Are the 3,800-Myr-old Isua objects microfossils, limonite-stained fluid inclusions, or neither?

USGS Publications Warehouse

Roedder, E.

1981-01-01

Bridgwater et al.1 issued a 'cautionary note' concerning several reports published by Pflug and co-workers2-5 describing objects called yeast-like microfossils (Isuasphaera isua Pflug) from a metamorphosed quartzite of the 3,800-Myr-old Isua supracrustal belt of south-west Greenland; Bridgwater et al. believe that the objects described by Pflug et al. 2-5 are 'indistinguishable from limonite-stained fluid inclusions' and hence are non-biogenic. I show here that the objects are neither limonite-stained fluid inclusions nor microfossils, but are limonite-stained cavities from the otherwise complete dissolution by weathering of ferruginous dolomite grains in these rocks. Several supporting arguments presented by both sides are believed to be invalid, and others are ambiguous. In view of the extensive research on the earliest life forms, and then significance to evolution, to early geochemical cycles and to the origin of the atmosphere and some ore deposits, the exact nature of the Isua objects, and particularly the validity of the evidence either for or against a biological origin, are of considerable importance. A careful evaluation of the evidence from Isua is particularly pertinent, as bona fide Precambrian fossils are also found in chemically similar (but much younger) silica-rich environments. ?? 1981 Nature Publishing Group.

Tourmaline in the 3.7-3.8 Ga Isua Supracrustal Belt, West Greenland - A window to Boron Concentrations in the Eoarchean Eon

NASA Astrophysics Data System (ADS)

Grew, E. S.; Dymek, R. F.; De Hoog, J. C.; Harley, S. L.; Hazen, R. M.; Yates, M. G.

2013-12-01

The distribution and mineralogical context of trace elements in Earth's oldest rocks provide insights on Earth's accretion, differentiation, and primordial evolution. One example is boron, which is highly concentrated in Earth's crust and oceans relative to primitive mantle, and, thus the amount of boron on Earth's surface should increase with increasing volume of crust. The earliest B mineral reported in the geological record is metamorphic tourmaline in the Isua Supracrustal Belt, where its abundance belies the notion of there being less boron in the Eoarchean than in more recent time. Chaussidon & Appel (1997, Chem. Geol., 136, 171-180) reported δ11B = --17.3 to --25.0‰ in tourmaline in Isua metachert ("conglomerate"), and δ11B = --12.6 to +5.8 ‰ on tourmaline in Isua metamorphosed mafic volcaniclastics. The large range in the latter rocks was attributed to fractionation during hydrothermal reworking, whereas the more negative values in the metacherts suggested metamorphic tourmaline formed from breakdown of clays with an average δ11B calculated to be about -8 × 7‰ deposited in an ocean having δ11B = +27×11‰, compared to +40 ‰ today, consistent with δ11B = +28‰ calculated from the Chaussidon & Albarède (1992, EPSL, 108, 229-241) model relating increase in sea-water δ11B to proportion of B extracted from Earth's mantle into the oceans and crust. This estimate of Eoarchean seawater δ11B is consistent with fractionation associated with illitization of smectite formed in a marine environment (estimated to be about --35‰) and with crystallization of metamorphic tourmaline from intergranular fluid having the same δ11B as the host metachert (another --2‰ at 500 °C based on tourmaline-water fractionation from Meyer et al. 2008, Contrib. Mineral. Petrol., 156, 259-267). However, this scenario does not adequately explain three rock types in the Isua supracrustals: (1) a tourmaline-quartz lens with ~50% modal tourmaline; (2) a dolomite

Sm-Nd dating of Fig Tree clay minerals of the Barberton greenstone belt, South Africa.

PubMed

Toulkeridis, T; Goldstein, S L; Clauer, N; Kroner, A; Lowe, D R

1994-03-01

Sm-Nd isotopic data from carbonate-derived clay minerals of the 3.22-3.25 Ga Fig Tree Group, Barberton greenstone belt, South Africa, form a linear array corresponding to an age of 3102 +/- 64 Ma, making these minerals the oldest dated clays on Earth. The obtained age is 120-160 m.y. younger than the depositional age determined by zircon geochronology. Nd model ages for the clays range from approximately 3.39 to 3.44 Ga and almost cover the age variation of the Barberton greenstone belt rocks, consistent with independent evidence that the clay minerals are derived from material of the belt. The combined isotopic and mineralogical data provide evidence for a cryptic thermal overprint in the sediments of the belt. However, the highest temperature reached by the samples since the time of clay-mineral formation was <300 degrees C, lower than virtually any known early Archean supracrustal sequence.

Sm-Nd dating of Fig Tree clay minerals of the Barberton greenstone belt, South Africa

NASA Technical Reports Server (NTRS)

Toulkeridis, T.; Goldstein, S. L.; Clauer, N.; Kroner, A.; Lowe, D. R.

1994-01-01

Sm-Nd isotopic data from carbonate-derived clay minerals of the 3.22-3.25 Ga Fig Tree Group, Barberton greenstone belt, South Africa, form a linear array corresponding to an age of 3102 +/- 64 Ma, making these minerals the oldest dated clays on Earth. The obtained age is 120-160 m.y. younger than the depositional age determined by zircon geochronology. Nd model ages for the clays range from approximately 3.39 to 3.44 Ga and almost cover the age variation of the Barberton greenstone belt rocks, consistent with independent evidence that the clay minerals are derived from material of the belt. The combined isotopic and mineralogical data provide evidence for a cryptic thermal overprint in the sediments of the belt. However, the highest temperature reached by the samples since the time of clay-mineral formation was <300 degrees C, lower than virtually any known early Archean supracrustal sequence.

Is the Cameron River greenstone belt allochthonous?

NASA Technical Reports Server (NTRS)

Kusky, T. M.

1986-01-01

Many tectonic models for the Slave Province, N.W.T., Canada, and for Archean granite - greenstone terranes in general, are implicitly dependent on the assumption that greenstone belt lithologies rest unconformably upon older gneissic basement. Other models require originally large separations between gneissic terranes and greenstone belts. A key question relating to the tectonics of greenstone belts is therefore the original spatial relationship between the volcanic assemblages and presumed-basement gneisses, and how this relationship has been modified by subsequent deformation. What remains unclear in these examples is the significance of the so-called later faulting of the greenstone - gneiss contacts. Where unconformities between gneisses and overlying sediments are indisputable, such as at Point Lake, the significance of faults which occur below the base of the volcanic succession also needs to be evaluated. As part of an on-going investigation aimed at answering these and other questions, the extremely well-exposed Cameron River Greenstone Belt and the Sleepy Dragon Metamorphic Complex in the vicinity of Webb Lake and Sleepy Dragon Lake was mapped.

A Sm-Nd and Pb isotope study of Archaean greenstone belts in the southern Kaapvaal Craton, South Africa

NASA Technical Reports Server (NTRS)

Wilson, A. H.; Carlson, R. W.

1989-01-01

An Sm-Nd and Pb study on a wide variety of lithologies in Archaean greenstone belt fragments in the southern Kaapvaal Craton reveals a complex petrogenetic history. The fragments are important because they represent a 350 km transect through the craton south of Barberton to its southern margin. The Commondale greenstone belt yields a precise Sm-Nd age of 3334 + or - 18 Ma on an exceptionally well preserved peridotite suite of komatiitic affinity. The wide range of Sm/Nd from 0.6 to 1.0 is attributed to the unusual occurrence of orthopyroxene in the spinifex-bearing rocks. A considerably younger age of about 3.2 Ga is suggested for the Nondweni greenstone belt close to the southern margin of the craton on the basis of separate Sm-Nd isochrons on individual lithologies ranging from komatiite, through komatiitic basalt and basalt to felsic volcanic rocks. On the basis of the present study the greenstone belts appear to have been emplaced at progressively younger ages toward the southern margin of the craton.

Average sedimentary rock rare Earth element patterns and crustal evolution: Some observations and implications from the 3800 Ma ISUA supracrustal belt, West Greenland

NASA Technical Reports Server (NTRS)

Dymek, R. F.; Boak, J. L.; Gromet, L. P.

1983-01-01

Rare earth element (REE) data is given on a set of clastic metasediments from the 3800 Ma Isua Supracrustal belt, West Greenland. Each of two units from the same sedimentary sequence has a distinctive REE pattern, but the average of these rocks bears a very strong resemblance to the REE pattern for the North American Shale Composite (NASC), and departs considerably from previous estimates of REE patterns in Archaean sediments. The possibility that the source area for the Isua sediments resembled that of the NASC is regarded as highly unlikely. However, REE patterns like that in the NASC may be produced by sedimentary recycling of material yielding patterns such as are found at Isua. The results lead to the following tentative conclusions: (1) The REE patterns for Isua Seq. B MBG indicate the existence of crustal materials with fractionated REE and negative Eu anomalies at 3800 Ma, (2) The average Seq. B REE pattern resembles that of the North American Shale Composite (NASC), (3) If the Seq. B average is truly representative of its crustal sources, then this early crust could have been extensively differentiated. In this regard, a proper understanding of the NASC pattern, and its relationship to post-Archaean crustal REE reservoirs, is essential, (4) The Isua results may represent a local effect.

Geophysical characteristics and crustal structure of greenstone terranes: Canadian Shield

NASA Technical Reports Server (NTRS)

Thomas, M. D.; Losier, L.; Thurston, P. C.; Gupta, V. K.; Gibb, R. A.; Grieve, R. A. F.

1986-01-01

Geophysical studies in the Canadian Shield have provided some insights into the tectonic setting of greenstone belts. Greenstone belts are not rooted in deep crustal structures. Geophysical techniques consistently indicate that greenstones are restricted to the uppermost 10 km or so of crust and are underlain by geophysically normal crust. Gravity models suggest that granitic elements are similarly restricted, although magnetic modelling suggests possible downward extension to the intermediate discontinuity around approx. 18 km. Seismic evidence demonstrates that steeply-dipping structure, which can be associated with the belts in the upper crust, is not present in the lower crust. Horizontal intermediate discontinuities mapped under adjacent greenstone and granitic components are not noticeably disrupted in the boundary zone. Geophysical evidence points to the presence of discontinuities between greenhouse-granite and adjacent metasedimentary erranes. Measured stratigraphic thicknesses of greenstone belts are often twice or more the vertical thicknesses determined from gravity modelling. Explantations advanced for the discrepancy include stratigraphy repeated by thrust faulting and/or listric normal faulting, mechanisms which are consistent with certain aspects of conceptual models of greenstone development. Where repetition is not a factor the gravity evidence points to removal of the root zones of greenstone belts. For one region, this has been attributed to magmatic stopping during resurgent caldera activity.

Spatial greenstone-gneiss relationships: Evidence from mafic-ultramafic xenolith distribution patterns

NASA Technical Reports Server (NTRS)

Glikson, A. Y.

1986-01-01

The distribution patterns of mafic-ultramafic xenoliths within Archaean orthogneiss terrain furnish an essential key for the elucidation of granite-greenstone relations. Most greenstone belts constitute mega-xenoliths rather than primary basin structures. Transition along strike and across strike between stratigraphically low greenstone sequences and xenolith chains demonstrate their contemporaneity. These terrains represent least deformed cratonic islands within an otherwise penetratively foliated deformed gneiss-greenstone crust. Whereas early greenstone sequences are invariably intruded by tonalitic/trondhjemitic/granodioritic gneisses, stratigraphically higher successions may locally overlap older gneiss terrains and their entrained xenoliths unconformably. The contiguity of xenolith patterns suggests their derivation as relics of regional mafic-ultramafic volcanic crustal units and places limits on horizontal movements between individual crustal blocks.

The rock components and structures of Archean greenstone belts: An overview

NASA Technical Reports Server (NTRS)

Lowe, D. R.; Byerly, G. R.

1986-01-01

Knowledge of the character and evolution of the Earth's early crust is derived from the studies of the rocks and structures in Archean greenstone belts. Ability to resolve the petrologic, sedimentological and structural histories of greenstone belts, however, hinges first on an ability to apply the concepts and procedures of classical stratigraphy. Unfortunately, early Precambrian greenstone terrains present particular problems to stratigraphic analysis. Many current controversies of greenstone belt petrogenesis, sedimentology, tectonics and evolution arise more from an inability to develop a clear stratigraphic picture of the belts than from ambiguities in interpretation. Four particular stratigraphic problems that afflict studies of Archean greenstone belts are considered: determination of facing directions, correlation of lithologic units, identification of primary lithologies and discrimination of stratigraphic versus structural contacts.

187Os-enriched domain in an Archean mantle plume: evidence from 2.8 Ga komatiites of the Kostomuksha greenstone belt, NW Baltic Shield

NASA Astrophysics Data System (ADS)

Puchtel, Igor S.; Brügmann, Gerhard E.; Hofmann, Albrecht W.

2001-04-01

The Re-Os data on Archean komatiites from the Kostomuksha greenstone belt in the Baltic Shield are presented. This greenstone belt has been previously interpreted to represent a former oceanic plateau formed by the emplacement of an ancient plume head [Puchtel et al., Earth Planet. Sci. Lett. 155 (1998) 57-74]. Samples of flowtop breccia, spinifex-textured and cumulate komatiites and a chromite separate, all collected from the core of a 300 m deep diamond drill hole, yielded a Re-Os isochron with an age of 2795±40 Ma and an initial 187Os/188Os of 0.1117±0.0011 (γ187Os=+3.6±1.0). The high positive γ187Os(T) implies that the komatiites were derived from a mantle source with a time-integrated suprachondritic Re/Os ratio. Recycling of oceanic lithosphere to produce the enriched 187Os isotope signature is considered unlikely, as 15-25% crustal component is required to be incorporated into the plume source as early as 3.5-4.3 Ga. Such a substantial proportion of mafic material in the source would likely destroy the major and trace element characteristics of the komatiites. Our tentative interpretation is that the 187Os-enrichment in the Kostomuksha plume represents an outer core signature. If confirmed by the ongoing Pt-Os isotope studies, the results would provide evidence for the existence of whole-mantle convection in the late Archean, and might place constraints on the timing of core differentiation in the early Earth.

Reconstructed Oceanic Sedimentary Sequence in the Cape Three Points Area, Southern Axim-Konongo (Ashanti) Greenstone Belt in the Paleoproterozoic Birimian of Ghana.

NASA Astrophysics Data System (ADS)

Kiyokawa, S.; Ito, T.; Frank, N. K.; George, T. M.

2014-12-01

The Birimian greenstone belt likely formed through collision between the West African and Congo Cratons ~2.2 Ga. Accreted greenstone belts that formed through collision especially during the Palaeoproterozoic are usually not only good targets for preservation of oceanic sedimentary sequences but also greatly help understand the nature of the Paleoproterozoic deeper oceanic environments. In this study, we focused on the coastal area around Cape Three Points at the southernmost part of the Axim-Konongo (Ashanti) greenstone belt in Ghana where excellently preserved Paleoprotrozoic deeper oceanic sedimentary sequences extensively outcrop. The Birimian greenstone belt in both the Birimian rock (partly Sefwi Group) and Ashanti belts are separated from the Tarkwaian Group which is a paleoplacer deposit (Perrouty et al., 2012). The Birimian rock was identified as volcanic rich greenstone belt; Kumasi Group is foreland basin with shale and sandstone, quartzite and turbidite derived from 2.1 Ga granite in the Birimian; Tarkwaian Group is composed of coarse detrital sedimentary rocks deposited along a strike-slip fault in the Birimian. In the eastern part of the Cape Three Point area, over 4km long of volcanic-sedimentary sequence outcrops and is affected by greenschist facies metamorphism. Four demarcated zones along the coast as Kutike, Atwepo, Kwtakor and Akodaa zones. The boundaries of each zone were not observed, but each zone displays a well preserved and continuous sedimentary sequence. Structurally, this region is west vergent structure and younging direction to the East. Kutike zone exhibits synform structure with S0 younging direction. Provisional stratigraphic columns in all the zones total about 500m thick. Kutike, Atwepo zones (> 200m thick) have coarsening upward characteristics from black shale to bedded volcanic sandstone. Kwtakor zone (> 150m) is the thickest volcaniclastic sequence and has fining upward sections. Akodaa zone (> 150m) consists of finer bed of

Archean greenstone-tonalite duality: Thermochemical mantle convection models or plate tectonics in the early Earth global dynamics?

NASA Astrophysics Data System (ADS)

Kerrich, Robert; Polat, Ali

2006-03-01

Mantle convection and plate tectonics are one system, because oceanic plates are cold upper thermal boundary layers of the convection cells. As a corollary, Phanerozoic-style of plate tectonics or more likely a different version of it (i.e. a larger number of slowly moving plates, or similar number of faster plates) is expected to have operated in the hotter, vigorously convecting early Earth. Despite the recent advances in understanding the origin of Archean greenstone-granitoid terranes, the question regarding the operation of plate tectonics in the early Earth remains still controversial. Numerical model outputs for the Archean Earth range from predominantly shallow to flat subduction between 4.0 and 2.5 Ga and well-established steep subduction since 2.5 Ga [Abbott, D., Drury, R., Smith, W.H.F., 1994. Flat to steep transition in subduction style. Geology 22, 937-940], to no plate tectonics but rather foundering of 1000 km sectors of basaltic crust, then "resurfaced" by upper asthenospheric mantle basaltic melts that generate the observed duality of basalts and tonalities [van Thienen, P., van den Berg, A.P., Vlaar, N.J., 2004a. Production and recycling of oceanic crust in the early earth. Tectonophysics 386, 41-65; van Thienen, P., Van den Berg, A.P., Vlaar, N.J., 2004b. On the formation of continental silicic melts in thermochemical mantle convection models: implications for early Earth. Tectonophysics 394, 111-124]. These model outputs can be tested against the geological record. Greenstone belt volcanics are composites of komatiite-basalt plateau sequences erupted from deep mantle plumes and bimodal basalt-dacite sequences having the geochemical signatures of convergent margins; i.e. horizontally imbricated plateau and island arc crust. Greenstone belts from 3.8 to 2.5 Ga include volcanic types reported from Cenozoic convergent margins including: boninites; arc picrites; and the association of adakites-Mg andesites- and Nb-enriched basalts. Archean cratons

Workshop on the Tectonic Evolution of Greenstone Belts

NASA Technical Reports Server (NTRS)

1986-01-01

The Workshop on the Tectonic Evolution of Greenstone Belts, which is part of the Universities Space Research Association, Lunar and Planetary Institute, of Houston, Texas, met there on Jan. 16-18, 1986. A number of plate tectonic hypotheses have been proposed to explain the origin of Archean and Phanerozoic greenstone/ophiolite terranes. These hypotheses are explored in the abstracts.

Sedimentological and stratigraphic evolution of the southern part of the Barberton greenstone belt: A case of changing provenance and stability

NASA Technical Reports Server (NTRS)

Lowe, D. R.; Byerly, G. R.

1986-01-01

The sedimentological and stratigraphic evolution of the 3.5 to 3.3 Ga Barberton Greenstone Belt can be divided into three principal stages: (1) the volcanic platform stage during which at least 8 km of mafic and ultramafic volcanic rocks, minor felsic volcanic units, and thin sedimentary layers (Onverwacht Group) accumulated under generally anorogenic conditions; (2) a transitional stage of developing instability during which widespread dacitic volcanism and associated pyroclastic and volcaniclastic sedimentation was punctuated by the deposition of terrigenous debris derived by uplift and shallow erosion of the belt itself (Fig Tree Group); (3) an orogenic stage involving cessation of active volcanism, extensive thrust faulting, and widespread deposition of clastic sediments representing deep erosion of the greenstone belt sequence as well as sources outside of the belt (Moodies Group).

Greenstone belts: Their boundaries, surrounding rock terrains and interrelationships

NASA Technical Reports Server (NTRS)

Percival, J. A.; Card, K. D.

1986-01-01

Greenstone belts are an important part of the fragmented record of crustal evolution, representing samples of the magmatic activity that formed much of the Earth's crust. Most belts developed rapidly, in less than 100 Ma, leaving large gaps in the geological record. Surrounding terrains provide information on the context of greenstone belts. The effects of tectonic setting, structural geometry and evolution, associated plutonic activity and sedimentation are discussed.

Hot spot abundance, ridge subduction and the evolution of greenstone belts

NASA Technical Reports Server (NTRS)

Abbott, D.; Hoffman, S.

1986-01-01

A number of plate tectonic hypotheses have been proposed to explain the origin of Archaean and Phanerozoic greenstone/ophiolite terranes. In these models, ophiolites or greenstone belts represent the remnants of one or more of the following: island arcs, rifted continental margins, oceanic crustal sections, and hot spot volcanic products. If plate tectonics has been active since the creation of the Earth, it is logical to suppose that the same types of tectonic processes which form present day ophiolites also formed Archaean greenstone belts. However, the relative importance of the various tectonic processes may well have been different and are discussed.

Archean greenstone belt magmatism and the continental growth-mantle evolution connection: constraints from Th-U-Nb-LREE systematics of the 2.7 Ga Wawa subprovince, Superior Province, Canada

NASA Astrophysics Data System (ADS)

Polat, Ali; Kerrich, Robert

2000-01-01

An extensive database, including Th-;U-Nb-REE systematics, for diverse magmatic and sedimentary lithologies of 2.7 Ga Wawa greenstone belts provide new constraints on the mechanism of crustal growth in the southern Superior Province, and controls on its composition. The greenstone belts are characterized by collages of oceanic plateaus, oceanic island arcs, and trench turbidites; these lithotectonic fragments were tectonically assembled in a large subduction-accretion complex. Following juxtaposition, these diverse lithologies were collectively intruded by syn-kinematic TTG (tonalite-trondhjemite-granodiorite) plutons and ultramafic to felsic dykes and sills, with subduction zone geochemical signatures. Intra-oceanic basalts are characterized by near-flat REE patterns, and Nb/U and Nb/Th ratios generally greater than primitive mantle values, consistent with positive ɛNd values. They are associated with komatiites, the association being interpreted as an ocean plateau sequence erupted from a mantle plume. Bimodal arc volcanic sequences, trench turbidites, and contemporaneous TTG suites are characterized by fractionated REE, with Nb/U and Nb/Th ratios less than primitive mantle values. Mixing hyperbolae between oceanic plateau and magmatic arc sequences pass through the estimated composition of bulk continental crust, suggesting that crustal growth in the late Archean was by tectonic, sedimentary, and chemical mixing of oceanic plateau and arc sequences at convergent plate boundaries. Mixing calculations suggest that oceanic plateau and subduction zone components in the Wawa continental crust are represented by 6-12% and 88-94%, respectively. High Nb/U and Nb/Th ratios of plateau tholeiitic basalts are interpreted as a complementary reservoir to arc magmatism (low Nb/U and Nb/Th), hundreds of millions of years prior to recycling of oceanic lithosphere through a subduction zone (high Nb/U, Nb/Th), and its incorporation into a mantle plume from which 2.7 Ga plateau

Mesoarchean BIF and iron ores of the Badampahar greenstone belt, Iron Ore Group, East Indian Shield

NASA Astrophysics Data System (ADS)

Ghosh, Rupam; Baidya, Tapan Kumar

2017-12-01

Banded iron formations (BIFs) are chemically precipitated sedimentary rock characterized by alternating Fe-rich and Si-rich bands. The origin of BIF has remained controversial despite years of diligent research. Most models proposed for the BIF origin are based on the observations of well-preserved Neoarchean to Paleoproterozoic BIFs. The present paper is focused on the origin of Mesoarchean BIFs present in the Badampahar greenstone belt (3.3-3.1 Ga), East Indian Shield. Here, BIF is interlayered with metavolcanic rocks, quartzite, phyllite and chert representing a typical greenstone sequence. Geochemical and sedimentological evidence suggest deposition of BIF below the wave base as part of a back-arc basin with insignificant detrital input. Interaction of seawater and volcanogenic high temperature hydrothermal fluids, generated from back-arc spreading centre, supplied metals for BIF deposition. Distinctly negative Ce anomalies in some lower BIF horizons indicate Fe2+ oxidation in an oxygenated hydrosphere and derivation of free oxygen from microbial photosynthesis. Subsequent stages of deformation, metamorphism, hydrothermal and supergene processes after deposition led to the formation of the iron ore bodies at present.

Metallogeny of precious and base metal mineralization in the Murchison Greenstone Belt, South Africa: indications from U-Pb and Pb-Pb geochronology

NASA Astrophysics Data System (ADS)

Jaguin, J.; Poujol, M.; Boulvais, P.; Robb, L. J.; Paquette, J. L.

2012-10-01

The 3.09 to 2.97 Ga Murchison Greenstone Belt is an important metallotect in the northern Kaapvaal Craton (South Africa), hosting several precious and base metal deposits. Central to the metallotect is the Antimony Line, striking ENE for over 35 km, which hosts a series of structurally controlled Sb-Au deposits. To the north of the Antimony Line, hosted within felsic volcanic rocks, is the Copper-Zinc Line where a series of small, ca. 2.97 Ga Cu-Zn volcanogenic massive sulfide (VMS)-type deposits occur. New data are provided for the Malati Pump gold mine, located at the eastern end of the Antimony Line. Crystallizations of a granodiorite in the Malati Pump Mine and of the Baderoukwe granodiorite are dated at 2,964 ± 7 and 2,970 ± 7 Ma, respectively (zircon U-Pb), while pyrite associated with gold mineralization yielded a Pb-Pb age of 2,967 ± 48 Ma. Therefore, granodiorite emplacement, sulfide mineral deposition and gold mineralization all happened at ca. 2.97 Ga. It is, thus, suggested that the major styles of orogenic Au-Sb and the Cu-Zn VMS mineralization in the Murchison Greenstone Belt are contemporaneous and that the formation of meso- to epithermal Au-Sb mineralization at fairly shallow levels was accompanied by submarine extrusion of felsic volcanic rocks to form associated Cu-Zn VMS mineralization.

Workshop on Techtonic Evolution of Greenstone Belts

NASA Technical Reports Server (NTRS)

Dewit, M. J. (Editor); Ashwal, Lewis D. (Editor)

1986-01-01

Topics addressed include: greenstone belt externalities; boundaries; rock terranes; synthesis and destiny; tectonic evolution; rock components and structure; sedimentology; stratigraphy; volcanism; metamorphism; and geophysics.

Evidence of water degassing during emplacement and crystallization of 2.7 Ga komatiites from the Agnew-Wiluna greenstone belt, Western Australia

NASA Astrophysics Data System (ADS)

Fiorentini, M. L.; Beresford, S. W.; Stone, W. E.; Deloule, E.

2012-07-01

Komatiites are ancient volcanic rocks, mostly over 2.7 billion years old, which formed through >30% partial melting of the mantle. This study addresses the crucial relationship between volcanology and physical manifestation of primary magmatic water content in komatiites of the Agnew-Wiluna greenstone belt, Western Australia, and documents the degassing processes that occurred during the emplacement and crystallization of these magmas. The Agnew-Wiluna greenstone belt of Western Australia contains three co-genetic komatiite units that (1) display laterally variable volcanological features, including thick cumulates and spinifex-textured units, and (2) were emplaced as both lava flows and intrusions at various locations. Komatiite sills up to 500 m thick contain widespread occurrence of hydromagmatic amphibole in orthocumulate- and mesocumulate-textured rocks, which contain ca. 40-50 wt% MgO and <3 wt% TiO2. Conversely, komatiite flows do not contain any volatile-bearing mineral phases: ~150-m-thick flows only contain vesicles, amygdales and segregation structures, whereas <5-10-m-thick flows lack any textural and petrographic evidence of primary volatile contents. The main results of this study demonstrate that komatiites from the Agnew-Wiluna greenstone belt, irrespective of their initial water content, have degassed upon emplacement, flow and crystallization. More importantly, data show that komatiite flows most likely degassed more water than komatiite intrusions. Komatiite degassing may have indirectly influenced numerous physical and chemical parameters of the water from the primordial oceans and hence indirectly contributed to the creation of a complex zonation at the interface between water and seafloor.

The Pioneer Ultramafic Complex of the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Cooper, M. R.; Byerly, G. R.; Lowe, D. R.; Thompson, M. E.

2005-12-01

The 3.55-3.22 Ga Barberton Greenstone Belt is an approximately 100km x 30km northeast trending, isoclinally folded, volcanic and sedimentary succession surrounded by intrusive granitic rocks. It is perhaps Earth's best preserved mid-Archean supracrustal sequence and also among the most magnesian, making it an ideal location for studying compositionally distinct rocks of the Archean, such as komatiites. The Pioneer Ultramafic Complex has been interpreted as a komatiitic intrusion but we argue that it is a sequence of layered komatiitic flows and interbedded tuffs correlative with other komatiitic extrusive units of the 3.29 Ga Weltevreden Formation, the uppermost formation of the Onverwacht Group. The Pioneer Ultramafic Complex contains at least 900m of section in the study area, including at least 5 flow sets, with individual flows up to 100 m thick, sections of tuff up to 100m thick and additional thinner tuff units. The base of the sequence is in fault contact with the Sawmill Ultramafic Complex, which is similar to and perhaps correlative with the Pioneer. The top of the sequence is bounded by the Moodies Fault and slightly younger sedimentary rocks of the Fig Tree and Moodies Groups. Typical flows of the Pioneer have highly serpentinized olivine-rich cumulate bases, fresh olivine bearing peridotitic lithologies in central portions, and increasing pyroxene content, pyroxene size, and elongation of grains toward the flow tops. Three of the five flows are capped with random and/or oriented spinifex layers. The tuffs within this and other layered ultramafic complexes of the Barberton Greenstone Belt are mostly fine grained, slaty serpentinites that were previously interpreted as bedding horizontal zones of shearing. However, rare preservation of angular and vesicular lapilli, and more commonly cross-stratification in finer grained layers, provide strong evidence that these layers represent tuffs. High chromium and other trace element contents suggest they are

The origin of carbonaceous matter in pre-3.0 Ga greenstone terrains: A review and new evidence from the 3.42 Ga Buck Reef Chert

NASA Astrophysics Data System (ADS)

Tice, Michael M.; Lowe, Donald R.

2006-06-01

The geological record of carbonaceous matter from at least 3.5 Ga to the end of the Precambrian is fundamentally continuous in terms of carbonaceous matter structure, composition, environments of deposition/preservation, and abundance in host rocks. No abiotic processes are currently known to be capable of producing continuity in all four of these properties. Although this broad view of the geological record does not prove that life had arisen by 3.5 Ga, the end of the early Archean, it suggests a working hypothesis: most if not all carbonaceous matter present in rocks older than 3.0 Ga was produced by living organisms. This hypothesis must be tested by studies of specific early geological units designed to explore the form, distribution, and origin of enclosed carbonaceous matter. The carbonaceous, environmentally diverse 3416 Ma Buck Reef Chert (BRC) of the Barberton greenstone belt, South Africa, provides an opportunity for such a study. Upward facies progressions in the BRC reflect deposition in environments ranging from shallow marine evaporitic brine ponds to a storm- and wave-active shelf to a deep, low-energy basinal setting below storm wave base. Abundances and ratios of Al 2O 3, Zr, TiO 2, and Cr track inputs of various types of volcaniclastic and terrigenous clastic materials. In particular, Zr/Al 2O 3 and Zr serve as proxies for concentration of windblown dust and, indirectly, as proxies for sedimentation rate. Cu, Zn, Ni, and FeO were concentrated in the most slowly deposited transitional and basinal sediments, inconsistent with a hydrothermal setting but consistent with a normal marine setting. The distribution of microfacies defined by associations and layering of clastic, ferruginous, and carbonaceous grains correlates with facies transitions. Fine carbonaceous laminations, which occur only in shallow platform settings, represent photosynthetic microbial mats. These were ripped up and the debris widely redistributed in shallow and deep water by

Flying through an African Greenstone Belt by EMusic

NASA Astrophysics Data System (ADS)

Menghini, Antonio; Pontani, Stefano

2017-04-01

This performance will simulate a flying over and across a "Greenstone Belt" area in Sierra Leone, that was investigated by means of Airborne EM method for detecting gold. VTEM (Versatile Time Domain Electromagnetic - Geotech Ltd) data were sonified according to the procedure (EMusic) defined by Menghini and Pontani (2016). The soundtrack of the video showing a journey through the survey area (also into the subsurface) describes the different geophysical responses, provided by the regolith aquifer, the granitic-gneiss basement and by the greenstone belt bedrock. It represents a funny way to disseminate the knowledge and the utility of the geophysical methods towards common audience. References Menghini, A., and Pontani, S., (2016): What is the Sound of the Earth? First Break, 34, 41-46.

The Widespread Distribution of Komatiitic Tuffs in the 3.3 Ga Weltevreden Formation, Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Thompson, M. E.; Lowe, D. R.; Byerly, G. R.

2007-12-01

The 3.5-3.2 Ga Barberton greenstone belt is a heavily deformed, 10-15 km thick succession of volcanic and sedimentary rocks representing one of the best preserved Paleoarchean supracrustal sequences known. It consists of the basal volcanic-dominated Onverwacht Group and the overlying sedimentary-dominated Fig Tree and Moodies Groups. Major volcanic rocks in the BGB include komatiites, tholeiitic basalts, and dacites. Although flow rocks and fragmental deposits have been identified representing all extrusive magma types, the abundance of komatiitic volcaniclastic units is remarkable considering the mechanical difficulties in explosively erupting low viscosity ultramafic lava. In the Onverwacht Group, most komatiitic tuffs contain 85-95 wt% SiO2, due to early silicification, and very low concentrations of most other elements, making original compositions somewhat uncertain. However, in the northernmost part of the BGB, north of the Inyoka Fault, the ~ 3.3 Ga Weltevreden Formation is composed largely of komatiitic flow rocks, tuffs, layered ultramafic complexes, and subordinate black and banded cherts. Previous studies have established the extrusive nature of the komatiites, but there are also many thick interlayered slaty units, previously interpreted as sheared flow rocks, which show cross-bedding, soft-sediment deformation, and other features indicating an alternate derivation. These units range from 2 to 80 m thick and may represent 10% or more of the overall stratigraphy of the Weltevreden Formation. They are characterized by low-temperature serpentinization that has commonly preserved original elemental abundances, enabling a more precise determination of primary komatiitic liquid composition. These rocks are magnesium rich, with MgO ranging from 23 to 36 wt%, and high Ni (~1500 ppm) and Cr (~2600 ppm) contents typical of komatiites. Several possible mechanisms could have produced these rocks, including (1) erosion and transport of pre-existing komatiitic flow

New mapping near Iron Creek, Talkeetna Mountains, indicates presence of Nikolai greenstone

USGS Publications Warehouse

Schmidt, Jeanine M.; Werdon, Melanie B.; Wardlaw, Bruce R.

2003-01-01

Detailed geologic mapping in the Iron Creek area, Talkeetna Mountains B-5 Quadrangle, has documented several intrusive bodies and rock units not previously recognized and has extended the geologic history of the area through the Mesozoic and into the Tertiary era. Greenschist-facies metabasalt and metagabbro previously thought to be Paleozoic are intruded by Late Cretaceous to Paleocene dioritic to granitic plutons. The metabasalts are massive to amygdaloidal, commonly contain abundant magnetite, and large areas are patchily altered to epidote ± quartz. They host numerous copper oxide–copper sulfide–quartz–hematite veins and amygdule fillings. These lithologic features, recognized in the field, suggested a correlation of the metamafic rocks with the Late Triassic Nikolai Greenstone, which had not previously been mapped in the Iron Creek area. Thin, discontinuous metalimestones that overlie the metabasalt sequence had previously been assigned a Pennsylvanian(?) and Early Permian age on the basis of correlation with marbles to the north, which yielded Late Paleozoic or Permian macrofossils, or both. Three new samples from the metalimestones near Iron Creek yielded Late Triassic conodonts, which confirms the correlation of the underlying metamafic rocks with Nikolai Greenstone. These new data extend the occurrence of Nikolai Greenstone about 70 km southwest of its previously mapped extent.Five to 10 km north of the conodont sample localities, numerous microgabbro and diabase sills intrude siliceous and locally calcareous metasedimentary rocks of uncertain age. These sills probably represent feeder zones to the Nikolai Greenstone. In the Mt. Hayes quadrangle 150 km to the northeast, large sill-form mafic and ultramafic feeders (for example, the Fish Lake complex) to the Nikolai Greenstone in the Amphitheatre Mountains host magmatic sulfide nickel–copper–platinum-group-element (PGE) mineralization. This new recognition of Nikolai Greenstone and possible

Re-Os Isotopic Characteristics of the Earth's Oldest Preserved Oceanic Crustal Fragments (Isua Supracrustals Belt, W Greenland); A Vastly Disturbed System.

NASA Astrophysics Data System (ADS)

Frei, R.; Frei, R.; Jensen, B. K.

2001-12-01

Variably preserved pillow lavas from the Isua Supracrustals Belt (ISB; Western Greenland) exhibit strongly supra-chondritic Re/Os (range from 2 to 45) and highly radiogenic 187Os/188Os isotopic compositions (range from 0.3 to 20.5). Re-Os model ages are geologically meaningless and reflect the disturbances invoked by post-formational metamorphic overprinting and by metasomatic events that were associated with the intrusion of various generations of the precursors of tonalitic gneisses into the ISB. Most prominently, a late Archean (c. 2.8 Ga) tectono-metamorphic event has locally reset the Re-Os clock in high strain domains of the ISB. Disturbance of the Re-Os system was initially caused by Re addition in connection with metasomatic fluid flow during the early Archean (3.65 to 3.81 Ga) emplacement of central dome gneiss precursors and tonalite sheets into the supracrustals sequences. The effects of open system behaviour of the Re-Os system are similarly recorded by the U-Pb and Sm-Nd systems of these meta-basalts, principally revealing the influx of U, Th, Re; LREE and alkaline-rich fluids from the gneisses into the oceanic crustal sequences preserved at Isua (Blichert-Toft and Frei, 2001; Frei et al., in press; Frei and Rosing, in press). Ultramafic lenses with komatiitic chemical affinities within the ISB are equally affected by early addition of Re, but the very much higher Os concentrations (more than an order of magnitude higher than those of the meta-basalts with values ranging from 30 to 150 ppt) did efficiently mask the disturbances in the Os isotope compositions, so that reasonable Re depletion ages (TRD) can still be deduced. The least altered of these ultramafic lenses revealed a TRD) of 3725 Ma and a mantle extraction (TMA) age of 3807 Ma, dates which are compatible with independent U-Pb zircon ages from intrusive tonaltic gneisses (Nutman et al., 1997) and Pb-Pb age constraints from metasomatic minerals of strongly altered meta-basalts (Frei and Rosing

REE geochemistry of 3.2 Ga BIF from the Mapepe Formation, Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Yahagi, T. R.; Yamaguchi, K. E.; Haraguchi, S.; Sano, R.; Teraji, S.; Kiyokawa, S.; Ikehara, M.; Ito, T.

