Potential Policies and Laws to Prohibit Weight Discrimination: Public Views from 4 Countries

PubMed Central

Puhl, Rebecca M; Latner, Janet D; O’brien, Kerry S; Luedicke, Joerg; Danielsdottir, Sigrun; Salas, Ximena Ramos

2015-01-01

Context People viewed as “overweight” or “obese” are vulnerable to weight-based discrimination, creating inequities and adverse health outcomes. Given the high rates of obesity recorded globally, studies documenting weight discrimination in multiple countries, and an absence of legislation to address this form of discrimination, research examining policy remedies across different countries is needed. Our study provides the first multinational examination of public support for policies and legislation to prohibit weight discrimination. Methods Identical online surveys were completed by 2,866 adults in the United States, Canada, Australia, and Iceland. We assessed public support for potential laws to prohibit weight-based discrimination, such as adding body weight to existing civil rights statutes, extending disability protections to persons with obesity, and instituting legal measures to prohibit employers from discriminating against employees because of body weight. We examined sociodemographic and weight-related characteristics predicting support for antidiscrimination policies, and the differences in these patterns across countries. Findings The majority of participants in the United States, Canada, and Australia agreed that their government should have specific laws in place to prohibit weight discrimination. At least two-thirds of the participants in all 4 countries expressed support for policies that would make it illegal for employers to refuse to hire, assign lower wages, deny promotions, or terminate qualified employees because of body weight. Women and participants with higher body weight expressed more support for antidiscrimination measures. Beliefs about the causes of obesity were also related to support for these laws. Conclusions Public support for legal measures to prohibit weight discrimination can be found in the United States, Canada, Australia, and Iceland, especially for laws to remedy this discrimination in employment. Our findings

Structural disorder and elementary magnetic properties of triangular lattice ErMgGaO 4 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cevallos, F. Alex; Stolze, Karoline; Cava, Robert J.

The single crystal growth, structure, and basic magnetic properties of ErMgGaO 4 are reported. The structure consists of triangular layers of magnetic ErO 6 octahedra separated by a double layer of randomly occupied non-magnetic (Ga,Mg)O 5 bipyramids. The Er atoms are positionally disordered. Magnetic measurements parallel and perpendicular to the c axis of a single crystal reveal dominantly antiferromagnetic interactions, with a small degree of magnetic anisotropy. A weighted average of the directional data suggests an antiferromagnetic Curie Weiss temperature of approximately -30 K. Below 10 K the temperature dependences of the inverse susceptibilities in the in-plane and perpendicular-to planemore » directions are parallel, indicative of an isotropic magnetic moment at low temperatures. In conclusion, no sign of magnetic ordering is observed above 1.8 K, suggesting that ErMgGaO 4 is a geometrically frustrated magnet.« less

Structural disorder and elementary magnetic properties of triangular lattice ErMgGaO 4 single crystals

DOE PAGES

Cevallos, F. Alex; Stolze, Karoline; Cava, Robert J.

2018-03-23

The single crystal growth, structure, and basic magnetic properties of ErMgGaO 4 are reported. The structure consists of triangular layers of magnetic ErO 6 octahedra separated by a double layer of randomly occupied non-magnetic (Ga,Mg)O 5 bipyramids. The Er atoms are positionally disordered. Magnetic measurements parallel and perpendicular to the c axis of a single crystal reveal dominantly antiferromagnetic interactions, with a small degree of magnetic anisotropy. A weighted average of the directional data suggests an antiferromagnetic Curie Weiss temperature of approximately -30 K. Below 10 K the temperature dependences of the inverse susceptibilities in the in-plane and perpendicular-to planemore » directions are parallel, indicative of an isotropic magnetic moment at low temperatures. In conclusion, no sign of magnetic ordering is observed above 1.8 K, suggesting that ErMgGaO 4 is a geometrically frustrated magnet.« less

Customized weight curves for Spanish fetuses and newborns.

PubMed

González González, Nieves Luisa; González Dávila, Enrique; Cabrera, Francisco; Padrón, Erika; Castro, José Ramon; García Hernández, José Angel

2014-09-01

To construct a model of customized birthweight curves for use in a Spanish population. Data of 20 331 newborns were used to construct a customized birthweight model. Multiple regression analysis was performed with newborn weight as the dependent variable and gestational age (GA), sex and maternal (M) weight, height, parity and ethnic origin as the independent variables. Using the new model, 27,507 newborns were classified as adequate for GA (AGA), large for GA (LGA) or small for GA (SGA). The results were compared with those of other customized and non-customized models. The resulting formula for the calculation of optimal neonatal weight was: Optimum weight (g) = 3289.681 + 135.413*GA40-14.063*GA40(2)-0.838*GA40(3) + 113.889 (if multiparous) + 165.560 (if origin = Asia) + 161.550 (South America) + 67.927 (rest of Europe) +109.265 (North Africa) + 9.392*Maternal-Height + 4.856*Maternal-Weight-0.098*Maternal-Weight(2) + 0.001*Maternal-Weight(3) + 67.188*Sex + GA40*(6.890*Sex + 9.032 (If multiparous) +0.006*Maternal-Height(3) + 0.260*Maternal-Weight) + GA40(2) (-0.378*Maternal-Height - 0.008*Maternal-Height(2)) + GA40(3) (-0.032*Maternal-Height). Weight percentiles were obtained from standard data using optimum weight variation coefficient. Agreement between our customized model and other Spanish models was "good" (κ = 0.717 and κ = 0.736; p < 0.001). Our model is comparable to other Spanish models, but offers the advantage of being customized, updated and freely available on the web. The 30.6% of infants classified as SGA using our model would be considered as AGA following a non-customized model.

Gibberellins and stem growth in Arabidopsis thaliana. Effects of photoperiod on expression of the GA4 and GA5 loci.

PubMed

Xu, Y L; Gage, D A; Zeevaart, J A

1997-08-01

Arabidopsis thaliana (L.) Heynh. is a quantitative long-day (LD) rosette plant in which stem growth is mediated by gibberellins (CAs). Application of GAs to plants in short-day (SD) conditions resulted in rapid stem elongation and flower formation, with GA4 and GA9 being equally effective, and GA1 showing lower activity. The effects of photoperiod on the levels of endogenous GAs were measured by combined gas chromatography-mass spectrometry with selected ion monitoring. When plants were transferred from SD to LD conditions there was a slight decrease in the level of GA53 and an increase in the levels of C19-GAs, GA9, GA20, GA1, and GA8, indicating that GA 20-oxidase activity is stimulated in LD conditions. Expression of GA5, which encodes GA 20-oxidase, was highest in elongating stems and was correlated with the rate of stem elongation. By contrast, GA4, which encodes 3 beta-hydroxylase, showed low expression in stems and its expression was not correlated with the rate of stem elongation. We conclude that stem elongation in LD conditions is at least in part due to increased expression of GA5, whereas expression of GA4 is not under photoperiodic control.

Rare Earth 4f Hybridization with the GaN Valence Band

DTIC Science & Technology

2012-01-01

DOS of Ga17GdN18. and Auger-like electrons emitted in a super Coster– Kronig process [52] 4d104fN + hν → [4d94fN+1]∗ → 4d104fN−1 + e−, (2) where...similar, albeit not identical, response for GaN:Er compared to GaN:Gd at the photon energy characteristic for the Er 4d → 4f super Coster– Kronig resonance

Magnetic and Fermi Surface Properties of EuGa4

NASA Astrophysics Data System (ADS)

Nakamura, Ai; Hiranaka, Yuichi; Hedo, Masato; Nakama, Takao; Miura, Yasunao; Tsutsumi, Hiroki; Mori, Akinobu; Ishida, Kazuhiro; Mitamura, Katsuya; Hirose, Yusuke; Sugiyama, Kiyohiro; Honda, Fuminori; Settai, Rikio; Takeuchi, Tetsuya; Hagiwara, Masayuki; Matsuda, Tatsuma D.; Yamamoto, Etsuji; Haga, Yoshinori; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Harima, Hisatomo; Ōnuki, Yoshichika

2013-10-01

We grew a high-quality single crystal EuGa4 with the tetragonal structure by the Ga self-flux method, and measured the electrical resistivity, magnetic susceptibility, high-field magnetization, specific heat, thermoelectric power and de Haas--van Alphen (dHvA) effect, together with the electrical resistivity and thermoelectric power under pressure. EuGa4 is found to be a Eu-divalent compound without anisotropy of the magnetic susceptibility in the paramagnetic state and to reveal the same magnetization curve between H \\parallel [100] and [001] in the antiferromagnetic state, where the antiferromagnetic easy-axis is oriented along the [100] direction below a Néel temperature TN=16.5 K. The magnetization curve is discussed on the basis of a simple two-sublattice model. The Fermi surface in the paramagnetic state was clarified from the results of a dHvA experiment for EuGa4 and an energy band calculation for a non-4f reference compound SrGa4, which consists of a small ellipsoidal hole--Fermi surface and a compensated cube-like electron--Fermi surface with vacant space in center. We observed an anomaly in the temperature dependence of the electrical resistivity and thermoelectric power at TCDW=150 K under 2 GPa. This might correspond to an emergence of the charge density wave (CDW). The similar phenomenon was also observed in EuAl4 at ambient pressure. We discussed the CDW phenomenon on the basis of the present peculiar Fermi surfaces.

Effects of exogenous application of CPPU, NAA and GA4+7 on parthenocarpy and fruit quality in cucumber (Cucumis sativus L.).

PubMed

Qian, Chunlu; Ren, Nannan; Wang, Jingye; Xu, Qiang; Chen, Xuehao; Qi, Xiaohua

2018-03-15

In protected vegetable fields, plant growth regulators are often used to improve cucumber fruit growth. However, the effects of plant growth regulators on the appearance and nutritional quality of cucumber (Cucumis sativus L.) remain largely unknown. In the present study, 100 mg/L N-(2-chloro-4-pyridyl)-N'-phenylurea (CPPU), naphthaleneacetic acid (NAA) or gibberellin A4+A7 (GA 4+7 ) was applied to the female cucumber flowers 1 day before anthesis and at anthesis. The CPPU, NAA and GA 4+7 treatments resulted in parthenocarpic fruits with similar weights, sizes and shapes as the pollinated fruits. NAA treatment did not affect the appearance and nutritional characteristics of cucumber at harvest and after storage. CPPU treatment increased the flesh firmness at harvest but decreased phenolic acid and vitamin C contents after storage. GA 4+7 treatment decreased the flesh firmness but increased total flavonoids and protein content after storage. Copyright © 2017 Elsevier Ltd. All rights reserved.

Synthesis, structure, and electronic structure of CsAgGa{sub 2}Se{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei Dajiang; Yin Wenlong; Feng Kai

2012-02-15

The new metal chalcogenide CsAgGa{sub 2}Se{sub 4} has been synthesized by means of the reactive flux method. It crystallizes in the space group P2{sub 1}/c of the monoclinic system with cell dimensions of a=11.225(2) A, b=7.9443(16) A, c=21.303(4) A, {beta}=103.10(3), V=1850.3(6), and Z=8. The structure contains two-dimensional {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers separated by Cs{sup +} cations. The {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} superlayer possesses a novel chain-sublayer-chain structure: a {sub {infinity}}{sup 2}[Ag{sub 2}GaSe{sub 6}]{sup 7-} sublayer, composed of {sub {infinity}}{sup 1}[AgGaSe{sub 4}]{sup 4-} chains that are further connected by Ag{sup +} ions, is sandwiched by parallelmore » {sub {infinity}}{sup 1}[Ga{sub 3}Se{sub 8}]{sup 7-} chains to generate the {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} superlayer. From a band structure calculation, the orbitals of all atoms have contributions to the bottoms of conduction bands, but the band gap is mainly determined by the 4s, 4p orbitals of Ga and Se. - Graphical Abstract: CsAgGa{sub 2}Se{sub 4} contains two-dimensional {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers with a novel chain-sublayer-chain structure. Highlights: Black-Right-Pointing-Pointer New chalcogenide CsAgGa{sub 2}Se{sub 4} has been synthesized. Black-Right-Pointing-Pointer It possesses a new structure type with {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers separated by Cs{sup +} cations. Black-Right-Pointing-Pointer {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} consists of a {sub {infinity}}{sup 2}[Ag{sub 2}GaSe{sub 6}]{sup 7-} sublayer sandwiched by {sub {infinity}}{sup 1}[Ga{sub 3}Se{sub 8}]{sup 7-} chains. Black-Right-Pointing-Pointer Band gap of CsAgGa{sub 2}Se{sub 4} is mainly determined by the 4s, 4p orbitals of Ga and Se.« less

Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

NASA Astrophysics Data System (ADS)

Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

2006-09-01

Ce-doped CaGa2S4 and SrGa2S4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H2S and O2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce3+ activated CaGa2S4 and SrGa2S4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O2 gas stream.

Fully automated GMP production of [68Ga]Ga-DO3A-VS-Cys40-Exendin-4 for clinical use

PubMed Central

Velikyan, Irina; Rosenstrom, Ulrika; Eriksson, Olof

2017-01-01

[68Ga]Ga-DO3A-VS-Cys40-Exendin-4/PET-CT targeting glucagon like peptide-1 receptor (GLP-1R) has previously demonstrated its potential clinical value for the detection of insulinomas. The production and accessibility of this radiopharmaceutical is one of the critical factors in realization of clinical trials and routine clinical examinations. Previously, the radiopharmaceutical was prepared manually, however larger scale of clinical trials and healthcare requires automation of the production process in order to limit the operator radiation dose as well as improve tracer manufacturing robustness and on-line documentation for enhanced good manufacturing practice (GMP) compliance. A method for 68Ga-labelling of DO3A-VS-Cys40-Exendin-4 on a commercially available synthesis platform was developed. Equipment such as 68Ge/68Ga generator, synthesis platform, and disposable cassettes for 68Ga-labelling used in the study was purchased from Eckert & Ziegler. DO3A-VS-Cys40-Exendin-4 was synthesized in-house. The parameters such as time, temperature, precursor concentration, radical scavenger, buffer concentration, pH, product purification step were investigated and optimised. Reproducible and GMP compliant automated production of [68Ga]Ga-DO3A-VS-Cys40-Exendin-4 was developed. Exendin-4 comprising methionine amino acid residue was prone to oxidation which was strongly influenced by the elevated temperature, radioactivity amount, and precursor concentration. The suppression of the oxidative radiolysis was achieved by addition of ethanol, dihydroxybenzoic acid and ascorbic acid to the reaction buffer as well as by optimizing heating temperature. The non-decay corrected radiochemical yield was 43±2% with radiochemical purity of over 90% wherein the individual impurity signals in HPLC chromatogram did not exceed 5%. Automated production and quality control methods were established for paving the pathway for broader clinical use of [68Ga]Ga-DO3A-VS-Cys40-Exendin-4. PMID:28721305

Role of GA3, GA4 and uniconazole-P in controlling gravitropism and tension wood formation in Fraxinus mandshurica Rupr. var. japonica Maxim. seedlings.

PubMed

Jiang, Sha; Xu, Ke; Wang, Yong-Zhou; Ren, Yan-Ping; Gu, Song

2008-01-01

GA(3) and GA(4) (gibberellins) play an important role in controlling gravitropism and tension wood formation in woody angiosperms. In order to improve our understanding of the role of GA(3) and GA(4) on xylem cell formation and the G-layer, we studied the effect of GA(3) and GA(4) and uniconazole-P, which is an inhibitor of GA biosynthesis, on tension wood formation by gravity in Fraxinus mandshurica Rupr. var. japonica Maxim. seedlings. Forty seedlings were divided into two groups; one group was placed upright and the other tilted. Each group was further divided into four sub-groups subjected to the following treatments: 3.43 x 10(-9) micromol acetone as control, 5.78 x 10(-8) micromol gibberellic acid (GA(3)), 6.21 x 10(-8) micromol GA(4), and 6.86 x 10(-8) micromol uniconazole-P. During the experimental period, GAs-treated seedlings exhibited negative gravitropism, whereas application of uniconazole-P inhibited negative gravitropic stem bending. GA(3) and GA(4) promoted wood fibers that possessed a gelatinous layer on the upper side, whereas uniconazole-P inhibited wood formation but did not inhibit the differentiation of the gelatinous layer in wood fibers on the upper side. These results suggest that: (i) both the formation of gelatinous fibers and the quantity of xylem production are important for the negative gravitropism in horizontally-positioned seedlings; (ii) GA(3) and GA(4) affect wood production more than differentiation of the gelatinous layer in wood fibers; G-layer development may be regulated by other hormones via the indirect-role of GA(3) and GA(4) in horizontally-positioned F. mandshurica seedlings rather than the direct effect of GAs; and (iii) the mechanism for upward wood stem bending is different to the newly developed shoot bending in reaction to gravity in this species.

Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

NASA Astrophysics Data System (ADS)

Murape, D. M.; Eassa, N.; Neethling, J. H.; Betz, R.; Coetsee, E.; Swart, H. C.; Botha, J. R.; Venter, A.

2012-07-01

A sulphur based chemical, [(NH4)2S/(NH4)2SO4] to which S has been added, not previously reported for the treatment of (1 0 0) n-GaSb surfaces, is introduced and benchmarked against the commonly used passivants Na2S·9H2O and (NH4)2S. The surfaces of the treated material were studied by scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxides present on the GaSb surface are more effectively removed when treated with ([(NH4)2S/(NH4)2SO4] + S) than with (NH4)2S or Na2S·9H2O, as evidenced by the ratio of the O506 eV to Sb457 eV AES peaks. XPS results reveal that Sb2S3/Sb2S5 "replaces" Sb2O3/Sb2O5, suggesting that sulphur atoms substitute oxygen atoms in Sb2O3/Sb2O5 to form Sbsbnd S. It seems sulphurization only partially removes Ga2O3. Treatment with ([(NH4)2S/(NH4)2SO4] + S) also results in a noteworthy improvement in the current-voltage (I-V) characteristics of Au/n-GaSb Schottky contacts compared to those fabricated on as-received material.

New insights into the application of the valence rules in Zintl phases—Crystal and electronic structures of Ba{sub 7}Ga{sub 4}P{sub 9}, Ba{sub 7}Ga{sub 4}As{sub 9}, Ba{sub 7}Al{sub 4}Sb{sub 9}, Ba{sub 6}CaAl{sub 4}Sb{sub 9}, and Ba{sub 6}CaGa{sub 4}Sb{sub 9}

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Hua; Stoyko, Stanislav; Bobev, Svilen, E-mail: bobev@udel.edu

Crystals of three new ternary pnictides—Ba{sub 7}Al{sub 4}Sb{sub 9}, Ba{sub 7}Ga{sub 4}P{sub 9}, and Ba{sub 7}Ga{sub 4}As{sub 9} have been prepared by reactions of the respective elements in molten Al or Pb fluxes. Single-crystal X-ray diffraction studies reveal that the three phases are isotypic, crystallizing in the orthorhombic Ba{sub 7}Ga{sub 4}Sb{sub 9}-type structure (space group Pmmn, Pearson symbol oP40, Z=2), for which only the prototype is known. The structure is based on TrPn{sub 4} tetrahedra (Tr=Al, Ga; Pn=P, As, Sb), connected in an intricate scheme into 1D-ribbons. Long interchain Pn–Pn bonds (d{sub P–P}>3.0 Å; d{sub As–As}>3.1 Å; d{sub Sb–Sb}>3.3 Å)more » account for the realization of 2D-layers, separated by Ba{sup 2+} cations. Applying the classic valance rules to rationalize the bonding apparently fails, and Ba{sub 7}Ga{sub 4}Sb{sub 9} has long been known as a metallic Zintl phase. Earlier theoretical calculations, both empirical and ab-initio, suggest that the possible metallic properties originate from filled anti-bonding Pn–Pn states, and the special roles of the “cations” in this crystal structure. To experimentally probe this hypothesis, we sought to synthesize the ordered quaternary phases Ba{sub 6}CaTr{sub 4}Sb{sub 9} (Tr=Al, Ga). Single-crystal X-ray diffraction work confirms Ba{sub 6.145(3)}Ca{sub 0.855}Al{sub 4}Sb{sub 9} and Ba{sub 6.235(3)}Ca{sub 0.765}Ga{sub 4}Sb{sub 9}, with Ca atoms preferably substituting Ba on one of the three available sites. The nuances of the five crystal structures are discussed, and the chemical bonding in Ba{sub 7}Ga{sub 4}As{sub 9} is interrogated by tight-binding linear muffin-tin orbital calculations. - Graphical abstract: The new Zintl phases—Ba{sub 7}Al{sub 4}Sb{sub 9}, Ba{sub 7}Ga{sub 4}P{sub 9}, and Ba{sub 7}Ga{sub 4}As{sub 9}, and their quaternary variants Ba{sub 6}CaTr{sub 4}Sb{sub 9} (Tr=Al, Ga)—crystallize in the Ba{sub 7}Ga{sub 4}Sb{sub 9} structure type. The structures

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

PubMed Central

2010-01-01

In this paper, ZnGa2O4 hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga2O3 nanowires were synthesized and employed as templates for the growth of ZnGa2O4 nanocombs; then, the as-prepared Ga2O3 nanowires were reacted with ZnO vapor to form ZnGa2O4 nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga2O3 nanowires and used as catalysts to control the teeth growth of ZnGa2O4 nanocombs. The as-prepared ZnGa2O4 nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa2O4 nanocombs, which make it promising application as an optical material. PMID:20802787

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.

On the multiferroic skyrmion-host GaV4S8

NASA Astrophysics Data System (ADS)

Widmann, S.; Ruff, E.; Günther, A.; Krug von Nidda, H.-A.; Lunkenheimer, P.; Tsurkan, V.; Bordács, S.; Kézsmárki, I.; Loidl, A.

2017-12-01

The lacunar spinel GaV4S8 exhibits orbital ordering at 44 K and shows a complex magnetic phase diagram below 12.7 K, which includes ferromagnetic and cycloidal spin order. At low but finite external magnetic fields, Néel-type skyrmions are formed in this material. Skyrmions are whirl-like spin vortices that have received great theoretical interest because of their non-trivial spin topology and that are also considered as basic entities for new data-storage technologies. Interestingly, we found that the orbitally ordered phase shows sizable ferroelectric polarisation and that excess spin-driven polarisations appear in all magnetic phases, including the skyrmion-lattice phase. Hence, GaV4S8 shows simultaneous magnetic and polar order and belongs to the class of multiferroics materials that attracted enormous attention in recent years. Here, we summarise the existing experimental information on the magnetic, electronic and dielectric properties of GaV4S8. By performing detailed magnetic susceptibility, resistivity, specific heat and dielectric experiments, we complement the low-temperature phase diagram. Specifically, we show that the low-temperature and low-field ground state of GaV4S8 seems to have a more complex spin configuration than purely collinear ferromagnetic spin order. In addition, at the structural Jahn-Teller transition the magnetic exchange interaction changes from antiferromagnetic to ferromagnetic. We also provide experimental evidence that the vanadium V4 clusters in GaV4S8 can be regarded as molecular units with spin 1/2. However, at high temperatures deviations in the susceptibility show up, indicating that either the magnetic moments of the vanadium atoms fluctuate independently or excited states of the V4 molecule become relevant.

Ultraviolet luninescence of ScPO 4, AlPO 4, and GaPO 4 crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trukhin, Anatoly N.; Shmits, Krishjanis; Jansons, Janis L.

2013-08-29

The luminescence of self-trapped excitons (STE) was previously observed and described for the case of tetragonal-symmetry ScPO 4 single crystals in 1996 by Trukhin and Boatner. The subject band in this material is situated in the UV spectral range of ~210 nm or ~5.8 eV. In the present work, we are both expanding this earlier luminescence study and seeking to identify similar luminescence phenomena in other orthophosphate crystals i.e., AlPO 4 and GaPO 4. These efforts have proven to be successful - in spite of the structural differences between these materials and ScPO 4. Specifically we have found that formore » AlPO 4 and GaPO 4, in addition to an -quartz-like STE, there is a UV luminescence that is similar in position and decay properties to that of ScPO 4 crystals. Potentially this represents an STE in AlPO 4, and GaPO 4 crystals that is analogous to the STE of ScPO 4 and other orthophosphates. The decay kinetics of the UV luminescence of ScPO 4 were studied over a wide temperature range from 8 to 300 K, and they exhibited some unusual decay characteristics when subjected to pulses from an F 2 excimer laser (157 nm). These features could be ascribed to a triplet state of the STE that is split in a zero magnetic field. A fast decay of the STE was detected as well, and therefore, we conclude that, in addition to the slow luminescence corresponding to a transition from the triplet state, there are singlet-singlet transitions of the STE. Furthermore, time-resolved spectra of the slow and fast decay exhibit a small shift (~0.15 eV) indicating that the singlet triplet splitting is small and the corresponding wave function of the STE is widely distributed over the atoms of the ScPO 4 crystal where the STE is created.« less

SOLID SOLUTION EFFECTS ON THE THERMAL PROPERTIES IN THE MgAl2O4-MgGa2O4

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Hara, Kelley; Smith, Jeffrey D; Sander, Todd P.

Solid solution eects on thermal conductivity within the MgO-Al2O3-Ga2O3 system were studied. Samples with systematically varied additions of MgGa2O4 to MgAl2O4 were prepared and the laser ash technique was used to determine thermal diusivity at temperatures between 200C and 1300C. Heat capacity as a function of temperature from room temperature to 800C was also determined using dierential scanning calorimetry. Solid solution in the MgAl2O4-MgGa2O4 system decreases the thermal conductivity up to 1000C. At 200C thermal conductivity decreased 24% with a 5 mol% addition of MgGa2O4 to the system. At 1000C the thermal conductivity decreased 13% with a 5 mol% addition.more » Steady state calculations showed a 12.5% decrease in heat ux with 5 mol% MgGa2O4 considered across a 12 inch thickness.« less

Investigation of magnetic properties on spin-ordering effects of FeGa2S4 and FeIn2S4

NASA Astrophysics Data System (ADS)

Myoung, Bo Ra; Lim, Jung Tae; Kim, Chul Sung

2017-09-01

We have studied crystal and magnetic properties of chalcogenides FeGa2S4 and FeIn2S4 with X-ray diffractometer (XRD), magnetic property measurement system (MPMS), magnetometer, physical property measurement system (PPMS), and Mössbauer spectrometer. The crystal structure has 2-dimension triangular lattice structure with P-3m1 of FeGa2S4, while FeIn2S4 has inverse spinel with space group Fd3m. The AC magnetic susceptibility measurements show that FeGa2S4 is an insulating spin glass material, exhibiting geometrical frustration, unlike in the antiferromagnetic [AFM] metallic spin glass FeIn2S4. From hysteresis (M-H) curves at 4.2 K, FeGa2S4 has spin-flop behavior with an angle of 120° of triangle, as against linear slope of FeIn2S4 due to anti-parallel spin. The gap energy by splitting of 5T2g, Δ1 and electric quadrupole splitting ΔEQ of FeIn2S4 are much higher than that of FeGa2S4 at 4.2 K because FeGa2S4 is geometrically frustrated magnet having degenerate ground state at low temperature.

Do early postnatal body weight changes contribute to neonatal morbidities in the extremely low birth weight infants.

PubMed

Verma, R; Shibly, S; Fang, H; Pollack, S

2015-01-01

The implications of early postnatal body weight changes (Δbw) in the morbidities related to body fluid metabolism in sick preterm infants in not well investigated. The extremely low birth weight infants (ELBW, birth weight <1000 g) have the highest incidence of such morbidities among all neonates. To determine the relationships between Δbw and neonatal morbidities associated with body fluid metabolism in the ELBW infants. In an observational study, the associations between daily weight changes from birth weight (DΔ bw) and oxygen dependence on postnatal day 28 (BPD28), patent ductus arteriosus (PDA), intraventricular-periventricular hemorrhage (IVH), antenatal steroid (ANS) and gestational age (GA) were evaluated. Maximum weight loss (MΔ bw) was correlated with GA, BPD28 and BPD36 (oxygen dependence on postmenstrual 36 weeks). Pearson's correlation co-efficient and multivariate logistic regressions were performed for analysis. DΔ bw correlated inversely with GA on days 1-8 of life (p <  0.01 for all, 0.06 for DOL 2). DΔ bw was associated with a lower risk of BPD28 on days 6 (OR 0.87, 95% CI 0.76-1), 10 (OR 0.86, 95% CI 0.76-0.98) and 11 (OR 0.87, 95% CI 0.77-0.99); with PDA on days 8-11 (OR ranging between 0.89 to 0.92 for the 4 days, 95% CI 0.83 to 0.99) and with IVH on day 5 (OR 0.93, 95% CI 0.86-1) after controlling for GA. DΔ bw was not identified as risk factor for the tested morbidities. ANS decreased DΔ bw on days 4 (OR 0.88, 95% CI 0.78-1) and 10 (OR 0.9, 95% CI 0.84-1). MΔbw correlated directly with BPD28 (r = 0.3, p = 0.004), which declined after controlling for GA (r = 0.2, p = 0.2). DΔ bw is protective for PDA, BPD28 and IVH, independent of gestational age, whereas, the effects of MΔ bw on BPD are governed by maturation in ELBW infants. ANS decreases DΔbw, which correlates inversely with GA during the first week of life.

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si 3N 4

NASA Astrophysics Data System (ADS)

Cheng, Kai; Leys, M.; Derluyn, J.; Degroote, S.; Xiao, D. P.; Lorenz, A.; Boeykens, S.; Germain, M.; Borghs, G.

2007-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on 4 and 6 in Si(1 1 1) substrates by metal organic vapor phase epitaxy (MOVPE). A record sheet resistance of 256 Ω/□ has been measured by contactless eddy current mapping on 4 in silicon substrates. The wafer also shows an excellent uniformity and the standard variation is 3.6 Ω/□ over the whole wafer. These values were confirmed by Hall-Van der Pauw measurements. In the 2DEG at the AlGaN/GaN interface, the electron mobility is in the range of 1500-1800 cm 2/Vs and the electron density is between 1.3×10 13 and 1.7×10 13 cm -2. The key step in obtaining these results is an in-situ deposited Si 3N 4 passivation layer. This in-situ Si 3N 4, deposited directly after AlGaN top layer growth in the MOVPE reactor chamber, not only prevents the stress relaxation in AlGaN/GaN hetero-structures but also passivates the surface states of the AlGaN cap layer. HEMT transistors have been processed on the epitaxial structures and the maximum source-drain current density is 1.1 A/mm for a gate-source voltage of 2 V. The current collapse is minimized thanks to in-situ Si 3N 4. First results on AlGaN/GaN structures grown on 6 in Si(1 1 1) are also presented.

Experimental and first-principles calculation study of the pressure-induced transitions to a metastable phase in GaP O4 and in the solid solution AlP O4-GaP O4

NASA Astrophysics Data System (ADS)

Angot, E.; Huang, B.; Levelut, C.; Le Parc, R.; Hermet, P.; Pereira, A. S.; Aquilanti, G.; Frapper, G.; Cambon, O.; Haines, J.

2017-08-01

α -Quartz-type gallium phosphate and representative compositions in the AlP O4-GaP O4 solid solution were studied by x-ray powder diffraction and absorption spectroscopy, Raman scattering, and by first-principles calculations up to pressures of close to 30 GPa. A phase transition to a metastable orthorhombic high-pressure phase along with some of the stable orthorhombic C m c m CrV O4 -type material is found to occur beginning at 9 GPa at 320 ∘C in GaP O4 . In the case of the AlP O4-GaP O4 solid solution at room temperature, only the metastable orthorhombic phase was obtained above 10 GPa. The possible crystal structures of the high-pressure forms of GaP O4 were predicted from first-principles calculations and the evolutionary algorithm USPEX. A predicted orthorhombic structure with a P m n 21 space group with the gallium in sixfold and phosphorus in fourfold coordination was found to be in the best agreement with the combined experimental data from x-ray diffraction and absorption and Raman spectroscopy. This method is found to very powerful to better understand competition between different phase transition pathways at high pressure.

Sulfur doping of GaAs with (NH4)2Sx solution

NASA Astrophysics Data System (ADS)

Lee, Jong-Lam

1999-01-01

A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

Electronic structure and optical properties of defect chalcopyrite HgGa2Se4

NASA Astrophysics Data System (ADS)

Gabrelian, B. V.; Lavrentyev, A. A.; Vu, Tuan V.; Parasyuk, O. V.; Khyzhun, O. Y.

