Sample records for gaas saturable absorber

  1. Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shang Gao

    2015-11-30

    A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJmore » and peak power of 2.8 kW. (control of laser radiation parameters)« less

  2. Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hader, J.; Moloney, J. V.; College of Optical Sciences, University of Arizona, Tucson, Arizona 85721

    2016-02-07

    Fully microscopic many-body calculations are used to study the influence of strong sub-picosecond pulses on the carrier distributions and corresponding optical response in saturable absorbers used for mode-locking—semiconductor (quantum well) saturable absorber mirrors (SESAMs) and single layer graphene based saturable absorber mirrors (GSAMs). Unlike in GSAMs, the saturation fluence and recovery time in SESAMs show a strong spectral dependence. While the saturation fluence in the SESAM is minimal at the excitonic bandgap, the optimal recovery time and least pulse distortion due to group delay dispersion are found for excitation higher in the first subband. For excitation near the SESAM bandgap,more » the saturation fluence is about one tenth of that in the GSAM. At energies above the bandgap, the fluences in both systems become similar. A strong dependence of the saturation fluence on the pulse width in both systems is caused by carrier relaxation during the pulse. The recovery time in graphene is found to be about two to four times faster than that in the SESAMs. The occurrence of negative differential transmission in graphene is shown to be caused by dopant related carriers. In SESAMs, a negative differential transmission is found when exciting below the excitonic resonance where excitation induced dephasing leads to an enhancement of the absorption. Comparisons of the simulation data to the experiment show a very good quantitative agreement.« less

  3. Graphene-clad microfibre saturable absorber for ultrafast fibre lasers.

    PubMed

    Liu, X M; Yang, H R; Cui, Y D; Chen, G W; Yang, Y; Wu, X Q; Yao, X K; Han, D D; Han, X X; Zeng, C; Guo, J; Li, W L; Cheng, G; Tong, L M

    2016-05-16

    Graphene, whose absorbance is approximately independent of wavelength, allows broadband light-matter interactions with ultrafast responses. The interband optical absorption of graphene can be saturated readily under strong excitation, thereby enabling scientists to exploit the photonic properties of graphene to realize ultrafast lasers. The evanescent field interaction scheme of the propagating light with graphene covered on a D-shaped fibre or microfibre has been employed extensively because of the nonblocking configuration. Obviously, most of the fibre surface is unused in these techniques. Here, we exploit a graphene-clad microfibre (GCM) saturable absorber in a mode-locked fibre laser for the generation of ultrafast pulses. The proposed all-surface technique can guarantee a higher efficiency of light-graphene interactions than the aforementioned techniques. Our GCM-based saturable absorber can generate ultrafast optical pulses within 1.5 μm. This saturable absorber is compatible with current fibre lasers and has many merits such as low saturation intensities, ultrafast recovery times, and wide wavelength ranges. The proposed saturable absorber will pave the way for graphene-based wideband photonics.

  4. Graphene-clad microfibre saturable absorber for ultrafast fibre lasers

    PubMed Central

    Liu, X. M.; Yang, H. R.; Cui, Y. D.; Chen, G. W.; Yang, Y.; Wu, X. Q.; Yao, X. K.; Han, D. D.; Han, X. X.; Zeng, C.; Guo, J.; Li, W. L.; Cheng, G.; Tong, L. M.

    2016-01-01

    Graphene, whose absorbance is approximately independent of wavelength, allows broadband light–matter interactions with ultrafast responses. The interband optical absorption of graphene can be saturated readily under strong excitation, thereby enabling scientists to exploit the photonic properties of graphene to realize ultrafast lasers. The evanescent field interaction scheme of the propagating light with graphene covered on a D-shaped fibre or microfibre has been employed extensively because of the nonblocking configuration. Obviously, most of the fibre surface is unused in these techniques. Here, we exploit a graphene-clad microfibre (GCM) saturable absorber in a mode-locked fibre laser for the generation of ultrafast pulses. The proposed all-surface technique can guarantee a higher efficiency of light–graphene interactions than the aforementioned techniques. Our GCM-based saturable absorber can generate ultrafast optical pulses within 1.5 μm. This saturable absorber is compatible with current fibre lasers and has many merits such as low saturation intensities, ultrafast recovery times, and wide wavelength ranges. The proposed saturable absorber will pave the way for graphene-based wideband photonics. PMID:27181419

  5. Consideration of velocity saturation in the design of GaAs varactor diodes

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Peatman, William C. B.; Zimmermann, Ruediger; Zimmermann, Ralph

    1993-01-01

    The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. Experimental data is presented which confirms that improved multiplier performance can be achieved.

  6. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Ortiz, F. E.; Mishurnyi, V.; Gorbatchev, A.; De Anda, F.; Prutskij, T.

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  7. Bistability By Self-Reflection In A Saturable Absorber

    NASA Astrophysics Data System (ADS)

    Roso-Franco, Luis

    1987-01-01

    Propagation of laser light through a saturable absorber is theoretically studied. Computed steady state solutions of the Maxwell equations describing the unidimensional propagation of a plane monochromatic wave without introducing the slowly-varying envelope approximation are presented showing how saturation effects can influence the absorption of the field. At a certain range of refractive index and extintion coefficients, computed solutions display a very susprising behaviour, and a self-reflected wave appears inside the absorber. This can be useful for a new kind of biestable device, similar to a standard bistable cavity but with the back mirror self-induced by the light.

  8. Investigations of Q-switching and mode locking in diode-pumped Nd:YVO4 laser with passive saturable absorbers

    NASA Astrophysics Data System (ADS)

    Kwiatkowski, Jacek; Jabczynski, Jan K.; Zendzian, Waldemar

    2005-03-01

    The saturable absorbers (Cr4+:YAG, GaAs and LiF crystals for 1064-nm wavelength, V3+:YAG crystals for 1340-nm respectively) were examined as passive Mode Lockers and Q-switches in diode pumped Nd:YVO4 lasers in the Z-type resonators. In each case, partially modulated long trains of QML pulses were observed. As a rule, envelopes with about 1 μs duration and more than 50% depth of modulation were observed. For stabilization of the mode locking trains nonlinear crystals (KTP or LBO) as negative feedback elements were inserted. The fully modulated QML trains for intracavity II harmonic conversion at 670-nm wavelength in V3+:YAG Q-switched Nd:YVO4 laser with LBO crystal were demonstrated.

  9. Stable high-power saturable absorber based on polymer-black-phosphorus films

    NASA Astrophysics Data System (ADS)

    Mao, Dong; Li, Mingkun; Cui, Xiaoqi; Zhang, Wending; Lu, Hua; Song, Kun; Zhao, Jianlin

    2018-01-01

    Black phosphorus (BP), a rising two-dimensional material with a layer-number-dependent direct bandgap of 0.3-1.5 eV, is very interesting for optoelectronics applications from near- to mid-infrared wavebands. In the atmosphere, few-layer BP tends to be oxidized or degenerated during interacting with lasers. Here, we fabricate few-layer BP nanosheets based on a liquid exfoliation method using N-methylpyrrolidone as the dispersion liquid. By incorporating BP nanosheets with polymers (polyvinyl alcohol or high-melting-point polyimide), two flexible filmy BP saturable absorbers are fabricated to realize passive mode locking in erbium-doped fiber lasers. The polymer-BP saturable absorber, especially the polyimide-BP saturable absorber, can prevent the oxidation or water-induced etching under high-power laser illuminations, providing a promising candidate for Q-switchers, mode lockers, and light modulators.

  10. Solid state saturable absorbers for Q-switching at 1 and 1.3μm: investigation and modeling

    NASA Astrophysics Data System (ADS)

    Šulc, Jan; Arátor, Pavel; Jelínková, Helena; Nejezchleb, Karel; Škoda, Václav; Kokta, Milan R.

    2008-02-01

    Yttrium and Lutecium garnets (YAG and LuAG) doped by Chromium or Vanadium ions (Cr 4+ or V 3+) were investigated as saturable absorbers potentially useful for passive Q-switching at wavelengths 1 μm and/or 1.3 μm. For comparison also color center saturable absorber LiF:F - II and Cobalt doped spinel (Co:MALO) were studied. Firstly, low power absorption spectra were recorded for all samples. Next, absorbers transmission in dependence on incident energy/power density was measured using the z-scan method. Crystals Cr:YAG, Cr:LuAG, V:YAG, and LiF:F - II were tested at wavelength 1064 nm. Therefore Alexandrite laser pumped Q-switched Nd:YAG laser was used as a radiation source (pulse length 6.9 ns, energy up to 1.5 mJ). Crystals V:YAG, V:LuAG, and Co:MALO were tested at wavelength 1338 nm. So diode pumped Nd:YAG/V:YAG microchip laser was used as a radiation source (pulse length 6.2 ns, energy up to 0.1 mJ). Using measured data fitting, and by their comparison with numerical model of a "thick" saturable absorber transmission for Q-switched Gaussian laser beam, following parameters were estimated: saturable absorber initial transmission T 0, saturation energy density w s, ground state absorption cross-section σ GSA, saturated absorber transmission T s, excited state absorption cross-section σ ESA, ratio γ = σ GSA/σ ESA, and absorbing ions density. For V:YAG crystal, a polarization dependence of T s was also investigated. With the help of rate equation numerical solution, an impact of saturable absorber parameters on generated Q-switched pulse properties was studied in plane wave approximation. Selected saturable absorbers were also investigated as a Q-switch and results were compared with the model.

  11. Period locking due to delayed feedback in a laser with saturable absorber.

    PubMed

    Carr, T W

    2003-08-01

    We consider laser with saturable absorber operating in the pulsating regime that is subject to delayed feedback. Alone, both the saturable absorber and delayed feedback cause the clockwise output to become unstable to periodic output via Hopf bifurcations. The delay feedback causes the laser pulse period to lock to an integer fraction of the feedback time. We derive a map from the original model to describe the periodic pulsations of the laser. Equations for the period of the laser predict the occurrence of the different locking states as well as the value of the pump when there is a switch between the locked states.

  12. Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Nakagawa, T.; Torizuka, K.; Sugaya, T.; Kobayashi, K.

    We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr4+:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.

  13. Gold nanorods saturable absorber for Q-switched Nd:GAGG lasers at 1 μm

    NASA Astrophysics Data System (ADS)

    Feng, Chao; Liu, Mingyi; Li, Yanbin; Gao, Xuejian; Kang, Zhe; Qin, Guanshi; Jia, Zhitai; Tao, Xutang; Song, Teng; Dun, Yangyang; Bai, Fen; Li, Ping; Wang, Qingpu; Fang, Jiaxiong

    2017-03-01

    A gold nanorod saturable absorber has been synthesized by the seed-mediated growth method characterized in detail. The absorption peak wavelength was 1080 nm, and the modulation depth was measured to be 9%. The performance of its Q-switched Nd:GAGG lasers at 1061 and 1106 nm has been systematically investigated, respectively. The corresponding shortest pulsewidths were 250 and 480 ns. Our experiment results proved that the GNR-SA is a promising saturable absorber for nanosecond bulk lasers.

  14. Dual-wavelength, mode-locked erbium-doped fiber laser employing a graphene/polymethyl-methacrylate saturable absorber.

    PubMed

    Lau, K Y; Abu Bakar, M H; Muhammad, F D; Latif, A A; Omar, M F; Yusoff, Z; Mahdi, M A

    2018-05-14

    Mode-locked fiber laser incorporating a saturable absorber is an attractive configuration due to its stability and simple structure. In this work, we demonstrate a dual-wavelength passively mode-locked erbium-doped fiber laser employing a graphene/polymethyl-methacrylate saturable absorber. A laser resonator is developed based on dual cavity architecture with unidirectional signal oscillation, which is connected by a fiber branch sharing a common gain medium and saturable absorber. Dual wavelength mode-locked fiber lasers are observed at approximately 1530 and 1560 nm with 22.6 mW pump power threshold. Soliton pulse circulates in the laser cavity with pulse duration of 900 and 940 fs at shorter and longer wavelengths, respectively. This work presents a viable option in developing a low threshold mode-locked laser source with closely spaced dual wavelength femtosecond pulses in the C-band wavelength region.

  15. Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

    PubMed

    Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

    2017-11-01

    In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

  16. Efficient and compact Q-switched green laser using graphene oxide as saturable absorber

    NASA Astrophysics Data System (ADS)

    Chang, Jianhua; Li, Hanhan; Yang, Zhenbo; Yan, Na

    2018-01-01

    A new type of graphene oxide (GO) is successfully prepared using an improved modified Hummers method. The Raman shift, X-ray diffraction (XRD), and scanning electron microscope (SEM) measurement techniques are used to characterize the GO. An efficient and compact Q-switched green laser based on Nd:YVO4/PPLN is demonstrated with a few-layered GO as the saturable absorber. Our experimental results show that such a few-layered GO saturable absorber allows for the generation of a stable Q-switched laser pulse centered at 532.1 nm with a 3 dB spectral bandwidth of 2.78 nm, a repetition rate of 71.4 kHz, and a pulse duration of 98 ns. The maximum average output power of 536 mW is obtained at the absorbed pump power of 5.16 W, corresponding to an optical conversion efficiency of 10.3%.

  17. Low-loss saturable absorbers based on tapered fibers embedded in carbon nanotube/polymer composites

    NASA Astrophysics Data System (ADS)

    Martinez, Amos; Al Araimi, Mohammed; Dmitriev, Artemiy; Lutsyk, Petro; Li, Shen; Mou, Chengbo; Rozhin, Alexey; Sumetsky, Misha; Turitsyn, Sergei

    2017-12-01

    The emergence of low-dimensional materials has opened new opportunities in the fabrication of compact nonlinear photonic devices. Single-walled carbon nanotubes were among the first of those materials to attract the attention of the photonics community owing to their high third order susceptibility, broadband operation, and ultrafast response. Saturable absorption, in particular, has become a widespread application for nanotubes in the mode-locking of a fiber laser where they are used as nonlinear passive amplitude modulators to initiate pulsed operation. Numerous approaches have been proposed for the integration of nanotubes in fiber systems; these can be divided into those that rely on direct interaction (where the nanotubes are sandwiched between fiber connectors) and those that rely on lateral interaction with the evanescence field of the propagating wave. Tapered fibers, in particular, offer excellent flexibility to adjust the nonlinearity of nanotube-based devices but suffer from high losses (typically exceeding 50%) and poor saturable to non-saturable absorption ratios (typically above 1:5). In this paper, we propose a method to fabricate carbon nanotube saturable absorbers with controllable saturation power, low-losses (as low as 15%), and large saturable to non-saturable loss ratios approaching 1:1. This is achieved by optimizing the procedure of embedding tapered fibers in low-refractive index polymers. In addition, this study sheds light in the operation of these devices, highlighting a trade-off between losses and saturation power and providing guidelines for the design of saturable absorbers according to their application.

  18. Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization.

    PubMed

    Orsila, Lasse; Härkönen, Antti; Hyyti, Janne; Guina, Mircea; Steinmeyer, Günter

    2014-08-01

    Measurement of nonlinear optical reflectivity of saturable absorber devices is discussed. A setup is described that enables absolute accuracy of reflectivity measurements better than 0.3%. A repeatability within 0.02% is shown for saturable absorbers with few-percent modulation depth. The setup incorporates an in situ knife-edge characterization of beam diameters, making absolute reflectivity estimations and determination of saturation fluences significantly more reliable. Additionally, several measures are discussed to substantially improve the reliability of the reflectivity measurements. At its core, the scheme exploits the limits of state-of-the-art digital lock-in technology but also greatly benefits from a fiber-based master-oscillator power-amplifier source, the use of an integrating sphere, and simultaneous comparison with a linear reflectivity standard.

  19. Low threshold linear cavity mode-locked fiber laser using microfiber-based carbon nanotube saturable absorber

    NASA Astrophysics Data System (ADS)

    Lau, K. Y.; Ng, E. K.; Abu Bakar, M. H.; Abas, A. F.; Alresheedi, M. T.; Yusoff, Z.; Mahdi, M. A.

    2018-06-01

    In this work, we demonstrate a linear cavity mode-locked erbium-doped fiber laser in C-band wavelength region. The passive mode-locking is achieved using a microfiber-based carbon nanotube saturable absorber. The carbon nanotube saturable absorber has low saturation fluence of 0.98 μJ/cm2. Together with the linear cavity architecture, the fiber laser starts to produce soliton pulses at low pump power of 22.6 mW. The proposed fiber laser generates fundamental soliton pulses with a center wavelength, pulse width, and repetition rate of 1557.1 nm, 820 fs, and 5.41 MHz, respectively. This mode-locked laser scheme presents a viable option in the development of low threshold ultrashort pulse system for deployment as a seed laser.

  20. Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation.

    PubMed

    Baylam, Isinsu; Balci, Osman; Kakenov, Nurbek; Kocabas, Coskun; Sennaroglu, Alphan

    2016-03-01

    We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.

  1. Graphene oxide vs. reduced graphene oxide as saturable absorbers for Er-doped passively mode-locked fiber laser.

    PubMed

    Sobon, Grzegorz; Sotor, Jaroslaw; Jagiello, Joanna; Kozinski, Rafal; Zdrojek, Mariusz; Holdynski, Marcin; Paletko, Piotr; Boguslawski, Jakub; Lipinska, Ludwika; Abramski, Krzysztof M

    2012-08-13

    In this work we demonstrate comprehensive studies on graphene oxide (GO) and reduced graphene oxide (rGO) based saturable absorbers (SA) for mode-locking of Er-doped fiber lasers. The paper describes the fabrication process of both saturable absorbers and detailed comparison of their parameters. Our results show, that there is no significant difference in the laser performance between the investigated SA. Both provided stable, mode-locked operation with sub-400 fs soliton pulses and more than 9 nm optical bandwidth at 1560 nm center wavelength. It has been shown that GO might be successfully used as an efficient SA without the need of its reduction to rGO. Taking into account simpler manufacturing technology and the possibility of mass production, GO seems to be a good candidate as a cost-effective material for saturable absorbers for Er-doped fiber lasers.

  2. Hybrid mode-locked fiber ring laser using graphene and charcoal nanoparticles as saturable absorbers

    NASA Astrophysics Data System (ADS)

    Hu, Hongyu; Zhang, Xiang; Li, Wenbo; Dutta, Niloy K.

    2016-05-01

    A fiber ring laser which implements hybrid mode locking technique has been proposed and experimentally demonstrated to generate pulse train at 20 GHz repetition rate with ultrashort pulse width. Graphene and charcoal nano-particles acting as passive mode lockers are inserted into a rational harmonic mode-locked fiber laser to improve the performance. With graphene saturable absorbers, the pulse duration is shortened from 5.3 ps to 2.8 ps, and with charcoal nano-particles, it is shortened to 3.2 ps. The RF spectra show that supermode noise can be removed in the presence of the saturable absorbers. Numerical simulation of the pulse transmission has also been carried out, which shows good agreement with the experimental results.

  3. Black phosphorus saturable absorber for a diode-pumped passively Q-switched Er:CaF2 mid-infrared laser

    NASA Astrophysics Data System (ADS)

    Li, Chun; Liu, Jie; Guo, Zhinan; Zhang, Han; Ma, Weiwei; Wang, Jingya; Xu, Xiaodong; Su, Liangbi

    2018-01-01

    A multilayer black phosphorus, as a novel two dimensional saturable absorber, has superb saturable absorption properties for a Er:CaF2 solid-state pulse laser. The pulse laser is realized at mid-infrared region with the passively Q-switched technology by a diode-pumping. The high-quality black phosphorus saturable absorber is fabricated by liquid phase exfoliation method. The pulse laser generates the pulses operation with the pulse duration of 954.8 ns, the repetition rate of 41.93 kHz, the pulse energy of 4.25 μJ and the peak power of 4.45 W. Our work demonstrates that black phosphorus could be used as a kind of efficient mid-infrared region optical absorber for ultrafast photonics.

  4. All-fiber wavelength-tunable picosecond nonlinear reflectivity measurement setup for characterization of semiconductor saturable absorber mirrors

    NASA Astrophysics Data System (ADS)

    Viskontas, K.; Rusteika, N.

    2016-09-01

    Semiconductor saturable absorber mirror (SESAM) is the key component for many passively mode-locked ultrafast laser sources. Particular set of nonlinear parameters is required to achieve self-starting mode-locking or avoid undesirable q-switch mode-locking for the ultra-short pulse laser. In this paper, we introduce a novel all-fiber wavelength-tunable picosecond pulse duration setup for the measurement of nonlinear properties of saturable absorber mirrors at around 1 μm center wavelength. The main advantage of an all-fiber configuration is the simplicity of measuring the fiber-integrated or fiber-pigtailed saturable absorbers. A tunable picosecond fiber laser enables to investigate the nonlinear parameters at different wavelengths in ultrafast regime. To verify the capability of the setup, nonlinear parameters for different SESAMs with low and high modulation depth were measured. In the operating wavelength range 1020-1074 nm, <1% absolute nonlinear reflectivity accuracy was demonstrated. Achieved fluence range was from 100 nJ/cm2 to 2 mJ/cm2 with corresponding intensity from 10 kW/cm2 to 300 MW/cm2.

  5. Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

    PubMed Central

    Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

    2017-01-01

    We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies. PMID:28211471

  6. A practical topological insulator saturable absorber for mode-locked fiber laser

    PubMed Central

    Yan, Peiguang; Lin, Rongyong; Ruan, Shuangchen; Liu, Aijiang; Chen, Hao; Zheng, Yuequn; Chen, Sifan; Guo, Chunyu; Hu, Juguang

    2015-01-01

    A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm2, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication. PMID:25732598

  7. Efficient graphene saturable absorbers on D-shaped optical fiber for ultrashort pulse generation

    PubMed Central

    Zapata, J. D.; Steinberg, D.; Saito, L. A. M.; de Oliveira, R. E. P.; Cárdenas, A. M.; de Souza, E. A. Thoroh

    2016-01-01

    We demonstrated a method to construct high efficiency saturable absorbers based on the evanescent light field interaction of CVD monolayer graphene deposited on side-polished D-shaped optical fiber. A set of samples was fabricated with two different core-graphene distances (0 and 1 μm), covered with graphene ranging between 10 and 25 mm length. The mode-locking was achieved and the best pulse duration was 256 fs, the shortest pulse reported in the literature with CVD monolayer graphene in EDFL. As result, we find a criterion between the polarization relative extinction ratio in the samples and the pulse duration, which relates the better mode-locking performance with the higher polarization extinction ratio of the samples. This criterion also provides a better understanding of the graphene distributed saturable absorbers and their reproducible performance as optoelectronic devices for optical applications. PMID:26856886

  8. Fabrication of a saturable absorber WS2 and its mode locking in solid-state laser

    NASA Astrophysics Data System (ADS)

    Zhang, Chun-Yu; Zhang, Ling; Tang, Xiao-Ying; Yang, Ying-Ying

    2018-04-01

    We report on a passively mode-locked Nd : LuVO4 laser using a type saturable absorber of tungsten disulfide (WS2) fabricated by chemical vapor deposition method. At the pump power of 3.3 W, 1.18-W average output power of continuous-wave mode-locked laser with optical conversion efficiency of 36% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser based on WS2. The repetition rate of passively mode-locked pulse was 80 MHz with the pulse energy of 14.8 nJ. Our experimental results show that WS2 is an excellent type of saturable absorber.

  9. Watt-level passively Q-switched double-cladding fiber laser based on graphene oxide saturable absorber.

    PubMed

    Yu, Zhenhua; Song, Yanrong; Dong, Xinzheng; Li, Yanlin; Tian, Jinrong; Wang, Yonggang

    2013-10-10

    A watt-level passively Q-switched ytterbium-doped double-cladding fiber laser with a graphene oxide (GO) absorber was demonstrated. The structure of the GO saturable absorber mirror (GO-SAM) was of the sandwich type. A maximum output power of 1.8 W was obtained around a wavelength of 1044 nm. To the best of our knowledge, this is the highest output power in Q-switched fiber lasers based on a GO saturable absorber. The pure GO was protected from the oxygen in the air so that the damage threshold of the GO-SAM was effectively raised. The gain fiber was a D-shaped ytterbium-doped double-cladding fiber. The pulse repetition rates were tuned from 120 to 215 kHz with pump powers from 3.89 to 7.8 W. The maximum pulse energy was 8.37 μJ at a pulse width of 1.7 μs.

  10. Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

    PubMed

    Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

    2016-08-15

    The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

  11. Low-loss flake-graphene saturable absorber mirror for laser mode-locking at sub-200-fs pulse duration

    NASA Astrophysics Data System (ADS)

    Cunning, B. V.; Brown, C. L.; Kielpinski, D.

    2011-12-01

    Saturable absorbers are a key component for mode-locking femtosecond lasers. Polymer films containing graphene flakes have recently been used in transmission as laser mode-lockers but suffer from high nonsaturable loss, limiting their application in low-gain lasers. Here, we present a saturable absorber mirror based on a film of pure graphene flakes. The device is used to mode lock an erbium-doped fiber laser, generating pulses with state-of-the-art, sub-200-fs duration. The laser characteristic indicates that the film exhibits low nonsaturable loss (13% per pass) and large absorption modulation depth (45% of low-power absorption).

  12. Diode-pumped passively Q-switched Nd:YAG ceramic laser with a gold nanotriangles saturable absorber at 1 µm

    NASA Astrophysics Data System (ADS)

    Bai, Jinxi; Li, Ping; Chen, Xiaohan; Guo, Lei; Wang, Lili; Liu, Binghai

    2017-08-01

    Passively Q-switched Nd:YAG ceramic lasers at 1064 and 1123 nm are demonstrated based on a gold nanotriangles saturable absorber (GNTs-SA) for the first time. The maximum average output power reaches 226 mW at 1064 nm and 172 mW at 1123 nm with corresponding shortest pulse widths and maximum pulse repetition rates of (179 ns, 320 kHz) and (231 ns, 457 kHz), respectively. Our results prove that the GNTs-SA is a promising saturable absorber around the 1-µm region.

  13. Nanosecond-pulsed Q-switched Nd:YAG laser at 1064 nm with a gold nanotriangle saturable absorber

    NASA Astrophysics Data System (ADS)

    Chen, Xiaohan; Li, Ping; Dun, Yangyang; Song, Teng; Ma, Baomin

    2018-06-01

    Gold nanotriangles (GNTs) were successfully employed as a saturable absorber (SA) to achieve passively Q-switched lasers for the first time. The performance of the Q-switched Nd:YAG laser at 1064 nm has been systematically investigated. The corresponding shortest pulsewidth, the threshold pump power and the maximum Q-switched average output power were 275.5 ns, 1.37 W, and 171 mW, respectively. To our knowledge, this is the shortest pulsewidth and the lowest threshold in a passively Q-switched laser at approximately 1.1 µm based on a gold nanoparticle SA (GNPs-SA). Our experimental results proved that the GNTs-SA can be used as a promising saturable absorber for nanosecond-pulsed lasers.

  14. Impacts of doping concentration on the saturable characteristics of Tm-Ho codoped fiber saturable absorber

    NASA Astrophysics Data System (ADS)

    Tao, Mengmeng; Feng, Guobin; Yu, Ting; Ye, Xisheng; Wang, Zhenbao; Shen, Yanlong; Zhao, Jun

    2018-03-01

    Impacts of Tm ion concentration and Ho ion concentration on the saturable behaviors of Tm-Ho codoped fiber saturable absorbers and the output characteristics of the passively Q-switched laser systems are investigated and analyzed both at the initial lasing state and the stable passive Q-switching state. Simulations show that, varying concentrations of Tm and Ho ions have different impacts on the temporal evolution processes but similar effects on the macroscopic characteristics of the laser system. The root for the impacts of dopant concentrations is the population of the 3H6 energy level and the cavity loss it induces. For Tm ions, the rise of the Tm concentration improves the population of the 3H6 energy level directly, while, for Ho ions, higher Ho concentration leads to larger recovery rate of the 3H6 energy level, thus increasing the population of the 3H6 energy level indirectly. As for limited total dopant concentration, the Tm:Ho concentration ratio can be optimized for different applications.

  15. Passively mode-locked soliton femtosecond pulses employing graphene saturable absorber

    NASA Astrophysics Data System (ADS)

    Lau, K. Y.; Muhammad, F. D.; Latif, A. A.; Abu Bakar, M. H.; Yusoff, Z.; Mahdi, M. A.

    2017-09-01

    We demonstrate a passively mode-locked fiber laser incorporating graphene thin film (GTF) as saturable absorber (SA). The SA is fabricated by sandwiching the GTF between two single mode fiber ferrules through a fiber adaptor. The transmission loss at 1560 nm and non-linear saturation absorption modulation depth for GTF-SA are 0.8 dB and 2.90%, respectively. An erbium-doped fiber laser cavity is constructed to verify the functionality of GTF-SA and is designed to have net anomalous dispersion. It generates large spectral width of 4.99 nm with pulse repetition rate of 9.655 MHz and pulse width of 670 fs. Net anomalous dispersion and time bandwidth product higher than the sech2 transform-limited pulse validate the experimental result. In short, we demonstrate high performance GTF-SA that is able to generate ultrafast pulse duration in femtosecond range effortlessly with simple and green SA fabrication procedures.

  16. Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wanke, Michael Clement; Cederberg, Jeffrey George; Alliman, Darrell L.

    2010-05-01

    Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare differentmore » growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.« less

  17. All-optical associative memory using photorefractive crystals and a saturable absorber

    NASA Astrophysics Data System (ADS)

    Duelli, Markus; Cudney, Roger S.; Keller, Claude; Guenter, Peter

    1995-07-01

    We report on the investigation of a new configuration of an all-optical associative memory. The images to be recalled associatively are stored in a LiNbO3 crystal via angular multiplexing. Thresholding of the reconstructed reference beams during associative readout is achieved by using a saturable absorber with an intensity-tunable threshold. We demonstrate associative readout and error correction for 10 strongly overlapping black-and-white images. Associative recall and full reconstruction is performed when only 1/500 of the image stored is entered.

  18. Q-switched Yb3+:YAG laser using plasmonic Cu2-xSe quantum dots as saturable absorbers

    NASA Astrophysics Data System (ADS)

    Wang, Yimeng; Zhan, Yi; Lee, Sooho; Wang, Li; Zhang, Xinping

    2018-04-01

    Cu2-xSe quantum dots (QDs) were synthesized by organometallic synthesis methods. Due to heavy self-doping, the Cu2-xSe QDs exhibit particle plasmon resonance in the near-infrared. Transient absorption spectroscopic investigation revealed strong nonlinear optical absorption and bleaching performance of the QDs under femtosecond pulse excitation, which enabled the Cu2-xSe QDs to be excellent saturable absorbers and applied in Q-switched or mode-locked lasers. A passively Q-switched Yb3+:YAG solid-state laser at 1.03 μm was achieved by coating Cu2-xSe QDs as saturable absorbers onto one of the output coupler of the V-shaped linear cavity.

  19. Wavelength-versatile graphene-gold film saturable absorber mirror for ultra-broadband mode-locking of bulk lasers.

    PubMed

    Ma, Jie; Xie, Guoqiang; Lv, Peng; Gao, Wenlan; Yuan, Peng; Qian, Liejia; Griebner, Uwe; Petrov, Valentin; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

    2014-05-23

    An ultra-broadband graphene-gold film saturable absorber mirror (GG-SAM) with a spectral coverage exceeding 1300 nm is experimentally demonstrated for mode-locking of bulk solid-state lasers. Owing to the p-type doping effect caused by graphene-gold film interaction, the graphene on gold-film substrate shows a remarkably lower light absorption relative to pristine graphene, which is very helpful to achieve continuous-wave mode-locking in low-gain bulk lasers. Using the GG-SAM sample, stable mode-locking is realized in a Yb:YCOB bulk laser near 1 μm, a Tm:CLNGG bulk laser near 2 μm and a Cr:ZnSe bulk laser near 2.4 μm. The saturable absorption is characterised at an intermediate wavelength of 1.56 μm by pump-probe measurements. The as-fabricated GG-SAM with ultra-broad bandwidth, ultrafast recovery time, low absorption, and low cost has great potential as a universal saturable absorber mirror for mode-locking of various bulk lasers with unprecedented spectral coverage.

  20. Wavelength-Versatile Graphene-Gold Film Saturable Absorber Mirror for Ultra-Broadband Mode-Locking of Bulk Lasers

    PubMed Central

    Ma, Jie; Xie, Guoqiang; Lv, Peng; Gao, Wenlan; Yuan, Peng; Qian, Liejia; Griebner, Uwe; Petrov, Valentin; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

    2014-01-01

    An ultra-broadband graphene-gold film saturable absorber mirror (GG-SAM) with a spectral coverage exceeding 1300 nm is experimentally demonstrated for mode-locking of bulk solid-state lasers. Owing to the p-type doping effect caused by graphene-gold film interaction, the graphene on gold-film substrate shows a remarkably lower light absorption relative to pristine graphene, which is very helpful to achieve continuous-wave mode-locking in low-gain bulk lasers. Using the GG-SAM sample, stable mode-locking is realized in a Yb:YCOB bulk laser near 1 μm, a Tm:CLNGG bulk laser near 2 μm and a Cr:ZnSe bulk laser near 2.4 μm. The saturable absorption is characterised at an intermediate wavelength of 1.56 μm by pump-probe measurements. The as-fabricated GG-SAM with ultra-broad bandwidth, ultrafast recovery time, low absorption, and low cost has great potential as a universal saturable absorber mirror for mode-locking of various bulk lasers with unprecedented spectral coverage. PMID:24853072

  1. Consistent characterization of semiconductor saturable absorber mirrors with single-pulse and pump-probe spectroscopy.

    PubMed

    Fleischhaker, R; Krauss, N; Schättiger, F; Dekorsy, T

    2013-03-25

    We study the comparability of the two most important measurement methods used for the characterization of semiconductor saturable absorber mirrors (SESAMs). For both methods, single-pulse spectroscopy (SPS) and pump-probe spectroscopy (PPS), we analyze in detail the time-dependent saturation dynamics inside a SESAM. Based on this analysis, we find that fluence-dependent PPS at complete spatial overlap and zero time delay is equivalent to SPS. We confirm our findings experimentally by comparing data from SPS and PPS of two samples. We show how to interpret this data consistently and we give explanations for possible deviations.

  2. Black phosphorus saturable absorber for ultrashort pulse generation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M.

    Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation.more » The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.« less

  3. All-fiber thulium/holmium-doped mode-locked laser by tungsten disulfide saturable absorber

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Zheng, Xin; Yin, Ke; Cheng, Xiang'ai; Jiang, Tian

    2017-01-01

    A passively mode-locked thulium/holmium-doped fiber laser (THDFL) based on tungsten disulfide (WS2) saturable absorber (SA) was demonstrated. The WS2 nanosheets were prepared by liquid phase exfoliation method and the SA was fabricated by depositing the few-layer WS2 nanosheets on the surface of a fiber taper. The modulation depth, saturable intensity, and non-saturable loss of this SA were measured to be 8.2%, 0.82 GW cm-2, and 29.4%, respectively. Based on this SA, a stable mode-locked laser operated at 1.91 µm was achieved with pulse duration of 825 fs and repetition rate of 15.49 MHz, and signal-to-noise ratio (SNR) of 67 dB. Meanwhile, by increasing the pump power and adjusting the position of polarization controller, harmonic mode-locking operations were obtained. These results showed that the WS2 nanosheet-based SA could be served as a desirable candidate for a short-pulse mode locker at 2 µm wavelength.

  4. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  5. Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

    NASA Astrophysics Data System (ADS)

    Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

    2017-11-01

    Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

  6. Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

    PubMed

    Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

    2017-11-24

    Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

  7. Diode-pumped passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide nanosheets saturable absorber at 1066 nm

    NASA Astrophysics Data System (ADS)

    Li, M. X.; Jin, G. Y.; Li, Y.

    2018-05-01

    In this paper, we investigated the passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide (WS2) saturable absorber (SA). The preparation method of WS2 SA was to attach the WS2-alcohol dispersion onto the quartz substrates. The diode-pumped passively Q-switched Nd:GdTaO4 laser operated at a central wavelength of 1066 nm. The stable pulse output could be obtained at the single pulse width of 560 ns. In a word, WS2 seems to be a suitable saturable absorber for solid state lasers.

  8. Graphene saturable absorber mirror for ultra-fast-pulse solid-state laser.

    PubMed

    Xu, Jin-Long; Li, Xian-Lei; Wu, Yong-Zhong; Hao, Xiao-Peng; He, Jing-Liang; Yang, Ke-Jian

    2011-05-15

    High-quality graphene sheets with lateral size over 20 μm have been obtained by bath sonicating after subjecting the wormlike graphite marginally to mixed oxidizer. To date, to our knowledge, they are the largest graphene sheets prepared by exfoliation in the liquid phase. A saturable absorber mirror was fabricated based on these sheets. We exploited it to realize mode-locking operation in a diode-pumped Nd:GdVO(4) laser. A pulse duration of 16 ps was produced with an average power of 360 mW and a highest pulse energy of 8.4 nJ for a graphene mode-locked laser. © 2011 Optical Society of America

  9. Low threshold L-band mode-locked ultrafast fiber laser assisted by microfiber-based carbon nanotube saturable absorber

    NASA Astrophysics Data System (ADS)

    Lau, K. Y.; Ng, E. K.; Abu Bakar, M. H.; Abas, A. F.; Alresheedi, M. T.; Yusoff, Z.; Mahdi, M. A.

    2018-04-01

    We demonstrate a passively mode-locked erbium-doped fiber laser in L-band wavelength region with low mode-locking threshold employing a 1425 nm pump wavelength. The mode-locking regime is generated by microfiber-based saturable absorber using carbon nanotube-polymer composite in a ring cavity. This carbon nanotube saturable absorber shows saturation intensity of 9 MW/cm2. In this work, mode-locking laser threshold is observed at 36.4 mW pump power. At the maximum pump power of 107.6 mW, we obtain pulse duration at full-width half-maximum point of 490 fs and time bandwidth product of 0.33, which corresponds to 3-dB spectral bandwidth of 5.8 nm. The pulse repetition rate remains constant throughout the experiment at 5.8 MHz due to fixed cavity length of 35.5 m. Average output power and pulse energy of 10.8 mW and 1.92 nJ are attained respectively through a 30% laser output extracted from the mode-locked cavity. This work highlights the feasibility of attaining a low threshold mode-locked laser source to be employed as seed laser in L-band wavelength region.

  10. Subnanosecond Tm:KLuW microchip laser Q-switched by a Cr:ZnS saturable absorber.

    PubMed

    Loiko, Pavel; Serres, Josep Maria; Mateos, Xavier; Yumashev, Konstantin; Yasukevich, Anatoly; Petrov, Valentin; Griebner, Uwe; Aguiló, Magdalena; Díaz, Francesc

    2015-11-15

    Passive Q-switching of a compact Tm:KLu(WO(4))(2) microchip laser diode pumped at 805 nm is demonstrated with a polycrystalline Cr(2+):ZnS saturable absorber. This laser generates subnanosecond (780 ps) pulses with a pulse repetition frequency of 5.6 kHz at 1846.6 nm, the shortest pulse duration ever achieved by Q-switching of ~2 μm lasers. The maximum average output power is 146 mW with a slope efficiency of 21% with respect to the absorbed power. This corresponds to a pulse energy of 25.6 μJ and a peak power of 32.8 kW.

  11. All-polarization maintaining erbium fiber laser based on carbon nanowalls saturable absorber

    NASA Astrophysics Data System (ADS)

    Kurata, Shintaro; Izawa, Jun; Kawaguchi, Norihito

    2018-02-01

    We report a soliton mode locked femtosecond oscillation with all-polarization maintaining erbuim doped fiber laser based on Carbon Nanowalls saturable absorber (CNWs SA). To improve the stability and the capability of the oscillator, the all-polarization maintaining(all-PM) fiber is generally used since PM fiber is tolerant of stretches and bends. The saturable absorber is an optical device that placed in a laser cavity to suppress continuous wave operation to promote cooperation between many modes to sustain ultrashort pulse operation. We apply CNWs for the material of SAs in our oscillator. CNWs are one of the nanocarbon materials, which are a high-aspect-ratio structure in the cross-section, where, although their width and height range in a few micrometers, the thickness is as small as ten nanometers or so. A sheet of CNWs is made up of nano-size graphite grain aggregates. Then CNWs structure is expected to have a high absorption to the incident light and large modulation depth due to a small number of carbon layers as well as CNT and Graphene. With this all-PM fiber laser oscillator based on CNWs SA, the soliton mode-locked laser oscillated with 66.3MHz repetition frequency and its spectrum width is 5.6nm in FWHM. Average output power is 8.1mW with 122.5mW laser diode pump power. In addition, the laser amplification system with erbium-doped fiber is constructed and amplifies the femtosecond pulse laser into 268.2mW and 3000mW pumping power.

  12. 808-nm diode-pumped dual-wavelength passively Q-switched Nd:LuLiF4 laser with Bi-doped GaAs

    NASA Astrophysics Data System (ADS)

    Li, S. X.; Li, T.; Li, D. C.; Zhao, S. Z.; Li, G. Q.; Hang, Y.; Zhang, P. X.; Li, X. Y.; Qiao, H.

    2015-09-01

    Diode-pumped CW and passively Q-switched Nd:LuLiF4 lasers with stable, synchronous dual-wavelength operations near 1047 and 1053 nm were demonstrated for the first time. The maximal CW output power of 821 mW was obtained at an incident pump power of 6.52 W. Employing high quality Bi-doped GaAs as saturable absorber, stable dual-wavelength Q-switched operation was realized. Under 6.52 W incident pump power, the minimal pulse duration of 1.5 ns, the largest single pulse energy of 11.32 μJ, and the highest peak power of 7.25 kW were achieved.

  13. All-fiber passively Q-switched thulium-doped fiber laser by using a holmium-doped fiber as saturable absorber

    NASA Astrophysics Data System (ADS)

    Durán Sánchez, M.; Álvarez-Tamayo, R. I.; Posada-Ramírez, B.; Alaniz-Baylón, J.; Bravo-Huerta, E.; Santiago-Hernández, H.; Hernández-Arriaga, M. V.; Bello-Jiménez, Miguel; Ibarra-Escamilla, B.; Kuzin, E. A.

    2018-02-01

    We report a linear cavity all-fiber passive Q-switched thulium-doped fiber laser operating at the 2 μm wavelength range. The laser configuration is based on a thulium-doped fiber used as a gain medium and an unpumped segment of holmium-doped fiber which acts as a fiber saturable absorber. The cavity is formed by a fiber optical loop mirror and the flat end facet of the holmium-doped fiber. The fiber segments as saturable absorber is a 1-m long single mode doubleclad holmium-doped fiber. Q-switched pulses are obtained at the wavelength of 2024.5 nm with a pulse width of 1.1 μs. The pulse repetition rate increases as a linear function of the applied pump power. The maximum pulse repetition rate of 100 kHz was obtained with a pump power of 2.4 W.

  14. All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

    PubMed

    Pradhan, Rajib

    2014-06-10

    This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

  15. CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

    PubMed Central

    Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

    2017-01-01

    In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber. PMID:28368014

  16. Generation of an ultrafast femtosecond soliton fiber laser by carbon nanotube as saturable absorber

    NASA Astrophysics Data System (ADS)

    Salim, M. A. M.; Ahmad, H.; Harun, S. W.; Bidin, N.; Krishnan, G.

    2018-05-01

    This paper reports the demonstration of ultrafast fiber laser in a simple erbium-doped fiber (EDF) laser that employed a carbon nanotube (CNT) thin film saturable absorber (SA) to generate a stable soliton pulse. The repetition rate of 10.8 MHz pulse consistently achieved has narrowest pulse width of 640 fs and 1555.78 nm central wavelength for an hour operation in room temperature. This proposed setup has the capability for reliable and stable system features.

  17. Reduction of timing jitter in a Q-Switched Nd:YAG laser by direct bleaching of a Cr4+:YAG saturable absorber.

    PubMed

    Cole, Brian; Goldberg, Lew; Trussell, C Ward; Hays, Alan; Schilling, Bradley W; McIntosh, Chris

    2009-02-02

    A method for optical triggering of a Q-switched Nd:YAG laser by direct bleaching of a Cr:YAG saturable absorber is described. This method involves the bleaching of a thin sheet of the saturable absorber from a direction orthogonal to the lasing axis using a single laser diode bar, where the Cr:YAG transmission increased from a non-bleached value of 47% to a bleached value of 63%. For steady state operation of a passively Q-switched laser (PRF=10 Hz), the pulse-to-pulse timing jitter showed approximately 12X reduction in standard deviation, from 241 nsec for free running operation to 20 nsec with optical triggering.

  18. Passively mode-locked Yb fiber laser with PbSe colloidal quantum dots as saturable absorber.

    PubMed

    Wei, Kaihua; Fan, Shanhui; Chen, Qingguang; Lai, Xiaomin

    2017-10-16

    A passively mode-locked Yb fiber laser using PbSe colloidal quantum dots (CQDs) as saturable absorber (SA) is experimentally demonstrated. An all-fiber experimental scheme was designed to understand the SA property of PbSe CQDs. The non-saturable loss, modulation depth, and saturable intensity of SA measured were 23%, 7%, and 12 MW/cm 2 , respectively. The PbSe CQDs were sandwiched in a fiber connector, which was further inserted into the Yb fiber laser for mode-locking. As the pump power up to 110 mW, the self-starting mode-locking pulses were observed. Under the pump power of 285 mW, a maximum average laser power with fundamental mode-locking operation was obtained to be 21.3 mW. In this situation, the pulse full width at half maximum (FWHM), pulse repetition rate, and spectral FWHM were measured to be 70 ps, 8.3 MHz, and 4.5 nm, respectively.

  19. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    NASA Astrophysics Data System (ADS)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  20. Yb- and Er-doped fiber laser Q-switched with an optically uniform, broadband WS2 saturable absorber

    PubMed Central

    Zhang, M.; Hu, Guohua; Hu, Guoqing; Howe, R. C. T.; Chen, L.; Zheng, Z.; Hasan, T.

    2015-01-01

    We demonstrate a ytterbium (Yb) and an erbium (Er)-doped fiber laser Q-switched by a solution processed, optically uniform, few-layer tungsten disulfide saturable absorber (WS2-SA). Nonlinear optical absorption of the WS2-SA in the sub-bandgap region, attributed to the edge-induced states, is characterized by 3.1% and 4.9% modulation depths with 1.38 and 3.83 MW/cm2 saturation intensities at 1030 and 1558 nm, respectively. By integrating the optically uniform WS2-SA in the Yb- and Er-doped laser cavities, we obtain self-starting Q-switched pulses with microsecond duration and kilohertz repetition rates at 1030 and 1558 nm. Our work demonstrates broadband sub-bandgap saturable absorption of a single, solution processed WS2-SA, providing new potential efficacy for WS2 in ultrafast photonic applications. PMID:26657601

  1. Passive mode locking of a Nd:YAG laser with a thin gelatine-film saturable absorber containing organic-dye J-aggregates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Avdeeva, V I; Shapiro, Boris I; Kuch'yanov, Aleksandr S

    2003-06-30

    Ultrashort pulses of duration {approx}13 ps are first obtained in a passively mode-locked Nd:YAG laser with a negative feedback using a thin gelatine-film saturable absorber containing organic-dye J-aggregates. (control of laser radiation parameters)

  2. Direct growth of graphene on quartz substrate as saturable absorber for femtosecond solid-state laser

    NASA Astrophysics Data System (ADS)

    Xu, S. C.; Man, B. Y.; Jiang, S. Z.; Chen, C. S.; Liu, M.; Yang, C.; Gao, S. B.; Feng, D. J.; Hu, G. D.; Huang, Q. J.; Chen, X. F.; Zhang, C.

    2014-08-01

    We present a novel method for the direct metal-free growth of graphene on quartz substrate. The direct-grown graphene yields excellent nonlinear saturable absorption properties and is demonstrated to be suitable as a saturable absorber (SA) for an ultrafast solid-state laser. Nearly Fourier-limited 367 fs was obtained at a central wavelength of 1048 nm with a repetition rate of 105.7 MHz. At a pump power of 7.95 W, the average output power was 1.93 W and the highest pulse energy reached 18.3 nJ, with a peak power of 49.8 kW. Our work opens an easy route for making a reliable graphene SA with a mode-locking technique and also displays an exciting prospect in making low-cost and ultrafast lasers.

  3. Optical triggering of a Q-switched Nd:YAG laser via transverse bleaching of a Cr:YAG saturable absorber.

    PubMed

    Cole, Brian; Lei, Jonathan; DiLazaro, Tom; Schilling, Bradley; Goldberg, Lew

    2009-11-01

    Optical triggering via direct bleaching of a Cr:YAG saturable absorber was applied to a monolithic Nd:YAG/Cr:YAG laser crystal. The method uses a single laser diode bar to bleach a thin sheet within the saturable absorber from a direction orthogonal to the lasing axis. By placing the Q-switch at the time corresponding to the steepest slope (dT/dt) for change in transmission during bleaching, the pulse-to-pulse timing jitter showed a 13.2x reduction in standard deviation, from 132 ns for free-running operation to 10 ns with optical triggering. We measured that a fluence of 60 kW/cm(2) was sufficient to enable optical triggering, where a diode appropriately sized for the length of the Cr:YAG (approximately 3 mm) would then require only approximately 150 W of optical power over a 1-2 micros duration to enable effective jitter reduction. Additionally, we measured an increase in optical-to-optical efficiency with optical triggering, where the efficiency improved from 12% to 13.5%.

  4. Stabilized single-longitudinal-mode erbium fibre laser employing silicon-micro-ring resonator and saturable absorber

    NASA Astrophysics Data System (ADS)

    Hsu, Yung; Yeh, Chien-Hung; Chow, Chi-Wai; Chang, Yuan-Chia; Cheng, Hao-Yun

    2018-07-01

    In the paper, a wavelength-tunable erbium-doped fiber (EDF) ring laser with stable single-longitudinal-mode (SLM) oscillation is proposed and investigated. Here, a silicon-micro-ring-resonator can be applied in a laser cavity for tuning wavelength in the C-band range. To complete the SLM oscillation, an unpumped EDF-based saturable absorber is used to act as ultra-narrowband filter for suppressing other oscillation modes. Additionally, the output stabilities of power and wavelength in the proposed EDF ring laser are also executed and discussed.

  5. Femtosecond solid-state laser based on a few-layered black phosphorus saturable absorber.

    PubMed

    Su, Xiancui; Wang, Yiran; Zhang, Baitao; Zhao, Ruwei; Yang, Kejian; He, Jingliang; Hu, Qiangqiang; Jia, Zhitai; Tao, Xutang

    2016-05-01

    In this Letter, a high-quality, few-layered black phosphorus (BP) saturable absorber (SA) was fabricated successfully, and a femtosecond solid-state laser modulated by BP-SA was experimentally demonstrated for the first time, to the best of our knowledge. Pulses as short as 272 fs were achieved with an average output power of 0.82 W, corresponding to the pulse energy of 6.48 nJ and peak power of 23.8 MW. So far, these represent the shortest pulse duration and highest output power ever obtained with a BP-based mode-locked solid-state laser. The results indicate the promising potential of few-layered BP-SA for applications in solid-state femtosecond mode-locked lasers.

  6. Graphene Oxide saturable absorber for generating eye-safe Q-switched fiber laser

    NASA Astrophysics Data System (ADS)

    Rosol, A. H. A.; Jusoh, Z.; Rahman, H. A.; Rusdi, M. F. M.; Harun, S. W.; Latiff, A. A.

    2017-06-01

    This paper reports the generation of Q-switched fiber laser using thulium doped fiber (TDF) as a gain medium and graphene oxide (GO) as a saturable absorber (SA). The GO powder is embedded into polyvinyl alcohol (PVA) to form an SA film based on a drop-casting technique. GO-SA film is sandwiched between two fiber connectors and tighten by FC adapter before it is incorporated into an TDF laser cavity for Q-switching pulse generation. At 344 mW pump level, a stable Q-switching regime presence at 1943 nm with a 3-dB spectral bandwidth of 9 nm. The maximum repetition rate, pulse width, and pulse energy are at 25 kHz, 4.2 µs, and 0.68 µJ, respectively. All finding results are comparable with other reported pulse fiber lasers.

  7. Stable optical soliton in the ring-cavity fiber system with carbon nanotube as saturable absorber

    NASA Astrophysics Data System (ADS)

    Li, Bang-Qing; Ma, Yu-Lan; Yang, Tie-Mei

    2018-01-01

    Main attention focuses on the theoretical study of the ring-cavity fiber laser system with carbon nanotubes (CNT) as saturable absorber (SA). The system is modelled as a non-standard Schrödinger equation with the coefficients blended real and imaginary numbers. New stable exact soliton solution is constructed by the bilinear transformation method for the system. The influences of the key parameters related to CNTs and SA on the optical pulse soliton are discussed in simulation. The soliton amplitude and phase can be tuned by choosing suitable parameters.

  8. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    NASA Astrophysics Data System (ADS)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  9. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  10. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    NASA Astrophysics Data System (ADS)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  11. Revealing the nature of morphological changes in carbon nanotube-polymer saturable absorber under high-power laser irradiation.

    PubMed

    Chernysheva, Maria; Araimi, Mohammed Al; Rance, Graham A; Weston, Nicola J; Shi, Baogui; Saied, Sayah; Sullivan, John L; Marsh, Nicholas; Rozhin, Aleksey

    2018-05-10

    Composites of single-walled carbon nanotubes (SWNTs) and water-soluble polymers (WSP) are the focus of significant worldwide research due to a number of applications in biotechnology and photonics, particularly for ultrashort pulse generation. Despite the unique possibility of constructing non-linear optical SWNT-WSP composites with controlled optical properties, their thermal degradation threshold and limit of operational power remain unexplored. In this study, we discover the nature of the SWNT-polyvinyl alcohol (PVA) film thermal degradation and evaluate the modification of the composite properties under continuous high-power ultrashort pulse laser operation. Using high-precision optical microscopy and micro-Raman spectroscopy, we have examined SWNT-PVA films before and after continuous laser radiation exposure (up to 40 hours) with a maximum optical fluence of 2.3 mJ·cm -2 . We demonstrate that high-intensity laser radiation results in measurable changes in the composition and morphology of the SWNT-PVA film due to efficient heat transfer from SWNTs to the polymer matrix. The saturable absorber modification does not affect the laser operational performance. We anticipate our work to be a starting point for more sophisticated research aimed at the enhancement of SWNT-PVA films fabrication for their operation as reliable saturable absorbers in high-power ultrafast lasers.

  12. Passively Q-switched of EDFL employing multi-walled carbon nanotubes with diameter less than 8 nm as saturable absorber

    NASA Astrophysics Data System (ADS)

    Nur Fatin Zuikafly, Siti; Ahmad, Fauzan; Haniff Ibrahim, Mohd; Wadi Harun, Sulaiman

    2017-11-01

    The paper demonstrates passively Q-switched erbium-doped fiber laser implementing multiwalled carbon nanotubes (MWCNTs) based saturable absorber. The paper is the first to report the use of the MWCNTs with diameter less than 8 nm as typically, the diameter used is 10 to 20 nm. The MWCNTs is incorporated with water soluble host polymer, polyvinyl alcohol (PVA) to produce a MWCNTs polymer composite thin film which is then sandwiched between two fiber connectors. The fabricated SA is employed in the laser experimental setup in ring cavity. The Q-switching regime started at threshold pump power of 103 mW and increasable to 215 mW. The stable pulse train from 41.6 kHz to 76.92 kHz with maximum average output power and pulse energy of 0.17 mW and 3.39 nJ are produced. The shortest pulse width of 1.9 μs is obtained in the proposed experimental work, making it the lowest pulse width ever reported using MWCNTs-based saturable absorber.

  13. Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

    NASA Astrophysics Data System (ADS)

    Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

    2018-04-01

    Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

  14. Construction and Passive Q-Switching of a Ring-Cavity Erbium-Doped Fiber Laser Using Carbon Nanotubes as a Saturable Absorber

    NASA Astrophysics Data System (ADS)

    Scott, Austin Murphy

    The purpose of this thesis is to design, build, test, and achieve pulsed operation of a ring-cavity erbium-doped fiber laser using carbon nanotubes as a saturable absorber. The erbium-doped fiber is characterized first, cross-sections are calculated, and the gain value is determined. Subsequently, the ring cavity is constructed and the laser is operated in the continuous wave regime. Much time is then spent trying to characterize and utilize the carbon nanotubes successfully. Many dispersions are made using multiple solvents and dispersing media, various images are taken with both scanning electron and Raman microscopy, and attempts at purification are made. Saturable absorbers are then created both by coating the end facet of a fiber with a dispersion containing carbon nanotubes and by inserting a fabricated poly-methyl-methacrylate (PMMA) and single-walled carbon nanotube (SWCNT) polymer composite film between two fiber end facets. Once inserted into the cavity, the saturable absorbers passively Q-switch the laser in three distinct cases. A fiber end facet coating of SWCNTs dispersed into isopropanol produced pulses with duration of 17.45 +/- 0.11 micros and 2.74 +/- 0.14 micros, with repetition rates of 25.36 +/- 0.53 kHz and 37.77 +/- 0.33 kHz, respectively. A second fiber end facet coating of SWCNTs dispersed into dimethylformamide (DMF) produced pulses with duration of 12.28 +/- 1.08 micros and 3.58 +/- 0.12 micros, with repetition rates of 25.13 +/- 0.63 kHz and 26.46 +/- 0.13 kHz, respectively. The PMMA plus SWCNT polymer composite film produced pulses of 0.716 +/- 0.007 micros duration and 142.8 +/- 1 kHz repetition rate.

  15. Generation of dark solitons in erbium-doped fiber lasers based Sb(2)Te(3) saturable absorbers.

    PubMed

    Liu, Wenjun; Pang, Lihui; Han, Hainian; Tian, Wenlong; Chen, Hao; Lei, Ming; Yan, Peiguang; Wei, Zhiyi

    2015-10-05

    Dark solitons, which have better stability in the presence of noise, have potential applications in optical communication and ultrafast optics. In this paper, the dark soliton formation in erbium-doped fiber lasers based Sb(2)Te(3) saturable absorber (SA) is first experimentally demonstrated. The Sb(2)Te(3) SA is fabricated by using the pulsed laser deposition method. The generated dark solitons are centered at the wavelength of 1530 nm and repetition rate of 94 MHz. Analytic solutions for dark solitons are also obtained theoretically.

  16. Saturable absorber Q- and gain-switched all-Yb3+ all-fiber laser at 976 and 1064 nm.

    PubMed

    Tsai, Tzong-Yow; Fang, Yen-Cheng; Huang, Huai-Min; Tsao, Hong-Xi; Lin, Shih-Ting

    2010-11-08

    We demonstrate a novel passively pulsed all-Yb3+ all-fiber laser pumped by a continuous-wave 915-nm pump laser diode. The laser was saturable absorber Q-switched at 976 nm and gain-switched at 1064 nm, using the method of mode-field-area mismatch. With a pump power of 
105 mW, the laser iteratively produced a 976-nm pulse with an energy of 2.8 μJ and a duration of 280 ns, followed by a 1064-nm pulse with 1.1 μJ and a 430-ns duration at a repetition rate of 9 kHz. A set of rate equations was established to simulate the self-balancing mechanism and the correlation between the Q- and gain-switched photon numbers and the populations of the gain and absorber fibers.

  17. Gold nanorod as saturable absorber for Q-switched Yb-doped fiber laser

    NASA Astrophysics Data System (ADS)

    Wang, Xu-De; Luo, Zhi-Chao; Liu, Hao; Zhao, Nian; Liu, Meng; Zhu, Yan-Fang; Xue, Jian-Ping; Luo, Ai-Ping; Xu, Wen-Cheng

    2015-07-01

    We reported on the generation of Q-switched pulse in an Yb-doped fiber laser by using a filmy polyvinyl alcohol (PVA)-based gold nanorods (GNRs) saturable absorber (SA). The GNRs are synthesized through seed-mediated method whose longitudinal surface plasmon resonance (SPR) absorption peak is located at 1038 nm. The modulation depth of the GNRs SA is ∼4.06%. By gradually increasing the pump power from 62 mW to 128 mW, the repetition rate of Q-switched pulse increases from 8.78 kHz to 20.78 kHz and the pulse duration decreases from 9.43 μs to 3.65 μs. In addition, the dual-wavelength switchable Q-switched operation was also observed. The obtained results further expand the applications of GNRs SA to the field of Q-switched pulsed fiber lasers at 1.0 μm waveband.

  18. Slow light in saturable absorbers: Progress in the resolution of a controversy

    NASA Astrophysics Data System (ADS)

    Macke, Bruno; Razdobreev, Igor; Ségard, Bernard

    2017-06-01

    There are two opposing models in the analysis of the slow transmission of light pulses through saturable absorbers. The canonical incoherent bleaching model simply explains the slow transmission by combined effects of saturation and of noninstantaneous response of the medium resulting in absorption of the front part of the incident pulse larger than that of its rear. The second model, referred to as the coherent-population-oscillations (CPO) model, considers light beams whose intensity is slightly pulse modulated and attributes the time delay of the transmitted pulse to a reduction of the group velocity. We point out some inconsistencies in the CPO model and show that the two models lie in reality on the same hypotheses, the equations derived in the duly rectified CPO model being local expressions of the integral equations obtained in the incoherent bleaching model. When intense pulses without background are used, the CPO model, based on linearized equations, breaks down. The incoherent bleaching model then predicts that the transmitted light should vanish when the intensity of the incident light is strictly zero. This point is confirmed by the experiments that we have performed on ruby with square-wave incident pulses and we show that the whole shape of the observed pulses agrees with that derived analytically by means of the incoherent bleaching model. We also determine in this model the corresponding evolution of the fluorescence light, which seems to have been evidenced in other experiments.

  19. Photo-recovery of electron-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, Andrew

    1995-01-01

    The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

  20. High Power Q-Switched Thulium Doped Fibre Laser using Carbon Nanotube Polymer Composite Saturable Absorber

    PubMed Central

    Chernysheva, Maria; Mou, Chengbo; Arif, Raz; AlAraimi, Mohammed; Rümmeli, Mark; Turitsyn, Sergei; Rozhin, Aleksey

    2016-01-01

    We have proposed and demonstrated a Q-switched Thulium doped fibre laser (TDFL) with a ‘Yin-Yang’ all-fibre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear amplified loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped fibre laser. PMID:27063511

  1. Modulated optical phase conjugation in rhodamine 110 doped boric acid glass saturable absorber thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Ramesh C.; Waigh, Thomas A.; Singh, Jagdish P.

    2008-03-01

    The optical phase conjugation signal in nearly nondegenerate four wave mixing was studied using a rhodamine 110 doped boric acid glass saturable absorber nonlinear medium. We have demonstrated a narrow band optical filter (2.56±0.15Hz) using an optical phase conjugation signal in the frequency modulation of a weak probe beam in the presence of two strong counterpropagating pump beams in rhodamine 110 doped boric acid glass thin films (10-4m). Both the pump beams and the probe beam are at a wavelength of 488nm (continuous-wave Ar+ laser). The probe beam frequency was detuned with a ramp signal using a piezoelectric transducer mirror.

  2. Passively Q-switched 1.6 µm Er:YAG laser with a γ-Ga2O3:Co-based glass-ceramics as a saturable absorber

    NASA Astrophysics Data System (ADS)

    Shi, Yang; Gao, Chunqing; Ye, Qing; Wang, Shuo; Wang, Qing; Gao, Mingwei; Loiko, Pavel; Skoptsov, Nikolai; Dymshits, Olga; Zhilin, Alexander; Zapalova, Svetlana; Tsenter, Marina; Vitkin, Vladimir; Mateos, Xavier; Yumashev, Konstantin

    2018-04-01

    A resonantly pumped passively Q-switched Er:YAG laser operating at 1.617 and 1.645 µm is reported with γ-Ga2O3:Co2+-based glass-ceramics (GCs) as a saturable absorber. The maximum average output power achieved from this laser was 273 mW; the highest pulse energy was 5.9 µJ, corresponding to a pulse duration of 3.0 µs at a repetition frequency of 31 kHz. To the best of our knowledge, this is the first time to use the γ-Ga2O3:Co2+-based GC as a passive Q-switcher for Er:YAG lasers and this is also the first time to obtain 1.617 µm and 1.645 µm pulses with a GC-based saturable absorber.

  3. Enhanced absorption in a reverse saturable absorbing dye blended with carbon nanotubes.

    PubMed

    Webster, Scott; Reyes-Reyes, Marisol; Williams, Richard; Carroll, David L

    2008-12-01

    Using nonlinear absorption at 532 nm in the nanosecond temporal regime, we have measured the low fluence nonlinear transmittance properties of the reverse saturable absorbing carbocyanine dye, 1,1',3,3,3',3'-hexamethylindotricarbocyanine iodide (HITCI), blended with well dispersed carbon nanotubes. The nonlinear optical properties of the blends are strongly dependent on the ratio of dye to nanotubes in solution. In the case where the nanotubes per dye molecule ratio is large, we see a distinctive enhancement in optical fluence limiting properties of the system, suggesting enhanced absorption of the excited states. However, when the nanotube to dye ratio decreases, the system's response is dominated by the behavior of the dye. We suggest that this can be understood as a two component system in which sensitized dye molecules associated with the nanotubes have an effectively different optical cross-section from the dye molecules far from the nanotubes. From classical antennae considerations, this is expected.

  4. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhou, Yan; Li, Yue; Xu, Jianqiu

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operationmore » of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.« less

  5. Au nanocage/SiO2 saturable absorber for passive Q-switching Yb-doped fiber laser

    NASA Astrophysics Data System (ADS)

    Bai, Jinxi; Li, Ping; Guo, Lei; Zhang, Baitao; Hu, Qiongyu; Wang, Lili; Liu, Binghai; Chen, Xiaohan

    2018-05-01

    Au nanocages/SiO2 (Au-NCs/SiO2) with the surface plasmon resonance peak at 1060 nm were fabricated and experimentally exploited as the saturable absorber in an all-fiber passively Q-switched ytterbium-doped fiber laser for the first time. Under a pump power of 440 mW, the average output power of 10.6 mW was obtained with the pulse duration 1.4 µs and the repetition rate of 126.9 kHz at 1060.5 nm with the 3 dB spectral width of 0.131 nm. The results indicate that Au-NCs/SiO2 exhibits the potential for applications in the field of pulse lasers.

  6. Passively Q-switched Tm-doped fiber laser based on concave gold bipyramids assembled quasi-2D saturable absorber

    NASA Astrophysics Data System (ADS)

    Song, Jiaxin; Wu, Hanshuo; Wu, Jian; Xu, Jiangming; Xiao, Hu; Leng, Jinyong; Zhou, Pu; Liu, Zejin

    2018-07-01

    We demonstrated a concave gold bipyramids (CAuBPs) quasi-2D saturable absorbers (SAs) based ~2 μm band fiber laser for the first time. CAuBPs were synthesized by using modified aqueous wet-chemical synthesis method. Through controlling the size and morphology of CAuBPs, the longitudinal surface plasmon resonance peak of CAuBPs based quasi-2D SA is tuned to be ~2 μm. Passively Q-switched lasing of thulium-doped fiber laser is achieved successfully with a maximum average output power of 9.72 mW and ~9% slope efficiency. The minimum pulse width is 4.56 µs at the repetition rate of 20 kHz. Experimental results reveals that CAuBPs could be used as SAs in the 2 µm region, which verifies the saturable absorption properties of CAuBPs.

  7. Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

    PubMed

    Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

    2017-01-24

    Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

  8. Passive Q-switching of a Tm:YLF laser with a Co2+ doped silver halide saturable absorber

    NASA Astrophysics Data System (ADS)

    Hecht, Harel; Burshtein, Zeev; Katzir, Abraham; Noach, Salman; Sokol, Maxim; Frumker, Eugene; Galun, Ehud; Ishaaya, Amiel A.

    2017-02-01

    We report a successful passive Q-switching of a Tm:YLF laser operating at λ = 1.9 μm, using a Co2+:AgCl0.5Br0.5 saturable absorber. Approximately 200-ns long, 150 μJ pulses were obtained. Increase in pump energy resulted in repetitive pulsing, with a repetition rate approximately proportional to the pump pulse energy. Room-temperature optical transmission saturation curves measured in ∼1-mm thick Co2+:AgCl0.5Br0.5 plates yielded a ground state absorption cross section σgs =(7.8 ± 0.5) ×10-18 cm2 , and an excited state absorption cross section σes =(3.3 ± 0.3) ×10-18 cm2 , at λ = 1.9 μm. The lifetime of the A2(4F) second excited-state of the octahedral O symmetry was τ∗ =(0.6 ± 0.06) ns .

  9. WS₂ as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers.

    PubMed

    Wu, Kan; Zhang, Xiaoyan; Wang, Jun; Li, Xing; Chen, Jianping

    2015-05-04

    Two-dimensional (2D) nanomaterials, especially the transition metal sulfide semiconductors, have drawn great interests due to their potential applications in viable photonic and optoelectronic devices. In this work, 2D tungsten disulfide (WS2) based saturable absorber (SA) for ultrafast photonic applications was demonstrated. WS2 nanosheets were prepared using liquid-phase exfoliation method and embedded in polyvinyl alcohol (PVA) thin film for the practical usage. Saturable absorption was discovered in the WS2-PVA SA at the telecommunication wavelength near 1550 nm. By incorporating WS2-PVA SA into a fiber laser cavity, both stable mode locking operation and Q-switching operation were achieved. In the mode locking operation, the laser obtained femtosecond output pulse width and high spectral purity in the radio frequency spectrum. In the Q-switching operation, the laser had tunable repetition rate and output pulse energy of a few tens of nano joule. Our findings suggest that few-layer WS2 nanosheets embedded in PVA thin film are promising nonlinear optical materials for ultrafast photonic applications as a mode locker or Q-switcher.

  10. Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber.

    PubMed

    Serres, J M; Loiko, P; Mateos, X; Jambunathan, V; Yasukevich, A S; Yumashev, K V; Petrov, V; Griebner, U; Aguiló, M; Díaz, F

    2016-05-10

    A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14  ns/9  μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9  ns/10.4  μJ/8.2  kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.

  11. Image quality of a pixellated GaAs X-ray detector

    NASA Astrophysics Data System (ADS)

    Sun, G. C.; Makham, S.; Bourgoin, J. C.; Mauger, A.

    2007-02-01

    X-ray detection requires materials with large atomic numbers Z in order to absorb the radiation efficiently. In case of X-ray imaging, fluorescence is a limiting factor for the spatial resolution and contrast at energies above the kα threshold. Since both the energy and yield of the fluorescence of a given material increase with the atomic number, there is an optimum value of Z. GaAs, which can now be epitaxially grown as self-supported thick layers to fulfil the requirements for imaging (good homogeneity of the electronic properties) corresponds to this optimum. Image performances obtained with this material are evaluated in terms of line spread function and modulation transfer function, and a comparison with CsI is made. We evaluate the image contrast obtained for a given object contrast with GaAs and CsI detectors, in the photon energy range of medical applications. Finally, we discuss the minimum object size, which can be detected by these detectors in of mammography conditions. This demonstrates that an object of a given size can be detected using a GaAs detector with a dose at least 100 times lower than using a CsI detector.

  12. Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chavanapranee, Tosaporn; Horikoshi, Yoshiji

    The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

  13. One-way quasiplanar terahertz absorbers using nonstructured polar dielectric layers

    NASA Astrophysics Data System (ADS)

    Rodríguez-Ulibarri, P.; Beruete, M.; Serebryannikov, A. E.

    2017-10-01

    A concept of quasiplanar one-way transparent terahertz absorbers made of linear isotropic materials is presented. The resulting structure consists of a homogeneous absorbing layer of polar dielectric, GaAs, a dispersion-free substrate, and an ultrathin frequency-selective reflector. It is demonstrated that perfect absorption can be obtained for forward illumination, along with total reflection at backward illumination and transparency windows in the adjacent bands. The design is particularized for the polaritonic gap range where permittivity of GaAs varies in a wide range and includes epsilon-near-zero and transparency regimes. The underlying physics can be explained with the aid of a unified equivalent-circuit (EC) analytical model. Perfect matching of input impedance in forward operation and, simultaneously, strong mismatch in the backward case are the universal criteria of one-way absorption. It is shown that perfect one-way absorption can be achieved at rather arbitrary permittivity values, provided these criteria are fulfilled. The EC results are in good agreement with full-wave simulations in a wide range of material and geometrical parameters. The resulting one-way absorbers are very compact and geometrically simple, and enable transparency in the neighboring frequency ranges and, hence, multifunctionality that utilizes both absorption- and transmission-related regimes.

  14. High energy Er-doped Q-switched fiber laser with WS2 saturable absorber

    NASA Astrophysics Data System (ADS)

    Li, Lu; Wang, Yonggang; Wang, Zhen Fu; Wang, Xi; Yang, Guowen

    2018-01-01

    The report presents a stable Q-switched Er-doped fiber (EDF) laser with WS2-based saturable absorber (SA). The SA is obtained by mixing WS2 dispersion with polyvinyl alcohol (PVA) into polystyrene cells, and then evaporating them to form WS2/PVA film. The modulation depth (MD) of WS2/PVA is 2% and the saturable intensity (Isat) is 27.2 MW/cm2. Employing the WS2/PVA film into EDF laser cavity, stable Q-switched operation is achieved with central wavelength of 1560 nm. The repetition rate can be tuned from 16.15 to 60.88 kHz with increasing pump power from 30 to 320 mW. The single pulse energy increases from 82 to 195 nJ and then decreases down to 156 nJ with increasing pump power from 30 to 320 mW. The pulse width shows the same variation trend. The shortest pulse duration of 2.396 μs and the maximum single pulse energy of 195 nJ are obtained at the pump power of 220 mW. To the best of our knowledge, 195 nJ is the largest single pulse energy at 1.55 μm region with TMDs as Q-switcher. The signal-to-noise ratio (SNR) is measured to be 60 dB at the pump power of 130 mW. The long term stability of working is good too. The experimental results evidently show that the WS2/PVA SA can work as a promising Q-switcher for high power fiber lasers.

  15. Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber.

    PubMed

    Huang, Yizhong; Luo, Zhengqian; Li, Yingyue; Zhong, Min; Xu, Bin; Che, Kaijun; Xu, Huiying; Cai, Zhiping; Peng, Jian; Weng, Jian

    2014-10-20

    We propose and demonstrate a MoS2-based passively Q-switched Er-doped fiber laser with a wide tuning range of 1519.6-1567.7 nm. The few-layer MoS2 nano-platelets are prepared by the liquid-phase exfoliation method, and are then made into polymer-composite film to construct the fiber-compatible MoS2 saturable absorber (SA). It is measured at 1560 nm wavelength, that such MoS2 SA has the modulation depth of ∼ 2% and the saturable optical intensity of ∼ 10 MW/cm(2). By further inserting the filmy MoS2-SA into an Er-doped fiber laser, stable Q-switching operation with a 48.1 nm continuous tuning from S- to C-waveband is successfully achieved. The shortest pulse duration and the maximum pulse energy are 3.3 μs and 160 nJ, respectively. The repetition rate and the pulse duration under different operation conditions have been also characterized. To the best of our knowledge, it is the first demonstration of MoS2 Q-switched, widely-tunable fiber laser.

  16. Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

    NASA Technical Reports Server (NTRS)

    Von Roos, O.; Mavromatis, H.

    1984-01-01

    The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

  17. Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD

    NASA Astrophysics Data System (ADS)

    Colas, Etienne G.; Aspnes, David E.; Bhat, Rajaram J.; Studna, A. A.; Koza, M. A.; Keramidas, Vassilis G.

    1990-02-01

    This paper summarizes results of our investigations of growth on (001) and (110) GaAs by atmospheric-pressure organometallic chemical vapor deposition (OMCVD). We follow evolutions of surface species to a sensitivity of 0.01 monolayer (ML) on a time scale of 0.1 s under alternating flows of trimethylgallium (TMG) and arsine (AsH3) as functions of partial pressure, sample temperature, and surface orienta-tion. The reaction of TMG with an AsH3-saturated (001) surface is rate-limited by com-petition between desorption and decomposition of TMG molecules chemisorbed to surface lattice sites via an excluded-volume mechanism, while the reaction of AsH3 with the TMG-saturated (001) surface is essentially instantaneous. In contrast, TMG reacts essentially instantaneously with the AsH3 -saturated (110) surface while the AsH3 reaction with the TMG-saturated (110) surface is the rate-limiting step. However, the latter rate is not intrinsic to the AsH3-surface reaction but appears to be determined by desorption of adsorbed species that block active sites.

  18. Au nanocages/SiO2 as saturable absorbers for passively Q-switched all-solid-state laser

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Chen, Xiaohan; Bai, Jinxi; Liu, Binghai; Hu, Qiongyu; Li, Ping

    2018-04-01

    Based on Au nanocages/SiO2 (Au-NCs/SiO2) as saturable absorber (SA), passively Q-switched Nd:YVO4 lasers with the output couplers (OCs) with the transmittance (T) of 4% and 10.8% were demonstrated, respectively. Q-switched pulse with the shortest pulse duration of 154.2 ns was achieved at T = 4% under the pump power of 2.11 W with the corresponding repetition rate of 280.0 kHz and average output power of 140.6 mW. While the maximum average output power of 150.2 mW was obtained at T = 10.8% under the pump power of 2.42 W, corresponding to the pulse width and repetition rate of 222.0 ns and 279.1 kHz.

  19. Investigation of the laser pumping power impact on the operating regimes of a laser passively Q-switched by a saturated absorber

    NASA Astrophysics Data System (ADS)

    Benarab, Mustapha; Mokdad, Rabah; Djellout, Hocine; Benfdila, Arezki; Lamrous, Omar; Meyrueis, Patrick

    2011-09-01

    We have adapted the point model for the study of an all-fiber laser doped with Nd3+ and Q-switched by a saturable fiber absorber doped with Cr4+. Calculations of the output power of the 1084 nm laser are considered as a function of the pump power supplied by a 790 nm laser diode. The analysis of the simulation results reveals the existence of pulsed, sinusoidal, and dc operating regimes.

  20. All-fibre Q-switching YDFL operation with bismuth-doped fibre as saturable absorber

    NASA Astrophysics Data System (ADS)

    Muhammad, A. R.; Haris, H.; Arof, H.; Tan, S. J.; Ahmad, M. T.; Harun, S. W.

    2018-05-01

    We demonstrate the generation of a passively Q-switched ytterbium-doped fibre laser (YDFL) using a bismuth-doped fibre (BDF) as a solid-state fibre saturable absorber (FSA) in a ring cavity. The BDF used has a wide and low absorption band of 5 dB/m at the 1.0 μm region due to the ion transition of ? that occurs around the region. When introduced into a YDFL laser cavity, a stable Q-switched pulse operation was observed and the pulse repetition rate was proportional to the input pump power. It was limited to 72.99 kHz by the maximum power that the laser diode could supply. Meanwhile, the pulse width decreased from 12.22 to 4.85 μs as the pump power was increased from 215.6 to 475.6 mW. The finding suggests that BDF could be used as a potential SA for the development of robust, compact, efficient and low cost Q-switched fibre lasers operating at 1 micron region.

  1. Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber

    NASA Astrophysics Data System (ADS)

    Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi

    2018-01-01

    Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

  2. Single-wall carbon nanotubes and graphene oxide-based saturable absorbers for low phase noise mode-locked fiber lasers

    PubMed Central

    Li, Xiaohui; Wu, Kan; Sun, Zhipei; Meng, Bo; Wang, Yonggang; Wang, Yishan; Yu, Xuechao; Yu, Xia; Zhang, Ying; Shum, Perry Ping; Wang, Qi Jie

    2016-01-01

    Low phase noise mode-locked fiber laser finds important applications in telecommunication, ultrafast sciences, material science, and biology, etc. In this paper, two types of carbon nano-materials, i.e. single-wall carbon nanotube (SWNT) and graphene oxide (GO), are investigated as efficient saturable absorbers (SAs) to achieve low phase noise mode-locked fiber lasers. Various properties of these wall-paper SAs, such as saturable intensity, optical absorption and degree of purity, are found to be key factors determining the performance of the ultrafast pulses. Reduced-noise femtosecond fiber lasers based on such carbon-based SAs are experimentally demonstrated, for which the phase noise has been reduced by more than 10 dB for SWNT SAs and 8 dB for GO SAs at 10 kHz. To the best of our knowledge, this is the first investigation on the relationship between different carbon material based SAs and the phase noise of mode-locked lasers. This work paves the way to generate high-quality low phase noise ultrashort pulses in passively mode-locked fiber lasers. PMID:27126900

  3. Self-stabilizing optical clock pulse-train generator using SOA and saturable absorber for asynchronous optical packet processing.

    PubMed

    Nakahara, Tatsushi; Takahashi, Ryo

    2013-05-06

    We propose a novel, self-stabilizing optical clock pulse-train generator for processing preamble-free, asynchronous optical packets with variable lengths. The generator is based on an optical loop that includes a semiconductor optical amplifier (SOA) and a high-extinction spin-polarized saturable absorber (SA), with the loop being self-stabilized by balancing out the gain and absorption provided by the SOA and SA, respectively. The optical pulse train is generated by tapping out a small portion of a circulating seed pulse. The convergence of the generated pulse energy is enabled by the loop round-trip gain function that has a negative slope due to gain saturation in the SOA. The amplified spontaneous emission (ASE) of the SOA is effectively suppressed by the SA, and a backward optical pulse launched into the SOA enables overcoming the carrier-recovery speed mismatch between the SOA and SA. Without external control for the loop gain, a stable optical pulse train consisting of more than 50 pulses with low jitter is generated from a single 10-ps seed optical pulse even with a variation of 10 dB in the seed pulse intensity.

  4. Microprocessor design for GaAs technology

    NASA Astrophysics Data System (ADS)

    Milutinovic, Veljko M.

    Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

  5. Passively Q-switched wavelength-tunable 1-μm fiber lasers with tapered-fiber-based black phosphorus saturable absorbers

    NASA Astrophysics Data System (ADS)

    Song, Huaqing; Wang, Qi; Wang, Dongdong; Li, Li

    2018-03-01

    In this paper, we demonstrated passively Q-switched wavelength-tunable 1-μm fiber lasers utilizing few-layer black phosphorus saturable absorbers. The few-layer BP was deposited onto the tapered fibers by an optically driven process. The wavelength tunability was achieved with a fiber Sagnac loop comprised of a piece of polarization maintaining fiber and a polarization controller. Stable Q-switching laser operations were observed at wavelengths ranging from 1040.5 to 1044.6 nm at threshold pump power of 220 mW. Maximal pulse energy of 141.27 nJ at a repetition rate of 63 kHz was recorded under pump power of 445 mW.

  6. Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Eshghi, M. J.; Majdabadi, A.; Koohian, A.

    2017-01-01

    In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

  7. Homojunction GaAs solar cells grown by close space vapor transport

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.

    2014-06-08

    We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping,more » and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.« less

  8. Passively Q-switched and mode-locked dual-wavelength Nd:GGG laser with Cr4+:YAG as a saturable absorber

    NASA Astrophysics Data System (ADS)

    Chu, Hongwei; Zhao, Shengzhi; Li, Yufei; Yang, Kejian; Li, Guiqiu; Li, Dechun; Zhao, Jia; Qiao, Wenchao; Li, Tao; Feng, Chuansheng; Zhang, Haijuan

    2014-03-01

    By using neodymium-doped gadolinium gallium garnet (Nd:GGG) as a laser medium, a simultaneously passively Q-switched and mode-locked (QML) dual-wavelength laser with Cr4+:YAG as a saturable absorber is presented. The laser simultaneously oscillated at 1061 nm and 1063 nm, corresponding to a frequency difference of 0.53 THz. QML pulses with nearly 100% modulation depth were observed. The mode-locked pulse duration underneath the Q-switched envelope was estimated to be about 908 ps. The experimental results indicated that the dual-wavelength QML Nd:GGG laser can be an excellent candidate for the generation of THz waves.

  9. GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

    NASA Astrophysics Data System (ADS)

    Maradan, D.; Casparis, L.; Liu, T.-M.; Biesinger, D. E. F.; Scheller, C. P.; Zumbühl, D. M.; Zimmerman, J. D.; Gossard, A. C.

    2014-06-01

    We present measurements of the electron temperature using gate-defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.

  10. Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

    DTIC Science & Technology

    1992-12-01

    AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

  11. Dispersive bi-stability in a vertical microcavity-based saturable absorber due to photo-thermal effect and initial phase-detuning

    NASA Astrophysics Data System (ADS)

    Pradhan, R.; Saha, S.; Datta, P. K.

    2013-01-01

    Round-trip phase-shifts with intensity of an input signal due to saturable index change and optically induced thermal effects in a vertical cavity semiconductor (quantum wells) saturable absorber (VCSSA) are investigated analytically to observe counter-clockwise bi-stability in transmission mode and clockwise bi-stability in reflection mode. Simultaneous effects of Kerr nonlinearity and cavity heating on resonance wavelength-shift of the VCSSA micro-cavity are investigated. It is found that these bi-stable characteristics are possible to the absorption edge of nonlinear material for long wavelength side operations of low intensity resonance wavelength of the micro-cavity, where dispersion of absorption and refraction are neglected over a small range of optical wavelength tuning (δλ˜10 nm). Simulations are carried out to find out optimized parameters of the device for bi-stable characteristics. Operations are demonstrated for InGaAs/InP quantum wells based VCSSA with low intensity resonance wavelength of 1570 nm. For counter-clockwise bi-stable switching at working wavelength of 1581 nm, an input intensity variation of 0.79IS is required with top (Rt) and back DBR reflectivity (Rb) of 91% and 93%, respectively, where IS represents the absorption saturation intensity of nonlinear medium. Whereas, the clockwise bi-stability occurs at 0.22IS for working wavelength of 1578 nm with Rt of 90% and Rb of 98%, respectively.

  12. GaAs Computer Technology

    DTIC Science & Technology

    1992-01-07

    AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

  13. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    PubMed

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  14. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  15. High power passive mode-locked L-band fiber laser based on microfiber topological insulator saturable absorber

    NASA Astrophysics Data System (ADS)

    Semaan, Georges; Meng, Yichang; Salhi, Mohamed; Niang, Alioune; Guesmi, Khmaies; Luo, Zhi-Chao; Sanchez, Francois

    2016-04-01

    In this communication, we demonstrate a passive mode-locked Er:Yb co-doped double-clad fiber laser using a tapered microfiber topological insulator (Bi2Se3) saturable absorber (TISA). The topological insulator is drop-casted onto the tapered fiber and optically deposited by optical tweezer effect. We use a ring laser setup including the fabricated TISA. By carefully optimizing the cavity losses and output coupling ratio, the mode-locked laser can operate in L-band with a high average output power. At a maximum pump power of 5 W, we obtain the 91st harmonic mode-locking of soliton bunches with a 3dB spectral bandwidth of 1.06nm, a repetition rate of 640.9 MHz and an average output power of 308mW. As far as we know, this is the highest output power yet reported of a mode-locked fiber laser operating with a TISA.

  16. Photodetector with absorbing region having resonant periodic absorption between reflectors

    DOEpatents

    Bryan, R.P.; Olbright, G.R.; Brennan, T.M.; Tsao, J.Y.

    1995-02-14

    A photodetector is disclosed that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer. 11 figs.

  17. Photodetector with absorbing region having resonant periodic absorption between reflectors

    DOEpatents

    Bryan, Robert P.; Olbright, Gregory R.; Brennan, Thomas M.; Tsao, Jeffrey Y.

    1995-02-14

    A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.

  18. Density measurement in air with a saturable absorbing seed gas

    NASA Technical Reports Server (NTRS)

    Baganoff, D.

    1981-01-01

    Resonantly enhanced scattering from the iodine molecule is studied experimentally for the purpose of developing a scheme for the measurement of density in a gas dynamic flow. A study of the spectrum of iodine, the collection of saturation data in iodine, and the development of a mathematical model for correlating saturation effects were pursued for a mixture of 0.3 torr iodine in nitrogen and for mixture pressures up to one atmosphere. For the desired pressure range, saturation effects in iodine were found to be too small to be useful in allowing density measurements to be made. The effects of quenching can be reduced by detuning the exciting laser wavelength from the absorption line center of the iodine line used (resonant Raman scattering). The signal was found to be nearly independent of pressure, for pressures up to one atmosphere, when the excitation beam was detuned 6 GHz from line center for an isolated line in iodine. The signal amplitude was found to be nearly equal to the amplitude for fluorescence at atmospheric pressure, which indicates a density measurement scheme is possible.

  19. Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

    NASA Astrophysics Data System (ADS)

    Ouyang, Chunmei; Wang, Honghai; Shum, Ping; Fu, Songnian; Wong, Jia Haur; Wu, Kan; Lim, Desmond Rodney Chin Siong; Wong, Vincent Kwok Huei; Lee, Kenneth Eng Kian

    2011-01-01

    We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.

  20. Density measurement in air with saturable absorbing seed gas

    NASA Technical Reports Server (NTRS)

    Baganoff, D.

    1982-01-01

    Approaches which have the potential to make density measurements in a compressible flow, where one or more laser beams are used as probes, were investigated. Saturation in sulfur hexafluoride iodine and a crossed beam technique where one beam acts as a saturating beam and the other is at low intensity and acts as a probe beam are considered. It is shown that a balance between an increase in fluorescence intensity with increasing pressure from line broadening and the normal decrease in intensity with increasing pressure from quenching can be used to develop a linear relation between fluorescence intensity and number density and lead to a new density measurement scheme. The method is used to obtain a density image of the cross section of an iodine seeded underexpanded supersonic jet of nitrogen, by illuminating the cross section by a sheet of laser light.

  1. Graphene oxide based reflective saturable absorber for Q-switched and mode-locked YVO4/Nd:YVO4/YVO4 laser

    NASA Astrophysics Data System (ADS)

    Zhang, Gang; Wang, Yonggang; Chen, Zhendong; Jiao, Zhiyong

    2018-05-01

    A reflective graphene oxide saturable absorber is fabricated and used in a Q-switched and mode-locked YVO4/Nd:YVO4/YVO4 laser. Stable Q-switched and mode-locked pulses with a repetition rate of 8 MHz can be obtained at a pump power of 9 W by using an X-type resonator. Pulses obtained in an X-type resonator possess higher stability, output power, and repetition rate, compared with those in a Z-type resonator. The pulse width and the repetition rate of the Q-switched envelop in an X-type resonator are superior to those in the reported Q-switched and mode-locked lasers with graphene oxide.

  2. Black phosphorus as a saturable absorber for generating mode-locked fiber laser in normal dispersion regime

    NASA Astrophysics Data System (ADS)

    Latiff, A. A.; Rusdi, M. F. M.; Hisyam, M. B.; Ahmad, H.; Harun, S. W.

    2016-11-01

    This paper reports a few-layer black phosphorus (BP) as a saturable absorber (SA) or phase-locker in generating modelocked pulses from a double-clad ytterbium-doped fiber laser (YDFL). We mechanically exfoliated the BP flakes from BP crystal through a scotch tape, and repeatedly press until the flakes thin and spread homogenously. Then, a piece of BP tape was inserted in the cavity between two fiber connectors end facet. Under 810 mW to 1320 mW pump power, stable mode-locked operation at 1085 nm with a repetition rate of 13.4 MHz is successfully achieved in normal dispersion regime. Before mode-locked operation disappears above maximum pump, the output power and pulse energy is about 80 mW and 6 nJ, respectively. This mode-locked laser produces peak power of 0.74 kW. Our work may validates BP SA as a phase-locker related to two-dimensional nanomaterials and pulsed generation in normal dispersion regime.

  3. Passive Q-switching of ˜2.7 µm Er:Lu2O3 ceramic laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Ren, Xiaojing; Shen, Deyuan; Zhang, Jian; Tang, Dingyuan

    2018-02-01

    We demonstrate the passively Q-switched operation of an Er:Lu2O3 ceramic laser at ˜2.7 µm for the first time, to the best of our knowledge. By using a semiconductor saturable absorber mirror (SESAM), stable pulse trains with a repetition rate of 20-33.3 kHz are produced in a compacted v-shaped resonator. The pulse duration (FWHM), pulse energy, and peak power are 660 ns, 1.8 µJ, and ˜2.73 W, respectively, at 33.3 kHz repetition rate. Prospects for further improvements in terms of laser performances are discussed.

  4. Silicon incorporation in GaAs: From delta-doping to monolayer insertion

    NASA Astrophysics Data System (ADS)

    Wagner, J.; Newman, R. C.; Roberts, C.

    1995-08-01

    Raman spectroscopy was used to study the incorporation of Si into doping layers in GaAs, grown by molecular beam epitaxy at a temperature of 400 °C, for Si concentrations ranging from the δ-doping level to a ML coverage. The strength of the scattering by local vibrational modes of substitutional Si was almost constant for Si areal concentration [Si]A in the range 5×1012<[Si]A<5×1013 cm-2 but then decreased, dropping below the detection limit for [Si]A≳3×1014 cm-2. At these concentrations a new vibrational band emerged at a frequency close to 470 cm-1 and developed into the optic zone center phonon of a coherently strained epitaxial layer of Si embedded in GaAs when a coverage of ≊1.5 ML (9.3×1014 cm-2) was reached. These findings strongly indicate that the observed saturation and the eventual decrease of the concentration of substitutional silicon is caused by an increasing incorporation of deposited Si into two-dimensional islands of covalently bonded Si.

  5. GaAs MOEMS Technology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

  6. Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons

    NASA Astrophysics Data System (ADS)

    Šagátová, A.; Zaťko, B.; Nečas, V.; Sedlačková, K.; Boháček, P.; Fülöp, M.; Pavlovič, M.

    2018-01-01

    A radiation hardness study of Semi-Insulating (SI) GaAs detectors against 5 MeV electrons is described in this paper. The influence of two parameters, the accumulative absorbed dose (from 1 to 200 kGy) and the applied dose rate (20, 40 or 80 kGy/h), on detector spectrometric properties were studied. The accumulative dose has influenced all evaluated spectrometric properties and also negatively affected the detector CCE (Charge Collection Efficiency). We have observed its systematic reduction from an initial 79% before irradiation down to about 51% at maximum dose of 200 kGy. Relative energy resolution was also influenced by electron irradiation. Its degradation was obvious in the range of doses from 24 up to a maximum dose of 200 kGy, where an increase from 19% up to 31% at 200 V reverse voltage was noticed. On the other hand, a global increase of detection efficiency with accumulative absorbed dose was observed for all samples. Concerning the actual detector degradation we can assume that the tested SI GaAs detectors will be able to operate up to a dose of 300 kGy at least, when irradiated by 5 MeV electrons. The second investigated parameter of irradiation, the dose rate of chosen ranges, did not greatly alter the spectrometric properties of studied detectors.

  7. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  8. Evaluation of a commercially available passively Q-switched Nd:YAG laser with LiF: F2- saturable absorber for laser-induced breakdown spectroscopy

    NASA Astrophysics Data System (ADS)

    Carson, Cantwell G.; Goueguel, Christian L.; Sanghapi, Hervé; Jain, Jinesh; McIntyre, Dustin

    2016-05-01

    Interest in passively Q-switched microchip lasers as a means for miniaturization of laser-induced breakdown spectroscopy (LIBS) apparatus has rapidly grown in the last years. To explore the possibility of using a comparatively UV-vis transparent absorber, we herein present the first report on the evaluation of a commercially available flash lamp-pumped passively Q-switched Nd:YAG laser with LiF: F2- saturable absorber as an excitation source in LIBS. Quantitative measurements of barium, strontium, rubidium and lithium in granite, rhyolite, basalt and syenite whole-rock glass samples were performed. Using a gated intensified benchtop spectrometer, limits of detection of 0.97, 23, 37, and 144 ppm were obtained for Li, Sr, Rb, and Ba, respectively. Finally, we discuss the advantages of using such a laser unit for LIBS applications in terms of ablation efficiency, analytical performances, output energy, and standoff capabilities.

  9. All-fiber mode-locked laser oscillator with pulse energy of 34 nJ using a single-walled carbon nanotube saturable absorber.

    PubMed

    Jeong, Hwanseong; Choi, Sun Young; Rotermund, Fabian; Cha, Yong-Ho; Jeong, Do-Young; Yeom, Dong-Il

    2014-09-22

    We demonstrate a dissipative soliton fiber laser with high pulse energy (>30 nJ) based on a single-walled carbon nanotube saturable absorber (SWCNT-SA). In-line SA that evanescently interacts with the high quality SWCNT/polymer composite film was fabricated under optimized conditions, increasing the damage threshold of the saturation fluence of the SA to 97 mJ/cm(2). An Er-doped mode-locked all-fiber laser operating at net normal intra-cavity dispersion was built including the fabricated in-line SA. The laser stably delivers linearly chirped pulses with a pulse duration of 12.7 ps, and exhibits a spectral bandwidth of 12.1 nm at the central wavelength of 1563 nm. Average power of the laser output is measured as 335 mW at an applied pump power of 1.27 W. The corresponding pulse energy is estimated to be 34 nJ at the fundamental repetition rate of 9.80 MHz; this is the highest value, to our knowledge, reported in all-fiber Er-doped mode-locked laser using an SWCNT-SA.

  10. Design optimization of GaAs betavoltaic batteries

    NASA Astrophysics Data System (ADS)

    Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

    2011-06-01

    GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

  11. MoTe2 saturable absorber for passively Q-switched Ho,Pr:LiLuF4 laser at ∼3 μm

    NASA Astrophysics Data System (ADS)

    Yan, Zhengyu; Li, Tao; Zhao, Shengzhi; Yang, Kejian; Li, Dechun; Li, Guiqiu; Zhang, Shuaiyi; Gao, Zijing

    2018-03-01

    Multilayer molybdenum ditelluride (MoTe2) nanosheets were prepared by liquid-phase exfoliation (LPE) method. A YAG-based MoTe2 saturable absorption (SA) was consequently fabricated. The MoTe2-SA was employed in a passively Q-switched Ho,Pr:LiLuF4 laser at 2.95 μm. Under the absorbed pump power of 3.8 W, an average output power of 90 mW was achieved. The shortest pulse duration of 670 ns was generated with an output power of 73 mW and a repetition rate of 76.46 kHz, corresponding to a pulse energy of 0.95 μJ.

  12. Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a graphene-based saturable absorber

    NASA Astrophysics Data System (ADS)

    Serres, J. M.; Loiko, P.; Mateos, X.; Jambunathan, V.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguiló, M.; Díaz, F.

    2016-02-01

    The first Ho microchip laser passively Q-switched using a graphene-based saturable absorber is demonstrated based on a Tm,Ho:KLu(WO4)2 crystal cut along the N g-axis. A maximum average output power of 74 mW is extracted from the diode-pumped laser at 2061 nm with a slope efficiency of 4%. Pulses as short as 200 ns with an energy of ~0.2 μJ are obtained at a repetition rate of 340 kHz. The energy transfer (ET), 3F4 (Tm3+) ↔ 5I7 (Ho3+) is studied, yielding ET parameters of P 28  =  1.69 and P 71  =  0.15  ×  10-22 cm3 μs-1, revealing the strong prevalence of direct ET.

  13. GaAs Monolithic Microwave Subsystem Technology Base

    DTIC Science & Technology

    1980-01-01

    To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

  14. Tunable passively Q-switched erbium-doped fiber laser with Chitosan/MoS2 saturable absorber

    NASA Astrophysics Data System (ADS)

    Ahmad, H.; Aidit, S. N.; Ooi, S. I.; Tiu, Z. C.

    2018-07-01

    Chitosan, an organic polymer derived from the outer skeletons of crustacean and in the cell wall of fungi is explored as polymer host to develop thin film saturable absorber (SA). As a polymer, Chitosan shows high thermal stability as well as significant transmission characteristics. The highly transparent polymer serves as a good host for SA materials, and a composite Chitosan/MoS2 thin film is demonstrated to successfully generate stable Q-switched lasing output at operating wavelength of 1561.5 nm. At maximum pump power of 280.5 mW, the generated pulse exhibits maximum pulse repetition rate and pulse energy of 79.4 kHz and 43.69 nJ respectively as well as minimum pulse width of 1.02 μs. The overall efficiency of the laser cavity with the Chitosan/MoS2 thin film SA is approximately 0.93%. These results reflect the outstanding performance of Chitosan/MoS2 SA as compared to other MoS2 SA prepared using mechanical exfoliation and optical deposition technique. Moreover, the Chitosan polymer is shown to be a highly potential host in the SA fabrication process due to its promising performance which is comparable to PVA.

  15. 300-MHz-repetition-rate, all-fiber, femtosecond laser mode-locked by planar lightwave circuit-based saturable absorber.

    PubMed

    Kim, Chur; Kim, Dohyun; Cheong, YeonJoon; Kwon, Dohyeon; Choi, Sun Young; Jeong, Hwanseong; Cha, Sang Jun; Lee, Jeong-Woo; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon

    2015-10-05

    We show the implementation of fiber-pigtailed, evanescent-field-interacting, single-walled carbon nanotube (CNT)-based saturable absorbers (SAs) using standard planar lightwave circuit (PLC) fabrication processes. The implemented PLC-CNT-SA device is employed to realize self-starting, high-repetition-rate, all-fiber ring oscillators at telecommunication wavelength. We demonstrate all-fiber Er ring lasers operating at 303-MHz (soliton regime) and 274-MHz (stretched-pulse regime) repetition-rates. The 303-MHz (274-MHz) laser centered at 1555 nm (1550 nm) provides 7.5 nm (19 nm) spectral bandwidth. After extra-cavity amplilfication, the amplified pulse train of the 303-MHz (274-MHz) laser delivers 209 fs (178 fs) pulses. To our knowledge, this corresponds to the highest repetition-rates achieved for femtosecond lasers employing evanescent-field-interacting SAs. The demonstrated SA fabrication method, which is based on well-established PLC processes, also shows a potential way for mass-producible and lower-cost waveguide-type SA devices suitable for all-fiber and waveguide lasers.

  16. A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser.

    PubMed

    Feng, Tianxian; Mao, Dong; Cui, Xiaoqi; Li, Mingkun; Song, Kun; Jiang, Biqiang; Lu, Hua; Quan, Wangmin

    2016-11-11

    We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP) nanosheets were prepared via a liquid exfoliation approach exploiting N -methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI), a piece of BP-PI film was obtained after evaporating the mixture in a petri dish. The BP-PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP-PI film can act as a promising nonlinear optical device for laser applications.

  17. Sub-200 femtosecond dispersion-managed soliton ytterbium-doped fiber laser based on carbon nanotubes saturable absorber.

    PubMed

    Hou, Lei; Guo, Hongyu; Wang, Yonggang; Sun, Jiang; Lin, Qimeng; Bai, Yang; Bai, Jintao

    2018-04-02

    Ultrafast fiber laser light sources attract enormous interest due to the booming applications they are enabling, including long-distance communication, optical metrology, detecting technology of infra-biophotons, and novel material processing. In this paper, we demonstrate 175 fs dispersion-managed soliton (DMS) mode-locked ytterbium-doped fiber (YDF) laser based on single-walled carbon nanotubes (SWCNTs) saturable absorber (SA). The output DMSs have been achieved with repetition rate of 21.2 MHz, center wavelength of 1025.5 nm, and a spectral width of 32.7 nm. The operation directly pulse duration of 300 fs for generated pulse is the reported shortest pulse width for broadband SA based YDF lasers. By using an external grating-based compressor, the pulse duration could be compressed down to 175 fs. To the best of our knowledge, it is the shortest pulse duration obtained directly from YDF laser based on broadband SAs. In this paper, SWCNTs-SA has been utilized as the key optical component (mode locker) and the grating pair providing negative dispersion acts as the dispersion controller.

  18. Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

    NASA Astrophysics Data System (ADS)

    Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

    2005-07-01

    Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

  19. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    PubMed Central

    Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

    2017-01-01

    This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

  20. New Passivation Methods of GaAs.

    DTIC Science & Technology

    1980-01-01

    Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

  1. Triple-wavelength passively Q-switched ytterbium-doped fibre laser using zinc oxide nanoparticles film as a saturable absorber

    NASA Astrophysics Data System (ADS)

    Mohsin Al-Hayali, Sarah Kadhim; Hadi Al-Janabi, Abdul

    2018-07-01

    We report on the generation of a triple-wavelength passively Q-switched ytterbium-doped fibre laser using a saturable absorber (SA) based on zinc oxide nanoparticles (ZnO NPs) film. The SA was fabricated by embedding ZnO NPs powder into a polyvinyl alcohol as a host polymer. By properly adjusting the pump power and the polarization state, single-, dual- and triple-wavelength Q-switching are stably generated without additional components (such as optical filter, or fibre grating). For the triple wavelength operation, the fibre laser generates a maximum pulse repetition of 87.9 kHz with the shortest pulse duration of 2.7 μs. To the best of authors' knowledge, it's the first demonstration of triple-wavelength passively Q-switching fibre laser using ZnO NPs as a SA. Our results suggest that ZnO is a promising SA for multi-wavelength laser operation.

  2. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  3. Conductive graphene as passive saturable absorber with high instantaneous peak power and pulse energy in Q-switched regime

    NASA Astrophysics Data System (ADS)

    Zuikafly, Siti Nur Fatin; Khalifa, Ali; Ahmad, Fauzan; Shafie, Suhaidi; Harun, SulaimanWadi

    2018-06-01

    The Q-switched pulse regime is demonstrated by integrating conductive graphene as passive saturable absorber producing relatively high instantaneous peak power and pulse energy. The fabricated conductive graphene is investigated using Raman spectroscopy. The single wavelength Q-switching operates at 1558.28 nm at maximum input pump power of 151.47 mW. As the pump power is increased from threshold power of 51.6 mW to 151.47 mW, the pulse train repetition rate increases proportionally from 47.94 kHz to 67.8 kHz while the pulse width is reduced from 9.58 μs to 6.02 μs. The generated stable pulse produced maximum peak power and pulse energy of 32 mW and 206 nJ, respectively. The first beat node of the measured signal-to-noise ratio is about 62 dB indicating high pulse stability.

  4. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    NASA Astrophysics Data System (ADS)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  5. Phosphine Functionalization GaAs(111)A Surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Traub, M.; Biteen, J; Michalak, D

    Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

  6. Nitridation of porous GaAs by an ECR ammonia plasma

    NASA Astrophysics Data System (ADS)

    Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

    2006-02-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  7. Demonstration of passive saturable absorber by utilizing MWCNT-ABS filament as starting material

    NASA Astrophysics Data System (ADS)

    Zuikafly, S. N. F.; Ahmad, F.; Ibrahim, M. H.; Latif, A. A.; Harun, S. W.

    2017-06-01

    This work demonstrated a stable passively Q-switched laser with the employment MWCNTs dispersed in acrylonitrile butadiene styrene (ABS) resin (MWCNTs-ABS) based filament as passive saturable absorber. The simple fabrication process of the SA is further explained, started from the process of extruding the filament through a 3D printer nozzle at 210 °C to reduce the diameter from 1.75 mm to 200 μm. It is then weighed to about 25 mg and mixed with 1 ml acetone before sonicated for 5 minutes to dissolve the ABS. The resultant MWCNTs-acetone suspension is dropped on a glass slide to be characterized using Field-Emission Scanning Electron Microscope (FESEM) and Raman spectroscopy. It is also drop-casted on the end of a fiber ferrule to be integrated in the laser cavity. The proposed work revealed that the laser oscillated at about 1558 nm with threshold input pump power of 22.54 mW and maximum input pump power of 108.8 mW. The increase in pump power resulted in the increase in repetition rate where the pulse train increases from 8.96 kHz to 39.34 kHz while the pulse width decreases from 33.58 μs to 5.14 μs. The generated pulsed laser yields a maximum of 1.01 mW and 5.53 nJ of peak power and pulse energy respectively. The signal-to-noise ratio of 40 dB indicates that the generated pulse is stable.

  8. GaAs VLSI technology and circuit elements for DSP

    NASA Astrophysics Data System (ADS)

    Mikkelson, James M.

    1990-10-01

    Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

  9. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  10. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  11. Passively mode-locked pulse generation in a c-cut Nd:LuVO4 laser at 1086 nm with a semiconductor saturable-absorber mirror

    NASA Astrophysics Data System (ADS)

    Lin, Ja-Hon; Yang, Pao-Keng; Lin, Wei-Cheng

    2012-04-01

    We demonstrate a diode-pumped passively mode-locked (ML) c-cut Nd:LuVO4 laser with central wavelength at 1086 nm by shifting the reflectance band of the SESAM into a longer wavelength to result in larger loss around 1068 nm. At 15 W absorbed pump power, the highest output power of the ML pulse was about 2.6 W that corresponded to the 17.3% optical-to-optical conversion efficiency and the slope efficiency of laser was about 22.9%. Using our ML laser as the light source, we have also successfully measured the saturation fluence of the SESAM at 1086 nm.

  12. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    PubMed

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  13. Carbon dioxide absorber and regeneration assemblies useful for power plant flue gas

    DOEpatents

    Vimalchand, Pannalal; Liu, Guohai; Peng, Wan Wang

    2012-11-06

    Disclosed are apparatus and method to treat large amounts of flue gas from a pulverized coal combustion power plant. The flue gas is contacted with solid sorbents to selectively absorb CO.sub.2, which is then released as a nearly pure CO.sub.2 gas stream upon regeneration at higher temperature. The method is capable of handling the necessary sorbent circulation rates of tens of millions of lbs/hr to separate CO.sub.2 from a power plant's flue gas stream. Because pressurizing large amounts of flue gas is cost prohibitive, the method of this invention minimizes the overall pressure drop in the absorption section to less than 25 inches of water column. The internal circulation of sorbent within the absorber assembly in the proposed method not only minimizes temperature increases in the absorber to less than 25.degree. F., but also increases the CO.sub.2 concentration in the sorbent to near saturation levels. Saturating the sorbent with CO.sub.2 in the absorber section minimizes the heat energy needed for sorbent regeneration. The commercial embodiments of the proposed method can be optimized for sorbents with slower or faster absorption kinetics, low or high heat release rates, low or high saturation capacities and slower or faster regeneration kinetics.

  14. Characteristics of GaAs with inverted thermal conversion

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

  15. Thermally induced nonlinear optical absorption in metamaterial perfect absorbers

    NASA Astrophysics Data System (ADS)

    Guddala, Sriram; Kumar, Raghwendra; Ramakrishna, S. Anantha

    2015-03-01

    A metamaterial perfect absorber consisting of a tri-layer (Al/ZnS/Al) metal-dielectric-metal system with top aluminium nano-disks was fabricated by laser-interference lithography and lift-off processing. The metamaterial absorber had peak resonant absorbance at 1090 nm and showed nonlinear absorption for 600ps laser pulses at 1064 nm wavelength. A nonlinear saturation of reflectance was measured to be dependent on the average laser power incident and not the peak laser intensity. The nonlinear behaviour is shown to arise from the heating due to the absorbed radiation and photo-thermal changes in the dielectric properties of aluminium. The metamaterial absorber is seen to be damage resistant at large laser intensities of 25 MW/cm2.

  16. Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

    NASA Astrophysics Data System (ADS)

    Dagytė, Vilgailė; Barrigón, Enrique; Zhang, Wei; Zeng, Xulu; Heurlin, Magnus; Otnes, Gaute; Anttu, Nicklas; Borgström, Magnus T.

    2017-12-01

    Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.

  17. High-power Q-switched erbium-ytterbium codoped fiber laser using multiwalled carbon nanotubes saturable absorber

    NASA Astrophysics Data System (ADS)

    Ab Razak, Mohd Zulhakimi; Saleh, Zatul Saliza; Ahmad, Fauzan; Anyi, Carol Livan; Harun, Sulaiman W.; Arof, Hamzah

    2016-10-01

    Due to an enormous potential of pulsed lasers in applications such as manufacturing, metrology, environmental sensing, and biomedical diagnostics, a high-power and stable Q-switched erbium-ytterbium codoped double-clad fiber laser (EYDFL) incorporating of multiwall carbon nanotubes (MWCNTs) saturable absorber (SA) made based on polyvinyl alcohol (PVA) with a 3∶2 ratio is demonstrated. The SA was fabricated by mixing a dilute PVA solution with an MWCNTs homogeneous solution. Subsequently, the mixture was sonicated and centrifuged to produce a homogeneous suspension that was left to dry at room temperature to form the MWCNTs-PVA film. The SA was formed by inserting the film between a pair of FC/PC fiber connectors. Then, it was integrated into the EYDFL's ring cavity, which uses a 5-m-long erbium-ytterbium codoped fiber (EYDF). The lasing threshold for the Q-switched EYDFL was at 330 mW. At the maximum available pump power of 900 mW, the proposed EYDFL produced Q-switched pulses with a repetition rate of 74.85 kHz, pulsewidth of ˜3.6 μs, and an average output power of about 5 mW. The maximum energy per pulse of ˜85 nJ was obtained at pump power of ˜700 mW with peak power of 21 mW.

  18. Switchable single-longitudinal-mode dual-wavelength erbium-doped fiber laser based on one polarization-maintaining fiber Bragg grating incorporating saturable absorber

    NASA Astrophysics Data System (ADS)

    Feng, Suchun; Xu, Ou; Lu, Shaohua; Chen, Ming; Jian, Shuisheng

    2009-08-01

    Switchable single-longitudinal-mode (SLM) dual-wavelength erbium-doped fiber laser at room temperature is demonstrated. One fiber Bragg grating (FBG) directly written in a polarization-maintaining and photosensitive erbiumdoped fiber (PMPEDF) as the wavelength-selective component is used in a linear laser cavity. Due to the polarization hole burning (PHB) enhanced by the polarization-maintaining fiber Bragg grating (PMFBG), the laser can be designed to operate in stable dual-wavelength or wavelength-switching modes with a wavelength spacing of 0.202 nm by adjusting a polarization controller (PC). The stable SLM operation is guaranteed by a saturable absorber (SA). The optical signal-tonoise ratio (OSNR) of the laser is over 40 dB. The amplitude variation in nearly one and half an hour is less than 0.5 dB for both wavelengths.

  19. Electrodeposition of Metal on GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  20. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  1. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  2. Isolas of periodic passive Q-switching self-pulsations in the three-level:two-level model for a laser with a saturable absorber.

    PubMed

    Doedel, Eusebius J; Pando, Carlos L L

    2011-11-01

    We show that a fundamental feature of the three-level:two-level model, used to describe molecular monomode lasers with a saturable absorber, is the existence of isolas of periodic passive Q-switching (PQS) self-pulsations. A common feature of these closed families of periodic solutions is that they contain regions of stability of the PQS self-pulsation bordered by period-doubling and fold bifurcations, when the control parameter is either the incoherent external pump or the cavity frequency detuning. These findings unveil the fundamental solution structure that is at the origin of the phenomenon known as "period-adding cascades" in our system. Using numerical continuation techniques we determine these isolas systematically, as well as the changes they undergo as secondary parameters are varied.

  3. Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

    NASA Astrophysics Data System (ADS)

    Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

    2018-02-01

    A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

  4. Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications

    NASA Astrophysics Data System (ADS)

    Feng, Ting

    Today, GaAs based field effect transistors (FETs) have been used in a broad range of high-speed electronic military and commercial applications. However, their reliability still needs to be improved. Particularly the hydrogen induced degradation is a large remaining issue in the reliability of GaAs FETs, because hydrogen can easily be incorporated into devices during the crystal growth and virtually every device processing step. The main objective of this research work is to develop a new gate metallization system in order to reduce the hydrogen induced degradation from the gate region for GaAs based MESFETs and HEMTs. Cu/Ti gate metallization has been introduced into the GaAs MESFETs and HEMTs in our work in order to solve the hydrogen problem. The purpose of the use of copper is to tie up the hydrogen atoms and prevent hydrogen penetration into the device active region as well as to keep a low gate resistance for low noise applications. In this work, the fabrication technology of GaAs MESFETs and AlGaAs/GaAs HEMTs with Cu/Ti metallized gates have been successfully developed and the fabricated Cu/Ti FETs have shown comparable DC performance with similar Au-based GaAs FETs. The Cu/Ti FETs were subjected to temperature accelerated testing at NOT under 5% hydrogen forming gas and the experimental results show the hydrogen induced degradation has been reduced for the Cu/Ti FETs compared to commonly used AuPtTi based GaAs FETs. A long-term reliability testing for Cu/Ti FETs has also been carried out at 200°C and up to 1000hours and testing results show Cu/Ti FETs performed with adequate reliability. The failure modes were found to consist of a decrease in drain saturation current and pinch-off voltage and an increase in source ohmic contact resistance. Material characterization tools including Rutherford backscattering spectroscopy and a back etching technique were used in Cu/Ti GaAs FETs, and pronounced gate metal copper in-diffusion and intermixing compounds at the

  5. Intrinsic radiation tolerance of ultra-thin GaAs solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hirst, L. C.; Yakes, M. K.; Warner, J. H.

    2016-07-18

    Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

  6. Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M.

    We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PMmore » fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.« less

  7. Silica-coated gold nanorods as saturable absorber for bound-state pulse generation in a fiber laser with near-zero dispersion

    NASA Astrophysics Data System (ADS)

    Wang, Xude; Luo, Aiping; Luo, Zhichao; Liu, Meng; Zou, Feng; Zhu, Yanfang; Xue, Jianping; Xu, Wencheng

    2017-11-01

    We presented a bound-state operation in a fiber laser with near-zero anomalous dispersion based on a silica-coated gold nanorods (GNRs@SiO2) saturable absorber (SA). Using a balanced twin detector measurement technique, the modulation depth and nonsaturable loss of the GNRs@SiO2 SA were measured to be approximately 3.5% and 39.3%, respectively. By virtue of the highly nonlinear effect of the GNRs@SiO2 SA, the bound-state pulses could be easily observed. Besides the lower-order bound-state pulses with two, three, and four solitons, the higher-order bound states with up to 12 solitons were also obtained in the laser cavity. The pulse profiles of the higher-order bound states were further reconstructed theoretically. The experimental results would give further insight towards understanding the complex nonlinear dynamics of bound-state pulses in fiber lasers.

  8. Characterisation of semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

    1982-01-01

    Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

  9. Technology requirements for GaAs photovoltaic arrays

    NASA Technical Reports Server (NTRS)

    Scott-Monck, J.; Rockey, D.

    1981-01-01

    An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

  10. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  11. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  12. Supernormal hardness increase of dilute Ga(As, N) thin films

    NASA Astrophysics Data System (ADS)

    Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

    2017-03-01

    Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

  13. High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Allard Jr, Lawrence Frederick

    2016-01-01

    (001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize themore » binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION« less

  14. The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

    2017-06-01

    Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

  15. Doping assessment in GaAs nanowires.

    PubMed

    Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

    2018-06-08

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  16. Doping assessment in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

    2018-06-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  17. Caractérisation expérimentale et modélisation numérique des propriétés spectroscopiques d'absorbants saturables pour le déclenchement passif de laser verre erbium

    NASA Astrophysics Data System (ADS)

    Girard, S.; Shcherbitsky, V.; Fromager, M.; Aït Ameur, K.; Moncorgé, R.; Ferrand, B.; Montagne, J.

    2002-06-01

    Une comparaison entre différents absorbants saturables (LMA, MALO, ZnS et ZnSe dopés Col^+ et ZnSe dopé Cr^{2+}) utilisables comme interrupteur optique passif pour déclencher les sources lasers verre erbium à 1.53 μm est présentée. Des expériences de saturation en simple passage sont interprétées en tenant compte de la distribution spatiale et temporelle du laser de pompe. Cette technique permet d'obtenir des sections efficaces de saturation effectives fiables et indépendantes des conditions de mesure sans introduire artificiellement d'absorption dans l'état excité qui, en principe, n'existe pas dans ce type de système contrairement aux études effectuées jusqu'ici sur ces matériaux.

  18. Saturation spectroscopy of an optically opaque argon plasma

    NASA Astrophysics Data System (ADS)

    Eshel, Ben; Rice, Christopher A.; Perram, Glen P.

    2018-02-01

    A pure argon (Ar) plasma formed by a capacitively coupled radio-frequency discharge was analyzed using Doppler-free saturation spectroscopy. The expected line shape was a characteristic of sub-Doppler spectra in the presence of velocity-changing collisions, a narrow Lorentzian centered on a Doppler pedestal, but the observed line shapes contain a multi-peak structure, attributed to opacity of the medium. Laser absorption and inter-modulated fluorescence spectroscopy measurements were made to validate opacity as a driving factor of the observed line shapes. Spectral line shapes are further complicated by the spatial dependence of the pump laser, probe laser and of the absorbing medium, as well as the large absorbance of the transition under investigation. A numerical line shape was derived by accounting for the spatial variation of the pump and probe with a saturated line shape obtained from the rate equations for an equivalent two-level system. This simulated line shape shows good qualitative agreement with the trends observed in the data.

  19. Dual-wavelength passively Q-switched ytterbium-doped fiber laser using Fe3O4-nanoparticle saturable absorber and intracavity polarization

    NASA Astrophysics Data System (ADS)

    Al-Hayali, S. K. M.; Al-Janabi, A. H.

    2018-03-01

    We have experimentally demonstrated the operation of a dual-wavelength passively Q-switched ytterbium-doped fiber laser by using a saturable absorber (SA) based on Fe3O4 nanoparticles in a magnetic fluid. The SA was fabricated by depositing magnetic fluid at the end of an optical fiber ferrule. By performing adjustments to the pump power and polarization controller state in the cavity, a stable dual-wavelength lasing operation was generated without intracavity spectral filters or modulation elements. The Q-switched laser output was achieved at a pump threshold of 80 mW with a maximum output pulse energy of 38.8 nJ, a repetition rate of 73.4 kHz and a minimum pulse width of 3.4 µs. To the best of the authors’ knowledge, this is the first demonstration of a dual-wavelength passively Q-switched fiber laser using Fe3O4 nanoparticles as the SA in the 1.0 µm operation region.

  20. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    NASA Astrophysics Data System (ADS)

    Ning, Shougui; Feng, Guoying; Dai, Shenyu; Zhang, Hong; Zhang, Wei; Deng, Lijuan; Zhou, Shouhuan

    2018-02-01

    A mid-infrared (mid-IR) semiconductor saturable absorber mirror (SESAM) based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  1. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  2. Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

    NASA Astrophysics Data System (ADS)

    Jacobi, K.; Geelhaar, L.; Márquez, J.

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

  3. Electrode pattern design for GaAs betavoltaic batteries

    NASA Astrophysics Data System (ADS)

    Haiyang, Chen; Jianhua, Yin; Darang, Li

    2011-08-01

    The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

  4. GaAs core--shell nanowires for photovoltaic applications.

    PubMed

    Czaban, Josef A; Thompson, David A; LaPierre, Ray R

    2009-01-01

    We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

  5. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M.

    2017-02-22

    Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novelmore » molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.« less

  6. GaAs homojunction solar cell development

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

    1980-01-01

    The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

  7. Transition metal dichalcogenide (WS2 and MoS2) saturable absorbers for Q-switched Er-doped fiber lasers

    NASA Astrophysics Data System (ADS)

    Li, Lu; Lv, Ruidong; Liu, Sicong; Wang, Xi; Wang, Yonggang; Chen, Zhendong; Wang, Jiang

    2018-05-01

    This report demonstrates a stable Q-switched Er-doped fiber laser with MoS2 (WS2)-based saturable absorber (SA) in the net normal dispersion regime. The SA is obtained by mixing MoS2 (WS2) nanosheets with polyvinyl alcohol (PVA) into polystyrene cells, and then evaporating them to form MoS2 (WS2)/PVA film. The modulation depth values for MoS2/PVA and WS2/PVA are measured to be 2.7% and 2.1% respectively. Employing the MoS2 (WS2)/PVA film in the Er-doped fiber laser cavity, stable Q-switching operation is achieved with central wavelength of 1560 nm. The shortest pulse durations of the two Q-switched fiber lasers are, respectively, 3.97 and 3.71 µs, and their maximum single pulse energies are measured to be 131.52 and 126.96 nJ. The experimental results clearly show that MoS2 (WS2) is a promising nonlinear material, and that improvements in Q-switching performance due to two SAs in the net normal dispersion regime might be helpful in the design of fiber lasers.

  8. Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

    NASA Astrophysics Data System (ADS)

    Madan, Jaya; Chaujar, Rishu

    2017-02-01

    This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

  9. Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

    1982-01-01

    Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

  10. Tunable Q-switched erbium doped fiber laser based on metal transition oxide saturable absorber and refractive index characteristic of multimode interference effects

    NASA Astrophysics Data System (ADS)

    Mohammed, D. Z.; Khaleel, Wurood Abdulkhaleq; Al-Janabi, A. H.

    2017-12-01

    Ferro-oxide (Fe3O4) nanoparticles were used as a saturable absorber (SA) for a passively Q-switched erbium doped fiber laser (EDFL) with ring cavity. The Q-switching operation was achieved at a pump threshold of 80 mW. The proposed fiber laser produces stable pulses train of repetition rate ranging from 25 kHz to 80 kHz as the pump power increases from threshold to 342 mW. The minimum recorded pulse width was 2.7 μs at 342 mW. The C-band tunability operation was performed using single mode-multimode-single mode fiber (SM-MM-SM) structure. The laser exhibited a total tuning range of 7 nm, maximum sensitivity of 106.9 nm, optical signal to noise ratio (OSNR) of 38 dB and 3-dB linewidth of 0.06 nm.

  11. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  12. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  13. Generation of “gigantic” ultra-short microwave pulses based on passive mode-locking effect in electron oscillators with saturable absorber in the feedback loop

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ginzburg, N. S., E-mail: ginzburg@appl.sci-nnov.ru; Denisov, G. G.; Vilkov, M. N.

    2016-05-15

    A periodic train of powerful ultrashort microwave pulses can be generated in electron oscillators with a non-linear saturable absorber installed in the feedback loop. This method of pulse formation resembles the passive mode-locking widely used in laser physics. Nevertheless, there is a specific feature in the mechanism of pulse amplification when consecutive energy extraction from different fractions of a stationary electron beam takes place due to pulse slippage over the beam caused by the difference between the wave group velocity and the electron axial velocity. As a result, the peak power of generated “gigantic” pulses can exceed not only themore » level of steady-state generation but also, in the optimal case, the power of the driving electron beam.« less

  14. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  15. Comparisons of single event vulnerability of GaAs SRAMS

    NASA Astrophysics Data System (ADS)

    Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

    1986-12-01

    A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

  16. Prediction of dislocation generation during Bridgman growth of GaAs crystals

    NASA Technical Reports Server (NTRS)

    Tsai, C. T.; Yao, M. W.; Chait, Arnon

    1992-01-01

    Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

  17. Prediction of dislocation generation during Bridgman growth of GaAs crystals

    NASA Astrophysics Data System (ADS)

    Tsai, C. T.; Yao, M. W.; Chait, Arnon

    1992-11-01

    Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

  18. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  19. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    PubMed Central

    Ohno, Takeo; Oyama, Yutaka

    2012-01-01

    In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

  20. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Weiquan; Becker, Jacob; Liu, Shi

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

  1. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tanoto, H.; Loke, W. K.; Yoon, S. F.

    In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

  2. Pulse compression in an electro-optic Q-switched diode-pumped YVO4/Nd:YVO4 laser with a Cr4+:YAG saturable absorber.

    PubMed

    Li, Tao; Zhao, Shengzhi; Zhuo, Zhuang; Yang, Kejian; Li, Guiqiu; Li, Dechun

    2009-04-20

    A diode end-pumped doubly Q-switched YVO4/Nd:YVO4 laser has been realized for the first time to our knowledge by using both an electro-optic (EO) modulator and a Cr4):YAG saturable absorber. A 3.8 ns pulse width is generated by this laser under a pump power of 15 W at 2 kHz, which is obviously compressed in comparison with that of 8.8 ns from a single actively EO Q-switched laser. Under the same conditions, peak power values of 174.7 and 93 kW are also obtained. A coupled equation is given to theoretically analyze the experimental data. The experimental and theoretical results show that the doubly Q-switched laser has the advantages of a shorter pulse width and higher pulse peak power in contrast with a singly Q-switched laser.

  3. Large-energy, narrow-bandwidth laser pulse at 1645 nm in a diode-pumped Er:YAG solid-state laser passively Q-switched by a monolayer graphene saturable absorber.

    PubMed

    Zhou, Rong; Tang, Pinghua; Chen, Yu; Chen, Shuqing; Zhao, Chujun; Zhang, Han; Wen, Shuangchun

    2014-01-10

    Nonlinear transmission parameters of monolayer graphene at 1645 nm were obtained. Based on the monolayer graphene saturable absorber, a 1532 nm LD pumped 1645 nm passively Q-switched Er:YAG laser was demonstrated. Under the pump power of 20.8 W, a 1645 nm Q-switched pulse with FWHM of 0.13 nm (without the use of etalon) and energy of 13.5 μJ per pulse can be obtained. To the best of our knowledge, this is the highest pulse energy for graphene-based passively Q-switched Er:YAG laseroperating at 1645 nm, suggesting the potentials of graphene materials for high-energy solid-state laser applications.

  4. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  5. Switchable single-longitudinal-mode dual-wavelength erbium-doped fiber ring laser based on one polarization-maintaining fiber Bragg grating incorporating saturable absorber and feedback fiber loop

    NASA Astrophysics Data System (ADS)

    Feng, Suchun; Xu, Ou; Lu, Shaohua; Ning, Tigang; Jian, Shuisheng

    2009-06-01

    Switchable single-longitudinal-mode (SLM) dual-wavelength erbium-doped fiber ring laser based on one polarization-maintaining fiber Bragg grating (PMFBG) is demonstrated. Due to the enhancement of the polarization hole burning (PHB) by the PMFBG, the laser can be designed to operate in stable dual-wavelength or wavelength-switching modes with a wavelength spacing of 0.336 nm at room temperature by adjusting a polarization controller (PC). The stable SLM operation is guaranteed by a compound-ring cavity and a saturable absorber (SA). The optical signal-to-noise ratio (OSNR) is over 45 dB. The amplitude variation in nearly one and half an hour is less than 0.2 dB.

  6. GaAs thin films and methods of making and using the same

    DOEpatents

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  7. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  8. Metastable bcc phase formation in 3d ferromagnetic transition metal thin films sputter-deposited on GaAs(100) substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Minakawa, Shigeyuki, E-mail: s-minakawa@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Futamoto, Masaaki

    2015-05-07

    Co{sub 100−x}Fe{sub x} and Ni{sub 100−y}Fe{sub y} (at. %, x = 0–30, y = 0–60) films of 10 nm thickness are prepared on GaAs(100) substrates at room temperature by using a radio-frequency magnetron sputtering system. The detailed growth behavior is investigated by in-situ reflection high-energy electron diffraction. (100)-oriented Co and Ni single-crystals with metastable bcc structure are formed in the early stage of film growth, where the metastable structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the Co and the Ni films start to transform into more stable hcp and fcc structures through atomic displacements parallel to bcc(110) slide planes,more » respectively. The stability of bcc phase is improved by adding a small volume of Fe atoms into a Co film. The critical thickness of bcc phase formation is thicker than 10 nm for Co{sub 100−x}Fe{sub x} films with x ≥ 10. On the contrary, the stability of bcc phase for Ni-Fe system is less than that for Co-Fe system. The critical thicknesses for Ni{sub 100−y}Fe{sub y} films with y = 20, 40, and 60 are 1, 3, and 5 nm, respectively. The Co{sub 100−x}Fe{sub x} single-crystal films with metastable bcc structure formed on GaAs(100) substrates show in-plane uniaxial magnetic anisotropies with the easy direction along GaAs[011], similar to the case of Fe film epitaxially grown on GaAs(100) substrate. A Co{sub 100−x}Fe{sub x} film with higher Fe content shows a higher saturation magnetization and a lower coercivity.« less

  9. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

  10. Growth and characteristics of p-type doped GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  11. Double Q-switch Ho:Sc2SiO5 laser by acousto-optic modulator combined with Cr2+:ZnSe saturable absorber

    NASA Astrophysics Data System (ADS)

    Yang, Xiao-tao; Zhang, Peng; Xie, Wen-qiang; Li, Lin-jun

    2018-01-01

    A double Q-switch (DQS) Ho:Sc2SiO5 laser modulated by a acousto-optic modulators (AOM) combined with a Cr2+:ZnSe saturable absorber (SA) was reported for the first time. The actively Q-switch (AQS) and passively Q-switch (PQS) were also studied. For the DQS mode, a maximum average output power of 2.49 W under the incident pump power of 12.5 W was obtained, corresponding to a slope efficiency of 24%. The characteristics of the DQS Ho:SSO laser versus different repetition frequencies (RF) of the AOM were researched. The maximum single-pulse energy of the DQS Ho:SSO laser was calculated to 1.98 mJ. The maximum peak power of the DQS Ho:SSO laser was 49.5 kW. The output beam quality factor M2 of DQS Ho:SSO laser was measured to be 1.15 with the highest peak power by knife-edge method at different positions.

  12. Spectrum of the Nuclear Environment for GaAs Spin Qubits.

    PubMed

    Malinowski, Filip K; Martins, Frederico; Cywiński, Łukasz; Rudner, Mark S; Nissen, Peter D; Fallahi, Saeed; Gardner, Geoffrey C; Manfra, Michael J; Marcus, Charles M; Kuemmeth, Ferdinand

    2017-04-28

    Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over 6 orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as 1/f^{2} for frequency f≳1  Hz. Increasing the applied magnetic field from 0.1 to 0.75 T suppresses electron-mediated spin diffusion, which decreases the spectral content in the 1/f^{2} region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime (≲16π pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime (≳32 π pulses), where longitudinal Overhauser fluctuations with a 1/f spectrum dominate.

  13. Sulfur doping of GaAs with (NH4)2Sx solution

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Lam

    1999-01-01

    A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

  14. Relation between trinucleotide GAA repeat length and sensory neuropathy in Friedreich's ataxia.

    PubMed

    Santoro, L; De Michele, G; Perretti, A; Crisci, C; Cocozza, S; Cavalcanti, F; Ragno, M; Monticelli, A; Filla, A; Caruso, G

    1999-01-01

    To verify if GAA expansion size in Friedreich's ataxia could account for the severity of sensory neuropathy. Retrospective study of 56 patients with Friedreich's ataxia selected according to homozygosity for GAA expansion and availability of electrophysiological findings. Orthodromic sensory conduction velocity in the median nerve was available in all patients and that of the tibial nerve in 46 of them. Data of sural nerve biopsy and of a morphometric analysis were available in 12 of the selected patients. The sensory action potential amplitude at the wrist (wSAP) and at the medial malleolus (m mal SAP) and the percentage of myelinated fibres with diameter larger than 7, 9, and 11 microm in the sural nerve were correlated with disease duration and GAA expansion size on the shorter (GAA1) and larger (GAA2) expanded allele in each pair. Pearson's correlation test and stepwise multiple regression were used for statistical analysis. A significant inverse correlation between GAA1 size and wSAP, m mal SAP, and percentage of myelinated fibres was found. Stepwise multiple regression showed that GAA1 size significantly affects electrophysiological and morphometric data, whereas duration of disease has no effect. The data suggest that the severity of the sensory neuropathy is probably genetically determined and that it is not progressive.

  15. Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

    PubMed

    Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

    2017-11-10

    Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

  16. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  17. Performance of chemical vapor deposition fabricated graphene absorber mirror in Yb3+ : Sc2SiO5 mode-locked laser

    NASA Astrophysics Data System (ADS)

    Cai, Wei; Li, Yaqi; Zhu, Hongtong; Jiang, Shouzhen; Xu, Shicai; Liu, Jie; Zheng, Lihe; Su, Liangbi; Xu, Jun

    2014-12-01

    A reflective graphene saturable absorber mirror (SAM) was successfully fabricated by chemical vapor deposition technology. A stable diode-pumped passively mode-locked Yb3+:Sc2SiO5 laser using a graphene SAM as a saturable absorber was accomplished for the first time. The measured average output power amounts to 351 mW under the absorbed pump power of 12.5 W. Without prisms compensating for dispersion, the minimum pulse duration of 7 ps with a repetition rate of 97 MHz has been obtained at the central wavelength of 1063 nm. The corresponding peak power and the maximum pulse energy were 516 W and 3.6 nJ, respectively.

  18. Coexistence effect of UVA absorbers to increase their solubility and stability of supersaturation.

    PubMed

    Endo, M; Mukawa, T; Sato, N; Maezawa, D; Ohtsu, Y; Kuroda, A; Wakabayashi, M; Asakura, K

    2014-12-01

    Sunscreens containing UVA absorbers in high concentrations are expected to be developed, since recent studies have suggested the possibility of involvement of UVA ray in skin cancer and early skin aging. Solubility and stability of supersaturation of UVA absorbers in UVB absorber were determined in the absence and the presence of cosmetic oil. Coexistence effect of UVA absorbers was analyzed to dissolve them in high concentrations. Two UVA absorbers, diethylamino hydroxybenzoyl hexyl benzoate (DHHB) and butyl methoxydibenzoylmethane (BMDM), a UVB absorber, 2-ethylhexyl methoxycinnamate (EHMC), and a cosmetic oil, 2-ethylhexyl ester of oligomer of hydroxystearic acid (EH-O-HSA), were used. Their solutions were prepared at 80°C and cooled to 5°C. The solid DHHB and/or BMDM were added to it, and the time evolution of concentrations of the UVA absorbers in the solution phase was monitored. At the saturation in the absence of EH-O-HSA at 5°C, weight ratio of DHHB and BMDM to EHMC was 0.39/1.00 and 0.22/1.00, respectively. Addition of EH-O-HSA slightly changed the solubility of DHHB and BMDM. When the weight ratio of EH-O-HSA to EHMC was 0.20/1.00, weight ratio of DHHB and BMDM to EHMC was 0.35/1.00 and 0.25/1.00, respectively at the saturation at 5°C. In the presence of EH-O-HSA, a strong coexistence effect of DHHB and BMDM was found on their solubility. A thermodynamically stable saturated solution at 5°C having the composition that DHHB: BMDM: EHMC: EH-O-HSA = 0.47: 0.46: 1.00: 0.20 was obtained by the simultaneous addition of solid DHHB and BMDM into the initial solution. The solution type composite having the highest concentrations of DHHB and BMDM prepared in this study exhibited critical wavelength at 368 nm that was just below the border for sunscreens being qualified as 'Broad Spectrum' protection under the new rule launched by US FDA. © 2014 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

  19. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

    PubMed Central

    2010-01-01

    We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

  20. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    NASA Astrophysics Data System (ADS)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  1. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  2. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  3. Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

    NASA Technical Reports Server (NTRS)

    Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

    1988-01-01

    GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

  4. Advanced GaAs Process Modeling. Volume 1

    DTIC Science & Technology

    1989-05-01

    COSATI CODES 18 . SUBJECT TERMS (Continue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Gallium Arsenide, MESFET, Process...Background 9 3.2 Model Calculations 10 3.3 Conclusions 17 IV. ION-IMPLANTATION INTO GaAs PROFILE DETERMINATION 18 4.1 Ion Implantation Profile...Determination in GaAs 18 4.1.1. Background 18 4.1.2. Experimental Measurements 20 4.1.3. Results 22 4.1.3.1 Ion-Energy Dependence 22 4.1.3.2. Tilt and Rotation

  5. Passively synchronized Q-switched and mode-locked dual-band Tm3+:ZBLAN fiber lasers using a common graphene saturable absorber

    NASA Astrophysics Data System (ADS)

    Jia, Chenglai; Shastri, Bhavin J.; Abdukerim, Nurmemet; Rochette, Martin; Prucnal, Paul R.; Saad, Mohammed; Chen, Lawrence R.

    2016-11-01

    Dual-band fiber lasers are emerging as a promising technology to penetrate new industrial and medical applications from their dual-band properties, in addition to providing compactness and environmental robustness from the waveguide structure. Here, we demonstrate the use of a common graphene saturable absorber and a single gain medium (Tm3+:ZBLAN fiber) to implement (1) a dual-band fiber ring laser with synchronized Q-switched pulses at wavelengths of 1480 nm and 1840 nm, and (2) a dual-band fiber linear laser with synchronized mode-locked pulses at wavelengths of 1480 nm and 1845 nm. Q-switched operation at 1480 nm and 1840 nm is achieved with a synchronized repetition rate from 20 kHz to 40.5 kHz. For synchronous mode-locked operation, pulses with full-width at half maximum durations of 610 fs and 1.68 ps at wavelengths of 1480 nm and 1845 nm, respectively, are obtained at a repetition rate of 12.3 MHz. These dual-band pulsed sources with an ultra-broadband wavelength separation of ~360 nm will add new capabilities in applications including optical sensing, spectroscopy, and communications.

  6. Passively synchronized Q-switched and mode-locked dual-band Tm3+:ZBLAN fiber lasers using a common graphene saturable absorber.

    PubMed

    Jia, Chenglai; Shastri, Bhavin J; Abdukerim, Nurmemet; Rochette, Martin; Prucnal, Paul R; Saad, Mohammed; Chen, Lawrence R

    2016-11-02

    Dual-band fiber lasers are emerging as a promising technology to penetrate new industrial and medical applications from their dual-band properties, in addition to providing compactness and environmental robustness from the waveguide structure. Here, we demonstrate the use of a common graphene saturable absorber and a single gain medium (Tm 3+ :ZBLAN fiber) to implement (1) a dual-band fiber ring laser with synchronized Q-switched pulses at wavelengths of 1480 nm and 1840 nm, and (2) a dual-band fiber linear laser with synchronized mode-locked pulses at wavelengths of 1480 nm and 1845 nm. Q-switched operation at 1480 nm and 1840 nm is achieved with a synchronized repetition rate from 20 kHz to 40.5 kHz. For synchronous mode-locked operation, pulses with full-width at half maximum durations of 610 fs and 1.68 ps at wavelengths of 1480 nm and 1845 nm, respectively, are obtained at a repetition rate of 12.3 MHz. These dual-band pulsed sources with an ultra-broadband wavelength separation of ~360 nm will add new capabilities in applications including optical sensing, spectroscopy, and communications.

  7. Rare-earth gate oxides for GaAs MOSFET application

    NASA Astrophysics Data System (ADS)

    Kwon, Kwang-Ho; Yang, Jun-Kyu; Park, Hyung-Ho; Kim, Jongdae; Roh, Tae Moon

    2006-08-01

    Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2O 3, (Gd xLa 1- x) 2O 3, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd xLa 1- x) 2O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2O 3. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2. Energy band parameters such as Δ EC, Δ EV, and Eg were effectively controlled by the film composition.

  8. Failure Mechanisms of GaAs Transistors - A Literature Survey

    DTIC Science & Technology

    1990-03-01

    doping profile cannot be as sharp as with epitaxial methods. This is the result of the statistics of the implantation and the general diffusion that...Speed GaAs Logic Gates 5.1 GaAs PLANAR TRANSITOR STRUCTURES USED IN IC’S Some planar transistor structures used in IC’s with examples of the

  9. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    NASA Astrophysics Data System (ADS)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  10. Photon counting microstrip X-ray detectors with GaAs sensors

    NASA Astrophysics Data System (ADS)

    Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

    2018-01-01

    High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

  11. Blood oxygen saturation of frozen tissue determined by hyper spectral imaging

    NASA Astrophysics Data System (ADS)

    Braaf, Boy; Nadort, Annemarie; Faber, Dirk; ter Wee, Rene; van Leeuwen, Ton; Aalders, Maurice

    2008-02-01

    A method is proposed for determining blood oxygen saturation in frozen tissue. The method is based on a spectral camera system equipped with an Acoustic-Optical-Tuneable-Filter. The HSI-setup is validated by measuring series of unfrozen and frozen samples of a hemoglobin-solution, a hemoglobin-intralipid mixture and whole blood with varying oxygen saturation. The theoretically predicted linear relation between oxygen saturation and absorbance was observed in both the frozen sample series and the unfrozen series. In a final proof of principal, frozen myocardial tissue was measured. Higher saturation values were recorded for ventricle and atria tissue compared to the septum and connective tissue. These results are not validated by measurements with another method. The formation of methemoglobin during freezing and the presence of myoglobin in the tissue turned out to be possible sources of error.

  12. Laser Induced Electrodeposition on Polyimide and GaAs Substrates

    DTIC Science & Technology

    1983-10-01

    6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

  13. Investigation of ZnSe-coated silicon substrates for GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

    1993-01-01

    Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

  14. Cathodoluminescence Characterization of Ion Implanted GaAs.

    DTIC Science & Technology

    1980-03-01

    technique that can be used to characterize the semiconductor device "in situ" before further processing can save the Air Force valuable time as well...Patterson Air Force Base,Ohio i! i ill i I ;Wow AFIT/DS/PH/80- I.i1I LEVELOO CATHODOLUMINESCENCE CHARACTERIZATION OF ION IPLANTED GaAs D I SSERUrAT ION...CATODOLUMINESCENCE CHARACTERIZATION .’ a .... OF ION IMPLANTED GaAs’ - .. .. Dtriy’ t’ c:’/ A’: t 1. - Cc;-,P by an i’or Milton L one B.S., M.S. Major USAF Approved

  15. Amplification in Double Heterostructure GaAs Lasers.

    DTIC Science & Technology

    1981-03-15

    done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

  16. GaAs Surface Passivation for Device Applications.

    DTIC Science & Technology

    1981-12-01

    Ga203.’" . QI. a) / b) x 2.5 •• 24 21 18 As3d a) b) x 2. / 0 II 2 46 43 40 BINDING ENERGY (eV) Fig. 3 XPS spectra from a Ga2O3 covered GaAs surface of Ga...wU 24 21 Gas 18 SAs3d As2O3 ) .. 46 43 40 BINDING ENERGY (e) Fig. 4 XPS spectra from a AsJ03- Ga2O3 covered GaAs surface of Ga 3d (upper panel) and As

  17. Multi-spectral imaging of oxygen saturation

    NASA Astrophysics Data System (ADS)

    Savelieva, Tatiana A.; Stratonnikov, Aleksander A.; Loschenov, Victor B.

    2008-06-01

    The system of multi-spectral imaging of oxygen saturation is an instrument that can record both spectral and spatial information about a sample. In this project, the spectral imaging technique is used for monitoring of oxygen saturation of hemoglobin in human tissues. This system can be used for monitoring spatial distribution of oxygen saturation in photodynamic therapy, surgery or sports medicine. Diffuse reflectance spectroscopy in the visible range is an effective and extensively used technique for the non-invasive study and characterization of various biological tissues. In this article, a short review of modeling techniques being currently in use for diffuse reflection from semi-infinite turbid media is presented. A simple and practical model for use with a real-time imaging system is proposed. This model is based on linear approximation of the dependence of the diffuse reflectance coefficient on relation between absorbance and reduced scattering coefficient. This dependence was obtained with the Monte Carlo simulation of photon propagation in turbid media. Spectra of the oxygenated and deoxygenated forms of hemoglobin differ mostly in the red area (520 - 600 nm) and have several characteristic points there. Thus four band-pass filters were used for multi-spectral imaging. After having measured the reflectance, the data obtained are used for fitting the concentration of oxygenated and free hemoglobin, and hemoglobin oxygen saturation.

  18. Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

    1986-01-01

    A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

  19. Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

    NASA Astrophysics Data System (ADS)

    Yen, M. Y.; Haas, T. W.

    1990-06-01

    We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

  20. Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

    NASA Astrophysics Data System (ADS)

    Yeh, Hsi-Jen J.; Smith, John S.

    1994-03-01

    The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

  1. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    NASA Astrophysics Data System (ADS)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  2. Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

    DTIC Science & Technology

    1995-10-05

    improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

  3. The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model.

    PubMed

    Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Te Riele, Hein; Pook, Mark A

    2012-04-01

    Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. Copyright © 2012 Elsevier Inc. All rights reserved.

  4. The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model

    PubMed Central

    Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; te Riele, Hein; Pook, Mark A.

    2013-01-01

    Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. PMID:22289650

  5. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  6. Quantitative impact of small angle forward scatter on whole blood oximetry using a Beer-Lambert absorbance model.

    PubMed

    LeBlanc, Serge Emile; Atanya, Monica; Burns, Kevin; Munger, Rejean

    2011-04-21

    It is well known that red blood cell scattering has an impact on whole blood oximetry as well as in vivo retinal oxygen saturation measurements. The goal of this study was to quantify the impact of small angle forward scatter on whole blood oximetry for scattering angles found in retinal oximetry light paths. Transmittance spectra of whole blood were measured in two different experimental setups: one that included small angle scatter in the transmitted signal and one that measured the transmitted signal only, at absorbance path lengths of 25, 50, 100, 250 and 500 µm. Oxygen saturation was determined by multiple linear regression in the 520-600 nm wavelength range and compared between path lengths and experimental setups. Mean calculated oxygen saturation differences between setups were greater than 10% at every absorbance path length. The deviations to the Beer-Lambert absorbance model had different spectral dependences between experimental setups, with the highest deviations found in the 520-540 nm range when scatter was added to the transmitted signal. These results are consistent with other models of forward scatter that predict different spectral dependences of the red blood cell scattering cross-section and haemoglobin extinction coefficients in this wavelength range.

  7. Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  8. GaAs Spectrometer for Electron Spectroscopy at Europa

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Barnett, A. M.

    2016-12-01

    We propose a GaAs based electron spectrometer for a hypothetical future mission orbiting Europa. Previous observations at Europa's South Pole with the Hubble Space Telescope of hydrogen Lyman-α and oxygen OI 130.4 nm emissions were consistent with water vapor plumes [Roth et al., 2014, Science 343, 171]. Future observations and analysis of plumes on Europa could provide information about its subsurface structure and the distribution of liquid water within its icy shells [Rhoden at al. 2015, Icarus 253, 169]. In situ low energy (1keV - 100keV) electron spectroscopy along with UV imaging either in situ or with the Hubble Space Telescope Wide Field Camera 3 or similar would allow verification of the auroral observations being due to electron impact excitation of water vapor plumes. The proposed spectrometer includes a novel GaAs p+-i-n+ photodiode and a custom-made charge-sensitive preamplifier. The use of an early prototype GaAs detector for direct electron spectroscopy has already been demonstrated in ground based applications [Barnett et al., 2012, J. Instrum. 7, P09012]. Based on previous radiation hardness measurements of GaAs, the expected duration of the mission without degradation of the detector performance is estimated to be 4 months. Simulations and laboratory experiments characterising the detection performance of the proposed system are presented.

  9. Defect interactions in GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

  10. Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

    NASA Astrophysics Data System (ADS)

    Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

    1999-02-01

    Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

  11. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

    PubMed

    Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

    2011-02-09

    We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

  12. Titanium Dioxide (TiO2) film as a new saturable absorber for generating mode-locked Thulium-Holmium doped all-fiber laser

    NASA Astrophysics Data System (ADS)

    Mohd Rusdi, Muhammad Farid; Latiff, Anas Abdul; Paul, Mukul Chandra; Das, Shyamal; Dhar, Anirban; Ahmad, Harith; Harun, Sulaiman Wadi

    2017-03-01

    We report the generation of mode-locked thulium-holmium doped fiber laser (THDFL) at 1979 nm. This is a first demonstration of mode-locked by using Titanium Dioxide (TiO2) film as a saturable absorber (SA). A piece of 1 mm×1 mm TiO2 film was sandwiched in between two fiber ferrule in the cavity. Fabrication process of TiO2 film incorporated a TiO2 and a polyvinyl alcohol (PVA). The stable 9 MHz repetition rate of mode-locked mode operation with 58 dB SNR was generated under pump power of 902-1062 mW. At maximum pump power, the mode-locked THDFL has output power and pulse energy of 15 mW and 1.66 nJ, respectively. Our results demonstrate the TiO2 can be used promisingly in ultrafast photonics applications.

  13. Transient GaAs plasmonic metasurfaces at terahertz frequencies

    DOE PAGES

    Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; ...

    2016-12-09

    Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to moremore » complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.« less

  14. GaAs QWIP Array Containing More Than a Million Pixels

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

    2005-01-01

    A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

  15. Spin-lattice relaxation of optically polarized nuclei in p -type GaAs

    NASA Astrophysics Data System (ADS)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Cherbunin, R. V.; Sokolov, P. S.; Yakovlev, D. R.; Bayer, M.; Suter, D.; Kavokin, K. V.

    2018-04-01

    Spin-lattice relaxation of the nuclear spin system in p -type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time T1 of optically pumped nuclei "in the dark," that is, in the absence of illumination. The measured T1 values fall into the subsecond time range, being three orders of magnitude shorter than in earlier studied n -type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependencies of T1 in p -GaAs, showing no similarity to those in n -GaAs. This unexpected behavior finds its explanation in the spatial selectivity of the optical pumping in p -GaAs, that is only efficient in the vicinity of shallow donors, together with the quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs. The developed theoretical model explains the whole set of experimental results.

  16. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

    2010-12-01

    Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

  17. Implementation and Performance of GaAs Digital Signal Processing ASICs

    NASA Technical Reports Server (NTRS)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  18. Paths to light trapping in thin film GaAs solar cells.

    PubMed

    Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

    2018-03-19

    It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

  19. Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

    DTIC Science & Technology

    1994-02-28

    from the bandgap discontinuity (as was proposed in my publications [1,2]). Also, by using superlattice structure A1GaAs / GaAs: Er / AlGaAs, we could...n ipact ightemiting evic 10 3. The AlGaAs/GaAs: Er/A1GaAs superlattice structure. For the first time we designed the unipolar n’ - superlattice - n...structure as shown in Figure 5. The GaAs: Er/Alo.45Gao.55As superlattice was grown by MBE on an n’ GaAs: Si substrate. It consisted of 60 periods of

  20. Crystal growth of GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

    1984-01-01

    It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

  1. A model for proton-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

    1982-01-01

    A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

  2. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  3. Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

    NASA Astrophysics Data System (ADS)

    Yen, Ming Y.; Haas, T. W.

    1990-10-01

    We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

  4. Spectrophotometric calibration procedures to enable calibration-free measurements of seawater calcium carbonate saturation states.

    PubMed

    Cuyler, Erin E; Byrne, Robert H

    2018-08-22

    A simple protocol was developed to measure seawater calcium carbonate saturation states (Ω spec ) spectrophotometrically. Saturation states are typically derived from the separate measurement of two other carbon system parameters, with each requiring unique instrumentation and often complex measurement protocols. Using the new protocol, the only required equipment is a thermostatted laboratory spectrophotometer. For each seawater sample, spectrophotometric measurements of pH (visible absorbance) are made in paired optical cells, one with and one without added nitric acid. Ultraviolet absorbance is measured to determine the amount of added acid based on the direct proportionality between nitrate concentration and UV absorbance. Coupled measurements of pH and the alkalinity change that accompanies the nitric acid addition allow calculation of a seawater sample's original carbonate ion concentration and saturation state. These paired absorbance measurements yield Ω spec (and other carbonate system parameters), with each sample requiring about 12 min processing time. Initially, an instrument-specific nitrate molar absorptivity coefficient must be determined (due to small but significant discrepancies in instrumental wavelength calibrations), but thereafter no further calibration is needed. In this work, the 1σ precision of replicate measurements of aragonite saturation state was found to be 0.020, and the average difference between Ω spec and Ω calculated conventionally from measured total alkalinity and pH (Ω calc ) was -0.11% ± 0.96% (a level of accuracy comparable to that obtained from spectrophotometric measurements of carbonate ion concentration). Over the entire range of experimental conditions, 0.97 < Ω < 3.17 (n = 125), all measurements attained the Global Ocean Acidification Observing Network's "weather level" goal for accuracy and 90% attained the more stringent "climate level" goal. When Ω spec was calculated from averages of duplicate

  5. DFT algorithms for bit-serial GaAs array processor architectures

    NASA Technical Reports Server (NTRS)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  6. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

  7. High-efficiency, radiation-resistant GaAs space cells

    NASA Technical Reports Server (NTRS)

    Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

    1991-01-01

    Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

  8. Influence of GaAs substrate properties on the congruent evaporation temperature

    NASA Astrophysics Data System (ADS)

    Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

    2018-03-01

    High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

  9. Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

    NASA Astrophysics Data System (ADS)

    Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

    2017-07-01

    We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

  10. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

    PubMed Central

    Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

    2007-01-01

    The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

  11. GaAs quantum dots in a GaP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

    2018-03-01

    We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

  12. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  13. Investigation of high efficiency GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

    1989-01-01

    Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

  14. Response of GaAs charge storage devices to transient ionizing radiation

    NASA Astrophysics Data System (ADS)

    Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

    Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

  15. Enhancement of conductance of GaAs sub-microwires under external stimuli

    NASA Astrophysics Data System (ADS)

    Qu, Xianlin; Deng, Qingsong; Zheng, Kun

    2018-03-01

    Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

  16. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  17. Blueish green photoluminescence from nitrided GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Shimaoka, Goro; Udagawa, Takashi

    1999-04-01

    Optical and structural studies were made on the Si-doped (100)GaAs surfaces nitrided at a temperature between 650° and 750°C for 15 min in the flowing NH 3 gas. The wavelength of photoluminescence (PL) spectra were observed to be shortened from 820 nm of the GaAs nitrided at 650°C with increasing nitridation temperature. Blueish green PL with wavelengths of approx. 490 nm and 470 nm were emitted from the nitrided surfaces at 700° and 750°C, respectively. Results of AES and SIMS indicated that the surfaces are nitrided as GaAs 1- xN x, (0< x≤1) alloy layer, and the nitrided region also tended to increase as the temperature raised. High-resolution transmission electron microscopic (HRTEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) results showed that films peeled off from the nitrided surfaces consisted mainly of hexagonal, wurtzite-type gallium nitride (GaN) with stacking faults and microtwins.

  18. An 8 cm long holmium-doped fiber saturable absorber for Q-switched fiber laser generation at 2-μm region

    NASA Astrophysics Data System (ADS)

    Rahman, M. F. A.; Dhar, A.; Das, S.; Dutta, D.; Paul, M. C.; Rusdi, M. F. M.; Latiff, A. A.; Dimyati, K.; Harun, S. W.

    2018-07-01

    We demonstrate a Q-switched all-fiber laser operating at 2-μm region by adding a piece of 8 cm long holmium doped fiber (HDF) as a fiber saturable absorber (SA) in Thulium doped fiber laser (TDFL) ring cavity. Doping of Ho ions into yttria-alumina silica glass was done through conventional Modified Chemical Vapor Deposition (MCVD) technique in conjunction with solution doping process. The fabricated HDF has a linear absorption of 3 dB with a core diameter and a numerical aperture of 10 μm and 0.18, respectively. A self-started Q-switching operation begins at 418 mW pump level and continually dominant until 564 mW pump level. As the pump power increases, stable pulse train presence from 30.61 kHz to 38.89 kHz while the pulse width reduces from 3.18 μs to 2.27 μs. Both maximum output power and maximum peak power are obtained at 5.05 mW and 57.2 mW, respectively, while the maximum pulse energy is calculated to be 129 nJ. The signal-to-noise ratio (SNR) of the fundamental frequency is 50 dB. Our work may contribute to the discovery of stable, robust, and economic SA for pulse fiber laser generation at 2-μm region.

  19. GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

    DTIC Science & Technology

    2007-11-01

    front and back side processed, unintentionally doped bulk gallium -arsenic (GaAs) Schottky detectors and determined that GaAs detectors with a large...a few materials that fulfill these requirements are gallium -arsenic (GaAs) and cadmium-zinc-tellurium (CdZnTe or CZT). They are viable alternative...Whitehill, C.; Pospíšil, S.; Wilhem, I.; Doležal, Z.; Juergensen, H.; Heuken, M. Development of low-pressure vapour -phase epitaxial GaAs for medical imaging

  20. Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

    2006-06-01

    Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

  1. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  2. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  3. Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

    NASA Astrophysics Data System (ADS)

    Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

    2006-05-01

    Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

  4. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  5. Palm-top-size, 1.5 kW peak-power, and femtosecond (160 fs) diode-pumped mode-locked Yb+3:KY(WO4)2 solid-state laser with a semiconductor saturable absorber mirror.

    PubMed

    Yamazoe, Shogo; Katou, Masaki; Adachi, Takashi; Kasamatsu, Tadashi

    2010-03-01

    We report a palm-top-size femtosecond diode-pumped mode-locked Yb(+3):KY(WO(4))(2) solid-state laser with a semiconductor saturable absorber mirror utilizing soliton mode locking for shortening the cavity to 50 mm. An average output power of 680 mW and a pulse width of 162 fs were obtained at 1045 nm with a repetition rate of 2.8 GHz, which led to a peak power of 1.5 kW. Average power fluctuations of a modularized laser source were found to be +/-10% for the free-running 3000 h operation and +/-1% for the power-controlled 2000 h operation.

  6. The ZnSe(110) puzzle - Comparison with GaAs(110)

    NASA Technical Reports Server (NTRS)

    Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

    1984-01-01

    The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

  7. First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

    NASA Astrophysics Data System (ADS)

    Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

    2018-02-01

    In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

  8. Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  9. GaAs laser diode pumped Nd:YAG laser

    NASA Technical Reports Server (NTRS)

    Conant, L. C.; Reno, C. W.

    1974-01-01

    A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

  10. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  11. Nonlinear Saturable and Polarization-induced Absorption of Rhenium Disulfide

    PubMed Central

    Cui, Yudong; Lu, Feifei; Liu, Xueming

    2017-01-01

    Monolayer of transition metal dichalcogenides (TMDs), with lamellar structure as that of graphene, has attracted significant attentions in optoelectronics and photonics. Here, we focus on the optical absorption response of a new member TMDs, rhenium disulphide (ReS2) whose monolayer and bulk forms have the nearly identical band structures. The nonlinear saturable and polarization-induced absorption of ReS2 are investigated at near-infrared communication band beyond its bandgap. It is found that the ReS2-covered D-shaped fiber (RDF) displays the remarkable polarization-induced absorption, which indicates the different responses for transverse electric (TE) and transverse magnetic (TM) polarizations relative to ReS2 plane. Nonlinear saturable absorption of RDF exhibits the similar saturable fluence of several tens of μJ/cm2 and modulation depth of about 1% for ultrafast pulses with two orthogonal polarizations. RDF is utilized as a saturable absorber to achieve self-started mode-locking operation in an Er-doped fiber laser. The results broaden the operation wavelength of ReS2 from visible light to around 1550 nm, and numerous applications may benefit from the anisotropic and nonlinear absorption characteristics of ReS2, such as in-line optical polarizers, high-power pulsed lasers, and optical communication system. PMID:28053313

  12. Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

    PubMed Central

    2012-01-01

    We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail. PMID:23043754

  13. Compositionally Graded Absorber for Efficient and Stable Near‐Infrared‐Transparent Perovskite Solar Cells

    PubMed Central

    Pisoni, Stefano; Weiss, Thomas P.; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N.

    2018-01-01

    Abstract Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se2, CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long‐term heat/light soaking has not been demonstrated. In this study, a facile partial ion‐exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near‐infrared‐transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se2 bottom cell. Non‐encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion‐exchange to design graded perovskite solar cells with improved efficiency and stability. PMID:29593970

  14. Compositionally Graded Absorber for Efficient and Stable Near-Infrared-Transparent Perovskite Solar Cells.

    PubMed

    Fu, Fan; Pisoni, Stefano; Weiss, Thomas P; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N; Buecheler, Stephan

    2018-03-01

    Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se 2 , CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long-term heat/light soaking has not been demonstrated. In this study, a facile partial ion-exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near-infrared-transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se 2 bottom cell. Non-encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion-exchange to design graded perovskite solar cells with improved efficiency and stability.

  15. Modified energetics and growth kinetics on H-terminated GaAs (110)

    NASA Astrophysics Data System (ADS)

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

    2013-10-01

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  16. Surface segregation and the Al problem in GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

    2018-03-01

    Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

  17. Large Signal Modeling and Analysis of the GaAs MESFET.

    DTIC Science & Technology

    1986-07-09

    various dimensions and physical parameters. A powerful computer aided design system can be developed by automating the circuit element and parameter...circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly...34. -. ’ Abstract The purpose of this work is to develop a large signal signal lumped circuit model of the GaAs MESFET to aid In the designs of microwave MESFET

  18. Structural and electronic properties of isovalent boron atoms in GaAs

    NASA Astrophysics Data System (ADS)

    Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

    2018-04-01

    Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the <110 > directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

  19. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

    NASA Astrophysics Data System (ADS)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

    2017-10-01

    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  20. Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation

    NASA Astrophysics Data System (ADS)

    Alvarez, J.; Kleider, J.-P.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Mariucci, L.; Rubini, S.

    2011-08-01

    The electrical properties of untreated and hydrogen-irradiated GaAs1-xNx are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs1-xNx increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 °C of H-irradiated GaAs1-xNx restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs1-xNx (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here.

  1. Testing a GaAs cathode in SRF gun

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs,more » we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the

  2. Design of quantum efficiency measurement system for variable doping GaAs photocathode

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Yang, Kai; Liu, HongLin; Chang, Benkang

    2008-03-01

    To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. Through early research, we proved that variable doping structure is executable and practical, and has great potential. In order to optimize variable doping GaAs photocathode preparation techniques and study the variable doping theory deeply, a real-time quantum efficiency measurement system for GaAs Photocathode has been designed. The system uses FPGA (Field-programmable gate array) device, and high speed A/D converter to design a high signal noise ratio and high speed data acquisition card. ARM (Advanced RISC Machines) core processor s3c2410 and real-time embedded system are used to obtain and show measurement results. The measurement precision of photocurrent could reach 1nA, and measurement range of spectral response curve is within 400~1000nm. GaAs photocathode preparation process can be real-time monitored by using this system. This system could easily be added other functions to show the physic variation of photocathode during the preparation process more roundly in the future.

  3. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction

    PubMed Central

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-01-01

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potentially give some new insights into two-dimensional layered materials related photonics. PMID:25213108

  4. Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

    NASA Astrophysics Data System (ADS)

    Zytkiewicz, Z. R.; Dobosz, D.; Pawlowska, M.

    1999-05-01

    Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substrates by liquid phase epitaxy are reported. We show that by introducing Si, Sn or Te impurities to the Ga-As solution the vertical growth rate is reduced while the lateral growth rate is significantly enhanced, which leads to a growth habit modification. Furthermore, the impurity incorporation into the growing layer is different on the upper and side surfaces of the ELO, reflecting the fundamental differences between the lateral and vertical growth modes. This phenomenon can be applied for studying the temporal development of ELO layers.

  5. Electric field effects on the optical properties of buckled GaAs monolayer

    NASA Astrophysics Data System (ADS)

    Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.

    2018-04-01

    Buckled GaAs monolayer has a direct band gap semiconductor with energy gap of 1.31 eV in the absence of electric field. When we applied transverse electric field, the value of band gap decreases with increasing of electric field strength. In our previous work [1], it is observed that the buckled GaAs monolayer becomes metallic at 1.3 V/Å. In the present work, we investigate the optical properties such as photon energy-dependent dielectric functions, extinction coefficient, refractive index, absorption spectrum and reflectivity of buckled GaAs monolayer in the semiconducting phase i.e. absence of external electric field and metallic phase i.e. presence of external electric field using density functional theory.

  6. Nuclear spin warm up in bulk n -GaAs

    NASA Astrophysics Data System (ADS)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  7. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

  8. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

  9. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

  10. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

  11. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

  12. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  13. Interface dynamics and crystal phase switching in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M.

    2016-03-01

    Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

  14. Periodic annealing of radiation damage in GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

    1980-01-01

    Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

  15. Interface dynamics and crystal phase switching in GaAs nanowires.

    PubMed

    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A; Ross, Frances M

    2016-03-17

    Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

  16. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

  17. Disruption of Higher Order DNA Structures in Friedreich’s Ataxia (GAA)n Repeats by PNA or LNA Targeting

    PubMed Central

    Bergquist, Helen; Rocha, Cristina S. J.; Álvarez-Asencio, Rubén; Nguyen, Chi-Hung; Rutland, Mark. W.; Smith, C. I. Edvard; Good, Liam; Nielsen, Peter E.; Zain, Rula

    2016-01-01

    Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigenetic modifications. With the aim of interfering with higher order H-DNA (like) DNA structures within pathological (GAA)n expansions, we examined sequence-specific interaction of peptide nucleic acid (PNA) with (GAA)n repeats of different lengths (short: n=9, medium: n=75 or long: n=115) by chemical probing of triple helical and single stranded regions. We found that a triplex structure (H-DNA) forms at GAA repeats of different lengths; however, single stranded regions were not detected within the medium size pathological repeat, suggesting the presence of a more complex structure. Furthermore, (GAA)4-PNA binding of the repeat abolished all detectable triplex DNA structures, whereas (CTT)5-PNA did not. We present evidence that (GAA)4-PNA can invade the DNA at the repeat region by binding the DNA CTT strand, thereby preventing non-canonical-DNA formation, and that triplex invasion complexes by (CTT)5-PNA form at the GAA repeats. Locked nucleic acid (LNA) oligonucleotides also inhibited triplex formation at GAA repeat expansions, and atomic force microscopy analysis showed significant relaxation of plasmid morphology in the presence of GAA-LNA. Thus, by inhibiting disease related higher order DNA structures in the Frataxin gene, such PNA and LNA oligomers may have potential for discovery of drugs aiming at recovering Frataxin expression. PMID:27846236

  18. A comparison of GaAs and Si hybrid solar power systems

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Roberts, A. S., Jr.

    1977-01-01

    Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

  19. Basic mechanisms study for MIS solar cell structures on GaAs

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  20. Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2

    NASA Astrophysics Data System (ADS)

    Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

    2017-06-01

    Using ab initio calculations, a simple model for GaAs1-xNx vapor-phase epitaxy on (100) surface of GaAs was created. By studying As2 and H2 molecules adsorptions and As/N atom substitutions on (100) GaAs surfaces, we obtain a relative stability diagram of all stable surfaces under varying As2, H2, and N2 conditions. We previously proved that this model could describe the vapor-phase epitaxy of GaAs1-x Nx with simple, fully decomposed, precursors. In this paper, we show that in more complex reaction conditions using monomethylhydrazine (MMHy), and dimethylhydrazine (DMHy), it is still possible to use our model to obtain an accurate description of the temperature and pressure stability domains for each surfaces, linked to chemical beam epitaxy (CBE) growth conditions. Moreover, the different N-incorporation regimes observed experimentally at different temperature can be explain and predict by our model. The use of MMHy and DMHy precursors can also be rationalized. Our model should then help to better understand the conditions needed to obtain an high quality GaAs1-xNx using vapor-phase epitaxy.

  1. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    NASA Astrophysics Data System (ADS)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  2. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  3. Nitride surface passivation of GaAs nanowires: impact on surface state density.

    PubMed

    Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

    2015-01-14

    Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

  4. High purity low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

  5. Insertion of GaAs MMICs into EW systems

    NASA Astrophysics Data System (ADS)

    Schineller, E. R.; Pospishil, A.; Grzyb, J.

    1989-09-01

    Development activities on a microwave/mm-wave monolithic IC (MIMIC) program are described, as well as the methodology for inserting these GaAs IC chips into several EW systems. The generic EW chip set developed on the MIMIC program consists of 23 broadband chip types, including amplifiers, oscillators, mixers, switches, variable attenuators, power dividers, and power combiners. These chips are being designed for fabrication using the multifunction self-aligned gate process. The benefits from GaAs IC insertion are quantified by a comparison of hardware units fabricated with existing MIC and digital ECL technology and the same units manufactured with monolithic technology. It is found that major improvements in cost, reliability, size, weight, and performance can be realized. Examples illustrating the methodology for technology insertion are presented.

  6. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-20

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  7. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    NASA Astrophysics Data System (ADS)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  8. Radiation testing of GaAs on CRRES and LIPS experiment

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.; Masloski, K.

    1984-01-01

    The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

  9. Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)

    NASA Astrophysics Data System (ADS)

    McLean, A. B.; Terminello, L. J.; McFeely, F. R.

    1989-12-01

    The adsorption of atomic F on the cleaved GaAs(110) surface has been studied with use of high-resolution core-level photoelectron spectroscopy by exposing the GaAs(110) surfaces to XeF2, which adsorbs dissociatively, leaving atomic F behind. This surface reaction produces two chemically shifted components in the Ga 3d core-level emission which are attributed to an interfacial monofluoride and a stable trifluoride reaction product, respectively. The As 3d core level develops only one chemically shifted component and from its exposure-dependent behavior it is attributed to an interfacial monofluoride. Least-squares analysis of the core-level line shapes revealed that (i) the F bonds to both the anion and the cation , (ii) the GaF3 component (characteristic of strong interfacial reaction) and the surface core-level shifted component (characteristic of a well ordered, atomically clean surface) are present together over a relatively large range of XeF2 exposures, and (iii) it is the initial disruption of the GaAs(110) surface that is the rate-limiting step in this surface reaction. These results are compared with similar studies of Cl and O adsorption on GaAs(110).

  10. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

    PubMed

    Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

    2017-03-24

    Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

  11. Enhanced second-harmonic generation from resonant GaAs gratings.

    PubMed

    de Ceglia, D; D'Aguanno, G; Mattiucci, N; Vincenti, M A; Scalora, M

    2011-03-01

    We theoretically study second harmonic generation in nonlinear, GaAs gratings. We find large enhancement of conversion efficiency when the pump field excites the guided mode resonances of the grating. Under these circumstances the spectrum near the pump wavelength displays sharp resonances characterized by dramatic enhancements of local fields and favorable conditions for second-harmonic generation, even in regimes of strong linear absorption at the harmonic wavelength. In particular, in a GaAs grating pumped at 1064 nm, we predict second-harmonic conversion efficiencies approximately 5 orders of magnitude larger than conversion rates achievable in either bulk or etalon structures of the same material.

  12. Scanning microwave microscopy applied to semiconducting GaAs structures

    NASA Astrophysics Data System (ADS)

    Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

    2018-02-01

    A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

  13. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin

    2015-09-01

    A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smoothmore » GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.« less

  14. Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

    NASA Astrophysics Data System (ADS)

    Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

    1995-05-01

    Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

  15. Fermi level pinning at epitaxial Si on GaAs(100) interfaces

    NASA Astrophysics Data System (ADS)

    Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

    1991-12-01

    GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

  16. GaAs VLSI for aerospace electronics

    NASA Technical Reports Server (NTRS)

    Larue, G.; Chan, P.

    1990-01-01

    Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

  17. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  18. Covalent attachment of TAT peptides and thiolated alkyl molecules on GaAs surfaces.

    PubMed

    Cho, Youngnam; Ivanisevic, Albena

    2005-07-07

    Four TAT peptide fragments were used to functionalize GaAs surfaces by adsorption from solution. In addition, two well-studied alkylthiols, mercaptohexadecanoic acid (MHA) and 1-octadecanethiol (ODT) were utilized as references to understand the structure of the TAT peptide monolayer on GaAs. The different sequences of TAT peptides were employed in recognition experiments where a synthetic RNA sequence was tested to verify the specific interaction with the TAT peptide. The modified GaAs surfaces were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS). AFM studies were used to compare the surface roughness before and after functionalization. XPS allowed us to characterize the chemical composition of the GaAs surface and conclude that the monolayers composed of different sequences of peptides have similar surface chemistries. Finally, FT-IRRAS experiments enabled us to deduce that the TAT peptide monolayers have a fairly ordered and densely packed alkyl chain structure. The recognition experiments showed preferred interaction of the RNA sequence toward peptides with high arginine content.

  19. Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

    NASA Astrophysics Data System (ADS)

    Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

    SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

  20. Code Saturation Versus Meaning Saturation: How Many Interviews Are Enough?

    PubMed

    Hennink, Monique M; Kaiser, Bonnie N; Marconi, Vincent C

    2017-03-01

    Saturation is a core guiding principle to determine sample sizes in qualitative research, yet little methodological research exists on parameters that influence saturation. Our study compared two approaches to assessing saturation: code saturation and meaning saturation. We examined sample sizes needed to reach saturation in each approach, what saturation meant, and how to assess saturation. Examining 25 in-depth interviews, we found that code saturation was reached at nine interviews, whereby the range of thematic issues was identified. However, 16 to 24 interviews were needed to reach meaning saturation where we developed a richly textured understanding of issues. Thus, code saturation may indicate when researchers have "heard it all," but meaning saturation is needed to "understand it all." We used our results to develop parameters that influence saturation, which may be used to estimate sample sizes for qualitative research proposals or to document in publications the grounds on which saturation was achieved.

  1. Accelerated GaAs growth through MOVPE for low-cost PV applications

    NASA Astrophysics Data System (ADS)

    Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

    2018-05-01

    The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

  2. Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

    NASA Astrophysics Data System (ADS)

    Elsayed, M.; Krause-Rehberg, R.; Korff, B.; Ratschinski, I.; Leipner, H. S.

    2013-08-01

    Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450-850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 1016 - 1017 cm-3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is VGaVAs-2CuGa.

  3. Aging behavior of Au-based ohmic contacts to GaAs

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.

    1989-01-01

    Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

  4. Aging behavior of Au-based ohmic contacts to GaAs

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.

    1988-01-01

    Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

  5. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  6. Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

    DTIC Science & Technology

    1987-08-15

    SUPPLEMENTARY NOTATION 17. COSATI CODES 18 SUBJECT TERMS (Corinue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Epitaxy GaAs 9...Zr leiK m I141’ FIGURES 1 . Effect of Growth Parameters on Residual Doping Type ................... 7 2. Photoluminescence Spectrum of a GaAs Epilayer... 1 3 Successful homoepitaxial growth of high purity, unintentionally doped GaAs epilayers by organometallic chemical vapor deposition (OMCVD) has

  7. /III-V semiconductor broadband distributed Bragg reflectors for long-wavelength VCSEL and SESAM devices

    NASA Astrophysics Data System (ADS)

    Koeninger, Anna; Boehm, Gerhard; Meyer, Ralf; Amann, Markus-Christian

    2014-12-01

    Semiconductor devices such as vertical-cavity surface-emitting lasers (VCSELs) or semiconductor-saturable absorber mirrors (SESAMs) require high-reflection mirrors. Moreover, in VCSELs, it is beneficial to have a crystalline mirror, which is as thin as possible in order to ensure a high thermal conductivity for efficient heat-sinking of the laser. On the other hand, the wavelength tuning range of a SESAM is limited by the reflection bandwidth of its distributed Bragg reflector (DBR). Thus, broadband mirrors are preferable here. This paper reports a three-pair DBR grown by molecular beam epitaxy (MBE) using BaCaF2 and GaAs on a GaAs (100) substrate. Due to the high ratio in refractive indices of GaAs and the group-IIa-fluorides, high-reflectivity mirrors and wide bandwidths can be obtained with low total thicknesses. We also investigated growth and stability of the material BaCaF2, as well as its thermal conductivity both as single layer and Bragg reflector. Observed peeling of the layers could be avoided by implementing a fluorine treatment previous to the BaCaF2 growth.

  8. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

  9. Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2013-09-01

    GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, and 1.55 μm which are transmission windows of optical fibers. In this paper, we present the photoluminescence at 1.30 μm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 μm emission is from transitions between the VAs-donor and X-acceptor pairs.

  10. Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

    PubMed

    Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

    2012-07-01

    Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

  11. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  12. Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

    NASA Astrophysics Data System (ADS)

    Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

    2015-03-01

    We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

  13. Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

    PubMed Central

    Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

  14. Negative differential velocity in ultradilute GaAs1-xNx alloys

    NASA Astrophysics Data System (ADS)

    Vogiatzis, N.; Rorison, J. M.

    2011-04-01

    We present theoretical results on steady state characteristics in bulk GaAs1-xNx alloys (x ≤ 0.2) using the single electron Monte-Carlo method. Two approaches have been used; the first assumes a GaAs band with a strong nitrogen scattering resonance and the second uses the band anti-crossing model, in which the localized N level interacts with the GaAs band strongly perturbing the conduction band. In the first model we observe two negative differential velocity peaks, the lower one associated with nitrogen scattering while the higher one with polar optical phonon emission accounting for the nonparabolicity effect. In the second model one negative differential velocity peak is observed associated with polar optical phonon emission. Good agreement with experimental low field mobility is obtained from the first model. We also comment on the results from both Models when the intervalley Г → L transfer is accounted for.

  15. Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

  16. Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

    NASA Astrophysics Data System (ADS)

    Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

    2015-12-01

    GaAs(100) c(4×4) surfaces were examined by ab initio calculations, under As2, H2 and N2 gas mixed conditions as a model for GaAs1-xNx vapor-phase epitaxy (VPE) on GaAs(100). Using a simple model consisting of As2 and H2 molecules adsorptions and As/N atom substitutions, it was shown to be possible to examine the crystal growth behavior considering the relative stability of the resulting surfaces against the chemical potential of As2, H2 and N2 gases. Such simple model allows us to draw a picture of the temperature and pressure stability domains for each surfaces that can be linked to specific growth conditions, directly. We found that, using this simple model, it is possible to explain the different N-incorporation regimes observed experimentally at different temperatures, and to predict the transition temperature between these regimes. Additionally, a rational explanation of N-incorporation ratio for each of these regimes is provided. Our model should then lead to a better comprehension and control of the experimental conditions needed to realize a high quality VPE of GaAs1-xNx.

  17. Terahertz pulse induced intervalley scattering in photoexcited GaAs.

    PubMed

    Su, F H; Blanchard, F; Sharma, G; Razzari, L; Ayesheshim, A; Cocker, T L; Titova, L V; Ozaki, T; Kieffer, J-C; Morandotti, R; Reid, M; Hegmann, F A

    2009-06-08

    Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.

  18. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1989-01-01

    The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

  19. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    PubMed

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  20. A Co2+-doped alumina-rich Mg0.4Al2.4O4 spinel crystal as saturable absorber for a LD pumped Er: glass microchip laser at 1535 nm

    NASA Astrophysics Data System (ADS)

    Jiang, D. P.; Zou, Y. Q.; Su, L. B.; Tang, H. L.; Wu, F.; Zheng, L. H.; Li, H. J.; Xu, J.

    2011-05-01

    Co2+-doped Mg0.4Al2.4O4 single crystal up to varnothing28×40 mm3 was successfully grown by the Czochralski method. By using this crystal as saturable absorber, we have demonstrated a diode-end-pumped passively Q-switched Er:glass microchip laser operating at 1535 nm for the first time to the best of our knowledge. The dependences of average output power, repetition rate and pulse energy on the incident pump power were investigated. In the passive Q-switching regime, a maximum average output power of 22.12 mW was obtained at the incident pump power of 410 mW. The narrowest pulse width, the largest pulse energy and the highest peak power were obtained to be about 3.5 ns, 4.8 μJ, and 1.37 kW, respectively.

  1. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

    NASA Astrophysics Data System (ADS)

    Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

    2014-12-01

    High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

  2. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

  3. In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

    NASA Technical Reports Server (NTRS)

    Yao, Huade; Snyder, Paul G.

    1991-01-01

    A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

  4. Experimental investigation of millimeter-wave GaAs TED oscillators cooled to cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Rydberg, Anders; Kollberg, Erik

    1988-03-01

    The output power and operating (bias) point for 80-100-GHz GaAs TED oscillators have been investigated for temperatures between 300 and 40 K. It is shown experimentally that the power can be increased by as much as nearly four times by cooling the oscillator. The thermal design of the oscillator was studied for GaAs and InP TED oscillators.

  5. Single crystal and polycrystalline GaAs solar cells using AMOS technology

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1976-01-01

    A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

  6. Development of an oxygen saturation measuring system by using near-infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Kono, K.; Nakamachi, E.; Morita, Y.

    2017-08-01

    Recently, the hypoxia imaging has been recognized as the advanced technique to detect cancers because of a strong relationship with the biological characterization of cancer. In previous studies, hypoxia imaging systems for endoscopic diagnosis have been developed. However, these imaging technologies using the visible light can observe only blood vessels in gastric mucous membrane. Therefore, they could not detect scirrhous gastric cancer which accounts for 10% of all gastric cancers and spreads rapidly into submucous membrane. To overcome this problem, we developed a measuring system of blood oxygen saturation in submucous membrane by using near-infrared (NIR) spectroscopy. NIR, which has high permeability for bio-tissues and high absorbency for hemoglobin, can image and observe blood vessels in submucous membrane. NIR system with LED lights and a CCD camera module was developed to image blood vessels. We measured blood oxygen saturation using the optical density ratio (ODR) of two wavelengths, based on Lambert-Beer law. To image blood vessel clearly and measure blood oxygen saturation accurately, we searched two optimum wavelengths by using a multilayer human gastric-like phantom which has same optical properties as human gastric one. By using Monte Carlo simulation of light propagation, we derived the relationship between the ODR and blood oxygen saturation and elucidated the influence of blood vessel depth on measuring blood oxygen saturation. The oxygen saturation measuring methodology was validated with experiments using our NIR system. Finally, it was confirmed that our system can detect oxygen saturation in various depth blood vessels accurately.

  7. Formation and photoluminescence of GaAs1-xNx dilute nitride achieved by N-implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2014-07-01

    In this paper, we present the fabrication of dilute nitride semiconductor GaAs1-xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1 = 0.38% and ximp2 = 0.76%. The GaAs1-xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs1-xNx samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1 = 0.38% and ximp2 = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.

  8. Wafer-Fused Orientation-Patterned GaAs

    DTIC Science & Technology

    2008-02-13

    frequencies utilizing existing industrial foundries. 15. SUBJECT TERMS Orientation-patterned Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase... Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase-matching, nonlinear frequency conversion 1. INTRODUCTION Quasi-phase-matching (QPM)1...and E. Lallier, “Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

  9. High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

    2015-09-28

    InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

  10. Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

    PubMed

    Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

    2004-11-15

    The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

  11. High-efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1979-01-01

    GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

  12. Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

    NASA Astrophysics Data System (ADS)

    Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

    2017-12-01

    We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

  13. Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

    DOE PAGES

    Perl, E. E.; Kuciauskas, D.; Simon, J.; ...

    2017-12-21

    We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

  14. Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Perl, E. E.; Kuciauskas, D.; Simon, J.

    We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

  15. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  16. Passively Q-switched Nd3+ solid-state lasers with antimonene as saturable absorber.

    PubMed

    Wang, Mengixa; Zhang, Fang; Wang, Zhengping; Wu, Zhixin; Xu, Xinguang

    2018-02-19

    Based on the saturable absorption feature of a two-dimensional (2D) nano-material, antimonene, the passively Q-switched operation for solid-state laser was realized for the first time. For the 946 and 1064 nm laser emissions of the Nd:YAG crystal, the Q-switched pulse widths were 209 and 129 ns, and the peak powers were 1.48, 1.77 W, respectively. For the 1342 nm laser emission of the Nd:YVO 4 crystal, the Q-switched pulse width was 48 ns, giving a peak power of 28.17 W. Our research shows that antimonene can be used as a stable, broadband optical modulating device for a solid-state laser, which will be particularly effective for long wavelength operation.

  17. Magnetic graphene enabled tunable microwave absorber via thermal control.

    PubMed

    Quan, L; Qin, F X; Li, Y H; Estevez, D; Fu, G J; Wang, H; Peng, H-X

    2018-06-15

    By synthesizing nitrogen-doped graphene (NG) via a facile thermal annealing method, a fine control of the amount and location of doped nitrogen as well as the oxygen-containing functional groups is achieved with varying annealing temperature. The favorable magnetic properties have been achieved for N-doped rGO samples obtained at two temperatures of all NG samples, i.e., 500 °C and 900 °C with saturation magnetization of 0.63 emu g -1 and 0.67 emu g -1 at 2 K, respectively. This is attributed to the optimized competition of the N-doping and reduction process at 500 °C and the dominated reduction process at 900 °C. NG obtained at 300 °C affords the best overall absorbing performance: when the absorber thickness is 3.0 mm, the maximum absorption was -24.6 dB at 8.51 GHz, and the absorption bandwidth was 4.89 GHz (7.55-12.44 GHz) below -10 dB. It owes its large absorbing intensity to the good impedance match and significant dielectric loss. The broad absorption bandwidth benefits from local fluctuations of dielectric responses contributed by competing mechanisms. Despite the significant contribution from materials loss to the absorption, the one quarter-wavelength model is found to be responsible for the reflection loss peak positions. Of particular significance is that an appropriate set of electromagnetic parameters associated with reasonable reduction is readily accessible by convenient control of annealing temperature to modulate the microwave absorbing features of graphene. Thus, NG prepared by thermal annealing promises to be a highly efficient microwave absorbent.

  18. Magnetic graphene enabled tunable microwave absorber via thermal control

    NASA Astrophysics Data System (ADS)

    Quan, L.; Qin, F. X.; Li, Y. H.; Estevez, D.; Fu, G. J.; Wang, H.; Peng, H.-X.

    2018-06-01

    By synthesizing nitrogen-doped graphene (NG) via a facile thermal annealing method, a fine control of the amount and location of doped nitrogen as well as the oxygen-containing functional groups is achieved with varying annealing temperature. The favorable magnetic properties have been achieved for N-doped rGO samples obtained at two temperatures of all NG samples, i.e., 500 °C and 900 °C with saturation magnetization of 0.63 emu g‑1 and 0.67 emu g‑1 at 2 K, respectively. This is attributed to the optimized competition of the N-doping and reduction process at 500 °C and the dominated reduction process at 900 °C. NG obtained at 300 °C affords the best overall absorbing performance: when the absorber thickness is 3.0 mm, the maximum absorption was ‑24.6 dB at 8.51 GHz, and the absorption bandwidth was 4.89 GHz (7.55–12.44 GHz) below ‑10 dB. It owes its large absorbing intensity to the good impedance match and significant dielectric loss. The broad absorption bandwidth benefits from local fluctuations of dielectric responses contributed by competing mechanisms. Despite the significant contribution from materials loss to the absorption, the one quarter-wavelength model is found to be responsible for the reflection loss peak positions. Of particular significance is that an appropriate set of electromagnetic parameters associated with reasonable reduction is readily accessible by convenient control of annealing temperature to modulate the microwave absorbing features of graphene. Thus, NG prepared by thermal annealing promises to be a highly efficient microwave absorbent.

  19. Spectrally resolved localized states in GaAs 1– xBi x

    DOE PAGES

    Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; ...

    2017-02-01

    In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs 1-xBi x. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs 1-xBi x. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localizedmore » holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs 1-xBi x alloys.« less

  20. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes,more » which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.« less

  1. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  2. Polariton condensation with saturable molecules dressed by vibrational modes

    DOE PAGES

    Cwik, Justyna A.; Reja, Sahinur; Littlewood, Peter B.; ...

    2014-02-01

    Here, polaritons, mixed light-matter quasiparticles, undergo a transition to a condensed, macroscopically coherent state at low temperatures or high densities. Recent experiments show that coupling light to organic molecules inside a microcavity allows condensation at room temperature. The molecules act as saturable absorbers with transitions dressed by molecular vibrational modes. Motivated by this, we calculate the phase diagram and spectrum of a modified Tavis-Cummings model, describing vibrationally dressed two-level systems, coupled to a cavity mode. Coupling to vibrational modes can induce re-entrance, i.e. a normal-condensed-normal sequence with decreasing temperature and can drive the transition first-order.

  3. Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

    NASA Astrophysics Data System (ADS)

    Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

    We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

  4. The 20 GHz power GaAs FET development

    NASA Technical Reports Server (NTRS)

    Crandell, M.

    1986-01-01

    The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

  5. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  6. Q-switched erbium doped fiber laser based on single and multiple walled carbon nanotubes embedded in polyethylene oxide film as saturable absorber

    NASA Astrophysics Data System (ADS)

    Ahmed, M. H. M.; Ali, N. M.; Salleh, Z. S.; Rahman, A. A.; Harun, S. W.; Manaf, M.; Arof, H.

    2015-01-01

    A passive, stable and low cost Q-switched Erbium-doped fiber laser (EDFL) is demonstrated using both single-walled carbon nanotubes (SWCNTs) and multi-walled carbon nanotubes (MWCNTs), which are embedded in polyethylene oxide (PEO) film as a saturable absorber (SA). The film is sandwiched between two FC/PC fiber connectors and integrated into the laser cavity for Q-switching pulse generation operating at wavelength of 1533.6 nm. With SWCNTs, the laser produces a stable pulse train with repetition rate and pulse width ranging from 9.52 to 33.33 kHz and 16.8 to 8.0 μs while varying the 980 nm pump power from 48.5 mW to 100.4 mW. On the other hand, with MWCNTs, the repetition rate and pulse width can be tuned in a wider range of 6.12-33.62 kHz and 9.5- 4.2 μs, respectively as the pump power increases from 37.9 to 120.6 mW. The MWCNTs produce the pulse train at a lower threshold and attain a higher repetition rate compared to the SWCNTs. This is due to thicker carbon nanotubes layer of the MWCNTs which provides more absorption and consequently higher damage threshold. The Q-switched EDFL produces the highest pulse energy of 531 nJ at pump power of 37.9 mW with the use of MWCNTs-PEO SA.

  7. GaAs nanowire array solar cells with axial p-i-n junctions.

    PubMed

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  8. Elastomeric nanoparticle composites covalently bound to Al2O3/GaAs surfaces.

    PubMed

    Song, Hyon Min; Ye, Peide D; Ivanisevic, Albena

    2007-08-28

    This article reports the modification of Al2O3/GaAs surfaces with multifunctional soft materials. Siloxane elastomers were covalently bound to dopamine-modified Al2O3/GaAs semiconductor surfaces using MPt (M = Fe, Ni) nanoparticles. The sizes of the monodisperse FePt and NiPt nanoparticles were less than 5 nm. The surfaces of the nanoparticles as well as the Al2O3/GaAs substrates were modified with allyl-functionalized dopamine that utilized a dihydroxy group as a strong ligand. The immobilization of the elastomers was performed via a hydrosilation reaction of the allyl-functionalized dopamines with the siloxane backbones. X-ray photoelectron spectroscopy (XPS) experiments confirmed the covalent bonding of the siloxane elastomers to the oxide layer on the semiconductor surface. Fourier transform-infrared reflection absorption spectroscopy (FT-IRRAS) measurements revealed that the allyl functional groups are bonded to the siloxane backbones. The FT-IRRAS data also showed that the density of the allyl groups on the surface was lower than that of the siloxane backbones. The mechanical properties of the surface-bound nanocomposites were tested using nanoindentation experiments. The nanoindentation data showed that the soft matrix composed of the elastomeric coating on the surfaces behaves differently from the inner, hard Al2O3/GaAs substrate.

  9. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  10. Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Morioka, N.; Mori, S.

    2014-02-07

    The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. Themore » relationship between effective mass and bulk band structure is discussed.« less

  11. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  12. Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

    2003-01-01

    In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

  13. Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Springer, C.; Resch-Esser, U.; Goletti, C.; Richter, W.; Fimland, B. O.

    1997-04-01

    The growth of thin indium-layers on the GaAs(100) As-rich {(2 × 4)}/{c(2 × 8) } surface has been investigated by reflectance anisotropy spectroscopy (RAS), LEED and AES. Clean surfaces of the {(2 × 4)}/{c(2 × 8) } reconstruction were prepared in UHV by thermal desorption of a protective arsenic layer deposited on homoepitaxially grown MBE layers. Room temperature deposition of indium on the {(2 × 4)}/{c(2 × 8) } surface and subsequent annealing at 450°C leads to a 90° rotation of symmetry in the LEED pattern at a threshold coverage of 0.5 monolayers, i.e. a change from the {(2 × 4)}/{c(2 × 8) } to the {(4 × 2)}/{c(8 × 2) } reconstruction. The RAS spectra show the evolution of a distinct negative feature at 1.8 eV, that shifts to 2.1 eV after annealing, corresponding to optical transitions attributed to In-dimers orientated along the [011]-direction. AES analysis shows a change in growth mode beyond 0.5 ML indicating saturation of all available adsorption sites at this coverage and RAS spectra show a contribution from additional disordered In. The AES spectra display no evidence of a surface exchange reaction between gallium and arsenic atoms, thus indicating a surface termination by In-dimers adsorbed on a layer of As.

  14. Microwave absorbance properties of zirconium–manganese substituted cobalt nanoferrite as electromagnetic (EM) wave absorbers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khan, Kishwar, E-mail: kknano@hotmail.com; Rehman, Sarish

    2014-02-01

    Highlights: • Good candidates for EM materials with low reflectivity. • Good candidates for broad bandwidth at microwave frequency. • Microwave absorbing bandwidth was modulated simply by manipulating the Zr–Mn. • Higher the Zr–Mn content, the higher absorption rates for the electromagnetic radiation. • The predicted reflection loss shows that this can be used for thin ferrite absorber. - Abstract: Nanocrystalline Zr–Mn (x) substituted Co ferrite having chemical formula CoFe{sub 2−2x}Zr{sub x}Mn{sub x}O{sub 4} (x = 0.1–0.4) was prepared by co-precipitation technique. Combining properties such as structural, electrical, magnetic and reflection loss characteristics. Crystal structure and surface morphology of themore » calcined samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). By using two point probe homemade resistivity apparatus to find resistivity of the sample. Electromagnetic (EM) properties are measured through RF impedance/materials analyzer over 1 MHz–3 GHz. The room-temperature dielectric measurements show dispersion behavior with increasing frequency from 100 Hz to 3 MHz. Magnetic properties confirmed relatively strong dependence of saturation magnetization on Zr–Mn composition. Curie temperature is also found to decrease linearly with addition of Zr–Mn. Furthermore, comprehensive analysis of microwave reflection loss (RL) is carried out as a function of substitution, frequency, and thickness. Composition accompanying maximum microwave absorption is suggested.« less

  15. New dynamic FET logic and serial memory circuits for VLSI GaAs technology

    NASA Technical Reports Server (NTRS)

    Eldin, A. G.

    1991-01-01

    The complexity of GaAs field effect transistor (FET) very large scale integration (VLSI) circuits is limited by the maximum power dissipation while the uniformity of the device parameters determines the functional yield. In this work, digital GaAs FET circuits are presented that eliminate the DC power dissipation and reduce the area to 50% of that of the conventional static circuits. Its larger tolerance to device parameter variations results in higher functional yield.

  16. Photoreflectance from GaAs and GaAs/GaAs interfaces

    NASA Astrophysics Data System (ADS)

    Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

    1989-10-01

    Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

  17. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

    NASA Astrophysics Data System (ADS)

    Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2018-04-01

    In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

  18. Gallium arsenide (GaAs) power conversion concept

    NASA Technical Reports Server (NTRS)

    Nussberger, A. A.

    1980-01-01

    A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

  19. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

    PubMed

    Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

    2010-05-20

    Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

  20. Imaging performance of a Timepix detector based on semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

    2018-01-01

    This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

  1. Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] in the Turkish population.

    PubMed

    Atalay, Ayfer; Koyuncu, Hasan; Köseler, Aylin; Ozkan, Anzel; Atalay, Erol O

    2007-01-01

    Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] is a rare variant first reported in Yugoslavia and then in Turkey, Australia and New Zealand. We report two further unrelated cases from Turkey. The importance of identifying Hb Beograd at the molecular level, especially in regions where Hb D-Los Angeles [beta121(GH4)Glu-->Gln, GAA-->CAA] is prevalent, is emphasized.

  2. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bruhn, Thomas; Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str.9, 12489 Berlin; Fimland, Bjørn-Ove

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. Onmore » the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.« less

  3. Thermal stress cycling of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    1985-01-01

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  4. Sn nanothreads in GaAs: experiment and simulation

    NASA Astrophysics Data System (ADS)

    Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2016-12-01

    The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

  5. Monolithic GaAs dual-gate FET phase shifter

    NASA Astrophysics Data System (ADS)

    Kumar, M.; Subbarao, S. N.; Menna, R.

    1981-09-01

    The objective of this program is to develop a monolithic GaAs dual-gate FET phase shifter, operating over the 4- to 8-GHz frequency band and capable of a continuously programmable phase shift from 0 deg through N times 360 deg where N is an integer. The phase shift is to be controllable to within +3 deg. This phase shifter will be capable of delivering an output power up to 0 dBm with an input and output VSWR of less than 1.5:1. Progress 1: The photomask of a 0 to 90 deg monolithic GaAs dual-gate FET phase shifter has been procured, and we are in the process of fabricating the phase shifter. 2: We have designed and fabricated a 50 ohm, 4-line interdigitated coupler. Also, we have designed and fabricated a 25-ohm, 6-line interdigitated coupler. The performance of both couplers agrees quite well with the theoretical results. Technical Problems: there was no major problem during this period.

  6. 28 percent efficient GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

    1988-01-01

    AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

  7. Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

    NASA Technical Reports Server (NTRS)

    Leon, Rosa P.; Piszczor, Michael F., Jr.

    1985-01-01

    The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

  8. Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

    NASA Technical Reports Server (NTRS)

    Campbell, L.; Purviance, J.

    1992-01-01

    A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

  9. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  10. Low temperature growth and electrical characterization of insulators for GaAs MISFETS

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1981-01-01

    Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

  11. Photoluminescence Study of N-Type Thermal Conversion in Semi-Insulating GaAs.

    DTIC Science & Technology

    1982-12-01

    free electron to the crystal. For example, in GaAs, a tellurium atom on an arsenic site (TeAs) or a silicon atom on a gallium site (SiGa) are donor atoms...Photoconductivity Photoluminescenc Silicon, SiGa 5.81 6.80 Germanium, GeGa 6.08 Sulfur, SAs 6.10 Selenium, SeAs 5.89 6.10 Tellurium , TeAs When an electron...34 to the neutral donor or acceptor (Ref 16:15). The following excitonic com- plexes have been observed in GaAs: (i) exciton bound to a neutron donor at

  12. Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

    PubMed

    Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

    2012-06-01

    The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

  13. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

    PubMed

    Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

    2017-03-01

    We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

  14. GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

    NASA Astrophysics Data System (ADS)

    Rozahun, Ilmira; Bahti, Tohtiaji; He, Guijie; Ghupur, Yasenjan; Ablat, Abduleziz; Mamat, Mamatrishat

    2018-05-01

    Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAs) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs monolayer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices.

  15. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  16. Comparative research on activation technique for GaAs photocathodes

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

    2012-03-01

    The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

  17. Displacement damage and predicted non-ionizing energy loss in GaAs

    NASA Astrophysics Data System (ADS)

    Gao, Fei; Chen, Nanjun; Hernandez-Rivera, Efrain; Huang, Danhong; LeVan, Paul D.

    2017-03-01

    Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been applied to study the defect production for lattice atom recoil energies from 500 eV to 20 keV in gallium arsenide (GaAs). At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters. However, a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies larger than 2 keV. The results reveal a non-linear defect production that increases with the PKA energy. The damage density within a cascade core is evaluated, and used to develop a model that describes a new energy partition function. Based on the MD results, we have developed a model to determine the non-ionizing energy loss (NIEL) in GaAs, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The calculated NIEL predictions are compared with the available data, thus validating the NIEL model developed in this study.

  18. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  19. First results from GaAs double-sided detectors

    NASA Astrophysics Data System (ADS)

    Beaumont, S. P.; Bertin, R.; Booth, C. N.; Buttar, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F. H.; D'Auria, S.; del Papa, C.; Dogru, M.; Edwards, M.; Foster, F.; Francescato, A.; Gowdy, S.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B. K.; Lynch, J. G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P. G.; Raine, C.; Santana, J.; Saunders, I. J.; Seller, P. H.; Shankar, K.; Sharp, P. H.; Skillicorn, I. O.; Sloan, T.; Smith, K. M.; ten Have, I.; Turnbull, R. M.; Vanni, U.; Zichichi, A.

    1994-09-01

    Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10 14 neutrons cm -2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

  20. Solvent dependence of the steady-state rate of 1O 2 generation upon excitation of dissolved oxygen by cw 1267 nm laser radiation in air-saturated solutions: Estimates of the absorbance and molar absorption coefficients of oxygen at the excitation wavelength

    NASA Astrophysics Data System (ADS)

    Krasnovsky, A. A., Jr.; Roumbal, Ya. V.; Ivanov, A. V.; Ambartzumian, R. V.

    2006-10-01

    The rates of oxygenation of the 1O 2 trap, 1,3-diphenylisobenzofuran were measured in air-saturated organic solvents and heterogeneous D 2O-sodium dodecyl sulfate dispersions upon infrared (1267 ± 4 nm) laser irradiation. The absorbance and molar absorption coefficients of oxygen corresponding to this wavelength were estimated from the observed oxygenation rates. The data suggest that 1O 2 was formed due to direct oxygen excitation without appreciable involvement of vibrationally excited solvent molecules. The minor 'pseudophase' of detergent micelles was shown to strongly enhance overall 1O 2 production in D 2O-detergent dispersions.

  1. Saturated fat (image)

    MedlinePlus

    ... saturated fats. Vegetable sources of saturated fat include coconut and palm oils. When looking at a food ... saturated fats. Vegetable sources of saturated fat include coconut and palm oils. When looking at a food ...

  2. Expanded GAA repeats impair FXN gene expression and reposition the FXN locus to the nuclear lamina in single cells.

    PubMed

    Silva, Ana M; Brown, Jill M; Buckle, Veronica J; Wade-Martins, Richard; Lufino, Michele M P

    2015-06-15

    Abnormally expanded DNA repeats are associated with several neurodegenerative diseases. In Friedreich's ataxia (FRDA), expanded GAA repeats in intron 1 of the frataxin gene (FXN) reduce FXN mRNA levels in averaged cell samples through a poorly understood mechanism. By visualizing FXN expression and nuclear localization in single cells, we show that GAA-expanded repeats decrease the number of FXN mRNA molecules, slow transcription, and increase FXN localization at the nuclear lamina (NL). Restoring histone acetylation reverses NL positioning. Expanded GAA-FXN loci in FRDA patient cells show increased NL localization with increased silencing of alleles and reduced transcription from alleles positioned peripherally. We also demonstrate inefficiencies in transcription initiation and elongation from the expanded GAA-FXN locus at single-cell resolution. We suggest that repressive epigenetic modifications at the expanded GAA-FXN locus may lead to NL relocation, where further repression may occur. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  3. Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

    PubMed

    Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

    2017-06-01

    Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Temperature dependent GaAs MMIC radiation effects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Anderson, W.T.; Roussos, J.A.; Gerdes, J.

    1993-12-01

    The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

  5. Design and implementation of GaAs HBT circuits with ACME

    NASA Technical Reports Server (NTRS)

    Hutchings, Brad L.; Carter, Tony M.

    1993-01-01

    GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

  6. E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fluegel, B.; Mascarenhas, A.; Ptak, A. J.

    2007-01-01

    An above-band-gap transition E{sub +} is experimentally observed in the dilute GaAs{sub 1-x}Bi{sub x} alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E{sub +} that is observed in GaAs{sub 1-x}N{sub x}, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E{sub +} level observed in GaAs is not the isolated isoelectronic impurity level N{sub x}, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbationmore » of the conduction band L{sub 6}{sup c}.« less

  7. All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling.

    PubMed

    Lin, Yen-Chih; Mao, Ming-Hua; Lin, You-Ru; Lin, Hao-Hsiung; Lin, Che-An; Wang, Lon A

    2014-09-01

    We demonstrate ultrafast all-optical switching in GaAs microdisk resonators using a femtosecond pump-probe technique through tapered-fiber coupling. The temporal tuning of the resonant modes resulted from the refractive index change due to photoexcited carrier density variation inside the GaAs microdisk resonator. Transmission through the GaAs microdisk resonator can be modulated by more than 10 dB with a switching time window of 8 ps in the switch-off operation using pumping pulses with energies as low as 17.5 pJ. The carrier lifetime was fitted to be 42 ps, much shorter than that of the bulk GaAs, typically of the order of nanoseconds. The above observation indicates that the surface recombination plays an important role in increasing the switching speed.

  8. GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

    1984-01-01

    Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

  9. Dual-gate GaAs FET switches

    NASA Astrophysics Data System (ADS)

    Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

    1981-02-01

    A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

  10. Nonlinear optimal filter technique for analyzing energy depositions in TES sensors driven into saturation

    DOE PAGES

    Shank, B.; Yen, J. J.; Cabrera, B.; ...

    2014-11-04

    We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs) connected to quasiparticle (qp) traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search) Ge and Si detectors. We show that this improved model, together with a straightforward time-domain optimal filter, can be used to analyze pulses well into the nonlinear saturation region and reconstruct absorbed energies with optimal energy resolution.

  11. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to < 11\\bar{1}> . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  12. Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Buckley, Sonia, E-mail: bucklesm@stanford.edu; Radulaski, Marina; Vučković, Jelena

    2013-11-18

    We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

  13. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  14. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

  15. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  16. Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

    PubMed

    Tong, C Z; Yoon, S F

    2008-09-10

    We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

  17. Burst annealing of high temperature GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  18. Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

    PubMed

    Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

    2013-05-15

    The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

  19. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  20. Femtosecond coherent emission from GaAs bulk microcavities

    NASA Astrophysics Data System (ADS)

    Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

    1999-02-01

    The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

  1. Tunneling effect on double potential barriers GaAs and PbS

    NASA Astrophysics Data System (ADS)

    Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

    2018-04-01

    A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

  2. Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

    Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

  3. Developability assessment of clinical drug products with maximum absorbable doses.

    PubMed

    Ding, Xuan; Rose, John P; Van Gelder, Jan

    2012-05-10

    Maximum absorbable dose refers to the maximum amount of an orally administered drug that can be absorbed in the gastrointestinal tract. Maximum absorbable dose, or D(abs), has proved to be an important parameter for quantifying the absorption potential of drug candidates. The purpose of this work is to validate the use of D(abs) in a developability assessment context, and to establish appropriate protocol and interpretation criteria for this application. Three methods for calculating D(abs) were compared by assessing how well the methods predicted the absorption limit for a set of real clinical candidates. D(abs) was calculated for these clinical candidates by means of a simple equation and two computer simulation programs, GastroPlus and an program developed at Eli Lilly and Company. Results from single dose escalation studies in Phase I clinical trials were analyzed to identify the maximum absorbable doses for these compounds. Compared to the clinical results, the equation and both simulation programs provide conservative estimates of D(abs), but in general D(abs) from the computer simulations are more accurate, which may find obvious advantage for the simulations in developability assessment. Computer simulations also revealed the complex behavior associated with absorption saturation and suggested in most cases that the D(abs) limit is not likely to be achieved in a typical clinical dose range. On the basis of the validation findings, an approach is proposed for assessing absorption potential, and best practices are discussed for the use of D(abs) estimates to inform clinical formulation development strategies. Copyright © 2012 Elsevier B.V. All rights reserved.

  4. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  5. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

    NASA Astrophysics Data System (ADS)

    Fluegel, B.; Rice, A. D.; Mascarenhas, A.

    2018-05-01

    Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. The difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

  6. Diffraction studies of the high pressure phases of GaAs and GaP

    NASA Technical Reports Server (NTRS)

    Baublitz, M., Jr.; Ruoff, A. L.

    1982-01-01

    High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive X-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172 + or - 7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal beta-Sn type phase at 215 + or - 8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.

  7. Velocity surface measurements for ZnO films over /001/-cut GaAs

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

    1994-01-01

    A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

  8. Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

    2012-10-01

    The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

  9. Capless Annealing of Ion Implanted GaA.

    DTIC Science & Technology

    1980-12-01

    1967). 10. " Thermophysical Properties of Matter," edited by Y. S. Touloukian (Plenum, New York, 1977), v. 13. 11. J. F. Gibbons, W. S. Johnson and S. W...temperatures of 850 C. Using rf spark-source mass spectrometry, an As con- centration in excess of the equilibrium value of As over GaAs at the annealing...38 4.0 SUMMARY AND RECOMMENDATIONS ................... *.* ...... ..... 46 5.0 REFERENCES ..................... *.. o

  10. LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Clark, Eric B.; Ringel, Steven A.; Andre, Carrie L.; Smith, Mark A.; Scheiman, David A.; Jenkins, Phillip P.; Maurer, William F.; Fitzgerald, Eugene A.; Walters, R. J.

    2004-01-01

    Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

  11. Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

    PubMed

    Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

    2012-12-14

    GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.

  12. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  13. Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2×6) surface

    NASA Astrophysics Data System (ADS)

    Shimoda, M.; Tsukamoto, S.; Koguchi, N.

    1998-01-01

    Core-level X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) have been applied to investigate the sulfur-terminated GaAs(001)-(2×6) surface. No forward scattering peaks were found in the XPD pattern of S 2s emission, indicating that adsorbed S atoms form a single layer on the GaAs substrate. In accordance with the zincblende structure of GaAs, the AED patterns of Ga L 3M 45M 45 and As L 3M 45M 45 emission almost coincide with each other, if one of the emissions is rotated by 90° around the [001] direction. This fact suggests that the diffraction patterns mainly reflect the structure of the bulk GaAs crystal. In order to investigate the surface structure, AED patterns in large polar angles were analyzed with single scattering cluster (SSC) calculations. The best result was obtained with a model cluster where the S-S bond length was set at 0.28 nm, 30% shorter than the corresponding length of the ideal (1×1) structure, and the adsorption height was set at 0.12-0.13 nm, 10% shorter than the ideal interlayer distance of GaAs(001) planes. These values are in good agreement with the results of STM measurements. A modulation of the inter-dimer distance was also found, suggesting the existence of missing dimers.

  14. Optimization of conditions for thermal smoothing GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S.; Alperovich, V. L.

    2018-03-01

    GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing "coarse" relief features and the second stage focused on "fine" smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.

  15. Tunable Picosecond Laser Pulses via the Contrast of Two Reverse Saturable Absorption Phases in a Waveguide Platform

    PubMed Central

    Tan, Yang; Chen, Lianwei; Wang, Dong; Chen, Yanxue; Akhmadaliev, Shavkat; Zhou, Shengqiang; Hong, Minghui; Chen, Feng

    2016-01-01

    How to enhance the optical nonlinearity of saturable absorption materials is an important question to improve the functionality of various applications ranging from the high power laser to photonic computational devices. We demonstrate the saturable absorption (SA) of VO2 film attributed to the large difference of optical nonlinearities between the two states of the phase-transition materials (VO2). Such VO2 film demonstrated significantly improved performance with saturation intensity higher than other existing ultrathin saturable absorbers by 3 orders due to its unique nonlinear optical mechanisms in the ultrafast phase change process. Owing to this feature, a Q-switched pulsed laser was fabricated in a waveguide platform, which is the first time to achieve picosecond pulse duration and maintain high peak power. Furthermore, the emission of this VO2 waveguide laser can be flexibly switched between the continuous-wave (CW) and pulsed operation regimes by tuning the temperature of the VO2 film, which enables VO2-based miniature laser devices with unique and versatile functions. PMID:27188594

  16. Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

    NASA Technical Reports Server (NTRS)

    Ko, K. Y.; Lagowski, J.; Gatos, H. C.

    1989-01-01

    Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

  17. Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

    2007-05-01

    Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

  18. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fluegel, B.; Rice, A. D.; Mascarenhas, A.

    Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptormore » states in the presence of the midgap state EL2.« less

  19. GaAs and 3-5 compound solar cells status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.

    1984-01-01

    Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

  20. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C.

    1980-01-01

    With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

  1. Photoluminescence upconversion at GaAs /InGa P2 interfaces driven by a sequential two-photon absorption mechanism

    NASA Astrophysics Data System (ADS)

    Hylton, N. P.; Hinrichsen, T. F.; Vaquero-Stainer, A. R.; Yoshida, M.; Pusch, A.; Hopkinson, M.; Hess, O.; Phillips, C. C.; Ekins-Daukes, N. J.

    2016-06-01

    This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs /InGa P2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGa P2 material, arising from partial ordering of the InGa P2 . We also observed the excitation of a two-dimensional electron gas at the GaAs /InGa P2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron gas at the GaAs /InGa P2 interface, suggesting that charge accumulation at the interface can play a crucial role in the upconversion process.

  2. Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.

    PubMed

    Mariager, Simon O; Lauridsen, Søren L; Sørensen, Claus B; Dohn, Asmus; Willmott, Phillip R; Nygård, Jesper; Feidenhans'l, Robert

    2010-03-19

    GaAs nanowires were grown by molecular beam epitaxy and studied by glancing-angle x-ray diffraction during five different stages of the growth process. An entire forest of randomly positioned epitaxial nanowires was sampled simultaneously and a large variation in the Au-Ga catalyst was found. Au, AuGa, AuGa(2) and the hexagonal beta phase were all identified in several orientations and in similar amounts. The nanowires are shown to consist of regular zinc blende crystal, its twin and the hexagonal wurtzite. The evolution of the various Au-Ga catalysts and the development in the twin to the wurtzite abundance ratio indicate that the Au catalyst is saturated upon initiation of growth leading to an increased amount of wurtzite structure in the wires. A specular x-ray scan identifies the various Au-Ga alloys, three Au lattice constants and a rough interface between nanowires and catalyst. Reciprocal space maps were obtained around Au Bragg points and show the development of the Au catalyst from a distribution largely oriented with respect to the lattice to a non-uniform distribution with several well-defined lattice constants.

  3. Study of subband electronic structure of Si δ-doped GaAs using magnetotransport measurements in tilted magnetic fields

    NASA Astrophysics Data System (ADS)

    Li, G.; Hauser, N.; Jagadish, C.; Antoszewski, J.; Xu, W.

    1996-06-01

    Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle <30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed.

  4. The transcriptional activator GaaR of Aspergillus niger is required for release and utilization of d- galacturonic acid from pectin

    DOE PAGES

    Alazi, Ebru; Niu, Jing; Kowalczyk, Joanna E.; ...

    2016-05-13

    We identified the d-galacturonic acid (GA)-responsive transcriptional activator GaaR of the saprotrophic fungus, Aspergillus niger, which was found to be essential for growth on GA and polygalacturonic acid (PGA). Growth of the ΔgaaR strain was reduced on complex pectins. Genome-wide expression analysis showed that GaaR is required for the expression of genes necessary to release GA from PGA and more complex pectins, to transport GA into the cell, and to induce the GA catabolic pathway. Residual growth of ΔgaaR on complex pectins is likely due to the expression of pectinases acting on rhamnogalacturonan and subsequent metabolism of the monosaccharides othermore » than GA.« less

  5. Electro-optic investigation of the n-alkanethiol GaAs(001) interface: Surface phenomena and applications to photoluminescence-based biosensing

    NASA Astrophysics Data System (ADS)

    Marshall, Gregory M.

    Semiconductor surfaces coupled to molecular structures derived from organic chemistry form the basis of an emerging class of field-effect devices. In addition to molecular electronics research, these interfaces are developed for a variety of sensor applications in the electronic and optical domains. Of practical interest are self-assembled monolayers (SAMs) comprised of n-alkanethiols [HS(CH2)n], which couple to the GaAs(001) surface through S-GaAs covalent bond formation. These SAMs offer potential functionality in terms of the requisite sensor chemistry and the passivation effect such coupling is known to afford. In this thesis, the SAM-GaAs interface is investigated in the context of a photonic biosensor based on photoluminescence (PL) variation. The scope of the work is categorized into three parts: i) the structural and compositional analysis of the surface using X-ray photoelectron spectroscopy (XPS), ii) the investigation of electronic properties at the interface under equilibrium conditions using infrared (IR) spectroscopy, the Kelvin probe method, and XPS, and iii) the analysis of the electro-optic response under steady-state photonic excitation, specifically, the surface photovoltage (SPV) and PL intensity. Using a partial overlayer model of angle-resolved XPS spectra in which the component assignments are shown to be quantitatively valid, the coverage fraction of methyl-terminated SAMs is shown to exceed 90%. Notable among the findings are a low-oxide, Ga-rich surface with elemental As present in sub-monolayer quantities consistent with theoretical surface morphologies. Modal analysis of transmission IR spectra show that the SAM molecular order is sufficient to support a Beer-Lambert determination of the IR optical constants, which yields the observation of a SAM-specific absorbance enhancement. By correlation of the IR absorbance with the SAM dipole layer potential, the enhancement mechanism is attributed to the vibrational moments added by the

  6. Dual demodulation interferometer with two-wave mixing in GaAs photorefractive crystal

    NASA Astrophysics Data System (ADS)

    Zhenzhen, Zhang; Zhongqing, Jia; Guangrong, Ji; Qiwu, Wang

    2018-07-01

    A dual demodulation interferometer with two-wave mixing (TWM) in the GaAs photorefractive crystal (PRC) is proposed and experimentally demonstrated. The GaAs PRC has tiny temperature change under high voltage thus not requiring thermoelectric cooler (TEC) to stabilize the temperature, and adaptive to low frequency fluctuation below 200 Hz. The system is an unbalanced TWM interferometer, which could demodulate the phase change both space variation and wavelength shift induced by strain. Two demodulation modes' formulas are provided in theory respectively. Experimental results have been tested and compared with theoretical analysis, demonstrating that it is a practical and flexible system for detection of mechanical vibration or structure health monitoring (SHM) in engineering by selecting different demodulation mode.

  7. Optical pumping and negative luminescence polarization in charged GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

    2009-01-01

    Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

  8. Design principles for morphologies of antireflection patterns for solar absorbing applications.

    PubMed

    Moon, Yoon-Jong; Na, Jin-Young; Kim, Sun-Kyung

    2015-07-01

    Two-dimensional surface texturing is a widespread technology for imparting broadband antireflection, yet its design rules are not completely understood. The dependence of the reflectance spectrum of a periodically patterned glass film on various structural parameters (e.g., pitch, height, shape, and fill factor) has been investigated by means of full-vectorial numerical simulations. An average weighted reflectivity accounting for the AM1.5G solar spectrum (λ=300-1000  nm) was sinusoidally modulated by a rod pattern's height, and was minimized for pitches of 400-600 nm. When a rationally optimized cone pattern was used, the average weighted reflectivity was less than 0.5%, for incident angles of up to 40° off normal. The broadband antireflection of a cone pattern was reproduced well by a graded refractive index film model corresponding to its geometry, with the addition of a diffraction effect resulting from its periodicity. The broadband antireflection ability of optimized cone patterns is not limited to the glass material, but rather is generically applicable to other semiconductor materials, including Si and GaAs. The design rules developed herein represent a key step in the development of light-absorbing devices, such as solar cells.

  9. Image processing using Gallium Arsenide (GaAs) technology

    NASA Technical Reports Server (NTRS)

    Miller, Warner H.

    1989-01-01

    The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

  10. A GaAs vector processor based on parallel RISC microprocessors

    NASA Astrophysics Data System (ADS)

    Misko, Tim A.; Rasset, Terry L.

    A vector processor architecture based on the development of a 32-bit microprocessor using gallium arsenide (GaAs) technology has been developed. The McDonnell Douglas vector processor (MVP) will be fabricated completely from GaAs digital integrated circuits. The MVP architecture includes a vector memory of 1 megabyte, a parallel bus architecture with eight processing elements connected in parallel, and a control processor. The processing elements consist of a reduced instruction set CPU (RISC) with four floating-point coprocessor units and necessary memory interface functions. This architecture has been simulated for several benchmark programs including complex fast Fourier transform (FFT), complex inner product, trigonometric functions, and sort-merge routine. The results of this study indicate that the MVP can process a 1024-point complex FFT at a speed of 112 microsec (389 megaflops) while consuming approximately 618 W of power in a volume of approximately 0.1 ft-cubed.

  11. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  12. Growth of semimetallic ErAs films epitaxially embedded in GaAs

    NASA Astrophysics Data System (ADS)

    Crook, Adam M.; Nair, Hari P.; Lee, Jong H.; Ferrer, Domingo A.; Akinwande, Deji; Bank, Seth R.

    2011-10-01

    We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.

  13. HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

    2007-09-28

    The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

  14. A high-speed GaAs MESFET optical controller

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

    1989-01-01

    Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

  15. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

    NASA Astrophysics Data System (ADS)

    Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

    2012-06-01

    High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

  16. Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

    NASA Astrophysics Data System (ADS)

    Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

    1992-12-01

    Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

  17. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  18. Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer

    NASA Astrophysics Data System (ADS)

    Kicin, S.; Cambel, V.; Kuliffayová, M.; Gregušová, D.; Kováčová, E.; Novák, J.; Kostič, I.; Förster, A.

    2002-01-01

    We present a wet-chemical-etching method developed for the preparation of GaAs four-sided pyramid-shaped mesas. The method uses a fast lateral etching of AlAs interlayer that influences the cross-sectional profiles of etched structures. We have tested the method using H3PO4:H2O2:H2O etchant for the (100) GaAs patterning. The sidewalls of the prepared pyramidal structures together with the (100) bottom facet formed the cross-sectional angles 25° and 42° for mask edges parallel, resp. perpendicular to {011} cleavage planes. For mask edges turned in 45° according to the cleavage planes, 42° cross-sectional angles were obtained. Using the method, symmetric and more than 10-μm-high GaAs "Egyptian" pyramids with smooth tilted facets were prepared.

  19. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Fedyukin, A. V.; Arsentyev, I. N.

    The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free chargemore » carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.« less

  20. The 25 percent-efficient GaAs Cassegrainian concentrator cell

    NASA Technical Reports Server (NTRS)

    Hamaker, H. C.; Grounner, M.; Kaminar, N. R.; Kuryla, M. S.; Ladle, M. J.; Liu, D. D.; Macmillan, H. F.; Partain, L. D.; Virshup, G. F.; Werthen, J. G.

    1989-01-01

    Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration.

  1. Structural and optical characteristics of GaAs films grown on Si/Ge substrates

    NASA Astrophysics Data System (ADS)

    Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

    2018-03-01

    A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

  2. Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Babilotte, P.; Morozov, E.; Ruello, P.; Mounier, D.; Edely, M.; Breteau, J.-M.; Bulou, A.; Gusev, V.

    2007-12-01

    We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wideband acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (approx 680nm), short acoustic disturbances of approx 7ps of duration have been registered.

  3. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

    Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

  4. Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n -type and p -type GaAs

    NASA Astrophysics Data System (ADS)

    Hu, Jianbo; Zhang, Hang; Sun, Yi; Misochko, Oleg V.; Nakamura, Kazutaka G.

    2018-04-01

    The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report a comparative investigation into the dependence of the coupling on temperature and doping in n - and p -type GaAs by using ultrafast coherent phonon spectroscopy. A suppression of coherent oscillations has been observed in p -type GaAs at lower temperature, strikingly different from n -type GaAs and other materials in which coherent oscillations are strongly enhanced by cooling. We attribute this unexpected observation to a cooling-induced elongation of the depth of the depletion layer which effectively increases the screening time of the surface field due to a slow diffusion of photoexcited carriers in p -type GaAs. Such an increase breaks the requirement for the generation of coherent LO phonons and, in turn, LO phonon-plasmon coupled modes because of their delayed formation in time.

  5. InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

    NASA Astrophysics Data System (ADS)

    Liang, B. L.; Wang, Zh M.; Mazur, Yu I.; Strelchuck, V. V.; Holmes, K.; Lee, J. H.; Salamo, G. J.

    2006-06-01

    We systematically investigated the correlation between morphological and optical properties of InGaAs self-assembled quantum dots (QDs) grown by solid-source molecular beam epitaxy on GaAs (n 11)B (n = 9, 8, 7, 5, 3, 2) substrates. Remarkably, all InGaAs QDs on GaAs(n 11)B under investigation show optical properties superior to those for ones on GaAs(100) as regards the photoluminescence (PL) linewidth and intensity. The morphology for growth of InGaAs QDs on GaAs (n 11)B, where n = 9, 8, 7, 5, is observed to have a rounded shape with a higher degree of lateral ordering than that on GaAs(100). The optical property and the lateral ordering are best for QDs grown on a (511)B substrate surface, giving a strong correlation between lateral ordering and PL optical quality. Our results demonstrate the potential for high quality InGaAs QDs on GaAs(n 11)B for optoelectronic applications.

  6. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lavrova, Olga; Balakrishnan, Ganesh

    2017-02-24

    The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less

  7. Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

    NASA Astrophysics Data System (ADS)

    Li, Jianfeng; Luo, Hongyu; He, Yulian; Liu, Yong; Luo, Binbin; Sun, Zhongyuan; Zhang, Lin; Turitsyn, Sergei K.

    2014-05-01

    A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

  8. Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

    NASA Astrophysics Data System (ADS)

    Li, J. F.; Luo, H. Y.; He, Y. L.; Liu, Y.; Zhang, L.; Zhou, K. M.; Rozhin, A. G.; Turistyn, S. K.

    2014-06-01

    A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 µJ with a pulse width of 1.68 µs and signal-to-noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 µm. To the best of our knowledge, this is the first 3 µm region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

  9. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    NASA Astrophysics Data System (ADS)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  10. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    1986-01-01

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  11. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

    2016-11-15

    The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

  12. Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Wu, Y.

    1988-01-01

    A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

  13. Structural Study of GaAs(001):In 4×2 Surface

    NASA Astrophysics Data System (ADS)

    Lee, T.-L.; Zegenhagen, J.; Lyman, P. F.; Bedzyk, M. J.

    1997-03-01

    In a STM and LEED investigation (U. Resch-Esser et al., JVST B 13, 1672 (1995)), the indium-terminated GaAs(001) surface exhibited a (4×2) reconstruction. Based on this study, a dimer model, similar to that proposed by Biegelsen et al. (PRB 41, 5701(1990)) for the (4×2) clean surface, was proposed. However, the detailed local structure of the In ad-atoms was not resolvable from the STM image. In this work, we applied in situ x-ray standing wave (XSW) measurements to determine the surface structure of the GaAs(001) upon the adsorption of In at low coverages. The (4×2)/c(8×2) In-terminated GaAs(001) surface (Θ_In = 0.2 ML) was prepared by MBE. The (004) XSW measurement showed that the In ad-atoms were located 1.61 Åabove the (004) diffraction planes. At higher In coverages (up to 0.6 ML) the In (004) coherent fraction was small. This is consistent with the ladder-type pattern observed by STM at Θ_In > 0.5 ML, which indicated that there were two coexisting surface structures. For Θ_In = 0.2 ML, we found that our off-normal XSW measurements did not agree with the model proposed by Resch-Esser et al.. This work is sponsored by DOE-BES No. W-31-109-ENG-38 and by NSF No. DMR-9632472.

  14. Tunneling Spectroscopy of Chemically Treated Surfaces of GaAs(001)

    NASA Astrophysics Data System (ADS)

    Fan, Jia-Fa; Tokumoto, Hiroshi

    1996-03-01

    Effect of surface chemical treatment on the surface electronic properties of GaAs(001) was studied by tunneling spectroscopy. Samples of highly-Si-doped GaAs were first cleaned and etched using conventional processes, then soaked in aqueous solutions of (NH_4)_2Sx and/or NH_4F for few hours, and finally rinsed in ethanol. The constant separation spectroscopy was done under pure N2 ambient at room temperature (295K) with our scanning tunneling microscope (STM). As a result, the sulfide treament lead to electron tunnelings starting typically at the sample voltages of -0.50 V and 0.90 V at initial settings of 1.50 V and 0.20 nA. For etched-only surface, however, the starting voltages were -0.70 V and 0.70 V. Effects of heating, laser-irradiation, and the fluoride treatment will be presented. Also, the mechanism of the shift of the surface Fermi level will be discussed.

  15. A graphene/single GaAs nanowire Schottky junction photovoltaic device.

    PubMed

    Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

    2018-05-17

    A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

  16. High-reliability GaAs image intensifier with unfilmed microchannel plate

    NASA Astrophysics Data System (ADS)

    Bender, Edward J.; Estrera, Joseph P.; Ford, C. E.; Giordana, A.; Glesener, John W.; Lin, P. P.; Nico, A. J.; Sinor, Timothy W.; Smithson, R. H.

    1999-07-01

    Current GaAs image intensifier technology requires that the microchannel plate (MCP) have a thin dielectric film on the side facing the photocathode. This protective coating substantially reduces the amount of outgassing of ions and neutral species from the microchannels. The prevention of MCP outgassing is necessary in order to prevent the `poisoning' of the Cs:O surface on the GaAs photocathode. Many authors have experimented with omitting the MCP coating. The results of such experiments invariably lead to an intensifier with a reported useful life of less than 100 hours, due to contamination of the Cs:O layer on the photocathode. Unfortunately, the MCP film is also a barrier to electron transport within the intensifier. Substantial enhancement of the image intensifier operating parameters is the motivation for the removal of the MCP film. This paper presents results showing for the first time that it is possible to fabricate a long lifetime image intensifier with a single uncoated MCP.

  17. The presence of isolated hydrogen donors in heavily carbon-doped GaAs

    NASA Astrophysics Data System (ADS)

    Fushimi, Hiroshi; Wada, Kazumi

    1994-12-01

    The deactivation mechanism of carbon acceptors in GaAs has systematically been studied by measuring the annealing behavior and depth profiles of the carrier concentration. It is found that hydrogen impurities dominate carbon deactivation. Their deactivation undergoes two different ways: Hydrogen donors isolated from carbon acceptors compensate carbon and hydrogen impurities neutralize the carbon by forming neutral carbon-hydrogen complexes. The compensating hydrogen donors diffuse out extremely fast at relatively low temperatures. This is, to the best of our knowledge, the first report on the presence of isolated hydrogen donors in heavily carbon-doped GaAs. The dissociation of carbon-hydrogen complexes is much slower than reported. The mechanism is discussed in terms of a hydrogen retrapping effect by carbon.

  18. Effects of gold diffusion on n-type doping of GaAs nanowires.

    PubMed

    Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

    2010-11-10

    The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

  19. Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Suzuki, Hidetoshi, E-mail: hsuzuki@cc.miyazaki-u.ac.jp; Nakata, Yuka; Takahasi, Masamitu

    2016-03-15

    The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain sizemore » was smaller for all film thicknesses.« less

  20. Absorbent product to absorb fluids. [for collection of human wastes

    NASA Technical Reports Server (NTRS)

    Dawn, F. S.; Correale, J. V. (Inventor)

    1982-01-01

    A multi-layer absorbent product for use in contact with the skin to absorb fluids is discussed. The product utilizes a water pervious facing layer for contacting the skin, overlayed by a first fibrous wicking layer, the wicking layer preferably being of the one-way variety in which fluid or liquid is moved away from the facing layer. The product further includes a first container section defined by inner and outer layer of a water pervious wicking material between which is disposed a first absorbent mass. A second container section defined by inner and outer layers between which is disposed a second absorbent mass and a liquid impermeable/gas permeable layer. Spacesuit applications are discussed.