2012-12-01

Banded iron formations (BIFs) are chemical sediments interbedded with Fe- and Si-rich layers, characteristically present in the early history of the Earth. A popular hypothesis for the formation of BIFs postulates that dissolved oxygen produced by photosynthesizers such as cyanobacteria oxidized dissolved ferrous Fe supplied by submarine hydrothermal activities. During precipitation of Fe-oxide minerals, phosphorus and rare earth elements (REEs) were most likely adsorbed on their surface. Therefore, chemical compositions of REEs that adsorbed onto Fe-oxide have useful information on the seawater chemistry at the time of deposition. Especially, information on the redox state of seawater and the extent of the contribution of hydrothermal activity during BIF deposition are expected to have been recorded. Occurrence of BIF has been traditionally tied to the chemical evolution of the atmosphere. Rise of atmospheric oxygen, or as known as GOE (Great Oxidation Event: e.g., Holland, 1994), has been widely believed to have occurred at around 2.4 Ga ago. Contrary, however, some studies have suggested that such oxygenation could have occurred much earlier (e.g., Hoashi et al., 2009). In this study, we used 3.2 Ga old BIF from the Mapepe Formation at the bottom of the Fig Tree Group of the Swaziland Supergroup in the northeastern part of the Barberton Greenstone Belt, South Africa. We aimed to constrain the marine environment, and by inference atmospheric environment, at the time of BIF deposition from REE geochemistry. Major elements and REE compositions of 37 samples were measured using XRF and ICP-MS, respectively. Samples with less than 1.0 wt% Al2O3 are considered to be "pure" BIFs with minimal amount of continental contamination, and are expected to have inherited marine REE signatures. Abundance of REE normalized by C1 chondrite for the analyzed samples commonly exhibits positive Eu anomaly and LREE

The late Archean Schreiber Hemlo and White River Dayohessarah greenstone belts, Superior Province: collages of oceanic plateaus, oceanic arcs, and subduction accretion complexes

NASA Astrophysics Data System (ADS)

Polat, A.; Kerrich, R.; Wyman, D. A.

1998-04-01

The late Archean (ca. 2.80-2.68 Ga) Schreiber-Hemlo and White River-Dayohessarah greenstone belts of the Superior Province, Canada, are supracrustal lithotectonic assemblages of ultramafic to tholeiitic basalt ocean plateau sequences, and tholeiitic to calc-alkaline volcanic arc sequences, and siliciclastic turbidites, collectively intruded by arc granitoids. The belts have undergone three major phases of deformation; two probably prior to, and one during the assembly of the southern Superior Province. Imbricated lithotectonic assemblages are often disrupted by syn-accretion strike-slip faults, suggesting that strike-slip faulting was an important aspect of greenstone belt evolution. Field relations, structural characteristics, and high-precision ICP-MS trace-element data obtained for representative lithologies of the Schreiber-Hemlo and White River-Dayohessarah greenstone belts suggest that they represent collages of oceanic plateaus, juvenile oceanic island arcs, in subduction-accretion complexes. Stratigraphic relationships, structural, and geochemical data from these Archean greenstone belts are consistent with a geodynamic evolution commencing with the initiation of a subduction zone at the margins of an oceanic plateau, similar to the modern Caribbean oceanic plateau and surrounding subduction-accretion complexes. All supracrustal assemblages include both ocean plateau and island-arc geochemical characteristics. The structural and geochemical characteristics of vertically and laterally dismembered supracrustal units of the Schreiber-Hemlo and White River-Dayohessarah greenstone belts cannot be explained either by a simple tectonic juxtaposition of lithotectonic assemblages with stratified volcanic and sedimentary units, or cyclic mafic to felsic bimodal volcanism models. A combination of out-of-sequence thrusting, and orogen-parallel strike-slip faulting of accreted ocean plateaus, oceanic arcs, and trench turbidites can account for the geological and

Depositional environment of the Onverwacht sedimentary rocks Barberton greenstone belt, South Africa

NASA Astrophysics Data System (ADS)

Paris, I. A.

The Onverwacht Group is the basal part of the ca 3.5 Ga succession forming the Barberton greenstone belt. It comprises a volcanic pile overlain by a thin layer of volcaniclastic sediments which, due to silicification, are extremely well preserved. There has been a controversy as to how and in what environment these sediments were formed, different sets of data being presented to reach opposite conclusions. The Onverwacht Group has been extensively repeated tectonically and here for the first time, sediments from different structural levels are studied together. Three separate facies have been recognised, a distal and proximal turbidite facies and a subaerial facies. Deposition of Onverwacht Group sedimentary rocks occurred in an oceanic basin characterised by the presence of emergent volcanic islands. After eruption, material was deposited both subaerially and in a shallow submarine environment on the volcanic slopes and, as a result of pyroclastic flow, in the deeper parts of the basin.

Trace element and Sm Nd systematics of volcanic and intrusive rocks from the 3 Ga Lumby Lake Greenstone belt, Superior Province: evidence for Archean plume arc interaction

NASA Astrophysics Data System (ADS)

Hollings, Pete; Wyman, Derek

1999-02-01

The metavolcanic Lumby Lake belt comprises mafic tholeiites intercalated with thin felsic pyroclastic units. Al-undepleted komatiites are present towards the top of the stratigraphy. Identification of Al-depleted pyroclastic komatiites associated with chemical and siliciclastic sedimentary rocks indicates the upper portion of the 3 Ga Lumby Lake stratigraphy is directly comparable to a stratigraphic sequence developed on a paleoregolith in the nearby Steep Rock greenstone belt. The lower portion of the Lumby Lake sequence therefore represents a rarely preserved association of komatiite-tholeiite and calc alkaline volcanism developed prior to rifting episodes identified in ˜3 Ga terranes of the northern Superior Province. Al-undepleted komatiites are characterised by elevated MgO (18-24 wt.%) and Ni (600-1500 ppm) contents, in conjunction with variable LREE depletion (La/Sm n=0.5-0.8). Intercalated spinifex textured komatiitic basalts possess lower MgO (10-11 wt.%) and Ni (150-180 ppm) and flat to weakly enriched LREE (La/Sm n=0.9-1.1). Pyroclastic Al-depleted komatiites (Al 2O 3/TiO 2=4-5) are strongly LREE enriched (La/Yb n=6.7-10.5) with variable HFSE anomalies. Compositionally uniform tholeiites with variably depleted to enriched LREE (La/Sm n=0.8-1.2) and minor HFSE anomalies dominate the stratigraphy of the belt. A distinct subset of tholeiites, occurring towards the centre of the belt, is characterised by low Al 2O 3/TiO 2 ratios, LREE enrichment and the absence of HFSE anomalies. Minor intermediate (SiO 2=53-64 wt.%) volcanic rocks with pronounced REE fractionation (La/Yb n=0.8-1.1), high Al 2O 3/TiO 2 and Zr/Y ratios also occur throughout the belt. Two distinct subtypes of felsic pyroclastic rocks are recognised intercalated sporadically throughout the stratigraphy. Both types display pronounced LREE enrichment (La/Sm n=3.9-6.1) but Type 1 has strongly fractionated HREE patterns (Gd/Yb n=1.5-4.6) whereas, Type 2 HREE patterns are generally flat (Gd/Yb n=1

Barberton greenstone belt volcanism: Succession, style and petrogenesis

NASA Technical Reports Server (NTRS)

Byerly, G. R.; Lowe, D. R.

1986-01-01

The Barberton Mountain Land is an early Archean greenstone belt along the eastern margin of the Kaapvaal Craton of southern Africa. Detailed mapping in the southern portion of the belt leads to the conclusion that a substantial thickness is due to original deposition of volcanics and sediments. In the area mapped, a minimum thickness of 12km of predominantly mafic and ultramafic volcanics comprise the Komati, Hooggenoeg, and Kromberg Formations of the Onverwacht Group, and at least one km of predominantly pyroclastic and epiclastic sediments derived from dacitic volcanics comprise the Fig Tree Group. The Barberton greenstone belt formed primarily by ultramafic to mafic volcanism on a shallow marine platform which underwent little or no concurrent extension. Vents for this igneous activity were probably of the non-constructional fissure type. Dacitic volcanism occurred throughout the sequence in minor amounts. Large, constructional vent complexes were formed, and explosive eruptions widely dispersed pyroclastic debris. Only in the final stages of evolution of the belt did significant thrust-faulting occur, generally after, though perhaps overlapping with, the final stage of dacitic igneous activity. A discussion follows.

Evidence for a complex archean deformational history; southwestern Michipicoten Greenstone Belt, Ontario

NASA Technical Reports Server (NTRS)

Mcgill, George E.; Shrady, Catherine H.

1986-01-01

The Michipicoten Greenstone Belt extends for about 150 km ENE from the northeastern angle of Lake Superior. In common with many other Archean greenstone belts, it is characterized by generally steep bedding dips and a distribution of major lithologic types suggesting a crudely synclinal structure for the belt as a whole. Detailed mapping and determination of structural sequence demonstrates that the structure is much more complex. The Archean history of the belt includes formation of at least three regionally significant cleavages, kilometer-scale overturning, extensive shearing, and diabase intrusion. Most well defined, mappable 'packages' of sedimentary rocks appear to be bounded by faults. These faults were active relatively early in the structural history of the belt, when extensive overturning also occurred. Steepening of dips, NW-SE shortening, development of steep NE cleavage, and pervasive shearing all postdate the early faulting and the regional overturning, obscuring much of the detail needed to define the geometry of the earlier structures. The results obtained so far suggest, however, that the Michipicoten Greenstone Belt underwent an early stage of thrusting and associated isoclinal folding, probably in a convergent tectonic environment.

Stromatolites at ~3,500 Myr and a greenstone-granite unconformity in the Zimbabwean Archaean

NASA Astrophysics Data System (ADS)

Orpen, J. L.; Wilson, J. F.

1981-05-01

Two controversial areas of geological endeavour are the establishment of the antiquity of life and the tectonic setting of greenstone sequences. We record here the recent discoveries in the Fort Victoria greenstone belt of stromatolites in limestones assigned to ~3,500 Myr (minimum age) Sebakwian Group rocks of the Rhodesian Archaean Craton within Zimbabwe, and a nearby outcrop of a thin sedimentary formation, basal to a thick ~2,700 Myr volcanic pile, resting with definite unconformity on ~3,500 Myr Mushandike Granite.

Reconstruction of the Paleoproterozoic deeper ocean environment: Preliminary Report of the Ghana Birimian Greenstone Belt Drilling Project (GHB)

NASA Astrophysics Data System (ADS)

Kiyokawa, S.; Yoshimaru, S.; Miki, T.; Sakai, S.; Ikehara, M.; Yamaguchi, K. E.; Ito, T.; Onoue, T.; Takehara, M.; Tetteh, G. M.; Nyame, F. K.

2016-12-01

The Paleoproterozoic Era are one of the most rapid environmental change when the earth surface environment was affected by formation of continents and increasing atmospheric oxygen levels. Major oxidation of Great Oxidation Event (GOE) are reported this ages (eg. Holland, 2006; Condie, 2001; Lyons et al., 2014). The nature of deep sea environments at this time have not been clearly identified and oceanic sediments are mostly involved in subduction. The Paleoproterozoic Birimian Greenstone Belt is an ophiolitic volcaniclastic sequence in Ghana, with depositional age of over 2.3-2.2 Ga (Petersson et al., 2016). Detail research was conducted of the Ashanti (Axim-Konongo) Belt of the Birimian Greenstone Belt along the coast near Cape Three Points area. Very thick volcaniclastic and organic-rich sedimentary rocks, which we now refer to as the Cape Three Points Group, crop out in the lower part of the Birimian Greenstone Belt. Stratigraphically, three unit identified; the lower portion contains thick vesicular volcaniclastic rocks, the middle portion is made up of laminated volcaniclastics and black shale, and the upper portion dominated by fine laminated volcaniclastics with more black shale sequence. Continuous core drilling from Dec 3-12th 2015 of the upper part of the sequence intersected saprolite to a depth of 30m and fresh, well preserved stratigraphy with graded bedding and lamination to a depth of 195m. Half cut cores show well laminated organic rich black shale and relative carbonate rich layers with very fine pyrite grains. SHRIMP age data from a porphyry intrusion into this sequence indicate an age of 2250 Ma. Carbon isotope analysis shows δ13C = -43 to -37‰ for black shale with the very light isotope values for cyanobacterial signature.The fining-upward sequences, well laminated bed and black shales and REE data suggest this sequence situated partly silent stagnant with volcanic activity ocean floor environment around an oceanic island arc condition.

The transition from an Archean granite-greenstone terrain into a charnockite terrain in southern India

NASA Technical Reports Server (NTRS)

Condie, K. C.; Allen, P.

1983-01-01

In southern India, it is possible to study the transition from an Archean granite-greenstone terrain (the Karnataka province) into high grade charnockites. The transition occurs over an outcrop width of 20-35 km and appears to represent burial depths ranging from 15 to 20 km. Field and geochemical studies indicate that the charnockites developed at the expense of tonalites, granites, and greenstones. South of the transition zone, geobarometer studies indicate burial depths of 7-9 kb.

Heat flow and heat generation in greenstone belts

NASA Technical Reports Server (NTRS)

Drury, M. J.

1986-01-01

Heat flow has been measured in Precambrian shields in both greenstone belts and crystalline terrains. Values are generally low, reflecting the great age and tectonic stability of the shields; they range typically between 30 and 50 mW/sq m, although extreme values of 18 and 79 mW/sq m have been reported. For large areas of the Earth's surface that are assumed to have been subjected to a common thermotectonic event, plots of heat flow against heat generation appear to be linear, although there may be considerable scatter in the data. The relationship is expressed as: Q = Q sub o + D A sub o in which Q is the observed heat flow, A sub o is the measured heat generation at the surface, Q sub o is the reduced heat flow from the lower crust and mantle, and D, which has the dimension of length, represents a scale depth for the distribution of radiogenic elements. Most authors have not used data from greenstone belts in attempting to define the relationship within shields, considering them unrepresentative and preferring to use data from relatively homogeneous crystalline rocks. A discussion follows.

Spinifex-textured komatiites in the south border of the Carajas ridge, Selva Greenstone belt, Carajás Province, Brazil

NASA Astrophysics Data System (ADS)

Siepierski, Lincoln; Ferreira Filho, Cesar Fonseca

2016-03-01

.%, and cumulate textured komatiites have MgO contents up to 40.6 wt.%. When plotted vs MgO contents, most major and minor elements fall on well-defined linear trends indicating control by olivine fractionation or accumulation. Komatiites from the Selva and Seringa (located in the Rio Maria Domain) belts are Al-undepleted with Al2O3/TiO2 ratios close to 20. Results for CaO, Na2O, and REE suggest that these elements were mobile and their abundances have been modified during metasomatic alteration. REE contents in some samples are very high (up to 40 times primitive mantle values) and REE patterns vary from flat (La/YbMN ∼ 1) to highly enriched in LREE (La/YbMN up to ∼ 10). The REE mobility may be related to hydrothermal alteration associated to Cu-Au mineralization in the region. The identification of spinifex-textured komatiites close to the Carajás Basin suggests the continuation of 3.0-2.9 Ga greenstone belts of the Rio Maria Domain within the Transition Subdomain, and enlarges the area with potential to host komatiite-associated Ni-Cu-PGE deposits.

The dehydration, rehydration and tectonic setting of greenstone belts in a portion of the northern Kaapvaal Craton, South Africa

NASA Technical Reports Server (NTRS)

Vanreenen, D. D.; Barton, J. M., Jr.; Roering, C.; Vanschalkwyk, J. C.; Smit, C. A.; Debeer, J. D.; Stettler, E. H.

1986-01-01

High-grade gneiss terranes and low-grade granite-greenstone terranes are well known in several Archaean domains. The geological relationship between these different crustal regions, however, is still controversial. One school of thought favors fundamental genetic differences between high-grade and low-grade terranes while others argue for a depth-controlled crustal evolution. The detailed examination of well-exposed Archaean terranes at different metamorphic grades, therefore, is not only an important source of information about the crustal levels exposed, but also is critical to the understanding of the possible tectonic and metamorphic evolution of greenstone belts with time. Three South African greenstone belts are compared.

Plume magmatism and crustal growth at 2.9 to 3.0 Ga in the Steep Rock and Lumby Lake area, Western Superior Province

NASA Astrophysics Data System (ADS)

Tomlinson, K. Y.; Hughes, D. J.; Thurston, P. C.; Hall, R. P.

1999-01-01

The greenstone belts of the western Superior Province are predominantly 2.78 to 2.69 Ga and provide evidence of oceanic and arc volcanism during the accretionary phase of development of the Superior Province. There is also scattered evidence of Meso-Archean crust (predominantly 2.9 to 3.0 Ga) within the western Superior Province. The Meso-Archean greenstone belts commonly contain platformal sediments and unconformably overlie granitoid basement. The platformal sediments occur associated with komatiitic and tholeiitic volcanic rocks that suggest a history of magmatism associated with rifting during the Meso-Archean. The central Wabigoon Subprovince is a key area of Meso-Archean crust and in its southern portion comprises the Steep Rock, Finlayson and Lumby Lake greenstone belts. The Steep Rock greenstone belt unconformably overlies 3 Ga continental basement and contains platformal sediments succeeded by komatiitic and tholeiitic volcanic rocks. The Lumby Lake greenstone belt contains thick sequences of mafic volcanics, a number of komatiite horizons, and thin platformal sedimentary units. The two belts are joined by the predominantly mafic volcanic Finlayson greenstone belt. The volcanics throughout these three greenstone belts may be correlated to some extent and a range of basaltic and komatiite types is present. Al-undepleted komatiites present in the Lumby Lake greenstone belt have an Al 2O 3/TiO 2 ratio ranging from 14 to 27 and (Gd/Yb) N from 0.7 to 1.3. These are divided into basaltic komatiites with generally unfractionated mantle-normalised multi-element profiles, and spinifex-textured high-Mg basalts with slightly light REE enriched multi-element profiles and small negative Nb and Ta anomalies. The unfractionated basaltic komatiites represent high degree partial melts of the upper mantle whereas the spinifex-textured high-Mg basalts represent evolutionary products of the komatiite liquids following olivine and chromite fractionation and crustal

A continuous record of tectonic evolution from 3.5 Ga to 2.6 Ga in Swaziland and northern Natal

NASA Technical Reports Server (NTRS)

Hunter, D. R.; Wilson, A. H.; Versfeld, J. A.; Allen, A. R.; Smith, R. G.; Sleigh, D. W. W.; Groenewald, P. B.; Chutter, G. M.; Preston, V. A.

1986-01-01

The approx. 3.5 Ga-old bimodal suite underlying an extensive area in southwestern Swaziland comprises the oldest-dated sialic rocks in the Kaapvaal structural province. The suite consists of leucocratic, layered tonalitic-trondhjemitic gneisses and amphibolites characterized by the effects of repeated high strains. This suite is considered to represent a sialic basement on which metavolcanic and metasedimentary rocks, now preserved as scattered greenstone remnants, accumulated. Direct evidence to confirm this temporal relationship is lacking, but structural data from the Dwalile, Assegaai and Commondale areas indicate that (1) the bimodal gneisses experienced a complex structural history prior to the first recognizable deformation in the supracrustal rocks (i.e., D1 in the supracrustals is equivalent to Dn + 1 in the gneisses) and (2) scattered remnants of the Dwalile rocks infolded with the bimodal suite structurally overlie the gneisses and are preserved in synformal keels. Significant proportions of metaquartzites and metapelites are present in the Assegaai greenstone sequence, the presence of which implies the existence of felsic crust in the source area from which these sediments were derived, a conclusion that is consistent with the structural data.

Geochemistry of volcanic rocks from the Wawa greenstone belt

NASA Technical Reports Server (NTRS)

Schulz, K. J.; Sylvester, P. J.; Attoh, K.

1983-01-01

The Wawa greenstone belt is located in the District of Algoma and extends east-northeast from Lake Superior to the western part of the Sudbury District in Ontario, Canada. Recent mapping by Attoh has shown that an unconformity at the base of the Dore' Formation and equivalent sedimentary rocks marks a significant stratigraphic break which can be traced throughout the volcanic belt. This break has been used to subdivide the volcanic-sedimentary into pre- and post-Dore' sequences. The pre-Dore' sequence includes at least two cycles of mafic-to-felsic volcanism, each capped by an iron-formation unit. The post-Dore' sequence includes an older mafic-to-felsic unit, which directly overlies sedimentary rocks correlated with the Dore' Formation, and a younger felsic breccia unit interpreted to have formed as debris flows from a felsic volcanic center. In the present study, samples of both the pre-and post-Dore' volcanic sequences were analyzed for major and trace elements, incuding rare earths (REE). This preliminary study is part of an ongoing program to assess the petrogenesis of the volcanic rocks of the Wawa greenstone belt.

Rhyolitic components of the Michipicoten greenstone belt, Ontario: Evidence for late Archaen intracontinental rifts or convergent plate margins in the Canadian Shield?

NASA Technical Reports Server (NTRS)

Sylvester, P. J.; Attoh, K.; Schulz, K. J.

1986-01-01

Rhyolitic rocks often are the dominant felsic end member of the biomodal volcanic suites that characterize many late Archean greenstone belts of the Canadian Shield. The rhyolites primarily are pyroclastic flows (ash flow tuffs) emplaced following plinian eruptions, although deposits formed by laval flows and phreatomagmatic eruptions also are presented. Based both on measured tectono-stratigraphic sections and provenance studies of greenstone belt sedimentary sequences, the rhyolites are believed to have been equal in abundance to associated basaltic rocks. In many recent discussions of the tectonic setting of late Archean Canadian greenstone belts, rhyolites have been interpreted as products of intracontinental rifting . A study of the tectono-stratigraphic relationships, rock associations and chemical characteristics of the particularly ell-exposed late Archean rhyolites of the Michipicoten greenstone belt, suggests that convergent plate margin models are more appropriate.

Evidence for Microbial Activity in ~3.5 Ga Pillow Basalts From the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Muehlenbachs, K.; Banerjee, N. R.; Furnes, H.; Staudigel, H.; de Wit, M.

2004-05-01

We have discovered biosignatures in the formerly glassy rims of pillow lavas from the Mesoarchean Barberton Greenstone Belt (BGB) in South Africa. Over the last decade, bioalteration of basaltic glass in pillow lavas and volcaniclastic rocks has been well documented from in-situ oceanic crust and well-preserved Phanerozoic ophiolites. Much of the debate regarding the biogenicity of purported microfossils of early life centers on the interpretation of the host rocks' protoliths. To date, most protoliths have been interpreted to be of sedimentary origin. Some workers have proposed alternate origins for these substrates, including hydrothermal and even volcanic derivation, to cast doubt on their putative biogenicity. Hence studies documenting evidence for early life have proven to be controversial. Here we document evidence for microbial activity in ~3.5 Ga subaqueous volcanic rocks that represent a new, unambiguous geological setting in the search for early life on Earth. The BGB magmatic sequence is dominated by mafic to ultramafic pillow lavas, sheet flows, and intrusions interpreted to represent 3480- to 3220-million-year-old oceanic crust and island arc assemblages. The BGB pillow lavas are exceptionally well-preserved and represent unequivocal evidence that these rocks were erupted in a subaqueous environment. The formerly glassy rims of the BGB pillow lavas contain micron-sized, microbially generated, tubular structures consisting of titanite. These structures are interpreted to have formed during microbial etching of the originally glassy pillow rims and were subsequently mineralized by titanite during greenschist facies seafloor hydrothermal alteration. Overlapping metamorphic and magmatic dates from the pillow lavas suggest this process occurred soon after eruption of the pillow lavas on the seafloor. X-ray mapping has revealed the presence of carbon along the margins of the tubular structures. Disseminated carbonates within the microbially altered BGB

New insights into typical Archaean structures in greenstone terranes of western Ontario

NASA Technical Reports Server (NTRS)

Schwerdtner, W. M.

1986-01-01

Ongoing detailed field work in selected granitoid complexes of the western Wabigoon and Wawa Subprovinces, southern Canadian Shield, has led to several new conclusions: (1) Prominent gneiss domes are composed of prestrained tonalite-granodiorite and represent dense hoods of magmatic granitoid diapirs; (2) the deformation history of the prestrained gneiss remains to be unraveled; (3) the gneiss lacked a thick cover of mafic metavolcanics or other dense rocks at the time of magmatic diaprisim; (4) the synclinoral structure of large greenstone belts is older than the late gneiss domes and may have been initiated by volcano-tectonic processes; (5) small greenstone masses within the gneiss are complexly deformed, together with the gneiss; and, (6) no compelling evidence has been found of ductile early thrusting in the gneiss terranes. Zones of greenstone enclaves occur in hornblende-rich contaminated tonalite and are apt to be deformed magmatic septa. Elsewhere, the tonalite gneiss is biotite-rich and hornblende-poor. These conclusions rest on several new pieces of structural evidence; (1) oval plutons of syenite-diorite have magmatic strain fabrics and sharp contacts that are parallel to an axial-plane foliation in the surrounding refolded gneiss; (2) gneiss domes are lithologically composite and contain large sheath-like structures which are deformed early plutons, distorted earlier gneiss domes, or early ductile nappes produced by folding of planar plutonic septa, and (3) the predomal attitudes of gneissosity varied from point to point.

Abiological origin of described stromatolites older than 3.2 Ga

NASA Technical Reports Server (NTRS)

Lowe, D. R.

1994-01-01

The three well-documented occurrences of three-dimensional stromatolites older than 3.2 Ga meet most criteria for biogenicity except the presence of fossil bacteria. However, they also show features more consistent with nonbiological origins. Small conical structures in the Strelley Pool chert in the upper part of the Warrawoona Group (3.5-3.2 Ga), Western Australia, lack the structure typical of stromatolites and probably formed mainly through evaporitc precipitation. A domal structure from the North Pole chert, Warrawoona Group, formed by soft-sediment deformation or originally flat layers. Laminated chert containing domal and pseudocolumnar structures in the Onverwacht Group (3.5-3.3 Ga), Barberton Greenstone Belt, South Africa, extends downward into veins and cavities, where it formed through inorganic precipitation. Although bacterial communities were widespread on Earth prior to 3.2 Ga, these particular three-dimensional structures are probably abiotic in origin and do not provide information on the paleobiology or paleoecology of early organisms. The paucity of Archean stromatolites older than 3.2 Ga probably reflects the paucity of known and possibly extant carbonate deposits of this age.

Petrography and the REE-composition of apatite in the Paleoproterozoic Pilgujärvi Sedimentary Formation, Pechenga Greenstone Belt, Russia

NASA Astrophysics Data System (ADS)

Joosu, Lauri; Lepland, Aivo; Kreitsmann, Timmu; Üpraus, Kärt; Roberts, Nick M. W.; Paiste, Päärn; Martin, Adam P.; Kirsimäe, Kalle

2016-08-01

The first globally significant phosphorous-rich deposits appear in the Paleoproterozoic at around 2 Ga, however, the specific triggers leading to apatite precipitation are debated. We examine phosphorous-rich rocks (up to 8 wt% P2O5) in 1.98-1.92 Ga old Pilgujärvi Sedimentary Formation, Pechenga Greenstone Belt, Russia. Phosphates in these rocks occur as locally derived and resedimented sand-to-gravel/pebble sized grains consisting of apatite-cemented muddy sediments. Phosphatic grains can be subdivided into four petrographic types (A-D), each has a distinct REE signature reflecting different early-to-late diagenetic conditions and/or metamorphic overprint. Pyrite containing petrographic type D, which typically has a flat REE pattern, negative Ce anomaly and positive Eu anomaly, is the best preserved of the four types and best records conditions present during apatite precipitation. Type D phosphatic grains precipitated under (sub)oxic basinal conditions with a significant hydrothermal influence. These characteristics are similar to Zaonega Formation phosphates of NW Russia's Onega Basin, and consistent with phosphogenesis triggered by the development of anoxic(sulfidic)-(sub)oxic redoxclines at shallow sediment depth during the Paleoproterozoic.

Geochemistry of contaminated komatiites from the Umburanas greenstone belt, Bahia State, Brazil

NASA Astrophysics Data System (ADS)

Menezes Leal, Angela Beatriz de; Santos, André Luis Dias; Bastos Leal, Luiz Rogério; Cunha, José Carlos

2015-08-01

The late Archaean Umburanas greenstone belt (UGB) is located in the São Francisco Craton, southwest of Bahia State, Brazil. The lower unit of UGB comprises basal komatiite lavas and tholeiitic basalts intercalated with felsic volcanic rocks. The regional crystalline basement rocks, the Gavião block, predominantly consist of granitic, granodioritic and migmatitic gneiss along with tonalite-trondhjemite-granodiorite (TTG) associations. Petrographic studies of UGB komatiites reveal characteristic spinifex igneous texture although primary mineralogy is rarely preserved. Based on textural relationships, komatiites are divided into cumulate, spinifex, and massive types. The MgO content varies in the range 31.5-40.4 wt%. The MgO-SiO2 negative correlation in komatiites suggests olivine fractionation trend. The UGB komatiites are of Al-undepleted type, characterized by Al2O3/TiO2 (21-48) ratio, enriched in highly incompatible LILE relative to moderately incompatible HFSE and distinct negative Nb, Sr and Eu anomalies. Also shows depletion of light rare earths, convex-downward rare earth patterns typically not observed in komatiites world-wide, and primitive mantle normalized Gd/Yb (1.03-1.23) and La/Sm (2.36-4.99) ratios. The negative Eu anomaly is attributed to the circulation of H2O-rich fluid, whereas the negative Nb and Sr anomalies are attributed to contamination from granitic basement rocks of the Gavião block. The UGB komatiites are most likely derived from adiabatic decompressional melting of a mantle plume. The melting took place at liquidus temperatures in the range 1572-1711 °C, which is consistent with mantle-plume origin invoked for several other komatiites in Archaean greenstone belts elsewhere. The melts were more likely generated at a depth shallower than 100 km (pressure < 2.5 GPa) where garnet was absent in the source mineralogy. Geochemical characteristics suggest contamination of primary melts with granitic basement rocks either during ascent of melt

Geochemistry of komatiites and basalts from the Rio das Velhas and Pitangui greenstone belts, São Francisco Craton, Brazil: Implications for the origin, evolution, and tectonic setting

NASA Astrophysics Data System (ADS)

Verma, Sanjeet K.; Oliveira, Elson P.; Silva, Paola M.; Moreno, Juan A.; Amaral, Wagner S.

2017-07-01

The Neoarchean Rio das Velhas and Pitangui greenstone belts are situated in the southern São Francisco Craton, Minas Gerais, Brazil. These greenstone belts were formed between ca. 2.79-2.73 Ga, and consist mostly of mafic to ultramafic volcanics and clastic sediments, with minor chemical sediments and felsic volcanics that were metamorphosed under greenschist facies. Komatiites are found only in the Rio das Velhas greenstone belt, which is composed of high-MgO volcanic rocks that have been identified as komatiites and high-Mg basalts, based on their distinctive geochemical characteristics. The Rio das Velhas komatiites are composed of tremolite + actinolite + serpentine + albite with a relict spinifex-texture. The Rio das Velhas komatiites have a high magnesium content ((MgO)adj ≥ 28 wt.%), an Al-undepleted Munro-type [(Al2O3/TiO2)adj and (CaO/Al2O3)adj] ratio ranging from 27 to 47 and 0.48 to 0.89, relatively low abundances of incompatible elements, a depletion of light rare earth elements (LREE), a pattern of non-fractionated heavy rare- earth elements (HREE), and a low (Gd/Yb)PM ratio (≤ 1.0). Negative Ce anomalies suggest that alteration occurred during greenschist facies metamorphism for the komatiites and high-Mg basalts. The low [(Gd/Yb)PM < 1.0] and [(CaO/Al2O3)adj < 0.9)], high [(Al2O3/TiO2)adj > 18] and high HREE, Y, and Zr content suggest that the Rio das Velhas komatiites were derived from the shallow upper mantle without garnet involvement in the residue. The chemical compositions [(Al2O3/TiO2)adj, (FeO)adj, (MgO)adj, (CaO/Al2O3)adj, Na, Th, Ta, Ni, Cr, Zr, Y, Hf, and REE] indicate that the formation of the komatiites, high-Mg basalts and basalts occurred at different depths and temperatures in a heterogeneous mantle. The komatiites and high-Mg basalts melted at liquidus temperatures of 1450-1550 °C. The Pitangui basalts are enriched in the highly incompatible LILE (large-ion lithophile elements) relative to the moderately incompatible HFS (high

Spherule Beds 3.47-3.24 Billion Years Old in the Barberton Greenstone Belt, South Africa: A Record of Large Meteorite Impacts and Their Influence on Early Crustal and Biological Evolution

NASA Technical Reports Server (NTRS)

Lowe, Donald R.; Byerly, Gary R.; Kyte, Frank T.; Shukolyukov, Alexander; Asaro, Frank; Krull, Alexander

2003-01-01

Four layers, S1-S4, containing sand-sized spherical particles formed as a result of large meteorite impacts, occur in 3.47-3.24 Ga rocks of the Barberton Greenstone Belt, South Africa. Ir levels in S3 and S4 locally equal or exceed chondritic values but in other sections are at or only slightly above background. Most spherules are inferred to have formed by condensation of impact-produced rock vapor clouds, although some may represent ballistically ejected liquid droplets. Extreme Ir abundances and heterogeneity may reflect element fractionation during spherule formation, hydraulic fractionation during deposition, and/or diagenetic and metasomatic processes. Deposition of S1, S2, and S3 was widely influenced by waves and/or currents interpreted to represent impact-generated tsunamis, and S1 and S2 show multiple graded layers indicating the passage of two or more wave trains. These tsunamis may have promoted mixing within a globally stratified ocean, enriching surface waters in nutrients for biological communities. S2 and S3 mark the transition from the 300-million-year-long Onverwacht stage of predominantly basaltic and komatiitic volcanism to the late orogenic stage of greenstone belt evolution, suggesting that regional and possibly global tectonic reorganization resulted from these large impacts. These beds provide the oldest known direct record of terrestrial impacts and an opportunity to explore their influence on early life, crust, ocean, and atmosphere. The apparent presence of impact clusters at 3.26-3.24 Ga and approx. 2.65-2.5 Ga suggests either spikes in impact rates during the Archean or that the entire Archean was characterized by terrestrial impact rates above those currently estimated from the lunar cratering record.

Spherule beds 3.47-3.24 billion years old in the Barberton Greenstone Belt, South Africa: a record of large meteorite impacts and their influence on early crustal and biological evolution.

PubMed

Lowe, Donald R; Byerly, Gary R; Kyte, Frank T; Shukolyukov, Alexander; Asaro, Frank; Krull, Alexandra

2003-01-01

Four layers, S1-S4, containing sand-sized spherical particles formed as a result of large meteorite impacts, occur in 3.47-3.24 Ga rocks of the Barberton Greenstone Belt, South Africa. Ir levels in S3 and S4 locally equal or exceed chondritic values but in other sections are at or only slightly above background. Most spherules are inferred to have formed by condensation of impact-produced rock vapor clouds, although some may represent ballistically ejected liquid droplets. Extreme Ir abundances and heterogeneity may reflect element fractionation during spherule formation, hydraulic fractionation during deposition, and/or diagenetic and metasomatic processes. Deposition of S1, S2, and S3 was widely influenced by waves and/or currents interpreted to represent impact-generated tsunamis, and S1 and S2 show multiple graded layers indicating the passage of two or more wave trains. These tsunamis may have promoted mixing within a globally stratified ocean, enriching surface waters in nutrients for biological communities. S2 and S3 mark the transition from the 300-million-year-long Onverwacht stage of predominantly basaltic and komatiitic volcanism to the late orogenic stage of greenstone belt evolution, suggesting that regional and possibly global tectonic reorganization resulted from these large impacts. These beds provide the oldest known direct record of terrestrial impacts and an opportunity to explore their influence on early life, crust, ocean, and atmosphere. The apparent presence of impact clusters at 3.26-3.24 Ga and approximately 2.65-2.5 Ga suggests either spikes in impact rates during the Archean or that the entire Archean was characterized by terrestrial impact rates above those currently estimated from the lunar cratering record.

Extreme Hafnium Values in Archean Banded Iron Formations: Evidence for Sedimentary Lu/Hf Fractionation at 3.2 Ga or Diagenesis?

NASA Astrophysics Data System (ADS)

Foster, I. S.; Agranier, A.; Heubeck, C. E.; Köhler, I.; Homann, M.; Tripati, A. K.; Nonnotte, P.; Ponzevera, E.; Lalonde, S.

2017-12-01

The emergence of continental crust above sea level in the early Precambrian would have created the first terrestrial habitats, and initiated atmosphere-driven weathering of the continents, yet the history of continental emergence is largely unknown[1]. Precambrian chemical sediments, specifically Banded Iron Formation (BIF), appear to have sampled the Hf-Nd isotope composition of ancient seawater, and may preserve a historical record of the emergence of the continental landmass[2] via Lu/Hf fractionation induced by subaerial differential weathering[3,4]. However, paired Hf-Nd isotope data are available for only one BIF to date, indicating appreciable emerged continental landmass ca. 2.7 Ga[2]. Our work extends this record back into the Eo- and Meso-Archean using samples of 3.8 Ga BIF from Isua, Greenland, and 3.2 Ga BIF from the Moodies Group, S. Africa. Isua samples appear to have been altered by amphibolite-grade metamorphism, however Moodies Group samples appear primary, having experienced significantly lower metamorphic grades. Moodies samples appear to retain their primary seawater signatures, however, their range of ˜Hf(i) values, from -54.6 to +40.7, is among the most extreme ever reported. Such extreme values may be indicative of one of several possibilities: unusual and intense sedimentary Lu/Hf fractionation during the Mesoarchean relative to today, sampling of a continuum of compositions from two sources with distinct Hf-compositions, or the result of early diagenetic processes occurring soon after the deposition of the Moodies Group BIF. These results suggest that interpretation of ˜Hf and ˜Nd data from BIF is not as straightforward as previously suggested[2], and positive ˜Hf values are not necessarily indicative of emerged continental crust. [1] Flament et al. (2013), Precambrian Research, 229, 177-188. [2] Veihmann et al. (2014), Geology, 42, 115-118. [3] Bayon et al. (2006), Geology, 34, 433-436. [4] Vervoort et al. (2011), Geochimica et

The Tectonometamorphic Evolution of a 3.2 Ga Tectonic Mélange at the Base of the Barberton Greenstone Belt, South Africa: P-T-t Constraints From the Theespruit Formation

NASA Astrophysics Data System (ADS)

Diener, J.; Stevens, G.; Kisters, A.; Poujol, M.

2004-05-01

The Paleo- to Mesoarchaean Barberton granite-greenstone terrain in South Africa consists of two main components: a southern high-grade metamorphic granite-gneiss terrain and the low-grade metamorphic supracrustal sequence of the Barberton greenstone belt in the north. The gneiss terrain records peak metamorphic conditions of 8 - 11 kbar and 650 - 700 °C, attained at 3229 ± 9 Ma (Dziggel et al., 2002), coinciding with the main phase of collisional tectonics in the greenstone belt (De Ronde and De Wit, 1994). Conversely, estimates of 2.6 ± 0.6 kbar and 360 ± 50 °C reflect metamorphic conditions in the low-grade supracrustal at this time (Cloete, 1999). The boundary of the two different domains corresponds to the Theespruit Formation, a highly tectonized mélange of metabasites, felsic volcanics and rare, aluminous clastic sediments. The metamorphic and structural evolution of the Theespruit Formation was investigated in the Tjakastad Schist Belt in order to constrain the tectonometamorphic history and the significance of this basal mélange for the juxtaposition of these two crustal domains. The pretectonic peak metamorphic assemblage Ky-St-Bt-Ms-Pl-Q quartz occurs in aluminous horizons within the metasediments. These horizons are intercalated with more Fe-Mg-rich sediments that record the peak metamorphic assemblage Grt-St-Bt-Chl-Pl-Q. THERMOCALC estimates from the garnet-bearing metasediments constrain peak P-T conditions at 7.7 ± 0.9 kbar and 560 ± 15 °C. Associated metabasites display peak assemblages consisting of garnet + hornblende + epidote + plagioclase + quartz, which yields a P-T estimate of 7.0 ± 1.6 kbar and 560 ± 60 °C. Retrograde estimates of 3.8 ± 1.3 kbar and 543 ± 20 °C, as well as sillimanite overgrowths on kyanite, indicate that retrogression involved close to isothermal decompression of ca. 4 kbar prior to cooling into the greenschist facies. The age of amphibolite facies metamorphism has been determined by in situ LA

Chronology of early Archaean granite-greenstone evolution in the Barberton Mountain Land, South Africa, based on precise dating by single zircon evaporation.

