometric detections (HPLC-(PDA)-LTQOrbitrap).

    PubMed

    Xu, Xiaoma; Koeberg, Mattijs; Kuijpers, Chris-Jan; Kok, Eric

    2014-01-01

    An LTQ-Orbitrap FTMS is a new (hybrid) mass spectrometric (MS) analyzer. It allows for the acquisition of full scan MS(n) (n-stage fragmentations, n=1-n) spectra with the linear ion trap detector (LTQ) at high speed and/or with the Fourier Transform-detector (Orbitrap) with ultra high mass resolution (>60,000 at m/z<400amu) and high mass accuracy (≤1ppm with internal calibration). In addition it may be coupled with liquid chromatography (LC) with photo diode array (PDA) detection. Two methods for the forensic screening and confirmation of all common trace explosives in post-blast residues have been developed on this instrument using atmospheric pressure chemical ionization (APCI). In one run, the nitrogen-containing explosives are analyzed with the combination of "LC-(PDA)-APCI(-)-LTQ MS(2)/Orbitrap FTMS" (Method 1). In another run, peroxide explosives are analyzed with "LC-APCI(+)-LTQ MS(2)/Orbitrap FTMS" (Method 2). The performance of both methods has been validated according to procedures defined in the EU COMMISSION DECISION implementing Council Directive 96/23/EC concerning the performance of analytical methods and the interpretation of results (DC 2002/657/EC) and other standards (NEN 17025 and NEN 7777). The methods are highly selective due to the simultaneous utilization of the Orbitrap FTMS and LTQ MS(2), both of which are highly selective detectors Tested explosive compounds can be detected in the molecular ion form by the Orbitrap analyzer with minimal mass interference in different matrices when using an extremely narrow mass tolerance detection window (≤2ppm). The identification of a detected compound follows an identification point system. Experimental results show that almost all explosive compounds meet the confirmation criteria (minimum 4 points) required for the positive identification by the DC 2002/657/EC.

  6. Vertically illuminated TW-UTC photodiodes for terahertz generation

    NASA Astrophysics Data System (ADS)

    Barrientos Z., Claudio; Calle, Victor; Diaz, Marcos; Mena, F. Patricio; Vukusic, Josip; Stake, Jan; Michael, Ernest A.

    2010-07-01

    More efficient continuous-wave photonic nearinfrared mixers as terahertz sources are investigated with the motivation to develop a universal photonic local oscillator for astronomical submillimeter/terahertz receiver systems. For this, we develop new concepts for vertically illuminated traveling-wave (TW) photomixers, TW Uni-Travelling Carrier (UTC) photodiodes. Device simulation/modeling and optical/terahertz testing is being done in the new terahertz photonics laboratory at the Electrical Engineering Department of the University of Chile, whereas device fabrication is performed at the MC2 cleanroom facility at Chalmers Technical University. We report on first progress in this direction.

  7. Vertically Illuminated TW-UTC Photodiodes for Terahertz Generation

    NASA Astrophysics Data System (ADS)

    Barrientos, C.; Calle, V.; Diaz, M.; Mena, F. P.; Vukusic, J.; Stake, J.; Michael, E. A.

    2010-03-01

    More efficient continuous-wave photonic near-infrared mixers as terahertz sources are investigated with the motivation to develop a universal photonic local oscillator for astronomical submillimeter/terahertz receiver systems. For this, our group has developed new concepts for vertically illuminated traveling-wave (TW) photomixers. The new device called TW-Uni-Travelling Carrier photodiodes (TW-UTC PD) was simulated, modeled and shall be optical/terahertz tested at the Electrical Engineering Department of the University of Chile, whereas device fabrication is performed at the MC2 cleanroom facility at Chalmers University of technology. We are reporting on first progresses in this direction.

  8. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  9. Photon counting modules using RCA silicon avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  10. Effect of temperature on silicon PIN photodiode radiation detectors

    NASA Astrophysics Data System (ADS)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Ha, Jang Ho; Cho, Seong Yeon

    2014-03-01

    One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 °C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

  11. Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

    DTIC Science & Technology

    2016-01-05

    superlattice p-i-n photodiodes as a function of growth temperature and Beryllium (Be) compensated doping. The unintentionally doped InAs/InAs0.45Sb0.55...background carrier concentration can be reduced by optimizing growth temperature and by Be-compensation doping. Different kinds of defects exist in the...undoped InAs/InAs1-xSbx type-II superlattice and their dependence on the growth temperature was also investigated. Number of Papers published in peer

  12. A 1.06 micrometer avalanche photodiode receiver

    NASA Technical Reports Server (NTRS)

    Eden, R. C.

    1975-01-01

    The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

  13. Application of photodiodes to the detection of electromagnetic bursts

    NASA Technical Reports Server (NTRS)

    Fukushima, Y.; Saito, T.; Sakata, M.; Shima, M.; Yamamoto, Y.

    1985-01-01

    A new type of photodiode + scintillator (1 m2 x 1 cm) detector is developed to detect the large electro-magnetic burst under an EX-chamber. The threshold burst size is found to be 4.3 x 10 the 5 particles at the center of the scintillator. Therefore a gamma-ray family of 10 TeV is detectable by it, when it is set under 14 r.1. of iron. In addition, a very fast (2.4 nsec width) and very bright (correspond to 10 to the 6 particles) scintillation pulse has become avarable for this study.

  14. Thermal calibration of photodiode sensitivity for atomic force microscopy

    SciTech Connect

    Attard, Phil; Pettersson, Torbjoern; Rutland, Mark W.

    2006-11-15

    The photodiode sensitivity in the atomic force microscope is calibrated by relating the voltage noise to the thermal fluctuations of the cantilever angle. The method accounts for the ratio of the thermal fluctuations measured in the fundamental vibration mode to the total, and also for the tilt and extended tip of the cantilever. The method is noncontact and is suitable for soft or deformable surfaces where the constant compliance method cannot be used. For hard surfaces, the method can also be used to calibrate the cantilever spring constant.

  15. Radiation Threshold Levels for Noise Degradation of Photodiodes.

    DTIC Science & Technology

    1986-09-30

    for Noise Degradation of Photodiodes L. W. AUKERMAN , F. L. VERNON, Jr., and Y. SONG Electronics Research Laboratory Laboratory Operations The...PERFORMING ORG. REPORT NUMBER TR-0086 (6925-04)-2 7. AUTHOR(e) S. CONTRACT OR GRANT NUMBER(a) Lee W. Aukerman , Frank L. Vernon, Jr., and Yeong Song...Agency, Washington, D.C. (December 1971). 8. D. H. Seib and L. W. Aukerman , "Photodetectors for the 0.1 to 1.0 4m Spectral Region," Advances in

  16. Initial results from the Sherbrooke avalanche photodiode positron tomograph

    SciTech Connect

    Lecomte, R.; Cadorette, J.; Rodrigue, S.; Lapointe, D.; Rouleau, D.; Bentourkia, M.; Yao, R.; Msaki, P.

    1996-06-01

    The design features and engineering constraints of a PET system based on avalanche photodiode (APD) detectors have been described in a previous report. In this paper, the authors present the initial results obtained with the Sherbrooke APD-PET scanner, a very high spatial resolution device designed for dynamic imaging of small and medium-sized laboratory animals such as rats, cats, rabbits and small monkeys. Its physical performance has been evaluated in terms of resolution, sensitivity, count rate, random and scatter fractions, contrast and relative activity recovery as a function of object size. The capabilities of the scanner for biomedical research applications have been demonstrated using phantom and animal studies.

  17. A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics

    SciTech Connect

    Gopal, Vishnu

    2014-08-28

    This paper presents a new approach to investigate leakage current mechanisms in infrared photodiodes from the illuminated current–voltage characteristics. The example of mid-wave mercury cadmium telluride photodiodes is presented to illustrate the new approach. The new method is suitable for evaluating diodes in an array environment as advance knowledge of any of the material or device parameters are not required. The thermal saturation current is estimated from the observed open circuit voltage and zero-bias current (photo-current) of the diode. The ohmic shunt resistance is estimated from the observed maximum dynamic impedance of the diode. The experimentally observed reverse bias diode current in excess of thermal current, photo-current, and ohmic shunt current is reported to be best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. Our investigations reveal a close link between the excess current and the sources of ohmic currents in the diode. Exponential growth of excess current with the applied bias voltage has been interpreted as an indication of soft breakdown of the diodes.

  18. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  19. Fault tolerant photodiode and photogate active pixel sensors

    NASA Astrophysics Data System (ADS)

    Jung, Cory; Chapman, Glenn H.; La Haye, Michelle L.; Djaja, Sunjaya; Cheung, Desmond Y. H.; Lin, Henry; Loo, Edward; Audet, Yves R.

    2005-03-01

    As the pixel counts of digital imagers increase, the challenge of maintaining high yields and ensuring reliability over an imager"s lifetime increases. A fault tolerant active pixel sensor (APS) has been designed to meet this need by splitting an APS in half and operating both halves in parallel. The fault tolerant APS will perform normally in the no defect case and will produce approximately half the output for single defects. Thus, the entire signal can be recovered by multiplying the output by two. Since pixels containing multiple defects are rare, this design can correct for most defects allowing for higher production yields. Fault tolerant photodiode and photogate APS" were fabricated in 0.18-micron technology. Testing showed that the photodiode APS could correct for optically induced and electrically induced faults, within experimental error. The photogate APS was only tested for optically induced defects and also corrects for defects within experimental error. Further testing showed that the sensitivity of fault tolerant pixels was approximately 2-3 times more sensitive than the normal pixels. HSpice simulations of the fault tolerant APS circuit did not show increased sensitivity, however an equivalent normal APS circuit with twice width readout and row transistors was 1.90 times more sensitive than a normal pixel.

  20. Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Yang, Guang; Ortiz, Monico; Wrigley, Christopher; Hancock, Bruce; Cunningham, Thomas

    2000-01-01

    Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

  1. Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

    SciTech Connect

    Mukhopadhyay, Sourav; Chandratre, V. B.; Sukhwani, Menka; Pithawa, C. K.

    2011-10-20

    Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensors are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.

  2. Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

    PubMed Central

    2016-01-01

    A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications. PMID:27615556

  3. Fast single photon avalanche photodiode-based time-resolved diffuse optical tomography scanner

    PubMed Central

    Mu, Ying; Niedre, Mark

    2015-01-01

    Resolution in diffuse optical tomography (DOT) is a persistent problem and is primarily limited by high degree of light scatter in biological tissue. We showed previously that the reduction in photon scatter between a source and detector pair at early time points following a laser pulse in time-resolved DOT is highly dependent on the temporal response of the instrument. To this end, we developed a new single-photon avalanche photodiode (SPAD) based time-resolved DOT scanner. This instrument uses an array of fast SPADs, a femto-second Titanium Sapphire laser and single photon counting electronics. In combination, the overall instrument temporal impulse response function width was 59 ps. In this paper, we report the design of this instrument and validate its operation in symmetrical and irregularly shaped optical phantoms of approximately small animal size. We were able to accurately reconstruct the size and position of up to 4 absorbing inclusions, with increasing image quality at earlier time windows. We attribute these results primarily to the rapid response time of our instrument. These data illustrate the potential utility of fast SPAD detectors in time-resolved DOT. PMID:26417526

  4. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  5. Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.

    PubMed

    Zhang, Hezhi; Dai, Xing; Guan, Nan; Messanvi, Agnes; Neplokh, Vladimir; Piazza, Valerio; Vallo, Martin; Bougerol, Catherine; Julien, François H; Babichev, Andrey; Cavassilas, Nicolas; Bescond, Marc; Michelini, Fabienne; Foldyna, Martin; Gautier, Eric; Durand, Christophe; Eymery, Joël; Tchernycheva, Maria

    2016-10-05

    A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm(2) detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.

  6. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.; Bayram, C.

    2009-05-01

    Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

  7. Absolute light and resolution measurements for sensitive CsI(Tl)/photodiode detectors

    NASA Astrophysics Data System (ADS)

    Meier, Michael M.

    2003-01-01

    To conserve volume and power, photodiode/scintillator combinations are strong candidates for gamma-ray detection in space applications. High sensitivity to MeV gamma rays necessitates large-volume scintillators, which are most effectively read out with large-area photodiodes. However, because photodiodes have unity gain, the electronic noise limits resolution, and therefore small-area photodiodes that minimize capacitance are preferred. Thus, optimization of resolution involves maximizing light production and transport in the scintillator and light collection in the photodiode, while minimizing photodiode area. Measurements of performance are reported for 1×1×1cm3/10×10mm2, 80cm3/18×18mm2, and 85cm3/10×10mm2 CsI(Tl)/photodiode combinations. Each large scintillator was a single crystal, machined to a geometry that comprised a 40mm diameter × 50mm height cylindrical section that was extended through a 20°conical section to a square face that matched the respective photodiode sensitive surface. Absolute scales were estimated for the light output by measuring the photodiode responses to 241Am (59.54keV), 57Co (122.06 and 136.47keV), and 133Ba (80.99keV) and assuming a value of 3.67eV/electron-hole pair. The photodiode quantum efficiencies for the CsI(Tl) emission spectrum, corrected for Si reflection back into the scintillator, was taken to be 0.835. We obtained values of 58.2, 46.7, and 34.6 photons/keV for the combined light production and transport into the CsI for the 1cm3, ~80cm3, and ~85cm3 detectors, respectively. The best measured resolutions at 662keVfor the detectors were 5.9%, 7.2%, and 7.4% FWHM, respectively.

  8. Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

    NASA Technical Reports Server (NTRS)

    Vasile, Stefan; Shera, Suzanne; Shamo, Denis

    1998-01-01

    New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive

  9. Responsivity of Diamond X-ray Photodiodes Calibrated at NSLS

    SciTech Connect

    Keister,J.W.; Smedley, J.; Muller, E. M.; Bohon, J.

    2009-09-27

    Single crystal, high purity synthetic diamond is used as photoabsorption and carrier transport medium in x-ray photodiodes. While the thermal / mechanical robustness and high x-ray transmission of diamond make such devices attractive for synchrotron instrumentation, state-of-the-art quality material and electrical interfaces further make such detectors feasible. The present work develops methodology for attaining calculable responsivity (photocurrent yield) over a wide range of photon energies (0.2 to 28 keV) to within 5% accuracy. These methods achieve linear response for up to 0.2 W absorbed x-ray power and response time as low as 1 ns. Details of contact formation / robustness and bias configuration are explored.

  10. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    PubMed Central

    Caputo, Domenico; de Cesare, Giampiero; Fanelli, Corrado; Nascetti, Augusto; Ricelli, Alessandra; Scipinotti, Riccardo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity between OTA concentration and the sensor photocurrent over almost three orders of magnitude. The minimum detected OTA concentration is equal to 0.1ng, showing that the presented system has the potential for a low cost system suitable for the early detection of toxins in foods.

  11. Avalanche photodiode based time-of-flight mass spectrometry

    SciTech Connect

    Ogasawara, Keiichi Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C.

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  12. High resolution, low energy avalanche photodiode X-ray detectors

    NASA Technical Reports Server (NTRS)

    Farrell, R.; Vanderpuye, K.; Entine, G.; Squillante, M. R.

    1991-01-01

    Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

  13. Comprehensive analysis of new near-infrared avalanche photodiode structure

    NASA Astrophysics Data System (ADS)

    Czuba, Krzysztof; Jurenczyk, Jaroslaw; Kaniewski, Janusz

    2014-01-01

    The essential steps in simulations of modern separate absorption, grading, charge, and multiplication avalanche photodiode and their results are discussed. All simulations were performed using two commercial technology computer-aided design type software packages, namely Silvaco ATLAS and Crosslight APSYS. Comparison between those two frameworks was made and differences between them were pointed out. Several examples of the influence of changes made in individual layers on overall device characteristics have been shown. Proper selection of models and their parameters as well as its significance on results has been illustrated. Additionally, default values of material parameters were revised and adequate values from the literature were entered. Simulated characteristics of optimized structure were compared with ones obtained from measurements of real devices (e.g., current-voltage curves). Finally, properties of crucial layers in the structure were discussed.

  14. Feedback in close-coupled axial VCSEL-photodiode pairs

    NASA Astrophysics Data System (ADS)

    Geib, Kent M.; Serkland, Darwin K.; Peake, Gregory M.; Sanchez, Victoria M.

    2011-03-01

    We have been investigating the use of coaxial multimode VCSEL/PD (vertical cavity surface emitting laser/photodiode) pairs for positional sensing with emitter to target mirror distances on the order of 1mm. We have observed large variations in signal levels due to the strong optical feedback in these close-coupled systems, employing either heterogeneously integrated commercial components or our own monolithically integrated devices. The feedback effect is larger than anticipated due to the annular geometry of the photodetector. Even though there is very little change in the measured VCSEL total output power, the optical feedback induces variations in the transverse mode distributions in these multimode VCSELs. The higher order modes have a larger divergence angle resulting in changes in the reflected light power incident upon the active detector area for a large range of emitter/mirror separations. We will review the experimental details and provide strategies for avoiding these variations in detected power.

  15. Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

    1999-01-01

    Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

  16. Cesium hafnium chloride scintillator coupled with an avalanche photodiode photodetector

    NASA Astrophysics Data System (ADS)

    Kurosawa, S.; Kodama, S.; Yokota, Y.; Horiai, T.; Yamaji, A.; Shoji, Y.; Král, R.; Pejchal, J.; Ohashi, Y.; Kamada, K.; Nikl, M.; Yoshikawa, A.

    2017-02-01

    Optical and scintillation properties of pure Cs2HfCl6 (CHC) single crystals were investigated. In particular, light output and energy resolution were measured using a Si avalanche photodiode (Si-APD), since the Si-APD has sufficient quantum efficiency of around 70 % at emission wavelength region of CHC around 420 nm. This CHC single crystal grown using the vertical Bridgeman method showed light output of 37,000± 2,000 photons/MeV . The FWHM energy resolution was determined to be 3.7± 0.5× (E/662 keV)‑0.85± 0.03[%], where E [keV] is the gamma-ray energy. Moreover, the temperature dependence of the light output was stable from ‑5 to 30 oC, while the light output increased below ‑10 oC.

  17. Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

    NASA Astrophysics Data System (ADS)

    Yang, Li; Sheng-Kai, Liao; Fu-Tian, Liang; Qi, Shen; Hao, Liang; Cheng-Zhi, Peng

    2016-03-01

    Not Available Supported by the Chinese Academy of Sciences Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Shanghai Branch, University of Science and Technology of China, and the National Natural Science Foundation of China under Grant No 11405172.

  18. Tapered LSO arrays for small animal PET

    NASA Astrophysics Data System (ADS)

    Yang, Yongfeng; St. James, Sara; Wu, Yibao; Du, Huini; Qi, Jinyi; Farrell, Richard; Dokhale, Purushottam A.; Shah, Kanai S.; Vaigneur, Keith; Cherry, Simon R.

    2011-01-01

    By using detectors with good depth encoding accuracy (~2 mm), an animal PET scanner can be built with a small ring diameter and thick crystals to simultaneously obtain high spatial resolution and high sensitivity. However, there will be large wedge-shaped gaps between detector modules in such a scanner if traditional cuboid crystal arrays are used in a polygonal arrangement. The gaps can be minimized by using tapered scintillator arrays enabling the sensitivity of the scanner to be further improved. In this work, tapered lutetium oxyorthosilicate (LSO) arrays with different crystal dimensions and different combinations of inter-crystal reflector and crystal surface treatments were manufactured and their performance was evaluated. Arrays were read out from both ends by position-sensitive avalanche photodiodes (PSAPDs). In the optimal configuration, arrays consisting of 0.5 mm LSO elements could be clearly resolved and a depth of interaction resolution of 2.6 mm was obtained for a 20 mm thick array. For this tapered array, the intrinsic spatial is degraded from 0.67 to 0.75 mm compared to a standard cuboidal array with similar dimensions, while the increase in efficiency is 41%. Tapered scintillator arrays offer the prospect of improvements in sensitivity and sampling for small-bore scanners, without large increases in manufacturing complexity.

  19. Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

    NASA Technical Reports Server (NTRS)

    Jorquera, Carlos; Bruegge, Carol; Duval, Valerie

    1992-01-01

    The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

  20. Improving an organic photodiode by incorporating a tunnel barrier between the donor and acceptor layers

    NASA Astrophysics Data System (ADS)

    Campbell, I. H.; Crone, B. K.

    2012-07-01

    We demonstrate increased photocurrent quantum efficiency in a model donor/acceptor (tetracene/C60) photodiode by incorporating an insulating tunnel barrier between the tetracene and C60 layers. Photodiode efficiency results from the interplay of a number of processes which add to or subtract from the overall device efficiency. The positive rates are those of exciton dissociation and charge separation, the negative rates include exciton and charge transfer complex recombination. We show that by introducing a thin insulating layer between the donor and acceptor layers in a photodiode, we can modify the exciton dissociation and charge transfer complex recombination rates and improve device performance.

  1. Linear charge coupled device detector array for imaging light propagating in an integrated thin-film optical waveguide

    NASA Technical Reports Server (NTRS)

    Chen, C. L.; Boyd, J. T.

    1976-01-01

    Device design, fabrication, and operation of a linear charge coupled device (CCD) detector array integrated with a thin film optical waveguide and applications of this structure to integrated optical signal processing and fiber optical communications were discussed. A two phase, overlapping-gate CCD is connected in parallel by means of a series of gates to an array of photodiodes. The photodiode provides an electrode free surface region so that a highly efficient waveguide detector coupling technique can be implemented. A thermally-oxidized layer of SiO2 forms an effective substrate for the optical waveguide.

  2. Development of high performance SWIR InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Nagi, Richie; Bregman, Jeremy; Mizuno, Genki; Oduor, Patrick; Olah, Robert; Dutta, Achyut K.; Dhar, Nibir K.

    2015-05-01

    Banpil Photonics has developed a novel InGaAs based photodetector array for Short-Wave Infrared (SWIR) imaging, for the most demanding security, defense, and machine vision applications. These applications require low noise from both the detector and the readout integrated circuit arrays. In order to achieve high sensitivity, it is crucial to minimize the dark current generated by the photodiode array. This enables the sensor to function in extremely low light situations, which enables it to successfully exploit the benefits of the SWIR band. In addition to minimal dark current generation, it is essential to develop photodiode arrays with higher operating temperatures. This is critical for reducing the power consumption of the device, as less energy is spent in cooling down the focal plane array (in order to reduce the dark current). We at Banpil Photonics are designing, simulating, fabricating and testing SWIR InGaAs arrays, and have achieved low dark current density at room temperature. This paper describes Banpil's development of the photodetector array. We also highlight the fabrication technique used to reduce the amount of dark current generated by the photodiode array, in particular the surface leakage current. This technique involves the deposition of strongly negatively doped semiconductor material in the area between the pixels. This process reduces the number of dangling bonds present on the edges of each pixel, which prevents electrons from being swept across the surface of the pixels. This in turn drastically reduces the amount of surface leakage current at each pixel, which is a major contributor towards the total dark current. We present the optical and electrical characterization data, as well as the analysis that illustrates the dark current mechanisms. Also highlighted are the challenges and potential opportunities for further reduction of dark current, while maintaining other parameters of the photodiode array, such as size, weight, temperature

  3. PiN photodiode performance comparison for dosimetry in radiology applications.

    PubMed

    Oliveira, Charles N P; Khoury, Helen J; Santos, Edval J P

    2016-12-01

    Performance comparison of selected photodiodes for usage as radiation detectors for radio-protection is presented. In this study, based on the criteria of minimum sensitive area of 5mm(2), minimum half angle 60° and low cost, four commercial photodiodes are selected for evaluation: SFH205, SFH206, BPW34, and BPX90F. Photodiodes are low cost, small volume and lightweight detectors. As an electronic transducer, photodiode detector is an attractive approach for the development of low power portable electronic dosimeter for direct-reading real-time radiation dose measurement. The devices have been studied with respect to sensitivity (efficiency) in X-rays and gamma rays detection, repeatability and linearity in air kerma.

  4. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

    PubMed

    Li, Zhi; Fu, Yang; Piels, Molly; Pan, Huapu; Beling, Andreas; Bowers, John E; Campbell, Joe C

    2011-12-12

    We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

  5. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

    PubMed

    Kang, Y; Zadka, M; Litski, S; Sarid, G; Morse, M; Paniccia, M J; Kuo, Y-H; Bowers, J; Beling, A; Liu, H D; McIntosh, D C; Campbell, J; Pauchard, A

    2008-06-23

    We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.

  6. Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)

    NASA Astrophysics Data System (ADS)

    Xie, Xiaojun; Ramaswamy, Anand; Shen, Yang; Yang, Zhanyu; Jacob-Mitos, Matt; Wang, Ye; Zang, Jizhao; Norberg, Erik; Fish, Greg; Campbell, Joe C.; Beling, Andreas

    2016-09-01

    We report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm2 photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.

  7. Numerical analysis of the temperature field in silicon avalanche photodiode by millisecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Di; Jin, Guangyong; Wei, Zhi; Zhao, Hongyu

    2016-10-01

    Recent years, millisecond laser become a research hotspot. Avalanche photodiode (APD) based on silicon structure has excellent characteristics such as low noise and high-sensitivity. It is key components in receives for long-haul high-bit-rate optical communication system. The failure mechanism of silicon APD remains quite unknown, although some silicon p-i-n photodiode failure modes have been speculated. The COMSOL Multiphysics finite element analysis software was utilized in this paper. And the 2D model, which based on heat conduction equation, was established to simulate the temperature field of the silicon avalanche photodiode irradiated by millisecond laser. The model presented in the following section is a work which considers only melting of silicon by a millisecond laser pulse. The temperature dependences of material properties are taken into account, which has a great influence on the temperature fields indicated by the numerical results. The pulsed laser-induced transient temperature fields in silicon avalanche photodiode are obtained, which will be useful in the research on the mechanism of interactions between millisecond laser and photodiode. The evolution of temperature at the central point of the top surface, the temperature distribution along the radial direction in the end of laser irradiation and the temperature distribution along the axial direction in the end of laser irradiation were considered. Meanwhile, the fluence threshold value was obtained through the model. The conclusions had a reference value for revealing the mechanism of interactions between millisecond laser and the silicon avalanche photodiode.

  8. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    NASA Astrophysics Data System (ADS)

    Duun, Sune; Haahr, Rasmus G.; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V.

    2010-07-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz-1/2 cm-1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  9. Magnetic arrays

    SciTech Connect

    Trumper, David L.; Kim, Won-jong; Williams, Mark E.

    1997-05-20

    Electromagnet arrays which can provide selected field patterns in either two or three dimensions, and in particular, which can provide single-sided field patterns in two or three dimensions. These features are achieved by providing arrays which have current densities that vary in the windings both parallel to the array and in the direction of array thickness.

  10. Magnetic arrays

    DOEpatents

    Trumper, D.L.; Kim, W.; Williams, M.E.

    1997-05-20

    Electromagnet arrays are disclosed which can provide selected field patterns in either two or three dimensions, and in particular, which can provide single-sided field patterns in two or three dimensions. These features are achieved by providing arrays which have current densities that vary in the windings both parallel to the array and in the direction of array thickness. 12 figs.

  11. Avalanche photodiode photon counting receivers for space-borne lidars

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1991-01-01

    Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

  12. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  13. High Response in a Tellurium-Supersaturated Silicon Photodiode

    NASA Astrophysics Data System (ADS)

    Wang, Xi-Yuan; Huang, Yong-Guang; Liu, De-Wei; Zhu, Xiao-Ning; Zhu, Hong-Liang

    2013-03-01

    Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500nm. The n+ p photodiodes fabricated from these materials show high response (6.9A/W at 1000nm) with reverse bias 12 V at room temperature. The corresponding cut-off wavelength is 1258nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0 V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz—Keldysh effect.

  14. New gamma detector modules based on micropixel avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Ahmadov, F.; Ahmadov, G.; Guliyev, E.; Madatov, R.; Sadigov, A.; Sadygov, Z.; Suleymanov, S.; Akberov, R.; Nuriyev, S.; Zerrouk, F.

    2017-01-01

    In this paper presented the results of the ionizing radiation detector modules, which developed on the basis of a new generation of micropixel avalanche photodiode (MAPD) of MAPD-3NK type. The samples were produced in cooperation with the Zecotek Photonics and characterized by the following parameters: sensitive area—3.7 mm × 3.7 mm, density of pixels—10000 pixels/mm2, photon detection efficiency—35-40% (at wavelength of 450-550 nm) and operation voltage—91 V. The beta particle and gamma ray detection performance of MAPD with different single scintillation crystal such as NaI, LFS and p-terphenyl was investigated. The gamma ray detector modules demonstrated a perfect linear behavior of detected signal amplitudes as a function of the gamma ray energy (from 26.3 keV up to 1.33 MeV). Energy resolution for 662 keV gamma rays was 11.2% and the minimum detectable energy was 26.3 keV.

  15. Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

    2000-01-01

    Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

  16. Enhanced Red and Near Infrared Detection in Flow Cytometry Using Avalanche Photodiodes

    PubMed Central

    Lawrence, William G.; Varadi, Gyula; Entine, Gerald; Podniesinski, Edward; Wallace, Paul K.

    2008-01-01

    Background Polychromatic flow cytometry enables detailed identification of cell phenotype using multiple fluorescent parameters. The photomultiplier tubes used to detect fluorescence in current instruments limit the sensitivity in the long wavelength spectral range. We demonstrate the flow cytometric applications of silicon avalanche photodiodes, which have improved red sensitivity and a working fluorescence detection range beyond 1000 nm. Methods A comparison of the wavelength dependent performance of the avalanche photodiode and photomultiplier tube was carried out using pulsed light emitting diode sources, calibrated test beads and biological samples. A breadboard flow cytometer test bench was constructed to compare the performance of photomultiplier tubes and avalanche photodiode detectors. The avalanche photodiode used an additional amplifier stage to match the internal gain of the photomultiplier tube. Results The resolution of the avalanche photodiode and photomultiplier tube was compared for flow cytometry applications using a pulsed light emitting diode source over the 500 nm to 1060 nm spectral range. These measurements showed the relative changes in the signal to noise performance of the APD and PMT over a broad spectral range. Both the avalanche photodiode and photomultiplier tubes were used to measure the signal to noise response for a set of 6 peak calibration beads over the 530 to 800 nm wavelength range. CD4 positive cells labeled with antibody conjugated phycoerythrin or 800 nm quantum dots were identified by simultaneous detection using the avalanche photodiode and the photomultiplier tube. The ratios of the intensities of the CD4− and CD4+ populations were found to be similar for both detectors in the visible wavelengths, but only the avalanche photodiode was able to separate these populations at wavelengths above 800 nm. Conclusions These measurements illustrate the differences in APD and PMT performance at different wavelengths and signal

  17. Photodiode Preamplifier for Laser Ranging With Weak Signals

    NASA Technical Reports Server (NTRS)

    Abramovici, Alexander; Chapsky, Jacob

    2007-01-01

    An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

  18. Advanced active quenching circuits for single-photon avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  19. Application of visible linear array technology to earth observation sensors

    NASA Technical Reports Server (NTRS)

    Noll, R. E.; Tracy, R. A.

    1975-01-01

    The present paper identifies the systems engineering aspects of applying solid-state technology to earth observations applications being traditionally performed by point (or multiple-point) detector line scanned mechanisms. It is shown that the translation from a basically serial data flow point-detector mechanically-scanned sensor to a solid state highly parallel linear-array pushbroom sensor results in minimizing mechanical complexity and maximizing electronics complexity, with increased demands upon optical performance in some applications. Technical aspects relevant to highly parallel photodiode linear-array pushbroom applications are discussed. Examples of systems engineering applications are provided.

  20. A novel PIN photodetector with double linear arrays for rainfall prediction

    NASA Astrophysics Data System (ADS)

    Yan, Yao; Xiong, Liu; Li, Yuan; Zhaohua, Zhang; Tianling, Ren

    2015-09-01

    A novel PIN (positive-intrinsic-negative) photodetector with double linear arrays that can be used to measure the diameter of precipitation particles and the space between two droplets in clouds is proposed. The sensitive unit is the PIN photodiode. The chip with a size of 10 × 8 mm2 has 128 photodiodes, and each row has 64 photodiodes. The device design, fabrication process and package are introduced in the paper. The photocurrent of the packaged chip was systematically tested with a red laser. Also the diameter of one water drop and the space between two water drops were measured. The minimum raindrop diameter which can be tested in this paper is 100 μm. This device can be useful for rainfall prediction. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

  1. Kokkos Array

    SciTech Connect

    Edwards Daniel Sunderland, Harold Carter

    2012-09-12

    The Kokkos Array library implements shared-memory array data structures and parallel task dispatch interfaces for data-parallel computational kernels that are performance-portable to multicore-CPU and manycore-accelerator (e.g., GPGPU) devices.

  2. Nanocylinder arrays

    DOEpatents

    Tuominen, Mark; Schotter, Joerg; Thurn-Albrecht, Thomas; Russell, Thomas P.

    2007-03-13

    Pathways to rapid and reliable fabrication of nanocylinder arrays are provided. Simple methods are described for the production of well-ordered arrays of nanopores, nanowires, and other materials. This is accomplished by orienting copolymer films and removing a component from the film to produce nanopores, that in turn, can be filled with materials to produce the arrays. The resulting arrays can be used to produce nanoscale media, devices, and systems.

  3. Nanocylinder arrays

    DOEpatents

    Tuominen, Mark; Schotter, Joerg; Thurn-Albrecht, Thomas; Russell, Thomas P.

    2009-08-11

    Pathways to rapid and reliable fabrication of nanocylinder arrays are provided. Simple methods are described for the production of well-ordered arrays of nanopores, nanowires, and other materials. This is accomplished by orienting copolymer films and removing a component from the film to produce nanopores, that in turn, can be filled with materials to produce the arrays. The resulting arrays can be used to produce nanoscale media, devices, and systems.

  4. Aerosol optical depth as observed by the Mars Science Laboratory REMS UV photodiodes

    NASA Astrophysics Data System (ADS)

    Smith, Michael D.; Zorzano, María-Paz; Lemmon, Mark; Martín-Torres, Javier; Mendaza de Cal, Teresa

    2016-12-01

    Systematic observations taken by the REMS UV photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately 1.75 Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around Ls=270°, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time.

  5. Aerosol Optical Depth as Observed by the Mars Science Laboratory REMS UV Photodiodes

    NASA Technical Reports Server (NTRS)

    Smith, M. D.; Zorzano, M.-P.; Lemmon, M.; Martin-Torres, J.; Mendaza de Cal, T.

    2017-01-01

    Systematic observations taken by the REMS UV photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately two Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around Ls=270deg, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time. A full description of these observations, the retrieval algorithm, and the results can be found in Smith et al. (2016).

  6. Characterization of novel Hamamatsu Multi Pixel Photon Counter (MPPC) arrays for the GlueX experiment

    SciTech Connect

    Soto, Orlando; Rojas, Rimsky; Kuleshov, Sergey V.; Hakobyan, Hayk; Toro, Alam; Brooks, William K.

    2013-12-01

    The novel Hamamatsu Multi Pixel Photon Counter Array S12045(X) is an array of 16 individual MPPCs (3x3 mm{sup 2}) (further in the paper MPPC array channel) each with 3600 G-APD (Geiger-mode Avalanche Photodiodes) pixels (50x50 [{micro}m{sup 2}]). Each MPPC in the array works with its individual reverse bias voltage mode (around 70 V). The paper summarizes the characterization process of MPPC arrays used in GlueX experiment (Hall D, Jefferson Lab). We studied the main features of each MPPC array channel for 2800 MPPC arrays at different temperatures. Two measurement stations were built to extract gain, breakdown voltage, photo detection efficiency (PDE), optical crosstalk and dark rate for each MPPC array channel. The hardware and the data analysis are described, which includes new analytical expressions to obtain the mean number of photo-electrons and optical crosstalk. The dynamical behavior of characterization parameters is presented as well.

  7. High-performance fused indium gallium arsenide/silicon photodiode

    NASA Astrophysics Data System (ADS)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated

  8. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    NASA Astrophysics Data System (ADS)

    Keffous, A.; Zitouni, M.; Belkacem, Y.; Menari, H.; Chergui, W.

    2002-10-01

    In this work, we present a design and characterization of Schottky barrier Au/n-Si/Li based UV-VIS photodiode for application, such as solar UV monitoring, flame sensors and UV astronomy. The Schottky photodiode was realized with a thin layer of gold (Au) at the front side of high purity n-type silicon and lithium (Li) on the back side as back-surface-field (Li-BSF). The Li-BSF used was a new method which allow us to modulate and choice the depletion width. I- V characteristic, capacitance and spectral response were performed, the results were found in agreement with those determined by simulation method. A quantum efficiency (QE) of 47% at about 550 nm wavelength was obtained using only a thin gold layer as sensitive area. The thickness of gold used on the photodiode was around 125 Å, where 58% of light transmission was carried out.

  9. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    SciTech Connect

    Siwak, N. P.; Fan, X. Z.; Ghodssi, R.; Kanakaraju, S.; Richardson, C. J. K.

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  10. Photosensitivity of Te-doped silicon photodiodes fabricated using femtosecond laser irradiation.

    PubMed

    Li, Rui; Du, Lingyan; Tang, Fei; Jiang, Yadong; Wu, Zhiming

    2016-12-20

    Microstructured Te-doped silicon is prepared via a femtosecond laser irradiating Si coated with Si-Te bilayer films, and photodiodes are successfully fabricated from this material. The samples are thermally annealed at 773 K for three different time durations. The effects of annealing time on microstructures, infrared absorptance, and photosensitivity of Te-doped silicon are investigated. From the scanning electronic microscope images and the optical absorptance spectra, the results show that the infrared absorptance decreases with the increase of annealing time durations, while the infrared photoresponse follows an opposite tendency. At 1064 nm, the responsivity achieves 2.4836 A/W at -10  V reverse bias for the Te-doped silicon photodiode annealed at 775 K for 2 h, which is higher than that of usual commercial Si photodiodes. These results are important for the fabrication of Te-doped silicon and facilitate its application in infrared detectors.

  11. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  12. Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

    SciTech Connect

    Vygranenko, Y.; Vieira, M.; Sazonov, A.; Heiler, G.; Tredwell, T.; Nathan, A.

    2009-12-28

    This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm{sup 2} and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

  13. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    NASA Technical Reports Server (NTRS)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  14. Silicon photodiode soft x-ray detectors for pulsed power experiments

    SciTech Connect

    Idzorek, G.C.; Bartlett, R.J.

    1997-10-01

    Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds.

  15. Improved x-ray detection and particle identification with avalanche photodiodes

    SciTech Connect

    Diepold, Marc Franke, Beatrice; Götzfried, Johannes; Hänsch, Theodor W.; Krauth, Julian J.; Mulhauser, Françoise; Nebel, Tobias; Pohl, Randolf; Fernandes, Luis M. P.; Amaro, Fernando D.; Gouvea, Andrea L.; Monteiro, Cristina M. B.; Santos, Joaquim M. F. dos; Machado, Jorge; Amaro, Pedro; Santos, José Paulo; and others

    2015-05-15

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g., to distinguish between x-rays and MeV electrons in our experiment.

  16. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  17. Downsampling Photodetector Array with Windowing

    NASA Technical Reports Server (NTRS)

    Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

    2012-01-01

    In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated

  18. Femtosecond laser-drilling-induced HgCdTe photodiodes.

    PubMed

    Zha, F-X; Li, M S; Shao, J; Yin, W T; Zhou, S M; Lu, X; Guo, Q T; Ye, Z H; Li, T X; Ma, H L; Zhang, B; Shen, X C

    2010-04-01

    Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be pn junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.

  19. Development of High-Speed IV-VI Photodiodes

    DTIC Science & Technology

    1976-06-01

    fflcUncy. n, «nd th« r«fUctlon- losa -llmlted quentun offlclency. nR, «« follow« I ( I * - Vc • Consider th« unlfor« array of stripes shown In Fig. 59...responalvltlea at 170IC that correapond to the reflectlon- losa limit for approximately A mil-square active areaa54^ Thla Implies that the diffusion length

  20. Note: Effect of photodiode aluminum cathode frame on spectral sensitivity in the soft x-ray energy band

    SciTech Connect

    McGarry, M. B. Den Hartog, D. J.; Goetz, J. A.; Johnson, J.; Franz, P.

    2014-09-15

    Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the measured x-ray signal below ∼6 keV. This effect has a small systematic impact on the electron temperature calculated from measurements of soft x-ray bremsstrahlung emission from a high-temperature plasma. Although the systematic error introduced by the aluminum frame is only a few percent in typical experimental conditions on the Madison Symmetric Torus, it may be more significant for other instruments that use similar detectors.

  1. Novel wearable-type biometric devices based on skin tissue optics with multispectral LED–photodiode matrix

    NASA Astrophysics Data System (ADS)

    Jo, Young Chang; Kim, Hae Na; Kang, Jae Hwan; Hong, Hyuck Ki; Choi, Yeon Shik; Jung, Suk Won; Kim, Sung Phil

    2017-04-01

    In this study, we examined the possibility of using a multispectral skin photomatrix (MSP) module as a novel biometric device. The MSP device measures optical patterns of the wrist skin tissue. Optical patterns consist of 2 × 8 photocurrent intensities of photodiode arrays, which are generated by optical transmission and diffuse reflection of photons from LED light sources with variable wavelengths into the wrist skin tissue. Optical patterns detected by the MSP device provide information on both the surface and subsurface characteristics of the human skin tissue. We found that in the 21 subjects we studied, they showed their unique characteristics, as determined using several wavelengths of light. The experimental results show that the best personal identification accuracy can be acquired using a combination of infrared light and yellow light. This novel biometric device, the MSP module, exhibited an excellent false acceptance rate (FAR) of 0.3% and a false rejection rate (FRR) of 0.0%, which are better than those of commercialized biometric devices such as a fingerprint biometric system. From these experimental results, we found that people exhibit unique optical patterns of their inner-wrist skin tissue and this uniqueness could be used for developing novel high-accuracy personal identification devices.

  2. Breadboard linear array scan imager using LSI solid-state technology

    NASA Technical Reports Server (NTRS)

    Tracy, R. A.; Brennan, J. A.; Frankel, D. G.; Noll, R. E.

    1976-01-01

    The performance of large scale integration photodiode arrays in a linear array scan (pushbroom) breadboard was evaluated for application to multispectral remote sensing of the earth's resources. The technical approach, implementation, and test results of the program are described. Several self scanned linear array visible photodetector focal plane arrays were fabricated and evaluated in an optical bench configuration. A 1728-detector array operating in four bands (0.5 - 1.1 micrometer) was evaluated for noise, spectral response, dynamic range, crosstalk, MTF, noise equivalent irradiance, linearity, and image quality. Other results include image artifact data, temporal characteristics, radiometric accuracy, calibration experience, chip alignment, and array fabrication experience. Special studies and experimentation were included in long array fabrication and real-time image processing for low-cost ground stations, including the use of computer image processing. High quality images were produced and all objectives of the program were attained.

  3. Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Hays, D. A.

    1985-01-01

    Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.

  4. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    NASA Technical Reports Server (NTRS)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  5. The blocking probability of Geiger-mode avalanche photo-diodes

    NASA Technical Reports Server (NTRS)

    Moision, Bruce; Srinivasan, Meera; Hamkins, Jon

    2005-01-01

    When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.

  6. Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    2005-01-01

    We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

  7. Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes.

    PubMed

    Wu, Zhenghui; Yao, Weichuan; London, Alexander E; Azoulay, Jason D; Ng, Tse Nga

    2017-01-18

    Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 10(12) Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to -12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.

  8. Experimental analysis of a novel and low-cost pin photodiode dosimetry system for diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Nazififard, Mohammad; Suh, Kune Y.; Mahmoudieh, Afshin

    2016-07-01

    Silicon PIN photodiode has recently found broad and exciting applications in the ionizing radiation dosimetry. In this study a compact and novel dosimetry system using a commercially available PIN photodiode (BPW34) has been experimentally tested for diagnostic radiology. The system was evaluated with clinical beams routinely used for diagnostic radiology and calibrated using a secondary reference standard. Measured dose with PIN photodiode (Air Kerma) varied from 10 to 430 μGy for tube voltages from 40 to 100 kVp and tube current from 0.4 to 40 mAs. The minimum detectable organ dose was estimated to be 10 μGy with 20% uncertainty. Results showed a linear correlation between the PIN photodiode readout and dose measured with standard dosimeters spanning doses received. The present dosimetry system having advantages of suitable sensitivity with immediate readout of dose values, low cost, and portability could be used as an alternative to passive dosimetry system such as thermoluminescent dosimeter for dose measurements in diagnostic radiology.

  9. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

    NASA Astrophysics Data System (ADS)

    Juntunen, Mikko A.; Heinonen, Juha; Vähänissi, Ville; Repo, Päivikki; Valluru, Dileep; Savin, Hele

    2016-12-01

    Ideal photodiodes can detect all incoming photons independently of the wavelength, angle or intensity of the incident light. Present-day photodiodes notably suffer from optical losses and generated charge carriers are often lost via recombination. Here, we demonstrate a device with an external quantum efficiency above 96% over the wavelength range 250-950 nm. Instead of a conventional p-n junction, we use negatively charged alumina to form an inversion layer that generates a collecting junction extending to a depth of 30 µm in n-type silicon with bulk resistivity larger than 10 kΩ cm. We enhance the collection efficiency further by nanostructuring the photodiode surface, which results in higher effective charge density and increased charge-carrier concentration in the inversion layer. Additionally, nanostructuring and efficient surface passivation allow for a reliable device response with incident angles up to 70°. We expect the considered device to improve data quality, reduce the area of photodiodes as well as decrease the cost per pixel.

  10. Use of a vacuum-planar photodiode to drive an electro-optic Q switch directly.

    PubMed

    Stankov, K A; Milev, I Y

    1991-12-20

    A vacuum photodiode was used to drive a Pockels cell directly in an optical-feedback arrangement. This technique was used to achieve Q switching and a single-longitudinal-mode operation in a flash-lamp-pumped Nd:YAG laser. Synchronization within 2 ns with an external short-pulse laser source was demonstrated.

  11. Studies of High Performance Indium Gallium Arsenide Metal-Semiconductor Photodiodes.

    NASA Astrophysics Data System (ADS)

    Gao, Wei

    1995-01-01

    The purpose of this study is to achieve high speed and high responsivity metal-semiconductor-metal (MSM) photodiodes, which includes material growth, device design, fabrication, and testing. Liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) growth were used to grow high purity InGaAs layers. To obtain high purity InGaAs layers, rare-earth elements (Yb, Ga, and Er) were used during LPE growth. The rare-earth elements react strongly with donor impurities to purify the epitaxial layers, resulting in higher mobility, lower carrier concentration, and higher photoluminescence efficiency in the rare-earth doped melt grown InGaAs layer. Unfortunately, rare-earth elements have high impurity levels and hardly interact with acceptor impurities; thus, causing undesired deep levels. Both abrupt and digital superlattice InAlAs barrier enhancement InGaAs MSM photodiodes were grown by MBE. To improve the photoresponsivity, a transparent conductive material, cadmium tin oxide (CTO) was used as the MSM contacts. The CTO functions as a Schottky contact, an optical window and an anti-reflection coating. The Schottky barrier height, which is vitally important for MSM photodiodes, was studied with CTO, ITO, Au, Ti, and Pt on InAlAs using the Norde method. The CTO MSM photodiodes showed a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. Abrupt barrier enhancement MSM photodiodes using CTO and Ti/Au electrodes demonstrated 3-dB bandwidths of 0.3 and 0.8 GHz, respectively. However, digital grading of the heterojunction facilitated better carrier extraction resulting in increased bandwidths of 1.3 and 7.1 GHz, respectively, for CTO and Ti/Au. It was demonstrated that CTO possesses a low resistivity, high transparency, and good Schottky barrier height, which makes CTO a very attractive transparent conductor suitable for optoelectronic applications. Lastly, four novel structures were proposed to improve the responsivity and the bandwidth of

  12. Pixel multiplexing technique for real-time three-dimensional-imaging laser detection and ranging system using four linear-mode avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Xu, Fan; Wang, Yuanqing; Li, Fenfang

    2016-03-01

    The avalanche-photodiode-array (APD-array) laser detection and ranging (LADAR) system has been continually developed owing to its superiority of nonscanning, large field of view, high sensitivity, and high precision. However, how to achieve higher-efficient detection and better integration of the LADAR system for real-time three-dimensional (3D) imaging continues to be a problem. In this study, a novel LADAR system using four linear mode APDs (LmAPDs) is developed for high-efficient detection by adopting a modulation and multiplexing technique. Furthermore, an automatic control system for the array LADAR system is proposed and designed by applying the virtual instrumentation technique. The control system aims to achieve four functions: synchronization of laser emission and rotating platform, multi-channel synchronous data acquisition, real-time Ethernet upper monitoring, and real-time signal processing and 3D visualization. The structure and principle of the complete system are described in the paper. The experimental results demonstrate that the LADAR system is capable of achieving real-time 3D imaging on an omnidirectional rotating platform under the control of the virtual instrumentation system. The automatic imaging LADAR system utilized only 4 LmAPDs to achieve 256-pixel-per-frame detection with by employing 64-bit demodulator. Moreover, the lateral resolution is ˜15 cm and range accuracy is ˜4 cm root-mean-square error at a distance of ˜40 m.

  13. SNP Arrays

    PubMed Central

    Louhelainen, Jari

    2016-01-01

    The papers published in this Special Issue “SNP arrays” (Single Nucleotide Polymorphism Arrays) focus on several perspectives associated with arrays of this type. The range of papers vary from a case report to reviews, thereby targeting wider audiences working in this field. The research focus of SNP arrays is often human cancers but this Issue expands that focus to include areas such as rare conditions, animal breeding and bioinformatics tools. Given the limited scope, the spectrum of papers is nothing short of remarkable and even from a technical point of view these papers will contribute to the field at a general level. Three of the papers published in this Special Issue focus on the use of various SNP array approaches in the analysis of three different cancer types. Two of the papers concentrate on two very different rare conditions, applying the SNP arrays slightly differently. Finally, two other papers evaluate the use of the SNP arrays in the context of genetic analysis of livestock. The findings reported in these papers help to close gaps in the current literature and also to give guidelines for future applications of SNP arrays. PMID:27792140

  14. Enthalpy arrays

    PubMed Central

    Torres, Francisco E.; Kuhn, Peter; De Bruyker, Dirk; Bell, Alan G.; Wolkin, Michal V.; Peeters, Eric; Williamson, James R.; Anderson, Gregory B.; Schmitz, Gregory P.; Recht, Michael I.; Schweizer, Sandra; Scott, Lincoln G.; Ho, Jackson H.; Elrod, Scott A.; Schultz, Peter G.; Lerner, Richard A.; Bruce, Richard H.

    2004-01-01

    We report the fabrication of enthalpy arrays and their use to detect molecular interactions, including protein–ligand binding, enzymatic turnover, and mitochondrial respiration. Enthalpy arrays provide a universal assay methodology with no need for specific assay development such as fluorescent labeling or immobilization of reagents, which can adversely affect the interaction. Microscale technology enables the fabrication of 96-detector enthalpy arrays on large substrates. The reduction in scale results in large decreases in both the sample quantity and the measurement time compared with conventional microcalorimetry. We demonstrate the utility of the enthalpy arrays by showing measurements for two protein–ligand binding interactions (RNase A + cytidine 2′-monophosphate and streptavidin + biotin), phosphorylation of glucose by hexokinase, and respiration of mitochondria in the presence of 2,4-dinitrophenol uncoupler. PMID:15210951

  15. Array tomography: imaging stained arrays.

    PubMed

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time-consuming and require some practice to perfect. In this protocol, tissue arrays are imaged using conventional wide-field fluorescence microscopy. Images can be captured manually or, with the appropriate software and hardware, the process can be automated.

  16. Array tomography: production of arrays.

    PubMed

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time consuming and require some practice to perfect. This protocol describes the sectioning of embedded tissues and the mounting of the serial arrays. The procedures require some familiarity with the techniques used for ultramicrotome sectioning for electron microscopy.

  17. Infrared Arrays

    NASA Astrophysics Data System (ADS)

    McLean, I.; Murdin, P.

    2000-11-01

    Infrared arrays are small electronic imaging devices subdivided into a grid or `array' of picture elements, or pixels, each of which is made of a material sensitive to photons (ELECTROMAGNETIC RADIATION) with wavelengths much longer than normal visible light. Typical dimensions of currently available devices are about 27-36 mm square, and formats now range from 2048×2048 pixels for the near-infra...

  18. A comparison of imaging methods for use in an array biosensor.

    PubMed

    Golden, Joel P; Ligler, Frances S

    2002-09-01

    An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

  19. A comparison of imaging methods for use in an array biosensor

    NASA Technical Reports Server (NTRS)

    Golden, Joel P.; Ligler, Frances S.

    2002-01-01

    An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

  20. Evaluation of Photodiode and Thermopile Pyranometers for Photovoltaic Applications: Preprint

    SciTech Connect

    Sengupta, M.; Gotseff, P.; Stoffel, T.

    2012-09-01

    Accurately determining PV module performance in the field requires measurement of solar irradiance reaching the PV panel at a high level of accuracy and known uncertainty. Silicon detectors used in various solar energy measuring instruments including reference cells are potentially an attractive choice for multiple reasons that include faster responsivity than thermopile detectors, cheaper cost and lower maintenance. The main drawback though is the fact that the silicon detectors are only spectrally responsive in a narrow part of the solar spectrum. Therefore, to determine broadband solar irradiance a calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under standard conditions but then used for various scenarios including varying air-mass, panel orientation and atmospheric conditions. This would not have been an issue if all wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately the scattering and absorption signature varies widely across wavelengths and the calibration factor computed under certain test conditions is not appropriate for other conditions. This paper lays out the issues that will arise from the use of silicon detectors for PV performance measurement in the field. We also present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  1. Double-layer electrode based on TiO2 nanotubes arrays for enhancing photovoltaic properties in dye-sensitized solar cells.

    PubMed

    He, Zuoli; Que, Wenxiu; Sun, Peng; Ren, Jiangbo

    2013-12-26

    The present work reports a rapid and facile method to fabricate a novel double-layer TiO2 photoanode, which is based on highly ordered TiO2 nanotube arrays and monodispersive scattering microspheres. This double-layer TiO2 sphere/TNTA photoanode have got many unique structural and optical properties from TiO2 scattering microspheres, such as high specific surface area, multiple interparticle scattering, and efficient light-harvesting. Results indicate that this as-fabricated double-layer TiO2 sphere/TNTA front-illumination dye-sensitized solar cell, which is fabricated from the TiO2 nanotube arrays with a 17.4 μm length after TiCl4 treatment, exhibits a pronounced power conversion efficiency of 7.24% under an AM1.5 G irradiation, which can be attributed to the increased incident photon-to-current conversion and light-harvesting efficiency.

  2. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

    PubMed Central

    Nikitskiy, Ivan; Goossens, Stijn; Kufer, Dominik; Lasanta, Tania; Navickaite, Gabriele; Koppens, Frank H. L.; Konstantatos, Gerasimos

    2016-01-01

    The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. PMID:27311710

  3. Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes

    SciTech Connect

    Verhovtseva, A. V. Gergel, V. A.

    2009-07-15

    Mathematical modeling methods were used to study the dynamics of micro-breakdown development in structures of silicon avalanche photodiodes. The constructed model considers the locality of the avalanchexs multiplication region appearing during single photon absorption and the delay of the avalanchexs current spreading over the rear electrode of the diode. The calculations showed two different phases of transient process of the formation of the electrical signal, i.e., the rapid and slow ones due to current spreading and ordinary RC recharge, respectively. The load resistances required to implement the pulsed mode of operation of the structures of the avalanche photodiode were calculated for a series of actual diode capacitances and spreading resistances of the rear electrode.

  4. A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process

    NASA Astrophysics Data System (ADS)

    Zou, Wanghui; Xia, Yu; Chen, Diping; Zeng, Yun

    2017-03-01

    This paper reports a lateral PIN polysilicon photodiode on standard bulk complementary metal-oxidesemiconductor (CMOS) process for monolithically integrated high-speed optoelectronic integrated circuits (OEIC). A nominal undoped polysilicon as the photodetection area is intentionally created without introducing any process modification. With the device area of 50 × 50 μm2, a measured responsivity of 46 mA/W and a quantum efficiency of 11% were observed under the reverse voltage of 10 V and the wavelength of 520 nm. A compact equivalent circuit model for the proposed lateral photodiode is built to analyze the frequency response, and a bandwidth of over 20 GHz was obtained from the measured data, which is to the best of our knowledge the largest bandwidth ever reported based on standard bulk CMOS process.

  5. A low-noise large dynamic-range readout suitable for laser spectroscopy with photodiodes

    NASA Astrophysics Data System (ADS)

    Pullia, A.; Sanvito, T.; Potenza, M. A.; Zocca, F.

    2012-10-01

    An original low-noise large dynamic-range readout system for optical light spectroscopy with PIN diodes is presented. The front-end circuit is equipped with a smart device for automatic cancellation of the large dc offset brought about by the photodiode current. This device sinks away the exact amount of dc current from the preamplifier input, yielding auto zeroing of the output-voltage offset, while introducing the minimum electronic noise possible. As a result the measurement dynamic-range is maximized. Moreover, an auxiliary inspection point is provided which precisely tracks the dc component of the photodiode current. This output allows for precise beam alignment and may also be used for diagnostic purposes. The excellent gain stability and linearity make the circuit perfectly suited for optical-light pulse spectroscopy. Applications include particle sizing in the 100 nm range, two-dimensional characterization of semiconductor detectors, ultra-precise characterization of laser beam stability, confocal microscopy.

  6. A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

    NASA Astrophysics Data System (ADS)

    Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

    2016-05-01

    A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

  7. High Performance Photodiode Based on p-Si/Copper Phthalocyanine Heterojunction.

    PubMed

    Zhong, Junkang; Peng, Yingquan; Zheng, Tingcai; Lv, Wenli; Ren, Qiang; Fobao, Huang; Ying, Wang; Chen, Zhen; Tang, Ying

    2016-06-01

    Hybrid organic-inorganic (HOI) photodiodes have both advantages of organic and inorganic materials, including compatibility of traditional Si-based semiconductor technology, low cost, high photosensitivity and high reliability, showing tremendous value in application. Red light sensitive HOI photodiodes based on the p-Si/copper phthalocyanine (CuPc) hetrojunction were fabricated and characterized. The effects of CuPc layer thickness on the performance were investigated, and an optimal layer thickness of around 30 nm was determined. An analytical expression is derived to describe the measured thickness dependence of the saturation photocurrent. For the device with optimal CuPc layer thickness, a photoresponsivity of 0.35 A/W and external quantum efficiency of 70% were obtained at 9 V reverse voltage bias and 655 nm light illumination of 0.451 mW. Furthermore, optical power dependent performances were investigated.

  8. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    NASA Astrophysics Data System (ADS)

    Chaghi, R.; Cervera, C.; Aït-Kaci, H.; Grech, P.; Rodriguez, J. B.; Christol, P.

    2009-06-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R0A above 4 × 105 Ω cm2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

  9. Cooled photodiodes based on a type-II single p-InAsSbP/ n-InAs heterostructure

    NASA Astrophysics Data System (ADS)

    Il'inskaya, N. D.; Karandashev, S. A.; Latnikova, N. M.; Lavrov, A. A.; Matveev, B. A.; Petrov, A. S.; Remennyi, M. A.; Sevost'yanov, E. N.; Stus', N. M.

    2013-09-01

    Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/ n-InAs heterostructure formed on a heavily doped n +-InAs substrate ( n + ˜ 1018 cm-3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

  10. Design of solid state neutral particle analyzer array for National Spherical Torus Experiment-Upgrade

    SciTech Connect

    Liu, D. Heidbrink, W. W.; Zhu, Y. B.; Tritz, K.; Roquemore, A. L.; Medley, S. S.

    2014-11-15

    A new compact, multi-channel Solid State Neutral Particle Analyzer (SSNPA) diagnostic based on silicon photodiode array has been designed and is being fabricated for the National Spherical Torus Experiment-Upgrade (NSTX-U). The SSNPA system utilizes a set of vertically stacked photodiode arrays in current mode viewing the same plasma region with different filter thickness to obtain fast temporal resolution (∼120 kHz bandwidth) and coarse energy information in three bands of >25 keV, >45 keV, and >65 keV. The SSNPA system consists of 15 radial sightlines that intersect existing on-axis neutral beams at major radii between 90 and 130 cm, 15 tangential sightlines that intersect new off-axis neutral beams at major radii between 120 and 145 cm. These two subsystems aim at separating the response of passing and trapped fast ions. In addition, one photodiode array whose viewing area does not intersect any neutral beams is used to monitor passive signals produced by fast ions that charge exchange with background neutrals.

  11. Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics

    NASA Astrophysics Data System (ADS)

    Kontrosh, E. V.; Lebedeva, N. M.; Kalinovskiy, V. S.; Soldatenkov, F. Yu; Ulin, V. P.

    2016-11-01

    Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.

  12. High sensitivity InAs photodiodes for mid-infrared detection

    NASA Astrophysics Data System (ADS)

    Ng, Jo Shien; Zhou, Xinxin; Auckloo, Akeel; White, Benjamin; Zhang, Shiyong; Krysa, Andrey; David, John P. R.; Tan, Chee Hing

    2016-10-01

    Sensitive detection of mid-infrared light (2 to 5 μm wavelengths) is crucial to a wide range of applications. Many of the applications require high-sensitivity photodiodes, or even avalanche photodiodes (APDs), with the latter generally accepted as more desirable to provide higher sensitivity when the optical signal is very weak. Using the semiconductor InAs, whose bandgap is 0.35 eV at room temperature (corresponding to a cut-off wavelength of 3.5 μm), Sheffield has developed high-sensitivity APDs for mid-infrared detection for one such application, satellite-based greenhouse gases monitoring at 2.0 μm wavelength. With responsivity of 1.36 A/W at unity gain at 2.0 μm wavelength (84 % quantum efficiency), increasing to 13.6 A/W (avalanche gain of 10) at -10V, our InAs APDs meet most of the key requirements from the greenhouse gas monitoring application, when cooled to 180 K. In the past few years, efforts were also made to develop planar InAs APDs, which are expected to offer greater robustness and manufacturability than mesa APDs previously employed. Planar InAs photodiodes are reported with reasonable responsivity (0.45 A/W for 1550 nm wavelength) and planar InAs APDs exhibited avalanche gain as high as 330 at 200 K. These developments indicate that InAs photodiodes and APDs are maturing, gradually realising their potential indicated by early demonstrations which were first reported nearly a decade ago.

  13. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

    2015-08-01

    InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

  14. Feasibility study of an avalanche photodiode readout for a high resolution PET with nsec time resolution

    SciTech Connect

    Schmelz, C.; Ziegler, S.; Bradbury, S.M.; Holl, I.; Lorenz, E.; Renker, D.

    1995-08-01

    A feasibility study for a high resolution positron emission tomograph, based on 9.5 x 4 x 4 mm{sup 3} LSO crystals viewed by 3 mm diameter avalanche photodiodes, has been carried out. Using a Na{sup 22} source the authors determined a spatial resolution of 2.3 {+-} 0.1 mm, an energy resolution around 15 % and a time resolution of 2.6 nsec. Possible configurations for larger scale tests and a tomograph are given.

  15. Microlens arrays

    NASA Astrophysics Data System (ADS)

    Hutley, Michael C.; Stevens, Richard F.; Daly, Daniel J.

    1992-04-01

    Microlenses have been with us for a long time as indeed the very word lens reminds us. Many early lenses,including those made by Hooke and Leeuwenhoek in the 17th century were small and resembled lentils. Many languages use the same word for both (French tilentillelt and German "Linse") and the connection is only obscure in English because we use the French word for the vegetable and the German for the optic. Many of the applications for arrays of inicrolenses are also well established. Lippmann's work on integral photography at the turn of the century required lens arrays and stimulated an interest that is very much alive today. At one stage, lens arrays played an important part in high speed photography and various schemes have been put forward to take advantage of the compact imaging properties of combinations of lens arrays. The fact that many of these ingenious schemes have not been developed to their full potential has to a large degree been due to the absence of lens arrays of a suitable quality and cost.

  16. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    PubMed

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 Vin gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  17. The research of multi-alkali vacuum photodiode on heating and illuminating

    NASA Astrophysics Data System (ADS)

    Fu, Rongguo; Yang, Liu; Wang, Guiyuan; Wei, Yifang; Wang, Kun

    2016-10-01

    A novel concept for solar cell technology, photon-enhanced thermionic emission (PETE), was proposed for harvesting photonic and thermionic energy simultaneously. Researches show that the conversion efficiency of PETE is pretty high, calculated efficiencies for idealized devices can be above 50%, which is exceed the theoretical limits of single-junction photovoltaic cells. To explore whether the vacuum device can exhibit good performance under the conditions that combines illumination and heating, a multi-alkali vacuum photodiode is used as a quantum and thermal energy converter. The band gap of multi-alkali cathode is 1.1eV and the multi-alkali photocathode is employed at temperature below 350K.The current-voltage characteristic curve is measured under two different temperature conditions, so is the power-voltage curve. And the conversion efficiency of the multi-alkali vacuum photodiode is also calculated on the basis of experiment data. The experiment results show that the power converted by a heated and illuminated condition is greater than that obtained under illumination at room temperature or heating without illumination. The conversion efficiency of the multi-alkali vacuum photodiode is higher than that not be heated. This paper shows that the multi-alkali vacuum device presents better performance under the combined conditions. Although the power production and conversion efficiency are not very high in this research, the experiment demonstrates how the two forms of quantum and thermal of solar energy can be simultaneously utilized.

  18. Pacific Array

    NASA Astrophysics Data System (ADS)

    Kawakatsu, H.; Takeo, A.; Isse, T.; Nishida, K.; Shiobara, H.; Suetsugu, D.

    2014-12-01

    Based on our recent results on broadband ocean bottom seismometry, we propose a next generation large-scale array experiment in the ocean. Recent advances in ocean bottom broadband seismometry (e.g., Suetsugu & Shiobara, 2014, Annual Review EPS), together with advances in the seismic analysis methodology, have now enabled us to resolve the regional 1-D structure of the entire lithosphere/asthenosphere system, including seismic anisotropy (both radial and azimuthal), with deployments of ~10-15 broadband ocean bottom seismometers (BBOBSs) (namely "ocean-bottom broadband dispersion survey"; Takeo et al., 2013, JGR; Kawakatsu et al., 2013, AGU; Takeo, 2014, Ph.D. Thesis; Takeo et al., 2014, JpGU). Having ~15 BBOBSs as an array unit for 2-year deployment, and repeating such deployments in a leap-frog way (an array of arrays) for a decade or so would enable us to cover a large portion of the Pacific basin. Such efforts, not only by giving regional constraints on the 1-D structure, but also by sharing waveform data for global scale waveform tomography, would drastically increase our knowledge of how plate tectonics works on this planet, as well as how it worked for the past 150 million years. International collaborations might be sought.

  19. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  20. Mars Array Technology Experiment Developed to Test Solar Arrays on Mars

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    2001-01-01

    Solar arrays will be the power supply for future missions to the planet Mars, including landers, rovers, and eventually human missions to explore the Martian surface. Until Mars Pathfinder landed in July 1997, no solar array had been used on the surface. The MATE package is intended to measure the solar energy reaching the surface, characterize the Martian environment to gather the baseline information required for designing power systems for long-duration missions, and to quantify the performance and degradation of advanced solar cells on the Martian surface. To measure the properties of sunlight reaching the Martian surface, MATE incorporates two radiometers and a visible/NIR spectrometer. The radiometers consist of multiple thermocouple junctions using thin-film technology. These devices generate a voltage proportional to the solar intensity. One radiometer measures the global broadband solar intensity, including both the direct and scattered sunlight, with a field of view of approximately 130. The second radiometer incorporates a slit to measure the direct (unscattered) intensity radiation. The direct radiometer can only be read once per day, with the Sun passing over the slit. The spectrometer measures the global solar spectrum with two 256-element photodiode arrays, one Si sensitive in the visible range (300 to 1100 nm), and a second InGaAs sensitive to the near infrared (900 to 1700 nm). This range covers 86 percent of the total energy from the Sun, with approximately 5-nm resolution. Each photodiode array has its own fiber-optic feed and grating. Although the purpose of the MATE is to gather data useful in designing solar arrays for Mars surface power systems, the radiometer and spectrometer measurements are expected to also provide important scientific data for characterizing the properties of suspended atmospheric dust. In addition to measuring the solar environment of Mars, MATE will measure the performance of five different individual solar cell types

  1. Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.

    PubMed

    Gassenq, Alban; Hattasan, Nannicha; Cerutti, Laurent; Rodriguez, Jean Batiste; Tournié, Eric; Roelkens, Gunther

    2012-05-21

    In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.

  2. Simultaneous determination of nitrated and oligomerized proteins by size exclusion high-performance liquid chromatography coupled to photodiode array detection.

    PubMed

    Liu, Fobang; Reinmuth-Selzle, Kathrin; Lai, Senchao; Weller, Michael G; Pöschl, Ulrich; Kampf, Christopher J

    2017-03-10

    Chemical modifications such as nitration and cross-linking may enhance the allergenic potential of proteins. The kinetics and mechanisms of the underlying chemical processes, however, are not yet well understood. Here, we present a size-exclusion chromatography/spectrophotometry method (SEC-HPLC-DAD) that allows a simultaneous detection of mono-, di-, tri-, and higher protein oligomers, as well as their individual nitration degrees (NDs). The ND results of proteins from this new method agree well with the results from an alternative well-established method, for the analysis of tetranitromethane (TNM)- and nitrogen dioxide and ozone (NO2/O3)-nitrated protein samples. Importantly, the NDs for individual oligomer fractions can be obtained from the new method, and also, we provide a proof of principle for the calculation of the concentrations for individual protein oligomer fractions by their determined NDs, which will facilitate the investigation of the kinetics and mechanism for protein tyrosine nitration and cross-linking.

  3. Quantification of patulin in fruit leathers by ultra-high-performance liquid chromatography-photodiode array (UPLC-PDA)

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Patulin is a mycotoxin commonly found in certain fruit and fruit products. For this reason many countries have established regulatory limits pertaining to, in particular, apple juice and apple products. Fruit leathers are produced by dehydrating fruit puree, leaving a sweet product that has a leathe...

  4. Identification of "insoluble" red dyewoods by high performance liquid chromatography-photodiode array detection (HPLC-PDA) fingerprinting.

    PubMed

    Surowiec, Izabella; Nowik, Witold; Trojanowicz, Marek

    2004-02-01

    The paper describes a high performance liquid chromatography-UV/Vis spectrometry detection analytical approach to the identification of some redwood species of historical importance in textile dyeing. The group of extracted dyestuffs considered as "insoluble" because of their non-aqueous or alkaline extraction conditions is present in the wood of the Pterocarpus family and Baphia nitida species. First, the crude extracts of tinctorial and related species and their chromatographic fingerprints were studied. This part of work shows that some species not yet mentioned in the literature have potential dyeing properties. Subsequent experiments performed on the redwood cargo of a 200-year-old archaeological shipwreck allowed identification of the water-logged wood species. Furthermore, the different methods of dyestuff extraction used for dyeing according to traditional recipes and their impact on analytical results were studied. They show that standard recovery obtained by acid hydrolysis of dyestuff from dyed yarns is inadequate. Hence, alternative solvent-based procedures were proposed. The identification of species in textile threads then becomes possible. The applied approach was validated by analysis of dyed reference yarns with some indications of crude material extraction mode. The employed method of analysis seems to be useful for "insoluble" wood species identification in cultural heritage artifacts as well as for phytochemical purposes, despite the fact that very few detected color compounds were chemically identified.

  5. Detection of charged particles and X-rays by scintillator layers coupled to amorphous silicon photodiode arrays

    SciTech Connect

    Jing, T.; Drewery, J.; Hong, W.S.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.; Goodman, C.A.; Wildermuth, D.

    1995-04-01

    Hydrogenated amorphous silicon (a-Si:H) p-i-n diodes with transparent metallic contacts are shown to be suitable for detecting charged particles, electrons, and X-rays. When coupled to a suitable scintillator using CsI(Tl) as the scintillator we show a capability to detect minimum ionizing particles with S/N {approximately}20. We demonstrate such an arrangement by operating a p-i-n diode in photovoltaic mode (reverse bias). Moreover, we show that a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3-8 higher light sensitivity for shaping times of 1 {mu}s. n-i-n devices have similar optical gain as the p-i-n photoconductor for short integrating times ( < 10{mu}s). However, n-i-n devices exhibit much higher gain for a long term integration (10ms) than the p-i-n ones. High sensitivity photosensors are very desirable for X-ray medical imaging because radiation exposure dose can be reduced significantly. The scintillator CsI layers we made have higher spatial resolution than the Kodak commercial scintillator screens due to their internal columnar structure which can collimate the scintillation light. Evaporated CsI layers are shown to be more resistant to radiation damage than the crystalline bulk CsI(Tl).

  6. Installation of soft X-ray array diagnostics and its application to tomography reconstruction using synthetic KSTAR X-ray images

    SciTech Connect

    Lee, Seung Hun; Jang, Juhyeok; Hong, Joohwan; Jang, Siwon; Choe, Wonho; Pacella, D.; Romano, A.; Gabellieri, L.; Kim, Junghee

    2014-11-15

    Four-array system of soft X-ray diagnostics was installed on KSTAR tokamak. Each array has 32 viewing chords of two photo-diode array detectors with spatial resolution of 2 cm. To estimate signals from the soft X-ray radiation power, typical n{sub e}, T{sub e}, and argon impurity line radiation profiles in KSTAR are chosen. The photo-diodes were absolutely calibrated as a function of the incident photon energy in 2–40 keV range with a portable X-ray tube. Two-dimensional T{sub e} image properties by multi-energy method were simulated and visualized with six combinations of beryllium filter sets within the dynamic range of signal ratio.

  7. Extremely Efficient Multiple Electron-hole Pair Generation in Carbon Nanotube Photodiodes

    NASA Astrophysics Data System (ADS)

    Gabor, Nathaniel

    2010-03-01

    The efficient generation of multiple electron-hole (e-h) pairs from a single photon could improve the efficiency of photovoltaic solar cells beyond standard thermodynamic limits [1] and has been the focus of much recent work in semiconductor nanomaterials [2,3]. In single walled carbon nanotubes (SWNTs), the small Fermi velocity and low dielectric constant suggests that electron-electron interactions are very strong and that high-energy carriers should efficiently generate e-h pairs. Here, I will discuss observations of highly efficient generation of e-h pairs due to impact excitation in SWNT p-n junction photodiodes [4]. To investigate optoelectronic transport properties of individual SWNT photodiodes, we focus a laser beam over the device while monitoring the electronic characteristics. Optical excitation into the second electronic subband E22 ˜ 2 EGAP leads to striking photocurrent steps in the device I-VSD characteristics that occur at voltage intervals of the band gap energy EGAP/ e. Spatially and spectrally resolved photocurrent combined with temperature-dependent studies suggest that these steps result from efficient generation of multiple e-h pairs from a single hot E22 carrier. We conclude that in the SWNT photodiode, a single photon with energy greater than 2EGAP is converted into multiple e-h pairs, leading to enhanced photocurrent and increased photo-conversion efficiency. [1] W. Shockley, and H. J. Queisser, Journal of Applied Physics 32, 510 (1961). [2] R. D. Schaller, and V. I. Klimov, Physical Review Letters 92 (18), 186601 (2004). [3] R. J. Ellingson, et al, Nano Letters, 5 (5), 865-871 (2005). [4] Nathaniel M. Gabor, Zhaohui Zhong, Ken Bosnick, Jiwoong Park, and Paul McEuen, Science, 325, 1367 (2009).

  8. New integration concept of PIN photodiodes in 0.35μm CMOS technologies

    NASA Astrophysics Data System (ADS)

    Jonak-Auer, I.; Teva, J.; Park, J. M.; Jessenig, S.; Rohrbacher, M.; Wachmann, E.

    2012-06-01

    We report on a new and very cost effective way to integrate PIN photo detectors into a standard CMOS process. Starting with lowly p-doped (intrinsic) EPI we need just one additional mask and ion implantation in order to provide doping concentrations very similar to standard CMOS substrates to areas outside the photoactive regions. Thus full functionality of the standard CMOS logic can be guaranteed while the photo detectors highly benefit from the low doping concentrations of the intrinsic EPI. The major advantage of this integration concept is that complete modularity of the CMOS process remains untouched by the implementation of PIN photodiodes. Functionality of the implanted region as host of logic components was confirmed by electrical measurements of relevant standard transistor as well as ESD protection devices. We also succeeded in establishing an EPI deposition process in austriamicrosystems 200mm wafer fabrication which guarantees the formation of very lowly p-doped intrinsic layers, which major semiconductor vendors could not provide. With our EPI deposition process we acquire doping levels as low as 1•1012/cm3. In order to maintain those doping levels during CMOS processing we employed special surface protection techniques. After complete CMOS processing doping concentrations were about 4•1013/cm3 at the EPI surface while the bulk EPI kept its original low doping concentrations. Photodiode parameters could further be improved by bottom antireflective coatings and a special implant to reduce dark currents. For 100×100μm2 photodiodes in 20μm thick intrinsic EPI on highly p-doped substrates we achieved responsivities of 0.57A/W at λ=675nm, capacitances of 0.066pF and dark currents of 0.8pA at 2V reverse voltage.

  9. Conceptual design and applications of HgCdTe infrared photodiodes for heterodyne systems

    NASA Technical Reports Server (NTRS)

    Sirieix, M. B.; Hofheimer, H.

    1980-01-01

    The significance of HgCdTe photodiodes are discussed relative to their existance in heterodyne detection systems operating in the 9 to 11 micrometer CO2 laser wavelength region. Their successful fabrication as well as the physical properties of the materials are described. The implementation of controlled industrial processes are reported with emphasis on the yield of predictable and repeatable detector characteristics to the discriminating systems, demands for high cutoff frequencies, quantum efficiency, and reliability. The most salient production steps and diode characteristics are presented. Measured results from production units are also given.

  10. Time-gating scheme based on a photodiode for single-photon counting

    PubMed Central

    Kumavor, Patrick D.; Tavakoli, Behnoosh; Donkor, Eric; Zhu, Quing

    2012-01-01

    A fast, simple, and low-cost optical time-gating scheme for counting single photons is presented. Its construction consists of a silicon photodiode connected in series with a 50 Ω resistor and that operates in the photoconductive mode. The temporal resolution at the FWHM of the photon counting system was measured to be 62 ps. The profile of a single-photon pulse measured with the counting system agreed well with analytical results. The system was also used to successfully resolve a pair of targets with 4 mm separation inside a highly scattering medium by the use of time-gated early-arriving photons. PMID:21725458

  11. Magnetostriction measuring device based on an optical fiber sensor with an annular photodiode.

    PubMed

    de Manuel, V; Del Real, R P; Alonso, J; Guerrero, H

    2007-09-01

    A new simple and sensitive dilatometer to measure magnetostriction of ribbons has been developed, based on an optical fiber sensor using an annular photodiode. The optical fiber is used bidirectionally, both for emission and detection of light, simplifying the access to the ribbon under test. The working principle is based on the measurement by reflection of the longitudinal displacement of the ribbon end. For a Vitroperm amorphous ribbon of 100 mm length, 21 microm thickness, and 8.3 mm width, a displacement of 2.571 microm with a maximum uncertainty of 8 nm has been obtained.

  12. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  13. Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Chen, C.-C.

    1989-01-01

    The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

  14. Design and testing of an active quenching circuit for an avalanche photodiode photon detector

    NASA Technical Reports Server (NTRS)

    Arbel, D.; Schwartz, J. A.

    1991-01-01

    The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

  15. Required energy for a laser radar system incorporating a fiber amplifier or an avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Overbeck, Jay A.; Salisbury, Michael S.; Mark, Martin B.; Watson, Edward A.

    1995-11-01

    The transmitted energy required for an airborne laser radar system to be able to image a target at 20 km is investigated. Because direct detection is being considered, two methods of using an avalanche photodiode (APD) as the detector and (2) using a commercial fiber amplifier as a preamplifier before a photodetector. For this analysis a specified signal-to-noise ratio was used in conjunction with the radar range equation, which includes the effects of atmospheric transmission and turbulence. Theoretical analysis reveals that a system with a fiber amplifier performs nearly the same as a system incorporating an APD.

  16. All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region.

    PubMed

    Garín, M; Fenollosa, R; Alcubilla, R; Shi, L; Marsal, L F; Meseguer, F

    2014-03-10

    Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonator. The long dwell time of resonating photons enhances the photocurrent response, extending it into the infrared region well beyond the absorption edge of bulk silicon. It opens the door for developing solar cells and photodetectors that may harvest infrared light more efficiently than silicon photovoltaic devices that are so far developed.

  17. Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi N.; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

  18. The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

    NASA Technical Reports Server (NTRS)

    Eden, R. C.

    1975-01-01

    The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

  19. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    SciTech Connect

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.

    2013-12-02

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55 μm), and (b) the optical response extends to lower energy regions (1.55–1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  20. Global Arrays

    SciTech Connect

    Krishnamoorthy, Sriram; Daily, Jeffrey A.; Vishnu, Abhinav; Palmer, Bruce J.

    2015-11-01

    Global Arrays (GA) is a distributed-memory programming model that allows for shared-memory-style programming combined with one-sided communication, to create a set of tools that combine high performance with ease-of-use. GA exposes a relatively straightforward programming abstraction, while supporting fully-distributed data structures, locality of reference, and high-performance communication. GA was originally formulated in the early 1990’s to provide a communication layer for the Northwest Chemistry (NWChem) suite of chemistry modeling codes that was being developed concurrently.

  1. A selective Pt-CdS photodiode to monitor erythemal flux.

    PubMed

    Richards, D L; Davies, R E; Boone, J L

    1998-11-01

    The design and potential benefit of a solar ultraviolet (UV) radiometer reporting a maximum instantaneous flux of erythemally weighted heterogeneous energy is considered. The proposed device is electronically peak detecting; the user would ideally 'point and paint' the sun to find a localized maximum. A projected exposure time can be calculated from an instantaneous reading of erythemally weighted flux for a given minimal erythemal dose (MED) specified by the user. This calculation, though not necessarily providing a true exposure time, may be useful and informative in that it serves as a more 'recognizable' measure of erythemal flux and introduces a custom scale for each individual via their MED. Erythemal flux is calculated as the weighted integral sum [symbol: see text]j(lambda,t) epsilon(lambda) d lambda, where j (lambda, t) is the instantaneous angular integrated spectral irradiance accepted by human skin. This instrument proposal uses a single interference filter over a Pt-CdS photodiode; the interference filter is offered as a nominal design transmittance. The simulated response of the selective photodiode has a near-linear relation to the effective irradiance. Test inputs for evaluation purposes and to elucidate a transducer response are constructed from a spline interpolation of the World Radiation Center (WRC) spectrum and classic transmittance models. Our desired erythemal flux is offered in interconvertible UV Indexes (UVIs) as a function of zenith angle and atmosphere, characterized by elevation, ozone path, and turbidity.

  2. Photodiode-based cutting interruption sensor for near-infrared lasers.

    PubMed

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  3. Ultrafast uni-traveling-carrier photodiodes for measurement and sensing systems

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Nagatsuma, Tadao

    2003-07-01

    The uni-traveling-carrier photodiode (UTC-PD) is a newly developed photodiode that utilizes only electrons as the active carriers. This unique feature enables a UTC-PD to achieve excellent high-speed and high-output characteristics simultaneously. Fabricated devices exhibit a record 3-dB bandwidth of 310 GHz, a very-short electrical output pulse of less than 1 ps, high-power millimeter-wave generation at 100 GHz with an output power of over 20 mW, and a sub-millimeter-wave emission at frequencies of up to 800 GHz. The superior capabilities of the UTC-PD for generating wideband millimeter/sub-millimeter waves and very-short electrical pulse signals can innovate various measurement and sensing systems, for instance, millimeter-wave imaging or network analysis. A waveguide-output UTC-PD module with a maximum output power of over 10 mW at 100 GHz is practically important for the photonic-local system in radio telescopes.

  4. High-speed and high-output-power unitraveling-carrier photodiodes

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Nagatsuma, Tadao

    2003-08-01

    The uni-traveling-carrier photodiode (UTC-PD) is a novel photodiode that utilizes only electrons as the active carriers. This unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. A record 3-dB bandwidth of 310 GHz and a millimeter-wave output power of over 20 mW at 100 GHz have already been achieved. The superior capability of the UTC-PD for generating very-large high-bit-rate electrical signals as well as a very-high output power in millimeter/sub-millimeter ranges can innovate various systems, such as broadband optical communications systems, wireless communications systems, and high-frequency measurement systems. Achievements include photoreceivers of up to 80 Gbit/s, DEMUX operations using an integrated optical gate of up to 320 Gbit/s, and a 10-Gbit/s millimeter-wave wireless link at 120 GHz. Also achieved has been high-power millimeter generation of 17 mW at 120 GHz with a waveguide-output UTC-PD module, considered for use in the photonic-local system of radio telescopes.

  5. Interplanetary space weather effects on Lunar Reconnaissance Orbiter avalanche photodiode performance

    NASA Astrophysics Data System (ADS)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-05-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  6. GaN on Silicon Substrate with AlN Buffer Layer for UV Photodiode

    NASA Astrophysics Data System (ADS)

    Chuah, L. S.; Thahab, S. M.; Hassan, Z.

    Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

  7. Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

    DOE PAGES

    Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; ...

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (inputmore » filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.« less

  8. A miniature cesium iodide-photodiode detector for ambulatory monitoring of left ventricular function.

    PubMed

    Millaire, A; Hossein-Foucher, C; Rousseau, J; Bedoui, H; Ducloux, G; Marchandise, X

    1994-05-01

    The physical characteristics of a portable nonimaging scintillation probe system for continuous ambulatory monitoring of the left ventricular function are described. The detector of the equilibrium radionuclide labeled blood pool is a single cesium iodide (CsI) crystal coupled to a silicium photodiode and interfaced to a microcomputer. The spatial properties of this small CsI crystal (1 x 1 x 1 cm3) were evaluated with various single-hole collimators. Linearity was studied in nonattenuating medium. Saturation began at 3000 cps, count loss was 10% at 4000 cps, maximal count rate was 24,000 cps. In attenuating medium, isocount curve of 5% of the maximal count rate was 100 mm deep and 160 mm wide. The most appropriate tested lead collimator to record the global ejection fraction of the left ventricle was a disc-shaped (thickness 5 mm, diameter 41 mm) single-hole (proximal aperture 8 mm, distal aperture 18 mm) collimator. Sensitivity was similar to the sensitivity of a sodium iodide nuclear probe. The detection performance appeared comparable to other available detector systems. Our results indicate that such a CsI-photodiode probe is a promising candidate for left ventricular function monitoring. The application to an ambulatory multicrystal detector system is presented and discussed.

  9. Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures.

    PubMed

    Chen, Mengyu; Shao, Lei; Kershaw, Stephen V; Yu, Hui; Wang, Jianfang; Rogach, Andrey L; Zhao, Ni

    2014-08-26

    The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices.

  10. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes.

    PubMed

    Xu, Yinfan; Zhao, Jiaqi; Shi, Jianyang; Chi, Nan

    2016-08-08

    Exploiting the increasingly wide use of light emitting diodes (LEDs) lighting, in this paper we propose a reversed indoor positioning system (IPS) based on LED visible light communication (VLC) in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS) method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice.

  11. Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode

    NASA Astrophysics Data System (ADS)

    Meslage, J.; Pichard, G.; Fragnon, M.; Royer, M.; Nguyen Duy, M.; Biosrobert, C.; Morvan, D.

    1983-11-01

    The particular Cd0.7 Hg0.3Te band structure:almost equality of band gap and spin orbit splitting, provides good ionization properties to this alloy : a high ionization coefficients ratio is expected. The devices elaboration is made by planar technology. A N+/N/P+ structure is achieved by ions implantation followed by a diffusion process. A diffused guard ring allows to avoid surface and junction edge effects. The I (V) characteristic shows a breakdown voltage (VB) of about 100 V. The dark current at 0.95 VB, amounts 100nA.Photodiodes sensitivity is typiclly of 0.7. A/W when M=1.Multiplication coefficients as high as 40 have been measured, the photoresponse spatial homogeneity in gain mode has been also controlled with a lOμm size spot : no microplasma effect have been observed. Photodetectors sensitivity, measured at 500 MHz, remains identical in avalanche operating mode. Good linearity is obtained when plotting P-N schottky noise versus light intensity No excess noise was observed. The study of the avalanche photodiode noise, synchronous with 1.3. μm DEL emission, at 30 MHz with a 1 MHz bandwith has been carried out in relation to the multiplication factor, and has led to an estimation of the ionization coefficient ratio.

  12. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

    NASA Astrophysics Data System (ADS)

    Barkad, H. A.; Soltani, A.; Mattalah, M.; Gerbedoen, J.-C.; Rousseau, M.; De Jaeger, J.-C.; BenMoussa, A.; Mortet, V.; Haenen, K.; Benbakhti, B.; Moreau, M.; Dupuis, R.; Ougazzaden, A.

    2010-11-01

    Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at -100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (~6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL® software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

  13. Coated photodiode technique for the determination of the optical constants of reactive elements: La and Tb

    NASA Astrophysics Data System (ADS)

    Seely, John F.; Uspenskii, Yurii A.; Kjornrattanawanich, Benjawan; Windt, David L.

    2006-08-01

    A novel technique, utilizing thin films with protective capping layers deposited onto silicon photodiode substrates, has been developed to accurately determine the optical constants of reactive elements such as the rare earths and transition metals. Depositing protected layers on photodiode substrates has three primary advantages over the study of the transmittance of free-standing films and the angle-dependent reflectance of coatings on mirror substrates. First, it is easy to deposit a thin protective capping layer that prevents oxidation or contamination of the underlying reactive layer. Second, very thin layers of materials that have intrinsically low transmittance can be studied. Third, the optical constants are determined from the bulk properties of the protected layer and are not influenced by reflectance from the top surface that can be affected by oxidation or contamination. These and other benefits of this technique will be discussed, and results for La and Tb will be presented. The determined optical constants are significantly different from the CXRO and other tabulated values. The rare earth (lanthanide) elements with atomic numbers 57-71 have 5d or 4f open shells, and this open shell structure results in transmission windows in the extreme ultraviolet wavelength range >45 nm where materials typically have low transmittance. These transmission windows make possible the fabrication of a new class of multilayer interference coatings, based on rare earth elements, with relatively high peak reflectances and narrow reflectance profiles, both important factors for the imaging of solar and laboratory radiation sources with multilayer telescopes.

  14. Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

    NASA Technical Reports Server (NTRS)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-01-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  15. Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes

    NASA Astrophysics Data System (ADS)

    Armin, Ardalan; Jansen-van Vuuren, Ross D.; Kopidakis, Nikos; Burn, Paul L.; Meredith, Paul

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is material-agnostic and applicable to other disordered and polycrystalline semiconductors.

  16. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes

    PubMed Central

    Xu, Yinfan; Zhao, Jiaqi; Shi, Jianyang; Chi, Nan

    2016-01-01

    Exploiting the increasingly wide use of light emitting diodes (LEDs) lighting, in this paper we propose a reversed indoor positioning system (IPS) based on LED visible light communication (VLC) in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS) method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice. PMID:27509504

  17. Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

    SciTech Connect

    Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; Burn, P. L.; Meredith, P.

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.

  18. The performances photodiode and diode of ZnO thin film by atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Orak, İkram

    2016-12-01

    In this study, the photodiode and diode characterizations of Al/n-ZnO/p type Si heterostructure have been investigated with current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. ZnO thin film has been deposited on p type Si by using atomic layer deposition technique. Some photodiode and diode parameters such as open circuit voltage (Voc), short circuit current (Isc), power efficiency(ηP), fill factor (FF), ideality factor (n) and barrier height (Φb) have calculated with I-V and C-V characteristics. Voc and Isc was found to be 0.094 V and 0.24 mA, respectively at 50 mW/cm2. n and Φb have been calculated 0.41 eV and 2.36, respectively. Especially, Negative capacitance has explained in the forward bias regions at room temperature and in dark condition. The C-V characterization of the Al/ZnO/p type Si heterostructure has been investigated under illumination condition. It can be said that the capacitance of device has been affected under illumination condition.

  19. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    SciTech Connect

    Paul, S. F.; Marsala, R.

    2006-10-15

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e{sub Na}=1.2 nV/{radical}Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >{approx}2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise.

  20. Light emitting diode, photodiode-based fluorescence detection system for DNA analysis with microchip electrophoresis.

    PubMed

    Hall, Gordon H; Glerum, D Moira; Backhouse, Christopher J

    2016-02-01

    Electrophoretic separation of fluorescently end-labeled DNA after a PCR serves as a gold standard in genetic diagnostics. Because of their size and cost, instruments for this type of analysis have had limited market uptake, particularly for point-of-care applications. This might be changed through a higher level of system integration and lower instrument costs that can be realized through the use of LEDs for excitation and photodiodes for detection--if they provide sufficient sensitivity. Here, we demonstrate an optimized microchip electrophoresis instrument using polymeric fluidic chips with fluorescence detection of end-labeled DNA with a LOD of 0.15 nM of Alexa Fluor 532. This represents orders of magnitude improvement over previously reported instruments of this type. We demonstrate the system with an electrophoretic separation of two PCR products and their respective primers. We believe that this is the first LED-induced fluorescence microchip electrophoresis system with photodiode-based detection that could be used for standard applications of PCR and electrophoresis.

  1. Light helicity detection in MOS-based spin-photodiodes: An analytical model

    NASA Astrophysics Data System (ADS)

    Cantoni, M.; Rinaldi, C.

    2016-09-01

    In a metal-oxide-semiconductor-based spin-photodiode, the helicity of an incoming light is efficiently converted into an electrical signal by exploiting (i) the helicity dependence of the degree of optical spin orientation for photogenerated carriers in the semiconductor and (ii) the spin-dependent tunneling transmission of the insulating barrier between the semiconductor and a ferromagnetic metal. Here, we propose a theoretical model for predicting the electrical response of the device to a circularly polarized light, by integrating the Fert-Jaffrès framework [A. Fert and H. Jaffrès, Phys. Rev. B 64, 184420 (2001)] with a helicity-dependent photo-generation term. A figure of merit, related to the variation of the electrical response to the switching of the light helicity from right to left, is defined, and its dependence on the constitutive parameters of the device (barrier resistivity and spin selectivity, semiconductor resistivity and spin diffusion length) is shown. Finally, a simple analytical formula for identifying the optimal resistance barrier leading to the maximum efficiency is found and experimentally validated on Fe/MgO/Ge spin-photodiodes.

  2. Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

    NASA Astrophysics Data System (ADS)

    Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

    2016-03-01

    Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

  3. New optical probe approach using mixing effect in planar photodiode for biomedical applications

    NASA Astrophysics Data System (ADS)

    Pereira, Tânia; Vaz, Pedro; Oliveira, Tatiana; Santos, Inês; Leal, Adriana; Almeida, Vânia; Pereira, Helena; Correia, Carlos; Cardoso, João.

    2013-05-01

    The laser diode self-mixing technique is a well-known and powerful interferometric technique that has been used in biomedical applications, namely for the extraction of cardiovascular parameters. However, to construct an optical probe using the self-mixing principle which is able to acquire signals in the human carotid artery, some problems are expected. The laser diode has a small aperture area, which means that, for physiological sensing purposes, it can be considered as a point-like detector. This feature imparts difficulties to quality recording of physiological signals since the number of photons collected and mixed in the cavity of the photodiode is very small. In order to overcome this problem, a new mixing geometry based on an external large area planar photodiode (PD) is used in the probe, enabling a much larger number of photons to be collected, hence improving the quality of the signal. In this work, the possibility to obtain the mixing effect outside the laser cavity using an external photodetector, such as a planar photodiode, is demonstrated. Two test benches were designed, both with of two reflectors. The first one, which reflects the light beam with the same frequency of the original one is fixed, and the second one, is movable, reflecting the Doppler shifted light to the photodetector. The first test bench has a fixed mirror in front of the movable mirror, creating an umbra and penumbra shadow above the movable mirror. To avoid this problem, another test bench was constructed using a wedged beam splitter (WSB) instead of a fixed mirror. This new assembly ensures the separation of a single input beam into multiple copies that undergo successive reflections and refractions. Some light waves are reflected by the planar surface of WSB, while other light beams are transmitted through the WSB, reaching the movable mirror. Also in this case, the movable mirror reflects the light with a Doppler frequency shift, and the PD receives both beams. The two test

  4. Receiver Performance of CO2 and CH4 Lidar with Low Noise HgCdTe Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Sun, X.; Abshire, J. B.

    2012-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing CO2 lidars at 1.57 μm wavelength for the Active Sensing of CO2 Emission over Days, Nights, and Seasons (ASCENDS) mission. One of the major technical challenges is the photodetectors that have to operate in short wave infrared (SWIR) wavelength region and sensitive to received laser pulses of only a few photons. We have been using InGaAs photocathode photomultiplier tubes (PMT) in our airborne simulator of the CO2 lidar that can detect single photon with up to 10% quantum efficiency at <1.6 μm wavelength. However it was difficult to maintain a sufficiently wide signal dynamic range and single photon sensitivity at the same time with the PMTs. There may also be a lifetime limitation with the InGaAs photocathode PMT for a multi-year space mission. We have been developing HgCdTe avalanche photodiode (APD) SWIR detector systems with DRS Technologies, Reconnaissance, Surveillance and Target Acquisition (RSTA) Division as an alternative photodetector for our CO2 lidars. The new HgCdTe APDs have typically a >50% quantum efficiency, including the effect of fill-factor, from 0.9 to 4.5 μm wavelength. DRS RSTA will integrate a low noise read-out integrated circuit (ROIC) with the HgCdTe APD array into a low noise analog SWIR detector with near single photon sensitivity. The new HgCdTe APD SWIR detector assembly is expected to improve the receiver sensitivity of our CO2 lidar by at least a factor of two and provide a sufficient wide signal dynamic range. The new SWIR detector systems can also be used in the CH4 lidars at 1.65 μm wavelength currently being developed at GSFC. The near infrared PMTs have diminishing quantum efficiency as the wavelength exceeds 1.6 μm. InGaAs APDs have a high quantum efficiency but too high an excess noise factor to achieve near quantum limited performance. The new HgCdTe APDs is expected to give a much superior performance than the PMTs and the InGaAs APDs. In this paper, we

  5. Active pixel sensor array with multiresolution readout

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

    1999-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

  6. 480 x 8 hybrid HgCdTe infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Kobayashi, Masako; Wada, Hideo; Okamura, Toshihiro; Kudo, Jun-ichi; Tanikawa, Kunihiro; Hikida, Soichiro; Miyamoto, Yoshihiro; Miyazaki, Shinji; Yoshida, Yukihiro

    2001-10-01

    This paper explains the technologies used for high-performance long linear arrays based on HgCdTe/CMOS hybrid multiplexers with bidirectional Time Delay and Integration (TDI) functions, and it describes the development of the first high-resolution Forward Looking Infrared (FLIR) system with the SXGA format. Long-wavelength Infrared (LWIR) photodiode arrays are fabricated using liquid-phase epitaxially grown HgCdTe on a CdZnTe substrate. Each photodiode array consists of 480x8-element n+/n-on-p diodes formed by B+ implantation. Each photodiode is surrounded by a crosswise drain diode to define the detection area. The diodes with a 10.3-μm cutoff wavelength had a typical zero-bias resistance of 10 MΩ and a shunt resistance of 1 GΩ. Four CMOS Read Out Integrated Circuits (ROICs) were used for bidirectional TDI and multiplex operations where each ROIC summed up and multiplexed eight signals from 120 channels. The ROIC also includes pixel deselection and gain control circuits along with the corresponding memory and writing means. The Infrared Focal Plane Arrays (IRFPAs) had a typical Noise Equivalent Temperature Difference (NETD) of 18 mK after TDI with F/1.55 optics and 10-μs integration. The FLIR system using the 480x8 IRFPA demonstrated a high spatial resolution of 1280 horizontal lines by 960 vertical lines (SXGA format) and NETD of less than 30 mK. The unique algorithm for image enhancement was successfully confirmed to be efficient.

  7. Low-Timing-Jitter Near-Infrared Single-Photon-Sensitive 16-Channel Intensified-Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.; Lu, Wei; Yang, Guangning; Sun, Xiaoli; Sykora, Derek; Jurkovic, Mike; Aebi, Verle; Costello, Ken; Burns, Richard

    2011-01-01

    We developed a 16-channel InGaAsP photocathode intensified-photodiode (IPD) detector with 78 ps (1-sigma) timing-jitter, less than 500 ps FWHM impulse response, greater than 15% quantum efficiency at 1064 nm wavelength with 131 kcps dark counts at 15 C.

  8. Effect of the lithium diffusion into n-type silicon on the spectral response of the Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Keffous, A.; Siad, M.; Belkacem, Y.; Zitouni, M. A.; Benrakaa, N.; Menari, H.; Dahmani, A.; Chergui, W.; Cheriet, A.

    2003-07-01

    Silicon Schottky photodiode is a good candidate for UV-Vis light detection and ideal for high speed applications, where it has many advantages. One of them is the inherent absence of any component associated with minority carrier effects, and it appears to have a good quantum efficiency in the UV-Vis spectral range. In this work, Schottky contact of different gold thickness film was fabricated by thermal evaporation on highly resistive n-type silicon. A thin gold layer (Au) around 10 nm was used to fabricate the Schottky photodiode which has a good optical properties. These results show a good spectral response value of 0.014 and 0.22 A/W at 350 and 550 nm wavelength, respectively. The results were obtained under 0 V reverse bias voltage and without using an anti-reflection coating. A second measure of the spectral response taken after storing the photodiode in air for several days (30 days) shows a decrease of about 20-50% from the initial value. The decrease was due essentially to the diffusion of lithium from the back side to the front side. In addition, to the absence of surface photodiode edge protection.

  9. InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity.

    PubMed

    Um, Doo-Seung; Lee, Youngsu; Lim, Seongdong; Park, Jonghwa; Yen, Wen-Chun; Chueh, Yu-Lun; Kim, Hyung-Jun; Ko, Hyunhyub

    2016-10-05

    Development of broadband photodetectors is of great importance for applications in high-capacity optical communication, night vision, and biomedical imaging systems. While heterostructured photodetectors can expand light detection range, fabrication of heterostructures via epitaxial growth or wafer bonding still faces significant challenges because of problems such as lattice and thermal mismatches. Here, a transfer printing technique is used for the heterogeneous integration of InGaAs nanomembranes on silicon semiconductors and thus the formation of van der Waals heterojunction photodiodes, which can enhance the spectral response and photoresponsivity of Si photodiodes. Transfer-printed InGaAs nanomembrane/Si heterojunction photodiode exhibits a high rectification ratio (7.73 × 10(4) at ±3 V) and low leakage current (7.44 × 10(-5) A/cm(2) at -3 V) in a dark state. In particular, the photodiode shows high photoresponsivities (7.52 and 2.2 A W(-1) at a reverse bias of -3 V and zero bias, respectively) in the broadband spectral range (400-1250 nm) and fast rise-fall response times (13-16 ms), demonstrating broadband and fast photodetection capabilities. The suggested III-V/Si van der Waals heterostructures can be a robust platform for the fabrication of high-performance on-chip photodetectors compatible with Si integrated optical chips.

  10. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

    SciTech Connect

    Blansett, Ethan L.; Geib, Kent Martin; Cich, Michael Joseph; Wrobel, Theodore Frank; Peake, Gregory Merwin; Fleming, Robert M.; Serkland, Darwin Keith; Wrobel, Diana L.

    2008-01-01

    A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

  11. Reset noise suppression in two-dimensional CMOS photodiode pixels through column-based feedback-reset

    NASA Technical Reports Server (NTRS)

    Pain, B.; Cunningham, T. J.; Hancock, B.; Yang, G.; Seshadri, S.; Ortiz, M.

    2002-01-01

    We present new CMOS photodiode imager pixel with ultra-low read noise through on-chip suppression of reset noise via column-based feedback circuitry. The noise reduction is achieved without introducing any image lag, and with insignificant reduction in quantum efficiency and full well.

  12. An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat-panel arrays

    PubMed Central

    Antonuk, Larry E.; Zhao, Qihua; El-Mohri, Youcef; Du, Hong; Wang, Yi; Street, Robert A.; Ho, Jackson; Weisfield, Richard; Yao, William

    2009-01-01

    Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and∕or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 μm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 μm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of ∼80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 μm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous

  13. Temperature-dependent characteristics of near-infrared organic bulk heterojunction photodiodes (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wu, Zhenghui; Yao, Weichuan; Azoulay, Jason D.; Ng, Tse Nga

    2016-09-01

    Photosensors responsive to the short wavelength infrared (SWIR) spectra are used in a variety of applications including environmental monitoring, medical diagnosis and optical communications. However, most organic semiconductors do not absorb in the SWIR region. Here we show novel donor-acceptor polymers with narrow bandgap responsive in the SWIR region, and the polymers are processed into photodiodes with structure of ITO/PEDOT:PSS/Bulk Heterojunction (BHJ)/Al. The performance of devices with different polymer structures are compared through metrics including detectivity, quantum efficiency, response time and rectification ratio, to determine the mechanisms of charge recombination loss in charge transfer states and charge transport process. We also use different solution-processed interfacial functional layers (e.g. ZnO, MoO3, TiO2) as electrode interface structures. The results provide guideline for selecting suitable polymers and design of device structures, to enable high performance SWIR photosensor via scalable solution-processed fabrication.

  14. Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

    NASA Astrophysics Data System (ADS)

    Rommel, Sean L.; Erby, David N.; Gao, Wei; Berger, Paul R.; Zydzik, George J.; Rhodes, W. W.; O'Bryan, H. M.; Sivco, Deborah L.; Cho, Alfred Y.

    1997-04-01

    Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

  15. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    SciTech Connect

    Schmidt, Morten Falco, Aniello; Loch, Marius; Lugli, Paolo; Scarpa, Giuseppe

    2014-10-15

    In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  16. Cramer-Rao lower bound on range error for LADARs with Geiger-mode avalanche photodiodes.

    PubMed

    Johnson, Steven E

    2010-08-20

    The Cramer-Rao lower bound (CRLB) on range error is calculated for laser detection and ranging (LADAR) systems using Geiger-mode avalanche photodiodes (GMAPDs) to detect reflected laser pulses. For the cases considered, the GMAPD range error CRLB is greater than the CRLB for a photon-counting device. It is also shown that the GMAPD range error CRLB is minimized when the mean energy in the received laser pulse is finite. Given typical LADAR system parameters, a Gaussian-envelope received pulse, and a noise detection rate of less than 4 MHz, the GMAPD range error CRLB is minimized when the quantum efficiency times the mean number of received laser pulse photons is between 2.2 and 2.3.

  17. Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors

    NASA Astrophysics Data System (ADS)

    Kolb, Kimberly

    2014-08-01

    Geiger-mode avalanche photodiodes (GM-APDs) use the avalanche mechanism of semiconductors to amplify signals in individual pixels. With proper thresholding, a pixel will be either "on" (avalanching) or "off." This discrete detection scheme eliminates read noise, which makes these devices capable of counting single photons. Using these detectors for imaging applications requires a well-developed and comprehensive expression for the expected signal-to-noise ratio (SNR). This paper derives the expected SNR of a GM-APD detector in gated operation based on gate length, number of samples, signal flux, dark count rate, photon detection efficiency, and afterpulsing probability. To verify the theoretical results, carrier-level Monte Carlo simulation results are compared to the derived equations and found to be in good agreement.

  18. Application of PN and avalanche silicon photodiodes to low-level optical

    NASA Technical Reports Server (NTRS)

    Eppeldauer, G.; Schaefer, A. R.

    1988-01-01

    New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

  19. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    SciTech Connect

    Rusu, Alexandru Rusu, Lucian

    2015-12-07

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  20. Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1995-01-01

    A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

  1. Temporal and spatial multiplexed infrared single-photon counter based on high-speed avalanche photodiode

    PubMed Central

    Chen, Xiuliang; Ding, Chengjie; Pan, Haifeng; Huang, Kun; Laurat, Julien; Wu, Guang; Wu, E

    2017-01-01

    We report on a high-speed temporal and spatial multiplexed single-photon counter with photon-number-resolving capability up to four photons. The infrared detector combines a fiber loop to split, delay and recombine optical pulses and a 200 MHz dual-channel single-photon detector based on InGaAs/InP avalanche photodiode. To fully characterize the photon-number-resolving capability, we perform quantum detector tomography and then reconstruct its positive-operator-valued measure and the associated Wigner functions. The result shows that, despite of the afterpulsing noise and limited system detection efficiency, this temporal and spatial multiplexed single-photon counter can already find applications for large repetition rate quantum information schemes. PMID:28294155

  2. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    NASA Technical Reports Server (NTRS)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  3. Temporal and spatial multiplexed infrared single-photon counter based on high-speed avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Chen, Xiuliang; Ding, Chengjie; Pan, Haifeng; Huang, Kun; Laurat, Julien; Wu, Guang; Wu, E.

    2017-03-01

    We report on a high-speed temporal and spatial multiplexed single-photon counter with photon-number-resolving capability up to four photons. The infrared detector combines a fiber loop to split, delay and recombine optical pulses and a 200 MHz dual-channel single-photon detector based on InGaAs/InP avalanche photodiode. To fully characterize the photon-number-resolving capability, we perform quantum detector tomography and then reconstruct its positive-operator-valued measure and the associated Wigner functions. The result shows that, despite of the afterpulsing noise and limited system detection efficiency, this temporal and spatial multiplexed single-photon counter can already find applications for large repetition rate quantum information schemes.

  4. Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

    NASA Technical Reports Server (NTRS)

    Becher, J.; Kernell, R. L.; Reft, C. S.

    1985-01-01

    PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

  5. Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals

    SciTech Connect

    Korsunska, N. E.; Shulga, E. P.; Stara, T. R. Litvin, P. M.; Bondarenko, V. A.

    2016-01-15

    The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.

  6. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    NASA Astrophysics Data System (ADS)

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  7. Evaluation of a PIN Photodiode Detector in Neutron-Gamma Fields

    NASA Astrophysics Data System (ADS)

    Cárdenas, José Patricio N.; Campos, Letícia L.; Filho, Tufic Madi

    2011-08-01

    Semiconductor detectors are suitable for applications in radiation dosimetry in nuclear research reactors and for radiation protection purposes. The performance of these detectors depends on the quality of their semiconductor. The aim of this work was to evaluate a commercial PIN Photodiode in the neutron-gamma fields of the IEA-R1 nuclear research reactor and from an AmBe neutron source. This semiconductor was studied as a neutron detector using some types of converters to determine a dose-to-counts conversion factor to dose equivalent. The results have shown that this component may be implemented for assessing the neutron spectra in some radiation fields and in dose equivalent in radiation protection routines.

  8. High-resolution mapping of quantum efficiency of silicon photodiode via optical-feedback laser microthermography

    SciTech Connect

    Cemine, Vernon Julius; Blanca, Carlo Mar; Saloma, Caesar

    2006-09-20

    We map the external quantum efficiency (QE) distribution of a silicon photodiode (PD) sample via a thermographic imaging technique based on optical-feedback laser confocal microscopy. An image pair consisting of the confocal reflectance image and the 2D photocurrent map is simultaneously acquired to delineate the following regions of interest on the sample: the substrate, the n-type region, the pn overlay, and the bonding pad. The 2D QE distribution is derived from the photocurrent map to quantify the optical performance of these sites. The thermal integrity of the sample is then evaluated by deriving the rate of change of QE with temperature T at each point on the silicon PD. These gradient maps function not only as stringent measures of local thermal QE activity but they also expose probable defect locations on the sample at high spatial resolution - a capability that is not feasible with existing bulk measurement techniques.

  9. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    SciTech Connect

    Čermák, Jan Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  10. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes.

    PubMed

    Farrell, Alan C; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M; Huffaker, Diana L

    2015-12-02

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  11. Absolute spectral response measurements of different photodiodes useful for applications in the UV spectral region

    NASA Astrophysics Data System (ADS)

    Pelizzo, Maria G.; Ceccherini, Paolo; Garoli, Denis; Masut, Pietro; Nicolosi, Piergiorgio

    2004-09-01

    Long UV radiation exposure can result in damages of biological tissues, as burns, skin aging, erythema and even melanoma cancer. In the past years an increase of melanoma cancer has been observed and associated to the atmospheric ozone deployment. Attendance of sun tanning unit centers has become a huge social phenomena, and the maximum UV radiation dose that a human being can receive is regulated by law. On the other side, UV radiation is largely used for therapeutic and germicidal purposes. In all these areas, spectroradiometer and radiomenter are needed for monitoring UVA (315-400 nm), UVB (280-315 nm) and UVC (100-280 nm) irradiance. We have selected some commercial photodiodes which can be used as solid state detectors in these instruments. We have characterized them by measuring their absolute spectral response in the 200 - 400 nm spectral range.

  12. Supercontinuum Fourier transform spectrometry with balanced detection on a single photodiode

    DOE PAGES

    Goncharov, Vasily; Hall, Gregory

    2016-08-25

    Here, we have developed phase-sensitive signal detection and processing algorithms for Fourier transform spectrometers fitted with supercontinuum sources for applications requiring ultimate sensitivity. Similar to well-established approach of source noise cancellation through balanced detection of monochromatic light, our method is capable of reducing the relative intensity noise of polychromatic light by 40 dB. Unlike conventional balanced detection, which relies on differential absorption measured with a well matched pair of photo-detectors, our algorithm utilizes phase-sensitive differential detection on a single photodiode and is capable of the real-time correction for instabilities in supercontinuum spectral structure over a broad range of wavelengths. Inmore » the resulting method is universal in terms of applicable wavelengths and compatible with commercial spectrometers. We present a proof-of-principle experimental« less

  13. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    SciTech Connect

    Müller, O. Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  14. InGaAs communication photodiodes: from low to high power level designs

    NASA Astrophysics Data System (ADS)

    Achouche, M.

    2009-01-01

    While InGaAs absorption material has been used for various applications up to 1.6μm wavelength, specific designs for low level detection have become of main interest using high responsivity and low dark current detectors. By adding an avalanche multiplication layer to form an avalanche photodiode (APD) using the Separated Absorption and Multiplication (SAM) structure, one can take advantage of the very low noise properties of multiplication process in large bandgap Al(Ga)(In)As material to improve receiver sensitivity by >10dB. Under high power level injection, specific PIN structures have been developed to improve space charge effects as needed for power applications such as microwave analog photonic links. Specific designs to achieve simultaneously broad bandwidth, high responsivity, very high power saturation and high linearity will be discussed.

  15. Hard disk drive based microsecond X-ray chopper for characterization of ionization chambers and photodiodes.

    PubMed

    Müller, O; Lützenkirchen-Hecht, D; Frahm, R

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  16. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    NASA Astrophysics Data System (ADS)

    Müller, O.; Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  17. Optimization of InGaAs/InAlAs Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Zhang, Zhengyu; Zhu, Min; Xu, Jintong; Li, Xiangyang

    2017-01-01

    In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.

  18. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes

    NASA Astrophysics Data System (ADS)

    Madejczyk, Pawel; Gawron, Waldemar; Martyniuk, Piotr; Keblowski, Artur; Pusz, Wioletta; Pawluczyk, Jaroslaw; Kopytko, Malgorzata; Rutkowski, Jaroslaw; Rogalski, Antoni; Piotrowski, Jozef

    2017-03-01

    The authors report on energy gap engineering solutions to improve the high-temperature performance of long-wave infrared (LWIR) HgCdTe photodiodes. Metalorganic chemical vapour deposition (MOCVD) technology with a wide range of composition and donor/acceptor doping and without ex-situ post grown annealing seems to be an excellent tool for HgCdTe heterostructure epitaxial growth. The heterojunction HgCdTe photovoltaic device based on epitaxial graded gap structures integrated with Auger-suppression is a magnificent solution for high operating temperature (HOT) infrared detectors. The thickness, composition and doping of HgCdTe heterostructure were optimized with respect to photoelectrical parameters like dark current, the responsivity and the response time. In this paper we focus on graded interface abruptness in the progressive optimization.

  19. Reducing the Spikes of Avalanche Photodiode Measurements at the National Spherical Torus Experiment

    NASA Astrophysics Data System (ADS)

    Brubaker, Z. E.; Foley, E. L.

    2011-10-01

    Avalanche Photodiodes (APD) used at the National Spherical Torus Experiment (NSTX) make important measurements for the Motional Stark Effect (MSE) diagnostic. However, they are very sensitive, and if radiation consistently reaches these detectors they are damaged over time. Furthermore, they also display spikes in their readings, which greatly complicates the data analysis for MSE. Due to our Collisionally-Induced Fluorescence Motional Stark Effect diagnostic observing significant radiation despite being shielded by a 3 foot concrete wall, we must devise a plan for shielding our new Laser-Induced Fluorescence Motional Stark Effect diagnostic, as well as determining the best possible location for them. In order to reduce the amount of spikes seen in our readings and to preserve our detectors, I investigated the type of radiation responsible, the locations most affected, and tested various materials for shielding. Results will be presented.

  20. Supercontinuum Fourier transform spectrometry with balanced detection on a single photodiode

    SciTech Connect

    Goncharov, Vasily; Hall, Gregory

    2016-08-25

    Here, we have developed phase-sensitive signal detection and processing algorithms for Fourier transform spectrometers fitted with supercontinuum sources for applications requiring ultimate sensitivity. Similar to well-established approach of source noise cancellation through balanced detection of monochromatic light, our method is capable of reducing the relative intensity noise of polychromatic light by 40 dB. Unlike conventional balanced detection, which relies on differential absorption measured with a well matched pair of photo-detectors, our algorithm utilizes phase-sensitive differential detection on a single photodiode and is capable of the real-time correction for instabilities in supercontinuum spectral structure over a broad range of wavelengths. In the resulting method is universal in terms of applicable wavelengths and compatible with commercial spectrometers. We present a proof-of-principle experimental

  1. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  2. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-12-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  3. High-light-output scintillator for photodiode readout: LuI3:Ce3+

    NASA Astrophysics Data System (ADS)

    Birowosuto, M. D.; Dorenbos, P.; van Eijk, C. W. E.; Krämer, K. W.; Güdel, H. U.

    2006-06-01

    In this paper, we investigated the scintillation properties of LuI3:Ce3+. Radioluminescence, light output, energy resolution, and γ-scintillation decay are reported. We find an extremely high light output of 98 000+/-10 000 photons/MeV. LuI3:Ce3+ also gives a very high electron-hole (e-h) pair response when it is coupled with an avalanche photodiode (APD) (92 000+/-9000 e-h pairs/MeV). With an APD, a best energy resolution (full width at half maximum over the peak position) of 3.3%+/-0.3% for 662 keV γ quanta is observed. A combination of an extremely high light output and a good energy resolution makes LuI3:Ce3+ an ideal scintillator for radiation sensor applications. Some drawbacks due to the hygroscopicity and the difficult growth of LuI3:Ce3+ crystals are also discussed.

  4. Back-illuminated GaN/AlGaN visible-blind photodiodes

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Chen, Jun; Bai, Yun; Guo, Liwei; Zhang, Yan; Li, Xiangyang; Gong, Haimei

    2007-12-01

    In recent years, AlGaN semiconductor alloys, with a direct bandgap tunable between 3.4eV and 6.2eV, become the most suitable material for fabricating UV detectors. In this paper, a backside-illuminated visible-blind UV detector based on a GaN/AlGaN p-i-n heterostructure has been successfully fabricated and tested. The p-i-n photodiode structure consists of a 0.7um n-type Al 0.33Ga 0.67N:Si layer grown by metal-organic chemical vapor deposition (MOCVD) onto a low temperature AlN buffer layer on a polished sapphire substrate. On the top of this layer there is a 0.18um undoped GaN active layer and a 0.15um p-type GaN:Mg top layer. Square mesas of area A=1.70×10 -3cm2 were obtained by inductively coupled plasma etching using BCl 3, Ar and Cl II. Standard photolithographic and metallization procedures were also employed to fabricate the devices. The visible blind photodiode exhibits a narrow UV spectral responsibility band peaked at 360nm, with maximum responsibility R=0.21A/W, corresponding to an internal quantum efficiency of 82%. R 0A values up to 2.64×10 8Ω•cm2 were obtained, corresponding to D*=2.65×10 13 cmHz 1/2W -1 at 360nm. The leakage current at zero bias is 5.20×10 -13A. We also examined GaN/AlGaN epitaxial layers by high resolution X-ray diffraction (HRXRD). The rocking curve indicates the multiple layers including p-type layer are in good state, which indicates that the crystalline quality of films is the key of device performances.

  5. Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

    NASA Astrophysics Data System (ADS)

    Jóźwikowski, Krzysztof; Jóźwikowska, Alina; Martyniuk, Andrzej

    2016-10-01

    The effect of dislocation on the 1/ f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley-Read-Hall (SRH) generation-recombination (G-R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G-R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/ f fluctuations of the G-R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G-R processes and this way cause the growth of G-R dark current. Despite the fact that dislocations increase both shot G-R noise and 1/ f G-R noise, the main cause of 1/ f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/ f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G-R dark current caused by dislocations leads to the growth of noise current.

  6. Improved Photoresponse of Hybrid ZnO/P3HT Bilayered Photodetector Obtained Through Oriented Growth of ZnO Nanorod Arrays and the Use of Hole Injection Layer

    NASA Astrophysics Data System (ADS)

    Bilgaiyan, Anubha; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

    2015-08-01

    We report highly oriented one-dimensional (1-D) growth of zinc oxide (ZnO) nanorod arrays (NRA) which were later utilized to fabricate hybrid photodiodes having the typical photodiode configuration of indium tin oxide (ITO)/ZnO/poly(3-hexylthiophene) (P3HT)/Ag. These functional hybrid bilayered photodiodes were found to have high rectification ratio under dark conditions and demonstrated enhanced responsivity under light illumination. Further, we studied the effect of an intermediate electron blocking layer of poly(ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) on the photodiode characteristics and demonstrated ITO/ZnO/P3HT/PEDOT:PSS/Ag photodiodes, reporting very high rectification ratio and responsivity in this bilayered configuration. The observed results are explained on the basis of the increased surface area of contact between the ZnO nanorods and the P3HT, and also the efficient hole injection into the P3HT layer from the top Ag electrode.

  7. Diode Laser Arrays

    NASA Astrophysics Data System (ADS)

    Botez, Dan; Scifres, Don R.

    2005-11-01

    Contributors; 1. Monolithic phase-locked semiconductor laser arrays D. Botez; 2. High power coherent, semiconductor laser master oscillator power amplifiers and amplifier arrays D. F. Welch and D. G. Mehuys; 3. Microoptical components applied to incoherent and coherent laser arrays J. R. Leger; 4. Modeling of diode laser arrays G. R. Hadley; 5. Dynamics of coherent semiconductor laser arrays H. G. Winfuland and R. K. Defreez; 6. High average power semiconductor laser arrays and laser array packaging with an emphasis for pumping solid state lasers R. Solarz; 7. High power diode laser arrays and their reliability D. R. Scifres and H. H. Kung; 8. Strained layer quantum well heterostructure laser arrays J. J. Coleman; 9. Vertical cavity surface emitting laser arrays C. J. Chang-Hasnain; 10. Individually addressed arrays of diode lasers D. Carlin.

  8. Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

    PubMed

    Shao, Haifeng; Keyvaninia, Shahram; Vanwolleghem, Mathias; Ducournau, Guillaume; Jiang, Xiaoqing; Morthier, Geert; Lampin, Jean-Francois; Roelkens, Gunther

    2014-11-15

    We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

  9. Low dark current LWIR and VLWIR HgCdTe focal plane arrays at AIM

    NASA Astrophysics Data System (ADS)

    Hanna, S.; Eich, D.; Fick, W.; Figgemeier, H.; Mahlein, M.; Schirmacher, W.; Thöt, R.

    2016-10-01

    In this paper AIM presents an update on its results for both n-on-p and p-on-n low dark current planar MCT photodiode technology LWIR and VLWIR two-dimensional focal plane detector arrays with a cut-off wavelength >11μm at 80K and a 640×512 pixel format. The arrays are stitched from two 512×320 pixel photodiode arrays at a 20μm pixel pitch. Thermal dark currents significantly reduced as compared to `Tennant's Rule 07' at a yet good detection efficiency <60% as well as results from NETD and photo response performance characterization are presented over a wide operating temperature range. The improvements made allow for the same dark current performance at a 20K higher operating temperature than with previous AIM technology. The demonstrated detector performance paces the way for a new generation of higher operating temperature low SWaP LWIR MCT FPAs with a <30mK NETD up to a 110K detector operating temperature and with good operability. Alternatively, lower dark currents at common operating temperatures may be attained, enabling cutting edge next generation LWIR/VLWIR detectors for space instruments.

  10. Adaptive optics wavefront sensors based on photon-counting detector arrays

    NASA Astrophysics Data System (ADS)

    Aull, Brian F.; Schuette, Daniel R.; Reich, Robert K.; Johnson, Robert L.

    2010-07-01

    For adaptive optics systems, there is a growing demand for wavefront sensors that operate at higher frame rates and with more pixels while maintaining low readout noise. Lincoln Laboratory has been investigating Geiger-mode avalanche photodiode arrays integrated with CMOS readout circuits as a potential solution. This type of sensor counts photons digitally within the pixel, enabling data to be read out at high rates without the penalty of readout noise. After a brief overview of adaptive optics sensor development at Lincoln Laboratory, we will present the status of silicon Geigermode- APD technology along with future plans to improve performance.

  11. A 4 π charged-particle detector array for light-ion-induced nuclear fragmentation studies

    NASA Astrophysics Data System (ADS)

    Kwiatkowski, K.; Alexander, A.; Bracken, D. S.; Brzychczyk, J.; Dorsett, J.; Ensman, R.; Renshaw Foxford, E.; Hamilton, T.; Komisarcik, K.; McDonald, K. N.; Morley, K. B.; Poehlman, J.; Powell, C.; Viola, V. E.; Yoder, N. R.; Ottarson, J.; Madden, N.

    1994-12-01

    Operating characteristics of the Indiana Silicon Sphere 4 π detector array are outlined. The detector geometry is spherical, with 90 telescopes in the forward hemisphere and 72 at backward angles, covering a total solid angle of 74% of 4π. Each telescope consists of a simple gas-ion chamber, operated with C3F8 gas, followed by a 0.5 mm thick ion-implanted silicon detector and a 28 mm CsI(Tl) crystal, readout by a photodiode. Custom-built bias supplies and NIM preamp/shaper modules were used in conjunction with commercial CFD, TDC and ADC CAMAC units.

  12. Development of the HgCdTe Avalanche Photodiode Detectors and the Improvement in the CO2 Lidar Performance for the ASCENDS Mission

    NASA Astrophysics Data System (ADS)

    Sun, X.; Abshire, J. B.; Chen, J. R.; Ramanathan, A. K.; Mao, J.

    2015-12-01

    NASA Goddard Space Flight Center (GSFC) is developing the CO2 lidar as a candidate for the NASA's planned ASCENDS mission under the support of Earth Science Technology Office (ESTO) IIP and ATI-QRS programs. A new type of HgCdTe avalanche photodiode (APD) detector has been developed by the DRS Technologies under the IIP program. The new detectors achieved >70% quantum efficiency, including the effect of the fill factor, over the spectral range from 0.4 to 4.3 μm, which significantly improves the receiver performance of our CO2 lidar and enabled other remote sending measurements. The HgCdTe APD arrays have 80 μm square pixels in a 4x4 array along with a bank of 16 preamplifiers on the same chip carrier. Test results at both DRS and GSFC showed the HgCdTe APD array has achieved, an APD gain of 500-1000, 8-10 MHz electrical bandwidth, and an average noise equivalent power (NEP) of <0.5 fW/Hz1/2. It has demonstrated at least a 3 orders of magnitude dynamic range at a fixed APD gain setting. The gains of the APD and the preamplifier can also be adjusted to further extend the receiver dynamic range. During summer 2014 we successfully demonstrated airborne lidar measurements of column CO2 using one of these detectors. The Aerospace Corporation is currently building a 3U CubeSat with one of these detectors in a small closed-cycle cryocooler as the primary payload under the ESTO In-space Validation of Earth Science Technology (InVEST) program. The CubeSat is scheduled to be launched in late 2016 and will fly in a low Earth orbit and monitor the performance for at least a year. We have also updated the performance analysis of a space-based version of our CO2 lidar with the new HgCdTe APD detector. For the retrievals, a least-square-error method is used to fit the measured transmittances to a predetermined line shape function using 8 to 16 sampling wavelengths. The error in the derived total optical depth and the CO2 mixing ratio are estimated via the standard error

  13. III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ghosh, Sid

    2015-08-01

    photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.

  14. Dark-current characteristics of GaN-based UV avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Xu, Jintong; Chang, Chao; Li, Xiangyang

    2015-04-01

    For UV detecting, it needs high ratio of signal to noise, which means high responsibility and low noise. GaN-based avalanche photodiodes can provide a high internal photocurrent gain. In this paper, we report the testing and characterization of GaN based thin film materials, optimization design of device structure, the device etching and passivation technology, and the photoelectric characteristics of the devices. Also, uniformity of the device was obtained. The relationship between dark current and material quality or device processes was the focus of this study. GaN based material with high aluminum components have high density defects. Scanning electron microscope, cathodoluminescence spectra, X-ray double crystal diffraction and transmission spectroscopy testing were employed to evaluate the quality of GaN-based material. It shows that patterned sapphire substrate or thick AlN buffer layer is more effective to get high quality materials. GaN-based materials have larger hole ionization coefficient, so back incident structure were adopted to maximize the hole-derived multiplication course and it was helped to get a smaller multiplication noise. The device with separate absorption and multiplication regions is also prospective to reduce the avalanche noise. According to AlGaN based material characteristics and actual device fabrication, device structure was optimized further. Low physical damage inductively coupled plasma (ICP) etching method was used to etch mesa and wet etching method was employed to treat mesa damage. Silica is passivation material of device mesa. For solar-blind ultraviolet device, it is necessary to adopt a wider bandgap material than AlGaN material. The current-voltage characteristics under reverse bias were measured in darkness and under UV illumination. The distribution of dark current and response of different devices was obtained. In short, for GaN-based UV avalanche photodiode, dark current was related to high density dislocation of

  15. Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Lorenz, Michael; Grundmann, Marius

    2016-03-01

    UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1-x)2O3 thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.

  16. Manufactures and Characterizations of Photodiode Thin Film Barium Strontium Titanate (BST) Doped by Niobium and Iron as Light Sensor

    NASA Astrophysics Data System (ADS)

    Dahrul, Muhammad; Syafutra, Heriyanto; Arif, Ardian; Irzaman, Indro; Nur, Muhammad; Siswadi

    2010-12-01

    Pure Ba0,5Sr0,5TiO3 (BST) thin film, BST doped by niobium (BNST) and BST doped by iron (BFST) have been synthesized on p-type Si (100) substrates using Chemical Solution Deposition (CSD) methods followed by spin coating and annealing techniques. Current-voltage characterizations on these sample result in agreement that all of the BST, BNST, and BFST thin films have photodiode properties. Electrical conductivity values of BST, BNST, and BFST are in the range of conductivity values of semiconductor materials. Niobium or iron doping on the BST samples increase their conductivity value their dielectric constant. This conductivity values may change when a light is exposed on the film surface. Absorbance and reflectance characterizations show that the BST, BNST, and BFST thin films absorb certain range of visible and infrared light. It is convincing that the BST, BNST, and BFST thin films might be used as photodiode light sensor.

  17. Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Grundmann, Marius

    2016-06-01

    We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV.

  18. Plasmonic enhancements of photocatalytic activity of Pt/n-Si/Ag photodiodes using Au/Ag core/shell nanorods.

    PubMed

    Qu, Yongquan; Cheng, Rui; Su, Qiao; Duan, Xiangfeng

    2011-10-26

    We report the plasmonic enhancement of the photocatalytic properties of Pt/n-Si/Ag photodiode photocatalysts using Au/Ag core/shell nanorods. We show that Au/Ag core/shell nanorods can be synthesized with tunable plasmon resonance frequencies and then conjugated onto Pt/n-Si/Ag photodiodes using well-defined chemistry. Photocatalytic studies showed that the conjugation with Au/Ag core/shell nanorods can significantly enhance the photocatalytic activity by more than a factor of 3. Spectral dependence studies further revealed that the photocatalytic enhancement is strongly correlated with the plasmonic absorption spectra of the Au/Ag core/shell nanorods, unambiguously demonstrating the plasmonic enhancement effect.

  19. High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

    SciTech Connect

    He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong; Liu, Yi; Beltjens, Emeline; Qi, Jie

    2015-11-02

    CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.

  20. High-Speed Widely-Tunable 90% Quantum-Efficiency Resonant Cavity Enhanced p-i-n Photodiodes

    DTIC Science & Technology

    1998-12-01

    REPORT unclassified b . ABSTRACT unclassified c. THIS PAGE unclassified Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 8:45am - 9...00am WB2 High-Speed Widely-Tunable >90% Quantum-Efficiency Resonant Cavity Enhanced p-i-n Photodiodes Necmi Biyiklia. Ibrahim Kimukinb. Orhan ...Bilkent, Ankara 06533, Turkey. b Department of Physics, Bilkent University, Bilkent, Ankara 06533, Turkey. c Department of Electrical and Computer

  1. Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

    PubMed

    Pan, Huapu; Li, Zhi; Beling, Andreas; Campbell, Joe C

    2009-10-26

    The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

  2. High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

    NASA Astrophysics Data System (ADS)

    Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

    2004-08-01

    We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

  3. Photodetector Arrays for Multicolor Visible/Infrared Imaging

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Bandara, Sumith; Liu, John; Ting, David

    2006-01-01

    Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

  4. In0.53Ga0.47As p-i-n photodiodes with transparent cadmium tin oxide contacts

    NASA Astrophysics Data System (ADS)

    Berger, Paul R.; Dutta, Niloy K.; Zydzik, George; O'Bryan, H. M.; Keller, Ursula; Smith, Peter R.; Lopata, John; Sivco, D.; Cho, A. Y.

    1992-10-01

    A new type of p-i-n In0.53Ga0.47As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer and a transparent cadmium tin oxide (CTO) layer was investigated. The composite functions as the n or p contact, an optical window, and an antireflection coating. The transparent contact also prevents shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the CTO contact is nonalloyed, interdiffusion into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage currents of ≤8 nA and some as low as 23 pA, with reverse breakdown voltages of ≥15-17 V. Responsivity was measured using a 1.55 μm InGaAsP diode laser focused onto an unpassivated 60 μm diam p-i-n photodiode and was ≥0.41 A/W. Photoresponse of the diodes to 3 ps pulses from a Nd:YLF laser (λ=1.047 μm) was 169 and 86 ps for the 60 and 9 μm diodes, respectively. The maximum frequency response of the 9 μm diode is packaging limited, and is expected to have an intrinsic response time of 20-30 ps.

  5. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    PubMed

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  6. High-speed on-chip windowed centroiding using photodiode-based CMOS imager

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

    2003-01-01

    A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

  7. High-speed on-chip windowed centroiding using photodiode-based CMOS imager

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

    2004-01-01

    A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

  8. Research on photodiode detector-based spatial transient light detection and processing system

    NASA Astrophysics Data System (ADS)

    Liu, Meiying; Wang, Hu; Liu, Yang; Zhao, Hui; Nan, Meng

    2016-10-01

    In order to realize real-time signal identification and processing of spatial transient light, the features and the energy of the captured target light signal are first described and quantitatively calculated. Considering that the transient light signal has random occurrence, a short duration and an evident beginning and ending, a photodiode detector based spatial transient light detection and processing system is proposed and designed in this paper. This system has a large field of view and is used to realize non-imaging energy detection of random, transient and weak point target under complex background of spatial environment. Weak signal extraction under strong background is difficult. In this paper, considering that the background signal changes slowly and the target signal changes quickly, filter is adopted for signal's background subtraction. A variable speed sampling is realized by the way of sampling data points with a gradually increased interval. The two dilemmas that real-time processing of large amount of data and power consumption required by the large amount of data needed to be stored are solved. The test results with self-made simulative signal demonstrate the effectiveness of the design scheme. The practical system could be operated reliably. The detection and processing of the target signal under the strong sunlight background was realized. The results indicate that the system can realize real-time detection of target signal's characteristic waveform and monitor the system working parameters. The prototype design could be used in a variety of engineering applications.

  9. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    NASA Astrophysics Data System (ADS)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  10. High-speed detection at two micrometres with monolithic silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  11. Response of large area avalanche photodiodes to low energy x rays

    SciTech Connect

    Gentile, T. R.; Bales, M.; Arp, U.; Dong, B.; Farrell, R.

    2012-05-15

    For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

  12. Slot clock recovery in optical PPM communication systems with avalanche photodiode photodetectors

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic M.; Sun, Xiaoli

    1989-01-01

    Slot timing recovery in a direct-detection optical PPM communication system can be achieved by processing the photodetector output waveform with a nonlinear device whose output forms the input to a phase-locked loop. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (wavelength = 834 nm) and a silicon avalanche photodiode photodetector. The system used Q = 4 PPM signaling and operated at a source data rate of 25 Mbits/s. The mathematical model developed to compute the rms phase error of the recovered clock is shown to be in good agreement with results of actual measurements of phase errors. The use of the recovered slot clock in the receiver resulted in no significant degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the -6th at a received optical signal energy of 55 detected photons per information bit.

  13. Coordinated observations of optical lightning from space using the FORTE photodiode detector and CCD imager

    NASA Astrophysics Data System (ADS)

    Suszcynsky, D. M.; Light, T. E.; Davis, S.; Green, J. L.; Guillen, J. L. L.; Myre, W.

    2001-08-01

    This paper presents an overview of the coordinated observation of optical lightning from space using the photodiode detector (PDD) and CCD-based imager known as the Lightning Location System (LLS) aboard the Fast On-Orbit Recording of Transient Events (FORTE) satellite. PDD/LLS coincidence statistics are presented and show that both the detected energy density and the detected peak irradiance of optical lightning events are proportional to the number of LLS pixels (pixel multiplicity) which are activated during the event. The inference is that LLS pixel multiplicity is more a function of the detected intensity and horizontal extent of the optical event rather than a direct indicator of the degree of scattering. PDD/LLS event coincidence is also used to improve upon traditional recurrence/clustering algorithms that discriminate against false LLS events due to energetic particles and glint. Energy density measurements of coincident events show that about 4% of the optical energy detected by the broadband PDD appears in the narrowband LLS. This is in general agreement with ground-based measurements and with assumptions incorporated into the design of current and planned CCD-imaging sensors.

  14. Triple transit region photodiodes (TTR-PDs) providing high millimeter wave output power.

    PubMed

    Rymanov, Vitaly; Stöhr, Andreas; Dülme, Sebastian; Tekin, Tolga

    2014-04-07

    We report on a novel triple transit region (TTR) layer structure for 1.55 μm waveguide photodiodes (PDs) providing high output power in the millimeter wave (mmW) regime. Basically, the TTR-PD layer structure consists of three transit layers, in which electrons drift at saturation velocity or even at overshoot velocity. Sufficiently strong electric fields (>3000 V/cm) are achieved in all three transit layers even in the undepleted absorber layer and even at very high optical input power levels. This is achieved by incorporating three 10 nm thick p-doped electric field clamp layers. Numerical simulations using the drift-diffusion model (DDM) indicate that for optical intensities up to ~500 kW/cm(2), no saturation effects occur, i.e. the electric field exceeds the critical electric field in all three transit layers. This fact in conjunction with a high-frequency double-mushroom cross-section of the waveguide TTR-PD ensures high output power levels at mmW frequencies. Fabricated 1.55 µm InGaAs(P)/InP waveguide TTR-PDs exhibit output power levels exceeding 0 dBm (1 mW) and a return loss (RL) up to ~24 dB. Broadband operation with a 3 dB bandwidth beyond 110 GHz is achieved.

  15. Photodiode Based on CdO Thin Films as Electron Transport Layer

    NASA Astrophysics Data System (ADS)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  16. Noise characteristic of AlGaN-based solar-blind UV avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Chang, C.; Xu, J. T.; Li, X. Y.

    2015-04-01

    A particular system for excess noise of avalanche photodiode (APD) measurement was build. Then the signal-noise ratio at different reverse voltage and the noise spectrum are measured and analyzed on different devices. First, the noise measurement system was constructed to fulfill the requirement that a high DC voltage can be applied on, and the measurement system was carefully shielded to protect from disturbance of electromagnetic radiations. Than we measured the noise spectrums of separate absorption and multiplication (SAM) type solar-blind APDs. The noise spectrums of SAM APDs which have different dark current levels were also measured. The results show that the low-frequency noise is dominant across a wide frequency range. And as the dark current goes higher, shot noise and low-frequency noise go higher at the same time. And the low-frequency noise will also takes more proportion in the spectrum when dark current goes higher. On the other hand, noise measurements at different reverse voltage and in either UV illumination or dark show that the excess noise factor increase faster as the gain increase. This leads to a decrease of signal-noise ratio at very high gain. In order to get a higher signal-noise ratio, a proper high gain should be adopted, rather than a gain "higher and better".

  17. Nanosecond response of organic solar cells and photodiodes: Role of trap states

    NASA Astrophysics Data System (ADS)

    Christ, Nico; Kettlitz, Siegfried W.; Züfle, Simon; Valouch, Sebastian; Lemmer, Uli

    2011-05-01

    The nanosecond photoresponse of organic solar cells and photodiodes based on a conjugated polymer [poly(3-hexylthiophene-2,5-diyl) (P3HT)] blended with a fullerene derivative [[6,6]-phenyl C61-butyric acid methyl ester (PCBM)] is found to exhibit a tail in the decay characteristics which is proportional to t-α. Existing numerical drift-diffusion simulations, not including the influence of trap states in the organic materials, fail to describe the observed long tail of the current density decay up to the microsecond timescale. We have extended a numerical drift-diffusion model to account for dispersive transport phenomena. In addition to a Gaussian density of the transport states, the distribution includes an exponential tail of states acting as trap sites for the generated charge carriers. The observed decay of the photoresponse following a power law is excellently reproduced within a multiple-trapping approach taking into account nine trap states approximating the exponential tail. The mobility of carriers in the transport states is found to be three times higher than the average effective mobility.

  18. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  19. Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

    NASA Technical Reports Server (NTRS)

    Parks, Joseph W., Jr.; Brennan, Kevin F.

    1998-01-01

    The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

  20. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    PubMed Central

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-01-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

  1. Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

    SciTech Connect

    Ogawa, H.S.; McMullin, D.; Judge, D.L. ); Canfield, L.R. )

    1990-04-01

    A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme ultraviolet photon flux in the spectral region between 50 and 800 {angstrom}. The detector was flown aboard a solar point sounding rocket launched from White Sands Missile Range in New Mexico on October 24, 1988. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 {times} 10{sup 10} photons cm{sup {minus}2} s{sup {minus}1}. Based on a nominal probable error of 7% for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-{angstrom} region (5% on longer wavelength measurements between 500 and 1216 {angstrom}), and based on experimental errors associated with their rocket instrumentation and analysis, a conservative total error estimate of {approximately}14% is assigned to the absolute integral solar flux obtained.

  2. Initial characterization of a BGO-photodiode detector for high resolution positron emission tomography

    SciTech Connect

    Derenzo, S.E.

    1983-11-01

    Spatial resolution in positron emission tomography is currently limited by the resolution of the detectors. This work presents the initial characterization of a detector design using small bismuth germanate (BGO) crystals individually coupled to silicon photodiodes (SPDs) for crystal identification, and coupled in groups to phototubes (PMTs) for coincidence timing. A 3 mm x 3 mm x 3 mm BGO crystal coupled only to an SPD can achieve a 511 keV photopeak resolution of 8.7% FWHM at -150/sup 0/C, using a pulse peaking time of 10 ..mu..s. When two 3 mm x 3 mm x 15 mm BGO crystals are coupled individually to SPDs and also coupled to a common 14 mm diam PMT, the SPDs detect the 511 keV photopeak with a resolution of 30% FWHM at -76/sup 0/C. In coincidence with an opposing 3 mm wide BGO crystal, the SPDs are able to identify the crystal of interaction with good signal-to-noise ratio, and the detector pair resolution is 2 mm FWHM. 32 references, 7 figures, 3 tables.

  3. Implementation of Strategies to Improve the Reliability of III-Nitride Photodetectors towards the Realization of Visible and Solar-Blind Imaging Arrays

    NASA Astrophysics Data System (ADS)

    Bulmer, John J.

    isolates conductive pathways in III-Nitrides using an electrochemical etch and novel foam passivation technique. Establishing improved photodiode performance and device reliability, 4x4 and 8x8 arrays of GaN p-i-n photodiodes were demonstrated and integrated with external circuitry to generate image patterns using 360nm illumination. This work represents significant progress towards the realization of reliable III-Nitride UV detectors arrays and future directions are proposed in order to demonstrate large-scale arrays for high-resolution ultraviolet imaging.

  4. A 64 single photon avalanche diode array in 0.18 µm CMOS standard technology with versatile quenching circuit for quick prototyping

    NASA Astrophysics Data System (ADS)

    Uhring, Wilfried; Le Normand, Jean-Pierre; Zint, Virginie; Dumas, Norbert; Dadouche, Foudil; Malasse, Imane; Scholz, Jeremy

    2012-04-01

    Several works have demonstrated the successfully integration of Single-photon avalanche photodiodes (SPADs) operating in Geiger mode in a standard CMOS circuit for the last 10 years. These devices offer an exceptional temporal resolution as well as a very good optical sensitivity. Nevertheless, it is difficult to predict the expected performances of such a device. Indeed, for a similar structure of SPAD, some parameter values can differ by two orders of magnitude from a technology to another. We proposed here a procedure to identify in just one or two runs the optimal structure of SPAD available for a given technology. A circuit with an array of 64 SPAD has been realized in the Tower-Jazz 0.18 μm CMOS image sensor process. It encompasses an array of 8 different structures of SPAD reproduced in 8 diameters in the range from 5 μm up to 40 μm. According to the SPAD structures, efficient shallow trench insulator and/or P-Well guard ring are used for preventing edge breakdown. Low dark count rate of about 100 Hz are expected thanks to the use of buried n-well layer and a high resistivity substrate. Each photodiode is embedded in a pixel which includes a versatile quenching circuitry and an analog output of its cathode voltage. The quenching system is configurable in four operation modes; the SPAD is disabled, the quenching is completely passive, the reset of the photodiode is active and the quenching is fully active. The architecture of the array makes possible the characterization of every single photodiode individually. The parameters to be measured for a SPAD are the breakdown avalanche voltage, the dark count rate, the dead time, the timing jitter, the photon detection probability and the after-pulsing rate.

  5. Analysis of ependymal ciliary beat pattern and beat frequency using high speed imaging: comparison with the photomultiplier and photodiode methods

    PubMed Central

    2012-01-01

    Background The aim of this study was to compare beat frequency measurements of ependymal cilia made by digital high speed imaging to those obtained using the photomultiplier and modified photodiode techniques. Using high speed video analysis the relationship of the power and recover strokes was also determined. Methods Ciliated strips of ependyma attached to slices from the brain of Wistar rats were incubated at 30°C and observed using a ×50 water immersion lens. Ciliary beat frequency was measured using each of the three techniques: the high speed video, photodiode and photomultiplier. Readings were repeated after 30 minutes incubation at 37°C. Ependymal cilia were observed in slow motion and the precise movement of cilia during the recovery stroke relative to the path travelled during the power stroke was measured. Results The mean (95% confidence intervals) beat frequencies determined by the high speed video, photomultiplier and photodiode at 30°C were 27.7 (26.6 to 28.8), 25.5 (24.4 to 26.6) and 20.8 (20.4 to 21.3) Hz, respectively. The mean (95% confidence intervals) beat frequencies determined by the high speed video, photomultiplier and photodiode at 37°C were 36.4 (34 to 39.5), 38.4 (36.8 to 39.9) and 18.8 (16.9 to 20.5) Hz. The inter and intra observer reliability for measurement of ciliary beat frequency was 3.8% and 1%, respectively. Ependymal cilia were observed to move in a planar fashion during the power and recovery strokes with a maximum deviation to the right of the midline of 12.1(11.8 to 13.0)° during the power stroke and 12.6(11.6 to 13.6)° to the left of the midline during the recovery stroke. Conclusion The photodiode technique greatly underestimates ciliary beat frequency and should not be used to measure ependymal ciliary beat frequency at the temperatures studied. Ciliary beat frequency from the high speed video and photomultiplier techniques cannot be used interchangeably. Ependymal cilia had minimal deviation to the right side

  6. Axiom turkey genotyping array

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The Axiom®Turkey Genotyping Array interrogates 643,845 probesets on the array, covering 643,845 SNPs. The array development was led by Dr. Julie Long of the USDA-ARS Beltsville Agricultural Research Center under a public-private partnership with Hendrix Genetics, Aviagen, and Affymetrix. The Turk...

  7. The formation of GaAs/Si photodiodes by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Ullrich, Bruno; Erlacher, Artur; Jaeger, Herbert

    2004-07-01

    Hetero-pairing of thin-film GaAs on Si is of considerable interest for novel applications in optoelectronics. However, the formation of high-quality GaAs is difficult and requires expensive top technologies such as molecular beam epitaxy (MBE) and related methods. In general, MBE forms high-quality epitaxial layers but is not capable of the straightforward formation of GaAs on Si because of the 4.1% lattice mismatch between both materials. We have developed and explored the possibilities of pulsed-laser deposition (PLD) for the formation of GaAs films on (100) n-type Si substrates. The films have been produced in vacuum (10-6 torr) employing the fundamental (1064 nm), second (532 nm), and third (355 nm) harmonic emission of a Nd:YAG laser with a repetition rate of 10 Hz and a pulse duration of 6 ns. The laser was focused on (100) p-type (1019 cm-3) GaAs wafers with an energy fluence of 0.79-0.84 J/cm2. During the deposition, the substrate was not heated. The current-voltage characteristic of the samples showed rectification, i.e., the doping of the GaAs target was successfully maintained in the PLD film and a diode was formed in conjunction with the oppositely doped Si substrate. The observation of photocurrent without bias is an additional proof that an operating junction was achieved. The crystallographic quality of the films was checked by x-ray analysis and revealed that the films show [111]-oriented crystalline parts. The realization of GaAs/Si photodiodes reveals the potential of PLD to be used for the monolithic integration of GaAs photonic devices with Si circuits.

  8. Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection

    NASA Astrophysics Data System (ADS)

    Kang, Yimin; Liu, Han-Din; Morse, Mike; Paniccia, Mario J.; Zadka, Moshe; Litski, Stas; Sarid, Gadi; Pauchard, Alexandre; Kuo, Ying-Hao; Chen, Hui-Wen; Sfar Zaoui, Wissem; Bowers, John E.; Beling, Andreas; McIntosh, Dion C.; Zheng, Xiaoguang; Campbell, Joe C.

    2009-05-01

    Avalanche Photodiodes (APDs) are widely used in fiber-optic communications as well as imaging and sensing applications where high sensitivities are needed. Traditional InP-based APD receivers typically offer a 10 dB improvement in sensitivity up to 10 Gb/s when compared to standard p-i-n based detector counterparts. As the data rates increase, however, a limited gain-bandwidth product (~100GHz) results in degraded receiver sensitivity. An increasing amount of research is now focusing on alternative multiplication materials for APDs to overcome this limitation, and one of the most promising is silicon. The difficulty in realizing a silicon-based APD device at near infrared wavelengths is that a compatible absorbing material is difficult to find. Research on germanium-on-silicon p-i-n detectors has shown acceptable responsivity at wavelengths as long as 1550 nm, and this work extends the approach to the more complicated APD structure. We are reporting here a germanium-on-silicon Separate Absorption Charge and Multiplication (SACM) APD which operates at 1310 nm, with a responsivity of 0.55A/W at unity gain with long dark current densities. The measured gain bandwidth product of this device is much higher than that of a typical III-V APD. Other device performances, like reliability, sensitivity and thermal stability, will also be discussed in this talk. This basic demonstration of a new silicon photonic device is an important step towards practical APD devices operating at 40 Gb/s, as well as for new applications which require low cost, high volume receivers with high sensitivity such as imaging and sensing.

  9. Progress in development of H4RG-10 infrared focal plane arrays for WFIRST-AFTA

    NASA Astrophysics Data System (ADS)

    Piquette, Eric C.; McLevige, William; Auyeung, John; Wong, Andre

    2014-07-01

    We describe progress in the development and demonstration of Teledyne's new high resolution large format FPA for astronomy, the H4RG-10 IR. The H4RG-10 is the latest in Teledyne's H×RG line of sensors, in a 4096×4096 format using 10 micron pixels. It is offered as a hybrid sensor using either a silicon p-i-n detector array (HyViSI) or a HgCdTe photodiode array with standard infrared cutoff wavelength of 1.75μm, 2.5μm, or 5.3μm (with custom cutoff wavelengths also available). The HgCdTe sensor arrays are fully substrate removed to provide high quantum efficiency, response to visible wavelengths, and minimize cosmic ray and fringing mitigation. Packaging using either CE6 or SiC bases is available. Teledyne is currently fabricating H4RG-10 SWIR FPAs for NASA's WFIRST space telescope instrument. Initial array performance has been tested and will be presented. Key results include the demonstration of low dark current (array mean dark current of <0.01e-/s/pixel at 100K), low noise (<10 e-/CDS read noise), and high array operability (>99% pixels). The paper discusses the sensor configuration and features, the performance achieved to date including QE, dark current, noise maps and histograms, and the remaining challenges.

  10. Characterization of NIR InGaAs imager arrays for the JDEM SNAPmission concept

    SciTech Connect

    Seshadri, S.; Cole, M.D.; Hancock, B.; Ringold, P.; Wrigley, C.; Bonati, M.; Brown, M.G.; Schubnell, M.; Rahmer, G.; Guzman, D.; Figer,D.; Tarle, G.; Smith, R.M.; Bebek, C.

    2006-05-23

    We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.

  11. Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry.

    PubMed

    Fan, Zhiyong; Ho, Johnny C; Jacobson, Zachery A; Razavi, Haleh; Javey, Ali

    2008-08-12

    We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of approximately 80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 x 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.

  12. Low dark current LWIR HgCdTe focal plane arrays at AIM

    NASA Astrophysics Data System (ADS)

    Haiml, M.; Eich, D.; Fick, W.; Figgemeier, H.; Hanna, S.; Mahlein, M.; Schirmacher, W.; Thöt, R.

    2016-05-01

    Cryogenically cooled HgCdTe (MCT) quantum detectors are unequalled for applications requiring high imaging as well as high radiometric performance in the infrared spectral range. Compared with other technologies, they provide several advantages, such as the highest quantum efficiency, lower power dissipation compared to photoconductive devices, and fast response times, hence outperforming micro-bolometer arrays. AIM will present its latest results on n-on-p as well as p-on-n low dark current planar MCT photodiode focal plane detector arrays at cut-off wavelengths >11 μm at 80 K. Dark current densities below the Rule'07 have been demonstrated for n-on-p devices. Slightly higher dark current densities and excellent cosmetics with very low cluster and point defect densities have been demonstrated for p-on-n devices.

  13. Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

    NASA Astrophysics Data System (ADS)

    Lim, Seong Bin; Ji, Chan Hyuk; Kim, Kee Tae; Oh, Se Young

    2016-08-01

    Photodiodes are widely used to convert light into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low sensitivity at visible wavelengths due to their absorption of infrared wavelengths. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity at visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) with a consisting of ITO/ NiO x / P3HT:PC60BM/ YbF3/Al structure. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed by using optical-electrical measurements to determine its J-V, detectivity, and dynamic characteristics. We investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  14. Room-temperature InGaAs detector arrays for 1.0 - 1.7 microns spectroscopy

    NASA Technical Reports Server (NTRS)

    Olsen, G. H.; Joshi, A. M.; Mykietyn, E.; Colosi, J.; Woodruff, K. M.

    1989-01-01

    Linear arrays of 256 element InGaAs detectors with 100 x 30 micron pixels were mounted in multiplexer packages and tested in an optical multichannel analyzer (OMA). Typical performance characteristics include dark current (-5V) of 400 picoamps and responsivities of 0.75 A/W (1.3 microns) and 0.14 A/W (0.85 microns). The 256 element exhibited a mean room-temperature dark current of under 400 picoamps when mounted in the OMA and a dynamic range over 11 bits (2000:1). Future applications, including room-temperature detector arrays for 2.5 microns and avalanche photodiode arrays for 1.0-1.7 microns, are discussed.

  15. Superconducting Bolometer Array Architectures

    NASA Technical Reports Server (NTRS)

    Benford, Dominic; Chervenak, Jay; Irwin, Kent; Moseley, S. Harvey; Shafer, Rick; Staguhn, Johannes; Wollack, Ed; Oegerle, William (Technical Monitor)

    2002-01-01

    The next generation of far-infrared and submillimeter instruments require large arrays of detectors containing thousands of elements. These arrays will necessarily be multiplexed, and superconducting bolometer arrays are the most promising present prospect for these detectors. We discuss our current research into superconducting bolometer array technologies, which has recently resulted in the first multiplexed detections of submillimeter light and the first multiplexed astronomical observations. Prototype arrays containing 512 pixels are in production using the Pop-Up Detector (PUD) architecture, which can be extended easily to 1000 pixel arrays. Planar arrays of close-packed bolometers are being developed for the GBT (Green Bank Telescope) and for future space missions. For certain applications, such as a slewed far-infrared sky survey, feedhorncoupling of a large sparsely-filled array of bolometers is desirable, and is being developed using photolithographic feedhorn arrays. Individual detectors have achieved a Noise Equivalent Power (NEP) of -10(exp 17) W/square root of Hz at 300mK, but several orders of magnitude improvement are required and can be reached with existing technology. The testing of such ultralow-background detectors will prove difficult, as this requires optical loading of below IfW. Antenna-coupled bolometer designs have advantages for large format array designs at low powers due to their mode selectivity.

  16. High-throughput FCS using an LCOS spatial light modulator and an 8 × 1 SPAD array

    PubMed Central

    Colyer, Ryan A.; Scalia, Giuseppe; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo; Cova, Sergio; Weiss, Shimon; Michalet, Xavier

    2010-01-01

    We present a novel approach to high-throughput Fluorescence Correlation Spectroscopy (FCS) which enables us to obtain one order of magnitude improvement in acquisition time. Our approach utilizes a liquid crystal on silicon spatial light modulator to generate dynamically adjustable focal spots, and uses an eight-pixel monolithic single-photon avalanche photodiode array. We demonstrate the capabilities of this system by showing FCS of Rhodamine 6G under various viscosities, and by showing that, with proper calibration of each detection channel, one order of magnitude improvement in acquisition speed is obtained. More generally, our approach will allow higher throughput single-molecule studies to be performed. PMID:21258559

  17. Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

    PubMed

    Mu, Ying; Valim, Niksa; Niedre, Mark

    2013-06-15

    We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

  18. Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2014-05-01

    Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.

  19. Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

    2006-01-01

    Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

  20. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    NASA Technical Reports Server (NTRS)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  1. Electronic Switch Arrays for Managing Microbattery Arrays

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Alahmad, Mahmoud; Sukumar, Vinesh; Zghoul, Fadi; Buck, Kevin; Hess, Herbert; Li, Harry; Cox, David

    2008-01-01

    Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

  2. Carbon nanotube nanoelectrode arrays

    DOEpatents

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  3. Pacific Array (Transportable Broadband Ocean Floor Array)

    NASA Astrophysics Data System (ADS)

    Kawakatsu, Hitoshi; Ekstrom, Goran; Evans, Rob; Forsyth, Don; Gaherty, Jim; Kennett, Brian; Montagner, Jean-Paul; Utada, Hisashi

    2016-04-01

    Based on recent developments on broadband ocean bottom seismometry, we propose a next generation large-scale array experiment in the ocean. Recent advances in ocean bottom broadband seismometry1, together with advances in the seismic analysis methodology, have enabled us to resolve the regional 1-D structure of the entire lithosphere/asthenosphere system, including seismic anisotropy (azimuthal, and hopefully radial), with deployments of ~15 broadband ocean bottom seismometers (BBOBSs). Having ~15 BBOBSs as an array unit for a 2-year deployment, and repeating such deployments in a leap-frog way or concurrently (an array of arrays) for a decade or so would enable us to cover a large portion of the Pacific basin. Such efforts, not only by giving regional constraints on the 1-D structure beneath Pacific ocean, but also by sharing waveform data for global scale waveform tomography, would drastically increase our knowledge of how plate tectonics works on this planet, as well as how it worked for the past 150 million years. International collaborations is essential: if three countries/institutions participate this endeavor together, Pacific Array may be accomplished within five-or-so years.

  4. Betabox: a beta particle imaging system based on a position sensitive avalanche photodiode

    PubMed Central

    Dooraghi, AA; Vu, NT; Silverman, RW; Farrell, R; Shah, KS; Wang, J; Heath, JR; Chatziioannou, AF

    2013-01-01

    A beta camera has been developed that allows planar imaging of the spatial and temporal distribution of beta particles using a 14 × 14 mm2 position sensitive avalanche photodiode (PSAPD). This camera system, which we call Betabox, can be directly coupled to microfluidic chips designed for cell incubation or other biological applications. Betabox allows for imaging the cellular uptake of molecular imaging probes labeled with charged particle emitters such as 18F inside these chips. In this work, we investigate the quantitative imaging capabilities of Betabox for 18F beta particles, in terms of background rate, efficiency, spatial resolution, and count rate. Measurements of background and spatial resolution are considered both at room temperature (21 °C ± 1 °C) and at an elevated operating temperature (37 °C ± 1 °C), as is often required for biological assays. The background rate measured with a 4 keV energy cutoff is below 2 cph mm−2 at both 21 and 37 °C. The absolute efficiency of Betabox for the detection of 18F positron sources in contact with a PSAPD with the surface passivated from ambient light and damage is 46% ± 1%. The lower detection limit is estimated using the Rose Criterion to be 0.2 cps mm−2 for 1 min acquisitions and a 62 × 62 µm2 pixel size. The upper detection limit is approximately 21 000 cps. The spatial resolution at both 21 and 37 °C ranges from 0.4 mm FWHM at the center of the field of view (FOV), and degrades to 1 mm at a distance of 5 mm away from center yielding a useful FOV of approximately 10 × 10 mm2. We also investigate the effects on spatial resolution and sensitivity that result from the use of a polymer based microfluidic chip. For these studies we place varying layers of low-density polyethylene (LDPE) between the detector and the source and find that the spatial resolution degrades by ~180 µm for every 100 µm of LDPE film. Sensitivity is reduced by half with the inclusion of ~200 µm of additional LDPE film

  5. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    NASA Astrophysics Data System (ADS)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  6. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    SciTech Connect

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji

    2015-09-07

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found

  7. A 10Gb/s transimpedance amplifier for hybrid integration of a Ge PIN waveguide photodiode

    NASA Astrophysics Data System (ADS)

    Polzer, A.; Gaberl, W.; Swoboda, R.; Zimmermann, H.; Fedeli, J.-M.; Vivien, L.

    2010-05-01

    The presented paper describes a 10 Gbps optical receiver. The transimpedance amplifier (TIA) is realized in standard 0.35 μm SiGe BiCMOS technology. The main novelty of the presented design - investigated in the European Community project HELIOS - is the hybrid connection of the optical detector. The used Germanium photodetector will be directly mounted onto the receiver. A model of the relevant parasitics of the photodetector itself and the novel connection elements (micropads, metal vias and metal lines) is described. Based on this photodetector model an optical receiver circuit was optimized for maximum sensitivity at data rates in the range of 10 Gbps. The design combines a TIA and two limiting amplifier stages followed by a 50 Ω CML-style logic-level output driver. To minimize power supply noise and substrate noise, a fully differential design is used. A dummy TIA provides a symmetrical input signal reference and a control loop is used to compensate the offset levels. The TIA is built around a common-emitter stage and features a feedback resistor of 4.2 Ω. The total transimpedance of the complete receiver chain is in the range of 275 kΩ. The value of the active feedback resistor can be reduced via an external control voltage to adapt the design to different overall gain requirements. The two limiting amplifier stages are realized as differential amplifiers with voltage followers. The output buffer is implemented with cascode differential amplifiers. The output buffer is capable of driving a differential 50Ω output with a calculated output swing of 800mVp-p. Simulations show an overall bandwidth of 7.2 GHz. The lower cutoff frequency is below 60 kHz. The equivalent input noise current is 408 nA. With an estimated total photodiode responsivity of 0.5 A/W this allows a sensitivity of around - 23.1 dBm (BER = 10-9). The device operates from a single 3.3 V power supply and the TIAs and the limiting amplifier consume 32 mA.

  8. Active aperture phased arrays

    NASA Astrophysics Data System (ADS)

    Shenoy, R. P.

    1989-04-01

    Developments towards the realization of active aperture phased arrays are reviewed. The technology and cost aspects of the power amplifier and phase shifter subsystems are discussed. Consideration is given to research concerning T/R modules, MESFETs, side lobe control, beam steering, optical control techniques, and printed circuit antennas. Methods for configuring the array are examined, focusing on the tile and brick configurations. It is found that there is no technological impediment for introducing active aperture phased arrays.

  9. Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage.

    PubMed

    Yang, Gang; Li, Yong-Feng; Yao, Bin; Ding, Zhan-Hui; Deng, Rui; Fang, Xuan; Wei, Zhi-Peng

    2015-08-05

    We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method. Current-voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed to interpret the spectral response of the device.

  10. A photovoltaic array simulator

    NASA Astrophysics Data System (ADS)

    Vachtsevanos, G. J.; Grimbas, E. J.

    A system simulating the output voltage-current characteristics of a photovoltaic array is described. The simulator may be used to test the performance of PV arrays and associated power conditioning equipment necessary for the autonomous or interconnected operation of photovoltaic energy sources. The simulator's main features include simplicity of construction, wide parametric variability and low cost. It is capable of reproducing the output characteristics of commercially available arrays at varying solar irradiation levels with sufficient accuracy. The design ensures the lowest possible power dissipation and minimal thermal drift. It is estimated that the cost of the simulator is an insignificant fraction of the actual array cost in the kilowatt power range.

  11. Interferometric array generation

    NASA Astrophysics Data System (ADS)

    Patra, A. S.; Khare, Alika

    2006-02-01

    We report the formation of square, rectangular as well as hexagonal arrays of small light spots in one single setup using Michelson and Mach-Zehnder interferometers in tandem. The geometry of arrays can be altered easily online, by changing the relative orientations of the mirrors. The arrays could be scanned over large longitudinal distances and could be compressed to give large spot density. The expression for the resultant intensity distribution for the arrays has been worked out and the computed pattern is compared with the experimental data.

  12. Focal plane array with modular pixel array components for scalability

    SciTech Connect

    Kay, Randolph R; Campbell, David V; Shinde, Subhash L; Rienstra, Jeffrey L; Serkland, Darwin K; Holmes, Michael L

    2014-12-09

    A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitch is preserved across the enlarged pixel array.

  13. Solar array stepping to minimize array excitation

    NASA Technical Reports Server (NTRS)

    Bhat, Mahabaleshwar K. P. (Inventor); Liu, Tung Y. (Inventor); Plescia, Carl T. (Inventor)

    1989-01-01

    Mechanical oscillations of a mechanism containing a stepper motor, such as a solar-array powered spacecraft, are reduced and minimized by the execution of step movements in pairs of steps, the period between steps being equal to one-half of the period of torsional oscillation of the mechanism. Each pair of steps is repeated at needed intervals to maintain desired continuous movement of the portion of elements to be moved, such as the solar array of a spacecraft. In order to account for uncertainty as well as slow change in the period of torsional oscillation, a command unit may be provided for varying the interval between steps in a pair.

  14. Focal plane arrays from UV up to VLWIR

    NASA Astrophysics Data System (ADS)

    Costard, E.; Nedelcu, A.; Achouche, M.; Reverchon, J. L.; Truffer, J. P.; Huet, O.; Dua, L.; Robo, J. A.; Marcadet, X.; Brière de l'Isle, N.; Facoetti, H.; Bois, P.

    2007-10-01

    Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multispectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (<5μm) and VLWIR (>15μm) arrays. As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our first FPA realization in UV with GaN alloy, and at 1.5μm with InGaAs photodiodes.

  15. Autocorrelation measurement of femtosecond laser pulses based on two-photon absorption in GaP photodiode

    SciTech Connect

    Chong, E. Z.; Watson, T. F.; Festy, F.

    2014-08-11

    Semiconductor materials which exhibit two-photon absorption characteristic within a spectral region of interest can be useful in building an ultra-compact interferometric autocorrelator. In this paper, we report on the evidence of a nonlinear absorption process in GaP photodiodes which was exploited to measure the temporal profile of femtosecond Ti:sapphire laser pulses with a tunable peak wavelength above 680 nm. The two-photon mediated conductivity measurements were performed at an average laser power of less than a few tenths of milliwatts. Its suitability as a single detector in a broadband autocorrelator setup was assessed by investigating the nonlinear spectral sensitivity bandwidth of a GaP photodiode. The highly favourable nonlinear response was found to cover the entire tuning range of our Ti:sapphire laser and can potentially be extended to wavelengths below 680 nm. We also demonstrated the flexibility of GaP in determining the optimum compensation value of the group delay dispersion required to restore the positively chirped pulses inherent in our experimental optical system to the shortest pulse width possible. With the rise in the popularity of nonlinear microscopy, the broad two-photon response of GaP and the simplicity of this technique can provide an alternative way of measuring the excitation laser pulse duration at the focal point of any microscopy systems.

  16. High-resolution mapping of the energy conversion efficiency of solar cells and silicon photodiodes in photovoltaic mode

    NASA Astrophysics Data System (ADS)

    Cemine, Vernon Julius; Sarmiento, Raymund; Blanca, Carlo Mar

    2008-11-01

    We demonstrate an optical technique to derive the two-dimensional energy conversion efficiency ( ηCE), fill factor (FF) and external quantum efficiency ( ηQE) distributions across the surface of photovoltaic devices. A compact, inexpensive optical-feedback laser diode microscope is constructed to acquire the confocal reflectance and efficiency maps enabling the observation of the local parametric behavior in silicon photodiodes in photovoltaic mode and single-junction solar cells. The ηCE and ηQE distributions are greatly influenced by local parasitic resistances that depend on laser irradiance. These parasitic resistances decrease the ηCE and ηQE values with distance from the contact electrode at high laser irradiance. The optical technique enables microscopic comparison of ηCE and ηQE within the pn-overlay region of the photodiode sample, revealing its optimization for photodetection rather than power generation. The technique also elucidates the decreasing local ηCE of the solar cell under intense irradiation.

  17. Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Ciancaglioni, I.; Di Venanzio, C.; Marinelli, Marco; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Tartoni, N.

    2011-09-01

    X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome "Tor Vergata" University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal diamond grown by chemical vapor deposition. Their impact on the detection performance in the extreme UV and soft x-ray spectral regions was studied. The electrical characterization of the metal/diamond Schottky junctions was performed at room temperature by measuring the capacitance-voltage characteristics. The diamond photodiodes were then tested both over the extreme UV spectral region from 10 to 60 eV by using He-Ne DC gas discharge as a radiation source and toroidal vacuum monochromator, and in the soft x-ray range from 6 to 20 keV at the Diamond Light Source synchrotron x-ray beam-line in Harwell (UK). In both experimental setups, time response and spectral responsivity were analyzed for all the investigated Schottky contact materials. A good agreement between the experimental data and theoretical results from Monte Carlo simulations is found

  18. Autocorrelation measurement of femtosecond laser pulses based on two-photon absorption in GaP photodiode

    NASA Astrophysics Data System (ADS)

    Chong, E. Z.; Watson, T. F.; Festy, F.

    2014-08-01

    Semiconductor materials which exhibit two-photon absorption characteristic within a spectral region of interest can be useful in building an ultra-compact interferometric autocorrelator. In this paper, we report on the evidence of a nonlinear absorption process in GaP photodiodes which was exploited to measure the temporal profile of femtosecond Ti:sapphire laser pulses with a tunable peak wavelength above 680 nm. The two-photon mediated conductivity measurements were performed at an average laser power of less than a few tenths of milliwatts. Its suitability as a single detector in a broadband autocorrelator setup was assessed by investigating the nonlinear spectral sensitivity bandwidth of a GaP photodiode. The highly favourable nonlinear response was found to cover the entire tuning range of our Ti:sapphire laser and can potentially be extended to wavelengths below 680 nm. We also demonstrated the flexibility of GaP in determining the optimum compensation value of the group delay dispersion required to restore the positively chirped pulses inherent in our experimental optical system to the shortest pulse width possible. With the rise in the popularity of nonlinear microscopy, the broad two-photon response of GaP and the simplicity of this technique can provide an alternative way of measuring the excitation laser pulse duration at the focal point of any microscopy systems.

  19. Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Gohil, T.; Lioliou, G.; Barnett, A. M.

    2016-09-01

    The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2 and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2 diodes; 227 kV/cm for 0.5 mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2 and 0.5 mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.

  20. The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

    NASA Technical Reports Server (NTRS)

    Rosenfeld, D.; Bahir, G.

    1993-01-01

    A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

  1. Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

    NASA Astrophysics Data System (ADS)

    Rao, Gowrish K.

    2017-04-01

    The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

  2. Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Karpukhina, N. G.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-05-01

    P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10-6 A/cm2, Vbias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D3.1μm ∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated.

  3. Non-volatile resistive photo-switches for flexible image detector arrays

    NASA Astrophysics Data System (ADS)

    Nau, Sebastian; Wolf, Christoph; Sax, Stefan; List-Kratochvil, Emil J. W.

    2015-09-01

    The increasing quest to find lightweight, conformable or flexible image detectors for machine vision or medical imaging brings organic electronics into the spotlight for these fields of application. Here were we introduce a unique imaging device concept and its utilization in an organic, flexible detector array with simple passive matrix wiring. We present a flexible organic image detector array built up from non-volatile resistive multi-bit photo-switchable elements. This unique realization is based on an organic photodiode combined with an organic resistive memory device wired in a simple crossbar configuration. The presented concept exhibits significant advantages compared to present organic and inorganic detector array technologies, facilitating the detection and simultaneous storage of the image information in one detector pixel, yet also allowing for simple read-out of the information from a simple passive-matrix crossbar wiring. This concept is demonstrated for single photo-switchable pixels as well as for arrays with sizes up to 32 by 32 pixels (1024 bit). The presented results pave the way for a versatile flexible and easy-to-fabricate sensor array technology. In a final step, the concept was expanded to detection of x-rays.

  4. EUV detectors based on AlGaN-on-Si Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Malinowski, P. E.; Duboz, J.-Y.; De Moor, P.; Minoglou, K.; John, J.; Srivastava, P.; Semond, F.; Frayssinet, E.; BenMoussa, A.; Giordanengo, B.; Van Hoof, C.; Mertens, R.

    2011-05-01

    Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays. Sensitivity in different configurations was demonstrated, including front- and backside illumination. The latter was possible after integration of the detector chips with dedicated Si-based readouts using high-density In bump arrays and flip-chip bonding. In order to avoid radiation absorption in silicon, the substrate was removed, leaving a submicron-thin membrane of AlGaN active layer suspended on top of an array of In bumps. Optoelectrical characterization was performed using different UV light sources, also in the synchrotron beamlines providing radiation down to the EUV range. The measured cut-off wavelength of the active layer used was 280 nm, with a rejection ratio of the visible radiation above 3 orders of magnitude. Spectral responsivity and quantum efficiency values

  5. ISS Solar Array Management

    NASA Technical Reports Server (NTRS)

    Williams, James P.; Martin, Keith D.; Thomas, Justin R.; Caro, Samuel

    2010-01-01

    The International Space Station (ISS) Solar Array Management (SAM) software toolset provides the capabilities necessary to operate a spacecraft with complex solar array constraints. It monitors spacecraft telemetry and provides interpretations of solar array constraint data in an intuitive manner. The toolset provides extensive situational awareness to ensure mission success by analyzing power generation needs, array motion constraints, and structural loading situations. The software suite consists of several components including samCS (constraint set selector), samShadyTimers (array shadowing timers), samWin (visualization GUI), samLock (array motion constraint computation), and samJet (attitude control system configuration selector). It provides high availability and uptime for extended and continuous mission support. It is able to support two-degrees-of-freedom (DOF) array positioning and supports up to ten simultaneous constraints with intuitive 1D and 2D decision support visualizations of constraint data. Display synchronization is enabled across a networked control center and multiple methods for constraint data interpolation are supported. Use of this software toolset increases flight safety, reduces mission support effort, optimizes solar array operation for achieving mission goals, and has run for weeks at a time without issues. The SAM toolset is currently used in ISS real-time mission operations.

  6. Array for detecting microbes

    DOEpatents

    Andersen, Gary L.; DeSantis, Todd D.

    2014-07-08

    The present embodiments relate to an array system for detecting and identifying biomolecules and organisms. More specifically, the present embodiments relate to an array system comprising a microarray configured to simultaneously detect a plurality of organisms in a sample at a high confidence level.

  7. Solar array deployment mechanism

    NASA Technical Reports Server (NTRS)

    Calassa, Mark C.; Kackley, Russell

    1995-01-01

    This paper describes a Solar Array Deployment Mechanism (SADM) used to deploy a rigid solar array panel on a commercial spacecraft. The application required a deployment mechanism design that was not only lightweight, but also could be produced and installed at the lowest possible cost. This paper covers design, test, and analysis of a mechanism that meets these requirements.

  8. High density pixel array

    NASA Technical Reports Server (NTRS)

    Wiener-Avnear, Eliezer (Inventor); McFall, James Earl (Inventor)

    2004-01-01

    A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

  9. Micromachined electrode array

    DOEpatents

    Okandan, Murat; Wessendorf, Kurt O.

    2007-12-11

    An electrode array is disclosed which has applications for neural stimulation and sensing. The electrode array, in certain embodiments, can include a plurality of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. In other embodiments of the electrode array, the electrodes can be fixed to the substrate. The electrode array can be formed from a combination of bulk and surface micromachining, and can include electrode tips having an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis.

  10. Photovoltaic array loss mechanisms

    NASA Astrophysics Data System (ADS)

    Gonzalez, Charles

    1986-10-01

    Loss mechanisms which come into play when solar cell modules are mounted in arrays are identified. Losses can occur either from a reduction in the array electrical performance or with nonoptimal extraction of power from the array. Electrical performance degradation is caused by electrical mismatch, transmission losses from cell surface soiling and steep angle of reflectance, and electrical losses from field wiring resistance and the voltage drop across blocking diodes. The second type of loss, concerned with the operating points of the array, can involve nonoptimal load impedance and limiting the operating envelope of the array to specific ranges of voltage and current. Each of the loss mechanisms are discussed and average energy losses expected from soiling, steep reflectance angles and circuit losses are calculated.

  11. Multibeam Phased Array Antennas

    NASA Technical Reports Server (NTRS)

    Popovic, Zoya; Romisch, Stefania; Rondineau, Sebastien

    2004-01-01

    In this study, a new architecture for Ka-band multi-beam arrays was developed and demonstrated experimentally. The goal of the investigation was to demonstrate a new architecture that has the potential of reducing the cost as compared to standard expensive phased array technology. The goals of this specific part of the project, as stated in the yearly statement of work in the original proposal are: 1. Investigate bounds on performance of multi-beam lens arrays in terms of beamwidths, volume (size), isolation between beams, number of simultaneous beams, etc. 2. Design a small-scale array to demonstrate the principle. The array will be designed for operation around 3OGHz (Ka-band), with two 10-degree beamwidth beams. 3. Investigate most appropriate way to accomplish fine-tuning of the beam pointing within 5 degrees around the main beam pointing angle.

  12. Microfabricated ion trap array

    DOEpatents

    Blain, Matthew G.; Fleming, James G.

    2006-12-26

    A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

  13. Auger Recombination and Impact Ionization in Semiconductor Lasers and Avalanche Photodiodes.

    NASA Astrophysics Data System (ADS)

    Jiang, Yuan

    The telecommunication industry has been advancing very fast. Having used.8 μm optical fiber systems for a short time, the industry has quickly shifted to 1.3 and 1.5 μm optical fiber communication systems to achieve lower loss and longer distance between repeaters. However, the performance of the transmitters and receivers in the current long wavelength communication systems is not able to match that in the 0.8 μm communication system. The most serious problem with InGaAsP/InP lasers for 1.3 and 1.5 μm communications is their poor temperature performance. The threshold current of these lasers increases drastically with temperature at room temperature. This either causes thermal-run-off or makes a thermal controller a necessity even for a low -power laser. Studies have shown that the poor temperature performance in InGaAsP/InP lasers is caused by Auger recombination carrier losses. In GaAs lasers, Auger recombination carrier loss is not severe enough to degrade performance. However, it has been the major problem for most long-wavelength semiconductor lasers, such as InGaAsP/InP lasers for 1.3 and 1.5 μm communications. Not only transmitters, but also receivers for 1.3 and 1.5 μm communications face similar challenge. The performance of the InGaAsP/InP avalanche photodiodes (APDs) used in current systems is far from that of the Si APDs, which are nearly perfect, used in 0.8 μm systems. Avalanche (impact ionization) processes are the reverse Auger processes --carrier creation processes. They provide current amplification. Because virtually only one type of carrier (electron) multiplies in Si, the APDs have low noise figure and high gain-bandwidth products. The electron and hole impact ionization rates in InP are alike, which means the multiplication is a delayed positive feedback process. Therefore, these APDs are noisy amplifiers and have low gain-bandwidth products. At the best operating condition, the gain for a Si APD of several hundreds is typical, whereas

  14. Developing an Inflatable Solar Array

    NASA Technical Reports Server (NTRS)

    Malone, Patrick K.; Jankowski, Francis J.; Williams, Geoffery T.; Vendura, George J., Jr.

    1992-01-01

    Viewgraphs describing the development of an inflatable solar array as part of the Inflatable Torus Solar Array Technology (ITSAT) program are presented. Program phases, overall and subsystem designs, and array deployment are addressed.

  15. 25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

    PubMed

    Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

    2014-01-13

    25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

  16. In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Khan, Al-Sameen; Berger, Paul R.; Hunsperger, R. G.; Zydzik, George; O'Bryan, H. M.; Sivco, D.; Cho, A. Y.

    1994-10-01

    A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

  17. Carrier transport mechanism of highly-sensitive niobium doped titanium dioxide/p-Si heterojunction photodiode under illuminations by solar simulated light

    NASA Astrophysics Data System (ADS)

    Gautam, Subodh K.; Das, Arkaprava; Singh, R. G.; Kumar, V. V. S.; Singh, Fouran

    2016-12-01

    Nano-crystalline Nb doped anatase TiO2 (NTO) thin film was deposited on p-type Si substrate for fabrication of n-NTO/p-Si heterojunction photodiode using RF magnetron sputtering technique. Rutherford backscattering spectrometry and Raman spectroscopy results suggest the substitutional incorporation of Nb5+ ions in anatase TiO2 lattice, which is evidenced from large stiffening of Eg(1) and softening of B1g Raman modes. The current density-voltage (J-V) characteristics are measured and important diode parameters of n-NTO/p-Si heterojunction diode are determined, such as ideality factor, barrier height, and series resistance. Diode exhibits excellent behavior under dark condition as rectification ratio is found to be ˜7 × 102 with high forward current density ˜1.54 A/cm2 at 5 V. The n-NTO/p-Si heterojunction works as an efficient photodiode in reverse bias under simulated solar light illumination with high contrast ratio ˜225 at -2 V and very high photo responsivity ˜2.7 A/W at -5 V. The high photo responsivity of photodiode is mainly due to the generation of high density electron-hole plasma in NTO depletion region by the absorption of incident UV range photons. Thus n-NTO/p-Si heterojunction diode is suitable device for highly sensitive Ultra-Violet photodiode applications.

  18. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  19. Description of the Role of Shot Noise in Spectroscopic Absorption and Emission Measurements with Photodiode and Photomultiplier Tube Detectors: Information for an Instrumental Analysis Course

    ERIC Educational Resources Information Center

    McClain, Robert L.; Wright, John C.

    2014-01-01

    A description of shot noise and the role it plays in absorption and emission measurements using photodiode and photomultiplier tube detection systems is presented. This description includes derivations of useful forms of the shot noise equation based on Poisson counting statistics. This approach can deepen student understanding of a fundamental…

  20. Dense array expressions

    NASA Astrophysics Data System (ADS)

    Wilson, Joseph N.; Chen, LiangMing

    1999-10-01

    Various researchers have realized the value of implementing loop fusion to evaluate dense (pointwise) array expressions. Recently, the method of template metaprogramming in C++ has been used to significantly speed-up the evaluation of array expressions, allowing C++ programs to achieve performance comparable to or better than FORTRAN for numerical analysis applications. Unfortunately, the template metaprogramming technique suffers from several limitations in applicability, portability, and potential performance. We present a framework for evaluating dense array expressions in object-oriented programming languages. We demonstrate how this technique supports both common subexpression elimination and threaded implementation and compare its performance to object-library and hand-generated code.