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Sample records for ga co-doping effect

  1. Co-doping effects on luminescence and scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 scintillator

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroaki; Kamada, Kei; Kurosawa, Shunsuke; Pejchal, Jan; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2016-11-01

    Mg co-doping effects on scintillation properties of Ce:Lu1Gd2(Ga,Al)5O12 (LGGAG) were investigated. Mg 200 ppm co-doped Ce:LGGAG single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 300 nm in Mg,Ce:LGGAG which is in good agreement with previous reports. The scintillation decay times were accelerated by Mg co-doping.

  2. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    SciTech Connect

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-14

    Ab initio calculations on Eu doped (GaN){sub n} (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μ{sub B} (7μ{sub B}). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  3. Effects of doping concentration and co-doping with cerium on the luminescence properties of Gd3Ga5O12:Cr3+ for thermometry applications

    NASA Astrophysics Data System (ADS)

    Pareja, Jhon; Litterscheid, Christian; Molina, Alejandro; Albert, Barbara; Kaiser, Bernhard; Dreizler, Andreas

    2015-09-01

    The accuracy of surface temperature measurements using thermographic phosphors relies on an extensive knowledge of the temperature-dependent properties of the phosphor. This paper addresses the effects of doping concentration and co-doping with cerium on the luminescence properties of the Gd3Ga5O12:Cr3+ phosphor. High-crystallinity Gd3Ga5O12:Cr3+,Ce3+ powder samples (GGG:Cr,Ce) with different Cr3+ and Ce3+ concentrations were synthesized, and their luminescence spectra as well as their decay lifetime properties were characterized after UV laser excitation. Results revealed that the concentration quenching decreases the luminescence lifetime at concentrations above 0.5 mol% Cr3+ while the emission spectrum remains independent of the Cr3+ concentration. Co-doping with small amounts of Ce3+ improves the temperature-dependent luminescence characteristics by reducing the afterglow and producing fairly mono-exponential luminescence decays without changing the lifetime.

  4. Effect of Mg2+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd3Al2Ga3O12 crystals

    NASA Astrophysics Data System (ADS)

    Lucchini, M. T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-04-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  5. Effect of Mg2+ ions co-doping on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Babin, V.; Bohacek, P.; Grigorjeva, L.; Kučera, M.; Nikl, M.; Zazubovich, S.; Zolotarjovs, A.

    2017-04-01

    Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce3+ - doped and Ce3+, Mg2+ co-doped Gd3(Ga,Al)5O12 (GAGG) single crystals of similar composition are investigated in the 9-500 K temperature range. The Ce3+ - related luminescence spectra and the photoluminescence decay kinetics in these crystals are found to be similar. Under photoexcitation in the Ce3+ - and Gd3+ - related absorption bands, no prominent rise of the photoluminescence intensity in time is observed neither in GAGG:Ce,Mg nor in GAGG:Ce crystals. The afterglow is strongly reduced in GAGG:Ce,Mg as compared to GAGG:Ce, and the afterglow decay kinetics is much faster. Co-doping with Mg2+ results in a drastic decrease of the thermally stimulated luminescence (TSL) intensity in the whole investigated temperature range and in the appearance of a new complex Mg2+ - related TSL glow curve peak around 285 K. After irradiation in the Ce3+ - related 3.6 eV absorption band, the TSL intensity in GAGG:Ce,Mg is found to be comparable with that in the GAGG:Ce epitaxial film of similar composition. The Mg2+ - induced changes in the concentration, origin and structure of the crystal lattice defects and their influence on the scintillation characteristics of GAGG:Ce,Mg are discussed.

  6. 2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

    NASA Astrophysics Data System (ADS)

    Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

    2017-03-01

    The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

  7. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  8. Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

    NASA Astrophysics Data System (ADS)

    Ebrahimifard, Reza; Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-01-01

    Al and Ga co-doped ZnO (AGZO) thin films with different doping contents of 0.5-4 at.% were synthesized via sol-gel route using dip coating method and the results were compared to the single doped specimens Al:ZnO (AZO) and Ga:ZnO (GZO). All samples were highly transparent in visible region (T > 85%) with band gap values around 3.3 eV. Introduction of Al and Ga to the ZnO crystal structure decreased the crystallinity and reduced the particle size of the films. Electrical resistivity was investigated and engineered in this study as the main parameter. Single doped samples showed reduction of resistivity compared to the un-doped ZnO. In this regard, Ga was more efficient than Al in decreasing the electrical resistivity. Furthermore, samples with 1 at.% Al and 1 at.% Ga showed the minimum amount of electrical resistivity. Co-doping was performed with two different approaches including variable doping content (Al + Ga ≠ cte) and constant doping content (Al + Ga = 0.5, 1, and 2 at.%) for the sake of the comparison with single doped samples. Samples with Al = 1 at.% and Ga = 1 at.% showed the lowest electrical resistivity in AGZO samples of former approach. However, in latter approach the lowest resistivity was obtained in Al + Ga = 2 at.% sample. The results proved the capability of co-doped samples in optoelectronic industry regarding partially substitution of expensive Ga with Al and obtaining co-doped AGZO transparent conductive thin films with lower resistivity compared to conventional AZO thin films and also achieving commercial advantages compared to costly GZO thin films.

  9. Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers

    NASA Astrophysics Data System (ADS)

    Wang, Q. W.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-10-01

    The Erbium (Er) doped GaN is a promising gain medium for optical amplifiers and solid-state high energy lasers due to its high thermal conductivity, wide bandgap, mechanical hardness, and ability to emit in the highly useful 1.5 μm window. Finding the mechanisms to enhance the optical absorption efficiency at a resonant pump wavelength and emission efficiency at 1.5 μm is highly desirable. We report here the in-situ synthesis of the Er and Yb co-doped GaN epilayers (Er + Yb:GaN) by metal-organic chemical vapor deposition (MOCVD). It was observed that the 1.5 μm emission intensity of the Er doped GaN (Er:GaN) under 980 nm resonant pump can be boosted by a factor of 7 by co-doping the sample with Yb. The temperature dependent PL emission at 1.5 μm in the Er + Yb:GaN epilayers under an above bandgap excitation revealed a small thermal quenching of 12% from 10 to 300 K. From these results, it can be inferred that the process of energy transfer from Yb3+ to Er3+ ions is highly efficient, and non-radiative recombination channels are limited in the Er + Yb:GaN epilayers synthesized in-situ by MOCVD. Our results point to an effective way to improve the emission efficiency of the Er doped GaN for optical amplification and lasing applications.

  10. Tunable positive magnetoresistance effect of Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Jiang, Y. C.; Wu, Z. P.; Bao, W.; Xu, S. J.; Gao, J.

    2012-04-01

    Co-doped amorphous carbon (a-C:Co) films were deposited on n-type Si substrates by pulsed-laser deposition method. A positive magnetoresistance (PMR) effect has been observed after Co doped into a-C films. Such a PMR is tuned by the bias voltage and reaches a peak at a particular voltage, as observed from the Current-voltage relations of the a-C:Co/Si junctions at various magnetic fields. MR-H characteristics were further studied at the temperatures of 65 K, which showed that under the reverse electric field the a-C:Co/Si junctions had a colossal PMR (over 100%). Raman spectra results demonstrate that Co doping favors the formation of graphitic sp2 sites. The mechanism of the PMR effect is attributed to the interactions between the applied magnetic field and Co ions, which leads to the transition from sp2 sites to sp3 sites and increase the resistance.

  11. CO-doping effects on the transport and magnetic properties of FeTe

    NASA Astrophysics Data System (ADS)

    Zhu, Yanglin; Li, Li; Yang, Zhaorong; Zhang, Zhitao; Yuan, Bin; Chen, Jun; Du, Haifeng; Sun, Yuping; Zhang, Yuheng

    2016-01-01

    Here we report a systematic investigation of Co-doping effects on the magnetism and transport properties of Fe1+yTe single crystals. It is found that the anti-ferromagnetism transition temperature decreases upon Co doping, and a spin-glass like behavior emerges at low temperature. With substituting more than x=0.09 Co for Fe, both the metallic behavior and the structural transition disappear, but the density of states at Fermi-level does not change significantly. These results suggest that Co doping does not act as carrier doping but is more likely to bring in random magnetic scatters. In addition, the analysis of RH measurements reveals that the Fermi-level reconstruction is not closely related to the long rang AFM transition, which further supports for the local moment picture with frustrated character in dominating the AFM ground state of Fe1+yTe.

  12. Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

    2017-02-01

    We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

  13. Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

    PubMed Central

    Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

    2017-01-01

    We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications. PMID:28155879

  14. Interaction between Nitrogen and Sulfur in Co-Doped Graphene and Synergetic Effect in Supercapacitor

    PubMed Central

    Wang, Tao; Wang, Lu-Xiang; Wu, Dong-Ling; Xia, Wei; Jia, Dian-Zeng

    2015-01-01

    The co-doping of graphene with nitrogen and sulfur was investigated aiming at understanding their interactions with the presence of oxygen in graphene. The co-doped graphene (NS-G) was synthesized via a one-pot hydrothermal route using graphene oxide as starting material and L-cysteine, an amino acid containing both N and S, as the doping agent. The obtained NS-G with a three-dimensional hierarchical structure containing both macropores and mesopores exhibited excellent mechanical stabilities under both wet and dry conditions. As compared to N or S singly doped graphene, the co-doped sample contains significantly higher concentrations of N and S species especially pyrollic N groups. The co-doped sample considerably outperformed the singly doped samples when used as free-standing electrode in supercapacitors due to enhanced pseudocapacitance. The simultaneous incorporation of S and N species with the presence of oxygen significantly modified the surface chemistry of carbon leading to considerably higher doping levels, although directly bonding between N and S is neither likely nor detected. Hence, the synergetic effect between N and S occurred through carbon atoms in neighboring hexagonal rings in a graphene sheet. PMID:25880811

  15. Synergistic effects of F and Fe in co-doped TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhang, Yufei; Shen, Huiyuan; Liu, Yanhua

    2016-03-01

    TiO2 photocatalysts co-doped with F and Fe were synthesized by a sol-gel method. Synergistic effects of F and Fe in the co-doped TiO2 were verified by NH3 decomposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-Vis) absorption spectroscopy, and was analyzed by the simulation based on the density functional theory (DFT). The results from NH3 decomposition confirmed that the cooperation of F and Fe broadened the optical response of TiO2 to visible light region and also enhanced the photocatalytic activity of TiO2 under ultraviolet light. XRD patterns, SEM and HRTEM images showed that the co-doped samples were nanometric anatase with an average particle size of 25 nm. Co-doping with F and Fe inhibited the grain growth of TiO2 from anatase to rutile and resulted in a larger lattice defect. XPS analysis exhibited that the doped F and Fe atoms were into the TiO2 lattice. UV-Vis absorption spectra showed that its optical absorption edge was moved up to approximately 617 nm and its ultraviolet absorption was also enhanced. The DFT results indicated that the cooperation of Fe 3d and O 2p orbits narrowed the band gap of TiO2 and F 2p orbit widened the upper valence bands. The synergistic electron density around F and Fe in co-doped TiO2 was capable to enhance the photo-chemical stability of TiO2.

  16. Enhancement of thermospin effect in ZGNRs via p-n co-doping on edge

    NASA Astrophysics Data System (ADS)

    Pan, Ting-Ting; Wang, Xue-Feng; Zhai, Ming-Xing; Liu, Yu-Shen; Wu, Jian-Chun; Xu, Chen

    2016-10-01

    Electronic and thermoelectric properties are studied for ferromagnetic zigzag graphene nanoribbons (ZGNRs) co-doped by a pair of boron and nitrogen atoms on one edge. In case of the 1st nearest neighbor co-doping, the two dopants are partly neutralized by each other and the corresponding impurity states approach to the Fermi energy symmetrically from high and low energies. As a result, the electronic properties are effectively manipulated and the conductances of different spin show opposite behaviours. Over a large range from zero temperature to higher-than-room temperature, the system shows a strong spin thermopower with a spin Seebeck coefficient much bigger than the charge one. These findings suggest that doped ZGNRs can be promising materials for spintronic and thermospintronic devices.

  17. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

    SciTech Connect

    Mitchell, B.; Dierolf, V.; Lee, D.; Lee, D.; Fujiwara, Y.

    2013-12-09

    Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

  18. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

    NASA Astrophysics Data System (ADS)

    Mitchell, B.; Lee, D.; Lee, D.; Fujiwara, Y.; Dierolf, V.

    2013-12-01

    Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

  19. Effects of co-doping on ferromagnetism in (Zn,Cr)Te.

    NASA Astrophysics Data System (ADS)

    Kuroda, Shinji

    2007-03-01

    Room-temperature ferromagnetism in semiconductors has emerged as one of the most challenging topics in today's materials science and technology. Indeed, enormous research activities have so far been directed towards developing ferromagnetic semiconductors with high transition temperatures. Despite many reports claiming high-temperature ferromagnetism for a broad class of diluted magnetic semiconductors, their intrinsic nature has sometimes been controversial[1], with a lack of elaborated analysis of structural and electronic properties. Among them, Cr-doped ZnTe has been regarded as one of the promising materials of room-temperature ferromagnetism because its intrinsic nature was confirmed through magnetic circular dichroism (MCD) measurement[2]. In this presentation, we report the effect of co-doping of charge impurities on ferromagnetic properties in this material. It was found that ferromagnetism was suppressed in (Zn,Cr)Te co-doped with nitrogen (N) as an acceptor impurity[3] and was enhanced in a crystal co-doped with iodine (I) as a donor impurity[4]. In particular, the apparent Curie temperature TC of Zn1-xCrxTe with a Cr composition of x = 0.05 increased up to 300K at maximum due to I-doping, compared to TC˜30K in the undoped crystal. In the structural and compositional analysis using TEM/EDS, it was revealed that the origin of this remarkable effect of the co-doping was the variation of Cr distribution in the crystals; the Cr distribution was strongly inhomogeneous in I-doped crystals with higher TC, in contrast to an almost uniform distribution in undoped or N-doped crystals with lower TC or being paramagnetic. In the crystals of inhomogeneous distribution, Cr-rich regions with a typical size of several ten nanometers formed in the Cr-poor matrix act as ferromagnetic nanoclusters, resulting in an apparent ferromagnetic behavior of the whole crystal. These variation of the Cr uniformity can be linked to a change in the Cr charge state due to the co-doping

  20. Effects on the optical properties and conductivity of Ag-N co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Xu, Zhenchao; Hou, Qingyu; Qu, Lingfeng

    2017-01-01

    Nowadays, the studies of the effects on the optical bandgap, absorption spectrum, and electrical properties of Ag-N co-doped ZnO have been extensively investigated. However, Ag and N atoms in doped systems are randomly doped, and the asymmetric structure of ZnO is yet to be explored. In this paper, the geometric structure, stability, density of states, absorption spectra and conductivity of pure and Ag-N co-doped Zn1‑xAgxO1‑xNx(x=0.03125, 0.0417 and 0.0625) in different orientations are calculated by using plane-wave ultrasoft pseudopotential on the basis of density functional theory with GGA+U method. Results show that the volume, equivalent total energy and formation energy of the doped system increase as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases at the same doping mode. The doped systems also become unstable, and difficulty in doping. At the same concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx, the systems with Ag-N along the c-axis orientation is unstable, and doping is difficult. The optical bandgap of Ag-N co-doped systems is narrower than that of the pure ZnO. At the same doping mode, the optical bandgap of the systems with Ag-N perpendicular to the c-axis orientation becomes narrow as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases. The absorption spectra of the doped systems exhibit a red shift, and this red shift becomes increasingly significant as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases. Under the same condition, the relative hole concentrations of the doped systems increases, the hole effective mass in valence band maximum decreases, the hole mobility decreases, the ionization energy decreases, Bohr radius increases, the conductance increases and the conductivity become better. Our results may be used as a basis for the designing and preparation of new optical and electrical materials for Ag-N co-doped ZnO applied in low temperature end of temperature difference battery.

  1. The effect of LaBr3:Ce single crystal aliovalent co-doping on its mechanical strength

    NASA Astrophysics Data System (ADS)

    Benedetto, A.; Valladeau, S.; Richaud, D.; Ouspenski, V.; Gy, R.

    2015-06-01

    Lanthanum bromide cerium doped single crystals are a transparent scintillator material that offers outstanding scintillation properties with high light yield, excellent energy resolution, fast emission and excellent proportionality. Although properly packaged detectors are robust enough to withstand operating conditions during geophysical oil logging operations, the material itself is brittle and exhibits low fracture toughness. We attempted to modify the composition of the crystals through aliovalent co-doping by Ba, Ca, Hf, Sr, Zn and Zr. These elements have been added in concentrations from 100 ppm to 5000 ppm to the growth bath. Ratio of co-doping in the crystalline matrices ranged from no incorporation (for Hf, Zn, and Zr) up to 200 ppm for Sr and 10-20 ppm for Ca. The effect of the aliovalent co-doping on the mechanical properties of the crystals and in particular on their mechanical strength, hardness and toughness has been measured. As the crystals are extremely hygroscopic this demanded designing customized experiments in anhydrous environment in order to obtain reliable and accurate results. The ultimate strength has been measured by four points bending. Hardness has been measured by indentation and by the same technique we attempted to have some information on the fracture toughness. No improvement of the mechanical properties of the co-doped crystals with respect to the reference standard lanthanum bromide cerium doped could be found.

  2. Effects of F- on the optical and spectroscopic properties of Yb3+/Al3+-co-doped silica glass

    NASA Astrophysics Data System (ADS)

    Xu, Wenbin; Yu, Chunlei; Wang, Shikai; Lou, Fengguang; Feng, Suya; Wang, Meng; Zhou, Qinling; Chen, Danping; Hu, Lili; Guzik, Malgorzata; Boulon, Georges

    2015-04-01

    Yb3+/Al3+-co-doped silica glasses with different F- content were prepared in this work by sol-gel method combined with high temperature sintering. XRF, FTIR and XPS methods were used to confirm the presence of F-. The effects of F- on the optical and spectroscopic properties of these glasses have been investigated. It is worth to notice that the F-/Si4+ mass ratio equal to 9% is a significant value showing a real change in the variation trends of numerous following parameters: refractive index, UV absorption edge, absorption and emission cross sections, scalar crystal-field NJ and fluorescent lifetimes. Furthermore, introduction of F- can adjust the refractive index of Yb3+/Al3+-co-doped silica glass and it is useful for large mode area (LMA) fibers.

  3. Enhanced magnetocaloric effect in a Co-doped Heusler Mn50Ni37Co3In10 unidirectional crystal

    NASA Astrophysics Data System (ADS)

    Ren, Jian; Feng, Shutong; Fang, Yue; Zhai, Qijie; Luo, Zhiping; Zheng, Hongxing

    2016-11-01

    A high-pressure optical zone-melting technique was employed to grow a Mn-rich Heusler Mn50Ni37Co3In10 unidirectional crystal in the present study. It was found that the Co-doped Mn50Ni37Co3In10 unidirectional crystal showed a low magnetic hysteretic loss and a widened working temperature interval in the vicinity of the martensitic transformation. The inverse magnetic entropy change (∆SM) reached 7.84 Jkg-1K-1 around 237.5 K under a magnetic field change of 30 kOe, and the corresponding effective refrigeration capacity (RCeff) was about 127.2 Jkg-1. The experimental results demonstrated a high potential to develop high-performance Mn-rich Heusler Mn-Ni-In magnetocaloric materials by means of Co doping in combination with the high-pressure optical zone-melting fabrication technique.

  4. Effects of acceptor-donor complexes on electronic structure properties in co-doped TiO2: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Cai, L. L.; Yuan, X. B.; Hu, G. C.; Ren, J. F.

    2016-07-01

    We theoretically investigate the doping effects induced by impurity complexes on the electronic structures of anatase TiO2 based on the density functional theory. Mono-doping and co-doping effects are discussed separately. The results show that the impurity doping can make the band-edges shift. The induced defect levels in the band gaps by impurity doping reduce the band gap predominantly. The compensated acceptor-donor pairs in the co-doped TiO2 will improve the photoelectrochemical activity. From the calculations, it is also found that (S+Zr)-co-doped TiO2 has the ideal band gap and band edge, at the same time, the binding energy is higher than other systems, so (S+Zr)-co-doping in TiO2 is more promise in photoelectrochemical experiments.

  5. Effects of Co doping on the metamagnetic states of the ferromagnetic fcc Fe-Co alloy.

    PubMed

    Ortiz-Chi, Filiberto; Aguayo, Aarón; de Coss, Romeo

    2013-01-16

    The evolution of the metamagnetic states in the ferromagnetic face centered cubic (fcc) Fe(1-x)Co(x) alloy as a function of Co concentration has been studied by means of first-principles calculations. The ground state properties were obtained using the full-potential linear augmented plane wave method and the generalized gradient approximation for the exchange-correlation functional. The alloying was modeled using the virtual crystal approximation and the magnetic states were obtained from the calculations of the total energy as a function of the spin moment, using the fixed spin moment method. For ferromagnetic fcc Fe, the binding-energy curve shows metamagnetic behavior, with two minima corresponding to a small-volume, low-spin (LS) state and a large-volume, high-spin (HS) state, which are separated by a small energy (E(LS) ≲ E(HS)). The evolution of the magnetic moment, the exchange integral (J), and the binding-energy curve is analyzed in the whole range of Co concentrations (x). The magnetic moment corresponding to the HS state decreases monotonically from 2.6 μ(B)/atom in fcc Fe to 1.7 μ(B)/atom in fcc Co. In contrast, the exchange integral for the HS state shows a maximum at around x = 0.45. The thermal dependence of the lattice parameter is evaluated with a method based on statistical mechanics using the binding-energy curve as an effective potential. It is observed that the behavior of the lattice parameter with temperature is tuned by Co doping, from negative thermal expansion in fcc Fe to positive thermal expansion in fcc Co, through the modification of the energetics of the metamagnetic states.

  6. The synergetic effect of V and Fe-co-doping in TiO2 studied from the DFT + U first-principle calculation

    NASA Astrophysics Data System (ADS)

    Liu, Baoshun; Zhao, Xiujian

    2017-03-01

    Based on the density functional theory (DFT + U), a detailed study on the energetic, electronic, and optical properties of Fe-, V-, and Fe & V-co-doping anatase and rutile TiO2 was performed The synergetic effect of Fe & V bimetal co-doping on the optical absorption was discussed on electronic level. Two kinds of co-dopants were considered, which included edge-shared and corner-shared co-doping. It was shown that Fe and V atoms prefer to replace Ti atom in the O-rich contions than in the Ti-rich conditions. Co-doping in anatase reduces the formation energies in both cases, while the formation energies for rutile cannot be decreased. The Bader charge analysis indicates the +3 of Fe atom and +4 of V atom, and the obvious electron exchange between Fe and V atom in co-doping cases can be identified, which indicates the presence of synergetic effect induced by co-doping. The cooperation of Fe & V co-dopants was also supported by the result of projected density of states and spin charge density differences, as the hybridization of Fe3d with V3d orbitals was seen within the TiO2 forbidden band. Different from single-dopant systems, the V3d-Fe3d co-interaction leads to the formation of some spin mid-gap states, which have an obvious effect on the optical absorptions.

  7. Electrode effects in dielectric spectroscopy measurements on (Nb +In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, David; Yee, Susan; Savinov, Maxim; Nuzhnyy, Dimitri; Petzelt, Jan; Kamba, Stanislav; Prokes, Jan

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and ac conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four contact van der Pauw dc conductivity measurements and bulk conductivity values extracted from two contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature. Nserc, Czech Science Foundation (Project 15-08389S).

  8. A brief review of co-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Jingzhao; Tse, Kinfai; Wong, Manhoi; Zhang, Yiou; Zhu, Junyi

    2016-12-01

    Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

  9. Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

    SciTech Connect

    Xiong, Wen; Chen, Wensuo

    2013-12-21

    The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbands and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.

  10. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

    2015-06-01

    Polycrystalline Bi2Fe4O9 and 2% Co doped Bi2Fe4O9 were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ˜10% increase in Co doped sample with respect to pure Bi2Fe4O9.

  11. Rare-Earth Doping and Co-Doping of GaN for Magnetic and Luminescent Applications

    DTIC Science & Technology

    2010-08-16

    would not carry a magnetic moment. The neutral charge state held responsible for the magnetism by others was pointed out to be a very high energy of...was evaluated and found to be unrealistic because of the hight energy of formation of Gd on N sites. (a) Papers published in peer-reviewed journals...oriented our work toward studying point defect origins. We critically reviewed the pro- posed Ga-vacancy model and to found it could also not stand muster

  12. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator.

    PubMed

    Singh, Rahul; Shukla, K K; Kumar, A; Okram, G S; Singh, D; Ganeshan, V; Lakhani, Archana; Ghosh, A K; Chatterjee, Sandip

    2016-09-21

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

  13. The combined effect of alumina and silica co-doping on the ageing resistance of 3Y-TZP bioceramics.

    PubMed

    Samodurova, Anastasia; Kocjan, Andraž; Swain, Michael V; Kosmač, Tomaž

    2015-01-01

    The combined effect of alumina and silica co-doping on the ageing resistance of 3Y-TZP bioceramics was investigated. In order to differentiate between the distinct contributions of two dopants to the overall resistance to low-temperature degradation (LTD), specimens were prepared by infiltration of silica sol into pre-sintered 3Y-TZP pellets, produced from commercially available powders, which were alumina-free or contained 0.05 and 0.25 wt.%. After sintering, specimens were exposed to accelerated ageing in distilled water at 134°C for 6-48 h. X-ray diffraction was applied to quantify the tetragonal-to-monoclinic (t-m) phase transformation associated with the LTD, while a focused ion beam-scanning electron microscopy technique was employed to study the microstructural features in the transformed layer. The results showed that the minor alumina and/or silica additions did not drastically change the densities, grain sizes or mechanical properties of 3Y-TZP, but they did significantly reduce LTD. The addition of either alumina or silica has the potential to influence both the nucleation and the propagation of moisture-induced transformation, but in different ways and to different extents. The co-doped ceramics exhibited predominantly transgranular fracture, reflecting strong grain boundaries (limiting microcracking of the transformed layer), for alumina doping, and rounded grains with a glassy phase at multiple grain junctions (reducing internal stresses) for silica-doped material. These two additives evidently have different dominant mechanisms associated with the deceleration of LTD of 3Y-TZP, but their combination increases resistance to ageing, importantly, without reducing the fracture toughness of this popular biomaterial.

  14. Effects of the inhomogenous co doping on the magnetoresistance of Zn1-xCo(x)O epitaxial films.

    PubMed

    Ye, Shuangli; Klar, Limei; Ney, Andreas; Ney, Verena; Kammermeier, Tom; Ollefs, Katharina; Liu, Feng; Wang, Gaofeng

    2012-02-01

    A series of Zn1-xCo(x)O epitaxial films around 100 nm with nominal Co concentration from 5% to 15% was prepared by ultra high vacuum (UHV) magnetron reactive sputtering. The optical, magnetic and magneto-transport properties of this series of Zn1-xCo(x)O epitaxial films were investigated, respectively. Resonant Raman spectra indicate the high structural and crystalline quality of these Zn1-xCo(x)O (5 < or = x < or = 15%) films, and confirm a consistent correlation between the substituting Co ions content with the Co doping concentration as well. Paramagnetism, superparamagnetism and ferromagnetism with altered Curie temperature from low temperatures to above room temperatures have been observed in these films by SQUID magnetometry. The broad blocking temperature range indicates the presence of inhomogenous distribution of the magnetic nano-clusters in the superparamagnetic films. However, the magneto-transport behaviors do not strongly respond to the change of the magnetic properties from paramagnetism to ferromagnetism of these Zn1-xCo(x)O films. The lack of efficient coupling between the inhomogenous magnetic nanoclusters and the carrier system in ferromagnetic Zn1-xCo(x)O films highlights the absence of the intrinsic magnetic origins in high structural quality Zn1-xCo(x)O (5 < or = x < or = 15%) epitaxial films. On the other hand, the competition between the spin alignments and the inhomogenous local disorder effect by magnetic ions is suggested to be responsible for the carrier properties and the oberseved magnetoresistance in these Co doping Zn1-xCo(x)O (5 < or = x < or = 15%) epitaxial films.

  15. Coherent effect of Er 3+-Yb 3+ co-doping on enhanced photoluminescence properties of Al 2O 3 powders by the sol-gel method

    NASA Astrophysics Data System (ADS)

    Wang, X. J.; Lei, M. K.; Yang, T.; Cao, B. S.

    2004-08-01

    The Er 3+-Yb 3+ co-doped Al 2O 3 powders have been prepared by the sol-gel method, using the aluminium isopropoxide [Al(OC 3H 7) 3]-derived Al 2O 3 sols with the addition of erbium nitrate [Er(NO 3) 3 · 5H 2O] and ytterbium nitrate [Yb(NO 3) 3 · 5H 2O]. The phase structure, including only two crystalline types of Al 2O 3 phases, γ and θ, was obtained for the 0-1 mol% Er 3+ and 0-2 mol% Yb 3+ co-doped Al 2O 3 powders at the different sintering temperature of 800-1000 °C. The evidence for indirect pumping of Er 3+ through transfer of energy from Yb 3+ was found in the Al 2O 3 matrix material. For the 0.5 mol% Er 3+ and 0.5 mol% Yb 3+, the 1.0 mol% Er 3+ and 1.0 mol% Yb 3+ co-doped Al 2O 3 powders, the photoluminescence (PL) peak intensity at 1.533 μm in the spectra increased by a factor of about 2, and the corresponding full widths at half maximum (FWHM) was increased to about 59 nm, compared with that of the 0.5 and 1 mol% Er 3+-doped Al 2O 3 powders, respectively. At the same Er 3+-Yb 3+ co-doping concentration, the PL intensity increased with increasing the sintering temperature from 800 to 1000 °C. Coherent effect of Er 3+-Yb 3+ co-doping on enhanced PL properties of Al 2O 3 powders was observed. A proper molar ratio of 1:1 for Yb 3+ and Er 3+ led to the maximum PL intensity at the same sintering temperature.

  16. The effect of K-na co-doping on the formation and particle size of Bi-2212 phase

    NASA Astrophysics Data System (ADS)

    Kır, M. Ebru; Özkurt, Berdan; Aytekin, M. Ersin

    2016-06-01

    Superconducting K-Na co-doped Bi2Sr2KxCa1Cu1.75Na0.25Oy (x=0, 0.05, 0.1 and 0.25) ceramics are prepared by a solid-state reaction method. It is clearly determined from XRD data that the characteristic peaks of Bi-2212 phase are observed in all samples. The resistivity measurements show that Tc (onset) values is gradually increasing as K content is increased. It is also found that K-Na co-doping influence the grain sizes for Bi-2212 phase significantly. The critical current densities as a function of magnetic field have been calculated from M-H hysteresis loops of samples according to Bean's critical model, indicating that K-Na co-doping cause higher Jc values than the pure ones.

  17. Effects of rare-earth co-doping on the local structure of rare-earth phosphate glasses using high and low energy X-ray diffraction.

    PubMed

    Cramer, Alisha J; Cole, Jacqueline M; FitzGerald, Vicky; Honkimaki, Veijo; Roberts, Mark A; Brennan, Tessa; Martin, Richard A; Saunders, George A; Newport, Robert J

    2013-06-14

    Rare-earth co-doping in inorganic materials has a long-held tradition of facilitating highly desirable optoelectronic properties for their application to the laser industry. This study concentrates specifically on rare-earth phosphate glasses, (R2O3)x(R'2O3)y(P2O5)(1-(x+y)), where (R, R') denotes (Ce, Er) or (La, Nd) co-doping and the total rare-earth composition corresponds to a range between metaphosphate, RP3O9, and ultraphosphate, RP5O14. Thereupon, the effects of rare-earth co-doping on the local structure are assessed at the atomic level. Pair-distribution function analysis of high-energy X-ray diffraction data (Q(max) = 28 Å(-1)) is employed to make this assessment. Results reveal a stark structural invariance to rare-earth co-doping which bears testament to the open-framework and rigid nature of these glasses. A range of desirable attributes of these glasses unfold from this finding; in particular, a structural simplicity that will enable facile molecular engineering of rare-earth phosphate glasses with 'dial-up' lasing properties. When considered together with other factors, this finding also demonstrates additional prospects for these co-doped rare-earth phosphate glasses in nuclear waste storage applications. This study also reveals, for the first time, the ability to distinguish between P-O and P[double bond, length as m-dash]O bonding in these rare-earth phosphate glasses from X-ray diffraction data in a fully quantitative manner. Complementary analysis of high-energy X-ray diffraction data on single rare-earth phosphate glasses of similar rare-earth composition to the co-doped materials is also presented in this context. In a technical sense, all high-energy X-ray diffraction data on these glasses are compared with analogous low-energy diffraction data; their salient differences reveal distinct advantages of high-energy X-ray diffraction data for the study of amorphous materials.

  18. The effects of Co-Ti co-doping on the magnetic, electrical, and magnetodielectric behaviors of M-type barium hexaferrites

    SciTech Connect

    Guan, Yujie; Lin, Yuanbin; Zou, Liangying; Miao, Qing; Zeng, Min; Gao, Xingsen; Liu, Zhongwu; Liu, Junming

    2013-12-15

    Magnetic, electrical and magnetodielectric properties have been studied in Co-Ti co-doped M-type hexaferrite BaCo{sub x}Ti{sub x}Fe{sub 12-2x}O{sub 19} (x = 0 ∼ 4). With the incorporation of Co-Ti, both their ferromagnetic magnetization and coercivity have been greatly changed. The temperature dependent magnetization curve shows a apparent hump at around 420 K, likely in association with more complicated cycloidal spin ordering, which is closely related to ferroelectric polarization. Interestingly, a significantly enhancement in resistivity (∼3 orders in magnitude) can be obtained in co-doped samples (x > 2), which is beneficial for magnetoelectric properties. The magnetoelectric effect were examined by dielectric tunibility under external magnetic field, which shows apparent tunability up to ∼−3% for sample with x = 2 at 1T magnetic field, further supporting it is a room temperature single phase mutliferroic material.

  19. A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

    NASA Astrophysics Data System (ADS)

    Puchalska, M.; Watras, A.

    2016-06-01

    We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

  20. Effect of synergy on the visible light activity of B, N and Fe co-doped TiO2 for the degradation of MO.

    PubMed

    Xing, Mingyang; Wu, Yongmei; Zhang, Jinlong; Chen, Feng

    2010-07-01

    Single doped, co-doped and tri-doped TiO(2) with B, N and Fe are successfully synthesized by using the hydrothermal method. The samples are characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectroscopy (DRS), and X-ray photoelectron spectroscopy (XPS). The photocatalytic activities of the samples are evaluated for degradation of methyl-orange (MO, 20 mg L(-1)) in aqueous solutions under visible light (lambda > 420 nm). The results of XRD suggest that all the catalysts present anatase crystal. All the doping catalysts show higher photoactivities than pure TiO(2) under visible light irradiation. In the single nonmetal doped TiO(2), the localized dopant levels near the valence band (VB) are responsible for the enhancement of photoactivies. Fe(3+) impurity level formed under the conduction band (CB) induces the high photocatalytic activities of iron doped TiO(2). In the co-doped and tri-doped catalysts, the B 2p and N 2p acceptor states contribute to the band gap narrowing by mixing with O 2p states combined with the overlapping of the conduction band by the iron "d" orbital, resulting in improvement of the photo-performance under visible light irradiation. Iron co-doped with boron catalyst shows low photoactivity under visible light due to the absence of Fe(3+) impurity levels at the bottom of the conduction band. In addition, the XPS results indicate the presence of synergistic effects in co-doped and tri-doped catalysts, which contribute to the enhancement of photocatalytic activities.

  1. Effect of calcination temperature on the structure and visible-light photocatalytic activities of (N, S and C) co-doped TiO2 nano-materials

    NASA Astrophysics Data System (ADS)

    Lei, X. F.; Xue, X. X.; Yang, H.; Chen, C.; Li, X.; Niu, M. C.; Gao, X. Y.; Yang, Y. T.

    2015-03-01

    The (N, S and C) co-doped TiO2 samples (NSC-TiO2) were synthesized by the sol-gel method combining with the high energy ball milling method calcined at the different temperature (400-700 °C), employing butyl titanate as the titanium source and thiourea as the doping agent. The structures of NSC-TiO2 samples were characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectra (DRS), X-ray photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), thermogravimetry and differential thermal analysis (TG-DTA), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), scanning electron microscopy (SEM) and nitrogen adsorption-desorption isotherms. The photocatalytic activities were checked through the photocatalytic reduction of Cr(VI) as a model compound under visible light irradiation. The results showed that the (N, S and C) co-doping and the calcination temperature played important role on the microstructure and photocatalytic activity of the samples. According to XPS spectra, sulfur was mainly attributed to the Tisbnd Osbnd S bond; nitrogen was ascribed to the Tisbnd Osbnd N and Tisbnd N bonds; carbon was assigned to the Tisbnd Osbnd C bond in the NSC-TiO2 samples. (N, S and C) co-doped TiO2 samples calcinated at 500 °C exhibits higher photocatalytic activity than that of the other samples under visible light irradiation, which can be attributed to the synergic effect of its enhancing crystallization of anatase and (N, S and C) co-doping.

  2. Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics.

    PubMed

    Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

    2015-02-06

    The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I-V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I-V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I-V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I-V behavior of (Nb + In) co-doped TiO2 ceramics.

  3. Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

    PubMed Central

    Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

    2015-01-01

    The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I–V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I–V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I–V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I–V behavior of (Nb + In) co-doped TiO2 ceramics. PMID:25656713

  4. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  5. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

    SciTech Connect

    Simon, Roland B.; Anaya, Julian; Kuball, Martin

    2014-11-17

    The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates.

  6. Electrode effects in dielectric spectroscopy measurements on (Nb+In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, D. A.; Yee, S. M. M.; Savinov, M.; Nuzhnyy, D.; Petzelt, J.; Kamba, S.; Prokeš, J.

    2016-04-01

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and alternating current (ac) conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness, and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four-contact van der Pauw direct current conductivity measurements and bulk conductivity values extracted from two-contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature.

  7. Effect of (Nd, Ni) co-doped on the multiferroic and photocatalytic properties of BiFeO{sub 3}

    SciTech Connect

    Vanga, Pradeep Reddy; Mangalaraja, R.V.; Ashok, M.

    2015-12-15

    Highlights: • Sol–gel synthesis. • Saturation magnetization and ferroelectricity increases in Ni co-doped samples. • Conduction mechanism is different in Nd doped and (Nd, Ni) co-doped samples. • Samples show good photocatalytic activity in the presence of H{sub 2}O{sub 2}. - Abstract: Bi{sub 0.95}Nd{sub 0.05}Fe{sub 1−x}Ni{sub x}O{sub 3} (x = 0, 0.01, 0.03 and 0.05) samples are synthesized by solgel method. The phase and crystal structure of the samples are confirmed by X-ray diffraction studies, Rietveld refinement is performed to calculate the structural parameters. The reflectance spectra show bands in UV and visible region and the optical band gap is calculated using Kulbeka–Munk function. The magnetization and leakage current density are strongly influenced by doping. Different conduction mechanisms are observed in Nd doped and Ni co-doped samples. All the samples exhibit ferroelectric nature at various frequencies. Photocatalytic activities of the samples are determined by the degradation of methylene blue dye in the presence of visible light and H{sub 2}O{sub 2} which shows samples are good photo-Fenton like catalyst.

  8. Reversible photo-bleaching effect in a bismuth/erbium co-doped optical fiber under 830  nm irradiation.

    PubMed

    Ding, Mingjie; Wei, Shuen; Luo, Yanhua; Peng, Gang-Ding

    2016-10-15

    We observed photo-bleaching in a bismuth/erbium co-doped optical fiber (BEDF) under 830 nm irradiation. As a result of the photo-bleaching, the absorption at 814 nm and the near-infrared luminescence at 1420 nm are decreased, indicating that the silicon-based bismuth active center (BAC-Si) in a BEDF is bleached in the process. We further found that the photo-bleaching is reversible under room temperature. This is the first time that the BAC-Si could be bleached under 830 nm irradiation, and the photo-bleaching is reversible. The underlying mechanism of the reversible photo-bleaching effect is discussed.

  9. Experimental investigation of radiation effect on erbium-ytterbium co-doped fiber amplifier for space optical communication in low-dose radiation environment.

    PubMed

    Ma, Jing; Li, Mi; Tan, Liying; Zhou, Yanping; Yu, Siyuan; Ran, Qiwen

    2009-08-31

    High power erbium-ytterbium co-doped fiber amplifier (EYDFA) has been radiated to the dose of 50 krad at the dose rate of 40 rad/s. Some key parameters have been measured to investigate the radiation effect on the EYDFA for space optical communication. Considering the dose of 50 krad is big enough to the most of low-dose radiation environment, these experimental results will be a good reference for the low-dose inter-satellite optical communication designers.

  10. Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases

    NASA Astrophysics Data System (ADS)

    Chen, Chao; Song, Kun; Bai, Wei; Yang, Jing; Zhang, Yuanyuan; Xiang, Pinghua; Qin, Muyang; Tang, Xiaodong; Chu, Junhao

    2016-12-01

    Aurivillius Bi5Ti3-2xFe1+xNbxO15 (BTFNO, x = 0.1, 0.2, 0.3, and 0.4) phases were prepared by solid state reaction method. The structures and dielectric responses were studied, and especially the effects of Nb with a higher valence and more Fe co-doping on the magnetic and piezoelectric properties were addressed in detail. The BTFNO samples were well crystallized with no detectable impurities, and plate-like microstructures with various sizes demonstrate the typical characteristics of bismuth-layer Aurivillius materials. It is found that a dielectric loss peak appears in the Nb and Fe co-doped Bi5Ti3FeO15 (BTFO) ceramics, and it has a shift towards a lower frequency with increasing the Nb doping contents. Furthermore, antiferromagnetic long-range magnetic order is improved with the introduction of Nb and more Fe co-doping. And compared with that of the parent BTFO forms, a clear discrepancy, which is indicative of a super-paramagnetic behavior, of the magnetization vs. temperature curves in zero-field cooling and field cooling cases is observed by the introduction of the Nb and more Fe ions. More interestingly, the introduction of Nb and more Fe ions can suppress the preferred c-axis growth while promoting the a-/b-axis growth of the plate-like grains, and thus favors the piezoelectric behaviors of the BTFO Aurivillius phases along the growth orientation.

  11. Study of synergistic effect of Sc and C co-doping on the enhancement of visible light photo-catalytic activity of TiO2

    NASA Astrophysics Data System (ADS)

    Nasir, Muhammad; Lei, Juying; Iqbal, Waheed; Zhang, Jinlong

    2016-02-01

    Scandium and carbon co-doped TiO2 catalyst was prepared through a simple sol-gel synthesis method by using scandium nitrate as scandium dopant precursor, glucose as carbon precursor and tetrabutyl orthotitanate as titanium precursor and calcined them at 450 °C for 3 h. The characterizations of the prepared samples were accomplished through X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence spectroscopy (PL), Fourier transformation infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET). The X-ray diffraction results of the samples showed the decrease in the crystal size of the sample with the subsequent increase in the specific surface area as shown by Brunauer-Emmett-Teller. The UV-visible diffuse reflectance spectroscopy displayed the blue shift in the absorption together with the photoluminescence spectroscopy revealed the decrease in the recombination of electrons and holes by the addition of the scandium and then after the certain optimum value, the further increase of the scandium further increased the recombination of electrons and holes. The photo-catalytic activity of the samples was investigated with the help of photo-catalytic degradation of Acid orange 7 under visible light irradiation. The degradation of Acid orange 7 was highly increased for the Sc and C co-doped samples compared to the single C doped sample. And the sample 0.2 Sc/C-TiO2 had the maximum increase. The enhanced photo-catalytic performance was due the decrease of the crystal size, increase of the surface area, increase in the surface hydroxyl groups, and increase of the lifetime of the electrons and holes because of the synergistic effect of the Sc and C co-doping in TiO2.

  12. Effect of co-doping Tm{sup 3+} ions on the emission properties of Dy{sup 3+} ions in tellurite glasses

    SciTech Connect

    Sasikala, T.; Rama Moorthy, L.; Mohan Babu, A.; Srinivasa Rao, T.

    2013-07-15

    The present work reports the absorption, photoluminescence and decay properties of singly doped Dy{sup 3+} and co-doped Dy{sup 3+}/Tm{sup 3+} ions in TeO{sub 2}+ZnO+K{sub 2}O+CaO (TZKC) glasses prepared by the melt quenching technique. The glassy nature of the host glass has been confirmed by X-ray diffraction analysis and the primary vibrational modes were determined from the Raman spectrum. Judd–Ofelt (JO) analysis has been used to calculate the radiative transition rates, branching ratios and radiative lifetime of the emitting {sup 4}F{sub 9/2} state. The effect of co-doping of different concentrations of Tm{sup 3+} ions on the emission properties of Dy{sup 3+} ions has been investigated. The decay profiles of the {sup 4}F{sub 9/2} level were fitted to double exponential as well as Inokuti–Hirayama (IH) model to determine the energy transfer rates between Dy{sup 3+} and Tm{sup 3+} ions. The energy transfer rates found to increase with the increase of Tm{sup 3+} ions concentration. The chromaticity coordinates and color purity of the emitted light for all glasses were determined. - Graphical abstract: The graphical abstract shows the emission spectra of Dy{sup 3+}, Tm{sup 3+} and Dy{sup 3+}/Tm{sup 3+} co-doped TZKC glasses recorded by exciting at 355 nm wavelength. - Highlights: • Zinc tellurite glasses doped with Dy{sup 3+}, Tm{sup 3+} and Dy{sup 3+}/Tm{sup 3+} ions were prepared. • XRD, DTA and Raman spectral measurements were recorded to know the nature of host. • Energy transfer occurs from Dy{sup 3+} ions to Tm{sup 3+} ions. • The color purity of the emitted light was determined.

  13. Magnetic properties of gadolinium and carbon co-doped gallium nitride

    NASA Astrophysics Data System (ADS)

    Syed Kaleemullah, N.; Ramsubramanian, S.; Mohankumar, R.; Munawar Basha, S.; Rajagopalan, M.; Kumar, J.

    2017-01-01

    Investigations have been carried out to study the ferromagnetic properties of Gadolinium (Gd) Carbon (C) co-doped wurtzite Gallium Nitride (GaN) using full-potential linear augmented plane wave (FP-LAPW) method within the density functional theory. The system shows half-metallic nature when single Gd is substituted in Ga36N36 supercell. The presence of carbon in GaN supercell is found to generate weak magnetic moment (Ms) in the neighbouring atoms. When Carbon is codoped in the Gd-GaN, it increased the total magnetic moment of the system (Mtot). The cause of ferromagnetism in the Gd and C co-doped GaN has been explained by Zener's p-d exchange mechanism. The role of defects in the magnetic property of this system is also investigated. The results indicate the gallium vacancy influences the magnetic moment of the Gd and C codoped GaN more than the nitrogen vacancy. The presence of holes is effective than electrons in achieving the ferromagnetism in the considered system.

  14. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    NASA Astrophysics Data System (ADS)

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-07-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres.

  15. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    PubMed Central

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  16. Effects of Mg-codoping on luminescence and scintillation properties of Ce doped Lu3(Ga,Al)5O12 single crystals

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroaki; Kamada, Kei; Pejchal, Jan; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2017-03-01

    Effects of Mg co-doping on scintillation properties of Ce:Lu3(Ga,Al)5O12 (LGAG) were investigated. Mg 200 ppm co-doped Ce:LGAG single crystals were prepared by micro pulling down method. Absorption and radioluminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 340 nm in Mg,Ce:LGAG which is in good agreement with previous reports for other garnet-based crystals. The scintillation decay time showed the tendency to be accelerated and the light yield was enhanced by Mg co-doping.

  17. Effect of B2O3 on the spectroscopic properties in Er3+/Ce3+ co-doped tellurite-niobium glass

    NASA Astrophysics Data System (ADS)

    Yin, Dan-dan; Zheng, Shi-chao; Qi, Ya-wei; Peng, Sheng-xi; Zhou, Ya-xun

    2013-09-01

    The high phonon energy oxide of B2O3 is introduced into the Er3+/Ce3+ co-doped tellurite-niobium glasses with composition of TeO2-Nb2O5-ZnO-Na2O. The absorption spectra, 1.53 μm band fluorescence spectra, fluorescence lifetime and Raman spectra of Er3+ in glass samples are measured together with the calculations of Judd-Ofelt spectroscopic parameter, stimulated emission and absorption cross-sections, which evaluate the effect of B2O3 on the 1.53 μm band spectroscopic properties of Er3+. It is shown that the introduction of an appropriate amount of B2O3 can further improve the 1.53 μm band fluorescence intensity through an enhanced phonon-assisted energy transfer (ET) between Er3+/Ce3+ ions. The results indicate that the prepared Er3+/Ce3+ co-doped tellurite-niobium glass with an appropriate amount of B2O3 is a potential gain medium for the 1.53 μm bandbroad erbium-doped fiber amplifier (EDFA).

  18. Control of mean ionic radius at Ca site by Sr co-doping for Ce doped LiCaAlF6 single crystals and the effects on optical and scintillation properties

    NASA Astrophysics Data System (ADS)

    Yokota, Yuui; Yamaji, Akihiro; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

    2014-10-01

    Sr co-doped Ce:LiCaAlF6 [Ce:Li(Ca,Sr)AlF6] crystals with various Ca/Sr ratios were grown by a micro-pulling-down (μ-PD) method and effects of Sr co-doping on crystal structure, chemical composition, optical and scintillation properties for Ce:LiCaAlF6 crystals were investigated as a neutron scintillator. High transparent Ce2%:Li(Ca,Sr)AlF6 crystals with 2% and 5% Sr contents were obtained while Ce2%:Li(Ca,Sr)AlF6 crystals with 10% and 20% Sr contents included milky parts in the crystals. a- and c-axis lengths of Ce:Li(Ca,Sr)AlF6 phase systematically increased with an increase of Sr content. In addition to the emission at 284 and 308 nm from Ce3+ ion, emission peaks at 367 nm appeared by Sr co-doping.

  19. Trap depth and color variation of Ce3+-Cr3+ co-doped Gd3(Al,Ga)5O12 garnet persistent phosphors

    NASA Astrophysics Data System (ADS)

    Asami, Kazuki; Ueda, Jumpei; Tanabe, Setsuhisa

    2016-12-01

    Persistent luminescent properties in Ce3+-Cr3+ codoped Gd3Al5-xGaxO12 garnet (GAGG:Ce-Cr) solid solution have been investigated. The persistent luminescent color is shifted from orange to yellowish green with increasing Ga content because Ce3+: 5d level splitting becomes much weaker. The depth of electron trap introduced by Cr codoping was estimated from the intense thermoluminescence glow peak by the initial rise method. The trap depth decreases from 0.56 eV to 0.29 eV with increasing Ga content. The shift can be explained by downshift of bottom of conduction band. From the persistent luminescence decay curve measurement after ceasing 450 nm blue illumination, the samples with x = 2.5 exhibited the longest persistent luminescence for 405 min until the luminance becomes 2 mcd/m2 in GAGG:Ce-Cr phosphors.

