Nonequilibrium Langevin approach to quantum optics in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Portolan, S.; di Stefano, O.; Savasta, S.; Rossi, F.; Girlanda, R.

2008-01-01

Recently, the possibility of generating nonclassical polariton states by means of parametric scattering has been demonstrated. Excitonic polaritons propagate in a complex interacting environment and contain real electronic excitations subject to scattering events and noise affecting quantum coherence and entanglement. Here, we present a general theoretical framework for the realistic investigation of polariton quantum correlations in the presence of coherent and incoherent interaction processes. The proposed theoretical approach is based on the nonequilibrium quantum Langevin approach for open systems applied to interacting-electron complexes described within the dynamics controlled truncation scheme. It provides an easy recipe to calculate multitime correlation functions which are key quantities in quantum optics. As a first application, we analyze the buildup of polariton parametric emission in semiconductor microcavities including the influence of noise originating from phonon-induced scattering.

Parametric interactions in presence of different size colloids in semiconductor quantum plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanshpal, R., E-mail: ravivanshpal@gmail.com; Sharma, Uttam; Dubey, Swati

2015-07-31

Present work is an attempt to investigate the effect of different size colloids on parametric interaction in semiconductor quantum plasma. Inclusion of quantum effect is being done in this analysis through quantum correction term in classical hydrodynamic model of homogeneous semiconductor plasma. The effect is associated with purely quantum origin using quantum Bohm potential and quantum statistics. Colloidal size and quantum correction term modify the parametric dispersion characteristics of ion implanted semiconductor plasma medium. It is found that quantum effect on colloids is inversely proportional to their size. Moreover critical size of implanted colloids for the effective quantum correction ismore » determined which is found to be equal to the lattice spacing of the crystal.« less

Spatially selective assembly of quantum dot light emitters in an LED using engineered peptides.

PubMed

Demir, Hilmi Volkan; Seker, Urartu Ozgur Safak; Zengin, Gulis; Mutlugun, Evren; Sari, Emre; Tamerler, Candan; Sarikaya, Mehmet

2011-04-26

Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be assembled at explicit locations for enhanced functionality. Conventional approaches cannot meet these requirements where assembly of nanocrystals is usually material-nonspecific, thereby limiting the control of their spatial distribution. Here we demonstrate directed self-assembly of quantum dot emitters at material-specific locations in a color-conversion LED containing several material components including a metal, a dielectric, and a semiconductor. We achieve a spatially selective immobilization of quantum dot emitters by using the unique material selectivity characteristics provided by the engineered solid-binding peptides as smart linkers. Peptide-decorated quantum dots exhibited several orders of magnitude higher photoluminescence compared to the control groups, thus, potentially opening up novel ways to advance these photonic platforms in applications ranging from chemical to biodetection.

Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

NASA Astrophysics Data System (ADS)

Kotb, Amer

2015-06-01

The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach-Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor ( Q-factor) on signals and QDs-SOAs' parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ˜1 Tb/s.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

NASA Astrophysics Data System (ADS)

Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

2018-01-01

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Scalable quantum computer architecture with coupled donor-quantum dot qubits

DOEpatents

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Electrons and Phonons in Semiconductor Multilayers

NASA Astrophysics Data System (ADS)

Ridley, B. K.

1996-11-01

This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

The emission wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Xingxia; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210; University of Chinese Academy of Sciences, Beijing 100049

2015-12-14

Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the emission wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.

Quantum memory on a charge qubit in an optical microresonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.

2017-10-01

A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.

Two stream instability in n-type gallium arsenide semiconductor quantum plasma

NASA Astrophysics Data System (ADS)

Ghosh, S.; Muley, Apurva

2018-01-01

By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

NASA Astrophysics Data System (ADS)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal-oxide-semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal-oxide-semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal-oxide-semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal-oxide-semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alvarado, Samuel R.; Guo, Yijun; Ruberu, T. Purnima A.

2014-03-15

The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describemore » our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).« less

High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

PubMed

Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

2010-03-29

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

Two-time quantum transport and quantum diffusion.

PubMed

Kleinert, P

2009-05-01

Based on the nonequilibrium Green's function technique, a unified theory is developed that covers quantum transport and quantum diffusion in bulk semiconductors on the same footing. This approach, which is applicable to transport via extended and localized states, extends previous semiphenomenological studies and puts them on a firm microscopic basis. The approach is sufficiently general and applies not only to well-studied quantum-transport problems, but also to models, in which the Hamiltonian does not commute with the dipole operator. It is shown that even for the unified treatment of quantum transport and quantum diffusion in homogeneous systems, all quasimomenta of the carrier distribution function are present and fulfill their specific function. Particular emphasis is put on the double-time nature of quantum kinetics. To demonstrate the existence of robust macroscopic transport effects that have a true double-time character, a phononless steady-state current is identified that appears only beyond the generalized Kadanoff-Baym ansatz.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

PubMed

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Nonequilibrium Green's functions theory for the alpha factor of quantum cascade lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pereira, Mauro F.; Winge, David O.; Wacker, Andreas; Jumpertz, Louise; Michel, Florian; Pawlus, Robert; Elsaesser, Wolfgang E.; Schires, Kevin; Carras, Mathieu; Grillot, Frédéric

2016-10-01

The linewidth of a conventional laser is due to fluctuations in the laser field due to spontaneous emission and described by the Schalow-Townes formula. In addition to that, in a semiconductor laser there is a contribution arising from fluctuations in the refractive index induced by carrier density fluctuations. The later are quantitatively described by the linewidth enhancement or alpha factor [C. H. Henry, IEEE J. Quantum Electron. 18 (2), 259 (1982), W. W. Chow, S. W. Koch and M. Sargent III, Semiconductor-Laser Physics, Springer-Verlag (1994), M.F. Pereira Jr et al, J. Opt. Soc. Am. B10, 765 (1993). In this paper we investigate the alpha factor of quantum cascade lasers under actual operating conditions using the Nonequilibrium Greens Functions approach [A. Wacker et a, IEEE Journal of Sel. Top. in Quantum Electron.,19 1200611, (2013), T. Schmielau and M.F. Pereira, Appl. Phys. Lett. 95 231111, (2009)]. The simulations are compared with recent results obtained with different optical feedback techniques [L. Jumpertz et al, AIP ADVANCES 6, 015212 (2016)].

Gain in three-dimensional metamaterials utilizing semiconductor quantum structures

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Klingbeil, Matthias; Kerbst, Jochen; Rottler, Andreas; Costa, Ricardo; Koitmäe, Aune; Bröll, Markus; Heyn, Christian; Stark, Yuliya; Heitmann, Detlef; Mendach, Stefan

2011-10-01

We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a tightly bent superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

Plasmon absorption modulator systems and methods

DOEpatents

Kekatpure, Rohan Deodatta; Davids, Paul

2014-07-15

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

A Semimetal Nanowire Rectifier: Balancing Quantum Confinement and Surface Electronegativity.

PubMed

Sanchez-Soares, Alfonso; Greer, James C

2016-12-14

For semimetal nanowires with diameters on the order of 10 nm, a semimetal-to-semiconductor transition is observed due to quantum confinement effects. Quantum confinement in a semimetal lifts the degeneracy of the conduction and valence bands in a "zero" gap semimetal or shifts energy levels with a "negative" overlap to form conduction and valence bands. For semimetal nanowires with diameters less than 10 nm, the band gap energy can be significantly larger than the thermal energy at room temperature resulting in a new class of semiconductors suitable for nanoelectronics. As a nanowire's diameter is reduced, its surface-to-volume ratio increases rapidly leading to an increased impact of surface chemistry on its electronic structure. Energy level shifts to states in the vicinity of the Fermi energy with varying surface electronegativity are shown to be comparable in magnitude to quantum confinement effects arising in nanowires with diameters of a few nanometer; these two effects can counteract one another leading to semimetallic behavior at nanowire cross sections at which confinement effects would otherwise dominate. Abruptly changing the surface terminating species along the length of a nanowire can lead to an abrupt change in the surface electronegativity. This can result in the formation of a semimetal-semiconductor junction within a monomaterial nanowire without impurity doping nor requiring the formation of a heterojunction. Using density functional theory in tandem with a Green's function approach to determine electronic structure and charge transport, respectively, current rectification is calculated for such a junction. Current rectification ratios of the order of 10 3 -10 5 are predicted at applied biases as low as 300 mV. It is concluded that rectification can be achieved at essentially molecular length scales with conventional biasing, while rivaling the performance of macroscopic semiconductor diodes.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

NASA Astrophysics Data System (ADS)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Development of cadmium-free quantum dot for intracellular labelling through electroporation or lipid-calcium-phosphate

NASA Astrophysics Data System (ADS)

Liu, Ying-Feng; Hung, Wei-Ling; Hou, Tzh-Yin; Huang, Hsiu-Ying; Lin, Cheng-An J.

2016-04-01

Traditional fluorescent labelling techniques has severe photo-bleaching problem such as organic dyes and fluorescent protein. Quantum dots made up of traditional semiconductor (CdSe/ZnS) material has sort of biological toxicity. This research has developed novel Cd-free quantum dots divided into semiconductor (Indium phosphide, InP) and noble metal (Gold). Former has lower toxicity compared to traditional quantum dots. Latter consisting of gold (III) chloride (AuCl3) and toluene utilizes sonochemical preparation and different stimulus to regulate fluorescent wavelength. Amphoteric macromolecule surface technology and ligand Exchange in self-Assembled are involved to develop hydrophilic nanomaterials which can regulate the number of grafts per molecule of surface functional groups. Calcium phosphate (CaP) nanoparticle (NP) with an asymmetric lipid bilayer coating technology developed for intracellular delivery and labelling has synthesized Cd-free quantum dots possessing high brightness and multi-fluorescence successfully. Then, polymer coating and ligand exchange transfer to water-soluble materials to produce liposome nanomaterials as fluorescent probes and enhancing medical applications of nanotechnology.

Effect of interface roughness on Auger recombination in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson

2017-03-01

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

Semiconductor Quantum Dots with Photoresponsive Ligands.

PubMed

Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

2016-10-01

Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

Photon-assisted quantum transport in quantum point contacts

NASA Astrophysics Data System (ADS)

Hu, Qing

1993-02-01

We have studied the feasibility of photon-assisted quantum transport in semiconductor quantum point contacts or electron waveguides. Due to photon-induced intersubband transitions, it is expected that the drain/source conductance of the quantum point contacts can be modulated by far-infrared (f not less than 300 GHz) radiation, which is similar to the photon-assisted tunneling in superconducting tunnel junctions. An antenna/gate electrodes structure will be used to couple far-infrared photons into quantum point contacts of submicron dimensions. A calculation of the photon-induced drain/source current as a function of the far-infrared radiation power is also presented.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Activation of molecular catalysts using semiconductor quantum dots

DOEpatents

Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

2011-10-04

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Quantum cellular automata

NASA Astrophysics Data System (ADS)

Porod, Wolfgang; Lent, Craig S.; Bernstein, Gary H.

1994-06-01

The Notre Dame group has developed a new paradigm for ultra-dense and ultra-fast information processing in nanoelectronic systems. These Quantum Cellular Automata (QCA's) are the first concrete proposal for a technology based on arrays of coupled quantum dots. The basic building block of these cellular arrays is the Notre Dame Logic Cell, as it has been called in the literature. The phenomenon of Coulomb exclusion, which is a synergistic interplay of quantum confinement and Coulomb interaction, leads to a bistable behavior of each cell which makes possible their use in large-scale cellular arrays. The physical interaction between neighboring cells has been exploited to implement logic functions. New functionality may be achieved in this fashion, and the Notre Dame group invented a versatile majority logic gate. In a series of papers, the feasibility of QCA wires, wire crossing, inverters, and Boolean logic gates was demonstrated. A major finding is that all logic functions may be integrated in a hierarchial fashion which allows the design of complicated QCA structures. The most complicated system which was simulated to date is a one-bit full adder consisting of some 200 cells. In addition to exploring these new concepts, efforts are under way to physically realize such structures both in semiconductor and metal systems. Extensive modeling work of semiconductor quantum dot structures has helped identify optimum design parameters for QCA experimental implementations.

Superlattice photoelectrodes for photoelectrochemical cells

DOEpatents

Nozik, Arthur J.

1987-01-01

A superlattice or multiple-quantum-well semiconductor is used as a photoelectrode in a photoelectrochemical process for converting solar energy into useful fuels or chemicals. The quantum minibands of the superlattice or multiple-quantum-well semiconductor effectively capture hot-charge carriers at or near their discrete quantum energies and deliver them to drive a chemical reaction in an electrolyte. The hot-charge carries can be injected into the electrolyte at or near the various discrete multiple energy levels quantum minibands, or they can be equilibrated among themselves to a hot-carrier pool and then injected into the electrolyte at one average energy that is higher than the lowest quantum band gap in the semiconductor.

Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

PubMed

Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

2013-10-09

In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

Exciton absorption of entangled photons in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

2013-03-01

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

DOEpatents

Forrest, Stephen R.

2008-08-19

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Diluted magnetic semiconductors with narrow band gaps

NASA Astrophysics Data System (ADS)

Gu, Bo; Maekawa, Sadamichi

2016-10-01

We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Quantum efficiency measurements of eROSITA pnCCDs

NASA Astrophysics Data System (ADS)

Ebermayer, Stefanie; Andritschke, Robert; Elbs, Johannes; Meidinger, Norbert; Strüder, Lothar; Hartmann, Robert; Gottwald, Alexander; Krumrey, Michael; Scholze, Frank

2010-07-01

For the eROSITA X-ray telescope, which is planned to be launched in 2012, detectors were developed and fabricated at the MPI Semiconductor Laboratory. The fully depleted, back-illuminated pnCCDs have an ultrathin pn-junction to improve the low-energy X-ray response function and quantum efficiency. The device thickness of 450 μm is fully sensitive to X-ray photons yielding high quantum efficiency of more than 90% at photon energies of 10 keV. An on-chip filter is deposited on top of the entrance window to suppress visible and UV light which would interfere with the X-ray observations. The pnCCD type developed for the eROSITA telescope was characterized in terms of quantum efficiency and spectral response function. The described measurements were performed in 2009 at the synchrotron radiation sources BESSY II and MLS as cooperation between the MPI Semiconductor Laboratory and the Physikalisch-Technische Bundesanstalt (PTB). Quantum efficiency measurements over a wide range of photon energies from 3 eV to 11 keV as well as spectral response measurements are presented. For X-ray energies from 3 keV to 10 keV the quantum efficiency of the CCD including on-chip filter is shown to be above 90% with an attenuation of visible light of more than five orders of magnitude. A detector response model is described and compared to the measurements.

Multi-harmonic quantum dot optomechanics in fused LiNbO3-(Al)GaAs hybrids

NASA Astrophysics Data System (ADS)

Nysten, Emeline D. S.; Huo, Yong Heng; Yu, Hailong; Song, Guo Feng; Rastelli, Armando; Krenner, Hubert J.

2017-11-01

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises of a surface acoustic wave chip made from highly piezoelectric LiNbO3 and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO3 over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane, both in the electrical and optical domain. We demonstrate the enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling, making our hybrid device ideally suited for applications in semiconductor based quantum acoustics.

Development and Application of Explicitly Correlated Wave Function Based Methods for the Investigation of Optical Properties of Semiconductor Nanomaterials

NASA Astrophysics Data System (ADS)

Elward, Jennifer Mary

Semiconductor nanoparticles, or quantum dots (QDs), are well known to have very unique optical and electronic properties. These properties can be controlled and tailored as a function of several influential factors, including but not limited to the particle size and shape, effect of composition and heterojunction as well as the effect of ligand on the particle surface. This customizable nature leads to extensive experimental and theoretical research on the capabilities of these quantum dots for many application purposes. However, in order to be able to understand and thus further the development of these materials, one must first understand the fundamental interaction within these nanoparticles. In this thesis, I have developed a theoretical method which is called electron-hole explicitly correlated Hartee-Fock (eh-XCHF). It is a variational method for solving the electron-hole Schrodinger equation and has been used in this work to study electron-hole interaction in semiconductor quantum dots. The method was benchmarked with respect to a parabolic quantum dot system, and ground state energy and electron-hole recombination probability were computed. Both of these properties were found to be in good agreement with expected results. Upon successful benchmarking, I have applied the eh-XCHF method to study optical properties of several quantum dot systems including the effect of dot size on exciton binding energy and recombination probability in a CdSe quantum dot, the effect of shape on a CdSe quantum dot, the effect of heterojunction on a CdSe/ZnS quantum dot and the effect of quantum dot-biomolecule interaction within a CdSe-firefly Luciferase protein conjugate system. As metrics for assessing the effect of these influencers on the electron-hole interaction, the exciton binding energy, electron-hole recombination probability and the average electron-hole separation distance have been computed. These excitonic properties have been found to be strongly infuenced by the changing composition of the particle. It has also been found through this work that the explicitly correlated method performs very well when computing these properties as it provides a feasible computational route to compare to both experimental and other theoretical results.

Electrostatic and electrodynamic response properties of nanostructures

NASA Astrophysics Data System (ADS)

Ayaz, Yuksel

1999-11-01

This thesis addresses the problem of nanostructure dielectric response to excitation by electric fields, both in the electrostatic c→infinity and the electrodynamic regimes. The nanostructures treated include planar quantum wells and quantum wires embedded in the vicinity of the bounding surface of the host semiconductor medium. Various cases are analyzed, including a single well or wire, a double well or wire, a lattice of N wells or wires and an infinite superlattice of wells or wires. The host medium is considered to have phonons and/or a bulk semiconductor plasma which interact with the plasmons of the embedded quantum wells or wires, and the host plasma is treated in both the local "cold" plasma regime and the nonlocal "hot" plasma regime. New hybridized quantum plasma collective modes emerge from these studies. The techniques employed here include the variational differential formulation of integral equations for the inverse dielectric function (in electrostatic case) and the dyadic Green's function (in the electrodynamic case) for the various systems described above. These integral equations are then solved in frequency-position representation by a variety of techniques depending on the geometrical features of the particular problem. Explicit closed form solutions for the inverse dielectric function or dyadic Green's function facilitate identification of the coupled collective modes in terms of their frequency poles, and the residues at the pole positions provide the relative amplitudes with which these normal modes respond to external excitation. Interesting features found include, for example, explicit formulas showing the transference of coupling of a two dimensional (2D) quantum well plasmon from a surface phonon to a bulk phonon as the 2D quantum well is displaced away from the bounding surface, deeper into the medium.

Controlled Quantum Operations of a Semiconductor Three-Qubit System

NASA Astrophysics Data System (ADS)

Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

2018-02-01

In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Sourav; Das, Tushar Kanti; Chatterjee, Prasanta

The influence of exchange-correlation potential, quantum Bohm term, and degenerate pressure on the nature of solitary waves in a quantum semiconductor plasma is investigated. It is found that an amplitude and a width of the solitary waves change with variation of different parameters for different semiconductors. A deformed Korteweg-de Vries equation is obtained for propagation of nonlinear waves in a quantum semiconductor plasma, and the effects of different plasma parameters on the solution of the equation are also presented.

Quantum-relativistic velocities in nano-transport

NASA Astrophysics Data System (ADS)

Di Sia, Paolo

2018-07-01

In this paper I present an interesting analysis focused on the hypothesis of relativistic velocities and quantum aspects inside a nanostructure. A new analytical model is considered, able to well describe the conductors in nanostructured form. Considering appropriate scattering times, it is possible to mimic the infrared properties of oxides and semiconductors in the nano-form. The new presented result concerns the analytical form of the quantum-relativistic velocities correlation function, and how it works with experimental data of carbon nanotube films.

Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

DTIC Science & Technology

2015-03-04

conversion efficiency of InAs quantum dot solar cell by using a single layer anatase TiO2 anti-reflection coating,” R. Vasan, Y. F. Makableh, J. C...dx.doi.org/10.1557//opl.2013.742 9. “The Optimization of InP/ZnS Core/Shell Nanocrystals and TiO2 Nanotubes for Quantum Dot Sensitized Solar Cells ...Quantum Dots Solar Cells Performance,” J. C. Sarker, Y. F. Makableh, R. Vasan, S. Lee, M. O. Manasreh, and M. Benamara, IEEE J. Photovoltaic. (submitted

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

PubMed Central

Branny, Artur; Kumar, Santosh; Proux, Raphaël; Gerardot, Brian D

2017-01-01

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. PMID:28530219

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE PAGES

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; ...

2017-05-16

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

PubMed Central

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-01-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications. PMID:28508866

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

NASA Astrophysics Data System (ADS)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-05-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.

Biocompatible Quantum Dots for Biological Applications

PubMed Central

Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

2011-01-01

Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Engel, Jesse Hart

Given a rapidly developing world, the need exists for inexpensive renewable energy alternatives to help avoid drastic climate change. Photovoltaics have the potential to fill the energy needs of the future, but significant cost decreases are necessary for widespread adoption. Semiconductor nanocrystals, also known as quantum dots, are a nascent technology with long term potential to enable inexpensive and high efficiency photovoltaics. When deposited as a film, quantum dots form unique nanocomposites whose electronic and optical properties can be broadly tuned through manipulation of their individual constituents. The contents of this thesis explore methods to understand and optimize the optoelectronic properties of PbSe quantum dot films for use in photovoltaic applications. Systematic optimization of photovoltaic performance is demonstrated as a function of nanocrystal size, establishing the potential for utilizing extreme quantum confinement to improve device energetics and alignment. Detailed investigations of the mechanisms of electrical transport are performed, revealing that electronic coupling in quantum dot films is significantly less than often assumed based on optical shifts. A method is proposed to employ extended regions of built-in electrical field, through controlled doping, to sidestep issues of poor transport. To this end, treatments with chemical redox agents are found to effect profound and reversible doping within nanocrystal films, sufficient to enable their use as chemical sensors, but lacking the precision required for optoelectronic applications. Finally, a novel doping method employing "redox buffers" is presented to enact precise, stable, and reversible charge-transfer doping in porous semiconductor films. An example of oxidatively doping PbSe quantum dot thin films is presented, and the future potential for redox buffers in photovoltaic applications is examined.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habercorn, Lasse; Merkl, Jan-Philip; Kloust, Hauke Christian

With the polymer encapsulation of quantum dots via seeded emulsion polymerization we present a powerful tool for the preparation of fluorescent nanoparticles with an extraordinary stability in aqueous solution. The method of the seeded emulsion polymerization allows a straightforward and simple in situ functionalization of the polymer shell under preserving the optical properties of the quantum dots. These requirements are inevitable for the application of semiconductor nanoparticles as markers for biomedical applications. Polymer encapsulated quantum dots have shown only a marginal loss of quantum yields when they were exposed to copper(II)-ions. Under normal conditions the quantum dots were totally quenchedmore » in presence of copper(II)-ions. Furthermore, a broad range of in situ functionalized polymer-coated quantum dots were obtained by addition of functional monomers or surfactants like fluorescent dye molecules, antibodies or specific DNA aptamers. Furthermore the emulsion polymerization can be used to prepare multifunctional hybrid systems, combining different nanoparticles within one construct without any adverse effect of the properties of the starting materials.{sup 1,2}.« less

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

NASA Astrophysics Data System (ADS)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-06-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

PubMed Central

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

A Parameter-Free Semilocal Exchange Energy Functional for Two-Dimensional Quantum Systems.

PubMed

Patra, Abhilash; Jana, Subrata; Samal, Prasanjit

2018-04-05

The method of constructing semilocal density functional for exchange in two dimensions using one of the premier approaches, i.e., density matrix expansion, is revisited, and an accurate functional is constructed. The form of the functional is quite simple and includes no adjustable semiempirical parameters. In it, the kinetic energy dependent momentum is used to compensate nonlocal effects of the system. The functional is then examined by considering the very well-known semiconductor quantum dot systems. And despite its very simple form, the results obtained for quantum dots containing a higher number of electrons agrees pretty well with that of the standard exact exchange theory. Some of the desired properties relevant for the two-dimensional exchange functional and the lower bound associated with it are also discussed. It is observed that the above parameter-free semilocal exchange functional satisfies most of the discussed conditions.

Robust Population Inversion by Polarization Selective Pulsed Excitation

PubMed Central

Mantei, D.; Förstner, J.; Gordon, S.; Leier, Y. A.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Zrenner, A.

2015-01-01

The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths. PMID:26000910

NREL Senior Research Fellow Honored by The Journal of Physical Chemistry |

Science.gov Websites

and quantum size effects in semiconductors and carrier dynamics in semiconductor quantum dots and using hot carrier effects, size quantization, and superlattice concepts that could, in principle, enable

Biomolecule/nanomaterial hybrid systems for nanobiotechnology.

PubMed

Tel-Vered, Ran; Yehezkeli, Omer; Willner, Itamar

2012-01-01

The integration of biomolecules with metallic or semiconductor nanoparticles or carbon nanotubes yields new hybrid nanostructures of unique features that combine the properties of the biomolecules and of the nano-elements. These unique features of the hybrid biomolecule/nanoparticle systems provide the basis for the rapid development of the area of nanobiotechnology. Recent advances in the implementation of hybrid materials consisting of biomolecules and metallic nanoparticles or semiconductor quantum dots will be discussed. The following topics will be exemplified: (i) The electrical wiring of redox enzymes with electrodes by means of metallic nanoparticles or carbon nanotubes, and the application of the modified electrodes as amperometric biosensors or for the construction of biofuel cells. (ii) The biocatalytic growth of metallic nanoparticles as a means to construct optical or electrical sensors. (iii) The functionalization of semiconductor quantum dots with biomolecules and the application of the hybrid nanostructures for developing different optical sensors, including intracellular sensor systems. (iv) The use of biomolecule-metallic nanoparticle nanostructures as templates for growing metallic nanowires, and the construction of fuel-driven nano-transporters.

Coulomb Mediated Hybridization of Excitons in Coupled Quantum Dots.

PubMed

Ardelt, P-L; Gawarecki, K; Müller, K; Waeber, A M; Bechtold, A; Oberhofer, K; Daniels, J M; Klotz, F; Bichler, M; Kuhn, T; Krenner, H J; Machnikowski, P; Finley, J J

2016-02-19

We report Coulomb mediated hybridization of excitonic states in optically active InGaAs quantum dot molecules. By probing the optical response of an individual quantum dot molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single-particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic eight-band k·p calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial semiconductor molecule.

Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

2016-10-01

Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models.

PubMed

Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S

2013-08-21

In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.

