Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.

1995-01-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

A model for proton-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

1982-01-01

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

Investigation of high efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

1989-01-01

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

Periodic annealing of radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

1980-01-01

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

PubMed Central

2011-01-01

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

High-efficiency concentration/multi-solar-cell system for orbital power generation

NASA Technical Reports Server (NTRS)

Onffroy, J. R.; Stoltzmann, D. E.; Lin, R. J. H.; Knowles, G. R.

1980-01-01

An analysis was performed to determine the economic feasibility of a concentrating spectrophotovoltaic orbital electrical power generation system. In this system dichroic beam-splitting mirrors are used to divide the solar spectrum into several wavebands. Absorption of these wavebands by solar cells with matched energy bandgaps increases the cell efficiency while decreasing the amount of heat which must be rejected. The optical concentration is performed in two stages. The first concentration stage employs a Cassegrain-type telescope, resulting in a short system length. The output from this stage is directed to compound parabolic concentrators which comprise the second stage of concentration. Ideal efficiencies for one-, two-, three-, and four-cell systems were calculated under 1000 sun, AMO conditions, and optimum energy bands were determined. Realistic efficiencies were calculated for various combinations of Si, GaAs, Ge and GaP. Efficiencies of 32 to 33 percent were obtained with the multicell systems. The optimum system consists of an f/3.5 optical system, a beam splitter to divide the spectrum at 0.9 microns, and two solar cell arrays, GaAs and Si.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

NASA Technical Reports Server (NTRS)

Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

1981-01-01

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Space qualification of IR-reflecting coverslides for GaAs solar cells

NASA Technical Reports Server (NTRS)

Meulenberg, Andrew

1995-01-01

Improvements to GaAs solar array performance, from the use on solar cell coverslides of several reflecting coatings that reject unusable portions of the solar spectrum, are quantified. Blue-red-rejection (BRR) coverslides provide both infrared reflection (IRR) and ultraviolet rejection (UVR). BRR coverslides were compared to conventional antireflection (AR) and ultraviolet (UV) coated coverslides. A 2% improvement in peak-power output, relative to that from Ar-coated coverslides, is seen for cells utilizing BRR coverslides with the widest bandpass. Coverslide BRR-filter bandpass width and covered-solar-cell short-circuit current is a function of incident light angle and the observed narrower-bandpass filters are more sensitive to change in angle from the normal than are wide-bandpass filters. The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has indicated that all multilayer coatings on coverslides and solar cells will experience degradation from the space environment (UV and/or electrons). Five types of coverslide coatings, designed for GaAs solar cells, were tested as part of a NASA-sponsored space-flight qualification for BRR, multi-layer-coated, coverslides. The reponse to the different radiations varied with the coatings. The extent of degradation and its consequences on the solar cell electrical characteristics depend upon the coatings and the radiation. In some cases, an improved optical coupling was observed during long-term UV exposure to the optical stack. The benefits of multi-layered solar cell optics may depend upon both the duration and the radiation environment of a mission.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

PubMed

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Light funnel concentrator panel for solar power

NASA Technical Reports Server (NTRS)

1987-01-01

The solar concentrator design concept provides a theoretical concentration efficiency of 96 percent with power-to-weight ratios as high as 50 W/kg. Further, it eliminates the need for fragile reflective coatings and is very tolerant to pointing inaccuracies. The concept differs from conventional reflective mirrors and lens design in that is uses the principle of total internal reflection in order to funnel incident sunlight into a concentrator photovoltaic cell. The feasibility of the light funnel concentrator concept was determined through a balanced approach of analysis, development, and fabrication of prototypes, and testing of components. A three-dimensional optical model of the light funnel concentrator and photovoltaic cell was developed in order to assess the ultimate performance of such systems. In addition, a thermal and structural analysis of a typical unit was made. Techniques of fabricating the light funnel cones, optically coupling them to GaAs concentrator cells, bonding the funnels to GaAs cells, making electrical interconnects, and bonding substrates was explored and a prototype light funnel concentrator unit was fabricated and tested. Testing of the system included measurements of optical concentrating efficiency, optical concentrator to cell coupling efficiency, and electrical efficiency.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Basic mechanisms study for MIS solar cell structures on GaAs

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1978-01-01

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Burst annealing of high temperature GaAs solar cells

NASA Technical Reports Server (NTRS)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Long-term temperature effects on GaAs solar cells

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Hong, K. H.

1979-01-01

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C.

1980-01-01

With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

PubMed

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

1982-01-01

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

NASA Technical Reports Server (NTRS)

Leon, Rosa P.; Piszczor, Michael F., Jr.

1985-01-01

The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

PubMed

Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

2017-10-02

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavalli, Alessandro; Johnston, Steven; Sulas, Dana

Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on themore » spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Conceptual design study of concentrator enhanced solar arrays for space applications. Performance evaluation of 5 KW and 20 KW systems in Si and GaAs at 1 AU employing a flat plate trough concentrator

NASA Technical Reports Server (NTRS)

1980-01-01

A simple, efficient and very lightweight preliminary design for a 5 KW and 20 KW BOL output concentrated array evolved and is described by drawings. The relative effectiveness of this design, as compared to an unconcentrated planar array of equal power output, was measured by comparing power to mass performance of and the solar cell area required by each. Improvements in power to mass performance as high as 42% together with array area size reduction of 57% are possible in GaAs systems. By contrast, when the same concentrator design is applied to silicon systems, no improvement in power to mass can be obtained although array area reductions as high as 35% are obtainable.

Gallium arsenide (GaAs) solar cell modeling studies

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.

1980-01-01

Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

Paths to light trapping in thin film GaAs solar cells.

PubMed

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

NASA Astrophysics Data System (ADS)

Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

2005-07-01

Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Janousek, B. K.; Francis, R. W.; Wendt, J. P.

1985-01-01

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Buffer layer between a planar optical concentrator and a solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solano, Manuel E.; Barber, Greg D.; Department of Chemistry, Pennsylvania State University, University Park, PA 16802

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structuremore » increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.« less

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Third Working Meeting on Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Walker, G. H. (Compiler)

1976-01-01

Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.

Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

NASA Astrophysics Data System (ADS)

Salii, R. A.; Mintairov, S. A.; Nadtochiy, A. M.; Payusov, A. S.; Brunkov, P. N.; Shvarts, M. Z.; Kalyuzhnyy, N. A.

2016-11-01

Development of Metalorganic Vapor Phase Epitaxy (MOVPE) technology of InAs quantum dots (QDs) in GaAs for photovoltaic applications is presented. The growth peculiarities in InAs-GaAs lattice-mismatched system were considered. The photoluminescence (PL) intensity dependences on different growth parameters were obtained. The multimodal distribution of QDs by sizes was found using AFM and PL methods. GaAs solar cell nanoheterostructures with imbedded QD arrays were designed and obtained. Ones have been demonstrated a significant increase of quantum efficiency and photogenerated current of QD solar cells due to photo effect in InAs QD array (0.59 mA/cm2 for AM1.5D and 82 mA/cm2 for AM0).

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Optoelectronic simulation of GaAs solar cells with angularly selective filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert

We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100 nm GaAs cell, including Auger recombination.

Technology requirements for GaAs photovoltaic arrays

NASA Technical Reports Server (NTRS)

Scott-Monck, J.; Rockey, D.

1981-01-01

An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

A simple model of proton damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.

1982-01-01

A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.

Use of Displacement Damage Dose in an Engineering Model of GaAs Solar Cell Radiation Damage

NASA Technical Reports Server (NTRS)

Morton, T. L.; Chock, R.; Long, K. J.; Bailey, S.; Messenger, S. R.; Walters, R. J.; Summers, G. P.

2005-01-01

Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Radiation Handbook (JPL 96-9). An alternative, the displacement damage dose (D(sub d)) method, has been developed by Summers, et al. This method is currently being implemented in the SAVANT computer program.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

2017-12-01

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE PAGES

Perl, E. E.; Kuciauskas, D.; Simon, J.; ...

2017-12-21

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, E. E.; Kuciauskas, D.; Simon, J.

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

1982-01-01

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Weiquan; Becker, Jacob; Liu, Shi

2014-05-28

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

Langley program of GaAs solar cells. [emphasizing energy conversion efficiency and radiation resistance

NASA Technical Reports Server (NTRS)

Conway, E. J.

1979-01-01

A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Simon, John; Schulte, Kevin L.; Jain, Nikhil; ...

2016-10-19

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued improvement of the performance of HVPE-grown single-junction GaAs solar cells. We show over an order of magnitude improvement in the interface recombination velocity between GaAs and GaInP layers through the elimination of growth interrupts, leading to increased short-circuit current density and open-circuit voltage compared with cells with interrupts. One-sun conversion efficiencies as high as 20.6% were achieved with this improved growth process. Solar cells grown in an inverted configuration that were removed frommore » the substrate showed nearly identical performance to on-wafer cells, demonstrating the viability of HVPE to be used together with conventional wafer reuse techniques for further cost reduction. As a result, these devices utilized multiple heterointerfaces, showing the potential of HVPE for the growth of complex and high-quality III-V devices.« less

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

NASA Technical Reports Server (NTRS)

Vonross, O.

1980-01-01

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

NASA Technical Reports Server (NTRS)

Wilt, David M.; Clark, Eric B.; Ringel, Steven A.; Andre, Carrie L.; Smith, Mark A.; Scheiman, David A.; Jenkins, Phillip P.; Maurer, William F.; Fitzgerald, Eugene A.; Walters, R. J.

2004-01-01

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic

DOE PAGES

Kornblum, L.; Fenning, D. P.; Faucher, J.; ...

2016-12-22

We demonstrate an oxide-stabilized III–V photoelectrode architecture for solar fuel production from water in neutral pH. For this tunable architecture we demonstrate 100% Faradaic efficiency for hydrogen evolution, and incident photon-to-current efficiencies (IPCE) exceeding 50%. High IPCE for hydrogen evolution is a consequence of the low-loss interface achieved via epitaxial growth of a thin oxide on a GaAs solar cell. Developing optimal energetic alignment across the interfaces of the photoelectrode using well-established III–V technology is key to obtaining high performance. This advance constitutes a critical milestone towards efficient, unassisted fuel production from solar energy.

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Mechanical design of a low concentration ratio solar array for a space station application

NASA Technical Reports Server (NTRS)

Biss, M. S.; Hsu, L.

1983-01-01

This paper describes a preliminary study and conceptual design of a low concentration ratio solar array for a space station application with approximately a 100 kW power requirement. The baseline design calls for a multiple series of inverted, truncated, pyramidal optical elements with a geometric concentration ratio (GCR) of 6. It also calls for low life cycle cost, simple on-orbit maintainability, 1984 technology readiness date, and gallium arsenide (GaAs) of silicon (Si) solar cell interchangeability. Due to the large area needed to produce the amount of power required for the baseline space station, a symmetrical wing design, making maximum use of the commonality of parts approach, was taken. This paper will describe the mechanical and structural design of a mass-producible solar array that is very easy to tailor to the needs of the individual user requirement.

GaAs homojunction solar cell development

NASA Technical Reports Server (NTRS)

Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

1980-01-01

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Mitchel, William; Haas, T. W.; Yen, Ming-Yuan

1989-07-01

Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz-Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3-micron thick, a photoreflectance signal at the band edge contains a substrate-epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.

Solar satellites

NASA Astrophysics Data System (ADS)

Poher, C.

A reference system design, projected costs, and the functional concepts of a satellite solar power system (SSPS) for converting sunlight falling on solar panels of a satellite in GEO to a multi-GW beam which could be received by a rectenna on earth are outlined. Electricity transmission by microwaves has been demonstrated, and a reference design system for supplying 5 GW dc to earth was devised. The system will use either monocrystalline Si or concentrator GaAs solar cells for energy collection in GEO. Development is still needed to improve the lifespan of the cells. Currently, the cell performance degrades 50 percent in efficiency after 7-8 yr in space. Each SSPS satellite would weigh either 34,000 tons (Si) or 51,000 tons (GaAs), thereby requiring the fabrication of a heavy lift launch vehicle or a single-stage-to-orbit transport in order to minimize launch costs. Costs for the solar panels have been estimated at $500/kW using the GaAs technology, with transport costs for materials to GEO being $40/kg.

Determination of carrier concentration and compensation microprofiles in GaAs

NASA Technical Reports Server (NTRS)

Jastrzebski, L.; Lagowski, J.; Walukiewicz, W.; Gatos, H. C.

1980-01-01

Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

TAB interconnects for space concentrator solar cell arrays

NASA Technical Reports Server (NTRS)

Avery, J.; Bauman, J. S.; Gallagher, P.; Yerkes, J. W.

1993-01-01

The Boeing Company has evaluated the use of Tape Automated Bonding (TAB) and Surface Mount Technology (SMT) for a highly reliable, low cost interconnect for concentrator solar cell arrays. TAB and SMT are currently used in the electronics industry for chip interconnects and printed circuit board assembly. TAB tape consists of sixty-four 3-mil/1-oz tin-plated copper leads on 8-mil centers. The leads are thermocompression gang bonded to GaAs concentrator solar cell with silver contacts. This bond, known as an Inner Lead Bond (ILB), allows for pretesting and sorting capability via nondestruct wire bond pull and flash testing. Destructive wire pull tests resulted in preferred mid-span failures. Improvements in fill factor were attributed to decreased contact resistance on TAB bonded cells. Preliminary thermal cycling and aging tests were shown excellent bond strength and metallurgical results. Auger scans of bond sites reveals an Ag-Cu-Tin composition. Improper bonds are identified through flash testing as a performance degradation. On going testing of cells are underway at Lewis Research Center. SMT techniques are utilized to excise and form TAB leads post ILB. The formed leads' shape isolates thermal mismatches between the cells and the flex circuit they are mounted on. TABed cells are picked and placed with a gantry x-y-z positioning system with pattern recognition. Adhesives are selected to avoid thermal expansion mismatch and promote thermal transfer to the flex circuit. TAB outer lead bonds are parallel gap welded (PGW) to the flex circuit to finish the concentrator solar cell subassembly.

Concentrating Solar Power Projects - Khi Solar One | Concentrating Solar

Science.gov Websites

Power | NREL Khi Solar One This page provides information on Khi Solar One, a concentrating . Status Date: February 8, 2016 Project Overview Project Name: Khi Solar One Country: South Africa Location

Technology of GaAs metal-oxide-semiconductor solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1977-01-01

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Concentrating Solar Power Projects - Godawari Solar Project | Concentrating

Science.gov Websites

Solar Power | NREL Godawari Solar Project This page provides information on Godawari Solar Project, a concentrating solar power (CSP) project, with data organized by background, participants, and power plant configuration. Status Date: February 13, 2014 Project Overview Project Name: Godawari Solar

Concentrating Solar Power Projects - KaXu Solar One | Concentrating Solar

Science.gov Websites

Power | NREL KaXu Solar One This page provides information on KaXu Solar One, a concentrating . Status Date: April 14, 2015 Project Overview Project Name: KaXu Solar One Country: South Africa Location

Optimization of wave-guided luminescence for higher efficiency of bifacial thin-film microscale GaAs solar cells

NASA Astrophysics Data System (ADS)

Shen, Ling; Shen, Yifeng; Li, Feng

2018-01-01

In pursuit of capturing more wave-guided luminescence for surface-printed bifacial GaAs μ-cells, the pyramid structure has been incorporated with specular back side reflector (BSR) to change the direction of photon propagation. Based on ray tracing model, the calculated photon capturing efficiency of GaAs μ-cells from back side via pyramid, dependent on the parameters of pyramid structure, achieve the largest 1.7× increase for dye absorption peak of 480 nm compared to the case without pyramid. More significantly, the short circuit current in experiment has been improved from original 16.5 mA/cm2 to 23.75 mA/cm2 for the AM 1.5G solar spectrum. Further experiment demonstrates that the optimized pyramid structure enables the integrated luminescent intensity to reach ∼3× increase in a smaller distance of optical transport, which means the advantages in photon capturing efficiency for cells with higher aspect ratio. The calculation further confirms that the cells with higher aspect ratio, among all cells with the same area, realize the higher concentration ratio for the same geometric gain. This provides a guideline for design of cell geometries to guarantee a higher power output in terms of cell modules.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% ofmore » efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.« less

Gallium arsenide (GaAs) power conversion concept

NASA Technical Reports Server (NTRS)

Nussberger, A. A.

1980-01-01

A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

PubMed Central

Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

2017-01-01

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Photovoltaic solar concentrator

DOEpatents

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

2016-03-15

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

Photovoltaic solar concentrator

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Resnick, Paul J.; Cruz-Campa, Jose Luis

2012-12-11

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

Radiation testing of GaAs on CRRES and LIPS experiment

NASA Technical Reports Server (NTRS)

Trumble, T. M.; Masloski, K.

1984-01-01

The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

NASA Technical Reports Server (NTRS)

Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

2005-01-01

In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

High-efficiency GaAs solar concentrator cells for space and terrestrial applications

NASA Technical Reports Server (NTRS)

Hamaker, H. C.; Werthen, J. G.; Ford, C. W.; Virshup, G. F.; Kaminar, N. R.

1986-01-01

High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.

Effects of low energy proton, electron, and simultaneously combined proton and electron environments in silicon and GaAs solar cells

NASA Technical Reports Server (NTRS)

Horne, W. E.; Day, A. C.; Russell, D. A.

1980-01-01

Degradation of silicon and GaAs solar cells due to exposures to low energy proton and electron environments and annealing data for these cells are discussed. Degradation of silicon cells in simultaneously combined electron and low energy proton environments and previous experimental work is summarized and evaluated. The deficiencies in current solar array damage prediction techniques indicated by these data and the relevance of these deficiencies to specific missions such as intermediate altitude orbits and orbital transfer vehicles using solar electric propulsion systems are considered.

GaAs core--shell nanowires for photovoltaic applications.

PubMed

Czaban, Josef A; Thompson, David A; LaPierre, Ray R

2009-01-01

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Study of multi-kW solar arrays for Earth orbit application

NASA Technical Reports Server (NTRS)

1980-01-01

Planar and concentrator solar array configurations based on silicon and gallium arsenide solar cells were conceptualized and on-orbit maintainability was addressed. Four basic categories emerged: (1) planar (non concentrated) with silicon cells, (2) low-CR (concentration ratio = 3.4) with silicon cells, (3) low-CR with GaAs, and (4) high-CR (concentration ratio = 62.5) with GaAs. A very high-CR (concentration ratio = 200) was investigated but rejected on thermal grounds. Nonrecurring and recurring cost elements for each of the four concepts selected were compared over a 15 year life cycle. Under conditions where the gallium arsenide cells can be produced for less than $25 per 2 x 2 cm, the low CR concentrator emerges as the most cost effective configuration. However, the producibility risk remains higher on the gallium arsenide cell.

Homojunction GaAs solar cells grown by close space vapor transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.

2014-06-08

We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping,more » and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.« less

Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

1984-01-01

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

Concentrating Solar Power Projects - Jemalong Solar Thermal Station |

Science.gov Websites

Concentrating Solar Power | NREL Jemalong Solar Thermal Station This page provides information on Jemalong Solar Thermal Station, a concentrating solar power (CSP) project, with data organized by Project Name: Jemalong Solar Thermal Station Country: Australia Location: Jemalong (New South Wales) Owner

Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

PubMed

Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

2016-12-01

Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

Characterisation of semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

1982-01-01

Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performance

NASA Technical Reports Server (NTRS)

Bhat, I.; Bhat, K. N.; Mathur, G.; Borrego, J. M.; Ghandhi, S. K.

1984-01-01

This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.

Reliability Improvement in III-V Concentrator Solar Cells by Means of Perimeter Protection

NASA Astrophysics Data System (ADS)

González, José R.; Vázquez, Manuel; Núñez, Neftalí; Algora, Carlos; Espinet, Pilar

2010-10-01

This paper presents the evolution in the strategy to assess the reliability of III-V solar cells and a new thermal ageing test carried out over GaAs single junction solar cells at three different temperatures (130, 150 and 170° C). The perimeter of the solar cells has been protected with silicone, which seems to be an effective way of enhancing the reliability of the solar cells. A preliminary analysis of the results indicates a mean time to failure (MTTF) one order of magnitude larger than the one obtained in a previous thermal test with the perimeter uncoated.

Concentrating Solar Power Projects - Genesis Solar Energy Project |

Science.gov Websites

Concentrating Solar Power | NREL Genesis Solar Energy Project This page provides information on the Genesis Solar Energy Project, a concentrating solar power (CSP) project, with data organized by background, participants, and power plant configuration. The Project includes two 125-MW units incorporating

Concentrating Solar Power Projects in Thailand | Concentrating Solar Power

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Thai Solar | NREL Thailand Concentrating solar power (CSP) projects in Thailand are listed belowâ€"

Properties of solar generators with reflectors and radiators

NASA Astrophysics Data System (ADS)

Ebeling, W. D.; Rex, D.; Bierfischer, U.

1980-06-01

Radiation cooled concentrator systems using silicon and GaAs cells were studied. The principle of radiation cooling by the reflector surfaces is discussed for cylindrical parabolic reflectors (SARA), truncated hexagonal pyramids, and a small trough configuration. Beam paths, collection properties for imperfect orientation, and thermal optimization parameters were analyzed. The three concentrating systems with radiation cooling offer advantages over the plane panel and over the large trough. With silicon solar cells they exhibit considerably lower solar cell consumption per Kw and also lower mass per kW. With GaAs cells the SARA system reduces the number of solar cells needed per kW to less than 10%. Also in all other cases SARA offers the best values for alpha and F sub sol, as long as narrow angular tolerances of the panel orientation can be met. Analysis of the energy collecting properties for imperfect orientation shows the superiority of the hexagonal concentrator. This device can produce power for even large angles between the sun and the panel normal.