  20. Effect of co doping to the optical properties of ZnO:Co Thin films deposited on glass substrate by sol-gel spray coating technique

    NASA Astrophysics Data System (ADS)

    Marito Siagian, Sinta; Sutanto, Heri; Permatasari, Anes

    2017-01-01

    This study aims are to analyze the effect of cobalt doping concentration to the optical properties ZnO:Co thin films deposited by using sol-gel spray coating technique. Deposition of ZnO and ZnO:Co thin films has been successfully formed on a glass substrate using sol-gel method of spray coating technique with a variation of doping Co as much as 3%, 5%, 7%, 9%, and 11%. Solution of ZnO:Co synthesized by mixing zinc acetate dehydrate (Zn (COOCH3)2.2H2O into a isopropanol ((CH3)2CHOH) then monoethanolamine (MEA) and cobalt nitrate are added as a dopant at room temperature, then ZnO:Co sprayed on a glass substrate that has been heated at a temperature of 450°C. A thin film further characterized using spectrophotometer Uv-Vis to determine the value of absorbance and transmittance. Energy band gap was determined by using tauc plot that uses the absorbance value. The results show that there has been a difference in the value of the Energy band gap of ZnO with and without of Co doping. The addition of Co doping causes the decrease of small energy band gap. The magnitude of the energy band gap of thin films of ZnO is 3.337 eV and ZnO:Co 3% is 3.129 eV. Thin film that has narrower band gap was applied for material photocatalyst

  1. Effect of Er3+ and Yb3+ co-doping on the performance of a ZnO-based DSSC

    NASA Astrophysics Data System (ADS)

    Tsege, Ermias Libnedengel; Vu, Hong Ha Thi; Atabaev, Timur Sh.; Kim, Hyung-Kook; Hwang, Yoon-Hwae

    2016-06-01

    Zinc-oxide (ZnO) nanoparticles (NPs) co-doped with different concentrations of rare-earth ions of erbium and ytterbium, (ZnO: Er3+, Yb3+) were synthesized for applications to ZnO-based dye sensitized solar cells (DSSC). The composite NPs used for the photoelectrode (PE) were synthesized using a simple co-precipitation technique. X-ray diffraction and scanning electron microscopy measurements on the prepared samples revealed a single phase wurzite ZnO powder with approximate sizes in the range from 15 to 20 nm. Photoluminescence (PL) measurements confirmed that the synthesized composite NPs had a good up-conversion (UPC) property. The prepared powders were directly used to make PEs for DSSCs. The photovoltaic efficiency of the DSSCs was enhanced compared to that of pure ZnO-based DSSCs. Particularly, the PE made up of ZnO: Er3+, Yb3+ NPs with 4 wt% of Er3+ and Yb3+ generates a short-circuit current density ( J sc ) of 4.794 mA·cm -2 and an open circuit voltage ( V oc ) of 0.602 V with an efficiency ( η) of 1.58%. The result indicates a 48.4% J sc improvement compared to a pure ZnO PE-based DSSC. The photocurrent improvement is due to an increase in the light-harvesting capacity of the PEs attained through the UPC property of ZnO: Er3+, Yb3+ NPs. As confirmed by PL and electrochemical impedance spectra (EIS), the use of ZnO: Er3+,Yb3+ NPs as PEs for DSSCs enhances charge concentration and transport as a result of n-type doping. However, all ZnO: Er3+, Yb3+ NP based PEs exhibited a lower V oc as a result of a down shift in the Fermi energy, which affects the overall efficiency of the cell.

  2. Effect of photocatalytic reduction of carbon dioxide by N-Zr co-doped nano TiO2.

    PubMed

    Zhang, Ru; Wang, Li; Kang, Zhuo; Li, Qiang; Pan, Huixian

    2017-01-04

    Modified sol-gel method was adopted to prepare TiO2, Zr-TiO2 and N/Zr-TiO2 composite catalyst. The as-synthesized photocatalysts were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Brunner- Emmet- Teller measurement and UV-Vis diffuse reflectance spectroscopy. And the photocatalytic performance toward CO2 reduction was evaluated under ultraviolet light. The catalyst particles were demonstrated in the nanometer level size. When N and Zr are co-doped, on the one hand, Ti(4+) can be replaced by Zr4 +, which leads to lattice distortion and inhibits electron-hole recombination. On the other hand, N enters into TiO2 lattice gap to form O-Ti-N bond structure, and partial Ti(4+) are reduced to Ti(3+). Compared with pristine TiO2, the specific surface area and the band gap of N/Zr-TiO2 were improved and reduced, respectively. The N and Zr synergistically contribute to the obviously strengthened absorption intensity in visible region, as well as significantly improved photocatalytic activity. In the gas phase reactor, when the calcination temperature was 550°C, 0.125N/0.25Zr-TiO2 composite performed the highest photocatalytic activity UV irradiation for 8 h, and the corresponding CH4 yield was 11.837 µmol/g, which was 87.8% higher than that of pristine TiO2. For the visible light, the CH4 yield was 9.003 µmol/g after 8 h irradiation, which was 83.9% higher than that of pristine TiO2.

  3. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Mohapatra, S. R.; Sahu, B.; Singh, A. K.; Kaushik, S. D.

    2015-06-24

    Polycrystalline Bi{sub 2}Fe{sub 4}O{sub 9} and 2% Co doped Bi{sub 2}Fe{sub 4}O{sub 9} were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ∼10% increase in Co doped sample with respect to pure Bi{sub 2}Fe{sub 4}O{sub 9}.

  4. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Hsing; Chang, Chiao-Lu

    2016-05-01

    ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al2O3 and 1.5 wt% ZnF2 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV-vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10-4 to 2.88 × 10-4 Ω-cm as the substrate temperature increased from RT to 200 °C due to the increased carrier concentration and Hall mobility. The optical transmittances of all the AFZO thin films were over 92% in the wavelength range of 400-800 nm regardless of substrate temperature. The blue-shift of absorption edge accompanied the rise of the optical band gap, which conformed to the Burstein-Moss effect. The developed AFZO thin films are suitable as transparent conducting electrodes for various optoelectronic

  5. Thermoelectric Properties of ZnO Ceramics Co-Doped with Al and Transition Metals

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroyuki; Chonan, Yasunori; Oda, Manabu; Komiyama, Takao; Aoyama, Takashi; Sugiyama, Shigeaki

    2011-05-01

    The effect of co-doping with transition metals (Fe, Ni, and Sm) on the thermoelectric properties of Al-doped ZnO (AZO) ceramics was studied. The electrical conductivity σ of AZO was significantly (12%) increased by Ni co-doping, while an unfavorable deterioration in σ was observed for Fe- or Sm-co-doped AZO. Hall-effect measurements indicated that the electron mobility of AZO decreased due to co-doping in all samples. Only the Ni-co-doped AZO sample showed significant enhancement in electron density, resulting in its black color. The thermal conductivity κ decreased drastically due to Ni or Sm co-doping of AZO, while only a small change was observed for Fe co-doping of AZO. The κ value at 1073 K for Ni-co-doped AZO was 77% of that for AZO. A dimensionless figure of merit ZT = 0.126 was attained at 1073 K for Ni-co-doped AZO, representing an improvement over that of conventional AZO by a factor of 1.50.

  6. Effective visible light-active boron and europium co-doped BiVO4 synthesized by sol-gel method for photodegradion of methyl orange.

    PubMed

    Wang, Min; Che, Yinsheng; Niu, Chao; Dang, Mingyan; Dong, Duo

    2013-11-15

    Eu-B co-doped BiVO4 visible-light-driven photocatalysts have been synthesized using the sol-gel method. The resulting materials were characterized by a series of joint techniques, including XPS, XRD, SEM, BET, and UV-vis DRS analyses. Compared with BiVO4 and B-BiVO4 photocatalysts, the Eu-B-BiVO4 photocatalysts exhibited much higher photocatalytic activity for methyl orange (MO) degradation under visible light irradiation. The optimal Eu doping content is 0.8 mol%. It was revealed that boron and europium were doped into the lattice of BiVO4 and this led to more surface oxygen vacancies, high specific surface areas, small crystallite size, a narrower band gap and intense light absorbance in the visible region. The doped Eu(III) cations can help in the separation of photogenerated electrons. The synergistic effects of boron and europium in doped BiVO4 were the main reason for improving visible light photocatalytic activity.

  7. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOEpatents

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  8. Characterization and photocatalytic activities of C, N and S co-doped TiO(2) with 1D nanostructure prepared by the nano-confinement effect.

    PubMed

    Dong, Fan; Zhao, Weirong; Wu, Zhongbiao

    2008-09-10

    A novel method was developed for preparing high specific surface area (156.2 m(2) g(-1)) one-dimensional TiO(2) nanostructures co-doped with C, N and S by the nano-confinement effect. A nonmetal doping source (thiourea) was first intercalated into the inner space of H-titanate nanotubes prepared by the hydrothermal method, and then calcined at 450 °C for 2 h in air. The as-prepared C, N and S co-doped TiO(2) nanowires exhibited high visible light and enhanced UV-vis activities in photocatalytic degradation of toluene in the gas phase. The samples were characterized by x-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, fast Fourier transform analysis, x-ray photoelectron spectroscopy, UV-vis diffuse reflectance spectra and photoluminescence. The results indicated that the anatase nanowires grew along the [101] direction. Doping TiO(2) nanowires with C, N and S could not only broaden the light adsorption spectra into the visible region (400-600 nm), but also inhibit the recombination of photo-induced carriers. A mechanism is proposed to elucidate the nano-confinement effect of H-titanate nanotubes in the formation of C, N and S co-doping. Based on this mechanism, the effect of C, N and S co-doping on the band structure of TiO(2) nanowires is also discussed.

  9. Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be2+ as co-dopant

    PubMed Central

    Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-jeong; Jang, Jum Suk

    2016-01-01

    For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn4+ and Be2+ dopants into hematite (α–Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm2) compared to pristine α–Fe2O3 (0.7 mA/cm2), and Sn4+ mono-doped α-Fe2O3 photoanodes (1.0 mA/cm2). From first-principles calculations, we found that Sn4+ doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn4+-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be2+ was co-doped with Sn4+-doped α–Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure. PMID:27005757

  10. Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be(2+) as co-dopant.

    PubMed

    Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-Jeong; Jang, Jum Suk

    2016-03-23

    For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn(4+) and Be(2+) dopants into hematite (α-Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm(2)) compared to pristine α-Fe2O3 (0.7 mA/cm(2)), and Sn(4+) mono-doped α-Fe2O3 photoanodes (1.0 mA/cm(2)). From first-principles calculations, we found that Sn(4+) doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn(4+)-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be(2+) was co-doped with Sn(4+)-doped α-Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure.

  11. The Effects of Gd/Nd Co-Doping on the Microstructure and Dielectric Properties of BaTiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Tang; Bin; Zhang; ShuRen; Zhou; XiaoHua

    2009-11-01

    In order to obtain X7R (-55 to 125 °C, ΔC/C = ±15% or less) ceramics sintered at a middle temperature, the effects of Gd2O3 and Nd2O3 additives on the microstructure and dielectric properties of BaTiO3 (BT)-Nb2O5-ZnO-borosilicate system were investigated. When the amount of Gd2O3 was stable, the dielectric constant at room temperature (ɛ25 °C) monotonously decreased as the Nd2O3 content increased from 0.1 to 0.7 wt %. Minimal influence was observed on the high temperature coefficient of capacitance (TCC125 °C). In contrast, when the Nd2O3 content remained unchanged and Gd2O3 was increased, the dielectric constant ɛ25 °C at room temperature first declined and then increased and the TCC125 °C value decreased. Additionally, the TCC125 °C value of BT ceramics was positively correlated to the micro-stress. For Gd/Nd co-doped ceramics, TCC125 °C value was determined only by the Gd2O3 content. BT ceramics sintered at 1140 °C in air have the following properties: ɛ25 °C> 3000, tan δ≤1.0%, ρ≥1011 Ω·cm and ΔC/C (-55 to +125 °C) ≤ ±7.5%.

  12. Effect of bismuth oxide on the thermal stability and Judd-Ofelt parameters of Er3+/Yb3+ co-doped aluminophosphate glasses.

    PubMed

    Fang, Yongzheng; Hu, Lili; Liao, Meisong; Wen, Lei

    2007-11-01

    The Er3+/Yb3+ co-doped glasses with compositions of xBi2O3-(65-x)P2O5-4Yb2O3-11Al2O3-5BaO-15Na2O (where x=0, 2.5, 5, 7.5 and 10 mol%) were prepared using the normal melt quench technique. The optical absorption spectra of the glasses were recorded in the wavelength range 300-1700 nm. The effect of Bi2O3 content on the thermal stability and absorption spectra of glasses was investigated. In addition, the Judd-Ofelt parameters and oscillator strengths were calculated by employing Judd-Ofelt theory. It was observed that the positions of the fundamental absorption edge and cut-off wavelength shifted towards red as the content of Bi2O3 increased. However, there were no red shifts found both in the peak wavelength and in the center of mass wavelength of all absorption bands with Bi2O3 content increasing. The results of Judd-Ofelt theory analysis showed that Judd-Ofelt parameters Omega t (t=2, 4, 6) changed sharply when Bi2O3 concentration exceeded 5 mol%. The variation trends of experimental oscillator strength were similar with those of Judd-Ofelt parameters as function of Bi2O3 concentrations. Moreover, differential scanning calorimetry experiments showed that the increases of Bi2O3 content weakened the network structure and then lowered the thermal stability of the glasses. The spontaneous emission probability A rad, branching ratio beta and the radiative lifetime tau rad were also calculated and analyzed. The stimulated emission cross-section of Er3+ was calculated according to the McCumber theory. It was found that the stimulated emission cross-section of Er3+ was monotonically increases with Bi2O3 content increasing.

  13. Analysis of thermal and structural properties of germanate glasses co-doped with Yb3+/Tb3+ ions

    NASA Astrophysics Data System (ADS)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Dorosz, D.; Jelen, P.; Sitarz, M.

    2014-10-01

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb3+/Tb3+ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800 cm-1 corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O-) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621 nm corresponding to 5D4 → 7FJ (J = 6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  14. Analysis of thermal and structural properties of germanate glasses co-doped with Yb(3+)/Tb(3+) ions.

    PubMed

    Zmojda, J; Kochanowicz, M; Miluski, P; Dorosz, D; Jelen, P; Sitarz, M

    2014-10-15

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb(3+)/Tb(3+)ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800cm(-1) corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O(-)) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621nm corresponding to (5)D4→(7)FJ (J=6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  15. Effect of co-doped SnO{sub 2} nanoparticles on photoluminescence of cu-doped potassium lithium borate glass

    SciTech Connect

    Namma, Haydar Aboud; Wagiran, H.; Hussin, R.; Ariwahjoedi, B.

    2012-09-26

    The SnO{sub 2} co-doped lithium potassium borate glasses doped with 0.05, 0.10, 0.25 and 0.50 mol% of Cu were synthesized by the melt quenching technique. The SnO{sub 2} co-dope was added to the compounds in the amounts of 0.05, 0.10, and 0.20 mol%. The photoluminescent spectrum for different concentrations of copper was studied. It was observed that the intensity of blue emission (450, 490 nm) varies with concentration mol%. In addition, with different concentration of SnO{sub 2} to 0.10 mol% Cu, the influence of the luminescence has been observed to enhance intensity and shifted to blue and red (490, 535 nm) emissions.

  16. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  17. The effect of sulfur and zirconium Co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1987-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys, the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S sup 0.2 (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggests that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  18. The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1988-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  19. Effect of Li+ ions co-doping on luminescence, scintillation properties and defects characteristics of LuAG:Ce ceramics

    NASA Astrophysics Data System (ADS)

    Liu, Shuping; Feng, Xiqi; Mares, Jiri A.; Babin, Vladimir; Hu, Chen; Kou, Huamin; D'Ambrosio, Carmelo; Li, Jiang; Pan, Yubai; Nikl, Martin

    2017-02-01

    Monovalent Li+ codoped Lu3Al5O12:Ce (LuAG:Ce) optical ceramics were fabricated by solid state reaction method and further optimized by an air-annealing process. Optical absorption, radioluminescence spectra and scintillation properties such as light yield, scintillation decay times and afterglow were measured and compared with those of the Li+ free LuAG:Ce ceramic and the commercial LuAG:Ce single crystal samples. Positive effect of Li+ codopant consists mainly in the significant increase of scintillation light yield, acceleration of scintillation decay as well as the decrease of afterglow intensity. With 0.3% Li codoping, the obtained LuAG:Ce,Li ceramic displays a light yield of ∼29200 ph/MeV at 10 μs shaping time, higher than that of the LuAG:Ce single crystal and optical ceramic scintillators ever reported. The partial conversion of the stable Ce3+ to Ce4+ centers and the shallow and deep traps effect suppression by the Li+ codoping are discussed.

  20. Co-doping of Ag into Mn:ZnSe Quantum Dots: Giving Optical Filtering effect with Improved Monochromaticity

    NASA Astrophysics Data System (ADS)

    Hu, Zhiyang; Xu, Shuhong; Xu, Xiaojing; Wang, Zhaochong; Wang, Zhuyuan; Wang, Chunlei; Cui, Yiping

    2015-10-01

    In optics, when polychromatic light is filtered by an optical filter, the monochromaticity of the light can be improved. In this work, we reported that Ag dopant atoms could be used as an optical filter for nanosized Mn:ZnSe quantum dots (QDs). If no Ag doping, aqueous Mn:ZnSe QDs have low monochromaticity due to coexisting of strong ZnSe band gap emission, ZnSe trap emission, and Mn dopant emission. After doping of Ag into QDs, ZnSe band gap and ZnSe trap emissions can be filtered, leaving only Mn dopant emission with improved monochromaticity. The mechanism for the optical filtering effect of Ag was investigated. The results indicate that the doping of Ag will introduce a new faster deactivation process from ZnSe conduction band to Ag energy level, leading to less electrons deactived via ZnSe band gap emission and ZnSe trap emission. As a result, only Mn dopant emission is left.

  1. Co-doping of Ag into Mn:ZnSe Quantum Dots: Giving Optical Filtering effect with Improved Monochromaticity.

    PubMed

    Hu, Zhiyang; Xu, Shuhong; Xu, Xiaojing; Wang, Zhaochong; Wang, Zhuyuan; Wang, Chunlei; Cui, Yiping

    2015-10-08

    In optics, when polychromatic light is filtered by an optical filter, the monochromaticity of the light can be improved. In this work, we reported that Ag dopant atoms could be used as an optical filter for nanosized Mn:ZnSe quantum dots (QDs). If no Ag doping, aqueous Mn:ZnSe QDs have low monochromaticity due to coexisting of strong ZnSe band gap emission, ZnSe trap emission, and Mn dopant emission. After doping of Ag into QDs, ZnSe band gap and ZnSe trap emissions can be filtered, leaving only Mn dopant emission with improved monochromaticity. The mechanism for the optical filtering effect of Ag was investigated. The results indicate that the doping of Ag will introduce a new faster deactivation process from ZnSe conduction band to Ag energy level, leading to less electrons deactived via ZnSe band gap emission and ZnSe trap emission. As a result, only Mn dopant emission is left.

  2. The effects of group-I elements co-doping with Mn in ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Liqiang; Zhang, Yinzhu; Ye, Zhizhen; Lu, Jianguo; Lu, Bin; He, Bo

    2012-06-01

    Mn-Li codoped ZnO (Zn(Mn,Li)O), Mn-Na codoped ZnO (Zn(Mn,Na)O), and Mn-K codoped ZnO (Zn(Mn,K)O) thin films were deposited on quartz substrates by pulsed laser deposition. The doping effects of group-I elements (e.g., Li, Na, and K) on the structural, magnetic, and optical properties of the Mn doped ZnO (ZnMnO) films were discussed. X-ray diffraction and K-edge x-ray absorption near-edge structure measurements revealed that all the films showed a hexagonal wurtzite ZnO structure, and no other clusters, precipitates, or second phases were detected. Zn(Mn,Na)O and Zn(Mn,Li)O films showed a weak p-type conductivity, while the Zn(Mn,K)O film appeared a highly resistivity. The saturation magnetization of Zn(Mn,Na)O and Zn(Mn,Li)O films was 1.2 and 0.18 μB/Mn, respectively. The hole-related defects, induced by doping with a low content of Li or Na, contributed to the room temperature ferromagnetism in the ZnMnO system.

  3. Co-doping of Ag into Mn:ZnSe Quantum Dots: Giving Optical Filtering effect with Improved Monochromaticity

    PubMed Central

    Hu, Zhiyang; Xu, Shuhong; Xu, Xiaojing; Wang, Zhaochong; Wang, Zhuyuan; Wang, Chunlei; Cui, Yiping

    2015-01-01

    In optics, when polychromatic light is filtered by an optical filter, the monochromaticity of the light can be improved. In this work, we reported that Ag dopant atoms could be used as an optical filter for nanosized Mn:ZnSe quantum dots (QDs). If no Ag doping, aqueous Mn:ZnSe QDs have low monochromaticity due to coexisting of strong ZnSe band gap emission, ZnSe trap emission, and Mn dopant emission. After doping of Ag into QDs, ZnSe band gap and ZnSe trap emissions can be filtered, leaving only Mn dopant emission with improved monochromaticity. The mechanism for the optical filtering effect of Ag was investigated. The results indicate that the doping of Ag will introduce a new faster deactivation process from ZnSe conduction band to Ag energy level, leading to less electrons deactived via ZnSe band gap emission and ZnSe trap emission. As a result, only Mn dopant emission is left. PMID:26446850

  4. Investigating the effect of Cd-Mn co-doped nano-sized BiFeO3 on its physical properties

    NASA Astrophysics Data System (ADS)

    Ishaq, B.; Murtaza, G.; Sharif, S.; Azhar Khan, M.; Akhtar, Naeem; Will, I. G.; Saleem, Murtaza; Ramay, Shahid M.

    This work deals with the investigation of different effects on the structural, magnetic, electronic and dielectric properties of Cd and Mn doped Bi0.75Cd0.25Fe1-xMnxO3 multiferroic samples by taking fixed ratios of Cd and varying the Mn ratio with values of x = 0.0, 0.5, 0.10 and 0.15. Cd-Mn doped samples were synthesized chemically using a microemulsion method. All the samples were finally sintered at 700 °C for 2 h to obtain the single phase perovskites structure of BiFeO3 materials. The synthesized samples were characterized by different techniques, such as X-ray diffractometry (XRD), Scanning Electron Microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), LCR meter and magnetic properties using VSM. XRD results confirm BFO is a perovskite structure having crystallite size in the range of 24-54 nm. XRD results also reveal observed structural distortion due to doping of Cd at the A-site and Mn at the B-site of BFO. SEM results depict that, as the substitution of Cd-Mn increases in BFO, grain size decreases up to 30 nm. FTIR spectra showed prominent absorption bands at 555 cm-1 and 445 cm-1 corresponding to the stretching vibrations of the metal ions complexes at site A and site B, respectively. Variation of dielectric constant (ɛ‧) and loss tangent (tan δ) at room temperature in the range of 1 MHz to 3 GHz have been investigated. Results reveal that with Cd-Mn co doping a slight decrease in dielectric constant have been observed. Magnetic properties of Cd-Mn doped pure BFO samples have been studied at 300 K. Results reveal that undoped BiFeO3 exhibits weak ferromagnetic ordering due to the canting of its spin. Increase in magnetization and decrease in coercivity is a clear indication that a material can be used in high density recording media and memory devices.

  5. A clear effect of charge compensation through Na{sup +} co-doping on the luminescence spectra and decay kinetics of Nd{sup 3+}-doped CaAl{sub 4}O{sub 7}

    SciTech Connect

    Puchalska, M.; Watras, A.

    2016-06-15

    We present a detailed analysis of luminescence behavior of singly Nd{sup 3+} doped and Nd{sup 3+}, Na{sup +} co-doped calcium aluminates powders: Ca{sub 1−x}Nd{sub x}Al{sub 4}O{sub 7} and Ca{sub 1−2x}Nd{sub x}Na{sub x}Al{sub 4}O{sub 7} (x=0.001–0.1). Relatively intense Nd{sup 3+} luminescence in IR region corresponding to typical {sup 4}F{sub 3/2}→{sup 4}I{sub J} (J=9/2–13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f–f levels. The effect of dopant concentration and charge compensation by co-doping with Na{sup +} ions on morphology and optical properties were studied. The results show that both, the Nd{sup 3+} concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd{sup 3+}with raising activator content due to certain defects created in the crystal lattice. On the other hand Na{sup +} addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd{sup 3+} ions local symmetries. Consequently, charge compensated by Na{sup +} co-doping materials showed significantly enhanced Nd{sup 3+} luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd{sup 3+} ions. Analysis with Inokuti–Hirayama model indicated dipole–dipole mechanism of ion-ion interaction. Na{sup +} addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl{sub 4}O{sub 7} lattice.

  6. Effective Construction of High-quality Iron Oxy-hydroxides and Co-doped Iron Oxy-hydroxides Nanostructures: Towards the Promising Oxygen Evolution Reaction Application

    NASA Astrophysics Data System (ADS)

    Zhang, Xinyu; An, Li; Yin, Jie; Xi, Pinxian; Zheng, Zhiping; Du, Yaping

    2017-03-01

    Rational design of high efficient and low cost electrocatalysts for oxygen evolution reaction (OER) plays an important role in water splitting. Herein, a general gelatin-assisted wet chemistry method is employed to fabricate well-defined iron oxy-hydroxides and transitional metal doped iron oxy-hydroxides nanomaterials, which show good catalytic performances for OER. Specifically, the Co-doped iron oxy-hydroxides (Co0.54Fe0.46OOH) show the excellent electrocatalytic performance for OER with an onset potential of 1.52 V, tafel slope of 47 mV/dec and outstanding stability. The ultrahigh oxygen evolution activity and strong durability, with superior performance in comparison to the pure iron oxy-hydroxide (FeOOH) catalysts, originate from the branch structure of Co0.54Fe0.46OOH on its surface so as to provide many active edge sites, enhanced mass/charge transport capability, easy release oxygen gas bubbles, and strong structural stability, which are advantageous for OER. Meanwhile, Co-doping in FeOOH nanostructures constitutes a desirable four-electron pathway for reversible oxygen evolution and reduction, which is potentially useful for rechargeable metal‑air batteries, regenerative fuel cells, and other important clean energy devices. This work may provide a new insight into constructing the promising water oxidation catalysts for practical clean energy application.

  7. Effects of post-annealing and cobalt co-doping on superconducting properties of (Ca,Pr)Fe2As2 single crystals

    NASA Astrophysics Data System (ADS)

    Okada, T.; Ogino, H.; Yakita, H.; Yamamoto, A.; Kishio, K.; Shimoyama, J.

    2014-10-01

    In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe2As2 system, Pr doped and Pr,Co co-doped CaFe2As2 single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with Tc1 = 25-42 K, and Tc2 < 16 K, suggesting that (Ca,RE)Fe2As2 system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ∼400 °C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ∼400 °C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400 °C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below Tc2 and high Jc values of 104-105 A cm-2 at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe2As2 phase occurred below Tc2. On the contrary, the superconducting volume fraction above Tc2 was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.

  8. Effect of substrate surface treatment on electrochemically assisted photocatalytic activity of N-S co-doped TiO2 films

    NASA Astrophysics Data System (ADS)

    Parada-Gamboa, N. J.; Pedraza-Avella, J. A.; Meléndez, A. M.

    2017-01-01

    To investigate whether different metal surface treatments, performed on meshes of stainless steel 304 and titanium, affect the photocatalytic activity (PCA) of supported modified anodic TiO2 films, metallic substrates were coated with titanium isopropoxide sol-gel precursor modified with thiourea. Substrates were pretreated by some of the following techniques: a) sandblasting, b) pickling, c) hydroxylation and d) passivation. The as-prepared electrode materials were characterized by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), and voltammetry in the dark and under light UVA irradiation. PCA of modified N-S-TiO2 electrodes was evaluated by electrochemically assisted photocatalytic degradation of methyl orange. The results of XPS revealed that N and S were incorporated into the lattice of TiO2. FESEM showed that surface roughness and thickness of films varies depending on surface treatment. Voltammetric and XPS characterization of N-S co-doped TiO2 films supported on stainless steel revealed that their surface contains alpha-Fe2O3/FeOOH. Accordingly, iron contamination of the films coming from stainless steel was detrimental to the degradation of methyl orange. Prior to sol-gel coating process, sandblasting followed by nitric acid passivation for stainless steel or hydrofluoric acid pickling process in the case of titanium improved the PCA of N-S co-doped TiO2 films.

  9. Effective Construction of High-quality Iron Oxy-hydroxides and Co-doped Iron Oxy-hydroxides Nanostructures: Towards the Promising Oxygen Evolution Reaction Application.

    PubMed

    Zhang, Xinyu; An, Li; Yin, Jie; Xi, Pinxian; Zheng, Zhiping; Du, Yaping

    2017-03-08

    Rational design of high efficient and low cost electrocatalysts for oxygen evolution reaction (OER) plays an important role in water splitting. Herein, a general gelatin-assisted wet chemistry method is employed to fabricate well-defined iron oxy-hydroxides and transitional metal doped iron oxy-hydroxides nanomaterials, which show good catalytic performances for OER. Specifically, the Co-doped iron oxy-hydroxides (Co0.54Fe0.46OOH) show the excellent electrocatalytic performance for OER with an onset potential of 1.52 V, tafel slope of 47 mV/dec and outstanding stability. The ultrahigh oxygen evolution activity and strong durability, with superior performance in comparison to the pure iron oxy-hydroxide (FeOOH) catalysts, originate from the branch structure of Co0.54Fe0.46OOH on its surface so as to provide many active edge sites, enhanced mass/charge transport capability, easy release oxygen gas bubbles, and strong structural stability, which are advantageous for OER. Meanwhile, Co-doping in FeOOH nanostructures constitutes a desirable four-electron pathway for reversible oxygen evolution and reduction, which is potentially useful for rechargeable metal-air batteries, regenerative fuel cells, and other important clean energy devices. This work may provide a new insight into constructing the promising water oxidation catalysts for practical clean energy application.

  10. Effective Construction of High-quality Iron Oxy-hydroxides and Co-doped Iron Oxy-hydroxides Nanostructures: Towards the Promising Oxygen Evolution Reaction Application

    PubMed Central

    Zhang, Xinyu; An, Li; Yin, Jie; Xi, Pinxian; Zheng, Zhiping; Du, Yaping

    2017-01-01

    Rational design of high efficient and low cost electrocatalysts for oxygen evolution reaction (OER) plays an important role in water splitting. Herein, a general gelatin-assisted wet chemistry method is employed to fabricate well-defined iron oxy-hydroxides and transitional metal doped iron oxy-hydroxides nanomaterials, which show good catalytic performances for OER. Specifically, the Co-doped iron oxy-hydroxides (Co0.54Fe0.46OOH) show the excellent electrocatalytic performance for OER with an onset potential of 1.52 V, tafel slope of 47 mV/dec and outstanding stability. The ultrahigh oxygen evolution activity and strong durability, with superior performance in comparison to the pure iron oxy-hydroxide (FeOOH) catalysts, originate from the branch structure of Co0.54Fe0.46OOH on its surface so as to provide many active edge sites, enhanced mass/charge transport capability, easy release oxygen gas bubbles, and strong structural stability, which are advantageous for OER. Meanwhile, Co-doping in FeOOH nanostructures constitutes a desirable four-electron pathway for reversible oxygen evolution and reduction, which is potentially useful for rechargeable metal−air batteries, regenerative fuel cells, and other important clean energy devices. This work may provide a new insight into constructing the promising water oxidation catalysts for practical clean energy application. PMID:28272443

  11. [Effect of bivalent alkaline earth fluorides introduction on thermal stability and spectroscopic properties of Er3+/Tm3+ /Yb3+ co-doped oxyfluorogermanate glasses].

    PubMed

    Hu, Yue-bo; Zhang, Xin-na; Zhou, Da-li; Jiao, Qing; Wang, Rong-fei; Huang, Jin-feng; Long, Xiao-bo; Qiu, Jian-bei

    2012-01-01

    Transparent Er3+/Tm3+ /Yb3+ co-doped oxyfluorogermanate glasses alone containing MgF2, CaF2, SrF2 or BaF2 and nano-glass-ceramics only containing BaF2 were prepared. The thermal stabilities and the up-conversion emission properties of the samples were investigated. Analyses of absorbance spectra reveal that the UV cutoff band moves slightly to shortwave band with the doping bivalent cation mass increasing. The results show that the emission color can be adjusted by changing the alkaline earth cation species in the glass matrixes, especially as Mg2+ is concerned, and the emission intensity can increase notably by heating the glass containing alkaline-earth fluoride into glass ceramic containing alkaline-earth fluoride nanocrystals or increasing the content of bivalent alkaline earth fluorides.

  12. Mg co-doping effects on Ce doped Y3(Ga,Al)5O12 scintillator

    NASA Astrophysics Data System (ADS)

    Kamada, Kei; Yamaji, Akihiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2017-02-01

    Nonstoichiometric Lu3Al5+xO12 (x= 0.05, 0.15, 0.35, 0, -0.05, -0.15, -0.35) crystals were grown by the μ-PD method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Expected anti-site defect related host emission have been observed in 250-420nm. Emission intensity was increased by increasing the nonstochiometry. The x=-0.35 sample showed the highest light yield of around 12000 photons/MeV and slowest scintillation decay time of 1.96μs.

  13. Characterization of afterglow-related spectroscopic effects in vacuum sintered Tb3+, Sr2+ co-doped Lu2O3 ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Shi; Yang, Yan; Zhou, Guohong; Wu, Yiquan; Liu, Peng; Zhang, Fang; Wang, Shiwei; Trojan-Piegza, Joanna; Zych, Eugeniusz

    2012-12-01

    Persistent luminescence phosphors, Tb3+, Sr2+ co-doped Lu2O3 ceramics were fabricated under vacuum at 1870 °C. A strong green color afterglow could be observed after excitation with 254 nm UV radiation. The afterglow was found to be roughly doubled in intensity upon stimulation with violet or blue-green photons (˜400-600 nm) as well as upon IR radiation (˜800-980 nm). Hence, the enhancement of the green afterglow could also be attained by means of natural sunlight. Short wavelength UV radiation was found to induce an extrinsic absorption band below about 600 nm and extending into the deep UV. This was mirrored by a simultaneous decrease of the absorption by Tb3+ around 230-320 nm. The extrinsic absorption seemed to contain at least two overlapping components which supposedly resulted from a band related to Tb4+/Tb3+-h and a feature resulting from F/F+ centers created upon irradiation with short UV. This absorption was shown to be reversible, as it disappeared after a short heat treatment at about 300 °C as well as with continuous irradiation of ˜400 nm radiation.

  14. Effect of different surfactants on structural and optical properties of Ce3+ and Tb3+ co-doped BiPO4 nanostructures

    NASA Astrophysics Data System (ADS)

    Lakshminarayana, G.; Dao, T. D.; Chen, K.; Sharma, Manoj; Takeda, T.; Brik, M. G.; Kityk, I. V.; Singh, Sarabjot; Nagao, T.

    2015-01-01

    In this paper we report on the Ce3+ and Tb3+ ions co-doped bismuth phosphate (BiPO4) nanostructures that were synthesized by a simple precipitation method using different surfactants such as glycerol/H2O, glycerol/ethylene glycol, oleic acid, and ethylene glycol. The structural (X-ray diffraction, scanning electron microscopy, tunneling electron microscopy), functional groups analysis (Fourier transform infrared and Raman spectroscopy), thermal (thermogravimetry and differential thermal analysis), and optical (photoluminescence, photoluminescence-excitation) properties were investigated. The structural and morphological analysis confirms the pure hexagonal crystal structure of the synthesized nanostructures. From the measured Fourier transform infrared (FTIR) and Raman spectra various functional groups such as υ3 stretching vibration of the PO4 group, and δ(O-P-O) and υ4 (PO4) vibrations including the υ2 and υ1 bending modes of the PO4 units are identified. Based on the thermal analysis, for all the studied samples an exothermic peak between 680 °C and 700 °C was observed due to phase transition from hexagonal to high temperature monoclinic. The Ce3+and Tb3+ codoped samples show spectrally broad 5d → 4f luminescence in the blue (centered at 459 nm) wavelength region under the direct optical excitation of Ce3+ at 417 nm. Similarly, Tb3+ has revealed four main emission bands (5D4 → 7F6, 5, 4 and 3) at 490 nm, 545 nm, 585 nm and 621 nm with 378 nm (7F6 → 5G6) as the excitation wavelength, including three more weak emission bands at 647 nm, 669 nm, and 681 nm which could be assigned to 5D4 → 7F2, 1, 0 emission transitions. Among them, 545 nm (5D4 → 7F5) has shown bright green emission. The Ce3+ and Tb3+ codoped sample synthesized with pure oleic acid have shown relatively high green emission intensity for Tb3+, and relatively weak blue emission intensity for Ce3+ under their respective optical excitation wavelengths.

  15. Characterization of co-doped (In, N): ZnO by indigenous thermopower measurement system

    NASA Astrophysics Data System (ADS)

    Kedia, Sanjay Kumar; Singh, Anil; Chaudhary, Sujeet

    2016-05-01

    The thermopower measurement of (In, N) co-doped ZnO thin films have been carried out using indigenous high and low temperature thermopower measurement system. The compact thermopower measurement system has been designed, developed, tested in house. The sensitivity and accuracy of indigenous thermopower system have been investigated by measuring thermopower of standard samples like Cu, Ni, Sb etc. It has been also investigated by the comparison of carrier concentration using Hall Effect and Thermopower measurement of these (In, N) co-doped ZnO thin films. The constant temperature gradient between hot and cold junction has been maintained by using the temperature controller. The room temperature and low temperature Seebeck coefficient measurements were performed on these co-doped ZnO samples. A series of experiments have been performed to detect the p-type conductivity in co-doped ZnO thin films, particularly at low temperature. The negative Seebeck coefficient observed down to 40 K established the n-type behavior in these co-doped samples.

  16. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  17. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis.

    PubMed

    Rahul, T K; Sandhyarani, N

    2015-11-21

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  18. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis

    NASA Astrophysics Data System (ADS)

    Rahul, T. K.; Sandhyarani, N.

    2015-10-01

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  19. Enhanced photocatalytic activity of Co doped ZnO nanodisks and nanorods prepared by a facile wet chemical method.

    PubMed

    Kuriakose, Sini; Satpati, Biswarup; Mohapatra, Satyabrata

    2014-07-07

    Cobalt doped ZnO nanodisks and nanorods were synthesized by a facile wet chemical method and well characterized by X-ray diffraction, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) with energy dispersive X-ray spectroscopy, photoluminescence spectroscopy, Raman spectroscopy and UV-visible absorption spectroscopy. The photocatalytic activities were evaluated for sunlight driven degradation of an aqueous methylene blue (MB) solution. The results showed that Co doped ZnO nanodisks and nanorods exhibit highly enhanced photocatalytic activity, as compared to pure ZnO nanodisks and nanorods. The enhanced photocatalytic activities of Co doped ZnO nanostructures were attributed to the combined effects of enhanced surface area of ZnO nanodisks and improved charge separation efficiency due to optimal Co doping which inhibit recombination of photogenerated charge carriers. The possible mechanism for the enhanced photocatalytic activity of Co doped ZnO nanostructures is tentatively proposed.

  20. The effects of doping and shell thickness on the optical and magnetic properties of Mn/Cu/Fe-doped and Co-doped ZnS nanowires/ZnO quantum dots/SiO2 heterostructures

    NASA Astrophysics Data System (ADS)

    Cao, Jian; Yang, Jinghai; Yang, Lili; Wei, Maobin; Feng, Bo; Han, Donglai; Fan, Lin; Wang, Bingji; Fu, Hao

    2012-07-01

    In this paper, we demonstrated the encapsulation of Mn/Cu/Fe-doped and co-doped ZnS nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission and ferromagnetism property into one common nanostructure at room temperature. Within the ZnS:Mn2+Cu2+Fe2+/ZnO@SiO2 nanocomposites, ZnS:Mn2+Cu2+Fe2+ NWs and ZnO QDs provided color-tunable visible emission and UV emission, respectively. The color-tunable visible emission in the ZnS:Mn2+Cu2+Fe2+ NWs can be obtained by adjusting the concentrations of Mn2+, Cu2+, and Fe2+ ions. The ferromagnetism of the ZnS:Mn2+Cu2+Fe2+ NWs was observed around room temperature, the mechanism of which was explained by the super-exchange mechanism. The results of the effect of the ZnO QDs shell thickness on the optical properties of the ZnS:Mn2+/ZnO@SiO2 nanocomposites showed that the luminescence intensity of the yellow-orange emission and UV emission reached the highest value when the ratio of ZnS:Mn2+/ZnO equaled 1:5.

  1. Co-doped mesoporous titania photocatalysts prepared from a peroxo-titanium complex solution

    SciTech Connect

    El Saliby, Ibrahim; Erdei, Laszlo; McDonagh, Andrew; Kim, Jong-Beom; Kim, Jong-Ho; Shon, Ho Kyong

    2014-01-01

    Graphical abstract: - Highlights: • Peroxotitanium complex for the synthesis of doped photocatalysts. • Fabrication of N doped and N/Ag co-doped photocatalysts. • Characterization of photocatalysts by SEM, XRD, BET, DRS and XPS. • Bench scale photocatalysis under simulated solar light using crystal violet pollutant. - Abstract: In this study, nitrogen doped and nitrogen/silver co-doped TiO{sub 2} photocatalsysts were fabricated using a sol–gel method at room temperature. The obtained gels were neutralized, washed with pure water, and calcined at 400 °C for 4 h. The photocatalysts were characterized by scanning and transmission electron microscopy, X-ray diffraction, diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, and BET specific surface area. The results showed that spherical particles with anatase structure were produced after annealing at 400 °C. N 1s (400 eV) and Ag 3d (367.3 eV) states indicated that nitrogen doping and silver co-doping were in the form of NO bonds and AgO, respectively. The photocatalytic activity of photocatalysts was investigated using a batch reactor system exposed to artificial solar irradiation. Both nitrogen and silver/nitrogen co-doped materials were effective in the photocatalytic degradation of hexamethyl pararosaniline chloride.

  2. Influence of Co doping on combined photocatalytic and antibacterial activity of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Anandan, M.; Dinesh, S.; Krishnakumar, N.; Balamurugan, K.

    2016-11-01

    The present work aims to investigate the structural, optical, photocatalyst and antibacterial properties of bare and cobalt doped ZnO nanoparticles (NPs) with different concentrations Zn1-x Co x O (x = 0, 0.03, 0.06 and 0.09) synthesized by co-precipitation method. The XRD patterns confirmed that all samples of cobalt doped ZnO nanostructures revealed the formation of single phase having hexagonal wurtzite structure with crystallite size in the range of 31-41 nm. Further, the decreasing trend in lattice parameters and grain sizes were also seen with increasing doping concentrations which confirms the incorporation of Co ions into the ZnO lattice. This result was further supported by the FT-IR data. HR-TEM images demonstrated the distinct hexagonal like morphology with small agglomeration. The UV-visible absorption spectra exhibits red shift with increase in Co doping concentration in ZnO while corresponding bandgap energy of cobalt doped ZnO NPs decreased with increased Co doping concentration. PL spectra showed a weak UV and visible emission band which may be ascribed to the reduction in oxygen vacancy and defects by cobalt doping. XPS and EDX spectral results confirm the composition and the purity of Co doped ZnO NPs. Furthermore, the Co doped ZnO NPs were found to exhibit lesser photocatalytic activity for the degradation of methyl green dye under UV light illumination in comparison with the bare ZnO NPs. Moreover, anti-bacterial studies reveals that the Co doped ZnO NPs possess more antibacterial effect against gram positive Basillus subtills and gram negative Klebsiella pneumoniae bacterial strains than the bare ZnO NPs.

  3. A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

    SciTech Connect

    Dong, Guohua; Tan, Guoqiang Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-12-15

    Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

  4. Proton and Gamma Radiation Effects in Undoped, Single-doped and co-doped YLiF4 and LuLiF4

    NASA Technical Reports Server (NTRS)

    Lee, Hyung; Bai, Yingxin; Yu, Kirong; Singh, U.

    2009-01-01

    Proton and gamma radiation effects in various YLiF4 and LuLiF4 crystals have been investigated. The radiation induced color centers compared with six different kinds of crystal samples in ranges up to 200 krads and 200 MeV. The radiation induced absorption coefficients are strongly dependent on polarization and concentration of rare-earth ions.

  5. Tuning the near-gap electronic structure of Cu2O by anion-cation co-doping for enhanced solar energy conversion

    NASA Astrophysics Data System (ADS)

    Si, Yuan; Yang, Hao-Ming; Wu, Hong-Yu; Huang, Wei-Qing; Yang, Ke; Peng, Ping; Huang, Gui-Fang

    2017-01-01

    Doping is an effective strategy to tune the electronic properties of semiconductors, but some side effects caused by mono-doping degrade the specific performance of matrixes. As a model system to minimize photoproduced electron-hole pairs recombination by anion-cation co-doping, we investigate the electronic structures and optical properties of (Fe+N) co-doped Cu2O using the first-principles calculations. Compared to the case of mono-doping, the FeCuNO (a Fe (N) atom substituting a Cu (O) atom) co-doping reduces the energy cost of doping as a consequence of the charge compensation between the iron and nitrogen impurities, which eliminates the isolated levels (induced by mono-dopant) in the band gap. Interestingly, it is found that the contributions of different host atoms (Cu and O) away from anion (N) and cation (Fe) dopants to the variation of near band gap electronic structure of the co-doped Cu2O are different. Moreover, co-doping reduces the band gap and increases the visible-light absorption of Cu2O. Both band gap reduction and low recombination rate are critical elements for efficient light-to-current conversion in co-doped semiconductor photocatalysts. These findings raise the prospect of using co-doped Cu2O with specifically engineered electronic properties in a variety of solar applications.

  6. Effect of co-doping of sodium on the thermoluminescence dosimetry properties of copper-doped zinc lithium borate glass system.

    PubMed

    Saidu, A; Wagiran, H; Saeed, M A; Alajerami, Y S M; Kadir, A B A

    2016-12-01

    The effect of sodium as a co-dopant on the thermoluminescence (TL) properties of copper-doped zinc lithium borate (ZLB: Cu) subjected to Co-60 gamma radiation is reported in this study. TL intensity is enhanced with the introduction of sodium in ZLB: Cu. The obtained glow curve is simple with a single peak. The annealing procedure and the best heating rate for the proposed thermoluminescent dosimeter (TLD) are established, and the phosphor is reusable. The TL response within the dose range of 0.5-1000Gy is investigated. The results show that the thermal fading behaviour is improved significantly.

  7. Origin of enhanced visible-light photocatalytic activity of transition-metal (Fe, Cr and Co)-doped CeO2: effect of 3 d orbital splitting

    NASA Astrophysics Data System (ADS)

    Yang, Ke; Li, Dong-Feng; Huang, Wei-Qing; Xu, Liang; Huang, Gui-Fang; Wen, Shuangchun

    2017-01-01

    Enhanced visible-light photocatalytic activity of transition-metal-doped ceria (CeO2) nanomaterials has experimentally been demonstrated, whereas there are very few reports mentioning the mechanism of this behavior. Here, we use first-principles calculations to explore the origin of enhanced photocatalytic performance of CeO2 doped with transition metal impurities (Fe, Cr and Co). When a transition metal atom substitutes a Ce atom into CeO2, t 2g and e g levels of 3 d orbits appear in the middle of band gap owing to the effect of cubic ligand field, and the former is higher than latter. Interestingly, t 2g subset of FeCe (CoCe and CrCe)-Vo-CeO2 splits into two parts: one merges into the conduction band, the other as well as e g will remain in the gap, because O vacancy defect adjacent to transition metal atom will break the symmetry of cubic ligand field. These e g and t 2g levels in the band gap are beneficial for absorbing visible-light and enhancing quantum efficiency because of forbidden transition, which is one key factor for enhanced visible-light photocatalytic activity. The band gap narrowing also leads to a redshift of optical absorbance and high photoactivity. These findings can rationalize the available experimental results and provide some new insights for designing CeO2-based photocatalysts with high photocatalytic performance.

  8. Influence of praseodymium and nitrogen co-doping on the photocatalytic activity of TiO{sub 2}

    SciTech Connect

    Wu, Jing; Liu, Qingju; Gao, Pan; Zhu, Zhongqi

    2011-11-15

    Highlights: {yields} The praseodymium and nitrogen co-doped TiO{sub 2} (Pr-N-TiO{sub 2}) powders were prepared and characterized. {yields} The effects on the photocatalytic activity were studied. {yields} The results exhibit that the spectrum absorption region of the co-doped sample is red-shifted to visible light and the recombination of the photo-generated pairs is inhibited. {yields} The photocatalytic activity is greatly improved. -- Abstract: TiO{sub 2} nanoparticles co-doped with different doping concentration of Pr and N were prepared by sol-gel method combined with microwave chemical method. The samples were characterized by XRD, FT-IR, UV-vis, TEM, XPS, PL, and the photocatalytic activity were investigated by photocatalytic degradation of methylene blue (MB). The results indicate that Pr and N ions incorporate into the lattice of TiO{sub 2}, co-doping restrains the increase of grain size, broadens the absorption region to visible light, and inhibits the recombination of the photo-generated electrons and holes. Moreover, the photocatalytic activity of Pr-N-TiO{sub 2} is remarkable improved due to the synergistic effect of the co-doped ions. The degradation rate of MB in 6 h is 92.81%, which is much higher than that of Degussa P25 (45.01%).

  9. Degradation of nitrobenzene using titania photocatalyst co-doped with nitrogen and cerium under visible light illumination.

    PubMed

    Shen, Xiang-Zhong; Liu, Zhi-Cheng; Xie, Shan-Mei; Guo, Jun

    2009-03-15

    A type of nitrogen and cerium co-doped titania photocatalyst, which could degrade nitrobenzene under visible light irradiation, was prepared by the sol-gel route. Titanium isopropoxide, ammonium nitrate, and cerium nitrate were used as the sources of titanium, nitrogen, and cerium, respectively. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis diffusive reflectance spectroscopy (DRS), scanning electron microscopy (SEM), and N(2) adsorption-desorption isotherm were employed to characterize the as-prepared photocatalyst. The degradation of nitrobenzene under visible light illumination was taken as probe reaction to evaluate the photoactivity of the co-doped photocatalyst. The commercial TiO(2) photocatalyst (Degussa P25), which was thought as a high active photocatalyst, was chosen as standard photocatalyst to contrast the photoactivity of the nitrogen and cerium co-doped titania photocatalyst. The results showed that the photocatalytic performance of the nitrogen and cerium co-doped titania was related with the calcination temperature and the component. The nitrogen atoms were incorporated into the crystal of titania and could narrow the band gap energy. The doping cerium atoms existed in the forms of Ce(2)O(3) and dispersed on the surface of TiO(2). The improvement of the photocatalytic activity was ascribed to the synergistic effects of the nitrogen and cerium co-doping.

  10. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  11. Enhanced dopant solubility and visible-light absorption in Cr-N co-doped TiO2 nanoclusters

    SciTech Connect

    Chiodi, Dr Mirco; Cheney, Christine; Vilmercati, Paolo; Cavaliere, Emanuele; Mannella, Norman; Gavioli, Luca; Weitering, Harm H

    2012-01-01

    A major obstacle toward employing TiO2 as an efficient photoactive material is related to its large optical band gap, strongly limiting visible light absorption. Substitutional doping with both donors and acceptors (co-doping) potentially leads to a significant band gap reduction, but the effectiveness of the co-doping approach remains limited by the low solubility of dopants inside TiO2. Here we show that nanostructured Cr and N co-doped TiO2 thin films can be obtained by Supersonic Cluster Beam Deposition (SCBD) with a high concentration of dopants and a strongly reduced band gap. Complementary spectroscopic investigations show that doping effectively occurs into substitutional lattice sites, inducing dopant levels in the gap that are remarkably delocalized. The high surface-to-volume ratio, typical of SCBD nanostructured films, likely facilitates the dopant incorporation. The present results indicate that SCBD films are highly promising photoactive nanophase materials.

  12. W/Mo co-doped BiVO4 for photocatalytic treatment of polymer-containing wastewater in oilfield

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Li, Wei; Wan, Wenchao; Zhang, Ruiyang; Lin, Yuanhua

    2015-06-01

    Polymer flooding is an effective way to enhance oil recovery (EOR). However, the treatment of the oily wastewater becomes an urgent issue. Photocatalysis is a promising approach for this purpose. In this report, W/Mo co-doped BiVO4 particles are synthesized by hydrothermal method. W/Mo co-doping could promote an effective separation of photogenerated carriers reflecting from the 6 times higher photocurrent density compared to pure BiVO4. The photodegradation of partially hydrolyzed polyacrylamide (HPAM) over 0.5 at.% W and 1.5 at.% Mo co-doped BiVO4 is 43% under UV-vis light irradiation for 3 h, which is much higher than that of pure BiVO4 (18%).

  13. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Peera, S. Gouse; Arunchander, A.; Sahu, A. K.

    2016-07-01

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ~110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity and

  14. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    NASA Astrophysics Data System (ADS)

    Sasani, Alireza; Baktash, Ardeshir; Mirabbaszadeh, Kavoos; Khoshnevisan, Bahram

    2016-10-01

    In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO2 anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO2 surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase JSC of the surface while slightly decreasing VOC compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  15. Enhanced photocatalytic properties of quantum-sized ZnO induced by La3+-Nd3+ co-doping

    NASA Astrophysics Data System (ADS)

    Lu, S. X.; Zhu, T.; Xu, W. G.

    2009-09-01

    Nanoparticles of ZnO doped with La3+, Nd3+, co-doped with La3+ and Nd3+ were prepared using the sol-gel method. The samples were characterized by means of X-ray diffraction (XRD), UV-Vis spectroscopy (UV). The photocatalytic reactivities were evaluated by photodegradation of unsymmetrical dimethylhydrazine solution. Nanocrystalline ZnO co-doped with La3+ and Nd3+ at optimal concentration (2 at.% La3+ and 1.5 at.% Nd3+) shows a better synergistic effect, which significantly increases the photodegradation activity of nano-ZnO. The factors influencing photoreactivity of co-doped nanocrystalline ZnO have been discussed.

  16. Phosphorus and Halogen Co-Doped Graphene Materials and their Electrochemistry.

    PubMed

    Wang, Lu; Sofer, Zdenek; Zboril, Radek; Cepe, Klara; Pumera, Martin

    2016-10-17

    Doping of graphene materials with heteroatoms is important as it can change their electronic and electrochemical properties. Here, graphene is co-doped with n-type dopants such as phosphorus and halogen (Cl, Br, I). Phosphorus and halogen are introduced through the treatment of graphene oxide with PX3 gas (PCl3 , PBr3 , and PI3 ). Graphene oxides are prepared through chlorate and permanganate routes. Detailed chemical and structural characterization demonstrates that the graphene sheets are covered homogeneously by phosphorus and halogen atoms. It is found that the amount of phosphorus and halogen introduced depends on the graphene oxide preparation method. The electrocatalytic effect of the resulting co-doped materials is demonstrated for industrially relevant electrochemical reactions such as the hydrogen evolution and oxygen reduction reactions.

  17. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    NASA Astrophysics Data System (ADS)

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C. S.; de Moura, Ana P.; Freire, Poliana G.; da Silva, Luis F.; Longo, Elson; Munoz, Rodrigo A. A.; Lima, Renata C.

    2015-10-01

    We report for the first time a rapid preparation of Zn1-2xCoxNixO nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green-orange-red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO.

  18. Polymer-assisted deposition of co-doped zinc oxide thin films for the detection of aromatic organic compounds.

    PubMed

    Li, Wei; Kim, Dojin

    2011-12-01

    Co-doped Zinc oxide thin films are deposited onto SiO2/Si substrate by polymer-assisted deposition method. The surface morphology, structures and chemical states of the thin films are examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The gas-sensing properties of the thin films upon exposure to aromatic organic compound vapors are also investigated. Co-doping is shown to be very effective in enhancing the response of ZnO thin film to aromatic organic compound.

  19. Absence of dipolar ordering in Co doped CuO

    NASA Astrophysics Data System (ADS)

    Chaudhary, N. Vijay Prakash; Murthy, J. Krishna; Venimadhav, A.

    2016-12-01

    Polycrystalline CuO samples with Co doping were prepared by solid state method with flowing oxygen condition and examined their structural and multiferroic properties. Structural studies have confirmed single phase monoclinic crystal structure of all samples, however, in Co doped samples a decrease in volume with an increase in monoclinic distortion is found. For pristine sample, temperature dependent magnetization has confirmed two antiferromagnetic (AFM) transitions at 213 K and 230 K and frequency independent dielectric peaks at these AFM transitions suggesting the ferroelectric nature. Magnetization of the Co doped samples has showed a marginal increase in ordering temperature of the high-temperature AFM transition and decrease in low temperature AFM ordering temperature. Further, doped samples have shown giant dielectric constant with no signature of ferroelectricity. The X-ray photoelectric spectroscopy study has revealed multiple valance states for both Co and Cu in the doped samples that simultaneously explain the giant dielectric constant and suppression of ferroelectric order.

  20. Synthesis of N, F and S co-doped graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Sumana; Yadav, Ram Manohar; Narayanan, T. N.; Shelke, Manjusha V.; Vajtai, Robert; Ajayan, P. M.; Pillai, Vijayamohanan K.

    2015-07-01

    Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants.Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants. Electronic supplementary information (ESI) available: PLQY calculation, MWCNT synthetic details, TGA analysis and tabular format of GQD synthesis processes. See DOI: 10.1039/c5nr02427g

  1. Growth study and photocatalytic properties of Co-doped tungsten oxide mesocrystals

    SciTech Connect

    Sun, Shibin; Chang, Xueting; Li, Zhenjiang

    2012-11-15

    Cobalt-doped tungsten oxide mesocrystals with different morphologies have been successfully generated using a solvothermal method with tungsten hexachloride and cobalt chloride salts as precursors. The resulting mesocrystals were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer-Emmet-Teller analysis of nitrogen sorptometer, and UV-vis diffuse reflectance spectroscopy. The photocatalytic properties of the cobalt-doped tungsten oxide mesocrystals were evaluated on the basis of their ability to degrade methyl orange in an aqueous solution under simulated sunlight irradiation. Results showed that the cobalt doping had obvious effect on the morphologies of the final products, and lenticular and blocky cobalt-doped tungsten oxide mesocrystals could be obtained with 1.0 wt.% and 2.0 wt.% cobalt doping, respectively. The cobalt-doped tungsten oxides exhibited superior photocatalytic activities to that of the undoped tungsten oxide. - Graphical abstract: Schematic illustrations of the growth of the bundled nanowires, lenticular mesocrystals, and blocky mesocrystals. Highlights: Black-Right-Pointing-Pointer Co-doped W{sub 18}O{sub 49} mesocrystals were synthesized using a solvothermal method. Black-Right-Pointing-Pointer The Co doping has obvious effect on the morphology of the final mesocrystals. Black-Right-Pointing-Pointer The Co-doped W{sub 18}O{sub 49} exhibited superior photocatalytic activity to the undoped W{sub 18}O{sub 49}.

  2. Color tunable ZnO nanorods by Eu and Tb co-doping for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Pal, Partha P.; Manam, J.

    2014-07-01

    Eu/Tb co-doped ZnO nanorods were prepared by co-precipitation method and the effect of Eu-Tb co-doping was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis-NIR diffuse reflectance (DR) and photoluminescence (PL) spectroscopy. The XRD pattern shows typical peak pattern for pure hexagonal wurtzite structure to match with the JCPDS data. The samples are found to be consisting of nanorods of diameter 20-30 nm as revealed by the TEM image. The FTIR pattern confirms the formation of the compounds. The DR study was carried to show the variation of absorption edge and the variation in band gap values, which showed the crystal size effect in the co-doped sample of different rare-earth ratios. The room temperature PL study shows bright emission spectra for the samples with different rare-earth ratios. It shows a very good energy transfer from Tb to Eu ions. The energy transfer mechanism and color tunability were discussed thoroughly.

  3. Effect of Co doping on sinterability and protonic conductivity of BaZr0.1Ce0.7Y0.1Yb0.1O3-δ for protonic ceramic fuel cells

    NASA Astrophysics Data System (ADS)

    Wan, Yanhong; He, Beibei; Wang, Ranran; Ling, Yihan; Zhao, Ling

    2017-04-01

    During the application of protonic ceramic fuel cells (PCFCs), Co species derived from Co-containing cathodes readily diffuse into electrolyte layer. In this study, the influence of cobalt doping on the sintering and protonic conducting properties of BaZr0.1Ce0.7Y0.1Yb0.1O3-δ (BZCYYb) electrolytes is evaluated. The Co-doped BZCYYb oxides prepared by a sol-gel way exhibit the orthorhombic perovskite structure. A trade-off relation between the sinterability and protonic conductivity of Co doped BZCYYb oxides is identified. Furthermore, BaZr0.1Ce0.68Y0.1Yb0.1Co0.02O3-δ (BZCYYbC2) with a compromise between sinterability and protonic conductivity is further applied as electrolyte of a single cell. The single cell with BZCYYbC2 electrolyte demonstrates a competitive power density of 0.67 W cm-2 at 700 °C.

  4. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    SciTech Connect

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S.; Moura, Ana P. de; Freire, Poliana G.; Silva, Luis F. da; Longo, Elson; Munoz, Rodrigo A.A.; Lima, Renata C.

    2015-10-15

    We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

  5. Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

    NASA Astrophysics Data System (ADS)

    Sun, Xiaogang; Xing, Jun; Qiu, Jingping

    2016-06-01

    A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

  6. Synthesis of Ga-doped Ge-based apatites: Effect of dopant and cell symmetry on oxide ion conductivity

    SciTech Connect

    Kendrick, E.; Slater, P.R.

    2008-12-01

    Apatite-type rare earth silicates/germanates are attracting significant interest as a new class of oxide ion conductors. For the germanates, La{sub 9.33+x}(GeO{sub 4}){sub 6}O{sub 2+3x/2}, it has been shown that, depending on composition, the cell can be either hexagonal or triclinic, with evidence for reduced low temperature conductivities for the latter, attributed to increased defect trapping in this lower symmetry cell. In this paper the effect of Ga doping on the cell symmetry and conductivity is reported, with the observation of triclinic cells across the series La{sub 10}(GeO{sub 4}){sub 6-x}(GaO{sub 4}){sub x}O{sub 3-x/2}. Through co-doping with Y on the La site, i.e. La{sub 8}Y{sub 2}(GeO{sub 4}){sub 6-x}(GaO{sub 4}){sub x}O{sub 3-x/2}, it is shown that hexagonal cells are obtained, and the dependence of the conductivity on oxygen content/Ga content is discussed. In particular it is shown that the stabilisation of the hexagonal cell through Y doping enhances the low temperature conductivity.

  7. Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Dong, Guohua; Tan, Guoqiang; Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-06-01

    Pure BiFeO3 (BFO) and Mn, Cu co-doped BiFeO3 (BFMCO) thin films were deposited on fluorine doped tin oxide (FTO) substrates by a chemical solution deposition method. Detailed investigations were made on the effects of Mn and Cu co-doping on the crystal structure, the defect chemistry, multiferroic properties of the BFO thin films. With the co-doping of Mn and Cu, a structural transition from the rhombohedral (R3c:H) to the biphasic structure (R3c:H + P1) is confirmed by XRD, Rietveld refinement and Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows that the coexistence of Fe2+/Fe3+ and Mn2+/Mn3+ ions in the co-doping films are demonstrated. Meanwhile, the way of the co-doping at B-sits is conducive to suppress Fe valence state of volatility and to decrease oxygen vacancies and leakage current. It's worth noting that the co-doping can induce the superior ferroelectric properties (a huge remanent polarization, 2Pr ∼ 220 μC/cm2 and a relatively low coercive field, 2Ec ∼ 614 kV/cm). The introduction of Mn2+ and Cu2+ ions optimizes the magnetic properties of BFO thin films by the biphasic structure and the destruction of spin cycloid.

  8. Er{sup 3+}/Yb{sup 3+}co-doped bismuth molybdate nanosheets upconversion photocatalyst with enhanced photocatalytic activity

    SciTech Connect

    Adhikari, Rajesh; Gyawali, Gobinda; Cho, Sung Hun; Narro-García, R.; Sekino, Tohru; Lee, Soo Wohn

    2014-01-15

    In this paper, we report the microwave hydrothermal synthesis of Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst. Crystal structure, morphology, elemental composition, optical properties and BET surface area were analyzed in detail. Infrared to visible upconversion luminescence at 532 nm and 546 nm of the co-doped samples was investigated under excitation at 980 nm. The results revealed that the co-doping of Er{sup 3+}/Yb{sup 3+} into Bi{sub 2}MoO{sub 6} exhibited enhanced photocatalytic activity for the decomposition of rhodamine B under simulated solar light irradiation. Enhanced photocatalytic activity can be attributed to the energy transfer between Er{sup 3+}/Yb{sup 3+} and Bi{sub 2}MoO{sub 6} via infrared to visible upconversion from Er{sup 3+}/Yb{sup 3+} ion and higher surface area of the Bi{sub 2}MoO{sub 6} nanosheets. Therefore, this synthetic approach may exhibit a better alternative to fabricate upconversion photocatalyst for integral solar light absorption. - Graphical abstract: Schematic illustration of the upconversion photocatalysis. Display Omitted - Highlights: • Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst is successfully synthesized. • We obtained the nanosheets having high surface area. • Upconversion of IR to visible light was confirmed. • Upconversion phenomena can be utilized for effective photocatalysis.

  9. Effects of Li+ ions on the enhancement of up-conversion emission in Ho3+-Yb3+ co-doped transparent glass-ceramics containing Ba2LaF7 nanocrystals

    NASA Astrophysics Data System (ADS)

    Li, Zhencai; Zhou, Dacheng; Yang, Yong; Gao, Yuan; Ren, Peng; Qiu, Jianbei

    2016-10-01

    The up-conversion (UC) emission of Ho3+-Yb3+ and Li+ co-doped transparent glass ceramics 45SiO2-15Al2O3-12Na2CO3-21BaF2-7LaF3-0.2HoF3-1YbF3-xLi2CO3 (x = 0, 0.5, 1, 2, 4 and 6 mol%) containing Ba2LaF7 nanocrystals were investigated. These glass ceramics samples were prepared using the conventional quenching techniques. The Ba2LaF7 nanocrystals precipitated from the glass matrix was confirmed by X-ray diffraction (XRD). Compared with the glass ceramics sample without Li+, the UC emission intensity of glass ceramics samples with Li+ were enhanced. It can be proved that the Li+ can affect the enhancement up-conversion (UC) emission. Particularly, the green UC emission intensity band centered at 546 nm was strongly increased twice with the concentration of Li+ increasing up to 4 mol%. Through the comparison and analysis of the energy graph, it was shown that the 5F4/5S2→5I8 transition of Ho3+ ion obtained the green (546 nm) light. There are two weak fluorescences in the red (657 nm) region and near infrared (753 nm) region of spectrum, which is the 5F4/5S2→5I7 and 5F5→5I8 transition of Ho3+. Therefore, the emission results showed that the incorporation of Li+ ions into the Ba2LaF7:Eu3+ lattice could induce a remarkable change of the emission intensity in red region (R = IED/IMD) with 393 nm excitation wavelength. It was indicated that the symmetry of the lattice was destroyed by Li+ in glass ceramics. The possible mechanism responsible for the enhancement of UC emission in Ho-Yb co-doped was discussed.

  10. Photocatalytic performance of nitrogen, osmium co-doped TiO2 for removal of eosin yellow in water under simulated solar radiation.

    PubMed

    Kuvarega, Alex T; Krause, Rui W M; Mamba, Bhekie B

    2013-07-01

    Nitrogen, osmium co-doped TiO2 photocatalysts were prepared by a modified sol-gel method using ammonia as the nitrogen source and osmium tetroxide as the source of osmium. The role of rutile phase OsO2 in enhancing the photocatalytic activity of rutile TiO2 towards the degradation of Eosin Yellow was investigated. The materials were characterised by various techniques that include FTIR, Raman, XRD, SEM, EDS, TEM, TGA and DRUV-Vis. The amorphous, oven dried sample was transformed to the anatase and then the rutile phase with increasing calcination temperature. DRUV-Vis analysis revealed a red shift in absorption with increasing calcination temperature, confirmed by a decrease in the band gap of the material. The photocatalytic activity of N, Os co-doped TiO2 was evaluated using eosin yellow degradation and activity increased with increase in calcination temperature under simulated solar irradiation. The rutile phase of the co-doped TiO2 was found to be more effective in degrading the dye (k(a) = 1.84 x 10(-2) min(-1)) compared to the anatase co-doped phase (k(a) = 9.90 x 10(-3) min(-1)). The enhanced photocatalytic activity was ascribed to the synergistic effects of rutile TiO2 and rutile OsO2 in the N, Os co-doped TiO2.

  11. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction.

    PubMed

    Singh, Vijay; Haritha, P; Venkatramu, V; Kim, S H

    2014-05-21

    Combustion derived Er(3+) -doped Y2O3 and Er(3+)/Yb(3+)co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders were studied under 379nm excitation. The strong up-conversion luminescence for Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders have been observed under 978nm laser excitation. The effect of Yb(3+) addition on optical and luminescence properties of Er(3+):Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er(3+) -doped Y2O3 is co-doped with Yb(3+) ions. The effect of co-doping of Yb(3+) ions on the visible luminescence intensity of Er(3+) has been studied and the mechanism responsible for the variation in the green and red intensity is discussed.

  12. Spectroscopic properties and energy transfer in Er-Tm co-doped bismuth silicate glass

    NASA Astrophysics Data System (ADS)

    Wang, Xin; Li, Zhilan; Li, Kefeng; Zhang, Lei; Cheng, Jimeng; Hu, Lili

    2013-10-01

    In this paper, we investigate the spectroscopic properties of and energy transfer processes in Er-Tm co-doped bismuth silicate glass. The Judd-Ofelt parameters of Er3+ and Tm3+ are calculated, and the similar values indicate that the local environments of these two kinds of rare earth ions are almost the same. When the samples are pumped at 980 nm, the emission intensity ratio of Tm:3F4 → 3H6 to Er:4I13/2 → 4I15/2 increases with increased Er3+ and Tm3+ contents, indicating energy transfer from Er:4I13/2 to Tm:3F4. When the samples are pumped at 800 nm, the emission intensity ratio of Er:4I13/2 → 4I15/2 to Tm:3H4 → 3F4 increases with increased Tm2O3 concentration, indicating energy transfer from Tm:3H4 to Er:4I13/2. The rate equations are given to explain the variations. The microscopic and macroscopic energy transfer parameters are calculated, and the values of energy transfer from Er:4I13/2 to Tm:3F4 are found to be higher than those of the other processes. For the Tm singly-doped glass pumped at 800 nm and Er-Tm co-doped glass pumped at 980 nm, the pumping rate needed to realize population reversion is calculated. The result shows that when the Er2O3 doping level is high, pumping the co-doped glass by a 980 nm laser is an effective way of obtaining a low-threshold ˜2 μm gain.

  13. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications.

  14. Effect of Ga on the Wettability of CuGa10 on 304L Steel

    NASA Astrophysics Data System (ADS)

    Silze, Frank; Wiehl, Gunther; Kaban, Ivan; Kühn, Uta; Eckert, Jürgen; Pauly, Simon

    2015-08-01

    In the present work, the effect of Ga on the wetting behavior of the Cu-rich braze filler CuGa10 (wt pct, Cu90.8Ga9.2 at. pct) on the steel 304L was investigated. For this, the macroscopic and microscopic effects governing the wetting of pure Ga, pure Cu, and CuGa10 alloy (wt pct) on the austenitic steel were analyzed and compared. Contact angle and surface tension measurements were carried out by means of the sessile drop technique, and, in addition, the phase formation at the interface was determined. Pure liquid Ga spreads on 304L, which supposedly is related to the formation of intermetallic Fe-Ga phases growing into the liquid Ga. Depending on the annealing time, FeGa3 and Fe14.5Ga12 were identified. In contrast, CuGa10 as well as pure Cu shows secondary wetting on the steel surface. Especially, liquid Cu prefers spreading laterally and vertically along the grain boundaries of the steel substrate. In spite of rather similar mechanisms, CuGa10 wets 304L steel at lower rate than pure Cu above the liquidus temperature.

  15. Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells

    NASA Astrophysics Data System (ADS)

    Ren, Xianpei; Cai, Lihan; Fan, Baodian; Cheng, Haoran; Zheng, Songsheng; Chen, Chao

    2013-12-01

    This letter focuses on the evolution under illumination of the minority carrier lifetime and conversion efficiency of p-type gallium (Ga) co-doped solar grade multicrystalline silicon wafers and solar cells. We present experimental data regarding the concentration of boron-oxygen (B-O) defects in this silicon when subjected to illumination, and the concentration was found to depend on [B]-[P] rather than [B] or the net doping p0([B] + [Ga] - [P]). This result implies that the compensated B is unable to form the B-O defect. Minority carrier lifetime and EQE measurements at different degradation states indicate that the B-O defect and Fe-acceptor pairs are the two key centers contributed to LID in this material.

  16. Toward an ultra-broadband emission source based on the bismuth and erbium co-doped optical fiber and a single 830nm laser diode pump.

    PubMed

    Zhang, Jianzhong; Sathi, Zinat M; Luo, Yanhua; Canning, John; Peng, Gang-Ding

    2013-03-25

    We demonstrate a broadband optical emission from Bi/Er co-doped fiber and a single 830nm laser diode pump. The ultra-broadband mechanism is studied and discussed in details based on a combination of experimental measurements, including luminescence, differential luminescence and ESA, on fiber samples of different Bi and Er concentrations. The Er co-doping in Bi doped fiber is found to be effective for broadband emission, by enhancing not only luminescence at C and L bands but also that at O and shorter wavelength bands. The luminescence intensity between 1100 and 1570nm is over -45dBm/5nm in single mode fiber using a few meters of Bi/Er co-doped fiber and offers a modest ~40dB dynamic range and a broad bandwidth of ~470nm for an OSA based spectral measurement.

  17. Photocatalytic decomposition of perfluorooctanoic acid by iron and niobium co-doped titanium dioxide.

    PubMed

    Estrellan, Carl Renan; Salim, Chris; Hinode, Hirofumi

    2010-07-15

    The photocatalytic decomposition of perfluorooctanoic acid (PFOA) in aqueous solution using Fe and Nb co-doped TiO(2) (Fe:Nb-TiO(2)) prepared by sol-gel method was investigated. The photocatalytic activity of Fe:Nb-TiO(2) towards PFOA degradation was compared to that of pure TiO(2) synthesized using the same method, and that of the commercially available TiO(2) photocatalyst, Aeroxide TiO(2) P25 (AO-TiO(2) P25). The photocatalysts were characterized by XRD, DRS, BET-N(2) adsorption isotherm, and SEM-EDX techniques and the data were correlated to the photocatalytic activity. Fe:Nb-TiO(2) showed the highest activity compared to the undoped TiO(2) and the commercially available TiO(2). Such activity was attributable to the effects of co-doping both on the physico-chemical properties and surface interfacial charge transfer mechanisms. Perfluorocarboxylic acids (PFCAs) with shorter carbon chain length and fluoride ions were identified as photocatalytic reaction intermediates and products.

  18. Thermoelectric performance of co-doped SnTe with resonant levels

    NASA Astrophysics Data System (ADS)

    Zhou, Min; Gibbs, Zachary M.; Wang, Heng; Han, Yemao; Li, Laifeng; Snyder, G. Jeffrey

    2016-07-01

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (nH) and extrinsic dopant concentration (NI, NAg) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured nH. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300-773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  19. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  20. Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

    NASA Astrophysics Data System (ADS)

    Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

    2016-08-01

    Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

  1. Local structure analysis of diluted magnetic semiconductor Co and Al co-doped ZnO nanoparticles

    SciTech Connect

    Hyodo, K.; Morimoto, S.; Yamazaki, T.; Ishikawa, T.; Ichiyanagi, Y.; Utsumi, J.

    2016-02-01

    In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co)O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO{sub 2}. X-ray diffraction (XRD) results showed Zn(Al, Co)O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

  2. Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

    PubMed

    Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

    2015-11-01

    Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process.

  3. Electric double layer capacitors employing nitrogen and sulfur co-doped, hierarchically porous graphene electrodes with synergistically enhanced performance

    NASA Astrophysics Data System (ADS)

    Kannan, Aravindaraj G.; Samuthirapandian, Amaresh; Kim, Dong-Won

    2017-01-01

    Hierarchically porous graphene nanosheets co-doped with nitrogen and sulfur are synthesized via a simple hydrothermal method, followed by a pore activation step. Pore architectures are controlled by varying the ratio of chemical activation agents to graphene, and its influence on the capacitive performance is evaluated. The electric double layer capacitor (EDLC) assembled with optimized dual-doped graphene delivers a high specific capacitance of 146.6 F g-1 at a current density of 0.8 A g-1, which is higher than that of cells with un-doped and single-heteroatom doped graphene. The EDLC with dual-doped graphene electrodes exhibits stable cycling performance with a capacitance retention of 94.5% after 25,000 cycles at a current density of 3.2 A g-1. Such a good performance can be attributed to synergistic effects due to co-doping of the graphene nanosheets and the presence of hierarchical porous structures.

  4. Preparation and characterization of zinc and copper co-doped WO3 nanoparticles: Application in photocatalysis and photobiology.

    PubMed

    Mohammadi, Sanaz; Sohrabi, Maryam; Golikand, Ahmad Nozad; Fakhri, Ali

    2016-08-01

    In this study, pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles samples were prepared by precipitation and co-precipitation methods. These nanoparticles were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), Dynamic light scattering (DLS), UV-visible and photoluminescence (PL) spectroscopy. The synthesized pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles have smart optical properties and average sizes with 3.2, 3.12, 3.08 and 2.97eV of band-gap, 18.1, 23.2, 25.7 and 30.2nm, respectively. Photocatalytic activity of four nanoparticles was studying towards degradation of gentamicin antibiotic under ultraviolet and visible light irradiation. The result showed that Zn,Cu co-doped WO3 possessed high photocatalytic activity. The photocatalytic activity of WO3 nanoparticles could be remarkably increased by doping the Zn and Cu impurity. This can be attributed to the fact that the red shift of absorption edge and the trapping effect of the mono and co-doped WO3 nanoparticles. The research result presents a general and effective way to prepare different photocatalysts with enhanced visible and UV light-driven photocatalytic performance. Antibacterial activity of four different WO3 nanoparticles against Escherichia coli bacterium has been assessed by the agar disc method under light irradiation and dark medium. It is concluded from the present findings that WO3 nanoparticles can be used as an efficient antibacterial agent.

  5. Co-precipitation synthesis and characterization of Co doped SnO2 NPs, HSA interaction via various spectroscopic techniques and their antimicrobial and photocatalytic activities.

    PubMed

    Nasir, Zeba; Shakir, Mohammad; Wahab, Rizwan; Shoeb, Mohd; Alam, Parvez; Khan, Rizwan Hasan; Mobin, Mohammad; Lutfullah

    2017-01-01

    Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05) nanoparticles (NPs) of average size ∼30-40nm were synthesized by co-precipitation method. The interaction of Co doped SnO2 NPs with human serum albumin (HSA) and their photocatalytic and antimicrobial properties were studied. The structural analysis and morphology of Co doped SnO2 NPs were analysed via X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FT-IR). Besides the structural and morphological analysis, the interaction of Co doped SnO2 NPs with HSA were studied by UV-vis, Circular dichroism (CD) and fluorescence spectroscopy. Fluorescence quenching results suggest that Co doped SnO2 NPs interact with an HSA molecule through static mechanism. CD indicates that α-helicity of HSA increases due to the interaction of Co doped SnO2 NPs. The photocatalytic activities of the NPs with increased doping concentration were evaluated through a degradation process in the presence of methylene-blue (MB) dye under UV light irradiation, which exhibited that the surface area of NPs with increased doping concentration plays a major role in improving the photocatalytic activity. The antimicrobial effect of undoped and Co-doped SnO2 NPs was determined using agar-well diffusion method and analyzed against gram-positive bacteria (Bacillus Cereus MC 2434). In our results, we have found that as the doping concentration increases into NPs, zone of inhibition increases, which could be ascribed to the production of ROS and large surface area of the NPs.

  6. Intense up-conversion luminescence in Er3+/Yb3+ co-doped CeO2 powders.

    PubMed

    Singh, Vijay; Rathaiah, M; Venkatramu, V; Haase, Markus; Kim, S H

    2014-03-25

    The Er(3+) and Er(3+)/Yb(3+) co-doped CeO2 powders have been prepared by a urea combustion route. The structural, morphological, compositional and vibrational analysis of the Er(3+):CeO2 and Er(3+)/Yb(3+):CeO2 powders have been studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray and Fourier transform infrared spectroscopy. The optical and luminescence properties of Er(3+):CeO2 and Er(3+)/Yb(3+):CeO2 powders have been studied by using laser excited spectroscopy. The effects of Yb(3+) doping on up-conversion luminescence of Er(3+) co-doped CeO2 powders were studied. The ratio of red to green intensity is decreased in Er(3+):CeO2 whereas the ratio is increased in Er(3+)/Yb(3+):CeO2 powders with increase of power. The effect of co-doping with the Yb(3+) ions on the visible luminescence of Er(3+) and the energy transfer mechanism responsible for the variation in the green and red intensity are discussed. The results indicate that these materials may be suitable for display and light emitting devices.

  7. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect

    Hodges, C. Anaya Calvo, J.; Kuball, M.; Stoffels, S.; Marcon, D.

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  8. Nitrogen and cobalt co-doped zinc oxide nanowires - Viable photoanodes for hydrogen generation via photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Patel, Prasad Prakash; Hanumantha, Prashanth Jampani; Velikokhatnyi, Oleg I.; Datta, Moni Kanchan; Hong, Daeho; Gattu, Bharat; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

    2015-12-01

    Photoelectrochemical (PEC) water splitting has been considered as a promising and environmentally benign approach for efficient and economic hydrogen generation by utilization of solar energy. Development of semiconductor materials with low band gap, high photoelectrochemical activity and stability has been of particular interest for a viable PEC water splitting system. In this study, Co doped ZnO, .i.e., (Zn0.95Co0.05)O nanowires (NWs) was selected as the composition for further co-doping with nitrogen by comparing solar to hydrogen efficiency (SHE) of ZnO NWs with that of various compositions of (Zn1-xCox)O NWs (x = 0, 0.05, 0.1). Furthermore, nanostructured vertically aligned Co and N-doped ZnO, .i.e., (Zn1-xCox)O:N NWs (x = 0.05) have been studied as photoanodes for PEC water splitting. An optimal SHE of 1.39% the highest reported so far to the best of our knowledge for ZnO based photoanodes was obtained for the co-doped NWs, (Zn0.95Co0.05)O:N - 600 NWs generated at 600 °C in ammonia atmosphere. Further, (Zn0.95Co0.05)O:N-600 NWs exhibited excellent photoelectrochemical stability under illumination compared to pure ZnO NWs. These promising results suggest the potential of (Zn0.95Co0.05)O:N-600 NWs as a viable photoanode in PEC water splitting cell. Additionally, theoretical first principles study conducted explains the beneficial effects of Co and N co-doping on both, the electronic structure and the band gap of ZnO.

  9. Structural transitions and enhanced ferroelectricity in Ca and Mn co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Huang, Ji-Zhou; Shen, Yang; Li, Ming; Nan, Ce-Wen

    2011-11-01

    Ca and Mn co-doped BiFeO3 (BFO) thin films were fabricated on (111) Pt/Ti/SiO2/Si substrates via a simple solution approach. Enhanced ferroelectric properties were obtained in these Ca and Mn co-doped BFO films, e.g., large remnant polarization value (Pr ˜ 89 μC/cm2) and large remnant polarization to saturated polarization ratio (Pr/Ps ˜ 0.84) for Bi0.90Ca0.10Fe0.90Mn0.10O3 film. X-ray diffraction and Raman spectra of these films showed that B-site Mn doping causes substantial structural transition toward orthorhombic phase and A-site Ca doping facilitates an evolution to tetragonal phase with higher crystal symmetry. The structural transitions are in favor of enhanced ferroelectric properties in the BFO films. The approach of A and B site co-doping is proved to be effective in enhancing ferroelectric performance in multiferroic BFO films.

  10. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  11. Structural, Optical, and Magnetic Properties of Solution-Processed Co-Doped ZnS Thin Films

    NASA Astrophysics Data System (ADS)

    Goktas, A.; Mutlu, İ. H.

    2016-11-01

    Co-doped ZnS thin films have been grown on glass substrates using solution-processing and dip-coating techniques, and the impact of the Co doping level (0% to 5%) and film thickness on certain characteristics examined. X-ray diffraction study revealed that all the films possessed hexagonal crystal structure. Energy-dispersive x-ray analysis confirmed presence of Zn, Co, and S in the samples. Scanning electron microscopy showed that the film surface was homogeneous and dense with some cracks and spots. X-ray photoelectron spectroscopy confirmed introduction and integration of Co2+ ions into the ZnS thin films. Compared with undoped ZnS, optical studies indicated a reduction in optical bandgap energy ( E g) while the refractive index ( n), extinction coefficient ( k), and dielectric constants ( ɛ 1, ɛ 2) increased with film thickness ( t) and Co doping level (except for 5%). Photoluminescence spectra showed enhanced luminescence intensity as the Co concentration was increased, while the dependence on t showed an initial increase followed by a decrease. The origin of the observed low-temperature (5 K and 100 K) ferromagnetic order may be related to point defects such as zinc vacancies, zinc interstitials, and sulfide vacancies or to the grain-boundary effect.

  12. Photocatalytic removal of 2-nitrophenol using silver and sulfur co-doped TiO₂under natural solar light.

    PubMed

    Feilizadeh, Mehrzad; Delparish, Amin; Toufigh Bararpour, S; Abedini Najafabadi, Hamed; Mohammad Esmaeil Zakeri, S; Vossoughi, Manouchehr

    2015-01-01

    To overcome the drawback of poor solar light utilization brought about by the narrow photoresponse range of TiO₂, a silver and sulfur co-doped TiO₂was synthesized. Using the prepared catalyst, solar photocatalytic degradation of 2-nitrophenol (2-NP) by a TiO₂-based catalyst was studied for the first time. Effects of the co-doping on the structural, optical and morphological properties of the synthesized nanoparticles were investigated by different characterization methods: X-ray diffraction, N2 adsorption-desorption measurements, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, UV-visible diffuse reflectance spectroscopy and Fourier transform infrared spectroscopy. Solar experiments showed that the co-doping with silver and sulfur significantly increased the photocatalytic activity. In various initial concentrations of 2-NP more than 99% of the contaminant was decomposed by Ag-S/TiO₂in less than 150 minutes, while the degradation efficiency was much less in the presence of bare TiO₂. Kinetic studies suggested that solar photocatalytic degradation of 2-NP is consistent with the Langmuir-Hinshelwood model. The rate constant of the reaction and adsorption constant of the modified photocatalyst were found to be 2.4 and 4.1 times larger than that of bare TiO₂, respectively.

  13. Controlled fabrication of oriented co-doped ZnO clustered nanoassemblies.

    PubMed

    Barick, K C; Aslam, M; Dravid, Vinayak P; Bahadur, D

    2010-09-01

    Clustered nanoassemblies of Mn doped ZnO and co-doped ZnO (Mn, Sn co-doped ZnO; Mn, Sb co-doped ZnO; and Mn, Bi co-doped ZnO) were prepared by refluxing their respective precursors in diethylene glycol medium. The co-doping elements, Sn, Sb and Bi exist in multi oxidation states by forming Zn-O-M (M=Sb, Bi and Sn) bonds in hexagonal wurtzite nanostructure. The analyses of detailed structural characterization performed by XRD, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM), show that co-doping ions are successfully incorporated into the ZnO nanostructure and do not appear as precipitates or secondary phases. HRTEM analysis also confirmed the oriented attachment of nanocrystals as well as their defect structures. The formation/activation of higher amount of intrinsic host defects, for instance, oxygen vacancies in co-doped ZnO as compared to Mn doped ZnO sample is evident from Raman spectra. The doped and co-doped samples exhibit ferromagnetic like behavior at room temperature presumably due to the presence of defects. Specifically, it has been observed that the incorporation of dopant and co-dopants into ZnO structure can modulate the local electronic structure due to the formation/activation of defects and hence, cause significant changes in their structural, vibrational, optical and magnetic properties.

  14. Effects of surface barrier layer in AlGaAs/GaAs solar cells

    NASA Astrophysics Data System (ADS)

    Urabe, Hiroyuki; Kuramoto, Makoto; Nakano, Tomohiro; Kawaharazuka, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji

    2015-09-01

    In this paper, we report the effects of surface barrier layers on the characteristics of AlGaAs/GaAs solar cells. The external quantum efficiency (EQE) spectra for AlGaAs barrier samples with different barrier layer AlAs fractions and thickness of the surface barrier layer were measured to increase the solar cell efficiency. The results show that the surface barrier layer is effective to block diffusing photoexcited electrons to the surface while the thicker barrier layer absorbs higher energy photons to generate carriers which recombine at the surface. The optimal surface barrier structure is a 50 nm thick Al0.7Ga0.3As.

  15. Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, Oleg A.; Solodovnik, Maxim S.; Balakirev, Sergey V.; Mikhaylin, Ilya A.; Eremenko, Mikhail M.

    2017-01-01

    The molecular beam epitaxial growth of GaAs on the GaAs(001)-(2×4) surface is investigated using a kinetic Monte Carlo-based method. The developed algorithm permits to focus on the kinetic effects in a wide range of growth conditions and enables considerable computational speedup. The simulation results show that the growth rate has a dramatic influence upon both the island morphology and Ga surface diffusion length. The average island size reduces with increasing growth rate while the island density increases with increasing growth rate as well as As4/Ga beam equivalent pressure ratio. As the growth rate increases, the island density becomes weaker dependent upon the As4/Ga pressure ratio and approaches to a saturation value. We also discuss three characteristics of Ga surface diffusion, namely a diffusion length of a Ga adatom deposited first, an average diffusion length, and an island spacing as an average distance between islands. The calculations show that the As4/Ga pressure ratio dependences of these characteristics obey the same law, but with different coefficients. An increase of the As4/Ga pressure ratio leads to a decrease in both the diffusion length and island spacing. However, its influence becomes stronger with increasing growth rate for the first Ga adatom diffusion length and weaker for the average diffusion length and for the island spacing.

  16. Ferromagnetic semiconductor nanoclusters: Co-doped Cu2O

    NASA Astrophysics Data System (ADS)

    Antony, Jiji; Qiang, You; Faheem, Muhammad; Meyer, Daniel; McCready, David E.; Engelhard, Mark H.

    2007-01-01

    5% Co-doped cuprous oxide dilute magnetic semiconducting cluster film composed of two different sizes of crystalline nanoclusters, prepared using sputtering-aggregation technique is found to be ferromagnetic at 400K. With the increase in average crystallite size from 4.2to8nm, the coercivity increased. Magnetic field up to 2T is applied and saturation magnetization is achieved at 3kOe field in both cases. Cu2O phase is observed from cluster film deposited on Si wafer when analyzed using x-ray diffraction. Co in Cu2O host reveals a +2 oxidation state via x-ray photoelectron spectroscopy. Positive magnetoresistance from samples exhibits a temperature dependent decrease.

  17. Photogalvanic effects for interband absorption in AlGaN /GaN superlattices

    NASA Astrophysics Data System (ADS)

    Cho, K. S.; Chen, Y. F.; Tang, Y. Q.; Shen, B.

    2007-01-01

    The linear and circular photogalvanic effects (CPGEs), induced by ultraviolet (325nm) radiation, have been observed in the (0001)-oriented Al0.15Ga0.85N/GaN superlattices. The CPGE current changes sign upon reversing the radiation helicity, and it is up to two orders of magnitude larger than that obtained by far-infrared radiation. This result suggests the existence of a sizeable Rashba spin splitting in AlGaN /GaN superlattices. It also provides a possibility for the generation of spin orientation-induced current at room temperature.

  18. Enhanced photocatalytic degradation of humic acids using Al and Fe co-doped TiO2 nanotubes under UV/ozonation for drinking water purification.

    PubMed

    Yuan, Rongfang; Zhou, Beihai; Hua, Duo; Shi, Chunhong

    2013-11-15

    O3/UV/TiO2 was used to effectively decompose humic acids (HAs) in drinking water. To obtain a large specific surface area and low band gap energy, Al and Fe co-doped TiO2 nanotubes were successfully synthesized using the hydrothermal method. The effect of the optimal co-doped TiO2 nanotubes catalyst on the HAs removal efficiency through O3/UV/co-doped TiO2 process was investigated. The highest HAs removal efficiency (79.4%) that exhibited a pseudo-first-order rate constant of 0.172 min(-1) was achieved, in the presence of 550 °C calcined 1.0% co-doped TiO2 nanotubes with an Al:Fe ratio of 0.25:0.75. The effects of calcination temperature and doping concentration on anatase phase weight fractions, average crystallite sizes, Brunauer-Emmett-Teller surface area, catalyst band gap energy, and catalyst photocatalytic activity were also discussed. The inorganic anions also affected the catalyst photocatalytic ability. In a neutral solution, SO4(2-) slightly promoted HAs removal. However, HCO3(-) was found to significantly inhibit the catalyst activity, whereas Cl(-) had negligible effect on photocatalytic ability.

  19. Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaobo; Cheng, Tzu-Huan; Liu, Chee Wee

    2016-07-01

    The fluctuation of Ga content and absorption layer thickness of Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intracell Ga fluctuation degrades the open circuit voltage due to the minimum open circuit voltage in the parallel configuration, and also affects the short circuit current due to the Ga-dependent light absorption. The intercell Ga fluctuation leads to a more significant degradation for CIGS solar module efficiency than the intracell Ga fluctuation due to the additional degradation of the fill factor. The thickness fluctuation has a small effect on open circuit voltage, but causes strong degradation of short circuit current and fill factor, which leads to a more significant degradation on power conversion efficiency than Ga fluctuation to the same fluctuation percentage. In reality, the thickness can be tightly controlled within the fluctuation of 5% or less. [Figure not available: see fulltext.

  20. Nitrogen/phosphorus co-doped nonporous carbon nanofibers for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Yan, Xiaodong; Liu, Yuan; Fan, Xiaorong; Jia, Xiaolong; Yu, Yunhua; Yang, Xiaoping

    2014-02-01

    This study demonstrates a facile and effective approach to prepare nitrogen/phosphorus co-doped nonporous carbon nanofibers (N/P-NPCNFs) through the electrospinning of the polyacrylonitrile and phosphoric acid precursor solutions and subsequent thermal treatment. X-ray photoelectron spectroscopy analyses show that the contents of phosphorus and pyrrol-like nitrogen in N/P-NPCNFs can be tuned by controlling the amount of phosphoric acid. The maximum specific capacitance of 224.9 F g-1 is achieved at 0.5 A g-1 in 1 M H2SO4. Furthermore, the specific capacitance could still remain 155.5 F g-1 at 30 A g-1 with a high capacitance retention ratio of 70%. It is worth noting that no capacitance loss is observed over 8000 charge/discharge cycles, clearly demonstrating a robust long-term stability. The excellent electrochemical performance can be attributed to the synergetic effect of nitrogen and phosphorus functionalities.

  1. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  2. Hydrothermal synthesis and characterization of fluorine & manganese co-doped PZT based cuboidal shaped powder

    NASA Astrophysics Data System (ADS)

    Nawaz, H.; Shuaib, M.; Saleem, M.; Rauf, A.; Aleem, A.

    2016-08-01

    Cuboidal shaped PZT powder particles based composition Pb0.89(Ba, Sr)0.11(Zr0.52Ti0.48)O3 co- doped with 1 mol% manganese and 2 mol% fluorine was prepared through hydrothermal route. 200-250nm size cuboidal particles were observed under FE-SEM. XRD technique revealed that the perovskite type ceramic structure has a dominant rhombohedral phase. The resultant powder particles were then spray dried, uniaxially pressed and sintered at different temperatures to achieve maximum theoretical density. 98% density was obtained in the pellets at a sintering temperature of 1190°C with an average grain size of 1-3um. The electrical properties of sintered samples were also measured before and after poling to evaluate the effect of dopants on piezoelectric properties.

  3. Aqueous synthesis and characterization of Ni, Zn co-doped CdSe QDs

    NASA Astrophysics Data System (ADS)

    Thirugnanam, N.; Govindarajan, D.

    2016-01-01

    Ni, Zn co-doped CdSe quantum dots (QDs) were synthesized by chemical precipitation method through aqueous route. The prepared QDs were characterized by X-ray diffraction (XRD) technique, UV-Vis absorption spectroscopy, photoluminescence (PL) spectroscopy and high resolution transmission electron microscopy (HRTEM). XRD technique results indicate that the prepared samples have a zinc blende cubic phase. From UV-Vis absorption spectroscopy technique, the prepared samples were blue shifted with respect to their bulk counter part due to quantum confinement effect. Among different doping ratios examined, a maximum PL emission intensity was observed for CdSe:Ni(1 %):Zn(1 %) QDs. HRTEM pictures show that the prepared QDs were in spherical shape.

  4. Deposition of Co-doped TiO2 Thin Films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Boutlala, A.; Bourfaa, F.; Mahtili, M.; Bouaballou, A.

    2016-03-01

    Cobalt doped TiO2 thin films have been prepared by sol-gel method onto glass substrate at room temperature. in this present work, we are interesting to study the effect of Cobalt doped TiO2 thin films.the concentration of Co was varied from 0 to 6%at .The obtained films have been annealed at 500°C for 2 hours. X-ray diffraction patterns showed that Co: TiO2 films are polycrystalline with a tetragonal anatase and orthorhombic brookite types structures. The surface morphologies of the TiO2 doped with cobalt thin films were evaluated by Atomic Force Microscopy (AFM). The optical properties were studied by mean of UV-visible and near infrared spectroscopy.The calculated optical band gap decreases from 3.30 to 2.96 eV with increasing Co doping.

  5. Enhanced photocatalytic degradation of dye under visible light on mesoporous microspheres by defects in manganese- and nitrogen-co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Feng, Lu; Jiang, Heng; Zou, Mingming; Xiong, Fengqiang; Ganeshraja, Ayyakannu Sundaram; Pervaiz, Erum; Liu, Yinan; Zou, Shunying; Yang, Minghui

    2016-09-01

    Manganese- and nitrogen-co-doped mesoporous TiO2 microsphere photocatalysts are prepared by a simple sol-gel method with controllable sizes in the range of 400-500 nm and high surface area of 112 m2 g-1. Manganous acetate is the Mn source, and ammonia gas is the nitrogen source used. The dopants are found to be uniformly distributed in the TiO2 matrix. Interestingly, in (Mn,N)-co-doped TiO2, we observe an effective indirect band gap of 2.58 eV. (Mn,N)-co-doped mesoporous TiO2 microspheres show higher photocatalytic activity than Mn-TiO2 microspheres under visible light irradiation. Among the samples reported in this work, 0.2 at.% Mn doping and 500 °C 2-h nitriding condition give the highest photocatalytic activity. The observed photocatalytic activity in the (Mn,N)-co-doped TiO2 is attributed to the contribution from improved absorption due to trap levels of Mn, oxygen vacancies and N doping.

  6. Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties

    NASA Astrophysics Data System (ADS)

    Wang, Yao; Huang, Hongwei; Quan, Chaoming; Tian, Na; Zhang, Yihe

    2016-01-01

    We demonstrated for first time the tunable photoluminescence (PL) properties and photocatalytic activity of the Tb3+ and Eu3+ co-doped BiPO4 assemblies. They are fabricated via a facile hydrothermal approach. Through co-doping of Eu3+ and Tb3+ ions and changing the doping ratio, the emission color of the co-doped BiPO4 phosphors can be tuned precisely from green to yellow and red. Meanwhile, a very efficient energy transfer from Tb3+ to Eu3+ can be observed. Fascinatingly, a warmwhite color has been realized in the co-doped sample by tuning the ratio of Tb3+/Eu3+ to a certain value as displayed in the CIE chromaticity diagram. The doped BiPO4 samples also exhibit significantly enhanced photocatalytic activity compared to the pristine BiPO4 pertaining to Rhodamine (RhB) degradation under UV light. This enhancement should be attributed to the trapping electron effect induced by ion doping that endows BiPO4 with high separation of photoinduced electron-hole pairs, thereby greatly promoting the photocatalytic reactivity. It was corroborated by the electrochemical impedance spectra (EIS). Moreover, the crystal structure, microstructure and optical properties of as-prepared samples were investigated in details.

  7. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  8. Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Hsu, H. S.; Chung, P. Y.; Zhang, J. H.; Sun, S. J.; Chou, H.; Su, H. C.; Lee, C. H.; Chen, J.; Huang, J. C. A.

    2010-07-01

    We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

  9. Enhancement of luminescence emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor by Li{sup +} co-doping

    SciTech Connect

    Gavrilović, Tamara V.; Jovanović, Dragana J. Lojpur, Vesna M.; Đorđević, Vesna; Dramićanin, Miroslav D.

    2014-09-15

    This paper demonstrates the effects of Li{sup +} co-doping on the structure, morphology, and luminescence properties of GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor prepared using a high-temperature solid-state chemistry method. The GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} powders synthesized with the Li{sup +} co-dopant (in concentrations of 0, 5, 10, and 15 mol%) are characterized by X-ray powder diffraction, scanning electron microscopy, and photoluminescence spectroscopy. Structural analysis showed that powders co-doped with Li{sup +} have larger crystallite sizes and slightly smaller crystal lattice parameters than powders prepared without Li{sup +} ions. Photoluminescence down-conversion (345-nm excitation) and up-conversion (980-nm excitation) spectra show characteristic Er{sup 3+} emissions, with the most intense bands peaking at 525 nm ({sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} transition) and 552 nm ({sup 4}S{sub 3/2}→{sup 4}I{sub 15/2}). The intensity of up-conversion emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} is enhanced (by a factor of four) by co-doping with 5 mol% of Li{sup +} ions. The mechanisms responsible for this emission enhancement are discussed. - Graphical abstract: UC emission spectra for GdVO{sub 4}:1.5-mol% Er{sup 3+}/20-mol% Yb{sup 3+} powders co-doped with different concentrations of Li{sup +} ions, recorded under 980-nm excitation. - Highlights: • 5-mol% Li{sup +} co-doped powders have 400% enhanced up-conversion emission intensity. • 15-mol% Li{sup +} co-doping produces 40% higher emission in down-conversion. • Li{sup +} co-doped powders have larger crystallite size and smaller lattice parameters.

  10. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition

    SciTech Connect

    Yao, Dan; Shi, Lei Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-21

    The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  11. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    SciTech Connect

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-06-15

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L{sub 3,2} NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L{sub 3,2} edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles.

  12. Effect of Fe and Co doping on electrical and thermal properties of La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}(Fe, Co){sub x}O{sub 3} manganites

    SciTech Connect

    Varshney, Dinesh; Mansuri, Irfan; Shaikh, M.W.; Kuo, Y.K.

    2013-11-15

    Graphical abstract: - Highlights: • Low temperature resistivity minimum contributes to Coulomb and Kondo scattering. • Metallic resistivity shows electron, magnon and phonon scattering are significant. • At high temperatures small polaron conduction mechanism is viable. • Susceptibility measurements show ferromagnetic–paramagnetic transition. - Abstract: The effect of Fe and Co doping on structural, electrical and thermal properties of half doped La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}(Fe, Co){sub x}O{sub 3} is investigated. The structure of these crystallizes in to orthorhombically distorted perovskite structure. The electrical resistivity of La{sub 0.5}Ce{sub 0.5}MnO{sub 3} exhibits metal-semiconductor transition (T{sub MS} at ∼225 K). However, La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}TM{sub x}O{sub 3} (TM = Fe, Co; 0.0 ≤ x ≤ 0.1) manganites show semiconducting behavior. The thermopower measurements infer hole as charge carriers and electron–magnon as well spin wave fluctuation mechanism are effective at low temperature domain and SPC model fits the observed data at high temperature. The magnetic susceptibility measurement confirms a transition from paramagnetic to ferromagnetic phase. The observed peaks in the specific heat measurements, shifts to lower temperatures and becomes progressively broader with doping of transition metals on Mn-site. The thermal conductivity is measured in the temperature range of 10–350 K with a magnitude in between 10 and 80 mW/cm K.

  13. On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

    SciTech Connect

    Tsai, Jung-Hui

    2015-02-09

    The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which can be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.

  14. InGaAs/GaAs Quantum Dots: Effects of Ensemble Interactions, Interdiffusion, Segregation and Proton Irradiation

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2000-01-01

    A sumary or recent experimental findings on the effects of interdiffusion, segregation, strained ensemble interactions and proton irradiation on the optical properties of InGaAs/GaAs quantum dots (QDs) are presented.

  15. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  16. HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

    NASA Astrophysics Data System (ADS)

    Rohrbaugh, Nathaniel; Hernandez-Balderrama, Luis; Kaess, Felix; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

    2016-06-01

    This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.

  17. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  18. Theoretical study of electrolyte gate AlGaN /GaN field effect transistors

    NASA Astrophysics Data System (ADS)

    Bayer, M.; Uhl, C.; Vogl, P.

    2005-02-01

    We predict the sensitivity of solution gate AlGaN /GaN field effect transistors to pH values of the electrolyte and to charged adsorbates at the semiconductor-electrolyte interface. Invoking the site-binding model for the chemical reactions at the oxidic semiconductor-electrolyte interface and taking into account the large polarization fields within the nitride heterostructure, the spatial charge and potential distribution have been calculated self-consistently both in the semiconductor and the electrolyte. In addition, the source-drain current is calculated and its sensitivity to the electrolyte's pH value is studied systematically. Comparison with experiment shows good agreement. A significantly enhanced resolution is predicted for AlGaN /GaN structures of N-face polarity.

  19. Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM=Co, Ni) thin films by sol-gel spin coating method.

    PubMed

    Siddheswaran, R; Mangalaraja, R V; Tijerina, Eduardo P; Menchaca, J-Luis; Meléndrez, M F; Avila, Ricardo E; Jeyanthi, C Esther; Gomez, M E

    2013-04-01

    Effect of transition metal oxides (TM=Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540cm(-1) due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

  20. Self-interaction effects in (Ga,Mn)As and (Ga,Mn)N

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Spaldin, Nicola A.; Sanvito, Stefano

    2005-02-01

    The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-spin density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weakly correlated As p-Mn d hybridized bands and the Mn 3d character is distributed through the whole valence band manifold. This result validates the extensive literature of LSDA studies on (Ga,Mn)As, including the conclusion that the ferromagnetism is hole-mediated. In contrast, the LSDA gives a qualitatively incorrect band structure for (Ga,Mn)N, which is characterized by localized Mn 3d bands with very strong self-interaction. Our pseudo-SIC calculations show a highly confined hole just above the Fermi energy in the majority band manifold. Such a band arrangement is consistent with (although by no means conclusive evidence for) a recent suggestion [Phys. Rev. B 033203 (2002)] that formation of Zhang-Rice magnetic polarons is responsible for hole-mediated ferromagnetism in (Ga,Mn)N.

  1. Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Sarau, George; Heilmann, Martin; Christiansen, Silke; Kumar, Vikram; Singh, R.

    2017-01-01

    The effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires from β-Ga2O3 nanowires is reported in this work. High quality wurtzite GaN material showing a single c-plane phase is achieved from β-Ga2O3 nanowires having monoclinic crystal structure at a high ammonification temperature of 1050 °C. Lower ammonification temperatures such as 900 °C are also adequate for achieving coaxial GaN/Ga2O3 nanowire heterostructures, and the degree of GaN phase can be adjusted by varying the ammonification temperature. The crystalline quality of GaN/Ga2O3 nanowires improves with increasing the ammonification temperature. Resonant Raman spectra of GaN/Ga2O3 nanowires show Raman progression through multiple longitudinal-optical-phonon modes with overtones of up to second order. The development and improvement of the emission peak toward the near band edge of GaN at different ammonification temperatures were investigated using cathodoluminescence and photoluminescence characterization.

  2. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    SciTech Connect

    Santos, Daniel A.A.; Zeng, Hao; Macêdo, Marcelo A.

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  3. Wiedemann effect of Fe—Ga based magnetostrictive wires

    NASA Astrophysics Data System (ADS)

    Li, Ji-Heng; Gao, Xue-Xu; Zhu, Jie; Bao, Xiao-Qian; Cheng, Liang; Xie, Jian-Xin

    2012-08-01

    (Fe83Ga17)98Cr2 wires each with a diameter of 0.7 mm are prepared by hot swaging and warm drawing from the casting rods directly, because the ductility of Fe83Ga17 alloy is improved by adding Cr element. The Wiedemann twists and dependences on magnetostrictions of Fe83Ga17 and (Fe83Ga17)98Cr2 wires are investigated. The largest observed Wiedemann twists of 245 s·cm-1 and 182 s·cm-1 are detected in the annealed Fe83Ga17 and (Fe83Ga17)98Cr2 wires, respectively. The magnetostrictions of the annealed Fe83Ga17 and (Fe83Ga17)98Cr2 wires are 160 ppm and 107 ppm, respectively. The maximum of the Wiedemann twist increases with magnetostriction increasing. However the magnetostriction is just one important factor that affects the Wiedemann effect of alloy wire, and the relationship between magnetostriction and Wiedemann effect is a complex function rather than a simple function.

  4. Combined effects of Li content and sintering temperature on polymorphic phase boundary and electrical properties of Li/Ta co-doped (Na, K)NbO3 lead-free piezoceramics

    NASA Astrophysics Data System (ADS)

    Shen, Zong-Yang; Wang, Ke; Li, Jing-Feng

    2009-12-01

    Crystallographic structure, phase transition and electrical properties of lead-free (Na0.535K0.485)1- x Li x (Nb0.942Ta0.058)O3 ( x=0.042-0.098) (NKL x NT) piezoelectric ceramics were investigated. The experimental results show that both Li content and sintering temperature strongly affect the orthorhombic-tetragonal polymorphic phase boundary (PPB), which results in remarkable differences of the piezoelectric property and its temperature stability in the NKL x NT ceramics. Chemical analysis indicates that sodium volatilizes more seriously than potassium and lithium with increasing sintering temperature. Due to the comprehensively optimized effects of Li content and sintering temperature, an enhanced piezoelectric constant d 33 (276 pC/N) was obtained at room temperature in the ceramics with x=0.074 sintered at 1000°C. In the same composition, a further high d 33 up to 354 pC/N was obtained at 43°C, which is close to its T o-t temperature. Furthermore, better temperature stability can be obtained when x=0.082 sintered at 1000°C, whose piezoelectric constant d 33 (236 pC/N) keeps almost constant from room temperature to 100°C. Such a temperature-independent piezoelectric property is available in the NKL x NT ceramics with high Li content because its T o-t was moved below room temperature.

  5. Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth

    NASA Astrophysics Data System (ADS)

    Oto, Takao; Mizuno, Yutaro; Yanagihara, Ai; Ema, Kazuhiro; Kishino, Katsumi

    2017-04-01

    The effect of the structural properties on the optical characteristics was investigated for In0.3Ga0.7N nanocolumns (NCs) grown on GaN NCs as a function of GaN column diameter, D GaN. With increasing D GaN, the photoluminescence spectra changed from single-peak to double-peak emissions at the diameter D 0 where InGaN axial NCs change to InGaN–InGaN core–shell NCs. For the core–shell NCs, the volume recombination probabilities of the InGaN cores did not change with D GaN. Whereas the surface recombination probability of the InGaN cores exponentially decreased because of the spontaneous formation of InGaN shells for D GaN > D 0, it drastically increased for D GaN ≤ D 0.

  6. Effect of doping (C or N) and co-doping (C+N) on the photoactive properties of magnetron sputtered titania coatings for the application of solar water-splitting.

    PubMed

    Rahman, M; Dang, B H Q; McDonnell, K; MacElroy, J M D; Dowling, D P

    2012-06-01

    The photocatalytic splitting of water into hydrogen and oxygen using a photoelectrochemical (PEC) cell containing titanium dioxide (TiO2) photoanode is a potentially renewable source of chemical fuels. However, the size of the band gap (-3.2 eV) of the TiO2 photocatalyst leads to its relatively low photoactivity toward visible light in a PEC cell. The development of materials with smaller band gaps of approximately 2.4 eV is therefore necessary to operate PEC cells efficiently. This study investigates the effect of dopant (C or N) and co-dopant (C+N) on the physical, structural and photoactivity of TiO2 nano thick coating. TiO2 nano-thick coatings were deposited using a closed field DC reactive magnetron sputtering technique, from titanium target in argon plasma with trace addition of oxygen. In order to study the influence of doping such as C, N and C+N inclusions in the TiO2 coatings, trace levels of CO2 or N2 or CO2+N2 gas were introduced into the deposition chamber respectively. The properties of the deposited nano-coatings were determined using Spectroscopic Ellipsometry, SEM, AFM, Optical profilometry, XPS, Raman, X-ray diffraction UV-Vis spectroscopy and tri-electrode potentiostat measurements. Coating growth rate, structure, surface morphology and roughness were found to be significantly influenced by the types and amount of doping. Substitutional type of doping in all doped sample were confirmed by XPS. UV-vis measurement confirmed that doping (especially for C doped sample) facilitate photoactivity of sputtered deposited titania coating toward visible light by reducing bandgap. The photocurrent density (indirect indication of water splitting performance) of the C-doped photoanode was approximately 26% higher in comparison with un-doped photoanode. However, coating doped with nitrogen (N or N+C) does not exhibit good performance in the photoelectrochemical cell due to their higher charge recombination properties.

  7. Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gençyılmaz, O.; Atay, F.; Akyüz, I.

    2016-06-01

    In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350°C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV-Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co+2 ions substitute Zn+2 ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

  8. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  9. A "Solid Dual-Ions-Transformation" Route to S,N Co-Doped Carbon Nanotubes as Highly Efficient "Metal-Free" Catalysts for Organic Reactions.

    PubMed

    Wang, Fan; Song, Shuyan; Li, Kai; Li, Junqi; Pan, Jing; Yao, Shuang; Ge, Xin; Feng, Jing; Wang, Xiao; Zhang, Hongjie

    2016-12-01

    A green and cost-effective method, named the "solid dual-ions-transformation reaction", is reported to achieve the goal of successfully doping S and N into hollow carbon nanotubes. No harmful raw material is needed during the whole synthesis. Importantly, in the catalytic test of chemical reduction of p-nitrophenol by NaBH4 , the as-obtained S,N co-doped hollow carbon nanotubes exhibit ultrahigh catalytic performances.

  10. Effects of Ga ion-beam irradiation on monolayer graphene

    SciTech Connect

    Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei; Ge, Daohan

    2013-08-12

    The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

  11. Nitrogen and carbon co-doped Ni-TiO2 spindles for high performance electrochemical capacitor electrodes

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Cai, Xiaoyu; Jiang, Jinhui; Yan, Ming; Shi, Weidong

    2017-02-01

    Nitrogen and carbon co-doped Ni-TiO2 (nickel-titanium dioxide) spindles with hollow inner and good structural stability were facilely prepared by a direct precipitation method followed by annealing treatment. The unique composite shows a remarkably high capacitivity (223.7 F g-1 at 2 mV/s) and good rate capability (132.2 F g-1 at 100 mV s-1) when used as supercapacitor electrodes. In addition, the nitrogen and carbon co-doped Ni-TiO2 spindles also demonstrate good cycling stability (91.5% retention of the initial capacitance after 4000 cycles). The unique structure and seamlessly integration between different components generate synergistic effect to boost high performance and high electrical conductivity. The hollow inner also allows efficient diffusion of electrolyte and provides a more favorable path for charge penetration and transportation, which makes the good rate capability. The attractive performances make them potentially promising alternatives for the electrode materials of future energy storage devices.

  12. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor.

  13. Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

    SciTech Connect

    Tang, Kun Gu, Ran; Gu, Shulin Ye, Jiandong; Zhu, Shunming; Yao, Zhengrong; Xu, Zhonghua; Zheng, Youdou

    2015-04-07

    In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn} clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

  14. [Spectroscopic analysis of Er3+ in Er3+ /Yb3+ co-doped LiNbO3 crystal].

    PubMed

    Wang, Dun-Chun; Zhang, De-Long; Cui, Yu-Ming; Chen, Cai-He

    2005-12-01

    At room temperature, alpha-polarized absorption spectra of as-grown and annealed Er3+/Yb3+ co-doped, Z-cut LiNbO3 single crystals, grown by using Czochralski method, were measured in the wavelength range of 300-1 650 nm. The spectroscopic properties of Er3+ were analysed by using Judd-Ofelt theory. The experimental values of the electron transition strengths of several major transitions from the ground state to excited-state manifolds were evaluated from the measured integrated absorption coefficients of Er3+. The Judd-Ofelt parameters were determined by using least square method. According to the fitted Judd-Ofelt parameters, the spontaneous emission rates, the fluorescence branch ratios from the excited-state manifolds J to the lower-lying manifolds J', as well as the radiative lifetimes of the excited states were numerically calculated. In addition, Yb3+ co-doping and thermal anneal effects on the spectroscopic properties of Er3+ were also considered in this work.

  15. Tailoring the refractive index of aluminum doped zinc oxide thin films by co-doping with titanium

    NASA Astrophysics Data System (ADS)

    Wei, Tiefeng; Lan, Pinjun; Yang, Ye; Zhang, Xianpeng; Tan, Ruiqin; Li, Yong; Song, Weijie

    2012-12-01

    The refractive index of transparent conductive oxides has a direct effect on the transmission of lights into thin film solar cells. Here we report the study of improving the refractive index of aluminum doped zinc oxide through titanium co-doping. The Al-Ti co-doped zinc oxide (ATZO) thin films with different Ti doping concentration were deposited on glass substrates by radio frequency magnetron sputtering with ATZO targets in an argon atmosphere. The structural, optical and electrical properties of the thin films were investigated using X-ray diffraction, ultraviolet-visible-near-infrared spectroscopy and hall measurements, respectively. The results showed that the as-deposited thin films were all textured along c-axis and perpendicular to the surface of substrate. The average transmittance in the visible region were more than 80% for all the ATZO thin films. The minimum resistivity of the obtained ATZO (1 wt% TiO2 doping) thin films were 2.6 × 10-3 Ω cm and 1.4 × 10-3 Ω cm before and after annealing in vacuum, respectively. The refractive index of the thin films (at λ0 = 550 nm) increased from 1.91 to 2.05 as the TiO2 content increased from 0 wt% to 3 wt%.

  16. Study of energy transfer and spectral downshifting in Ce, RE (RE = Nd and Yb) co-doped lanthanum phosphate

    NASA Astrophysics Data System (ADS)

    Sawala, N. S.; Omanwar, S. K.

    2017-03-01

    The phosphors LaPO4 (Lanthanum phosphate) doped with Ce(III)/Ce3+ and co-doped with Ce3+-Nd3+ and Ce3+-Yb3+ were effectively synthesized by conventional solid state reaction method. The prepared samples were characterized by powder X-ray diffraction (XRD) and surface morphology was studied by scanning electronic microscope (SEM). The photoluminescence (PL) properties were studied by spectrophotometers in near infrared (NIR) and ultraviolet visible (UV-VIS) region. Additionally the luminescence time decay curves of samples were investigated to confirm energy transfer (ET) process. The Ce3+-Nd3+ ion co-doped LaPO4 phosphors can convert a photon of UV region (278 nm) into photons of NIR region (1058 nm). While Ce3+-Yb3+ ion doped LaPO4 phosphors convert photons of UV region (278 nm) into photons of NIR region (979 nm). The Ce3+ ion acts like sensitizer and Nd3+/Yb3+ ions act as activators. Both kinds of emissions are suitable for improving spectral response of solar cells.

  17. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    SciTech Connect

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/S co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.

  18. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    DOE PAGES

    Wu, Min; Xin, Huolin L.; Wang, Jie; ...

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/Smore » co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.« less

  19. Shuttle inhibition by chemical adsorption of lithium polysulfides in B and N co-doped graphene for Li-S batteries.

    PubMed

    Li, Fen; Su, Yan; Zhao, Jijun

    2016-09-14

    The advance of lithium sulfur batteries is now greatly restricted by the fast capacity fading induced by shuttle effect. Using first-principles calculations, various vacancies, N doping, and B,N co-doping in graphene sheets have been systematically explored for lithium polysufides entrapped in Li-S batteries. The LiS, LiC, LiN and SB bonds and Hirshfeld charges in the Li2S6 adsorbed defective graphene systems have been analyzed to understand the intrinsic mechanism of retaining lithium polysulfides in these systems. Total and local densities of states analyses elucidate the strongest adsorption sites among the N and B-N co-doped graphene systems. The overall electrochemical performance of Li-S batteries varies with the types of defects in graphene. Among the defective graphene systems, only the reconstructed pyrrole-like vacancy is effective for retaining lithium polysulfides. N doping induces a strong LiN interaction in the defective graphene systems, in which the pyrrolic N rather than the pyridinic N plays a dominant role in trapping of lithium polysulfides. The shuttle effect can be further depressed via pyrrolic B,N co-doped defective graphene materials, especially the G-B-N-hex system with extremely strong adsorption of lithium polysulfides (4-5 eV), and simultaneous contribution from the strong LiN and SB interactions.

  20. Structural and photoluminescence properties of Cd and Cu co-doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Samuel, T.; Sujatha, K.; Rao, K. Ramachandra; Rao, M. C.

    2016-05-01

    Cd and Cu co-doped ZnO nanoparticles were synthesized by Polyol method and subsequently have been characterized by their structure, optical and photoluminescence studies. XRD and PSA results revealed the formation of Cd and Cu co-doped ZnO nanoparticles with an average crystallite size of 50 nm and average particle size of 246 nm. From Zeta Potential measurements the Zeta Potential was found to be - 29.2 eV indicating the stability of prepared nanoparticles. From Uv-Vis studies, it is found that the absorption of undoped ZnO is less compared with Cd and Cu co-doped ZnO and the absorbance increases with increase in dopant concentration. Photoluminescence studies revealed that the samples are with high structural and optical quality.

  1. Phosphorus/sulfur Co-doped porous carbon with enhanced specific capacitance for supercapacitor and improved catalytic activity for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhou, Yao; Ma, Ruguang; Candelaria, Stephanie L.; Wang, Jiacheng; Liu, Qian; Uchaker, Evan; Li, Pengxi; Chen, Yongfang; Cao, Guozhong

    2016-05-01

    Phosphorus (P)/sulfur (S) co-doped porous carbon derived from resorcinol and furaldehyde are synthesized through one-step sol-gel processing with the addition of phosphorus pentasulfide as P and S source followed with freeze-drying and pyrolysis in nitrogen. The P/S co-doping strategy facilitates the pore size widening both in micropore and mesopore regions, together with the positive effect on the degree of graphitization of porous carbon through elimination of amorphous carbon through the formation and evaporation of carbon disulfide. As an electrode for supercapacitor application, P/S co-doped porous carbon demonstrates 43.5% improvement on specific capacitance of the single electrode compared to pristine porous carbon in organic electrolyte at a current of 0.5 mA due to the P-induced pseudocapacitive reactions. As for electrocatalytic use, promoted electrocatalytic activity and high resistance to crossover effects of oxygen reduction reaction (ORR) in alkaline media are observed after the introduction of P and S into porous carbon. After air activation, the specific capacitance of the single electrode of sample PS-pC reaches up to 103.5 F g-1 and an improved oxygen reduction current density.

  2. Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

    SciTech Connect

    Cho, Yong Chan; Kim, Sung-Jin; Lee, Seunghun; Kim, Su Jae; Cho, Chae Ryong; Nahm, Ho-Hyun; Park, Chul Hong; Jeong, Il Kyoung; Park, Sungkyun; Hong, Tae Eun; Kuroda, Shinji; Jeong, Se-Young

    2009-10-26

    We report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO.

  3. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  4. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    NASA Astrophysics Data System (ADS)

    Dhiman, Pooja; Chand, Jagdish; Verma, S.; Sarveena, Singh, M.

    2014-04-01

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  5. Visible-Light-Induced Bactericidal Activity of Titanium Dioxide Co-doped with Nitrogen and Silver

    PubMed Central

    Wu, Pinggui; Xie, Rongcai; Imlay, Kari; Shang, Jian-Ku

    2011-01-01

    Titanium dioxide nanoparticles co-doped with nitrogen and silver (Ag2O/TiON) were synthesized by the sol-gel process and found to be an effective visible light driven photocatalyst. The catalyst showed strong bactericidal activity against Escherichia coli (E. coli) under visible light irradiation (λ> 400 nm). In x-ray photoelectron spectroscopy and x-ray diffraction characterization of the samples, the as-added Ag species mainly exist as Ag2O. Spin trapping EPR study showed Ag addition greatly enhanced the production of hydroxyl radicals (•OH) under visible light irradiation. The results indicate that the Ag2O species trapped eCB− in the process of Ag2O/TiON photocatalytic reaction, thus inhibiting the recombination of eCB− and hVB+ in agreement with the stronger photocatalytic bactericidal activity of Ag2O/TiON. The killing mechanism of Ag2O/TiON under visible light irradiation is shown to be related to oxidative damages in the forms of cell wall thinning and cell disconfiguration. PMID:20726520

  6. Spectroscopic properties in Er3+/Yb3+ Co-doped fluorophosphate glass

    NASA Astrophysics Data System (ADS)

    Zheng, Tao; Qin, Jie-Ming; Jiang, Da-Yong; Lü, Jing-Wen; Xiao, Sheng-Chun

    2012-04-01

    Using the technique of high-temperature melting, a new Er3+/Yb3+ co-doped fluorophosphate glass was prepared. The absorption and fluorescence spectra were investigated in depth. The effect of Er3+ and Yb3+ concentration on the spectroscopic properties of the glass sample was also discussed. According to the Judd—Ofelt theory, the oscillator strength was computed. The lifetime of 4I13/2 level (τm) of Er3+ ions was 8.23 ms, and the full width at half maximum of the dominating emission peak was 68 nm at 1.53 μm. The large stimulated emission cross section of the Er3+ was calculated by the McCumber theory. The spectroscopic properties of Er3+ ion were compared with those in different glasses. The full width at half maximum and σe are larger than those of other glass hosts, indicating this studied glass may be a potentially useful candidate for high-gain erbium-doped fiber amplifier.

  7. A first-principles study of co-doping in lanthanum bromide

    NASA Astrophysics Data System (ADS)

    Aberg, Daniel; Sadigh, Babak; Schleife, Andre; Erhart, Paul

    2015-03-01

    It was recently shown that the energy resolution of Ce-doped LaBr3 scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that Sr dopants create and bind to Br vacancies, resulting in stable neutral complexes. The association with Sr causes the deep vacancy level to move toward the conduction band edge. This is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from the complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon. Optical properties of the Ce-Sr-vacancy triple complex are discussed and compared to experiment. Prepared by LLNL under Contract DE-AC52-07NA27344. Support from the National Nuclear Security Administration Office of Nonproliferation Research and Development (NA-22) is acknowledged.

  8. Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

    SciTech Connect

    Hsu, H. S. Chien, P. C.; Chang, Y. Y.; Sun, S. J.; Lee, C. H.

    2014-08-04

    This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3 nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c} = 3 nm and d{sub c} = 6 nm. Only remnant circular dichroism (CD) was observed from the d{sub c} = 3 nm sample but not when d{sub c} = 6 nm. In addition, the remnant CD peaks at 5.5 eV, which is comparable with the absorption peak associated with the C σ-σ* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

  9. Novel erbia-yttria co-doped zirconia fluorescent thermal history sensor

    NASA Astrophysics Data System (ADS)

    Copin, E. B.; Massol, X.; Amiel, S.; Sentenac, T.; Le Maoult, Y.; Lours, P.

    2017-01-01

    Thermochromic pigments are commonly used for off-line temperature mapping on components from systems operating at a temperature higher than 1073 K. However, their temperature resolution is often limited by the discrete number of color transitions they offer. This paper investigates the potential of erbia-yttria co-doped zirconia as a florescent thermal history sensor alternative to thermochromic pigments. Samples of yttria-stabilized zirconia powder (YSZ, 8.3 mol% YO1.5) doped with 1.5 mol% ErO1.5 and synthesized by a sol-gel route are calcined for 15 minutes under isothermal conditions between 1173 and 1423 K. The effects of temperature on their crystal structure and room temperature fluorescence properties are then studied. Results show a steady increase of the crystallinity of the powders with temperature, causing a significant and permanent increase of the emission intensity and fluorescence lifetime which could be used to determine temperature with a calculated theoretical resolution lower than 1 K for intensity. The intensity ratio obtained using a temperature insensitive YSZ:Eu3+ reference phosphor is proposed as a more robust parameter regarding experimental conditions for determining thermal history. Finally, the possibilities for integrating this fluorescent marker into sol-gel deposited coatings for future practical thermal history sensing applications is also discussed.

  10. Ag-Si Co-doped TiO2 photocatalyst synthesized via a nonaqueous method.

    PubMed

    Chen, Qifeng; Shi, Weimei; Xu, Yao; Wu, Dong; Sun, Yuhan

    2010-11-01

    Ag-Si/TiO2 photocatalysts were synthesized in a nonaqueous system at 140 degrees C, and then annealed at different temperatures. The obtained photocatalysts were characterized by XRD, TEM, BET, TG-DTA, XPS, as well as UV-vis DRS. The results showed that All Ag-Si/TiO2 held an anatase phase and high thermal stability and the phase transformation from anatase to rutile was retarded to about 900 degrees C. The Ag-Si/TiO2 particles were highly mono-dispersed and the particles size became smaller compared to TiO2. Additionally, UV-vis light absorption shifted to visible region after Ag doping. Si weaved into the matrix of TiO2, while Ag dispersed on the surface of TiO2 particles. The visible light photocatalytic activity was evaluated by Rhodamine B (RhB) degradation in an aqueous solution under visible light irradiation. It was found that the photccatalytic activities of the obtained Ag-Si/TiO2 samples were all higher than those of pure TiO2 and Ag/TiO2, reaching the maximum at the Ag and Si content of 0.5 mol% and 20.0 mol%, respectively. The enhanced visible photocatalytic activity may be attributed to the simultaneous effects of silver and silicon co-doping.

  11. Coalescence-driven magnetic order of the uncompensated antiferromagnetic Co doped ZnO

    NASA Astrophysics Data System (ADS)

    Ney, V.; Henne, B.; Lumetzberger, J.; Wilhelm, F.; Ollefs, K.; Rogalev, A.; Kovacs, A.; Kieschnick, M.; Ney, A.

    2016-12-01

    The evolution of the structural and magnetic properties of Co doped ZnO has been investigated over an unprecedented concentration range above the coalescence limit. ZnO films with Co concentrations from 20% to 60% of the cationic lattice have been grown by reactive magnetron sputtering. The wurtzite crystal structure was maintained even for these high dopant concentrations. By measuring the x-ray absorption at the near edge and the linear and circular dichroism of the films at the Zn and Co K edge, it could be shown that Co substitutes predominantly for Zn in the lattice. No indications of metallic Co have been found in the samples. At low Co concentrations, the films are paramagnetic, but with increasing Co content, the films become antiferromagnetically ordered with increasing order temperature. Uncompensated spins, coupled to the antiferromagnetic dopant configurations, lead to a vertical exchange-bias-like effect, which increases with increasing Co concentration. In parallel, the single-ion anisotropy is gradually lost.

  12. Interplay of dopant, defects and electronic structure in driving ferromagnetism in Co-doped oxides: TiO2, CeO2 and ZnO

    NASA Astrophysics Data System (ADS)

    Ali, Bakhtyar; Shah, Lubna R.; Ni, C.; Xiao, J. Q.; Shah, S. Ismat

    2009-11-01

    A comprehensive study of the defects and impurity (Co)-driven ferromagnetism is undertaken in the oxide semiconductors: TiO2, ZnO and CeO2. The effect of magnetic (Co2+) and non-magnetic (Cu2+) impurities in conjunction with defects, such as oxygen vacancies (Vo), have been thoroughly investigated. Analyses of the x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) data reveal the incorporation of cobalt in the lattice, with no signature of cobalt segregation. It is shown that oxygen vacancies are necessary for the ferromagnetic coupling in the Co-doped oxides mentioned above. The possible exchange mechanisms responsible for the ferromagnetism are discussed in light of the energy levels of dopants in the host oxides. In addition, Co and Cu co-doped TiO2 samples are studied in order to understand the role of point defects in establishing room temperature ferromagnetism. The parameters calculated from the bound magnetic polaron (BMP) and Jorgensen's optical electronegativity models offer a satisfactory explanation of the defect-driven ferromagnetism in the doped/co-doped samples.

  13. Fabrication of the C-N co-doped rod-like TiO{sub 2} photocatalyst with visible-light responsive photocatalytic activity

    SciTech Connect

    Li, Liang-Hai; Lu, Juan; Wang, Zuo-Shan; Yang, Lu; Zhou, Xiu-Feng; Han, Lu

    2012-06-15

    Highlights: ► Novel synthesis of C-N co-doped TiO{sub 2}. ► Self-assembly of C-N co-doped TiO{sub 2} nanorods by nanoparticles. ► Excellent photocatalytic efficiency. -- Abstract: The C-N co-doped TiO{sub 2} nanorods were synthesized by the vapor transport method of water molecules, and urea was used as the carbon and nitrogen source. The samples were characterized by X-ray diffraction and photoelectron spectroscopy analysis. The scanning electron microscope images showed that as-prepared TiO{sub 2} powders were nanorods, which were formed by the stacking of nanoparticles with a uniform size around 40 nm. The degradation of methylene blue with the prepared nanorods demonstrated the photocatalytic activities of TiO{sub 2} under visible light are improved by doping with C and N elements. The main reasons were discussed: doping with C and N elements could enhance the corresponding visible-light absorption of TiO{sub 2}. On the other hand, doping C and N could create more oxygen vacancies in the TiO{sub 2} crystals, which could capture the photogenerated electrons more effectively. Thus, more photogenerated holes could be left to improve the photocatalytic activity of TiO{sub 2}.

  14. Effect of Al substitution for Ga on the mechanical properties of directional solidified Fe-Ga alloys

    NASA Astrophysics Data System (ADS)

    Liu, Yangyang; Li, Jiheng; Gao, Xuexu

    2017-02-01

    Alloys of Fe82Ga18-xAlx (x=0, 4.5, 6, 9, 12, 13.5) were prepared by directional solidification technique and exhibited a <001> preferred orientation along the axis of alloy rods. The saturation magnetostriction value of the Fe82Ga13.5Al4.5 alloy was 247 ppm under no pre-stress. The tensile properties of alloys of Fe82Ga18-xAlx at room temperature were investigated. The results showed that tensile ductility of binary Fe-Ga alloy was significantly improved with Al addition. The fracture elongation of the Fe82Ga18 alloy was only 1.3%, while that of the Fe82Ga9Al9 alloy increased up to 16.5%. Addition of Al increased the strength of grain boundary and cleavage, resulting in the enhancement of tensile ductility of the Fe-Ga-Al alloys. Analysis of deformation microstructure showed that a great number of deformation twins formed in the Fe-Ga-Al alloys, which were thought to be the source of serrated yielding in the stress-strain curves. The effect of Al content in the Fe-Ga-Al alloys on tensile ductility was also studied by the analysis of deformation twins. It indicated that the joint effect of slip and twinning was beneficial to obtain the best ductility in the Fe82Ga9Al9 alloy.

  15. Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Jianfa; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing; Jin, Changqing

    2016-11-01

    We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ˜40 K. The maximum saturation moment of the this system reached to 2.17 μB /Mn , which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in "111" LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  16. Improving NaI:TI with non-luminescent cation co-doping (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Yang, Kan; Menge, Peter R.

    2016-09-01

    Thallium activated sodium iodide (NaI:Tl) is one of the most widely used gamma-ray scintillators. Commercially available NaI:Tl scintillators are typically characterized by a gamma-ray energy resolution of 6.5% at 662 keV and a scintillation decay time constant of 230 ns. Energy resolution, non-proportionality and scintillation decay time are improved when the crystal is co-doped with alkaline earth metals. The energy resolution of NaI:Tl+ is improved to 5.3% and the decay time is simultaneously reduced to 170 ns with Sr or Ca co-doping. The improvement in energy resolution, non-proportionality and decay time is likely due to the suppression of slow scintillation processes in NaI:Tl. We also demonstrated that Li+ can be substantially incorporated into the matrix of NaI under an optimized crystal growth process. The incorporation of Li+ introduces efficient neutron detection capability into an already successful gamma scintillator. Single crystals of Li co-doped NaI show similar gamma performance as standard NaI:Tl. Exceptional gamma-neutron pulse shape discrimination (PSD) has been demonstrated in all Li co-doped NaI crystals with up to 8% Li concentration. PSD Figure-of-Merits are up to 4.4 depending on Li content.

  17. (Al, Er) co-doped ZnO nanoparticles for photodegradation of rhodamine blue

    NASA Astrophysics Data System (ADS)

    Ghomri, R.; Shaikh, M. Nasiruzzaman; Ahmed, M. I.; Bououdina, M.; Ghers, M.

    2016-10-01

    Pure and co-doped (Al, Er) ZnO nanoparticles (NPs) have been synthesized by hydrothermal method using (Zn, Er and Al) nitrates. X-ray diffraction patterns reveal the formation of single phase of ZnO würtzite-type structure. The crystallite size for pure ZnO is in the order of 26.5 nm which decreases up to the range 14.2-22.0 nm after (Al, Er) co-doping. SEM micrographs show that the specimen is composed of regular spherical particles in the nanoscale regime with homogeneous size distribution and high tendency to agglomeration. FTIR spectra exhibit absorption lines located at wavenumbers corresponding to vibration modes between the constituent atoms. Raman spectra recorded under excitation ( λ exc = 632.8 nm) reveal peaks related to modes of transverse and longitudinal optical phonons of the würtzite ZnO structure. The energy band gap E g of ZnO:(Al, Er) NPs ranges in 3.264-3.251 eV. The photocatalytic activity of pure and co-doped (Al, Er) ZnO NPs was evaluated by the photodegradation of rhodamine blue under an irradiation of wavelength 554 nm. It is found that a photodegradation rate above 90 % could be achieved for a period of time of 40 min for pure ZnO and 120 min for (Al, Er) co-doped ZnO. A photodegradation mechanism is proposed.

  18. Influence of defects on electrical properties of electrodeposited co-doped ZnO nanocoatings

    NASA Astrophysics Data System (ADS)

    Simimol, A.; Anappara, Aji A.; Barshilia, Harish C.

    2017-01-01

    We present a systematic investigation of the electrical properties of undoped and Co-doped ZnO nanostructures at room temperature as an extensive study of the role of defects in ZnO. The ZnO nanostructures were fabricated by the electrodeposition method at low bath temperature (80 °C) and the Co concentration was varied from 0.01 to 0.2 mM. Electrical properties of the undoped and Co-doped ZnO nanostructures were studied in detail. The carrier concentration increases while the mobility reduces with increase in Co-concentration. The resistivity increases with an increase in Co-concentration and the reason is correlated with the defects in ZnO. In order to understand more details of the role of defects in the present I-V characteristic behavior of the Co-doped ZnO, high temperature vacuum annealing of ZnO sample was carried out. Electrical, optical and magnetic properties of the high temperature vacuum annealed ZnO were studied in detail. Photoluminescence spectroscopy (PL) results revealed more information of the defect levels which act as scattering centers for the carriers. Co-doping as well as annealing at high temperature in vacuum environment tunes the defects in ZnO and which influence the optical, magnetic and electrical behavior of the ZnO nanostructures.

  19. Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

    NASA Astrophysics Data System (ADS)

    Prudaev, I. A.; Romanov, I. S.; Kopyev, V. V.; Brudnyi, V. N.; Marmalyuk, A. A.; Kureshov, V. A.; Sabitov, D. R.; Mazalov, A. V.

    2016-11-01

    We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1-xN/GaN quantum wells with short-period InyGa1-yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an InyGa1-yN/GaN superlattice from the side of the n-region of a LED InxGa1-xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate.

  20. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  1. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  2. High field effects of GaN HEMTs.

    SciTech Connect

    Barker, Joy; Shul, Randy John

    2004-09-01

    This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with varying lengths and widths (8x2, 10x3, 12x3, 12x4, 15x5, and 16x4 {micro}m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 {Omega} environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5x10{sup 7} cm/s at 180 kV/cm and 3.1x10{sup 7} cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively. These experimental drift velocities mark the highest velocities measured in these materials to date and confirm

  3. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  4. Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode

    NASA Astrophysics Data System (ADS)

    Yang, Lin'an; He, Hanbing; Mao, Wei; Hao, Yue

    2011-10-01

    We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than ˜106 cm-2, which is consistent with the measurements of the state-of-the-art GaN RTDs. At around 300 GHz, the simulation for a RTD oscillator also demonstrates evident decreases of rf power and efficiency because of the electron trapping effect.

  5. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

    NASA Astrophysics Data System (ADS)

    Oh, Seung Kyu; Jang, Taehoon; Pouladi, Sara; Jo, Young Je; Ko, Hwa-Young; Ryou, Jae-Hyun; Kwak, Joon Seop

    2017-01-01

    To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer. The maximum drain current of the HFETs is 46.3 A, which is 240% higher than that of conventional AlGaN/GaN HFETs with the same die size. Furthermore, the drain current drop of the HFETs under high-bias operation is reduced from 14.07 to 8.09%, as compared to that of conventional HFETs.

  6. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  7. Improved visible light photocatalytic activity of fluorine and nitrogen co-doped TiO2 with tunable nanoparticle size

    NASA Astrophysics Data System (ADS)

    Cheng, Junyang; Chen, Jin; Lin, Wei; Liu, Yandong; Kong, Yan

    2015-03-01

    Fluorine and nitrogen co-doped TiO2 (F-N-TiO2) photocatalysts with enhanced photocatalytic activities were facilely synthesized by a simple one-step hydrothermal method using Ti(SO4)2 as an economical precursor, and hydrofluoric acid and ammonia as F and N source, respectively. The structure, morphology, and optical properties of produced nanoparticles were characterized by X-ray diffraction (XRD), N2 adsorption, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectra (FT-IR) methods. The synergistic effects of F and N doping were systematically examined by changing the molar ratio of F/N. Compared with the un-doped F or N mono-doped TiO2, the co-doped samples exhibited significantly improved photocatalytic performance due to their synergistic effects under visible light. It was shown that F dopant promoted the crystal growth and crystallinity of samples, while N dopant hindered it to some extent, which resulted in the tunable particle size of obtained F-N-TiO2 materials. The effects of F and N dopants on the enhanced photocatalytic activity of modified TiO2 materials were also discussed. The degradation rate of methylene blue (MB) was achieved at 97.31% after 5 h reaction under visible light over the optimized sample of FN3.5T. The materials also showed excellent stability according to the recycling tests of the photodegradation of MB.

  8. Sustained phase separation and spin glass in Co-doped KxFe2-ySe2 single crystals

    DOE PAGES

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; ...

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ≤ z ≤ 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemore » conducting phase.« less

  9. Phosphate modified N/Si co-doped rutile TiO2 nanorods for photoelectrochemical water oxidation

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaofan; Zhang, Bingyan; Luo, Yanping; Lv, Xiaowei; Shen, Yan

    2017-01-01

    Surface modification of TiO2 film provides possibilities to improve photoelectrochemical (PEC) activity. In this study, we report on phosphate modified N/Si co-doped TiO2 nanorods films (Pi-N/Si-TiO2 NRs) for PEC water oxidation. Compared to the pristine TiO2 NRs, the Pi-N/Si-TiO2 NRs photoanode shows a 4.65-fold enhanced photocurrent density (1.44 mA cm-2) under light illumination. This significant improvement can be attributed to the synergistic effect of phosphate modification and the N and Si co-dopants. In addition to the improvement of ultraviolet and visible light response by N and Si co-dopants, phosphate modification is mainly responsible for charge transfer at the interface of the photoanode/electrolyte.

  10. Lanthanum and zirconium co-doped ZnO nanocomposites: synthesis, characterization and study of photocatalytic activity.

    PubMed

    Moafi, Hadi Fallah; Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah

    2014-09-01

    Nanocomposits of zinc oxide co-doped with lanthanum and zirconium were prepared using the modified sol-gel method. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), diffuse reflectance spectroscopy (DRS), and BET surface area measurement. For comparison, the La and Zr mono doped ZnO have also been prepared under the same conditions. The XRD results revealed that all the materials showed a hexagonal wurtzite crystal structure. It was found that the particle size of La-Zr-doped ZnO is much smaller as compared to that of pure ZnO. The effect of operational parameters such as, doping concentration, catalyst loading, pH and initial concentration of methylene blue on the extent of degradation was investigated. The photocatalytic activity of the undoped ZnO, mono-doped and La-Zr-ZnO photocatalysts was evaluated by the photocatalytic degradation of methylene blue in aqueous solution. The presence of lanthanium and/or zirconium causes a red shift in the absorption band of ZnO. The results show that the photocatalytic activity of the La-Zr-ZnO photocatalyst is much higher than that of undoped and mono-doped ZnO, resulting from the La and Zr synergistic effect. The co-operation of the lanthanum and zirconium ion leads to the narrowing of the band gap and greatly improves the photocatalytic activity. The photocatalyst co-doped with lanthanum and zirconium 4 mol% shows the best photoactivity and photodecomposition efficiencies were improved by 92% under UV-Vis irradiation at the end of 30 min, compared with the pure and mono doped samples.

  11. Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field.

    PubMed

    Li, Guojian; Wang, Huimin; Wang, Qiang; Zhao, Yue; Wang, Zhen; Du, Jiaojiao; Ma, Yonghui

    2015-01-01

    The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

  12. Structural and superconducting properties of co-doped YBa2-xLaxCu3-xMxOz and La-free YBa2Cu3-xMxOz (M = Al, Zn) high-TC superconductors

    NASA Astrophysics Data System (ADS)

    Hao, S. J.; Jin, W. T.; Guo, C. Q.; Zhang, H.

    2012-05-01

    Two co-doped high-Tc superconducting systems, YBa2-xLaxCu3-xAlxOz and YBa2-xLaxCu3-xZnxOz (0 ⩽ x ⩽ 0.3), both of which have not been reported up to the present, were synthesized. The structural and superconducting properties have been investigated by X-ray diffraction (XRD) and DC magnetization measurement. Comparing the properties of these co-doped systems with single-doped systems YBa2Cu3-xAlxOz and YBa2Cu3-xZnxOz, it shows that in the Al-single-doped YBCO system, the depression of the critical temperature (Tc) with doping is stronger than that in (La, Al)-co-doped system, however, in the Zn-single-doped system, the Tc descends slower than that in (La, Zn)-co-doped system. This is possibly due to the opposite change of the distance between the Ba site and the CuO2 plane induced by the La doping. Besides, the La doping has another effect of improving the solid solubility compared with the Al- or Zn-single-doped system.

  13. High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Pal, Bappaditya; Giri, P. K.

    2010-10-01

    We report on the occurrence of high temperature ferromagnetism (FM) in ZnO nanoparticles (NPs) doped with Co-atoms. ZnO NPs of two different initial sizes are doped with 3% and 5% Co using ball milling and FM is studied at room temperature and above. X-ray diffraction and high-resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption studies show change in band structure and photoluminescence studies show green emission band at 520 nm indicating incorporation of Co-atoms and presence of oxygen vacancy defects, respectively in ZnO lattice. Micro-Raman studies of doped samples shows defect related additional bands at 547 and 574 cm-1. XRD and Raman spectra provide clear evidence for strain in the doped ZnO NPs. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear FM with saturation magnetization (Ms) and coercive field (Hc) of the order of 3-7 emu/g and 260 Oe, respectively. Temperature dependence of magnetization (M-T) measurement shows sharp ferromagnetic to paramagnetic transition with a high Curie temperature (Tc) of ˜800 K for 3% Co doped ZnO NPs. It is found that doping at 5% and higher concentration does not exhibit a proper magnetic transition. We attempt to fit the observed FM data with the bound magnetic polaron (BMP) model involving localized carriers and magnetic cations. However, calculated concentration of the BMPs is well below the typical percolation threshold in ZnO. We believe that observed high temperature FM is primarily mediated by defects in the strained NPs. ZnO NPs of lower initial size show enhanced FM that may be attributed to size dependent doping effect.

  14. The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells

    NASA Astrophysics Data System (ADS)

    Bae, Hyojung; Park, Jun-Beom; Fujii, Katsushi; Lee, Hyo-Jong; Lee, Sang-Hyun; Ryu, Sang-Wan; Lee, June Key; Ha, Jun-Seok

    2017-04-01

    In this study, the effects of the number of quantum well (QW) pairs on the photoelectrochemical (PEC) properties of InGaN/GaN multi-QW structures (MQWs) were investigated. MQW samples were grown using metal-organic chemical vapor deposition, and their structural characteristics were confirmed by X-ray diffraction measurements. The photoluminescence measurements revealed that the optical properties of MQWs may be related to the PEC properties. The cyclic voltammetry data revealed that the saturated photocurrent density increased with increasing number of QW pairs; the photocurrent density of MQW5 was twice that of an nGaN reference. However, in the chronoamperometry measurement of the photoanode stability, MQWs with 3 QWs displayed the highest photocurrent stability, although the saturated photocurrent density was highest for MQW5. This was also confirmed by field-emission scanning electron microscopy of the surface morphology after PEC measurements. The stability and photocurrent density may be attributed to the quality of crystallinity of the MQWs.

  15. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect

    Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.; Kravchenko, Ivan I

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  16. Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

    NASA Astrophysics Data System (ADS)

    Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

    1998-05-01

    InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

  17. First-principles study of magnetic properties in Co-doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Rong, Qing-Yan; Wang, Ling-Ling; Xiao, Wen-Zhi; Xu, Liang

    2015-01-01

    The electronic, structural, and magnetic properties of the perovskite Co-doped BiFeO3 have been investigated using density functional theory within the generalized gradient approximation plus Hubbard U correction (GGA+U). We discuss the changes that occur in the structural parameters, electronic structure, and magnetic properties of the Co-doped BiFeO3 under the consideration of the impact of the 3d electrons. The results show that a substitutional Co for Fe in BiFeO3 produces a magnetic moment of -1.0 μB and a half-metallic property emerges. The ferromagnetic (FM) coupling is more stable and still presents a half-metallic property when two Co atoms substitute for Fe atoms in BiFeO3.

  18. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  19. Enhanced electrical activation in In-implanted Ge by C co-doping

    DOE PAGES

    Feng, R.; Kremer, F.; Sprouster, D.; ...

    2015-11-22

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result ofmore » C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.« less

  20. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R.; Kremer, F.; Sprouster, D.; Mirzaei, S.; Decoster, S.; Glover, C.; Medling, S.; Pereira, C.; Russo, S.; Ridgway, M.

    2015-11-22

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  1. Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material.

    PubMed

    Zhang, Jiajia; He, Haiyan; Pan, Bicai

    2015-05-15

    An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe2 is a promising two-dimensional photovoltaic material.

  2. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification

    NASA Astrophysics Data System (ADS)

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-11-01

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions.

  3. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  4. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification

    PubMed Central

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-01-01

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions. PMID:27853275

  5. Structural, compositional and Raman studies of ZnS: Ce, Cu co-doped nanoparticles

    NASA Astrophysics Data System (ADS)

    Harish, G. S.; Reddy, P. Sreedhara

    2013-06-01

    In this present work, Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using chemical precipitation method. The prepared nanoparticles were characterized by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy dispersive analysis of X-rays (EDAX) and High Resolution Raman spectroscopic techniques. X-ray diffraction studies show that the diameter of the particles is 2-4 nm. Broadened XRD peaks confirmed the formation of nanoparticles with face centered cubic (FCC) structure. SEM attached with EDS gave the size, morphology and compositional analysis of as-prepared material. The Raman spectra of unplanted and Cu, Ce ions implanted samples of nano structured ZnS showed LO mode and TO mode. Compared with the Raman modes (276 and 351 cm-1) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co-doped ZnS nanoparticles are slightly shifted towards lower frequency side.

  6. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Pereira, L. M. C.; Glover, C. J.; Russo, S. P.

    2015-11-23

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  7. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification.

    PubMed

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-11-17

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions.

  8. C, N co-doped TiO2/TiC0.7N0.3 composite coatings prepared from TiC0.7N0.3 powder using ball milling followed by oxidation

    NASA Astrophysics Data System (ADS)

    Hao, Liang; Wang, Zhenwei; Zheng, Yaoqing; Li, Qianqian; Guan, Sujun; Zhao, Qian; Cheng, Lijun; Lu, Yun; Liu, Jizi

    2017-01-01

    Ball milling followed by heat oxidation was used to prepared C, N co-doped TiO2 coatings on the surfaces of Al2O3 balls from TiC0.7N0.3 powder. The as-prepared coatings were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrophotometer (UV-vis). The results show that continuous TiC0.7N0.3 coatings were formed after ball milling. C, N co-doped TiO2/TiC0.7N0.3 composite coatings were prepared after the direct oxidization of TiC0.7N0.3 coatings in the atmosphere. However, TiO2 was hardly formed in the surface layer of TiC0.7N0.3 coatings within a depth less than 10 nm during the heat oxidation of TiC0.7N0.3 coatings in carbon powder. Meanwhile, the photocatalytic activity evaluation of these coatings was conducted under the irradiation of UV and visible light. All the coatings showed photocatalytic activity in the degradation of MB no matter under the irradiation of UV or visible light. The C, N co-doped TiO2/TiC0.7N0.3 composite coatings showed the most excellent performance. The enhancement under visible light irradiation should attribute to the co-doping of carbon and nitrogen, which enhances the absorption of visible light. The improvement of photocatalytic activity under UV irradiation should attribute to the synergistic effect of C, N co-doping, the formation of rutile-anatase mixed phases and the TiO2/TiC0.7N0.3 composite microstructure.

  9. The effects of concentrated system on the electrical parameters of GaInP/GaAs solar cell

    NASA Astrophysics Data System (ADS)

    Kınacı, Barış

    2017-02-01

    III-V concentrator solar cells are suitable materials in order to reduce the cost of photovoltaic electricity. By using Fresnel lens in concentrating photovoltaic technology is an effective way to entirely use the sunlight. In the present study, the research on the efficiency analysis of the GaInP/GaAs concentrated solar cell structure with AlGaAs tunnel junction was performed. The electrical output parameters of this structure were determined by concentrated system with Fresnel lens. The current-voltage measurements of concentrated solar cell were carried out at room temperature under both dark and air mass 1.5 global radiations. The parameters of GaInP/GaAs concentrated solar cell at 1 Sun and at 32 Suns are compared. It is obtained that the integration of the concentrated system on the solar cell structure improves the device performance by ≈7.5%.

  10. Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

    NASA Astrophysics Data System (ADS)

    Valizadeh, Pouya; Alekseev, Egor; Pavlidis, Dimitris; Yun, Feng; Morkoç, Hadis

    2006-02-01

    The impact of high temperature rapid thermal annealing (RTA) on the mode of operation of AlGaN/GaN modulation doped field effect transistors (MODFETs) is reported. It is observed that annealing at high temperatures is capable of turning the normally depletion-mode (D-mode) characteristics of an AlGaN/GaN MODFET, towards that of an enhancement-mode (E-mode). This change is shown to be partly reversible through UV illumination. These results support the arguments on the extensive role of deep surface states on the operation of AlGaN/GaN MODFETs. According to this variation of characteristics, fabrication and characterization of close to E-mode AlGaN/GaN MODFETs are reported, using MBE grown material on sapphire. The devices demonstrate maximum extrinsic gate transconductance of 180 mS/mm. Unity current gain cutoff frequency ( fT) of 5 GHz and maximum oscillation frequency ( fmax) of 14 GHz were measured.

  11. Structural, optical and dielectric property of Co doped Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Swain, Smita Mohapatra, S. R. Sahoo, B. Singh, A. K.

    2014-04-24

    Multiferroic Bi{sub 2}Fe{sub 4}O{sub 9} and Co doped Bi{sub 2}Fe{sub 4}O{sub 9} are prepared by solid state route reaction method using bismuth oxide(Bi{sub 2}O{sub 3}), iron oxide(Fe{sub 2}O{sub 3}) and cobalt oxide (Co{sub 3}O{sub 4}). Their structural optical and dielectric properties are studied and compared. X-ray diffraction (XRD) results confirm that there is no change in crystal structure due to Co doping. From dielectric constant measurement we conclude that dielectric constant increases due to Co doping. UV-Visible plot shows due to Co doping bang gap energy increases.

  12. Catalytic wet air oxidation of phenol over Co-doped Fe3O4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Song, Xu Chun; Zheng, Yi Fan; Yin, Hao Yong

    2013-08-01

    The Fe3O4 nanoparticles doped with cobalt ions have been successfully synthesized by the co-precipitation process. The X-ray diffraction, inductively coupled plasma, scanning electron microscopy, and transmission electron microscopy were used to characterize the as-prepared nanoparticles. The results show that the phase structure of the nanoparticles is spinel structure of pure Fe3O4 with the particle size ranging from 40 to 50 nm. The Co-doping concentration can be controlled by changing the atomic ratio of the stock materials. The catalytic activity of the Co-doped Fe3O4 was further investigated by decomposing the phenol in liquid phase. The results show that cobalt ions doping can improve the catalytic efficiency of Fe3O4 nanoparticles in phenol degradation with catalytic reaction fitting the first-order kinetics. According to the estimated reaction rate of Co-doped Fe3O4 nanoparticles at different temperatures, the activation energy was calculated to be 45.63 kJ/mol.

  13. Luminescence Properties of Sm3+/Eu3+ Co-Doped ZnO Quantum Dots.

    PubMed

    Liu, Fengyi; Li, Hong; Hu, Yajing; Na, Jin; Mou, Yun; Yang, Kun; Ye, Zuhu; Li, Mingyue; Xie, Ya-Hong

    2016-04-01

    In order to improve luminescence properties of semiconductor ZnO quantum dots (QDs), Sm3+/Eu3+ co-doped ZnO QDs have been controllably synthesized by sol-gel method in this paper. ZnO QDs have a spherical shape with mean diameter at about 5-6 nm, which was characterized by high-resolution transmission electron microscopy (HRTEM). ZnO QDs have hexagonal wurtzite structure with parts of Sm3+ and Eu3+ incorporated into the lattice, which was demonstrated by X-ray Diffraction (XRD). Luminescence properties at room temperature (RT) of different amount of Sm3+ and 2 mol% Eu3+ doped ZnO QDs were examined in-depth by optical spectra. In contrast to the Pr3+/Eu3+ co-doped fluorescent performance researched in our previous study, the photoluminescence (PL) spectra indicates the unique luminescence properties of Sm3+/Eu3+ co-doped ZnO QDs. In addition, fluorescence lifetimes were obtained to illustrate the luminous mechanism.

  14. Observation of low field microwave absorption in co-doped ZnO system

    NASA Astrophysics Data System (ADS)

    Mahule, Tebogo S.; Srinivasu, Vijaya V.; Das, Jayashree

    2016-10-01

    Room temperature low field microwave absorption (LFMA) in magnetic materials find application in microwave absorbers and low field sensors. However not all the magnetic materials show LFMA and the phenomenon is not fully understood. We report on the observation of low field microwave absorption (LFMA) or the non-resonant microwave absorption (NRMA) in the transition metal (TM) co-doped ZnO samples of the composition Zn1-x(TM:TM)xO synthesized by solid state reaction technique. LFMA peaks and hysteresis matches very well with that of the magnetization hysteresis loop and the anisotropy fields at room temperature similar to the reports in the literature for other magnetic systems. However we show through our careful experiments that such a correlation between LFMA and the magnetization does not survive at low temperatures and particularly at 10 K the LFMA hysteresis collapses in our TM co-doped ZnO system; whereas the magnetization hysteresis loop becomes very big and anisotropy field becomes bigger in the range of kOe. We interpret the LFMA as field dependent surface impedance or eddy current losses, in terms of a possible role of anomalous hall resistivity that follows magnetization and the ordinary hall resistivity that only follows the applied field. We then argue that LFMA accordingly follows magnetization or applied field when AHE or OHE dominates respectively. Also we confirm the absence of LFMA signals in the rare earth co-doped ZnO system.

  15. Visible upconversion in Er3+/Yb3+ co-doped LaAlO3 phosphors

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Rai, V. K.; Singh, N.; Pathak, M. S.; Rathaiah, M.; Venkatramu, V.; Patel, Rahul V.; Singh, Pramod K.; Dhoble, S. J.

    2017-01-01

    The Er3+ doped and Er3+/Yb3+ co-doped LaAlO3 phosphors have been synthesized by the combustion method and characterized their structural, morphological, elemental, vibrational and optical properties. The optical absorption and upconversion properties of the synthesized phosphors have been studied. Upon co-doping Yb3+ ions into Er3+:LaAlO3, the blue, green and red upconversion emissions of Er3+ ions have been enhanced about 20, 54 and 22 times, under 978 nm laser excitation. The observed upconversion emissions could be due to excited state absorption in Er3+:LaAlO3, whereas energy transfer is dominant mechanism in Er3+/Yb3+:LaAlO3 phosphors. The tuning in the color emitted from the synthesized phosphors towards the green region has been found due to incorporation of the Yb3+ ions. With increase in the pump power, the color emitted from the co-doped phosphor is not tuned significantly, showing its applicability in making the green display devices.

  16. Physical mechanism of resistance switching in the co-doped RRAM

    NASA Astrophysics Data System (ADS)

    Yang, Jin; Dai, Yuehua; Lu, Shibin; Jiang, Xianwei; Wang, Feifei; Chen, Junning

    2017-01-01

    The physical mechanism of the resistance switching for RRAM with co-doped defects (Ag and oxygen vacancy) is studied based on the first principle calculations and the simulation tool VASP. The interaction energy, formation energy and density of states of Ag and oxygen vacancy defect (VO) are calculated. The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or VO defect and the impurity energy levels in the band gap are contributed by Ag and VO defects. The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions, which means that it is Ag but VO plays a role of conductive paths. For the formation mechanism, the modified electron affinity and the partial charge density difference are calculated. The results show that the ability of electron donors of Ag is stronger than VO In conclusion, the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag. Project supported by the National Natural Science Foundation of China (No. 61376106), the Research Foundation of Education Bureau of Anhui Province, China (Nos. KJ2015A276, KJ2016A574, KJ2014A208), and the Special Foundation for Young Scientists of Hefei Normal University (No. 2015rcjj02).

  17. HPHT synthesis of N-H co-doped diamond single crystals

    NASA Astrophysics Data System (ADS)

    Fang, Chao; Jia, Xiaopeng; Chen, Ning; Li, Yadong; Guo, Longsuo; Chen, Liangchao; Ma, Hong-an; Liu, Xiaobing

    2016-02-01

    In this paper, a series of nitrogen and hydrogen elements (N-H) co-doped diamond single crystals were synthesized in the NiMnCo-C system with melamine (C3N6H6) additive by temperature gradient growth (TGG) method under high-pressure and high-temperature (HPHT). High nitrogen and hydrogen growth environment obviously reduces the growth rate of the diamond. The synthetic diamond crystals are octahedral shape with a green or dark green color. This results indicate that the morphology of the synthetic N-H co-doped gem-diamond can be well-controlled by TGG method. Fourier transform infrared spectroscopy (FTIR) indicate that high-quality diamond single crystals with nitrogen concentrations up to 2100 ppm have been successfully synthesized and the hydrogen related peaks at 2850 cm-1 (sp3-CH3) and 2920 cm-1 (sp3-CH2-) are found in these synthetic diamond. Meanwhile, with the increasing of C-centers the nitrogen atoms aggregate and form into A-centers in these synthetic diamonds. This is the highest quality of N-H co-doped gem-diamond single crystal synthesized in high nitrogen and high hydrogen growth environment reported so far.

  18. Synthesis and characterization of Ce, Cu co-doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Harish, G. S.; Sreedhara Reddy, P.

    2015-09-01

    Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using a chemical co-precipitation method. The prepared nanoparticles were characterized by X- ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) and high resolution Raman spectroscopic techniques. Transmission electron microscopy (TEM) and X-ray diffraction studies showed that the diameter of the particles was around 2-3 nm. Broadened XRD peaks revealed the formation of nanoparticles with a face centered cubic (fcc) structure. DRS studies confirmed that the band gap increased with an increase in the dopant concentration. The Raman spectra of undoped and Ce, Cu ions co-doped ZnS nanoparticles showed longitudinal optical mode and transverse optical mode. Compared with the Raman modes (276 and 351 cm-1) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co- doped ZnS nanoparticles were slightly shifted towards lower frequency. PL spectra of the samples showed remarkable enhancement in the intensity upon doping.

  19. Enhanced visible-light activity of F-N co-doped TiO2 nanocrystals via nonmetal impurity, Ti3+ ions and oxygen vacancies

    NASA Astrophysics Data System (ADS)

    Yang, Guidong; Wang, Ting; Yang, Bolun; Yan, Zifeng; Ding, Shujiang; Xiao, Tiancun

    2013-12-01

    A visible light active F-N co-doped TiO2 photocatalysts with varying molar ratio of TiO2/NH4F were successfully prepared using an effective yet simple ethanol-water solvothermal method. The photocatalytic activities of the prepared catalysts were tested for the degradation of methylene blue (MB) under visible light irradiation. Superior photocatalytic activity relative to that of undoped TiO2 was observed on the F-N co-doped catalyst with TiO2:NH4F molar ratio of 1.0. Based on the characterization results including FT-IR, XRD, Raman analysis, UV-vis DRS, XPS and ESR, the F and N dopants were effectively incorporated into the anatase TiO2 lattice, and resulted in a decrease in the energy gap, especially for the TONF-2 sample, which shows two optical absorption edge at 2.32 eV and 2.99 eV, respectively. The ESR data showed that the presence of fluorine and nitrogen in the lattice induces the formation of reduced Ti3+ centers and oxygen vacancies. In addition, the surface O2rad - radicals were also detected by ESR analysis, which together with rad OH radicals are responsible for the MB solution decoloration under visible light. According to the experimental results, it is believed that the enhanced visible light activity arises from the synergistic effect of F-N co-doping, the presence of Ti3+ centers and oxygen vacancies, and thus possible mechanism for both visible light absorption and charge separation were proposed.

  20. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  1. Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Tang, C. G.; Chen, Y. H.; Liu, Y.; Wang, Z. G.

    2009-09-01

    We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

  2. Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas.

    PubMed

    Tang, C G; Chen, Y H; Liu, Y; Wang, Z G

    2009-09-16

    We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

  3. Co-doping induced coexistence of superconductivity and ferromagnetism in Bi3.9Co0.1O4S3

    NASA Astrophysics Data System (ADS)

    Yu, Chuan; Feng, Zhenjie; Yin, Xunqing; Li, Qing; Kang, Baojuan; Lu, Bo; Jing, Chao; Cao, Shixun; Zhang, Jincang

    2016-09-01

    The effects of Co doping on the physical properties of the Bi4O4S3 system was studied. We discovered that stable Bi3.9Co0.1O4S3 compound exhibits both long-range ferromagnetism and enhanced superconductivity with thermodynamic evidences for Tc ∼ 5.5 K. We found that there is an anomalous feature which represents superconducting transition in the hysteretic M-vs.-H loops for Bi3.9Co0.1O4S3 at T = 3 K.

  4. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect

    Aleshkin, V. Ya.; Afonenko, A. A.; Dikareva, N. V.; Dubinov, A. A. Kudryavtsev, K. E.; Morozov, S. V.; Nekorkin, S. M.

    2013-11-15

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  5. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    SciTech Connect

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-10-26

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  6. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  7. Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

    PubMed Central

    2012-01-01

    In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. PMID:22937963

  8. Effects of 30 Mev Electron Irradiation on InGaAsP LEDs (Light Emitting Diodes) and InGaAs Photodiodes.

    DTIC Science & Technology

    1986-06-01

    Radiation Ref. Aukerman , 1966 LED GaAs 2 Meu Electrons 12 Millea, McColl Stanley 1970 LED GaAsGaP 2.0 - 2.5 Mey 13 GaAsP Electrons Mitchell 1977...Effects of Nuclear Weapons, United States Department of Defense, 1977. 12. Aukerman , L.W., Millea, M.F., McColl, M., Effects of Radiation Damage On

  9. Synthesis and properties of ZnTe and Eu3+ ion co-doped glass nanocomposites

    NASA Astrophysics Data System (ADS)

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-10-01

    In this study, ZnTe (II-VI) semiconductor and Eu+3-ion co-doped borosilicate glass has been prepared in the SiO2-K2O-CaO-BaO-B2O3 glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10-6/K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λcut-off) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the 5D0 → 7F2 transition. An intense 394 nm excitation band corresponding to the 7F0 → 5L6 transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu3+ ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. 5D1 → 7F0 transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu3+ ions in the low phonon energy ZnTe crystal sites. The micro hardness of the precursor glass and glass nanocomposites was evaluated; base glass shows hardness of 6.7 GPa and hardness of heat

  10. Understanding the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals

    SciTech Connect

    Adhikari, Rajesh; Choi, Jinhyuk; Narro-García, R.; De la Rosa, E.; Sekino, Tohru; Lee, Soo Wohn

    2014-08-15

    In this paper we report the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals synthesized via microwave assisted sol–gel processing route. Structural, morphological and upconversion luminescence properties were investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), UV–vis diffuse reflectance spectroscopy (UV–vis DRS) and Upconversion Photoluminescence spectra analysis. Results revealed that the oval shaped BaMoO{sub 4} nanocrystals ranging in size from 40 to 60 nm having tetragonal scheelite crystal structure were obtained by sol–gel route. The infrared to visible upconversion luminescence has been investigated in Er{sup 3+}/Yb{sup 3+} co-doped in BaMoO{sub 4}with different Yb{sup 3+} concentrations. Intense green upconversion emissions around 528, 550 nm, and red emission at 657 nm corresponding to the {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} transitions, respectively to the {sup 4}I{sub 15/2} ground state were observed when excited by CW laser radiation at 980 nm. The green emissions were greatly enhanced after the addition of sensitizer (Yb{sup 3+} ions). The effect of Yb{sup 3+} on the upconversion luminescence intensity was analyzed and explained in terms of the energy transfer process based. The reported work establishes the understanding of molybdates as an alternative host material for upconversion luminescence. - Graphical abstract: Infrared to visible upconversion luminescence of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. - Highlights: • Nanocrystals were synthesized by microwave assisted sol–gel processing route. • Strong green emissions were observed in Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. • Provides an insight on Upconversion luminescence properties of oxides host materials.

  11. Effect of GaN template layer strain on the growth of InxGa1-xN/GaN MQW light emitting diodes

    SciTech Connect

    Johnson, M.C.; Bourret-Courchesne, E.D.; Wu, J.; Liliental-Weber, Z.; Zakharov, D.N.; Jorgenson, R.J.; Ng, T.B.; McCready, D.E.; Williams, J.R.

    2004-01-15

    GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5{micro}m and 15{micro}m GaN template layers. It was found that the electroluminescence emission of the 15{micro}m device was red-shifted by approximately 132meV. Triple-axis X-Ray Diffraction and Cross-Sectional Transmission Electron Microscopy show that the 15{micro}m templay layer device was virtually unstrained while the 5{micro}m layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry depth profiles show that the 15{micro}m template layer device had an average indium concentration of 11% higher than that of the 5{micro}m template layer device even though the structures were deposited during the same growth run. It was also found that the 15{micro}m layer device had a higher growth rate than the 5{micro}m template layer device. This difference in indium concentration and growth rate was due to changes in thermodynamic limitations caused by strain differences in the template layers.

  12. Effect of the Yb3+ Concentration in Up-Conversion and Electrical Properties of Ho3+/Yb3+ Co-doped (0.94Na0.5Bi0.5TiO3-0.06BaTiO3) Ceramics

    NASA Astrophysics Data System (ADS)

    Liu, Qian; Li, Yanxia; Li, Jun; Chai, Xiaona; Zhao, Haifeng; Wang, Xusheng; Yao, Xi

    2016-07-01

    Ho3+/Yb3+ co-doped 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 (NBT-BT:Ho3+/Yb3+) ceramics were synthesized by solid-state reaction and characterized by x-ray diffraction (XRD), luminescent, dielectric, ferroelectric and piezoelectric measurements. The XRD diffraction data showed that all the ceramics were single phase with a perovskite structure. Bright green up-conversion (UC) emission bands (545 nm) and weak red UC emission bands (660 nm) corresponded to the transitions from (5F4, 5S2) → 5I8 and 4I5 → 5I8, respectively. Furthermore, optimized UC emission intensity was observed in the NBT-BT:0.005Ho3+/0.03Yb3+ samples. The thermal behavior of UC emission in the ceramics was also investigated and the maximum sensitivity based on fluorescence intensity ratio (FIR) technology was approximately 0.0042 K-1 at 100 K. Moreover, relatively good dielectric properties ( ɛ = 4475) and ferroelectric properties ( P r = 32 μ/cm2 and E c = 37 kV) were obtained in NBT-BT:0.005Ho3+/0.005Yb3+. As a multi-functional material, NBT-BT:Ho3+/Yb3+ ceramics may be useful in electro-optical devices.

  13. Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

    NASA Astrophysics Data System (ADS)

    Weber, W.; Golub, L. E.; Danilov, S. N.; Karch, J.; Reitmaier, C.; Wittmann, B.; Bel'Kov, V. V.; Ivchenko, E. L.; Kvon, Z. D.; Vinh, N. Q.; van der Meer, A. F. G.; Murdin, B.; Ganichev, S. D.

    2008-06-01

    Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.

  14. Control of sidegating effects in AlGaAs/GaAs heterostructure field-effect transistors by modification of GaAs wafer surfaces

    NASA Astrophysics Data System (ADS)

    Gray, M. L.; Reynolds, C. L.; Parsey, J. M., Jr.

    1990-07-01

    Sidegating characteristics of AlGaAs/GaAs heterostructure field-effect transistors, fabricated on molecular-beam epitaxially grown layers, were investigated with emphasis on the material properties. A systematic analyses of the epitaxial layers concluded with the identification of the substrate-superlattice-buffer-layer interface as the predominant cause of the sidegating effect. Remnant carbon contamination on the GaAs surface was found to produce a p-type, conducting interfacial region. Controlled oxidation of the carbon on the wafers was accomplished using ultraviolet radiation. This oxide was desorbed in situ before epitaxial growth. Secondary-ion-mass spectroscopy was employed to estimate the carbon concentration at the substrate-epitaxial-layer interface for standard cleaned and ultraviolet-ozone-treated wafers. The carbon concentration of the interfacial region decreased by two orders of magnitude for the wafers exposed to the ultraviolet radiation. Hall-effect measurements of standard cleaned and ultraviolet-ozone-treated heterostructure wafers, prepared with various buffer layer thicknesses, demonstrated the dominant influence of the interfacial p-type region on the electronic properties of the material. A comparison of sidegating characteristics for devices fabricated on the two types of wafers is presented and discussed. A dramatic improvement in sidegating was observed for the wafers subjected to the ultraviolet-ozone cleaning procedure.

  15. Proton damage effects on GaAs/GaAlAs vertical cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Le Metayer, P.; Gilard, O.; Germanicus, R.; Campillo, D.; Ledu, F.; Cazes, J.; Falo, W.; Chatry, C.

    2003-12-01

    A series of proton irradiations of GaAs/GaAlAs vertical cavity surface emitting lasers (VCSELs) has been carried out for the purpose of assessing the suitability of these devices for space applications. The irradiations were performed on biased and unbiased devices at energies of 30, 40, 50, and 60 MeV. Both current versus voltage (I-V) and optical power versus current (P-I) characteristics were measured before and after each irradiation phase. A simple circuit equivalent model for the VCSEL has been developed to analyze proton damage effects through the extraction of electrical parameters. The current threshold of VCSEL is shown to be the only important parameter modified by a high fluence (up to 1012 protons/cm2) irradiation. Changes in the threshold current show radiation generated recombination centers to be the main cause of degradation. Due to carrier injection annealing related effects, we observed that unbiased devices show the greatest relative threshold increase (between 15% and 20% at 1013 protons/cm2). The threshold current damage factor was also calculated. The analysis of the I-V characteristics shows that in the range of low fluences (1010-1012 protons/cm2) radiation induced ordering effects may compete with the usual radiation degradation that we observed at higher fluences. Consequently, the nonionizing energy loss approach, which is extensively used to predict the degradation of electronic devices under a full spectrum of energetic particles, is deemed to be not yet applicable for prediction of end-of-life performances of VCSELs.

  16. Europium and potassium co-doped strontium metaborate single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    Głowacki, Michał; Solarz, Piotr; Ryba-Romanowski, Witold; Martín, Inocencio R.; Diduszko, Ryszard; Berkowski, Marek

    2017-01-01

    Strontium metaborate (SrB2O4) is a suitable material for use as a matrix for luminescent dopant ions. Similarity of ionic radii of strontium and divalent europium makes it an excellent host for Eu dopant. This paper reports on the Czochralski growth and spectroscopic study of SrB2O4 single crystals doped with europium and co-doped with europium and potassium. Based on recorded luminescence spectra it was found that both Eu3+ and Eu2+ ions occur in this host. Trivalent europium ions give rise to a narrow-band long-lived red luminescence that is not affected by incorporation of potassium ions. Divalent europium ions emit a UV-blue luminescence, consisting of a large spectral band centered at ca 430 nm. In the absence of potassium ions the decay of this luminescence deviates slightly from a single exponential time dependence with a mean lifetime value of 2.0 ns. In potassium-co-doped sample a strong deviation from a single exponential decay was observed for longer stages of decay, beginning at ca 2.5 ns. This phenomenon was attributed to dissimilarity of relaxation rates of a fraction of europium ions distributed in different lattice sites that are distorted by the presence of big potassium ions. By co-doping the host with alkali ions one can influence the oxidation state of europium ions thereby enhancing the emission of trivalent europium ions. It was concluded that the material under study is a promising phosphor for visible light emission applications.

  17. Preparation and properties of sliver and nitrogen co-doped TiO{sub 2} photocatalyst

    SciTech Connect

    Zhang, Ying; Zhang, Jin; Zhu, Zhongqi; Yan, Ningning; Liu, Qingju

    2013-11-15

    Graphical abstract: - Highlights: • The silver and nitrogen co-doped TiO{sub 2} photocatalysts were prepared and characterized. • The light absorption threshold wavelength of Ag–N–TiO{sub 2} is red-shifted to visible light. • The recombination of the photo-generated electrons and holes of Ag–N–TiO{sub 2} is inhibited. • The photocatalytic activity of Ag–N–TiO{sub 2} is remarkable improved. - Abstract: TiO{sub 2} photocatalysts co-doped with different content of Ag and N were prepared by sol–gel method combined with microwave chemical method. The samples were analyzed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), ultraviolet–visible diffuse reflectance spectrum (UV–vis) and photo-luminescence emission spectrum (PL). The photocatalytic activity was investigated by photocatalytic degradation of methylene blue (MB) under irradiation of fluorescent lamp. The results indicate that Ag and N co-doping can restrain the increase of grain size, broaden the absorption spectrum to visible light region, and inhibit the recombination of the photo-generated electron–hole pairs. Moreover, the photocatalytic activity of Ag–N–TiO{sub 2} in MB degradation is remarkable improved. The degradation rate of the sample with Ag:TiO{sub 2} = 0.05 at%, N:TiO{sub 2} = 18.50 wt% in 5 h is 93.44%, which is much higher than that of Degussa P25 (39.40%)

  18. Understanding ferromagnetism in Co-doped Ti O2 anatase from first principles

    NASA Astrophysics Data System (ADS)

    Janisch, Rebecca; Spaldin, Nicola A.

    2006-01-01

    We present a first-principles computational study of the nature and origin of ferromagnetism in Co-doped TiO2 . We calculate the magnetic ordering and electronic properties as a function of the concentration and distribution of Co dopants and oxygen vacancies. We find that Co atoms prefer to substitute on neighboring sites of the Ti lattice, and show, using the well-established Goodenough-Kanamori-Anderson rules, that this leads to a ferromagnetic superexchange. We propose other semiconductor hosts in which the superexchange mechanism should lead to ferromagnetic coupling between the magnetic moments of neighboring transition metal dopants.

  19. Superconductivity in fluorine and yttrium co-doped SmFeAsO

    NASA Astrophysics Data System (ADS)

    Lai, K. T.; Kwong, F. L.; Ng, Dickon H. L.

    2012-05-01

    Polycrystalline fluorine and yttrium co-doped SmFeAsO samples are synthesized by solid state sintering and their physical properties are studied. The lattice parameters of the Sm1-yYyFeAsO0.8F0.2 samples decrease with the increasing y due to the smaller Y ions and the stiffness of the Y-O bond. The maximum critical temperature Tc of the samples is at y = 0.05. This may be due to the fact that the strong interaction between Sm and Fe of the Fe-As bond is being re-disturbed by the doped Y ions.

  20. Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

    NASA Astrophysics Data System (ADS)

    Duan, Qianqian; Qin, Feng; Zhao, Hua; Zhang, Zhiguo; Cao, Wenwu

    2013-12-01

    The absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass was quantitatively measured by an integrating sphere detection system, which is independent of the excitation power. As the Yb3+ concentration increases, the near infrared quantum efficiency exhibited an exponential growth with an upper limit of 13.5%, but the visible light efficiency was reduced rapidly. As a result, the total quantum efficiency monotonically decreases rather than increases as theory predicted. In fact, the absolute quantum efficiency was far less than the theoretical value due to the low radiative efficiency of Tb3+ (<61%) and significant cross-relaxation nonradiative loss between Yb3+ ions.

  1. Ferromagnetism in Co-doped (La,Sr)TiO3

    SciTech Connect

    Fix, T.; Liberati, M.; Aubriet, H.; Sahonta, S.-L.; Bali, R.; Becker, C.; Ruch, D.; MacManus-Driscoll, J.L.; Arenholz, E.; Blamire, M.G.

    2009-04-21

    The origin of ferromagnetism in Co-doped (La,Sr)TiO{sub 3} epitaxial thin films is discussed. While the as-grown samples are not ferromagnetic at room temperature or at 10 K, ferromagnetism at room temperature appears after annealing the films in reducing conditions and disappears after annealing in oxidizing conditions. Magnetic measurements, x-ray absorption spectroscopy, x-ray photoemission spectroscopy and transmission electron microscopy experiments indicate that within the resolution of the instruments the activation of the ferromagnetism is not due to the presence of pure Co.

  2. Co-doping Strategy for Developing Perovskite Oxides as Highly Efficient Electrocatalysts for Oxygen Evolution Reaction.

    PubMed

    Xu, Xiaomin; Su, Chao; Zhou, Wei; Zhu, Yinlong; Chen, Yubo; Shao, Zongping

    2016-02-01

    A synergistic co-doping strategy is proposed to identify a series of BaCo0.9-x Fe x Sn0.1O3-δ perovskites with tunable electrocatalytic activity for the oxygen evolution reaction (OER). Simply through tailoring the relative concentrations of less OER-active tin and iron dopants, a cubic perovskite structure (BaCo0.7Fe0.2Sn0.1O3-δ) is stabilized, showing intrinsic OER activity >1 order of magnitude larger than IrO2 and a Tafel slope of 69 mV dec(-1).

  3. Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

  4. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  5. Radial Stark Effect in (In,Ga)N Nanowires.

    PubMed

    Lähnemann, Jonas; Corfdir, Pierre; Feix, Felix; Kamimura, Jumpei; Flissikowski, Timur; Grahn, Holger T; Geelhaar, Lutz; Brandt, Oliver

    2016-02-10

    We study the luminescence of unintentionally doped and Si-doped InxGa1-xN nanowires with a low In content (x < 0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by X-ray diffractometry and energy dispersive X-ray spectroscopy. This discrepancy arises from the pinning of the Fermi level at the sidewalls of the nanowires, which gives rise to strong radial built-in electric fields. The combination of the built-in electric fields with the compositional fluctuations inherent to (In,Ga)N alloys induces a competition between spatially direct and indirect recombination channels. At elevated temperatures, electrons at the core of the nanowire recombine with holes close to the surface, and the emission from unintentionally doped nanowires exhibits a Stark shift of several hundreds of meV. The competition between spatially direct and indirect transitions is analyzed as a function of temperature for samples with various Si concentrations. We propose that the radial Stark effect is responsible for the broadband absorption of (In,Ga)N nanowires across the entire visible range, which makes these nanostructures a promising platform for solar energy applications.

  6. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  7. Substrate co-doping modulates electronic metal-support interactions and significantly enhances single-atom catalysis.

    PubMed

    Shi, J L; Wu, J H; Zhao, X J; Xue, X L; Gao, Y F; Guo, Z X; Li, S F

    2016-11-24

    Transitional metal nanoparticles or atoms deposited on appropriate substrates can lead to highly economical, efficient, and selective catalysis. One of the greatest challenges is to control the electronic metal-support interactions (EMSI) between the supported metal atoms and the substrate so as to optimize their catalytic performance. Here, from first-principles calculations, we show that an otherwise inactive Pd single adatom on TiO2(110) can be tuned into a highly effective catalyst, e.g. for O2 adsorption and CO oxidation, by purposefully selected metal-nonmetal co-dopant pairs in the substrate. Such an effect is proved here to result unambiguously from a significantly enhanced EMSI. A nearly linear correlation is noted between the strength of the EMSI and the activation of the adsorbed O2 molecule, as well as the energy barrier for CO oxidation. Particularly, the enhanced EMSI shifts the frontier orbital of the deposited Pd atom upward and largely enhances the hybridization and charge transfer between the O2 molecule and the Pd atom. Upon co-doping, the activation barrier for CO oxidation on the Pd monomer is also reduced to a level comparable to that on the Pd dimer which was experimentally reported to be highly efficient for CO oxidation. The present findings provide new insights into the understanding of the EMSI in heterogeneous catalysis and can open new avenues to design and fabricate cost-effective single-atom-sized and/or nanometer-sized catalysts.

  8. 3D coral-like nitrogen-sulfur co-doped carbon-sulfur composite for high performance lithium-sulfur batteries

    PubMed Central

    Wu, Feng; Li, Jian; Tian, Yafen; Su, Yuefeng; Wang, Jing; Yang, Wen; Li, Ning; Chen, Shi; Bao, Liying

    2015-01-01

    3D coral-like, nitrogen and sulfur co-doped mesoporous carbon has been synthesized by a facile hydrothermal-nanocasting method to house sulfur for Li–S batteries. The primary doped species (pyridinic-N, pyrrolic-N, thiophenic-S and sulfonic-S) enable this carbon matrix to suppress the diffusion of polysulfides, while the interconnected mesoporous carbon network is favourable for rapid transport of both electrons and lithium ions. Based on the synergistic effect of N, S co-doping and the mesoporous conductive pathway, the as-fabricated C/S cathodes yield excellent cycling stability at a current rate of 4 C (1 C = 1675 mA g−1) with only 0.085% capacity decay per cycle for over 250 cycles and ultra-high rate capability (693 mAh g−1 at 10 C rate). These capabilities have rarely been reported before for Li-S batteries. PMID:26288961

  9. Hierarchical Cobalt Hydroxide and B/N Co-Doped Graphene Nanohybrids Derived from Metal-Organic Frameworks for High Energy Density Asymmetric Supercapacitors

    NASA Astrophysics Data System (ADS)

    Tabassum, Hassina; Mahmood, Asif; Wang, Qingfei; Xia, Wei; Liang, Zibin; Qiu, Bin; Zhao, Ruo; Zou, Ruqiang

    2017-02-01

    To cater for the demands of electrochemical energy storage system, the development of cost effective, durable and highly efficient electrode materials is desired. Here, a novel electrode material based on redox active β-Co(OH)2 and B, N co-doped graphene nanohybrid is presented for electrochemical supercapacitor by employing a facile metal-organic frameworks (MOFs) route through pyrolysis and hydrothermal treatment. The Co(OH)2 could be firmly stabilized by dual protection of N-doped carbon polyhedron (CP) and B/N co-doped graphene (BCN) nanosheets. Interestingly, the porous carbon and BCN nanosheets greatly improve the charge storage, wettability, and redox activity of electrodes. Thus the hybrid delivers specific capacitance of 1263 F g‑1 at a current density of 1A g‑1 with 90% capacitance retention over 5000 cycles. Furthermore, the new aqueous asymmetric supercapacitor (ASC) was also designed by using Co(OH)2@CP@BCN nanohybrid and BCN nanosheets as positive and negative electrodes respectively, which leads to high energy density of 20.25 Whkg‑1. This device also exhibits excellent rate capability with energy density of 15.55 Whkg‑1 at power density of 9331 Wkg‑1 coupled long termed stability up to 6000 cycles.

  10. Synthesis and down-conversion luminescence properties of Er3+/Yb3+ co-doped AlF3-PbF2-CaF2 powders

    NASA Astrophysics Data System (ADS)

    Liu, Fangchao; Han, Qun; Liu, Tiegen; Chen, Yaofei; Du, Yang; Yao, Yunzhi

    2015-08-01

    Er3+/Yb3+ co-doped oxy-fluoride powders with varying Er/Yb concentration were prepared by a melt quenching method at various sintering temperature. The effect of the Er/Yb doped concentration and sintering temperature were analyzed by using optical absorption and emission techniques. The Judd-Ofelt theory has been used to evaluate the three intensity parameters (Ωλ, where λ = 2, 4 and 6) and calculate the oscillator strengths (fc). Ultraviolet-to-visible emissions were observed under the excitation of a 325 nm CW laser. It was found that the down-conversion fluorescence intensity changes with the sintering temperature and Er/Yb content ratio, the results were explained with the level transitions in Er3+/Yb3+ co-doped systems. The intensity ratios (intensity of 437 nm as reference) of the luminescence spectra that the samples sintered at various temperature are relevant to Ω6 parameter which indicates the vibration amplitude of the Er-O distance. The sintering temperature also has an influence on the intensity ratios via affecting the thermalization of the excited 4I15/2 level.

  11. Hierarchical Cobalt Hydroxide and B/N Co-Doped Graphene Nanohybrids Derived from Metal-Organic Frameworks for High Energy Density Asymmetric Supercapacitors

    PubMed Central

    Tabassum, Hassina; Mahmood, Asif; Wang, Qingfei; Xia, Wei; Liang, Zibin; Qiu, Bin; zhao, Ruo; Zou, Ruqiang

    2017-01-01

    To cater for the demands of electrochemical energy storage system, the development of cost effective, durable and highly efficient electrode materials is desired. Here, a novel electrode material based on redox active β-Co(OH)2 and B, N co-doped graphene nanohybrid is presented for electrochemical supercapacitor by employing a facile metal-organic frameworks (MOFs) route through pyrolysis and hydrothermal treatment. The Co(OH)2 could be firmly stabilized by dual protection of N-doped carbon polyhedron (CP) and B/N co-doped graphene (BCN) nanosheets. Interestingly, the porous carbon and BCN nanosheets greatly improve the charge storage, wettability, and redox activity of electrodes. Thus the hybrid delivers specific capacitance of 1263 F g−1 at a current density of 1A g−1 with 90% capacitance retention over 5000 cycles. Furthermore, the new aqueous asymmetric supercapacitor (ASC) was also designed by using Co(OH)2@CP@BCN nanohybrid and BCN nanosheets as positive and negative electrodes respectively, which leads to high energy density of 20.25 Whkg−1. This device also exhibits excellent rate capability with energy density of 15.55 Whkg−1 at power density of 9331 Wkg−1 coupled long termed stability up to 6000 cycles. PMID:28240224

  12. Enhanced near-infrared response of CdS/CdTe solar cell using Tm3+ and Yb3+ co-doped upconverting glass phosphors

    NASA Astrophysics Data System (ADS)

    Pan, Z.; Whyte, D.; Morgan, S. H.; Li, J.; Alaswad, A.; Beach, J. D.; Ohno, T. R.; Wolden, C. A.

    2014-10-01

    Tm3+ and Yb3+ co-doped upconverting (UC) glass phosphors were used to converting near-infrared to visible light and input to a CdS/CdTe solar cell, therefore to enhance solar cell's response in the near-infrared of the sub-bandgap region. Current-voltage measurements were performed on the solar cell with a UC glass phosphor. A short-circuit photocurrent enhancement of 31 μA was obtained using a Tm3+and Yb3+ co-doped glass UC phosphor, illuminated by a 980 nm diode laser at 100 mW. This photocurrent response corresponds to external quantum efficiency (EQE) of 0.04 % at 980 nm. For full collection of the UC light in 4π solid angle, the EQE value is expected to reach 1.6 %. The photo-current observed was proportional to the effective UC light intensity from glass UC phosphor. A non-linear relation between the output photo-current and the incident power of the infrared light was observed, similar to the relation between UC intensity and the incident power. UC efficiency of the glass phosphor was calculated using EQE values at both UC wavelengths and at 980 nm.

  13. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  14. Substantial enhancement in intrinsic coercivity on M-type strontium hexaferrite through the increase in magneto-crystalline anisotropy by co-doping of group-V and alkali elements

    SciTech Connect

    Ahn, Kyunghan Ryu, Byungki; Korolev, Dmitry; Jae Kang, Young

    2013-12-09

    The effect of d{sup 1} impurity doping in Sr-hexaferrite (SrM) on the magnetic anisotropy is investigated. First-principles calculations revealed that group-V elements (V, Nb) are stabilized with co-doping of alkali elements. Na{sup 1+}/K{sup 1+} doping at Sr{sup 2+}-site is found to be critical to form the d{sup 1} impurities at Fe-site. Experimentally, Na–V doped SrM shows the intrinsic coercivity of ∼5.4 kOe, which is ∼300% enhancement compared to undoped SrM and comparable value to La–Co co-doped SrM. Finally, the spin-orbit coupling from non-vanishing angular momentum of d{sup 1} impurity in SrM should be a main factor for such a substantial improvement of intrinsic coercivity.

  15. Enhanced photo-catalytic activity of Sr and Ag co-doped TiO2 nanoparticles for the degradation of Direct Green-6 and Reactive Blue-160 under UV & visible light.

    PubMed

    Naraginti, Saraschandra; Thejaswini, T V L; Prabhakaran, D; Sivakumar, A; Satyanarayana, V S V; Arun Prasad, A S

    2015-10-05

    This work is focused on sol-gel synthesis of silver and strontium co-doped TiO2 nanoparticles and their utilization as photo-catalysts in degradation of two textile dyes. Effect of pH, intensity of light, amount of photo-catalyst, concentration of dye, sensitizers, etc., were studied to optimize conditions for obtaining enhanced photo-catalytic activity of synthesized nanoparticles. XRD, BET, HR-TEM, EDAX and UV-Vis (diffused reflectance mode) techniques were used to characterize the nanoparticles. Interestingly, band gap of Sr and Ag co-doped TiO2 nanoparticles showed considerable narrowing (2.6 eV) when compared to Ag doped TiO2 (2.7 eV) and undoped TiO2 (3.17 eV) nanoparticles. Incorporation of Ag and Sr in the lattice of TiO2 could bring isolated energy levels near conduction and valence bands thus narrowing band gap. The XRD analysis shows that both Ag and Sr nanoparticles are finely dispersed on the surface of titania framework, without disturbing its crystalline structure. TEM images indicate that representative grain sizes of Ag-doped TiO2 & Sr and Ag co-doped TiO2 nanoparticles are in the range of 8-20 nm and 11-25 nm, respectively. Effective degradation of Direct Green-6 (DG-6) and Reactive Blue-160 (RB-160) under UV and visible light has been achieved using the photo-catalysts. Sr and Ag co-doped TiO2 photo-catalysts showed higher catalytic activity during degradation process in visible region when compared to Ag-doped and undoped TiO2 nanoparticles which could be attributed to the interactive effect caused by band gap narrowing and enhancement in charge separation. For confirming degradation of the dyes, total organic carbon (TOC) content was monitored periodically.

  16. Crossover between weak anti-localization and weak localization by Co doping and annealing in gapless PbPdO{sub 2} and spin gapless Co-doped PbPdO{sub 2}

    SciTech Connect

    Choo, S. M.; Lee, K. J.; Park, S. M.; Park, G. S.; Jung, M. H.; Yoon, J. B.; You, C.-Y.

    2015-04-27

    The magnetotransport properties of Pb(Pd,Co)O{sub 2} and PbPdO{sub 2} thin films were investigated. In magnetoconductance curves, we observed a crossover between weak anti-localization (WAL) and weak localization (WL) depending on the annealing and Co doping in PbPdO{sub 2} thin films. For the Pb(Pd,Co)O{sub 2} case showing WAL signals, the ex-situ annealing weakens the Pd-O hybridization by stabilizing Co{sup 3+} states and generating Pd{sup 1+} states, instead of Pd{sup 2+}, so that the spin-orbit coupling (SOC) strength is significantly reduced. It causes the dominant magnetotransport mechanism change from WAL to WL. This annealing effect is compared with the PbPdO{sub 2} case, which possesses WL signals. The annealing process stabilizes the oxygen states and enhances the Pd-O hybridization, and consequently the SOC strength is enhanced. Our experimental results are well explained by the Hikami-Larkin-Nagaoka theory in terms of two important physical parameters; SOC strength-related α and inelastic scattering length l{sub ϕ}.

  17. Role of donor defects in stabilizing room temperature ferromagnetism in (Mn, Co) co-doped ZnO nanoparticles.

    PubMed

    Naeem, M; Hasanain, S K

    2012-06-20

    We report the effects of co-doping ZnO with Co and Mn in an n-type environment on ferromagnetism (FM). Two sets of samples, Zn(0.95-x)Co(0.04)Mn(x)O (0.000 ≤ x ≤ 0.02) and Zn(0.95-y)Co(y)Mn(0.04)O (0.000 ≤ y ≤ 0.02), were synthesized by the chemical route with oxygen vacancies introduced via annealing in a forming gas (reducing the atmosphere). In addition to the magnetization, the particles were characterized by x-ray diffraction, diffuse reflectance spectroscopy and x-ray absorption near-edge emission spectroscopy. The Co and Mn ions were determined to be in the + 2 state in a tetrahedral symmetry, with no evidence of metallic Co or Mn. We find that while a purely Mn-doped sample exhibits weak FM at room temperature, the general effect of Mn as a co-dopant with Co, in an n-type environment, is to decrease the moment strongly. All of our results can be systematically explained within the context of defect mediated FM in these wide bandgap semiconductors, where the coincidence of the spin-split-impurity (defect) band states and the 3d states leads to the development of a net moment alongside the formation of spin polarons.

  18. Hydrothermal growth and conductivity enhancement of (Al, Cu) co-doped ZnO nanorods thin films

    NASA Astrophysics Data System (ADS)

    Chakraborty, Mohua; Mahapatra, Preetilata; Thangavel, R.

    2016-05-01

    The incorporation of Al, Cu co-doping in ZnO host lattice plays an important role in modification of structural, optical and electrical properties in optoelectronic devices. In the present work, we were grown one dimensional ZnO nanorods (NRs) doped with different concentration of Al (0%~5%) and Cu was kept 20 M% on ITO glass substrates using a facile hydrothermal method, and investigated the effect of the codoping on the surface morphology and the electrical and optical performances of the doped ZnO NRs as photo anodes for solar water splitting applications. The crystallite size of NRs shows tuning in the band gap between 3.194 (Zn0.79Al0.01Cu0.2O) to 3.212 eV (Zn0.75Al0.05Cu0.2O) with Aluminium doping concentration and a remarkable improvement in current density (J) from 0.05 mA/cm2 to 4.98 mA/cm2 was achieved by incorporating Al and Cu has a critical effect of ZnO nanorods.

  19. Magnetic and magnetocaloric properties of Ba and Ti co-doped SrRuO{sub 3}

    SciTech Connect

    Sarkar, Babusona; Dalal, Biswajit; Dev Ashok, Vishal; De, S. K.

    2014-12-28

    Temperature evolution of magnetic properties in Ba and Ti doped SrRuO{sub 3} has been investigated to observe the effects of larger ionic radius Ba at Sr site and isovalent nonmagnetic impurity Ti at Ru site. Ionic radius mismatch and different electronic configuration in comparison with Ru modify Sr(Ba)-O and Ru(Ti)-O bond lengths and Ru-O-Ru bond angle. The apical and basal Ru-O-Ru bond angles vary significantly with Ti doping. Ferromagnetic Curie temperature decreases from 161 K to 149 K monotonically with Ba (10%) and Ti (10%) substitutions at Sr and Ru sites. The zero field cooled (ZFC) magnetization reveals a prominent peak which shifts towards lower temperature with application of magnetic field. The substitution of tetravalent Ti with localized 3d{sup 0} orbitals for Ru with more delocalized 4d{sup 4} orbitals leads to a broad peak in ZFC magnetization. A spontaneous ZFC magnetization becomes negative below 160 K for all the compositions. The occurrence of both normal and inverse magnetocaloric effects in Ba and Ti co-doped SrRuO{sub 3} makes the system more interesting.

  20. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  1. Electronic and optical properties study on Fesbnd B co-doped anatase TiO2

    NASA Astrophysics Data System (ADS)

    Li, Xuechao; Shi, Jianhao; Chen, Hao; Wan, Rundong; Leng, Chongyan; Lei, Ying

    2016-09-01

    We investigate the density of states and optical properties for Fe, 2B and (Fe, 2B) doped TiO2 with DFT calculations. The calculated results reveal mono-doping introduces midgap states which are half-occupied and easy to become the recombination centers of charge carriers, thus inhibiting the enhancement of photocatalystic activity. The coupling of 2p-3d states in the (Fe, 2B) compensated co-doped TiO2 makes gap states couple with the valence bands edge, thus greatly causing the band gap narrowing and higher visible light absorption. Moreover, the gap states cannot become recombination centers of the photoexcited carriers, thus promoting the separation of electron-hole pairs, prolonging the lifetime of carriers. The analysis of electron density indicates more electrons from Fe transfer to adjacent B, realizing the charge compensation and forming a stronger Fesbnd B bond. Therefore, the (Fe, 2B) compensated co-doped TiO2 exhibits the higher visible-light photocatalystic activity than those of pure and solely doped TiO2.

  2. Luminescent properties of Tm3+/ Ho3+ co-doped LiYF4 crystals

    NASA Astrophysics Data System (ADS)

    Li, Shan-shan; Xia, Hai-ping; Dong, Yan-ming; Fu, Li; Gu, Xue-mei; Zhang, Jian-li; Wang, Dong-jie; Jiang, Hao-chuan; Chen, Bao-jiu

    2014-11-01

    Ho3+ with various concentrations and Tm3+ with molar concentration of 1.28% are co-doped in LiYF4 (YLF) single crystals. The luminescent properties of the crystals are investigated through emission spectra, emission cross section and decay curves under the excitation of 808 nm. The energy transfer from Tm3+ to Ho3+ and the optimum fluorescence emission of Ho3+ around 2.05 μm are investigated. The emission intensity at 2.05 μm keeps increasing with the molar concentration of Ho3+ improved from 0.50% to 1.51% when the molar concentration of Tm3+ is kept at 1.28%. Moreover, for the co-doped crystals in which the molar concentrations of Tm3+ and Ho3+ are 1.28% and 1.51%, respectively, the maximum emission cross section reaches 0.760×10-20 cm2 and the maximum fluorescence lifetime is 21.98 ms. All the parameters suggest that these materials have more advantages in the future 2.0 μm laser applications.

  3. Preparation and characterization of Mn and (Mn, Cu) co-doped ZnO nanostructures.

    PubMed

    Wang, H B; Wang, H; Zhang, C; Yang, F J; Duan, J X; Yang, C P; Gu, H S; Zhou, M J; Li, Q; Jiang, Y

    2009-05-01

    We report on the ferromagnetic characteristics of Zn(1-x)Mn(x)O nanorods synthesized by a seed-mediated solution method. The as-doped ZnO nanorods had a length about 200 nm and a diameter ranging from 20 to 30 nm. Magnetic property measurements revealed that the Zn(1-x)Mn(x)O nanorods exhibited weak ferromagnetism at 305 K. Similar solution method were also employed to fabricate the (Mn, Cu) co-doped nanostructures. The presence of Cu2+ was found to change the nanorod morphology (in the case of pure ZnO) to nanoparticle. On the other hand, not only the hysteresis curve saturated at lower magnetic field, but also the saturation magnetization was increased with the Cu doping. Transmission electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence analysis suggested that the room temperature (RT) ferromagnetism could be originated from the Mn2+ doped into the ZnO lattice, and additional carriers due to the Cu co-doping may enhance the room temperature ferromagnetism in the Mn:ZnO system.

  4. Electron transport in Al-Cu co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serin, T.; Atilgan, A.; Kara, I.; Yildiz, A.

    2017-03-01

    To investigate the influence of varying Al content on structural, optical, and electrical properties of ZnO thin films, Al-Cu co-doped ZnO thin films with fixed Cu content at 1 wt. % and different Al contents (1, 3, and 5 wt. %) were successfully synthesized on glass substrates using a sol-gel process. The results indicated that the varying Al content affects not only the grain size and band gap but also the electrical conductivity of the films, and a linear relationship was found between the band gap and strain values of the films. The temperature-dependent electrical conductivity data of the films demonstrated that electron transport was mainly controlled by the grain boundaries at intermediate and high temperatures, whereas it was governed by Mott-variable range hopping at low temperatures. Additionally, 3 wt. % Al content improved the electrical conductivity of Al-Cu co-doped ZnO by lowering the trap density and enhancing the hopping probability.

  5. Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Wang, Dao-Long; Wang, Chun-Lei; Jin, Xin-Xin; Qiu, Jie-Shan

    2014-08-01

    Oxidized asphaltene (OA), a thermosetting material with plenty of functional groups, is synthesized from asphaltene (A) using HNO3/H2SO4 as the oxidizing agent. Boron, nitrogen co-doped porous carbon (BNC—OA) is prepared by carbonization of the mixture of boric acid and OA at 1173 K in an argon atmosphere. X-ray photoelectron spectroscopy (XPS) characterization reveals that the BNC—OA has a nitrogen content of 3.26 at.% and a boron content of 1.31 at.%, while its oxidation-free counterpart (BNC—SA) has a nitrogen content of 1.61 at.% and a boron content of 3.02 at.%. The specific surface area and total pore volume of BNC—OA are 1103 m2·g-1 and 0.921 cm3·g-1, respectively. At a current density of 0.1 A·g-1, the specific capacitance of BNC-OA is 335 F·g-1 and the capacitance retention can still reach 83% at 1 A·g-1. The analysis shows that the superior electrochemical performance of the BNC—OA is attributed to the pseudocapacitance behavior of surface heteroatom functional groups and an abundant pore-structure. Boron, nitrogen co-doped porous carbon is a promising electrode material for supercapacitors.

  6. Structural characterization and magnetic properties of Co co-doped Ni/ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vijayaprasath, G.; Murugan, R.; Asaithambi, S.; Babu, G. Anandha; Sakthivel, P.; Mahalingam, T.; Hayakawa, Y.; Ravi, G.

    2016-02-01

    In this paper, we present the structural, morphological, optical and magnetic properties of Zn1- x A x O ( A = Ni, Co and x = 0.20 mol%) and Zn0.80Ni0.10Co0.10O nanoparticles synthesized by a chemical co-precipitation method. Powder X-ray diffraction data confirm the formation of a single-phase wurtzite-type ZnO structure for all the samples. FTIR and EDS measurements ensure that the divalent Ni and Co ions are incorporated in the wurtzite host matrix without any impurity phase. Photoluminescence and Raman spectra indicate the presence of donor defects and oxygen vacancies in the prepared samples. In VSM analysis, undoped ZnO nanoparticles exhibit diamagnetic behavior at room temperature. A systematic increase in ferromagnetic moment (~0.70 emu/g) is observed for Ni-, Co-doped and Co co-doped Ni/ZnO at 300 K. The exchange interaction between delocalized carriers and the localized `d' spins of Ni and Co ions is predicted as the cause of the room temperature ferromagnetism.

  7. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  8. Extrinsic origin of room-temperature ferromagnetism in Co-doped ZnO annealed in Zn vapor

    NASA Astrophysics Data System (ADS)

    Yan, Guoqing; Xuan, Haicheng

    2011-08-01

    Co-doped ZnO and CoO were prepared at 950 °C by the solid-state reaction method, then were annealed in N2 flow at 950 °C, and finally annealed in Zn vapor at 600 °C or 800 °C. The samples before annealing in Zn vapor have no ferromagnetism, but after annealing in Zn vapor, Co-doped ZnO and CoO both exhibit room-temperature ferromagnetism. Through x-ray diffraction and element composition measurements, it was found that the ferromagnetism of Co-doped ZnO annealed in Zn vapor is extrinsic and comes from cubic Co5Zn21 and/or cubic CoZn.

  9. In-situ, Gate Bias Dependent Study of Neutron Irradiation Effects on AlGaN/GaN HFETs

    DTIC Science & Technology

    2010-03-01

    Applied Physics Letters , vol.82, no. 22, 2 June 2008. 72 [12] D. M. Sathaiya, et al., "Thermionic trap-assisted tunneling model and its... Letters , vol. 25, no. 3, 1045, 2008. [18] A. Y. Polyakov , et al., “Neutron irradiation effects on electrical properties and deep-level spectra in...undoped n-AlGaN/GaN heterostructures,” Journal of Applied Physics , vol. 98, 033529, 2005. [19] A. Y. Polyakov , et al., “Neutron irradiation effects in

  10. Optical investigation of the one-dimensional confinement effects in narrow GaAs/GaAlAs quantum wires

    NASA Astrophysics Data System (ADS)

    Birotheau, L.; Izrael, A.; Marzin, J. Y.; Azoulay, R.; Thierry-Mieg, V.; Ladan, F. R.

    1992-12-01

    We show optical data obtained at 8 K on narrow GaAs/GaAlAs quantum wires, with width down to 15 nm, fabricated by reactive ion etching and metal organic chemical vapor deposition overgrowth. Lateral confinement energies (up to 23 meV) and polarization effects are evidenced in the photoluminescence excitation spectra. These experimental results are in good agreement with calculated absorption spectra, which include the effects of wire width fluctuations, yielding, for our fabrication technique, a value of ±5 nm for these size fluctuations.

  11. Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells

    NASA Astrophysics Data System (ADS)

    Ganichev, S. D.; Ketterl, H.; Prettl, W.; Ivchenko, E. L.; Vorobjev, L. E.

    2000-11-01

    The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurrence of the linear photogalvanic effect indicate a reduced point symmetry of studied multilayered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.

  12. AlGaN/GaN based field effect transistors for terahertz detection and imaging

    NASA Astrophysics Data System (ADS)

    Sakowicz, M.; Lifshits, M. B.; Klimenko, O. A.; Coquillat, D.; Dyakonova, N.; Teppe, F.; Gaquière, C.; Poisson, M. A.; Delage, S.; Knap, W.

    2012-03-01

    AlGaN/GaN based FETs have great potential as sensitive and fast operating detectors because of their material advantages such as high breakdown voltage, high electron mobility, and high saturation velocity. These advantages could be exploited for resonant and non-resonant terahertz detection. We have designed, fabricated, and characterized AlGaN/GaN based FETs as single pixel terahertz detectors. This work focuses on non-resonant detection and imaging using GaN field plate FETs. To evaluate their performances as terahertz detectors, we have measured the responsivity as a function of gate voltage, the azimuthal angle between the terahertz electric field, the source-to-drain direction, and the temperature. A simple analytical model of the response is developed. It is based on plasma density perturbation in the transistor channel by the incoming terahertz radiation. The model shows how the non-resonant detection signal is related to static (dc) transistor characteristics and it fully describes the experimental results on the non-resonant sub-terahertz detection by the AlGaN/GaN based FETs. The imaging performances are evaluated by scanning objects in transmission mode and an example of application of terahertz imaging as new non-destructive technique for the quality control of materials is given. Results indicate that these FETs can be considered as promising devices for terahertz detection and imaging applications.

  13. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  14. Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Jeon, Chang Min; Lee, Jong-Lam

    2005-04-01

    The effects of tensile stress induced by silicon nitride (Si3N4) passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors (HFETs) were investigated. The biaxial tensile stress applied to the AlGaN layer was increased with the thickness of the Si3N4 passivation layer, leading to the increase of sheet charge density confined at the heterointerface. The stress-induced charge density was 1.75×1011e/cm2 for 80-nm-thick Si3N4 and 6.74×1011e/cm2 for 500-nm-thick Si3N4. The maximum drain current and transconductance of AlGaN /GaN HFET increased from 769 to 858mA/mm and from 146 to 155mS/mm after passivation, respectively.

  15. Semi-metallic to semiconducting transition in graphene nanosheet with site specific co-doping of boron and nitrogen

    NASA Astrophysics Data System (ADS)

    Nath, Palash; Sanyal, Dirtha; Jana, Debnarayan

    2014-02-01

    Present work reports the modifications of band structure and density of states of graphene nanosheet by substitutional co-doping of boron (B) and nitrogen (N) in the pristine graphene system. Using ab-initio density functional theory (DFT) we show that the doping position plays an important key role to determine the band-gap in the graphene system. Co-doping of B and N at different sub-lattice positions in the planar graphene structure results different modifications in the band structure and density of states (DOS). Particular choice of sub-lattice doping position of B and N yields a finite value of band gap.

  16. Er/Yb co-doped oxy-fluoride glass-ceramics core/polymer cladding optical fibers

    NASA Astrophysics Data System (ADS)

    Czerska, E.; Świderska, M.

    2014-11-01

    Erbium/ytterbium co-doped glasses can be applied as NIR laser sources (1.55 μm) or optical amplifiers in this range. About hundred meters of Er/Yb co-doped oxy-fluoride glass-ceramics fibers have been drawn from a glass preform followed by controlled annealing. Processing temperatures (drawing and annealing) were selected upon thermal analysis results (DTA/DSC plots). Glass-ceramic structure was confirmed by the XRD measurements. Obtained fibers show good optical properties. As a cladding material polymer material (acrylic resin) is considered due to its low deposition temperature and suitable value of refractive index.

  17. NIR luminescence studies on Er3+:Yb3+ co-doped sodium telluroborate glasses for lasers and optical amplifer applications

    NASA Astrophysics Data System (ADS)

    Annapoorani, K.; Murthy, N. Suriya; Marimuthu, K.

    2016-05-01

    Er3+:Yb3+ co-doped Sodium telluroborate glasses were prepared with the chemical composition (49.5-x)B2O3+25TeO2+5Li2CO3+10ZnO+10NaF+0.5Er2O3+xYb2O3 (where x= 0.1, 0.5, 1.0 and 2.0 in mol %) following the melt quenching technique. With the addition of Yb3+ ions into Er3+ ions in the prepared glasses, the absorption cross-section values were found to increase due to the effective energy transfer from 2F5/2 level of Yb3+ ions to the 4I11/2 level of Er3+ ions. The fluorescence around 1550 nm correspond to the 4I13/2→4I15/2 transition was observed under 980 nm pumping. Among the present glasses, integrated intensity was found to be higher for 1.0 mol% Yb3+ ion glass. The parameters such as stimulated emission cross- section, Gain bandwidth and quantum efficiency of the 4I13/2→4I15/2 transition was found to be higher for the NTBE1.0Y glass and the same is suggested for potential NIR lasers and optical amplifier applications.

  18. Preparation and scintillating properties of Sol-Gel Eu(3+), TB(3+) co-doped Lu(2)O(3) nanopowders.

    PubMed

    de Jesús Morales Ramírez, Angel; Murillo, Antonieta García; de Jesús Carrillo Romo, Felipe; Hernández, Margarita García; Palmerin, Joel Moreno; Guerrero, Rosario Ruiz

    2011-01-01

    Nanocrystalline Eu(3+), Tb(3+) co-doped Lu(2)O(3) powders with a maximum size of 25.5 nm were prepared by the sol-gel process, using lutetium, europium and terbium nitrates as precursors, and ethanol as a solvent. Differential thermal analysis (DTA) and infrared spectroscopy (IR) were used to study the chemical changes during the xerogel annealing. After the sol evaporation at 100 °C, the formed gel was annealed from 300 to 900 °C for 30 min under a rich O(2) atmosphere, and the yielded product was analyzed by X-ray diffraction (XRD) to characterize the microstructural behavior and confirm the crystalline structure. The results showed that Lu(2)O(3) nanopowders start to crystallize at 400 °C and that the crystallite size increases along with the annealing temperature. A transmission electron microscopy (TEM) study of samples annealed at 700 and 900 °C was carried out in order to analyze the microstructure, as well as the size, of crystallites. Finally, in regard to scintillating properties, Eu(3+) dopant (5 mol%), Tb(3+) codoped Lu(2)O(3) exhibited a typical red emission at 611 nm (D(°)→(7)F(2)), furthermore, the effect of Tb(3+) molar content (0.01, 0.015 and 0.02% mol) on the Eu(3+) radioluminiscence was analyzed and it was found that the higher emission intensity corresponds to the lower Tb(3+) content.

  19. Enhanced room temperature ferromagnetism and photoluminescence behavior of Cu-doped ZnO co-doped with Mn

    NASA Astrophysics Data System (ADS)

    Ashokkumar, M.; Muthukumaran, S.

    2015-05-01

    Cu, Mn co-doped ZnO nanoparticles were successfully synthesized by the sol-gel technique. XRD pattern described that Mn-doping did not affect the hexagonal wurtzite structure of the samples and no secondary phases were found. The reduced crystallite size at Mn=2% is due to the suppression of grain surface growth by foreign impurity. The enhancement of crystal size after Mn=2% is due to the expansion of lattice volume produced by the distortion around the dopant ion. The better dielectric constant and conductivity noticed at Mn=2% are explained by charge carrier density and crystallite size. The suppression of broad UV band by Mn-doping is discussed based on the generation of non-radiative recombination centers. Hysteresis loop showed the clear room temperature ferromagnetism in all the samples and the magnetization increased with Mn-doping. Better electrical and magnetic behavior of Zn0.94Cu0.04Mn0.02O sample is suggested for effective opto-magnetic devices.

  20. Competition between antiferromagnetism and ferromagnetism in Sr2RuO4 probed by Mn and Co doping.

    PubMed

    Ortmann, J E; Liu, J Y; Hu, J; Zhu, M; Peng, J; Matsuda, M; Ke, X; Mao, Z Q

    2013-10-15

    Spin-triplet superconductivity in Sr2RuO4 has attracted enormous interest. Like other unconventional superconductors, superconductivity in Sr2RuO4 is in close proximity to magnetic instability. Undoped Sr2RuO4 exhibits incommensurate antiferromagnetic (AFM) fluctuations, which can evolve into static, short-range AFM order via Ti doping. Moreover, weak ferromagnetic (FM) coupling in Sr2RuO4 has also been suggested by NMR/neutron scattering experiments and studies on Ca2-xSrxRuO4 and Sr2-yLayRuO4, implying orbital dependent magnetism. We report bulk static, short-range FM order in Sr2RuO4 triggered by <2% Co doping, showing superconductivity in Sr2RuO4 is much closer to FM instability than previously reported in Ca2-xSrxRuO4. We also find Mn doping can effectively establish incommensurate AFM order, with TN ~ 50 K for 3% Mn doping. These new results place Sr2RuO4 in a unique situation where superconductivity lies directly on the borderline of two distinct magnetic states, highlighting the important role of competing magnetic fluctuations in determining superconducting properties of Sr2RuO4.

  1. CuO nanoparticles supported on nitrogen and sulfur co-doped graphene nanocomposites for non-enzymatic glucose sensing

    NASA Astrophysics Data System (ADS)

    Li, Meixia; Guo, Qingbin; Xie, Juan; Li, Yongde; Feng, Yapeng

    2017-01-01

    Developing highly active catalysts to promote the electrocatalytic glucose oxidation (EGO) is a crucial demand for non-enzymatic glucose sensing. Herein, we reported the use of nitrogen and sulfur co-doped graphene (NSG) as a novel support material for anchoring CuO nanoparticles and obtained CuO/NSG was employed as an efficient EGO catalyst for non-enzymatic glucose sensing. The results showed that the NSG endowed the CuO/NSG with large surface area, increased structural defects, improved conductivity, and strong covalent coupling between NSG and CuO. Owing to the significant contribution of NSG and the synergistic effect of NSG and CuO, the CuO/NSG exhibited a remarkably higher EGO activity than CuO and CuO/reduced graphene oxide. The CuO/NSG-based sensor displayed excellent glucose sensing performances with a considerably low detection limit of 0.07 μM. These findings elucidate that the NSG is a promising support material for non-enzymatic glucose detection.

  2. Synthesis and characterization of ZrO2-CuO co-doped ceria nanoparticles via chemical precipitation method.

    PubMed

    Viruthagiri, G; Gopinathan, E; Shanmugam, N; Gobi, R

    2014-10-15

    In the present study, the fluorite cubic phase of bare and ZrO2-CuO co-doped ceria (CeO2) nanoparticles have been synthesized through a simple chemical precipitation method. X-ray diffraction results revealed that average grain sizes of the samples are within 5-6nm range. The functional groups present in the samples were identified by Fourier Transform Infrared Spectroscopy (FTIR) study. Surface area measurement was carried out for the ceria nanoparticles to characterize the surface properties of the synthesized samples. The direct optical cutoff wavelength from DRS analysis was blue-shifted evidently with respect to the bulk material and indicated quantum-size confinement effect in the nanocrystallites. PL spectra revealed the strong and sharp UV emission at 401nm. The surface morphology and the element constitution of the pure and doped nanoparticles were studied by scanning electron microscope fitted with energy dispersive X-ray spectrometer arrangement. The thermal decomposition course was followed using thermo gravimetric and differential thermal analyses (TG-DTA).

  3. Synthesis, characterization and photocatalytic study of graphene oxide and cerium co-doped in TiO2

    NASA Astrophysics Data System (ADS)

    Li, Jia; Zhang, Quan; Zeng, Liping; He, Deliang

    2016-02-01

    The nanocomposite of titanium dioxide (TiO2) combined with graphene oxide (GO) and cerium (Ce) was successfully synthesized via sol-gel method followed by calcining at 300 °C for 2 h. The composite was characterized by X-ray diffraction, ultraviolet-visible diffuse reflectance spectroscopy, scanning electron microscopy (SEM) and Brunauer-Emmett-Teller. The photocatalytic activity was evaluated by photodegradation of methylene blue (MB) under the irradiation of xenon lamp. This study demonstrated that GO and Ce co-doped in TiO2 could broaden absorption edge to the visible light and increase surface area of samples. SEM observation showed that addition of Ce could solve the problem of the agglomeration of GO under the same experimental conditions. Moreover, the MB photocatalytic degradation rate of the composite with GO doped for 0.2 % and Ce doped for 0.6 % (mass ratio) was up to 97.7 %, which was largely attributed to the synergistic effects in the GO, Ce and TiO2 system.

  4. TiO2 nanopowder co-doped with iodine and boron to enhance visible-light photocatalytic activity.

    PubMed

    Ding, Jianqiang; Yuan, Yali; Xu, Jinsheng; Deng, Jian; Guo, Jianbo

    2009-10-01

    An iodine and boron co-doped TiO2 photocatalyst was prepared by the hydrolyzation-precipitation method. X-ray diffraction (XRD), ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS), and X-ray photoelectron spectroscopy (XPS) were applied to characterize the crystalline structure, light absorbing ability, and the chemical state of iodine and boron in the photocatalysts. The results of photocatalytic degradation of methyl orange demonstrated that the I-B-TiO2 catalyst prepared at 400 degrees C for 3 h exhibited the highest photocatalytic activity with a methyl orange degradation ratio of 61% under visible-light (lambda > or = 420 nm) irradiation for 120 min. The characterization results revealed that I-B-TiO2 is in conformity with the anatase TiO2 and that the doping of iodine and boron ions could efficiently inhibit the grain growth. Doped iodine was present in the multivalent forms of 17+, I- and I5+. Doped boron was present as B3+ in an as-prepared sample, forming a possible chemical environment such as B-O-Ti. Overall, the doping of I and B enhanced the ability of TiO2 to absorb visible-light, and it was observed that the photocatalytic activity of I-B-TiO2 was enhanced by the synergistic effect of I and B.

  5. Hydrothermal synthesis of Yb3+, Tm3+ co-doped Gd6MoO12 and its upconversion properties

    NASA Astrophysics Data System (ADS)

    Di, Qiu-Mei; Sun, Yu-Mei; Xu, Qi-Guang; Han, Liu; Xue, Bing; Sun, Jia-Yue

    2015-06-01

    Yb3+, Tm3+ co-doped Gd6MoO12 phosphors with different morphologies are prepared by the hydrothermal method. The dendrites present different morphologies (including hexagonal prisms, spindles, and spheres) after changing the pH value and edetate disodium (EDTA) usage. It is found that each of the two factors plays a crucial role in forming different morphologies. The up-conversion (UC) luminescence is studied. Under 980-nm semiconductor laser excitation, relatively strong blue emission and weak red emission are observed. Finally, the effect of pumping power on the UC luminescence properties and the level diagram mechanism of Gd6MoO12:Yb3+/Tm3+ phosphor are also discussed. Project supported by the National Natural Science Foundation of China (Grant No. 20976002), the Beijing Natural Science Foundation, China (Grant No. 2122012), the Key Projects for Science and Technology of Beijing Education Commission, China (Grant No. KZ201310011013), and the Education and Research Fund of Guangdong Province, China (Grant No. 2011B090400100).

  6. Sulfur impregnated N, P co-doped hierarchical porous carbon as cathode for high performance Li-S batteries

    NASA Astrophysics Data System (ADS)

    Cai, Junjie; Wu, Chun; Zhu, Ying; Zhang, Kaili; Shen, Pei Kang

    2017-02-01

    A nitrogen and phosphorus co-doped hierarchical porous carbon (N, P-HPC) were fabricated by simply pyrolysis of polyaniline aerogels in the presence of phytic acid and subsequently activation treatment by KOH. The as-prepared N, P-HPC with a highly interconnected network structure and possesses a large surface area and pore volume is very favor in the impregnation of sulfur. Moreover, simultaneously introduced nitrogen and phosphorous into the carbon could create more active sites than the mono-doped carbons, the synergistic effects of dual activation of carbon atoms induced stronger chemical adsorption ability. Benefiting from the advantages of suitable hierarchical porosity, high conductivity, fast ion transportation, physical and chemical adsorption of the N, P-HPC, the Sulfur/N, P-HPC composite exhibits high initial discharge capacity of 1116 mAh g-1 at 0.1 C (1 C = 1675 mA g-1, based on sulfur content) and high rate capability of 550 mAh g-1 at 2C, as well as excellent long term cycling stability at a current rate of 1 C with only 0.058% capacity decay per cycle for over 500 cycles. Such a high capacity and stability suggests that the novel cathode have alluring prospect for Li-S batteries.

  7. Preparation and Scintillating Properties of Sol-Gel Eu3+, Tb3+ Co-Doped Lu2O3 Nanopowders

    PubMed Central

    de Jesús Morales Ramírez, Ángel; Murillo, Antonieta García; de Jesús Carrillo Romo, Felipe; Hernández, Margarita García; Palmerin, Joel Moreno; Guerrero, Rosario Ruiz

    2011-01-01

    Nanocrystalline Eu3+, Tb3+ co-doped Lu2O3 powders with a maximum size of 25.5 nm were prepared by the sol-gel process, using lutetium, europium and terbium nitrates as precursors, and ethanol as a solvent. Differential thermal analysis (DTA) and infrared spectroscopy (IR) were used to study the chemical changes during the xerogel annealing. After the sol evaporation at 100 °C, the formed gel was annealed from 300 to 900 °C for 30 min under a rich O2 atmosphere, and the yielded product was analyzed by X-ray diffraction (XRD) to characterize the microstructural behavior and confirm the crystalline structure. The results showed that Lu2O3 nanopowders start to crystallize at 400 °C and that the crystallite size increases along with the annealing temperature. A transmission electron microscopy (TEM) study of samples annealed at 700 and 900 °C was carried out in order to analyze the microstructure, as well as the size, of crystallites. Finally, in regard to scintillating properties, Eu3+ dopant (5 mol%), Tb3+ codoped Lu2O3 exhibited a typical red emission at 611 nm (D°→7F2), furthermore, the effect of Tb3+ molar content (0.01, 0.015 and 0.02% mol) on the Eu3+ radioluminiscence was analyzed and it was found that the higher emission intensity corresponds to the lower Tb3+ content. PMID:22016655

  8. Enhanced luminescence and white light emission from Eu(3+) -co-doped K3 Ca2 (SO4 )3 Cl:Dy(3+) phosphor with near visible ultraviolet excitation for white LEDs.

    PubMed

    Baig, N; Dhoble, N S; Park, K; Kokode, N S; Dhoble, S J

    2015-06-01

    The luminescent properties of europium (Eu)- and dysprosium (Dy)-co-doped K3 Ca2 (SO4 )3 Cl halosulfate phosphors were analyzed. This paper reports the photoluminescence (PL) properties of K3 Ca2 (SO4 )3 Cl microphosphor doped with Eu and Dy and synthesized using a cost-effective wet chemical method. The phosphors were characterized by X-ray diffraction and scanning electron microscopy. The CIE coordinates were calculated to display the color of the phosphor. PL emission of the prepared samples show peaks at 484 nm (blue), 575 nm (yellow), 594 nm (orange) and 617 nm (red). The emission color of the Eu,Dy-co-doped K3 Ca2 (SO4 )3 Cl halophosphor depends on the doping concentration and excitation wavelength. The addition of Eu in K3 Ca2 (SO4 )3 Cl:Dy greatly enhances the intensity of the blue and yellow peaks, which corresponds to the (4)  F9/2  → (6) H15/2 and (4)  F9/2  → (6) H13/2 transitions of Dy(3+) ions (under 351 nm excitation). The Eu(3+) /Dy(3+) co-doping also produces white light emission for 1 mol% of Eu(3+) , 1 mol% of Dy(3+) in the K3 Ca2 (SO4 )3 Cl lattice under 396 nm excitation, for which the calculated chromaticity coordinates are (0.35, 0.31). Thus, K3 Ca2 (SO4 )3 Cl co-doped with Eu/Dy is a suitable candidate for NUV based white light-emitting phosphors technology.

  9. Effects of Ga Addition on Interfacial Reactions Between Sn-Based Solders and Ni

    NASA Astrophysics Data System (ADS)

    Wang, Chao-Hong; Li, Kuan-Ting

    2016-12-01

    The use of Ga as a micro-alloying element in Sn-based solders can change the microstructure of solder joints to improve the mechanical properties, and even suppress the interfacial intermetallic compound (IMC) growth. This research investigated the effects of Ga addition (0.2-1 wt.%Ga) on the IMC formation and morphological evolution in the Sn-based solder joints with Ni substrate. In the soldering reaction at 250°C and with less than 0.2 wt.%Ga addition, the formed phase was Ni3Sn4. When the Ga addition increased to 0.5 wt.%, it changed to a thin Ni2Ga3 layer of ˜1 μm thick, which stably existed at the interface in the initial 1-h reaction. Subsequently, the whole Ni2Ga3 layer detached from the Ni substrate and drifted into the molten solder. The Ni3Sn4 phase became dominant in the later stage. Notably, the Ga addition significantly reduced the grain size of Ni3Sn4, resulting in the massive spalling of Ni3Sn4 grains. With 1 wt.%Ga addition, the Ni2Ga3 layer remained very thin with no significant growth, and it stably existed at the interface for more than 10 h. In addition, the solid-state reactions were examined at temperatures of 160°C to 200°C. With addition of 0.5 wt.%Ga, the Ni3Sn4 phase dominated the whole reaction. By contrast, with increasing to 1 wt.%Ga, only a thin Ni2Ga3 layer was found even after aging at 160°C for more than 1200 h. The 1 wt.%Ga addition in solder can effectively inhibit the Ni3Sn4 formation in soldering and the long-term aging process.

  10. An Improved Metal-Packaged Strain Sensor Based on A Regenerated Fiber Bragg Grating in Hydrogen-Loaded Boron-Germanium Co-Doped Photosensitive Fiber for High-Temperature Applications.

    PubMed

    Tu, Yun; Ye, Lin; Zhou, Shao-Ping; Tu, Shan-Tung

    2017-02-23

    Local strain measurements are considered as an effective method for structural health monitoring of high-temperature components, which require accurate, reliable and durable sensors. To develop strain sensors that can be used in higher temperature environments, an improved metal-packaged strain sensor based on a regenerated fiber Bragg grating (RFBG) fabricated in hydrogen (H₂)-loaded boron-germanium (B-Ge) co-doped photosensitive fiber is developed using the process of combining magnetron sputtering and electroplating, addressing the limitation of mechanical strength degradation of silica optical fibers after annealing at a high temperature for regeneration. The regeneration characteristics of the RFBGs and the strain characteristics of the sensor are evaluated. Numerical simulation of the sensor is conducted using a three-dimensional finite element model. Anomalous decay behavior of two regeneration regimes is observed for the FBGs written in H₂-loaded B-Ge co-doped fiber. The strain sensor exhibits good linearity, stability and repeatability when exposed to constant high temperatures of up to 540 °C. A satisfactory agreement is obtained between the experimental and numerical results in strain sensitivity. The results demonstrate that the improved metal-packaged strain sensors based on RFBGs in H₂-loaded B-Ge co-doped fiber provide great potential for high-temperature applications by addressing the issues of mechanical integrity and packaging.

  11. An Improved Metal-Packaged Strain Sensor Based on A Regenerated Fiber Bragg Grating in Hydrogen-Loaded Boron–Germanium Co-Doped Photosensitive Fiber for High-Temperature Applications

    PubMed Central

    Tu, Yun; Ye, Lin; Zhou, Shao-Ping; Tu, Shan-Tung

    2017-01-01

    Local strain measurements are considered as an effective method for structural health monitoring of high-temperature components, which require accurate, reliable and durable sensors. To develop strain sensors that can be used in higher temperature environments, an improved metal-packaged strain sensor based on a regenerated fiber Bragg grating (RFBG) fabricated in hydrogen (H2)-loaded boron–germanium (B–Ge) co-doped photosensitive fiber is developed using the process of combining magnetron sputtering and electroplating, addressing the limitation of mechanical strength degradation of silica optical fibers after annealing at a high temperature for regeneration. The regeneration characteristics of the RFBGs and the strain characteristics of the sensor are evaluated. Numerical simulation of the sensor is conducted using a three-dimensional finite element model. Anomalous decay behavior of two regeneration regimes is observed for the FBGs written in H2-loaded B–Ge co-doped fiber. The strain sensor exhibits good linearity, stability and repeatability when exposed to constant high temperatures of up to 540 °C. A satisfactory agreement is obtained between the experimental and numerical results in strain sensitivity. The results demonstrate that the improved metal-packaged strain sensors based on RFBGs in H2-loaded B–Ge co-doped fiber provide great potential for high-temperature applications by addressing the issues of mechanical integrity and packaging. PMID:28241465

  12. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    PubMed Central

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-01-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

  13. Sulfur and iron co-doped titanoniobate nanosheets: a novel efficient solid acid catalyst for alcoholysis of styrene epoxide at room temperature.

    PubMed

    Zhang, Lihong; Hu, Chenhui; Zhang, Junfeng; Cheng, Liyuan; Zhai, Zheng; Chen, Jing; Ding, Weiping; Hou, Wenhua

    2013-09-04

    Sulfur and iron co-doped titanoniobate nanosheets were prepared and evaluated in alcoholysis of styrene epoxide. The resultant co-doped catalyst exhibited excellent catalytic performance (yield of 99% with methanol as the nucleophile in only 1 h at room temperature) and may act as a promising candidate in many acid-catalyzed reactions.

  14. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  15. Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures

    SciTech Connect

    Kurylyuk, V. V. Korotchenkov, O. A.

    2009-04-15

    The resonance electroacoustic vibrations in the GaAs/AlGaAs-LiNbO{sub 3} hybrid structure with the slippery interface and the effect of redistribution of the two-dimensional electron gas density in the heterostructure by the induced piezoelectric fields are analyzed theoretically. The calculations are performed by the finite element method. The experimentally recorded time-resolved Raman spectra exhibit some specific features of the behavior of the LO-phonon-plasmon mode. The features are consistent with the theoretically calculated redistribution of the density of the electron gas.

  16. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  17. Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors

    SciTech Connect

    Wu, Yi-Chen; Tsai, Jung-Hui; Chiang, Te-Kuang; Chiang, Chung-Cheng; Wang, Fu-Min

    2015-02-15

    DC performance of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors (DCFETs) is demonstrated and compared by two-dimensional simulated analysis. As compared with the traditional InP/InGaAs DCFET, the GaAsSb/InGaAs DCFET exhibits a higher drain current of 8.05 mA, a higher transconductance of 216.24 mS/mm, and a lower gate turn-on voltage of 0.25 V for the presence of a relatively large conduction band discontinuity (ΔE{sub c} ≈ 0.4 eV) at GaAsSb/InGaAs heterostructure and the formation of two-dimensional electron gas in the n{sup +}-InGaAs doping channel. However, due to the tunneling effect under large gate-to-source bias, it results in considerably large gate leakage current in the GaAsSb/InGaAs DCFET.

  18. Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

    NASA Technical Reports Server (NTRS)

    Henderson, R. H.; Sun, D.; Towe, E.

    1995-01-01

    The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

  19. In-plane anisotropic converse magnetoelectric coupling effect in FeGa/polyvinylidene fluoride heterostructure films

    NASA Astrophysics Data System (ADS)

    Zuo, Zhenghu; Zhan, Qingfeng; Dai, Guohong; Chen, Bin; Zhang, Xiaoshan; Yang, Huali; Liu, Yiwei; Li, Run-Wei

    2013-05-01

    We investigated the converse magnetoelectric (CME) effect in the Fe81Ga19/polyvinylidene fluoride (PVDF) heterostructure films. A weak in-plane uniaxial magnetic anisotropy was observed in the as-deposited magnetostrictive FeGa films. When a positive (negative) electric field is applied on the ferroelectric PVDF substrates, both the coercivity and the squareness of magnetic hysteresis loops of FeGa films for the magnetic field parallel to the easy axis become larger (smaller), but for the magnetic field parallel to the hard axis the coercivity and the remanence get smaller (larger), indicating an anisotropic CME effect in FeGa/PVDF heterostructure films.

  20. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  1. The role of unintentional hydrogen on magnetic properties of Co doped ZnO

    NASA Astrophysics Data System (ADS)

    Assadi, M. H. N.; Zhang, Y. B.; Li, S.

    2011-12-01

    The correlation between the positioning of hydrogen and magnetic properties of Co doped ZnO are investigated using ab initio methodology. It is found that hydrogen can both sit in interstitial Zn-O mid bonds and substitute oxygen forming multicentre bonds with zinc. However the substitutional hydrogen is slightly more stable by 0.37 eV than the interstitial hydrogen. It is also found that mobile hydrogen ions in ZnO are trapped by Co ions or Co complexes to form variety of highly stable Co-H complexes in ZnO host lattice. Charge transfer from hydrogen to neighboring Co's 3d orbitals leads to both the stabilization of ferromagnetic ordering among Co ions and the reduction of Co ion magnetic moment.

  2. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  3. Mode-Locked Thulium Ytterbium Co-Doped Fiber Laser with Graphene Oxide Paper Saturable Absorber

    NASA Astrophysics Data System (ADS)

    M. Azooz, S.; W. Harun, S.; H., Ahmad; Halder, A.; C. Paul, M.; Pal, M.; K. Bhadra, S.

    2015-01-01

    A mode-locked thulium ytterbium co-doped fiber laser (TYDFL) is proposed and demonstrated by using a commercial graphene oxide (GO) paper as saturable absorber (SA). The GO paper is sandwiched between two fiber ferrules and incorporates a ring laser cavity to generate soliton pulse train operating at 1942.0nm at a threshold multimode pump power as low as 1.8 W. The mode-locked TYDFL has a repetition rate of 22.32 MHz and the calculated pulse width of 1.1 ns. Even though the SA has a low damage threshold, the easy fabrication of GO paper should promote its potential application in ultrafast photonics.

  4. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres.

    PubMed

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A; Tao, Lu; Gao, Faming

    2015-09-29

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm(-3) in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g(-1). This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

  5. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    NASA Astrophysics Data System (ADS)

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-09-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm-3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g-1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

  6. Highly piezoelectric MgZr co-doped aluminum nitride-based vibrational energy harvesters.

    PubMed

    Minh, Le Van; Hara, Motoaki; Yokoyama, Tsuyoshi; Nishihara, Tokihiro; Ueda, Masanori; Kuwano, Hiroki

    2015-11-01

    The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output power of 1.3 μW was achieved with a Q-factor of 400 when resonant frequency, vibration acceleration, load resistance were 792 Hz, 8 m/s(2), and 1.1 MΩ, respectively. Normalized power density was 8.1 kW·g(-2)·m(-3). This was one of the highest values among the currently available piezoelectric VEHs.

  7. Self-consistent GW calculation of the electronic structure of co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Kim, Maengsuk; Park, Chul Hong

    2012-01-01

    The electronic structure of Co-doped ZnO is presented using a first-principles self-consistent GW calculation based on the screened hybrid HSE06 functional and is compared to the structure calculated using the generalized gradient density approximation plus U (GGA+U) method. The obtained energy splittings between unoccupied Co t 2 and the occupied Co e states are about 3.0 eV and 5.1 eV for the GGA+U and the HSE06 calculations, respectively. Through a correction of the self-consistent GW calculations on the top of HSE06, the electronic energy levels of the occupied Co e band states are moved downward slightly while those at the unoccupied Co t 2 bands are shifted upward, and the occupied Co e and the empty Co t 2 levels of the minority spin are located, respectively, far below and far above the conduction band minimum.

  8. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  9. EPR investigation of pure and Co-doped ZnO oriented nanocrystals

    NASA Astrophysics Data System (ADS)

    Savoyant, A.; Alnoor, H.; Bertaina, S.; Nur, O.; Willander, M.

    2017-01-01

    Pure and cobalt-doped zinc oxide aligned nanorods have been grown by the low-temperature (90 °C) aqueous chemical method on amorphous ZnO seed layer, deposited on a sapphire substrate. High crystallinity of these objects is demonstrated by the electron paramagnetic resonance investigation at liquid helium temperature. The successful incorporation of Co2+ ions in substitution of Zn2+ ones in the ZnO matrix has also been confirmed. A drastic reduction of intrinsic ZnO nanorods core defects is observed in the Co-doped samples, which enhances the structural quality of the NRs. The quantification of substitutional Co2+ ions in the ZnO matrix is achieved by comparison with a reference sample. The findings in this study indicate the potential of using the low-temperature aqueous chemical approach for synthesizing material for spintronics applications.

  10. Co-doped sodium chloride crystals exposed to different irradiation temperature

    SciTech Connect

    Ortiz-Morales, A.; Cruz-Zaragoza, E.; Furetta, C.; Kitis, G.; Flores J, C.; Hernandez A, J.; Murrieta S, H.

    2013-07-03

    Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of the dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.

  11. Characterization of CdZnTe co-doped with indium and lead

    NASA Astrophysics Data System (ADS)

    Zaman, Yasir; Jie, Wanqi; Wang, Tao; He, Yihui; Xu, Lingyan; Guo, Rongrong; Xu, Yadong; Zha, Gangqiang

    2015-01-01

    Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44×10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

  12. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    PubMed Central

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-01-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm−3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g−1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems. PMID:26415838

  13. Local fields in Co and Mn Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Sato, W.; Kano, Y.; Suzuki, T.; Nakagawa, M.; Kobayashi, Y.

    2016-12-01

    The magnetic properties of ZnO co-doped with 5 at. % Co and 5 at. % Mn(Zn0.90Co0.05Mn0.05O) synthesized by a solid-state reaction were investigated by means of 57Co emission Mössbauer spectroscopy. The majority of the probe ions (80 %) residing in defect-free substitutional Zn sites take the oxidation state of 57Fe 2+, and the others presumably form local defects taking the state of 57Fe 3+ at room temperature. Both components show doublets, and RT ferromagnetism was thus absent in the sample. For the measurement at 10 K, spectral broadening was observed, implying a possible presence of a weak magnetic component.

  14. Sulfur and nitrogen co-doped carbon dots sensors for nitric oxide fluorescence quantification.

    PubMed

    Simões, Eliana F C; Leitão, João M M; Esteves da Silva, Joaquim C G

    2017-04-01

    Microwave synthetized sulfur and nitrogen co-doped carbon dots responded selectively to nitric oxide (NO) at pH 7. Citric acid, urea and sodium thiosulfate in the proportion of 1:1:3 were used respectively as carbon, nitrogen and sulfur sources in the carbon dots microwave synthesis. For this synthesis, the three compounds were diluted in 15 mL of water and exposed for 5 min to a microwave radiation of 700 W. It is observed that the main factor contributing to the increased sensitivity and selectivity response to NO at pH 7 is the sodium thiosulfate used as sulfur source. A linear response range from 1 to 25 μM with a sensitivity of 16 μM(-1) and a detection limit of 0.3 μM were obtained. The NO quantification capability was assessed in standard and in fortified serum solutions.

  15. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    PubMed Central

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg−1, a high reversible specific capacity of 1055.20 mAhg−1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg−1 when cycled at the current density of 1000 mAg−1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  16. Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.

    PubMed

    Baldoví, Hermenegildo G; Albarracín, Ferran; Álvaro, Mercedes; Ferrer, Belén; García, Hermenegildo

    2015-07-20

    A series of (N, O)-co-doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conduction-band potential and charge-separation quantum yield increase, whereas the charge-separation lifetime decreases.

  17. Structure Evolution of BaTiO3 on Co Doping: X-ray diffraction and Raman study

    NASA Astrophysics Data System (ADS)

    Mansuri, Amantulla; Mishra, Ashutosh

    2016-10-01

    In the present study, we have synthesize polycrystalline samples of BaTi1-xCoxO3 (x = 0, 0.05 and 0.1) with standard solid state reaction technique. The obtained samples are characterized by X-ray diffraction (XRD) and Raman spectroscopy. The detail structural analysis has been performed by Rietveld refinement using Fullprof program. The structural analysis reveal the samples are chemical pure and crystallize in tetragonal phase with space group Pm3m. We observe an increase in lattice parameters which results due to substitution of Co2+ with large ionic radii (0.9) for smaller ionic radii (0.6) Ti4+. Moreover peak at 45.5° shift to 45° on Co doping, which is due to structure phase transition from tetragonal to cubic. Raman study infers that the intensity of characteristic peaks decreases and linewidth increases with Co doping. The bands linked with the tetragonal structure (307 cm1) decreased due to the tetragonal-towards-cubic phase transition with Co doping. Our structural study reveals the expansion of BTO unit cell and tetragonal-to-cubic phase transformation takes place, results from different characterization techniques are conclusive and show structural evolution with Co doping.

  18. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    NASA Astrophysics Data System (ADS)

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-06-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg‑1, a high reversible specific capacity of 1055.20 mAhg‑1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg‑1 when cycled at the current density of 1000 mAg‑1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries.

  19. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance.

    PubMed

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-06-14

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg(-1), a high reversible specific capacity of 1055.20 mAhg(-1) after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg(-1) when cycled at the current density of 1000 mAg(-1), indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries.

  20. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I.; Kuo, Hao-Chung

    2014-12-01

    In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standard deviation (STD), indicating that the UV-LED epi-wafer of low curvature and MQWs of weak quantum-confined Stark effect (QCSE) were grown. High-resolution X-ray diffraction (HRXRD) analyses demonstrated high-order satellite peaks and clear fringes between them for the UV-LEDs grown on the FS-GaN substrate, from which the interface roughness (IRN) was estimated. The temperature-dependent photoluminescence (PL) measurement confirmed that the UV-LEDs grown on the FS-GaN substrate exhibited better carrier confinement. Besides, the high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) mapping images verified that the UV-LEDs on FS-GaN have fairly uniform distribution of indium and more ordered InGaN/AlInGaN MQW structure. Clearly, the FS-GaN can not only improve the light output power but also reduce the efficiency droop phenomenon at high injection current. Based on the results mentioned above, the FS-GaN can offer UV-LEDs based on InGaN/AlInGaN MQW structures with benefits, such as high crystal quality and small carrier localization degree, compared with the UV-LEDs on sapphire.

  1. Investigations on luminescence behavior of Er3+/Yb3+ co-doped boro-tellurite glasses

    NASA Astrophysics Data System (ADS)

    Maheshvaran, K.; Arunkumar, S.; Venkata Krishnaiah, K.; Marimuthu, K.

    2015-01-01

    Er3+/Yb3+ co-doped boro-tellurite glasses with the chemical composition 30TeO2+(24 - x)B2O3 + 15SrO + 10BaO + 10Li2O + 10LiF + 1Er2O3 + xYb2O3 (where x = 0, 0.1, 0.5, 1 and 2 in wt%) have been prepared and their luminescence behavior were studied and reported. Absorption spectral measurements have been used to derive the Judd-Ofelt (JO) intensity parameters from the experimental and calculated oscillator strength values following the JO theory. The various lasing parameters such as stimulated emission cross-section (σEp), experimental and calculated branching ratios (βR) and radiative lifetime (τcal) for the 2H9/2 → 4I15/2, 4S3/2 → 4I15/2 and 4I13/2 → 4I15/2 emission transitions were determined using the JO intensity parameters. The absorption and emission cross-section values for the 4I13/2 → 4I15/2 emission band have been calculated using McCumbar theory and the Gain cross-section for the 4I13/2 → 4I15/2 emission transition also obtained. The upconversion emission mechanism have been studied through various energy transfer processes and the intensity of the upconversion emission transitions are found to increase with the increase in Yb3+ ion concentration. The luminescence decay curves corresponding to the 4I13/2 → 4I15/2 transition of the Er3+/Yb3+ co-doped boro-tellurite glasses under 980 nm excitation wavelength have also been studied and reported in the present work.

  2. Temperature dependence anomalous dielectric relaxation in Co doped ZnO nanoparticles

    SciTech Connect

    Ansari, Sajid Ali; Nisar, Ambreen; Fatma, Bushara; Khan, Wasi; Chaman, M.; Azam, Ameer; Naqvi, A.H.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► We prepared Co doped ZnO by facile gel-combustion method. ► Studied temperature dependent dielectric properties in detail. ► Relaxation time shifts toward the higher temperature as increase in Co content. ► SEM analysis shows formation and agglomeration of nanoparticles. ► Dielectric constants, loss and ac conductivity increases with rise in temperature. ► The dielectric constant, loss and ac conductivity decreases as Co ion increases. -- Abstract: We have reported temperature and frequency dependence of dielectric behavior of nanocrystalline Zn{sub 1−x}Co{sub x}O (x = 0.0, 0.01, 0.05 and 0.1) samples prepared by gel-combustion method. The synthesized samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and LCR-meter, respectively. The XRD analysis reveals that ZnO has a hexagonal (wurtzite) crystal structure. The morphology and size of the nanoparticles (∼10–25 nm) were observed by SEM for 5% Co doped ZnO sample. In dielectric properties, complex permittivity (ε{sup *} = ε′ − jε″), loss tangent (tan δ) and ac conductivity (σ{sub ac}) in the frequency range 75 kHz to 5 MHz were analyzed with temperature range 150–400 °C. The experimental results indicate that ε′, ε″, tan δ and σ{sub ac} decreases with increase in frequency and temperature. The transition temperature as obtained in dispersion curve of dielectric constant shifts toward higher temperature with increase Co content.

  3. Raman-scattering probe of anharmonic effects in GaAs

    NASA Astrophysics Data System (ADS)

    Verma, Prabhat; Abbi, S. C.; Jain, K. P.

    1995-06-01

    A comparative study of anharmonic effects in various structural forms of GaAs, namely crystalline, disordered and ion-implanted, and pulse laser annealed (PLA), using temperature-dependent Raman scattering, is reported for various phonon modes over the temperature range 10-300 K. The disordered and PLA samples are found to have greater anharmonicity than crystalline GaAs. The localized vibrational mode in PLA GaAs shows shorter relaxation time than the LO-phonon mode.

  4. Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Choi, Kyoung Jin; Moon, Jae Kyoung; Park, Min; Kim, Haechon; Lee, Jong-Lam

    2002-05-01

    Effects of photowashing treatment on gate leakage current (IGD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of IGD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of IGD.

  5. Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.

    2017-01-01

    The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing impurity modes in a modified random-element isodisplacement model. Based on the dielectric continuous model, the uniaxial model, and the Lei-Ting balance equation, the effects of the two-mode property on electrostatic potentials of interface optical and confined optical phonons in AlGaN/GaN quantum wells, as well as their influences on the electronic mobility (EM), are discussed by a component-dependent weight model. Our results indicate that the total EM decreases to a minimum at first and then increases slowly with x under the influences of the competitions from the eight branches of phonons. The further calculation shows that the total EM decreases with the increment of temperature in the range of 200 K < T < 400 K and reduction of well width d. As a comparison, the EM is calculated for an Al0.58Ga0.42N/GaN quantum well at room temperature, and our result is 1263.0 cm2/Vs, which is 1.44 times of the experiment value. Our result is expected since the difference between our theory and the experiment is mainly due to the neglect of interface-roughness and other secondary scattering mechanisms. Consequently, the two-mode property of bulk TO phonons in ternary mixed crystals does affect obviously on the electron transport in the quantum wells. And our component-dependent weight model could be extended to study the electric properties influenced by optical phonons in other related heterostructures.

  6. Tm3+/Yb3+ co-doped tellurite glass with silver nanoparticles for 1.85 μm band laser material

    NASA Astrophysics Data System (ADS)

    Huang, Bo; Zhou, Yaxun; Cheng, Pan; Zhou, Zizhong; Li, Jun; Jin, Wei

    2016-10-01

    Tm3+/Yb3+ co-doped tellurite glasses with different silver nanoparticles (Ag NPs) concentrations were prepared using the conventional melt-quenching technique and characterized by the UV/Vis/NIR absorption spectra, 1.85 μm band fluorescence emission spectra, transmission electron microscopy (TEM) images, differential scanning calorimeter (DSC) curves and X-ray diffraction (XRD) patterns to investigate the effects of Ag NPs on the 1.85 μm band spectroscopic properties of Tm3+ ions, thermal stability and structural nature of glass hosts. Under the excitation of 980 nm laser diode (LD), the 1.85 μm band fluorescence emission of Tm3+ ions enhances significantly in the presence of Ag NPs with average diameter of ∼8 nm and local surface Plasmon resonance (LSPR) band of ∼590 nm, which is mainly attributed to the increased local electric field induced by Ag NPs at the proximity of doped rare-earth ions on the basis of energy transfer from Yb3+ to Tm3+ ions. An improvement by about 110% of fluorescence intensity is observed in the Tm3+/Yb3+ co-doped tellurite glass containing 0.5 mol% amount of AgNO3 while the prepared glass samples possess good thermal stability and amorphous structural nature. Meanwhile, the Judd-Ofelt intensity parameters Ωt (t = 2,4,6), spontaneous radiative transition probabilities, fluorescence branching ratios and radiative lifetimes of relevant excited levels of Tm3+ ions were determined based on the Judd-Ofelt theory to reveal the enhanced effects of Ag NPs on the 1.85 μm band spectroscopic properties, and the energy transfer micro-parameters and phonon contribution ratios were calculated based on the non-resonant energy transfer theory to elucidate the energy transfer mechanism between Yb3+ and Tm3+ ions. The present results indicate that the prepared Tm3+/Yb3+ co-doped tellurite glass with an appropriate amount of Ag NPs is a promising lasing media applied for 1.85 μm band solid-state lasers and amplifiers.

  7. Multimodal emissions from Tb3+/Yb3+ co-doped lithium borate glass: Upconversion, downshifting and quantum cutting

    NASA Astrophysics Data System (ADS)

    Bahadur, A.; Yadav, R. S.; Yadav, R. V.; Rai, S. B.

    2017-02-01

    This paper reports the optical properties of Tb3+/Yb3+ co-doped lithium borate (LB) glass prepared by melt quench method. The absorption spectrum of the Yb3+ doped LB glass contains intense NIR band centered at 976 nm due to 2F7/2→2F5/2 transition. The emission spectra of the prepared glasses have been monitored on excitation with 266, 355 and 976 nm. The Yb3+ doped glass emits a broad NIR band centered at 976 nm whereas the Tb3+ doped glass gives off visible bands on excitations with 266 and 355 nm. When the Tb3+ and Yb3+ ions are co-doped together, the emission intensity in the visible region decreases whereas it increases in the NIR region significantly. The increase in the emission intensity in the NIR region is due to efficient cooperative energy transfer (CET) from Tb3+ to Yb3+ ions. The quantum cutting efficiency for Tb3+/Yb3+ co-doped glass has been calculated and compared for 266 and 355 nm excitations. The quantum cutting efficiency is larger for 355 nm excitation (137%). The Tb3+/Yb3+ co-doped LB glass also emits upconverted visible bands on excitation with 976 nm. The mechanisms involved in the energy transfer have been discussed using schematic energy level diagram. The Tb3+/Yb3+ co-doped LB glass may be used in the optical devices and in solar cell for solar spectral conversion and behaves as a multi-modal photo-luminescent material.

  8. The effect of surface cleaning on quantum efficiency in AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    Hao, Guanghui; Zhang, Yijun; Jin, Muchun; Feng, Cheng; Chen, Xinlong; Chang, Benkang

    2015-01-01

    To improve the quantum efficiency of AlGaN photocathode, various surfaces cleaning techniques for the removal of alumina and carbon from AlGaN photocathode surface were investigated. The atomic compositions of AlGaN photocathode structure and surface were measured by the X-ray photoelectron spectroscopy and Ar+ ion sputtering. It is found that the boiling KOH solution and the mixture of sulfuric acid and hydrogen peroxide, coupled with the thermal cleaning at 850 °C can effectively remove the alumina and carbon from the AlGaN photocathode surface. The quantum efficiency of AlGaN photocathode is improved to 35.1% at 240 nm, an increase of 50% over the AlGaN photocathode chemically cleaned by only the mixed solution of sulfuric acid and hydrogen peroxide and thermally cleaned at 710 °C.

  9. Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.

    PubMed

    Han, Chang Bao; He, Chuan; Meng, Xiao Bo; Wan, Ya Rui; Tian, Yong Tao; Zhang, Ying Jiu; Li, Xin Jian

    2012-02-27

    A GaN/Si nanoheterostructure array was prepared by growing GaN nanostructures on silicon nanoporous pillar array (Si-NPA). Based on as-grown and annealed GaN/Si-NPA, two light-emitting diodes (LEDs) were fabricated. It was found that after the annealing treatment, both the turn-on voltage and the leakage current density of the nanoheterostructure varied greatly, together with the electroluminescence (EL) changed from a yellow band to a near infrared band. The EL variation was attributed to the radiative transition being transformed from a defect-related recombination in GaN to an interfacial recombination of GaN/Si-NPA. Ours might have provided an effective approach for fabricating GaN/Si-based LEDs with different emission wavelengths.

  10. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    NASA Astrophysics Data System (ADS)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  11. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    SciTech Connect

    Simimol, A.; Anappara, Aji A.; Greulich-Weber, S.; Chowdhury, Prasanta; Barshilia, Harish C.

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  12. X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

    NASA Astrophysics Data System (ADS)

    Massies, J.; Contour, J. P.

    1985-06-01

    X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10-20 Å h-1. In contrast, when the GaAs surface is treated in dynamic conditions (running water), no oxide buildup is observed. Moreover, running water can remove the oxide film formed in static conditions, as well as oxidized layers due to air exposure. These results are discussed in the framework of cleaning prior to molecular beam epitaxy.

  13. Effect of the V{sub As}V{sub Ga} complex defect doping on properties of the semi-insulating GaAs

    SciTech Connect

    Ma, Deming Qiao, Hongbo; Shi, Wei; Li, Enling

    2014-04-21

    The different position V{sub As}V{sub Ga} cluster defect doping in semi-insulating (SI) GaAs has been studied by first-principles calculation based on hybrid density functional theory. Our calculated results show that EL6 level is formed due to the V{sub As}V{sub Ga} complex defect, which is very close to the experimental result. It provides the explanation of the absorption of laser with the wavelength beyond in semi-insulating GaAs. The formation energy of V{sub As}V{sub Ga} complex defect is found to decrease from surface to interior gradually. The conduction band minima and valence band maxima of GaAs (001) surface with the V{sub As}V{sub Ga} complex defect are all located at Γ point, and some defect levels are produced in the forbidden band. In contrast, the conduction band minima and valence band maxima of GaAs with the interior V{sub As}V{sub Ga} complex defect are not located at the same k-point, so it might involve the change of momentum in the electron transition process. The research will help strengthen the understanding of photoelectronic properties and effectively guide the preparation of the SI-GaAs materials.

  14. Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures

    SciTech Connect

    Yakimov, E. B.; Vergeles, P. S.; Polyakov, A. Y.; Jeon, Dae-Woo; Lee, In-Hwan

    2014-02-21

    The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm{sup 2}. It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.

  15. Effect on Sb on the Properties of GaInP Top Cells: Preprint

    SciTech Connect

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01

    It is well known that the efficiency of GaInP/GaAs tandem solar cells is limited by the band gap of the GaInP top cell, which, in turn, is determined by the degree of compositional ordering in GaInP base layer. Attempts to raise the band gap by the addition of Al to the top cell have met with limited success due to the strong affinity between Al and oxygen. Here we investigate a different approach. It has been shown that the presence of antimony on the surface of GaInP during its growth suppresses the ordering process and increases the band gap. In this paper, we study the effects of Sb on the properties of GaInP top cells. We show that, in addition to raising the band gap of GaInP, it also increases the incorporation of Zn and changes the relative incorporation of Ga and In. These effects depend strongly on the substrate orientation, growth temperature and rate, and the Sb/P ratio in the gas phase. We show that the band gap of the GaInP top cell (and the Voc) can be increased without reducing the minority carrier collection efficiency. The implications of these results are presented and discussed.

  16. Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency

    NASA Astrophysics Data System (ADS)

    Yang, Lin'an; Mao, Wei; Yao, Qingyang; Liu, Qi; Zhang, Xuhu; Zhang, Jincheng; Hao, Yue

    2011-01-01

    The wurtzite AlGaN/GaN Gunn diode with tristep-graded Al composition AlGaN as hot electron injector is simulated by using an improved negative differential mobility model of GaN. The results show that the oscillation mode of Gunn diode gradually shifts from dipole domain mode toward accumulation mode with increase in temperature, and the mode shift closely depends on the injector length. At the temperatures of 300-400 K, 0.6 and 0.4 μm Gunn diodes normally generate the oscillation of dipole domain mode, yielding the fundamental oscillation frequencies of 332-352 GHz and 488-508 GHz, respectively, with the dc/rf conversion efficiencies of 2%-3% and the output power densities of 109-1010 W cm-3. At higher temperatures, the diodes generate the accumulation mode oscillation, and the highest frequency approaches 680 GHz and 977 GHz, respectively, with the dc/rf conversion efficiencies of 0.5%-1%.

  17. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  18. Synergy of metal and nonmetal dopants for visible-light photocatalysis: a case-study of Sn and N co-doped TiO2.

    PubMed

    Zhuang, Huaqiang; Zhang, Yingguang; Chu, Zhenwei; Long, Jinlin; An, Xiaohan; Zhang, Hongwen; Lin, Huaxiang; Zhang, Zizhong; Wang, Xuxu

    2016-04-14

    This paper mainly focuses on the synergistic effect of Sn and N dopants to enhance the photocatalytic performance of anatase TiO2 under visible light or simulated solar light irradiation. The Sn and N co-doped TiO2 (SNT-x) photocatalysts were successfully prepared by the facile sol-gel method and the post-nitridation route in the temperature range of 400-550 °C. All the as-prepared samples were characterized in detail by X-ray diffraction, UV-vis diffuse reflectance spectroscopy, transmission electron microscopy, X-ray photoelectron and electron spin resonance spectroscopy and photoelectrochemical measurements. The characterization results reveal that the co-incorporation of Sn and N atoms remarkably modifies the electronic structure of TiO2, which gives rise to a prominent separation of photogenerated charge carriers and more efficient interfacial charge-transfer reactions in a photocatalytic process. The enhanced photocatalytic activity is attributed to the intensified active oxygen species including hydroxyl radicals (˙OH) and superoxide anion radicals (O2˙(-)) for degradation of organic pollutants. And the result of photocatalytic hydrogen production further confirms the existence of the synergistic effect in the SNT-x samples, because they exhibit higher photocatalytic activity than the sum of N/TiO2 and Sn/TiO2. This work provides a paradigm to consolidate the understanding of the synergistic effect of metal and non-metal co-doped TiO2 in domains of photocatalysis and photoelectrochemistry.

  19. Plasmon enhanced energy-transfer up-conversion in Yb3+-Er3+ co-doped LiNbO3 crystal

    NASA Astrophysics Data System (ADS)

    Hernández-Pinilla, D.; Molina, P.; Plaza, J. L.; Bausá, L. E.; Ramírez, M. O.

    2017-01-01

    We have analyzed the effect of linear chains of metallic Ag nanoparticles on the optical properties of a periodically poled Yb3+-Er3+ co-doped LiNbO3 crystal. By exploiting the broad plasmonic response supported by linear chains of strongly coupled Ag nanoparticles, we demonstrate a 50% of enhancement of the up-converted Er3+ emission under excitation in the f-f transition of Yb3+ ions. The observed intensification is explained in terms of the broad plasmonic spectral response supported by the Ag chains, which overlaps both the Er3+ visible emissions and the Yb3+ absorption band, and the two-photon character of the Yb3+ → Er3+ energy-transfer up-conversion process. The results are of interest for applications involving luminescence up-conversion such as sensing, solar energy conversion, biological imaging or solid-state nanolasers.

  20. Highly efficient Yb3+/Tm3+ co-doped NaYF4 nanotubes: Synthesis and intense ultraviolet to infrared up-conversion luminescence

    NASA Astrophysics Data System (ADS)

    Zhang, Y. Y.; Wang, Y.; Deng, J. Q.; Wang, J.; Ni, S. C.

    2014-02-01

    Nanocrystals of up-conversion (UC) phosphor Yb3+/Tm3+ co-doped NaYF4 are prepared by a facile hydrothermal method using oleic acid as a stabilizing agent. The as-prepared nanocrystals are of hexagonal phase, and have tube-like morphology and strong ultraviolet (UV) and blue UC fluorescence intensity, which have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and luminescence spectroscopy. The effect of Yb3+ concentration on the UC emission properties is also analyzed. Our results reveal that the intensity of emission peaks can be controlled by varying the Yb3+ concentration and these NaYF4 nanotubes are highly efficient host material. The as-prepared NaYF4 nanotubes show potential applications in UV compact solid state lasers and multi-channel fluorescent label.

  1. Modification on upconversion luminescence of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets through interaction between nanohost and doping lanthanide

    NASA Astrophysics Data System (ADS)

    Xu, Zuyuan; Li, Yongjin; Song, Yapai; Zhang, Xiangzhou; Hu, Rui; Qiu, Jianbei; Yang, Zhengwen; Song, Zhiguo

    2017-04-01

    We reported the upconversion luminescence (UCL) properties of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets synthesized by hydrothermal method. Under 980 nm excitation, the red and green UCL of Er3 + ions were observed to be populated by a four and three-photon process in the case of absent or low concentration Yb3 + dopant. However, an increase of Yb3 + dopants show a completely opposite effect on the emission intensity of red and green one, accompanying with the change of upconverting process. It indicates that the red-shifting absorption edge of semiconductor and the super saturation UC processes involved with Yb3 + and Er3 + doping in BiOCl semiconductor nanosheets, respectively, are mainly responsible for the above UC phenomena.

  2. Radiation effects in GaN devices and materials (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Sun, Ke-Xun; Nelson, Ron; Yeamans, Charles

    2016-10-01

    Gallium Nitride (GaN) is a wide-bandgap semiconductor having excellent radiation properties. GaN crystal is ionic-covalent with significant iconicity resulting in stronger molecular bond strength, which in in turn leads to excellent radiation hardness. Further, GaN has ultrafast carrier relaxation time. GaN transistors are promising for high-frequency applications due to their large bandgap (3.9eV) and higher breakdown field (<5MV/cm). These exceptional characteristics make GaN suitable to operate in high radiation flux environment such as fusion plasma facilities, for ultrafast detection. The expected detector temporal response is faster than 0.01-1 ns. We have been systematically testing neutron radiation effects in GaN devices and materials at Los Alamos Neutron Science Center (LANSCE) with ever increased neutron fluence levels, and at National Ignition Facility (NIF) high foot, high yield shots. In 2013 LANSCE run cycle, we tested GaN UV LED devices at 3.1E11 neutrons/cm^2. In 2015-2016 LANSCE run cycles, we have been operating three neutron beam lines with fluence level 1.2E11, 1.5E13, and 1E15 neutrons/cm^2. The irradiated samples include GaN UV LEDs, GaN HEMTs, and GaN substrates. In the experiments up to 2015 run cycle, we have characterized electrical and optical performances of GaN device before and after neutron irradiation, including the device IV curve measurements monitored at over the three months neutron irradiation time, and device IV curve measurements before and after NIF high yield shot irradiation. We observed no substantial degradation. These experiments firmly established GaN devices as the radiation hard platform of the next generation fusion plasma diagnostic instruments.

  3. AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Seo, Sanghyun; Ghose, Kaustav; Zhao, Guang Yuan; Pavlidis, Dimitris

    AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1μm gate length and 200μm gate width showed a maximum drain current density of ˜380mA/mm and a peak extrinsic transconductance of 85mS/mm. S-parameter measurements showed that currentgain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 5.85GHz and 10.57GHz, respectively. Power characteristics were measured at 2GHz and showed output power density of 850mW/mm with 23.8% PAE at VDS=15V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.

  4. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.

  5. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Baykan, Mehmet Onur

    Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width

  6. Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Zhu, L. P.; Liu, Y.; Jiang, C. Y.; Qin, X. D.; Li, Y.; Gao, H. S.; Chen, Y. H.

    2014-02-01

    The excitation wavelength dependence of the anomalous circular photogalvanic effect (ACPGE) current arising from the reciprocal spin Hall effect (RSHE) in undoped InGaAs/AlGaAs quantum wells is measured under normal incidence of circularly polarized light at room temperature. We found that the spot location with the maximum ACPGE current is wavelength independent. And the normalized ACPGE current decreases at smaller wavelengths, which can be attributed to the sharp decrease of the spin relaxation time (τs) and the hot electron relaxation time (τ1) at smaller wavelengths. The study of the excitation wavelength dependence of ACPGE current is a good supplement to the in-depth investigation of RSHE.

  7. Room temperature dielectric and magnetic properties of Gd and Ti co-doped BiFeO{sub 3} ceramics

    SciTech Connect

    Basith, M. A. E-mail: arima@yz.yamagata-u.ac.jp; Kurni, O.; Alam, M. S.; Sinha, B. L.; Ahmmad, Bashir E-mail: arima@yz.yamagata-u.ac.jp

    2014-01-14

    Room temperature dielectric and magnetic properties of BiFeO{sub 3} samples, co-doped with magnetic Gd and non-magnetic Ti in place of Bi and Fe, respectively, were reported. The nominal compositions of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics were synthesized by conventional solid state reaction technique. X-ray diffraction patterns revealed that the substitution of Fe by Ti induces a phase transition from rhombohedral to orthorhombic at x > 0.20. Morphological studies demonstrated that the average grain size was reduced from ∼1.5 μm to ∼200 nm with the increase in Ti content. Due to Ti substitution, the dielectric constant was stable over a wide range of high frequencies (30 kHz to 20 MHz) by suppressing the dispersion at low frequencies. The dielectric properties of the compounds are associated with their improved morphologies and reduced leakage current densities probably due to the lower concentration of oxygen vacancies in the compositions. Magnetic properties of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics measured at room temperature were enhanced with Ti substitution up to 20% compared to that of pure BiFeO{sub 3} and Ti undoped Bi{sub 0.9}Gd{sub 0.1}FeO{sub 3} samples. The enhanced magnetic properties might be attributed to the substitution induced suppression of spiral spin structure of BiFeO{sub 3}. An asymmetric shifts both in the field and magnetization axes of magnetization versus magnetic field curves was observed. This indicates the presence of exchange bias effect in these compounds notably at room temperature.

  8. Self-organized vanadium and nitrogen co-doped titania nanotube arrays with enhanced photocatalytic reduction of CO2 into CH4

    PubMed Central

    2014-01-01

    Self-organized V-N co-doped TiO2 nanotube arrays (TNAs) with various doping amount were synthesized by anodizing in association with hydrothermal treatment. Impacts of V-N co-doping on the morphologies, phase structures, and photoelectrochemical properties of the TNAs films were thoroughly investigated. The co-doped TiO2 photocatalysts show remarkably enhanced photocatalytic activity for the CO2 photoreduction to methane under ultraviolet illumination. The mechanism of the enhanced photocatalytic activity is discussed in detail. PMID:24948893

  9. Energetics of CO oxidation on lanthanide-free perovskite systems: the case of Co-doped SrTiO3.

    PubMed

    Carlotto, Silvia; Natile, Marta Maria; Glisenti, Antonella; Paul, Jean-François; Blanck, Dimitri; Vittadini, Andrea

    2016-12-07

    The energetics of the catalytic oxidation of CO on a complex metal oxide are investigated for the first time via density functional theory calculations. The catalyst, Co-doped SrTiO3, is modelled using periodically repeated slabs based on the SrTiO3(100) surface. The comparison of the energy profiles obtained for the pure host and the Co-doped material reveals the actual pathway followed by the reaction, and shows that Co doping enhances the catalytic properties of SrTiO3 by reducing the energy cost for the formation of oxygen vacancies.

  10. Effect of thermal neutrons on emission characteristics of InGaAs/AlGaAs heterolasers

    SciTech Connect

    Makhsudov, B I

    2015-03-31

    It is studied how the threshold current of InGaAs/AlGaAs quantum-well injection heterolasers emitting near the wavelength λ = 0.7 μm changes under irradiation by thermal neutrons. It is found that the threshold pump current decreases at small doses (10{sup -2} neutron cm{sup -2}), while doses exceeding 6 × 10{sup 7} neutron cm{sup -2} cause an increase in this current and degradation of the structure. It is found that the main reasons for an increase in the threshold current at high irradiation doses are the nuclear reactions of the {sub 49}In{sup 115} (n, γ) → {sub 49}In{sup 116} type and the β-decay of the {sub 49}In{sup 116} isotope, which results in the appearance of {sub 50}Sn{sup 116} atoms. (lasers)

  11. Microwave-Assisted Synthesis of Boron and Nitrogen co-doped Reduced Graphene Oxide for the Protection of Electromagnetic Radiation in Ku-Band.

    PubMed

    Umrao, Sima; Gupta, Tejendra K; Kumar, Shiv; Singh, Vijay K; Sultania, Manish K; Jung, Jung Hwan; Oh, Il-Kwon; Srivastava, Anchal

    2015-09-09

    The electromagnetic interference (EMI) shielding of reduced graphene oxide (MRG), B-doped MRG (B-MRG), N-doped MRG (N-MRG), and B-N co-doped MRG (B-N-MRG) have been studied in the Ku-band frequency range (12.8-18 GHz). We have developed a green, fast, and cost-effective microwave assisted route for synthesis of doped MRG. B-N-MRG shows high electrical conductivity in comparison to MRG, B-MRG and N-MRG, which results better electromagnetic interference (EMI) shielding ability. The co-doping of B and N significantly enhances the electrical conductivity of MRG from 21.4 to 124.4 Sm(-1) because N introduces electrons and B provides holes in the system and may form a nanojunction inside the material. Their temperature-dependent electrical conductivity follows 2D-variable range hopping (2D-VRH) and Efros-Shklovskii-VRH (ES-VRH) conduction model in a low temperature range (T<50 K). The spatial configuration of MRG after doping of B and N enhances the space charge polarization, natural resonance, dielectric polarization, and trapping of EM waves by internal reflection leading to a high EMI shielding of -42 dB (∼99.99% attenuation) compared to undoped MRG (-28 dB) at a critical thickness of 1.2 mm. Results suggest that the B-N-MRG has great potential as a candidate for a new type of EMI shielding material useful in aircraft, defense industries, communication systems, and stealth technology.

  12. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    NASA Astrophysics Data System (ADS)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  13. Formation of hydroxyl radicals and kinetic study of 2-chlorophenol photocatalytic oxidation using C-doped TiO2, N-doped TiO2, and C,N Co-doped TiO2 under visible light.

    PubMed

    Ananpattarachai, Jirapat; Seraphin, Supapan; Kajitvichyanukul, Puangrat

    2016-02-01

    This work reports on synthesis, characterization, adsorption ability, formation rate of hydroxyl radicals (OH(•)), photocatalytic oxidation kinetics, and mineralization ability of C-doped titanium dioxide (TiO2), N-doped TiO2, and C,N co-doped TiO2 prepared by the sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy were used to analyze the titania. The rate of formation of OH(•) for each type of titania was determined, and the OH-index was calculated. The kinetics of as-synthesized TiO2 catalysts in photocatalytic oxidation of 2-chlorophenol (2-CP) under visible light irradiation were evaluated. Results revealed that nitrogen was incorporated into the lattice of titania with the structure of O-Ti-N linkages in N-doped TiO2 and C,N co-doped TiO2. Carbon was joined to the Ti-O-C bond in the C-doped TiO2 and C,N co-doped TiO2. The 2-CP adsorption ability of C,N co-doped TiO2 and C-doped TiO2 originated from a layer composed of a complex carbonaceous mixture at the surface of TiO2. C,N co-doped TiO2 had highest formation rate of OH(•) and photocatalytic activity due to a synergistic effect of carbon and nitrogen co-doping. The order of photocatalytic activity per unit surface area was the same as that of the formation rate of OH(•) unit surface area in the following order: C,N co-doped TiO2 > C-doped TiO2 > N-doped TiO2 > undoped TiO2.

  14. Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Hussein, A. SH.; Ghazai, Alaa J.; Salman, Emad A.; Hassan, Z.

    2013-11-01

    This paper presents the simulated electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by using ISE TCAD software. The effects of interface traps, bulk traps and polarization charges are investigated. It was observed that the role and dynamic of traps affect the device performance which requires a precondition to calculate the DC characteristics that are in agreement with the experimental data. On the other hand, polarization charges lead to quantum confinement of the electrons in the channel and form two-dimensional electron gas. The electron quantization leads to increasing the drain current and shift in the threshold voltage. The device performance can be improved by optimizing the fixed interface charge and thus reducing the bulk traps to enhance the DC characteristics.

  15. The effect of gate length variation on InAlGaN/GaN HFET device characteristics

    NASA Astrophysics Data System (ADS)

    Ketteniss, N.; Behmenburg, H.; Lecourt, F.; Defrance, N.; Hoel, V.; De Jaeger, J. C.; Heuken, M.; Kalisch, H.; Vescan, A.

    2012-03-01

    InAlGaN/GaN heterostructure field effect transistors (HFETs) with a nearly lattice-matched barrier layer (thickness tbar = 8.3 nm) are investigated. The focus is set on resolving the systematic dependence of device characteristics on the gate length LG. Therefore, five different gate length devices with LG ranging from 75 nm to 2 µm have been realized. Peak values of 460 mS mm-1 and 100 GHz for transconductance gm and unity current gain cut-off frequency fT are obtained for the 75 nm device. DC characteristics as well as the cut-off frequency fT show systematic scaling with the gate length LG. Nevertheless, short-channel effects appear for the short gate length devices in both DC and RF operation, and a critical minimum aspect ratio LG/tbar of 27 is identified for the investigated barrier composition of xIn = 0.11; yAl = 0.63 and zGa = 0.26.

  16. Characteristics of cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction tunneling field-effect transistors

    NASA Astrophysics Data System (ADS)

    Guan, Yun-He; Li, Zun-Chao; Luo, Dong-Xu; Meng, Qing-Zhi; Zhang, Ye-Fei

    2016-10-01

    A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAs x Sb1-x /In y Ga1-y As heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAs x Sb1-x /In y Ga1-y As can improve the on-state current. In addition, the resonant TFET based on GaAs x Sb1-x /In y Ga1-y As is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176038 and 61474093), the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010103002), and the Technology Development Program of Shaanxi Province, China (Grant No. 2016GY-075).

  17. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  18. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  19. Tm3+ and Tm(3+)-Ho3+ co-doped tungsten tellurite glass single mode fiber laser.

    PubMed

    Li, Kefeng; Zhang, Guang; Wang, Xin; Hu, Lili; Kuan, Peiwen; Chen, Danping; Wang, Meng

    2012-04-23

    We investigated the ~2 μm spectroscopic and lasing performance of Tm(3+) and Tm(3+)-Ho(3+) co-doped tungsten tellurite glass single mode fibers with a commercial 800 nm laser diode. The double cladding single mode (SM) fibers were fabricated by using rod-in-tube method. The propagation loss of the fiber was ~2.5 dB/m at 1310 nm. The spectroscopic properties of the fibers were analyzed. A 494 mW laser operating at ~1.9 μm was achieved in a Tm(3+) doped 20 cm long fiber, the slope efficiency was 26%, and the laser beam quality factor M(2) was 1.09. A 35 mW ~2.1 μm laser output was also demonstrated in a 7 cm long of Tm(3+)-Ho(3+) co-doped tungsten tellurite SM fiber.

  20. Novel band gap-tunable K-Na co-doped graphitic carbon nitride prepared by molten salt method

    NASA Astrophysics Data System (ADS)

    Zhao, Jiannan; Ma, Lin; Wang, Haoying; Zhao, Yanfeng; Zhang, Jian; Hu, Shaozheng

    2015-03-01

    Novel band gap-tunable K-Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV-vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.55 eV to -0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K-Na co-doping.

  1. Fabrication and luminescence behavior of phosphate glass ceramics co-doped with Er3+ and Yb3+

    NASA Astrophysics Data System (ADS)

    Yu, Xiaochen; Duan, Li; Ni, Lei; Wang, Zhuo

    2012-08-01

    Transparent phosphate glass ceramics co-doped with Er3+ and Yb3+ in the system P2O5Li2OCaF2TiO2 were successfully synthesized by melt-quenching and subsequent heating. Formation of the nanocrystals was confirmed by X-ray powder diffraction. Judd-Ofelt analyses of Er3+ ions in the precursor glasses and glass ceramics were performed to evaluate the intensity parameters Ω2,4,6. Under 975 nm excitation, intense upconversion (UC) and infrared emission (1545 nm) were observed in the glass ceramics by efficient energy transfer from Yb3+ to Er3+. The luminescence processes were explained and the emission cross section was calculated by Fuchtbauer-Ladenburg (F-L) formula. The results confirm the potential applications of Er3+/Yb3+ co-doped glass ceramics as laser and fiber amplifier media.

  2. Enhanced visible light photocatalytic performance of g-C3N4 photocatalysts co-doped with iron and phosphorus

    NASA Astrophysics Data System (ADS)

    Hu, Shaozheng; Ma, Lin; You, Jiguang; Li, Fayun; Fan, Zhiping; Lu, Guang; Liu, Dan; Gui, Jianzhou

    2014-08-01

    Preparation of Fe and P co-doped g-C3N4 was described, using dicyandiamide monomer, ferric nitrate, and diammonium hydrogen phosphate as precursor. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, Fourier transform infrared spectra (FT-IR), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and photocurrent measurement were used to characterize the prepared catalysts. The results indicated that the addition of dopants inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, decreased the band gap energy, and restrained the recombination of photogenerated electrons and holes. Fe and P co-doped g-C3N4 exhibited much higher Rhodamine B (RhB) photodegradation rate and H2 production ability than that of single doped and neat g-C3N4 catalysts. The possible mechanism and doping sites of P and Fe were proposed.

  3. Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Zhao, Y. F.; Wang, T.; Li, H.; Li, C.

    2015-12-01

    Fe, Co, Ni, or N addition could modulate the photonic and catalytic responses of TiO2 for photocatalysts applications. Their morphologies, structures, compositions and photocatalytic performance in the degradation of methylene blue were characterized by scanning electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy, Raman spectra and X-ray photoelectron spectroscopy. The results showed that dopants affect the electronic transition energies by changing the optical band gap and the impurity absorption peaks of the specimens. Especially, co-doping enhances the visible-light photocatalytic activity of TiO2 by 4-10 times that of pure TiO2, and the Co and N co-doping derives 10-fold photocatalytic activity.

  4. Electronic, optical and photocatalytic behavior of Mn, N doped and co-doped TiO2: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Zhao, Ya Fei; Li, Can; Lu, Song; Liu, Ru Xi; Hu, Ji Yuan; Gong, Yin Yan; Niu, Leng Yuan

    2016-03-01

    The crystal phase structure, surface morphology, chemical states and optical properties of Mn, N mono-doped and co-doped TiO2 nanoparticles were investigated by X-ray powder diffractometry, Raman spectra, scanning electron microscopy, X-ray photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. Meanwhile, geometry structures, formation energies, electronic and optical properties of all systems have been also analyzed by density functional theory. The results showed that the band gap values and the carrier mobility in the valence band, conduction band and impurity levels have a synergetic influence on the visible-light absorption and photocatalytic activity of the doped TiO2. The number and the carrier mobility of impurity level jointly influence the photocatalytic activity of catalyst under visible-light. Especially, the photocatalytic activity of Mn-2N co-doped TiO2 beyond three-fold than that of pure TiO2 under visible-light.

  5. Physical structure and optical properties of Co-doped ZnO nanoparticles prepared by co-precipitation

    NASA Astrophysics Data System (ADS)

    He, Rongliang; Tang, Bin; Ton-That, Cuong; Phillips, Matthew; Tsuzuki, Takuya

    2013-11-01

    The structural and optical properties of cobalt-doped zinc oxide (Co-doped ZnO) nanoparticles have been investigated. The nanopowder with Co concentrations up to 5 at% was synthesized by a co-precipitation method. The physical structure and the chemical states of the Co-doped ZnO were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, UV-Visible reflectance and cathodoluminescence (CL) spectroscopy. The results show that cobalt ions predominantly occupy Zn2+ sites in the wurtzite crystal lattice and possess a valence state of 2+. CL analysis revealed that the incorporation of Co2+ creates a new emission band at 1.85 eV, but quenched the near-band-edge luminescence.

  6. First principles study of bismuth alloying effects in GaAs saturable absorber.

    PubMed

    Li, Dechun; Yang, Ming; Zhao, Shengzhi; Cai, Yongqing; Feng, Yuanping

    2012-05-07

    First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBi(x)As(1-x) alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

  7. High-fluence Ga-implanted silicon—The effect of annealing and cover layers

    SciTech Connect

    Fiedler, J. Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

    2014-07-14

    The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.

  8. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao

    2017-03-01

    Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was verified this enhanced effect is due to the enhanced polarization Coulomb field (PCF) scattering.

  9. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  10. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B. Kaspar, Tiffany C.; Chambers, Scott A.; Smolin, Sergey Y.; Baxter, Jason B.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  11. Boron and nitrogen co-doped porous carbon and its enhanced properties as supercapacitor

    NASA Astrophysics Data System (ADS)

    Guo, Hongliang; Gao, Qiuming

    Boron and nitrogen co-doped porous carbons (BNCs) were prepared through a facile procedure using citric acid, boric acid and nitrogen as C, B and N precursors, respectively. The BNC samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and nitrogen sorption at 77 K. Cyclic voltammetry and galvanostatic charge/discharge experiments were adopted to investigate their electrochemical behaviors. The BNC-9 and BNC-15 samples with high specific surface areas of 894 and 726 m 2 g -1 showed the large specific capacitance up to 268 and 173 F g -1, respectively, with the current of 0.1 A g -1. When the current was set as 1 A g -1, the energy densities were 3.8 and 3.0 Wh kg -1 and the power densities were 165 and 201 W kg -1 for BNC-9 and BNC-15, respectively. Thus, BNC-15 is more suitable to apply in high-power-demanded occasion, while BNC-9 tends to store more energy.

  12. Paramagnetic behavior of Co doped TiO2 nanocrystals controlled by self-purification mechanism

    NASA Astrophysics Data System (ADS)

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-01

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO2 doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO2 along with weak intensity peaks of Co3O4 for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO2 matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO2 nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co2+ ions and an increased presence of Co3O4 phase near the surface of the TiO2 nanocrystals due to self-purification mechanism.

  13. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  14. Characterization and photoluminescence of Co-doped SiC films

    SciTech Connect

    Sun, Xianke; Jin, Xin; Wang, Shiqi; Liu, Huarui; Sun, Peng; An, Yukai; Guo, Ruisong; Liu, Jiwen

    2013-11-15

    Co-doped SiC films are fabricated on Si (100) substrates by radio frequency magnetron sputtering, and the crystal structure, composition, element valences, local structure, and photoluminescence of the films are studied. Crystal structure analysis identifies the film structure as 3C-SiC and shows that the Co dopant atoms form CoSi secondary phase compounds in the films. The composition and element valence analysis show that the Co dopant atoms substituting for C sites in the SiC lattice exist in the form of Co{sup 2+} ions, and that C clusters are present in the films, which increase in amount with increasing Co dopant concentration. The analysis of local structure reveals that Co clusters, CoO and Co{sub 3}O{sub 4}, are not present in the films, and CoSi secondary phase compounds exist. All of the films show a violet photoluminescence peak located at 413 nm, which becomes stronger with increased Co dopant concentration and annealing temperature, and is found to originate from the C clusters.

  15. Paramagnetic behavior of Co doped TiO{sub 2} nanocrystals controlled by self-purification mechanism

    SciTech Connect

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-15

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO{sub 2} doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO{sub 2} along with weak intensity peaks of Co{sub 3}O{sub 4} for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO{sub 2} matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO{sub 2} nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co{sup 2+} ions and an increased presence of Co{sub 3}O{sub 4} phase near the surface of the TiO{sub 2} nanocrystals due to self-purification mechanism. - Graphical abstract: Variation of the intensity ratios of XRD peaks as a function of atomic ratio of Co. Inset: variation of structure factor for (101) reflection as a function of atomic ratio of Co. Display Omitted - Highlights: • Co doped TiO{sub 2} nanocrystals were synthesized by peroxide gel method. • HRTEM images showed Co doped TiO{sub 2} nanocrystals to be rod-like. • EPR spectra showed +2 oxidation states for Co in the samples. • Co doped TiO{sub 2} nanocrystals showed paramagnetic behavior.

  16. Robustly Single-mode Polarization Maintaining Er/Yb co-doped LMA Fiber for High Power Applications

    DTIC Science & Technology

    2007-05-08

    the fabrication of highly efficient, polarization maintaining ( PM ) LMA fibers. A PM - LMA Er/Yb co-doped fiber suitable for nanosecond pulsed...associated with fabricating LMA Er/Yb and Tm-doped fibers have previously been discussed in detail by Tankala et. al. [6]. In the case of a PM - LMA ...demonstrate a large core diameter PM Er/Yb fiber incorporating a unique raised inner-cladding which facilitates the use of conventional LMA mode selection

  17. Fabrication and laser performance of Yb3+/Al3+ co-doped photonic crystal fiber synthesized by plasma nonchemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Xia, Changming; Zhou, Guiyao; Liu, Jiantao; Wang, Chao; Han, Ying; Zhang, Wei; Yuan, Jinhui

    2015-10-01

    In this paper, the bulk Yb3+/Al3+ co-doped silica glass with 1.3 Yb2O3-2.5Al2O3-96.2SiO2 (wt%) are synthesized by plasma nonchemical vapor deposition method combining solution doping technology, where the inductively coupled plasma is used as the heat source. The influence of different O2/N2 ratios on the fluorescence properties of Yb3+/Al3+ co-doped silica glass are investigated. The large mode area photonic crystal fiber (PCF) is fabricated by using the bulk Yb3+/Al3+ co-doped silica glass as fiber core. The laser performance of Yb3+/Al3+ co-doped photonic crystal fiber is studied.

  18. Intense white light emission in Tm3+/Er3+/Yb3+ co-doped Y2O3-ZnO nano-composite

    NASA Astrophysics Data System (ADS)

    Yadav, R. S.; Verma, R. K.; Rai, S. B.

    2013-07-01

    The Tm3+/Er3+/Yb3+ co-doped Y2O3-ZnO nano-composite is synthesized using the solution combustion technique. The structural morphology is monitored using x-ray diffraction, transmission electron microscopy and scanning electron microscopy. The Yb3+/Tm3+ co-doped nano-phosphor emits intense blue as well as weak red emissions, while Yb3+/Er3+ co-doped nano-phosphor emits strong green along with red emissions on excitation with 976 nm laser. Joining these together (i.e. Tm3+/Er3+/Yb3+ co-doped phosphor) give very strong white light, which is further verified by CIE coordinates (0.32, 0.36). The addition of ZnO with Y2O3 phosphor gives further enhancement in the intensity of white light. The possible reason for this enhancement is the removal of optical quenching sites.

  19. Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

    SciTech Connect

    Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.; Sinnott, Susan B.; Mathew, Kiran; Bucholz, Eric W.; Hennig, Richard G.

    2015-09-14

    We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials for efficient spectral up-conversion devices.

  20. The effects of passivation and temperature on the strain of Al0.22Ga0.78N /GaN heterostructuers

    NASA Astrophysics Data System (ADS)

    Zhang, K. X.; Xie, H. Y.; Zhang, J. N.; Chen, D. J.; Wang, G. D.; Liu, M. Y.; Zhang, A. M.

    2008-11-01

    The temperature dependencies of c-axis strain in Al0.22Ga0.78N/GaN heterostructure, with and without Si3N4 passivation layer, were investigated at temperatures from room temperature (300K) to 813K using high resolution X-ray diffraction (HRXRD). The unpassivated Al0.22Ga0.78N layers total strain decrease is about 6% and 8% for the 50-nm- and 100-nm-thick Al0.22Ga0.78N layers, respectively, at whole temperature range from 300K to 813K in our measurements. The passivated Al0.22Ga0.78N layers total strain decrease is about 12% and 0% for the 50-nm- and 100-nm-thick Al0.22Ga0.78N layers, respectively, at the whole temperature range in our measurements. And at the common devices working temperature range, after passivating, the strain increase is about 4% and 8% of the 50-nm-thick Al0.22Ga0.78N and 100-nm-thick layers with temperature from 300K to 400K and 300K to 420K, respectively. The results indicate that a reasonable passivation layer is necessary to effectively impede strain decrease of AlxGa1-xN/GaN interface at the higher temperatures and that a passivation layer is conduce to increase c-axis strain at the working temperature range, hence passivation may improve the thermal stability and electricity characteristics of AlxGa1-xN/GaN heterostructures.

  1. Oxygen and nitrogen co-doped porous carbon nanosheets derived from Perilla frutescens for high volumetric performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Liu, Bei; Liu, Yijiang; Chen, Hongbiao; Yang, Mei; Li, Huaming

    2017-02-01

    Biomass-derived O/N-co-doped porous carbons have become the most competitive electrode materials for supercapacitors because of their renewability and sustainability. We herein present a simple approach to fabricate O/N-co-doped porous carbon nanosheets by the direct pyrolysis of Perilla frutescens (PF) leaves. Under optimum pyrolysis temperature (700 °C), the PF leaf-derived carbon nanosheets (PFC-700) having O, N contents of 18.76 at.% and 1.70 at.%, respectively, exhibit a hierarchical pore structure with a moderate BET surface area (655 m2 g-1) and a relatively low pore volume (0.44 cm3 g-1). Such O/N-co-doped porous carbon nanosheets display both high gravimetric capacitance (270 F g-1 at 0.5 A g-1) and high volumetric capacitance (287 F cm-3 at 0.5 A g-1). In addition, the PFC-700-based symmetric supercapacitor offers a high volumetric energy density (14.8 Wh L-1 at 490 W L-1) as well as a high stability (about 96.1% of capacitance retention after 10000 cycles at 2 A g-1).

  2. Preparation and photocatalytic activity of B, Ce Co-doped TiO2 hollow fibers photocatalyst

    NASA Astrophysics Data System (ADS)

    Qiu, Jingping; Sun, Xiaogang; Xing, Jun; Liu, Xiaobo

    2014-07-01

    A series of B, Ce co-doped TiO2 (B, Ce-TiO2) photocatalytic materials with a hollow fiber structure were successfully prepared by template method using boric acid, ammonium ceric nitrate and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500°C in an N2 atmosphere for 2 h. Scanning electron microscopy (SEM), X-ray diffraction (XRD), nitrogen adsorption-desorption measurements, and UV-visible spectroscopy (UV-Vis) were employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photocatalytic performance of the samples was studied by photodegradation phenol in water under UV light irradiation. The results showed that the TiO2 fiber materials have hollow structures, and the fiber structure materials showed better photocatalytic properties for the degradation of phenol than pure TiO2 under UV light. In the experiment condition, the photocatalytic activity of B, Ce co-doped TiO2 fibers was optimal of all the prepared samples. In addition, the possibility of cyclic usage of B, Ce co-doped TiO2 fiber photocatalyst was also confirmed, the photocatalytic activity of TiO2 fibers remained above 90% of that of the fresh sample after being used four times. The material was easily removed by centrifugal separation from the medium. It can therefore be potentially applied for the treatment of water contaminated by organic pollutants.

  3. Luminescence and energy transfer mechanism in Eu3+/Tb3+-co-doped ZrO2 nanocrystal rods

    NASA Astrophysics Data System (ADS)

    Ahemen, I.; Dejene, F. B.

    2017-01-01

    Nanocrystal rods of Eu3+/Tb3+-co-doped ZrO2 were synthesized using a simple chemical precipitation technique. Both ions were successfully doped into the Zr4+ ion site in a mixed structure containing both monoclinic and tetragonal phases. The Eu3+ or Tb3+ singly doped zirconia produced red and green luminescence which are characteristics of Eu3+ and Tb3+ ions, respectively. The co-doped zirconia samples produced blue emission from defect states transitions in the host ZrO2, red and green luminescence from dopant ions giving cool to warm white light emissions. The phosphors were efficiently excited by ultraviolet and near-ultraviolet/blue radiations giving white and red light, respectively. The decay lifetime was found to increase with increasing donor ion concentration contrary to conventional observations reported by previous researchers. Weak quadrupole-quatdrupole multipolar process was responsible for energy transfer from Tb3+ (donor) ion to Eu3+ ion. No energy back-transfer from Eu3+ to Tb3+ ion was observed from the excitation spectra. Temperature-dependent photoluminescence shows the presence of defects at low temperature, but these defects vanished at room temperature and beyond. The Eu3+/Tb3+-co-doped ZrO2 nanocrystal rod is a potential phosphor for white light application using UV as an excitation source. Thermoluminescence measurements show that the inclusion of Tb3+ ion increases trap depths in the host zirconia.

  4. FABRICATION AND PHOTOCATALYTIC PROPERTIES OF TiO2 NANOFILMS CO-DOPED WITH Fe3+ AND Bi3+ IONS

    NASA Astrophysics Data System (ADS)

    Gao, Qiongzhi; Liu, Xin; Liu, Wei; Liu, Fang; Fang, Yueping; Zhang, Shiying; Zhou, Wuyi

    2016-12-01

    In this work, the titanium dioxide (TiO2) nanofilms co-doped with Fe3+ and Bi3+ ions were successfully fabricated by the sol-gel method with dip-coating process. Methylene blue was used as the target degradation chemical to study the photocatalytic properties affected by different doping contents of Fe3+ and Bi3+ ions. The samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and infrared (IR) spectroscopy. The results indicated that both pure TiO2 nanofilms and single-doped samples possessed the photocatalytic activity in degradation of methylene blue. However, when the nanofilms co-doped with Fe3+ and Bi3+ ions were fabricated at the molar ratio of 3:1 (Fe3+:Bi3+), they exhibited the best photocatalytic activity after the heat treatment at 500∘C for 2h. The wettability property test indicated that the TiO2 nanofilms co-doped with Fe3+ and Bi3+ ions in the molar ratio 3:1 owned an excellent hydrophilic property.

  5. Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

    NASA Astrophysics Data System (ADS)

    Lee, In-Hwan; Cho, Han-Su; Bae, K. B.; Polyakov, A. Y.; Smirnov, N. B.; Zinovyev, R. A.; Baek, J. H.; Chung, Tae-Hoon; Shchemerov, I. V.; Kondratyev, E. S.; Pearton, S. J.

    2017-01-01

    The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

  6. Fabrication of non-enzymatic sensor using Co doped ZnO nanoparticles as a marker of H2O2

    NASA Astrophysics Data System (ADS)

    Khan, Sher Bahadar; Rahman, Mohammed M.; Asiri, Abdullah M.; Asif, Safi Asim Bin; Al-Qarni, Sara Abdullah S.; Al-Sehemi, Abdullah G.; Al-Sayari, Saleh A.; Al-Assiri, Mohammad Sultan

    2014-08-01

    Co doped ZnO nanoparticles were prepared by a simple thermal method and their functional relationships with H2O2 sensing were investigated. The sensing potential of Co doped ZnO nanoparticles were investigated using cyclic voltammeter. Co doped ZnO nanoparticles were characterized by FESEM, EDS, XRD, FTIR and XPS. The data obtained from the sensing study showed that Co doped ZnO nanoparticles are more sensitive toward H2O2. The results suggested that Co doped ZnO nanoparticles displayed tremendous electro-catalytic property for the reduction of H2O2. The performance of the sensor was further optimized using various pH and different scan rates. The developed sensor displayed high sensitivity (92.4444 μA mM-1 cm-2) and lower limit of detection (14.3 μM). Thus Co doped ZnO nanoparticles could be potential material for the construction of sensitive and efficient hydrogen peroxide sensor.

  7. Characterization of effective masses in InGaAsN quantum well structures by computer simulations

    NASA Astrophysics Data System (ADS)

    Wartak, M. S.; Weetman, P.

    2005-12-01

    Effective masses of holes in In0.36Ga0.64As1-xNx/GaAs quantum well structures were determined and analyzed. A ten-band k •p Hamiltonian matrix was used in the calculations. Systematic numerical results have been presented for a large range of material and structural parameters. Our results show that significant variation in the effective masses is possible by adjusting the relevant parameters.

  8. Effect of gallium concentrations on the morphologies, structural and optical properties of Ga-doped ZnO nanostructures.

    PubMed

    Algarni, H; El-Gomati, M M; Al-Assiri, M S

    2014-07-01

    The effect of gallium ion concentrations (0.5 and 2%) on the morphologies, structural and optical properties of Ga-doped ZnO nanostructures are presented. Ga-doped ZnO nanostructures were synthesized on silicon substrates by simple thermal evaporation process using metallic zinc and Ga powders in the presence of oxygen. Interestingly, it was observed that Ga-ions incorporation in ZnO nanomaterials play an important role on the growth kinetics and hence on the morphologies of as-grown Ga-doped ZnO nanostructures. It was seen that at low Ga-concentration, needle-shaped Ga-doped ZnO nanostructures are formed, presumably by subsequent stacking of hexagonal plates. However, when increasing the Ga-concentration, multipods of Ga-doped ZnO were grown. In addition to the morphologies, incorporating Ga-ions into ZnO also affect the room-temperature photoluminescence properties. Therefore, at lower Ga-ion concentration, an intense UV emission was observed while at high Ga-concentration a deep level emission was seen in the room-temperature photoluminescence spectra. This research demonstrates that by controlling the Ga-ion concentration the morphologies and optical properties of ZnO nanomaterials can be tailored.

  9. Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

    NASA Astrophysics Data System (ADS)

    Mula, Guido; Adelmann, C.; Moehl, S.; Oullier, J.; Daudin, B.

    2001-11-01

    We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN surface for appropriate Ga fluxes and substrate temperatures. The influence of the presence of this Ga film on the growth mode of GaN on AlN(0001) by plasma-assisted molecular-beam epitaxy is studied. It is demonstrated that under nearly stoichiometric and N-rich conditions, the GaN layer relaxes elastically during the first stages of epitaxy. At high temperatures the growth follows a Stranski-Krastanov mode, whereas at lower temperatures kinetically formed flat platelets are observed. Under Ga-rich conditions-where a Ga bilayer is rapidly formed due to excess Ga accumulating on the surface-the growth follows a Frank-van der Merwe layer-by-layer mode at any growth temperature and no initial elastic relaxation occurs. Hence, it is concluded that excess Ga acts as a surfactant, effectively suppressing both Stranski-Krastanov islanding and platelet formation. It is further demonstrated that the Stranski-Krastanov transition is in competition with elastic relaxation by platelets, and it is only observed when relaxation by platelets is inefficient. As a result, a growth mode phase diagram is outlined for the growth of GaN on AlN(0001).

  10. Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration

    SciTech Connect

    Park, Seoung-Hwan

    2014-02-14

    Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

  11. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  12. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect

    Nicholson, Don M; Odbadrakh, Khorgolkhuu; Rios, Orlando; Hodges, Jason P; Ludtka, Gerard Michael; Porter, Wallace D; Sefat, A. S.; Rusanu, Aurelian; Evans III, Boyd Mccutchen

    2012-01-01

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.

  13. (Indium, Aluminum) co-doped Zinc Oxide as a Novel Material System for Quantum-Well Multilayer Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Teehan, Sean

    Waste heat recovery from low efficiency industrial processes requires high performance thermoelectric materials to meet challenging requirements. The efficiency such a device is quantified by the dimensionless figure of merit ZT=S2sigmaT/kappa, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature and kappa is the thermal conductivity. For practical applications these devices are only cost-effective if the ZT is higher than 2. Theoretically it has been proven that by engineering nanostructures with lower dimensionality one can significantly increase ZT. A superlattice, or a system of 2-dimensional multilayer quantum wells has previously shown the potential to be used for thermoelectric structures. However, the use of conventional materials within these structures has only allowed this at low temperatures and has utilized cross-plane transport. This study focuses on both high temperature range operation and the in-plane transport properties of such structures, which benefit from both quantum confinement and an enhancement in density of states near EF. The n-type structures are fabricated by alternately sputtering barrier and well materials of Al-doped ZnO (AZO) and indium co-doped AZO, respectively. Samples investigated consist of 50 periods with targeted layer thicknesses of 10nm, which results in sufficient sampling material as well as quantum well effects. The indium doping level within the quantum well was controlled by varying the target power, and ultimately results in a 3x improvement in power factor (S 2sigma) over the parent bulk materials. The film characterization was determined by X-ray reflectometry, transmission electron microscopy, X-ray diffraction, auger electron spectroscopy, as well as other relevant techniques. In addition, process optimization was performed on material parameters such as layer thickness, interface roughness, and band-gap offset which all play a major role in determining the

  14. Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

    SciTech Connect

    Abderrahmane, A.; Takahashi, H.; Tashiro, T.; Ko, P. J.; Okada, H.; Sandhu, A.; Sato, S.; Ohshima, T.

    2014-02-20

    The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10{sup 14}, 10{sup 15} and 10{sup 16} protons/cm{sup 2} is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10{sup 15} protons/cm{sup 2} the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

  15. Enhanced up-conversion and temperature-sensing behaviour of Er(3+) and Yb(3+) co-doped Y2Ti2O7 by incorporation of Li(+) ions.

    PubMed

    Singh, B P; Parchur, A K; Ningthoujam, R S; Ramakrishna, P V; Singh, S; Singh, P; Rai, S B; Maalej, R

    2014-11-07

    Y2Ti2O7:Er(3+)/Yb(3+) (EYYTO) phosphors co-doped with Li(+) ions were synthesized by a conventional solid-state ceramic method. X-ray diffraction studies show that all the Li(+) co-doped EYYTO samples are highly crystalline in nature with pyrochlore face centred cubic structure. X-ray photon spectroscopy studies reveal that the incorporation of Li(+) ions creates the defects and/or vacancies associated with the sample surface. The effect of Li(+) ions on the photoluminescence up-conversion intensity of EYYTO was studied in detail. The up-conversion study under ∼976 nm excitation for different concentrations of Li(+) ions showed that the green and red band intensities were significantly enhanced. The 2 at% Li(+) ion co-doped EYYTO samples showed nearly 15- and 8-fold enhancements in green and red band up-converted intensities compared to Li(+) ion free EYYTO. The process involved in the up-conversion emission was evaluated in detail by pump power dependence, the energy level diagram, and decay analysis. The incorporation of Li(+) ions modified the crystal field around the Er(3+) ions, thus improving the up-conversion intensity. To investigate the sensing application of the synthesized phosphor materials, temperature-sensing performance was evaluated using the fluorescence intensity ratio technique. Appreciable temperature sensitivity was obtained using the synthesized phosphor material, indicating its applicability as a high-temperature-sensing probe. The maximum sensitivity was found to be 0.0067 K(-1) at 363 K.

  16. [Crystal structure and upconversion emission of Yb3+/Er(3+) -co-doped NaYF4 nanocrystals].

    PubMed

    Yao, Li-Li; Luo, Li; Dong, Guo-Shuai; Wang, Yin-Hai

    2013-11-01

    Yb3+/EP(3+) -co-doped cubic NaYF4 and Yb3+/Er3+/Gd(3+) -tri-doped hexagonal NaYF4 nanocrystals were synthesized by a modified coprecipitation method with ethylenediamine tetraacetic acid (EDTA) as chelating agent. The samples' morphology, crystal phase and upconversion emission were measured with transmission electron microscope (TEM), X-ray diffraction patterns (XRD) and upconversion luminescence spectrum. TEM and XRD results showed that the phase transition from cubic to hexagonal was promoted through Gd3+ doping. It has been reported that the upconversion efficiency of hexagonal NaYF4 is higher than that of cubic NaYF4, however, the effect of crystal phase on upconversion luminescence has not been well understood. This work focuses analysis of measurement results to compare the effect of, crystal phase on the crystal field energy splitting and upconversion emission intensity as well as emission color, and a mechanism of luminescence enhancement and color tunability are revealed. Strong visible upconversion luminescence can be seen clearly by the naked eyes in both cubic phase and hexagonal phase samples upon excitation by a 980 nm laser diode with power of 10 mW, consisting of green emissions centered at around 525/550 nm originating from the transitions of 2H11/2/4 S3/2 --> 4 I15/2 and red emission at about 657 nm from 4F9/2 to 4 I15/2 of Er3+ ions respectively. In comparison to cubic sample, the hexagonal phase sample presented much stronger and sharper upconversion luminescence, whose emission efficiency was enhanced 10 times with an additional transition of 2 H9/2 --> 4I13/2 at 557 nm, furthermore, the intensity ratio of red to green emission increased from 2 :1 to 3 : 1. Doping NaYF4 nanocrystals with Gd3+ ions induced the hexagonal-to-cubic phase transition and thus decreased the crystal symmetry, consequently increased absorption cross-section and 4f-4f transition probabilities by relaxing forbidden selection rules, resulting in stronger emission. In the

  17. Magnetic nanoparticles formed in glasses co-doped with iron and larger radius elements

    SciTech Connect

    Edelman, I.; Ivanova, O.; Ivantsov, R.; Velikanov, D.; Zabluda, V.; Zubavichus, Y.; Veligzhanin, A.; Zaikovskiy, V.; Stepanov, S.; Artemenko, A.; Curely, J.; Kliava, J.

    2012-10-15

    A new type of nanoparticle-containing glasses based on borate glasses co-doped with low contents of iron and larger radius elements, Dy, Tb, Gd, Ho, Er, Y, and Bi, is studied. Heat treatment of these glasses results in formation of magnetic nanoparticles, radically changing their physical properties. Transmission electron microscopy and synchrotron radiation-based techniques: x-ray diffraction, extended x-ray absorption fine structure, x-ray absorption near-edge structure, and small-angle x-ray scattering, show a broad distribution of nanoparticle sizes with characteristics depending on the treatment regime; a crystalline structure of these nanoparticles is detected in heat treated samples. Magnetic circular dichroism (MCD) studies of samples subjected to heat treatment as well as of maghemite, magnetite, and iron garnet allow to unambiguously assign the nanoparticle structure to maghemite, independently of co-dopant nature and of heat treatment regime used. Different features observed in the MCD spectra are related to different electron transitions in Fe{sup 3+} ions gathered in the nanoparticles. The static magnetization in heat treated samples has non-linear dependence on the magnetizing field with hysteresis. Zero-field cooled magnetization curves show that at higher temperatures the nanoparticles occur in superparamagnetic state with blocking temperatures above 100 K. Below ca. 20 K, a considerable contribution to both zero field-cooled and field-cooled magnetizations occurs from diluted paramagnetic ions. Variable-temperature electron magnetic resonance (EMR) studies unambiguously show that in as-prepared glasses paramagnetic ions are in diluted state and confirm the formation of magnetic nanoparticles already at earlier stages of heat treatment. Computer simulations of the EMR spectra corroborate the broad distribution of nanoparticle sizes found by 'direct' techniques as well as superparamagnetic nanoparticle behaviour demonstrated in the magnetization

  18. Novel tannin-based Si, P co-doped carbon for supercapacitor applications

    NASA Astrophysics Data System (ADS)

    Ramasahayam, Sunil Kumar; Nasini, Udaya B.; Shaikh, Ali U.; Viswanathan, Tito

    2015-02-01

    Increasing environmental pollution and population compounded by a decrease in the availability of non-renewable resources and fossil fuels has propelled the need for sustainable alternate energy storage technologies particularly in the last two decades. An attempt to meet this crisis was carried out by a unique, microwave-assisted method which has enabled the generation of a novel Si, P co-doped carbon (SiPDC) for supercapacitor applications. The microwave-assisted method is useful in developing SiPDC at a rapid and economical fashion that does not employ any inert or reducing gases, but is high yielding. Varying proportions of precursor materials were utilized to generate four SiPDCs (SiPDC-1, SiPDC-2, SiPDC-3 and SiPDC-4) with varying contents of dopants as evidenced by X-ray photoelectron spectroscopic (XPS) results. Surface area and pore size analysis revealed that SiPDC-2 has a surface area of 641.51 m2 g-1, abundant micropores, mesopores and macropores which are critical for electrical double layer capacitance (EDLC). Of all the SiPDCs, SiPDC-2 exhibited highest capacitance of 276 F g-1 in 1 M H2SO4 and 244 F g-1 in 6 M KOH at a scan rate of 5 mV s-1. Galvanostatic charge-discharge studies performed in 6 M KOH establish the high capacitance of SiPDC-2. SiPDC-2 also exhibited excellent electrochemical stability in 1 M H2SO4 and 6 M KOH.

  19. Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    He, Jun; Bao, Feng; Zhang, Jinping

    2012-04-01

    We systematically study the influence of group V intermixing on the structural and optical properties of type II GaSb/GaAs quantum dots (QDs) capped by selected capping layers. Compared to GaSb QDs capped directly by a GaAs layer, we observe a strong enhancement of photoluminescence (PL) intensity and a significant red-shift of the photoluminescence peak energy to 1.35 μm at 300 K by the introduction of a GaAsSb capping layer. In addition, Z-contrast cross sectional transmission electron microscopy shows Sb segregation and group V mixing is greatly suppressed by GaAsSb or InGaAsSb capping layers. The new capping layers offers the possibility of controlling optical properties of type II GaSb/GaAs quantum dots and this opens up new means for achieving high efficient GaSb/GaAs quantum dot solar cell.

  20. Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures

    NASA Astrophysics Data System (ADS)

    Vakulenko, O. V.; Golovynskyi, S. L.; Kondratenko, S. V.

    2011-08-01

    Having used thermally stimulated conductivity (TSC) technique, we identified deep electron traps that produce strong effects on charge carrier transport and photoconductivity in InGaAs/GaAs quantum dot (QD) structures. The values of deep levels below the conduction band of GaAs at 0.16, 0.22, and 0.35 eV are obtained from the analysis of the shapes of TSC curves after the excitation with the quanta energy hv = 0.9, 1.2, and 1.6 eV. The level 0.16 eV in depth is an effective electron trap that provides crossing of lateral conductivity with a high-resistance mode and, therefore, causes a high photocurrent sensitivity of about 3 A/W at 77 K with excitation by interband transitions in QDs. We determined the charge density of electrons captured by the (Ec - 0.16 eV) level to be 2 × 10-6 C/cm2 at 77 K that induces electric field ˜ 105 V/cm in a vicinity of QDs. The state at Ec - 0.22 eV is shown to be related to the recombination center that can hold non-equilibrium holes over a long time under the condition that the non-equilibrium holes are localized by the quantum states of QDs. In the course of long-term electron storage in a vicinity of QDs, an electron trapped at the (Ec - 0.16) eV level can be recaptured by a deeper spatially remote (Ec - 0.22 eV) level that allows the TSC peak observation at 106 K.

  1. Effect of device geometry on static and dynamic performance of AlGaN/GaN-on-Si high electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Shi, Jin-Shan; Huang, Hong-Fan; Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Wang, Peng-Fei

    2016-08-01

    This paper discusses the effects of several geometric parameters in DC and RF performances of AlGaN/GaN high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrates. Those parameters include the dependency of gate length (L g), gate cap length (L cap) and gate-to-source distance (L gs). It is shown that decreasing L g and L gs can both improve maximum drain current and transconductance behaviors. The fabricated 50 μm wide GaN-HEMT exhibits the maximum drain current of 1 A mm-1 at V g = 2 V and maximum extrinsic transconductance G mmax of 240 mS mm-1. Besides, decreasing L g and L cap also provides the improvement on current gain frequency (fT ) and maximum oscillation cut off frequency (f MAX). The fT of 40 GHz and f MAX of 55 GHz at V ds = 5 V are demonstrated by GaN-HEMT device featuring L g of 200 nm, L cap of 300 nm and L gs of 1.2 μm, which can realize the compact solid-state power amplifier used in S and C band. However, gate-to-source distance has little effect on RF performance of AlGaN/GaN HEMTs. Those results compared in our study are not only very essential for accurate GaN-based HEMT device modeling and fabrication, but are also vital to better understanding of their device physics.

  2. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    SciTech Connect

    Hiroki, Masanobu Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  3. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    PubMed Central

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-01-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

  4. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  5. Giant planar Hall effect in epitaxial (Ga,Mn)as devices.

    PubMed

    Tang, H X; Kawakami, R K; Awschalom, D D; Roukes, M L

    2003-03-14

    Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

  6. Synthesis and properties of ZnTe and Eu{sup 3+} ion co-doped glass nanocomposites

    SciTech Connect

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-10-28

    In this study, ZnTe (II-VI) semiconductor and Eu{sup +3}-ion co-doped borosilicate glass has been prepared in the SiO{sub 2}-K{sub 2}O-CaO-BaO-B{sub 2}O{sub 3} glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10{sup −6}/K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λ{sub cut-off}) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the {sup 5}D{sub 0} → {sup 7}F{sub 2} transition. An intense 394 nm excitation band corresponding to the {sup 7}F{sub 0} → {sup 5}L{sub 6} transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu{sup 3+} ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. {sup 5}D{sub 1} → {sup 7}F{sub 0} transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu{sup 3+} ions in the low phonon energy ZnTe crystal sites. The

  7. Upconversion luminescence and blackbody radiation in tetragonal YSZ co-doped with Tm3+ and Yb3+

    NASA Astrophysics Data System (ADS)

    Soares, M. R. N.; Ferro, M.; Costa, F. M.; Monteiro, T.

    2015-11-01

    Lanthanide doped inorganic nanoparticles with upconversion luminescence are of utmost importance for biomedical applications, solid state lighting and photovoltaics. In this work we studied the downshifted luminescence, upconversion luminescence (UCL) and blackbody radiation of tetragonal yttrium stabilized zirconia co-doped with Tm3+ and Yb3+ single crystals and nanoparticles produced by laser floating zone and laser ablation in liquids, respectively. The photoluminescence (PL) and PL excitation (PLE) were investigated at room temperature (RT). PL spectra exhibit the characteristic lines in UV, blue/green, red and NIR regions of the Tm3+ (4f12) under resonant excitation into the high energy 2S+1LJ multiplets. Under NIR excitation (980 nm), the samples placed in air display an intense NIR at ~800 nm due to the 1G4 --> 3H5/3H4 --> 3H6 transitions. Additionally, red, blue/green and ultraviolet UCL is observed arising from higher excited 1G4 and 1D2 multiplets. The power excitation dependence of the UCL intensity indicated that 2-3 low energy absorbed photons are involved in the UCL for low power levels, while for high powers, the identified saturation is dependent on the material size with a enhanced effect on the NPs. The temperature dependence of the UCL was investigated for single crystals and targets used in the ablation. An overall increase of the integrated intensity was found to occur between 12 K and the RT. The thermally activated process is described by activation energies of 10 meV and 30 meV for single crystals and targets, respectively. For the NPs, the UCL was found to be strongly sensitive to pressure conditions. Under vacuum conditions, instead of the narrow lines of the Tm3+, a wide blackbody radiation was detected, responsible for the change in the emission colour from blue to orange. This phenomenon is totally reversible when the NPs are placed at ambient pressure. The UCL/blackbody radiation in the nanosized material exhibits non-contact pressure

  8. Upconversion luminescence and blackbody radiation in tetragonal YSZ co-doped with Tm(3+) and Yb(3+).

    PubMed

    Soares, M R N; Ferro, M; Costa, F M; Monteiro, T

    2015-12-21

    Lanthanide doped inorganic nanoparticles with upconversion luminescence are of utmost importance for biomedical applications, solid state lighting and photovoltaics. In this work we studied the downshifted luminescence, upconversion luminescence (UCL) and blackbody radiation of tetragonal yttrium stabilized zirconia co-doped with Tm(3+) and Yb(3+) single crystals and nanoparticles produced by laser floating zone and laser ablation in liquids, respectively. The photoluminescence (PL) and PL excitation (PLE) were investigated at room temperature (RT). PL spectra exhibit the characteristic lines in UV, blue/green, red and NIR regions of the Tm(3+) (4f(12)) under resonant excitation into the high energy (2S+1)LJ multiplets. Under NIR excitation (980 nm), the samples placed in air display an intense NIR at ∼800 nm due to the (1)G4→(3)H5/(3)H4→(3)H6 transitions. Additionally, red, blue/green and ultraviolet UCL is observed arising from higher excited (1)G4 and (1)D2 multiplets. The power excitation dependence of the UCL intensity indicated that 2-3 low energy absorbed photons are involved in the UCL for low power levels, while for high powers, the identified saturation is dependent on the material size with a enhanced effect on the NPs. The temperature dependence of the UCL was investigated for single crystals and targets used in the ablation. An overall increase of the integrated intensity was found to occur between 12 K and the RT. The thermally activated process is described by activation energies of 10 meV and 30 meV for single crystals and targets, respectively. For the NPs, the UCL was found to be strongly sensitive to pressure conditions. Under vacuum conditions, instead of the narrow lines of the Tm(3+), a wide blackbody radiation was detected, responsible for the change in the emission colour from blue to orange. This phenomenon is totally reversible when the NPs are placed at ambient pressure. The UCL/blackbody radiation in the nanosized material exhibits

  9. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

    NASA Astrophysics Data System (ADS)

    Qian, H.; Lee, K. B.; Vajargah, S. Hosseini; Novikov, S. V.; Guiney, I.; Zaidi, Z. H.; Jiang, S.; Wallis, D. J.; Foxon, C. T.; Humphreys, C. J.; Houston, P. A.

    2017-02-01

    A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.

  10. Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.

    PubMed

    Ungan, Fatih; Yesilgul, Unal; Sakiroğlu, Serpil; Kasapoglu, Esin; Erol, Ayse; Arikan, Mehmet Cetin; Sarı, Huseyin; Sökmen, Ismail

    2012-10-31

    Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

  11. Effects of Al additives on growth of GaN polycrystals by the Na flux method

    NASA Astrophysics Data System (ADS)

    Imabayashi, Hiroki; Murakami, Kosuke; Matsuo, Daisuke; Honjo, Masatomo; Imanishi, Masayuki; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-03-01

    In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dramatically increased from those in Al-free Na flux, and the polycrystals grown by the Al-added Na flux method were highly transparent. As observed in secondary ion mass spectroscopy measurements, the Al content of the polycrystals was below the detection limit of 3 × 1016 atoms/cm3. From these results, the Al-added Na flux method is found to be appropriate for fabricating a large amount of GaN polycrystals without deteriorating the crystal quality.

  12. Effects of magnetic field and the built-in internal fields on the absorption coefficients in a strained wurtzite GaN/AlGaN quantum dot

    NASA Astrophysics Data System (ADS)

    Minimala, N. S.; Peter, A. John

    2013-02-01

    Effects of magnetic field strength and the built-in electric fields on the exciton binding energy and the non-linear optical property such as absorption coefficients in a GaN/AlGaN wide band gap heterostructure are investigated. The internal fields due to spontaneous and piezo-electric polarizations are included in the Hamiltonian. Our results show that the optical absorption coefficients strongly depend on the internal fields and the applied magnetic field.

  13. Temperature Dependent Current-Voltage Measurements of Neutron Irradiated A10.27Ga0.73N/GaN Modulation Doped Field Effect Transistors

    DTIC Science & Technology

    2005-03-01

    locations within the reactor), the neutron energy spectrum is reduced to a monoenergetic source with a damage effectiveness equivalent to the entire...58], [59]. The 1 MeV Eq is the fluence required of 1 MeV monoenergetic neutrons to cause the same amount of damage as the entire spectrum for a...Can you TEMPERATURE DEPENDENT CURRENT-VOLTAGE MEASUREMENTS OF NEUTRON IRRADIATED Al0.27Ga0.73N/GaN

  14. Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

    NASA Astrophysics Data System (ADS)

    Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

    2017-03-01

    In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

  15. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (μ-PL) and μ-PL excitation (μ-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  16. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    NASA Astrophysics Data System (ADS)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  17. Preparation and characterization of visible-light-driven TiO2 photocatalyst Co-doped with nitrogen and erbium.

    PubMed

    Chen, Guihua; Wang, Yong; Zhang, Juihui; Wu, Chenglin; Liang, Huading; Yang, Hui

    2012-05-01

    A series of nitrogen and erbium co-doped TiO2 photocatalyst was prepared by sol-hydrothermal method. The structure and properties of the photocatalyst were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, X-ray photoelectron spectroscopy (XPS), and UV-vis diffuse reflectance spectra (DRS). The XRD and BET results showed that co-doping inhibited the increase of crystallite size and enlarged specific surface areas. XPS spectroscopy indicated nitrogen atoms were incorporated into TiO2 lattice, and erbium atoms mostly existed in the forms of Er2O3. A shift of the absorption edge to the lower energy and four absorption bands located at 654, 544, 524 and 489 nm attributed to the 4f transitions of 4I15/2 --> 4F2/9, 4I15/2 --> 4S3/2, 4I15/2 --> 2H11/2, 4I15/2 --> 4F7/2 of Er3+ were observed using DRS spectroscopy. The catalytic efficency was evaluated by the photocatalytic degradation of methyl orange (MO) under visible light irradiation. The results showed that the photocatalytic performance of the co-doped TiO2 was related with the hydrothermal temperature and the molar ratio of N/Ti, and they showed higher acitivites than pure TiO2. Results determined by fluorescence technique revealed that irradiation (lambda > 400 nm) of TiO2 photocatalyst dispersed in MO solution induces the generation of the highly active hydroxyl radicals (OH). It indicated the photocatalytic activities of TiO2 photocatalyst were correlation with the formation rate of hydroxyl radicals (OH) and other active oxygen species.

  18. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  19. Effect of the Photoquenching of EL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices

    NASA Astrophysics Data System (ADS)

    Wang, Ping; Fukuyama, Atsuhiko; Akashi, Yoshito; Ikari, Tetsuo

    2008-01-01

    Two nondestructive techniques, surface photovoltage (SPV) and piezoelectric photothermal (PPT) spectroscopies, were adopted to investigate a GaAs single quantum well (SQW) confined by GaAs/AlAs short-period superlattices (SPSs) fabricated on a semi-insulating (SI) GaAs substrate, whose absorption spectra cannot be obtained easily using conventional techniques. Excitonic absorptions associated with subband transitions in a GaAs SQW and SPSs were clearly observed. We also examined how a SI-GaAs substrate affects the PPT and SPV spectra, particularly the effect of the photoquenching of the deep donor level EL2. It was found that the photoquenching of EL2 causes a significant change in the total built-in potential at the interface between the epitaxial layers and the substrate, and affected the signal intensities observed in the PPT and SPV spectra. The present experimental results have shown that a large amount of carrier leakage occurs from a GaAs SQW and SPSs to the sample surface, even in the presence of Al0.3Ga0.7As buffer layers.

  20. Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

  1. Investigation of the stability of Co-doped apatite ionic conductors in NH{sub 3}

    SciTech Connect

    Headspith, D.A.; Orera, A.; Young, N.A.; Francesconi, M.G.

    2010-12-15

    Hydrogen powered solid oxide fuel cells (SOFCs) are of enormous interest as devices for the efficient and clean production of electrical energy. However, a number of problems linked to hydrogen production, storage and transportation are slowing down the larger scale use of SOFCs. Identifying alternative fuel sources to act as intermediate during the transition to the full use of hydrogen is, therefore, of importance. One excellent alternative is ammonia, which is produced on a large scale, is relatively cheap and has the infrastructure for storage and transportation already in place. However, considering that SOFCs operate at temperatures higher than 500 {sup o}C, a potential problem is the interaction of gaseous ammonia with the materials in the cathode, anode and solid electrolyte. In this paper, we extend earlier work on high temperature reactions of apatite electrolytes with NH{sub 3} to the transition metal (Co) doped systems, La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5}. A combination of PXRD, TGA and XAFS spectroscopy data showed a better structural stability for the silicate systems. Apatite silicates and germanates not containing transition metals tend to substitute nitride anions for their interstitial oxide anions, when reacted with NH{sub 3} at high temperature and, consequentially, lower the interstitial oxide content. In La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} reduction of Co occurs as a competing process, favouring lower levels of nitride-oxide substitution. -- Graphical Abstract: In reactions between the apatites La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} and NH{sub 3} (g) at temperatures T>500 {sup o}C, the partial substitution of the Si and Ge by Co seems to discourage O{sup 2-}/N{sup 3-} substitution in favour of the reduction of the metal. Display Omitted

  2. TiO2 nanoparticles co-doped with silver and nitrogen for antibacterial application.

    PubMed

    Yuan, Yali; Ding, Jianqiang; Xu, Jinsheng; Deng, Jian; Guo, Jianbo

    2010-08-01

    We have prepared a series of TiO2 nanoparticles for antibacterial applications. These TiO2 nanoparticles were prepared by the hydrolysis precipitation method with Ti(OBu)4, silver nitrate and ammonia. Crystal structure, particle size, interfacial structure and UV-visible light response of the prepared nanoparticles were characterized by X-ray diffraction measurements (XRD), Transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FTIR) and UV-Vis diffuse reflectance spectroscopy (UV-Vis-DRs). The XRD spectra showed that all samples were anatase structure calcined at 450 degrees C for 3 hours. The Ag doping made the peak of diffraction wider. The results of TEM showed that the nanoparticles of TiO2, N-TiO2 and 1% Ag-N-TiO2 were all spherical in shape and well distributed with a mean size of 19.8 nm, 39.2 nm and 20.7 nm, respectively. N doping caused the nanoparticle size to increase, while, when the doped amount of Ag+ increased, the TiO2 particle size decreased. The FTIR revealed that Ag and N doping of TiO2 appeared to have strong absorption by -OH group and showed the characteristic absorption band of NH4+ and Ag. The UV-Vis-DRs indicated that the absorption band of Ag-N co-doped TiO2 had red shift and that the optical absorption response (between 400 nm and 700 nm) had obvious enhancement. The antibacterial properties of nanoparticles were investigated by agar diffusion method toward Escherichia coli and Bacillus subtilis. The results indicated that both Ag- and N-doped TiO2 could increase the antibacterial properties of TiO2 nanoparticles under fluorescent light irradiation. A 1% Ag-N-TiO2 had the highest antibacterial activity with a clear antibacterial circle of 33.0 mm toward Escherichia coli and 22.8 mm toward Bacillus subtilis after cultivation for 24 hours.

  3. The microstructure of erbium-ytterbium co-doped oxyfluoride glass-ceramic optical fibers

    NASA Astrophysics Data System (ADS)

    Augustyn, Elżbieta; Żelechower, Michał; Stróż, Danuta; Chrapoński, Jacek

    2012-04-01

    Oxyfluoride transparent glass-ceramics combine some features of glasses (easier shaping or lower than single crystals cost of fabrication) and some advantages of rare-earth doped single crystals (narrow absorption/emission lines and longer lifetimes of luminescent levels). Since the material seems to be promising candidate for efficient fiber amplifiers, the manufacturing as well as structural and optical examination of the oxyfluoride glass-ceramic fibers doped with rare-earth ions seems to be a serious challenge. In the first stage oxyfluoride glasses of the following compositions 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-11PbF2-3ErF3 and 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-10PbF2-3YbF3-1ErF3 (in molar%) were fabricated from high purity commercial chemicals (Sigma-Aldrich). The fabricated glass preforms were drawn into glass fibers using the mini-tower. Finally, the transparent Er3+ doped and Er3+/Yb3+ co-doped oxyfluoride glass-ceramic fibers were obtained by controlled heat treatment of glass fibers. The preceding differential thermal analysis (DTA) studies allowed estimating both the fiber drawing temperature and the controlled crystallization temperature of glass fibers. X-ray diffraction examination (XRD) at each stage of the glass-ceramic fibers fabrication confirmed the undesirable crystallization of preforms and glass fibers has been avoided. The fibers shown their mixed amorphous-crystalline microstructure with nano-crystals of size even below 10 nm distributed in the glassy host. The crystal structure of the grown nano-crystals has been determined by XRD and confirmed by electron diffraction (SAED). Results obtained by both techniques seem to be compatible: Er3FO10Si3 (monoclinic; ICSD 92512), Pb5Al3F19 (triclinic; ICSD 91325) and Er4F2O11Si3 (triclinic; ICSD 51510) against to initially expected PbF2 crystals.

  4. Abnormal phase transition and magnetic properties in Cu, Fe co-doped In2O3 nanocrystals

    NASA Astrophysics Data System (ADS)

    Chu, Dewei; Zeng, Yu-Ping; Jiang, Dongliang

    2008-05-01

    Fe, Cu co-doped In2O3 nanocrystals were synthesized by a coprecipitation method. Phase analyses revealed that Fe ions have high solubility (up to 15.4at.%) in the In2O3 matrix, while the Cu ions strongly restrain In2O3 phase transition from cubic to hexagonal. Raman spectroscopy shows that by adding Cu ions, the defect concentration increases. The samples show no evidence of ferromagnetism by additional Cu doping, indicating that Cu content might be a key point to realize room temperature ferromagnetism in Fe doped In2O3.

  5. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

    PubMed

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-05-07

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

  6. Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

    SciTech Connect

    Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-09-15

    AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs to examine FETs for both device responses and surface chemistry changes. Measurements demonstrated threshold voltage shifting after the functionalization and soaking processes, but demonstrated stable FET behavior throughout. X-ray photoelectron spectroscopy and atomic force microscopy confirmed peptides attachment to device surfaces before and after water soaking. Results of this work point to the stability of peptide coated functionalized AlGaN/GaN devices in solution and support further research of these devices as disposable, long term, in situ biosensors.

  7. Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

    NASA Astrophysics Data System (ADS)

    Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-09-01

    AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs to examine FETs for both device responses and surface chemistry changes. Measurements demonstrated threshold voltage shifting after the functionalization and soaking processes, but demonstrated stable FET behavior throughout. X-ray photoelectron spectroscopy and atomic force microscopy confirmed peptides attachment to device surfaces before and after water soaking. Results of this work point to the stability of peptide coated functionalized AlGaN/GaN devices in solution and support further research of these devices as disposable, long term, in situ biosensors.

  8. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Xu, Zhi-Hao; Zhang, Jin-Cheng; Zhang, Zhong-Fen; Zhu, Qing-Wei; Duan, Huan-Tao; Hao, Yue

    2009-12-01

    AlGaN/GaN heterostructures on vicinal sapphire substrates and just-oriented sapphire substrates (0001) are grown by the metalorganic chemical vapor deposition method. Samples are studied by high-resolution x-ray diffraction, atomic force microscopy, capacitance-voltage measurement and the Van der Pauw Hall-effect technique. The investigation reveals that better crystal quality and surface morphology of the sample are obtained on the vicinal substrate. Furthermore, the electrical properties are also improved when the sample is grown on the vicinal substrate. This is due to the fact that the use of vicinal substrate can promote the step-flow mode of crystal growth, so many macro-steps are formed during crystal growth, which causes a reduction of threading dislocations in the crystal and an improvement in the electrical properties of the AlGaN/GaN heterostructure.

  9. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  10. Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

    SciTech Connect

    Kim, Hyo-Jin; Yoo, Sang-Im

    2014-12-15

    An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn{sub 0.8}Zn{sub 0.2})Fe{sub 2}O{sub 4} (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn{sub 0.8}Zn{sub 0.2}){sub 1−x}Ga{sub x}Fe{sub 2}O{sub 4} (x = 0 ∼ 0.1) were prepared by the conventional solid state reaction at 1400°C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga{sup 3+} ion substitution for the (Mn, Zn){sup 2+} site.

  11. Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

    PubMed

    Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

    2016-03-07

    The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results.

  12. Properties of transparent (Gd,Lu)3(Al,Ga)5O12:Ce ceramic with Mg, Ca and Ce co-dopants

    NASA Astrophysics Data System (ADS)

    Wang, Yimin; Baldoni, Gary; Brecher, Charles; Rhodes, William H.; Shirwadkar, Urmila; Glodo, Jarek; Shah, Ishaan; Ji, Chuncheng

    2015-08-01

    Cerium activated mixed lutetium/gadolinium- and aluminum/gallium-based garnets have great potential as host scintillators for medical imaging applications. (Gd,Lu)3(Al,Ga)5O12:Ce and denoted as GLuGAG feature high effective atomic number and good light yield, which make it particularly attractive for Positron Emission Tomography (PET) and other γ-ray detection applications. For PET application, rapid decay and good timing resolution are extremely important. Most Ce-doped mixed garnet materials such as GLuGAG:Ce, have their main decay component at around 80 ns. However, it has been reported that the decays of some single crystal scintillators (e.g., LSO and GGAG) can be effectively accelerated by codoping with selected additives such as Ca, Mg and B. In this study, transparent polycrystalline (Gd,Lu)3(Al,Ga)5O12:Ce ceramics codoped with Ca or Mg or additional Ce, were fabricated by the sinter-HIP approach. It was found the transmission of the ceramics are closely related to the microstructure of the ceramics. As the co-dopant levels increase, 2nd phase occurs in the ceramic and thus transparency of the ceramic decreases. Ca and Mg co-doping in GLuGAG:Ce ceramic effectively accelerate decays of GLuGAG:Ce ceramics at a cost of light output. However, additional Ce doping in the GLuGAG:Ce has no benefit on improving decay time but, on the other hand, reduces transmission, light output. The mechanism under the different scintillation behaviors with Mg, Ca and Ce dopants are discussed. The results suggest that decay time of GLuGAG:Ce ceramics can be effectively tailored by co-doping GLuGAG:Ce ceramic with Mg and Ca for applications with optimal timing resolution.

  13. Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

    SciTech Connect

    Ghosh, Saptarsi Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Kabi, Sanjib; Chakraborty, Apurba; Chang, Edward Yi; Biswas, Dhrubes

    2014-08-18

    Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the current dispersion characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed to modulate the dislocation density among the heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow pulsed I-V measurements show severe compressions and appear to be significantly dependent on the threading dislocation density. By analyzing the corresponding slow detrapping process, a deep-level trap with emission time constant in the order of seconds was identified as the cause. Among the specimens, both in the epilayers and at the surface, the number of dislocations was found to have a notable influence on the spatial distribution of deep-level trap density. The observations confirm that the commonly observed degraded frequency performance among AlGaN/GaN HFETs in the form of DC-radio frequency dispersions can at least partly be correlated with threading dislocation density.

  14. Higher-order nonlinear electromechanical effects in wurtzite GaN/AlN quantum dots.

    PubMed

    Bahrami-Samani, Mehrdad; Patil, Sunil R; Melnik, Roderick

    2010-12-15

    As we demonstrated earlier, conventional mathematical models based on linear approximations may be inadequate in the analysis of properties of low-dimensional nanostructures and band structure calculations. In this work, a general three-dimensional axisymmetric coupled electromechanical model accounting for lattice mismatch, spontaneous polarization and higher-order nonlinear electrostriction effects has been applied to analyze properties of GaN/AlN quantum dots coupled with wetting layer. The generalized model that accounts for five independent electrostriction coefficients has been solved numerically via a finite-element implementation. The results, exemplified for truncated conical GaN/AlN quantum dots, demonstrate that the effect of nonlinear electrostriction in GaN/AlN nanoheterostructure quantum dots could be significant. In particular, the influence of nonlinear electromechanical effects on optoelectronic properties is highlighted by the results on band structure calculations based on a multiband effective mass theory.

  15. Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Ko, Kwangse; Lee, Kyeongjae; So, Byeongchan; Heo, Cheon; Lee, Kyungbae; Kwak, Taemyung; Han, Sang-Woo; Cha, Ho-Young; Nam, Okhyun

    2017-01-01

    The present study investigated the Mg doping effect in the gallium nitride (GaN) buffer layers (BLs) of AlGaN/GaN high-electron-mobility transistor (HEMT) structures grown on semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition. When the Mg concentration was increased from 3 × 1017 to 8 × 1018 cm-3, the crystal quality slightly deteriorated, whereas electrical properties were significantly changed. The buffer leakage increased approximately 50 times from 0.77 to 39.2 nA at -50 V with the Mg doping concentration. The Mg-compensation effect and electron trapping effect were observed at Mg concentration of 3 × 1017 and 8 × 1018 cm-3, respectively, which were confirmed by an isolation leakage current test and low-temperature photoluminescence. When the BL was compensated, the two-dimensional electron gas (2DEG) mobility and sheet carrier concentration of the HEMTs were 1560 cm2 V-1 s-1 and 5.06 × 1012 cm-2, respectively. As a result, Mg-doped GaN BLs were demonstrated as a candidates of semi-insulating BLs for AlGaN/GaN HEMT.

  16. Spectroscopic characterization and energy transfer process in cobalt and cobalt-iron co-doped ZnSe/ZnS crystals

    NASA Astrophysics Data System (ADS)

    Peppers, J.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    Cobalt doped II-VI wide band semiconductors (e.g. ZnSe, ZnS, CdSe) are promising media for infrared (IR) laser applications. They could be utilized as effective passive Q-switches for cavities of Alexandrite as well as Nd and Er lasers operating over 0.7-0.8, 1.3-1.6, and ~2.8 μm spectral ranges. We report spectroscopic characterization of Co:ZnSe and Co:ZnS crystals. Absorption cross-sections were measured for 4A2(F) → 4T1(P), 4A2(F) → 4T1(F), and 4A2(F) → 4T2(F) transitions with maximum absorption at 768(726), 1615(1500), 2690(2740) nm for ZnSe(ZnS) crystals, respectively. The calculated absorption cross-sections of the above transitions were estimated to be 64(56)×1019, 7.5(7.8)×1019, and 0.52(0.49)×1019 cm2 for ZnSe(ZnS) crystal hosts. In addition to the above applications the cobalt ions could be utilized for excitation of Fe2+ ions via resonance energy transfer process. Tunable room temperature lasing of Fe 2+ doped binary and ternary chalcogenides has been successfully demonstrated over 3.5-6 μm spectral range. However, II-VI lasers based on Fe2+ active ions don't feature convenient commercially available pump sources (e.g. some Fe doped crystal hosts require pump wavelengths longer than 3 μm). Therefore, the process of energy transfer from Co2+ to Fe2+ ions could enable utilization of commercially available visible and near-infrared pump sources. We report a spectroscopic characterization of iron-cobalt co-doped ZnS and ZnSe crystals over 14-300K temperature range. Mid-IR laser oscillation at 3.9 μm(3.6 μm) via energy transfer in the Co:Fe:ZnSe (Co:Fe:ZnS) co-doped crystals was demonstrated under cobalt excitation at 4A2(F) → 4T1(P) (~0.7μm) and 4A2(F) → 4T1(F) (~1.56 μm) transitions.

  17. Nitrogen and sulfur co-doped TiO2 nanosheets with exposed {001} facets: synthesis, characterization and visible-light photocatalytic activity.

    PubMed

    Xiang, Quanjun; Yu, Jiaguo; Jaroniec, Mietek

    2011-03-21

    Nitrogen and sulfur co-doped TiO(2) nanosheets with exposed {001} facets (N-S-TiO(2)) were prepared by a simple mixing-calcination method using the hydrothermally prepared TiO(2) nanosheets powder as a precursor and thiourea as a dopant. The resulting samples were characterized by transmission electron microscope, X-ray diffraction, N(2) adsorption-desorption isotherms, X-ray photoelectron spectroscopy, and UV-Vis absorption spectroscopy. The electronic properties of N,S co-doped TiO(2) were studied using the first-principle density functional theory (DFT). The photocatalytic activity of N-S-TiO(2) was evaluated by degradation of 4-chlorophenol (4-CP) aqueous solution under visible light irradiation. The production of hydroxyl radicals (˙OH) on the surface of visible-light-irradiated samples was detected by photoluminescence technique using terephthalic acid as a probe molecule. The results show that nitrogen and sulfur atoms were successfully incorporated into the lattice of TiO(2), which resulted in N-S-TiO(2) samples exhibiting stronger absorption in the UV-visible range with a red shift in the band gap transition. The first-principle DFT calculations further confirm that N and S co-dopants can induce the formation of new energy levels in the band gap, which is associated with the response of N-S-TiO(2) nanosheets to visible light irradiation. Surprisingly, pure TiO(2) nanosheets show the visible-light photocatalytic activity for the degradation of 4-CP mainly due to the substrate-surface complexation of TiO(2) and 4-CP, which results in extending absorption of titania to visible light region through ligand-to-titanium charge transfer. The N-S-TiO(2) samples studied exhibited an enhanced visible-light photocatalytic activity than pure TiO(2). Especially, the doped TiO(2) sample at the nominal weight ratio of thiourea to TiO(2) powder of 2 showed the highest photocatalytic activity, which was about twice greater than that of Degussa P25. The enhanced activity of

  18. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well

    NASA Astrophysics Data System (ADS)

    Zhu, Laipan; Liu, Yu; Gao, Hansong; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2014-09-01

    We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling.

  19. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well

    PubMed Central

    2014-01-01

    We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling. PMID:25258612

  20. Bamboo leaf-assisted formation of carbon/nitrogen co-doped anatase TiO2 modified with silver and graphitic carbon nitride: novel and green synthesis and cooperative photocatalytic activity.

    PubMed

    Jiang, Zhifeng; Liu, Dong; Jiang, Deli; Wei, Wei; Qian, Kun; Chen, Min; Xie, Jimin

    2014-09-28

    We report a novel synthesis approach employing bamboo leaves as sources of both the C/N dopant and reductant to the formation of C/N co-doped TiO2 modified with Ag and g-C3N4 (Ag/CN-TiO2@g-C3N4). In this case, the ternary composite has a hierarchical structure and a large surface area, which increases the contact area of reactants. Degradation of rhodamine B (RhB) and hydrogen generation were carried out to evaluate the photocatalytic activity of as-prepared samples under visible light irradiation. It is found that with respect to single and binary catalysts, the Ag/CN-TiO2@g-C3N4 ternary composite shows the highest photocatalytic activity (degradation of RhB, H2 evolution from water splitting) as a result of the fast generation, separation and transportation of the photogenerated carriers, which was evidenced by photoluminescence measurements and free radical/hole scavenging experiments. At last, a possible photocatalytic mechanism under visible light irradiation was proposed. The novel and green synergistic approach presented here could provide a facile yet effective method for designing other visible light active non-metal co-doped TiO2 based photocatalysts with enhanced activity and high chemical stability.

  1. Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering.

    PubMed

    Han, HyukSu; Dufour, Pascal; Mhin, Sungwook; Ryu, Jeong Ho; Tenailleau, Christophe; Guillemet-Fritsch, Sophie

    2015-07-14

    Nb and In co-doped rutile TiO2 nanoceramics (n-NITO) were successfully synthesized through a chemical-solution route combined with a low temperature spark plasma sintering (SPS) technique. The particle morphology and the microstructure of n-NITO compounds were nanometric in size. Various techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG)/differential thermal analysis (DTA), Fourier transform infrared (FTIR), and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compound. The results indicated that the as-synthesized n-NITO oxalate as well as sintered ceramic have a co-doped single phase of titanyl oxalate and rutile TiO2, respectively. Broadband impedance spectroscopy revealed that novel colossal permittivity (CP) was achieved in n-NITO ceramics exhibiting excellent temperature-frequency stable CP (up to 10(4)) as well as low dielectric loss (∼5%). Most importantly, detailed impedance data analyses of n-NITO compared to microcrystalline NITO (μ-NITO) demonstrated that the origin of CP in NITO bulk nanoceramics might be related with the pinned electrons in defect clusters and not to extrinsic interfacial effects.

  2. Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Huber, Martin; Silvestri, Marco; Knuuttila, Lauri; Pozzovivo, Gianmauro; Andreev, Andrei; Kadashchuk, Andrey; Bonanni, Alberta; Lundskog, Anders

    2015-07-01

    Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the CN ON complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ˜0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.

  3. AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

    NASA Astrophysics Data System (ADS)

    Gregušová, D.; Stoklas, R.; Čičo, K.; Lalinský, T.; Kordoš, P.

    2007-08-01

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with 4 nm thick Al2O3 gate oxide were prepared and their performance was compared with that of AlGaN/GaN HFETs. The MOSHFETs yielded ~40% increase of the saturation drain current compared with the HFETs, which is larger than expected due to the gate oxide passivation. Despite a larger gate-channel separation in the MOSHFETs, a higher extrinsic transconductance than that of the HFETs was measured. The drift mobility of the MOSHFETs, evaluated on large-gate FET structures, was significantly higher than that of the HFETs. The zero-bias mobility for MOSHFETs and HFETs was 1950 cm2 V-1 s-1 and 1630 cm2 V-1 s-1, respectively. These features indicate an increase of the drift velocity and/or a decrease of the parasitic series resistance in the MOSHFETs. The current collapse, evaluated from pulsed I-V measurements, was highly suppressed in the MOSHFETs with 4 nm thick Al2O3 gate oxide. This result, together with the suppressed frequency dispersion of the capacitance, indicates that the density of traps in the Al2O3/AlGaN/GaN MOSHFETs was significantly reduced.

  4. Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

    SciTech Connect

    Huber, Martin; Silvestri, Marco; Knuuttila, Lauri; Pozzovivo, Gianmauro; Andreev, Andrei; Lundskog, Anders; Kadashchuk, Andrey; Bonanni, Alberta

    2015-07-20

    Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the C{sub N} O{sub N} complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ∼0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.

  5. Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing

    SciTech Connect

    Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.T.; Dumitrescu, M.; Pessa, M.

    2005-10-15

    We have studied the effects of growth temperature and subsequent thermal annealing on nitrogen incorporation into lattice-matched dilute Ga{sub 0.942}In{sub 0.058}NAs-on-GaAs epilayers, which were grown by the molecular-beam epitaxy method. The samples were studied experimentally by means of x-ray diffraction and Raman spectroscopy and theoretically by calculations within the density-functional theory. Over the entire range of growth temperatures applied (410-470 deg. C), nitrogen appeared to be mainly located on substitutional sites in 'short-range-order clusters' as N-Ga{sub 4} and, to a lesser extent, as N-Ga{sub 3}In. There were also indications of the presence of nitrogen dimers NN, as suggested by Raman spectroscopy, in qualitative agreement with the calculations. An increase in growth temperature reduced the amount of substitutional nitrogen and decreased the number of N-Ga{sub 4} clusters relative to N-Ga{sub 3}In. Postgrowth thermal annealing promoted the formation of In-N bonds and caused a blueshift in the optical band gap, which increased as the growth temperature was lowered.

  6. Perpendicular magnetic anisotropy in Co2MnGa and its anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Ludbrook, B. M.; Ruck, B. J.; Granville, S.

    2017-02-01

    We report perpendicular magnetic anisotropy in the ferromagnetic Heusler alloy Co2MnGa in a MgO/Co2MnGa/Pd trilayer stack for Co2MnGa thicknesses up to 3.5 nm. There is a thickness- and temperature-dependent spin reorientation transition from perpendicular to in-plane magnetic anisotropy, which we study through the anomalous Hall effect. From the temperature dependence of the anomalous Hall effect, we observe the expected scaling of ρx y A H E with ρxx, suggesting that the intrinsic and side-jump mechanisms are largely responsible for the anomalous Hall effect in this material.

  7. Ab initio study of effect of Co substitution on the magnetic properties of Ni and Pt-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Roy, Tufan; Chakrabarti, Aparna

    2017-04-01

    Using density functional theory based calculations, we have carried out in-depth studies of effect of Co substitution on the magnetic properties of Ni and Pt-based shape memory alloys. We show the systematic variation of the total magnetic moment, as a function of Co doping. A detailed analysis of evolution of Heisenberg exchange coupling parameters as a function of Co doping has been presented here. The strength of RKKY type of exchange interaction is found to decay with the increase of Co doping. We calculate and show the trend, how the Curie temperature of the systems vary with the Co doping.

  8. Enhanced visible-light absorption of mesoporous TiO2 by co-doping with transition-metal/nitrogen ions

    SciTech Connect

    Mathis, John; Bi, Zhonghe; Bridges, Craig A; Kidder, Michelle; Paranthaman, Mariappan Parans

    2013-01-01

    Titanium (IV) oxide, TiO2, has been the object of intense scrutiny for energy applications. TiO2 is inexpensive, non-toxic, and has excellent corrosion resistance when exposed to electrolytes. A major drawback preventing the widespread use TiO2 for photolysis is its relatively large band gap of ~3eV. Only light with wavelengths shorter than 400 nm, which is in the ultraviolet portion of the spectrum, has sufficient energy to be absorbed. Less than 14 percent of the solar irradiation reaching the earth s surface has energy exceeding this band gap. Adding dopants such as transition metals has long been used to reduce the gap and increase photocatalytic activity by accessing the visible part of the solar spectrum. The degree to which the band gap is reduced using transition metals depends in part on the overlap of the d-orbitals of the transition metals with the oxygen p-orbitals. Therefore, doping with anions such as nitrogen to modify the cation-anion orbital overlap is another approach to reduce the gap. Recent studies suggest that using a combination of transition metals and nitrogen as dopants is more effective at introducing intermediate states within the band gap, effectively narrowing it. Here we report the synthesis of mesoporous TiO2 spheres, co-doped with transition metals and nitrogen that exhibit a nearly flat absorbance response across the visible spectrum extending into the near infrared.

  9. On the Luminescence Enhancement of Mn2+ By Co-doping of Eu2+ in ZnS:Mn,Eu

    SciTech Connect

    Hossu, Marius; Schaeffer, Roger O.; Ma, Lun; Chen, Wei; Zhu, Yongbin; Sammynaiken, Ramaswami; Joly, Alan G.

    2013-06-01

    The photoluminescence and X-ray luminescence of ZnS:Mn, ZnS:Mn,Eu and ZnS:Eu were investigated and it was found that the luminescence intensity of Mn2+ in ZnS:Mn,Eu co-doped phosphors is highly dependent on the doping concentration of Eu2+. At the optimized Eu2+concentration (0.2%), the photoluminescence of Mn2+ shows about a 5.5 times enhancement and its X-ray luminescence is enhanced by a factor of 2.5. Both wurtzite and zinc blend phases are present in the samples with wurtzite phase dominant. Co-doping of Eu2+ into ZnS:Mn does not change appreciably the ratio of the two phases or the Mn2+ emission luminescence lifetime; however, the doping of Eu2+ into ZnS:Mn does change the phonon activity. Furthermore, it was found that the defect-related blue emission of ZnS:Eu overlaps with the excitation bands of Mn2+ in ZnS:Mn and there is likely energy transfer from these defect states to Mn2+ in ZnS:Mn,Eu. This energy transfer and the phonon modification are considered to be the two main reasons for the luminescence enhancement and the intensity dependence of Mn2+ emission on Eu2+ doping concentration in ZnS:Mn,Eu.

  10. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction.

    PubMed

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-11-16

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21(th) harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies.

  11. The origin of ferromagnetism of Co-doped TiO2 nanoparticles: Experiments and theory investigation

    NASA Astrophysics Data System (ADS)

    Zhang, Suyin; Zhou, Zhongpo; Xiong, Rui; Shi, Jing; Lu, Zhihong; Wang, Haiying

    2016-11-01

    A series of Ti1-xCoxO2-δ (x = 0.01, 0.03, 0.05, 0.07) nanoparticles were synthesized by sol-gel method. The X-ray diffraction, transmission electron microscopy, Raman analysis and X-ray photoelectron spectroscopy ruled out the signatures of Ti3+, Co-clusters or any other oxides of Co. The ferromagnetic behavior was clearly observed at room temperature in doped samples with saturation magnetization (Ms) of the order of 0.008-0.035 emu/g depending on doping concentrations. The saturation magnetization is found to be increased with the Co contents increasing from 1% to 7%. From the plot of the M-T curve, we obtain the Tc as ˜515 K for 5% Co-doped TiO2. Oxygen vacancies were detected from the photoluminescence (PL) measurement. Magnetic properties analyses and PL analyses showed that oxygen vacancies probably played a major role in ferromagnetism of the Ti1-xCoxO2 system with Co substituting for Ti. The first-principles calculation was performed to investigate the magnetic properties of Co-doped TiO2 nanoparticles. It can be found that the major magnetic moment is from the 3d electron of Co. The experiment results are consistent with the first-principles calculation. The ferromagnetism derived from the spin-split of O-2p and Co-3d electron states caused by p-d orbit hybridization.

  12. Growth and photorefractive properties of Mg, Fe co-doped near-stoichiometric lithium tantalate single crystals

    NASA Astrophysics Data System (ADS)

    Hsu, W. T.; Chen, Z. B.; You, C. A.; Huang, S. W.; Liu, J. P.; Lan, C. W.

    2010-07-01

    Mg, Fe co-doped near-stoichiometric lithium tantalate (SLT) crystals were successfully grown by the zone-leveling Czochralski (ZLCz) technique and the holographic properties were measured by the two-beam coupling method. The fundamental optical properties of crystals were measured by employing the UV-vis-NIR spectrometer and Fourier transformation infrared spectrophotometer as well. By the chemical analysis, the Li/Ta, Mg/Ta and Fe/Ta ratios of the crystals were obtained and the Li/Ta ratios of the crystals were all close to the theoretical limitation of 0.98. In the holographic properties, the recording time constant, erasing time constant, dynamic range, and sensitivity decreased with light intensity; but the maximum diffraction efficiency showed an opposite trend. Furthermore, the diffraction efficiency, dynamic range and sensitivity of the crystals were improved with a relatively higher Fe/Ta ratio. In comparison with Mn-LT crystals, the Mg, Fe co-doped SLT crystal showed the superior photorefractive properties indicating that it could be a promising new material for lifetime holographic data storage.

  13. Colour emission tunability in Ho3+-Tm3+-Yb3+ co-doped Y2O3 upconverted phosphor

    NASA Astrophysics Data System (ADS)

    Pandey, Anurag; Rai, Vineet Kumar

    2012-12-01

    The frequency upconversion (UC) emission throughout the visible region from the Y2O3:Ho3+-Tm3+-Yb3+ co-doped phosphors synthesized by using low temperature combustion process upon excitation with a diode laser operating at 980 nm have been presented. The colour emission tunability in co-doped phosphor has been observed on increasing the pump power and seen by the naked eyes. The tunability in colour emission has also been visualized by CIE chromaticity diagram. The variation in UC emission intensity of the 1G4 → 3H6 (Tm3+) and 5F3 → 5I8 (Ho3+) transitions lying in the blue region has been monitored with increase in the pump power and marked that their ratio can be used to determine the temperature. The developed phosphor has been used to record fingerprints. The observed most intense visible colour emission from the developed material may be used for photodynamic therapy and as an alternative of traditional fluorescent biolabels.

  14. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    PubMed Central

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  15. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging

    NASA Astrophysics Data System (ADS)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-04-01

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells. Electronic supplementary information (ESI) available: Supplementary figures related to characterization, computational studies and protein conjugation. See DOI: 10.1039/c5nr01519g

  16. Efficient 2 μm emission in Nd3+/Ho3+ co-doped silicate-germanate glass pumped by common 808 nm LD

    NASA Astrophysics Data System (ADS)

    Chen, Rong; Tian, Ying; Li, Bingpeng; Huang, Feifei; Wang, Caizhi; Jing, Xufeng; Zhang, Junjie; Xu, Shiqing

    2017-03-01

    Nd3+/Ho3+ co-doped silicate-germanate glass has been synthesized by high temperature melt-quenching method. Near infrared emission centered at 2 μm has been successfully obtained by incorporating Nd3+ and Ho3+ in present glass. The Judd-Ofelt intensity parameters Ωt (t=2, 4, 6), and radiative properties of Ho3+ were calculated and discussed by using the Judd-Ofelt theory. The energy transfer processes and luminescence properties of Nd3+/Ho3+ co-doped glasses were analyzed pumped by a conventional 808 nm laser diode. Desirable spectroscopic characteristics indicates that Nd3+/Ho3+ co-doped silicate-germanate glass might be a good alternative matrix for 2 μm band mid-infrared laser.

  17. The ferromagnetic shape-memory effect in Ni Mn Ga

    NASA Astrophysics Data System (ADS)

    Marioni, M. A.; O'Handley, R. C.; Allen, S. M.; Hall, S. R.; Paul, D. I.; Richard, M. L.; Feuchtwanger, J.; Peterson, B. W.; Chambers, J. M.; Techapiesancharoenkij, R.

    2005-04-01

    Active materials have long been used in the construction of sensors and devices. Examples are piezo-electric ceramics and shape memory alloys. The more recently developed ferromagnetic shape-memory alloys (FSMAs) have received considerable attention due to their large magnetic field-induced, reversible strains (up to 10%). In this article, we review the basic physical characteristics of the FSMA Ni-Mn-Ga (crystallography, thermal, mechanical and magnetic behavior). Also, we present some of the works currently under way in the areas of pulse-field and acoustic-assisted actuation, and vibration energy absorption.

  18. Effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well by Shubnikov-de Haas oscillations

    NASA Astrophysics Data System (ADS)

    Kawamata, Shuichi; Hibino, Akira; Tanaka, Sho; Kawamura, Yuichi

    2016-10-01

    In order to develop optical devices for 2-3 μm wavelength regions, the InP-based InGaAs/GaAsSb type II multiple quantum well system has been investigated. By doping nitrogen into InGaAs layers, the system becomes effective in creating the optical devices with a longer wavelength. In this report, electrical transport properties are reported on the InGaAsN/GaAsSb type II system. The epitaxial layers with the single hetero or multiple quantum well structure on InP substrates are grown by the molecular beam epitaxy. The electrical resistance of samples with different nitrogen concentrations has been measured as a function of the magnetic field up to 9 Tesla at several temperatures between 2 and 6 K. The oscillation of the resistance due to the Shubnikov-de Haas (SdH) effect has been observed at each temperature. The effective mass is obtained from the temperature dependence of the amplitude of the SdH oscillations. The value of the effective mass increases from 0.048 for N = 0.0% to 0.062 for N = 1.2 and 1.5% as the nitrogen concentration increases. The mass enhancement occurs with corresponding to the reduction of the bandgap energy. These results are consistent with the band anticrossing model.

  19. Donor and Acceptor States in GaAs-(Ga, Al)As Quantum Dots:. Effects of Hydrostatic Pressure and AN Intense Laser

    NASA Astrophysics Data System (ADS)

    Miguez, A.; Franco, R.; Silva-Valencia, J.

    We calculated the binding energies of shallow donors and acceptors in a spherical GaAs-Ga1-xAlx As quantum dot under the combined effect of isotropic hydrostatic pressure and an intense laser. We used a variational approach within the effective mass approximation. The binding energy was computed as a function of hydrostatic pressure, dot sizes and laser field amplitude. The results showed that the impurity binding energy increases with pressure and decreases with the laser field amplitude when other parameters are fixed. We also found that the pressure effects are more dramatic for donor than acceptor impurities, especially for quantum dots with small radii.

  20. Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors

    NASA Astrophysics Data System (ADS)

    Khan, H. A.; Rezazadeh, A. A.

    2011-09-01

    An optically generated kink observed in the Gummel plot of AlGaAs/GaAs single heterojunction phototransistors (sHPTs) is reported when illuminated with relatively high optical powers. The observed sudden rise in collector current and decrease in the base current, referred to as `optical kink effect', is carefully studied and analyzed. The measurements are performed for incident optical power of up to 225 μW at an incident wavelength of 635 nm. This rise in the current gain of HPTs, in three terminal configuration, is associated with the base-collector space-charge modulation similar to the kirk effect.