Quantum state reconstruction and photon number statistics for low dimensional semiconductor opto-electronic devices

NASA Astrophysics Data System (ADS)

Böhm, Fabian; Grosse, Nicolai B.; Kolarczik, Mirco; Herzog, Bastian; Achtstein, Alexander; Owschimikow, Nina; Woggon, Ulrike

2017-09-01

Quantum state tomography and the reconstruction of the photon number distribution are techniques to extract the properties of a light field from measurements of its mean and fluctuations. These techniques are particularly useful when dealing with macroscopic or mesoscopic systems, where a description limited to the second order autocorrelation soon becomes inadequate. In particular, the emission of nonclassical light is expected from mesoscopic quantum dot systems strongly coupled to a cavity or in systems with large optical nonlinearities. We analyze the emission of a quantum dot-semiconductor optical amplifier system by quantifying the modifications of a femtosecond laser pulse propagating through the device. Using a balanced detection scheme in a self-heterodyning setup, we achieve precise measurements of the quadrature components and their fluctuations at the quantum noise limit1. We resolve the photon number distribution and the thermal-to-coherent evolution in the photon statistics of the emission. The interferometric detection achieves a high sensitivity in the few photon limit. From our data, we can also reconstruct the second order autocorrelation function with higher precision and time resolution compared with classical Hanbury Brown-Twiss experiments.

Longitudinal wave function control in single quantum dots with an applied magnetic field

PubMed Central

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-01

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018

Longitudinal wave function control in single quantum dots with an applied magnetic field.

PubMed

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-27

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

NASA Astrophysics Data System (ADS)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.

PubMed

Korenev, V L; Akimov, I A; Zaitsev, S V; Sapega, V F; Langer, L; Yakovlev, D R; Danilov, Yu A; Bayer, M

2012-07-17

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

The Physics of Semiconductors

NASA Astrophysics Data System (ADS)

Brennan, Kevin F.

1999-02-01

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Interference Lithography for Optical Devices and Coatings

DTIC Science & Technology

2010-01-01

semiconductor quantum dots. J. Chem. Phys. 2004, 121, 7421. 100. Jeon, S.; Braun, P. V., Hydrothermal Synthesis of Er-Doped Luminescent TiO2 Nanoparticles ...Silica Nanoparticle Synthesis .....................................................................23 2.2.2 Polymer Matrix Formulation...41 CHAPTER 3: NANOPARTICLE SYNTHESIS , FUNCTIONALIZATION, AND INCORPORATION INTO

Physics of Electronic Materials

NASA Astrophysics Data System (ADS)

Rammer, Jørgen

2017-03-01

1. Quantum mechanics; 2. Quantum tunneling; 3. Standard metal model; 4. Standard conductor model; 5. Electric circuit theory; 6. Quantum wells; 7. Particle in a periodic potential; 8. Bloch currents; 9. Crystalline solids; 10. Semiconductor doping; 11. Transistors; 12. Heterostructures; 13. Mesoscopic physics; 14. Arithmetic, logic and machines; Appendix A. Principles of quantum mechanics; Appendix B. Dirac's delta function; Appendix C. Fourier analysis; Appendix D. Classical mechanics; Appendix E. Wave function properties; Appendix F. Transfer matrix properties; Appendix G. Momentum; Appendix H. Confined particles; Appendix I. Spin and quantum statistics; Appendix J. Statistical mechanics; Appendix K. The Fermi-Dirac distribution; Appendix L. Thermal current fluctuations; Appendix M. Gaussian wave packets; Appendix N. Wave packet dynamics; Appendix O. Screening by symmetry method; Appendix P. Commutation and common eigenfunctions; Appendix Q. Interband coupling; Appendix R. Common crystal structures; Appendix S. Effective mass approximation; Appendix T. Integral doubling formula; Bibliography; Index.

Optically programmable electron spin memory using semiconductor quantum dots.

PubMed

Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

2004-11-04

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

Hole-cyclotron instability in semiconductor quantum plasmas

NASA Astrophysics Data System (ADS)

Areeb, F.; Rasheed, A.; Jamil, M.; Siddique, M.; Sumera, P.

2018-01-01

The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model. The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of. The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥z ̂ , speed of the externally injected electron beam v0∥k , thermal temperature of the electron beam τ, external magnetic field B0∥z ̂ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density. The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

NASA Astrophysics Data System (ADS)

Kleemans, N. A. J. M.; van Bree, J.; Govorov, A. O.; Keizer, J. G.; Hamhuis, G. J.; Nötzel, R.; Silov, A. Yu.; Koenraad, P. M.

2010-07-01

Many-body interactions give rise to fascinating physics such as the X-ray Fermi-edge singularity in metals, the Kondo effect in the resistance of metals with magnetic impurities and the fractional quantum Hall effect. Here we report the observation of striking many-body effects in the optical spectra of a semiconductor quantum dot interacting with a degenerate electron gas. A semiconductor quantum dot is an artificial atom, the properties of which can be controlled by means of a tunnel coupling between a metallic contact and the quantum dot. Previous studies concern mostly the regime of weak tunnel coupling, whereas here we investigate the regime of strong coupling, which markedly modifies the optical spectra. In particular we observe two many-body exciton states: Mahan and hybrid excitons. These experimental results open the route towards the observation of a tunable Kondo effect in excited states of semiconductors and are of importance for the technological implementation of quantum dots in devices for quantum information processing.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

DOEpatents

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

NASA Astrophysics Data System (ADS)

Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla

2018-02-01

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

2017-05-01

This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

Epitaxy of advanced nanowire quantum devices

NASA Astrophysics Data System (ADS)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

NASA Astrophysics Data System (ADS)

Shen, Yaoming

Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum-dot molecules (QDMs), which are clusters of a few QDs, has attracted attention as a possible implementation of future quantum devices such as quantum cellular antomata. With the advances in crystal growth techniques, the fabrication methods for nanostructures have been improved continuously. Lateral QDMs have been achieved. As a side topic, lateral QDMs have been studied and the result is presented in the last chapter.

Semiconductor quantum dot scintillation under gamma-ray irradiation.

PubMed

Létant, S E; Wang, T-F

2006-12-01

We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma irradiation and compare the energy resolution of the 59 keV line of americium-241 obtained with our quantum dot-glass nanocomposite to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon-transport models.

Nonlinear structures: Cnoidal, soliton, and periodical waves in quantum semiconductor plasma

NASA Astrophysics Data System (ADS)

Tolba, R. E.; El-Bedwehy, N. A.; Moslem, W. M.; El-Labany, S. K.; Yahia, M. E.

2016-01-01

Properties and emerging conditions of various nonlinear acoustic waves in a three dimensional quantum semiconductor plasma are explored. A plasma fluid model characterized by degenerate pressures, exchange correlation, and quantum recoil forces is established and solved. Our analysis approach is based on the reductive perturbation theory for deriving the Kadomtsev-Petviashvili equation from the fluid model and solving it by using Painlevé analysis to come up with different nonlinear solutions that describe different pulse profiles such as cnoidal, soliton, and periodical pulses. The model is then employed to recognize the possible perturbations in GaN semiconductor.

Nonlinear structures: Cnoidal, soliton, and periodical waves in quantum semiconductor plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tolba, R. E., E-mail: tolba-math@yahoo.com; El-Bedwehy, N. A., E-mail: nab-elbedwehy@yahoo.com; Moslem, W. M., E-mail: wmmoslem@hotmail.com

2016-01-15

Properties and emerging conditions of various nonlinear acoustic waves in a three dimensional quantum semiconductor plasma are explored. A plasma fluid model characterized by degenerate pressures, exchange correlation, and quantum recoil forces is established and solved. Our analysis approach is based on the reductive perturbation theory for deriving the Kadomtsev-Petviashvili equation from the fluid model and solving it by using Painlevé analysis to come up with different nonlinear solutions that describe different pulse profiles such as cnoidal, soliton, and periodical pulses. The model is then employed to recognize the possible perturbations in GaN semiconductor.

Berry phase dependent quantum trajectories of electron-hole pairs in semiconductors under intense terahertz fields

NASA Astrophysics Data System (ADS)

Yang, Fan; Liu, Ren-Bao

2013-03-01

Quantum evolution of particles under strong fields can be approximated by the quantum trajectories that satisfy the stationary phase condition in the Dirac-Feynmann path integrals. The quantum trajectories are the key concept to understand strong-field optics phenomena, such as high-order harmonic generation (HHG), above-threshold ionization (ATI), and high-order terahertz siedeband generation (HSG). The HSG in semiconductors may have a wealth of physics due to the possible nontrivial ``vacuum'' states of band materials. We find that in a spin-orbit-coupled semiconductor, the cyclic quantum trajectories of an electron-hole pair under a strong terahertz field accumulates nontrivial Berry phases. We study the monolayer MoS2 as a model system and find that the Berry phases are given by the Faraday rotation angles of the pulse emission from the material under short-pulse excitation. This result demonstrates an interesting Berry phase dependent effect in the extremely nonlinear optics of semiconductors. This work is supported by Hong Kong RGC/GRF 401512 and the CUHK Focused Investments Scheme.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1986-01-01

Superlattice photodetectors were investigated. A few major physical processes in the quantum-well heterostructures related to the photon detection and electron conduction mechanisms, the field effect on the wave functions and the energy levels of the electrons, and the optical absorption with and without the photon assistance were studied.

Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies

DOE PAGES

Seo, Hosung; Govoni, Marco; Galli, Giulia

2016-02-15

Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states maymore » be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.« less

Multifunctional quantum dots and liposome complexes in drug delivery

PubMed Central

Wang, Qi; Chao, Yimin

2018-01-01

Incorporating both diagnostic and therapeutic functions into a single nanoscale system is an effective modern drug delivery strategy. Combining liposomes with semiconductor quantum dots (QDs) has great potential to achieve such dual functions, referred to in this review as a liposomal QD hybrid system (L-QD). Here we review the recent literature dealing with the design and application of L-QD for advances in bio-imaging and drug delivery. After a summary of L-QD synthesis processes and evaluation of their properties, we will focus on their multifunctional applications, ranging from in vitro cell imaging to theranostic drug delivery approaches. PMID:28866655

Multifunctional quantum dots and liposome complexes in drug delivery.

PubMed

Wang, Qi; Chao, Yi-Min

2017-09-03

Incorporating both diagnostic and therapeutic functions into a single nanoscale system is an effective modern drug delivery strategy. Combining liposomes with semiconductor quantum dots (QDs) has great potential to achieve such dual functions, referred to in this review as a liposomal QD hybrid system (L-QD). Here we review the recent literature dealing with the design and application of L-QD for advances in bio-imaging and drug delivery. After a summary of L-QD synthesis processes and evaluation of their properties, we will focus on their multifunctional applications, ranging from in vitro cell imaging to theranostic drug delivery approaches.

Wigner molecules in carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2010-07-01

We demonstrate that electrons in quantum dots defined by electrostatic gates in semiconductor nanotubes freeze orderly in space realizing a “Wigner molecule.” Our exact diagonalization calculations uncover the features of the electron molecule, which may be accessed by tunneling spectroscopy—indeed some of them have already been observed by Deshpande and Bockrath [Nat. Phys. 4, 314 (2008)]10.1038/nphys895. We show that numerical results are satisfactorily reproduced by a simple ansatz vibrational wave function: electrons have localized wave functions, like nuclei in an ordinary molecule, whereas low-energy excitations are collective vibrations of electrons around their equilibrium positions.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1984-04-19

In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said first semiconductor material in bulk form.

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices

DTIC Science & Technology

2003-01-01

Kramer Fabrication of hcp-Co nanocrystals via rapid pyrolysis in inverse PS - b - P2VP micelles and thermal annealing Nano Letters In Press ...the figure) and different pump photon energies. a) hν=1.684eV, b ) hν= 1.536eV and c) hν= 1.433eV. All spectra are normalized to the maximum value of...correlation functions of two consecutively emitted photons from a single excited semiconductor quantum dot. We have shown that a 6 a) b ) 0.10 [ML/s] 250 nm 3.0

Synthesis, properties and biomedical applications of carbon-based quantum dots: An updated review.

PubMed

Namdari, Pooria; Negahdari, Babak; Eatemadi, Ali

2017-03-01

Carbon-based quantum dots (CQDs) are a newly developed class of carbon nano-materials that have attracted much interest and attention as promising competitors to already available semiconductor quantum dots owing to their un-comparable and unique properties. In addition, controllability of CQDs unique physiochemical properties is as a result of their surface passivation and functionalization. This is an update article (between 2013 and 2016) on the recent progress, characteristics and synthesis methods of CQDs and different advantages in varieties of applications. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

Optical Properties of III-V Semiconductor Nanostructures and Quantum Wells

DTIC Science & Technology

2006-12-31

measurements were made using a BOMEM Fourier-transform infrared spectrometer in conjunction with a continuous flow cryostat. A low- noise current...infrared photodetector ( QWIP ). Quantum well infrared photodetectors are designed from wide bandgap (III-V) semiconductor materials in such a way where...quantum confinement is created. Unlike HgCdTe which utilizes electronic transitions across the fundamental bandgap, QWIPs relies on transitions between

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

PubMed

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling.

PubMed

Wakai, Taiga; Sakamoto, Shoichi; Tomiya, Mitsuyoshi

2018-07-04

We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11-AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-[Formula: see text] characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-[Formula: see text] characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with 1D Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.

Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gehl, Michael; Gibson, Ricky; Zandbergen, Sander

Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

DOE PAGES

Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; ...

2016-02-01

Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

Observation of entanglement between a quantum dot spin and a single photon.

PubMed

Gao, W B; Fallahi, P; Togan, E; Miguel-Sanchez, J; Imamoglu, A

2012-11-15

Entanglement has a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, a main challenge is the efficient generation of entanglement between stationary (spin) and propagating (photon) quantum bits. Here we report the observation of quantum entanglement between a semiconductor quantum dot spin and the colour of a propagating optical photon. The demonstration of entanglement relies on the use of fast, single-photon detection, which allows us to project the photon into a superposition of red and blue frequency components. Our results extend the previous demonstrations of single-spin/single-photon entanglement in trapped ions, neutral atoms and nitrogen-vacancy centres to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. As a result of its fast optical transitions and favourable selection rules, the scheme we implement could in principle generate nearly deterministic entangled spin-photon pairs at a rate determined ultimately by the high spontaneous emission rate. Our observation constitutes a first step towards implementation of a quantum network with nodes consisting of semiconductor spin quantum bits.

The ground state magnetic moment and susceptibility of a two electron Gaussian quantum dot

NASA Astrophysics Data System (ADS)

Boda, Aalu; Chatterjee, Ashok

2018-04-01

The problem of two interacting electrons moving in a two-dimensional semiconductor quantum dot with Gaussian confinement under the influence of an external magnetic field is studied by using a method of numerical diagonalization of the Hamiltonian matrix with in the effective-mass approximation. The energy spectrum is calculated as a function of the magnetic field. We find the ground state magnetic moment and the magnetic susceptibility show zero temperature diamagnetic peaks due to exchange induced singlet-triplet oscillations. The position and the number of these peaks depend on the size of the quantum dot and also strength of the electro-electron interaction. The theory is applied to a GaAs quantum dot.

Optical devices featuring nonpolar textured semiconductor layers

DOEpatents

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Ultrafast dynamics of many-body processes and fundamental quantum mechanical phenomena in semiconductors

PubMed Central

Chemla, Daniel S.; Shah, Jagdeep

2000-01-01

The large dielectric constant and small effective mass in a semiconductor allows a description of its electronic states in terms of envelope wavefunctions whose energy, time, and length scales are mesoscopic, i.e., halfway between those of atomic and those of condensed matter systems. This property makes it possible to demonstrate and investigate many quantum mechanical, many-body, and quantum kinetic phenomena with tabletop experiments that would be nearly impossible in other systems. This, along with the ability to custom-design semiconductor nanostructures, makes semiconductors an ideal laboratory for experimental investigations. We present an overview of some of the most exciting results obtained in semiconductors in recent years using the technique of ultrafast nonlinear optical spectrocopy. These results show that Coulomb correlation plays a major role in semiconductors and makes them behave more like a strongly interacting system than like an atomic system. The results provide insights into the physics of strongly interacting systems that are relevant to other condensed matter systems, but not easily accessible in other materials. PMID:10716981

Quantum Dots

NASA Astrophysics Data System (ADS)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by Lithographic Techniques: III-V Semiconductors and Carbon: 15. Electrically controlling single spin coherence in semiconductor nanostructures Y. Dovzhenko, K. Wang, M. D. Schroer and J. R. Petta; 16. Theory of electron and nuclear spins in III-V semiconductor and carbon-based dots H. Ribeiro and G. Burkard; 17. Graphene quantum dots: transport experiments and local imaging S. Schnez, J. Guettinger, F. Molitor, C. Stampfer, M. Huefner, T. Ihn and K. Ensslin; Part VI. Single Dots for Future Telecommunications Applications: 18. Electrically operated entangled light sources based on quantum dots R. M. Stevenson, A. J. Bennett and A. J. Shields; 19. Deterministic single quantum dot cavities at telecommunication wavelengths D. Dalacu, K. Mnaymneh, J. Lapointe, G. C. Aers, P. J. Poole, R. L. Williams and S. Hughes; Index.

Quantum size effects in layered VX{sub 2} (X = S, Se) materials: Manifestation of metal to semimetal or semiconductor transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wasey, A. H. M. Abdul; Chakrabarty, Soubhik; Das, G. P., E-mail: msgpd@iacs.res.in

2015-02-14

Most of the two dimensional (2D) transition metal dichalcogenides (TMDC) are nonmagnetic in pristine form. However, 2D pristine VX{sub 2} (X = S, Se, Te) materials are found to be ferromagnetic. Using spin polarized density functional theory (DFT) calculations, we have studied the electronic, magnetic, and surface properties of this class of materials in both trigonal prismatic H- and octahedral T-phase. Our calculations reveal that they exhibit materially different properties in those two polymorphs. Most importantly, detailed investigation of electronic structure explored the quantum size effect in H-phase of these materials thereby leading to metal to semimetal (H-VS{sub 2}) or semiconductor (H-VSe{submore » 2}) transition when downsizing from bilayer to corresponding monolayer.« less

Breakdown of the Wigner-Mattis theorem in semiconductor carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Rontani, Massimo; Secchi, Andrea; Manghi, Franca

2009-03-01

The Wigner-Mattis theorem states the ground state of two bound electrons, in the absence of the magnetic field, is always a spin-singlet. We predict the opposite result --a triplet- for two electrons in a quantum dot defined in a semiconductor carbon nanotube. The claim is supported by extensive many-body calculations based on the accurate configuration interaction code DONRODRIGO (www.s3.infm.t/donrodrigo). The crux of the matter is the peculiar two-valley structure of low-energy states, which encodes a pseudo-spin degree of freedom. The spin polarization of the ground state corresponds to a pseudo-spin singlet, which is selected by the inter-valley short-range Coulomb interaction. Single-electron excitation spectra and STM wave function images may validate this scenario, as shown by our numerical simulations.

Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-10-01

We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

Approximation method for a spherical bound system in the quantum plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehramiz, A.; Sobhanian, S.; Mahmoodi, J.

2010-08-15

A system of quantum hydrodynamic equations has been used for investigating the dielectric tensor and dispersion equation of a semiconductor as a quantum magnetized plasma. Dispersion relations and their modifications due to quantum effects are derived for both longitudinal and transverse waves. The number of states and energy levels are analytically estimated for a spherical bound system embedded in a semiconductor quantum plasma. The results show that longitudinal waves decay rapidly and do not interact with the spherical bound system. The energy shifts caused by the spin-orbit interaction and the Zeeman effect are calculated.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

PubMed

Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

2016-12-01

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

A semiconductor photon-sorter

NASA Astrophysics Data System (ADS)

Bennett, A. J.; Lee, J. P.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2016-10-01

Obtaining substantial nonlinear effects at the single-photon level is a considerable challenge that holds great potential for quantum optical measurements and information processing. Of the progress that has been made in recent years one of the most promising methods is to scatter coherent light from quantum emitters, imprinting quantum correlations onto the photons. We report effective interactions between photons, controlled by a single semiconductor quantum dot that is weakly coupled to a monolithic cavity. We show that the nonlinearity of a transition modifies the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and to create polarization-correlated photons from an uncorrelated stream using a single spin. These results pave the way for semiconductor optical switches operated by single quanta of light.

Peptide-coated semiconductor quantum dots and their applications in biological imaging of single molecules in live cells and organisms

NASA Astrophysics Data System (ADS)

Pinaud, Fabien Florent

2007-12-01

A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.

Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

DOE PAGES

Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; ...

2015-03-30

Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less

Ballistic transport in nanowires through non-magnetic or magnetic cavity

NASA Astrophysics Data System (ADS)

Nonoyama, Shinji; Honma, Yukari; Ono, Miyuki; Nakamura, Atsunobu

2015-07-01

Ballistic transport phenomena through a region containing a cavity in a quasi-one-dimensional quantum nanowire are investigated. Conductance curves calculated as a function of a structural parameter show quantum interference effects on transport clearly. In a special geometry, very narrow periodic dips, which are attributable to the anti-resonance, appear on the conductance curve. The nature of the virtual bound state resulting in the anti-resonance is studied in detail. Electron conductions through a small dilute magnetic semiconductor are also investigated.

RKKY exchange interaction within the parabolic quantum-well

NASA Astrophysics Data System (ADS)

Baķ, Zygmunt

2001-03-01

Indirect magnetic exchange in a semimagnetic semiconductor heterostructure with the parabolic quantum-well barrier potential is considered. Within the analytical method, we provide the exact derivation of the spatial dependence of the RKKY exchange integral. Using the effective dimensionality approach, we show that the spectral dimensionality of the free electron (hole) system equals four. We prove, that the RKKY exchange integral shows conventional, sign reversal variation with the 2 kF period, however, the envelope function falls off in a manner characteristic to 4D systems.

Current problems in the theory of disordered semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bonch-Bruevich, V.L.

1987-05-01

This paper is an expanded version of a report read by the author at the 2nd All-Union Conference on Quantum chemistry of Solids (Riga, 1985) and at the 9th Session of Physics and Electronics (German Democratic Republic, Berlin, 1985). Three questions, which are under intensive discussion in the current literature, are examined: intermediate order in disordered semiconductors, the structure of the energy spectrum and wave functions near the mobility threshold, and the determination of the density of states in the mobility gap based on experimental data on the absorption of light.

Generalized effective-mass theory of subsurface scanning tunneling microscopy: Application to cleaved quantum dots

NASA Astrophysics Data System (ADS)

Roy, M.; Maksym, P. A.; Bruls, D.; Offermans, P.; Koenraad, P. M.

2010-11-01

An effective-mass theory of subsurface scanning tunneling microscopy (STM) is developed. Subsurface structures such as quantum dots embedded into a semiconductor slab are considered. States localized around subsurface structures match on to a tail that decays into the vacuum above the surface. It is shown that the lateral variation in this tail may be found from a surface envelope function provided that the effects of the slab surfaces and the subsurface structure decouple approximately. The surface envelope function is given by a weighted integral of a bulk envelope function that satisfies boundary conditions appropriate to the slab. The weight function decays into the slab inversely with distance and this slow decay explains the subsurface sensitivity of STM. These results enable STM images to be computed simply and economically from the bulk envelope function. The method is used to compute wave-function images of cleaved quantum dots and the computed images agree very well with experiment.

Electronegativity estimation of electronic polarizabilities of semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Keyan; Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn

2010-03-15

On the basis of the viewpoint of structure-property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity and principal quantum number. The calculated electronic polarizabilities are in good agreement with reported values in the literature. Both electronegativity and principal quantum number can effectively reflect the detailed chemical bonding behaviors of constituent atoms in these semiconductors, which determines the magnitude of their electronic polarizabilities. The present work provides a useful guide to compositionally design novel semiconductor materials, and further explore advanced electro-optic devices.

PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

NASA Astrophysics Data System (ADS)

Nötzel, Richard

2009-07-01

This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

PubMed

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Spin relaxation in semiconductor quantum rings and dots--a comparative study.

PubMed

Zipper, Elżbieta; Kurpas, Marcin; Sadowski, Janusz; Maśka, Maciej M

2011-03-23

We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.

EDITORIAL: (Nano)characterization of semiconductor materials and structures (Nano)characterization of semiconductor materials and structures

NASA Astrophysics Data System (ADS)

Bonanni, Alberta

2011-06-01

The latest impressive advancements in the epitaxial fabrication of semiconductors and in the refinement of characterization techniques have the potential to allow insight into the deep relation between materials' structural properties and their physical and chemical functionalities. Furthermore, while the comprehensive (nano)characterization of semiconductor materials and structures is becoming more and more necessary, a compendium of the currently available techniques is lacking. We are positive that an overview of the hurdles related to the specific methods, often leading to deceptive interpretations, will be most informative for the broad community working on semiconductors, and will help in shining some light onto a plethora of controversial reports found in the literature. From this perspective, with this special issue we address and highlight the challenges and misinterpretations related to complementary local (nanoscale) and more global experimental methods for the characterization of semiconductors. The six topical reviews and the three invited papers by leading experts in the specific fields collected in here are intended to provide the required broad overview on the possibilities of actual (nano)characterization methods, from the microscopy of single quantum structures, over the synchrotron-based absorption and diffraction of nano-objects, to the contentious detection of tiny magnetic signals by quantum interference and resonance techniques. We are grateful to all the authors for their valuable contributions. Moreover, I would like to thank the Editorial Board of the journal for supporting the realization of this special issue and for inviting me to serve as Guest Editor. We greatly appreciate the work of the reviewers, of the editorial staff of Semiconductor Science and Technology and of IOP Publishing. In particular, the efforts of Alice Malhador in coordinating this special issue are acknowledged.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

2018-02-01

We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

Towards Violation of Classical Inequalities using Quantum Dot Resonance Fluorescence

NASA Astrophysics Data System (ADS)

Peiris, Manoj

Self-assembled semiconductor quantum dots have attracted considerable interest recently, ranging from fundamental studies of quantum optics to advanced applications in the field of quantum information science. With their atom-like properties, quantum dot based nanophotonic devices may also substantially contribute to the development of quantum computers. This work presents experimental progress towards the understanding of light-matter interactions that occur beyond well-understood monochromatic resonant light scattering processes in semiconductor quantum dots. First, we report measurements of resonance fluorescence under bichromatic laser excitation. With the inclusion of a second laser, both first-order and second-order correlation functions are substantially altered. Under these conditions, the scattered light exhibits a rich spectrum containing many spectral features that lead to a range of nonlinear multiphoton dynamics. These observations are discussed and compared with a theoretical model. Second, we investigated the light scattered by a quantum dot in the presence of spectral filtering. By scanning the tunable filters placed in front of each detector of a Hanbury-Brown and Twiss setup and recording coincidence measurements, a \\two-photon spectrum" has been experimentally reconstructed for the first time. The two-photon spectrum contains a wealth of information about the cascaded emission involved in the scattering process, such as transitions occurring via virtual intermediate states. Our measurements also reveal that the scattered frequency-filtered light from a quantum dot violates the Cauchy-Schwarz inequality. Finally, Franson-interferometry has been performed using spectrally filtered light from quantum dot resonance fluorescence. Visibilities exceeding the classical limit were demonstrated by using a pair of folded Mach-Zehnder interferometers, paving the way for producing single time-energy entangled photon pairs that could violate Bell's inequalities.

Electron-Spin Filters Based on the Rashba Effect

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y.; Cartoixa, Xavier; McGill, Thomas C.; Moon, Jeong S.; Chow, David H.; Schulman, Joel N.; Smith, Darryl L.

2004-01-01

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

Chen, Hua-Jun; Zhu, Ka-Di

2015-01-01

In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929

Radio-frequency measurement in semiconductor quantum computation

NASA Astrophysics Data System (ADS)

Han, TianYi; Chen, MingBo; Cao, Gang; Li, HaiOu; Xiao, Ming; Guo, GuoPing

2017-05-01

Semiconductor quantum dots have attracted wide interest for the potential realization of quantum computation. To realize efficient quantum computation, fast manipulation and the corresponding readout are necessary. In the past few decades, considerable progress of quantum manipulation has been achieved experimentally. To meet the requirements of high-speed readout, radio-frequency (RF) measurement has been developed in recent years, such as RF-QPC (radio-frequency quantum point contact) and RF-DGS (radio-frequency dispersive gate sensor). Here we specifically demonstrate the principle of the radio-frequency reflectometry, then review the development and applications of RF measurement, which provides a feasible way to achieve high-bandwidth readout in quantum coherent control and also enriches the methods to study these artificial mesoscopic quantum systems. Finally, we prospect the future usage of radio-frequency reflectometry in scaling-up of the quantum computing models.

Modified transverse phonon-helicon interaction in colloids laden semiconductor plasmas due to Bohm potential and Fermi degenerate pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Aartee, E-mail: aartee.sharma08@gmail.com; Yadav, N.; Ghosh, S.

2015-07-31

A detailed study of the quantum modification of acousto-helicon wave spectra due to Bohm potential and Fermi degenerate pressure in colloids laden semiconductor plasma has been presented. We have used quantum hydrodynamic model of plasmas to arrive at most general dispersion relation in presence of magnetic field. This dispersion relation has been analyzed in three different velocity regimes and the expressions for gain constants have been obtained. From the present study it has been concluded that the quantum effect and the magnetic field significantly modify the wave characteristics particularly in high doping regime in semiconductor plasma medium in presence ofmore » colloids in it.« less

Semiconductor quantum dot-sensitized solar cells.

PubMed

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Cobalt-doped ZnO nanocrystals: quantum confinement and surface effects from ab initio methods.

PubMed

Schoenhalz, Aline L; Dalpian, Gustavo M

2013-10-14

Cobalt-doped ZnO nanocrystals were studied through ab initio methods based on the Density Functional Theory. Both quantum confinement and surface effects were explicitly taken into account. When only quantum confinement effects are considered, Co atoms interact through a superexchange mechanism, stabilizing an antiferromagnetic ground state. Usually, this is the case for high quality nanoparticles with perfect surface saturation. When the surfaces were considered, a strong hybridization between the Co atoms and surfaces was observed, strongly changing their electronic and magnetic properties. Our results indicated that the surfaces might qualitatively change the properties of impurities in semiconductor nanocrystals.

Holographic assembly of semiconductor CdSe quantum dots in polymer for volume Bragg grating structures with diffraction efficiency near 100%

NASA Astrophysics Data System (ADS)

Liu, Xiangming; Tomita, Yasuo; Oshima, Juro; Chikama, Katsumi; Matsubara, Koutatsu; Nakashima, Takuya; Kawai, Tsuyoshi

2009-12-01

We report on the fabrication of centimeter-size transmission Bragg gratings in semiconductor CdSe quantum dots dispersed 50 μm thick photopolymer films. This was done by holographic assembly of CdSe quantum dots in a photopolymerizable monomer blend. Periodic patterning of CdSe quantum dots in polymer was confirmed by a fluorescence microscope and confocal Raman imaging. The diffraction efficiency from the grating of 1 μm spacing was near 100% in the green with 0.34 vol % CdSe quantum dots, giving the refractive index modulation as large as 5.1×10-3.

Cavity-Mediated Coherent Coupling between Distant Quantum Dots

NASA Astrophysics Data System (ADS)

Nicolí, Giorgio; Ferguson, Michael Sven; Rössler, Clemens; Wolfertz, Alexander; Blatter, Gianni; Ihn, Thomas; Ensslin, Klaus; Reichl, Christian; Wegscheider, Werner; Zilberberg, Oded

2018-06-01

Scalable architectures for quantum information technologies require one to selectively couple long-distance qubits while suppressing environmental noise and cross talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated, long-distance coupling effectively minimizes undesirable direct cross talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor.

PubMed

Grandhi, G Krishnamurthy; Tomar, Renu; Viswanatha, Ranjani

2012-11-27

Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

SALUTE Grid Application using Message-Oriented Middleware

NASA Astrophysics Data System (ADS)

Atanassov, E.; Dimitrov, D. Sl.; Gurov, T.

2009-10-01

Stochastic ALgorithms for Ultra-fast Transport in sEmiconductors (SALUTE) is a grid application developed for solving various computationally intensive problems which describe ultra-fast carrier transport in semiconductors. SALUTE studies memory and quantum effects during the relaxation process due to electronphonon interaction in one-band semiconductors or quantum wires. Formally, SALUTE integrates a set of novel Monte Carlo, quasi-Monte Carlo and hybrid algorithms for solving various computationally intensive problems which describe the femtosecond relaxation process of optically excited carriers in one-band semiconductors or quantum wires. In this paper we present application-specific job submission and reservation management tool named a Job Track Server (JTS). It is developed using Message-Oriented middleware to implement robust, versatile job submission and tracing mechanism, which can be tailored to application specific failover and quality of service requirements. Experience from using the JTS for submission of SALUTE jobs is presented.

Molecular profiling of single cancer cells and clinical tissue specimens with semiconductor quantum dots

PubMed Central

Xing, Yun; Smith, Andrew M; Agrawal, Amit; Ruan, Gang; Nie, Shuming

2006-01-01

Semiconductor quantum dots (QDs) are a new class of fluorescent labels with broad applications in biomedical imaging, disease diagnostics, and molecular and cell biology. In comparison with organic dyes and fluorescent proteins, quantum dots have unique optical and electronic properties such as size-tunable light emission, improved signal brightness, resistance against photobleaching, and simultaneous excitation of multiple fluorescence colors. Recent advances have led to multifunctional nanoparticle probes that are highly bright and stable under complex in vitro and in vivo conditions. New designs involve encapsulating luminescent QDs with amphiphilic block copolymers, and linking the polymer coating to tumor-targeting ligands and drug-delivery functionalities. These improved QDs have opened new possibilities for real-time imaging and tracking of molecular targets in living cells, for multiplexed analysis of biomolecular markers in clinical tissue specimens, and for ultrasensitive imaging of malignant tumors in living animal models. In this article, we briefly discuss recent developments in bioaffinity QD probes and their applications in molecular profiling of individual cancer cells and clinical tissue specimens. PMID:17722280

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

NASA Astrophysics Data System (ADS)

Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

2018-05-01

A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

Tuneable photonic device including an array of metamaterial resonators

DOEpatents

Brener, Igal; Wanke, Michael; Benz, Alexander

2017-03-14

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

Magnetosonic solitons in semiconductor plasmas in the presence of quantum tunneling and exchange correlation effects

NASA Astrophysics Data System (ADS)

Hussain, S.; Mahmood, S.

2018-01-01

Low frequency magnetosonic wave excitations are investigated in semiconductor hole-electron plasmas. The quantum mechanical effects such as Fermi pressure, quantum tunneling, and exchange-correlation of holes and electrons in the presence of the magnetic field are considered. The two fluid quantum magnetohydrodynamic model is used to study magnetosonic wave dynamics, while electric and magnetic fields are coupled via Maxwell equations. The dispersion relation of the magnetosonic wave in electron-hole semiconductor plasma propagating in the perpendicular direction of the magnetic field is obtained, and its dispersion effects are discussed. The Korteweg-de Vries equation (KdV) for magnetosonic solitons is derived by employing the reductive perturbation method. For numerical analysis, the plasma parameters are taken from the semiconductors such as GaAs, GaSb, GaN, and InP already existing in the literature. It is found that the phase velocity of the magnetosonic wave is increased with the inclusion of exchange-correlation force in the model. The soliton dip structures of the magnetosonic wave in GaN semiconductor plasma are obtained, which satisfy the quantum plasma conditions for electron and hole fluids. The magnetosonic soliton dip structures move with speed less than the magnetosonic wave phase speed in the lab frame. The effects of exchange-correlation force in the model and variations of magnetic field intensity and electron/hole density on the magnetosonic wave dip structures are also investigated numerically for illustration.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

PubMed Central

Liu, Y.-Y.; Stehlik, J.; Gullans, M. J.; Taylor, J. M.; Petta, J. R.

2016-01-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models. PMID:28127226

Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

PubMed

Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

2015-11-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

CdSe/CdS semiconductor quantum rods as robust fluorescent probes for paraffin-embedded tissue imaging.

PubMed

Zacheo, Antonella; Quarta, Alessandra; Mangoni, Antonella; Pompa, Pier Paolo; Mastria, Rosanna; Capogrossi, Maurizio C; Rinaldi, Ross; Pellegrino, Teresa

2011-09-01

Immunofluorescence techniques on formalin fixed paraffin-embedded sections allow for the evaluation of the expression and spatial distribution of specific markers in patient tissue specimens or for monitoring the fate of labeled cells after in vivo injection. This technique suffers however from the auto-fluorescence background signal of the embedded tissue that eventually confounds the analysis. Here we show that rod-like semiconductor nanocrystals (QRs), intramuscularly injected in living mice, could be clearly detected by confocal microscopy in formalin fixed paraffin-embedded tissue sections. Despite the low amount of QRs amount injected (25 picomoles), these were clearly visible after 24 h in the muscle sections and their fluorescence signal was stronger than that of CdSe/ZnS quantum dots (QDs) similarly functionalized and in the case of QRs only, the signal lasted even after 21 days after the injection. © 2011 IEEE

Dynamics of Single-Photon Emission from Electrically Pumped Color Centers

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Agio, Mario; Fedyanin, Dmitry Yu.

2017-08-01

Low-power, high-speed, and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum-communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates; however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron and single-photon processes in semiconductors.

Sculpting oscillators with light within a nonlinear quantum fluid

NASA Astrophysics Data System (ADS)

Tosi, G.; Christmann, G.; Berloff, N. G.; Tsotsis, P.; Gao, T.; Hatzopoulos, Z.; Savvidis, P. G.; Baumberg, J. J.

2012-03-01

Seeing macroscopic quantum states directly remains an elusive goal. Particles with boson symmetry can condense into quantum fluids, producing rich physical phenomena as well as proven potential for interferometric devices. However, direct imaging of such quantum states is only fleetingly possible in high-vacuum ultracold atomic condensates, and not in superconductors. Recent condensation of solid-state polariton quasiparticles, built from mixing semiconductor excitons with microcavity photons, offers monolithic devices capable of supporting room-temperature quantum states that exhibit superfluid behaviour. Here we use microcavities on a semiconductor chip supporting two-dimensional polariton condensates to directly visualize the formation of a spontaneously oscillating quantum fluid. This system is created on the fly by injecting polaritons at two or more spatially separated pump spots. Although oscillating at tunable THz frequencies, a simple optical microscope can be used to directly image their stable archetypal quantum oscillator wavefunctions in real space. The self-repulsion of polaritons provides a solid-state quasiparticle that is so nonlinear as to modify its own potential. Interference in time and space reveals the condensate wavepackets arise from non-equilibrium solitons. Control of such polariton-condensate wavepackets demonstrates great potential for integrated semiconductor-based condensate devices.

Direct photonic coupling of a semiconductor quantum dot and a trapped ion.

PubMed

Meyer, H M; Stockill, R; Steiner, M; Le Gall, C; Matthiesen, C; Clarke, E; Ludwig, A; Reichel, J; Atatüre, M; Köhl, M

2015-03-27

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb^{+} ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σ_{z} projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Optical phonon effect in quasi-one-dimensional semiconductor quantum wires: Band-gap renormalization

NASA Astrophysics Data System (ADS)

Dan, Nguyen Trung; Bechstedt, F.

1996-02-01

We present theoretical studies of dynamical screening in quasi-one-dimensional semiconductor quantum wires including electron-electron and electron-LO-phonon interactions. Within the random-phase approximation we obtain analytical expressions for screened interaction potentials. These expressions can be used to calculate the band-gap renormalization of quantum wires, which depends on the free-carrier density and temperature. We find that the optical phonon interaction effect plays a significant role in band-gap renormalization of quantum wires. The numerical results are compared with some recent experiment measurements as well as available theories.

Emission polarization control in semiconductor quantum dots coupled to a photonic crystal microcavity.

PubMed

Gallardo, E; Martínez, L J; Nowak, A K; van der Meulen, H P; Calleja, J M; Tejedor, C; Prieto, I; Granados, D; Taboada, A G; García, J M; Postigo, P A

2010-06-07

We study the optical emission of single semiconductor quantum dots weakly coupled to a photonic-crystal micro-cavity. The linearly polarized emission of a selected quantum dot changes continuously its polarization angle, from nearly perpendicular to the cavity mode polarization at large detuning, to parallel at zero detuning, and reversing sign for negative detuning. The linear polarization rotation is qualitatively interpreted in terms of the detuning dependent mixing of the quantum dot and cavity states. The present result is relevant to achieve continuous control of the linear polarization in single photon emitters.

Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots

NASA Astrophysics Data System (ADS)

Hasanirokh, K.; Asgari, A.

2018-07-01

In this paper, we propose a quantum dot (QD) based white light emitting diode (WLED) structure to study theoretically the material gain and quantum efficiency of the system. We consider the spherical QDs with a II-VI semiconductor core (CdS) that covered with a wider band gap semiconductor acting as a shell (ZnS). In order to generate white light spectrum, we use layers with different dot size that can emit blue, green and red colors. The blue emission originating from CdS core combines to green/orange components originating from ZnS shell and creates an efficiency white light emission. To model this device, at first, we solve Schrödinger and Poisson equations self consistently and obtain eigen energies and wave functions. Then, we calculate the optical gain and internal quantum efficiency (IQE) of a CdS/ZnS LED sample. We investigate the structural parameter effects on the optical properties of the WLED. The numerical results show that the gain profile and IQE curves depend strongly on the structural parameters such as dot size, carrier density and volume scaling parameter. The gain profile becomes higher and wider with increasing the core radius while it becomes less and narrower with increasing the shell thickness. Furthermore, it is found that the volume scaling parameter can manage the system quantum efficiency.

Monte Carlo simulations of quantum dot solar concentrators: ray tracing based on fluorescence mapping

NASA Astrophysics Data System (ADS)

Schuler, A.; Kostro, A.; Huriet, B.; Galande, C.; Scartezzini, J.-L.

2008-08-01

One promising application of semiconductor nanostructures in the field of photovoltaics might be quantum dot solar concentrators. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the novel planar photoluminescent concentrators, reliable computer simulations are needed. A computer code for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent reemission. The software allows importing measured or theoretical absorption/reemission spectra describing the photoluminescent properties of the quantum dots. Hereby the properties of photoluminescent reemission are described by a set of emission spectra depending on the energy of the incoming photon, allowing to simulate the photoluminescent emission using the inverse function method. By our simulations, the importance of two main factors is revealed, an emission spectrum matched to the spectral efficiency curve of the photovoltaic cell, and a large Stokes shift, which is advantageous for the lateral energy transport. No significant energy losses are implied when the quantum dots are contained within a nanocomposite coating instead of being dispersed in the entire volume of the pane. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, the simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize photoluminescent emission frequencies, optical densities, and pane dimensions.

Synthesis and Characterization of Quantum Dots: A Case Study Using PbS

ERIC Educational Resources Information Center

Pan, Yi; Li, Yue Ru; Zhao, Yu; Akins, Daniel L.

2015-01-01

A research project for senior undergraduates of chemistry has been developed to introduce syntheses of a series of monodispersed semiconductor PbS quantum dots (QDs) and their characterization methodologies. In this paper, we report the preparation of monodispersed semiconductor PbS QDs with sizes smaller than the exciton Bohr radius using a…

Electric currents induced by twisted light in Quantum Rings.

PubMed

Quinteiro, G F; Berakdar, J

2009-10-26

We theoretically investigate the generation of electric currents in quantum rings resulting from the optical excitation with twisted light. Our model describes the kinetics of electrons in a two-band model of a semiconductor-based mesoscopic quantum ring coupled to light having orbital angular momentum (twisted light). We find the analytical solution, which exhibits a "circular" photon-drag effect and an induced magnetization, suggesting that this system is the circular analog of that of a bulk semiconductor excited by plane waves. For realistic values of the electric field and material parameters, the computed electric current can be as large as microA; from an applied perspective, this opens new possibilities to the optical control of the magnetization in semiconductors.

Self-assembling complexes of quantum dots and scFv antibodies for cancer cell targeting and imaging.

PubMed

Zdobnova, Tatiana A; Stremovskiy, Oleg A; Lebedenko, Ekaterina N; Deyev, Sergey M

2012-01-01

Semiconductor quantum dots represent a novel class of fluorophores with unique physical and chemical properties which could enable a remarkable broadening of the current applications of fluorescent imaging and optical diagnostics. Complexes of quantum dots and antibodies are promising visualising agents for fluorescent detection of selective biomarkers overexpressed in tumor tissues. Here we describe the construction of self-assembling fluorescent complexes of quantum dots and anti-HER1 or anti-HER2/neu scFv antibodies and their interactions with cultured tumor cells. A binding strategy based on a very specific non-covalent interaction between two proteins, barnase and barstar, was used to connect quantum dots and the targeting antibodies. Such a strategy allows combining the targeting and visualization functions simply by varying the corresponding modules of the fluorescent complex.

Self-Assembling Complexes of Quantum Dots and scFv Antibodies for Cancer Cell Targeting and Imaging

PubMed Central

Zdobnova, Tatiana A.; Stremovskiy, Oleg A.; Lebedenko, Ekaterina N.; Deyev, Sergey M.

2012-01-01

Semiconductor quantum dots represent a novel class of fluorophores with unique physical and chemical properties which could enable a remarkable broadening of the current applications of fluorescent imaging and optical diagnostics. Complexes of quantum dots and antibodies are promising visualising agents for fluorescent detection of selective biomarkers overexpressed in tumor tissues. Here we describe the construction of self-assembling fluorescent complexes of quantum dots and anti-HER1 or anti-HER2/neu scFv antibodies and their interactions with cultured tumor cells. A binding strategy based on a very specific non-covalent interaction between two proteins, barnase and barstar, was used to connect quantum dots and the targeting antibodies. Such a strategy allows combining the targeting and visualization functions simply by varying the corresponding modules of the fluorescent complex. PMID:23133578

Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

NASA Astrophysics Data System (ADS)

Geffe, Chernet Amente

2018-03-01

This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

Size dependence in tunneling spectra of PbSe quantum-dot arrays.

PubMed

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

Andreev molecules in semiconductor nanowire double quantum dots.

PubMed

Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

2017-09-19

Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

Dynamics of Photoexcited State of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Trivedi, Dhara J.

In this thesis, non-adiabatic molecular dynamics (NAMD) of excited states in semiconductor quantum dots are investigated. Nanoscale systems provide important opportunities for theory and computation for research because the experimental tools often provide an incomplete picture of the structure and/or function of nanomaterials, and theory can often fill in missing features crucial in understanding what is being measured. The simulation of NAMD is an indispensable tool for understanding complex ultrafast photoinduced processes such as charge and energy transfer, thermal relaxation, and charge recombination. Based on the state-of-the-art ab initio approaches in both the energy and time domains, the thesis presents a comprehensive discussion of the dynamical processes in quantum dots, ranging from the initial photon absorption to the final emission. We investigate the energy relaxation and transfer rates in pure and surface passivated quantum dots of different sizes. The study establishes the fundamental mechanisms of the electron and hole relaxation processes with and without hole traps. We develop and implement more accurate and efficient methods for NAMD. These methods are advantageous over the traditional ones when one encounters classically forbidden transitions. We also explore the effect of decoherence and non-adiabatic couplings on the dynamics. The results indicate significant influence on the accuracy and related computational cost of the simulated dynamics.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

PubMed

Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

2017-08-02

Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

PubMed Central

2011-01-01

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiaohong; Xu, Hongmei; Xu, Fuchun

A technique for achieving square-shape quantum wells (QWs) against the intrinsic polar discontinuity and interfacial diffusion through self-compensated pair interlayers is reported. Ultrathin low-and-high % pair interlayers that have diffusion-blocking and self-compensation capacities is proposed to resist the elemental diffusion at nanointerfaces and to grow the theoretically described abrupt rectangular AlGaN/GaN superlattices by metal-organic chemical vapor deposition. Light emission efficiency in such nanostructures is effectively enhanced and the quantum-confined Stark effect could be partially suppressed. This concept could effectively improve the quality of ultrathin QWs in functional nanostructures with other semiconductors or through other growth methods.

Diamagnetic excitons and exciton magnetopolaritons in semiconductors

NASA Astrophysics Data System (ADS)

Seisyan, R. P.

2012-05-01

Interband magneto-absorption in semiconductors is reviewed in the light of the diamagnetic exciton (DE) concept. Beginning with a proof of the exciton nature of oscillating-magnetoabsorption (the DE discovery), development of the DE concept is discussed, including definition of observation conditions, quasi-cubic approximation for hexagonal crystals, quantum-well effects in artificial structures, and comprehension of an important role of the DE polariton. The successful use of the concept application to a broad range of substances is reviewed, namely quasi-Landau magnetic spectroscopy of the ‘Rydberg’ exciton states in cubic semiconductors such as InP and GaAs and in hexagonal ones such as CdSe, the proof of exciton participation in the formation of optical spectra in narrow-gap semiconductors such as InSb, InAs, and, especially, PbTe, observation of DE spectra in semiconductor solid solutions like InGaAs. The most fundamental findings of the DE spectroscopy for various quantum systems are brought together, including the ‘Coulomb-well’ effect, fine structure of discrete oscillatory states in the InGaAs/GaAs multiple quantum wells, the magneto-optical observation of above-barrier exciton. Prospects of the DE physics in ultrahigh magnetic field are discussed, including technological creation of controllable low-dimensional objects with extreme oscillator strengths, formation of magneto-quantum exciton polymer, and even modelling of the hydrogen behaviour in the atmosphere of a neutron star.

Charge dissipative dielectric for cryogenic devices

NASA Technical Reports Server (NTRS)

Cantor, Robin Harold (Inventor); Hall, John Addison (Inventor)

2007-01-01

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Experimental researches on quantum transport in semiconductor two-dimensional electron systems

PubMed Central

Kawaji, Shinji

2008-01-01

The author reviews contribution of Gakushuin University group to the progress of the quantum transport in semiconductor two-dimensional electron systems (2DES) for forty years from the birth of the 2DES in middle of the 1960s till the finding of temperature dependent collapse of the quantized Hall resistance in the beginning of this century. PMID:18941299

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots.

PubMed

Baranov, Pavel G; Orlinskii, Sergei B; de Mello Donegá, Celso; Schmidt, Jan

2010-10-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the (67)Zn nuclear spins and by the hyperfine interaction of the (7)Li, (23)Na and (27)Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)(2) capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the (67)Zn nuclear spins in the core of ZnO QDs and of the (1)H nuclear spins in the Zn(OH)(2) capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques.

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots

PubMed Central

Baranov, Pavel G.; de Mello Donegá, Celso; Schmidt, Jan

2010-01-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the 67Zn nuclear spins and by the hyperfine interaction of the 7Li, 23Na and 27Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)2 capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the 67Zn nuclear spins in the core of ZnO QDs and of the 1H nuclear spins in the Zn(OH)2 capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques. PMID:20936163

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

PubMed

Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

2013-08-15

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

Recent advances in biocompatible semiconductor nanocrystals for immunobiological applications.

PubMed

Nanda, Sitansu Sekhar; Kim, Min Jik; Kim, Kwangmeyung; Papaefthymiou, Georgia C; Selvan, Subramanian Tamil; Yi, Dong Kee

2017-11-01

Quantum confinement in inorganic semiconductor nanocrystals produces brightly luminescent nanoparticles endowed with unique photo-physical properties, such as tunable optical properties. These have found widespread applications in nanotechnology. The ability to render such nanostructures biocompatible, while maintaining their tunable radiation in the visible range of the electromagnetic spectrum, renders them appropriate for bio-applications. Promising in vitro and in vivo diagnostic applications have been demonstrated, such as fluorescence-based detection of biological interactions, single molecule tracking, multiplexing and immunoassaying. In particular, these fluorescent inorganic semiconductor nanocrystals, generally known as quantum dots, have the potential of remarkable immunobiological applications. This review focuses on the current status of biocompatible quantum dots and their applications in immunobiology - immunosensing, immunofluorescent imaging and immunotherapy. Copyright © 2017 Elsevier B.V. All rights reserved.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

NASA Astrophysics Data System (ADS)

Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

2017-11-01

The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

Tailoring Magnetism in Bulk Semiconductors and Quantum Dots

NASA Astrophysics Data System (ADS)

Zutic, Igor

2008-03-01

Carrier-mediated magnetism in semiconductors shows important and potentially useful differences from their metallic counterparts [1]. For example, in magnetically doped semiconductors the change in carrier density induced by light or bias could be sufficient to turn the ferromagnetism on and off. However, there remain many important challenges to fully understand these materials. Our density functional theory study of Mn- doped II-IV-V2 chalcopyrites [2] reveals that variation of magnetic properties across 64 different materials cannot be explained by the dominant models of ferromagnetism in semiconductors. We observe no qualitative similarity with the suggested Curie temperature scaling with the inverse cube of the lattice constant [3]. In contrast to most of the theoretical studies, we explicitly include the temperature dependence of the carrier density and propose a model which permits analysis of the thermodynamic stability of the competing magnetic states [4]. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor and discuss the experimental support for this prediction. An increasing temperature leads to an increased carrier density such that the enhanced coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised. We also use the real space finite-temperature local spin density approximation to examine magnetically doped quantum dots in which the interplay of quantum confinement and strong Coulomb interactions can lead to novel possibilities to tailor magnetism. We reveal that, even at a fixed number of carriers, the gate induced changes in the screening [5] or deviations from isotropic quantum confinement [6] could allow for a reversible control of magnetism and switching between zero and finite magnetization. Such magnetic quantum dots could also provide versatile voltage-control of spin currents and spin filtering. The work done in collaboration with S. C. Erwin (Naval Research Lab), A. G. Petukhov (South Dakota School of Mines and Technology), R. M. Abolfath (SUNY Buffalo) and P. Hawrylak (NRC, Canada). [1] T. Jungwirth et al., Rev. Mod. Phys 78, 1311 (2006); I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004). [2] S. C. Erwin and I. Zutic, Nature Mater. 3, 410 (2004). [3] T. Dietl et al., Science 287, 1019 (2000). [4] A. G. Petukhov, I. Zutic, and S. Erwin, Phys. Rev. Lett. 99, 257202 (2007) [5] R. M. Abolfath, P. Hawrylak, and I. Zutic, Phys. Rev. Lett. 98, 207203 (2007); New J. Phys. 9, 353 (2007). [6] R. M. Abolfath, A. G. Petukhov, and I. Zutic, arXiv:0707.2805.

Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

DOE PAGES

Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

2016-06-08

The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters ( including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring themore » underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. Lastly, this study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen vacancy centres that use these freestanding hybrid nanostructures as building blocks.« less

Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

2016-06-01

The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

QM/QM approach to model energy disorder in amorphous organic semiconductors.

PubMed

Friederich, Pascal; Meded, Velimir; Symalla, Franz; Elstner, Marcus; Wenzel, Wolfgang

2015-02-10

It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

Decoherence of spin states induced by Rashba coupling for an electron confined to a semiconductor quantum dot in the presence of a magnetic field

NASA Astrophysics Data System (ADS)

Poszwa, A.

2018-05-01

We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.

Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas

2009-08-01

The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.

Theory of few photon dynamics in light emitting quantum dot devices

NASA Astrophysics Data System (ADS)

Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

2009-10-01

We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

PubMed

Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

2017-10-10

We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

PREFACE: Proceedings of the First Workshop of the EU RT Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (Gregynog, Wales, UK, 28--31 March 2003)

NASA Astrophysics Data System (ADS)

Ivanov, Alexei L.

2004-09-01

The EU Research Training Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (HPRN-CT-2002-00298) comprises seven teams from across Europe: Cambridge, Cardiff, Dortmund, Heraklion, Grenoble, Lund and Paderborn (for details see the Network website http://www.astro.cardiff.ac.uk/research/PMPnetwork/index.html). The first workshop of the Network was held at Gregynog Hall, a conference centre in the beautiful countryside of mid-Wales. There were 44 participants who attended the meeting (7 from France, 2 from Japan, 3 from Germany, 1 from Greece, 2 from Russia, 3 from Sweden, 23 from UK and 3 from USA). Of these, 57% were students and young postdoctoral research associates. The talks presented at the meeting were mainly devoted to linear and nonlinear optics of semiconductor nanostructures. Thus the review and research papers included in this special issue of Journal of Physics: Condensed Matter deal with the exciton-mediated optical phenomena in semiconductor quantum wires, quantum wells, planar and spherical microcavities and self-assembled quantum dots. The specific topics covered by the proceedings are exciton-mediated optics, including lasing, of semiconductor quantum wires Bose-Einstein condensation of excitons and microcavity polaritons diffusion, thermalization and photoluminescence of free carriers and excitons in GaAs coupled quantum wells polaritons in semiconductor microcavities exciton-mediated optics of semiconductor photonic dots optical nonlinearities of biexciton waves optics of self-assembled quantum dots photosensitive metal oxides films On the first day of the workshop, a special session on presentation skills, lead by Mike Edmunds, was organized for the young researchers. The meeting concluded with a round-table discussion at which key questions on research, organization and management of the Network were identified and discussed. The second workshop of the Network, organized and chaired by George Kiriakidis, took place at Hersonissos (Crete, Greece) in October 2003. The forthcoming third workshop, organized by Detlef Schikora and Ulrike Woggon, will be held in Paderborn (conference part) and Dortmund (training part) from 4 October 4 through 7 October 2004 (for details visit the Network website). Finally, I would like to thank my colleagues, Celestino Creatore, Nikolay Nikolaev, Lois Smallwood and Andrew Smith, for their help with preparation of the Proceedings.

Building devices from colloidal quantum dots.

PubMed

Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

2016-08-26

The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

High-performance semiconductor quantum-dot single-photon sources

NASA Astrophysics Data System (ADS)

Senellart, Pascale; Solomon, Glenn; White, Andrew

2017-11-01

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Yuri Victorovich

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two particle interaction potential equivalent to the static screening approximation. The resulting asymytotic closure and quantum kinetic Boltzmann equation are derived in a self consistent manner without resorting to a priori statistical hypotheses or cumulant discard assumptions. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy across momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We explore these solutions by using differential approximation to collision integral. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers. We show that semiconductor laser output efficiency can be improved by exciting these finite flux solutions. Numerical simulations of the semiconductor Maxwell Bloch equations support the claim.

The effect of nanoparticle degradation on amphiphilic polymer-coated quantum dot toxicity: the importance of particle functionality assessment in toxicology [corrected].

PubMed

Soenen, Stefaan J; Montenegro, José-Maria; Abdelmonem, Abuelmagd M; Manshian, Bella B; Doak, Shareen H; Parak, Wolfgang J; De Smedt, Stefaan C; Braeckmans, Kevin

2014-02-01

Colloidal semiconductor nanoparticles (quantum dots) have attracted a lot of interest in technological and biomedical research, given their potent fluorescent properties. However, the use of heavy-metal-containing nanoparticles remains an issue of debate. The possible toxic effects of quantum dots remain a hot research topic and several questions such as possible intracellular degradation of quantum dots and the effect thereof on both cell viability and particle functionality remain unresolved. In the present work, amphiphilic polymer [corrected] coated CdSe/ZnS quantum dots were synthesized and characterized, after which their effects on cultured cells were evaluated using a multiparametric setup. The data reveal that the quantum dots are taken up through endocytosis and when exposed to the low pH of the endosomal structures, they partially degrade and release cadmium ions, which lowers their fluorescence intensity and augments particle toxicity. Using the multiparametric method, the quantum dots were evaluated at non-toxic doses in terms of their ability to visualize labeled cells for longer time periods. The data revealed that comparing different particles in terms of their applied dose is challenging, likely due to difficulties in obtaining accurate nanoparticle concentrations, but evaluating particle toxicity in terms of their biological functionality enables an easy and straightforward comparison. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A CMOS silicon spin qubit

PubMed Central

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.

2016-01-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. PMID:27882926

Dopant atoms as quantum components in silicon nanoscale devices

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

A CMOS silicon spin qubit

NASA Astrophysics Data System (ADS)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A CMOS silicon spin qubit.

PubMed

Maurand, R; Jehl, X; Kotekar-Patil, D; Corna, A; Bohuslavskyi, H; Laviéville, R; Hutin, L; Barraud, S; Vinet, M; Sanquer, M; De Franceschi, S

2016-11-24

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Carrier-envelope phase-controlled quantum interference of injected photocurrents in semiconductors.

PubMed

Fortier, T M; Roos, P A; Jones, D J; Cundiff, S T; Bhat, R D R; Sipe, J E

2004-04-09

We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth), enabling solid-state detection of carrier-envelope phase shifts of a Ti:sapphire oscillator.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Tunable multifunctional topological insulators in ternary Heusler and related compounds

NASA Astrophysics Data System (ADS)

Felser, Claudia

2011-03-01

Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe. The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1b structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin--orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantumwell structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi) to magnetism (for example GdPtBi) and heavy fermion behaviour (for example YbPtBi). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors. Heusler compounds are similar to a stuffed diamond, correspondingly, it should be possible to find the ``high Z'' equivalent of graphene in a graphite-like structure with 18 valence electrons and with inverted bands. Indeed the ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. These materials have a gap at the Fermi energy and are therefore candidates for 3D-topological insulators. Additionally they are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

A Quantum Dot with Spin-Orbit Interaction--Analytical Solution

ERIC Educational Resources Information Center

Basu, B.; Roy, B.

2009-01-01

The practical applicability of a semiconductor quantum dot with spin-orbit interaction gives an impetus to study analytical solutions to one- and two-electron quantum dots with or without a magnetic field.

Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinclair, Michael B.; Fan, Hongyou; Brener, Igal

2015-09-01

QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. Duringmore » the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.« less

Eshelby problem of polygonal inclusions in anisotropic piezoelectric full- and half-planes

NASA Astrophysics Data System (ADS)

Pan, E.

2004-03-01

This paper presents an exact closed-form solution for the Eshelby problem of polygonal inclusion in anisotropic piezoelectric full- and half-planes. Based on the equivalent body-force concept of eigenstrain, the induced elastic and piezoelectric fields are first expressed in terms of line integral on the boundary of the inclusion with the integrand being the Green's function. Using the recently derived exact closed-form line-source Green's function, the line integral is then carried out analytically, with the final expression involving only elementary functions. The exact closed-form solution is applied to a square-shaped quantum wire within semiconductor GaAs full- and half-planes, with results clearly showing the importance of material orientation and piezoelectric coupling. While the elastic and piezoelectric fields within the square-shaped quantum wire could serve as benchmarks to other numerical methods, the exact closed-form solution should be useful to the analysis of nanoscale quantum-wire structures where large strain and electric fields could be induced by the misfit strain.

Spectra, current flow, and wave-function morphology in a model PT -symmetric quantum dot with external interactions

NASA Astrophysics Data System (ADS)

Tellander, Felix; Berggren, Karl-Fredrik

2017-04-01

In this paper we use numerical simulations to study a two-dimensional (2D) quantum dot (cavity) with two leads for passing currents (electrons, photons, etc.) through the system. By introducing an imaginary potential in each lead the system is made symmetric under parity-time inversion (PT symmetric). This system is experimentally realizable in the form of, e.g., quantum dots in low-dimensional semiconductors, optical and electromagnetic cavities, and other classical wave analogs. The computational model introduced here for studying spectra, exceptional points (EPs), wave-function symmetries and morphology, and current flow includes thousands of interacting states. This supplements previous analytic studies of few interacting states by providing more detail and higher resolution. The Hamiltonian describing the system is non-Hermitian; thus, the eigenvalues are, in general, complex. The structure of the wave functions and probability current densities are studied in detail at and in between EPs. The statistics for EPs is evaluated, and reasons for a gradual dynamical crossover are identified.

Scanning Hall probe microscopy of a diluted magnetic semiconductor

NASA Astrophysics Data System (ADS)

Kweon, Seongsoo; Samarth, Nitin; de Lozanne, Alex

2009-05-01

We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga0.94Mn0.06As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 μm wide and fairly stable with temperature. Magnetic clusters are observed above TC, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes

NASA Astrophysics Data System (ADS)

Armin, Ardalan; Jansen-van Vuuren, Ross D.; Kopidakis, Nikos; Burn, Paul L.; Meredith, Paul

2015-02-01

Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is material-agnostic and applicable to other disordered and polycrystalline semiconductors.

Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

DOE PAGES

Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; ...

2015-02-01

Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (inputmore » filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.« less

Hybrid quantum-classical modeling of quantum dot devices

NASA Astrophysics Data System (ADS)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system.

PubMed

Ko, Heasin; Choi, Byung-Seok; Choe, Joong-Seon; Kim, Kap-Joong; Kim, Jong-Hoi; Youn, Chun Ju

2017-08-21

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.

Coherent electron{endash}hole correlations in quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joensson, L.; Steiner, M.M.; Wilkins, J.W.

1997-03-01

Using numerical time propagation of the electron{endash}hole wave function, we demonstrate how various coherent correlation effects can be observed by laser excitation of a nanoscale semiconductor quantum dot. The lowest-lying states of an electron{endash}hole pair, when appropriately excited by a laser pulse, give rise to charge oscillations that are manifested by beatings in the optical or intraband polarizations. A GaAs 5{times}25{times}25 nm{sup 3} dot in the effective-mass approximation, including the screened Coulomb interaction between the electron and a heavy or light hole, is simulated. {copyright} {ital 1997 American Institute of Physics.}

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

MURI Center for Photonic Quantum Information Systems

DTIC Science & Technology

2009-10-16

conversion; solid- state quantum gates based on quantum dots in semiconductors and on NV centers in diamond; quantum memories using optical storage...of our high-speed quantum cryptography systems, and also by continuing to work on quantum information encoding into transverse spatial modes. 14...make use of cavity QED effects for quantum information processing, the quantum dot needs to be addressed coherently . We have probed the QD-cavity

Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

PubMed

de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

2016-11-18

There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10 -4 cm 2 V -1 s -1 , these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho; Yu, Bong-Ahn

2015-03-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review

NASA Astrophysics Data System (ADS)

Huber, Daniel; Reindl, Marcus; Aberl, Johannes; Rastelli, Armando; Trotta, Rinaldo

2018-07-01

More than 80 years have passed since the first publication on entangled quantum states. Over this period, the concept of spookily interacting quantum states became an emerging field of science. After various experiments proving the existence of such non-classical states, visionary ideas were put forward to exploit entanglement in quantum information science and technology. These novel concepts have not yet come out of the experimental stage, mostly because of the lack of suitable, deterministic sources of entangled quantum states. Among many systems under investigation, semiconductor quantum dots are particularly appealing emitters of on-demand, single polarization-entangled photon pairs. While it was originally believed that quantum dots must exhibit a limited degree of entanglement related to decoherence effects typical of the solid-state, recent studies have invalidated this preconception. We review the relevant experiments which have led to these important discoveries and discuss the remaining challenges for the anticipated quantum technologies.

Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

DTIC Science & Technology

2014-11-07

Theoretical studies of spin- photon entangled complementarity”. Mr. Anderson Hayes in physics finished B.S. degree in May 2013 with a capstone thesis entitled...working on “Semiconductor quantum dots and photon entanglement ”. Mr. Quinn Allen Hailes, undergraduate student in physics completed B.S. degree in...great interests for the Department of Defense’s (DoD) photonic applications. Our research focused on developing and characterizing advanced optical

Quantum Dots Based Rad-Hard Computing and Sensors

NASA Technical Reports Server (NTRS)

Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

2001-01-01

Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

Single nickel-related defects in molecular-sized nanodiamonds for multicolor bioimaging: an ab initio study.

PubMed

Thiering, Gergő; Londero, Elisa; Gali, Adam

2014-10-21

Fluorescent nanodiamonds constitute an outstanding alternative to semiconductor quantum dots and dye molecules for in vivo biomarker applications, where the fluorescence comes from optically active point defects acting as color centers in the nanodiamonds. For practical purposes, these color centers should be photostable as a function of the laser power or the surface termination of nanodiamonds. Furthermore, they should exhibit a sharp and nearly temperature-independent zero-phonon line. In this study, we show by hybrid density functional theory calculations that nickel doped nanodiamonds exhibit the desired properties, thus opening the avenue to practical applications. In particular, harnessing the strong quantum confinement effect in molecule-sized nanodiamonds is very promising for achieving multicolor imaging by single nickel-related defects.

Single nickel-related defects in molecular-sized nanodiamonds for multicolor bioimaging: an ab initio study

NASA Astrophysics Data System (ADS)

Thiering, Gergő; Londero, Elisa; Gali, Adam

2014-09-01

Fluorescent nanodiamonds constitute an outstanding alternative to semiconductor quantum dots and dye molecules for in vivo biomarker applications, where the fluorescence comes from optically active point defects acting as color centers in the nanodiamonds. For practical purposes, these color centers should be photostable as a function of the laser power or the surface termination of nanodiamonds. Furthermore, they should exhibit a sharp and nearly temperature-independent zero-phonon line. In this study, we show by hybrid density functional theory calculations that nickel doped nanodiamonds exhibit the desired properties, thus opening the avenue to practical applications. In particular, harnessing the strong quantum confinement effect in molecule-sized nanodiamonds is very promising for achieving multicolor imaging by single nickel-related defects.

An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Chen, Y. C.; Shih, H. Y.; Chen, J. Y.; Tan, W. J.; Chen, Y. F.

2013-07-01

An optically detectable gas sensor based on the high surface sensitivity of functionalized polyethylenimine/starch In0.15Ga0.85N/GaN strained semiconductor multiple quantum wells (MQWs) has been developed. Due to the excellent piezoelectricity of the MQWs, the change of surface charges caused by chemical interaction can introduce a strain and induce an internal field. In turn, it tilts the energy levels of the MQWs and modifies the optical properties. Through the measurement of the changes in photoluminescence as well as Raman scattering spectra under different concentrations of carbon dioxide gas, we demonstrate the feasibility and high sensitivity of the sensors derived from our methodology.

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

PubMed

De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2012-11-15

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

PubMed

Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

2016-01-13

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.

Field-emission from quantum-dot-in-perovskite solids

PubMed Central

García de Arquer, F. Pelayo; Gong, Xiwen; Sabatini, Randy P.; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R.; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

2017-01-01

Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 1012 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission. PMID:28337981

Luminescent Quantum Dots as Ultrasensitive Biological Labels

NASA Astrophysics Data System (ADS)

Nie, Shuming

2000-03-01

Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu, E-mail: iyun@yonsei.ac.kr

2014-11-07

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulationmore » results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.« less

Gate-controlled electromechanical backaction induced by a quantum dot

NASA Astrophysics Data System (ADS)

Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

2016-04-01

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

PubMed

Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

2014-07-03

The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

NASA Astrophysics Data System (ADS)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Quantum dynamical simulation of photoinduced electron transfer processes in dye-semiconductor systems: theory and application to coumarin 343 at TiO₂.

PubMed

Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael

2015-04-10

A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Ma, Nan; Jena, Debdeep

2015-03-01

In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.

Non-equilibrium Green's function calculation of AlGaAs-well-based and GaSb-based terahertz quantum cascade laser structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yasuda, H., E-mail: yasuda@nict.go.jp; Hosako, I.

2015-03-16

We investigate the performance of terahertz quantum cascade lasers (THz-QCLs) based on Al{sub x}Ga{sub 1−x}As/Al{sub y}Ga{sub 1−y}As and GaSb/AlGaSb material systems to realize higher-temperature operation. Calculations with the non-equilibrium Green's function method reveal that the AlGaAs-well-based THz-QCLs do not show improved performance, mainly because of alloy scattering in the ternary compound semiconductor. The GaSb-based THz-QCLs offer clear advantages over GaAs-based THz-QCLs. Weaker longitudinal optical phonon–electron interaction in GaSb produces higher peaks in the spectral functions of the lasing levels, which enables more electrons to be accumulated in the upper lasing level.

Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

DOE PAGES

Velizhanin, Kirill A.

2016-05-25

We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, asmore » such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.« less

Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D. (Inventor); Bandara, Sumith V. (Inventor); Liu, John K. (Inventor)

2006-01-01

Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

Surface plasmon oscillations in a semi-bounded semiconductor plasma

NASA Astrophysics Data System (ADS)

M, SHAHMANSOURI; A, P. MISRA

2018-02-01

We study the dispersion properties of surface plasmon (SP) oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange (CE) force associated with the spin polarization of electrons and holes as well as the effects of the Fermi degenerate pressure and the quantum Bohm potential. Starting from a quantum hydrodynamic model coupled to the Poisson equation, we derive the general dispersion relation for surface plasma waves. Previous results in this context are recovered. The dispersion properties of the surface waves are analyzed in some particular cases of interest and the relative influence of the quantum forces on these waves are also studied for a nano-sized GaAs semiconductor plasma. It is found that the CE effects significantly modify the behaviors of the SP waves. The present results are applicable to understand the propagation characteristics of surface waves in solid density plasmas.

Electrical control of single hole spins in nanowire quantum dots.

PubMed

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Extending density functional embedding theory for covalently bonded systems.

PubMed

Yu, Kuang; Carter, Emily A

2017-12-19

Quantum embedding theory aims to provide an efficient solution to obtain accurate electronic energies for systems too large for full-scale, high-level quantum calculations. It adopts a hierarchical approach that divides the total system into a small embedded region and a larger environment, using different levels of theory to describe each part. Previously, we developed a density-based quantum embedding theory called density functional embedding theory (DFET), which achieved considerable success in metals and semiconductors. In this work, we extend DFET into a density-matrix-based nonlocal form, enabling DFET to study the stronger quantum couplings between covalently bonded subsystems. We name this theory density-matrix functional embedding theory (DMFET), and we demonstrate its performance in several test examples that resemble various real applications in both chemistry and biochemistry. DMFET gives excellent results in all cases tested thus far, including predicting isomerization energies, proton transfer energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital gaps for local chromophores. Here, we show that DMFET systematically improves the quality of the results compared with the widely used state-of-the-art methods, such as the simple capped cluster model or the widely used ONIOM method.

Experimental observation of Fano effect in Ag nanoparticle-CdTe quantum dot hybrid system

NASA Astrophysics Data System (ADS)

Gurung, Sabina; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Chari, Rama

2018-04-01

We have experimentally measured the optical properties of Ag nanoparticle-CdTe quantum dot hybrid system and compared it with that of bare CdTe quantum dot colloid. It has been shown that the photoluminescence line shape of CdTe quantum dots becomes asymmetric in presence of Ag nanoparticles. The observed changes in the PL spectrum closely match the expected changes in the line shape due to Fano interaction between discrete level and continuum levels. Our experiment shows that a very small fraction of metal nanoparticles in the metal-semiconductor hybrid is sufficient to induce such changes in line shape which is in contrary to the earlier reported theoretical prediction on metal-semiconductor hybrid.

Dissipative transport in superlattices within the Wigner function formalism

DOE PAGES

Jonasson, O.; Knezevic, I.

2015-07-30

Here, we employ the Wigner function formalism to simulate partially coherent, dissipative electron transport in biased semiconductor superlattices. We introduce a model collision integral with terms that describe energy dissipation, momentum relaxation, and the decay of spatial coherences (localization). Based on a particle-based solution to the Wigner transport equation with the model collision integral, we simulate quantum electronic transport at 10 K in a GaAs/AlGaAs superlattice and accurately reproduce its current density vs field characteristics obtained in experiment.

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

PubMed

Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun; Ko, Suk-Min; Cho, Yong-Hoon

2013-01-01

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Optical and Electronic NOx Sensors for Applications in Mechatronics

PubMed Central

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A.; Wolter, Scott D.; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NOx sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NOx show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NOx in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NOx sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling. PMID:22412315

Semiconductor devices for entangled photon pair generation: a review

NASA Astrophysics Data System (ADS)

Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

2017-07-01

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

Quantum Entanglement of Quantum Dot Spin Using Flying Qubits

DTIC Science & Technology

2015-05-01

QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS UNIVERSITY OF MICHIGAN MAY 2015 FINAL TECHNICAL REPORT APPROVED FOR PUBLIC RELEASE...To) SEP 2012 – DEC 2014 4. TITLE AND SUBTITLE QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS 5a. CONTRACT NUMBER FA8750-12-2-0333...been to advance the frontier of quantum entangled semiconductor electrons using ultrafast optical techniques. The approach is based on

Electronic Noise and Fluctuations in Solids

NASA Astrophysics Data System (ADS)

Kogan, Sh.

2008-07-01

Preface; Part I. Introduction. Some Basic Concepts of the Theory of Random Processes: 1. Probability density functions. Moments. Stationary processes; 2. Correlation function; 3. Spectral density of noise; 4. Ergodicity and nonergodicity of random processes; 5. Random pulses and shot noise; 6. Markov processes. General theory; 7. Discrete Markov processes. Random telegraph noise; 8. Quasicontinuous (Diffusion-like) Markov processes; 9. Brownian motion; 10. Langevin approach to the kinetics of fluctuations; Part II. Fluctuation-Dissipation Relations in Equilibrium Systems: 11. Derivation of fluctuation-dissipation relations; 12. Equilibrium noise in quasistationary circuits. Nyquist theorem; 13. Fluctuations of electromagnetic fields in continuous media; Part III. Fluctuations in Nonequilibrium Gases: 14. Some basic concepts of hot-electrons' physics; 15. Simple model of current fluctuations in a semiconductor with hot electrons; 16. General kinetic theory of quasiclassical fluctuations in a gas of particles. The Boltzmann-Langevin equation; 17. Current fluctuations and noise temperature; 18. Current fluctuations and diffusion in a gas of hot electrons; 19. One-time correlation in nonequilibrium gases; 20. Intervalley noise in multivalley semiconductors; 21. Noise of hot electrons emitting optical phonons in the streaming regime; 22. Noise in a semiconductor with a postbreakdown stable current filament; Part IV. Generation-recombination noise: 23. G-R noise in uniform unipolar semiconductors; 24. Noise produced by recombination and diffusion; Part V. Noise in quantum ballistic systems: 25. Introduction; 26. Equilibrium noise and shot noise in quantum conductors; 27. Modulation noise in quantum point contacts; 28. Transition from a ballistic conductor to a macroscopic one; 29. Noise in tunnel junctions; Part VI. Resistance noise in metals: 30. Incoherent scattering of electrons by mobile defects; 31. Effect of mobile scattering centers on the electron interference pattern; 32. Fluctuations of the number of diffusing scattering centers; 33. Temperature fluctuations and the corresponding noise; Part VII. Noise in strongly disordered conductors: 34. Basic ideas of the percolation theory; 35. Resistance fluctuations in percolation systems. 36. Experiments; Part VIII. Low-frequency noise with an 1/f-type spectrum and random telegraph noise: 37. Introduction; 38. Some general properties of 1/f noise; 39. Basic models of 1/f noise; 40./f noise in metals; 41. Low-frequency noise in semiconductors; 42. Magnetic noise in spin glasses and some other magnetic systems; 43. Temperature fluctuations as a possible source of 1/f noise; 44. Random telegraph noise; 45. Fluctuations with 1/f spectrum in other systems; 46. General conclusions on 1/f noise; Part IX. Noise in Superconductors and Superconducting Structures: 47. Noise in Josephson junctions; 48. Noise in type II superconductors; References; Subject index.

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Inkjet printed fluorescent nanorod layers exhibit superior optical performance over quantum dots

NASA Astrophysics Data System (ADS)

Halivni, Shira; Shemesh, Shay; Waiskopf, Nir; Vinetsky, Yelena; Magdassi, Shlomo; Banin, Uri

2015-11-01

Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays.Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06248a

Study of quantum confinement effects in ZnO nanostructures

NASA Astrophysics Data System (ADS)

Movlarooy, Tayebeh

2018-03-01

Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Arthur J. Nozik | NREL

Science.gov Websites

interdisciplinary fields of photoelectrochemistry, semiconductor-molecule interfaces, quantum size effects, electron photoelectrochemistry (hot carrier effects, size quantization effects, superlattice electrodes, quantum dot solar cells

Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures

NASA Astrophysics Data System (ADS)

Bondarev, Igor V.; Vladimirova, Maria R.

2018-04-01

We discuss neutral and charged complexes (biexcitons and trions) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons—long-lived neutral Coulomb-bound pairs of electrons and holes of different layers—have been known for semiconductor coupled quantum wells and have recently been reported for van der Waals heterostructures such as double bilayer graphene and transition-metal dichalcogenides. Using the configuration space approach, we derive the analytical expressions for the trion and biexciton binding energies as a function of interlayer distance. The method captures essential kinematics of complex formation to reveal significant binding energies, up to a few tens of meV for typical interlayer distances ˜3 -5 Å , with the trion binding energy always being greater than that of the biexciton. Our results can contribute to the understanding of more complex many-body phenomena such as exciton Bose-Einstein condensation and Wigner-like electron-hole crystallization in layered semiconductor heterostructures.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots. A TR-SHG study of these electronically-coupled quantum-dot films reveals temperature-activated cooling of hot charge carriers and coherent excitation of a previously-unidentified surface optical phonon. Finally, I report the first experimental observation of ultrafast electron transfer from the higher excited states of a colloidal quantum dot (PbSe) to delocalized conduction band states of a widely-used electron acceptor (TiO2). The electric field resulting from ultrafast (<50fs) separation of charge carriers across the PbSe/TiO2(110) interface excites coherent vibration of the TiO2 surface atoms, whose collective motions can be followed in real time.