PubMed

Krüner, A; Byerly, G R; Lowe, D R

1991-04-01

We report precise 207Pb/206Pb single zircon evaporation ages for low-grade felsic metavolcanic rocks within the Onverwacht and Fig Tree Groups of the Barberton Greenstone Belt (BGB), South Africa, and from granitoid plutons bordering the belt. Dacitic tuffs of the Hooggenoeg Formation in the upper part of the Onverwacht Group yield ages between 3445 +/- 3 and 3416 +/- 5 Ma and contain older crustal components represented by a 3504 +/- 4 Ma old zircon xenocryst. Fig Tree dacitic tuffs and agglomerates have euhedral zircons between 3259 +/- 5 and 3225 +/- 3 Ma in age which we interpret to reflect the time of crystallization. A surprisingly complex xenocryst population in one sample documents ages from 3323 +/- 4 to 3522 +/- 4 Ma. We suspect that these xenocrysts were inherited, during the passage of the felsic melts to the surface, from various sources such as greenstones and granitoid rocks now exposed in the form of tonalite-trondhjemite plutons along the southern and western margins of the BGB, and units predating any of the exposed greenstone or intrusive rocks. Several of the granitoids along the southern margin of the belt have zircon populations with ages between 3490 and 3440 Ma. coeval with or slightly older than Onverwacht felsic volcanism, while the Kaap Valley pluton along the northwestern margin of the belt is coeval with Fig Tree dacitic volcanism. These results emphasize the comagmatic relationships between greenstone felsic volcanic units and the surrounding plutonic suites. Some of the volcanic plutonic units contain zircon xenocrysts older than any exposed rocks. These indicate the existence of still older units, possibly stratigraphically lower and older portions of the greenstone sequence itself, older granitoid intrusive rocks, or bodies of older, unrelated crustal material. Our data show that the Onverwacht and Fig Tree felsic units have distinctly different ages and therefore do not represent a single, tectonically repeated unit as proposed by

Preliminary structural model for the southwestern part of the Michipicoten greenstone belt, Ontario

NASA Technical Reports Server (NTRS)

Mcgill, G. E.; Shrady, C. H.

1986-01-01

The southwestern part of the Michipicoten Greenstone Belt includes a 100 sq km fume kill extending northeastwards from the twon of Wawa, Ontario. Except for a strip along the Magpie River that is covered by Pleistocene gravels, outcrop in the fume kill averages about 30-50%. Within this area are all the major lithologic belts characteristic of the southwestern fourth of the Michipicoten Greenstone Belt. All of the area mapped to date lies within Chabenel Township, recently mapped at 4" = 1 mile. Following a brief reconnaissance in 1983, mapping at a scale of 1" = 400' was begun within and adjacent to the fume kill in 1984. Two objectives are sought (1) determinaion of the geometry and sequence of folding, faulting, cleavage development, and intrusion; and (2) defining and tracing lithologic packages, and evaluating the nature of the contacts between these packages. Results for objective (1) are discussed in a companion abstract; this abstract will present tentative results for objective.

Workshop on the Tectonic Evolution of Greenstone Belts (supplement containing abstracts of invited talks and late abstracts)

NASA Technical Reports Server (NTRS)

1986-01-01

Topics addressed include: greenstone belt tectonics, thermal constaints, geological structure, rock components, crustal accretion model, geological evolution, synsedimentary deformation, Archean structures and geological faults.

The Cosmos greenstone succession, Agnew-Wiluna greenstone belt, Yilgarn Craton, Western Australia: Geochemistry of an enriched Neoarchaean volcanic arc succession

NASA Astrophysics Data System (ADS)

de Joux, A.; Thordarson, T.; Fitton, J. G.; Hastie, A. R.

2014-09-01

The geodynamic setting of the Neoarchaean Eastern Goldfields Superterrane (EGS) of the Yilgarn Craton is the subject of debate. Some authors propose plume models, while others advocate variants on a subduction accretion model for the origin of mineralised greenstone belt sequences. Felsic volcanism in the Kalgoorlie Terrane, the westernmost terrane of the EGS, is considered to have a tonalite-trondhjemite-granodiorite/dacite (TTG/D) geochemical affinity. The Cosmos greenstone succession, which lies in the Agnew-Wiluna greenstone belt (AWB) of the Kalgoorlie Terrane, contains several komatiite-hosted nickel sulphide deposits, the volcanic footwall to which consists of an intercalated succession of fragmental and coherent rocks ranging in composition from basaltic andesite to rhyolite. Light rare earth elements (LREEs) and large ion-lithophile elements (LILEs) are strongly enriched relative to high field strength elements (HFSEs) across all volcanic units, and the rocks display strong positive Pb and negative Nb anomalies. These geochemical characteristics resemble closely those of modern high-K calc-alkaline to shoshonite continental arc successions. Contrasting REE, LILE and HFSE concentrations, coupled with assimilation-fractional crystallisation (AFC) modelling, shows that the intercalated dacitic and andesitic volcanic rocks within the footwall succession are not co-genetic. Xenocrystic zircons within the felsic volcanic lithologies indicate that some assimilation of older continental crust contributed to the generation of the footwall volcanic sequence. The geochemical characteristics of the Cosmos volcanic succession indicate that parental melts were derived via partial melting of enriched peridotite that had been contaminated by subducted crustal material within the mantle wedge of a subduction zone. In contrast, two younger felsic porphyry intrusions, which cross-cut the volcanic succession, have a distinct TTG/D affinity. Therefore, these intrusions are

Evidence for spreading in the lower Kam Group of the Yellowknife greenstone belt: Implications for Archaean basin evolution in the Slave Province

NASA Technical Reports Server (NTRS)

Helmstaedt, H.; Padgham, W. A.

1986-01-01

The Yellowknife greenstone belt is the western margin of an Archean turbidite-filled basin bordered on the east by the Cameron River and Beaulieu River volcanic belts (Henderson, 1981; Lambert, 1982). This model implies that rifting was entirely ensialic and did not proceed beyond the graben stage. Volcanism is assumed to have been restricted to the boundary faults, and the basin was floored by a downfaulted granitic basement. On the other hand, the enormous thickness of submarine volcanic rocks and the presence of a spreading complex at the base of the Kam Group suggest that volcanic rocks were much more widespread than indicated by their present distribution. Rather than resembling volcanic sequences in intracratonic graben structures, the Kam Group and its tectonic setting within the Yellowknife greenstone belt have greater affinities to the Rocas Verdes of southern Chile, Mesozoic ophiolites, that were formed in an arc-related marginal basin setting. The similarities of these ophiolites with some Archean volcanic sequences was previously recognized, and served as basis for their marginal-basin model of greenstone belts. The discovery of a multiple and sheeted dike complex in the Kam Group confirms that features typical of Phanerozoic ophiolites are indeed preserved in some greenstone belts and provides further field evidence in support of such a model.

Chronology of early Archaean granite-greenstone evolution in the Barberton Mountain Land, South Africa, based on precise dating by single zircon evaporation

NASA Technical Reports Server (NTRS)

Kruener, Alfred; Byerly, Gary R.; Lowe, Donald R.

1991-01-01

Precise Pb-207/Pb-206 single zircon evaporating ages are reported for low-grade felsic metavolcanic rocks within the Onverwacht and Fig Tree Groups of the Barberton Greenstone Belt (BGB), South Africa, as well as for granitoid plutons bordering the belt. Dacitic tuffs of the Hooggenoeg Formation in the upper part of the Onverwacht Group are shown to yield ages between 3445 + or - 3 and 3416 + or - 5 Ma and to contain older crustal components represented by a 3504 + or - 4 Ma old zircon xenocryst. Fig Tree dacitic tuffs and agglomerates have euhedral zircons between 3259 + or - 3 Ma in age which are interpreted to reflect the time of crystallization. The comagmatic relationships between greenstone felsic volcanic units and the surrounding plutonic suites are keynoted. The data adduced show that the Onverwacht and Fig Tree felsic units have distinctly different ages and thus do not constitute a single, tectonically repeated unit as proposed by others. It is argued that conventional multigrain zircon dating may not accurately identify the time of felsic volcanic activity in ancient greenstones, and that the BGB in the Kaapval craton of southern Africa and greenstones in the Pilbara Block of Western Australia may have been part of a larger crustal unit in early Archaean times.

Crustal shortening and thickening in Neoarchean granite-greenstone belts: A case study from the link between the ∼2.7 Ga Elu and Hope Bay belts, northeast Slave craton, Canada

NASA Astrophysics Data System (ADS)

Mvondo, Hubert; Lentz, Dave; Bardoux, Marc

2017-11-01

The Elu Link between the ∼2.7 Ga Hope Bay and Elu belts in the northeast Bathurst Block of the Slave craton comprises supracrustal and intrusive rocks variably deformed by three tectono-metamorphic events (D1-D3). The geometry of D1 structures formed during prograde metamorphism is uncertain, because of subsequent overprint. D2 occurred in two stages predating (D2a) and postdating (D2b) peak metamorphism. D1 and D2a were thrusting events inferred from peak metamorphic pressures of ∼6.7 kbar (670 MPa) retained by a garnet orthogneiss. The latter is diagnostic of thrust tectonism in Archean granite-greenstone belts with no characteristic thrust faults. Unlike D2a, D2b was a vertical general flattening event prevailing during the formation of magmatic domes and interdomal folds that form the main strain patterns of the belts. This was followed by the formation of buckled F3 folds associated with D3 vertical constriction. The switch from thrust to vertical tectonics during peak metamorphism and subsequent deformation resulted in intense recrystallization that explains the poor preservation and scarcity of early-formed shears, including thrust zones. A tectonic process, combining D1+D2a thrust stacking, sagduction, and vertical stretching during D2b and D3, is suggested to explain crustal thickening in the Elu Link and terrains of similar ages.

In search of ancient biomarkers: Using femtosecond - Laser Desorption Post Ionization - Mass Spectrometry (fs-LDPI-MS) to map organic compounds within ca. 2.7 Ga samples from the Abitibi greenstone belt, Ontario, Canada

NASA Astrophysics Data System (ADS)

Pasterski, M. J.; Barry, G.; Hanley, L.; Kenig, F. P. H.

2016-12-01

One of the major challenges within the field of organic geochemistry is to determine whether an observed biomarker signature was emplaced during sedimentation (indigenous), after sedimentation via the post-depositional migration of fluids (non-indigenous), or during sampling, storage, or analysis (contaminant). Current geochemical techniques (e.g. gas chromatography-mass spectrometry, GC-MS and GCxGC-MS) can effectively determine the composition and structure of the organic constituents of a sample. However, because of the multiple preparatory steps necessary prior to GC-MS analysis (sample crushing, solvent extraction, organic fraction separation) it is impossible to precisely determine the spatial relationship between the host sample and the organic molecules within. We used an MS imaging method developed by Prof. Luke Hanley at the University of Illinois at Chicago, femtosecond-laser desorption post ionization-MS (fs-LDPI-MS), to map the organics within previously characterized ca.2.7 billion year old (Ga) metasediments from the Abitibi greenstone belt near Timmins, ON, Canada. We then compared the MS images to petrographic observations that displayed the distribution of mineral species with well constrained mineralization ages as well as fluid inclusions within the samples. Fluid inclusions are formed during mineralization and have the ability to remain intact over long timescales (up to billions of years), protecting the fluids inside from the introduction of non-indigenous and contaminant biomarkers. Although migrating post-depositional fluids can remineralize sediments, fluid inclusions associated with secondary additions are focused along grain boundaries and microfractures (secondary inclusions), thus, inclusions which are located within grain boundaries can be considered primary and the age of their formation can be determined relative to the host rock. Preliminary results indicate that previously observed biomarkers may be linked to a series of

Immature intra-oceanic arc-type volcanism on the Izanagi Plate revealed by the geochemistry of the Daimaruyama greenstones in the Hiroo Complex, southern Hidaka Belt, central Hokkaido, Japan

NASA Astrophysics Data System (ADS)

Yamasaki, Toru; Nanayama, Futoshi

2018-03-01

The Izanagi Plate is assumed to have underlain the western Panthalassa Ocean to the east of Eurasia, and to have been subducting under the Eurasian continent. Although the Izanagi Plate has been lost to subduction, the subduction complexes of the circum-Panthalassa continental margins provide evidence that subduction-related volcanism occurred within the Panthalassa Ocean, and not just along its margins. The Daimaruyama mass is a kilometer-sized allochthonous greenstone body in the Hiroo Complex in the southeastern part of the Nakanogawa Group in the southern Hidaka Belt, northern Japan. The Hiroo Complex is a subduction complex that formed within the Paleo-Kuril arc-trench system at 57-48 Ma. The Daimaruyama greenstones consist mainly of coarse volcaniclastic rocks with lesser amount of lava. Red bedded chert, red shale, and micritic limestone are also observed as blocks associated with the greenstones. The presence of Early Cretaceous (Aptian-Albian) radiolaria in red bedded cherts within the greenstones indicates that the Daimaruyama greenstones formed after this time. An integrated major and trace element geochemical dataset for whole-rocks and clinopyroxenes of the greenstones indicates a calc-alkaline magmatic trend with low TiO2 contents and increases in SiO2 and decreases in FeO* with increasing differentiation. Negative anomalies of Nb, Ta, and Ti in normal mid-ocean-ridge basalt type normalized patterns are interpreted as "arc-signatures". Using "rhyolite-MELTS", we conducted a numerical simulation of magmatic differentiation under conditions of 1.5 kbar and H2O = 3 wt% to reproduce the liquid line of descent of the Daimaruyama greenstones. Back-calculations of the equilibrium melt compositions from the trace element chemistry of the clinopyroxenes generally agree with the whole-rock rare earth element compositions of the Daimaruyama greenstones, therefore providing support for the conditions used for the rhyolite-MELTS calculations as well as the actual

Structure and kinematics of a major tectonic contact, Michipicoten greenstone belt, Ontario

NASA Technical Reports Server (NTRS)

Mcgill, George E.

1992-01-01

The Michipicoten greenstone belt, Ontario, experienced a complex history of folding, faulting, and fabric development. Near Wawa, a major east-west contact, here named the Steep Hill Falls (SHF) contact, extends entirely across the belt. The SHF contact is both an angular unconformity and a fault and is interpreted to be a regionally significant tectonic contact separating distinct northern and southern terranes, both of which include volcanic rocks of probable island-arc origin. The amount of horizontal transport involved in bringing the two terranes together along the SHF contact is not known. Mapping and structural analysis suggest that regionally significant horizontal displacements took place, with movement vectors that changed with time. Early faults, folds, and fabrics imply north-south to northeast-southwest (with respect to present directions) convergence, with a vergence reversal occurring during this complex event. The most likely models infer early south vergence and later north vergence. Transecting the earliest structures are younger (but still Archean) northeast-striking steep cleavages with associated upright folds that may relate to northwest-southeast assembly of the Superior Province craton. The craton assembly event thus involved a transport direction at a high angle to that inferred for the earlier assembly of the Michipicoten greenstone belt.

Deformational sequence of a portion of the Michipicoten greenstone belt, Chabanel Township, Ontario

NASA Technical Reports Server (NTRS)

Shrady, C. H.; Mcgill, G. E.

1986-01-01

Detailed mapping at a scale of one inch = 400 feet is being carried out within a fume kill, having excellent exposure, located in the southwestern portion of the Michipicoten Greenstone Belt near Wawa, Ontario. The rocks are metasediments and metavolcanics of lower greenschist facies. U-Pb geochronology indicates that they are at least 2698 + or - 11 Ma old. The lithologic packages strike northeast to northwest, but the dominant strike is approximately east-west. Sedimentary structures and graded bedding are well preserved, aiding in the structural interpretation of this multiply deformed area. At least six phases of deformation within a relatively small area of the Michipicoten Greenstone Belt have been tentatively identified. These include the following structural features in approximate order of occurrence: (0) soft-sediment structures; (1) regionally overturned rocks, flattened pebbles, bedding parallel cleavage, and early, approximately bedding parallel faults; (2) northwest to north striking cleavage; (3) northeast striking cleavage and associated folds, and at least some late movement on approximately bedding parallel faults; (4) north-northwest and northeast trending faults; and (5) diabase dikes and associated fracture cleavages. Minor displacement of the diabase dikes occurs on faults that appear to be reactivated older structures.

Sedimentary environment and tectonic deformations of the Neoproterozoic Iron formation at the Wadi El-Dabbah greenstone sequence, Central Eastern Desert, Egypt

NASA Astrophysics Data System (ADS)

Kiyokawa, S.; Suzuki, T.; Ikehara, M.; Horie, K.; Takehara, M.; Abd-Elmonem, H.; Dawoud, A. D. M.; El-Hasan, M. M.

2017-12-01

El-Dabbah area Central Eastern Desert of the Nubia Shield preserved Neoproterozoic lower green schist faces volcaniclastics greenstone sequence and covered strike-slip deformation related subaerial sedimentary sequence (Hammamat Group). The volcaniclastics greenstone sequence (El-Dabbah Formation) preserved several iron beds bearing well stratified sequence. Four tectonic deformation identified as this area; thrust deformation (D1), strike-slip deformation with transtension normal fault and strong left-lateral shear (D2), subaerial pull apart sediments basin formed strike-slip deformations (D3), and extensional deformation after the Hammamat Group sedimentation (D4). New age data from intrusions identified about 638 Ma white granite and about 660 Ma quartz porphyry. Based on the detail mapping, we reconstruct more than 5000m thick volcano sedimentary succession. At least, 10 iron rich sections were identified within 3500m thick volcano-sedimentary sequence. There are 14 iron formation sequence identified in this greenstone sequence. Each Iron sequences are bedded with greenish-black shales within massive volcaniclastics and lava flow. Iron formation is formed mostly fine grain magnetite deposited within volcanic mudstone and siltstone with gradual distribution. Timing of this iron sediment is identified within Sturtian glaciation (730-700Ma). However, there is no geological direct support evidence in the Snowball earth event at this greenstone sequence. The volcanic activities at this ocean already produced many Fe2+ to ocean water. Repeated iron precipitation occur during volcanic activity interphase period which produced oxidation of iron and produce oxyhydroxide with mud-silt sediment at bottom of ocean.

Nitrogen cycling in 2.7 Ga oceans

NASA Astrophysics Data System (ADS)

Yang, J.; Zerkle, A.; Grassineau, N.; Nisbet, E.; Mettam, C.; Izon, G. J.; Morag, H.; Anthony, M.; Newton, J.; Boyce, A.

2016-12-01

A growing body of geochemical evidence suggests that localized oxygenation of the surface earth must have begun much earlier than the GOE ( 2.4 Ga). This could have triggered the emergence of the aerobic biogeochemical cycle of nitrogen (N), an essential nutrient for all organisms. However, the timing of this revolutionary transition is poorly known. Some sediments from 2.7 Ga possess exceptionally high enrichment of 15N. Whether these values are linked to the onset of the aerobic N cycle[1], or reflective of alkaline lakes on land[2], has been in dispute. To explore this, we are investigating one of the best-preserved unambiguously marine Achaean successions from the Belingwe Greenstone Belt, in Zimbabwe. We are focusing on nearly pristine sediments from the 2.7 Ga Manjeri Formation, which span both shallow and deep-water environments, preserving organic-rich shales and some of the oldest and most well-preserved stromatolites. The depositional conditions for this succession are further constrained by iron speciation data and sulfur isotopes, which show a redox transition from ferruginous to oxic environments from older to younger sediments. Nitrogen isotopes in these sediments will constrain the global nature of the extremely 15N-enriched values, and test hypotheses for the Neoarchean nitrogen cycle in a non-disputed marine setting. [1] Thomazo et al. (2011) Geobiology; [2] Stüeken et al. (2015) EPSL.

200 million years of komatiite evolution in the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Christoph, Robin; Arndt, Nick; Byerly, Gary; Puchtel, Igor; Blichert-Toft, Janne; Wilson, Allan

2010-05-01

Komatiites with complex and contrasting chemical compositions erupted throughout the 200 m.y. history of the Barberton greenstone belt in South Africa. The oldest well-preserved examples, from the ca. 3.5 Ga Komati Formation, display a range of volcanic structures, from thin differentiated spinifex-textured flows to much thicker flows or sills composed mainly of massive olivine cumulate. Pyroxene spinifex layers that cap the latter units indicate crystallization from komatiitic basaltic liquids. Although some rare, unusually coarse, vesicular, completely serpentinized units may have contained a small fraction of water, most of the flows are essentially anhydrous. Two geochemical types are present in the Komati Fm; Al-depleted komatiites with moderately enriched LREE and depleted HREE, and Al-undepleted komatiites with near-chondritic REE ratios. Komatiites from the 3.2 Ga Mendon and Weltevreden Fm display two patterns -Al-undepleted with near-chondritic REE ratios and Al-enriched with extremely low REE concentrations and marked depletion of LREE. In many units, both geochemical types are present. The Al- and HREE-depletion of Komati Fm magmas indicates that residual garnet was retained in the mantle source and their high MgO contents require that melting was at great depth. Up to 30% batch melting at 300 km depth is indicated; the high percentage of batch melting is possible because melt is neutrally buoyant at these depths. The Al-undepleted to enrichedmagmas formed by up to 50% cumulative fractional melting that terminated at shallower depth. The. presence of both types inseveral units points to complex dynamics in the mantle plumes that yielded these magmas. Epsilon Nd in all Barbertonkomatiites ranges from 0 to +2; epsilon Hf from +2 to +7; gamma Os from 0 to +3.7. The combination of fractionated REE, positive epsilon Nd and Hf, and near-chondritic Os in certain komatiites is attributed to differentiation of the komatiite sourcevery early in Earth history

Terrestrial Biomarkers for Early Life on Earth as Analogs for Possible Martian Life Forms: Examples of Minerally Replaced Bacteria and Biofilms From the 3.5 - 3.3-Ga Barberton Greenstone Belt, South Africa

NASA Technical Reports Server (NTRS)

Westall, F.; McKay, D. S.; Gibson, E. K.; deWit, M. J.; Dann, J.; Gerneke, D.; deRonde, C. E. J.

1998-01-01

The search for extraterrestrial life and especially martian life hinges on a variety of methods used to identify vestiges of what we could recognize as life, including chemical signatures, morphological fossils, and biogenic precipitates. Although the possibility of extant life on Mars (subsurface) is being considered, most exploration efforts may be directed toward the search for fossil life. Geomorphological evidence points to a warmer and wetter Mars early on in its history, a scenario that encourages comparison with the early Earth. For this reason, study of the early terrestrial life forms and environment in which they lived may provide clues as to how to search for extinct martian life. As a contribution to the early Archean database of terrestrial microfossils, we present new data on morphological fossils from the 3.5-3.3-Ga Barberton greenstone belt (BGB), South Africa. This study underlines the variety of fossil types already present in some of the oldest, best-preserved terrestrial sediments, ranging from minerally replaced bacteria and bacteria molds of vaRious morphologies (coccoid, coccobacillus, bacillus) to minerally replaced biofilm. Biofilm or extracellular polymeric substance (EPS) is produced by bacteria and appears to be more readily fossilisable than bacteria themselves. The BGB fossils occur in shallow water to subaerial sediments interbedded with volcanic lavas, the whole being deposited on oceanic crust. Penecontemporaneous silicification of sediments and volcanics resulted in the chertification of the rocks, which were later subjected to low-grade metamorphism (lower greenschist).

Succession of structural events in the Goren greenstone belt (Burkina Faso): Implications for West African tectonics

NASA Astrophysics Data System (ADS)

Hein, Kim A. A.

2010-02-01

Ten years after field investigations in the SE Goren greenstone belt (GGB) of Burkina Faso by the Sanmatenga J.V., sponsored field studies conducted in 2007 have significantly enhanced structural datasets. The studies in 2007 were conducted across an expanded area of the GGB that included both southwestern and northeastern domains, and portions of the Pissila batholith to the west of the GGB. A revision of tectonic models proposed by Hein et al. [Hein, K.A.A., Morel, V., Kagoné, O., Kiemde, F., Mayes, K., 2004. Birimian lithological succession and structural evolution in the Goren Segment of the Boromo-Goren Greenstone Belt, Burkina Faso. Journal of African Earth Sciences 39, 1-23] is now possible. Three deformation events characterise the Goren greenstone belt. The deformation, D1 (previously D3) resulted in the formation of NW to NNW-trending steeply-dipping dextral-reverse shear zones folds and a penetrative S1-C schistosity that formed during a period of NE-SW shortening. The event is termed the Tangaean Event because it can be correlated across NE Burkina Faso in the Boromo, Bouroum, Yalago and Oudalan-Gorouol greenstone belts. The deformation, D2 (previously D2) resulted in the progressive development of NNE to NE-trending macroscopic to mesoscopic folds and a penetrative axial planar cleavage (S2), which was followed by the formation of dextral- and sinistral-reverse shears and a pervasive schistosity (S2-C). The first-order crustal-scale Sabce Shear Zone, which traverses the northern portion of the study area, is associated with macroscopic anticlockwise drag rotation of NW to NNW-trending D1 shears and folds: (the macroscopic fold was previously classified as D1). D2 in the GGB corresponds with the Eburnean Orogeny at 2130-1980 Ma, as described by [Feybesse, J.-L., Billa, M., Guerrot, C., Duguey, E., Lescuyer, J.-L, Milesi, J.-P., Bouchot, V., 2006, The paleoproterozoic Ghanian province: geodynamic model and ore controls, including regional stress

Intermediate P/T-type regional metamorphism of the Isua Supracrustal Belt, southern west Greenland: The oldest Pacific-type orogenic belt?

NASA Astrophysics Data System (ADS)

Arai, Tatsuyuki; Omori, Soichi; Komiya, Tsuyoshi; Maruyama, Shigenori

2015-11-01

The 3.7-3.8 Ga Isua Supracrustal Belt (ISB), southwest Greenland, might be the oldest accretionary complex on Earth. Regional metamorphism of the ISB has a potential to constrain the tectonothermal history of the Earth during the Eoarchean. Chemical and modal analyses of metabasite in the study area (i.e., the northeast part of the ISB) show that the metamorphic grade increases from greenschist facies in the northern part of the study area to amphibolite facies in the southern part. To determine the precise metamorphic P-T ranges, isochemical phase diagrams of minerals of metabasite were made using Perple_X. A synthesis of the estimated metamorphic P-T ranges of the ISB indicates that both the metamorphic pressure and temperature increase systematically to the south in the study area from 3 kbar and 380 °C to 6 kbar and 560 °C. The monotonous metamorphic P-T change suggests that the northeast part of the ISB preserves regional metamorphism resulting from the subduction of an accretionary complex although the ISB experienced metamorphic overprints during the Neoarchean. Both the presence of the regional metamorphism and an accretionary complex having originating at subduction zone suggest that the ISB may be the oldest Pacific-type orogenic belt. The progressive metamorphism can be considered as a record of intermediate-P/T type geothermal gradient at the subduction zone in the Eoarchean. Intermediate-P/T type geothermal gradient is typical at the current zones of subducting young oceanic crust, such as in the case of the Philippine Sea Plate in the southwest part of Japan. Considering the fact that almost all metamorphisms in the Archean are greenschist-amphibolite facies, the intermediate-P/T type geothermal gradient at the ISB might have been worldwide in the Archean. This would indicate that the subduction of young micro-plates was common because of the vigorous convection of hot mantle in the Archean.

Early trace of life from 3.95 Ga sedimentary rocks in Labrador, Canada

NASA Astrophysics Data System (ADS)

Tashiro, Takayuki; Ishida, Akizumi; Hori, Masako; Igisu, Motoko; Koike, Mizuho; Méjean, Pauline; Takahata, Naoto; Sano, Yuji; Komiya, Tsuyoshi

2017-09-01

The vestiges of life in Eoarchean rocks have the potential to elucidate the origin of life. However, gathering evidence from many terrains is not always possible, and biogenic graphite has thus far been found only in the 3.7-3.8 Ga (gigayears ago) Isua supracrustal belt. Here we present the total organic carbon contents and carbon isotope values of graphite (δ13Corg) and carbonate (δ13Ccarb) in the oldest metasedimentary rocks from northern Labrador. Some pelitic rocks have low δ13Corg values of -28.2, comparable to the lowest value in younger rocks. The consistency between crystallization temperatures of the graphite and metamorphic temperature of the host rocks establishes that the graphite does not originate from later contamination. A clear correlation between the δ13Corg values and metamorphic grade indicates that variations in the δ13Corg values are due to metamorphism, and that the pre-metamorphic value was lower than the minimum value. We concluded that the large fractionation between the δ13Ccarb and δ13Corg values, up to 25‰, indicates the oldest evidence of organisms greater than 3.95 Ga. The discovery of the biogenic graphite enables geochemical study of the biogenic materials themselves, and will provide insight into early life not only on Earth but also on other planets.

Early trace of life from 3.95 Ga sedimentary rocks in Labrador, Canada.

PubMed

Tashiro, Takayuki; Ishida, Akizumi; Hori, Masako; Igisu, Motoko; Koike, Mizuho; Méjean, Pauline; Takahata, Naoto; Sano, Yuji; Komiya, Tsuyoshi

2017-09-27

The vestiges of life in Eoarchean rocks have the potential to elucidate the origin of life. However, gathering evidence from many terrains is not always possible, and biogenic graphite has thus far been found only in the 3.7-3.8 Ga (gigayears ago) Isua supracrustal belt. Here we present the total organic carbon contents and carbon isotope values of graphite (δ 13 C org ) and carbonate (δ 13 C carb ) in the oldest metasedimentary rocks from northern Labrador. Some pelitic rocks have low δ 13 C org values of -28.2, comparable to the lowest value in younger rocks. The consistency between crystallization temperatures of the graphite and metamorphic temperature of the host rocks establishes that the graphite does not originate from later contamination. A clear correlation between the δ 13 C org values and metamorphic grade indicates that variations in the δ 13 C org values are due to metamorphism, and that the pre-metamorphic value was lower than the minimum value. We concluded that the large fractionation between the δ 13 C carb and δ 13 C org values, up to 25‰, indicates the oldest evidence of organisms greater than 3.95 Ga. The discovery of the biogenic graphite enables geochemical study of the biogenic materials themselves, and will provide insight into early life not only on Earth but also on other planets.

Inferred Primary Compositions of Archean Spherules Formed by the Condensation of an Impact-produced Rock Vapor Cloud, Barberton Greenstone Belt, South Africa

NASA Technical Reports Server (NTRS)

Krull, A. E.; Lowe, D. R.; Byerly, G. R.

2003-01-01

Based on the lunar cratering record, impacts were larger and more frequent on the early Earth than they are today. There is no persevered record of these early terrestrial impacts because rocks of this age have been obliterated by tectonism and erosion. The oldest known evidence of impacts on Earth lies in four beds (S1, S2, S3 and S4) in the Barberton Greenstone Belt (BGB), South Africa, ranging in age from about 3.24 to 3.47 Ga. These beds are composed in large part of sand-sized spherical particles, termed spherules, that are thought to have formed by the condensation of rock vapor clouds ejected above the atmosphere as a result of large impacts. Spherule beds S2 and S3 are both about 20 cm thick where composed entirely of fall-deposited spherules and up to a meter thick where spherules are mixed with locally derived debris. The diameters the bolides have been estimated to be between 20 and 50 km, based on bed thickness, size of the largest spherules, Ir fluence and extraterrestrial Cr.

Atmospheric record in the Hadean Eon from multiple sulfur isotope measurements in Nuvvuagittuq Greenstone Belt (Nunavik, Quebec).

PubMed

Thomassot, Emilie; O'Neil, Jonathan; Francis, Don; Cartigny, Pierre; Wing, Boswell A

2015-01-20

Mass-independent fractionation of sulfur isotopes (S-MIF) results from photochemical reactions involving short-wavelength UV light. The presence of these anomalies in Archean sediments [(4-2.5 billion years ago, (Ga)] implies that the early atmosphere was free of the appropriate UV absorbers, of which ozone is the most important in the modern atmosphere. Consequently, S-MIF is considered some of the strongest evidence for the lack of free atmospheric oxygen before 2.4 Ga. Although temporal variations in the S-MIF record are thought to depend on changes in the abundances of gas and aerosol species, our limited understanding of photochemical mechanisms complicates interpretation of the S-MIF record in terms of atmospheric composition. Multiple sulfur isotope compositions (δ(33)S, δ(34)S, and δ(36)S) of the >3.8 billion-year-old Nuvvuagittuq Greenstone Belt (Ungava peninsula) have been investigated to track the early origins of S-MIF. Anomalous S-isotope compositions (Δ(33)S up to +2.2‰) confirm a sedimentary origin of sulfide-bearing banded iron and silica-rich formations. Sharp isotopic transitions across sedimentary/igneous lithological boundaries indicate that primary surficial S-isotope compositions have been preserved despite a complicated metamorphic history. Furthermore, Nuvvuagittuq metasediments recorded coupled variations in (33)S/(32)S, (34)S/(32)S, and (36)S/(32)S that are statistically indistinguishable from those identified several times later in the Archean. The recurrence of the same S-isotope pattern at both ends of the Archean Eon is unexpected, given the complex atmospheric, geological, and biological pathways involved in producing and preserving this fractionation. It implies that, within 0.8 billion years of Earth's formation, a common mechanism for S-MIF production was established in the atmosphere.

Igneous and tectonic evolution of the Batchawana Greenstone Belt, Superior Province: a U-Pb zircon and titanite study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Corfu, F.; Grunsky, E.C.

1987-01-01

U-Pb isotopic dating of zircon and titanite from all the major litho-tectonic units of the Batchawana belt, an Archean greenstone belt of the Abitibi Subprovince of the Superior Province in Canada, shows that the belt evolved during a period of about 60 Ma between about 2730 and 2670 Ma ago. Subsequent deformation of the supracrustal sequences produced isoclinal folding and culminated in metamorphism ranging from lower greenschist to amphibolite facies and anatexis related to the intrusion of syn- to late-tectonic plutons, four phases of which have ages of 2678 +4/-2 Ma, 2677 +/- 2 Ma, 2677 +/- 3 Ma, andmore » 2676 +/- 2 Ma. Two post-tectonic granitoid plutons in the center of the belt were intruded 2674 +/- 3 Ma and 2673 +/- 5 Ma ago and were followed by the emplacement of a composite mafic to felsic intrusion; a monzonite and a hornblendite from this intrusion yield identical ages of 2668 +/- 2 Ma. Titanite ages are identical or younger than the ages of coexisting zircons and reflect regional metamorphism and post-tectonic plutonism, but in a few cases they are younger and may record increased fluid activity along faults and the intrusion of mafic dikes. U-Pb zircon systematics, together with age and lithological relationships, suggests that the greenstone belt formed in an oceanic environment from material derived initially mainly from the mantle. Subsequent melting at the base of the thickening volcanic succession produced intermediate to felsic volcanic rocks, tonalites, and later granodioritic to granitic plutons leading to the final consolidation of the granite-greenstone terrain. 47 references.« less

The 3.26-3.24 Ga Barberton asteroid impact cluster: Tests of tectonic and magmatic consequences, Pilbara Craton, Western Australia

NASA Astrophysics Data System (ADS)

Glikson, Andrew; Vickers, John

2006-01-01

The location in the Barberton Greenstone Belt (Kaapvaal Craton) of ∼3.26-3.24 Ga asteroid impact ejecta units at, and immediately above, a sharp break between a > 12 km-thick mafic-ultramafic volcanic crust (Onverwacht Group ∼3.55-3.26 Ga, including the ∼3.298 > 3.258 Ga Mendon Formation) and a turbidite-felsic volcanic rift-facies association (Fig Tree Group ∼3.258-3.225 Ga), potentially represents the first documented example of cause-effect relations between extraterrestrial bombardment and major tectonic and igneous events [D.R. Lowe, G.R. Byerly, F. Asaro, F.T. Kyte, Geological and geochemical record of 3400 Ma old terrestrial meteorite impacts, Science 245 (1989) 959-962; D.R. Lowe, G.R. Byerly, F.T. Kyte, A. Shukolyukov, F. Asaro, A. Krull, Spherule beds 3.47-3.34 Ga-old in the Barberton greenstone belt, South Africa: a record of large meteorite impacts and their influence on early crustal and biological evolution, Astrobiology 3 (2003) 7-48; A.Y. Glikson, The astronomical connection of terrestrial evolution: crustal effects of post-3.8 Ga mega-impact clusters and evidence for major 3.2 ± 0.1 Ga bombardment of the Earth-Moon system, J. Geodyn. 32 (2001) 205-229]. Here we correlate this boundary with a contemporaneous break and peak magmatic and faulting events in the Pilbara Craton, represented by the truncation of a 3.255-3.235 Ga-old volcanic sequence (Sulphur Springs Group-SSG) by a turbidite-banded iron formation-felsic volcanic association (Pincunah Hill Formation, basal Gorge Creek Group). These events are accompanied by ∼3.252-3.235 Ga granitoids (Cleland plutonic suite). The top of the komatiite-tholeiite-rhyolite sequence of the SSG is associated with a marker chert defined at 3.238 ± 3-3.235 ± 3 Ga, abruptly overlain by an olistostrome consisting of mega-clasts of felsic volcanics, chert and siltstone up to 250 × 150 m-large, intercalated with siliciclastic sedimentary rocks and felsic volcanics (Pincunah Hill Formation-basal Gorge

The western Wabigoon Subprovince, Superior Province, Canada: Archean greenstone succession in rifted basement complex

NASA Technical Reports Server (NTRS)

Edwards, G. R.; Davis, D. W.

1986-01-01

The Wabigoon Subprovince, interposed between the predominantly metasedimentary-plutonic and gneissic English River and Quetico Subprovinces to the north and south respectively, exposed Archean greenstone and granitoid rocks for a strike length of greater than 700 km. Based on predominating rock types, the western part of the subprovince is divided into two terrains: the northern Wabigoon volcano-sedimentary and pluonic terrain (NWW) and the Wabigoon Diapiric Axis terrain (WDA). Both the NWW and WDA are described according to volcanic sequence, geological faults, chemical composition and evolutionary history.

A new model for early Earth: heat-pipe cooling

NASA Astrophysics Data System (ADS)

Webb, A. G.; Moore, W. B.

2013-12-01

In the study of heat transport and lithospheric dynamics of early Earth, current models depend upon plate tectonic and vertical tectonic concepts. Plate tectonic models adequately account for regions with diverse lithologies juxtaposed along ancient shear zones, as seen at the famous Eoarchean Isua supracrustal belt of West Greenland. Vertical tectonic models to date have involved volcanism, sub- and intra-lithospheric diapirism, and sagduction, and can explain the geology of the best-preserved low-grade ancient terranes, such as the Paleoarchean Barberton and Pilbara greenstone belts. However, these models do not offer a globally-complete framework consistent with the geologic record. Plate tectonics models suggest that paired metamorphic belts and passive margins are among the most likely features to be preserved, but the early rock record shows no evidence of these terranes. Existing vertical tectonics models account for the >300 million years of semi-continuous volcanism and diapirism at Barberton and Pilbara, but when they explain the shearing record at Isua, they typically invoke some horizontal motion that cannot be differentiated from plate motion and is not a salient feature of the lengthy Barberton and Pilbara records. Despite the strengths of these models, substantial uncertainty remains about how early Earth evolved from magma ocean to plate tectonics. We have developed a new model, based on numerical simulations and analysis of the geologic record, that provides a coherent, global geodynamic framework for Earth's evolution from magma ocean to subduction tectonics. We hypothesize that heat-pipe cooling offers a viable mechanism for the lithospheric dynamics of early Earth. Our numerical simulations of heat-pipe cooling on early Earth indicate that a cold, thick, single-plate lithosphere developed as a result of frequent volcanic eruptions that advected surface materials downward. The constant resurfacing and downward advection caused compression as the

Late Archean intermediate-felsic magmatism of the South Vygozersky and Kamennozersky greenstone structures of Central Karelia

NASA Astrophysics Data System (ADS)

Myskova, T. A.; Zhitnikova, I. A.; L'vov, P. A.

2015-07-01

The geochemistry and zircon geochronology (U-Pb, SHRIMP-II) of Late Archean intermediate-felsic dikes and plagiogranites of the Shilossky massif of the South Vygozersky and Kamennozersky greenstone belts of Central Karelia were studied. Subvolcanic rocks of the dike complex vary in composition from andesitobasalts to rhyolites, in structural-textural peculiarities, and in the formation age, from 2862 ± 8 to 2785 ± 15 Ma. Compositionally and geochronologically (2853 ± 11 Ma), plagiogranites of the Shilossky massif of the South Vygozersky greenstone belts are close to the most ancient dacite and granodiorite porphyry dikes. Dikes intruded synchronously with intrusion of plagiogranites over a period of at least 70 m.y. Geochronologically, subvolcanic rocks of the dike complex and plagiogranites of the Shilossky massif are similar to granitoids of the TTG assemblages of I- and M-type granites. The Sm-Nd model age of some dikes (2970-2880 Ma) is close to the age of rock crystallization, which is evidence in favor of juvenile origin of magma. Dikes with more ancient model age (3050 Ma) are presumed to contain crustal material. Variations in age and ɛNd (from -2.7 to +2.9) indicate the absence of a unified magmatic source.

Petrochronology in constraining early Archean Earth processes and environments: Barberton greenstone belt, South Africa

NASA Astrophysics Data System (ADS)

Grosch, Eugene

2017-04-01

Analytical and petrological software developments over the past decade have seen rapid innovation in high-spatial resolution petrological techniques, for example, laser-ablation ICP-MS, secondary ion microprobe (SIMS, nano-SIMS), thermodynamic modelling and electron microprobe microscale mapping techniques (e.g. XMapTools). This presentation will focus on the application of petrochronology to ca. 3.55 to 3.33 billion-year-old metavolcanic and sedimentary rocks of the Onverwacht Group, shedding light on the earliest geologic evolution of the Paleoarchean Barberton greenstone belt (BGB) of South Africa. The field, scientific drilling and petrological research conducted over the past 8 years, aims to illustrate how: (a) LA-ICP-MS and SIMS U-Pb detrital zircon geochronology has helped identify the earliest tectono-sedimentary basin and sediment sources in the BGB, as well as reconstructing geodynamic processes as early as ca. 3.432 billion-years ago; (b) in-situ SIMS multiple sulphur isotope analysis of sulphides across various early Archean rock units help to reconstruct atmospheric, surface and subsurface environments on early Archean Earth and (c) the earliest candidate textural traces for subsurface microbial life can be investigated by in-situ LA-ICP-MS U-Pb dating of titanite, micro-XANES Fe-speciation analysis and metamorphic microscale mapping. Collectively, petrochronology combined with high-resolution field mapping studies, is a powerful multi-disciplinary approach towards deciphering petrogenetic and geodynamic processes preserved in the Paleoarchean Barberton greenstone belt of South Africa, with implications for early Archean Earth evolution.

Could borate have played a role in the RNA World?

NASA Astrophysics Data System (ADS)

Grew, E. S.; Bada, J. L.; Hazen, R. M.

2012-12-01

Two scenarios have been proposed for boron to play a critical role in the stabilization of ribose and other sugars in the ribonucleic acid (RNA) World, >3.8 Ga ago. One scenario envisages oligomeric RNA being synthesized in subaerial intermountane desert valleys in which groundwater was enriched in borate from breakdown of tourmaline (Benner et al. 2012 doi: 10.1021/ar200332w). In the alternative scenario, borates are enriched in hydrothermal environments (<150°C) in oceanic crust where ferromagnesian minerals are altered to brucite, serpentine and other minerals that can extract borate from the circulating seawater (Holm et al. 2006 doi:10.1186/1467-4866-7-7). Both scenarios presume that (1) B concentrations in non-marine water or sea water were about the same at >3.8 Ma as they are today and (2) plate tectonics was the prevailing regime. The postulated non-marine borate deposits would have been associated with continental collision and subduction with volcanism releasing B, whereas in the second scenario, ocean floor caught up in an early phase of subduction is considered a favorable site for borate formation. Because borate deposits are typically ephemeral and poorly preserved, the lack of evidence in the geologic record for these scenarios does not invalidate them. For example, the oldest reported non-marine borate deposits analogous to the type postulated in first scenario are only 20 Ma, but metamorphosed borates of Precambrian age have been interpreted to have non-marine evaporite precursors, the oldest being 2.4-2.1 Ga in the Liaoning-Jilin area, China. The first B minerals so far reported in the geologic record are metamorphic dravite-schorl tourmalines in the 3.7-3.8 Ga Isua supracrustal belt (southern West Greenland), where there is good evidence for seafloor spreading and subduction. The precursors to the Isua tourmalines are reported to include B-bearing marine clay minerals and detrital tourmaline. The relatively high Li contents in zircon from Jack

Early Life on Earth: the Ancient Fossil Record

NASA Astrophysics Data System (ADS)

Westall, F.

2004-07-01

The evidence for early life and its initial evolution on Earth is lin= ked intimately with the geological evolution of the early Earth. The environment of the early Earth would be considered extreme by modern standards: hot (50-80=B0C), volcanically and hydrothermally active, a= noxic, high UV flux, and a high flux of extraterrestrial impacts. Habitats = for life were more limited until continent-building processes resulted in= the formation of stable cratons with wide, shallow, continental platforms= in the Mid-Late Archaean. Unfortunately there are no records of the first appearance of life and the earliest isotopic indications of the exist= ence of organisms fractionating carbon in ~3.8 Ga rocks from the Isua greenst= one belt in Greenland are tenuous. Well-preserved microfossils and micro= bial mats (in the form of tabular and domical stromatolites) occur in 3.5-= 3.3 Ga, Early Archaean, sedimentary formations from the Barberton (South Afri= ca) and Pilbara (Australia) greenstone belts. They document life forms that = show a relatively advanced level of evolution. Microfossil morphology inclu= des filamentous, coccoid, rod and vibroid shapes. Colonial microorganism= s formed biofilms and microbial mats at the surfaces of volcaniclastic = and chemical sediments, some of which created (small) macroscopic microbi= alites such as stromatolites. Anoxygenic photosynthesis may already have developed. Carbon, nitrogen and sulphur isotopes ratios are in the r= ange of those for organisms with anaerobic metabolisms, such as methanogenesi= s, sulphate reduction and photosynthesis. Life was apparently distribute= d widely in shallow-water to littoral environments, including exposed, evaporitic basins and regions of hydrothermal activity. Biomass in t= he early Archaean was restricted owing to the limited amount of energy t= hat could be produced by anaerobic metabolisms. Microfossils resembling o= xygenic photosynthesisers, such as cyanobacteria, probably first occurred in

3.5-Ga hydrothermal fields and diamictites in the Barberton Greenstone Belt—Paleoarchean crust in cold environments

PubMed Central

de Wit, Maarten J.; Furnes, Harald

2016-01-01

Estimates of ocean temperatures on Earth 3.5 billion years ago (Ga) range between 26° and 85°C. We present new data from 3.47- to 3.43-Ga volcanic rocks and cherts in South Africa suggesting that these temperatures reflect mixing of hot hydrothermal fluids with cold marine and terrestrial waters. We describe fossil hydrothermal pipes that formed at ~200°C on the sea floor >2 km below sea level. This ocean floor was uplifted tectonically to sea level where a subaerial hydrothermal system was active at 30° to 270°C. We also describe shallow-water glacial diamictites and diagenetic sulfate mineral growth in abyssal muds. These new observations reveal that both hydrothermal systems operated in relatively cold environments and that Earth’s surface temperatures in the early Archean were similar to those in more recent times. PMID:26933677

Major and Trace Element Geochemistry and Os Isotopic Compositions of Komatiites From Dundonald Beach, Abitibi Greenstone Belt, Canada

NASA Astrophysics Data System (ADS)

Gangopadhyay, A.; Walker, R. J.; Sproule, R. A.; Lesher, C.

2003-12-01

We have examined the major and trace elements, and Os isotopic compositions of a suite of cumulate and spinifex textured komatiitic rocks from the Dundonald Beach area, part of the ˜2.7 Ga Abitibi greenstone Belt, Ontario, Canada. This suite of rocks forms a series from peridotitic komatiites (MgO ˜ 42 wt.% on a volatile-free basis) to komatiitic basalts (MgO ˜8 wt.%). Based on major element oxide ratios (e.g. Al2O3/TiO2 ˜21-26 and CaO/Al2O3 typically <= 1) and unfractionated HREE characteristics (e.g. (Gd/Yb)N ˜0.9-1.1), these rocks are similar to the spatially associated Al-undepleted komatiites from Alexo and Munro Townships. Also, these rocks are strongly LREE-depleted ((La/Sm)N = 0.41-0.67; (Ce/Yb)N = 0.41-0.70)) and have variable total REE (4-22 ppm). A strong negative correlation between Mg# and total REEs suggests that the REE patterns of these rocks are primary features of their mantle source. The Re-Os isotope results for whole-rock komatiites and chromite separates from a single flow yield a model 3 isochron age of 2606 +/- 55 Ma. This age is slightly younger ( ˜50 Ma) compared to the U-Pb zircon ages of the associated volcanics reported from the presumed extension of the same Kidd-Munro assemblage in Alexo and Munro Townships. The initial 187Os/188Os ratio (0.1090 +/- 0.0019) obtained from the regression is essentially chondritic (γ Os(T) = -0.2 +/- 1.7). The peridotitic komatiites have the highest Os concentrations and low 187Re/188Os ratios (up to ˜4.2 ppb and < 0.5, respectively) among the whole rocks, whereas the komatiitic basalts have relatively low Os concentrations ( ˜0.3 ppb) and high 187Re/188Os ratios ( ˜3.1-11.9). For these komatiites, Os was compatible with the mantle residue (DOsmantle-melt ˜7.6), whereas Re was moderately incompatible (DRe ˜0.6), typical of most komatiitic magmas. The absence of a strong correlation between Os and Ni concentrations in the whole-rocks suggests that the distribution of Os in these rocks is not

Archaean greenstone belts of Sierra Leone with comments on the stratigraphy and metallogeny

NASA Astrophysics Data System (ADS)

Umeji, A. C.

Four belts of weakly metamorphosed volcano-sedimentary material, of about 2700 Ma, are enclosed by older granulites, gneisses and migmatites in the eastern part, and (i) a basal ultramafic unit followed by (ii) mafic to feldspathic differentiate and then (iii) a terminal sedimentary formation has been recognized in all the four belts and their average ratio is ultramafic: mafic (greenstone): sedimentary unit (2:5:3). The belts are linear and tightly folded along N-S to NE-SW axis which is also the regional grain of the structures in the older basement complex that engulfs them. Structural and geochronological evidences suggest that the deformation of these volcano-sedimentary supracrustals began during the Liberian tectonism ( c. 2700 Ma) and culminated at the beginning of the Eburnean (2200 Ma). Diapiric rise of K-rich younger Aechaean granites which sharphy trangressed all the earlier rocks and their structural trends, marked the last geotectonic event in the Archaean of this part of West Africa. Chromite cumulate and asbestiform deposits characterize the layered ultramafic unit. whilst gold and associated base metal sulphides which were derived from the volcanic units became hydrothermally concentrated close to the contact between the volcanic units and the overlying sediments, and also in the fault zones. Iron ore deposits are restricted to the sedimentary units where they occur as banded iron formation. It is only in the huge metasedimetary piles of the Sula-Kangari belt that deposits of iron ore occur in commercially viable quantities. The patterns of distribution, deformation and mineralization in these greenstone belts appear to fit closely into island arc model of plate tectonic theory.

Archean sedimentary systems and crustal evolution

NASA Technical Reports Server (NTRS)

Lowe, D. R.

1985-01-01

Current knowledge of preserved Archean sedimentary rocks suggests that they accumulated in at least three major depositional settings. These are represented generally by sedimentary units: (1) in early Archean, pre-3.0 Ga old greenstone belts, (2) on late Archean sialic cratons, and (3) in late Archean, post-3.0 Ga old greenstone belts. Research suggests that the Archean was characterized by at least two distinctive and largely diachronous styles of crustal evolution. Thick, stable early Archean simatic platforms, perhaps analogous to modern oceanic islands formed over hot spots, underwent a single cycle of cratonization to form stable continental blocks in the early Archean. Later formed Archean continents show a two stage evolution. The initial stage is reflected in the existence of older sialic material, perhaps representing incompletely cratonized areas or microcontinents of as yet unknown origin. During the second stage, late Archean greenstone belts, perhaps analogous to modern magmatic arcs or back arc basins, developed upon or adjacent to these older sialic blocks. The formation of this generation of Archean continents was largely complete by the end of the Archean. These results suggest that Archean greenstone belts may represent a considerable range of sedimentological and tectonic settings.

Komatiite genesis in the Archaean mantle, with implications for the tectonics of Archaean greenstone belts

NASA Technical Reports Server (NTRS)

Elthon, D.

1986-01-01

The presence of ultramafic lavas (komatiites) associated with Archean greenstone belts has been suggested to indicate very high increments (50-80%) of partial melting of the Archean mantle. Such extensive melting of the Earth's mantle during the Archean might have profound effects on the early tectonic and chemical evolution of the planet, although problems associated with keeping the komatiite liquid in equilibrium with the residual mantle at such high increments of melting has cast doubt upon aspects of extensive melting. Two important aspects of the origin of komatiites are discussed below.

Can tract element distributions reclaim tectonomagmatic facies of basalts in greenstone assemblages?

NASA Technical Reports Server (NTRS)

Butler, J. C.

1986-01-01

During the past two decades many words have been written both for and against the hypothesis that the tectonic setting of a suite of igneous rocks is retained by the chemical variability within the suite. For example, it is argued that diagrams can be constructed from modern/recent basalt subcompositions within the system Ti-Zr-Y-Nb-Sr such that tectonomagmatic settings can be reclaimed. If one accepts this conclusion, it is tempting to inquire as to how far this hypothesis can be extended into other petrological realms. If chemical variations of metabasalts retain information relating to their genesis (tectonic setting), for example, this would be most helpful in reconstructing the history of basalts from greenstone belts. A discussion follows.

Emplacement of pillow lavas from the ~ 2.8 Ga Chitradurga Greenstone Belt, South India: A physical volcanological, morphometric and geochemical perspective

NASA Astrophysics Data System (ADS)

Duraiswami, Raymond A.; Inamdar, Mustaqueem M.; Shaikh, Tahira N.

2013-08-01

The physical volcanology and morphometric analyses of pillowed lava flows from the Chitradurga basin of Chitradurga Greenstone Belt, South India have been undertaken. In the Chitradurga hills individual pillowed flows alternate with massive submarine sheet flows. The pillows from such flows are separated by chert and occur as spheroidal, elongated or reniform units that are devoid of vesicles, vesicle bands or pipe vesicles. The Mardihalli flow is exposed as a small elongated mound in the basin and consists of a massive core that is draped by pillows along the flow crest and flanks. The pillows from Mardihalli occur as spheroidal to elongate units with smooth, spalled or wrinkled surfaces with vesicular interiors. Repeated budding of larger pillows have produced a series of interconnected pillow units indicating fluid lava that was emplaced on steeply dipping flanks. Based on the morphological features the pillowed flows from the Chitradurga basin were emplaced at low effusion rates (≤ 5 m3/s). Pillows in these flows formed from low viscosity lavas that underwent negligible to moderate inflation due to rapid chilling. Sporadic occurrences of pillow breccias, hyaloclastite and chert breccias in the pillowed flow fields indicate disruption of pillows due to lava surges and slumping. It is envisaged that the Chitradurga basin witnessed distinct episodes of submarine tholeiite eruptions that produced pillowed lavas that variably interacted with sea water to produce geochemistries. The field and stratigraphic relationships of the volcanics and associated clastic sediments suggest that the pillow lavas were emplaced in a shallow marine marginal inter/back arc basin.

Lithostratigraphy and structure of the early Archaean Doolena Gap Greenstone Belt, East Pilbara Terrane (EPT), Western Australia

NASA Astrophysics Data System (ADS)

Wiemer, D.; Schrank, C. E.; Murphy, D. T.

2014-12-01

We present a detailed lithostratigraphic and structural analysis of the Archean Doolena Gap greenstone belt to shed light on the tectonic evolution of the EPT. The study area is divided into four structural domains: i) marginal orthogneisses of the MGC (Muccan Granitoid Complex), ii) a dominantly mafic mylonitic shear zone (South Muccan Shear Zone, SMSZ) enveloping the MGC, iii) a Central Fold Belt of dominantly mafic greenschists (CFB), and iv) a lower greenschist- to sub-greenschist southern domain. Toward the dome margin, abrupt increases in deformation intensity occur across domain boundaries. Domain boundaries and intra-domain shear zones are marked by significant carbonate +/- quartz alteration and high-strain non-coaxial deformation with dome-up kinematics. The southern domain comprises pillow basalts of the Mount Ada Formation (MAF), conformably overlain by clastic sediments and minor pillow basalts of the Duffer Formation (DF). The MAF and DF are overlain by an up to 1km thick package of quartzite (Strelley Pool Formation) across an angular unconformity. Isoclinal folds (F2) within the CFB to the North deform an early foliation (S1) within dominantly mafic schists and associated carbonate veins. F2 folds are preserved within lozenges that are parallel to the axial planes of F2 folds in a regional E-W trending foliation (S2) and to the SMSZ. Lozenges are often bound by zones of significant carbonate alteration. The lozenges are folded recumbently (F3), with sub-vertical fold axes pointing towards the dome. The F3 axes are parallel to mineral stretching lineations on S2 indicating dome-up movement. The entire belt is cut by late NE-SW-striking faults that exhibit dominantly brittle deformation in the southern domain but ductile drag folding (F4) in the CFB. Therefore, the southern domain must have overlain the CFB during this D4 event. We propose a protracted structural history of the greenstone belt where successive deformation events relate to the episodic

Development of a mixed seawater-hydrothermal fluid geochemical signature during alteration of volcanic rocks in the Archean (∼2.7 Ga) Abitibi Greenstone Belt, Canada

NASA Astrophysics Data System (ADS)

Brengman, Latisha A.; Fedo, Christopher M.

2018-04-01

We investigated a group of silicified volcanic rocks from the ∼2.72 Ga Hunter Mine Group (HMG), Abitibi Greenstone Belt, Canada, in order to document progressive compositional change associated with alteration in a subaqueous caldera system. Rocks of the HMG divide into three groups based on mineralogy and texture for petrographic and geochemical analyses. Volcanic features (phenocrysts, pseudomorphs after primary glass shards, lapilli, volcanic clasts) are preserved in all groups, despite changing mineralogy from primarily quartz, feldspar, chlorite (Groups 1 and 2), to quartz, hematite and carbonate (Groups 2 and 3). Compositionally, Group 1 rocks resemble volcanic rocks in the region, while Group 2 and 3 rocks show a change in mineralogy to iron, silica, and carbonate minerals, which is associated with depletion of many major and trace elements associated with volcanic rocks (Al2O3, Na2O, K2O, Zr). In addition, rare earth elements display a clear progression from volcanic signatures in Group 1 (PrSN/YbSN = 1.7-2.96, EuSN/EuSN∗ = 0.84-1.72, Y/Ho = 25.20-27.41, LaSN/LaSN∗ = 0.97-1.29, and Zr/Hf = 38.38-42.09) to transitional mixed volcanic, hydrothermal, and seawater signatures in Group 2 (PrSN/YbSN 1.33-2.89, EuSN/EuSN∗ 1.33-2.5, Y/Ho = 23.94-30, LaSN/LaSN∗ 0.93-1.34, and Zr/Hf = 40-70), to mixed hydrothermal and seawater signatures in Group 3 (PrSN/YbSN 0.62-2.88, EuSN/EuSN∗ 1.30-7.15, LaSN/LaSN∗ 1.02-1.86, Y/Ho = 25.56-55, and Zr/Hf = 35-50). We interpret that silicification of volcanic rocks (Group 1) produced transitional altered volcanic rocks (Group 2), and siliceous and jaspilitic rocks (Group 3), based on preservation of delicate volcanic features. Building on this explanation, we interpret that major, trace- and rare-earth element mobility occurred during the process of silicification, during which siliceous and jaspilitic rocks (Group 3) acquired aspects of the rare-earth element geochemical signatures of marine chemical precipitates. We

Effect of water on the composition of partial melts of greenstone and amphibolite

NASA Technical Reports Server (NTRS)

Beard, James S.; Lofgren, Gary E.

1989-01-01

Closed-system partial melts of hydrated, metamorphosed arc basalts and andesites (greenstones and amphibolites), where only water structurally bound in metamorphic minerals is available for melting (dehydration melting), are generally water-undersaturated, coexist with plagioclase-rich, anhydrous restites, and have compositions like island arc tonalites. In contrast, water-saturated melting at water pressures of 3 kilobars yields strongly peraluminous, low iron melts that coexist with an amphibole-bearing, plagioclase-poor restite. These melt compositions are unlike those of most natural silicic rocks. Thus, dehydration melting over a range of pressures in the crust of island arcs is a plausible mechanism for the petrogenesis of islands arc tonalite, whereas water-saturated melting at pressure of 3 kilobars and above is not.

Extensional tectonics during the igneous emplacement of the mafic-ultramafic rocks of the Barberton greenstone belt

NASA Technical Reports Server (NTRS)

Dewit, M. J.

1986-01-01

The simatic rocks (Onverwacht Group) of the Barberton greenstone belt are part of the Jamestown ophiolite complex. This ophiolite, together with its thick sedimentary cover occupies a complex thrust belt. Field studies have identified two types of early faults which are entirely confined to the simatic rocks and are deformed by the later thrusts and associated folds. The first type of fault (F1a) is regional and always occurs in the simatic rocks along and parallel to the lower contacts of the ophiolite-related cherts (Middle Marker and equivalent layers). These fault zones have previously been referred to both as flaser-banded gneisses and as weathering horizons. In general the zones range between 1-30m in thickness. Displacements along these zones are difficult to estimate, but may be in the order of 1-100 km. The structures indicate that the faults formed close to horizontal, during extensional shear and were therefore low angle normal faults. F1a zones overlap in age with the formation of the ophiolite complex. The second type of faults (F1b) are vertical brittle-ductile shear zones, which crosscut the complex at variable angles and cannot always be traced from plutonic to overlying extrusive (pillowed) simatic rocks. F1b zones are also apparently of penecontemporaneous origin with the intrusive-extrusive igneous processs. F1b zones may either represent transform fault-type activity or represent root zones (steepened extensions) of F1a zones. Both fault types indicate extensive deformation in the rocks of the greenstone belt prior to compressional overthrust tectonics.

The Archaen volcanic facies in the Migori segment, Nyanza greenstone belt, Kenya: stratigraphy, geochemistry and mineralisation

NASA Astrophysics Data System (ADS)

Ichang'l, D. W.; MacLean, W. H.

The Migori segment is an 80 by 20 km portion of the Nyanza greenstone belt which forms the northern part of the Archean Tanzanian Craton in western Kenya, northern Tanzania and southeastern Uganda. It consists of two volcanic centres, each with central, proximal and distal volcanic facies, comprising the Migori Group, the Macalder and Lolgorien Subgroups, and eleven volcano-sedimentary formations. The centres are separated by a basin of tuffs and greywacke turbidites. The volcanics are bimodal mafic basalt and dolerite ( Zr/Y = 3.8 - 6.5, La N/Yb N = 1.0 - 2.4) , and felsic calc-alkaline dacite-rhyolite ( Zr/Y = 10 - 21, La N/Yb N = 19 - 42 ) and high-K dacite ( Zr/Y = 9 - 16, La N/Yb N = 21 - 22 ). Felsic units form approximately three-fourths of the volcanic stratigraphy. Basalts, calc-alkaline dacites and rhyolites were deposited in a submarine environment, but the voluminous high-K dacites were erupted subaerially. The turbidites contain units of iron-formations. Granitic intrusions are chemically continuous with the high-K dacites. The felsic volcanics are anologous to those found at modern volcanic arc subduction settings involving continental crust. The Macalder ZnCuAuAg volcanogenic massive sulphide deposits is in central facies basalts-greywacke-rhyolite. Gold mineralisation occurs in proximal facies tuffs and iron formation, and in oblique and semi-conformable quartz veins. Greenstones in the Nyanza belt are dominated by calc-alkaline felsic volcanics in constrast to the komatiite-tholeiitic basalt volcanism in the Kaapvaal Craton of South Africa, and a mixture of the two types in the Zimbabwe Craton.

Characterization of transpressive deformation in shear zones of the Archean North Caribou greenstone belt (NW Superior Province) and the relationship with regional metamorphism

NASA Astrophysics Data System (ADS)

Gagnon, Émilie; Schneider, David A.; Kalbfleisch, Tash; Habler, Gerlinde; Biczok, John

2016-12-01

The 2.7-3.0 Ga North Caribou greenstone belt (NCGB), host to the Musselwhite BIF-hosted gold deposit, possesses abundant shear zones on its northern margins, which appear to have formed under amphibolite facies conditions. Protracted deformation and regional metamorphism are coeval with widespread magmatism and accretion events during crustal amalgamation of the Western Superior Province, and are responsible for folding the ore-hosting BIF and channeling fluids. The importance of shear zones in behaving as conduits for fluids during the tectonic evolution of the NCGB is not well known and their relationship with metamorphism is equivocal, yet higher-grade, syn- to post-tectonic metamorphic minerals seem to correlate with loci of higher strain. Structural analyses support oblique transpressive collision that produced steeply-dipping planar and shallowly-plunging linear fabrics with dominant dextral kinematics, that trend broadly parallel to the doubly arcuate shape of the belt. Electron backscatter diffraction analyses were conducted on strategic samples across one shear zone in order to characterize crustal conditions during transpressive deformation. The Dinnick Lake shear zone cuts through mafic metavolcanics and at its core is an L-tectonite granite composed of recrystallized quartz. Whole rock geochemistry shows little variation in Ca, Na, Mg and K (often used as indicators of hydrothermal alteration) from surrounding less deformed units, suggesting deformation in a dry environment. Microstructural analysis indicates subgrain rotation recrystallization and deformation by prism a- and c-slip in quartz, as well as aligned hornblende that suggest deformation temperatures above 500 °C. Quartz in mafic rocks along the margins of the shear zone also exhibits a basal a-slip component, indicating a slight decrease in strain or temperature. Although the NCGB exhibits some first-order evidence of vertical tectonism (dome and keel geometries), the dominant strain record

Polyphase thrust tectonic in the Barberton greenstone belt

NASA Technical Reports Server (NTRS)

Paris, I. A.

1986-01-01

In the circa 3.5 by-old Barberton greenstone belt, the supracrustal rocks form a thick and strongly deformed thrust complex. Structural studies in the southern part of the belt have shown that 2 separate phases of over-thrusting (D sub 1 and D sub 2) successively dismembered the original stratigraphy. Thrust nappes were subsequently refolded during later deformations (D sub 3 and D sub 4). This report deals with the second thrusting event which, in the study region appears to be dominant, and (unlike the earlier thrusting), affects the entire supracrustal pile. The supracrustal rocks form a predominantly NE/SW oriented, SE dipping tectonic fan (the D sub 2 fan) in which tectonic slices of ophiolitic-like rocks are interleaved with younger sedimentary sequences of the Diepgezet and malalotcha groups. Structural and sedimentological data indicate that the D sub 2 tectonic fan was formed during a prolonged, multi-stage regional horizontal shortening event during which several types of internal deformation mechanisms were successively and/or simultaneously active. Movement appears to have been predominantly to the NW and to the N. During D sub 2, periods of quiescence and sedimentation followed periods of thrust propagation. Although the exact kinematics which led to the formation of this fan is not yet known, paleoenvironmental interpretations together with structural data suggest that D sub 2 was probably related to (an) Archean collision(s).

Some Speculations Concerning The Abitibi Greenstone Belt As A Possible Analog To The Early Martian Crust

NASA Astrophysics Data System (ADS)

Russell, M.; Allwood, A.; Anderson, R. B.; Atkinson, B.; Beaty, D.; Bristow, T. F.; Ehlmann, B. L.; Grotzinger, J. P.; Hand, K. P.; Halevy, I.; Hurowitz, J. A.; Knoll, A.; McCleese, D. J.; Milliken, R.; Stolper, D. A.; Stolper, E. M.; Tosca, N. J.; Agouron Mars Simulation Field Team

2011-12-01

The Noachian crust of Mars comprises basaltic and, potentially, komatiitic lavas derived from a hot mantle slightly more reducing and sulfur-rich than that of the Earth. Ultramafic volcanic sequences of the ~2.7Ga Tisdale Group of the Abitibi Greenstone Belt, Ontario, provide a potential analog to these early martian lavas. The Abitibi rocks are a possible source of quartz veins carrying, in places, pyrite, carbonate and gold. These were hydrothermally introduced into volcanic and sedimentary rocks during greenschist metamorphism. Kilometer-scale talc-magnesite zones, resulting from the carbonation of serpentinized ultramafics, may have been the source and seawater, with some magmatic addition, was probably responsible for the pervasive alteration, although the chemical nature of hydrothermal fluids circulating in such piles depends upon the temperature of wall-rock interactions and is largely independent of fluid origin. Any sulfides and gold in unaltered ultramafic putative source rocks may have been lost to the invasive convective fluids. Given high heat flow and the presence of a hydrosphere, hydrothermal convection cells were probably the main mechanism of heat transfer through the crust on both planets. Exploration of the Abitibi belt provides a template for possible martian exploration strategies. Orbital remote sensing indicates that some ultramafic rocks on Mars have also been serpentinized and isolated areas of magnesite have been recently discovered, overlying altered mafic crust, with characteristic ridges at scales of a few hundred meters. While cogent arguments have been made favoring sedimentary exhalative accumulations of hydrothermal silica of the kind that are known to harbor bacteria on our own planet, no in situ siliceous sinters or even quartz veins have been identified with certainty on Mars. Here, we report on the mineralogic and visible to infrared spectral characteristics of mafic and ultramafic lithologies at Abitibi for comparison to

Depositional and tectonic setting of the Archean Moodies Group, Barberton Greenstone Belt, South Africa

NASA Technical Reports Server (NTRS)

Heubeck, C.; Lowe, D. R.

1994-01-01

The 3.22-3.10 Ga old Moodies Group, uppermost unit of the Swaziland Supergroup in the Barberton Greenstone Belt (BGB), is the oldest exposed, well-preserved quartz-rich sedimentary sequence on earth. It is preserved in structurally separate blocks in a heavily deformed fold-and-thrust belt. North of the Inyoka Fault, Moodies strata reach up to 3700 m in thickness. Detailed mapping, correlation of measured sections, and systematic analysis of paleocurrents show that the lower Moodies Group north of the Inyoka Fault forms a deepening- and fining-upward sequence from a basal alluvial conglomerate through braided fluvial, tidal, and deltaic sandstones to offshore sandy shelf deposits. The basal conglomerate and overlying fluvial facies were derived from the north and include abundant detritus eroded from underlying Fig Tree Group dacitic volcanic rocks. Shoreline-parallel transport and extensive reworking dominate overlying deltaic, tidal, and marine facies. The lithologies and arrangement of Moodies Group facies, sandstone petrology, the unconformable relationship between Moodies strata and older deformed rocks, presence of at least one syndepositional normal fault, and presence of basaltic flow rocks and airfall fall tuffs interbedded with the terrestrial strata collectively suggest that the lower Moodies Group was deposited in one or more intramontane basins in an extensional setting. Thinner Moodies sections south of the Inyoka Fault, generally less than 1000 m thick, may be correlative with the basal Moodies Group north of the Inyoka Fault and were probably deposited in separate basins. A northerly derived, southward-thinning fan-delta conglomerate in the upper part of the Moodies Group in the central BGB overlies lower strata with an angular unconformity. This and associated upper Moodies conglomerates mark the beginning of basin shortening by south- to southeast-directed thrust faulting along the northern margin of the BGB and suggest that the upper Moodies

Tectonic evolution of the Oudalan-Gorouol greenstone belt in NE Burkina Faso and Niger, West African craton.

NASA Astrophysics Data System (ADS)

Tshibubudze, Asinne; Hein, Kim A. A.

2010-05-01

-2130 Ma (Hein, 2009). D2 involved a period of SE-NW crustal shortening and sinistral-reverse displacement on the MSZ, and is correlated to the Eburnean Orogeny ~2.1 Ga of Feybesse et al. (2006). Deformation in D2 is characterised by NE-trending regional folds (F2) and a pervasive NE-trending foliation (S2-C to S2). Since 2007 an identical tectonic history has been established for a number of shear zones in the OGGB including the north-trending Kargouna Shear Zone, which is subtended by NW- and NE-trending shears. However the metamorphic grade and mineral assemblages vary from one shear zone to the next. Structural studies completed adjacent to the Dori batholith have indicated that the MSZ forms a shear complex that was active during pluton emplacement. However, the MSZ has two main branches that join at the location of a mylonite zone located north west of Essakane. Southwest of Essakane, a NW-trending mylonite zone crosscuts the Dori batholith and near the village of Kargouna, which is situated southeast of Essakane, the Kargouna shear crosscuts and deforms the Dori batholith. It is thus likely that the Dori batholith was emplacement prior to D1 in the OGGB. Gold mineralization in the OGGB is generally hosted in the hanging-wall of NE-trending faults and or NW-trending folds in metasiltstone-sandstone-shale sequences. Nkuna (2009) concluded that the deposits can be classified as orogenic gold deposits under the sub-class of "intrusion related" due to their proximity to plutonic masses, which concurs with geophysical studies for the OGGB. References: Feybesse, J.L., Billa, M., Guerrot, C., Duguey, E., Lescuyer, J.L., Milési, J.P., Bouchot, V., 2006. The Palaeoproterozoic Ghanaian province: Geodynamic model and ore controls, including regional stress modelling. Precambrian Research 149, 149-196. Hein, K.A.A., 2009 (In press). Structural chronologies in the Goren Greenstone belt (Burkina Faso); Implications for West African tectonics. Journal of African Earth Sciences

Geological constraints on detecting the earliest life on Earth: a perspective from the Early Archaean (older than 3.7 Gyr) of southwest Greenland

PubMed Central

Fedo, Christopher M; Whitehouse, Martin J; Kamber, Balz S

2006-01-01

At greater than 3.7 Gyr, Earth's oldest known supracrustal rocks, comprised dominantly of mafic igneous with less common sedimentary units including banded iron formation (BIF), are exposed in southwest Greenland. Regionally, they were intruded by younger tonalites, and then both were intensely dynamothermally metamorphosed to granulite facies (the highest pressures and temperatures generally encountered in the Earth's crust during metamorphism) in the Archaean and subsequently at lower grades until about 1500 Myr ago. Claims for the first preserved life on Earth have been based on the occurrence of greater than 3.8 Gyr isotopically light C occurring as graphite inclusions within apatite crystals from a 5 m thick purported BIF on the island of Akilia. Detailed geologic mapping and observations there indicate that the banding, first claimed to be depositional, is clearly deformational in origin. Furthermore, the mineralogy of the supposed BIF, being dominated by pyroxene, amphibole and quartz, is unlike well-known BIF from the Isua Greenstone Belt (IGB), but resembles enclosing mafic and ultramafic igneous rocks modified by metasomatism and repeated metamorphic recrystallization. This scenario parsimoniously links the geology, whole-rock geochemistry, 2.7 Gyr single crystal zircon ages in the unit, an approximately 1500 Myr age for apatites that lack any graphite, non-MIF sulphur isotopes in the unit and an inconclusive Fe isotope signature. Although both putative body fossils and carbon-12 enriched isotopes in graphite described at Isua are better explained by abiotic processes, more fruitful targets for examining the earliest stages in the emergence of life remain within greater than 3.7 Gyr IGB, which preserves BIF and other rocks that unambiguously formed at Earth's surface. PMID:16754603

Accretion of the Archean Slave Province

NASA Technical Reports Server (NTRS)

Kusky, Timothy

1988-01-01

Detailed field studies of selected areas in the greenstone belts of the Slave Province of Canada were presented. This area was long cited as a type area by supporters of the (now generally abandoned) rift model of greenstone belts. It was shown that a plate tectonic interpretation accounted more successfully for the regional geology and identified four terranes that had experienced complex divergent and convergent histories between 2.7 and 3.4 Ga. A dismembered ophiolite was identified and a late episode of widespread granitic intrusion was recognized.

High but balanced sedimentation and subsidence rates (Moodies Group, Barberton Greenstone Belt), followed by basin collapse: Implication for Archaean tectonics

NASA Astrophysics Data System (ADS)

Heubeck, Christoph; Lowe, Donald R.; Byerly, Gary R.

2010-05-01

Archaean tectonophysical models distinguish between thick, rigid and thin, mobile crust; from these the major mechanisms and rates for continental growth are derived. Archaean sedimentary rocks, preserved in metamorphosed and highly deformed greenstone belts, can contribute to constrain these models by estimating subsidence rates, derived from the combination of facies changes and precise age dates. Largely siliciclastic strata of the Moodies Group form the topmost unit of the Barberton Supergroup of the Barberton Greenstone Belt (BGB), South Africa, represent one of the world's oldest unmetamorphosed quartz-rich sedimentary sequences, and reach ca. 3500m thick (Lowe and Byerly, 2007). Large parts of the Moodies Group were deposited in apparent sedimentary continuity in alluvial, fluvial, shoreline and shallow-marine environments (e.g., Eriksson, 1979; Heubeck and Lowe, 1994). Distinctive sources and variations in facies indicate that Moodies deposition occurred at times in several basins. In several now tectonically separated regions, a regional basaltic lava (unit MdL of Anhaeusser, 1968) separates a lower unit (ca. 2000m thick and possibly representing an extensional setting) from an upper unit (ca. 1500m thick and characterized by progressive unconformities, rapidly changing facies, thicknesses, and sandstone petrographic composition). Single zircons separated from a felsic air-fall tuff of the middle Moodies Group and immediately overlying the basaltic lava in the Saddleback Syncline were dated on the Stanford-USGS SHRIMP RG. Out of 24 dated grains, two near-concordant groups have mean ages of 3230,6+-6,1Ma (2σ; n=9) and 3519+-7 Ma (2σ; n=9), respectively. We interpret the former age as representing the depositional age of the tuff, the latter as representing inherited zircons from underlying Onverwacht-age basement. The interpreted depositional age of the Moodies tuff is indistinguishable from numerous similar ages from felsic and dacitic volcanics at the

Metal accumulation in soils derived from volcano-sedimentary rocks, Rio Itapicuru Greenstone Belt, northeastern Brazil.

PubMed

Dos Santos, Laíse Milena Ribeiro; Gloaguen, Thomas Vincent; Fadigas, Francisco de Souza; Chaves, Joselisa Maria; Martins, Tamires Moraes Oliveira

2017-12-01

Many countries and some Brazilian regions have defined the guideline values for metals in soils. However, the local geological features may be so heterogeneous that global or even regional guideline values cannot be applied. The Greenstone Belts are worldwide geological formations of vast extension, containing mineralization of various metals (e.g., Au, Cr, Ni, and Ag). Natural concentrations of soils must be known to correctly assess the impact of mining. We studied the soils of the Rio Itapicuru Greenstone Belt (RIGB), of Paleoproterozoic age, sampling at 24 sites (0-0.20m) in the areas not or minimally human impacted, equally distributed in the three units of the RIGB: Volcanic Mafic Unit (VMU), Volcanic Felsic Unit (VFU), and Volcano-clastic Sedimentary Unit (SU). The natural pseudo-total concentrations of Cr, Ni, Cu, Zn, Pb, Fe, and Mn were obtained by acid digestion (EPA3050b) both in the soil and the particle-size fractions (sand and clay+silt). The concentrations of metals in RIGB soils, especially Cr and Ni, are generally higher than those reported for other regions of Brazil or other countries. Even the sedimentary soils have relatively high metal values, naturally contaminated by the VMU of the RIGB; a potential impact on Mesozoic and Cenozoic sedimentary rocks located near the study region is highly expected. Metals are concentrated (80%) in the fine particle-size fraction, implying an easy availability through surface transport (wind and runoff). We introduced a new index, called the Fe-independent accumulation factor - AF -Fe , which reveals that 90-98% of the dynamics of the trace metals is associated with the iron geochemical cycle. We primarily conclude that determining the guideline values for different soil classes in variable geological/geochemical environment and under semiarid climate is meaningless: the concentration of metals in soils is clearly more related to the source material than to the pedogenesis processes. Copyright © 2017 Elsevier

Earth's oldest mantle fabrics indicate Eoarchaean subduction

PubMed Central

Kaczmarek, Mary-Alix; Reddy, Steven M.; Nutman, Allen P.; Friend, Clark R. L.; Bennett, Vickie C.

2016-01-01

The extension of subduction processes into the Eoarchaean era (4.0–3.6 Ga) is controversial. The oldest reported terrestrial olivine, from two dunite lenses within the ∼3,720 Ma Isua supracrustal belt in Greenland, record a shape-preferred orientation of olivine crystals defining a weak foliation and a well-defined lattice-preferred orientation (LPO). [001] parallel to the maximum finite elongation direction and (010) perpendicular to the foliation plane define a B-type LPO. In the modern Earth such fabrics are associated with deformation of mantle rocks in the hanging wall of subduction systems; an interpretation supported by experiments. Here we show that the presence of B-type fabrics in the studied Isua dunites is consistent with a mantle origin and a supra-subduction mantle wedge setting, the latter supported by compositional data from nearby mafic rocks. Our results provide independent microstructural data consistent with the operation of Eoarchaean subduction and indicate that microstructural analyses of ancient ultramafic rocks provide a valuable record of Archaean geodynamics. PMID:26879892

Septate-tubular textures in 2.0-Ga pillow lavas from the Pechenga Greenstone Belt: a nano-spectroscopic approach to investigate their biogenicity.

PubMed

Fliegel, D; Wirth, R; Simonetti, A; Furnes, H; Staudigel, H; Hanski, E; Muehlenbachs, K

2010-12-01

Pillow lava rims and interpillow hyaloclastites from the upper part of the Pechenga Greenstone Belt, Kola Peninsula, N-Russia contain rare tubular textures 15-20 μm in diameter and up to several hundred μm long in prehnite-pumpellyite to lower greenschist facies meta-volcanic glass. The textures are septate with regular compartments 5-20 μm across and exhibit branching, stopping and no intersecting features. Synchrotron micro-energy dispersive X-ray was used to image elemental distributions; scanning transmission X-ray microscopy, Fe L-edge and C K-edge were used to identify iron and carbon speciation at interfaces between the tubular textures and the host rock. In situ U-Pb radiometric dating by LA-MC-ICP-MS (laser ablation multicollector inductively coupled plasma mass spectrometry) of titanite from pillow lavas yielded a metamorphic age of 1790 ± 89 Ma. Focused ion-beam milling combined with transmission electron microscopy was used to analyze the textures in three dimensions. Electron diffraction showed that the textures are mineralized by orientated pumpellyite. On the margins of the tubes, an interface between mica or chlorite and the pumpellyite shows evidence of dissolution reactions where the pumpellyite is replaced by mica/chlorite. A thin poorly crystalline Fe-phase, probably precipitated out of solution, occurs at the interface between pumpellyite and mica/chlorite. This sequence of phases leads to the hypothesis that the tubes were initially hollow, compartmentalized structures in volcanic glass that were mineralized by pumpellyite during low-grade metamorphism. Later, a Fe-bearing fluid mineralized the compartments between the pumpellyite and lastly the pumpellyite was partially dissolved and replaced by chlorite during greenschist metamorphism. The most plausible origin for a septate-tubular texture is a progressive etching of the host matrix by several generations of microbes and subsequently these tubes were filled by authigenic mineral

Tracing Life in the Earliest Terrestrial Rock Record

NASA Astrophysics Data System (ADS)

Lepland, A.; van Zuilen, M.; Arrhenius, G.

2001-12-01

The principal method for studying the earliest traces of life in the metamorphosed, oldest (> 3.5 Ga) terrestrial rocks involves determination of isotopic composition of carbon, mainly prevailing as graphite. It is generally believed that this measure can distinguish biogenic graphite from abiogenic varieties. However, the interpretation of life from carbon isotope ratios has to be assessed within the context of specific geologic circumstances requiring (i) reliable protolith interpretation (ii) control of secondary, metasomatic processes, and (iii) understanding of different graphite producing mechanisms and related carbon isotopic systematics. We have carried out a systematic study of abundance, isotopic composition and petrographic associations of graphite in rocks from the ca. 3.8 Ga Isua Supracrustal Belt (ISB) in southern West Greenland. Our study indicates that most of the graphite in ISB occurs in carbonate-rich metasomatic rocks (metacarbonates) while sedimentary units, including banded iron formations (BIFs) and metacherts, have exceedingly low graphite concentrations. Regardless of isotopic composition of graphite in metacarbonate rocks, their secondary origin disqualifies them from providing evidence for traces of life stemming from 3.8 Ga. Recognition of the secondary origin of Isua metacarbonates thus calls for reevaluation of biologic interpretations by Schidlowski et al. (1979) and Mojzsis et al. (1996) that suggested the occurrence of 3.8 Ga biogenic graphite in these rocks. The origin of minute quantities of reduced carbon, released from sedimentary BIFs and metacherts at combustion steps > 700 C remains to be clarified. Its isotopic composition (d13C from -18 to -25%) may hint at a biogenic origin. However, such isotopically light carbon was also found in Proterozoic mafic dykes cross-cutting the metasedimentary units in the ISB. The occurrence of isotopically light, reduced carbon in biologically irrelevant dykes may indicate secondary graphite

Evolution of the Archean Mohorovičić discontinuity from a synaccretionary 4.5 Ga protocrust

NASA Astrophysics Data System (ADS)

Hamilton, Warren B.

2013-12-01

This review evaluates and rejects the currently dominant dogmas of geodynamics and geochemistry, which are based on 1950s-1970s assumptions of a slowly differentiating Earth. Evidence is presented for evolution of mantle, crust, and early Moho that began with fractionation of most crustal components, synchronously with planetary accretion, into mafic protocrust by ~ 4.5 Ga. We know little about Hadean crustal geology (> 3.9 Ga) except that felsic rocks were then forming, but analogy with Venus, and dating from the Moon, indicate great shallow disruption by large and small impact structures, including huge fractionated impact-melt constructs, throughout that era. The mantle sample and Archean (< 3.9 Ga) crustal geology integrate well. The shallow mantle was extremely depleted by early removal of thick mafic protocrust, which was the primary source of the tonalite, trondhjemite, and granodiorite (TTG) that dominate preserved Archean crust to its base, and of the thick mafic volcanic rocks erupted on that crust. Lower TTG crust, kept mobile by its high radioactivity and by insulating upper crust, rose diapirically into the upper crust as dense volcanic rocks sagged synformally. The mobile lower crust simultaneously flowed laterally to maintain subhorizontal base and surface, and dragged overlying brittler granite-and-greenstone upper crust. Petrologically required garnet-rich residual protocrust incrementally delaminated, sank through low-density high-mantle magnesian dunite, and progressively re-enriched upper mantle, mostly metasomatically. Archean and earliest Proterozoic craton stabilization and development of final Mohos followed regionally complete early delamination of residual protocrust, variously between ~ 2.9 and 2.2 Ga. Where some protocrust remained, Proterozoic basins, filled thickly by sedimentary and volcanic rocks, developed on Archean crust, beneath which delamination of later residual protocrust continued top-down enrichment of upper mantle. That

Preliminary report on the geology and gold mineralization of the South Pass granite-greenstone terrain, Wind River Mountains, western Wyoming (US)

NASA Technical Reports Server (NTRS)

Hausel, W. D.

1986-01-01

The South Pass granite-greenstone terrain lies near the southern tip of the Wind River Mountains of western Wyoming. This Archean supracrustal pile has been Wyoming's most prolific source of gold and iron ore. From 1962 to 1983, more than 90 million tons of iron ore were recovered from oxide-facies banded iron formation, and an estimated 325,000 ounces of gold were mined from metagreywacke-hosted shears and associated placers. Precambrian rocks at South Pass are unconformably overlain by Paleozoic sediments along the northeast flank, and a Tertiary pediment buries Archean supracrustals on the west and south. To the northwest, the supracrustals terminate against granodiorite of the Louis Lake batholith; to the east, the supracrustals terminate against granite of the Granite Mountains batholith. The Louis Lake granodiorite is approximately 2,630 + or - 20 m.y. old, and the Granite Mountains granite averages 2,600 m.y. old. The geometry of the greenstone belt is best expressed as a synform that has been modified by complex faulting and folding. Metamorphism is amphibolite grade surrounding a small island of greenschist facies rocks. The younger of the Archean supracrustal successions is the Miners Delight Formation. This unit yielded a Rb-Sr isochron of 2,800 m.y. A sample of galena from the Snowbird Mine within the Miners Delight Formation yielded a model age averaging 2,750 m.y. The Snowbird mineralization appears to be syngenetic and is hosted by metavolcanics of calc-alkaline affinity. Discussion follows.

The Hadean upper mantle conundrum: evidence for source depletion and enrichment from Sm-Nd, Re-Os, and Pb isotopic compositions in 3.71 Gy boninite-like metabasalts from the Isua Supracrustal Belt, Greenland

NASA Astrophysics Data System (ADS)

Frei, Robert; Polat, Ali; Meibom, Anders

2004-04-01

Here we present Sm-Nd, Re-Os, and Pb isotopic data of carefully screened, least altered samples of boninite-like metabasalts from the Isua Supracrustal Belt (ISB, W Greenland)that characterize their mantle source at the time of their formation. The principal observations of this study are that by 3.7-3.8 Ga melt source regions existed in the upper mantle with complicated enrichment/depletion histories. Sm-Nd isotopic data define a correlation line with a slope corresponding to an age of 3.69 ± 0.18 Gy and an initial εNd value of +2.0 ± 4.7. This Sm-Nd age is consistent with indirect (but more precise) U-Pb geochronological estimates for their formation between 3.69-3.71 Ga. Relying on the maximum formation age of 3.71 Gy defined by the external age constraints, we calculate an average εNd [T = 3.71 Ga] value of +2.2 ± 0.9 (n = 18, 1σ) for these samples, which is indicative of a strongly depleted mantle source. This is consistent with the high Os concentrations, falling in the range between 1.9-3.4 ppb, which is similar to the estimated Os concentration for the primitive upper mantle. Re-Os isotopic data (excluding three outliers) yield an isochron defining an age of 3.76 ± 0.09 Gy (with an initial γOs value of 3.9 ± 1.2), within error consistent with the Sm-Nd age and the indirect U-Pb age estimates. An average initial γOs [T = 3.71 Ga] value of + 4.4 ± 1.2 (n = 8; 2σ) is indicative of enrichment of their source region during, or prior to, its melting. Thus, this study provides the first observation of an early Archean upper mantle domain with a distinctly radiogenic Os isotopic signature. This requires a mixing component characterized by time-integrated suprachondritic Re/Os evolution and a Os concentration high enough to strongly affect the Os budget of the mantle source; modern sediments, recycled basaltic crust, or the outer core do not constitute suitable candidates. At this point, the nature of the mantle or crustal component responsible for the

Tourmaline mineralization in the Barberton greenstone belt, South Africa: early Archean metasomatism by evaporite-derived boron.

PubMed

Byerly, G R; Palmer, M R

1991-05-01

Tourmaline-rich rocks are common in the low-grade, interior portions of the Barberton greenstone belt of South Africa, where shallow-marine sediments and underlying altered basaltic and komatiitic lavas contain up to 50% tourmaline. The presence of tourmaline-bearing rip-up clasts, intraformational tourmaline pebbles and tourmaline-coated grains indicate that boron mineralization was a low-temperature, surficial process. The association of these lithologies with stromatolites, evaporites, and shallow-water sedimentary structures and the virtual absence of tourmaline in correlative deep-water facies rocks in the greenstone belt strengthens this model. Five tourmaline-bearing lithologic groups (basalts, komatiites, evaporite-bearing sediments, stromatolitic sediments, and quartz veins) are distinguished based on field, petrographic, and geochemical criteria. Individual tourmaline crystals within these lithologies show internal chemical and textural variations that reflect continued growth through intervals of change in bulk-rock and fluid composition accompanying one or more metasomatic events. Large single-crystal variations exist in Fe/Mg, Al/Fe, and alkali-site vacancies. A wide range in tourmaline composition exists in rocks altered from similar protoliths, but tourmalines in sediments and lavas have similar compositional variations. Boron-isotope analyses of the tourmalines suggest that the boron enrichment in these rocks has a major marine evaporitic component. Sediments with gypsum pseudomorphs and lavas altered at low temperatures by shallow-level brines have the highest delta 11B values (+2.2 to -1.9%); lower delta 11B values of late quartz veins (-3.7 to -5.7%) reflect intermediate temperature, hydrothermal remobilization of evaporitic boron. The delta 11B values of tourmaline-rich stromatolitic sediments (-9.8 and -10.5%) are consistent with two-stage boron enrichment, in which earlier marine evaporitic boron was hydrothermally remobilized and vented in

Recycling and Mantle Stirring Determined by 142Nd/144Nd Isotopic Ratios

NASA Astrophysics Data System (ADS)

Jacobsen, S. B.; Ranen, M. C.

2004-12-01

It is now well established that 146Sm was live in the early solar system with an initial uniform 146Sm/144Sm ratio of ~0.008. Harper and Jacobsen (1992) discovered that a sample from Isua (~3.8 Ga old) had a positive 142Nd/144Nd anomaly of 33 ppm when compared to normal terrestrial and chondritic Nd. Furthermore, Jacobsen and Harper (1996) reported results from other Isua as well as Acasta (~4 Ga old) samples. Three other Isua samples had a possible small range (about -15 to +15), while two Acasta samples had no anomalies (normal to within 5 ppm). The presence of 142Nd anomalies at Isua has recently been confirmed by two other groups (Boyet et al. 2003; Caro et al. 2003). The available data demonstrate both the existence of early depleted mantle and that the early mantle was isotopically heterogeneous. As discussed by Jacobsen and Harper (1996), the recycling rate can be determined by tracing the decay of the average 142Nd/144Nd value of the depleted mantle. In addition, by using the 142Nd/144Nd heterogeneity in the depleted mantle through time we can determine the stirring rate of the mantle (Kellogg, Jacobsen and O'Connell, 2002) as a function of time. For this project our goal is to obtain a resolution in 142Nd/144Nd measurements of ~1 ppm. We have thus compared results obtained for the Nd isotope composition and 142Nd enriched standards for three different TIMS instruments: The Finnigan MAT 262 at Harvard, the Isoprobe-T and Finnigan TRITON mass spectrometers in GV Instrument's and Thermo Electron's demo laboratories in Manchester and Bremen, respectively. The Finnigan TRITON was designed in response to a request from the senior author for such an instrument. The results obtained so far demonstrate that all three instruments yield the same 142Nd/144Nd, 143Nd/144Nd and 145Nd/144Nd isotopic ratios to within a few ppm, while 148Nd/144Nd and 150Nd/144Nd ratios agree to within 10-20 ppm, when all ratios are normalized to 146Nd/144Nd using the exponential law. Due to

Sm-Nd isotopic data from Archean metavolcanic rocks at Holenarsipur, South India

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drury, S.A.; Van Calsteren, P.C.; Reeves-Smith, G.J.

1987-11-01

Results of a Sm-Nd isotopic analysis of Archean metavolcanics in the Holenarsipur greenstone belt, Karnataka, South India, give a whole-rock isochron age of 2.62 Ga for lightly deformed metabasaltic amphibolites in the northern part of the belt. This is within error of the age of high-grade metamorphism and crustal thickening which affected areas further to the south during the late Archean. Together with the geochemical affinities of these and other metavolcanics in Karnataka, and results of regional structural analysis, this unexpected age supports a model relating volcanism and crustal thickening to northward subduction and crustal accretion during the late Archean.more » Data from basic and ultrabasic metavolcanics from the more strongly deformed and higher-grade southern arm of the Holenarsipur belt do not permit an age greater than 3.0 Ga. Previously, these rocks were regarded as part of an older supracrustal sequence that predated the local 3.0 to 3.3 Ga gneissic complex. The new dates therefore considerably simplify attempts at accounting for greenstone evolution in South India.« less

Constraints on the differentiation of the Earth from the coupled Sm-146,147-Nd-142,143 systematics

NASA Technical Reports Server (NTRS)

Jacobsen, S. B.; Harper, C. L., Jr.

1993-01-01

The coupled Sm-Nd systematics are a powerful (albeit analytically challenging) tool for investigating the geodynamic history of the Earth. We have previously reported evidence for a 33 ppm difference of an Isua sample relative to our terrestrial standard. Interpretation yields a formation age range for the depleted mantle (DM) source reservoir of 4.45-4.55 Ga. This is consistent with an epoch of LREE-enriched melt extraction from the mantle (proto-crust formation), soon after magma ocean freeze-up following the putative Moon forming giant impact.

Diamonds in an Archean greenstone belt: Diamond suites in unconventional rocks of Wawa, Northern Ontario (Canada)

NASA Astrophysics Data System (ADS)

Kopylova, Maya; Bruce, Loryn; Ryder, John

2010-05-01

Diamonds typically are found on Archean cratons entrained by younger Phanerozoic kimberlites. In contrast, Wawa diamonds are hosted in "unconventional", non-kimberlitic rocks that formed contemporaneously with the mafic and sedimentary rocks of the Archean Michipicoten Greenstone Belt (MGB). We studied two diamond suites that occur within the 2.9-2.7 Ga greenschist facies rocks of MGB located in the southwest portion of the Superior Craton (E. Canada). The first diamond suite henceforth referred to as the Wawa breccia diamonds (384 stones), are hosted in the 2618-2744 Ma calc-alkaline lamprophyres and volcaniclastic breccias, contemporaneous with pillow basalts and felsic volcanics of MGB. The second suite, the Wawa conglomerate diamonds (80 crystals), are hosted in the 2697-2700 Ma poorly sorted sedimentary polymictic conglomerate which is interpreted as a proximal alluvial fan debris flow in a fan-delta environment. The majority of the diamonds was found within the matrix of the conglomerate. The diamondiferous breccia occurs 20 km north of the town of Wawa, whereas the conglomerate is found 12 km northeast of Wawa. Diamonds from the 2 occurrences were characterized and described for provenance studies. Both the breccia and conglomerate diamonds show similar crystal habits, with the predominance of octahedral single crystals and ~ 10% of cubes. The conglomerate diamonds are significantly less resorbed (no resorbtion in 43% of the stones) than the breccia diamonds (8% non-resorbed stones). In both suites, only 21-24% show high degrees of resorption. The majority of crystals in both suites are colourless, with some yellow, brown and grey stones. Conglomerate diamonds had a wider variety of colours that were not seen in the breccia diamonds, including green and pink. The breccia diamonds contain 0-740 ppm N and show two modes of N aggregation at 0-30 and 60-95%. Among the breccia diamonds, Type IaA stones comprise 17%, whereas IaAB stones make up 49% of the

Metallogenic and tectonic significance of oxygen isotope data and whole-rock potassium-argon ages of the Nikolai Greenstone, McCarthy Quadrangle, Alaska

USGS Publications Warehouse

Silberman, M.L.; MacKevett, E.M.; Connor, C.L.; Matthews, Alan

1980-01-01

The Middle and (or) Late Triassic Nikolai Greenstone, part of the allochthonous terrane of Wrangellia, is typically altered and locally metamorphosed to prehnite-pumpellyite facies with chlorite and epidote as the most common secondary minerals. Intrinsic copper content averages 155 ppm, and two types of concentrations of copper in the Nikolai are common: (1) native copper fillings of amygdules and rubble zones typically near flow tops, and (2) veins and thin replacement zones that contain native copper and copper-iron sulfides in quartz-epidote or calcite gangue in faults and fractures. Oxygen isotope data from quartz and epidote from three copperbearing veins yield calculated ore fluid temperatures of approximately 200°C and 6180 of approximately +1 per mil in agreement with a metamorphicsegregation origin of these deposits, as suggested by Sinclair (1977). Seven K-Ar ages of chloritized greenstone, including those adjacent to veins fall on an initial argon diagram with a zero intercept and a slope which yields an isochron age of 112 + 11 m.y. The ages define a Cretaceous thermalmetamorphic episode which is responsible for alteration and mineralization. The episode is younger than a major Jurassic progeny, accompanied by granitic intrusion, in the area, and appears to be unaffected by minor granitic intrusion in the middle to late Tertiary. We believe the Cretaceous event is related to accretion of Wrangellia to its present relative position in North America. This age of accretion agrees with stratigraphic and structural evidence cited by other workers. 

Audio-magnetotelluric investigation of sulfide mineralization in Proterozoic-Archean greenstone belts of Eastern Indian Craton

NASA Astrophysics Data System (ADS)

Singh, Shailendra; Maurya, Ved P.; Singh, Roshan K.; Srivastava, Shalivahan; Tripathi, Anurag; Adhikari, P. K.

2018-04-01

Greenstone belts are well known for gold occurrences at different regions of the world. The Dhanjori basin in the eastern Singhbhum region shows major characteristics of a rifted greenstone belt. Initially, we conducted 14 audio-magnetotelluric (AMT) measurements for a profile of ˜ 20 km in the frequency range of 1 kHz to 10 Hz over this rather complex geologic environment covering Dhanjori Volcanics (DhV) and Kolhan Group (KG). Subsequently, gravity and magnetic surveys were also conducted over this AMT profile. The purpose of the survey was to identify and map conductive features and to relate them to metallogeny of the area along with the mapping of the basement of Dhanjori basin. The strike analysis showed N30°W strike for DhV for all the frequencies and for sites over KG domain in the frequency range of 100-10 Hz, but for KG domain, the obtained strike in 1 kHz to 100 Hz is N45°E. As the combination of transverse electric (TE), transverse magnetic (TM) and tipper (Tzy) can recover the electrical signature in complex geological environment, we discuss the conductivity model obtained from TE+TM+Tzy only. The inversion was carried for the regional profile with 14 sites and for 7 sites over KG domain. Conductivity model shows two well resolved conductors, one each in KG and Quartz Pebble Conglomerate Dhanjori (QPCD) domains respectively showing common linked concordant features between these regional and KG profiles. The conductors are interpreted as sulfide mineralization linked with QPCD group of rocks which may host gold. These conductors are also horizontally disposed due to the intrusive younger Mayurbhanj Granite. These intrusives correlate well with the gravity modeling as well. The thickness of the Dhanjori basin at the central is about 3.0 km, similar to that from gravity modeling. The conductivity model also indicates the presence of shallow conductors, but could not be resolved due to lack of high frequency data. However, the results from the close

Occurrence of Tourmaline in Metasedimentary Rocks of the Isua Supracrustal Belt, Greenland: Implications for Ribose Stabilization in Hadean Marine Sediments.

PubMed

Mishima, Shinpei; Ohtomo, Yoko; Kakegawa, Takeshi

2016-06-01

Abiotic formation of RNA was important for the emergence of terrestrial life, but the acknowledged difficulties of generating and stabilizing ribose have often raised questions regarding how the first RNA might have formed. Previous researchers have proposed that borate could have stabilized ribose; however, the availability of borate on the early Earth has been the subject of intense debate. In order to examine whether borate was available on the early Earth, this study examined metasedimentary rocks from the Isua Supracrustal Belt. Garnet, biotite, and quartz comprise the major constituents of the examined rocks. Field relationships and the chemical compositions of the examined rocks suggest sedimentary origin. The present study found that garnet crystals contain a number of inclusions of tourmaline (a type of borosilicate mineral). All tourmaline crystals are Fe-rich and categorized as schorl. Both garnet and tourmaline often contain graphite inclusions and this close association of tourmaline with garnet and graphite has not been recognized previously. Garnet-biotite and graphite geothermometers suggest that the tourmaline in garnet experienced peak metamorphic conditions (~500 °C and 5 kbar). The mineralogical characteristics of the tourmaline and the whole rock composition indicate that the tourmaline formed authigenically in the sediment during diagenesis and/or early metamorphism. Clay minerals in modern sediments have the capability to adsorb and concentrate borate, which could lead to boron enrichment during diagenesis, followed by tourmaline formation under metamorphic conditions. Clay minerals, deposited on the early Archean seafloor, were the precursors of the garnet and biotite in the examined samples. The studied tourmaline crystals were most likely formed in the same way as modern tourmaline in marine sediments. Therefore, boron enrichment by clays must have been possible even during the early Archean. Thus, similar enrichment could have been

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

PubMed

Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-02-25

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

Implications of a 3.472-3.333 Gyr-old subaerial microbial mat from the Barberton greenstone belt, South Africa for the UV environmental conditions on the early Earth.

PubMed

Westall, Frances; de Ronde, Cornel E J; Southam, Gordon; Grassineau, Nathalie; Colas, Maggy; Cockell, Charles; Lammer, Helmut

2006-10-29

Modelling suggests that the UV radiation environment of the early Earth, with DNA weighted irradiances of about three orders of magnitude greater than those at present, was hostile to life forms at the surface, unless they lived in specific protected habitats. However, we present empirical evidence that challenges this commonly held view. We describe a well-developed microbial mat that formed on the surface of volcanic littoral sediments in an evaporitic environment in a 3.5-3.3Ga-old formation from the Barberton greenstone belt. Using a multiscale, multidisciplinary approach designed to strongly test the biogenicity of potential microbial structures, we show that the mat was constructed under flowing water by 0.25 microm filaments that produced copious quantities of extracellular polymeric substances, representing probably anoxygenic photosynthesizers. Associated with the mat is a small colony of rods-vibroids that probably represent sulphur-reducing bacteria. An embedded suite of evaporite minerals and desiccation cracks in the surface of the mat demonstrates that it was periodically exposed to the air in an evaporitic environment. We conclude that DNA-damaging UV radiation fluxes at the surface of the Earth at this period must either have been low (absorbed by CO2, H2O, a thin organic haze from photo-dissociated CH4, or SO2 from volcanic outgassing; scattered by volcanic, and periodically, meteorite dust, as well as by the upper layers of the microbial mat) and/or that the micro-organisms exhibited efficient gene repair/survival strategies.

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yi-Chen; Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Chiang, Te-Kuang

2015-10-15

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightlymore » smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.« less

Environmental arsenic contamination and its health effects in a historic gold mining area of the Mangalur greenstone belt of Northeastern Karnataka, India

PubMed Central

Chakraborti, Dipankar; Rahman, Mohammad Mahmudur; Murrill, Matthew; Das, Reshmi; Siddayya; Patil, S.G.; Sarkar, Atanu; Dadapeer, H.J.; Yendigeri, Saeed; Ahmed, Rishad; Das, Kusal K.

2014-01-01

This report summarizes recent findings of environmental arsenic (As) contamination and the consequent health effects in a community located near historic gold mining activities in the Mangalur greenstone belt of Karnataka, India. Arsenic contents in water, hair, nail, soil and food were measured by FI-HG-AAS. Elemental analyses of soils were determined by ICP-MS (inductively coupled plasma-mass spectrometry). Of 59 tube-well water samples, 79% had As above 10 μg L−1 (maximum 303 μg L−1). Of 12 topsoil samples, six were found to contain As greater than 2000 mg kg−1 possibly indicating the impact of mine tailings on the area. All hair and nail samples collected from 171 residents contained elevated As. Arsenical skin lesions were observed among 58.6% of a total 181 screened individuals. Histopathological analysis of puncture biopsies of suspected arsenical dermatological symptoms confirmed the diagnosis in 3 out of 4 patients. Based on the time-course of arsenic-like symptoms reported by the community as well as the presence of overt arsenicosis, it is hypothesized that the primary route of exposure in the study area was via contaminated groundwater; however, the identified high As content in residential soil could also be a significant source of As exposure via ingestion. Additional studies are required to determine the extent as well as the relative contribution of geologic and anthropogenic factors in environmental As contamination in the region. This study report is to our knowledge one of the first to describe overt arsenicosis in this region of Karnataka, India as well as more broadly an area with underlying greenstone geology and historic mining activity. PMID:23228450

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

PubMed

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

Formation of an Archean tectonic mélange in the Schreiber-Hemlo greenstone belt, Superior Province, Canada: Implications for Archean subduction-accretion process

NASA Astrophysics Data System (ADS)

Polat, Ali; Kerrich, Robert

1999-10-01

The late Archean (circa 2750-2670 Ma) Schreiber-Hemlo greenstone belt, Superior Province, Canada, is composed of tectonically juxtaposed fragments of oceanic plateaus (circa 2750-2700 Ma), oceanic island arcs (circa 2720-2695 Ma), and siliciclastic trench turbidites (circa 2705-2697 Ma). Following juxtaposition, these lithotectonic assemblages were collectively intruded by synkinematic tonalite-trondhjemite-granodiorite (TTG) plutons (circa 2720-2690 Ma) and ultramafic to felsic dikes and sills (circa 2690-2680 Ma), with subduction zone geochemical signatures. Overprinting relations between different sequences of structures suggest that the belt underwent at least three phases of deformation. During D1 (circa 2695-2685 Ma), oceanic plateau basalts and associated komatiites, arc-derived trench turbidites, and oceanic island arc sequences were all tectonically juxtaposed as they were incorporated into an accretionary complex. Fragmentation of these sequences resulted in broken formations and a tectonic mélange in the Schreiber assemblage of the belt. D2 (circa 2685-2680 Ma) is consistent with an intra-arc, right-lateral transpressional deformation. Fragmentation and mixing of D2 synkinematic dikes and sills suggest that mélange formation continued during D2. The D1 to D2 transition is interpreted in terms of a trenchward migration of the magmatic arc axis due to continued accretion and underplating. The D2 intra-arc strike-slip faults may have provided conduits for uprising melts from the descending slab, and they may have induced decompressional partial melting in the subarc mantle wedge, to yield synkinematic ultramafic to felsic intrusions. A similar close relationship between orogen-parallel strike-slip faulting and magmatism has recently been recognized in several Phanerozoic transpressional orogenic belts, suggesting that as in Phanerozoic counterparts, orogen-parallel strike-slip faulting in the Schreiber-Hemlo greenstone belt played an important role in

Feldspar palaeo-isochrons from early Archaean TTGs: Pb-isotope evidence for a high U/Pb terrestrial Hadean crust

NASA Astrophysics Data System (ADS)

Kamber, B. S.; Whitehouse, M. J.; Moorbath, S.; Collerson, K. D.

2001-12-01

Feldspar lead-isotope data for 22 early Archaean (3.80-3.82 Ga) tonalitic gneisses from an area south of the Isua greenstone belt (IGB),West Greenland, define a steep linear trend in common Pb-isotope space with an apparent age of 4480+/-77 Ma. Feldspars from interleaved amphibolites yield a similar array corresponding to a date of 4455+/-540 Ma. These regression lines are palaeo-isochrons that formed during feldspar-whole rock Pb-isotope homogenisation a long time (1.8 Ga) after rock formation but confirm the extreme antiquity (3.81 Ga) of the gneissic protoliths [1; this study]. Unlike their whole-rock counterparts, feldspar palaeo-isochrons are immune to rotational effects caused by the vagaries of U/Pb fractionation. Hence, comparison of their intercept with mantle Pb-isotope evolution models yields meaningful information regarding the source history of the magmatic precursors. The locus of intersection between the palaeo-isochrons and terrestrial mantle Pb-isotope evolution lines shows that the gneissic precursors of these 3.81 Ga gneisses were derived from a source with a substantially higher time-integrated U/Pb ratio than the mantle. Similar requirements for a high U/Pb source have been found for IGB BIF [2], IGB carbonate [3], and particularly IGB galenas [4]. Significantly, a single high U/Pb source that separated from the MORB-source mantle at ca. 4.3 Ga with a 238U/204Pb of ca. 10.5 provides a good fit to all these observations. In contrast to many previous models based on Nd and Hf-isotope evidence we propose that this reservoir was not a mantle source but the Hadean basaltic crust which, in the absence of an operating subduction process, encased the early Earth. Differentiation of the early high U/Pb basaltic crust could have occurred in response to gravitational sinking of cold mantle material or meteorite impact, and produced zircon-bearing magmatic rocks. The subchondritic Hf-isotope ratios of ca. 3.8 Ga zircons support this model [5] provided that

Implications of a 3.472–3.333 Gyr-old subaerial microbial mat from the Barberton greenstone belt, South Africa for the UV environmental conditions on the early Earth

PubMed Central

Westall, Frances; de Ronde, Cornel E.J; Southam, Gordon; Grassineau, Nathalie; Colas, Maggy; Cockell, Charles; Lammer, Helmut

2006-01-01

Modelling suggests that the UV radiation environment of the early Earth, with DNA weighted irradiances of about three orders of magnitude greater than those at present, was hostile to life forms at the surface, unless they lived in specific protected habitats. However, we present empirical evidence that challenges this commonly held view. We describe a well-developed microbial mat that formed on the surface of volcanic littoral sediments in an evaporitic environment in a 3.5–3.3 Ga-old formation from the Barberton greenstone belt. Using a multiscale, multidisciplinary approach designed to strongly test the biogenicity of potential microbial structures, we show that the mat was constructed under flowing water by 0.25 μm filaments that produced copious quantities of extracellular polymeric substances, representing probably anoxygenic photosynthesizers. Associated with the mat is a small colony of rods–vibroids that probably represent sulphur-reducing bacteria. An embedded suite of evaporite minerals and desiccation cracks in the surface of the mat demonstrates that it was periodically exposed to the air in an evaporitic environment. We conclude that DNA-damaging UV radiation fluxes at the surface of the Earth at this period must either have been low (absorbed by CO2, H2O, a thin organic haze from photo-dissociated CH4, or SO2 from volcanic outgassing; scattered by volcanic, and periodically, meteorite dust, as well as by the upper layers of the microbial mat) and/or that the micro-organisms exhibited efficient gene repair/survival strategies. PMID:17008224

1.88 Ga São Gabriel AMCG association in the southernmost Uatumã-Anauá Domain: Petrological implications for post-collisional A-type magmatism in the Amazonian Craton

NASA Astrophysics Data System (ADS)

Valério, Cristóvão da Silva; Macambira, Moacir José Buenano; Souza, Valmir da Silva; Dantas, Elton Luiz; Nardi, Lauro Valentim Stoll

2018-02-01

In the southernmost Uatumã-Anauá Domain, central Amazonian craton (Brazil), crop out 1.98 Ga basement inliers represented by (meta)leucosyenogranites and amphibolites (Igarapé Canoas Suite), 1.90-1.89 Ga high-K calc-alkaline granitoids (Água Branca Suite), a 1.88-1.87 Ga alkali-calcic A-type volcano-plutonic system (Iricoumé-Mapuera), Tonian SiO2-satured alkaline granitoids, 1.45-1.25 Ga orthoderived metamorphic rocks (Jauaperi Complex) and Orosirian-Upper Triassic mafic intrusions. New data on petrography, multielementar geochemistry, in situ zircon U-Pb ages and Nd and Hf isotopes of alkali-calcic A-type granites (São Gabriel Granite, Mapuera Suite) and related rocks are indicative of a 1.89-1.87 Ga volcano-plutonic system integrated to the São Gabriel AMCG association. Its magmatic evolution was controlled by the fractional crystallization combined with magma mixing and cumulation processes. Nd isotope values (εNdt values = - 3.71 to + 0.51 and Nd TDM model age = 2.44 to 2.12 Ga) and U-Pb inherited zircon crystals (2115 ± 22 Ma; 2206 ± 21 Ma; 2377 ± 17 Ma, 2385 ± 17 Ma) of the São Gabriel system indicate a large participation of Siderian-Rhyacian crust (granite-greenstones and granulites) and small contribution of Rhyacian mantelic magma. εHft values (+ 5.2 to - 5.8) and Hf TDM ages (3.27-2.14 Ga) also point to contribution of Paleoarchean-Rhyacian crustal melts and small participation of Siderian-Rhyacian mantle melts. Residual melts from the lower crust have been mixed with basaltic melts generated by partial melting of the subcontinental lithospheric mantle (peridotite) in a post-collisional setting at 1.89-1.87 Ga. The mafic melts of such a mixture could have been originated through partial melting of residual ocean plate fragments (eclogites) which ascended onto a residual mantle wedge (hornblende peridotite) and melted it, resulting in modified basaltic magma which, by underplating, led heat to the anatexis of the lower continental crust

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.

PubMed

Shen, J; Song, Y; Lee, M L; Cha, J J

2014-11-21

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems.

Transpression as the main deformational event in an Archaean greenstone belt, northeastern Minnesota

NASA Technical Reports Server (NTRS)

Hudleston, P. J.; Schultz-Ela, D.; Bauer, R. L.; Southwick, D. L.

1986-01-01

Deformed and metamorphosed sedimentary and volcanic rocks of the Vermilion district constitute an Archean greenstone belt trending east-west between higher grade rocks of the Vermilion Granitic Complex to the north and the Giants Range batholith to the south. Metamorphic grade is low throughout, being lowest in the center of the belt (chlorite zone of the greenschist facies). All the measured strain, a cleavage or schistosity, and a mineral lineation in this belt are attributed to the main phase of deformation D sub 2 that followed an earlier nappe-forming event D sub 1, which left little evidence of penetrative fabric. Previous work assumed that the D sub 2 deformation resulted from north-south compression across the district. It is now believed that a significant component of this deformation resulted from dextral shear across the whole region. Thus the Vermilion fault, a late-state largely strike-slip structure that bounds the Vermilion district to the north, may simply be the latest, most brittle expression of a shear regime that was much more widespread in space and time. Features that are indicative of shear include ductile shear zones with sigmoidal foliation patterns, highly schistose zones with the development of shear bands, feldspar clasts or pyrite cubes with asymmetric pressure shadows, and the fact that the asymmetry of the F sub 2 folds is predominantly Z for at least 15 km south of the Vermilion fault.

Compositional Grading in an Impact-produced Spherule Bed, Barberton Greenstone Belt, South Africa: A Key to Condensation History of Rock Vapor Clouds

NASA Technical Reports Server (NTRS)

Krull, A. E.; Lowe, D. R.; Byerly, G. R.

2003-01-01

The chemical and physical processes by which spherules form during the condensation of impact-produced rock vapor clouds are poorly understood. Although efforts have been made to model the processes of spherule formation, there is presently a paucity of field data to constrain the resulting theoretical models. The present study examines the vertical compositional variability in a single early Archean spherule bed in the Barberton Greenstone Belt (BGB), South Africa, in order to better identify the process by which impact vapor clouds condense and spherules form and accumulate. The BGB spherule beds are suitable for this type of study because of their great thickness, often exceeding 25cm of pure spherules, due to the massive sizes of the impactors. Two main problems complicate analysis of vertical compositional variability of graded spherule beds: (1) differential settling of particles in both the vapor and water column due to density and size differences and (2) turbulence within the vapor cloud. The present study compares sections of spherule bed S3 from four different depositional environments in the Barberton Greenstone Belt: (1) The Sheba Mine section (SAF-381) was deposited under fairly low energy conditions in deep water, providing a nice fallout sequence, and also has abundant Ni-rich spinels; (2) Jay's Chert section (SAF-380) was deposited in subaerial to shallow-water conditions with extensive post-depositional reworking by currents. The spherules also have preserved spinels; (3) the Loop Road section (loc. SAF-295; samp. KSA-7) was moderately reworked and has only rare preservation of spinels; and (4) the shallow-water Barite Syncline section (loc. SAF-206; samp KSA-1) has few to no spinels preserved and is not reworked. Although all of the spherule beds have been altered by silica diagenesis and K-metasomatism, most of the compositional differences between these sections appear to reflect their diagenetic histories, possibly related to their differing

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

A basin on an unstable ground: Correlation of the Middle Archaean Moodies Basin, Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Ohnemueller, Frank; Heubeck, Christoph; Kirstein, Jens; Gamper, Antonia

2010-05-01

The 3.22 Ga-old Moodies Group, representing the uppermost part of the Barberton Supergroup of the Barberton Greenstone Belt (BGB), is the oldest well-exposed, relatively unmetamorphosed, quartz-rich sedimentary unit on Earth. Moodies facies (north of the Inyoka Fault) were thought to be largely of alluvial, fluvial, deltaic or shallow-marine origin (Anhaeusser, 1976; Eriksson, 1980; Heubeck and Lowe, 1994) and in its upper part syndeformational. However, units can only locally be correlated, and the understanding of the interplay between Moodies sedimentation and deformation is thus limited. We mapped and measured Moodies units in the northern BGB. They partly consist of extensive turbiditic deepwater deposits, including graded bedding, flame structures, and slumped beds, interbedded with jaspilites. These contrast with shallow-water environments, south-facing progressive unconformities and overlying alluvial-fan conglomerates along the northern margin of the Saddleback Syncline further south. The palaeogeographic setting in which late BGB deformation was initiated therefore appears complex and cannot be readily explained by a simple southward-directed shortening event. In order to constrain Moodies basin setting before and during late-Moodies basin collapse, we correlated ~15 measured sections in the northern and central BGB. Most units below the Moodies Lava (MdL, ca. 3230.6+-6 Ma) can be correlated throughout although facies variations are apparent. Above the Moodies Lava, coarse-grained units can only be correlated through the Eureka Syncline and the Moodies Hills Block but not with the Saddleback Syncline. Fine-grained and jaspilitic units can be correlated throughout the northern BGB. Moodies below-wavebase deposition occurred largely north of the Saddleback Fault. The observations are consistent with a pronounced basin compartmentalization event following the eruption of the MdL which appeared to have blanketed most of the Moodies basin(s) in middle Moodies

Formation of the Archean crust of the ancient Vodlozero domain (Baltic shield)

NASA Astrophysics Data System (ADS)

Arestova, N. A.; Chekulaev, V. P.; Lobach-Zhuchenko, S. B.; Kucherovskii, G. A.

2015-03-01

The available geological, petrological, and isotopic data on Archean rocks of the Baltic shield are used to analyze the formation of the crust of the ancient Vodlozero domain. This made it possible to reveal the succession of endogenic processes in different parts of the domain and correlate them between each other. Several stages of magmatic processes reflecting changes in magma-generation environments are definable in the crust formation. The earliest stages of magmatism (3.24 and 3.13-3.15 Ga) are mostly represented by rocks of the tonalite-trondhjemite-granodiorite association. The next stage of endogenic activity (3020-2900 Ma) was marked by the formation of volcanics of the komatiite-basalt and andesite-dacite associations constituting greenstone belts in marginal parts of the Vodlozero domain and basic dikes accompanied by layered pyroxenite-norite-diorite intrusion in its central part. These basic bodies crossing earlier tonalities were formed in extension settings related to the formation of the mantle plume, which is confirmed by the rock composition. This stage culminated in the formation of trondhjemites at margins of greenstone structure. The next stage of endogenic activity commenced at 2890-2840 Ma by the emplacement of high-magnesian gabbro and diorite dikes in the western margin of the domain, where they cross rocks of the tonalitetrondhjemite association. This stage was marked by the formation of intermediate-acid subvolcanic bodies and dikes as well as basite intrusions including the layered and differentiated Semch intrusion, the largest one in the Vodlozero domain. The stage culminated at approximately 2850 Ma in the emplacement of tonalities of the limited distribution being represented by the Shilos massif in the north of the domain and Shal'skii massif on the eastern shore of Lake Onega. The important stage in the geological history of the Vodlozero domain is the formation of the intracratonic Matkalakhta greenstone belt at approximately 2

Reassessing the biogenicity of Earth's oldest trace fossil with implications for biosignatures in the search for early life.

PubMed

Grosch, Eugene G; McLoughlin, Nicola

2014-06-10

Microtextures in metavolcanic pillow lavas from the Barberton greenstone belt of South Africa have been argued to represent Earth's oldest trace fossil, preserving evidence for microbial life in the Paleoarchean subseafloor. In this study we present new in situ U-Pb age, metamorphic, and morphological data on these titanite microtextures from fresh drill cores intercepting the type locality. A filamentous microtexture representing a candidate biosignature yields a U-Pb titanite age of 2.819 ± 0.2 Ga. In the same drill core hornfelsic-textured titanite discovered adjacent to a local mafic sill records an indistinguishable U-Pb age of 2.913 ± 0.31 Ga, overlapping with the estimated age of intrusion. Quantitative microscale compositional mapping, combined with chlorite thermodynamic modeling, reveals that the titanite filaments are best developed in relatively low-temperature microdomains of the chlorite matrix. We find that the microtextures exhibit a morphological continuum that bears no similarity to candidate biotextures found in the modern oceanic crust. These new findings indicate that the titanite formed during late Archean ca. 2.9 Ga thermal contact metamorphism and not in an early ca. 3.45 Ga subseafloor environment. We therefore question the syngenicity and biogenicity of these purported trace fossils. It is argued herein that the titanite microtextures are more likely abiotic porphyroblasts of thermal contact metamorphic origin that record late-stage retrograde cooling in the pillow lava country rock. A full characterization of low-temperature metamorphic events and alternative biosignatures in greenstone belt pillow lavas is thus required before candidate traces of life can be confirmed in Archean subseafloor environments.

Photosynthesis in the Archean era.

PubMed

Olson, John M

2006-05-01

The earliest reductant for photosynthesis may have been H2. The carbon isotope composition measured in graphite from the 3.8-Ga Isua Supercrustal Belt in Greenland is attributed to H2-driven photosynthesis, rather than to oxygenic photosynthesis as there would have been no evolutionary pressure for oxygenic photosynthesis in the presence of H2. Anoxygenic photosynthesis may also be responsible for the filamentous mats found in the 3.4-Ga Buck Reef Chert in South Africa. Another early reductant was probably H2S. Eventually the supply of H2 in the atmosphere was likely to have been attenuated by the production of CH4 by methanogens, and the supply of H2S was likely to have been restricted to special environments near volcanos. Evaporites, possible stromatolites, and possible microfossils found in the 3.5-Ga Warrawoona Megasequence in Australia are attributed to sulfur-driven photosynthesis. Proteobacteria and protocyanobacteria are assumed to have evolved to use ferrous iron as reductant sometime around 3.0 Ga or earlier. This type of photosynthesis could have produced banded iron formations similar to those produced by oxygenic photosynthesis. Microfossils, stromatolites, and chemical biomarkers in Australia and South Africa show that cyanobacteria containing chlorophyll a and carrying out oxygenic photosynthesis appeared by 2.8 Ga, but the oxygen level in the atmosphere did not begin to increase until about 2.3 Ga.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

NASA Astrophysics Data System (ADS)

Philipps, Jan M.; Hölzel, Sara; Hille, Pascal; Schörmann, Jörg; Chatterjee, Sangam; Buyanova, Irina A.; Eickhoff, Martin; Hofmann, Detlev M.

2018-05-01

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In)GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed.

Evidence for structural stacking and repetition in the greenstones of the Kalgoorlie district, western Australia

NASA Technical Reports Server (NTRS)

Martyn, J. E.

1986-01-01

Most previous stratigraphic interpretations of the southern part of the Norseman-Wiluna Greenstone Belt have proposed polycyclic sequences. These invoked two and sometimes three successive suites of mafic and/or ultimafic volcanics and intrusives separated by felsic volcanics and immature clastic sediments, however no distinctive lithological differences were reported between successive mafic-ultramaic sequences. When interpretations of the area further to the north are integrated, a total of four separate major mafic-ultramafic uites emerges for a large part of the Norseman-Wiluna Belt. Although the author does not intent to imply that all polycyclic stratigraphies are wrong in principle such a situation seems suspiciously over-complex and stimulates the need to look critically at the individual areas where the stratigraphies have seen erected. For the Kalgoorlie area in the south, some of the schemes have already provoked scepticism and a simpler model consisting of one cycle subject to structural repetition has been evolved by workers in the Geological Survey of Western Australia for part of this area. The latter drew attention to the carbon copy similarity between the elements of some polycyclic stratigraphies. Much more regionally extensive integrated structural and stratigraphic data is still required to evaluate the relationship between structure and stratigraphy more fully, an objective substantially limited by poor outcrop and deep weathering, but with due effort, far from unattainable.

Evidence for structural stacking and repetition in the greenstones of the Kalgoorlie district, western Australia

NASA Astrophysics Data System (ADS)

Martyn, J. E.

Most previous stratigraphic interpretations of the southern part of the Norseman-Wiluna Greenstone Belt have proposed polycyclic sequences. These invoked two and sometimes three successive suites of mafic and/or ultimafic volcanics and intrusives separated by felsic volcanics and immature clastic sediments, however no distinctive lithological differences were reported between successive mafic-ultramaic sequences. When interpretations of the area further to the north are integrated, a total of four separate major mafic-ultramafic uites emerges for a large part of the Norseman-Wiluna Belt. Although the author does not intent to imply that all polycyclic stratigraphies are wrong in principle such a situation seems suspiciously over-complex and stimulates the need to look critically at the individual areas where the stratigraphies have seen erected. For the Kalgoorlie area in the south, some of the schemes have already provoked scepticism and a simpler model consisting of one cycle subject to structural repetition has been evolved by workers in the Geological Survey of Western Australia for part of this area. The latter drew attention to the carbon copy similarity between the elements of some polycyclic stratigraphies. Much more regionally extensive integrated structural and stratigraphic data is still required to evaluate the relationship between structure and stratigraphy more fully, an objective substantially limited by poor outcrop and deep weathering, but with due effort, far from unattainable.

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T.

2015-08-21

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations,more » the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.« less

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Skrobas, K.; Suski, T.; Christensen, N. E.; Svane, A.

2015-08-01

The electronic structures of short period mGaN/nGayAl1-yN and mInyGa1-yN/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Magmatism and Tectonics in the Meso-Archean Pongola Supergroup, South Africa

NASA Astrophysics Data System (ADS)

Wilson, Allan

2013-04-01

The Pongola Supergroup is one of the most extensive and well preserved volcano-sedimentary successions emplaced in a continental setting in the Meso-Archean (c. 2.95 Ga). It contrasts with both the older (Barberton type c.3.5 Ga) and younger (Belingwe type c.2.7 Ga) greenstone belts in southern Africa in that the sequence has not undergone the strong horizontal compressional tectonics typically related to greenstone belt-TTG environments. However, it is appropriate to compare this sequence with rocks of the Barberton greenstone belt by which the final phase of deposition preceded that of the juxtaposed Pongola basin with a relatively small time interval. The Pongola succession, which commenced with the first major magmatic event after the Barberton greenstone belt, overlies granitoids and remnants of greenstone belts in SE South Africa and in SW Swaziland. Formation was not in a continental rift environment but most likely in a marginal epicontinental basin with syn-depositional subsidence in a half-graben fault system in the type area. The Pongola rocks occur in two domains related to a NW-trending central basement high in the Kaapvaal Craton and achieving a maximum thickness of 8 km in the northern areas. The lower section (Nsuze group 3.7 km thick) is made up mainly of lavas and pyroclastic rocks and the upper section (Mozaan Group 4.3 km thick) is aranaceous sediments and argillites with a thick volcanic unit observed in the south-eastern facies. Chemical affinities of the lavas include tholeiite and calc-alkaline over the compositional range of basalt to rhyolite. There is a preponderance of andesites in the compositional array. The preservation of these rocks gives insight into the range of volcanic processes that took place at this stage of Earth history and in some areas it is possible to identify eruptions from a single source over several kilometres, as well as feeder-dyke systems to the lava flows. Simultaneous eruption of contrasting magmas from several

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

NASA Astrophysics Data System (ADS)

Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

1998-05-01

InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

Public Access to Digital Material; A Call to Researchers: Digital Libraries Need Collaboration across Disciplines; Greenstone: Open-Source Digital Library Software; Retrieval Issues for the Colorado Digitization Project's Heritage Database; Report on the 5th European Conference on Digital Libraries, ECDL 2001; Report on the First Joint Conference on Digital Libraries.

ERIC Educational Resources Information Center

Kahle, Brewster; Prelinger, Rick; Jackson, Mary E.; Boyack, Kevin W.; Wylie, Brian N.; Davidson, George S.; Witten, Ian H.; Bainbridge, David; Boddie, Stefan J.; Garrison, William A.; Cunningham, Sally Jo; Borgman, Christine L.; Hessel, Heather

2001-01-01

These six articles discuss various issues relating to digital libraries. Highlights include public access to digital materials; intellectual property concerns; the need for collaboration across disciplines; Greenstone software for construction and presentation of digital information collections; the Colorado Digitization Project; and conferences…

Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

NASA Astrophysics Data System (ADS)

Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Coexistence of enriched and modern-like 142Nd signatures in Archean igneous rocks of the eastern Kaapvaal Craton, southern Africa

NASA Astrophysics Data System (ADS)

Schneider, Kathrin P.; Hoffmann, J. Elis; Boyet, Maud; Münker, Carsten; Kröner, Alfred

2018-04-01

The short-lived 146Sm-142Nd isotope system is an important tool for tracing Hadean crust-mantle differentiation processes and constraining their imprint on much younger rocks from Archean cratons. We report the first comprehensive set of high-precision 142Nd analyses for granitoids and amphibolites of the Ancient Gneiss Complex (AGC; Swaziland) and the oldest metavolcanic units of the Barberton Greenstone Belt (BGB; South Africa). The investigated samples span an age range from 3.66 Ga to 3.22 Ga and are representative of major geological units of the AGC and the lower Onverwacht Group of the BGB. Measured samples yielded μ142Nd values in the range from -8 ppm to +3 ppm relative to the JNdi-1 terrestrial standard, with typical errors smaller than 4.4 ppm. The distribution of the μ142Nd values for these 17 measured samples is bimodal with ten samples showing a tendency towards slightly negative μ142Nd anomalies, whereas seven samples have 142Nd similar to the terrestrial reference. The only confidently resolvable μ142Nd anomalies were found in a 3.44 Ga Ngwane Gneiss sample and in amphibolites of the ca. 3.45 Ga Dwalile Greenstone Remnant, revealing μ142Nd values ranging from - 7.9 ± 4.4 to - 6.1 ± 4.3 ppm. The μ142Nd deficits do not correlate with age, lithological unit, or sample locality. Instead, our results reveal that two distinct mantle domains were involved in the formation of the AGC crust. The two reservoirs can be distinguished by their μ142Nd signatures. Mantle-derived rocks tapped the enriched reservoir with negative μ142Nd at least until 3.46 Ga, whereas the granitoids preserved a negative μ142Nd signature that formed by incorporation of older AGC crust at least until 3.22 Ga. The oldest gneisses with no μ142Nd anomaly are up to 3.64 Ga in age, indicating that a modern terrestrial 142Nd reservoir was already present by early Archean times.

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zech, E. S.; Chang, A. S.; Martin, A. J.

2013-08-19

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Kang, He; Li, Hui-Jie; Yang, Shao-Yan; Zhang, Wei; Zhu, Ming; Liu, Li; Li, Nan

2018-01-01

The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103-104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be caused by the rather different electric field distributions in Ga- and N-polar AlGaN/GaN heterostructures. In addition, we find that an AlN interlayer can effectively reduce the alloy scattering, mainly due to the large band offset between AlN and GaN. The calculated mobilities have been compared with the experiment results and good agreements are found. We believe that our results are important for the design of AlGaN/GaN heterostructure-based devices, especially the N-polar ones.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2017-02-01

GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

Reassessing the biogenicity of Earth’s oldest trace fossil with implications for biosignatures in the search for early life

PubMed Central

Grosch, Eugene G.; McLoughlin, Nicola

2014-01-01

Microtextures in metavolcanic pillow lavas from the Barberton greenstone belt of South Africa have been argued to represent Earth’s oldest trace fossil, preserving evidence for microbial life in the Paleoarchean subseafloor. In this study we present new in situ U–Pb age, metamorphic, and morphological data on these titanite microtextures from fresh drill cores intercepting the type locality. A filamentous microtexture representing a candidate biosignature yields a U–Pb titanite age of 2.819 ± 0.2 Ga. In the same drill core hornfelsic-textured titanite discovered adjacent to a local mafic sill records an indistinguishable U–Pb age of 2.913 ± 0.31 Ga, overlapping with the estimated age of intrusion. Quantitative microscale compositional mapping, combined with chlorite thermodynamic modeling, reveals that the titanite filaments are best developed in relatively low-temperature microdomains of the chlorite matrix. We find that the microtextures exhibit a morphological continuum that bears no similarity to candidate biotextures found in the modern oceanic crust. These new findings indicate that the titanite formed during late Archean ca. 2.9 Ga thermal contact metamorphism and not in an early ca. 3.45 Ga subseafloor environment. We therefore question the syngenicity and biogenicity of these purported trace fossils. It is argued herein that the titanite microtextures are more likely abiotic porphyroblasts of thermal contact metamorphic origin that record late-stage retrograde cooling in the pillow lava country rock. A full characterization of low-temperature metamorphic events and alternative biosignatures in greenstone belt pillow lavas is thus required before candidate traces of life can be confirmed in Archean subseafloor environments. PMID:24912193

Geochemical, oxygen, and neodymium isotope compositions of metasediments from the Abitibi greenstone belt and Pontiac Subprovince, Canada: Evidence for ancient crust and Archean terrane juxtaposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, R.; Kerrich, R.; Maas, R.

1993-02-01

The Abitibi greenstone belt (AGB) and Pontiac Subprovince (PS) in the southwestern Superior Province are adjacent greenstone-plutonic and metasedimentary-dominated terranes, respectively, separated by a major fault zone. Metasediments from these two contrasting terranes are compared in terms of major- and trace-element and O- and Nd-isotope compositions, and detrital zircon ages. The following two compositional populations of metasediments are present in the low-grade, Abitibi southern volcanic zone: (1) a mafic-element-enriched population (MEP) characterized by flat, depleted REE patterns; enhanced Mg, Cr, Co, Ni, and Sc; low-incompatible-element contents; and minor or absent normalized negative troughs at Nb, Ta, and Ti; and (2)more » a low-mafic-element population (LMEP) featuring LREE-enriched patterns; enhanced Rb, Cs, Ba, Th, and U contents; and pronounced normalized negative troughs at Nb, Ta, and Ti. These geochemical features are interpreted to indicate that the MEP sediments were derived from an ultramafic- and mafic-dominated oceanic provenance, whereas the LMEP sediments represent mixtures of mafic and felsic are source rocks. The PS metasediments are essentially indistinguishable from Abitibi LMEP on the basis of major-element and transition metal abundances, suggesting comparable types of source rocks and degrees of maturity, but are distinct in terms of some trace elements and O-isotope compositions. The Pontiac metasediments are depleted in [sup 18]O and enriched in Cs, Ba, Pb, Th, U, Nb, Ta, Hf, Zr, and total REE and also have higher ratios of Rb/K, Cs/Rb, Ba/Rb, Ta/Nb, Th/La, and Ba/La relative to the Abitibi LMEP. Two subtypes of REE patterns have been identified in PS metasediments. The first subtype is interpreted to be derived from provenances of mixed mafic and felsic volcanic rocks, whereas the Eu-depleted type has features that are typical of post-Archean sediments or Archean K-rich granites and volcanic equivalents. 100 refs., 9 figs., 4

Emplacement conditions of komatiite magmas from the 3.49 Ga Komati Formation, Barberton Greenstone Belt, South Africa1

NASA Astrophysics Data System (ADS)

Parman, S. W.; Dann, J. C.; Grove, T. L.; de Wit, M. J.

1997-08-01

This paper provides new constraints on the crystallization conditions of the 3.49 Ga Barberton komatiites. The compositional evidence from igneous pyroxene in the olivine spinifex komatiite units indicates that the magma contained significant quantities of dissolved H2O. Estimates are made from comparisons of the compositions of pyroxene preserved in Barberton komatiites with pyroxene produced in laboratory experiments at 0.1 MPa (1 bar) under anhydrous conditions and at 100 and 200 MPa (1 and 2 kbar) under H2O-saturated conditions on an analog Barberton composition. Pyroxene thermobarometry on high-Ca clinopyroxene compositions from ten samples requires a range of minimum magmatic water contents of 6 wt.% or greater at the time of pyroxene crystallization and minimum emplacement pressures of 190 MPa (6 km depth). Since high-Ca pyroxene appears after 30% crystallization of olivine and spinel, the liquidus H2O contents could be 4 to 6 wt.% H2O. The liquidus temperature of the Barberton komatiite composition studied is between 1370 and 1400°C at 200 MPa under H2O-saturated conditions. When compared to the temperature-depth regime of modern melt generation environments, the komatiite mantle source temperatures are 200°C higher than the hydrous mantle melting temperatures inferred in modern subduction zone environments and 100°C higher than mean mantle melting temperatures estimated at mid-ocean ridges. When compared to previous estimates of komatiite liquidus temperatures, melting under hydrous conditions occurs at temperatures that are ˜ 250°C lower than previous estimates for anhydrous komatiite. Mantle melting by near-fractional, adiabatic decompression takes place in a melting column that spans ˜ 38 km depth range under hydrous conditions. This depth interval for melting is only slightly greater than that observed in modern mid-ocean ridge environments. In contrast, anhydrous fractional melting models of komatiite occur over a larger depth range (˜ 130 km

Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers

NASA Astrophysics Data System (ADS)

Saini, Basant; Adhikari, Sonachand; Pal, Suchandan; Kapoor, Avinsahi

2017-07-01

The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm-3). The simulations are performed for four InxGa1-xN/GaN heterostructures (x = 10%, 15%, 20% and 25%), thus investigating the impact of PML for low as well as high indium containing absorber regions. Use of PML presents a suitable alternative to counter the effects of polarization-induced electric fields arising at low p-GaN doping density especially for absorber regions with high indium (>10%). It is seen that it not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barriers existing at i-InGaN/p-GaN heterojunction. The improvement in photovoltaic properties of the heterostructures even at low p-GaN doping validates this claim.

Thermal implications of metamorphism in greenstone belts and the hot asthenosphere-thick continental lithoshere paradox

NASA Technical Reports Server (NTRS)

Morgan, P.

1986-01-01

From considerations of secular cooling of the Earth and the slow decay of radiogenic heat sources in the Earth with time, the conclusion that global heat loss must have been higher in the Archean than at present seems inescapable. The mechanism by which this additional heat was lost and the implications of higher heat low for crustal temperatures are fundamental unknowns in our current understanding of Archean tectonics and geological processes. Higher heat loss implies that the average global geothermal gradient was higher in the Archean than at present, and the restriction of ultramafic komatiites to the Archean and other considerations suggests that the average temperature of the mantle was several hundred degrees hotter during the Archean than today. In contrast, there is little petrologic evidence that the conditions of metamorphism or crustal thickness (including maximum crustal thickness under mountains) were different in archean continental crust from the Phanerozoic record. Additionally, Archean ages have recently been determined for inclusions in diamonds from Cretaceous kimeberlites in South Africa, indicating temperatures of 900 to 1300 at depths of 150 to 215 km (45 to 65 kbar) in the Archean mantle, again implying relatively low geothermal gradients at least locally in the Archean. The thermal implications of metamorphism are examined, with special reference to greenstone belts, and a new thermal model of the continental lithosphere is suggested which is consistent with thick continental lithosphere and high asthenosphere temperatures in the Archean.

Oxidative elemental cycling under the low O2 Eoarchean atmosphere

PubMed Central

Frei, Robert; Crowe, Sean A.; Bau, Michael; Polat, Ali; Fowle, David A.; Døssing, Lasse N.

2016-01-01

The Great Oxidation Event signals the first large-scale oxygenation of the atmosphere roughly 2.4 Gyr ago. Geochemical signals diagnostic of oxidative weathering, however, extend as far back as 3.3–2.9 Gyr ago. 3.8–3.7 Gyr old rocks from Isua, Greenland stand as a deep time outpost, recording information on Earth’s earliest surface chemistry and the low oxygen primordial biosphere. Here we find fractionated Cr isotopes, relative to the igneous silicate Earth reservoir, in metamorphosed banded iron formations (BIFs) from Isua that indicate oxidative Cr cycling 3.8–3.7 Gyr ago. Elevated U/Th ratios in these BIFs relative to the contemporary crust, also signal oxidative mobilization of U. We suggest that reactive oxygen species were present in the Eoarchean surface environment, under a very low oxygen atmosphere, inducing oxidative elemental cycling during the deposition of the Isua BIFs and possibly supporting early aerobic biology. PMID:26864443

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Self-organization of palladium nanoislands on GaN and AlxGa1-xN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Stafiniak, Andrzej; Szymański, Tomasz; Paszkiewicz, Regina

2017-12-01

We report on systematic study on the dewetting process of thin Pd layer and self-organized Pd nano-islands on SiO2, GaN and AlxGa1-xN/GaN heterostructures with various Al content. The influence of factors such as the thickness of metal layer, type of top layer of AlGaN/GaN heterostructures, temperature and time of annealing process on the dimensions, shapes and density of Pd islands was analyzed. Comparing the behavior of self-organization of Pd islands on Al0.25Ga0.75N/GaN and SiO2 we can conclude that solid-state dewetting process on SiO2 occures much faster than on Al0.25Ga0.75N. For substrates with SiO2 this process requires less energy and can arise for thicker layer. On the Al0.25Ga0.75N surface the islands take more crystalline shape which is probably due to surface reconstruction of Pd-Ga alloy thin layer on interface. For thin metal layer the coalescence of islands into larger islands similar to Ostwald ripening mechanism was observed. Greater surface roughness of AlxGa1-xN/GaN heterostructures with higher Al content causes an increase of surface density of islands and the reduction of their sizes which improves the roundness. In case of GaN and AlxGa1-xN layers with Al content lower than 20%, the surface degradation caused by annealing process was observed. Probably, this is due to the decomposition of layers with gallium droplet formation on catalytic metal islands.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

PubMed Central

Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

2014-01-01

Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R.

2015-12-28

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaNmore » layers.« less

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.;

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon andmore » oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.« less

Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

NASA Astrophysics Data System (ADS)

Abdullah, Rafid A.; Ibrahim, Kamarulazizi

2010-07-01

ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

Predictions of ground states of LiGa and NaGa

NASA Astrophysics Data System (ADS)

Boldyrev, Alexander I.; Simons, Jack

1996-11-01

The ground and very low-lying excited states of LiGa and NaGa have been studied using high level ab initio techniques. At the QCISD(T)/6-311 + G(2df) level of theory, the 1Σ + state was found to be the most stable for both molecules. The equilibrium bond lengths and dissociation energies were found to be: R( LiGa) = 2.865 Å and D0(LiGa) = 22.3 kcal/mol and R( NaGa) = 3.174 Å and D0(NaGa) = 17.1 kcal/mol. Trends within the ground electronic states of LiB, NaB, LiAl, NaAl, LiGa and NaGa are discussed and predictions for related AlkM (Alk LiCs and MBTl) species are made.

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

NASA Astrophysics Data System (ADS)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

No Nd-142 Excess in the Early Archean Isua Gneiss IE 715-28

NASA Technical Reports Server (NTRS)

Papanastassiou, D. A.; Sharma, M.; Ngo, H. H.; Wasserburg, G. J.; Dymek, R. F.

2003-01-01

There is abundant evidence for the existence of 146Sm in the early solar system and for preservation of effects in the 146Sm-142Nd system in differentiated meteorites ([1]; see recent discussion in Stewart et al. 1994). Information from the 182Hf-182W system, as revised by new careful work [2-3] also indicates that the Earth s core formed relatively early. It is in principle possible for early-formed crust and mantle reservoirs on Earth to have preserved evidence for 146Sm if such reservoirs were produced with high Sm/Nd fractionation and if they have remained isolated and closed since 4.3 Ga. The mean life of 146Sm of 149 Ma is sufficiently long to make this an intriguing possibility.

Carrier quenching in InGaP/GaAs double heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.

2015-08-14

Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes tomore » reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.« less

An Archaean Tonalite-Trondhjemite-Granodiorite Association of the Kursk Block (Voronezh Massif): Composition, Age, and Correlation with the Ukrainian Shield

NASA Astrophysics Data System (ADS)

Savko, K. A.; Samsonov, A. V.; Larionov, A. N.; Korish, E. Kh.; Bazikov, N. S.

2018-01-01

Framing of the Archaean greenstone belts of the Kursk Block (KB) of the East Sarmatia preserves rocks of the TTG association: those do not form massifs with distinct boundaries, but occur as fields gradually transiting into gneisses and migmatites. According to Sm-Nd isotope-geochemical data, the TTG are characterized by positive values of ɛNd(2960) = +0.3…+1.6 and protolith model ages of T Nd( DM) = 3100-3200 Ma. Magmatic protoliths of the Kursk Block TTG were formed about 2960 Ma by melting from a juvenile basite source. These age estimates are significantly younger than heterochronous (3.19, 3.13 and 3.07 Ga) TTGs of the Middle Dnieper granite-greenstone terrane. On the other hand, the similarity of ɛNd(T) implies a single source of their protoliths. Consequently, the KB TTGs, apparently, are a result of transformation of an older sial crust preserved within the Middle Dnieper Block.

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Vesicular komatiites, 3.5-Ga Komati Formation, Barberton Greenstone Belt, South Africa: inflation of submarine lavas and origin of spinifex zones

NASA Astrophysics Data System (ADS)

Dann, Jesse

2001-08-01

Komatiites of the 3.5-Ga Komati Formation are ultramafic lavas (>23% MgO) erupted in a submarine, lava plain environment. Newly discovered vesicular komatiites have vesicular upper crusts disrupted by synvolcanic structures that are similar to inflation-related structures of modern lava flows. Detailed outcrop maps reveal flows with upper vesicular zones, 2-15 m thick, which were (1) rotated by differential inflation, (2) intruded by dikes from the interior of the flow, (3) extended, forming a flooded graben, and/or (4) entirely engulfed. The largest inflated structure is a tumulus with 20 m of surface relief, which was covered by a compound flow unit of spinifex flow lobes. The lava that inflated and rotated the upper vesicular crust did not vesiculate, but crystallized as a thick spinifex zone with fist-size skeletal olivine. Instead of representing rapidly cooled lava, the spinifex zone cooled slowly beneath an insulating upper crust during inflation. Overpressure of the inflating lava may have inhibited vesiculation. This work describes the oldest vesicular komatiites known, illustrates the first field evidence for inflated structures in komatiite flows, proposes a new factor in the development of spinifex zones, and concludes that the inflation model is useful for understanding the evolution of komatiite submarine flow fields.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

PubMed

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Nuese, C. J.; Olsen, G. H.

1978-01-01

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

Magnetometory Measurement of AlGaN/GaN 2DEG

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2004-03-01

AlGaN/GaN heterostructure devices have been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the magnetometory measurement of AlGaN/GaN 2DEG at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540 cm^2/Vs and 6.6 × 10^12 cm-2, respectively. When the temperature is lower than 4.5 K the hysteresis of magnetometric data is observed near zero magnetic field. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears and the slope of magnetometric data with respect to magnetic field becomes lower as obeying Currie-Weiss law. In general the hysteresis and Currie-Weiss law behavior in magnetometric data imply the possibility of the ferromagnetism, but the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Lin'an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A andmore » 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.« less

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

PubMed

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

Ca. 2.7 Ga ferropicritic magmatism: A record of Fe-rich heterogeneities during Neoarchean global mantle melting

NASA Astrophysics Data System (ADS)

Milidragovic, Dejan; Francis, Don

2016-07-01

Although terrestrial picritic magmas with FeOTOT ⩾13 wt.% are rare in the geological record, they were relatively common ca. 2.7 Ga during the Neoarchean episode of enhanced global growth of continental crust. Recent evidence that ferropicritic underplating played an important role in the ca. 2.74-2.70 Ga reworking of the Ungava craton provides the impetus for a comparison of ca. 2.7 Ga ferropicrite occurrences in the global Neoarchean magmatic record. In addition to the Fe-rich plutons of the Ungava craton, volumetrically minor ferropicritic flows, pyroclastic deposits, and intrusive rocks form parts of the Neoarchean greenstone belt stratigraphy of the Abitibi, Wawa, Wabigoon and Vermillion domains of the southern and western Superior Province. Neoarchean ferropicritic rocks also occur on five other Archean cratons: West Churchill, Slave, Yilgarn, Kaapvaal, and Karelia; suggesting that ca. 2.7 Ga Fe-rich magmatism was globally widespread. Neoarchean ferropicrites form two distinct groups in terms of their trace element geochemistry. Alkaline ferropicrites have fractionated REE profiles and show no systematic HFSE anomalies, broadly resembling the trace element character of modern-day ocean island basalt (OIB) magmas. Magmas parental to ca. 2.7 Ga alkaline ferropicrites also had high Nb/YPM (>2), low Al2O3/TiO2 (<8) and Sc/Fe (⩽3 × 10-4) ratios, and were enriched in Ni relative to primary pyrolite mantle-derived melts. The high Ni contents of the alkaline ferropicrites coupled with the low Sc/Fe ratios are consistent with derivation from olivine-free garnet-pyroxenite sources. The second ferropicrite group is characterized by decisively non-alkaline primary trace element profiles that range from flat to LREE-depleted, resembling Archean tholeiitic basalts and komatiites. In contrast to the alkaline ferropicrites, the magmas parental to the subalkaline ferropicrites had flat HREE, lower Nb/YPM (<2), higher Al2O3/TiO2 (8-25) and Sc/Fe (⩾4 × 10-4) ratios, and

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2013 CFR

2013-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2011 CFR

2011-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2014 CFR

2014-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2012 CFR

2012-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2010 CFR

2010-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru

2014-10-27

Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to entermore » the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)« less

Ga flux dependence of Er-doped GaN luminescent thin films

NASA Astrophysics Data System (ADS)

Lee, D. S.; Steckl, A. J.

2002-02-01

Er-doped GaN thin films have been grown on (111) Si substrates with various Ga fluxes in a radio frequency plasma molecular beam epitaxy system. Visible photoluminescence (PL) and electroluminescence (EL) emission at 537/558 nm and infrared (IR) PL emission at 1.5 μm from GaN:Er films exhibited strong dependence on the Ga flux. Both visible and IR PL and visible EL increase with the Ga flux up to the stoichiometric growth condition, as determined by growth rate saturation. Beyond this condition, all luminescence levels abruptly dropped to the detection limit with increasing Ga flux. The Er concentration, measured by secondary ion mass spectroscopy and Rutherford backscattering, decreases with increasing Ga flux under N-rich growth conditions and remains constant above the stoichiometric growth condition. X-ray diffraction indicated that the crystalline quality of the GaN:Er film was improved with increasing Ga flux up to stoichiometric growth condition and then saturated. Er ions in the films grown under N-rich conditions appear much more optically active than those in the films grown under Ga-rich conditions.

U enrichment and Th/U fractionation in Archean boninites: Implications for paleo-ocean oxygenation and U cycling at juvenile subduction zones

NASA Astrophysics Data System (ADS)

Manikyamba, C.; Said, Nuru; Santosh, M.; Saha, Abhishek; Ganguly, Sohini; Subramanyam, K. S. V.

2018-05-01

Phanerozoic boninites record enrichments of U over Th, giving Th/U: 0.5-1.6, relative to intraoceanic island arc tholeiites (IAT) where Th/U averages 2.6. Uranium enrichment is attributed to incorporation of shallow, oxidized fluids, U-rich but Th-poor, from the slab into the melt column of boninites which form in near-trench to forearc settings of suprasubduction zone ophiolites. Well preserved Archean komatiite-tholeiite, plume-derived, oceanic volcanic sequences have primary magmatic Th/U ratios of 4.4-3.6, and Archean convergent margin IAT volcanic sequences, having REE and HFSE compositions similar to Phanerozoic IAT equivalents, preserve primary Th/U of 4-3.6. The best preserved Archean boninites of the 3.0 Ga Olondo and 2.7 Ga Gadwal greenstone belts, hosted in convergent margin ophiolite sequences, also show relative enrichments of U over Th, with low average Th/U ∼3 relative to coeval IAT, and Phanerozoic counterparts which are devoid of crustal contamination and therefore erupted in an intraoceanic setting, with minimal contemporaneous submarine hydrothermal alteration. Later enrichment of U is unlikely as Th-U-Nb-LREE patterns are coherent in these boninites whereas secondary effects induce dispersion of Th/U ratios. The variation in Th/U ratios from Archean to Phanerozoic boninites of greenstone belts to ophiolitic sequences reflect on genesis of boninitic lavas at different tectono-thermal regimes. Consequently, if the explanation for U enrichment in Phanerozoic boninites also applies to Archean examples, the implication is that U was soluble in oxygenated Archean marine water up to 600 Ma before the proposed great oxygenation event (GOE) at ∼2.4 Ga. This interpretation is consistent with large Ce anomalies in some hydrothermally altered Archean volcanic sequences aged 3.0-2.7 Ga.

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

PubMed

Jegenyes, Nikoletta; Morassi, Martina; Chrétien, Pascal; Travers, Laurent; Lu, Lu; Julien, Francois H; Tchernycheva, Maria; Houzé, Frédéric; Gogneau, Noelle

2018-05-25

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm². These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

Study of GaN nanorods converted from β-Ga2O3

NASA Astrophysics Data System (ADS)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

PubMed

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Sc(2)MgGa(2) and Y(2)MgGa(2).

PubMed

Sahlberg, Martin; Andersson, Yvonne

2009-03-01

Scandium magnesium gallide, Sc(2)MgGa(2), and yttrium magnesium gallide, Y(2)MgGa(2), were synthesized from the corresponding elements by heating under an argon atmosphere in an induction furnace. These intermetallic compounds crystallize in the tetragonal Mo(2)FeB(2)-type structure. All three crystallographically unique atoms occupy special positions and the site symmetries of (Sc/Y, Ga) and Mg are m2m and 4/m, respectively. The coordinations around Sc/Y, Mg and Ga are pentagonal (Sc/Y), tetragonal (Mg) and triangular (Ga) prisms, with four (Mg) or three (Ga) additional capping atoms leading to the coordination numbers [10], [8+4] and [6+3], respectively. The crystal structure of Sc(2)MgGa(2 )was determined from single-crystal diffraction intensities and the isostructural Y(2)MgGa(2) was identified from powder diffraction data.

Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates

NASA Technical Reports Server (NTRS)

Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoc, H.

1987-01-01

The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

PubMed

Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

2013-05-15

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

Magnetoresistance Study in a GaAs/InGaAs/GaAs Delta-Doped Quantum Well

NASA Astrophysics Data System (ADS)

Hasbun, J. E.

1997-03-01

The magnetoresistance of a GaAs/Ga_0.87In_0.13As/GaAs with an electron concentration of N_s=6.3x10^11cm-2 is calculated at low temperature for a magnetic field range of 2-30 tesla and low electric field. The results obtained for the magnetotransport are compared with the experimental work of Herfort et al.(J. Herfort, K.-J. Friedland, H. Kostial, and R. Hey, Appl. Phys. Lett. V66, 23 (1995)). While the logitudinal magnetoresistance agrees reasonably well with experiment, the Hall resistance slope reflects a classical shape; however, its second derivative seems to show oscillations that are consistent with the Hall effect plateaus seen experimentally. Albeit with a much higher electron concentration, earlier calculationsfootnote J. Hasbun, APS Bull. V41, 419 (1996) for an Al_0.27Ga_0.73/GaAs /Al_0.27Ga_0.73As quantum well shows similar behavior. This work has been carried out with the use of a quantum many body approach employed in earlier work(J. Hasbun, APS Bull. V41, 1659 (1996)).

Mineral remains of early life on Earth? On Mars?

USGS Publications Warehouse

Iberall, Robbins E.; Iberall, A.S.

1991-01-01

The oldest sedimentary rocks on Earth, the 3.8-Ga Isua Iron-Formation in southwestern Greenland, are metamorphosed past the point where organic-walled fossils would remain. Acid residues and thin sections of these rocks reveal ferric microstructures that have filamentous, hollow rod, and spherical shapes not characteristic of crystalline minerals. Instead, they resemble ferric-coated remains of bacteria. Because there are no earlier sedimentary rocks to study on Earth, it may be necessary to expand the search elsewhere in the solar system for clues to any biotic precursors or other types of early life. A study of morphologies of iron oxide minerals collected in the southern highlands during a Mars sample return mission may therefore help to fill in important gaps in the history of Earth's earliest biosphere. -from Authors

LA-SF-ICP-MS zircon U-Pb geochronology of granitic rocks from the central Bundelkhand greenstone complex, Bundelkhand craton, India

NASA Astrophysics Data System (ADS)

Verma, Sanjeet K.; Verma, Surendra P.; Oliveira, Elson P.; Singh, Vinod K.; Moreno, Juan A.

2016-03-01

The central Bundelkhand greenstone complex in Bundelkhand craton, northern India is one of the well exposed Archaean supracrustal amphibolite, banded iron formation (BIF) and felsic volcanic rocks (FV) and associated with grey and pink porphyritic granite, tonalite-trondhjemite-granodiorite (TTG). Here we present high precision zircon U-Pb geochronological data for the pinkish porphyritic granites and TTG. The zircons from the grey-pinkish porphyritic granite show three different concordia ages of 2531 ± 21 Ma, 2516 ± 38 Ma, and 2514 ± 13 Ma, which are interpreted as the best estimate of the magmatic crystallization age for the studied granites. We also report the concordia age of 2669 ± 7.4 Ma for a trondhjemite gneiss sample, which is so far the youngest U-Pb geochronological data for a TTG rock suite in the Bundelkhand craton. This TTG formation at 2669 Ma is also more similar to Precambrian basement TTG gneisses of the Aravalli Craton of north western India and suggests that crust formation in the Bundelkhand Craton occurred in a similar time-frame to that recorded from the Aravalli craton of the North-western India.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

GaSbBi/GaSb quantum-well and wire laser diodes

NASA Astrophysics Data System (ADS)

Ridene, Said

2018-06-01

In this work, we present detailed theoretical studies of the optical gain spectra and the emission wavelength of GaSb1-xBix/GaSb and traditional GaAs1-xBix/GaAs dilute-bismide quantum wells and wires (QWs, QWRs) focusing on comparison between their performances. It is found that the optical gain and the emission wavelength of the GaSb-based QW and QWRs lasers would be considerably greater than that of the GaAs-based QW lasers and QWRs for the same QW-, QWR-width, Bi-content and carrier density. The theoretical results were found to be in good agreement with available experimental data, especially for the emission wavelength given by GaSb-based QW laser diodes.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation

NASA Astrophysics Data System (ADS)

Arkusha, Yu. V.; Prokhorov, E. D.; Storozhenko, I. P.

2004-09-01

The frequency dependence of the generation efficiency of an mm- -nn:In:InxGaGa1-1-xAs- As-nn:GaAs-:GaAs-nn++:GaAs TED with the 2.5-mm long active region is calculated. The optimum values - which yield the diode maximum generation efficiency - for the :GaAs TED with the 2.5-mm long active region is calculated. The optimum values - which yield the diode maximum generation efficiency - for the nn:In:InxGaGa1-1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined.As cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined.

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

PubMed

Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E; Draxl, C; Trampert, A

2016-02-12

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%

NASA Astrophysics Data System (ADS)

Nattermann, L.; Beyer, A.; Ludewig, P.; Hepp, T.; Sterzer, E.; Volz, K.

2017-04-01

Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers for telecommunications as well as sensing applications. In the last several years a growing body of literature has emerged, particularly on the growth of Ga(AsBi). However, the metal organic vapor phase epitaxy growth of Ga(AsBi) with high amounts of Bi, which are necessary to overcome Auger recombination and reach telecommunications wavelengths, still remains a challenge. Ga(PBi) could be a promising alternative, but has not been deposited with significant amounts of Bi so far. A second argument for Ga(PBi) is that it could be grown on GaP, which was already deposited on Si. A number of researchers have reported theoretical calculations on the band structure of Ga(PBi), but experimental results are still lacking. In this work we present the first Ga(PBi) structures, grown by metal organic vapor phase epitaxy on GaP and on GaP on Si. By careful characterization with high resolution X-ray diffraction, atomic force microscopy, secondary ion mass spectrometry and scanning transmission electron microscopy, we will show that we have realized high quality Ga(PBi) with Bi fractions over 8%.

A hole modulator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

NASA Astrophysics Data System (ADS)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Geochemical characteristics of aluminum depleted and undepleted komatiites and HREE-enriched low-Ti tholeiites, western Abitibi greenstone belt: A heterogeneous mantle plume-convergent margin environment

NASA Astrophysics Data System (ADS)

Fan, J.; Kerrich, R.

1997-11-01

A compositionally diverse suite of komatiites, komatiitic basalts, and basalts coexist in the Tisdale volcanic assemblage of the late-Archean (˜2.7 Ga) Abitibi greenstone belt. The komatiites are characterized by a spectrum of REE patterns, from low total REE contents (9 ppm) and pronounced convex-up patterns to greater total REE (18 ppm) and approximately flat-distributions. Thorium and niobium are codepleted with LREE. Komatiites with the most convex-up patterns have low Al 2O 3 (4.7 wt%) contents and Al 2O 3/TiO 2(12) ratios; they are interpreted to be the Al-depleted variety of komatiite derived from a depleted mantle source. Those komatiites and komatiitic basalts with flatter REE patterns are characterized by greater Al 2O 3 (7.0 wt%) and near chondritic Al 2O 3/TiO 2 (20) ratios; they are interpreted to be Al-undepleted komatiites generated from trace element undepleted mantle. For the komatiites and komatiitic basalts collectively, Gd/Ybn ratios are negatively correlated with La/Smn, but positively with MgO and Ni. The spectrum of patterns is interpreted as mixing between Al, HREE, Y-depleted, and Sc-depleted komatiites and Al-undepleted komatiites in a heterogeneous mantle plume. Auminum-depleted komatiites are characterized by negative Zr and Hf anomalies, consistent with majorite garnet-liquid D's for HFSE and REEs, signifying melt segregation at depths of >400 km. Tisdale Al-undepleted komatiites and komatiitic basalts have small negative to zero Zr(Hf)/MREE fractionation, signifying melt segregation in or above the garnet stability field. Collectively, the komatiites have correlations of Zr/Zr∗ and Hf/Hf ∗ with Gd/Ybn, and hence the Zr(Hf)/MREE fractionations are unlikely to have stemmed from alteration or crustal contamination. Two types of basalts are present. Type I basalts are Mg-tholeiites with near flat REE and primitive mantle normalized patterns, compositionally similar to abundant Mg-tholeiites associated with both Al-undepleted and Al

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M.

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reducedmore » channel thermal conductivity must be considered.« less

A hole modulator for InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei

2015-02-09

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall holemore » concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.« less

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa

We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extractingmore » binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.« less

Current-induced switching in CoGa/L10 MnGa/(CoGa)/Pt structure with different thicknesses

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Mizukami, S.

2018-06-01

In this paper, we present the results of our study into current-induced spin-orbit torque (SOT) switching in perpendicularly magnetized CoGa/MnGa/Pt trilayers with different thicknesses of MnGa and Pt. The SOT switching was observed for all films that undergo Joule heating. We also investigate SOT switching in the bottom (CoGa)/MnGa/top(CoGa/Pt) films with different top layers. Although both the bottom and top layers contribute to the SOT, the relative magnitudes of the switching current densities JC in the top and bottom layers indicate that the SOT is dominant in the top layer. The JC as a function of thickness is discussed in terms of the magnetic properties and resistivity. Experimental data suggested that the MnGa thickness dependence of JC may originate from the perpendicular magnetic anisotropy thickness product Kueff t value. On the other hand, JC as a function of the Pt thickness shows weak dependence. This may be attributed to the slight change of spin-Hall angle θSH value with different thicknesses of Pt, when we assumed that the SOT switching is primarily due to the spin-Hall effect.

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer

NASA Astrophysics Data System (ADS)

Yan, P. F.; Du, K.; Sui, M. L.

2012-10-01

Due to the special dislocation slip systems in hexagonal lattice, dislocation dominated deformations in hexagonal structured multilayers are significantly different from that in cubic structured systems. In this work, we have studied the strain relaxation mechanism in hexagonal structured InGaN/AlGaN/GaN multilayers with transmission electron microscopy. Due to lattice mismatch, the strain relaxation was found initiated with the formation of pyramidal dislocations. Such dislocations locally lie at only one preferential slip direction in the hexagonal lattice. This preferential slip causes a shear stress along the basal planes and consequently leads to dissociation of pyramidal dislocations and operation of the basal plane slip system. The compressive InGaN layers and "weak" AlGaN/InGaN interfaces stimulate the dissociation of pyramidal dislocations at the interfaces. These results enhance the understanding of interactions between dislocations and layer interfaces and shed new lights on deformation mechanism in hexagonal-lattice multilayers.

Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation.

PubMed

Bietti, Sergio; Basso Basset, Francesco; Scarpellini, David; Fedorov, Alexey; Ballabio, Andrea; Esposito, Luca; Elborg, Martin; Kuroda, Takashi; Nemcsics, Akos; Toth, Lajos; Manzoni, Cristian; Vozzi, Caterina; Sanguinetti, Stefano

2018-06-18

A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule fabrication and the metal nanoparticle alignment is discussed. The tuning of the relative positioning of quantum dot molecules and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical quantum dot molecule was evaluated on the base of the morphological characterizations performed by Atomic Force Microscopy and cross sectional Scanning Electron Microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition. . © 2018 IOP Publishing Ltd.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Erdong; Li, Qiming; Swartzentruber, Brian

2015-11-25

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

PubMed

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

Laser induced OMCVD growth of AlGaAs on GaAs

NASA Technical Reports Server (NTRS)

Wilt, David M.; Warner, Joseph D.; Aron, Paul R.; Pouch, John J.; Hoffman, Richard W., Jr.

1987-01-01

A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

On the dissolution properties of GaAs in Ga

NASA Technical Reports Server (NTRS)

Davidson, M. C.; Moynahan, A. H.

1977-01-01

The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

A petrological study of Paleoarchean rocks of the Onverwacht Group: New insights into the geologic evolution of the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Grosch, E. G.; Mcloughlin, N.; Abu-Alam, T. S.; Vidal, O.

2012-12-01

This study presents a multi-disciplinary petrological approach applied to surface samples and a total of 800 m of scientific drill core that furthers our understanding of the geologic evolution of the ca. 3.5 to 3.2 Ga Onverwacht Group of the Barberton greenstone belt (BGB), South Africa. Detrital zircon grains in coarse (diamictite) to fine-grained clastic sedimentary rocks of the Noisy formation (drill core KD2a) that unconformably overlies the volcanic ca. 3472 Ma Hooggenoeg Formation, are investigated by laser ablation LA-ICP-MS to constrain their 207Pb/206Pb ages for depositional age and provenance. A wide range in 207Pb/206Pb ages between ca. 3600 and 3430 Ma is reported, corresponding to surrounding TTG plutons and the ca.3667-3223 Ma Ancient Gneiss Complex. The youngest detrital zircon grain identified has an age of 3432 ± 10 Ma. Given the short time interval for a major change in geologic environment between ca. 3472 Ma and ca. 3432 Ma, it is argued here, that the Noisy formation is the earliest tectonic basin in the BGB, which developed during major tectonic uplift at ca. 3432 Ma. In the overlying ca. 3334 Ma Kromberg type-section, application of a chlorite thermodynamic multi-equilibrium calculation, dioctahedral mica hydration-temperature curve and pseudosection modelling, indicates a wide range in metamorphic conditions from sub-greenschist to the uppermost greenschist facies across the Kromberg type-section. A central mylonitic fuchsite-bearing zone, referred to as the Kromberg Section Mylonites, records at least two metamorphic events: a high-T, low-P (420 ± 30oC, < 3kbar) metamorphism, and a lower-T event (T = 240-350oC, P = 2.9 ± 0.15kbar) related to retrograde metamorphism. An inverted metamorphic field gradient is documented beneath the KSM suggesting thrust repetition of the Kromberg sequence over the clastic rocks of the Noisy formation at ca. 3.2 Ga. This study also presents the first SIMS multiple sulfur isotope dataset on sulfides from

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

NASA Astrophysics Data System (ADS)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Syn-extensional emplacement of the 1. 42 Ga Sandia Granite, N. M

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karlstrom, K.E.; Kirby, E.; Andronicos, C.

1993-02-01

The 1.42 Ga Sandia pluton is one of a suite of Middle Proterozoic granitoid intrusions exposed in northern New Mexico. It crops out over 420 km[sup 2] in the Sandia Mountains, just east of Albuquerque. Recent structural work indicates that the pluton was emplaced syntectonically with respect to a transtensional ductile shear zone on its southeastern side. The shear zone is 1-2 km wide, dips 60[degree] NW under the pluton, and is thus inferred to be a deformed base or lower side of the pluton. From NW to SE, a transect across the zone consists of (1) essentially undeformed, locallymore » flow-foliated Sandia pluton (megacrystic monzogranite); (2) mylonitic, augen orthogneiss that is clearly sheared Sandia pluton; its matrix is depleted in quartz and K-feldspar and enriched in biotite relative to the undeformed pluton; (3) Cibola granite - a 1 km wide zone of fine to coarse grained, equigranular, leucocratic granite; (4) the Tijeras Fault - a Phanerozoic brittle fault; (5) the Tijeras Greenstone - unsheared amphibolite and interlayered pelitic schist and quartzite. Field and microstructural relationships indicate that pluton crystallization was synchronous with shear zone movements. Shear zone movement is interpreted to have punctuated segregation of evolved melts during fractional crystallization of the magma. Geochemical data show linear trends in major and trace elements, with compositional gaps between the main pluton and leucocratic phases. Strain studies suggest that the biotite-rich mylonitic augen orthogneiss records significant volume loss in the matrix. Melts presumably were drawn down pressure gradients into the active shear zone after the main unit was 50--70% crystallized. Further work is required to constrain whether extension was related to regional deformation or only to pluton emplacement.« less

Characterisation of Ga-coated and Ga-brazed aluminium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferchaud, E.; Christien, F., E-mail: frederic.christien@univ-nantes.fr; Barnier, V.

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples showsmore » that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.« less

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

PubMed

Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; von Molnár, Stephan; Xiong, Peng

2013-04-10

Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

PubMed Central

Sadofyev, Yuri G.; Samal, Nigamananda

2010-01-01

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

Self-organized formation of GaSb/GaAs quantum rings.

PubMed

Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

2008-12-19

Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

NASA Astrophysics Data System (ADS)

Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2018-05-01

Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

NASA Astrophysics Data System (ADS)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Hai-Ming; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Liang, Baolai, E-mail: bliang@cnsi.ucla.edu

2015-03-09

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

NASA Technical Reports Server (NTRS)

Meier, D. L.; Szedon, J. R.; Bartko, J.; Chung, M. A.

1989-01-01

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

1982-01-01

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

Dependence of Ag/Ga composition ratio in AgGaSe2 thin film

NASA Astrophysics Data System (ADS)

Matsuo, H.; Yoshino, K.; Ikari, T.

2006-09-01

AgGaSe2 thin film was deposited on glass substrates by vacuum evaporation method. The starting material was mixed Ag2Se and Ga2Se3 powders. Ag/Ga ratios of the samples were 1.5, 1.2, 1.0, 0.8, 0.7 and 0.4. The samples were annealed from 100 to 600 °C for 10 min. After these processes, single phase AgGaSe2 thin films could be obtained except Ag/Ga ratio of 0.4 at annealing temperature of 600 °C. Ag-rich samples had large grain. On the other hand, Ga-rich samples had small grain. Furthermore, Ga-rich and Ag-rich samples indicated p- and n-types because of Ag- and/or Ga-vacancy and Se-vacancy, respectively.

Comparison of as-grown and annealed GaN/InGaN : Mg samples

NASA Astrophysics Data System (ADS)

Deng, Qingwen; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Lin, Defeng; Jiang, Lijuan; Feng, Chun; Li, Jinmin; Wang, Zhanguo; Hou, Xun

2011-08-01

Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7 K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N2 ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.

Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Shengbiao; Wen, Huanming; Wu, Ruihong; Wang, Xiaojun; Wang, Xiaoliang

2009-11-01

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Atomic-scale structure and electronic properties of GaN/GaAs superlattices

NASA Astrophysics Data System (ADS)

Goldman, R. S.; Feenstra, R. M.; Briner, B. G.; O'Steen, M. L.; Hauenstein, R. J.

1996-12-01

We have investigated the atomic-scale structure and electronic properties of GaN/GaAs superlattices produced by nitridation of a molecular beam epitaxially grown GaAs surface. Using cross-sectional scanning tunneling microscopy (STM) and spectroscopy, we show that the nitrided layers are laterally inhomogeneous, consisting of groups of atomic-scale defects and larger clusters. Analysis of x-ray diffraction data in terms of fractional area of clusters (determined by STM), reveals a cluster lattice constant similar to bulk GaN. In addition, tunneling spectroscopy on the defects indicates a conduction band state associated with an acceptor level of NAs in GaAs. Therefore, we identify the clusters and defects as nearly pure GaN and NAs, respectively. Together, the results reveal phase segregation in these arsenide/nitride structures, in agreement with the large miscibility gap predicted for GaAsN.

Isotope age of the rare metal pegmatite formation in the Kolmozero-Voron'ya greenstone belt (Kola region of the Fennoscandian shield): U-Pb (TIMS) microlite and tourmaline dating

NASA Astrophysics Data System (ADS)

Kudryashov, Nikolay; Lyalina, Ludmila; Mokrushin, Artem; Zozulya, Dmitry; Groshev, Nikolay; Steshenko, Ekaterina; Kunakkuzin, Evgeniy

2016-04-01

The Kolmozero-Voron'ya greenstone belt is located in the central suture zone, which separates the Murmansk block from the Central-Kola and the Keivy blocks. The belt is represented by volcano-sedimentary rocks of Archaean age of 2.9-2.5 Ga. Rare metal pegmatites (Li, Cs with accessory Nb, Ta, and Be) occur among amphibolite and gabbroid intrusions in the northwestern and southeastern parts of the belt. According to the Rb-Sr data, the age of pegmatites was considered to be 2.7 Ga. Until recently there was no generally accepted point of view on the origin of pegmatites. Now we have isotopic data for a range of rock complexes that could pretend to be parental granites for the rare metal pegmatites. These are granodiorites with the zircon age of 2733±Ma, and microcline and tourmaline granites, which Pb-Pb isochronal age on tourmaline from the tourmaline granite located near the deposit is estimated to be 2520±70 Ma. The pegmatite field of the Vasin Myl'k deposit with the lepidolite--albite--microcline--spodumene--pollucite association is located among amphibolites in the northwestern part of the belt. The deposit is represented by subparallel low-angle zoned veins up to 220 m long and 5 m thick dipping in the southeastern direction at an angle of 10° too 30°. The minerals of the columbite--tonalite group from Vasin Myl'k deposit include microlite, simpsonite, and torolite, and are the oldest among different minerals represented by several generations in pegmatites under consideration. Zircons from the pegmatites are mostly represented by crystals with the structure affected by the action of fluids that put certain restrictions on its use as a geochronometer of the crystallization process. Microlite from the pegmatite taken from the dump of a prospecting drill hole was used for U--Pb (TIMS). The mineral is represented by 0.5--1.0 mm long euhedral octahedral crystals. It is brown in color, and transparent. The microlite crystals were preliminarily cleaned from

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

PubMed

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

A major 2.1 Ga event of mafic magmatism in west Africa: An Early stage of crustal accretion

NASA Astrophysics Data System (ADS)

Abouchami, Wafa; Boher, Muriel; Michard, Annie; Albarede, Francis

1990-10-01

environments. Back-arc or low-Ti continental flood basalts provide a marginally good agreement but still face some difficulties. Oceanic flood basalts similar to those which form oceanic plateaus (e.g. in the Nauru basin) and later accreted to continents as allochtonous terranes represent the most acceptable modern analogue of many Proterozoic basalts. It is suggested that deep plumes piercing young lithosphere can generate huge amounts of tholeiites in a short time. Birimian basalts, like many Early Proterozoic basalts, may also be viewed as recent equivalents of the Archean greenstone belts. The modern komatiite of Gorgona Island is suggested to fit this model of intraplate volcanism. Although the 2.1 Ga magmatic event in West Africa has gone virtually unnoticed in the literature, it extends over several thousand kilometers and compares with the distribution of mantle-derived magmatic activity in other major orogenic provinces (e.g. Superior). It shows that the growth rate of continents cannot be extrapolated from the data obtained solely from the best studied continents (North America, Europe, Australia). If such large crustal segments were overlooked, a spurious pattern of episodic activity of the mantle could arise.

Antiquity of the biological sulphur cycle: evidence from sulphur and carbon isotopes in 2700 million-year-old rocks of the Belingwe Belt, Zimbabwe.

PubMed Central

Grassineau, N V; Nisbet, E G; Bickle, M J; Fowler, C M; Lowry, D; Mattey, D P; Abell, P; Martin, A

2001-01-01

Sulphur and carbon isotopic analyses on small samples of kerogens and sulphide minerals from biogenic and non-biogenic sediments of the 2.7 x 10(9) years(Ga)-old Belingwe Greenstone Belt (Zimbabwe) imply that a complex biological sulphur cycle was in operation. Sulphur isotopic compositions display a wider range of biological fractionation than hitherto reported from the Archaean. Carbon isotopic values in kerogen record fractionations characteristic of rubisco activity methanogenesis and methylotrophy and possibly anoxygenic photosynthesis. Carbon and sulphur isotopic fractionations have been interpreted in terms of metabolic processes in 2.7 Ga prokaryote mat communities, and indicate the operation of a diverse array of metabolic processes. The results are consistent with models of early molecular evolution derived from ribosomal RNA. PMID:11209879

Oxidative Weathering of Earth's Surface 3.7 Billion Years ago? - A Chromium Isotope Perspective

NASA Astrophysics Data System (ADS)

Frei, R.; Crowe, S.; Bau, M.; Polat, A.; Fowle, D. A.; Døssing, L. N.

2015-12-01

The Great Oxidation Event signals the first large-scale oxygenation of the atmosphere roughly 2.4 Gyr ago. Geochemical signals diagnostic of oxidative weathering, however, extend as far back as 3.3-2.9 Gyr ago. 3.8-3.7 Gyr old rocks from Isua, Greenland stand as a deep time outpost, recording information on Earth's earliest surface chemistry and the low oxygen primordial biosphere. We find positive Cr isotope values (average δ53Cr = +0.05 +/- 0.10 permil; δ53Cr = (53Cr/52Cr)sample/(53Cr/52Cr)SRM 979 - 1) x 1000, where SRM 979 denotes Standard Reference Material 979 in both the Fe and Si-rich mesobands of 7 compositionally distinct quartz-magnetite and magnesian banded iron formation (BIF) samples collected from the eastern portion of the Isua BIF (Western Greenland). These postively fractioned Cr isotopes, relative to the igneous silicate Earth reservoir, in metamorphosed BIFs from Isua indicate oxidative Cr cycling 3.8-3.7 Gyr ago. We also examined the distribution of U, which is immobile in its reduced state but mobile when it is oxidized. Elevated U/Th ratios (mean U/Th ratio of 0.70 ± 0.29) in these BIFs relative to the contemporary crust, also signal oxidative mobilization of U. We suggest that reactive oxygen species (ROS) accumulated in Earth's surface environment inducing the oxidative weathering of rocks during the deposition of the Isua BIFs. The precise threshold atmospheric O2 concentrations for the induction of Cr isotope fractionation remain uncertain, but we argue that our data are consistent with the very low levels of oxygen or other ROS indicated by other proxies. Importantly, any trace of Cr that cycled through redox reactions on land would tend both to be heavy, and to mobilize into the contemporaneous run-off more readily than Cr weathered directly as Cr(III). Once having reached the oceans, this fractionated Cr would have been stripped from seawater by Fe (oxy)hydroxides formed during the deposition of BIFs from low oxygen oceans. The

Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

NASA Astrophysics Data System (ADS)

Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

2018-05-01

The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

New constraints on the Paleoarchean meteorite bombardment of the Earth - Geochemistry and Re-Os isotope signatures of spherule layers in the BARB5 ICDP drill core from the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Schulz, Toni; Koeberl, Christian; Luguet, Ambre; van Acken, David; Mohr-Westheide, Tanja; Ozdemir, Seda; Reimold, Wolf Uwe

2017-08-01

Archean spherule layers, resulting from impacts by large extraterrestrial objects, to date represent the only remnants of the early meteorite, asteroid, and comet bombardment of the Earth. Only few Archean impact debris layers have been documented, all of them embedded in the 3.23-3.47 billion year old successions of the Barberton Greenstone Belt (BGB) in South Africa and the Pilbara Craton in Western Australia. Some of them might be correlated with each other. Given the scarcity of Archean spherule deposits, four spherule layer intersections from the recently recovered BARB5 drill core from the central Barberton Greenstone Belt, analyzed in this study, provide an opportunity to gain new insight into the early terrestrial impact bombardment. Despite being hydrothermally overprinted, siderophile element abundance signatures of spherule-rich samples from the BARB5 drill core, at least in part, retained a meteoritic fingerprint. The impact hypothesis for the generation of the BARB5 spherule layers is supported by correlations between the abundances of moderately (Cr, Co, Ni) and highly siderophile (Re, Os, Ir, Pt, Ru and Pd) elements, whose peak concentrations and interelement ratios are within the range of those for chondrites. Rhenium-Osmium isotope evidence further support the impact hypothesis. Collectively, this study provides evidence for extraterrestrial admixtures ranging between ∼40 and up to 100% to three of the four analyzed BARB5 spherule layers, and a scenario for their genesis involving (i) impact of a chondritic bolide into a sedimentary target, (ii) varying admixtures of meteoritic components to target materials, (iii) spherule formation via condensation in an impact vapor plume, (iv) transportation of the spherules and sedimentation under submarine conditions, followed by (v) moderate post-impact remobilization of transition metals and highly siderophile elements.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

Hydrogenation of GaSb/GaAs quantum rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Zhuang, Q. D.

2014-08-25

We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is verymore » likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.« less

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2011-10-01 2011-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2012-10-01 2012-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2014-10-01 2014-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2013-10-01 2013-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

Optical properties of two-dimensional GaS and GaSe monolayers

NASA Astrophysics Data System (ADS)

Jappor, Hamad Rahman; Habeeb, Majeed Ali

2018-07-01

Optical properties of GaS and GaSe monolayers are investigated using first-principles calculations. The optical properties are studied up to 35 eV. Precisely, our results demonstrated that the optical properties appearance of GaS monolayer is comparative with GaSe monolayer with few informations contrasts. Moreover, the absorption begins in the visible region, although the peaks in the ultraviolet (UV) region. The refractive index values are 1.644 (GaS monolayer) and 2.01 (GaSe monolayer) at zero photon energy limit and increase to 2.092 and 2.698 respectively and both located in the visible region. Furthermore, we notice that the optical properties of both monolayers are obtained in the ultraviolet range and the results are significant. Accordingly, it can be used as a highly promising material in the solar cell, ultraviolet optical nanodevices, nanoelectronics, optoelectronic, and photocatalytic applications.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

NASA Astrophysics Data System (ADS)

Schulze, C. S.; Huang, X.; Prohl, C.; Füllert, V.; Rybank, S.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lee, M. L.; Lenz, A.

2016-04-01

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

NASA Astrophysics Data System (ADS)

Ohori, Daisuke; Fukuyama, Atsuhiko; Sakai, Kentaro; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Ikari, Tetsuo

2017-05-01

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from as-etched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillar-based optoelectronic devices such as NP laser diodes.

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

Liu, Jie; Shen, Bo; Wang, Mao-Jun; Zhou, Yu-Gang; Chen, Dun-Jun; Zhang, Rong; Shi, Yi; Zheng, You-Dou

2004-01-01

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012 cm-2eV-1, and the time constant is about 1 mus. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

NASA Astrophysics Data System (ADS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-12-01

Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

NASA Astrophysics Data System (ADS)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

NASA Technical Reports Server (NTRS)

Masselink, W. T.; Ketterson, A.; Klem, J.; Kopp, W.; Morkoc, H.

1985-01-01

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Iron and sulfur isotope constraints on redox conditions associated with the 3.2 Ga barite deposits of the Mapepe Formation (Barberton Greenstone Belt, South Africa)

NASA Astrophysics Data System (ADS)

Busigny, Vincent; Marin-Carbonne, Johanna; Muller, Elodie; Cartigny, Pierre; Rollion-Bard, Claire; Assayag, Nelly; Philippot, Pascal

2017-08-01

The occurrence of Early Archean barite deposits is intriguing since this type of sediment requires high availability of dissolved sulfate (SO42-), the oxidized form of sulfur, although most authors argued that the Archean eon was dominated by reducing conditions, with low oceanic sulfate concentration (<10 μM) relative to present day levels of 28,000 μM. In order to better assess the redox state of the paleo-atmosphere and -oceans, we examined Fe and S isotope compositions in a sedimentary sequence from the 3.2 Ga-old Mendon and Mapepe formations (Kaapvaal craton, South Africa), recovered from the drill-core BBDP2 of the Barberton Barite Drilling Project. Major elements were also analyzed to constrain the respective imprints of detrital vs metasomatic processes, in particular using Al, Ti and K interrelations. Bulk rock Fe isotope compositions are linked to mineralogy, with δ56Fe values varying between -2.04‰ in Fe sulfide-dominated barite beds, to +2.14‰ in Fe oxide-bearing cherts. δ34S values of sulfides vary between -10.84 and +3.56‰, with Δ33S in a range comprised between -0.35 and +2.55‰, thus supporting an O2-depleted atmosphere (<10-5 PAL). Iron isotope variations together with major element correlations show that, although the sediments experienced a pervasive stage of hydrothermal alteration, the rocks preserved a primary/authigenic signature predating subsequent hydrothermal stage. Highly positive δ56Fe values recorded in primary Fe-oxides from ferruginous cherts support partial Fe oxidation in a reducing oceanic environment (O2 < 10-4 μM), but are incompatible with a model of complete oxidation at the redox boundary of a stratified water column. Iron oxide precipitation under low O2 levels was likely mediated by anoxygenic photosynthesis, and/or abiotic photo-oxidation processes. Our results are consistent with global anoxic conditions in the 3.2 Ga-old sediments, implying that the barite deposits were most likely sourced by atmospheric

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, C. S.; Prohl, C.; Füllert, V.

2016-04-04

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration ofmore » III-V optoelectronic components into silicon-based technology.« less

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Growth and characterization of GaAs/Al/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, P.; Oh, J.E.; Singh, J.

Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been investigated. In these heterostructures the GaAs on top of the buried metal layer is grown by migration-enhanced epitaxy (MEE) at low temperatures (200 and 400 {degree}C) to provide a kinetic barrier to the outdiffusion of Al during superlayer growth. The crystallinity and orientation of the Al film itself deposited on (100) GaAs at {approx}0 {degree}C was studied by transmission electron diffraction, dark-field imaging, and x-ray diffraction measurements. It is found that the Al growth is polycrystalline with a grain size {approx}60 A and the preferred growth orientation ismore » (111), which may be textured in plane but oriented out of plane. The quality of the GaAs superlayer grown on top of Al by MEE is very sensitive to the growth temperature. The layer grown at 400 {degree}C has good structural and optical quality, but is accompanied by considerable outdiffusion of Al at the Al-GaAs heterointerface. At 200 {degree}C, where the interface has good structural integrity, the superlayer exhibits twinning and no luminescence is observed.« less

Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE

NASA Astrophysics Data System (ADS)

Pitts, O. J.; Watkins, S. P.; Wang, C. X.; Stotz, J. A. H.; Meyer, T. A.; Thewalt, M. L. W.

2004-09-01

Heterostructures containing monolayer (ML) and submonolayer GaSb insertions in GaAs were grown using organometallic vapour phase epitaxy. At the GaAs-on-GaSb interface, strong intermixing occurs due to the surface segregation of Sb. To form structures with relatively abrupt interfaces, a flashoff growth sequence, in which growth interruptions are employed to desorb Sb from the surface, was introduced. Reflectance-difference spectroscopy and high-resolution X-ray diffraction data demonstrate that interfacial grading is strongly reduced by this procedure. For layer structures grown with the flashoff sequence, a GaSb coverage up to 1 ML can be obtained in the two-dimensional (2D) growth mode. For uncapped GaSb layers, on the other hand, atomic force microscope images show that the 2D-3D growth mode transition occurs at a submonolayer coverage between 0.3 and 0.5 ML. Low-temperature photoluminescence spectra of multiple quantum well samples grown using the flashoff sequence show a strong quantum well-related peak which shifts to lower energies as the amount of Sb incorporated increases. The PL peak energies are consistent with a type-II band lineup at the GaAs/GaSb interface.

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

NASA Astrophysics Data System (ADS)

Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Chen, P.; Fonstad, C. G.

2005-12-01

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

PubMed

Zhou, Xiaorun; Lu, Taiping; Zhu, Yadan; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

2017-12-01

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H 2 ) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H 2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H 2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H 2 proportion further increases, stress relaxation and H 2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

NASA Astrophysics Data System (ADS)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw

2015-02-09

The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which canmore » be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.« less

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Gheshlaghi, N.; Sözen, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-04-01

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

NASA Astrophysics Data System (ADS)

Shoji, Yasushi; Tamaki, Ryo; Okada, Yoshitaka

2017-06-01

We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment. For both SCs, the external quantum efficiency (EQE) increased in the longer wavelength region beyond GaAs bandedge wavelength of λ > 870 nm due to an additive contribution from GaSb/GaAs QD or QR layers inserted in the intrinsic region of p-i-n SC structure. The EQE of GaSb/GaAs QRSC was higher than that of QDSC at room temperature and the photoluminescence intensity from GaSb/GaAs QRs was stronger compared with GaSb/GaAs QDs. These results indicate that crystal quality of GaSb/GaAs QRs is superior to that of GaSb/GaAs QDs. Furthermore, a photocurrent production due to two-step photo-absorption via GaSb/GaAs QD states or QR states, ΔEQE was measured at low temperature and the ratio of two-step absorption to total carrier extraction defined as ΔEQE / (ΔEQE + EQE), was higher for GaSb/GaAs QRSC than that of QDSC. The ratio of GaSb/GaAs QRSC exceeds 80% over the wavelength region of λ = 950 - 1250 nm. This suggests that two-step absorption process is more dominant for carrier extraction from GaSb/GaAs QR structure.

Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs

NASA Astrophysics Data System (ADS)

Tan, T. Y.; You, H.-M.; Gösele, U. M.

1993-03-01

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, V {Ga/3-}, has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V {Ga/3-}concentration, C_{V_{_{Ga} }^{3 - } }^{eq} (n), has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the C_{V_{_{Ga} }^{3 - } }^{eq} (n) value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This C_{V_{_{Ga} }^{3 - } }^{eq} (n) property provides explanations to a number of outstanding experimental results, either requiring the interpretation that V {Ga/3-}has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena.

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 1 2010-10-01 2010-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...′ N. longitude 81°02.3′ W. (St. Catherines Sound Buoy “St. C.”); thence to latitude 31°31.2′ N...

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

NASA Astrophysics Data System (ADS)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

A convenient route to [68Ga]Ga-MAA for use as a particulate PET perfusion tracer.

PubMed

Mathias, Carla J; Green, Mark A

2008-12-01

A convenient method is described for compounding [(68)Ga]Ga-MAA (MAA=macroaggregated human serum albumin) with the eluate of a commercially available TiO(2)-based (68)Ge/(68)Ga generator. The final [(68)Ga]Ga-MAA product was obtained with an 81.6+/-5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8+/-0.1% (n=5). Microscopic examination showed the [(68)Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [(68)Ga]Ga-MAA suspension, could be completed in 25 min. Only 4.4+/-0.9% of the total (68)Ge breakthrough remaining associated with the final [(68)Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [(68)Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use.

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

NASA Astrophysics Data System (ADS)

Leach, J. H.; Wu, M.; Morkoç, H.; Liberis, J.; Šermukšnis, E.; Ramonas, M.; Matulionis, A.

2011-11-01

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total charge in the channel (the electron sheet density) but rather the electron density profile. This is demonstrated by comparing two structures with equal sheet densities (1 × 1013 cm-2), but with different density profiles. The camelback channel profile exhibits a shorter hot-phonon lifetime of ˜270 fs as compared with ˜500 fs reported for a standard Al0.33Ga0.67N/AlN/GaN channel at low supplied power levels. When supplied power is sufficient to heat the electrons > 600 K, ultrafast decay of hot phonons is observed in the case of the composite channel structure. In this case, the electron density profile spreads to form a camelback profile, and hot-phonon lifetime reduces to ˜50 fs.

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Koichi, E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Yokoyama, Masafumi; Kim, Sanghyeon

2014-01-21

We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the processmore » temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.« less

Electrical contact of wurtzite GaN mircrodisks on p-type GaN template

NASA Astrophysics Data System (ADS)

Tsai, Cheng-Da; Lo, Ikai; Wang, Ying-Chieh; Hsu, Yu-Chi; Shih, Cheng-Hung; Pang, Wen-Yuan; You, Shuo-Ting; Hu, Chia-Hsuan; Chou, Mitch M. C.; Yang, Chen-Chi; Lin, Yu-Chiao

2015-03-01

We developed a back processing to fabricate a secure electrical contact of wurtzite GaN microdisk on a transparent p-type GaN template with the orientation, [10-10]disk // [10-10]template. GaN microdisks were grown on LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. In the further study, we analyzed the TEM specimen of a sample with annealed GaN microdisk/p-typed GaN template by selection area diffraction (SAD) to confirm the alignment of the microdisks with the template at the interface. From the I-V measurements performed on the samples, we obtained a threshold voltage of ~ 5.9 V for the current passing through the GaN microdisks with a resistance of ~ 45 K Ω. The electrical contact can be applied to the nanometer-scaled GaN light-emitting diode.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

NASA Astrophysics Data System (ADS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-11-01

A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

A Convenient Route to [68Ga]Ga-MAA for Use as a Particulate PET Perfusion Tracer

PubMed Central

Mathias, Carla J.; Green, Mark A.

2008-01-01

A convenient method is described for compounding [68Ga]Ga-MAA (MAA = macroaggregated human serum albumin) with the eluate of a commercially available TiO2-based 68Ge/68Ga generator. The final [68Ga]Ga-MAA product was obtained with an 81.6 ± 5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8 ± 0.1% (n = 5). Microscopic examination showed the [68Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [68Ga]Ga-MAA suspension, could be completed in 25 minutes. Only 4.4 ± 0.9% of the total 68Ge breakthrough remaining associated with the final [68Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [68Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use. PMID:18640845

Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

DOE PAGES

Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; ...

2009-01-01

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

Propriétés électriques d'hétérostructures a-GaAs/c-GaAs(n) et de structures de type MIS a-GaAsN/c-GaAs(n)

NASA Astrophysics Data System (ADS)

Aguir, K.; Fennouh, A.; Carchano, H.; Lollman, D.

1995-10-01

Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN on c-GaAs. I(V) and C(V) measurements were performed to determine electrical properties of these structures. The a-GaAs/c-GaAs(n) heterojunctions present a p-n junction like behaviour. The characteristics of the a-GaAsN/c-GaAs(n) heterojunctions present a MIS like structure behaviour with some imperfections. A fixed positive charge was detected and a density of interface states of about 10^{11} eV^{-1}cm^{-2} was evaluated. L'étude porte sur des couches minces de GaAs et de GaAsN amorphes déposées par pulvérisation cathodique RF réactive sur des substrats de GaAs cristallin. Les caractéristiques électriques I(V) et C(V) ont été mesurées. Les hétérojonctions a-GaAs/c-GaAs(n) présentent un effet redresseur. Cet effet laisse place à une caractéristique symétrique avec une forte atténuation de l'intensité du courant pour les structures a-GaAsN/cGaAs(n). Les structures réalisées ont alors un comportement semblable à celui d'une structure MIS imparfaite. L'existence d'une charge positive fixe dans le a-GaAsN a été mise en évidence. La densité des états d'interface au milieu de la bande interdite est évaluée à quelques 10^{11} cm^{-2}eV^{-1}.

Exploring the radiosynthesis and in vitro characteristics of [68 Ga]Ga-DOTA-Siglec-9.

PubMed

Jensen, Svend B; Käkelä, Meeri; Jødal, Lars; Moisio, Olli; Alstrup, Aage K O; Jalkanen, Sirpa; Roivainen, Anne

2017-07-01

Vascular adhesion protein 1 is a leukocyte homing-associated glycoprotein, which upon inflammation rapidly translocates from intracellular sources to the endothelial cell surface. It has been discovered that the cyclic peptide residues 283-297 of sialic acid-binding IgG-like lectin 9 (Siglec-9) "CARLSLSWRGLTLCPSK" bind to vascular adhesion protein 1 and hence makes the radioactive analogues of this compound ([ 68 Ga]Ga-DOTA-Siglec-9) interesting as a noninvasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 are presented and compared with previously published methods. A simple, robust radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 with a yield of 62% (non decay-corrected) was identified, and it had a radiochemical purity >98% and a specific radioactivity of 35 MBq/nmol. Furthermore, the protein binding and stability of [ 68 Ga]Ga-DOTA-Siglec-9 were analyzed in vitro in mouse, rat, rabbit, pig, and human plasma and compared with in vivo pig results. The plasma in vitro protein binding of [ 68 Ga]Ga-DOTA-Siglec-9 was the lowest in the pig followed by rabbit, human, rat, and mouse. It was considerably higher in the in vivo pig experiments. The in vivo stability in pigs was lower than the in vitro stability. Despite considerable species differences, the observed characteristics of [ 68 Ga]Ga-DOTA-Siglec-9 are suitable as a positron emission tomography tracer. Copyright © 2017 John Wiley & Sons, Ltd.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

NASA Astrophysics Data System (ADS)

Gilet, Ph.; Pougeoise, E.; Grenouillet, L.; Grosse, Ph.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gérard, J. M.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.

2007-02-01

In this article, we report our results on 1.3μm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Preliminary PET/CT Imaging with Somatostatin Analogs [68Ga]DOTAGA-TATE and [68Ga]DOTAGA-TOC.

PubMed

Satpati, Drishty; Shinto, Ajit; Kamaleshwaran, K K; Sarma, Haladhar Dev; Dash, Ashutosh

2017-12-01

Somatostatin receptor positron emission tomography/X-ray computed tomography (SSTR-PET/CT) is a well-established technique for staging and detection of neuroendocrine tumors (NETs). Ga-68-labeled DOTA-conjugated octreotide analogs are the privileged radiotracers for diagnosis and therapeutic monitoring of NETs. Hence, we were interested in assessing the influence of promising, newer variant DOTAGA on the hydrophilicity, pharmacokinetics, and lesion pick-up of somatostatin analogs. Herein, the potential of ([ 68 Ga]DOTAGA, Tyr 3 , Thr 8 ) octreotide ([ 68 Ga]DOTAGA-TATE) and ([ 68 Ga]DOTAGA, Tyr 3 ) octreotide ([ 68 Ga]DOTAGA-TOC) as NET imaging agents has been investigated. Amenability of [ 68 Ga]DOTAGA-(TATE/TOC) to kit-type formulation has been demonstrated. Biodistribution studies were carried out in normal rats at 1 h post-injection (p.i.). [ 68 Ga]DOTAGA-(TATE/TOC) PET/CT scans were carried out in patients (70-170 MBq, 1 h p.i.) with histologically confirmed well-differentiated NETs. [ 68 Ga]DOTAGA-TATE exhibited hydrophilicity similar to [ 68 Ga]DOTA-TATE (log P = -3.51 vs -3.69) whereas [ 68 Ga]DOTAGA-TOC was more hydrophilic than [ 68 Ga]DOTA-TOC (log P = -3.27 vs -2.93). [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTA-TATE showed almost identical blood and kidney uptake in normal rats whereas significantly fast clearance (p < 0.05) of [ 68 Ga]DOTAGA-TATE was observed from other non-specific organs (liver, lungs, spleen, intestine). [ 68 Ga]DOTAGA-TOC also demonstrated rapid clearance from blood and kidneys (p < 0.05) in comparison to [ 68 Ga]DOTA-TOC. The metastatic lesions in NET patients were well identified by [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTAGA-TOC. The phenomenal analogy was observed between [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTA-TATE as well as between [ 68 Ga]DOTAGA-TOC and [ 68 Ga]DOTA-TOC in biodistribution studies in rats. The good lesion detection ability of the two radiotracers indicates their potential as NET imaging radiotracers.

Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures

NASA Astrophysics Data System (ADS)

Wang, Xue; Li, Shunfeng; Mohajerani, Matin Sadat; Ledig, Johannes; Wehmann, Hergo-Heinrich; Mandl, Martin; Strassburg, Martin; Steegmüller, Ulrich; Jahn, Uwe; Lähnemann, Jonas; Riechert, Henning; Griffiths, Ian; Cherns, David; Waag, Andreas

2013-06-01

Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned SiOx/GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous growth mode. The key parameters and the physical principles of growth of Ga-polar GaN three-dimensional columns are identified, and their potential for manipulating the growth process is discussed. High aspect ratio columns have been achieved using silane during the growth, leading to n-type columns. The vertical growth rate increases with increasing silane flow. In a core-shell columnar LED structure, the shells of InGaN/GaN multi quantum wells and p-GaN have been realized on a core of n-doped GaN column. Cathodoluminescence gives insight into the inner structure of these core-shell LED structures.

Greenstone-hosted lode-gold mineralization at Dungash mine, Eastern Desert, Egypt

NASA Astrophysics Data System (ADS)

Zoheir, Basem; Weihed, Pär

2014-11-01

The auriferous quartz ± carbonate veins at Dungash mine, central Eastern Desert of Egypt, are confined to ∼E-trending dilation zones within variably foliated/sheared metavolcanic/volcaniclastic rocks. The vein morphology and internal structures demonstrate formation concurrent with a dextral shear system. The latter is attributed to flexural displacement of folded, heterogeneous rock blocks through transpression increment, late in the Neoproterozoic deformation history of the area. Geochemistry of the host metavolcanic/metavolcaniclastic rocks from the mine area suggests derivation from a low-K, calc-alkaline magma in a subduction-related, volcanic arc setting. In addition, chemistry of disseminated Cr-spinels further constrain on the back-arc basin setting and low-grade metamorphism, typical of gold-hosting greenstone belts elsewhere. Mineralogy of the mineralized veins includes an early assemblage of arsenopyrite-As-pyrite-gersdorffite ± pyrrhotite, a transitional pyrite-Sb-arsenopyrite ± gersdorffite assemblage, and a late tetrahedrite-chalcopyrite-sphalerite-galena-gold assemblage. Based on arsenopyrite and chlorite geothermometers, formation of gold-sulfide mineralization occurred between ∼365 and 280 °C. LA-ICP-MS measurements indicate the presence of refractory Au in arsenian pyrite (up to 53 ppm) and Sb-bearing arsenopyrite (up to 974 ppm). Abundant free-milling gold associated with the late sulfide assemblage may have been mobilized and re-distributed by circulating, lower temperature ore fluids in the waning stages of the hydrothermal system. Based on the isotopic values of vein quartz and carbonate, the calculated average δ18OH2O values of the ore fluids are 5.0 ± 1.4‰ SMOW for quartz, and 3.3 ± 1.4‰ for vein carbonate. The measured carbonate δ13C values correspond to ore fluids with δ13CCO2 = -6.7 ± 0.7‰ PDB. These results suggest a mainly metamorphic source for ore fluids, in good agreement with the vein morphology, textures and

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

PubMed

Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

2015-12-01

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Moudakir, T.; Abid, M.; Doan, B.-T.; Demarly, E.; Gautier, S.; Orsal, G.; Jacquet, J.; Ougazzaden, A.; Genty, F.

2010-10-01

Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.

3.30 Ga high-silica intraplate volcanic-plutonic system of the Gavião Block, São Francisco Craton, Brazil: Evidence of an intracontinental rift following the creation of insulating continental crust

NASA Astrophysics Data System (ADS)

Zincone, Stefano A.; Oliveira, Elson P.; Laurent, Oscar; Zhang, Hong; Zhai, Mingguo

2016-12-01

High-silica rhyolites having U-Pb zircon ages of 3303 ± 11 Ma occur along the eastern border of the Gavião Block (Brazil) associated with the Contendas-Mirante and Mundo Novo supracrustal belts. Unlike many Archean greenstone sequences, they are not interlayered with mafic to intermediate units. Instead, they belong to an inter-related plutonic-volcanic system, together with granitic massifs having similar zircon crystallization ages of ca. 3293 ± 3 Ma and 3328 ± 3 Ma and plotting along the same geochemical trends as the rhyolites. The rhyolites show well-preserved primary volcanic features such as magma flow textures and euhedral phenocrysts. High emplacement temperatures are indicated by petrographic evidence (β-quartz phenocrysts), zircon saturation temperatures (915-820 °C) and geochemical data, especially high SiO2 (74-79 wt.%) together with elevated Fe2O3(T) ( 3 wt.%), MgO (0.5-1.5 wt.%) and low Al2O3 (< 11 wt.%). The rhyolites show homogeneous trace element ratios (La/YbN 4.8 ± 1.8; EuN/Eu* 0.55; Sr/Y 0.7) and negative ԐHf(3.3 Ga) from 0 to - 7, indicating derivation from a single crustal source for both occurrences. Specifically, the rhyolites would have derived from extraction and eruption of highly silicic residual liquid formed by crystallization of granitic magma in a relatively shallow (< 10 km) reservoir, now represented by the granite massifs. The granite magma was formed by melting or differentiation of material similar to the diorite gneiss that occurs regionally. The 3.30 Ga volcanic-plutonic systems formed after a period of crustal growth and stabilization of a thick continental lithosphere, represented by massive 3.40-3.33 Ga TTG and medium to high-K calk-alkaline magmatism in the Gavião Block. The 3.30 Ga-old rhyolites and granites would therefore have formed in an intracontinental tectonic setting after the formation and stabilization of new continental crust, and accordingly would represent the first stages of rifting and continental

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2015-02-07

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, andmore » therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.« less

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

PubMed Central

Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; Koyama, Tadanobu; Momose, Yoshimi; Sakata, Kaoruho; Ozawa, Tetsuo; Okano, Yasunori; Inatomi, Yuko; Hayakawa, Yasuhiro

2016-01-01

InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B. PMID:28725736

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station.

PubMed

Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; Koyama, Tadanobu; Momose, Yoshimi; Sakata, Kaoruho; Ozawa, Tetsuo; Okano, Yasunori; Inatomi, Yuko; Hayakawa, Yasuhiro

2016-01-01

InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.

Site-controlled InGaN/GaN single-photon-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roul, Basanta; Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560013

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

A Theoretical Study of Self Assembled InAs/GaAs and InAs/GaP/GaAs Quantum Dots: Effects of Strain Balancing

NASA Astrophysics Data System (ADS)

Lin, Yih-Yin; Singh, Jasprit

2002-03-01

The past few years have been considerable efforts in growth and device application of self-assembled quantum dots. Quantum dots based on the InAs/GaAs system have been widely studied for lasers and detectors. In these structures InAs is under a large compressive strain making it difficult to have a large number stacked InAs/GaAs dots. In this paper we examine self assembled dots based on using GaAs as a substrate but using a GaAsP region to counterbalance the compressive strain in the InAs region allowing for a lower overall strain energy. We will present a comparison of the InAs/GaAs and InAs/GaAsP/GaAs self assembled dots by examining the strain energy per unit volume and the electronic spectra. The strain energy is calculated using the valence force field method and the electronic spectra is calculated using the 8 band k -- p method. The effective energy bandgap of the same size InAs dot in GaAs matrice is found 0.952 eV and is 0.928 eV in GaAs_0.8P_0.2 matrice.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Electron and proton degradation in /AlGa/As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Knechtli, R. C.; Kamath, G. S.; Goldhammer, L.; Anspaugh, B.

1978-01-01

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

GaAsP solar cells on GaP/Si with low threading dislocation density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan

2016-07-18

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The resultsmore » in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.« less

Degradation Mechanisms for GaN and GaAs High Speed Transistors

PubMed Central

Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

2012-01-01

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Yao; National Institute for Materials Science, Tsukuba, Ibaraki 305-0044; Sun, Huabin

2015-05-15

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, whichmore » influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.« less

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

PubMed Central

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-01-01

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

PubMed

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-08-24

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

NASA Astrophysics Data System (ADS)

Mori, Takuma; Egawa, Takashi; Miyoshi, Makoto

2017-08-01

We conducted the study on the growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well (MQW) structures by metalorganic chemical vapor deposition (MOCVD). It was found that the sum of InGaN well thickness t well_total was a predominant factor to form the rough surface, in addition to the growth temperature as low as 800 °C for the p-GaN layers. Microstructure analyses revealed that the rough surfaces consisted of a certain number of hexagonal V-shaped pits starting from dislocations propagated through an under layer and they increased with the increased t well_total. It was confirmed that the light absorption was enlarged for MQW structure samples with rough-surface p-GaN layers on the top, owing to not only the thickness effect in MQWs but also their reduced light reflection on the surfaces. It was also confirmed that these optical properties contributed to the performance improvement in InGaN/GaN MQW solar cells.

Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

NASA Astrophysics Data System (ADS)

Luna, E.; Delorme, O.; Cerutti, L.; Tournié, E.; Rodriguez, J.-B.; Trampert, A.

2018-04-01

Using transmission electron microscopy, we present an in-depth microstructural analysis of a series of Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells grown on GaSb(001) substrates by molecular beam epitaxy. Despite the dilute bismide compound Ga(Sb,Bi) is regarded as a highly-mismatched alloy, we find that the material is of remarkable structural perfection, even up to 11%-14% Bi, the maximum Bi concentration incorporated into GaSb so far. No extended defects, nanoclusters, or composition modulations are detectable in the pseudomorphic layers. In addition, the quantum wells exhibit regular and homogeneous morphologies including smooth and stable interfaces with a chemical width on the same order as in other high-quality III-V heterointerfaces. These results may give reasons for the recent successful realization of mid-infrared lasers with room temperature operation based on the very same quantum well structures.

Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

PubMed

Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

2008-10-01

Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

Transition From Archean Plume-Arc Orogens to Phanerozoic Style Convergent Margin Orogens, and Changing Mantle Lithosphere

NASA Astrophysics Data System (ADS)

Kerrich, R.; Jia, Y.; Wyman, D.

2001-12-01

Mantle plume activity was more intense in the Archean and komatiite-basalt volcanic sequences are a major component of many Archean greenstone belts. Tholeiitic basalts compositionally resemble Phanerozoic and Recent ocean plateau basalts, such as those of Ontong Java and Iceland. However, komatiite-basalt sequences are tectonically imbricated with bimodal arc lavas and associated trench turbidites. Interfingering of komatiite flows with boninite series flows, and primitive to evolved arc basalts has recently been identified in the 2.7 Ga Abitibi greenstone belt, demonstrating spatially and temporally associated plume and arc magmatism. These observations are consistent with an intra-oceanic arc migrating and capturing an ocean plateau, where the plateau jams the arc and imbricated plateau-arc crust forms a greenstone belt orogen. Melting of shallowly subducted plateau basalt crust (high Ba, Th, LREE) accounts for the areally extensive and voluminous syntectonic tonalite batholiths. In contrast, the adakite-Mg-andesite-Niobium enriched basalt association found in Archean greenstone belts and Cenozoic arcs are melts of LREE depleted MORB slab. Buoyant residue from anomalously hot mantle plume melting at > 100km rises to couple with the composite plume-arc crust to form the distinctively thick and refractory Archean continental lithospheric mantle. New geochemical data for structurally hosted ultramafic units along the N. American Cordillera, from S. California to the Yukon, show that these are obducted slices of sub-arc lithospheric mantle. Negatively fractionated HREE with high Al2O3/TiO2 ratios signify prior melt extraction, and variably enriched Th and LREE with negative Nb anomalies a subduction component in a convergent margin. A secular decrease of mantle plume activity and temperature results in plume-arc dominated geodynamics in the Archean with shallow subduction and thick CLM, whereas Phanerozoic convergent margins are dominated by arc-continent, arc

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

NASA Astrophysics Data System (ADS)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Carrier Concentration Control of GaSb/GaInAsSb System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazzari, J.-L.; Anda, F. de; Nieto, J.

2007-02-22

The residual carrier concentration of GaSb and GaSb-lattice matched Ga1-xInxAsySb1-y alloys (x = 0.12-0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p {approx} 2-3x1016 cm-3 were obtained for undoped GaSb grown by MBE at 480 deg. C, by LPE from Ga-rich melt at low temperature (400 deg. C), and by LPE from Sb-rich melts at {approx}600 deg. C. The native acceptor defect responsible of the high p-type residual doping in GaSb is reduced when the indium concentrationmore » is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n-type doping in the (0.05-30)x1017 cm-3 range. A maximum of free carrier concentration was 1.5x1018 cm-3 for LPE layers, 2x1018 cm-3 for MBE layers grown at 1.0 {mu}m/h, 3.5x1018 cm-3 for MBE layers grown at 0.2 {mu}m/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of ternary GaSb1-xTex solid solution.« less

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

DOE PAGES

Limbach, F.; Gotschke, T.; Stoica, T.; ...

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Höfling, S.; Worschech, L.; Grützmacher, D.

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

X-ray probe of GaN thin films grown on InGaN compliant substrates

NASA Astrophysics Data System (ADS)

Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua

2013-04-01

GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Neeraj; Department of Materials Science, Gulbarga University, Gulbarga 585106; Roul, Basanta, E-mail: basantaroul@gmail.com

2015-01-15

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore » InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.« less

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

Measurement of second order susceptibilities of GaN and AlGaN

NASA Astrophysics Data System (ADS)

Sanford, N. A.; Davydov, A. V.; Tsvetkov, D. V.; Dmitriev, A. V.; Keller, S.; Mishra, U. K.; DenBaars, S. P.; Park, S. S.; Han, J. Y.; Molnar, R. J.

2005-03-01

Rotational Maker fringes, scaled with respect to χ11(2) of crystalline quartz, were used to determine the second order susceptibilities χ31(2) and χ33(2) for samples of thin AlxGa1-xN films, a thicker GaN film, and a free-standing GaN platelets. The pump wavelength was 1064nm. The AlxGa1-xN samples, ranging in thickness from roughly 0.5to4.4μm, were grown by metalorganic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE) on (0001) sapphire substrates. The Al mole fractions x were 0, 0.419, 0.507, 0.618, 0.660, and 0.666, for the MOCVD-grown samples, and x =0, 0.279, 0.363, and 0.593 for the HVPE-grown samples. An additional HVPE-grown GaN sample ˜70μm thick was also examined. The free-standing bulk GaN platelets consisted of an HVPE grown film ˜226μm thick removed from its growth substrate, and a crystal ˜160μm thick grown by high-pressure techniques. For the AlxGa1-xN samples, the magnitudes of χ31(2) and χ33(2) decrease roughly linearly with increasing x and extrapolate to ˜0 for x =1. Furthermore, the constraint expected for a perfect wurtzite structure, namely χ33(2)=-2χ31(2), was seldom observed, and the samples with x =0.660 and x =0.666 showed χ31(2) and χ33(2) having the same sign. These results are consistent with the theoretical studies of nonlinear susceptibilities for AlN and GaN performed by Chen et al. [Appl. Phys. Lett. 66, 1129 (1995)]. The thicker bulk GaN samples displayed a complex superposition of high- and low-frequency Maker fringes due to the multiple-pass interference of the pump and second-harmonic generation beams, and the nonlinear coefficients were approximately consistent with those measured for the thin-film GaN sample.

Zircon U-Pb ages and Hf isotope data from the Kukuluma Terrain of the Geita Greenstone Belt, Tanzania Craton: Implications for stratigraphy, crustal growth and timing of gold mineralization

NASA Astrophysics Data System (ADS)

Kwelwa, S. D.; Sanislav, I. V.; Dirks, P. H. G. M.; Blenkinsop, T.; Kolling, S. L.

2018-03-01

The Geita Greenstone Belt is a late Archean greenstone belt located in the Tanzania Craton, trending approximately E-W and can be subdivided into three NW-SE trending terrains: the Kukuluma Terrain to the east, the Central Terrain in the middle and the Nyamullilima Terrain in the west. The Kukuluma Terrain, forms a NW-SE trending zone of complexly deformed sediments, intruded by the Kukuluma Intrusive Complex which, contains an early-syntectonic diorite-monzonite suite and a late-syntectonic granodiorite suite. Three gold deposits (Matandani, Kukuluma and Area 3W) are found along the contact between the Kukuluma Intrusive Complex and the sediments. A crystal tuff layer from the Kukuluma deposits returned an age of 2717 ± 12 Ma which can be used to constrain maximum sedimentation age in the area. Two granodiorite dykes from the same deposit and a small granodiorite intrusion found along a road cut yielded zircon ages of 2667 ± 17 Ma, 2661 ± 16 Ma and 2663 ± 11 Ma respectively. One mineralized granodiorite dyke from the Matandani deposit has an age of 2651 ± 14 Ma which can be used to constrain the maximum age of the gold mineralization in the area. The 2717 Ma crystal tuff has zircon grains with suprachondritic 176Hf/177Hf ratios (0.28108-0.28111 at 2717 Ma) and positive (+1.6 to +2.6) εHf values indicating derivation from juvenile mafic crust. Two of the granodiorite samples have suprachondritic 176Hf/177Hf ratios (avg. 0.28106 and 0.28107 at 2663 and 2651 Ma respectively) and nearly chondritic εHf values (avg. -0.5 and -0.3 respectively). The other two granodiorite samples have chondritic 176Hf/177Hf ratios (avg. 0.28104 and 0.28103 at 2667 and 2661 Ma respectively) and slightly negative εHf values (avg. -1.1 and -1.5 respectively). The new zircon age and isotope data suggest that the igneous activity in the Kukuluma Terrain involves a significant juvenile component and occurred within the 2720 to 2620 Ma period which, is the main period of crustal growth

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

NASA Astrophysics Data System (ADS)

Meneghesso, G.; Meneghini, M.; Rossetto, I.; Canato, E.; Bartholomeus, J.; De Santi, C.; Trivellin, N.; Zanoni, E.

2017-02-01

GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase. For this reason, studying the stability and reliability of these devices under high stress conditions is of high importance. This paper reports on our most recent results on the field- and time-dependent degradation of GaN-HEMTs with p-GaN gate submitted to stress with positive gate bias. Based on combined step-stress experiments, constant voltage stress and electroluminescence testing we demonstrated that: (i) when submitted to high/positive gate stress, the transistors may show a negative threshold voltage shift, that is ascribed to the injection of holes from the gate metal towards the p-GaN/AlGaN interface; (ii) in a step-stress experiment, the analyzed commercial devices fail at gate voltages higher than 9-10 V, due to the extremely high electric field over the p-GaN/AlGaN stack; (iii) constant voltage stress tests indicate that the failure is also time-dependent and Weibull distributed. The several processes that can explain the time-dependent failure are discussed in the following.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

NASA Astrophysics Data System (ADS)

Nechaev, D. V.; Semenov, A. N.; Koshelev, O. A.; Jmerik, V. N.; Davydov, V. Yu; Smirnov, A. N.; Pozina, G.; Shubina, T. V.; Ivanov, S. V.

2017-11-01

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (μ-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Microcathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.

Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

NASA Astrophysics Data System (ADS)

Saarinen, K.; Suski, T.; Grzegory, I.; Look, D. C.

2001-12-01

We have applied positron annihilation spectroscopy to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1 cm-1. The Ga vacancies recover in long-range migration processes at 500-600 K with an estimated migration energy of 1.5 (2) eV. Since the native Ga vacancies in as-grown GaN survive up to much higher temperatures (1300-1500 K), we conclude that they are stabilized by forming complexes with oxygen impurities. The estimated binding energy of 2.2 (4) eV of such complexes is in good agreement with the results of theoretical calculations.

Ab initio phonon thermal transport in monolayer InSe, GaSe, GaS, and alloys

NASA Astrophysics Data System (ADS)

Pandey, Tribhuwan; Parker, David S.; Lindsay, Lucas

2017-11-01

We compare vibrational properties and phonon thermal conductivities (κ) of monolayer InSe, GaSe, and GaS systems using density functional theory and Peierls-Boltzmann transport methods. In going from InSe to GaSe to GaS, system mass decreases giving both increasing acoustic phonon velocities and decreasing scattering of these heat-carrying modes with optic phonons, ultimately giving {κ }{InSe}< {κ }{GaSe}< {κ }{GaS}. This behavior is demonstrated by correlating the scattering phase space limited by fundamental conservation conditions with mode scattering rates and phonon dispersions for each material. We also show that, unlike flat monolayer systems such as graphene, in InSe, GaSe and GaS thermal transport is governed by in-plane vibrations. Alloying of InSe, GaSe, and GaS systems provides an effective method for modulating their κ through intrinsic vibrational modifications and phonon scattering from mass disorder giving reductions ˜2-3.5 times. This disorder also suppresses phonon mean free paths in the alloy systems compared to those in their crystalline counterparts. This work provides fundamental insights of lattice thermal transport from basic vibrational properties for an interesting set of two-dimensional materials.

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Desrat, W.; Moret, M.; Briot, O.; Ngo, T.-H.; Piot, B. A.; Jabakhanji, B.; Gil, B.

2018-04-01

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

PubMed Central

Wu, Qing; Liu, Yu; Wang, Hailong; Li, Yuan; Huang, Wei; Zhao, Jianhua; Chen, Yonghai

2017-01-01

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization. PMID:28084437

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

33 CFR 80.717 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Tybee Island, GA to St. Simons..., GA to St. Simons Island, GA. (a) A line drawn from the southernmost extremity of Savannah Beach on....4′ W.) drawn from the southernmost extremity of Ossabaw Island to St. Catherines Island. (e) A north...

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

Petrology of Teofilândia granitoids: An example of 2.1 Ga crustal accretion in the São Francisco Craton (Bahia, Brazil)

NASA Astrophysics Data System (ADS)

Nascimento, H. S.; Nédélec, Anne; Bouchez, Jean-Luc

2017-07-01

Teofilândia granitoids are representative of the Paleoproterozoic plutonic rocks, which intruded the Serrinha block, an Archean crustal fragment of the Sao Francisco Craton (Bahia, Brazil). Three plutons were emplaced, the Teofilândia granodiorite, the Barrocas trondhjemite and the Santa Rosa granite, respectively dated at 2130, 2127 and 2073 Ma. The two first plutons are calc-alkaline rocks following a trondhjemitic trend. They resemble Archean TTGs (tonalites-trondhjemites-granodiorites) by their major and trace element compositions and especially by their fractionated REE patterns, with very low HREE contents. These juvenile magmas resulted from partial melting of a young mafic protolith, likely represented by the nearby Rio Itapicuru greenstone belt. Barrocas trondhjemite and Teofilândia granodiorite derive from similar sources, possibly at different depths and with a different degree of melting. The rocks were deformed at high temperature during the Trans-Amazonian collision and are therefore pre-collisional and ascribed to a subduction stage. The younger Santa Rosa pluton is a small, syn-to post-collisional granite that derived from anatexis of the Archean crust. It is representative of a second, volumetrically minor, plutonic episode of potassic, shoshonitic or alkaline affinities. The large amount of 2.1 Ga granitoids emplaced in Brazil as well as in the West African craton, suggests that, at that time, a global event of possible mantle origin was responsible for the intense magmatic activity that involved both crustal accretion and crustal reworking in many places of the world.

The rheological behaviour of fracture-filling cherts: example of Barite Valley dikes, Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Ledevin, M.; Arndt, N.; Davaille, A.; Ledevin, R.; Simionovici, A.

2015-02-01

In the Barberton Greenstone Belt, South Africa, a 100-250 m thick complex of carbonaceous chert dikes marks the transition from the Mendon Formation to the Mapepe Formation (3260 Ma). The sub-vertical- to vertical position of the fractures, the abundance of highly shattered zones with poorly rotated angular fragments and common jigsaw fit, radial structures, and multiple injection features point to repetitive hydraulic fracturing that released overpressured fluids trapped within the shallow crust. The chemical and isotopic compositions of the chert favour a model whereby seawater-derived fluids circulated at low temperature (< 100-150 °C) within the shallow crust. From the microscopic structure of the chert, the injected material was a slurry of abundant clay-sized, rounded particles of silica, carbonaceous matter and minor clay minerals, all suspended in a siliceous colloidal solution. The dike geometry and characteristics of the slurry concur on that the chert was viscoelastic, and most probably thixotropic at the time of injection: the penetration of black chert into extremely fine fractures is evidence for low viscosity at the time of injection and the suspension of large country rock fragments in the chert matrix provides evidence of high viscosity soon thereafter. We explain the rheology by the particulate and colloidal structure of the slurry, and by the characteristic of silica suspensions to form cohesive 3-D networks through gelation. Our results provide valuable information about the compositions, physical characteristics and rheological properties of the fluids that circulated through Archean volcano-sedimentary sequences, which is an additional step to understand conditions on the floor of Archean oceans, the habitat of early life.

Interfacial recombination at /AlGa/As/GaAs heterojunction structures

NASA Technical Reports Server (NTRS)

Ettenberg, M.; Kressel, H.

1976-01-01

Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Theoretical study of electronic structures and spectroscopic properties of Ga3Sn, GaSn3, and their ions.

PubMed

Zhu, Xiaolei

2007-01-01

Ground and excited states of mixed gallium stannide tetramers (Ga3Sn, Ga3Sn+, Ga3Sn-, GaSn3, GaSn3+, and GaSn3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga3Sn, Ga3Sn+, and Ga3Sn- are found to be the 2A1, 3B1, and 1A1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn3 and GaSn3- is predicted to be the 2A1 and 1A1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn3+ is the 1A1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga3Sn and GaSn3 are computed and discussed. The anion photoelectron spectra of Ga3Sn- and GaSn3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn2 atoms in the 1A1 state of GaSn3+ greatly increases upon electron ionization from the 2A1 state of GaSn3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga3Sn and GaSn3 are compared with those of Ga3Si and GaSi3.

Theoretical study of electronic structures and spectroscopic properties of Ga 3Sn, GaSn 3, and their ions

NASA Astrophysics Data System (ADS)

Zhu, Xiaolei

2007-01-01

Ground and excited states of mixed gallium stannide tetramers (Ga 3Sn, Ga 3Sn +, Ga 3Sn -, GaSn 3, GaSn 3+, and GaSn 3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga 3Sn, Ga 3Sn +, and Ga 3Sn - are found to be the 2A 1, 3B 1, and 1A 1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn 3 and GaSn 3- is predicted to be the 2A 1 and 1A 1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn 3+ is the 1A 1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga 3Sn and GaSn 3 are computed and discussed. The anion photoelectron spectra of Ga 3Sn - and GaSn 3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn 2 atoms in the 1A 1 state of GaSn 3+ greatly increases upon electron ionization from the 2A 1 state of GaSn 3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga 3Sn and GaSn 3 are compared with those of Ga 3Si and GaSi 3.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Kunrugsa, Maetee

2018-06-01

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

Emission wavelength red-shift by using ;semi-bulk; InGaN buffer layer in InGaN/InGaN multiple-quantum-well

NASA Astrophysics Data System (ADS)

Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2017-12-01

We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is fully strained on the n-GaN template, the MQW structure with the buffer has ∼15% relaxation. This small relaxation along with slight compositional pulling induced well thickness increase of MQW is believed to be the reason for the red-shift of emission wavelength. In addition, the SB InGaN buffer acts as an electron reservoir and also helps to reduce the Quantum Confined Stark Effect (QCSE) and thus increase the emission intensity. In this way, by avoiding fully relaxed buffer induced material degradation, a longer emission wavelength can be achieved by just using InGaN SB buffer while keeping all other growth conditions the same as the reference structure. Thus, a reasonably thick fully strained or very little relaxed InGaN buffer, which is realized by ;semi-bulk; approach to maintain good InGaN material quality, can be beneficial for realizing LEDs, grown on top of this buffer, emitting in the blue to cyan to green regime without using excess indium (In).

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1976-01-01

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

NASA Astrophysics Data System (ADS)

Deng, Zhuo; Chen, Baile; Chen, Xiren; Shao, Jun; Gong, Qian; Liu, Huiyun; Wu, Jiang

2018-05-01

In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to ∼7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates.

Ab initio phonon thermal transport in monolayer InSe, GaSe, GaS, and alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandey, Tribhuwan; Parker, David S.; Lindsay, Lucas

We compare vibrational properties and phonon thermal conductivities (κ) of monolayer InSe, GaSe and GaS systems using density functional theory and Peierls-Boltzmann transport methods. In going from InSe to GaSe to GaS, system mass decreases giving both increasing acoustic phonon velocities and decreasing scattering of these heat-carrying modes with optic phonons, ultimately giving κInSe< κGaSe< κGaS. This behavior is demonstrated by correlating the scattering phase space limited by fundamental conservation conditions with mode scattering rates and phonon dispersions for each material. We also show that, unlike flat monolayer systems such as graphene, thermal transport is governed by in-plane vibrations inmore » InSe, GaSe and GaS, similar to buckled monolayer materials such as silicene. Alloying of InSe, GaSe and GaS systems provides an effective method for modulating their κ through intrinsic vibrational modifications and phonon scattering from mass disorder giving reductions ~2-3.5 times. This disorder also suppresses phonon mean free paths in the alloy systems compared to those in their crystalline counterparts. This work provides fundamental insights of lattice thermal transport from basic vibrational properties for an interesting set of two-dimensional materials.« less

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

2017-12-01

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE PAGES

Perl, E. E.; Kuciauskas, D.; Simon, J.; ...

2017-12-21

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, E. E.; Kuciauskas, D.; Simon, J.

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

NASA Astrophysics Data System (ADS)

Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

1992-12-01

Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

NASA Astrophysics Data System (ADS)

Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

2016-09-01

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Das, Saikat; Izyumskaya, Natalia; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

PubMed

Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

2018-01-23

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Kondratenko, S. V.; Iliash, S. A.; Mazur, Yu I.; Kunets, V. P.; Benamara, M.; Salamo, G. J.

2017-09-01

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Z. L., E-mail: zhilaifang@hotmail.com; Li, Q. F.; Shen, X. Y.

2014-01-28

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhancedmore » interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.« less

Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties.

PubMed

Li, Jianye; An, Lei; Lu, Chenguang; Liu, Jie

2006-02-01

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates

NASA Astrophysics Data System (ADS)

Li, Ding; Hoffmann, Veit; Richter, Eberhard; Tessaro, Thomas; Galazka, Zbigniew; Weyers, Markus; Tränkle, Günther

2017-11-01

We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

PubMed

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Scanning tunneling microscopy studies of Si donors (Si[sub Ga]) in GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, J.F.; Liu, X.; Newman, N.

1994-03-07

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si[sub Ga]) in GaAs that reveal delocalized and localized electronic features corresponding to Si[sub Ga] in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface Si[sub Ga]. In contrast, STM images of surface Si[sub Ga] show very localized electronic structures, in good agreement with a recent theoretical prediction [J. Wang [italmore » et] [ital al]., Phys. Rev. B 47, 10 329 (1993)].« less

Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Yang, Zhou; Albrecht, Alexander R.; Sheik-Bahae, Mansoor

2017-02-01

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1982-01-01

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Joongoo; Chang, K. J.; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea and Korea Institute for Advanced Study, Seoul 130-722

2007-10-15

We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V{sub Ga}) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V{sub Ga}, and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V{sub Ga}. The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V{sub Ga} complex, whichmore » consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V{sub Ga} lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length.« less

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Lifetime broadening in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kucharska, A.I.; Robbins, D.J.

1990-03-01

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers show that spectral broadening should be included in any realistic model of laser performance. The authors describe a model of the lifetime broadening due to intraband Auger processes of the Landsberg type and develop it for the case of electron-electron scattering in a 2-D system. They apply the model to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and compare their results with those obtained using both a fixed intraband scattering time and one that varies as {ital n}{sup 1/2},more » where {ital n} is the volume injected carrier density.« less

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrova, Olga; Balakrishnan, Ganesh

2017-02-24

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less