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Sample records for gaas monolithic surface

  1. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  2. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  3. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  4. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  5. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    NASA Technical Reports Server (NTRS)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  6. Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

    NASA Technical Reports Server (NTRS)

    Kunath, R. R.; Bhasin, K. B.

    1986-01-01

    The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

  7. Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Petersen, W. C.; Siu, D. P.; Cook, H. F.

    1991-01-01

    Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

  8. Surface-modified GaAs terahertz plasmon emitter

    NASA Astrophysics Data System (ADS)

    Darmo, J.; Strasser, G.; Muller, T.; Bratschitsch, R.; Unterrainer, K.

    2002-07-01

    We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown (LT) GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term performance of the modified emitters is improved by the LT GaAs surface layer.

  9. Optical gain control of GaAs microwave monolithic integrated circuit distributed amplifier

    NASA Astrophysics Data System (ADS)

    Paolella, Arthur; Herczfeld, Peter R.

    1989-02-01

    An optical gain control circuit for controlling the gain of a GaAs MMIC distributed amplifier having a dc gain control is provided. Variable intensity light from a controlled LED is directed to the surface of a GaAs multi-finger FET by means of an optical fiber. The FET is gate biased to a point near pinch-off to maximize its light sensitivity and the drain and source of the FET are serially connected with a fixed resistance in a dc voltage divider circuit so that the output of the voltage divider circuit changes as a function of the change in light intensity of the LED. A MMIC operational amplifier connected in an inverter mode is coupled between the output of the voltage divider circuit and the dc gain control of the distributed amplifier to control the gain of that amplifier.

  10. Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Kot, R. A.; Oliver, J. D.; Wilson, S. G.

    1984-01-01

    A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.

  11. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  12. A GaAs monolithic low-noise broad-band amplifier

    NASA Astrophysics Data System (ADS)

    Archer, J. A.; Weidlich, H. P.; Pettenpaul, E.; Petz, F. A.; Huber, J.

    1981-12-01

    This paper describes the design, fabrication, and performance of GaAs monolithic low-noise broad-band amplifiers intended for broadcast receiver antenna amplifier, IF amplifier, and instrumentation applications. The process technology includes the use of Czochralski-grown semiinsulating substrates, localized implantation of ohmic and FET channel regions, and silicon nitride for passivation and MIM capacitors. The amplifiers employ shunt feedback to obtain input matching and flat broad-band response. One amplifier provides a gain of 24 dB, bandwidth of 930 MHz, and noise figure of 5.0 dB. A second amplifier provides a gain of 17 dB, bandwidth of 1400 MHz, and noise figure of 5.6 dB. Input and output VSWR's are typically less than 2:1 and the third-order intercept points are 28 and 32 dB, respectively. Improved noise figure and intercept point can be achieved by the use of external RF chokes.

  13. High surface area, high permeability carbon monoliths

    SciTech Connect

    Lagasse, R.R.; Schroeder, J.L.

    1994-12-31

    The goal of this work is to prepare carbon monoliths having precisely tailored pore size distribution. Prior studies have demonstrated that poly(acrylonitrile) can be processed into a precursor having tailored macropore structure. Since the macropores were preserved during pyrolysis, this synthetic process provided a route to porous carbon having macropores with size =0.1 to 10{mu}m. No micropores of size <2 nm could be detected in the carbon, however, by nitrogen adsorption. In the present work, the authors have processed a different polymer, poly(vinylidene chloride) into a macroporous precursor, Pyrolysis produced carbon monoliths having macropores derived from the polymer precursor as well as extensive microporosity produced during the pyrolysis of the polymer. One of these carbons had BET surface area of 1,050 m{sup 2}/g and about 1.2 cc/g total pore volume, with about 1/3 of the total pore volume in micropores and the remainder in 1{mu}m macropores. No mesopores in the intermediate size range could be detected by nitrogen adsorption. Carbon materials having high surface area as well as micron size pores have potential applications as electrodes for double layer supercapacitors containing liquid electrolyte, or as efficient media for performing chemical separations.

  14. Monolithic integration of GaAs SAW chemical microsensor arrays and detection electronics

    SciTech Connect

    CASALNUOVO,STEPHEN A.; HIETALA,VINCENT M.; HELLER,EDWIN J.; ASON,GREGORY CHARLES; BACA,ALBERT G.

    2000-04-17

    The authors describe the integration of an array of surface acoustic wave delay line chemical sensors with the associated RF microelectronics such that the resulting device operates in a DC in/DC out mode. The microelectronics design for on-chip RF generation and detection is presented. Both hybrid and monolithic approaches are discussed. This approach improves system performance, simplifies packaging and assembly, and significantly reduces overall system size. The array design can be readily scaled to include a large number of sensors.

  15. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  16. The 20 GHz GaAs monolithic power amplifier module development

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

  17. GaAs on Si as a substrate for microwave and millimeter-wave monolithic integration

    NASA Astrophysics Data System (ADS)

    Aksun, M. I.; Morkoc, H.

    1988-01-01

    The effective dielectric constant, characteristic impedance, and dielectric loss of a shielded microstrip line manufactured on namely GaAs, Si, and GaAs/Si are calculated. Dielectric loss versus frequency for the GaAs and Si substrates are shown. The same parameters for GaAs/Si substrate were plotted for two different resistivities of the GaAs overlay material, and for each of three different GaAs overlayer thicknesses. The measurements covered the 10-100-GHz frequency range. Depending on the thickness, results show that high-resistivity GaAs epitaxial layers on Si substrates having moderate resistivities reduce the dielectric loss.

  18. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    SciTech Connect

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano; Frigeri, Cesare; Falub, Claudiu V.; Känel, Hans von

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  19. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  20. Surface structure of GaAs with adsorbed Te

    NASA Astrophysics Data System (ADS)

    Feldman, R. D.; Austin, R. F.

    1986-10-01

    The surface structures that result from the adsorption of Te on (100) GaAs have been shown to affect the orientation of CdTe films on GaAs. Two structures are described here. A low-temperature (6×1) surface leads to (100) film growth. At 580 °C, a new surface results which is characterized by ordering along directions 60° from [011¯] and [01¯1], and leads to (111) growth of CdTe. Both surface structure and the interaction of the group II element with the surface are believed to be important in determining the orientation of the film.

  1. Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

    NASA Astrophysics Data System (ADS)

    Jacobi, K.; Geelhaar, L.; Márquez, J.

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

  2. Nondestructive tribochemistry-assisted nanofabrication on GaAs surface

    PubMed Central

    Song, Chenfei; Li, Xiaoying; Dong, Hanshan; Yu, Bingjun; Wang, Zhiming; Qian, Linmao

    2015-01-01

    A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable plastic deformation under a 4 nm groove, confirming that GaAs can be removed without destruction. Further analysis suggests that the fabrication relies on the tribochemistry with the participation of vapor in humid air. It is proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the removal of GaAs material during the sliding process. As a nondestructive and conductivity-independent method, it will open up new opportunities to fabricate defect-free and well-ordered nucleation positions for quantum dots on GaAs surfaces. PMID:25761910

  3. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Astrophysics Data System (ADS)

    Dinetta, L. C.; Hannon, M. H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  4. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  5. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  6. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1-90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  7. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  8. AlGaAs/GaAs p-i-n photodiode/preamplifier monolithic photoreceiver integrated on a semi-insulating GaAs substrate

    NASA Astrophysics Data System (ADS)

    Wada, O.; Hamaguchi, H.; Miura, S.; Makiuchi, M.; Nakai, K.; Horimatsu, H.; Sakurai, T.

    1985-05-01

    A fully monolithic photoreceiver circuit incorporating an AlGaAs/GaAs p-i-n photodiode and a GaAs field-effect transistor based transimpedance amplifier has been fabricated in the form of a horizontally integrated structure on a semi-insulating GaAs substrate. Parasitic capacitances of the circuit elements have been minimized in the present monolithic circuit, and a short rise and fall time of 1.0 ns, corresponding to an approximate -3 dB frequency of 300 MHz, has been demonstrated at the internal feedback resistance of 1.3 kΩ. Preliminary measurement of the noise characteristics of the present circuit has exhibited an encouraging value of the equivalent input noise current of 13 pA Hz-1/2 at 300 MHz.

  9. Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces

    NASA Astrophysics Data System (ADS)

    Sasaki, Masahiro; Yoshida, Seikoh; Yamada, Chikashi

    1993-10-01

    The reactivity of GaAs and GaAs oxide surfaces to trimethylgallium (TMG) was studied by temperature-programmed scattering (TPS) through the energy accommodation coefficient (EAC). The substrate temperature was increased at a constant rate while the scattered TMG was being measured under a constant flux of TMG supplied to the substrate by a cryo-shrouded quadrupole mass spectrometer. Since the detection efficiency of the spectrometer is inversely proportional to the translational velocity of scattered TMG, the observed intensity variation represents the change in translational velocity of reflected TMG during the temperature increase. The variation of the signal intensities was least-squares analyzed to yield the EAC, which is a measure of the surface reactivity. The thus-obtained reactivity of photo-oxidized GaAs to TMG is smaller than that of dark-oxidized GaAs, which is even smaller than that of a bare GaAs surface. This difference in the reactivity is discussed in relation to the mechanism of selective area growth of GaAs using GaAs oxide as a mask.

  10. Assessment of dynamic surface leaching of monolithic surface road materials.

    PubMed

    Paulus, Hélène; Schick, Joachim; Poirier, Jean-Eric

    2016-07-01

    Construction materials have to satisfy, among others, health and environment requirements. To check the environmental compatibility of road construction materials, release of hazardous substances into water must be assessed. Literature mostly describes the leaching behaviour of recycled aggregates for potential use in base or sub-base layers of roads. But little is known about the release of soluble substances by materials mixed with binders and compacted for intended use on road surface. In the present study, we thus performed a diffusion test with sequential renewal of water during a 64 day period according to CEN/TS 16637-2 specifications, on asphalt concretes and hydraulically bound monoliths, two common surface road materials. It is shown that release of dangerous substances is limited in these hydrodynamic conditions. It was particularly true for asphalt concrete leachates where no metallic trace element, sulphate, chloride or fluoride ion could be quantified. This is because of the low hydraulic conductivity and the low polarity of the petroleum hydrocarbon binder of these specimens. For hydraulically bound materials around 20,000 mg/m(2) of sulphate diffused from the monoliths. It is one order of magnitude higher than chloride diffusion and two orders of magnitude higher than fluoride release. No metallic trace element, except small quantities of copper in the last eluate could be quantified. No adverse effect is to be expected for human and environmental health from the leachates of these compacted surface road construction materials, because all the measured parameters were below EU (Council Directive 98/83/EC) or WHO guidelines for drinking water standards. PMID:27039367

  11. Sb-Stabilized GaAs(100) Surfaces

    NASA Astrophysics Data System (ADS)

    Shanabrook, B. V.; Whitman, L. J.; Bennett, B. R.

    1997-03-01

    Recently, there has been considerable speculation about the structure of Sb-terminated GaAs(100) surfaces.(Esser et al., Phys. Rev. Lett. 77, 4402 (1996)) (Moriarty et al., Phys. Rev. B53, R16148 (1996)) In addition to the previously studied (2x4) reconstruction, we also investigate the more Sb-rich (2x8) reconstruction with in situ RHEED and STM. The (2x8) Sb-terminated surface was prepared by exposing a well-ordered MBE-grown As-terminated (2x4) GaAs (100) surface to Sb. The Sb-terminated (2x4) reconstruction can be formed by heating the (2x8) reconstruction in the absence of Sb flux. The STM images of the (2x8) reconstruction exhibit a complex multilayer structure with a significant dependence on bias. In contrast, the (2x4) reconstruction appears somewhat simpler and suggests that the two As-dimers on the GaAs surface have been replaced by either 1 or 2 Sb dimers. Possible models for each of these novel reconstructions will be presented.

  12. Optical and electrical characterization of surface passivated GaAs nanostructures

    NASA Astrophysics Data System (ADS)

    Arab, Shermin; Chi, Chun Yung; Yao, Maoqing; Chang, Chia-Chi; Dapkus, P. Daniel; Cronin, Stephen B.

    2014-02-01

    GaAs nanostructures are used in different optoelectronic applications including solar cells, LEDs and fast electronics. Although GaAs shows outstanding optical properties, it suffers from surface states and consequently high surface recombination velocity. The surface depletion effects lead to semi-insulating behaviors in GaAs devices. Passivation of GaAs nanostructures (AlGaAs or ionic liquid) lead to surface stability and improvement in optoelectronic properties. We provide a systematic study to compare the optical and electrical improvement after passivation (AlGaAs or ionic liquid) of GaAs nanostructure including nanowires and nanosheets. Both room temperature and low temperature photoluminescent (PL) spectra indicate increase in optical activity of GaAs nanostructures after passivation. Electron beam induced current (EBIC) measurements reveal the diffusion length of carries in different GaAs nanostructures.

  13. ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei

    1995-01-01

    A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  14. Monolithic GaAs digitizer for space-based laser pulse spreading effect

    NASA Technical Reports Server (NTRS)

    Lao, Bennig; Staples, Edward

    1988-01-01

    A 6-bit 1-GHz digitizer was designed to analyze the 1-ns pulse spreading effects in a space based altimeter. The digitizer consisted of four 4-bit flash A/D converters and a 6-bit encoder. Also, the converter utilized four 4-bit converters and a 4-to-6 bit encoder to achieve 6 bit resolution at the 1 GHz sample rate. The design was unique because it utilized only the inverters and NOR gates for the converters and encoder, hence it could be fabricated using the existing state-of-the-art GaAs processing techniques. This GHz digitizer has many commercial applications. It could be applicable to: (1) digital microwave transmission system for the telecommunication industries, (2) pulse monitoring in high kinetic chemical reactions, (3) transient signals in the medical field, and (4) microwave signals in astronomy.

  15. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  16. Nitride surface passivation of GaAs nanowires: impact on surface state density.

    PubMed

    Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

    2015-01-14

    Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

  17. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  18. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  19. A study of binding biotinylated nano-beads to the surface of (001) GaAs

    NASA Astrophysics Data System (ADS)

    Ding, Ximing; Moumanis, Khalid; Dubowski, Jan J.; Frost, Eric H.

    2006-02-01

    We have investigated the deposition of biotinylated nano-beads on the surface of GaAs. The deposition procedure involved either direct coating of (001) GaAs with nano-beads, or binding the nano-beads with avidin immobilized on the surface of (001) GaAs through the interface of biotin and the NH II terminal group of 11-amino-1-undecanethiol (HS(CH II) 11NH II). The efficiency of binding was tested by washing the samples in a solution of a commercial detergent and by subjecting them to a deionized water ultrasonic bath. The results indicate that nano-beads deposited directly on the surface of (001) GaAs withstand the detergent washing test but they are easily removed by ultrasonic washing. In contrast, the nano-beads attached to (001) GaAs through the avidin-biotin-thiol interface survive the ultrasonic washing tests.

  20. Surface photovoltage due to photo-thermo-ionization of surface states - GaAs

    NASA Technical Reports Server (NTRS)

    Morawski, A.; Slusarczuk, M. M. G.; Gatos, H. C.; Lagowski, J.

    1977-01-01

    Surface photovoltage spectroscopy was employed for studying the mechanism of subbandgap photoionization transitions from surface states in GaAs surfaces. It was found that the photoionization cross-section exhibits a maximum for a photon energy of about 0.9 eV. This finding indicates a photo-thermal mechanism of photovoltage, i.e., photo-induced transitions between surface state levels and the subsequent thermal ejection of electrons from the upper level into the conduction band.

  1. Micro structuration of gaas surface by wet etching: towards a specific surface behavior.

    PubMed

    Bienaime, Alex; Elie-Caille, Celine; Leblois, Therese

    2012-08-01

    Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this application, in several solutions. This paper focuses on the micro/nanostructuration of the sensing surface to increase the sensor sensitivity. Indeed, this active surface will be biofunctionalized to operate in biological liquid media in view of biomolecules detection. Several experimental conditions of etching bath composition, concentration and temperature were examined to obtain a large variety of geometrical surfaces topographies and roughness. According to the orientation dependence of the chemical etching process, the experiments were also performed on various GaAs crystal plates. The bath 1 H3PO4:9 H2O2:1 H2O appeared to be particularly adapted to the fabrication of the GaAs microstructured membrane: indeed, the bath is highly stable, anisotropic, and, as a function of temperature, it allows the production of a large variety of GaAs surface topographies.

  2. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect

    Bietti, Sergio Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano; Fedorov, Alexey

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  3. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  4. Sulfur-mediated palladium catalyst immobilized on a GaAs surface

    SciTech Connect

    Shimoda, M.; Konishi, T.; Nishiwaki, N.; Yamashita, Y.; Yoshikawa, H.

    2012-06-15

    We present a hard x-ray photoelectron spectroscopy study on the preparation process of palladium catalyst immobilized on an S-terminated GaAs(100) surface. It is revealed that Pd(II) species are reduced on the GaAs surface and yield Pd nanoparticles during the process of Pd immobilization and the subsequent heat treatment. A comparison with the results on GaAs without S-termination suggests that the reduction of Pd is promoted by hydroxy groups during the Pd immobilization and by S during the heat treatment.

  5. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  6. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  7. Nanoscale footprints of self-running gallium droplets on GaAs surface.

    PubMed

    Wu, Jiang; Wang, Zhiming M; Li, Alvason Z; Benamara, Mourad; Li, Shibin; Salamo, Gregory J

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

  8. Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

    PubMed Central

    Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

  9. Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation

    NASA Astrophysics Data System (ADS)

    Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S.; Alperovich, V. L.

    2016-08-01

    The thermal roughening of epitaxial GaAs film surface is studied under anneals at temperatures 700-775 °C in the presence of a saturated Ga-As melt. Surface roughening consists in the formation of spiral “inverted pyramids” on the initially flat surface due to the step-flow sublimation induced by screw dislocations. The observed roughening indicates that, despite the presence of As and Ga vapors provided by the melt, the annealing conditions are shifted from equilibrium towards sublimation.

  10. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.; Beskin, I.

    2014-05-05

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  11. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  12. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  13. The Influence of Surface Topography and Surface Chemistry on the Anti-Adhesive Performance of Nanoporous Monoliths.

    PubMed

    Eichler-Volf, Anna; Xue, Longjian; Dornberg, Gregor; Chen, He; Kovalev, Alexander; Enke, Dirk; Wang, Yong; Gorb, Elena V; Gorb, Stanislav N; Steinhart, Martin

    2016-08-31

    We designed spongy monoliths allowing liquid delivery to their surfaces through continuous nanopore systems (mean pore diameter ∼40 nm). These nanoporous monoliths were flat or patterned with microspherical structures a few tens of microns in diameter, and their surfaces consisted of aprotic polymer or of TiO2 coatings. Liquid may reduce adhesion forces FAd; possible reasons include screening of solid-solid interactions and poroelastic effects. Softening-induced deformation of flat polymeric monoliths upon contact formation in the presence of liquids enhanced the work of separation WSe. On flat TiO2-coated monoliths, WSe was smaller under wet conditions than under dry conditions, possibly because of liquid-induced screening of solid-solid interactions. Under dry conditions, WSe is larger on flat TiO2-coated monoliths than on flat monoliths with a polymeric surface. However, under wet conditions, liquid-induced softening results in larger WSe on flat monoliths with a polymeric surface than on flat monoliths with an oxidic surface. Monolithic microsphere arrays show antiadhesive properties; FAd and WSe are reduced by at least 1 order of magnitude as compared to flat nanoporous counterparts. On nanoporous monolithic microsphere arrays, capillarity (WSe is larger under wet than under dry conditions) and solid-solid interactions (WSe is larger on oxide than on polymer) dominate contact mechanics. Thus, the microsphere topography reduces the impact of softening-induced surface deformation and screening of solid-solid interactions associated with liquid supply. Overall, simple modifications of surface topography and chemistry combined with delivery of liquid to the contact interface allow adjusting WSe and FAd over at least 1 order of magnitude. Adhesion management with spongy monoliths exploiting deployment (or drainage) of interfacial liquids as well as induction or prevention of liquid-induced softening of the monoliths may pave the way for the design of artificial

  14. Monolithic phononic crystals with a surface acoustic band gap from surface phonon-polariton coupling.

    PubMed

    Yudistira, D; Boes, A; Djafari-Rouhani, B; Pennec, Y; Yeo, L Y; Mitchell, A; Friend, J R

    2014-11-21

    We theoretically and experimentally demonstrate the existence of complete surface acoustic wave band gaps in surface phonon-polariton phononic crystals, in a completely monolithic structure formed from a two-dimensional honeycomb array of hexagonal shape domain-inverted inclusions in single crystal piezoelectric Z-cut lithium niobate. The band gaps appear at a frequency of about twice the Bragg band gap at the center of the Brillouin zone, formed through phonon-polariton coupling. The structure is mechanically, electromagnetically, and topographically homogeneous, without any physical alteration of the surface, offering an ideal platform for many acoustic wave applications for photonics, phononics, and microfluidics.

  15. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  16. XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Cossu, G.; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G. M.

    In order to prepare suitable surfaces for molecular beam epitaxy (MBE), sacrificial thin oxide layers on HCl etched GaAs(100) surfaces were grown by both air and UV/ozone exposure. Passive films were subsequently removed by vacuum thermal desorption to achieve surfaces that were smooth and clean on an atomic scale. The evolution of the surface chemical composition, as a function of vacuum desorption temperature, has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS results have evidenced for air and UV/ozone exposed GaAs(100) surfaces a relationship between desorption temperature and surface chemical composition; indeed, the oxide removal is temperature dependent and sequentially selective as follows: As 2O 3. AsO and Ga 2O 3. Furthermore, XPS results have shown that air-grown films have a chemical composition and thermal desorption behaviour different from UV/ozone treated materials. Indeed, these latter have an As 2O 3/Ga 2O 3 and an unoxidized As/Ga ratio close to unity for as grown and thermal treated at 580°C surfaces, respectively. By contrast, air-exposed GaAs(100) materials are Ga 2O 3-enriched and after vacuum thermal desorption treatments have never a stoichiometric composition(As (GaAs)/Ga (GaAs)= 1). Furthermore UV/ozone treated GaAs(100) surfaces subjected to a vacuum thermal treatment at 580°C, have a troublesome organic contamination level below XPS detectability, whereas from air-exposed surfaces, carbon is not completely thermally removable

  17. Aging and detergent washing effects of the surface of (001) and (110) GaAs passivated with hexadecanethiol

    NASA Astrophysics Data System (ADS)

    Moumanis, Kh.; Ding, X.; Dubowski, J. J.; Frost, E. H.

    2006-08-01

    We report on aging and detergent washing effects in GaAs wafers passivated with hexadecanethiol (HDT) [HS(CH2)15CH3]. The evolution of the photoluminescence (PL) signal from GaAs was measured at room temperature as a function of time, up to 1000h, for thiolated (001) GaAs that was solvent cleaned and etched using standard procedures, and for thiolated (110) GaAs that was obtained by cleaving in air. For 2h of thiolation time, the decay of the PL signal from (001) GaAs and (110) GaAs could be fitted, respectively, with double and single exponential functions. This indicates that at least two different types of non-adiative recombination centers (NRRC) form on the (001) surface. The overall density of surface states formed on (110) GaAs is significantly lower than those on (001) GaAs. A single exponential decay of the PL signal has been observed for 18h thiolated samples. The strong increase of the PL signal after detergent washing of (001) GaAs suggests that this treatment is effective in removal of some of the NRRC. The 19-fold enhancement of the PL signal, in comparison to that of the oxidized sample, has been obtained using the sample that, following the etching and detergent washing procedures, was thiolated with HDT.

  18. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  19. A novel surface modification technique for forming porous polymer monoliths in poly(dimethylsiloxane).

    PubMed

    Burke, Jeffrey M; Smela, Elisabeth

    2012-03-01

    A new method of surface modification is described for enabling the in situ formation of homogenous porous polymer monoliths (PPMs) within poly(dimethylsiloxane) (PDMS) microfluidic channels that uses 365 nm UV illumination for polymerization. Porous polymer monolith formation in PDMS can be challenging because PDMS readily absorbs the monomers and solvents, changing the final monolith morphology, and because PDMS absorbs oxygen, which inhibits free-radical polymerization. The new approach is based on sequentially absorbing a non-hydrogen-abstracting photoinitiator and the monomers methyl methacrylate and ethylene diacrylate within the walls of the microchannel, and then polymerizing the surface treatment polymer within the PDMS, entangled with it but not covalently bound. Four different monolith compositions were tested, all of which yielded monoliths that were securely anchored and could withstand pressures exceeding the bonding strength of PDMS (40 psi) without dislodging. One was a recipe that was optimized to give a larger average pore size, required for low back pressure. This monolith was used to concentrate and subsequently mechanical lyse B lymphocytes.

  20. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    NASA Astrophysics Data System (ADS)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  1. Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

    SciTech Connect

    Mauk, M.G.; Xu, S.; Arent, D.J.; Mertens, R.P.; Borghs, G.

    1989-01-16

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na/sub 2/S, KOH, RuCl/sub 3/, and K/sub 2/Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5 x 10/sup 6/ cm/s (untreated surface) to 10/sup 3/ cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ''dark'' current.

  2. Behavior of a surface applied radionuclide and a dye tracer in structured and repacked soil monoliths.

    PubMed

    Albrecht, A; Schultze, U; Bugallo, P Bello; Wydler, H; Frossard, E; Flühler, H

    2003-01-01

    There has been increasing evidence in recent years about the impact of soil structure on vadose zone hydrology and the distribution of surface applied chemical substances. We have carried out a combined dye and radionuclide tracer study on two monoliths from the same location, one structured and one repacked, as part of an ongoing study to investigate the link between preferential flow, leaching of surface applied substances and their distribution within the soil.A tracer solution containing 1300 Bq/L (58)Co and 0.31 micromol/L Sulforhodamine B (SB) was added with roughly constant irrigation during a period of three weeks. The dye served as a tracer for water movement within the soil and thus allowed linkage of the radiotracer ((58)Co) with the flow pattern. Both were monitored in the outflow and measured within profile sections after monolith disassembly. Preferential flow in the structured monolith promoted the bypass and transport of both tracers, although transport was impeded at depths greater than 30 cm by compacted soil and reduced hydraulic conductivity. Eighty four percent of radiocobalt and 8% of SB were found in the upper 4 cm of the structured monolith. The homogenized monolith, on the other hand, showed mostly chromatographic infiltration and a more efficient soil filtering capacity with 91% of radiocobalt and 20% SB residing in the upper 4 cm. Furthermore no tracer was found in the outflow of the homogenized monolith during normal to high irrigation or at greater depth within the monolith. We have related flow characteristics and sorption of radiotracers by quantifying dye distributions and radionuclide activities throughout the profiles. Activities within the flow paths are up to 20-times higher than those measured in the soil matrix, and a fraction of radiocobalt follows the dye tracer in spite of cobalt's low mobility. The dye can thus be used to trace radionuclide distribution within the soil block.

  3. Novel GaAs surface phases via direct control of chemical potential

    NASA Astrophysics Data System (ADS)

    Zheng, C. X.; Tersoff, J.; Tang, W. X.; Morreau, A.; Jesson, D. E.

    2016-05-01

    Using in situ surface electron microscopy, we show that the surface chemical potential of GaAs (001), and hence the surface phase, can be systematically controlled by varying temperature with liquid Ga droplets present as Ga reservoirs. With decreasing temperature, the surface approaches equilibrium with liquid Ga. This provides access to a regime where we find phases ultrarich in Ga, extending the range of surface phases available in this technologically important system. The same behavior is expected to occur for similar binary or multicomponent semiconductors such as InGaAs.

  4. Behavior of Al on Clean and Oxidized GaAs(110) Surfaces

    NASA Astrophysics Data System (ADS)

    Kim, Hyunwoo

    1993-04-01

    The adsorption of Al on clean and oxidized GaAs(110) surfaces was studied. The characteristics of an oxide surface formed in vacuum and during the chemical etching process of the tip have been investigated using the field desorption (FD) cleaning method and the retarding potential analyzer (RPA) equipped with an argon laser. The results obtained for the FD clean surface and on the oxidized surface are discussed in terms of the RPA threshold and work function change. The oxide films formed at relatively low temperatures on the GaAs(110) surface can easily be desorbed by FD. The intrinsic potential drops across the oxide surface disappear suddenly at a certain field value. This may indicate that the desorbed surface region is composed of a metallic species such as Ga. Changes in work function are observed but there is no change in the threshold values (Vth) with deposition of Al on the field-desorbed clean surface. The thick layers of Al on the oxidized surface completely cancel the effect of oxide on Vth, which decreases to the value of a metallic clean surface. In addition, the value of Vth decreases dramatically to that of a metallic clean surface by absorption of the laser beam on the oxidized surface, whereas only the thermal effect is seen on a metallic clean surface.

  5. Controlling the nanodot formation on GaAs surface during focused ion beam processing

    NASA Astrophysics Data System (ADS)

    Dhamodaran, S.; Ramkumar, J.

    2010-12-01

    GaAs processed using gallium-focused ion beams for the fabrication of photonic devices mostly results in gallium nanodots on the surface. These gallium nanodots may produce unwanted effects and deteriorate the optical and electrical properties of the devices. We have investigated the FIB processing of GaAs with and without exposure to an insulator-enhanced etching precursor gas (XeF2) to explore the use of XeF2 during GaAs processing. It is reported that without the gas, FIB processing results in nanodots on the surface that vary in size and density depending on processing parameters such as incident energy, beam current, angle and dwell time. Processing with insulator (XeF2)-enhanced etching gas irrespective of the process parameters eliminates the nanodots and results in a smooth surface, as characterized by scanning electron microscopy and atomic force microscopy. This method will be useful for surfaces which require dry processing without exposure to any wet chemical etching.

  6. Direct Measurement of Surface Defect Level Distribution Associated with GaAs Antiphase Boundaries

    SciTech Connect

    Xu, Q.; Hsu, J.W.

    1999-01-01

    Using an electrostatic force microscope, we measure surface contact potential (SCP) variations across antiphase boundaries (APBs) on GaAs films grown on Ge substrates. The SCP at the APBs is consistently and reproducibly measured to be 30 mV higher than that at GaAs domains. This is due to Fermi levels being pinned at different surface states. The identical electrical behavior observed for all APBs indicates that they are the lowest energy {l_brace}110{r_brace} orientation. The sign of observed Fermi level shift is consistent with a prevalence of Ga-Ga bonds at real {l_brace}110{r_brace} APBs. {copyright} {ital 1999} {ital The American Physical Society}

  7. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

    SciTech Connect

    Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro; Shimojo, Fuyuki

    2014-12-08

    Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

  8. Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

    PubMed

    Joyce, Hannah J; Parkinson, Patrick; Jiang, Nian; Docherty, Callum J; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Herz, Laura M; Johnston, Michael B

    2014-10-01

    Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurements of GaAs/AlGaAs core-shell nanowires using optical pump-terahertz probe spectroscopy: a noncontact and accurate probe of carrier transport on ultrafast time scales. The carrier lifetimes and mobilities both improved significantly with increasing AlGaAs shell thickness. Remarkably, optimized GaAs/AlGaAs core-shell nanowires exhibited electron mobilities up to 3000 cm(2) V(-1) s(-1), reaching over 65% of the electron mobility typical of high quality undoped bulk GaAs at equivalent photoexcited carrier densities. This points to the high interface quality and the very low levels of ionized impurities and lattice defects in these nanowires. The improvements in mobility were concomitant with drastic improvements in photoconductivity lifetime, reaching 1.6 ns. Comparison of photoconductivity and photoluminescence dynamics indicates that midgap GaAs surface states, and consequently surface band-bending and depletion, are effectively eliminated in these high quality heterostructures.

  9. Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum.

    PubMed

    Kent, Tyler J; Edmonds, Mary; Chagarov, Evgueni; Droopad, Ravi; Kummel, Andrew C

    2013-12-28

    The nucleation and passivation of oxide deposition was studied on defect-free GaAs (110) surfaces to understand passivation of surfaces containing only III-V heterobonds. The passivation process on GaAs (110) was studied at the atomic level using scanning tunneling microscopy while the electronic structure was determined by scanning tunneling spectroscopy (STS). The bonding of the oxidant and reductant were modeled with density functional theory. To avoid Fermi level pinning during gate oxide atomic layer deposition, a dual passivation procedure was required using both a reductant, trimethylaluminum (TMA), and an oxidant, O2 or H2O. Dosing GaAs (110) with TMA resulted in the formation of an ordered complete monolayer of dimethylaluminum which passivates the group V dangling bonds but also forms metal-metal bonds with conduction band edge states. These edge states were suppressed by dosing the surface with oxidants O2 or H2O which selectively react with group III-aluminum bonds. The presence of an ordered Al monolayer with a high nucleation density was indirectly confirmed by XPS and STS. PMID:24387387

  10. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  11. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  12. In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption

    NASA Astrophysics Data System (ADS)

    Hayase, Kazuya; Nishitani, Tomohiro; Suzuki, Katsunari; Imai, Hironobu; Hasegawa, Jun-ichi; Namba, Daiki; Meguro, Takashi

    2013-06-01

    We have used surface photo-absorption (SPA) to investigate the formation of negative electron affinity (NEA) surfaces on p-GaAs during the Yo-Yo method, under an alternating supply of Cs and O2. The SPA spectra showed that the surface during the first Cs step was different from those in the following Cs and O2 steps. This suggests that the surface structure did not change after the initial surface was formed, indicating that there could be two Cs adsorption sites on the GaAs surface, which is different from previously proposed models.

  13. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  14. Influence of magnetic field on 1/f noise in GaAs resistors without surface effects

    SciTech Connect

    Song, M.H.; Birbas, A.N.; van der Ziel, A.; van Rheenen, A.D.

    1988-07-15

    The influence on magnetic field on 1/f noise in a planar GaAs resistor grown by molecular-beam epitaxy and without surface effects was investigated experimentally. The experimental results can be explained by the number fluctuation model but not by the mobility fluctuation model. Previously, experimental results indicating number fluctuation type of 1/f noise were mostly attributed to the surface effects associated with the particular structures used for the experiments. In our device the surface effects were diminished so that the fluctuations of the bulk current could be considered to produce the 1/f noise.

  15. STM analysis of defects at the GaAs(001)-c(4 × 4) surface

    NASA Astrophysics Data System (ADS)

    Bruhn, Thomas; Fimland, Bjørn-Ove; Esser, Norbert; Vogt, Patrick

    2013-11-01

    Atomic structure models of semiconductor surfaces consider usually ideal models based on density functional theory calculations. In reality, however, semiconductor surfaces exhibit a variety of defects which deviate from this ideal surface structure. Depending on their specific nature and amount, these defects can contribute significantly to the total energy of the surface. Furthermore, the electronic properties and consequently their specific reactivity towards adsorption processes can be modified significantly due to the existence of surface defects. Here, we present an analysis of different kinds of defects at the GaAs(001)-c(4 × 4) surface reconstruction. The surfaces were prepared by thermal decapping of GaAs(001) epilayers grown by molecular beam epitaxy and capped by an amorphous As cap. High resolution measurements with scanning tunneling microscopy were performed at room temperature and allowed the identification and atomic analysis of several different kinds of surface defects. Apart from other defects we found indications that approximately 3% of the surface dimers are incomplete, consisting only of one As atom instead of two.

  16. GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Junji; Nanbu, Kazuo; Ishikawa, Tomonori; Kondo, Kazuo

    1988-01-01

    GaAs surface cleaning by thermal oxidation and sublimation prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate and epitaxial layer interface. The carrier depletion between the substrate and epitaxial films, measured by a C-V carrier profiling technique, was shown to decrease significantly with an increase in the thickness of the thermal oxidation. The concentration of carbon contamination near the substrate-epitaxial interface was measured using secondary ion mass spectroscopy. The carbon concentration correlated very well with the carrier depletion. Therefore, the main origin of the carrier depletion is believed to be the carbon concentration of the initial growth surface. Based on these results, the thermal oxidation and sublimation of a semi-insulating GaAs substrate was successfully applied to improve the mobility and sheet concentration of the two-dimensional electron gas in selectively doped GaAs/N-Al0.3Ga0.7As heterostructures with very thin GaAs buffer layers.

  17. Grafting zwitterionic polymer onto cryogel surface enhances protein retention in steric exclusion chromatography on cryogel monolith.

    PubMed

    Tao, Shi-Peng; Zheng, Jie; Sun, Yan

    2015-04-10

    Cryogel monoliths with interconnected macropores (10-100μm) and hydrophilic surfaces can be employed as chromatography media for protein retention in steric exclusion chromatography (SXC). SXC is based on the principle that the exclusion of polyethylene glycol (PEG) on both a hydrophilic chromatography surface and a protein favors their association, leading to the protein retention on the chromatography surface. Elution of the retained protein can be achieved by reducing PEG concentration. In this work, the surface of polyacrylamide-based cryogel monolith was modified by grafting zwitterionic poly(carboxybetaine methacrylate) (pCBMA), leading the increase in the surface hydrophilicity. Observation by scanning electron microscopy revealed the presence of the grafted pCBMA chain clusters on the cryogel surface, but pCBMA grafting did not result in the changes of the physical properties of the monolith column, and the columns maintained good recyclability in SXC. The effect of the surface grafting on the SXC behavior of γ-globulin was investigated in a wide flow rate range (0.6-12cm/min). It was found that the dynamic retention capacity increased 1.4-1.8 times by the zwitterionic polymer grafting in the flow rate range of 1.5-12cm/min. The mechanism of enhanced protein retention on the zwitterionic polymer-grafted surface was proposed. The research proved that zwitterionic polymer modification was promising for the development of new materials for SXC applications.

  18. Grafting zwitterionic polymer onto cryogel surface enhances protein retention in steric exclusion chromatography on cryogel monolith.

    PubMed

    Tao, Shi-Peng; Zheng, Jie; Sun, Yan

    2015-04-10

    Cryogel monoliths with interconnected macropores (10-100μm) and hydrophilic surfaces can be employed as chromatography media for protein retention in steric exclusion chromatography (SXC). SXC is based on the principle that the exclusion of polyethylene glycol (PEG) on both a hydrophilic chromatography surface and a protein favors their association, leading to the protein retention on the chromatography surface. Elution of the retained protein can be achieved by reducing PEG concentration. In this work, the surface of polyacrylamide-based cryogel monolith was modified by grafting zwitterionic poly(carboxybetaine methacrylate) (pCBMA), leading the increase in the surface hydrophilicity. Observation by scanning electron microscopy revealed the presence of the grafted pCBMA chain clusters on the cryogel surface, but pCBMA grafting did not result in the changes of the physical properties of the monolith column, and the columns maintained good recyclability in SXC. The effect of the surface grafting on the SXC behavior of γ-globulin was investigated in a wide flow rate range (0.6-12cm/min). It was found that the dynamic retention capacity increased 1.4-1.8 times by the zwitterionic polymer grafting in the flow rate range of 1.5-12cm/min. The mechanism of enhanced protein retention on the zwitterionic polymer-grafted surface was proposed. The research proved that zwitterionic polymer modification was promising for the development of new materials for SXC applications. PMID:25757821

  19. Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

    PubMed

    Helfrich, Mathieu; Gröger, Roland; Förste, Alexander; Litvinov, Dimitri; Gerthsen, Dagmar; Schimmel, Thomas; Schaadt, Daniel M

    2011-01-01

    In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

  20. Regeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes.

    PubMed

    Lacour, Vivien; Elie-Caille, Céline; Leblois, Thérèse; Dubowski, Jan J

    2016-03-02

    Wet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This work provides an important view on the perspective of the development of a family of cost-effective GaAs-based biosensors designed for repetitive detection of a variety of biomolecules immobilized with dedicated antibody architectures.

  1. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  2. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Kang, M.; Wu, J. H.; Sofferman, D. L.; Beskin, I.; Chen, H. Y.; Thornton, K.; Goldman, R. S.

    2013-08-01

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  3. Structural Study of GaAs(001):In 4×2 Surface

    NASA Astrophysics Data System (ADS)

    Lee, T.-L.; Zegenhagen, J.; Lyman, P. F.; Bedzyk, M. J.

    1997-03-01

    In a STM and LEED investigation (U. Resch-Esser et al., JVST B 13, 1672 (1995)), the indium-terminated GaAs(001) surface exhibited a (4×2) reconstruction. Based on this study, a dimer model, similar to that proposed by Biegelsen et al. (PRB 41, 5701(1990)) for the (4×2) clean surface, was proposed. However, the detailed local structure of the In ad-atoms was not resolvable from the STM image. In this work, we applied in situ x-ray standing wave (XSW) measurements to determine the surface structure of the GaAs(001) upon the adsorption of In at low coverages. The (4×2)/c(8×2) In-terminated GaAs(001) surface (Θ_In = 0.2 ML) was prepared by MBE. The (004) XSW measurement showed that the In ad-atoms were located 1.61 Åabove the (004) diffraction planes. At higher In coverages (up to 0.6 ML) the In (004) coherent fraction was small. This is consistent with the ladder-type pattern observed by STM at Θ_In > 0.5 ML, which indicated that there were two coexisting surface structures. For Θ_In = 0.2 ML, we found that our off-normal XSW measurements did not agree with the model proposed by Resch-Esser et al.. This work is sponsored by DOE-BES No. W-31-109-ENG-38 and by NSF No. DMR-9632472.

  4. Direct Patterning of Organic Self-Assembled Monolayer (SAM) on GaAs Surfaces via Dip-Pen Nanolithography (DPN)

    NASA Astrophysics Data System (ADS)

    Xiong, Peng; Keiper, Timothy; Wang, Xiaolei; Zhao, Jianhua

    2015-03-01

    Hybrid structures of functional molecules and solid-state (SS) materials have attracted extensive interest in surface nanoscience and molecular electronics. The formation and micro/nano patterning of organic SAMs on SS surfaces are a key step in fabricating such devices. Here we report realization of high quality MHA SAMs on GaAs and direct formation of micro/nanoscale patterns of MHA SAM on the surface by micro-contact printing (μ CP) and DPN. The process begins with the preparation of an oxide-free surface of GaAs, for which we employed treatment by an ammonium polysulfide ((NH4)2 Sx) solution. The treatment strips native oxides from GaAs creating an atomic layer of sulfur covalently bonded to the fresh surface. Formation of high-quality SAMs of thiol molecules on GaAs then proceeds through exchange of the sulfur and the thiol terminal of the molecules. The effects of the sulfur-passivation and formation of MHA SAM on the treated surface were confirmed by XPS, HRTEM, and DPN. To the best of our knowledge, this is a first realization of direct DPN of nanoscale organic SAM on a semiconductor free of surface oxide. We further evidence the utility of the hybrid platform by demonstrating directed self-assembly of Au nanoparticles onto MHA/ODT SAM templates on GaAs.

  5. In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

    NASA Technical Reports Server (NTRS)

    Yao, Huade; Snyder, Paul G.

    1991-01-01

    A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

  6. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    NASA Astrophysics Data System (ADS)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2016-08-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  7. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning.

    PubMed

    Belz, Jürgen; Beyer, Andreas; Torunski, Torsten; Stolz, Wolfgang; Volz, Kerstin

    2016-04-01

    The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials.

  8. Application of KrCI excilamp for cleaning GaAs surfaces using atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Tarasenko, Victor F.; Kagadei, Valerii A.; Lomaev, Mikhail I.; Panchenko, Alexei N.; Proskurovsky, Dmitrii I.

    1998-06-01

    Novel single block process facility including UV excilamp and sources of atomic hydrogen is described. Circular sealed-off KrCl* excilamp emitting two intensive bands at 195 and 222 nm was used. The source of atomic hydrogen on the base of reflecting Penning arc discharge was placed in line with the lamp. Semiconducting structures were treated in an expanding effusion jet of atomic hydrogen. The possibility to realize the process of cleaning GaAs surface under joint action of atomic hydrogen and UV radiation has been investigated. Effect of UV radiation on the rate of removing oxide layer is found at low temperature (18 - 100 degree(s)C). The mechanism providing an explanation for this event is suggested. The possibility to realize GaAs surface cleaning using successive performing the procedures of the surface treatment by atomic hydrogen, its oxidation with UV- stimulation and additional treatment by atomic hydrogen was also studied. The sources of atomic hydrogen and UV radiation developed allows to improve cleaning control and provides a way of producing the surface with specified properties.

  9. Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

    SciTech Connect

    Schmidt, Christian B. Priyadarshi, Shekhar; Bieler, Mark; Tarasenko, Sergey A.

    2015-04-06

    We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which is the inverse spin Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields.

  10. LDA DFT simulations of an isolated silicon donor on the (110) surface of GaAs

    NASA Astrophysics Data System (ADS)

    Tilley, F. J.; Roy, Mervyn; Maksym, P. A.

    2014-06-01

    The convergence of the band gap state of a single silicon dopant on the (110) surface of GaAs was investigated. By simulating different sized super-cells we were able to show that a 3x4 super-cell provides a well converged calculation for modelling an isolated dopant, with the total energy being converged to 1 part in 1000. The local density of the silicon band gap state was then checked against a number of more intensive calculations and was found to be well converged, with an eigenvalue accurate to within 3 meV.

  11. Effect of Polishing Systems on Surface Roughness and Topography of Monolithic Zirconia.

    PubMed

    Goo, C L; Yap, Auj; Tan, Kbc; Fawzy, A S

    2016-01-01

    This study evaluated the effect of different chairside polishing systems on the surface roughness and topography of monolithic zirconia. Thirty-five monolithic zirconia specimens (Lava PLUS, 3M ESPE) were fabricated and divided into five groups of seven and polished with the following: Group 1 (WZ)-Dura white stone followed by Shofu zirconia polishing kit; Group 2 (SZ)-Shofu zirconia polishing kit; Group 3 (CE)-Ceramiste porcelain polishers; Group 4 (CM)-Ceramaster porcelain polishers; and Group 5 (KZ)-Komet ZR zirconia polishers. All specimens were ground with a fine-grit diamond bur prior to polishing procedures to simulate clinical finishing. Baseline and post-polishing profilometric readings were recorded and delta Ra values (difference in mean surface roughness before and after polishing) were computed and analyzed using one-way analysis of variance and Scheffe post hoc test (p<0.05). Representative scanning electron microscopy (SEM) images of the ground but unpolished and polished specimens were acquired. Delta Ra values ranged from 0.146 for CE to 0.400 for KZ. Delta Ra values for KZ, WZ, and SZ were significantly greater than for CE. Significant differences in delta Ra values were also observed between KZ and CM. The SEM images obtained were consistent with the profilometric findings. Diamond-impregnated polishing systems were more effective than silica carbide-impregnated ones in reducing the surface roughness of ground monolithic zirconia. PMID:26666390

  12. The role of d levels of substitutional magnetic impurities at the (110) GaAs surface

    NASA Astrophysics Data System (ADS)

    Mahani, M. R.; Pertsova, Anna; Islam, Fhokrul; Canali, C. M.

    2013-03-01

    The study of the spin of individual transition-metal dopants in a semiconductor host is an emergent field known as magnetic solotronics, bearing exciting prospects for novel spintronics devices at the atomic scale. Advances in different STM based techniques allowed experimentalists to investigate substitutional dopants at a semiconductor surface with unprecedented accuracy and degree of details. Theoretical studies based both on microscopic tight-binding (TB) models and DFT techniques have contributed in elucidating the experimental findings. In particular, for the case of Mn dopants on the (110) GaAs surface, TB models have provided a quantitative description of the properties of the associated acceptor states. Most of these TB calculations ignore dealing explicitly with the Mn d-levels and treat the associated magnetic moment as a classical vector. However recent STM experiments involving other TM impurities, such as Fe, reveal topographic features that might be related to electronic transitions within the d-level shell of the dopant. In this work we have included explicitly the d levels in the Hamiltonian. The parameters of the model have been extracted from DFT calculations. We have investigated the role that d levels play on the properties of the acceptor states of the doped GaAs(110) surface, and analyzed their implications for STM spectroscopy.

  13. Surface Science Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery

    SciTech Connect

    Shutthanandan, V.; Zhu, Zihua; Stutzman, Marcy L.; Hannon, Fay; Hernandez-Garcia, Carlos; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai; Hess, Wayne P.

    2012-06-12

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Several photocathode degradation processes are suspected, including defect formation by ion back bombardment, photochemistry of surface adsorbed species and irradiation-induced surface defect formation. To better understand the mechanisms of photocathode degradation, we have conducted surface and bulk analysis studies of two GaAs photocathodes removed from the FEL photoinjector after delivering electron beam for a few years. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF photoinjector were analyzed using Transmission Electron Microscopy (TEM) and SIMS. This analysis of photocathode degradation during nominal photoinjector operating conditions represents first steps towards developing robust new photocathode designs necessary for generating sub-micron emittance electron beams required for both fourth generation light sources and intense polarized CW electron beams for nuclear and high energy physics facilities.

  14. Evolution of Surface Morphology of Patterned GaAs(100) during Molecular Beam Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Kan, Hung-Chih; Shah, Sonam; Tadayyon-Eslami, Tabassom; Phaneuf, Raymond

    2003-03-01

    We report the results of an investigation of the evolution of the surface morphology during molecular beam epitaxial growth on a patterned GaAs(100) surface. The initial GaAs(100) surfaces were patterned lithographically with arrays of cylindrical pits whose diameters and center-to-center distances are varied in a combinatorial manner. Using atomic force microscopy (AFM), we characterized the evolution of the corrugation throughout the growth. We compare the measured height profiles with simulations from various continuum models[1]. This comparison allows us to discriminate between various continuum modes of growth. * Work supported by the Minta-Martin Foundation, the Laboratory for Physical Sciences, and an NSF-MRSEC, DMR 00-8008. Reference 1 Mehran Kardar, Giorgio Parisi, and Yi-Cheng Zhang, Physical Review Letters 56 (9), 889 (1986); Tao Sun, Hong Guo, and Martin Grant, Physical Review A 40 (11), 6763 (1989); Z.-W. Lai and S. Das Sarma, Physical Review Letters 66 (18), 2348 (1991); M. D. Johnson, C. Orme, A. W. Hunt et al., Physical Review Letters 72 (1), 116 (1994).

  15. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  16. Monolithic ZnO SAW (Surface Acoustic Waves) structures

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Pierret, R. F.

    1983-07-01

    ZnO-on-silicon surface acoustic wave devices have been fabricated and tested. Electronic erasure of a stored correlator reference was demonstrated, the effect of laser annealing on propagation loss was examined, preliminary ageing studies were performed, and a conceptually new mode conversion resonator configuration was reported.

  17. Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure

    NASA Astrophysics Data System (ADS)

    Lin, K. I.; Lin, H. C.; Tsai, J. T.; Cheng, C. S.; Lu, Y. T.; Hwang, J. S.; Chiu, P. C.; Chen, S. H.; Chyi, J. I.; Wang, T. S.

    2009-10-01

    Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density Ds is estimated as approximately 1.91×1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65Sb0.35 SIN+ structure is further demonstrated.

  18. Fabrication and characterization of the noble metal nanostructures on the GaAs surface

    NASA Astrophysics Data System (ADS)

    Gladskikh, Polina V.; Gladskikh, Igor A.; Toropov, Nikita A.; Vartanyan, Tigran A.

    2016-04-01

    Self-assembled silver, gold, and copper nanostructures on the monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current-voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 2, 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands of Au and Ag nanostructures caused by major transformations of the film morphology. While the as prepared films predominantly had a small scale labyrinth structure, after annealing well-separated nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.

  19. Structure of GaAs(001) surfaces: The role of electrostatic interactions

    SciTech Connect

    Northrup, J.E. ); Froyen, S. )

    1994-07-15

    We report first-principles total-energy calculations for the GaAs(001) surface. Our results indicate that the 2[times]4 reconstruction corresponds to the [beta]2(2[times]4) structure, which exhibits two As dimers in the top layer and a third As dimer in the third layer. This structure has a lower surface energy than the [beta](2[times]4) model, which has three As dimers in the top layer. We also find that a model recently proposed by Skala [ital et] [ital al]. [Phys. Rev. B [bold 48], 9138 (1993)] for the structure of the Ga-rich 4[times]2 phase is energetically unfavorable. From our results we conclude that electrostatic interactions between the charged building blocks of polar semiconductor surfaces play an important role in determining the equilibrium structure. We introduce a simple model for estimating these interactions.

  20. A Novel Technique for Detecting Trace Residues of Contamination on GaAs Surfaces before MBE Growth

    NASA Astrophysics Data System (ADS)

    Lee, Jerry; West, Ken; Baldwin, Kirk; Pfeiffer, Loren

    2012-02-01

    To prepare a GaAs substrate for molecular beam epitaxial (MBE) growth, the nominal ˜ 3 nm native oxide is typically thermally desorbed in vacuum. To test the completeness of this desorption, we describe a technique, which combines MBE, thermal desorption, atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS), for detecting trace residues of contamination on (100) GaAs surfaces before MBE growth. At all desorption temperatures in the range 600 C to 665 C, our RHEED measurements show that the native oxide is largely desorbed within 2 min. However, the SIMS and AFM data indicate that a residue of sub-monolayer oxide invariably remains on the GaAs (100) surface, and tenaciously resists all further attempts at its removal by thermal desorption. Since thermal desorption of the native oxide has long been the standard technique before MBE growth, we suggest that all MBE growth of GaAs heterostructures has been through a partial monolayer of native oxide. We believe that this is the likely reason for the failure of high quality attempts at MBE growth of GaAs after lithographic patterning on a previously grown MBE structure.

  1. Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate

    NASA Astrophysics Data System (ADS)

    Nunes, O. A. C.

    2014-06-01

    We study the interaction of Dirac Fermions in monolayer graphene on a GaAs substrate in an applied electric field by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (piezoelectric acoustical (PA)) and of the intrinsic deformation potential of acoustical phonons in graphene (deformation acoustical (DA)). We find that provided the dc field exceeds a threshold value, emission of piezoelectric (PA) and deformation (DA) acoustical phonons can be obtained in a wide frequency range up to terahertz at low and high temperatures. We found that the phonon amplification rate RPA ,DA scales with TBGS -1 (S =PA,DA), TBGS being the Block -Gru¨neisen temperature. In the high-T Block -Gru¨neisen regime, extrinsic PA phonon scattering is suppressed by intrinsic DA phonon scattering, where the ratio RPA/RDA scales with ≈1/√n , n being the carrier concentration. We found that only for carrier concentration n ≤1010cm-2, RPA/RDA>1. In the low-T Block -Gru¨neisen regime, and for n =1010cm-2, the ratio RPA/RDA scales with TBGDA/TBGPA≈7.5 and RPA/RDA>1. In this regime, PA phonon dominates the electron scattering and RPA/RDA<1 otherwise. This study is relevant to the exploration of the acoustic properties of graphene and to the application of graphene as an acoustical phonon amplifier and a frequency-tunable acoustical phonon device.

  2. On-column enrichment and surface-enhanced Raman scattering detection in nanoparticles functionalized porous capillary monolith.

    PubMed

    Jiang, Qian; Zeng, Tian; Yang, Song; Chen, Qian; Chen, Lei; Ye, Yong; Zhou, Ji; Xu, Shuping

    2015-04-15

    A monolithic column functionalized with gold nanoparticles (GNPs) was designed to provide ultrasensitive detection with surface-enhanced Raman scattering (SERS). The monolithic column based on poly (glycidyl methacrylate-co-ethylene dimethacrylate) (GMA-co-EDMA) was served as the enrichment sorbent to concentrate GNPs and targets. We found that 60 nm GNPs-functionalized monolithic columns demonstrated the best SERS enhancement, and the lowest detectable concentration for PATP and CV could be achieved at 10(-7) and 10(-11) M, respectively. Moreover, the columns exhibit a good reproducibility in both spot-to-spot (∼10%) and batch-to-batch (∼15%). The SERS monolithic column with a high sensitivity and reproducibility has a great potential in the field-based rapid detection of targets in complex real-world samples. PMID:25681809

  3. Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Wu, Y.

    1988-01-01

    A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

  4. Porous polymer monoliths with large surface area and functional groups prepared via copolymerization of protected functional monomers and hypercrosslinking.

    PubMed

    Maya, Fernando; Svec, Frantisek

    2013-11-22

    A new approach to the preparation of porous polymer monoliths possessing both large surface area and functional groups has been developed. The chloromethyl groups of poly(styrene-co-4-acetoxystyrene-co-vinylbenzyl chloride-co-divinylbenzene) monolith enable post-polymerization hypercrosslinking catalyzed by ferric chloride in dichloroethane leading to a multitude of small pores thus enhancing the surface area. The acetoxy functionalities are easily deprotected using hydrazine to produce polar phenolic hydroxyl groups, which would be difficult to obtain by direct copolymerization of hydroxyl-containing monomers. The hypercrosslinking and deprotection reactions as well as their sequence were studied in detail with bulk polymer monoliths containing up to 50% 4-acetoxystyrene and its progress monitored by infrared spectrometry and nitrogen adsorption/desorption measurements. No significant difference was found for both possible successions. All monoliths were also prepared in a capillary column format, then deprotected and hypercrosslinked. Capillary columns were tested for the separation of small molecules using reversed phase and normal phase chromatographic modes. For polymer monoliths containing 50% deprotected 4-acetoxystyrene, column efficiencies of 40,000 plates/m for benzene in reversed phase mode and 31,800 plates/m for nitrobenzene in normal phase mode, were obtained. The percentage of hydroxyl groups in the monoliths enables modulation of polarity of the stationary phase. They also represent functionalities that are potentially suitable for further modifications and formation of new types of stationary phases for liquid chromatography.

  5. In-situ NAP XPS studies of dissociative water adsorption on GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Ptasinska, Sylwia; Zhang, Xueqiang

    2014-03-01

    In current semiconductor-based technology it is important to design and fabricate new materials in order to achieve specific well-defined properties and functionalities. Before such systems can be applied they first need to be understood, refined and controlled. Therefore, a basic knowledge about molecule/semiconductor surface interfaces is essential. In the present work dissociative water adsorption on the GaAs(100) surface is monitored using X-ray Photoelectron Spectroscopy (XPS) performed in situ under near ambient conditions. Firstly, the crystal surface is exposed to water vapor pressures ranging from UHV to 0.5 kPa. At elevated pressures an increase of oxygenation and hydroxylation of Ga surface atoms has been observed in the Ga2p XPS spectra. Moreover, intense signals obtained from molecularly adsorbed water molecules or water molecules adsorbed via hydrogen bond to surface OH groups have been also observed in the O1s spectra. Finally, the crystal surface is annealed up to 700 K at water vapor pressure of 0.01 kPa, which leads to desorption of physisorbed water molecules and further increase of surface oxidation. The research described herein was supported by the Division of Chemical Sciences, Geosciences and Biosciences, Basic Energy Sciences, Office of Science, United States Department of Energy through grant number DE-FC02-04ER15533.

  6. Synthesis and Surface Reactivity of Vinylized Macroporous Silica Monoliths: One-Pot Hybrid versus Postsynthesis Grafting Strategies.

    PubMed

    El-Debs, Racha; Cadoux, Franck; Bois, Laurence; Bonhommé, Anne; Randon, Jérôme; Dugas, Vincent; Demesmay, Claire

    2015-10-27

    Different synthesis routes have been implemented to prepare macroporous monoliths with vinyl pendant groups and micrometric skeletons and through-pore sizes. A standard process combining the synthesis of a widely used (methyltrimethoxysilane/tetramethoxysilane) (MTMS/TMOS) hybrid silica monolith and the postsilanization with vinyltrimethoxysilane (VTMS) was used as reference material (Vgr-MTMS). An alternative "one-pot" procedure was used to obtain vinylized hybrid monoliths. Two VTMS/TMOS hybrid based monoliths were successfully prepared starting from 20% (w) and 80% (w/w) of VTMS, respectively, called 20-VTMS and 80-VTMS. Monoliths were characterized by SEM, nitrogen-adsorption isotherm, and (29)Si MAS NMR spectroscopy. One-pot synthesis allowed to obtain higher vinyl contents (15.9 and 61.5 mol % of Si atoms bonded to vinyl groups respectively for 20-VTMS and 80-VTMS) than for the postgrafted one (7.1%). Accessibility of vinyl groups was determined by the extent of bromination reactions followed by FTIR-ATR spectroscopy. Bromination with reaction yields were higher than 80% for all materials (80%, 85%, and 100% for 80-VTMS, 20-VTMS, and Vgr-MTMS respectively), with no diffusion issues The chemical reactivity of the pendant vinyl groups was investigated through radical-mediated thiol-ene reaction and radical-initiated bisulfite addition. Reaction yields for the two VTMS hybrid monoliths were quite lower (4-6%) than those obtained (about 50%) for the Vgr-MTMS monolith. The difference in reactivity was attributed to the steric hindrance of the vinyl moieties at the surface of hybrid materials. However, the lower reactivity of vinyl groups is compensated by their considerably higher surface density. Thus, hybrid monoliths are advantageous over their grafted counterparts, due to their higher hydrolytic stability and to the greater simplicity of the one-pot process. A chromatographic application exemplifies their interest and performances in separation science. PMID

  7. Synthesis and Surface Reactivity of Vinylized Macroporous Silica Monoliths: One-Pot Hybrid versus Postsynthesis Grafting Strategies.

    PubMed

    El-Debs, Racha; Cadoux, Franck; Bois, Laurence; Bonhommé, Anne; Randon, Jérôme; Dugas, Vincent; Demesmay, Claire

    2015-10-27

    Different synthesis routes have been implemented to prepare macroporous monoliths with vinyl pendant groups and micrometric skeletons and through-pore sizes. A standard process combining the synthesis of a widely used (methyltrimethoxysilane/tetramethoxysilane) (MTMS/TMOS) hybrid silica monolith and the postsilanization with vinyltrimethoxysilane (VTMS) was used as reference material (Vgr-MTMS). An alternative "one-pot" procedure was used to obtain vinylized hybrid monoliths. Two VTMS/TMOS hybrid based monoliths were successfully prepared starting from 20% (w) and 80% (w/w) of VTMS, respectively, called 20-VTMS and 80-VTMS. Monoliths were characterized by SEM, nitrogen-adsorption isotherm, and (29)Si MAS NMR spectroscopy. One-pot synthesis allowed to obtain higher vinyl contents (15.9 and 61.5 mol % of Si atoms bonded to vinyl groups respectively for 20-VTMS and 80-VTMS) than for the postgrafted one (7.1%). Accessibility of vinyl groups was determined by the extent of bromination reactions followed by FTIR-ATR spectroscopy. Bromination with reaction yields were higher than 80% for all materials (80%, 85%, and 100% for 80-VTMS, 20-VTMS, and Vgr-MTMS respectively), with no diffusion issues The chemical reactivity of the pendant vinyl groups was investigated through radical-mediated thiol-ene reaction and radical-initiated bisulfite addition. Reaction yields for the two VTMS hybrid monoliths were quite lower (4-6%) than those obtained (about 50%) for the Vgr-MTMS monolith. The difference in reactivity was attributed to the steric hindrance of the vinyl moieties at the surface of hybrid materials. However, the lower reactivity of vinyl groups is compensated by their considerably higher surface density. Thus, hybrid monoliths are advantageous over their grafted counterparts, due to their higher hydrolytic stability and to the greater simplicity of the one-pot process. A chromatographic application exemplifies their interest and performances in separation science.

  8. Nano-pits on GaAs (1 0 0) surface: Preferential sputtering and diffusion

    NASA Astrophysics Data System (ADS)

    Kumar, Tanuj; Panchal, Vandana; Kumar, Ashish; Kanjilal, D.

    2016-07-01

    Self organized nano-structure array on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. Therefore, the control over their dimensions is gaining scientific interest in last couple of decades. In this work, fabrication of pits of nano-dimensions is carried out on the GaAs (1 0 0) surface using 50 keV Ar+ at normal incidence. Variation in fluence from 3 × 1017 ions/cm2 to 5 × 1018 ions/cm2 does not make a remarkable variation in the dimension of pits such as size and depth, which is confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). However the simultaneous dots formation is observed along with the pits at higher fluences. Average size of pits is found to be of 22 nm with depth of 1-5 nm for the used fluences. The importance of preferential sputtering of 'As' as compared to 'Ga' is estimated using energy dispersive X-ray analysis (EDX). The observed alteration in near surface composition shows the Ga enrichment of surface, which is not being much affected by variation in fluence. The growth evolution of pits and dots for the used experimental conditions is explained on the basis of ion beam induced preferential sputtering and surface diffusion.

  9. Surface chemistry of new As precursors for MOVPE and MOMBE: phenylarsine and tertiarybutylarsine on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Kaul, P.; Schütze, A.; Kohl, D.; Brauers, A.; Weyers, M.

    1992-10-01

    Surface reactions of PhAs and tBAs on unoxidized and thermally oxidized GaAs(100) were studied in an UHV chamber using a differentially pumped quadrupole mass spectrometer and a molecular beam nozzle. A special sample holder allowed periodic switching between an unoxidized and an oxidized surface to observe small differences in reactivity. The following assumptions are compatible with the experimental results: Adsorption of PhAs or tBAs on GaAs(100) followed by rupture of the As-H bonds is the first step. Most of the organometallic radicals desorb from the surface, a fraction decomposes further by rupture of the As-C bond. The organic radicals react with the surface hydrogen and desorb as benzene and butane or butene, respectively. Low values of the activation energies ( ≤ 0.4 eV) for the different reaction steps suggest a diffusion of PhAs or tBAs on the surface as the rate limiting step for the overall reaction. A comparison of oxidized and unoxidized surfaces exposed to a constant gas flux of PhAs or tBAs revealed a reduced reactivity on the oxidized surface. Thermodesorption experiments with oxidized GaAs(100) surfaces showed that the desorption temperature of GA 2O decreased from 862 K without tBAs to 835 K in a tBAs flux. During this annealing process a reaction between the surface oxide and organic radicals from the tBAs decomposition seems to form a highly stable contamination layer which was observed by X-ray photoelectron spectroscopy. This contamination of the surface can be avoided by annealing in UHV without any As-species present and monitoring the Ga 2O flux from the surface with a mass spectrometer because non-stoichiometric evaporation of GaAs occurs only after desorption of the oxide.

  10. Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

    SciTech Connect

    Samsonenko, Yu. B. Cirlin, G. E.; Egorov, V. A.; Polyakov, N. K.; Ulin, V. P.; Dubrovskii, V. G.

    2008-12-15

    The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production of epitaxial nanowire crystals in a system with a large lattice mismatch. The growth on porous substrates, the role of the surface orientation, high-temperature annealing, and presence of an oxide layer at the surface, and some other effects typical of growth of III-V nanowire crystals on the Si surface are studied and analyzed. Intense emission from the array of GaAs nanowire crystals grown on the Si (111) surface is observed.

  11. Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions

    NASA Astrophysics Data System (ADS)

    Bischoff, L.; Böttger, R.; Heinig, K.-H.; Facsko, S.; Pilz, W.

    2014-08-01

    Self-organization of surface patterns on GaAs under irradiation with heavy polyatomic Au ions has been observed. The patterns depend on the ion mass, and the substrate temperature as well as the incidence angle of the ions. At room temperature, under normal incidence the surface remains flat, whereas above 200 °C nanodroplets of Ga appear after irradiation with monatomic, biatomic as well as triatomic Au ions of kinetic energies in the range of 10-30 keV per atom. In the intermediate temperature range of 100-200 °C meander- and dot-like patterns form, which are not related to Ga excess. Under oblique ion incidence up to 45° from the surface normal, at room temperature the surface remains flat for mon- and polyatomic Au ions. For bi- and triatomic ions in the range of 60° ≤ α ≤ 70° ripple patterns have been found, which become shingle-like for α ≥ 80°, whereas the surface remains flat for monatomic ions.

  12. Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate

    SciTech Connect

    Nunes, O. A. C.

    2014-06-21

    We study the interaction of Dirac Fermions in monolayer graphene on a GaAs substrate in an applied electric field by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (piezoelectric acoustical (PA)) and of the intrinsic deformation potential of acoustical phonons in graphene (deformation acoustical (DA)). We find that provided the dc field exceeds a threshold value, emission of piezoelectric (PA) and deformation (DA) acoustical phonons can be obtained in a wide frequency range up to terahertz at low and high temperatures. We found that the phonon amplification rate R{sup PA,DA} scales with T{sub BG}{sup S−1} (S=PA,DA), T{sub BG}{sup S} being the Block−Gru{sup ¨}neisen temperature. In the high-T Block−Gru{sup ¨}neisen regime, extrinsic PA phonon scattering is suppressed by intrinsic DA phonon scattering, where the ratio R{sup PA}/R{sup DA} scales with ≈1/√(n), n being the carrier concentration. We found that only for carrier concentration n≤10{sup 10}cm{sup −2}, R{sup PA}/R{sup DA}>1. In the low-T Block−Gru{sup ¨}neisen regime, and for n=10{sup 10}cm{sup −2}, the ratio R{sup PA}/R{sup DA} scales with T{sub BG}{sup DA}/T{sub BG}{sup PA}≈7.5 and R{sup PA}/R{sup DA}>1. In this regime, PA phonon dominates the electron scattering and R{sup PA}/R{sup DA}<1 otherwise. This study is relevant to the exploration of the acoustic properties of graphene and to the application of graphene as an acoustical phonon amplifier and a frequency-tunable acoustical phonon device.

  13. 30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Contolatis, A.; Sokolov, V.; Chao, C.

    1986-01-01

    An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

  14. Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method.

    PubMed

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Şimşek, Veli

    2016-07-01

    A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.

  15. Raman-scattering and optical studies of argon-etched GaAs surfaces

    SciTech Connect

    Feng, G.F.; Zallen, R. ); Epp, J.M.; Dillard, J.G. )

    1991-04-15

    We have studied the structual damage in low-energy argon-ion-bombarded (ion-etched) GaAs using Raman scattering and ultraviolet reflectivity. When combined with post-bombardment sequential chemical etching, the Raman results reveal a graded depth profile of the damage layer, with a nearly linear damage dropoff with depth. The total damage-layer thickness is about 600 A for high-fluence bombardment with 3.89-keV Ar{sup +} ions. The spectral effects produced by argon etching are very different from those produced by high-energy ion implantation. The longitudinal-optic Raman line seen for argon-etched GaAs is not shifted and broadened as in ion-implanted GaAs. More striking are the results of the reflectivity measurements. For argon-etched GaAs, the electronic interband peaks are both broadened and strongly red shifted relative to the crystal peaks; for ion-implanted GaAs, only the broadening occurs. Distinct nanocrystals, which account for the effects seen in ion-implanted GaAs, are evidently absent in argon-etched GaAs. Instead, the damage layer caused by argon etching appears to be characterized by a very high density of point defects, which previous work suggests may be arsenic vacancies.

  16. Electrical and optical characterization of surface passivation in GaAs nanowires.

    PubMed

    Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing; Huang, Ningfeng; Chen, Chun-Chung; Theiss, Jesse; Bushmaker, Adam W; Lalumondiere, Stephen; Yeh, Ting-Wei; Povinelli, Michelle L; Zhou, Chongwu; Dapkus, P Daniel; Cronin, Stephen B

    2012-09-12

    We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

  17. An electrically-driven GaAs nanowire surface plasmon source.

    PubMed

    Fan, Pengyu; Colombo, Carlo; Huang, Kevin C Y; Krogstrup, Peter; Nygård, Jesper; Fontcuberta I Morral, Anna; Brongersma, Mark L

    2012-09-12

    Over the past decade, the properties of plasmonic waveguides have extensively been studied as key elements in important applications that include biosensors, optical communication systems, quantum plasmonics, plasmonic logic, and quantum-cascade lasers. Whereas their guiding properties are by now fairly well-understood, practical implementation in chipscale systems is hampered by the lack of convenient electrical excitation schemes. Recently, a variety of surface plasmon lasers have been realized, but they have not yet been waveguide-coupled. Planar incoherent plasmonic sources have recently been coupled to plasmonic guides but routing of plasmonic signals requires coupling to linear waveguides. Here, we present an experimental demonstration of electrically driven GaAs nanowire light sources integrated with plasmonic nanostrip waveguides with a physical cross-section of 0.08λ(2). The excitation and waveguiding of surface plasmon-polaritons (SPPs) is experimentally demonstrated and analyzed with the help of full-field electromagnetic simulations. Splitting and routing of the electrically generated SPP signals around 90° bends are also shown. The realization of integrated plasmon sources greatly increases the applicability range of plasmonic waveguides and routing elements.

  18. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    SciTech Connect

    García Núñez, C. Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J.; Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P.

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  19. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    SciTech Connect

    Valco, G.J.; Kapoor, V.J.

    1985-06-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min. 9 references.

  20. In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

    NASA Astrophysics Data System (ADS)

    Katkov, A. V.; Wang, C. C.; Chi, J. Y.

    2013-05-01

    The effect of various Sb-terminated GaAs(001) templates on the growth of InAs was investigated by varying the As flux. The growth of InAs under In-rich growth conditions on Sb-terminated GaAs(001)-(2×3), (2×4) and (2×8) templates was demonstrated to occur in the Stranski-Krastanov (SK) growth mode, in contrast to the Sb-free case, where the growth process follows the Franck-van der Merwe (FM) growth mechanism. The observed antimony dependent change of growth mode from FM to SK is qualitatively explained by the decrease of the surface energy of the growing InAs layer caused by the segregation of Sb on the surface of the InAs(001).

  1. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  2. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  3. Surface structure of GaAs(001)-(2 × 4) α, β and γ phases

    NASA Astrophysics Data System (ADS)

    Ichimiya, Ayahiko; Xue, Q.-K.; Hashizume, T.; Sakurai, T.

    1995-05-01

    The As-rich GaAs(001)-(2 × 4) α, β and γ phases grown by molecular-beam epitaxy (MBE) and migration enhanced epitaxy (MEE) have been investigated by field ion-scanning tunneling microscopy and in-situ reflection high-energy electron diffraction (RHEED). The high-resolution STM images show that the α, β and γ phases all have the same unit structure in the outermost surface layer which consists of two As dimers and two As dimer vacancies. The structure models are examined based on the STM observations and dynamical RHEED calculation. We propose a new structure model: The α phase is the two-As-dimer model proposed by Farrell and Palmstrom with relaxation incorporated by Northrup and Froyen. The β phase is the two-As-dimer model proposed by Chadi. The γ phase consists of the local structure same as the β phase and the open areas with a disordered As double-layer structure similar to that of the c(4 × 4) phase.

  4. Basic Study on the Radio Frequency Characteristics of the Transmission Lines Employing Periodically Perforated Ground Metal on GaAs Monolithic Microwave Integrated Circuit and Their Equivalent Ciruits

    NASA Astrophysics Data System (ADS)

    Yun, Young; Ju, Jeong-Gab; Kim, Hong Seung

    2011-01-01

    In this work, basic characteristics of transmission line employing periodically perforated ground metal (PPGM) were investigated using theoretical and experimental analysis. Concretely, bandwidth and impedance were investigated using theoretical analysis, and wavelength and effective permittivity were extracted from experimental results. In addition, insertion loss and isolation characteristics were investigated using equivalent circuit analysis. For simplification of design process, equivalent circuits for the PPGM cell were extracted, and all circuit parameters were expressed by closed-form equation. Above results indicate that the transmission line employing PPGM is a promising candidate for a development of matching and passive elements on monolithic microwave integrated circuit (MMIC) including wireless communication circuit and compound semiconducting devices such as high electron mobility transistor (HEMT), diamond field effect transistor (FET) and light emitting diode (LED).

  5. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    NASA Astrophysics Data System (ADS)

    Kim, Juho; Hwang, Jeongwoo; Song, Kwangsun; Kim, Namyun; Shin, Jae Cheol; Lee, Jongho

    2016-06-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  6. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    PubMed

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature.

  7. First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 × 2) surface

    NASA Astrophysics Data System (ADS)

    Akaishi, Akira; Funatsuki, Kenta; Ohtake, Akihiro; Nakamura, Jun

    2016-08-01

    Various atomic arrangements of the Mn-induced GaAs(001) surface, consisting of one Ga-As dimer and one Mn atom in the (2 × 2) unit, have been investigated by first-principles calculations. The most stable arrangement is reasonable in view of the classical electrostatic theory. It has been revealed that the topmost Ga-As dimers tend to be aligned along the [1\\bar{1}0] direction, while they are less ordered along the [110] direction. These anisotropic orderings, that is, anisotropic interactions, imply that the Mn atom, which is located between the Ga-As dimers, enhances the local electrostatic interaction between the dimers along the [1\\bar{1}0] direction, as a result of the dielectric anisotropy at the surface.

  8. STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states.

    PubMed

    Jancu, J-M; Girard, J-Ch; Nestoklon, M O; Lemaître, A; Glas, F; Wang, Z Z; Voisin, P

    2008-11-01

    We show that scanning tunneling microscopy (STM) images of subsurface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wave-function imaging. Atomic-resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting for both the buckled (110) surface and vacuum electronic properties. Splitting of the acceptor state due to buckling is shown to play a prominent role.

  9. Surface treatment effect on temperature-dependent properties of InGaP /GaAs heterobipolar transistors

    NASA Astrophysics Data System (ADS)

    Chen, Tzu-Pin; Fu, Ssu-I.; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2007-02-01

    Specific treatments of the base surface of InGaP /GaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

  10. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M.; Lin, Y. H.; Goldman, R. S.

    2013-08-19

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  11. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Nevedomskiy, V. N.; Bugrov, V. E.

    2015-11-15

    Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

  12. Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

    SciTech Connect

    Yang, Y.J.; Dziura, T.G.; Wang, S.C. ); Hsin, W.; Wang, S. Electronics Research Laboratory, University of California, Berkeley, California 94720 )

    1990-05-07

    We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

  13. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    NASA Astrophysics Data System (ADS)

    Chowdhury, Debasree; Ghose, Debabrata

    2016-11-01

    Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  14. Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, J. J. D.; West, K. W.; Baldwin, K. W.; Pfeiffer, L. N.

    2012-10-01

    To prepare a GaAs substrate for molecular beam epitaxial (MBE) growth, the nominal ˜3 nm native oxide is typically thermally desorbed into vacuum. To test the completeness and quality of this desorption, we describe a technique, which combines MBE, thermal desorption, atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS), for detecting roughness and trace residues of contamination on (100) GaAs surfaces before MBE growth. At all desorption temperatures in the range 600-665 °C, our RHEED measurements show that the native oxide is largely desorbed within 4 min. However, the SIMS and AFM data indicate that a residue of carbon invariably remains on the GaAs (100) surface, and tenaciously resists all further attempts at its removal by thermal desorption. Since thermal desorption of the native oxide has long been the standard technique for preparing GaAs substrates for MBE growth, we suggest that MBE growth on GaAs has in general been accomplished by epitaxially growing through a partial monolayer of carbon. We believe this is the likely reason for the generally unsatisfactory quality of GaAs MBE growth after lithographic patterning on previously MBE grown structures. Our AFM data also indicate that extended native oxide desorption times or high desorption temperatures not only are ineffective at removal of the carbon residue, but are always accompanied by additional strong roughening effects on the GaAs surface morphology. Finally, we demonstrate that smoother starting surfaces for MBE growth correlate well with higher two-dimensional carrier mobilities in the resulting AlGaAs/GaAs heterostructures.

  15. In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Ye, Liwang; Gougousi, Theodosia

    2014-09-01

    In situ attenuated total reflectance Fourier transform infrared spectroscopy was utilized to study the interface evolution during the atomic layer deposition (ALD) of HfO2 on GaAs surfaces using of tetrakis (dimethylamino) hafnium and H2O. The experiments were performed on chemical oxide and hydrogen fluoride etched GaAs(100) starting surfaces. For the deposition of HfO2 on chemical oxide GaAs surfaces at 275 °C, which corresponds to the optimal ALD process temperature, continuous arsenic oxide removal was observed for the first 20 ALD cycles. The oxide removal was more pronounced at the initial 1-2 cycles but nonetheless persisted, at a reduced rate, up to the 20th cycle. The substrate temperature was confirmed to affect the arsenic oxide removal; the rate was significant at temperatures above 250 °C while negligible below 200 °C.

  16. Laser-driven growth of silver nanoplates on p-Type GaAs substrates and their surface-enhanced raman scattering activity.

    SciTech Connect

    Sun, Y.; Pelton, M.

    2009-03-20

    Contact between aqueous solutions of silver nitrate (AgNO{sub 3}) and pristine surfaces of p-type gallium arsenide (GaAs) wafers results in essentially no reaction at room temperature and in the dark. The galvanic reactions between the GaAs wafers and AgNO{sub 3} can be triggered under illumination of laser beams with power densities higher than a critical value ({approx}15 mW/cm{sup 2} for a 630 nm laser), resulting in the growth of silver (Ag) nanoplates on the GaAs surface. The density and dimensions (including both thickness and edge length) of the resulting nanoplates can be readily tuned by controlling the growth time and laser power density. The as-grown Ag nanoplates on the substrates significantly enhance Raman signals of interesting molecules and serve as a new class of promising surface-enhanced Raman scattering substrates for sensitive chemical detection.

  17. Structure of GaSb layers grown on (111) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Babkevich, A. Yu.; Cowley, R. A.; Mason, N. J.; Shields, P. A.; Stadelman, T.; Brown, S.; Mannix, D.; Paul, D.

    2004-09-01

    The structure of GaSb layers with thicknesses of 70Å, 160Å, and 1260Å grown on GaAs (111) substrates by metal-organic vapor phase epitaxy has been studied by high-resolution x-ray diffraction. The lattice mismatch between the layer and the substrate is large and most of the misfit strain is taken up by a regular network of dislocations localized at the interface between the GaSb and the GaAs. The spacing between the dislocations is about 49Å along the [1¯1¯2] direction. We observe that the layers have both the ABC … and ACB … face-centered-cubic (fcc) domains with a domain size of about 1500Å. The presence of approximately the same volume of both the domains in the overall layer suggests that the particular domain is chosen largely randomly and independent of the orientation of the substrate. In contrast, the results show that the structure of the GaAs substrate was a single fcc domain. The widths of the off-axis Bragg reflections along the [111] direction for the thinnest sample was within error the same as those for the (hhh ) Bragg reflections showing that each fcc domain penetrated through the entire layer.

  18. Polymethacrylate monolithic columns for hydrophilic interaction liquid chromatography prepared using a secondary surface polymerization.

    PubMed

    Currivan, Sinéad; Macak, Jan M; Jandera, Pavel

    2015-07-10

    Zwitterionic methacrylate based polymeric monolithic columns were prepared in two-step polymerizations, with reduced polymerization times. Characteristic properties such as hydrodynamic permeability, porosity, retention factors, and pore size distribution charts were used for column evaluation. A scaffold column was fabricated by polymerization of poly(lauryl methacrylate-co-tetraethyleneglycol dimethacrylate) and was used without further modification as a support for a poly(N,N-dimethyl-N-methacryloxyethyl-N-(3-sulfopropyl)ammonium betaine-co-bisphenol A glycerolate dimethacrylate) second monolith layer with zwitterionic functionality, for HILIC separations. An additional internal structure was formed by the second monolithic layer. The fabrication procedure was reproducible with RSD<5%. Field emission scanning electron microscopy has also been used to investigate column pore morphology, using a novel technique where the polymeric material is imaged directly, without coverage with a conducting film or particles. The new polar monolithic columns were used for HILIC separations of phenolic acids, flavones, nucleosides, and bases of nucleic acids, with similar efficiencies but different selectivities for zwitterionic methacrylate monolithic columns recently prepared by single step polymerization.

  19. Polymethacrylate monolithic columns for hydrophilic interaction liquid chromatography prepared using a secondary surface polymerization.

    PubMed

    Currivan, Sinéad; Macak, Jan M; Jandera, Pavel

    2015-07-10

    Zwitterionic methacrylate based polymeric monolithic columns were prepared in two-step polymerizations, with reduced polymerization times. Characteristic properties such as hydrodynamic permeability, porosity, retention factors, and pore size distribution charts were used for column evaluation. A scaffold column was fabricated by polymerization of poly(lauryl methacrylate-co-tetraethyleneglycol dimethacrylate) and was used without further modification as a support for a poly(N,N-dimethyl-N-methacryloxyethyl-N-(3-sulfopropyl)ammonium betaine-co-bisphenol A glycerolate dimethacrylate) second monolith layer with zwitterionic functionality, for HILIC separations. An additional internal structure was formed by the second monolithic layer. The fabrication procedure was reproducible with RSD<5%. Field emission scanning electron microscopy has also been used to investigate column pore morphology, using a novel technique where the polymeric material is imaged directly, without coverage with a conducting film or particles. The new polar monolithic columns were used for HILIC separations of phenolic acids, flavones, nucleosides, and bases of nucleic acids, with similar efficiencies but different selectivities for zwitterionic methacrylate monolithic columns recently prepared by single step polymerization. PMID:26022313

  20. Determination of the surface structures of the GaAs(001)-(2×4) As-rich phase

    NASA Astrophysics Data System (ADS)

    Hashizume, Tomihiro; Xue, Q.-K.; Ichimiya, A.; Sakurai, T.

    1995-02-01

    Field-ion scanning tunneling microscopy (STM) and in situ reflection high-energy electron diffraction (RHEED) have been used to study the atomic structures of the As-rich GaAs(001) surfaces grown by molecular-beam epitaxy and migration-enhanced epitaxy. The (2×4) α, β, and γ phases and the c(4×4) phase have been investigated in a systematic manner, controlling the As surface coverage. The high-resolution STM images show that the (2×4) α, β, and γ phases all have the same unit structure in the outermost surface layer, which consists of two As dimers and two As dimer vacancies. Various structure models proposed for the (2×4) phases are examined based on the STM observations and dynamical calculation of the RHEED spot intensities. We now propose the following model: The α phase is the two-As-dimer model proposed by Farrell and Palmstrom with relaxation incorporated by Northrup and Froyen. The surface coverage of the α phase is 0.5 ML of As. The β phase is the two-As-dimer model proposed by Chadi. The surface coverage of the β phase is 0.75 ML of As. The so-called γ phase is characterized by its small domains separated by open areas. The domains consist of the same local structure as the β phase and the open areas between them have a disordered As double-layer structure similar to that of the c(4×4) phase. The γ phase is, thus, no more than the mixture of the β phase and the c(4×4) phase with the surface As coverage varying between 1.75 and 0.75 ML depending on the growth conditions. Our structure model for the As-rich GaAs(001) surface is consistent with most of the observations reported.

  1. Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 × 4 surface

    NASA Astrophysics Data System (ADS)

    Ozeki, M.; Iwasa, Y.; Shimizu, Y.

    2007-04-01

    Adsorption process of methylchloride (CH 3Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH 3Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH 3Cl exposed surface. They were largely observed at the "B-type" step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH 3Cl molecules without any dissociation. The adsorption mechanism of CH 3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.

  2. Investigation of ultrafast photothermal surface expansion and diffusivity in GaAs via laser-induced dynamic gratings

    SciTech Connect

    Pennington, D.M.

    1992-04-01

    This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, D{sub S}. By varying the fringe spacing of the grating, this technique has the potential to separate the signal contributions to the expansion of the lattice in the perpendicular and parallel directions. In the data presented here a large fringe spacing was used, thus the dominant contribution to the rising edge of the signal was expansion perpendicular to the surface. Comparison of he results with a straightforward thermal model yields good agreement over a range of temperatures (20--300{degrees}K). Values for D{sub S} in GaAs were measured and found to be in reasonable agreement with bulk values above 50{degrees}K. Below 50{degrees}K, D{sub S} were determined to be up to an order of magnitude slower than the bulk diffusivity due to increased phonon boundary scattering. The applicability and advantages of the TG technique for studying photothermal and photoacoustic phenomena are discussed.

  3. Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

    SciTech Connect

    Liu, Y. C.; Hung, H. Y.; Kwo, J. E-mail: raynien@phys.nthu.edu.tw; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M. E-mail: raynien@phys.nthu.edu.tw; Tseng, S. C.; Hsu, C. H. E-mail: raynien@phys.nthu.edu.tw; Chang, M. T.; Lo, S. C.

    2015-09-21

    Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

  4. Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers

    SciTech Connect

    Zhuravlev, A. G.; Savchenko, M. L.; Paulish, A. G.; Alperovich, V. L.; Scheibler, H. E.; Jaroshevich, A. S.

    2013-12-04

    The dosage dependences of surface band bending and effective electron affinity under cesium deposition on the Ga-rich GaAs(001) surface, along with the relaxation of these electronic properties after switching off the Cs source are experimentally studied by means of modified photoreflectance spectroscopy and photoemission quantum yield spectroscopy. At small Cs coverages, below half of a monolayer, additional features in the dosage dependence and subsequent downward relaxation of the photoemission current are determined by the variations of band bending. At coverages above half of a monolayer the upward relaxation of the photocurrent is caused supposedly by the decrease of the electron affinity due to restructuring in the nonequilibrium cesium overlayer.

  5. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  6. GaAs optoelectronic neuron arrays.

    PubMed

    Lin, S; Grot, A; Luo, J; Psaltis, D

    1993-03-10

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10(4) cm(-2) are discussed.

  7. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  8. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    SciTech Connect

    He, Yunrui; Wang, Jun Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  9. Accelerated colorimetric immunosensing using surface-modified porous monoliths and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Chuag, Shao-Hsuan; Chen, Guan-Hua; Chou, Hsin-Hao; Shen, Shu-Wei; Chen, Chien-Fu

    2013-08-01

    A rapid and sensitive immunoassay platform integrating polymerized monoliths and gold nanoparticles (AuNPs) has been developed. The porous monoliths are photopolymerized in situ within a silica capillary and serve as solid support for high-mass transport and high-density capture antibody immobilization to create a shorter diffusion length for antibody-antigen interactions, resulting in a rapid assay and low reagent consumption. AuNPs are modified with detection antibodies and are utilized as signals for colorimetric immunoassays without the need for enzyme, substrate and sophisticated equipment for quantitative measurements. This platform has been verified by performing a human IgG sandwich immunoassay with a detection limit of 0.1 ng ml-1. In addition, a single assay can be completed in 1 h, which is more efficient than traditional immunoassays that require several hours to complete.

  10. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  11. Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers

    NASA Astrophysics Data System (ADS)

    Luna, E.; Wu, M.; Puustinen, J.; Guina, M.; Trampert, A.

    2015-05-01

    We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga(As,Bi) epilayers grown by low-temperature (<300 °C) molecular beam epitaxy (MBE) on GaAs(001). Both cross-section and plan-view transmission electron microscopy techniques are used to investigate the nature of the LCMs, consisting of Bi-rich cylinder-like nanostructures lying along the [001] growth direction. The observed LCMs are the consequence of a two-dimensional phase separation process occurring at the surface of the growing epilayers, and their columnar nature is consistent with a surface-directed spinodal decomposition process. Although LCMs are thermodynamically driven, we show how they can be kinetically controlled, in particular, through the As/Ga flux ratio and the substrate temperature. This is a result of LCMs developing from surface atomic diffusion processes, since the atomic dimer configurations on the surface alter adatom diffusivity. The significant role of the surface reconstructions is also discussed.

  12. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  13. Half-metallicity at the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surface and its interface with GaAs(001).

    PubMed

    Zarei, Sareh; Javad Hashemifar, S; Akbarzadeh, Hadi; Hafari, Zohre

    2009-02-01

    Electronic and magnetic properties of the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surfaces and its interfaces with GaAs(001) are studied within the framework of density functional theory by using the plane-wave pseudopotential approach. The phase diagram obtained by ab initio atomistic thermodynamics shows that the CrAl surface is the most stable (001) termination of this Heusler alloy. We discuss that, at the ideal surfaces and interfaces with GaAs, half-metallicity of the alloy is lost, although the CrAl surface keeps high spin polarization. The energy band profile of the stable interface is investigated and a negative p Schottky barrier of -0.78 eV is obtained for this system.

  14. In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

    NASA Astrophysics Data System (ADS)

    Isu, Toshiro; Watanabe, Akiyoshi; Hata, Masayuki; Katayama, Yoshifumi

    1990-03-01

    Microscopic observations of epitaxial growth layers of GaAs were made with a scanning microprobe reflection high energy electron diffraction (RHEED). A scanning microprobe electron gun has been combined with a specially designed molecular beam epitaxy (MBE) system with both solid sources and gas sources. Scanning reflection electron microscope (SREM) images using the specular beam spot revealed granular features over the entire surfaces of MBE-grown GaAs layers, which were thought to come from undulation of the surface. Similar features of the surface were observed on the layers grown by gas-source MBE using trimethylgallium and arsine. A microscopic surface morphology was found to be fairly rough and the features depended on the species of the sources and growth conditions.

  15. Chemotaxis for enhanced immobilization of Escherichia coli and Legionella pneumophila on biofunctionalized surfaces of GaAs.

    PubMed

    Hassen, Walid M; Sanyal, Hashimita; Hammood, Manar; Moumanis, Khalid; Frost, Eric H; Dubowski, Jan J

    2016-06-20

    The authors have investigated the effect of chemotaxis on immobilization of bacteria on the surface of biofunctionalized GaAs (001) samples. Escherichia coli K12 bacteria were employed to provide a proof-of-concept of chemotaxis-enhanced bacterial immobilization, and then, these results were confirmed using Legionella pneumophila. The recognition layer was based on a self-assembled monolayer of thiol functionalized with specific antibodies directed toward E. coli or L. pneumophila, together with the enzyme beta-galactosidase (β-gal). The authors hypothesized that this enzyme together with its substrate lactose would produce a gradient of glucose which would attract bacteria toward the biochip surface. The chemotaxis effect was monitored by comparing the number of bacteria bound to the biochip surface with and without attractant. The authors have observed that β-gal plus lactose enhanced the immobilization of bacteria on our biochips with a higher effect at low bacterial concentrations. At 100 and 10 bacteria/ml, respectively, for E. coli and L. pneumophila, the authors observed up to 11 and 8 times more bacteria bound to biochip surfaces assisted with the chemotaxis effect in comparison to biochips without chemotaxis. At 10(4) bacteria/ml, the immobilization enhancement rate did not exceed two times.

  16. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  17. Monolithic Millimeter Wave Oscillator

    NASA Astrophysics Data System (ADS)

    Wang, Nan-Lei

    There is an increasing interest in the millimeter -wave spectrum for use in communications and for military and scientific applications. The concept of monolithic integration aims to produce very-high-frequency circuits in a more reliable, reproducible way than conventional electronics, and also at lower cost, with smaller size and lighter weight. In this thesis, a negative resistance device is integrated monolithically with a resonator to produce an effective oscillator. This work fills the void resulting from the exclusion of the local oscillator from the monolithic millimeter-wave integrated circuit (MMMIC) receiver design. For convenience a microwave frequency model was used to design the resonator circuit. A 5 GHz hybrid oscillator was first fabricated to test the design; the necessary GaAs process technology was developed for the fabrication. Negative resistance devices and oscillator theory were studied, and a simple but practical model of the Gunn diode was devised to solve the impedance matching problem. Monolithic oscillators at the Ka band (35 GHz) were built and refined. All devices operated in CW mode. By means of an electric-field probe, the output power was coupled into a metallic waveguide for measurement purposes. The best result was 3.63 mW of power output, the highest efficiency was 0.43% and the frequency stability was better than 10-4. In the future, an IMPATT diode could replace the Gunn device to give much higher power and efficiency. A varactor-tuned circuit also suitable for large-scale integration is under study.

  18. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  19. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111]. PMID:16608359

  20. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111].

  1. Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

    NASA Astrophysics Data System (ADS)

    Schnedler, M.; Portz, V.; Weidlich, P. H.; Dunin-Borkowski, R. E.; Ebert, Ph.

    2015-06-01

    A quantitative description of photoexcited scanning tunneling spectra is developed and applied to photoexcited spectra measured on p -doped nonpolar GaAs(110) surfaces. Under illumination, the experimental spectra exhibit an increase of the tunnel current at negative sample voltages only. In order to analyze the experimental data quantitatively, the potential and charge-carrier distributions of the photoexcited tip-vacuum-semiconductor system are calculated by solving the Poisson as well as the hole and electron continuity equations by a finite-difference algorithm. On this basis, the different contributions to the tunnel current are calculated using an extension of the model of Feenstra and Stroscio to include the light-excited carrier concentrations. The best fit of the calculated tunnel currents to the experimental data is obtained for a tip-induced band bending, which is limited by the partial occupation of the C3 surface state by light-excited electrons. The tunnel current at negative voltages is then composed of a valence band contribution and a photoinduced tunnel current of excited electrons in the conduction band. The quantitative description of the tunnel current developed here is generally applicable and provides a solid foundation for the quantitative interpretation of photoexcited scanning tunneling spectroscopy.

  2. X-ray photoemission study of the Te-precursor surfaces and the initial stages of growth of ZnTe on GaAs (100)

    NASA Astrophysics Data System (ADS)

    Tatarenko, S.; Saminadayar, K.; Cibert, J.

    1987-11-01

    The initial stages of epitaxial growth of ZnTe on GaAs (100) have been studied by x-ray photoemission spectroscopy. The two surface structures (6×1 and (3)1/2×3 ) resulting from the adsorption of Te on GaAs (100) were used as precursor for ZnTe growth. Each of these structures is characterized by two different adsorbed Te states. For the 6×1 structure, the two states are assigned to As-Te-As and tentatively to Te-Te-Te bonds; and for the (3)1/2×3 structure, the assigned bonds are As-Te-As and GaGa Te-As. Growth of ZnTe (100) does not induce any change in the bonds associated with the 6×1 structure but modifies that associated with the (3)1/2×3 surface.

  3. Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces

    NASA Astrophysics Data System (ADS)

    Henegar, Alex J.

    Device scaling has been key for creating faster and more powerful electronic devices. Integral circuit components like the metal-oxide semiconductor field-effect transistor (MOSFET) now rely on material deposition techniques, like atomic layer deposition (ALD), that possess atomic-scale thickness precision. At the heart of the archetypal MOSFET is a SiO2/Si interface which can be formed to near perfection. However when the thickness of the SiO 2 layer is shrunk down to a few nanometers several complications arise like unacceptably high leakage current and power consumption. Replacing Si with III-V semiconductors and SiO2 with high-k dielectric materials is appealing but comes with its own set of challenges. While SiO2 is practically defect-free, the native oxides of III-Vs are poor dielectrics. In this dissertation, the surface chemistry and interface evolution during the ALD of high-k metal oxides on Si(100), GaAs(100) and InAs(100) was studied. In particular, the surface chemistry and crystallization of TiO2 films grown on Si(100) was investigated using transmission Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Large, stable, and highly reactive anatase TiO2 grains were found to form during a post-deposition heat treatment after the ALD at 100 °C. The remainder of this work was focused on the evolution of the interfacial oxides during the deposition of TiO2 and Al2O3 on InAs(100) and GaAs(100) and during the deposition of Ta2O 5 on InAs(100). In summary the ALD precursor type, deposited film, and substrate had an influence in the evolution of the native oxides. Alkyl amine precursors fared better at removing the native oxides but the deposited films (TiO2 and Ta2O5) were susceptible to significant native oxide diffusion. The alkyl precursor used for the growth of Al 2O3 was relatively ineffective at removing the oxides but was

  4. Negative electron affinity on GaAs(110) with Cs and NF3: a surface science study

    NASA Astrophysics Data System (ADS)

    Cao, Renyu; Tang, Huan; Pianetta, Piero A.

    1995-09-01

    We have investigated the formation and the nature of negative electron affinity on p-type GaAs surfaces prepared with Cs and NF3 as the fluorine carrier. The results have been compared with those obtained from the Cs-O prepared NEA photocathodes. High resolution photoelectron core level and valence band spectroscopy is utilized to reveal the underlying physics and chemistry during the NEA activation process. We have shown clear evidence of dipole formation both at the physics and chemistry during the NEA activation process. We have shown clear evidence of dipole formation both at the Cs/GaAs interface and in the activation layer. We also demonstrate that no chemcial reaction takes place between fluorine and the substrate. Other aspects related to the NEA formation such as the so-called two-stage activation, activation layer stoichiometry, and aging process have been studied. The study of this model system leads us to conclude that the NEA formation can be adequately explained by the double dipole layer model.

  5. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  6. Chemical-state-resolved x-ray standing-wave analysis of Te-adsorbed GaAs(001)-(2×1) surface

    NASA Astrophysics Data System (ADS)

    Sugiyama, Munehiro; Maeyama, Satoshi

    1998-03-01

    A Te-adsorbed GaAs(001)-(2×1) surface is studied by back-reflection x-ray standing-wave analysis, and average position of adsorbed Te atoms on GaAs(001) is found to be close to the As atomic site and bond with Ga atoms. Chemical-state-resolved x-ray standing-wave analysis using chemical shift in Te 3d5/2 core-level photoelectron spectra suggest that Te atoms in two different chemical states correspond to two different distributions. Te atoms in a lower binding-energy chemical state are found to be in higher atomic positions and to be less ordered, whereas those in a higher binding-energy chemical state are found to be in lower atomic position and are highly ordered.

  7. Microfluidic devices and methods including porous polymer monoliths

    DOEpatents

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  8. Microfluidic devices and methods including porous polymer monoliths

    SciTech Connect

    Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay

    2015-12-01

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  9. Monolithic microwave integrated circuit technology for advanced space communication

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Romanofsky, Robert R.

    1988-01-01

    Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

  10. Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(0 0 1): Experiment and Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Kazantsev, D. M.; Akhundov, I. O.; Shwartz, N. L.; Alperovich, V. L.; Latyshev, A. V.

    2015-12-01

    Ostwald ripening and step-terraced morphology formation on the GaAs(0 0 1) surface during annealing in equilibrium conditions are investigated experimentally and by Monte Carlo simulation. Fourier and autocorrelation analyses are used to reveal surface relief anisotropy and provide information about islands and pits shape and their size distribution. Two origins of surface anisotropy are revealed. At the initial stage of surface smoothing, crystallographic anisotropy is observed, which is caused presumably by the anisotropy of surface diffusion at GaAs(0 0 1). A difference of diffusion activation energies along [1 1 0] and [1 1 bar 0] axes of the (0 0 1) face is estimated as ΔEd ≈ 0.1 eV from the comparison of experimental results and simulation. At later stages of surface smoothing the anisotropy of the surface relief is determined by the vicinal steps direction. At the initial stage of step-terraced morphology formation the kinetics of monatomic islands and pits growth agrees with the Ostwald ripening theory. At the final stage the size of islands and pits decreases due to their incorporation into the forming vicinal steps.

  11. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  12. Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

    NASA Astrophysics Data System (ADS)

    Gocalinska, A.; Rubini, S.; Pelucchi, E.

    2016-10-01

    The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

  13. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    NASA Astrophysics Data System (ADS)

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-11-01

    Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays with dramatically improved both intra-chip response repeatability and assay detection sensitivity.

  14. Hypercrosslinking: New approach to porous polymer monolithic capillary columns with large surface area for the highly efficient separation of small molecules

    PubMed Central

    Urban, Jiri; Svec, Frantisek; Fréchet, Jean M.J.

    2010-01-01

    Monolithic polymers with an unprecedented surface area of over 600 m2/g have been prepared from a poly(styrene-co-vinylbenzyl chloride-co-divinylbenzene) precursor monolith that was swollen in 1,2-dichloroethane and hypercrosslinked via Friedel-Crafts reaction catalyzed by ferric chloride. Both the composition of the reaction mixture used for the preparation of the precursor monolith and the conditions of the hypercrosslinking reaction have been varied using mathematical design of experiments and the optimized system validated. Hypercrosslinked monolithic capillary columns contain an array of small pores that make the column ideally suited for the high efficiency isocratic separations of small molecules such as uracil and alkylbenzenes with column efficiencies reproducibly exceeding 60,000 plates/m for retained compounds. The separation process could be accelerated while also improving peak shape through the use of higher temperatures and a ternary mobile phase consisting of acetonitrile, tetrahydrofuran, and water. As a result, seven compounds were well separated in less than 2 min. These columns also facilitate separations of peptide mixtures such as a tryptic digest of cytochrome c using a gradient elution mode which affords a sequence coverage of 93%. A 65 cm long hypercrosslinked capillary column used in size exclusion mode with tetrahydrofuran as the mobile phase afforded almost baseline separation of toluene and five polystyrene standards. PMID:21092973

  15. Ab initio cluster calculations of hydrogenated GaAs(001) surfaces

    NASA Astrophysics Data System (ADS)

    Fu, Q.; Li, L.; Hicks, R. F.

    2000-04-01

    Hydrogen adsorption on the (2×4) and (4×2) reconstructions of gallium arsenide (001) has been studied by internal reflectance infrared spectroscopy and ab initio cluster calculations with density-functional theory. The calculations are made on Ga5As4H11,13, Ga4As5H11,13, and Ga7As8H19 clusters, which model the arsenic- and gallium-dimer termination of the semiconductor surface. Excellent agreement has been achieved between the vibrational frequencies predicted by the theory and those observed in experiments. On the (2×4), hydrogen adsorbs on arsenic dimers to form isolated and coupled arsenic-monohydrogen bonds, and arsenic-dihydrogen bonds. Conversely, on the (4×2), hydrogen adsorbs on gallium dimers to form terminal and bridged gallium hydrides. The latter species occur in isolated or coupled structures involving two or three Ga atoms.

  16. An investigation of penetrant techniques for detection of machining-induced surface-breaking cracks on monolithic ceramics

    SciTech Connect

    Forster, G.A.; Ellingson, W.A.

    1996-02-01

    The purpose of this effort was to evaluate penetrant methods for their ability to detect surface-breaking cracks in monolithic ceramic materials with an emphasis on detection of cracks generated by machining. There are two basic penetrant types, visible and fluorescent. The visible penetrant method is usually augmented by powder developers and cracks detected can be seen in visible light. Cracks detected by fluorescent penetrant are visible only under ultraviolet light used with or without a developer. The developer is basically a powder that wicks up penetrant from a crack to make it more observable. Although fluorescent penetrants were recommended in the literature survey conducted early in this effort, visible penetrants and two non-standard techniques, a capillary gaseous diffusion method under development at the institute of Chemical Physics in Moscow, and the {open_quotes}statiflux{close_quotes} method which involves use of electrically charged particles, were also investigated. SiAlON ring specimens (1 in. diameter, 3/4 in. wide) which had been subjected to different thermal-shock cycles were used for these tests. The capillary gaseous diffusion method is based on ammonia; the detector is a specially impregnated paper much like litmus paper. As expected, visible dye penetrants offered no detection sensitivity for tight, surface-breaking cracks in ceramics. Although the non-standard statiflux method showed promise on high-crack-density specimens, it was ineffective on limited-crack-density specimens. The fluorescent penetrant method was superior for surface-breaking crack detection, but successful application of this procedure depends greatly on the skill of the user. Two presently available high-sensitivity fluorescent penetrants were then evaluated for detection of microcracks on Si{sub 3}N{sub 4} and SiC from different suppliers. Although 50X optical magnification may be sufficient for many applications, 200X magnification provides excellent delectability.

  17. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, Gregory A.

    1994-01-01

    A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

  18. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  19. Monolithic arrays of grating-surface-emitting diode lasers and quantum well modulators for optical communications

    NASA Technical Reports Server (NTRS)

    Carlson, N. W.; Evans, G. A.; Liew, S. K.; Kaiser, C. J.

    1990-01-01

    The electro-optic switching properties of injection-coupled coherent 2-D grating-surface-emitting laser arrays with multiple gain sections and quantum well active layers are discussed and demonstrated. Within such an array of injection-coupled grating-surface-emitting lasers, a single gain section can be operated as intra-cavity saturable loss element that can modulate the output of the entire array. Experimental results demonstrate efficient sub-nanosecond switching of high power grading-surface-emitting laser arrays by using only one gain section as an intra-cavity loss modulator.

  20. Evaluation of the minority carrier diffusion length and surface-recombination velocity in GaAs p/n solar cells

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Moeller, Hans J.; Bailey, Sheila

    1991-01-01

    The minority carrier diffusion length (Lp) and the surface recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron-beam-induced current. A fitting procedure was then used to fit this expression with experimental values to obtain Lp. The results show that both Vs and Lp vary with x. Lp measured in irradiated cells showed a marked reduction. These values were compared to those measured previously which did not account for Vs.

  1. Synthesis of robust hierarchical silica monoliths by surface-mediated solution/precipitation reactions over different scales: designing capillary microreactors for environmental applications.

    PubMed

    García-Aguilar, J; Miguel-García, I; Berenguer-Murcia, Á; Cazorla-Amorós, D

    2014-12-24

    A synthetic procedure to prepare novel materials (surface-mediated fillings) based on robust hierarchical monoliths is reported. The methodology includes the deposition of a (micro- or mesoporous) silica thin film on the support followed by growth of a porous monolithic SiO2 structure. It has been demonstrated that this synthesis is viable for supports of different chemical nature with different inner diameters without shrinkage of the silica filling. The formation mechanism of the surface-mediated fillings is based on a solution/precipitation process and the anchoring of the silica filling to the deposited thin film. The interaction between the two SiO2 structures (monolith and thin film) depends on the porosity of the thin film and yields composite materials with different mechanical stability. By this procedure, capillary microreactors have been prepared and have been proved to be highly active and selective in the total and preferential oxidation of carbon monoxide (TOxCO and PrOxCO).

  2. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  3. Monolithic nanoporous gold disks with large surface area and high-density plasmonic hot-spots

    NASA Astrophysics Data System (ADS)

    Zhao, Fusheng; Zeng, Jianbo; Arnob, Md Masud Parvez; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to enhancement of the local electric field by light-excited surface plasmons, the collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3- dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks (NPGDs) not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interaction as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of NPGD can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. The coupling between external and internal nanoarchitecture provides a potential design dimension for plasmonic engineering. The synergy of large specific surface area, high-density hot spots, and tunable plasmonics would profoundly impact applications where plasmonic nanoparticles and non-plasmonic mesoporous nanoparticles are currently employed, e.g., in in-vitro and in-vivo biosensing, molecular imaging, photothermal contrast agents, and molecular cargos.

  4. Monolithic geared-mechanisms driven by a polysilicon surface-micromachined on-chip electrostatic microengine

    SciTech Connect

    Sniegowski, J.J.; Miller, S.L.; LaVigne, G.F.; Rodgers, M.S.; McWhorter, P.J.

    1996-05-01

    We have previously described a practical micromachined power source: the polysilicon, surface-micromachined, electrostatically actuated microengine. Here we report on 3 aspects of implementing the microengine. First, we discuss demonstrations of the first-generation microengine actuating geared micromechanisms including gear trains with elements having dimensions comparable to the drive gear (about 50 {mu}m) and a relatively large (1600-{mu}m-diameter) rotating optical shutter element. These configurations span expected operating extremes for the microengine and address the coupling and loading issues for very-low-aspect-ratio micromechanisms which are common to the design of surface-micromachined devices. Second, we report on a second-generation of designs that utilize improved gear teeth design, a gear speed-reduction unit, and higher force-per-unit-area electrostatic comb drives. The speed-reduction unit produces an overall angular speed reduction of 9.63 and requires dual-level compound gears. Third, we discuss a dynamics model developed to accomplish 3 objectives: drive inertial loads in a controlled fashion, minimize stress and frictional forces during operation, and determine as a function of time the forces associated with the drive gear (eg load torque on drive gear from friction).

  5. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  6. Accurate characterization and modeling of transmission lines for GaAs MMIC's

    NASA Astrophysics Data System (ADS)

    Finlay, Hugh J.; Jansen, Rolf H.; Jenkins, John A.; Eddison, Ian G.

    1988-06-01

    The authors discuss computer-aided design (CAD) tools together with high-accuracy microwave measurements to realize improved design data for GaAs monolithic microwave integrated circuits (MMICs). In particular, a combined theoretical and experimental approach to the generation of an accurate design database for transmission lines on GaAs MMICs is presented. The theoretical approach is based on an improved transmission-line theory which is part of the spectral-domain hybrid-mode computer program MCLINE. The benefit of this approach in the design of multidielectric-media transmission lines is described. The program was designed to include loss mechanisms in all dielectric layers and to include conductor and surface roughness loss contributions. As an example, using GaAs ring resonator techniques covering 2 to 24 GHz, accuracies in effective dielectric constant and loss of 1 percent and 15 percent respectively, are presented. By combining theoretical and experimental techniques, a generalized MMIC microstrip design database is outlined.

  7. Towards monolithic integration of mode-locked vertical cavity surface emitting laser

    NASA Astrophysics Data System (ADS)

    Aldaz, Rafael I.

    2007-12-01

    The speed and performance of today's high end computing and communications systems have placed difficult but still feasible demands on off-chip electrical interconnects. However, future interconnect systems may need aggregate bandwidths well into the terahertz range thereby making electrical bandwidth, density, and power targets impossible to meet. Optical interconnects, and specifically compact semiconductor mode-locked lasers, could alleviate this problem by providing short pulses in time at 10s of GHz repetition rates for Optical Time Division Multiplexing (OTDM) and clock distribution applications. Furthermore, the characteristic spectral comb of frequencies of these lasers could also serve as a multi-wavelength source for Wavelength Division Multiplexing (WDM) applications. A fully integrated mode-locked Vertical Cavity Surface Emitting Laser (VCSEL) is proposed as a low-cost high-speed source for these applications. The fundamental laser platform for such a device has been developed and a continuous-wave version of these lasers has been fabricated and demonstrated excellent results. Output powers close to 60mW have been obtained with very high beam quality factor of M2 < 1.07. The mode-locked laser utilizes a passive mode-locking region provided by a semiconductor saturable absorber integrated together with the gain region. Such an aggressive integration forces the resonant beam in the cavity to have the same area on the gain and absorber sections, placing high demands on the saturation fluence and absorption coefficient for the saturable absorber. Quantum Wells (QWs), excitons in QWs and Quantum Dots (QDs) have been investigated as possible saturable absorbers for the proposed device. QDs have been found to have the lowest saturation fluence and total absorption, necessary to meet the mode-locking requirements for this configuration. The need to further understand QDs as saturable absorbers has led to the development of a theoretical model on the dynamics of

  8. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  9. Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

    NASA Astrophysics Data System (ADS)

    Hwang, J. S.; Lin, H. C.; Lin, K. I.; Zhang, X. C.

    2005-09-01

    This study examines terahertz radiation from a series of In0.52Al0.48As and GaAs surface-intrinsic-N+ structures (SIN+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SIN+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

  10. Electro-optic investigation of the n-alkanethiol GaAs(001) interface: Surface phenomena and applications to photoluminescence-based biosensing

    NASA Astrophysics Data System (ADS)

    Marshall, Gregory M.

    Semiconductor surfaces coupled to molecular structures derived from organic chemistry form the basis of an emerging class of field-effect devices. In addition to molecular electronics research, these interfaces are developed for a variety of sensor applications in the electronic and optical domains. Of practical interest are self-assembled monolayers (SAMs) comprised of n-alkanethiols [HS(CH2)n], which couple to the GaAs(001) surface through S-GaAs covalent bond formation. These SAMs offer potential functionality in terms of the requisite sensor chemistry and the passivation effect such coupling is known to afford. In this thesis, the SAM-GaAs interface is investigated in the context of a photonic biosensor based on photoluminescence (PL) variation. The scope of the work is categorized into three parts: i) the structural and compositional analysis of the surface using X-ray photoelectron spectroscopy (XPS), ii) the investigation of electronic properties at the interface under equilibrium conditions using infrared (IR) spectroscopy, the Kelvin probe method, and XPS, and iii) the analysis of the electro-optic response under steady-state photonic excitation, specifically, the surface photovoltage (SPV) and PL intensity. Using a partial overlayer model of angle-resolved XPS spectra in which the component assignments are shown to be quantitatively valid, the coverage fraction of methyl-terminated SAMs is shown to exceed 90%. Notable among the findings are a low-oxide, Ga-rich surface with elemental As present in sub-monolayer quantities consistent with theoretical surface morphologies. Modal analysis of transmission IR spectra show that the SAM molecular order is sufficient to support a Beer-Lambert determination of the IR optical constants, which yields the observation of a SAM-specific absorbance enhancement. By correlation of the IR absorbance with the SAM dipole layer potential, the enhancement mechanism is attributed to the vibrational moments added by the

  11. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  12. Clustering effects in a low coverage deposition of gold on the GaAs( 0 0 1 )-β2(2×4) surface: an STM-UHV and theoretical study

    NASA Astrophysics Data System (ADS)

    Amore Bonapasta, A.; Scavia, G.; Buda, F.

    2002-11-01

    A comparative study of gold deposition on the GaAs(0 0 1)-β2(2×4) surface based on scanning tunneling microscopy (STM)-ultra high vacuum (UHV) and Car-Parrinello calculations has been carried out. The theoretical results show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On the other hand, STM-UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the GaAs(0 0 1)-β2(2×4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2×4) reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly interacting with the two As dimers of the GaAs unit cell. An STM-UHV analysis of the surface for a deposition >1 ML suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.

  13. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  14. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  15. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  16. Nano-accuracy measurements and the surface profiler by use of Monolithic Hollow Penta-Prism for precision mirror testing

    NASA Astrophysics Data System (ADS)

    Qian, Shinan; Wayne, Lewis; Idir, Mourad

    2014-09-01

    We developed a Monolithic Hollow Penta-Prism Long Trace Profiler-NOM (MHPP-LTP-NOM) to attain nano-accuracy in testing plane- and near-plane-mirrors. A new developed Monolithic Hollow Penta-Prism (MHPP) combined with the advantages of PPLTP and autocollimator ELCOMAT of the Nano-Optic-Measuring Machine (NOM) is used to enhance the accuracy and stability of our measurements. Our precise system-alignment method by using a newly developed CCD position-monitor system (PMS) assured significant thermal stability and, along with our optimized noise-reduction analytic method, ensured nano-accuracy measurements. Herein we report our tests results; all errors are about 60 nrad rms or less in tests of plane- and near-plane- mirrors.

  17. Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Sharma, T. K.; Kumar, Shailendra; Rustagi, K. C.

    2002-11-01

    Surface photovoltage spectroscopy studies on thick semi-insulating GaAs wafers are reported in the range 850-950 nm using the chopped light geometry. We observed some interesting sharp features in the sub-band-gap of SI-GaAs, which were reported recently [Appl. Phys. Lett. 79, 1715(2001); Rev. Sci. Instrum. 73, 1835 (2002)]. In this article, we present the dependence of these features on the chopping frequency and the source intensity. The intensity variation in the above-band-gap region and for the A peak (898 nm) in the sub-band-gap region could be fitted with single component while it is necessary to consider more than one component to fit the data for the Q peak (887 nm) in the sub-band-gap region. A model consistent with the observed features is also proposed.

  18. Diffusion of Ni, Ga, and As in the surface layer of GaAs and characteristics of the Ni/GaAs contact

    SciTech Connect

    Uskov, V.A.; Fedotov, A.B.; Erofeeva, E.A.; Rodionov, A.I.; Dzhumakulov, D.T.

    1987-07-01

    The authors investigate the low-temperature codiffusion of Ni, Ga, and As in the surface layer of gallium arsenide and study its effect on the current-voltage characteristics of a Ni/GaAs rectifier contact. The concentration distribution of atoms in the function layer of a Ni-GaAs system was investigated by the methods of layerwise radiometric and neutron-activation analyses. It was found that interdiffusion of components takes place in the Ni-GaAs system in an elastic stress field, generated by the differences in the lattice parameters and thermal-expansion coefficients of Ni, GaAs, and the intermetallic compound which form. The form and parameters of the current-voltage characteristics of a Ni/GaAs contact are determined by the phase composition and the structure of the junction layer.

  19. Combined experimental and theoretical study of fast atom diffraction on the β2(2×4) reconstructed GaAs(001) surface

    NASA Astrophysics Data System (ADS)

    Debiossac, M.; Zugarramurdi, A.; Khemliche, H.; Roncin, P.; Borisov, A. G.; Momeni, A.; Atkinson, P.; Eddrief, M.; Finocchi, F.; Etgens, V. H.

    2014-10-01

    A grazing incidence fast atom diffraction (GIFAD or FAD) setup, installed on a molecular beam epitaxy chamber, has been used to characterize the β2(2×4) reconstruction of a GaAs(001) surface at 530∘C under an As4 overpressure. Using a 400-eV 4He beam, high-resolution diffraction patterns with up to eighty well-resolved diffraction orders are observed simultaneously, providing a detailed fingerprint of the surface structure. Experimental diffraction data are in good agreement with results from quantum scattering calculations based on an ab initio projectile-surface interaction potential. Along with exact calculations, we show that a straightforward semiclassical analysis allows the features of the diffraction chart to be linked to the main characteristics of the surface reconstruction topography. Our results demonstrate that GIFAD is a technique suitable for measuring in situ the subtle details of complex surface reconstructions. We have performed measurements at very small incidence angles, where the kinetic energy of the projectile motion perpendicular to the surface can be reduced to less than 1 meV. This allowed the depth of the attractive van der Waals potential well to be estimated as -8.7 meV in very good agreement with results reported in literature.

  20. ICP etching of GaAs via hole contacts

    SciTech Connect

    Shul, R.J.; Baca, A.G.; Briggs, R.D.; McClellan, G.B.; Pearton, S.J.; Constantine, C.

    1996-09-01

    Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 {mu}m/min with via profiles ranging from highly anistropic to conical.

  1. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study

    PubMed Central

    2013-01-01

    High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces. No high charge states were found in either As 3d or Ga 3d core-level spectra before and after the deposition of the precursors. TMA adsorption does not disrupt the GaAs surface structure. For the (4 × 6) surface, the TMA precursor existed in both chemisorbed and physisorbed forms. In the former, TMA has lost a methyl group and is bonded to the As of the As-Ga dimer. Upon water purge, the dimethylaluminum-As group was etched off, allowing the now exposed Ga to bond with oxygen. Water also changed the physisorbed TMA into the As-O-Al(CH3)2 configuration. This configuration was also found in 1 cycle of TMA and water exposure of the (2 × 4) surface, but with a greater strength, accounting for the high interface defect density in the mid-gap region. PMID:23587341

  2. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  3. Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

    NASA Technical Reports Server (NTRS)

    Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

    1999-01-01

    A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

  4. Effect of Parallel Magnetic Field on Superconductivity of Ultrathin Metal Films Grown on a Cleaved GaAs Surface

    NASA Astrophysics Data System (ADS)

    Sekihara, Takayuki; Miyake, Takahiro; Masutomi, Ryuichi; Okamoto, Tohru

    2015-06-01

    The parallel-magnetic-field H|| dependence of the superconducting transition temperature Tc is studied for ultrathin films of In, Bi, and Al grown on GaAs(110). In the case of In films in the monolayer regime, Tc exhibits a quadratic-like H|| dependence, which is one order of magnitude stronger than that previously observed in monolayer Pb films by the present authors [Phys. Rev. Lett. 111, 057005 (2013)]. The results are well reproduced by a model developed for an inhomogeneous two-dimensional superconducting state in the presence of a moderate Rashba spin-orbit interaction. The Rashba spin splitting is estimated to be 0.04 eV, which is much smaller than that expected for monolayer Pb films. In a few-monolayer Bi film, the suppression of Tc with increasing H|| is comparable to that in monolayer Pb films. On the other hand, much stronger suppression, which is attributed to the Pauli paramagnetic effect, was observed for the Al film.

  5. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    NASA Technical Reports Server (NTRS)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  6. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  7. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Geddes, J.; Sokolov, V.; Contolatis, T.

    1988-01-01

    The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

  8. Native Oxide Transport and Removal During Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces.

    PubMed

    Henegar, Alex J; Cook, Andrew J; Dang, Phillip; Gougousi, Theodosia

    2016-01-27

    In this work, we studied the evolution and transport of the native oxides during the atomic layer deposition (ALD) of TiO2 on GaAs(100) from tetrakis dimethyl amino titanium and H2O. Arsenic oxide transport through the TiO2 film and removal during the ALD process was investigated using transmission Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Experiments were designed to decouple these processes by utilizing their temperature dependence. A 4 nm TiO2 layer was initially deposited on a native oxide surface at 100 °C. Ex situ XPS confirmed that this step disturbed the interface minimally. An additional 3 nm TiO2 film was subsequently deposited at 150 to 250 °C with and without an intermediate thermal treatment step at 250 °C. Arsenic and gallium oxide removal was confirmed during this second deposition, leading to the inevitable conclusion that these oxides traversed at least 4 nm of film so as to react with the precursor and its surface reaction/decomposition byproducts. XPS measurements confirmed the relocation of both arsenic and gallium oxides from the interface to the bulk of the TiO2 film under normal processing conditions. These results explain the continuous native oxide removal observed for alkyl-amine precursor-based ALD processes on III-V surfaces and provide further insight into the mechanisms of film growth.

  9. Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Wolan, John T.; Mount, Charles K.; Hoflund, Gar B.

    1998-03-01

    In this study a hyperthermal oxygen atom source has been used to form an oxide layer on an Ar+-sputtered GaAs(001) surface at room temperature, and this layer has been examined using x-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS). XPS data indicate that the Ga in the near-surface region is oxidized predominantly to Ga2O3 with a significant contribution from GaAsO4 while the As is oxidized predominantly to an AsOx species with significant contributions from As2O3 and GaAsO4 and/or As2O5. The oxide layer thickness is estimated to be about 25 Å, and the XPS Ga:As atom ratio increases from 1.1 to 1.6 during the oxidation. The ISS data indicate that the resulting oxide layer formed is more electrically insulating than a native oxide layer on this surface.

  10. Adsorption over polyacrylonitrile based carbon monoliths

    NASA Astrophysics Data System (ADS)

    Nandi, Mahasweta; Dutta, Arghya; Patra, Astam Kumar; Bhaumik, Asim; Uyama, Hiroshi

    2013-02-01

    Highly porous activated carbon monoliths have been prepared from mesoporous polyacrylonitrile (PAN) monolith as the carbon precursor. The mesoporous PAN monoliths are fabricated by a unique and facile template-free method which on carbonization gives N-doped activated carbon monoliths. The carbonization is achieved via two step thermal process which includes pretreatment in air leading to cyclization and subsequent aromatization of the PAN moieties followed by carbonization in a mixture of argon and carbon dioxide to give a layered carbon framework. Nitrogen sorption experiments carried over these carbon monoliths revealed high surface area (ca. 2500 m2g-1) for these materials with precise micropore size distribution. The activated carbons show extraordinarily high CO2 capture capacity and the uptake up to 3 bar has been found to be as high as 22.5 and 10.6 mmol/g at 273 K and 298 K, respectively.

  11. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  12. Empirical-Statistics Analysis for Zero-Failure GaAs MMICs Life Testing Data

    NASA Astrophysics Data System (ADS)

    Huang, Zheng-Liang; Yu, Fa-Xin; Zhang, Shu-Ting; Luo, Hao; Wang, Ping-Hui; Zheng, Yao

    GaAs MMICs (Monolithic Microwave Integrated Circuits) reliability is a critical part of the overall reliability of the thermal solution in semiconductor devices. With MMICs reliability improved, GaAs MMICs failure rates will reach levels which are impractical to measure with conventional methods in the near future. This letter proposes a methodology to predict the GaAs MMICs reliability by combining empirical and statistical methods based on zero-failure GaAs MMICs life testing data. Besides, we investigate the effect of accelerated factors on MMICs degradation and make a comparison between the Weibull and lognormal distributions. The method has been used in the reliability evaluation of GaAs MMICs successfully.

  13. Phonon magnification and the Gaussian curvature of the slowness surface in anisotropic media: Detector shape effects with application to GaAs

    NASA Astrophysics Data System (ADS)

    Lax, M.; Narayanamurti, V.

    1980-11-01

    A new short derivation is given for the magnification of photons, phonons, and other wave phenomena in anisotropic media. The results, when specialized to the phonon case, agree with those of Maris and of Philip and Viswanathan. At nondegenerate points the magnification is shown, regardless of the nature of the wave phenomenon, to be expressible in terms of the Gaussian curvature K at the wave vector q--> of the surface ω(q-->)=ω. A representation of K, free of surface coordinates, is given as the cofactor of a 3×3 curvature tensor. The curvature tensor contains information beyond the Jacobian, such as the two principal magnifications for a given mode. Along degenerate directions (such as the [100] direction in cubic crystals) the results, even in the infinitesimal limit, are sensitive to the shape of the detector. Explicit expressions for circular, rectangular and square detectors are given and applied to the case of ballistic phonons in GaAs. Numerical calculation of finite aperture effects indicates significant qualitative as well as quantitative differences with infinitesimal aperture results.

  14. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Pristovsek, Markus; Poser, Florian; Richter, Wolfgang

    2016-07-01

    We studied diffusion by measuring step-bunching, island spacing, and the transition from step-flow growth to two-dimensional island growth of (001) GaAs in metal-organic vapour phase epitaxy and correlated them with the surface reconstruction measured by reflectance anisotropy spectroscopy. The V/III ratio had a small effect, while the square root of the growth rate was anti-proportional to the diffusion length. The thermal activation energy was about 2.3 eV on {{c}}(4× 4) terraces and 1.6 eV on (2× 4) domains at higher temperatures. Pronounced step-bunching coincided with large (4× 2) domains at the step-edges, causing smoother steps for the [11̅0] misorientation. This Ga-rich reconstruction at the step-edges is needed for the Schwoebel barrier to induce step-bunching. At higher temperatures of (2× 4) domains grow in size, the Schwoebel barrier reduces and nucleation becomes easier on this surface which reduces diffusion length and thus step-bunching.

  15. Polymer network/carbon layer on monolith support and monolith catalytic reactor

    DOEpatents

    Nordquist, Andrew Francis; Wilhelm, Frederick Carl; Waller, Francis Joseph; Machado, Reinaldo Mario

    2003-08-26

    The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m.sup.2 /gram as measured by adsorption of N.sub.2 or Kr using the BET method.

  16. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  17. Neutral, Charged and Stratified Polar Monoliths for Hydrophilic Interaction Capillary Electrochromatography

    PubMed Central

    Gunasena, Dilani N.; El Rassi, Ziad

    2013-01-01

    Novel polar monoliths were introduced for hydrophilic interaction capillary electrochromatography (HI-CEC). In one case, a neutral polar monolith resulted from the in situ polymerization of glyceryl methacrylate (GMM) and pentaerythritol triacrylate (PETA) in a ternary porogenic solvent. GMM and PETA possess hydroxyl functional groups, which impart the monolith with hydrophilic interaction sites. This monolith is designated as hydroxy monolith. Although the hydroxy monolith is neutral and void of fixed charges on the surface, a relatively strong cathodal EOF was observed due to the electric double layer formed by the adsorption of ions from the mobile phase, producing a bulk mobile phase flow. The second monolith is charged and referred to as AP-monolith that possesses amine/amide functionalities on its surface, and was prepared by the in situ polymerization of N-(3-aminopropyl) methacrylamide hydrochloride (NAPM) and ethylene dimethacrylate (EDMA) in the presence of cyclohexanol, dodecanol and methanol as porogens. Over the pH range studied a strong anodal EOF was observed. The AP-monolith was further exploited in HI-CEC by modifying its surface with neutral mono- and oligosaccharides to produce a series of the so called sugar modified AP-monoliths (SMAP-monolith), which are considered as stratified hydrophilic monoliths possessing a sub-layer of polar amine/amide groups and a top layer of sugar (a polyhydroxy top layer).The SMAP-monoliths can be viewed as a blend of both the hydroxy monolith and the AP-monolith. The polarity of the various monoliths seems to follow the order: hydroxy monolith < AP-monolith < SMAP-monolith. The novel monoliths were characterized over a wide range of elution conditions with a variety of polar solutes including phenols, substituted phenols, nucleic acid bases, nucleosides and nucleotides PMID:23972465

  18. Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators

    SciTech Connect

    Smith, J.H.; Montague, S.; Sniegowski, J.J.

    1995-08-01

    The monolithic integration of micromechanical devices with their controlling electronics offers potential increases in performance as well as decreases in cost for these devices. Analog Devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia`s Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metallization is replaced by tungsten metallization to allow CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a further development of an approach originally developed at UC Berkeley. Specifically, the issues of yield, repeatability, and uniformity of the tungsten/CMOS approach are addressed. Also, material issues related to the development of high-temperature diffusion barriers, adhesion layers, and low-stress films are discussed. Processing and material issues associated with alternative approaches to this integration such as micromechanics- first, CMOS-last or the interleaved process are also discussed.

  19. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    1986-01-01

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  20. Synthesis and applications of monolithic HPLC columns

    NASA Astrophysics Data System (ADS)

    Liang, Chengdu

    Silica and carbon monolithic columns were synthesized and modified for liquid chromatography applications. Column configurations and cladding techniques were investigated in detail. Three novel approaches have been developed for the synthesis of bimodal porous rods. Out of these three methods, gel-casting was adopted for the synthesis of silica monoliths with ordered mesopores and uniform macropores; the use of colloidal templates and dual phase separation has been successfully implemented for the synthesis of carbon monoliths with well-controlled meso- and macro- porosities. The formation of mesopores in carbon materials has been further studied in the microphase separation of block copolymers. Electrochemical modification of carbon monoliths was discovered to be an efficient method for converting covalently bonded functionalities to carbon monoliths. N,N'-diethylaminobenzene has been attached to carbon surface for the separation of proteins and protein digests. The performances of carbon-based monolithic columns were studied intensely through frontal analysis and Van Deemter plot. Temperature and pressure effects were also investigated in carbon-based columns. The density of bonding on the modified carbon monoliths was characterized by thermogravimetric analysis.

  1. Monolithically integrated microfluidic nanoporous gold disk (NPGD) surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhao, Fusheng; Zeng, Jianbo; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    We present a novel microfluidic surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection. Our sensor design mitigates a common limiting factor in microfluidic SERS sensors that utilize integrated nanostructures: low-efficiency transport of biomolecules to nanostructured surface which adversely impacts sensitivity. Our strategy is to increase the total usable nanostructured surface area, which provides more adsorption sites for biomolecules. Specifically, nanoporous gold disk (NPGD) array, a highly effective SERS substrate, has been monolithically integrated inside a microfluidic chip. Individual NPGD is known to feature an order of magnitude larger surface area than its projected disk area. The increased surface area arises from nanoscale pores and ligaments 3- dimensionally distributed in the NPGD, which manifest themselves as high-density SERS hot-spots. High-density NPGD arrays further guarantee large coverage of these hot-spots on the microchannel floor. The SERS-active NPGD arrays enable highly-reproducible SERS measurements with relative intensity variations from 8% to -8%. R6G solutions in the concentrations ranging from 1 μM to 1 mM have been detected and quantitatively evaluated, and the performance of the sensor in continuous-flow condition has been assessed. Moreover, the sensor's capabilities have been studied by detecting and identifying a physiological metabolite (urea), and the results show lower detection limit compared to best results from most recent work using integrated nanostructured surface inside microchannels. We expect that the sensor would be applicable for detecting, identifying and quantifying molecules for some point-of-care applications, i.e. urine screening.

  2. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  3. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

    NASA Astrophysics Data System (ADS)

    Hollinger, G.; Skheyta-Kabbani, R.; Gendry, M.

    1994-04-01

    The chemical composition of thin native oxide layers grown on GaAs and InAs by ultraviolet (UV)/ozone and thermal oxidation is investigated using x-ray-photoelectron spectroscopy. Core-level binding energies, core-level intensities, and valence-band spectra are compared with data for bulk crystalline binary or ternary As, In, and Ga oxides. The chemical compositions, which vary strongly from GaAs to InAs and from thermal to UV oxidation, appear to be controlled by both thermodynamic and kinetic factors. Only for GaAs thermal oxidation are the products predicted at thermodynamic equilibrium obtained. In all cases the native oxides can be described as single phase nonstoichiometric compounds and not as a macroscopic mixture of stoichiometric binary oxides.

  4. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

    PubMed

    Wu, Jiang; Wang, Zhiming M; Dorogan, Vitaliy G; Li, Shibin; Mazur, Yuriy I; Salamo, Gregory J

    2011-04-01

    The morphology and optical properties of In(0.35)Ga(0.65)As/GaAs quantum dots (QDs) grown on (210), (311)A, (711)A, (731) and (100) substrates are investigated. QDs formed on (210) and (731) oriented substrates are grown by molecular beam epitaxy. Regular QDs are observed on (100), (311)A, and (711)A. Randomly distributed QDs and comet-shaped QDs form on (210) and (731) substrates, respectively. A high density of QDs on the order of 10(11) cm(-2) are obtained from (711)A. The optical measurement shows a spectrum linewidth (FWHM = 74.3 nm) of QDs on GaAs (210) three times wider than GaAs (100) substrate. Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications.

  5. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2015-03-01

    We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

  6. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  7. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  9. New Monolithic Dome Schools.

    ERIC Educational Resources Information Center

    Parker, Freda

    2000-01-01

    Discusses how the Grand Meadow (Minnesota) school district got more than twice the grant money asked for from the state's legislature as well as voter approval for five new $8 million monolithic domes for their K-12 facility. Three additional school district successes in developing monolithic domes for their schools are examined. (GR)

  10. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    SciTech Connect

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  11. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  12. Hydrophobic-hydrophilic monolithic dual-phase layer for two-dimensional thin-layer chromatography coupled with surface-enhanced Raman spectroscopy detection.

    PubMed

    Zheng, Binxing; Liu, Yanhua; Li, Dan; Chai, Yifeng; Lu, Feng; Xu, Jiyang

    2015-08-01

    Hydrophobic-hydrophilic monolithic dual-phase plates have been prepared by a two-step polymerization method for two-dimensional thin-layer chromatography of low-molecular-weight compounds, namely, several dyes. The thin 200 μm poly(glycidyl methacrylate-co-ethylene dimethacrylate) layers attached to microscope glass plates were prepared using a UV-initiated polymerization method within a simple glass mold. After cutting and cleaning the specific area of the layer, the reassembled mold was filled with a polymerization mixture of butyl methacrylate and ethylene dimethacrylate and subsequently irradiated with UV light. During the second polymerization process, the former layer was protected from the UV light with a UV mask. After extracting the porogens and hydrolyzing the poly(glycidyl methacrylate-co-ethylene dimethacrylate) area, these two-dimensional layers were used to separate a mixture of dyes with great difference in their polarity using reversed-phase chromatography mode within the hydrophobic layer and then hydrophilic interaction chromatography mode along the hydrophilic area. In the latter dimension only the specific spot was developed further. Detection of the separated dyes could be achieved with surface-enhanced Raman spectroscopy.

  13. An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3

    NASA Astrophysics Data System (ADS)

    Shirakashi, J.-I.; Matsumoto, K.; Konagai, M.

    Under appropriate bias conditions in ambient humidity, AFM can be used to selectively oxidize the surface of electronic materials such as metals and semiconductors. Therefore, an AFM-based surface modification technique would be a powerful tool for fabricating nanometer-sized metal (M)/insulator (I) or semiconductor (S)/insulator (I) junction structures. Heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3 is also of great interest for application to novel device structures, because the carrier concentration is comparable to that of normal metals. Selective surface oxidation of carbon-doped p-type GaAs was achieved using a negatively biased conductive tip. The oxidation shown here was carried out under 20-25% ambient humidity. By changing the applied bias voltage and the scanning speed of the cantilever, the size of the modified structure wires was precisely controlled, with a feature size of 10 nm. These results suggest that GaAs-based devices with ultra-small SIS junction systems could be realized using the AFM-based surface oxidation process.

  14. Monolithic NPG nanoparticles with large surface area, tunable plasmonics, and high-density internal hot-spots.

    PubMed

    Zhao, Fusheng; Zeng, Jianbo; Parvez Arnob, Md Masud; Sun, Po; Qi, Ji; Motwani, Pratik; Gheewala, Mufaddal; Li, Chien-Hung; Paterson, Andrew; Strych, Uli; Raja, Balakrishnan; Willson, Richard C; Wolfe, John C; Lee, T Randall; Shih, Wei-Chuan

    2014-07-21

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interactions as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of nanoporous gold disks can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. Furthermore, nanoporous gold disks can be fabricated as either bound on a surface or as non-aggregating colloidal suspension with high stability.

  15. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    PubMed

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection. PMID:26375576

  16. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    PubMed

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection.

  17. Phase and gain control of GaAs MMIC transmit-receive modules by optical means

    NASA Astrophysics Data System (ADS)

    Herczfeld, P. R.; Daryoush, A.; Jemison, W.; Rosen, Arye; Paolella, A.

    The authors report on the optical phase and gain control of GaAs microwave monolithic integrated-circuit (MMIC) transmit-receive modules with applications for active phased-array antennas. Phase shifts of 45 degrees were obtained with 50 mW of optical power, and amplifier gain was controlled 15 dB with 250 mW of light intensity. It is concluded that this approach can be extended to the millimeter wave range, is compatible with GaAs MMICs, has potential for fast response, is cost effective, and is compatible with parallel optical processing.

  18. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

    NASA Astrophysics Data System (ADS)

    Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.

    2010-10-01

    We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ =1300 nm and T=4.2 K.

  19. Improved monolithic tandem solar cell

    SciTech Connect

    Wanlass, M.W.

    1991-04-23

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

  20. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  1. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    NASA Astrophysics Data System (ADS)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  2. Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Chen, Y. C.; Bhattacharya, P. K.; Tsukamoto, S.

    1989-01-01

    Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

  3. Advanced on-chip divider for monolithic microwave VCO's

    NASA Technical Reports Server (NTRS)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  4. Preparation of polyhedral oligomeric silsesquioxane based imprinted monolith.

    PubMed

    Li, Fang; Chen, Xiu-Xiu; Huang, Yan-Ping; Liu, Zhao-Sheng

    2015-12-18

    Polyhedral oligomeric silsesquioxane (POSS) was successfully applied, for the first time, to prepare imprinted monolithic column with high porosity and good permeability. The imprinted monolithic column was synthesized with a mixture of PSS-(1-Propylmethacrylate)-heptaisobutyl substituted (MA 0702), naproxon (template), 4-vinylpyridine, and ethylene glycol dimethacrylate, in ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). The influence of synthesis parameters on the retention factor and imprinting effect, including the amount of MA 0702, the ratio of template to monomer, and the ratio of monomer to crosslinker, was investigated. The greatest imprinting factor on the imprinted monolithic column prepared with MA 0702 was 22, about 10 times higher than that prepared in absence of POSS. The comparisons between MIP monoliths synthesized with POSS and without POSS were made in terms of permeability, column efficiency, surface morphology and pore size distribution. In addition, thermodynamic and Van Deemter analysis were used to evaluate the POSS-based MIP monolith.

  5. Growth of silver nanowires on GaAs wafers.

    PubMed

    Sun, Yugang

    2011-05-01

    Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electrons in the semi-insulating GaAs wafers that can lead to the formation of a low-density of nuclei that facilitate their anisotropic growth into nanowires. The resulting Ag nanowires exhibit rough surfaces and reasonably good electric conductivity. These characteristics are beneficial to sensing applications based on single-nanowire surface-enhanced Raman scattering (SERS) and possible surface-adsorption-induced conductivity variation.

  6. Monolithic microwave integrated circuits

    NASA Astrophysics Data System (ADS)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  7. Catalytic Ignition and Upstream Reaction Propagation in Monolith Reactors

    NASA Technical Reports Server (NTRS)

    Struk, Peter M.; Dietrich, Daniel L.; Miller, Fletcher J.; T'ien, James S.

    2007-01-01

    Using numerical simulations, this work demonstrates a concept called back-end ignition for lighting-off and pre-heating a catalytic monolith in a power generation system. In this concept, a downstream heat source (e.g. a flame) or resistive heating in the downstream portion of the monolith initiates a localized catalytic reaction which subsequently propagates upstream and heats the entire monolith. The simulations used a transient numerical model of a single catalytic channel which characterizes the behavior of the entire monolith. The model treats both the gas and solid phases and includes detailed homogeneous and heterogeneous reactions. An important parameter in the model for back-end ignition is upstream heat conduction along the solid. The simulations used both dry and wet CO chemistry as a model fuel for the proof-of-concept calculations; the presence of water vapor can trigger homogenous reactions, provided that gas-phase temperatures are adequately high and there is sufficient fuel remaining after surface reactions. With sufficiently high inlet equivalence ratio, back-end ignition occurs using the thermophysical properties of both a ceramic and metal monolith (coated with platinum in both cases), with the heat-up times significantly faster for the metal monolith. For lower equivalence ratios, back-end ignition occurs without upstream propagation. Once light-off and propagation occur, the inlet equivalence ratio could be reduced significantly while still maintaining an ignited monolith as demonstrated by calculations using complete monolith heating.

  8. Computational study of the Effect of Sulfur Passivation on GaAs Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Yu, Ted; Laghuvamarapu, Ramesh; Yan, Liang; You, Wei; Huffaker, Diana; Ratsch, Christian

    2013-03-01

    We report DFT calculations that study the effect of sulfur passivation ((NH4)2 S and octanethiol) on GaAs surfaces. Sulfur passivation of GaAs solar cells is an area of interest, as it improves the I-V characteristics of heterojunctions by decreasing the density of surface states. We elucidate the fundamental mechanism of sulfur passivation on GaAs by showing how the sulfur species react with different reconstructed GaAs (100) and (111B) surfaces. Using state of the art hybrid functionals to calculate band structures and density of states, we find that a reconstructed GaAs surface does not have mid-gap surface states. Therefore, we show that sulfur passivation does not reduce surface states on reconstructed surfaces. We also study arsenic vacancies and adatoms on these surfaces to determine the energies of creating these imperfections. They lead to mid-gap surface states that are shown to be energetically plausible in certain GaAs surface reconstruction. We study the most energetically favorable surface reconstructions with As vacancies and show how sulfur passivation plays a role in removing surface states. These results will guide in the selection of passivating agents for GaAs solar cells and lead to a better understanding of such systems. We appreciate the support of the NSF, Grant Number: DMR-1125931

  9. High-contrast grating reflectors for 980 nm vertical-cavity surface-emitting lasers

    NASA Astrophysics Data System (ADS)

    Gebski, M.; Kuzior, O.; Wasiak, M.; Szerling, A.; Wójcik-Jedlińska, A.; Pałka, N.; Dems, M.; Xie, Y. Y.; Xu, Z. J.; Wang, Q. J.; Zhang, D. H.; Czyszanowski, T.

    2015-02-01

    This paper presents results of computer simulation of 1D monolithic high refractive index contrast grating (MHCG) reflector also called surface grating reflector (SGR). We analyzed optical properties of the GaAs reflector designed for 980 nm wavelength with respect to the grating parameters variation. We also determined the electric field patterns after reflection from the structure in several cases of parameters variation. We show that thanks to the scalability and design simplicity, proposed design is a promising candidate for simple, next generation vertical cavity surface emitting lasers emitting from ultra-violet to infrared.

  10. Photoinitiated grafting of porous polymer monoliths and thermoplastic polymers for microfluidic devices

    DOEpatents

    Frechet, Jean M. J.; Svec, Frantisek; Rohr, Thomas

    2008-10-07

    A microfluidic device preferably made of a thermoplastic polymer that includes a channel or a multiplicity of channels whose surfaces are modified by photografting. The device further includes a porous polymer monolith prepared via UV initiated polymerization within the channel, and functionalization of the pore surface of the monolith using photografting. Processes for making such surface modifications of thermoplastic polymers and porous polymer monoliths are set forth.

  11. Facile fabrication of mesoporous poly(ethylene-co-vinyl alcohol)/chitosan blend monoliths.

    PubMed

    Wang, Guowei; Xin, Yuanrong; Uyama, Hiroshi

    2015-11-01

    Poly(ethylene-co-vinyl alcohol) (EVOH)/chitosan blend monoliths were fabricated by thermally-induced phase separation method. Chitosan was successfully incorporated into the polymeric monolith by selecting EVOH as the main component of the monolith. SEM images exhibit that the chitosan was located on the inner surface of the monolith. Fourier-transform infrared analysis and elemental analysis indicate the successful blend of EVOH and chitosan. BET results show that the blend monoliths had high specific surface area and uniform mesopore structure. Good adsorption ability toward various heavy metal ions was found in the blend monoliths due to the large chelation capacity of chitosan. The blend monoliths have potential application for waste water purification or bio-related applications.

  12. Development and characterization of methacrylate-based hydrazide monoliths for oriented immobilization of antibodies.

    PubMed

    Brne, P; Lim, Y-P; Podgornik, A; Barut, M; Pihlar, B; Strancar, A

    2009-03-27

    Convective interaction media (CIM; BIA Separations) monoliths are attractive stationary phases for use in affinity chromatography because they enable fast affinity binding, which is a consequence of convectively enhanced mass transport. This work focuses on the development of novel CIM hydrazide (HZ) monoliths for the oriented immobilization of antibodies. Adipic acid dihydrazide (AADH) was covalently bound to CIM epoxy monoliths to gain hydrazide groups on the monolith surface. Two different antibodies were afterwards immobilized to hydrazide functionalized monolithic columns and prepared columns were tested for their selectivity. One column was further tested for the dynamic binding capacity. PMID:19203754

  13. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  14. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H.; Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V.; Katzenstein, A. L.; Sofferman, D. L.; Goldman, R. S.

    2013-09-02

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  15. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    NASA Technical Reports Server (NTRS)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1983-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.

  16. A two-stage monolithic buffer amplifier for 20 GHz satellite communication

    NASA Technical Reports Server (NTRS)

    Petersen, W. C.; Gupta, A. K.

    1983-01-01

    Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.

  17. A GaAs phononic crystal with shallow noncylindrical holes.

    PubMed

    Petrus, Joseph A; Mathew, Reuble; Stotz, James A H

    2014-02-01

    A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid:H2O2 etching procedure and a photolithographed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.

  18. SEMICONDUCTOR DEVICES: Design and optimization of a monolithic GalnP/GalnAs tandem solar cell

    NASA Astrophysics Data System (ADS)

    Han, Zhang; Nuofu, Chen; Yu, Wang; Zhigang, Yin; Xlngwang, Zhang; Huiwei, Shi; Yanshuo, Wang; Tianmao, Huang

    2010-08-01

    We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate.

  19. Ex Situ Integration of Multifunctional Porous Polymer Monoliths into Thermoplastic Microfluidic Chips

    PubMed Central

    Kendall, Eric L.; Wienhold, Erik; Rahmanian, Omid D.; DeVoe, Don L.

    2014-01-01

    A unique method for incorporating functional porous polymer monolith elements into thermoplastic microfluidic chips is described. Monolith elements are formed in a microfabricated mold, rather than within the microchannels, and chemically functionalized off chip before insertion into solvent-softened thermoplastic microchannels during chip assembly. Because monoliths may be trimmed prior to final placement, control of their size, shape, and uniformity is greatly improved over in-situ photopolymerization methods. A characteristic trapezoidal profile facilitates rapid insertion and enables complete mechanical anchoring of the monolith periphery, eliminating the need for chemical attachment to the microchannel walls. Off-chip processing allows the parallel preparation of monoliths of differing compositions and surface chemistries in large batches. Multifunctional flow-through arrays of multiple monolith elements are demonstrated using this approach through the creation of a fluorescent immunosensor with integrated controls, and a microfluidic bubble separator comprising a combination of integrated hydrophobic and hydrophilic monolith elements. PMID:25018587

  20. Monolithic MACS micro resonators

    NASA Astrophysics Data System (ADS)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  1. Monolithic MACS micro resonators.

    PubMed

    Lehmann-Horn, J A; Jacquinot, J-F; Ginefri, J C; Bonhomme, C; Sakellariou, D

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1/P is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4mm rotor at 500MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials. PMID:27544845

  2. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  3. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  4. High gain single GaAs nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Wang, Hao

    2013-08-01

    An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

  5. Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

    NASA Technical Reports Server (NTRS)

    Siegel, Peter; Schlecht, Erich; Mehdi, Imran; Gill, John; Velebir, James; Tsang, Raymond; Dengler, Robert; Lin, Robert

    2010-01-01

    This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows

  6. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  7. High efficiency GaAs/Ge monolithic tandem solar cells

    NASA Technical Reports Server (NTRS)

    Tobin, S. P.; Vernon, S. M.; Bajgar, C.; Haven, V. E.; Geoffroy, L. M.; Sanfacon, M. M.; Lillington, D. R.; Hart, R. E., Jr.

    1988-01-01

    Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

  8. Finite element analysis of monolithic solid oxide fuel cells

    SciTech Connect

    Saigal, A. . Dept. of Mechanical Engineering); Majumdar, S. )

    1992-01-01

    This paper investigates the stress and fracture behavior of a monolithic solid oxide fuel cell (MSOFC) currently under joint development by Allied Signal Corporation and Argonne National Laboratory. The MSOFC is an all-ceramic fuel cell capable of high power density and tolerant of a variety of hydrocarbon fuels, making it potentially attractive for stationary utility and mobile transportation systems. The monolithic design eliminates inactive structural supports, increases active surface area, and lowers voltage losses caused by internal resistance.

  9. Finite element analysis of monolithic solid oxide fuel cells

    SciTech Connect

    Saigal, A.; Majumdar, S.

    1992-04-01

    This paper investigates the stress and fracture behavior of a monolithic solid oxide fuel cell (MSOFC) currently under joint development by Allied Signal Corporation and Argonne National Laboratory. The MSOFC is an all-ceramic fuel cell capable of high power density and tolerant of a variety of hydrocarbon fuels, making it potentially attractive for stationary utility and mobile transportation systems. The monolithic design eliminates inactive structural supports, increases active surface area, and lowers voltage losses caused by internal resistance.

  10. Monolithic Continuous-Flow Bioreactors

    NASA Technical Reports Server (NTRS)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  11. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  12. Terahertz pulse detection by the GaAs Schottky diodes

    NASA Astrophysics Data System (ADS)

    Laperashvili, Tina; Kvitsiani, Orest; Imerlishvili, Ilia; Laperashvili, David

    2010-06-01

    We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

  13. Anisotropically structured magnetic aerogel monoliths

    NASA Astrophysics Data System (ADS)

    Heiligtag, Florian J.; Airaghi Leccardi, Marta J. I.; Erdem, Derya; Süess, Martin J.; Niederberger, Markus

    2014-10-01

    Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture.Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture. Electronic supplementary information (ESI) available: Digital photographs of dispersions and gels with different water-to-ethanol ratios; magnetic measurements of an anatase aerogel containing 0.25 mol% Fe3O4 nanoparticles; XRD patterns of the iron oxide and

  14. Steam reforming of n-hexane on pellet and monolithic catalyst beds. A comparative study on improvements due to heat transfer

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Monolithic catalysts with higher available active surface areas and better thermal conductivity than conventional pellets beds, making possible the steam reforming of fuels heavier than naphtha, were examined. Performance comparisons were made between conventional pellet beds and honeycomb monolith catalysts using n-hexane as the fuel. Metal-supported monoliths were examined. These offer higher structural stability and higher thermal conductivity than ceramic supports. Data from two metal monoliths of different nickel catalyst loadings were compared to pellets under the same operating conditions. Improved heat transfer and better conversion efficiencies were obtained with the monolith having higher catalyst loading. Surface-gas interaction was observed throughout the length of the monoliths.

  15. Experimental and computational investigation of flow in catalytic monolith channels

    SciTech Connect

    Wilson, G.C.; Bardon, M.F.; Witton, J.J. Cranfield Inst. of Technology )

    1992-01-01

    Monolith optimization is necessary for maximum efficiency during catalytic combustion. This paper describes a study undertaken to investigate the flow in catalytic monolith channels. A super-scale model of a single passage in a ceramic catalyst monolith was constructed and studied using pure air as the working fluid. Combustion of a representative natural gas mixture at the catalyst surface was simulated by electrical heating of the channel walls. The flow-field was probed with hot wire anemometers and fine wire thermocouples to obtain velocity and temperature data. Concurrently, the PHOENICS CFD package was used to model the flow. Results confirmed the presence of secondary flows and illustrated the effects of channel shape. The results are discussed as to their relevance to the design of a monolithic combustor for gas turbine applications. 15 refs.

  16. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  17. Spatial and temporal distribution of the leaching of surface applied tracers from an irrigated monolith of a loamy vineyard soil.

    PubMed

    Bloem, E; Hermon, K M; de Rooij, G H; Stagnitti, F

    2014-01-01

    Fresh water scarcity is an increasing problem worldwide. Strategies to alleviate water scarcity include the use of low-quality water for irrigation. The risk of groundwater contamination by pollutants in this water is affected by soil heterogeneity and preferential flow. These risk factors can be assessed by measuring the spatio-temporal redistribution of uniformly applied water and solutes. We placed a soil monolith (height 29 cm) from an Australian vineyard on a 100-cell multi-compartment sampler (MCS). At this vineyard, treated wastewater is used in response to the severe shortage of water in the summer. We studied the leaching risk associated with heterogeneous or preferential flow by irrigating the soil column with 24 applications to simulate one year. We applied simulated rainfall as well as wastewater (which contained chloride) during summer while relying on rainfall only in winter. We compared the chloride leaching with the leaching of bromide, which was applied during one of the applications as a pulse. During the entire simulated year, leaching of solutes from the monolith was measured. The results indicate that the assumption of uniform flow would underestimate the risk for the fresh groundwater reserves: 25% of the solutes are transported though 6% of the soil's cross-section. The spatial distribution of drainage and solute leaching varied little during the experiment. Consequently, the mass flux density pattern of the bromide pulse was comparable to that of the repeatedly applied chloride. However, the MCS data suggested lateral 'escape' from chloride to non-mobile areas, which means in the long run, considerable quantities of these solutes can build up in areas that do not receive irrigation water.

  18. Combining thermodynamic simulations, element and surface analytics to study U(VI) retention in corroded cement monoliths upon >20 years of leaching

    NASA Astrophysics Data System (ADS)

    Bube, C.; Metz, V.; Schild, D.; Rothe, J.; Dardenne, K.; Lagos, M.; Plaschke, M.; Kienzler, B.

    Retention or release of radionuclides in a deep geological repository for radioactive wastes strongly depends on the geochemical environment and on the interaction with near-field components, e.g. waste packages and backfill materials. Deep geological disposal in rock salt is one of the concepts considered for cemented low- and intermediate-level wastes. Long-term experiments were performed to observe the evolution of full-scale cemented waste simulates (doped with (NH4)2U2O7) upon reaction with relevant salt brines, e.g. MgCl2-rich and saturated NaCl solutions, and to examine the binding mechanisms of uranium. Throughout the experiments, concentrations of major solution components, uranium and pH values were monitored regularly and compared to thermodynamic equilibrium calculations, which indicate that close-to-equilibrium conditions have been achieved after 13-14 years duration of the leaching experiments. Two of the full-scale cemented waste simulates were recovered from the solutions after 17-18 years and studied by different analytical methods to characterize the solids, especially with respect to uranium incorporation. In drill core fragments of various lateral and horizontal positions of the corroded monoliths, U-rich aggregates were detected and analyzed by means of space-resolved techniques. Raman, μ-XANES and μ-XRD analyses of several aggregates demonstrate that they consist of an amorphous diuranate-type solid. Within error, calculated U solubilities controlled by Na-diuranate (Na2U2O7·H2O) are consistent with measured U concentrations in both, the NaCl and the MgCl2-system. Since uranophane occurs also in the corroded monoliths, it is proposed that a transition towards the thermodynamic equilibrium U(VI) phase is kinetically hindered.

  19. Spatial and temporal distribution of the leaching of surface applied tracers from an irrigated monolith of a loamy vineyard soil.

    PubMed

    Bloem, E; Hermon, K M; de Rooij, G H; Stagnitti, F

    2014-01-01

    Fresh water scarcity is an increasing problem worldwide. Strategies to alleviate water scarcity include the use of low-quality water for irrigation. The risk of groundwater contamination by pollutants in this water is affected by soil heterogeneity and preferential flow. These risk factors can be assessed by measuring the spatio-temporal redistribution of uniformly applied water and solutes. We placed a soil monolith (height 29 cm) from an Australian vineyard on a 100-cell multi-compartment sampler (MCS). At this vineyard, treated wastewater is used in response to the severe shortage of water in the summer. We studied the leaching risk associated with heterogeneous or preferential flow by irrigating the soil column with 24 applications to simulate one year. We applied simulated rainfall as well as wastewater (which contained chloride) during summer while relying on rainfall only in winter. We compared the chloride leaching with the leaching of bromide, which was applied during one of the applications as a pulse. During the entire simulated year, leaching of solutes from the monolith was measured. The results indicate that the assumption of uniform flow would underestimate the risk for the fresh groundwater reserves: 25% of the solutes are transported though 6% of the soil's cross-section. The spatial distribution of drainage and solute leaching varied little during the experiment. Consequently, the mass flux density pattern of the bromide pulse was comparable to that of the repeatedly applied chloride. However, the MCS data suggested lateral 'escape' from chloride to non-mobile areas, which means in the long run, considerable quantities of these solutes can build up in areas that do not receive irrigation water. PMID:24638830

  20. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J.; Bauhahn, P.

    1983-01-01

    Key requirements for a 30 GHz GaAs monolithic receive module for spaceborne communication antenna feed array applications include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five-bit phase shifter, and a maximum power consumption of 250 mW. The RF designs for each of the four submodules (low noise amplifier, some gain control, phase shifter, and RF to IF sub-module) are presented. Except for the phase shifter, high frequency, low noise FETs with sub-half micron gate lengths are employed in the submodules. For the gain control, a two stage dual gate FET amplifier is used. The phase shifter is of the passive switched line type and consists of 5-bits. It uses relatively large gate width FETs (with zero drain to source bias) as the switching elements. A 20 GHz local oscillator buffer amplifier, a FET compatible balanced mixer, and a 5-8 GHz IF amplifier constitute the RF/IF sub-module. Phase shifter fabrication using ion implantation and a self-aligned gate technique is described. Preliminary RF results obtained on such phase shifters are included.

  1. Monolithic microfluidic concentrators and mixers

    DOEpatents

    Frechet, Jean M.; Svec, Frantisek; Yu, Cong; Rohr, Thomas

    2005-05-03

    Microfluidic devices comprising porous monolithic polymer for concentration, extraction or mixing of fluids. A method for in situ preparation of monolithic polymers by in situ initiated polymerization of polymer precursors within microchannels of a microfluidic device and their use for solid phase extraction (SPE), preconcentration, concentration and mixing.

  2. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  3. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  4. Design of monoliths through their mechanical properties.

    PubMed

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  5. Improvement of interface electronic properties of GaF 3/GaAs MIS structures

    NASA Astrophysics Data System (ADS)

    Ricard, H.; Aizawa, K.; Ishiwara, H.

    The interface electronic properties of GaF 3/GaAs structures are investigated for three different deposition procedures, the GaF 3 films have been deposited on n-type GaAs epitaxial layers without breaking the vacuum, or after being exposed to air, or after being treated in (NH 4) 2S 1 solution. It has been found from low-temperature C-V measurements in MIS diodes that a real modulation of the Fermi level in the forbidden band gap of GaAs occurs only when the GaAs epitaxial layer is treated in the sulfur solution and annealed at an optimum temperature prior to deposition of GaF 3. The unpinning mechanism is also discussed in conjunction with the simplified model for sulfur-treated GaAs surfaces.

  6. ZnSe Films in GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Kachare, Ram H.

    1987-01-01

    ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

  7. Measuring Carrier Lifetime in GaAs by Luminescence

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1986-01-01

    Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.

  8. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2015-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  9. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2016-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  10. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  11. [Preparation of a novel polymer monolith using atom transfer radical polymerization method for solid phase extraction].

    PubMed

    Shen, Ying; Qi, Li; Qiao, Juan; Mao, Lanqun; Chen, Yi

    2013-04-01

    In this study, a novel polymer monolith based solid phase extraction (SPE) material has been prepared by two-step atom transfer radical polymerization (ATRP) method. Firstly, employing ethylene glycol dimethacrylate (EDMA) as a cross-linker, a polymer monolith filled in a filter head has been in-situ prepared quickly under mild conditions. Then, the activators generated by electron transfer ATRP (ARGET ATRP) was used for the modification of poly(2-(dimethylamino)ethyl-methacrylate) (PDMAEMA) on the monolithic surface. Finally, this synthesized monolith for SPE was successfully applied in the extraction and enrichment of steroids. The results revealed that ATRP can be developed as a facile and effective method with mild reaction conditions for monolith construction and has the potential for preparing monolith in diverse devices.

  12. Characterization of methacrylate chromatographic monoliths bearing affinity ligands.

    PubMed

    Černigoj, Urh; Vidic, Urška; Nemec, Blaž; Gašperšič, Jernej; Vidič, Jana; Lendero Krajnc, Nika; Štrancar, Aleš; Podgornik, Aleš

    2016-09-16

    We investigated effect of immobilization procedure and monolith structure on chromatographic performance of methacrylate monoliths bearing affinity ligands. Monoliths of different pore size and various affinity ligands were prepared and characterized using physical and chromatographic methods. When testing protein A monoliths with different protein A ligand densities, a significant nonlinear effect of ligand density on dynamic binding capacity (DBC) for IgG was obtained and accurately described by Langmuir isotherm curve enabling estimation of protein A utilization as a function of ligand density. Maximal IgG binding capacity was found to be at least 12mg/mL exceeding theoretical monolayer adsorption value of 7.8mg/mL assuming hexagonal packing and IgG hydrodynamic diameter of 11nm. Observed discrepancy was explained by shrinkage of IgG during adsorption on protein A experimentally determined through calculated adsorbed IgG layer thickness of 5.4nm from pressure drop data. For monoliths with different pore size maximal immobilized densities of protein A as well as IgG dynamic capacity linearly correlates with monolith surface area indicating constant ligand utilization. Finally, IgGs toward different plasma proteins were immobilized via the hydrazide coupling chemistry to provide oriented immobilization. DBC was found to be flow independent and was increasing with the size of bound protein. Despite DBC was lower than IgG capacity to immobilized protein A, ligand utilization was higher. PMID:27554023

  13. GaAs and 3-5 compound solar cells status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.

    1984-01-01

    Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

  14. Sol-gel derived ? thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Arscott, S.; Smith, N.; Kurchania, R.; Milne, S. J.; Miles, R. E.

    1998-02-01

    Sol-gel derived thin films of lead zirconate titanate (PZT) have been fabricated on a platinized GaAs substrate using a propane-1,3-diol based sol-gel route. PZT can be used as the piezoelectric component in bulk acoustic wave devices for monolithic microwave integrated circuit applications. A 100 nm silicon nitride buffer layer was deposited onto the GaAs by plasma-enhanced chemical vapour deposition in order to prevent gallium and arsenic outdiffusion during film fabrication. Rapid thermal processing (RTP) techniques were employed to decompose thermally the sol-gel layer to PZT in a further effort to minimize problems of gallium and arsenic outdiffusion. Adhesion between the bottom electrode and substrate was found to improve when an intermediate titanium layer deposited between the platinum and silicon nitride was oxidized prior to deposition of the platinum electrode. A crystalline PZT film was produced on the 0268-1242/13/2/016/img9 substrate configuration by firing the sol-gel coating at 0268-1242/13/2/016/img10C for 10 s using RTP. A single deposition of sol resulted in a film having a thickness of 0268-1242/13/2/016/img11. Ferroelectric hysteresis measurements yielded average values of remanant polarization and coercive field of 0268-1242/13/2/016/img12 and 0268-1242/13/2/016/img13 respectively.

  15. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  16. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  17. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  18. Monolithic microextraction tips by emulsion photopolymerization.

    PubMed

    Liang, Shih-Shin; Chen, Shu-Hui

    2009-03-20

    Monoliths formed by photopolymerization are excellent means for fabricating functional elements in miniaturized microdevices such as microextraction tips which are becoming important for sample preparation. Various silica-based and polymer-based materials have been used to fabricate monoliths with through pores of several nm to 4 microm. However, the back pressure created by such methods is still considered to be high for microtips that use suction forces to deliver the liquid. In this study, we demonstrated that emulsion techniques such as oil-in-water can be used to form monoliths with large through pores (>20 microm), and with rigid structures on small (10 microL) and large (200 microL) pipette tips by photopolymerization. We further showed that, with minor modifications, various functionalized particles (5-20 microm) can be added to form stable emulsions and successfully encapsulated into the monoliths for qualitative and quantitative solid-phase microextractions for a diverse application. Due to high permeability and large surface area, quick equilibration can be achieved by pipetting to yield high recovery rates. Using tryptic digests of ovalbumin as the standard, we obtained a recovery yield of 90-109% (RSD: 10-16%) with a loading capacity of 3 mug for desalting tips immobilized with C18 beads. Using tryptic digests of beta-casein and alpha-casein as standards, we showed that phosphopeptides were substantially enriched by tips immobilized with immobilized metal affinity chromatography or TiO(2) materials. Using estrogenic compounds as standards, we obtained a recovery yield of 95-108% (RSD: 10-12%) and linear calibration curves ranging from 5 to 100 ng (R(2)>0.99) for Waters Oasis HLB tips immobilized with hydrophilic beads. PMID:19203757

  19. Optimal parameters of monolithic high-contrast grating mirrors.

    PubMed

    Marciniak, Magdalena; Gębski, Marcin; Dems, Maciej; Haglund, Erik; Larsson, Anders; Riaziat, Majid; Lott, James A; Czyszanowski, Tomasz

    2016-08-01

    In this Letter a fully vectorial numerical model is used to search for the construction parameters of monolithic high-contrast grating (MHCG) mirrors providing maximal power reflectance. We determine the design parameters of highly reflecting MHCG mirrors where the etching depth of the stripes is less than two wavelengths in free space. We analyze MHCGs in a broad range of real refractive index values corresponding to most of the common optoelectronic materials in use today. Our results comprise a complete image of possible highly reflecting MHCG mirror constructions for potential use in optoelectronic devices and systems. We support the numerical analysis by experimental verification of the high reflectance via a GaAs MHCG designed for a wavelength of 980 nm.

  20. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

    SciTech Connect

    Schmidbauer, M.; Seydmohamadi, Sh.; Wang, Zh.M.; Mazur, Yu.I.; Salamo, G.J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2006-02-17

    Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

  1. Comparison of soil-monolith extraction techniques

    NASA Astrophysics Data System (ADS)

    Meissner, R.; Rupp, H.; Weller, U.; Vogel, H.-J.

    2009-04-01

    the soil monolith employing a rotary cutting system. This procedure should avoid structural damages and substantially reduces the necessary technical expenditure during monolith extraction. This "cutting" technology has been used successfully for different soil types (from gravel to sand to clay including contaminated sites) and for different lysimeter sizes (surface area 0.1-2 m2 and depths of 0.5-3.0 m). There is evidence in literature that lateral water and solute fluxes cannot - or only insufficient - be examined with conventional lysimeters. Lateral fluxes are of particular importance in groundwater dominated systems, as peat soils (fens or Histosols). To investigate lateral transport processes a box-shaped stainless steel lysimeter vessel (4 m long, 1 m width and 1.5 m depth) was constructed. The most challenging task of the extraction procedure was the horizontal sliding of the lysimeter vessel through the natural peat soil. At the front of the vessel a cutting tool assists in carving the soil monolith out of the peat, both vertically and at the base of the vessel. The yet unfilled vessel was inserted at the extraction site into an already prepared starting pit and aligned to a guiding system (guide tracks) adjustable in three axes. Serrated knife bars were used for cutting. A hydraulic plunger was used to support the cutting procedure. The whole horizontal extraction technology will be described and demonstrated. For the evaluation of the different extraction technologies with respect to the potential disturbance of soil structure we applied the different techniques for the same soil type (Eutric Fluvisol). At natural site conditions soil monoliths with the same size have been extracted with the "hammering", the "pressing" and the "cutting" technology. The soil structure close to the vessel wall was recorded using X-ray tomography at a resolution of some 0.1 mm. The results will be demonstrated and discussed.

  2. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  3. Relationship between planar GaAs nanowire growth direction and substrate orientation

    NASA Astrophysics Data System (ADS)

    Dowdy, Ryan S.; Walko, Donald A.; Li, Xiuling

    2013-01-01

    Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of <111> B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

  4. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we

  5. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.; Romero, M. J.

    2007-01-01

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include

  6. Comparison of perfusion media and monoliths for protein and virus-like particle chromatography.

    PubMed

    Wu, Yige; Abraham, Dicky; Carta, Giorgio

    2016-05-20

    Structural and performance characteristics of perfusion chromatography media (POROS HS 20 and 50) and those of a polymethacrylate monolith (CIM SO3-1 tube monolith column) are compared for protein and virus-like particle chromatography using 1mL columns. Axial flow columns are used for POROS while the monolith has a radial flow configuration, which provides comparable operating pressures. The POROS beads contain a bimodal distribution of pore sizes, some as large as 0.5μm, which allow a small fraction of the mobile phase to flow within the particles, while the monolith contains 1-2μm flow channels. For proteins (lysozyme and IgG), the dynamic binding capacity of the POROS columns is more than twice that of the monolith at longer residence times. While the DBC of the POROS HS 50 column decreases at shorter residence times, the DBC of the POROS HS 20 column for IgG remains nearly twice that of the monolith at residence times at least as low as 0.2min as a result of intraparticle convection. Protein recoveries are comparable for all three columns. For VLPs, however, the eluted peaks are broader and recovery is lower for the monolith than for the POROS columns and is dependent on the direction of flow in the monolith, which is attributed to denser layer observed by SEM at the inlet surface of the monolith that appears to trap VLPs when loading in the normal flow direction. PMID:27106397

  7. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure.

    PubMed

    Sun, Xiaoxia; Uyama, Hiroshi

    2013-10-04

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields.

  8. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure

    PubMed Central

    2013-01-01

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields. PMID:24093494

  9. Synthesis of transparent nanocomposite monoliths for gamma scintillation

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Hajagos, Tibor J.; Kishpaugh, David; Jin, Yunxia; Hu, Wei; Chen, Qi; Pei, Qibing

    2015-08-01

    During the past decade, inorganic nanoparticles/polymer nanocomposites have been intensively studied to provide a low cost, high performance alternative for gamma scintillation. However, the aggregation of nanoparticles often occurs even at low nanoparticle concentrations and thus deteriorates the transparency and performance of these nanocomposite scintillators. Here we report an efficient fabrication protocol of transparent nanocomposite monoliths based on surface modified hafnium oxide nanoparticles. Using hafnium oxide nanoparticles with surface-grafted methacrylate groups, highly transparent bulk-size nanocomposite monoliths (2 mm thick, transmittance at 550 nm >75%) are fabricated with nanoparticle loadings up to 40 wt% (net hafnium wt% up to 28.5%). These nanocomposite monoliths of 1 cm diameter and 2 mm thickness are capable of producing a full energy photopeak for 662 keV gamma rays, with the best deconvoluted photopeak energy resolution reaching 8%.

  10. New Graphene Form of Nanoporous Monolith for Excellent Energy Storage.

    PubMed

    Bi, Hui; Lin, Tianquan; Xu, Feng; Tang, Yufeng; Liu, Zhanqiang; Huang, Fuqiang

    2016-01-13

    Extraordinary tubular graphene cellular material of a tetrahedrally connected covalent structure was very recently discovered as a new supermaterial with ultralight, ultrastiff, superelastic, and excellent conductive characteristics, but no high specific surface area will keep it from any next-generation energy storage applications. Herein, we prepare another new graphene monolith of mesoporous graphene-filled tubes instead of hollow tubes in the reported cellular structure. This graphene nanoporous monolith is also composed of covalently bonded carbon network possessing high specific surface area of ∼1590 m(2) g(-1) and electrical conductivity of ∼32 S cm(-1), superior to graphene aerogels and porous graphene forms self-assembled by graphene oxide. This 3D graphene monolith can support over 10 000 times its own weight, significantly superior to CNT and graphene cellular materials with a similar density. Furthermore, pseudocapacitance-active functional groups are introduced into the new nanoporous graphene monolith as an electrode material in electrochemical capacitors. Surprisingly, the electrode of 3D mesoporous graphene has a specific capacitance of 303 F g(-1) and maintains over 98% retention after 10 000 cycles, belonging to the list for the best carbon-based active materials. The macroscopic mesoporous graphene monolith suggests the great potential as an electrode for supercapacitors in energy storage areas.

  11. Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

    SciTech Connect

    Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

    2011-03-21

    We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

  12. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  13. Monolithic supports with unique geometries and enhanced mass transfer.

    SciTech Connect

    Stuecker, John Nicholas; Ferrizz, Robert Matthew; Cesarano, Joseph, III; Miller, James Edward

    2004-01-01

    The catalytic combustion of natural gas has been the topic of much research over the past decade. Interest in this technology results from a desire to decrease or eliminate the emissions of harmful nitrogen oxides (NOX) from gas turbine power plants. A low-pressure drop catalyst support, such as a ceramic monolith, is ideal for this high-temperature, high-flow application. A drawback to the traditional honeycomb monoliths under these operating conditions is poor mass transfer to the catalyst surface in the straight-through channels. 'Robocasting' is a unique process developed at Sandia National Laboratories that can be used to manufacture ceramic monoliths with alternative 3-dimensional geometries, providing tortuous pathways to increase mass transfer while maintaining low pressure drops. This report details the mass transfer effects for novel 3-dimensional robocast monoliths, traditional honeycomb-type monoliths, and ceramic foams. The mass transfer limit is experimentally determined using the probe reaction of CO oxidation over a Pt / {gamma}-Al{sub 2}O{sub 3} catalyst, and the pressure drop is measured for each monolith sample. Conversion versus temperature data is analyzed quantitatively using well-known dimensionless mass transfer parameters. The results show that, relative to the honeycomb monolith support, considerable improvement in mass transfer efficiency is observed for robocast samples synthesized using an FCC-like geometry of alternating rods. Also, there is clearly a trade-off between enhanced mass transfer and increased pressure drop, which can be optimized depending on the particular demands of a given application.

  14. LPE growth of GaAs1-xSbx

    NASA Astrophysics Data System (ADS)

    Lendvay, E.; Görög, T.; Tóth, A. L.

    1981-06-01

    Single and multilayer ternary GaAs1±xSb x and quaternary AlyGa 1±yAs 1±xSb x systems were grown by LPE onto (100)GaAs substrates, investigating the As-rich side of the phase diagram. The composition of solid phase was investigated by microprobe analysis. Two major observations have been made; (a) GaAs1± xSb x epitaxial layers grown by the usual LPE techniques in the solid composition range of x ≤ 0.1 and above 750°C show mirror like surfaces and practically homogeneous composition. (b) GaAs1±xSb x layers produced by LPE, cooling the system down below this temperature show the presence at least two regions; one rich in As, the other in Sb. Owing to the dislocation network originating as a consequence of the misfit, the surfaces of these layers consists of <110> aligned ridges and elements with cubic symmetry. The formation of Sb-rich (generally GaSb) layer is independent of the melt composition. Its presence was proved by microprobe analysis as well as by optical measurements. Similar observations were made on AlyGa 1± yAs 1± xSb x layers. For the quaternary the critical temperature, in agreement with previously published value, was found to be 715°C. Undoped GaAs1±xSb x layers showed p-type conduction with ϱ 10 -2 Ω cm, p = 5× 10 17-2×10 18 cm -3 and room temperature hole mobility of 260-280 cm 2 V -1 s -1.

  15. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  16. Factorizing monolithic applications

    SciTech Connect

    Hall, J.H.; Ankeny, L.A.; Clancy, S.P.

    1998-12-31

    The Blanca project is part of the US Department of Energy`s (DOE) Accelerated Strategic Computing Initiative (ASCI), which focuses on Science-Based Stockpile Stewardship through the large-scale simulation of multi-physics, multi-dimensional problems. Blanca is the only Los Alamos National Laboratory (LANL)-based ASCI project that is written entirely in C++. Tecolote, a new framework used in developing Blanca physics codes, provides an infrastructure for gluing together any number of components; this framework is then used to create applications that encompass a wide variety of physics models, numerical solution options, and underlying data storage schemes. The advantage of this approach is that only the essential components for the given model need be activated at runtime. Tecolote has been designed for code re-use and to isolate the computer science mechanics from the physics aspects as much as possible -- allowing physics model developers to write algorithms in a style quite similar to the underlying physics equations that govern the computational physics. This paper describes the advantages of component architectures and contrasts the Tecolote framework with Microsoft`s OLE and Apple`s OpenDoc. An actual factorization of a traditional monolithic application into its basic components is also described.

  17. Edge chipping and flexural resistance of monolithic ceramics☆

    PubMed Central

    Zhang, Yu; Lee, James J.-W.; Srikanth, Ramanathan; Lawn, Brian R.

    2014-01-01

    Objective Test the hypothesis that monolithic ceramics can be developed with combined esthetics and superior fracture resistance to circumvent processing and performance drawbacks of traditional all-ceramic crowns and fixed-dental-prostheses consisting of a hard and strong core with an esthetic porcelain veneer. Specifically, to demonstrate that monolithic prostheses can be produced with a much reduced susceptibility to fracture. Methods Protocols were applied for quantifying resistance to chipping as well as resistance to flexural failure in two classes of dental ceramic, microstructurally-modified zirconias and lithium disilicate glass–ceramics. A sharp indenter was used to induce chips near the edges of flat-layer specimens, and the results compared with predictions from a critical load equation. The critical loads required to produce cementation surface failure in monolithic specimens bonded to dentin were computed from established flexural strength relations and the predictions validated with experimental data. Results Monolithic zirconias have superior chipping and flexural fracture resistance relative to their veneered counterparts. While they have superior esthetics, glass–ceramics exhibit lower strength but higher chip fracture resistance relative to porcelain-veneered zirconias. Significance The study suggests a promising future for new and improved monolithic ceramic restorations, with combined durability and acceptable esthetics. PMID:24139756

  18. Pore volume accessibility of particulate and monolithic stationary phases.

    PubMed

    Urban, Jiří

    2015-05-29

    A chromatographic characterization of pore volume accessibility for both particulate and monolithic stationary phases is presented. Size-exclusion calibration curves have been used to determine the pore volume fraction that is accessible for six alkylbenzenes and twelve polystyrene standards in tetrahydrofuran as the mobile phase. Accessible porosity has been then correlated with the size of the pores from which individual compounds are just excluded. I have determined pore volume accessibility of commercially available columns packed with fully and superficially porous particles, as well as with silica-based monolithic stationary phase. I also have investigated pore accessibility of polymer-based monolithic stationary phases. Suggested protocol is used to characterize pore formation at the early stage of the polymerization, to evaluate an extent of hypercrosslinking during modification of pore surface, and to characterize the pore accessibility of monolithic stationary phases hypercrosslinked after an early termination of polymerization reaction. Pore volume accessibility was also correlated to column efficiency of both particulate and monolithic stationary phases. PMID:25892635

  19. Monolithically integrated optical displacement sensor based on triangulation and optical beam deflection.

    PubMed

    Higurashi, E; Sawada, R; Ito, T

    1999-03-20

    A monolithically integrated optical displacement sensor based on triangulation and optical beam deflection is reported. This sensor is simple and consists of only a laser diode, a polyimide waveguide, and a split detector (a pair of photodiodes) upon a GaAs substrate. The resultant prototype device is extremely small (750 microm x 800 microm). Experiments have shown that this sensor can measure the displacement of a mirror with resolution of better than 4 nm. Additionally, we have experimentally demonstrated both axial and lateral displacement measurements when we used a cylindrical micromirror (diameter, 125 microm) as a movable external object. PMID:18305799

  20. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    NASA Technical Reports Server (NTRS)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1984-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

  1. Shear bond strength of indirect composite material to monolithic zirconia

    PubMed Central

    2016-01-01

    PURPOSE This study aimed to evaluate the effect of surface treatments on bond strength of indirect composite material (Tescera Indirect Composite System) to monolithic zirconia (inCoris TZI). MATERIALS AND METHODS Partially stabilized monolithic zirconia blocks were cut into with 2.0 mm thickness. Sintered zirconia specimens were divided into different surface treatment groups: no treatment (control), sandblasting, glaze layer & hydrofluoric acid application, and sandblasting + glaze layer & hydrofluoric acid application. The indirect composite material was applied to the surface of the monolithic zirconia specimens. Shear bond strength value of each specimen was evaluated after thermocycling. The fractured surface of each specimen was examined with a stereomicroscope and a scanning electron microscope to assess the failure types. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey LSD tests (α=.05). RESULTS Bond strength was significantly lower in untreated specimens than in sandblasted specimens (P<.05). No difference between the glaze layer and hydrofluoric acid application treated groups were observed. However, bond strength for these groups were significantly higher as compared with the other two groups (P<.05). CONCLUSION Combined use of glaze layer & hydrofluoric acid application and silanization are reliable for strong and durable bonding between indirect composite material and monolithic zirconia. PMID:27555895

  2. Record Methane Storage in Monolithic and Powdered Activated Carbons

    NASA Astrophysics Data System (ADS)

    Soo, Yuchoong; Nordwald, E.; Hester, B.; Romanos, J.; Isaacson, B.; Stalla, D.; Moore, D.; Kraus, M.; Burress, J.; Dohnke, E.; Pfeifer, P.

    2010-03-01

    The Alliance for Collaborative Research in Alternative Fuel Technology (ALL-CRAFT) has developed activated carbons from corn cob as adsorbent materials for methane gas storage by physisorption at low pressures. KOH activated carbons were compressed into carbon monolith using chemical binders. High pressure methane isotherms up to 250 bar at room temperature on monolithic and powdered activated carbons were measured gravimetrically and volumetrically. Record methane storage capacities of 250 g CH4/kg carbon and 130 g CH4/liter carbon at 35 bar and 293 K have been achieved. BET surface area, porosity, and pore size distributions were measured from sub-critical nitrogen isotherms. Pore entrances were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). A prototype adsorbed natural gas (ANG) tank, loaded with carbon monoliths, was tested in Kansas City.

  3. Formation and properties of porous GaAs

    SciTech Connect

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  4. Recent Progress in Monolithic Silica Columns for High-Speed and High-Selectivity Separations

    NASA Astrophysics Data System (ADS)

    Ikegami, Tohru; Tanaka, Nobuo

    2016-06-01

    Monolithic silica columns have greater (through-pore size)/(skeleton size) ratios than particulate columns and fixed support structures in a column for chemical modification, resulting in high-efficiency columns and stationary phases. This review looks at how the size range of monolithic silica columns has been expanded, how high-efficiency monolithic silica columns have been realized, and how various methods of silica surface functionalization, leading to selective stationary phases, have been developed on monolithic silica supports, and provides information on the current status of these columns. Also discussed are the practical aspects of monolithic silica columns, including how their versatility can be improved by the preparation of small-sized structural features (sub-micron) and columns (1 mm ID or smaller) and by optimizing reaction conditions for in situ chemical modification with various restrictions, with an emphasis on recent research results for both topics.

  5. Recent Progress in Monolithic Silica Columns for High-Speed and High-Selectivity Separations.

    PubMed

    Ikegami, Tohru; Tanaka, Nobuo

    2016-06-12

    Monolithic silica columns have greater (through-pore size)/(skeleton size) ratios than particulate columns and fixed support structures in a column for chemical modification, resulting in high-efficiency columns and stationary phases. This review looks at how the size range of monolithic silica columns has been expanded, how high-efficiency monolithic silica columns have been realized, and how various methods of silica surface functionalization, leading to selective stationary phases, have been developed on monolithic silica supports, and provides information on the current status of these columns. Also discussed are the practical aspects of monolithic silica columns, including how their versatility can be improved by the preparation of small-sized structural features (sub-micron) and columns (1 mm ID or smaller) and by optimizing reaction conditions for in situ chemical modification with various restrictions, with an emphasis on recent research results for both topics. PMID:27306311

  6. On the dissolution properties of GaAs in Ga

    NASA Technical Reports Server (NTRS)

    Davidson, M. C.; Moynahan, A. H.

    1977-01-01

    The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

  7. Incommensurate phase of Te adsorbed on (001) GaAs

    NASA Astrophysics Data System (ADS)

    Cibert, J.; Saminadayar, K.; Tatarenko, S.; Gobil, Y.

    1989-06-01

    Occurrence of commensurate and incommensurate phases is reported for adsorption of Te on Ga-rich (001) GaAs surfaces. The Te coverage is measured directly through x-ray photoelectron spectroscopy, and the incommensurate phase is studied in detail as a function of Te coverage; two regimes are demonstrated, one at low coverage where Te is mainly bound to Ga, and another one at high coverage where Te mainly bound to As is also present.

  8. Monolithical aspherical beam expanding systems

    NASA Astrophysics Data System (ADS)

    Fuchs, U.; Matthias, Sabrina

    2014-10-01

    Beam expanding is a common task, where Galileo telescopes are preferred. However researches and customers have found limitations when using these systems. A new monolithical solution which is based on the usage of only one aspherical component will be presented. It will be shown how to combine up to five monolithical beam expanding systems and to keep the beam quality at diffraction limitation. Insights will be given how aspherical beam expanding systems will help using larger incoming beams and reducing the overall length of such a system. Additionally an add-on element for divergence and wavelength adaption will be presented.

  9. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  10. Direct Cross-Linking of Au/Ag Alloy Nanoparticles into Monolithic Aerogels for Application in Surface-Enhanced Raman Scattering.

    PubMed

    Gao, Xiaonan; Esteves, Richard J Alan; Nahar, Lamia; Nowaczyk, Jordan; Arachchige, Indika U

    2016-05-25

    The direct cross-linking of Au/Ag alloy nanoparticles (NPs) into high surface area, mesoporous Au/Ag aerogels via chemical oxidation of the surface ligands is reported. The precursor alloy NPs with composition-tunable morphologies were produced by galvanic replacement of the preformed Ag hollow NPs. The effect of Au:Ag molar ratio on the NP morphology and surface plasmon resonance has been thoroughly investigated and resulted in smaller Au/Ag alloy NPs (4-8 nm), larger Au/Ag alloy hollow NPs (40-45 nm), and Au/Ag alloy hollow particles decorated with smaller Au NPs (2-5 nm). The oxidative removal of surfactant ligands, followed by supercritical drying, is utilized to construct large (centimeter to millimeter) self-supported Au/Ag alloy aerogels. The resultant assemblies exhibit high surface areas (67-73 m(2)/g), extremely low densities (0.051-0.055 g/cm(3)), and interconnected mesoporous (2-50 nm) networks, making them of great interest for a number of new technologies. The influence of mesoporous gel morphology on surface-enhanced Raman scattering (SERS) has been studied using Rhodamine 101 (Rd 101) as the probe molecule. The alloy aerogels exhibit SERS signal intensities that are 10-42 times higher than those achieved from the precursor Au/Ag alloy NPs. The Au/Ag alloy aerogel III exhibits SERS sensing capability down to 1 nM level. The increased signal intensities attained for alloy aerogels are attributed to highly porous gel morphology and enhanced surface roughness that can potentially generate a large number of plasmonic hot spots, creating efficient SERS substrates for future applications. PMID:27142886

  11. Initial adsorption of Cr atoms on GaAs(0 0 1)

    NASA Astrophysics Data System (ADS)

    Yagyu, Kazuma; Komamiya, Daisuke; Yoshino, Junji

    2011-01-01

    Cr-adsorbed GaAs(0 0 1)-c(4×4)α surfaces were investigated in view of a preparatory stage before studying the growth of zincblende CrAs. Cr was adsorbed on a GaAs(001)-c(4×4)α surface at 200 °C followed by annealing for 2 min. Cr adsorbed surface was investigated with scanning tunneling microscopy at 80 K. Single Cr atom was identified after the classification of Cr dots grown on the surface. The results have suggested that a Cr atom adsorbs on a site between three Ga-As dimers. After further adsorption of Cr, the surface is covered by dots which are higher than a step height of the substrate.

  12. Resonant Transport in Nb/gaas/algaas/gaas Microstructures

    NASA Astrophysics Data System (ADS)

    Giazotto, F.; Pingue, P.; Beltram, F.; Lazzarino, M.; Orani, D.; Rubini, S.; Franciosi, A.

    2003-03-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs in presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in all-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  13. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  14. Encapsulated subwavelength grating as a quasi-monolithic resonant reflector.

    PubMed

    Brückner, Frank; Friedrich, Daniel; Britzger, Michael; Clausnitzer, Tina; Burmeister, Oliver; Kley, Ernst-Bernhard; Danzmann, Karsten; Tünnermann, Andreas; Schnabel, Roman

    2009-12-21

    For a variety of laser interferometric experiments, the thermal noise of high-reflectivity multilayer dielectric coatings limits the measurement sensitivity. Recently, monolithic high-reflection waveguide mirrors with nanostructured surfaces have been proposed to reduce the thermal noise in interferometric measurements. Drawbacks of this approach are a highly complicated fabrication process and the high susceptibility of the nanostructured surfaces to damage and pollution. Here, we propose and demonstrate a novel quasi-monolithic resonant surface reflector that also avoids the thick dielectric stack of conventional mirrors but has a flat and robust surface. Our reflector is an encapsulated subwavelength grating that is based on silicon. We measured a high reflectivity of 93% for a wavelength of lambda = 1.55 microm under normal incidence. Perfect reflectivities are possible in theory.

  15. Macroscopic Carbon Nanotube-based 3D Monoliths.

    PubMed

    Du, Ran; Zhao, Qiuchen; Zhang, Na; Zhang, Jin

    2015-07-15

    Carbon nanotubes (CNTs) are one of the most promising carbon allotropes with incredible diverse physicochemical properties, thereby enjoying continuous worldwide attention since their discovery about two decades ago. From the point of view of practical applications, assembling individual CNTs into macroscopic functional and high-performance materials is of paramount importance. For example, multiscaled CNT-based assemblies including 1D fibers, 2D films, and 3D monoliths have been developed. Among all of these, monolithic 3D CNT architectures with porous structures have attracted increasing interest in the last few years. In this form, theoretically all individual CNTs are well connected and fully expose their surfaces. These 3D architectures have huge specific surface areas, hierarchical pores, and interconnected conductive networks, resulting in enhanced mass/electron transport and countless accessible active sites for diverse applications (e.g. catalysis, capacitors, and sorption). More importantly, the monolithic form of 3D CNT assemblies can impart additional application potentials to materials, such as free-standing electrodes, sensors, and recyclable sorbents. However, scaling the properties of individual CNTs to 3D assemblies, improving use of the diverse, structure-dependent properties of CNTs, and increasing the performance-to-cost ratio are great unsolved challenges for their real commercialization. This review aims to provide a comprehensive introduction of this young and energetic field, i.e., CNT-based 3D monoliths, with a focus on the preparation principles, current synthetic methods, and typical applications. Opportunities and challenges in this field are also presented.

  16. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  17. X-ray photoelectron spectroscopy studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sone, Syuji; Ekawa, Mitsuru; Yasuda, Kazuhito; Sugiura, Yoshiyuki; Saji, Manabu; Tanaka, Akikazu

    1990-02-01

    Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x-ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitaxy. The stoichiometry of GaAs substrates was found to recover by annealing in the H2 environment (500 °C, 5 min), while the surface was initially in an As-rich condition after etching with H2SO4:H2O2:H2O (5:1:1). The preferential adsorption of Te on the GaAs surface was also observed. <100> oriented growth was obtained routinely when the GaAs surface was fully stabilized with Te after the H2 anneal under the above conditions. <111> oriented growth resulted when dimethylcadmium was first introduced after the anneal.

  18. Catastrophic failure of a monolithic zirconia prosthesis.

    PubMed

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  19. Monolithic Hydrogen Peroxide Catalyst Bed Development

    NASA Technical Reports Server (NTRS)

    Ponzo, J. B.

    2003-01-01

    With recent increased industry and government interest in rocket grade hydrogen peroxide as a viable propellant, significant effort has been expended to improve on earlier developments. This effort has been predominately centered in improving heterogeneous. typically catalyst beds; and homogeneous catalysts, which are typically solutions of catalytic substances. Heterogeneous catalyst beds have traditionally consisted of compressed wire screens plated with a catalytic substance, usually silver, and were used m many RCS applications (X-1, Mercury, and Centaur for example). Aerojet has devised a heterogeneous catalyst design that is monolithic (single piece), extremely compact, and has pressure drops equal to or less than traditional screen beds. The design consists of a bonded stack of very thin, photoetched metal plates, silver coated. This design leads to a high surface area per unit volume and precise flow area, resulting in high, stable, and repeatable performance. Very high throughputs have been demonstrated with 90% hydrogen peroxide. (0.60 lbm/s/sq in at 1775-175 psia) with no flooding of the catalyst bed. Bed life of over 900 seconds has also been demonstrated at throughputs of 0.60 lbm/s/sq in across varying chamber pressures. The monolithic design also exhibits good starting performance, short break-in periods, and will easily scale to various sizes.

  20. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  1. Thick sodium overlayers on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Heinemann, Martina; Scheffler, Matthias

    1994-02-01

    We report density-functional theory calculations of the electronic structure, total energy, and forces for the Na adsorption on GaAs(110) using the local-density approximation of the exchange-correlation functional and ab initio pseudopotentials. Results are presented for coverages ranging from one adatom per substrate surface cell up to the thick overlayer limit. The atomic and electronic structure of the substrate is locally changed by the sodium adsorption on GaAs(110), depending on the coverage. In particular, we analyze the wave-function character of the states at the Fermi level, how it changes with sodium coverage, and we identify the formation of metal induced gap states (MIGS) at the interface. These MIGS are found to have mostly Ga dangling-bond character for all coverages. The calculated values of the p-type Schottky barrier and of the variation of photothreshold as a function of coverage are in good agreement with experimental data.

  2. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  3. Enhanced light absorption in GaAs solar cells with internal Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tobin, S. P.; Vernon, S. M.; Sanfacon, M. M.; Mastrovito, A.

    The use of epitaxial multilayer dielectric mirrors (Bragg reflectors) as back-surface reflectors in thin-film GaAs solar cells on GaAs and silicon substrates is investigated. Al0.3Ga0.9As/Al0.85Ga0.15As Bragg reflectors were grown by low-pressure MOCVD on GaAs substrates and shown to exhibit near-ideal optical reflectance and structural perfection. Thin GaAs solar cells grown on Bragg reflectors showed increases in short-circuit current (0.5 to 1.0 mA/sq cm) and efficiency (0.7 percentage points) relative to cells without back reflectors. Efficiencies of 24.7 percent at one sun AM1.5 were measured for GaAs cells only 2 microns thick on Bragg reflectors. In addition to the optical enhancements, Bragg reflectors also appear to improve the defect structure of GaAs-on-Si solar cells. This approach should lead to improved efficiency for GaAs-on-Si solar cells and improved radiation resistance on GaAs cells.

  4. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  5. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Vernon, S. M.; Wolfson, R. G.; Tobin, S. P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  6. An ultra-sensitive microfluidic immunoassay using living radical polymerization and porous polymer monoliths.

    SciTech Connect

    Abhyankar, Vinay V.; Singh, Anup K.; Hatch, Anson V.

    2010-07-01

    We present a platform that combines patterned photopolymerized polymer monoliths with living radical polymerization (LRP) to develop a low cost microfluidic based immunoassay capable of sensitive (low to sub pM) and rapid (<30 minute) detection of protein in 100 {micro}L sample. The introduction of LRP functionality to the porous monolith allows one step grafting of functionalized affinity probes from the monolith surface while the composition of the hydrophilic graft chain reduces non-specific interactions and helps to significantly improve the limit of detection.

  7. Preparation of phenylboronate affinity rigid monolith with macromolecular porogen.

    PubMed

    Li, Xiang-Jie; Jia, Man; Zhao, Yong-Xin; Liu, Zhao-Sheng; Akber Aisa, Haji

    2016-03-18

    Boronate-affinity monolithic column was first prepared via polystyrene (PS) as porogen in this work. The monolithic polymer was synthetized using 4-vinylphenylboronic acid (4-VPBA) as functional monomer, ethylene glycol dimethacrylate (EDMA) as crosslinker monomer, and a mixture of PS solution in tetrahydrofuran, the linear macromolecular porogen, and toluene as porogen. Isoquercitrin (ISO) and hyperoside (HYP), isomer diol flavonoid glycosides, can be baseline separated on the poly(VPBA-co-EDMA) monolith. The effect of polymerization variables on the selectivity factor, e.g., the ratio of monomer to crosslinker (M/C), the amount of PS and the molecular weight of macromolecular porogen was investigated. The surface properties of the monolithic polymer were characterized by scanning electron microscopy and nitrogen adsorption. The best polymerization condition was the M/C ratio of 7:3, and the PS concentration of 40 mg/ml. The poly(VPBA-co-EDMA) polymer was also applied to extract cis-diol flavonoid glycosides from the crude extraction of cotton flower. After treated by poly(VPBA-co-EDMA) for solid phase extraction, high purity ISO and HYP (>99.96%) can be obtained with recovery of 83.7% and 78.6%, respectively. PMID:26896914

  8. Preparation of phenylboronate affinity rigid monolith with macromolecular porogen.

    PubMed

    Li, Xiang-Jie; Jia, Man; Zhao, Yong-Xin; Liu, Zhao-Sheng; Akber Aisa, Haji

    2016-03-18

    Boronate-affinity monolithic column was first prepared via polystyrene (PS) as porogen in this work. The monolithic polymer was synthetized using 4-vinylphenylboronic acid (4-VPBA) as functional monomer, ethylene glycol dimethacrylate (EDMA) as crosslinker monomer, and a mixture of PS solution in tetrahydrofuran, the linear macromolecular porogen, and toluene as porogen. Isoquercitrin (ISO) and hyperoside (HYP), isomer diol flavonoid glycosides, can be baseline separated on the poly(VPBA-co-EDMA) monolith. The effect of polymerization variables on the selectivity factor, e.g., the ratio of monomer to crosslinker (M/C), the amount of PS and the molecular weight of macromolecular porogen was investigated. The surface properties of the monolithic polymer were characterized by scanning electron microscopy and nitrogen adsorption. The best polymerization condition was the M/C ratio of 7:3, and the PS concentration of 40 mg/ml. The poly(VPBA-co-EDMA) polymer was also applied to extract cis-diol flavonoid glycosides from the crude extraction of cotton flower. After treated by poly(VPBA-co-EDMA) for solid phase extraction, high purity ISO and HYP (>99.96%) can be obtained with recovery of 83.7% and 78.6%, respectively.

  9. Translucency of monolithic and core zirconia after hydrothermal aging

    PubMed Central

    Fathy, Salma M.; El-Fallal, Abeer A.; El-Negoly, Salwa A.; El Bedawy, Abu Baker

    2015-01-01

    Abstract Objective: To evaluate the hydrothermal aging effect on the translucency of partially stabilized tetragonal zirconia with yttria (Y-TZP) used as monolithic or fully milled zirconia and of core type. Methods: Twenty disc-shaped specimens (1 and 10 mm) for each type of monolithic and core Y-TZP materials were milled and sintered according to the manufacturer’s instruction. The final specimens were divided into two groups according to the type of Y-TZP used. Translucency parameter (TP) was measured over white and black backgrounds with the diffuse reflectance method; X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to analyze the microstructure of both Y-TZP types before and after aging. Data for TP values was statistically analyzed using Student’s t-test. Results: Monolithic Y-TZP showed the highest TP mean value (16.4 ± 0.316) before aging while core Y-TZP showed the lowest TP mean value (7.05 ± 0.261) after aging. There was a significant difference between the two Y-TZP types before and after hydrothermal aging. XRD analysis showed increases in monoclinic content in both Y-TZP surfaces after aging. Conclusion: Monolithic Y-TZP has a higher chance to low-temperature degradation than core type, which may significantly affect the esthetic appearance and translucency hence durability of translucent Y-TZP. PMID:27335897

  10. Monolithic-integrated microlaser encoder.

    PubMed

    Sawada, R; Higurashi, E; Ito, T; Ohguchi, O; Tsubamoto, M

    1999-11-20

    We have developed an extremely small integrated microencoder whose sides are less than 1 mm long. It is 1/100 the size of conventional encoders. This microencoder consists of a laser diode, monolithic photodiodes, and fluorinated polyimide waveguides with total internal reflection mirrors. The instrument can measure the relative displacement between a grating scale and the encoder with a resolution of the order of 0.01 microm; it can also determine the direction in which the scale is moving. By using the two beams that were emitted from the two etched mirrors of the laser diode, by monolithic integration of the waveguide and photodiodes, and by fabrication of a step at the edge of the waveguide, we were able to eliminate conventional bulky optical components such as the beam splitter, the quarter-wavelength plate, bulky mirrors, and bulky photodetectors. PMID:18324228

  11. Modified energetics and growth kinetics on H-terminated GaAs (110)

    SciTech Connect

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

    2013-10-28

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  12. Monolithic pattern-sensitive detector

    DOEpatents

    Berger, Kurt W.

    2000-01-01

    Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

  13. Clickable Periodic Mesoporous Organosilica Monolith for Highly Efficient Capillary Chromatographic Separation.

    PubMed

    Wu, Ci; Liang, Yu; Yang, Kaiguang; Min, Yi; Liang, Zhen; Zhang, Lihua; Zhang, Yukui

    2016-02-01

    A novel clickable periodic mesoporous organosilica monolith with the surface area up to 1707 m(2) g(-1) was in situ synthesized in the capillary by the one-step condensation of the organobridged-bonded alkoxysilane precursor bis(triethoxysilyl)ethylene. With Si-C bonds in the skeleton, the monolith possesses excellent chemical and mechanical stability. With vinyl groups highly loaded and homogeneously distributed throughout the structure, the monolith can be readily functionalized with functional groups by effective thiol-ene "click" chemistry reaction. Herein, with "click" modification of C18, the obtained monolith was successfully applied for capillary liquid chromatographic separation of small molecules and proteins. The column efficiency could reach 148,000 N/m, higher than most reported hybrid monoliths. Moreover, intact proteins could be separated well with good reproducibility, even after the monolithic column was exposed by basic mobile phase (pH 10.0) overnight, demonstrating the great promising of such monolith for capillary chromatographic separation. PMID:26751092

  14. Monolith froth reactor: Development of a novel three-phase catalytic system

    SciTech Connect

    Crynes, L.L.; Cerro, R.L.; Abraham, M.A. . Dept. of Chemical Engineering)

    1995-02-01

    The monolith froth reactor, involving two-phase flow and a monolith catalyst, is developed. The flow within monolith channels, consisting of trains of gas bubbles and liquid slugs, is produced by forming a two-phase froth in a chamber immediately below the bottom of the monolith. The froth then flows upward into the monolith channels through pressure forces, which differs from previous methods since it may be carried out for a commercial-scale reactor. Because the liquid film which develops between the gas phase and the surface of the catalyst is extremely thin, two-phase flow within a monolith can provide reaction rates which are near their intrinsic values. Catalytic oxidation of aqueous phenol over copper oxide supported on [gamma]-Al[sub 2]O[sub 3] is used as a model reaction for investigating reactor performance. Generation of a froth is confirmed by visual inspection; the average bubble size is approximately that predicted by a force balance. The effect of externally controllable process variables (liquid and gas flow rates, temperature, and pressure) on the rate of phenol oxidation was investigated. Reaction rate increases with temperature or pressure increase and decreases with gas flow rate increase, achieving a maximum with respect to liquid flow rate. The activation energy calculated from the apparent reaction rate measured in the monolith froth reactor is similar to that of intrinsic value, suggesting minimal mass-transfer limitations.

  15. Clickable Periodic Mesoporous Organosilica Monolith for Highly Efficient Capillary Chromatographic Separation.

    PubMed

    Wu, Ci; Liang, Yu; Yang, Kaiguang; Min, Yi; Liang, Zhen; Zhang, Lihua; Zhang, Yukui

    2016-02-01

    A novel clickable periodic mesoporous organosilica monolith with the surface area up to 1707 m(2) g(-1) was in situ synthesized in the capillary by the one-step condensation of the organobridged-bonded alkoxysilane precursor bis(triethoxysilyl)ethylene. With Si-C bonds in the skeleton, the monolith possesses excellent chemical and mechanical stability. With vinyl groups highly loaded and homogeneously distributed throughout the structure, the monolith can be readily functionalized with functional groups by effective thiol-ene "click" chemistry reaction. Herein, with "click" modification of C18, the obtained monolith was successfully applied for capillary liquid chromatographic separation of small molecules and proteins. The column efficiency could reach 148,000 N/m, higher than most reported hybrid monoliths. Moreover, intact proteins could be separated well with good reproducibility, even after the monolithic column was exposed by basic mobile phase (pH 10.0) overnight, demonstrating the great promising of such monolith for capillary chromatographic separation.

  16. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions.

  17. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions. PMID:15354560

  18. Transparent monolithic metal ion containing nanophase aerogels

    SciTech Connect

    Risen, W. M., Jr.; Hu, X.; Ji, S.; Littrell, K.

    1999-12-01

    The formation of monolithic and transparent transition metal containing aerogels has been achieved through cooperative interactions of high molecular weight functionalized carbohydrates and silica precursors, which strongly influence the kinetics of gelation. After initial gelation, subsequent modification of the ligating character of the system, coordination of the group VIII metal ions, and supercritical extraction afford the aerogels. The structures at the nanophase level have been probed by photon and electron transmission and neutron scattering techniques to help elucidate the basis for structural integrity together with the small entity sizes that permit transparency in the visible range. They also help with understanding the chemical reactivities of the metal-containing sites in these very high surface area materials. These results are discussed in connection with new reaction studies.

  19. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  20. Fracture Strength of Aged Monolithic and Bilayer Zirconia-Based Crowns.

    PubMed

    Lameira, Deborah Pacheco; Buarque e Silva, Wilkens Aurélio; Andrade e Silva, Frederico; De Souza, Grace M

    2015-01-01

    The purpose of this study was to evaluate the effect of design and surface finishing on fracture strength of yttria-tetragonal zirconia polycrystal (Y-TZP) crowns in monolithic (1.5 mm thickness) and bilayer (0.8 mm zirconia coping and 0.7 mm porcelain veneer) configuration after artificial aging. Bovine incisors received crown preparation and Y-TZP crowns were manufactured using CAD/CAM technique, according to the following groups (n = 10): Polished monolithic zirconia crowns (PM); Glazed monolithic zirconia crowns (GM); Bi-layer crowns (BL). Crowns were cemented with resin cement, submitted to artificial aging in a chewing simulator (2.5 million cycles/80 N/artificial saliva/37 °C), and tested for fracture strength. Two remaining crowns referring to PM and GM groups were submitted to a chemical composition analysis to measure the level of yttrium after aging. One-way ANOVA and Tukey's test (P = .05) indicated that monolithic zirconia crowns presented similar fracture strength (PM = 3476.2 N ± 791.7; GM = 3561.5 N ± 991.6), which was higher than bilayer crowns (2060.4 N ± 810.6). There was no difference in the yttrium content among the three surfaces evaluated in the monolithic crowns. Thus, monolithic zirconia crowns present higher fracture strength than bilayer veneered zirconia after artificial aging and surface finishing does not affect their fracture strength. PMID:26576423

  1. Counterflow isotachophoresis in a monolithic column.

    PubMed

    Liu, Bingwen; Cong, Yongzheng; Ivory, Cornelius F

    2014-09-01

    This study describes stationary counterflow isotachophoresis (ITP) in a poly(acrylamide-co-N,N'-methylenebisacrylamide) monolithic column as a means for improving ITP processing capacity and reducing dispersion. The flow profile in the monolith was predicted using COMSOL's Brinkman Equation application mode, which revealed that the flow profile was mainly determined by monolith permeability. As monolith permeability decreases, the flow profile changes from a parabolic shape to a plug shape. An experimental monolithic column was prepared in a fused-silica capillary using an ultraviolet-initiated polymerization method. A monolithic column made from 8% (wt.) monomer was chosen for the stationary counterflow ITP experiments. Counterflow ITP in the monolithic column showed undistorted analyte zones with significantly reduced dispersion compared to the severe dispersion observed in an open capillary. Particularly, for r-phycoerythrin focused by counterflow ITP, its zone width in the monolithic column was only one-third that observed in an open capillary. These experiments demonstrate that stationary counterflow ITP in monoliths can be a robust and practical electrofocusing method.

  2. Arsenic volatilization of GaAs photocathode at low temperature during thermal cleaning

    NASA Astrophysics Data System (ADS)

    Liu, Hui; Shi, Feng; Miao, Zhuang; Gao, Xiang; Cheng, Hong-chang; Niu, Sen; Wang, Long; Chen, Chang

    2014-09-01

    The gallium arsenide (GaAs) photocathode was generally cleaned by radiant heating, direct heating, ion bombardment annealing, and so on. In this paper, the radiant heating method, namely thermal cleaning method, was adopted for GaAs photocathode surface purification. Using this method could obtain an atomic clean surface, ensure the integrity of the GaAs surface lattice, and guarantee the uniformity of surface cleaning effect at the same time. But because the accurate measurement of the GaAs photocathode surface temperature in the vacuum system was very difficult, the residual gas analyzer (RGA) was used in this experiment to monitor the residual gas composition in ultrahigh vacuum during the thermal cleaning process and determine the thermal cleaning temperature by the partial pressure curves of As and Ga. It was found that the first peaks of As and Ga elements both appeared after heating about one hour, accompanied with H2O, N2/CO, CO2 and other common gas. According to partial pressure curves of H2O, N2/CO, CO2 and the heating time, it could be judged that the temperature at that time was not high, which should be under 150°C.After thermal cleaning experiment of three GaAs photocathodes, it was found that the peak value of As partial pressure at low temperature was generally within 10-11mbar~10-10mbar, and the peak value was at 10-10mbar at high temperature. Sometimes it was appeared that the peak value of As partial pressure at low temperature was even higher than the peak value at high temperature. The As volatilization phenomenon occurred at low temperature indicated that the elemental As exist on the GaAs photocathode surface or near surface after the chemical etching process, and the As could volatilize from GaAs photocathode at low temperature in the beginning of thermal cleaning. This research has guiding significance for further understanding the thermal cleaning mechanism of GaAs photocathode and improving the thermal cleaning technology.

  3. The chemistry of O in reduction processes of the GaAs native oxides

    NASA Astrophysics Data System (ADS)

    Cuberes, M. T.; Sacedon, J. L.

    1992-05-01

    We present an X-ray photoelectron spectroscopy (XPS) study of the interfacial chemical reactions during the total reduction of a 5 Å thick GaAs native oxide layer accomplished in two separate stages. First, the As2O3 has been selectively reduced by annealing the oxidized surface at increasing temperatures. In the second stage, the reduction of the Ga oxides has been completed at room temperature by Si deposition. The total amount of O at the GaAs interface remains constant during both processes. During the As2O3 thermal reduction, the analysis of the Ga2p{3}/{2} and Ga LMM spectra shows that, depending on the annealing temperature, GaOx (x < {3}/{2}) or Ga2O3 growth occurs. The Si promoted of the Ga oxides results in the formation of Si oxides of different stoichiometry at the GaAs surface.

  4. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  5. Free carrier induced spectral shift for GaAs filled metallic hole arrays.

    PubMed

    Zhang, Jingyu; Xiang, Bin; Sheik-Bahae, Mansoor; Brueck, S R J

    2012-03-26

    For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

  6. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  7. The ZnSe(110) puzzle - Comparison with GaAs(110)

    NASA Technical Reports Server (NTRS)

    Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

    1984-01-01

    The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

  8. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    NASA Astrophysics Data System (ADS)

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-01

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1) compared to experimental 0.035 eV (285.2 cm-1). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  9. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  10. One-pot synthesis of a new high vinyl content hybrid silica monolith dedicated to nanoliquid chromatography.

    PubMed

    Racha, El-Debs; Gay, Pauline; Dugas, Vincent; Demesmay, Claire

    2016-03-01

    A new vinyltrimethoxysilane-based hybrid silica monolith was developed and used as a reversed-phase capillary column. The synthesis of this rich vinyl hybrid macroporous monolith, by cocondensation of vinyltrimethoxysilane with tetramethoxysilane, was investigated using an unconventional (formamide, nitric acid) porogen/catalyst system. A macroporous hybrid silica monolith with 80% in mass of vinyltrimethoxysilane in the feeding silane solution was obtained and compared to a more conventional low vinyl content hybrid monolith with only of 20% vinyltrimethoxysilane. Monoliths were characterized by scanning electron microscopy, (29) Si nuclear magnetic resonance spectroscopy and N2 adsorption-desorption. About 80% of the vinyl precursor was incorporated in the final materials, leading to 15.9 and 61.5% of Si atoms bonded to vinyl groups for 20% vinyltrimethoxysilane and 80% vinyltrimethoxysilane, respectively. The 80% vinyltrimethoxysilane monolith presents a lower surface area than 20% vinyltrimethoxysilane (159 versus 551 m(2) /g), which is nevertheless compensated by a higher vinyl surface density. Chromatographic properties were evaluated in reversed-phase mode. Plots of ln(k) versus percentage of organic modifier were used to assess the reversed-phase mechanism. Its high content of organic groups leads to high retention properties. Column efficiencies of 170 000 plates/m were measured for this 80% vinyltrimethoxysilane hybrid silica monolith. Long capillary monolithic columns (90 cm) were successfully synthesized (N = 120 000).

  11. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth.

  12. GaAs clean up studied with synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Tallarida, Massimo; Adelmann, Christoph; Delabie, Annelies; van Elshocht, Sven; Caymax, Matty; Schmeisser, Dieter

    2012-12-01

    In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable to determine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques.

  13. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers

    NASA Astrophysics Data System (ADS)

    Lee, Kyusang; Zimmerman, Jeramy D.; Xiao, Xin; Sun, Kai; Forrest, Stephen R.

    2012-02-01

    We demonstrate repeated use of GaAs wafers for multiple growths by employing lattice-matched epitaxial protection layers to preserve the wafer surface in its original condition following their etch removal after growth. The protection layers provide a regrowth surface that eliminates the need for repolishing prior to subsequent growth. Between growths, the protection layers are removed by wet chemical etching. The resulting surface quality is examined using atomic force microscope and energy dispersive spectrometry. We show that the surface roughness, chemical composition, morphology, and electronic properties of the GaAs surface after protection-layer removal are comparable to that of the original substrate surface. We show that p-n junction GaAs solar cells grown on original and reused wafers have nearly identical performance with power conversion efficiencies of ˜23%, under simulated 1 sun illumination, AM1.5 G. The high power conversion efficiency of GaAs solar cells combined with reduced costs associated with multiple parent wafer reuses promise cost competitiveness with incumbent solar cell technologies.

  14. "Smart" molecularly imprinted monoliths for the selective capture and easy release of proteins.

    PubMed

    Wen, Liyin; Tan, Xinyi; Sun, Qi; Svec, Frantisek; Lv, Yongqin

    2016-08-01

    A new thermally switchable molecularly imprinted monolith for the selective capture and release of proteins has been designed. First, a generic poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith reacted with ethylenediamine followed by functionalization with 2-bromoisobutyryl bromide to introduce the initiator for atom transfer radical polymerization. Subsequently, a protein-imprinted poly(N-isopropylacrylamide) layer was grafted onto the surface of the monolithic matrix by atom transfer radical polymerization. Scanning electron microscopy and energy-dispersive X-ray spectroscopy of the cross-sections of imprinted monoliths confirmed the formation of dense poly(N-isopropylacrylamide) brushes on the pore surface. The imprinted monolith exhibited high specificity and selectivity toward its template protein myoglobin over competing proteins and a remarkably large maximum adsorption capacity of 1641 mg/g. Moreover, this "smart" imprinted monolith featured thermally responsive characteristics that enabled selective capture and easy release of proteins triggered only by change in temperature with water as the mobile phase and avoided use of stronger organic solvents or change in ionic strength and pH. PMID:27352958

  15. Adsorption of Te on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Gobil, Y.; Cibert, J.; Saminadayar, K.; Tatarenko, S.

    1989-04-01

    We present a diagram of the GaAs-Te surface, precursor of the molecular beam epitaxy of CdTe on GaAs(100), as a function of As/Ga stoichiometry and Te coverage. In particular, three new GaAs-Te superstructures are reported: (2 × 1), "Te-poor" (6 × 1) and a (∗ × 3) incommensurate phase. Conditions of formation of the different surfaces are detailed and these surfaces are characterized using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). On these surfaces, tellurium can be adsorbed on different sites: the Te3d {5}/{2} XPS line reveals three components located at 573.0, 572.6 and 572.1 eV which we attribute to Te mainly bound to As, to Ga and to adsorbed Te respectively, the relative population of these states depending on the precursor surface.

  16. Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates

    PubMed Central

    2010-01-01

    We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable for quantum confinement can be fabricated and thus InAs QDs are demonstrated on GaAs (100) surface. On the other hand, at relatively higher substrate temperatures, by enhancing the surface migrations of In adatoms, super lower density of InGaAs ring-shaped nanostructures can be fabricated on GaAs (100). Under an identical growth condition, holed-triangular InGaAs nanostructures can be fabricated on GaAs type-A surfaces, while ring-shaped nanostructures are formed on GaAs (100). The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction. PMID:20671787

  17. Compact monolithic capacitive discharge unit

    DOEpatents

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  18. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  19. Monolithic 20-GHz Transmitting Module

    NASA Technical Reports Server (NTRS)

    Kascak, T.; Kaelin, G.; Gupta, A.

    1986-01-01

    20-GHz monolithic microwave/millimeter-wave integrated circuit (MMIC) with amplification and phase-shift (time-delay) capabilities developed. Use of MMIC module technology promises to make feasible development of weight- and cost-effective phased-array antenna systems, identified as major factor in achieving minimum cost and efficient use of frequency and orbital resources of future generations of communication satellite systems. Use of MMIC transmitting modules provides for relatively simple method for phase-shift control of many separate radio-frequency (RF) signals required for phased-array antenna systems.

  20. Monolithically integrated absolute frequency comb laser system

    DOEpatents

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  1. Focussed ion beam serial sectioning and imaging of monolithic materials for 3D reconstruction and morphological parameter evaluation.

    PubMed

    Vázquez, Mercedes; Moore, David; He, Xiaoyun; Ben Azouz, Aymen; Nesterenko, Ekaterina; Nesterenko, Pavel; Paull, Brett; Brabazon, Dermot

    2014-01-01

    A new characterisation method, based on the utilisation of focussed ion beam-scanning electron microscopy (FIB-SEM), has been employed for the evaluation of morphological parameters in porous monolithic materials. Sample FIB serial sectioning, SEM imaging and image processing techniques were used to extract the pore boundaries and reconstruct the 3D porous structure of carbon and silica-based monoliths. Since silica is a non-conducting material, a commercial silica monolith modified with activated carbon was employed instead to minimise the charge build-up during FIB sectioning. This work therefore presents a novel methodology that can be successfully employed for 3D reconstruction of porous monolithic materials which are or can be made conductive through surface or bulk modification. Furthermore, the 3D reconstructions were used for calculation of the monolith macroporosity, which was in good agreement with the porosity values obtained by mercury intrusion porosimetry (MIP).

  2. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  3. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  4. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules.

  5. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  6. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    SciTech Connect

    Guo, W. Pena, V.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Date, L.; Bao, X.; Sanchez, E.; Vandervorst, W.

    2014-08-11

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

  7. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  8. Facile preparation of organic-silica hybrid monolith for capillary hydrophilic liquid chromatography based on "thiol-ene" click chemistry.

    PubMed

    Chen, Ming-Luan; Zhang, Jun; Zhang, Zheng; Yuan, Bi-Feng; Yu, Qiong-Wei; Feng, Yu-Qi

    2013-04-01

    In this work, a one-step approach to facile preparation of organic-inorganic hybrid monoliths was successfully developed. After vinyl-end organic monomers and azobisisobutyronitrile (AIBN) were mixed with hydrolyzed tetramethoxysilane (TMOS) and 3-mercaptopropyltrimethoxysilane (MPTMS), the homogeneous mixture was introduced into a fused-silica capillary for simultaneous polycondensation and "thiol-ene" click reaction to form the organic-silica hybrid monoliths. By employing this strategy, two types of organic-silica hybrid monoliths with positively charged quaternary ammonium and amide groups were prepared, respectively. The functional groups were successfully introduced onto the monoliths during the sol-gel process with "thiol-ene" click reaction, which was demonstrated by ζ-potential assessment, energy dispersive X-ray spectroscopy (EDX), and Fourier transform infrared (FT-IR) spectroscopy. The porous structure of the prepared monolithic columns was examined by scanning electron microscopy (SEM), nitrogen adsorption-desorption measurement, and mercury intrusion porosimetry. These results indicate the prepared organic-silica hybrid monoliths possess homogeneous column bed, large specific surface area, good mechanical stability, and excellent permeability. The prepared monolithic columns were then applied for anion-exchange/hydrophilic interaction liquid chromatography. Different types of analytes, including benzoic acids, inorganic ions, nucleosides, and nucleotides, were well separated with high column efficiency around 80,000-130,000 plates/m. Taken together, we present a facile and universal strategy to prepare organic-silica hybrid monoliths with a variety of organic monomers using one-step approach.

  9. Facile preparation of organic-silica hybrid monolith for capillary hydrophilic liquid chromatography based on "thiol-ene" click chemistry.

    PubMed

    Chen, Ming-Luan; Zhang, Jun; Zhang, Zheng; Yuan, Bi-Feng; Yu, Qiong-Wei; Feng, Yu-Qi

    2013-04-01

    In this work, a one-step approach to facile preparation of organic-inorganic hybrid monoliths was successfully developed. After vinyl-end organic monomers and azobisisobutyronitrile (AIBN) were mixed with hydrolyzed tetramethoxysilane (TMOS) and 3-mercaptopropyltrimethoxysilane (MPTMS), the homogeneous mixture was introduced into a fused-silica capillary for simultaneous polycondensation and "thiol-ene" click reaction to form the organic-silica hybrid monoliths. By employing this strategy, two types of organic-silica hybrid monoliths with positively charged quaternary ammonium and amide groups were prepared, respectively. The functional groups were successfully introduced onto the monoliths during the sol-gel process with "thiol-ene" click reaction, which was demonstrated by ζ-potential assessment, energy dispersive X-ray spectroscopy (EDX), and Fourier transform infrared (FT-IR) spectroscopy. The porous structure of the prepared monolithic columns was examined by scanning electron microscopy (SEM), nitrogen adsorption-desorption measurement, and mercury intrusion porosimetry. These results indicate the prepared organic-silica hybrid monoliths possess homogeneous column bed, large specific surface area, good mechanical stability, and excellent permeability. The prepared monolithic columns were then applied for anion-exchange/hydrophilic interaction liquid chromatography. Different types of analytes, including benzoic acids, inorganic ions, nucleosides, and nucleotides, were well separated with high column efficiency around 80,000-130,000 plates/m. Taken together, we present a facile and universal strategy to prepare organic-silica hybrid monoliths with a variety of organic monomers using one-step approach. PMID:23434082

  10. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  11. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  12. Magnetic and chemical aspects of Cr-based films grown on GaAs(001)

    NASA Astrophysics Data System (ADS)

    Mosca, D. H.; de Camargo, P. C.; Guimarães, J. L.; Schreiner, W. H.; de Oliveira, A. J. A.; Souza, P. E. N.; Eddrief, M.; Etgens, V. H.