2018-01-01

We report on studies from an experimental and theoretical viewpoint of the electronic structure of mercury digallium selenide, HgGa2Se4, a very promising optoelectronic material. In particular, the method of X-ray photoelectron spectroscopy (XPS) was used to evaluate binding energies of the constituent element core electrons and the shape of the valence band for pristine and Ar+-ion bombarded surfaces of HgGa2Se4 single crystal. First principles band-structure calculations were performed in the present work using the augmented plane wave + local orbitals (APW+lo). These calculations indicate that the Se 4p states are the main contributors at the top and in the upper portion of the valence band with slightly smaller contributions of the Ga 4p states in the upper portion of the band as well. Further, the central portion of the valence band is determined mainly by contributions of the Ga 4s states, and the Hg 5d states are the principal contributors to the bottom of the valence band. These theoretical data are in fair agreement when matching on a common energy scale of the X-ray emission bands giving information on the energy distribution of the Se 4p and Ga 4p states and the XPS valence-band spectrum of the HgGa2Se4 crystal. The principal optical constants are elucidated from the DFT calculations.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

Synthesis,and structural characterization of [(CH3(C5H4N))Ga(SCH2(CO)O)]-[(4-MepyH)]+, a novel Ga(III) five coordinate complex.

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Duraj, Stan A.; Fanwic, Phillp E.; Hepp, Aloysius F.; Martuch, Robert A.

2003-01-01

The synthesis and structural characterization of a novel ionic Ga(III) five coordinate complex [{CH3(C5H4N)}Ga(SCH2(CO)O)2]-[(4-MepyH)]+, (4-Mepy = CH3(C5H5N)) from the reaction between Ga2Cl4 with sodium mercapto-acetic acid in 4-methylpyridine is described. Under basic reaction conditions the mercapto ligand is found to behave as a 2e- bidentate ligand. Single crystal X-ray diffraction studies show the complex to have a distorted square pyramidal geometry with the [(-SCH2(CO)CO-)] ligands in a trans conformation. The compound crystallizes in the P2(sub 1)/c (No. 14) space group with a = 7.7413(6) A, b = 16.744(2) A, c = 14.459(2) A, V = 1987.1(6) A(sup 3), R(F) = 0.032 and R(sub w) = 0.038.

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

NASA Astrophysics Data System (ADS)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

NASA Astrophysics Data System (ADS)

Murape, D. M.; Eassa, N.; Nyamhere, C.; Neethling, J. H.; Betz, R.; Coetsee, E.; Swart, H. C.; Botha, J. R.; Venter, A.

2012-05-01

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH4)2S/(NH4)2SO4) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (ϕb) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at -0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb-O, present on the as-received material is effectively removed on treating with ([(NH4)2S/(NH4)2SO4]+S) and (NH4)2S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.

The CHOP postnatal weight gain, birth weight, and gestational age retinopathy of prematurity risk model.

PubMed

Binenbaum, Gil; Ying, Gui-Shuang; Quinn, Graham E; Huang, Jiayan; Dreiseitl, Stephan; Antigua, Jules; Foroughi, Negar; Abbasi, Soraya

2012-12-01

To develop a birth weight (BW), gestational age (GA), and postnatal-weight gain retinopathy of prematurity (ROP) prediction model in a cohort of infants meeting current screening guidelines. Multivariate logistic regression was applied retrospectively to data from infants born with BW less than 1501 g or GA of 30 weeks or less at a single Philadelphia hospital between January 1, 2004, and December 31, 2009. In the model, BW, GA, and daily weight gain rate were used repeatedly each week to predict risk of Early Treatment of Retinopathy of Prematurity type 1 or 2 ROP. If risk was above a cut-point level, examinations would be indicated. Of 524 infants, 20 (4%) had type 1 ROP and received laser treatment; 28 (5%) had type 2 ROP. The model (Children's Hospital of Philadelphia [CHOP]) accurately predicted all infants with type 1 ROP; missed 1 infant with type 2 ROP, who did not require laser treatment; and would have reduced the number of infants requiring examinations by 49%. Raising the cut point to miss one type 1 ROP case would have reduced the need for examinations by 79%. Using daily weight measurements to calculate weight gain rate resulted in slightly higher examination reduction than weekly measurements. The BW-GA-weight gain CHOP ROP model demonstrated accurate ROP risk assessment and a large reduction in the number of ROP examinations compared with current screening guidelines. As a simple logistic equation, it can be calculated by hand or represented as a nomogram for easy clinical use. However, larger studies are needed to achieve a highly precise estimate of sensitivity prior to clinical application.

LiGa(OTf)(sub 4) as an Electrolyte Salt for Li-Ion Cells

NASA Technical Reports Server (NTRS)

Reddy, V. Prakash; Prakash, G. K. Syria; Hu, Jinbo; Yan, Ping; Smart, Marshall; Bugga, ratnakumar; Chin, Keith; Surampudi, Subarao

2008-01-01

Lithium tetrakis(trifluoromethane sulfo - nato)gallate [abbreviated "LiGa(OTf)4" (wherein "OTf" signifies trifluoro - methanesulfonate)] has been found to be promising as an electrolyte salt for incorporation into both liquid and polymer electrolytes in both rechargeable and non-rechargeable lithium-ion electrochemical cells. This and other ingredients have been investigated in continuing research oriented toward im proving the performances of rechargeable lithium-ion electrochemical cells, especially at low temperatures. This research at earlier stages, and the underlying physical and chemical principles, were reported in numerous previous NASA Tech Briefs articles. As described in more detail in those articles, lithiumion cells most commonly contain nonaqueous electrolyte solutions consisting of lithium hexafluorophosphate (LiPF6) dissolved in mixtures of cyclic and linear alkyl carbonates, including ethylene carbonate (EC), propylene carbonate (PC), dimethyl carbonate (DMC), diethyl carbonate (DEC), and ethyl methyl carbonate (EMC). Although such LiPF6-based electrolyte solutions are generally highly ionically conductive and electrochemically stable, as needed for good cell performance, there is interest in identifying alternate lithium electrolyte salts that, relative to LiPF6, are more resilient at high temperature and are less expensive. Experiments have been performed on LiGa(OTf)4 as well as on several other candidate lithium salts in pursuit of this interest. As part of these experiments, LiGa(OTf)4 was synthesized by the reaction of Ga(OTf)3 with an equimolar portion of LiOTf in a solvent consisting of anhydrous acetonitrile. Evaporation of the solvent yielded LiGa(OTf)4 as a colorless crystalline solid. The LiGa(OTf)4 and the other salts were incorporated into solutions with PC and DMC. The resulting electrolyte solutions exhibited reasonably high ionic conductivities over a relatively wide temperature range down to 40 C (see figure). In cyclic

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Multiferroic GaN nanofilms grown within Na-4 mica channels

NASA Astrophysics Data System (ADS)

Bhattacharya, Santanu; Datta, A.; Chakravorty, D.

2010-03-01

Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

Growth and optical waveguide fabrication in spinel MgGa2O4 crystal

NASA Astrophysics Data System (ADS)

Wang, Liang-Ling; Cui, Xiao-Jun; Rensberg, Jura; Wu, Kui; Wesch, Werner; Wendler, Elke

2017-10-01

We report on optical waveguide fabrication in a spinel MgGa2O4 crystal by 6.0 MeV carbon ion implantation at a fluence of 2 × 1015 ions/cm2 for the first time to our knowledge. The MgGa2O4 crystal was grown by the floating zone method. The refractive index profile reconstructed by reflectivity calculation method showed that the MgGa2O4 waveguide is a typical barrier waveguide. The typical barrier-shaped refractive index profile is attributed mainly to the nuclear energy deposition of the incident carbon ions into the MgGa2O4 crystal. By performing end-coupling measurements and using the beam propagation method (BPM) for the analysis of the observed modes, it can be concluded that the modes can be confined inside the waveguide.

68Ga-PSMA PET/MR-Positive, Histopathology-Proven Prostate Cancer in a Patient With Negative Multiparametric Prostate MRI.

PubMed

Muehlematter, Urs J; Rupp, Niels J; Mueller, Julian; Eberli, Daniel; Burger, Irene A

2018-05-25

Multiparametric MRI incorporating T2-weighted, diffusion-weighted, and dynamic contrast material-enhanced sequences is currently used for detection and localization of clinically important prostate cancer (PCa). The Ga-labeled PET tracer targeting the prostate-specific membrane antigen (PSMA, Ga-PSMA-11) is a promising diagnostic approach for staging and restating PCa. Recent studies suggest that Ga-PSMA could also be used for primary PCa detection and localization. We report a case of a Ga-PSMA PET/MR-positive lesion of the peripheral zone in a 73-year-old man with a negative preceding multiparametric MRI. Radical prostatectomy and subsequent histopathologic examination confirmed a Gleason 4 + 4 PCa.

Legal Services: The Army Legal Assistance Program

DTIC Science & Technology

1996-02-21

Army Regulation 27–3 Legal Services The Army Legal Assistance Program Headquarters Department of the Army Washington, DC 21 February 1996 REPORT...1996 to xx-xx-1996 4. TITLE AND SUBTITLE The Army Legal Assistance Program Unclassified 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...Z39.18 SUMMARY of CHANGE AR 27–3 The Army Legal Assistance Program This change 2 corrects the title page of this regulation. This change 2-- o Corrects

Local structure investigation of Ga and Yb dopants in Co 4 Sb 12 skutterudites

DOE PAGES

Hu, Yanyun; Chen, Ning; Clancy, J. P.; ...

2017-12-29

We report our x-ray absorption spectroscopy studies at both Ga K-edge and Yb L 2-edge to elucidate the local structure of Ga and Yb dopants in Yb xGa yCo 4Sb 12. Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24g site replacing Sb, and the other is the 2a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2a on-center site. At low concentrations of Yb,more » Ga 24g and Ga 2a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Mater. 23, 3194 (2013)]. The Ga 24g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24g site for the highest Yb concentration (x = 0.4). In addition to the local crystal structure evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K-edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga 2a to Ga 24g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co 4Sb 12 skutterudites is due to the increased Ga 24g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.« less

Local structure investigation of Ga and Yb dopants in Co 4 Sb 12 skutterudites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Yanyun; Chen, Ning; Clancy, J. P.

We report our x-ray absorption spectroscopy studies at both Ga K-edge and Yb L 2-edge to elucidate the local structure of Ga and Yb dopants in Yb xGa yCo 4Sb 12. Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24g site replacing Sb, and the other is the 2a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2a on-center site. At low concentrations of Yb,more » Ga 24g and Ga 2a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Mater. 23, 3194 (2013)]. The Ga 24g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24g site for the highest Yb concentration (x = 0.4). In addition to the local crystal structure evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K-edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga 2a to Ga 24g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co 4Sb 12 skutterudites is due to the increased Ga 24g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.« less

38 CFR 4.112 - Weight loss.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2010-07-01 2010-07-01 false Weight loss. 4.112 Section 4.112 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings The Digestive System § 4.112 Weight loss. For purposes of evaluating conditions...

38 CFR 4.112 - Weight loss.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2011-07-01 2011-07-01 false Weight loss. 4.112 Section 4.112 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings The Digestive System § 4.112 Weight loss. For purposes of evaluating conditions...

38 CFR 4.112 - Weight loss.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2014-07-01 2014-07-01 false Weight loss. 4.112 Section 4.112 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings The Digestive System § 4.112 Weight loss. For purposes of evaluating conditions...

38 CFR 4.112 - Weight loss.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2013-07-01 2013-07-01 false Weight loss. 4.112 Section 4.112 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings The Digestive System § 4.112 Weight loss. For purposes of evaluating conditions...

38 CFR 4.112 - Weight loss.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2012-07-01 2012-07-01 false Weight loss. 4.112 Section 4.112 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings The Digestive System § 4.112 Weight loss. For purposes of evaluating conditions...

Atomic structure of the GaAs(001)-c(4x4) surface: first-principles evidence for diversity of heterodimer motifs.

PubMed

Penev, E; Kratzer, P; Scheffler, M

2004-10-01

The GaAs(001)-c(4x4) surface was studied using ab initio atomistic thermodynamics based on density-functional theory calculations. We demonstrate that in a range of stoichiometries, between those of the conventional three As-dimer and the new three Ga-As-dimer models, there exists a diversity of atomic structures featuring Ga-As heterodimers. These results fully explain the experimental scanning tunneling microscopy images and are likely to be relevant also to the c(4x4)-reconstructed (001) surfaces of other III-V semiconductors.

Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)V4S8

NASA Astrophysics Data System (ADS)

Naik, I.

2018-01-01

Polycrystalline V4-cluster compounds of GaV4S8 and its derivatives Ga0.90 Cu0.10V4S8 and Ga0.90Cu0.20V4S8 have been prepared at 800°C by solid-state reaction method. Although the cubic-rhombohedral phase transformation at 45 K was found to be absent in the derivatives of GaV4S8, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in GaV4S8, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling.

Temperature dependence of single-crystal elastic constants of flux-grown alpha-GaPO(4).

PubMed

Armand, P; Beaurain, M; Rufflé, B; Menaert, B; Papet, P

2009-06-01

The lattice parameter change with respect to temperature (T) has been measured using high-temperature powder X-ray diffraction techniques for high-temperature flux-grown GaPO(4) single crystals with the alpha-quartz structure. The lattice and the volume linear thermal expansion coefficients in the temperature range 303-1173 K were computed from the X-ray data. The percentage linear thermal expansions along the a and c axes at 1173 K are 1.5 and 0.51, respectively. The temperature dependence of the mass density rho of flux-grown GaPO(4) single crystals was evaluated using the volume thermal expansion coefficient alpha(V)(T) = 3.291 x 10(-5) - 2.786 x 10(-8) [T] + 4.598 x 10(-11)[T](2). Single-crystal high-resolution Brillouin spectroscopy measurements have been carried out at ambient pressure from 303 to 1123 K to determine the elastic constants C(IJ) of high-temperature flux-grown GaPO(4) material. The single-crystal elastic moduli were calculated using the sound velocities via the measured Brillouin frequency shifts Deltanu(B). These are, to our knowledge, the highest temperatures at which single-crystal elastic constants of alpha-GaPO(4) have been measured. Most of the room-temperature elastic constant values measured on flux-grown GaPO(4) material are higher than the ones found for hydrothermally grown GaPO(4) single crystals. The fourth-order temperature coefficients of both the Brillouin frequency shifts T(nuB)((n)) and the single-crystal elastic moduli T(C(IJ))((n)) were obtained. The first-order temperature coefficients of the C(IJ) are in excellent agreement with previous reports on low-temperature hydrothermally grown alpha-GaPO(4) single crystals, while small discrepancies in the higher-order temperature coefficients are observed. This is explained in terms of the OH content in the GaPO(4) network, which is an important parameter in the crystal thermal behavior.

Local structure investigation of Ga and Yb dopants in Co4Sb12 skutterudites

NASA Astrophysics Data System (ADS)

Hu, Yanyun; Chen, Ning; Clancy, J. P.; Salvador, James R.; Kim, Chang-Yong; Shi, Xiaoya; Li, Qiang; Kim, Young-June

2017-12-01

We report comprehensive x-ray absorption spectroscopy studies at both the Ga K edge and Yb L2 edge to elucidate the local structure of Ga and Yb dopants in YbxGayCo4Sb12 . Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24 g site replacing Sb, and the other is the 2 a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2 a on-center site. At low concentrations of Yb, Ga24 g and Ga2 a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Funct. Mater. 23, 3194 (2013), 10.1002/adfm.201202571]. The Ga24 g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24 g site for the highest Yb concentration studied (x =0.4 ). In addition to the local structural evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K -edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga2 a to Ga24 g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co4Sb12 skutterudites is due to the increased Ga24 g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.

Adjusted poor weight gain for birth weight and gestational age as a predictor of severe ROP in VLBW infants.

PubMed

Aydemir, O; Sarikabadayi, Y U; Aydemir, C; Tunay, Z O; Tok, L; Erdeve, O; Oguz, S S; Uras, N; Dilmen, U

2011-06-01

To analyze relative weight gain by 2-week intervals up to 6 weeks after birth in order to predict the development of retinopathy of prematurity (ROP) requiring treatment among very low birth weight (BW) infants. A prospective study including infants with BW ≤1500 g born in a single tertiary intensive care unit over 1-year period was conducted. Body weight measurements were recorded weekly and relative weight gains (g/kg/day) were calculated. The main outcome was development of ROP requiring treatment. Mean BW and gestational age (GA) of the whole cohort were 1165±223 g and 29.3±2.3 weeks, respectively. Relative weight gain at 2 weeks and 4 weeks postnatal age were significantly lower in infants with severe ROP (P=0.041 and P=0.017, respectively). Relative weight gain at 6 weeks was not different between groups. Infants with severe ROP gained 6.7±4 g/kg/day in the first 4 weeks of life, compared with 9.3±4.5 g/kg/day for those with mild or no ROP. After adjusted for BW and GA in logistic regression poor relative weight gain in the first 4 weeks was found to be related to severe ROP (P=0.015). When all the other risk factors significant for severe ROP were included in the logistic regression poor weight gain did not arise as an independent risk factor. Poor postnatal weight gain in the first 4 weeks of life is the end result of several comorbidities rather than being an independent risk factor. Poor weight gain can be an additional predictor of severe ROP in very low BW infants.

K and Ba distribution in the structures of the clathrate compounds K(x)Ba(16-x)(Ga,Sn)136 (x = 0.8, 4.4, and 12.9) and K(x)Ba(8-x)(Ga,Sn)46 (x = 0.3).

PubMed

Schäfer, Marion C; Bobev, Svilen

2013-04-01

Studies of the K-Ba-Ga-Sn system produced the clathrate compounds K(0.8(2))Ba(15.2(2))Ga(31.0(5))Sn(105.0(5)) [a = 17.0178 (4) Å], K(4.3(3))Ba(11.7(3))Ga(27.4(4))Sn(108.6(4)) [a = 17.0709 (6) Å] and K(12.9(2))Ba(3.1(2))Ga(19.5(4))Sn(116.5(4)) [a = 17.1946 (8) Å], with the type-II structure (cubic, space group Fd3m), and K(7.7(1))Ba(0.3(1))Ga(8.3(4))Sn(37.7(4)) [a = 11.9447 (4) Å], with the type-I structure (cubic, space group Pm3n). For the type-II structures, only the smaller (Ga,Sn)24 pentagonal dodecahedral cages are filled, while the (Ga,Sn)28 hexakaidecahedral cages remain empty. The unit-cell volume is directly correlated with the K:Ba ratio, since an increasing amount of monovalent K occupying the cages causes a decreasing substitution of the smaller Ga in the framework. All three formulae have an electron count that is in good agreement with the Zintl-Klemm rules. For the type-I compound, all framework sites are occupied by a mixture of Ga and Sn atoms, with Ga showing a preference for Wyckoff site 6c. The (Ga,Sn)20 pentagonal dodecahedral cages are occupied by statistically disordered K and Ba atoms, while the (Ga,Sn)24 tetrakaidecahedral cages encapsulate only K atoms. Large anisotropic displacement parameters for K in the latter cages suggest an off-centering of the guest atoms.

2.4 Micron Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave IR Applications

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, Nurul; Sulima, Oleg V.; Swaminathan, Krishna; Ismail, Syed; Singh, Upendra N.

2006-01-01

Shortwave infrared detectors are critical for several applications including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain, which limits their detectivity. The characterization results of an AlGaAsSb/InGaAsSb phototransistor for shortwave IR application are reported. The phototransistor is grown using molecular beam epitaxy technique. Spectral response measurements showed a uniform responsivity between 1.2 and 2.4 micron region with a mean value of 1000 A/W. A maximum detectivity of 3.4 X 10(exp 11) cmHz1/2/W was obtained at 2 micron at -20 C and 1.3 V.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua

2017-11-01

Ga2O3 with a wide bandgap of ˜ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It's also demonstrated that the CuGa2O4 film has a bandgap of ˜ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Liu, Yan; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao

2017-11-01

A method to determine the strain distribution of the AlGaN barrier layer after the device fabrication and the passivation process has been presented. By fitting the calculated parasitic source access resistance with the measured ones for the AlGaN/AlN/GaN HFETs and using the polarization Coulomb field scattering theory, the strain variation of the AlGaN barrier layer after the passivation process has been quantitatively studied. The results show that the tensile strain in the access regions of the AlGaN barrier layer has been increased by 4.62% for the 250 nm-Si3N4 passivated device, and has been decreased by 2.0% for the 400 nm-Si3N4 passivated device, compared to that of before the passivation, respectively. For the gate region of the two devices, the tensile strain has been decreased by 60.77% and increased by 3.60% after the passivation of different thicknesses, oppositely.

Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.

2016-10-15

The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without themore » insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.« less

Localization of Hidden Insulinomas with ⁶⁸Ga-DOTA-Exendin-4 PET/CT: A Pilot Study.

PubMed

Antwi, Kwadwo; Fani, Melpomeni; Nicolas, Guillaume; Rottenburger, Christof; Heye, Tobias; Reubi, Jean Claude; Gloor, Beat; Christ, Emanuel; Wild, Damian

2015-07-01

(111)In-DOTA-exendin-4 SPECT/CT has been shown to be highly efficient in the detection of insulinomas. We aimed at determining whether novel PET/CT imaging with [Nle(14),Lys(40)(Ahx-DOTA-(68)Ga)NH2]exendin-4 ((68)Ga-DOTA-exendin-4) is feasible and sensitive in detecting benign insulinomas. (68)Ga-DOTA-exendin-4 PET/CT and (111)In-DOTA-exendin-4 SPECT/CT were performed in a randomized cross-over order on 5 patients with endogenous hyperinsulinemic hypoglycemia. The gold standard for comparison was the histologic diagnosis after surgery. In 4 patients histologic diagnosis confirmed a benign insulinoma, whereas one patient refused surgery despite a positive (68)Ga-DOTA-exendin-4 PET/CT scan. In 4 of 5 patients, previously performed conventional imaging (CT or MR imaging) was not able to localize the insulinoma. (68)Ga-DOTA-exendin-4 PET/CT correctly identified the insulinoma in 4 of 4 patients, whereas (111)In-DOTA-exendin-4 SPECT/CT correctly identified the insulinoma in only 2 of 4 patients. These preliminary data suggest that the use of (68)Ga-DOTA-exendin-4 PET/CT in detecting hidden insulinomas is feasible. © 2015 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

NASA Astrophysics Data System (ADS)

Gomis, O.; Vilaplana, R.; Manjón, F. J.; Santamaría-Pérez, D.; Errandonea, D.; Pérez-González, E.; López-Solano, J.; Rodríguez-Hernández, P.; Muñoz, A.; Tiginyanu, I. M.; Ursaki, V. V.

2013-02-01

In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite structure. We have carried out high-pressure x-ray diffraction measurements up to 13.2 GPa. Our measurements have been complemented and compared with total-energy ab initio calculations. The equation of state and the axial compressibilities for the low-pressure phase of HgGa2Se4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The theoretical cation-anion and vacancy-anion distances in HgGa2Se4 have been determined. The internal distance compressibility in HgGa2Se4 has been compared with those that occur in binary HgSe and ɛ-GaSe compounds. It has been found that the Hg-Se and Ga-Se bonds behave in a similar way in the three compounds. It has also been found that bulk compressibility of the compounds decreases following the sequence "ɛ-GaSe > HgGa2Se4 > HgSe." Finally, we have studied the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2Se4. Our calculations report that the low-pressure phase of HgGa2Se4 becomes mechanically unstable above 13.3 GPa.

Two new phases in the ternary RE-Ga-S systems with the unique interlinkage of GaS4 building units: synthesis, structure, and properties.

PubMed

Lin, Hua; Shen, Jin-Ni; Zhu, Wei-Wei; Liu, Yi; Wu, Xin-Tao; Zhu, Qi-Long; Wu, Li-Ming

2017-10-17

Two novel ternary rare-earth chalcogenides, Yb 6 Ga 4 S 15 and Lu 5 GaS 9 , have been prepared by solid-state reactions of an elemental mixture at high temperatures. Their structures were determined on the basis of single-crystal X-ray diffraction. Yb 6 Ga 4 S 15 crystallizes in the monoclinic space group C2/m (no.12) [a = 23.557(2) Å, b = 3.7664(4) Å, c = 12.466(1) Å, β = 90.915(9)°, V = 1105.9(2) Å 3 and Z = 2], whereas Lu 5 GaS 9 crystallizes in the triclinic space group P1[combining macron] (no.2) [a = 7.735(3) Å, b = 10.033(4) Å, c = 10.120(4) Å, α = 106.296(4)°, β = 100.178(5)°, γ = 101.946(3)°, V = 714.1(5) Å 3 and Z = 2]. Both the structures feature complicated three dimensional frameworks with the unique interlinkages of GaS 4 as basic building units. Significantly, photo-electrochemical measurements indicated that title compounds were photoresponsive under visible-light illumination. Furthermore, the UV-visible-near IR diffuse reflectance spectra, thermal stabilities, electronic structures, physical properties as well as a structure change trend of the ternary rare-earth/gallium/sulfur compounds have been evaluated.

Over-the-Counter and Out-of-Control: Legal Strategies to Protect Youths From Abusing Products for Weight Control

PubMed Central

Taylor, Lisa M.; Austin, S. Bryn

2013-01-01

Abuse of widely available, over-the-counter drugs and supplements such as laxatives and diet pills for weight control by youths is well documented in the epidemiological literature. Many such products are not medically recommended for healthy weight control or are especially susceptible to abuse, and their misuse can result in serious health consequences. We analyzed the government’s role in regulating these products to protect public health. We examined federal and state regulatory authority, and referred to international examples to inform our analysis. Several legal interventions are indicated to protect youths, including increased warnings and restrictions on access through behind-the-counter placement or age verification. We suggest future directions for governments internationally to address this pervasive public health problem. PMID:23237149

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

PubMed

Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon

2013-01-01

We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.

A sodium gallophosphate with an original tunnel structure: NaGa 2(OH)(PO 4) 2

NASA Astrophysics Data System (ADS)

Guesdon, A.; Monnin, Y.; Raveau, B.

2003-05-01

A new sodium gallophosphate, NaGa 2(OH)(PO 4) 2, has been obtained by hydrothermal synthesis under autogeneous pressure at 473 K. It crystallizes in the P2 1/ n space group with the cell parameters a=8.9675(8) Å, b=8.9732(5) Å, c=9.2855(7) Å, β=114.812(6)°, V=678.2 Å 3 ( Z=4). In its original three-dimensional framework, monophosphate groups share their apices with [Ga 4O 16(OH) 2] tetrameric units, which are built from two GaO 5(OH) octahedra and two GaO 4(OH) trigonal bipyramids. The sodium cations are located in tunnels running along a, whereas the tunnels running along b are empty.

New structure type in the mixed-valent compound YbCu4Ga8.

PubMed

Subbarao, Udumula; Gutmann, Matthias J; Peter, Sebastian C

2013-02-18

The new compound YbCu(4)Ga(8) was obtained as large single crystals in high yield from reactions run in liquid gallium. Preliminary investigations suggest that YbCu(4)Ga(8) crystallizes in the CeMn(4)Al(8) structure type, tetragonal space group I4/mmm, and lattice constants are a = b = 8.6529(4) Å and c = 5.3976(11) Å. However, a detailed single-crystal XRD revealed a tripling of the c axis and crystallizing in a new structure type with lattice constants of a = b = 8.6529(4) Å and c = 15.465(1) Å. The structural model was further confirmed by neutron diffraction measurements on high-quality single crystal. The crystal structure of YbCu(4)Ga(8) is composed of pseudo-Frank-Kasper cages occupying one ytterbium atom in each ring which are shared through the corner along the ab plane, resulting in a three-dimensional network. The magnetic susceptibility of YbCu(4)Ga(8) investigated in the temperature range 2-300 K showed Curie-Weiss law behavior above 100 K, and the experimentally measured magnetic moment indicates mixed-valent ytterbium. Electrical resistivity measurements show the metallic nature of the compound. At low temperatures, variation of ρ as a function of T indicates a possible Fermi-liquid state at low temperatures.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Influence of Ga-concentration on the electrical and magnetic properties of magnetoelectric CoGa xFe 2–xO 4/BaTiO 3 composite

DOE PAGES

Ni, Yan; Zhang, Zhen; Nlebedim, Cajetan I.; ...

2015-03-20

Multiferroic materials exhibit magnetoelectric (ME) coupling and promise new device applications including magnetic sensors, generators, and filters. An effective method for developing ME materials with enhanced ME effect is achieved by the coupling through the interfacial strain between piezoelectric and magnetostrictive materials. In this study, the electrical and magnetic properties of Ga doped magnetoelectric CoGa xFe 2–xO 4/BaTiO 3 composite are studied systematically. It is found that Ga doping improves the sensitivity of magnetoelastic response and stabilizes the magnetic phase of the composites. More importantly, Ga doping reduces the electrical conductivity of composite, as well as the dielectric loss. Anmore » enhancement of the electrostrain with doping Ga is also observed. Quantitative estimation indicates that magnetoelectric coupling is enhanced for Ga-doped CoGa xFe 2–xO 4/BaTiO 3 composites. As a result, the present work is beneficial to the practical application of composite CoFe 2O 4/BaTiO 3-based multiferroic materials.« less

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

Targeting CXCR4 with [68Ga]Pentixafor: a suitable theranostic approach in pleural mesothelioma?

PubMed

Lapa, Constantin; Kircher, Stefan; Schirbel, Andreas; Rosenwald, Andreas; Kropf, Saskia; Pelzer, Theo; Walles, Thorsten; Buck, Andreas K; Weber, Wolfgang A; Wester, Hans-Juergen; Herrmann, Ken; Lückerath, Katharina

2017-11-14

C-X-C motif chemokine receptor 4 (CXCR4) is a key factor for tumor growth and metastasis in several types of human cancer. This study investigated the feasibility of CXCR4-directed imaging with positron emission tomography/computed tomography (PET/CT) using [ 68 Ga]Pentixafor in malignant pleural mesothelioma. Six patients with pleural mesothelioma underwent [ 68 Ga]Pentixafor-PET/CT. 2'-[ 18 F]fluoro-2'-deoxy-D-glucose ([ 18 F]FDG)-PET/CT (4/6 patients) and immunohistochemistry obtained from biopsy or surgery (all) served as standards of reference. Additionally, 9 surgical mesothelioma samples were available for histological work-up. Whereas [ 18 F]FDG-PET depicted active lesions in all patients, [ 68 Ga]Pentixafor-PET/CT recorded physiologic tracer distribution and none of the 6 patients presented [ 68 Ga]Pentixafor-positive lesions. This finding paralleled results of immunohistochemistry which also could not identify relevant CXCR4 surface expression in the samples analyzed. In contrast to past reports, our data suggest widely absence of CXCR4 expression in pleural mesothelioma. Hence, robust cell surface expression should be confirmed prior to targeting this chemokine receptor for diagnosis and/or therapy.

[The status of protein intake and energy supply in the early life of very/extremely low birth weight infants].

