White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

PubMed

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2017-11-01

We report on the growth by solid-source MBE of random-alloy AlxIn1-xAsySb1-y layers lattice-matched to (0 0 1)-GaSb substrates, with xAl ∈ [0.25; 0.75]. The samples quality and morphology were characterized by X-ray diffraction, Nomarski microscopy and atomic force microscopy. Layers grown at 400 °C demonstrated smooth surfaces and no sign of phase decomposition. Samples with xAl ≤ 0.60 demonstrated photoluminescence (PL) at 300 K whereas samples with higher Al content only demonstrated PL at low temperature. Samples grown at 430 °C, in contrast, exhibited PL at low temperature only, whatever their composition. Inferred bandgap energies corroborate the estimation of a non-null quaternary bowing parameter made by Donati, Kaspi and Malloy in Journal of Applied Physics 94 (2003) 5814. Upon annealing, the PL peak energies increased, getting even closer to the theoretical values. These results are in agreement with recently published results on digital AlInAsSb alloys. Our work, which reports the first evidence for PL emission from random-alloy AlInAsSb layers lattice-matched to GaSb, opens the way to their use in optoelectronic devices.

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liaugaudas, Gediminas; Jacopin, Gwénolé; Carlin, Jean-François

2016-05-28

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temperature dependent PL and time-resolved PL measurements reveal similar trends among the studied SQW samples, which also indicate strong localization effects. The observed PL energy behavior, akin to the S-shape, accompanied first by a narrowing and then a broadening of the PL line width with increasing temperature, closely resemble previous observations made on the more established (In,Ga)N/GaN QW system. The similar trends observedmore » in the PL features of those two QW systems imply that the PL properties of LM GaN/(Al,In)N SQW samples are also governed by localized states. The effects of carrier transfer among these localization sites are clearly observed for the 3 nm thick QW, evidenced by an increasing PL intensity in the lower energy spectral window and a concomitant increase in the corresponding PL decay time. Time-resolved data corroborate the picture of strongly localized carriers and also indicate that above a well thickness dependent delocalization temperature carrier distribution across the localized sites reaches thermal equilibrium, as the PL decay times over different spectral regions converge to the same value. Based on the difference between the calculated QW ground state transition energy, obtained using the envelope wave function formalism, and the measured PL energy, a localization energy of at least a few hundreds of meV has been extracted for all of the studied SQW samples. This rather large value also implies that In-related localization effects are more pronounced in the GaN/(Al,In)N system with respect to those in the (In,Ga)N/GaN one for a similar In content.« less

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

NASA Astrophysics Data System (ADS)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Current-matched high-efficiency, multijunction monolithic solar cells

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1993-01-01

The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0

Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells

DOE PAGES

Oshima, Ryuji; France, Ryan M.; Geisz, John F.; ...

2016-10-13

The growth of quaternary Ga 0.68In 0.32As 0.35P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation, we fabricated 1 um-thick lattice-matched GaInAsP films grown on GaAs(001) for application to solar cells. In order to characterize the effect of the surface diffusion of adatoms on the material quality of alloys, the growth temperature and substrate miscut are varied. Transmission electron microscopy and two-dimensional in-situ multi-beam optical stress determine that growth temperatures of 650 degrees C and below enhance the formation of the CuPtB atomic ordering andmore » suppress material decomposition, which is found to occur at the growth surface. The root-mean-square (RMS) roughness is reduced from 33.6 nm for 750 degrees C to 1.62 nm for 650 degrees C, determined by atomic force microscopy. Our initial investigations show that the RMS roughness can be further reduced using increased miscut angle, and substrates miscut toward (111)A, leading to an RMS roughness of 0.56 nm for the sample grown at 600 degrees C on GaAs miscut 6 degrees toward (111)A. Using these conditions, we fabricate an inverted hetero-junction 1.62 eV Ga 0.68In 0.32As 0.35P 0.65 solar cell without an anti-reflection coating with a short-circuit current density, open-circuit voltage, fill factor, and efficiency of 12.23 mA/cm2, 1.12 V, 86.18%, and 11.80%, respectively.« less

Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

NASA Astrophysics Data System (ADS)

Nechaev, D. V.; Semenov, A. N.; Koshelev, O. A.; Jmerik, V. N.; Davydov, V. Yu; Smirnov, A. N.; Pozina, G.; Shubina, T. V.; Ivanov, S. V.

2017-11-01

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (μ-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Microcathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

NASA Astrophysics Data System (ADS)

Takahashi, Tsuyoshi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki

2012-09-01

Backward diodes consisting of a heterojunction of p-GaAs0.51Sb0.49/n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of -17.6 V-1, which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 µm diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes.

Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Kong, Y. C.; Xue, F. S.; Zhou, J. J.; Li, L.; Chen, C.; Li, Y. R.

2009-06-01

The control effect of the ferroelectric polarization on the two-dimensional electron gas (2DEG) in a ferroelectric/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is theoretically analyzed by a self-consistent approach. With incorporating the hysteresis nature of the ferroelectric into calculation, the nature of the control effect is disclosed, where the 2DEG density is depleted/restored after poling/depoling operation on the MFS structure. The orientation of the ferroelectric polarization is clarified to be parallel to that of the AlGaN barrier, which, based on an electrostatics analysis, is attributed to the pinning effect of the underlying polarization. Reducing the thickness of the AlGaN barrier from 25 nm to 20 nm leads to an improved control modulation of the 2DEG density from 36.7% to 54.1%.

Role of matching in case-control studies of antimicrobial resistance.

PubMed

Cerceo, Elizabeth; Lautenbach, Ebbing; Linkin, Darren R; Bilker, Warren B; Lee, Ingi

2009-05-01

Of 57 case-control studies of antimicrobial resistance, matching was used in 23 (40%). Matched variables differed substantially across studies. Of these 23 matched case-control studies, 12 (52%) justified the use of matching, and 9 (39%) noted the strengths or limitations of this approach. Analysis that accounted for matching was performed in only 52% of the case-control studies.

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

PubMed

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates

NASA Technical Reports Server (NTRS)

Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoc, H.

1987-01-01

The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.

Current and lattice matched tandem solar cell

DOEpatents

Olson, Jerry M.

1987-01-01

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

Electrical transport and structural characterization of epitaxial monolayer MoS2 /n- and p-doped GaN vertical lattice-matched heterojunctions

NASA Astrophysics Data System (ADS)

Ruzmetov, D.; O'Regan, T.; Zhang, K.; Herzing, A.; Mazzoni, A.; Chin, M.; Huang, S.; Zhang, Z.; Burke, R.; Neupane, M.; Birdwell, Ag; Shah, P.; Crowne, F.; Kolmakov, A.; Leroy, B.; Robinson, J.; Davydov, A.; Ivanov, T.

We investigate vertical semiconductor junctions consisting of monolayer MoS2 that is epitaxially grown on n- and p-doped GaN crystals. Such a junction represents a building block for 2D/3D vertical semiconductor heterostructures. Epitaxial, lattice-matched growth of MoS2 on GaN is important to ensure high quality interfaces that are crucial for the efficient vertical transport. The MoS2/GaN junctions were characterized with cross-sectional and planar scanning transmission electron microscopy (STEM), scanning tunneling microscopy, and atomic force microscopy. The MoS2/GaN lattice mismatch is measured to be near 1% using STEM. The electrical transport in the out-of-plane direction across the MoS2/GaN junctions was measured using conductive atomic force microscopy and mechanical nano-probes inside a scanning electron microscope. Nano-disc metal contacts to MoS2 were fabricated by e-beam lithography and evaporation. The current-voltage curves of the vertical MoS2/GaN junctions exhibit rectification with opposite polarities for n-doped and p-doped GaN. The metal contact determines the general features of the current-voltage curves, and the MoS2 monolayer modifies the electrical transport across the contact/GaN interface.

Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia

2014-02-17

The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

Resistivity control of unintentionally doped GaN films

NASA Astrophysics Data System (ADS)

Grzegorczyk, A. P.; Macht, L.; Hageman, P. R.; Rudzinski, M.; Larsen, P. K.

2005-05-01

GaN epilayers were grown on sapphire substrates via low temperature GaN and AlN nucleation layers (NL) by metalorganic chemical vapor phase epitaxy (MOCVD). The morphology of the individual NLs strongly depends on the carrier gas used during the growth and recrystallization and this is the key factor for control of the resistivity of the GaN layer grown on it. The GaN nucleation layer grown in presence of N2 has a higher density of islands with a statistically smaller diameter than the samples grown in H2 atmosphere. The NL grown in N2 enables the growth GaN with a sheet resistivity higher than 3×104 cm as opposed to a 0.5 cm value obtained for the NL grown in H2. Introduction of an additional intermediate (IL) low temperature (GaN or AlN) nucleation layer changes the GaN epilayer resistivity to about 50 cm, regardless of the carrier gas used during the growth of the IL. Defect selective etching demonstrated that control of the type and density of the dislocations in GaN enables the growth of highly resistive layers without any intentional acceptor doping (Mg, Zn). It will be demonstrated that by changing the ratio of edge type to screw dislocations the resistivity of the layer can be changed by a few orders of magnitude.

Lightweight concentrator module with 30 percent AM0 efficient GaAs/GaSb tandem cells

NASA Technical Reports Server (NTRS)

Avery, J. E.; Fraas, L. M.; Sundaram, V. S.; Mansoori, N.; Yerkes, J. W.; Brinker, D. J.; Curtis, H. B.; O'Neill, M. J.

1990-01-01

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

Metal-Coated <100>-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

NASA Astrophysics Data System (ADS)

delos Santos, Ramon; Mag-usara, Valynn; Tuico, Anthony; Copa, Vernalyn; Salvador, Arnel; Yamamoto, Kohji; Somintac, Armando; Kurihara, Kazuyoshi; Kitahara, Hideaki; Tani, Masahiko; Estacio, Elmer

2018-04-01

The influence of crystal thickness of metal-coated <100>-cut GaAs (M-G-M) on Cherenkov-phase-matched terahertz (THz) pulse detection was studied. The M-G-M detectors were utilized in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). Polarization-sensitive measurements were carried out to exemplify the efficacy of GaAs in detecting transverse magnetic (TM)- and transverse electric (TE)-polarized THz waves. The reduction of GaAs' thickness increased the THz amplitude spectra of the detected TM-polarized THz electro-optic (EO) signal due to enhanced electric field associated with a more tightly-focused and well-concentrated THz radiation on the thinner M-G-M. The higher-fluence THz beam coupled to the thinner M-G-M improved the integrated intensity of the detected THz amplitude spectrum. This trend was not observed for TE-polarized THz waves, wherein the integrated intensities were almost comparable. Nevertheless, good agreement of spectral line shapes of the superposed TM- and TE-polarized THz-EO signals with that of elliptically polarized THz-EO signal demonstrates excellent polarization-resolved detection capabilities of M-G-M via Cherenkov-phase-matched EO sampling technique.

Metal-Coated <100>-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

NASA Astrophysics Data System (ADS)

delos Santos, Ramon; Mag-usara, Valynn; Tuico, Anthony; Copa, Vernalyn; Salvador, Arnel; Yamamoto, Kohji; Somintac, Armando; Kurihara, Kazuyoshi; Kitahara, Hideaki; Tani, Masahiko; Estacio, Elmer

2018-06-01

The influence of crystal thickness of metal-coated <100>-cut GaAs (M-G-M) on Cherenkov-phase-matched terahertz (THz) pulse detection was studied. The M-G-M detectors were utilized in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). Polarization-sensitive measurements were carried out to exemplify the efficacy of GaAs in detecting transverse magnetic (TM)- and transverse electric (TE)-polarized THz waves. The reduction of GaAs' thickness increased the THz amplitude spectra of the detected TM-polarized THz electro-optic (EO) signal due to enhanced electric field associated with a more tightly-focused and well-concentrated THz radiation on the thinner M-G-M. The higher-fluence THz beam coupled to the thinner M-G-M improved the integrated intensity of the detected THz amplitude spectrum. This trend was not observed for TE-polarized THz waves, wherein the integrated intensities were almost comparable. Nevertheless, good agreement of spectral line shapes of the superposed TM- and TE-polarized THz-EO signals with that of elliptically polarized THz-EO signal demonstrates excellent polarization-resolved detection capabilities of M-G-M via Cherenkov-phase-matched EO sampling technique.

Current- and lattice-matched tandem solar cell

DOEpatents

Olson, J.M.

1985-10-21

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

PubMed

Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

2017-06-14

Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

PubMed

Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

2015-08-25

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

The controlled growth of GaN nanowires.

PubMed

Hersee, Stephen D; Sun, Xinyu; Wang, Xin

2006-08-01

This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mum/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.

Nested case-control studies: should one break the matching?

PubMed

Borgan, Ørnulf; Keogh, Ruth

2015-10-01

In a nested case-control study, controls are selected for each case from the individuals who are at risk at the time at which the case occurs. We say that the controls are matched on study time. To adjust for possible confounding, it is common to match on other variables as well. The standard analysis of nested case-control data is based on a partial likelihood which compares the covariates of each case to those of its matched controls. It has been suggested that one may break the matching of nested case-control data and analyse them as case-cohort data using an inverse probability weighted (IPW) pseudo likelihood. Further, when some covariates are available for all individuals in the cohort, multiple imputation (MI) makes it possible to use all available data in the cohort. In the paper we review the standard method and the IPW and MI approaches, and compare their performance using simulations that cover a range of scenarios, including one and two endpoints.

Unconditional or Conditional Logistic Regression Model for Age-Matched Case-Control Data?

PubMed

Kuo, Chia-Ling; Duan, Yinghui; Grady, James

2018-01-01

Matching on demographic variables is commonly used in case-control studies to adjust for confounding at the design stage. There is a presumption that matched data need to be analyzed by matched methods. Conditional logistic regression has become a standard for matched case-control data to tackle the sparse data problem. The sparse data problem, however, may not be a concern for loose-matching data when the matching between cases and controls is not unique, and one case can be matched to other controls without substantially changing the association. Data matched on a few demographic variables are clearly loose-matching data, and we hypothesize that unconditional logistic regression is a proper method to perform. To address the hypothesis, we compare unconditional and conditional logistic regression models by precision in estimates and hypothesis testing using simulated matched case-control data. Our results support our hypothesis; however, the unconditional model is not as robust as the conditional model to the matching distortion that the matching process not only makes cases and controls similar for matching variables but also for the exposure status. When the study design involves other complex features or the computational burden is high, matching in loose-matching data can be ignored for negligible loss in testing and estimation if the distributions of matching variables are not extremely different between cases and controls.

Unconditional or Conditional Logistic Regression Model for Age-Matched Case–Control Data?

PubMed Central

Kuo, Chia-Ling; Duan, Yinghui; Grady, James

2018-01-01

Matching on demographic variables is commonly used in case–control studies to adjust for confounding at the design stage. There is a presumption that matched data need to be analyzed by matched methods. Conditional logistic regression has become a standard for matched case–control data to tackle the sparse data problem. The sparse data problem, however, may not be a concern for loose-matching data when the matching between cases and controls is not unique, and one case can be matched to other controls without substantially changing the association. Data matched on a few demographic variables are clearly loose-matching data, and we hypothesize that unconditional logistic regression is a proper method to perform. To address the hypothesis, we compare unconditional and conditional logistic regression models by precision in estimates and hypothesis testing using simulated matched case–control data. Our results support our hypothesis; however, the unconditional model is not as robust as the conditional model to the matching distortion that the matching process not only makes cases and controls similar for matching variables but also for the exposure status. When the study design involves other complex features or the computational burden is high, matching in loose-matching data can be ignored for negligible loss in testing and estimation if the distributions of matching variables are not extremely different between cases and controls. PMID:29552553

Spinodal decomposition regions of InxGa1-xSbyAszN1-y-z, InxGa1-xSbyPzN1-y-z and InxGa1-xAsyPzN1-y-z alloys

NASA Astrophysics Data System (ADS)

Elyukhin, Vyacheslav A.

2017-07-01

Considerable interest in highly mismatched semiconductor alloys as materials for device applications has recently been shown. However, the spinodal instability can be a serious obstacle to their use. Here, the spinodal decomposition regions of dilute nitride InxGa1-xSbyAszN1-y-z, InxGa1-xSbyPzN1-y-z and InxGa1-xAsyPzN1-y-z quinary alloys lattice matched to III-V compounds are studied from 0 °C to 1000 °C. The alloys contain six types of chemical bonds corresponding to the constituent compounds, and rearrangement of atoms changes the bonds between them. Therefore, a size and location of the spinodal decomposition regions depend on the enthalpies of constituent compounds, internal strain energy, coherency strain energy and entropy. Among the considered alloys, InxGa1-xSbyAszN1-y-z lattice matched to InAs, InxGa1-xSbyPzN1-y-z lattice matched to GaP and InP and InxGa1-xAsyPzN1-y-z lattice matched to GaAs and InP are most suitable for device applications.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Preparation and Quality Control of 68Ga-Citrate for PET Applications

PubMed Central

Aghanejad, Ayuob; Jalilian, Amir Reza; Ardaneh, Khosro; Bolourinovin, Fatemeh; Yousefnia, Hassan; Samani, Ali Bahrami

2015-01-01

Objective(s): In nuclear medicine studies, gallium-68 (8Ga) citrate has been recently known as a suitable infection agent in positron emission tomography (PET). In this study, by applying an in-house produced 68Ge/68Ga generator, a simple technique for the synthesis and quality control of 68Ga-citrate was introduced; followed by preliminary animal studies. Methods: 68GaCl3 eluted from the generator was studied in terms of quality control factors including radiochemical purity (assessed by HPLC and RTLC), chemical purity (assessed by ICP-EOS), radionuclide purity (evaluated by HPGe), and breakthrough. 68Ga-citrate was prepared from eluted 68GaCl3 and sodium citrate under various reaction conditions. Stability of the complex was evaluated in human serum for 2 h at 370C, followed by biodistribution studies in rats for 120 min. Results: 68Ga-citrate was prepared with acceptable radiochemical purity (>97 ITLC and >98% HPLC), specific activity (4-6 GBq/mM), chemical purity (Sn, Fe<0.3 ppm and Zn<0.2 ppm) within 15 min at 500C. The biodistribution of 68Ga-citrate was consistent with former reports up to 120 minutes. Conclusion: This study demonstrated the possible in-house preparation and quality control of 68Ga-citrate, using a commercially available 68Ge/68Ga generator for PET imaging throughout the country. PMID:27408889

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Vendik, O. G.; Vendik, I. B.; Tural'chuk, P. A.; Parnes, Ya. M.; Parnes, M. D.

2016-11-01

A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.

Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers

NASA Astrophysics Data System (ADS)

Saini, Basant; Adhikari, Sonachand; Pal, Suchandan; Kapoor, Avinsahi

2017-07-01

The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm-3). The simulations are performed for four InxGa1-xN/GaN heterostructures (x = 10%, 15%, 20% and 25%), thus investigating the impact of PML for low as well as high indium containing absorber regions. Use of PML presents a suitable alternative to counter the effects of polarization-induced electric fields arising at low p-GaN doping density especially for absorber regions with high indium (>10%). It is seen that it not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barriers existing at i-InGaN/p-GaN heterojunction. The improvement in photovoltaic properties of the heterostructures even at low p-GaN doping validates this claim.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

NASA Astrophysics Data System (ADS)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; Friedman, Daniel J.; France, Ryan M.; Perl, Emmett E.; Norman, Andrew G.; Guthrey, Harvey L.; Steiner, Myles A.

2018-01-01

Photovoltaic conversion efficiencies of 32.6 ± 1.4% under the AM1.5 G173 global spectrum, and 35.5% ± 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (˜1.86/1.41 eV) solar cells. The challenge of growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ˜1 × 106 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ˜0.39 V.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE PAGES

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; ...

2018-01-29

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

Thermal conduction in lattice–matched superlattices of InGaAs/InAlAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sood, Aditya, E-mail: aditsood@stanford.edu; Department of Mechanical Engineering, Stanford University, Stanford, California 94305; Rowlette, Jeremy A.

2014-08-04

Understanding the relative importance of interface scattering and phonon-phonon interactions on thermal transport in superlattices (SLs) is essential for the simulation of practical devices, such as quantum cascade lasers (QCLs). While several studies have looked at the dependence of the thermal conductivity of SLs on period thickness, few have systematically examined the effect of varying material thickness ratio. Here, we study through-plane thermal conduction in lattice-matched In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As SLs grown by metalorganic chemical vapor deposition as a function of SL period thickness (4.2 to 8.4 nm) and layer thickness ratio (1:3 to 3:1). Conductivities are measured using time-domainmore » thermoreflectance and vary between 1.21 and 2.31 W m{sup −1} K{sup −1}. By studying the trends of the thermal conductivities for large SL periods, we estimate the bulk conductivities of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As to be approximately 5 W m{sup −1} K{sup −1} and 1 W m{sup −1} K{sup −1}, respectively, the latter being an order of magnitude lower than theoretical estimates. Furthermore, we find that the Kapitza resistance between alloy layers has an upper bound of ≈0.1 m{sup 2} K GW{sup −1}, and is negligible compared to the intrinsic alloy resistances, even for 2 nm thick layers. A phonon Boltzmann transport model yields good agreement with the data when the alloy interfaces are modeled using a specular boundary condition, pointing towards the high-quality of interfaces. We discuss the potential impact of these results on the design and operation of high-power QCLs comprised of In{sub 1−x}Ga{sub x}As/In{sub 1−y}Al{sub y}As SL cores.« less

Phase-matching directions, refined Sellmeier equations, and second-order nonlinear coefficient of the infrared Langatate crystal La₃Ga(5.5)Ta(0.5)O₁₄.

PubMed

Boursier, Elodie; Segonds, Patricia; Boulanger, Benoit; Félix, Corinne; Debray, Jérôme; Jegouso, David; Ménaert, Bertrand; Roshchupkin, Dmitry; Shoji, Ichiro

2014-07-01

We directly measured phase-matching directions of second harmonic, sum, and difference frequency generations in the Langatate La₃Ga(5.5)Ta(0.5)O₁₄ (LGT) uniaxial crystal. The simultaneous fit of the data enabled us to refine the Sellmeier equations of the ordinary and extraordinary principal refractive indices over the entire transparency range of the crystal, and to calculate the phase-matching curves and efficiencies of LGT for infrared optical parametric generation.

Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

NASA Astrophysics Data System (ADS)

Ohori, Daisuke; Fukuyama, Atsuhiko; Sakai, Kentaro; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Ikari, Tetsuo

2017-05-01

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from as-etched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillar-based optoelectronic devices such as NP laser diodes.

Strained layer InP/InGaAs quantum well laser

NASA Technical Reports Server (NTRS)

Forouhar, Siamak (Inventor); Larsson, Anders G. (Inventor); Ksendzov, Alexander (Inventor); Lang, Robert J. (Inventor)

1993-01-01

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Role of TNF-α -308G/A gene polymorphism in gastric cancer risk: A case control study and meta-analysis.

PubMed

Du, Li Chuan; Gao, Ru

2017-07-01

In the Chinese population, gastric cancer (GC) is ranked as the third most common type of cancer. Although the exact etiology of GC development is unclear, several factors, including genetic and environmental, have been identified as risk factors. Variations in cytokine genes and their receptors have been related to a higher risk of GC. A single nucleotide polymorphism in the promoter region of tumor necrosis factor-α (TNF-α) (-308G>A) has been associated with a higher risk of GC and in the present study we evaluated its possible association with GC in a Chinese cohort. In addition, we performed a meta-analysis to draw a firm conclusion about the association between TNF-α gene polymorphisms and GC. We enrolled 400 Chinese GC patients and matched healthy controls hailing from similar geographical areas. The TNF-α -308G/A polymorphism was genotyped by allele-specific polymerase chain reaction (AS-PCR). For the meta-analysis, earlier published articles were searched and eligible studies were included. Prevalence of the heterozygous mutant (GA) and minor allele (A) were significantly higher in GC cases compared to healthy controls (GA: p<0.0001, odds ratio (OR)=4.90; A: p<0.0001, OR=2.84). A total of 36 eligible studies including the present report, encompassing of 8353 GC patients and 12099 controls, were analyzed for the meta-analysis. A significant association of the TNF-α polymorphism (-308G>A) with susceptibility to GC was only found in the Caucasian population (A vs G: p=0.001; AA vs GG: p=0.01; AG vs GG: p<0.0001; AA vs AG+GG: p=0.01; AA+AG vs p=0.003). The results of the present case control study and meta-analysis showed that associations between TNF-a variants with susceptibility to GC development is population and ethnic specific.

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Combining matched and unmatched control groups in case-control studies.

PubMed

le Cessie, Saskia; Nagelkerke, Nico; Rosendaal, Frits R; van Stralen, Karlijn J; Pomp, Elisabeth R; van Houwelingen, Hans C

2008-11-15

Multiple control groups in case-control studies are used to control for different sources of confounding. For example, cases can be contrasted with matched controls to adjust for multiple genetic or unknown lifestyle factors and simultaneously contrasted with an unmatched population-based control group. Inclusion of different control groups for a single exposure analysis yields several estimates of the odds ratio, all using only part of the data. Here the authors introduce an easy way to combine odds ratios from several case-control analyses with the same cases. The approach is based upon methods used for meta-analysis but takes into account the fact that the same cases are used and that the estimated odds ratios are therefore correlated. Two ways of estimating this correlation are discussed: sandwich methodology and the bootstrap. Confidence intervals for the pooled estimates and a test for checking whether the odds ratios in the separate case-control studies differ significantly are derived. The performance of the method is studied by simulation and by applying the methods to a large study on risk factors for thrombosis, the MEGA Study (1999-2004), wherein cases with first venous thrombosis were included with a matched control group of partners and an unmatched population-based control group.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

GA-based fuzzy reinforcement learning for control of a magnetic bearing system.

PubMed

Lin, C T; Jou, C P

2000-01-01

This paper proposes a TD (temporal difference) and GA (genetic algorithm)-based reinforcement (TDGAR) learning method and applies it to the control of a real magnetic bearing system. The TDGAR learning scheme is a new hybrid GA, which integrates the TD prediction method and the GA to perform the reinforcement learning task. The TDGAR learning system is composed of two integrated feedforward networks. One neural network acts as a critic network to guide the learning of the other network (the action network) which determines the outputs (actions) of the TDGAR learning system. The action network can be a normal neural network or a neural fuzzy network. Using the TD prediction method, the critic network can predict the external reinforcement signal and provide a more informative internal reinforcement signal to the action network. The action network uses the GA to adapt itself according to the internal reinforcement signal. The key concept of the TDGAR learning scheme is to formulate the internal reinforcement signal as the fitness function for the GA such that the GA can evaluate the candidate solutions (chromosomes) regularly, even during periods without external feedback from the environment. This enables the GA to proceed to new generations regularly without waiting for the arrival of the external reinforcement signal. This can usually accelerate the GA learning since a reinforcement signal may only be available at a time long after a sequence of actions has occurred in the reinforcement learning problem. The proposed TDGAR learning system has been used to control an active magnetic bearing (AMB) system in practice. A systematic design procedure is developed to achieve successful integration of all the subsystems including magnetic suspension, mechanical structure, and controller training. The results show that the TDGAR learning scheme can successfully find a neural controller or a neural fuzzy controller for a self-designed magnetic bearing system.

The Glycated Albumin (GA) to HbA1c Ratio Reflects Shorter-Term Glycemic Control than GA: Analysis of Patients with Fulminant Type 1 Diabetes.

PubMed

Koga, Masafumi; Inada, Shinya; Nakao, Taisei; Kawamori, Ryuzo; Kasayama, Soji

2017-01-01

Glycated albumin (GA) reflects shorter-term glycemic control than HbA1c. We have reported that HbA1c is paradoxically increased in diabetic patients whose glycemic control deteriorated before ameliorating. In this study, we analyzed paradoxical increases of glycemic control indicators after treatment in patients with fulminant type 1 diabetes (FT1D). We also investigated whether the GA/HbA1c ratio may reflect shorter-term glycemic control than GA. Five FT1D patients whose post-treatment HbA1c and GA levels were measured were enrolled. We also used a formula to estimate HbA1c and GA from the fictitious models of changes in plasma glucose in FT1D patients. In this model, the periods during which HbA1c, GA, and the GA/HbA1c ratio were higher than at the first visit were compared. In addition, the half-life for the GA/HbA1c ratio was calculated in accordance with the half-lives for HbA1c and GA (36 and 14 days, respectively). In all FT1D patients, HbA1c levels 2-4 weeks after treatment were increased, with three patients (60%) experiencing an increase of GA levels. In contrast, an increase of the GA/HbA1c ratio was observed in only one patient. In all of the different models of changes in plasma glucose in FT1D patients, the length of time during which the values were higher than at the first visit was in the order of HbA1c > GA > GA/HbA1c ratio. The half-life for the GA/HbA1c ratio was 9 days, shorter than GA. These findings suggest that the GA/HbA1c ratio reflects shorter-term glycemic control than GA. © 2016 Wiley Periodicals, Inc.

Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer

NASA Astrophysics Data System (ADS)

Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon

2016-11-01

We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment.

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications

NASA Astrophysics Data System (ADS)

Braza, V.; Reyes, D. F.; Gonzalo, A.; Utrilla, A. D.; Ben, T.; Ulloa, J. M.; González, D.

2017-05-01

As promising candidates for solar cell and photodetection applications in the range 1.0-1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1-1.15-eV photonic applications.

Comparison of lateral abdominal muscle thickness between weightlifters and matched controls.

PubMed

Sitilertpisan, Patraporn; Pirunsan, Ubon; Puangmali, Aatit; Ratanapinunchai, Jonjin; Kiatwattanacharoen, Suchart; Neamin, Hudsaleark; Laskin, James J

2011-11-01

To compare lateral abdominal muscle thickness between weightlifters and matched controls. A case control study design. University laboratory. 16 female Thai national weightlifters and 16 matched controls participated in this study. Ultrasound imaging with a 12-MHz linear array was used to measure the resting thickness of transversus abdominis (TrA), internal oblique (IO) and total thickness (Total) of lateral abdominal muscle (LAM) on the right side of abdominal wall. The absolute muscle thickness and the relative contribution of each muscle to the total thickness were determined. Weightlifters had significantly thicker absolute TrA and IO muscles than matched controls (p < 0.01). Further, the relative thickness of the IO was significantly greater in weightlifters than matched controls (p < 0.05). The findings of this study suggest that routine Olympic style weight training among female weightlifters appears to result in preferential hypertrophy or adaptation of the IO muscle. Copyright © 2011 Elsevier Ltd. All rights reserved.

InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control

NASA Astrophysics Data System (ADS)

Tosi, Alberto; Ruggeri, Alessandro; Bahgat Shehata, Andrea; Della Frera, Adriano; Scarcella, Carmelo; Tisa, Simone; Giudice, Andrea

2013-01-01

We present a photon-counting module based on InGaAs/InP SPAD (Single-Photon Avalanche Diode) for detecting single photons up to 1.7 μm. The module exploits a novel architecture for generating and calibrating the gate width, along with other functions (such as module supervision, counting and processing of detected photons, etc.). The gate width, i.e. the time interval when the SPAD is ON, is user-programmable in the range from 500 ps to 1.5 μs, by means of two different delay generation methods implemented with an FPGA (Field-Programmable Gate Array). In order to compensate chip-to-chip delay variation, an auto-calibration circuit picks out a combination of delays in order to match at best the selected gate width. The InGaAs/InP module accepts asynchronous and aperiodic signals and introduces very low timing jitter. Moreover the photon counting module provides other new features like a microprocessor for system supervision, a touch-screen for local user interface, and an Ethernet link for smart remote control. Thanks to the fullyprogrammable and configurable architecture, the overall instrument provides high system flexibility and can easily match all requirements set by many different applications requiring single photon-level sensitivity in the near infrared with very low photon timing jitter.

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennig, J., E-mail: jonas.hennig@ovgu.de; Dadgar, A.; Witte, H.

2015-07-15

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices.more » Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.« less

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

NASA Astrophysics Data System (ADS)

Roodenko, K.; Choi, K. K.; Clark, K. P.; Fraser, E. D.; Vargason, K. W.; Kuo, J.-M.; Kao, Y.-C.; Pinsukanjana, P. R.

2016-09-01

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

A high-speed GaAs MESFET optical controller

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

1989-01-01

Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

NASA Astrophysics Data System (ADS)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Wafer-Fused Orientation-Patterned GaAs

DTIC Science & Technology

2008-02-13

frequencies utilizing existing industrial foundries. 15. SUBJECT TERMS Orientation-patterned Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase... Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase-matching, nonlinear frequency conversion 1. INTRODUCTION Quasi-phase-matching (QPM)1...and E. Lallier, “Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

NASA Technical Reports Server (NTRS)

Bharatan, Sudhakar; Iyer, Shanthi; Matney, Kevin; Collis, Ward J.; Nunna Kalyan; Li, Jia; Wu, Liangjin; McGuire, Kristopher; McNeil, Laurie E.

2006-01-01

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Matched samples logistic regression in case-control studies with missing values: when to break the matches.

PubMed

Hansson, Lisbeth; Khamis, Harry J

2008-12-01

Simulated data sets are used to evaluate conditional and unconditional maximum likelihood estimation in an individual case-control design with continuous covariates when there are different rates of excluded cases and different levels of other design parameters. The effectiveness of the estimation procedures is measured by method bias, variance of the estimators, root mean square error (RMSE) for logistic regression and the percentage of explained variation. Conditional estimation leads to higher RMSE than unconditional estimation in the presence of missing observations, especially for 1:1 matching. The RMSE is higher for the smaller stratum size, especially for the 1:1 matching. The percentage of explained variation appears to be insensitive to missing data, but is generally higher for the conditional estimation than for the unconditional estimation. It is particularly good for the 1:2 matching design. For minimizing RMSE, a high matching ratio is recommended; in this case, conditional and unconditional logistic regression models yield comparable levels of effectiveness. For maximizing the percentage of explained variation, the 1:2 matching design with the conditional logistic regression model is recommended.

Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well

NASA Astrophysics Data System (ADS)

Guizani, I.; Bilel, C.; Habchi, M. M.; Rebey, A.

2017-02-01

The optical gain spectra of doped lattice-matched GaNAsBi-based single quantum well (SQW) was theoretically investigated using a (16 × 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain Gmax was 1.2 ×104 cm-1 for (i-n-i) type doped with N2Dd = 2.5 ×1012 cm-2 . We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain Te 1 - h 1 = 1.55 μ m . The effect of well width on optical gain spectra was also discussed.

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

NASA Technical Reports Server (NTRS)

Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

1989-01-01

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

A concordance index for matched case-control studies with applications in cancer risk.

PubMed

Brentnall, Adam R; Cuzick, Jack; Field, John; Duffy, Stephen W

2015-02-10

In unmatched case-control studies, the area under the receiver operating characteristic (ROC) curve (AUC) may be used to measure how well a variable discriminates between cases and controls. The AUC is sometimes used in matched case-control studies by ignoring matching, but it lacks interpretation because it is not based on an estimate of the ROC for the population of interest. We introduce an alternative measure of discrimination that is the concordance of risk factors conditional on the matching factors. Parametric and non-parametric estimators are given for different matching scenarios, and applied to real data from breast and lung cancer case-control studies. Diagnostic plots to verify the constancy of discrimination over matching factors are demonstrated. The proposed simple measure is easy to use, interpret, more efficient than unmatched AUC statistics and may be applied to compare the conditional discrimination performance of risk factors. Copyright © 2014 John Wiley & Sons, Ltd.

Role of GA3, GA4 and uniconazole-P in controlling gravitropism and tension wood formation in Fraxinus mandshurica Rupr. var. japonica Maxim. seedlings.

PubMed

Jiang, Sha; Xu, Ke; Wang, Yong-Zhou; Ren, Yan-Ping; Gu, Song

2008-01-01

GA(3) and GA(4) (gibberellins) play an important role in controlling gravitropism and tension wood formation in woody angiosperms. In order to improve our understanding of the role of GA(3) and GA(4) on xylem cell formation and the G-layer, we studied the effect of GA(3) and GA(4) and uniconazole-P, which is an inhibitor of GA biosynthesis, on tension wood formation by gravity in Fraxinus mandshurica Rupr. var. japonica Maxim. seedlings. Forty seedlings were divided into two groups; one group was placed upright and the other tilted. Each group was further divided into four sub-groups subjected to the following treatments: 3.43 x 10(-9) micromol acetone as control, 5.78 x 10(-8) micromol gibberellic acid (GA(3)), 6.21 x 10(-8) micromol GA(4), and 6.86 x 10(-8) micromol uniconazole-P. During the experimental period, GAs-treated seedlings exhibited negative gravitropism, whereas application of uniconazole-P inhibited negative gravitropic stem bending. GA(3) and GA(4) promoted wood fibers that possessed a gelatinous layer on the upper side, whereas uniconazole-P inhibited wood formation but did not inhibit the differentiation of the gelatinous layer in wood fibers on the upper side. These results suggest that: (i) both the formation of gelatinous fibers and the quantity of xylem production are important for the negative gravitropism in horizontally-positioned seedlings; (ii) GA(3) and GA(4) affect wood production more than differentiation of the gelatinous layer in wood fibers; G-layer development may be regulated by other hormones via the indirect-role of GA(3) and GA(4) in horizontally-positioned F. mandshurica seedlings rather than the direct effect of GAs; and (iii) the mechanism for upward wood stem bending is different to the newly developed shoot bending in reaction to gravity in this species.

Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

NASA Astrophysics Data System (ADS)

Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, Junichi

2017-12-01

Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a μm-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio.

GaAs circuits for monolithic optical controller

NASA Technical Reports Server (NTRS)

Gustafson, G.; Bendett, M.; Carney, J.; Mactaggart, R.; Palmquist, S.

1988-01-01

GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedance amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Surface Interaction Kinetics of GaAs (100) Surfaces Under Electron Cyclotron Resonance Nitrogen Plasma Exposure

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Hauenstein, R. J.; Bandić, Z. Z.; Feenstra, R. M.; Hwang, S. J.; McGill, T. C.

1996-03-01

GaN is a robust semiconducting material offering a large, direct bandgap appropriate for use in blue-green to UV light emitting diodes and laser diodes. Attainment of device quality GaN has been difficult due to the lack of substrate materials that are suitably matched to the unusually small lattice parameter of GaN. To better control heteroepitaxial growth quality, a fundamental study of the initial stages of GaN growth by Electron Cyclotron Resonance Nitrogen Plasma-Assisted Molecular Beam Epitaxy (ECR-MBE) has been performed. The effect of an ECR Nitrogen plasma on a GaAs (100) surface is examined through time resolved reflection high energy electron diffraction, high resolution x-ray diffraction, and cross-sectional scanning tunneling microscopy. Fully commensurate GaN_yAs_1-y/GaAs heterostructures involving ultrathin GaN_yAs_1-y layers are obtained, and thermally activated microscopic growth processes are identified and quantitatively characterized through the aid of a specially developed kinetic model. The implications for ECR-MBE growth of GaN/GaAs mutilayers is discussed.

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

PubMed

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

NASA Astrophysics Data System (ADS)

Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo

2018-05-01

An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.

Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

NASA Astrophysics Data System (ADS)

Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

2017-03-01

The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

PubMed

Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

2017-04-20

Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Examination of blood-brain barrier permeability in dementia of the Alzheimer type with (68Ga)EDTA and positron emission tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlageter, N.L.; Carson, R.E.; Rapoport, S.I.

1987-02-01

Positron emission tomography with (/sup 68/Ga)ethylenediaminetetraacetic acid ((/sup 68/Ga)EDTA) was used to examine the integrity of the blood-brain barrier (BBB) in five patients with dementia of the Alzheimer type and in five healthy age-matched controls. Within a scanning time of 90 min, there was no evidence that measurable intravascular tracer entered the brain in either the dementia or the control group. An upper limit for the cerebrovascular permeability-surface area product of (68Ga)EDTA was estimated as 2 X 10(-6) s-1 in both groups. The results provide no evidence for breakdown of the BBB in patients with dementia of the Alzheimer type.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

NASA Technical Reports Server (NTRS)

Partin, D. L.; Chen, J. W.; Milnes, A. G.; Vassamillet, L. F.

1979-01-01

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

NASA Astrophysics Data System (ADS)

Efthymiou, L.; Longobardi, G.; Camuso, G.; Chien, T.; Chen, M.; Udrea, F.

2017-03-01

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

Uncontrolled Hemorrhage Differs From Volume- or Pressure-Matched Controlled Hemorrhage in Swine

DTIC Science & Technology

2007-10-01

differences between these models, we evaluated the relationship between blood volume loss and blood pressure in controlled versus uncontrolled hemorrhage...aortotomy; (2) group P, controlled hemorrhage matched to the blood pressure profile of group U; or (3) group V, controlled hemorrhage matched to the...hemorrhage and received no fluid resuscitation. Group U resulted in a blood loss of 17.6 T 0.7 mL kgj1 and a reduction in blood pressure to 28 T 3 mmHg at

Impact of a soccer match on the cardiac autonomic control of referees.

PubMed

Boullosa, Daniel Alexandre; Abreu, Laurinda; Tuimil, José Luis; Leicht, Anthony Scott

2012-06-01

The purpose of this study was to assess the effect of a soccer match on the cardiac autonomic control of heart rate (HR) in soccer referees. Sixteen Spanish regional and third division referees (11 males: 26 ± 7 years, 74.4 ± 4.1 kg, 178 ± 3 cm, Yo-Yo IR1 ~600-1,560 m; 5 females: 22 ± 3 years, 59.3 ± 4.8 kg, 158 ± 8 cm, Yo-Yo IR1 ~200-520 m) participated with 24-h HR recordings measured with a Polar RS800 during a rest and a match day. Autonomic control of HR was assessed from HR variability (HRV) analysis. Inclusion of a soccer match (92.5% spent at >75% maximum HR) reduced pre-match (12:00-17:00 hours; small to moderate), post-match (19:00-00:00 hours; moderate to almost perfect), and night-time (00:00-05:00 hours; small to moderate) HRV. Various moderate-to-large correlations were detected between resting HRV and the rest-to-match day difference in HRV. The rest-to-match day differences of low and high-frequency bands ratio (LF/HF) and HR in the post-match period were moderately correlated with time spent at different exercise intensities. Yo-Yo IR1 performance was highly correlated with jump capacity and peak lactate, but not with any HRV parameter. These results suggest that a greater resting HRV may allow referees to tolerate stresses during a match day with referees who spent more time at higher intensities during matches exhibiting a greater LF/HF increment in the post-match period. The relationship between match activities, [Formula: see text] and HR recovery kinetics in referees and team sport athletes of different competitive levels remains to be clarified.

Controlled growth of well-aligned GaS nanohornlike structures and their field emission properties.

PubMed

Sinha, Godhuli; Panda, Subhendu K; Datta, Anuja; Chavan, Padmakar G; Shinde, Deodatta R; More, Mahendra A; Joag, D S; Patra, Amitava

2011-06-01

Here, we report the synthesis of vertically aligned gallium sulfide (GaS) nanohorn arrays using simple vapor-liquid-solid (VLS) method. The morphologies of GaS nano and microstructures are tuned by controlling the temperature and position of the substrate with respect to the source material. A plausible mechanism for the controlled growth has been proposed. It is important to note that the turn-on field value of GaS nanohorns array is found to be the low turn-on field 4.2 V/μm having current density of 0.1 μA/cm(2). The striking feature of the field emission behavior of the GaS nanohorn arrays is that the average emission current remains nearly constant over long time without any degradation. © 2011 American Chemical Society

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

NASA Astrophysics Data System (ADS)

Bergbauer, W.; Strassburg, M.; Kölper, Ch; Linder, N.; Roder, C.; Lähnemann, J.; Trampert, A.; Fündling, S.; Li, S. F.; Wehmann, H.-H.; Waag, A.

2010-07-01

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 µm h - 1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.

PubMed

Bergbauer, W; Strassburg, M; Kölper, Ch; Linder, N; Roder, C; Lähnemann, J; Trampert, A; Fündling, S; Li, S F; Wehmann, H-H; Waag, A

2010-07-30

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO(2) masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 microm h(-1) were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.;

Robust Sliding Mode Control Based on GA Optimization and CMAC Compensation for Lower Limb Exoskeleton

PubMed Central

Long, Yi; Du, Zhi-jiang; Wang, Wei-dong; Dong, Wei

2016-01-01

A lower limb assistive exoskeleton is designed to help operators walk or carry payloads. The exoskeleton is required to shadow human motion intent accurately and compliantly to prevent incoordination. If the user's intention is estimated accurately, a precise position control strategy will improve collaboration between the user and the exoskeleton. In this paper, a hybrid position control scheme, combining sliding mode control (SMC) with a cerebellar model articulation controller (CMAC) neural network, is proposed to control the exoskeleton to react appropriately to human motion intent. A genetic algorithm (GA) is utilized to determine the optimal sliding surface and the sliding control law to improve performance of SMC. The proposed control strategy (SMC_GA_CMAC) is compared with three other types of approaches, that is, conventional SMC without optimization, optimal SMC with GA (SMC_GA), and SMC with CMAC compensation (SMC_CMAC), all of which are employed to track the desired joint angular position which is deduced from Clinical Gait Analysis (CGA) data. Position tracking performance is investigated with cosimulation using ADAMS and MATLAB/SIMULINK in two cases, of which the first case is without disturbances while the second case is with a bounded disturbance. The cosimulation results show the effectiveness of the proposed control strategy which can be employed in similar exoskeleton systems. PMID:27069353

Robust Sliding Mode Control Based on GA Optimization and CMAC Compensation for Lower Limb Exoskeleton.

PubMed

Long, Yi; Du, Zhi-Jiang; Wang, Wei-Dong; Dong, Wei

2016-01-01

A lower limb assistive exoskeleton is designed to help operators walk or carry payloads. The exoskeleton is required to shadow human motion intent accurately and compliantly to prevent incoordination. If the user's intention is estimated accurately, a precise position control strategy will improve collaboration between the user and the exoskeleton. In this paper, a hybrid position control scheme, combining sliding mode control (SMC) with a cerebellar model articulation controller (CMAC) neural network, is proposed to control the exoskeleton to react appropriately to human motion intent. A genetic algorithm (GA) is utilized to determine the optimal sliding surface and the sliding control law to improve performance of SMC. The proposed control strategy (SMC_GA_CMAC) is compared with three other types of approaches, that is, conventional SMC without optimization, optimal SMC with GA (SMC_GA), and SMC with CMAC compensation (SMC_CMAC), all of which are employed to track the desired joint angular position which is deduced from Clinical Gait Analysis (CGA) data. Position tracking performance is investigated with cosimulation using ADAMS and MATLAB/SIMULINK in two cases, of which the first case is without disturbances while the second case is with a bounded disturbance. The cosimulation results show the effectiveness of the proposed control strategy which can be employed in similar exoskeleton systems.

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

NASA Astrophysics Data System (ADS)

Green, D. S.; Gibb, S. R.; Hosse, B.; Vetury, R.; Grider, D. E.; Smart, J. A.

2004-12-01

High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible for leakage currents, trapping effects, and may adversely affect device reliability. We have studied the impact of AlN nucleation conditions on the density and character of threading dislocations on SiC substrates. Variation of the nucleation temperature, V/III ratio, and thickness are seen to have a dramatic effect on the balance between edge, screw and mixed character dislocation densities. Electrical and structural properties have been assessed by AFM and XRD on a material level and through DC and RF performance at the device level. The ratio between dislocation characteristics has been established primarily through comparison of symmetric and asymmetric XRD rocking curve widths. The effect of each dislocation type on leakage current, RF power and reliability at 2 GHz, the targeted band for cell phone infrastructure applications, is discussed.

Control of force during rapid visuomotor force-matching tasks can be described by discrete time PID control algorithms.

PubMed

Dideriksen, Jakob Lund; Feeney, Daniel F; Almuklass, Awad M; Enoka, Roger M

2017-08-01

Force trajectories during isometric force-matching tasks involving isometric contractions vary substantially across individuals. In this study, we investigated if this variability can be explained by discrete time proportional, integral, derivative (PID) control algorithms with varying model parameters. To this end, we analyzed the pinch force trajectories of 24 subjects performing two rapid force-matching tasks with visual feedback. Both tasks involved isometric contractions to a target force of 10% maximal voluntary contraction. One task involved a single action (pinch) and the other required a double action (concurrent pinch and wrist extension). 50,000 force trajectories were simulated with a computational neuromuscular model whose input was determined by a PID controller with different PID gains and frequencies at which the controller adjusted muscle commands. The goal was to find the best match between each experimental force trajectory and all simulated trajectories. It was possible to identify one realization of the PID controller that matched the experimental force produced during each task for most subjects (average index of similarity: 0.87 ± 0.12; 1 = perfect similarity). The similarities for both tasks were significantly greater than that would be expected by chance (single action: p = 0.01; double action: p = 0.04). Furthermore, the identified control frequencies in the simulated PID controller with the greatest similarities decreased as task difficulty increased (single action: 4.0 ± 1.8 Hz; double action: 3.1 ± 1.3 Hz). Overall, the results indicate that discrete time PID controllers are realistic models for the neural control of force in rapid force-matching tasks involving isometric contractions.

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

NASA Astrophysics Data System (ADS)

Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-06-01

We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

Morphological Features in Children with Autism Spectrum Disorders: A Matched Case-Control Study

ERIC Educational Resources Information Center

Ozgen, Heval; Hellemann, Gerhard S.; Stellato, Rebecca K.; Lahuis, Bertine; van Daalen, Emma; Staal, Wouter G.; Rozendal, Marije; Hennekam, Raoul C.; Beemer, Frits A.; van Engeland, Herman

2011-01-01

This study was designed to examine morphological features in a large group of children with autism spectrum disorder versus normal controls. Amongst 421 patients and 1,007 controls, 224 matched pairs were created. Prevalence rates and odds ratios were analyzed by conditional regression analysis, McNemar test or paired t-test matched pairs.…

Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well

NASA Astrophysics Data System (ADS)

Wang, Y. C.; Tyan, S. L.; Juang, Y. D.

2002-07-01

A lattice-matched In0.53Ga0.47As/In0.52Al0.48As single quantum well (SQW) structure grown by gas source molecular beam epitaxy has been investigated by photoreflectance (PR) and photoluminescence (PL). The PR measurements allowed the observation of interband transitions from the heavy- and light-hole valence subbands to the conduction subbands. The transition energies measured from the PR spectra agree with those calculated theoretically. Two features corresponding to the ground state transition coming from the SQW and the band gap transition generated from the buffer layer are observed in the PL spectra and are in good agreement with the PR data. The effect of the temperature on the transition energies is essentially same as that in the gap transition of the bulk structure. The values of the Varshni coefficients of InGaAs/InAlAs were obtained from the relation between the exciton transition energy and the temperature. The built-in electric field could be determined and located from a series of PR spectra by sequential etching processes. The phase spectra obtained from the PR spectra by the Kramers-Kronig transformation were analyzed in terms of the two-ray model, and calculated the etching depth in each etching, and thus leading to the etching rate. The etching rate obtained from phase shift analysis agrees with that measured by atomic force microscopy. The etching results suggest that a built-in electric field exists at the buffer/substrate interface and it also enables us to determine the etching rate.

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Phase-matching properties of BaGa₄Se₇ for SHG and SFG in the 0.901-10.5910  μm range.

PubMed

Kato, Kiyoshi; Miyata, Kentaro; Petrov, Valentin

2017-04-10

We report new experimental results on the phase-matching properties of a BaGa₄Se₇ crystal for harmonic generation of a Nd:YAG laser-pumped AgGaS₂ optical parametric oscillator (OPO) and a CO₂ laser in the 0.901-10.5910 μm range. In addition, we present new Sellmeier equations that provide a good reproduction of the present experimental results as well as the published data points for a Nd:YAG laser-pumped OPO and an optical parametric amplifier (OPA) in the 3.10-15.22 μm range and a Ho:YAG laser-pumped OPA in the 3.49-5.18 μm range.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Development of a GA-Fuzzy-Immune PID Controller with Incomplete Derivation for Robot Dexterous Hand

PubMed Central

Liu, Xin-hua; Chen, Xiao-hu; Zheng, Xian-hua; Li, Sheng-peng; Wang, Zhong-bin

2014-01-01

In order to improve the performance of robot dexterous hand, a controller based on GA-fuzzy-immune PID was designed. The control system of a robot dexterous hand and mathematical model of an index finger were presented. Moreover, immune mechanism was applied to the controller design and an improved approach through integration of GA and fuzzy inference was proposed to realize parameters' optimization. Finally, a simulation example was provided and the designed controller was proved ideal. PMID:25097881

Consensus of satellite cluster flight using an energy-matching optimal control method

NASA Astrophysics Data System (ADS)

Luo, Jianjun; Zhou, Liang; Zhang, Bo

2017-11-01

This paper presents an optimal control method for consensus of satellite cluster flight under a kind of energy matching condition. Firstly, the relation between energy matching and satellite periodically bounded relative motion is analyzed, and the satellite energy matching principle is applied to configure the initial conditions. Then, period-delayed errors are adopted as state variables to establish the period-delayed errors dynamics models of a single satellite and the cluster. Next a novel satellite cluster feedback control protocol with coupling gain is designed, so that the satellite cluster periodically bounded relative motion consensus problem (period-delayed errors state consensus problem) is transformed to the stability of a set of matrices with the same low dimension. Based on the consensus region theory in the research of multi-agent system consensus issues, the coupling gain can be obtained to satisfy the requirement of consensus region and decouple the satellite cluster information topology and the feedback control gain matrix, which can be determined by Linear quadratic regulator (LQR) optimal method. This method can realize the consensus of satellite cluster period-delayed errors, leading to the consistency of semi-major axes (SMA) and the energy-matching of satellite cluster. Then satellites can emerge the global coordinative cluster behavior. Finally the feasibility and effectiveness of the present energy-matching optimal consensus for satellite cluster flight is verified through numerical simulations.

Performance of Disease Risk Score Matching in Nested Case-Control Studies: A Simulation Study.

PubMed

Desai, Rishi J; Glynn, Robert J; Wang, Shirley; Gagne, Joshua J

2016-05-15

In a case-control study, matching on a disease risk score (DRS), which includes many confounders, should theoretically result in greater precision than matching on only a few confounders; however, this has not been investigated. We simulated 1,000 hypothetical cohorts with a binary exposure, a time-to-event outcome, and 13 covariates. Each cohort comprised 2 subcohorts of 10,000 patients each: a historical subcohort and a concurrent subcohort. DRS were estimated in the historical subcohorts and applied to the concurrent subcohorts. Nested case-control studies were conducted in the concurrent subcohorts using incidence density sampling with 2 strategies-matching on age and sex, with adjustment for additional confounders, and matching on DRS-followed by conditional logistic regression for 9 outcome-exposure incidence scenarios. In all scenarios, DRS matching yielded lower average standard errors and mean squared errors than did matching on age and sex. In 6 scenarios, DRS matching also resulted in greater empirical power. DRS matching resulted in less relative bias than did matching on age and sex at lower outcome incidences but more relative bias at higher incidences. Post-hoc analysis revealed that the effect of DRS model misspecification might be more pronounced at higher outcome incidences, resulting in higher relative bias. These results suggest that DRS matching might increase the statistical efficiency of case-control studies, particularly when the outcome is rare. © The Author 2016. Published by Oxford University Press on behalf of the Johns Hopkins Bloomberg School of Public Health. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

A new expression of Ns versus Ef to an accurate control charge model for AlGaAs/GaAs

NASA Astrophysics Data System (ADS)

Bouneb, I.; Kerrour, F.

2016-03-01

Semi-conductor components become the privileged support of information and communication, particularly appreciation to the development of the internet. Today, MOS transistors on silicon dominate largely the semi-conductors market, however the diminution of transistors grid length is not enough to enhance the performances and respect Moore law. Particularly, for broadband telecommunications systems, where faster components are required. For this reason, alternative structures proposed like hetero structures IV-IV or III-V [1] have been.The most effective components in this area (High Electron Mobility Transistor: HEMT) on IIIV substrate. This work investigates an approach for contributing to the development of a numerical model based on physical and numerical modelling of the potential at heterostructure in AlGaAs/GaAs interface. We have developed calculation using projective methods allowed the Hamiltonian integration using Green functions in Schrodinger equation, for a rigorous resolution “self coherent” with Poisson equation. A simple analytical approach for charge-control in quantum well region of an AlGaAs/GaAs HEMT structure was presented. A charge-control equation, accounting for a variable average distance of the 2-DEG from the interface was introduced. Our approach which have aim to obtain ns-Vg characteristics is mainly based on: A new linear expression of Fermi-level variation with two-dimensional electron gas density in high electron mobility and also is mainly based on the notion of effective doping and a new expression of AEc

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

NASA Astrophysics Data System (ADS)

Matys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.

2017-06-01

The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge ( Qp o l -). In order to clarify the origin of Qf, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/AlxGa1-xN/GaN and SiN/AlxGa1-xN/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth, we showed that the Vth shift in the examined MIS structures is due to a significant decrease in the positive Qf with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf at insulator/III-N interfaces.

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

NASA Astrophysics Data System (ADS)

El-Masry, N. A.; Zavada, J. M.; Reynolds, J. G.; Reynolds, C. L.; Liu, Z.; Bedair, S. M.

2017-08-01

We have demonstrated a room temperature dilute magnetic semiconductor based on GaCrN epitaxial layers grown by metalorganic chemical vapor deposition. Saturation magnetization Ms increased when the GaCrN film is incorporated into a (p-GaN/i-GaCrN/n-GaN) device structure, due to the proximity of mediated holes present in the p-GaN layer. Zero field cooling and field cooling were measured to ascertain the absence of superparamagnetic behavior in the films. A (p-GaN/i-GaCrN/n-GaN) device structure with room temperature ferromagnetic (FM) properties that can be controlled by an external applied voltage has been fabricated. In this work, we show that the applied voltage controls the ferromagnetic properties, by biasing the (p-i-n) structure. With forward bias, ferromagnetism in the GaCrN layer was increased nearly 4 fold of the original value. Such an enhancement is due to carrier injection of holes into the Cr deep level present in the i-GaCrN layer. A "memory effect" for the FM behavior of the (p-i-n) GaCrN device structure persisted for 42 h after the voltage bias was turned off. These measurements also support that the observed ferromagnetism in the GaCrN film is not due to superparamagnetic clusters but instead is a hole-mediated phenomenon.

Determinants of unwanted pregnancies in India using matched case-control designs.

PubMed

Dixit, Priyanka; Ram, Faujdar; Dwivedi, Laxmi Kant

2012-08-11

In India, while the total fertility rate has been declined from 3.39 in 1992-93 to 2.68 in 2005-06, the prevalence of unintended pregnancy is still stagnant over the same period. A review of existing literature shows that within the country, there are variations in fertility preferences between different regions. Also there is a strong argument that the availability of a health facility at the village level plays an important role in reshaping the fertility behavior of women. Keeping in mind the fact that there is no information at the village level (which is the lowest geographical boundary) in the recent round of National Family Health Survey (NFHS-3), the specific objective of this study is to examine the impact of individual and household level variables on unwanted pregnancies without controlling the village level variation. Further, once the village level variation (i.e. unobserved variation) has been controlled, it is necessary to study whether there has been any alteration in the contribution of factors from earlier results of without adjusting the village level variation. This paper attempts to examine the associated factors of unwanted pregnancies, without matching the village and after matching the village, by using the matched case-control design. Nationwide data from India's latest NFHS-3 conducted during 2005-06 was used for the present study. Frequency and pair wise matching has been applied in the present paper and conditional logistic regression analysis was used to work out the models and to find out the factors associated with unwanted pregnancies. A major finding of this study was that 1:3 case-control study (without matching the village) shows that women belonging to non Hindu/Muslim religion, Scheduled Tribe, women who have experienced child loss and if the previous birth interval is 24 through 36 months were significant predictors of unwanted pregnancy. However, this relationship did not hold significant after village wise matching. Other

AlInAsSb for GaSb-based multi-junction solar cells

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2018-02-01

Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of a multi-junction subcell while conserving a single lattice parameter. Among the possible candidates, AlInAsSb could in theory reach the widest range of bandgap energies while being lattice-matched to InP or GaSb. Although these material systems are still emerging photovoltaic segments, they do offer advantages for multi-junction design. GaSbbased structures in particular can make use of highly efficient GaSb/InAs tunnel junctions to connect the subcells. There has been only little information concerning GaSb-lattice matched AlInAsSb in the literature. The alloy's miscibility gap can be circumvented by the use of non-equilibrium techniques. Nevertheless, appropriate growth conditions remain to be found in order to produce a stable alloy. Furthermore, the abnormally low bandgap energies reported for the material need to be confirmed and interpreted with a multi-junction perspective. In this work, we propose a tandem structure made of an AlInAsSb top cell and a GaSb bottom cell. An epitaxy study of the AlInAsSb alloy lattice-matched to GaSb was first performed. The subcells were then grown and processed. The GaSb subcell yielded an efficiency of 5.9% under 1 sun and the tandem cell is under optimization. Preliminary results are presented in this document.

Evaluation of glycated albumin (GA) and GA/HbA1c ratio for diagnosis of diabetes and glycemic control: A comprehensive review.

PubMed

Yazdanpanah, Sara; Rabiee, Mohammad; Tahriri, Mohammadreza; Abdolrahim, Mojgan; Rajab, Asadollah; Jazayeri, Hossein E; Tayebi, Lobat

2017-06-01

Diabetes Mellitus (DM) is a group of metabolic diseases characterized by chronic high blood glucose concentrations (hyperglycemia). When it is left untreated or improperly managed, it can lead to acute complications including diabetic ketoacidosis and non-ketotic hyperosmolar coma. In addition, possible long-term complications include impotence, nerve damage, stroke, chronic kidney failure, cardiovascular disease, foot ulcers, and retinopathy. Historically, universal methods to measure glycemic control for the diagnosis of diabetes included fasting plasma glucose level (FPG), 2-h plasma glucose (2HP), and random plasma glucose. However, these measurements did not provide information about glycemic control over a long period of time. To address this problem, there has been a switch in the past decade to diagnosing diabetes and its severity through measurement of blood glycated proteins such as Hemoglobin A1c (HbA1c) and glycated albumin (GA). Diagnosis and evaluation of diabetes using glycated proteins has many advantages including high accuracy of glycemic control over a period of time. Currently, common laboratory methods used to measure glycated proteins are high-performance liquid chromatography (HPLC), immunoassay, and electrophoresis. HbA1c is one of the most important diagnostic factors for diabetes. However, some reports indicate that HbA1c is not a suitable marker to determine glycemic control in all diabetic patients. GA, which is not influenced by changes in the lifespan of erythrocytes, is thought to be a good alternative indicator of glycemic control in diabetic patients. Here, we review the literature that has investigated the suitability of HbA1c, GA and GA:HbA1c as indicators of long-term glycemic control and demonstrate the importance of selecting the appropriate glycated protein based on the patient's health status in order to provide useful and modern point-of-care monitoring and treatment.

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

DTIC Science & Technology

2008-11-01

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO- Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 ...nanobrushes (NBs) with Ga2O3 as the core and ZnO as the branches self-assembling symmetrically in six equiangular directions around the core

Matching with Multiple Control Groups with Adjustment for Group Differences

ERIC Educational Resources Information Center

Stuart, Elizabeth A.; Rubin, Donald B.

2008-01-01

When estimating causal effects from observational data, it is desirable to approximate a randomized experiment as closely as possible. This goal can often be achieved by choosing a subsample from the original control group that matches the treatment group on the distribution of the observed covariates. However, sometimes the original control group…

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells.

PubMed

Steichen, Marc; Thomassey, Matthieu; Siebentritt, Susanne; Dale, Phillip J

2011-03-14

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.

Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Xu, Jian; Váró, György

2004-10-01

A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.

Matching Theory - A Sampler: From Denes Koenig to the Present

DTIC Science & Technology

1991-01-01

1079. [1131 , Matching Theory, Ann. Discrete Math . 29, North- Holland, Amsterdam, 1986. [114 ] M. Luby, A simple parallel algorithm for the maximal...311. [135 ]M.D. Plummer, On n-extendable graphs, Discrete Math . 31, 1980, 201-210. [1361 , Matching extension and the genus of a graph, J. Combin...Theory Ser. B, 44, 1988, 329-837. [137] , A theorem on matchings in the plane, Graph Theory in Memory of G.A. Dirac, Ann. Discrete Math . 41, North

Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires.

PubMed

Alonso-Orts, Manuel; Sánchez, Ana M; Hindmarsh, Steven A; López, Iñaki; Nogales, Emilio; Piqueras, Javier; Méndez, Bianchi

2017-01-11

Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO 2 /Ga 2 O 3 complex nanostructures. Ga 2 O 3 nanowires decorated with either crossing SnO 2 nanowires or SnO 2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga 2 O 3 nanowires. Ga 2 O 3 nanowires grown along the [001] direction favor the formation of crossing SnO 2 nanowires. Alternatively, SnO 2 forms rhombohedral particles on [110] Ga 2 O 3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga 2 O 3 acted as substrates, [110] Ga 2 O 3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga 2 O 3 axis and SnO 2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga 2 O 3 nanowires, growing along the [001], with crossing SnO 2 wires. The SnO 2 /Ga 2 O 3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO 2 on its particular shape. Orange emission dominates in SnO 2 /Ga 2 O 3 crossing wires while green-blue emission is observed in SnO 2 particles attached to Ga 2

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Cui, Peng; Zhao, Jingtao; Fu, Chen; Yang, Ming; Lv, Yuanjie

2017-08-01

Using a suitable dual-gate structure, the source-to-drain resistance (RSD) of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF) scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

Network-based regularization for matched case-control analysis of high-dimensional DNA methylation data.

PubMed

Sun, Hokeun; Wang, Shuang

2013-05-30

The matched case-control designs are commonly used to control for potential confounding factors in genetic epidemiology studies especially epigenetic studies with DNA methylation. Compared with unmatched case-control studies with high-dimensional genomic or epigenetic data, there have been few variable selection methods for matched sets. In an earlier paper, we proposed the penalized logistic regression model for the analysis of unmatched DNA methylation data using a network-based penalty. However, for popularly applied matched designs in epigenetic studies that compare DNA methylation between tumor and adjacent non-tumor tissues or between pre-treatment and post-treatment conditions, applying ordinary logistic regression ignoring matching is known to bring serious bias in estimation. In this paper, we developed a penalized conditional logistic model using the network-based penalty that encourages a grouping effect of (1) linked Cytosine-phosphate-Guanine (CpG) sites within a gene or (2) linked genes within a genetic pathway for analysis of matched DNA methylation data. In our simulation studies, we demonstrated the superiority of using conditional logistic model over unconditional logistic model in high-dimensional variable selection problems for matched case-control data. We further investigated the benefits of utilizing biological group or graph information for matched case-control data. We applied the proposed method to a genome-wide DNA methylation study on hepatocellular carcinoma (HCC) where we investigated the DNA methylation levels of tumor and adjacent non-tumor tissues from HCC patients by using the Illumina Infinium HumanMethylation27 Beadchip. Several new CpG sites and genes known to be related to HCC were identified but were missed by the standard method in the original paper. Copyright © 2012 John Wiley & Sons, Ltd.

Issues Related to Obtaining Intelligence Quotient-Matched Controls in Autism Research

PubMed Central

Rao, Vanitha S.; Raman, Vijaya; Mysore, Ashok V.

2015-01-01

Background: Intelligence Quotient (IQ) is considered to be an index of global cognitive functioning and has traditionally been used as a fulcral measure in case-control studies in neuro-developmental disorders such as autism. Aim: The aim is to highlight the issues of “matching for IQ” with controls in autism research. Materials and Methods: Percentile scores on the Coloured Progressive Matrices of 20 children with autism in the age range of 5 to 12 years have been graphically compared with 21 age matched typically developing children. Results and Conclusions: The percentile scores of the so-called high functioning children with autism from special schools were well below that of typically developing children. There are many challenges when using IQ in case-control studies of autism. Alternative approaches need to be considered. PMID:25969598

Exploiting Fractional Order PID Controller Methods in Improving the Performance of Integer Order PID Controllers: A GA Based Approach

NASA Astrophysics Data System (ADS)

Mukherjee, Bijoy K.; Metia, Santanu

2009-10-01

The paper is divided into three parts. The first part gives a brief introduction to the overall paper, to fractional order PID (PIλDμ) controllers and to Genetic Algorithm (GA). In the second part, first it has been studied how the performance of an integer order PID controller deteriorates when implemented with lossy capacitors in its analog realization. Thereafter it has been shown that the lossy capacitors can be effectively modeled by fractional order terms. Then, a novel GA based method has been proposed to tune the controller parameters such that the original performance is retained even though realized with the same lossy capacitors. Simulation results have been presented to validate the usefulness of the method. Some Ziegler-Nichols type tuning rules for design of fractional order PID controllers have been proposed in the literature [11]. In the third part, a novel GA based method has been proposed which shows how equivalent integer order PID controllers can be obtained which will give performance level similar to those of the fractional order PID controllers thereby removing the complexity involved in the implementation of the latter. It has been shown with extensive simulation results that the equivalent integer order PID controllers more or less retain the robustness and iso-damping properties of the original fractional order PID controllers. Simulation results also show that the equivalent integer order PID controllers are more robust than the normal Ziegler-Nichols tuned PID controllers.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Determinants of unwanted pregnancies in India using matched case-control designs

PubMed Central

2012-01-01

Background In India, while the total fertility rate has been declined from 3.39 in 1992–93 to 2.68 in 2005–06, the prevalence of unintended pregnancy is still stagnant over the same period. A review of existing literature shows that within the country, there are variations in fertility preferences between different regions. Also there is a strong argument that the availability of a health facility at the village level plays an important role in reshaping the fertility behavior of women. Keeping in mind the fact that there is no information at the village level (which is the lowest geographical boundary) in the recent round of National Family Health Survey (NFHS-3), the specific objective of this study is to examine the impact of individual and household level variables on unwanted pregnancies without controlling the village level variation. Further, once the village level variation (i.e. unobserved variation) has been controlled, it is necessary to study whether there has been any alteration in the contribution of factors from earlier results of without adjusting the village level variation. Methods This paper attempts to examine the associated factors of unwanted pregnancies, without matching the village and after matching the village, by using the matched case–control design. Nationwide data from India’s latest NFHS-3 conducted during 2005–06 was used for the present study. Frequency and pair wise matching has been applied in the present paper and conditional logistic regression analysis was used to work out the models and to find out the factors associated with unwanted pregnancies. Results A major finding of this study was that 1:3 case–control study (without matching the village) shows that women belonging to non Hindu/Muslim religion, Scheduled Tribe, women who have experienced child loss and if the previous birth interval is 24 through 36 months were significant predictors of unwanted pregnancy. However, this relationship did not hold

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

NASA Astrophysics Data System (ADS)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN

NASA Astrophysics Data System (ADS)

Lee, Dong-gun; Wakamatsu, Ryuta; Koizumi, Atsushi; Terai, Yoshikazu; Fujiwara, Yasufumi

2013-08-01

The effects of Mg and Si codoping on Eu luminescence properties have been investigated in Eu-doped GaN (GaN:Eu). The Mg codoping into GaN:Eu produced novel luminescence centers consisting of Eu and Mg, and increased photoluminescence (PL) intensity in Eu,Mg-codoped GaN (GaN:Eu,Mg). However, this increased PL intensity was quenched by thermal annealing in N2 ambient, which is due to activation of Mg acceptors. In GaN:Eu,Mg codoped additionally with Si (GaN:Eu,Mg,Si), on the other hand, the Eu-Mg centers disappeared, while an additional luminescence center appeared. Furthermore, the additional luminescence center showed no quenching under N2 annealing because Si donors compensated for the Mg acceptors in GaN. Thermal quenching of the luminescence center was also approximately half of that in GaN:Eu. These results indicate that the codoping with additional impurities in GaN:Eu is a powerful technique to control Eu luminescence centers for realization of improved device performance in red light-emitting diodes using GaN:Eu.

Site-controlled crystalline InN growth from the V-pits of a GaN substrate

NASA Astrophysics Data System (ADS)

Kuo, Chien-Ting; Hsu, Lung-Hsing; Lai, Yung-Yu; Cheng, Shan-Yun; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen

2017-05-01

A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.

Statin Use and Fatal Prostate Cancer: A Matched Case-Control Study

PubMed Central

Marcella, Stephen W.; David, Alice; Ohman-Strickland, Pamela A.; Carson, Jeffery; Rhoads, George G.

2015-01-01

Background Statins are one of the most commonly prescribed medications in medical practice and prostate cancer is the most common male malignancy. While there has been no consistent evidence that statins affect cancer incidence, including prostate cancer, several reports suggest they may decrease the rate of advanced prostate cancer. However, no study has examined statin use and prostate cancer mortality specifically. We report here a population-based case-control investigation that examines this association. Methods We conducted a matched case-control study. Cases were residents of New Jersey ages 55 – 79 who died from prostate cancer between 1997–2000. We individually matched population-based controls by five-year age-group and race. Medication data were obtained identically for cases and controls from blinded medical chart review. We used conditional logistic regression to adjust for confounders. Results We identified 718 cases and obtained cooperation from 77% of their spouses (N=553). After review of medical records, 387 were eligible and 380 were matched to a control. The unadjusted odds ratio was 0.49 (95% CI, 0.34–0.70) which decreased to 0.37 (p<0.0001) after adjustment for education, waist size, BMI, comorbidities, and anti-hypertensive medication. There was little difference between lipophilic and hydrophilic statins but more risk reduction was noted for hi-potency statins (73%, p<0.0001) as compared to low-potency statins (31%, p=0.32). Conclusion Statin use is associated with substantial protection against prostate cancer death, adding to the epidemiologic evidence for an inhibitory effect on prostate cancer. PMID:22180145

Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer

NASA Astrophysics Data System (ADS)

Kaveh, M.; Gao, Q.; Jagadish, C.; Ge, J.; Duscher, G.; Wagner, H. P.

2016-12-01

Excitons are the most prominent optical excitations and controlling their emission is an important step towards new optical devices. We have investigated the exciton emission from uncoated and gold/aluminum quinoline (Alq3) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) using temperature-, intensity- and polarization dependent photoluminescence (PL). Plasmonic GaAs-AlGaAs-GaAs NWs with a ˜10 nm thick Au coating but without an Alq3 spacer layer reveal a significant reduction of the PL intensity of the exciton emission compared with the uncoated NW sample. Plasmonic NW samples with the same nominal Au coverage and an additional Alq3 interlayer of 3 or 6 nm thickness show a clearly stronger PL intensity which increases with rising Alq3 spacer thickness. Time-resolved (TR) PL measurements reveal an increase of the exciton decay rate by a factor of up to two with decreasing Alq3 spacer thickness suggesting the presence of Förster energy transfer from NW excitons to plasmon oscillations in the gold film. The weak change of the decay time, however, indicates that Förster energy-transfer is only partially responsible for the PL quenching in the gold coated NWs. The main reason for the reduction of the PL emission is attributed to a gold induced band-bending in the GaAs NW core which causes exciton dissociation. With increasing Alq3 spacer thickness the band-bending decreases leading to a reduction of the exciton dissociation and PL quenching. Our interpretation is supported by electron energy loss spectroscopy measurements which show a signal reduction and blue shift of defect (possibly EL2) transitions when gold particles are deposited on NWs compared with bare or Alq3 coated NWs.

Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer.

PubMed

Kaveh, M; Gao, Q; Jagadish, C; Ge, J; Duscher, G; Wagner, H P

2016-12-02

Excitons are the most prominent optical excitations and controlling their emission is an important step towards new optical devices. We have investigated the exciton emission from uncoated and gold/aluminum quinoline (Alq 3 ) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) using temperature-, intensity- and polarization dependent photoluminescence (PL). Plasmonic GaAs-AlGaAs-GaAs NWs with a ∼10 nm thick Au coating but without an Alq 3 spacer layer reveal a significant reduction of the PL intensity of the exciton emission compared with the uncoated NW sample. Plasmonic NW samples with the same nominal Au coverage and an additional Alq 3 interlayer of 3 or 6 nm thickness show a clearly stronger PL intensity which increases with rising Alq 3 spacer thickness. Time-resolved (TR) PL measurements reveal an increase of the exciton decay rate by a factor of up to two with decreasing Alq 3 spacer thickness suggesting the presence of Förster energy transfer from NW excitons to plasmon oscillations in the gold film. The weak change of the decay time, however, indicates that Förster energy-transfer is only partially responsible for the PL quenching in the gold coated NWs. The main reason for the reduction of the PL emission is attributed to a gold induced band-bending in the GaAs NW core which causes exciton dissociation. With increasing Alq 3 spacer thickness the band-bending decreases leading to a reduction of the exciton dissociation and PL quenching. Our interpretation is supported by electron energy loss spectroscopy measurements which show a signal reduction and blue shift of defect (possibly EL2) transitions when gold particles are deposited on NWs compared with bare or Alq 3 coated NWs.

Interleukin-10 -1082 G/A gene polymorphisms in Egyptian children with CAP: A case-control study.

PubMed

Azab, Seham F; Abdalhady, Mohamed A; Elsaadany, Hosam F; Elkomi, Mohamed A; Elhindawy, Eman M; Sarhan, Dina T; Salam, Mohamed M A; Allah, Mayy A N; Emam, Ahmed A; Noah, Maha A; Abdelsalam, Nasser I; Abdellatif, Sawsan H; Rass, Anwar A; Ismail, Sanaa M; Gheith, Tarek; Aziz, Khalid A; Hamed, Mohammed E; Abdelrahman, Hind M; Ahmed, Ahmed R; Nabil, Rehab M; Abdulmaksoud, Rehab S; Yousef, Hala Y

2016-06-01

Community-acquired pneumonia (CAP) is one of the leading causes of death worldwide. Cytokines are involved in the pathogenesis of CAP. To date, only a few studies concerned the association of interleukin-10 (IL-10) gene polymorphisms with CAP.In this study, we aimed to investigate whether the -1082(G/A) polymorphism in the promoter region of the IL-10 gene is involved in susceptibility to and the outcome of CAP, and we also measured the serum level of IL-10 to assess its relation to such polymorphism.This was a case-control study included 100 patients with CAP, and matched with age, gender, and ethnicity of 100 healthy control children. IL-10 -1082(G/A) gene polymorphism was genotyped by polymerase chain reaction-restriction fragment length polymorphism, while the serum IL-10 levels were measured by ELISA method.Compared to the controls subjects, the frequencies of the IL-10 -1082 AA genotype and A allele were observed to be overrepresented in patients with CAP (51%; odds ratio [OR] = 2.8; 95% confidence interval [CI]: 1.5-5.3 for the AA genotype; P < 0.01) and (70%; OR: 1.95; 95% CI: 1.27-3.00 for the A allele; P < 0.01, respectively). We found that patients with the GG genotype had significantly higher serum IL-10 levels (46.7 ± 9.5 pg/mL) compared to those with AG genotype (21.8 ± 4.5 pg/mL) and AA genotype (11.5 ± 3.3 pg/mL); P < 0.01, respectively. Our data revealed a significant positive association between the -1082 GG genotype and susceptibility to severe sepsis, acute respiratory failure, and hospital mortality (OR: 3.8; 95% CI: 1.3-11.2; P < 0.01).We demonstrate for the first time, to the best of our knowledge, that IL-10 -1082 (G/A) gene polymorphism may contribute to susceptibility to CAP in Egyptian children. Moreover, we observed that the presence of a G allele or GG genotype at the -1082 position of the promoter region of the IL-10 gene constitute risk factors for developing severe sepsis, acute respiratory

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

NASA Astrophysics Data System (ADS)

Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro

2018-06-01

On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Olsen, G. H.; Nuese, C. J.

1977-01-01

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2017-09-26

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer andmore » the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.« less

A Matched Filter Hypothesis for Cognitive Control

PubMed Central

Thompson-Schill, Sharon L.

2013-01-01

The prefrontal cortex exerts top-down influences on several aspects of higher-order cognition by functioning as a filtering mechanism that biases bottom-up sensory information toward a response that is optimal in context. However, research also indicates that not all aspects of complex cognition benefit from prefrontal regulation. Here we review and synthesize this research with an emphasis on the domains of learning and creative cognition, and outline how the appropriate level of cognitive control in a given situation can vary depending on the organism's goals and the characteristics of the given task. We offer a Matched Filter Hypothesis for cognitive control, which proposes that the optimal level of cognitive control is task-dependent, with high levels of cognitive control best suited to tasks that are explicit, rule-based, verbal or abstract, and can be accomplished given the capacity limits of working memory and with low levels of cognitive control best suited to tasks that are implicit, reward-based, non-verbal or intuitive, and which can be accomplished irrespective of working memory limitations. Our approach promotes a view of cognitive control as a tool adapted to a subset of common challenges, rather than an all-purpose optimization system suited to every problem the organism might encounter. PMID:24200920

Quasi-thermodynamic analysis of MOVPE growth of Ga xAl yIn 1- x- yN

NASA Astrophysics Data System (ADS)

Lu, Da-Cheng; Duan, Shukun

2002-01-01

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of Ga xAl yIn 1- x- yN alloys has been proposed. In view of the complex growth behavior of Ga xAl yIn 1- x- yN, we focus our attention on the gallium-rich quaternary alloys that are lattice matched to GaN, In 0.15Ga 0.85N or Al 0.15Ga 0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of Ga xAl yIn 1- x- yN alloy lattice matched to GaN, In 0.15Ga 0.85N or Al 0.15Ga 0.85N.

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

NASA Astrophysics Data System (ADS)

Abbasian, Sobhan; Sabbaghi-Nadooshan, Reza

2018-07-01

The operation of hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diode transferred more electrons and holes and showed less recombination between the top and bottom cells with increased efficiency ( η) in the InGaP/GaAs DJ solar cell. To achieve higher open-circuit voltage ( V oc), GaAs semiconductor was investigated to match with Al0.52In0.48P with bandgap of 2.4 eV, and replacement of the bottom cell in the InGaP/GaAs DJ solar cell with such an Al0.52In0.48P-GaAs heterojunction increased the photogeneration in this region. In the next step, addition of a BSF layer to the top cell required two BSF layers in the bottom cell to optimize the short-circuit current ( J sc) and η. The thickness and doping of the BSF layers were increased to obtain the highest η for the cell. The proposed structure was then compared with previous works. The proposed structure yielded V oc = 2.46 V, J sc = 30 mA/cm2, fill factor (FF) = 88.61%, and η = 65.51% under AM1.5 (1 sun) illumination.

Electrochemical Reduction Properties of Extended Space Charge InGaP and GaP Epitaxial Layers

DOE PAGES

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-06-17

Two lattice-matched epitaxial III-V phosphide films of thicknesses between 400 and 500 nm are grown by metal-organic chemical vapor deposition: InGaP on GaAs and GaP on Si. These structures are designed as photocathodes for solar-driven chemical reduction processes such as the hydrogen evolution reaction (HER) and CO 2 reduction into higher-order hydrocarbons. By using p + substrates and undoped epitaxial layers, an extended space-charge active region is achieved in the electrode with a design analogous to a p-i-n solar cell. When in contact with the methyl viologen MV + / + + redox couple, the InGaP/GaAs and GaP/Si cathodes generatemore » a photovoltage of 388 mV and 274 mV, respectively, under 1 sun illumination. Incident photon-to-current efficiency (IPCE) measurements confirm that the undoped active layers are exclusively performing light absorption and minority carrier diffusion-based charge transfer of high-energy photons. This shows that performance can be significantly boosted with lower-doped substrates. The InGaP/GaAs and GaP/Si electrodes are shown to drive the HER at saturation photocurrent densities of 9.05 mA/cm 2 and 2.34 mA/cm 2, respectively, under 1 sun illumination without a co-catalyst and under a large reduction bias. As a result, thicker films did not show a corresponding increased performance, and can be explained through understanding of crystalline defects and the electrostatics of the junctions.« less

Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.

PubMed

Qian, Fang; Brewster, Megan; Lim, Sung K; Ling, Yichuan; Greene, Christopher; Laboutin, Oleg; Johnson, Jerry W; Gradečak, Silvija; Cao, Yu; Li, Yat

2012-06-13

We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanowire core and an epitaxially grown (AlN/GaN)(m) (m = 3, 13) MQW shell. Optical excitation of individual MQW nanowires yielded strong, blue-shifted photoluminescence in the range 340-360 nm, with respect to the GaN near band-edge emission at 368.8 nm. Cathodoluminescence analysis on the cross-sectional MQW nanowire samples showed that the blue-shifted ultraviolet luminescence originated from the GaN quantum wells, while the defect-associated yellow luminescence was emitted from the GaN core. Computational simulation provided a quantitative analysis of the mini-band energies in the AlN/GaN superlattices and suggested the observed blue-shifted emission corresponds to the interband transitions between the second subbands of GaN, as a result of quantum confinement and strain effect in these AlN/GaN MQW nanowire structures.

Statin use and fatal prostate cancer: a matched case-control study.

PubMed

Marcella, Stephen W; David, Alice; Ohman-Strickland, Pamela A; Carson, Jeffery; Rhoads, George G

2012-08-15

Statins are some of the most commonly prescribed medications in medical practice, and prostate cancer is the most common malignancy among men. Although there has been no consistent evidence that statins affect cancer incidence, including prostate cancer, several reports suggest they may decrease the rate of advanced prostate cancer. However, no study to date has specifically examined statin use and prostate cancer mortality. The authors conducted this population-based case-control investigation to examine this association. This was a matched case-control study. Cases were residents of New Jersey ages 55 to 79 years who died from prostate cancer between 1997 and 2000. The cases were matched individually to population-based controls by 5-year age group and race. Medication data were obtained identically for cases and controls from blinded medical chart review. Conditional logistic regression was used to adjust for confounders. In total, 718 cases were identified, and cooperation was obtained from 77% of their spouses (N = 553). After a review of medical records, 387 men were eligible, and 380 were matched to a control. The unadjusted odds ratio was 0.49 (95% confidence interval, 0.34-0.70) and decreased to 0.37 (P < .0001) after adjusting for education, waist size, body mass index, comorbidities, and antihypertensive medication. There was little difference between lipophilic and hydrophilic statins, but more risk reduction was noted for high-potency statins (73%; P < .0001) compared with low-potency statins (31%; P = .32). Statin use was associated with substantial protection against prostate cancer death, adding to the epidemiologic evidence for an inhibitory effect on prostate cancer. Copyright © 2011 American Cancer Society.

Risk factors for achilles tendon rupture: A matched case control study.

PubMed

Noback, Peter C; Jang, Eugene S; Cuellar, Derly O; Seetharaman, Mani; Malagoli, Emiliano; Greisberg, Justin K; Vosseller, J Turner

2017-10-01

The purpose of this study was to elucidate whether body mass index (BMI), activity level, and other risk factors predispose patients to Achilles tendon ruptures. A retrospective review of 279 subjects was performed (93 with Achilles tendon rupture, matched 1:2 with 186 age/sex matched controls with ankle sprains). Demographic variables and risk factors for rupture were tabulated and compared. The rupture group mean BMI was 27.77 (95% CI, 26.94-28.49), and the control group mean BMI was 26.66 (95% CI, 26.06-27.27). These populations were found to be statistically equivalent (p=0.047 and p<0.001 by two one-sided t-test). A significantly higher proportion of those suffering ruptures reported regular athletic activity at baseline (74%) versus controls (59%, p=0.013). There was no clinically significant difference found in BMI between patients with ruptures and controls. Furthermore, it was found that patients who sustained ruptures were also more likely to be active at baseline than their ankle sprain counterparts. Copyright © 2017 Elsevier Ltd. All rights reserved.

Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

NASA Astrophysics Data System (ADS)

Edmunds, C.; Tang, L.; Cervantes, M.; Shirazi-HD, M.; Shao, J.; Grier, A.; Valavanis, A.; Cooper, J. D.; Li, D.; Gardner, G.; Zakharov, D. N.; Ikonić, Z.; Indjin, D.; Harrison, P.; Manfra, M. J.; Malis, O.

2013-12-01

We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Fat-free mass is not lower 24 months postbariatric surgery than nonoperated matched controls

PubMed Central

Strain, Gladys Witt; Ebel, Faith; Honohan, Jamie; Gagner, Michel; Dakin, Gregory F.; Pomp, Alfons; Gallagher, Dympna

2017-01-01

Objective Concerns about an excessive loss of fat-free mass (FFM) after bariatric surgery prompted this comparison of operated versus matched nonoperated controls regarding FFM. Setting University Hospital and University Research Unit in an urban medical center. Methods Body composition with bioelectric impedance (Tanita 310, Tanita Corp, Arlington Heights, IL) was measured approximately 2 years after bariatric surgery in weight stable patients and nonoperated weight stable controls matched for body mass index (BMI), gender, and age. t tests provided comparisons. Analysis of variance was used to compare FFM changes for 4 procedures. Levene’s test evaluated variance. Results Patients (n = 252; 24.7 ± 15 mo after surgery) and nonoperated controls (n = 252) were matched for gender (71.8% female), age (44.5 ± 11.0 yr), and BMI (32.8 ± 7.0 kg/m2). Patients had different surgical procedures: 107 gastric bypasses (RYGBs), 62 biliopancreatic diversions with duodenal switch (BPD/DSs), 40 adjustable gastric bands (AGBs), and 43 sleeve gastrectomies (LSGs). FFM percentage was significantly higher in the operated patients than controls, 66% versus 62%, P < .0001. For 3 procedures, the FFM was significantly higher; however, AGBs changed only 7.3 BMI units and FFM was not significantly different from their matched controls, 59.8% versus 58.2%. Across surgical groups, FFM percentage differed, P < .0001 (RYGB 66.5 ± 9.2%, BPD/DS 74.0 ± 9.3%, AGB 59.8 ± 7.0%, LSG 59.6 ± 9.3%). Variance was not different (P = .17). Conclusion Weight-reduced bariatric surgery patients have greater FFM compared with nonoperated matched controls. These findings support surgically assisted weight loss as a physiologic process and in general patients do not suffer from excessive FFM depletion after bariatric procedures. PMID:27387700

Fat-free mass is not lower 24 months postbariatric surgery than nonoperated matched controls.

PubMed

Strain, Gladys Witt; Ebel, Faith; Honohan, Jamie; Gagner, Michel; Dakin, Gregory F; Pomp, Alfons; Gallagher, Dympna

2017-01-01

Concerns about an excessive loss of fat-free mass (FFM) after bariatric surgery prompted this comparison of operated versus matched nonoperated controls regarding FFM. University Hospital and University Research Unit in an urban medical center. Body composition with bioelectric impedance (Tanita 310, Tanita Corp, Arlington Heights, IL) was measured approximately 2 years after bariatric surgery in weight stable patients and nonoperated weight stable controls matched for body mass index (BMI), gender, and age. t tests provided comparisons. Analysis of variance was used to compare FFM changes for 4 procedures. Levene's test evaluated variance. Patients (n = 252; 24.7±15 mo after surgery) and nonoperated controls (n = 252) were matched for gender (71.8% female), age (44.5±11.0 yr), and BMI (32.8±7.0 kg/m 2 ). Patients had different surgical procedures: 107 gastric bypasses (RYGBs), 62 biliopancreatic diversions with duodenal switch (BPD/DSs), 40 adjustable gastric bands (AGBs), and 43 sleeve gastrectomies (LSGs). FFM percentage was significantly higher in the operated patients than controls, 66% versus 62%, P<.0001. For 3 procedures, the FFM was significantly higher; however, AGBs changed only 7.3 BMI units and FFM was not significantly different from their matched controls, 59.8% versus 58.2%. Across surgical groups, FFM percentage differed, P<.0001 (RYGB 66.5±9.2%, BPD/DS 74.0±9.3%, AGB 59.8±7.0%, LSG 59.6±9.3%). Variance was not different (P = .17). Weight-reduced bariatric surgery patients have greater FFM compared with nonoperated matched controls. These findings support surgically assisted weight loss as a physiologic process and in general patients do not suffer from excessive FFM depletion after bariatric procedures. Copyright © 2017 American Society for Bariatric Surgery. Published by Elsevier Inc. All rights reserved.

Structural changes during annealing of GaInAsN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurtz, Sarah; Webb, J.; Gedvilas, L.

2001-02-05

The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at {approx}470 cm-1 (Ga--N stretch) and two or three bands at {approx}3100 cm-1 (N--H stretch). The change in the Ga--N stretch absorption can be explained if the nitrogen environment is converted from NGa{sub 4} to NInGa{sub 3} after annealing. The N--H stretch ismore » also changed after annealing, implying a second, and unrelated, structural change.« less

High-frequency electromechanical resonators based on thin GaTe

NASA Astrophysics Data System (ADS)

Chitara, Basant; Ya'akobovitz, Assaf

2017-10-01

Gallium telluride (GaTe) is a layered material, which exhibits a direct bandgap (˜1.65 eV) regardless of its thickness and therefore holds great potential for integration as a core element in stretchable optomechanical and optoelectronic devices. Here, we characterize and demonstrate the elastic properties and electromechanical resonators of suspended thin GaTe nanodrums. We used atomic force microscopy to extract the Young’s modulus of GaTe (average value ˜39 GPa) and to predict the resonance frequencies of suspended GaTe nanodrums of various geometries. Electromechanical resonators fabricated from suspended GaTe revealed fundamental resonance frequencies in the range of 10-25 MHz, which closely match predicted values. Therefore, this study paves the way for creating a new generation of GaTe based nanoelectromechanical devices with a direct bandgap vibrating element, which can serve as optomechanical sensors and actuators.

Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

NASA Astrophysics Data System (ADS)

Yun, Jin-Hyeon; Kim, Kyu Cheol; Yu, Yeon Tae; Yang, Jin Kyu; Polyakov, Alexander Y.; Lee, In-Hwan

2017-10-01

Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

DOE PAGES

Parameshwaran, Vijay; Clemens, Bruce

2016-08-17

With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less

Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parameshwaran, Vijay; Clemens, Bruce

With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Astrophysics Data System (ADS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

1986-01-01

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; ...

2015-10-12

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher thanmore » other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

Compact hybrid solar simulator with the spectral match beyond class A

NASA Astrophysics Data System (ADS)

Baguckis, Artūras; Novičkovas, Algirdas; Mekys, Algirdas; Tamošiūnas, Vincas

2016-07-01

A compact hybrid solar simulator with the spectral match beyond class A is proposed. Six types of high-power light-emitting diodes (LEDs) and tungsten halogen lamps in total were employed to obtain spectral match with <25% deviation from the standardized one in twelve spectral ranges between 400 and 1100 nm. All spectral ranges were twice as narrow than required by IEC 60904-9 Ed.2.0 and ASTM E927-10(2015) standards. Nonuniformity of the irradiance was evaluated and <2% deviation from the average value of the irradiance (corresponding to A class nonuniformity) can be obtained for the area of >3-cm diameter. A theoretical analysis was performed to evaluate possible performance of our simulator in the case of GaInP/GaAs/GaInAsP/GaInAs four-junction tandem solar cells and AM1.5D (ASTM G173-03 standard) spectrum. Lack of ultraviolet radiation in comparison to standard spectrum leads to 6.94% reduction of short-circuit current, which could be remedied with 137% increase of the output from blue LEDs. Excess of infrared radiation from halogen lamps outside ranges specified by standards is expected to lead to ˜0.77% voltage increase.

Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting.

PubMed

Caccamo, Lorenzo; Hartmann, Jana; Fàbrega, Cristian; Estradé, Sonia; Lilienkamp, Gerhard; Prades, Joan Daniel; Hoffmann, Martin W G; Ledig, Johannes; Wagner, Alexander; Wang, Xue; Lopez-Conesa, Lluis; Peiró, Francesca; Rebled, José Manuel; Wehmann, Hergo-Heinrich; Daum, Winfried; Shen, Hao; Waag, Andreas

2014-02-26

3D single-crystalline, well-aligned GaN-InGaN rod arrays are fabricated by selective area growth (SAG) metal-organic vapor phase epitaxy (MOVPE) for visible-light water splitting. Epitaxial InGaN layer grows successfully on 3D GaN rods to minimize defects within the GaN-InGaN heterojunctions. The indium concentration (In ∼ 0.30 ± 0.04) is rather homogeneous in InGaN shells along the radial and longitudinal directions. The growing strategy allows us to tune the band gap of the InGaN layer in order to match the visible absorption with the solar spectrum as well as to align the semiconductor bands close to the water redox potentials to achieve high efficiency. The relation between structure, surface, and photoelectrochemical property of GaN-InGaN is explored by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES), current-voltage, and open circuit potential (OCP) measurements. The epitaxial GaN-InGaN interface, pseudomorphic InGaN thin films, homogeneous and suitable indium concentration and defined surface orientation are properties demanded for systematic study and efficient photoanodes based on III-nitride heterojunctions.

Comparison of posture and balance in cancer survivors and age-matched controls.

PubMed

Schmitt, Abigail C; Repka, Chris P; Heise, Gary D; Challis, John H; Smith, Jeremy D

2017-12-01

The combination of peripheral neuropathy and other treatment-associated side effects is likely related to an increased incidence of falls in cancer survivors. The purpose of this study was to quantify differences in postural stability between healthy age-matched controls and cancer survivors. Quiet standing under four conditions (eyes open/closed, rigid/compliant surface) was assessed in 34 cancer survivors (2 males, 32 females; age: 54(13) yrs., height: 1.62(0.07) m; mass: 78.5(19.5) kg) and 34 age-matched controls (5 males, 29 females; age: 54(15) yrs.; height: 1.62(0.08) m; mass: 72.8(21.1) kg). Center of pressure data were collected for 30s and the trajectories were analyzed (100Hz). Three-factor (group*surface*vision) mixed model MANOVAs with repeated measures were used to determine the effect of vision and surface on postural steadiness between groups. Cancer survivors exhibited larger mediolateral root-mean square distance and velocity of the center of pressure, as well as increased 95% confidence ellipse area (P<0.01) when compared with their age-matched counterparts. For example, when removing visual input, cancer survivors had an average increase in 95% confidence ellipse area of 91.8mm 2 while standing on a rigid surface compared to a 68.6mm 2 increase for the control group. No frequency-based center of pressure measures differed between groups. Cancer survivors exhibit decreased postural steadiness when compared with age-matched controls. For cancer survivors undergoing rehabilitation focused on existing balance deficits, a small subset of the center of pressure measures presented here can be used to track progress throughout the intervention and potentially mitigate fall risk. Copyright © 2017 Elsevier Ltd. All rights reserved.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Stereo Sound Field Controller Design Using Partial Model Matching on the Frequency Domain

NASA Astrophysics Data System (ADS)

Kumon, Makoto; Miike, Katsuhiro; Eguchi, Kazuki; Mizumoto, Ikuro; Iwai, Zenta

The objective of sound field control is to make the acoustic characteristics of a listening room close to those of the desired system. Conventional methods apply feedforward controllers, such as digital filters, to achieve this objective. However, feedback controllers are also necessary in order to attenuate noise or to compensate the uncertainty of the acoustic characteristics of the listening room. Since acoustic characteristics are well modeled on the frequency domain, it is efficient to design controllers with respect to frequency responses, but it is difficult to design a multi input multi output (MIMO) control system on a wide frequency domain. In the present study, a partial model matching method on the frequency domain was adopted because this method requires only sampled data, rather than complex mathematical models of the plant, in order to design controllers for MIMO systems. The partial model matching method was applied to design two-degree-of-freedom controllers for acoustic equalization and noise reduction. Experiments demonstrated effectiveness of the proposed method.

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN

NASA Astrophysics Data System (ADS)

Mishkat-Ul-Masabih, Saadat; Luk, Ting Shan; Rishinaramangalam, Ashwin; Monavarian, Morteza; Nami, Mohsen; Feezell, Daniel

2018-01-01

We report the fabrication of m-plane nanoporous distributed Bragg reflectors (DBRs) on free-standing GaN substrates. The DBRs consist of 15 pairs of alternating undoped and highly doped n-type ([Si] = ˜3.7 × 1019 cm-3) GaN. Electrochemical (EC) etching was performed to convert the highly doped regions into a porous material, consequently reducing the effective refractive index of the layers. We demonstrate a DBR with peak reflectance greater than 98% at 450 nm with a stopband width of ˜72 nm. The polarization ratio of an incident polarized light source remains identical after reflection from the DBR, verifying that there is no drop in the polarization ratio due to the interfaces between the porous layers. We also quantify the porosity under various EC bias conditions for layers with different doping concentrations. The bias voltage controls the average pore diameter, while the pore density is primarily determined by the doping concentration. The results show that nanoporous DBRs on nonpolar free-standing GaN are promising candidates for high-reflectance, lattice-matched DBR mirrors for GaN-based resonant cavity devices.

Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

PubMed

Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2017-06-07

Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

Rare-earth gate oxides for GaAs MOSFET application

NASA Astrophysics Data System (ADS)

Kwon, Kwang-Ho; Yang, Jun-Kyu; Park, Hyung-Ho; Kim, Jongdae; Roh, Tae Moon

2006-08-01

Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2O 3, (Gd xLa 1- x) 2O 3, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd xLa 1- x) 2O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2O 3. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2. Energy band parameters such as Δ EC, Δ EV, and Eg were effectively controlled by the film composition.

Psychosocial Health of Disease-Free Breast Cancer Survivors Compared with Matched Non-cancer Controls.

PubMed

Park, Boyoung; Lee, Moo Hyun; Kong, Sun-Young; Lee, Eun Sook

2018-04-05

The present study investigated the psychosocial health of disease-free breast cancer survivors who receive health examinations compared to matched non-cancer controls in a community setting. We used baseline data from the Health Examinee cohort, which is composed of subjects participating in health. The disease-free breast cancer survivors were defined as those who were ≥2 years from initial diagnosis of breast cancer who had completed treatment. Females without a history of cancer were randomly selected at 1:4 ratio by 5-year age groups, education, and household income as a comparison group. We analyzed results from the Psychosocial Well-being Index-Short Form (PWI-SF) as a psychosocial health measurement. A total of 347 survivors of breast cancer and 1,388 matched controls were included. Total scores on the PWI-SF were lower in breast cancer survivors than matched non-cancer controls (p=0.006), suggesting a lower level of psychosocial stress in breast cancer survivors. In comparison to the control group, prevalence of drinking, smoking and obesity were lower, while exercising for ≥150 min/wk was higher in breast cancer survivors (p < 0.05). These findings suggest that breast cancer survivors have better health behaviors than their non-cancer controls. After adjusting for other sociodemographic variables, breast cancer survivors were 36% less likely to be included in the stress group (odds ratio, 0.64; 95% confidence interval, 0.42 to 0.98). The disease-free breast cancer survivors resuming daily life demonstrated better psychosocial health status compared to matched non-cancer controls.

Interfacial Structure and Chemistry of GaN on Ge(111)

NASA Astrophysics Data System (ADS)

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

2013-12-01

The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.

Novel BTlGaN semiconducting materials for infrared opto-electronic devices

NASA Astrophysics Data System (ADS)

Assali, Abdenacer; Bouslama, M'hamed

2017-03-01

BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

PubMed

Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E; Draxl, C; Trampert, A

2016-02-12

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Memory and phonological awareness in children with Benign Rolandic Epilepsy compared to a matched control group.

PubMed

Northcott, Ellen; Connolly, Anne M; Berroya, Anna; McIntyre, Jenny; Christie, Jane; Taylor, Alan; Bleasel, Andrew F; Lawson, John A; Bye, Ann M E

2007-06-01

In a previous study we demonstrated children with Benign Rolandic Epilepsy have normal intelligence and language ability. However, difficulties in verbal and visual memory and aspects of phonological awareness were found compared to normative data. To address the methodological limitations related to the use of normative data, we compared the same cohort of children with Benign Rolandic Epilepsy to a matched control group. Controls (n=40) matched on age and gender to the Benign Rolandic Epilepsy cohort underwent neuropsychological assessment. The life functioning of the control group was assessed using a modified version of the Quality of Life in Childhood Epilepsy Questionnaire (QOLCE). The study confirmed the previous findings of memory and phonological awareness difficulties. In addition, the children with Benign Rolandic Epilepsy had significantly lower IQ scores than the matched control group. Paired sample t-tests showed that on 8 of 11 QOLCE scales, children with Benign Rolandic Epilepsy were rated by parents as having poorer life functioning compared to matched controls, including lower parental ratings on the subscales of memory and language. Benign Rolandic Epilepsy has an excellent seizure prognosis, but this study further emphasizes potential cognitive difficulties. Using an age and gender matched control group, the previous findings of memory and phonological awareness difficulties were validated. These problems in cognition were also identified by parents of children with Benign Rolandic Epilepsy as problematic and impacting upon the child's quality of life.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Plasminogen activator inhibitor 1 4G/5G and -844G/A variants in idiopathic recurrent pregnancy loss.

PubMed

Magdoud, Kalthoum; Herbepin, Viviana G; Touraine, Renaud; Almawi, Wassim Y; Mahjoub, Touhami

2013-09-01

Plasminogen activator inhibitor type 1 (PAI-1) regulates fibrinolysis, and the common promoter region variants -675G/A (4G/5G) and -844G/A are associated with increased thrombotic risk. Despite evidence linking altered fibrinolysis with adverse pregnancy events, including idiopathic recurrent pregnancy loss (RPL), the contribution of PAI-1 variants to RPL risk remains controversial. We investigated the association between the PAI-1 -844G/A and 4G/5G (-675G/A) variants with altered risk of RPL. This was a case-control study involving 304 women with confirmed RPL and 371 age- and ethnically matched control women. PAI-1 genotyping was performed by PCR single-specific primer -675 (G/A) and real-time PCR (-844G/A) analysis. Minor allele frequency (MAF) of 4G/5G (P < 0.001), but not -844G/A (P = 0.507), was higher in RPL cases. PAI-1 4G/5G single-nucleotide polymorphism (SNP) was significantly associated with RPL under additive, dominant, and recessive genetic models; no association of -844G/A with RPL was seen irrespective of the genetic model tested. Taking common -844G/5G haplotype as reference (OR = 1.00), multivariate analysis confirmed the association of 4G-containing -844A/4G (P < 0.001) and -844G/4G (P = 0.011) haplotypes with increased RPL risk. 4G/5G, but not -844G/A, PAI-1 variant is associated with an increased risk of RPL. © 2013 John Wiley & Sons Ltd.

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga2O3 nanocrystalline films

NASA Astrophysics Data System (ADS)

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; Ramana, C. V.

2017-09-01

An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg ∼ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga 2 O 3 nanocrystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.

An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg~1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

Intrinsic polarization control in rectangular GaN nanowire lasers

DOE PAGES

Li, Changyi; Liu, Sheng; Luk, Ting S.; ...

2016-02-01

In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm 2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent controlmore » over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Hai-Ming; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Liang, Baolai, E-mail: bliang@cnsi.ucla.edu

2015-03-09

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richardson, Christopher J. K., E-mail: richardson@lps.umd.edu; He, Lei; Apiratikul, Paveen

The promise of the metamorphic growth paradigm is to enable design freedom of the substrate selection criteria beyond current choices that are limited by lattice matching requirements. A demonstration of this emerging degree of freedom is reported here by directly comparing identical laser structures grown both pseudomorphically on a GaSb substrate and metamorphically on a GaAs substrate. Improved thermal performance of the metamorphic laser material enables a higher output power before thermal roll-over begins. These performance gains are demonstrated in minimally processed gain-guided broad-area type-I lasers emitting close to 2-μm wavelengths and mounted p-side up. Continuous wave measurements at roommore » temperature yield a T{sub 0} of 145 K and peak output power of 192 mW from metamorphic lasers, compared to a T{sub 0} of 96 K and peak output power of 164 mW from identical lasers grown pseudomorphically on GaSb.« less

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga 2O 3 nanocrystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.

Here, an approach is presented to design refractory-metal incorporated Ga 2O 3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga 2O 3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga 2O 3), higher Mo-content results in amorphization. Chemically-induced band gap variability (E g ~ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality andmore » performance of Ga-Mo-O films is possible by tuning the Mo-content.« less

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga 2O 3 nanocrystalline films

DOE PAGES

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; ...

2017-07-01

Here, an approach is presented to design refractory-metal incorporated Ga 2O 3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga 2O 3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga 2O 3), higher Mo-content results in amorphization. Chemically-induced band gap variability (E g ~ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality andmore » performance of Ga-Mo-O films is possible by tuning the Mo-content.« less

Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation.

PubMed

Bietti, Sergio; Basso Basset, Francesco; Scarpellini, David; Fedorov, Alexey; Ballabio, Andrea; Esposito, Luca; Elborg, Martin; Kuroda, Takashi; Nemcsics, Akos; Toth, Lajos; Manzoni, Cristian; Vozzi, Caterina; Sanguinetti, Stefano

2018-06-18

A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule fabrication and the metal nanoparticle alignment is discussed. The tuning of the relative positioning of quantum dot molecules and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical quantum dot molecule was evaluated on the base of the morphological characterizations performed by Atomic Force Microscopy and cross sectional Scanning Electron Microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition. . © 2018 IOP Publishing Ltd.

Effectiveness of oral polio vaccination against paralytic poliomyelitis: a matched case-control study in Somalia.

PubMed

Mahamud, Abdirahman; Kamadjeu, Raoul; Webeck, Jenna; Mbaeyi, Chukwuma; Baranyikwa, Marie Therese; Birungi, Julianne; Nurbile, Yassin; Ehrhardt, Derek; Shukla, Hemant; Chatterjee, Anirban; Mulugeta, Abraham

2014-11-01

After the last case of type 1 wild poliovirus (WPV1) was reported in 2007, Somalia experienced another outbreak of WPV1 (189 cases) in 2013. We conducted a retrospective, matched case-control study to evaluate the vaccine effectiveness (VE) of oral polio vaccine (OPV). We retrieved information from the Somalia Surveillance Database. A case was defined as any case of acute flaccid paralysis (AFP) with virological confirmation of WPV1. We selected two groups of controls for each case: non-polio AFP cases ("NPAFP controls") matched to WPV1 cases by age, date of onset of paralysis and region; and asymptomatic "neighborhood controls," matched by age. Using conditional logistic regression, we estimated the VE of OPV as (1-odds ratio)×100. We matched 99 WPV cases with 99 NPAFP controls and 134 WPV1 cases with 268 neighborhood controls. Using NPAFP controls, the overall VE was 70% (95% confidence interval [CI], 37-86), 59% (2-83) among 1-3 dose recipients, 77% (95% CI, 46-91) among ≥4 dose recipients. In neighborhood controls, the overall VE was 95% (95% CI, 84-98), 92% (72-98) among 1-3 dose recipients, and 97% (89-99) among ≥4 dose recipients. When the analysis was limited to cases and controls ≤24 months old, the overall VE in NPAFP and neighborhood controls was 95% (95% CI, 65-99) and 97% (95% CI, 76-100), respectively. Among individuals who were fully vaccinated with OPV, vaccination was effective at preventing WPV1 in Somalia. Published by Oxford University Press on behalf of the Infectious Diseases Society of America 2014. This work is written by (a) US Government employee(s) and is in the public domain in the US.

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

NASA Technical Reports Server (NTRS)

Shanley, J. F.; Paulauskas, W. A.; Taylor, D. R.

1982-01-01

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Rhodium doped InGaAs: A superior ultrafast photoconductor

NASA Astrophysics Data System (ADS)

Kohlhaas, R. B.; Globisch, B.; Nellen, S.; Liebermeister, L.; Schell, M.; Richter, P.; Koch, M.; Semtsiv, M. P.; Masselink, W. T.

2018-03-01

The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs:Rh is used as an ultrafast photoconductor, carrier lifetimes as short as 100 fs for optically excited electrons are measured. Rh doping compensates free carriers so that a near intrinsic carrier concentration can be achieved. At the same time, InGaAs:Rh exhibits a large electron mobility of 1000 cm2/V s. Therefore, this material is a very promising candidate for application as a semi-insulating layer, THz antenna, or semiconductor saturable absorber mirror.

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

NASA Astrophysics Data System (ADS)

Chang, C. W.; Wadekar, P. V.; Guo, S. S.; Cheng, Y. J.; Chou, M.; Huang, H. C.; Hsieh, W. C.; Lai, W. C.; Chen, Q. Y.; Tu, L. W.

2018-01-01

For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar m-plane gallium nitride ( m-GaN) thin films are studied. The samples were grown using plasma-assisted molecular beam epitaxy on m-plane sapphire substrates. Growth of pure m-GaN thin films, concomitant with smooth surfaces is possible at low radio frequency powers and high growth temperatures as judged by the high resolution x-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Defect types and densities are quantified using transmission electron microscopy, while Raman spectroscopy was used to analyze the in-plane stress in the thin films which matches the lattice mismatch analysis. Energy dispersive spectroscopy and cathodoluminescence support a congruent growth and a dominant near band edge emission. From the analysis, a narrow growth window is discovered wherein epitaxial growth of pure m-plane GaN samples free of secondary phases with narrow rocking curves and considerable smooth surfaces are successfully demonstrated.

Magnetic field controlled electronic state and electric field controlled magnetic state in α-Fe1.6Ga0.4O3 oxide

NASA Astrophysics Data System (ADS)

Lone, Abdul Gaffar; Bhowmik, R. N.

2018-04-01

We have prepared α-Fe1.6Ga0.4O3 (Ga doped α-Fe2O3) system in rhombohedral phase. The material has shown room temperature ferroelectric and ferromagnetic properties. The existence of magneto-electric coupling at room temperature has been confirmed by the experimental observation of magnetic field controlled electric properties and electric field controlled magnetization. The current-voltage characteristics were controlled by external magnetic field. The magnetic state switching and exchange bias effect are highly sensitive to the polarity and ON and OFF modes of external electric field. Such materials can find novel applications in magneto-electronic devices, especially in the field of electric field controlled spintronics devices and energy storage devices which need low power consumption.

Subwavelength nonlinear phase control and anomalous phase matching in plasmonic metasurfaces

NASA Astrophysics Data System (ADS)

Almeida, Euclides; Shalem, Guy; Prior, Yehiam

2016-01-01

Metasurfaces, and in particular those containing plasmonic-based metallic elements, constitute an attractive set of materials with a potential for replacing standard bulky optical elements. In recent years, increasing attention has been focused on their nonlinear optical properties, particularly in the context of second and third harmonic generation and beam steering by phase gratings. Here, we harness the full phase control enabled by subwavelength plasmonic elements to demonstrate a unique metasurface phase matching that is required for efficient nonlinear processes. We discuss the difference between scattering by a grating and by subwavelength phase-gradient elements. We show that for such interfaces an anomalous phase-matching condition prevails, which is the nonlinear analogue of the generalized Snell's law. The subwavelength phase control of optical nonlinearities paves the way for the design of ultrathin, flat nonlinear optical elements. We demonstrate nonlinear metasurface lenses, which act both as generators and as manipulators of the frequency-converted signal.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2016-04-01

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Propensity score matching for selection of local areas as controls for evaluation of effects of alcohol policies in case series and quasi case-control designs.

PubMed

de Vocht, F; Campbell, R; Brennan, A; Mooney, J; Angus, C; Hickman, M

2016-03-01

Area-level public health interventions can be difficult to evaluate using natural experiments. We describe the use of propensity score matching (PSM) to select control local authority areas (LAU) to evaluate the public health impact of alcohol policies for (1) prospective evaluation of alcohol policies using area-level data, and (2) a novel two-stage quasi case-control design. Ecological. Alcohol-related indicator data (Local Alcohol Profiles for England, PHE Health Profiles and ONS data) were linked at LAU level. Six LAUs (Blackpool, Bradford, Bristol, Ipswich, Islington, and Newcastle-upon-Tyne) as sample intervention or case areas were matched to two control LAUs each using PSM. For the quasi case-control study a second stage was added aimed at obtaining maximum contrast in outcomes based on propensity scores. Matching was evaluated based on average standardized absolute mean differences (ASAM) and variable-specific P-values after matching. The six LAUs were matched to suitable control areas (with ASAM < 0.20, P-values >0.05 indicating good matching) for a prospective evaluation study that sought areas that were similar at baseline in order to assess whether a change in intervention exposure led to a change in the outcome (alcohol related harm). PSM also generated appropriate matches for a quasi case-control study--whereby the contrast in health outcomes between cases and control areas needed to be optimized in order to assess retrospectively whether differences in intervention exposure were associated with the outcome. The use of PSM for area-level alcohol policy evaluation, but also for other public health interventions, will improve the value of these evaluations by objective and quantitative selection of the most appropriate control areas. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

DOE PAGES

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; ...

2015-11-18

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

DOE PAGES

Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; ...

2009-01-01

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

NASA Astrophysics Data System (ADS)

Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu

2017-12-01

Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage (V th) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm2 V-1 s-1 is achieved on [Mg] = 6.5 × 1016 cm-3 layer with V th = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.

Evaluation of a disease management program for COPD using propensity matched control group

PubMed Central

George, Pradeep Paul; Heng, Bee Hoon; Lim, Tow Keang; Abisheganaden, John; Ng, Alan Wei Keong; Lim, Fong Seng

2016-01-01

Background Disease management programs (DMPs) have proliferated recently as a means of improving the quality and efficiency of care for patients with chronic illness. These programs include education about disease, optimization of evidence-based medications, information and support from case managers, and institution of self-management principles. Chronic obstructive pulmonary disease (COPD) is a major cause of morbidity and mortality in Singapore and worldwide. DMP aims to reduce mortality, hospitalizations, and average length of stay in such patients. This study assesses the outcomes of the DMP, comparing the propensity score matched DMP patients with controls. Methods DMP patients were compared with the controls, who were COPD patients fulfilling the DMP’s inclusion criteria but not included in the program. Control patients were identified from Operations Data Store (ODS) database. The outcomes of interest were average length of stay, number of days admitted to hospital per 100 person days, readmission, and mortality rates per person year. The risk of death and readmission was estimated using Cox, and competing risk regression respectively. Propensity score was estimated to identify the predictors of DMP enrolment. DMP patients and controls were matched on their propensity score. Results There were 170 matched DMP patients and control patients having 287 and 207 hospitalizations respectively. Program patient had lower mortality than the controls (0.12 vs. 0.27 per person year); cumulative 1-year survival was 91% among program patient and 76% among the control patients. Readmission, and hospital days per 100 person-days was higher for the program patients (0.36 vs. 0.17 per person year), and (2.19 vs. 1.88 per person year) respectively. Conclusions Participation in “DMP” was associated with lower all-cause mortality when compared to the controls. This survival gain in the program patients was paradoxically associated with an increase in readmission rate and

Evaluation of a disease management program for COPD using propensity matched control group.

PubMed

George, Pradeep Paul; Heng, Bee Hoon; Lim, Tow Keang; Abisheganaden, John; Ng, Alan Wei Keong; Verma, Akash; Lim, Fong Seng

2016-07-01

Disease management programs (DMPs) have proliferated recently as a means of improving the quality and efficiency of care for patients with chronic illness. These programs include education about disease, optimization of evidence-based medications, information and support from case managers, and institution of self-management principles. Chronic obstructive pulmonary disease (COPD) is a major cause of morbidity and mortality in Singapore and worldwide. DMP aims to reduce mortality, hospitalizations, and average length of stay in such patients. This study assesses the outcomes of the DMP, comparing the propensity score matched DMP patients with controls. DMP patients were compared with the controls, who were COPD patients fulfilling the DMP's inclusion criteria but not included in the program. Control patients were identified from Operations Data Store (ODS) database. The outcomes of interest were average length of stay, number of days admitted to hospital per 100 person days, readmission, and mortality rates per person year. The risk of death and readmission was estimated using Cox, and competing risk regression respectively. Propensity score was estimated to identify the predictors of DMP enrolment. DMP patients and controls were matched on their propensity score. There were 170 matched DMP patients and control patients having 287 and 207 hospitalizations respectively. Program patient had lower mortality than the controls (0.12 vs. 0.27 per person year); cumulative 1-year survival was 91% among program patient and 76% among the control patients. Readmission, and hospital days per 100 person-days was higher for the program patients (0.36 vs. 0.17 per person year), and (2.19 vs. 1.88 per person year) respectively. Participation in "DMP" was associated with lower all-cause mortality when compared to the controls. This survival gain in the program patients was paradoxically associated with an increase in readmission rate and total hospital days.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

NASA Astrophysics Data System (ADS)

Bryan, Zachary; Hoffmann, Marc; Tweedie, James; Kirste, Ronny; Callsen, Gordon; Bryan, Isaac; Rice, Anthony; Bobea, Milena; Mita, Seiji; Xie, Jinqiao; Sitar, Zlatko; Collazo, Ramón

2013-05-01

In this study, Fermi level control of point defects during metalorganic chemical vapor deposition (MOCVD) of Mg-doped GaN has been demonstrated by above-bandgap illumination. Resistivity and photoluminescence (PL) measurements are used to investigate the Mg dopant activation of samples with Mg concentration of 2 × 1019 cm-3 grown with and without exposure to ultraviolet (UV) illumination. Samples grown under UV illumination have five orders of magnitude lower resistivity values compared with typical unannealed GaN:Mg samples. The PL spectra of samples grown with UV exposure are similar to the spectra of those grown without UV exposure that were subsequently annealed, indicating a different incorporation of compensating defects during growth. Based on PL and resistivity measurements we show that Fermi level control of point defects during growth of III-nitrides is feasible.

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

NASA Astrophysics Data System (ADS)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

NASA Astrophysics Data System (ADS)

Reyes, D. F.; Braza, V.; Gonzalo, A.; Utrilla, A. D.; Ulloa, J. M.; Ben, T.; González, D.

2018-06-01

GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-junction solar cells due to the bandgap tunability in the 1.0-1.15 eV range and the possibility to match the lattice constant to the GaAs substrates. Recently, the use of GaAsSb/GaAsN superlattices (SLs) has been shown as an effective way to enhance photovoltaic efficiency as compared to the quaternary counterparts. Here we apply a combination of HR-XRD and cross-sectional (S)TEM techniques together with theoretical calculations to analyse the compositional distribution in GaAsSb/GaAsN SLs with different periodicity. The measurements of compositional profiles indicate that Sb is strongly segregated into the GaAsN layers while N remains confined where it is deposited. We demonstrate that the Sb profiles run as a shark-fin waveform that can be precisely described with a one-dimensional model where segregation of the supplied Sb is promoted by a three-layer fluid exchange mechanism. Moreover, the role played by the periodicity in the effectiveness of the Sb incorporation adds a new level of complexity. The modelling of Sb segregation in the GaAsSb/GaAsN SLs system could be used to carry out more precise pseudopotential calculations on the band structure in order to understand and predict their electrical and optical behaviour.

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

PubMed Central

Hussain, Sajid; Pozzato, Alessandro; Tormen, Massimo; Zannier, Valentina; Biasiol, Giorgio

2016-01-01

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots. PMID:28773333

Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures

NASA Astrophysics Data System (ADS)

Mintairov, A. M.; Kapaldo, J.; Merz, J. L.; Rouvimov, S.; Lebedev, D. V.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Belyaev, K. G.; Rakhlin, M. V.; Toropov, A. A.; Brunkov, P. N.; Vlasov, A. S.; Zadiranov, Yu. M.; Blundell, S. A.; Mozharov, A. M.; Mukhin, I.; Yakimov, M.; Oktyabrsky, S.; Shelaev, A. V.; Bykov, V. A.

2018-05-01

Structural and emission properties of few-electron In(Ga)P/GaInP quantum dots (QDs) representing natural Wigner molecules (WM) and whispering gallery mode (WGM) electron (e ) cavities have been investigated. QD structures were grown using self-organized metal-organic vapor phase epitaxy and deposition from ˜3 to 7 monolayers of InP at 700 °C. Using atomic force microscopy, transmission electron microscopy, near-field scanning optical microscopy (NSOM), and μ -photoluminescence (μ -PL) spectra we obtained In(Ga)P/GaInP QDs having lateral size 80-180 nm, height 5-30 nm, Ga content 0.0-0.4, density 2 -10 μm-2 , and electron population up to 20 and demonstrated control of their density and size distribution. Using high-spatial-resolution low-temperature PL spectra, NSOM imaging, and calculations of charge density distributions we observed Wigner localization and e -cavity effects for a series of dots having quantum confinement ℏ ω0=0.5 -6 meV . We used these data together with time-resolved PL measurements to clarify the effect of Coulomb interaction and WM formation on emission spectra of few-electron QDs. We present direct observation of 2 e , 6 e , and 9 e WMs; 2 e and 4 e WGMs; and Fabry-Perot e modes and establish conditions of e -WGM-cavity formation in these QDs.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon andmore » oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.« less

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Individual and interpersonal emotion regulation among adults with substance use disorders and matched controls.

PubMed

Dingle, Genevieve A; Neves, Diana da Costa; Alhadad, Sakinah S J; Hides, Leanne

2018-06-01

Self-report studies show that negative emotional states and ineffective use of emotion regulation strategies are key maintaining factors of substance use disorders (SUD). However, experimental research into emotional processing in adults with SUD is in its infancy. Theoretical conceptualizations of emotion regulation have shifted from a focus on individual (internal) processes to one that encompasses social and interpersonal functions - including the regulation of facial expression of emotion. The purpose of this study was to examine the individual and interpersonal emotion regulation capacity of 35 adults in residential treatment diagnosed with a SUD compared to 35 demographically matched controls (both samples M age  = 25 years; 37% females). Participants completed a facial emotion expression flexibility task while viewing emotive images, as well as the Difficulties of Emotion Regulation Scale (DERS) and the Social (Emotion) Expectancy Scale (SES). Adults in SUD treatment experienced significantly more emotion regulation difficulties on all DERS subscales than controls. They also reported higher levels of negative self-evaluation and social expectancies not to feel negative emotions (anxiety and depression) compared to controls. Moreover, when viewing emotive images, the treatment sample showed significantly less flexibility of their emotional expression compared to the control sample. These findings demonstrate that the awareness, expression, and regulation of emotions are particularly difficult for people with SUD and this may maintain their substance use and provide an important target for treatment. Compared to matched controls, adults with substance use disorders self-report significantly more difficulties with emotional awareness and regulation. Compared to matched controls, adults with substance use disorders report significantly greater expectancies not to show depression and anxiety. When viewing positive and negative images, adults with substance use

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Control wafer bow of InGaP on 200 mm Si by strain engineering

NASA Astrophysics Data System (ADS)

Wang, Bing; Bao, Shuyu; Made, Riko I.; Lee, Kwang Hong; Wang, Cong; Eng Kian Lee, Kenneth; Fitzgerald, Eugene A.; Michel, Jurgen

2017-12-01

When epitaxially growing III-V compound semiconductors on Si substrates the mismatch of coefficients of thermal expansion (CTEs) between III-V and Si causes stress and wafer bow. The wafer bow is deleterious for some wafer-scale processing especially when the wafer size is large. Strain engineering was applied in the epitaxy of InGaP films on 200 mm silicon wafers having high quality germanium buffers. By applying compressive strain in the InGaP films to compensate the tensile strain induced by CTE mismatch, wafer bow was decreased from about 100 μm to less than 50 μm. X-ray diffraction studies show a clear trend between the decrease of wafer bow and the compensation of CTE mismatch induced tensile strain in the InGaP layers. In addition, the anisotropic strain relaxation in InGaP films resulted in anisotropic wafer bow along two perpendicular (110) directions. Etch pit density and plane-view transmission electron microscopy characterizations indicate that threading dislocation densities did not change significantly due to the lattice-mismatch applied in the InGaP films. This study shows that strain engineering is an effective method to control wafer bow when growing III-V semiconductors on large size Si substrates.

Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

1984-01-01

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

The art of matching brain tissue from patients and controls for postmortem research.

PubMed

Bao, Ai-Min; Swaab, Dick F

2018-01-01

The quality of postmortem research depends strongly on a thorough clinical investigation and documentation of the patient's disorder and therapies. In addition, a systematic and professional neuropathologic investigation of both cases and controls is absolutely crucial. In the experience of the Netherlands Brain Bank (NBB), about 20% of clinical neurologic diagnoses, despite being made in first-rate clinics, have to be revised or require an extra diagnosis after a complete and thorough review by the NBB. The neuropathology examination may reveal for instance that the "controls" already have preclinical neurodegenerative alterations. In postmortem studies the patient and control groups must be matched for as many of the known confounding factors as possible. This is necessary to make the groups as similar as possible, except for the topic being investigated. Confounding factors are present before, during, and after death. They are respectively: (1) genetic background, systemic diseases, duration and gravity of illness, medicines and addictive compounds used, age, sex, gender identity, sexual orientation, circadian and seasonal fluctuations, lateralization; (2) agonal state, stress of dying; and (3) postmortem delay, freezing procedures, fixation and storage time. Consequently, a brain bank should have a large number of controls at its disposal for appropriate matching. If matching fails for some confounders, then their influence may be determined by statistical methods such as analysis of variance or regression models. Copyright © 2018 Elsevier B.V. All rights reserved.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

PubMed

Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-02-25

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer

NASA Astrophysics Data System (ADS)

Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao; Xing, Yao; Zhang, Liqun; Yang, Hui; Long, Heng; Li, Mo

2017-06-01

Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρc indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρc is improved to 6.80 × 10-5 Ω × cm2 with a carbon concentration of 8.3 × 1017 cm-3 in p++-GaN layer, when the growth temperature, pressure and flow rate of CP2Mg and TMGa are 940 °C, 100 Torr, 3 μmol/min and 28 μmol/min, respectively.

Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

PubMed

Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2016-06-28

In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

Evaluation of implantation-disordering of (InGa)As/GaAs strained-layer superlattices

NASA Astrophysics Data System (ADS)

Myers, D. R.; Barnes, C. E.; Arnold, G. W.; Dawson, L. R.; Biefeld, R. M.; Zipperian, T. E.; Gourley, P. L.; Fritz, I. J.

The optical and transport properties of InO 2GaO 8As/GaAs strained-layer superlattices (SLS's) which were implanted either with 5 x 10 to the 15th power, 250 keV Zn(+) or with 5 x 10 to 14th power/square cm/cm(2), 70 keV Be(+) and annealed under an arsenic overpressure at 600 (0) C were examined. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS' produced electroluminescence internsity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful for strained-layer superlattices as in lattice-matched systems.

Varieties of Stimulus Control in Matching-to-Sample: A Kernel Analysis

ERIC Educational Resources Information Center

Fields, Lanny; Garruto, Michelle; Watanabe, Mari

2010-01-01

Conditional discrimination or matching-to-sample procedures have been used to study a wide range of complex psychological phenomena with infrahuman and human subjects. In most studies, the percentage of trials in which a subject selects the comparison stimulus that is related to the sample stimulus is used to index the control exerted by the…

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Kaess, Felix; Tweedie, James; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-10-01

Compensating point defect reduction in wide bandgap semiconductors is possible by above bandgap illumination based defect quasi Fermi level (dQFL) control. The point defect control technique employs excess minority carriers that influence the dQFL of the compensator, increase the corresponding defect formation energy, and consequently are responsible for point defect reduction. Previous studies on various defects in GaN and AlGaN have shown good agreement with the theoretical model, but no direct evidence for the role of minority carriers was provided. In this work, we provide direct evidence for the role of minority carriers in reducing point defects by studying the predicted increase in work done against defect (CN-1) formation with the decrease in the Fermi level (free carrier concentration) in Si doped GaN at a constant illumination intensity. Comparative defect photoluminescence measurements on illuminated and dark regions of GaN show an excellent quantitative agreement with the theory by exhibiting a greater reduction in yellow luminescence attributed to CN-1 at lower doping, thereby providing conclusive evidence for the role of the minority carriers in Fermi level control-based point defect reduction.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

NASA Astrophysics Data System (ADS)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

InGaAs Avalanche Photodetectors

NASA Astrophysics Data System (ADS)

Stillman, G. E.; Cook, L. W.; Tashima, M. M.; Tabatabaie, N.

1981-07-01

The development of optical fibers with extremely low loss and near zero pulse dispersion in the 1.30-1.55 pm spectral range has generated considerable interest in emitters and detectors for use in optical fiber communication systems utilizing these wavelengths. The InGaAsP quaternary alloy, lattice matched to InP, is one of at least three different semi-conductor alloys being evaluated for detector applications in these systems. In this paper we will review some of the previous results obtained in InGaAsP/InP photodetectors, and discuss the possible mechanisms responsible for the large dark current observed in some of these devices. The material properties and device structures which minimize the dark current are described, and the possibilities of achieving efficient avalanche photodiodes using these materials are evaluated.

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

NASA Astrophysics Data System (ADS)

Schimpke, Tilman; Lugauer, H.-J.; Avramescu, A.; Varghese, T.; Koller, A.; Hartmann, J.; Ledig, J.; Waag, A.; Strassburg, M.

2016-03-01

Today's InGaN-based white LEDs still suffer from a significant efficiency reduction at elevated current densities, the so-called "Droop". Core-shell microrods, with quantum wells (QWs) covering their entire surface, enable a tremendous increase in active area scaling with the rod's aspect ratio. Enlarging the active area on a given footprint area is a viable and cost effective route to mitigate the droop by effectively reducing the local current density. Microrods were grown in a large volume metal-organic vapor phase epitaxy (MOVPE) reactor on GaN-on-sapphire substrates with a thin, patterned SiO2 mask for position control. Out of the mask openings, pencil-shaped n-doped GaN microrod cores were grown under conditions favoring 3D growth. In a second growth step, these cores are covered with a shell containing a quantum well and a p-n junction to form LED structures. The emission from the QWs on the different facets was studied using resonant temperature-dependent photoluminescence (PL) and cathodoluminescence (CL) measurements. The crystal quality of the structures was investigated by transmission electron microscopy (TEM) showing the absence of extended defects like threading dislocations in the 3D core. In order to fabricate LED chips, dedicated processes were developed to accommodate for the special requirements of the 3D geometry. The electrical and optical properties of ensembles of tens of thousands microrods connected in parallel are discussed.

Strain dependence of In incorporation in m-oriented GaInN/GaN multi quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horenburg, Philipp, E-mail: p.horenburg@tu-braunschweig.de; Buß, Ernst Ronald; Rossow, Uwe

We demonstrate a strong dependence of the indium incorporation efficiency on the strain state in m-oriented GaInN/GaN multi quantum well (MQW) structures. Insertion of a partially relaxed AlInN buffer layer opens up the opportunity to manipulate the strain situation in the MQW grown on top. By lattice-matching this AlInN layer to the c- or a-axis of the underlying GaN, relaxation towards larger a- or smaller c-lattice constants can be induced, respectively. This results in a modified template for the subsequent MQW growth. From X-ray diffraction and photoluminescence measurements, we derive significant effects on the In incorporation efficiency and In concentrationsmore » in the quantum well (QW) up to x = 38% without additional accumulation of strain energy in the QW region. This makes strain manipulation a very promising method for growth of high In-containing MQW structures for efficient, long wavelength light-emitting devices.« less

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yi-Chen; Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Chiang, Te-Kuang

2015-10-15

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightlymore » smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

"Congratulations, you have been randomized into the control group!(?)": issues to consider when recruiting schools for matched-pair randomized control trials of prevention programs.

PubMed

Ji, Peter; DuBois, David L; Flay, Brian R; Brechling, Vanessa

2008-03-01

Recruiting schools into a matched-pair randomized control trial (MP-RCT) to evaluate the efficacy of a school-level prevention program presents challenges for researchers. We considered which of 2 procedures would be most effective for recruiting schools into the study and assigning them to conditions. In 1 procedure (recruit and match/randomize), we would recruit schools and match them prior to randomization, and in the other (match/randomize and recruitment), we would match schools and randomize them prior to recruitment. We considered how each procedure impacted the randomization process and our ability to recruit schools into the study. After implementing the selected procedure, the equivalence of both treatment and control group schools and the participating and nonparticipating schools on school demographic variables was evaluated. We decided on the recruit and match/randomize procedure because we thought it would provide the opportunity to build rapport with the schools and prepare them for the randomization process, thereby increasing the likelihood that they would accept their randomly assigned conditions. Neither the treatment and control group schools nor the participating and nonparticipating schools exhibited statistically significant differences from each other on any of the school demographic variables. Recruitment of schools prior to matching and randomization in an MP-RCT may facilitate the recruitment of schools and thus enhance both the statistical power and the representativeness of study findings. Future research would benefit from the consideration of a broader range of variables (eg, readiness to implement a comprehensive prevention program) both in matching schools and in evaluating their representativeness to nonparticipating schools.

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mäkelä, J., E-mail: jaakko.m.makela@utu.fi, E-mail: pekka.laukkanen@utu.fi, E-mail: rmwallace@utdallas.edu; Tuominen, M.; Yasir, M.

2015-08-10

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

GaSb and Ga1-xInxSb Thermophotovoltaic Cells using Diffused Junction Technology in Bulk Substrates

NASA Astrophysics Data System (ADS)

Dutta, P. S.; Borrego, J. M.; Ehsani, H.; Rajagopalan, G.; Bhat, I. B.; Gutmann, R. J.; Nichols, G.; Baldasaro, P. F.

2003-01-01

This paper presents results of experimental and theoretical research on antimonide- based thermophotovoltaic (TPV) materials and cells. The topics discussed include: growth of large diameter ternary GaInSb bulk crystals, substrate preparation, diffused junction processes, cell fabrication and characterization, and, cell modeling. Ternary GaInSb boules up to 2 inches in diameter have been grown using the vertical Bridgman technique with a novel self solute feeding technique. A single step diffusion process followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency, p-n junction GaSb and GaInSb thermophotovoltaic cells. The optimum junction depth to obtain the highest quantum efficiency and open circuit voltage has been identified based on diffusion lengths (or minority carrier lifetimes), carrier mobility and experimental diffused impurity profiles. Theoretical assessment of the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion in bulk substrates has been performed using PC-1D one-dimensional computer simulations. Several factors affecting the cell performances such as the effects of emitter doping profile, emitter thickness and recombination mechanisms (Auger, radiative and Shockley-Read-Hall), the advantages of surface passivation and the impact of dark current due to the metallic grid will be discussed. The conditions needed for diffused junction cells on ternary and binary substrates to achieve similar performance to the epitaxially grown lattice- matched quaternary cells are identified.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

Serum albumin-adjusted glycated albumin is an adequate indicator of glycemic control in patients with Cushing's syndrome.

PubMed

Kitamura, Tetsuhiro; Otsuki, Michio; Tamada, Daisuke; Tabuchi, Yukiko; Mukai, Kosuke; Morita, Shinya; Kasayama, Soji; Bando, Yukihiro; Shimomura, Iichiro; Koga, Masafumi

2014-12-01

We recently reported that glycated albumin (GA) in patients with Cushing's syndrome is low. In the present study, we examined whether serum albumin (SA)-adjusted GA (SAaGA) is an adequate indicator of glycemic control in patients with Cushing's syndrome. We studied 26 patients with Cushing's syndrome (13 patients without diabetes and 13 patients with diabetes). Twenty six non-diabetic subjects and 26 patients with type 2 diabetes mellitus matched for age, sex and BMI were used as the controls. SAaGA was calculated using the regression formula between SA and GA in non-diabetic patients with Cushing's syndrome and non-diabetic subjects. SA showed a significant correlation with GA in non-diabetic patients with Cushing's syndrome and non-diabetic subjects. GA, but not SAaGA, in non-diabetic patients with Cushing's syndrome was significantly lower than that in the non-diabetic controls. Furthermore, the GA/HbA1c ratio, but not the SAaGA/HbA1c ratio, in diabetic patients with Cushing's syndrome was significantly lower than that in the diabetic controls. The measured GA in the patients with Cushing's syndrome was significantly lower than the estimated GA, but there was no difference between SAaGA and the estimated GA. The present findings suggest that SAaGA is an adequate indicator of the glycemic control in patients with Cushing's syndrome. Copyright © 2014 The Canadian Society of Clinical Chemists. Published by Elsevier Inc. All rights reserved.

GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids

NASA Astrophysics Data System (ADS)

Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

2016-02-01

Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g -GaN ) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g -GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g -GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g -GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g -GaN are preserved when g -GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g -GaN , is found to be an excellent substrate for growing g -GaN . Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g -GaN , and they can display electronic and optical properties that can be controlled by the number of g -GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g -GaN layers.

Piezo-Phototronic Effect Controlled Dual-Channel Visible light Communication (PVLC) Using InGaN/GaN Multiquantum Well Nanopillars.

PubMed

Du, Chunhua; Jiang, Chunyan; Zuo, Peng; Huang, Xin; Pu, Xiong; Zhao, Zhenfu; Zhou, Yongli; Li, Linxuan; Chen, Hong; Hu, Weiguo; Wang, Zhong Lin

2015-12-02

Visible light communication (VLC) simultaneously provides illumination and communication via light emitting diodes (LEDs). Keeping a low bit error rate is essential to communication quality, and holding a stable brightness level is pivotal for illumination function. For the first time, a piezo-phototronic effect controlled visible light communication (PVLC) system based on InGaN/GaN multiquantum wells nanopillars is demonstrated, in which the information is coded by mechanical straining. This approach of force coding is also instrumental to avoid LED blinks, which has less impact on illumination and is much safer to eyes than electrical on/off VLC. The two-channel transmission mode of the system here shows great superiority in error self-validation and error self-elimination in comparison to VLC. This two-channel PVLC system provides a suitable way to carry out noncontact, reliable communication under complex circumstances. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

PubMed

Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; von Molnár, Stephan; Xiong, Peng

2013-04-10

Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Health expenditures among high-risk patients after gastric bypass and matched controls.

PubMed

Maciejewski, Matthew L; Livingston, Edward H; Smith, Valerie A; Kahwati, Leila C; Henderson, William G; Arterburn, David E

2012-07-01

To determine whether bariatric surgery is associated with reduced health care expenditures in a multisite cohort of predominantly older male patients with a substantial disease burden. Retrospective cohort study of bariatric surgery. Outpatient, inpatient, and overall health care expenditures within Department of Veterans Affairs (VA) medical centers were examined via generalized estimating equations in the propensity-matched cohorts. Bariatric surgery programs in VA medical centers. Eight hundred forty-seven veterans who were propensity matched to 847 nonsurgical control subjects from the same 12 VA medical centers. Bariatric surgical procedures. Health expenditures through December 2006. Outpatient, inpatient, and total expenditures trended higher for bariatric surgical cases in the 3 years leading up to the procedure and then converged back to the lower expenditure levels of nonsurgical controls in the 3 years after the procedure. Based on analyses of a cohort of predominantly older men, bariatric surgery does not appear to be associated with reduced health care expenditures 3 years after the procedure.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

NASA Astrophysics Data System (ADS)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

PubMed

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Activation and evaluation of GaN photocathodes

NASA Astrophysics Data System (ADS)

Qian, Yunsheng; Chang, Benkang; Qiao, Jiangliang; Zhang, Yijun; Fu, Rongguo; Qiu, Yafeng

2009-09-01

Gallium Nitride (GaN) photocathodes are potentially attractive as UV detective materials and electron sources. Based on the activation and evaluation system for GaAs photocathode, which consists of ultra-high vacuum (UHV) activation chamber, multi-information measurement system, X-ray photoelectron spectroscopy (XPS), and ultraviolet ray photoelectron spectroscopy (UPS), the control and measurement system for the activation of UV photocathodes was developed. The developed system, which consists of Xenon lamp, monochromator with scanner, signal-processing module, power control unit of Cs and O source, A/D adapter, digital I/O card, computer and software, can control the activation of GaN photocathodes and measure on-line the spectral response curves of GaN photocathodes. GaN materials on sapphire substrate were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) with p-type Mg doping. The GaN materials were activated by Cs-O. The spectral response and quantum efficiency (QE) were measured and calculated. The experiment results are discussed.

Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

NASA Astrophysics Data System (ADS)

Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

2018-06-01

In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

77 FR 16264 - Manufacturer of Controlled Substances, Notice of Registration; Noramco Inc. (GA)

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-20

..., Notice of Registration; Noramco Inc. (GA) By Notice dated November 21, 2011, and published in the Federal... application by renewal to the Drug Enforcement Administration (DEA) to be registered as a bulk manufacturer of the following basic classes of controlled substances: Drug Schedule Codeine-N-oxide (9053) I...

Continuation of comprehensive quality control of the itG 68Ge/68Ga generator and production of 68Ga-DOTATOC and 68Ga-PSMA-HBED-CC for clinical research studies.

PubMed

Amor-Coarasa, Alejandro; Kelly, James M; Gruca, Monika; Nikolopoulou, Anastasia; Vallabhajosula, Shankar; Babich, John W

2017-10-01

Performance of a second itG 68 Ge/ 68 Ga generator system and production of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were tested over one year as an accompaniment to a previously published study (J Nucl Med. 2016;57:1402-1405). Performance of a 1951MBq 68 Ge/ 68 Ga generator was characterized and the eluate used for preparation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC. Weekly elution profiles of 68 Ga elution yield and 68 Ge breakthrough were determined. 68 Ga elution yields averaged 82% (61.8-98.4%) and 68 Ge breakthrough averaged 0.002% (0.0007% to 0.004%). The radiochemical purities of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were determined by HPLC analysis to be >98% and specific activity was 12.6 and 42GBq/μmol, respectively. 68 Ge contamination in the product was under the detection limit (0.00001%). Final sterile, pyrogen-free formulation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC in physiologic saline with 5%-7% ethanol was achieved. Performance of a 68 Ge/ 68 Ga generator was studied over one year with satisfactory results. The generator eluate was used to synthesize 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC on a routine basis in high purity. Copyright © 2017. Published by Elsevier Inc.

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Yao; National Institute for Materials Science, Tsukuba, Ibaraki 305-0044; Sun, Huabin

2015-05-15

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, whichmore » influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.« less

Interface conductance modal analysis of lattice matched InGaAs/InP

NASA Astrophysics Data System (ADS)

Gordiz, Kiarash; Henry, Asegun

2016-05-01

We studied the heat conduction at InGaAs/InP interfaces and found that the total value of interface conductance was quite high ˜830 MW m-2 K-1. The modal contributions to the thermal interface conductance (TIC) were then investigated to determine the mode responsible. Using the recently developed interface conductance modal analysis method, we showed that more than 70% of the TIC arises from extended modes in the system. The lattice dynamics calculations across the interface revealed that, unlike any other interfaces previously studied, the different classes of vibration around the interface of InGaAs/InP naturally segregate into distinct regions with respect to frequency. In addition, interestingly, the entire region of frequency overlap between the sides of the interface is occupied by extended modes, whereby the two materials vibrate together with a single frequency. We also mapped the correlations between modes, which showed that the contribution by extended modes to the TIC primarily arises from coupling to the modes that have the same frequencies of vibration (i.e., autocorrelations). Moreover, interfacial modes despite their low population still contribute more than 6% to interfacial thermal transport. The analysis sheds light on the nature of heat conduction by different classes of vibration that exist in interfacial systems, which has technological relevance to applications such as thermophotovoltaics and optoelectronics.

Orientation independence of heterojunction-band offsets at GaAs-AlAs heterointerfaces characterized by x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Hirakawa, K.; Hashimoto, Y.; Ikoma, T.

1990-12-01

We systematically studied the orientation and the growth sequence dependence of the valence-band offset ΔEv at the lattice-matched common anion GaAs-AlAs interfaces. High quality GaAs-AlAs heterojunctions were carefully grown on GaAs substrates with three major orientations, namely, (100), (110), and (111)B. The core level energy distance ΔECL between Ga 3d and Al 2p levels was measured by in situ x-ray photoemission spectroscopy. ΔECL is found to be independent of the substrate orientation and the growth sequence, which clearly indicates the face independence of ΔEv. This result suggests that the band lineup at lattice-matched isovalent semiconductor heterojunctions is determined by the bulk properties of the constituent materials. ΔEv is determined to be 0.44 ± 0.05 eV.

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darbandi, A.; Watkins, S. P., E-mail: simonw@sfu.ca

Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor-liquid-solid method

NASA Astrophysics Data System (ADS)

Kawaguchi, Kenichi; Takahashi, Tsuyoshi; Okamoto, Naoya; Sato, Masaru

2018-02-01

p-GaAsSb/n-InAs type-II nanowire (NW) diodes were fabricated using the position-controlled vapor-liquid-solid growth method. InAs and GaAsSb NW segments were grown vertically on GaAs(111)B substrates with the assistance of Au catalysts. Transmission electron microscopy-energy-dispersive X-ray spectroscopy analysis revealed that the GaAsSb segments have an Sb content of 40%, which is sufficient to form a tunnel heterostructure. Scanning capacitance microscope images clearly indicated the formation of a p-n junction in the NWs. Backward diode characteristics, that is, current flow toward negative bias originating from a tunnel current and current suppression toward positive bias by a heterobarrier, were demonstrated.

Association of the 5-HT2A receptor gene promoter polymorphism-1438G/A with anorexia nervosa and psychopathological traits in the Chinese Han population: A preliminary study.

PubMed

Kang, Qing; Chen, Jue; Yu, Shunying; Yuan, Aihua; Zhang, Yanxia; Zhang, Ran; Jiang, Wenhui; Zhang, Chen; Zhang, Haiyin; Zhang, Mingdao; Xiao, Zeping

2017-09-01

The aim of the study was to explore the possible role of the 5-HT 2A -1438G/A polymorphism in the susceptibility to anorexia nervosa (AN) in the Chinese Han population. The -1438G/A polymorphism of 249 female AN patients, 228 matched healthy controls, and 198 trios was genotyped using SNaP shot assay. Psychopathological traits of eating-disordered behaviors in AN subjects were examined using the Chinese version of the Eating Disorder Examination Questionnaire. Neither the case-control analysis nor the transmission disequilibrium test revealed significant associations between the -1438G/A polymorphism and AN (P > .05). However, AA homozygote patients with AN had lower weight and shape concern scores of the EDE-Q6.0 than those of GA heterozygotes (P < .05). Our findings suggested that female AN patients with 5-HT 2A -1438AA genotype may be characterized by less severe eating-disordered psychopathological traits in the Chinese Han population. © 2017 John Wiley & Sons Australia, Ltd.

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

2015-01-19

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

Degenerative changes in adolescent spines: a comparison of motocross racers and age-matched controls.

PubMed

Daniels, David J; Luo, T David; Puffer, Ross; McIntosh, Amy L; Larson, A Noelle; Wetjen, Nicholas M; Clarke, Michelle J

2015-03-01

Motocross racing is a popular sport; however, its impact on the growing/developing pediatric spine is unknown. Using a retrospective cohort model, the authors compared the degree of advanced degenerative findings in young motocross racers with findings in age-matched controls. Patients who had been treated for motocross-related injury at the authors' institution between 2000 and 2007 and had been under 18 years of age at the time of injury and had undergone plain radiographic or CT examination of any spinal region were eligible for inclusion. Imaging was reviewed in a blinded fashion by 3 physicians for degenerative findings, including endplate abnormalities, loss of vertebral body height, wedging, and malalignment. Acute pathological segments were excluded. Spine radiographs from age-matched controls were similarly reviewed and the findings were compared. The motocross cohort consisted of 29 riders (mean age 14.7 years; 82% male); the control cohort consisted of 45 adolescents (mean age 14.3 years; 71% male). In the cervical spine, the motocross cohort had 55 abnormalities in 203 segments (average 1.90 abnormalities/patient) compared with 20 abnormalities in 213 segments in the controls (average 0.65/patient) (p = 0.006, Student t-test). In the thoracic spine, the motocross riders had 51 abnormalities in 292 segments (average 2.04 abnormalities/patient) compared with 25 abnormalities in 299 segments in the controls (average 1.00/patient) (p = 0.045). In the lumbar spine, the motocross cohort had 11 abnormalities in 123 segments (average 0.44 abnormalities/patient) compared with 15 abnormalities in 150 segments in the controls (average 0.50/patient) (p = 0.197). Increased degenerative changes in the cervical and thoracic spine were identified in adolescent motocross racers compared with age-matched controls. The long-term consequences of these changes are unknown; however, athletes and parents should be counseled accordingly about participation in motocross

Maternal obesity in singleton versus twin gestations: a population-based matched case-control study.

PubMed

Lucovnik, Miha; Blickstein, Isaac; Verdenik, Ivan; Trojner-Bregar, Andreja; Tul, Natasa

2015-04-01

To examine the impact of pre-pregnancy obesity on adverse outcomes in twin compared to singleton pregnancies. Dichorionic twin gestations with maternal body mass index >30 were matched to three singleton controls. Both obese groups were matched (1:3) with non-obese controls. Rates of preeclampsia, gestational diabetes, cesarean section, and preterm birth were compared. One hundred eighty-nine dichorionic twin pregnancies in obese mothers were matched to 567 twin pregnancies in non-obese mothers, and to 567 singleton pregnancies in obese mothers. The latter were matched to 1701 non-obese mothers with singletons. Preeclampsia was more common in obese mothers with both twins and singletons (odds ratio (OR) 3.95, 95% confidence interval (CI) 2.18-7.16 and OR 6.53, 95% CI 3.75-11.4, respectively) as was gestational diabetes (OR 4.35, 95% CI 2.18-8.69; OR 5.53 95% CI 3.60-8.50). Obese mothers with singletons were more likely to deliver abdominally, but the cesarean rates were obesity independent in twins. Obese mothers were more likely to deliver at < 34 weeks in both twin and singleton groups (OR 1.65, 95% CI 1.10-2.48, and OR 2.41, 95% CI 1.21-4.77, respectively). Obesity-attributable adverse outcomes are lower in twins compared to singletons. Obesity increases the risk of preterm birth regardless of plurality.

Matching Automatic Gain Control Across Devices in Bimodal Cochlear Implant Users.

PubMed

Veugen, Lidwien C E; Chalupper, Josef; Snik, Ad F M; Opstal, A John van; Mens, Lucas H M

2016-01-01

The purpose of this study was to improve bimodal benefit in listeners using a cochlear implant (CI) and a hearing aid (HA) in contralateral ears, by matching the time constants and the number of compression channels of the automatic gain control (AGC) of the HA to the CI. Equivalent AGC was hypothesized to support a balanced loudness for dynamically changing signals like speech and improve bimodal benefit for speech understanding in quiet and with noise presented from the side(s) at 90 degree. Fifteen subjects participated in the study, all using the same Advanced Bionics Harmony CI processor and HA (Phonak Naida S IX UP). In a 3-visit crossover design with 4 weeks between sessions, performance was measured using a HA with a standard AGC (syllabic multichannel compression with 1 ms attack time and 50 ms release time) or an AGC that was adjusted to match that of the CI processor (dual AGC broadband compression, 3 and 240 msec attack time, 80 and 1500 msec release time). In all devices, the AGC was activated above the threshold of 63 dB SPL. The authors balanced loudness across the devices for soft and loud input sounds in 3 frequency bands (0 to 548, 548 to 1000, and >1000 Hz). Speech understanding was tested in free field in quiet and in noise for three spatial speaker configurations, with target speech always presented from the front. Single-talker noise was either presented from the CI side or the HA side, or uncorrelated stationary speech-weighted noise or single-talker noise was presented from both sides. Questionnaires were administered to assess differences in perception between the two bimodal fittings. Significant bimodal benefit over the CI alone was only found for the AGC-matched HA for the speech tests with single-talker noise. Compared with the standard HA, matched AGC characteristics significantly improved speech understanding in single-talker noise by 1.9 dB when noise was presented from the HA side. AGC matching increased bimodal benefit

Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

NASA Astrophysics Data System (ADS)

Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

2011-12-01

A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettner, T., E-mail: Thomas.Stettner@wsi.tum.de, E-mail: Gregor.Koblmueller@wsi.tum.de, E-mail: Jonathan.Finley@wsi.tum.de; Zimmermann, P.; Loitsch, B.

2016-01-04

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm{sup 2} for the multiple QW NW laser. This confirms that themore » individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.« less

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-12-01

A theoretical framework that provides a quantitative relationship between point defect formation energies and growth process parameters is presented. It enables systematic point defect reduction by chemical potential control in metalorganic chemical vapor deposition (MOCVD) of III-nitrides. Experimental corroboration is provided by a case study of C incorporation in GaN. The theoretical model is shown to be successful in providing quantitative predictions of CN defect incorporation in GaN as a function of growth parameters and provides valuable insights into boundary phases and other impurity chemical reactions. The metal supersaturation is found to be the primary factor in determining the chemical potential of III/N and consequently incorporation or formation of point defects which involves exchange of III or N atoms with the reservoir. The framework is general and may be extended to other defect systems in (Al)GaN. The utility of equilibrium formalism typically employed in density functional theory in predicting defect incorporation in non-equilibrium and high temperature MOCVD growth is confirmed. Furthermore, the proposed theoretical framework may be used to determine optimal growth conditions to achieve minimum compensation within any given constraints such as growth rate, crystal quality, and other practical system limitations.

Abuse and deliberate self-poisoning in women: a matched case-control study.

PubMed

Coll, X; Law, F; Tobías, A; Hawton, K; Tomàs, J

2001-10-01

Controlled studies have shown deliberate self-harm to be more common in abused populations, but no controlled studies have shown abuse to be more common in self-harming populations. This is the first controlled study to determine whether abuse experiences (sexual, physical, and psychological) occurred more commonly in women who take overdoses than in controls. The design was a matched (1:1) case-control study set in a district general hospital in England. The subjects were 36 women admitted following deliberate self-poisoning. They were matched with the next non-overdose admission to the same hospital on six variables (sex, age, ethnicity, social class, marital status, and geographical locality). The main outcome measures used were modified versions of standardized self-report questionnaires of sexual, physical, and psychological abuse, together with measures of parenting style and general psychopathology. Women who had taken an overdose were more likely (odds ratio 15.0, 95% confidence interval 2.0 to 113.6) to have been sexually abused, and somewhat more likely to have been psychologically (1.02, 1.00 to 1.05) but not physically abused. They also had higher measures of psychopathology (GHQ-30: 1.19, 1.07 to 1.31), were more likely to have been abused at a younger age, exposed to the "affectionless control" style of parenting by their mothers, and to have harmed themselves in other ways. The management of women presenting to hospital after self-poisoning should include assessment of abuse experiences, and instigation of appropriate treatment in those with significant sequelae of abuse.

Understanding the crystallization mechanism of delafossite CuGaO2 for controlled hydrothermal synthesis of nanoparticles and nanoplates.

PubMed

Yu, Mingzhe; Draskovic, Thomas I; Wu, Yiying

2014-06-02

The delafossite CuGaO2 is an important p-type transparent conducting oxide for both fundamental science and industrial applications. An emerging application is for p-type dye-sensitized solar cells. Obtaining delafossite CuGaO2 nanoparticles is challenging but desirable for efficient dye loading. In this work, the phase formation and crystal growth mechanism of delafossite CuGaO2 under low-temperature (<250 °C) hydrothermal conditions are systematically studied. The stabilization of Cu(I) cations in aqueous solution and the controlling of the hydrolysis of Ga(III) species are two crucial factors that determine the phase formation. The oriented attachment (OA) growth is proposed as the crystal growth mechanism to explain the formation of large CuGaO2 nanoplates. Importantly, by suppressing this OA process, delafossite CuGaO2 nanoparticles that are 20 nm in size were successfully synthesized for the first time. Moreover, considering the structural and chemical similarities between the Cu-based delafossite series compounds, the understanding of the hydrothermal chemistry and crystallization mechanism of CuGaO2 should also benefit syntheses of other similar delafossites such as CuAlO2 and CuScO2.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

PubMed Central

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-01-01

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. PMID:22314357

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

PubMed

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Theoretical study of optical properties of anti phase domains in GaP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tea, E., E-mail: etea.contact@gmail.com; FOTON INSA-Rennes; Vidal, J.

III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute nitride alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter,more » we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.« less

A controllable robust multiferroic GaTeCl monolayer with colossal 2D ferroelectricity and desirable multifunctionality.

PubMed

Zhang, Shi-Hao; Liu, Bang-Gui

2018-03-29

We propose through first-principles investigation that the GaTeCl monolayer is an excellent two-dimensional (2D) multiferroic with giant mechanical anisotropy. The calculated phonon spectrum, molecular dynamic simulations, and elastic moduli confirm its dynamic and mechanical stability, and our cleavage energy analysis shows that exfoliating one GaTeCl monolayer from the existing GaTeCl bulk is feasible. The calculated in-plane ferroelectric polarization reaches 578 pC m-1. The energy barriers per formula unit of the ferroelastic 90° rotational and ferroelectric reversal transitions are 476 meV and 754 meV, respectively, being the greatest in the 2D multiferroics family so far. Importantly, on the other hand, a tensile stress of 4.7 N m-1 perpendicular to the polarization can drive the polarization to rotate by 90°. These can make the GaTeCl monolayer have not only robust ferroelasticity and ferroelectricity but also easy mechanical controllability. Furthermore, the GaTeCl monolayer has giant piezoelectricity and optical second harmonic generation, especially in the range of visible light, and a tensile stress of 0.3 N m-1 along the polarization can make the indirect gap transit to the direct gap. These interesting mechanical, electronic, and optical properties of the GaTeCl monolayer show its great potential in high-performance multi-functional applications.

A Randomized Controlled Trial of Employer Matching of Employees' Monetary Contributions to Deposit Contracts to Promote Weight Loss.

PubMed

Kullgren, Jeffrey T; Troxel, Andrea B; Loewenstein, George; Norton, Laurie A; Gatto, Dana; Tao, Yuanyuan; Zhu, Jingsan; Schofield, Heather; Shea, Judy A; Asch, David A; Pellathy, Thomas; Driggers, Jay; Volpp, Kevin G

2016-07-01

To test whether employer matching of employees' monetary contributions increases employees' (1) participation in deposit contracts to promote weight loss and (2) weight loss. A 36-week randomized trial. Large employer in the northeast United States. One hundred thirty-two obese employees. Over 24 weeks, participants were asked to lose 24 pounds and randomized to monthly weigh-ins or daily weigh-ins with monthly opportunities to deposit $1 to $3 per day that was not matched, matched 1:1, or matched 2:1. Deposits and matched funds were returned to participants for each day they were below their goal weight. Rates of making ≥1 deposit, weight loss at 24 weeks (primary outcome), and 36 weeks. Deposit rates were compared using χ(2) tests. Weight loss was compared using t tests. Among participants eligible to make deposits, 29% made ≥1 deposit and matching did not increase participation. At 24 weeks, control participants gained an average of 1.0 pound, whereas 1:1 match participants lost an average of 5.3 pounds (P = .005). After 36 weeks, control participants gained an average of 2.1 pounds, whereas no match participants lost an average of 5.1 pounds (P = .008). Participation in deposit contracts to promote weight loss was low, and matching deposits did not increase participation. For deposit contracts to impact population health, ongoing participation will need to be higher. © The Author(s) 2016.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Z.; Cardwell, D.; Sasikumar, A.

2016-04-28

The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on protonmore » irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.« less

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

NASA Astrophysics Data System (ADS)

Gogova, D.; Kasic, A.; Larsson, H.; Hemmingsson, C.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Dobos, L.; Pécz, B.; Gibart, P.; Beaumont, B.

2004-07-01

Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy (HVPE) growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-μm-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopy images show the dislocation density of the free-standing HVPE-GaN to be ˜2.5×107 cm-2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8×1015 cm-3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 (3.4712) eV and 3.4721 (3.4718) eV for the Ga- (N-) polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E1(TO) phonon mode position measured at 558.52 cm-1 (Ga face) by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.

The role of matched controls in building an evidence base for hospital-avoidance schemes: a retrospective evaluation.

PubMed

Steventon, Adam; Bardsley, Martin; Billings, John; Georghiou, Theo; Lewis, Geraint Hywel

2012-08-01

To test whether two hospital-avoidance interventions altered rates of hospital use: "intermediate care" and "integrated care teams." Linked administrative data for England covering the period 2004 to 2009. This study was commissioned after the interventions had been in place for several years. We developed a method based on retrospective analysis of person-level data comparing health care use of participants with that of prognostically matched controls. Individuals were linked to administrative datasets through a trusted intermediary and a unique patient identifier. Participants who received the intermediate care intervention showed higher rates of unscheduled hospital admission than matched controls, whereas recipients of the integrated care team intervention showed no difference. Both intervention groups showed higher rates of mortality than did their matched controls. These are potentially powerful techniques for assessing impacts on hospital activity. Neither intervention reduced admission rates. Although our analysis of hospital utilization controlled for a wide range of observable characteristics, the difference in mortality rates suggests that some residual confounding is likely. Evaluation is constrained when performed retrospectively, and careful interpretation is needed. © Health Research and Educational Trust.

A matched case-control study of convenience store robbery risk factors.

PubMed

Hendricks, S A; Landsittel, D P; Amandus, H E; Malcan, J; Bell, J

1999-11-01

Convenience store clerks have been shown to be at high risk for assault and homicide, mostly owing to robbery or robbery attempts. Although the literature consistently indicates that at least some environmental designs are effective deterrents of robbery, the significance of individual interventions and policies has differed across past studies. To address these issues, a matched case-control study of 400 convenience store robberies in three metropolitan areas of Virginia was conducted. Conditional logistic regression was implemented to evaluate the significance of various environmental designs and other factors possibly related to convenience store robbery. Findings indicate that numerous characteristics of the surrounding environment and population were significantly associated with convenience store robbery. Results also showed that, on a univariate level, most crime prevention factors were significantly associated with a lower risk for robbery. Using a forward selection process, a multivariate model, which included cash handling policy, bullet-resistant shielding, and numerous characteristics of the surrounding area and population, was identified. This study addressed numerous limitations of the previous literature by prospectively collecting extensive data on a large sample of diverse convenience stores and directly addressing the current theory on the robbers' selection of a target store through a matched case-control design.

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

NASA Astrophysics Data System (ADS)

Kamath, K.; Bhattacharya, P.; Singh, J.

1997-05-01

Multispectral semiconductor laser arrays on single chip is demonstrated by molecular beam epitaxial (MBE) growth of {In0.2Ga0.8As}/{GaAs} quantum well lasers on GaAs (1 0 0) substrates patterned by dry etching. No regrowth is needed for simple edge emitting lasers. It was observed that the laser characteristics are not degraded by the patterned growth. The shift in the emission wavelength obtained by this method can be controlled by varying the width of the pre-patterned ridges as well as by selecting the regions with different number of vertical sidewalls on both sides. We have also shown that multispectral vertical cavity surface emitting laser (VCSEL) arrays can be made by this technique with a single regrowth.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

PubMed

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Alcohol Habits in Patients with Long-Term Musculoskeletal Pain: Comparison with a Matched Control Group from the General Population

ERIC Educational Resources Information Center

Thelin Bronner, Kerstin Birgitta; Wennberg, Peter; Kallmen, Hakan; Schult, Marie-Louise Birgitta

2012-01-01

This prospective study aimed to describe alcohol habits in patients with chronic pain compared with those in a matched control group from the general Swedish population. In total, 100 consecutive patients enrolled were matched against 100 individuals in a control group on the basis of age and sex. Alcohol habits were measured using the Alcohol Use…

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, B. Z.; Wang, X. L.; Wang, X. Y.; Guo, L. C.; Wang, X. H.; Xiao, H. L.; Liu, H. X.

2007-02-01

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

InGaAs focal plane array developments at III-V Lab

NASA Astrophysics Data System (ADS)

Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

2012-06-01

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

NASA Technical Reports Server (NTRS)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

NASA Astrophysics Data System (ADS)

Ryczko, K.; Sek, G.; Sitarek, P.; Mika, A.; Misiewicz, J.; Langer, F.; Höfling, S.; Forchel, A.; Kamp, M.

2013-06-01

Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 mo in QWs with 1.2% N and 0.15 mo for the case of larger N content of 2.2%.

Impact of bariatric surgery on clinical depression. Interrupted time series study with matched controls.

PubMed

Booth, Helen; Khan, Omar; Prevost, A Toby; Reddy, Marcus; Charlton, Judith; Gulliford, Martin C

2015-03-15

Obesity is associated with depression. This study aimed to evaluate whether clinical depression is reduced after bariatric surgery (BS). Obese adults who received BS procedures from 2002 to 2014 were sampled from the UK Clinical Practice Research Datalink. An interrupted time series design, with matched controls, was conducted from three years before, to a maximum of seven years after surgery. Controls were matched for body mass index (BMI), age, gender and year of procedure. Clinical depression was defined as a medical diagnosis recorded in year, or an antidepressant prescribed in year to a participant ever diagnosed with depression. Adjusted odds ratios (AOR) were estimated. There were 3045 participants (mean age 45.9; mean BMI 44.0kg/m(2)) who received BS, including laparoscopic gastric banding in 1297 (43%), gastric bypass in 1265 (42%), sleeve gastrectomy in 477 (16%) and six undefined. Before surgery, 36% of BS participants, and 21% of controls, had clinical depression; between-group AOR, 2.02, 95%CI 1.75-2.33, P<0.001. In the second post-operative year 32% had depression; AOR, compared to time without surgery, 0.83 (0.76-0.90, P<0.001). By the seventh year, the prevalence of depression increased to 37%; AOR 0.99 (0.76-1.29, P=0.959). Despite matching there were differences in depression between BS and control patients, representing the highly selective nature of BS. Depression is frequent among individuals selected to undergo bariatric surgery. Bariatric surgery may be associated with a modest reduction in clinical depression over the initial post-operative years but this is not maintained. Copyright © 2014 The Authors. Published by Elsevier B.V. All rights reserved.

Fabrication of high reflectivity nanoporous distributed Bragg reflectors by controlled electrochemical etching of GaN

NASA Astrophysics Data System (ADS)

Lee, Seung-Min; Kang, Jin-Ho; Lee, June Key; Ryu, Sang-Wan

2016-09-01

The nanoporous medium is a valuable feature of optical devices because of its variable optical refractive index with porosity. One important application is in a GaN-based vertical cavity surface emitting laser having a distributed Bragg reflector (DBR) composed of alternating nanoporous and bulk GaNs. However, optimization of the fabrication process for high reflectivity DBRs having wellcontrolled high reflection bands has not been studied yet. We used electrochemical etching to study the fabrication process of a nanoporous GaN DBR and analyzed the relationship between the morphology and optical reflectivity. Several electrolytes were examined for the formation of the optimized nanoporous structure. A highly reflective DBRs having reflectivity of ~100% were obtained over a wide wavelength range of 450-750 nm. Porosification of semiconductors into nanoporous layers could provide a high reflectivity DBR due to controlled index-contrast, which would be advantages for the construction of a high-Q optical cavity.

Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

NASA Astrophysics Data System (ADS)

Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

2016-03-01

The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

General control of transition-metal-doped GaN nanowire growth: toward understanding the mechanism of dopant incorporation.

PubMed

Stamplecoskie, Kevin G; Ju, Ling; Farvid, Shokouh S; Radovanovic, Pavle V

2008-09-01

We report the first synthesis and characterization of cobalt- and chromium-doped GaN nanowires (NWs), and compare them to manganese-doped GaN NWs. Samples were synthesized by chemical vapor deposition method, using cobalt(II) chloride and chromium(III) chloride as dopant precursors. For all three impurity dopants hexagonal, triangular, and rectangular NWs were observed. The fraction of NWs having a particular morphology depends on the initial concentration of the dopant precursors. While all three dopant ions have the identical effect on GaN NW growth and faceting, Co and Cr are incorporated at much lower concentrations than Mn. These findings suggest that the doping mechanism involves binding of the transition-metal intermediates to specific NW facets, inhibiting their growth and causing a change in the NW morphology. We discuss the doping concentrations of Mn, Co, and Cr in terms of differences in their crystal-field stabilization energies (DeltaCFSE) in their gas-phase intermediates and in substitutionally doped GaN NWs. Using iron(III) chloride and cobalt(II) acetate as dopant precursors we show that the doping concentration dependence on DeltaCFSE allows for the prediction of achievable doping concentrations for different dopant ions in GaN NWs, and for a rational choice of a suitable dopant-ion precursor. This work further demonstrates a general and rational control of GaN NW growth using transition-metal impurities.

Associations Between Physical Fitness Indices and Working Memory in Breast Cancer Survivors and Age-Matched Controls

PubMed Central

Mackenzie, Michael J.; Zuniga, Krystle E.; Raine, Lauren B.; Awick, Elizabeth A.; Hillman, Charles H.; Kramer, Arthur F.

2016-01-01

Abstract Background: This study examined the effects of cardiorespiratory fitness, heart rate recovery, and physical activity on working memory in breast cancer survivors and age-matched controls. Method: Using a case-control design, 32 women who had received a breast cancer diagnosis and completed primary treatment within the past 36-months (11 radiation only; 21 chemotherapy) and 30 age-matched women with no previous cancer diagnosis completed a n-back continuous performance task commonly used as an assessment of working memory. In addition, cardiorespiratory fitness and heart rate recovery were measured during a submaximal graded exercise test and physical activity was measured using 7-days of accelerometer monitoring. Results: Breast cancer survivors who had received chemotherapy had poorer heart rate recovery (p = .010) and engaged in less physical activity than women who had received radiation only (p = .004) or non-cancer controls (p = .029). Cancer treatment (radiation; chemotherapy) predicted differences in reaction times on the 1-back working memory task (p = .029). However, more rapid heart rate recovery predicted shorter reaction times on the 1-back task in the age-matched control group (p = .002). All participants with greater cardiorespiratory fitness displayed greater accuracy independent of disease status on the 1-back task (p = .017). No significant group differences in reaction times were observed for 2-back target trials between breast cancer survivors and controls. However, greater total physical activity predicted shorter reaction times in breast cancer survivors (radiation, chemotherapy) on the 2-back task (p = .014). In addition, all participants who exhibited more rapid heart rate recovery demonstrated better greater accuracy regardless of disease status (p = .013). Conclusion: These findings support differences in physical activty participation, heart rate recovery, and 1- and 2-back working memory reaction

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

NASA Astrophysics Data System (ADS)

Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.

2004-03-01

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

(68)Ga-DOTATATE PET in juvenile angiofibroma.

PubMed

Gronkiewicz, Zuzanna; Kukwa, Wojciech; Krolicki, Leszek; Cyran-Chlebicka, Agata; Pawlak, Dariusz; Stankiewicz, Czeslaw; Krzeski, Antoni; Górnicka, Barbara; Wolosz, Dominika; Kunikowska, Jolanta

2016-06-01

As somatostatin receptors (SSTRs) may be overexpressed in rapidly growing vessels, the aim of this study was the analysis of in vivo and in vitro SSTR2A expression in juvenile angiofibroma (JA). A group of six male adolescents with a diagnosis of primary, recurrent/residual JA was enrolled in the study. All patients underwent (68)Ga-DOTATATE PET/computed tomography (CT) followed by immunohistochemical staining for SSTR expression. (68)Ga-DOTATATE PET/CT showed accumulation in areas matching the pathologic tissue in the nasopharynx of all patients studied with SUVmax of 5.1 ± 0.9 (ranging from 3.6 to 6.4). In all cases, the immunohistochemical examination showed a presence of SSTR2A with a high staining index. In vitro SSTR2A cytoplasm expression was found to be high in all tumor specimens. However, the uptake of (68)Ga-DOTATATE was weak in the PET/CT studies. We postulate that the intracellular localization of the SSTR2A in JA may cause this discrepancy.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

PubMed Central

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

Effect of anaesthesia type on postoperative mortality and morbidities: a matched analysis of the NSQIP database.

PubMed

Saied, N N; Helwani, M A; Weavind, L M; Shi, Y; Shotwell, M S; Pandharipande, P P

2017-01-01

The anaesthetic technique may influence clinical outcomes, but inherent confounding and small effect sizes makes this challenging to study. We hypothesized that regional anaesthesia (RA) is associated with higher survival and fewer postoperative organ dysfunctions when compared with general anaesthesia (GA). We matched surgical procedures and type of anaesthesia using the US National Surgical Quality Improvement database, in which 264,421 received GA and 64,119 received RA. Procedures were matched according to Current Procedural Terminology (CPT) and ASA physical status classification. Our primary outcome was 30-day postoperative mortality and secondary outcomes were hospital length of stay, and postoperative organ system dysfunction. After matching, multiple regression analysis was used to examine associations between anaesthetic type and outcomes, adjusting for covariates. After matching and adjusting for covariates, type of anaesthesia did not significantly impact 30-day mortality. RA was significantly associated with increased likelihood of early discharge (HR 1.09; P< 0.001), 47% lower odds of intraoperative complications, and 24% lower odds of respiratory complications. RA was also associated with 16% lower odds of developing deep vein thrombosis and 15% lower odds of developing any one postoperative complication (OR 0.85; P < 0.001). There was no evidence of an effect of anaesthesia technique on postoperative MI, stroke, renal complications, pulmonary embolism or peripheral nerve injury. After adjusting for clinical and patient characteristic confounders, RA was associated with significantly lower odds of several postoperative complications, decreased hospital length of stay, but not mortality when compared with GA. © The Author 2016. Published by Oxford University Press on behalf of the British Journal of Anaesthesia. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

2016-05-01

We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.

PubMed

Hou, Wen Chi; Hong, Franklin Chau-Nan

2009-02-04

This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 degrees C.

In-situ x-ray studies of compositional control during synthesis of LaGaO 3 by radio frequency-magnetron sputtering

DOE PAGES

Highland, Matthew J.; Fong, Dillon D.; Ju, Guangxu; ...

2015-08-28

In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO 3 epitaxial thin films by 90° off-axis RF-magnetron sputtering. We compared films deposited from a single LaGaO 3 source with those prepared by alternating deposition from separate La 2O 3 and Ga 2O 3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. Our results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques canmore » be utilized to achieve stoichiometric control in ultrathin films.« less

The role of N-H complexes in the control of localized center recombination in hydrogenated GaInNAs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Whiteside, Vincent R.; Fukuda, Miwa; Estes, Nicholas J.; Wang, Bin; Brown, Collin R.; Hossain, Khalid; Golding, Terry D.; Leroux, Mathieu; Al Khalfioui, Mohamed; Tischler, Joseph G.; Ellis, Chase T.; Glaser, Evan R.; Sellers, Ian R.

2017-04-01

A significant improvement in the quality of dilute nitrides has recently led to the ability to reveal depletion widths in excess of 1 μm at 1 eV [1]. The real viability of dilute nitrides for PV has been recently demonstrated with the reporting of a record efficiency of 43.5% from a 4J MJSC including GaInNAs(Sb) [2]. Despite the progress made, these materials remain poorly understood and work continues to improve their lifetime and reproducibility. We have investigated the possibility of improving the functionality of GaInNAs using hydrogenation to selectively passivate mid-gap defects, while preserving the substitutional nitrogen. Temperature dependent photoluminescence measurements of the intrinsic region of a GaInNAs p-i-n solar cell show a classic "s-shape" associated with localization prior to hydrogenation. No sign of this "s-shape" is evident after hydrogenation, despite the retention of substitutional nitrogen as evidenced by the band absorption of 1 eV. The absence of an "s-shape" at low-temperature in hydrogenated GaInNAs is rather curious since, even in high quality nitrides this behavior is due to the emission of isoelectronic centers created via N-As substitution [3]. The potential origins of this behavior will be discussed. The promise of this process for GaInNAs solar cells was demonstrated by a three-fold improvement in the performance of a hydrogenated device with respect to an as-grown reference [4]. [1] "Wide-depletion width GaInNAs solar cells by thermal annealing," I. R. Sellers, W-S. Tan, K. Smith, S. Hooper, S. Day and M. Kauer, Applied Physics Letters 99, 151111 (2011) [2] "43.5% efficient lattice matched solar cells," M. Wiemer, V. Sabnis, and H. Yuen, Proc. SPIE 8108, 810804 (2011) [3]"Probing the nature of carrier localization in GaInNAs, epilayers using optical methods," T. Ysai, B. Barman, T. Scarce, G. Lindberg, M. Fukuda, V. R. Whiteside, J. C. Keay, M. B. Johnson, I. R. Sellers, M. Al Khalfioui, M. Leroux, B. A. Weinstein and A

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

1991-01-01

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.; Wu, Y.

1988-01-01

A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

PubMed

Zhu, Tongtong; Liu, Yingjun; Ding, Tao; Fu, Wai Yuen; Jarman, John; Ren, Christopher Xiang; Kumar, R Vasant; Oliver, Rachel A

2017-03-27

Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11-20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

Comparison of brachial artery vasoreactivity in elite power athletes and age-matched controls.

PubMed

Welsch, Michael A; Blalock, Paul; Credeur, Daniel P; Parish, Tracie R

2013-01-01

Elite endurance athletes typically have larger arteries contributing to greater skeletal muscle blood flow, oxygen and nutrient delivery and improved physical performance. Few studies have examined structural and functional properties of arteries in power athletes. To compare the size and vasoreactivity of the brachial artery of elite power athletes to age-matched controls. It was hypothesized brachial artery diameters of athletes would be larger, have less vasodilation in response to cuff occlusion, but more constriction after a cold pressor test than age-matched controls. Eight elite power athletes (age = 23 ± 2 years) and ten controls (age = 22 ± 1 yrs) were studied. High-resolution ultrasonography was used to assess brachial artery diameters at rest and following 5 minutes of forearm occlusion (Brachial Artery Flow Mediated Dilation = BAFMD) and a cold pressor test (CPT). Basic fitness measures included a handgrip test and 3-minute step test. Brachial arteries of athletes were larger (Athletes 5.39 ± 1.51 vs. 3.73 ± 0.71 mm, p<0.05), had greater vasodilatory (BAFMD%: Athletes: 8.21 ± 1.78 vs. 5.69 ± 1.56%) and constrictor (CPT %: Athletes: -2.95 ± 1.07 vs. -1.20 ± 0.48%) responses, compared to controls. Vascular operating range (VOR = Peak dilation+Peak Constriction) was also greater in athletes (VOR: Athletes: 0.55 ± 0.15 vs. 0.25 ± 0.18 mm, p<0.05). Athletes had superior handgrip strength (Athletes: 55.92 ± 17.06 vs. 36.77 ± 17.06 kg, p<0.05) but similar heart rate responses at peak (Athletes: 123 ± 16 vs. 130 ± 25 bpm, p>0.05) and 1 minute recovery (Athletes: 88 ± 21 vs. 98 ± 26 bpm, p>0.05) following the step test. Elite power athletes have larger brachial arteries, and greater vasoreactivity (greater vasodilatory and constrictor responses) than age-matched controls, contributing to a significantly greater VOR. These data extend the existence of an 'athlete's artery' as previously shown for elite endurance athletes to elite power athletes

Female fibromyalgia patients: lower resting metabolic rates than matched healthy controls.

PubMed

Lowe, John C; Yellin, Jackie; Honeyman-Lowe, Gina

2006-07-01

Many features of fibromyalgia and hypothyroidism are virtually the same, and thyroid hormone treatment trials have reduced or eliminated fibromyalgia symptoms. These findings led the authors to test the hypothesis that fibromyalgia patients are hypometabolic compared to matched controls. Resting metabolic rate (RMR) was measured by indirect calorimetry and body composition by bioelectrical impedance for 15 fibromyalgia patients and 15 healthy matched controls. Measured resting metabolic rate (mRMR) was compared to percentages of predicted RMR (pRMR) by fat-free weight (FFW) (Sterling-Passmore: SP) and by sex, age, height, and weight (Harris-Benedict: HB). Patients had a lower mRMR (4,306.31+/-1077.66 kJ vs 5,411.59+/-695.95 kJ, p=0.0028) and lower percentages of pRMRs (SP: -28.42+/-15.82% vs -6.83+/-12.55%, p<0.0001. HB: -29.20+/-17.43% vs -9.13+/-9.51%, p=0.0008). Whereas FFW, age, weight, and body mass index (BMI) best accounted for variability in controls' RMRs, age and fat weight (FW) did for patients. In the patient group, TSH level accounted for 28% of the variance in pain distribution, and free T3 (FT3) accounted for 30% of the variance in pressure-pain threshold. Patients had lower mRMR and percentages of pRMRs. The lower RMRs were not due to calorie restriction or low FFW. Patients' normal FFW argues against low physical activity as the mechanism. TSH, FT4, and FT3 levels did not correlate with RMRs in either group. This does not rule out inadequate thyroid hormone regulation because studies show these laboratory values do not reliably predict RMR.

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.

PubMed

Shen, J; Song, Y; Lee, M L; Cha, J J

2014-11-21

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems.

Bayesian adjustment for measurement error in continuous exposures in an individually matched case-control study.

PubMed

Espino-Hernandez, Gabriela; Gustafson, Paul; Burstyn, Igor

2011-05-14

In epidemiological studies explanatory variables are frequently subject to measurement error. The aim of this paper is to develop a Bayesian method to correct for measurement error in multiple continuous exposures in individually matched case-control studies. This is a topic that has not been widely investigated. The new method is illustrated using data from an individually matched case-control study of the association between thyroid hormone levels during pregnancy and exposure to perfluorinated acids. The objective of the motivating study was to examine the risk of maternal hypothyroxinemia due to exposure to three perfluorinated acids measured on a continuous scale. Results from the proposed method are compared with those obtained from a naive analysis. Using a Bayesian approach, the developed method considers a classical measurement error model for the exposures, as well as the conditional logistic regression likelihood as the disease model, together with a random-effect exposure model. Proper and diffuse prior distributions are assigned, and results from a quality control experiment are used to estimate the perfluorinated acids' measurement error variability. As a result, posterior distributions and 95% credible intervals of the odds ratios are computed. A sensitivity analysis of method's performance in this particular application with different measurement error variability was performed. The proposed Bayesian method to correct for measurement error is feasible and can be implemented using statistical software. For the study on perfluorinated acids, a comparison of the inferences which are corrected for measurement error to those which ignore it indicates that little adjustment is manifested for the level of measurement error actually exhibited in the exposures. Nevertheless, a sensitivity analysis shows that more substantial adjustments arise if larger measurement errors are assumed. In individually matched case-control studies, the use of conditional

Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers

DOE PAGES

Li, Xufan; Dong, Jichen; Idrobo, Juan C.; ...

2016-12-07

Understanding the atomistic mechanisms governing the growth of two-dimensional (2D) materials is of great importance in guiding the synthesis of wafer-sized, single-crystalline, high-quality 2D crystals and heterostructures. Etching, in many cases regarded as the reverse process of material growth, has been used to study the growth kinetics of graphene. In this paper, we explore a growth–etching–regrowth process of monolayer GaSe crystals, including single-crystalline triangles and irregularly shaped domains formed by merged triangles. We show that the etching begins at a slow rate, creating triangular, truncated triangular, or hexagonally shaped holes that eventually evolve to exclusively triangles that are rotated 60°more » with respect to the crystalline orientation of the monolayer triangular crystals. The regrowth occurs much faster than etching, reversibly filling the etched holes and then enlarging the size of the monolayer crystals. A theoretical model developed based on kinetic Wulff construction (KWC) theory and density functional theory (DFT) calculations accurately describe the observed morphology evolution of the monolayer GaSe crystals and etched holes during the growth and etching processes, showing that they are governed by the probability of atom attachment/detachment to/from different types of edges with different formation energies of nucleus/dents mediated by chemical potential difference Δμ between Ga and Se. Finally, our growth–etching–regrowth study provides not only guidance to understand the growth mechanisms of 2D binary crystals but also a potential method for the synthesis of large, shape-controllable, high-quality single-crystalline 2D crystals and their lateral heterostructures.« less

Controlled growth of ordered nanopore arrays in GaN.

PubMed

Wildeson, Isaac H; Ewoldt, David A; Colby, Robert; Stach, Eric A; Sands, Timothy D

2011-02-09

High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.

Sister chromatid exchange in children of Seventh-Day Adventists and matched controls.

PubMed

Hermansen, R; Waksvik, H; Fønnebø, V

1991-03-01

The low risk of cancer in Seventh-Day Adventists (SDAs) has been suggested to be due to genetic selection. To investigate this claim we examined the sister chromatid exchange (SCE) frequency in peripheral blood lymphocytes in 16 SDA children in Tromsø, all aged 0.5-8 years and 16 controls matched for sex and age. In 12 of 16 pairs, the SDA children had a lower SCE frequency than the controls. The mean difference was 4.06 (95% confidence interval -17.02-8.89, P = 0.51). There was no sex difference, and no correlation between age and SCE frequency. The genetic starting point with regard to SCE frequency seems to be the same for SDA children and controls.

Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jiamin; Hono, K., E-mail: kazuhiro.hono@nims.go.jp; Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047

2015-05-07

We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation,more » which made it a good candidate for CPP-GMR device.« less

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

NASA Astrophysics Data System (ADS)

Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

2015-03-01

In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-06-20

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

NASA Astrophysics Data System (ADS)

Uliel, Y.; Cohen-Elias, D.; Sicron, N.; Grimberg, I.; Snapi, N.; Paltiel, Y.; Katz, M.

2017-08-01

Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 μm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 μm in mesa devices. D∗ was 1.7 ×1010cm ·√{Hz } /W at 2 μm.

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Z. L., E-mail: zhilaifang@hotmail.com; Li, Q. F.; Shen, X. Y.

2014-01-28

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhancedmore » interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.« less

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

NASA Astrophysics Data System (ADS)

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

2016-03-01

InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

Face matching impairment in developmental prosopagnosia.

PubMed

White, David; Rivolta, Davide; Burton, A Mike; Al-Janabi, Shahd; Palermo, Romina

2017-02-01

Developmental prosopagnosia (DP) is commonly referred to as 'face blindness', a term that implies a perceptual basis to the condition. However, DP presents as a deficit in face recognition and is diagnosed using memory-based tasks. Here, we test face identification ability in six people with DP, who are severely impaired on face memory tasks, using tasks that do not rely on memory. First, we compared DP to control participants on a standardized test of unfamiliar face matching using facial images taken on the same day and under standardized studio conditions (Glasgow Face Matching Test; GFMT). Scores for DP participants did not differ from normative accuracy scores on the GFMT. Second, we tested face matching performance on a test created using images that were sourced from the Internet and so varied substantially due to changes in viewing conditions and in a person's appearance (Local Heroes Test; LHT). DP participants showed significantly poorer matching accuracy on the LHT than control participants, for both unfamiliar and familiar face matching. Interestingly, this deficit is specific to 'match' trials, suggesting that people with DP may have particular difficulty in matching images of the same person that contain natural day-to-day variations in appearance. We discuss these results in the broader context of individual differences in face matching ability.

New power sharing control for inverter-dominated microgrid based on impedance match concept.

PubMed

Gu, Herong; Wang, Deyu; Shen, Hong; Zhao, Wei; Guo, Xiaoqiang

2013-01-01

Power flow control is one of the most important issues for operating the inverter-dominated autonomous microgrid. A technical challenge is how to achieve the accurate active/reactive power sharing of inverters. P-F and Q-V droop control schemes have been widely used for power sharing in the past decades. But they suffer from the poor power sharing in the presence of unequal line impedance. In order to solve the problem, a comprehensive analysis of the power droop control is presented, and a new droop control based on the impedance match concept is proposed in this paper. In addition, the design guidelines of control coefficients and virtual impedance are provided. Finally, the performance evaluation is carried out, and the evaluation results verify the effectiveness of the proposed method.

New Power Sharing Control for Inverter-Dominated Microgrid Based on Impedance Match Concept

PubMed Central

Gu, Herong; Wang, Deyu; Shen, Hong; Zhao, Wei; Guo, Xiaoqiang

2013-01-01

Power flow control is one of the most important issues for operating the inverter-dominated autonomous microgrid. A technical challenge is how to achieve the accurate active/reactive power sharing of inverters. P-F and Q-V droop control schemes have been widely used for power sharing in the past decades. But they suffer from the poor power sharing in the presence of unequal line impedance. In order to solve the problem, a comprehensive analysis of the power droop control is presented, and a new droop control based on the impedance match concept is proposed in this paper. In addition, the design guidelines of control coefficients and virtual impedance are provided. Finally, the performance evaluation is carried out, and the evaluation results verify the effectiveness of the proposed method. PMID:24453910

Planar regions of GaAs (001) prepared by Ga droplet motion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Changxi, E-mail: changxi.zheng@monash.edu; Tang, Wen-Xin; Jesson, David E., E-mail: jessonDE@cardiff.ac.uk

2016-07-15

The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs controllable Ga droplet motion to create planar trail regions during Langmuir evaporation. Low-energy electron microscopy/diffraction techniques are applied to monitor the droplet motion and characterize the morphology and the surface reconstruction. It is found that the planar regions exhibit atomic flatness at the level of a high-quality buffer layer.

Improving excellence in scoliosis rehabilitation: a controlled study of matched pairs.

PubMed

Weiss, H-R; Klein, R

2006-01-01

Physiotherapy programmes so far mainly address the lateral deformity of scoliosis, a few aim at the correction of rotation and only very few address the sagittal profile. Meanwhile, there is evidence that correction forces applied in the sagittal plane are also able to correct the scoliotic deformity in the coronal and frontal planes. So it should be possible to improve excellence in scoliosis rehabilitation by the implementation of exercises to correct the sagittal deformity in scoliosis patients. An exercise programme (physio-logic exercises) aiming at a physiologic sagittal profile was developed to add to the programme applied at the centre or to replace certain exercises or exercising positions. To test the hypothesis that physio-logic exercises improve the outcome of Scoliosis Intensive Rehabilitation (SIR), the following study design was chosen: Prospective controlled trial of pairs of patients with idiopathic scoliosis matched by sex, age, Cobb angle and curve pattern. There were 18 patients in the treatment group (SIR + physio-logic exercises) and 18 patients in the control group (SIR only), all in matched pairs. Average Cobb angle in the treatment group was 34.5 degrees (SD 7.8) Cobb angle in the control group was 31.6 degrees (SD 5.8). Age in the treatment group was at average 15.3 years (SD 1.1) and in the control group 14.7 years (SD 1.3). Thirteen of the 18 patients in either group had a brace. Outcome parameter: average lateral deviation (mm), average surface rotation ( degrees ) and maximum Kyphosis angle ( degrees ) as evaluated with the help of surface topography (Formetric-system). Lateral deviation (mm) decreased significantly after the performance of the physio-logic programme and highly significantly in the physio-logic ADL posture; however, it was not significant after completion of the whole rehabilitation programme (2.3 vs 0.3 mm in the controls). Surface rotation improved at average 1.2 degrees in the treatment group and 0.8 degrees in the

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

PubMed

He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

2017-12-13

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures

NASA Astrophysics Data System (ADS)

Peyre, H.; Alsina, F.; Juillaguet, S.; Massone, E.; Camassel, J.; Pascual, J.; Glew, R. W.

1993-01-01

InGaAs quantum wells (QWs), with either InP or InGaAsP barriers, are increasingly considered for optoelectronic device applications. Nevertheless, because interdiffusion across the interfaces (intermixing) results in unwanted modifications of the nominal properties, in-situ controls of the well composition (to be ultimately done during the processing sequences) are of fundamental interest. In this work, we have used a single quantum well of InGaAs/InGaAsP as a prototype structure and we investigate the respective advantage (and/or disadvantage) of both PL and Raman tools as non-destructive techniques. Provided careful analyses are done, we find that both determinations are in satisfactory agreement and constitute alternative but non-equivalent techniques for in-line characterization.

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

Phase separation and defect formation in stable, metastable, and unstable GaInAsSb alloys for infrared applications

NASA Astrophysics Data System (ADS)

Yildirim, Asli

GaInAsSb is a promising material for mid-infrared devices such as lasers and detectors because it is a direct band gap material with large radiative coefficient and a cut-off wavelength that can be varied across the mid-infrared (from 1.7 to 4.9 mum) while remaining lattice matched to GaSb. On the other hand, the potential of the alloy is hampered by predicted ranges of concentration where the constituents of the alloy become immiscible when the crystal is grown near thermodynamic equilibrium at typical growth temperatures. There have been efforts to extend the wavelength of GaInAsSb alloys through such techniques as digital alloy growth and non-equilibrium growth, but most of the compositional range has for a long time been inaccessible due to immiscibility challenges. Theoretical studies also supported the existence of thermodynamic immiscibility gaps for non-equilibrium growth conditions. Lower growth temperatures lead to shorther adatom diffusion length. While a shorter adatom diffusion length suppresses phase separation, too short an adatom length is associated with increased defect formation and eventually loss of crystallinity. On the other hand, hotter growth temperatures move epitaxial growth closer to thermodynamic equilib- rium conditions, and will eventually cause phase separation to occur. In this study thick 2 um; bulk GaInAsSb layers lattice-matched to GaSb substrates were grown across the entire (lattice-matched) compositional range at low growth temperatures (450° C), including the immiscibility region, when grown under non-equilibrium conditions with MBE. High quality epitaxial layers were grown for all compositions, as evidenced by smooth morphology (atomic force microscopy), high structural quality (X-ray diffraction), low alloy fluctuactions (electron dispersive spectroscopy in cross sectioned samples), and bright room temperature photoluminescence. Because initial theoretical efforts have suggessted that lattice strain can influence layer

Methods for analyzing matched designs with double controls: excess risk is easily estimated and misinterpreted when evaluating traffic deaths.

PubMed

Redelmeier, Donald A; Tibshirani, Robert J

2018-06-01

To demonstrate analytic approaches for matched studies where two controls are linked to each case and events are accumulating counts rather than binary outcomes. A secondary intent is to clarify the distinction between total risk and excess risk (unmatched vs. matched perspectives). We review past research testing whether elections can lead to increased traffic risks. The results are reinterpreted by analyzing both the total count of individuals in fatal crashes and the excess count of individuals in fatal crashes, each time accounting for the matched double controls. Overall, 1,546 individuals were in fatal crashes on the 10 election days (average = 155/d), and 2,593 individuals were in fatal crashes on the 20 control days (average = 130/d). Poisson regression of total counts yielded a relative risk of 1.19 (95% confidence interval: 1.12-1.27). Poisson regression of excess counts yielded a relative risk of 3.22 (95% confidence interval: 2.72-3.80). The discrepancy between analyses of total counts and excess counts replicated with alternative statistical models and was visualized in graphical displays. Available approaches provide methods for analyzing count data in matched designs with double controls and help clarify the distinction between increases in total risk and increases in excess risk. Copyright © 2018 Elsevier Inc. All rights reserved.

SEMTAP (Serpentine End Match TApe program): The Easy Way to Program Your Numerically Controlled Router for the Production of SEM Joints

Treesearch

Ronald E. Coleman

1977-01-01

SEMTAP (Serpentine End Match TApe Program) is an easy and inexpensive method of programing a numerically controlled router for the manufacture of SEM (Serpentine End Matching) joints. The SEMTAP computer program allows the user to issue commands that will accurately direct a numerically controlled router along any SEM path. The user need not be a computer programer to...

Cervical Spinal Cord Dimensions and Clinical Outcomes in Adults with Klippel-Feil Syndrome: A Comparison with Matched Controls

PubMed Central

Cho, Woojin; Lee, Dong-Ho; Auerbach, Joshua D.; Sehn, Jennifer K.; Nabb, Colin E.; Riew, K. Daniel

2014-01-01

Study Design Retrospective case–control study. Objectives To confirm the fact that spinal cord dimensions are smaller in adults with Klippel-Feil syndrome (KFS) than in pediatric patients with KFS and to compare the clinical characteristics and outcomes of neurologic complications in patients with KFS with matched controls. Methods We performed an independent 1:2 case–control retrospective radiographic and chart review of a consecutive series of adults with KFS who underwent surgical intervention. The control group consisted of consecutive non-KFS surgical patients. Patients were matched in 1:2 case–control manner. Their charts were reviewed and the clinical characteristics were compared. Axial T2-weighted magnetic resonance imaging (MRI) was used to measure the anteroposterior and mediolateral axial spinal cord and spinal canal at the operative levels and measurements were compared. Results A total of 22 patients with KFS and 44 controls were identified. The KFS group had a tendency of more myeloradiculopathy, and the control group had a tendency toward more radiculopathy. Both tendencies, however, were not significantly different. MRIs of 10 patients from the KFS group and 22 controls were available. There was no difference in the area of both spinal cord and canal at the operative levels. Conclusion Contrary to the finding in previous reports on pediatric patients, there were no differences between KFS and well-matched control groups in terms of age of onset, presentation, revision rate, complication rate, surgical outcome, and cross-sectional spinal cord and canal dimensions at the operative level. PMID:25396101

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

PubMed

Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

2015-01-14

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

Thickness-dependent magneto-optical effects in hole-doped GaS and GaSe multilayers: a first-principles study

NASA Astrophysics Data System (ADS)

Li, Fei; Zhou, Xiaodong; Feng, Wanxiang; Fu, Botao; Yao, Yugui

2018-04-01

Recently, two-dimensional (2D) GaS and GaSe nanosheets were successfully fabricated and the measured electronic, mechanical, and optoelectronic properties are excellent. Here, using the first-principles density functional theory, we investigate the magnetic, optical, and magneto-optical (MO) Kerr and Faraday effects in hole-doped GaS and GaSe multilayers. GaS and GaSe monolayers (MLs) manifest ferromagnetic ground states by introducing even a small amount of hole doping, whereas the magnetism in GaS and GaSe multilayers are significantly different under hole doping. Our results show that ferromagnetic states can be easily established in GaS bilayers and trilayers under proper hole doping, however, most of GaSe multilayers are more favorable to nonmagnetic states. The magnetic moments in GaS multilayers are weakened remarkably with the increasing of thin film thickness and are negligible more than three MLs. This leads to the thickness dependence of MO Kerr and Faraday effects. Furthermore, the MO effects strongly depend on the doping concentration and therefore are electrically controllable by adjusting the number of holes via gate voltage. The substrate effects on the MO properties are also discussed. Combining the unique MO and other interesting physical properties make GaS and GaSe a superior 2D material platform for semiconductor MO and spintronic nanodevices.

Electrical control of the spin-orbit coupling in GaAs from single to double and triple wells

NASA Astrophysics Data System (ADS)

Wang, W.; Li, X. M.; Fu, J. Y.

2015-12-01

We consider a realistic GaAs/Al0.3Ga0.7As well, inside which there are either one or two additional AlxGa1 - xAs barriers embedded, with two occupied electron subbands ν = 1, 2. By varying the Al content x in the AlxGa1 - xAs layer, we investigate the electrical control of the spin-orbit (SO) interaction, i.e., intrasubband Rashba (Dresselhaus) αν (βν) and intersubband Rashba (Dresselhaus) η (Γ), in the course of the transition of our system from single to double and triple wells. At x = 0 (single well), the scenario of SO terms is usual, e.g., α1 and α2 have the same sign and both change almost linearly as functions of an external gate voltage Vg. In contrast, when x away from zero and only one AlxGa1 - xAs barrier embedded (double well), α1 and α2 tend to have opposite signs, and α2 first increases with Vg, while peaks at some point depending on x. For a larger value of x, α2 increases with Vg more abruptly till it peaks. As opposed to α1 and α2, the intrasubband Dresselhaus terms βν have a relatively weak dependence on Vg, and β1 and β2 become close as x increases. As for the intersubband SO terms, at x = 0, the Rashba coupling η remains essentially constant, while the Dresselhaus Γ changes almost linearly with Vg. When x is nonzero, on the one hand, both η and Γ have a sensitive dependence on Vg near the symmetric configuration; on the other hand, right at the symmetric configuration η exhibits the highest while Γ vanishes. In the case of our system having two additional AlxGa1 - xAs barriers (triple well), we find that the gate dependence of SO terms becomes more smooth and βν becomes more stronger. The persistent-spin-helix symmetry of the two subbands is also discussed. These results are expected to be important for a broad control of the SO interaction in semiconductor nanostructures.

Structures, bonding, and reaction chemistry of the neutral organogallium(I) compounds (GaAr)n(n = 1 or 2) (Ar = terphenyl or related ligand): an experimental investigation of Ga-Ga multiple bonding.

PubMed

Hardman, Ned J; Wright, Robert J; Phillips, Andrew D; Power, Philip P

2003-03-05

with sodium readily gave Na(2)[Ar*GaGaAr*] (13) and Na(2)(Ar'GaGaAr') (14). The former species 13 had been synthesized previously by reduction of GaAr*Cl(2) with sodium and was described as having a Ga-Ga triple bond because of the short Ga-Ga distance and the electronic relationship between [Ar*GaGaAr*](2-) and the corresponding neutral group 14 alkyne analogues. Compound 14 has a similar structure featuring a trans-bent CGaGaC core, bridged by sodiums which were also coordinated to the flanking aryl rings of the Ar' ligands. The Ga-Ga bond length was found to be 2.347(1) A, which is slightly (ca. 0.02 A) longer than that reported for 13. Reaction of Ga[N(Dipp)C(Me)](2)CH, 15 (i.e., GaN(wedge)NDipp(2)), which is sterically related to 1, 4, and 6, with Fe(CO)(5) yielded Dipp(2)N(wedge)NGaFe(CO)(4) (16), whose Ga-Fe bond is slightly longer than that observed in 11. Reaction of the less bulky LiAr"(Ar"= C(6)H(3)-2,6-Mes(2)) with "GaI" afforded the new paramagnetic cluster Ga(11)Ar(4)" (17). The ready dissociation of 1, 4, and 6 in solution, the long Ga-Ga distance in 6, and the chemistry of these compounds showed that the Ga-Ga bonds are significantly weaker than single bonds. The reduction of 1 and 6 with sodium to give 13 and 14 supplies two electrons to the di-gallium unit to generate a single bond (in addition to the weak interaction in the neutral precursor) with retention of the trans-bent geometry. It was concluded that the stability of 13 and 14 depends on the matching size of the sodium ion, and the presence of Na-Ga and Na-Ar interactions that stabilize their Na(2)Ga(2) core structures.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum wells

NASA Astrophysics Data System (ADS)

Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Takeda, Yoshikazu

2013-05-01

GaN/InxGa1-xN/GaN single quantum wells (SQWs) have been grown on c-plane GaN/sapphire substrates using MOVPE system. PL (photoluminescence) and AFM (atomic force microscope) measurements demonstrate good quality of after-growth thermal-annealed SQWs. In situ XRD (X-ray diffraction), XRR (X-ray reflectivity), and X-ray CTR (crystal truncation rod) scattering measurements were successfully conducted on the SQWs under the NH3+N2 ambient at 1103 K. The analysis results of the XRR and the X-ray CTR spectra at 1103 K and at 300 K on the same sample matched well. It demonstrated that In0.09Ga0.91N SQW structure with several ML (monolayer) InGaN thicknesses was successfully investigated using the XRR and CTR scattering measurements at 1103 K.

Effect of telephone health coaching (Birmingham OwnHealth) on hospital use and associated costs: cohort study with matched controls.

PubMed

Steventon, Adam; Tunkel, Sarah; Blunt, Ian; Bardsley, Martin

2013-08-06

To test the effect of a telephone health coaching service (Birmingham OwnHealth) on hospital use and associated costs. Analysis of person level administrative data. Difference-in-difference analysis was done relative to matched controls. Community based intervention operating in a large English city with industry. 2698 patients recruited from local general practices before 2009 with heart failure, coronary heart disease, diabetes, or chronic obstructive pulmonary disease; and a history of inpatient or outpatient hospital use. These individuals were matched on a 1:1 basis to control patients from similar areas of England with respect to demographics, diagnoses of health conditions, previous hospital use, and a predictive risk score. Telephone health coaching involved a personalised care plan and a series of outbound calls usually scheduled monthly. Median length of time enrolled on the service was 25.5 months. Control participants received usual healthcare in their areas, which did not include telephone health coaching. Number of emergency hospital admissions per head over 12 months after enrolment. Secondary metrics calculated over 12 months were: hospital bed days, elective hospital admissions, outpatient attendances, and secondary care costs. In relation to diagnoses of health conditions and other baseline variables, matched controls and intervention patients were similar before the date of enrolment. After this point, emergency admissions increased more quickly among intervention participants than matched controls (difference 0.05 admissions per head, 95% confidence interval 0.00 to 0.09, P=0.046). Outpatient attendances also increased more quickly in the intervention group (difference 0.37 attendances per head, 0.16 to 0.58, P<0.001), as did secondary care costs (difference £175 per head, £22 to £328, P=0.025). Checks showed that we were unlikely to have missed reductions in emergency admissions because of unobserved differences between intervention and

Transanal pullthrough for Hirschsprung disease: matched case-control comparison of Soave and Swenson techniques.

PubMed

Nasr, Ahmed; Haricharan, Ramanath N; Gamarnik, Julie; Langer, Jacob C

2014-05-01

Both the Swenson and the Soave procedures have been adapted to a transanal approach. The purpose of this study was to compare outcomes following the transanal Swenson and Soave procedures using a matched case control analysis. A retrospective chart review was performed to identify all transanal Soave and Swenson pullthroughs done at 2 tertiary care children's hospitals between 2000 and 2010. Patients were matched for gestational age, mean weight at time of the operation, level of aganglionosis, and presence of co-morbidities. Student's t-test and chi-squared analysis were performed. Fifty-four patients (Soave 27, Swenson 27) had adequate data for matching and analysis. Mean follow-up was 4±1.6 years and 3.2 ±2.7 years for the Soave and Swenson groups, respectively. No significant differences in mean operating time (Soave:191±55, Swenson:167±61 min, p=0.6), overall hospital stay (6±4 vs 7.8±5 days, p=0.7), and number with intra-operative complications (3 vs 4, p=1.0), post-operative obstructive symptoms (6 vs 9, p=0.5), enterocolitis episodes (4 vs 4, p=1.0), or fecal incontinence (0 vs 2, p=0.4) were noted. After controlling for potential confounders, there were no significant differences in the short and intermediate term outcome between transanal Soave and transanal Swenson pullthrough procedures. Copyright © 2014 Elsevier Inc. All rights reserved.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.

PubMed

Broderick, Christopher A; Jin, Shirong; Marko, Igor P; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L; Stolz, Wolfgang; Rorison, Judy M; O'Reilly, Eoin P; Volz, Kerstin; Sweeney, Stephen J

2017-04-19

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs 1-x Bi x /GaN y As 1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs 0.967 Bi 0.033 /GaN 0.062 As 0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

NASA Astrophysics Data System (ADS)

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O'Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-04-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1-xBix/GaNyAs1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

44Sc-PSMA-617 for radiotheragnostics in tandem with 177Lu-PSMA-617-preclinical investigations in comparison with 68Ga-PSMA-11 and 68Ga-PSMA-617.

PubMed

Umbricht, Christoph A; Benešová, Martina; Schmid, Raffaella M; Türler, Andreas; Schibli, Roger; van der Meulen, Nicholas P; Müller, Cristina

2017-12-01

The targeting of the prostate-specific membrane antigen (PSMA) is of particular interest for radiotheragnostic purposes of prostate cancer. Radiolabeled PSMA-617, a 1,4,7,10-tetraazacyclododecane-N,N',N'',N'''-tetraacetic acid (DOTA)-functionalized PSMA ligand, revealed favorable kinetics with high tumor uptake, enabling its successful application for PET imaging ( 68 Ga) and radionuclide therapy ( 177 Lu) in the clinics. In this study, PSMA-617 was labeled with cyclotron-produced 44 Sc (T 1/2  = 4.04 h) and investigated preclinically for its use as a diagnostic match to 177 Lu-PSMA-617. 44 Sc was produced at the research cyclotron at PSI by irradiation of enriched 44 Ca targets, followed by chromatographic separation. 44 Sc-PSMA-617 was prepared under standard labeling conditions at elevated temperature resulting in a radiochemical purity of >97% at a specific activity of up to 10 MBq/nmol. 44 Sc-PSMA-617 was evaluated in vitro and compared to the 177 Lu- and 68 Ga-labeled match, as well as 68 Ga-PSMA-11 using PSMA-positive PC-3 PIP and PSMA-negative PC-3 flu prostate cancer cells. In these experiments it revealed similar in vitro properties to that of 177 Lu- and 68 Ga-labeled PSMA-617. Moreover, 44 Sc-PSMA-617 bound specifically to PSMA-expressing PC-3 PIP tumor cells, while unspecific binding to PC-3 flu cells was not observed. The radioligands were investigated with regard to their in vivo properties in PC-3 PIP/flu tumor-bearing mice. 44 Sc-PSMA-617 showed high tumor uptake and a fast renal excretion. The overall tissue distribution of 44 Sc-PSMA-617 resembled that of 177 Lu-PSMA-617 most closely, while the 68 Ga-labeled ligands, in particular 68 Ga-PSMA-11, showed different distribution kinetics. 44 Sc-PSMA-617 enabled distinct visualization of PC-3 PIP tumor xenografts shortly after injection, with increasing tumor-to-background contrast over time while unspecific uptake in the PC-3 flu tumors was not observed. The in vitro characteristics and in vivo

Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.

PubMed

Wenisch, J; Gould, C; Ebel, L; Storz, J; Pappert, K; Schmidt, M J; Kumpf, C; Schmidt, G; Brunner, K; Molenkamp, L W

2007-08-17

We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.

Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

NASA Astrophysics Data System (ADS)

Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

1999-05-01

We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

Comparison of MRI-defined back muscles volume between patients with ankylosing spondylitis and control patients with chronic back pain: age and spinopelvic alignment matched study.

PubMed

Bok, Doo Hee; Kim, Jihye; Kim, Tae-Hwan

2017-02-01

To compare MRI-defined back muscle volume between AS patients and age, and spinopelvic alignment matched control patients with chronic back pain. 51 male patients with AS were enrolled. Age and spinopelvic alignment matched controls (male) were found among non-AS patients with chronic back pain. After matching procedure, fully matched controls were found in 31 of 51 AS patients (60.8%), who represent AS patients without deformity. However, matched controls were not found in 20 of 51 AS patients (39.2%), who represent AS patients with deformity. MRI parameters of back muscle (paraspinal muscle and psoas muscle) at L4/5 disc level including cross-sectional area (CSA) and fat-free cross-sectional area (FCSA) were compared between AS patients and matched controls. Covariates, including BMI, self-reported physical activity, and the presence of chronic disease, which can influence back muscle volume, were also investigated. There were no statistical differences in age, body mass index, score of back pain (NRS), and spinopelvic alignment, and physical activity between matched AS patients and control patients except for duration of back pain. All MRI parameters for paraspinal muscle volume in matched AS patients (without deformity) were significantly less than those of control patients, and significantly larger than those of non-matched AS patients (with deformity). Body size adjusted MRI parameters (relative CSA and relative FCSA) of paraspinal muscle showed strong correlations with lumbar lordosis and sacral slope. Such relationship between paraspinal muscle and spinopelvic parameters remained significant even after multivariate adjustment. AS patients without deformity already have decreased paraspinal muscle volume compared with age and spinopelvic alignment matched non-AS patients with chronic back pain. Such decrease in paraspinal muscle volume was significantly associated with kyphotic deformity of AS patients even after multivariate adjustment. Although the result

Gibberellins and stem growth in Arabidopsis thaliana. Effects of photoperiod on expression of the GA4 and GA5 loci.

PubMed

Xu, Y L; Gage, D A; Zeevaart, J A

1997-08-01

Arabidopsis thaliana (L.) Heynh. is a quantitative long-day (LD) rosette plant in which stem growth is mediated by gibberellins (CAs). Application of GAs to plants in short-day (SD) conditions resulted in rapid stem elongation and flower formation, with GA4 and GA9 being equally effective, and GA1 showing lower activity. The effects of photoperiod on the levels of endogenous GAs were measured by combined gas chromatography-mass spectrometry with selected ion monitoring. When plants were transferred from SD to LD conditions there was a slight decrease in the level of GA53 and an increase in the levels of C19-GAs, GA9, GA20, GA1, and GA8, indicating that GA 20-oxidase activity is stimulated in LD conditions. Expression of GA5, which encodes GA 20-oxidase, was highest in elongating stems and was correlated with the rate of stem elongation. By contrast, GA4, which encodes 3 beta-hydroxylase, showed low expression in stems and its expression was not correlated with the rate of stem elongation. We conclude that stem elongation in LD conditions is at least in part due to increased expression of GA5, whereas expression of GA4 is not under photoperiodic control.

Sleep bruxism in individuals with and without attrition-type tooth wear: An exploratory matched case-control electromyographic study.

PubMed

Jonsgar, Christine; Hordvik, Paul-Arne; Berge, Morten E; Johansson, Ann-Katrin; Svensson, Peter; Johansson, Anders

2015-12-01

To examine if there is a difference in possible sleep bruxism activity (SB) in subjects with or without attrition-type tooth wear. Sixteen individuals with pronounced attritional-type tooth wear were compared with sex and aged matched controls without tooth wear by means of measurement of electromyographic (EMG) activity during a minimum of four consecutive nights of sleep. Mean age and range for the study- and control- group was 23.7 years (range 19.9-28.5) and 23.6 years (range 20.3-27.9), respectively. There were 11 females and five males in each of the two groups. The attrition group presented incisal/occlusal attrition wear into dentin and matching wear facets between opposing anterior teeth. The controls had negligible signs of incisal/occlusal wear and a minimal number of matching wear facets. The prevalence of both self-reported and partner-reported SB was significantly more common in the attrition group compared to the controls (P=0.04 and P=0.007, respectively). Self-reported morning facial pain was similarly more common in the attrition group (P=0.014). Maximum opening capacity, number of muscles painful to palpation, salivary flow rate and buffering capacity were not significantly different between the groups. Interestingly, none of the measures of jaw muscle EMG activity during sleep, as recorded by the portable EMG equipment, differed significantly between the attrition group and the matched controls (P>0.05). The results from this exploratory study suggest that there is no difference in EMG activity between subjects with and without attrition-type tooth wear. Further research is needed in order to substantiate these preliminary findings. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Phase Equilibrium and Crystal Growth Studies on AgGaSe2 and Related Nonlinear Optical Materials

DTIC Science & Technology

1989-09-01

identify by block number) IELD GROUP SUB-GROUP - "°Silver selenogallate, AgGaSe2, nonlinear optical materials, infrared materials, optical defects 19...materials has unique nonlinear infrared optical properties( 1-4 ) including high nonlinear coefficients, and the ability to be phase matched through a...have a milky appearance in thin section or when viewed with a commercial infrared image converter. Microscopic examination of AgGaSe2 in both reflected

The effect of obesity on inflammatory markers in patients with PCOS: a BMI-matched case-control study.

PubMed

Keskin Kurt, Raziye; Okyay, Ayşe Güler; Hakverdi, Ali Ulvi; Gungoren, Arif; Dolapcioglu, Kenan Serdar; Karateke, Atilla; Dogan, Mustafa Ozcil

2014-08-01

Previous studies have shown increased inflammatory activity in patients with polycystic ovary syndrome (PCOS); however, it remains uncertain whether this increased inflammatory activity is a consequence of the disorder itself or of the accompanying obesity. We therefore aimed to test the inflammatory marker levels in obese and lean patients with PCOS by using two separate control groups with matching body mass index (BMI). A total of 120 women in reproductive age with (n = 62) and without (n = 60) PCOS were recruited for the study. Patients with PCOS were divided into two groups as obese (n = 32) and lean (n = 30) PCOS groups according to BMI. Two BMI-matched control groups were created. Furthermore, high sensitive CRP protein (hsCRP), neutrophils, lymphocytes, white blood cell count (WBC) and neutrophil to lymphocyte ratio (NLR) were evaluated with complete blood count. The hsCRP (5.5 ± 0.8 vs. 3.1 ± 0.7, p < 0.001), neutrophil count (3.8 ± 0.4 vs. 2.9 ± 0.7, p < 0.001), leukocyte count (7.2 ± 1.8 vs. 5.6 ± 1.6, p < 0.001), and NLR (2.6 ± 1.4 vs. 1.5 ± 0.4, p < 0.001) were higher in patients with PCOS compared to the control group while lymphocyte count was lower (1.71 ± 0.65 vs. 1.98 ± 0.39, p = 0.008). Similarly, both obese and lean patients with PCOS had higher levels of hsCRP, neutrophils, leukocytes and NLR ratios compared to BMI-matched controls. The correlation analysis revealed a moderate correlation between NLR and hsCRP (r 0.459, p < 0.001), and between HOMA-IR (r 0.476 p < 0.001) and BMI (r 0.310, p 0.001). Our study results demonstrated that both lean and obese patients with PCOS have increased inflammatory markers compared to BMI-matched control groups indicating that the inflammation seen in PCOS might be related with the presence of the disorder rather than with obesity.

In 0.35Ga 0.65P light-emitting diodes grown by gas-source MBE

NASA Astrophysics Data System (ADS)

Masselink, W. Ted; Zachau, Martin

1993-02-01

This paper describes the growth and optical characteristics of In yGa 1- yP with 0.3< y<0.5, and the LED operation of p-i-n structures in the same materials system. The InGaP is grown using gas-source molecular beam epitaxy (GSMBE). The non-lattice-matched In yGa 1- yP grown on GaAs using GSMBE has a specularly smooth surface morphology through the use of unique strained-layer superlattice (SLS) buffer. We have measured the luminescence, luminescence excitation, and Raman spectra of these undoped films and observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In 0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the In yGa 1- y P system and has lattice mismatch from the GaAs substrate of 1%.

Intersubband energies in strain-compensated InGaN/AlInN quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Seoung-Hwan, E-mail: shpark@cu.ac.kr; Ahn, Doyeol

2016-01-15

Intersubband transition energies in the conduction band for strain-compensated InGaN/AlInN quantum well (QW) structures were investigated as a function of strain based on an effective mass theory with the nonparabolicity taken into account. In the case of an InGaN/AlInN QW structure lattice-matched to GaN, the wavelength is shown to be longer than 1.55 μm. On the other hand, strain-compensated QW structures show that the wavelength of 1.55 μm can be reached even for the QW structure with a relatively small strain of 0.3 %. Hence, the strain-compensated QW structures can be used for telecommunication applications at 1.55 μm with amore » small strain, compared to conventional GaN/AlN QW structure.« less

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

NASA Astrophysics Data System (ADS)

Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes.

PubMed

Du, Chengxiao; Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin

2013-10-21

Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.

Refractive indexes of (Al, Ga, In) as epilayers on InP for optoelectronic applications

NASA Astrophysics Data System (ADS)

Mondry, M. J.; Babic, D. I.; Bowers, J. E.; Coldren, L. A.

1992-06-01

MBE grown bulk and short period superlattices of (Al, Ga, In) As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In) As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model and the model coefficients are given. The resulting expression can be used in the design of wave-guides, modulators, and other optical devices.

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

PubMed

Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

2017-02-08

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Nonpolar InGaN/GaN core–shell single nanowire lasers

DOE PAGES

Li, Changyi; Wright, Jeremy Benjamin; Liu, Sheng; ...

2017-01-24

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reducedmore » active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. Furthermore, the results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.« less

Morphological Control of In x Ga 1–x P Nanocrystals Synthesized in a Nonthermal Plasma

DOE PAGES

Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.; ...

2018-04-09

We explore the growth of InxGa1-xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated by the presence ofmore » both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP1.5 and In0.5Ga0.5P1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

Morphological Control of In xGa 1–xP Nanocrystals Synthesized in a Nonthermal Plasma

DOE PAGES

Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.; ...

2018-04-09

Here, we explore the growth of In xGa 1–xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated bymore » the presence of both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP 1.5 and In 0.5Ga 0.5P 1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

Morphological Control of In xGa 1–xP Nanocrystals Synthesized in a Nonthermal Plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.

Here, we explore the growth of In xGa 1–xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated bymore » the presence of both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP 1.5 and In 0.5Ga 0.5P 1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

Bayes and empirical Bayes methods for reduced rank regression models in matched case-control studies.

PubMed

Satagopan, Jaya M; Sen, Ananda; Zhou, Qin; Lan, Qing; Rothman, Nathaniel; Langseth, Hilde; Engel, Lawrence S

2016-06-01

Matched case-control studies are popular designs used in epidemiology for assessing the effects of exposures on binary traits. Modern studies increasingly enjoy the ability to examine a large number of exposures in a comprehensive manner. However, several risk factors often tend to be related in a nontrivial way, undermining efforts to identify the risk factors using standard analytic methods due to inflated type-I errors and possible masking of effects. Epidemiologists often use data reduction techniques by grouping the prognostic factors using a thematic approach, with themes deriving from biological considerations. We propose shrinkage-type estimators based on Bayesian penalization methods to estimate the effects of the risk factors using these themes. The properties of the estimators are examined using extensive simulations. The methodology is illustrated using data from a matched case-control study of polychlorinated biphenyls in relation to the etiology of non-Hodgkin's lymphoma. © 2015, The International Biometric Society.

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Lattice matched crystalline substrates for cubic nitride semiconductor growth

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2015-02-24

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Magnetic resonance imaging based morphologic evaluation of the pineal gland for suspected pineoblastoma in retinoblastoma patients and age-matched controls.

PubMed

Pham, Thi Thai Hien; Siebert, Eberhard; Asbach, Patrick; Willerding, Gregor; Erb-Eigner, Katharina

2015-12-15

The purpose of this study was to evaluate the morphologic magnetic resonance imaging (MRI) characteristics of the pineal gland in retinoblastoma (Rb) patients without and with pineoblastoma in comparison to age-matched controls to improve early identification of pineoblastomas (trilateral retinoblastoma, TRb). 80 patients with retinoblastoma and 80 age-matched controls who had undergone brain MRI were included in this retrospective institutional review board approved cohort study. Two readers analyzed the following MR characteristics of the pineal gland: signal intensity on T1- and T2-weighted images, enhancement pattern, delineation of the gland, presence of cystic component, size of pineal gland and size of pineal cysts, respectively. A third reader assessed all images for the presence or absence of pineoblastoma. 3 patients were positive (TRb cohort) and 77 negative for pineoblastoma (non-TRb cohort). The mean maximum diameter of the pineal gland was 6.4mm in Rb patients and 6.3mm in age-matched controls. The mean volume of the pineal gland in Rb patients was 93.1mm(3) and was 87.6mm(3) in age-matched controls. Considering all available MRI scans the mean maximum diameter of the pineal gland in TRb patients was 11.2mm and the mean volume in TRb patients was 453.3mm(3). The third reader identified pineoblastomas with a sensitivity of 100% (3 of 3) and a specificity of 94% (72 of 77). Our non-TRb patients did not show significant differences in the size of the pineal gland and pineal gland cysts compared to age-matched controls. The presented data can serve as a reference for the volume of normal pineal glands and pineal cysts in the diagnostic work-up of Rb patients with suspected pineoblastoma. Copyright © 2015 Elsevier B.V. All rights reserved.

Inter-image matching

NASA Technical Reports Server (NTRS)

Wolfe, R. H., Jr.; Juday, R. D.

1982-01-01

Interimage matching is the process of determining the geometric transformation required to conform spatially one image to another. In principle, the parameters of that transformation are varied until some measure of some difference between the two images is minimized or some measure of sameness (e.g., cross-correlation) is maximized. The number of such parameters to vary is faily large (six for merely an affine transformation), and it is customary to attempt an a priori transformation reducing the complexity of the residual transformation or subdivide the image into small enough match zones (control points or patches) that a simple transformation (e.g., pure translation) is applicable, yet large enough to facilitate matching. In the latter case, a complex mapping function is fit to the results (e.g., translation offsets) in all the patches. The methods reviewed have all chosen one or both of the above options, ranging from a priori along-line correction for line-dependent effects (the high-frequency correction) to a full sensor-to-geobase transformation with subsequent subdivision into a grid of match points.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Fast-track surgery for uncomplicated appendicitis in children: a matched case-control study.

PubMed

Cundy, Thomas P; Sierakowski, Kyra; Manna, Alexandra; Cooper, Celia M; Burgoyne, Laura L; Khurana, Sanjeev

2017-04-01

Standardized post-operative protocols reduce variation and enhance efficiency in patient care. Patients may benefit from these initiatives by improved quality of care. This matched case-control study investigates the effect of a multidisciplinary criteria-led discharge protocol for uncomplicated appendicitis in children. Key protocol components included limiting post-operative antibiotics to two intravenous doses, avoidance of intravenous opioid analgesia, prompt resumption of diet, active encouragement of early ambulation and nursing staff autonomy to discharge patients that met assigned criteria. The study period was from August 2015 to February 2016. Outcomes were compared with a historical control group matched for operative approach. Outcomes for 83 patients enrolled to our protocol were compared with those of 83 controls. There was a 29.2% reduction in median post-operative length of stay in our protocol-based care group (19.6 versus 27.7 h; P < 0.001). The rate of discharges within 24 h improved from 12 to 42%. There was no significant difference in complication rate (4.8 versus 7.2%; P = 0.51). Mean oral morphine dose equivalent per kilogram requirement was less than half (46%) that of control group patients (P < 0.001). Mean number of ondansetron doses was also significantly lower. Projected annual direct cost savings following protocol implementation was AUD$77 057. Implementation of a criteria-led discharge protocol at our hospital decreased length of stay, reduced variation in care, preserved existing low morbidity, incurred substantial cost savings, and safely rationalized opioid and antiemetic medication. These protocols are inexpensive and offer tangible benefits that are accessible to all health care settings. © 2016 Royal Australasian College of Surgeons.

The circular polarization inversion in δ〈Mn〉/InGaAs/GaAs light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dorokhin, M. V., E-mail: dorokhin@nifti.unn.ru; Danilov, Yu. A.; Zvonkov, B. N.

We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic δ〈Mn〉-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices.

Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

NASA Astrophysics Data System (ADS)

Philipps, Jan M.; Hölzel, Sara; Hille, Pascal; Schörmann, Jörg; Chatterjee, Sangam; Buyanova, Irina A.; Eickhoff, Martin; Hofmann, Detlev M.

2018-05-01

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In)GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed.

Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer

NASA Astrophysics Data System (ADS)

Johar, Muhammad Ali; Jeong, Dae Kyung; Afifi Hassan, Mostafa; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2017-12-01

The performance of a piezoelectric generator (PG) depends significantly on the internal screening process inside the device. As piezoelectric charges appear on both ends of the piezoelectric crystal, internal screening starts to decrease the piezoelectric bias. Therefore, the piezoelectric energy generated by external stress is not fully utilized by external circuit, which is the most challenging aspect of high-efficiency PGs. In this work, the internal screening effect of a NiO/GaN p-n PG was analyzed and controlled with an Al2O3 insertion layer. Internal screening in the p-n diode PG was categorized into free-carrier screening in neutral regions and junction screening due to charge drift across the junction. It was observed that junction screening could be significantly suppressed by inserting an Al2O3 layer and that effect was dominant in a leaky diode PG. With this implementation, the piezoelectric bias of the NiO/GaN PG was improved by a factor of ~100 for high-leakage diodes and a factor of ~1.6 for low-leakage diodes. Consequently, NiO/Al2O3/GaN PGs under a stress of 5 MPa provided a piezoelectric bias of 12.1 V and a current density of 2.25 µA cm-2. The incorporation of a highly resistive Al2O3 layer between p-NiO and n-GaN layers in NiO/GaN heterojunctions provides an efficient means of improving the piezoelectric performance by controlling the internal screening of the piezoelectric field.

AlInAsSb/GaSb staircase avalanche photodiode

NASA Astrophysics Data System (ADS)

Ren, Min; Maddox, Scott; Chen, Yaojia; Woodson, Madison; Campbell, Joe C.; Bank, Seth

2016-02-01

Over 30 years ago, Capasso and co-workers [IEEE Trans. Electron Devices 30, 381 (1982)] proposed the staircase avalanche photodetector (APD) as a solid-state analog of the photomultiplier tube. In this structure, electron multiplication occurs deterministically at steps in the conduction band profile, which function as the dynodes of a photomultiplier tube, leading to low excess multiplication noise. Unlike traditional APDs, the origin of staircase gain is band engineering rather than large applied electric fields. Unfortunately, the materials available at the time, principally AlxGa1-xAs/GaAs, did not offer sufficiently large conduction band offsets and energy separations between the direct and indirect valleys to realize the full potential of the staircase gain mechanism. Here, we report a true staircase APD operation using alloys of a rather underexplored material, AlxIn1-xAsySb1-y, lattice-matched to GaSb. Single step "staircase" devices exhibited a constant gain of ˜2×, over a broad range of applied bias, operating temperature, and excitation wavelengths/intensities, consistent with Monte Carlo calculations.

Psychosocial factors in childhood pedestrian injury: a matched case-control study. Kid's'n'Cars Team.

PubMed

Christoffel, K K; Donovan, M; Schofer, J; Wills, K; Lavigne, J V

1996-01-01

Psychosocial factors--such as hyperactivity and low family cohesion--contribute to the risk for child pedestrian injury (PI), even after controlling for known demographic risk factors. Urban PI victims aged 5 to 12 years were recruited from one large, urban pediatric trauma center in a large city. One hundred twenty-eight cases were matched to uninjured children on age, sex, race, location of residence, and parental education. Among matched cases: 70% were male, 41% were black, 33% were Hispanic, and 66% of the mothers had a high school education or less. RESEARCH DESIGN AND MEASUREMENTS: Case-control comparisons on 19 psychosocial variables drawn from interviews and standardized tests, using one-tailed matched-pairs t tests and conditional logistic regression analyses. Cases had higher reported physical quotient [PQ] (P = .01), self-help quotient (P = .04), and family stress (P = .02), and lower family supportiveness (P = .03). Multivariate analyses confirmed that PQ was higher in cases (10-point increase: odds ratio (OR) = 1.32 [90% confidence interval (CI) 1.01-1.76], that stress was higher in cases (1 log increase: OR 2.13, [1.26-3.61]), and that cases had lower family supportiveness (25-point decrease: OR 1.43 [1.25-1.63]). It also identified household crowding as a factor for non-black cases (OR for increase of 0.25 people per room: 2.18, [1.31-3.62]). Even when controlling for demographic risk, several family factors and one child factor place children at risk for PI. Clinicians may choose to use these as indicators for injury prevention counseling. Research on family effects may help clarify means to protect children who are demographically at risk for PI.

Magnetization reversal in epitaxial exchange-biased IrMn/FeGa bilayers with anisotropy geometries controlled by oblique deposition

NASA Astrophysics Data System (ADS)

Zhang, Yao; Zhan, Qingfeng; Zuo, Zhenghu; Yang, Huali; Zhang, Xiaoshan; Dai, Guohong; Liu, Yiwei; Yu, Ying; Wang, Jun; Wang, Baomin; Li, Run-Wei

2015-05-01

We fabricated epitaxial exchange biased (EB) IrMn/FeGa bilayers by oblique deposition and systematically investigated their magnetization reversal. Two different configurations with the uniaxial magnetic anisotropy Ku parallel and perpendicular to the unidirectional anisotropy Ke b were obtained by controlling the orientation of the incident FeGa beam during deposition. A large ratio of Ku/Ke b was obtained by obliquely depositing the FeGa layer to achieve a large Ku while reducing the IrMn thickness to obtain a small Ke b. Besides the previously reported square loops, conventional asymmetrically shaped loops, and one-sided and two-sided two-step loops, unusual asymmetrically shaped loops with a three-step magnetic transition for the descending branch and a two-step transition for the ascending branch and biased three-step loops were observed at various field orientations in the films of both IrMn (tIrMn=1.5 to 20 nm)/FeGa (10 nm) with Ku⊥ Ke b and IrMn (tIrMn≤2 nm)/FeGa (10 nm) with Ku|| Ke b . Considering the geometries of anisotropies, a model based on domain wall nucleation and propagation was employed to quantitatively describe the angular dependent behaviors of IrMn/FeGa bilayers. The biased three-step magnetic switching was predicted to take place when | Ku|> ɛ90°+Ke b , where ɛ90° is the 90° domain wall nucleation energy, and the EB leads to the appearance of the unusual asymmetrically shaped hysteresis loops.

IR Li2Ga2GeS6 nanocrystallized GeS2-Ga2S3-Li2S electroconductive chalcogenide glass with good nonlinearity

PubMed Central

Liu, Qiming; Zhang, Peng

2014-01-01

GeS2-Ga2S3-Li2S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS2-Ga2S3-Li2S system was extended to the cation ratio of 0–20% Li with around 40% Ga. GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained by the more carefully controlled heating rate. Its optical nonlinearity was investigated by the Maker fringe measurements, the maximum second harmonic intensity was observed to be 0.35 of the reference Z-cut quartz. IR Li2Ga2GeS6 nonlinear crystals were directly obtained at the composition of 40GeS2-30GaS1.5-30LiS0.5. PMID:25030713

Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.

PubMed

Yin, Long-Wei; Bando, Yoshio; Li, Mu-Sen; Golberg, Dmitri

2005-11-01

An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T.

2015-08-21

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations,more » the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.« less

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Skrobas, K.; Suski, T.; Christensen, N. E.; Svane, A.

2015-08-01

The electronic structures of short period mGaN/nGayAl1-yN and mInyGa1-yN/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Highly controllable ICP etching of GaAs based materials for grating fabrication

NASA Astrophysics Data System (ADS)

Weibin, Qiu; Jiaxian, Wang

2012-02-01

Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 D 10 W, RF2 D 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

PubMed Central

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O’Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-01-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications. PMID:28422129

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

PubMed

Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

2018-04-24

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeuchi, S., E-mail: takeuchi@ee.es.osaka-u.ac.jp; Asazu, H.; Nakamura, Y.

2015-12-28

We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration ofmore » the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.« less

Paths to light trapping in thin film GaAs solar cells.

PubMed

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

Dielectric function of InGaAs in the visible

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. E.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

1990-01-01

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Dielectric function of InGaAs in the visible

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Yao, H. D.; Snyder, P. G.; Woolam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.; Sieg, R. E.

1990-01-01

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

75 FR 41518 - Match-E-Be-Nash-She-Wish (Gun Lake) Tribe Liquor Control Ordinance

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-16

... ethyl alcohol, hydrated oxide of ethyl, or spirit of wine, commonly produced by the fermentation or... benefit of the Tribe. (j) ``Tribe'' means the Match-E-Be-Nash-She-Wish Band of Pottawatomi Indians of... and wine shall be purchased from distributors licensed by the Michigan Liquor Control Commission. (f...

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

NASA Astrophysics Data System (ADS)

Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

1998-05-01

InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

Controllable strain-induced uniaxial anisotropy of Fe{sub 81}Ga{sub 19} films deposited on flexible bowed-substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Guohong; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; School of Science, Nanchang University, Nanchang 330031

2013-11-07

We propose a convenient method to induce a uniaxial anisotropy in magnetostrictive Fe{sub 81}Ga{sub 19} films grown on flexible polyethylene terephthalate (PET) substrates by bending the substrate prior to deposition. A tensile/compressive stress is induced in the Fe{sub 81}Ga{sub 19} films when PET substrates are shaped from concave/convex to flat after deposition. The stressed Fe{sub 81}Ga{sub 19} films exhibit a significant uniaxial magnetic anisotropy due to the internal stress arising from changes in shape of PET substrates. The easy axis is along the tensile stress direction and the coercive field along easy axis is increased with increasing the internal tensilemore » stress. The remanence of hard axis is decreased with increasing the compressive stress, while the coercive field is almost unchanged. A modified Stoner-Wohlfarth model with considering the distribution of easy axes in polycrystalline films is used to account for the magnetic properties tuned by the strain-controlled magnetoelastic anisotropy in flexible Fe{sub 81}Ga{sub 19} films. Our investigations provide a convenient way to induce uniaxial magnetic anisotropy, which is particularly important for fabricating flexible magnetoelectronic devices.« less

Energy density effects on food intake, appetite ratings, and loss of control in women with binge eating disorder and weight-matched controls.

PubMed

Latner, Janet D; Rosewall, Juliet K; Chisholm, Amy M

2008-08-01

Individuals with binge eating disorder have increased gastric capacity and may require excessive food intake and increased volume in the stomach to produce satiation. The present study examined whether lower energy density (ED) meals lead to lower energy intake more than higher-ED meals in women with binge eating disorder (BED) and weight-matched controls. Women with BED (n=15) and healthy weight-matched controls (n=15) were instructed to consume as much as they wished during two test meals on non-consecutive days. Participants were served two hedonically similar versions of a pasta salad (19% protein, 50% carbohydrate, 31% fat): low-ED (1.0 kcal/g) and high-ED (1.6 kcal/g), and food intake and appetite ratings were assessed. Energy intake was significantly lower in the low-ED condition than in the high-ED condition across all participants. BED participants were more likely to report greater prospective consumption, desire for dessert, loss of control over eating, and less enjoyment after meals. Decreasing the energy density of food consumed may help target disturbances in satiation in women with frequent binge eating.

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

NASA Technical Reports Server (NTRS)

Waldstein, Seth W.; Barbosa Kortright, Miguel A.; Simons, Rainee N.

2017-01-01

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Endoscopic detection rate of sessile serrated lesions in Lynch syndrome patients is comparable with an age- and gender-matched control population: case-control study with expert pathology review.