Concentrating Solar Power Projects in France | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. eLLO Solar NREL France Concentrating solar power (CSP) projects in France are listed belowâ€"

Concentrating Solar Power Projects in Germany | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Jülich Solar NREL Germany Concentrating solar power (CSP) projects in Germany are listed belowâ€"

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

DOE PAGES

Kang, Dongseok; Young, James L.; Lim, Haneol; ...

2017-03-27

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here in this paper we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfacesmore » for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.« less

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Young, James L.; Lim, Haneol; Klein, Walter E.; Chen, Huandong; Xi, Yuzhou; Gai, Boju; Deutsch, Todd G.; Yoon, Jongseung

2017-03-01

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfaces for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.

Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

PubMed Central

Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

2015-01-01

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

Concentrating Solar Power Projects - eCare Solar Thermal Project |

Science.gov Websites

Concentrating Solar Power | NREL eCare Solar Thermal Project This page provides information on eCare Solar Thermal Project, a concentrating solar power (CSP) project, with data organized by Project Name: eCare Solar Thermal Project Country: Morocco Location: Undefined Owner(s): CNIM (100

Conceptual design study of concentrator enhanced solar arrays for space applications. 2kW Si and GaAs systems at 1 AU

NASA Technical Reports Server (NTRS)

1980-01-01

The effect of concentration level on the specific power for a deployable, thin, gallium arsenide cell array in geosynchronous orbit for 10 years in conjunction with a two dimensional flat plate trough concentrator (V trough) and also with a multiple flat plate concentrator was investigated as well as the effects for a conventional silicon cell array on a rigid substrate. For application to a thin GaAs array at 1 AU for 10 years, the V trough produces a 19% benefit in specific power and a dramatic reduction in array area, while the multiple flat plate collector design is not only of no benefit, but is a considerable detriment. The benefit it achieves by reducing array area is duplicated by the 2D design. For the silicon array on a rigid substrate, improvement in performance due to a concentrator with ordinary mirror coating is quite small: 9% increase in specific power, and 13% reduction in array area. When the concentrator mirrors are coated with an improved cold mirror coating, somewhat more significant results are obtained: 31% specific power improvement; and 27% area reduction. In both cases, a 10 year exposure reduces BOL output by 23%.

Concentrating Solar Power Projects - La Florida | Concentrating Solar Power

Science.gov Websites

| NREL Florida This page provides information on La Florida, a concentrating solar power (CSP : March 20, 2017 Project Overview Project Name: La Florida Country: Spain Location: Badajoz (Badajoz Solar Resource: La Florida Weather Station Electricity Generation: 175,000 MWh/yr (Estimated) Contact(s

Solar concentrator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melchior, B.

1984-04-03

A solar concentrator comprises a solid block of a transparent material having a planar incident surface positioned to receive solar rays and, opposite this surface, a curved reflective surface so that the material of the block completely fills the space between these surfaces. At the incident surface an absorber is provided and the curvature of the reflective surface is such that it is at least partly parabolical and adapted to reflect solar rays traversing the body through the body again to the absorber.

Concentrating Solar Power Projects - eLLO Solar Thermal Project |

Science.gov Websites

Concentrating Solar Power | NREL eLLO Solar Thermal Project This page provides information on Llo Solar Thermal Project, a concentrating solar power (CSP) project, with data organized by Name: eLLO Solar Thermal Project (Llo) Country: France Location: Llo (Pyrénées Orientales) Owner(s

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Concentrating Solar Power Projects by Country | Concentrating Solar Power |

Science.gov Websites

NREL Country In this section, you can select a country from the map or the following list of countries. You can then select a specific concentrating solar power (CSP) project and review a profile covering project basics, participating organizations, and power plant configuration data for the solar

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Electro-optical characterization of GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Daling, Dave

1987-01-01

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Doping assessment in GaAs nanowires.

PubMed

Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

2018-06-08

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Doping assessment in GaAs nanowires

NASA Astrophysics Data System (ADS)

Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

2018-06-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Development of advanced Si and GaAs solar cells for interplanetary missions

NASA Technical Reports Server (NTRS)

Strobl, G.; Uegele, P.; Kern, R.; Roy, K.; Flores, C.; Campesato, R.; Signorini, C.; Bogus, K.

1995-01-01

describes how the technical achievements have been possible with Si and GaAs LILT solar cells (including a comparison between measured and modelled l-V characteristics) and it presents the technology verification tests results.

Development of advanced Si and GaAs solar cells for interplanetary missions

NASA Astrophysics Data System (ADS)

Strobl, G.; Uegele, P.; Kern, R.; Roy, K.; Flores, C.; Campesato, R.; Signorini, C.; Bogus, K.

1995-10-01

describes how the technical achievements have been possible with Si and GaAs LILT solar cells (including a comparison between measured and modelled l-V characteristics) and it presents the technology verification tests results.

Fresnel Concentrators for Space Solar Power and Solar Thermal Propulsion

NASA Technical Reports Server (NTRS)

Bradford, Rodney; Parks, Robert W.; Craig, Harry B. (Technical Monitor)

2001-01-01

Large deployable Fresnel concentrators are applicable to solar thermal propulsion and multiple space solar power generation concepts. These concentrators can be used with thermophotovoltaic, solar thermionic, and solar dynamic conversion systems. Thin polyimide Fresnel lenses and reflectors can provide tailored flux distribution and concentration ratios matched to receiver requirements. Thin, preformed polyimide film structure components assembled into support structures for Fresnel concentrators provide the capability to produce large inflation-deployed concentrator assemblies. The polyimide film is resistant to the space environment and allows large lightweight assemblies to be fabricated that can be compactly stowed for launch. This work addressed design and fabrication of lightweight polyimide film Fresnel concentrators, alternate materials evaluation, and data management functions for space solar power concepts, architectures, and supporting technology development.

Concentrated solar power generation using solar receivers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Bruce N.; Treece, William Dean; Brown, Dan

Inventive concentrated solar power systems using solar receivers, and related devices and methods, are generally described. Low pressure solar receivers are provided that function to convert solar radiation energy to thermal energy of a working fluid, e.g., a working fluid of a power generation or thermal storage system. In some embodiments, low pressure solar receivers are provided herein that are useful in conjunction with gas turbine based power generation systems.

Energy 101: Concentrating Solar Power

ScienceCinema

None

2018-02-07

From towers to dishes to linear mirrors to troughs, concentrating solar power (CSP) technologies reflect and collect solar heat to generate electricity. A single CSP plant can generate enough power for about 90,000 homes. This video explains what CSP is, how it works, and how systems like parabolic troughs produce renewable power. For more information on the Office of Energy Efficiency and Renewable Energy's CSP research, see the Solar Energy Technology Program's Concentrating Solar Power Web page at http://www1.eere.energy.gov/solar/csp_program.html.

Multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution as a mechanism to generate intermediate band energy levels

NASA Astrophysics Data System (ADS)

Rodríguez-Magdaleno, K. A.; Pérez-Álvarez, R.; Martínez-Orozco, J. C.; Pernas-Salomón, R.

2017-04-01

In this work the generation of an intermediate band of energy levels from multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution is reported. Within the effective mass approximation the electronic structure of a GaAs spherical quantum-dot surrounded by one, two and three shells is studied in detail using a numerically stable transfer matrix method. We found that a shells-size distribution characterized by continuously wider GaAs domains is a suitable mechanism to generate the intermediate band whose width is also dependent on the Aluminium concentration x. Our results suggest that this effective mechanism can be used for the design of wider intermediate band than reported in other quantum systems with possible solar cells enhanced performance.

Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

NASA Astrophysics Data System (ADS)

Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

2018-02-01

Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

Pushing concentration of stationary solar concentrators to the limit.

PubMed

Winston, Roland; Zhang, Weiya

2010-04-26

We give the theoretical limit of concentration allowed by nonimaging optics for stationary solar concentrators after reviewing sun- earth geometry in direction cosine space. We then discuss the design principles that we follow to approach the maximum concentration along with examples including a hollow CPC trough, a dielectric CPC trough, and a 3D dielectric stationary solar concentrator which concentrates sun light four times (4x), eight hours per day year around.

Pushing concentration of stationary solar concentrators to the limit.

PubMed

Winston, Roland; Zhang, Weiya

2010-04-26

We give the theoretical limit of concentration allowed by nonimaging optics for stationary solar concentrators after reviewing sun-earth geometry in direction cosine space. We then discuss the design principles that we follow to approach the maximum concentration along with examples including a hollow CPC trough, a dielectric CPC trough, and a 3D dielectric stationary solar concentrator which concentrates sun light four times (4x), eight hours per day year around.

Analytical determination of critical crack size in solar cells

NASA Technical Reports Server (NTRS)

Chen, C. P.

1988-01-01

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

PubMed

Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

2011-02-09

We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

Characteristics of GaAs with inverted thermal conversion

NASA Technical Reports Server (NTRS)

Kang, C. H.; Lagowski, J.; Gatos, H. C.

1987-01-01

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

A simple model of space radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stith, J. J.; Stock, L. V.

1983-01-01

A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

Modeling of high efficiency solar cells under laser pulse for power beaming applications

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1994-01-01

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Hybrid Perovskites: Prospects for Concentrator Solar Cells.

PubMed

Lin, Qianqian; Wang, Zhiping; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

2018-04-01

Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley-Queisser limit stipulated for a single-junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge-carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy-conversion efficiencies under solar concentration, where they are able to exceed the Shockley-Queisser limit and exhibit strongly elevated open-circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications.

Glass light pipes for solar concentration

NASA Astrophysics Data System (ADS)

Madsen, C. K.; Dogan, Y.; Morrison, M.; Hu, C.; Atkins, R.

2018-02-01

Glass waveguides are fabricated using laser processing techniques that have low optical loss with >90% optical throughput. Advanced light pipes are demonstrated, including angled facets for turning mirrors used for lens-to-light pipe coupling, tapers that increase the concentration, and couplers for combining the outputs from multiple lens array elements. Because they are fabricated from glass, these light pipes can support large optical concentrations and propagate broadband solar over long distances with minimal loss and degradation compared to polymer waveguides. Applications include waveguiding solar concentrators using multi-junction PV cells, solar thermal applications and remoting solar energy, such as for daylighting. Ray trace simulations are used to estimate the surface smoothness required to achieve low loss. Optical measurements for fabricated light pipes are reported for use in waveguiding solar concentrator architectures.

Optical designs for improved solar cell performance

NASA Astrophysics Data System (ADS)

Kosten, Emily Dell

The solar resource is the most abundant renewable resource on earth, yet it is currently exploited with relatively low efficiencies. To make solar energy more affordable, we can either reduce the cost of the cell or increase the efficiency with a similar cost cell. In this thesis, we consider several different optical approaches to achieve these goals. First, we consider a ray optical model for light trapping in silicon microwires. With this approach, much less material can be used, allowing for a cost savings. We next focus on reducing the escape of radiatively emitted and scattered light from the solar cell. With this angle restriction approach, light can only enter and escape the cell near normal incidence, allowing for thinner cells and higher efficiencies. In Auger-limited GaAs, we find that efficiencies greater than 38% may be achievable, a significant improvement over the current world record. To experimentally validate these results, we use a Bragg stack to restrict the angles of emitted light. Our measurements show an increase in voltage and a decrease in dark current, as less radiatively emitted light escapes. While the results in GaAs are interesting as a proof of concept, GaAs solar cells are not currently made on the production scale for terrestrial photovoltaic applications. We therefore explore the application of angle restriction to silicon solar cells. While our calculations show that Auger-limited cells give efficiency increases of up to 3% absolute, we also find that current amorphous silicion-crystalline silicon heterojunction with intrinsic thin layer (HIT) cells give significant efficiency gains with angle restriction of up to 1% absolute. Thus, angle restriction has the potential for unprecedented one sun efficiencies in GaAs, but also may be applicable to current silicon solar cell technology. Finally, we consider spectrum splitting, where optics direct light in different wavelength bands to solar cells with band gaps tuned to those

Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance.

PubMed

Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min

2016-01-28

A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.

On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Lagowski, J.; Gatos, H. C.

1983-01-01

A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

1982-01-01

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

Hybrid Perovskites: Prospects for Concentrator Solar Cells

PubMed Central

Lin, Qianqian; Wang, Zhiping; Snaith, Henry J.; Johnston, Michael B.

2018-01-01

Abstract Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley–Queisser limit stipulated for a single‐junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge‐carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy‐conversion efficiencies under solar concentration, where they are able to exceed the Shockley–Queisser limit and exhibit strongly elevated open‐circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications. PMID:29721426

Transparent Solar Concentrator for Flat Panel Display

NASA Astrophysics Data System (ADS)

Yeh, Chia-Hung; Chang, Fuh-Yu; Young, Hong-Tsu; Hsieh, Tsung-Yen; Chang, Chia-Hsiung

2012-06-01

A new concept of the transparent solar concentrator for flat panel display is experimentally demonstrated without adversely affecting the visual effects. The solar concentrator is based on a solar light-guide plate with micro prisms, not only increasing the absorption area of solar energy but also enhancing the conversion efficiency. The incident light is guided by the designed solar light-guide plate according to the total internal reflection (TIR), and converted into electrical power by photovoltaic solar cells. The designed transparent solar concentrator was made and measured with high transparency, namely 94.8%. The developed solar energy system for display can store energy and supply the bias voltage to light on two light-emitting diodes (LEDs) successfully.

Accelerated GaAs growth through MOVPE for low-cost PV applications

NASA Astrophysics Data System (ADS)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

Concentrating Solar Power Projects in Australia | Concentrating Solar Power

Science.gov Websites

‚¬"alphabetical by project name. You can browse a project profile by clicking on the project name | NREL Australia Concentrating solar power (CSP) projects in Australia are listed belowââ

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

NASA Astrophysics Data System (ADS)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi

Concentrating Solar Power Projects in Greece | Concentrating Solar Power |

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;alphabetical by project name. You can browse a project profile by clicking on the project name. MINOS NREL Greece Concentrating solar power (CSP) projects in Greece are listed belowâ€"

Concentrating Solar Power Projects in Algeria | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. ISCC Hassi NREL Algeria Concentrating solar power (CSP) projects in Algeria are listed belowâ€"

Concentrating Solar Power Projects in Israel | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Ashalim Ashalim NREL Israel Concentrating solar power (CSP) projects in Israel are listed belowâ€"

Concentrating Solar Power Projects in Egypt | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. ISCC Kuraymat NREL Egypt Concentrating solar power (CSP) projects in Egypt are listed belowâ€"

Concentrating Solar Power Projects in Saudi Arabia | Concentrating Solar

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belowâ€"alphabetical by project name. You can browse a project profile by clicking on the project Power | NREL Saudi Arabia Concentrating solar power (CSP) projects in Saudi Arabia are listed

Concentrating Solar Power Projects in South Africa | Concentrating Solar

Science.gov Websites

belowâ€"alphabetical by project name. You can browse a project profile by clicking on the project Power | NREL South Africa Concentrating solar power (CSP) projects in South Africa are listed

Concentrating Solar Power Projects in Kuwait | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Shagaya CSP NREL Kuwait Concentrating solar power (CSP) projects in Kuwait are listed belowâ€"

Concentrating Solar Power Projects in Turkey | Concentrating Solar Power |

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;alphabetical by project name. You can browse a project profile by clicking on the project name. Greenway CSP NREL Turkey Concentrating solar power (CSP) projects in Turkey are listed belowâ€"

Concentrating Solar Power Projects in Italy | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Archimede ASE NREL Italy Concentrating solar power (CSP) projects in Italy are listed belowâ€"

Concentrating Solar Power Projects in Chile | Concentrating Solar Power |

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;alphabetical by project name. You can browse a project profile by clicking on the project name. Atacama-1 NREL Chile Concentrating solar power (CSP) projects in Chile are listed belowâ€"

AlGaAs-GaAs cascade solar cell

NASA Technical Reports Server (NTRS)

Lamorte, M. F.; Abbott, D. H.

1980-01-01

Computer modeling studies are reported for a monolithic, two junction, cascade solar cell using the AlGaAs GaAs materials combination. An optimum design was obtained through a serial optimization procedure by which conversion efficiency is maximized for operation at 300 K, AM 0, and unity solar concentration. Under these conditions the upper limit on efficiency was shown to be in excess of 29 percent, provided surface recombination velocity did not exceed 10,000 cm/sec.

Concentrating Solar Power Projects in Denmark | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Aalborg CSP-Brà NREL Denmark Concentrating solar power (CSP) projects in Denmark are listed belowâ€"

Concentrating Solar Power Projects in Canada | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. City of NREL Canada Concentrating solar power (CSP) projects in Canada are listed belowâ€"

Concentrating Solar Power Projects in Mexico | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Agua Prieta II NREL Mexico Concentrating solar power (CSP) projects in Mexico are listed belowâ€"

Error-Tolerant Quasi-Paraboloidal Solar Concentrator

NASA Technical Reports Server (NTRS)

Wagner, Howard A.

1988-01-01

Scalloping reflector surface reduces sensitivity to manufacturing and aiming errors. Contrary to intuition, most effective shape of concentrating reflector for solar heat engine is not perfect paraboloid. According to design studies for Space Station solar concentrator, scalloped, nonimaging approximation to perfect paraboloid offers better overall performance in view of finite apparent size of Sun, imperfections of real equipment, and cost of accommodating these complexities. Scalloped-reflector concept also applied to improve performance while reducing cost of manufacturing and operation of terrestrial solar concentrator.

Concentrating Solar Power Basics | NREL

Science.gov Websites

concentrating solar power systems uses the sun as a heat source. The three main types of concentrating solar toward the sun, focusing sunlight on tubes (or receivers) that run the length of the mirrors. The mirrors to allow the mirrors greater mobility in tracking the sun. A dish/engine system uses a mirrored

High-efficiency GaAs concentrator space cells

NASA Technical Reports Server (NTRS)

Werthen, J. G.; Virshup, G. F.; Macmillan, H. F.; Ford, C. W.; Hamaker, H. C.

1987-01-01

High efficiency Al sub x Ga sub 1-x As/GaAs heteroface solar concentrator cells have been developed for space applications. The cells, which were grown using metalorganic chemical vapor deposition (MOCVD), have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as the p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm by 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C.

Approaches to solar cell design for pulsed laser power receivers

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1993-01-01

Using a laser to beam power from Earth to a photovoltaic receiver in space could be a technology with applications to many space missions. Extremely high average-power lasers would be required in a wavelength range of 700-1000 nm. However, high-power lasers inherently operate in a pulsed format. Existing solar cells are not well designed to respond to pulsed incident power. To better understand cell response to pulsed illumination at high intensity, the PC-1D finite-element computer model was used to analyze the response of solar cells to continuous and pulsed laser illumination. Over 50 percent efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modeled, and the effect of laser intensity, wavelength, and bias point was studied. Three main effects decrease the efficiency of a solar cell under pulsed laser illumination: series resistance, L-C 'ringing' with the output circuit, and current limiting due to the output inductance. The problems can be solved either by changing the pulse shape or designing a solar cell to accept the pulsed input. Cell design possibilities discussed are a high-efficiency, light-trapping silicon cell, and a monolithic, low-inductance GaAs cell.

Beam-Forming Concentrating Solar Thermal Array Power Systems

NASA Technical Reports Server (NTRS)

Hoppe, Daniel J. (Inventor); Cwik, Thomas A. (Inventor); Dimotakis, Paul E. (Inventor)

2016-01-01

The present invention relates to concentrating solar-power systems and, more particularly, beam-forming concentrating solar thermal array power systems. A solar thermal array power system is provided, including a plurality of solar concentrators arranged in pods. Each solar concentrator includes a solar collector, one or more beam-forming elements, and one or more beam-steering elements. The solar collector is dimensioned to collect and divert incoming rays of sunlight. The beam-forming elements intercept the diverted rays of sunlight, and are shaped to concentrate the rays of sunlight into a beam. The steering elements are shaped, dimensioned, positioned, and/or oriented to deflect the beam toward a beam output path. The beams from the concentrators are converted to heat at a receiver, and the heat may be temporarily stored or directly used to generate electricity.

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

NASA Technical Reports Server (NTRS)

Partain, L. D.; Chung, B.-C.; Virshup, G. F.; Schultz, J. C.; Macmillan, H. F.; Ristow, M. Ladle; Kuryla, M. S.; Bertness, K. A.

1991-01-01

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

Solar concentrator with diffuser segments

NASA Astrophysics Data System (ADS)

Esparza, Diego; Moreno, Ivan

2011-08-01

Solar energy systems use concentrating optics with photovoltaic cells for optimizing the performance. Advanced concentrators are designed to maximize both the light collection and the spatial uniformity of radiation. This is important because irradiance uniformity is critical for all types of photovoltaic cells. This is difficult to achieve with traditional concentrators, which are built with polished optical surfaces. In this work we propose a new concept of solar concentrator which uses small diffuser segments in key points to increase the irradiation uniformity. We experimentally demonstrate this new concept by analyzing the effects on both efficiency and irradiance uniformity due to the incorporation of scattering ribbons in a compound parabolic concentrator.

Transmissive Diffractive Optical Element Solar Concentrators

NASA Technical Reports Server (NTRS)

Baron, Richard; Moynihan, Philip; Price, Douglas

2008-01-01

Solar-thermal-radiation concentrators in the form of transmissive diffractive optical elements (DOEs) have been proposed as alternatives to mirror-type solar concentrators now in use. In comparison with functionally equivalent mirror-type solar concentrators, the transmissive, diffractive solar concentrators would weigh and cost less, and would be subject to relaxed mechanical tolerances. A DOE concentrator would be made from a thin, flat disk or membrane of a transmissive material having a suitable index of refraction. By virtue of its thinness, the DOE concentrator would have an areal mass density significantly less than that of a functionally equivalent conventional mirror. The DOE concentrator would have a relatively wide aperture--characterized by a focal-length/aperture-diameter ratio ('f number') on the order of 1. A kinoform (a surface-relief phase hologram) of high diffractive order would be microfabricated onto one face of the disk. The kinoform (see figure) would be designed to both diffract and refract incident solar radiation onto a desired focal region, without concern for forming an image of the Sun. The high diffractive order of this kinoform (in contradistinction to the low diffractive orders of some other kinoforms) would be necessary to obtain the desired f number of 1, which, in turn, would be necessary for obtaining a desired concentration ratio of 2,500 or greater. The design process of optimizing the concentration ratio of a proposed DOE solar concentrator includes computing convolutions of the optical bandwidth of the Sun with the optical transmission of the diffractive medium. Because, as in the cases of other non-imaging, light-concentrating optics, image quality is not a design requirement, the process also includes trading image quality against concentration ratio. A baseline design for one example calls for an aperture diameter of 1 m. This baseline design would be scalable to a diameter as large as 10 m, or to a smaller diameter for a

Concentrating Solar Power Projects - National Solar Thermal Power Facility

Science.gov Websites

| Concentrating Solar Power | NREL National Solar Thermal Power Facility Status Date: February 13, 2014 Project Overview Project Name: National Solar Thermal Power Facility Country: India Location Capacity (Net): 1.0 MW Output Type: Steam Rankine Thermal Storage Storage Type: None

Solar concentrator

NASA Technical Reports Server (NTRS)

Simpson, J. G. (Inventor)

1979-01-01

An improved solar concentrator is characterized by a number of elongated supporting members arranged in substantial horizontal parallelism with the axis and intersecting a common curve. A tensioned sheet of flexible reflective material is disposed in engaging relation with the supporting members in order to impart to the tensioned sheet a catenary configuration.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

NASA Astrophysics Data System (ADS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-08-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Solar-hydrogen generation and solar concentration (Conference Presentation)

NASA Astrophysics Data System (ADS)

Chinello, Enrico; Modestino, Miguel A.; Schüttauf, Jan-Willem; Lambelet, David; Delfino, Antonio; Dominé, Didier; Faes, Antonin; Despeisse, Matthieu; Bailat, Julien; Psaltis, Demetri; Fernandez Rivas, David; Ballif, Christophe; Moser, Christophe

2016-09-01

We successfully demonstrated and reported the highest solar-to-hydrogen efficiency with crystalline silicon cells and Earth-abundant electrocatalysts under unconcentrated solar radiation. The combination of hetero-junction silicon cells and a 3D printed Platinum/Iridium-Oxide electrolyzer has been proven to work continuously for more than 24 hours in neutral environment, with a stable 13.5% solar-to-fuel efficiency. Since the hydrogen economy is expected to expand to a global scale, we demonstrated the same efficiency with an Earth-abundant electrolyzer based on Nickel in a basic medium. In both cases, electrolyzer and photovoltaic cells have been specifically sized for their characteristic curves to intersect at a stable operating point. This is foreseen to guarantee constant operation over the device lifetime without performance degradation. The next step is to lower the production cost of hydrogen by making use of medium range solar concentration. It permits to limit the photoabsorbing area, shown to be the cost-driver component. We have recently modeled a self-tracking solar concentrator, able to capture sunlight within the acceptance angle range +/-45°, implementing 3 custom lenses. The design allows a fully static device, avoiding the external tracker that was necessary in a previously demonstrated +/-16° angular range concentrator. We will show two self-tracking methods. The first one relies on thermal expansion whereas the second method relies on microfluidics.

Concentrating Solar Power Projects - La Dehesa | Concentrating Solar Power

Science.gov Websites

| NREL Dehesa This page provides information on La Dehesa, a concentrating solar power (CSP : March 20, 2017 Project Overview Project Name: La Dehesa Country: Spain Location: La Garrovilla (Badajoz ? Background Technology: Parabolic trough Status: Operational Country: Spain City: La Garrovilla Region

Refractive Secondary Concentrators for Solar Thermal Applications

NASA Technical Reports Server (NTRS)

Wong, Wayne A.; Macosko, Robert P.

1999-01-01

The NASA Glenn Research Center is developing technologies that utilize solar energy for various space applications including electrical power conversion, thermal propulsion, and furnaces. Common to all of these applications is the need for highly efficient, solar concentration systems. An effort is underway to develop the innovative single crystal refractive secondary concentrator, which uses refraction and total internal reflection to efficiently concentrate and direct solar energy. The refractive secondary offers very high throughput efficiencies (greater than 90%), and when used in combination with advanced primary concentrators, enables very high concentration ratios (10,0(X) to 1) and very high temperatures (greater than 2000 K). Presented is an overview of the refractive secondary concentrator development effort at the NASA Glenn Research Center, including optical design and analysis techniques, thermal modeling capabilities, crystal materials characterization testing, optical coatings evaluation, and component testing. Also presented is a discussion of potential future activity and technical issues yet to be resolved. Much of the work performed to date has been in support of the NASA Marshall Space Flight Center's Solar Thermal Propulsion Program. The many benefits of a refractive secondary concentrator that enable efficient, high temperature thermal propulsion system designs, apply equally well to other solar applications including furnaces and power generation systems such as solar dynamics, concentrated thermal photovoltaics, and thermionics.

GaAsP Top Solar Cells for Increased Solar Conversion Efficiency

DTIC Science & Technology

1989-01-01

responsible for high surface recombination in devices made from that material. Inorganic sulfide films have been used on GaAs to reduce surface recom...same time, Hamaker et al [2] demonstrated less radiation damage in 1.93 eV AlGaAs solar cells than GaAs counterparts. In very recent results on...material. Yablonovitch and coworkers [25] have used inorganic sulfide films on GaAs to reduce surface recombination rates to that of the nearly ideal AlGaAs

Concentrating Solar Power Projects - Redstone Solar Thermal Power Plant |

Science.gov Websites

Concentrating Solar Power | NREL Redstone Solar Thermal Power Plant Status Date: September 8 , 2016 Project Overview Project Name: Redstone Solar Thermal Power Plant Country: South Africa Location ): 100.0 MW Turbine Capacity (Net): 100.0 MW Cooling Method: Dry cooling Thermal Storage Storage Type: 2

Concentrating Solar Power Projects - Gemasolar Thermosolar Plant |

Science.gov Websites

Concentrating Solar Power | NREL Gemasolar Thermosolar Plant This page provides information on Gemasolar Thermosolar Plant, a concentrating solar power (CSP) project, with data organized by background , participants, and power plant configuration. Gemasolar is the first high-temperature solar receiver with molten

Concentrating Solar Power Projects - Saguaro Power Plant | Concentrating

Science.gov Websites

Solar Power | NREL Saguaro Power Plant This page provides information on Saguaro, a concentrating solar power (CSP) project, with data organized by background, participants, and power plant configuration. Status Date: April 14, 2017 Project Overview Project Name: Saguaro Power Plant Country: United

Concentrating Solar Power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weinstein, Lee A.; Loomis, James; Bhatia, Bikram

2015-12-09

Solar energy is a bountiful renewable energy resource: the energy in the sunlight that reaches Earth in an hour exceeds the energy consumed by all of humanity in a year.(1) While the phrase “solar energy conversion” probably brings photovoltaic (PV) cells to mind first, PV is not the only option for generating electricity from sunlight. Another promising technology for solar energy conversion is solar–thermal conversion, commonly referred to as concentrating solar power (CSP).(2) The first utility-scale CSP plants were constructed in the 1980s, but in the two decades that followed, CSP saw little expansion.(3, 4) More recent years, however, havemore » seen a CSP renaissance due to unprecedented growth in the adoption of CSP.(3, 5) Photographs of two operating CSP plants, a parabolic trough collector plant and a central receiver (or “power tower”), are shown here.« less

Oxygen in GaAs - Direct and indirect effects

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

1984-01-01

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

PubMed

Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

2014-04-22

Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Concentrator enhanced solar arrays design study

NASA Technical Reports Server (NTRS)

Lott, D. R.

1978-01-01

The analysis and preliminary design of a 25 kW concentrator enhanced lightweight flexible solar array are presented. The study was organized into five major tasks: (1) assessment and specification of design requirements; (2) mechanical design; (3) electric design; (4) concentrator design; and (5) cost projection. The tasks were conducted in an iterative manner so as to best derive a baseline design selection. The objectives of the study are discussed and comparative configurations and mass data on the SEP (Solar Electric Propulsion) array design, concentrator design options and configuration/mass data on the selected concentrator enhanced solar array baseline design are presented. Design requirements supporting design analysis and detailed baseline design data are discussed. The results of the cost projection analysis and new technology are also discussed.

Measurement and Characterization of Concentrator Solar Cells II

NASA Technical Reports Server (NTRS)

Scheiman, Dave; Sater, Bernard L.; Chubb, Donald; Jenkins, Phillip; Snyder, Dave

2005-01-01

Concentrator solar cells are continuing to get more consideration for use in power systems. This interest is because concentrator systems can have a net lower cost per watt in solar cell materials plus ongoing improvements in sun-tracking technology. Quantitatively measuring the efficiency of solar cells under concentration is difficult. Traditionally, the light concentration on solar cells has been determined by using a ratio of the measured solar cell s short circuit current to that at one sun, this assumes that current changes proportionally with light intensity. This works well with low to moderate (<20 suns) concentration levels on "well-behaved" linear cells but does not apply when cells respond superlinearly, current increases faster than intensity, or sublinearly, current increases more slowly than intensity. This paper continues work on using view factors to determine the concentration level and linearity of the solar cell with mathematical view factor analysis and experimental results [1].

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Integrated Solar Concentrator and Shielded Radiator

NASA Technical Reports Server (NTRS)

Clark, David Larry

2010-01-01

A shielded radiator is integrated within a solar concentrator for applications that require protection from high ambient temperatures with little convective heat transfer. This innovation uses a reflective surface to deflect ambient thermal radiation, shielding the radiator. The interior of the shield is also reflective to provide a view factor to deep space. A key feature of the shield is the parabolic shape that focuses incoming solar radiation to a line above the radiator along the length of the trough. This keeps the solar energy from adding to the radiator load. By placing solar cells along this focal line, the concentration of solar energy reduces the number and mass of required cells. By shielding the radiator, the effective reject temperature is much lower, allowing lower radiator temperatures. This is particularly important for lower-temperature processes, like habitat heat rejection and fuel cell operations where a high radiator temperature is not feasible. Adding the solar cells in the focal line uses the concentrating effect of the shield to advantage to accomplish two processes with a single device. This shield can be a deployable, lightweight Mylar structure for compact transport.

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less

Parabolic solar concentrator

NASA Astrophysics Data System (ADS)

Tecpoyotl-Torres, M.; Campos-Alvarez, J.; Tellez-Alanis, F.; Sánchez-Mondragón, J.

2006-08-01

In this work we present the basis of the solar concentrator design, which has is located at Temixco, Morelos, Mexico. For this purpose, this place is ideal due to its geographic and climatic conditions, and in addition, because it accounts with the greatest constant illumination in Mexico. For the construction of the concentrator we use a recycled parabolic plate of a telecommunications satellite dish (NEC). This plate was totally covered with Aluminum. The opening diameter is of 332 cm, the focal length is of 83 cm and the opening angle is of 90°. The geometry of the plate guaranties that the incident beams, will be collected at the focus. The mechanical treatment of the plate produces an average reflectance of 75% in the visible region of the solar spectrum, and of 92% for wavelengths up to 3μm in the infrared region. We obtain up to 2000°C of temperature concentration with this setup. The reflectance can be greatly improved, but did not consider it as typical practical use. The energy obtained can be applied to conditions that require of those high calorific energies. In order to optimize the operation of the concentrator we use a control circuit designed to track the apparent sun position.

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Solar Concentrator Advanced Development Program, Task 1

NASA Technical Reports Server (NTRS)

1986-01-01

Solar dynamic power generation has been selected by NASA to provide power for the space station. Solar dynamic concentrator technology has been demonstrated for terrestrial applications but has not been developed for space applications. The object of the Solar Concentrator Advanced Development program is to develop the technology of solar concentrators which would be used on the space station. The first task of this program was to develop conceptual concentrator designs and perform trade-off studies and to develop a materials data base and perform material selection. Three unique concentrator concepts; Truss Hex, Spline Radial Panel and Domed Fresnel, were developed and evaluated against weighted trade criteria. The Truss Hex concept was recommended for the space station. Materials data base development demonstrated that several material systems are capable of withstanding extended periods of atomic oxygen exposure without undesirable performance degradation. Descriptions of the conceptual designs and materials test data are included.

Influence of carrier concentration on the performance of CIAS solar cell

NASA Astrophysics Data System (ADS)

Patel, Kinjal; Ray, Jaymin

2018-05-01

Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

Methods and systems for concentrated solar power

DOEpatents

Ma, Zhiwen

2016-05-24

Embodiments described herein relate to a method of producing energy from concentrated solar flux. The method includes dropping granular solid particles through a solar flux receiver configured to transfer energy from concentrated solar flux incident on the solar flux receiver to the granular solid particles as heat. The method also includes fluidizing the granular solid particles from the solar flux receiver to produce a gas-solid fluid. The gas-solid fluid is passed through a heat exchanger to transfer heat from the solid particles in the gas-solid fluid to a working fluid. The granular solid particles are extracted from the gas-solid fluid such that the granular solid particles can be dropped through the solar flux receiver again.

Development of solar concentrators for high-power solar-pumped lasers.

PubMed

Dinh, T H; Ohkubo, T; Yabe, T

2014-04-20

We have developed unique solar concentrators for solar-pumped solid-state lasers to improve both efficiency and laser output power. Natural sunlight is collected by a primary concentrator which is a 2  m×2  m Fresnel lens, and confined by a cone-shaped hybrid concentrator. Such solar power is coupled to a laser rod by a cylinder with coolant surrounding it that is called a liquid light-guide lens (LLGL). Performance of the cylindrical LLGL has been characterized analytically and experimentally. Since a 14 mm diameter LLGL generates efficient and uniform pumping along a Nd:YAG rod that is 6 mm in diameter and 100 mm in length, 120 W cw laser output is achieved with beam quality factor M2 of 137 and overall slope efficiency of 4.3%. The collection efficiency is 30.0  W/m2, which is 1.5 times larger than the previous record. The overall conversion efficiency is more than 3.2%, which can be comparable to a commercial lamp-pumped solid-state laser. The concept of the light-guide lens can be applied for concentrator photovoltaics or other solar energy optics.

Horizontally staggered lightguide solar concentrator with lateral displacement tracking for high concentration applications.

PubMed

Ma, Hongcai; Wu, Lin

2015-07-10

We present the design of a horizontally staggered lightguide solar concentrator with lateral displacement tracking for high concentration applications. This solar concentrator consists of an array of telecentric primary concentrators, a horizontally staggered lightguide layer, and a vertically tapered lightguide layer. The primary concentrator is realized by two plano-aspheric lenses with lateral movement and maintains a high F-number over an angle range of ±23.5°. The results of the simulations show that the solar concentrator achieves a high concentration ratio of 500× with ±0.5° of acceptance angle by a single-axis tracker and dual lateral translation stages.

Resonance-shifting luminescent solar concentrators

DOEpatents

Giebink, Noel Christopher; Wiederrecht, Gary P; Wasielewski, Michael R

2014-09-23

An optical system and method to overcome luminescent solar concentrator inefficiencies by resonance-shifting, in which sharply directed emission from a bi-layer cavity into a glass substrate returns to interact with the cavity off-resonance at each subsequent reflection, significantly reducing reabsorption loss en route to the edges. In one embodiment, the system comprises a luminescent solar concentrator comprising a transparent substrate, a luminescent film having a variable thickness; and a low refractive index layer disposed between the transparent substrate and the luminescent film.

Resonance-shifting luminescent solar concentrators

DOEpatents

Giebink, Noel Christopher; Wiederrecht, Gary P.; Wasielewski, Michael R.

2018-01-23

An optical system and method to overcome luminescent solar concentrator inefficiencies by resonance-shifting, in which sharply directed emission from a bi-layer cavity into a glass substrate returns to interact with the cavity off-resonance at each subsequent reflection, significantly reducing reabsorption loss en route to the edges. In one embodiment, the system comprises a luminescent solar concentrator comprising a transparent substrate, a luminescent film having a variable thickness; and a low refractive index layer disposed between the transparent substrate and the luminescent film.

Radiation Damage Workshop report. [solar cells

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.

Nonimaging concentrators for solar thermal energy

NASA Astrophysics Data System (ADS)

Winston, R.; Gallagher, J. J.

1980-03-01

A small experimental solar collector test facility was used to explore applications of nonimaging optics for solar thermal concentration in three substantially different configurations: a single stage system with moderate concentration on an evacuated absorber (a 5.25X evacuated tube Compound Parabolic Concentrator or CPC), a two stage system with high concentration and a non-evacuated absorber (a 16X Fresnel lens/CPC type mirror) and moderate concentration single stage systems with non-evacuated absorbers for lower temperature (a 3X and a 6.5X CPC). Prototypes of each of these systems were designed, built and tested. The performance characteristics are presented.

Solar Concentrator Advanced Development Program

NASA Technical Reports Server (NTRS)

Knasel, Don; Ehresman, Derik

1989-01-01

The Solar Concentrator Advanced Development Project has successfully designed, fabricated, and tested a full scale prototypical solar dynamic concentrator for space station applications. A Truss Hexagonal Panel reflector was selected as a viable solar concentrator concept to be used for space station applications. This concentrator utilizes a modular design approach and is flexible in attainable flux profiles and assembly techniques. The detailed design of the concentrator, which included structural, thermal and optical analysis, identified the feasibility of the design and specific technologies that were required to fabricate it. The needed surface accuracy of the reflectors surface was found to be very tight, within 5 mrad RMS slope error, and results in very close tolerances for fabrication. To meet the design requirements, a modular structure composed of hexagonal panels was used. The panels, made up of graphite epoxy box beams provided the strength, stiffness and dimensional stability needed. All initial project requirements were met or exceeded by hardware demonstration. Initial testing of structural repeatability of a seven panel portion of the concentrator was followed by assembly and testing of the full nineteen panel structure. The testing, which consisted of theodolite and optical measurements over an assembly-disassembly-reassembly cycle, demonstrated that the concentrator maintained the as-built contour and optical characteristics. The facet development effort within the project, which included developing the vapor deposited reflective facet, produced a viable design with demonstrated optical characteristics that are within the project goals.

Refractive Secondary Solar Concentrator Demonstrated High-Temperature Operation

NASA Technical Reports Server (NTRS)

Wong, Wayne A.

2002-01-01

Space applications that utilize solar thermal energy--such as electric power conversion systems, thermal propulsion systems, and furnaces--require highly efficient solar concentration systems. The NASA Glenn Research Center is developing the refractive secondary concentrator, which uses refraction and total internal reflection to efficiently concentrate and direct solar energy. When used in combination with advanced lightweight primary concentrators, such as inflatable thin films, the refractive secondary concentrator enables very high system concentration ratios and very high temperatures. Last year, Glenn successfully demonstrated a secondary concentrator throughput efficiency of 87 percent, with a projected efficiency of 93 percent using an antireflective coating. Building on this achievement, Glenn recently successfully demonstrated high-temperature operation of the secondary concentrator when it was used to heat a rhenium receiver to 2330 F. The high-temperature demonstration of the concentrator was conducted in Glenn's 68-ft long Tank 6 thermal vacuum facility equipped with a solar simulator. The facility has a rigid panel primary concentrator that was used to concentrate the light from the solar simulator onto the refractive secondary concentrator. NASA Marshall Space Flight Center provided a rhenium cavity, part of a solar thermal propulsion engine, to serve as the high-temperature receiver. The prototype refractive secondary concentrator, measuring 3.5 in. in diameter and 11.2 in. long, is made of single-crystal sapphire. A water-cooled splash shield absorbs spillage light outside of the 3.5-in. concentrator aperture. Multilayer foil insulation composed of tungsten, molybdenum, and niobium is used to minimize heat loss from the hightemperature receiver. A liquid-cooled canister calorimeter is used to measure the heat loss through the multilayer foil insulation.

Concentrating Solar Power Fact Sheet

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2015-12-01

This fact sheet is an overview of the Concentrating Solar Power (CSP) subprogram at the U.S. Department of Energy SunShot Initiative. CSP is a dispatchable, renewable energy option that uses mirrors to focus and concentrate sunlight onto a receiver, from which a heat transfer fluid carries the intense thermal energy to a power block to generate electricity. CSP systems can store solar energy to be used when the sun is not shining. It will help meet the nation’s goal of making solar energy fully cost-competitive with other energy sources by the end of the decade. Worldwide, CSP activity is rapidlymore » scaling, with approximately 10 gigawatts (GW) in various stages of operation or development. In the United States alone, nearly 2 GW of CSP are in operation.« less

Non-tracking solar concentrator with a high concentration ratio

DOEpatents

Hinterberger, Henry

1977-01-01

A nontracking solar concentrator with a high concentration ratio is provided. The concentrator includes a plurality of energy absorbers which communicate with a main header by which absorbed heat is removed. Undesired heat flow of those absorbers not being heated by radiant energy at a particular instant is impeded, improving the efficiency of the concentrator.

Planar photovoltaic solar concentrator module

DOEpatents

Chiang, Clement J.

1992-01-01

A planar photovoltaic concentrator module for producing an electrical signal from incident solar radiation includes an electrically insulating housing having a front wall, an opposing back wall and a hollow interior. A solar cell having electrical terminals is positioned within the interior of the housing. A planar conductor is connected with a terminal of the solar cell of the same polarity. A lens forming the front wall of the housing is operable to direct solar radiation incident to the lens into the interior of the housing. A refractive optical element in contact with the solar cell and facing the lens receives the solar radiation directed into the interior of the housing by the lens and directs the solar radiation to the solar cell to cause the solar cell to generate an electrical signal. An electrically conductive planar member is positioned in the housing to rest on the housing back wall in supporting relation with the solar cell terminal of opposite polarity. The planar member is operable to dissipate heat radiated by the solar cell as the solar cell generates an electrical signal and further forms a solar cell conductor connected with the solar cell terminal to permit the electrical signal generated by the solar cell to be measured between the planar member and the conductor.

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Ford, C. W.; Werthen, J. G.

1984-01-01

Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

Advanced reflector materials for solar concentrators

NASA Astrophysics Data System (ADS)

Jorgensen, Gary; Williams, Tom; Wendelin, Tim

1994-10-01

This paper describes the research and development at the US National Renewable Energy Laboratory (NREL) in advanced reflector materials for solar concentrators. NREL's research thrust is to develop solar reflector materials that maintain high specular reflectance for extended lifetimes under outdoor service conditions and whose cost is significantly lower than existing products. Much of this work has been in collaboration with private-sector companies that have extensive expertise in vacuum-coating and polymer-film technologies. Significant progress and other promising developments will be discussed. These are expected to lead to additional improvements needed to commercialize solar thermal concentration systems and make them economically attractive to the solar manufacturing industry. To explicitly demonstrate the optical durability of candidate reflector materials in real-world service conditions, a network of instrumented outdoor exposure sites has been activated.

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs

NASA Astrophysics Data System (ADS)

Tan, T. Y.; You, H.-M.; Gösele, U. M.

1993-03-01

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, V {Ga/3-}, has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V {Ga/3-}concentration, C_{V_{_{Ga} }^{3 - } }^{eq} (n), has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the C_{V_{_{Ga} }^{3 - } }^{eq} (n) value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This C_{V_{_{Ga} }^{3 - } }^{eq} (n) property provides explanations to a number of outstanding experimental results, either requiring the interpretation that V {Ga/3-}has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Growth and characteristics of p-type doped GaAs nanowire

NASA Astrophysics Data System (ADS)

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-05-01

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

Planar photovoltaic solar concentrator module

DOEpatents

Chiang, C.J.

1992-12-01

A planar photovoltaic concentrator module for producing an electrical signal from incident solar radiation includes an electrically insulating housing having a front wall, an opposing back wall and a hollow interior. A solar cell having electrical terminals is positioned within the interior of the housing. A planar conductor is connected with a terminal of the solar cell of the same polarity. A lens forming the front wall of the housing is operable to direct solar radiation incident to the lens into the interior of the housing. A refractive optical element in contact with the solar cell and facing the lens receives the solar radiation directed into the interior of the housing by the lens and directs the solar radiation to the solar cell to cause the solar cell to generate an electrical signal. An electrically conductive planar member is positioned in the housing to rest on the housing back wall in supporting relation with the solar cell terminal of opposite polarity. The planar member is operable to dissipate heat radiated by the solar cell as the solar cell generates an electrical signal and further forms a solar cell conductor connected with the solar cell terminal to permit the electrical signal generated by the solar cell to be measured between the planar member and the conductor. 5 figs.

Research on gallium arsenide diffused junction solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandi, S. K.

1984-01-01

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

Facilities | Concentrating Solar Power | NREL

Science.gov Websites

sun in elevation and azimuth. Concentrating collectors require 2-axis tracking to focus sunlight on a would imply tracking to minimize variation in solar resource during on-sun testing. As applicable, the . Hexagonal mirrors of the HFSF's primary system concentrate the sun, which can be further concentrated as

Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

1986-01-01

A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

Evaluation of AlsubxGasub1-xsubAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.; Narayanan, A.; Li, S. S.

1985-01-01

Single junction GaAs solar cells have already attained an efficiency of 19% AMO which could potentially be increased to approx 20%, with some optimization. To achieve the higher efficiency the concept of multibandgap solar cells which utilizes a wider region of the solar spectrum should be sed. One of the materials for fabricating the top cell in a multibandgap solar cell is AlGaAs because it is compatible with GaAs in bandgap and lattice match. This is a very important consideration from the materials technology point of view, and the viability of this approach is evaluated.

Concentrating Solar Power Program Review 2013 (Book) (Revised)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

2013-06-01

This U.S. Department of Energy (DOE) Concentrating Solar Power Program Review Meeting booklet will be provided to attendees at the Concentrating Solar Power Review Meeting in Phoenix, Arizona on April 23-25, 2013.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

NASA Astrophysics Data System (ADS)

Wang, Shu-Yi

To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

Lightweight concentrator module with 30 percent AM0 efficient GaAs/GaSb tandem cells

NASA Technical Reports Server (NTRS)

Avery, J. E.; Fraas, L. M.; Sundaram, V. S.; Mansoori, N.; Yerkes, J. W.; Brinker, D. J.; Curtis, H. B.; O'Neill, M. J.

1990-01-01

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

High purity low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1982-01-01

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Concentrating Solar Power Projects - Nevada Solar One | Concentrating Solar

Science.gov Websites

Power | NREL Nevada Solar One This page provides information on Nevada Solar One, a configuration. Acciona Energy's Nevada Solar One is the third largest CSP plant in the world and the first plant roads. Project Overview Project Name: Nevada Solar One (NSO) Country: United States Location: Boulder

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

Transient Thermal Analysis of a Refractive Secondary Solar Concentrator

NASA Technical Reports Server (NTRS)

Geng, Steven M.; Macosko, Robert P.

1999-01-01

A secondary concentrator is an optical device that accepts solar energy from a primary concentrator and further intensifies and directs the solar flux. The refractive secondary is one such device; fabricated from an optically clear solid material that can efficiently transmit the solar energy by way of refraction and total internal reflection. When combined with a large state-of-the-art rigid or inflatable primary concentrator, the refractive secondary enables solar concentration ratios of 10,000 to 1. In support of potential space solar thermal power and propulsion applications, the NASA Glenn Research Center is developing a single-crystal refractive secondary concentrator for use at temperatures exceeding 2000K. Candidate optically clear single-crystal materials like sapphire and zirconia are being evaluated for this application. To support this evaluation, a three-dimensional transient thermal model of a refractive secondary concentrator in a typical solar thermal propulsion application was developed. This paper describes the model and presents thermal predictions for both sapphire and zirconia prototypes. These predictions are then used to establish parameters for analyzing and testing the materials for their ability to survive thermal shock and stress.

Concentrating Solar Power Projects - Xina Solar One | Concentrating Solar

Science.gov Websites

Power | NREL Xina Solar One Abengoa has been selected by the Department of Energy (DOE) of South Africa to develop Xina Solar One, a 100 MW parabolic trough plant with a five-hour thermal energy with Abengoa's plant KaXu Solar One that is currently under construction in the country. Xina Solar One

Concentrating photovoltaic solar panel

DOEpatents

Cashion, Steven A; Bowser, Michael R; Farrelly, Mark B; Hines, Braden E; Holmes, Howard C; Johnson, Jr., Richard L; Russell, Richard J; Turk, Michael F

2014-04-15

The present invention relates to photovoltaic power systems, photovoltaic concentrator modules, and related methods. In particular, the present invention features concentrator modules having interior points of attachment for an articulating mechanism and/or an articulating mechanism that has a unique arrangement of chassis members so as to isolate bending, etc. from being transferred among the chassis members. The present invention also features adjustable solar panel mounting features and/or mounting features with two or more degrees of freedom. The present invention also features a mechanical fastener for secondary optics in a concentrator module.

Recent developments in luminescent solar concentrators

NASA Astrophysics Data System (ADS)

van Sark, W. G. J. H. M.

2014-10-01

High efficiency photovoltaic devices combine full solar spectrum absorption and effective generation and collection of charge carriers, while commercial success depends on cost effectiveness in manufacturing. Spectrum modification using down shifting has been demonstrated in luminescent solar concentrators (LSCs) since the 1970s, as a cheap alternative for standard c-Si technology. LSCs consist of a highly transparent plastic plate, in which luminescent species are dispersed, which absorb incident light and emit light at a red-shifted wavelength, with high quantum efficiency. Material issues have hampered efficiency improvements, in particular re-absorption of light emitted by luminescent species and stability of these species. In this contribution, approaches are reviewed on minimizing re-absorption, which should allow surpassing the 10% luminescent solar concentrator efficiency barrier.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Nonimaging solar concentrator with uniform irradiance

NASA Astrophysics Data System (ADS)

Winston, Roland; O'Gallagher, Joseph J.; Gee, Randy C.

2004-09-01

We report results of a study our group has undertaken under NREL/DOE auspices to design a solar concentrator with uniform irradiance on a planar target. This attribute is especially important for photovoltaic concentrators.

White butterflies as solar photovoltaic concentrators.

PubMed

Shanks, Katie; Senthilarasu, S; Ffrench-Constant, Richard H; Mallick, Tapas K

2015-07-31

Man's harvesting of photovoltaic energy requires the deployment of extensive arrays of solar panels. To improve both the gathering of thermal and photovoltaic energy from the sun we have examined the concept of biomimicry in white butterflies of the family Pieridae. We tested the hypothesis that the V-shaped posture of basking white butterflies mimics the V-trough concentrator which is designed to increase solar input to photovoltaic cells. These solar concentrators improve harvesting efficiency but are both heavy and bulky, severely limiting their deployment. Here, we show that the attachment of butterfly wings to a solar cell increases its output power by 42.3%, proving that the wings are indeed highly reflective. Importantly, and relative to current concentrators, the wings improve the power to weight ratio of the overall structure 17-fold, vastly expanding their potential application. Moreover, a single mono-layer of scale cells removed from the butterflies' wings maintained this high reflectivity showing that a single layer of scale cell-like structures can also form a useful coating. As predicted, the wings increased the temperature of the butterflies' thorax dramatically, showing that the V-shaped basking posture of white butterflies has indeed evolved to increase the temperature of their flight muscles prior to take-off.

White butterflies as solar photovoltaic concentrators

PubMed Central

Shanks, Katie; Senthilarasu, S.; ffrench-Constant, Richard H.; Mallick, Tapas K.

2015-01-01

Man’s harvesting of photovoltaic energy requires the deployment of extensive arrays of solar panels. To improve both the gathering of thermal and photovoltaic energy from the sun we have examined the concept of biomimicry in white butterflies of the family Pieridae. We tested the hypothesis that the V-shaped posture of basking white butterflies mimics the V-trough concentrator which is designed to increase solar input to photovoltaic cells. These solar concentrators improve harvesting efficiency but are both heavy and bulky, severely limiting their deployment. Here, we show that the attachment of butterfly wings to a solar cell increases its output power by 42.3%, proving that the wings are indeed highly reflective. Importantly, and relative to current concentrators, the wings improve the power to weight ratio of the overall structure 17-fold, vastly expanding their potential application. Moreover, a single mono-layer of scale cells removed from the butterflies’ wings maintained this high reflectivity showing that a single layer of scale cell-like structures can also form a useful coating. As predicted, the wings increased the temperature of the butterflies’ thorax dramatically, showing that the V-shaped basking posture of white butterflies has indeed evolved to increase the temperature of their flight muscles prior to take-off. PMID:26227341

White butterflies as solar photovoltaic concentrators

NASA Astrophysics Data System (ADS)

Shanks, Katie; Senthilarasu, S.; Ffrench-Constant, Richard H.; Mallick, Tapas K.

2015-07-01

Man’s harvesting of photovoltaic energy requires the deployment of extensive arrays of solar panels. To improve both the gathering of thermal and photovoltaic energy from the sun we have examined the concept of biomimicry in white butterflies of the family Pieridae. We tested the hypothesis that the V-shaped posture of basking white butterflies mimics the V-trough concentrator which is designed to increase solar input to photovoltaic cells. These solar concentrators improve harvesting efficiency but are both heavy and bulky, severely limiting their deployment. Here, we show that the attachment of butterfly wings to a solar cell increases its output power by 42.3%, proving that the wings are indeed highly reflective. Importantly, and relative to current concentrators, the wings improve the power to weight ratio of the overall structure 17-fold, vastly expanding their potential application. Moreover, a single mono-layer of scale cells removed from the butterflies’ wings maintained this high reflectivity showing that a single layer of scale cell-like structures can also form a useful coating. As predicted, the wings increased the temperature of the butterflies’ thorax dramatically, showing that the V-shaped basking posture of white butterflies has indeed evolved to increase the temperature of their flight muscles prior to take-off.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

Heterojunction solar cell

DOEpatents

Olson, Jerry M.

1994-01-01

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

A High-Efficiency Refractive Secondary Solar Concentrator for High Temperature Solar Thermal Applications

NASA Technical Reports Server (NTRS)

Piszczor, Michael F., Jr.; Macosko, Robert P.

2000-01-01

A refractive secondary solar concentrator is a non-imaging optical device that accepts focused solar energy from a primary concentrator and redirects that light, by means of refraction and total internal reflection (TIR) into a cavity where the solar energy is used for power and/or propulsion applications. This concept offers a variety of advantages compared to typical reflective secondary concentrators (or the use of no secondary at all): higher optical efficiency, minimal secondary cooling requirements, a smaller cavity aperture, a reduction of outgassing from the cavity and flux tailoring of the solar energy within the heat receiver. During the past 2 years, NASA Lewis has been aggressively developing this concept in support of the NASA Marshall Shooting Star Flight Experiment. This paper provides a brief overview of the advantages and technical challenges associated with the development of a refractive secondary concentrator and the fabrication of a working unit in support of the flight demonstration program.

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

NASA Astrophysics Data System (ADS)

Dagytė, Vilgailė; Barrigón, Enrique; Zhang, Wei; Zeng, Xulu; Heurlin, Magnus; Otnes, Gaute; Anttu, Nicklas; Borgström, Magnus T.

2017-12-01

Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.

Thermal stability of gallium arsenide solar cells

NASA Astrophysics Data System (ADS)

Papež, Nikola; Škvarenina, Ľubomír.; Tofel, Pavel; Sobola, Dinara

2017-12-01

This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30-650 °C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 °C thermal processing, its current-voltage characteristic remained without a significant change.

Concentrating Solar Power Projects by Project Name | Concentrating Solar

Science.gov Websites

Tower Plant Gujarat Solar One Gulang 100MW Thermal Oil Parabolic Trough project Guzmán Hami 50 MW CSP ¼lich Solar Tower Kathu Solar Park KaXu Solar One Khi Solar One Kimberlina Solar Thermal Power Plant Solar Plant MINOS Mojave Solar Project Morón National Solar Thermal Power Facility Nevada Solar One

Microprocessor design for GaAs technology

NASA Astrophysics Data System (ADS)

Milutinovic, Veljko M.

Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells

DOE PAGES

Oshima, Ryuji; France, Ryan M.; Geisz, John F.; ...

2016-10-13

The growth of quaternary Ga 0.68In 0.32As 0.35P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation, we fabricated 1 um-thick lattice-matched GaInAsP films grown on GaAs(001) for application to solar cells. In order to characterize the effect of the surface diffusion of adatoms on the material quality of alloys, the growth temperature and substrate miscut are varied. Transmission electron microscopy and two-dimensional in-situ multi-beam optical stress determine that growth temperatures of 650 degrees C and below enhance the formation of the CuPtB atomic ordering andmore » suppress material decomposition, which is found to occur at the growth surface. The root-mean-square (RMS) roughness is reduced from 33.6 nm for 750 degrees C to 1.62 nm for 650 degrees C, determined by atomic force microscopy. Our initial investigations show that the RMS roughness can be further reduced using increased miscut angle, and substrates miscut toward (111)A, leading to an RMS roughness of 0.56 nm for the sample grown at 600 degrees C on GaAs miscut 6 degrees toward (111)A. Using these conditions, we fabricate an inverted hetero-junction 1.62 eV Ga 0.68In 0.32As 0.35P 0.65 solar cell without an anti-reflection coating with a short-circuit current density, open-circuit voltage, fill factor, and efficiency of 12.23 mA/cm2, 1.12 V, 86.18%, and 11.80%, respectively.« less

Heterojunction solar cell

DOEpatents

Olson, J.M.

1994-08-30

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Patterned radial GaAs nanopillar solar cells.

PubMed

Mariani, Giacomo; Wong, Ping-Show; Katzenmeyer, Aaron M; Léonard, Francois; Shapiro, Joshua; Huffaker, Diana L

2011-06-08

Photovoltaic devices using GaAs nanopillar radial p-n junctions are demonstrated by means of catalyst-free selective-area metal-organic chemical vapor deposition. Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at ±1 V). The absence of metal catalyst contamination results in leakage currents of ∼236 nA at -1 V. High-resolution scanning photocurrent microscopy measurements reveal the independent functioning of each nanowire in the array with an individual peak photocurrent of ∼1 nA at 544 nm. External quantum efficiency shows that the photocarrier extraction highly depends on the degenerately doped transparent contact oxide. Two different top electrode schemes are adopted and characterized in terms of Hall, sheet resistance, and optical transmittance measurements.

Selective Area Growth of GaAs on Si Patterned Using Nanoimprint Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Makoutz, Emily A.; Horowitz, Kelsey A. W.

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. For photovoltaic applications, the cost of patterning and growth, as well as the impact on the performance of the Si bottom cell must be considered. We present preliminary results on the use of soft nanoimprint lithography (SNIL) to create patternedmore » nucleation templates for the heteroepitaxial SAG of GaAs on Si. We demonstrate that SNIL patterning of passivating layers on the Si substrate improves measured minority carrier properties relative to unprotected Si. Cost modeling of the SNIL process shows that adding a patterning step only adds a minor contribution to the overall cost of a tandem III-V/Si solar cell, and can enable significant savings if it enables thinner buffer layers.« less

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Goradia, Chandra; Thesling, William; Weinberg, Irving

1991-01-01

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Concentrating Solar Power Projects - Gujarat Solar One | Concentrating

Science.gov Websites

Solar Power | NREL Gujarat Solar One This page provides information on Gujarat Solar One, a configuration. Status Date: February 12, 2014 Project Overview Project Name: Gujarat Solar One Country: India

Structural concepts for large solar concentrators

NASA Technical Reports Server (NTRS)

Hedgepeth, John M.; Miller, Richard K.

1987-01-01

The Sunflower large solar concentrator, developed in the early 1970's, is a salient example of a high-efficiency concentrator. The newly emphasized needs for solar dynamic power on the Space Station and for large, lightweight thermal sources are outlined. Existing concepts for high efficiency reflector surfaces are examined with attention to accuracy needs for concentration rates of 1000 to 3000. Concepts using stiff reflector panels are deemed most likely to exhibit the long-term consistent accuracy necessary for low-orbit operation, particularly for the higher concentration ratios. Quantitative results are shown of the effects of surface errors for various concentration and focal-length diameter ratios. Cost effectiveness is discussed. Principal sources of high cost include the need for various dished panels for paraboloidal reflectors and the expense of ground testing and adjustment. A new configuration is presented addressing both problems, i.e., a deployable Pactruss backup structure with identical panels installed on the structure after deployment in space. Analytical results show that with reasonable pointing errors, this new concept is capable of concentration ratios greater than 2000.

High-Efficiency Solar Thermal Vacuum Demonstration Completed for Refractive Secondary Concentrator

NASA Technical Reports Server (NTRS)

Wong, Wayne A.

2001-01-01

Common to many of the space applications that utilize solar thermal energy--such as electric power conversion, thermal propulsion, and furnaces--is a need for highly efficient, solar concentration systems. An effort is underway at the NASA Glenn Research Center to develop the refractive secondary concentrator, which uses refraction and total internal reflection to efficiently concentrate and direct solar energy. When used in combination with advanced lightweight primary concentrators, the refractive secondary concentrator enables very high system concentration ratios (10,000 to 1) and very high temperatures (>2000 K). The innovative refractive secondary concentrator offers significant advantages over all other types of secondary concentrators. The refractive secondary offers the highest throughput efficiency, provides for flux tailoring, requires no active cooling, relaxes the pointing and tracking requirements of the primary concentrator, and enables very high system concentration ratios. This technology has broad applicability to any system that requires the conversion of solar energy to heat. Glenn initiated the development of the refractive secondary concentrator in support of Shooting Star, a solar thermal propulsion flight experiment, and continued the development in support of Space Solar Power.

Performance evaluation of the solar kinetics T-700 line concentrating solar collector

NASA Technical Reports Server (NTRS)

1981-01-01

A performance evaluation of the solar kinetics T-700 line concentrating solar collector is reported. Collector descriptions, summary, test conditions, test equipment, test requirements and procedures, and an analysis of the various tests performed are described.

Step tracking program for concentrator solar collectors

NASA Astrophysics Data System (ADS)

Ciobanu, D.; Jaliu, C.

2016-08-01

The increasing living standards in developed countries lead to increased energy consumption. The fossil fuel consumption and greenhouse gas effect that accompany the energy production can be reduced by using renewable energy. For instance, the solar thermal systems can be used in temperate climates to provide heating during the transient period or cooling during the warmer months. Most used solar thermal systems contain flat plate solar collectors. In order to provide the necessary energy for the house cooling system, the cooling machine uses a working fluid with a high temperature, which can be supplied by dish concentrator collectors. These collectors are continuously rotated towards sun by biaxial tracking systems, process that increases the consumed power. An algorithm for a step tracking program to be used in the orientation of parabolic dish concentrator collectors is proposed in the paper to reduce the consumed power due to actuation. The algorithm is exemplified on a case study: a dish concentrator collector to be implemented in Brasov, Romania, a location with the turbidity factor TR equal to 3. The size of the system is imposed by the environment, the diameter of the dish reflector being of 3 meters. By applying the proposed algorithm, 60 sub-programs are obtained for the step orientation of the parabolic dish collector over the year. Based on the results of the numerical simulations for the step orientation, the efficiency of the direct solar radiation capture on the receptor is up to 99%, while the energy consumption is reduced by almost 80% compared to the continuous actuation of the concentrator solar collector.

Concentrators Enhance Solar Power Systems

NASA Technical Reports Server (NTRS)

2013-01-01

"Right now, solar electric propulsion is being looked at very seriously," says Michael Piszczor, chief of the photovoltaic and power technologies branch at Glen Research Center. The reason, he explains, originates with a unique NASA mission from the late 1990s. In 1998, the Deep Space 1 spacecraft launched from Kennedy Space Center to test a dozen different space technologies, including SCARLET, or the Solar Concentrator Array with Refractive Linear Element Technology. As a solar array that focused sunlight on a smaller solar cell to generate electric power, SCARLET not only powered Deep Space 1 s instruments but also powered its ion engine, which propelled the spacecraft throughout its journey. Deep Space 1 was the first spacecraft powered by a refractive concentrator design like SCARLET, and also utilized multi-junction solar cells, or cells made of multiple layers of different materials. For the duration of its 38-month mission, SCARLET performed flawlessly, even as Deep Space 1 flew by Comet Borrelly and Asteroid Braille. "Everyone remembers the ion engine on Deep Space 1, but they tend to forget that the SCARLET array powered it," says Piszczor. "Not only did both technologies work as designed, but the synergy between the two, solar power and propulsion together, is really the important aspect of this technology demonstration mission. It was the first successful use of solar electric propulsion for primary propulsion." More than a decade later, NASA is keenly interested in using solar electric propulsion (SEP) for future space missions. A key issue is cost, and SEP has the potential to substantially reduce cost compared to conventional chemical propulsion technology. "SEP allows you to use spacecraft that are smaller, lighter, and less costly," says Piszczor. "Even though it might take longer to get somewhere using SEP, if you are willing to trade time for cost and smaller vehicles, it s a good trade." Potentially, SEP could be used on future science missions

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

NASA Technical Reports Server (NTRS)

Ko, K. Y.; Lagowski, J.; Gatos, H. C.

1989-01-01

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Concentrating Solar Power Projects in India | Concentrating Solar Power |

Science.gov Websites

;alphabetical by project name. You can browse a project profile by clicking on the project name. Abhijeet Solar Project ACME Solar Tower Dadri ISCC Plant Dhursar Diwakar Godawari Solar Project Gujarat Solar One KVK Energy Solar Project Megha Solar Plant National Solar Thermal Power Facility

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

Space station solar concentrator materials research

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.

1988-01-01

The Space Station will represent the first time that a solar dynamic power system will be used to generate electrical power in space. In a system such as this, sunlight is collected and focused by a solar concentrator onto the receiver of a heat engine which converts the energy into electricity. The concentrator must be capable of collecting and focusing as much of the incident sunlight as possible, and it must also withstand the atomic oxygen bombardment which occurs in low Earth orbit (LEO). This has led to the development of a system of thin film coatings applied to the concentrator facet surface in a chamber designed especially for this purpose. The system of thin film coatings employed gives both the necessary degree of reflectance and the required protection from the LEO atomic oxygen environment.

A Comparison Of A Solar Power Satellite Concept To A Concentrating Solar Power System

NASA Technical Reports Server (NTRS)

Smitherman, David V.

2013-01-01

A comparison is made of a Solar Power Satellite concept in geostationary Earth orbit to a Concentrating Solar Power system on the ground to analyze overall efficiencies of each infrastructure from solar radiance at 1 AU to conversion and transmission of electrical energy into the power grid on the Earth's surface. Each system is sized for a 1-gigawatt output to the power grid and then further analyzed to determine primary collector infrastructure areas. Findings indicate that even though the Solar Power Satellite concept has a higher end-to-end efficiency, that the combined space and ground collector infrastructure is still about the same size as a comparable Concentrating Solar Power system on the ground.

Sulfur doping of GaAs with (NH4)2Sx solution

NASA Astrophysics Data System (ADS)

Lee, Jong-Lam

1999-01-01

A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

Concentrated Solar Thermoelectric Power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Gang; Ren, Zhifeng

2015-07-09

The goal of this project is to demonstrate in the lab that solar thermoelectric generators (STEGs) can exceed 10% solar-to-electricity efficiency, and STEGs can be integrated with phase-change materials (PCM) for thermal storage, providing operation beyond daylight hours. This project achieved significant progress in many tasks necessary to achieving the overall project goals. An accurate Themoelectric Generator (TEG) model was developed, which included realistic treatment of contact materials, contact resistances and radiative losses. In terms of fabricating physical TEGs, high performance contact materials for skutterudite TE segments were developed, along with brazing and soldering methods to assemble segmented TEGs. Accuratemore » measurement systems for determining device performance (in addition to just TE material performance) were built for this project and used to characterize our TEGs. From the optical components’ side, a spectrally selective cermet surface was developed with high solar absorptance and low thermal emittance, with thermal stability at high temperature. A measurement technique was also developed to determine absorptance and total hemispherical emittance at high temperature, and was used to characterize the fabricated spectrally selective surfaces. In addition, a novel reflective cavity was designed to reduce radiative absorber losses and achieve high receiver efficiency at low concentration ratios. A prototype cavity demonstrated that large reductions in radiative losses were possible through this technique. For the overall concentrating STEG system, a number of devices were fabricated and tested in a custom built test platform to characterize their efficiency performance. Additionally, testing was performed with integration of PCM thermal storage, and the storage time of the lab scale system was evaluated. Our latest testing results showed a STEG efficiency of 9.6%, indicating promising potential for high performance concentrated STEGs.« less

Concentrating solar thermal power.

PubMed

Müller-Steinhagen, Hans

2013-08-13

In addition to wind and photovoltaic power, concentrating solar thermal power (CSP) will make a major contribution to electricity provision from renewable energies. Drawing on almost 30 years of operational experience in the multi-megawatt range, CSP is now a proven technology with a reliable cost and performance record. In conjunction with thermal energy storage, electricity can be provided according to demand. To date, solar thermal power plants with a total capacity of 1.3 GW are in operation worldwide, with an additional 2.3 GW under construction and 31.7 GW in advanced planning stage. Depending on the concentration factors, temperatures up to 1000°C can be reached to produce saturated or superheated steam for steam turbine cycles or compressed hot gas for gas turbine cycles. The heat rejected from these thermodynamic cycles can be used for sea water desalination, process heat and centralized provision of chilled water. While electricity generation from CSP plants is still more expensive than from wind turbines or photovoltaic panels, its independence from fluctuations and daily variation of wind speed and solar radiation provides it with a higher value. To become competitive with mid-load electricity from conventional power plants within the next 10-15 years, mass production of components, increased plant size and planning/operating experience will be accompanied by technological innovations. On 30 October 2009, a number of major industrial companies joined forces to establish the so-called DESERTEC Industry Initiative, which aims at providing by 2050 15 per cent of European electricity from renewable energy sources in North Africa, while at the same time securing energy, water, income and employment for this region. Solar thermal power plants are in the heart of this concept.

The backward ray tracing with effective solar brightness used to simulate the concentrated flux map of a solar tower concentrator

NASA Astrophysics Data System (ADS)

Guo, Minghuan; Sun, Feihu; Wang, Zhifeng

2017-06-01

The solar tower concentrator is mainly composed of the central receiver on the tower top and the heliostat field around the tower. The optical efficiencies of a solar tower concentrator are important to the whole thermal performance of the solar tower collector, and the aperture plane of a cavity receiver or the (inner or external) absorbing surface of any central receiver is a key interface of energy flux. So it is necessary to simulate and analyze the concentrated time-changing solar flux density distributions on the flat or curved receiving surface of the collector, with main optical errors considered. The transient concentrated solar flux on the receiving surface is the superimposition of the flux density distributions of all the normal working heliostats in the field. In this paper, we will mainly introduce a new backward ray tracing (BRT) method combined with the lumped effective solar cone, to simulate the flux density map on the receiving-surface. For BRT, bundles of rays are launched at the receiving-surface points of interest, strike directly on the valid cell centers among the uniformly sampled mirror cell centers in the mirror surface of the heliostats, and then direct to the effective solar cone around the incident sun beam direction after reflection. All the optical errors are convoluted into the effective solar cone. The brightness distribution of the effective solar cone is here supposed to be circular Gaussian type. The mirror curvature can be adequately formulated by certain number of local normal vectors at the mirror cell centers of a heliostat. The shading & blocking mirror region of a heliostat by neighbor heliostats and also the solar tower shading on the heliostat mirror are all computed on the flat-ground-plane platform, i.e., projecting the mirror contours and the envelope cylinder of the tower onto the horizontal ground plane along the sun-beam incident direction or along the reflection directions. If the shading projection of a sampled

Solar energy concentrator system for crystal growth and zone refining in space

NASA Technical Reports Server (NTRS)

Mcdermit, J. H.

1975-01-01

The technological feasibility of using solar concentrators for crystal growth and zone refining in space has been performed. Previous studies of space-deployed solar concentrators were reviewed for their applicability to materials processing and a new state-of-the-art concentrator-receiver radiation analysis was developed. The radiation analysis is in the form of a general purpose computer program. It was concluded from this effort that the technology for fabricating, orbiting and deploying large solar concentrators has been developed. It was also concluded that the technological feasibility of space processing materials in the focal region of a solar concentrator depends primarily on two factors: (1) the ability of a solar concentrator to provide sufficient thermal energy for the process and (2) the ability of a solar concentrator to provide a thermal environment that is conductive to the processes of interest. The analysis indicate that solar concentrators can satisfactorily provide both of these factors.

Foaming of aluminium-silicon alloy using concentrated solar energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cambronero, L.E.G.; Ruiz-Roman, J.M.; Canadas, I.

2010-06-15

Solar energy is used for the work reported here as a nonconventional heating system to produce aluminium foam from Al-Si alloy precursors produced by powder metallurgy. A commercial precursor in cylindrical bars enclosed in a stainless-steel mould was heated under concentrated solar radiation in a solar furnace with varied heating conditions (heating rate, time, and temperature). Concentrated solar energy close to 300 W/cm{sup 2} on the mould is high enough to achieve complete foaming after heating for only 200 s. Under these conditions, the density and pore distribution in the foam change depending on the solar heating parameters and mouldmore » design. (author)« less

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

DTIC Science & Technology

1992-12-01

AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

Concentration of solar radiation by white painted transparent plates.

PubMed

Smestad, G; Hamill, P

1982-04-01

A simple flat-plate solar concentrator is described in this paper. The device is composed of a white painted transparent plate with a photovoltaic cell fixed to an unpainted area on the bottom of the plate. Light scattering off the white material is either lost or directed to the solar cell. Experimental concentrations of up to 1.9 times the incident solar flux have been achieved using white clays. These values are close to those predicted by theory for the experimental parameters investigated. A theory of the device operation is developed. Using this theory suggestions are made for optimizing the concentrator system. For reasonable choices of cell and plate size and reflectivities of 80% concentrations of over 2x are possible. The concentrator has the advantage over other systems in that the concentration is independent of incidence angle and the concentrator is easy to produce. The device needs no tracking system and will concentrate on a cloudy day.

GaAs Computer Technology

DTIC Science & Technology

1992-01-07

AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

Concentrating Solar Power Projects - Morón | Concentrating Solar Power |

Science.gov Websites

, 2018 Project Overview Project Name: Morón Country: Spain Location: Morón de la Frontera (Seville ? Background Technology: Parabolic trough Status: Operational Country: Spain City: Morón de la Frontera Region NREL Morón This page provides information on Morón, a concentrating solar power (CSP) project

Adaptive sensor-based ultra-high accuracy solar concentrator tracker

NASA Astrophysics Data System (ADS)

Brinkley, Jordyn; Hassanzadeh, Ali

2017-09-01

Conventional solar trackers use information of the sun's position, either by direct sensing or by GPS. Our method uses the shading of the receiver. This, coupled with nonimaging optics design allows us to achieve ultra-high concentration. Incorporating a sensor based shadow tracking method with a two stage concentration solar hybrid parabolic trough allows the system to maintain high concentration with acute accuracy.

Offset truss hex solar concentrator

NASA Technical Reports Server (NTRS)

White, John E. (Inventor); Sturgis, James D. (Inventor); Erikson, Raymond J. (Inventor); Waligroski, Gregg A. (Inventor); Scott, Michael A. (Inventor)

1991-01-01

A solar energy concentrator system comprises an offset reflector structure made up of a plurality of solar energy reflector panel sections interconnected with one another to form a piecewise approximation of a portion of a (parabolic) surface of revolution rotated about a prescribed focal axis. Each panel section is comprised of a plurality of reflector facets whose reflective surfaces effectively focus reflected light to preselected surface portions of the interior sidewall of a cylindrically shaped solar energy receiver. The longitudinal axis of the receiver is tilted at an acute angle with respect to the optical axis such that the distribution of focussed solar energy over the interior surface of the solar engine is optimized for dynamic solar energy conversion. Each reflector panel section comprises a flat, hexagonally shaped truss support framework and a plurality of beam members interconnecting diametrically opposed corners of the hexagonal framework recessed within which a plurality of (spherically) contoured reflector facets is disposed. The depth of the framework and the beam members is greater than the thickness of a reflector facet such that a reflector facet may be tilted (for controlling the effective focus of its reflected light through the receiver aperture) without protruding from the panel section.

Solar concentrator advanced development project

NASA Technical Reports Server (NTRS)

Corrigan, Robert D.; Ehresman, Derik T.

1987-01-01

A solar dynamic concentrator design developed for use with a solar-thermodynamic power generation module intended for the Space Station is considered. The truss hexagonal panel reflector uses a modular design approach and is flexible in attainable flux profiles and assembly techniques. Preliminary structural, thermal, and optical analysis results are discussed. Accuracy of the surface reflectors should be within 5 mrad rms slope error, resulting in the need for close fabrication tolerances. Significant fabrication issues to be addressed include the facet reflective and protective coating processes and the surface specularity requirements.

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

A I-V analysis of irradiated Gallium Arsenide solar cells

NASA Technical Reports Server (NTRS)

Heulenberg, A.; Maurer, R. H.; Kinnison, J. D.

1991-01-01

A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

JEDI Concentrating Solar Power Model | Jobs and Economic Development Impact

Science.gov Websites

Economic Development Impacts (JEDI) Concentrating Solar Power Model allows users to estimate economic development impacts from concentrating solar power projects and includes default information that can be

Concentrating Solar Power Projects - ACME Solar Tower | Concentrating Solar

Science.gov Websites

: 2.5 MW Gross: 2.5 MW Status: Operational Start Year: 2011 Do you have more information, corrections Contact(s): SolarPACES Start Production: April 2011 Participants Developer(s): ACME Group ; eSolar Owner(s

NREL, Abengoa Making Concentrating Solar Power System Manufacturing More

Science.gov Websites

Cost Effective | Energy Systems Integration Facility | NREL Abengoa NREL, Abengoa Making Concentrating Solar Power System Manufacturing More Cost Effective Abengoa is working with NREL researchers to develop a new and more cost-effective manufacturing process for critical components of concentrating solar

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Hybrid photovoltaic and thermoelectric module for high concentration solar system

NASA Astrophysics Data System (ADS)

Tamaki, Ryo; Toyoda, Takeshi; Tamura, Yoichi; Matoba, Akinari; Minamikawa, Toshiharu; Tokuda, Masayuki; Masui, Megumi; Okada, Yoshitaka

2017-09-01

A photovoltaic (PV) and thermoelectric (TE) hybrid module was developed for application to high concentration solar systems. The waste heat from the solar cells under concentrated light illumination was utilized to generate additional electricity by assembling TE devices below the multi-junction solar cells (MJSCs). Considering the high operating temperature of the PV and TE hybrid module compared with conventional concentrator PV modules, the TE device could compensate a part of the MJSC efficiency degradation at high temperature. The performance investigation clarified the feasibility of the hybrid PV and TE module under highly concentrated sunlight illumination.

Fundamentals and techniques of nonimaging optics for solar energy concentration

NASA Astrophysics Data System (ADS)

Winston, R.; Ogallaher, J. J.

1980-09-01

Recent progress in basic research into the theoretical understanding of nonimaging optical systems and their application to the design of practical solar concentration was reviewed. Work was done to extend the previously developed geometrical vector flux formalism with the goal of applying it to the analysis of nonideal concentrators. Both phase space and vector flux representation for traditional concentrators were generated. Understanding of the thermodynamically derived relationship between concentration and cavity effects led to the design of new lossless and low loss concentrators for absorbers with gaps. Quantitative measurements of the response of real collector systems and the distribution of diffuse insolation shows that in most cases performance exceeds predictions in solar applications. These developments led to improved nonimaging solar concentrator designs and applications.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Micro Solar Cells with Concentration and Light Trapping Optics

NASA Astrophysics Data System (ADS)

Li, Lanfang; Breuckner, Eric; Corcoran, Christopher; Yao, Yuan; Xu, Lu; Nuzzo, Ralph

2013-03-01

Compared with conventional bulk plate semiconductor solar cells, micro solar cells provide opportunity for novel design geometry and provide test bed for light trapping at the device level as well as module level. Surface recombination, however, will have to be addressed properly as the much increased surface area due to the reduced dimension is more prominent in these devices than conventional solar cells. In this poster, we present experimental demonstration of silicon micro solar cells with concentration and light trapping optics. Silicon micro solar cell with optimized surface passivation and doping profile that exhibit high efficiency is demonstrated. Effective incorporation of high quantum yield fluorescent centers in the polymer matrix into which micro solar cell was encapsulated was investigated for luminescent solar concentration application. Micro-cell on a semi-transparent, nanopatterned reflector formed by soft-imprint lithography was investigated for near field effect related solar conversion performance enhancement. This work is supported by the DOE `Light-Material Interactions in Energy Conversion' Energy Frontier Research Center under grant DE-SC0001293

Multiple-Panel Cylindrical Solar Concentrator

NASA Technical Reports Server (NTRS)

Brown, E. M.

1983-01-01

Trough composed of many panels concentrates Sun's energy on solar cells, even when trough is not pointed directly at Sun. Tolerates deviation as great as 5 degrees from direction of sun. For terrestrial applications, multiple-flat-plate design offers potential cost reduction and ease of fabrication.

Concentrating Solar Power Projects - Kathu Solar Park | Concentrating Solar

Science.gov Websites

): Eskom Plant Configuration Solar Field Heat-Transfer Fluid Type: Thermal oil Solar-Field Inlet Temp: 293Â (Net): 100.0 MW Output Type: Steam Rankine Thermal Storage Storage Type: 2-tank indirect Storage Capacity: 4.5 hours Thermal Storage Description: Molten salt

Improving solar-pumped laser efficiency by a ring-array concentrator

NASA Astrophysics Data System (ADS)

Tibúrcio, Bruno D.; Liang, Dawei; Almeida, Joana; Matos, Rodrigo; Vistas, Cláudia R.

2018-01-01

We report here a compact pumping scheme for achieving large improvement in collection and conversion efficiency of a Nd:YAG solar-pumped laser by an innovative ring-array solar concentrator. An aspheric fused silica lens was used to further concentrate the solar radiation from the focal region of the 1.5-m-diameter ring-array concentrator to a 5.0-mm-diameter, 20-mm-length Nd:YAG single-crystal rod within a conical-shaped pump cavity, enabling multipass pumping to the laser rod. 67.3-W continuous-wave solar laser power was numerically calculated, corresponding to 38.2-W / m2 solar laser collection efficiency, being 1.22 and 1.27 times more than the state-of-the-art records by both heliostat-parabolic mirror and Fresnel lens solar laser systems, respectively. 4.0% conversion efficiency and 0.021-W brightness figure of merit were also numerically obtained, corresponding to 1.25 and 1.62 times enhancement over the previous records, respectively. The influence of tracking error on solar laser output power was also analyzed.

Compact, semi-passive beam steering prism array for solar concentrators.

PubMed

Zheng, Cheng; Li, Qiyuan; Rosengarten, Gary; Hawkes, Evatt; Taylor, Robert A

2017-05-10

In order to maximize solar energy utilization in a limited space (e.g., rooftops), solar collectors should track the sun. As an alternative to rotational tracking systems, this paper presents a compact, semi-passive beam steering prism array which has been designed, analyzed, and tested for solar applications. The proposed prism array enables a linear concentrator system to remain stationary so that it can integrate with a variety of different solar concentrators, and which should be particularly useful for systems which require a low profile (namely rooftop-mounted systems). A case study of this prism array working within a specific rooftop solar collector demonstrates that it can boost the average daily optical efficiency of the collector by 32.7% and expand its effective working time from 6 h to 7.33 h. Overall, the proposed design provides an alternative way to "follow" the sun for a wide range of solar thermal and photovoltaic concentrator systems.

Prediction Of Critical Crack Sizes In Solar Cells

NASA Technical Reports Server (NTRS)

Chen, Chern P.

1989-01-01

Report presents theoretical analysis of cracking in Si and GaAs solar photovoltaic cells subjected to bending or twisting. Analysis also extended to predict critical sizes for cracks in Ge substrate coated with thin film of GaAs. Analysis leads to general conclusions. Approach and results of study useful in development of guidelines for acceptance or rejection of slightly flawed cells during manufacture.

High efficiency solar cells for concentrator systems: silicon or multi-junction?

NASA Astrophysics Data System (ADS)

Slade, Alexander; Stone, Kenneth W.; Gordon, Robert; Garboushian, Vahan

2005-08-01

Amonix has become the first company to begin production of high concentration silicon solar cells where volumes are over 10 MW/year. Higher volumes are available due to the method of manufacture; Amonix solely uses semiconductor foundries for solar cell production. In the previous years of system and cell field testing, this method of manufacturing enabled Amonix to maintain a very low overhead while incurring a high cost for the solar cell. However, recent simplifications to the solar cell processing sequence resulted in cost reduction and increased yield. This new process has been tested by producing small qualities in very short time periods, enabling a simulation of high volume production. Results have included over 90% wafer yield, up to 100% die yield and world record performance (η =27.3%). This reduction in silicon solar cell cost has increased the required efficiency for multi-junction concentrator solar cells to be competitive / advantageous. Concentrator systems are emerging as a low-cost, high volume option for solar-generated electricity due to the very high utilization of the solar cell, leading to a much lower $/Watt cost of a photovoltaic system. Parallel to this is the onset of alternative solar cell technologies, such as the very high efficiency multi-junction solar cells developed at NREL over the last two decades. The relatively high cost of these type of solar cells has relegated their use to non-terrestrial applications. However, recent advancements in both multi-junction concentrator cell efficiency and their stability under high flux densities has made their large-scale terrestrial deployment significantly more viable. This paper presents Amonix's experience and testing results of both high-efficiency silicon rear-junction solar cells and multi-junction solar cells made for concentrated light operation.

Installation package for concentrating solar collector panels

NASA Technical Reports Server (NTRS)

1978-01-01

The concentrating solar collector panels comprise a complete package array consisting of collector panels using modified Fresnel prismatic lenses for a 10 to 1 concentrating ratio, supporting framework, fluid manifolding and tracking drive system, and unassembled components for field erection.

Concentration of sunlight to solar-surface levels using non-imaging optics

NASA Astrophysics Data System (ADS)

Gleckman, Philip; O'Gallagher, Joseph; Winston, Roland

1989-05-01

An account is given of the design and operational principles of a solar concentrator that employs nonimaging optics to achieve a solar flux equal to 56,000 times that of ambient sunlight, yielding temperatures comparable to, and with further development of the device, exceeding those of the solar surface. In this scheme, a parabolic mirror primary concentrator is followed by a secondary concentrator, designed according to the edge-ray method, which is filled with a transparent oil. The device may be used in materials-processing, waste-disposal, and solar-pumped laser applications.

Optical and mechanical tolerances in hybrid concentrated thermal-PV solar trough.

PubMed

Diaz, Liliana Ruiz; Cocilovo, Byron; Miles, Alexander; Pan, Wei; Blanche, Pierre-Alexandre; Norwood, Robert A

2018-05-14

Hybrid thermal-PV solar trough collectors combine concentrated photovoltaics and concentrated solar power technology to harvest and store solar energy. In this work, the optical and mechanical requirements for optimal efficiency are analyzed using non-sequential ray tracing techniques. The results are used to generate opto-mechanical tolerances that can be compared to those of traditional solar collectors. We also explore ideas on how to relieve tracking tolerances for single-axis solar collectors. The objective is to establish a basis for tolerances required for the fabrication and manufacturing of hybrid solar trough collectors.

Concentrating Solar Power Projects - Lake Cargelligo | Concentrating Solar

Science.gov Websites

Solar Storage Receiver, set out in a multi tower solar array. The Project consists of eight SSR's each mounted on its own tower. This graphite receiver acts as receiver, boiler and storage system. Status Date Manufacturer: Lloyd Energy Systems Pty Ltd Receiver Type: Graphite solar storage receiver Heat-Transfer Fluid

Scattering Solar Thermal Concentrators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giebink, Noel C.

2015-01-31

This program set out to explore a scattering-based approach to concentrate sunlight with the aim of improving collector field reliability and of eliminating wind loading and gross mechanical movement through the use of a stationary collection optic. The approach is based on scattering sunlight from the focal point of a fixed collection optic into the confined modes of a sliding planar waveguide, where it is transported to stationary tubular heat transfer elements located at the edges. Optical design for the first stage of solar concentration, which entails focusing sunlight within a plane over a wide range of incidence angles (>120more » degree full field of view) at fixed tilt, led to the development of a new, folded-path collection optic that dramatically out-performs the current state-of-the-art in scattering concentration. Rigorous optical simulation and experimental testing of this collection optic have validated its performance. In the course of this work, we also identified an opportunity for concentrating photovoltaics involving the use of high efficiency microcells made in collaboration with partners at the University of Illinois. This opportunity exploited the same collection optic design as used for the scattering solar thermal concentrator and was therefore pursued in parallel. This system was experimentally demonstrated to achieve >200x optical concentration with >70% optical efficiency over a full day by tracking with <1 cm of lateral movement at fixed latitude tilt. The entire scattering concentrator waveguide optical system has been simulated, tested, and assembled at small scale to verify ray tracing models. These models were subsequently used to predict the full system optical performance at larger, deployment scale ranging up to >1 meter aperture width. Simulations at an aperture widths less than approximately 0.5 m with geometric gains ~100x predict an overall optical efficiency in the range 60-70% for angles up to 50 degrees from normal

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chavanapranee, Tosaporn; Horikoshi, Yoshiji

The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1984-01-01

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Refractive Secondary Solar Concentrator Being Designed and Developed

NASA Technical Reports Server (NTRS)

Macosko, Robert P.; Donovan, Richard M.

1998-01-01

As the need for achieving super high temperatures (2000 K and above) in solar heat receivers has developed so has the need for secondary concentrators. These concentrators refocus the already highly concentrated solar energy provided by a primary solar collector, thereby significantly reducing the light entrance aperture of the heat receiver and the resulting infrared radiation heat loss from the receiver cavity. Although a significant amount of research and development has been done on nonimaging hollow reflective concentrators, there has been no other research or development to date on solid, single crystal, refractive concentrators that can operate at temperatures above 2000 K. The NASA Lewis Research Center recently initiated the development of single-crystal, optically clear, refractive secondary concentrators that, combined with a flux extractor, offer a number of significant advantages over the more conventional, hollow, reflective concentrators at elevated temperatures. Such concentrators could potentially provide higher throughput (efficiency), require no special cooling device, block heat receiver material boiloff from the receiver cavity, provide for flux tailoring in the cavity via the extractor, and potentially reduce infrared heat loss via an infrared block coating.The many technical challenges of designing and fabricating high-temperature refractive secondary concentrators and flux extractors include identifying optical materials that can survive the environment (high-temperature, vacuum and/or hydrogen atmosphere), developing coatings for enhanced optical and thermal performance, and developing crystal joining techniques and hardware that can survive launch loads.

Gallium arsenide solar cells-status and prospects for use in space

NASA Technical Reports Server (NTRS)

Brandhorst, H. W.; Flood, D.; Weinberg, I.

1981-01-01

Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

Solar concentrator materials development

NASA Technical Reports Server (NTRS)

Morel, D. E.; Ayers, S. R.; Gulino, D. A.; Tennyson, R. C.; Egger, R. A.

1986-01-01

Materials with potential applications in reflective and refractive solar dynamic concentrators are tested for resistance to atomic oxygen degradation. It is found that inorganic coatings such as MgF2, SiO(x), and ITO provide excellent protection for reflective surfaces while organic materials are much more susceptible to erosion and mass loss. Of the organic polymers tested, the silicones have the highest intrinsic resistance to atomic oxygen degradation.

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Concentrating Solar Power Projects - Planta Solar 20 | Concentrating Solar

Science.gov Websites

(CSP) project, with data organized by background, participants, and power plant configuration. Abengoa Solar's Planta Solar 20 (PS20) is a 20-megawatt power tower plant being constructed next to the PS10 tower percent. The 160-meter tower was designed to reduce the visual impact of its height. The plant has the

Luminescent Solar Concentrator Daylighting

NASA Astrophysics Data System (ADS)

Bornstein, Jonathan G.

1984-11-01

Various systems that offer potential solutions to the problem of interior daylighting have been discussed in the literature. Virtually all of these systems rely on some method of tracking the sun along its azimuth and elevation, i.e., direct imaging of the solar disk. A simpler approach, however, involves a nontracking nonimaging device that effectively eliminates moving parts and accepts both the diffuse and direct components of solar radiation. Such an approach is based on a system that combines in a common luminaire the light emitted by luminescent solar concentrators (LSC), of the three primary colors, with a highly efficient artificial point source (HID metal halide) that automatically compensates for fluctuations in the LSC array via a daylight sensor and dimming ballast. A preliminary analysis suggests that this system could supply 90% of the lighting requirement, over the course of an 8 hour day, strictly from the daylight component under typical insolation con-ditions in the Southwest United States. In office buildings alone, the total aggregate energy savings may approach a half a quad annually. This indicates a very good potential for the realization of substantial savings in building electric energy consumption.

Surface modification technologies using concentrated solar radiation

NASA Astrophysics Data System (ADS)

Pitts, J. Roland; Stanley, J. T.; Tracy, Ed; Fields, C. L.

Research conducted at the Solar Energy Research Institute (SERI) during the past three years addressed a number of the critical areas and has explored the possibility of using highly concentrated solar radiation to induce beneficial surface transformation. The principal goal is to develop new coatings and processes that improve the performance and lifetime of materials at reduced processing costs. Highly concentrated radiant energy provides a controllable means of delivering large flux densities to solid surfaces, where the resulting thermal energy can cause phase changes, atomic migrations, and chemical reactions on a surface without greatly perturbing the bulk properties; alternatively, the photons may directly interact with species on the surface. These changes may result in improved properties of the materials by making the surface harder, more resistant to corrosion or wear, thermally resistant, or with lower coefficients of friction. In a solar furnace, this flux can be delivered in large quantities over large areas, or it can be tailored to match the demands of a particular process. Furthermore, this occurs without the environmental liability associated with providing power to more conventional light sources. Recent work at SERI has used fluxes in the range from 100 to 250 w/sq cm for inducing such beneficial surface transformations. Significant results have been obtained in the area of phase transformation hardening of steels and melting powders and preapplied coatings to form fully dense, well-bonded coatings on the surface. New directions in coating technology using highly concentrated solar beams to induce chemical vapor deposition processes are described. Application areas that have not been researched in detail but would appear to be good matches to the solar technology are also reviewed.

Stationary nonimaging lenses for solar concentration.

PubMed

Kotsidas, Panagiotis; Chatzi, Eleni; Modi, Vijay

2010-09-20

A novel approach for the design of refractive lenses is presented, where the lens is mounted on a stationary aperture and the Sun is tracked by a moving solar cell. The purpose of this work is to design a quasi-stationary concentrator by replacing the two-axis tracking of the Sun with internal motion of the miniaturized solar cell inside the module. Families of lenses are designed with a variation of the simultaneous multiple surface technique in which the sawtooth genetic algorithm is implemented to optimize the geometric variables of the optic in order to produce high fluxes for a range of incidence angles. Finally, we show examples of the technique for lenses with 60° and 30° acceptance half-angles, with low to medium attainable concentrations.

Japan's participation in space station design: Feasibility study of GaAs solar cells for space station applications

NASA Technical Reports Server (NTRS)

1986-01-01

The report gives the results of feasibility studies and a cost analysis done on GaAs solar battery cells for space stations. The studies and their results are as follows: (1) Cell size - The 2 x 4 cm cell size was found superior to the 4 x 4 cm cell; (2) Manufacturing technology - Overall, LPE crystal growth was found more suitable than MO-CVD. Current technology for post-growth processes and applying large-area cover glass can be used with few or no modifications; (3) Cell assemblies - Tests for mechanical and thermal stresses encountered from assembly through operation are recommended; (4) Procuring materials - Steps should be taken to avoid sharp price increases due to a speculative gallium market. There are no problems with arsenic materials; (5) Production facilities - The capital investment needed remains to be determined, but a working area of 4000 m2 will be required; (6) Cell costs to be determined; (7) Cell development-supply plan - Two-year lead time will be needed to develop the necessary technology and prepare for production.

Low concentration ratio solar array structural configuration

NASA Astrophysics Data System (ADS)

Nalbandian, S. J.

1984-01-01

The design and structural properties of a low concentration ratio solar array are discussed. The assembled module consists of six interconnected containers which are compactly stowed in a volume of 3.24 m(3) for delivery to orbit by the shuttle. The containers deploy in accordian fashion into a rectangular area of 19.4 x 68 meters and can be attached to the user spacecraft along the longitudinal centerline of the end container housing. Five rotary incremental actuators requiring about 8 watts each will execute the 180-degree rotation at each joint. Deployable masts (three per side) are used to extend endcaps from the housing in both directions. Each direction is extended by three masts requiring about 780 watts for about 27 minutes. Concentrator elements are extended by the endcaps and are supported by cable systems that are connected between the housings and endcaps. These power generating elements contain reflector panels which concentrate light onto the solar panels consisting of an aluminum radiator with solar cells positioned within the element base formed by the reflectors. A flat wire harness collects the power output of individual elements for transfer to the module container housing harnesses.

High Voltage Solar Concentrator Experiment with Implications for Future Space Missions

NASA Technical Reports Server (NTRS)

Mehdi, Ishaque S.; George, Patrick J.; O'Neill, Mark; Matson, Robert; Brockschmidt, Arthur

2004-01-01

This paper describes the design, development, fabrication, and test of a high performance, high voltage solar concentrator array. This assembly is believed to be the first ever terrestrial triple-junction-cell solar array rated at over 1 kW. The concentrator provides over 200 W/square meter power output at a nominal 600 Vdc while operating under terrestrial sunlight. Space-quality materials and fabrication techniques were used for the array, and the 3005 meter elevation installation below the Tropic of Cancer allowed testing as close as possible to space deployment without an actual launch. The array includes two concentrator modules, each with a 3 square meter aperture area. Each concentrator module uses a linear Fresnel lens to focus sunlight onto a photovoltaic receiver that uses 240 series-connected triple-junction solar cells. Operation of the two receivers in series can provide 1200 Vdc which would be adequate for the 'direct drive' of some ion engines or microwave transmitters in space. Lens aperture width is 84 cm and the cell active width is 3.2 cm, corresponding to a geometric concentration ratio of 26X. The evaluation includes the concentrator modules, the solar cells, and the materials and techniques used to attach the solar cells to the receiver heat sink. For terrestrial applications, a finned aluminum extrusion was used for the heat sink for the solar cells, maintaining a low cell temperature so that solar cell efficiency remains high.

Production of fullerenes with concentrated solar flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hale, M. J.; Fields, C.; Lewandowski, A.

1994-01-01

Research at the National Renewable Energy Laboratory (NREL) has demonstrated that fullerenes can be produced using highly concentrated sunlight from a solar furnace. Since they were first synthesized in 1989, fullerenes have been the subject of intense research. They show considerable commercial potential in advanced materials and have potential applications that include semiconductors, superconductors, high-performance metals, and medical technologies. The most common fullerene is C{sub 60}, which is a molecule with a geometry resembling a soccer ball. Graphite vaporization methods such as pulsed-laser vaporization, resistive heating, and carbon arc have been used to produce fullerenes. None of these, however, seemsmore » capable of producing fullerenes economically on a large scale. The use of concentrated sunlight may help avoid the scale-up limitations inherent in more established production processes. Recently, researchers at NREL made fullerenes in NREL`s 10 kW High Flux Solar Furnace (HFSF) with a vacuum reaction chamber designed to deliver a solar flux of 1200 W/cm{sup 2} to a graphite pellet. Analysis of the resulting carbon soot by mass spectrometry and high-pressure liquid chromatography confirmed the existence of fullerenes. These results are very encouraging and we are optimistic that concentrated solar flux can provide a means for large-scale, economical production of fullerenes. This paper presents our method, experimental apparatus, and results of fullerene production research performed with the HFSF.« less

A space-based combined thermophotovoltaic electric generator and gas laser solar energy conversion system

NASA Technical Reports Server (NTRS)

Yesil, Oktay

1989-01-01

This paper describes a spaceborne energy conversion system consisting of a thermophotovoltaic electric generator and a gas laser. As a power source for the converson, the system utilizes an intermediate blackbody cavity heated to a temperature of 2000-2400 K by concentrated solar radiation. A double-layer solar cell of GaAs and Si forms a cylindrical surface concentric to this blackbody cavity, receiving the blackbody radiation and converting it into electricity with cell conversion efficiency of 50 percent or more. If the blackbody cavity encloses a laser medium, the blackbody radiation can also be used to simultaneously pump a lasing gas. The feasibility of blackbody optical pumping at 4.3 microns in a CO2-He gas mixture was experimentally demonstrated.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Concentrating light in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Schmid, M.; Yin, G.; Song, M.; Duan, S.; Heidmann, B.; Sancho-Martinez, D.; Kämmer, S.; Köhler, T.; Manley, P.; Lux-Steiner, M. Ch.

2016-09-01

Light concentration has proven beneficial for solar cells, most notably for highly efficient but expensive absorber materials using high concentrations and large scale optics. Here we investigate light concentration for cost efficient thinfilm solar cells which show nano- or microtextured absorbers. Our absorber material of choice is Cu(In,Ga)Se2 (CIGSe) which has a proven stabilized record efficiency of 22.6% and which - despite being a polycrystalline thin-film material - is very tolerant to environmental influences. Taking a nanoscale approach, we concentrate light in the CIGSe absorber layer by integrating photonic nanostructures made from dielectric materials. The dielectric nanostructures give rise to resonant modes and field localization in their vicinity. Thus when inserted inside or adjacent to the absorber layer, absorption and efficiency enhancement are observed. In contrast to this internal absorption enhancement, external enhancement is exploited in the microscale approach: mm-sized lenses can be used to concentrate light onto CIGSe solar cells with lateral dimensions reduced down to the micrometer range. These micro solar cells come with the benefit of improved heat dissipation compared to the large scale concentrators and promise compact high efficiency devices. Both approaches of light concentration allow for reduction in material consumption by restricting the absorber dimension either vertically (ultra-thin absorbers for dielectric nanostructures) or horizontally (micro absorbers for concentrating lenses) and have significant potential for efficiency enhancement.

Concentrating light in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Schmid, Martina; Yin, Guanchao; Song, Min; Duan, Shengkai; Heidmann, Berit; Sancho-Martinez, Diego; Kämmer, Steven; Köhler, Tristan; Manley, Phillip; Lux-Steiner, Martha Ch.

2017-01-01

Light concentration has proven beneficial for solar cells, most notably for highly efficient but expensive absorber materials using high concentrations and large scale optics. Here, we investigate the light concentration for cost-efficient thin-film solar cells that show nano- or microtextured absorbers. Our absorber material of choice is Cu(In,Ga)Se2 (CIGSe), which has a proven stabilized record efficiency of 22.6% and which-despite being a polycrystalline thin-film material-is very tolerant to environmental influences. Taking a nanoscale approach, we concentrate light in the CIGSe absorber layer by integrating photonic nanostructures made from dielectric materials. The dielectric nanostructures give rise to resonant modes and field localization in their vicinity. Thus, when inserted inside or adjacent to the absorber layer, absorption and efficiency enhancement are observed. In contrast to this internal absorption enhancement, external enhancement is exploited in the microscaled approach: mm-sized lenses can be used to concentrate light onto CIGSe solar cells with lateral dimensions reduced down to the micrometer range. These micro solar cells come with the benefit of improved heat dissipation compared with the large scale concentrators and promise compact high-efficiency devices. Both approaches of light concentration allow for reduction in material consumption by restricting the absorber dimension either vertically (ultrathin absorbers for dielectric nanostructures) or horizontally (microabsorbers for concentrating lenses) and have significant potential for efficiency enhancement.