PubMed

Bi, Chun-Yu; Ru, Xi-Fang; Feng, Qi; Wang, Ying; Zhang, Xin; Li, Xing; Meng, Jing-Wen

2013-05-01

To study the relationship of protein intake and energy supply with the physical growth in very/extremely low birth weight infant at their early life. Retrospective survey was performed in Neonatal Intensive Care Unit (NICU) in Peking University First Hospital. Inclusion criteria were preterm infant, birth weight < 1500 g, hospitalization for longer than 2 weeks, discharge with body weight greater than 1800 g. The infants were divided into two groups according to gestational age (GA). GA < 32 weeks and ≥ 32 weeks. Physical growth and its relation with the protein intake and energy supply were analyzed. The predictive value of serum blood urea nitrogen (BUN) on protein intake was studied. Ninety-three very/extremely low birth weight infants were involved, 69 in GA < 32 weeks group and 24 in GA ≥ 32 weeks group.Compared with GA ≥ 32 group, GA < 32 weeks preterm infants had more weight loss, (9.2 ± 4.4)% vs. (5.0 ± 3.1)%, P = 0.000; slower birth weight recovery (10.6 ± 3.8) d vs. (7.1 ± 2.6) d, P = 0.000; poorer weight gain at 1, 4, 5 weeks of life, (-4.5 ± 9.3) g/ (kg·d) vs. (3.4 ± 6.9) g/ (kg·d), P = 0.000 , (13.5 ± 7.3) g/ (kg·d) vs. (19.2 ± 4.9) g/ (kg·d), P = 0.001, (14.6 ± 5.6) g/ (kg·d) vs. (18.2 ± 4.5) g/ (kg·d), P = 0.031; less energy supply at 1 to 5 weeks (P value was 0.000,0.000,0.025,0.001,0.008 respectively) and less protein intake at 1, 4, 5 weeks of life (P value was 0.009,0.006,0.032). Extrauterine growth retardation (EUGR) was still predominant in our subjects, 47.8% in GA < 32 weeks group, and 95.8% in GA ≥ 32 weeks group, P = 0.000. The incidence increased greater in GA < 32 weeks infants, 43.5% vs. 20.8%, P = 0.000.The duration of weight loss and mechanical ventilation correlated negatively with weight gain rate, respectively β = -0.591, P = 0.000 and β = -0.281, P = 0.005; the average energy supply and time taken to reach full enteral feeding were factors improving weight gain, respectively β = 0.202, P = 0.021 and �

NWA 7034 Martian Breccia: Disturbed Rb-Sr Systematics, Preliminary Is Approximately 4.4 Ga Sm-Nd Age

NASA Technical Reports Server (NTRS)

Nyquist, L. E.; Shih, C.-Y.; Peng, Zhan Xiong; Agee, C

2013-01-01

Agee et al. [1] reported a Rb-Sr age of 2.089 [plus or minus] 0.081 Ga for the unique Martian meteoritic breccia NWA 7034 making it the oldest Martian basalt, dating to the early Am-azonian epoch [2] of Martian geologic history. We have attempt-ed to confirm this exciting result. Our new Rb-Sr analyses show the Rb-Sr isotopic system to be disturbed, but preliminary Sm-Nd data suggest an even older age of approximately 4.4 Ga for at least some brec-cia components.

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

First principles investigation of GaNbO{sub 4} as a photocatalytic material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Neelam, E-mail: sneelam@issc.unipune.ac.in; Verma, Mukta; Shah, Vaishali

We have performed first principles density functional total energy calculations on pure and doped GaNbO{sub 4} to investigate its applicability as a photo catalyst. Pure GaNbO{sub 4} is an indirect, wide band gap semiconductor similar to the widely investigated TiO{sub 2} which is known to be a photo catalyst in UV light [K. Yang et. al. Chem. Mater. 20, 6528 (2008)]. S atom doping of TiO{sub 2} reduces the band gap [F. Tian et. al. J. Phys. Chem. B 110, 17866 (2006)], and increases its efficiency in the visible light range. It has been experimentally reported that S doping ofmore » GaNbO{sub 4} at the O site, decreases its photo catalytic efficiency. Our band structure calculations show that both pure and doped GaNbO{sub 4} have indirect band gaps and S atom doping reduces the band gap in agreement with experiments. The decrease in the band gap is due to the lowering of the conduction band minimum towards the Fermi level. An unequal reduction in the band gap was observed at the four inequivalent O sites chosen for S doping. This suggests that the photo catalytic activity varies with the dopant site.« less

Dimensionality tuning of the electronic structure in Fe3Ga4 magnetic materials

NASA Astrophysics Data System (ADS)

Moura, K. O.; de Oliveira, L. A. S.; Rosa, P. F. S.; Jesus, C. B. R.; Saleta, M. E.; Granado, E.; Béron, F.; Pagliuso, P. G.; Pirota, K. R.

2016-06-01

This work reports on the dimensionality effects on the magnetic behavior of Fe3Ga4 compounds by means of magnetic susceptibility, electrical resistivity, and specific heat measurements. Our results show that reducing the Fe3Ga4 dimensionality, via nanowire shape, intriguingly modifies its electronic structure. In particular, the bulk system exhibits two transitions, a ferromagnetic (FM) transition temperature at T1 = 50 K and an antiferromagnetic (AFM) one at T2 = 390 K. On the other hand, nanowires shift these transition temperatures, towards higher and lower temperature for T1 and T2, respectively. Moreover, the dimensionality reduction seems to also modify the microscopic nature of the T1 transition. Instead of a FM to AFM transition, as observed in the 3D system, a transition from FM to ferrimagnetic (FERRI) or to coexistence of FM and AFM phases is found for the nanowires. Our results allowed us to propose the magnetic field-temperature phase diagram for Fe3Ga4 in both bulk and nanostructured forms. The interesting microscopic tuning of the magnetic interactions induced by dimensionality in Fe3Ga4 opens a new route to optimize the use of such materials in nanostructured devices.

Dimensionality tuning of the electronic structure in Fe3Ga4 magnetic materials

PubMed Central

Moura, K. O.; de Oliveira, L. A. S.; Rosa, P. F. S.; Jesus, C. B. R.; Saleta, M. E.; Granado, E.; Béron, F.; Pagliuso, P. G.; Pirota, K. R.

2016-01-01

This work reports on the dimensionality effects on the magnetic behavior of Fe3Ga4 compounds by means of magnetic susceptibility, electrical resistivity, and specific heat measurements. Our results show that reducing the Fe3Ga4 dimensionality, via nanowire shape, intriguingly modifies its electronic structure. In particular, the bulk system exhibits two transitions, a ferromagnetic (FM) transition temperature at T1 = 50 K and an antiferromagnetic (AFM) one at T2 = 390 K. On the other hand, nanowires shift these transition temperatures, towards higher and lower temperature for T1 and T2, respectively. Moreover, the dimensionality reduction seems to also modify the microscopic nature of the T1 transition. Instead of a FM to AFM transition, as observed in the 3D system, a transition from FM to ferrimagnetic (FERRI) or to coexistence of FM and AFM phases is found for the nanowires. Our results allowed us to propose the magnetic field-temperature phase diagram for Fe3Ga4 in both bulk and nanostructured forms. The interesting microscopic tuning of the magnetic interactions induced by dimensionality in Fe3Ga4 opens a new route to optimize the use of such materials in nanostructured devices. PMID:27329581

Plasminogen activator inhibitor 1 4G/5G and -844G/A variants in idiopathic recurrent pregnancy loss.

PubMed

Magdoud, Kalthoum; Herbepin, Viviana G; Touraine, Renaud; Almawi, Wassim Y; Mahjoub, Touhami

2013-09-01

Plasminogen activator inhibitor type 1 (PAI-1) regulates fibrinolysis, and the common promoter region variants -675G/A (4G/5G) and -844G/A are associated with increased thrombotic risk. Despite evidence linking altered fibrinolysis with adverse pregnancy events, including idiopathic recurrent pregnancy loss (RPL), the contribution of PAI-1 variants to RPL risk remains controversial. We investigated the association between the PAI-1 -844G/A and 4G/5G (-675G/A) variants with altered risk of RPL. This was a case-control study involving 304 women with confirmed RPL and 371 age- and ethnically matched control women. PAI-1 genotyping was performed by PCR single-specific primer -675 (G/A) and real-time PCR (-844G/A) analysis. Minor allele frequency (MAF) of 4G/5G (P < 0.001), but not -844G/A (P = 0.507), was higher in RPL cases. PAI-1 4G/5G single-nucleotide polymorphism (SNP) was significantly associated with RPL under additive, dominant, and recessive genetic models; no association of -844G/A with RPL was seen irrespective of the genetic model tested. Taking common -844G/5G haplotype as reference (OR = 1.00), multivariate analysis confirmed the association of 4G-containing -844A/4G (P < 0.001) and -844G/4G (P = 0.011) haplotypes with increased RPL risk. 4G/5G, but not -844G/A, PAI-1 variant is associated with an increased risk of RPL. © 2013 John Wiley & Sons Ltd.

Na8Au9.8(4)Ga7.2 and Na17Au5.87(2)Ga46.63: The diversity of pseudo 5-fold symmetries in the Na-Au-Ga system

NASA Astrophysics Data System (ADS)

Smetana, Volodymyr; Corbett, John D.; Miller, Gordon J.

2013-11-01

The Na-rich part (~30% Na) of the Na-Au-Ga system between NaAu2, NaGa4, and Na22Ga39 has been found to contain the ternary phases Na8Au9.8(4)Ga7.2 (I) and Na17Au5.87(2)Ga46.63 (II), according to the results of single crystal X-ray diffraction measurements. I is orthorhombic, Cmcm, a=5.3040(1), b=24.519(5), c=14.573(3) Å, and contains a network of clusters with local 5-fold symmetry along the a-axis. Such clusters are frequent building units in decagonal quasicrystals and their approximants. II is rhombohedral, R3¯m, a=16.325(2), c=35.242(7) Å, and contains building blocks that are structurally identical to the Bergman-type clusters as well as fused icosahedral units known with active metals, triels and late transition elements. II also contains a polycationic network with elements of the clathrate V type structure. Tight-binding electronic structure calculations using linear muffin-tin-orbital (LMTO) methods on idealized models of I and II indicate that both compounds are metallic with evident pseudogaps at the corresponding Fermi levels. The overall Hamilton bond populations are generally dominated by Au-Ga and Au-Au bonds in I and by Ga-Ga bonds in II; moreover, the Na-Au and Na-Ga contributions in I are unexpectedly large, ~20% of the total. A similar involvement of sodium in covalent bonding has also been found in the electron-richer i-Na13Au12Ga15 quasicrystal approximant.

Support for Marijuana Legalization and Predictors of Intentions to Use Marijuana More Often in Response to Legalization Among U.S. Young Adults.

PubMed

Cohn, Amy M; Johnson, Amanda L; Rose, Shyanika W; Rath, Jessica M; Villanti, Andrea C

2017-01-28

As of 2015, more than half of U.S. states have legalized, medicalized, or decriminalized marijuana. This study examined the prevalence and correlates of support for marijuana legalization in a national sample of young adults and the intention to use marijuana more frequently if it were legalized. Data were from Wave 7 (weighted N = 3532) of the Truth Initiative Young Adult Cohort, a national sample of men and women aged 18-34. We assessed demographics, past 30-day substance (alcohol, tobacco, marijuana, other drug use), depression and anxiety, social smoking, marijuana harm perceptions (relative to cigarettes), and state-level marijuana policies as correlates of support for marijuana legalization and intentions to use marijuana more often if it were legalized. Multivariable models of correlates of support for legalization and intentions to use marijuana were conducted separately for the full sample and for nonmarijuana users. Weighted estimates showed that 39% of the full sample and 9% of nonmarijuana users supported marijuana legalization. Multivariable models showed that lower marijuana harm perceptions and lifetime and past 30-day tobacco use were common predictors of support for marijuana legalization and intentions to use marijuana among non-users of marijuana. Conclusions/Importance: Over a third of the sample supported marijuana legalization. Tobacco use and perceptions that marijuana is less harmful than cigarettes were robust risk correlates of support for marijuana legalization and intentions to use more frequently among nonusers. Public health campaigns should target these factors to deter marijuana-related harm in susceptible young adults.

Co/Cr co-doped MgGa{sub 2}O{sub 4} nanoparticles: Microstructure and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Xiulan, E-mail: xlduan@sdu.edu.cn; Liu, Jian; Yu, Fapeng

2016-01-15

Graphical abstract: The Ga 2p{sub 3/2} spectra consist of two peaks, corresponding to Ga{sup 3+} ions placed at octahedral and tetrahedral sites, respectively. The fraction of tetrahedral Ga{sup 3+} ions (∼1117 eV) increases with increasing doping concentration. - Highlights: • Structural and properties of Co{sup 2+}/Cr{sup 3+}: MgGa{sub 2}O{sub 4} nanoparticles were characterized. • The distribution of cations was studied using XPS. • The inversion degree increased with increasing content of doping ions. • The doping concentration has also effect on absorption and emission properties. • Optical properties of nanoparticles were discussed based on the structural results. - Abstract: MgGa{submore » 2}O{sub 4} nanoparticles co-doped with Co{sup 2+}/Cr{sup 3+} ions were prepared by a citrate sol–gel method. Their microstructure and optical properties were studied using X-ray powder diffraction (XRD), infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), absorption and fluorescence spectroscopy. MgGa{sub 2}O{sub 4} nanoparticles with the size of 10–30 nm were obtained when the precursor was annealed at 800 °C. Results indicated that Ga{sup 3+} and Mg{sup 2+} cations occupied the octahedral sites as well as the tetrahedral sites in samples. The inversion degree of Ga or Mg increased with increasing content of doping ions. Absorption spectra indicated that Co{sup 2+} and Cr{sup 3+} ions entered both the tetrahedral and octahedral sites of spinel structure by substituting Mg{sup 2+} and Ga{sup 3+} ions, respectively. Emission spectra of the co-doped MgGa{sub 2}O{sub 4} showed a broad emission band peaking at 700 and 680 nm, relevant to the emission characteristic of octahedral Cr{sup 3+} and tetrahedral Co{sup 2+} ions.« less

Physical activity during pregnancy and infant's birth weight: results from the 3D Birth Cohort.

PubMed

Bisson, Michèle; Croteau, Jordie; Guinhouya, Benjamin C; Bujold, Emmanuel; Audibert, François; Fraser, William D; Marc, Isabelle

2017-01-01

To evaluate the association between maternal physical activity and infant's birth weight or risk of inappropriate weight for gestational age (GA), and whether this association differs by infant's sex, maternal body mass index (BMI) or pregnancy complications in a prospective cohort study. 1913 pregnant women from the 3D Birth Cohort (Québec, Canada) completed the Pregnancy Physical Activity Questionnaire at each trimester. Energy expenditure (metabolic equivalent of task (MET)*hours/week) for total activity, sports and exercise and vigorous intensity activities was calculated. The associations with birth weight and risk of inappropriate weight for GA were evaluated by regression modelling. Interactions were tested with infant's sex, maternal prepregnancy BMI, gestational diabetes, hypertensive disorders and prematurity. Each 1 MET/hours/week increase in sports and exercise in the first trimester was associated with a 2.5 g reduction in infant's birth weight (95% CI -4.8 to -0.3) but was not associated with the risk of small weight for GA. In contrast, although not significant, a 17% reduction in the risk of large weight for GA was observed with increasing sports and exercise. Furthermore, in women with subsequent pre-eclampsia (but not normotensive or hypertensive women), each 1 MET/hours/week increment spent in any vigorous exercise in the first trimester reduced the infant's birth weight by 19.8 g (95% CI -35.2 to -4.3). Pregnant women with higher sports and exercise levels in the first trimester delivered infants with a lower birth weight. The risk of reducing infant's birth weight with vigorous exercise in women who develop pre-eclampsia later in pregnancy requires evaluation.

NO2 Gas Sensing Properties of Multiple Networked ZnGa2O4 Nanorods Coated with TiO2.

PubMed

An, Soyeon; Park, Sunghoon; Ko, Hyunsung; Jin, Changhyun; Lee, Chongmu

2015-01-01

The NO2 gas sensing properties of ZnGa2O4-TiO2 heterostructure nanorods was examined. ZnGa2O4-core/TiO2-shell nanorods were fabricated by the thermal evaporation of a mixture of Zn and GaN powders and the sputter deposition of TiO2. Multiple networked ZnGa2O4-core/TiO2-shell nanorod sensors showed the response of 876% at 10 ppm NO2 at 300 degrees C. This response value at 10 ppm NO2 is approximately 4 times larger than that of bare ZnGa2O4 nanorod sensors. The response values obtained by the ZnGa2O4-core/TiO2-shell nanorods in this study are more than 13 times higher than those obtained previously by the SnO2-core/ZnO-shell nanofibers at 5% NO2. The significant enhancement in the response of ZnGa2O4 nanorods to NO2 gas by coating them with TiO2 can be explained based on the space-charge model.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Cation distribution and optical properties of Cr-doped MgGa2O4 nanocrystals

NASA Astrophysics Data System (ADS)

Duan, Xiulan; Liu, Jian; Wang, Xinqiang; Jiang, Huaidong

2014-11-01

The distribution of cations in the spinel-type MgCr2yGa2-2yO4 (y = 0-0.6) nanocrystals and their optical properties as a function of annealing temperature and chromium content were investigated by using X-ray photoelectron spectroscopy (XPS) in combination with absorption spectroscopy. The cations in MgCr2yGa2-2yO4 nanocrystals are disorderly distributed with mixing of divalent and trivalent cations occupying the tetrahedral and octahedral sites. With the increase of annealing temperature, the inversion parameter (the fraction of Mg2+ ions in octahedral sites) decreases, which has the same varying tendency with the proportion of tetrahedral Ga3+ or Cr3+ ions. The inversion parameter increases with increasing Cr3+ concentration. The absorption spectra indicate that Cr3+ ions are located in the octahedral sites as well as in the tetrahedral sites. The fraction of tetrahedral Cr3+ decreases with Cr-enrichment. The optical absorption properties of Cr-doped MgGa2O4 nanocrystals may be tuned by varying the preparation temperature or Cr concentration.

Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shang Gao

2015-11-30

A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJmore » and peak power of 2.8 kW. (control of laser radiation parameters)« less

Technology requirements for GaAs photovoltaic arrays

NASA Technical Reports Server (NTRS)

Scott-Monck, J.; Rockey, D.

1981-01-01

An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

Quaternary non-centrosymmetric sulfide Y4GaSbS9: Syntheses, structures, optical properties and theoretical studies

NASA Astrophysics Data System (ADS)

Wang, Yue; Zou, Xiaochuan; Feng, Xia; Shi, Yongfang; Wu, Liming

2017-01-01

A new rare-earth metal gallium thioantimonate, Y4GaSbS9, has been synthesized successfully via high-temperature solid-state method. Single-crystal X-ray diffraction analyses revealed it adopted a known RE4GaSbS9-structure type in the orthorhombic space group Aba2 (no.41) with a=13.480(4) Å, b=13.790(4) Å, c=13.990(4) Å, V=2600.6(2) Å3 and Z=8. The structure is composed of bimetallic polar (Sb2S5) units and dimeric (GaS4)2 tetrahedra that share vertexes to form a 1D infinite chains 2 ∞ 1Ga 10-, inside which the isolated Y3+ cations and S2- anions. Polycrystalline Y4GaSbS9 shows the weak powder second harmonic generation (SHG) responses of this family, which is about 7.5 times that of the benchmark α-SiO2 in the particle size of 74-106 μm at the laser radiation wavelength of 2050 nm with a non-phase-matchable behavior. In addition, the synthesis, structural characterization, and optical properties as well as theoretical studies are also discussed.

45 CFR 1621.4 - Complaints by clients about manner or quality of legal assistance.

Code of Federal Regulations, 2014 CFR

2014-10-01

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45 CFR 1621.4 - Complaints by clients about manner or quality of legal assistance.

Code of Federal Regulations, 2013 CFR

2013-10-01

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45 CFR 1621.4 - Complaints by clients about manner or quality of legal assistance.

Code of Federal Regulations, 2012 CFR

2012-10-01

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45 CFR 1621.4 - Complaints by clients about manner or quality of legal assistance.

Code of Federal Regulations, 2010 CFR

2010-10-01

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45 CFR 1621.4 - Complaints by clients about manner or quality of legal assistance.

Code of Federal Regulations, 2011 CFR

2011-10-01

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Layered Structures and Disordered Polyanionic Nets in the Cation-Poor Polar Intermetallics CsAu 1.4 Ga 2.8 and CsAu 2 Ga 2.6

DOE PAGES

Smetana, Volodymyr; Steinberg, Simon; Mudring, Anja-Verena

2016-12-27

Gold intermetallics are known for their unusual structures and bonding patterns. Two new compounds have been discovered in the cation-poor part of the Cs–Au–Ga system. We obtained both compounds directly by heating the elements at elevated temperatures. Structure determinations based on single-crystal X-ray diffraction analyses revealed two structurally and compositionally related formations: CsAu 1.4Ga 2.8 (I) and CsAu 2Ga 2.6 (II) crystallize in their own structure types (I: Rmore » $$\\bar{3}$$, a = 11.160(2) Å, c = 21.706(4) Å, Z = 18; II: R$$\\bar{3}$$, a = 11.106(1) Å, Å, c = 77.243(9) Å, Z = 54) and contain hexagonal cationic layers of cesium. Furthermore, this is a unique structural motif, which has never been observed for the other (lighter) alkali metals in combination with Au and post transition elements. The polyanionic part is characterized in contrast by Au/Ga tetrahedral stars, a structural feature that is characteristic for light alkali metal representatives, and disordered sites with mixed Au/Ga occupancies that occur in both structures with a more significant disorder in the polyanionic component of CsAu 2Ga 2.6. Examinations of the electronic band structure for a model approximating the composition of CsAu 1.4Ga 2.8 have been completed using density-functional-theory-based methods and reveal a deep pseudogap at E F. Bonding analysis by evaluating the crystal orbital Hamilton populations show dominant heteroatomic Au–Ga bonds and only a negligible contribution from Cs pairs.« less

33 CFR 401.4 - Maximum length and weight.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 3 2010-07-01 2010-07-01 false Maximum length and weight. 401.4 Section 401.4 Navigation and Navigable Waters SAINT LAWRENCE SEAWAY DEVELOPMENT CORPORATION, DEPARTMENT OF TRANSPORTATION SEAWAY REGULATIONS AND RULES Regulations Condition of Vessels § 401.4 Maximum length and weight...

Isothermal sections of the quasi-ternary systems Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} at 820 K and the physical properties of the ternary phases Ga{sub 5.5}In{sub 4.5}S{sub 15}, Ga{sub 6}In{sub 4}Se{sub 15} and Ga{sub 5.5}In{sub 4.5}S{sub 15}:Er{sup 3+}, Ga{sub 6}In{sub 4}Se{sub 15}:Er{sup 3+}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivashchenko, I.A., E-mail: Ivashchenko.Inna@eenu.edu.ua; Danyliuk, I.V.; Gulay, L.D.

Isothermal sections of the quasi-ternary systems Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} at 820 K were compared. Along the 50 mol% Ag{sub 2}S(Se), both systems feature continuous solid solutions with the chalcopyrite structure. Along the 17 mol% Ag{sub 2}S(Se), the interactions at the AgIn{sub 5}S(Se){sub 8}–'AgGa{sub 5}S(Se){sub 8}' sections are different. In the Ag{sub 2}S–Ga{sub 2}S{sub 3}–In{sub 2}S{sub 3} system the existence of the layered phase AgGa{sub x}In{sub 5–x}S{sub 8}, 2.25≤x≤2.85, was confirmed (S.G. P6{sub 3}mc). The Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system features the formation of solid solution (up to 53 mol% Ga{sub 2}Se{sub 3}) based on AgIn{submore » 5}Se{sub 8} (S.G. P-42m). Crystal structure, atomic coordinates were determined by powder diffraction method for samples from the homogeneity region of AgIn{sub 5}Se{sub 8}. Specific conductivities of the crystals Ga{sub 6}In{sub 4}Se{sub 15} (1.33·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.94}In{sub 3.96}Er{sub 0.1}Se{sub 15} (3.17·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.5}In{sub 4.5}S{sub 15} (7.94·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.46}In{sub 4.47}Er{sub 0.07}S{sub 15} (1·10{sup −9} Ω{sup −1} m{sup −1}) were measured at room temperature. Optical absorption and photoconductivity spectra were recorded in the range 400–760 nm. The introduction of erbium leads to an increase in the absorption coefficient and to the appearance of absorption bands at 530, 660, 810, 980, 1530 nm. - Highlights: • Nature of solid solutions in Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} (820 K) were discussed. • Crystal structures of ternary and quaternary compounds were discussed. • Specific conductivity, optical properties of four single crystals were measured. • Photoconductivity of the Ga{sub 5.5}In{sub 4.5}S{sub 15} in the range 400–760 nm were recorded.« less

Photoelectric properties of defect chalcogenide HgGa{sub 2}X{sub 4} (x=S, Se, Te)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini, E-mail: sharma.yamini62@gmail.com

2016-05-06

We present results of ab initio study of ordered vacancy compounds of mercury. The electronic structure, charge density, optical and transport properties of the semiconductor family HgGa{sub 2}X{sub 4} (X=S, Se, Te) are calculated using the full potential linearized augmented plane wave method which is based on the density functional theory. A direct bandgap is observed in these compounds, which reduces in the order S>Se>Te. From the density of states it is observed that there is strong hybridization of Hg-d, Ga-d and X-p states. The optical properties show a red shift with increasing size and atomic no. of the chalcogenidemore » atoms. We have also reported the transport properties of mercury thiogallates for the first time. The selenide compound exhibits n-type nature whereas HgGa{sub 2}S{sub 4} and HgGa{sub 2}Te{sub 4} show p-type behavior. The power factor and ZT for the HGS increases at low temperatures, the figure of merit is highest for HgGa{sub 2}Se{sub 4} (1.17) at 19 K.« less

Physical properties and spin excitations in the lacunar spinels AV4S8(A =Ga, Ge)

NASA Astrophysics Data System (ADS)

Pokharel, Ganesh; Christianson, Andrew; Mandrus, David; Liusuo Wu Team; Mark Lumsden Collaboration; Rupam Mukherjee Collaboration; Matthew Stone Collaboration; Georg Ehlers Collaboration

In the lacunar spinels AV4S8 (A = Ga, Ge), the interplay of spin, charge, and orbital degrees of freedom results in a complex phase diagram which includes: ferroelectric, orbitally ordered, and Néel type skyrmion phases. Below 12.7 K GaV4S8 exhibits cycloidal and ferromagnetic order and the application of a magnetic field results in a Néel type skyrmion spin structure. On the other hand, GeV4S8 orders antiferromagentically below 18 K. To illuminate the underlying physics driving the formation of these novel phases, we have measured the magnetization, resistivity, thermal conductivity, and inelastic neutron scattering spectrum of these spinels. The inelastic neutron scattering data shows broadened spin excitations which extend to 6 meV within the magnetically order phases for both GaV4S8 and GeV4S8. The similarity of the spectra for ferromagnetic GaV4S8 and antiferromagnetic GeV4S8 reflects the close balance of ferromagnetic and antiferromagnetic interactions in these materials. This research is funded by the Gordon and Betty Moore Foundation's EPIQS Initiative through Grant GBMF4416.

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

PubMed

Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Rai, A; Reuter, D; Wieck, A D; Micolich, A P

2013-08-14

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

Centrosymmetry vs noncentrosymmetry in La2Ga0.33SbS5 and Ce4GaSbS9 based on the interesting size effects of lanthanides: Syntheses, crystal structures, and optical properties

NASA Astrophysics Data System (ADS)

Zhao, Hua-Jun

2016-05-01

Two new quaternary sulfides La2Ga0.33SbS5 and Ce4GaSbS9 have been prepared from stoichiometric elements at 1223 K in an evacuated silica tube. Interestingly, La2Ga0.33SbS5 crystallizes in the centrosymmetric structure, while Ce4GaSbS9 crystallizes in the noncentrosymmetric structure, which show obvious size effects of lanthanides on the crystal structures of these two compounds. Ce4GaSbS9 belongs to RE4GaSbS9 (RE=Pr, Nd, Sm, Gd-Ho) structure type with a=13.8834(9) Å, b=14.3004(11) Å, c=14.4102(13) Å, V=2861.0(4) Å3. The structure features infinite chains of [Ga2Sb2S1110-]∞ propagating along a direction separated by Ce3+ cations and S2- anions. La2Ga0.33SbS5 adopts the family of La4FeSb2S10-related structure with a=7.5193(6) Å, c=13.4126(17) Å, V=758.35(13) Å3. Its structure is built up from the alternate stacking of La/Sb/S and La/Ga/S 2D building blocks. The La/Sb/S slabs consist of teeter-totter chains of Sb1S4 seesaws, which are connected via sharing the apexes of μ4-S1. Moreover, La1 is positionally disordered with Sb1 and stabilized in a bicapped trigonal prismatic coordination sphere. Between these La/Sb/S slabs, La2S8 square antiprisms are connected via edge-sharing into 2D building blocks, creating tetrahedral sites partially occupied by the Ga1 atoms. UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of La2Ga0.33SbS5 is about 1.76 eV.

Magnetometory Measurement of AlGaN/GaN 2DEG

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2004-03-01

AlGaN/GaN heterostructure devices have been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the magnetometory measurement of AlGaN/GaN 2DEG at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540 cm^2/Vs and 6.6 × 10^12 cm-2, respectively. When the temperature is lower than 4.5 K the hysteresis of magnetometric data is observed near zero magnetic field. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears and the slope of magnetometric data with respect to magnetic field becomes lower as obeying Currie-Weiss law. In general the hysteresis and Currie-Weiss law behavior in magnetometric data imply the possibility of the ferromagnetism, but the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Legal Services: Judge Advocate Legal Services

DTIC Science & Technology

1996-09-30

14–14, page 41 Publicity • 14–15, page 41 Insignia • 14–16, page 41 Chapter 15 Contract Law Attorneys, page 43 General • 15–1, page 43 General...Duties • 15–2, page 43 Management • 15–3, page 43 Principles of contract law practice • 15–4, page 43 Contract disputes and litigation support • 15–5...legal matters; and (2) Resolving their personal legal problems whenever possible. m. Contract law responsibilities. TJAG will provide— (1) Technical

Reduction of [Cp*Sb]4 with Subvalent Main-Group Metal Reductants: Syntheses and Structures of [(L1 Mg)4 (Sb4 )] and [(L2 Ga)2 (Sb4 )] Containing Edge-Missing Sb4 Units.

PubMed

Ganesamoorthy, Chelladurai; Krüger, Julia; Wölper, Christoph; Nizovtsev, Anton S; Schulz, Stephan

2017-02-16

[Cp*Sb] 4 (Cp*=C 5 Me 5 ) reacts with [L 1 Mg] 2 and L 2 Ga with formation of [(L 1 Mg) 4 (μ 4 ,η 1:2:2:2 -Sb 4 )] (L 1 =iPr 2 NC[N(2,6-iPr 2 C 6 H 3 )] 2 , 1) and [(L 2 Ga) 2 (μ,η 2:2 -Sb 4 )] (L 2 =HC[C(Me)N(2,6-iPr 2 C 6 H 3 )] 2 , 2). The cleavage of the Sb-Sb and Sb-C bonds in [Cp*Sb] 4 are the crucial steps in both reactions. The formation of 1 occurred by elimination of the Cp* anion and formation of Cp*MgL 1 , while 2 was formed by reductive elimination of Cp* 2 and oxidative addition of L 2 Ga to the Sb 4 unit. 1 and 2 were characterized by heteronuclear NMR spectroscopy and single-crystal X-ray diffraction, and their bonding situation was studied by quantum chemical calculations. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Unusual superconducting behavior in HfV2Ga4

NASA Astrophysics Data System (ADS)

Santos, F. B.; Correa, L. E.; de Lima, B. S.; Cigarroa, O. V.; da Luz, M. S.; Grant, T.; Fisk, Z.; Machado, A. J. S.

2018-04-01

Bulk superconductivity in HfV2Ga4 with critical temperature close to 4.1 K was determined via magnetic susceptibility, electrical resistivity and specific heat measurements. Both the upper and lower critical field dependence with reduced temperature (T /Tc) exhibit non-conventional behavior. The electronic component of specific heat shows a double-jump, the first close to Tc and the other close to 0.75Tc. We speculate about the nature of the douple jump observed in specific heat considering two plausable scenarios: bulk inhomogeneities and the existence of a second gap.

Structural Study of GaAs(001):In 4×2 Surface

NASA Astrophysics Data System (ADS)

Lee, T.-L.; Zegenhagen, J.; Lyman, P. F.; Bedzyk, M. J.

1997-03-01

In a STM and LEED investigation (U. Resch-Esser et al., JVST B 13, 1672 (1995)), the indium-terminated GaAs(001) surface exhibited a (4×2) reconstruction. Based on this study, a dimer model, similar to that proposed by Biegelsen et al. (PRB 41, 5701(1990)) for the (4×2) clean surface, was proposed. However, the detailed local structure of the In ad-atoms was not resolvable from the STM image. In this work, we applied in situ x-ray standing wave (XSW) measurements to determine the surface structure of the GaAs(001) upon the adsorption of In at low coverages. The (4×2)/c(8×2) In-terminated GaAs(001) surface (Θ_In = 0.2 ML) was prepared by MBE. The (004) XSW measurement showed that the In ad-atoms were located 1.61 Åabove the (004) diffraction planes. At higher In coverages (up to 0.6 ML) the In (004) coherent fraction was small. This is consistent with the ladder-type pattern observed by STM at Θ_In > 0.5 ML, which indicated that there were two coexisting surface structures. For Θ_In = 0.2 ML, we found that our off-normal XSW measurements did not agree with the model proposed by Resch-Esser et al.. This work is sponsored by DOE-BES No. W-31-109-ENG-38 and by NSF No. DMR-9632472.

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Structural and optical properties of thermally evaporated cadmium thiogallate CdGa2S4 nanostructure films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; El-Barry, A. M. A.; El-Shazly, E. A. A.; Omar, H. S. S.

2010-10-01

Nano structure films of cadmium thiogallate CdGa2S4 have been prepared by a conventional thermal evaporation technique (at substrate temperature = 303 K). These films were deposited on both glass and quartz substrates. X-ray diffraction measurements showed that CdGa2S4 compound in the powder form has a polycrystalline nature with a tetragonal structure. The as-deposited film was annealed at 673 K for 2 h under vacuum 10-3 Pa and was irradiated by 10 kGy γco rays. This resulted in a transformation to nanostructure grains of CdGa2S4 thin films. Transmission electron microscopy was carried out for all of the investigated films, which also confirmed that those films could be transformed to nanostructure grains. Optical properties of the CdGa2S4 films under investigation were examined using spectrophotometric measurements of transmittance and reflectance at normal incidence in the wavelength range 400-2500 nm. It was found that both refractive index n and absorption index k changed with the heat and irradiation treatments. The dispersion of refractive index in CdGa2S4 was analyzed according to the single oscillator model. Some dispersion parameters were determined for all investigated films. The calculated values of β (which is defined as the parameter used to determine the type of crystal) indicate that CdGa2S4 belongs to the covalent class for all films investigated. The ratio of the free carrier concentration to the effective mass N/m* was also determined. The analysis of the absorption coefficient indicated that this ternary defect chalcopyrite compound has both direct and indirect transitions in relevance to the energy gaps Eg1dir, Eg2dir and Egind, respectively. These energy values decreased by irradiation, while they increased by annealing.

Effect of the common -866G/A polymorphism of the uncoupling protein 2 gene on weight loss and body composition under sibutramine therapy in an obese Taiwanese population.

PubMed

Hsiao, Tun-Jen; Wu, Lawrence Shih-Hsin; Hwang, Yuchi; Huang, Shih-Yi; Lin, Eugene

2010-04-01

Sibutramine, a serotonin and norepinephrine reuptake inhibitor, is used as an anti-obesity drug. Several pharmacogenetic studies have shown correlations between sibutramine effects and genetic variants, such as the 825C/T (rs5443) single nucleotide polymorphism (SNP) in the guanine nucleotide binding protein beta polypeptide 3 (GNB3) gene. In this study, our goal was to investigate whether a common SNP, -866G/A (rs659366), in the uncoupling protein 2 (UCP2) gene could influence weight reduction and body composition under sibutramine therapy in an obese Taiwanese population. The study included 131 obese patients, 44 in the placebo group and 87 in the sibutramine group. We assessed the measures of weight loss and body fat reduction at the end of a 12-week treatment period by analysis of covariance (ANCOVA) models using gender, baseline weight, and body fat percentage at baseline as covariates. By comparing the placebo and sibutramine groups with ANCOVA, our data showed a strong effect of sibutramine on weight loss in the combined UCP2 -866 AA + GA genotype groups (p < 0.001). Similarly, a strong effect of sibutramine on body fat percentage loss was found for individuals with the AA or GA genotypes (p < 0.001). In contrast, sibutramine had no significant effect on weight loss (p = 0.063) or body fat percentage loss (p = 0.194) for individuals with the wild-type GG genotype, compared with the placebo group of the same genotype. Moreover, a potential gene-gene interaction between UCP2 and GNB3 was identified by multiple linear regression models for the weight loss (p < 0.001) and for the percent fat loss (p = 0.031) in response to sibutramine. The results suggest that the UCP2 gene may contribute to weight loss and fat change in response to sibutramine therapy in obese Taiwanese patients.

Optical spectroscopy of disordered Ca3Ga2Ge4O14 crystal doped with manganese

NASA Astrophysics Data System (ADS)

Burkov, Vladimir; Alyabyeva, Liudmila; Mill, Boris; Kotov, Viacheslav

2018-05-01

Circular dichroism, absorption and luminescence spectra of single crystalline manganese doped calcium gallogermanate Ca3Ga2Ge4O14:Mn were investigated in 300-850 nm wavelength region in wide temperature range 8-300 K. Careful analysis of experimental results revealed presence of electron transitions typical for sixfold coordinated trivalent manganese ions with d4 electron configuration. Thus, manganese ions doping the crystal matrix of CCG incorporate into lattice in 1a octahedral site-positions substituting Ga3+ ions. The results obtained were compared with investigation of isostructural to CGG manganese doped langasite crystals, La3Ga5SiO14:Mn where dopant is in octahedral Mn4+ state.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

Numerical study of the defect adamantine compound CuGaGeSe4

NASA Astrophysics Data System (ADS)

Shen, Kesheng; Zhang, Xianzhou; Lu, Hai; Jiao, Zhaoyong

2018-06-01

The electronic structure, elastic and optical properties of the defect adamantine compound CuGaGeSe4 in ? structure are systematically investigated using first-principles calculations. Through detailed calculation and comparison, we obtain three independent atomic arrangements and predict the most stable atomic arrangement according to the lattice constants and enthalpy formation energies. The elastic constants are calculated, which can be used to predict the axial thermal expansion coefficients accurately. The optical properties of compound CuGaGeSe4, including the dielectric function, refractive index and absorption spectrum, are depicted for a more intuitive understanding. Our calculated zero-frequency limits ɛ1(0) and n(0) are very close to the other theoretical values, which proves that our calculations are reliable.

H2CHXdedpa and H4CHXoctapa-chiral acyclic chelating ligands for (67/68)Ga and (111)In radiopharmaceuticals.

PubMed

Ramogida, Caterina F; Cawthray, Jacqueline F; Boros, Eszter; Ferreira, Cara L; Patrick, Brian O; Adam, Michael J; Orvig, Chris

2015-02-16

The chiral acyclic ligands H2CHXdedpa (N4O2), H2CHXdedpa-bb (N4O2), and H4CHXoctapa (N4O4) (CHX = cyclohexyl/cyclohexane, H2dedpa = 1,2-[[6-carboxy-pyridin-2-yl]-methylamino]ethane, bb = N,N'-dibenzylated, H4octapa = N,N'-bis(6-carboxy-2-pyridylmethyl)-ethylenediamine-N,N'-diacetic acid) were synthesized, complexed with Ga(III) and/or In(III), and evaluated for their potential as chelating agents in radiopharmaceutical applications. The ligands were compared to the previously studied hexadentate H2dedpa and octadentate H4octapa ligands to determine the effect adding a chiral 1R,2R-trans-cyclohexane to replace the ethylenediamine backbone would have on metal complex stability and radiolabeling kinetics. It was found that [Ga(CHXdedpa)](+) showed very similar properties to those of [Ga(dedpa)](+), with only one isomer in solution observed by NMR spectroscopy, and minimal structural changes in the solid-state X-ray structure. Like [Ga(dedpa)](+), [Ga(CHXdedpa)](+) exhibited exceptionally high thermodynamic stability constants (log KML = 28.11(8)), and the chelate retained the ability to label (67)Ga quantitatively in 10 min at room temperature at ligand concentrations of 1 × 10(-5) M. In vitro kinetic inertness assays demonstrated the [(67)Ga(CHXdedpa)](+) complex to be more stable than [(67)Ga(dedpa)](+) in a human serum competition, with 90.5% and 77.8% of (67)Ga remaining chelate-bound after 2 h, respectively. Preliminary coordination studies of H4CHXoctapa with In(III) demonstrated [In(CHXoctapa)](-) to have an equivalently high thermodynamically stable constant as [In(octapa)](-), with log KML values of 27.16(9) and 26.76(14), respectively. The [(111)In(CHXoctapa)](-) complex showed exceptionally high in vitro kinetic inertness over 120 h in human serum, comparing well with previously reported [(111)In(octapa)](-) values, and an improved stability compared to the current industry "gold standards" 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA

Sc(2)MgGa(2) and Y(2)MgGa(2).

PubMed

Sahlberg, Martin; Andersson, Yvonne

2009-03-01

Scandium magnesium gallide, Sc(2)MgGa(2), and yttrium magnesium gallide, Y(2)MgGa(2), were synthesized from the corresponding elements by heating under an argon atmosphere in an induction furnace. These intermetallic compounds crystallize in the tetragonal Mo(2)FeB(2)-type structure. All three crystallographically unique atoms occupy special positions and the site symmetries of (Sc/Y, Ga) and Mg are m2m and 4/m, respectively. The coordinations around Sc/Y, Mg and Ga are pentagonal (Sc/Y), tetragonal (Mg) and triangular (Ga) prisms, with four (Mg) or three (Ga) additional capping atoms leading to the coordination numbers [10], [8+4] and [6+3], respectively. The crystal structure of Sc(2)MgGa(2 )was determined from single-crystal diffraction intensities and the isostructural Y(2)MgGa(2) was identified from powder diffraction data.

SNPs of melanocortin 4 receptor (MC4R) associated with body weight in Beagle dogs.

PubMed

Zeng, Ruixia; Zhang, Yibo; Du, Peng

2014-01-01

Melanocortin 4 receptor (MC4R), which is associated with inherited human obesity, is involoved in food intake and body weight of mammals. To study the relationships between MC4R gene polymorphism and body weight in Beagle dogs, we detected and compared the nucleotide sequence of the whole coding region and 3'- and 5'- flanking regions of the dog MC4R gene (1214 bp). In 120 Beagle dogs, two SNPs (A420C, C895T) were identified and their relation with body weight was analyzed with RFLP-PCR method. The results showed that the SNP at A420C was significantly associated with canine body weight trait when it changed amino acid 101 of the MC4R protein from asparagine to threonine, while canine body weight variations were significant in female dogs when MC4R nonsense mutation at C895T. It suggested that the two SNPs might affect the MC4R gene's function which was relative to body weight in Beagle dogs. Therefore, MC4R was a candidate gene for selecting different size dogs with the MC4R SNPs (A420C, C895T) being potentially valuable as a genetic marker.

Rational design and synthesis of yolk-shell ZnGa2O4@C nanostructure with enhanced lithium storage properties

NASA Astrophysics Data System (ADS)

Han, Nao; Xia, Yuguo; Han, Yanyang; Jiao, Xiuling; Chen, Dairong

2018-03-01

The ability to create hybrid nanostructure with synergistic effect and confined morphology to achieve high performance and long-term stability is high desirable in lithium ion batteries. Although transition metal oxides as anode material reveal high theoretical capacities, the significant volume changes during repeated lithium insertion and extraction cause pulverization of electrode materials, resulting in rapid fade in capacity. Herein, yolk-shell nanostructure of ZnGa2O4 encapsulated by amorphous carbon is rationally designed and synthesized through two-step surface coating followed by thermal treatment and etching process. It is noteworthy that ZnGa2O4@C with yolk-shell structure is superior to pristine ZnGa2O4 and ZnGa2O4@C with core-shell structure in term of lithium storage. The stable reversible capacity of yolk-shell ZnGa2O4@C can be retained at 657.2 mAh g-1 at current density of 1 A g-1 after completion of 300 cycles, which also reveals superior rate performance. The appropriate carbon shell and void space involved in the yolk-shell structure are considered to be the crucial factor in accommodating volume expansion as well as preserving the structural integrity of yolk-shell ZnGa2O4@C.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1981-01-01

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang

2017-05-01

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO4 (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage-controlled competitions between weak localization (WL) and weak antilocalization (WAL), and the respective weights of WL and WAL contributions demonstrate an intriguing universal dependence on the channel conductivity regardless of the difference in the electrical characteristics of the a-IGZO TFTs. Our findings help build a theoretical interpretation of the competing WL and WAL observed in the electron systems in a-IGZO TFTs.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

NASA Astrophysics Data System (ADS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-12-01

Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Skrobas, K.; Suski, T.; Christensen, N. E.; Svane, A.

2015-08-01

The electronic structures of short period mGaN/nGayAl1-yN and mInyGa1-yN/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Structural characterization of a new high-pressure phase of GaAsO4.

PubMed

Santamaría-Pérez, David; Haines, Julien; Amador, Ulises; Morán, Emilio; Vegas, Angel

2006-12-01

As in SiO2 which, at high pressures, undergoes the alpha-quartz-->stishovite transition, GaAsO4 transforms into a dirutile structure at 9 GPa and 1173 K. In 2002, a new GaAsO4 polymorph was found by quenching the compound from 6 GPa and 1273 K to ambient conditions. The powder diagram was indexed on the basis of a hexagonal cell (a=8.2033, c=4.3941 A, V=256.08 A3), but the structure did not correspond to any known structure of other AXO4 compounds. We report here the ab initio crystal structure determination of this hexagonal polymorph from powder data. The new phase is isostructural to beta-MnSb2O6 and it can be described as a lacunary derivative of NiAs with half the octahedral sites being vacant, but it also contains fragments of the rutile-like structure.

Luminescence Characteristics of ZnGa2O4 Thick Film Doped with Mn2+ and Cr3+ at Various Sintering Temperatures

NASA Astrophysics Data System (ADS)

Cha, Jae Hyeok; Kim, Kyung Hwan; Park, Yong Seo; Kwon, Sang Jik; Choi, Hyung Wook

2007-10-01

ZnGa2O4 phosphor separately doped with Mn2+ and Cr3+ was synthesized by solid-state reaction, and thick films were deposited by screen printing. The X-ray diffraction (XRD) patterns of ZnGa2O4 phosphor thick films show a (311) main peak and a spinal phase. Uniform distribution and filled morphology of the doped ZnGa2O4 phosphor thick films were formed at the sintering temperature of 1100 °C. The CL spectrum of Mn2+-doped ZnGa2O4 shows the main peak of 512 nm green emission with the 4T1→6A1 transition of Mn2+ ions and the CL spectrum of Cr3+-doped ZnGa2O4 shows the main peak of 716 nm red emission with the 2E→4A2 transition of Cr3+ ions.

The weight of mass or the mess of weight

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gat, U.

1987-06-24

This paper explores the cause of confusion associated with the words mass and weight, and offers suggestions to correct the problem. It is recommended that in technical and scientific use, weight shall be restricted to mean force of gravity. Technical standards, ASTM and others, and terminology shall clearly reflect and define weight to be force of gravity. Weight should be avoided in technical context because of its imprecision. Legal, formal, and official language shall use weight to mean force only. Under no circumstances should the SI units of mass, the kilogram, or its derivatives, be associated with weight. The termmore » weight should be avoided in any language and wording that intends to convey a precise or important meaning. ASTM should revise all standards and terminology accordingly.« less

Centrosymmetry vs noncentrosymmetry in La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} based on the interesting size effects of lanthanides: Syntheses, crystal structures, and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Hua-Jun, E-mail: cszzl772002@yeah.net; State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002

Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared from stoichiometric elements at 1223 K in an evacuated silica tube. Interestingly, La{sub 2}Ga{sub 0.33}SbS{sub 5} crystallizes in the centrosymmetric structure, while Ce{sub 4}GaSbS{sub 9} crystallizes in the noncentrosymmetric structure, which show obvious size effects of lanthanides on the crystal structures of these two compounds. Ce{sub 4}GaSbS{sub 9} belongs to RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type with a=13.8834(9) Å, b=14.3004(11) Å, c=14.4102(13) Å, V=2861.0(4) Å{sup 3}. The structure features infinite chains of [Ga{sub 2}Sb{sub 2}S{sub 11}{sup 10–}]{sub ∞} propagating along a directionmore » separated by Ce{sup 3+} cations and S{sup 2−} anions. La{sub 2}Ga{sub 0.33}SbS{sub 5} adopts the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure with a=7.5193(6) Å, c=13.4126(17) Å, V=758.35(13) Å{sup 3}. Its structure is built up from the alternate stacking of La/Sb/S and La/Ga/S 2D building blocks. The La/Sb/S slabs consist of teeter-totter chains of Sb1S{sub 4} seesaws, which are connected via sharing the apexes of μ{sub 4}-S1. Moreover, La1 is positionally disordered with Sb1 and stabilized in a bicapped trigonal prismatic coordination sphere. Between these La/Sb/S slabs, La2S{sub 8} square antiprisms are connected via edge-sharing into 2D building blocks, creating tetrahedral sites partially occupied by the Ga1 atoms. UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of La{sub 2}Ga{sub 0.33}SbS{sub 5} is about 1.76 eV. - Graphical abstract: Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared by solid-state reactions. Ce{sub 4}GaSbS{sub 9} crystallizes in RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type, while La{sub 2}Ga{sub 0.33}SbS{sub 5} belongs to the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure and

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T.

2015-08-21

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations,more » the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.« less

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Li, Guo-Ling; Zhang, Fabi; Cui, Yi-Tao; Oji, Hiroshi; Son, Jin-Young; Guo, Qixin

2015-07-01

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga2O3.

Interleukin-10 -1082 G/A polymorphism and risk of death or bronchopulmonary dysplasia in ventilated very low birth weight infants.

PubMed

Yanamandra, Krishna; Boggs, Peter; Loggins, John; Baier, R John

2005-05-01

IL-10 is an anti-inflammatory cytokine that may have a protective role in acute lung injury. IL-10 expression is affected by a single-nucleotide polymorphism (SNP) located at position -1082 (G to A). The A allele is associated with lower IL-10 production. Low IL-10 production has been linked to the development of BPD. Thus, the IL-10 -1082 SNP may be a genetic risk factor for the development of BPD in the premature newborn. The IL-10 -1082 SNP was determined in 294 (235 African American, 56 Caucasian, and 3 Hispanic) mechanically ventilated very low birth weight (VLBW) infants and compared to outcome (death and/or development of BPD). Differences in groups were analyzed using ANOVA (continuous variables) or chi square (proportions). The frequency of the A allele in our population was 0.62. Thirty-nine (13.3%) infants were homozygous GG, 146 (49.7%) were heterozygous GA, and 109 (37.0%) were homozygous AA. There were no significant differences between genotype groups with respect to ethnic origin, gender, need for surfactant replacement therapy, and isolation of Ureaplasma urealyticum or Mycoplasma hominis from tracheal aspirates at birth. However, AA infants were slightly more mature and of greater birth weight than GA infants (26.9 +/- 0.2 weeks vs. 26.3 +/- 0.2 weeks, P < 0.05, and 940 +/- 22 g vs. 882 +/- 18 g, P < 0.05, respectively). There was no significant effect of the IL-10 -1082 SNP on mortality or the development of BPD (O2 on 28 days or 36 weeks postconceptional age). However, when considered together, the IL-10 -1082 AA/GA genotypes (lower IL-10 production) were associated with a trend toward reduction in risk for the combined outcome of BPD or death (18/39 vs. 80/255, respectively; P = 0.068). The incidence of other complications of prematurity (retinopathy of prematurity, intraventricular hemorrhage, or periventricular leukomalacia) was not different between groups. In conclusion, the IL-10 -1082 G/A SNP does not have a major influence on mortality

Epitaxy of Zn{sub 2}TiO{sub 4} (1 1 1) thin films on GaN (0 0 1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiao, Chu-Yun; Wu, Jhih-Cheng; Shih, Chuan-Feng, E-mail: cfshih@mail.ncku.edu.tw

2013-03-15

Highlights: ► High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by sputtering. ► Oxygen atmosphere and post heat-treatment annealing effectively enhanced epitaxy. ► The epitaxial Zn{sub 2}TiO{sub 4} modifies the dielectric properties of ceramic oxide. - Abstract: High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn{sub 2}TiO{sub 4} films. Lattice image at the Zn{sub 2}TiO{sub 4} (1 1 1)/GaN (0 0 1) interface was obtained by high-resolutionmore » transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (111){sub Zn{sub 2TiO{sub 4}}}||(001){sub GaN}, (202{sup ¯}){sub Zn{sub 2TiO{sub 4}}}||(110){sub GaN},and[21{sup ¯}1{sup ¯}]{sub Zn{sub 2TiO{sub 4}}}||[01{sup ¯}10]{sub GaN}. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn{sub 2}TiO{sub 4} based capacitor were ∼18.9, 8.38 × 10{sup 11} eV{sup −1} cm{sup −2}, and 1.1 V, respectively, indicating the potential applications of the Zn{sub 2}TiO{sub 4} thin film to the GaN-based metal-oxide-semiconductor capacitor.« less

Dependence of Ag/Ga composition ratio in AgGaSe2 thin film

NASA Astrophysics Data System (ADS)

Matsuo, H.; Yoshino, K.; Ikari, T.

2006-09-01

AgGaSe2 thin film was deposited on glass substrates by vacuum evaporation method. The starting material was mixed Ag2Se and Ga2Se3 powders. Ag/Ga ratios of the samples were 1.5, 1.2, 1.0, 0.8, 0.7 and 0.4. The samples were annealed from 100 to 600 °C for 10 min. After these processes, single phase AgGaSe2 thin films could be obtained except Ag/Ga ratio of 0.4 at annealing temperature of 600 °C. Ag-rich samples had large grain. On the other hand, Ga-rich samples had small grain. Furthermore, Ga-rich and Ag-rich samples indicated p- and n-types because of Ag- and/or Ga-vacancy and Se-vacancy, respectively.

TL and OSL properties of Mn2+-doped MgGa2O4 phosphor

NASA Astrophysics Data System (ADS)

Luchechko, A.; Zhydachevskyy, Ya; Maraba, D.; Bulur, E.; Ubizskii, S.; Kravets, O.

2018-04-01

The oxide MgGa2O4 spinel ceramics doped with Mn2+ ions was synthesized by a solid-state reaction at 1200 °C in air. The activator concentration was equal 0.05 mol% of MnO. Phase purity of the synthesized samples was analyzed by X-ray diffraction technique. This spinel ceramics show efficient green emission in the range from 470 to 550 nm with a maximum at about 505 nm under UV or X-ray excitations, which is due to Mn2+ ions. MgGa2O4: Mn2+ exhibits intense thermoluminescence (TL) and optically stimulated luminescence (OSL) after influence of ionizing radiation. Are complex nature of the TL glow curves is associated with a significant number of structural defects that are responsible for the formation of shallow and deep electron traps. In this work, time-resolved OSL characteristics of the samples exposed to beta particles are reported for the first time. A light from green LED was used for optical stimulation. Obtained TL and OSL results suggest MgGa2O4:Mn2+ as perspective material for further research and possible application in radiation dosimetry.

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

PubMed

Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

2018-01-23

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

29 CFR 1471.965 - Legal proceedings.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 29 Labor 4 2014-07-01 2014-07-01 false Legal proceedings. 1471.965 Section 1471.965 Labor Regulations Relating to Labor (Continued) FEDERAL MEDIATION AND CONCILIATION SERVICE GOVERNMENTWIDE DEBARMENT AND SUSPENSION (NONPROCUREMENT) Definitions § 1471.965 Legal proceedings. Legal proceedings means any...

29 CFR 1471.965 - Legal proceedings.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 29 Labor 4 2013-07-01 2013-07-01 false Legal proceedings. 1471.965 Section 1471.965 Labor Regulations Relating to Labor (Continued) FEDERAL MEDIATION AND CONCILIATION SERVICE GOVERNMENTWIDE DEBARMENT AND SUSPENSION (NONPROCUREMENT) Definitions § 1471.965 Legal proceedings. Legal proceedings means any...

29 CFR 1471.965 - Legal proceedings.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 29 Labor 4 2011-07-01 2011-07-01 false Legal proceedings. 1471.965 Section 1471.965 Labor Regulations Relating to Labor (Continued) FEDERAL MEDIATION AND CONCILIATION SERVICE GOVERNMENTWIDE DEBARMENT AND SUSPENSION (NONPROCUREMENT) Definitions § 1471.965 Legal proceedings. Legal proceedings means any...

29 CFR 1471.965 - Legal proceedings.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 4 2010-07-01 2010-07-01 false Legal proceedings. 1471.965 Section 1471.965 Labor Regulations Relating to Labor (Continued) FEDERAL MEDIATION AND CONCILIATION SERVICE GOVERNMENTWIDE DEBARMENT AND SUSPENSION (NONPROCUREMENT) Definitions § 1471.965 Legal proceedings. Legal proceedings means any...

29 CFR 1471.965 - Legal proceedings.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 29 Labor 4 2012-07-01 2012-07-01 false Legal proceedings. 1471.965 Section 1471.965 Labor Regulations Relating to Labor (Continued) FEDERAL MEDIATION AND CONCILIATION SERVICE GOVERNMENTWIDE DEBARMENT AND SUSPENSION (NONPROCUREMENT) Definitions § 1471.965 Legal proceedings. Legal proceedings means any...

Spin-Glass Ground State in a Triangular-Lattice Compound YbZnGaO4

NASA Astrophysics Data System (ADS)

Ma, Zhen; Wang, Jinghui; Dong, Zhao-Yang; Zhang, Jun; Li, Shichao; Zheng, Shu-Han; Yu, Yunjie; Wang, Wei; Che, Liqiang; Ran, Kejing; Bao, Song; Cai, Zhengwei; Čermák, P.; Schneidewind, A.; Yano, S.; Gardner, J. S.; Lu, Xin; Yu, Shun-Li; Liu, Jun-Ming; Li, Shiyan; Li, Jian-Xin; Wen, Jinsheng

2018-02-01

We report on comprehensive results identifying the ground state of a triangular-lattice structured YbZnGaO4 as a spin glass, including no long-range magnetic order, prominent broad excitation continua, and the absence of magnetic thermal conductivity. More crucially, from the ultralow-temperature ac susceptibility measurements, we unambiguously observe frequency-dependent peaks around 0.1 K, indicating the spin-glass ground state. We suggest this conclusion holds also for its sister compound YbMgGaO4 , which is confirmed by the observation of spin freezing at low temperatures. We consider disorder and frustration to be the main driving force for the spin-glass phase.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

32 CFR 637.12 - Legal considerations.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 4 2011-07-01 2011-07-01 false Legal considerations. 637.12 Section 637.12... CRIMINAL INVESTIGATIONS MILITARY POLICE INVESTIGATION Investigations § 637.12 Legal considerations. (a... of establishing a legal opinion as to whether sufficient credible evidence has been established to...

32 CFR 637.12 - Legal considerations.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 4 2010-07-01 2010-07-01 true Legal considerations. 637.12 Section 637.12... CRIMINAL INVESTIGATIONS MILITARY POLICE INVESTIGATION Investigations § 637.12 Legal considerations. (a... of establishing a legal opinion as to whether sufficient credible evidence has been established to...

32 CFR 637.12 - Legal considerations.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 32 National Defense 4 2014-07-01 2013-07-01 true Legal considerations. 637.12 Section 637.12... CRIMINAL INVESTIGATIONS MILITARY POLICE INVESTIGATION Investigations § 637.12 Legal considerations. (a... of establishing a legal opinion as to whether sufficient credible evidence has been established to...

32 CFR 637.12 - Legal considerations.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 32 National Defense 4 2013-07-01 2013-07-01 false Legal considerations. 637.12 Section 637.12... CRIMINAL INVESTIGATIONS MILITARY POLICE INVESTIGATION Investigations § 637.12 Legal considerations. (a... of establishing a legal opinion as to whether sufficient credible evidence has been established to...

32 CFR 637.12 - Legal considerations.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 32 National Defense 4 2012-07-01 2011-07-01 true Legal considerations. 637.12 Section 637.12... CRIMINAL INVESTIGATIONS MILITARY POLICE INVESTIGATION Investigations § 637.12 Legal considerations. (a... of establishing a legal opinion as to whether sufficient credible evidence has been established to...

Efficient optical activation of Eu3+ ions doped in ZnGa2O4 thin films: Correlation between crystalline phase and photoluminescence

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Shinojima, Hiroyuki

2018-06-01

The physicochemical properties of Eu-doped zinc gallate (ZnGaxO1+1.5x:Eu) (1 < x < 6) thin films were investigated by means of photoluminescence (PL) triggered by band-to-band transitions of the host crystal at λ = 325 nm. Close correspondence between PL spectra and crystalline phases was verified by performing combinatorial measurements over four-inch substrates on which there was a spread of Ga/Zn composition ratios. The phase formation kinetics for deposition with H2O as an oxygen source gas followed by post annealing were similar to those of hydrothermal synthesis. ZnGa2O4 preferentially formed for a wide range of compositions between 1 < x < 4 and post annealing temperatures between 400 and 800 °C; intense emissions from Eu3+ ions were observed from the films. In contrast, the phase formation kinetics for deposition with O2 gas followed by post annealing were similar to those of solid-state reactions. Vacuum annealing above 500 °C caused preferential losses of Ga atoms and precipitation of Zn2Ga2O5 crystallites at x < 4, whereas ZnGa2O4 formed when a large amount of Ga (x > 6) was initially contained in the as-deposited state. The resulting PL spectra from Zn2Ga2O5 exhibited only a broad emission band from 450 to 700 nm, which was ascribed to defects in the poorly crystallized Zn:Ga = 1:1 phase. When the films deposited with O2 were post annealed in an O2 ambient, Zn atoms were lost, producing β-Ga2O3 as the primary phase accompanied with ZnGa2O4. The resulting Eu3+ emission was very weak, possibly because the Eu3+ ions attached to Ga2O3 domains were not emission-active and/or could not be efficiently excited due to wide bandgap (5 eV). When ZnGa2O4:Eu films were crystallized during deposition at elevated temperatures, weak emissions only from Eu3+ ions were observed. Taken together, these experimental results indicate that Eu3+ ions attached to ZnGa2O4 are highly emission-active; i.e., ZnGa2O4 is a particularly good host crystal with which to secure

Enhanced Thermoelectric Properties of Cu 2ZnSnSe 4 with Ga-doping

DOE PAGES

Wei, Kaya; Beauchemin, Laura; Wang, Hsin; ...

2015-08-10

Gallium doped Cu 2ZnSnSe 4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S 2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are partmore » of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Temperament and body weight from ages 4 to 15 years.

PubMed

Sutin, A R; Kerr, J A; Terracciano, A

2017-07-01

In adulthood, conscientiousness and neuroticism are correlates of body weight and weight gain. The present research examines whether the childhood antecedents of these traits, persistence and negative reactivity, respectively, are associated with weight gain across childhood. We likewise examine sociability as a predictor of childhood weight gain and whether these three traits are associated with weight concerns and weight-management strategies in adolescence. Participants (N=4153) were drawn from the Longitudinal Study of Australian Children, an ongoing, population-based study of child and family health and well-being. At the baseline assessment, caregivers reported on their child's temperament. At every assessment from ages 4-5 to 14-15 years, study children were weighed and measured by trained staff; there were up to six biennial assessments of body mass index and waist circumference. At ages 14-15 years, study children (n=2975) also self-reported on their weight concerns and weight-management strategies. Study children rated lower in persistence or higher in negative reactivity in early childhood gained more weight between the ages of 4 and 15 years. Sociability was associated with weight gain among girls but not among boys. Lower persistence and higher negative reactivity at ages 4-5 years were also associated with greater weight concerns, restrained eating and use of unhealthy weight-management strategies at ages 14-15 years. Childhood traits related to conscientiousness and neuroticism are associated with objective weight gain across childhood and with concerns and strategies to manage weight in adolescence. These results are consistent with a lifespan perspective that indicates that trait psychological functioning contributes to health-related markers from childhood through old age.

Antiferromagnetic Ordering in Organic Conductor λ-(BEDT-TTF)2GaCl4 Probed by 13C NMR

NASA Astrophysics Data System (ADS)

Saito, Yohei; Fukuoka, Shuhei; Kobayashi, Takuya; Kawamoto, Atsushi; Mori, Hatsumi

2018-01-01

The ground state of λ-(BEDT-TTF)2GaCl4, which has the same structure as the organic superconductor λ-(BETS)2GaCl4, was investigated by magnetic susceptibility and 13C NMR measurements. The temperature dependence of the magnetic susceptibility revealed an antiferromagnetic (AF) correlation with J/kB ≃ 98 K. NMR spectrum splitting and the divergence of 1/T1 were observed at approximately 13 K, which is associated with the AF transition. We found that the AF structure is commensurate according to discrete NMR peak splitting, suggesting that the ground state of λ-(BEDT-TTF)2GaCl4 is an AF dimer-Mott insulating state. Our results suggest that the superconducting phase of λ-type salts would be located near the AF insulating phase.

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Vernon, S. M.; Wolfson, R. G.; Tobin, S. P.