    2005-11-01

    We have investigated the magnetic and chemical properties of very thin films of Cr, CrAs, and arsenized Cr, grown by molecular beam epitaxy on GaAs (001), using x-ray photoemission spectroscopy and SQUID magnetometry. The substrate was kept at 200 °C in an As-rich environment for incoming Cr atoms at the GaAs surface. Gallium segregation and the chemical reactivity between Ga and Cr have negligible contribution to the formation of different thin films. A clear ferromagnetic response, even at room temperature, suggests the formation of a very thin buried interfacial layer during the growth process.

  13. Phase composition gradient in leached polluted cement monoliths

    SciTech Connect

    Leoni, Matteo Scardi, Paolo; Pelosato, Renato; Sora, Isabella Natali; Dotelli, Giovanni; Stampino, Paola Gallo; Presti, Arianna Lo

    2007-11-15

    The long-term behaviour of cement monoliths containing an organic waste, was investigated by means of a 14-month dynamic-leach-testing in deionised water. The degree of hydration and the phase composition were measured by Thermal Analysis (TGA/DTA), X-ray Powder Diffraction (XRD) and Energy Dispersive X-ray Spectroscopy (EDXS). X-ray data, analysed by the Rietveld method, provided a detailed quantitative information on the in-depth crystalline phase distribution in the specimens. Crossed with TGA and spectroscopic data and supported by the results of kinetic/hydration calculations, the diffraction results provide a detailed description of the in-depth phase composition gradient in the leached monoliths. In particular, 14-month old specimens show a clear leaching zone with predominance of CSH and calcite near the surface and low abundance of the other usual cement constituents. The material is not completely effective in retaining the contaminant.

  14. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.

    2004-08-31

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by either fluid or gas pressure against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  15. Mobile Monolith Polymer Elements For Flow Control In Microfluidic Systems

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2006-01-24

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  16. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2005-11-11

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  17. Development of monolithically integrated silicon-film modules

    NASA Astrophysics Data System (ADS)

    Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Lampros, T. H.; Ruffins, T. R.; Hall, R. B.; Barnett, A. M.

    1992-12-01

    Silicon-Film Product III is being developed into a low cost, stable device for large scale terrestrial power applications. The Product III structure is a thin (<100 μm) polycrystalline silicon layer on a non-conductive supporting ceramic substrate as illustrated in Figure 1. The presence of the substrate allows cells to be isolated and interconnected monolithically. The long term goal for the product is over 18% conversion efficiency on areas greater than 1200 cm2. The high efficiency will be based on polycrystalline thin silicon incorporated into a light trapping structure with a passivated back surface. Short term goals are focused on the development of large area ceramics, a monolithic interconnection process, and fabricating 100 cm2 solar cells.

  18. Radially polarized cylindrical vector beams from a monolithic microchip laser

    NASA Astrophysics Data System (ADS)

    Naidoo, Darryl; Fromager, Michael; Ait-Ameur, Kamel; Forbes, Andrew

    2015-11-01

    Monolithic microchip lasers consist of a thin slice of laser crystal where the cavity mirrors are deposited directly onto the end faces. While this property makes such lasers very compact and robust, it prohibits the use of intracavity laser beam shaping techniques to produce complex light fields. We overcome this limitation and demonstrate the selection of complex light fields in the form of vector-vortex beams directly from a monolithic microchip laser. We employ pump reshaping and a thermal gradient across the crystal surface to control both the intensity and polarization profile of the output mode. In particular, we show laser oscillation on a superposition of Laguerre-Gaussian modes of zero radial and nonzero azimuthal index in both the scalar and vector regimes. Such complex light fields created directly from the source could find applications in fiber injection, materials processing and in simulating quantum processes.

  19. Stretchable Superhydrophobicity from Monolithic, Three-Dimensional Hierarchical Wrinkles.

    PubMed

    Lee, Won-Kyu; Jung, Woo-Bin; Nagel, Sidney R; Odom, Teri W

    2016-06-01

    We report the design of three-dimensional (3D) hierarchical wrinkle substrates that can maintain their superhydrophobicity even after being repeatedly stretched. Monolithic poly(dimethysiloxane) with multiscale features showed wetting properties characteristic of static superhydrophobicity with water contact angles (>160°) and very low contact angle hysteresis (<5°). To examine how superhydrophobicity was maintained as the substrate was stretched, we investigated the dynamic wetting behavior of bouncing and splashing upon droplet impact with the surface. On hierarchical wrinkles consisting of three different length scales, superhydrophobic bouncing was observed. The substrate remained superhydrophobic up to 100% stretching with no structural defects after 1000 cycles of stretching and releasing. Stretchable superhydrophobicity was possible because of the monolithic nature of the hierarchical wrinkles as well as partial preservation of nanoscale structures under stretching. PMID:27144774

  20. Stretchable Superhydrophobicity from Monolithic, Three-Dimensional Hierarchical Wrinkles.

    PubMed

    Lee, Won-Kyu; Jung, Woo-Bin; Nagel, Sidney R; Odom, Teri W

    2016-06-01

    We report the design of three-dimensional (3D) hierarchical wrinkle substrates that can maintain their superhydrophobicity even after being repeatedly stretched. Monolithic poly(dimethysiloxane) with multiscale features showed wetting properties characteristic of static superhydrophobicity with water contact angles (>160°) and very low contact angle hysteresis (<5°). To examine how superhydrophobicity was maintained as the substrate was stretched, we investigated the dynamic wetting behavior of bouncing and splashing upon droplet impact with the surface. On hierarchical wrinkles consisting of three different length scales, superhydrophobic bouncing was observed. The substrate remained superhydrophobic up to 100% stretching with no structural defects after 1000 cycles of stretching and releasing. Stretchable superhydrophobicity was possible because of the monolithic nature of the hierarchical wrinkles as well as partial preservation of nanoscale structures under stretching.

  1. Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Yang, Fangfang; Messing, Maria E.; Mergenthaler, Kilian; Pistol, Mats-Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H.; Yartsev, Arkady

    2016-11-01

    In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

  2. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  3. Thermal oxidation of In/sub 2/S/sub 3//GaAs structures

    SciTech Connect

    Mittova, Ya.; Pukhova, V.V.

    1986-11-01

    The purpose of this work is to investigate the effect of indium sulfide, deposited on the surface of GaAs, on the process of oxidation of gallium arsenide, as well as on the composition and some properties of the oxide layers formed.

  4. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

    NASA Astrophysics Data System (ADS)

    Bogumilowicz, Y.; Hartmann, J. M.; Rochat, N.; Salaun, A.; Martin, M.; Bassani, F.; Baron, T.; David, S.; Bao, X.-Y.; Sanchez, E.

    2016-11-01

    We have grown GaAs epitaxial layers on Ge buffers, themselves on Si (001) substrates, using an Applied Materials 300 mm metal organic chemical vapor deposition tool. We varied the Ge buffer thickness between 0.36 and 1.38 μm and studied the properties of a 0.27 μm thick GaAs layer on top. We found that increasing the Ge buffer thickness yielded smoother GaAs films with an rms surface roughness as low as 0.5 nm obtained on a 5×5 μm2 area. The bow of the substrate increased following a linear law with the epitaxial stack thickness up to 240 μm for a 1.65 μm stack. We have also characterized the threading dislocations present in the GaAs layers using X-ray diffraction and cathodoluminescence. Increasing the Ge buffer thickness resulted in lower threading dislocation densities, enabling us to obtain anti-phase boundary - free GaAs films with a threading dislocation density as low as 3×107 cm-2. In addition, atomic force microscopy surface topology measurements showed the presence of pits in the GaAs layers whose density agreed well with other threading dislocation density assessments. It thus seems that threading dislocations can in certain cases induce some growth rate variations, making them visible in as-grown GaAs films. Using thicker Ge buffers results in smoother films with less threading dislocations, with the side effect of increasing the bow on the wafer. If bow is not an issue, this is a practical approach to improve the GaAs (on Ge buffer) on silicon quality.

  5. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  6. GaAs wafer overlay performance affected by annealing heat treatment: II

    NASA Astrophysics Data System (ADS)

    Liu, Ying; Black, Iain

    2002-07-01

    Further analysis on how wafer distortion affecting the overlay performance during annealing treatment in GaAs wafer fabrication was conducted quantitatively using MONO-LITH software. The experimental results were decomposed as wafer translation, scaling at X and Y direction, rotation and orthogonality. The grid residual was used to describe non- correctable distortion of the wafers, which fits the equations given below: Residual equals Measured - Modeled, which is not a modeled component. The Vector Map displays distribution of error vectors over the wafer or field for various components or overall effect. Based on the component analysis that the misalignment caused by translation and scaling can be compensated by heat treatment if the wafer is placed at a favorable orientation. This can help mitigate the effects of substrate quality in manufactory.

  7. GaInP2/GaAs tandem cells for space applications

    NASA Technical Reports Server (NTRS)

    Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Friedman, D. J.

    1991-01-01

    The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

  8. Step bunch assisted two dimensional ordering of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots on vicinal GaAs(001) surfaces

    SciTech Connect

    Hanke, M.; Wang, Zh. M.; Mazur, Yu. I.; Lee, J. H.; Salamo, G. J.; Schmidbauer, M.

    2008-01-21

    We have investigated the self-organized, step bunch assisted formation of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots in vertical superlattices consisting of one, four, eight, and ten periods. Samples were grown by molecular beam epitaxy on vicinal 2 deg. A and 2 deg. B GaAs(001) substrates. Those with miscut along the [110] (2 deg. B) exclusively show step bunches of an aspect ratio larger than 10 but without the formation of quantum dots. This highly linear pattern is improved during subsequent periods as proved by high resolution x-ray diffraction and grazing incidence diffraction. On the other hand, a miscut along the [110] (2 deg. A) initially causes a crosslike pattern of step bunches, which finally becomes a two-dimensional arrangement of individual quantum dots.

  9. Covalent attachment of polymeric monolith to polyether ether ketone (PEEK) tubing.

    PubMed

    Lv, Chunguang; Heiter, Jaana; Haljasorg, Tõiv; Leito, Ivo

    2016-08-17

    A new method of reproducible preparation of vinylic polymeric monolithic columns with a key step of covalently anchoring the monolith to PEEK surface is described. In order to chemically attach the polymer monolith to the tube wall, methacrylate functional groups were introduced onto PEEK surface by a three-step procedure, including surface etching, surface reduction and surface methacryloylation. The chemical state of the modified tubing surface was characterized by attenuated total reflectance infrared (ATR-IR) spectroscopy. It was found that the etching step is the key to successfully modifying the PEEK tubing surface. Poly(styrene-co-divinylbenzene) monoliths were in situ synthesized by thermally initiated free radical copolymerization within the confines of surface-vinylized PEEK tubings of dimensions close to ones conventionally used in HPLC and UHPLC (1.6 mm internal diameter, 10.0-12.5 cm length). Adhesion test was done by measuring the operating pressure drop, which the prepared stationary phases can withstand. Good pressure resistance, up to 140 bar/10 cm (flow rate 0.5 mL min(-1), acetonitrile as a mobile phase), indicates strong bonding of monolith to the tubing wall. The monolithic material was proven to have a permeability of 1.7 × 10 (-14) m(2), applying acetonitrile-water 70:30 (v/v) as a mobile phase. The column performance was reproducible from column to column and was evaluated via the isocratic separation of a series of alkylbenzenes in the reversed-phase mode (acetonitrile-water 70:30, v/v). The numbers of plates per meter at optimal flow rate were found to be between 26 000 and 32 000 for the different analytes.

  10. Covalent attachment of polymeric monolith to polyether ether ketone (PEEK) tubing.

    PubMed

    Lv, Chunguang; Heiter, Jaana; Haljasorg, Tõiv; Leito, Ivo

    2016-08-17

    A new method of reproducible preparation of vinylic polymeric monolithic columns with a key step of covalently anchoring the monolith to PEEK surface is described. In order to chemically attach the polymer monolith to the tube wall, methacrylate functional groups were introduced onto PEEK surface by a three-step procedure, including surface etching, surface reduction and surface methacryloylation. The chemical state of the modified tubing surface was characterized by attenuated total reflectance infrared (ATR-IR) spectroscopy. It was found that the etching step is the key to successfully modifying the PEEK tubing surface. Poly(styrene-co-divinylbenzene) monoliths were in situ synthesized by thermally initiated free radical copolymerization within the confines of surface-vinylized PEEK tubings of dimensions close to ones conventionally used in HPLC and UHPLC (1.6 mm internal diameter, 10.0-12.5 cm length). Adhesion test was done by measuring the operating pressure drop, which the prepared stationary phases can withstand. Good pressure resistance, up to 140 bar/10 cm (flow rate 0.5 mL min(-1), acetonitrile as a mobile phase), indicates strong bonding of monolith to the tubing wall. The monolithic material was proven to have a permeability of 1.7 × 10 (-14) m(2), applying acetonitrile-water 70:30 (v/v) as a mobile phase. The column performance was reproducible from column to column and was evaluated via the isocratic separation of a series of alkylbenzenes in the reversed-phase mode (acetonitrile-water 70:30, v/v). The numbers of plates per meter at optimal flow rate were found to be between 26 000 and 32 000 for the different analytes. PMID:27286776

  11. Feasibility evaluation of the monolithic braided ablative nozzle

    NASA Astrophysics Data System (ADS)

    Director, Mark N.; McPherson, Douglass J., Sr.

    1992-02-01

    The feasibility of the monolithic braided ablative nozzle was evaluated as part of an independent research and development (IR&D) program complementary to the National Aeronautics and Space Administration/Marshall Space Flight Center (NASA/MSFC) Low-Cost, High-Reliability Case, Insulation and Nozzle for Large Solid Rocket Motors (LOCCIN) Program. The monolithic braided ablative nozzle is a new concept that utilizes a continuous, ablative, monolithic flame surface that extends from the nozzle entrance, through the throat, to the exit plane. The flame surface is fabricated using a Through-the-Thickness braided carbon-fiber preform, which is impregnated with a phenolic or phenolic-like resin. During operation, the braided-carbon fiber/resin material ablates, leaving the structural backside at temperatures which are sufficiently low to preclude the need for any additional insulative materials. The monolithic braided nozzle derives its potential for low life cycle cost through the use of automated processing, one-component fabrication, low material scrap, low process scrap, inexpensive raw materials, and simplified case attachment. It also has the potential for high reliability because its construction prevents delamination, has no nozzle bondlines or leak paths along the flame surface, is amenable to simplified analysis, and is readily inspectable. In addition, the braided construction has inherent toughness and is damage-tolerant. Two static-firing tests were conducted using subscale, 1.8 - 2.0-inch throat diameter, hardware. Tests were approximately 15 seconds in duration, using a conventional 18 percent aluminum/ammonium perchlorate propellant. The first of these tests evaluated the braided ablative as an integral backside insulator and exit cone; the second test evaluated the monolithic braided ablative as an integral entrance/throat/exit cone nozzle. Both tests met their objectives. Radial ablation rates at the throat were as predicted, approximately 0.017 in

  12. Preparation and characterization of alkyl methacrylate-based monolithic columns for capillary gas chromatography applications.

    PubMed

    Yusuf, Kareem; Aqel, Ahmad; A L Othman, Zeid; Badjah-Hadj-Ahmed, Ahmed Yacine

    2013-08-01

    Gas chromatography (GC) is considered the least common application of both polymer and silica-based monolithic columns. This study describes the fabrication of alkyl methacrylate monolithic materials for use as stationary phases in capillary gas chromatography. Following the deactivation of the capillary surface with 3-(trimethoxysilyl)propyl methacrylate (TMSM), the monoliths were formed by the co-polymerization of either hexyl methacrylate (HMA) or lauryl methacrylate (LMA) with different percentage of ethylene glycol dimethacrylate (EDMA) in presence of an initiator (azobisisobutyronitrile, AIBN) and a mixture of porogens include 1-propanol, 1,4-butanediol and water. The monoliths were prepared in 500mm length capillaries possessing inner diameters of 250μm. The efficiencies of the monolithic columns for low molecular weight compounds significantly improved as the percentage of crosslinker was increased, because of the greater proportion of pores less than 50nm. The columns containing lower percentages of crosslinker were able to rapidly separate a series of 8 alkane members in 0.7min, but the separation was less efficient for the light alkanes. Columns prepared with the lauryl methacrylate monomer yielded a different morphology for the monolith-interconnected channels. The channels were more branched, which increased the separation time, and unlike the other columns, allowed for temperature programming.

  13. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  14. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  15. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  16. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  17. Calibration Designs for Non-Monolithic Wind Tunnel Force Balances

    NASA Technical Reports Server (NTRS)

    Johnson, Thomas H.; Parker, Peter A.; Landman, Drew

    2010-01-01

    This research paper investigates current experimental designs and regression models for calibrating internal wind tunnel force balances of non-monolithic design. Such calibration methods are necessary for this class of balance because it has an electrical response that is dependent upon the sign of the applied forces and moments. This dependency gives rise to discontinuities in the response surfaces that are not easily modeled using traditional response surface methodologies. An analysis of current recommended calibration models is shown to lead to correlated response model terms. Alternative modeling methods are explored which feature orthogonal or near-orthogonal terms.

  18. Step-step interactions on GaAs (110) nanopatterns

    SciTech Connect

    Galiana, B.; Benedicto, M.; Tejedor, P.

    2013-01-14

    The step-step interactions on vicinal GaAs (110) surface patterns have been extracted from the quantitative analysis of the terrace width distribution (TWD). We have specifically studied the interactions in near-equilibrium faceting and kinetics-driven step bunching and meandering formed by spontaneous self-organization or through the modification of GaAs growth kinetics by atomic hydrogen. We show that the experimental TWDs determined from atomic force microscopy measurements can be accurately described by a weighed sum of a generalized Wigner distribution and several Gaussians. The results of our calculations indicate that straight facets are formed during high temperature homoepitaxy due to attractive interactions between [110] steps. At low temperatures, steady state attractive interactions in [110] step bunches are preceded by a transition regime dominated by entropic and energetic repulsions between meandering [11n]-type steps (n {>=} 2), whose population density exceeds that of the [110] bunched steps. In addition, it has been found that atomic H reduces the attractive interactions between [110] bunched steps and enhances entropic and dipole-induced energetic repulsions between H-terminated [11n] steps through the inhibition of As-As bond formation at step edges. Our analysis has evidenced a correlation between the value of the adjustable parameter that accounts in our model for the specific weight of the secondary peaks in the TWD ({beta}) and the extent of transverse meandering on the vicinal surface.

  19. Monolithic solid electrolyte oxygen pump

    DOEpatents

    Fee, Darrell C.; Poeppel, Roger B.; Easler, Timothy E.; Dees, Dennis W.

    1989-01-01

    A multi-layer oxygen pump having a one-piece, monolithic ceramic structure affords high oxygen production per unit weight and volume and is thus particularly adapted for use as a portable oxygen supply. The oxygen pump is comprised of a large number of small cells on the order of 1-2 millimeters in diameter which form the walls of the pump and which are comprised of thin, i.e., 25-50 micrometers, ceramic layers of cell components. The cell components include an air electrode, an oxygen electrode, an electrolyte and interconnection materials. The cell walls form the passages for input air and for exhausting the oxygen which is transferred from a relatively dilute gaseous mixture to a higher concentration by applying a DC voltage across the electrodes so as to ionize the oxygen at the air electrode, whereupon the ionized oxygen travels through the electrolyte and is converted to oxygen gas at the oxygen electrode.

  20. A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

    NASA Technical Reports Server (NTRS)

    Bruston, J.; Maestrini, A.; Pukala, D.; Martin, S.; Nakamura, B.; Mehdi, I.

    2001-01-01

    Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

  1. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    PubMed

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  2. Preparing Silica Aerogel Monoliths via a Rapid Supercritical Extraction Method

    PubMed Central

    Gorka, Caroline A.

    2014-01-01

    A procedure for the fabrication of monolithic silica aerogels in eight hours or less via a rapid supercritical extraction process is described. The procedure requires 15-20 min of preparation time, during which a liquid precursor mixture is prepared and poured into wells of a metal mold that is placed between the platens of a hydraulic hot press, followed by several hours of processing within the hot press. The precursor solution consists of a 1.0:12.0:3.6:3.5 x 10-3 molar ratio of tetramethylorthosilicate (TMOS):methanol:water:ammonia. In each well of the mold, a porous silica sol-gel matrix forms. As the temperature of the mold and its contents is increased, the pressure within the mold rises. After the temperature/pressure conditions surpass the supercritical point for the solvent within the pores of the matrix (in this case, a methanol/water mixture), the supercritical fluid is released, and monolithic aerogel remains within the wells of the mold. With the mold used in this procedure, cylindrical monoliths of 2.2 cm diameter and 1.9 cm height are produced. Aerogels formed by this rapid method have comparable properties (low bulk and skeletal density, high surface area, mesoporous morphology) to those prepared by other methods that involve either additional reaction steps or solvent extractions (lengthier processes that generate more chemical waste).The rapid supercritical extraction method can also be applied to the fabrication of aerogels based on other precursor recipes. PMID:24637334

  3. Three-Dimensional Bicontinuous Graphene Monolith from Polymer Templates.

    PubMed

    Liu, Kewei; Chen, Yu-Ming; Policastro, Gina M; Becker, Matthew L; Zhu, Yu

    2015-06-23

    The two-dimensional single-layer and few-layered graphene exhibit many attractive properties such as large specific surface area and high charge carrier mobility. However, graphene sheets tend to stack together and form aggregates, which do not possess the desirable properties associated with graphene. Herein, we report a method to fabricate three-dimensional (3D), bicontinuous graphene monolith through a versatile hollow nickel (Ni) template derived from polymer blends. The poly(styrene)/poly(ethylene oxide) were used to fabricate a bicontinuous gyroid template using controlled phase separation. The Ni template was formed by electroless metal depositing on the polymer followed by removing the polymer phase. The resulting hollow Ni structure was highly porous (95.2%). Graphene was then synthesized from this hollow Ni template using chemical vapor deposition and the free-standing bicontinuous graphene monolith was obtained in high-throughput process. Finally, the bicontinuous graphene monolith was used directly as binder-free electrode in supercapacitor applications. The supercapacitor devices exhibited excellent stability.

  4. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  5. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-01

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  6. Preparation of a novel polymer monolith with functional polymer brushes by two-step atom-transfer radical polymerization for trypsin immobilization.

    PubMed

    Li, Nan; Zheng, Wei; Shen, Ying; Qi, Li; Li, Yaping; Qiao, Juan; Wang, Fuyi; Chen, Yi

    2014-12-01

    Novel porous polymer monoliths grafted with poly{oligo[(ethylene glycol) methacrylate]-co-glycidyl methacrylate} brushes were fabricated via two-step atom-transfer radical polymerization and used as a trypsin-based reactor in a continuous flow system. This is the first time that atom-transfer radical polymerization technique was utilized to design and construct polymer monolith bioreactor. The prepared monoliths possessed excellent permeability, providing fast mass transfer for enzymatic reaction. More importantly, surface properties, which were modulated via surface-initiated atom-transfer radical polymerization, were found to have a great effect on bioreactor activities based on Michaelis-Menten studies. Furthermore, three model proteins were digested by the monolith bioreactor to a larger degree within dramatically reduced time (50 s), about 900 times faster than that by free trypsin (12 h). The proposed method provided a platform to prepare porous monoliths with desired surface properties for immobilizing various enzymes.

  7. Performance impact of luminescent coupling on monolithic 12-junction phototransducers for 12 V photonic power systems

    NASA Astrophysics Data System (ADS)

    Wilkins, Matthew; Valdivia, Christopher E.; Chahal, Sanmeet; Ishigaki, Masanori; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

    2016-03-01

    A twelve-junction monolithically-integrated GaAs phototransducer device with >60% power conversion efficiency and >14 V open-circuit voltage under monochromatic illumination is presented. Drift-diffusion based simulations including a luminescent coupled generation term are used to study photon recycling and luminescent coupling between each junction. We find that luminescent coupling effectively redistributes any excess generated photocurrent between all junctions leading to reduced wavelength sensitivity. This broadened response is consistent with experimental measurements of devices with high-quality materials exhibiting long carrier lifetimes. Photon recycling is also found to significantly improve the voltage of all junctions, in contrast to multi-junction solar cells which utilize junctions of differing bandgaps and where high-bandgap junctions benefit less from photon recycling.

  8. Layer-by-Layer Assembly of Metal-Organic Frameworks in Macroporous Polymer Monolith and Their Use for Enzyme Immobilization.

    PubMed

    Wen, Liyin; Gao, Aicong; Cao, Yao; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2016-03-01

    New monolithic materials comprising zeolitic imidazolate framework (ZIF-8) located on the pore surface of poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith previously functionalized with N-(3-aminopropyl)-imidazole have been prepared via a layer-by-layer self-assembly strategy. These new ZIF-8@monolith hybrids are used as solid-phase carriers for enzyme immobilization. Their performance is demonstrated with immobilization of a model proteolytic enzyme trypsin. The best of the conjugates enable very efficient digestion of proteins that can be achieved in mere 43 s. PMID:26806691

  9. Layer-by-Layer Assembly of Metal-Organic Frameworks in Macroporous Polymer Monolith and Their Use for Enzyme Immobilization.

    PubMed

    Wen, Liyin; Gao, Aicong; Cao, Yao; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2016-03-01

    New monolithic materials comprising zeolitic imidazolate framework (ZIF-8) located on the pore surface of poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith previously functionalized with N-(3-aminopropyl)-imidazole have been prepared via a layer-by-layer self-assembly strategy. These new ZIF-8@monolith hybrids are used as solid-phase carriers for enzyme immobilization. Their performance is demonstrated with immobilization of a model proteolytic enzyme trypsin. The best of the conjugates enable very efficient digestion of proteins that can be achieved in mere 43 s.

  10. XeF2 gas-assisted focused-electron-beam-induced etching of GaAs with 30 nm resolution

    NASA Astrophysics Data System (ADS)

    Ganczarczyk, A.; Geller, M.; Lorke, A.

    2011-01-01

    We demonstrate the gas-assisted focused-electron-beam (FEB)-induced etching of GaAs with a resolution of 30 nm at room temperature. We use a scanning electron microscope (SEM) in a dual beam focused ion beam together with xenon difluoride (XeF2) that can be injected by a needle directly onto the sample surface. We show that the FEB-induced etching with XeF2 as a precursor gas results in isotropic and smooth etching of GaAs, while the etch rate depends strongly on the beam current and the electron energy. The natural oxide of GaAs at the sample surface inhibits the etching process; hence, oxide removal in combination with chemical surface passivation is necessary as a strategy to enable this high-resolution etching alternative for GaAs.

  11. Activated carbon monoliths for methane storage

    NASA Astrophysics Data System (ADS)

    Chada, Nagaraju; Romanos, Jimmy; Hilton, Ramsey; Suppes, Galen; Burress, Jacob; Pfeifer, Peter

    2012-02-01

    The use of adsorbent storage media for natural gas (methane) vehicles allows for the use of non-cylindrical tanks due to the decreased pressure at which the natural gas is stored. The use of carbon powder as a storage material allows for a high mass of methane stored for mass of sample, but at the cost of the tank volume. Densified carbon monoliths, however, allow for the mass of methane for volume of tank to be optimized. In this work, different activated carbon monoliths have been produced using a polymeric binder, with various synthesis parameters. The methane storage was studied using a home-built, dosing-type instrument. A monolith with optimal parameters has been fabricated. The gravimetric excess adsorption for the optimized monolith was found to be 161 g methane for kg carbon.

  12. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    DOEpatents

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  13. Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Ikoma, Hideaki

    1993-02-01

    Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on the GaAs surface and the degradation of the GaAs surface exposed to air ambient after the passivation. The reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect. However, it increased as this sample was exposed to air, indicating an increase in the interface state density. The XPS studies showed that both the Ga and As oxides were hardly observed in the sulfur-passivated samples. This indicates that sulfur passivation strongly suppresses oxidation of GaAs. However, a small amount of elemental arsenic was observed with a trace of the As suboxides (such as AsO) after exposure to air and it increased as the exposure time was increased. These results were probably correlated with the increase in the bias dependence of the Schottky barrier height in samples exposed to air after the passivation. Thermal oxidation of GaAs was found to be retarded by sulfur passivation until oxidation time was about 10 min at 300°C. A possible model of suppression of oxidation by sulfur passivation was also discussed.

  14. Preparation of polyhedral oligomeric silsesquioxane-based hybrid monolith by ring-opening polymerization and post-functionalization via thiol-ene click reaction.

    PubMed

    Liu, Zhongshan; Ou, Junjie; Lin, Hui; Wang, Hongwei; Dong, Jing; Zou, Hanfa

    2014-05-16

    A polyhedral oligomeric silsesquioxane (POSS) hybrid monolith was simply prepared by using octaglycidyldimethylsilyl POSS (POSS-epoxy) and cystamine dihydrochloride as monomers via ring-opening polymerization. The effects of composition of prepolymerization solution and polycondensation temperature on the morphology and permeability of monolithic column were investigated in detail. The obtained POSS hybrid monolithic column showed 3D skeleton morphology and exhibited high column efficiency of ∼71,000 plates per meter in reversed-phase mechanism. Owing to this POSS hybrid monolith essentially possessing a great number of disulfide bonds, the monolith surface would expose thiol groups after reduction with dithiothreitol (DTT), which supplied active sites to functionalize with various alkene monomers via thiol-ene click reaction. The results indicated that the reduction with DTT could not destroy the 3D skeleton of hybrid monolith. Both stearyl methylacrylate (SMA) and benzyl methacrylate (BMA) were selected to functionalize the hybrid monolithic columns for reversed-phase liquid chromatography (RPLC), while [2-(methacryloyloxy)ethyl]-dimethyl-(3-sulfopropyl)-ammonium hydroxide (MSA) was used to modify the hybrid monolithic column in hydrophilic interaction chromatography (HILIC). These modified hybrid monolithic columns could be successfully applied for separation of small molecules with high efficiency. It is demonstrated that thiol-ene click reaction supplies a facile way to introduce various functional groups to the hybrid monolith possessing thiol groups. Furthermore, due to good permeability of the resulting hybrid monoliths, we also prepared long hybrid monolithic columns in narrow-bore capillaries. The highest column efficiency reached to ∼70,000 plates using a 1-m-long column of 75μm i.d. with a peak capacity of 147 for isocratic chromatography, indicating potential application in separation and analysis of complex biosamples.

  15. Biomechanical three-dimensional finite element analysis of monolithic zirconia crown with different cement type

    PubMed Central

    2015-01-01

    PURPOSE The objective of this study was to evaluate the influence of various cement types on the stress distribution in monolithic zirconia crowns under maximum bite force using the finite element analysis. MATERIALS AND METHODS The models of the prepared #46 crown (deep chamfer margin) were scanned and solid models composed of the monolithic zirconia crown, cement layer, and prepared tooth were produced using the computer-aided design technology and were subsequently translated into 3-dimensional finite element models. Four models were prepared according to different cement types (zinc phosphate, polycarboxylate, glass ionomer, and resin). A load of 700 N was applied vertically on the crowns (8 loading points). Maximum principal stress was determined. RESULTS Zinc phosphate cement had a greater stress concentration in the cement layer, while polycarboxylate cement had a greater stress concentration on the distal surface of the monolithic zirconia crown and abutment tooth. Resin cement and glass ionomer cement showed similar patterns, but resin cement showed a lower stress distribution on the lingual and mesial surface of the cement layer. CONCLUSION The test results indicate that the use of different luting agents that have various elastic moduli has an impact on the stress distribution of the monolithic zirconia crowns, cement layers, and abutment tooth. Resin cement is recommended for the luting agent of the monolithic zirconia crowns. PMID:26816578

  16. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  17. Probing the Effects of Templating on the UV and Visible Light Photocatalytic Activity of Porous Nitrogen-Modified Titania Monoliths for Dye Removal.

    PubMed

    Nursam, Natalita M; Wang, Xingdong; Tan, Jeannie Z Y; Caruso, Rachel A

    2016-07-13

    Porous nitrogen-modified titania (N-titania) monoliths with tailored morphologies were prepared using phase separation and agarose gel templating techniques. The doping and templating process were simultaneously carried out in a one-pot step using alcohol amine-assisted sol-gel chemistry. The amount of polymer used in the monoliths that were prepared using phase separation was shown to affect both the physical and optical properties: higher poly(ethylene glycol) content increased the specific surface area, porosity, and visible light absorption of the final materials. For the agarose-templated monoliths, the infiltration conditions affected the monolith morphology. A porous monolith with high surface area and the least shrinkage was obtained when the N containing alkoxide precursor was infiltrated into the agarose scaffolds at 60 °C. The effect of the diverse porous morphologies on the photocatalytic activity of N-titania was studied for the decomposition of methylene blue (MB) under visible and UV light irradiation. The highest visible light activity was achieved by the agarose-templated N-titania monolith, in part due to higher N incorporation. This sample also showed better UV activity, partly because of the higher specific surface area (up to 112 m(2) g(-1)) compared to the phase separation-induced monoliths (up to 103 m(2) g(-1)). Overall, agarose-templated, porous N-titania monoliths provided better features for effectively removing the MB contaminant. PMID:27347742

  18. Conduction-type control of Ge films grown on (NH 4) 2S-treated GaAs by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Inada, M.; Fujishima, T.; Umezu, I.; Sugimura, A.; Yamada, S.

    2001-07-01

    We have performed epitaxial growth of Ge films on (NH 4) 2S-treated GaAs (0 0 1) substrates under various growth temperatures using molecular beam epitaxy. We confirmed that this sulfur passivation is quite effective for preventing the oxidation of GaAs surface. Thus, the Ge films were grown epitaxially on GaAs substrate without thermal cleaning. The electric properties of Ge films were investigated using Hall measurement and it was found that the conduction type of Ge films can be controlled by growth temperature. The Ga-S bond is thought to be the key for conduction type control, although the details are not identified yet.

  19. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  20. Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Saini, Subhash (Technical Monitor)

    1998-01-01

    The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

  1. Thermal stress cycling of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    1985-01-01

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  2. Monolithic stationary phases with incorporated fumed silica nanoparticles. Part II. Polymethacrylate-based monolithic column with "covalently" incorporated modified octadecyl fumed silica nanoparticles for reversed-phase chromatography.

    PubMed

    Aydoğan, Cemil; El Rassi, Ziad

    2016-05-01

    This study is concerned with the incorporation of surface modified fumed silica nanoparticles (FSNPs) into polymethacrylate based monolithic columns for use in reversed phase chromatography (RPC) of small solutes and proteins. First, FSNPs were modified with 3-(trimethoxysilyl)propylmethacrylate (TMSPM) to yield the "hybrid" methacryloyl fumed silica nanoparticle (MFSNP) monomer. The resulting MFSNP was then mixed with glyceryl monomethacrylate (GMM) and ethylene dimethacrylate (EDMA) in a binary porogenic solvent composed of cyclohexanol and dodecanol, and the in situ copolymerization of MFSNP, GMM and EDMA was performed in a stainless steel column of 4.6 mm i.d. The silanol groups of the hybrid monolith thus obtained were grafted with octadecyl ligands by perfusing the hybrid monolithic column with a solution of 4% w/v of dimethyloctadecylchlorosilane (DODCS) in toluene while the column was maintained at 110°C for 6h (in a heated HPLC oven). One of the originalities of this study was to demonstrate MFSNP as a novel derivatized "hybrid monomer" in making RPC monolithic columns with surface bound octadecyl ligands. In this respect, the RPC behavior of the monolithic column with "covalently" incorporated FNSPs having surface grafted octadecyl ligands was evaluated with alkylbenzenes, aniline derivatives and phenolic compounds. The results showed that the hybrid poly(GMA-EDMA-MFSNP) having surface bound octadecyl ligands exhibited hydrophobic interactions under reversed phase elution conditions. Furthermore, six standard proteins were baseline separated on the column using a 10min linear gradient elution at increasing ACN concentration in the mobile phase at a flow rate of 1.0mL/min using a 10 cm×4.6mm i.d. column. The relative standard deviations (RSDs) for the retention times of the tested solutes were lower than 2.1% and 2.4% under isocratic elution and gradient elution conditions, respectively. PMID:27059396

  3. Monolithic stationary phases with incorporated fumed silica nanoparticles. Part II. Polymethacrylate-based monolithic column with "covalently" incorporated modified octadecyl fumed silica nanoparticles for reversed-phase chromatography.

    PubMed

    Aydoğan, Cemil; El Rassi, Ziad

    2016-05-01

    This study is concerned with the incorporation of surface modified fumed silica nanoparticles (FSNPs) into polymethacrylate based monolithic columns for use in reversed phase chromatography (RPC) of small solutes and proteins. First, FSNPs were modified with 3-(trimethoxysilyl)propylmethacrylate (TMSPM) to yield the "hybrid" methacryloyl fumed silica nanoparticle (MFSNP) monomer. The resulting MFSNP was then mixed with glyceryl monomethacrylate (GMM) and ethylene dimethacrylate (EDMA) in a binary porogenic solvent composed of cyclohexanol and dodecanol, and the in situ copolymerization of MFSNP, GMM and EDMA was performed in a stainless steel column of 4.6 mm i.d. The silanol groups of the hybrid monolith thus obtained were grafted with octadecyl ligands by perfusing the hybrid monolithic column with a solution of 4% w/v of dimethyloctadecylchlorosilane (DODCS) in toluene while the column was maintained at 110°C for 6h (in a heated HPLC oven). One of the originalities of this study was to demonstrate MFSNP as a novel derivatized "hybrid monomer" in making RPC monolithic columns with surface bound octadecyl ligands. In this respect, the RPC behavior of the monolithic column with "covalently" incorporated FNSPs having surface grafted octadecyl ligands was evaluated with alkylbenzenes, aniline derivatives and phenolic compounds. The results showed that the hybrid poly(GMA-EDMA-MFSNP) having surface bound octadecyl ligands exhibited hydrophobic interactions under reversed phase elution conditions. Furthermore, six standard proteins were baseline separated on the column using a 10min linear gradient elution at increasing ACN concentration in the mobile phase at a flow rate of 1.0mL/min using a 10 cm×4.6mm i.d. column. The relative standard deviations (RSDs) for the retention times of the tested solutes were lower than 2.1% and 2.4% under isocratic elution and gradient elution conditions, respectively.

  4. Remote Sensing with Commutable Monolithic Laser and Detector

    PubMed Central

    2016-01-01

    The ubiquitous trend toward miniaturized sensing systems demands novel concepts for compact and versatile spectroscopic tools. Conventional optical sensing setups include a light source, an analyte interaction region, and a separate external detector. We present a compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same chip. The differentiation between emitter and detector is eliminated, which enables mutual commutation. Proof-of-principle gas measurements with a limit of detection below 400 ppm are demonstrated. This concept enables a crucial miniaturization of sensing devices. PMID:27785455

  5. Development of fibrous monoliths from mullite, alumina, and zirconia powders

    SciTech Connect

    Polzin, B. J.; Cruse, T. A.; Singh, D.; Picciolo, J. J.; Tsaliagos, R. N.; Phelan, P. J.; Goretta, K. C.

    2000-06-29

    Fibrous monoliths (FMs) based on mullite combined with Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3}-stabilized ZrO{sub 2} have been produced. These FMs incorporate duplex cells in which compressive residual stresses were engineered into the surfaces of the cells. The residual stresses should increase average cell strength, which may allow them to achieve mechanical properties comparable to those of Si{sub 3}N{sub 4}/BN FMs. The expected residual stresses have been calculated, and data on sintering and thermal expansion have been gathered. Prototype FMs were produced and their microstructure examined.

  6. IMAGINE project: a low cost, high performance, monolithic passive mm-wave imager front-end

    NASA Astrophysics Data System (ADS)

    Alexander, N.; Frijlink, P.; Hendricks, J.; Limiti, E.; Löffler, S.; Macdonald, C.; Maher, H.; Pettersson, L.; Platt, D.; Rice, P.; Riester, M.; Schulze, D.; Vassilev, V.

    2012-10-01

    The FP7 Research for SME project IMAGINE - a low cost, high performance monolithic passive mm-wave imager front-end is described in this paper. The main innovation areas for the project are: i) the development of a 94 GHz radiometer chipset and matching circuits suitable for monolithic integration. The chipset consists of a W-band low noise amplifier, fabricated using the commercially available OMMIC D007IH GaAs mHEMT process, and a zero bias resonant interband tunneling diode, fabricated using a patented epi-layer structure that is lattice matched to the same D007IH process; ii) the development of a 94 GHz antenna adapted for low cost manufacturing methods with performance suitable for real-time imaging; iii) the development of a low cost liquid crystal polymer PCB build-up technology with performance suitable for the integration and assembly of a 94 GHz radiometer module; iv) the assembly of technology demonstrator modules. The results achieved in these areas are presented.

  7. Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rajesh, Mohan; Nishioka, Masao; Arakawa, Yasuhiko

    2016-10-01

    We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). High-density coalescence-free InAs/Sb:GaAs QDs emitting at 1.3 µm were obtained on a GaAs/Ge/Si wafer. The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. Together, these results are promising for the realization of a QD laser on a Si substrate by MOCVD for silicon photonics application.

  8. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  9. Fracture Strength of Aged Monolithic and Bilayer Zirconia-Based Crowns

    PubMed Central

    Lameira, Deborah Pacheco; Silva, Wilkens Aurélio Buarque e; Silva, Frederico Andrade e; De Souza, Grace M.

    2015-01-01

    The purpose of this study was to evaluate the effect of design and surface finishing on fracture strength of yttria-tetragonal zirconia polycrystal (Y-TZP) crowns in monolithic (1.5 mm thickness) and bilayer (0.8 mm zirconia coping and 0.7 mm porcelain veneer) configuration after artificial aging. Bovine incisors received crown preparation and Y-TZP crowns were manufactured using CAD/CAM technique, according to the following groups (n = 10): Polished monolithic zirconia crowns (PM); Glazed monolithic zirconia crowns (GM); Bi-layer crowns (BL). Crowns were cemented with resin cement, submitted to artificial aging in a chewing simulator (2.5 million cycles/80 N/artificial saliva/37°C), and tested for fracture strength. Two remaining crowns referring to PM and GM groups were submitted to a chemical composition analysis to measure the level of yttrium after aging. One-way ANOVA and Tukey's test (P = .05) indicated that monolithic zirconia crowns presented similar fracture strength (PM = 3476.2 N ± 791.7; GM = 3561.5 N ± 991.6), which was higher than bilayer crowns (2060.4 N ± 810.6). There was no difference in the yttrium content among the three surfaces evaluated in the monolithic crowns. Thus, monolithic zirconia crowns present higher fracture strength than bilayer veneered zirconia after artificial aging and surface finishing does not affect their fracture strength. PMID:26576423

  10. High photon extraction efficiency from GaAs pillar with InAs quantum dots embedded in Niobium

    NASA Astrophysics Data System (ADS)

    Kato, Daimotsu; Idutsu, Yasuhiro; Takada, Makoto; Ito, Saki; Sato, Hiroyasu; Huh, Jae-Hoon; Ida, Sotaro; Sasakura, Hirotaka; Kumano, Hidekazu; Suemune, Ikuo

    2009-08-01

    We studied the novel structure for improving the emission properties of semiconductor light sources both theoretically and experimentally. The proposed structure is a semiconductor pillar buried in a metal except for one end surface of the pillar. Photons are extracted only from the air-exposed surface. The structure consists of the GaAs nanopillar structures embedded in metal and is analyzed by the finite-difference-time-domain method. InAs quantum dots buried in a GaAs pillar are assumed to be the photon emitters. Simulations are performed on GaAs pillars with different diameters buried in Niobium. Consequently, the simulation showed 75% light extraction efficiency from the pillar to air with the optimization of the structure. In addition, we experimentally measured photoluminescence intensities of up to 40 times enhancement in embedded structures compared to normal pillar structure. These are promising for future applications to overcome single photon sources.

  11. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  12. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    SciTech Connect

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  13. A monolithic lipase reactor for biodiesel production by transesterification of triacylglycerides into fatty acid methyl esters

    PubMed Central

    Urban, Jiri; Svec, Frantisek; Fréchet, Jean M.J.

    2011-01-01

    An enzymatic reactor with lipase immobilized on a monolithic polymer support has been prepared and used to catalyze the transesterification of triacylglycerides into the fatty acid methyl esters commonly used for biodiesel. A design of experiments procedure was used to optimize the monolithic reactor with variables including control of the surface polarity of the monolith via variations in the length of the hydrocarbon chain in alkyl methacrylate monomer, time of grafting of 1-vinyl-4,4-dimethylazlactone used to activate the monolith, and time used for the immobilization of porcine lipase. Optimal conditions involved the use of a poly(stearyl methacrylate-co-ethylene dimethacrylate) monolith, grafted first with vinylazlactone, then treated with lipase for 2 h to carry out the immobilization of the enzyme. Best conditions for the transesterification of glyceryl tributyrate included a temperature of 37°C and a 10 min residence time of the substrate in the bioreactor. The reactor did not lose its activity even after pumping through it a solution of substrate equaling 1,000 reactor volumes. This enzymatic reactor was also used for the transesterification of triacylglycerides from soybean oil to fatty acid methyl esters thus demonstrating the ability of the reactor to produce biodiesel. PMID:21915852

  14. A monolithic lipase reactor for biodiesel production by transesterification of triacylglycerides into fatty acid methyl esters.

    PubMed

    Urban, Jiri; Svec, Frantisek; Fréchet, Jean M J

    2012-02-01

    An enzymatic reactor with lipase immobilized on a monolithic polymer support has been prepared and used to catalyze the transesterification of triacylglycerides into the fatty acid methyl esters commonly used for biodiesel. A design of experiments procedure was used to optimize the monolithic reactor with variables including control of the surface polarity of the monolith via variations in the length of the hydrocarbon chain in alkyl methacrylate monomer, time of grafting of 1-vinyl-4,4-dimethylazlactone used to activate the monolith, and time used for the immobilization of porcine lipase. Optimal conditions involved the use of a poly(stearyl methacrylate-co-ethylene dimethacrylate) monolith, grafted first with vinylazlactone, then treated with lipase for 2 h to carry out the immobilization of the enzyme. Best conditions for the transesterification of glyceryl tributyrate included a temperature of 37°C and a 10 min residence time of the substrate in the bioreactor. The reactor did not lose its activity even after pumping through it a solution of substrate equaling 1,000 reactor volumes. This enzymatic reactor was also used for the transesterification of triacylglycerides from soybean oil to fatty acid methyl esters thus demonstrating the ability of the reactor to produce biodiesel.

  15. Facile synthesis of gradient mesoporous carbon monolith based on polymerization-induced phase separation

    NASA Astrophysics Data System (ADS)

    Xu, Shunjian; Luo, Yufeng; Zhong, Wei; Xiao, Zonghu; Luo, Yongping; Ou, Hui; Zhao, Xing-Zhong

    2014-06-01

    In this paper, a gradient mesoporous carbon (GMC) monolith derived from the mixtures of phenolic resin (PF) and ethylene glycol (EG) was prepared by a facile route based on polymerization-induced phase separation under temperature gradient (TG). A graded biphasic structure of PF-rich and EG-rich phases was first formed in preform under a TG, and then the preform was pyrolyzed to obtain the GMC monolith. The TG is mainly induced by the thermal resistance of the preferential phase separation layer at high temperature region. The pore structure of the monolith changes gradually along the TG direction. When the TG varies from 58°C to 29°C, the pore size, apparent porosity and specific surface area of the monolith range respectively from 18 nm to 83 nm, from 32% to 39% and from 140.5 m2/g to 515.3 m2/g. The gradient porous structure of the monolith is inherited from that of the preform, which depends on phase separation under TG in the resin mixtures. The pyrolysis mainly brings about the contraction of the pore size and wall thickness as well as the transformation of polymerized PF into glassy carbon.

  16. Catalytic role of gold nanoparticle in GaAs nanowire growth: a density functional theory study.

    PubMed

    Kratzer, Peter; Sakong, Sung; Pankoke, Volker

    2012-02-01

    The energetics of Ga, As, and GaAs species on the Au(111) surface (employed as a model for Au nanoparticles) is investigated by means of density functional calculations. Apart from formation of the compound Au(7)Ga(2), Ga is found to form a surface alloy with gold with comparable ΔH ~ -0.5 eV for both processes. Dissociative adsorption of As(2) is found to be exothermic by more than 2 eV on both clean Au(111) and AuGa surface alloys. The As-Ga species formed by reaction of As with the surface alloy is sufficiently stable to cover the surface of an Au particle in vacuo in contact with a GaAs substrate. The results of the calculations are interpreted in the context of Au-catalyzed growth of GaAs nanowires. We argue that arsenic is supplied to the growth zone of the nanowire mainly by impingement of molecules on the gold particle and identify a regime of temperatures and As(2) partial pressures suitable for Au-catalyzed nanowire growth in molecular beam epitaxy.

  17. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    NASA Technical Reports Server (NTRS)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  18. Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators

    NASA Astrophysics Data System (ADS)

    Tournet, J.; Gosselink, D.; Jaikissoon, M.; Miao, G.-X.; Langenberg, D.; Mariantoni, M.; Wasilewski, Zr

    Thin Al layers on dielectrics are essential building blocks of circuits used in the quest for scalable quantum computing systems. While molecular beam epitaxy (MBE) has been shown to produce the highest quality Al layers, further reduction of losses in superconducting resonators fabricated from them is highly desirable. Defects at the Al-substrate interface are likely the key source of losses. Here we report on the optimization of MBE growth of Al layers on GaAs and Si substrates. Si surfaces were prepared by in-situ high temperature substrate annealing. For GaAs, defects typically remaining on the substrate surfaces after oxide desorption were overgrown with GaAs or GaAs/AlAs superlattice buffer layers. Such surface preparation steps were followed by cooling process to below 0°C, precisely controlled to obtain targeted surface reconstructions. Deposition of 110 nm Al layers was done at subzero temperatures and monitored with RHEED at several azimuths simultaneously. The resulting layers were characterized by HRXRD, AFM and Nomarski. Single crystal, near-atomically smooth layers of Al(110) were demonstrated on GaAs(001)-2x4 surface whereas Al(111) of comparable quality was formed on Si(111)-1x1 and 7x7 surfaces.

  19. Preparation and evaluation of rigid porous polyacrylamide-based strong cation-exchange monolithic columns for capillary electrochromatography.

    PubMed

    Dong, Jing; Ou, Junjie; Dong, Xiaoli; Wu, Renan; Ye, Mingliang; Zou, Hanfa

    2007-11-01

    A CEC monolithic column with strong cation-exchange (SCX) stationary phase based on hydrophilic monomers was prepared by in situ polymerization of acrylamide, methylenebisacrylamide, and 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS) in a complete organic binary porogenic solvent consisting of DMSO and dodecanol. The sulfonic groups provided by the monomer AMPS on the surface of the stationary phase generate an EOF from anode to cathode, and serve as an SCX stationary phase at the same time. The monolithic stationary phase exhibited normal-phase chromatographic behavior for neutral analytes. For charged analytes, electrostatic interaction/repulsion with the monolith was observed. The strong SCX monolithic column has been successfully employed in the electrochromatographic separation of basic drugs, peptides, and alkaloids extracted from natural products.

  20. Preparation and evaluation of rigid porous polyacrylamide-based strong cation-exchange monolithic columns for capillary electrochromatography.

    PubMed

    Dong, Jing; Ou, Junjie; Dong, Xiaoli; Wu, Renan; Ye, Mingliang; Zou, Hanfa

    2007-11-01

    A CEC monolithic column with strong cation-exchange (SCX) stationary phase based on hydrophilic monomers was prepared by in situ polymerization of acrylamide, methylenebisacrylamide, and 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS) in a complete organic binary porogenic solvent consisting of DMSO and dodecanol. The sulfonic groups provided by the monomer AMPS on the surface of the stationary phase generate an EOF from anode to cathode, and serve as an SCX stationary phase at the same time. The monolithic stationary phase exhibited normal-phase chromatographic behavior for neutral analytes. For charged analytes, electrostatic interaction/repulsion with the monolith was observed. The strong SCX monolithic column has been successfully employed in the electrochromatographic separation of basic drugs, peptides, and alkaloids extracted from natural products. PMID:17924588

  1. Biocompatible chiral monolithic stationary phase synthesized via atom transfer radical polymerization for high performance liquid chromatographic analysis.

    PubMed

    Wang, Huai-Song; Feng, Xia-Yi; Wei, Ji-Ping

    2015-08-28

    Novel biocompatible chiral monolithic stationary phase was prepared by reverse and direct atom transfer radical polymerization (ATRP) methods. By taking advantages of the controlled/living property of ATRP method, the chiral monolith was prepared by reverse ATRP (RATRP) firstly. An attractive feature of RATRP is the prepared polymer containing a terminal radically transferable atom that can initiate another post-polymerization reaction by direct ATRP. Then, the biocompatible poly(hydroxyethyl methacrylate) (PHEMA) was grafted on the surface of the chiral monolith by direct ATRP as a diffusion barrier for proteins. This biocompatible chiral monolith was successfully used as restricted access stationary phase for determination of enantiomers in biological samples with direct injection by high-performance liquid chromatography (HPLC). PMID:26199103

  2. Thick silica gel coatings on methylsilsesquioxane monoliths using anisotropic phase separation.

    PubMed

    Kanamori, Kazuyoshi; Nakanishi, Kazuki; Hanada, Teiichi

    2006-11-01

    Silica gel coatings on methyltrimethoxysilane (MTMS)-derived monoliths have been studied using wetting transition. Wetting transition is observed in a small confined space, where a coating solution phase-separates into a well-coarsened dimension, making all the phase-separating polymerizing silica phase dynamically flow onto the existing surface of a mold. Bulk coating experiments have shown reductions of both macropore volume and diameter due to the coated layer. Comparing HPLC efficiencies of the coated monolith with those of the non-coated MTMS monolith revealed that the retention factors drastically increased in both normal- and reversed-phase modes. This is attributed to the existence of considerable amounts of accessible micropores left inside the coated layer, where analyte molecules travel and adsorb for a considerable period of time.

  3. Macroporous polyacrylamide-based monolithic column with immobilized pH gradient for protein analysis.

    PubMed

    Zhu, Guijie; Yuan, Huiming; Zhao, Peng; Zhang, Lihua; Liang, Zhen; Zhang, Weibing; Zhang, Yukui

    2006-09-01

    Monolithic materials were prepared in capillaries by in situ polymerization of acrylamide, glycidyl methacrylate, and N,N'-methylenebisacrylamide in the presence of 1,4-butanediol, dodecanol, and DMSO as porogens. With Ampholine attached to the surface of the porous monolith via epoxide groups, a monolithic-IPG (M-IPG) was formed and showed good mechanical and chemical stability. With such a column immobilized by Ampholine 3.5-10, IEF-MIX 3.6-9.3 was separated and good linearity was obtained. The CIEF behavior of M-IPG was evinced by comparing the current with that in the open tubular capillary. In addition, the protein mixtures excreted from lung cancer cells of rats were analyzed with such a new M-IPG column.

  4. Miniaturized monolithic columns for the electrochromatographic separation and SERS detection of molecules of exobiological interest

    NASA Astrophysics Data System (ADS)

    Carbonnier, Benjamin; Guerrouache, Mohamed

    Development of miniaturized separation and detection media represents one of the major challenges in the field of modern analytical chemistry dedicated to space exploration. To date, gas chromatography-mass spectrometry has been selected as the method of choice for exobiology flight experiments for seeking for organic molecules and especially potential chemical indicators of life. [1] Liquid phase separation methods have also been developed with for instance, the so-called Mars Organic Analyzer (MOA) capillary electrophoresis (CE) microchip.[2] Although CE offers the advantages of easy miniaturization and high separation efficiency it suffers from a lack of selectivity towards a broad range of analytes with varied chemical nature. In this respect, we propose the use of capillary columns filled with monolithic stationary phases for the electrochromatographic separation of organic molecules of exobiology interest. Polymer monoliths have attracted a great deal of interest in analytical science over the last years as (electro)chromatographic stationary phases [3], immunosensors [4]. Beyond the intrinsic properties of monolithic polymers, i.e. fast mass transport between the monolithic support and the surrounding fluid and high permeability, other major advantages are their easy in situ preparation and tuning of surface functionality. Indeed, monoliths can be simply prepared through free radical copolymerization of a homogeneous mixture made of monomers, cross-linkers, porogenic solvents and initiator. UV-initiation process has been exploited to the synthesis of a discrete section of monolith as a flow-through active element within the confines of micro channels [5,6] while two-step strategies have been reported for the design of varied adsorbent starting with a generic monolith [7,8]. Although a nearly limitless range of monolithic supports can be prepared by this traditional method, the resulting monoliths exhibit unique function. In this contribution, we describe an

  5. Macroporous polyacrylamide-based monolithic column with immobilized pH gradient for protein analysis.

    PubMed

    Zhu, Guijie; Yuan, Huiming; Zhao, Peng; Zhang, Lihua; Liang, Zhen; Zhang, Weibing; Zhang, Yukui

    2006-09-01

    Monolithic materials were prepared in capillaries by in situ polymerization of acrylamide, glycidyl methacrylate, and N,N'-methylenebisacrylamide in the presence of 1,4-butanediol, dodecanol, and DMSO as porogens. With Ampholine attached to the surface of the porous monolith via epoxide groups, a monolithic-IPG (M-IPG) was formed and showed good mechanical and chemical stability. With such a column immobilized by Ampholine 3.5-10, IEF-MIX 3.6-9.3 was separated and good linearity was obtained. The CIEF behavior of M-IPG was evinced by comparing the current with that in the open tubular capillary. In addition, the protein mixtures excreted from lung cancer cells of rats were analyzed with such a new M-IPG column. PMID:16915568

  6. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  7. Taking a Large Monolith to Use for Teaching Soil Morphology.

    ERIC Educational Resources Information Center

    Smith, B. R.; And Others

    1989-01-01

    Described is a technique for taking a large monolith for the purpose of teaching soil structure. Materials and procedures are detailed. A survey of 93 students indicated that the larger monolith was preferred over the commonly used narrow ones. (CW)

  8. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  9. Designing Catalytic Monoliths For Closed-Cycle CO2 Lasers

    NASA Technical Reports Server (NTRS)

    Guinn, Keith; Herz, Richard K.; Goldblum, Seth; Noskowski, ED

    1992-01-01

    LASCAT (Design of Catalytic Monoliths for Closed-Cycle Carbon Dioxide Lasers) computer program aids in design of catalyst in monolith by simulating effects of design decisions on performance of laser. Provides opportunity for designer to explore tradeoffs among activity and dimensions of catalyst, dimensions of monolith, pressure drop caused by flow of gas through monolith, conversion of oxygen, and other variables. Written in FORTRAN 77.

  10. Consolidation and densification methods for fibrous monolith processing

    SciTech Connect

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2006-06-20

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  11. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    This is the second quarterly technical report on a program, the goal of which is to achieve high efficiency GaAs solar cells. Analysis was concerned with providing design information for use in experimentally determining optimum solar cell process parameters. The first quarterly report contained the results of those design calculations. Using those results as a guide, experimental work was initiated to determine optimum cell process parameters. The initial results on this phase of the program are reported.

  12. Piezoelectric field in strained GaAs.

    SciTech Connect

    Chow, Weng Wah; Wieczorek, Sebastian Maciej

    2005-11-01

    This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.

  13. Development of a monolithic ferrite memory array

    NASA Technical Reports Server (NTRS)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  14. A 30 GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Mondal, J.; Contolatis, T.; Geddes, J.; Bauhahn, P.; Sokolov, V.

    1990-01-01

    The technical achievements and deliveries made during the duration of the program to develop a 30 GHz monolithic receive module for communication feed array applications and to deliver submodules and 30 GHz monolithic receive modules for experimental evaluation are discussed. Key requirements include an overall receive module noise figure of 5 dB, a 30 dB RF-to-RF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. In addition, the monolithic receive module design addresses a cost goal of less than one thousand dollars (1980 dollars) per module in unit buys of 5,000 or more, and a mechanical configuration that is applicable to a spaceborne phase array system. An additional task for the development and delivery of 32 GHz phase shifter integrated circuit (IC) for deep space communication is also described.

  15. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  16. The binding energies of a bulged GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Zamani, A.; Estabar, Th.; Safarpour, Gh.; Moradi, M.

    2014-12-01

    As it is well-known the electronic structure of the semiconductor nanostructures are so sensitive to alteration of confinement while the nanostructure morphology often determines the confinement. Accordingly existence of a bulge on the wire surface will affect the features of the nanowire. In the present work we consider an on-center hydrogenic donor impurity in a GaAs nanowire with bulge. The ground and first excited states energy levels as well as their binding energies are calculated as functions of bulge and nanowire radius. It is found that both the energy levels and binding energies are strongly influenced by the bulge size for ultrafine nanowires. For large wire radii the effects of bulge existence is trivial and the electronic properties of the system approach to those of the simple nanowire.

  17. Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

    SciTech Connect

    Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian; Young, David L.; Ptak, Aaron J.; Packard, Corinne E.

    2015-06-14

    Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many microns of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.

  18. AFM Observation of Self-Assembled Monolayer Films on GaAs (110)

    NASA Astrophysics Data System (ADS)

    Ohno, Hirotaka; Motomatsu, Makoto; Mizutani, Wataru; Tokumoto, Hiroshi

    1995-02-01

    We have confirmed that a self-assembled monolayer (SAM) film of octadecanethiol (ODT), CH3(CH2)17SH, can be formed on a cleaved GaAs (110) surface, by using an atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). Circular depressions were observed on the surface after film formation. The area of the circular depressions increased with immersion time, indicating that the solution oxidized the interface between ODT molecules and the GaAs surface, resulting in removal of ODT molecules. The oxidation was considerably faster in pure ethanol solution than that in ODT solution, demonstrating that the SAM film protects the GaAs surface from oxidation. High-resolution lateral force microscope (LFM) images revealed a periodic structure that had two types of lines: periodic lines 0.57 nm apart and lines rotated 55° with respect to them. A structural model of the SAM successfully explained both the features in high-resolution LFM images and the depression depth observed in AFM images.

  19. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  20. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  1. Supercapacitor Electrodes from Activated Carbon Monoliths and Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Dolah, B. N. M.; Othman, M. A. R.; Deraman, M.; Basri, N. H.; Farma, R.; Talib, I. A.; Ishak, M. M.

    2013-04-01

    Binderless monoliths of supercapacitor electrodes were prepared by the carbonization (N2) and activation (CO2) of green monoliths (GMs). GMs were made from mixtures of self-adhesive carbon grains (SACG) of fibers from oil palm empty fruit bunches and a combination of 5 & 6% KOH and 0, 5 & 6% carbon nanotubes (CNTs) by weight. The electrodes from GMs containing CNTs were found to have lower specific BET surface area (SBET). The electrochemical behavior of the supercapacitor fabricated using the prepared electrodes were investigated by electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge (GCD). In general an addition of CNTs into the GMs reduces the equivalent series resistance (ESR) value of the cells. A cell fabricated using electrodes from GM with 5% CNT and 5% KOH was found to have the largest reduction of ESR value than that from the others GMs containing CNT. The cell has steeper Warburg's slope than that from its respective non-CNT GM, which reflect the smaller resistance for electrolyte ions to move into pores of electrodes despite these electrodes having largest reduction in specific BET surface area. The cell also has the smallest reduction of specific capacitance (Csp) and maintains the specific power range despite a reduction in the specific energy range due to the CNT addition.

  2. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  3. Macroporous silver monoliths using a simple surfactant

    NASA Astrophysics Data System (ADS)

    Khan, Farid; Eswaramoorthy, Muthusamy; Rao, C. N. R.

    2007-01-01

    An elegant method to synthesize porous silver monoliths using a simple surfactant cum reductant, Triton X-114, as the sacrificial template is described. The gel forming property of the surfactant with silver nitrate is utilized to make the porous framework. The monoliths obtained with a mixture of Triton X-114 and dextran have also been examined. A significant improvement in the pore structure was observed when Triton X-114 was used along with Ludox silica sol, followed by calcination and HF treatment. The presence of interparticle pores in the 20-25 nm range on the macroporous silver framework suggests the role of silica spheres in the nanopore formation.

  4. UPDATE ON MONOLITHIC FUEL FABRICATION METHODS

    SciTech Connect

    C. R. Clark; J. F. Jue; G. A. Moore; N. P. Hallinan; B. H. Park; D. E. Burkes

    2006-10-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Progress at INL has led to fabrication of hot isostatic pressed uranium-molybdenum bearing monolithic fuel plates. These miniplates are part of the RERTR-8 miniplate irradiation test. Further progress has also been made on friction stir weld processing which has been used to fabricate full size fuel plates which will be irradiated in the ATR and OSIRIS reactors.

  5. Increased thermal conductivity monolithic zeolite structures

    DOEpatents

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  6. Preparation of a thermoresponsive polymer grafted polystyrene monolithic capillary for the separation of bioactive compounds.

    PubMed

    Koriyama, Takuya; Asoh, Taka-Aki; Kikuchi, Akihiko

    2016-11-01

    To develop aqueous microseparation columns for bioactive compounds, a thermoresponsive polymer grafted polymer monolith was prepared inside silica capillaries having an I.D. of 100μm by polymerization of styrene (St) with m/p-divinylbenzene (DVB) in the presence of polydimethylsiloxane as porogen, followed by surface-initiated atom transfer radical polymerization (SI-ATRP) of N-isopropylacrylamide (NIPAAm). SEM analysis indicated that the resulting poly(N-isopropylacrylamide) (PNIPAAm) grafted polystyrene monolith had a consecutive three-dimensionally interconnected structure and through-pores, similar to the base polystyrene (PSt) monolith. The elution behavior of steroids with different hydrophobicity was evaluated using micro-high-performance liquid chromatography in sole aqueous mobile phase. Temperature dependent interaction changes were observed between steroids and the PNIPAAm modified surfaces. Furthermore, the interaction between bioactive compounds and the PNIPAAm grafted PSt surfaces was controlled and eventually separate these molecules with different hydrophobicities by simple temperature modulation in aqueous environment. The PNIPAAm grafted PSt monolithic capillary showed improved separation properties of bioactive compounds, compared with a PNIPAAm grafted hollow capillary in aqueous environment. PMID:27559999

  7. Preparation of a thermoresponsive polymer grafted polystyrene monolithic capillary for the separation of bioactive compounds.

    PubMed

    Koriyama, Takuya; Asoh, Taka-Aki; Kikuchi, Akihiko

    2016-11-01

    To develop aqueous microseparation columns for bioactive compounds, a thermoresponsive polymer grafted polymer monolith was prepared inside silica capillaries having an I.D. of 100μm by polymerization of styrene (St) with m/p-divinylbenzene (DVB) in the presence of polydimethylsiloxane as porogen, followed by surface-initiated atom transfer radical polymerization (SI-ATRP) of N-isopropylacrylamide (NIPAAm). SEM analysis indicated that the resulting poly(N-isopropylacrylamide) (PNIPAAm) grafted polystyrene monolith had a consecutive three-dimensionally interconnected structure and through-pores, similar to the base polystyrene (PSt) monolith. The elution behavior of steroids with different hydrophobicity was evaluated using micro-high-performance liquid chromatography in sole aqueous mobile phase. Temperature dependent interaction changes were observed between steroids and the PNIPAAm modified surfaces. Furthermore, the interaction between bioactive compounds and the PNIPAAm grafted PSt surfaces was controlled and eventually separate these molecules with different hydrophobicities by simple temperature modulation in aqueous environment. The PNIPAAm grafted PSt monolithic capillary showed improved separation properties of bioactive compounds, compared with a PNIPAAm grafted hollow capillary in aqueous environment.

  8. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Jiang, Huaxing; Lau, Kei May

    2016-11-01

    We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain-free GaAs was uncovered in the crystals with a dimension of 3×3 μm2.

  9. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

    SciTech Connect

    Blansett, Ethan L.; Geib, Kent Martin; Cich, Michael Joseph; Wrobel, Theodore Frank; Peake, Gregory Merwin; Fleming, Robert M.; Serkland, Darwin Keith; Wrobel, Diana L.

    2008-01-01

    A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

  10. Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

    PubMed Central

    2016-01-01

    Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45–50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV. PMID:26998550

  11. Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In-doped substrates

    NASA Astrophysics Data System (ADS)

    Imai, Tetsuji; Fuke, Shunro; Mori, Katsumi; Kuwahara, Kazuhiro

    1989-02-01

    Undoped and Zn-doped (˜3×1020/cm3) GaAs epilayers are grown on In-doped (order of 1020/cm3) GaAs substrates by the organometallic vapor phase epitaxy method. By thermal annealing of the undoped epilayer, changes in the perpendicular lattice constant a⊥, together with the apparent changes in surface morphology such as the appearance of a cross-hatched structure or a narrowing of the cross-hatched line spacing, are observed. It is also found that Zn doping is very effective to obtain thick, coherently grown epilayers on In-doped GaAs substrates. No appreciable changes in a⊥ and no generation of misfit dislocations are found because of the hardening of the crystalline lattice, similar to the case of In doping to GaAs bulk crystals.

  12. Silver as Seed-Particle Material for GaAs Nanowires--Dictating Crystal Phase and Growth Direction by Substrate Orientation.

    PubMed

    Lindberg, Caroline; Whiticar, Alexander; Dick, Kimberly A; Sköld, Niklas; Nygård, Jesper; Bolinsson, Jessica

    2016-04-13

    Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45-50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV.

  13. Silver as Seed-Particle Material for GaAs Nanowires--Dictating Crystal Phase and Growth Direction by Substrate Orientation.

    PubMed

    Lindberg, Caroline; Whiticar, Alexander; Dick, Kimberly A; Sköld, Niklas; Nygård, Jesper; Bolinsson, Jessica

    2016-04-13

    Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45-50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV. PMID:26998550

  14. Fiber-based monolithic columns for liquid chromatography.

    PubMed

    Ladisch, Michael; Zhang, Leyu

    2016-10-01

    Fiber-based monoliths for use in liquid chromatographic separations are defined by columns packed with aligned fibers, woven matrices, or contiguous fiber structures capable of achieving rapid separations of proteins, macromolecules, and low molecular weight components. A common denominator and motivating driver for this approach, first initiated 25 years ago, was reducing the cost of bioseparations in a manner that also reduced residence time of retained components while achieving a high ratio of mass to momentum transfer. This type of medium, when packed into a liquid chromatography column, minimized the fraction of stagnant liquid and resulted in a constant plate height for non-adsorbing species. The uncoupling of dispersion from eluent flow rate enabled the surface chemistry of the stationary phase to be considered separately from fluid transport phenomena and pointed to new ways to apply chemistry for the engineering of rapid bioseparations. This paper addresses developments and current research on fiber-based monoliths and explains how the various forms of this type of chromatographic stationary phase have potential to provide new tools for analytical and preparative scale separations. The different stationary phases are discussed, and a model that captures the observed constant plate height as a function of mobile phase velocity is reviewed. Methods that enable hydrodynamically stable fiber columns to be packed and operated over a range of mobile phase flow rates, together with the development of new fiber chemistries, are shown to provide columns that extend the versatility of liquid chromatography using monoliths, particularly at the preparative scale. Graphical Abstract Schematic representation of a sample mixture being separated by a rolled-stationary phase column, resulting separated peaks shown in the chromatogram. PMID:27553948

  15. Approximation of HRPITS results for SI GaAs by large scale support vector machine algorithms

    NASA Astrophysics Data System (ADS)

    Jankowski, Stanisław; Wojdan, Konrad; Szymański, Zbigniew; Kozłowski, Roman

    2006-10-01

    For the first time large-scale support vector machine algorithms are used to extraction defect parameters in semi-insulating (SI) GaAs from high resolution photoinduced transient spectroscopy experiment. By smart decomposition of the data set the SVNTorch algorithm enabled to obtain good approximation of analyzed correlation surface by a parsimonious model (with small number of support vector). The extracted parameters of deep level defect centers from SVM approximation are of good quality as compared to the reference data.

  16. Preparation of an aptamer based organic-inorganic hybrid monolithic column with gold nanoparticles as an intermediary for the enrichment of proteins.

    PubMed

    Zhao, Jin-Cheng; Zhu, Qing-Yun; Zhao, Ling-Yu; Lian, Hong-Zhen; Chen, Hong-Yuan

    2016-08-01

    A novel strategy for the preparation of an aptamer based organic-inorganic hybrid affinity monolithic column was developed successfully using gold nanoparticles (GNPs) as an intermediary for a sandwich structure to realize the functional modification of the surface of the monolithic matrix. This monolithic matrix was facilely pre-synthesized via one-step co-condensation. Due to the high surface-to-volume ratio of GNPs and the large specific surface area of the hybrid matrix, the average coverage density of aptamers on the hybrid monolith reached 342 pmol μL(-1). With the combination of an aptamer based hybrid affinity monolithic column and enzymatic chromogenic assay, the quantitation and detection limits of thrombin were as low as 5 nM and 2 nM, respectively. These results indicated that the GNPs attached monolith provided a novel technique to immobilize aptamers on an organic-inorganic hybrid monolith and it could be used to achieve highly selective recognition and determination of trace proteins. PMID:27307035

  17. Formation of oxides and their role in the growth of Ag nanoplates on GaAs substrates.

    SciTech Connect

    Sun, Y.; Gosztola, D.; Lei, C.; Haasch, R.; Center for Nanoscale Materials; Univ. of Illinois

    2008-10-21

    Simple galvanic reactions between highly doped n-type GaAs wafers and a pure aqueous solution of AgNO3 at room temperature provide an easy and efficient protocol to directly deposit uniform Ag nanoplates with tunable dimensions on the GaAs substrates. The anisotropic growth of the Ag nanoplates in the absence of surfactant molecules might be partially ascribed to the codeposition of oxides of gallium and arsenic, which are revealed by extensive data from electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, during the growth of the Ag nanoplates. The electron microscopic characterization shows that each Ag nanoplate has a 'necked' geometry, that is, it pins on the GaAs lattices through only a tiny neck (with sizes of <10 nm). In addition, the as-grown Ag nanoplates exhibit strong enhancement toward Raman scattering of materials on (or around) their surfaces.

  18. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  19. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  20. A 6-bit 3-Gsps ADC implemented in 1 μm GaAs HBT technology

    NASA Astrophysics Data System (ADS)

    Jincan, Zhang; Yuming, Zhang; Hongliang, Lü; Yimen, Zhang; Guangxing, Xiao; Guiping, Ye

    2014-08-01

    The design and test results of a 6-bit 3-Gsps analog-to-digital converter (ADC) using 1 μm GaAs heterojunction bipolar transistor (HBT) technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier (THA) with a highly linear input buffer to maintain a highly effective number of bits (ENOB). The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.1 GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB, respectively.