Semiconductor quantum dots: synthesis and water-solubilization for biomedical applications.

PubMed

Yu, William W

2008-10-01

Quantum dots (QDs) are generally nanosized inorganic particles. They have distinctive size-dependent optical properties due to their very small size (mostly < 10 nm). QDs are regarded as promising new fluorescent materials for biological labeling and imaging because of their superior properties compared with traditional organic molecular dyes. These properties include high quantum efficiency, long-term photostability and very narrow emission but broad absorption spectra. Recent developments in synthesizing high quality semiconductor QDs (mainly metal-chalcogenide compounds) and forming biocompatible structures for biomedical applications are discussed in this paper. This information may facilitate the research to create new materials/technologies for future clinical applications.

Reduction of CO2 to C1 products and fuel

USGS Publications Warehouse

Mill, T.; Ross, D.

2002-01-01

Photochemical semiconductor processes readily reduced CO2 to a broad range of C1 products. However the intrinsic and solar efficiencies for the processes were low. Improved quantum efficiencies could be realized utilizing quantum-sized particles, but at the expense of using less of the visible solar spectrum. Conversely, semiconductors with small bandgaps used more of the visible solar spectrum at the expense of quantum efficiency. Thermal reduction of CO2 with Fe(II) was thermodynamically favored for forming many kinds of organic compounds and occurred readily with olivine and other Fe(II) minerals above 200??C to form higher alkanes and alkenes. No added hydrogen was required.

Deterministic radiative coupling of two semiconductor quantum dots to the optical mode of a photonic crystal nanocavity.

PubMed

Calic, M; Jarlov, C; Gallo, P; Dwir, B; Rudra, A; Kapon, E

2017-06-22

A system of two site-controlled semiconductor quantum dots (QDs) is deterministically integrated with a photonic crystal membrane nano-cavity. The two QDs are identified via their reproducible emission spectral features, and their coupling to the fundamental cavity mode is established by emission co-polarization and cavity feeding features. A theoretical model accounting for phonon interaction and pure dephasing reproduces the observed results and permits extraction of the light-matter coupling constant for this system. The demonstrated approach offers a platform for scaling up the integration of QD systems and nano-photonic elements for integrated quantum photonics applications.

Microwave-Driven Coherent Operation of a Semiconductor Quantum Dot Charge Qubit

DTIC Science & Technology

2015-02-16

indicating that understanding high frequency charge noise as well as charge relaxation at the sweet spot will be important for further development. The...Microwave-driven coherent operation of a semiconductor quantum dot charge qubit Dohun Kim,1 D. R. Ward,1 C. B. Simmons,1 John King Gamble,2 Robin...University of Wisconsin-Madison, Madison, WI 53706, USA A most intuitive realization of a qubit is a sin- gle electron charge sitting at two well -defined

Computational models for the berry phase in semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca; Sebetci, A.

2014-10-06

By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

NASA Astrophysics Data System (ADS)

Schneebeli, L.; Kira, M.; Koch, S. W.

2008-08-01

It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

NASA Astrophysics Data System (ADS)

Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

2018-01-01

Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

Control of propagation of spatially localized polariton wave packets in a Bragg mirror with embedded quantum wells

NASA Astrophysics Data System (ADS)

Sedova, I. E.; Chestnov, I. Yu.; Arakelian, S. M.; Kavokin, A. V.; Sedov, E. S.

2018-01-01

We considered the nonlinear dynamics of Bragg polaritons in a specially designed stratified semiconductor structure with embedded quantum wells, which possesses a convex dispersion. The model for the ensemble of single periodically arranged quantum wells coupled with the Bragg photon fields has been developed. In particular, the generalized Gross-Pitaevskii equation with the non-parabolic dispersion has been obtained for the Bragg polariton wave function. We revealed a number of dynamical regimes for polariton wave packets resulting from competition of the convex dispersion and the repulsive nonlinearity effects. Among the regimes are spreading, breathing and soliton propagation. When the control parameters including the exciton-photon detuning, the matter-field coupling and the nonlinearity are manipulated, the dynamical regimes switch between themselves.

Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyo, S. K., E-mail: sklyo@uci.edu; Pan, W.

2015-11-21

We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by themore » electric and magnetic fields.« less

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

Unbound states in quantum heterostructures

PubMed Central

Bastard, G

2006-01-01

We report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron – hole states. The part played by Auger scattering in Quantum Dots is also discussed.

Quantum confinement of exciton-polaritons in a structured (Al,Ga)As microcavity

NASA Astrophysics Data System (ADS)

Kuznetsov, Alexander S.; Helgers, Paul L. J.; Biermann, Klaus; Santos, Paulo V.

2018-05-01

The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single polaritons trapped in potentials with precisely controlled shape and size. In this study we reach the confinement of microcavity polaritons in traps with an effective potential width down to 1 µm, produced by patterning the active region of the (Al,Ga)As microcavity between two molecular beam epitaxy growth runs. We correlate spectroscopic and structural data to show that the smooth surface relief of the patterned traps translates into a graded confinement potential characterized by lateral interfaces with a finite lateral width. We show that the structuring method is suitable for the fabrication of arrays of proximal traps, supporting hybridization between adjacent lattice sites.

Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

2000-01-01

Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

In situ formation of pyridyl-functionalized poly(3-hexylthiophene)s via quenching of the Grignard metathesis polymerization: Toward ligands for semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kochemba, William Michael; Pickel, Deanna L.; Sumpter, Bobby G.

The synthesis of well-defined, end-functional poly(3-hexylthiophene)s (P3HTs) by in situ quenching of the Grignard metathesis (GRIM) polymerization is complicated by the extreme tendency to favor difunctional products in all but a few cases. A facile one-pot method for preparing 2-pyridyl and 3-pyridyl P3HTs with high abundance of monofunctional products is established via an examination of the kinetics of the end-functionalization quenching reaction with lithium chloride complexes of 2- and 3-pyridyl Grignard reagents. Density functional theory calculations guide the selection of pyridine as the end group, which provides the capacity to ligate cadmium selenide (CdSe) nanocrystals and arrests aggregation upon thermalmore » annealing when dispersed in a P3HT matrix. The relative abundances of various end-functional products, as ascertained by high-resolution matrix assisted laser desorption ionization time-of-flight mass spectrometry, can be altered through the use of 1-pentene as an additive: GRIM polymerizations quenched with 3-pyridyl and 2-pyridyl Grignard reagents show 5% and 18% abundances of difunctional, pyridyl-capped P3HTs, respectively, when 1-pentene is present at 1000:1 relative to the nickel catalyst. This represents a significant improvement compared to quenching with aryl Grignard reagents, where difunctional products predominate. Furthermore, the ability to manipulate end group compositions coupled with the propensity of pyridyl-functionalized P3HTs to ligate semiconductor quantum dots (SQDs) opens new possibilities for tuning the morphology of conjugated polymer/SQD blends.« less

van der Waals epitaxial two-dimensional CdSxSe(1-x) semiconductor alloys with tunable-composition and application to flexible optoelectronics.

PubMed

Xia, Jing; Zhao, Yun-Xuan; Wang, Lei; Li, Xuan-Ze; Gu, Yi-Yi; Cheng, Hua-Qiu; Meng, Xiang-Min

2017-09-21

Despite the substantial progress in the development of two-dimensional (2D) materials from conventional layered crystals, it still remains particularly challenging to produce high-quality 2D non-layered semiconductor alloys which may bring in some unique properties and new functions. In this work, the synthesis of well-oriented 2D non-layered CdS x Se (1-x) semiconductor alloy flakes with tunable compositions and optical properties is established. Structural analysis reveals that the 2D non-layered alloys follow an incommensurate van der Waals epitaxial growth pattern. Photoluminescence measurements show that the 2D alloys have composition-dependent direct bandgaps with the emission peak varying from 1.8 eV to 2.3 eV, coinciding well with the density functional theory calculations. Furthermore, photodetectors based on the CdS x Se (1-x) flakes exhibit a high photoresponsivity of 703 A W -1 with an external quantum efficiency of 1.94 × 10 3 and a response time of 39 ms. Flexible devices fabricated on a thin mica substrate display good mechanical stability upon repeated bending. This work suggests a facile and general method to produce high-quality 2D non-layered semiconductor alloys for next-generation optoelectronic devices.

Quantum ballistic transport in strained epitaxial germanium

NASA Astrophysics Data System (ADS)

Gul, Y.; Holmes, S. N.; Newton, P. J.; Ellis, D. J. P.; Morrison, C.; Pepper, M.; Barnes, C. H. W.; Myronov, M.

2017-12-01

Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.

Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

PubMed Central

Usuki, T; Ohshima, T; Sakuma, Y; Kawabe, M; Okada, Y; Takemoto, K; Miyazawa, T; Hirose, S; Nakata, Y; Takatsu, M; Yokoyama, N

2006-01-01

An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.

Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

NASA Astrophysics Data System (ADS)

Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

2017-10-01

Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

Spectroscopic investigations on the interaction of thioacetamide with ZnO quantum dots and application for its fluorescence sensing

NASA Astrophysics Data System (ADS)

Saha, Dipika; Negi, Devendra P. S.

2018-01-01

The purpose of the present work was to develop a method for the sensing of thioacetamide by using spectroscopic techniques. Thioacetamide is a carcinogen and it is important to detect its presence in food-stuffs. Semiconductor quantum dots are frequently employed as sensing probes since their absorption and fluorescence properties are highly sensitive to the interaction with substrates present in the solution. In the present work, the interaction between thioacetamide and ZnO quantum dots has been investigated by using UV-visible, fluorescence and infrared spectroscopy. Besides, dynamic light scattering (DLS) has also been utilized for the interaction studies. UV-visible absorption studies indicated the bonding of the lone pair of sulphur atom of thioacetamide with the surface of the semiconductor. The fluorescence band of the ZnO quantum dots was found to be quenched in the presence of micromolar concentrations of thioacetamide. The quenching was found to follow the Stern-Volmer relationship. The Stern-Volmer constant was evaluated to be 1.20 × 105 M- 1. Infrared spectroscopic measurements indicated the participation of the sbnd NH2 group and the sulphur atom of thioacetamide in bonding with the surface of the ZnO quantum dots. DLS measurements indicated that the surface charge of the semiconductor was shielded by the thioacetamide molecules.

Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-04-01

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

PubMed

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

ERIC Educational Resources Information Center

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems

NASA Astrophysics Data System (ADS)

Hughes, Stephen; Agarwal, Girish S.

2017-02-01

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems.

PubMed

Hughes, Stephen; Agarwal, Girish S

2017-02-10

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Modeling Magnetic Properties in EZTB

NASA Technical Reports Server (NTRS)

Lee, Seungwon; vonAllmen, Paul

2007-01-01

A software module that calculates magnetic properties of a semiconducting material has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure. [EZTB is designed to model the electronic structures of semiconductor devices ranging from bulk semiconductors, to quantum wells, quantum wires, and quantum dots. EZTB implements an empirical tight-binding mathematical model of the underlying physics.] This module can model the effect of a magnetic field applied along any direction and does not require any adjustment of model parameters. The module has thus far been applied to study the performances of silicon-based quantum computers in the presence of magnetic fields and of miscut angles in quantum wells. The module is expected to assist experimentalists in fabricating a spin qubit in a Si/SiGe quantum dot. This software can be executed in almost any Unix operating system, utilizes parallel computing, can be run as a Web-portal application program. The module has been validated by comparison of its predictions with experimental data available in the literature.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

DOE PAGES

Sutter-Fella, Carolin M.; Li, Yanbo; Amani, Matin; ...

2015-12-21

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH 3NH 3PbI 3-xBr x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamicmore » range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).« less

Cryptography based on the absorption/emission features of multicolor semiconductor nanocrystal quantum dots.

PubMed

Zhou, Ming; Chang, Shoude; Grover, Chander

2004-06-28

Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.

Luminescence and related properties of nanocrystalline porous silicon

NASA Astrophysics Data System (ADS)

Koshida, N.

This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.

Real Time Imaging Analysis Using a Terahertz Quantum Cascade Laser and a Microbolometer Focal Plane Array

DTIC Science & Technology

2008-12-01

evident from Figure 7 that, if the applied bias is not correct, it is very likely that electrons will not tunnel into their intended energy state...the theoretical laser contrasts sharply to that of semiconductor lasers. Semiconductor lasers rely on electron hole recombination or interband ...the active layer of a forward- biased pn junction [26]. In contrast to this, the QCL is a unipolar device that uses a quantum well (QW) structure

Model of an Injection Semiconductor Quantum-Dot Laser

NASA Astrophysics Data System (ADS)

Koryukin, I. V.

2018-05-01

We propose an asymmetric electron-hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.

Fermionic entanglement via quantum walks in quantum dots

NASA Astrophysics Data System (ADS)

Melnikov, Alexey A.; Fedichkin, Leonid E.

2018-02-01

Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Ballistic superconductivity in semiconductor nanowires.

PubMed

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K; van Veen, Jasper; de Moor, Michiel W A; Bommer, Jouri D S; van Woerkom, David J; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Quintero-Pérez, Marina; Cassidy, Maja C; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P

2017-07-06

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardin, Gaël; Li, Hebin; Autry, Travis M.

2015-03-21

We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures,more » such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.« less

Integrated Broadband Quantum Cascade Laser

NASA Technical Reports Server (NTRS)

Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)

2016-01-01

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Quantum Dots in a Polymer Composite: A Convenient Particle-in-a-Box Laboratory Experiment

ERIC Educational Resources Information Center

Rice, Charles V.; Giffin, Guinevere A.

2008-01-01

Semiconductor quantum dots are at the forefront of materials science chemistry with applications in biological imaging and photovoltaic technologies. We have developed a simple laboratory experiment to measure the quantum-dot size from fluorescence spectra. A major roadblock of quantum-dot based exercises is the particle synthesis and handling;…

All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

PubMed Central

Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

2014-01-01

Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

Semiconductor quantum dot super-emitters: spontaneous emission enhancement combined with suppression of defect environment using metal-oxide plasmonic metafilms

NASA Astrophysics Data System (ADS)

Sadeghi, Seyed M.; Wing, Waylin J.; Gutha, Rithvik R.; Sharp, Christina

2018-01-01

We demonstrate that a metal-oxide plasmonic metafilm consisting of a Si/Al oxide junction in the vicinity of a thin gold layer can quarantine excitons in colloidal semiconductor quantum dots against their defect environments. This process happens while the plasmon fields of the gold layer enhance spontaneous emission decay rates of the quantum dots. We study the emission dynamics of such quantum dots when the distance between the Si/Al oxide junction and the gold thin layer is varied. The results show that for distances less than a critical value the lifetime of the quantum dots can be elongated while they experience intense plasmon fields. This suggests that the metal-oxide metafilm can keep photo-excited electrons in the cores of the quantum dots, suppressing their migration to the surface defect sites. This leads to suppression of Auger recombination, offering quantum dot super-emitters with emission that is enhanced not only by the plasmon fields (Purcell effect), but also by strong suppression of the non-radiative decay caused by the defect sites.

Imaginary geometric phases of quantum trajectories in high-order terahertz sideband generation

NASA Astrophysics Data System (ADS)

Yang, Fan; Liu, Ren-Bao

2014-03-01

Quantum evolution of particles under strong fields can be described by a small number of quantum trajectories that satisfy the stationary phase condition in the Dirac-Feynmann path integral. The quantum trajectories are the key concept to understand the high-order terahertz siedeband generation (HSG) in semiconductors. Due to the nontrivial ``vacuum'' states of band materials, the quantum trajectories of optically excited electron-hole pairs in semiconductors can accumulate geometric phases under the driving of an elliptically polarized THz field. We find that the geometric phase of the stationary trajectory is generally complex with both real and imaginary parts. In monolayer MoS2, the imaginary parts of the geometric phase leads to a changing of the polarization ellipticity of the sideband. We further show that the imaginary part originates from the quantum interference of many trajectories with different phases. Thus the observation of the polarization ellipticity of the sideband shall be a good indication of the quantum nature of the stationary trajectory. This work is supported by Hong Kong RGC/GRF 401512 and the CUHK Focused Investments Scheme.

Exciton shelves for charge and energy transport in third-generation quantum-dot devices

NASA Astrophysics Data System (ADS)

Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant

2014-03-01

Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.

Optical and Electronic NO(x) Sensors for Applications in Mechatronics.

PubMed

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A; Wolter, Scott D; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NO(x) show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NO(x) in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NO(x) sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling.

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Miao, K.; Sadasivam, S.; Charles, J.; Klimeck, G.; Fisher, T. S.; Kubis, T.

2016-03-01

Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.

Electronic structure properties of deep defects in hBN

NASA Astrophysics Data System (ADS)

Dev, Pratibha; Prdm Collaboration

In recent years, the search for room-temperature solid-state qubit (quantum bit) candidates has revived interest in the study of deep-defect centers in semiconductors. The charged NV-center in diamond is the best known amongst these defects. However, as a host material, diamond poses several challenges and so, increasingly, there is an interest in exploring deep defects in alternative semiconductors such as hBN. The layered structure of hBN makes it a scalable platform for quantum applications, as there is a greater potential for controlling the location of the deep defect in the 2D-matrix through careful experiments. Using density functional theory-based methods, we have studied the electronic and structural properties of several deep defects in hBN. Native defects within hBN layers are shown to have high spin ground states that should survive even at room temperature, making them interesting solid-state qubit candidates in a 2D matrix. Partnership for Reduced Dimensional Material (PRDM) is part of the NSF sponsored Partnerships for Research and Education in Materials (PREM).

A superconducting focal plane array for ultraviolet, optical, and near-infrared astrophysics.

PubMed

Mazin, Benjamin A; Bumble, Bruce; Meeker, Seth R; O'Brien, Kieran; McHugh, Sean; Langman, Eric

2012-01-16

Microwave Kinetic Inductance Detectors, or MKIDs, have proven to be a powerful cryogenic detector technology due to their sensitivity and the ease with which they can be multiplexed into large arrays. A MKID is an energy sensor based on a photon-variable superconducting inductance in a lithographed microresonator, and is capable of functioning as a photon detector across the electromagnetic spectrum as well as a particle detector. Here we describe the first successful effort to create a photon-counting, energy-resolving ultraviolet, optical, and near infrared MKID focal plane array. These new Optical Lumped Element (OLE) MKID arrays have significant advantages over semiconductor detectors like charge coupled devices (CCDs). They can count individual photons with essentially no false counts and determine the energy and arrival time of every photon with good quantum efficiency. Their physical pixel size and maximum count rate is well matched with large telescopes. These capabilities enable powerful new astrophysical instruments usable from the ground and space. MKIDs could eventually supplant semiconductor detectors for most astronomical instrumentation, and will be useful for other disciplines such as quantum optics and biological imaging.

Reconfigurable exciton-plasmon interconversion for nanophotonic circuits

PubMed Central

Lee, Hyun Seok; Luong, Dinh Hoa; Kim, Min Su; Jin, Youngjo; Kim, Hyun; Yun, Seokjoon; Lee, Young Hee

2016-01-01

The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and quantum wells, are a promising platform for realizing sub-diffraction limited optical components. Meanwhile, two-dimensional transition metal dichalcogenides (TMDs) have received broad interest in optoelectronics owing to tightly bound excitons at room temperature, strong light-matter and exciton-plasmon interactions, available top-down wafer-scale integration, and band-gap tunability. Here, we demonstrate principal functionalities for on-chip optical communications via reconfigurable exciton-plasmon interconversions in ∼200-nm-diameter Ag-nanowires overlapping onto TMD transistors. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of ∼32 μm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio of∼190. Our results illustrate the unique merits of two-dimensional semiconductors for constructing reconfigurable device architectures in integrated nanophotonic circuits. PMID:27892463

EPR and Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

NASA Astrophysics Data System (ADS)

König, Jürgen; MacDonald, Allan H.

2003-08-01

Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Decoupling the effects of confinement and passivation on semiconductor quantum dots.

PubMed

Rudd, Roya; Hall, Colin; Murphy, Peter J; Reece, Peter J; Charrault, Eric; Evans, Drew

2016-07-20

Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfluorinated polyether oil. Very high band gaps are observed for fluorinated QDs with increasing levels of quantum confinement (from 4.2 to 4.6 eV for Si, and 2.5 to 3 eV for Ge), with a shift down to 3.4 eV for Si when oxygen is introduced to the passivation layer. In contrast, the fluorinated Si QDs display a constant UV photoluminescence (3.8 eV) irrespective of size. This ability to tune the size and passivation independently opens a new opportunity to extending the use of simple semiconductor QDs.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

Boundary Condition for Modeling Semiconductor Nanostructures

NASA Technical Reports Server (NTRS)

Lee, Seungwon; Oyafuso, Fabiano; von Allmen, Paul; Klimeck, Gerhard

2006-01-01

A recently proposed boundary condition for atomistic computational modeling of semiconductor nanostructures (particularly, quantum dots) is an improved alternative to two prior such boundary conditions. As explained, this boundary condition helps to reduce the amount of computation while maintaining accuracy.

Phonon-wave-induced resonance fluorescence in semiconductor nanostructures: acoustoluminescence in the terahertz range.

PubMed

Ahn, K J; Milde, F; Knorr, A

2007-01-12

Acoustic wave excitation of semiconductor quantum dots generates resonance fluorescence of electronic intersublevel excitations. Our theoretical analysis predicts acoustoluminescence, in particular, a conversion of acoustic into electromagnetic THz waves over a broad spectral range.

Quantum Confined Semiconductors for High Efficiency Photovoltaics

NASA Astrophysics Data System (ADS)

Beard, Matthew

2014-03-01

Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photon-to-free energy conversion step. In this discussion, I will present the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (NCs confined in three dimensions) in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion. The solar cells are constructed using a low temperature solution based deposition of PbS or PbSe QDs as the absorber layer. Different chemical treatments of the QD layer are employed in order to obtain good electrical communication while maintaining the quantum-confined properties of the QDs. We have characterized the transport and carrier dynamics using a transient absorption, time-resolved THz, and temperature-dependent photoluminescence. I will discuss the interplay between carrier generation, recombination, and mobility within the QD layers. A unique aspect of our devices is that the QDs exhibit multiple exciton generation with an efficiency that is ~ 2 to 3 times greater than the parental bulk semiconductor.

Strong light illumination on gain-switched semiconductor lasers helps the eavesdropper in practical quantum key distribution systems

NASA Astrophysics Data System (ADS)

Fei, Yang-yang; Meng, Xiang-dong; Gao, Ming; Yang, Yi; Wang, Hong; Ma, Zhi

2018-07-01

The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee et al., 2017). However, other characteristics also vary as temperature increases. These variations may help the eavesdropper in practical quantum key distribution systems. We study the effects of temperature increase on gain-switched semiconductor lasers by simulating temperature dependent rate equations. The results show that temperature increase may cause large intensity fluctuation, decrease the output intensity and lead the signal state and decoy state distinguishable. We also propose a modified photon number splitting attack by exploiting the effects of temperature increase. Countermeasures are also proposed.

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.

PubMed

Stolichnov, Igor; Colla, Enrico; Setter, Nava; Wojciechowski, Tomasz; Janik, Elzbieta; Karczewski, Grzegorz

2006-12-15

Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.

Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

NASA Astrophysics Data System (ADS)

Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

2006-09-01

Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

NASA Astrophysics Data System (ADS)

Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

2016-09-01

When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier-carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Funding Proposal for EDISON’20 Conference Buffalo, New York, 07/17 - 07/21, 2017

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bird, Jonathan

EDISON’20 – The 20th International Conference on Electron Dynamics in Semiconductors, Optoe- lectronics and Nanostructures – was held at the Hyatt Regency Hotel, Buffalo, NY from July 17 – 21, 2017. The technical focus of this conference was on the fundamental physics and applications of nonequilibrium classical and quantum carrier dynamics in semiconductors, optoelectronic de- vices, and nanostructures. This five-day, single-session conference featured a program consisting of some 15 invited talks, given by internationally-renowned academics from the U.S., Europe, and Japan. Their keynote presentations covered topics including: terahertz phenomena in semiconductors; quantum transport in novel two-dimensional semiconductors; topological insulators; mesoscopicmore » phenomena in semiconductors, and; semiconductor spintronics. The invited papers were supplemented by some 30 contributed talks, selected from almost 120 abstracts submitted in response to the conference’s call for papers, and by two poster sessions that each consisted of close to 40 different reports. This critical mass in terms of scientific content ensured a highly vibrant conference, in which leaders in the field had the opportunity to interact closely with early-career scientists.« less

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Optical orientation of electrons in compensated semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kokurin, I. A., E-mail: kokorinia@math.mrsu.ru; Petrov, P. V.; Averkiev, N. S.

2013-09-15

The theory of the optical orientation of charge carriers in compensated III-V semiconductors and quantum wells for the case where electrons are excited to the conduction band from Mn-charged acceptor states is presented. It is shown that, in GaAs/AlGaAs quantum wells, the degree of the spin orientation of conduction-band electrons in this excitation scheme can be as high as 85%. This spin-orientation enhancement results from an increase in the heavy-hole contribution to the acceptor state in the vicinity of the defect center rather than from level splitting caused by quantum confinement. It is shown that the degree of circular polarizationmore » of the photoluminescence emitted upon the recombination of electrons thermalized at the bottom of the band with holes occupying the acceptor ground state in a quantum well can exceed 70%.« less

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective.

PubMed

Giansante, Carlo; Infante, Ivan

2017-10-19

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI 3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition.

The diamagnetic susceptibility of a donor in a semiconductor core shell quantum dot

NASA Astrophysics Data System (ADS)

Sudharshan, M. S.; Subhash, P.; Shaik, Nagoor Babu; Kalpana, P.; Jayakumar, K.; Reuben, A. Merwyn Jasper D.

2015-06-01

The effect of Aluminium concentration, shell thickness and size of the core shell Quantum Dot on the Diamagnetic Susceptibility of a donor in the Core Shell Quantum Dot is calculated in the effective mass approximation using the variational method. The results are presented and discussed.

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

PubMed

Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

2007-05-01

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

Quantum walks of interacting fermions on a cycle graph

PubMed Central

Melnikov, Alexey A.; Fedichkin, Leonid E.

2016-01-01

Quantum walks have been employed widely to develop new tools for quantum information processing recently. A natural quantum walk dynamics of interacting particles can be used to implement efficiently the universal quantum computation. In this work quantum walks of electrons on a graph are studied. The graph is composed of semiconductor quantum dots arranged in a circle. Electrons can tunnel between adjacent dots and interact via Coulomb repulsion, which leads to entanglement. Fermionic entanglement dynamics is obtained and evaluated. PMID:27681057

Investigation of the quantum efficiency of optical heterodyne detectors

NASA Technical Reports Server (NTRS)

Batchman, T. E.

1984-01-01

The frequency response and quantum efficiency of optical photodetectors for heterodyne receivers is investigated. The measurements utilized two spectral lines from the output of two lasers as input to the photodetectors. These lines are easily measurable in power and frequency and hence serve as known inputs. By measuring the output current of the photodetector the quantum efficiency is determined as a function of frequency separation between the two input signals. An investigation of the theoretical basis and accuracy of this type of measurement relative to similar measurements utilizing risetime is undertaken. A theoretical study of the heterodyne process in photodetectors based on semiconductor physics is included so that higher bandwidth detectors may be designed. All measurements are made on commercially available detectors and manufacturers' specifications for normal photodetector operation are compared to the measured heterodyne characteristics.

Measurements of the linewidth enhancement factor of mid-infrared quantum cascade lasers by different optical feedback techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jumpertz, L., E-mail: louise.jumpertz@telecom-paristech.fr; MirSense, 8 avenue de la Vauve, F-91120 Palaiseau; Michel, F.

2016-01-15

Precise knowledge of the linewidth enhancement factor of a semiconductor laser under actual operating conditions is of prime importance since this parameter dictates various phenomena such as linewidth broadening or optical nonlinearities enhancement. The above-threshold linewidth enhancement factor of a mid-infrared quantum cascade laser structure operated at 10{sup ∘}C is determined experimentally using two different methods based on optical feedback. Both Fabry-Perot and distributed feedback quantum cascade lasers based on the same active area design are studied, the former by following the wavelength shift as a function of the feedback strength and the latter by self-mixing interferometry. The results aremore » consistent and unveil a clear pump current dependence of the linewidth enhancement factor, with values ranging from 0.8 to about 3.« less

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Diluted Magnetic Semiconductors for Magnetic Field Tunable Infrared Detectors

DTIC Science & Technology

2005-06-30

significantly improved performance and technological advances of quantum well infrared photodetectors (QWIPs)14 and quantum cascade lasers (QCLs)15...NUMBER FA8655-04-1-3069 5b. GRANT NUMBER 4. TITLE AND SUBTITLE Magnetic Field Tunable Terahertz Quantum Well Infrared Photodetector 5c...fabrication in II-VI materials, quantum well infrared photodetector device design and magneto-optical characterisation are all well understood

Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

PubMed

Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

2016-07-07

Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

Direct grafting of long-lived luminescent indicator dyes to GaN light-emitting diodes for chemical microsensor development.

PubMed

López-Gejo, Juan; Navarro-Tobar, Álvaro; Arranz, Antonio; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

2011-10-01

Two new methods for covalent functionalization of GaN based on plasma activation of its surface are presented. Both of them allow attachment of sulfonated luminescent ruthenium(II) indicator dyes to the p- and n-type semiconductor as well as to the surface of nonencapsulated chips of GaN light-emitting diodes (blue LEDs). X-ray photoelectron spectroscopy analysis of the functionalized semiconductor confirms the formation of covalent bonds between the GaN surface and the dye. Confocal fluorescence microscopy with single-photon-timing (SPT) detection has been used for characterization of the functionalized surfaces and LED chips. While the ruthenium complex attached to p-GaN under an oxygen-free atmosphere gives significantly long mean emission lifetimes for the indicator dye (ca. 2000 ns), the n-GaN-functionalized surfaces display surprisingly low values (600 ns), suggesting the occurrence of a quenching process. A photoinduced electron injection from the dye to the semiconductor conduction band, followed by a fast back electron transfer, is proposed to be responsible for the excited ruthenium dye deactivation. This process invalidates the use of the n-GaN/dye system for sensing applications. However, for p-GaN/dye materials, the luminescence decay accelerates in the presence of O(2). The moderate sensitivity is attributed to the fact that only a monolayer of indicator dye is anchored to the semiconductor surface but serves as a demonstrator device. Moreover, the luminescence decays of the functionalized LED chip measured with excitation of either an external (laser) source or the underlying LED emission (from p-GaN/InGaN quantum wells) yield the same mean luminescence lifetime. These results pave the way for using advanced LEDs to develop integrateable optochemical microsensors for gas analysis. © 2011 American Chemical Society

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects.

PubMed

Pala, M G; Baltazar, S; Martins, F; Hackens, B; Sellier, H; Ouisse, T; Bayot, V; Huant, S

2009-07-01

We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh-Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov-Bohm effect.

Spectroscopic investigations on the interaction of thioacetamide with ZnO quantum dots and application for its fluorescence sensing.

PubMed

Saha, Dipika; Negi, Devendra P S

2018-01-15

The purpose of the present work was to develop a method for the sensing of thioacetamide by using spectroscopic techniques. Thioacetamide is a carcinogen and it is important to detect its presence in food-stuffs. Semiconductor quantum dots are frequently employed as sensing probes since their absorption and fluorescence properties are highly sensitive to the interaction with substrates present in the solution. In the present work, the interaction between thioacetamide and ZnO quantum dots has been investigated by using UV-visible, fluorescence and infrared spectroscopy. Besides, dynamic light scattering (DLS) has also been utilized for the interaction studies. UV-visible absorption studies indicated the bonding of the lone pair of sulphur atom of thioacetamide with the surface of the semiconductor. The fluorescence band of the ZnO quantum dots was found to be quenched in the presence of micromolar concentrations of thioacetamide. The quenching was found to follow the Stern-Volmer relationship. The Stern-Volmer constant was evaluated to be 1.20×10 5 M -1 . Infrared spectroscopic measurements indicated the participation of the NH 2 group and the sulphur atom of thioacetamide in bonding with the surface of the ZnO quantum dots. DLS measurements indicated that the surface charge of the semiconductor was shielded by the thioacetamide molecules. Copyright © 2017 Elsevier B.V. All rights reserved.

Determining the exact number of dye molecules attached to colloidal CdSe/ZnS quantum dots in Förster resonant energy transfer assemblies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaiser, Uwe; Jimenez de Aberasturi, Dorleta; Vázquez-González, Margarita

2015-01-14

Semiconductor quantum dots functionalized with organic dye molecules are important tools for biological sensor applications. Energy transfer between the quantum dot and the attached dyes can be utilized for sensing. Though important, the determination of the real number of dye molecules attached per quantum dot is rather difficult. In this work, a method will be presented to determine the number of ATTO-590 dye molecules attached to CdSe/ZnS quantum dots based on time resolved spectral analysis. The energy transfer from the excited quantum dot to the attached ATTO-590 dye leads to a reduced lifetime of the quantum dot's excitons. The highermore » the concentration of dye molecules, the shorter the excitonic lifetime becomes. However, the number of dye molecules attached per quantum dot will vary. Therefore, for correctly explaining the decay of the luminescence upon photoexcitation of the quantum dot, it is necessary to take into account the distribution of the number of dyes attached per quantum dot. A Poisson distribution of the ATTO-590 dye molecules not only leads to excellent agreement between experimental and theoretical decay curves but also additionally yields the average number of dye molecules attached per quantum dot. In this way, the number of dyes per quantum dot can be conveniently determined.« less

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

NASA Astrophysics Data System (ADS)

Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

2018-03-01

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Predictive Models for Semiconductor Device Design and Processing

NASA Technical Reports Server (NTRS)

Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1998-01-01

The device feature size continues to be on a downward trend with a simultaneous upward trend in wafer size to 300 mm. Predictive models are needed more than ever before for this reason. At NASA Ames, a Device and Process Modeling effort has been initiated recently with a view to address these issues. Our activities cover sub-micron device physics, process and equipment modeling, computational chemistry and material science. This talk would outline these efforts and emphasize the interaction among various components. The device physics component is largely based on integrating quantum effects into device simulators. We have two parallel efforts, one based on a quantum mechanics approach and the second, a semiclassical hydrodynamics approach with quantum correction terms. Under the first approach, three different quantum simulators are being developed and compared: a nonequlibrium Green's function (NEGF) approach, Wigner function approach, and a density matrix approach. In this talk, results using various codes will be presented. Our process modeling work focuses primarily on epitaxy and etching using first-principles models coupling reactor level and wafer level features. For the latter, we are using a novel approach based on Level Set theory. Sample results from this effort will also be presented.

Optimum performance of electron beam pumped GaAs and GaN

NASA Astrophysics Data System (ADS)

Afify, M. S.; Moslem, W. M.; Hassouba, M. A.; Abu-El Hassan, A.

2018-05-01

This paper introduces a physical solution in order to overcome the damage to semiconductors, due to increasing temperature during the pumping process. For this purpose, we use quantum hydrodynamic fluid equations, including different quantum effects. This study concludes that nonlinear acoustic waves, in the form of soliton and shock-like (double layer) pulses, can propagate depending on the electron beam temperature and the streaming speed. Therefore, one can precisely tune the beam parameters in order to avoid such unfavorable noises that may lead to defects in semiconductors.

Colloidal CdSe Quantum Rings.

PubMed

Fedin, Igor; Talapin, Dmitri V

2016-08-10

Semiconductor quantum rings are of great fundamental interest because their non-trivial topology creates novel physical properties. At the same time, toroidal topology is difficult to achieve for colloidal nanocrystals and epitaxially grown semiconductor nanostructures. In this work, we introduce the synthesis of luminescent colloidal CdSe nanorings and nanostructures with double and triple toroidal topology. The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatelets. We discuss a possible mechanism of the transformation of nanoplatelets into nanorings and potential utility of colloidal nanorings for magneto-optical (e.g., Aharonov-Bohm effect) and other applications.

Using ‘particle in a box’ models to calculate energy levels in semiconductor quantum well structures

NASA Astrophysics Data System (ADS)

Ebbens, A. T.

2018-07-01

Although infinite potential ‘particle in a box’ models are widely used to introduce quantised energy levels their predictions cannot be quantitatively compared with atomic emission spectra. Here, this problem is overcome by describing how both infinite and finite potential well models can be used to calculate the confined energy levels of semiconductor quantum wells. This is done by using physics and mathematics concepts that are accessible to pre-university students. The results of the models are compared with experimental data and their accuracy discussed.

Dynamics in terahertz semiconductor microcavity: quantum noise spectra

NASA Astrophysics Data System (ADS)

Jabri, H.; Eleuch, H.

2018-05-01

We investigate the physics of an optical semiconductor microcavity containing a coupled double quantum well interacting with cavity photons. The photon statistics of the transmitted light by the cavity is explored. We show that the nonlinear interactions in the direct and indirect excitonic modes generate an important squeezing despite the weak nonlinearities. When the strong coupling regime is achieved, the noise spectra of the system is dominated by the indirect exciton distribution. At the opposite, in the weak regime, direct excitons contribute much larger in the noise spectra.

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

NASA Astrophysics Data System (ADS)

Dey, Anup; Maiti, Biswajit; Chanda Sarkar, Debasree

2014-04-01

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP, as example of III-V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

Quantum effects on compressional Alfven waves in compensated semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amin, M. R.

2015-03-15

Amplitude modulation of a compressional Alfven wave in compensated electron-hole semiconductor plasmas is considered in the quantum magnetohydrodynamic regime in this paper. The important ingredients of this study are the inclusion of the particle degeneracy pressure, exchange-correlation potential, and the quantum diffraction effects via the Bohm potential in the momentum balance equations of the charge carriers. A modified nonlinear Schrödinger equation is derived for the evolution of the slowly varying amplitude of the compressional Alfven wave by employing the standard reductive perturbation technique. Typical values of the parameters for GaAs, GaSb, and GaN semiconductors are considered in analyzing the linearmore » and nonlinear dispersions of the compressional Alfven wave. Detailed analysis of the modulation instability in the long-wavelength regime is presented. For typical parameter ranges of the semiconductor plasmas and at the long-wavelength regime, it is found that the wave is modulationally unstable above a certain critical wavenumber. Effects of the exchange-correlation potential and the Bohm potential in the wave dynamics are also studied. It is found that the effect of the Bohm potential may be neglected in comparison with the effect of the exchange-correlation potential in the linear and nonlinear dispersions of the compressional Alfven wave.« less

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Magneto-ballistic transport in GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuationsmore » and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.« less

Controlling the Properties of Matter with Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor

2017-03-22

Solar cells and photodetectors could soon be made from new types of materials based on semiconductor quantum dots, thanks to new insights based on ultrafast measurements capturing real-time photoconversion processes. Photoconversion is a process wherein the energy of a photon, or quantum of light, is converted into other forms of energy, for example, chemical or electrical. Semiconductor quantum dots are chemically synthesized crystalline nanoparticles that have been studied for more than three decades in the context of various photoconversion schemes including photovoltaics (generation of photo-electricity) and photo-catalysis (generation of “solar fuels”). The appeal of quantum dots comes from the unmatchedmore » tunability of their physical properties, which can be adjusted by controlling the size, shape and composition of the dots. At Los Alamos, the research connects to the institutional mission of solving national security challenges through scientific excellence, in this case focusing on novel physical principles for highly efficient photoconversion, charge manipulation in exploratory device structures and novel nanomaterials.« less

On-demand semiconductor single-photon source with near-unity indistinguishability.

PubMed

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Control of spin defects in wide-bandgap semiconductors for quantum technologies

DOE PAGES

Heremans, F. Joseph; Yale, Christopher G.; Awschalom, David D.

2016-05-24

Deep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and optoelectronic devices. However, the electronic spin states of certain atomic-scale defects have recently been shown to be promising quantum bits for quantum information processing as well as exquisite nanoscale sensors due to their local environmental sensitivity. In this review, we will discuss recent advances in quantum control protocols of several of these spin defects, the negatively charged nitrogen-vacancy (NV -) center in diamond and a variety of forms of the neutral divacancy (VV 0) complex in silicon carbide (SiC). These defectsmore » exhibit a spin-triplet ground state that can be controlled through a variety of techniques, several of which allow for room temperature operation. Microwave control has enabled sophisticated decoupling schemes to extend coherence times as well as nanoscale sensing of temperature along with magnetic and electric fields. On the other hand, photonic control of these spin states has provided initial steps toward integration into quantum networks, including entanglement, quantum state teleportation, and all-optical control. Electrical and mechanical control also suggest pathways to develop quantum transducers and quantum hybrid systems. In conclusion, the versatility of the control mechanisms demonstrated should facilitate the development of quantum technologies based on these spin defects.« less

Spatially indirect excitons in coupled quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Chih-Wei Eddy

2004-03-01

Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunitiesmore » for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer) 2 were observed. The spatial and energy distributions of optically active excitons were used as thermodynamic quantities to construct a phase diagram of the exciton system, demonstrating the existence of distinct phases. Optical and electrical properties of the CQW sample were examined thoroughly to provide deeper understanding of the formation mechanisms of these cold exciton systems. These insights offer new strategies for producing cold exciton systems, which may lead to opportunities for the realization of BEC in solid-state systems.« less

Novel engineered compound semiconductor heterostructures for advanced electronics applications

NASA Astrophysics Data System (ADS)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2013-05-01

We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

Semiconductor Quantum Dots for Biomedicial Applications

PubMed Central

Shao, Lijia; Gao, Yanfang; Yan, Feng

2011-01-01

Semiconductor quantum dots (QDs) are nanometre-scale crystals, which have unique photophysical properties, such as size-dependent optical properties, high fluorescence quantum yields, and excellent stability against photobleaching. These properties enable QDs as the promising optical labels for the biological applications, such as multiplexed analysis of immunocomplexes or DNA hybridization processes, cell sorting and tracing, in vivo imaging and diagnostics in biomedicine. Meanwhile, QDs can be used as labels for the electrochemical detection of DNA or proteins. This article reviews the synthesis and toxicity of QDs and their optical and electrochemical bioanalytical applications. Especially the application of QDs in biomedicine such as delivering, cell targeting and imaging for cancer research, and in vivo photodynamic therapy (PDT) of cancer are briefly discussed. PMID:22247690

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

PubMed

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Electronic structure of vitamin B12 within the framework of the Haldane-Anderson impurity model

NASA Astrophysics Data System (ADS)

Kandemir, Zafer; Mayda, Selma; Bulut, Nejat

2015-03-01

We study the electronic structure of vitamin B12 (cyanocobalamine C63H88CoN14O14P) by using the framework of the multi-orbital single-impurity Haldane-Anderson model of a transition-metal impurity in a semiconductor host. Here, our purpose is to understand the many-body effects originating from the transition-metal impurity. In this approach, the cobalt 3 d orbitals are treated as the impurity states placed in a semiconductor host which consists of the rest of the molecule. The parameters of the resulting effective Haldane-Anderson model are obtained within the Hartree-Fock approximation for the electronic structure of the molecule. The quantum Monte Carlo technique is then used to calculate the one-electron and magnetic correlation functions of this effective Haldane-Anderson model for vitamin B12. We find that new states form inside the semiconductor gap due to the on-site Coulomb interaction at the impurity 3 d orbitals and that these states become the highest occupied molecular orbitals. In addition, we present results on the charge distribution and spin correlations around the Co atom. We compare the results of this approach with those obtained by the density-functional theory calculations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Li, Yanbo; Amani, Matin

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH 3NH 3PbI 3-xBr x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamicmore » range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).« less

Rhenium ion beam for implantation into semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.

2012-02-15

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics andmore » nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.« less

Resonance energy transfer improves the biological function of bacteriorhodopsin within a hybrid material built from purple membranes and semiconductor quantum dots.

PubMed

Rakovich, Aliaksandra; Sukhanova, Alyona; Bouchonville, Nicolas; Lukashev, Evgeniy; Oleinikov, Vladimir; Artemyev, Mikhail; Lesnyak, Vladimir; Gaponik, Nikolai; Molinari, Michael; Troyon, Michel; Rakovich, Yury P; Donegan, John F; Nabiev, Igor

2010-07-14

Purple membrane (PM) from bacteria Halobacterium salinarum contains a photochromic protein bacteriorhodopsin (bR) arranged in a 2D hexagonal nanocrystalline lattice (Figure 1 ). Absorption of light by the protein-bound chromophore retinal results in pumping the protons through the PM creating an electrochemical gradient which is then used by the ATPases to energize the cellular processes. Energy conversion, photochromism, and photoelectrism are the inherent effects which are employed in many bR technical applications. bR, along with the other photosensitive proteins, is not able to deal with the excess energy of photons in UV and blue spectral region and utilizes less than 0.5% of the energy from the available incident solar light for its biological function. Here, we proceed with optimization of bR functions through the engineering of a "nanoconverter" of solar energy based on semiconductor quantum dots (QDs) tagged with the PM. These nanoconverters are able to harvest light from deep-UV to the visible region and to transfer this additionally collected energy to bR via Förster resonance energy transfer (FRET). We show that specific nanobio-optical and spatial coupling of QDs (donor) and bR retinal (acceptor) provide a means to achieve FRET with efficiency approaching 100%. We have finally demonstrated that the integration of QDs within PM significantly increases the efficiency of light-driven transmembrane proton pumping, which is the main bR biological function. This new QD-PM hybrid material will have numerous optoelectronic, photonic, and photovoltaic applications based on its energy conversion, photochromism, and photoelectrism properties.

Silicon Quantum Dots with Counted Antimony Donor Implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel Lee

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Anisotropic exchange interaction induced by a single photon in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Chiappe, G.; Fernández-Rossier, J.; Louis, E.; Anda, E. V.

2005-12-01

We investigate coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins, and excitons are treated quantum mechanically shows that a single polariton induces a sizable indirect anisotropic exchange interaction between spins. At sufficiently low temperatures strong ferromagnetic correlations show up without an appreciable increase in exciton population. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling is still significant at 1 K : spin-spin correlation around 3 for exciton occupation smaller than 0.3. We find that the interaction mediated by photon-polaritons is 10 times stronger than the one induced by a classical field for equal Rabi splitting.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Semiconductor-inspired design principles for superconducting quantum computing.

PubMed

Shim, Yun-Pil; Tahan, Charles

2016-03-17

Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective

PubMed Central

2017-01-01

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition. PMID:28972763

Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-11-01

We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

NASA Astrophysics Data System (ADS)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

Optimal antibunching in passive photonic devices based on coupled nonlinear resonators

NASA Astrophysics Data System (ADS)

Ferretti, S.; Savona, V.; Gerace, D.

2013-02-01

We propose the use of weakly nonlinear passive materials for prospective applications in integrated quantum photonics. It is shown that strong enhancement of native optical nonlinearities by electromagnetic field confinement in photonic crystal resonators can lead to single-photon generation only exploiting the quantum interference of two coupled modes and the effect of photon blockade under resonant coherent driving. For realistic system parameters in state of the art microcavities, the efficiency of such a single-photon source is theoretically characterized by means of the second-order correlation function at zero-time delay as the main figure of merit, where major sources of loss and decoherence are taken into account within a standard master equation treatment. These results could stimulate the realization of integrated quantum photonic devices based on non-resonant material media, fully integrable with current semiconductor technology and matching the relevant telecom band operational wavelengths, as an alternative to single-photon nonlinear devices based on cavity quantum electrodynamics with artificial atoms or single atomic-like emitters.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Ba2NiOsO6: a Dirac-Mott insulator with ferromagnetism near 100 K

NASA Astrophysics Data System (ADS)

Feng, Hl; Calder, S.; Ghimire, M.; Yuan, Yh; Shirako, Y.; Tsujimoto, Y.; Matsushita, Y.; Hu, Z.; Kuo, Cy; Tjeng, Lh; Pi, Tw; Soo, Yl; He, Jf; Tanaka, M.; Katsuya, Y.; Richte, M.; Yamaura, Kazunari

The ferromagnetic semiconductor Ba2NiOsO6(Tmag 100 K) was synthesized at 6 GPa and 1500 ° C. It crystallizes into a double perovskite structure [Fm-3 m; a = 8.0428(1)], where the Ni2+ and Os6+ ions are perfectly ordered at the perovskite B-site. We show that the spin-orbit coupling of Os6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >21-kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (Tmag<180 K), the spin-gapless semiconductor Mn2CoAl (Tmag 720 K), and the ferromagnetic insulators EuO (Tmag 70 K) and Bi3Cr3O11(Tmag 220 K). It is also qualitatively different from known ferrimagnetic insulator/semiconductors, which are characterized by an antiparallel spin arrangement. Our report of cubic Ba2NiOsO6 heralds a new class of FM insulator oxides, which may be useful in developing a practical magnetic semiconductor that can be employed in spintronic and quantum magnetic devices.

Semiconductor Quantum Dots for Applications to Advanced Concepts for Solar Photon Conversion to Electricity and Solar Fuels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nozik, Arthur J; Beard, Matthew C

The challenge of photoconversion research is to produce photovoltaic electricity at costs much less than those based on fossil fuels. Novel photoactive semiconductors and molecules of various types and structures are discussed for this purpose.

Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure.

PubMed

Kjaergaard, M; Nichele, F; Suominen, H J; Nowak, M P; Wimmer, M; Akhmerov, A R; Folk, J A; Flensberg, K; Shabani, J; Palmstrøm, C J; Marcus, C M

2016-09-29

Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e 2 /h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

Ballistic superconductivity in semiconductor nanowires

PubMed Central

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2017-01-01

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

PubMed

de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

2017-10-31

Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Topological approach to quantum Hall effects and its important applications: higher Landau levels, graphene and its bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Łydżba, Patrycja; Jacak, Lucjan

2017-05-01

In this paper the topological approach to quantum Hall effects is carefully described. Commensurability conditions together with proposed generators of a system braid group are employed to establish the fractional quantum Hall effect hierarchies of conventional semiconductors, monolayer and bilayer graphene structures. Obtained filling factors are compared with experimental data and a very good agreement is achieved. Preliminary constructions of ground-state wave functions in the lowest Landau level are put forward. Furthermore, this work explains why pyramids of fillings from higher bands are not counterparts of the well-known composite-fermion hierarchy - it provides with the cause for an intriguing robustness of ν = 7/3 , 8/3 and 5/2 states (also in graphene). The argumentation why paired states can be developed in two-subband systems (wide quantum wells) only when the Fermi energy lies in the first Landau level is specified. Finally, the paper also clarifies how an additional surface in bilayer systems contributes to an observation of the fractional quantum Hall effect near half-filling, ν = 1/2 .

Photon-Electron Interactions in Dirac Quantum Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaodong

The objective of this proposal was to explore the fundamental light-matter interactions in a new class of Dirac quantum materials, atomically thin transition metal dichalcogenides (TMDs). Monolayer TMDs are newly discovered two-dimensional semiconductors with direct bandgap. Due to their hexagonal lattice structure, the band edge localizes at corner of Brillouin zone, i.e. “Dirac valleys”. This gives the corresponding electron states a “valley index” (or pseudospin) in addition to the real spin. Remarkably, the valley pseudospins have circularly polarized optical selection rules, providing the first solid state system for dynamic control of the valley degree of freedom. During this award, wemore » have developed a suite of advanced nano-optical spectroscopy tools in the investigation and manipulation of charge, spin, and valley degrees of freedom in monolayer semiconductors. Emerging physical phenomena, such as quantum coherence between valley pseudospins, have been demonstrated for the first time in solids. In addition to monolayers, we have developed a framework in engineering, formulating, and understanding valley pseudospin physics in 2D heterostructures formed by different monolayer semiconductors. We demonstrated long-lived valley-polarized interlayer excitons with valley-dependent many-body interaction effects. These works push the research frontier in understanding the light-matter interactions in atomically-thin quantum materials for protentional transformative energy technologies.« less

Senior Research Fellow Wins Major International Science Award | News | NREL

Science.gov Websites

generation (MEG) in semiconductor nanocrystals, also called quantum dots, and recently found efficient MEG in silicon quantum dots. He shares the award with Stefan W. Glunz of the Fraunhofer Institute in Germany

Biosynthesis of fluorescent CdS nanocrystals with semiconductor properties: Comparison of microbial and plant production systems.

PubMed

Al-Shalabi, Zahwa; Doran, Pauline M

2016-04-10

This study investigated fission yeast (Schizosaccharomyces pombe) and hairy roots of tomato (Solanum lycopersicum) as in vitro production vehicles for biological synthesis of CdS quantum dots. Cd added during the mid-growth phase of the cultures was detoxified within the biomass into inorganic sulphide-containing complexes with the quantum confinement properties of semiconductor nanocrystals. Significant differences were found between the two host systems in terms of nanoparticle production kinetics, yield and quality. The much slower growth rate of hairy roots compared with yeast is a disadvantage for commercial scaled-up production. Nanoparticle extraction from the biomass was less effective for the roots: 19% of the Cd present in the hairy roots was recovered after extraction compared with 34% for the yeast. The overall yield of CdS quantum dots was also lower for the roots: relative to the amount of Cd taken up into the biomass, 8.5% was recovered in yeast gel filtration fractions exhibiting quantum dot properties whereas the result for hairy roots was only 0.99%. Yeast-produced CdS crystallites were somewhat smaller with diameters of approximately 2-6 nm compared with those of 4-10nm obtained from the roots. The average ratio of inorganic sulphide to Cd for the purified and size-fractionated particles was 0.44 for the yeast and 1.6 for the hairy roots. Despite the limitations associated with hairy roots in terms of culture kinetics and product yield, this system produced CdS nanoparticles with enhanced photostability and 3.7-13-fold higher fluorescence quantum efficiency compared with those generated by yeast. This work demonstrates that the choice of cellular host can have a significant effect on nanoparticle functional properties as well as on the bioprocessing aspects of biological quantum dot synthesis. Copyright © 2016 Elsevier B.V. All rights reserved.

TlBr[sub x]I[sub (1[minus]x)] photodetectors for scintillation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, K.S.; Lund, J.C.; Olschner, F.

1994-12-01

This paper reports on the evaluation of photodetectors fabricated from a ternary semiconductor, TlBr[sub x]I[sub 1[minus]x] for application in scintillation spectroscopy. These photodetectors are characterized in terms of their resistivity, charge transport parameters, quantum efficiency as a function of wavelength, and finally their performance as scintillation spectrometers. The details about TlBr[sub x]I[sub 1[minus]x] purification, crystal growth and device fabrication are also addressed.

Long range spin qubit interaction mediated by microcavity polaritons

NASA Astrophysics Data System (ADS)

Piermarocchi, Carlo; Quinteiro, Guillermo F.; Fernandez-Rossier, Joaquin

2007-03-01

Planar microcavities are semiconductor devices that confine the electromagnetic field by means of two parallel semiconductor mirrors. When a quantum well (QW) is placed inside a planar microcavity, the excitons in the QW couple to confined electromagnetic modes. In the strong-coupling regime, excitons and cavity photons give rise to new states, cavity polaritons, which appear in two branches separated by a vacuum Rabi splitting. We study theoretically the dynamics of localized spins in the QW interacting with cavity polaritons. Our calculations consider localized electron spins of shallow neutral donors in GaAs (e.g., Si), but the theory is valid for other impurities and host semiconductors, as well as to charged quantum dots. In the strong-coupling regime, the vacuum Rabi splitting introduces anisotropies in the spin coupling. Moreover, due to their photon-like mass, polaritons provide an extremely long spin coupling range. This suggests the realization of two-qubit all-optical quantum operations within tens of picoseconds with spins localized as far as hundreds of nanometers apart. [G. F. Quinteiro et al., Phys. Rev. Lett. 97 097401, (2006)].

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots.

PubMed

Francaviglia, Luca; Giunto, Andrea; Kim, Wonjong; Romero-Gomez, Pablo; Vukajlovic-Plestina, Jelena; Friedl, Martin; Potts, Heidi; Güniat, Lucas; Tütüncüoglu, Gözde; Fontcuberta I Morral, Anna

2018-04-11

Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.

Helium like impurity in CdTe/ Cd1-xMnxTe semimagnetic semiconductors under magnetic field: Dimensionality effect on electron - Electron interaction

NASA Astrophysics Data System (ADS)

Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

2017-11-01

We study the effect of magnetic field on the Coulomb interaction between the two electrons confined inside a CdTe/Cd1-xMnxTe Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD) for the composition of Mn2+ ion, x = 0.3. The two particle Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the applied magnetic field tremendously alters the Coulomb interaction of the electrons and their binding to the donor impurity by shrinking the spatial extension of the two particle wavefunction and leads to tunnelling through the barrier. The qualitative phenomenon involved in such variation of electron - electron interaction with the magnetic field has also been explained through the 3D - plot of the probability density function.

Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

PubMed

He, Yong; Zhu, Ka-Di

2017-06-20

In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

He, Yong; Zhu, Ka-Di

2017-01-01

In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction. PMID:28632165

Role of confinements on the melting of Wigner molecules in quantum dots

NASA Astrophysics Data System (ADS)

Bhattacharya, Dyuti; Filinov, Alexei V.; Ghosal, Amit; Bonitz, Michael

2016-03-01

We explore the stability of a Wigner molecule (WM) formed in confinements with different geometries emulating the role of disorder and analyze the melting (or crossover) of such a system. Building on a recent calculation [D. Bhattacharya, A. Ghosal, Eur. Phys. J. B 86, 499 (2013)] that discussed the effects of irregularities on the thermal crossover in classical systems, we expand our studies in the untested territory by including both the effects of quantum fluctuations and of disorder. Our results, using classical and quantum (path integral) Monte Carlo techniques, unfold complementary mechanisms that drive the quantum and thermal crossovers in a WM and show that the symmetry of the confinement plays no significant role in determining the quantum crossover scale n X . This is because the zero-point motion screens the boundary effects within short distances. The phase diagram as a function of thermal and quantum fluctuations determined from independent criteria is unique, and shows "melting" from the WM to both the classical and quantum "liquids". An intriguing signature of weakening liquidity with increasing temperature, T, is found in the extreme quantum regime. The crossover is associated with production of defects. However, these defects appear to play distinct roles in driving the quantum and thermal "melting". Our analyses carry serious implications for a variety of experiments on many-particle systems - semiconductor heterostructure quantum dots, trapped ions, nanoclusters, colloids and complex plasma.

Sensing the THz Field by an Array of Carbon Nanotube Quantum Wells

DTIC Science & Technology

2012-10-31

semiconductors. They are rather quasiparticles which are characterized by chirality and pseudospins. (iii) The electron transport occurs through numerous...approaches. (ii) The elementary excitations in the CNT are not mere electrons and holes as it is in regular semiconductors. They are rather quasiparticles

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

NASA Astrophysics Data System (ADS)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Advanced Space-Based Detector Research at the Air Force Research Laboratory (PREPRINT)

DTIC Science & Technology

2006-10-01

purposes. The dark backgrounds place very stringent requirements on the noise characteristics of the sensor system, resulting in FPAs that must be cooled...2.1. Quantum interference Quantum well infrared photodetectors ( QWIPs ) are based on intersubband absorption in III–V semiconductor multi-quantum well...Although considerable progress has been made in QWIPs , their relatively low quantum efficiencies constitute their greatest problem for space-based

Polariton devices and quantum fluids

NASA Astrophysics Data System (ADS)

Ballarini, D.; De Giorgi, M.; Lerario, G.; Cannavale, A.; Cancellieri, E.; Bramati, A.; Gigli, G.; Laussy, F.; Sanvitto, D.

2014-02-01

Exciton-polaritons, composite particles resulting from the strong coupling between excitons and photons, have shown the capability to undergo condensation into a macroscopically coherent quantum state, demonstrating strong non-linearities and unique propagation properties. These strongly-coupled light-matter particles are promising candidates for the realization of semiconductor all-optical devices with fast time response and small energy consumption. Recently, quantum fluids of polaritons have been used to demonstrate the possibility to implement optical functionalities as spin switches, transistors or memories, but also to provide a channel for the transmission of information inside integrated circuits. In this context, the possibility to extend the range of light-matter interaction up to room temperature becomes of crucial importance. One of the most intriguing promises is to use organic Frenkel excitons, which, thanks to their huge oscillator strength, not only sustain the polariton picture at room temperature, but also bring the system into the unexplored regime of ultra-strong coupling. The combination of these materials with ad-hoc designed structures may allow the control of the propagation properties of polaritons, paving the way towards their implementation of the polariton functionalities in actual devices for opto-electronic applications.

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

NASA Astrophysics Data System (ADS)

Pala, M. G.; Esseni, D.

2018-03-01

This paper presents the theory, implementation, and application of a quantum transport modeling approach based on the nonequilibrium Green's function formalism and a full-band empirical pseudopotential Hamiltonian. We here propose to employ a hybrid real-space/plane-wave basis that results in a significant reduction of the computational complexity compared to a full plane-wave basis. To this purpose, we provide a theoretical formulation in the hybrid basis of the quantum confinement, the self-energies of the leads, and the coupling between the device and the leads. After discussing the theory and the implementation of the new simulation methodology, we report results for complete, self-consistent simulations of different electron devices, including a silicon Esaki diode, a thin-body silicon field effect transistor (FET), and a germanium tunnel FET. The simulated transistors have technologically relevant geometrical features with a semiconductor film thickness of about 4 nm and a channel length ranging from 10 to 17 nm. We believe that the newly proposed formalism may find applications also in transport models based on ab initio Hamiltonians, as those employed in density functional theory methods.

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

PubMed Central

Chen, Jianyi; Li, Dongdong

2018-01-01

The advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Density functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width. PMID:29740600

Spin-based quantum computation in multielectron quantum dots

NASA Astrophysics Data System (ADS)

Hu, Xuedong; Das Sarma, S.

2001-10-01

In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid-state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single-spin system unless special conditions are satisfied. Our work compellingly demonstrates that a delicate synergy between theory and experiment (between software and hardware) is essential for constructing a quantum computer.

High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

PubMed

Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

2017-10-09

One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Turkulets, Yury; Shalish, Ilan

2018-01-01

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

Landau quantization effects on hole-acoustic instability in semiconductor plasmas

NASA Astrophysics Data System (ADS)

Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

2017-12-01

The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

NASA Astrophysics Data System (ADS)

Zhao, R.; Rossi, A.; Giblin, S. P.; Fletcher, J. D.; Hudson, F. E.; Möttönen, M.; Kataoka, M.; Dzurak, A. S.

2017-10-01

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of e f within a measurement uncertainty as low as 0.27 ppm.

Two-state semiconductor laser self-mixing velocimetry exploiting coupled quantum-dot emission-states: experiment, simulation and theory

PubMed Central

Gioannini, Mariangela; Dommermuth, Marius; Drzewietzki, Lukas; Krestnikov, Igor; Livshits, Daniil; Krakowski, Michel; Breuer, Stefan

2014-01-01

We exploit the coupled emission-states of a single-chip semiconductor InAs/GaAs quantum-dot laser emitting simultaneously on ground-state (λGS = 1245 nm) and excited-state (λES = 1175 nm) to demonstrate coupled-two-state self-mixing velocimetry for a moving diffuse reflector. A 13 Hz-narrow Doppler beat frequency signal at 317 Hz is obtained for a reflector velocity of 3 mm/s, which exemplifies a 66-fold improvement in width as compared to single-wavelength self-mixing velocimetry. Simulation results reveal the physical origin of this signal, the coupling of excited-state and ground-state photons via the carriers, which is unique for quantum-dot lasers and reproduce the experimental results with excellent agreement. PMID:25321809

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2002-10-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference.

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2014-02-01

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1 - xAs multiple-quantum-well semiconductor

NASA Astrophysics Data System (ADS)

Gao, Guilong; Tian, Jinshou; Wang, Tao; He, Kai; Zhang, Chunmin; Zhang, Jun; Chen, Shaorong; Jia, Hui; Yuan, Fenfang; Liang, Lingliang; Yan, Xin; Li, Shaohui; Wang, Chao; Yin, Fei

2017-11-01

We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of single-shot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional spatial resolution. A GaAs/AlxGa1 - xAs multiple-quantum-well (MQW) semiconductor with a picosecond response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer maps different polarization probe beams onto different detector locations, resulting in two frames with an approximately 9 ps temporal separation and approximately 25 lp/mm spatial resolution in the visible range.

Green synthesis of water soluble semiconductor nanocrystals and their applications

NASA Astrophysics Data System (ADS)

Wang, Ying

II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as well as high-throughput and simplicity of photolithography. Photoconductive LBL thin films are fabricated from Te nanowires. The thin film has distinctively metallic mirror-like appearance and displays strong photoconductance effect characteristic of narrow band-gap semiconductors. In-situ reduction of gold results in formation of Au nanoparticles adhering to Te nanowires, which leads to the disappearance of photoconductivity of the Te thin film. Those nanomaterials are considered for various applications, such as light emitting devices, data storage materials, biosensors, photodetectors.

Fast detection of Listeria monocytogenes through a nanohybrid quantum dot complex.

PubMed

Donoso, Wendy; Castro, Ricardo I; Guzmán, Luis; López-Cabaña, Zoraya; Nachtigall, Fabiane M; Santos, Leonardo S

2017-09-01

Listeria monocytogenes is a recognized foodborne pathogen that causes listeriosis in susceptible consumers. Currently, the detection systems for Listeria in food detect live and dead bacteria, being the viable microorganisms most relevant for their ability to cause sickness in the population at risk. For this reason, a new nanohybrid compound was developed for the optical detection of Listeria that was based on polyamidoamine dendrimers functionalized with an auxotrophic cofactor (lipoic acid), together with the coupling of fluorescent semiconductor crystals (quantum dots). The nanohybrid sensor has a detection limit for viable L. monocytogenes of 5.19 × 10 3 colony-forming units per milliliter under epifluorescence microscopy. It was specific when used among other pathogens commonly found in food.

Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodière, Jean; Lombez, Laurent, E-mail: laurent.lombez@chimie-paristech.fr; Le Corre, Alain

We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and demonstrate its potential to work as a hot carrier cell absorber. By analyzing photoluminescence spectra, the quasi Fermi level splitting Δμ and the carrier temperature are quantitatively measured as a function of the excitation power. Moreover, both thermodynamics values are measured at the QWs and the barrier emission energy. High values of Δμ are found for both transition, and high carrier temperature values in the QWs. Remarkably, the quasi Fermi level splitting measured at the barrier energy exceeds the absorption threshold of the QWs.more » This indicates a working condition beyond the classical Shockley-Queisser limit.« less

Basic modelling of transport in 2D wave-mechanical nanodots and billiards with balanced gain and loss mediated by complex potentials

NASA Astrophysics Data System (ADS)

Berggren, Karl-Fredrik; Tellander, Felix; Yakimenko, Irina

2018-05-01

Non-Hermitian quantum mechanics with parity-time (PT) symmetry is presently gaining great interest, especially within the fields of photonics and optics. Here, we give a brief overview of low-dimensional semiconductor nanodevices using the example of a quantum dot with input and output leads, which are mimicked by imaginary potentials for gain and loss, and how wave functions, particle flow, coalescence of levels and associated breaking of PT symmetry may be analysed within such a framework. Special attention is given to the presence of exceptional points and symmetry breaking. Related features for musical string instruments and ‘wolf-notes’ are outlined briefly with suggestions for further experiments.

Solid-phase supports for the in situ assembly of quantum dot-FRET hybridization assays in channel microfluidics.

PubMed

Tavares, Anthony J; Noor, M Omair; Uddayasankar, Uvaraj; Krull, Ulrich J; Vannoy, Charles H

2014-01-01

Semiconductor quantum dots (QDs) have long served as integral components in signal transduction modalities such as Förster resonance energy transfer (FRET). The majority of bioanalytical methods using QDs for FRET-based techniques simply monitor binding-induced conformational changes. In more recent work, QDs have been incorporated into solid-phase support systems, such as microfluidic chips, to serve as physical platforms in the development of functional biosensors and bioprobes. Herein, we describe a simple strategy for the transduction of nucleic acid hybridization that combines a novel design method based on FRET with an electrokinetically controlled microfluidic technology, and that offers further potential for amelioration of sample-handling issues and for simplification of dynamic stringency control.

Tunable Oscillations in Optically Injected Semiconductor Lasers With Reduced Sensitivity to Perturbations - Postprint

DTIC Science & Technology

2014-09-01

Squeezed light from injection- locked quantum well lasers ,” Phys. Rev. Lett., vol. 71, pp. 3951–3954, 1993. [30] A. E. Siegman , Lasers , 1st ed...AFRL-RY-WP-TP-2014-0297 TUNABLE OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS -POSTPRINT...OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS - POSTPRINT 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER

Fundamental Quantum 1/F Noise in Ultrasmall Semiconductor Devices and Their Optimal Design Principles

DTIC Science & Technology

1988-05-31

Hooge parameter. 2. 1 / f Noise of the Recombination Current Generated in the Depletion Region The quantum i/ f ...theory. There are two forms of quantum 11f noise . In the first place C~ and Cn4 p n to quantum 1 / f noise theory. This would yield Hooge parameters S...Fundamental Quantum 1 / f Noise in Ultrasmall S~ iodcrD’vesadOtm.Dsgn P in. 12. PERSONAL AUTHOR(S) Handel, Peter H. (Princioal investiaat r) 13a. TYPE

Effect of the Semiconductor Quantum Dot Shell Structure on Fluorescence Quenching by Acridine Ligand

NASA Astrophysics Data System (ADS)

Linkov, P. A.; Vokhmintcev, K. V.; Samokhvalov, P. S.; Laronze-Cochard, M.; Sapi, J.; Nabiev, I. R.

2018-02-01

The main line of research in cancer treatment is the development of methods for early diagnosis and targeted drug delivery to cancer cells. Fluorescent semiconductor core/shell nanocrystals of quantum dots (e.g., CdSe/ZnS) conjugated with an anticancer drug, e.g., an acridine derivative, allow real-time tracking and control of the process of the drug delivery to tumors. However, linking of acridine derivatives to a quantum dot can be accompanied by quantum dot fluorescence quenching caused by electron transfer from the quantum dot to the organic molecule. In this work, it has been shown that the structure of the shell of the quantum dot plays the decisive role in the process of photoinduced charge transfer from the quantum dot to the acridine ligand, which is responsible for fluorescence quenching. It has been shown that multicomponent ZnS/CdS/ZnS shells of CdSe cores of quantum dots, which have a relatively small thickness, make it possible to significantly suppress a decrease in the quantum yield of fluorescence of quantum dots as compared to both the classical ZnS thin shell and superthick shells of the same composition. Thus, core/multicomponent shell CdSe/ZnS/CdS/ZnS quantum dots can be used as optimal fluorescent probes for the development of systems for diagnosis and treatment of cancer with the use of anticancer compounds based on acridine derivatives.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Plasmon-induced carrier polarization in semiconductor nanocrystals.

PubMed

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V

2018-06-01

Spintronics 1 and valleytronics 2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals 3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In 2 O 3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes 11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Plasmon-induced carrier polarization in semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.

2018-06-01

Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

NASA Astrophysics Data System (ADS)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton-QD (QW) coupled system is inhibited and polariton bound states are formed within the polaritonic energy gap. A theory is also developed to study the polariton eigenenergy spectrum, polariton effective mass, and polariton spectral density of N identical semiconductor QDs (QWs) or a superlattice (SL) placed inside a III--V semiconductor. A polariton-impurity band lying within the polaritonic energy gap of the III--V semiconductor is predicted when the resonance energies of the QDs (QWs) lie inside the polaritonic energy gap. Hole-like polariton effective mass of the polariton-impurity band is predicted. It is also predicted that the spectral density of the polariton has a Lorentzian shape if the resonance energies of the QDs (QWs) lie outside the polaritonic gap.

Time-Resolved Electronic Relaxation Processes in Self-Organized Quantum Dots

DTIC Science & Technology

2005-05-16

in a quantum dot infrared photodetector ,” paper CthM11, presented at CLEO, Baltimore, 2003. K. Kim, T. Norris, J. Singh, P. Bhattacharya...nanostructures have been equally spectacular. Following the development of quantum-well infrared photodetectors in the late 1980’s and early 90’s...4]. The quantum cascade laser is of course the best known of the new devices, as it constitutes an entirely new concept in semiconductor laser

Quantum Metaphotonics

DTIC Science & Technology

2016-03-24

for and success in achieving single quantum dot vacuum Rabi splitting in 2004 (quantum strong coupling, currently 1,354 citations) [6, 7] was...Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity.” Nature 432, 200-203 (2004...7. G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors.” Nature Physics 2, 81 (2006). 8. G

Optical Properties of Fluorescent Mixtures: Comparing Quantum Dots to Organic Dyes

ERIC Educational Resources Information Center

Hutchins, Benjamin M.; Morgan, Thomas T.; Ucak-Astarlioglu, Mine G.; Wlilliams, Mary Elizabeth

2007-01-01

The study describes and compares the size-dependent optical properties of organic dyes with those of semiconductor nanocrystals or quantum dots (QDs). The analysis shows that mixtures of QDs contain emission colors that are sum of the individual QD components.

Functionalization of Cadmium Selenide Quantum Dots with Poly(ethylene glycol): Ligand Exchange, Surface Coverage, and Dispersion Stability.

PubMed

Wenger, Whitney Nowak; Bates, Frank S; Aydil, Eray S

2017-08-22

Semiconductor quantum dots synthesized using rapid mixing of precursors by injection into a hot solution of solvents and surfactants have surface ligands that sterically stabilize the dispersions in nonpolar solvents. Often, these ligands are exchanged to disperse the quantum dots in polar solvents, but quantitative studies of quantum dot surfaces before and after ligand exchange are scarce. We studied exchanging trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) ligands on as-synthesized CdSe quantum dots dispersed in hexane with a 2000 g/mol thiolated poly(ethylene glycol) (PEG) polymer. Using infrared spectroscopy we quantify the absolute surface concentration of TOP/TOPO and PEG ligands per unit area before and after ligand exchange. While 50-85% of the TOP/TOPO ligands are removed upon ligand exchange, only a few are replaced with PEG. Surprisingly, the remaining TOP/TOPO ligands outnumber the PEG ligands, but these few PEG ligands are sufficient to disperse the quantum dots in polar solvents such as chloroform, tetrahydrofuran, and water. Moreover, as-synthesized quantum dots once easily dispersed in hexane are no longer dispersible in nonpolar solvents after ligand exchange. A subtle coverage-dependent balance between attractive PEG-solvent interactions and repulsive TOP/TOPO-solvent interactions determines the dispersion stability.

A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

NASA Astrophysics Data System (ADS)

Chen, Xi; Lin, Zheng-Zhe

2018-05-01

Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuits

NASA Astrophysics Data System (ADS)

Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.

2017-09-01

Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

NASA Astrophysics Data System (ADS)

Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.

2017-09-01

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.

Bright solitons in non-equilibrium coherent quantum matter

PubMed Central

Pinsker, F.; Flayac, H.

2016-01-01

We theoretically demonstrate a mechanism for bright soliton generation in spinor non-equilibrium Bose–Einstein condensates made of atoms or quasi-particles such as polaritons in semiconductor microcavities. We give analytical expressions for bright (half) solitons as minimizing functions of a generalized non-conservative Lagrangian elucidating the unique features of inter and intra-competition in non-equilibrium systems. The analytical results are supported by a detailed numerical analysis that further shows the rich soliton dynamics inferred by their instability and mutual cross-interactions. PMID:26997892

Towards Realistic Implementations of a Majorana Surface Code.

PubMed

Landau, L A; Plugge, S; Sela, E; Altland, A; Albrecht, S M; Egger, R

2016-02-05

Surface codes have emerged as promising candidates for quantum information processing. Building on the previous idea to realize the physical qubits of such systems in terms of Majorana bound states supported by topological semiconductor nanowires, we show that the basic code operations, namely projective stabilizer measurements and qubit manipulations, can be implemented by conventional tunnel conductance probes and charge pumping via single-electron transistors, respectively. The simplicity of the access scheme suggests that a functional code might be in close experimental reach.

Confocal shift interferometry of coherent emission from trapped dipolar excitons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repp, J.; Nanosystems Initiative Munich; Center for NanoScience and Fakultät für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München

2014-12-15

We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK.

Mapping quantum yield for (Fe-Zn-Sn-Ti)Ox photoabsorbers using a high throughput photoelectrochemical screening system.

PubMed

Xiang, Chengxiang; Haber, Joel; Marcin, Martin; Mitrovic, Slobodan; Jin, Jian; Gregoire, John M

2014-03-10

Combinatorial synthesis and screening of light absorbers are critical to material discoveries for photovoltaic and photoelectrochemical applications. One of the most effective ways to evaluate the energy-conversion properties of a semiconducting light absorber is to form an asymmetric junction and investigate the photogeneration, transport and recombination processes at the semiconductor interface. This standard photoelectrochemical measurement is readily made on a semiconductor sample with a back-side metallic contact (working electrode) and front-side solution contact. In a typical combinatorial material library, each sample shares a common back contact, requiring novel instrumentation to provide spatially resolved and thus sample-resolved measurements. We developed a multiplexing counter electrode with a thin layer assembly, in which a rectifying semiconductor/liquid junction was formed and the short-circuit photocurrent was measured under chopped illumination for each sample in a material library. The multiplexing counter electrode assembly demonstrated a photocurrent sensitivity of sub-10 μA cm(-2) with an external quantum yield sensitivity of 0.5% for each semiconductor sample under a monochromatic ultraviolet illumination source. The combination of cell architecture and multiplexing allows high-throughput modes of operation, including both fast-serial and parallel measurements. To demonstrate the performance of the instrument, the external quantum yields of 1819 different compositions from a pseudoquaternary metal oxide library, (Fe-Zn-Sn-Ti)Ox, at 385 nm were collected in scanning serial mode with a throughput of as fast as 1 s per sample. Preliminary screening results identified a promising ternary composition region centered at Fe0.894Sn0.103Ti0.0034Ox, with an external quantum yield of 6.7% at 385 nm.

Thermal emitter comprising near-zero permittivity materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luk, Ting S.; Campione, Salvatore; Sinclair, Michael B.

A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.

Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement.

PubMed

Gao, Shanmin; Lu, Jun; Chen, Nan; Zhao, Yan; Xie, Yi

2002-12-21

A mild aqueous synthesis route was successfully established to synthesize well crystallized and monodisperse GaP and InP nanocrystals, which were proved to exhibit pronounced quantum confinement by room-temperature UV/Vis adsorption and photoluminescence (PL) spectra.

Shell Filling and Magnetic Anisotropy In A Few Hole Silicon Metal-Oxide-Semiconductor Quantum Dot

NASA Astrophysics Data System (ADS)

Hamilton, Alex; Li., R.; Liles, S. D.; Yang, C. H.; Hudson, F. E.; Veldhorst, M. E.; Dzurak, A. S.

There is growing interest in hole spin states in group IV materials for quantum information applications. The near-absence of nuclear spins in group IV crystals promises long spin coherence times, while the strong spin-orbit interaction of the hole states provides fast electrical spin manipulation methods. However, the level-mixing and magnetic field dependence of the p-orbital hole states is non-trivial in nanostructures, and is not as well understood as for electron systems. In this work, we study the hole states in a gate-defined silicon metal-oxide-semiconductor quantum dot. Using an adjacent charge sensor, we monitor quantum dot orbital level spacing down to the very last hole, and find the standard two-dimensional (2D) circular dot shell filling structure. We can change the shell filling sequence by applying an out-of-plane magnetic field. However, when the field is applied in-plane, the shell filling is not changed. This magnetic field anisotropy suggests that the confined hole states are Ising-like.

Quantum metrology with a single spin-3/2 defect in silicon carbide

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using the novel features of semiconductor high half-spin multiplet defects with easy-to-implement optical detection protocols. To achieve this, we use the spin- 3 / 2 silicon monovacancy deep center in hexagonal silicon carbide based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single VSi- defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. Other point defects, i.e. 3d transition metal or rare-earth impurities in semiconductors, may also provide similar opportunities in quantum sensing due to their similar high spin (S >= 3 / 2) configurations. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE PAGES

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon; ...

2017-10-16

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Manipulating Nonlinear Emission and Cooperative Effect of CdSe/ZnS Quantum Dots by Coupling to a Silver Nanorod Complex Cavity

PubMed Central

Nan, Fan; Cheng, Zi-Qiang; Wang, Ya-Lan; Zhang, Qing; Zhou, Li; Yang, Zhong-Jian; Zhong, Yu-Ting; Liang, Shan; Xiong, Qihua; Wang, Qu-Quan

2014-01-01

Colloidal semiconductor quantum dots have three-dimensional confined excitons with large optical oscillator strength and gain. The surface plasmons of metallic nanostructures offer an efficient tool to enhance exciton-exciton coupling and excitation energy transfer at appropriate geometric arrangement. Here, we report plasmon-mediated cooperative emissions of approximately one monolayer of ensemble CdSe/ZnS quantum dots coupled with silver nanorod complex cavities at room temperature. Power-dependent spectral shifting, narrowing, modulation, and amplification are demonstrated by adjusting longitudinal surface plasmon resonance of silver nanorods, reflectivity and phase shift of silver nanostructured film, and mode spacing of the complex cavity. The underlying physical mechanism of the nonlinear excitation energy transfer and nonlinear emissions are further investigated and discussed by using time-resolved photoluminescence and finite-difference time-domain numerical simulations. Our results suggest effective strategies to design active plasmonic complex cavities for cooperative emission nanodevices based on semiconductor quantum dots. PMID:24787617

Emerging technologies for high performance infrared detectors

NASA Astrophysics Data System (ADS)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

Quantum dot behavior in transition metal dichalcogenides nanostructures

NASA Astrophysics Data System (ADS)

Luo, Gang; Zhang, Zhuo-Zhi; Li, Hai-Ou; Song, Xiang-Xiang; Deng, Guang-Wei; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

2017-08-01

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Chemical Control of Charge Trapping and Charge Transfer Processes at the Organic-Inorganic Interface within Quantum Dot-Organic Complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Emily A.

Within the research program funded through the Early Career Research Award we designed complexes of colloidal semiconductor quantum dots (QDs) and organic molecules in which the interfacial chemistry controls the electronic structure and dynamics of the excitonic state of the QD. The program included two main projects; (1) investigation of the mechanisms by which organic surfactants control the quantum confinement of excitonic charge carriers; and (2) development of models for electron transfer between QDs and adsorbed molecules as a function of interfacial chemistry. This project was extremely successful in that our achievements in those two areas addressed the great majoritymore » of questions we outlined in the original proposal and answered questions I did not think to ask in that original proposal. Our work led to the discovery of “exciton delocalizing ligands”, which change the electronic structure of colloidal semiconductor nanocrystals by altering, with small synthetic modifications to their surfaces, their most defining characteristic – the quantum confinement of their excited states. It also led to detailed, quantitative descriptions of how the surface chemistry of a QD dictates, thermodynamically and kinetically, the probability of exchange of electrons between the QD and a small molecule. We used two of the three major techniques in the proposal (transient photoluminescence and transient absorption). Electrogenerated chemiluminescence was also proposed, but was too technically difficult with these systems to be useful. Instead, NMR spectroscopy emerged as a major analytical tool in our studies. With the fundamental advancements we made with this project, we believe that we can design QDs to be the next great class of visible-light photocatalysts.« less

Hybrid semiconductor nanomagnetoelectronic devices

NASA Astrophysics Data System (ADS)

Bae, Jong Uk

2007-12-01

The subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.

Solid-state-based analog of optomechanics

DOE PAGES

Naumann, Nicolas L.; Droenner, Leon; Carmele, Alexander; ...

2016-09-01

In this study, we investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron–phonon coupling. We discuss bistabilities, lasing, and phonon damping, and recover the same qualitative behaviors for the semiconductor and the optomechanical cases expected for low driving strengths. However, in contrast to the optomechanical case, distinct signatures of higher order processes arise in the semiconductor model.

Proposal to probe quantum nonlocality of Majorana fermions in tunneling experiments

NASA Astrophysics Data System (ADS)

Sau, Jay D.; Swingle, Brian; Tewari, Sumanta

2015-07-01

Topological Majorana fermion (MF) quasiparticles have been recently suggested to exist in semiconductor quantum wires with proximity induced superconductivity and a Zeeman field. Although the experimentally observed zero bias tunneling peak and a fractional ac-Josephson effect can be taken as necessary signatures of MFs, neither of them constitutes a sufficient "smoking gun" experiment. Since one pair of Majorana fermions share a single conventional fermionic degree of freedom, MFs are in a sense fractionalized excitations. Based on this fractionalization we propose a tunneling experiment that furnishes a nearly unique signature of end state MFs in semiconductor quantum wires. In particular, we show that a "teleportation"-like experiment is not enough to distinguish MFs from pairs of MFs, which are equivalent to conventional zero energy states, but our proposed tunneling experiment, in principle, can make this distinction.

Optical bistability and optical response of an infrared quantum dot hybridized to VO2 nanoparticle

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-08-01

In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.

Resonant Tunneling Spin Pump

NASA Technical Reports Server (NTRS)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Y. V.; Binder, R.; Newell, A. C.

1998-10-01

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two-particle interaction potential equivalent to the static screening approximation. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy in momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers and show how they might be used to enhance laser performance.

Hybrid Molecule-Nanocrystal Photon Upconversion Across the Visible and Near-Infrared

DTIC Science & Technology

2015-07-10

applications in solar energy, biological imaging , and data storage. In this Letter, CdSe and PbSe semiconductor nanocrystals are combined with molecular...Goldschmidt, J. C. Absolute Upconversion Quantum Yield of β-NaYF4 Doped with Er3+ and External Quantum Efficiency of Upconverter Solar Cell Devices...C. Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell . Science 2011, 334, 1530−1533. (37) Choi, J.-H

Optical Fiber Sensing Using Quantum Dots

PubMed Central

Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz

2007-01-01

Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms. PMID:28903308

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

NASA Astrophysics Data System (ADS)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

Cytotoxicity of metal and semiconductor nanoparticles indicated by cellular micromotility.

PubMed

Tarantola, Marco; Schneider, David; Sunnick, Eva; Adam, Holger; Pierrat, Sebastien; Rosman, Christina; Breus, Vladimir; Sönnichsen, Carsten; Basché, Thomas; Wegener, Joachim; Janshoff, Andreas

2009-01-27

In the growing field of nanotechnology, there is an urgent need to sensitively determine the toxicity of nanoparticles since many technical and medical applications are based on controlled exposure to particles, that is, as contrast agents or for drug delivery. Before the in vivo implementation, in vitro cell experiments are required to achieve a detailed knowledge of toxicity and biodegradation as a function of the nanoparticles' physical and chemical properties. In this study, we show that the micromotility of animal cells as monitored by electrical cell-substrate impedance analysis (ECIS) is highly suitable to quantify in vitro cytotoxicity of semiconductor quantum dots and gold nanorods. The method is validated by conventional cytotoxicity testing and accompanied by fluorescence and dark-field microscopy to visualize changes in the cytoskeleton integrity and to determine the location of the particles within the cell.

Selective control of electron and hole tunneling in 2D assembly

PubMed Central

Chu, Dongil; Lee, Young Hee; Kim, Eun Kyu

2017-01-01

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, “carristor”) with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low–power consumption electronics. PMID:28439554

Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

NASA Astrophysics Data System (ADS)

Holtkemper, M.; Reiter, D. E.; Kuhn, T.

2018-02-01

Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...control circuitry for control of electron/ nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and...coherence time of the qubit/ memory , we present as an example the integration of cryogenic superconductor components, including filters and

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, Brian W.; Hanak, Joseph J.

1986-01-01

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Direct determination of quantum efficiency of semiconducting films

DOEpatents

Faughnan, B.W.; Hanak, J.J.

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Gordon Research Conference on Crystal Growth (1990)

DTIC Science & Technology

1990-04-01

Labs, MH) 14. Cox Vapor Levitation Epitaxy of Quantum Wires and Wire-like Structures Using Laterally Propagating Surface Steps. (Bellcore, Red Bank) 15...introduced many new aspects of crystal growth, including strained layer superlattices, quantum cluster growth, and vertical zone melting of GaAs...Films 2. E. Bauser Semiconductor Liquid Phase Epitaxy: Growth and Properties of Layers and Heterostructures 3. M. L. Steigerwald Growth of Quantum

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2003-03-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference. Ref: PRL 89, 207601 (2002).

Plasmonic giant quantum dots: Hybrid nanostructures for truly simultaneous optical imaging, photothermal effect and thermometry

DOE PAGES

Karan, Niladri S.; Keller, Aaron M.; Sampat, Siddharth; ...

2015-02-09

Hybrid semiconductor–metal nanoscale constructs are of both fundamental and practical interest. Semiconductor nanocrystals are active emitters of photons when stimulated optically, while the interaction of light with nanosized metal objects results in scattering and ohmic damping due to absorption. In a combined structure, the properties of both components can be realized together. At the same time, metal–semiconductor coupling may intervene to modify absorption and/or emission processes taking place in the semiconductor, resulting in a range of effects from photoluminescence quenching to enhancement. We show here that photostable ‘giant’ quantum dots when placed at the center of an ultrathin gold shellmore » retain their key optical property of bright and blinking-free photoluminescence, while the metal shell imparts efficient photothermal transduction. The latter is despite the highly compact total particle size (40–60 nm “inorganic” diameter and <100 nm hydrodynamic diameter) and the very thin nature of the optically transparent Au shell. Furthermore, the sensitivity of the quantum dot emission to local temperature provides a novel internal thermometer for recording temperature during infrared irradiation-induced photothermal heating.« less

Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

NASA Astrophysics Data System (ADS)

Yu, Jiadong; Hao, Zhibiao; Li, Linsen; Wang, Lai; Luo, Yi; Wang, Jian; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Li, Hongtao

2017-03-01

By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers' radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE) is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

NASA Astrophysics Data System (ADS)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

PubMed Central

2011-01-01

Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

Solar cells using quantum funnels.

PubMed

Kramer, Illan J; Levina, Larissa; Debnath, Ratan; Zhitomirsky, David; Sargent, Edward H

2011-09-14

Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems.

Quantum versus classical hyperfine-induced dynamics in a quantum dota)

NASA Astrophysics Data System (ADS)

Coish, W. A.; Loss, Daniel; Yuzbashyan, E. A.; Altshuler, B. L.

2007-04-01

In this article we analyze spin dynamics for electrons confined to semiconductor quantum dots due to the contact hyperfine interaction. We compare mean-field (classical) evolution of an electron spin in the presence of a nuclear field with the exact quantum evolution for the special case of uniform hyperfine coupling constants. We find that (in this special case) the zero-magnetic-field dynamics due to the mean-field approximation and quantum evolution are similar. However, in a finite magnetic field, the quantum and classical solutions agree only up to a certain time scale t <τc, after which they differ markedly.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Classical and quantum optical correlation effects between single quantum dots: The role of the hopping photon

NASA Astrophysics Data System (ADS)

Hughes, S.; Gotoh, H.; Kamada, H.

2006-09-01

We present a theoretical study of photon-coupled single quantum dots in a semiconductor. A series of optical effects are demonstrated, including a subradiant dark resonance, superradiance, reversible spontaneous emission decay, and pronounced exciton entanglement. Both classical and quantum optical approaches are presented using a self-consistent formalism that treats real and virtual photon exchange on an equal footing and can account for different quantum dot properties, surface effects, and retardation in the dipole-dipole coupling, all of which are shown to play a non-negligible role.

Inhibition of quantum size effects from surface dangling bonds: The first principles study on different morphology SiC nanowires

NASA Astrophysics Data System (ADS)

Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Fang, Xiao-Yong; Jia, Ya-Hui; Cao, Mao-Sheng

2018-06-01

In recent years, we investigated the structure and photoelectric properties of Silicon carbide nanowires (SiCNWs) with different morphologies and sizes by using the first-principle in density functional theory, and found a phenomenon that is opposite to quantum size effect, namely, the band gap of nanowires increases with the increase of the diameter. To reveal the nature of this phenomenon, we further carry out the passivation of SiCNWs. The results show that the hydrogenated SiCNWs are direct band gap semiconductors, and the band gap decreases with the diameter increasing, which indicates the dangling bonds of the SiCNWs suppress its quantum size effect. The optical properties of SiCNWs with different diameters before and after hydrogenated are compared, we found that these surface dangling bonds lead to spectral shift which is different with quantum size effect of SiCNWs. These results have potential scientific value to deepen the understanding of the photoelectric properties of SiCNWs and to promote the development of optoelectronic devices.

Unveiling the composite structures of emissive consolidated p-i-n junction nanocells for white light emission.

PubMed

Lee, Kyu Seung; Shim, Jaeho; Lee, Hyunbok; Yim, Sang-Youp; Angadi, Basavaraj; Lim, Byungkwon; Son, Dong Ick

2018-06-08

Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)-i(RGB quantum dots)-n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence. The semiconductor RGB quantum dots, as an intrinsic material, were electrostatically bonded between functional groups of the p-type polymer organic material core surface and the n-type small molecular organic material shell surface. The ZnCdSe/ZnS and CdSe/ZnS quantum dots distributed uniformly and isotropically surrounding the polymer core which in turn was surrounded by small molecular organic materials. In the present study, we have identified the mechanisms of chemical synthesis and interactions of the p-i-n junction nanocell structure through modeling studies by DFT calculations. We have also investigated optical, structural and electrical properties along with the carrier transport mechanism of the light emitting diodes which have a single active layer of consolidated p-i-n junction nanocells for white electroluminescence.

Exotic ferromagnetism in the two-dimensional quantum material C3N

NASA Astrophysics Data System (ADS)

Huang, Wen-Cheng; Li, Wei; Liu, Xiaosong

2018-04-01

The search for and study of exotic quantum states in novel low-dimensional quantum materials have triggered extensive research in recent years. Here, we systematically study the electronic and magnetic structures in the newly discovered two-dimensional quantum material C3N within the framework of density functional theory. The calculations demonstrate that C3N is an indirect-band semiconductor with an energy gap of 0.38 eV, which is in good agreement with experimental observations. Interestingly, we find van Hove singularities located at energies near the Fermi level, which is half that of graphene. Thus, the Fermi energy easily approaches that of the singularities, driving the system to ferromagnetism, under charge carrier injection, such as electric field gating or hydrogen doping. These findings not only demonstrate that the emergence of magnetism stems from the itinerant electron mechanism rather than the effects of local magnetic impurities, but also open a new avenue to designing field-effect transistor devices for possible realization of an insulator-ferromagnet transition by tuning an external electric field.

Electronic Materials and Processing: Proceedings of the First Electronic Materials and Processing Congress Held in Conjunction with the 1988 World Materials Congress, Chicago, Illinois, USA, 24-30 September 1988

DTIC Science & Technology

1988-01-01

usually be traced to a combination of new semiconductors one on top of the other, then concepts, materials, and device principles, the process is called...example, growth techniques. New combinations of compound semiconductors such as GaAs have an materials called heterostructures can be made intrinsically...of combinations of metals, have direct energy band gaps that facilitate semiconductor, and insulators. Quantum the efficient recombination of

Quantum Cascade Lasers Modulation and Applications

NASA Astrophysics Data System (ADS)

Luzhansky, Edward

The mid-wave IR (MWIR) spectral band, extending from 3 to 5 microns, is considered to be a low loss atmospheric window. There are several spectral sub-bands with relatively low atmospheric attenuation in this region making it popular for various commercial and military applications. Relatively low thermal and solar background emissions, effective penetration through the natural and anthropogenic obscurants and eye safety add to the long list of advantages of MWIR wavelengths. Quantum Cascade Lasers are compact semiconductor devices capable of operating in MWIR spectrum. They are based on inter-subband transitions in a multiple-quantum-well (QW) hetero-structure, designed by means of band-structure engineering. The inter-subband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range of interest. Second, a cascade process in which tens of photons are generated per injected electron. This cascading process is behind the intrinsic high-power capabilities of QCLs. This dissertation is focused on modulation properties of Quantum Cascade Lasers. Both amplitude and phase/frequency modulations were studied including modulation bandwidth, modulation efficiency and chirp linearity. Research was consisted of the two major parts. In the first part we describe the theory of frequency modulation (FM) response of Distributed Feedback Quantum Cascade Lasers (DFB QCL). It includes cascading effect on the QCL's maximum modulation frequency. The "gain levering" effect for the maximum FM response of the two section QCLs was studied as well. In the second part of research we concentrated on the Pulse Position Amplitude Modulation of a single section QCL. The low complexity, low size, weight and power Mid-Wavelength Infra-Red optical communications transceiver concept is introduced. The concept was realized and tested in the laboratory environment. The resilience to atmospheric impairments are analyzed with simulated turbulence. The performance compared to typical telecom based Short Wavelength Infra-Red transceiver.

Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

NASA Astrophysics Data System (ADS)

Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

2017-12-01

Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

Producing CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1988-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1991-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Xiao; Wang, Hao; Yi, Qinghua

2015-11-16

Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefitsmore » the future development of optoelectronic nanodevices with new functionalities.« less

An investigation on the effect of impurity position on the binding energy of quantum box under electric field with pressure and temperature

NASA Astrophysics Data System (ADS)

Yilmaz, S.; Kirak, M.

2018-05-01

In the present study, we have studied theoretically the influences of donor impurity position on the binding energy of a GaAs cubic quantum box structure. The binding energy is calculated as functions of the position of impurity, electric field, temperature and hydrostatic pressure. The variational method is employed to obtain the energy eigenvalues of the structure in the framework of the effective mass approximation. It has been found that the impurity positions with electric field, pressure and temperature have an important effect on the binding energy of structure considered. The results can be used to manufacture semiconductor device application by manipulating the binding energy with the impurity positions, electric field, pressure and temperature.

Glucose biosensor based on nanocomposite films of CdTe quantum dots and glucose oxidase.

PubMed

Li, Xinyu; Zhou, Yunlong; Zheng, Zhaozhu; Yue, Xiuli; Dai, Zhifei; Liu, Shaoqin; Tang, Zhiyong

2009-06-02

A blood glucose sensor has been developed based on the multilayer films of CdTe semiconductor quantum dots (QDs) and glucose oxidase (GOD) by using the layer-by-layer assembly technique. When the composite films were contacted with glucose solution, the photoluminescence of QDs in the films was quickly quenched because the enzyme-catalyzed reaction product (H2O2) of GOD and glucose gave rise to the formation of surface defects on QDs. The quenching rate was a function of the concentration of glucose. The linear range and sensitivity for glucose determination could be adjusted by controlling the layers of QDs and GOD. The biosensor was used to successfully determine the concentration of blood glucose in real serum samples without sample pretreatment and exhibited satisfactory reproducibility and accuracy.

Interfacing a quantum dot with a spontaneous parametric down-conversion source

NASA Astrophysics Data System (ADS)

Huber, Tobias; Prilmüller, Maximilian; Sehner, Michael; Solomon, Glenn S.; Predojević, Ana; Weihs, Gregor

2017-09-01

Quantum networks require interfacing stationary and flying qubits. These flying qubits are usually nonclassical states of light. Here we consider two of the leading source technologies for nonclassical light, spontaneous parametric down-conversion and single semiconductor quantum dots. Down-conversion delivers high-grade entangled photon pairs, whereas quantum dots excel at producing single photons. We report on an experiment that joins these two technologies and investigates the conditions under which optimal interference between these dissimilar light sources may be achieved.

Frequency Stabilization of a Single Mode Terahertz Quantum Cascade Laser to the Kilohertz Level

DTIC Science & Technology

2009-04-27

analog locking circuit was shown to stabilize the beat signal between a 2.408 THz quantum cascade laser and a CH2DOH THz CO2 optically pumped...codes: (140.5965) Semiconductor lasers , quantum cascade; (140.3425) Laser stabilization; (300.3700) Linewidth; (040.2840) Heterodyne . References...Reno, “Frequency and phase - lock control of a 3 THz quantum cascade laser ,” Opt. Lett. 30, 1837-1839 (2005). 10. D. Rabanus, U. U. Graf, M. Philipp

Perspective: The future of quantum dot photonic integrated circuits

NASA Astrophysics Data System (ADS)

Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

2018-03-01

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

Electrostatic and Quantum Transport Simulations of Quantum Point Contacts in the Integer Quantum Hall Regime

NASA Astrophysics Data System (ADS)

Sahasrabudhe, Harshad; Fallahi, Saeed; Nakamura, James; Povolotskyi, Michael; Novakovic, Bozidar; Rahman, Rajib; Manfra, Michael; Klimeck, Gerhard

Quantum Point Contacts (QPCs) are extensively used in semiconductor devices for charge sensing, tunneling and interference experiments. Fabry-Pérot interferometers containing 2 QPCs have applications in quantum computing, in which electrons/quasi-particles undergo interference due to back-scattering from the QPCs. Such experiments have turned out to be difficult because of the complex structure of edge states near the QPC boundary. We present realistic simulations of the edge states in QPCs based on GaAs/AlGaAs heterostructures, which can be used to predict conductance and edge state velocities. Conduction band profile is obtained by solving decoupled effective mass Schrödinger and Poisson equations self-consistently on a finite element mesh of a realistic geometry. In the integer quantum Hall regime, we obtain compressible and in-compressible regions near the edges. We then use the recursive Green`s function algorithm to solve Schrödinger equation with open boundary conditions for calculating transmission and local current density in the QPCs. Impurities are treated by inserting bumps in the potential with a Gaussian distribution. We compare observables with experiments for fitting some adjustable parameters. The authors would like to thank Purdue Research Foundation and Purdue Center for Topological Materials for their support.

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Wu; Zhang, Yu -Yang; Chen, Jianyi

Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Densitymore » functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.« less

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

DOE PAGES

Zhou, Wu; Zhang, Yu -Yang; Chen, Jianyi; ...

2018-03-23

Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Densitymore » functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.« less

Artificially Structured Semiconductors to Model Novel Quantum Phenomena

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pinczuk, Aron; Wind, Shalom J.

Award Period: September 1st, 2013 through February 15th, 2017 Submitted to the USDOE Office of Basic Energy Sciences By Aron Pinczuk and Shalom J. Wind Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027 January 2017 Award # DE-SC0010695 ABSTRACT Research in this project seeks to design, create and study a class of tunable artificial quantum structures in order to extend the range and scope of new and exciting physical phenomena and to explore the potential for new applications. Advanced nanofabrication was used to create an external potential landscape that acts as a lattice of confinementmore » sites for electrons (and/or holes) in a two-dimensional electron gas in a high perfection semiconductor in such a manner that quantum interactions between different sites dictate the significant physics. Our current focus is on ‘artificial graphene’ (AG) in which a set of quantum dots (or sites) are patterned in a honeycomb lattice. The combination of leading edge nanofabrication with ultra-pure semiconductor materials in this project extends the frontier for small period, low-disorder AG systems, enabling the exploration of graphene physics in a semiconductor platform. TECHNICAL DESCRIPTION Contemporary condensed matter science has entered an era of discovery of new low-dimensional materials, such as graphene and other atomically thin materials, that exhibit exciting new physical phenomena that were previously inaccessible. Concurrent with the discovery and development of these new materials are impressive advancements in nanofabrication, which offer an ever-expanding toolbox for creating a myriad of high quality patterns at nanoscale dimensions. This project started about four years ago. Among its major achievements are the realizations of very small period artificial lattices with honeycomb topology in GaAs quantum wells. In our most recent work the periods of the ‘artificial graphene’ (AG) lattices extend down to 40 nm. These small periods are about three times smaller than previously reported in GaAs quantum wells. This milestone establishes a new state-of-the-art in fields of research and nanofabrication. In experiments using optical scattering methods we uncovered evidence that free electrons in the small period AG lattices display novel features that arise from the symmetry of the honeycomb lattice. These achievements create semiconductor platforms for explorations of novel states and effects that offer opportunities to create quasiparticles with tunable character. The quest for the discovery of novel quantum physics by nanofabrication of ‘artificial structures’ in semiconductor quantum structures overlaps with the development of quantum simulators. Nanopatterns were created at Columbia University by the group of co-PI Shalom Wind using a 100keV e-beam nanolithography instrument (along with associated processing) that is part of the Columbia Nano Initiative. Optical experiments were carried out in the group of PI Aron Pinczuk. GaAs/AlGaAs quantum wells(QWs) of world-class perfection that serve as electron hosts are the starting material grown by molecular beam epitaxy (MBE) by our partners Dr. Loren Pfeiffer (Princeton Univ.) and Prof. Michael Manfra (Purdue Univ.). The inductively coupled plasma reactive ion etching (ICP-RIE) was carried out at the PRISM Micro/Nano Fabrication Laboratory of Princeton University. Dr. Vittorio Pellegrini (Istituto Italiano di Tecnologia, Genoa, Italy) has contributed critical insight on this research. Two graduate students in this project Sheng Wang and Diego Scarabelli, graduated in the summer/fall of 2016. Dr. Yuliya Kuznetsova has been a postdoc in the group. The current work is led by Dr. Lingjie Du, a postdoctoral scientist that joined the group of the PI on October 15th, 2016. Since the start of this project we have focused primarily on developing protocols towards the fabrication of the artificial lattices and in the implementation of characterization methods to identify the new electron states that are created. A major milestone has been the realization of the Dirac cones that emerge in honeycomb lattices. In the next phases of this project, and as we achieve milestones, we wish to expand our experimental platform so that we will be better positioned to access emergent novel quantum behavior and phases of electrons in artificial lattices designed and fabricated with ‘exquisite’ precision. The AG lattices with greatly reduced disorder from nano-processing that we have already created demonstrate that we are poised for the next stage exploration of graphene physics and applications in semiconductor quantum structures.« less

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and superconductor-ionic hybrid technologies. As the...pulse quality and need for development of single pulses with very high quality will impact directly the coherence time of the qubit/ memory , we present

Energy spectrum and transport in narrow HgTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Germanenko, A. V., E-mail: Alexander.Germanenko@urfu.ru; Minkov, G. M.; Rut, O. E.

The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.

Semiconductor Terahertz Technology

DTIC Science & Technology

2009-06-15

is found in IJI-V quantum cascade lasers (QCLs). 1.I Brief overview of 5i-based QCL development Various groups have obtained electroluminescence from...sources and detectors of far-IR radiation in the range of 12-30 flm. These devices, especially quantum cascade lasers (QCLs) require efficient ...elements and their alloys that can be developed on Si substrates. The design work focused on the structure of the so-called quantum cascade laser

Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

NASA Astrophysics Data System (ADS)

Nagpal, Swati

2002-12-01

Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature.

Basics for the preparation of quantum dots and their interactions with living cells.

PubMed

Jiang, Xiue; Bai, Jing; Wang, Tiantian

2014-01-01

A study of the interactions between nanoparticles and living cells is invaluable in understanding the nano-biological effect and the mechanism of cellular endocytosis. Here we describe two methods for the preparation of semiconductor quantum dots with different physiochemical properties. Furthermore, we describe how to study the interaction of the two quantum dots with living HeLa cells and red blood cells with confocal microscopy.