1984-01-01

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Charge density wave behavior and order-disorder in the antiferromagnetic metallic series Eu (Ga1 -xAlx)4

NASA Astrophysics Data System (ADS)

Stavinoha, Macy; Cooley, Joya A.; Minasian, Stefan G.; McQueen, Tyrel M.; Kauzlarich, Susan M.; Huang, C.-L.; Morosan, E.

2018-05-01

The solid solution Eu (Ga1-xAlx) 4 was grown in single crystal form to reveal a rich variety of crystallographic, magnetic, and electronic properties that differ from the isostructural end compounds EuGa4 and EuAl4, despite the similar covalent radii and electronic configurations of Ga and Al. Here we report the onset of magnetic spin reorientation and metamagnetic transitions for x =0 -1 evidenced by magnetization and temperature-dependent specific heat measurements. TN changes nonmonotonously with x , and it reaches a maximum around 20 K for x =0.50 , where the a lattice parameter also shows an extreme (minimum) value. Anomalies in the temperature-dependent resistivity consistent with charge density wave behavior exist only for x =0.50 and 1. Density functional theory calculations show increased polarization between the Ga-Al covalent bonds in the x =0.50 structure compared to the end compounds, such that crystallographic order and chemical pressure are proposed as the causes of the charge density wave behavior.

40 CFR 52.1325 - Legal authority.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 4 2010-07-01 2010-07-01 false Legal authority. 52.1325 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Missouri § 52.1325 Legal authority. (a... exist in local legal authority. (1) St. Louis County Division of Air Pollution Control: (i) Authority to...

40 CFR 52.1325 - Legal authority.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 4 2012-07-01 2012-07-01 false Legal authority. 52.1325 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Missouri § 52.1325 Legal authority. (a... exist in local legal authority. (1) St. Louis County Division of Air Pollution Control: (i) Authority to...

40 CFR 52.1325 - Legal authority.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 4 2011-07-01 2011-07-01 false Legal authority. 52.1325 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Missouri § 52.1325 Legal authority. (a... exist in local legal authority. (1) St. Louis County Division of Air Pollution Control: (i) Authority to...

20 CFR 725.230 - Legal impediment.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false Legal impediment. 725.230 Section 725.230... Conditions and Duration of Entitlement: Miner's Dependents (augmented Benefits) § 725.230 Legal impediment. For purposes of this subpart, “legal impediment” means an impediment resulting from the lack of...

20 CFR 725.230 - Legal impediment.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 20 Employees' Benefits 4 2013-04-01 2013-04-01 false Legal impediment. 725.230 Section 725.230... Conditions and Duration of Entitlement: Miner's Dependents (augmented Benefits) § 725.230 Legal impediment. For purposes of this subpart, “legal impediment” means an impediment resulting from the lack of...

20 CFR 725.230 - Legal impediment.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 20 Employees' Benefits 4 2012-04-01 2012-04-01 false Legal impediment. 725.230 Section 725.230... Conditions and Duration of Entitlement: Miner's Dependents (augmented Benefits) § 725.230 Legal impediment. For purposes of this subpart, “legal impediment” means an impediment resulting from the lack of...

40 CFR 52.1325 - Legal authority.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 4 2013-07-01 2013-07-01 false Legal authority. 52.1325 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Missouri § 52.1325 Legal authority. (a... exist in local legal authority. (1) St. Louis County Division of Air Pollution Control: (i) Authority to...

40 CFR 52.1325 - Legal authority.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 4 2014-07-01 2014-07-01 false Legal authority. 52.1325 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Missouri § 52.1325 Legal authority. (a... exist in local legal authority. (1) St. Louis County Division of Air Pollution Control: (i) Authority to...

Anti-legal attitude toward abortion among abortion patients in the United States.

PubMed

Thomas, Rachel G; Norris, Alison H; Gallo, Maria F

2017-11-01

To measure the prevalence of believing that abortion should be illegal in all or most cases among women obtaining an abortion in the United States and to identify correlates of holding this belief. Study population was drawn from the nationally-representative 2008 Abortion Patient Survey. The primary outcome was having an anti-legal abortion attitude, defined as agreeing that abortion should be illegal in all or most cases. We assessed potential correlates in bivariable and multivariable analyses using weights to account for the complex sampling. A total of 4769 abortion patients completed the survey module containing the question on abortion legality, of which 4492 (94.2%) had non-missing data for the outcome. Overall, 4.1% of patients (N=183) reported an anti-legal abortion attitude. Correlates of having anti-legal attitude included being married, at <200% federal poverty level, fundamentalist, contraception non-use, no abortion history, perceiving the pregnancy with ambivalence or as unintended, and using misoprostol or another product on their own to bring back their period or end the pregnancy. Abortion patients who do not believe abortion should be legal appear to differ substantially from women who are more supportive of legality. Findings raise important questions about this subset of patients, including whether possible discordance between patient beliefs and behavior could influence their use of medical abortion or other products. Some abortion patients do not agree with abortion legality, and this subset could experience a degree of cognitive dissonance, which could influence the method by which they seek to abort. Copyright © 2017 Elsevier Inc. All rights reserved.

77 FR 39731 - Swinomish Indian Tribal Community-Title 15, Chapter 4: Liquor Legalization, Regulation and...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-05

... DEPARTMENT OF THE INTERIOR Bureau of Indian Affairs Swinomish Indian Tribal Community--Title 15.... ACTION: Notice. SUMMARY: This notice publishes Title 15, Chapter 4: Liquor Legalization, Regulation and... Indian Tribal Community Senate adopted Ordinance No. 296, Enacting Swinomish Tribal Code Title 15...

Classical Spin Nematic Transition in LiGa0.95In0.05Cr4O8

NASA Astrophysics Data System (ADS)

Wawrzyńczak, R.; Tanaka, Y.; Yoshida, M.; Okamoto, Y.; Manuel, P.; Casati, N.; Hiroi, Z.; Takigawa, M.; Nilsen, G. J.

2017-08-01

We present the results of a combined 7Li -NMR and diffraction study on LiGa0.95In0.05Cr4O8, a member of the LiGa1 -xInxCr4O8 "breathing" pyrochlore family. Via specific heat and NMR measurements, we find that the complex sequence of first-order transitions observed for LiGaCr4O8 is replaced by a single second-order transition at Tf=11 K . Neutron and x-ray diffraction rule out both structural symmetry lowering and magnetic long-range order as the origin of this transition. Instead, reverse Monte Carlo fitting of the magnetic diffuse scattering indicates that the low-temperature phase may be described as a collinear spin nematic state, characterized by a quadrupolar order parameter. This state also shows signs of short-range order between collinear spin arrangements on tetrahedra, revealed by mapping the reverse Monte Carlo spin configurations onto a three-state color model.

Studies on the sensing behaviour of nanocrystalline CuGa(2)O(4) towards hydrogen, liquefied petroleum gas and ammonia.

PubMed

Biswas, Soumya Kanti; Sarkar, Arpita; Pathak, Amita; Pramanik, Panchanan

2010-06-15

In the present article, the gas sensing behaviour of nanocrystalline CuGa(2)O(4) towards H(2), liquefied petroleum gas (LPG) and NH(3) has been reported for the first time. Nanocrystalline powders of CuGa(2)O(4) having average particle sizes in the range of 30-60nm have been prepared through thermal decomposition of an aqueous precursor solution comprising copper nitrate, gallium nitrate and triethanol amine (TEA), followed by calcination at 750 degrees C for 2h. The synthesized nanocrystalline CuGa(2)O(4) powders have been characterised through X-ray diffraction (XRD), transmission electron microscopy (TEM), field-emission scanning electron microscopy (FESEM) study, energy dispersive X-ray (EDX) analysis and BET (Brunauer-Emmett-Teller) surface area measurement. The synthesized CuGa(2)O(4) having spinel structure with specific surface area of 40m(2)/g exhibits maximum sensitivity towards H(2), LPG, and NH(3) at 350 degrees C.

45 CFR 1321.71 - Legal assistance.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 45 Public Welfare 4 2012-10-01 2012-10-01 false Legal assistance. 1321.71 Section 1321.71 Public... AND COMMUNITY PROGRAMS ON AGING Service Requirements § 1321.71 Legal assistance. (a) The provisions and restrictions in this section apply only to legal assistance providers and only if they are...

45 CFR 1321.71 - Legal assistance.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 45 Public Welfare 4 2011-10-01 2011-10-01 false Legal assistance. 1321.71 Section 1321.71 Public... AND COMMUNITY PROGRAMS ON AGING Service Requirements § 1321.71 Legal assistance. (a) The provisions and restrictions in this section apply only to legal assistance providers and only if they are...

45 CFR 1321.71 - Legal assistance.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 45 Public Welfare 4 2013-10-01 2013-10-01 false Legal assistance. 1321.71 Section 1321.71 Public... AND COMMUNITY PROGRAMS ON AGING Service Requirements § 1321.71 Legal assistance. (a) The provisions and restrictions in this section apply only to legal assistance providers and only if they are...

45 CFR 1321.71 - Legal assistance.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 45 Public Welfare 4 2014-10-01 2014-10-01 false Legal assistance. 1321.71 Section 1321.71 Public... AND COMMUNITY PROGRAMS ON AGING Service Requirements § 1321.71 Legal assistance. (a) The provisions and restrictions in this section apply only to legal assistance providers and only if they are...

45 CFR 1321.71 - Legal assistance.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 45 Public Welfare 4 2010-10-01 2010-10-01 false Legal assistance. 1321.71 Section 1321.71 Public... AND COMMUNITY PROGRAMS ON AGING Service Requirements § 1321.71 Legal assistance. (a) The provisions and restrictions in this section apply only to legal assistance providers and only if they are...

A convenient route to [68Ga]Ga-MAA for use as a particulate PET perfusion tracer.

PubMed

Mathias, Carla J; Green, Mark A

2008-12-01

A convenient method is described for compounding [(68)Ga]Ga-MAA (MAA=macroaggregated human serum albumin) with the eluate of a commercially available TiO(2)-based (68)Ge/(68)Ga generator. The final [(68)Ga]Ga-MAA product was obtained with an 81.6+/-5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8+/-0.1% (n=5). Microscopic examination showed the [(68)Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [(68)Ga]Ga-MAA suspension, could be completed in 25 min. Only 4.4+/-0.9% of the total (68)Ge breakthrough remaining associated with the final [(68)Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [(68)Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use.

20 CFR 725.422 - Legal assistance.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 20 Employees' Benefits 4 2013-04-01 2013-04-01 false Legal assistance. 725.422 Section 725.422... SAFETY AND HEALTH ACT, AS AMENDED Adjudication of Claims by the District Director § 725.422 Legal assistance. The Secretary or his or her designee may, upon request, provide a claimant with legal assistance...

20 CFR 725.422 - Legal assistance.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 20 Employees' Benefits 4 2012-04-01 2012-04-01 false Legal assistance. 725.422 Section 725.422... SAFETY AND HEALTH ACT, AS AMENDED Adjudication of Claims by the District Director § 725.422 Legal assistance. The Secretary or his or her designee may, upon request, provide a claimant with legal assistance...

20 CFR 725.422 - Legal assistance.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false Legal assistance. 725.422 Section 725.422... SAFETY AND HEALTH ACT, AS AMENDED Adjudication of Claims by the District Director § 725.422 Legal assistance. The Secretary or his or her designee may, upon request, provide a claimant with legal assistance...

The ~2.4 Ga granitoids in the Quanji Massif，NW China: Petrogenesis and Implication for the early Paleoproterozoic Tectonics

NASA Astrophysics Data System (ADS)

Gong, S.; Chen, N.; Wang, Q.

2014-12-01

The 2.4-2.2 Ga collision-related magmatism had once been considered to be weak or lacking, and were interpreted to represent the stagnation and deceleration of plate subduction. However, large-scale intermediate to acid intrusions at 2.4-2.2 Ga are widely reported in the Trans-North China Orogen and Tarim Craton, NW China. Here we presented geochronological and geochemical and Nd-Hf isotopic studies of the Hudesheng and Delingha granitoids in the Quanji Massif, which could shed new light on the NW China and global tectonics in the Paleoproterozoic. The two granitoids are exposed in the eastern and central parts of the Quanji Massif, showing similar rock types and including mainly the syenogranitic, monzogranitic and adamellitic gneisses, with ~2.41 Ga low P/T-type amphibolite enclaves. They were formed at 2.37-2.39 Ga and underwent medium P/T-type amphibolite-facies metamorphism at ~1.95-1.90 Ga. Both granitoids have relatively high Si, K contents and FeO*/Mg, 104Ga/Al ratios, and are characterized by a relative enrichment in LILEs and LREEs, but depletion in Ba, Sr, Eu and Nb. These signatures are similar to those of the high-K calc-alkaline I-type granites, and with some geochemical features of A-type granites as well, suggesting that their formation might be related to a post-collisional setting with transition from compression to extension regimes at ~2.4 Ga. The whole-rock Nd and zircon Hf isotopes suggest important crustal growth occurred at ~2.5-2.8 Ga, and the precursor magmas of both granitoids were derived from partial melting of the Neo-Archean juvenile and ancient crustal components. Collectively, the ~2.37-2.39 Ga magmatic activities in the Quanji Massif took place right after arc-related metamorphism and arc-continent collision, thus probably making up part of the arc-related ~2.4-2.2 Ga magmatic activities, including those in the Trans-North China Orogen and Tarim Craton, NW China. This implies that a prolonged strong subduction

Radiosynthesis and Quality Control of [67Ga]-3,4-dimethoxylated Porphyrin Complex as a Possible Imaging agent

PubMed Central

Paknafas, Azadeh; Fazaeli, Yousef; Jalilian, Amir Reza; Ahmadi, Abbas; Feizi, Shahzad; Kamalidehghan, Mohsen; Rahiminejad, Ali; Khalaj, Ali

2013-01-01

Radiolabeled porphyrins are potential tumor avid radiopharmaceuticals because of their impersonation in the human body, ability to complex various radionuclides, water solubility, low toxicity etc. In this work a radiogallium porphyrin complex has been developed. [67Ga] labeled 5,10,15,20-tetrakis(3,4-dimethoxyphenyl) porphyrin ([67Ga]-TDMPP) was prepared using freshly prepared [67Ga]GaCl3 and 5,10,15,20-tetrakis(3,4-dimethoxyphenyl) porphyrin (H2TDMPP) for 60 min at 100°C. Stability of the complex was checked in final formulation and human serum for 24 h, followed by biodistribution and imaging studies in wild type rats up to 24 h. The radiocomplex was obtained with radiochemical purity >99% (ITLC) and >98% (HPLC), specific activity: 12-15 GBq/mmol. The partition coefficient was determined (log P=1.63). A detailed comparative pharmacokinetic study performed for 67Ga cation and [67Ga]-TDMPP. The complex was mostly washed out from the circulation through kidneys. Myocardial uptake was significantly observed by SPECT and biodistribution studies. Knee and shoulder joints demonstrated significant activity uptake in 2h post injection. Higher water solubility of the complex due to ionic nature of the complex is an advantage for rapid wash-out of the complex from the system, the complex has significant joint uptake compared to other radiolabeled porphyrins which the mechanisms are explained. PMID:24523753

Numerical study of the electronic structure, elastic and optical properties of defect quaternary semiconductor CuGaSnSe4

NASA Astrophysics Data System (ADS)

Shen, Kesheng; Lu, Hai; Zhang, Xianzhou; Jiao, Zhaoyong

2018-06-01

The electronic structure, elastic and optical properties of the defect quaternary semiconductor CuGaSnSe4 in I 4 bar structure are systematically investigated using first-principles calculations. We summarize and discuss some of the studies on CuGaSnSe4 in partially ordered chalcopyrite structure and find that there are three atomic arrangements so far, but it is still uncertain which is the most stable. Through detailed simulation and comparison with the corresponding literature, we get three models and predict that M1 model should be the most stable. The band structure and optical properties of compound CuGaSnSe4, including dielectric constant, refractive index and absorption spectrum, are drawn for a more intuitive understanding. The elastic constants are also calculated, which not only prove that CuGaSnSe4 in I 4 bar structure is stable naturally but also help solve the problem of no data to accurately predict axial thermal expansion coefficients. The calculated values of the zero frequency dielectric constant and refractive index are comparable to those of the corresponding chalcopyrite structure but slightly larger.

40 CFR 52.2224 - Legal authority.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 4 2011-07-01 2011-07-01 false Legal authority. 52.2224 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Tennessee § 52.2224 Legal authority. (a) The requirements of § 51.230(c) of this chapter are not met since the plan does not provide the legal authority for...

40 CFR 52.2224 - Legal authority.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 4 2010-07-01 2010-07-01 false Legal authority. 52.2224 Section 52...) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Tennessee § 52.2224 Legal authority. (a) The requirements of § 51.230(c) of this chapter are not met since the plan does not provide the legal authority for...

Structures, bonding, and reaction chemistry of the neutral organogallium(I) compounds (GaAr)n(n = 1 or 2) (Ar = terphenyl or related ligand): an experimental investigation of Ga-Ga multiple bonding.

PubMed

Hardman, Ned J; Wright, Robert J; Phillips, Andrew D; Power, Philip P

2003-03-05

The synthesis, structure, and properties of several new organogallium(I) compounds are reported. The monovalent compounds GaAr* (Ar* = C(6)H(3)-2,6-Trip(2), Trip = C(6)H(2)-2,4,6-Pr(i)()(3), 1), GaAr# (Ar# = C(6)H(3)-2,6(Bu(t)Dipp)(2), Bu(t)Dipp = C(6)H(2)-2,6-Pr(i)(2)-4-Bu(t)(), 4), and the dimeric (GaAr')(2) (Ar' = C(6)H(3)-2,6-Dipp(2), Dipp = C(6)H(3)-2,6-Pr(i)(2), 6) were synthesized by the reaction of "GaI" with (Et(2)O)LiAr*, (Et(2)O)LiAr# (3), or (LiAr')(2). Compounds 1 and 4 were isolated as green crystals, whereas 6 was obtained as a brown-red crystalline solid. All three compounds dissolved in hydrocarbon solvents to give green solutions and almost identical UV/visible spectra. Cryoscopy of 1 and 6 showed that they were monomeric in cyclohexane. Crystals of 1 and 4 were unsuitable for X-ray crystal structure determinations, but an X-ray data set for 6 showed that it was weakly dimerized in the solid with a long Ga-Ga bond of 2.6268(7) A and a trans-bent CGaGaC core array. The 1,2-diiodo-1,2-diaryldigallane compounds [Ga(Ar*)I](2) (2), [Ga(Ar#)I](2) (5), and [Ga(Ar')I](2) (7) were isolated as byproducts of the synthesis of 1, 4, and 6. The crystal structures of 2 and 7 showed that they had planar ICGaGaCI core arrays with Ga-Ga distances near 2.49 A, consistent with Ga-Ga single bonding. Treatment of 1, 4, and 6 with B(C(6)F(5))(3) immediately afforded the 1:1 donor-acceptor complexes ArGa[B(C(6)F(5))(3)] (Ar = Ar*, 8; Ar#, 9; Ar', 10) that featured almost linear gallium coordination, Ga-B distances near the sum of the covalent radii of gallium and boron, as well as some close Ga...F contacts. Compound 1 also reacted with Fe(CO)(5) under ambient conditions to give Ar*GaFe(CO)(4) (11), which had been previously synthesized by the reaction of GaAr*Cl(2) with Na(2)Fe(CO)(4). Reaction of 1 with 2,3-dimethyl-1,3-butadiene afforded the compound [Ar*GaCH(2)C(Me)C(Me)CH(2)]2 (12) that had a 10-membered 1,5-Ga(2)C(8) ring with no Ga-Ga interaction. Stirring 1 or 6

Effects of leptin replacement alone and with exendin-4 on food intake and weight regain in weight-reduced diet-induced obese rats

PubMed Central

Haver, Alvin; Chelikani, Prasanth K.; Apenteng, Bettye; Perriotte-Olson, Curtis; Anders, Krista; Steenson, Sharalyn; Blevins, James E.

2012-01-01

Weight loss in obese humans produces a relative leptin deficiency, which is postulated to activate potent orexigenic and energy conservation mechanisms to restrict weight loss and promote weight regain. Here we determined whether leptin replacement alone or with GLP-1 receptor agonist exendin-4 attenuates weight regain or promotes greater weight loss in weight-reduced diet-induced obese (DIO) rats. Forty percent restriction in daily intake of a high-fat diet in DIO rats for 4 wk reduced body weight by 12%, body fat by 29%, and plasma leptin by 67% and normalized leptin sensitivity. When food restriction ended, body weight, body fat, and plasma leptin increased rapidly. Daily administration of leptin [3-h intraperitoneal (ip) infusions (4 nmol·kg−1·h−1)] at onset and end of dark period for 3 wk did not attenuate hyperphagia and weight regain, nor did it affect mean daily meal sizes or meal numbers. Exendin-4 (50 pmol·kg−1·h−1) infusions during the same intervals prevented postrestriction hyperphagia and weight regain by normalizing meal size. Coadministration of leptin and exendin-4 did not reduce body weight more than exendin-4 alone. Instead, leptin began to attenuate the inhibitory effects of exendin-4 on food intake, meal size, and weight regain by the end of the second week of administration. Plasma leptin in rats receiving leptin was sevenfold greater than in rats receiving vehicle and 17-fold greater than in rats receiving exendin-4. Together, these results do not support the hypothesis that leptin replacement alone or with exendin-4 attenuates weight regain or promotes greater weight loss in weight-reduced DIO rats. PMID:22510712

A Convenient Route to [68Ga]Ga-MAA for Use as a Particulate PET Perfusion Tracer

PubMed Central

Mathias, Carla J.; Green, Mark A.

2008-01-01

A convenient method is described for compounding [68Ga]Ga-MAA (MAA = macroaggregated human serum albumin) with the eluate of a commercially available TiO2-based 68Ge/68Ga generator. The final [68Ga]Ga-MAA product was obtained with an 81.6 ± 5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8 ± 0.1% (n = 5). Microscopic examination showed the [68Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [68Ga]Ga-MAA suspension, could be completed in 25 minutes. Only 4.4 ± 0.9% of the total 68Ge breakthrough remaining associated with the final [68Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [68Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use. PMID:18640845

Native defect-assisted enhanced response to CH4 near room temperature by Al0.07Ga0.93N nanowires.

PubMed

Parida, Santanu; Das, A; Prasad, Arun K; Ghatak, Jay; Dhara, Sandip

2018-06-26

Gas sensors at low operating temperature with high sensitivity require group III nitrides owing to their high chemical and thermal stabilities. For the first time, Al0.07Ga0.93N nanowires (NWs) have been utilized in CH4 sensing, and it has been demonstrated that they exhibit an improved response compared to GaN NWs at the low operating temperature of 50 °C. Al0.07Ga0.93N NWs have been synthesized via the ion beam mixing process using inert gas ion irradiation on the bilayer of Al/GaN NWs. The sensing mechanism is explained with the help of native defects present in the system. The number of shallow acceptors created by Ga vacancies (VGa) is found to be higher in Al0.07Ga0.93N NWs than in as-grown GaN NWs. The role of the O antisite defect (ON) for the formation of shallow VGa is inferred from photoluminescence spectroscopic analysis. These native defects strongly influence the gas sensing behaviour, which results in enhanced and low-temperature CH4 sensing.

The performance of spinel bulk-like oxygen-deficient CoGa2O4 as an air-cathode catalyst in microbial fuel cell

NASA Astrophysics Data System (ADS)

Liu, Di; Mo, Xiaoping; Li, Kexun; Liu, Yi; Wang, Junjie; Yang, Tingting

2017-08-01

Nano spinel bulk-like CoGa2O4 prepared via a facile hydrothermal method is used as a high efficient electrochemical catalyst in activated carbon (AC) air-cathode microbial fuel cell (MFC). The maximum power density of the modified MFC is 1911 ± 49 mW m-2, 147% higher than the MFC of untreated AC cathode. Transmission electron microscope (TEM) and X-ray diffraction (XRD) exhibit the morphology and crystal structure of CoGa2O4. Rotating disk electrode (RDE) confirms the four-electron pathway at the cathode during the oxygen reduction reaction (ORR). Thermogravimetric analysis (TGA) and X-ray photoelectron spectroscopy (XPS) illustrate that the high rate oxygen vacancy exist in the CoGa2O4. The oxygen vacancy of CoGa2O4 plays an important role in catalytic activity. In a word, the prepared nano spinel bulk-like CoGa2O4 provides an alternative to the costly Pt in air-cathode for power output.

SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nelson, A; Laurence, T; Conway, A

2009-08-04

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure withmore » the goal of optimizing the metal/GaSeTe interface for radiation detector devices.« less

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrova, Olga; Balakrishnan, Ganesh

2017-02-24

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less

GaAsP solar cells on GaP/Si with low threading dislocation density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan

2016-07-18

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The resultsmore » in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.« less

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

Temperature sensing using a Cr:ZnGa2O4 new phosphor

NASA Astrophysics Data System (ADS)

Sharma, S. K.; Glais, E.; Pellerin, M.; Chaneac, C.; Viana, B.

2016-02-01

The luminescence emission of a thermographic phosphor based on trivalent chromium doped ZGO (ZnGa2O4) bulk as well as nanoparticles is here reported. This material has a strong temperature dependence on the optical features such as ratio of their emission bands, bandwidths, bands position as well as the lifetime decay of the Cr3+. This makes this material well suitable as temperature sensor. ZnGa2O4 (ZGO), a normal spinel, exhibits a high brightness persistent luminescence, when doped with Cr3+ ions and shows an emission spectrum centered at 695 nm. At the nanometric scale, ZGO is used for in vivo imaging with a better signal to background ratio than classical fluorescent NIR probes. In this work we investigate the ability of the host to be a new thermographic phosphor. Several optical features are investigated in a broad temperature range (10 K-700 K). A comparison between bulk material and nanoparticles is introduced. The obtained results could be used to determine the optimal design parameters for sensor development.

Synthesis and Characterization of Fe3O4 Nanoparticles using Polyvinyl Alcohol (PVA) as Capping Agent and Glutaraldehyde (GA) as Crosslinker

NASA Astrophysics Data System (ADS)

Budi Hutami Rahayu, Lale; Oktavia Wulandari, Ika; Herry Santjojo, Djoko; Sabarudin, Akhmad

2018-01-01

The use of polyvinyl alcohol (PVA) as a capping agent and glutaraldehyde (GA) as a crosslinker for a synthesis of magnetite (Fe3O4) nanoparticles is able to reduce agglomeration of produced Fe3O4. Additionally, oxidation of Fe3O4 by air could be avoided. The synthesis is carried out in two steps: first step, magnetite (Fe3O4) nanoparticles were prepared by dissolving the FeCl3.6H2O and FeCl2.4H2O in alkaline media (NH3.H2O). The second step, magnetite nanoparticles were coated with polyvinyl alcohol (PVA) and glutaraldehyde (GA) to obtain Fe3O4-PVA-GA. The latter material was then characterized by FTIR to determine the typical functional groups of magnetite coated with PVA-GA. X-ray Diffraction analysis was used to determine structure and size of crystal as well as the percentage of magnetite produced. It was found that the produced nanoparticles have crystal sizes around 4-9 nm with the cubic crystal structure. The percentage of magnetite phase increases when the amount of glutaraldehyde increased. SEM-EDX was employed to assess the surface morphology and elemental composition of the resulted nanoparticles. The magnetic character of the magnetite and Fe3O4- PVA-GA were studied using Electron Spin Resonance.

Cation disorder in MgX2O4 (X = Al, Ga, In) spinels from first principles

NASA Astrophysics Data System (ADS)

Jiang, Chao; Sickafus, Kurt E.; Stanek, Christopher R.; Rudin, Sven P.; Uberuaga, Blas P.

2012-07-01

We have performed first-principles density functional theory calculations to investigate the possible physical origins of the discrepancies between the existing theoretical and experimental studies on cation distribution in MgX2O4 (X = Al, Ga, In) spinel oxides. We show that for MgGa2O4 and MgIn2O4, it is crucial to consider the effects of lattice vibrations to achieve agreement between theory and experiment. For MgAl2O4, we find that neglecting short-range order effects in thermodynamic modeling can lead to significant underestimation of the degree of inversion. Furthermore, we demonstrate that the common practice of representing disordered structures by randomly exchanging atoms within a small periodic supercell can incur large computational error due to either insufficient statistical sampling or finite supercell size effects.

Evaluation of (68)Ga- and (177)Lu-DOTA-PEG4-LLP2A for VLA-4-Targeted PET Imaging and Treatment of Metastatic Melanoma.

PubMed

Beaino, Wissam; Nedrow, Jessie R; Anderson, Carolyn J

2015-06-01

Malignant melanoma is a highly aggressive cancer, and the incidence of this disease is increasing worldwide at an alarming rate. Despite advances in the treatment of melanoma, patients with metastatic disease still have a poor prognosis and low survival rate. New strategies, including targeted radiotherapy, would provide options for patients who become resistant to therapies such as BRAF inhibitors. Very late antigen-4 (VLA-4) is expressed on melanoma tumor cells in higher levels in more aggressive and metastatic disease and may provide an ideal target for drug delivery and targeted radiotherapy. In this study, we evaluated (177)Lu- and (68)Ga-labeled DOTA-PEG4-LLP2A as a VLA-4-targeted radiotherapeutic with a companion PET agent for diagnosis and monitoring metastatic melanoma treatment. DOTA-PEG4-LLP2A was synthesized by solid-phase synthesis. The affinity of (177)Lu- and (68)Ga-labeled DOTA-PEG4-LLP2A to VLA-4 was determined in B16F10 melanoma cells by saturation binding and competitive binding assays, respectively. Biodistribution of the LLP2A conjugates was determined in C57BL/6 mice bearing B16F10 subcutaneous tumors, while PET/CT imaging was performed in subcutaneous and metastatic models. (177)Lu-DOTA-PEG4-LLP2A showed high affinity to VLA-4 with a Kd of 4.1 ± 1.5 nM and demonstrated significant accumulation in the B16F10 melanoma tumor after 4 h (31.5 ± 7.8%ID/g). The tumor/blood ratio of (177)Lu-DOTA-PEG4-LLP2A was highest at 24 h (185 ± 26). PET imaging of metastatic melanoma with (68)Ga-DOTA-PEG4-LLP2A showed high uptake in sites of metastases and correlated with bioluminescence imaging of the tumors. These data demonstrate that (177)Lu-DOTA-PEG4-LLP2A has potential as a targeted therapeutic for treating melanoma as well as other VLA-4-expressing tumors. In addition, (68)Ga-DOTA-PEG4-LLP2A is a readily translatable companion PET tracer for imaging of metastatic melanoma.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

5 CFR 581.305 - Honoring legal process.

Code of Federal Regulations, 2013 CFR

2013-01-01

... GARNISHMENT ORDERS FOR CHILD SUPPORT AND/OR ALIMONY Compliance With Process § 581.305 Honoring legal process... to enforce legal obligation(s) for alimony and/or child support; (4) It does not comply with the... received that the obligor has appealed either the legal process or the underlying alimony and/or child...

5 CFR 581.305 - Honoring legal process.

Code of Federal Regulations, 2012 CFR

2012-01-01

... GARNISHMENT ORDERS FOR CHILD SUPPORT AND/OR ALIMONY Compliance With Process § 581.305 Honoring legal process... to enforce legal obligation(s) for alimony and/or child support; (4) It does not comply with the... received that the obligor has appealed either the legal process or the underlying alimony and/or child...

33 CFR 80.717 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Tybee Island, GA to St. Simons..., GA to St. Simons Island, GA. (a) A line drawn from the southernmost extremity of Savannah Beach on....4′ W.) drawn from the southernmost extremity of Ossabaw Island to St. Catherines Island. (e) A north...

36 CFR 4.11 - Load, weight and size limits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... INTERIOR VEHICLES AND TRAFFIC SAFETY § 4.11 Load, weight and size limits. (a) Vehicle load, weight and size limits established by State law apply to a vehicle operated on a park road. However, the superintendent may designate more restrictive limits when appropriate for traffic safety or protection of the road...

(Ar-39)-(Ar-40) dating of mesosiderites - Evidence for major parent body disruption less than 4 Ga ago

NASA Technical Reports Server (NTRS)

Bogard, D. D.; Jordan, J. L.; Garrison, D. H.; Mittlefehldt, D.

1990-01-01

The (Ar-39) (Ar-40) chronologies were determined for 14 different mesosiderites representing the full range of classification according to recrystallization, and these chronologies were compared with analogous data for other meteorite types and for lunar highland rocks. Results of Ar-Ar chronologies indicate the history of a degassing of Ar due to a major thermal event that occurred less than 3.9 Ga ago; this event is not the metal-silicate mixing event, which is known to have occurred earlier than 4.4 Ga ago. It is suggested that a major collisional disruption-reassembly event less than 3.9 Ga ago took place, leaving the metal-silicate breccias buried under tens of kilometers of rubble, where they cooled slowly through the Ar closure temperatures.

Elemental and Isotopic Tomography at Single-Atom-Scale in 4.0 and 2.4 Ga Zircons

NASA Astrophysics Data System (ADS)

Valley, J. W.; Reinhard, D. A.; Snoeyenbos, D.; Lawrence, D.; Martin, I.; Kelly, T. F.; Ushikubo, T.; Strickland, A.; Cavosie, A. J.

2012-12-01

Atom probe tomography can determine identity (mass/charge ratio) and 3-D position of individual atoms in minerals such as zircon. These data provide unique information for understanding the thermal history and mechanisms of mineral reaction and exchange, including radiation damage. Nine needle-shaped specimens ~100 nm in diameter (at the apex) were sampled from 2 zircons by FIB and analyzed with a local-electrode atom probe (LEAP), CAMECA LEAP 4000X HR. The LEAP uses pulsed-laser heating to field evaporate the tip of a zircon needle and accelerates the ions into a position-sensitive TOF-MS. With due care for complex isobaric interferences (molecules, multiple ionizations) and background correction, it is possible to individually identify up to 10E8 atoms/needle (36% detection efficiency) by mass/charge (MRP ~ 1000@ m/n=16Da) and position (X-Y-Z coordinates on 0.2 nm scale) (Kelly & Larson 2012). The 3-D distribution of Pb and Y differ at atom-scale in the 2 zircons. Zircon #1 (4007 Ma, Jack Hills, W. Australia, Cavosie 2005, Ushikubo et al. 2008, Bouvier et al. 2011) is homogeneous in Pb and Y. In contrast, incompatible elements, including Pb and Y, are concentrated in equant 5-10 nm dia. domains, spaced ~50 nm apart in zircon #2 (2438 Ma, Albion-Raft R-Grouse Ck core complex, Utah, Strickland et al. 2011). U is homogeneously distributed in both zircons. The analyzed domains suffered 4-8 x 10E15 α-decay events/mg due to U and Th decay and yet both zircons yield >97% concordant U-Pb ages by SIMS, suggesting annealing of radiation damage during the life of the zircons. The 207-Pb/206-Pb ratios for these nm-scale domains, as measured by LEAP, average 0.17 for the 2.4 Ga Zrc2 (3 needles) and 0.43 for the 4.0 Ga Zrc1 (5 needles). These ratios are less precise (±40% 2σ) due to ultra-small sample size, but are in excellent agreement with values measured by SIMS, 0.1684 and 0.4269, respectively. Thus Pb in both zircons is radiogenic. The Pb-Y-rich domains and lack of

An Approximately 4.35 Ga Ar-Ar Age for GRA 8 and the Complex Chronology of its Parent Body

NASA Technical Reports Server (NTRS)

Park, J.; Nyquist, Laurence E.; Bogard, D. D.; Garrison, D. H.; Shih, C.-Y.; Reese, Y. D.

2010-01-01

GRA06128 and GRA06129 (hereafter GRA 8 and GRA 9) are partial melts of a parent body of approximately chondritic composition. We reported a conventional Sm-147-Nd-143 isochron age of 4.559+/-0.096 Ga and a 146 Sm-142Nd model age of 4.549+/-0.036 for combined data for the two rocks. Plagioclase plus whole rock and leachate (approx.phosphate) samples gave a secondary Sm-147-Nd-143 age of 3.4+/-0.4 Ga. An Ar-39-Ar-40 age of 4.460+/-0.028 Ga was interpreted as dating metamorphism in GRA 9. We report Ar-39-Ar-40 ages in the range approx.4344-4366 Ma for GRA 8, establishing similar but different Ar-39-Ar-40 ages for the two rocks, consistent with their different Sr-isotopic systematics, and discuss these ages in the context of the complex sequence of events that affected these samples.

An Approximately 4.35 Ga Ar-Ar Age for GRA 8 and the Complex Chronology of its Parent Body

NASA Technical Reports Server (NTRS)

Park, J.; Nyquist, L. E.; Bogard, D. D.; Garrison, D. H.; Shih, C.-Y.; Reese, Y. D.

2010-01-01

GRA06128 and GRA06129 (hereafter GRA 8 and GRA 9) are partial melts of a parent body of approximately chondritic composition. We reported a conventional SM-147Sm-ND_143 isochron age of 4.559 +/-.096 Ga and a SM-146-142Nd model age of 4.549 +/- 0.036 for combined data for the two rocks. Plagioclase plus whole rock and leachate (approximately phosphate) samples gave a secondary SM-147-ND-143 age of 3.4 +/-0.4 Ga. An Ar-39-Ar-40 age of 4.460+/-0.028 Ga was interpreted by as dating metamorphism in GRA 9. We report Ar-39-Ar-40 ages in the range approximately 4344-4366 Ma for GRA 8, establishing similar but different Ar-39-Ar-40 ages for the two rocks, consistent with their different Sr-istopic systematics, and discuss these ages in the context of the complex sequence of events that affected these samples

Loss of G-A base pairs is insufficient for achieving a large opening of U4 snRNA K-turn motif.

PubMed

Cojocaru, Vlad; Klement, Reinhard; Jovin, Thomas M

2005-01-01

Upon binding to the 15.5K protein, two tandem-sheared G-A base pairs are formed in the internal loop of the kink-turn motif of U4 snRNA (Kt-U4). We have reported that the folding of Kt-U4 is assisted by protein binding. Unstable interactions that contribute to a large opening of the free RNA ('k-e motion') were identified using locally enhanced sampling molecular dynamics simulations, results that agree with experiments. A detailed analysis of the simulations reveals that the k-e motion in Kt-U4 is triggered both by loss of G-A base pairs in the internal loop and backbone flexibility in the stems. Essential dynamics show that the loss of G-A base pairs is correlated along the first mode but anti-correlated along the third mode with the k-e motion. Moreover, when enhanced sampling was confined to the internal loop, the RNA adopted an alternative conformation characterized by a sharper kink, opening of G-A base pairs and modified stacking interactions. Thus, loss of G-A base pairs is insufficient for achieving a large opening of the free RNA. These findings, supported by previously published RNA structure probing experiments, suggest that G-A base pair formation occurs upon protein binding, thereby stabilizing a selective orientation of the stems.

Polarized 3-folds in a codimension 10 weighted homogeneous F4 variety

NASA Astrophysics Data System (ADS)

Qureshi, Muhammad Imran

2017-10-01

We describe the construction of a codimension 10 weighted homogeneous variety wΣF4(μ , u) corresponding to the exceptional Lie group F4 by explicit computation of its graded ring structure. We give a formula for the Hilbert series of the generic weighted wΣF4(μ , u) in terms of representation theoretic data of F4. We also construct some families of polarized 3-folds in codimension 10 whose general member is a weighted complete intersection of some wΣF4(μ , u) .

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

PubMed

Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-02-25

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

Enhancement of CO2 Adsorption and Catalytic Properties by Fe-Doping of [Ga2(OH)2(L)] (H4L = Biphenyl-3,3',5,5'-tetracarboxylic Acid), MFM-300(Ga2).

PubMed

Krap, Cristina P; Newby, Ruth; Dhakshinamoorthy, Amarajothi; García, Hermenegildo; Cebula, Izabela; Easun, Timothy L; Savage, Mathew; Eyley, Jennifer E; Gao, Shan; Blake, Alexander J; Lewis, William; Beton, Peter H; Warren, Mark R; Allan, David R; Frogley, Mark D; Tang, Chiu C; Cinque, Gianfelice; Yang, Sihai; Schröder, Martin

2016-02-01

Metal-organic frameworks (MOFs) are usually synthesized using a single type of metal ion, and MOFs containing mixtures of different metal ions are of great interest and represent a methodology to enhance and tune materials properties. We report the synthesis of [Ga2(OH)2(L)] (H4L = biphenyl-3,3',5,5'-tetracarboxylic acid), designated as MFM-300(Ga2), (MFM = Manchester Framework Material replacing NOTT designation), by solvothermal reaction of Ga(NO3)3 and H4L in a mixture of DMF, THF, and water containing HCl for 3 days. MFM-300(Ga2) crystallizes in the tetragonal space group I4122, a = b = 15.0174(7) Å and c = 11.9111(11) Å and is isostructural with the Al(III) analogue MFM-300(Al2) with pores decorated with -OH groups bridging Ga(III) centers. The isostructural Fe-doped material [Ga(1.87)Fe(0.13)(OH)2(L)], MFM-300(Ga(1.87)Fe(0.13)), can be prepared under similar conditions to MFM-300(Ga2) via reaction of a homogeneous mixture of Fe(NO3)3 and Ga(NO3)3 with biphenyl-3,3',5,5'-tetracarboxylic acid. An Fe(III)-based material [Fe3O(1.5)(OH)(HL)(L)(0.5)(H2O)(3.5)], MFM-310(Fe), was synthesized with Fe(NO3)3 and the same ligand via hydrothermal methods. [MFM-310(Fe)] crystallizes in the orthorhombic space group Pmn21 with a = 10.560(4) Å, b = 19.451(8) Å, and c = 11.773(5) Å and incorporates μ3-oxo-centered trinuclear iron cluster nodes connected by ligands to give a 3D nonporous framework that has a different structure to the MFM-300 series. Thus, Fe-doping can be used to monitor the effects of the heteroatom center within a parent Ga(III) framework without the requirement of synthesizing the isostructural Fe(III) analogue [Fe2(OH)2(L)], MFM-300(Fe2), which we have thus far been unable to prepare. Fe-doping of MFM-300(Ga2) affords positive effects on gas adsorption capacities, particularly for CO2 adsorption, whereby MFM-300(Ga(1.87)Fe(0.13)) shows a 49% enhancement of CO2 adsorption capacity in comparison to the homometallic parent material. We thus report

Prospective Evaluation of 68Ga-RM2 PET/MRI in Patients with Biochemical Recurrence of Prostate Cancer and Negative Findings on Conventional Imaging.

PubMed

Minamimoto, Ryogo; Sonni, Ida; Hancock, Steven; Vasanawala, Shreyas; Loening, Andreas; Gambhir, Sanjiv S; Iagaru, Andrei

2018-05-01

68 Ga-labeled DOTA-4-amino-1-carboxymethyl-piperidine-d-Phe-Gln-Trp-Ala-Val-Gly-His-Sta-Leu-NH 2 ( 68 Ga-RM2) is a synthetic bombesin receptor antagonist that targets gastrin-releasing peptide receptor (GRPr). GRPr proteins are highly overexpressed in several human tumors, including prostate cancer (PCa). We present data from the use of 68 Ga-RM2 in patients with biochemical recurrence (BCR) of PCa and negative findings on conventional imaging. Methods: We enrolled 32 men with BCR of PCa, who were 59-83 y old (mean ± SD, 68.7 ± 6.4 y). Imaging started at 40-69 min (mean, 50.5 ± 6.8 min) after injection of 133.2-151.7 MBq (mean, 140.6 ± 7.4 MBq) of 68 Ga-RM2 using a time-of-flight-enabled simultaneous PET/MRI scanner. T1-weighted, T2-weighted, and diffusion-weighted images were acquired. Results: All patients had a rising level of prostate-specific antigen (PSA) (range, 0.3-119.0 ng/mL; mean, 10.1 ± 21.3 ng/mL) and negative findings on conventional imaging (CT or MRI, and a 99m Tc-methylene diphosphonate bone scan) before enrollment. The observed 68 Ga-RM2 PET detection rate was 71.8%. 68 Ga-RM2 PET identified recurrent PCa in 23 of the 32 participants, whereas the simultaneous MRI scan identified findings compatible with recurrent PCa in 11 of the 32 patients. PSA velocity was 0.32 ± 0.59 ng/mL/y (range, 0.04-1.9 ng/mL/y) in patients with negative PET findings and 2.51 ± 2.16 ng/mL/y (range, 0.13-8.68 ng/mL/y) in patients with positive PET findings ( P = 0.006). Conclusion: 68 Ga-RM2 PET can be used for assessment of GRPr expression in patients with BCR of PCa. High uptake in multiple areas compatible with cancer lesions suggests that 68 Ga-RM2 is a promising PET radiopharmaceutical for localization of disease in patients with BCR of PCa and negative findings on conventional imaging. © 2018 by the Society of Nuclear Medicine and Molecular Imaging.

Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl

NASA Astrophysics Data System (ADS)

Ingerly, D. B.; Chen, Y.; William, R. S.; Takeuchi, T.; Chang, Y. A.

2000-07-01

The intermetallic compound NiAl (50:50 at. %) has been shown to be a low-resistance ohmic contact to n-GaN and n-AlGaN. NiAl contacts on n-GaN (n=2.5×1017cm-3) had a specific contact resistance of 9.4×10-6 Ω cm2 upon annealing at 850 °C for 5 min. NiAl contacts annealed at 900 °C for 5 min in n-Al0.12Ga0.88N (n=2.4×1018cm-3) and n-Al0.18Ga0.82N (n=2.7×1018cm-3) had specific contact resistances of 2.1×10-5 Ω cm2 and 4.7×10-5 Ω cm2, respectively. Additionally, these contacts were subjected to long-term annealing at 600 °C for 100 h. On n-GaN, the contact specific contact resistance degraded from 9.4×10-6 Ω cm2 to 5.3×10-5 Ω cm2 after the long-term anneal. Contacts to n-Al0.18Ga0.82N showed only slight degradation with a change in contact resistance, from 4.7×10-5 Ω cm2 to 9.2×10-5 Ω cm2. These results demonstrate the NiAl has great promise as a stable, low-resistance contact, particularly to n-AlGaN used in high-temperature applications.

40 CFR 52.1275 - Legal authority.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 4 2014-07-01 2014-07-01 false Legal authority. 52.1275 Section 52.1275 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Mississippi § 52.1275 Legal authority. (a...

40 CFR 52.1275 - Legal authority.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 4 2013-07-01 2013-07-01 false Legal authority. 52.1275 Section 52.1275 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Mississippi § 52.1275 Legal authority. (a...

40 CFR 52.1275 - Legal authority.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 4 2010-07-01 2010-07-01 false Legal authority. 52.1275 Section 52.1275 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Mississippi § 52.1275 Legal authority. (a...

40 CFR 52.1275 - Legal authority.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 4 2012-07-01 2012-07-01 false Legal authority. 52.1275 Section 52.1275 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Mississippi § 52.1275 Legal authority. (a...

40 CFR 52.2025 - Legal authority.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 4 2010-07-01 2010-07-01 false Legal authority. 52.2025 Section 52.2025 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Pennsylvania § 52.2025 Legal authority. (a...

40 CFR 52.1275 - Legal authority.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 4 2011-07-01 2011-07-01 false Legal authority. 52.1275 Section 52.1275 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Mississippi § 52.1275 Legal authority. (a...

40 CFR 52.2025 - Legal authority.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 4 2011-07-01 2011-07-01 false Legal authority. 52.2025 Section 52.2025 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS (CONTINUED) Pennsylvania § 52.2025 Legal authority. (a...

Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-03-01

In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal κ-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 °C in a vacuum media. The coating of the κ-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies.

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

NASA Astrophysics Data System (ADS)

Dragone, A.; Kenney, C.; Lozinskaya, A.; Tolbanov, O.; Tyazhev, A.; Zarubin, A.; Wang, Zhehui

2016-11-01

A multilayer stacked X-ray camera concept is described. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detection [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

Liu, Jie; Shen, Bo; Wang, Mao-Jun; Zhou, Yu-Gang; Chen, Dun-Jun; Zhang, Rong; Shi, Yi; Zheng, You-Dou

2004-01-01

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012 cm-2eV-1, and the time constant is about 1 mus. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

The impact of legalized abortion on child health outcomes and abandonment. Evidence from Romania.

PubMed

Mitrut, Andreea; Wolff, François-Charles

2011-12-01

We use household survey data and a unique census of institutionalized children to analyze the impact of abortion legalization in Romania. We exploit the lift of the abortion ban in December 1989, when communist dictator Ceausescu and his regime were removed from power, to understand its impact on children's health at birth and during early childhood and whether the lift of the ban had an immediate impact on child abandonment. We find insignificant estimates for health at birth outcomes and anthropometric z-scores at age 4 and 5, except for the probability of low birth weight which is slightly higher for children born after abortion became legal. Additionally, our findings suggest that the lift of the ban had decreased the number of abandoned children. Copyright © 2011 Elsevier B.V. All rights reserved.

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yi-Chen; Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Chiang, Te-Kuang

2015-10-15

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightlymore » smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.« less

Tasmania in Nuna: Witness to a ~1.4 Ga East Antarctica-Laurentia Connection

NASA Astrophysics Data System (ADS)

Halpin, J. A.; Mulder, J. A.; Daczko, N. R.

2015-12-01

Most recent reconstructions of the supercontinent Nuna juxtapose the North Australian craton, Mawson continent (South Australia-East Antarctica), and Laurentia between 1.6 Ga and 1.3 Ga, but differ in their relative positioning. Tasmania (SE Australia) has not been considered in previous Nuna reconstructions. Prior to late Neoproterozoic rifting, this crustal fragment was likely part of the eastern margin of East Antarctica. The significance of Tasmania's position within Nuna has recently been highlighted with the discovery that the majority of a >10-km-thick marine shelfal package exposed in northwest Tasmania (Rocky Cape Group) was deposited between 1.45 and 1.30 Ga. The detrital zircon signatures of these strata are distinct from other Mesoproterozoic basins in Australia, and instead closely resemble time-equivalent upper parts of the Belt-Purcell Basin of Laurentia, suggesting correlations within Nuna. We investigate the provenance of the Rocky Cape Group quartzites by comparing new detrital zircon U-Pb-Hf isotopic data to an extensive compilation of zircon data from Australia, East Antarctica, and Laurentia. Our analysis demonstrates that the Rocky Cape Group is unlikely to have been sourced from any geological terrane exposed in present-day Australia. Instead, zircon isotopic signatures from basement terranes in Laurentia and East Antarctica show striking similarities to the Rocky Cape Group detrital signature. Paleocurrent data indicate a northwest-southeast-trending paleoshoreline
and suggest that the majority of sediment was sourced from Paleoproterozoic crust in SW Laurentia, which was to the southeast (present-day coordinates) of Tasmania. These new data support a SWEAT-like (southwest United States-East Antarctica) configuration for Nuna. We suggest that rifting propagated southward from ca. 1.4 Ga, leaving a thinned continental connection between East Antarctica and southwest Laurentia onto which the lower-middle RCG was deposited prior to 1.3 Ga.

40 CFR 52.1379 - Legal authority.

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2013-07-01

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40 CFR 52.2173 - Legal authority.

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2011-07-01

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40 CFR 52.2074 - Legal authority.

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2011-07-01

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2010-07-01

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2010-07-01

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2011-07-01

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2011-07-01

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2011-07-01

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2014-07-01

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2010-07-01

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2011-07-01

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2013-07-01

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40 CFR 52.1074 - Legal authority.

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2011-07-01

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40 CFR 52.1575 - Legal authority.

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2010-07-01

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40 CFR 52.1379 - Legal authority.

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2010-07-01

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40 CFR 52.2574 - Legal authority.

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2010-07-01

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Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

48 CFR 915.404-4-70-8 - Weighted guidelines application considerations.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Weighted guidelines....404-4-70-8 Weighted guidelines application considerations. The Department has developed internal procedures to aid the contracting officer in the application of weighted guidelines and to assure a...

28 CFR 543.11 - Legal research and preparation of legal documents.

Code of Federal Regulations, 2014 CFR

2014-07-01

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28 CFR 543.11 - Legal research and preparation of legal documents.

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2011-07-01

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28 CFR 543.11 - Legal research and preparation of legal documents.

Code of Federal Regulations, 2010 CFR

2010-07-01

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28 CFR 543.11 - Legal research and preparation of legal documents.

Code of Federal Regulations, 2012 CFR

2012-07-01

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28 CFR 543.11 - Legal research and preparation of legal documents.

Code of Federal Regulations, 2013 CFR

2013-07-01

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45 CFR 615.4 - Legal proceedings before NSF or in which the United States is a party.

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2012-10-01

... (Continued) NATIONAL SCIENCE FOUNDATION TESTIMONY AND PRODUCTION OF RECORDS § 615.4 Legal proceedings before... employee may testify for the United States both as to facts within the employee's personal knowledge and as... only as to facts within his or her personal knowledge. ...

45 CFR 615.4 - Legal proceedings before NSF or in which the United States is a party.

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2011-10-01

... (Continued) NATIONAL SCIENCE FOUNDATION TESTIMONY AND PRODUCTION OF RECORDS § 615.4 Legal proceedings before... employee may testify for the United States both as to facts within the employee's personal knowledge and as... only as to facts within his or her personal knowledge. ...

45 CFR 615.4 - Legal proceedings before NSF or in which the United States is a party.

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2013-10-01

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2010-10-01

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2014-10-01

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11 CFR 111.4 - Complaints (2 U.S.C. 437g(a)(1)).

Code of Federal Regulations, 2012 CFR

2012-01-01

... 11 Federal Elections 1 2012-01-01 2012-01-01 false Complaints (2 U.S.C. 437g(a)(1)). 111.4 Section... knowledge and statements based upon information and belief. (d) The complaint should conform to the... accompanied by an identification of the source of information which gives rise to the complainants belief in...

11 CFR 111.4 - Complaints (2 U.S.C. 437g(a)(1)).

Code of Federal Regulations, 2010 CFR

2010-01-01

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11 CFR 111.4 - Complaints (2 U.S.C. 437g(a)(1)).

Code of Federal Regulations, 2011 CFR

2011-01-01

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11 CFR 111.4 - Complaints (2 U.S.C. 437g(a)(1)).

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2014-01-01

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45 CFR 1624.5 - Accessibility of legal services.

Code of Federal Regulations, 2010 CFR

2010-10-01

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45 CFR 1624.5 - Accessibility of legal services.

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2011-10-01

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45 CFR 1624.5 - Accessibility of legal services.

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2014-10-01

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45 CFR 1624.5 - Accessibility of legal services.

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2013-10-01

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Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE PAGES

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya; ...

2016-11-29

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

Ab initio prediction of stable nanotwin double layers and 4O structure in Ni2MnGa

NASA Astrophysics Data System (ADS)

Zelený, Martin; Straka, Ladislav; Sozinov, Alexei; Heczko, Oleg

2016-12-01

The ab initio electronic structure calculations of the Ni2MnGa alloy indicate that the orthorhombic 4O structure exhibits the lowest energy compared to all known martensitic structures. The 4O structure is formed by nanotwin double layers, i.e., oppositely oriented nanotwins consisting of two (101) lattice planes of nonmodulated martensitic structure. It exhibits the lowest occupation of density of states at the Fermi level. The total energy 1.98 meV/atom below the energy of nonmodulated martensite is achieved within structural relaxation by shifting Mn and Ga atoms at the nanotwin boundaries. The same atomic shift can also be found in other martensitic nanotwinned or modulated structures such as 10M and 14M, which indicates the importance of the nanotwin double layer for the stability of these structures. Our discovery shows that the nanotwinning or modulation is a natural property of low-temperature martensitic phases in Ni-Mn-Ga alloys.

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

2015-04-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

Hydrogenation of GaSb/GaAs quantum rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Zhuang, Q. D.

2014-08-25

We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is verymore » likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.« less

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

PubMed

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Enhanced photoluminescence property and broad color emission of ZnGa2O4 phosphor due to the synergistic role of Eu3+ and carbon dots

NASA Astrophysics Data System (ADS)

Huo, Qiuyue; Tu, Weixia; Guo, Lin

2017-10-01

ZnGa2O4 phosphors co-composited with nanoscale carbon dots (CDs) and Eu3+ were presented for the tunable color emission. Novel single phase CDs or/and Eu3+ composited ZnGa2O4 phosphors were synthesized by microwave hydrothermal method and their optical properties were investigated. The ZnGa2O4 phosphors composited with CDs exhibited an intense broad blue light emission at 421 nm and a more enhanced photoluminescence intensity than those without CDs. The Eu3+ composited ZnGa2O4 phosphors gave an ideal red color emission. The CDs/Eu3+ co-composited ZnGa2O4 phosphors exhibited a wide emission band peak at 450 nm and narrow emission peak at 618 nm. Furthermore, the tunable color emissions of CDs/Eu3+ co-composited ZnGa2O4 phosphors from blue to the white light region, and then to red were obtained with the increasing Eu3+ concentration, which can be a promising single phased phosphor candidate in light emitting diodes. Broadly tunable emission single phased phosphor is tuned firstly through the synergistic role of the non-metal element and the rare earth metal ions.

Negative thermal expansion and magnetoelastic coupling in the breathing pyrochlore lattice material LiGaCr4S8

NASA Astrophysics Data System (ADS)

Pokharel, G.; May, A. F.; Parker, D. S.; Calder, S.; Ehlers, G.; Huq, A.; Kimber, S. A. J.; Arachchige, H. Suriya; Poudel, L.; McGuire, M. A.; Mandrus, D.; Christianson, A. D.

2018-04-01

The physical properties of the spinel LiGaCr4S8 have been studied with neutron diffraction, x-ray diffraction, magnetic susceptibility, and heat capacity measurements. The neutron diffraction and synchrotron x-ray diffraction data reveal negative thermal expansion (NTE) below 111(4) K. The magnetic susceptibility deviates from Curie-Weiss behavior with the onset of NTE. At low temperature a broad peak in the magnetic susceptibility at 10.3(3) K is accompanied by the return of normal thermal expansion. First-principles calculations find a strong coupling between the lattice and the simulated magnetic ground state. These results indicate strong magnetoelastic coupling in LiGaCr4S8 .

Twins in spirit - episode I: comparative preclinical evaluation of [(68)Ga]DOTATATE and [(68)Ga]HA-DOTATATE.

PubMed

Schottelius, Margret; Šimeček, Jakub; Hoffmann, Frauke; Willibald, Marina; Schwaiger, Markus; Wester, Hans-Jürgen

2015-01-01

Recently, an intra-patient comparison demonstrated that the somatostatin (sst) ligand [(68)Ga]HA-DOTATATE ([(68)Ga]DOTA-3-iodo-Tyr(3)-octreotate) provides PET images comparable to or superior to those obtained with [(68)Ga]DOTATATE. To provide a comprehensive basis for nevertheless observed slight differences in tracer biodistribution and dosimetry, the characteristics of [(68)Ga]HA-DOTATATE were investigated in a detailed preclinical study. Affinities of (nat)Ga-HA-DOTATATE and (nat)Ga-DOTATATE to sst1-5 were determined using membrane preparations and [(125)I]SST-28 as radioligand. Internalization into AR42J cells was studied in dual-tracer studies with [(125)I]TOC as internal reference. Biodistribution was investigated using AR42J tumor-bearing CD1 mice, and specificity of tracer uptake was confirmed in competition studies by coinjection of 0.8 mg TOC/kg. Sst2 affinities (IC50) of [(nat)Ga]HA-DOTATATE (1.4 ± 0.8 nM, logP: -3.16) and [(nat)Ga]DOTATATE (1.2 ± 0.6 nM, logP: -3.69) were nearly identical. Both compounds displayed IC50 > 1 μM for sst1,3,4, while sst5 affinity was markedly increased for (nat)Ga-HA-DOTATATE (102 ± 65 nM vs >1 μM for (nat)Ga-DOTATATE). [(nat)Lu]HA-DOTATATE and [(nat)Lu]DOTATATE showed slightly lower, identical sst2 affinities (2.0 ± 1.6 and 2.0 ± 0.8 nM, respectively) and sst3 affinities of 93 ± 1 and 162 ± 16 nM. Internalization of [(68)Ga]HA-DOTATATE was tenfold higher than that of [(125)I]TOC but only sixfold higher for [(68)Ga]DOTATATE and [(177)Lu]HA-DOTATATE. While [(68)Ga]HA-DOTATATE and [(68)Ga]DOTATATE had shown similar target- and non-target uptake in patients, biodistribution studies in mice at 1 h post injection (n = 5) revealed slightly increased non-specific uptake of [(68)Ga]HA-DOTATATE in the blood, liver, and intestines (0.7 ± 0.3, 1.0 ± 0.2, and 4.0 ± 0.7 %iD/g vs 0.3 ± 0.1, 0.5 ± 0.1, and 2.7 ± 0.8 %iD/g for [(68)Ga]DOTATATE). However, sst

A review of lunar chronology revealing a preponderance of 4.34-4.37 Ga ages

DOE PAGES

Borg, Lars E.; Gaffney, Amy M.; Shearer, Charles K.

2014-11-24

In this study, data obtained from Sm-Nd and Rb-Sr isotopic measurements of lunar highlands’ samples are renormalized to common standard values and then used to define ages with a common isochron regression algorithm. The reliability of these ages is evaluated using five criteria that include whether: (1) the ages are defined by multiple isotopic systems, (2) the data demonstrate limited scatter outside uncertainty, (3) initial isotopic compositions are consistent with the petrogenesis of the samples, (4) the ages are defined by an isotopic system that is resistant to disturbance by impact metamorphism, and (5) the rare-earth element abundances determined bymore » isotope dilution of bulk of mineral fractions match those measured by in situ analyses. From this analysis, it is apparent that the oldest highlands’ rock ages are some of the least reliable, and that there is little support for crustal ages older than ~4.40 Ga. A model age for ur-KREEP formation calculated using the most reliable Mg-suite Sm-Nd isotopic systematics, in conjunction with Sm-Nd analyses of KREEP basalts, is 4389 ± 45 Ma. This age is a good match to the Lu-Hf model age of 4353 ± 37 Ma determined using a subset of this sample suite, the average model age of 4353 ± 25 Ma determined on mare basalts with the 146Sm- 142Nd isotopic system, with a peak in Pb-Pb ages observed in lunar zircons of ~4340 ± 20 Ma, and the oldest terrestrial zircon age of 4374 ± 6 Ma. The preponderance of ages between 4.34 and 4.37 Ga reflect either primordial solidification of a lunar magma ocean or a widespread secondary magmatic event on the lunar nearside. The first scenario is not consistent with the oldest ages reported for lunar zircons, whereas the second scenario does not account for concordance between ages of crustal rocks and mantle reservoirs.« less

38 CFR 1.960 - Legal and technical assistance.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2014-07-01 2014-07-01 false Legal and technical... GENERAL PROVISIONS Referrals to Gao, Department of Justice, Or Irs § 1.960 Legal and technical assistance. Legal questions involving a determination under § 2.6(e)(4) of this chapter will be referred to the...

38 CFR 1.960 - Legal and technical assistance.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 1 2013-07-01 2013-07-01 false Legal and technical... GENERAL PROVISIONS Referrals to Gao, Department of Justice, Or Irs § 1.960 Legal and technical assistance. Legal questions involving a determination under § 2.6(e)(4) of this chapter will be referred to the...

Legal Basics for Teachers. Fastback 235.

ERIC Educational Resources Information Center

Monks, Robert L.; Proulx, Ernest I.

This fastback presents some basic legal gidelines for teachers, which if observed will minimize the possibility of lawsuits resulting from incidents occurring in school settings. The following topics are covered: (1) basic legal terminology; (2) reporting child abuse; (3) self-defense; (4) possession and use of controlled substances; (5)…

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

NASA Astrophysics Data System (ADS)

Karpov, S. Y.; Zakheim, D. A.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Brunkov, P. N.; Lundina, E. Y.; Tsatsulnikov, A. F.

2018-02-01

In situ growth of an ultra-thin (up to 2.5 nm) Si3N4 film on the top of n-GaN is shown to reduce remarkably the height of the barrier formed by deposition of Ni-based Schottky contact. The reduction is interpreted in terms of polarization dipole induced at the Si3N4/n-GaN interface and Fermi level pinning at the Ni/Si3N4 interface. Detailed study of temperature-dependent current-voltage characteristics enables identification of the electron transport mechanism in such Schottky diodes under forward bias: thermal/field electron emission over the barrier formed in n-GaN followed by tunneling through the Si3N4 film. At reverse bias and room temperature, the charge transfer is likely controlled by Poole-Frenkel ionization of deep traps in n-GaN. Tunneling exponents at forward and reverse biases and the height of the Ni/Si3N4 Schottky barrier are evaluated experimentally and compared with theoretical predictions.