Experimental Analysis of Desalination Unit Coupled with Solar Water Lens Concentrator

NASA Astrophysics Data System (ADS)

Chaithanya, K. K.; Rajesh, V. R.; Suresh, Rahul

2016-09-01

The main problem that the world faces in this scenario is shortage of potable water. Hence this research work rivets to increase the yield of desalination system in an economical way. The integration of solar concentrator and desalination unit can project the desired yield, but the commercially available concentrated solar power technologies (CSP) are not economically viable. So this study proposes a novel method to concentrate ample amount of solar radiation in a cost effective way. Water acting as lens is a highlighted technology initiated in this work, which can be a substitute for CSP systems. And water lens can accelerate the desalination process so as to increase the yield economically. The solar irradiance passing through the water will be concentrated at a focal point, and the concentration depends on curvature of water lens. The experimental analysis of water lens makes use of transparent thin sheet, supported on a metallic structure. The Plano convex shape of water lens is developed by varying the volume of water that is being poured on the transparent thin sheet. From the experimental analysis it is inferred that, as the curvature of water lens increases, solar irradiance can be focused more accurately on to the focus and a higher water temperature is obtained inside the solar still.

Advanced solar concentrator mass production, operation, and maintenance cost assessment

NASA Technical Reports Server (NTRS)

Niemeyer, W. A.; Bedard, R. J.; Bell, D. M.

1981-01-01

The object of this assessment was to estimate the costs of the preliminary design at: production rates of 100 to 1,000,000 concentrators per year; concentrators per aperture diameters of 5, 10, 11, and 15 meters; and various receiver/power conversion package weights. The design of the cellular glass substrate Advanced Solar Concentrator is presented. The concentrator is an 11 meter diameter, two axis tracking, parabolic dish solar concentrator. The reflective surface of this design consists of inner and outer groups of mirror glass/cellular glass gores.

Instrumentation for accelerated life tests of concentrator solar cells.

PubMed

Núñez, N; Vázquez, M; González, J R; Jiménez, F J; Bautista, J

2011-02-01

Concentrator photovoltaic is an emergent technology that may be a good economical and efficient alternative for the generation of electricity at a competitive cost. However, the reliability of these new solar cells and systems is still an open issue due to the high-irradiation level they are subjected to as well as the electrical and thermal stresses that they are expected to endure. To evaluate the reliability in a short period of time, accelerated aging tests are essential. Thermal aging tests for concentrator photovoltaic solar cells and systems under illumination are not available because no technical solution to the problem of reaching the working concentration inside a climatic chamber has been available. This work presents an automatic instrumentation system that overcomes the aforementioned limitation. Working conditions have been simulated by forward biasing the solar cells to the current they would handle at the working concentration (in this case, 700 and 1050 times the irradiance at one standard sun). The instrumentation system has been deployed for more than 10 000 h in a thermal aging test for III-V concentrator solar cells, in which the generated power evolution at different temperatures has been monitored. As a result of this test, the acceleration factor has been calculated, thus allowing for the degradation evolution at any temperature in addition to normal working conditions to be obtained.

Review of avian mortality studies at concentrating solar power plants

NASA Astrophysics Data System (ADS)

Ho, Clifford K.

2016-05-01

This paper reviews past and current avian mortality studies at concentrating solar power (CSP) plants and facilities including Solar One in California, the Solar Energy Development Center in Israel, Ivanpah Solar Electric Generating System in California, Crescent Dunes in Nevada, and Gemasolar in Spain. Findings indicate that the leading causes of bird deaths at CSP plants are from collisions (primarily with reflective surfaces; i.e., heliostats) and singeing caused by concentrated solar flux. Safe irradiance levels for birds have been reported to range between 4 and 50 kW/m2. Above these levels, singeing and irreversible damage to the feathers can occur. Despite observations of large numbers of "streamers" in concentrated flux regions and reports that suggest these streamers indicate complete vaporization of birds, analyses in this paper show that complete vaporization of birds is highly improbable, and the observed streamers are likely due to insects flying into the concentrated flux. The levelized avian mortality rate during the first year of operation at Ivanpah was estimated to be 0.7 - 3.5 fatalities per GWh, which is less than the levelized avian mortality reported for fossil fuel plants but greater than that for nuclear and wind power plants. Mitigation measures include acoustic, visual, tactile, and chemosensory deterrents to keep birds away from the plant, and heliostat aiming strategies that reduce the solar flux during standby.

Simple Köhler homogenizers for image-forming solar concentrators

NASA Astrophysics Data System (ADS)

Zhang, Weiya; Winston, Roland

2010-08-01

By adding simple Köhler homogenizers in the form of aspheric lenses generated with an optimization approach, we solve the problems of non-uniform irradiance distribution and non-square irradiance pattern existing in some image-forming solar concentrators. The homogenizers do not require optical bonding to the solar cells or total internal reflection surface. Two examples are shown including a Fresnel lens based concentrator and a two-mirror aplanatic system.

Thermodynamic efficiency of solar concentrators.

PubMed

Shatz, Narkis; Bortz, John; Winston, Roland

2010-04-26

The optical thermodynamic efficiency is a comprehensive metric that takes into account all loss mechanisms associated with transferring flux from the source to the target phase space, which may include losses due to inadequate design, non-ideal materials, fabrication errors, and less than maximal concentration. We discuss consequences of Fermat's principle of geometrical optics and review étendue dilution and optical loss mechanisms associated with nonimaging concentrators. We develop an expression for the optical thermodynamic efficiency which combines the first and second laws of thermodynamics. As such, this metric is a gold standard for evaluating the performance of nonimaging concentrators. We provide examples illustrating the use of this new metric for concentrating photovoltaic systems for solar power applications, and in particular show how skewness mismatch limits the attainable optical thermodynamic efficiency.

Photovoltaic solar concentrator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat

A process including forming a photovoltaic solar cell on a substrate, the photovoltaic solar cell comprising an anchor positioned between the photovoltaic solar cell and the substrate to suspend the photovoltaic solar cell from the substrate. A surface of the photovoltaic solar cell opposite the substrate is attached to a receiving substrate. The receiving substrate may be bonded to the photovoltaic solar cell using an adhesive force or a metal connecting member. The photovoltaic solar cell is then detached from the substrate by lifting the receiving substrate having the photovoltaic solar cell attached thereto and severing the anchor connecting themore » photovoltaic solar cell to the substrate. Depending upon the type of receiving substrate used, the photovoltaic solar cell may be removed from the receiving substrate or remain on the receiving substrate for use in the final product.« less

LEC GaAs for integrated circuit applications

NASA Technical Reports Server (NTRS)

Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

1984-01-01

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Optofluidic solar concentrators using electrowetting tracking: Concept, design, and characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, JT; Park, S; Chen, CL

2013-03-01

We introduce a novel optofluidic solar concentration system based on electrowetting tracking. With two immiscible fluids in a transparent cell, we can actively control the orientation of fluid fluid interface via electrowetting. The naturally-formed meniscus between the two liquids can function as a dynamic optical prism for solar tracking and sunlight steering. An integrated optofluidic solar concentrator can be constructed from the liquid prism tracker in combination with a fixed and static optical condenser (Fresnel lens). Therefore, the liquid prisms can adaptively focus sunlight on a concentrating photovoltaic (CPV) cell sitting on the focus of the Fresnel lens as themore » sun moves. Because of the unique design, electrowetting tracking allows the concentrator to adaptively track both the daily and seasonal changes of the sun's orbit (dual-axis tracking) without bulky, expensive and inefficient mechanical moving parts. This approach can potentially reduce capital costs for CPV and increases operational efficiency by eliminating the power consumption of mechanical tracking. Importantly, the elimination of bulky tracking hardware and quiet operation will allow extensive residential deployment of concentrated solar power. In comparison with traditional silicon-based photovoltaic (PV) solar cells, the electrowetting-based self-tracking technology will generate,similar to 70% more green energy with a 50% cost reduction. (C) 2013 Elsevier Ltd. All rights reserved.« less

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.

1981-01-01

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Energy analysis of holographic lenses for solar concentration

NASA Astrophysics Data System (ADS)

Marín-Sáez, Julia; Collados, M. Victoria; Chemisana, Daniel; Atencia, Jesús

2017-05-01

The use of volume and phase holographic elements in the design of photovoltaic solar concentrators has become very popular as an alternative solution to refractive systems, due to their high efficiency, low cost and possibilities of building integration. Angular and chromatic selectivity of volume holograms can affect their behavior as solar concentrators. In holographic lenses, angular and chromatic selectivity varies along the lens plane. Besides, considering that the holographic materials are not sensitive to the wavelengths for which the solar cells are most efficient, the reconstruction wavelength is usually different from the recording one. As a consequence, not all points of the lens work at Bragg condition for a defined incident direction or wavelength. A software tool that calculates the direction and efficiency of solar rays at the output of a volume holographic element has been developed in this study. It allows the analysis of the total energy that reaches the solar cell, taking into account the sun movement, the solar spectrum and the sensitivity of the solar cell. The dependence of the recording wavelength on the collected energy is studied with this software. As the recording angle is different along a holographic lens, some zones of the lens could not act as a volume hologram. The efficiency at the transition zones between volume and thin behavior in lenses recorded in Bayfol HX is experimentally analyzed in order to decide if the energy of generated higher diffraction orders has to be included in the simulation.

Potential for use of InP solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Potential for use of indium phosphide solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Hybrid solar collector using nonimaging optics and photovoltaic components

NASA Astrophysics Data System (ADS)

Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

2015-08-01

The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

Towards Efficient Spectral Converters through Materials Design for Luminescent Solar Devices.

PubMed

McKenna, Barry; Evans, Rachel C

2017-07-01

Single-junction photovoltaic devices exhibit a bottleneck in their efficiency due to incomplete or inefficient harvesting of photons in the low- or high-energy regions of the solar spectrum. Spectral converters can be used to convert solar photons into energies that are more effectively captured by the photovoltaic device through a photoluminescence process. Here, recent advances in the fields of luminescent solar concentration, luminescent downshifting, and upconversion are discussed. The focus is specifically on the role that materials science has to play in overcoming barriers in the optical performance in all spectral converters and on their successful integration with both established (e.g., c-Si, GaAs) and emerging (perovskite, organic, dye-sensitized) cell types. Current challenges and emerging research directions, which need to be addressed for the development of next-generation luminescent solar devices, are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

Role of Concentrating Solar Power in Integrating Solar and Wind Energy: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denholm, P.; Mehos, M.

2015-06-03

As wind and solar photovoltaics (PV) increase in penetration it is increasingly important to examine enabling technologies that can help integrate these resources at large scale. Concentrating solar power (CSP) when deployed with thermal energy storage (TES) can provide multiple services that can help integrate variable generation (VG) resources such as wind and PV. CSP with TES can provide firm, highly flexible capacity, reducing minimum generation constraints which limit penetration and results in curtailment. By acting as an enabling technology, CSP can complement PV and wind, substantially increasing their penetration in locations with adequate solar resource.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Concentrating Solar Power Projects - ISCC Hassi R'mel | Concentrating Solar

Science.gov Websites

solar power (CSP) project, with data organized by background, participants, and power plant consists of a 150 MWe hybrid power plant composed of a combined cycle and a 20 MWe solar thermal plant : Abener Operator(s): Abener Generation Offtaker(s): Sonatrach Plant Configuration Solar Field Solar-Field

Exact analytic flux distributions for two-dimensional solar concentrators.

PubMed

Fraidenraich, Naum; Henrique de Oliveira Pedrosa Filho, Manoel; Vilela, Olga C; Gordon, Jeffrey M

2013-07-01

A new approach for representing and evaluating the flux density distribution on the absorbers of two-dimensional imaging solar concentrators is presented. The formalism accommodates any realistic solar radiance and concentrator optical error distribution. The solutions obviate the need for raytracing, and are physically transparent. Examples illustrating the method's versatility are presented for parabolic trough mirrors with both planar and tubular absorbers, Fresnel reflectors with tubular absorbers, and V-trough mirrors with planar absorbers.

Silicon incorporation in GaAs: From delta-doping to monolayer insertion

NASA Astrophysics Data System (ADS)

Wagner, J.; Newman, R. C.; Roberts, C.

1995-08-01

Raman spectroscopy was used to study the incorporation of Si into doping layers in GaAs, grown by molecular beam epitaxy at a temperature of 400 °C, for Si concentrations ranging from the δ-doping level to a ML coverage. The strength of the scattering by local vibrational modes of substitutional Si was almost constant for Si areal concentration [Si]A in the range 5×1012<[Si]A<5×1013 cm-2 but then decreased, dropping below the detection limit for [Si]A≳3×1014 cm-2. At these concentrations a new vibrational band emerged at a frequency close to 470 cm-1 and developed into the optic zone center phonon of a coherently strained epitaxial layer of Si embedded in GaAs when a coverage of ≊1.5 ML (9.3×1014 cm-2) was reached. These findings strongly indicate that the observed saturation and the eventual decrease of the concentration of substitutional silicon is caused by an increasing incorporation of deposited Si into two-dimensional islands of covalently bonded Si.

Concentrating solar collector subsystem: Preliminary design package

NASA Technical Reports Server (NTRS)

1977-01-01

Preliminary design data are presented for a concentrating solar collector including an attitude controller. Provided are schedules, technical status, all documents required for preliminary design, and other program activities.

Gallium Arsenide solar cell radiation damage experiment

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

1991-01-01

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Gaalas/Gaas Solar Cell Process Study

NASA Technical Reports Server (NTRS)

Almgren, D. W.; Csigi, K. I.

1980-01-01

Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process.

The NASA Lewis Research Center program in space solar cell research and technology. [efficient silicon solar cell development program

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.

1979-01-01

Progress in space solar cell research and technology is reported. An 18 percent-AMO-efficient silicon solar cell, reduction in the radiation damage suffered by silicon solar cells in space, and high efficiency wrap-around contact and thin (50 micrometer) coplanar back contact silicon cells are among the topics discussed. Reduction in the cost of silicon cells for space use, cost effective GaAs solar cells, the feasibility of 30 percent AMO solar energy conversion, and reliable encapsulants for space blankets are also considered.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

1991-01-01

The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de

2016-07-18

We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and opticallymore » injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.« less

GaAs Monolithic Microwave Subsystem Technology Base

DTIC Science & Technology

1980-01-01

To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

Comparative study of solar optics for paraboloidal concentrators

NASA Technical Reports Server (NTRS)

Wen, L.; Poon, P.; Carley, W.; Huang, L.

1979-01-01

Different analytical methods for computing the flux distribution on the focal plane of a paraboloidal solar concentrator are reviewed. An analytical solution in algebraic form is also derived for an idealized model. The effects resulting from using different assumptions in the definition of optical parameters used in these methodologies are compared and discussed in detail. These parameters include solar irradiance distribution (limb darkening and circumsolar), reflector surface specular spreading, surface slope error, and concentrator pointing inaccuracy. The type of computational method selected for use depends on the maturity of the design and the data available at the time the analysis is made.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

PubMed

Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2012-09-12

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

2015-09-28

We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

Solids-based concentrated solar power receiver

DOEpatents

None

2018-04-10

A concentrated solar power (CSP) system includes channels arranged to convey a flowing solids medium descending under gravity. The channels form a light-absorbing surface configured to absorb solar flux from a heliostat field. The channels may be independently supported, for example by suspension, and gaps between the channels are sized to accommodate thermal expansion. The light absorbing surface may be sloped so that the inside surfaces of the channels proximate to the light absorbing surface define downward-slanting channel floors, and the flowing solids medium flows along these floors. Baffles may be disposed inside the channels and oriented across the direction of descent of the flowing solids medium. The channels may include wedge-shaped walls forming the light-absorbing surface and defining multiple-reflection light paths for solar flux from the heliostat field incident on the light-absorbing surface.

Solar concentrator with integrated tracking and light delivery system with summation

DOEpatents

Maxey, Lonnie Curt

2015-05-05

A solar light distribution system includes a solar light concentrator that is affixed externally to a light transfer tube. Solar light waves are processed by the concentrator into a collimated beam of light, which is then transferred through a light receiving port and into the light transfer tube. A reflector redirects the collimated beam of light through the tube to a light distribution port. The interior surface of the light transfer tube is highly reflective so that the light transfers through the tube with minimal losses. An interchangeable luminaire is attached to the light distribution port and provides light inside of a structure. A sun tracking device rotates the concentrator and the light transfer tube to optimize the receiving of solar light by the concentrator throughout the day. The system provides interior lighting that uses only renewable energy sources, and releases no carbon dioxide emissions into the atmosphere.

Solar concentrator with integrated tracking and light delivery system with collimation

DOEpatents

Maxey, Lonnie Curt

2015-06-09

A solar light distribution system includes a solar light concentrator that is affixed externally to a light transfer tube. Solar light waves are processed by the concentrator into a collimated beam of light, which is then transferred through a light receiving port and into the light transfer tube. A reflector directs the collimated beam of light through the tube to a light distribution port. The interior surface of the light transfer tube is highly reflective so that the light transfers through the tube with minimal losses. An interchangeable luminaire is attached to the light distribution port and distributes light inside of a structure. A sun tracking device rotates the concentrator and the light transfer tube to optimize the receiving of solar light by the concentrator throughout the day. The system provides interior lighting, uses only renewable energy sources, and releases no carbon dioxide emissions into the atmosphere.

Applications of maximally concentrating optics for solar energy collection

NASA Astrophysics Data System (ADS)

O'Gallagher, J.; Winston, R.

1985-11-01

A new family of optical concentrators based on a general nonimaging design principle for maximizing the geometric concentration, C, for radiation within a given acceptance half angle ±θα has been developed. The maximum limit exceeds by factors of 2 to 10 that attainable by systems using focusing optics. The wide acceptance angles permitted using these techniques have several unique advantages for solar concentrators including the elimination of the diurnal tracking requirement at intermediate concentrations (up to ˜10x), collection of circumsolar and some diffuse radiation, and relaxed tolerances. Because of these advantages, these types of concentrators have applications in solar energy wherever concentration is desired, e.g. for a wide variety of both thermal and photovoltaic uses. The basic principles of nonimaging optical design are reviewed. Selected configurations for thermal collector applications are discussed and the use of nonimaging elements as secondary concentrators is illustrated in the context of higher concentration applications.

Cadmium telluride solar cells: Record-breaking voltages

DOE PAGES

Poplawsky, Jonathan D.

2016-01-01

Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

High-performance flat-panel solar thermoelectric generators with high thermal concentration.

PubMed

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-05-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. © 2011 Macmillan Publishers Limited. All rights reserved

Experiments on solar photovoltaic power generation using concentrator and liquid cooling

NASA Technical Reports Server (NTRS)

Beam, B. H.; Hansen, C. F.

1975-01-01

Calculations and experimental data are presented leading to the development of a practical, economical solar photovoltaic power supply. The concept involves concentration of sunlight up to about 100 times normal solar intensity in a solar tracking collector and directing this to an array of solar cells. The cells are immersed in water circulated from a thermal reservoir which limits cell temperature rise to about 20 C above ambient during the day and which cools to ambient temperature during the night. Experiments were conducted on solar cells using a Fresnel lens for magnification, a telescope equatorial mount with clock drive, and tap water circulated through the solar cell holder cavity. Test results show that cells operate satisfactorily under these conditions. Power outputs achieved experimentally with cell optimized for 25 suns were linear with concentration to about 15 suns. Cells optimized for 100 suns were not available, but a corresponding linear relation of power output with concentration is anticipated. Test results have been used in a design analysis of the cost of systems utilizing this technique.

High-performance flat-panel solar thermoelectric generators with high thermal concentration

NASA Astrophysics Data System (ADS)

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J. Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-07-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m-2) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

Concentrating Solar Power Projects - Gulang 100MW Thermal Oil Parabolic

Science.gov Websites

Trough project | Concentrating Solar Power | NREL Gulang 100MW Thermal Oil Parabolic Trough project Status Date: September 29, 2016 Project Overview Project Name: Gulang 100MW Thermal Oil Parabolic ): Webmaster Solar Participants Developer(s): Changzhou Royal Tech Solar Thermal Equipment Co., Ltd. Owner(s

Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

NASA Astrophysics Data System (ADS)

Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

Achievement of ultrahigh solar concentration with potential for efficient laser pumping.

PubMed

Gleckman, P

1988-11-01

Measurements are reported of the irradiance produced by a two-stage solar concentrator designed to approach the thermodynamic limit. Sunlight is collected by a 40.6-cm diam parabolic primary which forms a 0.98-cm diam image. The image is reconcentrated by a nonimaging refracting secondary with index n = 1.53 to a final aperture 1.27 mm in diameter. Thus the geometrical concentration ratio is 102, 000. The highest irradiance value achieved was 4.4 +/- 0.2 kW cm(-2), or 56,000 +/- 5000 suns, relative to a solar disk insolation of 800 W m(-2). This is greater than the previous peak solar irradiance record by nearly a factor of 3, and it is 68% of that existing at the solar surface itself. The efficiency with which we concentrated 55 W of sunlight to a small spot suggests that our two-stage system would be an excellent candidate for solar pumping of solid state lasers.

Multi-facet concentrator of solar setup for irradiating the objects placed in a target plane with solar light

DOEpatents

Lewandowski, Allan A.; Yampolskiy, Vladislav; Alekseev, Valerie; Son, Valentin

2001-01-01

According to the proposed invention, this technical result is achieved so that many-facet concentrator of a solar setup for exposure of objects, placed in a target plane, to the action of solar radiation containing a supporting frame and facets differing by that the facets of the concentrator are chosen with spherical focusing reflective surfaces of equal focal lengths and with selective coatings reflecting a desired spectral fraction of solar radiation, and are arranged on the supporting frame symmetrically with respect to the common axis of the concentrator, their optical axes being directed to the single point on the optical axis of the concentrator located before the nominal focus point of the concentrator and determining the position of arranging the target plane.

Dynamic Characterization of an Inflatable Concentrator for Solar Thermal Propulsion

NASA Technical Reports Server (NTRS)

Leigh, Larry M.; Tinker, Michael L.; McConnaughey, Paul (Technical Monitor)

2002-01-01

Solar-thermal propulsion is a concept for producing thrust sufficient for orbital transfers and requires innovative, lightweight structures. This note presents a description of an inflatable concentrator that consists of a torus, lens simulator, and three tapered struts. Modal testing was discussed for characterization and verification of the solar concentrator assembly. Finite element shell models of the concentrator were developed using a two-step nonlinear approach, and results were compared to test data. Reasonable model-to-test agreement was achieved for the torus, and results for the concentrator assembly were comparable to the test for several modes.

Luminescent solar concentrators and all-inorganic nanoparticle solar cells for solar energy harvesting

NASA Astrophysics Data System (ADS)

Sholin, Veronica

Increasing energy demand and the parallel increase of greenhouse gas emissions are challenging researchers to find new and cleaner energy sources. Solar energy harvesting is arguably the most promising candidate for replacing fossil-fuel power generation. Photovoltaics are the most direct way of collecting solar energy; cost continues to hinder large-scale implementation of photovoltaics, however. Therefore, alternative technologies that will allow the extraction of solar power, while maintaining the overall costs of fabrication, installation, collection, and distribution low, must be explored. This thesis focuses on the fabrication and testing of two types of devices that step up to this challenge: the luminescent solar concentrator (LSC) and all-inorganic nanoparticle solar cells. In these devices I make use of novel materials, semiconducting polymers and inorganic nanoparticles, both of which have lower costs than the crystalline materials used in the fabrication of traditional photovoltaics. Furthermore, the cost of manufacturing LSCs and the nanoparticle solar cells is lower than the manufacturing cost of traditional optics-based concentrators and crystalline solar cells. An LSC is essentially a slab of luminescent material that acts as a planar light pipe. The LSC absorbs incoming photons and channels fluoresced photons toward appropriately located solar cells, which perform the photovoltaic conversion. By covering large areas with relatively inexpensive fluorescing organic dyes or semiconducting polymers, the area of solar cell needed is greatly reduced. Because semiconducting polymers and quantum dots may have small absorption/emission band overlaps, tunable absorption, and longer lifetimes, they are good candidates for LSC fabrication, promising improvement with respect to laser dyes traditionally used to fabricate LSCs. Here the efficiency of LSCs consisting of liquid solutions of semiconducting polymers encased in glass was measured and compared to the

Optical design of a solar flux homogenizer for concentrator photovoltaics.

PubMed

Kreske, Kathi

2002-04-01

An optical solution is described for the redistribution of the light reflected from a 400-m2 paraboloidal solar concentrating dish as uniformly as possible over an approximately 1-m2 plane. Concentrator photovoltaic cells will be mounted at this plane, and they require a uniform light distribution for high efficiency. It is proposed that the solar cells will be mounted at the output of a rectangular receiver box with reflective sidewalls (i.e., a kaleidoscope), which will redistribute the light. I discuss the receiver box properties that influence the light distribution reaching the solar cells.

New Passivation Methods of GaAs.

DTIC Science & Technology

1980-01-01

Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

Formation and photoluminescence of GaAs1-xNx dilute nitride achieved by N-implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2014-07-01

In this paper, we present the fabrication of dilute nitride semiconductor GaAs1-xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1 = 0.38% and ximp2 = 0.76%. The GaAs1-xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs1-xNx samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1 = 0.38% and ximp2 = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.

Lightweight solar concentrator structures, phase 2

NASA Technical Reports Server (NTRS)

Williams, Brian E.; Kaplan, Richard B.

1993-01-01

This report summarizes the results of the program conducted by Ultramet under SBIR Phase 2 Contract NAS3-25418. The objective of this program was to develop lightweight materials and processes for advanced high accuracy Space Solar Concentrators using rigidized foam for the substrate structure with an integral optical surface.

Luminescent solar concentrators with fiber geometry.

PubMed

Edelenbosch, Oreane Y; Fisher, Martyn; Patrignani, Luca; van Sark, Wilfried G J H M; Chatten, Amanda J

2013-05-06

The potential of a fibre luminescent solar concentrator has been explored by means of both analytical and ray-tracing techniques. Coated fibres have been found to be more efficient than homogeneously doped fibres, at low absorption. For practical fibres concentration is predicted to be linear with fibre length. A 1 m long, radius 1 mm, fibre LSC doped with Lumogen Red 305 is predicted to concentrate the AM1.5 g spectrum up to 1100 nm at normal incidence by ~35 x. The collection efficiency under diffuse and direct irradiance in London has been analysed showing that, even under clear sky conditions, in winter the diffuse contribution equals the direct.

NASDA activities in space solar power system research, development and applications

NASA Technical Reports Server (NTRS)

Matsuda, Sumio; Yamamoto, Yasunari; Uesugi, Masato

1993-01-01

NASDA activities in solar cell research, development, and applications are described. First, current technologies for space solar cells such as Si, GaAs, and InP are reviewed. Second, future space solar cell technologies intended to be used on satellites of 21st century are discussed. Next, the flight data of solar cell monitor on ETS-V is shown. Finally, establishing the universal space solar cell calibration system is proposed.

GaAs/Ge solar panels for the SAMPEX program

NASA Technical Reports Server (NTRS)

Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

1992-01-01

GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

Self-tracking solar concentrator with an acceptance angle of 32°.

PubMed

Zagolla, Volker; Dominé, Didier; Tremblay, Eric; Moser, Christophe

2014-12-15

Solar concentration has the potential to decrease the cost associated with solar cells by replacing the receiving surface aperture with cheaper optics that concentrate light onto a smaller cell aperture. However a mechanical tracker has to be added to the system to keep the concentrated light on the size reduced solar cell at all times. The tracking device itself uses energy to follow the sun's position during the day. We have previously shown a mechanism for self-tracking that works by making use of the infrared energy of the solar spectrum, to activate a phase change material. In this paper, we show an implementation of a working 53 x 53 mm(2) self-tracking system with an acceptance angle of 32° ( ± 16°). This paper describes the design optimizations and upscaling process to extend the proof-of-principle self-tracking mechanism to a working demonstration device including the incorporation of custom photodiodes for system characterization. The current version demonstrates an effective concentration of 3.5x (compared to 8x theoretical) over 80% of the desired acceptance angle. Further improvements are expected to increase the efficiency of the system and open the possibility to expand the device to concentrations as high as 200x (C(geo) = 400x, η = 50%, for a solar cell matched spectrum).

Structural and electronic properties of isovalent boron atoms in GaAs

NASA Astrophysics Data System (ADS)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the <110 > directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure

NASA Astrophysics Data System (ADS)

Li, Jian; Han, Xiuxun; Dong, Chen; Fan, Changzeng

2017-12-01

Using first-principles total energy calculations, we have studied the structural, mechanical and electronic properties of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (with x from 0 to 1) within density functional theory (DFT) framework. To obtain the ideal band gap, we employ the semi-empirical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U). The calculated results illustrate the varying lattice constants and band gap in GaAs1-xNx alloys as functions of the nitrogen concentration x. According to the pressure dependence of the lattice constants and volume, the higher N concentration alloy exhibits the better anti-compressibility. In addition, an increasing band gap is predicted under 20 GPa pressure for GaAs1-xNx alloys.

Low energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Kamath, S.; Knechtli, R. C.

1979-01-01

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

New PSA high concentration solar furnace SF40

NASA Astrophysics Data System (ADS)

Rodriguez, Jose; Cañadas, Inmaculada; Zarza, Eduardo

2016-05-01

A new solar furnace has been designed and built at Plataforma Solar de Almería. In this work, its main components such as heliostat, concentrator, attenuator and test table, and the method used to align them are described. Other equipment like the auxiliary systems necessary for the solar operation, vacuum chamber and gas system are outlined too. Finally, the thermal characteristics of the focus were measured during a test campaign, where different planes along the optical axis were scanned with a radiometer, and the peak flux was obtained and is presented in the last section of this report.

Two-stage concentrating systems for pumping of solar lasers

NASA Astrophysics Data System (ADS)

Klichev, Sh.; Bakhramov, S.; Abdurakhmanov, A.; Fazilov, A.; Payziyev, Sh.; Ismanjanov, A.; Bokoev, K.; Dudko, J.; Klichev, Z.

2008-02-01

One of the ways to increase the concentrating ability of solar concentrators used for pumping of lasers is an additional concentration of a sunlight by a secondary concentrator allocated in a focal area of the primary concentrator. Limiting concentrations of those compound systems on the basis of non-imaging optics have been received by Winston. However more detailed calculations on the basis of irradiance integral are necessary for designing and practical realization of such systems. It is especially important for the systems including generally compound of two secondary concentrators. The full design procedure for concentration by systems of type compound parabolic concentrator or Winston concentrator (focon) and a cone concentrator is developed in the work in view of real distribution of brightness on a solar disk and discrepancies of primary concentrator geometry. The generalized dependences of efficiency of compound systems for the maximal and mean concentration in a focal plane of the primary paraboloidal concentrator depending on its disclosing angle U 0 and discrepancies of geometry are received. It is shown, that focon only up to U 0 < 30° is more effective, than the cone and further their efficiencies are identical. It is shown, that secondary concentrator allows to increase the pumping efficiency not less, than 30%.

Cassegrain Solar Concentrator System for ISRU Material Processing

NASA Technical Reports Server (NTRS)

Colozza, Anthony J.; Macosko, Robert; Castle, Charles; Sacksteder, Kurt; Suzuki, Nantel H.; Mulherin, James

2012-01-01

A 0.5 m diameter Cassegrain concentrator was constructed as a means of providing highly concentrated sunlight for the demonstration processing of lunar simulated regolith and other NASA In-Situ Resource Utilization Project (ISRU) reaction processes. The concentrator is constructed of aluminum with a concentration ratio of approximately 3000 to 1. The concentrator focuses solar energy into a movable tray located behind the concentrator. This tray can hold simulated regolith or any other material and or device to be tested with concentrated solar energy. The tray is movable in one axis. A 2-axis extended optical system was also designed and fabricated. The extended optical system is added to the back of the primary concentrator in place of the moveable test tray and associated apparatus. With this optical system the focused sunlight can be extended from the back of the primary concentrator toward the ground with the added advantage of moving the focal point axially and laterally relative to the ground. This allows holding the focal point at a fixed position on the ground as the primary concentrator tracks the sun. Also, by design, the focal point size was reduced via the extended optics by a factor of 2 and results in a concentration ratio for the system of approximately 6,000 to 1.The designs of both optical systems are discussed. The results from simulated regolith melting tests are presented as well as the operational experience of utilizing the Cassegrain concentrator system.

Alignment method for parabolic trough solar concentrators

DOEpatents

Diver, Richard B [Albuquerque, NM

2010-02-23

A Theoretical Overlay Photographic (TOP) alignment method uses the overlay of a theoretical projected image of a perfectly aligned concentrator on a photographic image of the concentrator to align the mirror facets of a parabolic trough solar concentrator. The alignment method is practical and straightforward, and inherently aligns the mirror facets to the receiver. When integrated with clinometer measurements for which gravity and mechanical drag effects have been accounted for and which are made in a manner and location consistent with the alignment method, all of the mirrors on a common drive can be aligned and optimized for any concentrator orientation.

Efficiency of tandem solar cell systems as function of temperature and solar energy concentration ratio

NASA Technical Reports Server (NTRS)

Gokcen, N. A.; Loferski, J. J.

1979-01-01

The results of a comprehensive theoretical analysis of tandem photovoltaic solar cells as a function of temperature and solar concentration ratio are presented. The overall efficiencies of tandem cell stacks consisting of as many as 24 cells having gaps in the 0.7 to 3.6 eV range were calculated for temperatures of 200, 300, 400, and 500 K and for illumination by an AMO solar spectrum having concentration ratios of 1, 100, 500, and 1000 suns. For ideal diodes (A = B = 1), the calculations show that the optimized overall efficiency has a limiting value eta sub opt of approximately 70 percent for T = 200 K and C = 1000; for T = 300 K and C = 1000, this limiting efficiency approaches 60 percent.

High energy proton radiation damage to (AlGa)As-G aAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Goldhammer, L.; Kamath, S.; Knechtli, R. C.

1979-01-01

Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.

Dielectric compound parabolic concentrating solar collector with frustrated total internal reflection absorber

NASA Astrophysics Data System (ADS)

Hull, J. R.

Since its introduction, the concept of nonimaging solar concentrators, as exemplified by the compound parabolic concentrator (CPC) design, has greatly enhanced the ability to collect solar energy efficiently in thermal and photovoltaic devices. When used as a primary concentrator, a CPC can provide significant concentration without the complication of a tracking mechanism and its associated maintenance problems. When used as a secondary, a CPC provides higher total concentration, or for a fixed concentration, tolerates greater tracking error in the primary.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Phosphine Functionalization GaAs(111)A Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Traub, M.; Biteen, J; Michalak, D

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

Concentrating Solar Power Systems

NASA Astrophysics Data System (ADS)

Pitz-Paal, R.

2017-07-01

Development of Concentrating Solar Power Systems has started about 40 years ago. A first commercial implementation was performed between 1985 and 1991 in California. However, a drop in gas prices caused a longer period without further deployment. It was overcome in 2007 when new incentive schemes for renewables in Spain and the US enabled a commercial restart. In 2016, almost 100 commercial CSP plants with more than 5GW are installed worldwide. This paper describes the physical background of CSP technology, its technical characteristics and concepts. Furthermore, it discusses system performances, cost structures and the expected advancement.

Dish concentrators for solar thermal energy - Status and technology development

NASA Technical Reports Server (NTRS)

Jaffe, L. D.

1981-01-01

Comparisons are presented of point-focusing, or 'dish' solar concentrator system features, development status, and performance levels demonstrated to date. In addition to the requirements of good optical efficiency and high geometric concentration ratios, the most important future consideration in solar thermal energy dish concentrator design will be the reduction of installed and lifetime costs, as well as the materials and labor costs of production. It is determined that technology development initiatives are needed in such areas as optical materials, design wind speeds and wind loads, structural configuration and materials resistance to prolonged exposure, and the maintenance of optical surfaces. The testing of complete concentrator systems, with energy-converting receivers and controls, is also necessary. Both reflector and Fresnel lens concentrator systems are considered.

Design and testing of a uniformly solar energy TIR-R concentration lenses for HCPV systems.

PubMed

Shen, S C; Chang, S J; Yeh, C Y; Teng, P C

2013-11-04

In this paper, total internal reflection-refraction (TIR-R) concentration (U-TIR-R-C) lens module were designed for uniformity using the energy configuration method to eliminate hot spots on the surface of solar cell and increase conversion efficiency. The design of most current solar concentrators emphasizes the high-power concentration of solar energy, however neglects the conversion inefficiency resulting from hot spots generated by uneven distributions of solar energy concentrated on solar cells. The energy configuration method proposed in this study employs the concept of ray tracing to uniformly distribute solar energy to solar cells through a U-TIR-R-C lens module. The U-TIR-R-C lens module adopted in this study possessed a 76-mm diameter, a 41-mm thickness, concentration ratio of 1134 Suns, 82.6% optical efficiency, and 94.7% uniformity. The experiments demonstrated that the U-TIR-R-C lens module reduced the core temperature of the solar cell from 108 °C to 69 °C and the overall temperature difference from 45 °C to 10 °C, and effectively relative increased the conversion efficiency by approximately 3.8%. Therefore, the U-TIR-R-C lens module designed can effectively concentrate a large area of sunlight onto a small solar cell, and the concentrated solar energy can be evenly distributed in the solar cell to achieve uniform irradiance and effectively eliminate hot spots.

Nitridation of porous GaAs by an ECR ammonia plasma

NASA Astrophysics Data System (ADS)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Concentrated solar energy used for sintering magnesium titanates for electronic applications

NASA Astrophysics Data System (ADS)

Apostol, Irina; Rodríguez, Jose; Cañadas, Inmaculada; Galindo, Jose; Mendez, Senen Lanceros; de Abreu Martins, Pedro Libȃnio; Cunha, Luis; Saravanan, Kandasamy Venkata

2018-04-01

Solar energy is an important renewable source of energy with many advantages: it is unlimited, clean and free. The main objective of this work was to sinter magnesium titanate ceramics in a solar furnace using concentrated solar energy, which is a novel and original process. The direct conversion of solar power into high temperature makes this process simple, feasible and ecologically viable/environmentally sustainable. We performed the solar sintering experiments at Plataforma Solar de Almeria-CIEMAT, Spain. This process takes place in a vertical axis solar furnace (SF5-5 kW) hosting a mobile flat mirror heliostat, a fixed parabolic mirror concentrator, an attenuator and a test table the concentrator focus. We sintered (MgO)0.63(TiO2)0.37, (MgO)0.49(TiO2)0.51, (MgO)0.50(TiO2)0.50 ceramics samples in air at about 1100 °C for a duration of 16 min, 1 h, 2 h and 3 h in the solar furnace. The MgO/TiO2 ratio and the dwell time was varied in order to obtain phase pure MgTiO3 ceramic. We obtained a pure MgTiO3 geikielite phase by solar sintering of (MgO)0.63(TiO2)0.37 samples at 1100 °C (16 min-3 h). Samples of (MgO)0.63(TiO2)0.37, solar sintered at 1100 °C for 3 h, resulted in well-sintered, non-porous samples with good density (3.46 g/cm3). The sintered samples were analyzed by XRD for phase determination. The grain and surface morphology was observed using SEM. Electrical measurements were carried out on solar sintered samples. The effect of processing parameters on microstructure and dielectric properties were investigated and is presented.

Heat Transfer Phenomena in Concentrating Solar Power Systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armijo, Kenneth Miguel; Shinde, Subhash L.

Concentrating solar power (CSP) utilizes solar thermal energy to drive a thermal power cycle for the generation of electricity. CSP systems are facilitated as large, centralized power plants , such as power towers and trough systems, to take advantage of ec onomies of scale through dispatchable thermal energy storage, which is a principle advantage over other energy generation systems . Additionally, the combination of large solar concentration ratios with high solar conversion efficiencies provides a strong o pportunity of employment of specific power cycles such as the Brayton gas cycle that utilizes super critical fluids such as supercritical carbon dioxidemore » (s CO 2 ) , compared to other sola r - fossil hybrid power plants. A comprehensive thermal - fluids examination is provided by this work of various heat transfer phenomena evident in CSP technologies. These include sub - systems and heat transfer fundamental phenomena evident within CSP systems , which include s receivers, heat transfer fluids (HTFs), thermal storage me dia and system designs , thermodynamic power block systems/components, as well as high - temperature materials. This work provides literature reviews, trade studies, and phenomenological comparisons of heat transfer media (HTM) and components and systems, all for promotion of high performance and efficient CSP systems. In addition, f urther investigations are also conducted that provide advanced heat transfer modeling approaches for gas - particle receiver systems , as well as performance/efficiency enhancement re commendations, particularly for solarized supercritical power systems .« less

Performance Analysis and Optimization of Concentrating Solar Thermoelectric Generator

NASA Astrophysics Data System (ADS)

Lamba, Ravita; Manikandan, S.; Kaushik, S. C.

2018-06-01

A thermodynamic model for a concentrating solar thermoelectric generator considering the Thomson effect combined with Fourier heat conduction, Peltier, and Joule heating has been developed and optimized in MATLAB environment. The temperatures at the hot and cold junctions of the thermoelectric generator were evaluated by solving the energy balance equations at both junctions. The effects of the solar concentration ratio, input electrical current, number of thermocouples, and electrical load resistance ratio on the power output and energy and exergy efficiencies of the system were studied. Optimization studies were carried out for the STEG system, and the optimum number of thermocouples, concentration ratio, and resistance ratio determined. The results showed that the optimum values of these parameters are different for conditions of maximum power output and maximum energy and exergy efficiency. The optimum values of the concentration ratio and load resistance ratio for maximum energy efficiency of 5.85% and maximum exergy efficiency of 6.29% were found to be 180 and 1.3, respectively, with corresponding power output of 4.213 W. Furthermore, at higher concentration ratio (C = 600), the optimum number of thermocouples was found to be 101 for maximum power output of 13.75 W, maximum energy efficiency of 5.73%, and maximum exergy efficiency of 6.16%. Moreover, the optimum number of thermocouple was the same for conditions of maximum power output and energy and exergy efficiency. The results of this study may provide insight for design of actual concentrated solar thermoelectric generator systems.

Miniaturization of Fresnel lenses for solar concentration: a quantitative investigation.

PubMed

Duerr, Fabian; Meuret, Youri; Thienpont, Hugo

2010-04-20

Sizing down the dimensions of solar concentrators for photovoltaic applications offers a number of promising advantages. It provides thinner modules and smaller solar cells, which reduces thermal issues. In this work a plane Fresnel lens design is introduced that is first analyzed with geometrical optics. Because of miniaturization, pure ray tracing may no longer be valid to determine the concentration performance. Therefore, a quantitative wave optical analysis of the miniaturization's influence on the obtained concentration performance is presented. This better quantitative understanding of the impact of diffraction in microstructured Fresnel lenses might help to optimize the design of several applications in nonimaging optics.

Material growth and characterization directed toward improving III-V heterojunction solar cells

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Alexander, W. E.; Collis, W.; Abul-Fadl, A.

1979-01-01

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability