GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

NASA Astrophysics Data System (ADS)

In Park, Suk; Trojak, Oliver Joe; Lee, Eunhye; Song, Jin Dong; Kyhm, Jihoon; Han, Ilki; Kim, Jongsu; Yi, Gyu-Chul; Sapienza, Luca

2018-05-01

We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

PubMed

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

PubMed Central

Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

2007-01-01

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

PubMed Central

Wang, L; Kiravittaya, S; Songmuang, R; Schmidt, OG; Krause, B; Metzger, TH

2006-01-01

We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.

Spectroscopy of Single Free Standing Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, M D; Hollars, C W; Huser, T

2006-03-14

We investigated the interaction of quantum confined exciton states GaAs quantum wells with native surface states. Single molecule photoluminescence (PL) spectroscopy, developed by T. Huser at LLNL was used to probe the unique bare quantum wells in the free standing quantum well structure. The latter was developed by the M. D. Williams at Clark Atlanta University. The goals of the project during this budget cycle were to procure samples containing GaAs free standing QWs, identify suitable regions for PL analysis at Lawrence Livermore, analyze the structures at room temperature and at liquid nitrogen temperatures. The specific regions of interest onmore » the sample structures were identified by scanning electron microscopy at Clark Atlanta prior to transport to LLNL. Previous attempts at other facilities using NSOM, cathodoluminescence, and conventional PL showed little luminescence activity at room temperature from the 200 {angstrom} thick wells. This suggested either excess recombination due to surface states in the quantum well region or insufficient absorption length for photoluminescence. The literature suggested that the effect of the defects could be eliminated by reducing the sample temperature below their associated activation energies. In our previous subcontract work with LLNL, a significant amount of effort was expended to modify the apparatus to allow low temperature measurements. The modifications were not successful and we concluded that in order to do the measurements at low temperature we would need to purchase a commercial optical cryostat to get reliable results. Ms. Rochelle Bryant worked during the summer as an intern at LLNL on the project under the supervision of C. Hollars and in collaboration with T. Huser and found that PL emission could be obtained at room temperature. This was a surprising result as the literature and our experience shows that there is no PL emission from GaAs at room temperature. We speculate that this is due to the

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei

2013-12-04

We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

PubMed Central

Rastelli, A; Schmidt, OG; Ulrich, SM; Michler, P

2006-01-01

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu

2014-12-22

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSSmore » with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.« less

Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs /GaAs single quantum well structures

NASA Astrophysics Data System (ADS)

Chen, T. H.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.

2004-12-01

Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions ( x =0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

2015-02-15

A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

Fast Single-Shot Hold Spin Readout in Double Quantum Dots

NASA Astrophysics Data System (ADS)

Bogan, Alexander; Studenikin, Sergei; Korkusinski, Marek; Aers, Geof; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy; Tracy, Lisa; Reno, John; Hargett, Terry

Solid state spin qubits in quantum dots hold promise as scalable, high-density qubits in quantum information processing architectures. While much of the experimental investigation of these devices and their physics has focused on confined electron spins, hole spins in III-V semiconductors are attractive alternatives to electrons due to the reduced hyperfine coupling between the spin and the incoherent nuclear environment. In this talk, we will discuss a measurement protocol of the hole spin relaxation time T1 in a gated lateral GaAs double quantum dot tuned to the one and two-hole regimes, as well as a new technique for single-shot projective measurement of a single spin in tens of nanoseconds or less. The technique makes use of fast non-spin-conserving inter-dot transitions permitted by strong spin-orbit interactions for holes, as well as the latching of the charge state of the second quantum dot for enhanced sensitivity. This technique allows a direct measurement of the single spin relaxation time on time-scales set by physical device rather than by limitations of the measurement circuit.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

Quenching of dynamic nuclear polarization by spin-orbit coupling in GaAs quantum dots.

PubMed

Nichol, John M; Harvey, Shannon P; Shulman, Michael D; Pal, Arijeet; Umansky, Vladimir; Rashba, Emmanuel I; Halperin, Bertrand I; Yacoby, Amir

2015-07-17

The central-spin problem is a widely studied model of quantum decoherence. Dynamic nuclear polarization occurs in central-spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in quantum information processing for coherent spin manipulation. However, the mechanisms limiting this process remain only partially understood. Here we show that spin-orbit coupling can quench dynamic nuclear polarization in a GaAs quantum dot, because spin conservation is violated in the electron-nuclear system, despite weak spin-orbit coupling in GaAs. Using Landau-Zener sweeps to measure static and dynamic properties of the electron spin-flip probability, we observe that the size of the spin-orbit and hyperfine interactions depends on the magnitude and direction of applied magnetic field. We find that dynamic nuclear polarization is quenched when the spin-orbit contribution exceeds the hyperfine, in agreement with a theoretical model. Our results shed light on the surprisingly strong effect of spin-orbit coupling in central-spin systems.

Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Placidi, E.

2008-12-08

We report on single dot microphotoluminescence ({mu}PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO{sub 2} mask deposited on GaAs(001). By comparing atomic force microscopy measurements with {mu}PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highlymore » effective in the site-controlled dot nucleation.« less

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Chongbiao; Wang, Bo; Huang, Yupeng

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

Probing the excited subband dispersion of holes confined to GaAs wide quantum wells

NASA Astrophysics Data System (ADS)

Jo, Insun; Liu, Yang; Deng, H.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.

Owing to the strong spin-orbit coupling and their large effective mass, the two-dimensional (2D) holes in modulation-doped GaAs quantum wells provide a fertile test bed to study the rich physics of low-dimensional systems. In a wide quantum well, even at moderate 2D densities, the holes start to occupy the excited subband, a subband whose dispersion is very unusual and has a non-monotonic dependence on the wave vector. Here, we study a 2D hole system confined to a 40-nm-thick (001) GaAs quantum well and demonstrate that, via the application of both front and back gates, the density can be tuned in a wide range, between ~1 and 2 ×1011 cm-2. Using Fourier analysis of the low-field Shubnikov-de Haas oscillations, we investigate the population of holes and the spin-orbit interaction induced spin-splitting in different subbands. We discuss the results in light of self-consistent quantum calculations of magneto-oscillations. Work support by the DOE BES (DE-FG02-00-ER45841), the NSF (Grants DMR-1305691 and MRSEC DMR-1420541), the Gordon and Betty Moore Foundation (Grant GBMF4420), and Keck Foundation for experiments, and the NSF Grant DMR-1310199 for calculations.

Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction

NASA Astrophysics Data System (ADS)

Ji, Xiaochen; Shen, Chao; Wu, Yuanjun; Lu, Jun; Zhao, Jianhua; Zheng, Houzhi

2017-11-01

By biasing a ferromagnetic metal MnGa/10 nm-thick, n-type GaAs quantum well (QW) junction from negative to positive, it is found that its spin dynamics at zero magnetic field is composed of two components with opposite signs. One is excited by a circularly polarized pump beam. The other is induced by ferromagnetic proximity polarization (FPP), which is continuously enhanced as the bias increases towards the positive direction. The time-resolved Kerr rotations have also been measured at a magnetic field of 0.9 Tesla. A phase reversion of Larmor precession is observed as the bias passes through  +0.5 V. Following simple quantum mechanics, we become aware of the fact that the transmission and reflection rates of electrons at the interface of MnGa/n-type GaAs QW are enhanced by a factor of ν , which is the attempting frequency of electron onto a ferromagnet/semiconductor interface. That gives a reasonable explanation why the FPP effect in our MnGa/n-type GaAs QW junction is greatly enhanced as biasing it into forward direction.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

PubMed

Tong, C Z; Yoon, S F

2008-09-10

We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

Multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution as a mechanism to generate intermediate band energy levels

NASA Astrophysics Data System (ADS)

Rodríguez-Magdaleno, K. A.; Pérez-Álvarez, R.; Martínez-Orozco, J. C.; Pernas-Salomón, R.

2017-04-01

In this work the generation of an intermediate band of energy levels from multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution is reported. Within the effective mass approximation the electronic structure of a GaAs spherical quantum-dot surrounded by one, two and three shells is studied in detail using a numerically stable transfer matrix method. We found that a shells-size distribution characterized by continuously wider GaAs domains is a suitable mechanism to generate the intermediate band whose width is also dependent on the Aluminium concentration x. Our results suggest that this effective mechanism can be used for the design of wider intermediate band than reported in other quantum systems with possible solar cells enhanced performance.

Lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Arakawa, Yasuhiko

2017-02-01

Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of single NW lasers utilizing bulk materials, it is crucial to incorporate lower-dimensional quantum nanostructures into the NW in order to achieve superior device performance with respect to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot (QD) is a useful and essential nanostructure that can meet these requirements. In this presentation, we will talk about our recent research activity regarding room temperature lasing of a single GaAs NW containing 50-stacked In0.2Ga0.8As/GaAs QDs. The NW cavities consist of multiple In0.2Ga0.8As/GaAs heterostructures acting as a QD active material, which are grown on shallow (<45 nm) GaAs core NWs and followed by GaAs/Al0.1Ga0.9As/GaAs core/shell/cap structures. Lasing oscillation is achieved at the emission wavelength of 900 nm by properly designing the NW cavity and tailoring the emission energy of each QD to enhance the optical gain. Obtained threshold pump pulse fluence is 179 μJ/cm2 at room temperature and the characteristics temperature is 133K which is higher than that of conventional bulk NW lasers. Our demonstration paves the way toward ultra-small lasers with extremely low-power consumption for integrated photonic systems. Furthermore, we will discuss our recent results on the demonstration of several types of NWQD lasers in order to improve the device performance of the NWQD lasers.

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belhadj, T.; Amand, T.; Kunz, S.

2010-08-02

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Many-Body Effect in Spin Dephasing in n-Type GaAs Quantum Wells

NASA Astrophysics Data System (ADS)

Weng, Ming-Qi; Wu, Ming-Wei

2005-03-01

By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-type GaAs (100) quantum wells for high temperatures. In our study, we include the spin-conserving scattering such as the electron-phonon, the electron-nonmagnetic impurity as well as the electron-electron Coulomb scattering into consideration. The dephasing obtained from our theory contains both the single-particle and the many-body contributions with the latter originating from the inhomogeneous broadening introduced by the DP term [J. Supercond.: Incorp. Novel Magn. 14 (2001) 245 Eur. Phys. J. B 18 (2000) 373]. Our result agrees very well with the experimental data [Phys. Rev. B 62 (2000) 13034] of Malinowski et al. We further show that in the case we study, the spin dephasing is dominated by the many-body effect.

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

NASA Astrophysics Data System (ADS)

Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.

2004-03-01

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

PubMed Central

Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

2017-01-01

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

Suppression of Overhauser Effect in the Exciton-Nuclear Spin System of GaAs Quantum Dot

DTIC Science & Technology

2001-06-01

the exciton-nuclear spin system of GaAs quantum dot V L. Korenevt, I. A. Merkulovt, D. Gammonj, Al. L. Efrosj, T. A. Kennedyl, M. Rosenj, D. S ...Katzerj and S . W. Brown§ t loffe Physico-Technical Institute, St Petersburg, Russia I Naval Research Laboratory, Washington DC 20375, USA § NIST...2.5 s -1 for N - 105 nuclei in the quantum dot [51 and rb - 0.1 ns [9]. The estimation is in agreement with experiment (Texp ; 3 s ). Coupling of

Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

PubMed

Wen, Lei; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

2016-08-01

The growth process of InAs quantum dots grown on GaAs (511)A substrates has been studied by atomic force microscopy. According to the atomic force microscopy studies for quantum dots grown with varying InAs coverage, a noncoherent nucleation of quantum dots is observed. Moreover, due to the long migration length of In atoms, the Ostwald ripening process is aggravated, resulting in the bad uniformity of InAs quantum dots on GaAs (511)A. In order to improve the uniformity of nucleation, the growth rate is increased. By studying the effects of increased growth rates on the growth of InAs quantum dots, it is found that the uniformity of InAs quantum dots is greatly improved as the growth rates increase to 0.14 ML s(-1) . However, as the growth rates increase further, the uniformity of InAs quantum dots becomes dual-mode, which can be attributed to the competition between Ostwald ripening and strain relaxation processes. The results in this work provide insights regarding the competition between thermal dynamical barriers and the growth kinetics in the growth of InAs quantum dots, and give guidance to improve the size uniformity of InAs quantum dots on (N11)A substrates. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

NASA Technical Reports Server (NTRS)

Dzegilenko, Fedor N.; Saini, Subhash (Technical Monitor)

1998-01-01

The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rengstl, U.; Schwartz, M.; Herzog, T.

2015-07-13

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, wheremore » the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.« less

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

PubMed

Yu, Ying; Dou, Xiu-Ming; Wei, Bin; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Li; Su, Dan; Xu, Jian-Xing; Wang, Hai-Yan; Ni, Hai-Qiao; Sun, Bao-Quan; Ji, Yuan; Han, Xiao-Dong; Niu, Zhi-Chuan

2014-05-01

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well

NASA Astrophysics Data System (ADS)

Rendell, M.; Klochan, O.; Srinivasan, A.; Farrer, I.; Ritchie, D. A.; Hamilton, A. R.

2015-10-01

We perform magnetic focussing of high mobility holes confined in a shallow GaAs/Al0.33Ga0.67As quantum well grown on a (100) GaAs substrate. We observe ballistic focussing of holes over a path length of up to 4.9 μm with a large number of focussing peaks. We show that additional structure on the focussing peaks can be caused by a combination of the finite width of the injector quantum point contact and Shubnikov-de Haas oscillations. These results pave the way to studies of spin-dependent magnetic focussing and spin relaxation lengths in two-dimentional hole systems without complications of crystal anisotropies and anisotropic g-tensors.

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2002-10-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

2017-11-01

Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

NASA Astrophysics Data System (ADS)

Liang, B. L.; Wang, Zh M.; Mazur, Yu I.; Strelchuck, V. V.; Holmes, K.; Lee, J. H.; Salamo, G. J.

2006-06-01

We systematically investigated the correlation between morphological and optical properties of InGaAs self-assembled quantum dots (QDs) grown by solid-source molecular beam epitaxy on GaAs (n 11)B (n = 9, 8, 7, 5, 3, 2) substrates. Remarkably, all InGaAs QDs on GaAs(n 11)B under investigation show optical properties superior to those for ones on GaAs(100) as regards the photoluminescence (PL) linewidth and intensity. The morphology for growth of InGaAs QDs on GaAs (n 11)B, where n = 9, 8, 7, 5, is observed to have a rounded shape with a higher degree of lateral ordering than that on GaAs(100). The optical property and the lateral ordering are best for QDs grown on a (511)B substrate surface, giving a strong correlation between lateral ordering and PL optical quality. Our results demonstrate the potential for high quality InGaAs QDs on GaAs(n 11)B for optoelectronic applications.

Acoustic phonon dephasing in shallow GaAs/Ga 1- xAl xAs single quantum wells

NASA Astrophysics Data System (ADS)

Cassabois, G.; Meccherini, S.; Roussignol, Ph.; Bogani, F.; Gurioli, M.; Colocci, M.; Planel, R.; Thierry-Mieg, V.

1998-07-01

The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga 1- xAl xAs single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements ( T2) of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2003-03-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference. Ref: PRL 89, 207601 (2002).

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

NASA Astrophysics Data System (ADS)

Ortiz, F. E.; Mishurnyi, V.; Gorbatchev, A.; De Anda, F.; Prutskij, T.

2011-01-01

In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

Expanded GAA repeats impair FXN gene expression and reposition the FXN locus to the nuclear lamina in single cells.

PubMed

Silva, Ana M; Brown, Jill M; Buckle, Veronica J; Wade-Martins, Richard; Lufino, Michele M P

2015-06-15

Abnormally expanded DNA repeats are associated with several neurodegenerative diseases. In Friedreich's ataxia (FRDA), expanded GAA repeats in intron 1 of the frataxin gene (FXN) reduce FXN mRNA levels in averaged cell samples through a poorly understood mechanism. By visualizing FXN expression and nuclear localization in single cells, we show that GAA-expanded repeats decrease the number of FXN mRNA molecules, slow transcription, and increase FXN localization at the nuclear lamina (NL). Restoring histone acetylation reverses NL positioning. Expanded GAA-FXN loci in FRDA patient cells show increased NL localization with increased silencing of alleles and reduced transcription from alleles positioned peripherally. We also demonstrate inefficiencies in transcription initiation and elongation from the expanded GAA-FXN locus at single-cell resolution. We suggest that repressive epigenetic modifications at the expanded GAA-FXN locus may lead to NL relocation, where further repression may occur. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Addressable single-spin control in multiple quantum dots coupled in series

NASA Astrophysics Data System (ADS)

Nakajima, Takashi

2015-03-01

Electron spin in semiconductor quantum dots (QDs) is promising building block of quantum computers for its controllability and potential scalability. Recent experiments on GaAs QDs have demonstrated necessary ingredients of universal quantum gate operations: single-spin rotations by electron spin resonance (ESR) which is virtually free from the effect of nuclear spin fluctuation, and pulsed control of two-spin entanglement. The scalability of this architecture, however, has remained to be demonstrated in the real world. In this talk, we will present our recent results on implementing single-spin-based qubits in triple, quadruple, and quintuple QDs based on a series coupled architecture defined by gate electrodes. Deterministic initialization of individual spin states and spin-state readout were performed by the pulse operation of detuning between two neighboring QDs. The spin state was coherently manipulated by ESR, where each spin in different QDs is addressed by the shift of the resonance frequency due to the inhomogeneous magnetic field induced by the micro magnet deposited on top of the QDs. Control of two-spin entanglement was also demonstrated. We will discuss key issues for implementing quantum algorithms based on three or more qubits, including the effect of a nuclear spin bath, single-shot readout fidelity, and tuning of multiple qubit devices. Our approaches to these issues will be also presented. This research is supported by Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) from JSPS, IARPA project ``Multi-Qubit Coherent Operations'' through Copenhagen University, and Grant-in-Aid for Scientific Research from JSPS.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1981-01-01

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings.

PubMed

Wu, Zhenhua; Li, Jian; Li, Jun; Yin, Huaxiang; Liu, Yu

2017-11-15

The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) have been investigated theoretically. The configuration interaction (CI) method is employed to calculate the eigenvalues and eigenstates of the multiple-electron QR accurately. Our numerical results demonstrate that the symmetry breaking induced by the RSOI and DSOI leads to an anisotropic distribution of multi-electron states. The Coulomb interaction offers additional modulation of the electron distribution and thus the optical absorption indices in the quantum rings. By tuning the magnetic/electric fields and/or electron numbers in a quantum ring, one can change its optical properties significantly. Our theory provides a new way to control the multi-electron states and optical properties of a QR by hybrid modulations or by electrical means only.

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

Magneto-transport study of quantum phases in wide GaAs quantum wells

NASA Astrophysics Data System (ADS)

Liu, Yang

In this thesis we study several quantum phases in very high quality two-dimensional electron systems (2DESs) confined to GaAs single wide quantum wells (QWs). In these systems typically two electric subbands are occupied. By controlling the electron density as well as the QW symmetry, we can fine tune the cyclotron and subband separation energies, so that Landau levels (LLs) belonging to different subbands cross at the Fermi energy EF. The additional subband degree of freedom enables us to study different quantum phases. Magneto-transport measurements at fixed electron density n and various QW symmetries reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall (FQH) states at LL filling factors nu = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. These q/3 states are stable and strong as long as EF lies in a ground-state (N = 0) LL, regardless of whether that level belongs to the symmetric or the anti-symmetric subband. We also observe subtle and distinct evolutions near filling factors nu = 5/2 and 7/2, as we change the density n, or the symmetry of the charge distribution. The even-denominator FQH states are observed at nu = 5/2, 7/2, 9/2 and 11/2 when EF lies in the N= 1 LLs of the symmetric subband (the S1 levels). As we increase n, the nu = 5/2 FQH state suddenly disappears and turns into a compressible state once EF moves to the spin-up, N = 0, anti-symmetric LL (the A0 ↑ level). The sharpness of this disappearance suggests a first-order transition from a FQH to a compressible state. Moreover, thanks to the renormalization of the susbband energy separation in a well with asymmetric change distribution, two LLs can get pinned to each other when they are crossing at E F. We observe a remarkable consequence of such pinning: There is a developing FQH state when the LL filling factor of the symmetric subband nuS equals 5/2 while the antisymmetric subband has filling 1 < nuA <2. Next, we study the evolution of the nu=5/2 and 7/2 FQH

Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: zero magnetic field.

PubMed

Kushwaha, Manvir S

2011-09-28

We report on the theoretical investigation of the elementary electronic excitations in a quantum wire made up of vertically stacked self-assembled InAs/GaAs quantum dots. The length scales (of a few nanometers) involved in the experimental setups prompt us to consider an infinitely periodic system of two-dimensionally confined (InAs) quantum dot layers separated by GaAs spacers. The resultant quantum wire is characterized by a two-dimensional harmonic confining potential in the x-y plane and a periodic (Kronig-Penney) potential along the z (or the growth) direction within the tight-binding approximation. Since the wells and barriers are formed from two different materials, we employ the Bastard's boundary conditions in order to determine the eigenfunctions along the z direction. These wave functions are then used to generate the Wannier functions, which, in turn, constitute the legitimate Bloch functions that govern the electron dynamics along the direction of periodicity. Thus, the Bloch functions and the Hermite functions together characterize the whole system. We then make use of the Bohm-Pines' (full) random-phase approximation in order to derive a general nonlocal, dynamic dielectric function. Thus, developed theoretical framework is then specified to work within a (lowest miniband and) two-subband model that enables us to scrutinize the single-particle as well as collective responses of the system. We compute and discuss the behavior of the eigenfunctions, band-widths, density of states, Fermi energy, single-particle and collective excitations, and finally size up the importance of studying the inverse dielectric function in relation with the quantum transport phenomena. It is remarkable to notice how the variation in the barrier- and well-widths can allow us to tailor the excitation spectrum in the desired energy range. Given the advantage of the vertically stacked quantum dots over the planar ones and the foreseen applications in the single-electron devices

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

2016-10-01

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

NASA Technical Reports Server (NTRS)

Wang, Yang

1994-01-01

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

NASA Astrophysics Data System (ADS)

Maradan, D.; Casparis, L.; Liu, T.-M.; Biesinger, D. E. F.; Scheller, C. P.; Zumbühl, D. M.; Zimmerman, J. D.; Gossard, A. C.

2014-06-01

We present measurements of the electron temperature using gate-defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.

Single-Atom Single-Photon Quantum Interface

NASA Astrophysics Data System (ADS)

Moehring, David; Bochmann, Joerg; Muecke, Martin; Specht, Holger; Weber, Bernhard; Wilk, Tatjana; Rempe, Gerhard

2008-05-01

By combining atom trapping techniques and cavity cooling schemes we are able to trap a single neutral atom inside a high-finesse cavity for several tens of seconds. We show that our coupled atom-cavity system can be used to generate single photons in a controlled way. With our long trapping times and high single-photon production efficiency, the non-classical properties of the emitted light can be shown in the photon correlations of a single atom. In a similar atom-cavity setup, we investigate the interface between atoms and photons by entangling a single atom with a single photon emitted into the cavity and by further mapping the quantum state of the atom onto a second single photon. These schemes are intrinsically deterministic and establish the basic element required to realize a distributed quantum network with individual atoms at rest as quantum memories and single flying photons as quantum messengers. This work was supported by the Deutsche Forschungsgemeinschaft, and the European Union SCALA and CONQUEST programs. D. L. M. acknowledges support from the Alexander von Humboldt Foundation.

Comparisons of single event vulnerability of GaAs SRAMS

NASA Astrophysics Data System (ADS)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

1982-01-01

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Defect interactions in GaAs single crystals

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Single colloidal quantum dots as sources of single photons for quantum cryptography

NASA Astrophysics Data System (ADS)

Pisanello, Ferruccio; Qualtieri, Antonio; Leménager, Godefroy; Martiradonna, Luigi; Stomeo, Tiziana; Cingolani, Roberto; Bramati, Alberto; De Vittorio, Massimo

2011-02-01

Colloidal nanocrystals, i.e. quantum dots synthesized trough wet-chemistry approaches, are promising nanoparticles for photonic applications and, remarkably, their quantum nature makes them very promising for single photon emission at room temperature. In this work we describe two approaches to engineer the emission properties of these nanoemitters in terms of radiative lifetime and photon polarization, drawing a viable strategy for their exploitation as room-temperature single photon sources for quantum information and quantum telecommunications.

Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

PubMed

Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

2015-03-11

GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot

NASA Astrophysics Data System (ADS)

Mal, Indranil; Samajdar, Dip Prakash; John Peter, A.

2018-07-01

Electronic band structure, effective masses, band offsets and optical gain of Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot systems are investigated using 10 band k·p Hamiltonian for various nitrogen and indium concentrations. The calculations include the effects of strain generated due to the lattice mismatch and the effective band gap of GaInAsN/GaAs heterostructures. The variation of conduction band, light hole and heavy hole band offsets with indium and nitrogen compositions in the alloy are obtained. The band structure of Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot is found in the crystal directions Δ (100) and Λ (111) using 10 band k·p Hamiltonian. The optical gain of the cylindrical quantum dot structures as functions of surface carrier concentration and the dot radius is investigated. Our results show that the tensile strain of 1.34% generates a band gap of 0.59 eV and the compressive strain of 2.2% produces a band gap of 1.28 eV and the introduction of N atoms has no effect on the spin orbit split off band. The variation of optical gain with the dot size and the carrier concentration indicates that the optical gain increases with the decrease in the radius of the quantum dot. The results may be useful for the potential applications in optical devices.

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodbridge, K.; Blood, P.; Fletcher, E.D.

1984-07-01

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavalli, Alessandro; Johnston, Steven; Sulas, Dana

Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on themore » spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.« less

Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M.

2017-02-22

Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novelmore » molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.« less

Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images

NASA Astrophysics Data System (ADS)

Dubecký, F.; Perd'ochová, A.; Ščepko, P.; Zat'ko, B.; Sekerka, V.; Nečas, V.; Sekáčová, M.; Hudec, M.; Boháček, P.; Huran, J.

2005-07-01

The present work describes a portable digital X-ray scanner based on bulk undoped semi-insulating (SI) GaAs monolithic strip line detectors. The scanner operates in "quantum" imaging mode ("single photon counting"), with potential improvement of the dynamic range in contrast of the observed X-ray images. The "heart" of the scanner (detection unit) is based on SI GaAs strip line detectors. The measured detection efficiency of the SI GaAs detector reached a value of over 60 % (compared to the theoretical one of ˜75 %) for the detection of 60 keV photons at a reverse bias of 200 V. The read-out electronics consists of 20 modules fabricated using a progressive SMD technology with automatic assembly of electronic devices. Signals from counters included in the digital parts of the modules are collected in a PC via a USB port and evaluated by custom developed software allowing X-ray image reconstruction. The collected data were used for the creation of the first X-ray "quantum" images of various test objects using the imaging software developed.

Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs /AlGaAs quantum wells

NASA Astrophysics Data System (ADS)

Malis, Oana; Pfeiffer, Loren N.; West, Kenneth W.; Sergent, A. Michael; Gmachl, Claire

2005-08-01

Bound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p-type doping. Strong narrow absorption peaks due to heavy-to-heavy hole transitions are observed with out-of-plane polarized light, and weaker broader features with in-plane polarized light. The heavy-to-heavy hole transition energy spans the spectral range between 206 to 126 meV as the quantum well width is increased from 25 to 45 Å. The experimental results are found to be in agreement with calculations of a six-band k •p model taking into account the full band structure of the digital alloy.

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

NASA Astrophysics Data System (ADS)

Kovsh, Alexey R.; Ledentsov, Nikolai N.; Mikhrin, Sergei S.; Zhukov, Alexey E.; Livshits, Daniil A.; Maleev, Nikolay A.; Maximov, Mikhail V.; Ustinov, Victor M.; Gubenko, Alexey E.; Gadjiev, Igor M.; Portnoi, Efim L.; Wang, Jyh Shyang; Chi, Jim Y.; Ouyang, Donald N.; Bimberg, Dieter; Lott, James A.

2004-06-01

The molecular beam epitaxy of self-assembled quantum dots (QDs) has reached a level such that the principal advantages of QD lasers can now be fully realized. We overview the most important recent results achieved to date including excellent device performance of 1.3 μm broad area and ridge waveguide lasers (Jth<150A/cm2, Ith=1.4 mA, differential efficiency above 70%, CW 300 mW single lateral mode operation), suppression of non-linearity of QD lasers, which results to improved beam quality, reduced wavelength chirp and sensitivity to optical feedback. Effect of suppression of side wall recombination in QD lasers is also described. These effects give a possibility to further improve and simplify processing and fabrication of laser modules targeting their cost reduction. Recent realization of 2 mW single mode CW operation of QD VCSEL with all-semiconductor DBR is also presented. Long-wavelength QD lasers are promising candidate for mode-locking lasers for optical computer application. Very recently 1.7-ps-wide pulses at repetition rate of 20 GHz were obtained on mode-locked QD lasers with clear indication of possible shortening of pulse width upon processing optimization. First step of unification of laser technology for telecom range with QD-lasers grown on GaAs has been done. Lasing at 1.5 μm is achieved with threshold current density of 0.8 kA/cm2 and pulsed output power 7W.

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

NASA Astrophysics Data System (ADS)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

NASA Astrophysics Data System (ADS)

Manca, M.; Wang, G.; Kuroda, T.; Shree, S.; Balocchi, A.; Renucci, P.; Marie, X.; Durnev, M. V.; Glazov, M. M.; Sakoda, K.; Mano, T.; Amand, T.; Urbaszek, B.

2018-04-01

In III-V semiconductor nano-structures, the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics are widely studied, but little is known about the initialization mechanisms. Here, we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X+ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage Vg. Variation of ΔVg on the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 μeV (-22%) to +10 μeV (+7%) although the X+ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X+ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X+ lifetime which is on the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.

Nanowire–quantum-dot lasers on flexible membranes

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Ota, Yasutomo; Ishida, Satomi; Nishioka, Masao; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-06-01

We demonstrate lasing in a single nanowire with quantum dots as an active medium embedded on poly(dimethylsiloxane) membranes towards application in nanowire-based flexible nanophotonic devices. Nanowire laser structures with 50 quantum dots are grown on patterned GaAs(111)B substrates and then transferred from the as-grown substrates on poly(dimethylsiloxane) transparent flexible organosilicon membranes, by means of spin-casting and curing processes. We observe lasing oscillation in the transferred single nanowire cavity with quantum dots at 1.425 eV with a threshold pump pulse fluence of ∼876 µJ/cm2, which enables the realization of high-performance multifunctional NW-based flexible photonic devices.

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

Phase-locking of a 2.5 THz quantum cascade laser to a frequency comb using a GaAs photomixer.

PubMed

Ravaro, M; Manquest, C; Sirtori, C; Barbieri, S; Santarelli, G; Blary, K; Lampin, J-F; Khanna, S P; Linfield, E H

2011-10-15

We report the heterodyne detection and phase locking of a 2.5 THz quantum cascade laser (QCL) using a terahertz frequency comb generated in a GaAs photomixer using a femtosecond fiber laser. With 10 mW emitted by the QCL, the phase-locked signal at the intermediate frequency yields 80 dB of signal-to-noise ratio in a bandwidth of 1 Hz.

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Single-Photon-Triggered Quantum Phase Transition

NASA Astrophysics Data System (ADS)

Lü, Xin-You; Zheng, Li-Li; Zhu, Gui-Lei; Wu, Ying

2018-06-01

We propose a hybrid quantum model combining cavity QED and optomechanics, which allows the occurrence of an equilibrium superradiant quantum phase transition (QPT) triggered by a single photon. This single-photon-triggered QPT exists in the cases of both ignoring and including the so-called A2 term; i.e., it is immune to the no-go theorem. It originally comes from the photon-dependent quantum criticality featured by the proposed hybrid quantum model. Moreover, a reversed superradiant QPT is induced by the competition between the introduced A2 term and the optomechanical interaction. This work offers an approach to manipulate QPT with a single photon, which should inspire the exploration of single-photon quantum-criticality physics and the engineering of new single-photon quantum devices.

Electron and Nuclear Spin Interactions in the Optical Spectra of Single GaAs Quantum Dots

DTIC Science & Technology

2001-05-28

VOLUME 86, NUMBER 22 P H Y S I C A L R E V I E W L E T T E R S 28 MAY 2001 5 Electron and Nuclear Spin Interactions in the Optical Spectra of Single...GaAs Quantum Dots D. Gammon, Al. L. Efros, T. A. Kennedy, M. Rosen, D. S . Katzer, and D. Park Naval Research Laboratory, Washington, D.C. 20375 S . W...Brown NIST, Gaithersburg, Maryland V. L. Korenev and I. A. Merkulov A. F. Ioffe Institute, St. Petersburg, Russia (Received 18 December 2000) Fine and

QUANTUM CRYPTOGRAPHY: Single Photons.

PubMed

Benjamin, S

2000-12-22

Quantum cryptography offers the potential of totally secure transfer of information, but as Benjamin discusses in this Perspective, its practical implementation hinges on being able to generate single photons (rather than two or more) at a time. Michler et al. show how this condition can be met in a quantum dot microdisk structure. Single molecules were also recently shown to allow controlled single-photon emission.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1983-01-01

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots.

PubMed

Bracker, A S; Stinaff, E A; Gammon, D; Ware, M E; Tischler, J G; Shabaev, A; Efros, Al L; Park, D; Gershoni, D; Korenev, V L; Merkulov, I A

2005-02-04

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

NASA Astrophysics Data System (ADS)

Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

2005-02-01

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

Donor-impurity-related optical response and electron Raman scattering in GaAs cone-like quantum dots

NASA Astrophysics Data System (ADS)

Gil-Corrales, A.; Morales, A. L.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.

2017-02-01

The donor-impurity-related optical absorption, relative refractive index changes, and Raman scattering in GaAs cone-like quantum dots are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The study involves 1 s -like, 2px-like, and 2pz-like states. The conical structure is chosen in such a way that the cone height is large enough in comparison with the base radius thus allowing the use a quasi-analytic solution of the uncorrelated Schrödinger-like electron states.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zech, E. S.; Chang, A. S.; Martin, A. J.

2013-08-19

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

NASA Astrophysics Data System (ADS)

Ohori, Daisuke; Fukuyama, Atsuhiko; Sakai, Kentaro; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Ikari, Tetsuo

2017-05-01

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from as-etched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillar-based optoelectronic devices such as NP laser diodes.

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu

2015-06-24

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. Themore » device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.« less

Single photon quantum cryptography.

PubMed

Beveratos, Alexios; Brouri, Rosa; Gacoin, Thierry; Villing, André; Poizat, Jean-Philippe; Grangier, Philippe

2002-10-28

We report the full implementation of a quantum cryptography protocol using a stream of single photon pulses generated by a stable and efficient source operating at room temperature. The single photon pulses are emitted on demand by a single nitrogen-vacancy color center in a diamond nanocrystal. The quantum bit error rate is less that 4.6% and the secure bit rate is 7700 bits/s. The overall performances of our system reaches a domain where single photons have a measurable advantage over an equivalent system based on attenuated light pulses.

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.

PubMed

Chen, Hung-Ling; Himwas, Chalermchai; Scaccabarozzi, Andrea; Rale, Pierre; Oehler, Fabrice; Lemaître, Aristide; Lombez, Laurent; Guillemoles, Jean-François; Tchernycheva, Maria; Harmand, Jean-Christophe; Cattoni, Andrea; Collin, Stéphane

2017-11-08

We present an effective method of determining the doping level in n-type III-V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein-Moss shift) and the broadening of luminescence spectra are signatures of increased electron densities. They are compared to the CL spectra of calibrated Si-doped GaAs layers, whose doping levels are determined by Hall measurements. We apply the generalized Planck's law to fit the whole spectra, taking into account the electron occupation in the conduction band, the bandgap narrowing, and band tails. The electron Fermi levels are used to determine the free electron concentrations, and we infer nanowire doping of 6 × 10 17 to 1 × 10 18  cm -3 . These results show that cathodoluminescence provides a robust way to probe carrier concentrations in semiconductors with the possibility of mapping spatial inhomogeneities at the nanoscale.

High purity low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1982-01-01

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel.

PubMed

Pelc, Jason S; Yu, Leo; De Greve, Kristiaan; McMahon, Peter L; Natarajan, Chandra M; Esfandyarpour, Vahid; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Yamamoto, Yoshihisa; Fejer, M M

2012-12-03

Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm using a fiber-coupled periodically poled lithium niobate waveguide and a 2.2-μm pulsed pump laser. The single-photon character of the quantum dot emission is preserved during the downconversion process: we measure a cross-correlation g(2)(τ = 0) = 0.17 using resonant excitation of the quantum dot. We show that the downconversion interface is fully compatible with coherent optical control of the quantum dot electron spin through the observation of Rabi oscillations in the downconverted photon counts. These results represent a critical step towards a long-distance hybrid quantum network in which subsystems operating at different wavelengths are connected through quantum frequency conversion devices and 1.5-μm quantum channels.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.

PubMed

Broderick, Christopher A; Jin, Shirong; Marko, Igor P; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L; Stolz, Wolfgang; Rorison, Judy M; O'Reilly, Eoin P; Volz, Kerstin; Sweeney, Stephen J

2017-04-19

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs 1-x Bi x /GaN y As 1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs 0.967 Bi 0.033 /GaN 0.062 As 0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

NASA Astrophysics Data System (ADS)

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O'Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-04-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1-xBix/GaNyAs1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

A single-atom quantum memory.

PubMed

Specht, Holger P; Nölleke, Christian; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

2011-05-12

The faithful storage of a quantum bit (qubit) of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must be able to receive and recreate the photonic qubit; additionally, it must store an unknown quantum state of light better than any classical device. So far, these two requirements have been met only by ensembles of material particles that store the information in collective excitations. Recent developments, however, have paved the way for an approach in which the information exchange occurs between single quanta of light and matter. This single-particle approach allows the material qubit to be addressed, which has fundamental advantages for realistic implementations. First, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection; this can be used to combat inevitable losses and finite efficiencies. Second, it allows for individual qubit manipulations, opening up avenues for in situ processing of the stored quantum information. Here we demonstrate the most fundamental implementation of such a quantum memory, by mapping arbitrary polarization states of light into and out of a single atom trapped inside an optical cavity. The memory performance is tested with weak coherent pulses and analysed using full quantum process tomography. The average fidelity is measured to be 93%, and low decoherence rates result in qubit coherence times exceeding 180  microseconds. This makes our system a versatile quantum node with excellent prospects for applications in optical quantum gates and quantum repeaters.

Comparative research on activation technique for GaAs photocathodes

NASA Astrophysics Data System (ADS)

Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

2012-03-01

The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot.

PubMed

Kawakami, E; Scarlino, P; Ward, D R; Braakman, F R; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, M A; Vandersypen, L M K

2014-09-01

Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here, we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in the single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, a Ramsey decay timescale of 1 μs is observed, almost two orders of magnitude longer than the intrinsic timescales in GaAs quantum dots, whereas gate operation times are comparable to those reported in GaAs. The spin echo decay time is ~40 μs, both with one and four echo pulses, possibly limited by intervalley scattering. These advances strongly improve the prospects for quantum information processing based on quantum dots.

Type II GaSb quantum ring solar cells under concentrated sunlight.

PubMed

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, Matthias, E-mail: m.paul@ihfg.uni-stuttgart.de; Kettler, Jan; Zeuner, Katharina

By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

High-performance semiconductor quantum-dot single-photon sources

NASA Astrophysics Data System (ADS)

Senellart, Pascale; Solomon, Glenn; White, Andrew

2017-11-01

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Single-server blind quantum computation with quantum circuit model

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Donor impurity-related photoionization cross section in GaAs cone-like quantum dots under applied electric field

NASA Astrophysics Data System (ADS)

Iqraoun, E.; Sali, A.; Rezzouk, A.; Feddi, E.; Dujardin, F.; Mora-Ramos, M. E.; Duque, C. A.

2017-06-01

The donor impurity-related electron states in GaAs cone-like quantum dots under the influence of an externally applied static electric field are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The uncorrelated Schrödinger-like electron states are obtained in quasi-analytical form and the entire electron-impurity correlated states are used to calculate the photoionisation cross section. Results for the electron state energies and the photoionisation cross section are reported as functions of the main geometrical parameters of the cone-like structures as well as of the electric field strength.

Study of effects of size and Ga mole content of In1-xGax As / GaAs quantum ring on excitonic properties using the variational calculation

NASA Astrophysics Data System (ADS)

Ben Mansour, Afef; Kehili, Mohamed Souhail; Melliti, Adnen; Maaref, Mohamed Ali

2017-10-01

This work aims to calculate the energy spectrum of semiconductor In1-xGax As / GaAs Quantum Ring (QR) using a three-dimensional model. The latter is modeled by a truncated torus residing on a thin In1-xWLGaxWL As wetting layer (WL). The main novelty of this work is to calculate electron and hole ground state energy using a variational method. The lattice-mismatch strain effect and the charge carrier confinement profile were considered in the calculation. For electron, the energy dependence of the effective mass was taken into account in solving the Schrödinger equation using the single band effective mass approximation. Moreover, variational estimate of the excitonic binding energy and the oscillator strength as a function of the QR radial width and Ga mole content were reported.

Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalentyeva, I. L.; Vikhrova, O. V., E-mail: istery@rambler.ru; Danilov, Yu. A.

2016-11-15

The effects of isochronal thermal annealing (at 325–725°C) on the radiative properties of InGaAs/GaAs nanoheterostructures containing a low-temperature GaAs layer δ-doped with Mn grown by laser deposition are studied. A decrease in the photoluminescence intensity and increase in the ground transition energy are observed upon thermal impact for quantum wells located near the low-temperature GaAs layer. The distribution of Mn atoms in the initial and annealed structures is obtained by secondary-ion mass spectrometry. A qualitative model of the observed effects of thermal annealing on the radiative properties of the structures is discussed; this model takes into account two main processes:more » diffusion of point defects (primarily gallium vacancies) from the GaAs coating layer deep into the structure and Mn diffusion in both directions by the dissociation mechanism. Magnetization studies show that, as a result of thermal annealing, an increase in the proportion of the ferromagnetic phase at room temperature (presumably, MnAs clusters) in the low-temperature GaAs coating layer takes place.« less

Nuclear spin warm up in bulk n -GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

2016-08-01

We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

PubMed Central

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O’Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-01-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications. PMID:28422129

Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers.

PubMed

Jahan, K Luhluh; Boda, A; Shankar, I V; Raju, Ch Narasimha; Chatterjee, Ashok

2018-03-22

The problem of an exciton trapped in a Gaussian quantum dot (QD) of GaAs is studied in both two and three dimensions in the presence of an external magnetic field using the Ritz variational method, the 1/N expansion method and the shifted 1/N expansion method. The ground state energy and the binding energy of the exciton are obtained as a function of the quantum dot size, confinement strength and the magnetic field and compared with those available in the literature. While the variational method gives the upper bound to the ground state energy, the 1/N expansion method gives the lower bound. The results obtained from the shifted 1/N expansion method are shown to match very well with those obtained from the exact diagonalization technique. The variation of the exciton size and the oscillator strength of the exciton are also studied as a function of the size of the quantum dot. The excited states of the exciton are computed using the shifted 1/N expansion method and it is suggested that a given number of stable excitonic bound states can be realized in a quantum dot by tuning the quantum dot parameters. This can open up the possibility of having quantum dot lasers using excitonic states.

Interferometric Quantum-Nondemolition Single-Photon Detectors

NASA Technical Reports Server (NTRS)

Kok, Peter; Lee, Hwang; Dowling, Jonathan

2007-01-01

Two interferometric quantum-nondemolition (QND) devices have been proposed: (1) a polarization-independent device and (2) a polarization-preserving device. The prolarization-independent device works on an input state of up to two photons, whereas the polarization-preserving device works on a superposition of vacuum and single- photon states. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode would also be populated by a single photon. Like other QND devices, the proposed devices are potentially useful for a variety of applications, including such areas of NASA interest as quantum computing, quantum communication, detection of gravity waves, as well as pedagogical demonstrations of the quantum nature of light. Many protocols in quantum computation and quantum communication require the possibility of detecting a photon without destroying it. The only prior single- photon-detecting QND device is based on quantum electrodynamics in a resonant cavity and, as such, it depends on the photon frequency. Moreover, the prior device can distinguish only between one photon and no photon. The proposed interferometric QND devices would not depend on frequency and could distinguish between (a) one photon and (b) zero or two photons. The first proposed device is depicted schematically in Figure 1. The input electromagnetic mode would be a superposition of a zero-, a one-, and a two-photon quantum state. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode also would be populated by a single photon.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

NASA Astrophysics Data System (ADS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-08-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghali, Mohsen; Laboratory of Nanophotonics, Physics Department, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh; Ohno, Yuzo

2015-09-21

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, untilmore » the FSS vanished as F approached 30 kV/cm.« less

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

Gate-Sensing the Potential Landscape of a GaAs Two-Dimensional Electron Gas

NASA Astrophysics Data System (ADS)

Croot, Xanthe; Mahoney, Alice; Pauka, Sebastian; Colless, James; Reilly, David; Watson, John; Fallahi, Saeed; Gardner, Geoff; Manfra, Michael; Lu, Hong; Gossard, Arthur

In situ dispersive gate sensors hold potential as a means of enabling the scalable readout of quantum dot arrays. Sensitive to quantum capacitance, dispersive sensors have been used to detect inter- and intra-dot transitions in GaAs double quantum dots, and can distinguish the spin states of singlet triplet qubits. In addition, the gate-sensing technique is likely of value in probing the physics of Majorana zero modes in nanowire devices. Beyond the readout signatures associated with charge and spin configurations of qubits, gate-sensing is sensitive to trapped charge in the potential landscape. Here, we report gate-sensing signals arising from tunnelling of electrons between puddles of trapped charge in a GaAs 2DEG. We examine these signals in a family of different devices with varying mobilities, and as a function of temperature and bias. Implications for qubit readout using the gate-sensing technique are discussed.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less

High purity, low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1983-01-01

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Entanglement and quantum superposition induced by a single photon

NASA Astrophysics Data System (ADS)

Lü, Xin-You; Zhu, Gui-Lei; Zheng, Li-Li; Wu, Ying

2018-03-01

We predict the occurrence of single-photon-induced entanglement and quantum superposition in a hybrid quantum model, introducing an optomechanical coupling into the Rabi model. Originally, it comes from the photon-dependent quantum property of the ground state featured by the proposed hybrid model. It is associated with a single-photon-induced quantum phase transition, and is immune to the A2 term of the spin-field interaction. Moreover, the obtained quantum superposition state is actually a squeezed cat state, which can significantly enhance precision in quantum metrology. This work offers an approach to manipulate entanglement and quantum superposition with a single photon, which might have potential applications in the engineering of new single-photon quantum devices, and also fundamentally broaden the regime of cavity QED.

Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241.

DTIC Science & Technology

1992-09-14

AIGaAs-GaAs QUANTUM WELLS GROWN ON LOW TEMPERATURE GaAs 239 Y. Hwang, D. Zhang, T. Zhang, M. Mytych, and R.M. Kolbas MOLECULAR BEAM EPITAXY OF LOW...GaA/ quantum wells : 24i howvever, in our case. AIks layers were not introduced. Formation (if these rows is most prolf,.+l influenced hb the diffusimon...regions. Preliminary investigations into this method have been performed using GaAs quantum wells between thick AIGaAs barriers as shown in Fig. 7. This

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Realization of a Cascaded Quantum System: Heralded Absorption of a Single Photon Qubit by a Single-Electron Charged Quantum Dot.

PubMed

Delteil, Aymeric; Sun, Zhe; Fält, Stefan; Imamoğlu, Atac

2017-04-28

Photonic losses pose a major limitation for the implementation of a quantum state transfer between nodes of a quantum network. A measurement that heralds a successful transfer without revealing any information about the qubit may alleviate this limitation. Here, we demonstrate the heralded absorption of a single photonic qubit, generated by a single neutral quantum dot, by a single-electron charged quantum dot that is located 5 m away. The transfer of quantum information to the spin degree of freedom takes place upon the emission of a photon; for a properly chosen or prepared quantum dot, the detection of this photon yields no information about the qubit. We show that this process can be combined with local operations optically performed on the destination node by measuring classical correlations between the absorbed photon color and the final state of the electron spin. Our work suggests alternative avenues for the realization of quantum information protocols based on cascaded quantum systems.

Multidimensional Coherent Spectroscopy of GaAs Excitons and Quantum Microcavity Polaritons

NASA Astrophysics Data System (ADS)

Wilmer, Brian L.

Light-matter interactions associated with excitons and exciton related complexes are explored in bulk GaAs and semiconductor microcavities using multidimensional coherent spectroscopy (MDCS). This approach provides rich spectra determining quantum excitation pathways, structural influences on the excitons, and coherence times. Polarization, excitation density, and temperature-dependent MDCS is performed on excitons in strained bulk GaAs layers, probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole and light-hole valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the heavy-/light- hole exciton peak splitting, induces an asymmetry in the off-diagonal interaction coherences, increases the difference in the heavy- and light- hole exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound light-, heavy- and mixed- hole biexcitons. 2DCS maps the anticrossing associated with normal mode splitting in a semiconductor microcavity. For a detuning range near zero, it is observed that there are two diagonal features related to the intra-action of exciton-polariton branches and two off-diagonal features related to coherent interaction between the polaritons. At negative detuning, the line shape properties of the diagonal intra-action features are distinguishable and can be associated with cavity-like and exciton-like modes. A biexcitonic companion feature is observed, shifted from the exciton feature by the biexciton binding energy. Closer to zero detuning, all features are enhanced and

Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm.

PubMed

Godfrin, C; Ferhat, A; Ballou, R; Klyatskaya, S; Ruben, M; Wernsdorfer, W; Balestro, F

2017-11-03

Quantum algorithms use the principles of quantum mechanics, such as, for example, quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimization, simulation, and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3/2 spin carried by a Tb ion sitting in a single molecular magnet transistor. The coherent manipulation of this multilevel quantum system (qudit) is achieved by means of electric fields only. Grover's search algorithm is implemented by constructing a quantum database via a multilevel Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multilevel quantum system with nonequal spaced energy levels, opening the way to novel quantum search algorithms.

Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm

NASA Astrophysics Data System (ADS)

Godfrin, C.; Ferhat, A.; Ballou, R.; Klyatskaya, S.; Ruben, M.; Wernsdorfer, W.; Balestro, F.

2017-11-01

Quantum algorithms use the principles of quantum mechanics, such as, for example, quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimization, simulation, and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3 /2 spin carried by a Tb ion sitting in a single molecular magnet transistor. The coherent manipulation of this multilevel quantum system (qudit) is achieved by means of electric fields only. Grover's search algorithm is implemented by constructing a quantum database via a multilevel Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multilevel quantum system with nonequal spaced energy levels, opening the way to novel quantum search algorithms.

Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

NASA Astrophysics Data System (ADS)

He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

2017-08-01

Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Simon, John; Schulte, Kevin L.; Jain, Nikhil; ...

2016-10-19

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued improvement of the performance of HVPE-grown single-junction GaAs solar cells. We show over an order of magnitude improvement in the interface recombination velocity between GaAs and GaInP layers through the elimination of growth interrupts, leading to increased short-circuit current density and open-circuit voltage compared with cells with interrupts. One-sun conversion efficiencies as high as 20.6% were achieved with this improved growth process. Solar cells grown in an inverted configuration that were removed frommore » the substrate showed nearly identical performance to on-wafer cells, demonstrating the viability of HVPE to be used together with conventional wafer reuse techniques for further cost reduction. As a result, these devices utilized multiple heterointerfaces, showing the potential of HVPE for the growth of complex and high-quality III-V devices.« less

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

2017-11-01

The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Technical Reports Server (NTRS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-01-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Astrophysics Data System (ADS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-11-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Semi-quantum Dialogue Based on Single Photons

NASA Astrophysics Data System (ADS)

Ye, Tian-Yu; Ye, Chong-Qiang

2018-02-01

In this paper, we propose two semi-quantum dialogue (SQD) protocols by using single photons as the quantum carriers, where one requires the classical party to possess the measurement capability and the other does not have this requirement. The security toward active attacks from an outside Eve in the first SQD protocol is guaranteed by the complete robustness of present semi-quantum key distribution (SQKD) protocols, the classical one-time pad encryption, the classical party's randomization operation and the decoy photon technology. The information leakage problem of the first SQD protocol is overcome by the classical party' classical basis measurements on the single photons carrying messages which makes him share their initial states with the quantum party. The security toward active attacks from Eve in the second SQD protocol is guaranteed by the classical party's randomization operation, the complete robustness of present SQKD protocol and the classical one-time pad encryption. The information leakage problem of the second SQD protocol is overcome by the quantum party' classical basis measurements on each two adjacent single photons carrying messages which makes her share their initial states with the classical party. Compared with the traditional information leakage resistant QD protocols, the advantage of the proposed SQD protocols lies in that they only require one party to have quantum capabilities. Compared with the existing SQD protocol, the advantage of the proposed SQD protocols lies in that they only employ single photons rather than two-photon entangled states as the quantum carriers. The proposed SQD protocols can be implemented with present quantum technologies.

Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Morioka, N.; Mori, S.

2014-02-07

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. Themore » relationship between effective mass and bulk band structure is discussed.« less

Tuning Single Quantum Dot Emission with a Micromirror.

PubMed

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots

NASA Astrophysics Data System (ADS)

Chekhovich, E. A.; Ulhaq, A.; Zallo, E.; Ding, F.; Schmidt, O. G.; Skolnick, M. S.

2017-10-01

Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid-state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC (ref. ) reaches 99% and beyond, it has been limited to 50-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coherent `dark' nuclear spin states but experimental verification is lacking, especially due to the poor accuracy of polarization degree measurements. Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new approach enabled by manipulation of the nuclear spin states with radiofrequency pulses. Polarizations up to 80% are observed--the highest reported so far for optical cooling in quantum dots. This value is still not limited by nuclear coherence effects. Instead we find that optically cooled nuclei are well described within a classical spin temperature framework. Our findings unlock a route for further progress towards quantum dot electron spin qubits where deep cooling of the mesoscopic nuclear spin ensemble is used to achieve long qubit coherence. Moreover, GaAs hyperfine material constants are measured here experimentally for the first time.

Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs

NASA Astrophysics Data System (ADS)

Junno, B.; Paulsson, G.; Miller, M.; Samuelson, L.

1994-03-01

InGaAs quantum wells (QWs) were grown in a chemical beam epitaxy (CBE) machine with trimethylindium (TMI), triethylgallium (TEG) and tertiarybutylarsine (TBA) as precursors. Growth was monitored in-situ by reflectance difference (RD) and reflection high energy electron diffraction (RHEED), on both flat and vicinal (2° off in the <111> A direction) (001)GaAs substrates. The RD was monitored at 632.8 nm. At this wavelength the RD signal from a GaAs surface is primarily related to the absorption by Ga dimers. When InGaAs had been grown, both the average RD signal and the amplitude of the RD oscillations for the subsequent growth of GaAs increased significantly, compared to GaAs growth on GaAs. This In influence was found to persist even after the growth of 20-30 ML of pure GaAs. As a result we were able to monitor growth oscillations with RD and RHEED simultaneously during growth of quantum wells of InGaAs in GaAs. As a conclusion to these observations we suggest that the group III dimer bond concentration, detected in the RD signal, increases.

Robust, frequency-stable and accurate mid-IR laser spectrometer based on frequency comb metrology of quantum cascade lasers up-converted in orientation-patterned GaAs.

PubMed

Hansen, Michael G; Ernsting, Ingo; Vasilyev, Sergey V; Grisard, Arnaud; Lallier, Eric; Gérard, Bruno; Schiller, Stephan

2013-11-04

We demonstrate a robust and simple method for measurement, stabilization and tuning of the frequency of cw mid-infrared (MIR) lasers, in particular of quantum cascade lasers. The proof of principle is performed with a quantum cascade laser at 5.4 µm, which is upconverted to 1.2 µm by sum-frequency generation in orientation-patterned GaAs with the output of a standard high-power cw 1.5 µm fiber laser. Both the 1.2 µm and the 1.5 µm waves are measured by a standard Er:fiber frequency comb. Frequency measurement at the 100 kHz-level, stabilization to sub-10 kHz level, controlled frequency tuning and long-term stability are demonstrated.

Solid-phase diffusion mechanism for GaAs nanowire growth.

PubMed

Persson, Ann I; Larsson, Magnus W; Stenström, Stig; Ohlsson, B Jonas; Samuelson, Lars; Wallenberg, L Reine

2004-10-01

Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions, were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode and the single-electron transistor. The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism, based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

PubMed Central

Hussain, Sajid; Pozzato, Alessandro; Tormen, Massimo; Zannier, Valentina; Biasiol, Giorgio

2016-01-01

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots. PMID:28773333

Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

2015-09-28

We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

NASA Astrophysics Data System (ADS)

Gerhardt, Stefan; Iles-Smith, Jake; McCutcheon, Dara P. S.; He, Yu-Ming; Unsleber, Sebastian; Betzold, Simon; Gregersen, Niels; Mørk, Jesper; Höfling, Sven; Schneider, Christian

2018-05-01

We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitted photons, and a corresponding indistinguishability of I =(99.6 -1.4+0.4)% . For larger pulse separations, quasiresonant excitation conditions, increasing pump power, or with increasing temperature, the interference contrast is progressively and notably reduced. We present a systematic study of the relevant dephasing mechanisms and explain our results in the framework of a microscopic model of our system. For strictly resonant excitation, we show that photon indistinguishability is independent of pump power, but strongly influenced by virtual phonon-assisted processes which are not evident in excitonic Rabi oscillations.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

PubMed

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Amplification in Double Heterostructure GaAs Lasers.

DTIC Science & Technology

1981-03-15

done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Weiquan; Becker, Jacob; Liu, Shi

2014-05-28

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

Single-ion quantum lock-in amplifier.

PubMed

Kotler, Shlomi; Akerman, Nitzan; Glickman, Yinnon; Keselman, Anna; Ozeri, Roee

2011-05-05

Quantum metrology uses tools from quantum information science to improve measurement signal-to-noise ratios. The challenge is to increase sensitivity while reducing susceptibility to noise, tasks that are often in conflict. Lock-in measurement is a detection scheme designed to overcome this difficulty by spectrally separating signal from noise. Here we report on the implementation of a quantum analogue to the classical lock-in amplifier. All the lock-in operations--modulation, detection and mixing--are performed through the application of non-commuting quantum operators to the electronic spin state of a single, trapped Sr(+) ion. We significantly increase its sensitivity to external fields while extending phase coherence by three orders of magnitude, to more than one second. Using this technique, we measure frequency shifts with a sensitivity of 0.42 Hz Hz(-1/2) (corresponding to a magnetic field measurement sensitivity of 15 pT Hz(-1/2)), obtaining an uncertainty of less than 10 mHz (350 fT) after 3,720 seconds of averaging. These sensitivities are limited by quantum projection noise and improve on other single-spin probe technologies by two orders of magnitude. Our reported sensitivity is sufficient for the measurement of parity non-conservation, as well as the detection of the magnetic field of a single electronic spin one micrometre from an ion detector with nanometre resolution. As a first application, we perform light shift spectroscopy of a narrow optical quadrupole transition. Finally, we emphasize that the quantum lock-in technique is generic and can potentially enhance the sensitivity of any quantum sensor. ©2011 Macmillan Publishers Limited. All rights reserved

Complete quantum control of a single quantum dot spin using ultrafast optical pulses.

PubMed

Press, David; Ladd, Thaddeus D; Zhang, Bingyang; Yamamoto, Yoshihisa

2008-11-13

A basic requirement for quantum information processing systems is the ability to completely control the state of a single qubit. For qubits based on electron spin, a universal single-qubit gate is realized by a rotation of the spin by any angle about an arbitrary axis. Driven, coherent Rabi oscillations between two spin states can be used to demonstrate control of the rotation angle. Ramsey interference, produced by two coherent spin rotations separated by a variable time delay, demonstrates control over the axis of rotation. Full quantum control of an electron spin in a quantum dot has previously been demonstrated using resonant radio-frequency pulses that require many spin precession periods. However, optical manipulation of the spin allows quantum control on a picosecond or femtosecond timescale, permitting an arbitrary rotation to be completed within one spin precession period. Recent work in optical single-spin control has demonstrated the initialization of a spin state in a quantum dot, as well as the ultrafast manipulation of coherence in a largely unpolarized single-spin state. Here we demonstrate complete coherent control over an initialized electron spin state in a quantum dot using picosecond optical pulses. First we vary the intensity of a single optical pulse to observe over six Rabi oscillations between the two spin states; then we apply two sequential pulses to observe high-contrast Ramsey interference. Such a two-pulse sequence realizes an arbitrary single-qubit gate completed on a picosecond timescale. Along with the spin initialization and final projective measurement of the spin state, these results demonstrate a complete set of all-optical single-qubit operations.

Isotopically enhanced triple-quantum-dot qubit

PubMed Central

Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.

2015-01-01

Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186

Quantum Yield Heterogeneity among Single Nonblinking Quantum Dots Revealed by Atomic Structure-Quantum Optics Correlation

DOE PAGES

Orfield, Noah J.; McBride, James R.; Wang, Feng; ...

2016-02-05

Physical variations in colloidal nanostructures give rise to heterogeneity in expressed optical behavior. This correlation between nanoscale structure and function demands interrogation of both atomic structure and photophysics at the level of single nanostructures to be fully understood. In this paper, by conducting detailed analyses of fine atomic structure, chemical composition, and time-resolved single-photon photoluminescence data for the same individual nanocrystals, we reveal inhomogeneity in the quantum yields of single nonblinking “giant” CdSe/CdS core/shell quantum dots (g-QDs). We find that each g-QD possesses distinctive single exciton and biexciton quantum yields that result mainly from variations in the degree of charging,more » rather than from volume or structure inhomogeneity. We further establish that there is a very limited nonemissive “dark” fraction (<2%) among the studied g-QDs and present direct evidence that the g-QD core must lack inorganic passivation for the g-QD to be “dark”. Finally and therefore, in contrast to conventional QDs, ensemble photoluminescence quantum yield is principally defined by charging processes rather than the existence of dark g-QDs.« less

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

PubMed

Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

2016-03-01

The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

NASA Astrophysics Data System (ADS)

Eugenio-López, Eric; Alejandro Mercado-Ornelas, Christian; Kisan Patil, Pallavi; Cortes-Mestizo, Irving Eduardo; Ángel Espinoza-Figueroa, José; Gorbatchev, Andrei Yu; Shimomura, Satoshi; Ithsmel Espinosa-Vega, Leticia; Méndez-García, Víctor Hugo

2018-02-01

The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along [\\bar{1}13], while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.

Universal quantum gates for Single Cooper Pair Box based quantum computing

NASA Technical Reports Server (NTRS)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.

2013-09-14

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of amore » dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.« less

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter.

PubMed

Zaske, Sebastian; Lenhard, Andreas; Keßler, Christian A; Kettler, Jan; Hepp, Christian; Arend, Carsten; Albrecht, Roland; Schulz, Wolfgang-Michael; Jetter, Michael; Michler, Peter; Becher, Christoph

2012-10-05

We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.

Quantum-limited evanescent single molecule sensing.

NASA Astrophysics Data System (ADS)

Bowen, Warwick; Mauranyapin, Nicolas; Madsen, Lars; Taylor, Michael; Waleed, Muhammad

Sensors that are able to detect and track single unlabeled biomolecules are an important tool both to understand biomolecular dynamics and interactions, and for medical diagnostics operating at their ultimate detection limits. Recently, exceptional sensitivity has been achieved using the strongly enhanced evanescent fields provided by optical microcavities and plasmonic resonators. However, at high field intensities photodamage to the biological specimen becomes increasingly problematic. Here, we introduce a new approach that combines dark field illumination and heterodyne detection in an optical nanofibre. This allows operation at the fundamental precision limit introduced by quantisation of light. We achieve state-of-the-art sensitivity with a four order-of-magnitude reduction in optical intensity. This enables quantum noise limited tracking of single biomolecules as small as 3.5 nm and surface-molecule interactions to be montored over extended periods. By achieving quantum noise limited precision, our approach provides a pathway towards quantum-enhanced single-molecule biosensors. We acknkowledge financial support from AFOSR and AOARD.

Spectroscopy of Single AlInAs Quantum Dots

NASA Astrophysics Data System (ADS)

Derebezov, I. A.; Gaisler, A. V.; Gaisler, V. A.; Dmitriev, D. V.; Toropov, A. I.; Kozhukhov, A. S.; Shcheglov, D. V.; Latyshev, A. V.; Aseev, A. L.

2018-03-01

A system of quantum dots based on Al x In1- x As/Al y Ga1- y As solid solutions is investigated. The use of Al x In1- x As wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1- x As single quantum dots grown by the Stranski-Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown-Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1- x As quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on Al x In1- x As quantum dots.

The effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity

NASA Astrophysics Data System (ADS)

Owji, Erfan; Keshavarz, Alireza; Mokhtari, Hosein

2016-10-01

In this paper, the effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity are investigated. For this purpose, the effects of temperature, pressure and quantum dot size on the band gap energy, effective mass, and dielectric constant are studied. The eigenenergies and eigenstates for valence and conduction band are calculated by using Runge-Kutta numerical method. Results show that changes in the temperature, pressure and size lead to the alteration of the band gap energy and effective mass. Also, increasing the temperature redshifts the optical gain peak and at special temperature ranges lead to increasing or decreasing of it. Further, by reducing the size, temperature-dependent of optical gain is decreased. Additionally, enhancing of the hydrostatic pressure blueshifts the peak of optical gain, and its behavior as a function of pressure which depends on the size. Finally, increasing the radius rises the redshifts of the peak of optical gain.

Dual-gate GaAs FET switches

NASA Astrophysics Data System (ADS)

Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

1981-02-01

A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

Size and shape dependent optical properties of InAs quantum dots

NASA Astrophysics Data System (ADS)

Imran, Ali; Jiang, Jianliang; Eric, Deborah; Yousaf, Muhammad

2018-01-01

In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

Critical layer thickness in In/sub 0. 2/Ga/sub 0. 8/As/GaAs single strained quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fritz, I.J.; Gourley, P.L.; Dawson, L.R.

1987-09-28

We report accurate determination of the critical layer thickness (CLT) for single strained-layer epitaxy in the InGaAs/GaAs system. Our samples were molecular beam epitaxially grown, selectively doped, single quantum well structures comprising a strained In/sub 0.2/Ga/sub 0.8/As layer imbedded in GaAs. We determined the CLT by two sensitive techniques: Hall-effect measurements at 77 K and photoluminescence microscopy. Both techniques indicate a CLT of about 20 nm. This value is close to that determined previously (--15 nm) for comparable strained-layer superlattices, but considerably less than the value of --45 nm suggested by recent x-ray rocking-curve measurements. We show by a simplemore » calculation that photoluminescence microscopy is more than two orders of magnitude more sensitive to dislocations than x-ray diffraction. Our results re-emphasize the necessity of using high-sensitivity techniques for accurate determination of critical layer thicknesses.« less

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Electro-mechanical control of an on-chip optical beam splitter containing an embedded quantum emitter

NASA Astrophysics Data System (ADS)

Bishop, Z. K.; Foster, A. P.; Royall, B.; Bentham, C.; Clarke, E.; Skolnick, M. S.; Wilson, L. R.

2018-05-01

We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.

Electro-mechanical control of an on-chip optical beam splitter containing an embedded quantum emitter.

PubMed

Bishop, Z K; Foster, A P; Royall, B; Bentham, C; Clarke, E; Skolnick, M S; Wilson, L R

2018-05-01

We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electromechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.

Interface demarcation in GaAs by current pulsing

NASA Technical Reports Server (NTRS)

Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

1990-01-01

GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

PubMed

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Two-Way Communication with a Single Quantum Particle.

PubMed

Del Santo, Flavio; Dakić, Borivoje

2018-02-09

In this Letter we show that communication when restricted to a single information carrier (i.e., single particle) and finite speed of propagation is fundamentally limited for classical systems. On the other hand, quantum systems can surpass this limitation. We show that communication bounded to the exchange of a single quantum particle (in superposition of different spatial locations) can result in "two-way signaling," which is impossible in classical physics. We quantify the discrepancy between classical and quantum scenarios by the probability of winning a game played by distant players. We generalize our result to an arbitrary number of parties and we show that the probability of success is asymptotically decreasing to zero as the number of parties grows, for all classical strategies. In contrast, quantum strategy allows players to win the game with certainty.

Two-Way Communication with a Single Quantum Particle

NASA Astrophysics Data System (ADS)

Del Santo, Flavio; Dakić, Borivoje

2018-02-01

In this Letter we show that communication when restricted to a single information carrier (i.e., single particle) and finite speed of propagation is fundamentally limited for classical systems. On the other hand, quantum systems can surpass this limitation. We show that communication bounded to the exchange of a single quantum particle (in superposition of different spatial locations) can result in "two-way signaling," which is impossible in classical physics. We quantify the discrepancy between classical and quantum scenarios by the probability of winning a game played by distant players. We generalize our result to an arbitrary number of parties and we show that the probability of success is asymptotically decreasing to zero as the number of parties grows, for all classical strategies. In contrast, quantum strategy allows players to win the game with certainty.

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

well have been found to be critical in producing quality multi-quantum well structures. The effect of the GaAs interfacial layers has been investigated. It was determined that a phosphorus carry-over had a profound effect on the absorption edge of the InGaAs wells. It was shown that the phosphorus carry-over can be prevented with sufficiently thick GaAs transition layers. Preliminary results for GaAs p-in solar cells utilizing the improved MQWs are presented. In addition to investigating the utilization of quantum wells in the i-region of a GaAs p-i-n diode to improve the efficiency of multijunction solar cells, an investigation into the effect a single GaAs:Te doped quantum well has on the performance of high bandgap InxGa1- xP:Te/Al0.6Ga 0.4As:C tunnel junctions was investigated. The insertion of 30A of GaAs:Te at the junction interface resulted in a peak current of 1000A/cm2 and a voltage drop of ~3mV for 30A/cm2 (2000x concentration). The presence of this GaAs interfacial layer also improved the uniformity across the wafer. This architecture could be used within multijunction solar cells to extend the range of usable solar concentration with minimal voltage drop.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-01

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Observing single quantum trajectories of a superconducting quantum bit

NASA Astrophysics Data System (ADS)

Murch, K. W.; Weber, S. J.; Macklin, C.; Siddiqi, I.

2013-10-01

The length of time that a quantum system can exist in a superposition state is determined by how strongly it interacts with its environment. This interaction entangles the quantum state with the inherent fluctuations of the environment. If these fluctuations are not measured, the environment can be viewed as a source of noise, causing random evolution of the quantum system from an initially pure state into a statistical mixture--a process known as decoherence. However, by accurately measuring the environment in real time, the quantum system can be maintained in a pure state and its time evolution described by a `quantum trajectory' determined by the measurement outcome. Here we use weak measurements to monitor a microwave cavity containing a superconducting quantum bit (qubit), and track the individual quantum trajectories of the system. In this set-up, the environment is dominated by the fluctuations of a single electromagnetic mode of the cavity. Using a near-quantum-limited parametric amplifier, we selectively measure either the phase or the amplitude of the cavity field, and thereby confine trajectories to either the equator or a meridian of the Bloch sphere. We perform quantum state tomography at discrete times along the trajectory to verify that we have faithfully tracked the state of the quantum system as it diffuses on the surface of the Bloch sphere. Our results demonstrate that decoherence can be mitigated by environmental monitoring, and validate the foundation of quantum feedback approaches based on Bayesian statistics. Moreover, our experiments suggest a new means of implementing `quantum steering'--the harnessing of action at a distance to manipulate quantum states through measurement.

Observing single quantum trajectories of a superconducting quantum bit.

PubMed

Murch, K W; Weber, S J; Macklin, C; Siddiqi, I

2013-10-10

The length of time that a quantum system can exist in a superposition state is determined by how strongly it interacts with its environment. This interaction entangles the quantum state with the inherent fluctuations of the environment. If these fluctuations are not measured, the environment can be viewed as a source of noise, causing random evolution of the quantum system from an initially pure state into a statistical mixture--a process known as decoherence. However, by accurately measuring the environment in real time, the quantum system can be maintained in a pure state and its time evolution described by a 'quantum trajectory' determined by the measurement outcome. Here we use weak measurements to monitor a microwave cavity containing a superconducting quantum bit (qubit), and track the individual quantum trajectories of the system. In this set-up, the environment is dominated by the fluctuations of a single electromagnetic mode of the cavity. Using a near-quantum-limited parametric amplifier, we selectively measure either the phase or the amplitude of the cavity field, and thereby confine trajectories to either the equator or a meridian of the Bloch sphere. We perform quantum state tomography at discrete times along the trajectory to verify that we have faithfully tracked the state of the quantum system as it diffuses on the surface of the Bloch sphere. Our results demonstrate that decoherence can be mitigated by environmental monitoring, and validate the foundation of quantum feedback approaches based on Bayesian statistics. Moreover, our experiments suggest a new means of implementing 'quantum steering'--the harnessing of action at a distance to manipulate quantum states through measurement.

Morphological instability of GaAs (7 1 1)A: A transition between (1 0 0) and (5 1 1) terraces

NASA Astrophysics Data System (ADS)

Yazdanpanah, V. R.; Wang, Zh. M.; Salamo, G. J.

2005-06-01

We report on the use of reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) study that indicates that the GaAs (7 1 1)A is right at the transition between vicinal GaAs (1 0 0) and vicinal GaAs (5 1 1)A surfaces and that a variation of the As overpressure switches the surface morphology between the two vicinal surfaces. The steps on the vicinal (1 0 0) surface have a width of 1.5 nm creating a staircase surface with excellent possibilities for growth of quantum wells. As-rich conditions can be described by vicinal (5 1 1)A surfaces with a width of 3.5 nm. This surface could find applications as a template for quantum wire growth. The observation suggests that the transition between these two morphologies is understandable based on the increase in surface energy of a vicinal (1 0 0) surface as the step separation approaches the dimer reconstructed separation.

Sn nanothreads in GaAs: experiment and simulation

NASA Astrophysics Data System (ADS)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Experimental test of single-system steering and application to quantum communication

NASA Astrophysics Data System (ADS)

Liu, Zhao-Di; Sun, Yong-Nan; Cheng, Ze-Di; Xu, Xiao-Ye; Zhou, Zong-Quan; Chen, Geng; Li, Chuan-Feng; Guo, Guang-Can

2017-02-01

Einstein-Podolsky-Rosen (EPR) steering describes the ability to steer remotely quantum states of an entangled pair by measuring locally one of its particles. Here we report on an experimental demonstration of single-system steering. The application to quantum communication is also investigated. Single-system steering refers to steering of a single d -dimensional quantum system that can be used in a unifying picture to certify the reliability of tasks employed in both quantum communication and quantum computation. In our experiment, high-dimensional quantum states are implemented by encoding polarization and orbital angular momentum of photons with dimensionality of up to 12.

Spontaneous recombination current in InGaAs/GaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Woodbridge, K.

1990-10-08

We have studied the intrinsic factors which determine the threshold current and its temperature dependence in 160-A-wide In{sub 0.2}Ga{sub 0.8}As single well quantum lasers with GaAs barriers, grown by molecular beam epitaxy on GaAs substrates. By measuring the relative temperature dependence of the spontaneous emission intensity at threshold we show that radiative transitions between higher order ({ital n}=2,3) electron and heavy hole subbands make a significant contribution to the threshold current and its temperature sensitivity, even in devices where the laser transitions are between {ital n}=1 subbands. These higher transitions will also influence the dependence of threshold current and itsmore » temperature sensitivity on well width.« less

Quantum Logic with Cavity Photons From Single Atoms.

PubMed

Holleczek, Annemarie; Barter, Oliver; Rubenok, Allison; Dilley, Jerome; Nisbet-Jones, Peter B R; Langfahl-Klabes, Gunnar; Marshall, Graham D; Sparrow, Chris; O'Brien, Jeremy L; Poulios, Konstantinos; Kuhn, Axel; Matthews, Jonathan C F

2016-07-08

We demonstrate quantum logic using narrow linewidth photons that are produced with an a priori nonprobabilistic scheme from a single ^{87}Rb atom strongly coupled to a high-finesse cavity. We use a controlled-not gate integrated into a photonic chip to entangle these photons, and we observe nonclassical correlations between photon detection events separated by periods exceeding the travel time across the chip by 3 orders of magnitude. This enables quantum technology that will use the properties of both narrow-band single photon sources and integrated quantum photonics.

Operating single quantum emitters with a compact Stirling cryocooler.

PubMed

Schlehahn, A; Krüger, L; Gschrey, M; Schulze, J-H; Rodt, S; Strittmatter, A; Heindel, T; Reitzenstein, S

2015-01-01

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g((2))(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g((2))(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

Structural and electronic properties of isovalent boron atoms in GaAs

NASA Astrophysics Data System (ADS)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the <110 > directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2017-09-01

The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS

DTIC Science & Technology

2017-10-01

DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS UNIVERSITY OF SOUTHERN CALIFORNIA OCTOBER 2017 FINAL...SUBTITLE DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS 5a. CONTRACT NUMBER FA8750-15-C-0203 5b. GRANT NUMBER N/A 5c. PROGRAM...of this project was to investigate the state-of-the-art in design and optimization of single-flux quantum (SFQ) logic circuits, e.g., RSFQ and ERSFQ

Electronic structures of GaAs/AlxGa1-xAs quantum double rings

PubMed Central

Xia, Jian-Bai

2006-01-01

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

Optical studies of quantum confined nanostructures

NASA Astrophysics Data System (ADS)

Vamivakas, Anthony Nickolas

Recent advances in material growth techniques have led to the laboratory realization of quantum confined nanostructures. By engineering the geometry of these systems it is possible to tailor their optical, electrical and vibrational properties. We now envision integrated electronic and optical devices potentially harnessing quantum mechanical properties of photons, electrons or even phonons. The realization of these next generation devices requires parallel advances in both electrical and optical characterization techniques. In this dissertation we study the optical properties of both zero-dimensional (0D) InAs/GaAs semiconductor quantum dots (QDs) and one-dimensional (1D) single wall carbon nanotubes (SWNTs). We utilize high resolution optical microscopy and spectroscopy techniques to experimentally study both individual QDs and SWNTs. The effect of quantum confinement on light-matter interaction in SWNTs is theoretically investigated. InAs QDs grown by Stranski-Krastanow self-assembly are buried in a GaAs matrix. The planar barriers presented by the dielectric boundary between the GaAs and the host medium limits the optical access to the InAs QDs. Incorporating a numerical aperture increasing microlens (NAIL) into a fiber-based confocal microscope we demonstrate improved ability to couple photons to and from a single InAs QD. With such immersion lens techniques we measure a record 12% extinction of a far-field laser by a single InAs QD. Even typical QD extinction of 6% is visible using a dc power-meter without the need for phase sensitive lock-in detection. This experimental advance will make possible the study of single QDs interacting with engineered vector laser beams. In the optical characterization of SWNTs, one-phonon resonant Raman scattering is employed to measure a tube's electronic resonances and determine the physical diameter and chirality of the tube under study. Recent work has determined excitons dominate the optical response of semiconducting

Quantum Otto engine using a single ion and a single thermal bath

NASA Astrophysics Data System (ADS)

Biswas, Asoka; Chand, Suman

2016-05-01

Quantum heat engines employ a quantum system as the working fluid, that gives rise to large work efficiency, beyond the limit for classical heat engines. Existing proposals for implementing quantum heat engines require that the system interacts with the hot bath and the cold bath (both modelled as a classical system) in an alternative fashion and therefore assumes ability to switch off the interaction with the bath during a certain stage of the heat-cycle. However, it is not possible to decouple a quantum system from its always-on interaction with the bath without use of complex pulse sequences. It is also hard to identify two different baths at two different temperatures in quantum domain, that sequentially interact with the system. Here, we show how to implement a quantum Otto engine without requiring to decouple the bath in a sequential manner. This is done by considering a single thermal bath, coupled to a single trapped ion. The electronic degree of freedom of the ion is chosen as a two-level working fluid while the vibrational degree of freedom plays the role of the cold bath. Measuring the electronic state mimics the release of heat into the cold bath. Thus, our model is fully quantum and exhibits very large work efficiency, asymptotically close to unity.

Deterministic and storable single-photon source based on a quantum memory.

PubMed

Chen, Shuai; Chen, Yu-Ao; Strassel, Thorsten; Yuan, Zhen-Sheng; Zhao, Bo; Schmiedmayer, Jörg; Pan, Jian-Wei

2006-10-27

A single-photon source is realized with a cold atomic ensemble (87Rb atoms). A single excitation, written in an atomic quantum memory by Raman scattering of a laser pulse, is retrieved deterministically as a single photon at a predetermined time. It is shown that the production rate of single photons can be enhanced considerably by a feedback circuit while the single-photon quality is conserved. Such a single-photon source is well suited for future large-scale realization of quantum communication and linear optical quantum computation.

Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-04-01

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

PubMed

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Phonon-Assisted Two-Photon Interference from Remote Quantum Emitters.

PubMed

Reindl, Marcus; Jöns, Klaus D; Huber, Daniel; Schimpf, Christian; Huo, Yongheng; Zwiller, Val; Rastelli, Armando; Trotta, Rinaldo

2017-07-12

Photonic quantum technologies are on the verge of finding applications in everyday life with quantum cryptography and quantum simulators on the horizon. Extensive research has been carried out to identify suitable quantum emitters and single epitaxial quantum dots have emerged as near-optimal sources of bright, on-demand, highly indistinguishable single photons and entangled photon-pairs. In order to build up quantum networks, it is essential to interface remote quantum emitters. However, this is still an outstanding challenge, as the quantum states of dissimilar "artificial atoms" have to be prepared on-demand with high fidelity and the generated photons have to be made indistinguishable in all possible degrees of freedom. Here, we overcome this major obstacle and show an unprecedented two-photon interference (visibility of 51 ± 5%) from remote strain-tunable GaAs quantum dots emitting on-demand photon-pairs. We achieve this result by exploiting for the first time the full potential of a novel phonon-assisted two-photon excitation scheme, which allows for the generation of highly indistinguishable (visibility of 71 ± 9%) entangled photon-pairs (fidelity of 90 ± 2%), enables push-button biexciton state preparation (fidelity of 80 ± 2%) and outperforms conventional resonant two-photon excitation schemes in terms of robustness against environmental decoherence. Our results mark an important milestone for the practical realization of quantum repeaters and complex multiphoton entanglement experiments involving dissimilar artificial atoms.

Linear optical quantum computing in a single spatial mode.

PubMed

Humphreys, Peter C; Metcalf, Benjamin J; Spring, Justin B; Moore, Merritt; Jin, Xian-Min; Barbieri, Marco; Kolthammer, W Steven; Walmsley, Ian A

2013-10-11

We present a scheme for linear optical quantum computing using time-bin-encoded qubits in a single spatial mode. We show methods for single-qubit operations and heralded controlled-phase (cphase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn [Nature (London) 409, 46 (2001)] scheme. Our protocol is suited to currently available photonic devices and ideally allows arbitrary numbers of qubits to be encoded in the same spatial mode, demonstrating the potential for time-frequency modes to dramatically increase the quantum information capacity of fixed spatial resources. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84±0.07.

Operating single quantum emitters with a compact Stirling cryocooler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlehahn, A.; Krüger, L.; Gschrey, M.

2015-01-15

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, wemore » perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g{sup (2)}(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g{sup (2)}(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.« less

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

PubMed

Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun; Ko, Suk-Min; Cho, Yong-Hoon

2013-01-01

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Single-photon three-qubit quantum logic using spatial light modulators.

PubMed

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Quantum cryptography using single-particle entanglement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jae-Weon; Lee, Eok Kyun; Chung, Yong Wook

2003-07-01

A quantum cryptography scheme based on entanglement between a single-particle state and a vacuum state is proposed. The scheme utilizes linear optics devices to detect the superposition of the vacuum and single-particle states. Existence of an eavesdropper can be detected by using a variant of Bell's inequality.

Quantum interference of independently generated telecom-band single photons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Monika; Altepeter, Joseph B.; Huang, Yu-Ping

We report on high-visibility quantum interference of independently generated telecom O-band (1310 nm) single photons using standard single-mode fibers. The experimental data are shown to agree well with the results of simulations using a comprehensive quantum multimode theory without the need for any fitting parameter.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

PubMed

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Magneto-transport studies of a few hole GaAs double quantum dot in tilted magnetic fields

NASA Astrophysics Data System (ADS)

Studenikin, Sergei; Bogan, Alex; Tracy, Lisa; Gaudreau, Louis; Sachrajda, Andy; Korkusinski, Marek; Reno, John; Hargett, Terry

Compared to equivalent electron devices, single-hole spins interact weakly with lattice nuclear spins leading to extended quantum coherence times. This makes p-type Quantum Dots (QD) particularly attractive for practical quantum devices such as qubit circuits, quantum repeaters, quantum sensors etc. where long coherence time is required. Another property of holes is the possibility to tune their g-factor as a result of the strong anisotropy of the valance band. Hole g-factors can be conveniently tuned in situ from a large value to almost zero by tilting the magnetic field relative to the 2D hole gas surface normal. In this work we explore high-bias magneto-transport properties of a p-type double quantum dot (DQD) device fabricated from a GaAs/AlGaAs heterostructures using lateral split-gate technology. A charge detection technique is used to monitor number of holes and tune the p-DQD in a single hole regime around (1,1) and (2,0) occupation states where Pauli spin-blockaded transport is expected. Four states are identified in quantizing magnetic fields within the high-bias current stripe - three-fold triplet and a singlet which allows determining effective heavy hole g-factor as a function of the tilt angle from 90 to 0 degrees.

Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well

NASA Astrophysics Data System (ADS)

Kamburov, D.; Baldwin, K. W.; West, K. W.; Lyon, S.; Pfeiffer, L. N.; Pinczuk, A.

2017-06-01

We compare micro-photoluminescence (μPL) as a measure of the electron density in a clean, two-dimensional (2D) system confined in a GaAs quantum well (QW) to the standard magneto-transport technique. Our study explores the PL shape evolution across a number of molecular beam epitaxy-grown samples with different QW widths and 2D electron densities and notes its correspondence with the density obtained in magneto-transport measurements on these samples. We also measure the 2D density in a top-gated quantum well sample using both PL and transport and find that the two techniques agree to within a few percent over a wide range of gate voltages. We find that the PL measurements are sensitive to gate-induced 2D density changes on the order of 109 electrons/cm2. The spatial resolution of the PL density measurement in our experiments is 40 μm, which is already substantially better than the millimeter-scale resolution now possible in spatial density mapping using magneto-transport. Our results establish that μPL can be used as a reliable high spatial resolution technique for future contactless measurements of density variations in a 2D electron system.

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y.

2016-04-15

We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences ofmore » the PL characteristics are explained by the effects of the WL.« less

Microprocessor design for GaAs technology

NASA Astrophysics Data System (ADS)

Milutinovic, Veljko M.

Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry.

PubMed

Müller, M; Vural, H; Schneider, C; Rastelli, A; Schmidt, O G; Höfling, S; Michler, P

2017-06-23

Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.

PubMed

Hoang, Thang B; Akselrod, Gleb M; Mikkelsen, Maiken H

2016-01-13

Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be integrated for directional, room-temperature single photon emission rates exceeding 80 GHz.

Deterministic and robust generation of single photons from a single quantum dot with 99.5% indistinguishability using adiabatic rapid passage.

PubMed

Wei, Yu-Jia; He, Yu-Ming; Chen, Ming-Cheng; Hu, Yi-Nan; He, Yu; Wu, Dian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2014-11-12

Single photons are attractive candidates of quantum bits (qubits) for quantum computation and are the best messengers in quantum networks. Future scalable, fault-tolerant photonic quantum technologies demand both stringently high levels of photon indistinguishability and generation efficiency. Here, we demonstrate deterministic and robust generation of pulsed resonance fluorescence single photons from a single semiconductor quantum dot using adiabatic rapid passage, a method robust against fluctuation of driving pulse area and dipole moments of solid-state emitters. The emitted photons are background-free, have a vanishing two-photon emission probability of 0.3% and a raw (corrected) two-photon Hong-Ou-Mandel interference visibility of 97.9% (99.5%), reaching a precision that places single photons at the threshold for fault-tolerant surface-code quantum computing. This single-photon source can be readily scaled up to multiphoton entanglement and used for quantum metrology, boson sampling, and linear optical quantum computing.

Single-photon-level quantum image memory based on cold atomic ensembles

PubMed Central

Ding, Dong-Sheng; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2013-01-01

A quantum memory is a key component for quantum networks, which will enable the distribution of quantum information. Its successful development requires storage of single-photon light. Encoding photons with spatial shape through higher-dimensional states significantly increases their information-carrying capability and network capacity. However, constructing such quantum memories is challenging. Here we report the first experimental realization of a true single-photon-carrying orbital angular momentum stored via electromagnetically induced transparency in a cold atomic ensemble. Our experiments show that the non-classical pair correlation between trigger photon and retrieved photon is retained, and the spatial structure of input and retrieved photons exhibits strong similarity. More importantly, we demonstrate that single-photon coherence is preserved during storage. The ability to store spatial structure at the single-photon level opens the possibility for high-dimensional quantum memories. PMID:24084711

Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

NASA Astrophysics Data System (ADS)

Nadtochiy, A. M.; Kryzhanovskaya, N. V.; Maximov, M. V.; Zhukov, A. E.; Moiseev, E. I.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu. M.; Mukhin, I. S.; Arakcheeva, E. M.; Livshits, D.; Lipovskii, A. A.

2013-09-01

Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 μW and λ/Δλ ˜ 27000.

Quantum limit of heat flow across a single electronic channel.

PubMed

Jezouin, S; Parmentier, F D; Anthore, A; Gennser, U; Cavanna, A; Jin, Y; Pierre, F

2013-11-01

Quantum physics predicts that there is a fundamental maximum heat conductance across a single transport channel and that this thermal conductance quantum, G(Q), is universal, independent of the type of particles carrying the heat. Such universality, combined with the relationship between heat and information, signals a general limit on information transfer. We report on the quantitative measurement of the quantum-limited heat flow for Fermi particles across a single electronic channel, using noise thermometry. The demonstrated agreement with the predicted G(Q) establishes experimentally this basic building block of quantum thermal transport. The achieved accuracy of below 10% opens access to many experiments involving the quantum manipulation of heat.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

NASA Astrophysics Data System (ADS)

Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

2018-05-01

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0 ) ˜0.10 -0.15 ] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

NASA Astrophysics Data System (ADS)

Narabadeesuphakorn, Phisut; Thainoi, Supachok; Tandaechanurat, Aniwat; Kiravittaya, Suwit; Nuntawong, Noppadon; Sopitopan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak

2018-04-01

Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and twin nano-stripes, respectively. In this work, we investigate the growth conditions to maximize the number ratio between twin and single nano-stripes. The highest percentage of the twin nano-stripes of up to 59% was achieved by optimizing the substrate temperature and the nano-stripe growth rate. Transmission electron microscopy reveals the substantial size and height reduction of the buried nano-stripes. We also observed the Raman shift and photon emission from our twin nano-stripes. These twin nano-stripes are promising for spintronics and quantum computing devices.

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses andmore » compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.« less

Towards a feasible implementation of quantum neural networks using quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altaisky, Mikhail V., E-mail: altaisky@mx.iki.rssi.ru, E-mail: nzolnik@iki.rssi.ru; Zolnikova, Nadezhda N., E-mail: altaisky@mx.iki.rssi.ru, E-mail: nzolnik@iki.rssi.ru; Kaputkina, Natalia E., E-mail: nataly@misis.ru

2016-03-07

We propose an implementation of quantum neural networks using an array of quantum dots with dipole-dipole interactions. We demonstrate that this implementation is both feasible and versatile by studying it within the framework of GaAs based quantum dot qubits coupled to a reservoir of acoustic phonons. Using numerically exact Feynman integral calculations, we have found that the quantum coherence in our neural networks survive for over a hundred ps even at liquid nitrogen temperatures (77 K), which is three orders of magnitude higher than current implementations, which are based on SQUID-based systems operating at temperatures in the mK range.

GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dadgostar, S.; Mogilatenko, A.; Masselink, W. T.

2016-03-07

We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6% lattice mismatch between GaAs and GaP in the Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6 × 10{sup 10} per cm{sup −2} and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared with the samples with smaller QDs.more » The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.« less

Quantum private query based on single-photon interference

NASA Astrophysics Data System (ADS)

Xu, Sheng-Wei; Sun, Ying; Lin, Song

2016-08-01

Quantum private query (QPQ) has become a research hotspot recently. Specially, the quantum key distribution (QKD)-based QPQ attracts lots of attention because of its practicality. Various such kind of QPQ protocols have been proposed based on different technologies of quantum communications. Single-photon interference is one of such technologies, on which the famous QKD protocol GV95 is just based. In this paper, we propose two QPQ protocols based on single-photon interference. The first one is simpler and easier to realize, and the second one is loss tolerant and flexible, and more practical than the first one. Furthermore, we analyze both the user privacy and the database privacy in the proposed protocols.

Research on Electrically Driven Single Photon Emitter by Diamond for Quantum Cryptography

DTIC Science & Technology

2015-03-24

by diamond for quantum cryptography 5a. CONTRACT NUMBER FA2386-14-1-4037 5b. GRANT NUMBE R Grant 14IOA093_144037 5c. PROGRAM ELEMENT...emerged as a highly competitive platform for applications in quantum cryptography , quantum computing, spintronics, and sensing or metrology...15. SUBJECT TERMS Diamond LED, Nitrogen Vacancy Complex, Quantum Computing, Quantum Cryptography , Single Spin Single Photon 16. SECURITY

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

Multijunction (MJ) photovoltaics are the most efficient solar cells today. Under sufficient solar concentration, these devices can achieve over 44% efficiency, roughly twenty percentage points higher than single crystal silicon based solar cells. Current records for triple junction (3J) multijunction cells are being challenged and broken regularly. However, it is unclear at this time which method of device growth will ultimately produce an efficiency that approaches the Shockley-Queisser limit. Lattice-matched (LM) MJ cells offer benefits over metamorphic and/or inverted metamorphic cells in that the device can be grown continuously, require no extra fabrication steps, and will ultimate produce the highest material quality throughout all junctions. The efficiency of current 3JMJ cells composed of GaInP(1.8eV)/(In)GaAs(1.4eV)/Ge(0.7eV) is limited by the bandgap combination used in the structure. The low energy bandgap bottom Ge cell produces roughly twice as much current as the middle GaAs cell and results in a current mismatch that limits the total current and thus total efficiency. By replacing the middle GaAs subcell with a 1-1.2eV subcell, the current mismatch could be alleviated and the efficiency enhanced. Unfortunately, there are no semiconductors lattice-matched to GaAs/Ge with this bandgap. InGaAs, which has a larger lattice constant than GaAs/Ge, can be grown with the appropriate bandgap, but due to compressive stresses introduced during growth the thickness that can be grown is limited to tens of nanometers, thus limiting absorption and current production. However, by growing layers of tensile strained GaAsP with appropriate thickness and composition, the stresses introduced by the InGaAs can be balanced. By repeating this process and inserting these layers into the intrinsic region of the GaAs middle subcell, a low bandgap material with an effective lattice constant equal to that of GaAs is introduced while maintaining lattice-matching conditions. The In

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of

Disruption of Higher Order DNA Structures in Friedreich’s Ataxia (GAA)n Repeats by PNA or LNA Targeting

PubMed Central

Bergquist, Helen; Rocha, Cristina S. J.; Álvarez-Asencio, Rubén; Nguyen, Chi-Hung; Rutland, Mark. W.; Smith, C. I. Edvard; Good, Liam; Nielsen, Peter E.; Zain, Rula

2016-01-01

Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigenetic modifications. With the aim of interfering with higher order H-DNA (like) DNA structures within pathological (GAA)n expansions, we examined sequence-specific interaction of peptide nucleic acid (PNA) with (GAA)n repeats of different lengths (short: n=9, medium: n=75 or long: n=115) by chemical probing of triple helical and single stranded regions. We found that a triplex structure (H-DNA) forms at GAA repeats of different lengths; however, single stranded regions were not detected within the medium size pathological repeat, suggesting the presence of a more complex structure. Furthermore, (GAA)4-PNA binding of the repeat abolished all detectable triplex DNA structures, whereas (CTT)5-PNA did not. We present evidence that (GAA)4-PNA can invade the DNA at the repeat region by binding the DNA CTT strand, thereby preventing non-canonical-DNA formation, and that triplex invasion complexes by (CTT)5-PNA form at the GAA repeats. Locked nucleic acid (LNA) oligonucleotides also inhibited triplex formation at GAA repeat expansions, and atomic force microscopy analysis showed significant relaxation of plasmid morphology in the presence of GAA-LNA. Thus, by inhibiting disease related higher order DNA structures in the Frataxin gene, such PNA and LNA oligomers may have potential for discovery of drugs aiming at recovering Frataxin expression. PMID:27846236

Single Channel Quantum Color Image Encryption Algorithm Based on HSI Model and Quantum Fourier Transform

NASA Astrophysics Data System (ADS)

Gong, Li-Hua; He, Xiang-Tao; Tan, Ru-Chao; Zhou, Zhi-Hong

2018-01-01

In order to obtain high-quality color images, it is important to keep the hue component unchanged while emphasize the intensity or saturation component. As a public color model, Hue-Saturation Intensity (HSI) model is commonly used in image processing. A new single channel quantum color image encryption algorithm based on HSI model and quantum Fourier transform (QFT) is investigated, where the color components of the original color image are converted to HSI and the logistic map is employed to diffuse the relationship of pixels in color components. Subsequently, quantum Fourier transform is exploited to fulfill the encryption. The cipher-text is a combination of a gray image and a phase matrix. Simulations and theoretical analyses demonstrate that the proposed single channel quantum color image encryption scheme based on the HSI model and quantum Fourier transform is secure and effective.

Measuring complete quantum states with a single observable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng Xinhua; Suter, Dieter; Du Jiangfeng

2007-10-15

Experimental determination of an unknown quantum state usually requires several incompatible measurements. However, it is also possible to determine the full quantum state from a single, repeated measurement. For this purpose, the quantum system whose state is to be determined is first coupled to a second quantum system (the 'assistant') in such a way that part of the information in the quantum state is transferred to the assistant. The actual measurement is then performed on the enlarged system including the original system and the assistant. We discuss in detail the requirements of this procedure and experimentally implement it on amore » simple quantum system consisting of nuclear spins.« less

Single-temperature quantum engine without feedback control.

PubMed

Yi, Juyeon; Talkner, Peter; Kim, Yong Woon

2017-08-01

A cyclically working quantum-mechanical engine that operates at a single temperature is proposed. Its energy input is delivered by a quantum measurement. The functioning of the engine does not require any feedback control. We analyze work, heat, and the efficiency of the engine for the case of a working substance that is governed by the laws of quantum mechanics and that can be adiabatically compressed and expanded. The obtained general expressions are exemplified for a spin in an adiabatically changing magnetic field and a particle moving in a potential with slowly changing shape.

Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

DTIC Science & Technology

1992-12-01

AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

GaAs Computer Technology

DTIC Science & Technology

1992-01-07

AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

Tri-channel single-mode terahertz quantum cascade laser.

PubMed

Wang, Tao; Liu, Jun-Qi; Liu, Feng-Qi; Wang, Li-Jun; Zhang, Jin-Chuan; Wang, Zhan-Guo

2014-12-01

We report on a compact THz quantum cascade laser source emitting at, individually controllable, three different wavelengths (92.6, 93.9, and 95.1 μm). This multiwavelength laser array can be used as a prototype of the emission source of THz wavelength division multiplex (WDM) wireless communication system. The source consists of three tapered single-mode distributed feedback (DFB) terahertz quantum cascade lasers fabricated monolithically on a single chip. All array elements feature longitudinal as well as lateral single-mode in the entire injection range. The peak output powers of individual lasers are 42, 73, and 37 mW at 10 K, respectively.

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2017-03-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

PubMed Central

Hu, C. Y.

2017-01-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks. PMID:28349960

Novel single photon sources for new generation of quantum communications

DTIC Science & Technology

2017-06-13

be used as building blocks for quantum cryptography and quantum key distribution There were numerous important achievements for the projects in the...single photon sources that will be used as build- ing blocks for quantum cryptography and quantum key distribution There were numerous im- portant...and enable absolutely secured information transfer between distant nodes – key prerequisite for quantum cryptography . Experiment: the experimental

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1985-01-01

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire.

PubMed

Li, Qiang; Wei, Hong; Xu, Hongxing

2015-12-09

The interactions between surface plasmons (SPs) in metal nanostructures and excitons in quantum emitters (QEs) lead to many interesting phenomena and potential applications that are strongly dependent on the quantum yield of SPs. The difficulty in distinguishing all the possible exciton recombination channels hinders the experimental determination of SP quantum yield. Here, we experimentally measured for the first time the quantum yield of single SPs generated by the exciton-plasmon coupling in a system composed of a single quantum dot and a silver nanowire (NW). By utilizing the SP guiding property of the NW, the decay rates of all the exciton recombination channels, i.e., direct free space radiation channel, SP generation channel, and nonradiative damping channel, are quantitatively obtained. It is determined that the optimum emitter-NW coupling distance for the largest SP quantum yield is about 10 nm, resulting from the different distance-dependent decay rates of the three channels. These results are important for manipulating the coupling between plasmonic nanostructures and QEs and developing on-chip quantum plasmonic devices for potential nanophotonic and quantum information applications.

Epitaxial growth of quantum rods with high aspect ratio and compositional contrast

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, L. H.; Patriarche, G.; Fiore, A.

2008-12-01

The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Quantum propagation in single mode fiber

NASA Technical Reports Server (NTRS)

Joneckis, Lance G.; Shapiro, Jeffrey H.

1994-01-01

This paper presents a theory for quantum light propagation in a single-mode fiber which includes the effects of the Kerr nonlinearity, group-velocity dispersion, and linear loss. The theory reproduces the results of classical self-phase modulation, quantum four-wave mixing, and classical solution physics, within their respective regions of validity. It demonstrates the crucial role played by the Kerr-effect material time constant, in limiting the quantum phase shifts caused by the broadband zero-point fluctuations that accompany any quantized input field. Operator moment equations - approximated, numerically, via a terminated cumulant expansion - are used to obtain results for homodyne-measurement noise spectra when dispersion is negligible. More complicated forms of these equations can be used to incorporate dispersion into the noise calculations.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Electrical control of single hole spins in nanowire quantum dots.

PubMed

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells.

PubMed

Endicott, J; Patanè, A; Ibáñez, J; Eaves, L; Bissiri, M; Hopkinson, M; Airey, R; Hill, G

2003-09-19

We use magnetotunneling spectroscopy to explore the admixing of the extended GaAs conduction band states with the localized N-impurity states in dilute GaAs(1-y)N(y) quantum wells. In our resonant tunneling diodes, electrons can tunnel into the N-induced E- and E+ subbands in a GaAs(1-y)N(y) quantum well layer, leading to resonant peaks in the current-voltage characteristics. By varying the magnetic field applied perpendicular to the current direction, we can tune an electron to tunnel into a given k state of the well; since the applied voltage tunes the energy, we can map out the form of the energy-momentum dispersion curves of E- and E+. The data reveal that for a small N content (approximately 0.1%) the E- and E+ subbands are highly nonparabolic and that the heavy effective mass E+ states have a significant Gamma-conduction band character even at k=0.

Towards quantum networks of single spins: analysis of a quantum memory with an optical interface in diamond.

PubMed

Blok, M S; Kalb, N; Reiserer, A; Taminiau, T H; Hanson, R

2015-01-01

Single defect centers in diamond have emerged as a powerful platform for quantum optics experiments and quantum information processing tasks. Connecting spatially separated nodes via optical photons into a quantum network will enable distributed quantum computing and long-range quantum communication. Initial experiments on trapped atoms and ions as well as defects in diamond have demonstrated entanglement between two nodes over several meters. To realize multi-node networks, additional quantum bit systems that store quantum states while new entanglement links are established are highly desirable. Such memories allow for entanglement distillation, purification and quantum repeater protocols that extend the size, speed and distance of the network. However, to be effective, the memory must be robust against the entanglement generation protocol, which typically must be repeated many times. Here we evaluate the prospects of using carbon nuclear spins in diamond as quantum memories that are compatible with quantum networks based on single nitrogen vacancy (NV) defects in diamond. We present a theoretical framework to describe the dephasing of the nuclear spins under repeated generation of NV spin-photon entanglement and show that quantum states can be stored during hundreds of repetitions using typical experimental coupling parameters. This result demonstrates that nuclear spins with weak hyperfine couplings are promising quantum memories for quantum networks.

Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio

2007-02-09

In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

PubMed Central

Sapienza, Luca; Davanço, Marcelo; Badolato, Antonio; Srinivasan, Kartik

2015-01-01

Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of QDs, presenting a challenge in creating devices that exploit the strong interaction of single QDs with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single QDs with respect to alignment features with an average position uncertainty <30 nm (<10 nm when using a solid-immersion lens), which represents an enabling technology for the creation of optimized single QD devices. To that end, we create QD single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48%±5% into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50%), low multiphoton probability (g(2)(0) <1%), and a significant Purcell enhancement factor (≈3). PMID:26211442

Quantum-classical interface based on single flux quantum digital logic

NASA Astrophysics Data System (ADS)

McDermott, R.; Vavilov, M. G.; Plourde, B. L. T.; Wilhelm, F. K.; Liebermann, P. J.; Mukhanov, O. A.; Ohki, T. A.

2018-04-01

We describe an approach to the integrated control and measurement of a large-scale superconducting multiqubit array comprising up to 108 physical qubits using a proximal coprocessor based on the Single Flux Quantum (SFQ) digital logic family. Coherent control is realized by irradiating the qubits directly with classical bitstreams derived from optimal control theory. Qubit measurement is performed by a Josephson photon counter, which provides access to the classical result of projective quantum measurement at the millikelvin stage. We analyze the power budget and physical footprint of the SFQ coprocessor and discuss challenges and opportunities associated with this approach.

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.

2017-09-01

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

Quantum routing of single optical photons with a superconducting flux qubit

NASA Astrophysics Data System (ADS)

Xia, Keyu; Jelezko, Fedor; Twamley, Jason

2018-05-01

Interconnecting optical photons with superconducting circuits is a challenging problem but essential for building long-range superconducting quantum networks. We propose a hybrid quantum interface between the microwave and optical domains where the propagation of a single-photon pulse along a nanowaveguide is controlled in a coherent way by tuning the electromagnetically induced transparency window with the quantum state of a flux qubit mediated by the spin in a nanodiamond. The qubit can route a single-photon pulse using the nanodiamond into a quantum superposition of paths without the aid of an optical cavity—simplifying the setup. By preparing the flux qubit in a superposition state our cavityless scheme creates a hybrid state-path entanglement between a flying single optical photon and a static superconducting qubit.

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

PubMed

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

PubMed

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

PubMed

Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

2004-11-15

The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

Single Quantum Dot with Microlens and 3D-Printed Micro-objective as Integrated Bright Single-Photon Source

PubMed Central

2017-01-01

Integrated single-photon sources with high photon-extraction efficiency are key building blocks for applications in the field of quantum communications. We report on a bright single-photon source realized by on-chip integration of a deterministic quantum dot microlens with a 3D-printed multilens micro-objective. The device concept benefits from a sophisticated combination of in situ 3D electron-beam lithography to realize the quantum dot microlens and 3D femtosecond direct laser writing for creation of the micro-objective. In this way, we obtain a high-quality quantum device with broadband photon-extraction efficiency of (40 ± 4)% and high suppression of multiphoton emission events with g(2)(τ = 0) < 0.02. Our results highlight the opportunities that arise from tailoring the optical properties of quantum emitters using integrated optics with high potential for the further development of plug-and-play fiber-coupled single-photon sources. PMID:28670600

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

2012-06-01

Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes,more » which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.« less

Quantum Clock Synchronization with a Single Qudit

NASA Astrophysics Data System (ADS)

Tavakoli, Armin; Cabello, Adán; Żukowski, Marek; Bourennane, Mohamed

2015-01-01

Clock synchronization for nonfaulty processes in multiprocess networks is indispensable for a variety of technologies. A reliable system must be able to resynchronize the nonfaulty processes upon some components failing causing the distribution of incorrect or conflicting information in the network. The task of synchronizing such networks is related to Byzantine agreement (BA), which can classically be solved using recursive algorithms if and only if less than one-third of the processes are faulty. Here we introduce a nonrecursive quantum algorithm, based on a quantum solution of the detectable BA, which achieves clock synchronization in the presence of arbitrary many faulty processes by using only a single quantum system.

Three-Dimensional Control of Self-Assembled Quantum Dot Configurations

DTIC Science & Technology

2010-06-17

Lateral Quantum Dot Molecules Around Self-Assembled Nanoholes . Appl. Phys. Lett. 2003, 82, 2892–2894. 7. Alonso-Gonzalez, P.; Martin-Sanchez, J.; Gonzalez...Y.; Alen, B.; Fuster, D.; Gonzalez, L. Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes . Cryst. Growth Des. 2009, 9

Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

PubMed

Tong, Cunzhu; Yoon, Soon Fatt; Wang, Lijun

2012-09-24

We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.

Homojunction GaAs solar cells grown by close space vapor transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.

2014-06-08

We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping,more » and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.« less

Single-photon non-linear optics with a quantum dot in a waveguide

NASA Astrophysics Data System (ADS)

Javadi, A.; Söllner, I.; Arcari, M.; Hansen, S. Lindskov; Midolo, L.; Mahmoodian, S.; Kiršanskė, G.; Pregnolato, T.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P.

2015-10-01

Strong non-linear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, non-linear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created. Here we show that a single quantum dot in a photonic-crystal waveguide can be used as a giant non-linearity sensitive at the single-photon level. The non-linear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum non-linearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.

Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

NASA Astrophysics Data System (ADS)

Schulli, T. U.; Sztucki, M.; Chamard, V.; Metzger, T. H.; Schuh, D.

2002-07-01

Free-standing InAs quantum dots on a GaAs (001) substrate have been investigated using grazing incidence x-ray diffraction. To suppress the strong scattering contribution from the GaAs substrate, we performed anomalous diffraction experiments at the superstructure (200) reflection, showing that the relative intensities from the dots and the substrate undergo a significant change with the x-ray energy below and above the As K edge. Since the signal from the substrate material can essentially be suppressed, this method is ideally suited for the investigation of strain, shape, and interdiffusion of buried quantum dots and quantum dots embedded in heteroepitaxial multilayers. In addition, we show that it can be used as a tool for studying wetting layers.

Single photon at a configurable quantum-memory-based beam splitter

NASA Astrophysics Data System (ADS)

Guo, Xianxin; Mei, Yefeng; Du, Shengwang

2018-06-01

We report the demonstration of a configurable coherent quantum-memory-based beam splitter (BS) for a single-photon wave packet making use of laser-cooled 85Rb atoms and electromagnetically induced transparency. The single-photon wave packet is converted (stored) into a collective atomic spin state and later retrieved (split) into two nearly opposing directions. The storage time, beam-splitting ratio, and relative phase are configurable and can be dynamically controlled. We experimentally confirm that such a BS preserves the quantum particle nature of the single photon and the coherence between the two split wave packets of the single photon.

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

NASA Technical Reports Server (NTRS)

Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

2007-01-01

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Near-infrared cathodoluminescence imaging of defect distributions in In(0.2)Ga(0.8)As/GaAs multiple quantum wells grown on prepatterned GaAs

NASA Technical Reports Server (NTRS)

Rich, D. H.; Fajkumar, K. C.; Chen, LI; Madhukar, A.; Grunthaner, F. J.

1992-01-01

The defect distribution in a highly strained In(0.2)Ga(0.8)As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near IR. By spatially correlating the luminescence arising from the MQW exciton recombination (950 nm) with the longer wavelength (1000-1200 nm) luminescence arising from the defect-induced recombination, it is demonstrated that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Modified energetics and growth kinetics on H-terminated GaAs (110)

NASA Astrophysics Data System (ADS)

Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

2013-10-01

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Observation of entanglement between a quantum dot spin and a single photon.

PubMed

Gao, W B; Fallahi, P; Togan, E; Miguel-Sanchez, J; Imamoglu, A

2012-11-15

Entanglement has a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, a main challenge is the efficient generation of entanglement between stationary (spin) and propagating (photon) quantum bits. Here we report the observation of quantum entanglement between a semiconductor quantum dot spin and the colour of a propagating optical photon. The demonstration of entanglement relies on the use of fast, single-photon detection, which allows us to project the photon into a superposition of red and blue frequency components. Our results extend the previous demonstrations of single-spin/single-photon entanglement in trapped ions, neutral atoms and nitrogen-vacancy centres to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. As a result of its fast optical transitions and favourable selection rules, the scheme we implement could in principle generate nearly deterministic entangled spin-photon pairs at a rate determined ultimately by the high spontaneous emission rate. Our observation constitutes a first step towards implementation of a quantum network with nodes consisting of semiconductor spin quantum bits.

Simple and Efficient Single Photon Filter for a Rb-based Quantum Memory

NASA Astrophysics Data System (ADS)

Stack, Daniel; Li, Xiao; Quraishi, Qudsia

2015-05-01

Distribution of entangled quantum states over significant distances is important to the development of future quantum technologies such as long-distance cryptography, networks of atomic clocks, distributed quantum computing, etc. Long-lived quantum memories and single photons are building blocks for systems capable of realizing such applications. The ability to store and retrieve quantum information while filtering unwanted light signals is critical to the operation of quantum memories based on neutral-atom ensembles. We report on an efficient frequency filter which uses a glass cell filled with 85Rb vapor to attenuate noise photons by an order of magnitude with little loss to the single photons associated with the operation of our cold 87Rb quantum memory. An Ar buffer gas is required to differentiate between signal and noise photons or similar statement. Our simple, passive filter requires no optical pumping or external frequency references and provides an additional 18 dB attenuation of our pump laser for every 1 dB loss of the single photon signal. We observe improved non-classical correlations and our data shows that the addition of a frequency filter increases the non-classical correlations and readout efficiency of our quantum memory by ~ 35%.

Measurements of the electric field of zero-point optical phonons in GaAs quantum wells support the Urbach rule for zero-temperature lifetime broadening.

PubMed

Bhattacharya, Rupak; Mondal, Richarj; Khatua, Pradip; Rudra, Alok; Kapon, Eli; Malzer, Stefan; Döhler, Gottfried; Pal, Bipul; Bansal, Bhavtosh

2015-01-30

We study a specific type of lifetime broadening resulting in the well-known exponential "Urbach tail" density of states within the energy gap of an insulator. After establishing the frequency and temperature dependence of the Urbach edge in GaAs quantum wells, we show that the broadening due to the zero-point optical phonons is the fundamental limit to the Urbach slope in high-quality samples. In rough analogy with Welton's heuristic interpretation of the Lamb shift, the zero-temperature contribution to the Urbach slope can be thought of as arising from the electric field of the zero-point longitudinal-optical phonons. The value of this electric field is experimentally measured to be 3  kV cm-1, in excellent agreement with the theoretical estimate.

A high-temperature single-photon source from nanowire quantum dots.

PubMed

Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

2008-12-01

We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

PubMed

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-10-15

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

PubMed Central

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V., E-mail: paul@phys.vsu.ru; Fedyukin, A. V.; Arsentyev, I. N.

The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free chargemore » carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.« less

Quantum design rules for single molecule logic gates.

PubMed

Renaud, N; Hliwa, M; Joachim, C

2011-08-28

Recent publications have demonstrated how to implement a NOR logic gate with a single molecule using its interaction with two surface atoms as logical inputs [W. Soe et al., ACS Nano, 2011, 5, 1436]. We demonstrate here how this NOR logic gate belongs to the general family of quantum logic gates where the Boolean truth table results from a full control of the quantum trajectory of the electron transfer process through the molecule by very local and classical inputs practiced on the molecule. A new molecule OR gate is proposed for the logical inputs to be also single metal atoms, one per logical input.

Quantum optical circulator controlled by a single chirally coupled atom

NASA Astrophysics Data System (ADS)

Scheucher, Michael; Hilico, Adèle; Will, Elisa; Volz, Jürgen; Rauschenbeutel, Arno

2016-12-01

Integrated nonreciprocal optical components, which have an inherent asymmetry between their forward and backward propagation direction, are key for routing signals in photonic circuits. Here, we demonstrate a fiber-integrated quantum optical circulator operated by a single atom. Its nonreciprocal behavior arises from the chiral interaction between the atom and the transversally confined light. We demonstrate that the internal quantum state of the atom controls the operation direction of the circulator and that it features a strongly nonlinear response at the single-photon level. This enables, for example, photon number-dependent routing and novel quantum simulation protocols. Furthermore, such a circulator can in principle be prepared in a coherent superposition of its operational states and may become a key element for quantum information processing in scalable integrated optical circuits.

Quantum teleportation via noisy bipartite and tripartite accelerating quantum states: beyond the single mode approximation

NASA Astrophysics Data System (ADS)

Zounia, M.; Shamirzaie, M.; Ashouri, A.

2017-09-01

In this paper quantum teleportation of an unknown quantum state via noisy maximally bipartite (Bell) and maximally tripartite (Greenberger-Horne-Zeilinger (GHZ)) entangled states are investigated. We suppose that one of the observers who would receive the sent state accelerates uniformly with respect to the sender. The interactions of the quantum system with its environment during the teleportation process impose noises. These (unital and nonunital) noises are: phase damping, phase flip, amplitude damping and bit flip. In expressing the modes of the Dirac field used as qubits, in the accelerating frame, the so-called single mode approximation is not imposed. We calculate the fidelities of teleportation, and discuss their behaviors using suitable plots. The effects of noise, acceleration and going beyond the single mode approximation are discussed. Although the Bell states bring higher fidelities than GHZ states, the global behaviors of the two quantum systems with respect to some noise types, and therefore their fidelities, are different.

Optical levitation of a microdroplet containing a single quantum dot.

PubMed

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2015-03-15

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This Letter presents the realization of an optically levitated solid-state quantum emitter.

Investigating and improving student understanding of quantum mechanics in the context of single photon interference

NASA Astrophysics Data System (ADS)

Marshman, Emily; Singh, Chandralekha

2017-06-01

Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the abstract quantum theory and concrete laboratory settings and have the potential to help students develop a solid grasp of the foundational issues in quantum mechanics. Here we describe students' conceptual difficulties with these topics in the context of Mach-Zehnder interferometer experiments with single photons and how the difficulties found in written surveys and individual interviews were used as a guide in the development of a Quantum Interactive Learning Tutorial (QuILT). The QuILT uses an inquiry-based approach to learning and takes into account the conceptual difficulties found via research to help upper-level undergraduate and graduate students learn about foundational quantum mechanics concepts using the concrete quantum optics context. It strives to help students learn the basics of quantum mechanics in the context of single photon experiment, develop the ability to apply fundamental quantum principles to experimental situations in quantum optics, and explore the differences between classical and quantum ideas in a concrete context. We discuss the findings from in-class evaluations suggesting that the QuILT was effective in helping students learn these abstract concepts.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Hybrid Circuit Quantum Electrodynamics: Coupling a Single Silicon Spin Qubit to a Photon

DTIC Science & Technology

2015-01-01

HYBRID CIRCUIT QUANTUM ELECTRODYNAMICS: COUPLING A SINGLE SILICON SPIN QUBIT TO A PHOTON PRINCETON UNIVERSITY JANUARY 2015 FINAL...SILICON SPIN QUBIT TO A PHOTON 5a. CONTRACT NUMBER FA8750-12-2-0296 5b. GRANT NUMBER N/A 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jason R. Petta...architectures. 15. SUBJECT TERMS Quantum Computing, Quantum Hybrid Circuits, Quantum Electrodynamics, Coupling a Single Silicon Spin Qubit to a Photon

Scanning gate imaging of two coupled quantum dots in single-walled carbon nanotubes.

PubMed

Zhou, Xin; Hedberg, James; Miyahara, Yoichi; Grutter, Peter; Ishibashi, Koji

2014-12-12

Two coupled single wall carbon nanotube quantum dots in a multiple quantum dot system were characterized by using a low temperature scanning gate microscopy (SGM) technique, at a temperature of 170 mK. The locations of single wall carbon nanotube quantum dots were identified by taking the conductance images of a single wall carbon nanotube contacted by two metallic electrodes. The single electron transport through single wall carbon nanotube multiple quantum dots has been observed by varying either the position or voltage bias of a conductive atomic force microscopy tip. Clear hexagonal patterns were observed in the region of the conductance images where only two sets of overlapping conductance rings are visible. The values of coupling capacitance over the total capacitance of the two dots, C(m)/C(1(2)) have been extracted to be 0.21 ∼ 0.27 and 0.23 ∼ 0.28, respectively. In addition, the interdot coupling (conductance peak splitting) has also been confirmed in both conductance image measurement and current-voltage curves. The results show that a SGM technique enables spectroscopic investigation of coupled quantum dots even in the presence of unexpected multiple quantum dots.

LEC GaAs for integrated circuit applications

NASA Technical Reports Server (NTRS)

Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

1984-01-01

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Direct Observation of Quantum Coherence in Single-Molecule Magnets

NASA Astrophysics Data System (ADS)

Schlegel, C.; van Slageren, J.; Manoli, M.; Brechin, E. K.; Dressel, M.

2008-10-01

Direct evidence of quantum coherence in a single-molecule magnet in a frozen solution is reported with coherence times as long as T2=630±30ns. We can strongly increase the coherence time by modifying the matrix in which the single-molecule magnets are embedded. The electron spins are coupled to the proton nuclear spins of both the molecule itself and, interestingly, also to those of the solvent. The clear observation of Rabi oscillations indicates that we can manipulate the spin coherently, an essential prerequisite for performing quantum computations.

Single-Shot Quantum Nondemolition Detection of Individual Itinerant Microwave Photons

NASA Astrophysics Data System (ADS)

Besse, Jean-Claude; Gasparinetti, Simone; Collodo, Michele C.; Walter, Theo; Kurpiers, Philipp; Pechal, Marek; Eichler, Christopher; Wallraff, Andreas

2018-04-01

Single-photon detection is an essential component in many experiments in quantum optics, but it remains challenging in the microwave domain. We realize a quantum nondemolition detector for propagating microwave photons and characterize its performance using a single-photon source. To this aim, we implement a cavity-assisted conditional phase gate between the incoming photon and a superconducting artificial atom. By reading out the state of this atom in a single shot, we reach an external (internal) photon-detection fidelity of 50% (71%), limited by transmission efficiency between the source and the detector (75%) and the coherence properties of the qubit. By characterizing the coherence and average number of photons in the field reflected off the detector, we demonstrate its quantum nondemolition nature. We envisage applications in generating heralded remote entanglement between qubits and for realizing logic gates between propagating microwave photons.

Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links

NASA Astrophysics Data System (ADS)

Blauvelt, H.; Thurmond, G.; Parsons, J.; Lewis, D.; Yen, H.

1984-08-01

High-speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3-dB bandwidths of 20 GHz and quantum efficiencies as high as 70 percent. The response of the detectors to light modulated at 1-18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.

Authenticated multi-user quantum key distribution with single particles

NASA Astrophysics Data System (ADS)

Lin, Song; Wang, Hui; Guo, Gong-De; Ye, Guo-Hua; Du, Hong-Zhen; Liu, Xiao-Fen

2016-03-01

Quantum key distribution (QKD) has been growing rapidly in recent years and becomes one of the hottest issues in quantum information science. During the implementation of QKD on a network, identity authentication has been one main problem. In this paper, an efficient authenticated multi-user quantum key distribution (MQKD) protocol with single particles is proposed. In this protocol, any two users on a quantum network can perform mutual authentication and share a secure session key with the assistance of a semi-honest center. Meanwhile, the particles, which are used as quantum information carriers, are not required to be stored, therefore the proposed protocol is feasible with current technology. Finally, security analysis shows that this protocol is secure in theory.

III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

NASA Astrophysics Data System (ADS)

Chiu, YenTing

This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

Zero-phonon-line emission of single molecules for applications in quantum information processing

NASA Astrophysics Data System (ADS)

Kiraz, Alper; Ehrl, M.; Mustecaplioglu, O. E.; Hellerer, T.; Brauchle, C.; Zumbusch, A.

2005-07-01

A single photon source which generates transform limited single photons is highly desirable for applications in quantum optics. Transform limited emission guarantees the indistinguishability of the emitted single photons. This, in turn brings groundbreaking applications in linear optics quantum information processing within an experimental reach. Recently, self-assembled InAs quantum dots and trapped atoms have successfully been demonstrated as such sources for highly indistinguishable single photons. Here, we demonstrate that nearly transform limited zero-phonon-line (ZPL) emission from single molecules can be obtained by using vibronic excitation. Furthermore we report the results of coincidence detection experiments at the output of a Michelson-type interferometer. These experiments reveal Hong-Ou-Mandel correlations as a proof of the indistinguishability of the single photons emitted consecutively from a single molecule. Therefore, single molecules constitute an attractive alternative to single InAs quantum dots and trapped atoms for applications in linear optics quantum information processing. Experiments were performed with a home-built confocal microscope keeping the sample in a superfluid liquid Helium bath at 1.4K. We investigated terrylenediimide (TDI) molecules highly diluted in hexadecane (Shpol'skii matrix). A continuous wave single mode dye laser was used for excitation of vibronic transitions of individual molecules. From the integral fluorescence, the ZPL of single molecules was selected with a spectrally narrow interference filter. The ZPL emission was then sent to a scanning Fabry-Perot interferometer for linewidth measurements or a Michelson-type interferometer for coincidence detection.

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

PubMed

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Generation of Single Photons and Entangled Photon Pairs from a Quantum Dot

NASA Astrophysics Data System (ADS)

Yamamoto, Y.; Pelton, M.; Santori, C.; Solomon, G. S.

2002-10-01

Current quantum cryptography systems are limited by the Poissonian photon statistics of a standard light source: a security loophole is opened up by the possibility of multiple-photon pulses. By replacing the source with a single-photon emitter, transmission rates of secure information can be improved. A single photon source is also essential to implement a linear optics quantum computer. We have investigated the use of single self-assembled InAs/GaAs quantum dots as such single-photon sources, and have seen a hundred-fold reduction in the multi-photon probability as compared to Poissonian pulses. An extension of our experiment should also allow for the generation of triggered, polarizationentangled photon pairs.

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Ben-Zvi, I.; Kewisch, J.

2010-05-23

RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in themore » preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

PubMed

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Quantum Well Infrared Photodetectors (QWIP)

NASA Technical Reports Server (NTRS)

Levine, B. F.

1990-01-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Quantum Well Infrared Photodetectors (QWIP)

NASA Astrophysics Data System (ADS)

Levine, B. F.

1990-07-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Negative differential velocity in ultradilute GaAs1-xNx alloys

NASA Astrophysics Data System (ADS)

Vogiatzis, N.; Rorison, J. M.

2011-04-01

We present theoretical results on steady state characteristics in bulk GaAs1-xNx alloys (x ≤ 0.2) using the single electron Monte-Carlo method. Two approaches have been used; the first assumes a GaAs band with a strong nitrogen scattering resonance and the second uses the band anti-crossing model, in which the localized N level interacts with the GaAs band strongly perturbing the conduction band. In the first model we observe two negative differential velocity peaks, the lower one associated with nitrogen scattering while the higher one with polar optical phonon emission accounting for the nonparabolicity effect. In the second model one negative differential velocity peak is observed associated with polar optical phonon emission. Good agreement with experimental low field mobility is obtained from the first model. We also comment on the results from both Models when the intervalley Г → L transfer is accounted for.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

A molecular quantum spin network controlled by a single qubit.

PubMed

Schlipf, Lukas; Oeckinghaus, Thomas; Xu, Kebiao; Dasari, Durga Bhaktavatsala Rao; Zappe, Andrea; de Oliveira, Felipe Fávaro; Kern, Bastian; Azarkh, Mykhailo; Drescher, Malte; Ternes, Markus; Kern, Klaus; Wrachtrup, Jörg; Finkler, Amit

2017-08-01

Scalable quantum technologies require an unprecedented combination of precision and complexity for designing stable structures of well-controllable quantum systems on the nanoscale. It is a challenging task to find a suitable elementary building block, of which a quantum network can be comprised in a scalable way. We present the working principle of such a basic unit, engineered using molecular chemistry, whose collective control and readout are executed using a nitrogen vacancy (NV) center in diamond. The basic unit we investigate is a synthetic polyproline with electron spins localized on attached molecular side groups separated by a few nanometers. We demonstrate the collective readout and coherent manipulation of very few (≤ 6) of these S = 1/2 electronic spin systems and access their direct dipolar coupling tensor. Our results show that it is feasible to use spin-labeled peptides as a resource for a molecular qubit-based network, while at the same time providing simple optical readout of single quantum states through NV magnetometry. This work lays the foundation for building arbitrary quantum networks using well-established chemistry methods, which has many applications ranging from mapping distances in single molecules to quantum information processing.

Quantum correlations of helicity entangled states in non-inertial frames beyond single mode approximation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harsij, Zeynab, E-mail: z.harsij@ph.iut.ac.ir; Mirza, Behrouz, E-mail: b.mirza@cc.iut.ac.ir

A helicity entangled tripartite state is considered in which the degree of entanglement is preserved in non-inertial frames. It is shown that Quantum Entanglement remains observer independent. As another measure of quantum correlation, Quantum Discord has been investigated. It is explicitly shown that acceleration has no effect on the degree of quantum correlation for the bipartite and tripartite helicity entangled states. Geometric Quantum Discord as a Hilbert–Schmidt distance is computed for helicity entangled states. It is shown that living in non-inertial frames does not make any influence on this distance, either. In addition, the analysis has been extended beyond singlemore » mode approximation to show that acceleration does not have any impact on the quantum features in the limit beyond the single mode. As an interesting result, while the density matrix depends on the right and left Unruh modes, the Negativity as a measure of Quantum Entanglement remains constant. Also, Quantum Discord does not change beyond single mode approximation. - Highlights: • The helicity entangled states here are observer independent in non-inertial frames. • It is explicitly shown that Quantum Discord for these states is observer independent. • Geometric Quantum Discord is also not affected by acceleration increase. • Extending to beyond single mode does not change the degree of entanglement. • Beyond single mode approximation the degree of Quantum Discord is also preserved.« less

Static strain tuning of quantum dots embedded in a photonic wire

NASA Astrophysics Data System (ADS)

Tumanov, D.; Vaish, N.; Nguyen, H. A.; Curé, Y.; Gérard, J.-M.; Claudon, J.; Donatini, F.; Poizat, J.-Ph.

2018-03-01

We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 25 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2×6) surface

NASA Astrophysics Data System (ADS)

Shimoda, M.; Tsukamoto, S.; Koguchi, N.

1998-01-01

Core-level X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) have been applied to investigate the sulfur-terminated GaAs(001)-(2×6) surface. No forward scattering peaks were found in the XPD pattern of S 2s emission, indicating that adsorbed S atoms form a single layer on the GaAs substrate. In accordance with the zincblende structure of GaAs, the AED patterns of Ga L 3M 45M 45 and As L 3M 45M 45 emission almost coincide with each other, if one of the emissions is rotated by 90° around the [001] direction. This fact suggests that the diffraction patterns mainly reflect the structure of the bulk GaAs crystal. In order to investigate the surface structure, AED patterns in large polar angles were analyzed with single scattering cluster (SSC) calculations. The best result was obtained with a model cluster where the S-S bond length was set at 0.28 nm, 30% shorter than the corresponding length of the ideal (1×1) structure, and the adsorption height was set at 0.12-0.13 nm, 10% shorter than the ideal interlayer distance of GaAs(001) planes. These values are in good agreement with the results of STM measurements. A modulation of the inter-dimer distance was also found, suggesting the existence of missing dimers.

GaAs Monolithic Microwave Subsystem Technology Base

DTIC Science & Technology

1980-01-01

To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

Quantum delayed-choice experiment with a single neutral atom.

PubMed

Li, Gang; Zhang, Pengfei; Zhang, Tiancai

2017-10-01

We present a proposal to implement a quantum delayed-choice (QDC) experiment with a single neutral atom, such as a rubidium or cesium atom. In our proposal, a Ramsey interferometer is adopted to observe the wave-like or particle-like behaviors of a single atom depending on the existence or absence of the second π/2-rotation. A quantum-controlled π/2-rotation on target atom is realized through a Rydberg-Rydberg interaction by another ancilla atom. It shows that a heavy neutral atom can also have a morphing behavior between the particle and the wave. The realization of the QDC experiment with such heavy neutral atoms not only is significant to understand the Bohr's complementarity principle in matter-wave and matter-particle domains but also has great potential on the quantum information process with neutral atoms.

Quantum optics. All-optical routing of single photons by a one-atom switch controlled by a single photon.

PubMed

Shomroni, Itay; Rosenblum, Serge; Lovsky, Yulia; Bechler, Orel; Guendelman, Gabriel; Dayan, Barak

2014-08-22

The prospect of quantum networks, in which quantum information is carried by single photons in photonic circuits, has long been the driving force behind the effort to achieve all-optical routing of single photons. We realized a single-photon-activated switch capable of routing a photon from any of its two inputs to any of its two outputs. Our device is based on a single atom coupled to a fiber-coupled, chip-based microresonator. A single reflected control photon toggles the switch from high reflection (R ~ 65%) to high transmission (T ~ 90%), with an average of ~1.5 control photons per switching event (~3, including linear losses). No additional control fields are required. The control and target photons are both in-fiber and practically identical, making this scheme compatible with scalable architectures for quantum information processing. Copyright © 2014, American Association for the Advancement of Science.

Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double δ-doped GaAs quantum wells

NASA Astrophysics Data System (ADS)

Martínez-Orozco, J. C.; Rojas-Briseño, J. G.; Rodríguez-Magdaleno, K. A.; Rodríguez-Vargas, I.; Mora-Ramos, M. E.; Restrepo, R. L.; Ungan, F.; Kasapoglu, E.; Duque, C. A.

2017-11-01

In this paper we are reporting the computation for the Nonlinear Optical Rectification (NOR) and the Second and Third Harmonic Generation (SHG and THG) related with electronic states of asymmetric double Si-δ-doped quantum well in a GaAs matrix when this is subjected to an in-plane (x-oriented) constant magnetic field effect. The work is performed in the effective mass and parabolic band approximations in order to compute the electronic structure for the system by a diagonalization procedure. The expressions for the nonlinear optical susceptibilities, χ0(2), χ2ω(2), and χ3ω(3), are those arising from the compact matrix density formulation and stand for the NOR, SHG, and THG, respectively. This asymmetric double δ-doped quantum well potential profile actually exhibits nonzero NOR, SHG, and THG responses which can be easily controlled by the in-plane (x-direction) externally applied magnetic field. In particular we find that for the chosen configuration the harmonic generation is in the far-infrared/THz region, thus and becoming suitable building blocks for photodetectors in this range of the electromagnetic spectra.

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

DOE PAGES

Xia, Zhenyang; Song, Haomin; Kim, Munho; ...

2017-07-07

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less

Single mode terahertz quantum cascade amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Y., E-mail: yr235@cam.ac.uk; Wallis, R.; Shah, Y. D.

2014-10-06

A terahertz (THz) optical amplifier based on a 2.9 THz quantum cascade laser (QCL) structure has been demonstrated. By depositing an antireflective coating on the QCL facet, the laser mirror losses are enhanced to fully suppress the lasing action, creating a THz quantum cascade (QC) amplifier. Terahertz radiation amplification has been obtained, by coupling a separate multi-mode THz QCL of the same active region design to the QC amplifier. A bare cavity gain is achieved and shows excellent agreement with the lasing spectrum from the original QCL without the antireflective coating. Furthermore, a maximum optical gain of ∼30 dB with single-modemore » radiation output is demonstrated.« less

Quantum correlations of helicity entangled states in non-inertial frames beyond single mode approximation

NASA Astrophysics Data System (ADS)

Harsij, Zeynab; Mirza, Behrouz

2014-12-01

A helicity entangled tripartite state is considered in which the degree of entanglement is preserved in non-inertial frames. It is shown that Quantum Entanglement remains observer independent. As another measure of quantum correlation, Quantum Discord has been investigated. It is explicitly shown that acceleration has no effect on the degree of quantum correlation for the bipartite and tripartite helicity entangled states. Geometric Quantum Discord as a Hilbert-Schmidt distance is computed for helicity entangled states. It is shown that living in non-inertial frames does not make any influence on this distance, either. In addition, the analysis has been extended beyond single mode approximation to show that acceleration does not have any impact on the quantum features in the limit beyond the single mode. As an interesting result, while the density matrix depends on the right and left Unruh modes, the Negativity as a measure of Quantum Entanglement remains constant. Also, Quantum Discord does not change beyond single mode approximation.

Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

NASA Technical Reports Server (NTRS)

Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

2002-01-01

Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

Exchange-biased quantum tunnelling in a supramolecular dimer of single-molecule magnets.

PubMed

Wernsdorfer, Wolfgang; Aliaga-Alcalde, Núria; Hendrickson, David N; Christou, George

2002-03-28

Various present and future specialized applications of magnets require monodisperse, small magnetic particles, and the discovery of molecules that can function as nanoscale magnets was an important development in this regard. These molecules act as single-domain magnetic particles that, below their blocking temperature, exhibit magnetization hysteresis, a classical property of macroscopic magnets. Such 'single-molecule magnets' (SMMs) straddle the interface between classical and quantum mechanical behaviour because they also display quantum tunnelling of magnetization and quantum phase interference. Quantum tunnelling of magnetization can be advantageous for some potential applications of SMMs, for example, in providing the quantum superposition of states required for quantum computing. However, it is a disadvantage in other applications, such as information storage, where it would lead to information loss. Thus it is important to both understand and control the quantum properties of SMMs. Here we report a supramolecular SMM dimer in which antiferromagnetic coupling between the two components results in quantum behaviour different from that of the individual SMMs. Our experimental observations and theoretical analysis suggest a means of tuning the quantum tunnelling of magnetization in SMMs. This system may also prove useful for studying quantum tunnelling of relevance to mesoscopic antiferromagnets.

Spin relaxation in n-type GaAs quantum wells from a fully microscopic approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, J.; Wu, M. W.; Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026

2007-01-15

We perform a full microscopic investigation on the spin relaxation in n-type (001) GaAs quantum wells with an Al{sub 0.4}Ga{sub 0.6}As barrier due to the D'yakonov-Perel' mechanism from nearly 20 K to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] overmore » the whole temperature regime (from 20 to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature (<50 K) in samples with low electron density (e.g., density less than 1x10{sup 11} cm{sup -2}) but high mobility. This peak disappears in samples with high electron density (e.g., 2x10{sup 11} cm{sup -2}) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.« less

Polarized electrons, trions, and nuclei in charged quantum dots

NASA Astrophysics Data System (ADS)

Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

2003-07-01

We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

Long-Distance Single Photon Transmission from a Trapped Ion via Quantum Frequency Conversion

NASA Astrophysics Data System (ADS)

Walker, Thomas; Miyanishi, Koichiro; Ikuta, Rikizo; Takahashi, Hiroki; Vartabi Kashanian, Samir; Tsujimoto, Yoshiaki; Hayasaka, Kazuhiro; Yamamoto, Takashi; Imoto, Nobuyuki; Keller, Matthias

2018-05-01

Trapped atomic ions are ideal single photon emitters with long-lived internal states which can be entangled with emitted photons. Coupling the ion to an optical cavity enables the efficient emission of single photons into a single spatial mode and grants control over their temporal shape. These features are key for quantum information processing and quantum communication. However, the photons emitted by these systems are unsuitable for long-distance transmission due to their wavelengths. Here we report the transmission of single photons from a single 40Ca+ ion coupled to an optical cavity over a 10 km optical fiber via frequency conversion from 866 nm to the telecom C band at 1530 nm. We observe nonclassical photon statistics of the direct cavity emission, the converted photons, and the 10 km transmitted photons, as well as the preservation of the photons' temporal shape throughout. This telecommunication-ready system can be a key component for long-distance quantum communication as well as future cloud quantum computation.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Quantum Communication without Alignment using Multiple-Qubit Single-Photon States

NASA Astrophysics Data System (ADS)

Aolita, L.; Walborn, S. P.

2007-03-01

We propose a scheme for encoding logical qubits in a subspace protected against collective rotations around the propagation axis using the polarization and transverse spatial degrees of freedom of single photons. This encoding allows for quantum key distribution without the need of a shared reference frame. We present methods to generate entangled states of two logical qubits using present day down-conversion sources and linear optics, and show that the application of these entangled logical states to quantum information schemes allows for alignment-free tests of Bell’s inequalities, quantum dense coding, and quantum teleportation.

Origin of Quantum Ring Formation During Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Zhou, Z. Y.; Zheng, C. X.; Tang, W. X.; Tersoff, J.; Jesson, D. E.

2013-07-01

Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge, while outer rings result from the reaction of Ga and As atoms diffusing along the surface. The observed variety of morphologies primarily reflects relative changes in the outer rings with temperature and As flux.

Single-hidden-layer feed-forward quantum neural network based on Grover learning.

PubMed

Liu, Cheng-Yi; Chen, Chein; Chang, Ching-Ter; Shih, Lun-Min

2013-09-01

In this paper, a novel single-hidden-layer feed-forward quantum neural network model is proposed based on some concepts and principles in the quantum theory. By combining the quantum mechanism with the feed-forward neural network, we defined quantum hidden neurons and connected quantum weights, and used them as the fundamental information processing unit in a single-hidden-layer feed-forward neural network. The quantum neurons make a wide range of nonlinear functions serve as the activation functions in the hidden layer of the network, and the Grover searching algorithm outstands the optimal parameter setting iteratively and thus makes very efficient neural network learning possible. The quantum neuron and weights, along with a Grover searching algorithm based learning, result in a novel and efficient neural network characteristic of reduced network, high efficient training and prospect application in future. Some simulations are taken to investigate the performance of the proposed quantum network and the result show that it can achieve accurate learning. Copyright © 2013 Elsevier Ltd. All rights reserved.

Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

PubMed

Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

2009-10-09

Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

Single-molecule quantum dot as a Kondo simulator

NASA Astrophysics Data System (ADS)

Hiraoka, R.; Minamitani, E.; Arafune, R.; Tsukahara, N.; Watanabe, S.; Kawai, M.; Takagi, N.

2017-06-01

Structural flexibility of molecule-based systems is key to realizing the novel functionalities. Tuning the structure in the atomic scale enables us to manipulate the quantum state in the molecule-based system. Here we present the reversible Hamiltonian manipulation in a single-molecule quantum dot consisting of an iron phthalocyanine molecule attached to an Au electrode and a scanning tunnelling microscope tip. We precisely controlled the position of Fe2+ ion in the molecular cage by using the tip, and tuned the Kondo coupling between the molecular spins and the Au electrode. Then, we realized the crossover between the strong-coupling Kondo regime and the weak-coupling regime governed by spin-orbit interaction in the molecule. The results open an avenue to simulate low-energy quantum many-body physics and quantum phase transition through the molecular flexibility.

New Passivation Methods of GaAs.

DTIC Science & Technology

1980-01-01

Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

NASA Astrophysics Data System (ADS)

Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.

2017-11-01

We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.

Toward real-time quantum imaging with a single pixel camera

DOE PAGES

Lawrie, B. J.; Pooser, R. C.

2013-03-19

In this paper, we present a workbench for the study of real-time quantum imaging by measuring the frame-by-frame quantum noise reduction of multi-spatial-mode twin beams generated by four wave mixing in Rb vapor. Exploiting the multiple spatial modes of this squeezed light source, we utilize spatial light modulators to selectively pass macropixels of quantum correlated modes from each of the twin beams to a high quantum efficiency balanced detector. Finally, in low-light-level imaging applications, the ability to measure the quantum correlations between individual spatial modes and macropixels of spatial modes with a single pixel camera will facilitate compressive quantum imagingmore » with sensitivity below the photon shot noise limit.« less

Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

DOE PAGES

Liu, Wei; Zhang, Shukui; Stutzman, Marcy; ...

2016-10-24

Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ionmore » channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.« less

Quantum teleportation of multiple degrees of freedom of a single photon

NASA Astrophysics Data System (ADS)

Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2015-02-01

Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

Quantum teleportation of multiple degrees of freedom of a single photon.

PubMed

Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2015-02-26

Quantum teleportation provides a 'disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

Testing a GaAs cathode in SRF gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Kewisch, J.; Ben-Zvi, I.

high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.« less

Submonolayer Quantum Dot Infrared Photodetector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

NASA Astrophysics Data System (ADS)

Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

2017-11-01

Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

Observation of quantum entanglement between a photon and a single electron spin confined to an InAs quantum dot

NASA Astrophysics Data System (ADS)

Schaibley, John; Burgers, Alex; McCracken, Greg; Duan, Luming; Berman, Paul; Steel, Duncan; Bracker, Allan; Gammon, Daniel; Sham, Lu

2013-03-01

A single electron spin confined to a single InAs quantum dot (QD) can serve as a qubit for quantum information processing. By utilizing the QD's optically excited trion states in the presence of an externally applied magnetic field, the QD spin can be rapidly initialized, manipulated and read out. A key resource for quantum information is the ability to entangle distinct QD spins. One approach relies on intermediate spin-photon entanglement to mediate the entanglement between distant QD spin qubits. We report a demonstration of quantum entanglement between a photon's polarization state and the spin state of a single electron confined to a single QD. Here, the photon is spontaneously emitted from one of the QD's trion states. The emitted photon's polarization along the detection axis is entangled with the resulting spin state of the QD. By performing projective measurements on the photon's polarization state and correlating these measurements with the state of the QD spin in two different bases, we obtain a lower bound on the entanglement fidelity of 0.59 (after background correction). The fidelity bound is limited almost entirely by the timing resolution of our single photon detector. The spin-photon entanglement generation rate is 3 ×103 s-1. Supported by: NSF, MURI, AFOSR, DARPA, ARO.

Authenticated Quantum Key Distribution with Collective Detection using Single Photons

NASA Astrophysics Data System (ADS)

Huang, Wei; Xu, Bing-Jie; Duan, Ji-Tong; Liu, Bin; Su, Qi; He, Yuan-Hang; Jia, Heng-Yue

2016-10-01

We present two authenticated quantum key distribution (AQKD) protocols by utilizing the idea of collective (eavesdropping) detection. One is a two-party AQKD protocol, the other is a multiparty AQKD protocol with star network topology. In these protocols, the classical channels need not be assumed to be authenticated and the single photons are used as the quantum information carriers. To achieve mutual identity authentication and establish a random key in each of the proposed protocols, only one participant should be capable of preparing and measuring single photons, and the main quantum ability that the rest of the participants should have is just performing certain unitary operations. Security analysis shows that these protocols are free from various kinds of attacks, especially the impersonation attack and the man-in-the-middle (MITM) attack.

Electronic structure calculation of single and coupled self-assembled quantum dots

NASA Astrophysics Data System (ADS)

Mlinar, Vladan

There are two main contributions of this thesis. First, from the theoretical point of view, we find that different treatments of the nanostructure-barrier interface in the framework of multiband effective-mass theory, result in the existence of non-physical solutions for the hole energy levels of a nanostructure. Our proposed improvement is an approach based on the envelope-function theory for nanostructures developed by Burt and Foreman. In structures with a large difference of the structural parameters between the constituent materials, such as InAs/GaAs quantum nanostructures, the conventional multiband models lead to non-physical solutions. Second, we investigate underlying physics of the theoretically less investigated QD systems. Variation of electronic and optical properties of InAs/GaAs QDs and QDM grown on [11k] substrates, where k=1,2,3 were analyzed and we found that: (i) The QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case. (ii) The small variation of inter-dot distance in eight QD molecule qualitatively changes the transition energy dependence on the substrate orientation. (iii) Size of the QD in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. Next, two cases of type II QDs where hole is localized outside the dot, were discussed: InP/InGaP QDs and QDMs in an external magnetic field, and InAs QDs capped with Ga(As,Sb). Competition between confinement, quantum mechanical coupling, and strain influence the exciton diamagnetic shift in single QD and double and triple QDM is investigated in details. Available experimental data were successfully described by one of the optically active exciton states of the lowest lying exciton quartet. Finally, the electronic and optical properties of unstrained GaAs self-assembled QDs with precisely known

Accelerated GaAs growth through MOVPE for low-cost PV applications

NASA Astrophysics Data System (ADS)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

PubMed

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Quantum proofs can be verified using only single-qubit measurements

NASA Astrophysics Data System (ADS)

Morimae, Tomoyuki; Nagaj, Daniel; Schuch, Norbert

2016-02-01

Quantum Merlin Arthur (QMA) is the class of problems which, though potentially hard to solve, have a quantum solution that can be verified efficiently using a quantum computer. It thus forms a natural quantum version of the classical complexity class NP (and its probabilistic variant MA, Merlin-Arthur games), where the verifier has only classical computational resources. In this paper, we study what happens when we restrict the quantum resources of the verifier to the bare minimum: individual measurements on single qubits received as they come, one by one. We find that despite this grave restriction, it is still possible to soundly verify any problem in QMA for the verifier with the minimum quantum resources possible, without using any quantum memory or multiqubit operations. We provide two independent proofs of this fact, based on measurement-based quantum computation and the local Hamiltonian problem. The former construction also applies to QMA1, i.e., QMA with one-sided error.

Investigating and Improving Student Understanding of Quantum Mechanics in the Context of Single Photon Interference

ERIC Educational Resources Information Center

Marshman, Emily; Singh, Chandralekha

2017-01-01

Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the…

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Janousek, B. K.; Francis, R. W.; Wendt, J. P.

1985-01-01

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Phosphine Functionalization GaAs(111)A Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Traub, M.; Biteen, J; Michalak, D

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime.

PubMed

Press, David; Götzinger, Stephan; Reitzenstein, Stephan; Hofmann, Carolin; Löffler, Andreas; Kamp, Martin; Forchel, Alfred; Yamamoto, Yoshihisa

2007-03-16

We observe antibunching in the photons emitted from a strongly coupled single quantum dot and pillar microcavity in resonance. When the quantum dot was spectrally detuned from the cavity mode, the cavity emission remained antibunched, and also anticorrelated from the quantum dot emission. Resonant pumping of the selected quantum dot via an excited state enabled these observations by eliminating the background emitters that are usually coupled to the cavity. This device demonstrates an on-demand single-photon source operating in the strong coupling regime, with a Purcell factor of 61+/-7 and quantum efficiency of 97%.

Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures

NASA Astrophysics Data System (ADS)

Izhnin, I. I.; Izhnin, A. I.; Fitsych, O. I.; Voitsekhovskii, A. V.; Gorn, D. I.; Semakova, A. A.; Bazhenov, N. L.; Mynbaev, K. D.; Zegrya, G. G.

2018-04-01

Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures were grown with molecular beam epitaxy on GaAs substrates. InAsSb-based structures were grown with metal-organic chemical vapor deposition on InAs substrates. The common feature of luminescence spectra of all the structures was the presence of peaks with the energy much larger than that of calculated optical transitions between the first quantization levels for electrons and heavy holes. Possibility of observation of optical transitions between the quantization levels of electrons and first and/or second heavy and light hole levels is discussed in the paper in relation to the specifics of the electronic structure of the materials under consideration.

Identification of single-input-single-output quantum linear systems

NASA Astrophysics Data System (ADS)

Levitt, Matthew; GuÅ£ǎ, Mǎdǎlin

2017-03-01

The purpose of this paper is to investigate system identification for single-input-single-output general (active or passive) quantum linear systems. For a given input we address the following questions: (1) Which parameters can be identified by measuring the output? (2) How can we construct a system realization from sufficient input-output data? We show that for time-dependent inputs, the systems which cannot be distinguished are related by symplectic transformations acting on the space of system modes. This complements a previous result of Guţă and Yamamoto [IEEE Trans. Autom. Control 61, 921 (2016), 10.1109/TAC.2015.2448491] for passive linear systems. In the regime of stationary quantum noise input, the output is completely determined by the power spectrum. We define the notion of global minimality for a given power spectrum, and characterize globally minimal systems as those with a fully mixed stationary state. We show that in the case of systems with a cascade realization, the power spectrum completely fixes the transfer function, so the system can be identified up to a symplectic transformation. We give a method for constructing a globally minimal subsystem direct from the power spectrum. Restricting to passive systems the analysis simplifies so that identifiability may be completely understood from the eigenvalues of a particular system matrix.

Nitridation of porous GaAs by an ECR ammonia plasma

NASA Astrophysics Data System (ADS)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Classical and quantum optical correlation effects between single quantum dots: The role of the hopping photon

NASA Astrophysics Data System (ADS)

Hughes, S.; Gotoh, H.; Kamada, H.

2006-09-01

We present a theoretical study of photon-coupled single quantum dots in a semiconductor. A series of optical effects are demonstrated, including a subradiant dark resonance, superradiance, reversible spontaneous emission decay, and pronounced exciton entanglement. Both classical and quantum optical approaches are presented using a self-consistent formalism that treats real and virtual photon exchange on an equal footing and can account for different quantum dot properties, surface effects, and retardation in the dipole-dipole coupling, all of which are shown to play a non-negligible role.

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

NASA Astrophysics Data System (ADS)

Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

2017-12-01

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-08-01

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect tomore » the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.« less

Real-time single-molecule imaging of quantum interference.

PubMed

Juffmann, Thomas; Milic, Adriana; Müllneritsch, Michael; Asenbaum, Peter; Tsukernik, Alexander; Tüxen, Jens; Mayor, Marcel; Cheshnovsky, Ori; Arndt, Markus

2012-03-25

The observation of interference patterns in double-slit experiments with massive particles is generally regarded as the ultimate demonstration of the quantum nature of these objects. Such matter-wave interference has been observed for electrons, neutrons, atoms and molecules and, in contrast to classical physics, quantum interference can be observed when single particles arrive at the detector one by one. The build-up of such patterns in experiments with electrons has been described as the "most beautiful experiment in physics". Here, we show how a combination of nanofabrication and nano-imaging allows us to record the full two-dimensional build-up of quantum interference patterns in real time for phthalocyanine molecules and for derivatives of phthalocyanine molecules, which have masses of 514 AMU and 1,298 AMU respectively. A laser-controlled micro-evaporation source was used to produce a beam of molecules with the required intensity and coherence, and the gratings were machined in 10-nm-thick silicon nitride membranes to reduce the effect of van der Waals forces. Wide-field fluorescence microscopy detected the position of each molecule with an accuracy of 10 nm and revealed the build-up of a deterministic ensemble interference pattern from single molecules that arrived stochastically at the detector. In addition to providing this particularly clear demonstration of wave-particle duality, our approach could also be used to study larger molecules and explore the boundary between quantum and classical physics.

Real-time single-molecule imaging of quantum interference

NASA Astrophysics Data System (ADS)

Juffmann, Thomas; Milic, Adriana; Müllneritsch, Michael; Asenbaum, Peter; Tsukernik, Alexander; Tüxen, Jens; Mayor, Marcel; Cheshnovsky, Ori; Arndt, Markus

2012-05-01

The observation of interference patterns in double-slit experiments with massive particles is generally regarded as the ultimate demonstration of the quantum nature of these objects. Such matter-wave interference has been observed for electrons, neutrons, atoms and molecules and, in contrast to classical physics, quantum interference can be observed when single particles arrive at the detector one by one. The build-up of such patterns in experiments with electrons has been described as the ``most beautiful experiment in physics''. Here, we show how a combination of nanofabrication and nano-imaging allows us to record the full two-dimensional build-up of quantum interference patterns in real time for phthalocyanine molecules and for derivatives of phthalocyanine molecules, which have masses of 514 AMU and 1,298 AMU respectively. A laser-controlled micro-evaporation source was used to produce a beam of molecules with the required intensity and coherence, and the gratings were machined in 10-nm-thick silicon nitride membranes to reduce the effect of van der Waals forces. Wide-field fluorescence microscopy detected the position of each molecule with an accuracy of 10 nm and revealed the build-up of a deterministic ensemble interference pattern from single molecules that arrived stochastically at the detector. In addition to providing this particularly clear demonstration of wave-particle duality, our approach could also be used to study larger molecules and explore the boundary between quantum and classical physics.

On the dissolution properties of GaAs in Ga

NASA Technical Reports Server (NTRS)

Davidson, M. C.; Moynahan, A. H.

1977-01-01

The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

Resonance fluorescence and quantum interference of a single NV center

NASA Astrophysics Data System (ADS)

Ma, Yong-Hong; Zhang, Xue-Feng; Wu, E.

2017-11-01

The detection of a single nitrogen-vacancy center in diamond has attracted much interest, since it is expected to lead to innovative applications in various domains of quantum information, including quantum metrology, information processing and communications, as well as in various nanotechnologies, such as biological and subdiffraction limit imaging, and tests of entanglement in quantum mechanics. We propose a novel scheme of a single NV center coupled with a multi-mode superconducting microwave cavity driven by coherent fields in squeezed vacuum. We numerically investigate the spectra in-phase quadrature and out-of-phase quadrature for different driving regimes with or without detunings. It shows that the maximum squeezing can be obtained for optimal Rabi fields. Moreover, with the same parameters, the maximum squeezing is greatly increased when the detunings are nonzero compared to the resonance case.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

Parameter regimes for a single sequential quantum repeater

NASA Astrophysics Data System (ADS)

Rozpędek, F.; Goodenough, K.; Ribeiro, J.; Kalb, N.; Caprara Vivoli, V.; Reiserer, A.; Hanson, R.; Wehner, S.; Elkouss, D.

2018-07-01

Quantum key distribution allows for the generation of a secret key between distant parties connected by a quantum channel such as optical fibre or free space. Unfortunately, the rate of generation of a secret key by direct transmission is fundamentally limited by the distance. This limit can be overcome by the implementation of so-called quantum repeaters. Here, we assess the performance of a specific but very natural setup called a single sequential repeater for quantum key distribution. We offer a fine-grained assessment of the repeater by introducing a series of benchmarks. The benchmarks, which should be surpassed to claim a working repeater, are based on finite-energy considerations, thermal noise and the losses in the setup. In order to boost the performance of the studied repeaters we introduce two methods. The first one corresponds to the concept of a cut-off, which reduces the effect of decoherence during the storage of a quantum state by introducing a maximum storage time. Secondly, we supplement the standard classical post-processing with an advantage distillation procedure. Using these methods, we find realistic parameters for which it is possible to achieve rates greater than each of the benchmarks, guiding the way towards implementing quantum repeaters.

Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

NASA Astrophysics Data System (ADS)

Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2015-12-01

In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

Growing High-Quality InAs Quantum Dots for Infrared Lasers

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Uhl, David

2004-01-01

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots.

PubMed

Francaviglia, Luca; Giunto, Andrea; Kim, Wonjong; Romero-Gomez, Pablo; Vukajlovic-Plestina, Jelena; Friedl, Martin; Potts, Heidi; Güniat, Lucas; Tütüncüoglu, Gözde; Fontcuberta I Morral, Anna

2018-04-11

Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Online evolution reconstruction from a single measurement record with random time intervals for quantum communication

NASA Astrophysics Data System (ADS)

Zhou, Hua; Su, Yang; Wang, Rong; Zhu, Yong; Shen, Huiping; Pu, Tao; Wu, Chuanxin; Zhao, Jiyong; Zhang, Baofu; Xu, Zhiyong

2017-10-01

Online reconstruction of a time-variant quantum state from the encoding/decoding results of quantum communication is addressed by developing a method of evolution reconstruction from a single measurement record with random time intervals. A time-variant two-dimensional state is reconstructed on the basis of recovering its expectation value functions of three nonorthogonal projectors from a random single measurement record, which is composed from the discarded qubits of the six-state protocol. The simulated results prove that our method is robust to typical metro quantum channels. Our work extends the Fourier-based method of evolution reconstruction from the version for a regular single measurement record with equal time intervals to a unified one, which can be applied to arbitrary single measurement records. The proposed protocol of evolution reconstruction runs concurrently with the one of quantum communication, which can facilitate the online quantum tomography.

Mode locking of electron spin coherences in singly charged quantum dots.

PubMed

Greilich, A; Yakovlev, D R; Shabaev, A; Efros, Al L; Yugova, I A; Oulton, R; Stavarache, V; Reuter, D; Wieck, A; Bayer, M

2006-07-21

The fast dephasing of electron spins in an ensemble of quantum dots is detrimental for applications in quantum information processing. We show here that dephasing can be overcome by using a periodic train of light pulses to synchronize the phases of the precessing spins, and we demonstrate this effect in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. This mode locking leads to constructive interference of contributions to Faraday rotation and presents potential applications based on robust quantum coherence within an ensemble of dots.

Entanglement-secured single-qubit quantum secret sharing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scherpelz, P.; Resch, R.; Berryrieser, D.

In single-qubit quantum secret sharing, a secret is shared between N parties via manipulation and measurement of one qubit at a time. Each qubit is sent to all N parties in sequence; the secret is encoded in the first participant's preparation of the qubit state and the subsequent participants' choices of state rotation or measurement basis. We present a protocol for single-qubit quantum secret sharing using polarization entanglement of photon pairs produced in type-I spontaneous parametric downconversion. We investigate the protocol's security against eavesdropping attack under common experimental conditions: a lossy channel for photon transmission, and imperfect preparation of themore » initial qubit state. A protocol which exploits entanglement between photons, rather than simply polarization correlation, is more robustly secure. We implement the entanglement-based secret-sharing protocol with 87% secret-sharing fidelity, limited by the purity of the entangled state produced by our present apparatus. We demonstrate a photon-number splitting eavesdropping attack, which achieves no success against the entanglement-based protocol while showing the predicted rate of success against a correlation-based protocol.« less

Wavevector multiplexed atomic quantum memory via spatially-resolved single-photon detection.

PubMed

Parniak, Michał; Dąbrowski, Michał; Mazelanik, Mateusz; Leszczyński, Adam; Lipka, Michał; Wasilewski, Wojciech

2017-12-15

Parallelized quantum information processing requires tailored quantum memories to simultaneously handle multiple photons. The spatial degree of freedom is a promising candidate to facilitate such photonic multiplexing. Using a single-photon resolving camera, we demonstrate a wavevector multiplexed quantum memory based on a cold atomic ensemble. Observation of nonclassical correlations between Raman scattered photons is confirmed by an average value of the second-order correlation function [Formula: see text] in 665 separated modes simultaneously. The proposed protocol utilizing the multimode memory along with the camera will facilitate generation of multi-photon states, which are a necessity in quantum-enhanced sensing technologies and as an input to photonic quantum circuits.

Quantum optics with single nanodiamonds flying over gold films: Towards a Robust quantum plasmonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mollet, O.; Drezet, A.; Huant, S.

2013-12-04

A nanodiamond (ND) hosting nitrogen-vacancy (NV) color centers is attached on the apex of an optical tip for near-field microscopy. Its fluorescence is used to launch surface plasmon-polaritons (SPPs) in a thin polycrystalline gold film. It is shown that the quantum nature of the initial source of light is preserved after conversion to SPPs. This opens the way to a deterministic quantum plasmonics, where single SPPs can be injected at well-defined positions in a plasmonic device produced by top-down approaches.

Spatial structure of single and interacting Mn acceptors in GaAs

NASA Astrophysics Data System (ADS)

Koenraad, Paul

2005-03-01

Ferromagnetic semiconductors such as Ga1-xMnxAs are receiving a lot of attention at the moment because of their application in spintronic devices. However, despite intense study of deep acceptors in III-V semiconductors such as MnGa, little information has been obtained on their electronic properties at the atomic scale. Yet the spatial shape of the Mn acceptor state will influence the hole-mediated Mn-Mn coupling and thus all of the magnetic properties of ferromagnetic semiconductors such as Ga1-xMnxAs. This study presents an experimental and theoretical description of the spatial symmetry of the Mn acceptor wave-function in GaAs. We present measurements of the spatial mapping of the anisotropic wavefunction of a hole localized at a Mn acceptor. To achieve this, we have used the STM tip not only to image the Mn acceptor but also to manipulate its charge state A^0/A^- at room temperature. Within an envelope function effective mass model (EFM) the anisotropy in the acceptor wave-function can be traced to the influence of the cubic symmetry of the GaAs crystal which selects specific d-states that mix into the ground state due to the spin-orbit interaction in the valence band. Comparison with calculations based on a tight-binding model (TBM) for the Mn acceptor structure supports this conclusion. Using the same experimental and theoretical approach we furthermore explored the interaction between Mn acceptors directly by analyzing close Mn-Mn pairs, which were separated by less than 2 nm. We will discuss some implications of these results for Mn delta-doped layers grown on differently oriented growth surfaces.

Longitudinal wave function control in single quantum dots with an applied magnetic field

PubMed Central

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-01

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018

Longitudinal wave function control in single quantum dots with an applied magnetic field.

PubMed

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-27

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Single-copy entanglement in critical quantum spin chains

NASA Astrophysics Data System (ADS)

Eisert, J.; Cramer, M.

2005-10-01

We consider the single-copy entanglement as a quantity to assess quantum correlations in the ground state in quantum many-body systems. We show for a large class of models that already on the level of single specimens of spin chains, criticality is accompanied with the possibility of distilling a maximally entangled state of arbitrary dimension from a sufficiently large block deterministically, with local operations and classical communication. These analytical results—which refine previous results on the divergence of block entropy as the rate at which maximally entangled pairs can be distilled from many identically prepared chains—are made quantitative for general isotropic translationally invariant spin chains that can be mapped onto a quasifree fermionic system, and for the anisotropic XY model. For the XX model, we provide the asymptotic scaling of ˜(1/6)log2(L) , and contrast it with the block entropy.

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.

PubMed

Deshpande, Saniya; Heo, Junseok; Das, Ayan; Bhattacharya, Pallab

2013-01-01

In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that short-wavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In0.25Ga0.75N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of ~70%.

Can a quantum state over time resemble a quantum state at a single time?

NASA Astrophysics Data System (ADS)

Horsman, Dominic; Heunen, Chris; Pusey, Matthew F.; Barrett, Jonathan; Spekkens, Robert W.

2017-09-01

The standard formalism of quantum theory treats space and time in fundamentally different ways. In particular, a composite system at a given time is represented by a joint state, but the formalism does not prescribe a joint state for a composite of systems at different times. If there were a way of defining such a joint state, this would potentially permit a more even-handed treatment of space and time, and would strengthen the existing analogy between quantum states and classical probability distributions. Under the assumption that the joint state over time is an operator on the tensor product of single-time Hilbert spaces, we analyse various proposals for such a joint state, including one due to Leifer and Spekkens, one due to Fitzsimons, Jones and Vedral, and another based on discrete Wigner functions. Finding various problems with each, we identify five criteria for a quantum joint state over time to satisfy if it is to play a role similar to the standard joint state for a composite system: that it is a Hermitian operator on the tensor product of the single-time Hilbert spaces; that it represents probabilistic mixing appropriately; that it has the appropriate classical limit; that it has the appropriate single-time marginals; that composing over multiple time steps is associative. We show that no construction satisfies all these requirements. If Hermiticity is dropped, then there is an essentially unique construction that satisfies the remaining four criteria.

Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

PubMed

Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

2017-03-01

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

PubMed

Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

2014-01-01

First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Displacement damage and predicted non-ionizing energy loss in GaAs

NASA Astrophysics Data System (ADS)

Gao, Fei; Chen, Nanjun; Hernandez-Rivera, Efrain; Huang, Danhong; LeVan, Paul D.

2017-03-01

Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been applied to study the defect production for lattice atom recoil energies from 500 eV to 20 keV in gallium arsenide (GaAs). At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters. However, a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies larger than 2 keV. The results reveal a non-linear defect production that increases with the PKA energy. The damage density within a cascade core is evaluated, and used to develop a model that describes a new energy partition function. Based on the MD results, we have developed a model to determine the non-ionizing energy loss (NIEL) in GaAs, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The calculated NIEL predictions are compared with the available data, thus validating the NIEL model developed in this study.

Characteristics of GaAs with inverted thermal conversion

NASA Technical Reports Server (NTRS)

Kang, C. H.; Lagowski, J.; Gatos, H. C.

1987-01-01

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

Linewidth and tuning characteristics of terahertz quantum cascade lasers.

PubMed

Barkan, A; Tittel, F K; Mittleman, D M; Dengler, R; Siegel, P H; Scalari, G; Ajili, L; Faist, J; Beere, H E; Linfield, E H; Davies, A G; Ritchie, D A

2004-03-15

We have measured the spectral linewidths of three continuous-wave quantum cascade lasers operating at terahertz frequencies by heterodyning the free-running quantum cascade laser with two far-infrared gas lasers. Beat notes are detected with a GaAs diode mixer and a microwave spectrum analyzer, permitting very precise frequency measurements and giving instantaneous linewidths of less than -30 kHz. Characteristics are also reported for frequency tuning as the injection current is varied.

Optical Parametric Amplification of Single Photon: Statistical Properties and Quantum Interference

NASA Astrophysics Data System (ADS)

Xu, Xue-Xiang; Yuan, Hong-Chun

2014-05-01

By using phase space method, we theoretically investigate the quantum statistical properties and quantum interference of optical parametric amplification of single photon. The statistical properties, such as the Wigner function (WF), average photon number, photon number distribution and parity, are derived analytically for the fields of the two output ports. The results indicate that the fields in the output ports are multiphoton states rather than single photon state due to the amplification of the optical parametric amplifiers (OPA). In addition, the phase sensitivity is also examined by using the detection scheme of parity measurement.

The Heteronuclear Single-Quantum Correlation (HSQC) Experiment: Vectors versus Product Operators

ERIC Educational Resources Information Center

de la Vega-Herna´ndez, Karen; Antuch, Manuel

2015-01-01

A vectorial representation of the full sequence of events occurring during the 2D-NMR heteronuclear single-quantum correlation (HSQC) experiment is presented. The proposed vectorial representation conveys an understanding of the magnetization evolution during the HSQC pulse sequence for those who have little or no quantum mechanical background.…

Quantum confined Stark effects of single dopant in polarized hemispherical quantum dot: Two-dimensional finite difference approach and Ritz-Hassé variation method

NASA Astrophysics Data System (ADS)

El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

2018-05-01

Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.

Strong Light-Matter Interactions in Single Open Plasmonic Nanocavities at the Quantum Optics Limit.

PubMed

Liu, Renming; Zhou, Zhang-Kai; Yu, Yi-Cong; Zhang, Tengwei; Wang, Hao; Liu, Guanghui; Wei, Yuming; Chen, Huanjun; Wang, Xue-Hua

2017-06-09

Reaching the quantum optics limit of strong light-matter interactions between a single exciton and a plasmon mode is highly desirable, because it opens up possibilities to explore room-temperature quantum devices operating at the single-photon level. However, two challenges severely hinder the realization of this limit: the integration of single-exciton emitters with plasmonic nanostructures and making the coupling strength at the single-exciton level overcome the large damping of the plasmon mode. Here, we demonstrate that these two hindrances can be overcome by attaching individual J aggregates to single cuboid Au@Ag nanorods. In such hybrid nanosystems, both the ultrasmall mode volume of ∼71  nm^{3} and the ultrashort interaction distance of less than 0.9 nm make the coupling coefficient between a single J-aggregate exciton and the cuboid nanorod as high as ∼41.6  meV, enabling strong light-matter interactions to be achieved at the quantum optics limit in single open plasmonic nanocavities.

Sustained State-Independent Quantum Contextual Correlations from a Single Ion

NASA Astrophysics Data System (ADS)

Leupold, F. M.; Malinowski, M.; Zhang, C.; Negnevitsky, V.; Alonso, J.; Home, J. P.; Cabello, A.

2018-05-01

We use a single trapped-ion qutrit to demonstrate the quantum-state-independent violation of noncontextuality inequalities using a sequence of randomly chosen quantum nondemolition projective measurements. We concatenate 53 ×106 sequential measurements of 13 observables, and unambiguously violate an optimal noncontextual bound. We use the same data set to characterize imperfections including signaling and repeatability of the measurements. The experimental sequence was generated in real time with a quantum random number generator integrated into our control system to select the subsequent observable with a latency below 50 μ s , which can be used to constrain contextual hidden-variable models that might describe our results. The state-recycling experimental procedure is resilient to noise and independent of the qutrit state, substantiating the fact that the contextual nature of quantum physics is connected to measurements and not necessarily to designated states. The use of extended sequences of quantum nondemolition measurements finds applications in the fields of sensing and quantum information.

Modeling of the whispering gallery mode in microdisk and microgear resonators using a Toeplitz matrix formalism for single-photon source

NASA Astrophysics Data System (ADS)

Attia, Moez; Gueddana, Amor; Chatta, Rihab; Morand, Alain

2013-09-01

The work presented in this paper develops a new formalism to design microdisks and microgears structures. The main objective is to study the optics and geometrics parameters influence on the microdisks and microgears structures resonance behavior. This study is conducted to choice a resonance structure with height quality factor Q to be associated with Quantum dot to form a single photon source. This new method aims to design resonant structures that are simpler and requires less computing performances than FDTD and Floquet Block methods. This formalism is based on simplifying Fourier transformed and using toeplitz matrix writing. This new writing allows designing all kind of resonance structures with any defect and any modification. In other study we have design a quantum dot emitting a photon at 1550 nm of the fundamental mode, but the quantum dot emits other photons at other wavelengths. The focus of the resonant structure and the quantum dot association is the resonance of the photon at 1550 nm and the elimination of all other photons with others energies. The quantum dot studied in [1] is an InAs/GaAs quantum dot, we design an GaAS microdisk and microgear and we compare the quality factor Q of this two structures and we conclude that the microgear is more appropriated to be associate to the quantum dot and increase the probability P1 to obtain a single photon source at 1550 nm and promotes the obtaining of single photon. The performance improving of the resonant structure is able to increase the success of quantum applications such as quantum gates based on single photon source.

Kondo blockade due to quantum interference in single-molecule junctions

PubMed Central

Mitchell, Andrew K.; Pedersen, Kim G. L.; Hedegård, Per; Paaske, Jens

2017-01-01

Molecular electronics offers unique scientific and technological possibilities, resulting from both the nanometre scale of the devices and their reproducible chemical complexity. Two fundamental yet different effects, with no classical analogue, have been demonstrated experimentally in single-molecule junctions: quantum interference due to competing electron transport pathways, and the Kondo effect due to entanglement from strong electronic interactions. Here we unify these phenomena, showing that transport through a spin-degenerate molecule can be either enhanced or blocked by Kondo correlations, depending on molecular structure, contacting geometry and applied gate voltages. An exact framework is developed, in terms of which the quantum interference properties of interacting molecular junctions can be systematically studied and understood. We prove that an exact Kondo-mediated conductance node results from destructive interference in exchange-cotunneling. Nonstandard temperature dependences and gate-tunable conductance peaks/nodes are demonstrated for prototypical molecular junctions, illustrating the intricate interplay of quantum effects beyond the single-orbital paradigm. PMID:28492236

Quantum interference of electrically generated single photons from a quantum dot.

PubMed

Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J

2010-07-09

Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.

On-chip interference of single photons from an embedded quantum dot and an external laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Bentham, C.; O'Hara, J.

2016-06-20

In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler.more » This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.« less

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Electrodeposition of Metal on GaAs Nanowires

NASA Astrophysics Data System (ADS)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

NASA Astrophysics Data System (ADS)

Pieczarka, M.; Syperek, M.; Biegańska, D.; Gilfert, C.; Pavelescu, E. M.; Reithmaier, J. P.; Misiewicz, J.; Sek, G.

2017-05-01

The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-quantum well (QD-QW) structures by means of spatially resolved photoluminescence spectroscopy at low temperature. Under non-resonant photo-excitation above the GaAs bandgap, the lateral carrier transport reflected in the distorted electron-hole pair emission profiles is found to be mainly governed by high energy carriers created within the 3D density of states of GaAs. In contrast, for the case of resonant excitation tuned to the QW-like ground state of the QD-QW system, the emission profiles remain unaffected by the excess kinetic energy of carriers and local phonon heating within the pump spot. The lateral diffusion lengths are determined and present certain dependency on the coupling strength between QW and QDs. While for a strongly coupled structure the diffusion length is found to be around 0.8 μm and monotonically increases up to 1.4 μm with the excitation power density, in weakly coupled structures, it is determined to ca. 1.6 μm and remained virtually independent of the pumping power density.

GaAs Solar Cell Radiation Handbook

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.

1996-01-01

The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

Quantum Private Query Based on Bell State and Single Photons

NASA Astrophysics Data System (ADS)

Gao, Xiang; Chang, Yan; Zhang, Shi-Bin; Yang, Fan; Zhang, Yan

2018-03-01

Quantum private query (QPQ) can protect both user's and database holder's privacy. In this paper, we propose a novel quantum private query protocol based on Bell state and single photons. As far as we know, no one has ever proposed the QPQ based on Bell state. By using the decoherence-free (DF) states, our protocol can resist the collective noise. Besides that, our protocol is a one-way quantum protocol, which can resist the Trojan horse attack and reduce the communication complexity. Our protocol can not only guarantee the participants' privacy but also stand against an external eavesdropper.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1979-01-01

The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

Cavity Exciton-Polariton mediated, Single-Shot Quantum Non-Demolition measurement of a Quantum Dot Electron Spin

NASA Astrophysics Data System (ADS)

Puri, Shruti; McMahon, Peter; Yamamoto, Yoshihisa

2014-03-01

The quantum non-demolition (QND) measurement of a single electron spin is of great importance in measurement-based quantum computing schemes. The current single-shot readout demonstrations exhibit substantial spin-flip backaction. We propose a QND readout scheme for quantum dot (QD) electron spins in Faraday geometry, which differs from previous proposals and implementations in that it relies on a novel physical mechanism: the spin-dependent Coulomb exchange interaction between a QD spin and optically-excited quantum well (QW) microcavity exciton-polaritons. The Coulomb exchange interaction causes a spin-dependent shift in the resonance energy of the polarized polaritons, thus causing the phase and intensity response of left circularly polarized light to be different to that of the right circularly polarized light. As a result the QD electron's spin can be inferred from the response to a linearly polarized probe. We show that by a careful design of the system, any spin-flip backaction can be eliminated and a QND measurement of the QD electron spin can be performed within a few 10's of nanoseconds with fidelity 99:95%. This improves upon current optical QD spin readout techniques across multiple metrics, including fidelity, speed and scalability. National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan.

Patterned radial GaAs nanopillar solar cells.

PubMed

Mariani, Giacomo; Wong, Ping-Show; Katzenmeyer, Aaron M; Léonard, Francois; Shapiro, Joshua; Huffaker, Diana L

2011-06-08

Photovoltaic devices using GaAs nanopillar radial p-n junctions are demonstrated by means of catalyst-free selective-area metal-organic chemical vapor deposition. Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at ±1 V). The absence of metal catalyst contamination results in leakage currents of ∼236 nA at -1 V. High-resolution scanning photocurrent microscopy measurements reveal the independent functioning of each nanowire in the array with an individual peak photocurrent of ∼1 nA at 544 nm. External quantum efficiency shows that the photocarrier extraction highly depends on the degenerately doped transparent contact oxide. Two different top electrode schemes are adopted and characterized in terms of Hall, sheet resistance, and optical transmittance measurements.

Tunable single-photon multi-channel quantum router based on an optomechanical system

NASA Astrophysics Data System (ADS)

Ma, Peng-Cheng; Yan, Lei-Lei; Zhang, Jian; Chen, Gui-Bin; Li, Xiao-Wei; Zhan, You-Bang

2018-01-01

Routing of photons plays a key role in optical communication networks and quantum networks. Although the quantum routing of signals has been investigated for various systems, both in theory and experiment, the general form of a quantum router with multi-output terminals still needs to be explored. Here, we propose an experimentally accessible tunable single-photon multi-channel routing scheme using an optomechanics cavity which is Coulomb coupled to a nanomechanical resonator. The router can extract single photons from the coherent input signal and directly modulate them into three different output channels. More importantly, the two output signal frequencies can be selected by adjusting the Coulomb coupling strength. For application purposes, we justify that there is insignificant influence from the vacuum and thermal noises on the performance of the router under cryogenic conditions. Our proposal may pave a new avenue towards multi-channel routers and quantum networks.

Quantum Dot Platform for Single-Cell Molecular Profiling

NASA Astrophysics Data System (ADS)

Zrazhevskiy, Pavel S.

In-depth understanding of the nature of cell physiology and ability to diagnose and control the progression of pathological processes heavily rely on untangling the complexity of intracellular molecular mechanisms and pathways. Therefore, comprehensive molecular profiling of individual cells within the context of their natural tissue or cell culture microenvironment is essential. In principle, this goal can be achieved by tagging each molecular target with a unique reporter probe and detecting its localization with high sensitivity at sub-cellular resolution, primarily via microscopy-based imaging. Yet, neither widely used conventional methods nor more advanced nanoparticle-based techniques have been able to address this task up to date. High multiplexing potential of fluorescent probes is heavily restrained by the inability to uniquely match probes with corresponding molecular targets. This issue is especially relevant for quantum dot probes---while simultaneous spectral imaging of up to 10 different probes is possible, only few can be used concurrently for staining with existing methods. To fully utilize multiplexing potential of quantum dots, it is necessary to design a new staining platform featuring unique assignment of each target to a corresponding quantum dot probe. This dissertation presents two complementary versatile approaches towards achieving comprehensive single-cell molecular profiling and describes engineering of quantum dot probes specifically tailored for each staining method. Analysis of expanded molecular profiles is achieved through augmenting parallel multiplexing capacity with performing several staining cycles on the same specimen in sequential manner. In contrast to other methods utilizing quantum dots or other nanoparticles, which often involve sophisticated probe synthesis, the platform technology presented here takes advantage of simple covalent bioconjugation and non-covalent self-assembly mechanisms for straightforward probe

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

NASA Astrophysics Data System (ADS)

Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael

2014-07-01

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ˜ 10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ˜ 25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μ m to 1 μ m, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L i is varied. A splitting ratio of 50:50 is observed for L i ˜ 9 ± 1 μ m and 1 μ m wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

Fabrication and characterization of multi-layer InAs/InGaAs quantum dot p-i-n GaAs solar cells grown on silicon substrates

NASA Astrophysics Data System (ADS)

Omri, M.; Sayari, A.; Sfaxi, L.

2018-01-01

This paper reports on InAs/InGaAs quantum dot solar cells (QDSCs) deposited by molecular beam epitaxy (MBE) on (001) n-type silicon ( n-Si) substrates. In-situ RHEED measurements show that InAs/InGaAs QDs SC has a high crystalline structure. The dislocation density in the active layer of the InAs/InGaAs QDSC and the lattice mismatch in the GaAs layer can be reduced by using an Si rough surface buffer layer (RSi). To show the effect of the QD layers, a reference SC with the same p-i-n structure as the InAs/InGaAs QDSC, but without InAs QDs, is also grown. The two SCs were studied by sepectroscopic ellipsometry (SE), in the 1-6 eV photon energy range, photoluminescence and photocurrent measurements. The optical constants of the two devices are determined in the photon energy range 1-6 eV from the SE data. The dominant features in the dielectric function spectra at 3 and 4.5 eV are attributed, respectively, to the E 1 and E 2 critical point structures of GaAs and InAs. The low-temperature photoluminescence spectrum of the InAs/InGaAs QDSC shows ground-state emissions, respectively, from the relatively small QDs near 1081 nm and from the large QDs near 1126 nm. Photocurrent measurements confirm the improved absorption performance (up to 1200 nm) of the InAs QDs SC which is ascribed to the optical absorption from the InAs/InGaAs QDs and the Si substrate as demonstrated by SE and photoluminescence measurements.

Mach-Zehnder interferometry using broken symmetry quantum Hall edges in graphene

NASA Astrophysics Data System (ADS)

Wei, Di; van der Sar, Toeno; Sanchez-Yamagishi, Javier; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo; Halperin, Bertrand; Yacoby, Amir

Graphene has emerged as a unique platform for studying electron optics, particularly in the presence of a magnetic field. Here, we engineer a Mach-Zehnder interferometer using quantum Hall edge states that co-propagate along a single gate-defined NP interface. We use encapsulated monolayer graphene, clean enough to lift the four-fold spin and valley degeneracy. In order to create two separate co-propagating paths, we exploit the suppression of edge state scattering along gate defined edges, and use scattering sites at the ends of the NP interface to form our beam splitters. We observe conductance oscillations as a function of magnetic and electric field indicative of coherent transport, and measure values consistent with spin-selective scattering. We can tune our interferometer to regimes of high visibility (>98 %), surpassing the values reported for GaAs quantum-well Mach-Zehnder interferometers. These results demonstrate a promising method to observe interference between fractional charges in graphene.

Single-shot work extraction in quantum thermodynamics revisited

NASA Astrophysics Data System (ADS)

Wang, Shang-Yung

2018-01-01

We revisit the problem of work extraction from a system in contact with a heat bath to a work storage system, and the reverse problem of state formation from a thermal system state in single-shot quantum thermodynamics. A physically intuitive and mathematically simple approach using only elementary majorization theory and matrix analysis is developed, and a graphical interpretation of the maximum extractable work, minimum work cost of formation, and corresponding single-shot free energies is presented. This approach provides a bridge between two previous methods based respectively on the concept of thermomajorization and a comparison of subspace dimensions. In addition, a conceptual inconsistency with regard to general work extraction involving transitions between multiple energy levels of the work storage system is clarified and resolved. It is shown that an additional contribution to the maximum extractable work in those general cases should be interpreted not as work extracted from the system, but as heat transferred from the heat bath. Indeed, the additional contribution is an artifact of a work storage system (essentially a suspended ‘weight’ that can be raised or lowered) that does not truly distinguish work from heat. The result calls into question the common concept that a work storage system in quantum thermodynamics is simply the quantum version of a suspended weight in classical thermodynamics.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.

PubMed

Hamada, Hiroki

2017-07-28

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1-11] and [11-1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

A photon-photon quantum gate based on a single atom in an optical resonator.

PubMed

Hacker, Bastian; Welte, Stephan; Rempe, Gerhard; Ritter, Stephan

2016-08-11

That two photons pass each other undisturbed in free space is ideal for the faithful transmission of information, but prohibits an interaction between the photons. Such an interaction is, however, required for a plethora of applications in optical quantum information processing. The long-standing challenge here is to realize a deterministic photon-photon gate, that is, a mutually controlled logic operation on the quantum states of the photons. This requires an interaction so strong that each of the two photons can shift the other's phase by π radians. For polarization qubits, this amounts to the conditional flipping of one photon's polarization to an orthogonal state. So far, only probabilistic gates based on linear optics and photon detectors have been realized, because "no known or foreseen material has an optical nonlinearity strong enough to implement this conditional phase shift''. Meanwhile, tremendous progress in the development of quantum-nonlinear systems has opened up new possibilities for single-photon experiments. Platforms range from Rydberg blockade in atomic ensembles to single-atom cavity quantum electrodynamics. Applications such as single-photon switches and transistors, two-photon gateways, nondestructive photon detectors, photon routers and nonlinear phase shifters have been demonstrated, but none of them with the ideal information carriers: optical qubits in discriminable modes. Here we use the strong light-matter coupling provided by a single atom in a high-finesse optical resonator to realize the Duan-Kimble protocol of a universal controlled phase flip (π phase shift) photon-photon quantum gate. We achieve an average gate fidelity of (76.2 ± 3.6) per cent and specifically demonstrate the capability of conditional polarization flipping as well as entanglement generation between independent input photons. This photon-photon quantum gate is a universal quantum logic element, and therefore could perform most existing two-photon operations

Quantum Key Distribution Using Polarized Single Photons

DTIC Science & Technology

2009-04-01

liquid helium the SSPD with a low - noise , cryogenic high-electron-mobility transistor (HEMT) with high-input impedance. This arrangement allowed us...Sobolewski, IEEE Trans. Appl. Supercon., accepted (2009). 19. " Measurements of amplitude distributions of dark counts and photon counts in NbN ...75, 174507 (2007). 6. "Fiber-Coupled NbN Superconducting Single-Photon Detectors for Quantum Correlation Measurements ," W. Slysz, M. Wegrzecki, J

Characterisation of semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

1982-01-01

Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.