Characterizations of GaN film growth by ECR plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fu, Silie; Chen, Junfang; Zhang, Hongbin; Guo, Chaofen; Li, Wei; Zhao, Wenfen

2009-06-01

The electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition technology (ECR-MOPECVD) is adopted to grow GaN films on (0 0 0 1) α-Al2O3 substrate. The gas sources are pure N2 and trimethylgallium (TMG). Optical emission spectroscopy (OES) and thermodynamic analysis of GaN growth are applied to understand the GaN growth process. The OES of ECR plasma shows that TMG is significantly dissociated in ECR plasma. Reactants N and Ga in the plasma, obtained easily under the self-heating condition, are essential for the GaN growth. They contribute to the realization of GaN film growth at a relatively low temperature. The thermodynamic study shows that the driving force for the GaN growth is high when N2:TMG>1. Furthermore, higher N2:TMG flow ratio makes the GaN growth easier. Finally, X-ray diffraction, photoluminescence, and atomic force microscope are applied to investigate crystal quality, morphology, and roughness of the GaN films. The results demonstrate that the ECR-MOPECVD technology is favorable for depositing GaN films at low temperatures.

Tiedown Bracket

NASA Technical Reports Server (NTRS)

Mashburn, D.; Wald, J. E.; Helmsin, F. K.

1982-01-01

Tiedown bracket secured to concrete slab with lag anchor and lag bolt. A trailer or other heavy equipment can be anchored by tethering it to strapping bolt. When bracket is no longer needed, it can be removed, leaving behind only lag anchor. Bracket is easily installed and removed without damage to concrete slab.

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

PubMed

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

NASA Astrophysics Data System (ADS)

Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

2018-05-01

GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Lee, Ching Ting; Chang, Edward Yi

2018-05-01

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

PGI Bracket Positioner: A Novel Combination of Reverse Bracket Tweezer and Positioning Gauze.

PubMed

Singh, Sombir; Verma, Sanjeev; Bhupali, Nameksh Raj; Singh, Satinder Pal

2018-01-01

The accurate bracket positioning is essential for the expression of the bracket system that affects the treatment outcome considerably and is also essential for good functional occlusion as well as facial esthetics. The proper alignment cannot be achieved without proper bracket positioning. Thus, the brackets positioning devices are an integral part of orthodontic armamentarium. Here, we present a new innovation that provides a unique combination of reverse bracket tweezer and positioner and hence is very helpful in precise vertical positioning of brackets with increased efficiency.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Torque expression in self-ligating orthodontic brackets and conventionally ligated brackets: A systematic review

PubMed Central

Al-Thomali, Yousef; Mohamed, Roshan-Noor; Basha, Sakeenabi

2017-01-01

Background To evaluate the torque expression of self ligating (SL) orthodontic brackets and conventionally ligated brackets and the torque expression in active and passive SL brackets. Material and Methods Our systematic search included MEDLINE, EMBASE, CINAHL, PsychINFO, Scopus, and key journals and review articles; the date of the last search was April 4th 2016. We graded the methodological quality of the studies by means of the Quality Assessment Tool for Quantitative Studies, developed for the Effective Public Health Practice Project (EPHPP). Results In total, 87 studies were identified for screening, and 9 studies were eligible. The quality assessment rated one of the study as being of strong quality, 7 (77.78%) of these studies as being of moderate quality. Three out of 7 studies which compared SL and conventionally ligated brackets showed, conventionally ligated brackets with highest torque expression compared to SL brackets. Badawi showed active SL brackets with highest torque expression compared to passive SL brackets. Major and Brauchli showed no significant differences in torque expression of active and passive SL brackets. Conclusions Conventionally ligated brackets presented with highest torque expression compared to SL brackets. Minor difference was recorded in a torque expression of active and passive SL brackets. Key words:Systematic review, self ligation, torque expression, conventional ligation. PMID:28149476

Torque expression in self-ligating orthodontic brackets and conventionally ligated brackets: A systematic review.

PubMed

Al-Thomali, Yousef; Mohamed, Roshan-Noor; Basha, Sakeenabi

2017-01-01

To evaluate the torque expression of self ligating (SL) orthodontic brackets and conventionally ligated brackets and the torque expression in active and passive SL brackets. Our systematic search included MEDLINE, EMBASE, CINAHL, PsychINFO, Scopus, and key journals and review articles; the date of the last search was April 4th 2016. We graded the methodological quality of the studies by means of the Quality Assessment Tool for Quantitative Studies, developed for the Effective Public Health Practice Project (EPHPP). In total, 87 studies were identified for screening, and 9 studies were eligible. The quality assessment rated one of the study as being of strong quality, 7 (77.78%) of these studies as being of moderate quality. Three out of 7 studies which compared SL and conventionally ligated brackets showed, conventionally ligated brackets with highest torque expression compared to SL brackets. Badawi showed active SL brackets with highest torque expression compared to passive SL brackets. Major and Brauchli showed no significant differences in torque expression of active and passive SL brackets. Conventionally ligated brackets presented with highest torque expression compared to SL brackets. Minor difference was recorded in a torque expression of active and passive SL brackets. Key words: Systematic review, self ligation, torque expression, conventional ligation.

Structural and electrical characteristics of CoGe(2) alloy films deposited heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, Kevin Edward

The partially ionized beam deposition system was utilized to deposit CoGesb2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. The CoGesb2 films were structurally characterized using conventional 2theta diffraction, reflection X-ray pole figure analysis, and alpha particle channeling techniques. Three distinct crystallographic relationships of the CoGesb2 films to the GaAs(100) substrates were observed, dependent upon the substrate temperature and Gesp+ ion energy used during deposition. The CoGesb2(001) (100)sp°GaAs(100) (001) orientation, which has the smallest lattice mismatch to GaAs(100), was found to occur for depositions performed at a substrate temperature during deposition near 280sp°C with approximately 1160 eV Gesp+ ions. Lowering the substrate temperature or reducing the Gesp+ ion energy results in CoGesb2(100) orientation domination with CoGe2(100) (010)sp°GaAs(100) (001) and CoGesb2(100) (001)sp°GaAs(100) (001). Substrate temperature alone was seen to produce only the CoGesb2(100) orientation. For CoGesb2(001) films, additional energy was required from Gesp+ ions in the evaporant stream. Angular yield profiles for axial Hesp{++} ion channeling yielded values for the minimum yield, Ysb{min}, of 25% for the CoGesb2(001) orientation and 34% for the CoGesb2(100) orientation. The critical angle for channeling, Psisb{c}, was measured to be 1.0sp° for both orientations. Channeling theory was used to predict the minimum yield and critical angle for each orientation. The theoretical values agreed qualitatively with the experimentally measured values, and the theory correctly predicted the lower minimum yield for the CoGesb2(001) orientation. Annealing the films to allow for epitaxial grain growth resulted in orientation selection of CoGesb2(001) at the expense of CoGesb2(100), exposing CoGesb2(100) as a metastable orientation. The CoGesb2(001) films were stable up to 500sp°C, 30 minute anneals, showing no orientation changes

Frictional resistance of self-ligating versus conventional brackets in different bracket-archwire-angle combinations

PubMed Central

MONTEIRO, Maria Regina Guerra; da SILVA, Licinio Esmeraldo; ELIAS, Carlos Nelson; VILELLA, Oswaldo de Vasconcellos

2014-01-01

Objective To compare the influence of archwire material (NiTi, beta-Ti and stainless steel) and brackets design (self-ligating and conventional) on the frictional force resistance. Material and Methods Two types of brackets (self-ligating brackets - Smartclip, 3M/Unitek - and conventional brackets - Gemini, 3M/Unitek) with three (0, 5, and 10 degrees) slot angulation attached with elastomeric ligatures (TP Orthodontics) were tested. All brackets were tested with archwire 0.019"x0.025" nickel-titanium, beta-titanium, and stainless steel (Unitek/3M). The mechanical testing was performed with a universal testing machine eMIC DL 10000 (eMIC Co, Brazil). The wires were pulled from the bracket slots at a cross-head speed of 3 mm/min until 2 mm displacement. Results Self-ligating brackets produced significantly lower friction values compared with those of conventional brackets. Frictional force resistance values were directly proportional to the increase in the bracket/ wire angulation. With regard to conventional brackets, stainless steel wires had the lowest friction force values, followed by nickel-titanium and beta-titanium ones. With regard to self-ligating brackets, the nickel-titanium wires had the lowest friction values, significantly lower than those of other materials. Conclusion even at different angulations, the self-ligating brackets showed significantly lower friction force values than the conventional brackets. Combined with nickel-titanium wires, the self-ligating brackets exhibit much lower friction, possibly due to the contact between nickel-titanium clips and wires of the same material. PMID:25025564

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2009-07-01

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

NASA Astrophysics Data System (ADS)

Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

2018-01-01

We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

Universal Cable Brackets

NASA Technical Reports Server (NTRS)

Vanvalkenburgh, C.

1985-01-01

Concept allows routing easily changed. No custom hardware required in concept. Instead, standard brackets cut to length and installed at selected locations along cable route. If cable route is changed, brackets simply moved to new locations. Concept for "universal" cable brackets make it easy to route electrical cable around and through virtually any structure.

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lee, H. C.; Hariz, A.; Dapkus, P. D.; Kost, A.; Kawase, M.

1987-01-01

This paper reports the study of growth conditions for achieving the sharp exciton resonances and low-intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/sq cm is reported.

Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

2018-05-01

The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

PubMed

Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

2016-09-02

Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR CVD plasma

NASA Astrophysics Data System (ADS)

Manera, L. T.; Zoccal, L. B.; Diniz, J. A.; Tatsch, P. J.; Doi, I.

2008-07-01

In this paper we have developed a passivation technique with silicon-nitride (SiN X) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by ECR-CVD (electron cyclotron resonance-chemical vapor deposition) directly over InGaP/GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Optical emission spectrometry (OES) was used for plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2.5 mTorr. These molecules can degrade III-V semiconductor surfaces due to the preferential loss of As or P and hydrogen incorporation at the substrate. The substrates were cleaned with organic solvents using a Sox-let distillate. The ECR depositions were carried out at a fixed substrate temperature of 20 °C, SiH 4/N 2 flow ratio of 1, Ar flow of 5 sccm pressure of 2.5 mTorr and microwave (2.45 GHz) power of 250 W and RF (13.56 MHz) power of 4 W. We have applied this film for InGaP/GaAs HBT fabrication process with excellent results, where two major contribuiton is related to this passivation technique, the enhancement in the transistor dc gain β and the improvement in the signal-to-noise ratio when compared unpassivated and passivated devices.

Reduction in static friction by deposition of a homogeneous diamond-like carbon (DLC) coating on orthodontic brackets.

PubMed

Akaike, Shun; Hayakawa, Tohru; Kobayashi, Daishiro; Aono, Yuko; Hirata, Atsushi; Hiratsuka, Masanori; Nakamura, Yoshiki

2015-01-01

In orthodontics, a reduction in static friction between the brackets and wire is important to enable easy tooth movement. The aim of this study was to examine the effects of a homogeneous diamond-like carbon (DLC) coating on the whole surfaces of slots in stainless steel orthodontic brackets on reducing the static friction between the brackets and the wire. The DLC coating was characterized using Raman spectroscopy, surface roughness and contact angle measurements, and SEM observations. Rectangular stainless steel and titanium-molybdenum alloy wires with two different sizes were employed, and the static friction between the brackets and wire was measured under dry and wet conditions. The DLC coating had a thickness of approximately 1.0 μm and an amorphous structure was identified. The results indicated that the DLC coating always led to a reduction in static friction.

[Friction: self-ligating brackets].

PubMed

Thermac, Guilhem; Morgon, Laurent; Godeneche, Julien

2008-12-01

The manufacturers of self-ligating brackets advertise a reduction of the friction engendered between the wire and the bracket, which is an essential parameter for treatment's speed and comfort. We have compared the friction obtained with four types of self-ligating brackets - In-Ovation R, Damon 3, Smart Clip and Quick - with that of a standard bracket Omniarch associated with an elastomeric ligature. All bracket were tested on a bench of traction with three types of wires: steel .019"x.025", TMA .019"x.025" and NEO sentalloy F300 .020"x.020". The results confirm a clear friction reduction for all tested wire.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Khan, M. A.; Skogman, R. A.; van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Pei-Yu; Posadas, Agham B.; Kwon, Sunah; Wang, Qingxiao; Kim, Moon J.; Demkov, Alexander A.; Ekerdt, John G.

2017-12-01

Growth of crystalline Er2O3, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH4OH solutions and an in situ N2 plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry of 1.02. Using atomic layer deposition with erbium tris(isopropylcyclopentadienyl) [Er(iPrCp)3] and water, crystalline cubic Er2O3 (C-Er2O3) is grown on GaN at 250 °C. The orientation relationships between the C-Er2O3 film and the GaN substrate are C-Er2O3(222) ǁ GaN(0001), C-Er2O3⟨-440⟩ ǁ GaN ⟨11-20⟩, and C-Er2O3⟨-211⟩ ǁ GaN ⟨1-100⟩. Scanning transmission electron microscopy and electron energy loss spectroscopy are used to examine the microstructure of C-Er2O3 and its interface with GaN. With post-deposition annealing at 600 °C, a thicker interfacial layer is observed, and two transition layers, crystalline GaNwOz and crystalline GaErxOy, are found between GaN and C-Er2O3. The tensile strain in the C-Er2O3 film is studied with x-ray diffraction by changes in both out-of-plane and in-plane d-spacing. Fully relaxed C-Er2O3 films on GaN are obtained when the film thickness is around 13 nm. Additionally, a valence band offset of 0.7 eV and a conduction band offset of 1.2 eV are obtained using x-ray photoelectron spectroscopy.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon andmore » oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.« less

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

PubMed

Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

2013-03-25

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

Mechanical and shape memory properties of ferromagnetic Ni2MnGa sputter-deposited films

NASA Astrophysics Data System (ADS)

Ohtsuka, M.; Matsumoto, M.; Itagaki, K.

2003-10-01

The ternary intermetallic compound Ni2MnGa is an intelligent material, which has a shape memory effect and a ferromagnetic property. Use of shape memory alloy films for an actuator of micro machines is very attractive because of its large recovery force. The data of mechanical and shape memory properties of the films are required to use for the actuator. The purpose of this study is to investigate the effects of fabrication conditions and to clarify the relationships between these properties and fabrication conditions of the Ni{2}MnGa films. The Ni{2}MnGa films were deposited with a radio-frequency magnetron sputtering apparatus using a Ni{50}Mn{25}Ga{25} or Ni{52}Mn{24}Ga{24} target. After deposition, the films were annealed at 873sim 1173 K. The asdeposited films were crystalline and had columnar grains. After the heat treatment, the grains widened and the grain boundary became indistinct with increasing heat treatment temperature. MnO and Ni{3} (Mn, Ga) precipitations were observed in the heat-treated films. The mechanical properties of the films were measured by the nanoindentation method. Hardness and elastic modulus of as-deposited films were larger than those of arcmelted bulk alloys. The hardness of the films was affected by the composition, crystal structure, microstructure and precipitation, etc. The elastic modulus of the films was also changed with the heat treatment conditions. The heat-treated films showed a thermal two-way shape memory effect.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

NASA Astrophysics Data System (ADS)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Three-dimensional deformation of orthodontic brackets

PubMed Central

Melenka, Garrett W; Nobes, David S; Major, Paul W

2013-01-01

Braces are used by orthodontists to correct the misalignment of teeth in the mouth. Archwire rotation is a particular procedure used to correct tooth inclination. Wire rotation can result in deformation to the orthodontic brackets, and an orthodontic torque simulator has been designed to examine this wire–bracket interaction. An optical technique has been employed to measure the deformation due to size and geometric constraints of the orthodontic brackets. Images of orthodontic brackets are collected using a stereo microscope and two charge-coupled device cameras, and deformation of orthodontic brackets is measured using a three-dimensional digital image correlation technique. The three-dimensional deformation of orthodontic brackets will be evaluated. The repeatability of the three-dimensional digital image correlation measurement method was evaluated by performing 30 archwire rotation tests using the same bracket and archwire. Finally, five Damon 3MX and five In-Ovation R self-ligating brackets will be compared using this technique to demonstrate the effect of archwire rotation on bracket design. PMID:23762201

Three-dimensional deformation of orthodontic brackets.

PubMed

Melenka, Garrett W; Nobes, David S; Major, Paul W; Carey, Jason P

2013-01-01

Braces are used by orthodontists to correct the misalignment of teeth in the mouth. Archwire rotation is a particular procedure used to correct tooth inclination. Wire rotation can result in deformation to the orthodontic brackets, and an orthodontic torque simulator has been designed to examine this wire-bracket interaction. An optical technique has been employed to measure the deformation due to size and geometric constraints of the orthodontic brackets. Images of orthodontic brackets are collected using a stereo microscope and two charge-coupled device cameras, and deformation of orthodontic brackets is measured using a three-dimensional digital image correlation technique. The three-dimensional deformation of orthodontic brackets will be evaluated. The repeatability of the three-dimensional digital image correlation measurement method was evaluated by performing 30 archwire rotation tests using the same bracket and archwire. Finally, five Damon 3MX and five In-Ovation R self-ligating brackets will be compared using this technique to demonstrate the effect of archwire rotation on bracket design.

Comparison of Frictional Forces Generated by a New Ceramic Bracket with the Conventional Brackets using Unconventional and Conventional Ligation System and the Self-ligating Brackets: An In Vitro Study.

PubMed

Pasha, Azam; Vishwakarma, Swati; Narayan, Anjali; Vinay, K; Shetty, Smitha V; Roy, Partha Pratim

2015-09-01

Fixed orthodontic mechanotherapy is associated with friction between the bracket - wire - ligature interfaces during the sliding mechanics. A sound knowledge of the various factors affecting the magnitude of friction is of paramount importance. The present study was done to analyze and compare the frictional forces generated by a new ceramic (Clarity Advanced) bracket with the conventional, (metal and ceramic) brackets using unconventional and conventional ligation system, and the self-ligating (metal and ceramic) brackets in the dry condition. The various bracket wire ligation combinations were tested in dry condition. The brackets used were of 0.022″ × 0.028″ nominal slot dimension of MBT prescription: Stainless steel (SS) self-ligating bracket (SLB) of (SmartClip), SS Conventional bracket (CB) (Victory series), Ceramic SLB (Clarity SL), Conventional Ceramic bracket with metal slot (Clarity Bracket), Clarity Advanced Ceramic Brackets (Clarity(™) ADVANCED, 3M Unitek). These brackets were used with two types of elastomeric ligatures: Conventional Elastomeric Ligatures (CEL) (Clear medium mini modules) and Unconventional Elastomeric Ligatures (UEL) (Clear medium slide ligatures, Leone orthodontic products). The aligning and the retraction wires were used, i.e., 0.014″ nickel titanium (NiTi) wires and 0.019″ × 0.025″ SS wires, respectively. A universal strength testing machine was used to measure the friction produced between the different bracket, archwires, and ligation combination. This was done with the use of a custom-made jig being in position. Mean, standard deviation, and range were computed for the frictional values obtained. Results were subjected to statistical analysis through ANOVA. The frictional resistance observed in the new Clarity Advanced bracket with a conventional elastomeric ligature was almost similar with the Clarity metal slot bracket with a conventional elastomeric ligature. When using the UEL, the Clarity Advanced bracket

Evaluation of mechanical properties of esthetic brackets

PubMed Central

Umezaki, Eisaku; Komazawa, Daigo; Otsuka, Yuichiro; Suda, Naoto

2015-01-01

Plastic brackets, as well as ceramic brackets, are used in various cases since they have excellent esthetics. However, their mechanical properties remain uncertain. The purpose of this study was to determine how deformation and stress distribution in esthetic brackets differ among materials under the same wire load. Using the digital image correlation method, we discovered the following: (1) the strain of the wings of plastic brackets is within 0.2% and that of ceramic and metal brackets is negligible, (2) polycarbonate brackets having a stainless steel slot show significantly smaller displacement than other plastic brackets, and (3) there is a significant difference between plastic brackets and ceramic and stainless steel brackets in terms of the displacement of the bracket wing. PMID:25755677

Evaluation of mechanical properties of esthetic brackets.

PubMed

Matsui, Shigeyuki; Umezaki, Eisaku; Komazawa, Daigo; Otsuka, Yuichiro; Suda, Naoto

2015-01-01

Plastic brackets, as well as ceramic brackets, are used in various cases since they have excellent esthetics. However, their mechanical properties remain uncertain. The purpose of this study was to determine how deformation and stress distribution in esthetic brackets differ among materials under the same wire load. Using the digital image correlation method, we discovered the following: (1) the strain of the wings of plastic brackets is within 0.2% and that of ceramic and metal brackets is negligible, (2) polycarbonate brackets having a stainless steel slot show significantly smaller displacement than other plastic brackets, and (3) there is a significant difference between plastic brackets and ceramic and stainless steel brackets in terms of the displacement of the bracket wing.

Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Agarwal, Anchal; Gupta, Chirag; Alhassan, Abdullah; Mates, Tom; Keller, Stacia; Mishra, Umesh

2017-11-01

An improvement in the suppression of surface riding of magnesium from p-GaN:Mg into subsequent layers was achieved via low temperature flow modulation epitaxy. In particular, the slope of the Mg concentration drop was reduced to 5 nm/dec for a growth temperature of 620 °C — the lowest value ever reported for metalorganic chemical vapor deposition. The electrical quality of the top layer was verified by creating a two-dimensional electron gas on top of the buried p-GaN layer, which exhibited a mobility of 1300 cm2 V-1 s-1. In addition, layers grown using flow modulation epitaxy were shown to block the propagation of Mg more efficiently than samples in which an ex situ wet etch was used.

The effects of silver coating on friction coefficient and shear bond strength of steel orthodontic brackets.

PubMed

Arash, Valiollah; Anoush, Keivan; Rabiee, Sayed Mahmood; Rahmatei, Manuchehr; Tavanafar, Saeid

2015-01-01

Aims of the present study was to measure frictional resistance between silver coated brackets and different types of arch wires, and shear bond strength of these brackets to the tooth. In an experimental clinical research 28 orthodontic brackets (standard, 22 slots) were coated with silver ions using electroplate method. Six brackets (coated: 3, uncoated: 3) were evaluated with Scanning Electron Microscopy and Atomic Force Microscopy. The amount of friction in 15 coated brackets was measured with three different kinds of arch wires (0.019 × 0.025-in stainless steel [SS], 0.018-in stainless steel [SS], 0.018-in Nickel-Titanium [Ni-Ti]) and compared with 15 uncoated steel brackets. In addition, shear bond strength values were compared between 10 brackets with silver coating and 10 regular brackets. Universal testing machine was used to measure shear bond strength and the amount of friction between the wires and brackets. SPSS 18 was used for data analysis with t-test. SEM and AFM results showed deposition of a uniform layer of silver, measuring 8-10 μm in thickness on bracket surfaces. Silver coating led to higher frictional forces in all the three types of arch wires, which was statistically significant in 0.019 × 0.025-in SS and 0.018-in Ni-Ti, but it did not change the shear bond strength significantly. Silver coating with electroplating method did not affect the bond strength of the bracket to enamel; in addition, it was not an effective method for decreasing friction in sliding mechanics. © Wiley Periodicals, Inc.

Bracket for photovoltaic modules

DOEpatents

Ciasulli, John; Jones, Jason

2014-06-24

Brackets for photovoltaic ("PV") modules are described. In one embodiment, a saddle bracket has a mounting surface to support one or more PV modules over a tube, a gusset coupled to the mounting surface, and a mounting feature coupled to the gusset to couple to the tube. The gusset can have a first leg and a second leg extending at an angle relative to the mounting surface. Saddle brackets can be coupled to a torque tube at predetermined locations. PV modules can be coupled to the saddle brackets. The mounting feature can be coupled to the first gusset and configured to stand the one or more PV modules off the tube.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Laser radiation bracket debonding

NASA Astrophysics Data System (ADS)

Dostálová, Tat'jana; Jelínková, Helena; Šulc, Jan; Koranda, Petr; Nemec, Michal; Racek, Jaroslav; Miyagi, Mitsunobu

2008-02-01

Ceramic brackets are an aesthetic substitute for conventional stainless steel brackets in orthodontic patients. However, ceramic brackets are more brittle and have higher bond strengths, which can lead to bracket breakage and enamel damage during classical type of debonding. This study examined the possibility of laser radiation ceramic brackets removing as well as the possible damage of a surface structure of hard dental tissue after this procedure. Two types of lasers were used for the experiments - a laser diode LIMO HLU20F400 generating a wavelength of 808 nm with the maximum output power 20W at the end of the fiber (core diameter 400 μm, numerical aperture 0.22). As a second source, a diode-pumped Tm:YAP laser system generating a wavelength of 1.9 μm, with up to 3.8 W maximum output power was chosen. For the investigation, extracted incisors with ceramic brackets were used. In both cases, laser radiation was applied for 0.5 minute at a maximum power of 1 W. Temperature changes of the irradiated tissue was registered by camera Electrophysics PV320. After the interaction experiment, the photo-documentation was prepared by the stereomicroscope Nikon SMZ 2T, Japan. The surface tissue analysis was processed in "low vacuum" (30 Pa) regime without desiccation. This technique was used to record back-scattered electron images. Selecting the appropriate laser, resin, and bracket combination can minimize risks of enamel degradation and make debonding more safe.

The influence of bracket design on frictional losses in the bracket/arch wire system.

PubMed

Schumacher, H A; Bourauel, C; Drescher, D

1999-01-01

In arch guided tooth movement, the essential role played by bracket configuration with respect to sliding friction has been recognized by the manufacturers, a fact which has had an increasing impact on the design and marketing of new bracket models in recent years. The aim of the present in-vitro study was to investigate the influence of different bracket designs on sliding mechanics. Five differently shaped stainless steel brackets (Discovery: Dentaurum, Damon SL: A-Company, Synergy: Rocky Mountain Orthodontics, Viazis bracket and Omni Arch appliance: GAC) were compared in the 0.022"-slot system. The Orthodontic Measurement and Simulation System (OMSS) was used to quantify the difference between applied force (NiTi coil spring, 1.0 N) and orthodontically effective force and to determine leveling losses occurring during the sliding process in arch guided tooth movement. Simulated canine retraction was performed using continuous arch wires with the dimensions 0.019" x 0.025" (Standard Steel, Unitek) and 0.020" x 0.020" (Ideal Gold, GAC). Comparison of the brackets revealed friction-induced losses ranging from 20 to 70%, with clear-cut advantages resulting from the newly developed bracket types. However, an increased tendency towards leveling losses in terms of distal rotation (maximum 15 degrees) or buccal root torque (maximum 20 degrees) was recorded, especially with those brackets giving the arch wire increased mobility due to their shaping or lack of ligature wire.

Orthodontic Bracket Manufacturing Tolerances and Dimensional Differences between Select Self-Ligating Brackets

PubMed Central

Major, Thomas W.; Carey, Jason P.; Nobes, David S.; Major, Paul W.

2010-01-01

In all manufacturing processes there are tolerances; however, orthodontic bracket manufacturers seldom state the slot dimensional tolerances. This experiment develops a novel method of analyzing slot profile dimensions using photographs of the slot. Five points are selected along each wall, and lines are fitted to define a trapezoidal slot shape. This investigation measures slot height at the slot's top and bottom, angles between walls, slot taper, and the linearity of each wall. Slot dimensions for 30 upper right central incisor self-ligating stainless steel brackets from three manufacturers were evaluated. Speed brackets have a slot height 2% smaller than the nominal 0.559 mm size and have a slightly convergent taper. In-Ovation brackets have a divergent taper at an average angle of 1.47 degrees. In-Ovation is closest to the nominal value of slot height at the slot base and has the smallest manufacturing tolerances. Damon Q brackets are the most rectangular in shape, with nearly 90-degree corners between the slot bottom and walls. Damon slot height is on average 3% oversized. PMID:20981299

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.

PubMed

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-12-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

NASA Astrophysics Data System (ADS)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeuchi, S., E-mail: takeuchi@ee.es.osaka-u.ac.jp; Asazu, H.; Nakamura, Y.

2015-12-28

We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration ofmore » the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE PAGES

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

2014-10-15

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

The effect of ZnO nanoparticle coating on the frictional resistance between orthodontic wires and ceramic brackets

PubMed Central

Behroozian, Ahmad; Kachoei, Mojgan; Khatamian, Masumeh; Divband, Baharak

2016-01-01

Background. Any decrease in friction between orthodontic wire and bracket can accelerate tooth movement in the sliding technique and result in better control of anchorage. This study was carried out to evaluate frictional forces by coating orthodontic wires and porcelain brackets with zinc oxide nanoparticles (ZnO). Methods. In this in vitro study, we evaluated a combination of 120 samples of 0.019×0.025 stainless steel (SS) orthodonticwires and 22 mil system edgewise porcelain brackets with and without spherical zinc oxide nanoparticles. Spherical ZnOnanoparticles were deposited on wires and brackets by immersing them in ethanol solution and SEM (scanning electronmicroscope) evaluation confirmed the presence of the ZnO coating. The frictional forces were calculated between the wiresand brackets in four groups: group ZZ (coated wire and bracket), group OO (uncoated wire and bracket), group ZO (coatedwire and uncoated bracket) and group OZ (uncoated wire and coated bracket). Kolmogorov-Smirnov, Mann-Whitney andKruskal-Wallis tests were used for data analysis. Results. The frictional force in ZZ (3.07±0.4 N) was the highest (P <0.05), and OZ (2.18±0.5 N) had the lowest amount of friction (P <0.05) among the groups. There was no significant difference in frictional forces between the ZO and OO groups (2.65±0.2 and 2.70±0.2 N, respectively). Conclusion. Coating of porcelain bracket surfaces with ZnO nanoparticles can decrease friction in the sliding technique,and wire coating combined with bracket coating is not recommended due to its effect on friction. PMID:27429727

Adhesive performance of precoated brackets after expiration.

PubMed

Cloud, Cayce C; Trojan, Terry M; Suliman, Sam N; Tantbirojn, Daranee; Versluis, Antheunis

2016-03-01

To evaluate adhesive performance in terms of debonding forces of precoated metal and ceramic brackets 4 years after expiration. Buccal and lingual surfaces of embedded extracted maxillary premolars were etched with 34% Tooth Conditioner Gel (Dentsply Caulk, Milford, Del), rinsed, and dried. Transbond MIP (3M Unitek, Monrovia, Calif) was applied prior to placing adhesive precoated brackets (APC II Victory stainless steel and APC Plus Clarity ceramic brackets, 3M Unitek). The preexpiration brackets had 29-35 months before, and the postexpiration brackets were 45-52 months past, their expiration dates. Sample size was 17-21 per group. Debonding forces were determined by subjecting the bonded brackets to a shear force in a universal testing machine. Debonding forces were compared using two-way ANOVA. Debonded surfaces were examined under a stereomicroscope to determine failure modes, which were compared using the chi-square test. No statistically significant difference was found in debonding forces (P  =  .8581) or failure modes (P  =  .4538) between expired and unexpired brackets. Metal brackets required statistically significantly higher debonding forces than did ceramic brackets (P  =  .0001). For both expired and unexpired brackets, failure modes were mostly cohesive in the adhesive layer for ceramic brackets, and mixed between adhesive and cohesive failure in the adhesive layer for metal brackets. Adhesive precoated brackets did not have any reduction in enamel-adhesion properties up to 4 years after their expiration date. Extended shelf life testing for precoated dental brackets may be worth considering.

Material testing of reconditioned orthodontic brackets.

PubMed

Reimann, S; Rewari, A; Keilig, L; Widu, F; Jäger, A; Bourauel, C

2012-12-01

While all manufacturers of orthodontic brackets label these products for single use, there are commercial providers offering bracket reconditioning (or "recycling"). We conducted this study to investigate the effects of different recycling techniques on material-related parameters in orthodontic brackets, aiming to derive indications for clinical use and conclusions about the biocompatibility, longevity, and application of recycled brackets. New metal brackets (equilibrium(®); Dentaurum, Ispringen, Germany) were compared to brackets recycled by different techniques, including direct flaming with a Bunsen burner, chemical reconditioning in an acid bath, a commercial unit (Big Jane; Esmadent, IL, USA), and outsourcing to a company (Ortho Clean, Dellstedt, Germany). Material-related examinations included the following: (1) corrosion behavior by static immersion testing and use of a mass spectrometer to determine nickel-ion concentrations in the corrosive medium, (2) surface features in scanning electron micrographs before and after corrosion testing, (3) Vickers hardness using a hardness testing machine, (4) shear bond strength as defined in DIN 13990-1, (5) dimensional stability of the bracket slots by light microscopy, and (6) frictional loss as assessed by an orthodontic measurement and simulation system (OMSS). Each examination was performed on ten brackets. Student's t-test was used for statistical analysis. Compared to the new brackets, those recycled in an acid bath or by a commercial provider revealed significant dimensional changes (p<0.05). Corrosion on the recycled brackets varied according to the recycling techniques employed. The group of brackets recycled by one company revealed hardness values that differed from those of all the other groups. No significant differences were observed in nickel-ion release, frictional loss, and shear bond strength. Recycling was found to significantly reduce the corrosion resistance and dimensional stability of

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si 3N 4

NASA Astrophysics Data System (ADS)

Cheng, Kai; Leys, M.; Derluyn, J.; Degroote, S.; Xiao, D. P.; Lorenz, A.; Boeykens, S.; Germain, M.; Borghs, G.

2007-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on 4 and 6 in Si(1 1 1) substrates by metal organic vapor phase epitaxy (MOVPE). A record sheet resistance of 256 Ω/□ has been measured by contactless eddy current mapping on 4 in silicon substrates. The wafer also shows an excellent uniformity and the standard variation is 3.6 Ω/□ over the whole wafer. These values were confirmed by Hall-Van der Pauw measurements. In the 2DEG at the AlGaN/GaN interface, the electron mobility is in the range of 1500-1800 cm 2/Vs and the electron density is between 1.3×10 13 and 1.7×10 13 cm -2. The key step in obtaining these results is an in-situ deposited Si 3N 4 passivation layer. This in-situ Si 3N 4, deposited directly after AlGaN top layer growth in the MOVPE reactor chamber, not only prevents the stress relaxation in AlGaN/GaN hetero-structures but also passivates the surface states of the AlGaN cap layer. HEMT transistors have been processed on the epitaxial structures and the maximum source-drain current density is 1.1 A/mm for a gate-source voltage of 2 V. The current collapse is minimized thanks to in-situ Si 3N 4. First results on AlGaN/GaN structures grown on 6 in Si(1 1 1) are also presented.

Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.

PubMed

Hou, Wen Chi; Hong, Franklin Chau-Nan

2009-02-04

This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 degrees C.

Structural support bracket for gas flow path

DOEpatents

None

2016-08-02

A structural support system is provided in a can annular gas turbine engine having an arrangement including a plurality of integrated exit pieces (IEPs) forming an annular chamber for delivering gases from a plurality of combustors to a first row of turbine blades. A bracket structure is connected between an IEP and an inner support structure on the engine. The bracket structure includes an axial bracket member attached to an IEP and extending axially in a forward direction. A transverse bracket member has an end attached to the inner support structure and extends circumferentially to a connection with a forward end of the axial bracket member. The transverse bracket member provides a fixed radial position for the forward end of the axial bracket member and is flexible in the axial direction to permit axial movement of the axial bracket member.

In0.15Ga0.85N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH3

NASA Astrophysics Data System (ADS)

Wang, Hongxia; Zhang, Xiaohan; Wang, Hailong; Lv, Zesheng; Li, Yongxian; Li, Bin; Yan, Huan; Qiu, Xinjia; Jiang, Hao

2018-05-01

InGaN visible-light metal-semiconductor-metal photodetectors with GaN interlayers deposited by pulsed NH3 were fabricated and characterized. By periodically inserting the GaN thin interlayers, the surface morphology of InGaN active layer is improved and the phase separation is suppressed. At 5 V bias, the dark current reduced from 7.0 × 10-11 A to 7.0 × 10-13 A by inserting the interlayers. A peak responsivity of 85.0 mA/W was measured at 420 nm and 5 V bias, corresponding to an external quantum efficiency of 25.1%. The insertion of GaN interlayers also lead to a sharper spectral response cutoff.

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

NASA Astrophysics Data System (ADS)

Mori, Takuma; Egawa, Takashi; Miyoshi, Makoto

2017-08-01

We conducted the study on the growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well (MQW) structures by metalorganic chemical vapor deposition (MOCVD). It was found that the sum of InGaN well thickness t well_total was a predominant factor to form the rough surface, in addition to the growth temperature as low as 800 °C for the p-GaN layers. Microstructure analyses revealed that the rough surfaces consisted of a certain number of hexagonal V-shaped pits starting from dislocations propagated through an under layer and they increased with the increased t well_total. It was confirmed that the light absorption was enlarged for MQW structure samples with rough-surface p-GaN layers on the top, owing to not only the thickness effect in MQWs but also their reduced light reflection on the surfaces. It was also confirmed that these optical properties contributed to the performance improvement in InGaN/GaN MQW solar cells.

Sn-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering

NASA Astrophysics Data System (ADS)

Lee, Su Yong; Kang, Hyon Chol

2018-01-01

We report the synthesis and characterization of Sn-doped β-Ga2O3 nanowires (NWs) deposited using radio frequency powder sputtering. The growth sequence of Sn-doped β-Ga2O3 NWs is similar to that of the undoped β-Ga2O3 NWs. Self-assembled Ga clusters act as seeds for initiating the growth of Sn-doped β-Ga2O3 NWs through a vapor-liquid-solid process, while Sn atoms are incorporated into the trunk of NWs uniformly. Different from the straight shape of undoped NWs, the conical shape of NWs is observed, which is attributed to the change in supersaturation conditions and the diffusion of the catalyst tip and reaction species.

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Colon, Albert; Stan, Liliana; Divan, Ralu

Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approachmore » this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material

Assessment of Bracket Surface Morphology and Dimensional Change

PubMed Central

Radhakrishnan, Pillai Devu; Sapna Varma, N. K.; Ajith, V. V.

2017-01-01

Objective: The objective of this study was to compare the surface morphology and dimensional stability of the bracket slot at the onset of treatment and after 12 months of intraoral exposure. The study also compared the amount of calcium at the bracket base which indicates enamel loss among the three orthodontic brackets following debonding after 12 months of intraoral exposure. Materials and Methods: The sample consisted of 60 (0.022” MBT) canine brackets. They were divided into three groups: self-ligating, ceramic bracket with metal slot, and stainless steel (SS) brackets. The slot dimensions, micromorphologic characteristics of as-received and retrieved brackets were measured with a stereomicroscope and scanning electron microscope (SEM), respectively. The amount of calcium at the bracket base which indicates enamel damage was quantified using energy-dispersive X-ray spectrometry (EDX). Results: The results showed statistically significant alterations (P < 0.05) in the right vertical dimension, internal tie wing width (cervical), right and left depth of the slot (Kruskal–Wallis test). Multiple comparison using Mann–Whitney test showed that ceramic brackets underwent (P < 0.05) minimal alterations in the right vertical dimension, internal tie wing width (cervical), right and left depth of the slot (0.01 mm, −0.003 mm, 0.006 mm, −0.002 mm, respectively) when compared with the changes seen in SS and self-ligating brackets. SEM analysis revealed an increase in the surface roughness of ceramic with metal slot brackets and self-ligating bracket showed the least irregularity. The presence of calcium was noted on all evaluated brackets under EDX, but ceramic with metal slot brackets showed a significantly greater amount of enamel loss (P = 0.001). Conclusion: Ceramic brackets were found to be dimensionally stable when compared to SS and self-ligating. Self-ligating bracket showed minimal surface irregularity. Ceramic with metal slot brackets showed a greater

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

PubMed

Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš

2014-08-01

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

1989-01-01

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

NASA Astrophysics Data System (ADS)

Zhao, Lu; Zhang, Shuo; Zhang, Yun; Yan, Jianchang; Zhang, Lian; Ai, Yujie; Guo, Yanan; Ni, Ruxue; Wang, Junxi; Li, Jinmin

2018-01-01

We demonstrate AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sputter-deposited AlN templates upon sapphire substrates. An AlN/AlGaN superlattices structure is inserted as a dislocation filter between the LED structure and the AlN template. The full width at half maximum values for (0002) and (10 1 bar 2) X-ray rocking curves of the n-type Al0.56Ga0.44N layer are 513 and 1205 arcsec, respectively, with the surface roughness of 0.52 nm. The electron concentration and mobility measured by Hall measurement are 9.3 × 1017cm-3 and 54 cm2/V·s at room temperature, respectively. The light output power of a 282-nm LED reaches 0.28 mW at 20 mA with an external quantum efficiency of 0.32%. And the values of leakage current and forward voltage of the LEDs are ∼3 nA at -10 V and 6.9 V at 20 mA, respectively, showing good electrical performance. It is expected that the cost of the UV-LED can be reduced by using sputter-deposited AlN template.

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

Microbial profile on metallic and ceramic bracket materials.

PubMed

Anhoury, Patrick; Nathanson, Dan; Hughes, Christopher V; Socransky, Sigmund; Feres, Magda; Chou, Laisheng Lee

2002-08-01

The placement of orthodontic appliances creates a favorable environment for the accumulation of a microbiota and food residues, which, in time, may cause caries or exacerbate any pre-existing periodontal disease. The purpose of the present study was to compare the total bacterial counts present on metallic and ceramic orthodontic brackets in order to clarify which bracket type has a higher plaque retaining capacity and to determine the levels of Streptococcus mutans and Lactobacillus spp on both types of brackets. Thirty-two metallic brackets and 24 ceramic brackets were collected from orthodontic patients at the day of debonding. Two brackets were collected from each patient; one from a maxillary central incisor and another from a maxillary second premolar. Sixteen patients who used metallic brackets and 12 patients who used ceramic brackets were sampled. Bacterial populations were studied using "checkerboard" DNA-DNA hybridization, which uses DNA probes to identify species in complex microbial samples. The significance of differences between groups was determined using the Mann-Whitney U-test. Results showed no significant differences between metallic and ceramic brackets with respect to the caries-inducing S mutans and L acidophilus spp counts. Mean counts of 8 of 35 additional species differed significantly between metallic and ceramic brackets with no obvious pattern favoring one bracket type over the other. This study showed higher mean counts of Treponema denticola, Actinobacillus actinomycetemcomitans, Fusobacterium nucleatum ss vincentii, Streptococcus anginosus, and Eubacterium nodatum on metallic brackets while higher counts of Eikenella corrodens, Campylobacter showae, and Selenomonas noxia were found on ceramic brackets.

HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

2007-09-28

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

Plasma deposited diamondlike carbon on GaAs and InP

NASA Technical Reports Server (NTRS)

Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

1984-01-01

The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

The fracture strength of ceramic brackets: a comparative study.

PubMed

Flores, D A; Caruso, J M; Scott, G E; Jeiroudi, M T

1990-01-01

Recent demand for esthetic brackets has led to the development and use of ceramic brackets in orthodontics. The purpose of this study was to compare the fracture strength of different ceramic brackets under different surface conditions and ligation methods using a torsional wire bending force. Five different bracket types (two polycrystalline, two single-crystal, and one metal) were tested using elastic and wire ligation, with half being scratched and the other half remaining unscratched. Results showed a significant difference between bracket types and surface conditions. Non-scratched single-crystal brackets had higher fracture strengths and slightly higher fracture loads than polycrystalline brackets. However, single-crystal brackets were significantly adversely affected by surface damage (scratching), while polycrystalline brackets were not significantly affected by surface damage. The fracture behavior of ceramic brackets followed the Griffith model where fracture strength decreased following surface damage.

Laser-Aided Ceramic Bracket Debonding: A Comprehensive Review

PubMed Central

Ghazanfari, Rezvaneh; Nokhbatolfoghahaei, Hanieh; Alikhasi, Marzieh

2016-01-01

Different techniques have been introduced for the removal of ceramic brackets. Since the early 1990s, lasers have been used experimentally for debonding ceramic brackets. The goal of this study is to give a comprehensive literature review on laser-aided ceramic bracket debonding. PubMed and Google Scholar databases were used to identify dental articles with the following combination of key words: Ceramic brackets, Debonding, and Laser. Sixteen English articles from 2004 to 2015 were selected. The selected studies were categorized according to the variables investigated including the intrapulpal temperature, shear bond strength, debonding time, enamel damage and bracket failure. Most articles reported decreased shear bond strength and debonding time following laser irradiation without any critical and irritating increase in pulpal temperature. There were no reports of bracket failure or enamel damage. Laser irradiation is an efficient way to reduce shear bond strength of ceramic bracket and debonding time. This technique is a safe way for removing ceramic bracket with minimal impact on intrapulpal temperature and enamel surface and it reduces ceramic bracket failure. PMID:27330690

Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition

NASA Astrophysics Data System (ADS)

Garbe, V.; Weise, J.; Motylenko, M.; Münchgesang, W.; Schmid, A.; Rafaja, D.; Abendroth, B.; Meyer, D. C.

2017-02-01

The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition annealing at 850 °C are used for contact formation. After annealing, contact shows ohmic behavior to n-GaN and a specific contact resistivity of 1.60 × 10-3 Ω cm2. To understand the contact formation on the microscopic scale, the contact was characterized by current-voltage measurements, linear transmission line method, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show the formation of Ti-N bonds at the GaN/Ti interface in the as-deposited stack. Annealing leads to diffusion of Ti, Al, Ga, and N, and the remaining metallic Ti is fully consumed by the formation of the intermetallic tetragonal Al3Ti phase. Native oxide from the GaN surface is trapped during annealing and accumulated in the Al interlayer. The TiN capping layer, however, was chemically stable during annealing. It prevented oxidation of the Ti/Al contact bilayer successfully and thus proved to be a well suitable diffusion barrier with ideal compatibility to the Ti/Al contact metallization.

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

DTIC Science & Technology

1987-08-15

SUPPLEMENTARY NOTATION 17. COSATI CODES 18 SUBJECT TERMS (Corinue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Epitaxy GaAs 9...Zr leiK m I141’ FIGURES 1 . Effect of Growth Parameters on Residual Doping Type ................... 7 2. Photoluminescence Spectrum of a GaAs Epilayer... 1 3 Successful homoepitaxial growth of high purity, unintentionally doped GaAs epilayers by organometallic chemical vapor deposition (OMCVD) has

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

1986-01-01

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Quantitative analysis of enamel on debonded orthodontic brackets.

PubMed

Cochrane, Nathan J; Lo, Thomas W G; Adams, Geoffrey G; Schneider, Paul M

2017-09-01

Iatrogenic damage to the tooth surface in the form of enamel tearouts can occur during removal of fixed orthodontic appliances. The aim of this study was to assess debonded metal and ceramic brackets attached with a variety of bonding materials to determine how frequently this type of damage occurs. Eighty-one patients close to finishing fixed orthodontic treatment were recruited. They had metal brackets bonded with composite resin and a 2-step etch-and-bond technique or ceramic brackets bonded with composite resin and a 2-step etch-and- bond technique, and composite resin with a self-etching primer or resin-modified glass ionomer cement. Debonded brackets were examined by backscattered scanning electron microscopy with energy dispersive x-ray spectroscopy to determine the presence and area of enamel on the base pad. Of the 486 brackets collected, 26.1% exhibited enamel on the bonding material on the bracket base pad. The incidences of enamel tearouts for each group were metal brackets, 13.3%; ceramic brackets, 30.2%; composite resin with self-etching primer, 38.2%; and resin-modified glass ionomer cement, 21.2%. The percentage of the bracket base pad covered in enamel was highly variable, ranging from 0% to 46.1%. Enamel damage regularly occurred during the debonding process with the degree of damage being highly variable. Damage occurred more frequently when ceramic brackets were used (31.9%) compared with metal brackets (13.3%). Removal of ceramic brackets bonded with resin-modified glass ionomer cement resulted in less damage compared with the resin bonding systems. Copyright © 2017 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

NASA Astrophysics Data System (ADS)

Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

2018-02-01

Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

Impact of bracket displacement or rotation during bonding and time of removal of excess adhesive on the bracket-enamel bond strength.

PubMed

Oliveira, Adauê S; Barwaldt, Caroline K; Bublitz, Luana S; Moraes, Rafael R

2014-06-01

This study investigated the the influence of bracket displacement or rotation during fixation and the time of excess adhesive removal from around the bracket on bond strength to enamel. Stainless steel brackets were bonded to the buccal faces of bovine incisors using Transbond XT® adhesive resin. The teeth were divided into five groups (n = 20). In the control group, no displacement or rotation of the bracket was carried out. In the Displac-A group, excess adhesive was removed after the bracket was displaced 2 mm incisally. In the B-Displac group, excess adhesive was removed before the bracket was displaced incisally. In the Rotat-A group, excess adhesive was removed after the bracket was rotated 45°. In the B-Rotat group, excess adhesive was removed before the bracket was rotated. Photoactivation was carried out on the lateral sides of the bracket. A shear test was conducted 10 min after fixation using a knife-edged chisel. Bond strength data were analysed using ANOVA and Fisher's test (5%). The adhesive remnant index (ARI) was scored under magnification. ARI data were analysed using the Kruskal-Wallis test (5%). No significant differences were detected among the Control, Displac-A, Rotat-A and B-Rotat groups. The B-Displac group showed lower bond strength than all of the other groups, except Displac-A. No significant differences were observed in ARI scores across groups. Displacements of the brackets during fixation did not seem to affect the enamel bond strength when excess adhesive is removed after the final positioning of the bracket. © 2014 British Orthodontic Society.

Deformation of metal brackets: a comparative study.

PubMed

Flores, D A; Choi, L K; Caruso, J M; Tomlinson, J L; Scott, G E; Jeiroudi, M T

1994-01-01

The purpose of this study was to determine the effect of material and design on the force and stress required to permanently deform metal brackets. Fourteen types of metal brackets were categorized according to raw material composition, slot torque degree, and wing type. Five types of raw materials, three types of slot torque degree, and four types of wing design were tested using an archwire torque test developed by Flores. An analysis of variance (ANOVA) and t-test showed that all three categories had a significant effect on the force and stress needed to permanently deform metal brackets. Of the three, raw material had the greatest effect on the amount of force. Results showed that 17-4PH and 303S had higher yield strengths and regular twin brackets had higher resistance to deformation. Also, as slot torque degree increased, brackets deformed with less force. Result confirmed that brackets requiring the greatest stress to permanently deform were made of steel with the greatest hardness.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

NASA Astrophysics Data System (ADS)

Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

An in vitro investigation on friction generated by ceramic brackets.

PubMed

Tecco, Simona; Teté, Stefano; Festa, Mario; Festa, Felice

2010-01-01

To compare friction (F) of conventional and ceramic brackets (0.022-inch slot) using a model that tests the sliding of the archwire through 10 aligned brackets. Polycrystalline alumina brackets (PCAs), PCA brackets with a stainless steel slot (PCA-M), and monocrystalline sapphire brackets (MCS) were tested under elastic ligatures using various archwires in dry and wet (saliva) states. Conventional stainless steel brackets were used as controls. In both dry and wet states, PCA and MCS brackets expressed a statistically significant higher F value with respect to stainless steel and PCA-M brackets when combined with the rectangular archwires (P<.01). PCA brackets showed significantly higher friction than MCS brackets (P<.01) when coupled with 0.014 x 0.025-inch nickel-titanium (Ni-Ti) archwire. SEM analysis showed differences in the surfaces among stainless steel, MCS, PCA-M, and PCA brackets. In the wet state, the mean F values were generally higher than in the dry state. PCA brackets showed significantly higher F than MCS brackets only when combined with 0.014 x 0.025-inch Ni-Ti archwires. Thus, in this study, a 10 aligned-brackets study model showed similar results when compared to a single bracket system except for friction level with 0.014 × 0.025-inch Ni-Ti archwires. © 2011 BY QUINTESSENCE PUBLISHING CO, INC.

Comparison of galvanic corrosion potential of metal injection molded brackets to that of conventional metal brackets with nickel-titanium and copper nickel-titanium archwire combinations.

PubMed

Varma, D Praveen Kumar; Chidambaram, S; Reddy, K Baburam; Vijay, M; Ravindranath, D; Prasad, M Rajendra

2013-05-01

The aim of the study is to investigate the galvanic corrosion potential of metal injection molding (MIM) brackets to that of conventional brackets under similar in vitro conditions with nickel-titanium and copper nickel-titanium archwires. Twenty-five maxillary premolar MIM stainless steel brackets and 25 conventional stainless steel brackets and archwires, 0.16 inch, each 10 mm length, 25 nickeltitanium wires, 25 copper nickel-titanium wires were used. They were divided into four groups which had five samples each. Combination of MIM bracket with copper nickel-titanium wire, MIM bracket with nickel-titanium wire and conventional stainless steel brackets with copper nickel-titanium wire and conventional stainless steel brackets with nickel-titanium wires which later were suspended in 350 ml of 1 M lactic acid solution media. Galvanic corrosion potential of four groups were analyzed under similar in vitro conditions. Precorrosion and postcorrosion elemental composition of MIM and conventional stainless steel bracket by scanning electron microscope (SEM) with energy dispersive spectroscope (EDS) was done. MIM bracket showed decreased corrosion susceptibility than conventional bracket with copper nickeltitanium wire. Both MIM and conventional bracket showed similar corrosion resistance potential in association with nickel-titanium archwires. It seems that both brackets are more compatible with copper nickel-titanium archwires regarding the decrease in the consequences of galvanic reaction. The EDS analysis showed that the MIM brackets with copper nickel-titanium wires released less metal ions than conventional bracket with copper nickeltitanium wires. MIM brackets showed decreased corrosion susceptibility, copper nickel-titanium archwires are compatible with both the brackets than nickel-titanium archwires. Clinically MIM and conventional brackets behaved more or less similarly in terms of corrosion resistance. In order to decrease the corrosion potential of MIM

Characterisation of Ga-coated and Ga-brazed aluminium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferchaud, E.; Christien, F., E-mail: frederic.christien@univ-nantes.fr; Barnier, V.

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples showsmore » that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.« less

21 CFR 872.5470 - Orthodontic plastic bracket.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Orthodontic plastic bracket. 872.5470 Section 872...) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5470 Orthodontic plastic bracket. (a) Identification. An orthodontic plastic bracket is a plastic device intended to be bonded to a tooth to apply...

21 CFR 872.5470 - Orthodontic plastic bracket.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Orthodontic plastic bracket. 872.5470 Section 872...) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5470 Orthodontic plastic bracket. (a) Identification. An orthodontic plastic bracket is a plastic device intended to be bonded to a tooth to apply...

21 CFR 872.5470 - Orthodontic plastic bracket.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Orthodontic plastic bracket. 872.5470 Section 872...) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5470 Orthodontic plastic bracket. (a) Identification. An orthodontic plastic bracket is a plastic device intended to be bonded to a tooth to apply...

21 CFR 872.5470 - Orthodontic plastic bracket.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Orthodontic plastic bracket. 872.5470 Section 872...) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5470 Orthodontic plastic bracket. (a) Identification. An orthodontic plastic bracket is a plastic device intended to be bonded to a tooth to apply...

21 CFR 872.5470 - Orthodontic plastic bracket.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Orthodontic plastic bracket. 872.5470 Section 872...) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5470 Orthodontic plastic bracket. (a) Identification. An orthodontic plastic bracket is a plastic device intended to be bonded to a tooth to apply...

Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, K. E.; Murarka, S. P.; Lu, T.-M.; Lee, S. L.

1997-06-01

Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ˜1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.

[Self-ligating edgewise brackets. An overview].

PubMed

Katsaros, C; Dijkman, J F

2003-01-01

During the last years both the manufactures and the orthodontists seem to show an increased interest in self-ligating brackets. This paper aims to present the history of self-ligating systems, to describe the three mostly used bracketsystems and to review the relevant literature. It seems from the existing data that self-ligating brackets have certain advantages over conventionally ligated brackets. However, the data are still thin and a high need for well designed clinical trials exist.

Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Han, Xiaowei; Wang, Li; Li, Shufeng; Gao, Dongwen; Pan, Yong

2018-01-01

ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga2O3 powders were weighted at a molar ratio of 18:1. Se was oxidized to Se2O3 and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.

Magnetization reversal in epitaxial exchange-biased IrMn/FeGa bilayers with anisotropy geometries controlled by oblique deposition

NASA Astrophysics Data System (ADS)

Zhang, Yao; Zhan, Qingfeng; Zuo, Zhenghu; Yang, Huali; Zhang, Xiaoshan; Dai, Guohong; Liu, Yiwei; Yu, Ying; Wang, Jun; Wang, Baomin; Li, Run-Wei

2015-05-01

We fabricated epitaxial exchange biased (EB) IrMn/FeGa bilayers by oblique deposition and systematically investigated their magnetization reversal. Two different configurations with the uniaxial magnetic anisotropy Ku parallel and perpendicular to the unidirectional anisotropy Ke b were obtained by controlling the orientation of the incident FeGa beam during deposition. A large ratio of Ku/Ke b was obtained by obliquely depositing the FeGa layer to achieve a large Ku while reducing the IrMn thickness to obtain a small Ke b. Besides the previously reported square loops, conventional asymmetrically shaped loops, and one-sided and two-sided two-step loops, unusual asymmetrically shaped loops with a three-step magnetic transition for the descending branch and a two-step transition for the ascending branch and biased three-step loops were observed at various field orientations in the films of both IrMn (tIrMn=1.5 to 20 nm)/FeGa (10 nm) with Ku⊥ Ke b and IrMn (tIrMn≤2 nm)/FeGa (10 nm) with Ku|| Ke b . Considering the geometries of anisotropies, a model based on domain wall nucleation and propagation was employed to quantitatively describe the angular dependent behaviors of IrMn/FeGa bilayers. The biased three-step magnetic switching was predicted to take place when | Ku|> ɛ90°+Ke b , where ɛ90° is the 90° domain wall nucleation energy, and the EB leads to the appearance of the unusual asymmetrically shaped hysteresis loops.

Laser debonding of ceramic orthodontic brackets: a theoretical approach

NASA Astrophysics Data System (ADS)

Kearney, Kristine L.; Marangoni, Roy D.; Rickabaugh, Jeff L.

1992-06-01

Ceramic brackets are an esthetic substitute for conventional stainless steel brackets in orthodontic patients. However, ceramic brackets are more brittle and have higher bond strengths which can lead to bracket breakage and enamel damage during debonding. It has been demonstrated that various lasers can facilitate ceramic bracket removal. One mechanism with the laser is through the softening of the bracket adhesive. The high energy density from the laser on the bracket and adhesive can have a resultant deleterious thermal effect on the pulp of the tooth which may lead to pulpal death. A theoretical computer model of bracket, adhesive, enamel and dentin has been generated for predicting heat flow through this system. Heat fluxes at varying intensities and modes have been input into the program and the resultant temperatures at various points or nodes were determined. Further pursuit should lead to optimum parameters for laser debonding which would have minimal effects on the pulp.

Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

NASA Astrophysics Data System (ADS)

Vinodh Kumar, S.; Seenithurai, S.; Manivel Raja, M.; Mahendran, M.

2015-10-01

Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L21 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

Bracketing as a skill in conducting unstructured qualitative interviews.

PubMed

Sorsa, Minna Anneli; Kiikkala, Irma; Åstedt-Kurki, Päivi

2015-03-01

To provide an overview of bracketing as a skill in unstructured qualitative research interviews. Researchers affect the qualitative research process. Bracketing in descriptive phenomenology entails researchers setting aside their pre-understanding and acting non-judgementally. In interpretative phenomenology, previous knowledge is used intentionally to create new understanding. A literature search of bracketing in phenomenology and qualitative research. This is a methodology paper examining the researchers' impact in creating data in creating data in qualitative research. Self-knowledge, sensitivity and reflexivity of the researcher enable bracketing. Skilled and experienced researchers are needed to use bracketing in unstructured qualitative research interviews. Bracketing adds scientific rigour and validity to any qualitative study.

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

1988-01-01

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Microbial complexes levels in conventional and self-ligating brackets.

PubMed

Bergamo, Ana Zilda Nazar; Nelson-Filho, Paulo; Andrucioli, Marcela Cristina Damião; do Nascimento, Cássio; Pedrazzi, Vinícius; Matsumoto, Mírian Aiko Nakane

2017-05-01

The aims were to evaluate the levels of bacterial species in saliva and in situ and to assess whether the design of brackets influences the risk of developing periodontal disease. Twenty patients (13.3 mean age) were bonded with self-ligating brackets and a conventional bracket. Saliva was collected before bonding and 30 and 60 days after bonding. One sample of each bracket was removed 30 and 60 days after bonding. The analysis was determined by checkerboard DNA-DNA hybridization. The data was evaluated by the non-parametric test. A significant increase in the levels of bacterial species in the saliva occurred in 15 of the 22 analyzed species. The self-ligating brackets presented the highest incidence percentages for the orange and red complexes 60 days after bonding. In situ analyses showed different patterns according to the bracket design. The levels of Campylobacter rectus showed significant differences (p = 0.011) 60 days after bonding among the three brackets; the highest values were observed in the In-Ovation®R bracket. The bracket design seems to influence the levels of bacterial species involved in periodontal disease. Considering the wide variety of bacterial species, additional studies are needed to aid in the establishment of effective protocols to prevent the development of periodontal disease during orthodontic treatment. A dynamic alteration in the oral microbiota may lead to inflammatory reactions in the supporting soft and hard tissues. The different types of brackets interfere with bacterial adherence. Bracket design should be considered in orthodontic treatment.

Metallographic structure and hardness of titanium orthodontic brackets.

PubMed

Zinelis, Spiros; Annousaki, Olga; Eliades, Theodore; Makou, Margarita

2003-11-01

To determine the elemental composition, microstructure, and hardness of two different brands of titanium (Ti) orthodontic brackets. Four specimens of each brand were embedded in epoxy resin and, after metallographic grinding and polishing, were studied under a metallographic microscope. The bonding base morphology of each bracket was studied in as-received brackets by scanning electron microscopy. Energy dispersive x-ray microanalysis (EDS) was used on polished specimens to assess the elemental composition of base and wing bracket components, and the brackets were subjected to metallographic etching to reveal the metallurgical structure. The same specimen surfaces were used for assessment of the Vickers hardness. The results were statistically analyzed by two-way analysis of variance (ANOVA) with the bracket brand and bracket region (base, wing) serving as discriminating variables, whilst further group differences were investigated with Tukey's multiple comparison test at the alpha = 0.05 level of significance. Metallographic imaging revealed that the Orthos2 brackets (Ormco, Glendora, CA, USA) consist of two parts joined together by laser welding, with large gaps along the base wing interface, whereas Rematitan brackets (Dentaurum, Ispringen, Germany) are single-piece appliances. Ti was the only element identified in Rematitan and Orthos2 base materials, while aluminium (Al) and vanadium (V) were also found in the Orthos2 wing component. Metallographic analysis showed the presence of a + b phase for Orthos2 and plate-like grains for Rematitan. The results of the Vickers hardness testing were: Orthos2 (wing): 371 +/- 22, Rematitan (wing): 272 +/- 4, Rematitan (base): 271 +/- 16, Orthos2 (base): 165 +/- 2. The findings of the present study suggest that there are significant differences in composition, microstructure and hardness between the two commercial types of Ti brackets tested; the clinical implications of the findings are discussed.

Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Ford, C. W.; Werthen, J. G.

1984-01-01

Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition.

PubMed

Ra, Yong-Ho; Navamathavan, Rangaswamy; Yoo, Hee-Il; Lee, Cheul-Ro

2014-03-12

We report the controlled synthesis of InGaN/GaN multiple quantum well (MQW) uniaxial (c-plane) and coaxial (m-plane) nanowire (NW) heterostructures by metalorganic chemical vapor deposition. Two kinds of heterostructure NW light-emitting diodes (LEDs) have been fabricated: (1) 10 pairs of InGaN/GaN MQW layers in the c-plane on the top of n-GaN NWs where Mg-doped p-GaN NW is axially grown (2) p-GaN/10 pairs of InGaN/GaN shell structure were surrounded by n-GaN core. Here, we discuss a comparative analysis based on the m-plane and the c-plane oriented InGaN/GaN MQW NW arrays. High-resolution transmission electron microscopy studies revealed that the barrier and the well structures of MQW were observed to be substantially clear with regular intervals while the interface regions were extremely sharp. The c-plane and m-plane oriented MQW single NW was utilized for the parallel assembly fabrication of the LEDs via a focused ion beam. The polarization induced effects on the c-plane and m-plane oriented MQW NWs were precisely compared via power dependence electroluminescence. The electrical properties of m-plane NWs exhibited superior characteristics than that of c-plane NWs owing to the absence of piezoelectric polarization fields. According to this study, high-quality m-plane coaxial NWs can be utilized for the realization of high-brightness LEDs.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

2014-07-01

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

NASA Astrophysics Data System (ADS)

Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

2014-07-01

Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodriguez-Alvarez, H., E-mail: humberto.rodriguez@helmholtz-berlin.de; Helmholtz-Zentrum Berlin, Hahn-Meitner Platz 1, 14109 Berlin; Mainz, R.

2014-05-28

We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se{sub 2} thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se{sub 2} surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of amore » double Ga gradient within the Cu(In,Ga)Se{sub 2} layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.« less

α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

NASA Astrophysics Data System (ADS)

Roberts, J. W.; Jarman, J. C.; Johnstone, D. N.; Midgley, P. A.; Chalker, P. R.; Oliver, R. A.; Massabuau, F. C.-P.

2018-04-01

α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga2O3 by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 Å/cycle, and predominantly consists of α-Ga2O3 in the form of (0001) -oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising ε-Ga2O3. The remainder of the Ga2O3 film - i.e. nearer the surface and between the α-Ga2O3 columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga2O3 films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga2O3 present in multiphase samples.

In vitro evaluation of frictional forces of two ceramic orthodontic brackets versus a stainless steel bracket in combination with two types of archwires.

PubMed

Arash, Valiollah; Rabiee, Mahmoud; Rakhshan, Vahid; Khorasani, Sara; Sobouti, Farhad

2015-01-01

The aim of this study was to compare frictional forces between monocrystalline alumina (MA), polycrystalline alumina (PA), and stainless steel (SS) brackets with two SS wires: Rectangular and round. In this in vitro study, 60 0.022 brackets [20 PA (0° torque, Forestadent, Germany) and 20 MA (0° torque, Ormco, California, USA)] brackets plus 20 SS brackets (0° torque, Foretadent, Germany) and 60 SS archwires (30 rectangular 0.019 ×0.025 archwires and 30 round 0.018 archwires, Ortho Technology, USA) were used in subgroups of 10 from the combination of all brackets and all archwires. A universal testing machine (Instron, Model STM 250, Germany) was used to investigate the static frictional resistance. The angulation between the bracket and wire was 0°, and the wires were pulled through the slots at a crosshead speed of 10 mm/min. Two-way and one-way analyses of variance (ANOVA) and Tukey tests were used to analyze the data. Mean (SD) static frictional force for each group was as follows: MA + round: 3.47 (0.38); MA + rectangular: 4.05 (0.47); PA + round: 4.14 (0.37); PA + rectangular: 4.45 (0.65); SS + round: 3.28 (0.22); and SS + rectangular: 4.22 (0.61). Significant effects of bracket types (P = 0.001) and archwire types (P = 0.000) on the friction force were detected using ANOVA. Tukey test indicated significant differences between PA brackets with both SS and MA brackets (P < 0.05), but not between SS and MA brackets. The two archwires as well had significantly different effects (Tukey P = 0.000). Based on the present in-vitro study, the PA brackets might create higher frictional forces compared to both SS and MA brackets. The rectangular 0.019 ×0.025 archwire might create greater forces than round 0.018 archwire.

Colour stability of aesthetic brackets: ceramic and plastic.

PubMed

Filho, Hibernon Lopes; Maia, Lúcio Henrique; Araújo, Marcus V; Eliast, Carlos Nelson; Ruellas, Antônio Carlos O

2013-05-01

The colour stability of aesthetic brackets may differ according to their composition, morphology and surface property, which may consequently influence their aesthetic performance. To assess the colour stability of aesthetic brackets (ceramic and plastic) after simulating aging and staining. Twelve commercially manufactured ceramic brackets and four different plastic brackets were assessed. To determine possible colour change (change of E*(ab)) and the value of the NBS (National Bureau of Standards) unit system, spectrophotometric colour measurements for CIE L*, a* and b* were taken before and after the brackets were aged and stained. Statistical analysis was undertaken using a one-way ANOVA analysis of variance and a Tukey multiple comparison test (alpha = 0.05). The colour change between the various (ceramic and plastic) materials was not significant (p > 0.05), but still varied significantly (p < 0.001) between the brackets of the same composition or crystalline structure and among commercial brands. Colour stability cannot be confirmed simply by knowing the type of material and crystalline composition or structure.

The effect of pre-cure bracket movement on shear bond strength during placement of orthodontic brackets, an in vitro study.

PubMed

Tam, Byron; Bollu, Prashanti; Chaudhry, Kishore; Subramani, Karthikeyan

2017-10-01

The purpose of this study was to determine the influence of linear and rotational pre-cure bracket displacement during the bonding procedure on shear bond strength (SBS) of orthodontic brackets. Stainless steel orthodontic premolar brackets were bonded to the buccal surfaces of 50 human pre-molars with a conventional two-step bonding protocol. Extracted human pre-molars were divided into 5 groups (n=10/group). In the Control Group, the brackets were bonded with no pre-cure bracket displacement or rotation. The Rotation Group was bonded with 45 degrees of pre-cure rotation. The Displacement Group was bonded with 2mm pre-cure linear displacement. The Rotation-Displacement Group was bonded with pre-cure movements of 45º counter-clockwise rotation and 2mm displacement. The Slippage Group was bonded with 2mm each of mesial and distal pre-cure linear displacement. Photo-activation was carried out on the lateral sides of the bracket. Shear debonding force was measured, 24 hours after initial bonding, with an Instron universal testing machine using a knife-edged chisel. Data was analyzed using one-way ANOVA test. Adhesive Remnant Index (ARI) was scored under 15x magnification. The ARI data was analyzed using the Chi-square test ( p -value < 0.05). No statistically significant differences were detected among the control and experimental groups ( p = 0.331). The rotation and displacement group showed the highest mean SBS than all other groups. Mean SBS for all groups were above the clinically acceptable range. No statistically significant differences were detected in ARI scores among groups ( p = 0.071). Linear and rotational pre-cure bracket displacements do not appear to effect the shear bond strength of orthodontic brackets. Key words: Shear bond strength, orthodontic bracket, displacement, rotation, adhesive remnant index, pre-cure movement.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

1993-01-01

Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

1992-01-01

Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Using a Bracketed Analysis as a Learning Tool.

ERIC Educational Resources Information Center

Main, Keith

1995-01-01

Bracketed analysis is an examination of experiences within a defined time frame or "bracket." It assumes the ability to learn from any source: behaviors, emotions, rational and irrational thought, insights, reflections, and reactions. A bracketed analysis to determine what went wrong with a grant proposal that missed deadlines…

Calculation of four-particle harmonic-oscillator transformation brackets

NASA Astrophysics Data System (ADS)

Germanas, D.; Kalinauskas, R. K.; Mickevičius, S.

2010-02-01

A procedure for precise calculation of the three- and four-particle harmonic-oscillator (HO) transformation brackets is presented. The analytical expressions of the four-particle HO transformation brackets are given. The computer code for the calculations of HO transformation brackets proves to be quick, efficient and produces results with small numerical uncertainties. Program summaryProgram title: HOTB Catalogue identifier: AEFQ_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEFQ_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 1247 No. of bytes in distributed program, including test data, etc.: 6659 Distribution format: tar.gz Programming language: FORTRAN 90 Computer: Any computer with FORTRAN 90 compiler Operating system: Windows, Linux, FreeBSD, True64 Unix RAM: 8 MB Classification: 17.17 Nature of problem: Calculation of the three-particle and four-particle harmonic-oscillator transformation brackets. Solution method: The method is based on compact expressions of the three-particle harmonics oscillator brackets, presented in [1] and expressions of the four-particle harmonics oscillator brackets, presented in this paper. Restrictions: The three- and four-particle harmonic-oscillator transformation brackets up to the e=28. Unusual features: Possibility of calculating the four-particle harmonic-oscillator transformation brackets. Running time: Less than one second for the single harmonic-oscillator transformation bracket. References:G.P. Kamuntavičius, R.K. Kalinauskas, B.R. Barret, S. Mickevičius, D. Germanas, Nuclear Physics A 695 (2001) 191.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

3D-printed orthodontic brackets - proof of concept.

PubMed

Krey, Karl-Friedrich; Darkazanly, Nawras; Kühnert, Rolf; Ruge, Sebastian

Today, orthodontic treatment with fixed appliances is usually carried out using preprogrammed straight-wire brackets made of metal or ceramics. The goal of this study was to determine the possibility of clinically implementing a fully digital workflow with individually designed and three-dimensionally printed (3D-printed) brackets. Edgewise brackets were designed using computer-aided design (CAD) software for demonstration purposes. After segmentation of the malocclusion model generated based on intraoral scan data, the brackets were digitally positioned on the teeth and a target occlusion model created. The thus-defined tooth position was used to generate a template for an individualized arch form in the horizontal plane. The base contours of the brackets were modified to match the shape of the tooth surfaces, and a positioning guide (fabricated beforehand) was used to ensure that the brackets were bonded at the correct angle and position. The brackets, positioning guide, and retainer splint, digitally designed on the target occlusion model, were 3D printed using a Digital Light Processing (DLP) 3D printer. The archwires were individually pre-bent using the template. In the treatment sequence, it was shown for the first time that, in principle, it is possible to perform treatment with an individualized 3D-printed brackets system by using the proposed fully digital workflow. Technical aspects of the system, problems encountered in treatment, and possible future developments are discussed in this article.

RSRM nozzle actuator bracket/lug fracture mechanics qualification test

NASA Technical Reports Server (NTRS)

Kelley, Peggy

1993-01-01

This is the final report for the actuator bracket/lug fracture mechanics qualification test. The test plan (CTP-0071) outlined a two-phase test program designed to answer questions about the fracture criticality of the redesigned solid rocket motor (RSRM) nozzle actuator bracket. An analysis conducted using the NASA/FLAGRO fracture mechanics computer program indicated that the actuator bracket might be a fracture critical component. In the NASA/FLAGRO analysis, a simple lug model was used to represent the actuator bracket. It was calculated that the bracket would fracture if subjected to an actuator stall load in the presence of a 0.10 in. corner crack at the actuator attachment hole. The 0.10 in. crack size corresponds to the nondestructive inspection detectability limit for the actuator bracket. The inspection method used is the dye penetrant method. The actuator stall load (103,424 lb) is the maximum load which the actuator bracket is required to withstand during motor operation. This testing was designed to establish the accuracy of the analytical model and to directly determine whether the actuator bracket is capable of meeting fracture mechanics safe-life requirements.

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

Comparative Analysis of Bracket Slot Dimensions Evaluating Different Manufacturing Techniques

DTIC Science & Technology

2015-04-24

Bracket 1 (Avex Suite, Opal ) .......................................... 39 Appendix B: Raw data—Bracket 2 (Victory Series, 3M...32 viii LIST OF FIGURES Figure 1: Bracket 1 (Avex Suite, Opal ) ................................................................ 10...15 Figure 7: Example of points selected using Bracket 1 (Avex Suite, Opal

Comparative Study on Graded-Barrier AlxGa1‑xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

NASA Astrophysics Data System (ADS)

Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Yi-Ping; Liu, Han-Yin; Yang, Wen-Luh; Yang, Shen-Tin

2018-06-01

Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1‑xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1‑xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu

2015-06-15

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps withmore » a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.« less

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kaess, Felix; Mita, Seiji; Xie, Jingqiao; Reddy, Pramod; Klump, Andrew; Hernandez-Balderrama, Luis H.; Washiyama, Shun; Franke, Alexander; Kirste, Ronny; Hoffmann, Axel; Collazo, Ramón; Sitar, Zlatko

2016-09-01

In the low doping range below 1 × 1017 cm-3, carbon was identified as the main defect attributing to the sudden reduction of the electron mobility, the electron mobility collapse, in n-type GaN grown by low pressure metalorganic chemical vapor deposition. Secondary ion mass spectroscopy has been performed in conjunction with C concentration and the thermodynamic Ga supersaturation model. By controlling the ammonia flow rate, the input partial pressure of Ga precursor, and the diluent gas within the Ga supersaturation model, the C concentration in Si-doped GaN was controllable from 6 × 1019 cm-3 to values as low as 2 × 1015 cm-3. It was found that the electron mobility collapsed as a function of free carrier concentration, once the Si concentration closely approached the C concentration. Lowering the C concentration to the order of 1015 cm-3 by optimizing Ga supersaturation achieved controllable free carrier concentrations down to 5 × 1015 cm-3 with a peak electron mobility of 820 cm2/V s without observing the mobility collapse. The highest electron mobility of 1170 cm2/V s was obtained even in metalorganic vapor deposition-grown GaN on sapphire substrates by optimizing growth parameters in terms of Ga supersaturation to reduce the C concentration.

In vitro evaluation of frictional forces of two ceramic orthodontic brackets versus a stainless steel bracket in combination with two types of archwires

PubMed Central

Arash, Valiollah; Rabiee, Mahmoud; Rakhshan, Vahid; Khorasani, Sara; Sobouti, Farhad

2015-01-01

Purpose: The aim of this study was to compare frictional forces between monocrystalline alumina (MA), polycrystalline alumina (PA), and stainless steel (SS) brackets with two SS wires: Rectangular and round. Materials and Methods: In this in vitro study, 60 0.022 brackets [20 PA (0° torque, Forestadent, Germany) and 20 MA (0° torque, Ormco, California, USA)] brackets plus 20 SS brackets (0° torque, Foretadent, Germany) and 60 SS archwires (30 rectangular 0.019 ×0.025 archwires and 30 round 0.018 archwires, Ortho Technology, USA) were used in subgroups of 10 from the combination of all brackets and all archwires. A universal testing machine (Instron, Model STM 250, Germany) was used to investigate the static frictional resistance. The angulation between the bracket and wire was 0°, and the wires were pulled through the slots at a crosshead speed of 10 mm/min. Two-way and one-way analyses of variance (ANOVA) and Tukey tests were used to analyze the data. Results: Mean (SD) static frictional force for each group was as follows: MA + round: 3.47 (0.38); MA + rectangular: 4.05 (0.47); PA + round: 4.14 (0.37); PA + rectangular: 4.45 (0.65); SS + round: 3.28 (0.22); and SS + rectangular: 4.22 (0.61). Significant effects of bracket types (P = 0.001) and archwire types (P = 0.000) on the friction force were detected using ANOVA. Tukey test indicated significant differences between PA brackets with both SS and MA brackets (P < 0.05), but not between SS and MA brackets. The two archwires as well had significantly different effects (Tukey P = 0.000). Conclusions: Based on the present in-vitro study, the PA brackets might create higher frictional forces compared to both SS and MA brackets. The rectangular 0.019 ×0.025 archwire might create greater forces than round 0.018 archwire. PMID:26020037

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

A comparative assessment of torque generated by lingual and conventional brackets.