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

2007-09-28

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

NASA Astrophysics Data System (ADS)

Saarinen, K.; Suski, T.; Grzegory, I.; Look, D. C.

2001-12-01

We have applied positron annihilation spectroscopy to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1 cm-1. The Ga vacancies recover in long-range migration processes at 500-600 K with an estimated migration energy of 1.5 (2) eV. Since the native Ga vacancies in as-grown GaN survive up to much higher temperatures (1300-1500 K), we conclude that they are stabilized by forming complexes with oxygen impurities. The estimated binding energy of 2.2 (4) eV of such complexes is in good agreement with the results of theoretical calculations.

Enhancement of CO2 Adsorption and Catalytic Properties by Fe-Doping of [Ga2(OH)2(L)] (H4L = Biphenyl-3,3′,5,5′-tetracarboxylic Acid), MFM-300(Ga2)

PubMed Central

2016-01-01

Metal–organic frameworks (MOFs) are usually synthesized using a single type of metal ion, and MOFs containing mixtures of different metal ions are of great interest and represent a methodology to enhance and tune materials properties. We report the synthesis of [Ga2(OH)2(L)] (H4L = biphenyl-3,3′,5,5′-tetracarboxylic acid), designated as MFM-300(Ga2), (MFM = Manchester Framework Material replacing NOTT designation), by solvothermal reaction of Ga(NO3)3 and H4L in a mixture of DMF, THF, and water containing HCl for 3 days. MFM-300(Ga2) crystallizes in the tetragonal space group I4122, a = b = 15.0174(7) Å and c = 11.9111(11) Å and is isostructural with the Al(III) analogue MFM-300(Al2) with pores decorated with −OH groups bridging Ga(III) centers. The isostructural Fe-doped material [Ga1.87Fe0.13(OH)2(L)], MFM-300(Ga1.87Fe0.13), can be prepared under similar conditions to MFM-300(Ga2) via reaction of a homogeneous mixture of Fe(NO3)3 and Ga(NO3)3 with biphenyl-3,3′,5,5′-tetracarboxylic acid. An Fe(III)-based material [Fe3O1.5(OH)(HL)(L)0.5(H2O)3.5], MFM-310(Fe), was synthesized with Fe(NO3)3 and the same ligand via hydrothermal methods. [MFM-310(Fe)] crystallizes in the orthorhombic space group Pmn21 with a = 10.560(4) Å, b = 19.451(8) Å, and c = 11.773(5) Å and incorporates μ3-oxo-centered trinuclear iron cluster nodes connected by ligands to give a 3D nonporous framework that has a different structure to the MFM-300 series. Thus, Fe-doping can be used to monitor the effects of the heteroatom center within a parent Ga(III) framework without the requirement of synthesizing the isostructural Fe(III) analogue [Fe2(OH)2(L)], MFM-300(Fe2), which we have thus far been unable to prepare. Fe-doping of MFM-300(Ga2) affords positive effects on gas adsorption capacities, particularly for CO2 adsorption, whereby MFM-300(Ga1.87Fe0.13) shows a 49% enhancement of CO2 adsorption capacity in comparison to the homometallic parent material. We thus report herein the

Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

NASA Astrophysics Data System (ADS)

Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2018-05-01

Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

Direct evidence for cycloidal modulations in the thermal-fluctuation-stabilized spin spiral and skyrmion states of GaV4S8

NASA Astrophysics Data System (ADS)

White, J. S.; Butykai, Á.; Cubitt, R.; Honecker, D.; Dewhurst, C. D.; Kiss, L. F.; Tsurkan, V.; Bordács, S.

2018-01-01

We report small-angle neutron scattering studies of the lacunar spinel GaV4S8 , which reveal the long-wavelength magnetic phases to be cycloidally modulated. Upon cooling, these modulated phases, including a recently proposed Néel-type skyrmion phase, transform into a simple ferromagnetic state. These results indicate the modulated phases in GaV4S8 gain their stability from thermal fluctuations, while at lower temperatures the ferromagnetic state emerges in accord with the strong easy-axis magnetic anisotropy. Crucially, our study provides microscopic evidence that the skyrmions in GaV4S8 indeed display a Néel-type helicity. More generally, our approach can be applied to evidence the helicity of any bulk skyrmion phase.

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8

NASA Astrophysics Data System (ADS)

Butykai, Ádám; Bordács, Sándor; Kézsmárki, István; Tsurkan, Vladimir; Loidl, Alois; Döring, Jonathan; Neuber, Erik; Milde, Peter; Kehr, Susanne C.; Eng, Lukas M.

2017-03-01

GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four <111> axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.

Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

DTIC Science & Technology

2017-10-01

showing double the power of a single 1.2-mm HEMT with 55% PAE at a comparable gain compression level. 3. Summary and Conclusion A preliminary design of...combined, 2.4-mm HEMT power amplifier should achieve comparable performance based on a preliminary design using ideal, lossless matching elements. For...ARL-TR-8180 ● OCT 2017 US Army Research Laboratory Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs by

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Umbilical choline and related methylamines betaine and dimethylglycine in relation to birth weight.

PubMed

Hogeveen, Marije; den Heijer, Martin; Semmekrot, Ben A; Sporken, Jan M; Ueland, Per M; Blom, Henk J

2013-06-01

Low birth weight (LBW) is associated with increased morbidity and mortality for the newborn and risk of chronic disease in adulthood. Choline plays an essential role in the integrity of cell membranes, methylation reactions, and memory development. We examined whether choline, betaine, and dimethylglycine (DMG) concentrations were associated with LBW in Dutch women. Blood was sampled from umbilical cords (UCs) at delivery in singleton pregnancies (n = 1,126). Maternal blood was sampled at 30-34 wk of gestational age (GA) (n = 366). We calculated birth weights standardized for GA and defined LBW as standardized birth weight ≤ 2,500 g. Maternal concentrations were lower as compared with UC concentrations and were not associated with birth weight. UC choline and betaine were inversely associated with birth weight (β = -60 (-89, -31) and β = -65 (-94, -36), respectively), whereas UC DMG was positively associated with birth weight (β = 35 (6.1, 63)). Odds ratios for LBW were 4.12 (1.15, 14.78), 5.68 (1.24, 25.91), and 0.48 (0.09, 2.65) for the highest UC choline, betaine, and DMG quartiles, respectively, as compared with the lowest quartiles. We observed an increased risk of LBW with increased umbilical choline and betaine in venous UC blood. These results might reflect a change in choline consumption or metabolism or a disturbed placental function.

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Kunrugsa, Maetee

2018-06-01

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Mathematics Deficiencies in Children with Very Low Birth Weight or Very Preterm Birth

ERIC Educational Resources Information Center

Taylor, H. Gerry; Espy, Kimberly Andrews; Anderson, Peter J.

2009-01-01

Children with very low birth weight (VLBW, less than 1500 g) or very preterm birth (VPTB, less than 32 weeks gestational age or GA) have more mathematics disabilities or deficiencies (MD) and higher rates of mathematics learning disabilities (MLD) than normal birth weight term-born children (NBW, greater than 2500 g and greater than 36 weeks GA).…

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

Measurement of second order susceptibilities of GaN and AlGaN

NASA Astrophysics Data System (ADS)

Sanford, N. A.; Davydov, A. V.; Tsvetkov, D. V.; Dmitriev, A. V.; Keller, S.; Mishra, U. K.; DenBaars, S. P.; Park, S. S.; Han, J. Y.; Molnar, R. J.

2005-03-01

Rotational Maker fringes, scaled with respect to χ11(2) of crystalline quartz, were used to determine the second order susceptibilities χ31(2) and χ33(2) for samples of thin AlxGa1-xN films, a thicker GaN film, and a free-standing GaN platelets. The pump wavelength was 1064nm. The AlxGa1-xN samples, ranging in thickness from roughly 0.5to4.4μm, were grown by metalorganic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE) on (0001) sapphire substrates. The Al mole fractions x were 0, 0.419, 0.507, 0.618, 0.660, and 0.666, for the MOCVD-grown samples, and x =0, 0.279, 0.363, and 0.593 for the HVPE-grown samples. An additional HVPE-grown GaN sample ˜70μm thick was also examined. The free-standing bulk GaN platelets consisted of an HVPE grown film ˜226μm thick removed from its growth substrate, and a crystal ˜160μm thick grown by high-pressure techniques. For the AlxGa1-xN samples, the magnitudes of χ31(2) and χ33(2) decrease roughly linearly with increasing x and extrapolate to ˜0 for x =1. Furthermore, the constraint expected for a perfect wurtzite structure, namely χ33(2)=-2χ31(2), was seldom observed, and the samples with x =0.660 and x =0.666 showed χ31(2) and χ33(2) having the same sign. These results are consistent with the theoretical studies of nonlinear susceptibilities for AlN and GaN performed by Chen et al. [Appl. Phys. Lett. 66, 1129 (1995)]. The thicker bulk GaN samples displayed a complex superposition of high- and low-frequency Maker fringes due to the multiple-pass interference of the pump and second-harmonic generation beams, and the nonlinear coefficients were approximately consistent with those measured for the thin-film GaN sample.

Development of a 4-15 μm infrared GaAs hyperspectral QWIP imager

NASA Astrophysics Data System (ADS)

Jhabvala, M.; Gunapala, S.; Reuter, D.; Choi, K. K.; Bandara, S.; Liu, J.; La, A.; Banks, S.; Cho, J.; Hwang, T.; Tsay, S.; Rafol, D.; Huet, H.; Chauvet, N.; Huss, T.

2003-10-01

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4-15.4 μm wavelength region. This effort was a collaboration between NASA's Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5-5.7 μm, Band 2; 8.5-10 μm, Band 3; 10-12 μm and Band 4; 13.3-14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four "broad" bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.

Structural and optical characterization of terbium doped ZnGa{sub 2}O{sub 4} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Somasundaram, K.; Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi-642001; Girija, K. G., E-mail: kgirija@barc.gov.in

2016-05-23

Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa{sub 2}O{sub 4} host emission band along with a strong terbium emission and the thin films showedmore » only broad host emission band and there was no terbium ion emission.« less

Legal considerations during pediatric emergency mass critical care events.

PubMed

Courtney, Brooke; Hodge, James G

2011-11-01

Recent public health emergencies, such as the 2009 Influenza A/H1N1 Pandemic and Hurricane Katrina, underscore the importance of developing healthcare response plans and protocols for disasters impacting large populations. Significant research and scholarship, including the 2009 Institute of Medicine report on crisis standards of care and the 2008 Task Force for Mass Critical Care recommendations, provide guidance for healthcare responses to catastrophic emergencies. Most of these efforts recognize but do not focus on the unique needs of pediatric populations. In 2008, the Centers for Disease Control and Prevention supported the formation of a task force to address pediatric emergency mass critical care response issues, including legal issues. Liability is a significant concern for healthcare practitioners and facilities during pediatric emergency mass critical care that necessitates a shift to crisis standards of care. This article describes the legal considerations inherent in planning for and responding to catastrophic health emergencies and makes recommendations for pediatric emergency mass critical care legal preparedness. The Pediatric Emergency Mass Critical Care Task Force, composed of 36 experts from diverse public health, medical, and disaster response fields, convened in Atlanta, GA, on March 29-30, 2010, to review the pediatric emergency mass critical care recommendations developed by a 17-member steering committee. During the meeting, experts determined that the recommendations would be strengthened by a manuscript addressing legal issues. Authors drafted the manuscript through consensus-based study of peer-reviewed research, literature reviews, and expert opinion. The manuscript was reviewed by Pediatric Emergency Mass Critical Care Steering Committee members and additional legal counsel and revised. While the legal issues associated with providing pediatric emergency mass critical care are not unique within the overall context of disaster healthcare

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

NASA Astrophysics Data System (ADS)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

[Caloric intake in parenteral nutrition of very low weight infants].

PubMed

Maggio, L; Gallini, F; De Carolis, M P; Frezza, S; Greco, F

1994-10-01

To evaluate the efficacy of a measure able to compare energy intake from parenteral and enteral nutrition we documented growth patterns in a group of VLBW infants treated with parenteral nutrition (PN). To analyze comparative energy intake from the two sources we expressed a percentage of both parenteral and enteral calories: the former (RCP%) related to an optimal value of 85 non protein calories and the latter (RCE%) to an optimal value of 150 total calories. Total energy intake was planned on the RCT% (RCP% + RCE%). We studied 75 VLBW infants with a mean BW of 1040 g and a mean GA of 29.5 weeks. The mean duration of PN was 25.8 +/- 10.4 days. The initial weight loss (10.2 +/- 5.3%), the time to regain BW (5.5 +/- 4 days) and the day of lowest weight (5.2 +/- 1.6 day of life) were in the normal range; the subsequent growth rate resulted 25.9 +/- 9.2 g/kg/die and did not change for different GA or BW. Growth pattern about head circumference and length were above the third percentile. The mean age of RCT% = 100% was 11.4 +/- 4.8 days of PN; this value was higher for the more premature infants. Severe metabolic abnormalities were not detected. Our observations show the efficacy of the RCT% as index of energy from both enteral and parenteral source during PN: the growth pattern seems to be quite satisfactory without any severe metabolic complication.

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

NASA Astrophysics Data System (ADS)

Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

2012-02-01

The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

[68Ga]Pentixafor-PET/CT for imaging of chemokine receptor CXCR4 expression in multiple myeloma - Comparison to [18F]FDG and laboratory values.

PubMed

Lapa, Constantin; Schreder, Martin; Schirbel, Andreas; Samnick, Samuel; Kortüm, Klaus Martin; Herrmann, Ken; Kropf, Saskia; Einsele, Herrmann; Buck, Andreas K; Wester, Hans-Jürgen; Knop, Stefan; Lückerath, Katharina

2017-01-01

Chemokine (C-X-C motif) receptor 4 (CXCR4) is a key factor for tumor growth and metastasis in several types of human cancer including multiple myeloma (MM). Proof-of-concept of CXCR4-directed radionuclide therapy in MM has recently been reported. This study assessed the diagnostic performance of the CXCR4-directed radiotracer [ 68 Ga]Pentixafor in MM and a potential role for stratifying patients to CXCR4-directed therapies. Thirty-five patients with MM underwent [ 68 Ga]Pentixafor-PET/CT for evaluation of eligibility for endoradiotherapy. In 19/35 cases, [ 18 F]FDG-PET/CT for correlation was available. Scans were compared on a patient and on a lesion basis. Tracer uptake was correlated with standard clinical parameters of disease activity. [ 68 Ga]Pentixafor-PET detected CXCR4-positive disease in 23/35 subjects (66%). CXCR4-positivity at PET was independent from myeloma subtypes, cytogenetics or any serological parameters and turned out as a negative prognostic factor. In the 19 patients in whom a comparison to [ 18 F]FDG was available, [ 68 Ga]Pentixafor-PET detected more lesions in 4/19 (21%) subjects, [ 18 F]FDG proved superior in 7/19 (37%). In the remaining 8/19 (42%) patients, both tracers detected an equal number of lesions. [ 18 F]FDG-PET positivity correlated with [ 68 Ga]Pentixafor-PET positivity (p=0.018). [ 68 Ga]Pentixafor-PET provides further evidence that CXCR4 expression frequently occurs in advanced multiple myeloma, representing a negative prognostic factor and a potential target for myeloma specific treatment. However, selecting patients for CXCR4 directed therapies and prognostic stratification seem to be more relevant clinical applications for this novel imaging modality, rather than diagnostic imaging of myeloma.

Continuous excitations of the triangular-lattice quantum spin liquid YbMgGaO 4

DOE PAGES

Paddison, Joseph A. M.; Daum, Marcus; Dun, Zhiling; ...

2016-12-05

A quantum spin liquid (QSL) is an exotic state of matter in which electrons’ spins are quantum entangled over long distances, but do not show magnetic order in the zero-temperature limit. The observation of QSL states is a central aim of experimental physics, because they host collective excitations that transcend our knowledge of quantum matter; however, examples in real materials are scarce. We report neutron-scattering experiments on YbMgGaO 4, a QSL candidate in which Yb 3+ ions with effective spin-1/2 occupy a triangular lattice. Furthermore, our measurements reveal a continuum of magnetic excitations—the essential experimental hallmark of a QSL7—at verymore » low temperature (0.06 K). The origin of this peculiar excitation spectrum is a crucial question, because isotropic nearest-neighbour interactions do not yield a QSL ground state on the triangular lattice. In using measurements the field-polarized state, we identify antiferromagnetic next-nearest-neighbour interactions spin-space anisotropies and chemical disorder between the magnetic layers as key ingredients in YbMgGaO 4.« less

Impurity optical absorption spectra of ZnGa 2Se 4:Ni 2+ single crystals

NASA Astrophysics Data System (ADS)

Kim, Wha-Tek; Jin, Moon-Seog; Cheon, Seung-Ho; Kim, Yong-Geun; Park, Byong-Seo

1990-04-01

The optical absorption of single crystals of ZnGa 2Se 4:Ni 2+ grown by the chemical transport reaction method was investigated in the temperature region 20-300 K. In the single crystals the impurity optical absorption peaks due to the transitions 3T1( 3F) → 3T2( 3F), 3T1( 3F) → 3A2( 3F) and 3T1( 3F) → 3T1( 3P) of the Ni 2+ ions sited in the host lattice of the ZnGa 2Se 4 single crystal with Td symmetry appeared at 4444, 7874 and 11 600 cm -1, respectively. The crystal-field parameter and the Racah parameter were given by Dq = 340 cm -1 and B = 615 cm -1, respectively. The peak due to the transition 3T1( 3F) → 3T1( 3P) split into four levels by first order spin-orbit-coupling effects of Ni 2+ ions in the lower temperature below 150 K. The spin-orbit-coupling parameter was found to be λ = -400 cm -1.

Negative thermal expansion and magnetoelastic coupling in the breathing pyrochlore lattice material LiGaCr 4 S 8

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pokharel, G.; May, A. F.; Parker, D. S.

In this paper, the physical properties of the spinel LiGaCr 4S 8 have been studied with neutron diffraction, x-ray diffraction, magnetic susceptibility, and heat capacity measurements. The neutron diffraction and synchrotron x-ray diffraction data reveal negative thermal expansion (NTE) below 111(4) K. The magnetic susceptibility deviates from Curie-Weiss behavior with the onset of NTE. At low temperature a broad peak in the magnetic susceptibility at 10.3(3) K is accompanied by the return of normal thermal expansion. First-principles calculations find a strong coupling between the lattice and the simulated magnetic ground state. Finally, these results indicate strong magnetoelastic coupling in LiGaCrmore » 4S 8.« less

Negative thermal expansion and magnetoelastic coupling in the breathing pyrochlore lattice material LiGaCr 4 S 8

DOE PAGES

Pokharel, G.; May, A. F.; Parker, D. S.; ...

2018-04-30

In this paper, the physical properties of the spinel LiGaCr 4S 8 have been studied with neutron diffraction, x-ray diffraction, magnetic susceptibility, and heat capacity measurements. The neutron diffraction and synchrotron x-ray diffraction data reveal negative thermal expansion (NTE) below 111(4) K. The magnetic susceptibility deviates from Curie-Weiss behavior with the onset of NTE. At low temperature a broad peak in the magnetic susceptibility at 10.3(3) K is accompanied by the return of normal thermal expansion. First-principles calculations find a strong coupling between the lattice and the simulated magnetic ground state. Finally, these results indicate strong magnetoelastic coupling in LiGaCrmore » 4S 8.« less

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Das, Saikat; Izyumskaya, Natalia; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

32 CFR 727.6 - Functions of legal assistance officers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... with their personal legal problems, or refer such persons to a civilian lawyer as provided in § 727.9... personal legal problems and may prepare and sign correspondence on behalf of a client, negotiate with..., persons eligible for assistance in connection with their personal legal problems. (4) Shall, subject to...

32 CFR 727.6 - Functions of legal assistance officers.

Code of Federal Regulations, 2011 CFR

2011-07-01

... with their personal legal problems, or refer such persons to a civilian lawyer as provided in § 727.9... personal legal problems and may prepare and sign correspondence on behalf of a client, negotiate with..., persons eligible for assistance in connection with their personal legal problems. (4) Shall, subject to...

Accurate Descriptions of Hot Flow Behaviors Across β Transus of Ti-6Al-4V Alloy by Intelligence Algorithm GA-SVR

NASA Astrophysics Data System (ADS)

Wang, Li-yong; Li, Le; Zhang, Zhi-hua

2016-09-01

Hot compression tests of Ti-6Al-4V alloy in a wide temperature range of 1023-1323 K and strain rate range of 0.01-10 s-1 were conducted by a servo-hydraulic and computer-controlled Gleeble-3500 machine. In order to accurately and effectively characterize the highly nonlinear flow behaviors, support vector regression (SVR) which is a machine learning method was combined with genetic algorithm (GA) for characterizing the flow behaviors, namely, the GA-SVR. The prominent character of GA-SVR is that it with identical training parameters will keep training accuracy and prediction accuracy at a stable level in different attempts for a certain dataset. The learning abilities, generalization abilities, and modeling efficiencies of the mathematical regression model, ANN, and GA-SVR for Ti-6Al-4V alloy were detailedly compared. Comparison results show that the learning ability of the GA-SVR is stronger than the mathematical regression model. The generalization abilities and modeling efficiencies of these models were shown as follows in ascending order: the mathematical regression model < ANN < GA-SVR. The stress-strain data outside experimental conditions were predicted by the well-trained GA-SVR, which improved simulation accuracy of the load-stroke curve and can further improve the related research fields where stress-strain data play important roles, such as speculating work hardening and dynamic recovery, characterizing dynamic recrystallization evolution, and improving processing maps.

Interfacial recombination at /AlGa/As/GaAs heterojunction structures

NASA Technical Reports Server (NTRS)

Ettenberg, M.; Kressel, H.

1976-01-01

Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.

The band structure of birefractive CdGa2S4 crystals

NASA Astrophysics Data System (ADS)

Stamov, I. G.; Syrbu, N. N.; Parvan, V. I.; Zalamai, V. V.; Tiginyanu, I. M.

2013-11-01

In this paper, we report on the spectral dependence of Δn=no-ne for CdGa2S4 single crystals for shorter and longer wavelengths than the isotropic wavelength λ0=485.7 nm (300 K). It was established that Δn is positive at λ>λ0 and it is negative in the spectral range λ<λ0. The isotropic wavelength λ0 exhibits blue spectral shift with temperature decreasing. The ground and excited states of three excitonic series A, B and C with binding energies of 53 meV, 52 meV and 46 meV, respectively, were found out at 10 K. The effective masses of electrons for k=0 were derived from the calculation of excitonic spectra: mc∥(Е∥с)=0.21m0 and mc⊥(Е⊥с)=0.19m0. The holes masses are equal to 0.59m0 and 0.71m0 for Е∥с and Е⊥с, respectively. The value of valence bands splitting, V1-V2, by crystalline field equals 24 meV, and V2-V3 splitting due to the spin-orbital interaction equals to 130 meV. The optical functions n, k, ε1 and ε2 for Е⊥с and Е∥с polarizations were calculated by means of Kramers-Kronig analyses in the energy interval 3-6 eV. The evidenced features are discussed taking into account the results of new theoretical calculations of CdGa2S4 band structure.

Selective etching of InGaAs/GaAs(100) multilayers of quantum-dot chains

NASA Astrophysics Data System (ADS)

Wang, Zh. M.; Zhang, L.; Holmes, K.; Salamo, G. J.

2005-04-01

We report selective chemical etching as a promising procedure to study the buried quantum dots in multiple InGaAs/GaAs layers. The dot layer-by-dot layer etching is demonstrated using a mixed solution of NH4OH:H2O2:H2O. Regular plan-view atomic force microscopy reveals that all of the exposed InGaAs layers have a chain-like lateral ordering despite the potential of significant In-Ga intermixing during capping. The vertical self-correlation of quantum dots in the chains is observed.

High field ESR study of the pi-d interaction effect in beta-(BDA-TTP)2MCl4 (M=Fe, Ga)

NASA Astrophysics Data System (ADS)

Tokumoto, Takahisa; Vantol, J.; Brunel, L.-C.; Choi, E. S.; Brooks, J. S.; Kaihatsu, T.; Akutsu, H.; Yamada, J.

2007-03-01

Novel magnetic organic conductors with pi-d interaction have commanded attention since the discovery of field induced superconductivity. One of them, beta-(BDA-TTP)2FeCl4, has alternating donor molecules and quasi 2D electrical properties. Previous studies of electrical and magnetic properties show an M-I transition at 120K and an AF transition at TN=8.5K, suggesting an exchange interaction between the conduction electrons and the Fe^3+ d-electrons. The properties of beta-(BDA-TTP)2GaCl4 are similar with exception of the absence of the AF transition, which is apparently due to the absence of pi-d exchange interaction. We report angular/temperature dependent 240GHz quasi optical ESR measurements on both compounds to probe the magnetic properties. The Ga compound signals follow the donor molecule structure, and show no magnetic order at any temperature. The Fe compound signals are quite different from the Ga compound, and exhibit AF behavior below TN. The difference of Fe and Ga compounds will be discussed in terms of the interaction between localized and itinerant magnetic moments.

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

NASA Astrophysics Data System (ADS)

Bacuyag, Dhonny; Escaño, Mary Clare Sison; David, Melanie; Tani, Masahiko

2018-06-01

We performed first-principles calculations based on density functional theory (DFT) to investigate the role of point defects in the structural, electronic, and optical properties of the GaAs(001)- β2(2x4). In terms of structural properties, AsGa is the most stable defect structure, consistent with experiments. With respect to the electronic structure, band structures revealed the existence of sub-band and midgap states for all defects. The induced sub-bands and midgap states originated from the redistributions of charges towards these defects and neighboring atoms. The presence of these point defects introduced deep energy levels characteristic of EB3 (0.97 eV), EL4 (0.52 eV), and EL2 (0.82 eV) for AsGa, GaAs, GaV, respectively. The optical properties are found to be strongly related to these induced gap states. The calculated onset values in the absorption spectra, corresponding to the energy gaps, confirmed the absorption below the known bulk band gap of 1.43 eV. These support the possible two-step photoabsorption mediated by midgap states as observed in experiments.

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhanovskaya, N. V., E-mail: NataliaKryzh@gmail.com; Polubavkina, Yu. S.; Nevedomskiy, V. N.

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of themore » emission line.« less

NWA 7034 Martian breccia: Ar/Ar ages of ca. 1.2 to 1.4 Ga

NASA Astrophysics Data System (ADS)

Cohen, B. E.; Mark, D. F.; Cassata, W.; Lee, M. R.; Smith, C. L.

2015-12-01

NWA 7034 and its paired stones are some of the oldest and most diverse of the Martian meteorites. They are complex polymict breccias of impact, igneous, and sedimentary clasts set in a dark grey matrix [1; 2]. The rock also contains angular mineral fragments, including K-feldspar, plagioclase feldspar, and pyroxene [1; 2]. Mineral fragments are often > 1 mm wide, and clasts can be > 1 cm. This diverse breccia assemblage indicates formation via repeated impact events, supported by Rb-Sr, Sm-Nd and U-Pb ages ranging from 1.3 to 4.4 Ga [1, 2, and references therein]. In this study we investigate the distribution of ages yielded by Ar/Ar, with nine aliquots analyzed to date, and additional analyses planned. In order to analyze only single phases, chips of matrix/clasts were restricted to visibly monomict fragments < 1 mm diameter, while mineral separates were analyzed as single crystals. Cosmogenic Ar corrections are from [3]. Analyses were undertaken at SUERC and Lawrence Livermore National Laboratory, and the results pooled. The bulk of aliquots (n = 8) yielded ages of ca. 1.2-1.4 Ga indicating a major thermal event occurred at around the same time as crystallization of the Nakhlite group of meteorites. Select step ages are considerably older (> 2 Ga), supporting results of other chronometers that much older material is present in this sample. These results also demonstrate that some older fragments retained Ar during breccia formation. [1] Wittmann A. et al. (2015) Meteoritics & Planet. Sci., 50, 326-352. [2] Santos A. R. et al. (2015) GCA, 157, 56-85. [3] Cassata W. S., and Borg L. E. (2015) 46th LPSC, Abstract #2742.

What is legal medicine--are legal and forensic medicine the same?

PubMed

Beran, Roy G

2010-04-01

Some consider the terms "forensic" and "legal" medicine to be synonymous but this is counter to the title of the Faculty of Forensic and Legal Medicine or the dual strands for progression to fellowship of the Australian College of Legal Medicine. The paper examines a very brief historical background to legal medicine and develops a definition of the strands thereof, namely legal and forensic medicine. It demonstrates that the two are different components of the application of medical knowledge upon the legal system. Legal medicine has greater relevance to civil and tort law, impacting upon patient care, whereas forensic medicine relates to criminal law and damage to, or by, patients.

Effect of citric acid on material properties of ZnGa2O4:Cr3+ nanopowder prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Hussen, Megersa K.; Dejene, Francis B.; Gonfa, Girma G.

2018-05-01

This paper reports the material properties of Cr3+ (1.0 mol%)-doped ZnGa2O4 nanopowders prepared by citric acid-assisted sol-gel method with metal cations (Zn + Ga) to citric (M:CA) molar ratios of (1:0.5, 1:1, 1:3 and 1:4). The X-ray diffraction (XRD) results show that the synthesized nanoparticles are cubic structured and concentration of citric acid did not affect the structure. The scanning electron microscope (SEM) shows that the increase of the M:CA molar ratio favors the formation of smaller nano particle of ZnGa2O4:Cr3+. The photoluminescence (PL) is found to be maximum for sample with M:CA ratio of 1:1. Further increase in citric acid leads to significant decrease in the PL intensity. Energy-dispersive X-ray spectroscopy (EDS) measurement confirms the presence of the Zn, Ga, O and Cr ions. Ultraviolet-visible (UV-Vis) spectrophotometer measurement shows an increase in reflectance in visible region and the energy band gap was found to decrease with an increase in citric acid molar ratio. The emission spectra, particle size and photoluminescence lifetimes are comparable with reports on bioimaging applications.

20 CFR 725.512 - Support of legally dependent spouse, child, or parent.

Code of Federal Regulations, 2012 CFR

2012-04-01

... Provisions § 725.512 Support of legally dependent spouse, child, or parent. If current maintenance needs of a... the legally dependent spouse, a legally dependent child, or a legally dependent parent of the... 20 Employees' Benefits 4 2012-04-01 2012-04-01 false Support of legally dependent spouse, child...

20 CFR 725.512 - Support of legally dependent spouse, child, or parent.

Code of Federal Regulations, 2014 CFR

2014-04-01

... Provisions § 725.512 Support of legally dependent spouse, child, or parent. If current maintenance needs of a... the legally dependent spouse, a legally dependent child, or a legally dependent parent of the... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false Support of legally dependent spouse, child...

20 CFR 725.512 - Support of legally dependent spouse, child, or parent.

Code of Federal Regulations, 2013 CFR

2013-04-01

... Provisions § 725.512 Support of legally dependent spouse, child, or parent. If current maintenance needs of a... the legally dependent spouse, a legally dependent child, or a legally dependent parent of the... 20 Employees' Benefits 4 2013-04-01 2013-04-01 false Support of legally dependent spouse, child...

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

The diffusion of a Ga atom on GaAs(001)β2(2 × 4): Local superbasin kinetic Monte Carlo

NASA Astrophysics Data System (ADS)

Lin, Yangzheng; Fichthorn, Kristen A.

2017-10-01

We use first-principles density-functional theory to characterize the binding sites and diffusion mechanisms for a Ga adatom on the GaAs(001)β 2(2 × 4) surface. Diffusion in this system is a complex process involving eleven unique binding sites and sixteen different hops between neighboring binding sites. Among the binding sites, we can identify four different superbasins such that the motion between binding sites within a superbasin is much faster than hops exiting the superbasin. To describe diffusion, we use a recently developed local superbasin kinetic Monte Carlo (LSKMC) method, which accelerates a conventional kinetic Monte Carlo (KMC) simulation by describing the superbasins as absorbing Markov chains. We find that LSKMC is up to 4300 times faster than KMC for the conditions probed in this study. We characterize the distribution of exit times from the superbasins and find that these are sometimes, but not always, exponential and we characterize the conditions under which the superbasin exit-time distribution should be exponential. We demonstrate that LSKMC simulations assuming an exponential superbasin exit-time distribution yield the same diffusion coefficients as conventional KMC.

GaAs Surface Passivation for Device Applications.

DTIC Science & Technology

1981-12-01

Ga203.’" . QI. a) / b) x 2.5 •• 24 21 18 As3d a) b) x 2. / 0 II 2 46 43 40 BINDING ENERGY (eV) Fig. 3 XPS spectra from a Ga2O3 covered GaAs surface of Ga...wU 24 21 Gas 18 SAs3d As2O3 ) .. 46 43 40 BINDING ENERGY (e) Fig. 4 XPS spectra from a AsJ03- Ga2O3 covered GaAs surface of Ga 3d (upper panel) and As

First principles examination of electronic structure and optical features of 4H-GaN1-xPx polytype alloys

NASA Astrophysics Data System (ADS)

Laref, A.; Hussain, Z.; Laref, S.; Yang, J. T.; Xiong, Y. C.; Luo, S. J.

2018-04-01

By using first-principles calculations, we compute the electronic band structures and typical aspects of the optical spectra of hexagonally structured GaN1-xPx alloys. Although a type III-V semiconductor, GaP commonly possesses a zinc-blende structure with an indirect band gap; as such, it may additionally form hexagonal polytypes under specific growth conditions. The electronic structures and optical properties are calculated by combining a non-nitride III-V semiconductor and a nitride III-V semiconductor, as GaP and GaN crystallizing in a 4H polytype, with the N composition ranging between x = 0-1. For all studied materials, the energy gap is found to be direct. The optical properties of the hexagonal materials may illustrate the strong polarization dependence owing to the crystalline anisotropy. This investigation for GaN1-xPx alloys is anticipated to supply paramount information for applications in the visible/ultraviolet spectral regions. At a specific concentration, x, these alloys would be exclusively appealing candidates for solar-cell applications.

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

2015-11-15

Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gainmore » of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.« less

Legal consequences of kleptomania.

PubMed

Grant, Jon E; Odlaug, Brian L; Davis, Andrew A; Kim, Suck Won

2009-12-01

Although studies have examined clinical characteristics of kleptomania, no previous studies have examined the legal consequences of kleptomania. From 2001 to 2007, 101 adult subjects (n = 27 [26.7%] males) with DSM-IV kleptomania were assessed on sociodemographics and clinical characteristics including symptom severity, comorbidity, and legal repercussions. Of 101 subjects with kleptomania, 73.3% were female. Mean age of shoplifting onset was 19.4 +/- 12.0 years, and subjects shoplifted a mean of 8.2 +/- 11.0 years prior to meeting full criteria for kleptomania. Co-occurring depressive, substance use, and impulse control disorders were common. Sixty-nine subjects with kleptomania (68.3%) had been arrested, 36.6% had been arrested but not convicted, 20.8% had been convicted and incarcerated after conviction, while only 10.9% had been convicted and not incarcerated after conviction. Kleptomania is associated with significant legal repercussions. The findings emphasize the need for rigorous treatment approaches to target kleptomania symptoms and prevent re-offending.

Legally high? Legal considerations of Salvia divinorum.

PubMed

Griffin, O Hayden; Miller, Bryan Lee; Khey, David N

2008-06-01

The legal status of the hallucinogenic plant Salvia divinorum has been rapidly changing. Legal prohibitions on this plant native to Oaxaca, Mexico have emerged at the state level, a phenomenon that has not occurred since the passage of the Controlled Substances Act (CSA). Included will be a brief description of the plant that has only recently crept into the popular American consciousness, and a review of the different legal mechanisms through which states have controlled the plant and the pending legislation proposing controls. Lastly, the implications of various state laws are discussed.

Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

DTIC Science & Technology

1992-12-01

AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

26 CFR 1.662(a)-4 - Amounts used in discharge of a legal obligation.

Code of Federal Regulations, 2012 CFR

2012-04-01

... a trust in case of divorce, etc.) applies. The term legal obligation includes a legal obligation to... sentence to support his minor child if under local law property or income from property owned by the child... local law a mother may use the resources of a child for the child's support in lieu of supporting him...

26 CFR 1.662(a)-4 - Amounts used in discharge of a legal obligation.

Code of Federal Regulations, 2013 CFR

2013-04-01

... a trust in case of divorce, etc.) applies. The term legal obligation includes a legal obligation to... sentence to support his minor child if under local law property or income from property owned by the child... local law a mother may use the resources of a child for the child's support in lieu of supporting him...

26 CFR 1.662(a)-4 - Amounts used in discharge of a legal obligation.

Code of Federal Regulations, 2014 CFR

2014-04-01

... a trust in case of divorce, etc.) applies. The term legal obligation includes a legal obligation to... sentence to support his minor child if under local law property or income from property owned by the child... local law a mother may use the resources of a child for the child's support in lieu of supporting him...

26 CFR 1.662(a)-4 - Amounts used in discharge of a legal obligation.

Code of Federal Regulations, 2011 CFR

2011-04-01

... a trust in case of divorce, etc.) applies. The term legal obligation includes a legal obligation to... sentence to support his minor child if under local law property or income from property owned by the child... local law a mother may use the resources of a child for the child's support in lieu of supporting him...

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

The Assessment for Sensitivity of a NO2 Gas Sensor with ZnGa2O4/ZnO Core-Shell Nanowires—a Novel Approach

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Hsu, Cheng-Liang; Hsueh, Ting Jen; Shieh, Tien-Yu

2010-01-01

The application of novel core-shell nanowires composed of ZnGa2O4/ZnO to improve the sensitivity of NO2 gas sensors is demonstrated in this study. The growth of ZnGa2O4/ZnO core-shell nanowires is performed by reactive evaporation on patterned ZnO:Ga/SiO2/Si templates at 600 °C. This is to form the homogeneous structure of the sensors investigated in this report to assess their sensitivity in terms of NO2 detection. These novel NO2 gas sensors were evaluated at working temperatures of 25 °C and at 250 °C, respectively. The result reveals the ZnGa2O4/ZnO core-shell nanowires present a good linear relationship (R2 > 0.99) between sensitivity and NO2 concentration at both working temperatures. These core-shell nanowire sensors also possess the highest response (<90 s) and recovery (<120 s) values with greater repeatability seen for NO2 sensors at room temperature, unlike traditional sensors that only work effectively at much higher temperatures. The data in this study indicates the newly-developed ZnGa2O4/ZnO core-shell nanowire based sensors are highly promising for industrial applications. PMID:22319286

Attitudes Toward Medical Cannabis Legalization Among Serbian Medical Students.

PubMed

Vujcic, Isidora; Pavlovic, Aleksandar; Dubljanin, Eleonora; Maksimovic, Jadranka; Nikolic, Aleksandra; Sipetic-Grujicic, Sandra

2017-07-29

Currently, medical cannabis polices are experiencing rapid changes, and an increasing number of nations around the world legalize medical cannabis for certain groups of patients, including those in Serbia. To determine medical students' attitudes toward medical cannabis legalization and to examine the factors influencing their attitudes. Fourth-year medical students at the Faculty of Medicine, University of Belgrade, had participated in a cross-sectional study. Data were collected by an anonymous questionnaire. Overall, 63.4% students supported medical cannabis legalization, and only 20.8% supported its legalization for recreational use. Students who previously used marijuana (p <.001) and alcohol (p =.004) were significantly more in favor of medical cannabis legalization compared with students who never used them. Support for marijuana recreational use was also related to prior marijuana (p <.001) and alcohol consumption (p =.006). Only cancer (90.4%) and chronic pain (74.2%) were correctly reported approved medical indications by more than half the students. Students who supported medical cannabis legalization showed better knowledge about indications, in contrast to opponents for legalization who showed better knowledge about side effects. Beliefs that using medical cannabis is safe and has health benefits were correlated with support for legalization, and previous marijuana and alcohol use, while beliefs that medical cannabis poses health risks correlated most strongly with previous marijuana use. Conclusions/Importance: The medical students' attitudes toward medical cannabis legalization were significantly correlated with previous use of marijuana and alcohol, knowledge about medical indications and side effects, and their beliefs regarding medical cannabis health benefits and risks.

21 CFR 177.1440 - 4,4′-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10,000.

Code of Federal Regulations, 2013 CFR

2013-04-01

...) INDIRECT FOOD ADDITIVES: POLYMERS Substances for Use as Basic Components of Single and Repeated Use Food Contact Surfaces § 177.1440 4,4′-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10... may be safely used as articles or components of articles intended for use in producing, manufacturing...

21 CFR 177.1440 - 4,4′-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10,000.

Code of Federal Regulations, 2012 CFR

2012-04-01

...) INDIRECT FOOD ADDITIVES: POLYMERS Substances for Use as Basic Components of Single and Repeated Use Food Contact Surfaces § 177.1440 4,4′-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10... may be safely used as articles or components of articles intended for use in producing, manufacturing...

Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths.

PubMed

Ajay, Akhil; Blasco, Rodrigo; Polaczynski, Jakub; Spies, Maria; den Hertog, Martien; Monroy, Eva

2018-06-27

In this paper, we study intersubband characteristics of GaN/AlN and GaN/Al0.4Ga0.6N heterostructures in GaN nanowires structurally designed to absorb in the mid-infrared wavelength region. Increasing the GaN well width from 1.5 to 5.7 nm leads to a red shift of the intersubband absorption from 1.4 to 3.4 µm. The red shift in larger quantum wells is amplified by the fact that one of the GaN/AlN heterointerfaces (corresponding to the growth of GaN on AlN) is not sharp but rather a graded alloy extending around 1.5-2 nm. Using AlGaN instead of AlN for the same barrier dimensions, we observe the effects of reduced polarization, which blue shifts the band-to-band transitions and red shifts the intersubband transitions. In heavily doped GaN/AlGaN nanowires, a broad absorption band is observed in the 4.5-6.4 µm spectral region. © 2018 IOP Publishing Ltd.

Proterozoic events recorded in quartzite cobbles at Jack Hills, Western Australia: New constraints on sedimentation and source of > 4 Ga zircons

NASA Astrophysics Data System (ADS)

Grange, Marion L.; Wilde, Simon A.; Nemchin, Alexander A.; Pidgeon, Robert T.

2010-03-01

Rare heavy mineral bands within quartzite cobbles were identified in two conglomerate units within the Jack Hills belt, Western Australia. Seven zircon-bearing cobbles were analysed from one location (site 152) and three from another (site 154), both approximately 1 km west of the site where zircons in excess of 4 Ga are abundant (W74 'discovery' site). Individual pebbles from the 152 site reveal three distinctive features, containing either zircons > 3.0 Ga in age, < 1.9 Ga in age or a range of ages from ˜ 1.2 to ˜ 3.6 Ga. Those from site 154 are more uniform, containing only zircons with ages between 3.1 and 3.9 Ga. Only one grain > 4 Ga was discovered from the entire suite of pebbles, in contrast to the well-studied W74 site. A single detrital zircon with an age of 1220 ± 42 Ma from location 152 is the youngest grain so far reported from sedimentary rocks at Jack Hills. It shows magmatic oscillatory zoning and thus implies at least two sedimentary cycles within the Proterozoic; requiring erosion of an igneous precursor, incorporation into a clastic sediment, induration and subsequent erosion and transport to be hosted in the conglomerate. The nearest source for rocks of this age is the Bangemall Supergroup in the Collier Basin, ˜ 100 km northeast in the Capricorn Orogen. This would imply tectonic interleaving of originally more extensive Bangemall rocks, possibly related to activity along the Cargarah Shear Zone that traverses the Jack Hills belt. The lack of > 4.1 Ga zircons in the pebbles is highly significant, suggesting the immediate source of ancient zircons was no longer present at the Earth's surface. This equates with a general lack of ancient crystals noted in rocks that contain Proterozoic zircons from previous studies and implies that such grains diminish in number as earlier sedimentary rocks were successively recycled.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

The Law of the People (Dine Bibee Haz'Aannii): A Bicultural Approach to Legal Education for Navajo Students, Volume 4.

ERIC Educational Resources Information Center

Vicenti, Dan; And Others

Volume 4 of a 4-volume bilingual bicultural law-related curriculum examines Navajo community life as it is affected by certain laws. Getting a job, obtaining assistance from welfare and other agencies, and preserving one's individual rights as an employee or as a student are all aspects of daily living with important legal ramifications. This unit…

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.

PubMed

Shen, J; Song, Y; Lee, M L; Cha, J J

2014-11-21

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

Gallium isotope fractionation during Ga adsorption on calcite and goethite

NASA Astrophysics Data System (ADS)

Yuan, Wei; Saldi, Giuseppe D.; Chen, JiuBin; Vetuschi Zuccolini, Marino; Birck, Jean-Louis; Liu, Yujie; Schott, Jacques

2018-02-01

Gallium (Ga) isotopic fractionation during its adsorption on calcite and goethite was investigated at 20 °C as a function of the solution pH, Ga aqueous concentration and speciation, and the solid to solution ratio. In all experiments Ga was found to be enriched in light isotopes at the solid surface with isotope fractionation △71Gasolid-solution up to -1.27‰ and -0.89‰ for calcite and goethite, respectively. Comparison of Ga isotopic data of this study with predictions for 'closed system' equilibrium and 'Rayleigh fractionation' models indicates that the experimental data are consistent with a 'closed system' equilibrium exchange between the fluid and the solid. The results of this study can be interpreted based on Ga aqueous speciation and the structure of Ga complexes formed at the solid surfaces. For calcite, Ga isotope fractionation is mainly triggered by increased Ga coordination and Ga-O bond length, which vary respectively from 4 and 1.84 Å in Ga(OH)4- to 6 and 1.94 Å in the >Ca-O-GaOH(OH2)4+ surface complex. For goethite, despite the formation of Ga hexa-coordinated >FeOGa(OH)20 surface complexes (Ga-O distances of 1.96-1.98 Å) both at acid and alkaline pH, a similar extent of isotope fractionation was found at acid and alkaline pH, suggesting that Ga(OH)4- is preferentially adsorbed on goethite for all investigated pH conditions. In addition, the observed decrease of Ga isotope fractionation magnitude observed with increasing Ga surface coverage for both calcite and goethite is likely related to the formation of Ga surface polymers and/or hydroxides with reduced Ga-O distances. This first study of Ga isotope fractionation during solid-fluid interactions suggests that the adsorption of Ga by oxides, carbonates or clay minerals could yield significant Ga isotope fractionation between secondary minerals and surficial fluids including seawater. Ga isotopes thus should help to better characterize the surficial biogeochemical cycles of gallium and its

[Legal consequences in cases of child abuse].

PubMed

Clauß, D; Richter, C; Klohs, G; Heide, S

2013-09-01

Medical child protection includes besides interdisciplinary diagnostics and treatment of physical and psychological symptoms also a discussion that looks at the ensuing legal consequences.This study analyses 21 criminally investigated cases of suspected child abuse from a 2 year study period and compares severity of injury to legal outcome.7 of those 21 criminal proceedings were already dropped by the prosecution and never went to trial. 4 of the 8 cases that led to a trial ended with a conviction. In all of the 4 cases that resulted in an acquittal the judges had been convinced that the child had been abused but found themselves unable to exactly identify the perpetrator. Our study's cases did not show a positive correlation between severity of injury and legal outcome.Diagnosing and treating children and minors within the context of medical child protection should always also include the ques-tion of possible legal consequences. The judicial process in cases of serious child abuse requires high medical expertise. Such expertise particularly includes the ability to determine the time of injury as exactly as possible and to provide precise written documentation of any medical findings. However, our study also shows that medical assessment is only one of many aspects in the legal response to child abuse. © Georg Thieme Verlag KG Stuttgart · New York.

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

NASA Technical Reports Server (NTRS)

Henderson, R. H.; Sun, D.; Towe, E.

1995-01-01

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

21 CFR 177.1440 - 4,4′-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10,000.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true 4,4â²-Isopropylidenediphenol-epichlorohydrin resins minimum molecular weight 10,000. 177.1440 Section 177.1440 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) INDIRECT FOOD...

Naphyrone: a "legal high" not legal any more.

PubMed

Vardakou, Ioanna; Pistos, Constantinos; Dona, Artemis; Spiliopoulou, Chara; Athanaselis, Sotiris

2012-10-01

Naphyrone, also known as naphthylpyrovalerone and O-2482, is a cathinone derivative that has been recently advertized for purchase on a number of websites. Naphyrone belongs to a new class of "designer drugs" that has emerged on the drugs abuse market and has gained popularity as the new "legal high." Legal highs have been circulating for a number of years in Europe and are becoming popular in the United States. They are affordable, widely available, legal to use and possess, and legal to supply. This review presents any available information about safety profile, clinical data, analytical profile, and legislation of this legal high, which is not legal any more. Any available information has been collected by various literature search engines and the World Wide Web. The structure of naphyrone is similar to that of pyrovalerone, a monoamine uptake inhibitor. This new designer drug does not have a long history of use, so there is little evidence of its long-term effects or on the risks from its use. Because of its similarity to other cathinone derivatives, naphyrone is likely to share the same risks, such as anxiety, paranoia, and overstimulation of the heart and circulatory system. Naphyrone was classified as a controlled drug under the UK Misuse of Drugs Act of 1971 (Amendment No. 2) Regulation 2010.

A new organic superconductor, beta-(BDA-TTP)2GaCl4 [BDA-TTP = 2,5-(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene].

PubMed

Yamada, Jun-ichi; Toita, Takashi; Akutsu, Hiroki; Nakatsuji, Shin'ichi; Nishikawa, Hiroyuki; Ikemoto, Isao; Kikuchi, Koichi; Choi, Eun S; Graf, David; Brooks, James S

2003-09-07

The preparation, crystal structure and physical properties of beta-(BDA-TTP)2GaCl4 has been investigated; the salt exhibits superconductivity at 3.1 K (onset) under a hydrostatic pressure of 7.6 kbar.

Re-evaluation of the origin and evolution of > 4.2 Ga zircons from the Jack Hills metasedimentary rocks

NASA Astrophysics Data System (ADS)

Nemchin, A. A.; Pidgeon, R. T.; Whitehouse, M. J.

2006-04-01

New data are presented on internal structures, U-Pb systematics and oxygen isotope compositions of eight detrital zircons with ages greater than 4.2 Ga, from the Jack Hills metasedimentary belt, Australia. Cathodoluminescence imaging, ion-microprobe U-Pb and oxygen isotope results show evidence for an extensive period of complex zircon growth, secondary reaction and U-Pb isotopic disturbance from 4.36 to 3.90 Ga. In addition many of the zircons have discordant U-Pb systems and excess common Pb indicating a superimposed, relatively recent, reaction between radiation damaged zircon and low temperature fluids. The significance of oxygen isotope compositions for zircons with complex internal structures and U-Pb systems is complicated by uncertainty in the origin of the grains and the unknown effect of later reactions. However, a minority of grains with sharp oscillatory zoning, uniform and concordant U-Pb systems, igneous Th-U ratios and low common Pb contents, are interpreted as undisturbed primary magmatic zircons. The oldest identified, oscillatory zoned, magmatic grain, with an age 4363 ± 20 Ma, is one of a few reported magmatic grains with this age, which is interpreted as the oldest reliable age for Hadean magmatic zircons. Mantle δ18O values are reported for these zircons. Younger oscillatory zoned zircon, including oscillatory zoned cores in complex grains, have δ18O values lower than 6.5‰, which are within the range of ion microprobe analysed δ18O values for zircons in high temperature equilibrium with the normal mantle rocks of 5.3 ± 0.6‰ (2 standard deviations). These values are also within the range of δ18O values found in lunar zircons. The absence of heavy oxygen in the grains that can be interpreted as primary magmatic zircons and the complex history over the period from 4.36 to 3.9 Ga, seen in all other Jack Hills zircons and reflected in the internal structures and U-Pb isotopic systems, questions the model for the early Earth involving long

Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pierściński, K., E-mail: kamil.pierscinski@ite.waw.pl; Pierścińska, D.; Pluska, M.

2015-10-07

Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The single mode emission is centered at 1059.4 cm{sup −1} (9.44 μm). A side mode suppression ratio of 43 dB was achieved. The laser exhibits a peak output power of 15 mW per facet at room temperature. The stable, single mode emission is observed within temperature tuning range, exhibiting shift at rate of 0.59 nm/K.

Weight neutrality with the DPP-4 inhibitor, vildagliptin: Mechanistic basis and clinical experience

PubMed Central

Foley, James E; Jordan, Jens

2010-01-01

Various factors may confound how diabetes medications affect a patient’s weight. Agents that induce hypoglycemia may promote weight gain through “defensive eating”. Conversely, patients whose hyperglycemia exceeds the renal glucose threshold may overeat to compensate for calories lost in urine and so gain weight when drug therapy ablates glycosuria. Some drugs, such as thiazolidinediones, may promote weight gain via increased lipid storage. Glucagon-like peptide-1 receptor agonists increase satiety, delay gastric emptying, and generally produce weight loss. Dipeptidyl peptidase (DPP)-4 inhibitors are generally weight-neutral, although modest weight loss has been observed with the DPP-4 inhibitor, vildagliptin, in patients with relatively low baseline glycemia. The weight neutrality of vildagliptin likely results in part from its intrinsically low risk for hypoglycemia. Recent studies point to additional potential mechanisms. One study found that drug-naïve patients randomized to vildagliptin exhibited significantly lower chylomicron lipid and apolipoprotein levels than placebo patients, suggesting that vildagliptin may inhibit intestinal fat extraction. Another trial found that patients randomized to vildagliptin versus placebo experienced paradoxical postprandial increases in markers of fatty acid mobilization and oxidation, in conjunction with increased sympathetic stimulation. Elaboration of these and other pathways could further clarify the origins of the favorable weight profile of vildagriptin. PMID:20730070

Ar-39 - Ar-40 Evidence for an Approximately 4.26 Ga Impact Heating Event on the LL Parent Body

NASA Technical Reports Server (NTRS)

Dixon, E. T.; Bogard, D. D.; Rubin, A. E.

2003-01-01

Miller Range 99301 is a type 6, unbrecciated LL chondrite. MIL 99301 is of interest because some compositional and petrographic features suggest it experienced rather high shock grades, whereas other features suggest it is relatively unshocked. Inconsistent shock indicators could be explained if MIL 99301 was shocked but then partly annealed by heat produced by impacts on the parent body. The hypothesis that MIL 99301 experienced high temperature metamorphism (type 6) followed by a later shock event that heated, but did not melt, the constituent feldspar can be evaluated using (39)Ar-(40)Ar chronology. This is because (39)Ar-(40)Ar ages of shocked ordinary chondrites are generally <4.2 Ga, whereas (39)Ar-(40)Ar ages of unshocked meteorites are generally older, and between 4.52 - 4.38 Ga.

‘Legal high’ associated Wallenberg syndrome

PubMed Central

Arora, Alok; Kumar, Anil; Raza, Muhammad Naeem

2013-01-01

‘Legal highs’ are substances of synthetic or natural origin having psychotropic properties. ‘Legal highs’ are often new and, in many cases, the actual chemical ingredients in a branded product can be changed without notifications and the risks are unpredictable. Acute recreational drug toxicity is a common reason for presentation to both hospital and prehospital medical services. It appears that, generally, the pattern of toxicity associated with ‘legal highs’ is broadly similar to that seen with classical stimulant recreational drugs such as cocaine, MDMA (3,4 methylenedioxy-N-methyl amphetamine) and amphetamine. Lack of clear literature pertaining to their chemical properties, pharmacology and toxicology makes an evaluation of their effects difficult. We describe a unique case in which consumption of such a substance led to hospital admission and a diagnosis of ‘lateral medullary stroke’ or ‘Wallenberg syndrome’. We believe that this is the first described case of a ‘legal high’ intake linked to a posterior circulation stroke. PMID:23709150

Photoluminescence and thermoluminescence properties of BaGa2O4

NASA Astrophysics Data System (ADS)

Noto, L. L.; Poelman, D.; Orante-Barrón, V. R.; Swart, H. C.; Mathevula, L. E.; Nyenge, R.; Chithambo, M.; Mothudi, B. M.; Dhlamini, M. S.

2018-04-01

Rare-Earth free luminescent materials are fast becoming important as the cost of rare earth ions gradually increases. In this work, a Rare-Earth free BaGa2O4 luminescent compound was prepared by solid state chemical reaction, which was confirmed to have a single phase by X-ray Diffraction. The Backscattered Electron image and Energy Dispersive X-ray spectroscopy maps confirmed irregular particle and homogeneous compound formation, respectively. The Photoluminescence spectrum displayed broad emission between 350 to 650 nm, which was deconvoluted into two components. The photoluminescence excitation peak was positioned at 254 nm, which corresponds with the band-to-band position observed from the diffuse reflectance spectrum. The band gap was extrapolated to 4.65 ± 0.02 eV using the Kubelka-Munk model. The preliminary thermoluminescence results indicated that the kinetics involved were neither of first nor second order. Additionally, the activation energy of the electrons within the trap centres was approximated to 0.61 ± 0.01 eV using the Initial Rise model.

Decagonal quasicrystal and related crystalline phases in Mn-Ga alloys with 52 to 63 a/o Ga

NASA Astrophysics Data System (ADS)

Wu, J. S.; Kuo, K. H.

1997-03-01

A decagonal quasicrystal (DQC) and six related intermetallic phases with large unit cells have been found in binary Mn-Ga alloys with 52 to 63 at. pct Ga by means of transmission electron microscopy (TEM). As does the Al-Mn DQC, the Ga-Mn DQC also has a periodicity of 1.25 nm along its tenfold axis. However, its Mn content, determined by electron microprobe X-ray analysis (about 45 to 50 at. pct Mn), is much higher than that of the Al-Mn DQC (about 20 to 30 at. pct Mn). The compositions of the intermetallic phases are about 53, 56, 58, and 62 at. pct Ga, corresponding respectively to the unknown structures of MnGa (50.7 to 53.4 at. pct Ga), Mn5Ga6 (55 at pct Ga), Mn5Ga7 (57.9 at. pct Ga), and Mn3Ga5 (62.9 at. pct Ga) given in the binary Mn-Ga phase diagram ( Metals Hand-book, T.B. Massalski, J.L. Murray, L.H. Benneft, and H. Baker, eds., ASM, Metals Park, OH, 1986, vol. 2, p. 1144). Their lattice types have been determined by selected area electron diffraction. The ferromagnetic Mn3Ga5 is tetragonal, a=1.25 nm and c=2.50 nm; Mn5Ga7 is orthorhombic, a=4.57 nm, b=1.25 nm, and c=1.44 nm; Mn5Ga6 has two different but closely related orthorhombic unit cells, a=1.26 nm, b=1.25 nm, and c=1.48 nm as well as a=0.77 nm, b=1.25 nm, and c=2.36 nm; MnGa also has two different and related unit cells, one orthorhombic with a=2.04 nm, b=1.25 nm, and c=1.48 nm and the other monoclinic with a=2.59 nm, b=1.25 nm, c=1.15 nm, and β≈=110 deg. All these orthorhombic phases have b=1.25 nm, being the same as the periodicity along the tenfold axis of the Ga-Mn and Al-Mn DQCs. Moreover, all these six intermetallic phases give electron diffraction patterns displaying a pseudo-tenfold distribution of strong diffraction spots and are considered to be crystalline approximants of the Ga-Mn DQC.

A Comparative 68Ga-Citrate and 68Ga-Chloride PET/CT Imaging of Staphylococcus aureus Osteomyelitis in the Rat Tibia

PubMed Central

Lankinen, Petteri; Noponen, Tommi; Autio, Anu; Luoto, Pauliina; Löyttyniemi, Eliisa; Hakanen, Antti J.

2018-01-01

There may be some differences in the in vivo behavior of 68Ga-chloride and 68Ga-citrate leading to different accumulation profiles. This study compared 68Ga-citrate and 68Ga-chloride PET/CT imaging under standardized experimental models. Methods. Diffuse Staphylococcus aureus tibial osteomyelitis and uncomplicated bone healing rat models were used (n = 32). Two weeks after surgery, PET/CT imaging was performed on consecutive days using 68Ga-citrate or 68Ga-chloride, and tissue accumulation was confirmed by ex vivo analysis. In addition, peripheral quantitative computed tomography and conventional radiography were performed. Osteomyelitis was verified by microbiological analysis and specimens were also processed for histomorphometry. Results. In PET/CT imaging, the SUVmax of 68Ga-chloride and 68Ga-citrate in the osteomyelitic tibias (3.6 ± 1.4 and 4.7 ± 1.5, resp.) were significantly higher (P = 0.0019 and P = 0.0020, resp.) than in the uncomplicated bone healing (2.7 ± 0.44 and 2.5 ± 0.49, resp.). In osteomyelitic tibias, the SUVmax of 68Ga-citrate was significantly higher than the uptake of 68Ga-chloride (P = 0.0017). In animals with uncomplicated bone healing, no difference in the SUVmax of 68Ga-chloride or 68Ga-citrate was seen in the operated tibias. Conclusions. This study further corroborates the use of 68Ga-citrate for PET imaging of osteomyelitis. PMID:29681785

Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

DTIC Science & Technology

2016-10-01

Challenges .............................................. 6 2.4. Gamma Ray Irradiation of AlInN/GaN & AlGaN/GaN HEMT Structures...8 2.4.1. Characterization of Irradiated AlInN/GaN and AlGaN/GaN HEMT Heterostructures .................... 8 2.4.2. APT of Baseline Un... Irradiated Lattice Matched AlInN/GaN HEMT Heterostructures ................... 9 2.4.3. APT of Gamma- Irradiated Lattice Matched AlInN/GaN HEMT

Atomic ordering in GaAsP

NASA Astrophysics Data System (ADS)

Chen, G. S.; Jaw, D. H.; Stringfellow, G. B.

1991-04-01

CuPt type ordering, which consists of a monolayer compositional modulation along one of the 4 <111> directions in the lattice, was studied using transmission electron microscopy for GaAs1-xPx with values of x extending from 0.25 to 0.85. The samples were grown by organometallic vapor phase epitaxy on nominal (001) GaAs substrates that were misoriented by varying amounts in three directions. No CuPt type ordering was observed for GaAs1-xPx with x ≤0.35, while ordering was found to occur for 0.4≤x≤0.85. The direction of substrate misorientation has a major effect on the determination of which of the four possible CuPt variants are formed for 0.4≤x≤0.85. Two variants, with ordering on the (1¯11) and (11¯1) planes, appear for epilayers grown on substrates oriented exactly on the (001) plane and for substrates misoriented by 6° towards the [110] direction. Only one variant, with ordering on the (1¯11) plane, appears for epilayers grown on substrates misoriented by 6° towards [1¯10]. These ordering-induced spots observed in transmission electron diffraction (TED) patterns for GaAsP occur only for the [110] cross section. From TED studies of GaInP grown on similar substrates, we conclude that the CuPt variants in GaAsP are exactly the same as for GaInP. Further evidence supporting this conclusion was obtained by growing first a layer of GaInP followed by a layer of GaAsP. High-resolution dark field electron micrographs show domains of the same variants in both layers. A mechanism describing the formation of the specific ordered variant for both GaAsP and GaInP is proposed. From studies of ordering in a strain-layer superlattice, the strain due to lattice mismatch was found to play no significant role in the propagation of ordered domains. Microtwins, also generated due to lattice mismatch, can act as domain boundaries and prevent the propagation of the ordered domains.

The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

2018-04-01

In this paper, the detailed device characteristics were investigated both before and after the Si3N4 passivation grown by plasma-enhanced chemical vapor deposition (PECVD). Better transport properties have been observed for the passivated devices compared with the same ones before passivation. The strain variation and the influence of the scattering mechanisms were analyzed and studied. The calculated results show that the non-uniform distribution of the additional polarization charges at the AlGaN/AlN/GaN interfaces has been weakened by the deposition of the Si3N4 layer. The numerical rise of the two-dimensional electron gas (2DEG) electron mobility and the decrease of the measured R on- A values were in a good consistency, and the weakening of the polarization Coulomb field (PCF) scattering after the passivation process is considered to be the main cause of these phenomena.

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Chang, Kuo-Hua; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Yang, Chih-Ciao; Kuo, Huan-Shao; Yang, J. H.; Lai, Wei-Chih

2010-07-01

Inverted Al0.25Ga0.75N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2×1012 Ω and 3.4×1013 cm Hz1/2 W-1, respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys