Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices

PubMed Central

Chen, Duan; Wei, Guo-Wei

2010-01-01

The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence and model well-posedness are also investigated in the present work. PMID:20396650

Electronic components embedded in a single graphene nanoribbon.

PubMed

Jacobse, P H; Kimouche, A; Gebraad, T; Ervasti, M M; Thijssen, J M; Liljeroth, P; Swart, I

2017-07-25

The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate contacts and more functionality directly into single ribbons by using heterostructures. Here, we use the on-surface synthesis approach to fabricate a metal-semiconductor junction and a tunnel barrier in a single graphene nanoribbon consisting of 5- and 7-atom wide segments. We characterize the atomic scale geometry and electronic structure by combined atomic force microscopy, scanning tunneling microscopy, and conductance measurements complemented by density functional theory and transport calculations. These junctions are relevant for developing contacts in all-graphene nanoribbon devices and creating diodes and transistors, and act as a first step toward complete electronic devices built into a single graphene nanoribbon.Adding functional electronic components to graphene nanoribbons requires precise control over their atomic structure. Here, the authors use a bottom-up approach to build a metal-semiconductor junction and a tunnel barrier directly into a single graphene nanoribbon, an exciting development for graphene-based electronic devices.

Synthesis of monolithic graphene – graphite integrated electronics

PubMed Central

Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M.

2013-01-01

Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems1 with functions defined by synthesis2-6. Graphene7-12 has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication13-20. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically-integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous catalyst metals permits the selective growth of graphene and graphite, with controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from synthesis. These functional, all-carbon structures were transferrable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing, and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent a substantial progress towards encoding electronic functionality via chemical synthesis and suggest future promise for one-step integration of graphene-graphite based electronics. PMID:22101813

Synthesis of monolithic graphene-graphite integrated electronics.

PubMed

Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M

2011-11-20

Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.

Thermal electron-tunneling devices as coolers and amplifiers

NASA Astrophysics Data System (ADS)

Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

2016-02-01

Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

Thermal electron-tunneling devices as coolers and amplifiers

PubMed Central

Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

2016-01-01

Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices. PMID:26893109

Materials and processing approaches for foundry-compatible transient electronics.

PubMed

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A; Song, Enming; Yu, Xinge; Rogers, John A

2017-07-11

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are ( i ) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, ( ii ) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and ( iii ) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Materials and processing approaches for foundry-compatible transient electronics

NASA Astrophysics Data System (ADS)

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-07-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

9 CFR 86.4 - Official identification.

Code of Federal Regulations, 2014 CFR

2014-01-01

... the ear); (iii) Malfunction of the electronic component of a radio frequency identification (RFID) device; or (iv) Incompatibility or inoperability of the electronic component of an RFID device with the management system or unacceptable functionality of the management system due to use of an RFID device. (2...

Adaptive oxide electronics: A review

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Ramanathan, Shriram

2011-10-01

Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may be needed to realize the full potential of adaptive oxide electronics.

Silk-based resorbable electronic devices for remotely controlled therapy and in vivo infection abatement

PubMed Central

Tao, Hu; Hwang, Suk-Won; Marelli, Benedetto; An, Bo; Moreau, Jodie E.; Yang, Miaomiao; Brenckle, Mark A.; Kim, Stanley; Kaplan, David L.; Rogers, John A.; Omenetto, Fiorenzo G.

2014-01-01

A paradigm shift for implantable medical devices lies at the confluence between regenerative medicine, where materials remodel and integrate in the biological milieu, and technology, through the use of recently developed material platforms based on biomaterials and bioresorbable technologies such as optics and electronics. The union of materials and technology in this context enables a class of biomedical devices that can be optically or electronically functional and yet harmlessly degrade once their use is complete. We present here a fully degradable, remotely controlled, implantable therapeutic device operating in vivo to counter a Staphylococcus aureus infection that disappears once its function is complete. This class of device provides fully resorbable packaging and electronics that can be turned on remotely, after implantation, to provide the necessary thermal therapy or trigger drug delivery. Such externally controllable, resorbable devices not only obviate the need for secondary surgeries and retrieval, but also have extended utility as therapeutic devices that can be left behind at a surgical or suturing site, following intervention, and can be externally controlled to allow for infection management by either thermal treatment or by remote triggering of drug release when there is retardation of antibiotic diffusion, deep infections are present, or when systemic antibiotic treatment alone is insufficient due to the emergence of antibiotic-resistant strains. After completion of function, the device is safely resorbed into the body, within a programmable period. PMID:25422476

Silk-based resorbable electronic devices for remotely controlled therapy and in vivo infection abatement.

PubMed

Tao, Hu; Hwang, Suk-Won; Marelli, Benedetto; An, Bo; Moreau, Jodie E; Yang, Miaomiao; Brenckle, Mark A; Kim, Stanley; Kaplan, David L; Rogers, John A; Omenetto, Fiorenzo G

2014-12-09

A paradigm shift for implantable medical devices lies at the confluence between regenerative medicine, where materials remodel and integrate in the biological milieu, and technology, through the use of recently developed material platforms based on biomaterials and bioresorbable technologies such as optics and electronics. The union of materials and technology in this context enables a class of biomedical devices that can be optically or electronically functional and yet harmlessly degrade once their use is complete. We present here a fully degradable, remotely controlled, implantable therapeutic device operating in vivo to counter a Staphylococcus aureus infection that disappears once its function is complete. This class of device provides fully resorbable packaging and electronics that can be turned on remotely, after implantation, to provide the necessary thermal therapy or trigger drug delivery. Such externally controllable, resorbable devices not only obviate the need for secondary surgeries and retrieval, but also have extended utility as therapeutic devices that can be left behind at a surgical or suturing site, following intervention, and can be externally controlled to allow for infection management by either thermal treatment or by remote triggering of drug release when there is retardation of antibiotic diffusion, deep infections are present, or when systemic antibiotic treatment alone is insufficient due to the emergence of antibiotic-resistant strains. After completion of function, the device is safely resorbed into the body, within a programmable period.

A device adaptive inflow boundary condition for Wigner equations of quantum transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Haiyan; Lu, Tiao; Cai, Wei, E-mail: wcai@uncc.edu

2014-02-01

In this paper, an improved inflow boundary condition is proposed for Wigner equations in simulating a resonant tunneling diode (RTD), which takes into consideration the band structure of the device. The original Frensley inflow boundary condition prescribes the Wigner distribution function at the device boundary to be the semi-classical Fermi–Dirac distribution for free electrons in the device contacts without considering the effect of the quantum interaction inside the quantum device. The proposed device adaptive inflow boundary condition includes this effect by assigning the Wigner distribution to the value obtained from the Wigner transform of wave functions inside the device atmore » zero external bias voltage, thus including the dominant effect on the electron distribution in the contacts due to the device internal band energy profile. Numerical results on computing the electron density inside the RTD under various incident waves and non-zero bias conditions show much improvement by the new boundary condition over the traditional Frensley inflow boundary condition.« less

Appendage mountable electronic devices conformable to surfaces

DOEpatents

Rogers, John; Ying, Ming; Bonifas, Andrew; Lu, Nanshu

2017-01-24

Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

PubMed

Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

2014-08-20

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Structures and electronic states of halogen-terminated graphene nano-flakes

NASA Astrophysics Data System (ADS)

Tachikawa, Hiroto; Iyama, Tetsuji

2015-12-01

Halogen-functionalized graphenes are utilized as electronic devices and energy materials. In the present paper, the effects of halogen-termination of graphene edge on the structures and electronic states of graphene flakes have been investigated by means of density functional theory (DFT) method. It was found that the ionization potential (Ip) and electron affinity of graphene (EA) are blue-shifted by the halogen termination, while the excitation energy is red-shifted. The drastic change showed a possibility as electronic devices such as field-effect transistors. The change of electronic states caused by the halogen termination of graphene edge was discussed on the basis of the theoretical results.

Materials and processing approaches for foundry-compatible transient electronics

PubMed Central

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-01-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

Stretchable inorganic nanomembrane electronics for healthcare devices

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeong; Son, Donghee; Kim, Jaemin

2015-05-01

Flexible or stretchable electronic devices for healthcare technologies have attracted much attention in terms of usefulness to assist doctors in their operating rooms and to monitor patients' physical conditions for a long period of time. Each device to monitor the patients' physiological signals real-time, such as strain, pressure, temperature, and humidity, etc. has been reported recently. However, their limitations are found in acquisition of various physiological signals simultaneously because all the functions are not assembled in one skin-like electronic system. Here, we describe a skin-like, multi-functional healthcare system, which includes single crystalline silicon nanomembrane based sensors, nanoparticle-integrated non-volatile memory modules, electro-resistive thermal actuators, and drug delivery. Smart prosthetics coupled with therapeutic electronic system would provide new approaches to personalized healthcare.

3D Printed Stretchable Tactile Sensors.

PubMed

Guo, Shuang-Zhuang; Qiu, Kaiyan; Meng, Fanben; Park, Sung Hyun; McAlpine, Michael C

2017-07-01

The development of methods for the 3D printing of multifunctional devices could impact areas ranging from wearable electronics and energy harvesting devices to smart prosthetics and human-machine interfaces. Recently, the development of stretchable electronic devices has accelerated, concomitant with advances in functional materials and fabrication processes. In particular, novel strategies have been developed to enable the intimate biointegration of wearable electronic devices with human skin in ways that bypass the mechanical and thermal restrictions of traditional microfabrication technologies. Here, a multimaterial, multiscale, and multifunctional 3D printing approach is employed to fabricate 3D tactile sensors under ambient conditions conformally onto freeform surfaces. The customized sensor is demonstrated with the capabilities of detecting and differentiating human movements, including pulse monitoring and finger motions. The custom 3D printing of functional materials and devices opens new routes for the biointegration of various sensors in wearable electronics systems, and toward advanced bionic skin applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stretchable and Tunable Microtectonic ZnO-Based Sensors and Photonics.

PubMed

Gutruf, Philipp; Zeller, Eike; Walia, Sumeet; Nili, Hussein; Sriram, Sharath; Bhaskaran, Madhu

2015-09-16

The concept of realizing electronic applications on elastically stretchable "skins" that conform to irregularly shaped surfaces is revolutionizing fundamental research into mechanics and materials that can enable high performance stretchable devices. The ability to operate electronic devices under various mechanically stressed states can provide a set of unique functionalities that are beyond the capabilities of conventional rigid electronics. Here, a distinctive microtectonic effect enabled oxygen-deficient, nanopatterned zinc oxide (ZnO) thin films on an elastomeric substrate are introduced to realize large area, stretchable, transparent, and ultraportable sensors. The unique surface structures are exploited to create stretchable gas and ultraviolet light sensors, where the functional oxide itself is stretchable, both of which outperform their rigid counterparts under room temperature conditions. Nanoscale ZnO features are embedded in an elastomeric matrix function as tunable diffraction gratings, capable of sensing displacements with nanometre accuracy. These devices and the microtectonic oxide thin film approach show promise in enabling functional, transparent, and wearable electronics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural complexities in the active layers of organic electronics.

PubMed

Lee, Stephanie S; Loo, Yueh-Lin

2010-01-01

The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

Deformable devices with integrated functional nanomaterials for wearable electronics.

PubMed

Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

2016-01-01

As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

Deformable devices with integrated functional nanomaterials for wearable electronics

NASA Astrophysics Data System (ADS)

Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

2016-03-01

As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

Ionic current devices-Recent progress in the merging of electronic, microfluidic, and biomimetic structures.

PubMed

Koo, Hyung-Jun; Velev, Orlin D

2013-05-09

We review the recent progress in the emerging area of devices and circuits operating on the basis of ionic currents. These devices operate at the intersection of electrochemistry, electronics, and microfluidics, and their potential applications are inspired by essential biological processes such as neural transmission. Ionic current rectification has been demonstrated in diode-like devices containing electrolyte solutions, hydrogel, or hydrated nanofilms. More complex functions have been realized in ionic current based transistors, solar cells, and switching memory devices. Microfluidic channels and networks-an intrinsic component of the ionic devices-could play the role of wires and circuits in conventional electronics.

Tissue-electronics interfaces: from implantable devices to engineered tissues

NASA Astrophysics Data System (ADS)

Feiner, Ron; Dvir, Tal

2018-01-01

Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

Solution processed ZnO hybrid nanocomposite with tailored work function for improved electron transport layer in organic photovoltaic devices.

PubMed

Lee, Yun-Ju; Wang, Jian; Cheng, Samuel R; Hsu, Julia W P

2013-09-25

We demonstrate improved organic photovoltaic device performance using solution processed electron transport layers of ZnO nanoparticle (NP) films containing organic additives, poly(vinylpyrrolidone) (PVP), or diethanolamine (DEA), that do not require post processing after film deposition. Inclusion of PVP or DEA decreased the ZnO work function by 0.4 eV through interfacial dipole formation. While PVP did not change the ZnO NP shape or size, DEA modified the ZnO shape from 5 nm × 15 nm nanorods to 5 nm nanoparticles. At an optimized PVP concentration of 0.7 wt %, ZnO NP:PVP electron transport layers (ETLs) improved the efficiency of inverted P3HT:PCBM devices by 37%, primarily through higher fill factor. ZnO NP:PVP and ZnO NP:DEA ETLs increased the open circuit voltage of inverted P3HT:ICBA devices by 0.07 V due to decreasing ETL work function, leading to enhanced built-in field. The relationship between ZnO nanocomposite ETL work function, donor-acceptor energy offset, and device performance is discussed. The effects of the two additives are compared.

Integrating a Hand Held computer and Stethoscope into a Fetal Monitor

PubMed Central

Ahmad Soltani, Mitra

2009-01-01

This article presents procedures for modifying a hand held computer or personal digital assistant (PDA) into a versatile device functioning as an electronic stethoscope for fetal monitoring. Along with functioning as an electronic stethoscope, a PDA can provide a useful information source for a medical trainee. Feedback from medical students, residents and interns suggests the device is well accepted by medical trainees. PMID:20165517

Simulation of electron transport in quantum well devices

NASA Technical Reports Server (NTRS)

Miller, D. R.; Gullapalli, K. K.; Reddy, V. R.; Neikirk, D. P.

1992-01-01

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Nature-Inspired Structural Materials for Flexible Electronic Devices.

PubMed

Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

2017-10-25

Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

Shape Memory Polymers for Body Motion Energy Harvesting and Self-Powered Mechanosensing.

PubMed

Liu, Ruiyuan; Kuang, Xiao; Deng, Jianan; Wang, Yi-Cheng; Wang, Aurelia C; Ding, Wenbo; Lai, Ying-Chih; Chen, Jun; Wang, Peihong; Lin, Zhiqun; Qi, H Jerry; Sun, Baoquan; Wang, Zhong Lin

2018-02-01

Growing demand in portable electronics raises a requirement to electronic devices being stretchable, deformable, and durable, for which functional polymers are ideal choices of materials. Here, the first transformable smart energy harvester and self-powered mechanosensation sensor using shape memory polymers is demonstrated. The device is based on the mechanism of a flexible triboelectric nanogenerator using the thermally triggered shape transformation of organic materials for effectively harvesting mechanical energy. This work paves a new direction for functional polymers, especially in the field of mechanosensation for potential applications in areas such as soft robotics, biomedical devices, and wearable electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transition metal oxides for organic electronics: energetics, device physics and applications.

PubMed

Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

2012-10-23

During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multifunctional Energy Storage and Conversion Devices.

PubMed

Huang, Yan; Zhu, Minshen; Huang, Yang; Pei, Zengxia; Li, Hongfei; Wang, Zifeng; Xue, Qi; Zhi, Chunyi

2016-10-01

Multifunctional energy storage and conversion devices that incorporate novel features and functions in intelligent and interactive modes, represent a radical advance in consumer products, such as wearable electronics, healthcare devices, artificial intelligence, electric vehicles, smart household, and space satellites, etc. Here, smart energy devices are defined to be energy devices that are responsive to changes in configurational integrity, voltage, mechanical deformation, light, and temperature, called self-healability, electrochromism, shape memory, photodetection, and thermal responsivity. Advisable materials, device designs, and performances are crucial for the development of energy electronics endowed with these smart functions. Integrating these smart functions in energy storage and conversion devices gives rise to great challenges from the viewpoint of both understanding the fundamental mechanisms and practical implementation. Current state-of-art examples of these smart multifunctional energy devices, pertinent to materials, fabrication strategies, and performances, are highlighted. In addition, current challenges and potential solutions from materials synthesis to device performances are discussed. Finally, some important directions in this fast developing field are considered to further expand their application. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laplace-Pressure Actuation of Liquid Metal Devices For Reconfigurable Electromagnetics

NASA Astrophysics Data System (ADS)

Cumby, Brad Lee

Present day electronics are now taking on small form factors, unexpected uses, adaptability, and other features that only a decade ago were unimaginable even for most engineers. These electronic devices, such as tablets, smart phones, wearable sensors, and others, have further had a profound impact on how society interacts, works, maintains health, etc. To optimize electronics a growing trend has been to both minimize the physical space taken up by the individual electronic components as well as to maximize the number of functionalities in a single electronic device, forming a compact and efficient package. To accomplish this challenge in one step, many groups have used a design that has reconfigurable electromagnetic properties, maximizing the functionality density of the device. This would allow the replacement of multiple individual components into an integrated system that would achieve a similar result as the separate individual devices while taking up less space. For example, could a device have a reconfigurable antenna, allowing it optimal communication in various settings and across multiple communication bands, thus increasing functionality, range, and even reducing total device size. Thus far a majority of such reconfigurable devices involve connecting/disconnecting various physically static layouts to achieve a summation of individual components that give rise to multiple effects. However, this is not an ideal situation due to the fact that the individual components whether connected or not are taking up real-estate as well as electrical interference with adjacent connected components. This dissertation focuses on the reconfigurability of the metallic component of the electronic device, specifically microwave devices. This component used throughout this dissertation is that of an eutectic liquid metal alloy. The liquid metal allows the utilization of both the inherent compact form (spherical shape) of a liquid in the lowest energy state and the fact that it is resilient and shapeable to allow for reconfigurability. In this dissertation, first background information is given on the existing technology for reconfigurable microwave devices and the basic principles that these mechanisms are based upon. Then a new reconfigurable method is introduced that utilizes Laplace pressure. Materials that are associated with using liquid metals are discussed and an overall systematic view is given to provide a set of proof of concepts that are more applied and understandable by electronic designers and engineers. Finally a novel approach to making essential measurements of liquid metal microwave devices is devised and discussed. This dissertation encompasses a complete device design from materials used for fabrication, fabrication methods and measurement processes to provide a knowledge base for designing liquid metal microwave devices.

"Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

PubMed

Irimia-Vladu, Mihai

2014-01-21

"Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

PubMed Central

Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

2016-01-01

Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for ‘stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces. PMID:27248982

Electronic materials testing in commercial aircraft engines

NASA Astrophysics Data System (ADS)

Brand, Dieter

A device for the electronic testing of materials used in commercial aircraft engines is described. The instrument can be used for ferromagnetic, ferrimagnetic, and nonferromagnetic metallic materials, and it functions either optically or acoustically. The design of the device is described and technical data are given. The device operates under the principle of controlled self-inductivity. Its mode of operation is described.

Issues of nanoelectronics: a possible roadmap.

PubMed

Wang, Kang L

2002-01-01

In this review, we will discuss a possible roadmap in scaling a nanoelectronic device from today's CMOS technology to the ultimate limit when the device fails. In other words, at the limit, CMOS will have a severe short channel effect, significant power dissipation in its quiescent (standby) state, and problems related to other essential characteristics. Efforts to use structures such as the double gate, vertical surround gate, and SOI to improve the gate control have continually been made. Other types of structures using SiGe source/drain, asymmetric Schottky source/drain, and the like will be investigated as viable structures to achieve ultimate CMOS. In reaching its scaling limit, tunneling will be an issue for CMOS. The tunneling current through the gate oxide and between the source and drain will limit the device operation. When tunneling becomes significant, circuits may incorporate tunneling devices with CMOS to further increase the functionality per device count. We will discuss both the top-down and bottom-up approaches in attaining the nanometer scale and eventually the atomic scale. Self-assembly is used as a bottom-up approach. The state of the art is reviewed, and the challenges of the multiple-step processing in using the self-assembly approach are outlined. Another facet of the scaling trend is to decrease the number of electrons in devices, ultimately leading to single electrons. If the size of a single-electron device is scaled in such a way that the Coulomb self-energy is higher than the thermal energy (at room temperature), a single-electron device will be able to operate at room temperature. In principle, the speed of the device will be fast as long as the capacitance of the load is also scaled accordingly. The single-electron device will have a small drive current, and thus the load capacitance, including those of interconnects and fanouts, must be small to achieve a reasonable speed. However, because the increase in the density (and/or functionality) of integrated circuits is the principal driver, the wiring or interconnects will increase and become the bottleneck for the design of future high-density and high-functionality circuits, particularly for single-electron devices. Furthermore, the massive interconnects needed in the architecture used today will result in an increase in load capacitance. Thus for single-electron device circuits, it is critical to have minimal interconnect loads. And new types of architectures with minimal numbers of global interconnects will be needed. Cellular automata, which need only nearest-neighbor interconnects, are discussed as a plausible example. Other architectures such as neural networks are also possible. Examples of signal processing using cellular automata are discussed. Quantum computing and information processing are based on quantum mechanical descriptions of individual particles correlated among each other. A quantum bit or qubit is described as a linear superposition of the wave functions of a two-state system, for example, the spin of a particle. With the interaction of two qubits, they are connected in a "wireless fashion" using wave functions via quantum mechanical interaction, referred to as entanglement. The interconnection by the nonlocality of wave functions affords a massive parallel nature for computing or so-called quantum parallelism. We will describe the potential and solid-state implementations of quantum computing and information, using electron spin and/or nuclear spin in Si and Ge. Group IV elements have a long coherent time and other advantages. The example of using SiGe for g factor engineering will be described.

An ontology-based annotation of cardiac implantable electronic devices to detect therapy changes in a national registry.

PubMed

Rosier, Arnaud; Mabo, Philippe; Chauvin, Michel; Burgun, Anita

2015-05-01

The patient population benefitting from cardiac implantable electronic devices (CIEDs) is increasing. This study introduces a device annotation method that supports the consistent description of the functional attributes of cardiac devices and evaluates how this method can detect device changes from a CIED registry. We designed the Cardiac Device Ontology, an ontology of CIEDs and device functions. We annotated 146 cardiac devices with this ontology and used it to detect therapy changes with respect to atrioventricular pacing, cardiac resynchronization therapy, and defibrillation capability in a French national registry of patients with implants (STIDEFIX). We then analyzed a set of 6905 device replacements from the STIDEFIX registry. Ontology-based identification of therapy changes (upgraded, downgraded, or similar) was accurate (6905 cases) and performed better than straightforward analysis of the registry codes (F-measure 1.00 versus 0.75 to 0.97). This study demonstrates the feasibility and effectiveness of ontology-based functional annotation of devices in the cardiac domain. Such annotation allowed a better description and in-depth analysis of STIDEFIX. This method was useful for the automatic detection of therapy changes and may be reused for analyzing data from other device registries.

Ion plated electronic tube device

DOEpatents

Meek, T.T.

1983-10-18

An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

Self-similar and fractal design for stretchable electronics

DOEpatents

Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

2017-04-04

The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

Electronic plants

PubMed Central

Stavrinidou, Eleni; Gabrielsson, Roger; Gomez, Eliot; Crispin, Xavier; Nilsson, Ove; Simon, Daniel T.; Berggren, Magnus

2015-01-01

The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants’ “circuitry” has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization. PMID:26702448

Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

NASA Astrophysics Data System (ADS)

Enoki, Toshiaki; Kiguchi, Manabu

2018-03-01

Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

dc-plasma-sprayed electronic-tube device

DOEpatents

Meek, T.T.

1982-01-29

An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

Focused-electron-beam-induced processing (FEBIP) for emerging applications in carbon nanoelectronics

NASA Astrophysics Data System (ADS)

Fedorov, Andrei G.; Kim, Songkil; Henry, Mathias; Kulkarni, Dhaval; Tsukruk, Vladimir V.

2014-12-01

Focused-electron-beam-induced processing (FEBIP), a resist-free additive nanomanufacturing technique, is an actively researched method for "direct-write" processing of a wide range of structural and functional nanomaterials, with high degree of spatial and time-domain control. This article attempts to critically assess the FEBIP capabilities and unique value proposition in the context of processing of electronics materials, with a particular emphasis on emerging carbon (i.e., based on graphene and carbon nanotubes) devices and interconnect structures. One of the major hurdles in advancing the carbon-based electronic materials and device fabrication is a disjoint nature of various processing steps involved in making a functional device from the precursor graphene/CNT materials. Not only this multi-step sequence severely limits the throughput and increases the cost, but also dramatically reduces the processing reproducibility and negatively impacts the quality because of possible between-the-step contamination, especially for impurity-susceptible materials such as graphene. The FEBIP provides a unique opportunity to address many challenges of carbon nanoelectronics, especially when it is employed as part of an integrated processing environment based on multiple "beams" of energetic particles, including electrons, photons, and molecules. This avenue is promising from the applications' prospective, as such a multi-functional (electron/photon/molecule beam) enables one to define shapes (patterning), form structures (deposition/etching), and modify (cleaning/doping/annealing) properties with locally resolved control on nanoscale using the same tool without ever changing the processing environment. It thus will have a direct positive impact on enhancing functionality, improving quality and reducing fabrication costs for electronic devices, based on both conventional CMOS and emerging carbon (CNT/graphene) materials.

The switching behaviors induced by torsion angle in a diblock co-oligomer molecule with tailoring graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Yang, Aiyun; Xia, Caijuan; Zhang, Boqun; Wang, Jun; Su, Yaoheng; Tu, Zheyan

2018-02-01

By applying first-principles method based on density functional theory combined with nonequilibrium Green’s function, we investigate the effect of torsion angle on the electronic transport properties in dipyrimidinyl-diphenyl co-oligomer molecular device with tailoring graphene nanoribbon electrodes. The results show that the torsion angle plays an important role on the electronic transport properties of the molecular device. When the torsion angle rotates from 0∘ to 90∘, the molecular devices exhibit very different current-voltage characteristics which can realize the on and off states of the molecular switch.

Electron transport in all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi device, based on ab-initio NEGF calculations

NASA Astrophysics Data System (ADS)

Mikaeilzadeh, L.; Pirgholi, M.; Tavana, A.

2018-05-01

Based on the ab-initio non-equilibrium Green's function (NEGF) formalism based on the density functional theory (DFT), we have studied the electron transport in the all-Heusler device Co2CrSi/Cu2CrAl/Co2CrSi. Results show that the calculated transmission spectra is very sensitive to the structural parameters and the interface. Also, we obtain a range for the thickness of the spacer layer for which the MR effect is optimum. Calculations also show a perfect GMR effect in this device.

The molecular electronic device and the biochip computer: present status.

PubMed

Haddon, R C; Lamola, A A

1985-04-01

The idea that a single molecule might function as a self-contained electronic device has been of interest for some time. However, a fully integrated version--the biochip or the biocomputer, in which both production and assembly of molecular electronic components is achieved through biotechnology-is a relatively new concept that is currently attracting attention both within the scientific community and among the general public. In the present article we draw together some of the approaches being considered for the construction of such devices and delineate the revolutionary nature of the current proposals for molecular electronic devices (MEDs) and biochip computers (BCCs). With the silicon semiconductor conductor industry already in place and in view of the continuing successes of the lithographic process it seems appropriate to ask why the highly speculative MED or BCC has engendered such interest. In some respects the answer is paradigmatic as much as it is real. It is perhaps best stated as the promise of the realm of the molecular. Thus it is envisioned that devices will be constructed by assembly of individual molecular electronic components into arrays, thereby engineering from small upward rather than large downward as do current lithographic techniques. An important corollary of the construction technique is that the functional elements of such an array would be individual molecules rather than macroscopic ensembles. These two aspects of the MED/BCC--assembly of molecular arrays and individually accessible functional molecular units--are truly revolutionary. Both require scientific breakthroughs and the necessary principles, quite apart from the technology, remain essentially unknown. It is concluded that the advent of the MED/BCC still lies well before us. The twin criteria of utilization of individual molecules as functional elements and the assembly of such elements remains as elusive as ever. Biology engineers structures on the molecular scale but biomolecules do not seem to be imbued with useful electronic properties. Molecular beam epitaxy and thin-film techniques produce electronic devices but they "engineer down" and are currently unable to generate individual molecular units. The potential of the MED/BCC field is matched only by the obstacles that must be surmounted for its realization.

The molecular electronic device and the biochip computer: present status.

PubMed Central

Haddon, R C; Lamola, A A

1985-01-01

The idea that a single molecule might function as a self-contained electronic device has been of interest for some time. However, a fully integrated version--the biochip or the biocomputer, in which both production and assembly of molecular electronic components is achieved through biotechnology-is a relatively new concept that is currently attracting attention both within the scientific community and among the general public. In the present article we draw together some of the approaches being considered for the construction of such devices and delineate the revolutionary nature of the current proposals for molecular electronic devices (MEDs) and biochip computers (BCCs). With the silicon semiconductor conductor industry already in place and in view of the continuing successes of the lithographic process it seems appropriate to ask why the highly speculative MED or BCC has engendered such interest. In some respects the answer is paradigmatic as much as it is real. It is perhaps best stated as the promise of the realm of the molecular. Thus it is envisioned that devices will be constructed by assembly of individual molecular electronic components into arrays, thereby engineering from small upward rather than large downward as do current lithographic techniques. An important corollary of the construction technique is that the functional elements of such an array would be individual molecules rather than macroscopic ensembles. These two aspects of the MED/BCC--assembly of molecular arrays and individually accessible functional molecular units--are truly revolutionary. Both require scientific breakthroughs and the necessary principles, quite apart from the technology, remain essentially unknown. It is concluded that the advent of the MED/BCC still lies well before us. The twin criteria of utilization of individual molecules as functional elements and the assembly of such elements remains as elusive as ever. Biology engineers structures on the molecular scale but biomolecules do not seem to be imbued with useful electronic properties. Molecular beam epitaxy and thin-film techniques produce electronic devices but they "engineer down" and are currently unable to generate individual molecular units. The potential of the MED/BCC field is matched only by the obstacles that must be surmounted for its realization. PMID:3856865

Unconventional transport in ultraclean graphene constriction devices

NASA Astrophysics Data System (ADS)

Pita Vidal, Marta; Ma, Qiong; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo

Under mesoscopic conditions, strong electron-electron interactions and weak electron-phonon coupling in graphene lead to hydrodynamic behavior of electrons, resulting in unusual and unexpected transport phenomena. Specifically, this hydrodynamical collective cooperation of electrons is predicted to enhance the flow of electrical current, leading to a striking higher-than-ballistic conductance through a narrow geometrical constriction. To access the hydrodynamic regime, we fabricated high-quality, low-disorder graphene nano-constriction devices encapsulated by hexagonal boron nitride, where electron-electron scattering dominates impurity scattering. We will report on our systematic four-probe conductance measurements on devices with different constriction widths as a function of number density and temperature. The observation of quantum transport phenomena that are inconsistent with the non-interacting ballistic free-fermion model would suggest a macroscopic transport signature of electron viscosity.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A [Champaign, IL; Nuzzo, Ralph G [Champaign, IL; Meitl, Matthew [Raleigh, NC; Ko, Heung Cho [Urbana, IL; Yoon, Jongseung [Urbana, IL; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL

2011-04-26

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew

2016-05-24

Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Challenges and opportunities of ZnO-related single crystalline heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozuka, Y.; Tsukazaki, A.; PRESTO, Japan Science and Technology Agency

2014-03-15

Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg{sub x}Zn{sub 1-x}O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such asmore » a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg{sub x}Zn{sub 1-x}O as intrinsic as possible has opened the possibilities of making p-type Mg{sub x}Zn{sub 1-x}O through NH{sub 3} doping method. For the latter, conducting and transparent polymer films spin-coated on Mg{sub x}Zn{sub 1-x}O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg{sub x}Zn{sub 1-x}O/ZnO interfaces are promising candidate for quantum devices because of high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.« less

New Computational Approach to Electron Transport in Irregular Graphene Nanostructures

NASA Astrophysics Data System (ADS)

Mason, Douglas; Heller, Eric; Prendergast, David; Neaton, Jeffrey

2009-03-01

For novel graphene devices of nanoscale-to-macroscopic scale, many aspects of their transport properties are not easily understood due to difficulties in fabricating devices with regular edges. Here we develop a framework to efficiently calculate and potentially screen electronic transport properties of arbitrary nanoscale graphene device structures. A generalization of the established recursive Green's function method is presented, providing access to arbitrary device and lead geometries with substantial computer-time savings. Using single-orbital nearest-neighbor tight-binding models and the Green's function-Landauer scattering formalism, we will explore the transmission function of irregular two-dimensional graphene-based nanostructures with arbitrary lead orientation. Prepared by LBNL under contract DE-AC02-05CH11231 and supported by the U.S. Dept. of Energy Computer Science Graduate Fellowship under grant DE-FG02-97ER25308.

Fully printable, strain-engineered electronic wrap for customizable soft electronics.

PubMed

Byun, Junghwan; Lee, Byeongmoon; Oh, Eunho; Kim, Hyunjong; Kim, Sangwoo; Lee, Seunghwan; Hong, Yongtaek

2017-03-24

Rapid growth of stretchable electronics stimulates broad uses in multidisciplinary fields as well as industrial applications. However, existing technologies are unsuitable for implementing versatile applications involving adaptable system design and functions in a cost/time-effective way because of vacuum-conditioned, lithographically-predefined processes. Here, we present a methodology for a fully printable, strain-engineered electronic wrap as a universal strategy which makes it more feasible to implement various stretchable electronic systems with customizable layouts and functions. The key aspects involve inkjet-printed rigid island (PRI)-based stretchable platform technology and corresponding printing-based automated electronic functionalization methodology, the combination of which provides fully printed, customized layouts of stretchable electronic systems with simplified process. Specifically, well-controlled contact line pinning effect of printed polymer solution enables the formation of PRIs with tunable thickness; and surface strain analysis on those PRIs leads to the optimized stability and device-to-island fill factor of strain-engineered electronic wraps. Moreover, core techniques of image-based automated pinpointing, surface-mountable device based electronic functionalizing, and one-step interconnection networking of PRIs enable customized circuit design and adaptable functionalities. To exhibit the universality of our approach, multiple types of practical applications ranging from self-computable digital logics to display and sensor system are demonstrated on skin in a customized form.

Fully printable, strain-engineered electronic wrap for customizable soft electronics

NASA Astrophysics Data System (ADS)

Byun, Junghwan; Lee, Byeongmoon; Oh, Eunho; Kim, Hyunjong; Kim, Sangwoo; Lee, Seunghwan; Hong, Yongtaek

2017-03-01

Rapid growth of stretchable electronics stimulates broad uses in multidisciplinary fields as well as industrial applications. However, existing technologies are unsuitable for implementing versatile applications involving adaptable system design and functions in a cost/time-effective way because of vacuum-conditioned, lithographically-predefined processes. Here, we present a methodology for a fully printable, strain-engineered electronic wrap as a universal strategy which makes it more feasible to implement various stretchable electronic systems with customizable layouts and functions. The key aspects involve inkjet-printed rigid island (PRI)-based stretchable platform technology and corresponding printing-based automated electronic functionalization methodology, the combination of which provides fully printed, customized layouts of stretchable electronic systems with simplified process. Specifically, well-controlled contact line pinning effect of printed polymer solution enables the formation of PRIs with tunable thickness; and surface strain analysis on those PRIs leads to the optimized stability and device-to-island fill factor of strain-engineered electronic wraps. Moreover, core techniques of image-based automated pinpointing, surface-mountable device based electronic functionalizing, and one-step interconnection networking of PRIs enable customized circuit design and adaptable functionalities. To exhibit the universality of our approach, multiple types of practical applications ranging from self-computable digital logics to display and sensor system are demonstrated on skin in a customized form.

Fully printable, strain-engineered electronic wrap for customizable soft electronics

PubMed Central

Byun, Junghwan; Lee, Byeongmoon; Oh, Eunho; Kim, Hyunjong; Kim, Sangwoo; Lee, Seunghwan; Hong, Yongtaek

2017-01-01

Rapid growth of stretchable electronics stimulates broad uses in multidisciplinary fields as well as industrial applications. However, existing technologies are unsuitable for implementing versatile applications involving adaptable system design and functions in a cost/time-effective way because of vacuum-conditioned, lithographically-predefined processes. Here, we present a methodology for a fully printable, strain-engineered electronic wrap as a universal strategy which makes it more feasible to implement various stretchable electronic systems with customizable layouts and functions. The key aspects involve inkjet-printed rigid island (PRI)-based stretchable platform technology and corresponding printing-based automated electronic functionalization methodology, the combination of which provides fully printed, customized layouts of stretchable electronic systems with simplified process. Specifically, well-controlled contact line pinning effect of printed polymer solution enables the formation of PRIs with tunable thickness; and surface strain analysis on those PRIs leads to the optimized stability and device-to-island fill factor of strain-engineered electronic wraps. Moreover, core techniques of image-based automated pinpointing, surface-mountable device based electronic functionalizing, and one-step interconnection networking of PRIs enable customized circuit design and adaptable functionalities. To exhibit the universality of our approach, multiple types of practical applications ranging from self-computable digital logics to display and sensor system are demonstrated on skin in a customized form. PMID:28338055

Mouldable all-carbon integrated circuits

NASA Astrophysics Data System (ADS)

Sun, Dong-Ming; Timmermans, Marina Y.; Kaskela, Antti; Nasibulin, Albert G.; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I.; Ohno, Yutaka

2013-08-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027cm2V-1s-1 and an ON/OFF ratio of 105. The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Mouldable all-carbon integrated circuits.

PubMed

Sun, Dong-Ming; Timmermans, Marina Y; Kaskela, Antti; Nasibulin, Albert G; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I; Ohno, Yutaka

2013-01-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027 cm(2) V(-1) s(-1) and an ON/OFF ratio of 10(5). The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Engineered phages for electronics.

PubMed

Cui, Yue

2016-11-15

Phages are traditionally widely studied in biology and chemistry. In recent years, engineered phages have attracted significant attentions for functionalization or construction of electronic devices, due to their specific binding, catalytic, nucleating or electronic properties. To apply the engineered phages in electronics, these are a number of interesting questions: how to engineer phages for electronics? How are the engineered phages characterized? How to assemble materials with engineered phages? How are the engineered phages micro or nanopatterned? What are the strategies to construct electronics devices with engineered phages? This review will highlight the early attempts to address these questions and explore the fundamental and practical aspects of engineered phages in electronics, including the approaches for selection or expression of specific peptides on phage coat proteins, characterization of engineered phages in electronics, assembly of electronic materials, patterning of engineered phages, and construction of electronic devices. It provides the methodologies and opens up ex-cit-ing op-por-tu-ni-ties for the development of a variety of new electronic materials and devices based on engineered phages for future applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Development and application of a 2-electron reduced density matrix approach to electron transport via molecular junctions

NASA Astrophysics Data System (ADS)

Hoy, Erik P.; Mazziotti, David A.; Seideman, Tamar

2017-11-01

Can an electronic device be constructed using only a single molecule? Since this question was first asked by Aviram and Ratner in the 1970s [Chem. Phys. Lett. 29, 277 (1974)], the field of molecular electronics has exploded with significant experimental advancements in the understanding of the charge transport properties of single molecule devices. Efforts to explain the results of these experiments and identify promising new candidate molecules for molecular devices have led to the development of numerous new theoretical methods including the current standard theoretical approach for studying single molecule charge transport, i.e., the non-equilibrium Green's function formalism (NEGF). By pairing this formalism with density functional theory (DFT), a wide variety of transport problems in molecular junctions have been successfully treated. For some systems though, the conductance and current-voltage curves predicted by common DFT functionals can be several orders of magnitude above experimental results. In addition, since density functional theory relies on approximations to the exact exchange-correlation functional, the predicted transport properties can show significant variation depending on the functional chosen. As a first step to addressing this issue, the authors have replaced density functional theory in the NEGF formalism with a 2-electron reduced density matrix (2-RDM) method, creating a new approach known as the NEGF-RDM method. 2-RDM methods provide a more accurate description of electron correlation compared to density functional theory, and they have lower computational scaling compared to wavefunction based methods of similar accuracy. Additionally, 2-RDM methods are capable of capturing static electron correlation which is untreatable by existing NEGF-DFT methods. When studying dithiol alkane chains and dithiol benzene in model junctions, the authors found that the NEGF-RDM predicts conductances and currents that are 1-2 orders of magnitude below those of B3LYP and M06 DFT functionals. This suggests that the NEGF-RDM method could be a viable alternative to NEGF-DFT for molecular junction calculations.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

The first radical-based spintronic memristors: Towards resistive RAMs made of organic magnets

NASA Astrophysics Data System (ADS)

Goss, Karin; Krist, Florian; Seyfferle, Simon; Hoefel, Udo; Paretzki, Alexa; Dressel, Martin; Bogani, Lapo; Institut Fuer Anorganische Chemie, University of Stuttgart Collaboration; 1. Physikalisches Institut, University of Stuttgart Team

2014-03-01

Using molecules as building blocks for electronic devices offers ample possibilities for new device functionalities due to a chemical tunability much higher than that of standard inorganic materials, and at the same time offers a decrease in the size of the electronic component down to the single-molecule level. Purely organic molecules containing no metallic centers such as organic radicals can serve as an electronic component with magnetic properties due to the unpaired electron in the radical state. Here we present memristive logic units based on organic radicals of the nitronyl-nitroxide kind. Integrating these purely molecular units as a spin coated layer into crossbar arrays, electrically induced unipolar resistive switching is observed with a change in resistance of up to 100%. We introduce a model based on filamentary reorganization of molecules of different oxidation state revealing the importance of the molecular nature for the switching properties. The major role of the oxidation state of these paramagnetic molecules introduces a magnetic field dependence to the device functionality, which goes along with magnetoresistive charactistics observed for the material. These are the first steps towards a spintronic implementation of organic radicals in electronic devices.

78 FR 22899 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-17

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having... pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on March 12, 2013...

In vivo polymerization and manufacturing of wires and supercapacitors in plants

PubMed Central

Stavrinidou, Eleni; Nilsson, K. Peter R.; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V.; Jonsson, Magnus P.; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V.; Berggren, Magnus

2017-01-01

Electronic plants, e-Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant’s structure acts as a physical template, whereas the plant’s biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant’s natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor–actuator systems for plant control and optimization. PMID:28242683

In vivo polymerization and manufacturing of wires and supercapacitors in plants.

PubMed

Stavrinidou, Eleni; Gabrielsson, Roger; Nilsson, K Peter R; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V; Jonsson, Magnus P; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V; Simon, Daniel T; Berggren, Magnus

2017-03-14

Electronic plants, e -Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant's structure acts as a physical template, whereas the plant's biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant's natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor-actuator systems for plant control and optimization.

Chemical and charge transfer studies on interfaces of a conjugated polymer and ITO

NASA Astrophysics Data System (ADS)

David, Tanya M. S.; Arasho, Wondwosson; Smith, O'Neil; Hong, Kunlun; Bonner, Carl; Sun, Sam-Shajing

2017-08-01

Conjugated oligomers and polymers are very attractive for potential future plastic electronic and opto-electronic device applications such as plastic photo detectors and solar cells, thermoelectric devices, field effect transistors, and light emitting diodes. Understanding and optimizing charge transport between an active polymer layer and conductive substrate is critical to the optimization of polymer based electronic and opto-electronic devices. This study focused on the design, synthesis, self-assembly, and electron transfers and transports of a phosphonic acid end-functionalized polyphenylenevinylene (PPV) that was covalently attached and self-assembled onto an Indium Tin Oxide (ITO) substrate. This study demonstrated how atomic force microscopy (AFM) can be an effective characterization technique in conjunction with conventional electron transfer methods, including cyclic voltammetry (CV), towards determining electron transfer rates in polymer and polymer/conductor interface systems. This study found that the electron transfer rates of covalently attached and self-assembled films were much faster than the spin coated films. The knowledge from this study can be very useful for designing potential polymer based electronic and opto-electronic thin film devices.

Radiation Effects On Emerging Electronic Materials And Devices

DTIC Science & Technology

2010-01-17

RADIATION EFFECTS ON EMERGING ELECTRONIC MATERIALS AND DEVICES FINAL PERFORMANCE REPORT PREPARED FOR: Kitt Reinhardt AFOSR/NE 875 N...and the other with metal gates and a high-K gate dielectric. These devices were programmed using both back-gate pulse and gate induced drain leakage... metal gate process GIDL method Fig. 1. Sensing margin as a function of total ionizing dose for nMOS 1T-DRAM cells programmed by back-gate pulse and

Organic spintronic devices and methods for making the same

DOEpatents

Vardeny, Zee Valentine; Ndobe, Alex

2014-09-23

An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

Nanocellulose as Material Building Block for Energy and Flexible Electronics

NASA Astrophysics Data System (ADS)

Hu, Liangbing

2014-03-01

In this talk, I will discuss the fabrications, properties and device applications of functional nanostructured paper based on nanocellulose. Nanostructures with tunable optical, electrical, ionic and mechanical properties will be discussed. Lab-scale demonstration devices, including low-cost Na-ion batteries, microbial fuel cells, solar cells, transparent transistors, actuators and touch screens will be briefly mentioned. These studies show that nanocellulose is a promising green material for electronics and energy devices.

Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures.

PubMed

Perumal, Packiyaraj; Karuppiah, Chelladurai; Liao, Wei-Cheng; Liou, Yi-Rou; Liao, Yu-Ming; Chen, Yang-Fang

2017-08-30

Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO 2 /n-MoS 2 /Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW -1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 10 10 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS 2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

Electronic structure of strongly reduced (1 ‾ 1 1) surface of monoclinic HfO2

NASA Astrophysics Data System (ADS)

Cheng, YingXing; Zhu, Linggang; Ying, Yile; Zhou, Jian; Sun, Zhimei

2018-07-01

Material surface is playing an increasingly important role in electronic devices as their size down to nanoscale. Here, by first-principles calculations we studied the surface oxygen-vacancies (Vos) induced electronic-structure variation of HfO2 , in order to explore its potential applications in surface-controlled electronic devices. Firstly, it is found that single Vo tends to segregate onto the surface and attracts each other as they form pairs, making the formation of vacancies-contained functional surface possible. Then extensive Vo-chains whose formation/rupture can represent the high/low conductivity state are constructed. The electronic states induced by the Vos remain localized in the band-gap region for most of the Vo-chains studied here. A transition to a metallic conductance is found in metastable Vo-chain with formation energy increased by 0.25 eV per Vo. Moreover, we highlight the significance of the Hubbard U correction for density functional theory when studying the electronic-structure based conductance in the oxides. By comprehensive calculations, we find a conductivity-stability dilemma of the Vo-chains, providing guideline for understanding and designing the electronic devices based on HfO2 surface.

Nano-fabrication of molecular electronic junctions by targeted modification of metal-molecule bonds

NASA Astrophysics Data System (ADS)

Jafri, S. Hassan M.; Löfås, Henrik; Blom, Tobias; Wallner, Andreas; Grigoriev, Anton; Ahuja, Rajeev; Ottosson, Henrik; Leifer, Klaus

2015-09-01

Reproducibility, stability and the coupling between electrical and molecular properties are central challenges in the field of molecular electronics. The field not only needs devices that fulfill these criteria but they also need to be up-scalable to application size. In this work, few-molecule based electronics devices with reproducible electrical characteristics are demonstrated. Our previously reported 5 nm gold nanoparticles (AuNP) coated with ω-triphenylmethyl (trityl) protected 1,8-octanedithiol molecules are trapped in between sub-20 nm gap spacing gold nanoelectrodes forming AuNP-molecule network. When the trityl groups are removed, reproducible devices and stable Au-thiol junctions are established on both ends of the alkane segment. The resistance of more than 50 devices is reduced by orders of magnitude as well as a reduction of the spread in the resistance histogram is observed. By density functional theory calculations the orders of magnitude decrease in resistance can be explained and supported by TEM observations thus indicating that the resistance changes and strongly improved resistance spread are related to the establishment of reproducible and stable metal-molecule bonds. The same experimental sequence is carried out using 1,6-hexanedithiol functionalized AuNPs. The average resistances as a function of molecular length, demonstrated herein, are comparable to the one found in single molecule devices.

Additive manufacturing of hybrid circuits

DOE PAGES

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam; ...

2016-03-26

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Preface: Special Topic on Frontiers in Molecular Scale Electronics

NASA Astrophysics Data System (ADS)

Evers, Ferdinand; Venkataraman, Latha

2017-03-01

The electronic, mechanical, and thermoelectric properties of molecular scale devices have fascinated scientists across several disciplines in natural sciences and engineering. The interest is partially technological, driven by the fast miniaturization of integrated circuits that now have reached characteristic features at the nanometer scale. Equally important, a very strong incentive also exists to elucidate the fundamental aspects of structure-function relations for nanoscale devices, which utilize molecular building blocks as functional units. Thus motivated, a rich research field has established itself, broadly termed "Molecular Electronics," that hosts a plethora of activities devoted to this goal in chemistry, physics, and electrical engineering. This Special Topic on Frontiers of Molecular Scale Electronics captures recent theoretical and experimental advances in the field.

Five Ways to Hack and Cheat with Bring-Your-Own-Device Electronic Examinations

ERIC Educational Resources Information Center

Dawson, Phillip

2016-01-01

Bring-your-own-device electronic examinations (BYOD e-exams) are a relatively new type of assessment where students sit an in-person exam under invigilated conditions with their own laptop. Special software restricts student access to prohibited computer functions and files, and provides access to any resources or software the examiner approves.…

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Electroactive polymer-based devices for e-textiles in biomedicine.

PubMed

Carpi, Federico; De Rossi, Danilo

2005-09-01

This paper describes the early conception and latest developments of electroactive polymer (EAP)-based sensors, actuators, electronic components, and power sources, implemented as wearable devices for smart electronic textiles (e-textiles). Such textiles, functioning as multifunctional wearable human interfaces, are today considered relevant promoters of progress and useful tools in several biomedical fields, such as biomonitoring, rehabilitation, and telemedicine. After a brief outline on ongoing research and the first products on e-textiles under commercial development, this paper presents the most highly performing EAP-based devices developed by our lab and other research groups for sensing, actuation, electronics, and energy generation/storage, with reference to their already demonstrated or potential applicability to electronic textiles.

Comparison between a disposable and an electronic PCA device for labor epidural analgesia.

PubMed

Sumikura, Hiroyuki; van de Velde, Marc; Tateda, Takeshi

2004-01-01

The aims of the present study were (1) to investigate if a disposable patient-controlled analgesia (PCA) device can be used for labor analgesia and (2) to evaluate the device by midwives and parturients. Forty healthy parturients were divided into two groups and received combined spinal epidural analgesia for labor pain relief. Following intrathecal administration of 3 mg ropivacaine and 1.5 microg sufentanil, either a disposable PCA device (Coopdech Syrinjector; Daiken Medical, Osaka, Japan) or an electronic PCA device (IVAC PCAM PCA Syringe Pump; Alaris, Basingstoke, UK) was connected to the epidural catheter, and 0.15% ropivacaine with sufentanil 0.75 microg/ml was used for continuous infusion and PCA. For an electronic PCA device, continuous infusion rate, bolus dose, lockout time, and hourly limit were set at 4 ml/h, 3 ml, 15 min, and 16 ml, respectively. For a disposable PCA device, continuous infusion rate, bolus dose, and an hourly limit were set at 4 ml/h, 3 ml, and 16 ml, respectively, but lockout function was not available. No differences were observed between the groups concerning demographic data, obstetric data, and outcome of labor. Anesthetic requirements (disposable, 9.7 +/- 4.7 ml/h; electronic, 8.2 +/- 4.0 ml/h) and VAS score during the delivery (disposable, 26 +/- 25; electronic, 21 +/- 22) were similar between the groups. Midwives praised the disposable PCA device as well as the electronic one. The present results imply that the disposable PCA device can be an alternative to the electronic PCA device for labor analgesia.

Spin injection and transport in semiconductor and metal nanostructures

NASA Astrophysics Data System (ADS)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes directly to the realization of spin valve and spin transistor devices based on III-V semiconductors, and offers new opportunities to engineer the behavior of spintronic devices at the nanoscale.

Electronic system for high power load control. [solar arrays

NASA Technical Reports Server (NTRS)

Miller, E. L. (Inventor)

1980-01-01

Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control devices of the second group are turned fully on, a short circuit is achieved by the arrangement of parallel current paths. Separate but coordinated control signals are provided to turn on the control devices of the first group and increase their conduction toward saturation as a function of control input, and when fully on, or shortly before, to turn on the control devices of the second group and increase their conduction toward saturation as a function of the control input as that input continues to increase. Electronic means may be used to generate signals. The system may be used for 1-V characteristic measurements of solar arrays as well as for other load control purposes.

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

PubMed

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Non-equilibrium tunneling in zigzag graphene nanoribbon break-junction results in spin filtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010; National ICT Australia, The University of Melbourne, Parkville 3010

Spintronic devices promise new faster and lower energy-consumption electronic systems. Graphene, a versatile material and candidate for next generation electronics, is known to possess interesting spintronic properties. In this paper, by utilizing density functional theory and non-equilibrium green function formalism, we show that Fano resonance can be generated by introducing a break junction in a zigzag graphene nanoribbon (ZGNR). Using this effect, we propose a new spin filtering device that can be used for spin injection. Our theoretical results indicate that the proposed device could achieve high spin filtering efficiency (over 90%) at practical fabrication geometries. Furthermore, our results indicatemore » that the ZGNR break junction lattice configuration can dramatically affect spin filtering efficiency and thus needs to be considered when fabricating real devices. Our device can be fabricated on top of spin transport channel and provides good integration between spin injection and spin transport.« less

Advanced understanding on electronic structure of molecular semiconductors and their interfaces

NASA Astrophysics Data System (ADS)

Akaike, Kouki

2018-03-01

Understanding the electronic structure of organic semiconductors and their interfaces is critical to optimizing functionalities for electronics applications, by rational chemical design and appropriate combination of device constituents. The unique electronic structure of a molecular solid is characterized as (i) anisotropic electrostatic fields that originate from molecular quadrupoles, (ii) interfacial energy-level lineup governed by simple electrostatics, and (iii) weak intermolecular interactions that make not only structural order but also energy distributions of the frontier orbitals sensitive to atmosphere and interface growth. This article shows an overview on these features with reference to the improved understanding of the orientation-dependent electronic structure, comprehensive mechanisms of molecular doping, and energy-level alignment. Furthermore, the engineering of ionization energy by the control of the electrostatic fields and work function of practical electrodes by contact-induced doping is briefly described for the purpose of highlighting how the electronic structure impacts the performance of organic devices.

Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

NASA Astrophysics Data System (ADS)

Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

2012-01-01

Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Effect of interfaces on electron transport properties of MoS2-Au Contacts

NASA Astrophysics Data System (ADS)

Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

2014-03-01

Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

Thermal Spray Applications in Electronics and Sensors: Past, Present, and Future

NASA Astrophysics Data System (ADS)

Sampath, Sanjay

2010-09-01

Thermal spray has enjoyed unprecedented growth and has emerged as an innovative and multifaceted deposition technology. Thermal spray coatings are crucial to the enhanced utilization of various engineering systems. Industries, in recognition of thermal spray's versatility and economics, have introduced it into manufacturing environments. The majority of modern thermal spray applications are "passive" protective coatings, and they rarely perform an electronic function. The ability to consolidate dissimilar material multilayers without substrate thermal loading has long been considered a virtue for thick-film electronics. However, the complexity of understanding/controlling materials functions especially those resulting from rapid solidification and layered assemblage has stymied expansion into electronics. That situation is changing: enhancements in process/material science are allowing reconsideration for novel electronic/sensor devices. This review critically examines past efforts in terms of materials functionality from a device perspective, along with ongoing/future concepts addressing the aforementioned deficiencies. The analysis points to intriguing future possibilities for thermal spray technology in the world of thick-film sensors.

Controlled chain polymerisation and chemical soldering for single-molecule electronics.

PubMed

Okawa, Yuji; Akai-Kasaya, Megumi; Kuwahara, Yuji; Mandal, Swapan K; Aono, Masakazu

2012-05-21

Single functional molecules offer great potential for the development of novel nanoelectronic devices with capabilities beyond today's silicon-based devices. To realise single-molecule electronics, the development of a viable method for connecting functional molecules to each other using single conductive polymer chains is required. The method of initiating chain polymerisation using the tip of a scanning tunnelling microscope (STM) is very useful for fabricating single conductive polymer chains at designated positions and thereby wiring single molecules. In this feature article, developments in the controlled chain polymerisation of diacetylene compounds and the properties of polydiacetylene chains are summarised. Recent studies of "chemical soldering", a technique enabling the covalent connection of single polydiacetylene chains to single functional molecules, are also introduced. This represents a key step in advancing the development of single-molecule electronics.

Shapeable magnetoelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makarov, Denys, E-mail: d.makarov@hzdr.de, E-mail: m.melzer@ifw-dresden.de; Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden; Melzer, Michael, E-mail: d.makarov@hzdr.de, E-mail: m.melzer@ifw-dresden.de

Inorganic nanomembranes are shapeable (flexible, printable, and even stretchable) and transferrable to virtually any substrate. These properties build the core concept for new technologies, which transform otherwise rigid high-speed devices into their shapeable counterparts. This research is motivated by the eagerness of consumer electronics towards being thin, lightweight, flexible, and even wearable. The realization of this concept requires all building blocks as we know them from rigid electronics (e.g., active elements, optoelectronics, magnetoelectronics, and energy storage) to be replicated in the form of (multi)functional nanomembranes, which can be reshaped on demand after fabrication. There are already a variety of shapeablemore » devices commercially available, i.e., electronic displays, energy storage elements, and integrated circuitry, to name a few. From the beginning, the main focus was on the fabrication of shapeable high-speed electronics and optoelectronics. Only very recently, a new member featuring magnetic functionalities was added to the family of shapeable electronics. With their unique mechanical properties, the shapeable magnetic field sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of shapeable magnetoelectronics are proposed. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking, and touchless control capabilities. A variety of novel technologies, such as smart textiles, soft robotics and actuators, active medical implants, and soft consumer electronics, will benefit from these new magnetic functionalities. This review reflects the establishment of shapeable magnetic sensorics, describing the entire development from the first attempts to verify the functional concept to the realization of ready-to-use highly compliant and strain invariant sensor devices with remarkable robustness.« less

Shapeable magnetoelectronics

NASA Astrophysics Data System (ADS)

Makarov, Denys; Melzer, Michael; Karnaushenko, Daniil; Schmidt, Oliver G.

2016-03-01

Inorganic nanomembranes are shapeable (flexible, printable, and even stretchable) and transferrable to virtually any substrate. These properties build the core concept for new technologies, which transform otherwise rigid high-speed devices into their shapeable counterparts. This research is motivated by the eagerness of consumer electronics towards being thin, lightweight, flexible, and even wearable. The realization of this concept requires all building blocks as we know them from rigid electronics (e.g., active elements, optoelectronics, magnetoelectronics, and energy storage) to be replicated in the form of (multi)functional nanomembranes, which can be reshaped on demand after fabrication. There are already a variety of shapeable devices commercially available, i.e., electronic displays, energy storage elements, and integrated circuitry, to name a few. From the beginning, the main focus was on the fabrication of shapeable high-speed electronics and optoelectronics. Only very recently, a new member featuring magnetic functionalities was added to the family of shapeable electronics. With their unique mechanical properties, the shapeable magnetic field sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of shapeable magnetoelectronics are proposed. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking, and touchless control capabilities. A variety of novel technologies, such as smart textiles, soft robotics and actuators, active medical implants, and soft consumer electronics, will benefit from these new magnetic functionalities. This review reflects the establishment of shapeable magnetic sensorics, describing the entire development from the first attempts to verify the functional concept to the realization of ready-to-use highly compliant and strain invariant sensor devices with remarkable robustness.

Towards seamlessly-integrated textile electronics: methods to coat fabrics and fibers with conducting polymers for electronic applications.

PubMed

Allison, Linden; Hoxie, Steven; Andrew, Trisha L

2017-06-29

Traditional textile materials can be transformed into functional electronic components upon being dyed or coated with films of intrinsically conducting polymers, such as poly(aniline), poly(pyrrole) and poly(3,4-ethylenedioxythiophene). A variety of textile electronic devices are built from the conductive fibers and fabrics thus obtained, including: physiochemical sensors, thermoelectric fibers/fabrics, heated garments, artificial muscles and textile supercapacitors. In all these cases, electrical performance and device ruggedness is determined by the morphology of the conducting polymer active layer on the fiber or fabric substrate. Tremendous variation in active layer morphology can be observed with different coating or dyeing conditions. Here, we summarize various methods used to create fiber- and fabric-based devices and highlight the influence of the coating method on active layer morphology and device stability.

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

NASA Astrophysics Data System (ADS)

Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

2016-11-01

The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.

2018-05-01

This special issue is devoted to selected papers presented at the EuroSOI-ULIS2017 international conference, held in Athens on 3-5 April 2017. EuroSOI-ULIS2017 Conference was mainly devoted to Si devices, which constitute the basic building blocks of any microelectronic circuit. It included papers on advanced Si technologies, novel nanoscale devices, advanced electronic materials and device architectures, mechanisms involved, test structures, substrate materials and technologies, modeling/simulation and characterization. Both CMOS and beyond CMOS devices were presented, covering the More Moore domain, as well as new functionalities in silicon-compatible nanostructures and innovative devices, representing the More than Moore domain (on-chip sensors, biosensors, energy harvesting devices, RF passives, etc.).

PLASMA DEVICE

DOEpatents

Gow, J.D.; Wilcox, J.M.

1961-12-26

A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

High performance flexible electronics for biomedical devices.

PubMed

Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

2014-01-01

Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

Interplay Between Electron-Electron, Electron-Impurity and Electron-Boundary Scattering in a Two Dimensional Electron Gas (2DEG)

NASA Astrophysics Data System (ADS)

Abraham, Mathew C.; Ram, Rajeev J.; Gossard, A. C.

2003-03-01

A small group of experiments have been conducted over the past decade that explore the fact that even though electron-electron (e-e) scattering in a 2DEG is momentum conserving, its interplay with electron-impurity (e-i)and electron-boundary (e-b) scattering can change the resistance of bulk and mesoscopic devices respectively. The interplay between e-e and e-i scattering in a bulk sample has been shown to cause a fall in the resistivity as a function of electron temperature in the regime where the scattering length l_ee > l_ei and a rise when l_ee < l_ei. In contrast, the interplay between e-e and e-b scattering has been demonstrated to raise the resistivity of a mesoscopic sized wire as a function of electron temperature in the regime l_ee > lb and a fall when l_ee < l_b. We attempt to present a comprehensive picture of these two apparently competing effects by studying devices that are affected by both phenomena simultaneously.

Multi-channel electronically scanned cryogenic pressure sensor

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Kruse, Nancy M. H. (Inventor)

1995-01-01

A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multielement array. These dies are bonded at specific sites on a glass, prepatterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

First-principles investigation on switching properties of spiropyran and merocyanine grafted graphyne nanotube device

NASA Astrophysics Data System (ADS)

Bhuvaneswari, R.; Nagarajan, V.; Chandiramouli, R.

2018-01-01

The density functional theory (DFT) method with non-equilibrium Green's function (NEGF) method is used to study the electronic properties of the graphyne nanotube device. The graphyne nanotube is used as a base material to graft photochromic spiropyran and merocyanine molecules. The current voltage characteristics clearly give the insights on the switching properties of spiropyran and merocyanine grafted graphyne device. The findings show that spiropyran grafted graphyne device as ON state and merocyanine grafted graphyne device as an OFF state device. Moreover, upon shining light of proper wavelength, the spiropyran/merocyanine grafted graphyne nanotube device can be used as a switch.

Enlarging photovoltaic effect: combination of classic photoelectric and ferroelectric photovoltaic effects.

PubMed

Zhang, Jingjiao; Su, Xiaodong; Shen, Mingrong; Dai, Zhihua; Zhang, Lingjun; He, Xiyun; Cheng, Wenxiu; Cao, Mengyu; Zou, Guifu

2013-01-01

Converting light energy to electrical energy in photovoltaic devices relies on the photogenerated electrons and holes separated by the built-in potential in semiconductors. Photo-excited electrons in metal electrodes are usually not considered in this process. Here, we report an enhanced photovoltaic effect in the ferroelectric lanthanum-modified lead zirconate titanate (PLZT) by using low work function metals as the electrodes. We believe that electrons in the metal with low work function could be photo-emitted into PLZT and form the dominant photocurrent in our devices. Under AM1.5 (100 mW/cm²) illumination, the short-circuit current and open-circuit voltage of Mg/PLZT/ITO are about 150 and 2 times of those of Pt/PLZT/ITO, respectively. The photovoltaic response of PLZT capacitor was expanded from ultraviolet to visible spectra, and it may have important impact on design and fabrication of high performance photovoltaic devices based on ferroelectric materials.

On-Chip Electrolytic Chemistry for the Tuning of Graphene Devices

NASA Astrophysics Data System (ADS)

Schmucker, Scott; Ruppalt, Laura; Culbertson, James; Do, Jae Won; Lyding, Joseph; Robinson, Jeremy; Cress, Cory

2015-03-01

The inherent interfacial nature of two-dimensional materials has motivated the tuning of these films by choice of substrate or chemical functionalization. Such parameters are generally selected during fabrication, and therefore remain static during device operation. However, the possibility of dynamic chemistry in a tunable solid-state system will enable the development of new devices which fully leverage the rich chemistry of graphenic materials. Here, we fabricate a novel device for localized, dynamic doping and functionalization of graphene that is compatible with CMOS processing. The device is enabled by a top-gated, solid electrochemical cell designed with calcium fluoride (CaF2) substituting the oxide of a traditional MOSFET. When the CaF2 is gated, F flows from cathode to anode, segregating Ca and F. In this work, one electrode is graphene. When saturated with fluorine, graphene undergoes covalent modification, becoming a wide-bandgap semiconductor. In contrast, when functionalized with calcium or dilute fluorine, graphene is electron or hole doped, respectively. With transport, Raman, and XPS, we demonstrate this lithographically localized and reversible modulation of graphene's electronic and chemical character.

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

PubMed Central

Hosono, Hideo; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

2017-01-01

Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. PMID:28028243

Exact Thermal Transport Properties of Gray-Arsenic using Electon-Phonon Coupling

NASA Astrophysics Data System (ADS)

Kang, Seoung-Hun; Kwon, Young-Kyun

Using various theoretical methods, we investigate the thermoelectric property of gray arsenic. Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy. The conversion efficiency of such a device is determined by its figure of merit or ZT value, which is related to various transport coefficients, such as Seebeck coefficient and the ratio of its electrical conductivity to its thermal counterpart for given temperature. To calculate various transport coefficients and thus the ZT values of gray arsenic, we apply the Boltzmann transport theory to its electronic and phononic structures obtained by density functional theory and density functional perturbation theory together with maximally locallized Wannier functions. During this procedure, we evaluate its relaxation time accurately by explicitly considering electron-phonon coupling. Our result reveals that gray arsenic may be used for a good p-type thermoelectric devices.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Soft bioelectronics using nanomaterials

NASA Astrophysics Data System (ADS)

Lee, Hyunjae; Kim, Dae-Hyeong

2016-09-01

Recently, soft bioelectronics has attracted significant attention because of its potential applications in biointegrated healthcare devices and minimally invasive surgical tools. Mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs, however, causes many challenges in materials and device designs of bio-integrated devices. Intrinsically soft hybrid materials comprising twodimensional nanomaterials are utilized to solve these issues. In this paper, we describe soft bioelectronic devices based on graphene synthesized by a chemical vapor deposition process. These devices have unique advantages over rigid electronics, particularly in biomedical applications. The functionalized graphene is hybridized with other nanomaterials and fabricated into high-performance sensors and actuators toward wearable and minimally invasive healthcare devices. Integrated bioelectronic systems constructed using these devices solve pending issues in clinical medicine while providing new opportunities in personalized healthcare.

Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

NASA Astrophysics Data System (ADS)

Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

2016-03-01

Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems.

Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

2014-12-01

Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

Nano-fabrication of molecular electronic junctions by targeted modification of metal-molecule bonds

PubMed Central

Jafri, S. Hassan M.; Löfås, Henrik; Blom, Tobias; Wallner, Andreas; Grigoriev, Anton; Ahuja, Rajeev; Ottosson, Henrik; Leifer, Klaus

2015-01-01

Reproducibility, stability and the coupling between electrical and molecular properties are central challenges in the field of molecular electronics. The field not only needs devices that fulfill these criteria but they also need to be up-scalable to application size. In this work, few-molecule based electronics devices with reproducible electrical characteristics are demonstrated. Our previously reported 5 nm gold nanoparticles (AuNP) coated with ω-triphenylmethyl (trityl) protected 1,8-octanedithiol molecules are trapped in between sub-20 nm gap spacing gold nanoelectrodes forming AuNP-molecule network. When the trityl groups are removed, reproducible devices and stable Au-thiol junctions are established on both ends of the alkane segment. The resistance of more than 50 devices is reduced by orders of magnitude as well as a reduction of the spread in the resistance histogram is observed. By density functional theory calculations the orders of magnitude decrease in resistance can be explained and supported by TEM observations thus indicating that the resistance changes and strongly improved resistance spread are related to the establishment of reproducible and stable metal-molecule bonds. The same experimental sequence is carried out using 1,6-hexanedithiol functionalized AuNPs. The average resistances as a function of molecular length, demonstrated herein, are comparable to the one found in single molecule devices. PMID:26395225

A systematic review of portable electronic technology for health education in resource-limited settings.

PubMed

McHenry, Megan S; Fischer, Lydia J; Chun, Yeona; Vreeman, Rachel C

2017-08-01

The objective of this study is to conduct a systematic review of the literature of how portable electronic technologies with offline functionality are perceived and used to provide health education in resource-limited settings. Three reviewers evaluated articles and performed a bibliography search to identify studies describing health education delivered by portable electronic device with offline functionality in low- or middle-income countries. Data extracted included: study population; study design and type of analysis; type of technology used; method of use; setting of technology use; impact on caregivers, patients, or overall health outcomes; and reported limitations. Searches yielded 5514 unique titles. Out of 75 critically reviewed full-text articles, 10 met inclusion criteria. Study locations included Botswana, Peru, Kenya, Thailand, Nigeria, India, Ghana, and Tanzania. Topics addressed included: development of healthcare worker training modules, clinical decision support tools, patient education tools, perceptions and usability of portable electronic technology, and comparisons of technologies and/or mobile applications. Studies primarily looked at the assessment of developed educational modules on trainee health knowledge, perceptions and usability of technology, and comparisons of technologies. Overall, studies reported positive results for portable electronic device-based health education, frequently reporting increased provider/patient knowledge, improved patient outcomes in both quality of care and management, increased provider comfort level with technology, and an environment characterized by increased levels of technology-based, informal learning situations. Negative assessments included high investment costs, lack of technical support, and fear of device theft. While the research is limited, portable electronic educational resources present promising avenues to increase access to effective health education in resource-limited settings, contingent on the development of culturally adapted and functional materials to be used on such devices.

Developing the Surface Chemistry of Transparent Butyl Rubber for Impermeable Stretchable Electronics.

PubMed

Vohra, Akhil; Carmichael, R Stephen; Carmichael, Tricia Breen

2016-10-11

Transparent butyl rubber is a new elastomer that has the potential to revolutionize stretchable electronics due to its intrinsically low gas permeability. Encapsulating organic electronic materials and devices with transparent butyl rubber protects them from problematic degradation due to oxygen and moisture, preventing premature device failure and enabling the fabrication of stretchable organic electronic devices with practical lifetimes. Here, we report a methodology to alter the surface chemistry of transparent butyl rubber to advance this material from acting as a simple device encapsulant to functioning as a substrate primed for direct device fabrication on its surface. We demonstrate a combination of plasma and chemical treatment to deposit a hydrophilic silicate layer on the transparent butyl rubber surface to create a new layered composite that combines Si-OH surface chemistry with the favorable gas-barrier properties of bulk transparent butyl rubber. We demonstrate that these surface Si-OH groups react with organosilanes to form self-assembled monolayers necessary for the deposition of electronic materials, and furthermore demonstrate the fabrication of stretchable gold wires using nanotransfer printing of gold films onto transparent butyl rubber modified with a thiol-terminated self-assembled monolayer. The surface modification of transparent butyl rubber establishes this material as an important new elastomer for stretchable electronics and opens the way to robust, stretchable devices.

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

NASA Astrophysics Data System (ADS)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

e-Biologics: Fabrication of Sustainable Electronics with "Green" Biological Materials.

PubMed

Lovley, Derek R

2017-06-27

The growing ubiquity of electronic devices is increasingly consuming substantial energy and rare resources for materials fabrication, as well as creating expansive volumes of toxic waste. This is not sustainable. Electronic biological materials (e-biologics) that are produced with microbes, or designed with microbial components as the guide for synthesis, are a potential green solution. Some e-biologics can be fabricated from renewable feedstocks with relatively low energy inputs, often while avoiding the harsh chemicals used for synthesizing more traditional electronic materials. Several are completely free of toxic components, can be readily recycled, and offer unique features not found in traditional electronic materials in terms of size, performance, and opportunities for diverse functionalization. An appropriate investment in the concerted multidisciplinary collaborative research required to identify and characterize e-biologics and to engineer materials and devices based on e-biologics could be rewarded with a new "green age" of sustainable electronic materials and devices. Copyright © 2017 Lovley.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

NASA Astrophysics Data System (ADS)

Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

2017-02-01

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Dithiocarbamate Self-Assembled Monolayers as Efficient Surface Modifiers for Low Work Function Noble Metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, Dominik; Schäfer, Tobias; Schulz, Philip

2016-09-06

Tuning the work function of the electrode is one of the crucial steps to improve charge extraction in organic electronic devices. Here, we show that N,N-dialkyl dithiocarbamates (DTC) can be effectively employed to produce low work function noble metal electrodes. Work functions between 3.1 and 3.5 eV are observed for all metals investigated (Cu, Ag, and Au). Ultraviolet photoemission spectroscopy (UPS) reveals a maximum decrease in work function by 2.1 eV as compared to the bare metal surface. Electronic structure calculations elucidate how the complex interplay between intrinsic dipoles and dipoles induced by bond formation generates such large work functionmore » shifts. Subsequently, we quantify the improvement in contact resistance of organic thin film transistor devices with DTC coated source and drain electrodes. These findings demonstrate that DTC molecules can be employed as universal surface modifiers to produce stable electrodes for electron injection in high performance hybrid organic optoelectronics.« less

Multi-Channel Electronically Scanned Cryogenic Pressure Sensor And Method For Making Same

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Holloway, Nancy M. (Inventor)

2001-01-01

A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multi-element array. These dies are bonded at specific sites on a glass, pre-patterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

49 CFR 232.613 - End-of-train devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

..., DEPARTMENT OF TRANSPORTATION BRAKE SYSTEM SAFETY STANDARDS FOR FREIGHT AND OTHER NON-PASSENGER TRAINS AND EQUIPMENT; END-OF-TRAIN DEVICES Electronically Controlled Pneumatic (ECP) Braking Systems § 232.613 End-of... equipped with an ECP brake system unless that train is equipped with a functioning ECP-EOT device designed...

Spin orbit torque based electronic neuron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sengupta, Abhronil, E-mail: asengup@purdue.edu; Choday, Sri Harsha; Kim, Yusung

2015-04-06

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis, i.e., an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of themore » neuron input and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward artificial neural network based on the SOT electronic neuron shows that it consumes ∼3× lower power than a 45 nm digital CMOS implementation, while reaching ∼80% accuracy in the classification of 100 images of handwritten digits from the MNIST dataset.« less

Imaging interfacial electrical transport in graphene–MoS{sub 2} heterostructures with electron-beam-induced-currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, E. R., E-mail: ewhite@physics.ucla.edu; Kerelsky, Alexander; Hubbard, William A.

2015-11-30

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS{sub 2} heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrentmore » collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.« less

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics.

PubMed

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-16

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

NASA Astrophysics Data System (ADS)

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

PubMed Central

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-01-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications. PMID:28508862

Toward control of the metal-organic interfacial electronic structure in molecular electronics: a first-principles study on self-assembled monolayers of pi-conjugated molecules on noble metals.

PubMed

Heimel, Georg; Romaner, Lorenz; Zojer, Egbert; Brédas, Jean-Luc

2007-04-01

Self-assembled monolayers (SAMs) of organic molecules provide an important tool to tune the work function of electrodes in plastic electronics and significantly improve device performance. Also, the energetic alignment of the frontier molecular orbitals in the SAM with the Fermi energy of a metal electrode dominates charge transport in single-molecule devices. On the basis of first-principles calculations on SAMs of pi-conjugated molecules on noble metals, we provide a detailed description of the mechanisms that give rise to and intrinsically link these interfacial phenomena at the atomic level. The docking chemistry on the metal side of the SAM determines the level alignment, while chemical modifications on the far side provide an additional, independent handle to modify the substrate work function; both aspects can be tuned over several eV. The comprehensive picture established in this work provides valuable guidelines for controlling charge-carrier injection in organic electronics and current-voltage characteristics in single-molecule devices.

Electron transport in doped fullerene molecular junctions

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device

NASA Astrophysics Data System (ADS)

Zhou, Yuhong; Qiu, Nianxiang; Li, Runwei; Guo, Zhansheng; Zhang, Jian; Fang, Junfeng; Huang, Aisheng; He, Jian; Zha, Xianhu; Luo, Kan; Yin, Jingshuo; Li, Qiuwu; Bai, Xiaojing; Huang, Qing; Du, Shiyu

2016-03-01

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device.

Digital mobile telephones and interference of ophthalmic equipment.

PubMed

Ang, G S; Lian, P; Ng, W S; Whyte, I; Ong, J M

2007-01-01

To assess the effect of mobile telephone electromagnetic interference on electronic ophthalmic equipment. Prospective audit with mobile telephones placed at distances of 3 m, 1 m, and 30 cm from, and in contact with, electronic ophthalmic equipment. Any interruption or cessation of the function of the ophthalmic device was assessed with the mobile telephones in standby, and in dialling or receiving modes. Any alterations of displayed digital figures or numbers were also assessed. A total of 23 electronic ophthalmic devices in two hospital ophthalmology outpatient departments were evaluated. All six mobile telephones used, and 22 (95.7%) of the 23 ophthalmic equipment evaluated had the Conformité Européene (CE) mark. No device showed any interruption or cessation of function. There were no alterations of displayed digital figures or numbers. The only effect of any kind was found with four instruments (1 non-CE marked), where there was temporary flickering on the screen, and only occurred when the mobile telephones were dialling or receiving at a distance of 30 cm or less from the instruments. This study shows that among the electronic ophthalmic devices tested, none suffered failure or interruption of function, from mobile telephone interference. Although not comprehensive for all ophthalmic equipment, the results question the need for a complete ban of mobile telephones in ophthalmic departments. It highlights the need for a controlled, objectively measured study of the clinically relevant effects of mobile telephones in the ophthalmology outpatient setting.

Multi-scale predictive modeling of nano-material and realistic electron devices

NASA Astrophysics Data System (ADS)

Palaria, Amritanshu

Among the challenges faced in further miniaturization of electronic devices, heavy influence of the detailed atomic configuration of the material(s) involved, which often differs significantly from that of the bulk material(s), is prominent. Device design has therefore become highly interrelated with material engineering at the atomic level. This thesis aims at outlining, with examples, a multi-scale simulation procedure that allows one to integrate material and device aspects of nano-electronic design to predict behavior of novel devices with novel material. This is followed in four parts: (1) An approach that combines a higher time scale reactive force field analysis with density functional theory to predict structure of new material is demonstrated for the first time for nanowires. Novel stable structures for very small diameter silicon nanowires are predicted. (2) Density functional theory is used to show that the new nanowire structures derived in 1 above have properties different from diamond core wires even though the surface bonds in some may be similar to the surface of bulk silicon. (3) Electronic structure of relatively large-scale germanium sections of realistically strained Si/strained Ge/ strained Si nanowire heterostructures is computed using empirical tight binding and it is shown that the average non-homogeneous strain in these structures drives their interesting non-conventional electronic characteristics such as hole effective masses which decrease as the wire cross-section is reduced. (4) It is shown that tight binding, though empirical in nature, is not necessarily limited to the material and atomic structure for which the parameters have been empirically derived, but that simple changes may adapt the derived parameters to new bond environments. Si (100) surface electronic structure is obtained from bulk Si parameters.

Ultrafast Electron Dynamics in Solar Energy Conversion.

PubMed

Ponseca, Carlito S; Chábera, Pavel; Uhlig, Jens; Persson, Petter; Sundström, Villy

2017-08-23

Electrons are the workhorses of solar energy conversion. Conversion of the energy of light to electricity in photovoltaics, or to energy-rich molecules (solar fuel) through photocatalytic processes, invariably starts with photoinduced generation of energy-rich electrons. The harvesting of these electrons in practical devices rests on a series of electron transfer processes whose dynamics and efficiencies determine the function of materials and devices. To capture the energy of a photogenerated electron-hole pair in a solar cell material, charges of opposite sign have to be separated against electrostatic attractions, prevented from recombining and being transported through the active material to electrodes where they can be extracted. In photocatalytic solar fuel production, these electron processes are coupled to chemical reactions leading to storage of the energy of light in chemical bonds. With the focus on the ultrafast time scale, we here discuss the light-induced electron processes underlying the function of several molecular and hybrid materials currently under development for solar energy applications in dye or quantum dot-sensitized solar cells, polymer-fullerene polymer solar cells, organometal halide perovskite solar cells, and finally some photocatalytic systems.

The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems

NASA Astrophysics Data System (ADS)

Mikolajick, T.; Heinzig, A.; Trommer, J.; Baldauf, T.; Weber, W. M.

2017-04-01

With CMOS scaling reaching physical limits in the next decade, new approaches are required to enhance the functionality of electronic systems. Reconfigurability on the device level promises to realize more complex systems with a lower device count. In the last five years a number of interesting concepts have been proposed to realize such a device level reconfiguration. Among these the reconfigurable field effect transistor (RFET), a device that can be configured between an n-channel and p-channel behavior by applying an electrical signal, can be considered as an end-of-roadmap extension of current technology with only small modifications and even simplifications to the process flow. This article gives a review on the RFET basics and current status. In the first sections state-of-the-art of reconfigurable devices will be summarized and the RFET will be introduced together with related devices based on silicon nanowire technology. The device optimization with respect to device symmetry and performance will be discussed next. The potential of the RFET device technology will then be shown by discussing selected circuit implementations making use of the unique advantages of this device concept. The basic device concept was also extended towards applications in flexible devices and sensors, also extending the capabilities towards so-called More-than-Moore applications where new functionalities are implemented in CMOS-based processes. Finally, the prospects of RFET device technology will be discussed.

Transient pulse analysis of ionized electronics exposed to γ-radiation generated from a relativistic electron beam

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Hong, Dongpyo; Jeong, Jin-Young; Jang, Jungmin; Bera, Anirban; Barik, Ranjan Kumar; Bhattacharya, Ranajoy; Cho, Ilsung; Kim, Byungsu; Park, Chawon; Jung, Wongyun; Park, Seunghyuk; Park, Gun-Sik

2018-02-01

When a semiconductor element is irradiated with radiation in the form of a transient pulse emitted from a nuclear explosion, a large amount of charge is generated in a short time in the device. A photocurrent amplified in a certain direction by these types of charges cause the device to break down and malfunction or in extreme cases causes them to burn out. In this study, a pulse-type γ-ray generator based on a relativistic electron beam accelerator (γ=2.2, β=0.89) which functions by means of tungsten impingement was constructed and tested in an effort to investigate the process and effects of the photocurrent formed by electron hole pairs (EHP) generated in a pMOSFET device when a transient radiation pulse is incident in the device. The pulse-type γ-ray irradiating device used here to generate the electron beam current in a short time was devised to allow an increase in the irradiation dose. A precise signal processing circuit was constructed to measure the photocurrent of the small signal generated by the pMOSFET due to the electron beam accelerator pulse signal from the large noise stemming from the electromagnetic field around the relativistic electron beam accelerator. The pulse-type γ-ray generator was installed to meet the requirements of relativistic electron beam accelerators, and beam irradiation was conducted after a beam commissioning step.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Negative differential resistance and switch behavior of T-BxNy (x, y = 5, 6, 11) molecular junctions

NASA Astrophysics Data System (ADS)

Wang, Shi-Liang; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang; Xin, Jian-Guo

2017-05-01

The electronic transport properties of T-BxNy (x, y = 5, 6, 11) molecular junction are investigated based on first-principle density functional theory and non-equilibrium Green's function method. Strong negative differential resistance (NDR) behavior is observed for T-B5N6 molecule under negative and positive bias voltages, with an obvious switch effect for T-B6N5. However, only small NDR is shown for the complex of the two molecules. The projected device density of states, the spatial distribution of molecular orbitals, and the effect of transmission spectra under various bias voltages on the electronic transport properties are analyzed. The obvious effect of bias voltage on the changes in the electronic distribution of frontier molecular orbitals is responsible for the NDR or switch behavior. Therefore, different functional molecular devices can be obtained with different structures of T-BxNy.

Fractal design concepts for stretchable electronics.

PubMed

Fan, Jonathan A; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J; Huang, Yonggang; Rogers, John A

2014-01-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Fractal design concepts for stretchable electronics

NASA Astrophysics Data System (ADS)

Fan, Jonathan A.; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J.; Huang, Yonggang; Rogers, John A.

2014-02-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Building devices from colloidal quantum dots.

PubMed

Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

2016-08-26

The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

Enlarging photovoltaic effect: combination of classic photoelectric and ferroelectric photovoltaic effects

PubMed Central

Zhang, Jingjiao; Su, Xiaodong; Shen, Mingrong; Dai, Zhihua; Zhang, Lingjun; He, Xiyun; Cheng, Wenxiu; Cao, Mengyu; Zou, Guifu

2013-01-01

Converting light energy to electrical energy in photovoltaic devices relies on the photogenerated electrons and holes separated by the built-in potential in semiconductors. Photo-excited electrons in metal electrodes are usually not considered in this process. Here, we report an enhanced photovoltaic effect in the ferroelectric lanthanum-modified lead zirconate titanate (PLZT) by using low work function metals as the electrodes. We believe that electrons in the metal with low work function could be photo-emitted into PLZT and form the dominant photocurrent in our devices. Under AM1.5 (100 mW/cm2) illumination, the short-circuit current and open-circuit voltage of Mg/PLZT/ITO are about 150 and 2 times of those of Pt/PLZT/ITO, respectively. The photovoltaic response of PLZT capacitor was expanded from ultraviolet to visible spectra, and it may have important impact on design and fabrication of high performance photovoltaic devices based on ferroelectric materials. PMID:23811832

Materials for programmed, functional transformation in transient electronic systems.

PubMed

Hwang, Suk-Won; Kang, Seung-Kyun; Huang, Xian; Brenckle, Mark A; Omenetto, Fiorenzo G; Rogers, John A

2015-01-07

Materials and device designs are presented for electronic systems that undergo functional transformation by a controlled time sequence in the dissolution of active materials and/or encapsulation layers. Demonstration examples include various biocompatible, multifunctional systems with autonomous behavior defined by materials selection and layout. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

NASA Astrophysics Data System (ADS)

Zhang, Hua; Zhou, Wenzhe; Liu, Qi; Yang, Zhixiong; Pan, Jiangling; Ouyang, Fangping; Xu, Hui

2017-09-01

Based on MoS2 nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS2 nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 104, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.

Synaptic behaviors of a single metal-oxide-metal resistive device

NASA Astrophysics Data System (ADS)

Choi, Sang-Jun; Kim, Guk-Bae; Lee, Kyoobin; Kim, Ki-Hong; Yang, Woo-Young; Cho, Soohaeng; Bae, Hyung-Jin; Seo, Dong-Seok; Kim, Sang-Il; Lee, Kyung-Jin

2011-03-01

The mammalian brain is far superior to today's electronic circuits in intelligence and efficiency. Its functions are realized by the network of neurons connected via synapses. Much effort has been extended in finding satisfactory electronic neural networks that act like brains, i.e., especially the electronic version of synapse that is capable of the weight control and is independent of the external data storage. We demonstrate experimentally that a single metal-oxide-metal structure successfully stores the biological synaptic weight variations (synaptic plasticity) without any external storage node or circuit. Our device also demonstrates the reliability of plasticity experimentally with the model considering the time dependence of spikes. All these properties are embodied by the change of resistance level corresponding to the history of injected voltage-pulse signals. Moreover, we prove the capability of second-order learning of the multi-resistive device by applying it to the circuit composed of transistors. We anticipate our demonstration will invigorate the study of electronic neural networks using non-volatile multi-resistive device, which is simpler and superior compared to other storage devices.

Electronic switching circuit uses complementary non-linear components

NASA Technical Reports Server (NTRS)

Zucker, O. S.

1972-01-01

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

The Effects of the Removal of Electronic Devices for 48 Hours on Sleep in Elite Judo Athletes.

PubMed

Dunican, Ian C; Martin, David T; Halson, Shona L; Reale, Reid J; Dawson, Brian T; Caldwell, John A; Jones, Maddison J; Eastwood, Peter R

2017-10-01

This study examined the effects of evening use of electronic devices (i.e., smartphones, etc.) on sleep quality and next-day athletic and cognitive performance in elite judo athletes. Over 6 consecutive days and nights, 23 elite Australian judo athletes were monitored while attending a camp at the Australian Institute of Sport (AIS). In 14 athletes, all electronic devices were removed on days 3 and 4 (i.e., for 48 hours: the "device-restricted group"), whereas 9 were permitted to use their devices throughout the camp (the "control group"). All athletes wore an activity monitor (Readiband) continuously to provide measures of sleep quantity and quality. Other self-reported (diary) measures included time in bed, electronic device use, and rate of perceived exertion during training periods. Cognitive performance (Cogstate) and physical performance (single leg triple hop test) were also measured. When considering night 2 as a "baseline" for each group, removal of electronic devices on nights 3 and 4 (device-restricted group) resulted in no significant differences in any sleep-related measure between the groups. When comparing actigraphy-based measures of sleep to subjective measures, all athletes significantly overestimated sleep duration by 58 ± 85 minutes (p = 0.001) per night and underestimated time of sleep onset by 37 ± 72 minutes (p = 0.001) per night. No differences in physical or cognitive function were observed between the groups. This study has shown that the removal of electronic devices for a period of two nights (48 hours) during a judo camp does not affect sleep quality or quantity or influence athletic or cognitive performance.

Tailored Surfaces/Assemblies for Molecular Plasmonics and Plasmonic Molecular Electronics.

PubMed

Lacroix, Jean-Christophe; Martin, Pascal; Lacaze, Pierre-Camille

2017-06-12

Molecular plasmonics uses and explores molecule-plasmon interactions on metal nanostructures for spectroscopic, nanophotonic, and nanoelectronic devices. This review focuses on tailored surfaces/assemblies for molecular plasmonics and describes active molecular plasmonic devices in which functional molecules and polymers change their structural, electrical, and/or optical properties in response to external stimuli and that can dynamically tune the plasmonic properties. We also explore an emerging research field combining molecular plasmonics and molecular electronics.

Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

PubMed

Huang, Fei; Wu, Hongbin; Cao, Yong

2010-07-01

Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

Advanced electronic displays and their potential in future transport aircraft

NASA Technical Reports Server (NTRS)

Hatfield, J. J.

1981-01-01

It is pointed out that electronic displays represent one of the keys to continued integration and improvement of the effectiveness of avionic systems in future transport aircraft. An employment of modern electronic display media and generation has become vital in connection with the increases in modes and functions of modern aircraft. Requirements for electronic systems of future transports are examined, and a description is provided of the tools which are available for cockpit integration, taking into account trends in information processing and presentation, trends in integrated display devices, and trends concerning input/output devices. Developments related to display media, display generation, and I/O devices are considered, giving attention to a comparison of CRT and flat-panel display technology, advanced HUD technology and multifunction controls. Integrated display formats are discussed along with integrated systems and cockpit configurations.

Flexible barrier film, method of forming same, and organic electronic device including same

DOEpatents

Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

2013-03-26

A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

Screen printed passive components for flexible power electronics

NASA Astrophysics Data System (ADS)

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-10-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

e-Biologics: Fabrication of Sustainable Electronics with “Green” Biological Materials

PubMed Central

2017-01-01

ABSTRACT The growing ubiquity of electronic devices is increasingly consuming substantial energy and rare resources for materials fabrication, as well as creating expansive volumes of toxic waste. This is not sustainable. Electronic biological materials (e-biologics) that are produced with microbes, or designed with microbial components as the guide for synthesis, are a potential green solution. Some e-biologics can be fabricated from renewable feedstocks with relatively low energy inputs, often while avoiding the harsh chemicals used for synthesizing more traditional electronic materials. Several are completely free of toxic components, can be readily recycled, and offer unique features not found in traditional electronic materials in terms of size, performance, and opportunities for diverse functionalization. An appropriate investment in the concerted multidisciplinary collaborative research required to identify and characterize e-biologics and to engineer materials and devices based on e-biologics could be rewarded with a new “green age” of sustainable electronic materials and devices. PMID:28655820

Screen printed passive components for flexible power electronics

PubMed Central

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-01-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application. PMID:26514331

Screen printed passive components for flexible power electronics.

PubMed

Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

2015-10-30

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Electronic waste (e-waste): material flows and management practices in Nigeria.

PubMed

Nnorom, Innocent Chidi; Osibanjo, Oladele

2008-01-01

The growth in electrical and electronic equipment (EEE) production and consumption has been exponential in the last two decades. This has been as a result of the rapid changes in equipment features and capabilities, decrease in prices, and the growth in internet use. This creates a large volume of waste stream of obsolete electrical and electronic devices (e-waste) in developed countries. There is high level of trans-boundary movement of these devices as secondhand electronic equipment into developing countries in an attempt to bridge the 'digital divide'. The past decade has witnessed a phenomenal advancement in information and communication technology (ICT) in Nigeria, most of which rely on imported secondhand devices. This paper attempts to review the material flow of secondhand/scrap electronic devices into Nigeria, the current management practices for e-waste and the environmental and health implications of such low-end management practices. Establishment of formal recycling facilities, introduction of legislation dealing specifically with e-waste and the confirmation of the functionality of secondhand EEE prior to importation are some of the options available to the government in dealing with this difficult issue.

A Bioelectrochemical Approach to Characterize Extracellular Electron Transfer by Synechocystis sp. PCC6803

PubMed Central

Cereda, Angelo; Hitchcock, Andrew; Symes, Mark D.; Cronin, Leroy; Bibby, Thomas S.; Jones, Anne K.

2014-01-01

Biophotovoltaic devices employ photosynthetic organisms at the anode of a microbial fuel cell to generate electrical power. Although a range of cyanobacteria and algae have been shown to generate photocurrent in devices of a multitude of architectures, mechanistic understanding of extracellular electron transfer by phototrophs remains minimal. Here we describe a mediatorless bioelectrochemical device to measure the electrogenic output of a planktonically grown cyanobacterium, Synechocystis sp. PCC6803. Light dependent production of current is measured, and its magnitude is shown to scale with microbial cell concentration and light intensity. Bioelectrochemical characterization of a Synechocystis mutant lacking Photosystem II demonstrates conclusively that production of the majority of photocurrent requires a functional water splitting aparatus and electrons are likely ultimately derived from water. This shows the potential of the device to rapidly and quantitatively characterize photocurrent production by genetically modified strains, an approach that can be used in future studies to delineate the mechanisms of cyanobacterial extracellular electron transport. PMID:24637387

Electronic Biosensors Based on III-Nitride Semiconductors.

PubMed

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Engineering interfacial properties of organic semiconductors through soft-contact lamination and surface functionalization

NASA Astrophysics Data System (ADS)

Shu, Andrew Leo

Organic electronics is a topic of interest due to its potential for low temperature and solution processing for large area and flexible applications. Examples of organic electronic devices are already available on the market; however these are, in general, still rather expensive. In order to fully realize inexpensive and efficient organic electronics, the properties of organic films need to be understood and strategies developed to take advantage of these properties to improve device performance. This work focuses on two strategies that can be used to control charge transport at interfaces with active organic semiconducting thin films. These strategies are studied and verified with a range of photoemission spectroscopy, surface probe microscopy, and electrical measurements. Vacuum evaporated molecular organic devices have long used layer stacking of different materials as a method of dividing roles in a device and modifying energy level alignment to improve device performance and efficiency. Applying this type of architecture for solution-processed devices, on the other hand, is nontrivial, as an issue of removal of or mixing with underlying layers arises. We present and examine here soft-contact lamination as a viable technique for depositing solution-processed multilayer structures. The energetics at homojunctions of a couple of air-stable polymers is investigated. Charge transport is then compared between a two-layer film and a single-layer film of equivalent thicknesses. The interface formed by soft-contact lamination is found to be transparent with respect to electronic charge carriers. We also propose a technique for modifying electronic level alignment at active organic-organic heterojunctions using dipolar self-assembled monolayers (SAM). An ultra-thin metal oxide is first deposited via a gentle low temperature chemical vapor deposition as an adhesion layer for the SAM. The deposition is shown to be successful for a variety of organic films. A series of phenylphosphonic acid SAM molecules with various molecular dipoles is then used to functionalize the surface of an organic film and found to modify the work function depending on the molecular dipole across the molecule. This in turn is found to modify the energy level alignment between the underlying organic film with an organic film deposited on top.

Work function and surface stability of tungsten-based thermionic electron emission cathodes

NASA Astrophysics Data System (ADS)

Jacobs, Ryan; Morgan, Dane; Booske, John

2017-11-01

Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

Functional electronic inversion layers at ferroelectric domain walls

NASA Astrophysics Data System (ADS)

Mundy, J. A.; Schaab, J.; Kumagai, Y.; Cano, A.; Stengel, M.; Krug, I. P.; Gottlob, D. M.; Doğanay, H.; Holtz, M. E.; Held, R.; Yan, Z.; Bourret, E.; Schneider, C. M.; Schlom, D. G.; Muller, D. A.; Ramesh, R.; Spaldin, N. A.; Meier, D.

2017-06-01

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation--and eventual activation--of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.

Electronic transport properties in [n]cycloparaphenylenes molecular devices

NASA Astrophysics Data System (ADS)

Hu, Lizhi; Guo, Yandong; Yan, Xiaohong; Zeng, Hongli; Zhou, Jie

2017-07-01

The electronic transport of [n]cycloparaphenylenes ([n]CPPs) is investigated based on nonequilibrium Green's function formalism in combination with the density-functional theory. Negative differential resistance (NDR) phenomenon is observed. Further analysis shows that the reduction of the transmission peak induced by the bias changing near Fermi energy results in the NDR effect. Replacing the electrode (from carbon chain to Au electrode), doping with N atom and changing the size of the nanohoop (n = 5, 6, 8, 10) have also been studied and the NDR still exists, suggesting the NDR behavior is the intrinsic feature of such [n]CPPs systems, which would be quite useful in future nanoelectronic devices.

Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

PubMed Central

Fabiano, Simone; Sani, Negar; Kawahara, Jun; Kergoat, Loïg; Nissa, Josefin; Engquist, Isak; Crispin, Xavier; Berggren, Magnus

2017-01-01

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an organic mixed ion-electron conducting polymer. The PEDOT phase transports holes and is redox-active, whereas the PSS phase transports ions. When PEDOT is redox-switched between its semiconducting and conducting state, the electronic and optical properties of its bulk are controlled. Therefore, it is appealing to use this transition in electrochemical devices and to integrate those into large-scale circuits, such as display or memory matrices. Addressability and memory functionality of individual devices, within these matrices, are typically achieved by nonlinear current-voltage characteristics and bistability—functions that can potentially be offered by the semiconductor-conductor transition of redox polymers. However, low conductivity of the semiconducting state and poor bistability, due to self-discharge, make fast operation and memory retention impossible. We report that a ferroelectric polymer layer, coated along the counter electrode, can control the redox state of PEDOT. The polarization switching characteristics of the ferroelectric polymer, which take place as the coercive field is overcome, introduce desired nonlinearity and bistability in devices that maintain PEDOT in its highly conducting and fast-operating regime. Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors. PMID:28695197

All-optical photochromic spatial light modulators based on photoinduced electron transfer in rigid matrices

NASA Technical Reports Server (NTRS)

Beratan, David N. (Inventor); Perry, Joseph W. (Inventor)

1991-01-01

A single material (not a multi-element structure) spatial light modulator may be written to, as well as read out from, using light. The device has tailorable rise and hold times dependent on the composition and concentration of the molecular species used as the active components. The spatial resolution of this device is limited only by light diffraction as in volume holograms. The device may function as a two-dimensional mask (transmission or reflection) or as a three-dimensional volume holographic medium. This device, based on optically-induced electron transfer, is able to perform incoherent to coherent image conversion or wavelength conversion over a wide spectral range (ultraviolet, visible, or near-infrared regions).

Giant rectification in graphene nanoflake molecular devices with asymmetric graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Ji, Xiao-Li; Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

2016-09-01

By applying density functional theory based nonequilibrium Green's function method, we theoretically investigate the electron transport properties of a zigzag-edged trigonal graphene nanoflake (ZTGNF) sandwiched between two asymmetric zigzag graphene nanoribbon (zGNR) and armchair graphene nanoribbon (aGNR) electrodes with carbon atomic chains (CACs) as the anchoring groups. Significant rectifying effects have been observed for these molecular devices in low bias voltage regions. Interestingly, the rectifying performance of molecular devices can be optimized by changing the width of the aGNR electrode and the number of anchoring CACs. Especially, the molecular device displays giant rectification ratios up to the order of 104 when two CACs are used as the anchoring group between the ZTGNF and the right aGNR electrode. Further analysis indicates that the asymmetric shift of the perturbed molecular energy levels and the spatial parity of the electron wavefunctions in the electrodes around the Fermi level play key roles in determining the rectification performance. And the spatial distributions of tunneling electron wavefunctions under negative bias voltages can be modified to be very localized by changing the number of anchoring CACs, which is found to be the origin of the giant rectification ratios.

Carbon Electrode-Molecule Junctions: A Reliable Platform for Molecular Electronics.

PubMed

Jia, Chuancheng; Ma, Bangjun; Xin, Na; Guo, Xuefeng

2015-09-15

The development of reliable approaches to integrate individual or a small collection of molecules into electrical nanocircuits, often termed "molecular electronics", is currently a research focus because it can not only overcome the increasing difficulties and fundamental limitations of miniaturization of current silicon-based electronic devices, but can also enable us to probe and understand the intrinsic properties of materials at the atomic- and/or molecular-length scale. This development might also lead to direct observation of novel effects and fundamental discovery of physical phenomena that are not accessible by traditional materials or approaches. Therefore, researchers from a variety of backgrounds have been devoting great effort to this objective, which has started to move beyond simple descriptions of charge transport and branch out in different directions, reflecting the interdisciplinarity. This Account exemplifies our ongoing interest and great effort in developing efficient lithographic methodologies capable of creating molecular electronic devices through the combination of top-down micro/nanofabrication with bottom-up molecular assembly. These devices use nanogapped carbon nanomaterials (such as single-walled carbon nanotubes (SWCNTs) and graphene), with a particular focus on graphene, as point contacts formed by electron beam lithography and precise oxygen plasma etching. Through robust amide linkages, functional molecular bridges terminated with diamine moieties are covalently wired into the carboxylic acid-functionalized nanogaps to form stable carbon electrode-molecule junctions with desired functionalities. At the macroscopic level, to improve the contact interface between electrodes and organic semiconductors and lower Schottky barriers, we used SWCNTs and graphene as efficient electrodes to explore the intrinsic properties of organic thin films, and then build functional high-performance organic nanotransistors with ultrahigh responsivities. At the molecular level, to form robust covalent bonds between electrodes and molecules and improve device stability, we developed a reliable system to immobilize individual molecules within a nanoscale gap of either SWCNTs or graphene through covalent amide bond formation, thus affording two classes of carbon electrode-molecule single-molecule junctions. One unique feature of these devices is the fact that they contain only one or two molecules as conductive elements, thus forming the basis for building new classes of chemo/biosensors with ultrahigh sensitivity. We have used these approaches to reveal the dependence of the charge transport of individual metallo-DNA duplexes on π-stacking integrity, and fabricate molecular devices capable of realizing label-free, real-time electrical detection of biological interactions at the single-event level, or switching their molecular conductance upon exposure to external stimuli, such as ion, pH, and light. These investigations highlight the unique advantages and importance of these universal methodologies to produce functional carbon electrode-molecule junctions in current and future researches toward the development of practical molecular devices, thus offering a reliable platform for molecular electronics and the promise of a new generation of multifunctional integrated circuits and sensors.

Recent advances in molecular electronics based on carbon nanotubes.

PubMed

Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

2010-01-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Inelastic transport theory from first principles: Methodology and application to nanoscale devices

NASA Astrophysics Data System (ADS)

Frederiksen, Thomas; Paulsson, Magnus; Brandbyge, Mads; Jauho, Antti-Pekka

2007-05-01

We describe a first-principles method for calculating electronic structure, vibrational modes and frequencies, electron-phonon couplings, and inelastic electron transport properties of an atomic-scale device bridging two metallic contacts under nonequilibrium conditions. The method extends the density-functional codes SIESTA and TRANSIESTA that use atomic basis sets. The inelastic conductance characteristics are calculated using the nonequilibrium Green’s function formalism, and the electron-phonon interaction is addressed with perturbation theory up to the level of the self-consistent Born approximation. While these calculations often are computationally demanding, we show how they can be approximated by a simple and efficient lowest order expansion. Our method also addresses effects of energy dissipation and local heating of the junction via detailed calculations of the power flow. We demonstrate the developed procedures by considering inelastic transport through atomic gold wires of various lengths, thereby extending the results presented in Frederiksen [Phys. Rev. Lett. 93, 256601 (2004)]. To illustrate that the method applies more generally to molecular devices, we also calculate the inelastic current through different hydrocarbon molecules between gold electrodes. Both for the wires and the molecules our theory is in quantitative agreement with experiments, and characterizes the system-specific mode selectivity and local heating.

Conjugated Polymer Zwitterions: Efficient Interlayer Materials in Organic Electronics.

PubMed

Liu, Yao; Duzhko, Volodimyr V; Page, Zachariah A; Emrick, Todd; Russell, Thomas P

2016-11-15

Conjugated polymer zwitterions (CPZs) are neutral, hydrophilic, polymer semiconductors. The pendent zwitterions, viewed as side chain dipoles, impart solubility in polar solvents for solution processing, and open opportunities as interfacial components of optoelectronic devices, for example, between metal electrodes and organic semiconductor active layers. Such interlayers are crucial for defining the performance of organic electronic devices, e.g., field-effect transistors (OFETs), light-emitting diodes (OLEDs), and photovoltaics (OPVs), all of which consist of multilayer structures. The interlayers reduce the Schottky barrier height and thus improve charge injection in OFETs and OLEDs. In OPVs, the interlayers serve to increase the built-in electric potential difference (V bi ) across the active layer, ensuring efficient extraction of photogenerated charge carriers. In general, polar and even charged electronically active polymers have gained recognition for their ability to modify metal/semiconductor interfaces to the benefit of organic electronics. While conjugated polyelectrolytes (CPEs) as interlayer materials are well-documented, open questions remain about the role of mobile counterions in CPE-containing devices. CPZs possess the processing advantages of CPEs, but as neutral molecules lack any potential complications associated with counterions. The electronic implications of CPZs on metal electrodes stem from the orientation of the zwitterion dipole moment in close proximity to the metal surface, and the resultant surface-induced polarization. This generates an interfacial dipole (Δ) at the CPZ/metal interface, altering the work function of the electrode, as confirmed by ultraviolet photoelectron spectroscopy (UPS), and improving device performance. An ideal cathode interlayer would reduce electrode work function, have orthogonal processability to the active layer, exhibit good film forming properties (i.e., wettability/uniformity), prevent exciton quenching, possess optimal electron affinity that neither limits the work function reduction nor impedes the charge extraction, transport electrons selectively, and exhibit long-term stability. Our recent discoveries show that CPZs achieve many of these attributes, and are poised for further expansion and development in the interfacial science of organic electronics. This Account reviews a recent collaboration that began with the synthesis of CPZs and a study of their structural and electronic properties on metals, then extended to their application as interlayer materials for OPVs. We discuss CPZ structure-property relationships based on several material platforms, ranging from homopolymers to copolymers, and from materials with intrinsic p-type conjugated backbones to those with intrinsic n-type conjugated backbones. We discuss key components of such interlayers, including (i) the origin of work function reduction of CPZ interlayers on metals; (ii) the role of the frontier molecular orbital energy levels and their trade-offs in optimizing electronic and device properties; and (iii) the role of polymer conductivity type and the magnitude of charge carrier mobility. Our motivation is to present our prior use and current understanding of CPZs as interlayer materials in organic electronics, and describe outstanding issues and future potential directions.

Electromagnetic interference from electronic devices used in the management of type 1 diabetes can impair the performance of an avalanche transceiver in search mode.

PubMed

Miller, Steven C M

2015-06-01

Portable electronic devices play an important role in the management of type 1 diabetes mellitus. Electromagnetic interference from electronic devices has been shown to impair the function of an avalanche transceiver in search mode (but not in transmitting mode). This study investigates the influence of electromagnetic interference from diabetes devices on a searching avalanche beacon. The greatest distance at which an avalanche transceiver (in search mode) could accurately indicate the location of a transmitting transceiver was assessed when portable electronic devices (including an insulin pump and commonly used real-time continuous subcutaneous glucose monitoring system [rtCGMS]) were held in close proximity to each transceiver. The searching transceiver could accurately locate a transmitted signal at a distance of 30 m when used alone. This distance was unchanged by the Dexcom G4 rtCGMS, but was reduced to 10 m when the Medtronic Guardian rtCGMS was held close (within 30 cm) to the receiving beacon. Interference from the Animas Vibe insulin pump reduced this distance to 5 m, impairing the searching transceiver in a manner identical to the effect of a cell phone. Electromagnetic interference produced by some diabetes devices when held within 30 cm of a searching avalanche transceiver can impair the ability to locate a signal. Such interference could significantly compromise the outcome of a companion rescue scenario. Further investigation using other pumps and rtCGMS devices is required to evaluate all available diabetes electronics. Meantime, all electronic diabetes devices including rtCGMS and insulin pumps should not be used within 30 cm of an avalanche transceiver. Copyright © 2015 Wilderness Medical Society. Published by Elsevier Inc. All rights reserved.

Single-molecular diodes based on opioid derivatives.

PubMed

Siqueira, M R S; Corrêa, S M; Gester, R M; Del Nero, J; Neto, A M J C

2015-12-01

We propose an efficient single-molecule rectifier based on a derivative of opioid. Electron transport properties are investigated within the non-equilibrium Green's function formalism combined with density functional theory. The analysis of the current-voltage characteristics indicates obvious diode-like behavior. While heroin presents rectification coefficient R>1, indicating preferential electronic current from electron-donating to electron-withdrawing, 3 and 6-acetylmorphine and morphine exhibit contrary behavior, R<1. Our calculations indicate that the simple inclusion of acetyl groups modulate a range of devices, which varies from simple rectifying to resonant-tunneling diodes. In particular, the rectification rations for heroin diodes show microampere electron current with a maximum of rectification (R=9.1) at very low bias voltage of ∼0.6 V and (R=14.3)∼1.8 V with resistance varying between 0.4 and 1.5 M Ω. Once most of the current single-molecule diodes usually rectifies in nanoampere, are not stable over 1.0 V and present electrical resistance around 10 M. Molecular devices based on opioid derivatives are promising in molecular electronics.

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices

DOE PAGES

Wang, Jian; Xu, Liang; Lee, Yun -Ju; ...

2015-10-09

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron–exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer dopingmore » low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. As a result, these understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.« less

Enhancing stability and efficiency of perovskite solar cells with crosslinkable silane-functionalized and doped fullerene

DOE PAGES

Bai, Yang; Dong, Qingfeng; Shao, Yuchuan; ...

2016-10-05

The instability of hybrid perovskite materials due to water and moisture arises as one major challenge to be addressed before any practical application of the demonstrated high efficiency perovskite solar cells. Here we report a facile strategy that can simultaneously enhance the stability and efficiency of p-i-n planar heterojunction-structure perovskite devices. Crosslinkable silane molecules with hydrophobic functional groups are bonded onto fullerene to make the fullerene layer highly water-resistant. Methylammonium iodide is introduced in the fullerene layer for n-doping via anion-induced electron transfer, resulting in dramatically increased conductivity over 100-fold. With crosslinkable silane-functionalized and doped fullerene electron transport layer, themore » perovskite devices deliver an efficiency of 19.5% with a high fill factor of 80.6%. Furthermore, a crosslinked silane-modified fullerene layer also enhances the water and moisture stability of the non-sealed perovskite devices by retaining nearly 90% of their original efficiencies after 30 days’ exposure in an ambient environment.« less

Enhancing stability and efficiency of perovskite solar cells with crosslinkable silane-functionalized and doped fullerene

PubMed Central

Bai, Yang; Dong, Qingfeng; Shao, Yuchuan; Deng, Yehao; Wang, Qi; Shen, Liang; Wang, Dong; Wei, Wei; Huang, Jinsong

2016-01-01

The instability of hybrid perovskite materials due to water and moisture arises as one major challenge to be addressed before any practical application of the demonstrated high efficiency perovskite solar cells. Here we report a facile strategy that can simultaneously enhance the stability and efficiency of p–i–n planar heterojunction-structure perovskite devices. Crosslinkable silane molecules with hydrophobic functional groups are bonded onto fullerene to make the fullerene layer highly water-resistant. Methylammonium iodide is introduced in the fullerene layer for n-doping via anion-induced electron transfer, resulting in dramatically increased conductivity over 100-fold. With crosslinkable silane-functionalized and doped fullerene electron transport layer, the perovskite devices deliver an efficiency of 19.5% with a high fill factor of 80.6%. A crosslinked silane-modified fullerene layer also enhances the water and moisture stability of the non-sealed perovskite devices by retaining nearly 90% of their original efficiencies after 30 days' exposure in an ambient environment. PMID:27703136

Organic photovoltaic cell incorporating electron conducting exciton blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Lassiter, Brian E.

2014-08-26

The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to anmore » analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.« less

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Flexible Asymmetric Supercapacitor Based on Functionalized Reduced Graphene Oxide Aerogels with Wide Working Potential Window.

PubMed

Bora, Anindita; Mohan, Kiranjyoti; Doley, Simanta; Dolui, Swapan Kumar

2018-03-07

Flexible energy storage devices are in great demand since the advent of flexible electronics. Until now, flexible supercapacitors based on graphene analogues usually have had low operating potential windows. To this end, two dissimilar electrode materials with complementary potential ranges are employed to obtain an optimum cell voltage of 1.8 V. A low-temperature organic sol-gel method is used to prepare two different types of functionalized reduced graphene oxide aerogels (rGOA) where Ag nanorod functionalized rGOA acts as a negative electrode while polyaniline nanotube functionalized rGOA acts as a positive electrode. Both materials comprehensively exploit their unique properties to produce a device that has high energy and power densities. An assembled all-solid-state asymmetric supercapacitor gives a high energy density of 52.85 W h kg -1 and power density of 31.5 kW kg -1 with excellent cycling and temperature stability. The device also performs extraordinarily well under different bending conditions, suggesting its potential to meet the requirements for flexible electronics.

Chemoelectronic circuits based on metal nanoparticles

NASA Astrophysics Data System (ADS)

Yan, Yong; Warren, Scott C.; Fuller, Patrick; Grzybowski, Bartosz A.

2016-07-01

To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the ‘jammed’ nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems ‘chemoelectronic’. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also ‘green’, in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

Chemoelectronic circuits based on metal nanoparticles.

PubMed

Yan, Yong; Warren, Scott C; Fuller, Patrick; Grzybowski, Bartosz A

2016-07-01

To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the 'jammed' nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems 'chemoelectronic'. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also 'green', in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

Ultra-slim flexible glass for roll-to-roll electronic device fabrication

NASA Astrophysics Data System (ADS)

Garner, Sean; Glaesemann, Scott; Li, Xinghua

2014-08-01

As displays and electronics evolve to become lighter, thinner, and more flexible, the choice of substrate continues to be critical to their overall optimization. The substrate directly affects improvements in the designs, materials, fabrication processes, and performance of advanced electronics. With their inherent benefits such as surface quality, optical transmission, hermeticity, and thermal and dimensional stability, glass substrates enable high-quality and long-life devices. As substrate thicknesses are reduced below 200 μm, ultra-slim flexible glass continues to provide these inherent benefits to high-performance flexible electronics such as displays, touch sensors, photovoltaics, and lighting. In addition, the reduction in glass thickness also allows for new device designs and high-throughput, continuous manufacturing enabled by R2R processes. This paper provides an overview of ultra-slim flexible glass substrates and how they enable flexible electronic device optimization. Specific focus is put on flexible glass' mechanical reliability. For this, a combination of substrate design and process optimizations has been demonstrated that enables R2R device fabrication on flexible glass. Demonstrations of R2R flexible glass processes such as vacuum deposition, photolithography, laser patterning, screen printing, slot die coating, and lamination have been made. Compatibility with these key process steps has resulted in the first demonstration of a fully functional flexible glass device fabricated completely using R2R processes.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

DOE PAGES

Yajima, Takeaki; Hikita, Yasuyuki; Minohara, Makoto; ...

2015-04-07

The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV.more » This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.« less

Neurophysiology and neural engineering: a review.

PubMed

Prochazka, Arthur

2017-08-01

Neurophysiology is the branch of physiology concerned with understanding the function of neural systems. Neural engineering (also known as neuroengineering) is a discipline within biomedical engineering that uses engineering techniques to understand, repair, replace, enhance, or otherwise exploit the properties and functions of neural systems. In most cases neural engineering involves the development of an interface between electronic devices and living neural tissue. This review describes the origins of neural engineering, the explosive development of methods and devices commencing in the late 1950s, and the present-day devices that have resulted. The barriers to interfacing electronic devices with living neural tissues are many and varied, and consequently there have been numerous stops and starts along the way. Representative examples are discussed. None of this could have happened without a basic understanding of the relevant neurophysiology. I also consider examples of how neural engineering is repaying the debt to basic neurophysiology with new knowledge and insight. Copyright © 2017 the American Physiological Society.

49 CFR 236.101 - Purpose of inspection and tests; removal from service of relay or device failing to meet test...

Code of Federal Regulations, 2010 CFR

2010-10-01

.../or equipment is maintained in condition to perform its intended function. Electronic device, relay... service of relay or device failing to meet test requirements. 236.101 Section 236.101 Transportation Other... Inspections and Tests; All Systems § 236.101 Purpose of inspection and tests; removal from service of relay or...

Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Huajun; Dong, Yongqi; Cherukara, Matthew J.

Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices: resistive switching requires that themore » pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through operando, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices.« less

Electrical control of charged carriers and excitons in atomically thin materials

NASA Astrophysics Data System (ADS)

Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

2018-02-01

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

Green's function calculations for semi-infinite carbon nanotubes

NASA Astrophysics Data System (ADS)

John, D. L.; Pulfrey, D. L.

2006-02-01

In the modeling of nanoscale electronic devices, the non-equilibrium Green's function technique is gaining increasing popularity. One complication in this method is the need for computation of the self-energy functions that account for the interactions between the active portion of a device and its leads. In the one-dimensional case, these functions may be computed analytically. In higher dimensions, a numerical approach is required. In this work, we generalize earlier methods that were developed for tight-binding Hamiltonians, and present results for the case of a carbon nanotube.

Electronic device for endosurgical skills training (EDEST): study of reliability.

PubMed

Pagador, J B; Uson, J; Sánchez, M A; Moyano, J L; Moreno, J; Bustos, P; Mateos, J; Sánchez-Margallo, F M

2011-05-01

Minimally Invasive Surgery procedures are commonly used in many surgical practices, but surgeons need specific training models and devices due to its difficulty and complexity. In this paper, an innovative electronic device for endosurgical skills training (EDEST) is presented. A study on reliability for this device was performed. Different electronic components were used to compose this new training device. The EDEST was focused on two basic laparoscopic tasks: triangulation and coordination manoeuvres. A configuration and statistical software was developed to complement the functionality of the device. A calibration method was used to assure the proper work of the device. A total of 35 subjects (8 experts and 27 novices) were used to check the reliability of the system using the MTBF analysis. Configuration values for triangulation and coordination exercises were calculated as 0.5 s limit threshold and 800-11,000 lux range of light intensity, respectively. Zero errors in 1,050 executions (0%) for triangulation and 21 errors in 5,670 executions (0.37%) for coordination were obtained. A MTBF of 2.97 h was obtained. The results show that the reliability of the EDEST device is acceptable when used under previously defined light conditions. These results along with previous work could demonstrate that the EDEST device can help surgeons during first training stages.

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics.

PubMed

Lima, Leandro R F; Hernández, Alexis R; Pinheiro, Felipe A; Lewenkopf, Caio

2016-12-21

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by [Formula: see text], we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

Kinetic and energetic paradigms for dye-sensitized solar cells: moving from the ideal to the real.

PubMed

O'Regan, Brian C; Durrant, James R

2009-11-17

Dye-sensitized solar cells (DSSCs) are photoelectrochemical solar cells. Their function is based on photoinduced charge separation at a dye-sensitized interface between a nanocrystalline, mesoporous metal oxide electrode and a redox electrolyte. They have been the subject of substantial academic and commercial research over the last 20 years, motivated by their potential as a low-cost solar energy conversion technology. Substantial progress has been made in enhancing the efficiency, stability, and processability of this technology and, in particular, the interplay between these technology drivers. However, despite intense research efforts, our ability to identify predictive materials and structure/device function relationships and, thus, achieve the rational optimization of materials and device design, remains relatively limited. A key challenge in developing such predictive design tools is the chemical complexity of the device. DSSCs comprise distinct materials components, including metal oxide nanoparticles, a molecular sensitizer dye, and a redox electrolyte, all of which exhibit complex interactions with each other. In particular, the electrolyte alone is chemically complex, including not only a redox couple (almost always iodide/iodine) but also a range of additional additives found empirically to enhance device performance. These molecular solutes make up typically 20% of the electrolyte by volume. As with most molecular systems, they exhibit complex interactions with both themselves and the other device components (e.g., the sensitizer dye and the metal oxide). Moreover, these interactions can be modulated by solar irradiation and device operation. As such, understanding the function of these photoelectrochemical solar cells requires careful consideration of the chemical complexity and its impact upon device operation. In this Account, we focus on the process by which electrons injected into the nanocrystalline electrode are collected by the external electrical circuit in real devices under operating conditions. We first of all summarize device function, including the energetics and kinetics of the key processes, using an "idealized" description, which does not fully account for much of the chemical complexity of the system. We then go on to consider recent advances in our understanding of the impact of these complexities upon the efficiency of electron collection. These include "catalysis" of interfacial recombination losses by surface adsorption processes and the influence of device operating conditions upon the recombination rate constant and conduction band energy, both attributed to changes in the chemical composition of the interface. We go on to discuss appropriate methodologies for quantifying the efficiency of electron collection in devices under operation. Finally, we show that, by taking into account these advances in our understanding of the DSSC function, we are able to recreate the current/voltage curves of both efficient and degraded devices without any fitting parameters and, thus, gain significant insight into the determinants of DSSC performance.

Benchtop fabrication of three-dimensional reconfigurable microfluidic devices from paper-polymer composite.

PubMed

Han, Yu Long; Wang, Wenqi; Hu, Jie; Huang, Guoyou; Wang, Shuqi; Lee, Won Gu; Lu, Tian Jian; Xu, Feng

2013-12-21

We presented a benchtop technique that can fabricate reconfigurable, three-dimensional (3D) microfluidic devices made from a soft paper-polymer composite. This fabrication approach can produce microchannels at a minimal width of 100 μm and can be used to prototype 3D microfluidic devices by simple bending and stretching. The entire fabrication process can be finished in 2 hours on a laboratory bench without the need for special equipment involved in lithography. Various functional microfluidic devices (e.g., droplet generator and reconfigurable electronic circuit) were prepared using this paper-polymer hybrid microfluidic system. The developed method can be applied in a wide range of standard applications and emerging technologies such as liquid-phase electronics.

Elements configuration of the open lead test circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuzaki, Yumi, E-mail: 14514@sr.kagawa-nct.ac.jp; Ono, Akira

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a testmore » circuit in the past. This paper propose elements configuration of the test circuit.« less

Wearable Fall Detector using Integrated Sensors and Energy Devices

NASA Astrophysics Data System (ADS)

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-11-01

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

Wearable Fall Detector using Integrated Sensors and Energy Devices.

PubMed

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-11-24

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

Simple model of a coherent molecular photocell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca; Bélanger, Marc-André; Mayou, Didier

2016-04-07

Electron transport in molecular electronic devices is often dominated by a coherent mechanism in which the wave function extends from the left contact over the molecule to the right contact. If the device is exposed to light, photon absorption in the molecule might occur, turning the device into a molecular photocell. The photon absorption promotes an electron to higher energy levels and thus modifies the electron transmission probability through the device. A model for such a molecular photocell is presented that minimizes the complexity of the problem while providing a non-trivial description of the device mechanism. In particular, the rolemore » of the molecule in the photocell is investigated. It is described within the Hückel method and the source-sink potential approach [F. Goyer, M. Ernzerhof, and M. Zhuang, J. Chem. Phys. 126, 144104 (2007)] is used to eliminate the contacts in favor of complex-valued potentials. Furthermore, the photons are explicitly incorporated into the model through a second-quantized field. This facilitates the description of the photon absorption process with a stationary state calculation, where eigenvalues and eigenvectors are determined. The model developed is applied to various generic molecular photocells.« less

Analogy of transistor function with modulating photonic band gap in electromagnetically induced grating

PubMed Central

Wang, Zhiguo; Ullah, Zakir; Gao, Mengqin; Zhang, Dan; Zhang, Yiqi; Gao, Hong; Zhang, Yanpeng

2015-01-01

Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing. PMID:26349444

Analogy of transistor function with modulating photonic band gap in electromagnetically induced grating

NASA Astrophysics Data System (ADS)

Wang, Zhiguo; Ullah, Zakir; Gao, Mengqin; Zhang, Dan; Zhang, Yiqi; Gao, Hong; Zhang, Yanpeng

2015-09-01

Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.

Membrane Protein Incorporation into Nano-Bioelectronics: An insight into Rhodopsin Controlled SiNW-FET Devices

NASA Astrophysics Data System (ADS)

Tunuguntla, Ramya

Biological systems use different energy sources to interact with their environments by creating ion gradients, membrane electric potentials, or a proton motive force to accomplish strikingly complex tasks on the nanometer length scale, such as energy harvesting, and whole organism replication. Most of this activity involves a vast arsenal of active and passive ion channels, membrane receptors and ion pumps that mediate complex and precise transport across biological membranes. Despite the remarkable rate of progress exhibited by modern microelectronic devices, they still cannot compete with the efficiency and precision of biological systems on the component level. At the same time, the sophistication of these molecular machines provides an excellent opportunity to use them in hybrid bioelectronic devices where such a combination could deliver enhanced electronic functionality and enable seamless bi-directional interfaces between man-made and biological assemblies. Artificial membrane systems allow researchers to study the structure and function of membrane proteins in a matrix that approximates their natural environment and to integrate these proteins in ex-vivo devices such as electronic biosensors, thin-film protein arrays, or bio-fuel cells. Since most membrane proteins have vectorial functions, both functional studies and applications require effective control over protein orientation within a lipid bilayer. In our work, we have explored the role of the bilayer surface charge in determining transmembrane protein orientation and functionality during formation of proteoliposomes. We reconstituted a model vectorial ion pump, proteorhodopsin, in liposomes of opposite charges and varying charge densities and determined the resultant protein orientation. Antibody-binding assay and proteolysis of proteoliposomes showed physical evidence of preferential orientation, and functional assays verified vectorial nature of ion transport in this system. Our results indicate that the manipulation of lipid composition can indeed control orientation of an asymmetrically charged membrane protein, proteorhodopsin, in liposomes. One-dimensional inorganic nanostructures, which have critical dimensions comparable to the sizes of biological molecules, form an excellent materials platform for building such integrated structures. Researchers already use silicon nanowire-based field effect transistors functionalized with molecular recognition sites in a diverse array of biosensors. In our group, we have been developing a platform for integration of membrane protein functionality and electronic devices using a 1-D phospholipid bilayer device architecture. In these devices, the membrane proteins reside within the lipid bilayer that covers a nanowire channel of a field-effect transistor. This lipid bilayer performs several functions: it shields the nanowire from the solution species; it serves as a native-like environment for membrane proteins and preserves their functionality, integrity, and even vectorality. In this work, we show that a 1-D bilayer device incorporating a rhodopsin proton pump allows us to couple light-driven proton transport to a bioelectronic circuit. We also report that we were able to adapt another distinctive feature of biological signal processing---their widespread use of modifiers, co-factors, and mediator molecules---to regulate and fine-tune the operational characteristics of the bioelectronic device. In our example, we use co-assembly of protein channels and ionophores in the 1-D bilayer to modify the device output levels and response time.

Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics

NASA Technical Reports Server (NTRS)

OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Howard, James W., Jr.; Ladbury, Ray L.; Barth, Janet L.; Kniffin, Scott D.; Seidleck, Christina M.; Marshall, Paul W.; Marshall, Cheryl J.;

Photoisomerization-induced manipulation of single-electron tunneling for novel Si-based optical memory.

PubMed

Hayakawa, Ryoma; Higashiguchi, Kenji; Matsuda, Kenji; Chikyow, Toyohiro; Wakayama, Yutaka

2013-11-13

We demonstrated optical manipulation of single-electron tunneling (SET) by photoisomerization of diarylethene molecules in a metal-insulator-semiconductor (MIS) structure. Stress is placed on the fact that device operation is realized in the practical device configuration of MIS structure and that it is not achieved in structures based on nanogap electrodes and scanning probe techniques. Namely, this is a basic memory device configuration that has the potential for large-scale integration. In our device, the threshold voltage of SET was clearly modulated as a reversible change in the molecular orbital induced by photoisomerization, indicating that diarylethene molecules worked as optically controllable quantum dots. These findings will allow the integration of photonic functionality into current Si-based memory devices, which is a unique feature of organic molecules that is unobtainable with inorganic materials. Our proposed device therefore has enormous potential for providing a breakthrough in Si technology.

A design multifunctional plasmonic optical device by micro ring system

NASA Astrophysics Data System (ADS)

Pornsuwancharoen, N.; Youplao, P.; Amiri, I. S.; Ali, J.; Yupapin, P.

2018-03-01

A multi-function electronic device based on the plasmonic circuit is designed and simulated by using the micro-ring system. From which a nonlinear micro-ring resonator is employed and the selected electronic devices such as rectifier, amplifier, regulator and filter are investigated. A system consists of a nonlinear micro-ring resonator, which is known as a modified add-drop filter and made of an InGaAsP/InP material. The stacked waveguide of an InGaAsP/InP - graphene -gold/silver is formed as a part of the device, the required output signals are formed by the specific control of input signals via the input and add ports. The material and device aspects are reviewed. The simulation results are obtained using the Opti-wave and MATLAB software programs, all device parameters are based on the fabrication technology capability.

Strain-induced tunable negative differential resistance in triangle graphene spirals

NASA Astrophysics Data System (ADS)

Tan, Jie; Zhang, Xiaoming; Liu, Wenguan; He, Xiujie; Zhao, Mingwen

2018-05-01

Using non-equilibrium Green’s function formalism combined with density functional theory calculations, we investigate the significant changes in electronic and transport properties of triangle graphene spirals (TGSs) in response to external strain. Tunable negative differential resistance (NDR) behavior is predicted. The NDR bias region, NDR width, and peak-to-valley ratio can be well tuned by external strain. Further analysis shows that these peculiar properties can be attributed to the dispersion widths of the p z orbitals. Moreover, the conductance of TGSs is very sensitive to the applied stress, which is promising for applications in nanosensor devices. Our findings reveal a novel approach to produce tunable electronic devices based on graphene spirals.

Strain-induced tunable negative differential resistance in triangle graphene spirals.

PubMed

Tan, Jie; Zhang, Xiaoming; Liu, Wenguan; He, Xiujie; Zhao, Mingwen

2018-05-18

Using non-equilibrium Green's function formalism combined with density functional theory calculations, we investigate the significant changes in electronic and transport properties of triangle graphene spirals (TGSs) in response to external strain. Tunable negative differential resistance (NDR) behavior is predicted. The NDR bias region, NDR width, and peak-to-valley ratio can be well tuned by external strain. Further analysis shows that these peculiar properties can be attributed to the dispersion widths of the p z orbitals. Moreover, the conductance of TGSs is very sensitive to the applied stress, which is promising for applications in nanosensor devices. Our findings reveal a novel approach to produce tunable electronic devices based on graphene spirals.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1-50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Active devices based on organic semiconductors for wearable applications.

PubMed

Barbaro, Massimo; Caboni, Alessandra; Cosseddu, Piero; Mattana, Giorgio; Bonfiglio, Annalisa

2010-05-01

Plastic electronics is an enabling technology for obtaining active (transistor based) electronic circuits on flexible and/or nonplanar surfaces. For these reasons, it appears as a perfect candidate to promote future developments of wearable electronics toward the concept of fabrics and garments made by functional (in this case, active electronic) yarns. In this paper, a panoramic view of recent achievements and future perspectives is given.

Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide.

PubMed

Dey, Avishek; Krishnamurthy, Satheesh; Bowen, James; Nordlund, Dennis; Meyyappan, M; Gandhiraman, Ram P

2018-05-23

Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. Here, we introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H 2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Beam Conditioning and Harmonic Generation in Free ElectronLasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charman, A.E.; Penn, G.; Wolski, A.

2004-07-05

The next generation of large-scale free-electron lasers (FELs) such as Euro-XFEL and LCLS are to be devices which produce coherent X-rays using Self-Amplified Spontaneous Emission (SASE). The performance of these devices is limited by the spread in longitudinal velocities of the beam. In the case where this spread arises primarily from large transverse oscillation amplitudes, beam conditioning can significantly enhance FEL performance. Future X-ray sources may also exploit harmonic generation starting from laser-seeded modulation. Preliminary analysis of such devices is discussed, based on a novel trial-function/variational-principle approach, which shows good agreement with more lengthy numerical simulations.

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

NASA Astrophysics Data System (ADS)

Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

2012-09-01

We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

A flexible future for paper-based electronics

NASA Astrophysics Data System (ADS)

Liang, Tongfen; Zou, Xiyue; Mazzeo, Aaron D.

2016-05-01

This paper will review the origins and state of the art in paper-based electronics, suggesting the stage is set for future promising applications. Current interest in paper-based electronics can trace its roots to recent developments in paper-based microfluidics. With a need to improve the reliability and sensitivity of paperbased microfluidics for certain tasks, there were natural efforts to begin embedding sensing electrodes into microfluidic devices. Recognizing the general benefits of paper as an advanced material (e.g., its environmental friendliness, bendable nature, and low cost), efforts in paper-based electronics also began to take a life of their own with demonstrations of transistors, batteries and devices for energy storage, energy harvesting, sensors to improve situational awareness, acoustics, and displays. The state-of-the-art paper-based electronic devices have benefited and will continue to profit from technologies for printing and transferring electronic functionality onto the surfaces of paper-based substrates. Nonetheless, the authors suggest that many future promising applications will go beyond using paper as a carrier/substrate for electronic components to explore tuning of the electrical, mechanical, and chemical properties of the paper itself. With these technical advances, paper-based electronics will move closer to economically viable killer applications.

Electronics for Extreme Environments

NASA Astrophysics Data System (ADS)

Patel, J. U.; Cressler, J.; Li, Y.; Niu, G.

2001-01-01

Most of the NASA missions involve extreme environments comprising radiation and low or high temperatures. Current practice of providing friendly ambient operating environment to electronics costs considerable power and mass (for shielding). Immediate missions such as the Europa orbiter and lander and Mars landers require the electronics to perform reliably in extreme conditions during the most critical part of the mission. Some other missions planned in the future also involve substantial surface activity in terms of measurements, sample collection, penetration through ice and crust and the analysis of samples. Thus it is extremely critical to develop electronics that could reliably operate under extreme space environments. Silicon On Insulator (SOI) technology is an extremely attractive candidate for NASA's future low power and high speed electronic systems because it offers increased transconductance, decreased sub-threshold slope, reduced short channel effects, elimination of kink effect, enhanced low field mobility, and immunity from radiation induced latch-up. A common belief that semiconductor devices function better at low temperatures is generally true for bulk devices but it does not hold true for deep sub-micron SOI CMOS devices with microscopic device features of 0.25 micrometers and smaller. Various temperature sensitive device parameters and device characteristics have recently been reported in the literature. Behavior of state of the art technology devices under such conditions needs to be evaluated in order to determine possible modifications in the device design for better performance and survivability under extreme environments. Here, we present a unique approach of developing electronics for extreme environments to benefit future NASA missions as described above. This will also benefit other long transit/life time missions such as the solar sail and planetary outposts in which electronics is out open in the unshielded space at the ambient space temperatures and always exposed to radiation. Additional information is contained in the original extended abstract.

Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

PubMed

Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

2011-11-09

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

Biomedical Diagnostics Enabled by Integrated Organic and Printed Electronics.

PubMed

Ahmadraji, Termeh; Gonzalez-Macia, Laura; Ritvonen, Tapio; Willert, Andreas; Ylimaula, Satu; Donaghy, David; Tuurala, Saara; Suhonen, Mika; Smart, Dave; Morrin, Aoife; Efremov, Vitaly; Baumann, Reinhard R; Raja, Munira; Kemppainen, Antti; Killard, Anthony J

2017-07-18

Organic and printed electronics integration has the potential to revolutionize many technologies, including biomedical diagnostics. This work demonstrates the successful integration of multiple printed electronic functionalities into a single device capable of the measurement of hydrogen peroxide and total cholesterol. The single-use device employed printed electrochemical sensors for hydrogen peroxide electroreduction integrated with printed electrochromic display and battery. The system was driven by a conventional electronic circuit designed to illustrate the complete integration of silicon integrated circuits via pick and place or using organic electronic circuits. The device was capable of measuring 8 μL samples of both hydrogen peroxide (0-5 mM, 2.72 × 10 -6 A·mM -1 ) and total cholesterol in serum from 0 to 9 mM (1.34 × 10 -8 A·mM -1 , r 2 = 0.99, RSD < 10%, n = 3), and the result was output on a semiquantitative linear bar display. The device could operate for 10 min via a printed battery, and display the result for many hours or days. A mobile phone "app" was also capable of reading the test result and transmitting this to a remote health care provider. Such a technology could allow improved management of conditions such as hypercholesterolemia.

Electronic waste (e-waste): Material flows and management practices in Nigeria

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nnorom, Innocent Chidi; Osibanjo, Oladele

The growth in electrical and electronic equipment (EEE) production and consumption has been exponential in the last two decades. This has been as a result of the rapid changes in equipment features and capabilities, decrease in prices, and the growth in internet use. This creates a large volume of waste stream of obsolete electrical and electronic devices (e-waste) in developed countries. There is high level of trans-boundary movement of these devices as secondhand electronic equipment into developing countries in an attempt to bridge the 'digital divide'. The past decade has witnessed a phenomenal advancement in information and communication technology (ICT)more » in Nigeria, most of which rely on imported secondhand devices. This paper attempts to review the material flow of secondhand/scrap electronic devices into Nigeria, the current management practices for e-waste and the environmental and health implications of such low-end management practices. Establishment of formal recycling facilities, introduction of legislation dealing specifically with e-waste and the confirmation of the functionality of secondhand EEE prior to importation are some of the options available to the government in dealing with this difficult issue.« less

Development of medical electronic devices in the APL space department

NASA Technical Reports Server (NTRS)

Newman, A. L.

1985-01-01

Several electronic devices for automatically correcting specific defects in a body's physiologic regulation and allowing approximately normal functioning are described. A self-injurious behavior inhibiting system (SIBIS) is fastened to the arm of a person with chronic self-injurious behavior patterns. An electric shock is delivered into the arm whenever the device senses above-threshold acceleration of the head such as occur with head-bangers. Sounding a buzzer tone with the shock eventually allows transference of the aversive stimulus to the buzzer so shocks are no longer necessary. A programmable implantable medication system features a solenoid pump placed beneath the skin and refueled by hypodermic needle. The pump functions are programmable and can deliver insulin, chemotherapy mixes and/or pain killers according to a preset schedule or on patient demand. Finally, an automatic implantible defibrillator has four electrodes attached directly to the heart for sensing electrical impulses or emitting them in response to cardiac fibrillation.

Non-Fullerene Electron Acceptors for Use in Organic Solar Cells

PubMed Central

2015-01-01

Conspectus The active layer in a solution processed organic photovoltaic device comprises a light absorbing electron donor semiconductor, typically a polymer, and an electron accepting fullerene acceptor. Although there has been huge effort targeted to optimize the absorbing, energetic, and transport properties of the donor material, fullerenes remain as the exclusive electron acceptor in all high performance devices. Very recently, some new non-fullerene acceptors have been demonstrated to outperform fullerenes in comparative devices. This Account describes this progress, discussing molecular design considerations and the structure–property relationships that are emerging. The motivation to replace fullerene acceptors stems from their synthetic inflexibility, leading to constraints in manipulating frontier energy levels, as well as poor absorption in the solar spectrum range, and an inherent tendency to undergo postfabrication crystallization, resulting in device instability. New acceptors have to address these limitations, providing tunable absorption with high extinction coefficients, thus contributing to device photocurrent. The ability to vary and optimize the lowest unoccupied molecular orbital (LUMO) energy level for a specific donor polymer is also an important requirement, ensuring minimal energy loss on electron transfer and as high an internal voltage as possible. Initially perylene diimide acceptors were evaluated as promising acceptor materials. These electron deficient aromatic molecules can exhibit good electron transport, facilitated by close packed herringbone crystal motifs, and their energy levels can be synthetically tuned. The principal drawback of this class of materials, their tendency to crystallize on too large a length scale for an optimal heterojunction nanostructure, has been shown to be overcome through introduction of conformation twisting through steric effects. This has been primarily achieved by coupling two units together, forming dimers with a large intramolecular twist, which suppresses both nucleation and crystal growth. The generic design concept of rotationally symmetrical aromatic small molecules with extended π orbital delocalization, including polyaromatic hydrocarbons, phthalocyanines, etc., has also provided some excellent small molecule acceptors. In most cases, additional electron withdrawing functionality, such as imide or ester groups, can be incorporated to stabilize the LUMO and improve properties. New calamitic acceptors have been developed, where molecular orbital hybridization of electron rich and poor segments can be judiciously employed to precisely control energy levels. Conformation and intermolecular associations can be controlled by peripheral functionalization leading to optimization of crystallization length scales. In particular, the use of rhodanine end groups, coupled electronically through short bridged aromatic chains, has been a successful strategy, with promising device efficiencies attributed to high lying LUMO energy levels and subsequently large open circuit voltages. PMID:26505279

Irradiation of MOS-FET devices to provide desired logic functions

NASA Technical Reports Server (NTRS)

Danchenko, V.; Schaefer, D. H.

1972-01-01

Gamma, X-ray, electron, or other radiation is used to shift threshold potentials of MOS devices on logic circuits. Before irradiation MOS gates to be shifted are biased positive and other gates are grounded to substrate. Threshold lasts 10 years. Thermal annealing brings circuit back to original configuration.

Giant Electroresistive Ferroelectric Diode on 2DEG

PubMed Central

Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

2015-01-01

Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

Photochromic molecules as building blocks for molecular electronics.

PubMed

Peter, Belser

2010-01-01

Energy and electron transfer processes can be easily induced by a photonic excitation of a donor metal complex ([Ru(bpy)3]2), which is connected via a wire-type molecular fragment to an acceptor metal complex ([Os(bpy)3]2+). The rate constant for the transfer process can be determined by emission measurements of the two connected metal complexes. The system can be modified by incorporation of a switching unit or an interrupter into the wire, influencing the transfer process. Such a molecular device corresponds to an interrupter, mimic the same function applied in molecular electronics. We have used organic switches, which show photochromic properties. By irradiation with light of different wavelengths, the switch changes its functionality by a photochemical reaction from an OFF- to an ON-state and vice versa. The ON- respectively OFF-state is manifested by a color change but also in different conductivity properties for energy and electron transfer processes. Therefore, the mentioned molecular device can work as a simple interrupter, controlling the rate of the transfer processes.

Accelerated life-test methods and results for implantable electronic devices with adhesive encapsulation.

PubMed

Huang, Xuechen; Denprasert, Petcharat May; Zhou, Li; Vest, Adriana Nicholson; Kohan, Sam; Loeb, Gerald E

2017-09-01

We have developed and applied new methods to estimate the functional life of miniature, implantable, wireless electronic devices that rely on non-hermetic, adhesive encapsulants such as epoxy. A comb pattern board with a high density of interdigitated electrodes (IDE) could be used to detect incipient failure from water vapor condensation. Inductive coupling of an RF magnetic field was used to provide DC bias and to detect deterioration of an encapsulated comb pattern. Diodes in the implant converted part of the received energy into DC bias on the comb pattern. The capacitance of the comb pattern forms a resonant circuit with the inductor by which the implant receives power. Any moisture affects both the resonant frequency and the Q-factor of the resonance of the circuitry, which was detected wirelessly by its effects on the coupling between two orthogonal RF coils placed around the device. Various defects were introduced into the comb pattern devices to demonstrate sensitivity to failures and to correlate these signals with visual inspection of failures. Optimized encapsulation procedures were validated in accelerated life tests of both comb patterns and a functional neuromuscular stimulator under development. Strong adhesive bonding between epoxy and electronic circuitry proved to be necessary and sufficient to predict 1 year packaging reliability of 99.97% for the neuromuscular stimulator.

Electronic properties of T graphene-like C-BN sheets: A density functional theory study

NASA Astrophysics Data System (ADS)

Majidi, R.

2015-11-01

We have used density functional theory to study the electronic properties of T graphene-like C, C-BN and BN sheets. The planar T graphene with metallic property has been considered. The results show that the presence of BN has a considerable effect on the electronic properties of T graphene. The T graphene-like C-BN and BN sheets show semiconducting properties. The energy band gap is increased by enhancing the number of BN units. The possibility of opening and controlling band gap opens the door for T graphene in switchable electronic devices.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Properties and applications of chemically functionalized graphene.

PubMed

Craciun, M F; Khrapach, I; Barnes, M D; Russo, S

2013-10-23

The vast and yet largely unexplored family of graphene materials has great potential for future electronic devices with novel functionalities. The ability to engineer the electrical and optical properties in graphene by chemically functionalizing it with a molecule or adatom is widening considerably the potential applications targeted by graphene. Indeed, functionalized graphene has been found to be the best known transparent conductor or a wide gap semiconductor. At the same time, understanding the mechanisms driving the functionalization of graphene with hydrogen is proving to be of fundamental interest for energy storage devices. Here we discuss recent advances on the properties and applications of chemically functionalized graphene.

Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.

PubMed

Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B-H; Bao, Zhenan

2018-03-01

Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

Skin electronics from scalable fabrication of an intrinsically stretchable transistor array

NASA Astrophysics Data System (ADS)

Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R.; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M.; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B.-H.; Bao, Zhenan

2018-03-01

Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable—like human skin—would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

NASA Astrophysics Data System (ADS)

Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

2016-08-01

Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

Hydrogen doping in HfO{sub 2} resistance change random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

2016-01-25

The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

Nano-enabled sensors, electronics and energy source on polymer, paper and thread substrates

NASA Astrophysics Data System (ADS)

Mostafalu, Pooria

Over the past decades, design and development of portable devices for monitoring of biomarkers especially for at risk patients is receiving considerable attention. These devices are either single use diagnostic platforms, wearable on body or on fabric, or they are implanted close to the tissue and organ that it monitors and cures. Sensors, energy sources, and data acquisition devices are the main components of a such monitoring platform. Sensors collect the information using bio-recognition tools such as enzymes and antibodies. Then, the transducers (electrodes, fluorophore, etc) convert it to the appropriate format, for instance electrical and optical signals. After that, data acquisition system amplifies and digitizes the signal and transfers the data to the recording instruments for further processing. Moreover, energy sources are necessary for powering the sensors and electronics. In wearable and implantable applications, these devices need to be flexible, light weight and biocompatible, and their performance should be similar to their rigid counterparts. In this dissertation we address these requirement for wearable and implantable devices. We showed integrated sensors, electronics, and energy sources on flexible polymers, paper, and thread. These devices provide many advantages for monitoring of the physiological condition of a patient and treatment accordingly. Real-time capability of the platform was enabled using wireless telemetry. One of the major innovations of this dissertation is the use of thread as a substrate for making medical diagnostic devices. While conventional substrates (glass, silicon, polyimide, PDMS etc) hold great promise for making wearable and implantable devices, their overall structure and form has remained essentially two dimensional, limiting their function to tissue surfaces such as skin. However, the ability to integrate functional components such as sensors, actuators, and electronics in a way that they penetrate multiple layers of tissues in a 3D topology would be a significant surgical advance. We have devised an integrated thread-based diagnostic (TDD) system with the ability to measure physical (strain and temperature) and chemical (pH and glucose) markers in the body in vivo. Such device was made from threads, which have been widely used in the apparel industry and is readily available as a low-cost biocompatible material.

Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Du, Xiang

As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2CO3) and MoO3, respectively. Cs2CO3 was found to strongly electron dope black phosphorus. The electron mobility of black phosphorus was significantly enhanced to ˜27 cm2V-1s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron transport behavior. In contrast, MoO3 decoration demonstrated a giant hole doping effect. In situ PES characterization confirms the interfacial charge transfer between black phosphorus and doping layers. This doping can also modulate the Schottky junctions formed between metal contacts and black phosphorus flakes, and hence to enhance the responsivity of black phosphorus based photodetectors. These findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics. Following the same surface transfer doping technique, I will demonstrate a remarkable performance enhancement of graphene/Si Schottky junction based self-powered photodetectors via surface modification with MoO3 thin film. It was found that the photocurrent responsivity of MoO3 doped graphene/Si photodetectors was highly increased under a wide spectrum of illuminated light from ultraviolet to near infrared. The current on-off ratio reached up to ˜104 under illumination of 500 nm light with intensity of ˜62 muWcm-2. More importantly, the external quantum efficiency of graphene/Si devices was significantly enhanced up to ˜80% by almost four times in the visible light region after MoO3 functionalization. The largely improved photodetecting performance originates from the increased Schottky barrier height at the graphene/Si interface as well as the reduced series resistance after MoO3 modification, which was further corroborated by the in situ PES and electrical transport characterizations. These observations promise a simple method to effectively modify the graphene/Si Schottky junction based self-powered photodetectors and thus significantly enhance their photodetecting performance. After discussion of the first surface functionalization method, next I will introduce the second approach which is H2 annealing, to greatly extend the photoresponse range of single MoO3 nanobelt based photodetector from UV to visible light by introducing substantial gap states. After annealing, the conductance of MoO3 nanobelt was largely enhanced; at the same time, the photodetector possessed wide visible spectrum response. As corroborated by in situ PES investigations, such strong wide spectrum photoresponse arises from the largely enriched oxygen vacancies and gap states in MoO3 nanobelt after H2 annealing. These results open up a new avenue to extend the wide bandgap metal oxide nanomaterials based optoelectronics devices with efficient visible light response through surface modification, i.e. the introduction of the high density of carefully engineered gap states.

Development of an electronic manometer for intrapleural pressure monitoring.

PubMed

Krenke, Rafał; Guć, Maciej; Grabczak, Elżbieta Magdalena; Michnikowski, Marcin; Pałko, Krzysztof Jakub; Chazan, Ryszarda; Gólczewski, Tomasz

2011-01-01

Measurement of intrapleural pressure is useful during various pleural procedures. However, a pleural manometer is rarely available. The aim of this study was to (1) construct an electronic pleural manometer, (2) assess the accuracy of the measurements done with the new device, (3) calculate the costs of the manometer construction and (4) perform an initial evaluation of the device in a clinical setting. Only widely accessible elements were used to construct the device. A vascular pressure transducer was used to transform pressure into an electronic signal. Reliability of the measurements was evaluated in a laboratory setting in a prospective, single-blind manner by comparing the results with those measured by a water manometer. Functionality of the device was assessed during therapeutic thoracentesis. The cost of the new pleural manometer was calculated. We built a small, portable device which can precisely measure intrapleural pressure. The measurement results showed very high agreement with those registered with a water manometer (r = 0.999; p < 0.001). The initial evaluation of the electronic manometer during therapeutic thoracentesis showed it was easy to use. The total time needed for 6 measurements after withdrawal of different volumes of pleural fluid in 1 patient did not exceed 6 min. The total cost of the device was calculated to be <2,000 EUR. In the face of very limited offer of commercially available pleural manometers, it is possible to successfully construct a self-made, reliable, electronic pleural manometer at modest costs. The device is easy to use and enables data display and storage in the personal computer. Copyright © 2011 S. Karger AG, Basel.

Electronic structure and transport properties of zigzag MoS2 nanoribbons

NASA Astrophysics Data System (ADS)

Sharma, Uma Shankar; Shah, Rashmi; Mishra, Pankaj Kumar

2018-05-01

In present study, electronic and transport properties of the 8zigzag MoS2 nanoribbons (8ZMoS2NRs) are investigated using ab-initio density functional theory [DFT]. The calculations were performed using nonequilibrium Green's function (NEGF) formalism based on DFT as implemented in the TranSiesta code. Results show that the defect can introduces few extra states into the energy gap, which lead nanoribbons to reveal a metallic characteristic. The voltage-current (VI) graph of 8ZMoS2NRs show a threshold current increases after introducing Mo defect in the devices. when introducing a Mo vacancy under low biases, the current will be suppressed—whereas under high biases, the current through the defected 8ZMoS2NRs will increases rapidly, due to the other channel being opened, that make possibility of 8ZMoS2NRs application in electronic devices such as voltage regulation.

Design, fabrication and characterization of a double layer solid oxide fuel cell (DLFC)

NASA Astrophysics Data System (ADS)

Wang, Guangjun; Wu, Xiangying; Cai, Yixiao; Ji, Yuan; Yaqub, Azra; Zhu, Bin

2016-11-01

A double layer solid oxide fuel cell (DLSOFC) without using the electrolyte (layer) has been designed by integrating advantages of positive electrode material of lithium ion battery(LiNi0.8Co0.15Al0.05O2) and oxygen-permeable membranes material (trace amount cobalt incorporated terbium doped ceria, TDC + Co) based on the semiconductor physics principle. Instead of using an electrolyte layer, the depletion layer between the anode and cathode served as an electronic insulator to block the electrons but to maintain the electrolyte function for ionic transport. Thus the device with two layers can realize the function of SOFC and at the same time avoids the electronic short circuiting problem. Such novel DLFC showed good performance at low temperatures, for instance, a maximum power density of 230 mWcm-2 was achieved at 500 °C. The working principle of the new device is presented.

Thermoelectric efficiency of nanoscale devices in the linear regime

NASA Astrophysics Data System (ADS)

Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

2016-12-01

We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

Conduction at domain walls in oxide multiferroics

NASA Astrophysics Data System (ADS)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Conduction at domain walls in oxide multiferroics.

PubMed

Seidel, J; Martin, L W; He, Q; Zhan, Q; Chu, Y-H; Rother, A; Hawkridge, M E; Maksymovych, P; Yu, P; Gajek, M; Balke, N; Kalinin, S V; Gemming, S; Wang, F; Catalan, G; Scott, J F; Spaldin, N A; Orenstein, J; Ramesh, R

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

CIRCUS--A digital computer program for transient analysis of electronic circuits

NASA Technical Reports Server (NTRS)

Moore, W. T.; Steinbert, L. L.

1968-01-01

Computer program simulates the time domain response of an electronic circuit to an arbitrary forcing function. CIRCUS uses a charge-control parameter model to represent each semiconductor device. Given the primary photocurrent, the transient behavior of a circuit in a radiation environment is determined.

Tuning the Seebeck effect in C60-based hybrid thermoelectric devices through temperature-dependent surface polarization and thermally-modulated interface dipoles.

PubMed

Liu, Yuchun; Xu, Ling; Zhao, Chen; Shao, Ming; Hu, Bin

2017-06-07

Fullerene (C 60 ) is an important n-type organic semiconductor with high electron mobility and low thermal conductivity. In this work, we report the experimental results on the tunable Seebeck effect of C 60 hybrid thin-film devices by adopting different oxide layers. After inserting n-type high-dielectric constant titanium oxide (TiO x ) and zinc oxide (ZnO) layers, we observed a significantly enhanced n-type Seebeck effect in oxide/C 60 hybrid devices with Seebeck coefficients of -5.8 mV K -1 for TiO x /C 60 and -2.08 mV K -1 for ZnO/C 60 devices at 100 °C, compared with the value of -400 μV K -1 for the pristine C 60 device. However, when a p-type nickel oxide (NiO) layer is inserted, the C 60 hybrid devices show a p-type to n-type Seebeck effect transition when the temperature increases. The remarkable Seebeck effect and change in Seebeck coefficient in different oxide/C 60 hybrid devices can be attributed to two reasons: the temperature-dependent surface polarization difference and thermally-dependent interface dipoles. Firstly, the surface polarization difference due to temperature-dependent electron-phonon coupling can be enhanced by inserting an oxide layer and functions as an additional driving force for the Seebeck effect development. Secondly, thermally-dependent interface dipoles formed at the electrode/oxide interface play an important role in modifying the density of interface states and affecting the charge diffusion in hybrid devices. The surface polarization difference and interface dipoles function in the same direction in hybrid devices with TiO x and ZnO dielectric layers, leading to enhanced n-type Seebeck effect, while the surface polarization difference and interface dipoles generate the opposite impact on electron diffusion in ITO/NiO/C 60 /Al, leading to a p-type to n-type transition in the Seebeck effect. Therefore, inserting different oxide layers could effectively modulate the Seebeck effect of C 60 -based hybrid devices through the surface polarization difference and thermally-dependent interface dipoles, which represents an effective approach to tune the vertical Seebeck effect in organic functional devices.

Rapid localized deactivation of self-assembled monolayers by propagation-controlled laser-induced plasma and its application to self-patterning of electronics and biosensors

NASA Astrophysics Data System (ADS)

Kim, Jongsu; Kwon, Seung-Gab; Back, Seunghyun; Kang, Bongchul

2018-03-01

We present a novel laser-induced surface treatment process to rapidly control the spatial wettabilities of various functional solutions with submicron to micron resolutions. Ultrathin hydrophobic self-assembled monolayers (SAMs) that little absorb typical laser lights due to short penetration depth were selectively deactivated by instantaneous interaction with laser-induced metallic plasmas. The spatial region of the deactivated SAM, which corresponds to process resolution, is adjustable by controlling the spatial propagation of the plasma. This method leads to the parallel formation of hydrophilic functional solutions on glass substrates with a minimum resolution on the submicron scale. To show its feasibility in device engineering fields, this method was applied to the cost-effective fabrication of electronics and biosensors. Rapid self-patterning of electronic and biological functional solutions (silver nanoparticle solution and streptavidin protein solution) was successfully realized by selective deactivation of two different SAMs (tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) for electronics and the hetero-hybrid SAM (octadecyltrichlorosilane (OTS)/2-[methoxy(polyethyleneoxy)propyl] trichlorosilane (PEG)) for biosensors). As a result, this method can be exploited for the rapid and low-cost fabrication of various thin film devices such as electronics, biosensors, energy, displays, and photonics.

Smallest Nanoelectronic with Atomic Devices with Precise Structures

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

2000-01-01

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

NASA Astrophysics Data System (ADS)

Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

2016-05-01

Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

Multi-Functional UV-Visible-IR Nanosensors Devices and Structures

DTIC Science & Technology

2015-04-29

Dual-Gate MOSFET System, Proceedings of the International Workshop on Computational Electronics, Nara, Japan, Society of Micro- and Nanoelectronics ...International Workshop on Computational Electronics, Nara, Japan, Society of Micro- and Nanoelectronics , 216-217 (2013); ISBN 978-3-901578-26-7 M. S...Raman Spectroscopy, Proceedings of the International Workshop on Computational Electronics, Nara, Japan, Society of Micro- and Nanoelectronics , 198

A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches.

PubMed

Sekitani, Tsuyoshi; Takamiya, Makoto; Noguchi, Yoshiaki; Nakano, Shintaro; Kato, Yusaku; Sakurai, Takayasu; Someya, Takao

2007-06-01

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides.

PubMed

Zhao, Pei; Li, Jianwei; Jin, Hao; Yu, Lin; Huang, Baibiao; Ying, Dai

2018-04-18

Giant tunnel magnetoresistance (TMR) and perfect spin-injection efficiency (SIE) are extremely significant for modern spintronic devices. Quantum transport properties in a two-dimensional (2D) VS2/MoS2/VS2 magnetic tunneling junction (MTJ) are investigated theoretically within the framework of density functional theory combining with the non-equilibrium Green's functions (DFT-NEGF) method. Our results indicate that the designed MTJ exhibits a TMR with a value up to 4 × 103, which can be used as a switch of spin-electron devices. And due to the huge barrier for spin-down transport, the spin-down electrons could hardly cross the central scattering region, thus achieving a perfect SIE. Furthermore, we also explore for the effect of bias voltage on the TMR and SIE. We find that the TMR increases with the increasing bias voltage, and the SIE is robust against either bias or gate voltage in MTJs, which can serve as effective spin filter devices. Our results can not only give fresh impetus to the research community to build MTJs but also provide potential materials for spintronic devices.

Toward the development of portable miniature intelligent electronic color identification devices

NASA Astrophysics Data System (ADS)

Nicolau, Dan V., Jr.; Livingston, Peter; Jahshan, David; Evans, Rob

2004-03-01

The identification and differentiation of colours is a relatively problematic task for colour-impaired and partially vision-impaired persons and an impossible one for completely blind. In various contexts, this leads to a loss of independence or an increased risk of harm. The identification of colour using optoelectronic devices, on the other hand, can be done precisely and inexpensively. Additionally, breakthroughs in miniaturising and integrating colour sensors into biological systems may lead to significant advances in electronic implants for alleviating blindness. Here we present a functional handheld device developed for the identification of colour, intended for use by the vision-impaired. We discuss the features and limitations of the device and describe in detail one target application - the identification of different banknote denominations by the blind.

Test strategies for industrial testers for converter controls equipment

NASA Astrophysics Data System (ADS)

Oleniuk, P.; Di Cosmo, M.; Kasampalis, V.; Nisbet, D.; Todd, B.; Uznański, S.

2017-04-01

Power converters and their controls electronics are key elements for the operation of the CERN accelerator complex, having a direct impact on its availability. To prevent early-life failures and provide means to verify electronics, a set of industrial testers is used throughout the converters controls electronics' life cycle. The roles of the testers are to validate mass production during the manufacturing phase and to provide means to diagnose and repair failed modules that are brought back from operation. In the converter controls electronics section of the power converters group in the technology department of CERN (TE/EPC/CCE), two main test platforms have been adopted: a PXI platform for mixed analogue-digital functional tests and a JTAG Boundary-Scan platform for digital interconnection and functional tests. Depending on the functionality of the device under test, the appropriate test platforms are chosen. This paper is a follow-up to results presented at the TWEPP 2015 conference, adding the boundary scan test platform and the first results from exploitation of the test system. This paper reports on the test software, hardware design and test strategy applied for a number of devices that has resulted in maximizing test coverage and minimizing test design effort.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

2011-01-01

We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accuratelymore » yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.« less

Flexible power fabrics made of carbon nanotubes for harvesting thermoelectricity.

PubMed

Kim, Suk Lae; Choi, Kyungwho; Tazebay, Abdullah; Yu, Choongho

2014-03-25

Thermoelectric energy conversion is very effective in capturing low-grade waste heat to supply electricity particularly to small devices such as sensors, wireless communication units, and wearable electronics. Conventional thermoelectric materials, however, are often inadequately brittle, expensive, toxic, and heavy. We developed both p- and n-type fabric-like flexible lightweight materials by functionalizing the large surfaces and junctions in carbon nanotube (CNT) mats. The poor thermopower and only p-type characteristics of typical CNTs have been converted into both p- and n-type with high thermopower. The changes in the electronic band diagrams of the CNTs were experimentally investigated, elucidating the carrier type and relatively large thermopower values. With our optimized device design to maximally utilize temperature gradients, an electrochromic glucose sensor was successfully operated without batteries or external power supplies, demonstrating self-powering capability. While our fundamental study provides a method of tailoring electronic transport properties, our device-level integration shows the feasibility of harvesting electrical energy by attaching the device to even curved surfaces like human bodies.

Flexible piezoelectric energy harvesting from jaw movements

NASA Astrophysics Data System (ADS)

Delnavaz, Aidin; Voix, Jérémie

2014-10-01

Piezoelectric fiber composites (PFC) represent an interesting subset of smart materials that can function as sensor, actuator and energy converter. Despite their excellent potential for energy harvesting, very few PFC mechanisms have been developed to capture the human body power and convert it into an electric current to power wearable electronic devices. This paper provides a proof of concept for a head-mounted device with a PFC chin strap capable of harvesting energy from jaw movements. An electromechanical model based on the bond graph method is developed to predict the power output of the energy harvesting system. The optimum resistance value of the load and the best stretch ratio in the strap are also determined. A prototype was developed and tested and its performances were compared to the analytical model predictions. The proposed piezoelectric strap mechanism can be added to all types of head-mounted devices to power small-scale electronic devices such as hearing aids, electronic hearing protectors and communication earpieces.

Energy storage apparatus

NASA Technical Reports Server (NTRS)

Studer, P. A.; Evans, H. E. (Inventor)

1978-01-01

A high efficiency, flywheel type energy storage device which comprises an electronically commutated d.c. motor/generator unit having a massive flywheel rotor magnetically suspended around a ring shaped stator is presented. During periods of low energy demand, the storage devices were operated as a motor, and the flywheel motor was brought up to operating speed. Energy was drawn from the device functioning as a generator as the flywheel rotor rotated during high energy demand periods.

A theoretical study for electronic and transport properties of covalent functionalized MoS2 monolayer

NASA Astrophysics Data System (ADS)

Gao, Lijuan; Yang, Zhao-Di; Zhang, Guiling

2017-06-01

The geometries, electronic and electron transport properties of a series of functionalized MoS2 monolayers were investigated using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. n-Propyl, n-trisilicyl, phenyl, p-nitrophenyl and p-methoxyphenyl are chosen as electron-donating groups. The results show covalent functionalization with electron-donating groups could make a transformation from typical semiconducting to metallic properties for appearance of midgap level across the Fermi level (Ef). The calculations of transport properties for two-probe devices indicate that conductivities of functionalized systems are obviously enhanced relative to pristine MoS2 monolayer. Grafted groups contribute to the major transport path and play an important role in enhancing conductivity. The NDR effect is found. The influence of grafted density is also studied. Larger grafted density leads to wider bandwidth of midgap level, larger current response of I-V curves and larger current difference between peak and valley.

Nonadiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density-Functional Theory

NASA Astrophysics Data System (ADS)

Dittmann, Niklas; Splettstoesser, Janine; Helbig, Nicole

2018-04-01

We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb interaction and tunnel coupling to an adjacent lead in time-dependent density-functional theory. Based on this system, we develop a time-nonlocal exchange-correlation potential by exploiting analogies with quantum-transport theory. The time nonlocality manifests itself in a dynamical potential step. We explicitly link the time evolution of the dynamical step to physical relaxation timescales of the electron dynamics. Finally, we discuss prospects for simulations of larger mesoscopic systems.

Nonadiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density-Functional Theory.

PubMed

Dittmann, Niklas; Splettstoesser, Janine; Helbig, Nicole

2018-04-13

We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb interaction and tunnel coupling to an adjacent lead in time-dependent density-functional theory. Based on this system, we develop a time-nonlocal exchange-correlation potential by exploiting analogies with quantum-transport theory. The time nonlocality manifests itself in a dynamical potential step. We explicitly link the time evolution of the dynamical step to physical relaxation timescales of the electron dynamics. Finally, we discuss prospects for simulations of larger mesoscopic systems.

Safety and Efficacy of the BrainPort V100 Device in Individuals Blinded by Traumatic Injury

DTIC Science & Technology

2016-12-01

the functional performance of the BrainPort® V200 device, a non-surgical, FDA approved, sensory substitution system, in persons who are profoundly...The BrainPort V200 device is a wearable, non-surgical, FDA approved, prosthetic device intended for people who are profoundly blind. The BrainPort...BrainPort V200 electronic vision aid (described previously) has been developed under this research. FDA clearance to market the V200 in the US is expected

Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

NASA Astrophysics Data System (ADS)

Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad

2017-03-01

Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.

Soft electronics for soft robotics

NASA Astrophysics Data System (ADS)

Kramer, Rebecca K.

2015-05-01

As advanced as modern machines are, the building blocks have changed little since the industrial revolution, leading to rigid, bulky, and complex devices. Future machines will include electromechanical systems that are soft and elastically deformable, lending them to applications such as soft robotics, wearable/implantable devices, sensory skins, and energy storage and transport systems. One key step toward the realization of soft systems is the development of stretchable electronics that remain functional even when subject to high strains. Liquid-metal traces embedded in elastic polymers present a unique opportunity to retain the function of rigid metal conductors while leveraging the deformable properties of liquid-elastomer composites. However, in order to achieve the potential benefits of liquid-metal, scalable processing and manufacturing methods must be identified.

First-principles investigation on transport properties of NiO monowire-based molecular device

NASA Astrophysics Data System (ADS)

Chandiramouli, R.; Sriram, S.

2014-08-01

The electronic transport properties of novel NiO monowire connected to the gold electrodes are investigated using density functional theory combined with nonequilibrium Green's functions formalism. The densities of states of the monowire under various bias conditions are discussed. The transport properties are discussed in terms of the transmission spectrum and current-voltage characteristics of NiO monowire. The transmission pathways provide the insight to the transmission of electrons along the monowire. With different bias voltages, current in the order of few microampere flows across the monowire. The applied voltage controls the flow of current through the monowire, which can be used to control the current efficiently in the low order of magnitude in the molecular device.

Topics in Nanophotonic Devices for Nitrogen-Vacancy Color Centers in Diamond

ERIC Educational Resources Information Center

Babinec, Thomas Michael

2012-01-01

Recently, developments in novel and high-purity materials allow for the presence of a single, solitary crystalline defect to define the electronic, magnetic, and optical functionality of a device. The discrete nature of the active dopant, whose properties are defined by a quantum mechanical description of its structure, enables radically new…

Portable Technology Comes of Age

ERIC Educational Resources Information Center

Wangemann, Paul; Lewis, Nina; Squires, David A.

2003-01-01

The PDA was originally conceived of as a portable handheld electronic device that provided a user with a tool to organize his or her life through easy access to a personal calendar, daily planner, and address book. Over the years, these devices have expanded to include many new functions, which have helped more applications in diverse fields. This…

10 CFR 431.322 - Definitions concerning metal halide lamp ballasts and fixtures.

Code of Federal Regulations, 2014 CFR

2014-01-01

... main functions. Ballast means a device used with an electric discharge lamp to obtain necessary circuit... mode. Electronic ballast means a device that uses semiconductors as the primary means to control lamp..., and does not generally contain an igniter but instead starts lamps with high ballast open circuit...

10 CFR 431.322 - Definitions concerning metal halide lamp ballasts and fixtures.

Code of Federal Regulations, 2012 CFR

2012-01-01

... main functions. Ballast means a device used with an electric discharge lamp to obtain necessary circuit... mode. Electronic ballast means a device that uses semiconductors as the primary means to control lamp..., and does not generally contain an igniter but instead starts lamps with high ballast open circuit...

10 CFR 431.322 - Definitions concerning metal halide lamp ballasts and fixtures.

Code of Federal Regulations, 2013 CFR

2013-01-01

... main functions. Ballast means a device used with an electric discharge lamp to obtain necessary circuit... mode. Electronic ballast means a device that uses semiconductors as the primary means to control lamp..., and does not generally contain an igniter but instead starts lamps with high ballast open circuit...

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

NASA Astrophysics Data System (ADS)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

Using Consumer Electronics and Apps in Industrial Environments - Development of a Framework for Dynamic Feature Deployment and Extension by Using Apps on Field Devices

NASA Astrophysics Data System (ADS)

Schmitt, Mathias

2014-12-01

The aim of this paper is to give a preliminary insight regarding the current work in the field of mobile interaction in industrial environments by using established interaction technologies and metaphors from the consumer goods industry. The major objective is the development and implementation of a holistic app-framework, which enables dynamic feature deployment and extension by using mobile apps on industrial field devices. As a result, field device functionalities can be updated and adapted effectively in accordance with well-known appconcepts from consumer electronics to comply with the urgent requirements of more flexible and changeable factory systems of the future. In addition, a much more user-friendly and utilizable interaction with field devices can be realized. Proprietary software solutions and device-stationary user interfaces can be overcome and replaced by uniform, cross-vendor solutions

Electronic control of gene expression and cell behaviour in Escherichia coli through redox signalling

NASA Astrophysics Data System (ADS)

Tschirhart, Tanya; Kim, Eunkyoung; McKay, Ryan; Ueda, Hana; Wu, Hsuan-Chen; Pottash, Alex Eli; Zargar, Amin; Negrete, Alejandro; Shiloach, Joseph; Payne, Gregory F.; Bentley, William E.

2017-01-01

The ability to interconvert information between electronic and ionic modalities has transformed our ability to record and actuate biological function. Synthetic biology offers the potential to expand communication `bandwidth' by using biomolecules and providing electrochemical access to redox-based cell signals and behaviours. While engineered cells have transmitted molecular information to electronic devices, the potential for bidirectional communication stands largely untapped. Here we present a simple electrogenetic device that uses redox biomolecules to carry electronic information to engineered bacterial cells in order to control transcription from a simple synthetic gene circuit. Electronic actuation of the native transcriptional regulator SoxR and transcription from the PsoxS promoter allows cell response that is quick, reversible and dependent on the amplitude and frequency of the imposed electronic signals. Further, induction of bacterial motility and population based cell-to-cell communication demonstrates the versatility of our approach and potential to drive intricate biological behaviours.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

PubMed Central

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

2013-01-01

A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

Reliability of III-V electronic devices -- the defects that cause the trouble

NASA Astrophysics Data System (ADS)

Pantelides, Sokrates T.

2012-02-01

Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies [1] in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). This work was done in collaboration with R.D. Schrimpf, D.M. Fleetwood, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, and B.R. Tuttle. Devices were provided by D.F. Brown, J. Speck and U. Mishra, and by J. Bergman and B. Brar. [4pt] [1] Y. S. Puzyrev et al., Appl. Phys. Lett. 96, 053505 (2010); T. Roy et al., Appl. Phys. Lett. 96, 133503 (2010); X. Shen et al., J. Appl. Phys. 108, 114505 (2010).

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Wearable Fall Detector using Integrated Sensors and Energy Devices

PubMed Central

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-01-01

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare. PMID:26597423

A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.

PubMed

Zhou, Liang; Abraham, Adam C; Tang, Simon Y; Chakrabartty, Shantanu

2016-12-01

Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered monitoring of mechanical activity in biomechanical implants and structures. Previously reported p-HEI devices operate by harvesting energy from a piezoelectric transducer to generate current and voltage references which are then used for initiating and controlling the process of hot-electron injection. As a result, the minimum energy required to activate the device is limited by the power requirements of the reference circuits. In this paper we present a p-HEI device that operates by directly exploiting the self-limiting capability of an energy transducer when driving the process of hot-electron injection in a pMOS floating-gate transistor. As a result, the p-HEI device can activate itself at input power levels less than 5 nW. Using a prototype fabricated in a 0.5- [Formula: see text] bulk CMOS process we validate the functionality of the proposed injector and show that for a fixed input power, its dynamics is quasi-linear with respect to time. The paper also presents measurement results using a cadaver phantom where the fabricated p-HEI device has been integrated with a piezoelectric transducer and is used for self-powered monitoring of mechanical activity.

Self-Assembly of Nanostructured Electronic Devices (454th Brookhaven Lecture)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Charles

2009-12-16

Given suitable atmospheric conditions, water vapor from the air will crystallize into beautiful structures: snowflakes. Nature provides many other examples of spontaneous organization of materials into regular patterns, which is a process known as self-assembly. Since self-assembly works at all levels, it can be a useful tool for organizing materials on the nanometer scale. In particular, self-assembly provides a precise method for designing materials with improved electronic properties, thereby enabling advances in semiconductor electronics and solar devices. On Wednesday, December 16, at 4 p.m. in Berkner Hall, Charles Black of the Center for Functional Nanomaterials (CFN) will explore this topicmore » during the 454th Brookhaven Lecture, entitled “Self-Assembly of Nanostructured Electronic Devices.” Refreshments will be offered before and after the lecture. To attend this open-to-the-public event, visitors to the Lab ages 16 and older must present photo ID at the Main Gate. During this talk, Dr. Black will discuss examples of how self-assembly is being integrated into semiconductor microelectronics, as advances in the ability to define circuit elements at higher resolution have fueled more than 40 years of performance improvements. Self-assembly also promises advances in the performance of solar devices; thus he will describe his group’s recent results with nanostructured photovoltaic devices.« less

Adsorption of NO2 molecules on armchair phosphorene nanosheet for nano sensor applications - A first-principles study.

PubMed

Nagarajan, V; Chandiramouli, R

2017-08-01

The electronic and NO 2 adsorption properties of hydrogenated armchair phosphorene nanosheet device is investigated through density functional theory (DFT) and non-equilibrium Green's function method (NEGF). The armchair phosphorene nanosheet is used for the detection of NO 2 gas in phosphorene molecular device. The DOS spectrum demonstrates the change in peak maxima due to transfer of electrons between NO 2 gas and phosphorene base material. The change in the peak amplitude is observed along the valance band as well as in the conduction band in the transmission spectrum of phosphorene device. I-V characteristics support the change in the current upon adsorption of NO 2 gas molecule on phosphorene molecular device. Using formation energy, structural stability of phosphorene nanosheet has been studied. The adsorption properties of NO 2 on phosphorene nanosheet have also been investigated with the help of adsorption energy, Mulliken charge and Bader charge analysis. In order to ascertain the selectivity of NO 2 gas along phosphorene molecular device in the ambient condition, the adsorption behavior of O 2 and CO 2 is also studied. The findings of the present work confirm that phosphorene molecular device can be used as a NO 2 gas sensor and also the influence of Al substitution in phosphorene nanosheet device is explored and reported. Copyright © 2017 Elsevier Inc. All rights reserved.

Organic field effect transistor composed by fullerene C60 and heterojunctions

NASA Astrophysics Data System (ADS)

Vasconcelos, Railson C.; Aleixo, Vicente F. P.; Del Nero, Jordan

2017-02-01

We present a study of the complex electronic behavior of a fullerene (C60) molecule attached to six leads (heterojunctions), which works as a three-dimension rectifier. In addition, we confirmed that the fullerene works not only as an electron donor, but also as barrier and transport channel to electrons through the molecule. Moreover, when the phenylpropanodinilla (PPP) lead is orthogonally subjected to bias voltage, the charge distribution and the current displays regions of saturation and resonance similar to semiconductor devices. In order to understand the electronic transport in the molecule, we applied non-equilibrium green function (NEGF) method and performed Fowler-Nordheim (FN) and Millikan-Lauritsen (ML) analyses. The ML curves proved to be sufficient to describe the FN characteristics. In this work, we report the theoretical design for electronic transport of a 3D device (6-terminal).

Bacteriorhodopsin as an electronic conduction medium for biomolecular electronics.

PubMed

Jin, Yongdong; Honig, Tal; Ron, Izhar; Friedman, Noga; Sheves, Mordechai; Cahen, David

2008-11-01

Interfacing functional proteins with solid supports for device applications is a promising route to possible applications in bio-electronics, -sensors, and -optics. Various possible applications of bacteriorhodopsin (bR) have been explored and reviewed since the discovery of bR. This tutorial review discusses bR as a medium for biomolecular optoelectronics, emphasizing ways in which it can be interfaced, especially as a thin film, solid-state current-carrying electronic element.

Two-Way Communication Using RFID Equipment and Techniques

NASA Technical Reports Server (NTRS)

Jedry, Thomas; Archer, Eric

2007-01-01

Equipment and techniques used in radio-frequency identification (RFID) would be extended, according to a proposal, to enable short-range, two-way communication between electronic products and host computers. In one example of a typical contemplated application, the purpose of the short-range radio communication would be to transfer image data from a user s digital still or video camera to the user s computer for recording and/or processing. The concept is also applicable to consumer electronic products other than digital cameras (for example, cellular telephones, portable computers, or motion sensors in alarm systems), and to a variety of industrial and scientific sensors and other devices that generate data. Until now, RFID has been used to exchange small amounts of mostly static information for identifying and tracking assets. Information pertaining to an asset (typically, an object in inventory to be tracked) is contained in miniature electronic circuitry in an RFID tag attached to the object. Conventional RFID equipment and techniques enable a host computer to read data from and, in some cases, to write data to, RFID tags, but they do not enable such additional functions as sending commands to, or retrieving possibly large quantities of dynamic data from, RFID-tagged devices. The proposal would enable such additional functions. The figure schematically depicts an implementation of the proposal for a sensory device (e.g., a digital camera) that includes circuitry that converts sensory information to digital data. In addition to the basic sensory device, there would be a controller and a memory that would store the sensor data and/or data from the controller. The device would also be equipped with a conventional RFID chipset and antenna, which would communicate with a host computer via an RFID reader. The controller would function partly as a communication interface, implementing two-way communication protocols at all levels (including RFID if needed) between the sensory device and the memory and between the host computer and the memory. The controller would perform power V

First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability

NASA Astrophysics Data System (ADS)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2017-03-01

Because disorders are inevitable in realistic nanodevices, the capability to quantitatively simulate the disorder effects on electron transport is indispensable for quantum transport theory. Here, we report a unified and effective first-principles quantum transport method for analyzing effects of chemical or substitutional disorder on transport properties of nanoelectronics, including averaged transmission coefficient, shot noise, and disorder-induced device-to-device variability. All our theoretical formulations and numerical implementations are worked out within the framework of the tight-binding linear muffin tin orbital method. In this method, we carry out the electronic structure calculation with the density functional theory, treat the nonequilibrium statistics by the nonequilbrium Green's function method, and include the effects of multiple impurity scattering with the generalized nonequilibrium vertex correction (NVC) method in coherent potential approximation (CPA). The generalized NVC equations are solved from first principles to obtain various disorder-averaged two-Green's-function correlators. This method provides a unified way to obtain different disorder-averaged transport properties of disordered nanoelectronics from first principles. To test our implementation, we apply the method to investigate the shot noise in the disordered copper conductor, and find all our results for different disorder concentrations approach a universal Fano factor 1 /3 . As the second test, we calculate the device-to-device variability in the spin-dependent transport through the disordered Cu/Co interface and find the conductance fluctuation is very large in the minority spin channel and negligible in the majority spin channel. Our results agree well with experimental measurements and other theories. In both applications, we show the generalized nonequilibrium vertex corrections play a determinant role in electron transport simulation. Our results demonstrate the effectiveness of the first-principles generalized CPA-NVC for atomistic analysis of disordered nanoelectronics, extending the capability of quantum transport simulation.

From nanoelectronics to nano-spintronics.

PubMed

Wang, Kang L; Ovchinnikov, Igor; Xiu, Faxian; Khitun, Alex; Bao, Ming

2011-01-01

Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

EDITORIAL: Design and function of molecular and bioelectronics devices

NASA Astrophysics Data System (ADS)

Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

2007-10-01

Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers from NGC2007. The NGC2007 meeting, which included two days of tutorials (Spring School) and a three day symposium, attracted approximately 400 participants from academic, industrial and governmental research institutions from 41 countries, and covered recent developments in the fabrication and functionality of nano-scale materials, devices and system architecture from advanced CMOS to molecular electronics, photonics, optoelectronics and magnetic materials and devices. The success of the conference would not have been possible without generous support from many sponsors and research institutions, especially from Arizona State University (conference host and co-organizer), International Science and Technology Center (ISTC), National Science Foundation (NSFT), Defense Advanced Research Agency (DARPA), Office of Naval Research, Army Research Office, Computational Chemistry List (CCL), Springer Publisher, City of Tempe, STMicroelectronics, Quarles & Brady LLP, Oak Ridge National Laboratory, Canadian Consulate in Phoenix, Salt River Project (SRP) and many other local, national and international and individual supporters. We would like to acknowledge the shared responsibility for this special issue of Nanotechnology on molecular and bioelectronics, and the highly professional support from Dr Nina Couzin, Dr Alex Wotherspoon and the Nanotechnology team from the IOP Publishing. We also acknowledge the exception made in allowing the publication of some material that is outside the normal scope of Nanotechnology.

Design and function of molecular and bioelectronics devices.

PubMed

Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

2007-10-24

Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers from NGC2007. The NGC2007 meeting, which included two days of tutorials (Spring School) and a three day symposium, attracted approximately 400 participants from academic, industrial and governmental research institutions from 41 countries, and covered recent developments in the fabrication and functionality of nano-scale materials, devices and system architecture from advanced CMOS to molecular electronics, photonics, optoelectronics and magnetic materials and devices. The success of the conference would not have been possible without generous support from many sponsors and research institutions, especially from Arizona State University (conference host and co-organizer), International Science and Technology Center (ISTC), National Science Foundation (NSFT), Defense Advanced Research Agency (DARPA), Office of Naval Research, Army Research Office, Computational Chemistry List (CCL), Springer Publisher, City of Tempe, STMicroelectronics, Quarles & Brady LLP, Oak Ridge National Laboratory, Canadian Consulate in Phoenix, Salt River Project (SRP) and many other local, national and international and individual supporters. We would like to acknowledge the shared responsibility for this special issue of Nanotechnology on molecular and bioelectronics, and the highly professional support from Dr Nina Couzin, Dr Alex Wotherspoon and the Nanotechnology team from the IOP Publishing. We also acknowledge the exception made in allowing the publication of some material that is outside the normal scope of Nanotechnology.

A portable hardware-in-the-loop (HIL) device for automotive diagnostic control systems.

PubMed

Palladino, A; Fiengo, G; Lanzo, D

2012-01-01

In-vehicle driving tests for evaluating the performance and diagnostic functionalities of engine control systems are often time consuming, expensive, and not reproducible. Using a hardware-in-the-loop (HIL) simulation approach, new control strategies and diagnostic functions on a controller area network (CAN) line can be easily tested in real time, in order to reduce the effort and the cost of the testing phase. Nowadays, spark ignition engines are controlled by an electronic control unit (ECU) with a large number of embedded sensors and actuators. In order to meet the rising demand of lower emissions and fuel consumption, an increasing number of control functions are added into such a unit. This work aims at presenting a portable electronic environment system, suited for HIL simulations, in order to test the engine control software and the diagnostic functionality on a CAN line, respectively, through non-regression and diagnostic tests. The performances of the proposed electronic device, called a micro hardware-in-the-loop system, are presented through the testing of the engine management system software of a 1.6 l Fiat gasoline engine with variable valve actuation for the ECU development version. Copyright © 2011 ISA. Published by Elsevier Ltd. All rights reserved.

Carbon Nanotube Devices Engineered by Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Prisbrey, Landon

This dissertation explores the engineering of carbon nanotube electronic devices using atomic force microscopy (AFM) based techniques. A possible application for such devices is an electronic interface with individual biological molecules. This single molecule biosensing application is explored both experimentally and with computational modeling. Scanning probe microscopy techniques, such as AFM, are ideal to study nanoscale electronics. These techniques employ a probe which is raster scanned above a sample while measuring probe-surface interactions as a function of position. In addition to topographical and electrostatic/magnetic surface characterization, the probe may also be used as a tool to manipulate and engineer at the nanoscale. Nanoelectronic devices built from carbon nanotubes exhibit many exciting properties including one-dimensional electron transport. A natural consequence of onedimensional transport is that a single perturbation along the conduction channel can have extremely large effects on the device's transport characteristics. This property may be exploited to produce electronic sensors with single-molecule resolution. Here we use AFM-based engineering to fabricate atomic-sized transistors from carbon nanotube network devices. This is done through the incorporation of point defects into the carbon nanotube sidewall using voltage pulses from an AFM probe. We find that the incorporation of an oxidative defect leads to a variety of possible electrical signatures including sudden switching events, resonant scattering, and breaking of the symmetry between electron and hole transport. We discuss the relationship between these different electronic signatures and the chemical structure/charge state of the defect. Tunneling through a defect-induced Coulomb barrier is modeled with numerical Verlet integration of Schrodinger's equation and compared with experimental results. Atomic-sized transistors are ideal for single-molecule applications due to their sensitivity to electric fields with very small detection volumes. In this work we demonstrate these devices as single-molecule sensors to detect individual N-(3-Dimethylaminopropyl)- N'-ethylcarbodiimide (EDC) molecules in an aqueous environment. An exciting application of these sensors is to study individual macromolecules participating in biological reactions, or undergoing conformational change. However, it is unknown whether the associated electrostatic signals exceed detection limits. We report calculations which reveal that enzymatic processes, such as substrate binding and internal protein dynamics, are detectable at the single-molecule level using existing atomic-sized transistors. Finally, we demonstrate the use of AFM-based engineering to control the function of nanoelectronic devices without creating a point defect in the sidewall of the nanotube. With a biased AFM probe we write charge patterns on a silicon dioxide surface in close proximity to a carbon nanotube device. The written charge induces image charges in the nearby electronics, and can modulate the Fermi level in a nanotube by +/-1 eV. We use this technique to induce a spatially controlled doping charge pattern in the conduction channel, and thereby reconfigure a field-effect transistor into a pn junction. Other simple charge patterns could be used to create other devices. The doping charge persists for days and can be erased and rewritten, offering a new tool for prototyping nanodevices and optimizing electrostatic doping profiles.

USSR and Eastern Europe Scientific Abstracts, Electronics and Electrical Engineering, Number 27

DTIC Science & Technology

1977-02-10

input and output conditions. The power section of the circuit is modified to permit triacs and thyristors, respectively, to function. The purpose of the...electronic materials, components, and devices, on circuit theory, pulse techniques, electromagnetic wave propagation, radar, quantum electronic theory...Lasers, Masers, Holography, Quasi-Optical 20 Microelectronics and General Circuit Theory and Information 21 Radars and Radio Wavigati on 22

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

2009-02-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Single walled carbon nanotube-based stochastic resonance device with molecular self-noise source

NASA Astrophysics Data System (ADS)

Fujii, Hayato; Setiadi, Agung; Kuwahara, Yuji; Akai-Kasaya, Megumi

2017-09-01

Stochastic resonance (SR) is an intrinsic noise usage system for small-signal sensing found in various living creatures. The noise-enhanced signal transmission and detection system, which is probabilistic but consumes low power, has not been used in modern electronics. We demonstrated SR in a summing network based on a single-walled carbon nanotube (SWNT) device that detects small subthreshold signals with very low current flow. The nonlinear current-voltage characteristics of this SWNT device, which incorporated Cr electrodes, were used as the threshold level of signal detection. The adsorption of redox-active polyoxometalate molecules on SWNTs generated additional noise, which was utilized as a self-noise source. To form a summing network SR device, a large number of SWNTs were aligned parallel to each other between the electrodes, which increased the signal detection ability. The functional capabilities of the present small-size summing network SR device, which rely on dense nanomaterials and exploit intrinsic spontaneous noise at room temperature, offer a glimpse of future bio-inspired electronic devices.

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

Designing Crane Controls with Applied Mechanical and Electrical Safety Features

NASA Technical Reports Server (NTRS)

Lytle, Bradford P.; Walczak, Thomas A.

2002-01-01

The use of overhead traveling bridge cranes in many varied applications is common practice. In particular, the use of cranes in the nuclear, military, commercial, aerospace, and other industries can involve safety critical situations. Considerations for Human Injury or Casualty, Loss of Assets, Endangering the Environment, or Economic Reduction must be addressed. Traditionally, in order to achieve additional safety in these applications, mechanical systems have been augmented with a variety of devices. These devices assure that a mechanical component failure shall reduce the risk of a catastrophic loss of the correct and/or safe load carrying capability. ASME NOG-1-1998, (Rules for Construction of Overhead and Gantry Cranes, Top Running Bridge, and Multiple Girder), provides design standards for cranes in safety critical areas. Over and above the minimum safety requirements of todays design standards, users struggle with obtaining a higher degree of reliability through more precise functional specifications while attempting to provide "smart" safety systems. Electrical control systems also may be equipped with protective devices similar to the mechanical design features. Demands for improvement of the cranes "control system" is often recognized, but difficult to quantify for this traditionally "mechanically" oriented market. Finite details for each operation must be examined and understood. As an example, load drift (or small motions) at close tolerances can be unacceptable (and considered critical). To meet these high functional demands encoders and other devices are independently added to control systems to provide motion and velocity feedback to the control drive. This paper will examine the implementation of Programmable Electronic Systems (PES). PES is a term this paper will use to describe any control system utilizing any programmable electronic device such as Programmable Logic Controllers (PLC), or an Adjustable Frequency Drive (AID) 'smart' programmable motion controller. Therefore the use of the term Programmable Electronic Systems (PES) is an encompassing description for a large spectrum of programmable electronic control devices.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

One-step direct transfer of pristine single-walled carbon nanotubes for functional nanoelectronics.

PubMed

Wu, Chung Chiang; Liu, Chang Hua; Zhong, Zhaohui

2010-03-10

We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical resonators with gate-tunable resonance frequencies. A fully suspended SWNT p-n diode has also been demonstrated with the diode ideality factor equal to 1. Our method eliminates the organic residues on SWNTs resulting from conventional lithography and solution processing. The results open up opportunities for the fundamental study of electron transport physics in ultraclean SWNTs and for room temperature fabrication of novel functional devices based on pristine SWNTs.

Printed Electronics

NASA Astrophysics Data System (ADS)

Wade, Jessica; Hollis, Joseph Razzell; Wood, Sebastian

2018-04-01

The combination of printing technology with manufacturing electronic devices enables a new paradigm of printable electronics, where 'smart' functionality can be readily incorporated into almost any product at low cost. Over recent decades, rapid progress has been made in this field, which is now emerging into the industrial andcommercial realm. However, successful development and commercialisation on a large scale presents some significant technical challenges. For fully-printable electronic systems, all the component parts must be deposited from solutions (inks), requiring the development of new inorganic, organic and hybrid materials.A variety of traditional printing techniques are being explored and adapted forprinting these new materials in ways that result in the best performing electronicdevices. Whilst printed electronics research has initially focused on traditional typesof electronic device such as light-emitting diodes, transistors, and photovoltaics, it is increasingly apparent that a much wider range of applications can be realised. The soft and stretchable nature of printable materials makes them perfect candidates forbioelectronics, resulting in a wealth of research looking at biocompatible printable inks and biosensors. Regardless of application, the properties of printed electronicmaterials depend on the chemical structures, processing conditions, device architecture,and operational conditions, the complex inter-relationships of which aredriving ongoing research. We focus on three particular 'hot topics', where attention is currently focused: novel materials, characterisation techniques, and device stability. With progress advancing very rapidly, printed electronics is expected to grow over the next decade into a key technology with an enormous economic and social impact.

Surface regulated arsenenes as Dirac materials: From density functional calculations

NASA Astrophysics Data System (ADS)

Yuan, Junhui; Xie, Qingxing; Yu, Niannian; Wang, Jiafu

2017-02-01

Using first principle calculations based on density functional theory (DFT), we have systematically investigated the structure stability and electronic properties of chemically decorated arsenenes, AsX (X = CN, NC, NCO, NCS and NCSe). Phonon dispersion and formation energy analysis reveal that all the five chemically decorated buckled arsenenes are energetically favorable and could be synthesized. Our study shows that wide-bandgap arsenene would turn into Dirac materials when functionalized by -X (X = CN, NC, NCO, NCS and NCSe) groups, rendering new promises in next generation high-performance electronic devices.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

2018-07-01

Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering.

PubMed

Tsai, Chia-Lung; Lu, Yi-Chen; Chang, Sheng Hsiung

2018-07-06

Photocurrent extraction and electron injection in CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr 3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr 3 interface but also increases the crystallinity of the MAPbBr 3 thin films. The optimized dual-functional PCBM-MAPbBr 3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m -2 . In addition, the modulation speed of the MAPbBr 3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr 3 thin film can be effectively reduced by using the ESA process.

78 FR 16707 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-18

... Practice and Procedure (19 CFR 210.8(b)). FOR FURTHER INFORMATION CONTACT: Lisa R. Barton, Acting Secretary to the Commission, U.S. International Trade Commission, 500 E Street SW., Washington, DC 20436..., 500 E Street SW., Washington, DC 20436, telephone (202) 205-2000. \\1\\ Electronic Document Information...

Inventory of Electronic Mobility Aids for Persons with Visual Impairments: A Literature Review

ERIC Educational Resources Information Center

Roentgen, Uta R.; Gelderblom, Gert Jan; Soede, Mathijs; de Witte, Luc P.

2008-01-01

This literature review of existing electronic mobility aids for persons who are visually impaired and recent developments in this field identified and classified 146 products, systems, and devices. The 21 that are currently available that can be used without environmental adaptation are described in functional terms. (Contains 2 tables.)

Graphene for amino acid biosensing: Theoretical study of the electronic transport

NASA Astrophysics Data System (ADS)

Rodríguez, S. J.; Makinistian, L.; Albanesi, E. A.

2017-10-01

The study of biosensors based on graphene has increased in the last years, the combination of excellent electrical properties and low noise makes graphene a material for next generation electronic devices. This work discusses the application of a graphene-based biosensor for the detection of amino acids histidine (His), alanine (Ala), aspartic acid (Asp), and tyrosine (Tyr). First, we present the results of modeling from first principles the adsorption of the four amino acids on a graphene sheet, we calculate adsorption energy, substrate-adsorbate distance, equilibrium geometrical configurations (upon relaxation) and densities of states (DOS) for each biomolecule adsorbed. Furthermore, in order to evaluate the effects of amino acid adsorption on the electronic transport of graphene, we modeled a device using first-principles calculations with a combination of Density Functional Theory (DFT) and Nonequilibrium Greens Functions (NEGF). We provide with a detailed discussion in terms of transmission, current-voltage curves, and charge transfer. We found evidence of differences in the electronic transport through the graphene sheet due to amino acid adsorption, reinforcing the possibility of graphene-based sensors for amino acid sequencing of proteins.

Tricuspid Valve Dysfunction Following Pacemaker or Cardioverter-Defibrillator Implantation.

PubMed

Chang, James D; Manning, Warren J; Ebrille, Elisa; Zimetbaum, Peter J

2017-05-09

The potential for cardiac implantable electronic device leads to interfere with tricuspid valve (TV) function has gained increasing recognition as having hemodynamic and clinical consequences associated with incremental morbidity and death. The diagnosis and treatment of lead-related (as distinct from functional) tricuspid regurgitation pose unique challenges. Because of pitfalls in routine diagnostic imaging, a high level of clinical suspicion must be maintained to avoid overlooking the possibility that worsening heart failure is a consequence of mechanical interference with TV leaflet mobility or coaptation and is amenable to lead extraction or valve repair or replacement. The future of cardiac implantable electronic devices includes pacing and perhaps defibrillation without a lead traversing the TV. Copyright © 2017 American College of Cardiology Foundation. Published by Elsevier Inc. All rights reserved.

Infrared photoemitting diode having reduced work function

DOEpatents

Hirschfeld, T.B.

1982-05-06

In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid meidum of the formula NR/sub 3/ and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

Infrared photoemitting diode having reduced work function

DOEpatents

Hirschfeld, Tomas B.

1984-01-01

In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid medium of the formula NR.sub.3 and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

NASA Astrophysics Data System (ADS)

Fujita, Shizuo; Oda, Masaya; Kaneko, Kentaro; Hitora, Toshimi

2016-12-01

The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.

Nanotubule and Tour Molecule Based Molecular Electronics: Suggestion for a Hybrid Approach

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash (Technical Monitor)

1998-01-01

Recent experimental and theoretical attempts and results indicate two distinct broad pathways towards future molecular electronic devices and architectures. The first is the approach via Tour type ladder molecules and their junctions which can be fabricated with solution phase chemical approaches. Second are fullerenes or nanotubules and their junctions which may have better conductance, switching and amplifying characteristics but can not be made through well controlled and defined chemical means. A hybrid approach combining the two pathways to take advantage of the characteristics of both is suggested. Dimension and scale of such devices would be somewhere in between isolated molecule and nanotubule based devices but it maybe possible to use self-assembly towards larger functional and logicalunits.

A physically transient form of silicon electronics.

PubMed

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Song, Young Min; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L; Zakin, Mitchell R; Slepian, Marvin J; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A

2012-09-28

A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar

2015-09-15

Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottkymore » diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.« less

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Negative differential resistance observation in complex convoluted fullerene junctions

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

2018-04-01

In this work, we simulated the smallest fullerene molecule, C20 in a two-probe device model with gold electrodes. The gold electrodes comprised of (011) miller planes were carved to construct the novel geometry based four unique shapes, which were strung to fullerene molecules through mechanically controlled break junction techniques. The organized devices were later scrutinized using non-equilibrium Green's function based on the density functional theory to calculate their molecular orbitals, energy levels, charge transfers, and electrical parameters. After intense scrutiny, we concluded that five-edged and six-edged devices have the lowest and highest current-conductance values, which result from their electrode-dominating and electrode-subsidiary effects, respectively. However, an interesting observation was that the three-edged and four-edged electrodes functioned as semi-metallic in nature, allowing the C20 molecule to demonstrate its performance with the complementary effect of these electrodes in the electron conduction process of a two-probe device.

The merger of electrochemistry and molecular electronics.

PubMed

McCreery, Richard L

2012-02-01

Molecular Electronics has the potential to greatly enhance existing silicon-based microelectronics to realize new functions, higher device density, lower power consumption, and lower cost. Although the investigation of electron transport through single molecules and molecular monolayers in "molecular junctions" is a recent development, many of the relevant concepts and phenomena are derived from electrochemistry, as practiced for the past several decades. The past 10+ years have seen an explosion of research activity directed toward how the structure of molecules affects electron transport in molecular junctions, with the ultimate objective of "rational design" of molecular components with new electronic functions, such as chemical sensing, interactions with light, and low-cost, low-power consumer electronics. In order to achieve these scientifically and commercially important objectives, the factors controlling charge transport in molecules "connected" to conducting contacts must be understood, and methods for massively parallel manufacturing of molecular circuits must be developed. This Personal Account describes the development of reproducible and robust molecular electronic devices, starting with modified electrodes used in electrochemistry and progressing to manufacturable molecular junctions. Although the field faced some early difficulties in reliability and characterization, the pieces are now in place for rapid advances in understanding charge transport at the molecular level. Inherent in the field of Molecular Electronics are many electrochemical concepts, including tunneling, redox exchange, activated electron transfer, and electron coupling between molecules and conducting contacts. Copyright © 2012 The Japan Chemical Journal Forum and Wiley Periodicals, Inc.

Supramolecular core-shell nanoparticles for photoconductive device applications

NASA Astrophysics Data System (ADS)

Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

2016-08-01

We report a breakthrough discovery involving supramolecular-based strategies to construct novel core-shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices.

Molecular gearing systems

DOE PAGES

Gakh, Andrei A.; Sachleben, Richard A.; Bryan, Jeff C.

1997-11-01

The race to create smaller devices is fueling much of the research in electronics. The competition has intensified with the advent of microelectromechanical systems (MEMS), in which miniaturization is already reaching the dimensional limits imposed by physics of current lithographic techniques. Also, in the realm of biochemistry, evidence is accumulating that certain enzyme complexes are capable of very sophisticated modes of motion. Complex synergistic biochemical complexes driven by sophisticated biomechanical processes are quite common. Their biochemical functions are based on the interplay of mechanical and chemical processes, including allosteric effects. In addition, the complexity of this interplay far exceeds thatmore » of typical chemical reactions. Understanding the behavior of artificial molecular devices as well as complex natural molecular biomechanical systems is difficult. Fortunately, the problem can be successfully resolved by direct molecular engineering of simple molecular systems that can mimic desired mechanical or electronic devices. These molecular systems are called technomimetics (the name is derived, by analogy, from biomimetics). Several classes of molecular systems that can mimic mechanical, electronic, or other features of macroscopic devices have been successfully synthesized by conventional chemical methods during the past two decades. In this article we discuss only one class of such model devices: molecular gearing systems.« less

Towards nanometer-spaced silicon contacts to proteins.

PubMed

Schukfeh, Muhammed I; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-18

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p(+) silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices' electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes' edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions' conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein's denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Basic Mechanisms of Radiation Effects in Electronic Materials and Devices

DTIC Science & Technology

1987-09-01

power as function of particle energy for electrons and protons Incident on silic,,n...8217-Mev 0000 Neutrons0 0 Fluenoe n/oma e 1-MeV equivalent fluenos n/orm DlSlLAOUMllW Ionizing radltlon O Stopping power (linear energy MeV/(g/om...from the interaction of radiation energy that goes Into ionization Is given by the stop- with electronic materials are Ionization (primarily ping power

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

NASA Astrophysics Data System (ADS)

Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

2016-04-01

The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takane, Daichi; Souma, Seigo; Center for Spintronics Research Network, Tohoku University, Sendai 980-8577

Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as amore » useful guide for developing TI-based electronic devices.« less

Opto-electronic devices with nanoparticles and their assemblies

NASA Astrophysics Data System (ADS)

Nguyen, Chieu Van

Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (< 100nm) particles provide tremendous possibilities due to their unique electrical, optical, and mechanical properties. Plethora of NPs with various chemical composition, size and shape has been synthesized. Clever designs of sub-wavelength structures enable observation of unusual properties of materials, and have led to new areas of research such as metamaterials. This dissertation describes two self-assemblies of gold nanoparticles, leading to an ultra-soft thin film and multi-functional single electron device at room temperature. First, the layer-by-layer self-assembly of 10nm Au nanoparticles and polyelectrolytes is shown to behave like a cellular-foam with modulus below 100 kPa. As a result, the composite thin film (˜ 100nm) is 5 orders of magnitude softer than an equally thin typical polymer film. The thin film can be compressed reversibly to 60% strain. The extraordinarily low modulus and high compressibility are advantageous in pressure sensing applications. The unique mechanical properties of the composite film lead to development of an ultra-sensitive tactile imaging device capable of screening for breast cancer. On par with human finger sensitivity, the tactile device can detect a 5mm imbedded object up to 20mm below the surface with low background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au NPs has great potential in modern electronics such as solid state lighting, plasma-based nanoelectronics, and memory devices.

Ultrafast graphene and carbon nanotube film patterning by picosecond laser pulses

NASA Astrophysics Data System (ADS)

Bobrinetskiy, Ivan I.; Emelianov, Alexey V.; Otero, Nerea; Romero, Pablo M.

2016-03-01

Carbon nanomaterials is among the most promising technologies for advanced electronic applications, due to their extraordinary chemical and physical properties. Nonetheless, after more than two decades of intensive research, the application of carbon-based nanostructures in real electronic and optoelectronic devices is still a big challenge due to lack of scalable integration in microelectronic manufacturing. Laser processing is an attractive tool for graphene device manufacturing, providing a large variety of processes through direct and indirect interaction of laser beams with graphene lattice: functionalization, oxidation, reduction, etching and ablation, growth, etc. with resolution down to the nanoscale. Focused laser radiation allows freeform processing, enabling fully mask-less fabrication of devices from graphene and carbon nanotube films. This concept is attractive to reduce costs, improve flexibility, and reduce alignment operations, by producing fully functional devices in single direct-write operations. In this paper, a picosecond laser with a wavelength of 515 nm and pulse width of 30 ps is used to pattern carbon nanostructures in two ways: ablation and chemical functionalization. The light absorption leads to thermal ablation of graphene and carbon nanotube film under the fluence 60-90 J/cm2 with scanning speed up to 2 m/s. Just under the ablation energy, the two-photon absorption leads to add functional groups to the carbon lattice which change the optical properties of graphene. This paper shows the results of controlled modification of geometrical configuration and the physical and chemical properties of carbon based nanostructures, by laser direct writing.

Functionalization of graphene nanoribbons

NASA Astrophysics Data System (ADS)

Genorio, Bostjan; Znidarsic, Andrej

2014-03-01

Graphene nanoribbon (GNR) is a recently discovered carbon allotrope, which can be described as a stripe of graphene. Pseudo-one-dimensionality exerts additional confinement on the electrons resulting in the formation of a band gap relevant for electronic devices. Due to distinct physical and chemical properties it is a promising material for several applications. To expand the range of potential applications and to improve processability, chemical functionalization of GNRs is required. This review aims to provide a concise and systematic coverage of recent work in chemical functionalization of GNRs. We will focus on longitudinal carbon nanotube unzipping, functionalization with aryl diazonium salts, non-covalent functionalization, bottom-up synthesis and one pot carbon nanotube unzipping with in situ edge functionalization.

Work-Function and Surface Energy Tunable Cyanoacrylic Acid Small-Molecule Derivative Interlayer on Planar ZnO Nanorods for Improved Organic Photovoltaic Performance.

PubMed

Ambade, Swapnil B; Ambade, Rohan B; Bagde, Sushil S; Lee, Soo-Hyoung

2016-12-28

The issue of work-function and surface energy is fundamental to "decode" the critical inorganic/organic interface in hybrid organic photovoltaics, which influences important photovoltaic events like exciton dissociation, charge transfer, photocurrent (J sc ), open-circuit voltage (V oc ), etc. We demonstrate that by incorporating an interlayer of cyanoacrylic acid small molecular layer (SML) on solution-processed, spin-coated, planar ZnO nanorods (P-ZnO NRs), higher photovoltaic (PV) performances were achieved in both inverted organic photovoltaic (iOPV) and hybrid organic photovoltaic (HOPV) devices, where ZnO acts as an "electron-transporting layer" and as an "electron acceptor", respectively. For the tuned range of surface energy from 52.5 to 33 mN/m, the power conversion efficiency (PCE) in bulk heterojunction (BHJ) iOPVs based on poly(3-hexylthiophene) (P3HT) and phenyl-C 60 -butyric acid methyl ester (PC 60 BM) increases from 3.16% to 3.68%, and that based on poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene)-2-carboxylate-2-6-diyl)] (PTB7:Th):[6,6]-phenyl C 71 butyric acid methyl ester (PC 71 BM) photoactive BHJ increases from 6.55% to 8.0%, respectively. The improved PV performance in iOPV devices is majorly attributed to enhanced photocurrents achieved as a result of reduced surface energy and greater electron affinity from the covalent attachment of the strong electron-withdrawing cyano moiety, while that in HOPV devices, where PCE increases from 0.21% to 0.79% for SML-modified devices, is ascribed to a large increase in V oc benefitted due to reduced work function effected from the presence of strong dipole moment in SML that points away from P-ZnO NRs.

First-principles investigation of the interlayer coupling in chromium-trichloride-a layered magnetic insulator

NASA Astrophysics Data System (ADS)

Kc, Santosh; McGuire, Michael A.; Cooper, Valentino R.

The crystallographic, electronic and magnetic properties of layered CrCl3were investigated using density functional theory. We use the newly developed spin van der Waals density functional (svdW-DF) in order to explore the atomic, electronic and magnetic structure. Our results indicate that treatment of the long-range interlayer forces with the svdW-DF improves the accuracy of crystal structure predictions. The cleavage energy was estimated to be 0.29 J/m2 suggesting that CrCl3 should be cleavable using standard mechanical exfoliation techniques. The inclusion of spin in the non-local vdW-DF allows us to directly probe the coupling between the magnetic structure and lattice degrees of freedom. An understanding of the link between electronic, magnetic and structural properties can be useful for novel device applications such as magnetoelectric devices, spin transistors, and 2D magnet. Research was sponsored by the US DOE, Office of Science, BES, MSED and Early Career Research Programs and used resources at NERSC.

Novel scanning electron microscope bulge test technique integrated with loading function

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chuanwei; Xie, Huimin, E-mail: liuzw@bit.edu.cn, E-mail: xiehm@mail.tsinghua.edu.cn; Liu, Zhanwei, E-mail: liuzw@bit.edu.cn, E-mail: xiehm@mail.tsinghua.edu.cn

2014-10-15

Membranes and film-on-substrate structures are critical elements for some devices in electronics industry and for Micro Electro Mechanical Systems devices. These structures are normally at the scale of micrometer or even nanometer. Thus, the measurement for the mechanical property of these membranes poses a challenge over the conventional measurements at macro-scales. In this study, a novel bulge test method is presented for the evaluation of mechanical property of micro thin membranes. Three aspects are discussed in the study: (a) A novel bulge test with a Scanning Electron Microscope system realizing the function of loading and measuring simultaneously; (b) a simplifiedmore » Digital Image Correlation method for a height measurement; and (c) an imaging distortion correction by the introduction of a scanning Moiré method. Combined with the above techniques, biaxial modulus as well as Young's modulus of the polyimide film can be determined. Besides, a standard tensile test is conducted as an auxiliary experiment to validate the feasibility of the proposed method.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE PAGES

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang; ...

2017-10-27

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

Flexible TFTs based on solution-processed ZnO nanoparticles.

PubMed

Jun, Jin Hyung; Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig

2009-12-16

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V(-1) s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.

TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, A; Lin, H; Rubio-Sanchez, J

Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less

Two-dimensional numerical model for the high electron mobility transistor

NASA Astrophysics Data System (ADS)

Loret, Dany

1987-11-01

A two-dimensional numerical drift-diffusion model for the High Electron Mobility Transistor (HEMT) is presented. Special attention is paid to the modeling of the current flow over the heterojunction. A finite difference scheme is used to solve the equations, and a variable mesh spacing was implemented to cope with the strong variations of functions near the heterojunction. Simulation results are compared to experimental data for a 0.7 μm gate length device. Small-signal transconductances and cut-off frequency obtained from the 2-D model agree well with the experimental values from S-parameter measurements. It is shown that the numerical models give good insight into device behaviour, including important parasitic effects such as electron injection into the bulk GaAs.

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Graphene based biosensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gürel, Hikmet Hakan, E-mail: hhakan.gurel@kocaeli.edu.tr; Salmankurt, Bahadır

2016-03-25

Nanometer-sized graphene as a 2D material has unique chemical and electronic properties. Because of its unique physical, chemical, and electronic properties, its interesting shape and size make it a promising nanomaterial in many biological applications. It is expected that biomaterials incorporating graphene will be developed for the graphene-based drug delivery systems and biomedical devices. The interactions of biomolecules and graphene are long-ranged and very weak. Development of new techniques is very desirable for design of bioelectronics sensors and devices. In this work, we present first-principles calculations within density functional theory to calculate effects of charging on nucleobases on graphene. Itmore » is shown that how modify structural and electronic properties of nucleobases on graphene by applied charging.« less

Artificial vision: needs, functioning, and testing of a retinal electronic prosthesis.

PubMed

Chader, Gerald J; Weiland, James; Humayun, Mark S

2009-01-01

Hundreds of thousands around the world have poor vision or no vision at all due to inherited retinal degenerations (RDs) like retinitis pigmentosa (RP). Similarly, millions suffer from vision loss due to age-related macular degeneration (AMD). In both of these allied diseases, the primary target for pathology is the retinal photoreceptor cells that dysfunction and die. Secondary neurons though are relatively spared. To replace photoreceptor cell function, an electronic prosthetic device can be used such that retinal secondary neurons receive a signal that simulates an external visual image. The composite device has a miniature video camera mounted on the patient's eyeglasses, which captures images and passes them to a microprocessor that converts the data to an electronic signal. This signal, in turn, is transmitted to an array of electrodes placed on the retinal surface, which transmits the patterned signal to the remaining viable secondary neurons. These neurons (ganglion, bipolar cells, etc.) begin processing the signal and pass it down the optic nerve to the brain for final integration into a visual image. Many groups in different countries have different versions of the device, including brain implants and retinal implants, the latter having epiretinal or subretinal placement. The device furthest along in development is an epiretinal implant sponsored by Second Sight Medical Products (SSMP). Their first-generation device had 16 electrodes with human testing in a Phase 1 clinical trial beginning in 2002. The second-generation device has 60+ electrodes and is currently in Phase 2/3 clinical trial. Increased numbers of electrodes are planned for future versions of the device. Testing of the device's efficacy is a challenge since patients admitted into the trial have little or no vision. Thus, methods must be developed that accurately and reproducibly record small improvements in visual function after implantation. Standard tests such as visual acuity, visual field, electroretinography, or even contrast sensitivity may not adequately capture some aspects of improvement that relate to a better quality of life (QOL). Because of this, some tests are now relying more on "real-world functional capacity" that better assesses possible improvement in aspects of everyday living. Thus, a new battery of tests have been suggested that include (1) standard psychophysical testing, (2) performance in tasks that are used in real-life situations such as object discrimination, mobility, etc., and (3) well-crafted questionnaires that assess the patient's own feelings as to the usefulness of the device. In the Phase 1 trial of the SSMP 16-electrode device, six subjects with severe RP were implanted with ongoing, continuing testing since then. First, it was evident that even limited sight restoration is a slow, learning process that takes months for improvement to become evident. However, light perception was restored in all six patients. Moreover, all subjects ultimately saw discrete phosphenes and could perform simple visual spatial and motion tasks. As mentioned above, a Phase 2/3 trial is now ongoing with a 60+ device. A 250+ device is on the drawing board, and one with over 1000 electrodes is being planned. Each has the possibility of significantly improving a patient's vision and QOL, being smaller and safer in design and lasting for the lifetime of the patient. From theoretical modeling, it is estimated that a device with approximately 1000 electrodes could give good functional vision, i.e., face recognition and reading ability. This could be a reality within 5-10 years from now. In summary, no treatments are currently available for severely affected patients with RP and dry AMD. An electrical prosthetic device appears to offer hope in replacing the function of degenerating or dead photoreceptor neurons. Devices with new, sophisticated designs and increasing numbers of electrodes could allow for long-term restoration of functional sight in patients with improvement in object recognition, mobility, independent living, and general QOL.

iPad: Efficacy of Electronic Devices to Help Children with Autism Spectrum Disorder to Communicate in the Classroom

ERIC Educational Resources Information Center

Sankardas, Sulata Ajit; Rajanahally, Jayashree

2017-01-01

Children with Autism Spectrum Disorder (ASD) are known to have difficulty in social communication, with research indicating that children with ASD fail to develop functional speech (Lord and Rutter, 1994). Over the years a number of Augmented and Alternate Communication (AAC) devices have been used with children with ASD to overcome this barrier…

Digital Course Materials: A Case Study of the Apple iPad in the Academic Environment

ERIC Educational Resources Information Center

Cameron, Andrea H.; Bush, Michael H.

2011-01-01

The newness of the iPad device creates a phenomenon unique and unstudied in the academic environment. By merging the innovations of electronic text, e-reader, and multi-modal functionality, the iPad tablet device can act as an e-reader providing digital course materials as well as a range of other supplementary academic applications. This…

Air-Stable n-type Conductors and Semiconductors

DTIC Science & Technology

2015-07-14

Distribution approved for public release.   10   4. Stretchable and self - healing materials and device development. Future electronic devices...that can self - heal at room temperature repeatedly and have electrical conductivity. Such materials, mimicking human skin functions, may have...particle polymer composites we then developed an elastic nanocomposite material with the ability to rapidly self - heal at room temperature by combining

Bionic Nanosystems

NASA Astrophysics Data System (ADS)

Sebastian Mannoor, Manu

Direct multidimensional integration of functional electronics and mechanical elements with viable biological systems could allow for the creation of bionic systems and devices possessing unique and advanced capabilities. For example, the ability to three dimensionally integrate functional electronic and mechanical components with biological cells and tissue could enable the creation of bionic systems that can have tremendous impact in regenerative medicine, prosthetics, and human-machine interfaces. However, as a consequence of the inherent dichotomy in material properties and limitations of conventional fabrication methods, the attainment of truly seamless integration of electronic and/or mechanical components with biological systems has been challenging. Nanomaterials engineering offers a general route for overcoming these dichotomies, primarily due to the existence of a dimensional compatibility between fundamental biological functional units and abiotic nanomaterial building blocks. One area of compelling interest for bionic systems is in the field of biomedical sensing, where the direct interfacing of nanosensors onto biological tissue or the human body could stimulate exciting opportunities such as on-body health quality monitoring and adaptive threat detection. Further, interfacing of antimicrobial peptide based bioselective probes onto the bionic nanosensors could offer abilities to detect pathogenic bacteria with bio-inspired selectivity. Most compellingly, when paired with additive manufacturing techniques such as 3D printing, these characteristics enable three dimensional integration and merging of a variety of functional materials including electronic, structural and biomaterials with viable biological cells, in the precise anatomic geometries of human organs, to form three dimensionally integrated, multi-functional bionic hybrids and cyborg devices with unique capabilities. In this thesis, we illustrate these approaches using three representative bionic systems: 1) Bionic Nanosensors: featuring bio-integrated graphene nanosensors for ubiquitous sensing, 2) Bionic Organs: featuring 3D printed bionic ears with three dimensionally integrated electronics and 3) Bionic Leaves: describing ongoing work in the direction of the creation of a bionic leaf enabled by the integration of plant derived photosynthetic functional units with electronic materials and components into a leaf-shaped hierarchical structure for harvesting photosynthetic bioelectricity.

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

PubMed

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Gas-Phase Functionalization of Macroscopic Carbon Nanotube Fiber Assemblies: Reaction Control, Electrochemical Properties, and Use for Flexible Supercapacitors.

PubMed

Iglesias, Daniel; Senokos, Evgeny; Alemán, Belén; Cabana, Laura; Navío, Cristina; Marcilla, Rebeca; Prato, Maurizio; Vilatela, Juan J; Marchesan, Silvia

2018-02-14

The assembly of aligned carbon nanotubes (CNTs) into fibers (CNTFs) is a convenient approach to exploit and apply the unique physico-chemical properties of CNTs in many fields. CNT functionalization has been extensively used for its implementation into composites and devices. However, CNTF functionalization is still in its infancy because of the challenges associated with preservation of CNTF morphology. Here, we report a thorough study of the gas-phase functionalization of CNTF assemblies using ozone which was generated in situ from a UV source. In contrast with liquid-based oxidation methods, this gas-phase approach preserves CNTF morphology, while notably increasing its hydrophilicity. The functionalized material is thoroughly characterized by Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and scanning electron microscopy. Its newly acquired hydrophilicity enables CNTF electrochemical characterization in aqueous media, which was not possible for the pristine material. Through comparison of electrochemical measurements in aqueous electrolytes and ionic liquids, we decouple the effects of functionalization on pseudocapacitive reactions and quantum capacitance. The functionalized CNTF assembly is successfully used as an active material and a current collector in all-solid supercapacitor flexible devices with an ionic liquid-based polymer electrolyte.

Silver nanoparticles with tunable work functions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Pangpang, E-mail: pangpang@molecular-device.kyushu-u.ac.jp; Tanaka, Daisuke; Ryuzaki, Sou

To improve the efficiencies of electronic devices, materials with variable work functions are required to decrease the energy level differences at the interfaces between working layers. Here, we report a method to obtain silver nanoparticles with tunable work functions, which have the same silver core of 5 nm in diameter and are capped by myristates and 1-octanethoilates self-assembled monolayers, respectively. The silver nanoparticles capped by organic molecules can form a uniform two-dimensional sheet at air-water interface, and the sheet can be transferred on various hydrophobic substrates. The surface potential of the two-dimensional nanoparticle sheet was measured in terms of Kelvin probemore » force microscopy, and the work function of the sheet was then calculated from the surface potential value by comparing with a reference material. The exchange of the capping molecules results in a work function change of approximately 150–250 meV without affecting their hydrophobicity. We systematically discussed the origin of the work function difference and found it should come mainly from the anchor groups of the ligand molecules. The organic molecule capped nanoparticles with tunable work functions have a potential for the applications in organic electronic devices.« less

Pencil drawn strain gauges and chemiresistors on paper.

PubMed

Lin, Cheng-Wei; Zhao, Zhibo; Kim, Jaemyung; Huang, Jiaxing

2014-01-22

Pencil traces drawn on print papers are shown to function as strain gauges and chemiresistors. Regular graphite/clay pencils can leave traces composed of percolated networks of fine graphite powders, which exhibit reversible resistance changes upon compressive or tensile deflections. Flexible toy pencils can leave traces that are essentially thin films of graphite/polymer composites, which show reversible changes in resistance upon exposure to volatile organic compounds due to absorption/desorption induced swelling/recovery of the polymer binders. Pencil-on-paper devices are low-cost, extremely simple and rapid to fabricate. They are light, flexible, portable, disposable, and do not generate potentially negative environmental impact during processing and device fabrication. One can envision many other types of pencil drawn paper electronic devices that can take on a great variety of form factors. Hand drawn devices could be useful in resource-limited or emergency situations. They could also lead to new applications integrating art and electronics.

An open-source platform to study uniaxial stress effects on nanoscale devices

NASA Astrophysics Data System (ADS)

Signorello, G.; Schraff, M.; Zellekens, P.; Drechsler, U.; Bürge, M.; Steinauer, H. R.; Heller, R.; Tschudy, M.; Riel, H.

2017-05-01

We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of the uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

PubMed

Yang, Heejun; Heo, Jinseong; Park, Seongjun; Song, Hyun Jae; Seo, David H; Byun, Kyung-Eun; Kim, Philip; Yoo, InKyeong; Chung, Hyun-Jong; Kim, Kinam

2012-06-01

Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volt by adjusting graphene's work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

Advanced Materials and Devices for Bioresorbable Electronics.

PubMed

Kang, Seung-Kyun; Koo, Jahyun; Lee, Yoon Kyeung; Rogers, John A

2018-05-15

Recent advances in materials chemistry establish the foundations for unusual classes of electronic systems, characterized by their ability to fully or partially dissolve, disintegrate, or otherwise physically or chemically decompose in a controlled fashion after some defined period of stable operation. Such types of "transient" technologies may enable consumer gadgets that minimize waste streams associated with disposal, implantable sensors that disappear harmlessly in the body, and hardware-secure platforms that prevent unwanted recovery of sensitive data. This second area of opportunity, sometimes referred to as bioresorbable electronics, is of particular interest due to its ability to provide diagnostic or therapeutic function in a manner that can enhance or monitor transient biological processes, such as wound healing, while bypassing risks associated with extended device load on the body or with secondary surgical procedures for removal. Early chemistry research established sets of bioresorbable materials for substrates, encapsulation layers, and dielectrics, along with several options in organic and bio-organic semiconductors. The subsequent realization that nanoscale forms of device-grade monocrystalline silicon, such as silicon nanomembranes (m-Si NMs, or Si NMs) undergo hydrolysis in biofluids to yield biocompatible byproducts over biologically relevant time scales advanced the field by providing immediate routes to high performance operation and versatile, sophisticated levels of function. When combined with bioresorbable conductors, dielectrics, substrates, and encapsulation layers, Si NMs provide the basis for a broad, general class of bioresorbable electronics. Other properties of Si, such as its piezoresistivity and photovoltaic properties, allow other types of bioresorbable devices such as solar cells, strain gauges, pH sensors, and photodetectors. The most advanced bioresorbable devices now exist as complete systems with successful demonstrations of clinically relevant modes of operation in animal models. This Account highlights the foundational materials concepts for this area of technology, starting with the dissolution chemistry and reaction kinetics associated with hydrolysis of Si NMs as a function of temperature, pH, and ion and protein concentration. A following discussion focuses on key supporting materials, including a range of dielectrics, metals, and substrates. As comparatively low performance alternatives to Si NMs, bioresorbable organic semiconductors are also presented, where interest derives from their intrinsic flexibility, low-temperature processability, and ease of chemical modification. Representative examples of encapsulation materials and strategies in passive and active control of device lifetime are then discussed, with various device illustrations. A final section outlines bioresorbable electronics for sensing of various biophysical parameters, monitoring electrophysiological activity, and delivering drugs in a programmed manner. Fundamental research in chemistry remains essential to the development of this emerging field, where continued advances will increase the range of possibilities in sensing, actuation, and power harvesting. Materials for encapsulation layers that can delay water-diffusion and dissolution of active electronics in passively or actively triggered modes are particularly important in addressing areas of opportunity in clinical medicine, and in secure systems for envisioned military and industrial uses. The deep scientific content and the broad range of application opportunities suggest that research in transient electronic materials will remain a growing area of interest to the chemistry community.

Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

NASA Astrophysics Data System (ADS)

Yip, Hin-Lap

Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

1998-01-01

A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device

NASA Astrophysics Data System (ADS)

Nishitani, Yu; Kaneko, Yukihiro; Ueda, Michihito; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

A brain-like learning function was implemented in an electronic synapse device using a ferroelectric-gate field effect transistor (FeFET). The FeFET was a bottom-gate type FET with a ZnO channel and a ferroelectric Pb(Zr,Ti)O3 (PZT) gate insulator. The synaptic weight, which is represented by the channel conductance of the FeFET, is updated by applying a gate voltage through a change in the ferroelectric polarization in the PZT. A learning function based on the symmetric spike-timing dependent synaptic plasticity was implemented in the synapse device using the multilevel weight update by applying a pulse gate voltage. The dynamic weighting and learning behavior in the synapse device was observed as a change in the membrane potential in a spiking neuron circuit.

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

A spin current rectifier

NASA Astrophysics Data System (ADS)

Eyni, Zahra; Mohammadpour, Hakimeh

2017-12-01

Current modulation and rectification is an important subject of electronics as well as spintronics. In this paper, an efficient rectifying mesoscopic device is introduced. The device is a two terminal device on the 2D plane of electron gas. The lateral contacts are half-metal ferromagnetic with antiparallel magnetizations and the central channel region is taken as ferromagnetic or normal in the presence of an applied magnetic field. The device functionality is based on the modification of spin-current by tuning the strength of the magnetic field or equivalently by the exchange coupling of the channel to the substrate. The result is that the (spin-) current depends on the polarity of the bias voltage. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. We analyze the results in terms of the spin-dependent barrier in the channel. Detecting the strength of the magnetic field by spin polarization is also suggested.

Wearable wireless User Interface Cursor-Controller (UIC-C).

PubMed

Marjanovic, Nicholas; Kerr, Kevin; Aranda, Ricardo; Hickey, Richard; Esmailbeigi, Hananeh

2017-07-01

Controlling a computer or a smartphone's cursor allows the user to access a world full of information. For millions of people with limited upper extremities motor function, controlling the cursor becomes profoundly difficult. Our team has developed the User Interface Cursor-Controller (UIC-C) to assist the impaired individuals in regaining control over the cursor. The UIC-C is a hands-free device that utilizes the tongue muscle to control the cursor movements. The entire device is housed inside a subject specific retainer. The user maneuvers the cursor by manipulating a joystick imbedded inside the retainer via their tongue. The joystick movement commands are sent to an electronic device via a Bluetooth connection. The device is readily recognizable as a cursor controller by any Bluetooth enabled electronic device. The device testing results have shown that the time it takes the user to control the cursor accurately via the UIC-C is about three times longer than a standard computer mouse controlled via the hand. The device does not require any permanent modifications to the body; therefore, it could be used during the period of acute rehabilitation of the hands. With the development of modern smart homes, and enhancement electronics controlled by the computer, UIC-C could be integrated into a system that enables individuals with permanent impairment, the ability to control the cursor. In conclusion, the UIC-C device is designed with the goal of allowing the user to accurately control a cursor during the periods of either acute or permanent upper extremities impairment.

49 CFR 220.305 - Use of personal electronic devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with... 49 Transportation 4 2010-10-01 2010-10-01 false Use of personal electronic devices. 220.305...

49 CFR 220.305 - Use of personal electronic devices.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with...

49 CFR 220.305 - Use of personal electronic devices.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off with...

Dissipative time-dependent quantum transport theory.

PubMed

Zhang, Yu; Yam, Chi Yung; Chen, GuanHua

2013-04-28

A dissipative time-dependent quantum transport theory is developed to treat the transient current through molecular or nanoscopic devices in presence of electron-phonon interaction. The dissipation via phonon is taken into account by introducing a self-energy for the electron-phonon coupling in addition to the self-energy caused by the electrodes. Based on this, a numerical method is proposed. For practical implementation, the lowest order expansion is employed for the weak electron-phonon coupling case and the wide-band limit approximation is adopted for device and electrodes coupling. The corresponding hierarchical equation of motion is derived, which leads to an efficient and accurate time-dependent treatment of inelastic effect on transport for the weak electron-phonon interaction. The resulting method is applied to a one-level model system and a gold wire described by tight-binding model to demonstrate its validity and the importance of electron-phonon interaction for the quantum transport. As it is based on the effective single-electron model, the method can be readily extended to time-dependent density functional theory.

76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-01

..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... electronic devices, including wireless communication devices, portable music and data processing devices, and... electronic devices, including wireless communication devices, portable music and data processing devices, and...

Single-chip microprocessor that communicates directly using light

NASA Astrophysics Data System (ADS)

Sun, Chen; Wade, Mark T.; Lee, Yunsup; Orcutt, Jason S.; Alloatti, Luca; Georgas, Michael S.; Waterman, Andrew S.; Shainline, Jeffrey M.; Avizienis, Rimas R.; Lin, Sen; Moss, Benjamin R.; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H.; Cook, Henry M.; Ou, Albert J.; Leu, Jonathan C.; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir M.

2015-12-01

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems—from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices8. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a ‘zero-change’ approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Single-chip microprocessor that communicates directly using light.

PubMed

Sun, Chen; Wade, Mark T; Lee, Yunsup; Orcutt, Jason S; Alloatti, Luca; Georgas, Michael S; Waterman, Andrew S; Shainline, Jeffrey M; Avizienis, Rimas R; Lin, Sen; Moss, Benjamin R; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H; Cook, Henry M; Ou, Albert J; Leu, Jonathan C; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J; Popović, Miloš A; Stojanović, Vladimir M

2015-12-24

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems--from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a 'zero-change' approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Low-energy electron-beam treatment as alternative for on-site sterilization of highly functionalized medical products - A feasibility study

NASA Astrophysics Data System (ADS)

Gotzmann, G.; Portillo, J.; Wronski, S.; Kohl, Y.; Gorjup, E.; Schuck, H.; Rögner, F. H.; Müller, M.; Chaberny, I. F.; Schönfelder, J.; Wetzel, C.

2018-09-01

Over the last decades, the medical device industry has grown significantly. Complex and highly functionalized medical devices and implants are being developed to improve patient treatment and to enhance their health-related quality of life. However, medical devices from this new generation often cannot be sterilized by standard methods such as autoclaving or sterilizing gases, as they are temperature sensitive, containing electronic components like sensors and microchips, or consist of polymers. Gamma irradiation for sterilization of such products is also problematic due to long processing times under highly reactive conditions resulting in material degradation or loss of functionality. Low-energy electron-beam treatment could enable irradiation sterilization of medical surfaces within seconds. This method is very fast in comparison to gamma irradiation because of its high dose rate and therefore degradation processes of polymers can be reduced or even prevented. Additionally, electron penetration depth can be precisely controlled to prevent damage of sensitive components like electronics and semiconductors. The presented study focuses on two key aspects: 1.) Can new and highly functionalized medical products in future be sterilized using low-energy electron-beam irradiation; and 2.) Is the low-energy electron-beam technology suitable to be set up on-site to speed up sterilization processing or make it available "just-in-time". To address these questions, different test specimens were chosen with complex geometry or electronic functional parts to gather information about the limitations and chances for this new approach. The test specimens were inoculated with clinical relevant test organisms (Pseudomonas aeruginosa) as well as with approved radiation resistant organisms (Deinococcus radiodurans and Bacillus pumilus) to prove the suitability of low-energy electron-beam treatment for the above-mentioned medical products. The calculation of the D10 value for B. pumilus revealed equal efficacy when compared to standard high-energy irradiation sterilization. All of the above-mentioned germs were successfully inactivated by low-energy electron-beam treatment when test specimens were inoculated with a germ load > 10^6 CFU and treated with doses ≥ 10 kGy (for B. pumilus and P. aeruginosa) and > 300 kGy (for D. radiodurans) respectively. As an example, for specialized electronic components to be sterilized, an impedance sensor for cell culture applications was sterilized and unimpaired functionality was demonstrated even after five repeated sterilization cycles to a total dose of 50 kGy. To address the second aspect of on-site suitability of this technology, the product handling for low-energy electron-beam treatment had to be adapted to minimize the size of the electron-beam facility. Therefore, a mini electron-beam source was used and a specialized sample holder and 3D-handling regime were developed to allow reproducible surface treatment for complex product geometries. Inactivation of B. pumilus inoculated medical screws (> 10^6 CFU) was successful using the developed handling procedure. In addition, a packaging material (PET12/PE50) for medical products was investigated for its suitability for low-energy irradiation sterilization. Biocompatibility assessment revealed the material to be eligible for this application as even overdoses did not impair the biocompatibility of the material. With these results, the principal suitability of low-energy electron-beam treatment for sterilization of medical products containing electronics like sensors is demonstrated. The low-energy technology and the specialized 3D-handling regime allow the on-site setup of the technology in hospitals, medical practices or any other point of care.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Portable electronic vision enhancement systems in comparison with optical magnifiers for near vision activities: an economic evaluation alongside a randomized crossover trial.

PubMed

Bray, Nathan; Brand, Andrew; Taylor, John; Hoare, Zoe; Dickinson, Christine; Edwards, Rhiannon T

2017-08-01

To determine the incremental cost-effectiveness of portable electronic vision enhancement system (p-EVES) devices compared with optical low vision aids (LVAs), for improving near vision visual function, quality of life and well-being of people with a visual impairment. An AB/BA randomized crossover trial design was used. Eighty-two participants completed the study. Participants were current users of optical LVAs who had not tried a p-EVES device before and had a stable visual impairment. The trial intervention was the addition of a p-EVES device to the participant's existing optical LVA(s) for 2 months, and the control intervention was optical LVA use only, for 2 months. Cost-effectiveness and cost-utility analyses were conducted from a societal perspective. The mean cost of the p-EVES intervention was £448. Carer costs were £30 (4.46 hr) less for the p-EVES intervention compared with the LVA only control. The mean difference in total costs was £417. Bootstrapping gave an incremental cost-effectiveness ratio (ICER) of £736 (95% CI £481 to £1525) for a 7% improvement in near vision visual function. Cost per quality-adjusted life year (QALY) ranged from £56 991 (lower 95% CI = £19 801) to £66 490 (lower 95% CI = £23 055). Sensitivity analysis varying the commercial price of the p-EVES device reduced ICERs by up to 75%, with cost per QALYs falling below £30 000. Portable electronic vision enhancement system (p-EVES) devices are likely to be a cost-effective use of healthcare resources for improving near vision visual function, but this does not translate into cost-effective improvements in quality of life, capability or well-being. © 2016 The Authors. Acta Ophthalmologica published by John Wiley & Sons Ltd on behalf of Acta Ophthalmologica Scandinavica Foundation and European Association for Vision & Eye Research.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

PubMed

Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

2018-03-28

The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

49 CFR 220.303 - General use of electronic devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would... 49 Transportation 4 2010-10-01 2010-10-01 false General use of electronic devices. 220.303 Section...

49 CFR 220.303 - General use of electronic devices.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would...

49 CFR 220.303 - General use of electronic devices.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use would...

Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak

2003-01-01

This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

An electronic implementation of amoeba anticipation

NASA Astrophysics Data System (ADS)

Ziegler, Martin; Ochs, Karlheinz; Hansen, Mirko; Kohlstedt, Hermann

2014-02-01

In nature, the capability of memorizing environmental changes and recalling past events can be observed in unicellular organisms like amoebas. Pershin and Di Ventra have shown that such learning behavior can be mimicked in a simple memristive circuit model consisting of an LC (inductance capacitance) contour and a memristive device. Here, we implement this model experimentally by using an Ag/TiO2- x /Al memristive device. A theoretical analysis of the circuit is used to gain insight into the functionality of this model and to give advice for the circuit implementation. In this respect, the transfer function, resonant frequency, and damping behavior for a varying resistance of the memristive device are discussed in detail.

Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

NASA Astrophysics Data System (ADS)

Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

2017-02-01

Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

NASA Astrophysics Data System (ADS)

Maji, Tuhin Kumar; Tiwary, Krishna Kanhaiya; Karmakar, Debjani

2017-05-01

Doping nature of MoSe2, one of the promising Graphene analogous device material, can be tuned by controlling the concentration of functional groups in Graphene oxide (GO)@MoSe2 heterostructure. In this study, by first-principles simulation, we have observed that GO can be used as a carrier injection layer for MoSe2, where n or p type carriers are introduced within MoSe2 layer depending on the type and concentration of functional moieties in it. Both n and p-type Schottky barrier height modulations are investigated for different modeled configurations of the heterostructure. This combinatorial heterostructure can be a promising material for future electronic device application.

Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Youngmin; Lee, Sejoon, E-mail: sejoon@dongguk.edu; Im, Hyunsik

2015-02-14

We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

Waves, particles, and interactions in reduced dimensions

NASA Astrophysics Data System (ADS)

Zhang, Yiming

This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.

The role of electron irradiation history in liquid cell transmission electron microscopy.

PubMed

Moser, Trevor H; Mehta, Hardeep; Park, Chiwoo; Kelly, Ryan T; Shokuhfar, Tolou; Evans, James E

2018-04-01

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC-TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the role of cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. These results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides.

The role of electron irradiation history in liquid cell transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moser, Trevor H.; Mehta, Hardeep; Park, Chiwoo

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC- TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the rolemore » of cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. These results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides.« less

The role of electron irradiation history in liquid cell transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moser, Trevor H.; Mehta, Hardeep; Park, Chiwoo

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC-TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the role ofmore » cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. Lastly, these results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides.« less

The role of electron irradiation history in liquid cell transmission electron microscopy

PubMed Central

Mehta, Hardeep

2018-01-01

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC-TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the role of cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. These results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides. PMID:29725619

The role of electron irradiation history in liquid cell transmission electron microscopy

DOE PAGES

Moser, Trevor H.; Mehta, Hardeep; Park, Chiwoo; ...

2018-04-20

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC-TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the role ofmore » cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. Lastly, these results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides.« less

Electron-Ion Dynamics with Time-Dependent Density Functional Theory: Towards Predictive Solar Cell Modeling: Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maitra, Neepa

2016-07-14

This project investigates the accuracy of currently-used functionals in time-dependent density functional theory, which is today routinely used to predict and design materials and computationally model processes in solar energy conversion. The rigorously-based electron-ion dynamics method developed here sheds light on traditional methods and overcomes challenges those methods have. The fundamental research undertaken here is important for building reliable and practical methods for materials discovery. The ultimate goal is to use these tools for the computational design of new materials for solar cell devices of high efficiency.

Electronic control of H+ current in a bioprotonic device with Gramicidin A and Alamethicin

NASA Astrophysics Data System (ADS)

Hemmatian, Zahra; Keene, Scott; Josberger, Erik; Miyake, Takeo; Arboleda, Carina; Soto-Rodríguez, Jessica; Baneyx, François; Rolandi, Marco

2016-10-01

In biological systems, intercellular communication is mediated by membrane proteins and ion channels that regulate traffic of ions and small molecules across cell membranes. A bioelectronic device with ion channels that control ionic flow across a supported lipid bilayer (SLB) should therefore be ideal for interfacing with biological systems. Here, we demonstrate a biotic-abiotic bioprotonic device with Pd contacts that regulates proton (H+) flow across an SLB incorporating the ion channels Gramicidin A (gA) and Alamethicin (ALM). We model the device characteristics using the Goldman-Hodgkin-Katz (GHK) solution to the Nernst-Planck equation for transport across the membrane. We derive the permeability for an SLB integrating gA and ALM and demonstrate pH control as a function of applied voltage and membrane permeability. This work opens the door to integrating more complex H+ channels at the Pd contact interface to produce responsive biotic-abiotic devices with increased functionality.

Integration of solid-state nanopores in a 0.5 μm cmos foundry process

PubMed Central

Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

2013-01-01

High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications

NASA Astrophysics Data System (ADS)

Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo

2017-04-01

The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

PubMed Central

Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

2016-01-01

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

PubMed

Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

2016-02-18

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

Solution-processed transparent blue organic light-emitting diodes with graphene as the top cathode

PubMed Central

Chang, Jung-Hung; Lin, Wei-Hsiang; Wang, Po-Chuan; Taur, Jieh-I; Ku, Ting-An; Chen, Wei-Ting; Yan, Shiang-Jiuan; Wu, Chih-I

2015-01-01

Graphene thin films have great potential to function as transparent electrodes in organic electronic devices, due to their excellent conductivity and high transparency. Recently, organic light-emitting diodes (OLEDs)have been successfully demonstrated to possess high luminous efficiencies with p-doped graphene anodes. However, reliable methods to fabricate n-doped graphene cathodes have been lacking, which would limit the application of graphene in flexible electronics. In this paper, we demonstrate fully solution-processed OLEDs with n-type doped multilayer graphene as the top electrode. The work function and sheet resistance of graphene are modified by an aqueous process which can also transfer graphene on organic devices as the top electrodes. With n-doped graphene layers used as the top cathode, all-solution processed transparent OLEDs can be fabricated without any vacuum process. PMID:25892370

New nanocomposite surfaces and thermal interface materials based on mesoscopic microspheres, polymers and graphene flakes

NASA Astrophysics Data System (ADS)

Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna

2018-04-01

In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Functional graded fullerene derivatives for improving the fill factor and device stability of inverted-type perovskite solar cells.

PubMed

Chiu, Kuo Yuan; Chang, Sheng Hsiung; Huang, Wei-Chen; Cheng, Hsin-Ming; Shaw, Hsin; Yeh, Shih-Chieh; Chen, Chin-Ti; Su, Yuhlong Oliver; Chen, Sheng-Hui; Wu, Chun-Guey

2018-07-27

A graded fullerene derivative thin film was used as a dual-functional electron transport layer (ETL) in CH 3 NH 3 PbI 3 (MAPbI 3 ) solar cells, to improve the fill factor (FF) and device stability. The graded ETL was made by mixing phenyl-C 61 -butyric acid methyl ester (PCBM) molecules and C 60 -diphenylmethanofullerene-oligoether (C 60 -DPM-OE) molecules using the spin-coating method. The formation of the graded ETLs can be due to the phase separation between hydrophobic PCBM and hydrophilic C 60 -DPM-OE, which was confirmed by XPS depth-profile analysis and an electron energy-loss spectroscope. Comprehensive studies were carried out to explore the characteristics of the graded ETLs in MAPbI 3 solar cells, including the surface properties, electronic energy levels, molecular packing properties and energy transfer dynamics. The elimination of the s-shape in the current density-voltage curves results in an increase in the FF, which originates from the smooth contact between the C 60 -DPM-OE and hydrophilic MAPbI 3 and the formation of the more ordered ETL. There was an improvement in device stability mainly due to the decrease in the photothermal induced morphology change of the graded ETLs fabricated from two fullerene derivatives with distinct hydrophilicity. Consequently, such a graded ETL provides dual-functional capabilities for the realization of stable high-performance MAPbI 3 solar cells.

Functional graded fullerene derivatives for improving the fill factor and device stability of inverted-type perovskite solar cells

NASA Astrophysics Data System (ADS)

Chiu, Kuo Yuan; Hsiung Chang, Sheng; Huang, Wei-Chen; Cheng, Hsin-Ming; Shaw, Hsin; Yeh, Shih-Chieh; Chen, Chin-Ti; Su, Yuhlong Oliver; Chen, Sheng-Hui; Wu, Chun-Guey

2018-07-01

A graded fullerene derivative thin film was used as a dual-functional electron transport layer (ETL) in CH3NH3PbI3 (MAPbI3) solar cells, to improve the fill factor (FF) and device stability. The graded ETL was made by mixing phenyl-C61-butyric acid methyl ester (PCBM) molecules and C60-diphenylmethanofullerene-oligoether (C60-DPM-OE) molecules using the spin-coating method. The formation of the graded ETLs can be due to the phase separation between hydrophobic PCBM and hydrophilic C60-DPM-OE, which was confirmed by XPS depth-profile analysis and an electron energy-loss spectroscope. Comprehensive studies were carried out to explore the characteristics of the graded ETLs in MAPbI3 solar cells, including the surface properties, electronic energy levels, molecular packing properties and energy transfer dynamics. The elimination of the s-shape in the current density–voltage curves results in an increase in the FF, which originates from the smooth contact between the C60-DPM-OE and hydrophilic MAPbI3 and the formation of the more ordered ETL. There was an improvement in device stability mainly due to the decrease in the photothermal induced morphology change of the graded ETLs fabricated from two fullerene derivatives with distinct hydrophilicity. Consequently, such a graded ETL provides dual-functional capabilities for the realization of stable high-performance MAPbI3 solar cells.

Conformation-based signal transfer and processing at the single-molecule level

NASA Astrophysics Data System (ADS)

Li, Chao; Wang, Zhongping; Lu, Yan; Liu, Xiaoqing; Wang, Li

2017-11-01

Building electronic components made of individual molecules is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of molecular devices and circuits for signal transmission and processing at room temperature has proven challenging. Here, we present room-temperature intermolecular signal transfer and processing using SnCl2Pc molecules on a Cu(100) surface. The in-plane orientations of the molecules are effectively coupled via intermolecular interaction and serve as the information carrier. In the coupled molecular arrays, the signal can be transferred from one molecule to another in the in-plane direction along predesigned routes and processed to realize logical operations. These phenomena enable the use of molecules displaying intrinsic bistable states as complex molecular devices and circuits with novel functions.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

NASA Astrophysics Data System (ADS)

Goharrizi, A. Yazdanpanah; Sanaeepur, M.; Sharifi, M. J.

2015-09-01

Device performance of 10 nm length armchair graphene nanoribbon field effect transistors with 1.5 nm and 4 nm width (13 and 33 atoms in width respectively) are compared in terms of Ion /Ioff , trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4 nm wide device with boron nitride doping shows improved performance with respect to the 1.5 nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.

High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications.

PubMed

Chen, Jun-Yang; Lau, Yong-Chang; Coey, J M D; Li, Mo; Wang, Jian-Ping

2017-02-02

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

1998-08-25

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

The role of the tunneling matrix element and nuclear reorganization in the design of quantum-dot cellular automata molecules

NASA Astrophysics Data System (ADS)

Henry, Jackson; Blair, Enrique P.

2018-02-01

Mixed-valence molecules provide an implementation for a high-speed, energy-efficient paradigm for classical computing known as quantum-dot cellular automata (QCA). The primitive device in QCA is a cell, a structure with multiple quantum dots and a few mobile charges. A single mixed-valence molecule can function as a cell, with redox centers providing quantum dots. The charge configuration of a molecule encodes binary information, and device switching occurs via intramolecular electron transfer between dots. Arrays of molecular cells adsorbed onto a substrate form QCA logic. Individual cells in the array are coupled locally via the electrostatic electric field. This device networking enables general-purpose computing. Here, a quantum model of a two-dot molecule is built in which the two-state electronic system is coupled to the dominant nuclear vibrational mode via a reorganization energy. This model is used to explore the effects of the electronic inter-dot tunneling (coupling) matrix element and the reorganization energy on device switching. A semi-classical reduction of the model also is made to investigate the competition between field-driven device switching and the electron-vibrational self-trapping. A strong electron-vibrational coupling (high reorganization energy) gives rise to self-trapping, which inhibits the molecule's ability to switch. Nonetheless, there remains an expansive area in the tunneling-reorganization phase space where molecules can support adequate tunneling. Thus, the relationship between the tunneling matrix element and the reorganization energy affords significant leeway in the design of molecules viable for QCA applications.

Density-Functional Theory description of transport in the single-electron transistor

NASA Astrophysics Data System (ADS)

Zawadzki, Krissia; Oliveira, Luiz N.

The Kondo effect governs the low-temperature transport properties of the single electron transistor (SET), a quantum dot bridging two electron gases. In the weak coupling limit, for odd dot occupation, the gate-potential profile of the conductance approaches a step, known as the Kondo plateau. The plateau and other SET properties being well understood on the basis of the Anderson model, more realistic (i. e., DFT) descriptions of the device are now desired. This poses a challenge, since the SET is strongly correlated. DFT computations that reproduce the conductance plateau have been reported, e. g., by, which rely on the exact functional provided by the Bethe-Ansatz solution for the Anderson model. Here, sticking to DFT tradition, we employ a functional derived from a homogeneous system: the parametrization of the Lieb-Wu solution for the Hubbard model due to. Our computations reproduce the plateau and yield other results in accurate agreement with the exact diagonalization of the Anderson Hamiltonian. The prospects for extensions to realistic descriptions of two-dimensional nanostructured devices will be discussed. Luiz N. Oliveira thanks CNPq (312658/2013-3) and Krissia Zawadzki thanks CNPq (140703/2014-4) for financial support.

The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

PubMed

Caliskan, S; Laref, A

2014-07-14

Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

Organic photovoltaic devices with a single layer geometry (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Aizawa, Naoya; Larrain, Felipe A.; Chou, Wen-Fang; Perrotta, Alberto; Graham, Samuel; Kippelen, Bernard

2016-09-01

Organic photovoltaics (OPV) can lead to a low cost and short energy payback time alternative to existing photovoltaic technologies. However, to fulfill this promise, power conversion efficiencies must be improved and simultaneously the architecture of the devices and their processing steps need to be further simplified. In the most efficient devices to date, the functions of photocurrent generation, and hole/electron collection are achieved in different layers adding complexity to the device fabrication. In this talk, we present a novel approach that yields devices in which all these functions are combined in a single layer. Specifically, we report on bulk heterojunction devices in which amine-containing polymers are first mixed in the solution together with the donor and acceptor materials that form the active layer. A single-layer coating yields a self-forming bottom electron-collection layer comprised of the amine-containing polymer (e.g. PEIE). Hole-collection is achieved by subsequent immersion of this single layer in a solution of a polyoxometalate (e.g. phosphomolybdic acid (PMA)) leading to an electrically p-doped region formed by the diffusion of the dopant molecules into the bulk. The depth of this doped region can be controlled with values up to tens of nm by varying the immersion time. Devices with a single 500 nm-thick active layer of P3HT:ICBA processed using this method yield power conversion efficiency (PCE) values of 4.8 ± 0.3% at 1 sun and demonstrate a performance level superior to that of benchmark three-layer devices with separate layers of PEIE/P3HT:ICBA/MoOx (4.1 ± 0.4%). Devices remain stable after shelf lifetime experiments carried-out at 60 °C over 280 h.

The TELEC - A plasma type of direct energy converter. [Thermo-Electronic Laser Energy Converter for electric power generation

NASA Technical Reports Server (NTRS)

Britt, E. J.

1978-01-01

The Thermo-Electronic Laser Energy Converter (TELEC) is a high-power density plasma device designed to convert a 10.6-micron CO2 laser beam into electric power. Electromagnetic radiation is absorbed in plasma electrons, creating a high-electron temperature. Energetic electrons diffuse from the plasma and strike two electrodes having different areas. The larger electrode collects more electrons and there is a net transport of current. An electromagnetic field is generated in the external circuit. A computer program has been designed to analyze TELEC performance allowing parametric variation for optimization. Values are presented for TELEC performance as a function of cesium pressure and for current density and efficiency as a function of output voltage. Efficiency is shown to increase with pressure, reaching a maximum over 45%.

Device for providing high-intensity ion or electron beam

DOEpatents

McClanahan, Edwin D.; Moss, Ronald W.

1977-01-01

A thin film of a low-thermionic-work-function material is maintained on the cathode of a device for producing a high-current, low-pressure gas discharge by means of sputter deposition from an auxiliary electrode. The auxiliary electrode includes a surface with a low-work-function material, such as thorium, uranium, plutonium or one of the rare earth elements, facing the cathode but at a disposition and electrical potential so as to extract ions from the gas discharge and sputter the low-work-function material onto the cathode. By continuously replenishing the cathode film, high thermionic emissions and ion plasmas can be realized and maintained over extended operating periods.

Acute effects of using an electronic nicotine-delivery device (electronic cigarette) on myocardial function: comparison with the effects of regular cigarettes.

PubMed

Farsalinos, Konstantinos E; Tsiapras, Dimitris; Kyrzopoulos, Stamatis; Savvopoulou, Maria; Voudris, Vassilis

2014-06-23

Electronic cigarettes have been developed and marketed in recent years as smoking substitutes. However, no studies have evaluated their effects on the cardiovascular system. The purpose of this study was to examine the immediate effects of electronic cigarette use on left ventricular (LV) function, compared to the well-documented acute adverse effects of smoking. Echocardiographic examinations were performed in 36 healthy heavy smokers (SM, age 36 ± 5 years) before and after smoking 1 cigarette and in 40 electronic cigarette users (ECIG, age 35 ± 5 years) before and after using the device with "medium-strength" nicotine concentration (11 mg/ml) for 7 minutes. Mitral flow diastolic velocities (E, A), their ratio (E/A), deceleration time (DT), isovolumetric relaxation time (IVRT) and corrected-to-heart rate IVRT (IVRTc) were measured. Mitral annulus systolic (Sm), and diastolic (Em, Am) velocities were estimated. Myocardial performance index was calculated from Doppler flow (MPI) and tissue Doppler (MPIt). Longitudinal deformation measurements of global strain (GS), systolic (SRs) and diastolic (SRe, SRa) strain rate were also performed. Baseline measurements were similar in both groups. In SM, IVRT and IVRTc were prolonged, Em and SRe were decreased, and both MPI and MPIt were elevated after smoking. In ECIG, no differences were observed after device use. Comparing after-use measurements, ECIG had higher Em (P = 0.032) and SRe (P = 0.022), and lower IVRTc (P = 0.011), MPI (P = 0.001) and MPIt (P = 0.019). The observed differences were significant even after adjusting for changes in heart rate and blood pressure. Although acute smoking causes a delay in myocardial relaxation, electronic cigarette use has no immediate effects. Electronic cigarettes' role in tobacco harm reduction should be studied intensively in order to determine whether switching to electronic cigarette use may have long-term beneficial effects on smokers' health. Current Controlled Trials ISRCTN16974547.

Single Molecule Conductance of Oligothiophene Derivatives

NASA Astrophysics Data System (ADS)

Dell, Emma J.

This thesis studies the electronic properties of small organic molecules based on the thiophene motif. If we are to build next-generation devices, advanced materials must be designed which possess requisite electronic functionality. Molecules present attractive candidates for these ad- vanced materials since nanoscale devices are particularly sought after. However, selecting a molecule that is suited to a certain electronic function remains a challenge, and characterization of electronic behavior is therefore critical. Single molecule conductance measurements are a powerful tool to determine properties on the nanoscale and, as such, can be used to investigate novel building blocks that may fulfill the design requirements of next-generation devices. Combining these conductance results with strategic chemical synthesis allows for the development of new families of molecules that show attractive properties for future electronic devices. Since thiophene rings are the fruitflies of organic semiconductors on the bulk scale, they present an intriguing starting point for building functional materials on the nanoscale, and therefore form the structural basis of all molecules studied herein. First, the single-molecule conductance of a family of bithiophene derivatives was measured. A broad distribution in the single-molecule conductance of bithiophene was found compared with that of a biphenyl. This increased breadth in the conductance distribution was shown to be explained by the difference in 5-fold symmetry of thiophene rings as compared to the 6-fold symmetry of benzene rings. The reduced symmetry of thiophene rings results in a restriction on the torsion angle space available to these molecules when bound between two metal electrodes in a junction, causing each molecular junction to sample a different set of conformers in the conductance measurements. By contrast, the rotations of biphenyl are essentially unimpeded by junction binding, allowing each molecular junction to sample similar conformers. This work demonstrates that the conductance of bithiophene displays a strong dependence on the conformational fluctuations accessible within a given junction configuration, and that the symmetry of such small molecules can significantly influence their conductance behavior. Next, the single-molecule conductance of a family of oligothiophenes comprising one to six thiophene units was measured. An anomalous behavior was found: the peak of the conductance histogram distribution did not follow a clear exponential decay with increasing number of thiophene units in the chain. The electronic properties of the materials were characterized by optical spectroscopy and electrochemistry to gain an understanding of the factors affecting the conductance of these molecules. Different conformers in the junction were postulated to be a contributing factor to the anomalous trend in the observed conductance as a function of molecule length. Then, the electronic properties of the thiophene-1,1-dioxide unit were investigated. These motifs have become synthetically accessible in the last decade, due to Rozen's unprecedentedly potent oxidizing reagent - HOF˙CH 3CN - which has been shown to be powerful yet selective enough to oxidize thiophenes in various environments. The resulting thiophene-1,1-dioxides show great promise for electronic devices. The oxidation chemistry of thiophenes was expanded and tuning of the frontier energy levels was demonstrated through combining electron poor and electron rich units. Finally, charge carriers in single-molecule junctions were shown to be tunable within a family of molecules containing these thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed in order to increase electron affinity, maintain delocalized frontier orbitals, while significantly decreasing the transport gap. Through thermopower measurements, the dominant charge carriers were shown to change from holes to electrons as the number of TDO units was increased. This resulted in a unique system in which the charge carrier depends on backbone length, providing a new means to tune p- and n-type transport in organic materials. Taken together, the results presented in this thesis offer an insight into how molecular symme- try and the accessible conformers within a junction have important consequences on conductance behavior. Additionally, thiophene-1,1-dioxide is shown to be an exciting unit for single molecule devices, especially when combined with electron rich thiophene flanking groups. By demon- strating, for the first time, a change in conductance pathway with molecular length, this work provides a framework for using frontier orbital levels to strategically design electronic building blocks.

Organic electronic devices via interface engineering

NASA Astrophysics Data System (ADS)

Xu, Qianfei

This dissertation focuses on interface engineering and its influence on organic electronic devices. A comprehensive review of interface studies in organic electronic devices is presented in Chapter 1. By interface engineering at the cathode contact, an ultra-high efficiency green polymer light emitting diode is demonstrated in Chapter 2. The interface modification turns out to be solution processable by using calcium acetylacetonate, donated by Ca(acac)2. The device structure is Induim Tin Oxide (ITO)/3,4-polyethylenedioxythiophene-polystyrene-sulfonate (PEDOT)/Green polyfluorene/Ca(acac) 2/Al. Based on this structure, we obtained device efficiencies as high as 28 cd/A at 2650 cd/m2, which is about a 3 times improvement over previous devices. The mechanism of this nano-layer has been studied by I-L-V measurements, photovoltaic measurements, XPS/UPS studies, impedance measurements as well as transient EL studies. The interfacial layer plays a crucial role for the efficiency improvement. It is believed to work as a hole blocking layer as well as an electron injection layer. Meanwhile, a systematic study on ITO electrodes is also carried out in Chapter 4. By engineering the interface at ITO electrode, the device lifetime has been improved. In Chapter 5, very bright white emission PLEDs are fabricated based on blue polyfluorene (PF) doped with 1 wt% 6, 8, 15, 17-tetraphyenyl-1.18, 4.5, 9.10, 13.14-tetrabenzoheptacene (TBH). The maximum luminance exceeds 20,000 cd/m2. The maximum luminance efficiency is 3.55 cd/A at 4228 cd/m2 while the maximum power efficiency is 1.6 lm/W at 310 cd/m2. The white color is achieved by an incomplete energy transfer from blue PF to TBH. The devices show super stable CIE coordinates as a function of current density. The interface engineering is also applied to memory devices. In Chapter 6, a novel nonvolatile memory device is fabricated by inserting a buffer layer at the anode contact. Devices with the structure of Cu/Buffer-layer/organic layer/Cu show very attractive electrical bi-stability. The switching mechanism is believed to origin from by the different copper ion concentrations in the organic layer. This opens up a promising way to achieve high-performance organic electronic devices.

Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses

NASA Astrophysics Data System (ADS)

Lin, Yu-Pu; Bennett, Christopher H.; Cabaret, Théo; Vodenicarevic, Damir; Chabi, Djaafar; Querlioz, Damien; Jousselme, Bruno; Derycke, Vincent; Klein, Jacques-Olivier

2016-09-01

Multiple modern applications of electronics call for inexpensive chips that can perform complex operations on natural data with limited energy. A vision for accomplishing this is implementing hardware neural networks, which fuse computation and memory, with low cost organic electronics. A challenge, however, is the implementation of synapses (analog memories) composed of such materials. In this work, we introduce robust, fastly programmable, nonvolatile organic memristive nanodevices based on electrografted redox complexes that implement synapses thanks to a wide range of accessible intermediate conductivity states. We demonstrate experimentally an elementary neural network, capable of learning functions, which combines four pairs of organic memristors as synapses and conventional electronics as neurons. Our architecture is highly resilient to issues caused by imperfect devices. It tolerates inter-device variability and an adaptable learning rule offers immunity against asymmetries in device switching. Highly compliant with conventional fabrication processes, the system can be extended to larger computing systems capable of complex cognitive tasks, as demonstrated in complementary simulations.

Oxide Heteroepitaxy for Flexible Optoelectronics.

PubMed

Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Qui, Le Van; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao

2016-11-30

The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

HED-TIE: A wafer-scale approach for fabricating hybrid electronic devices with trench isolated electrodes

NASA Astrophysics Data System (ADS)

Banerjee, Sreetama; Bülz, Daniel; Solonenko, Dmytro; Reuter, Danny; Deibel, Carsten; Hiller, Karla; Zahn, Dietrich R. T.; Salvan, Georgeta

2017-05-01

Organic-inorganic hybrid electronic devices (HEDs) offer opportunities for functionalities that are not easily obtainable with either organic or inorganic materials individually. In the strive for down-scaling the channel length in planar geometry HEDs, the best results were achieved with electron beam lithography or nanoimprint lithography. Their application on the wafer level is, however, cost intensive and time consuming. Here, we propose trench isolated electrode (TIE) technology as a fast, cost effective, wafer-level approach for the fabrication of planar HEDs with electrode gaps in the range of 100 nm. We demonstrate that the formation of the organic channel can be realized by deposition from solution as well as by the thermal evaporation of organic molecules. To underline one key feature of planar HED-TIEs, namely full accessibility of the active area of the devices by external stimuli such as light, 6,13-bis (triisopropylsilylethynyl) (TIPS)-pentacene/Au HED-TIEs are successfully tested for possible application as hybrid photodetectors in the visible spectral range.

Robust, functional nanocrystal solids by infilling with atomic layer deposition.

PubMed

Liu, Yao; Gibbs, Markelle; Perkins, Craig L; Tolentino, Jason; Zarghami, Mohammad H; Bustamante, Jorge; Law, Matt

2011-12-14

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. (1) The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm2 V(-1) s(-1). Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses.

PubMed

Lin, Yu-Pu; Bennett, Christopher H; Cabaret, Théo; Vodenicarevic, Damir; Chabi, Djaafar; Querlioz, Damien; Jousselme, Bruno; Derycke, Vincent; Klein, Jacques-Olivier

2016-09-07

Multiple modern applications of electronics call for inexpensive chips that can perform complex operations on natural data with limited energy. A vision for accomplishing this is implementing hardware neural networks, which fuse computation and memory, with low cost organic electronics. A challenge, however, is the implementation of synapses (analog memories) composed of such materials. In this work, we introduce robust, fastly programmable, nonvolatile organic memristive nanodevices based on electrografted redox complexes that implement synapses thanks to a wide range of accessible intermediate conductivity states. We demonstrate experimentally an elementary neural network, capable of learning functions, which combines four pairs of organic memristors as synapses and conventional electronics as neurons. Our architecture is highly resilient to issues caused by imperfect devices. It tolerates inter-device variability and an adaptable learning rule offers immunity against asymmetries in device switching. Highly compliant with conventional fabrication processes, the system can be extended to larger computing systems capable of complex cognitive tasks, as demonstrated in complementary simulations.

Atomic and electronic structure of exfoliated black phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ryan J.; Topsakal, Mehmet; Jeong, Jong Seok

2015-11-15

Black phosphorus, a layered two-dimensional crystal with tunable electronic properties and high hole mobility, is quickly emerging as a promising candidate for future electronic and photonic devices. Although theoretical studies using ab initio calculations have tried to predict its atomic and electronic structure, uncertainty in its fundamental properties due to a lack of clear experimental evidence continues to stymie our full understanding and application of this novel material. In this work, aberration-corrected scanning transmission electron microscopy and ab initio calculations are used to study the crystal structure of few-layer black phosphorus. Directly interpretable annular dark-field images provide a three-dimensional atomic-resolutionmore » view of this layered material in which its stacking order and all three lattice parameters can be unambiguously identified. In addition, electron energy-loss spectroscopy (EELS) is used to measure the conduction band density of states of black phosphorus, which agrees well with the results of density functional theory calculations performed for the experimentally determined crystal. Furthermore, experimental EELS measurements of interband transitions and surface plasmon excitations are also consistent with simulated results. Finally, the effects of oxidation on both the atomic and electronic structure of black phosphorus are analyzed to explain observed device degradation. The transformation of black phosphorus into amorphous PO{sub 3} or H{sub 3}PO{sub 3} during oxidation may ultimately be responsible for the degradation of devices exposed to atmosphere over time.« less

Moisture-triggered physically transient electronics

PubMed Central

Gao, Yang; Zhang, Ying; Wang, Xu; Sim, Kyoseung; Liu, Jingshen; Chen, Ji; Feng, Xue; Xu, Hangxun; Yu, Cunjiang

2017-01-01

Physically transient electronics, a form of electronics that can physically disappear in a controllable manner, is very promising for emerging applications. Most of the transient processes reported so far only occur in aqueous solutions or biofluids, offering limited control over the triggering and degradation processes. We report novel moisture-triggered physically transient electronics, which exempt the needs of resorption solutions and can completely disappear within well-controlled time frames. The triggered transient process starts with the hydrolysis of the polyanhydride substrate in the presence of trace amounts of moisture in the air, a process that can generate products of corrosive organic acids to digest various inorganic electronic materials and components. Polyanhydride is the only example of polymer that undergoes surface erosion, a distinct feature that enables stable operation of the functional devices over a predefined time frame. Clear advantages of this novel triggered transience mode include that the lifetime of the devices can be precisely controlled by varying the moisture levels and changing the composition of the polymer substrate. The transience time scale can be tuned from days to weeks. Various transient devices, ranging from passive electronics (such as antenna, resistor, and capacitor) to active electronics (such as transistor, diodes, optoelectronics, and memories), and an integrated system as a platform demonstration have been developed to illustrate the concept and verify the feasibility of this design strategy. PMID:28879237

Study of transmission function and electronic transport in one dimensional silver nanowire: Ab-initio method using density functional theory (DFT)

NASA Astrophysics Data System (ADS)

Thakur, Anil; Kashyap, Rajinder

2018-05-01

Single nanowire electrode devices have their application in variety of fields which vary from information technology to solar energy. Silver nanowires, made in an aqueous chemical reduction process, can be reacted with gold salt to create bimetallic nanowires. Silver nanowire can be used as electrodes in batteries and have many other applications. In this paper we investigated structural and electronic transport properties of Ag nanowire using density functional theory (DFT) with SIESTA code. Electronic transport properties of Ag nanowire have been studied theoretically. First of all an optimized geometry for Ag nanowire is obtained using DFT calculations, and then the transport relations are obtained using NEGF approach. SIESTA and TranSIESTA simulation codes are used in the calculations respectively. The electrodes are chosen to be the same as the central region where transport is studied, eliminating current quantization effects due to contacts and focusing the electronic transport study to the intrinsic structure of the material. By varying chemical potential in the electrode regions, an I-V curve is traced which is in agreement with the predicted behavior. Bulk properties of Ag are in agreement with experimental values which make the study of electronic and transport properties in silver nanowires interesting because they are promising materials as bridging pieces in nanoelectronics. Transmission coefficient and V-I characteristic of Ag nano wire reveals that silver nanowire can be used as an electrode device.

Accuracy of two root canal length measurement devices integrated into rotary endodontic motors when removing gutta-percha from root-filled teeth.

PubMed

Uzun, O; Topuz, O; Tinaz, C; Nekoofar, M H; Dummer, P M H

2008-09-01

To evaluate ex vivo the accuracy of the integrated electronic root canal length measurement devices within TCM Endo V and Tri Auto ZX motors whilst removing gutta-percha and sealer from filled root canals. Forty freshly extracted maxillary and mandibular incisor teeth with mature apices were selected. Following access cavity preparation, the length of the root canals were measured visually 0.5 mm short of the major foramen (TL). The canals were prepared using the HERO 642 system and then filled with gutta-percha and AH26 sealer using a lateral compaction technique. After 7 days the coronal temporary filling was removed and the roots mounted in an alginate experimental model. The roots were then randomly divided in two groups. The access cavities were filled with chloroform to soften the gutta-percha and allow its penetration using the Tri Auto ZX and the TCM Endo V devices in groups 1 and 2, respectively. The 'automatic apical reverse function' (ARL) of both devices was set to start at the 0.5 setting and the rotary instrument inserted inside the root canal until a beeping sound was heard and the rotation of the file stopped automatically. Once the auto reverse function had been initiated, the foot pedal of the motor was inactivated and the rubber stop placed against the reference point. The distance between the file tip and rubber stop was measured using a digital calliper to 0.01 mm accuracy (ARL). Then, a size 20, 0.02 taper instrument was attached to each device and inserted into the root canals without rotary motion until the integrated ERCLMDs positioned the instrument tips at the 0.5 setting as suggested by the devices. This length was again measured using a digital calliper (EL). The Mann-Whitney U-test was used to investigate statistical differences between the true canal length and those indicated by the two devices when used in 'automatic ARL and when inserted passively (EL). In the presence of gutta-percha, sealer and chloroform, the auto-reverse function for the Tri Auto ZX and TCM Endo V, set to start at 0.5 level, was initiated beyond the foramen in 60% and 95% of the samples, respectively during active (rotary) penetration of the instruments. There was a statistically significant difference between the devices for the mean discrepancies between the length at which the auto reverse function was initiated and the true length (P < 0.001). Electronic detection of the apical terminus when the instruments were introduced passively (not rotating) was beyond the foramen in 20% and 37% of cases in the Tri Auto ZX group and the TCM Endo V group, respectively. There was a statistically significant difference between the devices for the mean discrepancies between the electronically determined (passive) length and true length (P < 0.01). The auto reverse function of the Tri Auto ZX and TCM Endo V devices, set to start at 0.5 level, were initiated beyond the foramen in the majority of root-filled teeth during active (rotating) penetration of root filling material. Thus, this automatic function must be used with caution when removing gutta-percha root fillings. There were significant differences between the accuracy of measurements in active (rotating) and passive (not-rotating) modes; both devices were more accurate when used in passive mode. However, the Tri Auto ZX was significantly more accurate in a greater proportion of cases.

Assistive technology for memory support in dementia.

PubMed

Van der Roest, Henriëtte G; Wenborn, Jennifer; Pastink, Channah; Dröes, Rose-Marie; Orrell, Martin

2017-06-11

The sustained interest in electronic assistive technology in dementia care has been fuelled by the urgent need to develop useful approaches to help support people with dementia at home. Also the low costs and wide availability of electronic devices make it more feasible to use electronic devices for the benefit of disabled persons. Information Communication Technology (ICT) devices designed to support people with dementia are usually referred to as Assistive Technology (AT) or Electronic Assistive Technology (EAT). By using AT in this review we refer to electronic assistive devices. A range of AT devices has been developed to support people with dementia and their carers to manage their daily activities and to enhance safety, for example electronic pill boxes, picture phones, or mobile tracking devices. Many are commercially available. However, the usefulness and user-friendliness of these devices are often poorly evaluated. Although reviews of (electronic) memory aids do exist, a systematic review of studies focusing on the efficacy of AT for memory support in people with dementia is lacking. Such a review would guide people with dementia and their informal and professional carers in selecting appropriate AT devices. Primary objectiveTo assess the efficacy of AT for memory support in people with dementia in terms of daily performance of personal and instrumental activities of daily living (ADL), level of dependency, and admission to long-term care. Secondary objectiveTo assess the impact of AT on: users (autonomy, usefulness and user-friendliness, adoption of AT); cognitive function and neuropsychiatric symptoms; need for informal and formal care; perceived quality of life; informal carer burden, self-esteem and feelings of competence; formal carer work satisfaction, workload and feelings of competence; and adverse events. We searched ALOIS, the Specialised Register of the Cochrane Dementia and Cognitive Improvement Group (CDCIG), on 10 November 2016. ALOIS is maintained by the Information Specialists of the CDCIG and contains studies in the areas of dementia prevention, dementia treatment and cognitive enhancement in healthy people. We also searched the following list of databases, adapting the search strategy as necessary: Centre for Reviews and Dissemination (CRD) Databases, up to May 2016; The Collection of Computer Science Bibliographies; DBLP Computer Science Bibliography; HCI Bibliography: Human-Computer Interaction Resources; and AgeInfo, all to June 2016; PiCarta; Inspec; Springer Link Lecture Notes; Social Care Online; and IEEE Computer Society Digital Library, all to October 2016; J-STAGE: Japan Science and Technology Information Aggregator, Electronic; and Networked Computer Science Technical Reference Library (NCSTRL), both to November 2016; Computing Research Repository (CoRR) up to December 2016; and OT seeker; and ADEAR, both to February 2017. In addition, we searched Google Scholar and OpenSIGLE for grey literature. We intended to review randomised controlled trials (RCTs) and clustered randomised trials with blinded assessment of outcomes that evaluated an electronic assistive device used with the single aim of supporting memory function in people diagnosed with dementia. The control interventions could either be 'care (or treatment) as usual' or non-technological psychosocial interventions (including interventions that use non-electronic assistive devices) also specifically aimed at supporting memory. Outcome measures included activities of daily living, level of dependency, clinical and care-related outcomes (for example admission to long-term care), perceived quality of life and well-being, and adverse events resulting from the use of AT; as well as the effects of AT on carers. Two review authors independently screened all titles and abstracts identified by the search. We identified no studies which met the inclusion criteria. This review highlights the current lack of high-quality evidence to determine whether AT is effective in supporting people with dementia to manage their memory problems.

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

PubMed

Yu, Lili; Lee, Yi-Hsien; Ling, Xi; Santos, Elton J G; Shin, Yong Cheol; Lin, Yuxuan; Dubey, Madan; Kaxiras, Efthimios; Kong, Jing; Wang, Han; Palacios, Tomás

2014-06-11

Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

Impact of electronic aids to daily living on the lives of persons with cervical spinal cord injuries.

PubMed

Rigby, Patricia; Ryan, Stephen; Joos, Shone; Cooper, Barbara; Jutai, Jeffrey W; Steggles, Iielizabeth

2005-01-01

Structured interviews were used to evaluate the impact of electronic aids to daily living (EADL) on functional abilities and psychosocial well-being. The participants included 32 adults (26 men, 6 women; mean age of 39 years) with cervical spinal cord injuries. The experiences of 16 EADL users were compared with a control group of 16 nonusers, using the Functional Autonomy Measuring Scale, the Lincoln Outcome Measures for Environmental Controls, and the Psychosocial Impact of Assistive Devices Scale. Results show EADL users had significantly better performance (p < .05) than nonusers for instrumental activities of daily living and for 75% of 12 daily tasks. Many non-users had hands-free control of phones only, whereas EADL users had control over many other household devices, which optimized their independence. The psychosocial impact of this technology was very positive for competence, adaptability, and self-esteem. In conclusion, functional abilities were greater for a variety of daily tasks, and psychosocial impact was positive when EADLs were used.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Nanoscale Morphology of PTB7 Based Organic Photovoltaics as a Function of Fullerene Size

DOE PAGES

Roehling, John D.; Baran, Derya; Sit, Joseph; ...

2016-08-08

High efficiency polymer:fullerene photovoltaic device layers self-assemble with hierarchical features from ångströms to 100’s of nanometers. The feature size, shape, composition, orientation, and order all contribute to device efficiency and are simultaneously difficult to study due to poor contrast between carbon based materials. This study seeks to increase device efficiency and simplify morphology measurements by replacing the typical fullerene acceptor with endohedral fullerene Lu 3N@PC 80BEH. The metal atoms give excellent scattering contrast for electron beam and x-ray experiments. Additionally, Lu 3N@PC 80BEH has a lower electron affinity than standard fullerenes, which can raise the open circuit voltage of photovoltaicmore » devices. Electron microscopy techniques are used to produce a detailed account of morphology evolution in mixtures of Lu 3N@PC 80BEH with the record breaking donor polymer, PTB7 and coated using solvent mixtures. We demonstrate that common solvent additives like 1,8-diiodooctane or chloronapthalene do not improve the morphology of endohedral fullerene devices as expected. The poor device performance is attributed to the lack of mutual miscibility between this particular polymer:fullerene combination and to co-crystallization of Lu 3N@PC 80BEH with 1,8-diiodooctane. This negative result explains why solvent additives mixtures are not necessarily a morphology cure-all.« less

Nanoscale Morphology of PTB7 Based Organic Photovoltaics as a Function of Fullerene Size

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roehling, John D.; Baran, Derya; Sit, Joseph

High efficiency polymer:fullerene photovoltaic device layers self-assemble with hierarchical features from ångströms to 100’s of nanometers. The feature size, shape, composition, orientation, and order all contribute to device efficiency and are simultaneously difficult to study due to poor contrast between carbon based materials. This study seeks to increase device efficiency and simplify morphology measurements by replacing the typical fullerene acceptor with endohedral fullerene Lu 3N@PC 80BEH. The metal atoms give excellent scattering contrast for electron beam and x-ray experiments. Additionally, Lu 3N@PC 80BEH has a lower electron affinity than standard fullerenes, which can raise the open circuit voltage of photovoltaicmore » devices. Electron microscopy techniques are used to produce a detailed account of morphology evolution in mixtures of Lu 3N@PC 80BEH with the record breaking donor polymer, PTB7 and coated using solvent mixtures. We demonstrate that common solvent additives like 1,8-diiodooctane or chloronapthalene do not improve the morphology of endohedral fullerene devices as expected. The poor device performance is attributed to the lack of mutual miscibility between this particular polymer:fullerene combination and to co-crystallization of Lu 3N@PC 80BEH with 1,8-diiodooctane. This negative result explains why solvent additives mixtures are not necessarily a morphology cure-all.« less

3D Printing of Shape Memory Polymers for Flexible Electronic Devices.

PubMed

Zarek, Matt; Layani, Michael; Cooperstein, Ido; Sachyani, Ela; Cohn, Daniel; Magdassi, Shlomo

2016-06-01

The formation of 3D objects composed of shape memory polymers for flexible electronics is described. Layer-by-layer photopolymerization of methacrylated semicrystalline molten macromonomers by a 3D digital light processing printer enables rapid fabrication of complex objects and imparts shape memory functionality for electrical circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

25th anniversary article: The evolution of electronic skin (e-skin): a brief history, design considerations, and recent progress.

PubMed

Hammock, Mallory L; Chortos, Alex; Tee, Benjamin C-K; Tok, Jeffrey B-H; Bao, Zhenan

2013-11-13

Human skin is a remarkable organ. It consists of an integrated, stretchable network of sensors that relay information about tactile and thermal stimuli to the brain, allowing us to maneuver within our environment safely and effectively. Interest in large-area networks of electronic devices inspired by human skin is motivated by the promise of creating autonomous intelligent robots and biomimetic prosthetics, among other applications. The development of electronic networks comprised of flexible, stretchable, and robust devices that are compatible with large-area implementation and integrated with multiple functionalities is a testament to the progress in developing an electronic skin (e-skin) akin to human skin. E-skins are already capable of providing augmented performance over their organic counterpart, both in superior spatial resolution and thermal sensitivity. They could be further improved through the incorporation of additional functionalities (e.g., chemical and biological sensing) and desired properties (e.g., biodegradability and self-powering). Continued rapid progress in this area is promising for the development of a fully integrated e-skin in the near future. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron Acceptors Based on α-Substituted Perylene Diimide (PDI) for Organic Solar Cells

DOE PAGES

Zhao, Donglin; Wu, Qinghe; Cai, Zhengxu; ...

2016-02-20

The ortho-position functionalized perylene diimide derivatives (αPPID, αPBDT) were synthesized and used as the electron acceptors in nonfullerene organic photovoltaics. Due to the good planarity of ortho-position functionalized PDI, the αPPID and αPBDT show strong tendency to form aggregate because of their enhanced intermolecular pie-pie interaction. Moreover, they maintain the pure domains and the same packing order as in the pure film if they are blended with PBT7-TH and the SCLC measurement also shows the high electron mobility. The inverted OPVs employing αPDI-based compounds as acceptor and PBT7-TH as the donor give the highest PCE of 4.92 % for αPBDTmore » based device and 3.61 % for αPPID based device, which is 39 % and 4 % higher than that for their counterpart βPBDT and βPPID. The charge separation study shows the more efficient exciton dissociation at interfaces between PDI based compounds and PBT7-TH. In conclusion, the results suggest that compared to beta-substituted ones, alpha-substituted PDI derivatives are more promising electron acceptors for OPV.« less

Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang Haiyan; Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001; Cai Wei

2010-06-20

In this paper, we conduct a study of quantum transport models for a two-dimensional nano-size double gate (DG) MOSFET using two approaches: non-equilibrium Green's function (NEGF) and Wigner distribution. Both methods are implemented in the framework of the mode space methodology where the electron confinements below the gates are pre-calculated to produce subbands along the vertical direction of the device while the transport along the horizontal channel direction is described by either approach. Each approach handles the open quantum system along the transport direction in a different manner. The NEGF treats the open boundaries with boundary self-energy defined by amore » Dirichlet to Neumann mapping, which ensures non-reflection at the device boundaries for electron waves leaving the quantum device active region. On the other hand, the Wigner equation method imposes an inflow boundary treatment for the Wigner distribution, which in contrast ensures non-reflection at the boundaries for free electron waves entering the device active region. In both cases the space-charge effect is accounted for by a self-consistent coupling with a Poisson equation. Our goals are to study how the device boundaries are treated in both transport models affects the current calculations, and to investigate the performance of both approaches in modeling the DG-MOSFET. Numerical results show mostly consistent quantum transport characteristics of the DG-MOSFET using both methods, though with higher transport current for the Wigner equation method, and also provide the current-voltage (I-V) curve dependence on various physical parameters such as the gate voltage and the oxide thickness.« less

N-Doped Hybrid Graphene and Boron Nitride Armchair Nanoribbons As Nonmagnetic Semiconductors with Widely Tunable Electronic Properties

NASA Astrophysics Data System (ADS)

Habibpour, Razieh; Kashi, Eslam; Vazirib, Raheleh

2018-03-01

The electronic and chemical properties of N-doped hybrid graphene and boron nitride armchair nanoribbons (N-doped a-GBNNRs) in comparison with graphene armchair nanoribbon (pristine a-GNR) and hybrid graphene and boron nitride armchair nanoribbon (C-3BN) are investigated using the density functional theory method. The results show that all the mentioned nanoribbons are nonmagnetic direct semiconductors and all the graphitic N-doped a-GBNNRs are n-type semiconductors while the rest are p-type semiconductors. The N-doped graphitic 2 and N-doped graphitic 3 structures have the lowest work function and the highest number of valence electrons (Lowdin charges) which confirms that they are effective for use in electronic device applications.

Quasiparticle Energies and Band Gaps in Graphene Nanoribbons

NASA Astrophysics Data System (ADS)

Yang, Li; Park, Cheol-Hwan; Son, Young-Woo; Cohen, Marvin L.; Louie, Steven G.

2007-11-01

We present calculations of the quasiparticle energies and band gaps of graphene nanoribbons (GNRs) carried out using a first-principles many-electron Green’s function approach within the GW approximation. Because of the quasi-one-dimensional nature of a GNR, electron-electron interaction effects due to the enhanced screened Coulomb interaction and confinement geometry greatly influence the quasiparticle band gap. Compared with previous tight-binding and density functional theory studies, our calculated quasiparticle band gaps show significant self-energy corrections for both armchair and zigzag GNRs, in the range of 0.5 3.0 eV for ribbons of width 2.4 0.4 nm. The quasiparticle band gaps found here suggest that use of GNRs for electronic device components in ambient conditions may be viable.

Mechanisms of transport and electron transfer at conductive polymer/liquid interfaces

NASA Astrophysics Data System (ADS)

Ratcliff, Erin

Organic semiconductors (OSCs) have incredible prospects for next-generation, flexible electronic devices including bioelectronics, thermoelectrics, opto-electronics, and energy storage and conversion devices. Yet many fundamental challenges still exist. First, solution processing prohibits definitive control over microstructure, which is fundamental for controlling electrical, ionic, and thermal transport properties. Second, OSCs generally suffer from poor electrical conductivities due to a combination of low carriers and low mobility. Third, polymeric semiconductors have potential-dependent, dynamically evolving electronic and chemical states, leading to complex interfacial charge transfer properties in contact with liquids. This talk will focus on the use of alternative synthetic strategies of oxidative chemical vapor deposition and electrochemical deposition to control physical, electronic, and chemical structure. We couple our synthetic efforts with energy-, time-, and spatially resolved spectroelectrochemical and microscopy techniques to understand the critical interfacial chemistry-microstructure-property relationships: first at the macroscale, and then moving towards the nanoscale. In particular, approaches to better understand electron transfer events at polymer/liquid interfaces as a function of: 1.) chemical composition; 2.) electronic density of states (DOS); and 3.) crystallinity and microstructure will be discussed.

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Chang Bum

2014-08-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔVT) is presented by providing a ΔVT model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ˜1.8 and ˜2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time.

78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-19

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... certain electronic devices, including wireless communication devices, portable music and data processing...

Controllable Spatial Configuration on Cathode Interface for Enhanced Photovoltaic Performance and Device Stability.

PubMed

Li, Jiangsheng; Duan, Chenghao; Wang, Ning; Zhao, Chengjie; Han, Wei; Jiang, Li; Wang, Jizheng; Zhao, Yingjie; Huang, Changshui; Jiu, Tonggang

2018-05-08

The molecular structure of cathode interface modification materials can affect the surface morphology of the active layer and key electron transfer processes occurring at the interface of polymer solar cells in inverted structures mostly due to the change of molecular configuration. To investigate the effects of spatial configuration of the cathode interfacial modification layer on polymer solar cells device performances, we introduced two novel organic ionic salts (linear NS2 and three-dimensional (3D) NS4) combined with the ZnO film to fabricate highly efficient inverted solar cells. Both organic ionic salts successfully decreased the surface traps of the ZnO film and made its work function more compatible. Especially NS4 in three-dimensional configuration increased the electron mobility and extraction efficiency of the interfacial film, leading to a significant improvement of device performance. Power conversion efficiency (PCE) of 10.09% based on NS4 was achieved. Moreover, 3D interfacial modification could retain about 92% of its initial PCE over 160 days. It is proposed that 3D interfacial modification retards the element penetration-induced degradation without impeding the electron transfer from the active layer to the ZnO film, which significantly improves device stability. This indicates that inserting three-dimensional organic ionic salt is an efficient strategy to enhance device performance.

MO detector (MOD): a dual-function optical modulator-detector for on-chip communication

NASA Astrophysics Data System (ADS)

Sun, Shuai; Zhang, Ruoyu; Peng, Jiaxin; Narayana, Vikram K.; Dalir, Hamed; El-Ghazawi, Tarek; Sorger, Volker J.

2018-04-01

Physical challenges at the device and interconnect level limit both network and computing energy efficiency. While photonics is being considered to address interconnect bottlenecks, optical routing is still limited by electronic circuitry, requiring substantial overhead for optical-electrical-optical conversion. Here we show a novel design of an integrated broadband photonic-plasmonic hybrid device termed MODetector featuring dual light modulation and detection function to act as an optical transceiver in the photonic network-on-chip. With over 10 dB extinction ratio and 0.8 dB insertion loss at the modulation state, this MODetector provides 0.7 W/A responsivity in the detection state with 36 ps response time. This multi-functional device: (i) eliminates OEO conversion, (ii) reduces optical losses from photodetectors when not needed, and (iii) enables cognitive routing strategies for network-on-chips.

Buckled two-dimensional Xene sheets.

PubMed

Molle, Alessandro; Goldberger, Joshua; Houssa, Michel; Xu, Yong; Zhang, Shou-Cheng; Akinwande, Deji

2017-02-01

Silicene, germanene and stanene are part of a monoelemental class of two-dimensional (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-functionalized derivatives referred to as Xanes, are comprised of group IVA atoms arranged in a honeycomb lattice - similar to graphene but with varying degrees of buckling. Their electronic structure ranges from trivial insulators, to semiconductors with tunable gaps, to semi-metallic, depending on the substrate, chemical functionalization and strain. More than a dozen different topological insulator states are predicted to emerge, including the quantum spin Hall state at room temperature, which, if realized, would enable new classes of nanoelectronic and spintronic devices, such as the topological field-effect transistor. The electronic structure can be tuned, for example, by changing the group IVA element, the degree of spin-orbit coupling, the functionalization chemistry or the substrate, making the 2D-Xene systems promising multifunctional 2D materials for nanotechnology. This Perspective highlights the current state of the art and future opportunities in the manipulation and stability of these materials, their functions and applications, and novel device concepts.

Review Of E-Beam Electrical Test Techniques

NASA Astrophysics Data System (ADS)

Hohn, Fritz J.

1987-09-01

Electron beams as a viable technique for contactless testing of electrical functions and electrical integrity of different active devices in VLSI-chips has been demonstrated over the past years. This method of testing electronic networks, most widely used in the laboratory environment, is based on an electron probe which is deflected from point to point in the network. A current of secondary electrons emitted in response to the impingement of the electron probe is converted to a signal indicating the presence of a voltage or varying potential at the different points. Voltage contrast, electron beam induced current, dual potential approach, stroboscopic techniques and other methods have been developed and are used to detect different functional failures in devices. Besides the VLSI application, the contactless testing of three dimensional conductor networks of a 10cm x 10cm x .8cm multilayer ceramic module poses a different and new application for the electron beam test technique. A dual potential electron beam test system allows to generate electron beam induced voltage contrast. The same system at a different potential is used to detect this voltage contrast over the large area without moving the substrate and thus test for the electrical integrity of the networks. Less attention in most of the applications has been paid to the electron optical environment, mostly SEM's were upgraded or converted to do the job of a "voltage contrast" machine. This by no means will satisfy all requirements and more thoughts have to be given to aspects such as: low voltage electron guns: thermal emitter, Schottky emitter, field emitter, low voltage electron optics, two lens systems, different means of detection, signal processing - storage and others. This paper will review available E-beam test techniques, specific applications and some critical components.

PleurAlert: an augmented chest drainage system with electronic sensing, automated alerts and internet connectivity.

PubMed

Leeson, Cory E; Weaver, Robert A; Bissell, Taylor; Hoyer, Rachel; McClain, Corinne; Nelson, Douglas A; Samosky, Joseph T

2012-01-01

We have enhanced a common medical device, the chest tube drainage container, with electronic sensing of fluid volume, automated detection of critical alarm conditions and the ability to automatically send alert text messages to a nurse's cell phone. The PleurAlert system provides a simple touch-screen interface and can graphically display chest tube output over time. Our design augments a device whose basic function dates back 50 years by adding technology to automate and optimize a monitoring process that can be time consuming and inconvenient for nurses. The system may also enhance detection of emergency conditions and speed response time.

Going ballistic: Graphene hot electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

2015-12-01

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

PubMed

Zimmler, Mariano A; Stichtenoth, Daniel; Ronning, Carsten; Yi, Wei; Narayanamurti, Venkatesh; Voss, Tobias; Capasso, Federico

2008-06-01

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

Consumer Sleep Technologies: A Review of the Landscape.

PubMed

Ko, Ping-Ru T; Kientz, Julie A; Choe, Eun Kyoung; Kay, Matthew; Landis, Carol A; Watson, Nathaniel F

2015-12-15

To review sleep related consumer technologies, including mobile electronic device "apps," wearable devices, and other technologies. Validation and methodological transparency, the effect on clinical sleep medicine, and various social, legal, and ethical issues are discussed. We reviewed publications from the digital libraries of the Association for Computing Machinery, Institute of Electrical and Electronics Engineers, and PubMed; publications from consumer technology websites; and mobile device app marketplaces. Search terms included "sleep technology," "sleep app," and "sleep monitoring." Consumer sleep technologies are categorized by delivery platform including mobile device apps (integrated with a mobile operating system and utilizing mobile device functions such as the camera or microphone), wearable devices (on the body or attached to clothing), embedded devices (integrated into furniture or other fixtures in the native sleep environment), accessory appliances, and conventional desktop/website resources. Their primary goals include facilitation of sleep induction or wakening, self-guided sleep assessment, entertainment, social connection, information sharing, and sleep education. Consumer sleep technologies are changing the landscape of sleep health and clinical sleep medicine. These technologies have the potential to both improve and impair collective and individual sleep health depending on method of implementation. © 2015 American Academy of Sleep Medicine.

A 2D Material based Gate Tunable Memristive Device for Emulating Modulatory Input-dependent Hetero-synaptic Plasticity.

NASA Astrophysics Data System (ADS)

Yan, Xiaodong; Tian, He; Xie, Yujun; Kostelec, Andrew; Zhao, Huan; Cha, Judy J.; Tice, Jesse; Wang, Han

Modulatory input-dependent plasticity is a well-known type of hetero-synaptic response where the release of neuromodulators can alter the efficacy of neurotransmission in a nearby chemical synapse. Solid-state devices that can mimic such phenomenon are desirable for enhancing the functionality and reconfigurability of neuromorphic electronics. In this work, we demonstrated a tunable artificial synaptic device concept based on the properties of graphene and tin oxide that can mimic the modulatory input-dependent plasticity. By using graphene as the contact electrode, a third electrode terminal can be used to modulate the conductive filament formation in the vertical tin oxide based resistive memory device. The resulting synaptic characteristics of this device, in terms of the profile of synaptic weight change and the spike-timing-dependent-plasticity, is tunable with the bias at the modulating terminal. Furthermore, the synaptic response can be reconfigured between excitatory and inhibitory modes by this modulating bias. The operation mechanism of the device is studied with combined experimental and theoretical analysis. The device is attractive for application in neuromorphic electronics. This work is supported by ARO and NG-ION2 at USC.

Instant tough bonding of hydrogels for soft machines and electronics

PubMed Central

Wirthl, Daniela; Pichler, Robert; Drack, Michael; Kettlguber, Gerald; Moser, Richard; Gerstmayr, Robert; Hartmann, Florian; Bradt, Elke; Kaltseis, Rainer; Siket, Christian M.; Schausberger, Stefan E.; Hild, Sabine; Bauer, Siegfried; Kaltenbrunner, Martin

2017-01-01

Introducing methods for instant tough bonding between hydrogels and antagonistic materials—from soft to hard—allows us to demonstrate elastic yet tough biomimetic devices and machines with a high level of complexity. Tough hydrogels strongly attach, within seconds, to plastics, elastomers, leather, bone, and metals, reaching unprecedented interfacial toughness exceeding 2000 J/m2. Healing of severed ionic hydrogel conductors becomes feasible and restores function instantly. Soft, transparent multilayered hybrids of elastomers and ionic hydrogels endure biaxial strain with more than 2000% increase in area, facilitating soft transducers, generators, and adaptive lenses. We demonstrate soft electronic devices, from stretchable batteries, self-powered compliant circuits, and autonomous electronic skin for triggered drug delivery. Our approach is applicable in rapid prototyping and in delicate environments inaccessible for extended curing and cross-linking. PMID:28691092

Effects of interfacial stability between electron transporting layer and cathode on the degradation process of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Ta-Ya; Lee, Yong-Han; Song, Ok-Keun

2007-11-01

The authors have demonstrated that the increase of electron injection barrier height between tris(8-hydroxyquinoline)aluminum (Alq3) and LiF /Al cathode is one of the most critical parameters to determine the reliability of organic light-emitting diode with the typical structure of indium tin oxide/N ,N'-bis(naphthalen-1-yl)-N ,N'-bis(phenyl) benzidine/Alq3/LiF /Al. The electrical properties of several devices (hole only, electron only, and integrated double-layered devices) have been measured in the function of operating time to analyze the bulk and interface property changes. Bulk properties of trap energy and mobility in an organic layer have been estimated by using trap-charge-limited currents and transient electroluminescence measurements.

Instant tough bonding of hydrogels for soft machines and electronics.

PubMed

Wirthl, Daniela; Pichler, Robert; Drack, Michael; Kettlguber, Gerald; Moser, Richard; Gerstmayr, Robert; Hartmann, Florian; Bradt, Elke; Kaltseis, Rainer; Siket, Christian M; Schausberger, Stefan E; Hild, Sabine; Bauer, Siegfried; Kaltenbrunner, Martin

2017-06-01

Introducing methods for instant tough bonding between hydrogels and antagonistic materials-from soft to hard-allows us to demonstrate elastic yet tough biomimetic devices and machines with a high level of complexity. Tough hydrogels strongly attach, within seconds, to plastics, elastomers, leather, bone, and metals, reaching unprecedented interfacial toughness exceeding 2000 J/m 2 . Healing of severed ionic hydrogel conductors becomes feasible and restores function instantly. Soft, transparent multilayered hybrids of elastomers and ionic hydrogels endure biaxial strain with more than 2000% increase in area, facilitating soft transducers, generators, and adaptive lenses. We demonstrate soft electronic devices, from stretchable batteries, self-powered compliant circuits, and autonomous electronic skin for triggered drug delivery. Our approach is applicable in rapid prototyping and in delicate environments inaccessible for extended curing and cross-linking.

Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

PubMed

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more areas, even daily pervasive electronics.

Directly Writing Resistor, Inductor and Capacitor to Composite Functional Circuits: A Super-Simple Way for Alternative Electronics

PubMed Central

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

Background The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Methods Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Results Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. Conclusions The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more areas, even daily pervasive electronics. PMID:23936349

Design of nanostructured-based glucose biosensors

NASA Astrophysics Data System (ADS)

Komirisetty, Archana; Williams, Frances; Pradhan, Aswini; Konda, Rajini B.; Dondapati, Hareesh; Samantaray, Diptirani

2012-04-01

This paper presents the design of glucose sensors that will be integrated with advanced nano-materials, bio-coatings and electronics to create novel devices that are highly sensitive, inexpensive, accurate, and reliable. In the work presented, a glucose biosensor and its fabrication process flow have been designed. The device is based on electrochemical sensing using a working electrode with bio-functionalized zinc oxide (ZnO) nano-rods. Among all metal oxide nanostructures, ZnO nano-materials play a significant role as a sensing element in biosensors due to their properties such as high isoelectric point (IEP), fast electron transfer, non-toxicity, biocompatibility, and chemical stability which are very crucial parameters to achieve high sensitivity. Amperometric enzyme electrodes based on glucose oxidase (GOx) are used due to their stability and high selectivity to glucose. The device also consists of silicon dioxide and titanium layers as well as platinum working and counter electrodes and a silver/silver chloride reference electrode. Currently, the biosensors are being fabricated using the process flow developed. Once completed, the sensors will be bio-functionalized and tested to characterize their performance, including their sensitivity and stability.

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

NASA Astrophysics Data System (ADS)

Pala, M. G.; Esseni, D.

2018-03-01

This paper presents the theory, implementation, and application of a quantum transport modeling approach based on the nonequilibrium Green's function formalism and a full-band empirical pseudopotential Hamiltonian. We here propose to employ a hybrid real-space/plane-wave basis that results in a significant reduction of the computational complexity compared to a full plane-wave basis. To this purpose, we provide a theoretical formulation in the hybrid basis of the quantum confinement, the self-energies of the leads, and the coupling between the device and the leads. After discussing the theory and the implementation of the new simulation methodology, we report results for complete, self-consistent simulations of different electron devices, including a silicon Esaki diode, a thin-body silicon field effect transistor (FET), and a germanium tunnel FET. The simulated transistors have technologically relevant geometrical features with a semiconductor film thickness of about 4 nm and a channel length ranging from 10 to 17 nm. We believe that the newly proposed formalism may find applications also in transport models based on ab initio Hamiltonians, as those employed in density functional theory methods.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Conway, A. M.; Voss, L. F.

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

PubMed

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Constructing the informatics and information technology foundations of a medical device evaluation system: a report from the FDA unique device identifier demonstration.

PubMed

Drozda, Joseph P; Roach, James; Forsyth, Thomas; Helmering, Paul; Dummitt, Benjamin; Tcheng, James E

2018-02-01

The US Food and Drug Administration (FDA) has recognized the need to improve the tracking of medical device safety and performance, with implementation of Unique Device Identifiers (UDIs) in electronic health information as a key strategy. The FDA funded a demonstration by Mercy Health wherein prototype UDIs were incorporated into its electronic information systems. This report describes the demonstration's informatics architecture. Prototype UDIs for coronary stents were created and implemented across a series of information systems, resulting in UDI-associated data flow from manufacture through point of use to long-term follow-up, with barcode scanning linking clinical data with UDI-associated device attributes. A reference database containing device attributes and the UDI Research and Surveillance Database (UDIR) containing the linked clinical and device information were created, enabling longitudinal assessment of device performance. The demonstration included many stakeholders: multiple Mercy departments, manufacturers, health system partners, the FDA, professional societies, the National Cardiovascular Data Registry, and information system vendors. The resulting system of systems is described in detail, including entities, functions, linkage between the UDIR and proprietary systems using UDIs as the index key, data flow, roles and responsibilities of actors, and the UDIR data model. The demonstration provided proof of concept that UDIs can be incorporated into provider and enterprise electronic information systems and used as the index key to combine device and clinical data in a database useful for device evaluation. Keys to success and challenges to achieving this goal were identified. Fundamental informatics principles were central to accomplishing the system of systems model. © The Author 2017. Published by Oxford University Press on behalf of the American Medical Informatics Association. All rights reserved. For Permissions, please email: journals.permissions@oup.com

Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

PubMed Central

Zhou, Yangbo; Fox, Daniel S; Maguire, Pierce; O’Connell, Robert; Masters, Robert; Rodenburg, Cornelia; Wu, Hanchun; Dapor, Maurizio; Chen, Ying; Zhang, Hongzhou

2016-01-01

Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene. This technique uses the secondary electron contrast and has nanometre-resolved layer information. The measurement of few-layer graphene flakes shows the variation of work function between graphene layers with a precision of less than 10 meV. It is expected that this technique will prove extremely useful for researchers in a broad range of fields due to its revolutionary throughput and accuracy. PMID:26878907

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical transport properties since such systems are halfmetallic in nature and promise the possibilities of spin injection and detection. The study was extended to dilute magnetic semiconducting nanowire system of Cd1-xMnxTe which possess both magnetic and semiconducting properties. In summary, the studies made in this thesis will offer a new understanding of spin transport behavior for future technology.

Industrial perspectives on earth abundant, multinary thin film photovoltaics

NASA Astrophysics Data System (ADS)

Haight, Richard; Gershon, Talia; Gunawan, Oki; Antunez, Priscilla; Bishop, Douglas; Seog Lee, Yun; Gokmen, Tayfun; Sardashti, Kasra; Chagarov, Evgueni; Kummel, Andrew

2017-03-01

The most efficient earth abundant, non-toxic thin film multelemental PV devices are fabricated from Cu, Zn, Sn, S and Se, with the chemical formula of Cu2ZnSn(S x Se1-x )4 (CZTS,Se). This material has enjoyed relatively rapid increases in efficiency from its inception to its present-day power conversion efficiency of 12.6%. But further increases in efficiency have been hampered by the inability to substantially increase Voc, the open circuit voltage. In this review article we will discuss the fundamentals of this important kesterite material including methods of film growth, post growth processing and device fabrication. Detailed studies of the properties of CZTS,Se including chemical, structural and electronic as well as full device electrical characterization have been performed in an effort to coax out the critical issues that limit performance. These experimental studies, enhanced by density functional theory calculations have pointed to fundamental bulk point defects, such as Cu-Zn antisites, and clusters of defects, as the primary culprits in limiting Voc increases. Improvements in device performance through grain boundary passivation and interface modifications are described. Exfoliation of functioning solar cells to expose the back surface along with engineering of new back contacts designed to impose electrostatic fields that drive electron-hole separation and increase Voc are discussed. A parallel route to increasing device performance by alloying Ag with CZTS,Se in order to inhibit Cu-Zn antisite defect formation has shown significant improvement in material properties. Finally, applications of high S (and hence higher Voc) CZTS,Se based devices to energy harvesting for ‘Internet-of-Things’ devices is discussed.

Electronic medical devices: a primer for pathologists.

PubMed

Weitzman, James B

2003-07-01

Electronic medical devices (EMDs) with downloadable memories, such as implantable cardiac pacemakers, defibrillators, drug pumps, insulin pumps, and glucose monitors, are now an integral part of routine medical practice in the United States, and functional organ replacements, such as the artificial heart, pancreas, and retina, will most likely become commonplace in the near future. Often, EMDs end up in the hands of the pathologist as a surgical specimen or at autopsy. No established guidelines for systematic examination and reporting or comprehensive reviews of EMDs currently exist for the pathologist. To provide pathologists with a general overview of EMDs, including a brief history; epidemiology; essential technical aspects, indications, contraindications, and complications of selected devices; potential applications in pathology; relevant government regulations; and suggested examination and reporting guidelines. Articles indexed on PubMed of the National Library of Medicine, various medical and history of medicine textbooks, US Food and Drug Administration publications and product information, and specifications provided by device manufacturers. Studies were selected on the basis of relevance to the study objectives. Descriptive data were selected by the author. Suggested examination and reporting guidelines for EMDs received as surgical specimens and retrieved at autopsy. Electronic medical devices received as surgical specimens and retrieved at autopsy are increasing in number and level of sophistication. They should be systematically examined and reported, should have electronic memories downloaded when indicated, will help pathologists answer more questions with greater certainty, and should become an integral part of the formal knowledge base, research focus, training, and practice of pathology.

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

Electronic energy loss spectra from mono-layer to few layers of phosphorene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K.

2016-05-23

Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

Methods for synchronizing a countdown routine of a timer key and electronic device

DOEpatents

Condit, Reston A.; Daniels, Michael A.; Clemens, Gregory P.; Tomberlin, Eric S.; Johnson, Joel A.

2015-06-02

A timer key relating to monitoring a countdown time of a countdown routine of an electronic device is disclosed. The timer key comprises a processor configured to respond to a countdown time associated with operation of the electronic device, a display operably coupled with the processor, and a housing configured to house at least the processor. The housing has an associated structure configured to engage with the electronic device to share the countdown time between the electronic device and the timer key. The processor is configured to begin a countdown routine based at least in part on the countdown time, wherein the countdown routine is at least substantially synchronized with a countdown routine of the electronic device when the timer key is removed from the electronic device. A system and method for synchronizing countdown routines of a timer key and an electronic device are also disclosed.

Calibration of high-dynamic-range, finite-resolution x-ray pulse-height spectrometers for extracting electron energy distribution data from the PFRC-2 device

NASA Astrophysics Data System (ADS)

Swanson, C.; Jandovitz, P.; Cohen, S. A.

2017-10-01

Knowledge of the full x-ray energy distribution function (XEDF) emitted from a plasma over a large dynamic range of energies can yield valuable insights about the electron energy distribution function (EEDF) of that plasma and the dynamic processes that create them. X-ray pulse height detectors such as Amptek's X-123 Fast SDD with Silicon Nitride window can detect x-rays in the range of 200eV to 100s of keV. However, extracting EEDF from this measurement requires precise knowledge of the detector's response function. This response function, including the energy scale calibration, the window transmission function, and the resolution function, can be measured directly. We describe measurements of this function from x-rays from a mono-energetic electron beam in a purpose-built gas-target x-ray tube. Large-Z effects such as line radiation, nuclear charge screening, and polarizational Bremsstrahlung are discussed.

Design and Implementation of Foot-Mounted Inertial Sensor Based Wearable Electronic Device for Game Play Application.

PubMed

Zhou, Qifan; Zhang, Hai; Lari, Zahra; Liu, Zhenbo; El-Sheimy, Naser

2016-10-21

Wearable electronic devices have experienced increasing development with the advances in the semiconductor industry and have received more attention during the last decades. This paper presents the development and implementation of a novel inertial sensor-based foot-mounted wearable electronic device for a brand new application: game playing. The main objective of the introduced system is to monitor and identify the human foot stepping direction in real time, and coordinate these motions to control the player operation in games. This proposed system extends the utilized field of currently available wearable devices and introduces a convenient and portable medium to perform exercise in a more compelling way in the near future. This paper provides an overview of the previously-developed system platforms, introduces the main idea behind this novel application, and describes the implemented human foot moving direction identification algorithm. Practical experiment results demonstrate that the proposed system is capable of recognizing five foot motions, jump, step left, step right, step forward, and step backward, and has achieved an over 97% accuracy performance for different users. The functionality of the system for real-time application has also been verified through the practical experiments.

Design and Implementation of Foot-Mounted Inertial Sensor Based Wearable Electronic Device for Game Play Application

PubMed Central

Zhou, Qifan; Zhang, Hai; Lari, Zahra; Liu, Zhenbo; El-Sheimy, Naser

2016-01-01

Wearable electronic devices have experienced increasing development with the advances in the semiconductor industry and have received more attention during the last decades. This paper presents the development and implementation of a novel inertial sensor-based foot-mounted wearable electronic device for a brand new application: game playing. The main objective of the introduced system is to monitor and identify the human foot stepping direction in real time, and coordinate these motions to control the player operation in games. This proposed system extends the utilized field of currently available wearable devices and introduces a convenient and portable medium to perform exercise in a more compelling way in the near future. This paper provides an overview of the previously-developed system platforms, introduces the main idea behind this novel application, and describes the implemented human foot moving direction identification algorithm. Practical experiment results demonstrate that the proposed system is capable of recognizing five foot motions, jump, step left, step right, step forward, and step backward, and has achieved an over 97% accuracy performance for different users. The functionality of the system for real-time application has also been verified through the practical experiments. PMID:27775673

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Simon, P.; Sontheimer, T.; Leendertz, C.; Gorka, B.; Schnegg, A.; Rech, B.; Lips, K.

2012-09-01

Employing quantitative electron-paramagnetic resonance analysis and numerical simulations, we investigate the performance of thin-film polycrystalline silicon solar cells as a function of defect density. We find that the open-circuit voltage is correlated to the density of defects, which we assign to coordination defects at grain boundaries and in dislocation cores. Numerical device simulations confirm the observed correlation and indicate that the device performance is limited by deep defects in the absorber bulk. Analyzing the defect density as a function of grain size indicates a high concentration of intra-grain defects. For large grains (>2 μm), we find that intra-grain defects dominate over grain boundary defects and limit the solar cell performance.

Molecular switches and motors on surfaces.

PubMed

Pathem, Bala Krishna; Claridge, Shelley A; Zheng, Yue Bing; Weiss, Paul S

2013-01-01

Molecular switches and motors respond structurally, electronically, optically, and/or mechanically to external stimuli, testing and potentially enabling extreme miniaturization of optoelectronic devices, nanoelectromechanical systems, and medical devices. The assembly of motors and switches on surfaces makes it possible both to measure the properties of individual molecules as they relate to their environment and to couple function between assembled molecules. In this review, we discuss recent progress in assembling molecular switches and motors on surfaces, measuring static and dynamic structures, understanding switching mechanisms, and constructing functional molecular materials and devices. As demonstrative examples, we choose a representative molecule from three commonly studied classes including molecular switches, photochromic molecules, and mechanically interlocked molecules. We conclude by offering perspectives on the future of molecular switches and motors on surfaces.

Electronic tracking system and wandering in Alzheimer's disease: a case study.

PubMed

Faucounau, V; Riguet, M; Orvoen, G; Lacombe, A; Rialle, V; Extra, J; Rigaud, A-S

2009-01-01

Wandering is a behavioural disorder, which occurs in Alzheimer's disease or other dementia. People who wander are at risk of physical harm and untimely death. Moreover, wandering behaviour causes a lot of stress to the caregivers. In the last few years, different geolocation devices have been developed in order to minimise risk and manage unsafe wandering. These detection systems rarely meet patients and caregivers' needs because they are not involved in the devices building process. The aim is to explore the needs and perceptions of wandering persons and their caregivers towards existing tracking devices as well as their acceptability and usability. This paper reports a dyad case. The tracking system tested is presented as a mobile Global Positioning System (GPS) receiver-shaped, including function of telephony and data transfer via GSM/GPRS. Dyad patient/caregiver expressed their needs and perceptions towards tracking devices and gave their impressions about the functioning of the tested device at the end of the test. The patient focused on the device's shape which he found too voluminous and unaesthetic, and was unable to give an opinion about the device's functioning. The spouse highlighted malfunctions and usage difficulties, which made the device not appropriate to her needs. Involving end-users in the co-design of new technologies is necessary for building tailored devices. Moreover, in this area of dementia care, the person-centred approach is essential to a tailored wandering management.

Integration of active devices on smart polymers for neural interfaces

NASA Astrophysics Data System (ADS)

Avendano-Bolivar, Adrian Emmanuel

The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of reliability of widely used Parylene-c encapsulation for in vivo conditions for thin film transistors is presented. These various inquiries, taken in their entirety, facilitate understanding of fundamental problems for biocompatible, chronic electronic device implants in the body, leading to a new set of tools and devices that will help understand complex problems in neuroscience and materials research.

Design, processing and testing of LSI arrays hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Salmassy, S.

1978-01-01

Those factors affecting the cost of electronic subsystems utilizing LSI microcircuits were determined and the most efficient methods for low cost packaging of LSI devices as a function of density and reliability were developed.

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

Characterization of the Electron Energy Distribution Function in a Penning Discharge

NASA Astrophysics Data System (ADS)

Skoutnev, Valentin; Dourbal, Paul; Raitses, Yevgeny

2017-10-01

Slow and fast sweeping Langmuir probe diagnostics were implemented to measure the electron energy distribution function (EEDF) in a cross-field Penning discharge undergoing rotating spoke phenomenon. The EEDF was measured using the Druyvesteyn method. Rotating spoke occurs in a variety of ExB devices and is characterized primarily by azimuthal light, density, and potential fluctuations on the order of a few kHz, but is theoretically still not well understood. Characterization of a time-resolved EEDF of the spoke would be important for understanding physical mechanisms responsible for the spoke and its effects on Penning discharges, Hall thrusters, sputtering magnetrons, and other ExB devices. In this work, preliminary results of measurements of the EEDF using slow and fast Langmuir probes that sweep below and above the fundamental spoke frequency will be discussed. This work was supported by the Air Force Office of Scientific Research (AFOSR).

Protein self-assembly onto nanodots leads to formation of conductive bio-based hybrids

PubMed Central

Hu, Xiao; Dong, Chenbo; Su, Rigu; Xu, Quan; Dinu, Cerasela Zoica

2016-01-01

The next generation of nanowires that could advance the integration of functional nanosystems into synthetic applications from photocatalysis to optical devices need to demonstrate increased ability to promote electron transfer at their interfaces while ensuring optimum quantum confinement. Herein we used the biological recognition and the self-assembly properties of tubulin, a protein involved in building the filaments of cellular microtubules, to create stable, free standing and conductive sulfur-doped carbon nanodots-based conductive bio-hybrids. The physical and chemical properties (e.g., composition, morphology, diameter etc.) of such user-synthesized hybrids were investigated using atomic and spectroscopic techniques, while the electron transfer rate was estimated using peak currents formed during voltammetry scanning. Our results demonstrate the ability to create individually hybrid nanowires capable to reduce energy losses; such hybrids could possibly be used in the future for the advancement and implementation into nanometer-scale functional devices. PMID:27922059

MEMS in Space Systems

NASA Technical Reports Server (NTRS)

Lyke, J. C.; Michalicek, M. A.; Singaraju, B. K.

1995-01-01

Micro-electro-mechanical systems (MEMS) provide an emerging technology that has the potential for revolutionizing the way space systems are designed, assembled, and tested. The high launch costs of current space systems are a major determining factor in the amount of functionality that can be integrated in a typical space system. MEMS devices have the ability to increase the functionality of selected satellite subsystems while simultaneously decreasing spacecraft weight. The Air Force Phillips Laboratory (PL) is supporting the development of a variety of MEMS related technologies as one of several methods to reduce the weight of space systems and increase their performance. MEMS research is a natural extension of PL research objectives in micro-electronics and advanced packaging. Examples of applications that are under research include on-chip micro-coolers, micro-gyroscopes, vibration sensors, and three-dimensional packaging technologies to integrate electronics with MEMS devices. The first on-orbit space flight demonstration of these and other technologies is scheduled for next year.

Investigations of optical and thermoelectric response of direct band gap Ca3XO (X = Si, Ge) anti-perovskites stabilized in cubic and orthorhombic phases

NASA Astrophysics Data System (ADS)

Mahmood, Q.; Ashraf, A.; Hassan, M.

2018-02-01

We predict the phase dependent electronic properties for elaborating the optical and thermoelectric behaviors of both cubic (Pm-3m) and orthorhombic (Pbnm) Ca3XO (X = Si, Ge) antiperovskites using first-principles density functional theory (DFT) computations. The mBJ functional is employed for computing the most accurate electronic characteristics. A direct band gap semiconducting nature has been found appearing due to hybridization between O and Si/Ge p-states. The calculated band gaps lying in the infrared energy region suggest that the studied anti-perovskites can absorb visible and ultraviolet energy revealing potential optoelectronics device applications. Moreover, the important thermoelectric parameters are computed for illustrating the potential thermoelectric applications. Hence, the studied anti-perovskites can simultaneously exhibit various flexible material properties, which reveal their worth for the devices demonstrating versatile characteristics.

High-performance green semiconductor devices: materials, designs, and fabrication

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Zhang, Huilong; Gong, Shaoqin; Ma, Zhenqiang

2017-06-01

From large industrial computers to non-portable home appliances and finally to light-weight portable gadgets, the rapid evolution of electronics has facilitated our daily pursuits and increased our life comforts. However, these rapid advances have led to a significant decrease in the lifetime of consumer electronics. The serious environmental threat that comes from electronic waste not only involves materials like plastics and heavy metals, but also includes toxic materials like mercury, cadmium, arsenic, and lead, which can leak into the ground and contaminate the water we drink, the food we eat, and the animals that live around us. Furthermore, most electronics are comprised of non-renewable, non-biodegradable, and potentially toxic materials. Difficulties in recycling the increasing amount of electronic waste could eventually lead to permanent environmental pollution. As such, discarded electronics that can naturally degrade over time would reduce recycling challenges and minimize their threat to the environment. This review provides a snapshot of the current developments and challenges of green electronics at the semiconductor device level. It looks at the developments that have been made in an effort to help reduce the accumulation of electronic waste by utilizing unconventional, biodegradable materials as components. While many semiconductors are classified as non-biodegradable, a few biodegradable semiconducting materials exist and are used as electrical components. This review begins with a discussion of biodegradable materials for electronics, followed by designs and processes for the manufacturing of green electronics using different techniques and designs. In the later sections of the review, various examples of biodegradable electrical components, such as sensors, circuits, and batteries, that together can form a functional electronic device, are discussed and new applications using green electronics are reviewed.

All-spin logic operations: Memory device and reconfigurable computing

NASA Astrophysics Data System (ADS)

Patra, Moumita; Maiti, Santanu K.

2018-02-01

Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of both inputs and outputs are described by spin state only, circumventing spin-to-charge conversion at every stage as often used in conventional devices with the inclusion of extra hardware that can eventually diminish the efficiency. All possible logic functions can be engineered from a single device without redesigning the circuit which certainly offers the opportunities of designing new generation spintronic devices. Moreover, we also discuss the utilization of the present model as a memory device and suitable computing operations with proposed experimental setups.

Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

NASA Astrophysics Data System (ADS)

Yunfang, Jia; Cheng, Ju

2016-01-01

The graphene field effect transistor (GFET) has been widely studied and developed as sensors and functional devices. The first report about GFET sensing simulation on the device level is proposed. The GFET's characteristics, its responding for single strand DNA (ssDNA) and hybridization with the complimentary DNA (cDNA) are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ssDNA immobilization on GFET and hybridization with its cDNA are performed, the results are discussed based on the electron transfer (ET) mechanism between DNA and graphene. Project supported by the National Natural Science Foundation of China (No. 61371028) and the Tianjin Natural Science Foundation (No. 12JCZDJC22400).

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

PubMed Central

Pavunny, Shojan P.; Scott, James F.; Katiyar, Ram S.

2014-01-01

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article. PMID:28788589

Experimental and Theoretical Investigation of the Function of 4- tert-Butyl Pyridine for Interface Energy Level Adjustment in Efficient Solid-State Dye-Sensitized Solar Cells.

PubMed

Yang, Lei; Lindblad, Rebecka; Gabrielsson, Erik; Boschloo, Gerrit; Rensmo, Håkan; Sun, Licheng; Hagfeldt, Anders; Edvinsson, Tomas; Johansson, Erik M J

2018-04-11

4- tert-Butylpyridine ( t-BP) is commonly used in solid state dye-sensitized solar cells (ssDSSCs) to increase the photovoltaic performance. In this report, the mechanism how t-BP functions as a favorable additive is investigated comprehensively. ssDSSCs were prepared with different concentrations of t-BP, and a clear increase in efficiency was observed up to a maximum concentration and for higher concentrations the efficiency thereafter decreases. The energy level alignment in the complete devices was measured using hard X-ray photoelectron spectroscopy (HAXPES). The results show that the energy levels of titanium dioxide are shifted further away from the energy levels of spiro-OMeTAD as the t-BP concentration is increased. This explains the higher photovoltage obtained in the devices with higher t-BP concentration. In addition, the electron lifetime was measured for the devices and the electron lifetime was increased when adding t-BP, which can be explained by the recombination blocking effect at the surface of TiO 2 . The results from the HAXPES measurements agree with those obtained from density functional theory calculations and give an understanding of the mechanism for the improvement, which is an important step for the future development of solar cells including t-BP.

Tunable nano Peltier cooling device from geometric effects using a single graphene nanoribbon

NASA Astrophysics Data System (ADS)

Li, Wan-Ju; Yao, Dao-Xin; Carlson, E. W.

2014-08-01

Based on the phenomenon of curvature-induced doping in graphene we propose a class of Peltier cooling devices, produced by geometrical effects, without gating. We show how a graphene nanoribbon laid on an array of curved nano cylinders can be used to create a targeted and tunable cooling device. Using two different approaches, the Nonequilibrium Green's Function (NEGF) method and experimental inputs, we predict that the cooling power of such a device can approach the order of kW/cm2, on par with the best known techniques using standard superlattice structures. The structure proposed here helps pave the way toward designing graphene electronics which use geometry rather than gating to control devices.

Electronic properties of ZnPSe3-MoS2 Van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Sharma, Munish; Kumar, Ashok; Ahluwalia, P. K.

2018-04-01

We present a comparative study of electronic properties of ZnPSe3-MoS2 heterostructure using GGA-PBE functional and DFT-D2 method within the framework of density functional theory (DFT). Electronic band structure for the considered heterostructure shows a direct band gap semiconducting character. A decrease in band gap is observed with the heterostructuring as compared to their constituent pristine monolayers. The alignment of valance band maxima and conduction band minima on different layers in heterostructure indicate the physical separation of charge carriers. A work function of 5.31 eV has been calculated for ZnPSe3-MoS2 heterostructure. These results provide a physical basis for the potential applications of these ZnPSe3-MoS2 heterostructure in optoelectronic devices.

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

NASA Astrophysics Data System (ADS)

McMorrow, Julian

The electronic materials research driving Moore's law has provided several decades of increasingly powerful yet simultaneously miniaturized computer technologies. As we approach the physical and practical limits of what can be accomplished with silicon electronics, we look to new materials to drive innovation in future electronic applications. New materials paradigms require the development of understanding from first principles to the demonstration of applications that comes with mature technologies. Semiconducting single-walled carbon nanotubes (SWCNTs), single- and few-layer molybdenum disulfide (MoS2) and self-assembled nanodielectric (SAND) gate materials have all made significant impacts in the research field of unconventional electronic materials. The materials selection, interfaces between materials, processing steps to assemble them, and their interaction with their environment all have significant bearing on the operation of the overall device. Operating in harsh radiation environments, like those of satellites orbiting the Earth, present unique challenges to the functionality and reliability of electronic devices. Because the future of space-bound electronics is often informed by the technology of terrestrial devices, a proactive approach is adopted to identify and understand the radiation response of new materials systems as they emerge and develop. The work discussed here drives the innovation and development of multiple nanomaterial based electronic technologies while simultaneously exploring their relevant radiation response mechanisms. First, collaborative efforts result in the demonstration of a SWCNT-based circuit technology that is solution processed, large-area, and compatible with flexible substrates. The statistical characterization of SWCNT transistors enables the development of robust doping and encapsulation schemes, which make the SWCNT circuits stable, scalable, and low-power. These SWCNTs are then integrated into static random access memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates for SAND deposition, supporting the SAND superlattice structure and its superlative electronic properties on a metal surface. This result is critical for conducting fundamental transport studies when integrating SAND with novel semiconductor materials, as well as enabling complex circuit integration and SAND on flexible substrates. Altogether, these works drive the integration of novel nanoelectronic materials for future electronics while providing an understanding of their varying radiation response mechanisms to enable their adoption in future space-bound applications.

Towards nanometer-spaced silicon contacts to proteins

NASA Astrophysics Data System (ADS)

Schukfeh, Muhammed I.; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-01

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p+ silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices’ electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes’ edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions’ conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein’s denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Using field-particle correlations to study auroral electron acceleration in the LAPD

NASA Astrophysics Data System (ADS)

Schroeder, J. W. R.; Howes, G. G.; Skiff, F.; Kletzing, C. A.; Carter, T. A.; Vincena, S.; Dorfman, S.

2017-10-01

Resonant nonlinear Alfvén wave-particle interactions are believed to contribute to the acceleration of auroral electrons. Experiments in the Large Plasma Device (LAPD) at UCLA have been performed with the goal of providing the first direct measurement of this nonlinear process. Recent progress includes a measurement of linear fluctuations of the electron distribution function associated with the production of inertial Alfvén waves in the LAPD. These linear measurements have been analyzed using the field-particle correlation technique to study the nonlinear transfer of energy between the Alfvén wave electric fields and the electron distribution function. Results of this analysis indicate collisions alter the resonant signature of the field-particle correlation, and implications for resonant Alfvénic electron acceleration in the LAPD are considered. This work was supported by NSF, DOE, and NASA.

On-chip surface modified nanostructured ZnO as functional pH sensors

NASA Astrophysics Data System (ADS)

Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

2015-09-01

Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW-NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy-Chapman-Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range.

Multi-susceptibile Single-Phased Ceramics with Both Considerable Magnetic and Dielectric Properties by Selectively Doping

PubMed Central

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-01-01

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe3+, such as Ti4+, Nb5+ and Zr4+, into BaFe12O19. In terms of charge balance, Fe3+/Fe2+ pair dipoles are produced through the substitution of Fe3+ by high-valenced ions. The electron hopping between Fe3+ and Fe2+ ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices. PMID:25835175

Multi-susceptibile single-phased ceramics with both considerable magnetic and dielectric properties by selectively doping.

PubMed

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-04-02

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe(3+), such as Ti(4+), Nb(5+) and Zr(4+), into BaFe12O19. In terms of charge balance, Fe(3+)/Fe(2+) pair dipoles are produced through the substitution of Fe(3+) by high-valenced ions. The electron hopping between Fe(3+) and Fe(2+) ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices.

Multi-susceptibile Single-Phased Ceramics with Both Considerable Magnetic and Dielectric Properties by Selectively Doping

NASA Astrophysics Data System (ADS)

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-04-01

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe3+, such as Ti4+, Nb5+ and Zr4+, into BaFe12O19. In terms of charge balance, Fe3+/Fe2+ pair dipoles are produced through the substitution of Fe3+ by high-valenced ions. The electron hopping between Fe3+ and Fe2+ ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices.

All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron.

PubMed

Zhang, Deming; Zeng, Lang; Cao, Kaihua; Wang, Mengxing; Peng, Shouzhong; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Wang, Yu; Zhao, Weisheng

2016-08-01

Artificial synaptic devices implemented by emerging post-CMOS non-volatile memory technologies such as Resistive RAM (RRAM) have made great progress recently. However, it is still a big challenge to fabricate stable and controllable multilevel RRAM. Benefitting from the control of electron spin instead of electron charge, spintronic devices, e.g., magnetic tunnel junction (MTJ) as a binary device, have been explored for neuromorphic computing with low power dissipation. In this paper, a compound spintronic device consisting of multiple vertically stacked MTJs is proposed to jointly behave as a synaptic device, termed as compound spintronic synapse (CSS). Based on our theoretical and experimental work, it has been demonstrated that the proposed compound spintronic device can achieve designable and stable multiple resistance states by interfacial and materials engineering of its components. Additionally, a compound spintronic neuron (CSN) circuit based on the proposed compound spintronic device is presented, enabling a multi-step transfer function. Then, an All Spin Artificial Neural Network (ASANN) is constructed with the CSS and CSN circuit. By conducting system-level simulations on the MNIST database for handwritten digital recognition, the performance of such ASANN has been investigated. Moreover, the impact of the resolution of both the CSS and CSN and device variation on the system performance are discussed in this work.

Melanin: spin behaviour and implications for bioelectronic devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Meredith, Paul; Sheliakina, Margarita; Mostert, Bernard

2015-10-01

The melanins are a broad class of pigmentary macromolecules found through nature that perform a wide range of functions including photo-protection [1]. The most common melanin - the brown, black pigment eumelanin, has been much studied because of its role in melanoma and also for its functional material properties [2]. Synthetic eumelanin has been shown to be photoconductive in the solid state and also possess a water content dependent dark conductivity [3]. It is now well established that these electrical properties arise from hybrid ionic-electronic behaviour, leading to the proposition that melanins could be model biocompatible systems for ion-to-electron transduction in bioelectronics. In my talk, I will discuss the basic science behind these bioelectronics properties - electrical and optical. In this context I will also describe recent electron paramagnetic spin studies which isolate the role of the various chemical moieties responsible for the hybrid ionic-electronic behaviour. I will also highlight preliminary results on prototype melanin-based bioelectronics devices and discuss possible architectures to realise elements such as solid-state switches and transducers. [1] "The physical and chemical properties of eumelanin", P. Meredith and T. Sarna, Pigment Cell Research, 19(6), pp572-594 (2006). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013). [3] "Is melanin a semiconductor: humidity induced self doping and the electrical conductivity of a biopolymer", A.B. Mostert, B.J. Powell, F.L. Pratt, G.R. Hanson, T. Sarna, I.R. Gentle and P. Meredith, Proceedings of the National Academy of Sciences of the USA, 109(23), 8943-8947 (2012).

Hydrogel ionotronics

NASA Astrophysics Data System (ADS)

Yang, Canhui; Suo, Zhigang

2018-06-01

An ionotronic device functions by a hybrid circuit of mobile ions and mobile electrons. Hydrogels are stretchable, transparent, ionic conductors that can transmit electrical signals of high frequency over long distance, enabling ionotronic devices such as artificial muscles, skins and axons. Moreover, ionotronic luminescent devices, ionotronic liquid crystal devices, touchpads, triboelectric generators, artificial eels and gel-elastomer-oil devices can be designed based on hydrogels. In this Review, we discuss first-generation hydrogel ionotronic devices and the challenges associated with the mechanical properties and the chemistry of the materials. We examine how strong and stretchable adhesion between hydrophilic and hydrophobic polymer networks can be achieved, how water can be retained in hydrogels and how to design hydrogels that resist fatigue under cyclic loads. Finally, we highlight applications of hydrogel ionotronic devices and discuss the future of the field.

NASA Wearable Technology CLUSTER 2013-2014 Report

NASA Technical Reports Server (NTRS)

Simon, Cory; Dunne, Lucy; Zeagler, Clint; Martin, Tom; Pailes-Friedman, Rebecca

2014-01-01

Wearable technology has the potential to revolutionize the way humans interact with one another, with information, and with the electronic systems that surround them. This change can already be seen in the dramatic increase in the availability and use of wearable health and activity monitors. These devices continuously monitor the wearer using on-­-body sensors and wireless communication. They provide feedback that can be used to improve physical health and performance. Smart watches and head mounted displays are also receiving a great deal of commercial attention, providing immediate access to information via graphical displays, as well as additional sensing features. For the purposes of the Wearable Technology CLUSTER, wearable technology is broadly defined as any electronic sensing, human interfaces, computing, or communication that is mounted on the body. Current commercially available wearable devices primarily house electronics in rigid packaging to provide protection from flexing, moisture, and other contaminants. NASA mentors are interested in this approach, but are also interested in direct integration of electronics into clothing to enable more comfortable systems. For human spaceflight, wearable technology holds a great deal of promise for significantly improving safety, efficiency, autonomy, and research capacity for the crew in space and support personnel on the ground. Specific capabilities of interest include: Continuous biomedical monitoring for research and detection of health problems. Environmental monitoring for individual exposure assessments and alarms. Activity monitoring for responsive robotics and environments. Multi-modal caution and warning using tactile, auditory, and visual alarms. Wireless, hands-free, on-demand voice communication. Mobile, on-demand access to space vehicle and robotic displays and controls. Many technical challenges must be overcome to realize these wearable technology applications. For example, to make a wearable device that is both functional and comfortable for long duration wear, developers must strive to reduce electronic mass and volume while also addressing constraints imposed by the body attachment method. Depending on the application, the device must be placed in a location that the user can see and reach, and that provides the appropriate access to air and the wearer's skin. Limited power is available from body-­-worn batteries and heat must be managed to prevent discomfort. If the clothing is to be washed, there are additional durability and washability hurdles that traditional electronics are not designed to address. Finally, each specific capability has unique technical challenges that will likely require unique solutions. In addition to the technical challenges, development of wearable devices is made more difficult by the diversity of skills required and the historic lack of collaboration across domains. Wearable technology development requires expertise in textiles engineering, apparel design, software and computer engineering, electronic design and manufacturing, human factors engineering, and application-­-specific fields such as acoustics, medical devices, and sensing. Knowledge from each of these domains must be integrated to create functional and comfortable devices. For this reason, the diversity of knowledge and experience represented in the Wearable Technology is critical to overcoming the fundamental challenges in the field.

Chemical modification of group IV graphene analogs

PubMed Central

Nakano, Hideyuki; Tetsuka, Hiroyuki; Spencer, Michelle J. S.; Morishita, Tetsuya

2018-01-01

Abstract Mono-elemental two-dimensional (2D) crystals (graphene, silicene, germanene, stanene, and so on), termed 2D-Xenes, have been brought to the forefront of scientific research. The stability and electronic properties of 2D-Xenes are main challenges in developing practical devices. Therefore, in this review, we focus on 2D free-standing group-IV graphene analogs (graphene quantum dots, silicane, and germanane) and the functionalization of these sheets with organic moieties, which could be handled under ambient conditions. We highlight the present results and future opportunities, functions and applications, and novel device concepts. PMID:29410713