PubMed

Sifakakis, Iosif; Pandis, Nikolaos; Makou, Margarita; Eliades, Theodore; Katsaros, Christos; Bourauel, Christoph

2013-06-01

The aim of this study was to assess the effect of bracket type on the labiopalatal moments generated by lingual and conventional brackets. Incognito™ lingual brackets (3M Unitek), STb™ lingual brackets (Light Lingual System; ORMCO), In-Ovation L lingual brackets (DENTSPLY GAC), and conventional 0.018 inch slot brackets (Gemini; 3M Unitek) were bonded on identical maxillary acrylic resin models with levelled and aligned teeth. Each model was mounted on the orthodontic measurement and simulation system and 10 0.0175 × 0.0175 TMA wires were used for each bracket type. The wire was ligated with elastomerics into the Incognito, STb, and conventional brackets and each measurement was repeated once after religation. A 15 degrees buccal root torque (+15 degrees) and then a 15 degrees palatal root torque (-15 degrees) were gradually applied to the right central incisor bracket. After each activation, the bracket returned to its initial position and the moments in the sagittal plane were recorded during these rotations of the bracket. One-way analysis of variance with post hoc multiple comparisons (Tukey test at 0.05 error rate) was conducted to assess the effect on bracket type on the generated moments. The magnitude of maximum moment at +15 degrees ranged 8.8, 8.2, 7.1, and 5.8 Nmm for the Incognito, STb, conventional Gemini, and the In-Ovation L brackets, respectively; similar values were recorded at -15 degrees: 8.6, 8.1, 7.0, and 5.7 Nmm, respectively. The recorded differences of maximum moments were statistically significant, except between the Incognito and STb brackets. Additionally, the torque angles were evaluated at which the crown torque fell well below the minimum levels of 5.0 Nmm, as well as the moment/torque ratio at the last part of the activation/deactivation curve, between 10 and 15 degrees. The lowest torque expression was observed at the self-ligating lingual brackets, followed by the conventional brackets. The Incognito and STb lingual brackets

Evaluation of the Friction of Self-Ligating and Conventional Bracket Systems

PubMed Central

Tecco, Simona; Di Iorio, Donato; Nucera, Riccardo; Di Bisceglie, Beatrice; Cordasco, Giancarlo; Festa, Felice

2011-01-01

Objectives: This in vitro study evaluated the friction (F) generated by aligned stainless steel (SS) conventional brackets, self-ligating Damon MX© brackets (SDS Ormco, Glendora, California, USA), Time3© brackets (American Orthodontics, Sheboygan, Wisconsin, USA), Vision LP© brackets (American Orthodontics), and low-friction Slide© ligatures (Leone, Firenze, Italy) coupled with various SS, nickel-titanium (NiTi), and beta-titanium (TMA) archwires. Methods: All brackets had a 0.022-inch slot, and the orthodontic archwires were 0.014-inch, 0.016-inch, 0.014×0.025-inch, 0.018×0.025-inch, and 0.019×0.025-inch NiTi; 0.017×0.025-inch TMA; and 0.019×0.025-inch SS. Each bracket-archwire combination was tested 10 times. In the test, 10 brackets of the same group were mounted in alignment on a metal bar. The archwires moved through all the 10 brackets at a crosshead speed of 0.5 mm/min (each run lasted approximately 5 min). The differences among 5 groups of brackets were analyzed through the Kruskal-Wallis test, and a Mann-Whitney test was calculated as post hoc analysis. The P value was set at 0.05. Results: Coupled with 0.014-inch NiTi and 0.016-inch NiTi, Victory Series© brackets generated the greatest F, while Damon MX© and Vision LP© brackets generated the lowest (P<.05); no significant differences were observed between Time3© brackets and Slide© ligatures. Coupled with all the rectangular archwires, Victory Series© brackets, Slide© ligatures, and Vision LP© self-ligating brackets generated significantly lower F than did Time3© and Damon MX© self-ligating brackets (P<.05). Conclusions: These findings suggest that self-ligating brackets are a family of brackets that, in vitro, can generate different levels of F when coupled with thin or thick, rectangular, or round archwires. Clinical conclusions based on our results are not possible due to the limitations of the experimental conditions. PMID:21769273

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

NASA Astrophysics Data System (ADS)

Chen, Changqing; Zhang, Jianping; Yang, Jinwei; Adivarahan, Vinod; Rai, Shiva; Wu, Shuai; Wang, Hongmei; Sun, Wenhong; Su, Ming; Gong, Zheng; Kuokstis, Edmundas; Gaevski, Mikhail; Khan, Muhammad Asif

2003-07-01

We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.

Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Wakabayashi, Ryo; Hattori, Mai; Yoshimatsu, Kohei; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

2018-06-01

High-quality β-(AlxGa1-x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1-x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Yen, Kuo-Yi; Chiu, Chien-Hua; Hsiao, Chi-Ying; Li, Chun-Wei; Chou, Chien-Hua; Lo, Ko-Ying; Chen, Tzu-Pei; Lin, Chu-Hsien; Lin, Tai-Yuan; Gong, Jyh-Rong

2014-02-01

Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple quantum well) MQW LEDs. Based on θ-to-2θ X-ray diffraction (XRD) analyses, the N2-annealed GZO was found to show almost the same lattice constant c as ZnO does, while the lattice constant c of a N2-annealed IZO was detected to be larger than that of the ZnO. It appears that the implementation of N2-annealed ALD-grown GZO (or IZO) in an InGaN/GaN MQW LED allows to enable light extraction and forward voltage reduction of the LED under certain conditions. At 20 mA operating condition, the 400 °C N2-annealed n-GZO-coated and the 600 °C N2-annealed n-IZO-coated InGaN/GaN MQW LEDs were found to exhibit optimized forward voltages of 3.1 and 3.2 V, respectively, with the specific contact resistances of the n-GZO/p-GaN and n-IZO/p-GaN contacts being 4.1×10-3 and 8.8×10-3 Ω-cm2. By comparing with an InGaN/GaN MQW LED structure having a commercial-grade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n-GZO-coated InGaN/GaN MQW LED shows an increment of light output power of 15% at 20 mA. It is believed that the enhanced light extraction of the n-GZO-coated InGaN/GaN MQW LED is due to a higher refractive index of n-GZO than that of ITO along with a comparable optical transmittance of n-GZO to that of ITO.

Design of an Orthodontic Torque Simulator for Measurement of Bracket Deformation

NASA Astrophysics Data System (ADS)

Melenka, G. W.; Nobes, D. S.; Major, P. W.; Carey, J. P.

2013-12-01

The design and testing of an orthodontic torque simulator that reproduces the effect of archwire rotation on orthodontic brackets is described. This unique device is capable of simultaneously measuring the deformation and loads applied to an orthodontic bracket due to archwire rotation. Archwire rotation is used by orthodontists to correct the inclination of teeth within the mouth. This orthodontic torque simulator will provide knowledge of the deformation and loads applied to orthodontic bracket that will aide clinicians by describing the effect of archwire rotation on brackets. This will also impact that design on new archwirebracket systems by providing an assessment of performance. Deformation of the orthodontic bracket tie wings is measured using a digital image correlation process to measure elastic and plastic deformation. The magnitude of force and moments applied to the bracket though the archwire is also measured using a six-axis load cell. Initial tests have been performed on two orthodontic brackets of varying geometry to demonstrate the measurement capability of the orthodontic torque simulator. The demonstration experiment shows that a Damon Q bracket had a final plastic deformation after a single loading of 0.022 mm while the Speed bracket deformed 0.071 mm. This indicates that the Speed bracket plastically deforms 3.2 times more than the Damon Q bracket for similar magnitude of applied moment. The demonstration experiment demonstrates that bracket geometry affect the deformation of orthodontic brackets and this difference can be detected using the orthodontic torque simulator.

Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizir, Seda; Haider, Ali; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr

2016-07-15

Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 °C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt{sub 3} and N{sub 2}/H{sub 2} plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm{sup 3} for GaN grown on Simore » (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2–3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9–10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.« less

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Growth mechanism and elemental distribution of beta-Ga2O3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition.

PubMed

Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A; Ren, Zhifeng

2012-04-01

Long beta-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown beta-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline beta-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into beta-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the beta-Ga2O3 nanowires at nanoscale.

Shear Bond Strength of Orthodontic Brackets Bonded to Zirconium Crowns

PubMed Central

Mehmeti, Blerim; Azizi, Bleron; Kelmendi, Jeta; Iljazi-Shahiqi, Donika; Alar, Željko

2017-01-01

Background An increasing demand for esthetic restorations has resulted in an increased use of all-ceramic restorations, such as zirconium. However, one of the challenges the orthodontist must be willing to face is how to increase bond strength between the brackets and various ceramic restorations.Bond strength can beaffected bybracket type, by the material that bracketsaremade of, and their base surface design or retention mode. ​ Aim: of this study was to perform a comparative analysis of the shear bond strength (SBS) of metallic and ceramic orthodontic brackets bonded to all-zirconium ceramic surfaces used for prosthetic restorations, and also to evaluate the fracture mode of these two types of orthodontic brackets. Material and methods Twenty samples/semi-crowns of all-zirconium ceramic, on which orthodontic brackets were bonded, 10 metallic and 10 ceramic polycrystalline brackets, were prepared for this research. SBS has been testedby Universal Testing Machine, with a load applied using a knife edged rod moving at a fixed rate of 1 mm/min, until failure occurred. The force required to debond the brackets was recorded in Newton, then SBS was calculated to MPa. In addition, the samples were analyzed using a digital camera magnifier to determine Adhesive Remnant Index (ARI). Statistical data were processed using t-test, and the level of significance was set at α = 0.05. Results Higher shear bond strength values were observed in metallic brackets bonded to zirconium crowns compared tothoseof ceramic brackets, with a significant difference. During the test, two of the ceramic brackets were partially or totally damaged. Conclusion Metallic brackets, compared to ceramic polycrystalline brackets, seemed tocreate stronger adhesion with all-zirconium surfaces due to their better retention mode. Also, ceramic brackets showed higher fragility during debonding. PMID:28827846

Shear Bond Strength of Orthodontic Brackets Bonded to Zirconium Crowns.

PubMed

Mehmeti, Blerim; Azizi, Bleron; Kelmendi, Jeta; Iljazi-Shahiqi, Donika; Alar, Željko; Anić-Milošević, Sandra

2017-06-01

An increasing demand for esthetic restorations has resulted in an increased use of all-ceramic restorations, such as zirconium. However, one of the challenges the orthodontist must be willing to face is how to increase bond strength between the brackets and various ceramic restorations.Bond strength can beaffected bybracket type, by the material that bracketsaremade of, and their base surface design or retention mode. ​: A im: of this study was to perform a comparative analysis of the shear bond strength (SBS) of metallic and ceramic orthodontic brackets bonded to all-zirconium ceramic surfaces used for prosthetic restorations, and also to evaluate the fracture mode of these two types of orthodontic brackets. Twenty samples/semi-crowns of all-zirconium ceramic, on which orthodontic brackets were bonded, 10 metallic and 10 ceramic polycrystalline brackets, were prepared for this research. SBS has been testedby Universal Testing Machine, with a load applied using a knife edged rod moving at a fixed rate of 1 mm/min, until failure occurred. The force required to debond the brackets was recorded in Newton, then SBS was calculated to MPa. In addition, the samples were analyzed using a digital camera magnifier to determine Adhesive Remnant Index (ARI). Statistical data were processed using t-test, and the level of significance was set at α = 0.05. Higher shear bond strength values were observed in metallic brackets bonded to zirconium crowns compared tothoseof ceramic brackets, with a significant difference. During the test, two of the ceramic brackets were partially or totally damaged. Metallic brackets, compared to ceramic polycrystalline brackets, seemed tocreate stronger adhesion with all-zirconium surfaces due to their better retention mode. Also, ceramic brackets showed higher fragility during debonding.

Stretched graphene tented by polycaprolactone and polypyrrole net-bracket for neurotransmitter detection

NASA Astrophysics Data System (ADS)

Wang, Zhenzhen; Ying, Ye; Li, Li; Xu, Ting; Wu, Yiping; Guo, Xiaoyu; Wang, Feng; Shen, Haojie; Wen, Ying; Yang, Haifeng

2017-02-01

A net-bracket built out from the core@shell structure of chemically oxidized polypyrrole (PPy) coated electrospun polycaprolactone (PCL) nanofibers, and the following surface modification of a thin layer of positively charged poly(dimethyl diallyl ammonium chloride) (PDDA) has been applied for stretching the reduced graphene oxide (RGO) sheets to some extent with the electrochemical deposition method. The as-formed RGO/PDDA/PCL@PPy nanocomposites were investigated by using scanning electron microscopy, transmission electron microscope, X-ray diffraction and Raman spectroscopy. The graphene tented by the net-bracket showed remarkable electrocatalytic properties in detecting the neurotransmitter dopamine (DA). Low detection limit of 0.34 μM (S/N = 3) with the wide linear detection range from 4 μM to 690 μM was obtained. The successful determination of DA in real urine samples and DA injection were achieved. Such attractive fabrication strategy can be extended to make other graphene sheet-based sensors.

Crystalline and magnetooptical characteristics of (Tb,Bi)3(Fe,Ga)5O12 deposited on (Y,Nd)3Al5O12

NASA Astrophysics Data System (ADS)

Morimoto, Ryohei; Goto, Taichi; Nakamura, Yuichi; Boey Lim, Pang; Uchida, Hironaga; Inoue, Mitsuteru

2018-06-01

We prepared Bi- and Ga-substituted Tb3Fe5O12 (BiGa:TIG) films on a Nd-substituted Y3Al5O12 (Nd:YAG) single crystal substrate by pulsed laser deposition, and investigated their magnetic, optical, and magnetooptical properties. A BiGa:TIG film deposited with a substrate temperature of 700 °C shows the easy axis of magnetization along the out-of-plane direction of the film and the Faraday rotation angle of 900°/cm at a wavelength of 1064 nm. The epitaxial growth of the film is confirmed by X-ray diffraction analysis.

[Precision of three-dimensional printed brackets].

PubMed

Zhang, D; Wang, L C; Zhou, Y H; Liu, X M; Li, J

2017-08-18

This study was based on digital orthodontic diagnosis work flow for indirect bonding transfer tray model design and three-dimensional (3D) printing, and the aim of this paper was to inspect the dimensional accuracyof 3D printed brackets, which is the foundation of the follow up work and hoped that will illuminate the clinical application of the digital orthodontics work flow. The samples which consisted of 14 cases of patients with malocclusion from Department of Orthodontics Peking University were selected, including 8 cases with tooth extraction and 6 cases without tooth extraction. All the 14 patients were taken intra-oral scan (Trios 3Shape, Denmark) and cone-beam computed tomography (CBCT, NewTom 3G volumetric scanner, Aperio Service,Italy)shooting after periodontal treatment. STL data and DICOM data were obtained from intraoral scans and CBCT images.Data segmentation, registration, fusion, automatic tooth arrangement, virtual positioning of orthodontic appliance and conversion the coordinates of malocclusion model were all done with self-programming software. The data of 3D printing model with brackets on it were output finally and printed out with EDEN260V (Objet Geometries, Israel) to make indirect bonding transfer tray. Digital vernier caliper was used to measure the length and width of upper and lower left brackets and buccal tubes on those 3D models after removal of surrounding supporting material by ultrasonic vibration and water-spray. Intra-examiner reliability was assessed by using intra-class correlation coefficients (ICC), and one-sample T test was used to compare the measurements with the standard dimensional data of the brackets. There were significant differences which range in 0.04-0.17 mm between the 13 items out of the 19 measurement items. Except for the length of the lower left premolars'brackets, mean values of the other items were greater than the test value. Although the measurement results in the width of brackets and the width and

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

NASA Astrophysics Data System (ADS)

Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

2016-02-01

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Laser debonding of ceramic brackets: a comprehensive review.

PubMed

Azzeh, Ezz; Feldon, Paul J

2003-01-01

Since the invention of the ruby laser in the early 1960s, tremendous advances have been made in optic laser technology. Orthodontists have found various uses for lasers, including the debonding of ceramic brackets. Laser energy degrades the adhesive resin used to bond brackets. Consequently, lower forces can be used than when mechanical debonding is performed, reducing the risk of enamel damage. However, the heat produced by some lasers can damage the tooth pulp. Selecting the appropriate laser, resin, and bracket combination can minimize risks and make debonding more efficient. The purpose of this article is to give the clinician an up-to-date, comprehensive literature review about the clinical characteristics of debonding ceramic brackets with lasers.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

NASA Astrophysics Data System (ADS)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, V M; Garnov, S V; Yagafarov, T F

2014-09-30

CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry tomore » targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)« less

Controllable strain-induced uniaxial anisotropy of Fe{sub 81}Ga{sub 19} films deposited on flexible bowed-substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Guohong; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; School of Science, Nanchang University, Nanchang 330031

2013-11-07

We propose a convenient method to induce a uniaxial anisotropy in magnetostrictive Fe{sub 81}Ga{sub 19} films grown on flexible polyethylene terephthalate (PET) substrates by bending the substrate prior to deposition. A tensile/compressive stress is induced in the Fe{sub 81}Ga{sub 19} films when PET substrates are shaped from concave/convex to flat after deposition. The stressed Fe{sub 81}Ga{sub 19} films exhibit a significant uniaxial magnetic anisotropy due to the internal stress arising from changes in shape of PET substrates. The easy axis is along the tensile stress direction and the coercive field along easy axis is increased with increasing the internal tensilemore » stress. The remanence of hard axis is decreased with increasing the compressive stress, while the coercive field is almost unchanged. A modified Stoner-Wohlfarth model with considering the distribution of easy axes in polycrystalline films is used to account for the magnetic properties tuned by the strain-controlled magnetoelastic anisotropy in flexible Fe{sub 81}Ga{sub 19} films. Our investigations provide a convenient way to induce uniaxial magnetic anisotropy, which is particularly important for fabricating flexible magnetoelectronic devices.« less

Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Shu; Huang Sen; Chen Hongwei

2011-10-31

We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal amore » high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.« less

Preliminary Process Design of ITER ELM Coil Bracket Brazing

NASA Astrophysics Data System (ADS)

LI, Xiangbin; SHI, Yi

2015-03-01

With the technical requirement of the International Thermonuclear Experimental Reactor (ITER) project, the manufacture and assembly technology of the mid Edge Localized Modes (ELM) coil was developed by the Institute of Plasma Physics, Chinese Academy of Science (ASIPP). As the gap between the bracket and the Stainless Steel jacketed and Mineral Insulated Conductor (SSMIC) can be larger than 0.5 mm instead of 0.01 mm to 0.1 mm as in normal industrial cases, the process of mid ELM coil bracket brazing to the SSMICT becomes quiet challenging, from a technical viewpoint. This paper described the preliminary design of ELM coil bracket brazing to the SSMIC process, the optimal bracket brazing curve and the thermal simulation of the bracket furnace brazing method developed by ANSYS. BAg-6 foil (Bag50Cu34Zn16) plus BAg-1a paste (Bag45CuZnCd) solders were chosen as the brazing filler. By testing an SSMICT prototype, it is shown that the average gap between the bracket and the SSMIC could be controlled to 0.2-0.3 mm, and that there were few voids in the brazing surface. The results also verified that the preliminary design had a favorable heat conducting performance in the bracket.

Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Pan, N.; Welser, R. E.; Lutz, C. R.; DeLuca, P. M.; Han, B.; Hong, K.

2001-05-01

Heterojunction bipolar transistors (HBT) are now beginning to be widely incorporated as power amplifiers, laser drivers, multiplexers, clock data recovery circuits, as well as transimpedance and broadband amplifiers in high performance millimeter wave circuits (MMICs). The increasing acceptance of this device is principally due to advancements in metalorganic chemical vapor deposition (MOCVD), device processing, and circuit design technologies. Many of the DC electrical characteristics of large area devices can be directly correlated to the DC performance of small area RF devices. A precise understanding of the growth parameters and their relationship to device characteristics is critical for ensuring the high degree of reproducibility required for low cost high-yield volume manufacturing. Significant improvements in the understanding of the MOCVD growth process have been realized through the implementation of statistical process control on the key HBT device parameters. This tool has been successfully used to maintain the high quality of the device characteristics in high-volume production of 4″ GaAs-based HBTs. There is a growing demand to migrate towards 6″ diameter wafer size due to the potential cost reductions and increased volume production that can be realized. Preliminary results, indicating good heterostructure layer characteristics, demonstrate the feasibility of 6″ InGaP-based HBT devices.

Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-11-01

The interfacial chemical state and the band alignment of the sputtering-deposited CaF2/p-GaN hetero-structure were investigated by angle-resolved X-ray photoelectron spectroscopy. The dependence of Ga 3p core-level positions on the collection angles proves that the downward band bending of p-GaN is reduced from 1.51 to 0.85 eV after the deposition of CaF2, which may be due to the reduction of Mg-Ga-O-related interface states by the oxygen-free deposition of CaF2. The band gap of sputtering-deposited CaF2 is estimated to be about 7.97 eV with a potential gradient of 0.48 eV obtained by the variation of the Ca 2p3/2 position on different collection angles. By taking into account the p-GaN surface band bending and potential gradient in the CaF2 layer, large valence and conduction band offsets of 2.66 ± 0.20 and 1.92 ± 0.20 eV between CaF2 and p-GaN are obtained. These results indicate that CaF2 is a promising gate dielectric layer on the p-GaN for the application of metal-insulator-semiconductor devices.

Wronski Brackets and the Ferris Wheel

NASA Astrophysics Data System (ADS)

Martin, Keye

2005-11-01

We connect the Bayesian order on classical states to a certain Lie algebra on C^infty[0,1]. This special Lie algebra structure, made precise by an idea we introduce called a Wronski bracket, suggests new phenomena the Bayesian order naturally models. We then study Wronski brackets on associative algebras, and in the commutative case, discover the beautiful result that they are equivalent to derivations.

Electrothermal debonding of ceramic brackets. An in vitro study.

PubMed

Brouns, E M; Schopf, P M; Kocjancic, B

1993-04-01

Two different kinds of devices for electrothermal debonding of ceramic brackets are evaluated. Thirty human premolars were bonded with two types of ceramic brackets. Both devices were tested for electrothermal removal of the two bracket types. The pulpal wall temperature increase during electrothermal debonding was recorded in vitro under various circumstances. After debonding, the fracture site was located. The data were compared to the temperature rise after simulated exposure of the teeth to warm beverages. Irreversible pulp damage due to electrothermal debonding of ceramic brackets with both instruments is not to be expected because the obtained results stayed below established primate threshold temperatures and significantly below that of the stimulated control groups. A significant difference was noted when air cooling was initiated during electrothermal debonding. Fracture site location was significantly different in the two ceramic bracket types after electrothermal debonding.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Torque expression of 0.018 and 0.022 inch conventional brackets.

PubMed

Sifakakis, Iosif; Pandis, Nikolaos; Makou, Margarita; Eliades, Theodore; Katsaros, Christos; Bourauel, Christoph

2013-10-01

The aim of this study was to assess the effect of the moments generated with low- and high-torque brackets. Four different bracket prescription-slot combinations of the same bracket type (Mini Diamond® Twin) were evaluated: high-torque 0.018 and 0.022 inch and low-torque 0.018 and 0.022 inch. These brackets were bonded on identical maxillary acrylic resin models with levelled and aligned teeth and each model was mounted on the orthodontic measurement and simulation system (OMSS). Ten specimens of 0.017 × 0.025 inch and ten 0.019 × 0.025 inch stainless steel archwires (ORMCO) were evaluated in the low- and high-torque 0.018 inch and 0.022 inch brackets, respectively. The wires were ligated with elastomerics into the brackets and each measurement was repeated once after religation. Two-way analysis of variance and t-test were conducted to compare the generated moments between wires at low- and high-torque brackets separately. The maximum moment generated by the 0.017 × 0.025 inch stainless steel archwire in the 0.018 inch brackets at +15 degrees ranged from 14.33 and 12.95 Nmm for the high- and low-torque brackets, respectively. The measured torque in the 0.022 inch brackets with the 0.019 × 0.025 inch stainless steel archwire was 9.32 and 6.48 Nmm, respectively. The recorded differences of maximum moments between the high- and low-torque series were statistically significant. High-torque brackets produced higher moments compared with low-torque brackets. Additionally, in both high- and low-torque configurations, the thicker 0.019 × 0.025 inch steel archwire in the 0.022 inch slot system generated lower moments in comparison with the 0.017 × 0.025 inch steel archwire in the 0.018 inch slot system.

The Effect of Bracket Base Pylon Orientation on the Shear Bond Strength of the ODP ANCHOR-LOCK Bracket Pad

DTIC Science & Technology

2013-06-06

El Banna MS, Elsaka SE. Twelve-month bracket failure rate with amorphous calcium phosphate bonding system. Eur J Orthod 2012; doi:10.1093/ejo...material, Cambridge University Press. 1993;3. Willems G, Carels CEL, Verbeke G. In vitro peel /shear bond strength evaluation of orthodontic bracket

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Metallurgical characterization of orthodontic brackets produced by Metal Injection Molding (MIM).

PubMed

Zinelis, Spiros; Annousaki, Olga; Makou, Margarita; Eliades, Theodore

2005-11-01

The aim of this study was to investigate the bonding base surface morphology, alloy type, microstructure, and hardness of four types of orthodontic brackets produced by Metal Injection Molding technology (Discovery, Extremo, Freedom, and Topic). The bonding base morphology of the brackets was evaluated by scanning electron microscopy (SEM). Brackets from each manufacturer were embedded in epoxy resin, and after metallographic grinding, polishing and coating were analyzed by x-ray energy-dispersive spectroscopic (EDS) microanalysis to assess their elemental composition. Then, the brackets were subjected to metallographic etching to reveal their metallurgical structure. The same specimen surfaces were repolished and used for Vickers microhardness measurements. The results were statistically analyzed with one-way analysis of variance and Student-Newman-Keuls multiple comparison test at the 0.05 level of significance. The findings of SEM observations showed a great variability in the base morphology design among the brackets tested. The x-ray EDS analysis demonstrated that each bracket was manufactured from different ferrous or Co-based alloys. Metallographic analysis showed the presence of a large grain size for the Discovery, Freedom, and Topic brackets and a much finer grain size for the Extremo bracket. Vickers hardness showed great variations among the brackets (Topic: 287 +/- 16, Freedom: 248 +/- 13, Discovery: 214 +/- 12, and Extremo: 154 +/- 9). The results of this study showed that there are significant differences in the base morphology, composition, microstructure, and microhardness among the brackets tested, which may anticipate significant clinical implications.

Tool Releases Optical Elements From Spring Brackets

NASA Technical Reports Server (NTRS)

Gum, J. S.

1984-01-01

Threaded hooks retract bracket arms holding element. Tool uses three hooks with threaded shanks mounted in ring-shaped holder to pull on tabs to release optical element. One person can easily insert or remove optical element (such as prism or lens) from spring holder or bracket with minimal risk of damage.

21 CFR 872.3750 - Bracket adhesive resin and tooth conditioner.

Code of Federal Regulations, 2011 CFR

2011-04-01

... composed of an adhesive compound, such as polymethylmethacrylate, intended to cement an orthodontic bracket... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Bracket adhesive resin and tooth conditioner. 872... SERVICES (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3750 Bracket adhesive resin...

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

NASA Astrophysics Data System (ADS)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga 2O 3 thin films grown by pulsed laser deposition

DOE PAGES

Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; ...

2016-11-21

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependencemore » to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.« less

21 CFR 872.3750 - Bracket adhesive resin and tooth conditioner.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Bracket adhesive resin and tooth conditioner. 872... SERVICES (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3750 Bracket adhesive resin and tooth conditioner. (a) Identification. A bracket adhesive resin and tooth conditioner is a device...

A subjective comparison of two lingual bracket systems.

PubMed

Stamm, Thomas; Hohoff, Ariane; Ehmer, Ulrike

2005-08-01

The purpose of this prospective, longitudinal study was to compare the influence of two lingual bracket systems on subjective oral comfort, speech, mastication and oral hygiene. Forty-two native speakers of standard German (32 females, 10 males; mean age 27.1 years, standard deviation 12.2) were enrolled and completed a standardized questionnaire directly before insertion of lingual brackets (T0), within 24 hours of bond-up (T1) and 3 months (+/- 1 week) later (T2). Eighteen of the patients were treated with prefabricated brackets (Ormco, seventh generation) (PB group) and 24 with customized brackets (Incognito) (CB group). While no significant intergroup differences were recorded at any of the times with respect to tongue position, conversation pattern, swallowing or oral hygiene, the CB group experienced significantly fewer tongue space restrictions, speech disturbances and impairments in chewing and biting than the PB group at T1 and T2. At T2, pressure sores, reddening or lesions to the tongue were recorded significantly less often in the CB group than in the PB group. This enhanced patient comfort in the CB group was attributed to the smaller dimensions of the customized brackets. This aspect could play a role in attracting more patients to lingual orthodontics in the future. Information given to the patient on the duration and extent of the restrictions associated with lingual orthodontics must be differentiated according to the bracket system used.

Laboratory evaluations on thermal debonding of ceramic brackets.

PubMed

Sernetz, F; Kraut, J

1991-01-01

The purpose of this laboratory study was to define the working parameters and physiological safety and efficacy of the Dentaurum Ceramic Debonding Unit. Extracted mandibular incisors were utilized because of their low thermal mass and low heat sensitivity. The teeth were embedded in plastic and placed on a turning force measuring apparatus. An electrothermal element was placed in the pulp chamber (filled with a conducting paste). The thermoelement temperature was registered on y-t recorder as was the turning momentum required to remove the ceramic brackets with the Dentaurum Ceramic Debonding Unit. Ceramic brackets from GAC (Allure III), Unitek (Transcend) and Dentaurum (Fascination) using one and two component adhesives (Monolok, Concise), were tested. Scanning electron microscopic views taken after debonding showed predictable (and favorable) adhesive failure at the bracket base/resin interface. No enamel damage was demonstrated. All brackets were removable under three seconds with a clinically reproducible turning force of 85-100 Nmm allowing for intrapulpal temperature increases under the 5 degrees C biocompatible threshold. The Dentaurum Ceramic Debonding Unit provided a safe, reliable, efficient modality of removing ceramic brackets while maintaining a physiologically acceptable rise in pulpal temperature without damage to tooth enamel or pulpal tissue.

Can 10% hydrofluoric acid be used for reconditioning of orthodontic brackets?

PubMed

Pompeo, Daniela D; Rosário, Henrique D; Lopes, Beatriz Mv; Cesar, Paulo F; Paranhos, Luiz Renato

2016-01-01

Bracket debonding is a common problem during orthodontic treatment. This type of failure is associated to masticatory forces, poor adhesion, and the need for repositioning the piece. The objective of this work was to compare the shear bond strength of debonded brackets that were reconditioned using different protocols (alumina blasting versus hydrofluoric etching). This was an in vitro experimental study with 45 stainless steel orthodontic brackets. They were randomly divided into three groups: (1) New brackets (n = 15), (2) brackets reconditioned using 10% hydrofluoric acid for 60 s (n = 15), and (3) brackets reconditioned by aluminum oxide blasting until complete removal of the remaining resin (n = 15). In Groups 2 and 3, the insertion of composite resin proceeded in two stages to simulate a type of bracket failure in which the bonding resin was left at the bracket base. For the shear test, the assembly composed by the metallic support, and specimen was taken to the Instron universal testing machine in which the specimens were loaded using a semicircle-shaped active tip in the region of the bonding interface parallel to the surface of the bracket at a speed of 0.5 mm/min. The data were subjected to D'Agostino's normality test to have their distribution checked. Analysis of variance and Tukey's test (P < 0.01) were used to compare the findings between groups. The results indicated that Group 1 (new brackets) showed higher bond strength than that obtained for the group treated with hydrofluoric acid (Group 2, P < 0.01). The bond strength value obtained for the group treated with alumina blasting (Group 3) was statistically similar to those obtained for Groups 1 and 2. The aluminum oxide blasting technique was effective for the reconditioning of orthodontic brackets. Nevertheless, the reconditioning technique using 10% fluoridric acid for 60 s was not efficient for clinical use.

Structural and optical characterization of terbium doped ZnGa{sub 2}O{sub 4} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Somasundaram, K.; Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi-642001; Girija, K. G., E-mail: kgirija@barc.gov.in

2016-05-23

Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa{sub 2}O{sub 4} host emission band along with a strong terbium emission and the thin films showedmore » only broad host emission band and there was no terbium ion emission.« less

Corrosion behavior of self-ligating and conventional metal brackets.

PubMed

Maia, Lúcio Henrique Esmeraldo Gurgel; Lopes Filho, Hibernon; Ruellas, Antônio Carlos de Oliveira; Araújo, Mônica Tirre de Souza; Vaitsman, Delmo Santiago

2014-01-01

To test the null hypothesis that the aging process in self-ligating brackets is not higher than in conventional brackets. Twenty-five conventional (GN-3M/Unitek; GE-GAC; VE-Aditek) and 25 self-ligating (SCs-3M/Unitek; INs-GAC; ECs-Aditek) metal brackets from three manufacturers (n = 150) were submitted to aging process in 0.9% NaCl solution at a constant temperature of 37 ± 1°C for 21 days. The content of nickel, chromium and iron ions in the solution collected at intervals of 7, 14 and 21 days was quantified by atomic absorption spectrophotometry. After the aging process, the brackets were analyzed by scanning electron microscopy (SEM) under 22X and 1,000X magnifications. Comparison of metal release in self-ligating and conventional brackets from the same manufacturer proved that the SCs group released more nickel (p < 0.05) than the GN group after 7 and 14 days, but less chromium (p < 0.05) after 14 days and less iron (p < 0.05) at the three experimental time intervals. The INs group released less iron (p < 0.05) than the GE group after 7 days and less nickel, chromium and iron (p < 0.05) after 14 and 21 days. The ECs group released more nickel, chromium and iron (p < 0.05) than the VE group after 14 days, but released less nickel and chromium (p < 0.05) after 7 days and less chromium and iron (p < 0.05) after 21 days. The SEM analysis revealed alterations on surface topography of conventional and self-ligating brackets. The aging process in self-ligating brackets was not greater than in conventional brackets from the same manufacturer. The null hypothesis was accepted.

Corrosion behavior of self-ligating and conventional metal brackets

PubMed Central

Maia, Lúcio Henrique Esmeraldo Gurgel; Lopes Filho, Hibernon; Ruellas, Antônio Carlos de Oliveira; Araújo, Mônica Tirre de Souza; Vaitsman, Delmo Santiago

2014-01-01

Objective To test the null hypothesis that the aging process in self-ligating brackets is not higher than in conventional brackets. Methods Twenty-five conventional (GN-3M/Unitek; GE-GAC; VE-Aditek) and 25 self-ligating (SCs-3M/Unitek; INs-GAC; ECs-Aditek) metal brackets from three manufacturers (n = 150) were submitted to aging process in 0.9% NaCl solution at a constant temperature of 37 ± 1ºC for 21 days. The content of nickel, chromium and iron ions in the solution collected at intervals of 7, 14 and 21 days was quantified by atomic absorption spectrophotometry. After the aging process, the brackets were analyzed by scanning electron microscopy (SEM) under 22X and 1,000X magnifications. Results Comparison of metal release in self-ligating and conventional brackets from the same manufacturer proved that the SCs group released more nickel (p < 0.05) than the GN group after 7 and 14 days, but less chromium (p < 0.05) after 14 days and less iron (p < 0.05) at the three experimental time intervals. The INs group released less iron (p < 0.05) than the GE group after 7 days and less nickel, chromium and iron (p < 0.05) after 14 and 21 days. The ECs group released more nickel, chromium and iron (p < 0.05) than the VE group after 14 days, but released less nickel and chromium (p < 0.05) after 7 days and less chromium and iron (p < 0.05) after 21 days. The SEM analysis revealed alterations on surface topography of conventional and self-ligating brackets. Conclusions The aging process in self-ligating brackets was not greater than in conventional brackets from the same manufacturer. The null hypothesis was accepted. PMID:24945521

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, N.; Osada, T.

2014-07-21

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap ofmore » less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.« less

Quantization with maximally degenerate Poisson brackets: the harmonic oscillator!

NASA Astrophysics Data System (ADS)

Nutku, Yavuz

2003-07-01

Nambu's construction of multi-linear brackets for super-integrable systems can be thought of as degenerate Poisson brackets with a maximal set of Casimirs in their kernel. By introducing privileged coordinates in phase space these degenerate Poisson brackets are brought to the form of Heisenberg's equations. We propose a definition for constructing quantum operators for classical functions, which enables us to turn the maximally degenerate Poisson brackets into operators. They pose a set of eigenvalue problems for a new state vector. The requirement of the single-valuedness of this eigenfunction leads to quantization. The example of the harmonic oscillator is used to illustrate this general procedure for quantizing a class of maximally super-integrable systems.

Histologic investigation of the human pulp after thermodebonding of metal and ceramic brackets.

PubMed

Jost-Brinkmann, P G; Stein, H; Miethke, R R; Nakata, M

1992-11-01

Twenty-five human permanent teeth scheduled for extraction for orthodontic reasons were used to study the effect of thermodebonding on the pulp tissue. One week before brackets were removed the teeth were bonded with either metal or ceramic brackets, with two alternative adhesives. For debonding, three different techniques were used: (1) debonding of ceramic brackets warmed up indirectly by resistance heating of a metallic bow applied to the bracket slot, (2) debonding of metal brackets warmed up directly by inductive heating of the bracket itself, and (3) debonding of ceramic brackets warmed up indirectly by inductive heating of metallic plier tips, applied to the mesial and distal bracket surfaces. Teeth with metal brackets removed without heat by squeezing the wings together served as a control group. The teeth were extracted 24 hours after debonding and subjected to a light microscopic study after histologic preparation and staining. In addition, the location of adhesive remnants was evaluated. While the thermodebonding of metal brackets worked properly and without any obvious pulp damage, there were problems related to the thermodebonding of ceramic brackets: (1) if more than one heating cycle was necessary, several teeth showed localized damage of the pulp with slight infiltration of inflammatory cells, (2) bracket fractures occurred frequently, and enamel damage could be shown, and (3) often with Transbond (Unitek/3M, Monrovia, Calif.) as the adhesive, more than one heating cycle was necessary for bracket removal, and thus patients complained about pain.

In vitro evaluation of corrosion and cytotoxicity of orthodontic brackets.

PubMed

Costa, M T; Lenza, M A; Gosch, C S; Costa, I; Ribeiro-Dias, F

2007-05-01

The corrosion resistance of AISI 304 stainless steel (AISI 304 SS) and manganese stainless steel (low-nickel SS) brackets in artificial saliva was investigated. The cytotoxic effects of their corrosion products on L929 cell culture were compared by two assays, crystal violet, to evaluate cell viability, and MTT (3-[4,5-dimethylthiazol-2-yl]2,5-diphenyltetrazolium bromide), for cell metabolism and proliferation. The atomic absorption spectroscopic analysis of the corrosion products demonstrated that nickel and manganese ion concentrations were higher for the AISI 304 SS-bracket immersion solution as compared with the low-nickel SS brackets. Scanning electron microscopy and energy-dispersive spectroscopy demonstrated less corrosion resistance for the AISI 304 SS brackets. Although none of the bracket extracts altered L929 cell viability or morphology, the AISI 304 SS-bracket extracts decreased cellular metabolism slightly. The results indicated that the low-nickel SS presents better in vitro biocompatibility than AISI 304 SS brackets. Abbreviations used: AISI, American Iron and Steel Institute; EDS, energy-dispersive spectroscopy; OD, optical density; ISO, International Organization for Standardization; MTT, (3-{4,5 dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide; NiSO(4), nickel sulfate; SEM, standard error of the mean; WHO, World Health Organization; and TNF, tumor necrosis factor.

Effect of Er:YAG Laser and Sandblasting in Recycling of Ceramic Brackets.

PubMed

Yassaei, Soghra; Aghili, Hossein; Hosseinzadeh Firouzabadi, Azadeh; Meshkani, Hamidreza

2017-01-01

Introduction: This study was performed to determine the shear bond strength of rebonded mechanically retentive ceramic brackets after recycling with Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser or sandblasting. Methods: Twenty-eight debonded ceramic brackets plus 14 intact new ceramic brackets were used in this study. Debonded brackets were randomly divided into 2 groups of 14. One group was treated by Er:YAG laser and the other with sandblasting. All the specimens were randomly bonded to 42 intact human upper premolars. The shear bond strength of all specimens was determined with a universal testing machine at a crosshead speed of 0.5 mm/min until bond failure occurred. The recycled bracket base surfaces were observed under a scanning electron microscope (SEM). Analysis of variance (ANOVA) and Tukey tests were used to compare the shear bond strength of the 3 groups. Fisher exact test was used to evaluate the differences in adhesive remnant index (ARI) scores. Results: The highest bond strength belonged to brackets recycled by Sandblasting (16.83 MPa). There was no significant difference between the shear bond strength of laser and control groups. SEM photographs showed differences in 2 recycling methods. The laser recycled bracket appeared to have as well-cleaned base as the new bracket. Although the sandblasted bracket photographs showed no remnant adhesives, remarkable micro-roughening of the base of the bracket was apparent. Conclusion: According to the results of this study, both Er:YAG laser and sandblasting were efficient to mechanically recondition retentive ceramic brackets. Also, Er:YAG laser did not change the design of bracket base while removing the remnant adhesives which might encourage its application in clinical practice.

Effect of Er:YAG Laser and Sandblasting in Recycling of Ceramic Brackets

PubMed Central

Yassaei, Soghra; Aghili, Hossein; Hosseinzadeh Firouzabadi, Azadeh; Meshkani, Hamidreza

2017-01-01

Introduction: This study was performed to determine the shear bond strength of rebonded mechanically retentive ceramic brackets after recycling with Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser or sandblasting. Methods: Twenty-eight debonded ceramic brackets plus 14 intact new ceramic brackets were used in this study. Debonded brackets were randomly divided into 2 groups of 14. One group was treated by Er:YAG laser and the other with sandblasting. All the specimens were randomly bonded to 42 intact human upper premolars. The shear bond strength of all specimens was determined with a universal testing machine at a crosshead speed of 0.5 mm/min until bond failure occurred. The recycled bracket base surfaces were observed under a scanning electron microscope (SEM). Analysis of variance (ANOVA) and Tukey tests were used to compare the shear bond strength of the 3 groups. Fisher exact test was used to evaluate the differences in adhesive remnant index (ARI) scores. Results: The highest bond strength belonged to brackets recycled by Sandblasting (16.83 MPa). There was no significant difference between the shear bond strength of laser and control groups. SEM photographs showed differences in 2 recycling methods. The laser recycled bracket appeared to have as well-cleaned base as the new bracket. Although the sandblasted bracket photographs showed no remnant adhesives, remarkable micro-roughening of the base of the bracket was apparent. Conclusion: According to the results of this study, both Er:YAG laser and sandblasting were efficient to mechanically recondition retentive ceramic brackets. Also, Er:YAG laser did not change the design of bracket base while removing the remnant adhesives which might encourage its application in clinical practice. PMID:28912939

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

2016-01-01

This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique.

PubMed

Kumar, Mukesh; Kumar, Vikram; Singh, R

2017-12-01

Diameter tuning of [Formula: see text]-Ga 2 O 3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga 2 O 3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

Bond strengths evaluation of laser ceramic bracket debonding

NASA Astrophysics Data System (ADS)

Dostalová, T.; Jelinková, H.; Šulc, J.; Němec, M.; Fibrich, M.; Jelínek, M.; Michalík, P.; Bučková, M.

2012-09-01

Ceramic brackets often used for an orthodontic treatment can lead to problems such as enamel tear outs because of their low fracture resistance and high bond strengths. Therefore the aim of our study was to investigate the positive laser radiation effect on bracket debonding. Moreover, the influence of the enamel shape surface under the bracket and laser radiation power on the debonding strength was investigated. The source of the radiation was the longitudinally diode-pumped Tm:YAP laser operating at 1997 nm. To eliminate the tooth surface roughness the flat enamel surface was prepared artificially and the bracket was bonded on it. The debonding was accomplished by Tm:YAP laser radiation with different the power value while recording the temperature rise in the pulp. To simulate the debonding process in vivo the actual bond strength was measured by the digital force gauge. The results were analyzed by scanning electron microscope.

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

NASA Astrophysics Data System (ADS)

Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

2014-10-01

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Optimization of sputter deposition parameters for magnetostrictive Fe62Co19Ga19/Si(100) films

NASA Astrophysics Data System (ADS)

Jen, S. U.; Tsai, T. L.

2012-04-01

A good magnetostrictive material should have large saturation magnetostriction (λS) and low saturation (or anisotropy) field (HS), such that its magnetostriction susceptibility (SH) can be as large as possible. In this study, we have made Fe62Co19Ga19/Si(100) nano-crystalline films by using the dc magnetron sputtering technique under various deposition conditions: Ar working gas pressure (pAr) was varied from 1 to 15 mTorr; sputtering power (Pw) was from 10 to 120 W; deposition temperature (TS) was from room temperature (RT) to 300 °C, The film thickness (tf) was fixed at 175 nm. Each magnetic domain looked like a long leaf, with a long-axis of about 12-15 μm and a short-axis of about 1.5 μm. The optimal magnetic and electrical properties were found from the Fe62Co19Ga19 film made with the sputter deposition parameters of pAr = 5 mTorr, Pw = 80 W, and TS = RT. Those optimal properties include λS = 80 ppm, HS = 19.8 Oe, SH = 6.1 ppm/Oe, and electrical resistivity ρ = 57.0 μΩ cm. Note that SH for the conventional magnetostrictive Terfenol-D film is, in general, equal to 1.5 ppm/Oe only.

A quantitative AFM analysis of nano-scale surface roughness in various orthodontic brackets.

PubMed

Lee, Gi-Ja; Park, Ki-Ho; Park, Young-Guk; Park, Hun-Kuk

2010-10-01

In orthodontics, the surface roughnesses of orthodontic archwire and brackets affect the effectiveness of arch-guided tooth movement, corrosion behavior, and the aesthetics of orthodontic components. Atomic force microscopy (AFM) measurements were used to provide quantitative information on the surface roughness of the orthodontic material. In this study, the changes in surface roughness of various orthodontic bracket slots before and after sliding movement of archwire in vitro and in vivo were observed through the utilization of AFM. Firstly, we characterized the surface of four types of brackets slots as follows: conventional stainless steel (Succes), conventional ceramic (Perfect), self-ligating stainless steel (Damon) and self-ligating ceramic (Clippy-C) brackets. Succes) and Damon brackets showed relatively smooth surfaces, while Perfect had the roughest surface among the four types of brackets used. Secondly, after in vitro sliding test with beta titanium wire in two conventional brackets (Succes and Perfect), there were significant increases in only stainless steel bracket, Succes. Thirdly, after clinical orthodontic treatment for a maximum of 2 years, the self-ligating stainless steel bracket, Damon, showed a significant increase in surface roughness. But self-ligating ceramic brackets, Clippy-C, represented less significant changes in roughness parameters than self-ligating stainless steel ones. Based on the results of the AFM measurements, it is suggested that the self-ligating ceramic bracket has great possibility to exhibit less friction and better biocompatibility than the other tested brackets. This implies that these bracket slots will aid in the effectiveness of arch-guided tooth movement.

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

PubMed

Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

2015-12-01

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Gang

2017-10-01

Gallium oxide thin films of β and ε phase were grown on c-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type ε-Ga2O3. Further structure analysis revealed that the epitaxial relationship between ε-Ga2O3 and c-plane sapphire is ε-Ga2O3 (0001) || Al2O3 (0001) and ε-Ga2O3 || Al2O3 . The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored ε phase. Based on these results, a Ga2O3 thin film with a phase-pure ε-Ga2O3 upper layer was successfully obtained.

Air-powder polishing on self-ligating brackets after clinical use: effects on debris levels.

PubMed

Aragón, Mônica L S Castro; Lima, Leandro Santiago; Normando, David

2016-01-01

Debris buildup on brackets and arch surfaces is one of the main factors that can influence the intensity of friction between bracket and orthodontic wire. This study sought to evaluate the effect of air-powder polishing cleaning on debris levels of self-ligating ceramic brackets at the end of orthodontic treatment, compared to the behavior of conventional brackets. Debris levels were evaluated in metal conventional orthodontic brackets (n = 42) and ceramic self-ligating brackets (n = 42) on canines and premolars, arranged in pairs. There were brackets with and without air-powder polishing. At the end of orthodontic treatment, a hemiarch served as control and the contralateral hemiarch underwent prophylaxis with air-powder polishing. Debris buildup in bracket slots was assessed through images, and Wilcoxon test was used to analyze the results. The median debris levels were statistically lower in the conventional metal brackets compared to self-ligating ones (p = 0.02), regarding brackets not submitted to air-powder polishing. Polishing significantly reduced debris buildup to zero in both systems, without differences between groups. Ceramic self-ligating brackets have a higher debris buildup in comparison to conventional metal brackets in vivo, but prophylaxis with sodium bicarbonate jet was effective in reducing debris levels in self-ligating and also in conventional brackets.

Prototype to measure bracket debonding force in vivo

PubMed Central

Tonus, Jéssika Lagni; Manfroi, Fernanda Borguetti; Borges, Gilberto Antonio; Grigolo, Eduardo Correa; Helegda, Sérgio; Spohr, Ana Maria

2017-01-01

ABSTRACT Introduction: Material biodegradation that occurs in the mouth may interfere in the bonding strength between the bracket and the enamel, causing lower bond strength values in vivo, in comparison with in vitro studies. Objective: To develop a prototype to measure bracket debonding force in vivo and to evaluate, in vitro, the bond strength obtained with the prototype. Methods: A original plier (3M Unitek) was modified by adding one strain gauge directly connected to its claw. An electronic circuit performed the reading of the strain gauge, and the software installed in a computer recorded the values of the bracket debonding force, in kgf. Orthodontic brackets were bonded to the facial surface of 30 bovine incisors with adhesive materials. In Group 1 (n = 15), debonding was carried out with the prototype, while tensile bond strength testing was performed in Group 2 (n = 15). A universal testing machine was used for the second group. The adhesive remnant index (ARI) was recorded. Results: According to Student’s t test (α = 0.05), Group 1 (2.96 MPa) and Group 2 (3.08 MPa) were not significantly different. ARI score of 3 was predominant in the two groups. Conclusion: The prototype proved to be reliable for obtaining in vivo bond strength values for orthodontic brackets. PMID:28444011

Prototype to measure bracket debonding force in vivo.

PubMed

Tonus, Jéssika Lagni; Manfroi, Fernanda Borguetti; Borges, Gilberto Antonio; Grigolo, Eduardo Correa; Helegda, Sérgio; Spohr, Ana Maria

2017-02-01

Material biodegradation that occurs in the mouth may interfere in the bonding strength between the bracket and the enamel, causing lower bond strength values in vivo, in comparison with in vitro studies. To develop a prototype to measure bracket debonding force in vivo and to evaluate, in vitro, the bond strength obtained with the prototype. A original plier (3M Unitek) was modified by adding one strain gauge directly connected to its claw. An electronic circuit performed the reading of the strain gauge, and the software installed in a computer recorded the values of the bracket debonding force, in kgf. Orthodontic brackets were bonded to the facial surface of 30 bovine incisors with adhesive materials. In Group 1 (n = 15), debonding was carried out with the prototype, while tensile bond strength testing was performed in Group 2 (n = 15). A universal testing machine was used for the second group. The adhesive remnant index (ARI) was recorded. According to Student's t test (α = 0.05), Group 1 (2.96 MPa) and Group 2 (3.08 MPa) were not significantly different. ARI score of 3 was predominant in the two groups. The prototype proved to be reliable for obtaining in vivo bond strength values for orthodontic brackets.

Comparison of frictional resistance of esthetic and semi-esthetic self-ligating brackets

PubMed Central

Kannan, M. S.; Murali, R. V.; Kishorekumar, S.; Gnanashanmugam, K.; Jayanth, V.

2015-01-01

Aim: The frictional resistance encountered during sliding mechanics has been well established in the orthodontic literature, and it consists of complex interactions between the bracket, archwire, and method of ligation the claim of reduced friction with self-ligating brackets is often cited as a primary advantage over conventional brackets. This study was done to compare and evaluate the frictional forces generated between fully esthetic brackets and semi-aesthetic self-ligating brackets, which are of passive form and SEM (scanning electron microscope) study of the Brackets after Frictional evaluation. Materials and Methods: Two types of self-ligating esthetic brackets, Damon clear (Ormco) made of fully ceramic and Opal (Ultradent Products, USA) and, Two types of self-ligating semi-esthetic brackets, Clarity SL (3M Unitek) and Damon 3 (Ormco) both of which are made of ceramic with metal slot. Arch wires with different dimensions and quality 17 × 25, 19 × 25 Titanium Molybdenum Alloy (TMA) and 17 × 25, 19 × 25 stainless steel that came from plain strands of wire were used for frictional comparison test. The brackets used in this study had 0.022 × 0.028 inch slot. Results: The statistical tests showed significantly smaller amount of kinetic frictional forces is generated by Damon 3 (semi-esthetic self-ligating brackets). For each wire used, Damon 3 displayed significantly lower frictional forces (P ≤ 0.05) than any of the self-ligating system, followed by Opal (fully esthetic self-ligating brackets) which generated smaller amount of frictional forces but relatively on the higher side when compared with Damon 3. Damon clear (fully esthetic self-ligating brackets) generated the maximum amount of kinetic forces with all types of wire dimensions and properties when compared to the other three types of self-ligating system. Clarity SL (semi-esthetic self-ligating brackets) generated smaller amount of frictional forces when compared with Damon clear and relatively

Comparison of frictional resistance of esthetic and semi-esthetic self-ligating brackets.

PubMed

Kannan, M S; Murali, R V; Kishorekumar, S; Gnanashanmugam, K; Jayanth, V

2015-04-01

The frictional resistance encountered during sliding mechanics has been well established in the orthodontic literature, and it consists of complex interactions between the bracket, archwire, and method of ligation the claim of reduced friction with self-ligating brackets is often cited as a primary advantage over conventional brackets. This study was done to compare and evaluate the frictional forces generated between fully esthetic brackets and semi-aesthetic self-ligating brackets, which are of passive form and SEM (scanning electron microscope) study of the Brackets after Frictional evaluation. Two types of self-ligating esthetic brackets, Damon clear (Ormco) made of fully ceramic and Opal (Ultradent Products, USA) and, Two types of self-ligating semi-esthetic brackets, Clarity SL (3M Unitek) and Damon 3 (Ormco) both of which are made of ceramic with metal slot. Arch wires with different dimensions and quality 17 × 25, 19 × 25 Titanium Molybdenum Alloy (TMA) and 17 × 25, 19 × 25 stainless steel that came from plain strands of wire were used for frictional comparison test. The brackets used in this study had 0.022 × 0.028 inch slot. The statistical tests showed significantly smaller amount of kinetic frictional forces is generated by Damon 3 (semi-esthetic self-ligating brackets). For each wire used, Damon 3 displayed significantly lower frictional forces (P ≤ 0.05) than any of the self-ligating system, followed by Opal (fully esthetic self-ligating brackets) which generated smaller amount of frictional forces but relatively on the higher side when compared with Damon 3. Damon clear (fully esthetic self-ligating brackets) generated the maximum amount of kinetic forces with all types of wire dimensions and properties when compared to the other three types of self-ligating system. Clarity SL (semi-esthetic self-ligating brackets) generated smaller amount of frictional forces when compared with Damon clear and relatively higher amount of frictional forces

Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition

NASA Astrophysics Data System (ADS)

Yen, Shih-Hsiang; Hung, Yu-Chen; Yeh, Ping-Hung; Su, Ya-Wen; Wang, Chiu-Yen

2017-09-01

ZnS nanowires were synthesized via a vapor-liquid-solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω-1 cm-1, 13.14 cm2 V-1 s-1and 4.27 × 1018 cm-3, respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 106 A W-1, 2.43 × 107, 9 s and 24 s, respectively. Temperature-dependent I-V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I-V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

Color stability of ceramic brackets immersed in potentially staining solutions

PubMed Central

Guignone, Bruna Coser; Silva, Ludimila Karsbergen; Soares, Rodrigo Villamarim; Akaki, Emilio; Goiato, Marcelo Coelho; Pithon, Matheus Melo; Oliveira, Dauro Douglas

2015-01-01

OBJECTIVE: To assess the color stability of five types of ceramic brackets after immersion in potentially staining solutions. METHODS: Ninety brackets were divided into 5 groups (n = 18) according to brackets commercial brands and the solutions in which they were immersed (coffee, red wine, coke and artificial saliva). The brackets assessed were Transcend (3M/Unitek, Monrovia, CA, USA), Radiance (American Orthodontics, Sheboygan, WI, USA), Mystique (GAC International Inc., Bohemia, NY, USA) and Luxi II (Rocky Mountain Orthodontics, Denver, CO, USA). Chromatic changes were analyzed with the aid of a reflectance spectrophotometer and by visual inspection at five specific time intervals. Assessment periods were as received from the manufacturer (T0), 24 hours (T1), 72 hours (T2), as well as 7 days (T3) and 14 days (T4) of immersion in the aforementioned solutions. Results were submitted to statistical analysis with ANOVA and Bonferroni correction, as well as to a multivariate profile analysis for independent and paired samples with significance level set at 5%. RESULTS: The duration of the immersion period influenced color alteration of all tested brackets, even though these changes could not always be visually observed. Different behaviors were observed for each immersion solution; however, brackets immersed in one solution progressed similarly despite minor variations. CONCLUSIONS: Staining became more intense over time and all brackets underwent color alterations when immersed in the aforementioned solutions. PMID:26352842

Color stability of ceramic brackets immersed in potentially staining solutions.

PubMed

Guignone, Bruna Coser; Silva, Ludimila Karsbergen; Soares, Rodrigo Villamarim; Akaki, Emilio; Goiato, Marcelo Coelho; Pithon, Matheus Melo; Oliveira, Dauro Douglas

2015-01-01

To assess the color stability of five types of ceramic brackets after immersion in potentially staining solutions. Ninety brackets were divided into 5 groups (n = 18) according to brackets commercial brands and the solutions in which they were immersed (coffee, red wine, coke and artificial saliva). The brackets assessed were Transcend (3M/Unitek, Monrovia, CA, USA), Radiance (American Orthodontics, Sheboygan, WI, USA), Mystique (GAC International Inc., Bohemia, NY, USA) and Luxi II (Rocky Mountain Orthodontics, Denver, CO, USA). Chromatic changes were analyzed with the aid of a reflectance spectrophotometer and by visual inspection at five specific time intervals. Assessment periods were as received from the manufacturer (T0), 24 hours (T1), 72 hours (T2), as well as 7 days (T3) and 14 days (T4) of immersion in the aforementioned solutions. Results were submitted to statistical analysis with ANOVA and Bonferroni correction, as well as to a multivariate profile analysis for independent and paired samples with significance level set at 5%. The duration of the immersion period influenced color alteration of all tested brackets, even though these changes could not always be visually observed. Different behaviors were observed for each immersion solution; however, brackets immersed in one solution progressed similarly despite minor variations. Staining became more intense over time and all brackets underwent color alterations when immersed in the aforementioned solutions.

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

NASA Astrophysics Data System (ADS)

Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

2016-04-01

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

Effect of eliminating the residual fluoride gel on titanium bracket corrosion.

PubMed

Khoury, Elie S; Abboud, Maher; Bassil-Nassif, Nayla; Bouserhal, Joseph

2011-09-01

Fluoride ions, in long-term applications on titanium brackets, cause their corrosion. Fluoride gel used for caries prevention during orthodontic treatment has a very high concentration in fluoride ions, and therefore has the potential for causing bracket corrosion. The main aim of this study was to determine the effect of eliminating the residual fluoride gel, by rinsing it, on the corrosion of titanium brackets. The secondary aim was to evaluate the corrosion of titanium brackets in the presence of fluoride gel. One hundred titanium brackets were divided into five groups of 20 brackets each. Group 1 being the control group, the rest of the groups were immersed in fluoride gel: Group 2 for 4 minutes and kept for 30 minutes with the residual fluoride gel on; Group 3 for 4 minutes followed by immediate water rinsing; Group 4 for 12 minutes and kept for 90 minutes with the residual fluoride gel on and Group 5 for 12 minutes followed by immediate water rinsing. All groups were rinsed then dried, for 20 hours, using Silica gel in a desiccator maintained at 37°C before testing. Gravimetrical results and SEM analysis showed no significant difference between Groups 2, 3 and 5 compared to each other and to the control group. Only Group 4 showed significant weight loss and pitting corrosion in four of the 20 brackets. In sliding resistance, no significant difference was detected between any of the groups. Short time applications of fluoride gel do not affect sliding resistance of titanium brackets. No titanium corrosion was detected for one application of concentrated fluoride gel and some brackets showed pitting corrosion for three applications. The rinsing of residual fluoride gel eliminates completely the risk of bracket corrosion. Copyright © 2011 CEO. Published by Elsevier Masson SAS. All rights reserved.

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance–voltage (C–V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C–V curves even after post deposition annealing at 800 °C. Besides, we found that the current density–oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case.

Does the design of self-ligating brackets show different behavior in terms of friction?

PubMed

Tecco, Simona; Marzo, Giuseppe; Di Bisceglie, Beatrice; Crincoli, Vito; Tetè, Stefano; Festa, Felice

2011-01-01

This in vitro study evaluated the friction generated by aligned stainless steel conventional brackets, self-ligating Damon MX brackets, Time3 brackets, Vision LP brackets, and low-friction Slide ligatures coupled with various stainless steel, nickel-titanium (Ni-Ti), and beta-titanium (TMA) archwires. All brackets had a 0.022-inch slot; the orthodontic archwires were 0.014-inch Ni-Ti, 0.016-inch Ni-Ti, 0.014 x 0.025-inch Ni-Ti, 0.018 x 0.025-inch Ni-Ti, 0.017 x 0.025-inch TMA, 0.019 x 0.025-inch stainless steel, and 0.019 x 0.025-inch Ni-Ti. Each bracket-archwire combination was tested 10 times. Coupled with 0.014-inch Ni-Ti and 0.016-inch Ni-Ti archwire, conventional brackets generated the greatest friction, while Damon MX and Vision LP brackets generated the lowest (P < .05). No significant difference was observed between Time3 brackets and Slide ligatures. Coupled with all the rectangular archwires, Victory Series brackets, Slide ligatures, and Vision LP self-ligating brackets generated significantly lower friction than Time3 and Damon MX self-ligating brackets (P < .05). These findings suggest that self-ligating brackets are a great family of brackets that, in vitro, can generate different levels of friction when coupled with thin, thick, rectangular, or round archwires. Clinical conclusions based on our results are not possible, due to the limitations of the experimental conditions.

Optical band gap of thermally deposited Ge-S-Ga thin films

NASA Astrophysics Data System (ADS)

Rana, Anjli; Heera, Pawan; Singh, Bhanu Pratap; Sharma, Raman

2018-05-01

Thin films of Ge20S80-xGax glassy alloy, obtained from melt quenching technique, were deposited on the glass substrate by thermal evaporation technique under a high vacuum conditions (˜ 10-5 Torr). Absorption spectrum fitting method (ASF) is employed to obtain the optical band gap from absorption spectra. This method requires only the measurement of the absorption spectrum of the sample. The width of the band tail was also determined. Optical band gap computed from absorption spectra is found to decrease with an increase in Ga content. The evaluated optical band gap (Eg) is in well agreement with the theoretically predicted Eg and obtained from transmission spectra.

MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%

NASA Astrophysics Data System (ADS)

Nattermann, L.; Beyer, A.; Ludewig, P.; Hepp, T.; Sterzer, E.; Volz, K.

2017-04-01

Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers for telecommunications as well as sensing applications. In the last several years a growing body of literature has emerged, particularly on the growth of Ga(AsBi). However, the metal organic vapor phase epitaxy growth of Ga(AsBi) with high amounts of Bi, which are necessary to overcome Auger recombination and reach telecommunications wavelengths, still remains a challenge. Ga(PBi) could be a promising alternative, but has not been deposited with significant amounts of Bi so far. A second argument for Ga(PBi) is that it could be grown on GaP, which was already deposited on Si. A number of researchers have reported theoretical calculations on the band structure of Ga(PBi), but experimental results are still lacking. In this work we present the first Ga(PBi) structures, grown by metal organic vapor phase epitaxy on GaP and on GaP on Si. By careful characterization with high resolution X-ray diffraction, atomic force microscopy, secondary ion mass spectrometry and scanning transmission electron microscopy, we will show that we have realized high quality Ga(PBi) with Bi fractions over 8%.

Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hu, Haiyang; Wang, Jun; Cheng, Zhuo; Yang, Zeyuan; Yin, Haiying; Fan, Yibing; Ma, Xing; Huang, Yongqing; Ren, Xiaomin

2018-04-01

In this work, a technique for the growth of GaAs epilayers on Si, combining an ultrathin amorphous Si buffer layer and a three-step growth method, has been developed to achieve high crystalline quality for monolithic integration. The influences of the combined technique for the crystalline quality of GaAs on Si are researched in this article. The crystalline quality of GaAs epilayer on Si with the combined technique is investigated by scanning electron microscopy, double crystal X-ray diffraction (DCXRD), photoluminescence, and transmission electron microscopy measurements. By means of this technique, a 1.8-µm-thick high-quality GaAs/Si epilayer was grown by metal-organic chemical vapor deposition. The full-width at half-maximum of the DCXRD rocking curve in the (400) reflection obtained from the GaAs/Si epilayers is about 163 arcsec. Compared with only using three-step growth method, the current technique reduces etch pit density from 3 × 106 cm-2 to 1.5 × 105 cm-2. The results demonstrate that the combined technique is an effective approach for reducing dislocation density in GaAs epilayers on Si.

Titanium orthodontic brackets: structure, composition, hardness and ionic release.

PubMed

Gioka, Christiana; Bourauel, Christoph; Zinelis, Spiros; Eliades, Theodore; Silikas, Nikolaos; Eliades, George

2004-09-01

The aim of the present study was to investigate the composition, morphology, bulk structure and ionic release of two brands of titanium orthodontic brackets: Orthos2 (Ormco, USA) and Rematitan (Dentaurum, Germany). Five specimens of each group were examined with computerized X-ray microtomography, to reveal the morphology and structure of brackets, whilst resin-embedded and metallographically polished specimens were subjected to SEM/EDS analysis and Vickers microhardness measurements. Brackets were also maintained in 0.9% saline for 2 months and the ionic release in the immersion medium was determined with Inductively Coupled Plasma Atomic Emission Spectroscopy. The results of the hardness and ionic release measurements were statistically analyzed with two-way ANOVA and Tukey's test (alpha = 0.05). Orthos2 brackets consisted of two parts, the base (commercially pure Ti grade II) and the wing (Ti-6Al-4V alloy), joined together by laser welding, producing large gaps along the base-wing interface. The base was of lower hardness (Hv = 145), than the wing (Hv = 392) and incorporated a standard foil base-mesh pad. Rematitan brackets consisted of commercially pure Ti grade IV, with a single-piece manufacturing pattern of virtually identical hardness (p > 0.05) at the base and wings, featuring a laser-etched base-mesh pad. The hardness of the Rematitan brackets was significantly lower than the hardness of the Orthos2 wings, but double the hardness of the Orthos2 base. Released Ti levels were below the threshold level (1 ng/ml) of analysis for both materials, whilst traces of Al (3 ppm) and V (2 ppm) were found in the immersion media for Ti-6Al-4V alloy. The structural and hardness differences found may influence the torque transfer characteristics from activated archwires to the brackets and the crevice corrosion potential at the base-wing interface (Orthos2). The detection of Al and V in the immersion medium (Orthos2) may imply a different biological response from the two

Role of lubricants on friction between self-ligating brackets and archwires.

PubMed

Leal, Renata C; Amaral, Flávia L B; França, Fabiana M G; Basting, Roberta T; Turssi, Cecilia P

2014-11-01

To evaluate the effect of different lubricants on friction between orthodontic brackets and archwires. Active (Quick, Forestadent) and passive (Damon 3MX, Ormco) self-ligating brackets underwent friction tests in the presence of mucin- and carboxymethylcellulose (CMC)-based artificial saliva, distilled water, and whole human saliva (positive control). Dry friction (no lubricant) was used as the negative control. Bracket/wire samples (0.014 × 0.025 inch, CuNiTi, SDS Ormco) underwent friction tests eight times in a universal testing machine. Two-way analysis of variance showed no significant interaction between bracket type and lubricant (P  =  .324). Friction force obtained with passive self-ligating brackets was lower than that for active brackets (P < .001). Friction observed in the presence of artificial saliva did not differ from that generated under lubrication with natural human saliva, as shown by Tukey test. Higher friction forces were found with the use of distilled water or when the test was performed under dry condition (ie, with no lubricant). Lubrication plays a role in friction forces between self-ligating brackets and CuNiTi wires, with mucin- and CMC-based artificial saliva providing a reliable alternative to human natural saliva.

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liang, Hongwei; Shen, Rensheng; Wang, Dongsheng; Tao, Pengcheng; Liu, Yang; Xia, Xiaochuan; Luo, Yingmin; Du, Guotong

2014-02-01

Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrödinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of ˜9 with a peak current of 22.4 mA (˜current density of 11.4 A/cm2). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect.

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

NASA Astrophysics Data System (ADS)

Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

2015-04-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

Friction between various self-ligating brackets and archwire couples during sliding mechanics.

PubMed

Stefanos, Sennay; Secchi, Antonino G; Coby, Guy; Tanna, Nipul; Mante, Francis K

2010-10-01

The aim of this study was to evaluate the frictional resistance between active and passive self-ligating brackets and 0.019 × 0.025-in stainless steel archwire during sliding mechanics by using an orthodontic sliding simulation device. Maxillary right first premolar active self-ligating brackets In-Ovation R, In-Ovation C (both, GAC International, Bohemia, NY), and SPEED (Strite Industries, Cambridge, Ontario, Canada), and passive self-ligating brackets SmartClip (3M Unitek, Monrovia, Calif), Synergy R (Rocky Mountain Orthodontics, Denver, Colo), and Damon 3mx (Ormco, Orange, Calif) with 0.022-in slots were used. Frictional force was measured by using an orthodontic sliding simulation device attached to a universal testing machine. Each bracket-archwire combination was tested 30 times at 0° angulation relative to the sliding direction. Statistical comparisons were performed with 1-way analysis of variance (ANOVA) followed by Dunn multiple comparisons. The level of statistical significance was set at P <0.05. The Damon 3mx brackets had significantly the lowest mean static frictional force (8.6 g). The highest mean static frictional force was shown by the SPEED brackets (83.1 g). The other brackets were ranked as follows, from highest to lowest, In-Ovation R, In-Ovation C, SmartClip, and Synergy R. The mean static frictional forces were all statistically different. The ranking of the kinetic frictional forces of bracket-archwire combinations was the same as that for static frictional forces. All bracket-archwire combinations showed significantly different kinetic frictional forces except SmartClip and In-Ovation C, which were not significantly different from each other. Passive self-ligating brackets have lower static and kinetic frictional resistance than do active self-ligating brackets with 0.019 × 0.025-in stainless steel wire. Copyright © 2010 American Association of Orthodontists. Published by Mosby, Inc. All rights reserved.

Spectrophotometric evaluation of dental bleaching under orthodontic bracket in enamel and dentin

PubMed Central

Correr, Americo-Bortolazzo; Rastelli, Alessandra-Nara-Souza; Lima, Débora-Alves-Nunes-Leite; Consani, Rafael-Leonardo-Xediek

2014-01-01

Aware of the diffusion capacity of bleaching in the dental tissues, many orthodontists are subjecting their patients to dental bleaching during orthodontic treatment for esthetic purposes or to anticipate the exchange of esthetic restorations after the orthodontic treatment. For this purpose specific products have been developed in pre-loaded whitening trays designed to fit over and around brackets and wires, with clinical efficacy proven. Objective: The objective of this study was to evaluate, through spectrophotometric reflectance, the effectiveness of dental bleaching under orthodontic bracket. Material and Methods: Thirty-two bovine incisors crown blocks of 8 mm x 8 mm height lengths were used. Staining of tooth blocks with black tea was performed for six days. They were distributed randomly into 4 groups (1-home bleaching with bracket, 2- home bleaching without bracket, 3- office bleaching with bracket, 4 office bleaching without bracket). The color evaluation was performed (CIE L * a * b *) using color reflectance spectrophotometer. Metal brackets were bonded in groups 1 and 3. The groups 1 and 2 samples were subjected to the carbamide peroxide at 15%, 4 hours daily for 21 days. Groups 3 and 4 were subjected to 3 in-office bleaching treatment sessions, hydrogen peroxide 38%. After removal of the brackets, the second color evaluation was performed in tooth block, difference between the area under the bracket and around it, and after 7 days to verified color stability. Data analysis was performed using the paired t-test and two-way variance analysis and Tukey’s. Results: The home bleaching technique proved to be more effective compared to the office bleaching. There was a significant difference between the margin and center color values of the specimens that were subjected to bracket bonding. Conclusions: The bracket bond presence affected the effectiveness of both the home and office bleaching treatments. Key words:Tooth bleaching, spectrophotometry

Analysis and characterization of Cu2CdSnS4 quaternary alloy nanostructures deposited on GaN

NASA Astrophysics Data System (ADS)

Odeh, Ali Abu; Al-Douri, Y.; Ameri, M.; Bouhemadou, A.

2018-06-01

Through using spin coating technique, Cu2CdSnS4 (CCTS) quaternary alloy nanostructures were successfully deposited on GaN substrate using a wide range of spin coating speeds; 1500, 2000, 2500, 3000 and 3500 RPM at annealing temperature 300 °C. The optical properties were investigated through UV-vis which revealed the changing of energy band gap as the spin coating speed increases, in addition, to verify specific models of refractive index and optical dielectric constant. The structural properties were studied by X-ray diffraction which indicated that the number and intensity of the peaks were changed as the spin coating speed changes. The morphological and topographical studies of CCTS were elaborated by field emission-scanning electron microscopy and atomic force microscopy. The obtained results suggest that CCTS nanostructures deposited on GaN substrate are very suitable for optoelectronic applications, that are in accordance with the available theoretical and experimental data.

Effects of recycling and bonding agent application on bond strength of stainless steel orthodontic brackets.

PubMed

Bahnasi, Faisal I; Abd-Rahman, Aida Na; Abu-Hassan, Mohame I

2013-10-01

1) to assess different methods of recycling orthodontic brackets, 2) to evaluate Shear Bond Strength (SBS) of (a) new, (b) recycled and (c) repeated recycled stainless steel brackets (i) with and (ii) without bracket base primer. A total of 180 extracted human premolar teeth and 180 premolar stainless steel brackets were used. One hundred teeth and 100 brackets were divided into five groups of 20-teeth each. Four methods of recycling orthodontic brackets were used in each of the first four groups while the last one (group V) was used as the control. Groups (I-V) were subjected to shear force within half an hour until the brackets debond. SBS was measured and the method showing the highest SBS was selected. A New group (VI) was recycled twice with the selected method. Six subgroups (1-6) were established; the primer was applied for three sub-groups, and the composite was applied for all brackets. Brackets were subjected to the same shear force, and SBS was measured for all sub-groups. There was a significant difference between the mean SBS of the sandblasting method and the means of SBS of each of the other three methods. There was however, no significant difference between the mean SBS of the new bracket and the mean SBS of recycled bracket using sandblasting. The mean SBS of all sub-groups were more than that recommended by Reynolds (17) in 1975. Brackets with primer showed slightly higher SBS compared to those of brackets without bonding agent. To decrease cost, sandblasted recycled orthodontic brackets can be used as an alternative to new brackets. It is recommended to apply a bonding agent on the bracket base to provide greater bond strength. Key words:Recycled bracket, shear bond strength, sandblasting, stainless steel orthodontic bracket.

Effects of recycling and bonding agent application on bond strength of stainless steel orthodontic brackets

PubMed Central

Bahnasi, Faisal I.; Abu-Hassan, Mohame I.

2013-01-01

Objectives: 1) to assess different methods of recycling orthodontic brackets, 2) to evaluate Shear Bond Strength (SBS) of (a) new, (b) recycled and (c) repeated recycled stainless steel brackets (i) with and (ii) without bracket base primer. Study Design: A total of 180 extracted human premolar teeth and 180 premolar stainless steel brackets were used. One hundred teeth and 100 brackets were divided into five groups of 20-teeth each. Four methods of recycling orthodontic brackets were used in each of the first four groups while the last one (group V) was used as the control. Groups (I-V) were subjected to shear force within half an hour until the brackets debond. SBS was measured and the method showing the highest SBS was selected. A New group (VI) was recycled twice with the selected method. Six subgroups (1-6) were established; the primer was applied for three sub-groups, and the composite was applied for all brackets. Brackets were subjected to the same shear force, and SBS was measured for all sub-groups. Results: There was a significant difference between the mean SBS of the sandblasting method and the means of SBS of each of the other three methods. There was however, no significant difference between the mean SBS of the new bracket and the mean SBS of recycled bracket using sandblasting. The mean SBS of all sub-groups were more than that recommended by Reynolds (17) in 1975. Brackets with primer showed slightly higher SBS compared to those of brackets without bonding agent. Conclusion: To decrease cost, sandblasted recycled orthodontic brackets can be used as an alternative to new brackets. It is recommended to apply a bonding agent on the bracket base to provide greater bond strength. Key words:Recycled bracket, shear bond strength, sandblasting, stainless steel orthodontic bracket. PMID:24455081

[Comparison of root resorption between self-ligating and conventional brackets using cone-beam CT].

PubMed

Liu, Yun; Guo, Hong-ming

2016-04-01

To analyze the differences of root resorption between passive self-ligating and conventional brackets, and to determine the relationship between passive self-ligating brackets and root resorption. Fifty patients were randomly divided into 2 groups using passive self-ligating brackets or conventional straight wire brackets (0.022 system), respectively. Cone-beam CT was taken before and after treatment. The amount of external apical root resorption of maxillary incisors was measured on CBCT images. Student's t test was performed to analyze the differences of root apical resorption between the 2 groups with SPSS17.0 software package. No significant difference(P> 0.05) in root resorption of maxillary incisors was found between passive self-ligating brackets and conventional brackets. Passive self-ligating brackets and conventional brackets can cause root resorption, but the difference was not significant. Passive self-ligating brackets do not induce more root resorption.

Synthesis and characterization of beta-Ga2O3 nanorod array clumps by chemical vapor deposition.

PubMed

Shi, Feng; Wei, Xiaofeng

2012-11-01

beta-Ga2O3 nanorod array clumps were successfully synthesized on Si (111) substrates by chemical vapor deposition. The composition, microstructure, morphology, and light-emitting property of these clumps were characterized by X-ray diffraction, Fourier transform infrared spectrophotometry, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. The results demonstrate that the sample synthesized at 1050 degrees C for 15 min was composed of monoclinic beta-Ga2O3 nanorod array clumps, where each single nanorod was about 300 nm in diameter with some nano-droplets on its tip. These results reveal that the growth mechanism agrees with the vapor-liquid-solid (VLS) process. The photoluminescence spectrum shows that the Ga2O3 nanorods have a blue emission at 438 nm, which may be attributed to defects, such as oxygen vacancies and gallium-oxygen vacancy pairs. Defect-energy aggregation confinement growth theory was proposed to explain the growth mechanism of Ga2O3 nanorod array clumps collaborated with the VLS mechanism.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Thermal debonding of ceramic brackets: an in vitro study.

PubMed

Crooks, M; Hood, J; Harkness, M

1997-02-01

Thermal debonding has been developed to overcome the problems of enamel damage and high forces when debonding ceramic orthodontic brackets. However, the temperature changes with thermal debonding have the potential to damage the tooth tissues. The principal aims of this study are, first, to investigate the effects of resin type, resin thickness, and debonding force on the temperature changes in human premolars during thermal debonding of ceramic brackets and, second, to record the sites of bond failure and damage to the tooth surface. Ceramic brackets were attached to each specimen by using one of four types of bonding resin in a controlled thick or thin resin layer. The ceramic debonding unit (Dentaurum, Pforzheim, Germany) was used to thermally debond the brackets with either a 40 or 80 Nmm torsional force. Higher temperature changes at the pulpal wall (> 10 degrees C in some 40 Nmm torsional force specimens) always occurred with Concise (3M Dental Products, St. Paul, Minn.) and Transbond (Unitek/3M Dental Products, Monrovia, Calif.) resins, and lower temperature changes (< 5 degrees C) with Quasar (Rocky Mountain Orthodontics, Denver, Colo.) and Ortho. B.S. (Dentaurum, Pforzheim, Germany) resins. In general, resin thickness was not significantly associated with buccal surface or pulpal wall temperature changes. However, temperature changes at the pulpal wall were significantly associated with the temperature changes at the buccal surface (r = 0.76), with the temperature of the thermal debonder blade for thin resin layer specimens (r = 0.50), and the time required to debond the bracket for both thick (r = 0.74) and thin (r = 0.63) resin layer specimens. In most specimens, the site of bond failure occurred at the bracket-resin interface. There was no evidence of enamel damage after bracket removal.

Compilation of gallium resource data for bauxite deposits

USGS Publications Warehouse

Schulte, Ruth F.; Foley, Nora K.

2014-01-01

Gallium (Ga) concentrations for bauxite deposits worldwide have been compiled from the literature to provide a basis for research regarding the occurrence and distribution of Ga worldwide, as well as between types of bauxite deposits. In addition, this report is an attempt to bring together reported Ga concentration data into one database to supplement ongoing U.S. Geological Survey studies of critical mineral resources. The compilation of Ga data consists of location, deposit size, bauxite type and host rock, development status, major oxide data, trace element (Ga) data and analytical method(s) used to derive the data, and tonnage values for deposits within bauxite provinces and districts worldwide. The range in Ga concentrations for bauxite deposits worldwide is

Therapeutic efficacy of self-ligating brackets: A systematic review.

PubMed

Dehbi, Hasnaa; Azaroual, Mohamed Faouzi; Zaoui, Fatima; Halimi, Abdelali; Benyahia, Hicham

2017-09-01

Over the last few years, the use of self-ligating brackets in orthodontics has progressed considerably. These systems have been the subject of numerous studies with good levels of evidence making it possible to evaluate their efficacy and efficiency compared to conventional brackets. The aim of this study was to evaluate the therapeutic efficacy of self-ligating brackets by means of a systematic review of the scientific literature. A systematic study was undertaken in the form of a recent search of the electronic Pubmed database, oriented by the use of several keywords combined by Boolean operators relating to the therapeutic efficacy of self-ligating brackets through the study of tooth alignment, space closure, expansion, treatment duration and degree of discomfort. The search was limited to randomized controlled studies, and two independent readers identified studies corresponding to the selection criteria. The chosen articles comprised 20 randomized controlled trials. The studies analyzed revealed the absence of significant differences between the two types of system on the basis of the clinical criteria adopted, thereby refuting the hypothesis of the superiority of self-ligating brackets over conventional systems. Copyright © 2017 CEO. Published by Elsevier Masson SAS. All rights reserved.

Adhesion of periodontal pathogens to self-ligating orthodontic brackets: An in-vivo prospective study.

PubMed

Jung, Woo-Sun; Kim, Kyungsun; Cho, Soha; Ahn, Sug-Joon

2016-09-01

Our aims were to analyze adhesion of periodontopathogens to self-ligating brackets (Clarity-SL [CSL], Clippy-C [CC] and Damon Q [DQ]) and to identify the relationships between bacterial adhesion and oral hygiene indexes. Central incisor brackets from the maxilla and mandible were collected from 60 patients at debonding after the plaque and gingival indexes were measured. Adhesions of Aggregatibacter actinomycetemcomitans (Aa), Porphyromonas gingivalis (Pg), Prevotella intermedia (Pi), Fusobacterium nucleatum (Fn), and Tannerella forsythia (Tf) were quantitatively determined using real-time polymerase chain reactions. Factorial analysis of variance was used to analyze bacterial adhesion in relation to bracket type and jaw position. Correlation coefficients were calculated to determine the relationships between bacterial adhesion and the oral hygiene indexes. Total bacteria showed greater adhesion to CSL than to DQ brackets, whereas Aa, Pg, and Pi adhered more to DQ than to CSL brackets. CC brackets showed an intermediate adhesion pattern between CSL and DQ brackets, but it did not differ significantly from either bracket type. Adhesion of Fn and Tf did not differ significantly among the 3 brackets. Most bacteria were detected in greater quantities in the mandibular than in the maxillary brackets. The plaque and gingival indexes were not strongly correlated with bacterial adhesion to the brackets. Because Aa, Pg, and Pi adhered more to the DQ brackets in the mandibular area, orthodontic patients with periodontal problems should be carefully monitored in the mandibular incisors where the distance between the bracket and the gingiva is small, especially when DQ brackets are used. Copyright © 2016 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

PubMed

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Study of force loss due to friction comparing two ceramic brackets during sliding tooth movement.

PubMed

AlSubaie, Mai; Talic, Nabeel; Khawatmi, Said; Alobeid, Ahmad; Bourauel, Christoph; El-Bialy, Tarek

2016-09-01

To compare the percentage of force loss generated during canine sliding movements in newly introduced ceramic brackets with metal brackets. Two types of ceramic brackets, namely polycrystalline alumina (PCA) ceramic brackets (Clarity Advanced) and monocrystalline alumina (MCA) ceramic brackets (Inspire Ice) were compared with stainless steel (SS) brackets (Victory Series). All bracket groups (n = 5 each) were for the maxillary canines and had a 0.018-inch slot size. The brackets were mounted on an Orthodontic Measurement and Simulation System (OMSS) to simulate the canine retraction movement into the first premolar extraction space. Using elastic ligatures, 0.016 × 0.022″ (0.40 × 0.56 mm) stainless steel archwires were ligated onto the brackets. Retraction force was applied via a nickel-titanium coil spring with a nearly constant force of approximately 1 N. The OMSS measured the percentage of force loss over the retraction path by referring to the difference between the applied retraction force and actual force acting on each bracket. Between group comparisons were done with one-way analysis of variance. The metal brackets revealed the lowest percentage of force loss due to friction, followed by the PCA and MCA ceramic bracket groups (67 ± 4, 68 ± 7, and 76 ± 3 %, respectively). There was no significant difference between SS and PCA brackets (p = 0.97), but we did observe significant differences between metal and MCA brackets (p = 0.03) and between PCA and MCA ceramic brackets (p = 0.04). PCA ceramic brackets, whose slot surface is covered with an yttria-stabilized zirconia-based coating exhibited frictional properties similar to those of metal brackets. Frictional resistance resulted in an over 60 % loss of the applied force due to the use of elastic ligatures.

On covariant Poisson brackets in classical field theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forger, Michael; Salles, Mário O.; Centro de Ciências Exatas e da Terra, Universidade Federal do Rio Grande do Norte, Campus Universitário – Lagoa Nova, BR–59078-970 Natal, RN

2015-10-15

How to give a natural geometric definition of a covariant Poisson bracket in classical field theory has for a long time been an open problem—as testified by the extensive literature on “multisymplectic Poisson brackets,” together with the fact that all these proposals suffer from serious defects. On the other hand, the functional approach does provide a good candidate which has come to be known as the Peierls–De Witt bracket and whose construction in a geometrical setting is now well understood. Here, we show how the basic “multisymplectic Poisson bracket” already proposed in the 1970s can be derived from the Peierls–De Witt bracket,more » applied to a special class of functionals. This relation allows to trace back most (if not all) of the problems encountered in the past to ambiguities (the relation between differential forms on multiphase space and the functionals they define is not one-to-one) and also to the fact that this class of functionals does not form a Poisson subalgebra.« less

In vitro physical, chemical, and biological evaluation of commercially available metal orthodontic brackets.

PubMed

Kim, Joo Hyoung; Cha, Jung Yul; Hwang, Chung Ju

2012-12-01

This in vitro study was undertaken to evaluate the physical, chemical, and biological properties of commercially available metal orthodontic brackets in South Korea, because national standards for these products are lacking. FOUR BRACKET BRANDS WERE TESTED FOR DIMENSIONAL ACCURACY, (MANUFACTURING ERRORS IN ANGULATION AND TORQUE), CYTOTOXICITY, COMPOSITION, ELUTION, AND CORROSION: Archist (Daeseung Medical), Victory (3M Unitek), Kosaka (Tomy), and Confidence (Shinye Odontology Materials). The tested rackets showed no significant differences in manufacturing errors in angulation, but Confidence brackets showed a significant difference in manufacturing errors in torque. None of the brackets were cytotoxic to mouse fibroblasts. The metal ion components did not show a regular increasing or decreasing trend of elution over time, but the volume of the total eluted metal ions increased: Archist brackets had the maximal Cr elution and Confidence brackets appeared to have the largest volume of total eluted metal ions because of excessive Ni elution. Confidence brackets showed the lowest corrosion resistance during potentiodynamic polarization. The results of this study could potentially be applied in establishing national standards for metal orthodontic brackets and in evaluating commercially available products.

Influence of Preadjusted Bracket Shape and Positioning Reference on Angulation of Upper Central Incisor.

PubMed

Topolski, Francielle; de O Accorsi, Mauricio A; Trevisi, Hugo J; Cuoghi, Osmar A; Moresca, Ricardo

2016-10-01

To verify the influence of different bracket shapes and placement references according to Andrews and MBT systems on the expression of angulation in upper central incisors (UCI). Bracket positioning and mesiodistal dental movement simulations were performed and the angulations produced in the dental crown were evaluated, based on computed tomography scan images of 30 UCI and AutoCAD software analysis. Rectangular (Andrews) and rhomboid (MBT) brackets were placed according to the references recommended by Andrews and MBT systems - long axis of the clinical crown (LACC) and incisal edge (IE) respectively. Data showed that the use of LACC as reference for bracket positioning produced 5° and 4° UCI angulations in Andrews and MBT brackets respectively. The use of IE produced a 1.2° mean angulation in UCI for both brackets. When the LACC was used as reference for bracket positioning, the UCI crown angulation corresponded to the angulation built into the brackets, regardless of shape, while the use of IE resulted in natural crown angulation, regardless of bracket shape. This research contributes to guide the orthodontist in relation to the different treatment techniques based on the use of preadjusted brackets.

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Friction behavior of ceramic injection-molded (CIM) brackets.

PubMed

Reimann, Susanne; Bourauel, Christoph; Weber, Anna; Dirk, Cornelius; Lietz, Thomas

2016-07-01

Bracket material, bracket design, archwire material, and ligature type are critical modifiers of friction behavior during archwire-guided movement of teeth. We designed this in vitro study to compare the friction losses of ceramic injection-molded (CIM) versus pressed-ceramic (PC) and metal injection-molded (MIM) brackets-used with different ligatures and archwires-during archwire-guided retraction of a canine. Nine bracket systems were compared, including five CIM (Clarity™ and Clarity™ ADVANCED, both by 3M Unitek; discovery(®) pearl by Dentaurum; Glam by Forestadent; InVu by TP Orthodontics), two PC (Inspire Ice by Ormco; Mystique by DENTSPLY GAC), and two MIM (discovery(®) and discovery(®) smart, both by Dentaurum) systems. All of these were combined with archwires made of either stainless steel or fiberglass-reinforced resin (remanium(®) ideal arch or Translucent pearl ideal arch, both by Dentaurum) and with elastic ligatures or uncoated or coated stainless steel (all by Dentaurum). Archwire-guided retraction of a canine was simulated with a force of 0.5 N in the orthodontic measurement and simulation system (OMSS). Friction loss was determined by subtracting the effective orthodontic forces from the applied forces. Based on five repeated measurements performed on five brackets each, weighted means were calculated and evaluated by analysis of variance and a Bonferroni post hoc test with a significance level of 0.05. Friction losses were significantly (p < 0.05) higher (58-79 versus 20-30 %) for the combinations involving the steel versus the resin archwire in conjunction with the elastic ligature. The uncoated steel ligatures were associated with the lowest friction losses with Clarity™ (13 %) and discovery(®) pearl (16 %) on the resin archwire and the highest friction losses with Clarity™ ADVANCED (53 %) and Mystique (63 %) on the steel archwire. The coated steel ligatures were associated with friction losses similar to the uncoated steel

Torsional strength of computer-aided design/computer-aided manufacturing-fabricated esthetic orthodontic brackets.

PubMed

Alrejaye, Najla; Pober, Richard; Giordano Ii, Russell

2017-01-01

To fabricate orthodontic brackets from esthetic materials and determine their fracture resistance during archwire torsion. Computer-aided design/computer-aided manufacturing technology (Cerec inLab, Sirona) was used to mill brackets with a 0.018 × 0.025-inch slot. Materials used were Paradigm MZ100 and Lava Ultimate resin composite (3M ESPE), Mark II feldspathic porcelain (Vita Zahnfabrik), and In-Ceram YZ zirconia (Vita Zahnfabrik). Ten brackets of each material were subjected to torque by a 0.018 × 0.025-inch stainless steel archwire (G&H) using a specially designed apparatus. The average moments and degrees of torsion necessary to fracture the brackets were determined and compared with those of commercially available alumina brackets, Mystique MB (Dentsply GAC). The YZ brackets were statistically significantly stronger than any other tested material in their resistance to torsion (P < .05). The mean torques at failure ranged from 3467 g.mm for Mark II to 11,902 g.mm for YZ. The mean torsion angles at failure ranged from 15.3° to 40.9°. Zirconia had the highest torsional strength among the tested esthetic brackets. Resistance of MZ100 and Lava Ultimate composite resin brackets to archwire torsion was comparable to commercially available alumina ceramic brackets.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Debris and friction of self-ligating and conventional orthodontic brackets after clinical use.

PubMed

Araújo, Raíssa Costa; Bichara, Lívia Monteiro; Araujo, Adriana Monteiro de; Normando, David

2015-07-01

To compare the degree of debris and friction of conventional and self-ligating orthodontic brackets before and after clinical use. Two sets of three conventional and self-ligating brackets were bonded from the first molar to the first premolar in eight individuals, for a total of 16 sets per type of brackets. A passive segment of 0.019 × 0.025-inch stainless steel archwire was inserted into each group of brackets. Frictional force and debris level were evaluated as received and after 8 weeks of intraoral exposure. Two-way analysis of variance and Wilcoxon signed-rank test were applied at P < .05. After the intraoral exposure, there was a significant increase of debris accumulation in both systems of brackets (P < .05). However, the self-ligating brackets showed a higher amount of debris compared with the conventional brackets. The frictional force in conventional brackets was significantly higher when compared with self-ligating brackets before clinical use (P < .001). Clinical exposure for 8 weeks provided a significant increase of friction (P < .001) on both systems. In the self-ligating system, the mean of friction increase was 0.21 N (191%), while 0.52 N (47.2%) was observed for the conventional system. Self-ligating and conventional brackets, when exposed to the intraoral environment, showed a significant increase in frictional force during the sliding mechanics. Debris accumulation was higher for the self-ligating system.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

Distributed bragg reflector using AIGaN/GaN

DOEpatents

Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

2004-08-10

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Dimensional accuracy of ceramic self-ligating brackets and estimates of theoretical torsional play.

PubMed

Lee, Youngran; Lee, Dong-Yul; Kim, Yoon-Ji R

2016-09-01

To ascertain the dimensional accuracies of some commonly used ceramic self-ligation brackets and the amount of torsional play in various bracket-archwire combinations. Four types of 0.022-inch slot ceramic self-ligating brackets (upper right central incisor), three types of 0.018-inch ceramic self-ligating brackets (upper right central incisor), and three types of rectangular archwires (0.016 × 0.022-inch beta-titanium [TMA] (Ormco, Orange, Calif), 0.016 × 0.022-inch stainless steel [SS] (Ortho Technology, Tampa, Fla), and 0.019 × 0.025-inch SS (Ortho Technology)) were measured using a stereomicroscope to determine slot widths and wire cross-sectional dimensions. The mean acquired dimensions of the brackets and wires were applied to an equation devised by Meling to estimate torsional play angle (γ). In all bracket systems, the slot tops were significantly wider than the slot bases (P < .001), yielding a divergent slot profile. Clarity-SLs (3M Unitek, Monrovia, Calif) showed the greatest divergence among the 0.022-inch brackets, and Clippy-Cs (Tomy, Futaba, Fukushima, Japan) among the 0.018-inch brackets. The Damon Clear (Ormco) bracket had the smallest dimensional error (0.542%), whereas the 0.022-inch Empower Clear (American Orthodontics, Sheboygan, Wis) bracket had the largest (3.585%). The largest amount of theoretical play is observed using the Empower Clear (American Orthodontics) 0.022-inch bracket combined with the 0.016 × 0.022-inch TMA wire (Ormco), whereas the least amount occurs using the 0.018 Clippy-C (Tomy) combined with 0.016 × 0.022-inch SS wire (Ortho Technology).

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

NASA Astrophysics Data System (ADS)

Kim, Jun-Young; Ionescu, Adrian; Mansell, Rhodri; Farrer, Ian; Oehler, Fabrice; Kinane, Christy J.; Cooper, Joshaniel F. K.; Steinke, Nina-Juliane; Langridge, Sean; Stankiewicz, Romuald; Humphreys, Colin J.; Cowburn, Russell P.; Holmes, Stuart N.; Barnes, Crispin H. W.

2017-01-01

Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak showed a 1° full-width at half-maximum, indicating ≈20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm.

Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Choi, Byeongdae; Allabergenov, Bunyod; Lyu, Hong-Kun; Lee, Seong Eui

2018-06-01

We deposited a 300-nm-thick Ga2O3 thin film on an amorphous SiO2/Si substrate via pulsed laser deposition. X-ray diffraction patterns revealed the formation of β-Ga2O3 phase at a substrate temperature of 700 °C. X-ray photoelectron spectra indicated that the degree of oxidation increased after annealing at 700 °C. Further annealings at higher temperatures led to a transition of the β-Ga2O3 phase to the α-Ga2O3 phase; this transition was caused by the twin structure formed during the crystallinity improvement process. In addition, we discuss the mechanism of the transition from the β phase to the α phase in the β-Ga2O3 thin films.

A hetero-homogeneous investigation of chemical bath deposited Ga-doped ZnO nanorods

NASA Astrophysics Data System (ADS)

Rakhsha, Amir Hosein; Abdizadeh, Hossein; Pourshaban, Erfan; Golobostanfard, Mohammad Reza

2018-01-01

One-dimensional nanostructures of zinc oxide (ZnO) have been in the center of attention, mostly for electronic applications due to their distinctive properties such as high electron mobility (100 cm2V-1s-1) and crystallinity. Thanks to its high density of vacancies and interstitial sites, wurtzite lattice of ZnO is a suitable host for gallium (Ga) as a dopant element. Herein, ZnO nanorod arrays (NRAs) are synthesized by a low-temperature chemical bath deposition (CBD) method with various concentrations of gallium nitrate hydrate as a dopant precursor. Structural and morphological analyses confirm that optimum properties of gallium-doped ZnO (GZO) are obtained at 1% (Ga to Zn molar ratio). Owing to the replacement of smaller Ga3+ ions with Zn2+ ions in the GZO structure, a slight shift of (002) peak to higher angles could be observed in XRD pattern of GZO NRAs. The scanning electron microscope images demonstrate a proliferation in the ZnO NRAs length from 650 nm for undoped ZnO (UZO) to 1200 nm for GZO-1%. However, increasing the dopant concentration above 2.5% results in formation of homogeneous zinc gallium oxide in the bulk solution, which is a sign of inefficient process of doping in GZO NRAs. Furthermore, photoluminescence spectroscopy is used to characterize the band-gap variation of the samples, which demonstrates a small red-shift in the UV emission peak and a decrease in visible emission peak intensity with introducing Ga in ZnO lattice. Lower resistivity for GZO-1% (1.1 MΩ) sample compared to UZO (1.4 MΩ) is recorded, which is compelling evidence for the presence of Ga3+ in ZnO lattice. The results suggest that incorporating Ga into ZnO lattice using CBD method is an easy and effective technique to improve the electrical properties of ZnO NRAs that is an essential factor for a broad range of devices.

Chromium release from new stainless steel, recycled and nickel-free orthodontic brackets.

PubMed

Sfondrini, Maria Francesca; Cacciafesta, Vittorio; Maffia, Elena; Massironi, Sarah; Scribante, Andrea; Alberti, Giancarla; Biesuz, Raffaela; Klersy, Catherine

2009-03-01

To test the hypothesis that there is no difference in the amounts of chromium released from new stainless steel brackets, recycled stainless steel brackets, and nickel-free (Ni-free) orthodontic brackets. This in vitro study was performed using a classic batch procedure by immersion of the samples in artificial saliva at various acidities (pH 4.2, 6.5, and 7.6) over an extended time interval (t(1) = 0.25 h, t(2) = 1 h, t(3) = 24 h, t(4) = 48 h, t(5) = 120 h). The amount of chromium release was determined using an atomic absorption spectrophotometer and an inductively coupled plasma atomic emission spectrometer. Statistical analysis included a linear regression model for repeated measures, with calculation of Huber-White robust standard errors to account for intrabracket correlation of data. For post hoc comparisons the Bonferroni correction was applied. The greatest amount of chromium was released from new stainless steel brackets (0.52 +/- 1.083 microg/g), whereas the recycled brackets released 0.27 +/- 0.38 microg/g. The smallest release was measured with Ni-free brackets (0.21 +/- 0.51 microg/g). The difference between recycled brackets and Ni-free brackets was not statistically significant (P = .13). For all brackets, the greatest release (P = .000) was measured at pH 4.2, and a significant increase was reported between all time intervals (P < .002). The hypothesis is rejected, but the amount of chromium released in all test solutions was well below the daily dietary intake level.

In vitro assessment of competency for different lingual brackets in sliding mechanics.

PubMed

Lalithapriya, S; Kumaran, N Kurunji; Rajasigamani, K

2015-01-01

To determine the static frictional resistance of different lingual brackets at different second order angulations when coupled with stainless steel (SS) archwire in dry and wet conditions. Using a modified jig, frictional resistance was evaluated under different conditions for a total of 270 upper premolar lingual brackets (0.018″ × 0.025″ - conventional - 7(th) generation and STb, self-ligating - evolution) with no in-built tip or torque together with 0.016″ × 0.022″ straight length SS archwires. For conventional brackets, the archwire was secured with 0.008″ preformed SS short ligature ties. One way analysis of variance with Tukey HSD as post-hoc test was applied for degree wise and bracket wise comparison within dry condition and wet condition. For pair wise comparison Student's t-test was used. Under both conditions the static frictional resistance is significantly higher for self-ligating brackets at 0°, while at 5° and 10° it is higher for 7(th) generation brackets. Statistically, significant difference does not exist at 0° between conventional brackets and the same was found at 5° and 10° between STb and self-ligating brackets. With an increase in second order angulations, all the evaluated samples exhibited an increased frictional value. Wet condition samples obtained a higher value than their corresponding dry condition. The self-ligating bracket evaluated in this in vitro study is not beneficial in reducing friction during en-mass retraction due to its interactive clip type.

Is laser conditioning a valid alternative to conventional etching for aesthetic brackets?

PubMed

Sfondrini, M F; Calderoni, G; Vitale, M C; Gandini, P; Scribante, A

2018-03-01

ER:Yag lasers have been described as a more conservative alternative to conventional acid-etching enamel conditioning technique, when bonding conventional metallic orthodontic brackets. Since the use of aesthetic orthodontic brackets is constantly increasing, the purpose of the present report has been to test laser conditioning with different aesthetic brackets. Study Design: Five different aesthetic brackets (microfilled copolymer, glass fiber, sapphire, polyoxymethylene and sintered ceramic) were tested for shear bond strength and Adhesive Remnant Index scores using two different enamel conditioning techniques (acid etching and ER:Yag laser application). Two hundred bovine incisors were extracted, cleaned and embedded in resin. Specimens were then divided into 10 groups with random tables. Half of the specimens were conditioned with conventional orthophosphoric acid gel, the other half with ER:Yag laser. Different aesthetic brackets (microfilled copolymer, glass fiber, sapphire, polyoxymethylene and sintered ceramic) were then bonded to the teeth. Subsequently all groups were tested in shear mode with a Universal Testing Machine. Shear bond strength values and adhesive remnant index scores were recorded. Statistical analysis was performed. When considering conventional acid etching technique, sapphire, polyoxymethylene and sintered ceramic brackets exhibited the highest SBS values. Lowest values were reported for microfilled copolymer and glass fiber appliances. A significant decrease in SBS values after laser conditioning was reported for sapphire, polyoxymethylene and sintered ceramic brackets, whereas no significant difference was reported for microfilled copolymer and glass fiber brackets. Significant differences in ARI scores were also reported. Laser etching can significantly reduce bonding efficacy of sapphire, polyoxymethylene and sintered ceramic brackets.

An in vitro comparison of nickel and chromium release from brackets.

PubMed

Haddad, Ana Cristina Soares Santos; Tortamano, Andre; Souza, Alexandre Luís de; Oliveira, Pedro Vitoriano de

2009-01-01

This study aimed at comparing amounts of nickel (Ni) and chromium (Cr) released from brackets from different manufacturers in simulated oral environments. 280 brackets were equally divided into 7 groups according to manufacturer. 6 groups of brackets were stainless steel, and 1 group of brackets was made of a cobalt-chromium alloy with low Ni content (0.5%). International standard ISO 10271/2001 was applied to provide test methods. Each bracket was immersed in 0.5 ml of synthetic saliva (SS) or artificial plaque fluid (PF) over a period of 28 days at 37 degrees Celsius. Solutions were replaced every 7 days, and were analyzed by spectrometry. The Kruskal-Wallis test was applied. Amounts of Ni release in SS (microg L(-1) per week) varied between groups from 'bellow detection limits' to 694, and from 49 to 5,948.5 in PF. The group of brackets made of cobalt-chromium alloy, with the least nickel content, did not release the least amounts of Ni. Amounts of Cr detected in SS and in PF (microg L(-1) per week) were from 1 to 10.4 and from 50.5 to 8,225, respectively. It was therefore concluded that brackets from different manufacturers present different corrosion behavior. Further studies are necessary to determine clinical implications of the findings.

Assessing near infrared optical properties of ceramic orthodontic brackets using cross-polarization optical coherence tomography.

PubMed

Isfeld, Darren M; Aparicio, Conrado; Jones, Robert S

2014-04-01

Secondary decay (caries) under ceramic orthodontic brackets remains a significant dental problem and near infrared cross-polarization optical coherence tomography (CP-OCT) has the potential to detect underlying demineralization. The purpose of this study was to determine the effect of crystalline structure and chemical composition of ceramic brackets on CP-OCT imaging. Four ceramic brackets types, which were divided into monocrystalline and polycrystalline, were examined using CP-OCT. The results of this study demonstrated that the crystallinity of the ceramic brackets affected the 1310 nm CP-OCT imaging with the greatest attenuation seen in polycrystalline alumina brackets. The alumina polycrystalline bracket materials had significantly higher attenuation and scattering than alumina monocrystalline brackets (p < 0.05, ANOVA, Bonferroni). Additionally, bracket base morphology and composition affected NIR light attenuation. There was considerable attenuation in bracket bases that contained additive zirconium spheres (∼30 µm) and this alteration was significantly greater than the jagged alumina crystallographic alterations found in the other bracket systems (p < 0.05, ANOVA, Bonferroni). Noninvasive, near infrared (NIR) cross-polarization optical coherence tomography (CP-OCT) has potential to effectively image through portions of ceramic brackets; however, further investigation into the optical effects of resin integration in the base portion of the brackets is warranted. © 2013 Wiley Periodicals, Inc.

[Enamel damage depending on the method of bracket removal].

PubMed

Fischer-Brandies, H; Kremers, L; Reicheneder, C; Kluge, G; Hüsler, K

1993-04-01

Two different methods of removing brackets, on the one side by torsion and on the other by bending, were compared for the purpose of analyzing the respective enamel lesions. Each test group consisted of 19 extracted human molars with metal brackets attached to the molars by means of the "concise etching technique". Bracket removal was standardized through the use of a Wolpert "Universalprüfmaschine TZZ 707" with modified torsion and bending mechanism. A scanning electron microscope was used to analyze the enamel surface. When using the torsion method, the mean extension of the enamel lesions was 48.3% of the adhesive free enamel surface. These lesions often reached into the deeper enamel layers and were mainly to be found on the broad side of the bonded area. On the other hand, when using the bending method, the enamel lesions were less frequent. They were mainly superficial and were confined almost exclusively to the pressure zones. The stress required to remove the brackets and the stress distribution were calculated on mechanical models and these results corresponded well with the enamel lesions observed on the molars. It can thus be concluded that the method of removing brackets is clinically relevant in relation to enamel lesions.

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M.

2013-12-02

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on themore » inverted Ga-polar surface.« less

Coated Rectangular Composite Archwires: A Comparison Of Self-Ligating And Conventional Bracket Systems During Sliding Mechanics

NASA Astrophysics Data System (ADS)

Woods, David Keith

The purpose of this study was to analyze the resistance to sliding of coated rectangular fiber reinforced composite archwires using various brackets systems and second-order bracket angulations. Resistance to sliding was investigated for eight bracket systems: six self-ligating brackets (four passive and two passive-active) and two conventional brackets. A rectangular fiber reinforced composite archwire of 0.019 x 0.025-in dimension from BiomersRTM SimpliClear was drawn through a three-bracket model system at ten millimeters per minute for 2.5 millimeters. For each bracket, the resistance to sliding was measured at four bracket angulations (0°, 2.5°, 5°, and 10°) in a dry state at room temperature. The fiber reinforced composite archwire produced the lowest sliding resistance with the passive self-ligating bracket system (Damon DQ) at each bracket angulation tested. Overall, self-ligating bracket systems generated lower sliding resistance than conventionally ligated systems, and one passive/active self-ligating bracket system (In-Ovation-R). There was a significant increase in resistance to sliding as bracket angulation increased for all bracket systems tested. Microscopic analysis revealed increased perforation of the archwire coating material as bracket angulations were increased. Our findings show that the rectangular fiber reinforced composite archwire may be acceptable for sliding mechanics during the intermediate stages of orthodontic tooth movement, however more long-term studies are needed.

Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

PubMed

Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2017-06-07

Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

Influence of fibre and filler reinforcement of plastic brackets: an in vitro study.

PubMed

Faltermeier, Andreas; Rosentritt, Martin; Faltermeier, Rupert; Müssig, Dieter

2007-06-01

In spite of their popularity in fulfilling aesthetic requirements, plastic brackets still present some disadvantages because of their low elastic modulus, decreased fracture toughness, and reduced wear resistance. Fibre-reinforced composites are well established in dentistry and consist of a polymer matrix in which reinforcing fibres are embedded. Stress is transferred from the polymer matrix to the fibres which present a high tensile strength. Hence, the mechanical properties of polymers could be improved. The purpose of this study was to compare fracture strength, fracture toughness and flexural strength of an experimental fibre-reinforced bracket material, an SiO(2) filler-reinforced bracket and an unfilled plastic bracket material (control group). Experimental brackets and specialized bars were manufactured. Tests were performed after thermal cycling (5 degrees C/55 degrees C) the samples in an artificial oral environment of a device to simulate mastication. Statistical evaluation was undertaken. The median, 25th and 75th percentiles were calculated and a Mann-Whitney U-test was performed. In this study two findings were obvious. (1) Filler reinforcement of plastic brackets improved fracture strength and fracture toughness in comparison with the unfilled bracket material. (2) Glass fibre reinforcement of orthodontic bracket materials resulted in the greatest enhancement of the mechanical properties in comparison with the other test groups. Therefore, the application of glass fibres in plastic brackets is a successful method to enhance fracture strength.

Comparison surface characteristics and chemical composition of conventional metallic and nickel-free brackets.

PubMed

Shintcovsk, Ricardo Lima; Knop, Luegya Amorim Henriques; Gandini, Luiz Gonzaga; Martins, Lidia Parsekian; Pires, Aline Segatto

2015-01-01

This study aims at comparing conventional and nickel-free metal bracket surface characteristics with elemental composition by scanning electron microscopy (SEM), using energy dispersive spectroscopy (EDS). The sample consisted of 40 lower incisor brackets divided into four groups: ABZ = conventional brackets, Kirium Abzil 3M® (n = 10); RL = conventional brackets, Roth Light Morelli® (n = 10); NF = nickel-free brackets, Nickel-Free Morelli® (n = 10); and RM = nickel-free brackets, Roth Max Morelli® (n = 10). Qualitative evaluation of the bracket surface was performed using SEM, whereby surface features were described and compared. The elemental composition was analyzed by EDS. According to surface analysis, groups ABZ and RL showed a homogeneous surface, with better finishing, whereas the surfaces in groups NF and RM were rougher. The chemical components with the highest percentage were Fe, Cr and C. Groups NF and MR showed no nickel in their composition. In conclusion, the bracket surface of the ABZ and RL groups was more homogeneous, with grooves and pores, whereas the surfaces in groups NF and RM showed numerous flaws, cracks, pores and grooves. The chemical composition analysis confirmed that the nickel-free brackets had no Ni in their composition, as confirmed by the manufacturer's specifications, and were therefore safe to use in patients with a medical history of allergy to this metal.

Antimicrobial effect, frictional resistance, and surface roughness of stainless steel orthodontic brackets coated with nanofilms of silver and titanium oxide: a preliminary study.

PubMed

Ghasemi, Tania; Arash, Valiollah; Rabiee, Sayed Mahmood; Rajabnia, Ramazan; Pourzare, Amirhosein; Rakhshan, Vahid

2017-06-01

Nano-silver and nano-titanium oxide films can be coated over brackets in order to reduce bacterial aggregation and friction. However, their antimicrobial efficacy, surface roughness, and frictional resistance are not assessed before. Fifty-five stainless-steel brackets were divided into 5 groups of 11 brackets each: uncoated brackets, brackets coated with 60 µm silver, 100 µm silver, 60 µm titanium, and 100 µm titanium. Coating was performed using physical vapor deposition method. For friction test, three brackets from each group were randomly selected and tested. For scanning electron microscopy and atomic-force microscopy assessments, one and one brackets were selected from each group. For antibacterial assessment, six brackets were selected from each group. Of them, three were immediately subjected to direct contact with S. mutans. Colonies were counted 3, 6, 24, and 48 h of contact. The other three were stored in water for 3 months. Then were subjected to a similar direct contact test. Results pertaining to both subgroups were combined. Groups were compared statistically. Mean (SD) friction values of the groups 'control, silver-60, silver-100, titanium-60, and titanium-100' were 0.55 ± 0.14, 0.77 ± 0.08, 0.82 ± 0.11, 1.52 ± 0.24, and 1.57 ± 0.41 N, respectively (p = .0004, Kruskal-Wallis). Titanium frictions were significantly greater than control (p < .05), but silver groups were not (p > .05, Dunn). In the uncoated group, colony count increased exponentially within 48 h. The coated groups showed significant reductions in colony count (p < .05, two-way-repeated-measures ANOVA). In conclusions, all four explained coatings reduce surface roughness and bacterial growth. Nano-titanium films are not suitable for friction reduction. Nano-silver results were not conclusive and need future larger studies. © 2016 Wiley Periodicals, Inc.

High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

NASA Astrophysics Data System (ADS)

Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

2016-08-01

Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Fini, P.; Wu, X.; Tarsa, E.; Golan, Y.; Srikant, V.; Keller, S.; Denbaars, S.; Speck, J.

1998-08-01

The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

Friction behavior of self-ligating and conventional brackets with different ligature systems.

PubMed

Szczupakowski, Alexandra; Reimann, Susanne; Dirk, Cornelius; Keilig, Ludger; Weber, Anna; Jäger, Andreas; Bourauel, Christoph

2016-07-01

Self-ligating brackets are widely believed to offer better clinical efficiency and, in particular, less friction. Thus, the goal of this in vitro investigation was to assess the friction behavior of different bracket/archwire/ligature combinations during simulated canine retraction. An important aspect of this work was to determine whether conventional bracket systems behave differently in passive or active self-ligating brackets used with a Slide™ ligature, an elastic ligature, or a steel ligature. Three conventional (Contour, Class One; Discovery(®), Dentaurum; Mystique MB, GAC) and six self-ligating (Carriere SL, Class One; Clarity™ SL, 3M Unitek; Damon3, Ormco; In-Ovation(®) C, GAC; Speed Appliance, Speed System™; QuicKlear(®), Forestadent(®)) bracket systems were analyzed. All brackets featured a 0.022″ slot (0.56 mm). Each conventional system was tested with a steel ligature (0.25 mm; Remanium(®), Dentaurum), an elastic ligature (1.3 mm in diameter; Dentalastics, Dentaurum), and a modified elastic ligature (Slide™; Leone(®)). Each combination was used with four archwires, including rectangular stainless steel (0.46 × 0.64 mm, 0.018 × 0.025″, Dentaurum), rectangular nickel-titanium with Teflon coating (0.46 × 0.64 mm, 0.018 × 0.025″, Forestadent(®)), round coaxial nickel-titanium (0.46 mm, 0.018″, Speed), and half-round/half-square (D-profile) stainless steel (0.46 mm, 0.018″, Speed). In the orthodontic measurement and simulation system (OMSS), retraction of a canine was simulated on a Frasaco model replicated in resin. Based on the force systems, the respective friction values were determined. For each combination of materials, five brackets of the same type were tested and five single measurements performed. Friction values were found to vary distinctly with the different combinations, modifiers being the ligature systems and the archwire types. Any significant friction differences between the steel-ligated, Slide�

Adjustable Bracket For Entry Of Welding Wire

NASA Technical Reports Server (NTRS)

Gilbert, Jeffrey L.; Gutow, David A.

1993-01-01

Wire-entry bracket on welding torch in robotic welding system provides for adjustment of angle of entry of welding wire over range of plus or minus 30 degrees from nominal entry angle. Wire positioned so it does not hide weld joint in view of through-the-torch computer-vision system part of robot-controlling and -monitoring system. Swiveling bracket also used on nonvision torch on which wire-feed-through tube interferes with workpiece. Angle simply changed to one giving sufficient clearance.

Nd:YAG Laser-aided ceramic brackets debonding: Effects on shear bond strength and enamel surface

NASA Astrophysics Data System (ADS)

Han, Xianglong; Liu, Xiaolin; Bai, Ding; Meng, Yao; Huang, Lan

2008-11-01

In order to evaluate the efficiency of Nd:YAG laser-aided ceramic brackets debonding technique, both ceramic brackets and metallic brackets were bonded with orthodontic adhesive to 30 freshly extracted premolars. The specimens were divided into three groups, 10 in each, according to the brackets employed and the debonding techniques used: (1) metallic brackets with shear debonding force, (2) ceramic brackets with shear debonding force, and (3) ceramic brackets with Nd:YAG laser irradiation. The result showed that laser irradiation could diminish shear bond strength (SBS) significantly and produce the most desired ARI scores. Moreover, scanning electron microscopy investigation displayed that laser-aided technique induced little enamel scratch or loss. It was concluded that Nd:YAG laser could facilitate the debonding of ceramic brackets and diminish the amount of remnant adhesive without damaging enamel structure.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr; Tekcan, Burak; Ozgit-Akgun, Cagla

2015-01-15

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels aremore » observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.« less

Bracket slot and archwire dimensions: manufacturing precision and third order clearance.

PubMed

Joch, Astrid; Pichelmayer, Margit; Weiland, Frank

2010-12-01

To determine the accuracy of different manufacturer's dimensions of bracket slots and stainless steel archwires and compare these against the tolerance limits given by DIN 13971 and 13971-2. Further to calculate torque play and effective torque and to compare the results to nominal torque. A laboratory investigation. The Department of Orthodontics and Dentofacial Orthopedics at Medical University of Graz, Austria. Ten upper central incisor brackets (0·022 inch) from five different bracket systems were investigated. Bracket slot height was measured with leaf gauges. The height and width of 10 stainless steel archwires with dimensions either 0·019×0·022 or 0·020×0·025 inch were measured using a micrometer. All measured bracket slot heights were within the upper and lower tolerance limits given by DIN 13971-2. Archwires showed measurements outside the upper and lower tolerance limits given by DIN 13971. The smallest effective torque loss (4·5°) resulted from the combination of the 0·022-inch SPEED System bracket with the 0·020×0·025-inch SPEED Wire small upper. The highest torque loss (11·7°) was found with the 0·022-inch Damon 2 bracket and the 0·019×0·025-inch ECO Charge 1 archwire. The accuracy of the manufacturers dimension is not to be taken for granted. A perfect 'finishing' still requires correction bends put in by the orthodontist.

Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

PubMed

Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

2017-06-28

In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

Analysis of Shear Bond Strength and Morphology of Er:YAG Laser-Recycled Ceramic Orthodontic Brackets.

PubMed

Han, Ruo-qiao; Yang, Kai; Ji, Ling-fei; Ling, Chen

2016-01-01

The aim of this study was to compare the recycling of deboned ceramic brackets via an Er:YAG laser or via the traditional chairside processing methods of flaming and sandblasting; shear bond strength and morphological changes were evaluated in recycled brackets versus new brackets. 3M Clarity Self-Ligating Ceramic Brackets with a microcrystalline base were divided into groups subjected to flaming, sandblasting, or exposure to an Er:YAG laser. New ceramic brackets served as a control group. Shear bond strengths were determined with an Electroforce test machine and tested for statistical significance through analysis of variance. Morphological examinations of the recycled ceramic bracket bases were conducted with scanning electron microscopy and confocal laser scanning microscopy. Residue on the bracket base was analyzed with Raman spectroscopy. Faded, dark adhesive was left on recycled bracket bases processed via flaming. Adhesive was thoroughly removed by both sandblasting and exposure to an Er:YAG laser. Compared with new brackets, shear bond strength was lower after sandblasting (p < 0.05), but not after exposure to an Er:YAG laser. The Er:YAG laser caused no damage to the bracket. Er:YAG lasers effectively remove adhesive from the bases of ceramic brackets without damaging them; thus, this method may be preferred over other recycling methods.

Interior view, detail to show typical bracket with gold leaf ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior view, detail to show typical bracket with gold leaf ornament, here the bracket is located the north of the speaker on the second floor - National Park Seminary, Ballroom, Linden Lane, Silver Spring, Montgomery County, MD

Topographic and chemical surface modifications to metal brackets after a period in the mouth.

PubMed

Houb-Dine, Afaf; Bahije, Loubna; Oualalou, Youssef; Benyahia, Hicham; Zaoui, Fatima

2017-09-01

In the current state of our knowledge, the effects of corrosion on the performance of orthodontic appliances and on patient health are far from clear. Awareness of these problems has led to a growing demand for nickel-free products. Titanium brackets were recently launched on the market as an alternative to stainless-steel brackets. However, the use of fluorides for caries prevention creates a risk of corrosion of these titanium appliances. The aim of this study is to examine the corrosion of stainless-steel and titanium brackets in clinical orthodontic use, focusing on the impact of fluorine. After approval by the ethics committee and the informed consent of the patients, 30 candidates for multi-bracket treatment were selected on the basis of certain exclusion criteria. The patients were divided into 4 groups: group 1: titanium brackets and fluorine protection; group 2: titanium brackets without fluorine protection; group 3: stainless-steel brackets and fluorine protection; group 4: stainless-steel brackets without fluorine protection. Analysis of the brackets removed after 4months in the mouth, using scanning electron microscopy (SEM) with phase contrast, revealed a difference in the surface topography of the metal brackets and the presence of chromium coating on the surface of the titanium appliances. Copyright © 2017 CEO. Published by Elsevier Masson SAS. All rights reserved.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Nagaboopathy; Raghavan, Srinivasan; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012

2015-10-07

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed atmore » an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.« less

Ion Release and Galvanic Corrosion of Different Orthodontic Brackets and Wires in Artificial Saliva.

PubMed

Tahmasbi, Soodeh; Sheikh, Tahereh; Hemmati, Yasamin B

2017-03-01

To investigate the galvanic corrosion of brackets manufactured by four different companies coupled with stainless steel (SS) or nickel-titanium (NiTi) wires in an artificial saliva solution. A total of 24 mandibular central incisor Roth brackets of four different manufacturers (American Orthodontics, Dentaurum, Shinye, ORJ) were used in this experimental study. These brackets were immersed in artificial saliva along with SS or NiTi orthodontic wires (0.016'', round) for 28 days. The electric potential difference of each bracket/ wire coupled with a saturated calomel reference electrode was measured via a voltmeter and recorded constantly. Corrosion rate (CR) was calculated, and release of ions was measured with an atomic absorption spectrometer. Stereomicroscope was used to evaluate all samples. Then, samples with corrosion were further assessed by scanning electron microscope and energy-dispersive X-ray spectroscopy. Two-way analysis of variance was used to analyze data. Among ions evaluated, release of nickel ions from Shinye brackets was significantly higher than that of other brackets. The mean potential difference was significantly lower in specimens containing a couple of Shinye brackets and SS wire compared with other specimens. No significant difference was observed in the mean CR of various groups (p > 0.05). Microscopic evaluation showed corrosion in two samples only: Shinye bracket coupled with SS wire and American Orthodontics bracket coupled with NiTi wire. Shinye brackets coupled with SS wire showed more susceptibility to galvanic corrosion. There were no significant differences among specimens in terms of the CR or released ions except the release of Ni ions, which was higher in Shinye brackets.

Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition

NASA Astrophysics Data System (ADS)

Wang, Lei; Li, Liuan; Zhang, Tong; Liu, Xinke; Ao, Jin-Ping

2018-01-01

In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al2O3 film on the sensing area utilizing atomic layer deposition (ALD). The presence of the Al2O3 film leads to an obvious reduction of surface state density as well as leakage current in the solution, which is beneficial for improving the stability of the ISFET. Furthermore, the sensitivity of the ISFET was improved to 57.8 mV/pH, which is very close to the Nernstian limit at room temperature. The pH sensitivity enhancement can be explained by the higher density of sensing site as well as better surface hydrophilicity.

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

PubMed Central

2011-01-01

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank surfaces. Forward and reverse current-voltage characteristics of the diodes showed high rectification ratio and high Schottky barrier heights, giving evidence of very small Fermi level pinning. A large increase of current was observed after exposing diodes to flow of gas blend hydrogen in nitrogen. Current change ratio about 700,000 with 0.1% hydrogen blend was achieved, which is more than two orders-of-magnitude improvement over the best result reported previously. Hydrogen detection limit of the diodes was estimated at 1 ppm H2/N2. The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures. PMID:21831273

Comparison of the efficacy of tooth alignment among lingual and labial brackets: an in vitro study.

PubMed

Alobeid, Ahmad; El-Bialy, Tarek; Reimann, Susanne; Keilig, Ludger; Cornelius, Dirk; Jäger, Andreas; Bourauel, Christoph

2018-03-13

The aim of this study was to evaluate the efficacy of tooth alignment with conventional and self-ligating labial and lingual orthodontic bracket systems. We tested labial brackets (0.022″ slot size) and lingual brackets (0.018″ slot size). The labial brackets were: (i) regular twin brackets (GAC-Twin [Dentsply]), (ii) passive self-ligating brackets including (Damon-Q® [ORMCO]; Ortho classic H4™ [Orthoclassic]; FLI®SL [RMO]), and (iii) active self-ligating brackets (GAC In-Ovation®C [DENTSPLY] and SPEED™[Strite]). The lingual brackets included (i) twin bracket systems (Incognito [3M] and Joy™ [Adenta]), (ii) passive self-ligating bracket system (GAC In-Ovation®LM™ [Dentsply]), and (iii) active self-ligating bracket system (Evolution SLT [Adenta]). The tested wires were Thermalloy-NiTi 0.013″ and 0.014″ (RMO). The archwires were tied to the regular twin brackets with stainless steel ligatures 0.010″ (RMO). The malocclusion simulated a displaced maxillary central incisor in the x-axis (2 mm gingivally) and in the z-axis (2 mm labially). The results showed that lingual brackets are less efficient in aligning teeth when compared with labial brackets in general. The vertical correction achieved by labial bracket systems ranged from 72 to 95 per cent with 13″ Thermalloy wires and from 70 to 87 per cent with 14″ Thermalloy wires. In contrast, the achieved corrections by lingual brackets with 13″ Thermalloy wires ranged between 25-44 per cent and 29-52 per cent for the 14" Thermalloy wires. The anteroposterior correction achieved by labial brackets ranged between 83 and 138 per cent for the 13″ Thermalloy and between 82 and 129 per cent for the 14″ Thermalloy wires. On the other hand, lingual brackets corrections ranged between 12 and 40 per cent for the 13″ Thermalloy wires and between 30 and 45 per cent for the 14″ Thermalloy wires. This is a lab-based study with different labial and lingual bracket slot sizes (however they are the

Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

2000-01-01

Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces

PubMed Central

2012-01-01

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized. PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea PMID:22373387

[Effects of different resin removal methods on shear bond strength of rebonded orthodontic brackets].

PubMed

Wu, Hai-miao; Zhao, Bin-jiao; Chen, Dong

2015-06-01

To compare the shear bond strength (SBS) of rebonded orthodontic metal brackets with different resin removal methods. Forty extracted premolars were chosen as samples and divided into 4 experimental groups. The teeth were bonded with brackets. The brackets from 3 groups were debonded while adhesive remnants were removed from bracket bases by methods of grinding, sandblasting, and direct flaming, respectively and then rebonded. The SBS values of all rebonded brackets were determined after pH cycling experiment for 30 days. Some rebonded bracket bases were selected and observed under scanning electron microscope (SEM). The data was analyzed by one-way ANOVA test using SPSS 13.0 software package. Statistical analysis revealed a significant difference of SBS values among the 4 experimental groups (P<0.05). The SBS values of the group by direct flaming was significantly lower compared to the other groups (P<0.05). There was no significant difference of SBS values among the other groups. The rebonded brackets after resin removal by grinding and sandblasting have a similar SBS compared to the initial brackets adhesive.

The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition.

PubMed

Weng, Xiaojun; Burke, Robert A; Redwing, Joan M

2009-02-25

The structure and chemistry of the catalyst particles that terminate GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition were investigated using a combination of electron diffraction, high-resolution transmission electron microscopy, and x-ray energy dispersive spectrometry. The crystal symmetry, lattice parameter, and chemical composition obtained reveal that the catalyst particles are Ni(3)Ga with an ordered L 1(2) structure. The results suggest that the catalyst is a solid particle during growth and therefore favor a vapor-solid-solid mechanism for the growth of GaN nanowires under these conditions.

A multi-center randomized controlled trial to compare a self-ligating bracket with a conventional bracket in a UK population: Part 1: Treatment efficiency.

PubMed

O'Dywer, Lian; Littlewood, Simon J; Rahman, Shahla; Spencer, R James; Barber, Sophy K; Russell, Joanne S

2016-01-01

To use a two-arm parallel trial to compare treatment efficiency between a self-ligating and a conventional preadjusted edgewise appliance system. A prospective multi-center randomized controlled clinical trial was conducted in three hospital orthodontic departments. Subjects were randomly allocated to receive treatment with either a self-ligating (3M SmartClip) or conventional (3M Victory) preadjusted edgewise appliance bracket system using a computer-generated random sequence concealed in opaque envelopes, with stratification for operator and center. Two operators followed a standardized protocol regarding bracket bonding procedure and archwire sequence. Efficiency of each ligation system was assessed by comparing the duration of treatment (months), total number of appointments (scheduled and emergency visits), and number of bracket bond failures. One hundred thirty-eight subjects (mean age 14 years 11 months) were enrolled in the study, of which 135 subjects (97.8%) completed treatment. The mean treatment time and number of visits were 25.12 months and 19.97 visits in the SmartClip group and 25.80 months and 20.37 visits in the Victory group. The overall bond failure rate was 6.6% for the SmartClip and 7.2% for Victory, with a similar debond distribution between the two appliances. No significant differences were found between the bracket systems in any of the outcome measures. No serious harm was observed from either bracket system. There was no clinically significant difference in treatment efficiency between treatment with a self-ligating bracket system and a conventional ligation system.

An in vitro Evaluation of Friction Characteristics of Conventional Stainless Steel and Self-ligating Stainless Steel Brackets with different Dimensions of Archwires in Various Bracket-archwire Combination.

PubMed

Sridharan, K; Sandbhor, Shailesh; Rajasekaran, U B; Sam, George; Ramees, M Mohamed; Abraham, Esther A

2017-08-01

The purpose of this research is to compare the frictional attributes of stainless steel conventional brackets and self-ligating stainless steel brackets with different dimensions of archwires. The test was carried with two sets of maxillary brackets: (1) Conventional stainless steel (Victory Series), (2) stainless steel self-ligating (SmartClip) without first premolar brackets. Stainless steel, nickel-titanium (NiTi), and beta-Ti which are the types of orthodontic wire alloys were tested in this study. To monitor the frictional force, a universal testing machine (Instron 33R 4467) that comprises 10 kg tension load cell was assigned on a range of 1 kg and determined from 0 to 2 kg, which allows moving of an archwire along the brackets. One-way analysis of variance was used to test the difference between groups. To analyze the statistical difference between the two groups, Student's t-test was used. For Victory Series in static friction, p-value was 0.946 and for kinetic friction it was 0.944; at the same time for SmartClip, the p value for static and kinetic frictional resistance was 0.497 and 0.518 respectively. Hence, there was no statistically significant difference between the NiTi and stainless steel archwires. It is concluded that when compared with conventional brackets with stainless steel ligatures, self-ligating brackets can produce significantly less friction during sliding. Beta-Ti archwires expressed high amount of frictional resistance and the stainless steel archwires comprise low frictional resistance among all the archwire materials. In orthodontics, frictional resistance has always had a major role. Its ability to impair tooth movement leads to the need for higher forces to move the teeth and it extends the treatment time which results in loss of posterior anchorage. Friction in orthodontics is related with sliding mechanics when a wire is moving through one or a series of bracket slots.

Shingle assembly with support bracket

DOEpatents

Almy, Charles

2007-01-02

A shingle system, mountable to a support surface, includes overlapping shingle assemblies. Each shingle assembly comprises a support bracket, having upper and lower ends, secured to a shingle body. The upper end has an upper support portion, extending away from the shingle body, and an upper support-surface-engaging part, engageable with a support surface so that the upper edge of the shingle body is positionable at a first distance from the support surface to create a first gap therebetween. The lower end has a lower support portion extending away from the lower surface. The support brackets create: (1) a second gap between shingle bodies of the first and second shingle assemblies, and (2) an open region beneath the first shingle assembly fluidly coupling the first and second gaps.

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

PubMed Central

2014-01-01

Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 107 Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition. PACS 77.55.D; 61.46.Km; 78.40.Fy PMID:25114641

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.

PubMed

Han, Ning; Wang, Fengyun; Yang, Zaixing; Yip, SenPo; Dong, Guofa; Lin, Hao; Fang, Ming; Hung, TakFu; Ho, Johnny C

2014-01-01

Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10(7) Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition. 77.55.D; 61.46.Km; 78.40.Fy.

Analysis of Shear Bond Strength and Morphology of Er:YAG Laser-Recycled Ceramic Orthodontic Brackets

PubMed Central

Han, Ruo-qiao; Ji, Ling-fei; Ling, Chen

2016-01-01

Objective. The aim of this study was to compare the recycling of deboned ceramic brackets via an Er:YAG laser or via the traditional chairside processing methods of flaming and sandblasting; shear bond strength and morphological changes were evaluated in recycled brackets versus new brackets. Materials and Methods. 3M Clarity Self-Ligating Ceramic Brackets with a microcrystalline base were divided into groups subjected to flaming, sandblasting, or exposure to an Er:YAG laser. New ceramic brackets served as a control group. Shear bond strengths were determined with an Electroforce test machine and tested for statistical significance through analysis of variance. Morphological examinations of the recycled ceramic bracket bases were conducted with scanning electron microscopy and confocal laser scanning microscopy. Residue on the bracket base was analyzed with Raman spectroscopy. Results. Faded, dark adhesive was left on recycled bracket bases processed via flaming. Adhesive was thoroughly removed by both sandblasting and exposure to an Er:YAG laser. Compared with new brackets, shear bond strength was lower after sandblasting (p < 0.05), but not after exposure to an Er:YAG laser. The Er:YAG laser caused no damage to the bracket. Conclusion. Er:YAG lasers effectively remove adhesive from the bases of ceramic brackets without damaging them; thus, this method may be preferred over other recycling methods. PMID:27047964

Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0 0 1) substrates

NASA Astrophysics Data System (ADS)

Lai, Billy; Li, Qiang; Lau, Kei May

2018-02-01

InAs/GaSb nanoridge heterostructures were grown on V-grooved (0 0 1) Si by metal organic chemical vapor deposition. Combining the aspect ratio trapping process and a low temperature GaAs buffer, we demonstrated high quality GaSb nanoridge templates for InAs/GaSb heterostructure growth. Two different interfaces, a transitional GaAsSb and an InSb-like interface, were investigated when growing these heterostructures. A 500 °C growth temperature in conjunction with a GaAsSb interface was determined to produce the optimal interface, properly compensating for the tensile strain accumulated when growing InAs on GaSb. Without the need for a complicated switching sequence, this GaAsSb-like interface utilized at the optimized temperature is the initial step towards InAs/GaSb type II superlattice and other device structures integrated onto Si.

Sensitivity of titanium brackets to the corrosive influence of fluoride-containing toothpaste and tea.

PubMed

Harzer, W; Schröter, A; Gedrange, T; Muschter, F

2001-08-01

Titanium brackets are used in orthodontic patients with an allergy to nickel and other specific substances. In recent studies, the corrosive properties of fluoride-containing toothpastes with different pH values were investigated. The present in vivo study tested how the surfaces of titanium brackets react to the corrosive influence of acidic fluoride-containing toothpaste during orthodontic treatment. Molar bands were placed on 18 orthodontic patients. In these same patients, titanium brackets were bonded on the left quadrants and stainless steel brackets on the right quadrants of the upper and lower arches. Fifteen patients used Gel Kam containing soluble tin fluoride (pH 3.2), whereas 3 used fluoride-free toothpaste. The brackets were removed for evaluation by light microscopy and scanning microscopy 5.5 to 7.0 months and 7.5 to 17 months after bonding. The quality and quantity of elements present were measured by scanning microscopy. Macroscopic evaluation showed the matte gray color of titanium brackets dominating over the silver gleam of the steel brackets. The plaque accumulation on titanium brackets is high because of the very rough surface. Pitting and crevices were observed in only 3 of the 165 brackets tested. The present in vivo investigation confirms the results of in vitro studies, but the changes are so minor that titanium brackets can safely be used for up to 18 months. Wing surfaces should be improved by modifying the manufacturing process.

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

NASA Astrophysics Data System (ADS)

Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, W. K.; Wang, L. S.; Surya, C.

2000-01-01

Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]‖GaN[112¯0]‖Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

PubMed

Duan, Tian Li; Pan, Ji Sheng; Wang, Ning; Cheng, Kai; Yu, Hong Yu

2017-08-17

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al 2 O 3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al 2 O 3 due to the occurrence of Ga-N bond break and Ga-O bond forming during Al 2 O 3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N 2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges.

Structural Analysis of the Redesigned Ice/Frost Ramp Bracket

NASA Technical Reports Server (NTRS)

Phillips, D. R.; Dawicke, D. S.; Gentz, S. J.; Roberts, P. W.; Raju, I. S.

2007-01-01

This paper describes the interim structural analysis of a redesigned Ice/Frost Ramp bracket for the Space Shuttle External Tank (ET). The proposed redesigned bracket consists of mounts for attachment to the ET wall, supports for the electronic/instrument cables and propellant repressurization lines that run along the ET, an upper plate, a lower plate, and complex bolted connections. The eight nominal bolted connections are considered critical in the summarized structural analysis. Each bolted connection contains a bolt, a nut, four washers, and a non-metallic spacer and block that are designed for thermal insulation. A three-dimensional (3D) finite element model of the bracket is developed using solid 10-node tetrahedral elements. The loading provided by the ET Project is used in the analysis. Because of the complexities associated with accurately modeling the bolted connections in the bracket, the analysis is performed using a global/local analysis procedure. The finite element analysis of the bracket identifies one of the eight bolted connections as having high stress concentrations. A local area of the bracket surrounding this bolted connection is extracted from the global model and used as a local model. Within the local model, the various components of the bolted connection are refined, and contact is introduced along the appropriate interfaces determined by the analysts. The deformations from the global model are applied as boundary conditions to the local model. The results from the global/local analysis show that while the stresses in the bolts are well within yield, the spacers fail due to compression. The primary objective of the interim structural analysis is to show concept viability for static thermal testing. The proposed design concept would undergo continued design optimization to address the identified analytical assumptions and concept shortcomings, assuming successful thermal testing.

Light energy attenuation through orthodontic ceramic brackets at different irradiation times.

PubMed

Santini, Ario; Tiu, Szu Hui; McGuinness, Niall J P; Aldossary, Mohammed Saeed

2016-09-01

To evaluate the total light energy (TLE) transmission through three types of ceramic brackets with, bracket alone and with the addition of orthodontic adhesive, at different exposure durations, and to compare the microhardness of the cured adhesive. Three different makes of ceramic brackets, Pure Sapphire(M), Clarity™ ADVANCED(P) and Dual Ceramic(P) were used. Eighteen specimens of each make were prepared and allocated to three groups (n = 6). MARC(®)-resin calibrator was used to determine the light curing unit (LCU) tip irradiance (mW/cm(2)) and TLE (J/cm(2)) transmitted through the ceramic brackets, and through ceramic bracket plus Transbond™ XT Light Cure Adhesive, for 5, 10 and 20 s. Vickers-hardness values at the bottom of the cured adhesive were determined. Statistical analysis used one-way analysis of variance (ANOVA); P = 0.05. TLE transmission rose significantly among all samples with increasing exposure durations. TLE reaching the adhesive- enamel interface was less than 10 J/cm(2), and through monocrystalline and polycrystalline ceramic brackets was significantly different (P < 0.05). Pure Sapphire(M) showed the highest amount of TLE transmission and Vickers-hardness values for 5, 10 and 20 s. Following manufacturer's recommendations, insufficient TLE may be delivered to the adhesive: increasing the exposure durations may be required when adhesive is cured through ceramic brackets. Clinicians are advised to measure the tip irradiance of their LCUs and increase curing time beyond 5 s. Orthodontic clinicians should understand the type of light curing device and the orthodontic adhesive used in their practice.

A Stillinger-Weber Potential for InGaN

DOE PAGES

Zhou, X. W.; Jones, R. E.

2017-09-27

Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compoundmore » configurations. Lastly, this is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende In xGa 1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface.« less

Evaluation of the friction force generated by monocristalyne and policristalyne ceramic brackets in sliding mechanics.

PubMed

Pimentel, Roberta Ferreira; de Oliveira, Roberto Sotto Maior Fortes; Chaves, Maria das Graças Afonso Miranda; Elias, Carlos Nelson; Gravina, Marco Abdo

2013-01-01

To evaluate and compare "in vitro" the maximum friction force generated by three types of esthetic brackets, two types of polycrystalline conventional ceramic brackets (20/40 and InVu) and one type of sapphire monocrystalline bracket (Radiance) in dry and artificial saliva wet settings. Also, to evaluate the influence exerted by artificial saliva on the friction forces of those brackets. Tests were performed in dry and artificial saliva wet setting (Oral Balance) by using an EMIC DL 10000 testing machine, simulating a 2 mm slide of 0.019 x 0.025-in rectangular stainless steel wires over the pre-angulated and pre-torqued (right superior canine, Roth prescription, slot 0.022 x 0.030-in) brackets (n = 18 for each bracket). In order to compare groups in dry and wet settings, the ANOVA was used. For comparisons related to the dry versus wet setting, the student t test was used for each group. The results showed that in the absence of saliva the Radiance monocrystalline brackets showed the highest friction coefficients, followed by the 20/40 and the InVu polycrystalline brackets. In tests with artificial saliva, the Radiance and the 20/40 brackets had statistically similar friction coefficients and both were greater than that presented by the InVu brackets. The artificial saliva did not change the maximum friction force of the Radiance brackets, but, for the others (20/40 and InVu), an increase of friction was observed in its presence. The InVu brackets showed, in the absence and in the presence of saliva, the lowest friction coefficient.

Optimization of Compressor Mounting Bracket of a Passenger Car

NASA Astrophysics Data System (ADS)

Kalsi, Sachin; Singh, Daljeet; Saini, J. S.

2018-05-01

In the present work, the CAE tools are used for the optimization of the compressor mounting bracket used in an automobile. Both static and dynamic analysis is done for the bracket. With the objective to minimize the mass and increase the stiffness of the bracket, the new design is optimized using shape and topology optimization techniques. The optimized design given by CAE tool is then validated experimentally. The new design results in lower level of vibrations, contribute to lower mass along with lesser cost which is effective in air conditioning system as well as the efficiency of a vehicle. The results given by CAE tool had a very good correlation with the experimental results.

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

PubMed

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

2018-05-01

GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

Intraoral corrosion of self-ligating metallic brackets and archwires and the effect on friction

NASA Astrophysics Data System (ADS)

Tima, Lori Lynn

The purpose of this study was to investigate how the frictional coefficient was affected due to intraoral use. A secondary aim of this study was to determine whether or not there was a relationship between corrosion of orthodontic alloys and friction via scanning electron microscopic qualitative analysis. Orthodontic brackets and 0.019 x 0.025 inch stainless steel archwires were collected and divided into three groups of n=10: used bracket and used wires (UBUW), used brackets and new wires (UBNW), and new brackets and new wires (NBNW). New materials were as-received from the manufacturer, and used materials were clinically used bracket and wires collected from patients following orthodontic treatment. Archwires were pulled through bracket slots at a rate of 0.5mm/min while friction forces were measured. Following a cleaning process, the surface topography of the bracket slots was examined under a scanning electron microscope (SEM). Based on a 1-factor MANOVA, there was no significant group effect (all p>0.05) on frictional forces. Partial eta squared values indicated that intraoral exposure had only a small effect on frictional forces (≤ 3%). Qualitative analysis of SEM images did not show an association between surface characteristics of the bracket slots and magnitude of frictional force. Results suggest that surface corrosion from intraoral use does not significantly affect friction at the bracket wire interface.

Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K.

2018-04-01

Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ˜4 × 1012 cm-2 fewer positive fixed charges and up to ˜1 × 1013 cm-2 eV-1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Evaluation of friction in orthodontics using various brackets and archwire combinations-an in vitro study.

PubMed

Kumar, Sujeet; Singh, Shamsher; Hamsa P R, Rani; Ahmed, Sameer; Prasanthma; Bhatnagar, Apoorva; Sidhu, Manreet; Shetty, Pramod

2014-05-01

The aim of this study was to compare frictional resistance which was produced between conventional brackets (0.022 slot Otho-Organiser) and self ligating brackets (active Forestadent and passive Damon III) by using various arch wire combinations (0.016 Niti, 0.018 Niti, 0.017 x 0.025 SS and 0.019 x 0.025 SS). An experimental model which consisted of 5 aligned stainless steel 0.022-in brackets was used to assess frictional forces which were produced by SLBs (self ligating brackets) and CELs (conventional elastomeric ligatures) with use of 0.016 nickel titanium, 0.018 nickel titanium, 0.017 X 0.025"stainless steel and 0.019 X 0.025"stainless steel wires. One way ANOVA test was used to study the effect of the bracket type, wire alloy and section on frictional resistance test . Conventional brackets produced highest levels of friction for all bracket/archwire combinations. Both Damon III and Forestadent brackets were found to produce significantly lower levels of friction when they were compared with elastomerically tied conventional brackets. SLBs are valid alternatives for low friction during sliding mechanics.

Nanosilver coated orthodontic brackets: in vivo antibacterial properties and ion release.

PubMed

Metin-Gürsoy, Gamze; Taner, Lale; Akca, Gülçin

2017-02-01

Silver nanoparticles are currently utilized in the fields of dentistry. The aim of this study was to evaluate the antibacterial properties and ion release of nanosilver coated orthodontic brackets compared to conventional brackets. Nanosilver coating process was applied to standard orthodontic brackets placed on the mandibular incisors of Wistar Albino rats in the study group and conventional brackets in the control group. Dental plaque, mucosal vestibular smears, saliva, and blood samples were collected from rats at various days. The amounts of nanosilver ions in blood and saliva were measured and microbiological evaluation was made for Streptococcus mutans. For testing cariogenicity, all rats were sacrificed at the end of 75 days under anaesthesia. Teeth were stained using a caries indicator, then the caries ratio was assessed. Nanosilver coated orthodontic bracket favoured the inhibition of S.mutans on Day 30 and reduction of caries on the smooth surfaces. The nanosilver amounts in the saliva and serum samples were significantly higher in the study group on Day 7. It is suggested that nanosilver coated orthodontic brackets, as an antibacterial agent without patient compliance, could be helpful for the prevention of white spot lesions during fixed orthodontic treatment. © The Author 2016. Published by Oxford University Press on behalf of the European Orthodontic Society. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Comparison of deflection forces of esthetic archwires combined with ceramic brackets*

PubMed Central

MATIAS, Murilo; de FREITAS, Marcos Roberto; de FREITAS, Karina Maria Salvatore; JANSON, Guilherme; HIGA, Rodrigo Hitoshi; FRANCISCONI, Manoela Fávaro

2018-01-01

Abstract Coated archwires and ceramic brackets have been developed to improve facial esthetics during orthodontic treatment. However, their mechanical behavior has been shown to be different from metallic archwires and brackets. Therefore, the aim of this study was to compare the deflection forces in coated nickel-titanium (NiTi) and esthetic archwires combined with ceramic brackets. Material and Methods Non-coated NiTi (NC), rhodium coated NiTi (RC), teflon coated NiTi (TC), epoxy coated NiTi (EC), fiber-reinforced polymer (FRP), and the three different conventional brackets metal-insert polycrystalline ceramic (MI-PC), polycrystalline ceramic (PC) and monocrystalline ceramic (MC) were used. The specimens were set up on a clinical simulation device and evaluated in a Universal Testing Machine (Instron). An acrylic device, representative of the right maxillary central incisor was buccolingually activated and the unloading forces generated were recorded at 3, 2, 1 and 0.5 mm. The speed of the testing machine was 2 mm/min. ANOVA and Tukey tests were used to compare the different archwires and brackets. Results The brackets presented the following decreasing force ranking: monocrystalline, polycrystalline and polycrystalline metal-insert. The decreasing force ranking of the archwires was: rhodium coated NiTi (RC), non-coated NiTi (NC), teflon coated NiTi (TC), epoxy coated NiTi (EC) and fiber-reinforced polymer (FRP). At 3 mm of unloading the FRP archwire had a plastic deformation and produced an extremely low force in 2; 1 and 0.5 mm of unloading. Conclusion Combinations of the evaluated archwires and brackets will produce a force ranking proportional to the combination of their individual force rankings. PMID:29451650

Comparison of deflection forces of esthetic archwires combined with ceramic brackets.

PubMed

Matias, Murilo; Freitas, Marcos Roberto de; Freitas, Karina Maria Salvatore de; Janson, Guilherme; Higa, Rodrigo Hitoshi; Francisconi, Manoela Fávaro

2018-01-01

Coated archwires and ceramic brackets have been developed to improve facial esthetics during orthodontic treatment. However, their mechanical behavior has been shown to be different from metallic archwires and brackets. Therefore, the aim of this study was to compare the deflection forces in coated nickel-titanium (NiTi) and esthetic archwires combined with ceramic brackets. Material and Methods Non-coated NiTi (NC), rhodium coated NiTi (RC), teflon coated NiTi (TC), epoxy coated NiTi (EC), fiber-reinforced polymer (FRP), and the three different conventional brackets metal-insert polycrystalline ceramic (MI-PC), polycrystalline ceramic (PC) and monocrystalline ceramic (MC) were used. The specimens were set up on a clinical simulation device and evaluated in a Universal Testing Machine (Instron). An acrylic device, representative of the right maxillary central incisor was buccolingually activated and the unloading forces generated were recorded at 3, 2, 1 and 0.5 mm. The speed of the testing machine was 2 mm/min. ANOVA and Tukey tests were used to compare the different archwires and brackets. Results The brackets presented the following decreasing force ranking: monocrystalline, polycrystalline and polycrystalline metal-insert. The decreasing force ranking of the archwires was: rhodium coated NiTi (RC), non-coated NiTi (NC), teflon coated NiTi (TC), epoxy coated NiTi (EC) and fiber-reinforced polymer (FRP). At 3 mm of unloading the FRP archwire had a plastic deformation and produced an extremely low force in 2; 1 and 0.5 mm of unloading. Conclusion Combinations of the evaluated archwires and brackets will produce a force ranking proportional to the combination of their individual force rankings.

Influence of the bracket on bonding and physical behavior of orthodontic resin cements.

PubMed

Bolaños-Carmona, Victoria; Zein, Bilal; Menéndez-Núñez, Mario; Sánchez-Sánchez, Purificación; Ceballos-García, Laura; González-López, Santiago

2015-01-01

The aim of the study is to determine the influence of the type of bracket, on bond strength, microhardness and conversion degree (CD) of four resin orthodontic cements. Micro-tensile bond strength (µTBS) test between the bracket base and the cement was carried out on glass-hour-shaped specimens (n=20). Vickers Hardness Number (VHN) and micro-Raman spectra were recorded in situ under the bracket base. Weibull distribution, ANOVA and non-parametric test were applied for data analysis (p<0.05). The highest values of ή as well as the β Weibull parameter were obtained for metallic brackets with Transbond™ plastic brackets with the self-curing cement showing the worst performance. The CD was from 80% to 62.5%.

Occurrence and severity of enamel decalcification adjacent to bracket bases and sub-bracket lesions during orthodontic treatment with two different lingual appliances

PubMed Central

Klang, Elisabeth; Helms, Hans-Joachim; Wiechmann, Dirk

2016-01-01

Summary Background: Using lingual enamel surfaces for bracket placement not only has esthetic advantages, but may also be suitable in terms of reducing frequencies of enamel decalcifications. Objective: To test the null-hypothesis that there is no significant difference in enamel decalcification or cavitation incidence adjacent to and beneath bracket bases between two lingual multi-bracket (MB) appliances that are different in terms of design, material composition, and manufacturing technology (group A: WIN, DW-LingualSystems; group B: Incognito, 3M-Unitek), taking into account patient- and treatment-related variables on white spot lesion (WSL) formation. Methods: Standardized, digital, top-view photographs of 630 consecutive subjects (16214 teeth; n Incognito = 237/6076 teeth; n WIN = 393/10138 teeth; mean age: 17.47±7.8; m/f 43.2/56.8%) with completed lingual MB treatment of the upper and lower permanent teeth 1–7 were screened for decalcification or cavitation adjacent to and beneath the bracket bases before and after treatment, scored from 0 to 7. Non-parametric ANOVA was used for main effects ‘appliance type’, ‘gender’, ‘treatment complexity’, ‘grouped age’ (≤16/>16 years), and ‘treatment duration’ as covariable, at an α-level of 5%. Results: About 2.57% [5.94%] of all teeth in group A [B] developed decalcifications. Subject-related incidence was 9.59% [16.17%] for upper incisors in group A [B], and 12.98% [25.74%] for all teeth 16–46. There were significant effects by gender, age, and treatment duration. Conclusion: The null-hypothesis was rejected: sub-bracket lesions were significantly less frequent in group A, while frequencies of WSL adjacent to brackets were not significantly affected by appliance type. In view of the overall low incidences of lingual post-orthodontic white-spot lesions, the use of lingual appliances is advocated as a valid strategy for a reduction of enamel decalcifications during orthodontic treatment. PMID

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

PubMed

Zhernokletov, Dmitry M; Negara, Muhammad A; Long, Rathnait D; Aloni, Shaul; Nordlund, Dennis; McIntyre, Paul C

2015-06-17

We correlate interfacial defect state densities with the chemical composition of the Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron photoelectron emission spectroscopy (PES), cathodoluminescence and high-temperature capacitance-voltage measurements. The influence of the wet chemical pretreatments involving (1) HCl+HF etching or (2) NH4OH(aq) exposure prior to atomic layer deposition (ALD) of Al2O3 were investigated on n-type GaN (0001) substrates. Prior to ALD, PES analysis of the NH4OH(aq) treated surface shows a greater Ga2O3 component compared to either HCl+HF treated or as-received surfaces. The lowest surface concentration of oxygen species is detected on the acid etched surface, whereas the NH4OH treated sample reveals the lowest carbon surface concentration. Both surface pretreatments improve electrical characteristics of MOS capacitors compared to untreated samples by reducing the Al2O3/GaN interface state density. The lowest interfacial trap density at energies in the upper band gap is detected for samples pretreated with NH4OH. These results are consistent with cathodoluminescence data indicating that the NH4OH treated samples show the strongest band edge emission compared to as-received and acid etched samples. PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al2O3 deposition on the GaN substrate.

Er,Cr:YSGG Laser as a Novel Method for Rebonding Failed Ceramic Brackets.

PubMed

Sohrabi, Aydin; Jafari, Sanaz; Kimyai, Soodabeh; Rikhtehgaran, Sahand

2016-10-01

Since there is no standard method for rebonding loose ceramic brackets, the aim of this study was to evaluate the possibility of using Er,Cr:YSGG laser to eliminate the remaining composite materials from the base of ceramic brackets and to compare the bond strength of rebonded brackets with the new ones. Sixty-two extracted human premolars were mounted in acrylic cylinders. Thirty-one ceramic brackets were bonded, and shear bond strength was tested using Hounsfield testing machine. The remnants of the bonding material were removed from the bases of brackets using Er,Cr:YSGG laser. These brackets were rebonded to 31 fresh teeth and again shear bond strength was measured. Pattern of debonding was assessed in both cases under a stereomicroscope and graded according to ARI index. Data were analyzed with independent t-test and Fisher's exact test. Mean shear bond strength of the bond and rebond groups was 12.29 ± 5.46 and 10.58 ± 5.16 MPa, respectively. There were no significant differences between the two groups (p = 0.21). Pattern of bond failure was not statistically different between the two groups. Er,Cr:YSGG laser was effective in removing the remnants of bonding material from the base of ceramic brackets without any interference with the ceramic base itself, demonstrating that it might be a suitable method for rebonding ceramic brackets.

Gingival response in orthodontic patients: Comparative study between self-ligating and conventional brackets.

PubMed

Folco, Alejandra A; Benítez-Rogé, Sandra C; Iglesias, Marina; Calabrese, Diana; Pelizardi, Cristina; Rosa, Alcira; Brusca, Marisa I; Hecht, Pedro; Mateu, María E

2014-01-01

Orthodontic brackets contribute to the accumulation of bacterial plaque on tooth surfaces because they hinder oral hygiene. In contrast to conventional brackets, self-ligating brackets do not require additional parts to support the arches, thus improving dental hygiene. The aim of this study was to compare the gingival response in orthodontic patients wearing self-ligating or conventional brackets. A sample of 22 patients aged 16 to 30 years was divided into two groups: Group A, treated with selfligating brackets (Damon system) and Group B, treated with conventional brackets (Roth technique). The following were assessed during the treatment: Plaque Index (PI), Gingival Index (GI) and Probing Depth (PD), and sub-gingival samples were taken from teeth 14/24 for microbiological observation. No statistically significant difference was found between Groups A and B; p>0.05 (sign-ranked) or between PI, GI and PD at the different times (Friedman's Analysis of Variance), even though the indices were found to increase at 14 days, particularly for self-ligating brackets. The quantity and quality of microorganisms present were compatible with health on days 0, 28 and 56. As from day 14 there is a predominance of microbiota compatible with gingivitis in both groups. In the samples studied, orthodontic treatment increases bacterial plaque and inflammatory gingival response, but gingival-periodontal health can be maintained with adequate basic therapy. Self-ligating and conventional brackets produced similar gingival response.

Electric-regulated enhanced in-plane uniaxial anisotropy in FeGa/PMN-PT composite using oblique pulsed laser deposition

NASA Astrophysics Data System (ADS)

Zhang, Yi; Huang, Chaojuan; Turghun, Mutellip; Duan, Zhihua; Wang, Feifei; Shi, Wangzhou

2018-04-01

The FeGa film with in-plane uniaxial magnetic anisotropy was fabricated onto different oriented single-crystal lead magnesium niobate-lead titanate using oblique pulsed laser deposition. An enhanced in-plane uniaxial magnetic anisotropy field of FeGa film can be adjusted from 18 Oe to 275 Oe by tuning the oblique angle and polarizing voltage. The competitive relationship of shape anisotropy and strain anisotropy has been discussed, which was induced by oblique angle and polarizing voltage, respectively. The (100)-oriented and (110)-oriented PMN-PT show completely different characters on voltage-dependent magnetic properties, which could be attributed to various anisotropy directions depended on different strain directions.

In vitro study of color stability of polycrystalline and monocrystalline ceramic brackets

PubMed Central

de Oliveira, Cibele Braga; Maia, Luiz Guilherme Martins; Santos-Pinto, Ary; Gandini Júnior, Luiz Gonzaga

2014-01-01

Objective The aim of this in vitro study was to analyze color stability of monocrystalline and polycrystalline ceramic brackets after immersion in dye solutions. Methods Seven ceramic brackets of four commercial brands were tested: Two monocrystalline and two polycrystalline. The brackets were immersed in four dye solutions (coffee, red wine, Coke and black tea) and in artificial saliva for the following times: 24 hours, 7, 14 and 21 days, respectively. Color changes were measured by a spectrophotometer. Data were assessed by Multivariate Profile Analysis, Analysis of Variance (ANOVA) and Multiple Comparison Tests of means. Results There was a perceptible change of color in all ceramic brackets immersed in coffee (ΔE* Allure = 7.61, Inspire Ice = 6.09, Radiance = 6.69, Transcend = 7.44), black tea (ΔE* Allure = 6.24, Inspire Ice = 5.21, Radiance = 6.51, Transcend = 6.14) and red wine (ΔE* Allure = 6.49, Inspire Ice = 4.76, Radiance = 5.19, Transcend = 5.64), but no change was noticed in Coke and artificial saliva (ΔE < 3.7). Conclusion Ceramic brackets undergo color change when exposed to solutions of coffee, black tea and red wine. However, the same crystalline structure, either monocrystalline or polycrystalline, do not follow the same or a similar pattern in color change, varying according to the bracket fabrication, which shows a lack of standardization in the manufacturing process. Coffee dye produced the most marked color changes after 21 days of immersion for most ceramic brackets evaluated. PMID:25279530

Galvanic coupling of steel and gold alloy lingual brackets with orthodontic wires.

PubMed

Polychronis, Georgios; Al Jabbari, Youssef S; Eliades, Theodore; Zinelis, Spiros

2018-03-06

The aim of this research was to assess galvanic behavior of lingual orthodontic brackets coupled with representative types of orthodontic wires. Three types of lingual brackets: Incognito (INC), In-Ovation L (IOV), and STb (STB) were combined with a stainless steel (SS) and a nickel-titanium (NiTi) orthodontic archwire. All materials were initially investigated by scanning electron microscopy / x-ray energy dispersive spectroscopy (SEM/EDX) while wires were also tested by x-ray diffraction spectroscopy (XRD). All bracket-wire combinations were immersed in acidic 0.1M NaCl 0.1M lactic acid and neutral NaF 0.3% (wt) electrolyte, and the potential differences were continuously recorded for 48 hours. The SEM/EDX analysis revealed that INC is a single-unit bracket made of a high gold (Au) alloy while IOV and STB are two-piece appliances in which the base and wing are made of SS alloys. The SS wire demonstrated austenite and martensite iron phase, while NiTi wire illustrated an intense austenite crystallographic structure with limited martensite. All bracket wire combinations showed potential differences below the threshold of galvanic corrosion (200 mV) except for INC and STB coupled with NiTi wire in NaF media. The electrochemical results indicate that all brackets tested demonstrated galvanic compatibility with SS wire, but fluoride treatment should be used cautiously with NiTi wires coupled with Au and SS brackets.

In vitro study of color stability of polycrystalline and monocrystalline ceramic brackets.

PubMed

de Oliveira, Cibele Braga; Maia, Luiz Guilherme Martins; Santos-Pinto, Ary; Gandini Junior, Luiz Gonzaga

2014-01-01

The aim of this in vitro study was to analyze color stability of monocrystalline and polycrystalline ceramic brackets after immersion in dye solutions. Seven ceramic brackets of four commercial brands were tested: Two monocrystalline and two polycrystalline. The brackets were immersed in four dye solutions (coffee, red wine, Coke and black tea) and in artificial saliva for the following times: 24 hours, 7, 14 and 21 days, respectively. Color changes were measured by a spectrophotometer. Data were assessed by Multivariate Profile Analysis, Analysis of Variance (ANOVA) and Multiple Comparison Tests of means. There was a perceptible change of color in all ceramic brackets immersed in coffee (ΔE* Allure = 7.61, Inspire Ice = 6.09, Radiance = 6.69, Transcend = 7.44), black tea (ΔE* Allure = 6.24, Inspire Ice = 5.21, Radiance = 6.51, Transcend = 6.14) and red wine (ΔE* Allure = 6.49, Inspire Ice = 4.76, Radiance = 5.19, Transcend = 5.64), but no change was noticed in Coke and artificial saliva (ΔE < 3.7). Ceramic brackets undergo color change when exposed to solutions of coffee, black tea and red wine. However, the same crystalline structure, either monocrystalline or polycrystalline, do not follow the same or a similar pattern in color change, varying according to the bracket fabrication, which shows a lack of standardization in the manufacturing process. Coffee dye produced the most marked color changes after 21 days of immersion for most ceramic brackets evaluated.

Bond efficacy of recycled orthodontic brackets: A comparative in vitro evaluation of two methods.

PubMed

Shetty, Vikram; Shekatkar, Yash; Kumbhat, Neesu; Gautam, G; Karbelkar, Shalan; Vandekar, Meghna

2015-01-01

Recycling of orthodontic brackets in developing orthodontic economies is an extremely common procedure. Bonding protocols and reliability of these brackets is, however, questionable, and still the subject of research. The aim was to evaluate and compare the shear bond strength of brackets recycled with sandblasting and silicoating. Ninety extracted human premolars were bonded with 0.022" SS brackets (American Orthodontics, Sheboygan USA) and then debonded. The debonded brackets were divided into three groups of 30 each. Group I: Sandblasting with 50-μm aluminum oxide (control group) Group II: Sandblasting with 50-μm aluminum oxide followed by metal primer application Group III: Silicoating with 30-μm Cojet sand followed by silane application and rebonded with Transbond XT. The sandblasted brackets and silicoated brackets were viewed under the scanning electron microscope, immediately after surface conditioning before rebonding. The shear bond strength with each group was tested. One-way analysis of variance, post-hoc Scheffe multiple comparison tests. The results showed that sandblasting created more irregularities and deeper erosions while silica coating created superficial irregularities and shallow erosions.

Assessment of Ions released from Three Types of Orthodontic Brackets immersed in Different Mouthwashes: An in vitro Study.

PubMed

Nahidh, Mohammed; Garma, Noor Mh; Jasim, Esraa S

2018-01-01

Herbs are used widely in medicine. The purpose of the present study was to assess the ion release from gold-plated orthodontic bracket compared with other stainless steel brackets, and based on the findings of the study, the orthodontists can choose the most biocompatible brackets and mouthwashes useful in the clinical practice. A total of 150 orthodontic brackets from Orthotechnology™ Company, USA (50 stainless steel one-piece brackets, 50 stainless steel two-piece brackets, and 50 gold brackets) were immersed in four mouthwashes in addition to distilled water. Ten of each type of brackets in every media were immersed under 37°C for 45 days. Ions released in these mouthwashes were measured, and comparisons among different bracket types and among various mouthwashes were done by one-way analysis of variance (ANOVA) and then with Games-Howell tests. Increased amounts of ions released in herbal mouth-washes were recorded in gold and two-piece brackets in comparison with one-piece stainless steel brackets. Herbal mouthwashes must be used with caution as they showed an increased amount of ions released in comparison with chlorhexidine. One-piece stainless steel bracket system is the most compatible bracket type, as they released the least amount of ions. One-piece stainless steel brackets are better than two-piece brackets in terms of ions released.

Cleansing orthodontic brackets with air-powder polishing: effects on frictional force and degree of debris.

PubMed

Leite, Brisa Dos Santos; Fagundes, Nathalia Carolina Fernandes; Aragón, Mônica Lídia Castro; Dias, Carmen Gilda Barroso Tavares; Normando, David

2016-01-01

Debris buildup on the bracket-wire interface can influence friction. Cleansing brackets with air-powder polishing can affect this process. The aim of this study was to evaluate the frictional force and amount of debris remaining on orthodontic brackets subjected to prophylaxis with air-powder polishing. Frictional force and debris buildup on the surface of 28 premolar brackets were evaluated after orthodontic treatment. In one hemiarch, each bracket was subjected to air-powder polishing (n = 14) for five seconds, while the contralateral hemiarch (n = 14) served as control. Mechanical friction tests were performed and images of the polished bracket surfaces and control surfaces were examined. Wilcoxon test was applied for comparative analysis between hemiarches at p < 0.05. Brackets that had been cleaned with air-powder polishing showed lower friction (median = 1.27 N) when compared to the control surfaces (median = 4.52 N) (p < 0.01). Image analysis showed that the control group exhibited greater debris buildup (median = 2.0) compared with the group that received prophylaxis with air-powder polishing (median = 0.5) (p < 0.05). Cleansing orthodontic brackets with air-powder polishing significantly reduces debris buildup on the bracket surface while decreasing friction levels observed during sliding mechanics.

Intrapulpal Temperature Increase During Er:YAG Laser-Aided Debonding of Ceramic Brackets.

PubMed

Yilanci, Hilal; Yildirim, Zeynep Beyza; Ramoglu, Sabri Ilhan

2017-04-01

The purpose of this study was to evaluate the temperature changes in the pulp chamber while using a newly introduced application of Er:YAG laser to debond ceramic brackets in a study model with a pulpal circulation with and without thermocycled samples. An esthetic alternative to stainless steel brackets, ceramic brackets have been proposed. However, because of their low fracture resistance and high bond strengths, ceramic brackets can cause a problem when they are being removed using conventional techniques. Experimental Groups A and B were established for samples with or without thermocycling. The same 20 maxillary central incisor and 20 premolar teeth were used in both groups. Pulpal blood microcirculation was simulated using an apparatus described in a previous study. Monocrystalline brackets were bonded by using Transbond XT. In Group A, brackets were debonded using the Er:YAG laser (600 mJ, 2 Hz, long pulse, and no air or water spray) after being stored in distilled water for 24 h. In Group B, brackets were debonded using the same laser system as that used in Group A after being stored in distilled water for 24 h and then thermocycled for a total of 5000 cycles between 5°C and 55°C. The laser irradiation duration and intrapulpal temperature changes were measured. In Group B, the intrapulpal temperature increase of the central incisors was significantly higher than that of the premolar teeth. In the central incisor and premolar teeth groups, there were no statistically significant difference between Groups A and B (p > 0.05). A positive correlation was found between laser irradiation duration and temperature increase (p < 0.01). The use of Er:YAG laser is an effective method for debonding the monocrystalline ceramic brackets. This method can be used safely under the consideration of intrapulpal temperature changes.

Investigation of bracket bonding for orthodontic treatments using en-face optical coherence tomography

NASA Astrophysics Data System (ADS)

Sinescu, Cosmin; Negrutiu, Meda L.; Hughes, Michael; Bradu, Adrian; Todea, Carmen; Rominu, Roxana; Dodenciu, Dorin; Laissue, Philippe L.; Podoleanu, Adrian G.

2008-04-01

Despite good diagnosis and treatment planning, orthodontic treatment can fail if bonding fails. It is now common practice to address the aesthetic appearance of patients using aesthetic brackets instead of metal ones. Therefore, bonding aesthetic brackets has become an issue for orthodontists today. Orthodontic bonding is mainly achieved using composite resin but can also be performed with glass ionomer or resin cements. For improving the quality of bonding, the enamel is acid etched for 30 seconds with 38% phosphoric acid and then a bonding agent is applied. In our study we investigated and compared the quality of bonding between ceramic brackets, polymeric brackets and enamel, respectively using a new investigation method-OCT. The aim of our study was to evaluate the resin layer at the bracket base-tooth interface.

Torque efficiency of square and rectangular archwires into 0.018 and 0.022 in. conventional brackets.

PubMed

Papageorgiou, Spyridon N; Sifakakis, Iosif; Doulis, Ioannis; Eliades, Theodore; Bourauel, Christoph

2016-01-01

The aim of this study was to compare the torque efficacy of square and rectangular wires in 0.018- and 0.022-in. conventionally ligated brackets. Brackets of the same prescription were evaluated in both slot dimensions. Identical acrylic resin models of the maxilla were bonded with the brackets and mounted on the Orthodontic Measurement and Simulation System. Ten 0.018 × 0.018 in., 0.018 × 0.022 in., and 0.018 × 0.025 in. stainless steel wires were evaluated in the 0.018-in. brackets and ten 0.019 × 0.019 in., 0.019 × 0.025 in., and 0.019 × 0.026 in. stainless steel wires were evaluated in the 0.022-in. brackets. A 15° buccal root torque was gradually applied to the right central incisor bracket, and the moments were recorded at this position. One-way ANOVA was applied for both bracket slot sizes along with post hoc analysis for the various archwire sizes. The mean measured moments varied between 10.78 and 30.60 Nmm among the assessed wire-and-bracket combinations. Both square and rectangular archwires in the 0.018-in. bracket system exerted statistically significantly higher moments in comparison with their counterparts in the 0.022-in. bracket system. Rectangular archwires exerted statistically significantly higher moments than square archwires, both for the 0.018- and the 0.022-in. bracket system. Rectangular archwires seem to be more efficient in torque exertion, especially in 0.018-in. brackets.

Evaluation of Antibacterial Effects of Silver-Coated Stainless Steel Orthodontic Brackets

PubMed Central

Arash, Valiollah; Keikhaee, Fatemeh; Rajabnia, Ramazan; Khafri, Soraya; Tavanafar, Saeid

2016-01-01

Objectives: White spots and enamel demineralization around orthodontic brackets are among the most important complications resulting from orthodontic treatments. Since the antibacterial properties of metals and metallic particles have been well documented, the aim of this study was to assess the antibacterial effect of stainless steel orthodontic brackets coated with silver (Ag) particles. Materials and Methods: In this study, 40 standard metal brackets were divided into two groups of 20 cases and 20 controls. The brackets in the case group were coated with Ag particles using an electroplating method. Atomic force microscopy and scanning electron microscopy were used to assess the adequacy of the coating process. In addition, antibacterial tests, i.e., disk diffusion and direct contact tests were performed at three, six, 24, and 48 hours, and 15 and 30 days using a Streptococcus mutans strain. The results were analyzed using Student’s t-test and repeated measures ANOVA. Results: Analyses via SEM and AFM confirmed that excellent coatings were obtained by using an electroplating method. The groups exhibited similar behavior when subjected to the disk diffusion test in the agar medium. However, the bacterial counts of the Ag-coated brackets were, in general, significantly lower (P<0.001) than those of their non-coated counterparts. Conclusions: Brackets coated with Ag, via an electroplating method, exhibited antibacterial properties when placed in direct contact with Streptococcus mutans. This antibacterial effect persisted for 30 days after contact with the bacteria. PMID:27536328

Evaluation of Antibacterial Effects of Silver-Coated Stainless Steel Orthodontic Brackets.

PubMed

Arash, Valiollah; Keikhaee, Fatemeh; Rabiee, Sayed Mahmood; Rajabnia, Ramazan; Khafri, Soraya; Tavanafar, Saeid

2016-01-01

White spots and enamel demineralization around orthodontic brackets are among the most important complications resulting from orthodontic treatments. Since the antibacterial properties of metals and metallic particles have been well documented, the aim of this study was to assess the antibacterial effect of stainless steel orthodontic brackets coated with silver (Ag) particles. In this study, 40 standard metal brackets were divided into two groups of 20 cases and 20 controls. The brackets in the case group were coated with Ag particles using an electroplating method. Atomic force microscopy and scanning electron microscopy were used to assess the adequacy of the coating process. In addition, antibacterial tests, i.e., disk diffusion and direct contact tests were performed at three, six, 24, and 48 hours, and 15 and 30 days using a Streptococcus mutans strain. The results were analyzed using Student's t-test and repeated measures ANOVA. Analyses via SEM and AFM confirmed that excellent coatings were obtained by using an electroplating method. The groups exhibited similar behavior when subjected to the disk diffusion test in the agar medium. However, the bacterial counts of the Ag-coated brackets were, in general, significantly lower (P<0.001) than those of their non-coated counterparts. Brackets coated with Ag, via an electroplating method, exhibited antibacterial properties when placed in direct contact with Streptococcus mutans. This antibacterial effect persisted for 30 days after contact with the bacteria.

Shallow doping effect of ZnO treatment using atomic layer deposition process on p-type In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Lee, Changmin; An, Youngseo; Choi, Sungho; Kim, Hyoungsub

2018-06-01

The number of atomic layer deposition (ALD) cycles for ZnO treatment was changed to study its merits and demerits as a passivation layer prior to the deposition of a HfO2 film on a p-type In0.53Ga0.47As substrate. Even a few cycles of ZnO ALD treatment was effective in improving the capacitance–voltage (C–V) characteristics by suppressing strong Fermi-level pinning, which occurred because of a high interface state density near the lower half of the In0.53Ga0.47As band gap. Increases in the number of ZnO ALD cycles induced an increase in the minimum capacitance and response of minority carriers at higher frequencies in the inversion region of the C–V characteristics. According to various temperature- and frequency-dependent C–V analyses, these changes were explained by the shallow p-type doping effect of Zn atoms in the In0.53Ga0.47As substrate. As a disadvantage, ZnO ALD treatment caused a slight increase in the dielectric leakage current.

Laser Induced Electrodeposition on Polyimide and GaAs Substrates

DTIC Science & Technology

1983-10-01

6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

Comparison of the frictional characteristics of aesthetic orthodontic brackets measured using a modified in vitro technique

PubMed Central

Arici, Nursel

2015-01-01

Objective The coefficients of friction (COFs) of aesthetic ceramic and stainless steel brackets used in conjunction with stainless steel archwires were investigated using a modified linear tribometer and special computer software, and the effects of the bracket slot size (0.018 inches [in] or 0.022 in) and materials (ceramic or metal) on the COF were determined. Methods Four types of ceramic (one with a stainless steel slot) and one conventional stainless steel bracket were tested with two types of archwire sizes: a 0.017 × 0.025-in wire in the 0.018-in slots and a 0.019 × 0.025-in wire in the 0.022-in slot brackets. For pairwise comparisons between the 0.018-in and 0.022-in slot sizes in the same bracket, an independent sample t-test was used. One-way and two-way analysis of variance (ANOVA) and Tukey's post-hoc test at the 95% confidence level (α = 0.05) were also used for statistical analyses. Results There were significant differences between the 0.022-in and 0.018-in slot sizes for the same brand of bracket. ANOVA also showed that both slot size and bracket slot material had significant effects on COF values (p < 0.001). The ceramic bracket with a 0.022-in stainless steel slot showed the lowest mean COF (µ = 0.18), followed by the conventional stainless steel bracket with a 0.022-in slot (µ = 0.21). The monocrystalline alumina ceramic bracket with a 0.018-in slot had the highest COF (µ = 0.85). Conclusions Brackets with stainless steel slots exhibit lower COFs than ceramic slot brackets. All brackets show lower COFs as the slot size increases. PMID:25667915

Comparison of the force levels among labial and lingual self-ligating and conventional brackets in simulated misaligned teeth.

PubMed

Alobeid, Ahmad; El-Bialy, Tarek; Khawatmi, Said; Dirk, Cornelius; Jäger, Andreas; Bourauel, Christoph

2017-08-01

The aim of this study was to evaluate force levels exerted by levelling arch wires with labial and lingual conventional and self-ligating brackets. The tested orthodontic brackets were of the 0.022-in slot size for labial and 0.018-in for lingual brackets and were as follows: 1. Labial brackets: (i) conventional bracket (GAC-Twin, Dentsply), (ii) passive self-ligating (SL) brackets (Damon-Q®, ORMCO; Ortho classic H4™, Orthoclassic; FLI®SL, Rocky Mountain Orthodontics) and (iii) active SL brackets (GAC In-Ovation®C, DENTSPLY and SPEED™, Strite). 2. Lingual brackets: (i) conventional brackets (Incognito, 3M and Joy™, Adenta); (ii) passive SL bracket (GAC In-Ovation®LM™, Dentsply and (iii) active SL bracket (Evolution SLT, Adenta). Thermalloy-NiTi 0.013-in and 0.014-in arch wires (Rocky Mountain Orthodontics) were used with all brackets. The simulated malocclusion represented a maxillary central incisor displaced 2 mm gingivally (x-axis) and 2 mm labially (z-axis). Lingual bracket systems showed higher force levels (2.4 ± 0.2 to 3.8 ± 0.2 N) compared to labial bracket systems (from 1.1 ± 0.1 to 2.2 ± 0.4 N). However, the differences between SL and conventional bracket systems were minor and not consistent (labial brackets: 1.2 ± 0.1 N for the GAC Twin and 1.1 ± 0.1 to 1.6 ± 0.1 N for the SL brackets with 0.013-in thermalloy; lingual brackets: 2.5 ± 0.2 to 3.5 ± 0.1 N for the conventional and 2.7 ± 0.3 to 3.4 ± 0.1 N for the SL brackets with 0.013-in Thermalloy). This is an in vitro study with different slot sizes in the labial and lingual bracket systems, results should be interpreted with caution. Lingual bracket systems showed higher forces compared to labial bracket systems that might be of clinical concern. We recommend highly flexible nickel titanium arch wires lower than 0.013-in for the initial levelling and alignment especially with lingual appliances. © The Author 2017. Published by Oxford University Press on behalf of the European

Friction Forces during Sliding of Various Brackets for Malaligned Teeth: An In Vitro Study

PubMed Central

Crincoli, Vito; Di Bisceglie, Maria Beatrice; Balsamo, Antonio; Serpico, Vitaliano; Chiatante, Francesco; Pappalettere, Carmine; Boccaccio, Antonio

2013-01-01

Aims. To measure the friction force generated during sliding mechanics with conventional, self-ligating (Damon 3 mx, Smart Clip, and Time 3) and low-friction (Synergy) brackets using different archwire diameters and ligating systems in the presence of apical and buccal malalignments of the canine. Methods. An experimental setup reproducing the right buccal segment of the maxillary arch was designed to measure the friction force generated at the bracket/wire and wire/ligature interfaces of different brackets. A complete factorial plan was drawn up and a three-way analysis of variance (ANOVA) was carried out to investigate whether the following factors affect the values of friction force: (i) degree of malalignment, (ii) diameter of the orthodontic wire, and (iii) bracket/ligature combination. Tukey post hoc test was also conducted to evaluate any statistically significant differences between the bracket/ligature combinations analyzed. Results. ANOVA showed that all the above factors affect the friction force values. The friction force released during sliding mechanics with conventional brackets is about 5-6times higher than that released with the other investigated brackets. A quasilinear increase of the frictional forces was observed for increasing amounts of apical and buccal malalignments. Conclusion. The Synergy bracket with silicone ligature placed around the inner tie-wings appears to yield the best performance. PMID:23533364

An in vitro study into the efficacy of complex tooth alignment with conventional and self-ligating brackets.

PubMed

Montasser, M A; Keilig, L; Bourauel, C

2015-02-01

To evaluate the efficacy of tooth alignment achieved by various small cross-section archwire/bracket combinations using the orthodontic measurement and simulation system. The study comprised three types of orthodontic brackets 1) conventional ligating (Victory Series and Mini-Taurus), 2) self-ligating (SmartClip a passive self-ligating bracket and Time3 an active self-ligating bracket), and 3) a conventional low-friction bracket (Synergy). All brackets had a nominal 0.022″ slot size. Brackets were combined with 1) 0.012″ stainless steel, 2) 0.012″ Orthonol, 3) 0.012″ Thermalloy, and 4) 0.0155″ coaxial archwires. Archwires were tied to the conventional brackets with stainless steel ligatures and elastomeric rings. The malocclusion simulated represented a central upper incisor displaced 2 mm gingivally (x-axis) and 2 mm labially (z-axis). The inciso-gingival correction achieved by the different archwire/bracket combinations ranged from 15 to 95%, while the labio-lingual correction ranged from 10 to 95%. The smallest correction was achieved by coaxial, Orthonol, and thermally archwires when ligated with the elastomeric rings to conventional brackets. Stainless steel archwires achieved from 65 to 90% of inciso-gingival correction and from 60 to 90% of labio-lingual correction. The resultant tooth alignment was the product of interaction between the archwire type, bracket type, and bracket design including ligature type. Small cross-sectional archwires might produce up to 95% correction if combined properly with the bracket system. Elastomeric rings when used with conventional brackets limit the efficacy of malalignment correction. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Growth and structure of In{sub 0.5}Ga{sub 0.5}Sb quantum dots on GaP(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sala, E. M.; Stracke, G.; Schlichting, S.

2016-09-05

Stranski-Krastanov (SK) growth of In{sub 0.5}Ga{sub 0.5}Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 10{sup 9} to 2 × 10{sup 11} cm{sup −2} depending on material deposition and Sb-flush time. When In{sub 0.5}Ga{sub 0.5}Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

Slot deformation of various stainless steel bracket due to the torque force of the beta-titanium wire

NASA Astrophysics Data System (ADS)

Huda, M. M.; Siregar, E.; Ismah, N.

2017-08-01

Stainless steel bracket slot deformation ffects the force applied to teeth and it can impede tooth movement and prolong orthodontic treatment time. The aim of this study is to determine the slot deformation due to torque of a 0.021 × 0.025 inch Beta Titanium wire with a torsional angle of 30° and 45° for five different bracket brands: y, 3M, Biom, Versadent, Ormco, and Shinye. The research also aims to compare the deformation and amount of torque among all five bracket brands at torsional angles of 30° and 45°. Fifty stainless steel edgewise brackets from the five bracket group brands (n=10) were attached to acrylic plates. The bracket slot measurements were carried out in two stages. In the first stage, the, deformation was measured by calculating the average bracket slot height using a stereoscopy microscope before and after application of torque. In the second stage, the torque was measured using a torque measurement apparatus. The statistical analysis shows that slot deformations were found on all five bracket brands with a clinical permanent deformation on the Biom (2.79 μm) and Shinye (2.29 μm) brackets. The most torque was observed on the 3M bracket, followed by the Ormco, Versadent, Shinye, and Biom brackets. When the brands were compared, a correlation between bracket slot deformation and the amount of torque was found, but the correlation was not statistically significant for the 3M and Ormco brackets and the Biom and Shinye brackets. There is a difference in the amount of torque between the five brands with a torsional angle of 30° (except the 3M and Ormco brackets) and those with a torsional angle of 45°. The composition of the metal and the manufacturing process are the factors that influence the occurrence of bracket slot deformation and the amount of torque. A manufacturing process using metal injection molding (MIM) and metal compositions of AISI 303 and 17-4 PH stainless steel reduce the risk of deformation.

Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Liwang; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

2016-01-15

Atomic layer deposition is used to form TiO{sub 2} films from tetrakis dimethyl amino titanium and H{sub 2}O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy. An increase in the deposition temperature up to 250 °C leads to enhancement of the native oxide removal. For depositions at 300 °C and above, interface reoxidation is observed during the initial deposition cycles but when the films are thicker than 3 nm, the surface oxides are removed steadily. Based on these observations, two distinct filmmore » growth regimes are identified; up to 250 °C, layer-by-layer dominates while at higher temperatures island growth takes over. Angle resolved x-ray photoelectron spectroscopy measurements performed on 3 nm TiO{sub 2} film deposited at 325 °C on both surfaces demonstrates a very important difference between the two substrates: for GaAs the native oxides remaining in the stack are localized at the interface, while for InAs(100), the indium oxides are mixed in the TiO{sub 2} film.« less

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-12-01

The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

NASA Astrophysics Data System (ADS)

Choi, Sungwoo

1992-01-01

This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

PubMed

Bilousov, Oleksandr V; Carvajal, Joan J; Geaney, Hugh; Zubialevich, Vitaly Z; Parbrook, Peter J; Martínez, Oscar; Jiménez, Juan; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

2014-10-22

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

A Comparative Evaluation of Adherence of Microorganism to Different Types of Brackets: A Scanning Electron Microscopic Study.

PubMed

Shashidhar, E P; Sahitya, M; Sunil, T; Murthy, Anup R; Rani, M S

2015-09-01

The purpose of this study was to evaluate and compare the adherence of microorganism to different types of brackets using the scanning electron microscope (SEM). A double-blinded study was undertaken to evaluate and adherence of microorganisms to different types of brackets using SEM. At random, 12 patients reporting for treatment to the department of Orthodontics VS Dental College and Hospital were selected. Four types of brackets were included in the present study stainless steel, titanium, composite, and ceramic. Brackets were bonded to teeth of the patient on all the four quadrants. The teeth included for bonding were lateral incisor, canine, first premolar, and second premolar. The brackets were left for 72 h. After 72 h brackets were debonded, and they were evaluated by SEM for adherence of microorganism in the slot and tie wings surface. The SEM images were graded, and the adherence of microorganism to the brackets in the surfaces and the four different quadrants were recorded. There is a significant difference in adherence of microorganisms to the various types of brackets (P < 0.001) and the surfaces (P < 0.05) included in the study. However, there is no significance in the mean adherence of microorganisms in the different quadrants (P > 0.05) included in the study. The interaction of bracket/surface, bracket/quadrant, surface/quadrants was analyzed, there was no significance of comparison of bracket/surfaces/quadrant but the interaction of bracket/quadrant was found to be significant (<0.011). The interaction of bracket/surfaces/quadrant was also found to be significant (<0.003). The maximum adherence of microorganisms was observed with the composite bracket material and the least adherence of microorganisms was observed with the titanium bracket material. The adherence of microorganisms is relatively more in the slot area, when compare to the tie wings surface maximum adherence of microorganism is observed in the upper left quadrant and least adherence

A Comparative Evaluation of Adherence of Microorganism to Different Types of Brackets: A Scanning Electron Microscopic Study

PubMed Central

Shashidhar, E P; Sahitya, M; Sunil, T; Murthy, Anup R; Rani, M S

2015-01-01

Background: The purpose of this study was to evaluate and compare the adherence of microorganism to different types of brackets using the scanning electron microscope (SEM). A double-blinded study was undertaken to evaluate and adherence of microorganisms to different types of brackets using SEM. Materials and Methods: At random, 12 patients reporting for treatment to the department of Orthodontics VS Dental College and Hospital were selected. Four types of brackets were included in the present study stainless steel, titanium, composite, and ceramic. Brackets were bonded to teeth of the patient on all the four quadrants. The teeth included for bonding were lateral incisor, canine, first premolar, and second premolar. The brackets were left for 72 h. After 72 h brackets were debonded, and they were evaluated by SEM for adherence of microorganism in the slot and tie wings surface. The SEM images were graded, and the adherence of microorganism to the brackets in the surfaces and the four different quadrants were recorded. Results: There is a significant difference in adherence of microorganisms to the various types of brackets (P < 0.001) and the surfaces (P < 0.05) included in the study. However, there is no significance in the mean adherence of microorganisms in the different quadrants (P > 0.05) included in the study. The interaction of bracket/surface, bracket/quadrant, surface/quadrants was analyzed, there was no significance of comparison of bracket/surfaces/quadrant but the interaction of bracket/quadrant was found to be significant (<0.011). The interaction of bracket/surfaces/quadrant was also found to be significant (<0.003). Conclusion: The maximum adherence of microorganisms was observed with the composite bracket material and the least adherence of microorganisms was observed with the titanium bracket material. The adherence of microorganisms is relatively more in the slot area, when compare to the tie wings surface maximum adherence of microorganism is

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

NASA Astrophysics Data System (ADS)

Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2018-02-01

N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Shear bond strength of metallic and ceramic brackets using color change adhesives.

PubMed

Stumpf, Aisha de Souza Gomes; Bergmann, Carlos; Prietsch, José Renato; Vicenzi, Juliane

2013-01-01

To determine the shear bond strength of orthodontic brackets using color change adhesives that are supposed to aid in removing excess of bonding material and compare them to a traditional adhesive. Ninety metallic and ninety ceramic brackets were bonded to bovine incisors using two color change adhesives and a regular one. A tensile stress was applied by a universal testing machine. The teeth were observed in a microscope after debonding in order to determine the Adhesive Remnant Index (ARI). The statistical analysis (ANOVA, Tukey, and Kruskall-Wallis tests) demonstrated that the mean bond strength presented no difference when metallic and ceramic brackets were compared, but the bond resistance values were significantly different for the three adhesives used. The most common ARI outcome was the entire adhesive remaining on the enamel. The bond strength was similar for metallic and ceramic brackets when the same adhesive system was used. ARI scores demonstrated that bonding with these adhesives is safe even when ceramic brackets were used. On the other hand, bond strength was too low for orthodontic purposes when Ortho Lite Cure was used.

Resistance to Sliding in Clear and Metallic Damon 3 and Conventional Edgewise Brackets: an In vitro Study

PubMed Central

Karim Soltani, Mohammad; Golfeshan, Farzaneh; Alizadeh, Yoones; Mehrzad, Jabraiel

2015-01-01

Statement of the Problem Frictional forces are considered as important counterforce to orthodontic tooth movement. It is claimed that self-ligating brackets reduce the frictional forces. Purpose The aim of this study was to compare the resistance to sliding in metallic and clear Damon brackets with the conventional brackets in a wet condition. Materials and Method The samples included 4 types of brackets; metallic and clear Damon brackets and metallic and clear conventional brackets (10 brackets in each group). In this study, stainless steel wires sized 0.019×0.025 were employed and the operator’s saliva was used to simulate the conditions of oral cavity. The tidy-modified design was used for simulation of sliding movement. The resistance to sliding and static frictional forces was measured by employing Testometric machine and load cell. Results The mean (±SD) of resistance to sliding was 194.88 (±26.65) and 226.62 (±39.9) g in the esthetic and metallic Damon brackets, while these values were 187.81(±27.84) and 191.17(±66.68) g for the clear and metallic conventional brackets, respectively. Static frictional forces were 206.4(±42.45) and 210.38(±15.89) g in the esthetic and metallic Damon brackets and 220.63(±49.29) and 215.13(±62.38) g in the clear and metallic conventional brackets. According to two-way ANOVA, no significant difference was observed between the two bracket materials (clear and metal) and the two types of bracket (self-ligating versus conventional) regarding resistance to sliding (p= 0.17 and p= 0.23, respectively) and static frictional forces (p= 0.55 and p= 0.96, respectively). Conclusion Neither the type of bracket materials nor their type of ligation made difference in resistance to sliding and static friction. PMID:26106630

Resistance to Sliding in Clear and Metallic Damon 3 and Conventional Edgewise Brackets: an In vitro Study.

PubMed

Karim Soltani, Mohammad; Golfeshan, Farzaneh; Alizadeh, Yoones; Mehrzad, Jabraiel

2015-03-01

Frictional forces are considered as important counterforce to orthodontic tooth movement. It is claimed that self-ligating brackets reduce the frictional forces. The aim of this study was to compare the resistance to sliding in metallic and clear Damon brackets with the conventional brackets in a wet condition. The samples included 4 types of brackets; metallic and clear Damon brackets and metallic and clear conventional brackets (10 brackets in each group). In this study, stainless steel wires sized 0.019×0.025 were employed and the operator's saliva was used to simulate the conditions of oral cavity. The tidy-modified design was used for simulation of sliding movement. The resistance to sliding and static frictional forces was measured by employing Testometric machine and load cell. The mean (±SD) of resistance to sliding was 194.88 (±26.65) and 226.62 (±39.9) g in the esthetic and metallic Damon brackets, while these values were 187.81(±27.84) and 191.17(±66.68) g for the clear and metallic conventional brackets, respectively. Static frictional forces were 206.4(±42.45) and 210.38(±15.89) g in the esthetic and metallic Damon brackets and 220.63(±49.29) and 215.13(±62.38) g in the clear and metallic conventional brackets. According to two-way ANOVA, no significant difference was observed between the two bracket materials (clear and metal) and the two types of bracket (self-ligating versus conventional) regarding resistance to sliding (p= 0.17 and p= 0.23, respectively) and static frictional forces (p= 0.55 and p= 0.96, respectively). Neither the type of bracket materials nor their type of ligation made difference in resistance to sliding and static friction.

Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

DOE PAGES

Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; ...

2009-01-01

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

In vitro evaluation of microleakage under orthodontic brackets bonded with different adhesive systems.

PubMed

Atash, Ramin; Fneiche, Ali; Cetik, Sibel; Bahrami, Babak; Balon-Perin, Alain; Orellana, Maria; Glineur, Régine

2017-01-01

Adhesives systems have a drawback when utilized for bonding orthodontic brackets: they shrink during photopolymerization creating microleakage. The aim of this study was to assess the stability of different orthodontic adhesives around brackets and enamel. Sixty noncarious mandibular premolars extracted for orthodontic reasons were randomly divided into six groups of adhesives used for bonding brackets to dental enamel: NeoBond ® Light Cure Adhesive Kit, Transbond™ Plus Self-Etching, Victory V-Slot APC PLUS ® + Transbond™ MIP, Rely-A-Bond ® Kit, Light Cure Orthodontic Adhesive Kit (OptiBond ® ), and Transbond™ MIP. Following bonding, all teeth underwent 2500 cycles of thermal cycling in baths ranging from 5°C to 55°C before being immersed in 2% methylene blue for 24 h. All samples were examined under a binocular microscope to assess the degree of microleakage at the "bracket-adhesive" and "adhesive-enamel" interfaces in the gingival and occlusal regions of the bracket. A significant difference was found at the "occlusal bracket-adhesive" interface. The highest microleakage values were found in the occlusal region, although no significant. Microleakage was observed in all groups. Group 2 had the highest microleakage values whereas Group 6 had the lowest values.

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Comparative evaluation of nickel discharge from brackets in artificial saliva at different time intervals.

PubMed

Jithesh, C; Venkataramana, V; Penumatsa, Narendravarma; Reddy, S N; Poornima, K Y; Rajasigamani, K

2015-08-01

To determine and compare the potential difference of nickel release from three different orthodontic brackets, in different artificial pH, in different time intervals. Twenty-seven samples of three different orthodontic brackets were selected and grouped as 1, 2, and 3. Each group was divided into three subgroups depending on the type of orthodontic brackets, salivary pH and the time interval. The Nickel release from each subgroup were analyzed by using inductively coupled plasma-Atomic Emission Spectrophotometer (Perkin Elmer, Optima 2100 DV, USA) model. Quantitative analysis of nickel was performed three times, and the mean value was used as result. ANOVA (F-test) was used to test the significant difference among the groups at 0.05 level of significance (P < 0.05). The descriptive method of statistics was used to calculate the mean, standard deviation, minimum and maximum. SPSS 18 software ((SPSS.Ltd, Quarry bay, Hong Kong, PASW-statistics 18) was used to analyze the study. The analysis shows a significant difference between three groups. The study shows that the nickel releases from the recycled stainless steel brackets have the highest at all 4.2 pH except in 120 h. The study result shows that the nickel release from the recycled stainless steel brackets is highest. Metal slot ceramic bracket release significantly less nickel. So, recycled stainless steel brackets should not be used for nickel allergic patients. Metal slot ceramic brackets are advisable.

Comparative evaluation of nickel discharge from brackets in artificial saliva at different time intervals

PubMed Central

Jithesh, C.; Venkataramana, V.; Penumatsa, Narendravarma; Reddy, S. N.; Poornima, K. Y.; Rajasigamani, K.

2015-01-01

Objectives: To determine and compare the potential difference of nickel release from three different orthodontic brackets, in different artificial pH, in different time intervals. Materials and Methods: Twenty-seven samples of three different orthodontic brackets were selected and grouped as 1, 2, and 3. Each group was divided into three subgroups depending on the type of orthodontic brackets, salivary pH and the time interval. The Nickel release from each subgroup were analyzed by using inductively coupled plasma-Atomic Emission Spectrophotometer (Perkin Elmer, Optima 2100 DV, USA) model. Quantitative analysis of nickel was performed three times, and the mean value was used as result. ANOVA (F-test) was used to test the significant difference among the groups at 0.05 level of significance (P < 0.05). The descriptive method of statistics was used to calculate the mean, standard deviation, minimum and maximum. SPSS 18 software ((SPSS.Ltd, Quarry bay, Hong Kong, PASW-statistics 18) was used to analyze the study. Result: The analysis shows a significant difference between three groups. The study shows that the nickel releases from the recycled stainless steel brackets have the highest at all 4.2 pH except in 120 h. Conclusion: The study result shows that the nickel release from the recycled stainless steel brackets is highest. Metal slot ceramic bracket release significantly less nickel. So, recycled stainless steel brackets should not be used for nickel allergic patients. Metal slot ceramic brackets are advisable. PMID:26538924

Galvanic corrosion between orthodontic wires and brackets in fluoride mouthwashes.

PubMed

Schiff, Nicolas; Boinet, Mickaël; Morgon, Laurent; Lissac, Michèle; Dalard, Francis; Grosgogeat, Brigitte

2006-06-01

The aim of this investigation was to determine the influence of fluoride in certain mouthwashes on the risk of corrosion through galvanic coupling of orthodontic wires and brackets. Two titanium alloy wires, nickel-titanium (NiTi) and copper-nickel-titanium (CuNiTi), and the three most commonly used brackets, titanium (Ti), iron-chromium-nickel (FeCrNi) and cobalt-chromium (CoCr), were tested in a reference solution of Fusayama-Meyer artificial saliva and in two commercially available fluoride (250 ppm) mouthwashes, Elmex and Meridol. Corrosion resistance was assessed by inductively coupled plasma-atomic emission spectrometry (ICP-MS), analysis of released metal ions, and a scanning electron microscope (SEM) study of the metal surfaces after immersion of different wire-bracket pairs in the test solutions. The study was completed by an electrochemical analysis. Meridol mouthwash, which contains stannous fluoride, was the solution in which the NiTi wires coupled with the different brackets showed the highest corrosion risk, while in Elmex mouthwash, which contains sodium fluoride, the CuNiTi wires presented the highest corrosion risk. Such corrosion has two consequences: deterioration in mechanical performance of the wire-bracket system, which would negatively affect the final aesthetic result, and the risk of local allergic reactions caused by released Ni ions. The results suggest that mouthwashes should be prescribed according to the orthodontic materials used. A new type of mouthwash for use during orthodontic therapy could be an interesting development in this field.

Ion release from orthodontic brackets in 3 mouthwashes: an in-vitro study.

PubMed

Danaei, Shahla Momeni; Safavi, Afsaneh; Roeinpeikar, S M Mehdi; Oshagh, Morteza; Iranpour, Shiva; Omidkhoda, Maryam; Omidekhoda, Maryam

2011-06-01

Stainless steel orthodontic brackets can release metal ions into the saliva. Fluoridated mouthwashes are often recommended to orthodontic patients to reduce the risk of white-spot lesions around their brackets. However, little information is available regarding the effect of different mouthwashes in ion release of orthodontic brackets. The purpose of this study was to measure the amount of metal ion release from orthodontic brackets when kept in different mouthwashes. One hundred sixty stainless steel brackets (0.022-in, 3M Unitek, Monrovia, Calif) were divided randomly into 4 equal groups and immersed in Oral B (Procter & Gamble, Weybridge, United Kingdom), chlorhexidine (Shahdaru Labratories, Tehran, Iran), and Persica (Poursina Pharmaceutical Laboratories, Tehran, Iran) mouthwashes and distilled deionized water and incubated at 37°C for 45 days. Nickel, chromium, iron, copper, and manganese released from the orthodontic brackets were measured with an inductively coupled plasma spectrometer. For statistical analysis, 1-way analysis of variance (ANOVA) and the Duncan multiple-range tests were used. The results showed that ion release in deionized water was significantly (P <0.05) higher than in the 3 mouthwashes. Higher ion release was found with chlorhexidine compared with the other 2 mouthwashes. There was no significant difference (P >0.05) in nickel, chromium, iron, and copper ion release in the Oral B and Persica mouthwashes. The level of manganese release was significantly different in all 4 groups. If ion release is a concern, Oral B and Persica mouthwashes might be better options than chlorhexidine for orthodontic patients with stainless steel brackets. Copyright © 2011 American Association of Orthodontists. Published by Mosby, Inc. All rights reserved.

Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

NASA Astrophysics Data System (ADS)

Li Lam, Mui; Hafiz Abu Bakar, Muhammad; Lam, Wai Yip; Alias, Afishah; Rahman, Abu Bakar Abd; Anuar Mohamad, Khairul; Uesugi, Katsuhiro

2017-11-01

In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

Homoepitaxial growth of β-Ga{sub 2}O{sub 3} thin films by low pressure chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rafique, Subrina; Han, Lu; Zhao, Hongping, E-mail: hongping.zhao@case.edu

2016-05-02

This paper presents the homoepitaxial growth of phase pure (010) β-Ga{sub 2}O{sub 3} thin films on (010) β-Ga{sub 2}O{sub 3} substrate by low pressure chemical vapor deposition. The effects of growth temperature on the surface morphology and crystal quality of the thin films were systematically investigated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O{sub 2}) as precursors for gallium and oxygen, respectively. The surface morphology and structural properties of the thin films were characterized by atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. Material characterization indicates the growth temperature played anmore » important role in controlling both surface morphology and crystal quality of the β-Ga{sub 2}O{sub 3} thin films. The smallest root-mean-square surface roughness of ∼7 nm was for thin films grown at a temperature of 950 °C, whereas the highest growth rate (∼1.3 μm/h) with a fixed oxygen flow rate was obtained for the epitaxial layers grown at 850 °C.« less

The Effects of In-Office Reconditioning on the Slot Dimensions and Static Frictional Resistance of Stainless Steel Brackets

PubMed Central

Nellore, Chaitanya; Karnati, Praveen Kumar Reddy; Thalapaneni, Ashok Kumar; Myla, Vijay Bhaskar; Ramyasree, Konda; Prasad, Mandava

2016-01-01

Introduction Orthodontists are commonly faced with the decision of what to do with loose brackets, and with inaccurately located brackets that need repositioning during treatment. One solution is to recycle the brackets. The potential effects of reconditioning a bracket are dependent upon many factors which may result in physical changes like alteration in slot tolerance, which may influence sliding mechanics by affecting frictional resistance. Aim To study and compare the dimensional changes in the bracket slot width and depth in reconditioned brackets from unused brackets under scanning electronic microscope and to study and compare any consequent effects on the static frictional resistance of stainless steel brackets after reconditioning and in unused brackets. Materials and Methods Dentarum manufactured 90 stainless steel central incisors edgewise brackets of size 0.22 X 0.030″ inch and 0° tip and 0°angulation were taken. 60 samples for measuring frictional resistance and 30 samples for measuring slot dimensions. Ortho organizers manufactured stainless steel arch wires 0.019 X 0.025″ straight lengths 60 in number were considered for measuring static frictional resistance. Results The mean slot width and depth of new brackets were 0.0251″ and 0.0471″, which exceeded the manufacturers reported nominal size of 0.022″ X 0.030″, by 0.003″ and 0.017″. The reconditioned brackets demonstrated a further increase in mean slot width and depth to 0.028″ and 0.0518″ that is by 0.0035″ and 0.0047″ which is statistically significant (p=0.001, 0.002). The mean static frictional forces of the reconditioned brackets was nearly similar to that of new brackets that is 0.3167N for reconditioned brackets and 0.2613 N for new brackets. Conclusion Although the reconditioning process results in physical changes to bracket structure this does not appear to result in significant effect on ex-vivo static frictional resistance. PMID:26894182

The Effects of In-Office Reconditioning on the Slot Dimensions and Static Frictional Resistance of Stainless Steel Brackets.

PubMed

Iluru, Rohini; Nellore, Chaitanya; Karnati, Praveen Kumar Reddy; Thalapaneni, Ashok Kumar; Myla, Vijay Bhaskar; Ramyasree, Konda; Prasad, Mandava

2016-01-01

Orthodontists are commonly faced with the decision of what to do with loose brackets, and with inaccurately located brackets that need repositioning during treatment. One solution is to recycle the brackets. The potential effects of reconditioning a bracket are dependent upon many factors which may result in physical changes like alteration in slot tolerance, which may influence sliding mechanics by affecting frictional resistance. To study and compare the dimensional changes in the bracket slot width and depth in reconditioned brackets from unused brackets under scanning electronic microscope and to study and compare any consequent effects on the static frictional resistance of stainless steel brackets after reconditioning and in unused brackets. Dentarum manufactured 90 stainless steel central incisors edgewise brackets of size 0.22 X 0.030″ inch and 0° tip and 0°angulation were taken. 60 samples for measuring frictional resistance and 30 samples for measuring slot dimensions. Ortho organizers manufactured stainless steel arch wires 0.019 X 0.025″ straight lengths 60 in number were considered for measuring static frictional resistance. The mean slot width and depth of new brackets were 0.0251″ and 0.0471″, which exceeded the manufacturers reported nominal size of 0.022″ X 0.030″, by 0.003″ and 0.017″. The reconditioned brackets demonstrated a further increase in mean slot width and depth to 0.028″ and 0.0518″ that is by 0.0035″ and 0.0047″ which is statistically significant (p=0.001, 0.002). The mean static frictional forces of the reconditioned brackets was nearly similar to that of new brackets that is 0.3167N for reconditioned brackets and 0.2613 N for new brackets. Although the reconditioning process results in physical changes to bracket structure this does not appear to result in significant effect on ex-vivo static frictional resistance.

Self-ligating versus conventional metallic brackets on Streptococcus mutans retention: A systematic review.

PubMed

Longoni, Juliano N; Lopes, Beatriz M; Freires, Irlan A; Dutra, Kamile L; Franco, Ademir; Paranhos, Luiz R

2017-01-01

The present study aimed to review the literature systematically and assess comparatively whether self-ligating metallic brackets accumulate less Streptococcus mutans biofilm than conventional metallic brackets. The systematic search was performed following PRISMA guidelines and registration in PROSPERO. Seven electronic databases (Google Scholar, LILACS, Open Grey, PubMed, SciELO, ScienceDirect, and Scopus) were consulted until April 2016, with no restriction of language and time of publication. Only randomized clinical studies verifying S. mutans colonization in metallic brackets (self-ligating and conventional) were included. All steps were performed independently by two operators. The search resulted in 546 records obtained from the electronic databases. Additionally, 216 references obtained from the manual search of eligible articles were assessed. Finally, a total of 5 studies were included in the qualitative synthesis. In 1 study, the total bacterial count was not different among self-ligating and conventional brackets, whereas in 2 studies the amount was lower for self-ligating brackets. Regarding the specific count of S. mutans , 2 studies showed less accumulation in self-ligating than in conventional brackets. Based on the limited evidence, self-ligating metallic brackets accumulate less S. mutans than conventional ones. However, these findings must be interpreted in conjunction with particularities individual for each patient - such as hygiene and dietary habits, which are components of the multifactorial environment that enables S. Mutans to proliferate and keep retained in the oral cavity.

Self-ligating versus conventional metallic brackets on Streptococcus mutans retention: A systematic review

PubMed Central

Longoni, Juliano N.; Lopes, Beatriz M.; Freires, Irlan A.; Dutra, Kamile L.; Franco, Ademir; Paranhos, Luiz R.

2017-01-01

Objective: The present study aimed to review the literature systematically and assess comparatively whether self-ligating metallic brackets accumulate less Streptococcus mutans biofilm than conventional metallic brackets. Material and methods: The systematic search was performed following PRISMA guidelines and registration in PROSPERO. Seven electronic databases (Google Scholar, LILACS, Open Grey, PubMed, SciELO, ScienceDirect, and Scopus) were consulted until April 2016, with no restriction of language and time of publication. Only randomized clinical studies verifying S. mutans colonization in metallic brackets (self-ligating and conventional) were included. All steps were performed independently by two operators. Results: The search resulted in 546 records obtained from the electronic databases. Additionally, 216 references obtained from the manual search of eligible articles were assessed. Finally, a total of 5 studies were included in the qualitative synthesis. In 1 study, the total bacterial count was not different among self-ligating and conventional brackets, whereas in 2 studies the amount was lower for self-ligating brackets. Regarding the specific count of S. mutans, 2 studies showed less accumulation in self-ligating than in conventional brackets. Conclusion: Based on the limited evidence, self-ligating metallic brackets accumulate less S. mutans than conventional ones. However, these findings must be interpreted in conjunction with particularities individual for each patient – such as hygiene and dietary habits, which are components of the multifactorial environment that enables S. Mutans to proliferate and keep retained in the oral cavity. PMID:29279684

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

NASA Astrophysics Data System (ADS)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Effect of blood contamination on shear bond strength of orthodontic brackets and disinclusion buttons.

PubMed

Sfondrini, Maria Francesca; Gatti, Sara; Scribante, Andrea

2011-07-01

Our aim was to assess the effect of blood contamination on the shear bonding strength and sites of failure of orthodontic brackets and bondable buttons. We randomly divided 160 bovine permanent mandibular incisors into 8 groups of 20 specimens each. Both orthodontic brackets (Step brackets, Leone, Sesto Fiorentino, Italy) and bondable buttons (Flat orthodontic buttons, Leone, Sesto Fiorentino, Italy) were tested on four different enamel surfaces: dry; contamination with blood before priming; after priming; and before and after priming. Brackets and buttons were bonded to the teeth and subsequently tested using a Instron universal testing machine. Shear bonding strength and the rate of adhesive failures were recorded. Data were analysed using the analysis of variance (ANOVA), Scheffè tests, and the chi-square test. Uncontaminated enamel surfaces showed the highest bonding strengths for both brackets and buttons. When they were contaminated with blood, orthodontic brackets had significantly lower shear strengths than bondable buttons (P=0.0001). There were significant differences in sites of failure among the groups for the various enamel surfaces (P=0.001). Contamination of enamel by blood during bonding lowers the strength of the bond, more so with orthodontic brackets than with bondable buttons. Copyright © 2010 The British Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.

Effects of green tea on the shear bond strength of orthodontic brackets after in-office vital bleaching.

PubMed

Berger, Sandrine Bittencourt; Guiraldo, Ricardo Danil; Lopes, Murilo Baena; Oltramari-Navarro, Paula Vanessa; Fernandes, Thais Maria; Schwertner, Renata de Castro Alves; Ursi, Wagner José Silva

2016-01-01

The application of bleaching agents before placement of resin-bonded fixed appliances significantly, but temporarily, reduces bond strength to tooth structure. Antioxidants have been studied as a means to remove residual oxygen that compromises bonding to bleached enamel. This in vitro study evaluated whether green tea (GT) could restore the shear bond strength between bonded orthodontic brackets and bleached enamel. Six experimental groups were compared: group 1, no bleaching plus bracket bonding (positive control); group 2, bleaching with 35% hydrogen peroxide (HP) plus bracket bonding (negative control); group 3, 35% HP plus 10% sodium ascorbate (SA) plus bracket bonding; group 4, 35% HP plus 10% GT plus bracket bonding; group 5, no bleaching plus 10% SA plus bracket bonding; group 6, no bleaching plus 10% GT plus bracket bonding. Results suggested that GT, like SA, may be beneficial for bracket bonding immediately after bleaching.

Factors affecting the shear bond strength of metal and ceramic brackets bonded to different ceramic surfaces.

PubMed

Abu Alhaija, Elham S J; Abu AlReesh, Issam A; AlWahadni, Ahed M S

2010-06-01

The aims of this study were to evaluate the shear bond strength (SBS) of metal and ceramic brackets bonded to two different all-ceramic crowns, IPS Empress 2 and In-Ceram Alumina, to compare the SBS between hydrofluoric acid (HFA), phosphoric acid etched, and sandblasted, non-etched all-ceramic surfaces. Ninety-six all-ceramic crowns were fabricated resembling a maxillary left first premolar. The crowns were divided into eight groups: (1) metal brackets bonded to sandblasted 9.6 per cent HFA-etched IPS Empress 2 crowns; (2) metal brackets bonded to sandblasted 9.6 per cent HFA-etched In-Ceram crowns; (3) ceramic brackets bonded to sandblasted 9.6 per cent HFA-etched IPS Empress 2 crowns; (4) ceramic brackets bonded to sandblasted 9.6 per cent HFA-etched In-Ceram crowns; (5) metal brackets bonded to sandblasted 37 per cent phosphoric acid-etched IPS Empress 2 crowns; (6) metal brackets bonded to sandblasted 37 per cent phosphoric acid-etched In-Ceram crowns; (7) metal brackets bonded to sandblasted, non-etched IPS Empress 2 crowns; and (8) metal brackets bonded to sandblasted, non-etched In-Ceram crowns. Metal and ceramic orthodontic brackets were bonded using a conventional light polymerizing adhesive resin. An Instron universal testing machine was used to determine the SBS at a crosshead speed of 0.1 mm/minute. Comparison between groups was performed using a univariate general linear model and chi-squared tests. The highest mean SBS was found in group 3 (120.15 +/- 45.05 N) and the lowest in group 8 (57.86 +/- 26.20 N). Of all the variables studied, surface treatment was the only factor that significantly affected SBS (P < 0.001). Acid etch application to sandblasted surfaces significantly increased the SBS in groups 1, 2, 5, and 6. The SBS of metal brackets debonded from groups 1, 3, and 5 were not significantly different from those of groups 2, 4, and 6. All debonded metal brackets revealed a similar pattern of bond failure at the adhesive-restorative interface

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

PubMed Central

Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-01-01

Introduction Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. Aim The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Materials and Methods Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. Results The light absorption values obtained from spectrofluorometeric study were 3300000–3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000–6500000 cps for Group 2

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

PubMed

Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-08-01

Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

A 12 month clinical study of bond failures of recycled versus new stainless steel orthodontic brackets.

PubMed

Cacciafesta, Vittorio; Sfondrini, Maria Francesca; Melsen, Birte; Scribante, Andrea

2004-08-01

The purpose of this prospective longitudinal randomized study was to compare the clinical performance of recycled brackets with that of new stainless steel brackets (Orthos). Twenty patients treated with fixed appliances were included in the investigation. Using a 'split-mouth' design, the dentition of each patient was divided into four quadrants. In 11 randomly selected patients, the maxillary left and mandibular right quadrants were bonded with recycled brackets, and the remaining quadrants with new stainless steel brackets. In the other nine patients the quadrants were inverted. Three hundred and ten stainless steel brackets were examined: 156 were recycled and the remaining 154 were new. All the brackets were bonded with a self-cured resin-modified glass ionomer (GC Fuji Ortho). The number, cause, and date of bracket failures were recorded over 12 months. Statistical analysis was performed by means of a paired t-test, Kaplan-Meier survival estimates, and the log-rank test. No statistically significant differences were found between: (a) the total bond failure rate of recycled and new stainless steel brackets; (b) the upper and lower arches; (c) the anterior and posterior segments. These findings demonstrate that recycling metallic orthodontic brackets can be of benefit to the profession, both economically and ecologically, as long as the orthodontist is aware of the various aspects of the recycling methods, and that patients are informed about the type of bracket that will be used for their treatment.

Galvanic Corrosion of and Ion Release from Various Orthodontic Brackets and Wires in a Fluoride-containing Mouthwash.

PubMed

Tahmasbi, Soodeh; Ghorbani, Mohammad; Masudrad, Mahdis

2015-01-01

Background and aims. This study compared the galvanic corrosion of orthodontic wires and brackets from various manufacturers following exposure to a fluoride mouthwash. Materials and methods. This study was conducted on 24 lower central incisor 0.022" Roth brackets of four different commercially available brands (Dentaurum, American Orthodontics, ORJ, Shinye). These brackets along with stainless steel (SS) or nickel-titanium (NiTi) orthodontic wires (0.016", round) were immersed in Oral-B mouthwash containing 0.05% sodium fluoride for 28 days. The electric potential (EP) difference of each bracket-wire couple was measured with a Saturated Calomel Reference Electrode (Ag/AgCl saturated with KCl) via a voltmeter. The ions released in the electrolyte weremeasured with an atomic absorption spectrometer. All the specimens were assessed under a stereomicroscope and specimens with corrosion were analyzed with scanning electron microscopy (SEM). Data were analyzed using ANOVA. Results. The copper ions released from specimens with NiTi wire were greater than those of samples containing SS wire. ORJ brackets released more Cu ions than other samples. The Ni ions released from Shinye brackets were significantly more than those of other specimens (P < 0.05). Corrosion rate of brackets coupled with NiTi wires was higher than that of brackets coupled with SS wires. Light and electron microscopic observations showed greater corrosion of ORJ brackets. Conclusion. In fluoride mouthwash, Shinye and ORJ brackets exhibited greater corrosion than Dentaurum and American Orthodontics brackets. Stainless steel brackets used with NiTi wires showed greater corrosion and thus caution is recommended when using them.

Galvanic Corrosion of and Ion Release from Various Orthodontic Brackets and Wires in a Fluoride-containing Mouthwash

PubMed Central

Tahmasbi, Soodeh; Ghorbani, Mohammad; Masudrad, Mahdis

2015-01-01

Background and aims. This study compared the galvanic corrosion of orthodontic wires and brackets from various manufacturers following exposure to a fluoride mouthwash. Materials and methods. This study was conducted on 24 lower central incisor 0.022" Roth brackets of four different commercially available brands (Dentaurum, American Orthodontics, ORJ, Shinye). These brackets along with stainless steel (SS) or nickel-titanium (NiTi) orthodontic wires (0.016", round) were immersed in Oral-B mouthwash containing 0.05% sodium fluoride for 28 days. The electric potential (EP) difference of each bracket-wire couple was measured with a Saturated Calomel Reference Electrode (Ag/AgCl saturated with KCl) via a voltmeter. The ions released in the electrolyte weremeasured with an atomic absorption spectrometer. All the specimens were assessed under a stereomicroscope and specimens with corrosion were analyzed with scanning electron microscopy (SEM). Data were analyzed using ANOVA. Results. The copper ions released from specimens with NiTi wire were greater than those of samples containing SS wire. ORJ brackets released more Cu ions than other samples. The Ni ions released from Shinye brackets were significantly more than those of other specimens (P < 0.05). Corrosion rate of brackets coupled with NiTi wires was higher than that of brackets coupled with SS wires. Light and electron microscopic observations showed greater corrosion of ORJ brackets. Conclusion. In fluoride mouthwash, Shinye and ORJ brackets exhibited greater corrosion than Dentaurum and American Orthodontics brackets. Stainless steel brackets used with NiTi wires showed greater corrosion and thus caution is recommended when using them. PMID:26697148

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

NASA Astrophysics Data System (ADS)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.

Effects of gold diffusion on n-type doping of GaAs nanowires.

PubMed

Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

2010-11-10

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

Dependence of Ag/Ga composition ratio in AgGaSe2 thin film

NASA Astrophysics Data System (ADS)

Matsuo, H.; Yoshino, K.; Ikari, T.

2006-09-01

AgGaSe2 thin film was deposited on glass substrates by vacuum evaporation method. The starting material was mixed Ag2Se and Ga2Se3 powders. Ag/Ga ratios of the samples were 1.5, 1.2, 1.0, 0.8, 0.7 and 0.4. The samples were annealed from 100 to 600 °C for 10 min. After these processes, single phase AgGaSe2 thin films could be obtained except Ag/Ga ratio of 0.4 at annealing temperature of 600 °C. Ag-rich samples had large grain. On the other hand, Ga-rich samples had small grain. Furthermore, Ga-rich and Ag-rich samples indicated p- and n-types because of Ag- and/or Ga-vacancy and Se-vacancy, respectively.

Evaluation of Static Friction of Polycrystalline Ceramic Brackets after Conditioning with Different Powers of Er:YAG Laser.

PubMed

Arash, Valiollah; Javanmard, Saeed; Eftekhari, Zeinab; Rahmati-Kamel, Manouchehr; Bahadoram, Mohammad

2015-01-01

This research aimed to reduce the friction between the wire and brackets by Er:YAG laser. To measure the friction between the wires and brackets in 0° and 10° of wire angulations, 40 polycrystalline ceramic brackets (Hubit, South Korea) were divided into 8 study groups and irradiated by 100, 200, and 300 mj/s of Er:YAG laser power. Two groups of brackets were not irradiated. The friction between the wires and brackets was measured with universal testing machine (SANTAM) with a segment of .019 × .025 SS wire pulled out of the slot of bracket. ANOVA and t-test were used for analyzing the results. To evaluate the effect of the laser on surface morphology of the bracket, SEM evaluations were carried out. The mean frictional resistances between the brackets and wires with 0° of angulation by increasing the laser power decreased compared with control group, but, in 10° of angulation, the friction increased regardless of the laser power and was comparable to the friction of nonirradiated brackets. Furthermore, with each laser power, frictional resistance of brackets in 10° of angulation was significantly higher than 0° of angulation. These results were explained by SEM images too.

High temperature superconductor NB3Ga

NASA Technical Reports Server (NTRS)

Vieland, L. J.; Wicklund, A. W.

1973-01-01

The discovery of superconductivity at 20.3 K in the Nb-Ga system by applying chemical vapor deposition (CVD) techniques to the materials preparation problem is reported. Films on ceramic substrates have been grown with superconducting onsets of up to 20.3 K. Critical fields at 4.2 K in excess of 300 kG and alpha's of 1100,000 T-A/sq cm have been obtained. The results confirm that the outstanding properties of Nb-Ga are due to an equilibrium configuration of the system, namely, the stoichiometric A-15 compound Nb3Ga, which is stable at relatively low temperatures. Practical materials preparation problems center on the codeposition of an adjacent Nb5Ga3 phase and the requirement that the deposition temperature be low. Some ternary alloys were also prepared, with part of the Ga replaced by Sn, Sb, Al, or Ge.

A stainless steel bracket for orthodontic application.

PubMed

Oh, Keun-Taek; Choo, Sung-Uk; Kim, Kwang-Mahn; Kim, Kyoung-Nam

2005-06-01

Aesthetics has become an essential element when choosing orthodontic fixed appliances. Most metallic brackets used in orthodontic therapy are made from stainless steel (SS) with the appropriate physical properties and good corrosion resistance, and are available as types 304, 316 and 17-4 PH SS. However, localized corrosion of these materials can frequently occur in the oral environment. This study was undertaken to evaluate the accuracy of sizing, microstructure, hardness, corrosion resistance, frictional resistance and cytotoxicity of commercially available Mini-diamond (S17400), Archist (S30403) and experimentally manufactured SR-50A (S32050) brackets. The size accuracy of Mini-diamond was the highest at all locations except for the external horizontal width of the tie wing (P < 0.05). Micrographs of the Mini-diamond and Archist showed precipitates in the grains and around their boundaries. SR-50A showed the only austenitic phase and the highest polarization resistance of the tested samples. SR-50A also had the highest corrosion resistance [SR-50A, Mini-diamond and Archist were 0.9 x 10(-3), 3.7 x 10(-3), and 7.4 x 10(-3) mm per year (mpy), respectively], in the artificial saliva. The frictional force of SR-50A decreased over time, but that of Mini-diamond and Archist increased. Therefore, SR-50A is believed to have better frictional properties to orthodontic wire than Mini-diamond and Archist. Cytotoxic results showed that the response index of SR-50A was 0/1 (mild), Mini-diamond 1/1 (mild+), and Archist 1/2 (mild+). SR-50A showed greater biocompatibility than either Mini-diamond or Archist. It is concluded that the SR-50A bracket has good frictional property, corrosion resistance and biocompatibility with a lower probability of allergic reaction, compared with conventionally used SS brackets.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

DTIC Science & Technology

2011-10-01

explored the use of in situ deposition of Al2O3 on GaSb grown on InP using molecular beam epitaxy and reported Dit values in the low 1012/cm2eV range near...M. Heyns, M. Caymax, and J. Dekoster, “GaSb mole- cular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide...transmission electron microscopy. Capacitors were made on these films using platinum (Pt) electrode deposited in an e- beam evaporator through a shadow

Adhesives for fixed orthodontic brackets.

PubMed

Mandall, Nicky A; Hickman, Joy; Macfarlane, Tatiana V; Mattick, Rye Cr; Millett, Declan T; Worthington, Helen V

2018-04-09

Bonding of orthodontic brackets to teeth is important to enable effective and efficient treatment with fixed appliances. The problem is bracket failure during treatment which increases operator chairside time and lengthens treatment time. A prolonged treatment is likely to increase the oral health risks of orthodontic treatment with fixed appliances one of which is irreversible enamel decalcification. This is an update of the Cochrane Review first published in 2003. A new full search was conducted on 26 September 2017 but no new studies were identified. We have only updated the search methods section in this new version. The conclusions of this Cochrane Review remain the same. To evaluate the effects of different orthodontic adhesives for bonding. Cochrane Oral Health's Information Specialist searched the following databases: Cochrane Oral Health's Trials Register (to 26 September 2017), the Cochrane Central Register of Controlled Trials (CENTRAL; 2017, Issue 8) in the Cochrane Library (searched 26 September 2017), MEDLINE Ovid (1946 to 26 September 2017), and Embase Ovid (1980 to 26 September 2017). The US National Institutes of Health Ongoing Trials Register (ClinicalTrials.gov) and the World Health Organization International Clinical Trials Registry Platform were searched for ongoing trials. No restrictions were placed on the language or date of publication when searching the electronic databases. Trials were selected if they met the following criteria: randomised controlled trials (RCTs) and controlled clinical trials (CCTs) comparing two different adhesive groups. Participants were patients with fixed orthodontic appliances. The interventions were adhesives that bonded stainless steel brackets to all teeth except the molars. The primary outcome was debond or bracket failure. Data were recorded on decalcification as a secondary outcome, if present. Information regarding methods, participants, interventions, outcome measures and results were extracted in

Singularly Perturbed Lie Bracket Approximation

DOE PAGES

Durr, Hans-Bernd; Krstic, Miroslav; Scheinker, Alexander; ...

2015-03-27

Here, we consider the interconnection of two dynamical systems where one has an input-affine vector field. We show that by employing a singular perturbation analysis and the Lie bracket approximation technique, the stability of the overall system can be analyzed by regarding the stability properties of two reduced, uncoupled systems.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Improvement in adhesion of the brackets to the tooth by sandblasting treatment.

PubMed

Espinar-Escalona, Eduardo; Barrera-Mora, José María; Llamas-Carreras, José María; Solano-Reina, Enrique; Rodríguez, D; Gil, F J

2012-02-01

In oral orthodontic treatments, achievement of a good adhesion between brackets and teeth surfaces is essential. One way to increase adhesion is to apply a surface treatment of teeth facing surfaces through the projection of abrasive particles to produce a surface roughness which improves adhesion of the bracket to the tooth, because of the significantly increased contact between the two surfaces. The effect on adhesion through the use of this technique in different types of brackets, as well as through the use of different blasting particles, however, is yet not well described. In this study we have included three types of brackets which are commonly used in orthodontic therapies (two of them a mesh-type and the third one a micro-milled type) with a contact surface area of 11.16, 8.85 and 6.89 mm(2) respectively. These brackets were used combined with a sandblasting treatment with two different types of abrasive particles, alumina (Al(2)O(3)) and silicon carbide (SiC) and applied to natural teeth in vitro. The abrasive particles used are bio-compatible and usually used in achieving increased roughness for improved adherence in biomedical materials. Sandblasting was performed at 2 bars for 2 s; three particle sizes were used: 80, 200 and 600 μm. Non-blasted samples were used as control. Each of the pieces were cemented to natural teeth with a self-curing composite. Samples were stored in physiologic serum at 5°C temperature. Tensile tests were performed with a universal testing machine. Brackets treated with sandblasted particles were measured to have an increased adhesion as compared to the control sample. The highest bond strength was measured for samples sandblasted with alumina particles of 80 and 200 μm combined with micro-milled brackets. The recorded stresses did not exceed the tensile strength of tooth enamel.

Comparative assessment of different recycling methods of orthodontic brackets for clinical use.

PubMed

de Oliveira Correia, Ayla M; de Souza Matos, Felipe; Pilli Jóias, Renata; de Mello Rode, Sigmar; Cesar, Paulo F; Paranhos, Luiz R

2017-06-01

This study aimed to assess bond strength of the resin/bracket interface, under in-vitro shear stress, of metal brackets recycled by different clinical protocols. Sixty stainless steel orthodontic brackets were bonded on acrylic resin. The Transbond XT™ resin was applied at the base of the bracket aided by a matrix, obtaining 1 mm of thickness, and photoactivated with a LED device (40 s; 500 mW/cm2). Samples were randomly divided into four groups (N.=15) according to the reconditioning/recycling protocol: aluminum oxide (AO) 90 µm; hydrofluoric acid 60 s (HA60); hydrofluoric acid 120 s (HA120); hydrofluoric acid 60 s + silane (HA60S). After recycling, the resin was applied at the base of the bracket for shear testing in a universal testing machine (0.5 mm/min). After reconditioning/recycling, the surfaces were analyzed by Scanning Electron Microscopy. Data obtained after the shear test were subjected to ANOVA and Tukey's test (P<0.05). The AO group presented higher values of shear bond strength compared to the other reconditioning/recycling protocols (P<0.05). The HA120 and HA60S groups presented statistically similar results, but HA120 presented strength below the recommended limit. The recycling technique by aluminum oxide sandblasting was more effective for reconditioning orthodontic brackets when compared to the other protocols. The reconditioning technique with 10% hydrofluoric acid followed by the application of silane bonding agent may be used as an alternative protocol.

Evaluation of a new nano-filled restorative material for bonding orthodontic brackets.

PubMed

Bishara, Samir E; Ajlouni, Raed; Soliman, Manal M; Oonsombat, Charuphan; Laffoon, John F; Warren, John

2007-01-01

To compare the shear bond strength of a nano-hybrid restorative material, Grandio (Voco, Cuxhaven, Germany), to that of a traditional adhesive material (Transbond XT; 3M Unitek, Monrovia, CA, USA) when bonding orthodontic brackets. Forty teeth were randomly divided into 2 groups: 20 teeth were bonded with the Transbond adhesive system and the other 20 teeth with the Grandio restorative system, following manufacturer's instructions. Student t test was used to compare the shear bond strength of the 2 systems. Significance was predetermined at P 5 .05. The t test comparisons (t = 0.55) of the shear bond strength between the 2 adhesives indicated the absence of a significant (P = .585) difference. The mean shear bond strength for Grandio was 4.1 +/- 2.6 MPa and that for Transbond XT was 4.6 +/- 3.2 MPa. During debonding, 3 of 20 brackets (15%) bonded with Grandio failed without registering any force on the Zwick recording. None of the brackets bonded with Transbond XT had a similar failure mode. The newly introduced nano-filled composite materials can potentially be used to bond orthodontic brackets to teeth if its consistency can be more flowable to readily adhere to the bracket base.

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin

2016-04-15

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclinedmore » angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.« less

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed