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Sample records for gaas photoconductive semiconductor

  1. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  3. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  4. High gain GaAs photoconductive semiconductor switches for ground penetrating radar

    SciTech Connect

    Loubriel, G.M.; Aurand, J.F.; Buttram, M.T.; Zutavern, F.J.; Helgeson, W.D.; O`Malley, M.W.; Brown, D.J.

    1996-07-01

    The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver high peak power, fast risetime pulses when triggered with small laser diode arrays makes them suitable for their use in radars that rely on fast impulses. This type of direct time domain radar is uniquely suited for observation of large structures under ground because it can operate at low frequencies and at high average power. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss their use in a radar transmitter. We will also present a summary of an analysis of the effectiveness of different pulser geometries that result in transmitted pulses with varying frequency content. To this end we developed a simple model that includes transmit and receive antenna response, attenuation and dispersion of the electromagnetic impulses by the soil, and target cross sections.

  5. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes.

    PubMed

    Xu, Ming; Bian, Kangkang; Ma, Cheng; Jia, Hangjuan; An, Xin; Shi, Wei

    2016-09-15

    In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering.

  6. Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch.

    PubMed

    Shi, Wei; Gui, Huaimeng; Zhang, Lin; Ma, Cheng; Li, Mengxia; Xu, Ming; Wang, Luyi

    2013-07-01

    The effects of trigger laser pulse width on the jitter time of a GaAs photoconductive semiconductor switch (PCSS) is investigated in the experiment. The laser is split into two optical beams by a cross grating to excite two 3 mm gap GaAs PCSSs in parallel at the same time. This work reveals that the jitter time of the GaAs PCSS is reduced as the trigger laser pulse width decreases. Our results overcome a significant obstacle that hinders the testing and theory of GaAs PCSSs in high-time-precision synchronous control.

  7. Ground penetrating radar enabled by high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Buttram, M.T.; Aurand, J.F.; Zutavern, F.J.

    1996-06-01

    The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver fast risetime, low jitter pulses when triggered with small laser diode arrays makes them suitable for their use in ultrawide bandwidth (UWB), impulse transmitters. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss how GaAs switches are being implemented in a transmitter for detection of underground structures. The advantage of this type of semiconductor switch is demonstrated operation at high voltages (100 kV) and repetition rates (1 kHz) with the potential for much higher repetition rates. The latter would increase the demonstrated average powers of 100 W to 1 kW and higher. We will also present an analysis of the effectiveness of different pulser geometries that result in transmitted pulses with varying frequency content. To this end, we have developed a simple model that includes transmit and receive antenna response, attenuation and dispersion of the electromagnetic impulses by the soil, and target cross sections.

  8. Investigation of GaAs photoconductive switches triggered by 900nm semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Ma, Deming; Shi, Wei; Ma, Xiangrong; Wang, Xinmei; Pei, Tao

    2008-12-01

    Experiment of a lateral semi-insulating GaAs photoconductive semiconductor switch (SI-GaAs PCSS) with different electrode gaps triggered by 900nm semiconductor laser is reported. With the biased voltage of 0.2KV~3.0KV, the linear electrical pulse is outputted by SI-GaAs PCSS. When laser energy is very low, the semi-insulating GaAs PCSS with 1.5mm electrode gap is triggered by laser pulse, the output electrical pulse samples is instable. When the energy of the laser increases, the amplitude and the width of the electrical pulse also increase. It indicates that a stable electrical pulse is obtained while laser energy is high. With the biased voltage of 2.8kV, the SI-GaAs PCSS with 3mm electrode gap is triggered by laser pulse about 10nJ in 200ns at 900nm. The SI-GaAs PCSS switches a electrical pulse with a voltage up to 80V. The absorption mechanism by Franz-Keldysh effect under high-intensity electric field and EL2 deep level defects is discussed.

  9. Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Wang, Wei; Shen, Yi; Shi, Jinshui; Zhang, Linwen; Xia, Liansheng

    2015-02-01

    Conduction modes of GaAs photoconductive semiconductor switch (PCSS) and their conditions are expounded. Laser diode and high-power picosecond Nd:YAG lasers are used as triggers for nonlinear mode and quasi-linear mode respectively in high-power conduction experiment. GaAs PCSS`s failure mechanisms and factors influencing lifetime in both modes are analyzed. It is found that the power density of laser at trigger time determines in which mode GaAs PCSS operates. Low-power laser triggers a nonlinear mode conduction in which GaAs PCSS`s lifetime is only 103, while high-power laser triggers a quasi-linear mode conduction in which GaAs PCSS`s lifetime is up to 105. According to the findings, the compact high-power pulsed power system based on mass of GaAs PCSSs demands for miniature high-power laser generators.

  10. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.

    2000-03-02

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

  11. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  12. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  13. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  14. Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber

    SciTech Connect

    Shi, Wei; Zhang, Lin; Gui, Huaimeng; Hou, Lei; Xu, Ming; Qu, Guanghui

    2013-04-15

    An improved method is proposed to measure the jitter time of the photoconductive semiconductor switches (PCSSs). A one-to-two fiber is utilized to separate and guide the 1053 nm laser beam to trigger two identical 3-mm-gap GaAs PCSSs synchronously. The jitter time is derived from the time lags of two switches turn-on by the error transfer theory. At a bias voltage of 1 kV, the jitter time is measured as 14.41 ps, which is the lowest jitter of GaAs PCSS that has been reported so far.

  15. Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches.

    PubMed

    Shi, Wei; Gui, Huai-meng; Zhang, Lin; Li, Meng-xia; Ma, Cheng; Wang, Lu-yi; Jiang, Huan

    2013-11-01

    We have experimentally investigated the jitter time of a GaAs photoconductive switch (PCSS) when it is triggered by a laser pulse with 30 ns pulse width and 1064 nm wavelength. It is found that the jitter time decreases as the incident laser pulse energy increases from 0.40 to 1.6 mJ. In addition, a theoretical analysis indicates that the jitter time is proportional to relative deviation of the laser pulse energy. This work provides a path to improve the performance of the PCSS, which is used in applications such as a high time precision synchronous control system and ultrawide-band radiation source.

  16. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory

    NASA Astrophysics Data System (ADS)

    Xiao, Longfei; Hu, Xiaobo; Chen, Xiufang; Peng, Yan; Yang, Xianglong; Xu, Xiangang

    2017-06-01

    GaAs-based 5-mm-gap photoconductive semiconductor switches (PCSSs), with a thickness of 1 mm, are fabricated. A 60° beveling angle is used to make a periodic array of grooves on the surface of GaAs by mechanical processing. The laser beam should be reflected back when a vertical laser is illuminated on these grooves according to total internal reflection (TIR), which leads to an improvement of the light use efficiency (LUE) for the PCSS. The on-state resistance, ranging from 5.17 Ω to 2.14 Ω for the PCSSs, decreases in proportion with an increase of the duty cycle from 0% to 87.8%, where the pulse laser energy is 6.1 mJ at 1064 nm.

  17. Closing Photoconductive Semiconductor Switches

    DTIC Science & Technology

    1989-06-01

    impedance voltage source. Recently, we tested the dependance of the lock-on field on the amount of neutron bombardment of the GaAs. This treatment...for about 30 minutes. Conclusions In this paper have demonstrated a large temperature dependance of the characteristics of GaAs PCSS. The most

  18. High gain GaAs Photoconductive Semiconductor Switches (PCSS): Device lifetime, high current testing, optical pulse generators

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; Helgeson, W.D.; O`Malley, M.W.; Gallegos, R.R.; Hjalmarson, H.P.; Baca, A.G.; Plut, T.A.

    1995-12-31

    This paper presents results from three areas of GaAs PCSS research and development: device lifetime, high current switching, and PCSS-driven laser diode arrays (LDA). The authors have performed device lifetime tests on both lateral and vertical switches as a function of current amplitude, pulse width, and charging time. At present, their longest-lived switch reached 4 {times} 10{sup 6} pulses. Scanning electron microscope (SEM) images show damage near the contacts even after only 5 pulses. They are presently searching for the threshold at which no damage is evident after a single shot. In high current tests, they have reached 5.2 kA at 4.2 kV. This was achieved using twenty fiber-optic coupled lasers to distribute current filaments over a 5 mm wide PCSS. Current waveforms and images of the current filaments as a function of current amplitude will be presented. The lasers used to trigger the high current PCSS were driven with a miniature PCSS. Low inductance, high speed GaAs PCSS are very effective as short pulse laser diode array drivers. Some types of arrays gain switch, producing a compressed optical pulse which is only 75 ps wide. Results from tests with a variety of laser diode arrays will be presented.

  19. Effects of EL2 deep level in GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Liu, Rui; Wang, Jing-li

    2009-07-01

    The semi-insulating (SI) GaAs photoconductive switch is considered to be the higher efficient THz source recently. In order to make good use of the photoconductive switch to generate the more efficient THz wave, SI-GaAs photoconductive switch's working mechanism is discussed from the respect of EL2 deep level in this paper. It has three operation modes. The SI-GaAs material has many kinds of intrinsic-defects. One of the more notable defects is EL2 deep level. The EL2 level can become an impactful electron trap in the linear operation mode; The EL2 level is also the necessary condition of nonlinear (also known as Lock-on) operation mode emerging in III-V semiconductors such as GaAs and InP. At the same time, the compound operation mode is substantial related with the conversion from neutral energy level EL20 to metastable energy level EL2* and singly ionized energy level EL2+ in semiconductor under the light. So in this paper the effects of EL2 deep level are analyzed in photoconductive switch' there operation modes.

  20. Toward pulsed power uses for photoconductive semiconductor switches: Closing switches

    SciTech Connect

    Loubriel, G.M.; O'Malley, M.W.; Zutavern, F.J.

    1987-01-01

    Recent results on Photoconductive Semiconductor Switches (PCSS) are presented. For Si and GaAs switches surface flashover, contact degradation, and current limitations are addressed. For Si samples have been obtained that, without being triggered, withstand fields of up to 85 kV/cm produced by an approx.2-..mu..s wide voltage pulse. The 1-inch diameter, Si samples (''gap length'' of 1.5 cm) have been switched at 36 kV/cm (approx. =54 kV) into an approx.30-..cap omega.. load with a current of 703 A. For GaAs, most samples can withstand, without being triggered, 100 kV/cm. At low electric fields the GaAs samples behave as switches that close during the laser pulse and then open in nanoseconds. At high voltages GaAs does not open. In this mode, called lock-on, up to 42.7 kV/cm (64.1 kV) has been switched. The lock-on mode can be triggered with small laser powers. Plans are being made to use large arrays of GaAs samples to switch 1 MV and 156 kA.

  1. Surface flashover threshold and switched fields of photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; O'Malley, M.W.; Zutavern, F.J.; McKenzie, B.B.; Conley, W.R.

    1988-01-01

    We have shown that Si Photoconductive Semiconductor Switches (PCSS) can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high voltage, high current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. We have also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 Ma/cm/sup 2/ given a penetration depth of about 10/sup /minus/3/ cm. 4 refs., 4 figs., 2 tabs.

  2. Characteristics of current filamentation in high gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F J; Loubriel, G M; O'Malley, M W; Helgeson, W D; McLaughlin, D L; Denison, G J

    1992-01-01

    Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

  3. High Current, Multi-Filament Photoconductive Semiconductor Switching

    DTIC Science & Technology

    2011-06-01

    linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

  4. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  5. Multiple Applications of GaAs semiconductors

    NASA Astrophysics Data System (ADS)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  6. High current density contacts for photoconductive semiconductor switches

    SciTech Connect

    Baca, A.G.; Hjalmarson, H.P.; Loubriel, G.M.; McLaughlin, D.L.; Zutavern, F.J.

    1993-08-01

    The current densities implied by current filaments in GaAs photoconductive semiconductor switches (PCSS) are in excess of 1 MA/cm{sup 2}. As the lateral switches are tested repeatedly, damage accumulates at the contacts until electrical breakdown occurs across the surface of the insulating region. In order to improve the switch lifetime, the incorporation of n- and p-type ohmic contacts in lateral switches as well as surface geometry modifications have been investigated. By using p-type AuBe ohmic contacts at the anode and n-type AuGe ohmic contacts at the cathode, contact lifetime improvements of 5--10x were observed compared to switches with n-type contacts at both anode and cathode. Failure analysis on samples operated for 1--1,000 shots show that extensive damage still exists for at least one contact on all switches observed and that temperatures approaching 500{degrees}C are can be reached. However, the n-type AuGe cathode is often found to have no damage observable by scanning electron microscopy (SEM). The observed patterns of contact degradation indicate directions for future contact improvements in lateral switches.

  7. Room-temperature photoconductivity far below the semiconductor bandgap.

    PubMed

    Huang, Zhiming; Tong, Jinchao; Huang, Jingguo; Zhou, Wei; Wu, Jing; Gao, Yanqing; Lu, Jinxing; Lin, Tie; Wei, Yanfeng; Chu, Junhao

    2014-10-01

    A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable

  9. Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

    NASA Astrophysics Data System (ADS)

    Wu, Minghe; Zheng, Xiaoming; Ruan, Chengli; Yang, Hongchun; Sun, Yunqing; Wang, Shan; Zhang, Kedi; Liu, Hong

    2009-07-01

    The Shockley-Read-Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064 μm laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064 μm. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.

  10. Toward a photoconducting semiconductor RF optical fiber antenna array.

    PubMed

    Davis, R; Rice, R; Ballato, A; Hawkins, T; Foy, P; Ballato, J

    2010-09-20

    Recently, optical fibers comprising a crystalline semiconductor core in a silica cladding have been successfully drawn by a conventional drawing process. These fibers are expected to exhibit a photoconductive response when illuminated by photons more energetic than the band gap of the core. In the photoconducting state, such a fiber can be expected to support driven RF currents so as to function as an antenna element, much as a plasma antenna. In this paper, we report the first device-related results on a crystalline semiconductor core optical fiber potentially useful in a photoconducting optical fiber antenna array; namely, optically induced changes to the electrical conductivity of a glass-clad germanium-core optical fiber. Since DC photoconduction measurements were masked by a photovoltaic effect, RF measurements at 5 MHz were used to determine the magnitude of the induced photoconductive effect. The observed photoconductivity, though not large in the present experiment, was comparable to that measured for the bulk crystals from which the fibers were drawn. The absorbed pumping light generated photo-carriers, thereby transforming the core from a dielectric material to a conductor. This technology could thus enable a class of transient antenna elements useful in low observable and reconfigurable antenna array applications.

  11. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  12. Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Shi, Yulei; Zhou, Qing-li; Zhang, Cunlin

    2010-11-01

    The ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs have been investigated in detail by using terahertz pump-emission technique. Through theoretical modeling based on Hertz vector potential, it is found that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed subsequent to the excitation of pump pulse, and our modeling gives successful analyses for the dynamics of photogenerated carriers in the GaAs. We attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperaturedependent measurements are also performed to verify this model.

  13. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    NASA Astrophysics Data System (ADS)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  14. Photoconductive terahertz generation from textured semiconductor materials

    PubMed Central

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-01-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials. PMID:26979292

  15. Noise and dynamical gain studies of GaAs photoconductive detectors

    NASA Astrophysics Data System (ADS)

    Vilcot, J. P.; Decoster, D.; Raczy, L.; Constant, M.

    1984-03-01

    Noise mesurements on N-type GaAs planar photoconductive detectors have been made over the 10 MHz-1.5 GHz frequency range. The dynamical gains of the devices were calculated from noise data and compared with the values obtained using picosecond measurements. In the gigahertz frequency domain, the photodetectors have an internal current gain as observed in the avalanche photodiodes, but no excess factor has been found.

  16. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

  17. Moving Space Charge Field Effects in Photoconductive Semiconductors and Their Applications.

    NASA Astrophysics Data System (ADS)

    Wang, Chen-Chia

    1995-01-01

    Internal electric space charge fields are formed inside photoconductive semiconductors when they are illuminated by an optical interference pattern. This Thesis focuses on the effects of such space charge fields formed inside semiconductor materials which contain both donors and deep level traps for photo-excited charge carriers. The photon energies are less than the band gap of the photoconductive semiconductor. The space charge field arises from the migration of photo-excited charges from the brighter to darker regions of the optical interference pattern where they become trapped. If the center frequencies of the two mutually coherent optical fields which form the interference pattern are unequal, the interference pattern and consequently the internal space charge field move with identical velocity. The moving space charge field results in a net photocurrent output from the material even when no external electric bias field is present. The short-circuit photocurrents contain a wealth of information about the material characteristics of the photoconductive semiconductor which, once known, can be used to deduce information about the optical frequency spectrum of the optical fields which form the interference pattern. An approximate but very accurate mathematical characterization of the short-circuit photocurrents and their properties are presented. These properties were verified by direct experimental measurements performed in the photoconductive semiconductors InP:Fe, GaAs, GaAs:Cr, CdTe:V, and CdTe:V:Mn. If the two interfering optical fields are plane waves with negligible linewidth, a DC short-circuit photocurrent results whose properties can be used to determine the sign of the pre-dominant species of photo-excited charge carriers, their mobility-lifetime products, and some information about donor and trap concentrations if the mobilities are known. All experiments were performed with laser diode pumped Nd:YAG unidirectional ring oscillator lasers whose optical

  18. Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.

    PubMed

    Tsai, Yutsung; Chu, Zhaodong; Han, Yimo; Chuu, Chih-Piao; Wu, Di; Johnson, Alex; Cheng, Fei; Chou, Mei-Yin; Muller, David A; Li, Xiaoqin; Lai, Keji; Shih, Chih-Kang

    2017-09-11

    Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition-metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multijunctions is critical to achieve carrier confinement. Analogously, successful synthesis of a monolayer WS2 /WS2(1-x) Se2x /WS2 multijunction lateral heterostructure via direct growth by chemical vapor deposition is reported. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine their lateral compositional profile. More importantly, using microwave impedance microscopy, it is demonstrated that the local photoconductivity in the alloy region can be tailored and enhanced by two orders of magnitude over pure WS2 . Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. This work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  20. Deep levels in undoped horizontal Bridgman GaAs by Fourier transform photoconductivity and Hall effect

    NASA Astrophysics Data System (ADS)

    Mitchel, W. C.; Brown, Gail J.; Rea, Laura S.; Smith, S. R.

    1992-01-01

    Deep levels between 0.1 and 1.0 eV in semi-insulating and high resistivity undoped horizontal Bridgman GaAs have been studied by temperature-dependent Hall effect (TDH) and Fourier transform photoconductivity (FTPC). Activation energies at 0.77, 0.426, and 0.15 eV have been observed by TDH. Photoionization thresholds at 1.0, 0.8, 0.56, 0.44, and 0.25 are reported. The photoconductivity thresholds at 0.56 and 0.25 eV are reported for the first time. New features in the 0.44 eV threshold suggest that the defect responsible for this level has a small lattice relaxation and Frank-Condon shift. Possible associations of the FTPC and TDH energies with the deep-level transient spectroscopy levels EL2, EL3, and EL6 are presented.

  1. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOEpatents

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  2. Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S. S.; Mathimalar, S.; Nanal, Vandana; Pillay, R. G.; Döhler, G. H.

    2015-03-01

    We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

  3. Photoconductive semiconductor switches: Laser Q-switch trigger and switch-trigger laser integration

    SciTech Connect

    Loubriel, G.M.; Mar, A.; Hamil, R.A.; Zutavern, F.J.; Helgeson, W.D.

    1997-12-01

    This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/switch integration. The PCSS switches we used were high gain GaAs switches because they can be triggered with small amounts of laser light. The specific goals of the LDRD were to demonstrate: (1) that small laser diode arrays that are potential candidates for laser-switch integration will indeed trigger the PCSS switch, and (2) that high gain GaAs switches can be used to trigger optical Q-switches in lasers such as the lasers to be used in the X-1 Advanced Radiation Source and the laser used for direct optical initiation (DOI) of explosives. The technology developed with this LDRD is now the prime candidate for triggering the Q switch in the multiple lasers in the laser trigger system of the X-1 Advanced Radiation Source and may be utilized in other accelerators. As part of the LDRD we developed a commercial supplier. To study laser/switch integration we tested triggering the high gain GaAs switches with: edge emitting laser diodes, vertical cavity surface emitting lasers (VCSELs), and transverse junction stripe (TJS) lasers. The first two types of lasers (edge emitting and VCSELs) did activate the PCSS but are harder to integrate with the PCSS for a compact package. The US lasers, while easier to integrate with the switch, did not trigger the PCSS at the US laser power levels we used. The PCSS was used to activate the Q-switch of the compact laser to be used in the X-1 Advanced Radiation Source.

  4. Magnetic Counterpart of Persistent Photoconductivity in Narrow-Gap Semiconductors

    NASA Astrophysics Data System (ADS)

    Vasil'ev, Alexander; Voloshok, Tatyana; Warchulska, Jolanta; Kageyama, Hiroshi

    2001-08-01

    At low temperatures, some ionic, covalent and mixed bonding compounds, as well as semiconducting heterostructures and quantum wells exhibit persistent photoconductivity. This term is used to describe the striking phenomenon in which the conductivity of these compounds and/or structures is observed to be greatly enhanced by visible or infrared illumination and the low resistance state is maintained for a long time after switching off the illumination. To describe this effect in variously doped ionic-covalent semiconductors, models of repulsive barriers for both electron emission and capture were introduced based primarily on the assumption of dopants displacement in the host's crystal lattice. Here we report on the magnetic counterpart of this phenomenon, which however does not exactly meet the expectations based on transport measurements. It was found that the magnetic response of AIVBVI narrow-gap semiconductors doped with CIII impurities possesses features of both relaxation phenomena and light-induced phase transition. Exposure of PbTe:Ga, PbTe:In and Pb0.75Sn0.25Te:In single crystals to white-light illumination at low temperatures resulted initially in an increase of the diamagnetic response and then in the appearance of a sharp paramagnetic peak upon heating.

  5. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    SciTech Connect

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O'Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  6. Quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Yan, Jie-Yun

    2017-10-01

    A quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires is developed. The classical plasmon model assumes the excited electron in semiconductors feels a restoring force generated by a harmonic-oscillator potential. Although it is successfully applied to explain the terahertz photoconductivity in semiconductor nanowires, the classical treatment of the potential weakens accurate theoretical analysis. Here I treat the potential in a full quantum way and present an exact analytical formula for photoconductivity. The formula not only gives more reasonable photoconductivity, but also has the same conciseness when compared with that of the classical plasmon model. The validity of the quantum plasmon model is proved independently by numerical calculations in real space.

  7. Quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires.

    PubMed

    Yan, Jie-Yun

    2017-10-18

    A quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires is developed. The classical plasmon model assumes the excited electron in semiconductors feels a restoring force generated by a harmonic-oscillator potential. Although it is successfully applied to explain the terahertz photoconductivity in semiconductor nanowires, the classical treatment of the potential weakens accurate theoretical analysis. Here I treat the potential in a full quantum way and present an exact analytical formula for photoconductivity. The formula not only gives more reasonable photoconductivity, but also has the same conciseness when compared with that of the classical plasmon model. The validity of the quantum plasmon model is proved independently by numerical calculations in real space.

  8. Influence of EL2 deep level on photoconduction of semi-insulating GaAs under ultrashort pulse photoinjection

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Xie, Guangyong

    2016-02-01

    To investigate the influence of EL2 deep level on photoconduction of in semi-insulating GaAs (SI-GaAs), a 3 mm-electrode-gap lateral SI-GaAs photoconductive chip was manufactured and tested by using ultrashort pulse laser with 1064 nm wavelength, 10 ns pulsewidth, 3.0 mm light spot diameter and single pulse energy mean of 3.0 mJ. Based on the experimental results and the theory of trapping effect, the photon absorption process of EL2 defects in SI-GaAs is analyzed. For the influence of EL2 deep level, the lifetime of the electron gets shorter and the persistent photoconductivity (PPC) is significant. With increasing of voltage, the decay time constant of photoconduction is reduced and the decay index gets bigger for the ultrashort pulse photoinjection.

  9. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  10. Electron irradiation effects on photoconductive semiconductor switches (PCSSs) used in sub-nanosecond transient generators

    SciTech Connect

    Islam, N.E.; Schamiloglu, E.; Kirby, T.H.; Shipley, B.; Kemp, W.T.; Schoenberg, J.S.H.; Howard, J.W. Jr.

    1999-12-01

    Radiation-induced damage occurs in GaAs photoconductive semiconductor switches used in sub-nanosecond transient generators when subjected to 600 keV and 6 MeV electron irradiation. These switches are made from semi-insulating (SI) compensated material through a EL2/carbon compensation mechanism, and the liquid encapsulated Czochralski process. New defect levels are formed as a result of the non-ionizing energy loss (NIEL) process. The formation of new defect levels in the device alters the compensating balance between the existing deep level EL2 trap/donors and carbon acceptors, and changes the material properties. As a result, two important parameters of the device are adversely affected--the hold-off voltage of the switch at the pulse-charging (off) state, and the rise time during the conduction (on) state. The hold-off voltage shifts to a lower value since there are more trap-filled regions available that can fill up and alter the homogeneous nature of the device material. Unstable filamentary conduction then occurs at a lower voltage and leads to premature breakdown. As with EL2 trap levels, new defect states induced by electron irradiation will further contribute to the delay in the rise time of the switch. The rise time determines the maximum energy transferred to the load. The electron damage mechanism and its effects on the switch characteristics depend on the material properties. Intrinsic material, or material made through compensation other than through the deep donor and shallow acceptor balancing process are not expected to behave similarly. Simulation results at higher bias show a merged degradation of material properties. The switch current-voltage (I-V) characteristic when the bias increases to the kilovolt range is similar to trap-dominated semiconductors. An initial sublinear current regime at low bias is followed by a super-linear regime of current flow at higher bias, and is in agreement with earlier observations.

  11. Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection.

    PubMed

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S S; Mathimalar, S; Nanal, Vandana; Pillay, R G; Döhler, G H

    2015-03-09

    We report here a photoconductive material for THz detection with sub-picosecond carrier lifetime made by C(12) (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C(12)) ions. With an increase of the irradiation dose from ~10(12) /cm(2) to ~10(15) /cm(2) the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, whereas that of usual non-irradiated SI-GaAs is ~70 picosecond. This decreased carrier lifetime has resulted in a strong improvement in THz pulse detection compared with normal SI-GaAs. Improvement in signal to noise ratio as well as in detection bandwidth is observed. Carbon irradiated SI-GaAs appears to be an economical alternative to low temperature grown GaAs for fabrication of THz devices.

  12. Ohmic contact to GaAs semiconductor

    NASA Technical Reports Server (NTRS)

    Hovel, H. J.; Woodall, J. M.

    1980-01-01

    Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.

  13. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-07

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.

  14. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    SciTech Connect

    Malevich, Y. V. Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-21

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  15. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    NASA Astrophysics Data System (ADS)

    Malevich, Y. V.; Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-01

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  16. The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System

    NASA Astrophysics Data System (ADS)

    Kurt, H. Hilal; Tanrıverdi, Evrim

    2017-07-01

    The aim of this study is to examine the electrical and optical comparative analysis of semi-insulating GaAs and GaP photoconductive electrodes in an infrared converter system with a resistivity of >107 Ω cm for the same interelectrode distance d and gas pressure p experimentally and theoretically, when the discharge cell has been filled by argon. To provide the stability of the semiconductor electrode in Ar media, the experiments were carried out in Townsend and glow discharge regimes for various parameter sets of pressure, interelectrode gap and discharge voltage. When the discharge exceeds a critical voltage value, some N-shape CVC s, which stem from both semiconductors and Ar gas, have been observed. To compare the features of the GaAs and GaP cathodes, the COMSOL multiphysics programme is used under the Ar media. The mean electron energy, thermal velocity, surface charge density, space charge and initial electron densities, and electron mobilities have been calculated for both semiconductor materials. It has been found that the electron mobility μe, electron thermal velocity, surface charge density σ and mean electron energy of GaAs is higher than those of GaP; hence, GaAs has better opto-electronic features compared to GaP. In addition, the experiments on the optical explorations prove that GaAs exhibit better optical response in the infrared region. The explored transport characteristics of the semiconductor electrodes are of importance, and they have to be taken into account when studying plasma cells.

  17. Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences.

    PubMed

    Reid, Matthew; Fedosejevs, Robert

    2005-01-01

    InAs has previously been reported to be an efficient emitter of terahertz radiation at low excitation fluences by use of femtosecond laser pulses. The scaling and saturation of terahertz emission from a (100) InAs surface as a function of excitation fluence is measured and quantitatively compared with the emission from a GaAs large-aperture photoconductive switch. We find that, although the instantaneous peak radiated terahertz field from (100) InAs exceeds the peak radiated signals from a GaAs large-aperture photoconductive switch biased at 1.6 kV/cm, the pulse duration is shorter. For the InAs source the total energy radiated is less than can be obtained from a GaAs large-aperture photoconductive switch.

  18. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  19. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Shi, Yu-Lei; Zhou, Qing-Li; Zhang, Cun-Lin

    2009-10-01

    This paper investigates the ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs in detail by using a terahertz pump-emission technique. Based on theoretical modelling, it finds that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed after the excitation of pump pulse and we attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperature-dependent measurements are also performed to verify this trapping model.

  20. Simple laser velocimeter that uses photoconductive semiconductors to measure optical frequency differences.

    PubMed

    Wang, C C; Davidson, F; Trivedi, S

    1995-10-01

    The dc photocurrents generated by steady-state moving space-charge fields inside photoconductive semiconductors containing deep level donors and traps can be used to determine the relative frequency differences between the two interfering optical fields that establish the space-charge fields. A simple laser velocimeter that uses a semi-insulating GaAs:Cr sample to detect the Doppler frequency shift between two laser beams is demonstrated.

  1. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  2. EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Wang, Wei; Niu, Hongjian; Zhang, Xianbin; Ji, Weili

    2005-01-01

    Experiments of a lateral semi-insulating GaAs photoconductive switch, both linear and nonlinear mode of the switch were observed when the switch was triggered by 1064 nm laser pulses, with energy of 1.9 mJ and the pulse width of 60 ns, and operated at biased electric field of 4.37 kV/cm. It"s wavelength is longer than 876nm, but the experiments indicate that the semi-insulating GaAs photoconductive switches can absorb 1064 nm laser obviously, which is out of the absorption range of the GaAs material. It is not possible to explain this behavior by using intrinsic absorption mechanism. We think that there are two mostly kinds of absorption mechanisms play a key part in absorption process, they are the two-steps-single-photon absorption that based on the EL2 energy level and two-photon absorption.

  3. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOEpatents

    Mar, Alan; Zutavern, Fred J.; Loubriel, Guillermo

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  4. Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

    SciTech Connect

    Kingsley, L.E. . Pulse Power Center); Donaldson, W.R. . Lab. for Laser Energetics)

    1993-12-01

    The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above [approximately]10 kV/cm. At these biases, the switch also remained conductive for a much longer time ([approximately]100 ns) than the material recombination time ([approximately]1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance.

  5. Nanoscale Photoconductivity Imaging of Thin-film Semiconductors by Laser-assisted Microwave Impedance Microscopy

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Wu, Di; Ren, Yuan; Yang, Seungcheol; Sun, Liuyang; Li, Xiaoqin; Lai, Keji

    The photo-response of semiconductors is usually studied by detecting the photocurrent across source-drain electrodes under light illumination. By integrating the microwave impedance microscopy (MIM) technique with focused-laser stimulation, we are able to perform the real-space photoconductivity mapping of photo-sensitive materials without the need of patterning contact electrodes. Here, we report the MIM results of various thin-film materials, such as In2Se3 nano-sheets and transition metal dichalcogenides (TMD) flakes, illuminated by laser beams of different wavelengths in the ambient condition. With no or below-gap illumination, the samples were highly resistive, as indicated by the low MIM signals. The MIM contrast emerges under above-gap light and increases as increasing laser intensity, which clearly demonstrates the local imaging of photoconductivity rather than the transport photocurrent. Interestingly, clear domain structures with mesoscopic length scales were seen in the data due to the coexistence of multiple phases in In2Se3. The unique combination of MIM and laser stimulation thus provides a new direction to explore the microscopic origin of various light-driven phenomena in complex systems. We gratefully acknowledge financial support from NSF.

  6. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    DOEpatents

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  7. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  8. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  9. 20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas.

    PubMed

    Hale, P J; Madeo, J; Chin, C; Dhillon, S S; Mangeney, J; Tignon, J; Dani, K M

    2014-10-20

    We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.

  10. Ultrafast terahertz emission properties in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Aihua; Shi, Yulei; Zhou, Qingli

    2015-08-01

    Ultrafast carrier dynamics in Schottky barriers is an extremely active area of research in recent years. The observation of the generation of terahertz pulses from metal/semiconductor interfaces provides a technique to characterize electronic properties of these materials. However, a detailed analysis of these phenomena has not been performed satisfactorily. In this work, the measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors in the terahertz beams are also observed in the temperature-dependent measurements and the femtosecond pump-generation studies of the Au/GaAs interfaces. These effects can be fully explained in terms of the dynamics of carrier transfer in the Au/GaAs Schottky barriers, which involves the internal photoelectric emission and the electron tunneling effect, and picosecond time constants are found for these processes.

  11. Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

    NASA Astrophysics Data System (ADS)

    Jeanjean, P.; Sicart, J.; Robert, J. L.; Mollot, F.; Planel, R.

    1991-04-01

    Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively doped with silicon. Galvanomagnetic measurements show that SPSs exhibited an electrical behaviour similar to that of AlxGal{1-x}As : Si alloy (0.32 < x < 0.35). The Hall mobility was increased under illumination and persistent photoconductivity (PPC) was observed at low temperature (DX center). Ibermal annealing of PPC was performed by increasing the measurement temperature. Two plateaus are observed in the n_H(T) curves in uniformly doped SPSs whereas only one plateau was present in selectively doped SPSs. These experimental results are interpreted in terms of the multibarrier model of the DX center recently proposed in AIxGal{1-x}As: Si. Nous présentons des résultats de mesures d'effet Hall et photo-Hall obtenus entre 4 K et 400 K dans des superréseaux AlAs / GaAs de courtes périodes (25 Å < P < 50 Å) déposées par MBE et dopées au silicium de manière uniforme ou sélectivement dans GaAs. Les mesures de concentration de porteurs et de mobilité par effet Hall à l'obscurité montrent que ce type de SPS (short period superiattice) présente un comportement électrique voisin de l'alliage AIxGal{1-x}As: Si de teneur en aluminium équivalente (0.32 < x < 0.35). Les mesures de photo-Hall à basse température montrent que ces SPS présentent également une photeconductivité persistente (PPC) et une augmentation de mobilité sous éclairement. La présence d'un plateau de PPC à basse temperature (T< 90 K) est caractéristique du centre métastable DX dans tous les cas. Des mesures de décroissance du nombre de porteurs mesurés à l'obscurité aprés éclairement quand la température augmente (capture thermique), mettent en évidence la présence de deux plateaux correspondant à deux barrières thermiques de l'état métastable du centre DX dans les SPS

  12. Photoconductivity of transparent perovskite semiconductor BaSnO{sub 3} and SrTiO{sub 3} epitaxial thin films

    SciTech Connect

    Park, Jisung; Kim, Useong; Char, Kookrin

    2016-02-29

    We measured the photoconductivity of transparent semiconductor BaSnO{sub 3} and compared it with that of SrTiO{sub 3}. Epitaxial BaSnO{sub 3} and SrTiO{sub 3} films were grown on MgO substrates to exclude any contribution to photoconductivity from the substrate due to its large bandgap. In spite of the same perovskite structure and similar bandgap sizes (3.1–3.2 eV), the photoconductive behaviors of the two materials are quite different in terms of their magnitude and time dependence. The photoconductivity of BaSnO{sub 3} persists for many hours after removal from light exposure, whereas the photoconductivity of SrTiO{sub 3} shows little persistent conductivity. In addition, the photoconductivity of BaSnO{sub 3} increases to a value over 25 times higher than that of SrTiO{sub 3}, after 3 h of illuminations. The spectral photoconductive responses of both BaSnO{sub 3} and SrTiO{sub 3} show their highest peaks below 400 nm, suggesting that the electron-hole pair generation is the main mechanism of the photoconductivity for the both materials. The large persistent photoconductivity of BaSnO{sub 3} seems related with deep level defects with relatively large barriers for charge trapping and detrapping.

  13. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  14. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

    SciTech Connect

    Wang, Langning Xun, Tao; Yang, Hanwu; Liu, Jinliang; Zhang, Yu

    2014-04-15

    Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

  15. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches.

    PubMed

    Wang, Langning; Xun, Tao; Yang, Hanwu; Liu, Jinliang; Zhang, Yu

    2014-04-01

    Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

  16. Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Şale, Yasin; Balaban, Ertan

    2014-12-07

    The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

  17. Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

    NASA Astrophysics Data System (ADS)

    Rumyantsev, V. V.; Kozlov, D. V.; Morozov, S. V.; Fadeev, M. A.; Kadykov, A. M.; Teppe, F.; Varavin, V. S.; Yakushev, M. V.; Mikhailov, N. N.; Dvoretskii, S. A.; Gavrilenko, V. I.

    2017-09-01

    The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of ‘vacancy-doped’ HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

  18. Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer

    NASA Astrophysics Data System (ADS)

    Zhao, Han; Kim, Hyoung-Sub; Zhu, Feng; Zhang, Manhong; OK, Injo; Park, Sung Il; Yum, Jung Hwan; Lee, Jack C.

    2007-10-01

    We present gallium arsenide (GaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with a thin HfO2 gate dielectric and a thin germanium nitride (GexNy) interfacial passivation layer (IPL). TaN /HfO2/GexNy/GaAs MOSCAPs show a low interface state density and a thin equivalent oxide thickness (1.6nm). Compared to GaAs MOSCAPs with germanium (Ge) IPL, the GexNy IPL has a smaller slow trap density, which is confirmed by improved C-V characteristics without humps near the flatband voltage. The lower rate of flatband voltage shift and gate leakage decreasing under constant gate voltage stress were also demonstrated in GaAs MOSCAPs with GexNy IPL than the Ge IPL.

  19. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  20. Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch

    NASA Astrophysics Data System (ADS)

    Wilson, Nicholas; Mauch, Daniel; Meyers, Vincent; Feathers, Shannon; Dickens, James; Neuber, Andreas

    2017-08-01

    The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (˜3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

  1. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  2. Persistent Photoconductivity in II-VI Mixed Semiconductors Related Critical Phenomena and Applications

    DTIC Science & Technology

    1991-03-31

    VI Semiconductor Thin Films, (3) Comparison Between II-VI and III-V Semiconductors and (4) PCC Transient Behavior . 14. SIWCT TEI S NtIR0PAE I&Pfcu04 I7...excitation photon dose have been measured. Furthermore, the PPC behavior has been investigated under different bias voltage, Vb. We found for the first... behavior in semiconductor thin films since eventually all the novel opto- electronic devices utilizing PPC mechanism will be fabricated from thin films

  3. Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S. S.; Nanal, Vandana; Pillay, R. G.

    2014-02-01

    We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ˜35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (1014 ions/cm2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ˜800.

  4. Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe

    SciTech Connect

    Bose, D. N.; Pal, Sarbari

    2001-06-15

    Single crystals of p-GaTe were grown by the Bridgman technique and characterized through x-ray diffraction, energy-dispersive x-ray analysis, x-ray photoemission spectroscopy, and transmission electron microscopy studies. The photoconductivity spectral response for in-plane conduction showed a peak at 747 nm (1.66 eV). Photoconductivity gain was determined in two orthogonal directions from which the majority carrier (hole) lifetimes were found to be 3.43{times}10{sup {minus}7} and 2.03{times}10{sup {minus}6}s, respectively, parallel and perpendicular to the layer planes. Studies of the temperature dependence of conductivity in the directions along and perpendicular to the layer planes were carried out between 10 and 80 K. Along the layer planes the conductance G{sub {parallel}} varied as lnT between 12 and 20 K, characteristic of weak localization, while between 20 and 50 K the conductivity {sigma}{sub {parallel}} varied as T{sup 1/2}. In the perpendicular direction the conductance G{sub {perpendicular}} varied as exp(T/T{sub 0}){sup 1/3} between 9 and 20 K and the conductivity {sigma}{sub {perpendicular}} varied as exp(T/T{sub 0}){sup 1/4} between 20 and 50 K, characteristic of hopping conduction in two and three dimensions, respectively. Negative transverse magnetoresistance was observed at 10 K for conduction in both directions for magnetic fields H{lt}0.4T, the increase in conductance being found to be proportional to H{sup 2}. Band conduction with positive magnetoresistance was observed for both current directions at T{gt}70K. The I-V characteristics at 10 K showed quantized behavior due to electron tunneling across potential barriers caused by stacking faults between layer planes.

  5. New Gate Dielectric Oxides for GaAs and Other Semiconductors*

    NASA Astrophysics Data System (ADS)

    Hong, M.

    2000-03-01

    It is well known that electrons move much faster in GaAs than in Si, and this attribute makes the GaAs-based metal oxide semiconductor field effect transistors (MOSFETs) very attractive for high-frequency, high-speed circuits applications. However, identifying a proper insulating oxide for GaAs has been a problem puzzling researchers over 35 years. Recently we discovered that the use of a mixed oxide dielectric Ga_2O_3(Gd_2O_3)^1 formed inversion and accumulation channels on GaAs surfaces, with a low interfacial density of states (D_it) of mid-10^10 cm-2eV-1. Subsequently, we have demonstrated the p- and n- inversion channel MOSFETs^2 and CMOS circuits^3. All oxides in this work were prepared by ultrahigh vacuum deposition from e-beam sources. The initial growth ( 10 Åof Ga_2O_3(Gd_2O_3) film on GaAs takes place from nucleating a thin epitaxial layer of pure Gd_2O_3. In fact, mono-domain, single crystalline Gd_2O3 films (ɛ =12) can be grown on GaAs (100) surface in the (110) Mn_2O3 structure, and that show leakage currents as low as 10-4 A/cm^2 at 10 MV/cm for a film only 25 Åthick^4. We have extended our studies to other rare earth oxides and other semiconductors. For example, low-D_it GaN MOS diodes and GaN MOSFETs operated at 400^circC were obtained. The GaN MOSFET has potential applications in high power switching and high temperature device operation. More remarkably, we have found recently that another rare earth oxide, Y_2O3 (ɛ = 18) showed excellent electrical properties as a gate dielectric for Si, to replace the current SiO_2, where the thickness is now approaching the quantum limit^5. *In collaboration with J. Kwo, A. R. Kortan, J. N. Baillargeon, J. P. Mannaerts, F. Ren, Y. C. Wang, T. S. Lay, H. Ng, R. Opila, K. L. Queeney, Y. J. Chabal, T. Boone, J. J. Krajewski, A. M. Sergent, J. M. Rosamilia, M. Passlack, D. W. Murphy, and A. Y. Cho. 1. M. Hong, et al, J. Vac. Sci. Technol. B14, 2297, (1996). 2. F. Ren et al, IEDM Technical Digest, p.943, (1996

  6. Impact of the Metal Adhesion Layer on the Radiation Power of Plasmonic Photoconductive Terahertz Sources

    NASA Astrophysics Data System (ADS)

    Turan, Deniz; Corzo-Garcia, Sofia Carolina; Yardimci, Nezih Tolga; Castro-Camus, Enrique; Jarrahi, Mona

    2017-08-01

    The use of plasmonic contact electrodes in a photoconductive terahertz source offers high optical-to-terahertz conversion efficiencies. The high efficiency is because plasmonic contact electrodes concentrate a large portion of the incident optical pump beam in close proximity to the contact electrodes. By reducing the average transport path length of the photo-generated carriers from the contact electrodes, a larger number of the photocarriers drift to the terahertz radiating elements of the photoconductive source within a sub-picosecond time scale. Therefore, higher terahertz radiation power levels are achieved compared to a similar photoconductive source without plasmonic contact electrodes. Au is a preferred metal for plasmonic contact electrodes because of the strong plasmonic enhancement factors it offers at near-infrared optical wavelengths. However, it requires an adhesion layer to stick well to most III-V semiconductor substrates used in photoconductive terahertz sources. In this paper, we analyze the impact of the Au adhesion layer on the performance of plasmonic photoconductive sources fabricated on a GaAs substrate. Our analysis suggests that Cr is the most promising adhesion layer for plasmonic contact electrodes. We show that the use of a Cr adhesion layer instead of Ti, which is used in previously demonstrated plasmonic photoconductive sources, offers up to an 80% enhancement in the generated terahertz powers. We report record-high terahertz power emissions of up to 6.7 mW from plasmonic photoconductive sources with Cr/Au contacts.

  7. TlHgInS 3 : An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

    SciTech Connect

    Li, Hao; Malliakas, Christos D.; Han, Fei; Chung, Duck Young; Kanatzidis, Mercouri G.

    2015-08-11

    The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) angstrom, b = 3.9132(8) angstrom, c = 21.403(4) angstrom, beta = 104.16(3)degrees, V = 1130.1(8) angstrom(3), and rho = 7.241 g/cm(3). The structure is a unique three-dimensional framework with parallel tunnels, which is formed by (1)(infinity)[InS33-] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of similar to 4.32 G Omega cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (mu tau) of the electrons and holes estimated from the photocurrent measurements are (mu tau)(e) approximate to 3.6 x 10(-4) cm(2)/V and (mu tau)(h) approximate to 2.0 x 10(-4) cm(2)/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.

  8. Studies on organic semiconductors. 15: Effects of the substituents on the photoconductivities of substituted anthracenes

    NASA Technical Reports Server (NTRS)

    Sugimoto, A.; Kato, S.; Inoue, H.; Imoto, E.

    1985-01-01

    The photocurrents of the substituted anthracenes, 1,5-diacetylanthracene (2), 1-acetylanthracene (3), 9-acetylanthracene (4), 1,5-dichloroanthracene (5), 1,5-diethylanthracene (6), 1,5-dimethoxyanthracene (7), 9-cyanoanthracene (8), and anthracene (1) were measured by using their surface type cells in nitrogen. The compounds of (1), (5), (6), (7), and (8) showed the photocurrent spectra which corresponded to the absorption spectra of their evaporated films. In the cases of (2) and (3), however, the anomalous photocurrent appeared in the threshold region of their absorption spectra. The appearance of the anomalous photocurrent was characteristic of anthracenes having the acetyl group at 1- and/or 5-position. The magnitude of the photocurrents of the 1,5-disubstituted anthracenes was similar to that of (1). The photocurrents of the monosubstituted anthracenes were smaller than that of (1). Among the monosubstituted anthracenes, the compound (4) showed no photocurrent under the same conditions. Contrary to the results obtained in the cases of phenazines, the photoconductivities of the anthracene derivatives became better in air.

  9. Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Choi, Kyoung Jin; Moon, Jae Kyoung; Park, Min; Kim, Haechon; Lee, Jong-Lam

    2002-05-01

    Effects of photowashing treatment on gate leakage current (IGD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of IGD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of IGD.

  10. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  11. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  12. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  13. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

    PubMed

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  14. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  15. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  16. High-power stacked Blumlein pulsers commutated by a photoconductive switch treated with amorphic diamond

    NASA Astrophysics Data System (ADS)

    Agee, Forrest J.; Davanloo, Farzin; Camase, Tiberius; Collins, Carl B., Jr.

    2002-06-01

    Photoconductive switching of the stacked Blumlein pulsers, developed at the Univ. of Texas at Dallas (UTD), currently produces high power, nanosecond pulses with risetimes on the order of 200 ps. The device has a compact geometry and is commutated by a single GaAs photoconductive semiconductor switch (PCSS) triggered by a low power laser diode array. Filamentation of the conductivity associated with high gain GaAs switches produces such high current density that the switches are damages near the metal-semiconductor interface and the lifetime is limited. The semiconductor properties of amorphic diamond can be employed to improve the PCSS longevity by coating the switch cathode or anode areas or both. For example if the switch cathode is coated, the tunneling of electrons from amorphic diamond to GaAs during the off-state stage of PCSS operation provides pre-avalanche sites that diffuse conduction current upon switch activation. This report presents the progress toward improving the high gain switch operation and lifetime by advanced treatments with amorphic diamond coatings. A significant improvement in switch lifetime is demonstrated by testing the diamond-coated switch performance in a stacked Blumlein prototype pulser.

  17. Auger electron spectroscopy investigation of degradation effect in GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Pandelisev, K.A.; Wang, E.Y.

    1982-01-01

    Au-interfacial oxide layer (GeO/sub 2/, Sb/sub 2/O/sub 3/, Bi/sub 2/O/sub 3/, SnO/sub 2/ and native oxide mixture of AS/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/)-semiconductor (GaAs) structures were investigated by the Auger Electron Spectroscopy Method. The results of depth profiling with Ar/sup +/-ion sputtering are presented for all metal-insulator-semiconductor (MIS) structures. ''Metal'' atoms from deposited interfacial oxide layers (Ge from Ge/sub 2/O/sub 3/, Sb from Sb/sub 2/O/sub 3/, Bi from Bi/sub 2/O/sub 3/, and Sn from SnO/sub 2/) were observed on the surface. Only As atoms were observed for the native oxide mixture of As/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/ interfacial layer. These findings suggest that As/sub 2/O/sub 3/ is the dominating oxide at the metal-oxide interface for native oxide GaAs MIS solar cells. The interfacial reaction takes place between Au and the interfacial layer at room temperature. The ''diffusion'' of metal atoms from the interfacial layer towards the surface is suspected to play a role in degradation effect in GaAs MIS solar cells.

  18. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    DTIC Science & Technology

    2016-09-27

    HARD CONTACT expose 2.5 s (9 mW/cm2)  Hotplate 120 °C actual for 2 min  MA6 FLOOD expose 30 s  Develop in MIF 300 for 50 s  Etch alignment...for 2 min  MA6 FLOOD expose 30 s  Develop in MIF 300 for 50 s  Etch alignment marks 3) Evaporate a-Si a) E-beam evaporate 1000 Å Si 4...C for 2m  MA6 FLOOD expose 30 s  Develop MIF 300 for 50 s 2) Etch annealed SiNx windows a) 30-sccm CF4, 2-sccm O2, 5 mT, 100-W bias, 500-W ICP

  19. Avalanche Photoconductive Switching

    DTIC Science & Technology

    1989-06-01

    held off across the switch. In our case this corresponds to 70 kV/cm and is limited by surface flashover . The pulse length is determined by the...off across the gap of the switch, which in turn appears to be limited by surface flashover . There appears to be a threshold electric field of 20-60...and understand this mode of operation. Introduction Laser activated photoconductive switching in semiconductors is a promising technology for high

  20. Photoconductive switching for high power microwave generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-10-01

    Photoconductive switching is a technology that is being increasingly applied to generation of high power microwaves. Two primary semiconductors used for these devices are silicon and gallium arsenide. Diamond is a promising future candidate material. This paper discusses the important material parameters and switching modes, critical issues for microwave generation, and future directions for this high power, photoconductive switching technology.

  1. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, T. C.; Temmerman, W. M.; Szotek, Z.; Svane, A.; Petit, L.

    2007-04-01

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  2. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  3. Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces.

    PubMed

    Snyder, Patrick J; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

    2017-06-01

    Wide bandgap semiconductors such as gallium nitride (GaN) exhibit persistent photoconductivity properties. The incorporation of this asset into the fabrication of a unique biointerface is presented. Templates with lithographically defined regions with controlled roughness are generated during the semiconductor growth process. Template surface functional groups are varied using a benchtop surface functionalization procedure. The conductivity of the template is altered by exposure to UV light and the behavior of PC12 cells is mapped under different substrate conductivity. The pattern size and roughness are combined with surface chemistry to change the adhesion of PC12 cells when the GaN is made more conductive after UV light exposure. Furthermore, during neurite outgrowth, surface chemistry and initial conductivity difference are used to facilitate the extension to smoother areas on the GaN surface. These results can be utilized for unique bioelectronics interfaces to probe and control cellular behavior. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.

    PubMed

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones.

  5. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, C.

    1987-12-07

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a determinable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line. 4 figs.

  6. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, Christen

    1990-01-01

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

  7. Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs

    NASA Astrophysics Data System (ADS)

    Albe, Karsten; Nordlund, Kai; Nord, Janne; Kuronen, Antti

    2002-07-01

    An analytical bond-order potential for GaAs is presented, that allows one to model a wide range of properties of GaAs compound structures, as well as the pure phases of gallium and arsenide, including nonequilibrium configurations. The functional form is based on the bond-order scheme as devised by Abell-Tersoff and Brenner, while a systematic fitting scheme starting from the Pauling relation is used for determining all adjustable parameters. Reference data were taken from experiments if available, or computed by self-consistent total-energy calculations within the local density-functional theory otherwise. For fitting the parameters, only structural data of the metallic phases of gallium and arsenide as well as those of different GaAs phases were used. A number of tests on point defect properties, surface properties, and melting behavior have been performed afterward in order to validate the accuracy and transferability of the potential model, but were not part of the fitting procedure. While point defect properties and surfaces with low As content are found to be in good agreement with literature data, the description of As-rich surface reconstructions is not satisfactory. In the case of molten GaAs we find support for a structural model based on experiment that indicates a polymerized arsenic phase in the melt.

  8. Photoconductivity of activated carbon fibers

    SciTech Connect

    Kuriyama, K.; Dresselhaus, M.S. )

    1990-08-01

    The photoconductivity is measured on a high-surface-area disordered carbon material, namely activated carbon fibers, to investigate their electronic properties. Measurements of decay time, recombination kinetics and temperature dependence of the photoconductivity generally reflect the electronic properties of a material. The material studied in this paper is a highly disordered carbon derived from a phenolic precursor, having a huge specific surface area of 1000--2000m{sup 2}/g. Our preliminary thermopower measurements suggest that this carbon material is a p-type semiconductor with an amorphous-like microstructure. The intrinsic electrical conductivity, on the order of 20S/cm at room temperature, increases with increasing temperature in the range 30--290K. In contrast with the intrinsic conductivity, the photoconductivity in vacuum decreases with increasing temperature. The recombination kinetics changes from a monomolecular process at room temperature to a biomolecular process at low temperatures. The observed decay time of the photoconductivity is {approx equal}0.3sec. The magnitude of the photoconductive signal was reduced by a factor of ten when the sample was exposed to air. The intrinsic carrier density and the activation energy for conduction are estimated to be {approx equal}10{sup 21}/cm{sup 3} and {approx equal}20meV, respectively. The majority of the induced photocarriers and of the intrinsic carriers are trapped, resulting in the long decay time of the photoconductivity and the positive temperature dependence of the conductivity. 54 refs., 11 figs., 3 tabs.

  9. Photoconductivity of Activated Carbon Fibers

    DOE R&D Accomplishments Database

    Kuriyama, K.; Dresselhaus, M. S.

    1990-08-01

    The photoconductivity is measured on a high-surface-area disordered carbon material, namely activated carbon fibers, to investigate their electronic properties. Measurements of decay time, recombination kinetics and temperature dependence of the photoconductivity generally reflect the electronic properties of a material. The material studied in this paper is a highly disordered carbon derived from a phenolic precursor, having a huge specific surface area of 1000--2000m{sup 2}/g. Our preliminary thermopower measurements suggest that this carbon material is a p-type semiconductor with an amorphous-like microstructure. The intrinsic electrical conductivity, on the order of 20S/cm at room temperature, increases with increasing temperature in the range 30--290K. In contrast with the intrinsic conductivity, the photoconductivity in vacuum decreases with increasing temperature. The recombination kinetics changes from a monomolecular process at room temperature to a biomolecular process at low temperatures. The observed decay time of the photoconductivity is {approx equal}0.3sec. The magnitude of the photoconductive signal was reduced by a factor of ten when the sample was exposed to air. The intrinsic carrier density and the activation energy for conduction are estimated to be {approx equal}10{sup 21}/cm{sup 3} and {approx equal}20meV, respectively. The majority of the induced photocarriers and of the intrinsic carriers are trapped, resulting in the long decay time of the photoconductivity and the positive temperature dependence of the conductivity.

  10. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect

    Hai, Pham Nam; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki

    2014-09-21

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

  11. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  12. Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

    NASA Astrophysics Data System (ADS)

    Bouzid, Assil; Pasquarello, Alfredo

    2017-07-01

    We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the defect generation process, in analogy to experimental growth conditions in the presence of extra electrons or holes. The scheme is illustrated in the case of GaAs, for which we generate melt-quenched amorphous structures through molecular dynamics at various Fermi levels. By a combined analysis which involves both the atomic structure and a Wannier-function decomposition of the electronic structure, we achieve a detailed description of the generated defects as a function of the Fermi level. This leads to the identification of As—As homopolar bonds and Ga dangling bonds for Fermi levels set in the vicinity of the valence band. These defects convert into As dangling bonds and Ga—Ga homopolar bonds, as the Fermi level moves toward the conduction band. This demonstrates a computer-aided procedure to identify semiconductor defects in an unbiased way.

  13. Structural and electronic properties of GaAs and GaP semiconductors

    SciTech Connect

    Rani, Anita; Kumar, Ranjan

    2015-05-15

    The Structural and Electronic properties of Zinc Blende phase of GaAs and GaP compounds are studied using self consistent SIESTA-code, pseudopotentials and Density Functional Theory (DFT) in Local Density Approximation (LDA). The Lattice Constant, Equillibrium Volume, Cohesive Energy per pair, Compressibility and Band Gap are calculated. The band gaps calcultated with DFT using LDA is smaller than the experimental values. The P-V data fitted to third order Birch Murnaghan equation of state provide the Bulk Modulus and its pressure derivatives. Our Structural and Electronic properties estimations are in agreement with available experimental and theoretical data.

  14. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

    2016-10-01

    We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

  15. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

    DOE PAGES

    Alberi, K.; Fluegel, B.; Beaton, D. A.; ...

    2012-07-09

    Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

  16. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

    PubMed

    Sasaki, Hirokazu; Otomo, Shinya; Minato, Ryuichiro; Yamamoto, Kazuo; Hirayama, Tsukasa

    2014-06-01

    Phase-shifting electron holography and Lorentz microscopy were used to map dopant distributions in GaAs compound semiconductors with step-like dopant concentration. Transmission electron microscope specimens were prepared using a triple beam focused ion beam (FIB) system, which combines a Ga ion beam, a scanning electron microscope, and an Ar ion beam to remove the FIB damaged layers. The p-n junctions were clearly observed in both under-focused and over-focused Lorentz microscopy images. A phase image was obtained by using a phase-shifting reconstruction method to simultaneously achieve high sensitivity and high spatial resolution. Differences in dopant concentrations between 1 × 10(19) cm(-3) and 1 × 10(18) cm(-3) regions were clearly observed by using phase-shifting electron holography. We also interpreted phase profiles quantitatively by considering inactive layers induced by ion implantation during the FIB process. The thickness of an inactive layer at different dopant concentration area can be measured from the phase image.

  17. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    SciTech Connect

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

    1989-01-01

    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  18. The friction behavior of semiconductors Si and GaAs in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.

    1984-01-01

    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  19. Using photoconductivity to improve image-tube gating speeds

    NASA Astrophysics Data System (ADS)

    Gobby, P. L.; Yates, G. J.; Jaramillo, S. A.; Noel, B. W.; Aeby, I.

    1983-08-01

    A technique using the photoconducting of semiconductor and insulator photocathodes to improve image tube gating speeds is presented. A simple model applicable to the technique and a preliminary experiment are described.

  20. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  1. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    NASA Astrophysics Data System (ADS)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  2. Towards efficient and tunable generation of THz radiation from quantum dot based ultrafast photoconductive antennae (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Gorodetsky, Andrei; Fedorova, Ksenia A.; Bazieva, Natalia; Rafailov, Edik U.

    2016-10-01

    We present our recent results on CW and pulsed THz generation in quantum dot(QD) based photoconductive antennae(PCA) pumped by ultrafast and dual wavelength semiconductor lasers. QDPCA substrate incorporates InAs QDs in GaAs matrix, thus keeping semiconductor carrier mobility at higher levels that is typical for SI GaAs, while QDs themselves serve as lifetime shortening centres, allowing to achieve subpicosecond operation as in LT-GaAs. Thus, such substrates combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. Moreover, by changing QD size and mutual allocation, effective pump wavelengths can be tuned in the range between 0.9-1.3 μm, which is well beyond the GaAs energies, hence compact and relatively cheap ultrafast and narrow line double-wavelength semiconductor and fibre pump lasers can be used for pumping such antennae for both pulsed and CW THz generation. For double wavelength operation of semiconductor lasers, we implement either stacked double volume Bragg gratings, or double-Littrow configuration with two independent diffraction gratings to achieve tunability of the generated THz signal. High thermal tolerance of QD wafers allowed pumping single-gapped antennae with lasers producing up to 250 mW of CW optical power at simultaneous double wavelength operation and up to 1W average optical power in pulsed regime. We show these QD based antennae combined with such pump lasers to generate pulsed and CW THz radiation that is superlinearly proportional to pump power and bias applied to antenna.

  3. High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

    NASA Astrophysics Data System (ADS)

    Liu, L. N.; Choi, H. W.; Xu, J. P.; Lai, P. T.

    2017-03-01

    A GaAs metal-oxide-semiconductor (MOS) capacitor using NbAlON as a gate dielectric with different Nb contents is fabricated. Experimental results show that the k value and crystallization temperature of the AlON dielectric can be improved by Nb incorporation, together with reduction in negative oxide charges. However, the interface quality and gate leakage become poorer as the Nb content increases, as confirmed by TEM and X-ray photoelectron spectroscopy results. Therefore, through comprehensively considering the advantages and disadvantages, the sample with a Nb/(Al+Nb) atomic ratio of 62.5% exhibits the best characteristics: high k value (23.3), low interface-state density (2.7 × 1012 cm-2/eV), small hysteresis (55 mV), small frequency dispersion, and low gate leakage current (2.66 × 10-5A/cm2 at Vfb + 1 V). By comparing with reported GaAs MOS devices with different high-k gate dielectrics, it can be suggested that NbAlON is a promising gate dielectric material to achieve excellent electrical performance for GaAs MOS devices.

  4. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

    PubMed Central

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φb) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

  5. Theoretical analysis of the optical properties of GaAs(001) surfaces and the strain-dependent lattice properties of semiconductors

    NASA Astrophysics Data System (ADS)

    Eryigit, Resul

    This thesis entails two theoretical studies of the properties of semiconductors. In the first part of the thesis Weber's bond charge model is modified to study the strain dependence of phonon frequencies and elastic constants of homopolar (Si and Ge) and heteropolar (GaAs) semiconductors in quasiharmonic approximation. The dispersion in the mode Gruneisen parameters (which characterize the pressure dependence of phonon frequencies) of these materials are calculated along the high symmetry directions of the Brillouin zone. Good agreement with experimental data is found. The shifts in phonon frequencies for Ge and CaAs grown pseudomorphically on Si(001) and Si(111) are investigated and it is found that the non-hydrostatic component of the lattice mismatched created strain mainly affects the longitudinal modes. Also, some conclusions are reached about the quality of the choice of ambient force constants. The second part of the thesis focuses on ab initio calculation of the optical response of different surfaces of semiconductors of importance in optoelectronics and microelectronics. Specifically, the dielectric function anisotropy of the (001) surface of GaAs is investigated for surfaces with Ga-terminated (4 x 2)-β and (4 x 2)-/beta 2 and As-terminated (2 x 4)-β and (2 x 4)-/beta 2 reconstructions. The atomic and electronic structure of the surfaces are determined by using first principles nonlocal pseudopotentials in the density functional theory framework within the local density approximation. Surface specific electronic features of the dielectric response are specified. It is found that the exact coordinates of the surface atoms are the most important parameters that determine the agreement between calculated and experimentally available anisotropies. As part of this section of the thesis, the general issue of designing surface optical diagnostics experiments to obtain surface dielectric functions is also addressed.

  6. Analysis of optical absorption in GaAs nanowire arrays.

    PubMed

    Guo, Haomin; Wen, Long; Li, Xinhua; Zhao, Zhifei; Wang, Yuqi

    2011-12-06

    In this study, the influence of the geometric parameters on the optical absorption of gallium arsenide [GaAs] nanowire arrays [NWAs] has been systematically analyzed using finite-difference time-domain simulations. The calculations reveal that the optical absorption is sensitive to the geometric parameters such as diameter [D], length [L], and filling ratio [D/P], and more efficient light absorption can be obtained in GaAs NWAs than in thin films with the same thickness due to the combined effects of intrinsic antireflection and efficient excitation of resonant modes. Optimized geometric parameters are obtained as follows: D = 180 nm, L = 2 μm, and D/P = 0.5. Meanwhile, the simulation on the absorption of GaAs NWAs for oblique incidence has also been carried out. The underlying physics is discussed in this work.PACS: 81.07.Gf nanowires; 81.05.Ea III-V semiconductors; 88.40.hj efficiency and performance of solar cells; 73.50.Pz photoconduction and photovoltaic effects.

  7. Persistent photoconductivity in YBa 2Cu 3O 6+ x films as a method of photo-doping near the semiconductor-metal transition

    NASA Astrophysics Data System (ADS)

    Kudinov, Vladimir I.

    1994-02-01

    Persistent photoconductivity and metastable photoinduced superconductivity recently discovered by Kudinov et.al. in YBa 2Cu 3O 6+x films are studied over the oxygen content 0 < x < 1. As evidenced, prolonged illumination of the films by visible light leads to essential enhancement of their metallic and superconducting properties. The observed phenomena are attributed to photoexcitation of additional mobile holes into CuO 2 planes (photodoping), allowing a metastable superconducting phase to be initiated. It is suggested that photoinduced superconductivity may have applications in fabrication of in situ optically tunable weak-link devices.

  8. Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Higurashi, Eiji; Okumura, Ken; Nakasuji, Kaori; Suga, Tadatomo

    2015-03-01

    Thermal management of high-power semiconductor lasers is of great importance since the output power and beam quality are affected by the temperature rise of the gain region. Thermal simulations of a vertical-external-cavity surface-emitting laser by a finite-element method showed that the solder layer between the semiconductor thin film consisting of the gain region and a heat sink has a strong influence on the thermal resistance and direct bonding is preferred to achieve effective heat dissipation. To realize thin-film semiconductor lasers directly bonded on a high-thermal-conductivity substrate, surface-activated bonding using an argon fast atom beam was applied to the bonding of gallium arsenide (GaAs) and silicon carbide (SiC) wafers. The GaAs/SiC structure was demonstrated in the wafer scale (2 in. in diameter) at room temperature. The cross-sectional transmission electron microscopy observations showed that void-free bonding interfaces were achieved.

  9. Photoconductive ultrafast low gap materials: pulsed THz emitters and detectors

    NASA Astrophysics Data System (ADS)

    Petrov, Branko; Fekecs, Andre; Chicoine, Martin; Schiettekatte, Francois; Ares, Richard; Morris, Denis

    2014-03-01

    Commonly photoconductive (PC) switches used for pulsed THz generation and detection are made on GaAs which works at 800 nm. However, there is a need for PC materials compatible with laser sources emitting at 1550 nm since they are of high interest for fiber-coupled devices to be integrated in THz imaging and spectroscopy systems. We have developed such materials based on low bandgap III-V semiconductors. With our novel approach, based on cold-implantation of heavy ions followed by a rapid thermal annealing (RTA) treatment, it was possible to obtain high resistivity (up to 2500 Ω . cm) and short lifetime (<1ps) materials. THz PC antennas were made on these materials and their characteristics were studied by using a THz time-domain spectroscopy (TDS) setup. The impact of the RTA process and different electrode designs were investigated in order to compare the characteristics of PC antennas in terms of amplitude, bandwidth, and signal to noise ratio. For the emitters, bias-voltage and pump-power dependences are shown. Remarkably high electric field (>50 kV/cm) could be applied for increased emission of pulsed THz radiation due to the high resistivity of our materials. Our THz-TDS setup offers measurement capabilities from 0.1 to 3 THz.

  10. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

    SciTech Connect

    Liu, L. N.; Choi, H. W.; Lai, P. T.; Xu, J. P.

    2015-11-23

    GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-like interface and near-interface traps.

  11. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  12. Effect of chemical surface treatments on non-native (Bi/sub 2/O/sub 3/) GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Wang, E.Y.; Pandelisev, K.A.

    1981-07-01

    GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi/sub 2/O/sub 3/ interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi/sub 2/O/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ''textured'' surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.

  13. Visualizing Donor-Acceptor-Bond Chemistry at Semiconductor Surfaces with STM: NH3 on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Brown, G.; Steinshnider, J.; Weimer, M.

    1997-03-01

    We have previously used STM to examine the room-temperature chemisorption of submonolayer amounts of ammonia on GaAs(110). Atomic-resolution topographs demonstrate this reaction is non-dissociative and that bond formation occurs through the donation of lone-pair electrons from the free molecule to cation dangling bonds at the surface(G. Brown and M. Weimer, J. Vac. Sci. Technol. B 13), 1679-1683 (1995). Reaction sites on both p- and n-type substrates are uncharged so that the screening of individual donor-acceptor-bond dipoles by substrate electrons is observed. We have recently studied the interactions between adsorbed molecules through the distribution of reaction sites as a function of separation vector in the surface plane. The pair correlation function reveals a strong, short-ranged repulsion along the GaAs(110) surface chains that completely excludes bonding at adjacent cation sublattice sites, but the observed anisotropy of the pair potential is inconsistent with the expected dipole-dipole forces between adsorbates. STS indicates ammonia chemisorption significantly disrupts the GaAs(110) surface states at saturation coverages less than 0.1 ML, and that observation, together with the anisotropic short-range nature of the pair potential, suggests the predominant lateral interaction in this system is substrate mediated.

  14. Quantum-dot based ultrafast photoconductive antennae for efficient THz radiation

    NASA Astrophysics Data System (ADS)

    Gorodetsky, Andrei; Bazieva, Natalia; Rafailov, Edik U.

    2016-03-01

    Here we overview our work on quantum dot based THz photoconductive antennae, capable of being pumped at very high optical intensities of higher than 1W optical mean power, i.e. about 50 times higher than the conventional LT-GaAs based antennae. Apart from high thermal tolerance, defect-free GaAs crystal layers in an InAs:GaAs quantum dot structure allow high carrier mobility and ultra-short photo carrier lifetimes simultaneously. Thus, they combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. By changing quantum dot size, composition, density of dots and number of quantum dot layers, the optoelectronic properties of the overall structure can be set over a reasonable range-compact semiconductor pump lasers that operate at wavelengths in the region of 1.0 μm to 1.3 μm can be used. InAs:GaAs quantum dot-based antennae samples show no saturation in pulsed THz generation for all average pump powers up to 1W focused into 30 μm spot. Generated THz power is super-linearly proportional to laser pump power. The generated THz spectrum depends on antenna design and can cover from 150 GHz up to 1.5 THz.

  15. Low-Electronegativity Overlayers and Enhanced Semiconductor Oxidation: Sm on Si(111) and GaAs(110) Surfaces.

    DTIC Science & Technology

    1986-04-15

    6 4 2 0=E F Binding Energy (eV) 81+02 hL/=13OeV Sl 2p Core --- 01 I1 0 I I 4,z eusz 6 4il0 - Bidn0nry(V I I I I I I GaAs + 02 hv=85eV AsSd Cores 1000 0 0 C 0.2 53 2 o4 6 4 2 0 -2 -4 Relative Binding Energy (eV) -... MEN

  16. Photoconductivity in Carbon Fibers.

    DTIC Science & Technology

    1987-10-30

    4191 728 PHOTOCONDUCTIVITY IN CARBON FJ9KRS(U) INARS S INST OF TECH CANMRIDGE J STEINBECK ET RL 39 OCT 87 RFOSR-TR-88-6228 F49929-85-C-8i47...r ’ r y ... : SS f3l~f lJ Photoconductivity - in Graohite Fibers J. Steinbeck , F.Yu, G.Braunstein, G.Dresselhaus, M.S.Dresselhaus and T.VenkaLesan...8217I iFOSR’ 88 - 0228 Photoconductivity in Carbon Fibers J. Steinbeck , F. Yu, G. Braunstein, G. Dresselhaus, M.S. Dresselhaus, Massachusetts Institute

  17. Wide Bandgap Extrinsic Photoconductive Switches

    NASA Astrophysics Data System (ADS)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  18. Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy: Si-doped GaAs

    SciTech Connect

    Schuppler, S.; Adler, D.L.; Pfeiffer, L.N.; West, K.W.; Chaban, E.E.; Citrin, P.H.

    1995-04-15

    Both the type and concentration of point defects responsible for the observed poor electrical activity of highly Si-doped GaAs have been determined using near-edge and extended x-ray-absorption fine structure (NEXAFS and EXAFS). The measurements were made possible using a combination of synchrotron beamline features, fluorescence detection, and GaAs(311){ital A} samples. Because Si can occupy both {ital n}-type Ga and {ital p}-type As sites, the electrical deactivation has generally been attributed to acceptor-Si atoms trapping free-electron carriers. However, the present NEXAFS data directly measure upper limts on the concentration of Si atoms occupying such {ital p}-type As sites, showing that only about half of the observed electrical inactivity is due to this autocompensation mechanism. Identification of the dominant defects responsible for the additionally missing carriers is provided by the EXAFS data, which reveal a comparatively large number of neutral Si{sub Ga}-Si{sub As} dimers and small Si{sub {ital n}} clusters. Implications of these findings and a comparison with local vibrational mode spectroscopy and scanning tunneling microscopy methods are discussed.

  19. Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys

    SciTech Connect

    Samara, G.A.

    1992-01-01

    Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.

  20. Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys

    SciTech Connect

    Samara, G.A.

    1992-10-01

    Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.

  1. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  2. Spatially resolved carrier dynamics in photoconductive switches

    NASA Astrophysics Data System (ADS)

    Feise, Michael Winfried

    Photoconductive switches gated by femtosecond laser pulses are convenient sources of short current pulses and bursts of electromagnetic radiation in the terahertz frequency range. In this work we study the spatio-temporal dynamics of the optically excited charge carriers in photoconductive switches in the framework of a drift-diffusion equation coupled to the Poisson equation to account for screening of the bias field by the carriers. Our treatment explicitly takes into account non-uniformities of the laser excitation spot in the quantum well direction normal to the bias field. Due to the non-uniform carrier density, the screening field varies and the dynamics of the charge carriers become dependent on the location with respect to the center of the excitation spot. We present simulations in relation to spatially resolved luminescence experiments performed by Bieler and coworkers [M. Bieler et al., Appl. Phys. Lett. 77, 1002 (2000).] and obtain very good agreement. We show results of the simulation for photoconductive switches with high quality, wide GaAs quantum wells.

  3. Photoconductive switch enhancements for use in Blumlein pulse generators

    NASA Astrophysics Data System (ADS)

    Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

    1999-06-01

    Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed.

  4. Characterization of III-V Semiconductors.

    DTIC Science & Technology

    1981-04-01

    Epitaxial GaAs by Transient Capacitance ....................... 71 9.5 Persistent Photoconductivity in GaAs: Relationship to Low-Temperature Solar Cell I - V Characteristiss...the DLTS techniqu&. 66 71 __ 9.5 Persistant Photoconductivitv in GaAs:Relationship to Low- Temperature Solar Cell I - V Characteristics The following

  5. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    SciTech Connect

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng; Li, Xiqin; Li, Hongtao; Xiao, Jinshui

    2016-05-15

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  6. Photoconductive dipole antennas for efficient terahertz receiver

    NASA Astrophysics Data System (ADS)

    Nguyen, Truong Khang; Kim, Won Tae; Kang, Bong Joo; Bark, Hyeon Sang; Kim, Kangho; Lee, Jaejin; Park, Ikmo; Jeon, Tae-In; Rotermund, Fabian

    2017-01-01

    We designed various photoconductive antennas applicable to efficient terahertz (THz) receivers and experimentally investigated their detection characteristics. Three different antennas based on Grischkowsky (H-), I-, and bowtie shapes were fabricated on a 1.2-μm-thick low-temperature GaAs layer that was grown on a semi-insulating GaAs substrate and subsequently attached to extended hemispherical silicon lenses. The experimental results showed different characteristics for detection responsivity and agreed well with the theoretical prediction. Measurements of the peak-to-peak amplitudes of the detected THz photocurrent were approximately 67, 42, and 59 nA for the H-shaped, I-shaped, and bowtie-shaped antennas, respectively. The I- and bowtie-shaped antennas provided higher THz detection sensitivities than the H-shaped antenna in the low-frequency region, i.e., below 0.6 THz. At a frequency of 0.2 THz, the I- and bowtie-shaped antennas offered an approximately 3.6-fold and 6-fold enhancement, respectively, in THz detection sensitivity compared to the H-shaped antenna. The bowtie-shaped antenna produced better peak amplitude and a wider spectral bandwidth than the I-shaped antenna. The observed detection peak frequencies of the I-shaped and bowtie-shaped antennas possessing very long dipole arms indicate that the lowest limit of the frequency detected in a typical THz-TDS using a GaAs photoconductive antenna as emitter/detector is around 0.2 THz.

  7. Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Dib, Elias; Bescond, Marc; Cavassilas, Nicolas; Michelini, Fabienne; Raymond, Laurent; Lannoo, Michel

    2013-08-01

    Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we compare current characteristics of Si, Ge, and GaAs p-type double-gate transistors. Electronic properties are analyzed as a function of (i) transport orientation, (ii) channel material, and (iii) gate length. We first show that ⟨100⟩-oriented devices offer better characteristics than their ⟨110⟩-counterparts independently of the material choice. Our results also point out that the weaker impact of scattering in Ge produces better electrical performances in long devices, while the moderate tunneling effect makes Si more advantageous in ultimately scaled transistors. Moreover, GaAs-based devices are less advantageous for shorter lengths and do not offer a high enough ON current for longer gate lengths. According to our simulations, the performance switching between Si and Ge occurs for a gate length of 12 nm. The conclusions of the study invite then to consider ⟨100⟩-oriented double-gate devices with Si for gate length shorter than 12 nm and Ge otherwise.

  8. Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

    NASA Astrophysics Data System (ADS)

    Lutsev, L. V.; Pavlov, V. V.; Usachev, P. A.; Astretsov, A. A.; Stognij, A. I.; Novitskii, N. N.

    2012-12-01

    Negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in the avalanche regime. Light with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap. This suppresses the avalanche feedback and causes a reduction of the current flowing through the SiO2(Co)/GaAs heterostructure.

  9. Photoconductivity in Dirac materials

    SciTech Connect

    Shao, J. M.; Yang, G. W.

    2015-11-15

    Two-dimensional (2D) Dirac materials including graphene and the surface of a three-dimensional (3D) topological insulator, and 3D Dirac materials including 3D Dirac semimetal and Weyl semimetal have attracted great attention due to their linear Dirac nodes and exotic properties. Here, we use the Fermi’s golden rule and Boltzmann equation within the relaxation time approximation to study and compare the photoconductivity of Dirac materials under different far- or mid-infrared irradiation. Theoretical results show that the photoconductivity exhibits the anisotropic property under the polarized irradiation, but the anisotropic strength is different between 2D and 3D Dirac materials. The photoconductivity depends strongly on the relaxation time for different scattering mechanism, just like the dark conductivity.

  10. Photoconductive switch package

    DOEpatents

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  11. Photoconductive switch package

    DOEpatents

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  12. Experiments on Photoconductivity

    ERIC Educational Resources Information Center

    Kraftmakher, Yaakov

    2012-01-01

    Computer-assisted experiments with CdS and CdSe photoresistors are described. The most important characteristics of the photoresistors are determined: (i) the spectral response, (ii) the photocurrent versus incident radiant power, (iii) the rise and decay time constants and (iv) the frequency response to modulated light. The photoconductivity gain…

  13. Experiments on Photoconductivity

    ERIC Educational Resources Information Center

    Kraftmakher, Yaakov

    2012-01-01

    Computer-assisted experiments with CdS and CdSe photoresistors are described. The most important characteristics of the photoresistors are determined: (i) the spectral response, (ii) the photocurrent versus incident radiant power, (iii) the rise and decay time constants and (iv) the frequency response to modulated light. The photoconductivity gain…

  14. Silicon Carbide Photoconductive Switches

    DTIC Science & Technology

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical...and the bandgap was determined to be approximately 3.1 eV. 6H-SiC, Photoconductive, Photovoltaic, Absorption coefficient, Switch, Silicon carbide

  15. Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures.

    PubMed

    Kondratenko, Serhiy V; Iliash, Sviatoslav A; Vakulenko, Oleg V; Mazur, Yuriy I; Benamara, Mourad; Marega, Euclydes; Salamo, Gregory J

    2017-12-01

    An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.

  16. Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures

    NASA Astrophysics Data System (ADS)

    Kondratenko, Serhiy V.; Iliash, Sviatoslav A.; Vakulenko, Oleg V.; Mazur, Yuriy I.; Benamara, Mourad; Marega, Euclydes; Salamo, Gregory J.

    2017-03-01

    An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.

  17. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  18. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    SciTech Connect

    ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

    2000-05-30

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently

  19. Optically activated GaAs MMIC switch for microwave and millimeter wave applications

    NASA Astrophysics Data System (ADS)

    Paolella, Arthur C.; Madjar, Asher; Herczfeld, Peter R.; Sturzebecher, Dana

    1991-03-01

    Optical control of microwave devices particularly MMIC is a rapidly growing research area. The GaAs MESFET is the prime candidate as the optical detector for MMIC applications. In this paper a theoretical analysis is presented which predicts the photoresponse in the MESFET. The analysis includes both internal and external photovoltaic and photoconductive effects. The paper also describes the operation of an optically activated GaAs MMIC switch using GaAs MESFET as the optical detector.

  20. Evolution of THz impulse imaging radar to 1550nm photoconductive switches

    NASA Astrophysics Data System (ADS)

    Brown, E. R.; Zhang, W.-D.; Feldman, A.; Harvey, T.; Mirin, R. P.; Sung, S.; Grundfest, W. S.; Taylor, Z. D.

    2016-05-01

    We present measurements of sub-bandgap photoconductivity and photoconductive switches using GaAs doped heavily with Er such that nanoparticles of ErAs are formed. In addition to strong resonant absorption centered around 1550 nm, the material provides strong sub-bandgap photoconductivity and >> μW average power levels when fabricated into an efficient (square spiral) THz antenna and driven by a 1550- nm ultrafast fiber laser. Photo-Hall measurements prove that the predominant photocarrier is the electron and the linearity of the 1550-nm photocurrent (with laser power) suggests that the photoconductivity is "extrinsic", not other possible mechanisms, such as two-photon absorption. These results have immediate relevance to the use of GaAs:Er switches as the transmitter in 1550-nm-driven THz imaging systems such as the "impulse imager" that we have successfully used for biomedical imaging applications.

  1. Negative Terahertz Photoconductivity in 2D Layered Materials.

    PubMed

    Lu, Junpeng; Liu, Hongwei; Sun, Jing

    2017-09-13

    The remarkable specialties of 2D layered materials like the wide spectral coverage, high strength and great flexibility endow ultrathin 2D layered materials the potential to meet the criteria of next generation optoelectronic devices. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. Different to the traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity. This opens a new avenue for designing novel optoelectronic devices. Deep understanding of the fundamentals in this anomalous response is important for design and optimization of devices. In this review, we provide an overview into the observation of negative photoconductivity in 2D layered materials including graphene, topological insulators and transitional mental dichalcogenides. We also summarize the recent reports about the investigations of the fundamental mechanism using ultrafast terahertz spectroscopies. Finally, we conclude the review by discussing the existing challenges and proposing the possible prospects of this research direction. © 2017 IOP Publishing Ltd.

  2. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    SciTech Connect

    Aoki, T. Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-21

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  3. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.; Kressel, H.

    1977-01-01

    Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.

  4. Triggering GaAs lock-on switches with laser diode arrays

    NASA Astrophysics Data System (ADS)

    Loubriel, G. M.; Helgeson, W. D.; McLaughlin, D. L.; Omalley, M. W.; Zutavern, F. J.; Rosen, A.; Stabile, P. J.

    Many of the applications that require the unique capabilities of Photoconductive Semiconductor Switches (PCSS) demand a compact package. We have been able to demonstrate that GaAs switches operated in the high gain mode called lock-on meet the required electrical switching parameters of several such applications using small switch sizes. The only light source that has enough power to trigger a PCSS and is compatible with a small package is a laser diode. This paper will describe the progress that leads to the triggering of high power PCSS switches with laser diodes. Our goal is to switch up to 5 kA in a single shot mode and up to 100 MW repetitively at up to 10 kHz. These goals are feasible since the switches can be used in parallel or in series. Low light level triggering became possible after the discovery of a high electric field, high gain switching mode in GaAs (and later in InP). At electric fields below 3 kV/cm GaAs switches are activated by creation of, at most, only one conduction electron-valence hole pair per photon absorbed in the sample. This linear mode demands high laser power and, after the light is extinguished, the carriers live for only a few nanoseconds. At higher electric fields GaAs behaves as a light activated Zener diode. The laser light generates carriers as in the linear mode and the field induces gain such that the amount of light required to trigger the switch is reduced by a factor of up to 500. The gain continues until the field across the sample drops to a material dependent lock-on field. At this point the switch will carry as much current as, and for as long as, the circuit can maintain the lock-on field. The gain in the switch allows for the use of laser diodes.

  5. Triggering GaAs lock-on switches with laser diode arrays

    SciTech Connect

    Loubriel, G.M.; Helgeson, W.D.; McLaughlin, D.L.; O'Malley, M.W.; Zutavern, F.J. ); Rosen, A.; Stabile, P.J. )

    1990-01-01

    Many of the applications that require the unique capabilities of Photoconductive Semiconductor Switches (PCSS) demand a compact package. We have been able to demonstrate that GaAs switches operated in the high gain mode called lock-on'' meet the required electrical switching parameters of several such applications using small switch sizes. The only light source that has enough power to trigger a PCSS and is compatible with a small package is a laser diode. This paper will describe the progress that leads to the triggering of high power PCSS switches with laser diodes. Our goal is to switch up to 5 kA in a single shot mode and up to 100 MW repetitively at up to 10 kHz. These goals are feasible since the switches can be used in parallel or in series. Low light level triggering became possible after the discovery of a high electric field, high gain switching mode in GaAs (and later in InP). At electric fields below 3 kV/cm GaAs switches are activated by creation of, at most, only one conduction electron- valence hole pair per photon absorbed in the sample. This linear mode demands high laser power and, after the light is extinguished, the carriers live for only a few nanoseconds. At higher electric fields GaAs behaves as a light activated Zener diode. The laser light generates carriers as in the linear mode and the field induces gain such that the amount of light required to trigger the switch is reduced by a factor of up to 500. The gain continues until the field across the sample drops to a material dependent lock-on field. At this point the switch will carry as much current as, and for as long as, the circuit can maintain the lock-on field. The gain in the switch allows for the use of laser diodes. 8 refs., 11 figs.

  6. Paradoxes of photoconductive target and optical control of secondary ion yield

    SciTech Connect

    Rokakh, A. G. Matasov, M. D.

    2010-01-15

    This study of the photoconductivity of semiconductors, in particular, cadmium chalcogenides as materials for targets of vacuum image converters followed the path of overcoming paradoxes. The concepts developed by the classics of photoelectricity also help to understand the paradoxes of the new secondary-ion photoelectric effect, especially, its spectral characteristic. The optical channel of secondary ion yield control via a photoconductive target opens the way to a new branch of nanotechnology, i.e., optoionics.

  7. Coherent and incoherent terahertz beams measured from a terahertz photoconductive antenna

    SciTech Connect

    Ho Wu, Dong; Graber, Benjamin; Kim, Christopher; Qadri, S. B.; Garzarella, Anthony

    2014-02-03

    We have systematically measured and analyzed the terahertz beams of a photoconductive antenna fabricated on a GaAs substrate. Our data indicate that the antenna produces both coherent and incoherent terahertz beams. The former is produced largely by the plasmon, and the latter is believed to be due to the black body radiation resulting from the thermal excitations and Joule heating by both the femto-second laser and the bias voltage, applied across the electrodes of the antenna. The terahertz-beam property is greatly affected by the operating condition of the photoconductive antenna.

  8. Simulated optimum gate and encapsulant properties for a refractory gate GaAs metal-semiconductor field effect transistor during annealing

    SciTech Connect

    Kitajo, S.; Kanamori, M.

    1993-03-01

    The stress distribution in a refractory gate GaAs substrate during annealing was calculated by computer simulation, using the finite element method. Simulations were used to investigate the correlation between the thermal expansion coefficient of the gate and the encapsulant internal stress. The condition in which minimum or no dislocations were induced into the GaAs substrate were studied. It was demonstrate that the best thermal expansion coefficient value of the gate was close to the value that was reported for tungsten. It was concluded that, by controlling the encapsulant thermal stress of SiO{sub 2} or SiN encapsulant, during high temperature annealing, a dislocation-free GaAs substrate could be obtained. 6 refs., 6 figs., 1 tab.

  9. Fast Photoconductive Responses in Organometal Halide Perovskite Photodetectors.

    PubMed

    Wang, Fei; Mei, Jingjing; Wang, Yunpeng; Zhang, Ligong; Zhao, Haifeng; Zhao, Dongxu

    2016-02-03

    Inorganic semiconductor-based photodetectors have been suffering from slow response speeds, which are caused by the persistent photoconductivity of semiconductor materials. For realizing high speed optoelectronic devices, the organometal halide perovskite thin films were applied onto the interdigitated (IDT) patterned Au electrodes, and symmetrical structured photoconductive detectors were achieved. The detectors were sensitive to the incident light signals, and the photocurrents of the devices were 2-3 orders of magnitude higher than dark currents. The responsivities of the devices could reach up to 55 mA W(1-). Most importantly, the detectors have a fast response time of less than 20 μs. The light and bias induced dipole rearrangement in organometal perovskite thin films has resulted in the instability of photocurrents, and Ag nanowires could quicken the process of dipole alignment and stabilize the photocurrents of the devices.

  10. Optically-Activated GaAs Switches for Ground Penetrating Radar and Firing Set Applications

    SciTech Connect

    Aurand, J.; Brown, D.J.; Carin, L.; Denison, G.J.; Helgeson, W.D.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Rinehart, L.F.; Zutavern, F.J.

    1999-07-14

    Optically activated, high gain GaAs switches are being tested for many different applications. TWO such applications are ground penetrating radar (GPR) and firing set switches. The ability of high gain GaAs Photoconductive Semiconductor Switches (PCSs) to deliver fast risetime pulses makes them suitable for their use in radars that rely on fast impulses. This type of direct time domain radar is uniquely suited for the detection of buried items because it can operate at low frequency, high average power, and close to the ground, greatly increasing power on target. We have demonstrated that a PCSs based system can be used to produce a bipolar waveform with a total duration of about 6 ns and with minimal ringing. Such a pulse is radiated and returns from a 55 gallon drum will be presented. For firing sets, the switch requirements include small size, high current, dc charging, radiation hardness and modest longevity. We have switched 1 kA at 1 kV and 2.8 kA at 3 kV dc charge.

  11. Triggering GaAs lock-on switches with laser diode arrays

    SciTech Connect

    Loubriel, G.M.; Buttram, M.T.; Helgeson, W.D.; McLaughlin, D.L.; O'Malley, M.W.; Zutavern, F.J. ); Rosen, A.; Stabile, P.J. )

    1990-01-01

    Laser diode arrays have been used to trigger GaAs Photoconducting Semiconductor Switches (PCSS) charged to voltages of up to 60 kV and conducting currents of 580 A. The driving forces behind the use of laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays can trigger GaAs at high fields as the result of a new switching mode (lock-on) with very high carrier number gain. We have achieved switching of up to 10 MW in a 60 {Omega} system, with a pulse rise time of 500 ps. At 1.2 MW we have achieved repetition rates of 1 kHz with switch rise time of 500 ps for 10{sup 5} shots. The laser diode array used for these experiments delivers a 166 W pulse. In a single shot mode we have switched 4 kA with a flash lamp pumped laser and 600 A with the 166 W array. 7 refs., 5 figs.

  12. The use of optically triggered, high gain GaAs switches for UWB pulse generation

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; O`Malley, M.W.; Gallegos, R.R.; Helgeson, W.D.

    1994-04-01

    A high peak power impulse pulser that is controlled with high gain, optically triggered GaAs Photoconductive Semiconductor Switches (PCSS) has been constructed and tested. The system has a short 50 {Omega} line that is charged to 100 kV and discharged through the switch when the switch is triggered with as little as 90 nJ of laser energy. The laser that is used is a small laser diode array whose output is delivered through a fiber to the switch. The current in the system ranges from 1 kA (with one laser) to 1.3 kA (with two) and the pulse widths are 1.9 and 1.4 ns, respectively. The peak power and the energy delivered to the load are 50 MW to 84 MW and 95 NJ to 120 mJ for one or two lasers. The small trigger energy and switch jitter are due to a high gain switching mechanism in GaAs. This experiment also shows a relationship between the rise time of the voltage across the switch and the required trigger energy and switch jitter.

  13. Silicon carbide photoconductive switches

    NASA Astrophysics Data System (ADS)

    Saddow, Stephen E.

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical photoconductive (PC) switches. Both photovoltaic and photoconductive effects are reported, which were observed on switches using both geometries and measured at several wavelengths near the 6H-SiC absorption edge. PC techniques were employed to measure the surface and bulk carrier lifetimes of 40 and 200 ns, respectively. The switches displayed a high-speed photovoltaic response to picosecond laser excitations in the UV and visible spectral regions. In particular, efficient subnanosecond optical absorption processes were observed in the visible region. The photovoltage was measured as a function of both laser wavelength (and hence absorption depth) and laser beam position within the switching gap. The switch response to picosecond laser pulses in the UV, violet, green, and red spectral regions was shown to have subnanosecond photovoltaic response times. Finally, since the optical absorption coefficient had not been well established for device-grade 6H-SiC, the optical absorption coefficient near the 6H-SiC bandgap energy (Eg) was also measured, and the bandgap was determined to be approximately 3.1 eV.

  14. Silicon photodiodes with high photoconductive gain at room temperature.

    PubMed

    Li, X; Carey, J E; Sickler, J W; Pralle, M U; Palsule, C; Vineis, C J

    2012-02-27

    Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

  15. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  16. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    NASA Astrophysics Data System (ADS)

    Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-01

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  17. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

    NASA Astrophysics Data System (ADS)

    Gmitra, Martin; Fabian, Jaroslav

    2016-10-01

    We employ first-principles techniques tailored to properly describe semiconductors (semilocal exchange potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at the zone center, by fitting the spin splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms—third-order polynomials. We also determine the orientations of the spin-orbit vector fields (for conduction bands) and the average spins (valence bands) in the momentum space. We describe the dependence of the spin-orbit parameters on the cation and anion atomic weights. These results should be useful for spin transport, spin relaxation, and spin optical orientation modeling of semiconductor heterostructures, as well as for realistic studies of semiconductor-based Majorana nanowires, for which accurate values of spin-orbit couplings are needed.

  18. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Doping inhomogeneities and behavior of compensation of n-type GaAs and InP

    NASA Astrophysics Data System (ADS)

    Wruck, D.; Knauer, A.

    1988-11-01

    A comparison was made of the distributions of Sn and of the chalcogens S and Se in InP and GaAs, determined from infrared absorption and the Hall effect. An analysis was made of the possible cause of the difference between the values of the degree of compensation determined by the two methods.

  19. Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

    NASA Astrophysics Data System (ADS)

    Ok, InJo; Kim, H.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Garcia, Domingo; Majhi, Prashant; Lee, Jack C.

    2008-05-01

    In this work, we studied the effects of postdeposition anneal (PDA) time and Si interface passivation layer on the material and electrical characteristics of the metal-oxide-semiconductor (MOS) capacitor with high-k (HfO2) material on different orientation substrates with (100), (110), and (311). The interfacial change of HfO2/Si /GaAs gate stacks after PDA has been characterized using x-ray photoelectron spectroscopy (XPS) and Dit measurement using conductance method and frequency dispersion. XPS measurement shows the formation of gallium and arsenic oxides with increasing annealing temperature. Unoxidized Si and gallium and arsenic oxides formation in the interface might act as traps. Self-aligned MOS field effect transistors using PDA at 600°C and post-metal-annealing at 800°C have also been fabricated and characterized. The (100) substrate has lower density of interface traps and higher mobility due to reduced Ga2O3 formation.

  20. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  1. Photoconductive detectors with fast temporal response for laser produced plasma experiments.

    PubMed

    May, M J; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-10-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires x-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different x-ray sensitive photoconductive detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using x-ray radiation from a synchrotron radiation source are presented.

  2. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments

    SciTech Connect

    M. J. May, C. Halvorson, T. Perry, F. Weber, P. Young, C. Silbernagel

    2008-06-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different Xray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  3. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments.

    SciTech Connect

    May, M; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-05-06

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different X-ray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  4. Two-dimensional time dependent modeling of optically switched GaAs

    SciTech Connect

    Stout, P.J.; Kushner, M.J.

    1994-12-31

    The advantages of high power photoconductive semiconductor switches (PCSS) such as high hold-off voltage and fast rise times have motivated significant development efforts. However, observations of lock-on, non-uniformities in the electric field, and filamentation of current flow across the device when switching at high fields have raised concerns about the scaling of PCSS to higher currents. To investigate these issues, a two dimensional time dependent computer model of GaAs PCSS has been developed with the motivation of understanding filament formation. The model solves the continuity equations for electrons and holes, conservation equations for trapping sites, the energy equation for the lattice. Poisson`s equation, and a circuit equation. Physical effects in the model include band-to-band impact ionization, trap impact ionization, photoionization, and negative differential resistance. The physical devices investigated with the model are based on the Bulk Optical Semiconductor Switch (BOSS) developed by Schoenbach. In this talk a description of the model will be presented followed by consequences of switch geometries, gain mechanisms, and non-uniform injection and illumination on the operation of the device.

  5. Simulations of terahertz pulse emission from thin-film semiconductor structures

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey

    The photo-Dember effect is the formation of transient electric dipoles due to the interaction of semiconductors with ultrashort optical pulses. Typically the optically-induced dipole moments vary on the ns- or ps- scales, leading to the emission of electromagnetic pulses with terahertz (THz) bandwidths. One of the applications of the photo-Dember effect is a photoconductive dipole antenna (PDA). This work presents a computational model of a PDA based on Maxwell's equations coupled to the Boltzmann transport equation. The latter is solved semiclassically for the doped GaAs using a continuum approach. The emphasis is on the accurate prediction of the emitted THz pulse shape and bandwidth, particularly when materials are doped with a rare-earth metal such as erbium or terbium that serve as carrier recombination centers. Field-dependent carrier mobility is determined from particle-based simulations. Some of the previous experimental results are used as a basis for comparison with our model.

  6. Engineering Dilute Nitride Semiconductor Alloys for Intermediate Band Solar Cells

    NASA Astrophysics Data System (ADS)

    Luce, Alexander Vallejo

    The growth and characterization of GaAs nanowires and GaNPAs thin-films is discussed within the context of finding a material system that is suitable as an intermediate band solar cell (IBSC) absorber. The IBSC is an attractive concept proposed to exceed the Shockley-Queisser detailed balance limit for photovoltaic efficiency. These solar cells have an additional intermediate band, allowing for the absorption of below bandgap photons, thus resulting in an increase in photocurrent and higher efficiency. Suitable materials systems for the implementation of the IBSC concept, however, are presently lacking. Recent work on the highly-mismatched alloy (HMA) GaAsN has shown that the unique features of the electronic band structure demonstrate optical activity of three energy bands and have led to the realization of a proof-of-concept IBSC. GaAsN, however, is not without shortcomings. Another HMA material, GaNPAs, which offers a wide range of bandgap tunability and is better matched to the solar spectrum is proposed. This work covers the optical characterization of both GaAs nanowires and GaAsPN using traditional visible-light semiconductor characterization techniques including optical absorption spectroscopy, photo-modulated reflectance, steady-state photoluminescence, and spectral photoconductivity. Additionally, photovoltaic devices based on GaNPAs are demonstrated and assessed as potential IBSCs.

  7. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Multilayer CrPtCr/NiAu ohmic contacts with p-type GaAs in heterojunction laser structures

    NASA Astrophysics Data System (ADS)

    Wójcik, I.; Stareev, G.; Barcz, A.; Domański, M.

    1988-11-01

    Multilayer CrPtCr/NiAu metallization was deposited by sputtering in a magnetron on the p-type side of GaAs in a pulsed laser heterostructure. Heat treatment at 490 °C for 3 min produced a reliable ohmic contact with a specific resistance of 10- 6-10- 5 Ω · cm2, depending on the substrate doping. Secondary-ion mass spectroscopy and Rutherford backscattering methods were used to study the mechanism of formation of a contact.

  8. InP:Fe photoconducting device

    DOEpatents

    Hammond, R.B.; Paulter, N.G.; Wagner, R.S.

    A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

  9. InP:Fe Photoconducting device

    DOEpatents

    Hammond, Robert B.; Paulter, Nicholas G.; Wagner, Ronald S.

    1984-01-01

    A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

  10. Microlensless interdigitated photoconductive terahertz emitters.

    PubMed

    Singh, Abhishek; Prabhu, S S

    2015-01-26

    We report here fabrication of interdigitated photoconductive antenna (iPCA) terahertz (THz) emitters based on plasmonic electrode design. Novel design of this iPCA enables it to work without microlens array focusing, which is otherwise required for photo excitation of selective photoconductive regions to avoid the destructive interference of emitted THz radiation from oppositely biased regions. Benefit of iPCA over single active region PCA is, photo excitation can be done at larger area hence avoiding the saturation effect at higher optical excitation density. The emitted THz radiation power from plasmonic-iPCAs is ~2 times more than the single active region plasmonic PCA at 200 mW optical excitation, which will further increase at higher optical powers. This design is expected to reduce fabrication cost of photoconductive THz sources and detectors.

  11. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOEpatents

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  12. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part 1. GaAs and GaSb

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-23

    The role of the inert gas additive (He, Ar, Xe) to C12 Inductively Coupled Plasmas for dry etching of GaAs and GaSb was examined through the effect on etch rate, surface roughness and near-surface stoichiometry. The etch rates for both materials go through a maximum with Clz 0/0 in each type of discharge (C12/'He, C12/Ar, C12/Xc), reflecting the need to have efficient ion-assisted resorption of the etch products. Etch yields initially increase strongly with source power as the chlorine neutral density increases, but decrease again at high powers as the etching becomes reactant-limited. The etched surfaces are generally smoother with Ax or Xe addition, and maintain their stoichiometry.

  13. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  14. DX centers in III-V semiconductors under hydrostatic pressure

    SciTech Connect

    Wolk, Jeffrey Alan

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the SiGa shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  15. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOEpatents

    Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  16. Optically thin hybrid cavity for terahertz photo-conductive detectors

    DOE PAGES

    Thompson, Robert J.; Siday, T.; Glass, S.; ...

    2017-01-23

    Here, the efficiency of photoconductive (PC) devices, including terahertz detectors, is constrained by the bulk optical constants of PC materials. Here, we show that optical absorption in a PC layer can be modified substantially within a hybrid cavity containing nanoantennas and a Distributed Bragg Reflector. We find that a hybrid cavity, consisting of a GaAs PC layer of just 50 nm, can be used to absorb >75% of incident photons by trapping the light within the cavity. We provide an intuitive model, which describes the dependence of the optimum operation wavelength on the cavity thickness. We also find that themore » nanoantenna size is a critical parameter, small variations of which lead to both wavelength shifting and reduced absorption in the cavity, suggesting that impedance matching is key for achieving efficient absorption in the optically thin hybrid cavities.« less

  17. Photoconductive switching for HPM (high power microwave) generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-01-01

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in <200 ps using laser triggered, 1 {times} 5 {times} 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere. 11 refs., 2 figs., 1 tab.

  18. Photoconductive switching for HPM (High Power Microwave) generation

    NASA Astrophysics Data System (ADS)

    Pocha, M. D.; Hofer, W. W.

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in less than 200 ps using laser triggered, 1 x 5 x 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere.

  19. Optically thin hybrid cavity for terahertz photo-conductive detectors

    NASA Astrophysics Data System (ADS)

    Thompson, R. J.; Siday, T.; Glass, S.; Luk, T. S.; Reno, J. L.; Brener, I.; Mitrofanov, O.

    2017-01-01

    The efficiency of photoconductive (PC) devices, including terahertz detectors, is constrained by the bulk optical constants of PC materials. Here, we show that optical absorption in a PC layer can be modified substantially within a hybrid cavity containing nanoantennas and a Distributed Bragg Reflector. We find that a hybrid cavity, consisting of a GaAs PC layer of just 50 nm, can be used to absorb >75% of incident photons by trapping the light within the cavity. We provide an intuitive model, which describes the dependence of the optimum operation wavelength on the cavity thickness. We also find that the nanoantenna size is a critical parameter, small variations of which lead to both wavelength shifting and reduced absorption in the cavity, suggesting that impedance matching is key for achieving efficient absorption in the optically thin hybrid cavities.

  20. Difference Between Far-Infrared Photoconductivity Spectroscopy and Absorption Spectroscopy: Theoretical Evidence of the Electron Reservoir Mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, Tadashi; Fujita, Maho; Uchida, Tomohisa; Hiraiwa, Nobuyoshi; Fukuda, Taturo; Koizumi, Hideki; Zhang, Chao

    2013-08-01

    The intriguing difference between far-infrared photoconductivity spectroscopy and absorption spectroscopy in the measurement of the magnetoplasmon frequency in GaAs quantum wells reported by Holland et al. [Phys. Rev. Lett. 93, 186804 (2004)] remains unexplained to date. This Letter provides a consistent mechanism to solve this puzzle. The mechanism is based on the electron reservoir model for the integer quantum Hall effect in graphene [Phys. Lett. A 376, 616 (2012)]. We predict sharp kinks to appear in the magnetic induction dependence of the magnetoplasmon frequency at very low temperatures such as 14 mK in the same GaAs quantum well sample used by Holland et al..

  1. Ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires probed by terahertz spectroscopy

    PubMed Central

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-01-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1−x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices. PMID:27263861

  2. Photoconductive detection of hydrogen in ZnO and rutile TiO2

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Mchedlidze, T.; Herklotz, F.

    2016-08-01

    Hydrogen donors in ZnO and rutile TiO2 are probed by means of photoconductivity and IR absorption. It is shown that the O-H bonds giving rise to the local vibrational modes (LVMs) of interstitial hydrogen at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively, also occur in the photoconductivity spectra as Fano resonances. The effects of isotope substitution, concentration, sample thickness, influence of other donors present in both oxides are considered. Based on the shape and frequency of these resonances, it is concluded that the apparent ionization energy of interstitial hydrogen in rutile TiO2 is less than 300 meV. By a direct comparison, we also demonstrate that photoconductive detection of LVMs of defects in thin semiconductor films is superior to the standard IR absorption.

  3. Photoconductive detection of hydrogen in ZnO and rutile TiO{sub 2}

    SciTech Connect

    Lavrov, E. V. Mchedlidze, T.; Herklotz, F.

    2016-08-07

    Hydrogen donors in ZnO and rutile TiO{sub 2} are probed by means of photoconductivity and IR absorption. It is shown that the O–H bonds giving rise to the local vibrational modes (LVMs) of interstitial hydrogen at 3611 and 3290 cm{sup −1} in the case of ZnO and TiO{sub 2}, respectively, also occur in the photoconductivity spectra as Fano resonances. The effects of isotope substitution, concentration, sample thickness, influence of other donors present in both oxides are considered. Based on the shape and frequency of these resonances, it is concluded that the apparent ionization energy of interstitial hydrogen in rutile TiO{sub 2} is less than 300 meV. By a direct comparison, we also demonstrate that photoconductive detection of LVMs of defects in thin semiconductor films is superior to the standard IR absorption.

  4. High voltage photoconductive switch package

    SciTech Connect

    Caporaso, George J.

    2016-11-22

    A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

  5. Directly tailoring photon-electron coupling for sensitive photoconductance.

    PubMed

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-03-11

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics.

  6. Directly tailoring photon-electron coupling for sensitive photoconductance

    PubMed Central

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-01-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics. PMID:26964883

  7. Directly tailoring photon-electron coupling for sensitive photoconductance

    NASA Astrophysics Data System (ADS)

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-03-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics.

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  9. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    SciTech Connect

    Aoki, Takeshi Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-15

    This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  10. Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength

    NASA Astrophysics Data System (ADS)

    Abdulmunem, O. M.; Hassoon, K. I.; Völkner, J.; Mikulics, M.; Gries, K. I.; Balzer, J. C.

    2017-01-01

    We investigate the influence of the surface properties of a low-temperature-grown GaAs photoconductive antenna on the terahertz (THz) emission strength, using a specially designed THz time-domain spectroscopy system. The system allows us to excite six different positions along the 10 μm gap of a coplanar stripline antenna with a length of 10 mm without changing the alignment of the optical or THz beam path. A comparison to the surface roughness and the grain size which are extracted from an atomic force and a scanning electron microscope is given.

  11. Optical quenching of photoconductivity in CdSe single nanowires via waveguiding excitation.

    PubMed

    Gu, Fuxing; Wang, Pan; Yu, Huakang; Guo, Bing; Tong, Limin

    2011-05-23

    We demonstrate broadband optical quenching of photoconductivity in CdSe single nanowires with low excitation power. Using 1550-nm-wavelength light with 10-nW power for waveguiding excitation, we observe a typical responsivity of 0.5 A/W for quenching the photoconductivity established by 10-µW 660-nm-wavelength background light in a 403-nm-diameter CdSe nanowire, with detectable limit of the quenching power down to pW level at room temperature, which is several orders of magnitude lower than those reported previously. This large quenching effect originates from the enhanced light-defect interaction in the nanowires via waveguiding excitation. These results open new opportunities for noninvasive characterization of deep-level defect states in low-dimensional semiconductor nanomaterials, and novel optoelectronic applications of semiconductor nanowires such as high-sensitive broadband photodetection.

  12. Persistent photoconductivity effects in printed n-channel organic transistors

    NASA Astrophysics Data System (ADS)

    Nga Ng, Tse; Fujieda, Ichiro; Street, Robert A.; Veres, Janos

    2013-03-01

    Persistent photoconductivity of top-gate n-type organic transistors is investigated. The irradiation of green light leads to a negative shift in transistor threshold voltage and an increase in sub-threshold current. These light-induced effects are enhanced when the gate is negatively biased during the light irradiation, and the recovery process is faster at 60 °C than at 25 °C. After storage in dark, full recovery is obtained for a transistor printed with a neat semiconductor, whereas for the device printed with a solution of the same semiconductor mixed with an insulator, only partial recovery is observed after four days at room temperature. Other stress conditions (irradiation with a positive gate bias, irradiation without bias, and bias under dark) do not change the threshold voltage or the sub-threshold current significantly. We attribute this photo phenomenon to holes trapped and released at the dielectric/semiconductor interface and a smaller number of positive fixed charges generated in the bulk of the semiconductor layer.

  13. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  14. Ion Implanted Gaas Integrated Optics Fabrication Technology

    NASA Astrophysics Data System (ADS)

    Mentzer, M. A.; Hunsperger, R. G.; Bartko, J.; Zavada, J. M.; Jenkinson, H. A.

    1985-01-01

    Ion implantation of semiconductor materials is a fabrication technique that offers a number of distinct advantages for the formation of guided-wave components and microelectronic devices. Implanted damage and dopants produce optical and electronic changes that can be utilized for sensing and signal processing applications. GaAs is a very attractive material for optical fabrication since it is transparent out to the far infrared. It can be used to fabricate optical waveguides, directional couplers, EO modulators, and detectors, as well as other guided wave structures. The presence of free carriers in GaAs lowers the refractive index from that of the pure semiconductor material. This depression of the refractive index is primarily due to the negative contribution of the free carrier plasma to the dielectric constant of the semiconductor. Bombardment of n-type GaAs by protons creates damage sites near the surface of the crystal structure where free carriers are trapped. This "free carrier compensated" region in the GaAs has a higher refractive index than the bulk region. If the compensated region is sufficiently thick and has a refractive index which is sufficiently larger than that of the bulk n-type region, an optical waveguide is formed. In this paper, a description of ion implantation techniques for the fabrication of both planar and channel integrated optical structures in GaAs is presented, and is related to the selection of ion species, implant energy and fluence, and to the physical processes involved. Lithographic technology and masking techniques are discussed for achieving a particular desired implant profile. Finally, the results of a set of ion implantation experiments are presented.

  15. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  16. Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

    NASA Astrophysics Data System (ADS)

    Wu, Qing; Liu, Yu; Wang, Hailong; Li, Yuan; Huang, Wei; Zhao, Jianhua; Chen, Yonghai

    2017-01-01

    In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization.

  17. Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

    PubMed Central

    Wu, Qing; Liu, Yu; Wang, Hailong; Li, Yuan; Huang, Wei; Zhao, Jianhua; Chen, Yonghai

    2017-01-01

    In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization. PMID:28084437

  18. Plasma model of carrier transportation in photoelectric semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Ma, L. Q.; Lu, Q. S.; Du, S. J.

    2006-02-01

    A new model, called the plasma model, describing carrier transportation in photoelectric semiconductor detectors is proposed. Semiconductor material under laser irradiation is regarded as a plasma of low temperature with high carrier density, and it is considered that the carrier temperature is different from the lattice temperature when the irradiating laser power is high but lower than the damage threshold of the detectors. Equations for the carrier density, velocity and temperature are established. According to the model, numerical simulations of a photoconductive semiconductor detector were carried out by programming. The instantaneous change behaviors of the photoconductive detector are obtained. The results of the numerical calculation match well with the experimental results.

  19. Investigation of Optically Induced Avalanching in GaAs

    DTIC Science & Technology

    1989-06-01

    by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

  20. Characterization of GaAs monolithic circuits by optical techniques

    NASA Astrophysics Data System (ADS)

    Hung, H.-L. A.; Lee, T. T.; Polak-Dingels, P.; Chauchard, E.; Webb, K.

    1989-09-01

    Optical techniques for broadband microwave signal generation and detection have been developed to characterize monolithic microwave integrated circuits (MMICs). Emphasis is on the enhancement of measurement accuracy and the identification of limitations. De-embedded complex S-parameters are derived from time-domain data obtained from both a GaAs photoconductive switch and electro-optic sampling of a Ka-band MMIC power amplifier. These parameters are directly compared with those measured from a network analyzer of the same circuit.

  1. Picosecond photoconductive devices for 10 Gbit/s optoelectronic switching

    NASA Astrophysics Data System (ADS)

    Veith, G.

    1985-03-01

    Semiconductor materials with a high density of recombination and trapping centers exhibit extremely short carrier lifetimes in the order of 1 to 100 ps and have been the base for the development of high speed optoelectronic switches. These devices are activated by picosecond laser pulses and can be driven nearly free of jitter with respect to the optical excitation pulses. They show some unique properties as picosecond risetimes and response times and can be operated within a relatively high dynamical range (10-5 to 10 sub 4 V) (0.00001 to 0.0001 V). A review is given on the wide field of possible applications of the ultrafast photoconductive switches. They can be used as photodetectors for picosecond light pulses as well as sampling gates for the characterization of high speed electronic and optoelectronic devices. In some experiments which are discussed more in detail the author demonstrates the capability of this type of photoconductive switches for the generation of picosecond infrared pulse trains in laser diodes and for the generation of high-bit rate electrical codes for use in Gbit/s optical communication and sensing systems, for logical switching and for testing purposes of high speed electronic instrumentations.

  2. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  3. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  4. Carrier heating and negative photoconductivity in graphene

    SciTech Connect

    Heyman, J. N.; Stein, J. D.; Kaminski, Z. S.; Banman, A. R.; Massari, A. M.; Robinson, J. T.

    2015-01-07

    We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density, and mobility of p-type chemical vapor deposition graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35 eV and 1.55 eV, approximately one-half to three times the Fermi energy of the samples. Although interband optical transitions in graphene are blocked for pump photon energies less than twice the Fermi energy, we observe negative photoconductivity at all pump photon energies investigated, indicating that interband excitation is not required to observe this effect. Our results are consistent with a thermalized free-carrier population that cools by electron-phonon scattering, but are inconsistent with models of negative photoconductivity based on population inversion.

  5. Carrier heating and negative photoconductivity in graphene

    NASA Astrophysics Data System (ADS)

    Heyman, J. N.; Stein, J. D.; Kaminski, Z. S.; Banman, A. R.; Massari, A. M.; Robinson, J. T.

    2015-01-01

    We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density, and mobility of p-type chemical vapor deposition graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35 eV and 1.55 eV, approximately one-half to three times the Fermi energy of the samples. Although interband optical transitions in graphene are blocked for pump photon energies less than twice the Fermi energy, we observe negative photoconductivity at all pump photon energies investigated, indicating that interband excitation is not required to observe this effect. Our results are consistent with a thermalized free-carrier population that cools by electron-phonon scattering, but are inconsistent with models of negative photoconductivity based on population inversion.

  6. The DX centers in three to five semiconductors under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Wolk, J. A.

    1992-11-01

    The DX centers are deep level defects found in some 3-5 semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si(sub Ga) shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. The capture barriers from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type 3-5 semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  7. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  8. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  9. Mid-Infrared Photoconductivity in Self-Assembled InAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Berryman, K. W.; Lyon, S. A.; Segev, Mordechai

    1997-03-01

    Observations of mid-infrared photoconductivity in self-assembled InAs quantum dots are observed. The dots, which self-assemble into squat pyramidal shapes approximately 10 nm on a side and 2-3 nm high, are grown using standard molecular beam epitaxy techniques and coherently strained in a matrix of Al_0.3Ga_0.7As which has been grown on a GaAs substrate. Using a variety of cladding structures and dots doped with electrons, normal incidence photoconductivity has been measured at a range of wavelengths in the mid-infrared. Observations at different sample temperatures and applied bias allows discrimination and explanation of different tranistion processes, including excitation of carriers from the ground state of the dots into both excited states and the continuum. Photoluminescence and electroluminescence experiments are in good agreement with the observed optical transitions. The large optical response of these quantum dot samples suggests possible future use as novel mid-infrared detectors. Infrared photoconductivity is investigated for several different dot structures, and the possibility of further optimization of self-assembled quantum dots for both mid-infrared detection and emission will be discussed.

  10. Quantum behavior of terahertz photoconductivity in silicon nanocrystals networks

    NASA Astrophysics Data System (ADS)

    Pushkarev, V.; Ostatnický, T.; Němec, H.; Chlouba, T.; Trojánek, F.; Malý, P.; Zacharias, M.; Gutsch, S.; Hiller, D.; Kužel, P.

    2017-03-01

    Quantum-size effects are essential for understanding the terahertz conductivity of semiconductor nanocrystals, particularly at low temperatures. We derived a quantum mechanical expression for the linear terahertz response of nanocrystals; its introduction into an appropriate effective medium model provides a comprehensive microscopic approach for the analysis of terahertz conductivity spectra as a function of frequency, temperature, and excitation fluence. We performed optical pump-terahertz probe experiments in multilayer Si quantum dot networks with various degrees of percolation at 300 and 20 K and with variable pump fluence (initial carrier density) over nearly three orders of magnitude. Our theoretical approach was successfully applied to quantitatively interpret all the measured data within a single model. A careful data analysis made it possible to assess the distribution of sizes of nanocrystals participating to the photoconduction. We show and justify that such conductivity-weighted distribution may differ from the size distribution obtained by standard analysis of transmission electron microscopy images.

  11. Circuit modeling and performance analysis of photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Prajapati, Jitendra; Bharadwaj, Mrinmoy; Chatterjee, Amitabh; Bhattacharjee, Ratnajit

    2017-07-01

    In recent years, several experimental and simulation studies have been reported on the terahertz (THz) generation using a photoconductive antenna (PCA). The major problem with PCA is its low overall efficiency, which depends on several parameters related to a semiconductor material, an antenna geometry, and characteristics of the laser beam. To analyze the effect of different parameters on PCA efficiency, accurate circuit modeling, using physics undergoing in the device, is necessary. Although a few equivalent circuit models have been proposed in the literature, these models do not adequately capture the semiconductor physics in PCA. This paper presents an equivalent electrical circuit model of PCA incorporating basic semiconductor device physics. The proposed equivalent circuit model is validated using Sentaurus TCAD device level modeling tool as well as with the experimental results available in the literature. The results obtained from the proposed circuit model are in close agreement with the TCAD results as well as available experimental results. The proposed circuit model is expected to contribute towards future research efforts aimed at optimization of the performance of the PCA system.

  12. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  13. Generation of high power pulsed terahertz radiation using a plasmonic photoconductive emitter array with logarithmic spiral antennas

    SciTech Connect

    Berry, Christopher W.; Hashemi, Mohammad R.; Jarrahi, Mona

    2014-02-24

    An array of 3 × 3 plasmonic photoconductive terahertz emitters with logarithmic spiral antennas is fabricated on a low temperature (LT) grown GaAs substrate and characterized in response to a 200 fs optical pump from a Ti:sapphire mode-locked laser at 800 nm wavelength. A microlens array is used to split and focus the optical pump beam onto the active area of each plasmonic photoconductive emitter element. Pulsed terahertz radiation with record high power levels up to 1.9 mW in the 0.1–2 THz frequency range is measured at an optical pump power of 320 mW. The record high power pulsed terahertz radiation is enabled by the use of plasmonic contact electrodes, enhancing the photoconductor quantum efficiencies, and by increasing the overall device active area, mitigating the carrier screening effect and thermal breakdown at high optical pump power levels.

  14. Free-space terahertz radiation from a LT-GaAs-on-quartz large-area photoconductive emitter.

    PubMed

    Bacon, David R; Burnett, Andrew D; Swithenbank, Matthew; Russell, Christopher; Li, Lianhe; Wood, Christopher D; Cunningham, John; Linfield, Edmund H; Davies, A Giles; Dean, Paul; Freeman, Joshua R

    2016-11-14

    We report on large-area photoconductive terahertz (THz) emitters with a low-temperature-grown GaAs (LT-GaAs) active layer fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields, which we attribute to reduced parasitic current in the substrate. Through these improvements, we demonstrate a factor of ~8 increase in emitted THz field strength at the maximum operating voltage. In addition we find improved performance when these devices are used for photoconductive detection, which we explain through a combination of reduced parasitic substrate currents and reduced space-charge build-up in the device.

  15. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Anomalous behaviours of terahertz reflected waves transmitted from GaAs induced by optical pumping

    NASA Astrophysics Data System (ADS)

    Shi, Yu-Lei; Zhou, Qing-Li; Zhao, Dong-Mei; Zhang, Cun-Lin

    2009-12-01

    Femtosecond pump-terahertz probe studies of carrier dynamics in semi-insulating GaAs have been investigated in detail for various pump powers. It is observed that, at high pump powers, the reflection peaks flip to the opposite polarity and dramatically enhance as the pump arrival time approaches the reflected wave of the terahertz pulse. The abnormal polarity-flip and enhancement can be interpreted by the pump-induced enhancement in the photoconductivity of GaAs and half-wave loss. Moreover, the carrier relaxation processes and surface states filling in GaAs are also studied in these measurements.

  16. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  17. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  18. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

    SciTech Connect

    Golovynskyi, S. L. Lavoryk, S. R.; Tarasov, G. G.; Dacenko, O. I.; Kondratenko, S. V.; Mazur, Yu. I.; Wang, Zh. M.; Ware, M. E.; Salamo, G. J.

    2016-05-14

    Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

  19. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  20. Fano resonances in photoconductivity spectra of hydrogen donors in ZnO and rutile

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Herklotz, F.; Weber, J.

    2015-02-01

    The results of photoconductivity studies of hydrogen donors in ZnO and rutile TiO2 are presented. It is shown that local vibrational modes of O-H bonds comprising donors in both semiconductors can be detected in photoconductivity spectra as Fano resonances at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively. The frequencies of these features red-shift in energy down to 2668 (ZnO) and 2445 cm-1 (TiO2) if hydrogen is substituted by deuterium. Based on the frequency of the deuterium resonance it is concluded that the ionization energy of the hydrogen donor in TiO2 is less than 300 meV, which is in variance with predictions of theory. The reasons for such a discrepancy are discussed.

  1. New developments in photoconductive detectors

    SciTech Connect

    Han, S.

    1996-07-01

    Nearly ideal for detecting ionizing radiation, wide bandgap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide bandgap semiconductors have progressed enormously. One particular wide bandgap semiconductor, diamond, has properties which may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films have become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diameter is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond`s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide bandgap semiconductors for ICF diagnostics will be presented.

  2. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  3. Transient terahertz photoconductivity of insulating cuprates

    NASA Astrophysics Data System (ADS)

    Petersen, J. C.; Farahani, A.; Sahota, D. G.; Liang, Ruixing; Dodge, J. S.

    2017-09-01

    We establish a detailed phenomenology of photocarrier transport in the copper oxide plane by studying the transient terahertz photoconductivity of Sr2CuO2Cl2 and YBa2Cu3O6 . The peak photoconductivity saturates with fluence, decays on multiple picosecond timescales, and evolves into a state characterized by activated transport. The time dependence shows little change with fluence, indicating that the decay is governed by first-order recombination kinetics. We find that most photocarriers make a negligible contribution to the dc photoconductivity, and we estimate the intrinsic photocarrier mobility to be 0.6-0.7 cm2/Vs at early times, comparable to the mobility in chemically doped materials.

  4. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  5. Subwavelength Terahertz Imaging of Graphene Photoconductivity

    PubMed Central

    2016-01-01

    Using a spatially structured, optical pump pulse with a terahertz (THz) probe pulse, we are able to determine spatial variations of the ultrafast THz photoconductivity with subwavelength resolution (75 μm ≈ λ/5 at 0.8 THz) in a planar graphene sample. We compare our results to Raman spectroscopy and correlate the existence of the spatial inhomogeneities between the two measurements. We find a strong correlation with inhomogeneity in electron density. This demonstrates the importance of eliminating inhomogeneities in doping density during CVD growth and fabrication for photoconductive devices. PMID:27736073

  6. Negative photoconductivity of InAs nanowires.

    PubMed

    Han, Yuxiang; Zheng, Xiao; Fu, Mengqi; Pan, Dong; Li, Xing; Guo, Yao; Zhao, Jianhua; Chen, Qing

    2016-01-14

    Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs.

  7. Trap-induced photoconductivity in singlet fission pentacene diodes

    SciTech Connect

    Qiao, Xianfeng Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  8. High-energy passively Q-switched operation of Yb:GdCa(4)O(BO(3))(3) laser with a GaAs semiconductor saturable absorber.

    PubMed

    Chen, Xiaowen; Wang, Lisha; Han, Wenjuan; Guo, Yunfeng; Xu, Honghao; Yu, Haohai; Zhang, Huaijin; Liu, Junhai

    2015-11-16

    High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber.

  9. Examination of Temperature Effects on Gate-to-Drain Avalanche Breakdown in GaAs MESFETs (Metal-Semiconductor Field Effect Transistors) by Measuring Light Emission under RF Drive.

    DTIC Science & Technology

    1987-12-01

    and cost perspective. Before GaAs MESFETs are used in satellites and other high reliability systems, their reliability must be demonstrated through...validity of the NTTF calculations at test temperatures were raised. To gain increased confidence in the reliability of these devices, the Jet Propulsion...device. Three significant contributions to these factors were measured. Referring to Figure 3.5 these contributions were: the HTTF rf circuitry losses

  10. Persistant photoconductivity of strontium titanate

    NASA Astrophysics Data System (ADS)

    Poole, Violet Mary

    Strontium titanate (SrTiO3) is a transparent conducting oxide with a range of interesting properties, including a large, temperature-dependent dielectric constant and superconductivity at low temperatures. It has a wide indirect band gap of 3.2 eV at room temperature. Annealing in a reducing atmosphere with additional strontium oxide (SrO) powder at 1200°C results in the creation of native defects. These annealed samples show persistent photoconductivity (PPC) at room temperature, when exposed to light of energy 2.9 eV or greater. The three or more order of magnitude change in resistance persists long after the light is turned off. This effect is attributed to an electron being excited from an acceptor defect, with a large barrier for recapture, to the conduction band. This work investigates many of the changes that occur and factors that affect PPC. The right amount of SrO powder is crucial to the formation of PPC. The presence of some oxygen vacancies is also necessary for PPC; however, too many will mute the dramatic change in resistivity. Peaks at 430 nm and 520 nm appear in the visible region of the spectrum. The peak at 430 nm is due to iron, while the peak at 520 nm has not been identified. The infrared region of the spectrum also shows changes. First, the intensity of the transmitted signal drops significantly after light exposure, due to free carrier absorption. Additionally, a hydrogen line at 3500 cm-1 and satellites are often observed in as-received samples. The satellites disappear during annealing and return during PPC. The hydrogen lines have the same thermal kinetics as the 520 nm peak. Hydrogen lines at 3355 and 3384 cm-1, if present, will prevent PPC. An exposed chip can be erased (i.e. returned to its pre-light exposed state) by using a heat treatment. Erasing and polishing an annealed chip prior to light exposure can result in weakly p-type behavior with high mobility holes ( > 100 cm2/Vs). This is an order of magnitude higher than those

  11. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  12. GaAs quantum well structures investigation by local cathodoluminescence

    NASA Astrophysics Data System (ADS)

    Shakhmin, A. A.; Zamoryanskaya, M. V.; Arsentyev, I. N.; Konnikov, S. G.; Vinokurov, D. A.; Stankevich, A. L.; Tarasov, I. S.

    2009-04-01

    The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures.

  13. Dember and photo-electromotive-force currents in silicon photoconductive detectors

    NASA Astrophysics Data System (ADS)

    Dikmelik, Yamaç; Davidson, Frederic M.

    2004-09-01

    Dember and photo-electromotive-force (PEMF) currents are investigated in silicon photoconductive detectors both theoretically and experimentally. Dember photocurrents were found to dominate the response of high-purity silicon samples with top-surface electrodes to a moving interference pattern. The use of surface electrodes leads to shadowed regions beneath the electrodes, and Dember photocurrents appear under short-circuit conditions. A single-charge-carrier model of the Dember effect is in good qualitative agreement with experimental results. We also show theoretically that the PEMF effect in silicon is weak compared with other semiconductors because of its relatively high intrinsic conductivity.

  14. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  15. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  16. Photoconductive response of compensating impurities in photothermal ionization spectroscopy of high-purity silicon and germanium

    SciTech Connect

    Darken, L.S.; Hyder, S.A.

    1983-04-15

    In photothermal ionization spectroscopy both positive and negative photoconductivity responses have been reported from compensating centers neutralized by minority carriers generated by band-edge light. Here, the response of compensating impurities in both n-type and p-type high-purity (Vertical BarN/sub A/-N/sub D/Vertical Bar roughly-equal10/sup 10/--10/sup 12/ cm/sup -3/) nuclear-detector-grade silicon and germanium is reported. Negative photoconductive responses from compensating impurities were observed only when the distance the photothermally generated majority carriers traveled before recapture by shallow levels was longer than the sample length (contact to contact). We propose that in high-purity semiconductors, such as used in this study, it is the contact configuration that is responsible for the apparent rapid recombination of minority carriers which causes negative minority-carrier photoconductivity. n/sup +/nn/sup +/ or p/sup +/pp/sup +/ structures allow multiple traversals through the sample by only majority carriers. The dependence of the band-edge light generated excess carrier density on applied electric field supports this mechanism.

  17. A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy

    NASA Astrophysics Data System (ADS)

    Joyce, Hannah J.; Boland, Jessica L.; Davies, Christopher L.; Baig, Sarwat A.; Johnston, Michael B.

    2016-10-01

    Accurately measuring and controlling the electrical properties of semiconductor nanowires is of paramount importance in the development of novel nanowire-based devices. In light of this, terahertz (THz) conductivity spectroscopy has emerged as an ideal non-contact technique for probing nanowire electrical conductivity and is showing tremendous value in the targeted development of nanowire devices. THz spectroscopic measurements of nanowires enable charge carrier lifetimes, mobilities, dopant concentrations and surface recombination velocities to be measured with high accuracy and high throughput in a contact-free fashion. This review spans seminal and recent studies of the electronic properties of nanowires using THz spectroscopy. A didactic description of THz time-domain spectroscopy, optical pump–THz probe spectroscopy, and their application to nanowires is included. We review a variety of technologically important nanowire materials, including GaAs, InAs, InP, GaN and InN nanowires, Si and Ge nanowires, ZnO nanowires, nanowire heterostructures, doped nanowires and modulation-doped nanowires. Finally, we discuss how THz measurements are guiding the development of nanowire-based devices, with the example of single-nanowire photoconductive THz receivers.

  18. Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

    NASA Astrophysics Data System (ADS)

    Lambert, Y.; Gao, Y.; Pi, X. D.; Grandidier, B.; Stiévenard, D.

    2017-09-01

    We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of 15% is found for the incorporated P impurities in the NCs.

  19. Gamma ray measurements with photoconductive detectors using a dense plasma focus

    SciTech Connect

    May, M. J. Brown, G. V.; Halvorson, C.; Schmidt, A.; Bower, D.; Tran, B.; Lewis, P.; Hagen, C.

    2014-11-15

    Photons in the MeV range emitted from the dense plasma focus (DPF) at the NSTec North Las Vegas Facility have been measured with both neutron-damaged GaAs and natural diamond photoconductive detectors (PCDs). The DPF creates or “pinches” plasmas of various gases (e.g., H{sub 2}, D{sub 2}, Ne, Ar., etc.) that have enough energy to create MeV photons from either bremsstrahlung and/or (n,n{sup ′}) reactions if D{sub 2} gas is used. The high bandwidth of the PCDs enabled the first ever measurement of the fast micro-pinches present in DPF plasmas. Comparisons between a slower more conventional scintillator/photomultiplier tube based nuclear physics detectors were made to validate the response of the PCDs to fast intense MeV photon signals. Significant discrepancies in the diamond PCD responses were evident.

  20. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  1. Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms.

    PubMed

    Wallace, Patrick M; Sims, Patrick E; Xu, Chi; Poweleit, Christian D; Kouvetakis, John; Menéndez, José

    2017-09-26

    Epitaxial synthesis of Ga(As1-xPx)Ge3 alloys on Si(100) substrates is demonstrated using chemical vapor deposition reactions of [D2GaN(CH3)2]2 with P(GeH3)3 and As(GeH3)3 precursors. These compounds are chosen to promote the formation of GaAsGe3 and GaPGe3 building blocks which interlink to produce the desired crystalline product. Ge-rich (GaP)yGe5-2y analogues have also been grown with tunable Ge contents up to 90% by reactions of P(GeH3)3 with [D2GaN(CH3)2]2 under similar deposition protocols. In both cases, the crystal growth utilized Ge1-xSix buffer layers whose lattice constants were specifically tuned as a function of composition to allow perfect lattice matching with the target epilayers. This approach yielded single-phase materials with excellent crystallinity devoid of mismatch-induced dislocations. The lattice parameters of Ga(As1-xPx)Ge3 interpolated among the Ge, GaAs, and GaP end members, corroborating the Rutherford backscattering measurements of the P/As ratio. A small deviation from the Vegard's law that depends on the As/P ratio was observed and corroborated by ab initio calculations. Raman scattering shows evidence for the existence of Ga-As and Ga-P bonds in the Ge matrix. The As-rich samples exhibited photoluminescence with wavelengths similar to those observed for pure GaAsGe3, indicating that the emission profile does not change in any measurable manner by replacing As by P over a broad range up to x = 0.2. Furthermore, the photoluminescence (PL) data suggested a large negative bowing of the band gap as expected on account of a strong valence band localization on the As atoms. Spectroscopic ellipsometry measurements of the dielectric function revealed a distinct direct gap transition that closely matches the PL emission energy. These measurements also showed that the absorption coefficients can be systematically tuned as a function of composition, indicating possible applications of the new materials in optoelectronics, including photovoltaics.

  2. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  3. Improved Hold-Off Characteristics of Gallium Arsenide Photoconductive Switches Used in High Power Applications

    DTIC Science & Technology

    1999-06-01

    that affect the performance of the switches, specifically at high power operation. Surface flashover or the premature breakdown of the PCSS [6] is...Hankla, " Surface flashover for Silicon", SPIE, Vol. 1378 Optically Activated Switches, 217 (1990). [7] N. E. Islam, E. Schamiloglu and C. B...the hold-off characteristics. Opposed contact switches, made from intrinsic GaAs have the characteristics of ’relaxation’ semiconductors . The

  4. A 32-bit RISC Implemented in Enhancement-Mode JFET GaAs

    SciTech Connect

    Rasset, L.; Niederland, A.; Lane, J. A.; Geideman, W. A.

    1986-10-01

    Recently, considerable attention has been focused on gallium arsenide (GaAs) semiconductor process technologies for very high speed digital integrated circuits. This attention is motivated primarily by the ability of GaAs transistors to switch much faster with lower power consumption than transistors in silicon technologies. Soon to be available with higher switching speed and more transistors than the fastest silicon technology (emitter-coupled logic), GaAs digital ICs will be a boon to developers of super-computers and specialized high-speed microprocessors, such as digital signal processors. GaAs transistors are also much more resistant to temperature extremes and to ionizing radiation than silicon, important features for applications requiring operation in harsh environments. This does not mean that GaAs will replace silicon; rather, where the higher cost of GaAs is warranted by application requirements that only GaAs can satisfy, it will augment silicon. The high cost of GaAs chips is due mainly to the scarcity of gallium and the inferior quality and difficulty in manufacturing the gallium arsenide compound. Unlike silicon, which is very uniform and pure, GaAs has many defects and its characteristics may vary considerably from ingot to ingot, affecting yield. Also, the wafers have a tendency to break during processing.

  5. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  6. Photoconducting positions monitor and imaging detector

    DOEpatents

    Shu, Deming; Kuzay, Tuncer M.

    2000-01-01

    A photoconductive, high energy photon beam detector/monitor for detecting x-rays and gamma radiation, having a thin, disk-shaped diamond substrate with a first and second surface, and electrically conductive coatings, or electrodes, of a predetermined configuration or pattern, disposed on the surfaces of the substrate. A voltage source and a current amplifier is connected to the electrodes to provide a voltage bias to the electrodes and to amplify signals from the detector.

  7. Microwave response of a HEMT photoconductive detector

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.

  8. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  9. Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs

    SciTech Connect

    Satoh, M.; Kawahara, H.; Kuriyama, K.; Kawakubo, T.; Yoneda, K.; Kimura, I.

    1988-02-15

    The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 /sup 0/C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (As/sub Ga/) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, As/sub Ga/less than or equal to1 x 10/sup 18/ cm/sup -3/, consists of the coexistence of the hopping and band conductions.

  10. Analysis of photoconductive mechanisms of organic-on-inorganic photodiodes

    NASA Astrophysics Data System (ADS)

    Ocaya, R. O.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Yakuphanoglu, F.

    2017-09-01

    In this work, it is shown that choosing an organic-on-inorganic Schottky diode for photoconductive sensing by a using a power law exponent (PLE or γ) determined at a single bias point is a limited approach. The standard literature approach does not highlight any bias voltage effects on the distribution of interface state density and other operationally important parameters. In this paper we suggest a new empirical method that holistically highlights the variation of γ with voltage, irradiance and temperature to reach a more informed choice of photosensor for real applications. We obtain a simple, plausible relation of the variation of barrier height, Φ, with voltage, irradiance and temperature. The method is evaluated with data collected previously for Schottky diodes of structure Al/p-Si/organic-semiconductor (OSC)/Au, where OSC is Coumarin-doped with graphene oxide (GO), Cobalt Phthacyanine (CoPC) doped with GO or PCBM doped with GO, respectively. The method reproduces published data for the three diodes reported at specific bias and provides for the first time some qualitative evidence of barrier height variation with light intensity, for which a possible physical basis is also given. Typically, Schottky barrier height is characterized using dark current leading to an under reporting of the effect of illumination on barrier height. Finally, since recombination mechanisms are gauged on the basis of the magnitude of PLE, the method facilitates the identification of the recombination mechanism at a given bias.

  11. Sensor Detects Semiconductor Escaping From Ampoule

    NASA Technical Reports Server (NTRS)

    Watring, Dale A.; Johnson, Martin L.

    1994-01-01

    Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

  12. Sensor Detects Semiconductor Escaping From Ampoule

    NASA Technical Reports Server (NTRS)

    Watring, Dale A.; Johnson, Martin L.

    1994-01-01

    Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

  13. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  14. Below-band-gap absorption in undoped GaAs at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Wasiak, Michał; Walczak, Jarosław; Motyka, Marcin; Janiak, Filip; Trajnerowicz, Artur; Jasik, Agata

    2017-02-01

    This paper presents results of measurements of optical absorption in undoped epitaxial GaAs for photon energies below the band gap. Absorption spectra were determined from transmission spectra of a thin GaAs layer at several temperatures between 25 °C and 205 °C. We optimized our experiment to investigate the long-wavelength part of the spectrum, where the absorption is relatively low, but significant from the point of view of applications of GaAs in semiconductor lasers. Absorption of 100 cm-1 was observed over 30 nm below the band gap at high temperatures.

  15. Enhanced Terahertz Radiation Generation of Photoconductive Antennas Based on Manganese Ferrite Nanoparticles

    PubMed Central

    Lai, Weien; Mazin Abdulmunem, Oday; del Pino, Pablo; Pelaz, Beatriz; Parak, Wolfgang J.; Zhang, Qian; Zhang, Huaiwu

    2017-01-01

    This paper presents a significant effect of manganese ferrite nanoparticles (MnFe2O4 NPs) on the increase of the surface photoconductivity of semiconductors. Herein, the optical characterization of photo-excited carriers of silicon coated with MnFe2O4 NPs was studied by using THz time-domain spectroscopy (THz-TDs). We observed that silicon coated with MnFe2O4 NPs provided a significantly enhanced attenuation of THz radiation in comparison with bare silicon substrates under laser irradiation. The experimental results were assessed in the context of a surface band structure model of semiconductors. In addition, photoconductive antennas coated with MnFe2O4 NPs significantly improved the efficiency of THz radiation generation and signal to noise ratio of the THz signal. This work demonstrates that coating with MnFe2O4 NPs could improve the overall performance of THz systems, and MnFe2O4 NPs could be further used for the implementation of novel optical devices. PMID:28393855

  16. Enhanced Terahertz Radiation Generation of Photoconductive Antennas Based on Manganese Ferrite Nanoparticles.

    PubMed

    Lai, Weien; Mazin Abdulmunem, Oday; Del Pino, Pablo; Pelaz, Beatriz; Parak, Wolfgang J; Zhang, Qian; Zhang, Huaiwu

    2017-04-10

    This paper presents a significant effect of manganese ferrite nanoparticles (MnFe2O4 NPs) on the increase of the surface photoconductivity of semiconductors. Herein, the optical characterization of photo-excited carriers of silicon coated with MnFe2O4 NPs was studied by using THz time-domain spectroscopy (THz-TDs). We observed that silicon coated with MnFe2O4 NPs provided a significantly enhanced attenuation of THz radiation in comparison with bare silicon substrates under laser irradiation. The experimental results were assessed in the context of a surface band structure model of semiconductors. In addition, photoconductive antennas coated with MnFe2O4 NPs significantly improved the efficiency of THz radiation generation and signal to noise ratio of the THz signal. This work demonstrates that coating with MnFe2O4 NPs could improve the overall performance of THz systems, and MnFe2O4 NPs could be further used for the implementation of novel optical devices.

  17. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals.

    PubMed

    Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M; Kamysbayev, Vladislav; Filatov, Alexander S; Sun, Cheng-Jun; Lee, Byeongdu; Rajh, Tijana; Schaller, Richard D; Talapin, Dmitri V

    2017-03-08

    GaAs is one of the most important semiconductors. However, colloidal GaAs nanocrystals remain largely unexplored because of the difficulties with their synthesis. Traditional synthetic routes either fail to produce pure GaAs phase or result in materials whose optical properties are very different from the behavior expected for quantum dots of direct-gap semiconductors. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS, transient absorption, and EPR spectroscopies, we conclude that unusual optical properties of colloidal GaAs NCs can be related to the presence of Ga vacancies and lattice disorder. These defects do not manifest themselves in TEM images and powder X-ray diffraction patterns but are responsible for the lack of absorption features even in apparently crystalline GaAs nanoparticles. We introduce a novel molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.

  18. Chemically Derivatized Semiconductor Photoelectrodes.

    DTIC Science & Technology

    1982-01-04

    as Si, Ge, and GaAs derivatized with reagents based on ferrocene such as those represented by I and II. Work with p-type semiconductor photoelectrode...Concerning n-type Si it was found that EtOH/0.1 M En-Bu4N)C104 solutions containing A = ferrocene and A+ = ferri-- cinium result in a constant output of...electrical energy from an illuminated photoelectrochemical device configured as in Scheme II.(20) The ferrocene captures the photogenerated h+ at a rate -4

  19. Semiconductor Eutectic Solar Cell.

    DTIC Science & Technology

    1986-12-01

    InSb - NiSb Es an... InSb - NiSb , InSb -FeSb, InSb -MnSb und InSb -CrSb", J. Phys. Chem. Solids, 26, 2021 (1965). 11. A. Muller and M. Wilhelm, "Das Eutektikum InSb -Mg 3 Sb’" Z...infant stages for use. In semiconducting eutectics, efforts were paid to eutectic systems which consist of III-V semiconductor phases, such as GaAs, InSb

  20. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  1. Surface structure of GaAs(2 5 11)

    NASA Astrophysics Data System (ADS)

    Geelhaar, L.; Temko, Y.; Márquez, J.; Kratzer, P.; Jacobi, K.

    2002-04-01

    GaAs samples with orientations vicinal to (2 5 11) within 1° were prepared by molecular beam epitaxy and analyzed in situ by scanning tunneling microscopy, low-energy electron diffraction, and reflection high-energy electron diffraction. In addition, first-principles electronic structure calculations were carried out. GaAs(2 5 11) is a stable surface whose orientation is located within the stereographic triangle. For a wide range of As-rich conditions a (1×1) reconstruction forms that is characterized by an inclined series of three As dimers and that fulfills the electron counting rule. The terrace size is limited only by the macroscopic off-orientation of the samples. The surface is perturbed by thin stripes of the nearby orientation (3 7 15). While the dangling bond densities of GaAs(2 5 11) and GaAs(3 7 15) are almost equal, GaAs(3 7 15) violates the electron counting rule. The analysis of this perturbation suggests that, in general, on semiconductor surfaces the gain in stability arising from the minimization of the number of dangling bonds is significantly greater than the gain arising from reaching a semiconducting ground state. Upon annealing of the samples in ultrahigh vacuum, a fairly rough surface structure develops whose mean orientation is different from (2 5 11).

  2. Semiconductor electrolyte photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  3. Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

    NASA Astrophysics Data System (ADS)

    Mikulics, M.; Hardtdegen, H.; Adam, R.; Grützmacher, D.; Gregušová, D.; Novák, J.; Kordoš, P.; Sofer, Z.; Serafini, J.; Zhang, J.; Sobolewski, Roman; Marso, M.

    2014-04-01

    We report on the impact of thermal annealing to carrier transport and transient, subpicosecond photoresponse of freestanding GaAs mesostructures. Our measurements included micro-photoluminescence and dark current and responsivity studies as well as optical femtosecond characterization. The fabricated GaAs mesostructures consisted of both mesowires and platelets that were integrated into coplanar striplines to form a photoconductive switch. We demonstrate that an optimized annealing process of our mesostructures, performed at 600 °C for 20 min, led to restoring bulklike properties of our freestanding devices. They exhibited dark currents below 600 pA at 10 V bias, responsivity of 0.2 A W-1 at 30 V, and mobility as high as 7300 cm2 V s-1. The annealed freestanding GaAs photodetectors were characterized by subpicosecond carrier relaxation dynamics with negligible trapping and a cutoff frequency of 1.3 THz. The latter characteristics make them excellent candidates for THz-bandwidth optoelectronics.

  4. Optical correlators with fast updating speed using photorefractive semiconductor materials

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  5. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  6. Scalable high-power optically pumped GaAs laser

    NASA Astrophysics Data System (ADS)

    Le, H. Q.; di Cecca, S.; Mooradian, A.

    1991-05-01

    The use of disk geometry, optically pumped semiconductor gain elements for high-power scalability and good transverse mode quality has been studied. A room-temperature TEM00 transverse mode, external-cavity GaAs disk laser has been demonstrated with 500 W peak-power output and 40-percent slope efficiency, when pumped by a Ti:Al2O3 laser. The conditions for diode laser pumping are shown to be consistent with available power level.

  7. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  8. Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs

    SciTech Connect

    Kuriyama, K.; Takahashi, H.; Kawahara, H. ); Hayashi, N.; Watanabe, H.; Sakamoto, I. ); Kohno, I. )

    1990-12-15

    In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10{sup 13} /cm{sup 2}, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 {degree}C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2{sup +}) to the neutral EL2{sup 0}.

  9. Photo-induced defects and photoconductivity in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Okamoto, H.; Kida, H.; Hamakawa, Y.

    1984-02-01

    An essential connection between photo-induced defects and photoconductivity in amorphous silicon is discussed within the framework of Street's defect creation model. The excitation intensity dependence and doping level dependence of the photo-induced defect density and photoconductivity are derived on the basis of simple rate equation analysis, and compared with experimental data.

  10. Development and Testing of Gallium Arsenide Photoconductive Detectors for Ultra Fast, High Dose Rate Pulsed Electron and Bremsstrahlung Radiation Measurements

    SciTech Connect

    Kharashvili, George; Makarashvili, Vakhtang; Mitchell, Marc; Beezhold, Wendland; Spaulding, Randy; Wells, Douglas; Gesell, Thomas; Wingert, Wayne

    2009-03-10

    Real time radiation dose measurements are challenging in high dose rate environments such as those used for testing electronic devices or biological agents. Dosimetry needs in pulsed reactor fields and particle accelerator facilities require development of dosimeters with fast (10 s of picoseconds) response to pulsed radiation, linear response over a wide range of dose rates (up to 10{sup 11} Gy/s), high resistance to radiation damage, and successful operation in mixed gamma and neutron environments. Gallium arsenide photoconductive detectors (GaAs PCD) have been shown to exhibit many of these desirable characteristics, especially fast time response. Less than 50 ps time resolution has been demonstrated when previously irradiated by fission neutrons. We have conducted a study of the response-time dependence on neutron fluence, starting with fluences at {approx}10{sup 14} n/cm{sup 2}. A 23-MeV electron beam was used to produce photoneutrons in a tungsten target for irradiation of a GaAs wafer from which PCDs were made. The process was modeled using MCNPX computer code and the simulation results were compared to the experimental measurements. GaAs PCDs were fabricated from both neutron-irradiated and non-irradiated GaAs samples. The results of the preliminary tests of these devices in accelerator-produced pulses of electron and bremsstrahlung radiation of various energies (13 to 35 MeV) and pulse lengths (100 ps to 4 {mu}s) are presented together with an overview of the future plans of continuing GaAs PCD research at Idaho State University.

  11. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  12. Properties and applications of photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Liu, Duncan T. H.

    1990-01-01

    Photorefractive semiconductors have the attractive features of fast response times and operation at near-infrared wavelengths. This has opened some new research opportunities in the field of photorefractive nonlinear optics which is significant for applications in real-time image processing and optical computing. This paper presents recent experimental demonstrations of several basic optical information processing techniques using photorefractive GaAs crystals. The results of these demonstrations illustrate that photorefractive compound semiconductors has a great potential as a new medium for light beam interaction based on the dynamic holographic principle.

  13. Electronic Properties of Semiconductor Interfaces.

    DTIC Science & Technology

    1983-02-01

    AD-A130 745 ELECTRONIC PROPERTIES OF SEMICONDUCTOR INTERFACES(U) /; UNIVERSIDAD AUfONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO F FLORES...J.Sfinchez-Dehesa 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT. PROJECT. TASK AREA & WORK UNIT NUMBERS Departamento de Fisica del...resistance (Esaki and Chang 1974). A SL which has received a great deal of attention is GaAs- AlxGa Ix as grown by molecular -beam-epitaxy. Several

  14. Optical control of semiconductor closing and opening switches

    NASA Astrophysics Data System (ADS)

    Lee, Chi H.

    1990-12-01

    Recent progress in the research of high-power photoconductive semiconductor switches is reviewed. Material issues and switch design considerations are discussed. High-power ultra-wide-band microwave generation using these switches and a pulse-forming network is presented. The application of the photoconductive switch both as a closing and as an opening switch in an inductive energy storage system has been demonstrated. Electric pulse compression with a peak power gain of 30 has been observed. Future prospects in this area of research are discussed.

  15. Metal Organic-Chemical Vapor Deposition fabrication of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Thomas, C.

    1980-08-01

    The metal organic chemical vapor deposition (MO-CVD) process was studied and implemented in detail. Single crystal GaAs, and Ga(x)Al(1-x)As films were grown on GaAs by depositing metal organic alkyl gallium compounds in the presence of an arsine mixture. The metal organic chemical vapor deposition process allowed formation of the semiconductor compound directly on the heated substrate in only one hot temperature zone. With MO-CVD, semiconductor films can be efficiently produced by a more economical, less complicated process which will lend itself more easily than past fabrication procedures, to high quantity, high quality reproduction techniques of semiconductor lasers. Clearly MO-CVD is of interest to the communication industry where semiconductor lasers are used extensively in fiber optic communication systems, and similarly to the solar energy business where GaAs substrates are used as photoelectric cells.

  16. Review of terahertz photoconductive antenna technology

    NASA Astrophysics Data System (ADS)

    Burford, Nathan M.; El-Shenawee, Magda O.

    2017-01-01

    Photoconductive antennas (PCAs) have been extensively utilized for the generation and detection of both pulsed broadband and single frequency continuous wave terahertz (THz) band radiation. These devices form the basis of many THz imaging and spectroscopy systems, which have demonstrated promising applications in various industries and research fields. The development of THz PCA technology through the last 30 years is reviewed. The key modalities of improving device performance are identified, and literature is reviewed to summarize the progress made in these areas. The goal of this review is to provide a collection of all relevant literature to bring researchers up to date on the current state and remaining challenges of THz PCA technology.

  17. [Impulse photoconductivity of chlorophyll and its analogs].

    PubMed

    Chernikov, V S

    1980-01-01

    Impute photoconductivity of pyridine solutions of chlorophyll a and pheophytin a in the presence of phenylhydrasin was studied, as well as that of tetraphenylporphin, zinc-tetraphenylporphin, mezoporphyrin, zinc-mezoporphyrin, and palladium-mezoporphyrin in the presence of hydrasin hydrate depending on flash intensity and temperature (20--30 degrees C). The lifetimes of anion-radicals and monoprotonated dianions of the studied pigments were estimated, as well as activation energies of some intermediate stages of photoreduction. From the data obtained the ratio between the constant of the death rate of anion-radicals and the total mobility of negative and positive ion-radical was found.

  18. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  19. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  20. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  1. Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

    DTIC Science & Technology

    1985-04-01

    design techniques for microwave GaAs FET ampl ifiers. TASK 8 Improve direct method of broad band circuit design. TASK 9 Use optical excitation to...pulse, gain and speed of the detector circuit at high speeds is determined . Analytical models of interdigitated large area photoconductive detectors...biasing scheme, there are less circuit nodes to bypass. Also, improved capacitors have been obtained for the circuit bypassing. They are smaller in

  2. Temperature sensitive photoconductivity observed in InN layers

    NASA Astrophysics Data System (ADS)

    Guo, Lei; Wang, Xinqiang; Feng, Li; Zheng, Xiantong; Chen, Guang; Yang, Xuelin; Xu, Fujun; Tang, Ning; Lu, Liwu; Ge, Weikun; Shen, Bo

    2013-02-01

    Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100-300 K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well.

  3. Photoconductive logic gate based on platinum decorated carbon nanotubes.

    PubMed

    Mercado-Zúñiga, C; Vargas-García, J R; Cervantes-Sodi, F; Trejo-Valdez, M; Torres-Martínez, R; Torres-Torres, C

    2013-08-01

    Electrical and nonlinear optical experiments were performed on multiwall carbon nanotubes (CNTs) prepared by a chemical vapor deposition method. We report that the incorporation of platinum particles on the CNTs surface originates an enhancement in the photoconductive properties with noticeable capabilities to modulate optical and electrical signals. The photoconductive logic gate function OR was experimentally demonstrated using a simple photoconductive platform based on our samples. A two-photon absorption effect was identified as the main mechanism of third-order optical nonlinearity under a nonresonant nanosecond excitation. Multiphotonic interactions were described in order to explain the observed behavior.

  4. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  5. Failure Mechanisms in GaAs ICs: The Effects of Deep Traps

    DTIC Science & Technology

    1991-10-01

    R. Ehle, "Process-induced defects in high-purity GaAs," Defects in Semiconductors II, Symposium Proceedings, pp. 283-7, 1983. [21J J. S. Blakemore ...Table 2-1. With a minimum of five devices in each class, a reasonable amount of statistical analysis is possible at reasonable cost. Characterization of...fact that defects, like atoms, can bind a number of electrons, each with its own energy level. In the semiconductor defect literature, these states are

  6. The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

    NASA Astrophysics Data System (ADS)

    Sun, Jian; Dai, Qian; Liu, FengJuan; Huang, HaiQin; Li, ZhenJun; Zhang, XiQing; Wang, YongSheng

    2011-01-01

    We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized using various techniques. At 6 V bias, a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained, and this responsibility dropped quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.

  7. First principles study of bismuth alloying effects in GaAs saturable absorber.

    PubMed

    Li, Dechun; Yang, Ming; Zhao, Shengzhi; Cai, Yongqing; Feng, Yuanping

    2012-05-07

    First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBi(x)As(1-x) alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

  8. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  9. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  10. Negative photoconductance in heavily doped Si nanowire field-effect transistors.

    PubMed

    Baek, Eunhye; Rim, Taiuk; Schuett, Julian; Baraban, Larysa; Cuniberti, Gianaurelio

    2017-09-29

    We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photo-generated hot electrons trapping by dopants ions and interfacial states. Remarkably, as a comparison of back- and top-gate modulation, we derive the mechanisms of the transition between the negative and the positive conventional photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.

  11. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    SciTech Connect

    Sullivan, J S; Stanley, J R

    2007-02-13

    Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

  12. Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

    SciTech Connect

    Hosseini, T.; Kouklin, N.; Tomer, D.; Rajput, S.; Li, L.

    2014-12-01

    Vertically integrated graphene-semiconductor systems remain of significant technological importance for their promise to captivate new device physics and propel the development of advanced carbon-based opto-electronic devices. In this study, we carry out a series of bias-dependent transport, gate-dependent transport, and photoconduction measurements to probe the opto-electronic characteristics of metal-graphene-4H-SiC (0001) (Si-face) heterojunctions. The forward bias transport is found to deviate strongly from thermionic emission one as being controlled by the device circuitry and minority carrier injection mechanisms. An improved analytical model is offered and used to extract key junction parameters including series resistance of ∼80 kΩ, interface barrier height of ∼0.6 eV, and ideality factor of ∼6.1. The results of the photocurrent tests point to a light-assisted minority carrier injection as a key mechanism behind the photoconductive gain obtained in the devices subject to a weak, sub-bandgap cw-excitation.

  13. Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

    NASA Astrophysics Data System (ADS)

    Hosseini, T.; Tomer, D.; Rajput, S.; Li, L.; Kouklin, N.

    2014-12-01

    Vertically integrated graphene-semiconductor systems remain of significant technological importance for their promise to captivate new device physics and propel the development of advanced carbon-based opto-electronic devices. In this study, we carry out a series of bias-dependent transport, gate-dependent transport, and photoconduction measurements to probe the opto-electronic characteristics of metal-graphene-4H-SiC (0001) (Si-face) heterojunctions. The forward bias transport is found to deviate strongly from thermionic emission one as being controlled by the device circuitry and minority carrier injection mechanisms. An improved analytical model is offered and used to extract key junction parameters including series resistance of ˜80 kΩ, interface barrier height of ˜0.6 eV, and ideality factor of ˜6.1. The results of the photocurrent tests point to a light-assisted minority carrier injection as a key mechanism behind the photoconductive gain obtained in the devices subject to a weak, sub-bandgap cw-excitation.

  14. Solar-blind-ultraviolet extraordinary transmission for ultrasensitive photoconductive detector based on plasmonic subwavelength interdigital electrodes

    NASA Astrophysics Data System (ADS)

    Peng, Nan; Huang, Feng; Chu, Sheng; Chen, Hao

    2016-12-01

    The solar-blind-ultraviolet (SBUV) detection industry demands high sensitivity as well as easy processability for its semiconductor devices. Photoconductive detectors have the simplest structure. However, the electrodes covering the illuminated side cause optical shielding losses, resulting in a relatively low sensitivity of such devices. Through finite-difference time-domain (FDTD) simulation, we demonstrated that surface-plasmon-based enhanced SBUV transmission is achievable for Al interdigital electrodes (IDEs) with a period  ⩽200 nm and an interval  ⩾140 nm. Under this parameter setting, a larger interval and smaller period leads to further enhancement of SBUV transmission. Particularly, we have found that different possible dielectric environments, such as Ni insertion, Al oxidization, and MgF2 anti-oxidation, would not exert fatal effects on this enhancement. Besides, such an enhancement is maintained under the angle of incidence within 10°, which is large enough for practical SBUV detection. Our research reveals the feasibility of high sensitivity by a simple photoconductive device, showing profound significance for an applicable SBUV detector.

  15. The effect of annealing on the photoconductivity of carbon nanofiber/TiO2 core-shell nanowires for use in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Rochford, Caitlin; Li, Zhuang-Zhi; Baca, Javier; Liu, Jianwei; Li, Jun; Wu, Judy

    2010-07-01

    Electrical transport properties and photoresponse of individual TiO2-coated carbon nanofibers were studied in an attempt to elucidate the limiting factors of core-shell nanowire-based dye-sensitized solar cells (DSSC). The role of the semiconductor shell microstructure was investigated by comparing as grown and thermally annealed samples. Steady state I-V and transient photoconductivity measurements suggest that improving the microstructure leads to reduced resistivity and contact resistance, a decrease in charge traps, improved surface stoichiometry for dye adsorption, and reduced absorption of visible light by the semiconductor, all of which may improve nanowire-based DSSC performance.

  16. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

    NASA Astrophysics Data System (ADS)

    Khalil, Hagir M.; Royall, Ben; Mazzucato, Simone; Balkan, Naci

    2012-09-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out.

  17. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

    PubMed

    Khalil, Hagir M; Royall, Ben; Mazzucato, Simone; Balkan, Naci

    2012-09-28

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out.

  18. Effects of two-photon absorption on terahertz radiation generated by femtosecond-laser excited photoconductive antennas.

    PubMed

    Lee, Chao-Kuei; Yang, Chan-Shan; Lin, Sung-Hui; Huang, Shiuan-Hua; Wada, Osamu; Pan, Ci-Ling

    2011-11-21

    Terahertz (THz) radiation can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by considering the two-photon absorption (TPA) induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The use of transform-limited pulses at the PC antenna is critical experimentally. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions. The interplay of intensity dependence and dynamics of generation of photoexcited carriers by single-photon absorption and TPA for THz emission is discussed.

  19. Steady-state photoconductivity of amorphous (As4S3Se3)1-x:Snx films

    NASA Astrophysics Data System (ADS)

    Iaseniuc, O. V.; Iovu, M. S.; Cojocaru, I. A.; Prisacar, A. M.

    2015-02-01

    Amorphous arsenic trisulfide (As2S3) and arsenic triselenide (As2Se3) are among widely investigated amorphous materials due to its interesting electrical, optical and photoelectrical properties. In order to improve the physical properties and recording characteristics, and to extend the spectral range of photosensibility, a special interest represents the mixed amorphous materials, like (As2S3):(As2Se3). Chalcogenide vitreous semiconductors (ChVS) of the As-S-Se system exhibit photostructural transformations with reversible and irreversible properties, and are promising materials as registration media for holography and optical information, for fabrication of diffractive elements, and other optoelectronic applications. Because many optoelectronic devices on amorphous semiconductors are based on the photoconductivity effect, special interests represent investigation of the stationary and non-stationary characteristics of photoconductivity. In this paper the experimental results of steady-state photoconductivity and holographic characteristics of amorphous (As4S3Se3)1-x:Snx thin films are presented. It was shown that the photoconductivity spectra depend on the polarity on the top illuminated electrode and on the Sn concentration in the host glass. The photosensitivity of amorphous ((As4S3Se3)1-x:Snx thin films is almost constant for all Sn-containing glasses. The Moss rule was used for determination of the optical forbidden gap Eg from the photoconductivity spectra. It was demonstrated that the investigated amorphous films are sensitive to the light irradiation and can be used as effective registration media for holographic information. The relaxation of photodarkening in amorphous (As4S3Se3)1-x:Snx thin films was investigated and was shown that the relaxation curves of transmittance T/T0 = f(t) can be described the stretch exponential function T(t)/T(0) = A0+Aexp[-(t-t0)/τ] (1-β) . The kinetics of diffraction efficiency growth η(t) was measured by registration of

  20. Photoconductivity and photoconversion at a photorefractive thin crystal plate

    NASA Astrophysics Data System (ADS)

    Frejlich, Jaime; de Oliveira, Ivan; de Araujo, William R.; Carvalho, Jesiel F.; Montenegro, Renata; Georges, Marc; Fleury-Frenette, Karl

    2016-05-01

    We report on the photoconductivity and the photoelectric conversion measured on a thin photorefractive sillenite crystal plate, between transparent electrodes, in the longitudinal configuration where the current is measured along the same direction of the light beam through the sample. Its behavior is based on the already reported light-induced Schottky effect. The wavelength for optimal photoconductivity is determined. A specific parameter is formulated here for quantitatively determining the photoelectric conversion efficiency of the sandwiched material.

  1. Visible-light photoconductivity of Zn1-xCoxO and its dependence on Co2+ concentration

    SciTech Connect

    Johnson, Claire A.; Cohn, Alicia; Kaspar, Tiffany C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2011-09-06

    Many metal oxides investigated for solar photocatalysis or photoelectrochemistry have band gaps that are too wide to absorb a sufficient portion of the solar spectrum. Doping with impurity ions has been extensively explored as a strategy to sensitize such oxides to visible light, but the electronic structures of the resulting materials are frequently complex and poorly understood. Here, we report a detailed photoconductivity investigation of the wide-gap II-VI semiconductor ZnO doped with Co2+ (Zn1-xCoxO), which responds to visible light in photoelectrochemical and photoconductivity experiments and thus represents a well-defined model system for understanding dopant-sensitized oxides. Variable-temperature scanning photoconductivity measurements have been performed on high-structural-quality Zn1-xCoxO epitaxial films to examine the relationship between dopant concentration (x) and visible-light photoconductivity, with particular focus on mid-gap d-d photoactivity. Excitation into the intense 4T1(P) d-d band at ~2.0 eV (620 nm) leads to Co2+/3+ ionization with a quantum efficiency that increases with decreasing cobalt concentration and increasing sample temperature. Both spontaneous and thermally assisted ionization from the Co2+ d-d excited state are found to become less effective as x is increased, attributed to an increasing conduction-band-edge potential. These trends counter the increasing light absorption with increasing x, explaining the experimental maximum in external photon-to-current conversion efficiencies at values well below the solid solubility of Co2+ in ZnO.

  2. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts

    NASA Astrophysics Data System (ADS)

    Li, Liang; Auer, Erwin; Liao, Meiyong; Fang, Xiaosheng; Zhai, Tianyou; Gautam, Ujjal K.; Lugstein, Alois; Koide, Yasuo; Bando, Yoshio; Golberg, Dmitri

    2011-03-01

    We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches.

  3. N-doped ZnO based fast response ultraviolet photoconductive detector

    NASA Astrophysics Data System (ADS)

    Shinde, S. S.; Bhosale, C. H.; Rajpure, K. Y.

    2012-02-01

    We report a study on the fabrication and characterization of ultraviolet photodetectors based on N-doped ZnO films. Highly oriented N-doped ZnO films with 10 at.% N doping are deposited using spray pyrolysis technique onto glass substrates. The photoconductive UV detector based on N-doped ZnO thin films, having a metal-semiconductor-metal (MSM) configuration are fabricated by using Al as a contact metal. I- V characteristic under dark and UV illumination, spectral and transient response of ZnO and N-doped ZnO photodetector are studied. The photocurrent increases linearly with incident power density by more than two orders of magnitude. The photoresponsivity (580 A/W at 365 nm with 5 V bias, light power density 2 μW/cm 2) is much higher in the ultraviolet region than in the visible.

  4. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    SciTech Connect

    Takano, H.; Hosogi, K.; Kato, T.

    1995-05-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.

  5. Interfacial structures of oxides on GaAs

    NASA Astrophysics Data System (ADS)

    Chou, Li-Jen

    The realization of the GaAs-based metal-oxide-semiconductor field effect transistor (MOSFET) has been a subject of interest for many years. There remains an unfulfilled need for a good insulator to enable the GaAs-equivalent of Si complimentory metal-oxide-semiconductor (CMOS) technology. Amorphous insulator, flat insulator/semiconductor interface and low interfacial trap density are three key elements to the realization of such a metal-oxide-semiconductor (MOS) structure. This dissertation discusses the characterization and processing of GaAs-based MOS structure using native oxide (Alsb2Osb3) formed via wet oxidation or using various oxides deposited in ultra high vacuum as the gate oxide. For the native oxide/GaAs work, a truly amorphous layer of Alsb2Osb3 via wet oxidation of amorphous (Al,As) on GaAs and InP has been achieved. A physically flat interface between the oxide and semiconductor using a thin GaP interlayer as a oxidation stop layer has been reported. The roughness scale is below 15 A, which is comparable to the interface of the SiOsb2/Si counterpart. Three orders of magnitude of the photoluminescence intensity enhancement indicates that the electronic trap density has been reduced significantly along the interface; however, the porous structure in the amorphous oxide results in structural weakness to sustain the physical vigor in processing. For the deposited oxide/GaAs work, only deposition of (Ga,Gd)sb2Osb3 oxide among others shows a low interface trap density (Dsb{it}) at the oxide-GaAs interface. It is low enough to warrant the demonstration of both n- and p-channel enhancement GaAs MOSFETs. High-resolution transmission electron microscopy (HRTEM) indicates that deposition of MgO, Alsb2Osb3, and Gasb2Osb3, fail to yield a truly amorphous oxide. Although deposition of SiOsb2 results in an amorphous oxide. There lacks a transition layer between SiOsb2 and GaAs. A correlation between high-low frequency capacitance-voltage (C-V) phenomenon and

  6. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  7. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  8. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  9. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  10. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

    SciTech Connect

    McGregor, D.S.; Rojeski, R.A.; Knoll, G.F. ); Terry, F.L. Jr.; East, J. ); Eisen, Y. )

    1994-06-15

    The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

  11. Dynamics of the cascade capture of electrons by charged donors in GaAs and InP

    SciTech Connect

    Aleshkin, V. Ya. Gavrilenko, L. V.

    2016-08-15

    The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov–Perel–Yassievich formula for a charged impurity concentration greater than 10{sup 10} cm{sup –3}. The cause of this difference has been established. The Abakumov–Perel–Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate on the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.

  12. Three-phase photoconductive elements for directional free-space optical sensing

    NASA Astrophysics Data System (ADS)

    Jin, Xian; Guerrero, Daniel; Holzman, Jonathan F.

    2012-02-01

    An integrated photoconductive (PC) element is introduced as a new optoelectronic device in free-space optical (FSO) wireless applications. The device is a fundamental extension of the standard PC switch, as it has the capabilities for both local optoelectronic signal reception and active directional angle of arrival (AOA) sensing. This second capability is brought about through the use of a three-phase differential technique through three triangular PC switches arranged in a corner-cube architecture. Each PC switch is comprised of 50/150 nm Cr/Au electrodes, patterned on either side of a 200- micron GaAs PC gap, and is biased with the superposition of common DC and AC three-phase (120° phase-shifted) bias voltages. The DC bias forms a summed signal photocurrent on the central vertex output electrode and facilitates data reception; the AC three-phase bias facilitates link reliability for diversity reception in optical wireless communication systems. Complete theoretical and experimental angular characteristics of this device are presented in this work.

  13. Photoconductivity in AC-driven modulated two-dimensional electron gas in a perpendicular magnetic field.

    PubMed

    Torres, Manuel; Kunold, Alejandro

    2006-04-26

    In this work we study the microwave photoconductivity of a two-dimensional electron system (2DES) in the presence of a magnetic field and a two-dimensional modulation (2D). The model includes the microwave and Landau contributions in a non-perturbative exact way; the periodic potential is treated perturbatively. The Landau-Floquet states provide a convenient base with respect to which the lattice potential becomes time dependent, inducing transitions between the Landau-Floquet levels. Based on this formalism, we provide a Kubo-like formula that takes into account the oscillatory Floquet structure of the problem. The total longitudinal conductivity and resistivity exhibit strong oscillations, determined by ϵ = ω/ω(c), with ω the radiation frequency and ω(c) the cyclotron frequency. The oscillations follow a pattern with minima centred at [Formula: see text], and maxima centred at [Formula: see text], where j = 1,2,3..., δ∼1/5 is a constant shift and l is the dominant multipole contribution. Negative resistance states (NRSs) develop as the electron mobility and the intensity of the microwave power are increased. These NRSs appear in a narrow window region of values of the lattice parameter (a), around a∼l(B), where l(B) is the magnetic length. It is proposed that these phenomena may be observed in artificially fabricated arrays of periodic scatterers at the interface of ultraclean GaAs /Al(x)Ga(1-x)As heterostructures.

  14. Abrupt dependence of ultrafast extrinsic photoconductivity on Er fraction in GaAs:Er

    NASA Astrophysics Data System (ADS)

    Brown, E. R.; Mingardi, A.; Zhang, W.-D.; Feldman, A. D.; Harvey, T. E.; Mirin, R. P.

    2017-07-01

    We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-bandgap, resonant absorption around λ = 1550 nm in three MBE-grown GaAs epitaxial layers heavily doped with Er at concentrations of ≈2.9 × 1018 (control sample), 4.4 × 1020, and 8.8 × 1020 cm-3, respectively. Transmission-electron microscopy reveals lack of nanoparticles in the control sample, but abundant in the other two samples in the 1.0-to-3.0-nm-diameter range, which is consistent with the previously known results. We measure very high photoelectron (Hall) mobility (2.57 × 103 cm2/V-s) and terahertz power (46 μW average) in the 4.4 × 1020 sample, but then, an abrupt decay in these properties as well as the dark resistivity is seen as the Er doping is increased just 2 times. The Er doping has little effect on the picosecond-scale, 1550-nm photocarrier lifetime.

  15. Vectorial photocurrents and photoconductivity in metalized chloroplasts

    SciTech Connect

    Greenbaum, E. )

    1990-08-09

    A novel photobiophysical phenomenon was observed in isolated spinach chloroplasts that were metalized by precipitating colloidal platinum onto the surface of the thylakoid membranes. A two-point irradiation and detection system was constructed in which a continuous-beam helium-neon laser ({lambda} = 632.8 nm) was used to irradiate the platinized chloroplasts at varying perpendicular distances (Figure 1) from a single linear platinum electrode in pressure contact with the platinized chloroplasts. No external voltage bias was applied to the system. The key objective of the experiments reported in this report was to measure the relative photoconductivity of the chloroplast-metal composite matrix. Unlike conventional photosynthetic electrochemical cells, in which irradiated chloroplasts are in close proximity to an electrode or linked to the electrode by an electrode-active mediator, the flow of photocurrent was through the biocomposite material. A sustained steady-state vectorial flow of current in the plane of the entrapped composite from the point of laser irradiation to the wire electrode was measured.

  16. Study on Nonlinear Absorption Effect of Nanosecond Pulse Laser Irradiation for GaAs.

    PubMed

    Sun, Wenjun; Liu, Zhongyang; Zhou, Haijiao

    2016-04-01

    In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations. The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 10(10) W/cm2, free carrier absorption played a leading role and it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 10(8) W/cm2. The result is basically consistent with relevant experiments, which shows that physical model constructed is valid.

  17. High-Speed GaAs MESFET Memory Study.

    DTIC Science & Technology

    1981-07-01

    ne .. ’ a-d Id,devt h ,, 1 nu-.4511) Semiconductor Memory Enhancement-Mode MESFET Random Access Memory (RAM) GaAs Integrated Circuits (ICs) 4aAs...differential is reached. Figure 2-5 is a differential amplifier with a gain of %20 ( determined bv the gm.R 0 product of the FETs). This circuit has been...Write Mode Figure 2-9 shows the circuit that was Simulated to determine the transient write-mode reset response. The capacitors CB and CBB (0.2 pF each

  18. GaAs nanopillars by self-assembled droplet etching

    NASA Astrophysics Data System (ADS)

    Heyn, Ch.; Sonnenberg, D.; Bartsch, Th.; Wetzel, A.; Kerbst, J.; Hansen, W.

    2013-09-01

    GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force microscopy. Experimental pillar densities are analyzed using a scaling law. Furthermore, the thermal transport through ensembles of pillars is measured. The results show a clear correlation between the pillar density and the thermal conductivity which is several orders of magnitude reduced in comparison to the bulk.

  19. Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sun, Jian; Liu, Feng-Juan; Huang, Hai-Qin; Zhao, Jian-Wei; Hu, Zuo-Fu; Zhang, Xi-Qing; Wang, Yong-Sheng

    2010-11-01

    A metal-semiconductor-metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10 V bias, a responsivity of about 2.6 A/W at 370 nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient response measurement revealed photoresponse with a rise time of 10 ns and a fall time of 960 ns, respectively. The results are much faster than those reported in photoconductive detectors based on unintentionally doped n-type ZnO films.

  20. The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

    2017-06-01

    Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

  1. Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Kreuzer, Stephan; Wegscheider, Werner; Weiss, Dieter

    2001-06-01

    A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I-V measurements show a pronounced nonlinearity. Their variation with temperature depends strongly on the barrier thickness which is weak for the 6 nm barriers, a clear indication for quantum mechanical tunneling as the dominant transport channel.

  2. New developments in photoconductive detectors (invited)

    SciTech Connect

    Han, S.

    1997-01-01

    Nearly ideal for detecting ionizing radiation, wide band-gap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection, and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide band-gap semiconductors have progressed enormously. One particular wide band-gap semiconductor, diamond, has properties that may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films has become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diam is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond{close_quote}s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide band-gap semiconductors for ICF diagnostics will be presented. {copyright} {ital 1997 American Institute of Physics.}

  3. Instantaneous amplitude and frequency dynamics of coherent wave mixing in semiconductor quantum wells

    SciTech Connect

    Chemla, D.S.

    1993-06-30

    This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells.

  4. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  5. Doping-dependent THz photoconductivity in large-area graphene

    NASA Astrophysics Data System (ADS)

    Frenzel, Alex; Lui, Chun Hung; Shin, Yong Cheol; Kong, Jing; Gedik, Nuh

    2014-03-01

    We have performed a systematic investigation of the transient terahertz photoconductivity of large-area CVD graphene following femtosecond optical excitation as a function of electrically-tuned carrier density. We observe a dramatic change in the transient response as the photoconductivity changes from positive to negative when the Fermi level is tuned from the charge neutrality point to the electron or hole doped regime. This effect is discussed within the context of the Drude model for free carriers, taking into account the elevated electron and phonon temperatures in photoexcited graphene. Our results demonstrate that previous conflicting measurements of terahertz photoconductivity in epitaxial and CVD graphene arise primarily from their different doping levels. Additionally, our measurements provide a link between ultrafast optical experiments and DC photocurrent measurements.

  6. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    SciTech Connect

    Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo; Chen, Yan; Xia, Yidong; Xu, Xiaoyong; Hu, Jingguo

    2016-04-15

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  7. Chemistry related to semiconductor growth involving organometallics

    NASA Astrophysics Data System (ADS)

    Husk, G. R.; Jones, K. A.; Paur, R. J.; Prater, J. T.

    1990-05-01

    OMVPE (OrganoMetallic Vapor-Phase Epitaxy) technology requirements for III-V compounds and chemistry related to semiconductor growth involving organometallics are discussed. The following subject areas are covered: semiconductor device requirements; Army II-VI deposition program/MOMBE (Metal Organic Molecular Beam Epitaxy) for IR detector applications; epitaxial growth of III-V's and II-VI's using organometallics; electrical device requirements; environmental and safety issues in MOVPE; quantum chemistry of vapor phase; carbon doping and selective epitaxy (tailoring growth chemistry in MOVPE); TBA/TBP precursors in GaAs and InP MOCVD; single source precursors for III-V OMCVD (OrganoMetallic Chemical Vapor Deposition) growth; alternate sources for MOMBE of AlGaAs; mechanism of incorporation of impurities and analysis of carbon contamination; growth on nonplanar and patterned substrates; CBE growth mechanisms; TriMethylamine Alane (a new robust precursor for MOMBE growth of AlGaAs); real-time determinations of OMCVD growth kinetics on GaAs by reflectance-difference spectroscopy; photoreflectance measurements; growth and doping mechanisms for HgCdTe; photoassisted CBE (Chemical Beam Epitaxy) of CdTe and HgCdTe alloys; in-situ analysis of ZnSe growth by OMCVD using X-ray scattering; biodegradation of GaAs IC chips and wafers; detailed models of compound semiconductor growth by MOCVD; gas phase probes of GaAs cluster chemistry; photodecomposition of organometallic compounds at 193 nm; manufacturing issues in MOCVD compound semiconductor technology.

  8. Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling

    NASA Astrophysics Data System (ADS)

    Zhou, J. K.; Wang, T.; Wang, W.; Chen, S. W.; Cao, Y.; Liu, H. P.; Si, M. S.; Gao, C. X.; Yang, D. Z.; Xue, D. S.

    2016-12-01

    To control the semiconductor device under low magnetic field is still a great challenge for semiconductor magnetoelectronics. In this work, we report the observation of the magneto-photogalvanic effect in periodic GaAs dot arrays. With an increase in magnetic field from 0 to 1500 Oe, the photovoltage increases linearly for a wide temperature range from 80 to 430 K. Compared with GaAs without the dot arrays, periodic GaAs dot arrays have a hundredfold increase of the magnetic-field-modulated photovoltage at room temperature. By changing the magnetic field orientation, the angular dependence of photovoltage reveals that the magneto-photogalvanic effect stems from the Hall electric field caused by optical current, and the enhancement of magneto-photogalvanic effect is attributed to the p-n junction coupling between GaAs dots. When the coupling between the GaAs dots is broken at the high temperatures, i.e., T = 430 K, we demonstrate that the enhancement effect disappears as expected. Our results not only illustrate the magnetic control of energy flow in light harvest, but also provide an applicable way for semiconductor magnetoelectronics by utilizing p-n junction coupling.

  9. Luminescence and photoconductivity of high-purity cadmium selenide

    SciTech Connect

    Martynov, V.N.

    1995-10-01

    Slightly off-stoichlometric high-purity cadmium and zinc chalcogenides are used as high-efficiency sensors in various optoelectronic devices. The procedure for preparing high-purity chalcogenides was described elsewhere. Such materials (wurtzite-type structure, sp. gr. C{sup 4}{sub 6v}) exhibit exciton luminescence and the photoconductivity associated with the A-, B-, and C-excitonic series over a wide temperature range. In this work, we studied the luminescence and photoconductivity (PC) of cadmium selenide prepared as described.

  10. Fracture mechanics evaluation of GaAs

    NASA Technical Reports Server (NTRS)

    Chen, C. P.

    1984-01-01

    A data base of mechanical and fracture properties for GaAs was generated. The data for single crystal GaAs will be used to design reusable GaAs solar modules. Database information includes; (1) physical property characterizations; (2) fracture behavior evaluations; and (3) strength of cells determined as a function of cell processing and material parameters.

  11. Characterization of metallic adatoms on GaAs

    NASA Astrophysics Data System (ADS)

    Gohlke, David; Gupta, Jay

    2012-04-01

    As semiconductor nanostructures become smaller, defects play an ever-increasing role in systems of interest. Scanning tunneling microscopy (STM) can be used to probe and manipulate systems on the atomic scale. For exceptionally clean systems, we study our samples at low-temperature (5K) and ultra-high vacuum (UHV). Here we examine the properties of charged atoms on the surface of the semiconductor gallium arsenide (GaAs). We determine the binding site and charge of these adatoms, and use this information to tune the energy levels of electron acceptors in the surface. Funding for this research was provided by the Center for Emergent Materials at the Ohio State University, an NSF MRSEC (Award Number DMR-0820414). http://www.physics.ohio-state.edu/˜jgupta/

  12. Tunneling recombination and the photoconductivity of amorphous silicon in the temperature region around 100 K

    NASA Astrophysics Data System (ADS)

    Zhou, J.-H.; Elliott, S. R.

    1993-07-01

    This paper proposes an interpretation of the photoconductivity of a-Si:H in the temperature region between app 50- and app 150- K, where the photoconductivity increases rapidly with temperature and usually exhibits a thermally activated behavior. In this model, the recombination takes place by direct tunneling between electrons and holes trapped in the band tails, whereas the photoconductivity is due to electron conduction in extended states. It is shown that this model can account for all the general features exhibited by the photoconductivity of a-Si:H in the low-temperature region, although the magnitude of the photoconductivity predicted by the model tends to be larger than that measured.

  13. Kinetics of photoconductivity in ZnSe crystals upon photoexcitation of deep centers

    SciTech Connect

    Bruk, L.I.; Gorya, O.S.; Korotkov, V.A.

    1995-10-01

    It has long been known that investigation of the spectral characteristics of photoconductivity (PC) in wide-band-gap semiconductors does not provide full information on the position of photosensitive centers in the forbidden band. The broad spectrum of intrinsic and impurity PC consists of several overlapping bands. In the long-wavelength region, impurity photoeffect is superimposed over the falling-off spectrum of intrinsic PC. In addition, measurements of steady-state PC are incapable of revealing photoinsensitive recombination and trapping centers. Those levels that were not excited prior to illumination of the semiconductor may provide no contribution to PC and may appear either photoinsensitive or indistinguishable from dominant channels of recombination and trapping on other centers. Preliminary excitation may alter the state of these levels to such a degree that they will show up as a spike in the PC relaxation curve. In this paper, we report kinetic studies of the PC and the effective cross section for photon capture (CSPC) in the photosensitivity range of zinc selenide single crystals containing trace impurities.

  14. Large electroabsorption susceptibility mediated by internal photoconductive gain in Ge nanowires.

    PubMed

    Lee, Hyun-Seung; Kim, Cheol-Joo; Lee, Donghun; Lee, Ru Ri; Kang, Kibum; Hwang, Inchan; Jo, Moon-Ho

    2012-11-14

    Large spectral modulation in the photon-to-electron conversion near the absorption band-edge of a semiconductor by an applied electrical field can be a basis for efficient electro-optical modulators. This electro-absorption effect in Group IV semiconductors is, however, inherently weak, and this poses the technological challenges for their electro-photonic integration. Here we report unprecedentedly large electro-absorption susceptibility at the direct band-edge of intrinsic Ge nanowire (NW) photodetectors, which is strongly diameter-dependent. We provide evidence that the large spectral shift at the 1.55 μm wavelength, enhanced up to 20 times larger than Ge bulk crystals, is attributed to the internal Franz-Keldysh effect across the NW surface field of ~10(5) V/cm, mediated by the strong photoconductive gain. This classical size-effect operating at the nanometer scale is universal, regardless of the choice of materials, and thus suggests general implications for the monolithic integration of Group IV photonic circuits.

  15. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    NASA Astrophysics Data System (ADS)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  16. Glad nanostructured arrays with enhanced carrier collection and light trapping for photoconductive and photovoltaic device applications

    NASA Astrophysics Data System (ADS)

    Cansizoglu, Hilal

    Solar energy harvesting has been of great interest for researchers over the past 50 years. Main emphasis has been on developing high quality materials with low defect density and proper band gaps. However, high cost of bulk materials and insufficient light absorption in thin films led to utilization of semiconductor nanostructures in photovoltaics and photonics. Light trapping abilities of nanostructures can provide high optical absorption whereas core/shell nanostructured arrays can allow enhanced charge carrier collection. However, most of the nanofabrication methods that can produce uniform nanostructure geometries are limited in materials, dimensions, and not compatible with industrial production systems. Therefore, it is essential to develop innovative low-cost fabrication approaches that can address these issues. The primary goal of this project is to investigate light trapping and carrier collection properties of glancing angle deposited (GLAD) nanostructured arrays for high-efficiency, low-cost photoconductive and photovoltaic devices using characterization techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible-near infrared (UV-vis-NIR) spectroscopy and time resolved photocurrent measurements. Indium sulfide (In2S3) has been chosen as a model material system in this study. GLAD nanostructured arrays of vertical rods, screws, springs, zigzags and tilted rods were fabricated and characterized. A strong dependence of optical absorption on the shapes of nanostructures is observed from UV-vis-NIR spectroscopy. A simulation study using finite difference time domain (FDTD) shows that introducing 3D geometry results in diffuse scattering of light and leads to high optical absorption. Monte Carlo simulations were conducted to determine a simple and scalable fabrication technique for conformal and uniform shell coatings. The results suggest that an atomic flux with angular distribution, which can be

  17. GaAs Computer Technology

    DTIC Science & Technology

    1992-01-07

    AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...SCIENCE AND DO NOT NECESSARILY REFLECT THE POSITION OR TECHNOLOGY CENiER OPINION OF THE FOREIGN AEROSPACE SCIENCE AND WPAFB, OHIO TECHNOLOGY CENTER

  18. Coexistence of electron-glass phase and persistent photoconductivity in GeSbTe compounds

    NASA Astrophysics Data System (ADS)

    Ovadyahu, Z.

    2015-03-01

    It is demonstrated that persistent photoconductivity (PPC), well studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low levels of energy flux necessary to induce an appreciable effect seems surprising given the high carrier concentration n of these ternary alloys (n >1020cm-3 ). On the other hand, their high density of carriers makes GeSbTe films favorable candidates for exhibiting intrinsic electron-glass effects with long relaxation times. These are indeed observed in GeSbTe thin films that are Anderson-localized. In particular, a memory dip is observed in samples with sheet resistances larger than ≈105Ω at T ≈4 K with similar characteristics as in other systems that exhibit intrinsic electron-glass effects. Persistent photoconductivity, however, is observable in GeSbTe films even for sheet resistances of the order of 103Ω , well below the range of disorder required for observing electron-glass effects. These two nonequilibrium phenomena, PPC and electron glass, are shown to be of different nature in terms of other aspects as well. In particular, their relaxation dynamics is qualitatively different; the excess conductance Δ G associated with PPC decays with time as a stretched exponential whereas a logarithmic relaxation law characterizes Δ G (t ) of all electron glasses studied to date. Surprisingly, the magnitude of the memory dip is enhanced when the system is in the PPC state. This counter-intuitive result may be related to the compositional disorder in these materials extending over mesoscopic scales. Evidence in support of this scenario is presented and discussed.

  19. Optical Real Time Signal Processors and Semiconductor Surface and Semiconductor-Electrolyte Interface Study Using Acoustic Surface Wave.

    DTIC Science & Technology

    1981-08-01

    Resistivity GaAs", J. Appl. Phys., Vol. 50, pp. 4942-4950, 1979. Copies of the papers are available upon request. 2 5. J . Scott Moore and P. Das, "The...Papers presented with support from the contract 1. J . Scott Moore and P. Das, "Hot Electron Effects in Quasi-Two Dimensional Semiconductors

  20. Ultrathin MgO diffusion barriers for ferromagnetic electrodes on GaAs(001).

    PubMed

    Sarkar, Anirban; Wang, Shibo; Grafeneder, Wolfgang; Arndt, Martin; Koch, Reinhold

    2015-04-24

    Ultrathin MgO(100) films serving as a diffusion barrier between ferromagnetic electrodes and GaAs(001) semiconductor templates have been investigated. Using Fe as an exemplary ferromagnetic material, heterostructures of Fe/MgO/GaAs(001) were prepared at 200 °C with the MgO thickness ranging from 1.5 to 3 nm. Structural characterization reveals very good crystalline ordering in all layers of the heterostructure. Auger electron spectroscopy depth-profiling and cross-sectional high-resolution transmission electron microscopy evidence diffusion of Fe into MgO and-for too thin MgO barriers-further into GaAs(001). Our results recommend a MgO barrier thickness larger than or equal to 2.6 nm for its application as a reliable diffusion barrier on GaAs(001) in spintronics devices.

  1. Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

    NASA Astrophysics Data System (ADS)

    Bergamaschini, Roberto; Bietti, Sergio; Castellano, Andrea; Frigeri, Cesare; Falub, Claudiu V.; Scaccabarozzi, Andrea; Bollani, Monica; von Känel, Hans; Miglio, Leo; Sanguinetti, Stefano

    2016-12-01

    Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam Epitaxy. The evolution of crystal morphology during growth is assessed by considering samples with increasing GaAs deposit thickness. Experimental results are interpreted by a kinetic growth model, which takes into account the fundamental aspects of the growth and mutual deposition flux shielding between neighboring crystals. Different substrate pattern geometries with dissimilar lateral sizes and periodicities of the Si micro-pillars are considered and self-similar crystal structures are recognized. It is demonstrated that the top faceting of the GaAs crystals is tunable, which can pave the way to locally engineer compound semiconductor quantum structures on Si(001) substrates.

  2. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.

  3. Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.

    PubMed

    Dong, Angang; Yu, Heng; Wang, Fudong; Buhro, William E

    2008-05-07

    Colloidal GaAs quantum wires with diameters of 5-11 nm and narrow diameter distributions (standard deviation = 12-21% of the mean diameter) are grown by two methods based on the solution-liquid-solid (SLS) mechanism. Resolved excitonic absorption features arising from GaAs quantum wires are detected, allowing extraction of the size-dependent effective band gaps of the wires. The results allow the first systematic comparison of the size dependences of the effective band gaps in corresponding sets of semiconductor quantum wires and quantum wells. The GaAs quantum wire and well band gaps scale according to the prediction of a simple effective-mass-approximation, particle-in-a-box (EMA-PIB) model, which estimates the kinetic confinement energies of electron-hole pairs in quantum nanostructures of different shapes and confinement dimensionalities.

  4. High-gain GaAs MSM photodetector

    NASA Astrophysics Data System (ADS)

    Karulkar, V. T.; Purandare, S. C.; Srivastava, Atul K.; Arora, B. M.

    1992-12-01

    Photodetectors with metal-semiconductor -metal (MSM) structures having very high quan turn efficiency are investigated to identify the gain mechanism. From the temperature dependence studies impact ionisation of carriers in a region under the edge of the cathode is shown to be the predominant gain mechanism. Metal-Semiconductors-Metal (MSM) structure has recently emerged" 2 as an attractive device for photodetection due to its simple planar tech nology which can be easily adapted to optoelec tronic integration. The other features of MSM photodetector are their high sensitivity, low capacitance, low dark current and high speed. Substatial amount of work has been done on GaAs MSM photodiodes which are useful in near infrared wavelength regime. Devices with very low dark current (lOOpA at 1OV for 200x200pm geometry) and low rise and fall times (23 and 55 ps respecti vely) have been recently fabricated on semi-insu lating (SI) GaAs substrates1. The other interest ing feature of MSM structure is that it has in ternal gain. Despite intensive study of these devices there is still confusion about the physi cal origin of the gain in these devices. Ito et a13 attribute the gain to hole injection at the forward biased anode contact. Measurements of Zirngibl et al however, point to avalanche mechanism of gain in these devices. In this paper we report the results of experimental in vestigation of gain mechanism in GaAs MSM struc tures which have extremely high gain (100).

  5. Alignment enhanced photoconductivity in single wall carbon nanotube films.

    PubMed

    Liu, Ye; Lu, Shaoxin; Panchapakesan, Balaji

    2009-01-21

    In this paper we report, for the first time, the alignment enhanced photoconductivity of single wall carbon nanotube films upon laser illumination. The photoconductivity exhibited an increase, decrease or even 'negative' values when the laser spot was on different positions between contact electrodes, showing a 'position' dependent photoconductivity of partially aligned films of carbon nanotubes. Photon induced charge carrier generation in single wall carbon nanotubes and subsequent charge separation across the metal-carbon nanotube contacts is believed to cause the photoconductivity changes. A net photovoltage of approximately 4 mV and a photocurrent of approximately 10 microA were produced under the laser intensity of approximately 273 mW with a quantum efficiency of approximately 7.8% in vacuum. The photocurrent was observed to be in the direction of nanotube alignment. Finally, there was a strong dependence of the polarization of the incident light on the photocurrent and the orientation of the films influenced the dynamics of the rise and fall of the photocurrent. All of these phenomena clearly have significance in the area of design and fabrication of solar cells, micro-opto-mechanical systems and photodetectors based on carbon nanotubes.

  6. Metal nanoparticles triggered persistent negative photoconductivity in silk protein hydrogels.

    PubMed

    Gogurla, Narendar; Sinha, Arun K; Naskar, Deboki; Kundu, Subhas C; Ray, Samit K

    2016-04-14

    Silk protein is a natural biopolymer with intriguing properties, which are attractive for next generation bio-integrated electronic and photonic devices. Here, we demonstrate the negative photoconductive response of Bombyx mori silk protein fibroin hydrogels, triggered by Au nanoparticles. The room temperature electrical conductivity of Au-silk hydrogels is found to be enhanced with the incorporation of Au nanoparticles over the control sample, due to the increased charge transporting networks within the hydrogel. Au-silk lateral photoconductor devices show a unique negative photoconductive response under an illumination of 325 nm, with excitation energy higher than the characteristic metal plasmon resonance band. The enhanced photoconductance yield in the hydrogels over the silk protein is attributed to the photo-oxidation of amino groups in the β-pleated sheets of the silk around the Au nanoparticles followed by the breaking of charge transport networks. The Au-silk nanocomposite does not show any photoresponse under visible illumination because of the localization of excited charges in Au nanoparticles. The negative photoconductive response of hybrid Au-silk under UV illumination may pave the way towards the utilization of silk for future bio-photonic devices using metal nanoparticle platforms.

  7. Metal nanoparticles triggered persistent negative photoconductivity in silk protein hydrogels

    NASA Astrophysics Data System (ADS)

    Gogurla, Narendar; Sinha, Arun K.; Naskar, Deboki; Kundu, Subhas C.; Ray, Samit K.

    2016-03-01

    Silk protein is a natural biopolymer with intriguing properties, which are attractive for next generation bio-integrated electronic and photonic devices. Here, we demonstrate the negative photoconductive response of Bombyx mori silk protein fibroin hydrogels, triggered by Au nanoparticles. The room temperature electrical conductivity of Au-silk hydrogels is found to be enhanced with the incorporation of Au nanoparticles over the control sample, due to the increased charge transporting networks within the hydrogel. Au-silk lateral photoconductor devices show a unique negative photoconductive response under an illumination of 325 nm, with excitation energy higher than the characteristic metal plasmon resonance band. The enhanced photoconductance yield in the hydrogels over the silk protein is attributed to the photo-oxidation of amino groups in the β-pleated sheets of the silk around the Au nanoparticles followed by the breaking of charge transport networks. The Au-silk nanocomposite does not show any photoresponse under visible illumination because of the localization of excited charges in Au nanoparticles. The negative photoconductive response of hybrid Au-silk under UV illumination may pave the way towards the utilization of silk for future bio-photonic devices using metal nanoparticle platforms.

  8. Theoretical Calculations Supporting Investigation of Metal Contacts to Ultra-Small Semiconductor Structures,

    DTIC Science & Technology

    1985-10-01

    THEORETICAL CALCULATIONS SUPPORTING INVESTIGATION OF M4ETAL CONTACTS TO ULTRA-SHALL SEMICONDUCTOR STRUCTURES by0 F.Flores, G.Platero, J.SAnchez-Dehesa...distribution unlimited 86 1 1,5 04 7 THEORETICAL CALCULATIONS SUPPORTING INVESTIGATIONr OF METAL CONTACTS TO ULTRA-SMALL SEMICONDUCTOR STRUCTURES by...34Anion induced surface states for the ideal (100)-faces of GaAs, AlAs and GaSb" 3. Paper No.2: "Electronic structure of (100)- semiconductor

  9. Some Aspects of Photoconductivity in Zinc Oxide

    DTIC Science & Technology

    1952-01-25

    the room to liquid air temperature range* >• ULfoattfy-* niWi H a .te^u*^•«-’""’^’’’^^ id Si £3* II» y^otog.ongujgjbl^’ty. of Zinc-Oxidei...varlpus insulators, evg.. HaCI, •Ü-. &i KOlj AgCI, and semiconductors, e,g«, CuO> Si * Ge, PbS, hus been furthered by the study of tto phoboconductive...dlseusoiuju uy § Rose20 on the effects of trapping and small capture cross section in hindering ’-n sß p;?-SB (, SI ’ recombination, and

  10. The development and characterization of neutron-damaged GaAs x-ray detectors

    SciTech Connect

    Springer, P.T.

    1988-09-09

    Photoconductive x-ray detectors are becoming an important x-ray diagnostic as a result of their small size, fast response time, and high sensitivity. We are developing a discrete array of neutron- damaged GaAs detectors to be used in an imaging x-ray spectrometer, and we describe herein the techniques we use to fabricate and characterize them for an upcoming experiment. Using a 225-ps x-ray pulse from a laser-produced plasma, we measured the sensitivity and time response of the detectors to be 7.1 mA/W and on the order of 150 ps FWHM, respectively. The carrier mobility is 741 cm/sup 2//V/center dot/s at a bias of 2 /times/ 10/sup 4/V/cm. 6 figs.

  11. Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic GaAs1- x P x Ternary Alloys Under Hydrostatic Pressure

    NASA Astrophysics Data System (ADS)

    Moussa, R.; Abdiche, A.; Abbar, B.; Guemou, M.; Riane, R.; Murtaza, G.; Omran, SAAD Bin; Khenata, R.; Soyalp, F.

    2015-12-01

    The structural, electronic and optical properties of the GaAs1- x P x ternary alloys together with their binary GaP and GaAs compounds were investigated in the zinc-blende (ZB) phase using the density functional theory. The lattice constant of the GaAs compound decreases while its bulk modulus increases when the doping concentration of the P dopant is increased. In addition, both parameters (lattice constant and bulk modulus) show small deviations from the linear concentration dependence. The energy band gap of the GaAs compound is of the direct nature, which increases with the increase in the P dopant concentration, whereas at higher P dopant concentration, the band gap shifts from direct to indirect character. On the other hand, the hydrostatic pressure has a significant effect on the band structure of the investigated compounds where the binary GaAs compound changes from a direct band gap semiconductor to an indirect band gap semiconductor at P ≥ 5 GPa. Furthermore, the pressure-dependence of the optical properties of the GaAs, GaP and GaAs0.75P0.25 alloy were also investigated, where the calculated zero frequency refractive index and the dielectric function are also compared with the experimental results as well as with different empirical models.

  12. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  13. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  14. Growth and properties of crystalline barium oxide on the GaAs(100) substrate

    SciTech Connect

    Yasir, M.; Dahl, J.; Lång, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P. Kokko, K.; Kuzmin, M.; Korpijärvi, V.-M.; Polojärvi, V.; Guina, M.

    2013-11-04

    Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.

  15. Effect of temperature on (TV) statics characteristics of GaAs Mesfet

    NASA Astrophysics Data System (ADS)

    Fares, Z.; Saidi, Y.; Aliouat, W.

    2016-10-01

    The GaAs metal semiconductor field effect transistors called mesfets are the most active components used in microwave applications. To better exploit the performance of these components circuits, it is necessary to develop techniques for sophisticated numerical computation based on physical mechanisms that govern the operation of these devices. The static properties of GaAs MESFET could be determined from an original analytical study based on the resolution of the semiconductor fundamental equations. Then we will study the equation of thermal resistance as a function of the physical parameters of MESFETs by analogy electric thermal resistance RTH will be determined as the ratio of the difference of temperature on the thermal dissipation. The model took into account the difference between the temperature of the component and the ambient temperature and the effect of temperature on the parameters of the component.

  16. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules.

  17. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  18. n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

    PubMed Central

    2011-01-01

    In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices. PMID:27502686

  19. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  20. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    NASA Astrophysics Data System (ADS)

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-01

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes.

  1. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters.

    PubMed

    Vazhappilly, Tijo; Hembree, Robert H; Micha, David A

    2016-01-14

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes.

  2. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    SciTech Connect

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-14

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes.

  3. Light confinement and absorption in metal-semiconductor-metal nanostructures

    NASA Astrophysics Data System (ADS)

    Collin, Stephane; Pardo, Fabrice; Teissier, Roland; Bardou, Nathalie; Dupuis, Christophe; Mahe, Ronan; Ferlazzo, Laurence; Cambril, Edmond; Thierry-Mieg, Veronique; Lemaitre, Aristide; Pelouard, Jean-Luc

    2005-04-01

    New concepts for efficient light absorption in nanoscale metal-semiconductor-metal photodetectors are analyzed from both theoretical and experimental point of view. They are based on sub-wavelength metallic gratings which allows light confinement in tiny volumes (< 100 nm) close to electrodes (< 100 nm). Two photodetector structures are proposed: (i) a resonant-cavity-enhanced subwavelength metal-semiconductor-metal photodetector, and (ii) a nanoscale metal-semiconductor grating photodetector. External quantum efficiency as high as 9 % has been obtained in 40 x 100 nm2 cross-section GaAs wires, limited by fabrication technology. These results show promising features for highly efficient and ultrafast photodetectors.

  4. Electron microscopy of GaAs Structures with InAs and as quantum dots

    SciTech Connect

    Nevedomskii, V. N.; Bert, N. A. Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2011-12-15

    An electron-microscopy study of GaAs structures, grown by molecular-beam epitaxy, containing two coupled layers of InAs semiconductor quantum dots (QDs) overgrown with a thin buffer GaAs layer and a layer of low-temperature-grown gallium arsenide has been performed. In subsequent annealing, an array of As nanoinclusions (metallic QDs) was formed in the low-temperature-grown GaAs layer. The variation in the microstructure of the samples during temperature and annealing conditions was examined. It was found that, at comparatively low annealing temperatures (400-500 Degree-Sign C), the formation of the As metallic QDs array weakly depends on whether InAs semiconductor QDs are present in the preceding layers or not. In this case, the As metallic QDs have a characteristic size of about 2-3 nm upon annealing at 400 Degree-Sign C and 4-5 nm upon annealing at 500 Degree-Sign C for 15 min. Annealing at 600 Degree-Sign C for 15 min in the growth setup leads to a coarsening of the As metallic QDs to 8-9 nm and to the formation of groups of such QDs in the area of the low-temperature-grown GaAs which is directly adjacent to the buffer layer separating the InAs semiconductor QDs. A more prolonged annealing at an elevated temperature (760 Degree-Sign C) in an atmosphere of hydrogen causes a further increase in the As metallic QDs' size to 20-25 nm and their spatial displacement into the region between the coupled InAs semiconductor QDs.

  5. Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors.

    DTIC Science & Technology

    1982-01-01

    the Ill-V semiconductors with large spin -orbit splitting . These included GaAs, G&Sb, InAs, AlSb as w ll as Ge. The theory was further extended to...includle Lhe effects of the spin orbit split -off valence band in publication 12. E. 7hory of Pump and Probe Experiments To develop an understanding of the...James and D. L. Smith, "Absorption of High-Intensity 002 Laser Light in p-Type Semiconductors with Small Spin -Orbit Splittings ", J. Appi. Phys. S2

  6. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  7. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  8. Shallow-Lever Centers in Semiconductors - Proceedings of the 7th International Conference

    NASA Astrophysics Data System (ADS)

    Ammerlaan, C. A. J.; Pajot, B.

    1997-04-01

    Quantum Well Structures Grown by MBE * Shallow Centers in Heavily Doped Silicon Quantum Wells * Optically Detected Resonance Spectroscopy of III-V and II-VI Quantum Wells * Shallow Thermal Donor Defects in Silicon * Pressure Dependence of Se Absorption Lines in AlSb * Fine Structure in the Magnetic Resonance of Single Acceptors in Silicon * Far-Infrared Photoconductivity and Photoluminescence of Beryllium in Gallium Arsenide * Shift of Photoluminescence Peak in Highly Self-Compensated Ge-Doped GaAs * Electron-Phonon Coupling in a Delta-Doped n-i-p Structure in GaAs * Group-III and Group-II Quasi-Deep Impurities in Silicon Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies * Resonance Acceptor States in Uniaxially Strained Semiconductors * Donor-Related Infrared-Absorption Spectra of GaAs-(Ga, Al)As Quantum Wells * Electrical Properties of Shallow Donor Centers Formed Due to Oxygen Interaction with Chemically Active Impurities in Heat-Treated Silicon * Fine Structure and Higher Lying Transitions of Er3+ in 4H and 6H SiC * Mechanism for the Enhanced Dissociation of C-H Complexes in GaAs * Bistability and Metastability of Hydrogen in Si * EPR of Aluminum-Aluminum Interstitial Pair in Silicon * Magnetic Order of Shallow Acceptor Centres in Semiconductors (InSb:Mn) * Luminescence and DLTS Study of Photonuclear Transmutation Doped (PND) Gallium Arsenide * Photoluminescence of Deformed Bulk Crystals of Si-Ge Alloy * Di-Oxygen Complex in Silicon: Some New Characteristic Features * Reactions of Interstitial Iron with Shallow Acceptors in Silicon * The 819.8 meV Photoluminescence Band in Copper Doped Silicon * Zeeman Spectroscopy of Aluminium in Germanium * Microscopic Studies of the Hydrogen Passivation in n-Type Silicon: A New Application of the 73As γ-e- PAC Technique * Shallow Donor Solubility Mechanism: Tellurium in GaAs * Energy Levels of Shallow Donor Pairs and Thermal Double Donors in Silicon * Boron Neutralization by Hydrogen in

  9. Band parameters for GaAs and Si in the 24-k sdot p model

    NASA Astrophysics Data System (ADS)

    Zitouni, O.; Boujdaria, K.; Bouchriha, H.

    2005-09-01

    A 24-k sdot p model is used to compute the principal effective-mass parameters at Γ, X and L valleys in a direct-band-gap semiconductor (GaAs) as well as an indirect-band-gap semiconductor (Si). The values of the effective masses for electrons, heavy holes and light holes in the Γ, X and L valleys are in very good agreement with those reported in other publications. Satisfactory agreement with available experimental data is also obtained by this model. The Luttinger parameters and interband momentum matrix elements proposed in this work are consistent with the previous publications.

  10. Spectroscopic constants and potential energy curves of GaAs, GaAs +, and GaAs -

    NASA Astrophysics Data System (ADS)

    Balasubramanian, K.

    1990-02-01

    Twenty electronic states of GaAs, 12 electronic states of GaAs +, and 13 electronic states of GaAs - are investigated using relativistic ab initio complete active space MCSCF (CASSCF) followed by large-scale configuration interaction calculations which included up to 700 000 configurations. Potential energy curves and spectroscopic constants of all these states of three radicals are obtained. Spectroscopic constants of low-lying states of GaAs are in very good agreement with both experiment and all-electron results. Two nearly-degenerate states of 2Σ +, 2Π ( 2Σ + lower) symmetries are found as candidates for the ground state of GaAs -. The GaAs - negative ion is found to be more stable compared to the neutral GaAs ( De(GaAs -) = 3 eV). The electron affinity of GaAs is computed as 0.89 and 1.3 eV at the FOCI and SOCI levels of theory, respectively. Calculated potential energy curves of GaAs are in accord with the experimentally observed predissociation in the 3Π( III) - X3Σ- system.

  11. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  12. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  13. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  14. On-surface formation of metal nanowire transparent top electrodes on CdSe nanowire array-based photoconductive devices.

    PubMed

    Azulai, Daniel; Givan, Uri; Shpaisman, Nava; Belenkova, Tatyana Levi; Gilon, Hagit; Patolsky, Fernando; Markovich, Gil

    2012-06-27

    A simple wet chemical approach was developed for a unique on-surface synthesis of transparent conductive films consisting of ultrathin gold/silver nanowires directly grown on top of CdSe nanowire array photoconductive devices enclosed in polycarbonate membranes. The metal nanowire film formed an ohmic contact to the semiconductor nanowires without additional treatment. The sheet resistance and transparency of the metal nanowire arrays could be controlled by the number of metal nanowire layers deposited, ranging from ∼98-99% transmission through the visible range and several kOhm/sq sheet resistance for a single layer, to 80-85% transmission and ∼100 Ohm/sq sheet resistance for 4 layers.

  15. Reduced photoconductivity observed by time-resolved terahertz spectroscopy in metal nanofilms with and without adhesion layers

    SciTech Connect

    Alberding, Brian G.; Heilweil, Edwin J.; Kushto, Gary P.; Lane, Paul A.

    2016-05-30

    Non-contact, optical time-resolved terahertz spectroscopy has been used to study the transient photoconductivity of nanometer-scale metallic films deposited on the fused quartz substrates. Samples of 8 nm thick gold or titanium show an instrument-limited (ca. 0.5 ps) decrease in conductivity following photoexcitation due to electron-phonon coupling and subsequent increased lattice temperatures which increases charge carrier scattering. In contrast, for samples of 8 nm gold with a 4 nm adhesion layer of titanium or chromium, a ca. 70 ps rise time for the lattice temperature increase is observed. These results establish the increased transient terahertz transmission sign change of metallic compared to semiconductor materials. The results also suggest nanoscale gold films that utilize an adhesion material do not consist of distinct layers.

  16. High density semiconductor nanodots by direct laser fabrication

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  17. Collective excitations of spherical semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-10-01

    In this article, we study the dispersion properties of bulk and surface electrostatic oscillations of a spherical quantum electron-hole semiconductor plasma as a simple model of a semiconductor nanoparticle. We derive general dispersion relation for both bulk and surface modes, using quantum hydrodynamic theory (including the electrons and holes quantum recoil effects, quantum statistical pressures of the plasma species, as well as exchange and correlation effects) in conjunction with Poisson’s equation and appropriate boundary conditions. We show that for the arbitrary value of angular quantum number {\\ell }≥slant 1 there are only two surface plasmon modes, but two infinite series of bulk modes for {\\ell }≥slant 0 that owe their existence to the curvature of the interface. We use the typical values of GaAs semiconductor to compute the bulk and surface mode frequencies for different value of {\\ell }.

  18. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

    SciTech Connect

    Kozlov, D. V. Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M.; Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A.; Gavrilenko, V. I.; Teppe, F.

    2015-12-15

    The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

  19. A band model for melanin deducted from optical absorption and photoconductivity experiments.

    PubMed

    Crippa, P R; Cristofoletti, V; Romeo, N

    1978-01-03

    Natural and synthetic melanins have been studied by optical absorption and photoconductivity measurements in the range 200--700 nm. Both optical absorption and photoconductivity increase in the ultraviolet region, and a negative photoconductivity was observed with a maximum near 500 nm. This behaviour has been interpreted by the band model of amorphous materials and an "optical gap" of 3.4 eV has been determined.

  20. Photoconductive Cathode Interlayer for Highly Efficient Inverted Polymer Solar Cells.

    PubMed

    Nian, Li; Zhang, Wenqiang; Zhu, Na; Liu, Linlin; Xie, Zengqi; Wu, Hongbin; Würthner, Frank; Ma, Yuguang

    2015-06-10

    A highly photoconductive cathode interlayer was achieved by doping a 1 wt % light absorber, such as perylene bisimide, into a ZnO thin film, which absorbs a very small amount of light but shows highly increased conductivity of 4.50 × 10(-3) S/m under sunlight. Photovoltaic devices based on this kind of photoactive cathode interlayer exhibit significantly improved device performance, which is rather insensitive to the thickness of the cathode interlayer over a broad range. Moreover, a power conversion efficiency as high as 10.5% was obtained by incorporation of our photoconductive cathode interlayer with the PTB7-Th:PC71BM active layer, which is one of the best results for single-junction polymer solar cells.

  1. Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

    PubMed Central

    2009-01-01

    The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state. PMID:20652149

  2. Improving Photoconductance of Fluorinated Donors with Fluorinated Acceptors

    SciTech Connect

    Garner, Logan E.; Larson, Bryon; Oosterhout, Stefan; Owczarczyk, Zbyslaw; Olson, Dana C.; Kopidakis, Nikos; Boltalina, Olga V.; Strauss, Steven H.; Braunecker, Wade A.

    2016-11-21

    This work investigates the influence of fluorination of both donor and acceptor materials on the generation of free charge carriers in small molecule donor/fullerene acceptor BHJ OPV active layers. A fluorinated and non-fluorinated small molecule analogue were synthesized and their optoelectronic properties characterized. The intrinsic photoconductance of blends of these small molecule donors was investigated using time-resolved microwave conductivity. Blends of the two donor molecules with a traditional non-fluorinated fullerene (PC70BM) as well as a fluorinated fullerene (C60(CF3)2-1) were investigated using 5% and 50% fullerene loading. We demonstrate for the first time that photoconductance in a 50:50 donor:acceptor BHJ blend using a fluorinated fullerene can actually be improved relative to a traditional non-fluorinated fullerene by fluorinating the donor molecule as well.

  3. Photoconductivities in anatase TiO{sub 2} nanorods

    SciTech Connect

    Chen, Ruei-San; Liu, Yi-Ling; Chan, Ching-Hsiang; Huang, Ying-Sheng

    2014-10-13

    The photoconduction (PC) properties of single-crystalline titanium dioxide (TiO{sub 2}) nanorods (NRs) with anatase phase were investigated and compared. By examining the material's inherent properties, the anatase TiO{sub 2} NRs exhibit superior PC efficiency (quantitatively defined by normalized gain) which is near one order of magnitude higher than that of the rutile ones. The optimal photoconductive gain of the anatase NR device can also reach 1.6 × 10{sup 7} at the light intensity of 0.02 Wm{sup −2} and a low bias of 0.1 V. The power-dependent and time-resolved PC measurements were performed to investigate the physical mechanisms. The higher quantum efficiency and mobility product was confirmed to be responsible for the higher PC efficiency in the anatase TiO{sub 2} NRs in comparison to the rutile ones.

  4. T-ray profile synthesis using photoconductive emitter array

    NASA Astrophysics Data System (ADS)

    Hattori, Toshiaki; Masuda, Masayoshi; Sakamoto, Masaya; Egawa, Kazuhiro; Itatani, Taro; Ohi, Akihiko

    2007-09-01

    We have observed coherent synthesis of spatial profiles of THz radiation emitted from a photoconductive antenna array. The antenna array is composed of seven independently addressable photoconductive antenna units having interdigitated electrodes. The antennas were pumped by amplified 800 nm femtosecond optical pulses. Emitted THz radiation was focused, and the time-resolved spatial profile of the THz radiation on the focal plane was observed using a newly developed real-time imaging apparatus, which can correct the terahertz field images for nonuniformity in birefringence of the EO crystal. By scanning the delay time, frequency-resolved images were also obtained, which exhibit frequency-dependent field profiles. Field profiles observed were coherent superpositions of terahertz waves emitted from the antenna units constituting the array. By inverting the bias voltage to the central unit of the emitter array, we observed super-resolution beam size of terahertz waves, which are smaller than the diffraction limit.

  5. Optical efficiency enhancement methods for terahertz receiving photoconductive switches

    NASA Astrophysics Data System (ADS)

    Heshmat, Barmak; Pahlevaninezhad, Hamid; Darcie, Thomas Edward

    2013-12-01

    We improve the efficiency of THz receiving photoconductive switches by improving the conversion of the optical pump to signal current. This is achieved by both optimizing the incident excitation beam polarization and spatial profile of excitation. Due to boundary conditions of the electric field at the electrode edge, a nanometer-sized polarization-dependent shadow is created in the substrate at the electrode edge where most picosecond lifetime photocarriers are collected. This edge effect is further harnessed by elongating the excitation beam next to the stripline electrode. The effects of excitation beam polarization and spatial profile were experimented with InGaAs/InAlAs quantum-well-based photoconductive switch. In both cases notable enhancement in the signal is observed-30% with polarization optimization and up to 100% with beam elongation. Both techniques preserve the pulse quality and are applicable with readily available optical elements.

  6. Hybrid Computational Simulation and Study of Terahertz Pulsed Photoconductive Antennas

    NASA Astrophysics Data System (ADS)

    Emadi, R.; Barani, N.; Safian, R.; Nezhad, A. Zeidaabadi

    2016-11-01

    A photoconductive antenna (PCA) has been numerically investigated in the terahertz (THz) frequency band based on a hybrid simulation method. This hybrid method utilizes an optoelectronic solver, Silvaco TCAD, and a full-wave electromagnetic solver, CST. The optoelectronic solver is used to find the accurate THz photocurrent by considering realistic material parameters. Performance of photoconductive antennas and temporal behavior of the excited photocurrent for various active region geometries such as bare-gap electrode, interdigitated electrodes, and tip-to-tip rectangular electrodes are investigated. Moreover, investigations have been done on the center of the laser illumination on the substrate, substrate carrier lifetime, and diffusion photocurrent associated with the carriers temperature, to achieve efficient and accurate photocurrent. Finally, using the full-wave electromagnetic solver and the calculated photocurrent obtained from the optoelectronic solver, electromagnetic radiation of the antenna and its associated detected THz signal are calculated and compared with a measurement reference for verification.

  7. Investigation of a Photoconductively Switched, Radial Transmission Line Accelerator

    DTIC Science & Technology

    1987-06-01

    that is due to insulator surface flashover in a vacuum. The radial line conductors can be oriented vertically and the structural supports and...possible voltage or electric field pulse to the acceleration gap. Presently, flashover of the vacuum side of the insulator separating the power system...supported by material surfaces . The photoconductively switched radial line accelerator power system is comparable to the -wake field- accelerator

  8. 6H Silicon Carbide Photoconductive Switches for High Power Applications

    DTIC Science & Technology

    2006-11-01

    6H SILICON CARBIDE PHOTOCONDUCTIVE SWITCHES FOR HIGH POWER APPLICATIONS W. C. Nunnally*, N. Islam, K. Kelkar & C. Fessler Photonics for Radars...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Photonics for Radars and Optical Systems...switches. Additional work by the UMC Photonics for Radar and Optical Systems (PROS) group has demonstrated that the relatively new material of

  9. Radiation-induced extrinsic photoconductivity in Li-doped Si.

    NASA Technical Reports Server (NTRS)

    Fenimore, E.; Mortka, T.; Corelli, J. C.

    1972-01-01

    Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.

  10. Method and system for photoconductive detector signal correction

    DOEpatents

    Carangelo, R.M.; Hamblen, D.G.; Brouillette, C.R.

    1992-08-04

    A corrective factor is applied so as to remove anomalous features from the signal generated by a photoconductive detector, and to thereby render the output signal highly linear with respect to the energy of incident, time-varying radiation. The corrective factor may be applied through the use of either digital electronic data processing means or analog circuitry, or through a combination of those effects. 5 figs.

  11. Method and system for photoconductive detector signal correction

    DOEpatents

    Carangelo, Robert M.; Hamblen, David G.; Brouillette, Carl R.

    1992-08-04

    A corrective factor is applied so as to remove anomalous features from the signal generated by a photoconductive detector, and to thereby render the output signal highly linear with respect to the energy of incident, time-varying radiation. The corrective factor may be applied through the use of either digital electronic data processing means or analog circuitry, or through a combination of those effects.

  12. Macroporous Semiconductors

    PubMed Central

    Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

    2010-01-01

    Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  13. Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide

    SciTech Connect

    Makarenko, Ph. V. Pribylov, N. N.; Rembeza, S. I.; Mel'nik, V. A.

    2008-05-15

    The intrinsic photoconductivity of copper-compensated indium phosphide has been studied. It is found that mechanical polishing of a sample surface gives rise to an additional photoconductivity peak in the region of the fundamental absorption edge. This peak disappears upon storage of the sample. The dependence of the shape of the photoconductivity spectrum on the storage time, electric-field strength, and position of the light spot with respect to the contacts was determined. The results are explained in terms of variation in the lifetime of nonequilibrium carriers across the sample thickness. An expression qualitatively describing the photoconductivity spectra is presented.

  14. Giant Hall Photoconductivity in Narrow-Gapped Dirac Materials.

    PubMed

    Song, Justin C W; Kats, Mikhail A

    2016-12-14

    Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here, we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a helicity-dependent photoresponse in the Hall regime, where photoconductivity is dominated by its Hall component. We find that the induced Hall conductivity per incident irradiance is enhanced by up to 6 orders of magnitude when moving from the visible regime (with corresponding band gaps) to the far infrared. These results suggest that narrow-gap GDMs are an ideal test-bed for the unique physics that arise in the presence of Berry curvature and open a new avenue for infrared and terahertz optoelectronics.

  15. Persistent photoconductivity in highly porous ZnO films

    NASA Astrophysics Data System (ADS)

    Reemts, Jens; Kittel, Achim

    2007-01-01

    ZnO and ZnO-dye hybrid films prepared by electrochemical deposition are highly porous if fabricated in the presence of structure directing agents and they can easily be sensitized by various molecules. If the material is sensitized with the appropriate molecules, it becomes interesting for various sensor applications, i.e., gas sensors and biosensors, or as an electrode material for solar energy conversion in dye sensitized solar cells. In the present work, the focus is on dye sensitized ZnO as a model system. The long term photoconductivity transients have been investigated in such kind of material. Upon excitation with different wavelengths, the conductivity increases already under sub-band-gap illumination due to widely distributed trap states within the band gap. The slow photoconductivity transients follow a stretched exponential law if the illumination is rapidly changing in a dry atmosphere. The underlying mechanism of persistent photoconductivity can be attributed to a lattice relaxation process of surface states, immediately after electrons have been photoexcited into distributed surface states located inside the band gap of the ZnO thin film.

  16. Negative Photoconductivity and Carrier Heating in CVD Graphene

    NASA Astrophysics Data System (ADS)

    Heyman, James; Alebachew, Banteaymolu; Banman, Andrew; Kaminski, Zofia; Foo Kune, Rhyan; Stein, Jacob; Massari, Aaron; Robinson, Jeremy

    2014-03-01

    Ultrafast photoexcitation of CVD graphene typically leads to a transient decrease in conductivity. Previous reports identify two possible mechanisms for this decrease: carrier heating leading to a decrease in mobility, and a photo-induced population inversion producing a negative dynamic resistance. We present time-resolved THz transmission (TRTS) measurements which show that population inversion is not required to observe negative photoconductivity in CVD graphene and confirm the role of carrier heating. In p-type CVD graphene samples interband optical transitions are blocked for pump photon energies less than twice the Fermi energy. However, our pump photon-energy resolved TRTS measurements exhibit negative photoconductivity at all pump wavelengths investigated, indicating that interband excitation leading to population inversion is not required to observe this effect. In addition, we have performed TRTS measurements on CVD graphene in magnetic fields that separately probe carrier mobility and population. We find that negative photoconductivity following photoexcitation primarily arises from a decrease in carrier mobility, confirming the role of carrier heating. Research at NRL was supported by the Office of Naval Research. This research was supported by the National Science Foundation under the RUI grant DMR-1006065.

  17. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect

    Aleshkin, V. Ya.; Afonenko, A. A.; Dikareva, N. V.; Dubinov, A. A. Kudryavtsev, K. E.; Morozov, S. V.; Nekorkin, S. M.

    2013-11-15

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  18. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  19. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1973-01-01

    This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

  20. The photoconductivity relaxation properties of ZnO films by using photo-Hall effect measurements

    NASA Astrophysics Data System (ADS)

    Studenikin, S. A.; Golego, Nickolay; Cocivera, Michael

    1998-10-01

    Results are reported for experimental investigation of long term photoconductivity relaxation occurring over period of days in wide band gap semiconductor ZnO. Thin zinc oxide films were prepared by spray pyrolysis of zinc nitrate aqueous solution. (S.A.Studenikin, N.Golego, M.Cocivera, J.Appl.Phys., 1998, 83), 2104. Photo-Hall effect measurements were performed on an automatic setup specially designed for this purpose at the University of Guelph. Photo-Hall effect allowed us to measure both electron concentration and mobility during the relaxation process. Annealing in hydrogen and oxygen ambient at different temperature allowed us to control reversibly the concentration of conduction electrons in the same sample over several orders in magnitude. Data are analyzed by using an improved Laplace transform method. Physical mechanisms of the observed phenomena are discussed.

  1. Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties

    NASA Astrophysics Data System (ADS)

    Wu, X. C.; Tao, Y. R.; Li, L.; Bando, Y.; Golberg, D.

    2013-05-01

    Centimeter-long Ta3N5 nanobelts were synthesized by a reaction of centimeter-long TaS3 nanobelt templates with flowing NH3 at 800 °C for 2 h. The nanobelts have cross-sections of about 50 × 100 nm2, and lengths up to 0.5 cm. A field effect transistor (FET) made of a single Ta3N5 nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88 Ω m, and can be fitted well with an empirical formula ρ = 10831 exp(-T/43.8) - 22.6, where ρ is resistivity (Ω m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630 nm. The photocurrent increased by nearly 10 times the dark current under 450 nm light irradiation at an applied voltage of 5.0 V.

  2. Negative photoconductivity and memory effects of germanium nanocrystals embedded in HfO2 dielectric.

    PubMed

    Wang, Shiye; Liu, Weili; Zhang, Miao; Song, Zhitang; Lin, Chenglu; Dai, J Y; Lee, P F; Chan, H L W; Choy, C L

    2006-01-01

    A metal-insulator-semiconductor (MIS) structure containing an HfO2/SiO2 stack tunnel layer, isolated Germanium (Ge) nanocrystals, and an HfO2 capping layer, was obtained by an electron-beam evaporation method. A high-resolution transmission electron microscopy (HRTEM) study revealed that uniform and pronounced Ge nanocrystals had formed after annealing. Raman spectroscopy provided evidence for the formation of Ge-Ge bonds and the optimal annealing temperature for the crystallization ratio of the Ge. The electric properties of the MIS structure were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Negative photoconductivity was observed when the structure was under a forward bias, which screened the bias voltage, resulting in a decrease in the current at a given voltage and a negative shift in flat band voltage. A relatively high stored charge density of 3.27 x 10(12) cm 2 was also achieved.

  3. Advanced 3-V semiconductor technology assessment

    NASA Technical Reports Server (NTRS)

    Nowogrodzki, M.

    1983-01-01

    Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

  4. Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

    NASA Astrophysics Data System (ADS)

    Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

    2006-09-01

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

  5. Defects at semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Henzler, Martin

    1985-04-01

    Low Energy Electron Diffraction (LEED) is widely used for detection of periodicity at the surface and of atom arrangement within the unit cell. Experiments and results, however, are increasing, which use the spot profile analysis (SPA-LEED) for the study of nonperiodic surfaces. Here the kinematical approximation provides a wider range of validity than expected. For semiconductors defects are especially important, since the surface states in the gap are determined or strongly influenced by almost any kind of defects at the surface. Atomic steps at the interface {Si}/{SiO2} have been shown to be correlated with many electronic properties of MOS devices like mobility, interface states and fixed charge. The epitaxy on Si and GaAs has been studied with LEED and RHEED, showing the density of the nuclei during formation of a layer and the layer-by-layer growth. The formation of metal suicides in the monolayer range is accompanied by many different superstructures and other rearrangements. It is demonstrated, that the new high resolution instruments provide additional qualitative and quantitative informations on any kind of surface defects.

  6. GaAs MMIC phase shifters

    NASA Astrophysics Data System (ADS)

    Lane, A. A.; Myers, F. A.

    This paper describes the design and performance of various GaAs MMIC phase shifters specifically designed for electronically scanned antennas. Phase shifting is achieved by using GaAs FETs to switch various circuits to realize the required functions. Some preliminary results on novel components and high packing density techniques leading to truly effective multifunction circuits are described.

  7. Diffusion in isotopically controlled semiconductor systems

    NASA Astrophysics Data System (ADS)

    Bracht, H.

    1999-12-01

    Isotopically controlled heterostructures of 28Si/natSi and Al71GaAs/Al69GaAs/71GaAs have been used to study the self-diffusion process in this elemental and compound semiconductor material. The directly measured Si self-diffusion coefficient is compared with the self-interstitial and vacancy contribution to self-diffusion which were deduced from metal diffusion experiments. The remarkable agreement between the Si self-diffusion coefficients and the individual contributions to self-diffusion shows that both self-interstitials and vacancies mediate Si self-diffusion. The Ga self-diffusion in undoped AlGaAs was found to decrease with increasing Al concentration. The activation enthalpy of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs all lie in the range of (3.6±0.1) eV, but with different pre-exponential factors. The doping dependence of Ga self-diffusion reveals a retardation (enhancement) of Ga diffusion under p-type (n-type) doping compared to intrinsic conditions. All experimental results on the group-III atom diffusion are accurately described if vacancies on the group-III sublattice are assumed to mediate the Ga self- and Al-Ga interdiffusion in undoped AlGaAs and the Ga self-diffusion in Be- and Si-doped GaAs with an active dopant concentration of 3×1018 cm-3. The doping dependence of Ga self-diffusion in GaAs provides strong evidence that neutral, singly and doubly charged Ga vacancies govern the self-diffusion process.

  8. Passivation of defect states in Si-based and GaAs structures

    NASA Astrophysics Data System (ADS)

    Pinčík, E.; Kobayashi, H.; Brunner, R.; Takahashi, M.; Liu, Yueh-Ling; Ortega, L.; Imamura, K.; Jergel, M.; Rusnák, J.

    2008-10-01

    Formation of defect states on semiconductor surfaces, at its interfaces with thin films and in semiconductor volumes is usually predetermined by such parameters as semiconductor growth process, surface treatment procedures, passivation, thin film growth kinetics, etc. This paper presents relation between processes leading to formation of defect states and their passivation in Si and GaAs related semiconductors and structures. Special focus is on oxidation kinetics of yttrium stabilized zirconium/SiO 2/Si and Sm/GaAs structures. Plasma anodic oxidation of yttrium stabilized zirconium based structures reduced size of polycrystalline silicon blocks localised at thin film/Si interface. Samarium deposited before oxidation on GaAs surface led to elimination of EL2 and/or ELO defects in MOS structures. Consequently, results of successful passivation of deep traps of interface region by CN - atomic group using HCN solutions on oxynitride/Si and double oxide layer/Si structures are presented and discussed. By our knowledge, we are presenting for the first time the utilization of X-ray reflectivity method for determination of both density of SiO 2 based multilayer structure and corresponding roughnesses (interfaces and surfaces), respectively.

  9. DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

    NASA Astrophysics Data System (ADS)

    Kósa, Arád; Stuchlíková, L'ubica; Dawidowski, Wojciech; Jakuš, Juraj; Sciana, Beata; Radziewicz, Damian; Pucicki, Damian; Harmatha, Ladislav; Kováč, Jaroslav; Tłaczala, Marek

    2014-09-01

    In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels

  10. Radiative properties of multicarrier bound excitons in GaAs

    NASA Astrophysics Data System (ADS)

    Karin, Todd; Barbour, Russell J.; Santori, Charles; Yamamoto, Yoshihisa; Hirayama, Yoshiro; Fu, Kai-Mei C.

    2015-04-01

    Excitons in semiconductors can have multiple lifetimes due to spin-dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of k =0 excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be To×(1 ,3 ,3/4 ) , where To=(0.61 ±0.12 ) ns . Furthermore, we provide an estimate of the intralevel and interlevel exciton spin-relaxation rates.

  11. Nucleation mechanisms for compound semiconductors grown on Si by MOCVD

    NASA Technical Reports Server (NTRS)

    Soga, Tetsuo; George, Thomas; Jimbo, Takashi; Umeno, Masayoshi

    1991-01-01

    The influence of growth parameters on the initial stage of heteroepitaxial growth of GaP, GaAs and AlAs on (100) Si substrates was examined. GaP and GaAs grow on Si in three-dimensional growth mode, forming well separated islands. However, such islands were observed to be contiguous in the case of AlAs growth on Si. The island density was seen to be proportional to the growth rate. GaAs and GaP exhibit very different growth behavior with increasing V/III flux ratio. Misorientation of the Si substrate does not appear to affect the island densities. Possible mechanisms for this growth behavior, based on cluster formation and migration, are discussed for the growth of these compound semiconductors on Si.

  12. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  13. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  14. Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies

    NASA Astrophysics Data System (ADS)

    Vincenti, M. A.; D'Orazio, A.; Cappeddu, M. G.; Akozbek, Neset; Bloemer, M. J.; Scalora, M.

    2009-05-01

    We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.

  15. GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.

    1982-01-01

    The major thrusts proposed for GaAs were increased efficiency and improved radiation damage data. Current laboratory production cells consistently achieve 16 percent AMO one-Sun efficiency. The user community wants 18-percent efficient cells as soon as possible, and such a goal is though to be achievable in 2 years with sufficient research funds. A 20-percent research cell is considered the efficiency limit with current technology, and such a cell seems realizable in approximately 4 years. Future efficiency improvements await improved substrates and materials. For still higher efficiencies, concentrator cells and multijunction cells are proposed as near-term directions.

  16. Observation of long-range exciton diffusion in highly ordered organic semiconductors

    NASA Astrophysics Data System (ADS)

    Najafov, H.; Lee, B.; Zhou, Q.; Feldman, L. C.; Podzorov, V.

    2010-11-01

    Excitons in polycrystalline and disordered films of organic semiconductors have been shown to diffuse over distances of 10-50nm. Here, using polarization- and wavelength-dependent photoconductivity in the highly ordered organic semiconductor rubrene, we show that the diffusion of triplet excitons in this material occurs over macroscopic distances (2-8μm), comparable to the light absorption length. Dissociation of these excitons at the surface of the crystal is found to be the main source of photoconductivity in rubrene. In addition, we observe strong photoluminescence quenching and a simultaneous enhancement of photoconductivity when the crystal surface is functionalized with exciton splitters. In combination with time-resolved measurements, these observations strongly suggest that long-lived triplet excitons are indeed generated in molecular crystals by fission of singlets, and these triplets provide a significant contribution to the surface photocurrent generated in organic materials. Our findings indicate that the exciton diffusion bottleneck is not an intrinsic limitation of organic semiconductors.

  17. Holographic recording medium employing a photoconductive layer and a low molecular weight microcrystalline polymeric layer

    NASA Technical Reports Server (NTRS)

    Gange, Robert Allen (Inventor)

    1977-01-01

    A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

  18. A method of studying the photoelectric properties of liquid semiconductors

    SciTech Connect

    Aivazov, A.A.; Budagyan, B.G.; Giorgadze, A.L.

    1985-09-01

    The authors propose a way of measuring the optical and photoelectric properties of liquid semiconductors. They have developed a high temperature apparatus with cuvettes that allow sufficient material to be loaded for heat treating the melt over the whole range of measurement temperatures. After fusion and heat treatment for 30 min, the melt is fed into the working chamber by the pressure exerted by the inert gas. The optical and photoeletric parameters are measured from the melt. This method has been used to measure the steady-state longitudinal photoconductivity of liquid selenium.

  19. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  20. Hopping theory of band-tail relaxation in disordered semiconductors

    NASA Astrophysics Data System (ADS)

    Grünewald, M.; Movaghar, B.; Pohlmann, B.; Würtz, D.

    1985-12-01

    Within a new theoretical approach the current and energy decay in amorphous semiconductors is studied. The relaxation of photoexcited carriers observed by transient photoconductivity experiments in amorphous silicon and chalcogenides can well be described by an algebraic power-law decay. The theoretical explanation is based on nonequilibrium hopping transport between localized states in a band tail. The theory reproduces the typical temperature dependence of the decay param- eter commonly explained within a multiple-trapping (MT) model. The observed deviations from the simple MT relation at low temperatures can be explained by the theory. Additionally, direct calculation of the energy relaxation reveals further insight into the dissipation process.

  1. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  2. Photoelectrolytic production of hydrogen using semiconductor electrodes

    NASA Technical Reports Server (NTRS)

    Byvik, C. E.; Walker, G. H.

    1976-01-01

    Experimental data for the photoelectrolytic production of hydrogen using GaAs photoanodes was presented. Four types of GaAs anodes were investigated: polished GaAs, GaAs coated with gold, GaAs coated with silver, and GaAs coated with tin. The maximum measured efficiency using a tungsten light source was 8.9 percent for polished GaAs electrodes and 6.3 percent for tin coated GaAs electrodes.

  3. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, Chiu-Yen; Hong, Yu-Chen; Ko, Zong-Jie; Su, Ya-Wen; Huang, Jin-Hua

    2017-04-01

    In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate temperature, growth time, and As/Ga flux ratio during MBE growth, as well as the thickness, annealing time, and annealing temperature of Au film using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), cathodoluminescence (CL), and Raman spectroscopy. When the As/Ga flux ratio is fixed at 25 and the growth temperature at 540 °C, the GaAs nanowires exhibit a defect-free zinc blende structure with uniform and straight morphology. According to the characteristics of GaAs nanowires grown under varied conditions, a growth mechanism for defect-free zinc blende GaAs nanowires via Au-assisted vapor-liquid-solid (VLS) method is proposed. Finally, doping by Si and Be of nanowires is investigated. The results of doping lead to GaAs nanowires processing n-type and p-type semiconductor properties and reduced electrical resistivity. This study of defect-free zinc blende GaAs nanowire growth should be of assistance in further growth and applications studies of complex III-V group nanostructures.

  4. Optoelectronics in two-dimensional semiconductor alloys (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Léonard, François

    2015-08-01

    Two -dimensional transition-metal dichalcogenides (2D-TMDs) have attracted attention for applications in electronics and photonics, as well as for the wealth of new scientific phenomena that arise at low dimensionality. Recently, the ability to grow 2D-TMDs by chemical vapor deposition has opened the path to large area devices, but also to the synthesis of semiconductor alloys with tunable bandgaps. In this presentation, I will discuss our recent experimental work in exploring the optoelectronic properties of 2D MoS_2(1-x)Se_2x alloys spanning the compositional range. In particular, we report the observation of a new regime of operation where the photocurrent depends superlinearly on light intensity. We use spatially-resolved photocurrent measurements on devices consisting of CVD-grown monolayers to show the photoconductive nature of the photoresponse, with the photocurrent dominated by recombination and field-induced carrier separation in the channel. Time-dependent photoconductivity measurements show the presence of persistent photoconductivity for the S-rich alloys, while photocurrent measurements at fixed wavelength for devices of different alloy compositions show a systematic decrease of the responsivity with increasing Se content associated with increased linearity of the current-voltage characteristics. A model based on the presence of different types of recombination centers is presented to explain the origin of the superlinear dependence on light intensity, which emerges when the non-equilibrium occupancy of initially empty fast recombination centers becomes comparable to that of slow recombination centers.

  5. Buckling-Based Method for Measuring the Strain-Photonic Coupling Effect of GaAs Nanoribbons.

    PubMed

    Wang, Yuxuan; Chen, Ying; Li, Haicheng; Li, Xiaomin; Chen, Hang; Su, Honghong; Lin, Yuan; Xu, Yun; Song, Guofeng; Feng, Xue

    2016-09-27

    The ability to continuously and reversibly tune the band gap and the strain-photonic coupling effect in optoelectronic materials is highly desirable for fundamentally understanding the mechanism of strain engineering and its applications in semiconductors. However, optoelectronic materials (i.e., GaAs) with their natural brittleness cannot be subject to direct mechanical loading processes, such as tension or compression. Here, we report a strategy to induce continuous strain distribution in GaAs nanoribbons by applying structural buckling. Wavy GaAs nanoribbons are fabricated by transfer printing onto a prestrained soft substrate, and then the corresponding photoluminescence is measured to investigate the strain-photonic coupling effect. Theoretical analysis shows the evolution of the band gap due to strain and it is consistent with the experiments. The results demonstrate the potential application of a buckling configuration to delicately measure and tune the band gap and optoelectronic performance.

  6. Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Prieto, Ivan; Kozak, Roksolana; Skibitzki, Oliver; Rossell, Marta D.; Zaumseil, Peter; Capellini, Giovanni; Gini, Emilio; Kunze, Karsten; Arroyo Rojas Dasilva, Yadira; Erni, Rolf; Schroeder, Thomas; von Känel, Hans

    2017-03-01

    Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

  7. High-speed digital ICs - A comparison between silicon and GaAs

    NASA Astrophysics Data System (ADS)

    Ricco, Bruno

    1986-06-01

    High electron mobility and semi-insulating characteristics make GaAs a semiconductor material ideally suited for very fast logics. Nevertheless, for such purposes it must compete with the fully mature LSI and VLSI technologies of silicon. The choice depends on applications and technology options. If MESFETs are rated against Si MOSFETs and bipolar transistors, the scale of circuit integration plays a fundamental role. For fewer than a few hundred gates per chip, GaAs can provide circuits that are two to four times faster although the cost per bit is significantly higher; thus GaAs circuits seem attractive only for required performances above a few gigahertz (beyond the reach of silicon devices). The brighter perspectives for GaAs come from the potential of heterostructure devices which are under development and showing great promise. Sophisticated processing steps (such as molecular beam epitaxy) are still under development and still need to be assessed regarding their viability for circuit mass production. Various logics are compared.

  8. Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy.

    PubMed

    Prieto, Ivan; Kozak, Roksolana; Skibitzki, Oliver; Rossell, Marta D; Zaumseil, Peter; Capellini, Giovanni; Gini, Emilio; Kunze, Karsten; Rojas Dasilva, Yadira Arroyo; Erni, Rolf; Schroeder, Thomas; Känel, Hans von

    2017-03-01

    Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

  9. Semiconducting-to-Metallic Photoconductivity Crossover and Temperature-Dependent Drude Weight in Graphene

    NASA Astrophysics Data System (ADS)

    Frenzel, A. J.; Lui, C. H.; Shin, Y. C.; Kong, J.; Gedik, N.

    2014-08-01

    We investigate the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrate that graphene exhibits semiconducting positive photoconductivity near zero carrier density, which crosses over to metallic negative photoconductivity at high carrier density. These observations can be accounted for by the interplay between photoinduced changes of both the Drude weight and carrier scattering rate. Our findings provide a complete picture to explain the opposite photoconductivity behavior reported in (undoped) graphene grown epitaxially and (doped) graphene grown by chemical vapor deposition. Notably, we observe nonmonotonic fluence dependence of the photoconductivity at low carrier density. This behavior reveals the nonmonotonic temperature dependence of the Drude weight in graphene, a unique property of two-dimensional massless Dirac fermions.

  10. Semiconducting-to-metallic photoconductivity crossover and temperature-dependent Drude weight in graphene.

    PubMed

    Frenzel, A J; Lui, C H; Shin, Y C; Kong, J; Gedik, N

    2014-08-01

    We investigate the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrate that graphene exhibits semiconducting positive photoconductivity near zero carrier density, which crosses over to metallic negative photoconductivity at high carrier density. These observations can be accounted for by the interplay between photoinduced changes of both the Drude weight and carrier scattering rate. Our findings provide a complete picture to explain the opposite photoconductivity behavior reported in (undoped) graphene grown epitaxially and (doped) graphene grown by chemical vapor deposition. Notably, we observe nonmonotonic fluence dependence of the photoconductivity at low carrier density. This behavior reveals the nonmonotonic temperature dependence of the Drude weight in graphene, a unique property of two-dimensional massless Dirac fermions.

  11. Temperature and spectral dependence of CH3NH3PbI3 films photoconductivity

    NASA Astrophysics Data System (ADS)

    Khenkin, M. V.; Amasev, D. V.; Kozyukhin, S. A.; Sadovnikov, A. V.; Katz, E. A.; Kazanskii, A. G.

    2017-05-01

    Halide perovskites are widely studied due to their potential applications in solar cells. Despite the remarkable success in increasing perovskite solar cell efficiency, the underlying photophysical processes remain unclear. To cover this gap, we studied temperature, spectral, and light intensity dependence of photoconductivity of CH3NH3PbI3 films in the planar contact configuration. We observed non-monotonic behavior of the photoconductivity temperature dependence: a power-law decrease with increasing temperature at the temperatures below 185 K and close to exponential growth above this temperature. Spectral and light intensity dependences of photoconductivity allowed us to postulate that phase transition between tetragonal and orthorhombic structures and a change in the recombination channel are unlikely to be the reasons for abrupt change in photoconductivity behavior. Charge carrier mobility is proposed to be responsible for unusual photoconductivity changes with temperature.

  12. Subpicosecond Carrier Dynamics in Semiconductor Lasers and Lasers Based on Intersubband Transition.

    NASA Astrophysics Data System (ADS)

    Sung, Chun-Yung

    intersubband relaxation in stepped quantum well structures for far-infrared lasers were also measured. We have obtained quite good agreement between theoretical and experimental values for the intersubband relaxation rates in undoped structures. It is shown that the modified intersubband relaxation rates in the stepped quantum well allow us to establish a population inversion between subbands in both the proposed optically pumped and electrically pumped FIR semiconductor laser structures. When the n=3 state is pumped, a population inversion between n3 and n2 (separated by 7 THz) is observed, which will be appropriate for an optically-pumped FIR laser. Low-temperature-grown GaAs (LT-GaAs) is very important for many high speed optoelectronic application. Previous experiments have indicated the role of both EL2-like arsenic anti-site defect centers or arsenic precipitates in producing an ultrafast lifetime. We have performed a multi-wavelength pump-probe experiment to probe the separate electron and hole capture times. Using high carrier density excitation to saturate the midgap traps, we have determined the carrier life time in the defect band. A better understanding of the dynamics of electrons and holes in LT-GaAs will lead to optimization of electronic and photoconductive devices based on these materials.

  13. Surface sum frequency generation spectroscopy on non-centrosymmetric crystal GaAs (001)

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Kim, Jisun; Khoury, Rami; Saghayezhian, Mohammad; Haber, Louis H.; Plummer, E. W.

    2017-10-01

    Femtosecond broadband sum frequency generation (SFG) spectroscopy is applied to surface studies of the archetypical non-centrosymmetric semiconductor GaAs (001). Azimuthal angular dependence studies in reflection geometry under eight possible polarization configurations reveal strong surface-bulk interference owing to heterodyne amplification. The crystal symmetry and the surface quadrupole contributions need to be considered to properly interpret the resulting nonlinear spectroscopic signals. In addition, over bandgap excitation by one of the incident beams brings the semiconductor surface to a transient excited state, enabling enhanced sensitivity of broadband SFG to probe the surface electronic properties of non-centrosymmetric semiconductors. These findings suggest that this technique can be generally applied to surface studies of other non-centrosymmetric crystals.

  14. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  15. Optically pumped nuclear magnetic resonance of semiconductors.

    PubMed

    Hayes, Sophia E; Mui, Stacy; Ramaswamy, Kannan

    2008-02-07

    Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed.

  16. Hot Carriers in Semiconductors 6, Scottsdale, Arizona

    DTIC Science & Technology

    1989-11-01

    Hamburg MP-2 "Tunable cyclotron-resonance laser based on hot holes in germanium applied to FIR-spectroscopy of GaAs heterostructures," K. Unterrainer...34Frequency range and distributions of inverted hot hole generated FIR in germanium ," V. I. Gavrilenko, N. G. Kalugin, Z F. Krasirnik, and V. V. Nikonorov, Q...semiconductor superlattices," P. England, J. R. Hayes, E. Colas, and M. Helm, Red Bank 2:50 p.m. MC-2 "High-field transport and NDR with hot phonons in

  17. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect

    Khurgin, Jacob B.

    2014-06-02

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  18. MEED studies of thin metal film covered semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Shimaoka, G.

    1991-06-01

    Results of observations of thin metal films deposited on clean surfaces of semiconductors, such as Si, GaAs and GaP, in the early stage of deposition in UHV, are reported with particular emphasis on in-situ MEED observations at 1-5 kV using a grazing angle of incidence. Various atomic rearrangements and reconstructions due to thin metal deposits were observed, for example: 2 × 1 and 4 × 5 reconstruction of Ni on a clean Si(110)16 × 2 surface, and formation of a one-dimensional lattice of Ag on a coplanar plane of GaAs (001) and GaP (001) and (011). These results are also discussed in terms of surface structures with special emphasis on the early stages of metal deposition and on the metal/semiconductor interface.

  19. Long wavelength photoconductive detectors for airborne and orbital infrared astronomy

    NASA Technical Reports Server (NTRS)

    Houck, J. R.

    1983-01-01

    Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the system under low photon background conditions indicated that sensitivity was limited by the Johnson noise of the load resistor. The detectors were mounted in the Ames cooled grating spectrometer, and flown on the Kuiper Airborne Observatory. Good quality astronomical data were obtained during the flight of 7 July 1983.

  20. The research on the optimum working conditions of photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Dai, Yang; Zhang, Like; Yang, Lei; Yan, Zhijin; Chen, Suguo; Hou, Lei

    2015-11-01

    The photoconductive antenna (PCA) is one of the most common devices to generate terahertz (THz) wave, whose radiation efficiency is largely determined by the working conditions. In order to improve the power of THz wave, the influence of pump laser and bias voltage on the intensity of the THz wave radiated by PCA was studied through experiment and the optimum working conditions of PCA was obtained through the theoretical analysis, these are the maximum safe voltage and saturated laser energy. Only under the optimum conditions can the signal-to-noise ratio(SNR)of THz wave radiated by PCA be the highest and the PCA would not breakdown.

  1. Soft x-ray detection with diamond photoconductive detectors

    SciTech Connect

    Kania, D.R.; Pan, L.; Kornblum, H.; Bell, P.; Landen, O.N.; Pianetta, P.

    1990-05-04

    Photoconductive detectors fabricated from natural lla diamonds have been used to measure the x-ray power emitted from laser produced plasmas. The detector was operated without any absorbing filters to distort the x-ray power measurement. The 5.5 eV bandgap of the detector material practically eliminates its sensitivity to scattered laser radiation thus permitting filterless operation. The detector response time or carrier life time was 90 ps. Excellent agreement was achieved between a diamond PCD and a multichannel photoemissive diode array in the measurement of radiated x-ray power and energy. 4 figs.

  2. Optical modulation of persistent photoconductivity in ZnO nanowires

    SciTech Connect

    Wang Yao; Liao Zhaoliang; Chen Dongmin; She Guangwei; Mu Lixuan; Shi Wensheng

    2011-05-16

    In this study, ZnO nanowires (ZNWs)-based optoelectric devices are found to exhibit strong persistent photoconductivity (PPC) effect. An optical modulation on the PPC effect of the ZNWs with 980 nm infrared (IR) laser has been investigated. It was found that the decay time for the PPC can be significantly shortened by IR irradiation. The modulation mechanism related with the oxygen vacancies and the subband gap excitation is proposed. Based on this mechanism, the modulation behavior of the IR can be well explained. The present optical modulation on the PPC is suggested to have potential applications in enhancing the performance of ZnO-based photodetectors.

  3. Gigahertz planar photoconducting antenna activated by picosecond optical pulses.

    PubMed

    Liu, D W; Thaxter, J B; Bliss, D F

    1995-07-15

    We have generated 1-20-GHz microwave pulses by illuminating an Fe-compensated InP wafer with 50-ps optical pulses at normal incidence. The process of the generation of microwave radiation was monitored and analyzed directly through a 40-GHz sampling oscilloscope with precision. The saturation properties, the waveform evolution, and the optical coupling efficiency of the gigahertz photoconducting antenna are discussed. The flexibility, compactness, and high-resolution features offered by this technique merit new applications for radar communication as well as for other microwave detecting devices.

  4. Photoconductivity of ZnO based granular structures

    NASA Astrophysics Data System (ADS)

    Poghosyan, Armen R.; Aghamalyan, Natella R.; Elbakyan, Elbak Y.; Guo, Ruyan; Hovsepyan, Ruben K.; Petrosyan, Silva I.

    2014-09-01

    We studied experimentally the granular structures prepared on the base of ZnO thin films. The influence of acceptor or donor complex, caused by oxygen vacancy and interstitial zinc atom, and impurities (Li or Ga) on the crystallite structure conductivity has been investigated. The effect of granule size and crystallite structure on conductivity and photoconductivity was studied. The new method for determination of electric current dependence on spatial coordinates in thin conducting film was developed, which allowed to diagnose a one-dimensional conductivity in ZnO:Ga films. The experimental results are interpreted on the basis of the scaling hypothesis and the percolation theory.

  5. Gigahertz planar photoconducting antenna activated by picosecond optical pulses

    NASA Astrophysics Data System (ADS)

    Liu, D. W.; Thaxter, J. B.; Bliss, D. F.

    1995-07-01

    We have generated 1-20-GHz microwave pulses by illuminating an Fe-compensated InP wafer with 50-ps optical pulses at normal incidence. The process of the generation of microwave radiation was monitored and analyzed directly through a 40-GHz sampling oscilloscope with precision. The saturation properties, the waveform evolution, and the optical coupling efficiency of the gigahertz photoconducting antenna are discussed. The flexibility, compactness, and high-resolution features offered by this technique merit new applications for radar communication as well as for other microwave detecting devices.

  6. The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systems

    SciTech Connect

    Gradinaru, G.; Madangarli, V.P.; Sudarshan, T.S. . Dept. of Electrical and Computer Engineering)

    1994-07-01

    New experimental results on surface flashover are reported for high field silicon-dielectric systems. Different conditions of the lateral surface, contacts and ambient dielectrics have been studied. The strong influence of the semiconductor quality, and that of the dielectric properties, on the prebreakdown and breakdown response of the system, is demonstrated. All experimental results strongly support the conclusion that surface flashover in silicon systems is a physical process totally different from semiconductor surface breakdown. This conclusion has important practical application in the improvement of the performance of photoconductive power switches, severely limited by premature breakdown effects.

  7. GaAs - A Versatile Photoconductive Material for the Measurement of X-Rays in Pulsed Power Applications

    DTIC Science & Technology

    2005-06-01

    Ajay Vermam aNu-Trek, Inc., 16428 Avenida Florencia , Poway, CA 92064 bFisk University, Center for Photonic Materials and Devices, Nashville, TN...WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Nu-Trek, Inc., 16428 Avenida Florencia , Poway, CA 92064 8. PERFORMING...International Pulsed Power Conference (19th). Held in San Francisco , CA on 16-21 June 2013., The original document contains color images. 14. ABSTRACT We

  8. Ion implantation in compound semiconductors for high-performance electronic devices

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-05-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

  9. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  10. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  11. Photoeffects of semiconductor electrolyte interfaces

    NASA Astrophysics Data System (ADS)

    Phillips, T. E.; Moorjani, K.; Murphy, J. C.; Poehler, T. O.

    1985-03-01

    Materials based on modified transition metal oxide semiconductors for the photoelectrochemical decomposition of H2O were investigated. Single crystals of TiO2 doped with VO2 were made and it was demonstrated that the bandgap was decreased from 3.03 eV to 1.99 eV. The flatband potential was increased from -1.0 V to 0.25 V. Both effects are attributed to the existence of an empty vanadium d-band located in the TiO2 bandgap. Another approach was taken with FeTiO3-Fe2O3 alloys in the form of amorphous thin films and single crystals, where it was anticipated that the charge-transfer interactions observed in such alloys could be exploited in the materials' photoelectrochemical properties. The effect of FeTiO3 had very little effect on the overall properties of FE2O3 single crystals. On the other hand the effect on the Fe/Ti oxide thin films was quite dramatic. Optical absorption, photoconductivity and photoelectrolytic spectral measurement demonstrate a photometric enhancement at energies above the bandgap for Ti concentrations in the range of 5% to 8%. There is some suggestion that the bandgap has been reduced in this concentration regime. Higher concentrations of Ti result in a change from n-type to p-type. Efficiency and stability of thermally oxidized Fe/Ti oxide films are comparable to single crystal results.

  12. Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

    DTIC Science & Technology

    2007-11-02

    inexpensive way to analyze and design the semiconductor devices before expensive device processing. Since traditional equivalent circuit models and...are described, along with representative simulation results for various devices, such as Si- MESFET , Si-MOSFET and GaAs- MESFET . ^CQTJM^1^^0^ 8... determined by how accurately carrier transport is described. Generally, the more sophisticated the approach, the heavier the computational burden

  13. Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress

    NASA Astrophysics Data System (ADS)

    Signorello, G.; Lörtscher, E.; Khomyakov, P. A.; Karg, S.; Dheeraj, D. L.; Gotsmann, B.; Weman, H.; Riel, H.

    2014-04-01

    Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration can be found in wurtzite (WZ) semiconductors: here electron and hole wave-functions overlap strongly but optical transitions between these states are impaired by symmetry. Switching between bandgap configurations would enable novel photonic applications but large anisotropic strain is normally needed to induce such band structure transitions. Here we show that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress. For the first time, we clarify the band structure of WZ GaAs, providing a conclusive picture of the energy and symmetry of the electronic states. We envisage a new generation of devices that can simultaneously serve as efficient light emitters and photodetectors by leveraging the strain degree of freedom.

  14. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    SciTech Connect

    Abere, Michael J.; Yalisove, Steven M.; Torralva, Ben

    2016-04-11

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350–400 nm tall and ∼90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  15. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

    NASA Astrophysics Data System (ADS)

    Bellotti, Enrico; Driscoll, Kristina; Moustakas, Theodore D.; Paiella, Roberto

    2008-03-01

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN /AlGaN or GaAs /AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  16. Optically pumped NMR: Revealing spin-dependent Landau level transitions in GaAs

    NASA Astrophysics Data System (ADS)

    Ramaswamy, K.; Mui, S.; Crooker, S. A.; Pan, X.; Sanders, G. D.; Stanton, C. J.; Hayes, S. E.

    2010-08-01

    We show that high-resolution optically pumped NMR (OPNMR) studies can reveal spin-dependent optical transitions between valence- and conduction-band Landau levels in bulk semiconductors such as GaAs. The OPNMR signal intensity exhibits oscillations as a function of pump photon energy that evolve with magnetic field. In contrast to standard polarized magnetoabsorption measurements, OPNMR is sensitive to the polarization of the photoexcited electron spins (i.e., the difference between spin-up and spin-down electron populations rather than the sum). This allows one to clearly resolve the spin dependence of optical transitions that might normally be obscured in conventional magnetoabsorption studies. The data are in good agreement with theoretical calculations of the transitions from the spin-split light-hole Landau levels in the valence band to the conduction-band Landau levels of GaAs.

  17. Temperature-dependent side-facets of GaAs nanopillars

    NASA Astrophysics Data System (ADS)

    Soo, Mun Teng; Zheng, Kun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati; Zou, Jin

    2016-09-01

    In this study, the effect of growth temperature on the structural properties of Au-catalysed epitaxial GaAs semiconductor nanopillars grown by metal-organic chemical vapour deposition is investigated by electron microscopy. It has been found that the growth temperature plays a significant role on the evolution of side-facets of zinc-blende structured GaAs nanopillars. At a growth temperature of 550 °C, six \\{112\\} side-facets are formed; whereas at a higher growth temperature of 600 °C, six \\{110\\} side-facets are observed. It is believed that the formation of \\{112\\} side-facets is a kinetically dominated process while the formation of \\{110\\} side-facets is a thermodynamical process. Besides, the diffusion-induced nanopillar foundations present the same \\{112\\} edge side-facets regardless of the growth temperature.

  18. Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration

    NASA Astrophysics Data System (ADS)

    Chen, C. L.; Mahoney, L. J.; Calawa, S. D.; Molvar, K. M.; Maki, P. A.; Mathews, R. H.; Sage, J. P.; Sollner, T. C. L. G.

    1999-06-01

    Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-quality GaAs. The high resistivity of the oxygen-implanted area was maintained after the regrowth and no oxygen incorporation was observed in the regrown layer. The cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas is 7 GHz. This demonstration shows that planar technology can be used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits.

  19. A portable X-ray apparatus with GaAs linear array

    NASA Astrophysics Data System (ADS)

    Ardashev, E. N.; Gorokhov, S. A.; Polkovnikov, M. K.; Lobanov, I. S.; Vorobiev, A. P.

    2011-08-01

    The widely growing interest to the digital diagnostics and analysis systems, that have many advantages in comparison with the traditional (film) systems, in data taking, data storing, and data transmitting, requires a new detection technology. One of the most promising system for medical radiography today is a scanning type apparatus with some linear array detectors. The constructed apparatus is a device with some semiconductor GaAs detectors as sensitive elements to form the image while scanning an object. GaAs detectors are the detectors of the direct transformation of X-ray radiation into the electrical. The present paper describes the results of the construction and testing of the portable X-ray unit for traumatic examination and orthopedic manipulation in stationer clinics and at the first aid in medicine of catastrophe.

  20. Synthesis and functionalization of a triaryldiamine-base photoconductive/photorefractive composite, and its application to aberrated image restoration

    NASA Astrophysics Data System (ADS)

    Liang, Yichen

    Organic phoorefractive (PR) composites have recently emerged as an important class of materials for applications including high-density data storage, optical communication, and biomedical imaging. In an effort to further improve their performance, this study focused on the utilization of functionalized semiconductor nanocrystals to photosensitize triaryamine (TPD)-based PR composites, as well as the application of TPD-based PR composites in the restoration of aberrated optical information. A novel approach to functionalize CdSe quantum dot (QCdSe) was firstly introduced where the sulfonated triarydiamine (STPD) was used as charge-transporting ligand to passivate QCdSe. TPD-based photoconductive and PR composites were photosensitized with the STPD-passivated QCdSe (SQCdSe). Due to the charge-transporting capability of STPD, the composites photosensitized with STPD-capped QCdSe exhibited superior performance relative to composites employing more traditional photosensitizers (such as fullerene C60 and trioctylphosphine-capped QCdSe), with figures-of-merit including photoconductivities in excess of 60 pS/cm, two-beam coupling gain coefficients in excess of 110 cm-1, and PR response time of less than 30 ms. In addition, the ability of TPD-based PR composites to correct aberrations associated with a laser beam was described. Here, a severely aberrated laser beam was able to be restored to a nearly unaberrated condition through the PR process, and the potential of this technique for practical applications was well explained. Based on the current experimental geometry, a PR response time of 0.5 s was observed, which is the fastest PR response time reported for a PR composite operating under experimental conditions designed for the correction of optical aberrations.

  1. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

    NASA Astrophysics Data System (ADS)

    Molière, T.; Jaffré, A.; Alvarez, J.; Mencaraglia, D.; Connolly, J. P.; Vincent, L.; Hallais, G.; Mangelinck, D.; Descoins, M.; Bouchier, D.; Renard, C.

    2017-01-01

    The monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 μ m) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping.

  2. Carbon molecular beam epitaxy on various semiconductor substrates

    SciTech Connect

    Jerng, S.K.; Yu, D.S.; Lee, J.H.; Kim, Y.S.; Kim, C.; Yoon, S.; Chun, S.H.

    2012-10-15

    Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs, GaN, InP), and group II–VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

  3. Photoelectron imaging of cells: photoconductivity extends the range of applicability.

    PubMed Central

    Habliston, D L; Hedberg, K K; Birrell, G B; Rempfer, G F; Griffith, O H

    1995-01-01

    Photoelectron imaging is a sensitive surface technique in which photons are used to excite electron emission. This novel method has been applied successfully in studies of relatively flat cultured cells, viruses, and protein-DNA complexes. However, rounded-up cell types such as tumor cells frequently are more difficult to image. By comparing photoelectron images of uncoated and metal-coated MCF-7 human breast carcinoma cells, it is shown that the problem is specimen charging rather than a fundamental limitation of the electron imaging process. This is confirmed by emission current measurements on uncoated monolayers of MCF-7 carcinoma cells and flatter, normal Wi-38 fibroblasts. We report here that sample charging in photoelectron microscopy can be eliminated in most specimens by simultaneous use of two light sources--the standard UV excitation source (e.g., 254 nm) and a longer wavelength light source (e.g., 325 nm). The reduction in sample charging results largely from enhanced photoconduction in the bulk sample and greatly extends the range of cells that can be examined by photoelectron imaging. The contributions of photoconductivity, the electric field of the imaging system, and the short escape depths of the photoelectrons combine to make photoelectron imaging a uniquely sensitive technique for the study of biological surfaces. Images FIGURE 1 FIGURE 2 FIGURE 3 FIGURE 4 FIGURE 5 FIGURE 6 PMID:8534832

  4. Influence of electrically induced refraction and absorption on the measurement of spin current by pockels effect in GaAs

    SciTech Connect

    Liu, Houquan; She, Weilong

    2015-03-14

    The pockels effect could be utilized to measure spin current in semiconductors for linear electro-optic coefficient can be induced by spin current. When dc electric field is applied, the carriers will shift in k space, which could lead to the change of refraction and absorption coefficients. In this paper, we investigate the influence of the induced change of the refraction and absorption coefficients on the measurement of spin current by pockels effect in GaAs.

  5. Electronic spin polarization and the spin-dependent bandstructure in GaAs probed by optically pumped NMR

    SciTech Connect

    Crooker, Scott A; Ramaswamy, Kannan; Mui, Stacy; Hayes, Sophia E; Pan, Xingyuan; Sanders, Gary D; Stanton, Christopher J

    2008-01-01

    High resolution optically pumped NMR (OPNMR) experiments are used to resolve fine features in the spin-dependent electronic structure of the valence bands in semi-insulating GaAs. By theoretically calculating oscillations in the OPNMR signal intensity with respect to the excitation energy, we have mapped out the conduction band electronic spin polarization under optical pumping. Comparison with a theoretical analysis of the oscillatory experimental features allows the extraction of semiconductor energy band parameters.

  6. Pulse transformer for GaAs laser

    NASA Technical Reports Server (NTRS)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  7. Heterogeneous Integration of Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Moutanabbir, Oussama; Gösele, Ulrich

    2010-08-01

    The ability to tailor compound semiconductors and to integrate them onto foreign substrates can lead to superior or novel functionalities with a potential impact on various areas in electronics, optoelectronics, spintronics, biosensing, and photovoltaics. This review provides a brief description of different approaches to achieve this heterogeneous integration, with an emphasis on the ion-cut process, also known commercially as the Smart-Cut™ process. This process combines semiconductor wafer bonding and undercutting using defect engineering by light ion implantation. Bulk-quality heterostructures frequently unattainable by direct epitaxial growth can be produced, provided that a list of technical criteria is fulfilled, thus offering an additional degree of freedom in the design and fabrication of heterogeneous and flexible devices. Ion cutting is a generic process that can be employed to split and transfer fine monocrystalline layers from various crystals. Materials and engineering issues as well as our current understanding of the underlying physics involved in its application to cleaving thin layers from freestanding GaN, InP, and GaAs wafers are presented.

  8. Compound semiconductor surfaces and interfaces

    NASA Astrophysics Data System (ADS)

    Wilmsen, C. W.

    All semiconductor devices and integrated circuits require dielectric layers for interconnect isolation, gate oxides, passivation, etc. Thermally grown SiO2 is the primary dielectric film for silicon technology. This ONR contract investigated the chemistry and electrical properties of the interface between III-V compound semiconductors and electrical properties of grown and deposited oxides. When this study began, very little was known about these oxides or their interfaces. The results of the research supported by this contract has added substantially to the fundamental understanding of the oxide growth, properties and electronic structure. Much of the experimental work was obtained with surface analytical techniques and significant contributions were also made in this field. The original ONR contract began in October 1975 and initially concentrated on the grown oxides of InP and GaAs. This work evolved over the years to include the study of deposited insulator/InP interfaces and trapping at the interface. The ONR contract has supported the publication of 31 journal articles and book chapters and numerous conference presentations.

  9. Laser Annealing of GaAs

    DTIC Science & Technology

    1978-12-01

    annealing implanted layers. Sheet resistance measurements made on the irradiated semi- insulating GaAs samples indicate no significant change in the... sheet resistance after laser irradiation (typical decrease in the sheet resistance after laser irradiation was found to be less than a factor of two...OF THE SHEET - RESISTANCE (P ) THE EFFECTIVE SHEET ELECTRON CONCENTRATION (N ), AND THE EFFECTIVE MOBILITY _u)FOR SEMIb- INSULATING GaAs IMPLANTED WITH

  10. GaAs homojunction solar cell development

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

    1980-01-01

    The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

  11. DESIGN NOTE: A measurement set-up for photoconductivity decay experiments

    NASA Astrophysics Data System (ADS)

    Pisarkiewicz, T.; Kuta, S.

    1998-06-01

    Measurements of photoconductivity decay from the steady state for samples of amorphous silicon and silicon-carbon alloys were carried out using the experimental set-up with a Pockels cell as a light chopper. The developed electronic switching circuit allows measurements of decay times ranging down to microseconds. The advantage of the adopted method of light switching is that one can easily control the light intensity and photon energy. From knowledge of the photoconductivity decay time and the value of the steady state photoconductivity for a given sample, the carrier drift mobility can be calculated.

  12. Optical switching of terahertz radiation from meta-atom-loaded photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Takano, Keisuke; Chiyoda, Yui; Nishida, Tsubasa; Miyamaru, Fumiaki; Kawabata, Taku; Sasaki, Hirofumi; Takeda, Mitsuo W.; Hangyo, Masanori

    2011-10-01

    Optical switching of the spectrum and polarization of terahertz radiation from split-ring resonator-loaded photoconductive antennas has been demonstrated. The switching is based on the sensitivity of the resonance of a split-ring resonator on a photoconductive substrate to a change in the capacitance induced by optical pulse irradiation. The spectral and polarization characteristics of the split-ring resonator-loaded photoconductive antennas are discussed in terms of the coupling between the electric dipole induced by the pump laser and the eigenmodes of the split-ring resonators.

  13. Photorefractive effect in ferroelectric liquid crystal blends containing terthiophene photoconductive chiral dopants

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeo; Yoshino, Masanori

    2016-04-01

    Ferroelectric liquid crystalline mixtures composed of a smectic liquid crystal, a photoconductive chiral dopant, and an electron trap reagent exhibit a large photorefractivity with a rapid response. It is expected that the photorefractive FLC blends can be utilized in dynamic amplification of moving optical signals. In the present study, the photorefractive properties of the ferroelectric liquid crystal blends containing different photoconductive chiral dopants were examined. The durability of the photoconductive chiral dopants during laser irradiation was investigated. Tthe effect of the conduction of photogenerated ionic species on the photorefractivity decay was clarified.

  14. Spin splitting in 2D monochalcogenide semiconductors

    NASA Astrophysics Data System (ADS)

    Do, Dat T.; Mahanti, Subhendra D.; Lai, Chih Wei

    2015-11-01

    We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer β-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D’yakonov-Perel’ spin relaxation mechanism is also suppressed.

  15. Spin splitting in 2D monochalcogenide semiconductors.

    PubMed

    Do, Dat T; Mahanti, Subhendra D; Lai, Chih Wei

    2015-11-24

    We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer β-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D'yakonov-Perel' spin relaxation mechanism is also suppressed.

  16. Additional compound semiconductor nanowires for photonics

    NASA Astrophysics Data System (ADS)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  17. Spin splitting in 2D monochalcogenide semiconductors

    PubMed Central

    Do, Dat T.; Mahanti, Subhendra D.; Lai, Chih Wei

    2015-01-01

    We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer β-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D’yakonov-Perel’ spin relaxation mechanism is also suppressed. PMID:26596907

  18. Mapping GaAs Photoluminescence

    NASA Astrophysics Data System (ADS)

    Kaminski, Raymond

    1987-01-01

    Photoluminescence spectroscopy is one of the most effective methods for characterizing semiconductor materials like silicon, gallium arsenide or indium phosphide. This analytical technique supplies data that tells the researcher how well devices fabricated from a. particular material can be expected to perform. The information can then be used to optimize growing conditions or to reject a sample before additional processing. Such increases in, and stabilization of device yield are critical in a very competitive marketing environment.

  19. Nonequilibrium Green's function theory of resonant steady state photoconduction in a double quantum well FET subject to THz radiation at plasmon frequency

    NASA Astrophysics Data System (ADS)

    Morgenstern Horing, Norman J.; Popov, Vyacheslav V.

    2006-04-01

    Recent experimental observations by X.G. Peralta and S.J. Allen, et al. of dc photoconductivity resonances in steady source-drain current subject to terahertz radiation in a grid-gated double-quantum well FET suggested an association with plasmon resonances. This association was definitively confirmed for some parameter ranges in our detailed electrodynamic absorbance calculations. In this paper we propose that the reason that the dc photoconductance resonances match the plasmon resonances in semiconductors is based on a nonlinear dynamic screening mechanism. In this, we employ a shielded potential approximation that is nonlinear in the terahertz field to determine the nonequilibrium Green's function and associated density perturbation that govern the nonequilibrium dielectric polarization of the medium. This ''conditioning'' of the system by the incident THz radiation results in resonant polarization response at the plasmon frequencies which, in turn, causes a sharp drop of the resistive shielded impurity scattering potentials and attendant increase of the dc source-drain current. This amounts to disabling the impurity scattering mechanism by plasmon resonant behavior in nonlinear screening.

  20. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

    DOE PAGES

    Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; ...

    2016-02-16

    Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry betweenmore » layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less