Conceptual design study of concentrator enhanced solar arrays for space applications. Performance evaluation of 5 KW and 20 KW systems in Si and GaAs at 1 AU employing a flat plate trough concentrator

NASA Technical Reports Server (NTRS)

1980-01-01

A simple, efficient and very lightweight preliminary design for a 5 KW and 20 KW BOL output concentrated array evolved and is described by drawings. The relative effectiveness of this design, as compared to an unconcentrated planar array of equal power output, was measured by comparing power to mass performance of and the solar cell area required by each. Improvements in power to mass performance as high as 42% together with array area size reduction of 57% are possible in GaAs systems. By contrast, when the same concentrator design is applied to silicon systems, no improvement in power to mass can be obtained although array area reductions as high as 35% are obtainable.

Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

NASA Technical Reports Server (NTRS)

Slifer, Luther W., Jr.

1991-01-01

One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Astrophysics Data System (ADS)

Dinetta, L. C.; Hannon, M. H.

1995-10-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.

1995-01-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Space qualification of IR-reflecting coverslides for GaAs solar cells

NASA Technical Reports Server (NTRS)

Meulenberg, Andrew

1995-01-01

Improvements to GaAs solar array performance, from the use on solar cell coverslides of several reflecting coatings that reject unusable portions of the solar spectrum, are quantified. Blue-red-rejection (BRR) coverslides provide both infrared reflection (IRR) and ultraviolet rejection (UVR). BRR coverslides were compared to conventional antireflection (AR) and ultraviolet (UV) coated coverslides. A 2% improvement in peak-power output, relative to that from Ar-coated coverslides, is seen for cells utilizing BRR coverslides with the widest bandpass. Coverslide BRR-filter bandpass width and covered-solar-cell short-circuit current is a function of incident light angle and the observed narrower-bandpass filters are more sensitive to change in angle from the normal than are wide-bandpass filters. The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has indicated that all multilayer coatings on coverslides and solar cells will experience degradation from the space environment (UV and/or electrons). Five types of coverslide coatings, designed for GaAs solar cells, were tested as part of a NASA-sponsored space-flight qualification for BRR, multi-layer-coated, coverslides. The reponse to the different radiations varied with the coatings. The extent of degradation and its consequences on the solar cell electrical characteristics depend upon the coatings and the radiation. In some cases, an improved optical coupling was observed during long-term UV exposure to the optical stack. The benefits of multi-layered solar cell optics may depend upon both the duration and the radiation environment of a mission.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Enhanced photovoltaic performance of an inclined nanowire array solar cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2015-11-30

An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

Gallium arsenide (GaAs) solar cell modeling studies

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.

1980-01-01

Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

Effects of low energy proton, electron, and simultaneously combined proton and electron environments in silicon and GaAs solar cells

NASA Technical Reports Server (NTRS)

Horne, W. E.; Day, A. C.; Russell, D. A.

1980-01-01

Degradation of silicon and GaAs solar cells due to exposures to low energy proton and electron environments and annealing data for these cells are discussed. Degradation of silicon cells in simultaneously combined electron and low energy proton environments and previous experimental work is summarized and evaluated. The deficiencies in current solar array damage prediction techniques indicated by these data and the relevance of these deficiencies to specific missions such as intermediate altitude orbits and orbital transfer vehicles using solar electric propulsion systems are considered.

Integrated Antenna/Solar Array Cell (IA/SAC) System for Flexible Access Communications

NASA Technical Reports Server (NTRS)

Lee, Ricard Q.; Clark, Eric B.; Pal, Anna Maria T.; Wilt, David M.; Mueller, Carl H.

2004-01-01

Present satellite communications systems normally use separate solar cells and antennas. Since solar cells generally account for the largest surface area of the spacecraft, co-locating the antenna and solar cells on the same substrate opens the possibility for a number of data-rate-enhancing communications link architecture that would have minimal impact on spacecraft weight and size. The idea of integrating printed planar antenna and solar array cells on the same surface has been reported in the literature. The early work merely attempted to demonstrate the feasibility by placing commercial solar cells besides a patch antenna. Recently, Integrating multiple antenna elements and solar cell arrays on the same surface was reported for both space and terrestrial applications. The application of photovoltaic solar cell in a planar antenna structure where the radiating patch antenna is replaced by a Si solar cell has been demonstrated in wireless communication systems (C. Bendel, J. Kirchhof and N. Henze, 3rd Would Photovotaic Congress, Osaka, Japan, May 2003). Based on a hybrid approach, a 6x1 slot array with circularly polarized crossdipole elements co-located on the same surface of the solar cells array has been demonstrated (S. Vaccaro, J. R. Mosig and P. de Maagt, IEEE Trans. Ant. and Propag., Vol. 5 1, No. 8, Aug. 2003). Amorphous silicon solar cells with about 5-10% efficiency were used in these demonstrations. This paper describes recent effort to integrate advanced solar cells with printed planar antennas. Compared to prior art, the proposed WSAC concept is unique in the following ways: 1) Active antenna element will be used to achieve dynamic beam steering; 2) High efficiency (30%) GaAs multi-junction solar cells will be used instead of Si, which has an efficiency of about 15%; 3) Antenna and solar cells are integrated on a common GaAs substrate; and 4) Higher data rate capability. The IA/SAC is designed to operate at X-band (8-12 GH) and higher frequencies Higher operating frequencies enable greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of GaAs solar cell MIMs (Monolithically Integrated Module) with a single patch antenna on the opposite side of the substrate. Subsequent work will involve the integration of MIMs and antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Study of multi-kW solar arrays for Earth orbit application

NASA Technical Reports Server (NTRS)

1980-01-01

Planar and concentrator solar array configurations based on silicon and gallium arsenide solar cells were conceptualized and on-orbit maintainability was addressed. Four basic categories emerged: (1) planar (non concentrated) with silicon cells, (2) low-CR (concentration ratio = 3.4) with silicon cells, (3) low-CR with GaAs, and (4) high-CR (concentration ratio = 62.5) with GaAs. A very high-CR (concentration ratio = 200) was investigated but rejected on thermal grounds. Nonrecurring and recurring cost elements for each of the four concepts selected were compared over a 15 year life cycle. Under conditions where the gallium arsenide cells can be produced for less than $25 per 2 x 2 cm, the low CR concentrator emerges as the most cost effective configuration. However, the producibility risk remains higher on the gallium arsenide cell.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

PubMed

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Indium phosphide solar cell research in the United States: Comparison with non-photovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with efficiencies approaching 19 percent are demonstrated, while 17 percent is achieved for ITO/InP cells. The superior radiation resistance of the two latter cell configurations over both Si and GaAs cells has been shown. InP cells aboard the LIPS3 satellite show no degradation after more than a year in orbit. Computed array specific powers are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

The impact of solar cell technology on planar solar array performance

NASA Technical Reports Server (NTRS)

Mills, Michael W.; Kurland, Richard M.

1989-01-01

The results of a study into the potential impact of advanced solar cell technologies on the characteristics (weight, cost, area) of typical planar solar arrays designed for low, medium and geosynchronous altitude earth orbits are discussed. The study considered planar solar array substrate designs of lightweight, rigid-panel graphite epoxy and ultra-lightweight Kapton. The study proposed to answer the following questions: Do improved cell characteristics translate into array-level weight, size and cost improvements; What is the relative importance of cell efficiency, weight and cost with respect to array-level performance; How does mission orbital environment affect array-level performance. Comparisons were made at the array level including all mechanisms, hinges, booms, and harnesses. Array designs were sized to provide 5kW of array power (not spacecraft bus power, which is system dependent but can be scaled from given values). The study used important grass roots issues such as use of the GaAs radiation damage coefficients as determined by Anspaugh. Detailed costing was prepared, including cell and cover costs, and manufacturing attrition rates for the various cell types.

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Impact of Solar Array Designs on High Voltage Operations

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

2006-01-01

As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Low energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Kamath, S.; Knechtli, R. C.

1979-01-01

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

The NASA program in Space Energy Conversion Research and Technology

NASA Astrophysics Data System (ADS)

Mullin, J. P.; Flood, D. J.; Ambrus, J. H.; Hudson, W. R.

The considered Space Energy Conversion Program seeks advancement of basic understanding of energy conversion processes and improvement of component technologies, always in the context of the entire power subsystem. Activities in the program are divided among the traditional disciplines of photovoltaics, electrochemistry, thermoelectrics, and power systems management and distribution. In addition, a broad range of cross-disciplinary explorations of potentially revolutionary new concepts are supported under the advanced energetics program area. Solar cell research and technology are discussed, taking into account the enhancement of the efficiency of Si solar cells, GaAs liquid phase epitaxy and vapor phase epitaxy solar cells, the use of GaAs solar cells in concentrator systems, and the efficiency of a three junction cascade solar cell. Attention is also given to blanket and array technology, the alkali metal thermoelectric converter, a fuel cell/electrolysis system, and thermal to electric conversion.

The NASA program in Space Energy Conversion Research and Technology

NASA Technical Reports Server (NTRS)

Mullin, J. P.; Flood, D. J.; Ambrus, J. H.; Hudson, W. R.

1982-01-01

The considered Space Energy Conversion Program seeks advancement of basic understanding of energy conversion processes and improvement of component technologies, always in the context of the entire power subsystem. Activities in the program are divided among the traditional disciplines of photovoltaics, electrochemistry, thermoelectrics, and power systems management and distribution. In addition, a broad range of cross-disciplinary explorations of potentially revolutionary new concepts are supported under the advanced energetics program area. Solar cell research and technology are discussed, taking into account the enhancement of the efficiency of Si solar cells, GaAs liquid phase epitaxy and vapor phase epitaxy solar cells, the use of GaAs solar cells in concentrator systems, and the efficiency of a three junction cascade solar cell. Attention is also given to blanket and array technology, the alkali metal thermoelectric converter, a fuel cell/electrolysis system, and thermal to electric conversion.

The JPL space photovoltaic program. [energy efficient so1 silicon solar cells for space applications

NASA Technical Reports Server (NTRS)

Scott-Monck, J. A.

1979-01-01

The development of energy efficient solar cells for space applications is discussed. The electrical performance of solar cells as a function of temperature and solar intensity and the influence of radiation and subsequent thermal annealing on the electrical behavior of cells are among the factors studied. Progress in GaAs solar cell development is reported with emphasis on improvement of output power and radiation resistance to demonstrate a solar cell array to meet the specific power and stability requirements of solar power satellites.

An Analytic Approach for Optimal Geometrical Design of GaAs Nanowires for Maximal Light Harvesting in Photovoltaic Cells

PubMed Central

Wu, Dan; Tang, Xiaohong; Wang, Kai; Li, Xianqiang

2017-01-01

Semiconductor nanowires(NWs) with subwavelength scale diameters have demonstrated superior light trapping features, which unravel a new pathway for low cost and high efficiency future generation solar cells. Unlike other published work, a fully analytic design is for the first time proposed for optimal geometrical parameters of vertically-aligned GaAs NW arrays for maximal energy harvesting. Using photocurrent density as the light absorbing evaluation standard, 2 μm length NW arrays whose multiple diameters and periodicity are quantitatively identified achieving the maximal value of 29.88 mA/cm2 under solar illumination. It also turns out that our method has wide suitability for single, double and four different diameters of NW arrays for highest photon energy harvesting. To validate this analytical method, intensive numerical three-dimensional finite-difference time-domain simulations of the NWs’ light harvesting are also carried out. Compared with the simulation results, the predicted maximal photocurrent densities lie within 1.5% tolerance for all cases. Along with the high accuracy, through directly disclosing the exact geometrical dimensions of NW arrays, this method provides an effective and efficient route for high performance photovoltaic design. PMID:28425488

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Modeling of high efficiency solar cells under laser pulse for power beaming applications

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1994-01-01

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Spectrophotovoltaic orbital power generation

NASA Technical Reports Server (NTRS)

Onffroy, J. R.

1980-01-01

The feasibilty of a spectrophotovoltaic orbital power generation system that optically concentrates solar energy is demonstrated. A dichroic beam-splitting mirror is used to divide the solar spectrum into two wavebands. Absorption of these wavebands by GaAs and Si solar cell arrays with matched energy bandgaps increases the cell efficiency while decreasing the amount of heat that must be rejected. The projected cost per peak watt if this system is $2.50/W sub p.

Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

PubMed

Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

2017-11-10

Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

Recent results from advanced research on space solar cells at NASA

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1990-01-01

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 pm) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

PubMed

Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

2016-12-01

Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

Mechanical design of a low concentration ratio solar array for a space station application

NASA Technical Reports Server (NTRS)

Biss, M. S.; Hsu, L.

1983-01-01

This paper describes a preliminary study and conceptual design of a low concentration ratio solar array for a space station application with approximately a 100 kW power requirement. The baseline design calls for a multiple series of inverted, truncated, pyramidal optical elements with a geometric concentration ratio (GCR) of 6. It also calls for low life cycle cost, simple on-orbit maintainability, 1984 technology readiness date, and gallium arsenide (GaAs) of silicon (Si) solar cell interchangeability. Due to the large area needed to produce the amount of power required for the baseline space station, a symmetrical wing design, making maximum use of the commonality of parts approach, was taken. This paper will describe the mechanical and structural design of a mass-producible solar array that is very easy to tailor to the needs of the individual user requirement.

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

NASA Astrophysics Data System (ADS)

Dagytė, Vilgailė; Barrigón, Enrique; Zhang, Wei; Zeng, Xulu; Heurlin, Magnus; Otnes, Gaute; Anttu, Nicklas; Borgström, Magnus T.

2017-12-01

Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.

Mass properties survey of solar array technologies

NASA Technical Reports Server (NTRS)

Kraus, Robert

1991-01-01

An overview of the technologies, electrical performance, and mass characteristics of many of the presently available and the more advanced developmental space solar array technologies is presented. Qualitative trends and quantitative mass estimates as total array output power is increased from 1 kW to 5 kW at End of Life (EOL) from a single wing are shown. The array technologies are part of a database supporting an ongoing solar power subsystem model development for top level subsystem and technology analyses. The model is used to estimate the overall electrical and thermal performance of the complete subsystem, and then calculate the mass and volume of the array, batteries, power management, and thermal control elements as an initial sizing. The array types considered here include planar rigid panel designs, flexible and rigid fold-out planar arrays, and two concentrator designs, one with one critical axis and the other with two critical axes. Solar cell technologies of Si, GaAs, and InP were included in the analyses. Comparisons were made at the array level; hinges, booms, harnesses, support structures, power transfer, and launch retention mountings were included. It is important to note that the results presented are approximations, and in some cases revised or modified performance and mass estimates of specific designs.

Modified Reference SPS with Solid State Transmitting Antenna

NASA Technical Reports Server (NTRS)

Woodcock, G. R.; Sperber, B. R.

1980-01-01

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

A photovoltaic catenary-tent array for the Martian surface

NASA Technical Reports Server (NTRS)

Crutchik, M.; Colozza, Anthony J.; Appelbaum, J.

1993-01-01

To provide electrical power during an exploration mission to Mars, a deployable tent-shaped structure with a flexible photovoltaic (PV) blanket is proposed. The array is designed with a self-deploying mechanism utilizing pressurized gas expansion. The structural design for the array uses a combination of cables, beams, and columns to support and deploy the PV blanket. Under the force of gravity a cable carrying a uniform load will take the shape of a catenary curve. A catenary-tent collector is self shadowing which must be taken into account in the solar radiation calculation. The shape and the area of the shadow on the array was calculated and used in the determination of the global radiation on the array. The PV blanket shape and structure dimension were optimized to achieve a configuration which maximizes the specific power (W/kg). The optimization was performed for four types of PV blankets (Si, GaAs/Ge, GaAs CLEFT, and amorphous Si) and four types of structure materials (Carbon composite, Aramid Fiber composite, Aluminum, and Magnesium). The results show that the catenary shape of the PV blanket, which produces the highest specific power, corresponds to zero end angle at the base with respect to the horizontal. The tent angle is determined by the combined effect of the array structure specific mass and the PV blanket output power. The combination of carbon composite structural material and GaAs CLEFT solar cells produce the highest specific power. The study was carried out for two sites on Mars corresponding to the Viking Lander locations. The designs were also compared for summer, winter, and yearly operation.

Conceptual design study of concentrator enhanced solar arrays for space applications. 2kW Si and GaAs systems at 1 AU

NASA Technical Reports Server (NTRS)

1980-01-01

The effect of concentration level on the specific power for a deployable, thin, gallium arsenide cell array in geosynchronous orbit for 10 years in conjunction with a two dimensional flat plate trough concentrator (V trough) and also with a multiple flat plate concentrator was investigated as well as the effects for a conventional silicon cell array on a rigid substrate. For application to a thin GaAs array at 1 AU for 10 years, the V trough produces a 19% benefit in specific power and a dramatic reduction in array area, while the multiple flat plate collector design is not only of no benefit, but is a considerable detriment. The benefit it achieves by reducing array area is duplicated by the 2D design. For the silicon array on a rigid substrate, improvement in performance due to a concentrator with ordinary mirror coating is quite small: 9% increase in specific power, and 13% reduction in array area. When the concentrator mirrors are coated with an improved cold mirror coating, somewhat more significant results are obtained: 31% specific power improvement; and 27% area reduction. In both cases, a 10 year exposure reduces BOL output by 23%.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

GaAs nanopillar-array solar cells employing in situ surface passivation

PubMed Central

Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

2013-01-01

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1981-01-01

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

High-efficiency concentration/multi-solar-cell system for orbital power generation

NASA Technical Reports Server (NTRS)

Onffroy, J. R.; Stoltzmann, D. E.; Lin, R. J. H.; Knowles, G. R.

1980-01-01

An analysis was performed to determine the economic feasibility of a concentrating spectrophotovoltaic orbital electrical power generation system. In this system dichroic beam-splitting mirrors are used to divide the solar spectrum into several wavebands. Absorption of these wavebands by solar cells with matched energy bandgaps increases the cell efficiency while decreasing the amount of heat which must be rejected. The optical concentration is performed in two stages. The first concentration stage employs a Cassegrain-type telescope, resulting in a short system length. The output from this stage is directed to compound parabolic concentrators which comprise the second stage of concentration. Ideal efficiencies for one-, two-, three-, and four-cell systems were calculated under 1000 sun, AMO conditions, and optimum energy bands were determined. Realistic efficiencies were calculated for various combinations of Si, GaAs, Ge and GaP. Efficiencies of 32 to 33 percent were obtained with the multicell systems. The optimum system consists of an f/3.5 optical system, a beam splitter to divide the spectrum at 0.9 microns, and two solar cell arrays, GaAs and Si.

Patterned radial GaAs nanopillar solar cells.

PubMed

Mariani, Giacomo; Wong, Ping-Show; Katzenmeyer, Aaron M; Léonard, Francois; Shapiro, Joshua; Huffaker, Diana L

2011-06-08

Photovoltaic devices using GaAs nanopillar radial p-n junctions are demonstrated by means of catalyst-free selective-area metal-organic chemical vapor deposition. Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at ±1 V). The absence of metal catalyst contamination results in leakage currents of ∼236 nA at -1 V. High-resolution scanning photocurrent microscopy measurements reveal the independent functioning of each nanowire in the array with an individual peak photocurrent of ∼1 nA at 544 nm. External quantum efficiency shows that the photocarrier extraction highly depends on the degenerately doped transparent contact oxide. Two different top electrode schemes are adopted and characterized in terms of Hall, sheet resistance, and optical transmittance measurements.

Geometrical shape design of nanophotonic surfaces for thin film solar cells.

PubMed

Nam, W I; Yoo, Y J; Song, Y M

2016-07-11

We present the effect of geometrical parameters, particularly shape, on optical absorption enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide (GaAs) using a rigorous coupled wave analysis (RCWA) method. It is discovered that the "sweet spot" that maximizes efficiency of solar cells exists for the design of nanophotonic surfaces. For the case of ultrathin, rod array is practical due to the effective optical resonances resulted from the optimum geometry whereas parabola array is viable for relatively thicker cells owing to the effective graded index profile. A specific value of thickness, which is the median value of other two devices tailored by rod and paraboloid, is optimized by truncated shape structure. It is therefore worth scanning the optimum shape of nanostructures in a given thickness in order to achieve high performance.

Hypervelocity Impact Studies on Solar Cell Modules

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Best, Stevie R.

2001-01-01

Space environmental effects have caused severe problems as satellites move toward increased power and operating voltage levels. The greatest unknown, however, is the effect of high velocity micrometeoroid impacts on high voltage arrays (>200V). Understanding such impact phenomena is necessary for the design of future reliable, high voltage solar arrays, especially for Space Solar Power applications. Therefore, the objective of this work was to study the effect of hypervelocity impacts on high voltage solar arrays. Initially, state of the art, 18% efficient GaAs solar cell strings were targeted. The maximum bias voltage on a two-cell string was -200 V while the adjacent string was held at -140 V relative to the plasma potential. A hollow cathode device provided the plasma. Soda lime glass particles 40-120 micrometers in diameter were accelerated in the Hypervelocity Impact Facility to velocities as high as 11.6 km/sec. Coordinates and velocity were obtained for each of the approximately 40 particle impact sites on each shot. Arcing did occur, and both discharging and recharging of arcs between the two strings was observed. The recharging phenomena appeared to stop at approximately 66V string differential. No arcing was observed at 400 V on concentrator cell modules for the Stretched Lens Array.

Photovoltaic power system for a lunar base

NASA Astrophysics Data System (ADS)

Karia, Kris

An assessment is provided of the viability of using photovoltaic power technology for lunar base application during the initial phase of the mission. The initial user power demands were assumed to be 25 kW (daytime) and 12.5 kW (night time). The effect of lunar adverse environmental conditions were also considered in deriving the photovoltaic power system concept. The solar cell array was found to impose no more design constraints than those solar arrays currently being designed for spacecraft and the Space Station Freedom. The long lunar night and the need to store sufficient energy to sustain a lunar facility during this period was found to be a major design driver. A photovoltaic power system concept was derived using high efficiency thin GaAs solar cells on a deployable flexible Kapton blanket. The solar array design was sized to generate sufficient power for daytime use and for a regenerative fuel cell (RFC) energy storage system to provide power during the night. Solar array sun-tracking is also proposed to maximize the array power output capability. The system launch mass was estimated to be approximately 10 metric tons. For mission application of photovoltaic technology other issues have to be addressed including the constraints imposed by launch vehicle, safety, and cost. For the initial phase of the mission a photovoltaic power system offers a safe option.

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

1982-01-01

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

Long-term radiation effects on GaAs solar cell characteristics

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Doviak, M. J.

1978-01-01

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

Space Photovoltaic Research and Technology 1995

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1995-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Space Photovoltaic Research and Technology 1995

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1996-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% ofmore » efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.« less

Satellite Power Study (SPS) concept definition study (Exhibit D). Volume 1: Executive summary

NASA Technical Reports Server (NTRS)

Hanley, G. M.

1981-01-01

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

Nanoscale imaging of photocurrent enhancement by resonator array photovoltaic coatings.

PubMed

Ha, Dongheon; Yoon, Yohan; Zhitenev, Nikolai B

2018-04-06

Nanoscale surface patterning commonly used to increase absorption of solar cells can adversely impact the open-circuit voltage due to increased surface area and recombination. Here, we demonstrate absorptivity and photocurrent enhancement using silicon dioxide (SiO 2 ) nanosphere arrays on a gallium arsenide (GaAs) solar cell that do not require direct surface patterning. Due to the combined effects of thin-film interference and whispering gallery-like resonances within nanosphere arrays, there is more than 20% enhancement in both absorptivity and photocurrent. To determine the effect of the resonance coupling between nanospheres, we perform a scanning photocurrent microscopy based on a near-field scanning optical microscopy measurement and find a substantial local photocurrent enhancement. The nanosphere-based antireflection coating (ARC), made by the Meyer rod rolling technique, is a scalable and a room-temperature process; and, can replace the conventional thin-film-based ARCs requiring expensive high-temperature vacuum deposition.

Nanoscale imaging of photocurrent enhancement by resonator array photovoltaic coatings

NASA Astrophysics Data System (ADS)

Ha, Dongheon; Yoon, Yohan; Zhitenev, Nikolai B.

2018-04-01

Nanoscale surface patterning commonly used to increase absorption of solar cells can adversely impact the open-circuit voltage due to increased surface area and recombination. Here, we demonstrate absorptivity and photocurrent enhancement using silicon dioxide (SiO2) nanosphere arrays on a gallium arsenide (GaAs) solar cell that do not require direct surface patterning. Due to the combined effects of thin-film interference and whispering gallery-like resonances within nanosphere arrays, there is more than 20% enhancement in both absorptivity and photocurrent. To determine the effect of the resonance coupling between nanospheres, we perform a scanning photocurrent microscopy based on a near-field scanning optical microscopy measurement and find a substantial local photocurrent enhancement. The nanosphere-based antireflection coating (ARC), made by the Meyer rod rolling technique, is a scalable and a room-temperature process; and, can replace the conventional thin-film-based ARCs requiring expensive high-temperature vacuum deposition.

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

DFT algorithms for bit-serial GaAs array processor architectures

NASA Technical Reports Server (NTRS)

Mcmillan, Gary B.

1988-01-01

Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

NASA advanced space photovoltaic technology-status, potential and future mission applications

NASA Technical Reports Server (NTRS)

Flood, Dennis J.; Piszczor, Michael, Jr.; Stella, Paul M.; Bennett, Gary L.

1989-01-01

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 micrometer) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

TRMM Solar Array

NASA Technical Reports Server (NTRS)

1996-01-01

Basic requirement of 978.59 watts per Panel output @ 58.9 volts B.O.L. was met on an average basis per agreement with NASA. Lower grade Cells were used on the shadowed Panel (Boom shadow) to maximize available power to the Spacecraft. The average output @ 58.9 volts was 991 watts. The outputs of the four t4) Panels ranged from 960 to 1,022 watts. The Panels successfully passed environmental testing at TRW to the contract specification and subsequent testing at NASA which involved output measurements at elevated temperatures. As this type of Array had never previously been built by TRW (aluminum Substrate with 4 cm x 4.4 cm GaAs Cells), the TRMM Program was a development effort combined with a Qual and Flight production effort. The most significant technical problem was Cell cracking during Qual thermal cycling. The cracking problem was determined to be generic within our Solar Array factory in the application of GaAs Cells to our designs. As a result, a TRW funded manufacturing process verification panel (known as the Manufacturing Verification Panel) was built to demonstrate our ability to properly apply GaAs Cells. The original Qual Panel comprised three (3) design variations with respect to Coverglass-to-Cell and Cell-to-Substrate adhesives. The intent was to qualify multiple designs in case one or more failed. When two of the three combinations failed due to excessive Cell breakage during thermal cycling, NASA was reluctant to allow Flight production based on the one remaining good Qual Panel Quadrant. This issue was pivotal for continuing the contract. Facts and recommendations are as follows: (1) The cause of the excessive cracking was never determined. and (2) The areas where the excessive cracking occurred utilized DC93-500 glassing adhesive which was NASA approved, and had been widely used by TRW on a multitude of projects.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Proceedings of the 14Th Space Photovoltaic Research and Technology Conference (SPRAT 14)

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1995-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12)

NASA Technical Reports Server (NTRS)

1993-01-01

The Twelfth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from 20 to 22 Oct. 1992. The papers and workshops presented in this volume report substantial progress in a variety of areas in space photovoltaics. Topics covered include: high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, flexible amorphous and thin film solar cells (in the early stages of pilot production), high efficiency multiple bandgap cells, laser power converters, solar cell and array technology, heteroepitaxial cells, betavoltaic energy conversion, and space radiation effects in InP cells. Space flight data on a variety of cells were also presented.

Panel fabrication utilizing GaAs solar cells

NASA Technical Reports Server (NTRS)

Mardesich, N.

1984-01-01

The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

Third Working Meeting on Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Walker, G. H. (Compiler)

1976-01-01

Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.

High efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1977-01-01

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Analytical determination of critical crack size in solar cells

NASA Technical Reports Server (NTRS)

Chen, C. P.

1988-01-01

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

NASA Astrophysics Data System (ADS)

Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

2005-07-01

Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

Implementation and Performance of GaAs Digital Signal Processing ASICs

NASA Technical Reports Server (NTRS)

Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

1993-01-01

The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting.

PubMed

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-11-04

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power supply, a GaAs-based solar cell was used as the driving force to increase the rate of hydrogen production. The water-splitting system was tuned using different approaches to set the operating points to the maximum power point of the GaAs solar cell. The approaches included changing the electrolytes, varying the light intensity, and introducing the immersed ITO ohmic contacts on the working electrodes. As a result, the hybrid system comprising both InGaN-based working electrodes and GaAs solar cells operating under concentrated illumination could possibly facilitate efficient water splitting.

Advanced Rainbow Solar Photovoltaic Arrays

NASA Technical Reports Server (NTRS)

Mardesich, Nick; Shields, Virgil

2003-01-01

Photovoltaic arrays of the rainbow type, equipped with light-concentrator and spectral-beam-splitter optics, have been investigated in a continuing effort to develop lightweight, high-efficiency solar electric power sources. This investigation has contributed to a revival of the concept of the rainbow photovoltaic array, which originated in the 1950s but proved unrealistic at that time because the selection of solar photovoltaic cells was too limited. Advances in the art of photovoltaic cells since that time have rendered the concept more realistic, thereby prompting the present development effort. A rainbow photovoltaic array comprises side-by-side strings of series-connected photovoltaic cells. The cells in each string have the same bandgap, which differs from the bandgaps of the other strings. Hence, each string operates most efficiently in a unique wavelength band determined by its bandgap. To obtain maximum energy-conversion efficiency and to minimize the size and weight of the array for a given sunlight input aperture, the sunlight incident on the aperture is concentrated, then spectrally dispersed onto the photovoltaic array plane, whereon each string of cells is positioned to intercept the light in its wavelength band of most efficient operation. The number of cells in each string is chosen so that the output potentials of all the strings are the same; this makes it possible to connect the strings together in parallel to maximize the output current of the array. According to the original rainbow photovoltaic concept, the concentrated sunlight was to be split into multiple beams by use of an array of dichroic filters designed so that each beam would contain light in one of the desired wavelength bands. The concept has since been modified to provide for dispersion of the spectrum by use of adjacent prisms. A proposal for an advanced version calls for a unitary concentrator/ spectral-beam-splitter optic in the form of a parabolic curved Fresnel-like prism array with panels of photovoltaic cells on two sides (see figure). The surface supporting the solar cells can be adjusted in length or angle to accommodate the incident spectral pattern. An unoptimized prototype assembly containing ten adjacent prisms and three photovoltaic cells with different bandgaps (InGaP2, GaAs, and InGaAs) was constructed to demonstrate feasibility. The actual array will consist of a lightweight thin-film silicon layer of prisms curved into a parabolic shape. In an initial test under illumination of 1 sun at zero airmass, the energy-conversion efficiency of the assembly was found to be 20 percent. Further analysis of the data from this test led to a projected energy conversion efficiency as high as 41 percent for an array of 6 cells or strings (GaP, AlGaAs, InGaP2, GaAs, and two different InGaAs cells or strings).

A model for proton-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

1982-01-01

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Astrophysics Data System (ADS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

1986-01-01

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

GaAsP Top Solar Cells for Increased Solar Conversion Efficiency

DTIC Science & Technology

1989-01-01

responsible for high surface recombination in devices made from that material. Inorganic sulfide films have been used on GaAs to reduce surface recom...same time, Hamaker et al [2] demonstrated less radiation damage in 1.93 eV AlGaAs solar cells than GaAs counterparts. In very recent results on...material. Yablonovitch and coworkers [25] have used inorganic sulfide films on GaAs to reduce surface recombination rates to that of the nearly ideal AlGaAs

Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

NASA Technical Reports Server (NTRS)

Leon, Rosa P.; Piszczor, Michael F., Jr.

1985-01-01

The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

Research on gallium arsenide diffused junction solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandi, S. K.

1984-01-01

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

NASA Astrophysics Data System (ADS)

Ohori, Daisuke; Fukuyama, Atsuhiko; Sakai, Kentaro; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Ikari, Tetsuo

2017-05-01

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from as-etched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillar-based optoelectronic devices such as NP laser diodes.

Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12)

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1993-05-01

The Twelfth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from 20 to 22 Oct. 1992. The papers and workshops presented in this volume report substantial progress in a variety of areas in space photovoltaics. Topics covered include: high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, flexible amorphous and thin film solar cells (in the early stages of pilot production), high efficiency multiple bandgap cells, laser power converters, solar cell and array technology, heteroepitaxial cells, betavoltaic energy conversion, and space radiation effects in InP cells. Space flight data on amore » variety of cells were also presented. Separate abstracts have been prepared for articles from this report.« less

Advanced photovoltaic power system technology for lunar base applications

NASA Astrophysics Data System (ADS)

Brinker, David J.; Flood, Dennis J.

1992-09-01

The development of an advanced photovoltaic power system that would have application for a manned lunar base is currently planned under the Surface Power element of Pathfinder. Significant mass savings over state-of-the-art photovoltaic/battery systems are possible with the use of advanced lightweight solar arrays coupled with regenerative fuel cell storage. The solar blanket, using either ultrathin GaAs or amorphous silicon solar cells, would be integrated with a reduced-g structure. Regenerative fuel cells with high-pressure gas storage in filament-wound tanks are planned for energy storage. An advanced PV/RFC power system is a leading candidate for a manned lunar base as it offers a tremendous weight advantage over state-of-the-art photovoltaic/battery systems and is comparable in mass to other advanced power generation technologies.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Vacuum MOCVD fabrication of high efficience cells

NASA Technical Reports Server (NTRS)

Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

1985-01-01

Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Radiation testing of GaAs on CRRES and LIPS experiment

NASA Technical Reports Server (NTRS)

Trumble, T. M.; Masloski, K.

1984-01-01

The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

PubMed Central

2011-01-01

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

Periodic annealing of radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

1980-01-01

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

1984-01-01

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

Potential high efficiency solar cells: Applications from space photovoltaic research

NASA Technical Reports Server (NTRS)

Flood, D. J.

1986-01-01

NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed.

GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Use of Displacement Damage Dose in an Engineering Model of GaAs Solar Cell Radiation Damage

NASA Technical Reports Server (NTRS)

Morton, T. L.; Chock, R.; Long, K. J.; Bailey, S.; Messenger, S. R.; Walters, R. J.; Summers, G. P.

2005-01-01

Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Radiation Handbook (JPL 96-9). An alternative, the displacement damage dose (D(sub d)) method, has been developed by Summers, et al. This method is currently being implemented in the SAVANT computer program.

Investigation of high efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

1989-01-01

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

NASA Technical Reports Server (NTRS)

Desalvo, G. C.; Mueller, E. H.; Barnett, A. M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor-metal direct bonding have been fabricated. These metallic back structures could incouple the incident light into surface plasmon mode propagating at the semiconductor/metal interface to increase the optical path, as well as simply act as back reflector, and we have observed significantly increased short-circuit current relative to reference cells without these metal components. (Abstract shortened by UMI.)

Basic mechanisms study for MIS solar cell structures on GaAs

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1978-01-01

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

PubMed

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

Wire Array Photovoltaics

NASA Astrophysics Data System (ADS)

Turner-Evans, Dan

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

PubMed Central

Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

2017-01-01

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

High energy proton radiation damage to (AlGa)As-G aAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Goldhammer, L.; Kamath, S.; Knechtli, R. C.

1979-01-01

Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.

GaAs and 3-5 compound solar cells status and prospects for use in space

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.

1984-01-01

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Type II GaSb quantum ring solar cells under concentrated sunlight.

PubMed

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Langley program of GaAs solar cells. [emphasizing energy conversion efficiency and radiation resistance

NASA Technical Reports Server (NTRS)

Conway, E. J.

1979-01-01

A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Astrophysics Data System (ADS)

Guidice, Donald A.

1995-10-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Technical Reports Server (NTRS)

Guidice, Donald A.

1995-01-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Solar heating of GaAs nanowire solar cells.

PubMed

Wu, Shao-Hua; Povinelli, Michelle L

2015-11-30

We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

Solar heating of GaAs nanowire solar cells

DOE PAGES

Wu, Shao-Hua; Povinelli, Michelle L.

2015-09-25

We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. Our findings show that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.

PubMed

Plissard, S; Larrieu, G; Wallart, X; Caroff, P

2011-07-08

We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires directly on Si(111) with a near-perfect vertical yield, using electron-beam-defined arrays of holes in a dielectric layer and molecular beam epitaxy. In our conditions, GaAs nanowires are grown along a vapor-liquid-solid mechanism, using in situ self-forming Ga droplets. The focus of this paper is to understand the role of the substrate preparation and of the pre-growth conditioning. Without changing temperature or the V/III ratio, the yield of vertical nanowires is increased incrementally up to 95%. The possibility to achieve very dense arrays, with center-to-center inter-wire distances less than 100 nm, is demonstrated.

Evaluation of AlsubxGasub1-xsubAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.; Narayanan, A.; Li, S. S.

1985-01-01

Single junction GaAs solar cells have already attained an efficiency of 19% AMO which could potentially be increased to approx 20%, with some optimization. To achieve the higher efficiency the concept of multibandgap solar cells which utilizes a wider region of the solar spectrum should be sed. One of the materials for fabricating the top cell in a multibandgap solar cell is AlGaAs because it is compatible with GaAs in bandgap and lattice match. This is a very important consideration from the materials technology point of view, and the viability of this approach is evaluated.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

PubMed

Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

2017-10-02

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Vernon, S. M.

1982-01-01

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

High Concentrating GaAs Cell Operation Using Optical Waveguide Solar Energy System

NASA Technical Reports Server (NTRS)

Nakamura, T.; Case, J. A.; Timmons, M. L.

2004-01-01

This paper discusses the result of the concentrating photovoltaic (CPV) cell experiments conducted with the Optical Waveguide (OW) Solar Energy System. The high concentration GaAs cells developed by Research Triangle Institute (RTI) were combined with the OW system in a "fiber-on-cell" configuration. The sell performance was tested up to the solar concentration of 327. Detailed V-I characteristics, power density and efficiency data were collected. It was shown that the CPV cells combined with the OW solar energy system will be an effective electric power generation device.

A I-V analysis of irradiated Gallium Arsenide solar cells

NASA Technical Reports Server (NTRS)

Heulenberg, A.; Maurer, R. H.; Kinnison, J. D.

1991-01-01

A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

Radiation Damage Workshop report. [solar cells

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.

A comparison of GaAs and Si hybrid solar power systems

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Roberts, A. S., Jr.

1977-01-01

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

NASA Astrophysics Data System (ADS)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

GaAs laser diode pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Conant, L. C.; Reno, C. W.

1974-01-01

A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

28 percent efficient GaAs concentrator solar cells

NASA Technical Reports Server (NTRS)

Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

1988-01-01

AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

Solar satellites

NASA Astrophysics Data System (ADS)

Poher, C.

A reference system design, projected costs, and the functional concepts of a satellite solar power system (SSPS) for converting sunlight falling on solar panels of a satellite in GEO to a multi-GW beam which could be received by a rectenna on earth are outlined. Electricity transmission by microwaves has been demonstrated, and a reference design system for supplying 5 GW dc to earth was devised. The system will use either monocrystalline Si or concentrator GaAs solar cells for energy collection in GEO. Development is still needed to improve the lifespan of the cells. Currently, the cell performance degrades 50 percent in efficiency after 7-8 yr in space. Each SSPS satellite would weigh either 34,000 tons (Si) or 51,000 tons (GaAs), thereby requiring the fabrication of a heavy lift launch vehicle or a single-stage-to-orbit transport in order to minimize launch costs. Costs for the solar panels have been estimated at $500/kW using the GaAs technology, with transport costs for materials to GEO being $40/kg.

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.

1981-01-01

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Prediction Of Critical Crack Sizes In Solar Cells

NASA Technical Reports Server (NTRS)

Chen, Chern P.

1989-01-01

Report presents theoretical analysis of cracking in Si and GaAs solar photovoltaic cells subjected to bending or twisting. Analysis also extended to predict critical sizes for cracks in Ge substrate coated with thin film of GaAs. Analysis leads to general conclusions. Approach and results of study useful in development of guidelines for acceptance or rejection of slightly flawed cells during manufacture.

Long-term temperature effects on GaAs solar cells

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Hong, K. H.

1979-01-01

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Potential for use of InP solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Potential for use of indium phosphide solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

PubMed

Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2016-06-28

In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

A simple model of proton damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.

1982-01-01

A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Qualification test results for blue-red reflecting solar covers

NASA Technical Reports Server (NTRS)

Beauchamp, W. T.

1994-01-01

Recent market forces and design innovations have spurred the development of solar cell covers that significantly reduce the solar absorptance for a cell array. GaAs cells, using Ge as the substrate host material, can have a significantly higher output if the solar absorptance of the cell array is reduced. New optical coating design techniques have allowed the construction of covers that reflect the ultraviolet energy (below 350 nm) and the near infrared energy (above 900 nm) resulting in the beneficial reduction in absorptance. Recent modeling suggests three or more present output increase due to the lowered temperature with such a device. Within the last several months we have completed the testing of production samples of these new covers in a qualification series that included the usual environmental effects associated with the routine testing of solar cell covers and the combined effects of protons, electrons and solar UV as would be encountered in space. For the combined effects testing the samples were exposed to 300 sun days equivalent UV, 5 x 10(exp 14)/sq cm of 0.5 MeV protons and 10(exp 15)/sq cm of 1.0 MeV electrons. Measurements of the reflectance, transmission, emittance and other appropriate parameters were made before and after the testing. As measured by the averaged transmission over the cell operating band, the change in transmission for the samples was less than or about equal to 1 percent. The details of the testing and the results in terms of transmission, reflectance and emittance are discussed in the paper.

Gallium Arsenide solar cell radiation damage experiment

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

1991-01-01

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Material growth and characterization directed toward improving III-V heterojunction solar cells

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Alexander, W. E.; Collis, W.; Abul-Fadl, A.

1979-01-01

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

2017-12-01

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE PAGES

Perl, E. E.; Kuciauskas, D.; Simon, J.; ...

2017-12-21

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, E. E.; Kuciauskas, D.; Simon, J.

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Thermal stability of gallium arsenide solar cells

NASA Astrophysics Data System (ADS)

Papež, Nikola; Škvarenina, Ľubomír.; Tofel, Pavel; Sobola, Dinara

2017-12-01

This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30-650 °C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 °C thermal processing, its current-voltage characteristic remained without a significant change.

Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array.

PubMed

Zhang, Yiming; Jiang, Tao; Tang, Longhua

2017-11-15

The near-infrared (NIR) optical detection of biomolecules with high sensitivity and reliability have been expected, however, it is still a challenge. In this work, we present a gold nanorods (AuNRs)-over-gallium arsenide nanohorn-like array (GaAs NHA) system that can be used for the ultrasensitive and specific NIR photoluminescence (PL) detection of DNA and proteins. The fabrication of GaAs NHA involved the technique of colloidal lithography and inductively coupled plasma dry etching, yielding large-area and well-defined nanostructural array, and exhibiting an improved PL emission compared to the planar GaAs substrate. Importantly, we found that the DNA-bridged AuNRs attachment on NHA could further improve the PL intensity from GaAs, and thereby provide the basis for the NIR optical sensing of biological analytes. We demonstrated that DNA and thrombin could be sensitively and specifically detected, with the detection limit of 1 pM for target DNA and 10 pM for thrombin. Such ultrasensitive NIR optical platform can extend to the detection of other biomarkers and is promising for clinical diagnostics. Copyright © 2017 Elsevier B.V. All rights reserved.

Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate

NASA Astrophysics Data System (ADS)

Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

2018-02-01

The growth of undoped GaSb epilayers on GaAs (0 0 1) substrates with 2° offcut towards 〈1 1 0〉, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2 μm-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90° pure-edge dislocations along the [1 1 0] direction with a periodicity of 5.6 nm.

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1993-12-09

during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate... molecular beam epitaxy (MBE) crystal growth, the GaAs growth rate is highly sensitive to the substrate temperature above 650"C (2], a GaAs/AIGaAs... epitaxial growth technique to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavalli, Alessandro; Johnston, Steven; Sulas, Dana

Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on themore » spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.« less

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic

DOE PAGES

Kornblum, L.; Fenning, D. P.; Faucher, J.; ...

2016-12-22

We demonstrate an oxide-stabilized III–V photoelectrode architecture for solar fuel production from water in neutral pH. For this tunable architecture we demonstrate 100% Faradaic efficiency for hydrogen evolution, and incident photon-to-current efficiencies (IPCE) exceeding 50%. High IPCE for hydrogen evolution is a consequence of the low-loss interface achieved via epitaxial growth of a thin oxide on a GaAs solar cell. Developing optimal energetic alignment across the interfaces of the photoelectrode using well-established III–V technology is key to obtaining high performance. This advance constitutes a critical milestone towards efficient, unassisted fuel production from solar energy.

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

NASA Technical Reports Server (NTRS)

Russell, John; Jones, Glenn; Hall, James

2007-01-01

Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

Optical detectors for GaAs MMIC integration: Technology assessment

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.

1989-01-01

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

NASA Technical Reports Server (NTRS)

Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

1981-01-01

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Free Carrier Induced Spectral Shift for GaAs Filled Metallic Hole Arrays

DTIC Science & Technology

2012-03-13

Bahae , G. I . Stegeman, K. Al-hemyari, J. S. Aitchison, and C. N. Ironside, “Limitation due to three-photon absorption on the useful spectral range...Free carrier induced spectral shift for GaAs filled metallic hole arrays Jingyu Zhang 1,2,* , Bin Xiang 3 , Mansoor Sheik- Bahae 4 , and S. R. J...OCIS codes: (310.6628) Subwavelength structures;(190.4350) Nonlinear optics at surfaces References and links 1. J. M. Luther, P. K. I . Jain, T. Ewers

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

1982-01-01

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Gallium arsenide processing for gate array logic

NASA Technical Reports Server (NTRS)

Cole, Eric D.

1989-01-01

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Optoelectronic simulation of GaAs solar cells with angularly selective filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert

We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100 nm GaAs cell, including Auger recombination.

Gallium arsenide solar cells-status and prospects for use in space

NASA Technical Reports Server (NTRS)

Brandhorst, H. W.; Flood, D.; Weinberg, I.

1981-01-01

Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

GaAs core--shell nanowires for photovoltaic applications.

PubMed

Czaban, Josef A; Thompson, David A; LaPierre, Ray R

2009-01-01

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Paths to light trapping in thin film GaAs solar cells.

PubMed

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Galileo IOV Electrical Power Subsystem Relies On Li-Ion Batter Charge Management Controlled By Hardware

NASA Astrophysics Data System (ADS)

Douay, N.

2011-10-01

In the frame of GALILEO In-Orbit Validation program which is composed of 4 satellites, Thales Alenia Space France has designed, developed and tested the Electrical Power Subsystem. Besides some classical design choices like: -50V regulated main power bus provided by the PCDU manufactured by Terma (DK), -Solar array, manufactured by Dutch-Space (NL), using Ga-As triple junction technology from Azur Space Power Solar GmbH, -SAFT (FR) Lithium-ion Battery for which cell package balancing function is required, -Solar Array Drive Mechanism, provided by RUAG Space Switzerland, to transfer the power. This subsystem features a fully autonomous, failure tolerant, battery charge management able to operate even after a complete unavailability of the on-board software. The battery charge management is implemented such that priority is always given to satisfy the satellite main bus needs in order to maintain the main bus regulation under MEA control. This battery charge management principle provides very high reliability and operational robustness. So, the paper describes : -the battery charge management concept using a combination of PCDU hardware and relevant battery lines monitoring, -the functional aspect of the single point failure free S4R (Sequential Switching Shunt Switch Regulator) and associated performances, -the failure modes isolated and passivated by this architecture. The paper will address as well the autonomous balancing function characteristics and performances.

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Simon, John; Schulte, Kevin L.; Jain, Nikhil; ...

2016-10-19

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued improvement of the performance of HVPE-grown single-junction GaAs solar cells. We show over an order of magnitude improvement in the interface recombination velocity between GaAs and GaInP layers through the elimination of growth interrupts, leading to increased short-circuit current density and open-circuit voltage compared with cells with interrupts. One-sun conversion efficiencies as high as 20.6% were achieved with this improved growth process. Solar cells grown in an inverted configuration that were removed frommore » the substrate showed nearly identical performance to on-wafer cells, demonstrating the viability of HVPE to be used together with conventional wafer reuse techniques for further cost reduction. As a result, these devices utilized multiple heterointerfaces, showing the potential of HVPE for the growth of complex and high-quality III-V devices.« less

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C.

1980-01-01

With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

GaAs homojunction solar cell development

NASA Technical Reports Server (NTRS)

Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

1980-01-01

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

NASA Technical Reports Server (NTRS)

Vonross, O.

1980-01-01

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

NASA Technical Reports Server (NTRS)

Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

2005-01-01

In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

Approaches to solar cell design for pulsed laser power receivers

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1993-01-01

Using a laser to beam power from Earth to a photovoltaic receiver in space could be a technology with applications to many space missions. Extremely high average-power lasers would be required in a wavelength range of 700-1000 nm. However, high-power lasers inherently operate in a pulsed format. Existing solar cells are not well designed to respond to pulsed incident power. To better understand cell response to pulsed illumination at high intensity, the PC-1D finite-element computer model was used to analyze the response of solar cells to continuous and pulsed laser illumination. Over 50 percent efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modeled, and the effect of laser intensity, wavelength, and bias point was studied. Three main effects decrease the efficiency of a solar cell under pulsed laser illumination: series resistance, L-C 'ringing' with the output circuit, and current limiting due to the output inductance. The problems can be solved either by changing the pulse shape or designing a solar cell to accept the pulsed input. Cell design possibilities discussed are a high-efficiency, light-trapping silicon cell, and a monolithic, low-inductance GaAs cell.

TAB interconnects for space concentrator solar cell arrays

NASA Technical Reports Server (NTRS)

Avery, J.; Bauman, J. S.; Gallagher, P.; Yerkes, J. W.

1993-01-01

The Boeing Company has evaluated the use of Tape Automated Bonding (TAB) and Surface Mount Technology (SMT) for a highly reliable, low cost interconnect for concentrator solar cell arrays. TAB and SMT are currently used in the electronics industry for chip interconnects and printed circuit board assembly. TAB tape consists of sixty-four 3-mil/1-oz tin-plated copper leads on 8-mil centers. The leads are thermocompression gang bonded to GaAs concentrator solar cell with silver contacts. This bond, known as an Inner Lead Bond (ILB), allows for pretesting and sorting capability via nondestruct wire bond pull and flash testing. Destructive wire pull tests resulted in preferred mid-span failures. Improvements in fill factor were attributed to decreased contact resistance on TAB bonded cells. Preliminary thermal cycling and aging tests were shown excellent bond strength and metallurgical results. Auger scans of bond sites reveals an Ag-Cu-Tin composition. Improper bonds are identified through flash testing as a performance degradation. On going testing of cells are underway at Lewis Research Center. SMT techniques are utilized to excise and form TAB leads post ILB. The formed leads' shape isolates thermal mismatches between the cells and the flex circuit they are mounted on. TABed cells are picked and placed with a gantry x-y-z positioning system with pattern recognition. Adhesives are selected to avoid thermal expansion mismatch and promote thermal transfer to the flex circuit. TAB outer lead bonds are parallel gap welded (PGW) to the flex circuit to finish the concentrator solar cell subassembly.

COMPASS Final Report: Enceladus Solar Electric Propulsion Stage

NASA Technical Reports Server (NTRS)

Oleson, Steven R.; McGuire, Melissa L.

2011-01-01

The results of the NASA Glenn Research Center (GRC) COllaborative Modeling and Parametric Assessment of Space Systems (COMPASS) internal Solar Electric Propulsion (SEP) stage design are documented in this report (Figure 1.1). The SEP Stage was designed to deliver a science probe to Saturn (the probe design was performed separately by the NASA Goddard Space Flight Center s (GSFC) Integrated Mission Design Center (IMDC)). The SEP Stage delivers the 2444 kg probe on a Saturn trajectory with a hyperbolic arrival velocity of 5.4 km/s. The design carried 30 percent mass, 10 percent power, and 6 percent propellant margins. The SEP Stage relies on the probe for substantial guidance, navigation and control (GN&C), command and data handling (C&DH), and Communications functions. The stage is configured to carry the probe and to minimize the packaging interference between the probe and the stage. The propulsion system consisted of a 1+1 (one active, one spare) configuration of gimbaled 7 kW NASA Evolutionary Xenon Thruster (NEXT) ion propulsion thrusters with a throughput of 309 kg Xe propellant. Two 9350 W GaAs triple junction (at 1 Astronomical Unit (AU), includes 10 percent margin) ultra-flex solar arrays provided power to the stage, with Li-ion batteries for launch and contingency operations power. The base structure was an Al-Li hexagonal skin-stringer frame built to withstand launch loads. A passive thermal control system consisted of heat pipes to north and south radiator panels, multilayer insulation (MLI) and heaters for the Xe tank. All systems except tanks and solar arrays were designed to be single fault tolerant.

Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Weiquan; Becker, Jacob; Liu, Shi

2014-05-28

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Launch vehicle and power level impacts on electric GEO insertion

NASA Technical Reports Server (NTRS)

Oleson, Steven R.; Myers, Roger M.

1996-01-01

Solar Electric Propulsion (SEP) has been shown to increase net geosynchronous spacecraft mass when used for station keeping and final orbit insertion. The impact of launch vehicle selection and power level on the benefits of this approach were examined for 20 and 25 kW systems launched using the Ariane 5, Atlas IIAR, Long March, Proton, and Sea Launch vehicles. Two advanced on-board propulsion technologies, 5 kW ion and Hall thruster systems, were used to establish the relative merits of the technologies and launch vehicles. GaAs solar arrays were assumed. The analysis identifies the optimal starting orbits for the SEP orbit raising/plane changing while considering the impacts of radiation degradation in the Van Allen belts, shading, power degradation, and oblateness. This use of SEP to provide part of the orbit insertion results in net mass increases of 15 - 38% and 18 - 46% for one to two month trip times, respectively, over just using SEP for 15 years of north/south station keeping. SEP technology was shown to have a greater impact on net masses of launch vehicles with higher launch latitudes when avoidance of solar array and payload degradation is desired. This greater impact of SEP could help reduce the plane changing disadvantage of high latitude launch sites. Comparison with results for 10 and 15 kW systems show clear benefits of incremental increases in SEP power level, suggesting that an evolutionary approach to high power SEP for geosynchronous spacecraft is possible.

Accelerated GaAs growth through MOVPE for low-cost PV applications

NASA Astrophysics Data System (ADS)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

Optimization of solar cells for air mass zero operation and study of solar cells at high temperatures, phase 4

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1980-01-01

The Pd contact to GaAs was studied using backscattering, Auger analysis, and sheet resistance measurements. Several metallurgical phases were present at low temperatures, but PdGa was the dominant phase in samples annealed at 500 C. Ti/Pd/Ag contacts appeared to have the lowest contact resistance. Etchback epitaxy (EBE) was compared to saturated melt epitaxy (SME) method of growing liquid phase epitaxial layers. The SME method resulted in a lower density of Ga microdroplets in the grown layer, although the best solar cells were made by the EBE method. Photoluminescence was developed as a tool for contactless analysis of GaAs cells. Efficiencies of over 8 percent were measured at 250 C.

Diode pumped Nd:YAG laser development

NASA Technical Reports Server (NTRS)

Reno, C. W.; Herzog, D. G.

1976-01-01

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performance

NASA Technical Reports Server (NTRS)

Bhat, I.; Bhat, K. N.; Mathur, G.; Borrego, J. M.; Ghandhi, S. K.

1984-01-01

This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.

Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Ford, C. W.; Werthen, J. G.

1984-01-01

Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behaghel, B.; Institute of Research and Development on Photovoltaic Energy; NextPV, RCAST and CNRS, The University of Tokyo, Meguro-ku, Tokyo 153-8904

We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Janousek, B. K.; Francis, R. W.; Wendt, J. P.

1985-01-01

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Optical designs for improved solar cell performance

NASA Astrophysics Data System (ADS)

Kosten, Emily Dell

The solar resource is the most abundant renewable resource on earth, yet it is currently exploited with relatively low efficiencies. To make solar energy more affordable, we can either reduce the cost of the cell or increase the efficiency with a similar cost cell. In this thesis, we consider several different optical approaches to achieve these goals. First, we consider a ray optical model for light trapping in silicon microwires. With this approach, much less material can be used, allowing for a cost savings. We next focus on reducing the escape of radiatively emitted and scattered light from the solar cell. With this angle restriction approach, light can only enter and escape the cell near normal incidence, allowing for thinner cells and higher efficiencies. In Auger-limited GaAs, we find that efficiencies greater than 38% may be achievable, a significant improvement over the current world record. To experimentally validate these results, we use a Bragg stack to restrict the angles of emitted light. Our measurements show an increase in voltage and a decrease in dark current, as less radiatively emitted light escapes. While the results in GaAs are interesting as a proof of concept, GaAs solar cells are not currently made on the production scale for terrestrial photovoltaic applications. We therefore explore the application of angle restriction to silicon solar cells. While our calculations show that Auger-limited cells give efficiency increases of up to 3% absolute, we also find that current amorphous silicion-crystalline silicon heterojunction with intrinsic thin layer (HIT) cells give significant efficiency gains with angle restriction of up to 1% absolute. Thus, angle restriction has the potential for unprecedented one sun efficiencies in GaAs, but also may be applicable to current silicon solar cell technology. Finally, we consider spectrum splitting, where optics direct light in different wavelength bands to solar cells with band gaps tuned to those wavelengths. This approach has the potential for very high efficiencies, and excellent annual power production. Using a light-trapping filtered concentrator approach, we design filter elements and find an optimal design. Thus, this thesis explores silicon microwires, angle restriction, and spectral splitting as different optical approaches for improving the cost and efficiency of solar cells.

Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

A high-speed GaAs MESFET optical controller

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

1989-01-01

Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

Sn nanothreads in GaAs: experiment and simulation

NASA Astrophysics Data System (ADS)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1982-01-01

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

DOE PAGES

Kang, Dongseok; Young, James L.; Lim, Haneol; ...

2017-03-27

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here in this paper we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfacesmore » for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.« less

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Young, James L.; Lim, Haneol; Klein, Walter E.; Chen, Huandong; Xi, Yuzhou; Gai, Boju; Deutsch, Todd G.; Yoon, Jongseung

2017-03-01

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfaces for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.

Multijunction Solar Cell Development and Production at Spectrolab

NASA Technical Reports Server (NTRS)

Fetzer, Chris; King, R. R.; Law, D. C.; Edmondson, K. M.; Isshiki, T.; Haddad, M.; Zhang, X.; Boisvert, J. C.; Joslin, D. E.; Karam, N. H.

2007-01-01

Development of multijunction space solar cells is much like that for any high technology product. New products face two major pressures from the market: improving performance while maintaining heritage. This duality of purpose is not new and has been represented since ancient times by the Roman god Janus.[1] This deity was typically represented as two faces on a single head: one facing forward and the other to the rear. The image of Janus has been used as symbolism for many combined forces of dual purpose, such as the balance in life between beginnings and endings, or between art and science. For our purposes, Janus represents our design philosophy balance between looking to the future for improvement while simultaneously blending past heritage. In the space photovoltaics industry there are good reasons for both purposes. Looking to the past, a product must have a space flight heritage to gain widespread use. The main reason being that this is an unforgiving business. Spacecraft are expensive to build, launch and operate. Typically once a satellite is launched, in-field service for a power systems problem is near impossible.[2Balanced with this is looking forward. New missions typically require more power than previous programs or attempt new objectives such as a new orbit. And there is always the cost pressure for both the satellite itself as well as the launch costs. Both of which push solar technology to improve power density at a lower cost. The consequence of this balance in a high-risk environment is that space PV develops as a series of infrequent large technology steps or generational changes interspersed with more frequent small technology steps or evolutionary changes. Figure 1 gives a bit of clarification on this point. It depicts the historical progress in space solar cells tracked by efficiency against first launch date for most major products introduced by Spectrolab. The first generation is the Si-based technology reaching a peak values near 15% AM0 (herein denoted for max. power, AM0, 1.353 W/cm2, 28 C). The GaAs single junction device generation supplanted this technology with first flight of GaAs on GaAs substrate in 1982.[3] More recently this generation has been supplanted by the multijunction solar cell GaInP/GaAs/Ge generation. The first launch of a commercial satellite powered by multijunction technology was in 1997 (Hughes HS 601HP) using solar arrays based on Spectrolab s dual junction (DJ) cells. The cells at that time were an impressive 21.5% efficient at beginning-of-life (BOL).[4] Eight years later, the multijunction device has evolved through several versions. The incorporation of an active Ge subcell formed the Triple Junction (TJ) product line at 25.1% efficient, on orbit since November 2001. The evolution of the TJ into the Improved Triple Junction (ITJ) at 26.8% efficient has been on orbit since June of 2002.[5

Concepts for thin-film GaAs concentrator cells. [for solar photovoltaic space power systems

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Gale, R. P.; Mcclelland, R.; King, B.; Dingle, J.

1989-01-01

The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

Author Correction: III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-06-01

In the version of this Article originally published, in the legend in Fig. 5a, the blue, green and red lines were incorrectly labelled as GaAs, Si and GaInP, respectively; instead, the labels should have read, respectively, GaInP, GaAs and Si. This has now been corrected.

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

NASA Technical Reports Server (NTRS)

Wilt, David M.; Clark, Eric B.; Ringel, Steven A.; Andre, Carrie L.; Smith, Mark A.; Scheiman, David A.; Jenkins, Phillip P.; Maurer, William F.; Fitzgerald, Eugene A.; Walters, R. J.

2004-01-01

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum well have been found to be critical in producing quality multi-quantum well structures. The effect of the GaAs interfacial layers has been investigated. It was determined that a phosphorus carry-over had a profound effect on the absorption edge of the InGaAs wells. It was shown that the phosphorus carry-over can be prevented with sufficiently thick GaAs transition layers. Preliminary results for GaAs p-in solar cells utilizing the improved MQWs are presented. In addition to investigating the utilization of quantum wells in the i-region of a GaAs p-i-n diode to improve the efficiency of multijunction solar cells, an investigation into the effect a single GaAs:Te doped quantum well has on the performance of high bandgap InxGa1- xP:Te/Al0.6Ga 0.4As:C tunnel junctions was investigated. The insertion of 30A of GaAs:Te at the junction interface resulted in a peak current of 1000A/cm2 and a voltage drop of ~3mV for 30A/cm2 (2000x concentration). The presence of this GaAs interfacial layer also improved the uniformity across the wafer. This architecture could be used within multijunction solar cells to extend the range of usable solar concentration with minimal voltage drop.

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

NASA Astrophysics Data System (ADS)

Gobet, Mathilde; Bae, Hopil P.; Sarmiento, Tomas; Harris, James S.

2008-02-01

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

NASDA activities in space solar power system research, development and applications

NASA Technical Reports Server (NTRS)

Matsuda, Sumio; Yamamoto, Yasunari; Uesugi, Masato

1993-01-01

NASDA activities in solar cell research, development, and applications are described. First, current technologies for space solar cells such as Si, GaAs, and InP are reviewed. Second, future space solar cell technologies intended to be used on satellites of 21st century are discussed. Next, the flight data of solar cell monitor on ETS-V is shown. Finally, establishing the universal space solar cell calibration system is proposed.

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

50 kWp Photovoltaic Concentrator Application Experiment, Phase I. Final report, 1 June 1978-28 February 1979

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maget, H.J.R.

1979-06-15

This program consists of a design study and component development for an experimental 50-kWp photovoltaic concentrator system to supply power to the San Ramon substation of the Pacific Gas and Electric Company. The photovoltaic system is optimized to produce peaking power to relieve the air conditioning load on the PG and E system during summer afternoons; and would therefore displace oil-fired power generation capacity. No electrical storage is required. The experiment would use GaAs concentrator cells with point-focus fresnel lenses operating at 400X, in independent tracking arrays of 440 cells each, generating 3.8 kWp. Fourteen arrays, each 9 feet bymore » 33 feet, are connected electrically in series to generate the 50 kWp. The high conversion efficiency possible with GaAs concentrator cells results in a projected annual average system efficiency (AC electric power output to sunlight input) of better than 15%. The capability of GaAs cells for high temperature operation made possible the design of a total energy option, whereby thermal power from selected arrays could be used to heat and cool the control center for the installation. System design and analysis, fabrication and installation, environmental assessment, and cost projections are described in detail. (WHK)« less

Light-Emitting GaAs Nanowires on a Flexible Substrate.

PubMed

Valente, João; Godde, Tillmann; Zhang, Yunyan; Mowbray, David J; Liu, Huiyun

2018-06-18

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.

Fabrication of Integral Solar Cell Covers by the Plasma Activated Source.

DTIC Science & Technology

1981-01-01

1 Average Intrinsic Deposition Stress of Pyrolitic Silicon Oxynitride Films vs. Composition ................................... 7 2 Coefficient of...source for activated oxygen molecules which were reacted with, for example, silane at a solar cell surface to deposit amorphous silicon dioxide on the... Silicon Solar Cells ........ 51 44.6 SiO 2 Coatings in GaAs Solar Cells ........... 58 5.0 CONCLUSIONS..................................... 61 5.1

Heterojunction solar cell

DOEpatents

Olson, Jerry M.

1994-01-01

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

PubMed Central

2014-01-01

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

Millimeter-wave monolithic diode-grid frequency multiplier

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

GaAs/Ge solar panels for the SAMPEX program

NASA Technical Reports Server (NTRS)

Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

1992-01-01

GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

PubMed

Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

2011-02-09

We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Cadmium telluride solar cells: Record-breaking voltages

DOE PAGES

Poplawsky, Jonathan D.

2016-01-01

Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

DTIC Science & Technology

2016-03-31

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs Kassem Nabha1, Russel Ricker2, Rodney McGee1, Nick Waite1, John Prineas2, Sydney Provence2...infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In...circuit (RIIC) chips using flip-chip bonding. This established technology is called Hybrid-super-lattice light emitting diodes (Hybrid- SLEDS). In

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Properties of solar generators with reflectors and radiators

NASA Astrophysics Data System (ADS)

Ebeling, W. D.; Rex, D.; Bierfischer, U.

1980-06-01

Radiation cooled concentrator systems using silicon and GaAs cells were studied. The principle of radiation cooling by the reflector surfaces is discussed for cylindrical parabolic reflectors (SARA), truncated hexagonal pyramids, and a small trough configuration. Beam paths, collection properties for imperfect orientation, and thermal optimization parameters were analyzed. The three concentrating systems with radiation cooling offer advantages over the plane panel and over the large trough. With silicon solar cells they exhibit considerably lower solar cell consumption per Kw and also lower mass per kW. With GaAs cells the SARA system reduces the number of solar cells needed per kW to less than 10%. Also in all other cases SARA offers the best values for alpha and F sub sol, as long as narrow angular tolerances of the panel orientation can be met. Analysis of the energy collecting properties for imperfect orientation shows the superiority of the hexagonal concentrator. This device can produce power for even large angles between the sun and the panel normal.

Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

PubMed Central

Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

2015-01-01

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Heterojunction solar cell

DOEpatents

Olson, J.M.

1994-08-30

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Wide-Band Monolithic Acoustoelectric Memory Correlators.

DTIC Science & Technology

1982-11-01

piezoelectric and non- earlier analysis of thin- oxide varactors . The new analysis ex- conducting. Tapped structures which satisfy this criterion are plains...for tapped LiNbO3/metal- oxide - important realization. The logical consequence is that only silicon [26] structures is, in fact, not applicable here. It...Clarke, "The GaAs SAW depletion layer of’ the diode array. A more complex structure, diode storage correlalor," in 1980 Ultrasonics Synp. Proc., pp a GaAs

Multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution as a mechanism to generate intermediate band energy levels

NASA Astrophysics Data System (ADS)

Rodríguez-Magdaleno, K. A.; Pérez-Álvarez, R.; Martínez-Orozco, J. C.; Pernas-Salomón, R.

2017-04-01

In this work the generation of an intermediate band of energy levels from multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution is reported. Within the effective mass approximation the electronic structure of a GaAs spherical quantum-dot surrounded by one, two and three shells is studied in detail using a numerically stable transfer matrix method. We found that a shells-size distribution characterized by continuously wider GaAs domains is a suitable mechanism to generate the intermediate band whose width is also dependent on the Aluminium concentration x. Our results suggest that this effective mechanism can be used for the design of wider intermediate band than reported in other quantum systems with possible solar cells enhanced performance.

Buffer layer between a planar optical concentrator and a solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solano, Manuel E.; Barber, Greg D.; Department of Chemistry, Pennsylvania State University, University Park, PA 16802

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structuremore » increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.« less

Electron and proton degradation in /AlGa/As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Knechtli, R. C.; Kamath, G. S.; Goldhammer, L.; Anspaugh, B.

1978-01-01

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-01-01

This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice mismatch. Both the sample growth and the in situ thermal annealing were carried out in the in the molecular beam epitaxy system, and the temperature of the as-grown sample was increased to exceed its growth temperature during the annealing. X-ray diffraction demonstrates nearly fully relaxed as-grown and annealed III-Sb layers. The optimal annealing temperatures and durations are for 590 °C, 5 min for GaSb and 420 °C, 15 min for InSb, respectively. In situ annealing decreased the surface roughness of the III-Sb layers. X-ray reciprocal space mapping and transmission electron microscopy observation showed stable interfacial misfit arrays, and no interfacial diffusion occurred in the annealed III-Sb layers. A Hall measurement of unintentionally doped III-Sb layers showed greater carrier mobility and a lower carrier concentration in the annealed samples at both 77 and 300 K. In situ annealing improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs in the near- and mid-infrared ranges, respectively.

Gallium Arsenide welded panel technology for advanced spaceflight applications

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Gillanders, M. S.; Garlick, G. F. J.; Cavicchi, B. T.; Glenn, G. S.; Tobin, S. P.

1989-01-01

A significant impediment to the widespread use of GaAs solar cells in space is the cost and weight of the GaAs substrate. In order to overcome these problems, Spectrolab is pursuing thin cell technologies encompassing both liquid phase epitaxy (LPE) GaAs on GaAs and MOCVD GaAs on Ge cells. Spectrolab's experience in the manufacture of 4 to 6 mil 2 cm x 4 cm GaAs cells on a LPE production line is discussed. By thinning the cells at a late state of processing, production yields comparable to 12 mil cells have been achieved. Data are presented showing that GaAs cells can be welded without degradation and have achieved minimum average efficiencies of 18 percent AM0, 28 C with efficiencies up to 20 percent. Spectrolab, in conjunction with Spire Corporation has also been pursuing GaAs on Ge cell technology in support of larger area lighter weight power systems. Data are presented showing that individual 2 cm x 2 cm, 8 mil cell efficiencies up to 21.7 percent have been achieved. Efficiencies up to 24 percent AM0 will be possible by optimizing the GaAs/Ge interface. Cells have been welded without degradation using silver interconnects and have been laid down on an aluminum honeycomb/graphite facesheet substrate to produce a small coupon. The efficiency was 18.1 percent at AM0, 28 C.

The NASA Lewis Research Center program in space solar cell research and technology. [efficient silicon solar cell development program

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.

1979-01-01

Progress in space solar cell research and technology is reported. An 18 percent-AMO-efficient silicon solar cell, reduction in the radiation damage suffered by silicon solar cells in space, and high efficiency wrap-around contact and thin (50 micrometer) coplanar back contact silicon cells are among the topics discussed. Reduction in the cost of silicon cells for space use, cost effective GaAs solar cells, the feasibility of 30 percent AMO solar energy conversion, and reliable encapsulants for space blankets are also considered.

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Goradia, Chandra; Thesling, William; Weinberg, Irving

1991-01-01

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

The NASA Space Solar Cell Advanced Research Program

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1989-01-01

Two major requirements for space solar cells are high efficiency and survivability in the naturally occurring charged particle space radiation environment. Performance limits for silicon space cells are well understood. Advanced cells using GaAs and InP are under development to provide significantly improved capability for the future.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poplawsky, Jonathan D.

Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

Estimated performance and future potential of solar dynamic and photovoltaic power systems for selected LEO and HEO missions

NASA Technical Reports Server (NTRS)

Bents, David J.; Lu, Cheng Y.

1989-01-01

Solar Photo Voltaic (PV) and thermal dynamic power systems for application to selected Low Earth Orbit (LEO) and High Eccentric Orbit (Energy) (HEO) missions are characterized in the regime 7 to 35 kWe. Input parameters to the characterization are varied corresponding to anticipated introduction of improved or new technologies. Comparative assessment is made between the two power system types utilizing newly emerging technologies in cells and arrays, energy storage, optical surfaces, heat engines, thermal energy storage, and thermal management. The assessment is made to common ground rules and assumptions. The four missions (space station, sun-synchronous, Van Allen belt and GEO) are representative of the anticipated range of multi-kWe earth orbit missions. System characterizations include all required subsystems, including power conditioning, cabling, structure, to deliver electrical power to the user. Performance is estimated on the basis of three different levels of component technology: (1) state-of-art, (2) near-term, and (3) advanced technologies. These range from planar array silicon/IPV nickel hydrogen batteries and Brayton systems at 1000 K to thin film GaAs with high energy density secondary batteries or regenerative fuel cells and 1300 K Stirling systems with ultra-lightweight concentrators and radiators. The system estimates include design margin for performance degradations from the known environmental mechanisms (micrometeoroids and space debris, atomic oxygen, electron and proton flux) which are modeled and applied depending on the mission. The results give expected performance, mass and drag of multi-kWe earth orbiting solar power systems and show how overall system figures of merit will improve as new component technologies are incorporated.

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Design of quantum efficiency measurement system for variable doping GaAs photocathode

NASA Astrophysics Data System (ADS)

Chen, Liang; Yang, Kai; Liu, HongLin; Chang, Benkang

2008-03-01

To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. Through early research, we proved that variable doping structure is executable and practical, and has great potential. In order to optimize variable doping GaAs photocathode preparation techniques and study the variable doping theory deeply, a real-time quantum efficiency measurement system for GaAs Photocathode has been designed. The system uses FPGA (Field-programmable gate array) device, and high speed A/D converter to design a high signal noise ratio and high speed data acquisition card. ARM (Advanced RISC Machines) core processor s3c2410 and real-time embedded system are used to obtain and show measurement results. The measurement precision of photocurrent could reach 1nA, and measurement range of spectral response curve is within 400~1000nm. GaAs photocathode preparation process can be real-time monitored by using this system. This system could easily be added other functions to show the physic variation of photocathode during the preparation process more roundly in the future.

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Selective Area Growth of GaAs on Si Patterned Using Nanoimprint Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Makoutz, Emily A.; Horowitz, Kelsey A. W.

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. For photovoltaic applications, the cost of patterning and growth, as well as the impact on the performance of the Si bottom cell must be considered. We present preliminary results on the use of soft nanoimprint lithography (SNIL) to create patternedmore » nucleation templates for the heteroepitaxial SAG of GaAs on Si. We demonstrate that SNIL patterning of passivating layers on the Si substrate improves measured minority carrier properties relative to unprotected Si. Cost modeling of the SNIL process shows that adding a patterning step only adds a minor contribution to the overall cost of a tandem III-V/Si solar cell, and can enable significant savings if it enables thinner buffer layers.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Two-step photon up-conversion solar cells

PubMed Central

Asahi, Shigeo; Teranishi, Haruyuki; Kusaki, Kazuki; Kaizu, Toshiyuki; Kita, Takashi

2017-01-01

Reducing the transmission loss for below-gap photons is a straightforward way to break the limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below-gap photons is very promising for generating additional photocurrent. Here we propose a two-step photon up-conversion SC with a hetero-interface comprising different bandgaps of Al0.3Ga0.7As and GaAs. The below-gap photons for Al0.3Ga0.7As excite GaAs and generate electrons at the hetero-interface. The accumulated electrons at the hetero-interface are pumped upwards into the Al0.3Ga0.7As barrier by below-gap photons for GaAs. Efficient two-step photon up-conversion is achieved by introducing InAs quantum dots at the hetero-interface. We observe not only a dramatic increase in the additional photocurrent, which exceeds the reported values by approximately two orders of magnitude, but also an increase in the photovoltage. These results suggest that the two-step photon up-conversion SC has a high potential for implementation in the next-generation high-efficiency SCs. PMID:28382945

The 25 percent-efficient GaAs Cassegrainian concentrator cell

NASA Technical Reports Server (NTRS)

Hamaker, H. C.; Grounner, M.; Kaminar, N. R.; Kuryla, M. S.; Ladle, M. J.; Liu, D. D.; Macmillan, H. F.; Partain, L. D.; Virshup, G. F.; Werthen, J. G.

1989-01-01

Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration.

Design and implementation of GaAs HBT circuits with ACME

NASA Technical Reports Server (NTRS)

Hutchings, Brad L.; Carter, Tony M.

1993-01-01

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

High-power, ultralow-mass solar arrays: FY-77 solar arrays technology readiness assessment report, volume 2

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Young, L. E.; Brandhorst, H. W., Jr.

1978-01-01

Development efforts are reported in detail for: (1) a lightweight solar array system for solar electric propulsion; (2) a high efficiency thin silicon solar cell; (3) conceptual design of 200 W/kg solar arrays; (4) fluorocarbon encapsulation for silicon solar cell array; and (5) technology assessment of concentrator solar arrays.

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Internal stress-assisted epitaxial lift-off process for flexible thin film (In)GaAs solar cells on metal foil

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Jung, Sang Hyun; Kim, Chang Zoo; Shin, Hyun-Beom; Choi, JeHyuk; Kang, Ho Kwan

2017-12-01

Flexible thin film (In)GaAs solar cells are grown by metalorganic chemical vapor deposition on GaAs substrates and transferred to 30 μm thick Au foil by internal stress-assisted epitaxial lift-off processes. The internal stress is induced by replacing the solar cell epi-layers from GaAs to In0.015Ga0.985As, which has a slightly larger lattice constant. The compressive strained layer thickness was varied from 0 to 4.5 μm to investigate the influence of the internal stress on the epitaxial lift-off time. The etching time in the epitaxial lift-off process was reduced from 36 to 4 h by employing a GaAs/In0.015Ga0.985As heterojunction structure that has a compressive film stress of -59.0 MPa. We found that the partially strained epi-structure contributed to the much faster lateral etching rate with spontaneous bending. Although an efficiency degradation problem occurred in the strained solar cell, it was solved by optimizing the epitaxial growth conditions.

Single laser beam of spatial coherence from an array of GaAs lasers - Free-running mode

NASA Technical Reports Server (NTRS)

Philipp-Rutz, E. M.

1975-01-01

Spatially coherent radiation from a monolithic array of three GaAs lasers in a free-running mode is reported. The lasers, with their mirror faces antireflection coated, are operated in an external optical cavity built of spherical lenses and plane mirrors. The spatially coherent-beam formation makes use of the Fourier-transformation property of the internal lenses. Transverse mode control is accomplished by a spatial filter. The optical cavity is similar to that used for the phase-controlled mode of spatially coherent-beam formation; only the spatial filters are different. In the far field (when restored by an external lens), the intensities of the lasers in the array are concentrated in a single laser beam of spatial coherence, without any grating lobes. The far-field distribution of the laser array in the free-running mode differs significantly from the interference pattern of the phase-controlled mode. The modulation characteristics of the optical waveforms of the two modes are also quite different because modulation is related to the interaction of the spatial filter with the longitudinal modes of the laser array within the optical cavity. The modulation of the optical waveform of the free-running mode is nonperiodic, confirming that the fluctuations of the optical fields of the lasers are random.

Development of a 4-15 μm infrared GaAs hyperspectral QWIP imager

NASA Astrophysics Data System (ADS)

Jhabvala, M.; Gunapala, S.; Reuter, D.; Choi, K. K.; Bandara, S.; Liu, J.; La, A.; Banks, S.; Cho, J.; Hwang, T.; Tsay, S.; Rafol, D.; Huet, H.; Chauvet, N.; Huss, T.

2003-10-01

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4-15.4 μm wavelength region. This effort was a collaboration between NASA's Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5-5.7 μm, Band 2; 8.5-10 μm, Band 3; 10-12 μm and Band 4; 13.3-14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four "broad" bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.

On-Orbit Reconfigurable Solar Array

NASA Technical Reports Server (NTRS)

Levy, Robert K. (Inventor)

2017-01-01

In one or more embodiments, the present disclosure teaches a method for reconfiguring a solar array. The method involves providing, for the solar array, at least one string of solar cells. The method further involves deactivating at least a portion of at least one of the strings of solar cells of the solar array when power produced by the solar array reaches a maximum power allowance threshold. In addition, the method involves activating at least a portion of at least one of the strings of the solar cells in the solar array when the power produced by the solar array reaches a minimum power allowance threshold.

Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices

NASA Astrophysics Data System (ADS)

Bao, Xingzhen; Liang, Jingqiu; Liang, Zhongzhu; Wang, Weibiao; Tian, Chao; Qin, Yuxin; Lü, Jinguang

2016-04-01

An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1994-01-01

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, J.M.; Kurtz, S.R.

1994-05-31

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Technology of GaAs metal-oxide-semiconductor solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1977-01-01

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Homojunction GaAs solar cells grown by close space vapor transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.

2014-06-08

We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping,more » and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.« less

Testing of gallium arsenide solar cells on the CRRES vehicle

NASA Technical Reports Server (NTRS)

Trumble, T. M.

1985-01-01

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

2016-11-15

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

The efficiency of photovoltaic cells exposed to pulsed laser light

NASA Technical Reports Server (NTRS)

Lowe, R. A.; Landis, G. A.; Jenkins, P.

1993-01-01

Future space missions may use laser power beaming systems with a free electron laser (FEL) to transmit light to a photovoltaic array receiver. To investigate the efficiency of solar cells with pulsed laser light, several types of GaAs, Si, CuInSe2, and GaSb cells were tested with the simulated pulse format of the induction and radio frequency (RF) FEL. The induction pulse format was simulated with an 800-watt average power copper vapor laser and the RF format with a frequency-doubled mode-locked Nd:YAG laser. Averaged current vs bias voltage measurements for each cell were taken at various optical power levels and the efficiency measured at the maximum power point. Experimental results show that the conversion efficiency for the cells tested is highly dependent on cell minority carrier lifetime, the width and frequency of the pulses, load impedance, and the average incident power. Three main effects were found to decrease the efficiency of solar cells exposed to simulated FEL illumination: cell series resistance, LC 'ringing', and output inductance. Improvements in efficiency were achieved by modifying the frequency response of the cell to match the spectral energy content of the laser pulse with external passive components.

Solar array technology evaluation program for SEPS (Solar Electrical Propulsion Stage)

NASA Technical Reports Server (NTRS)

1974-01-01

An evaluation of the technology and the development of a preliminary design for a 25 kilowatt solar array system for solar electric propulsion are discussed. The solar array has a power to weight ratio of 65 watts per kilogram. The solar array system is composed of two wings. Each wing consists of a solar array blanket, a blanket launch storage container, an extension/retraction mast assembly, a blanket tensioning system, an array electrical harness, and hardware for supporting the system for launch and in the operating position. The technology evaluation was performed to assess the applicable solar array state-of-the-art and to define supporting research necessary to achieve technology readiness for meeting the solar electric propulsion system solar array design requirements.

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

NASA Technical Reports Server (NTRS)

Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

1990-01-01

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

Electro-optical characterization of GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Daling, Dave

1987-01-01

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Current and lattice matched tandem solar cell

DOEpatents

Olson, Jerry M.

1987-01-01

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

International ultraviolet explorer solar array power degradation

NASA Technical Reports Server (NTRS)

Day, J. H., Jr.

1983-01-01

The characteristic electrical performance of each International Ultraviolet Explorer (IUE) solar array panel is evaluated as a function of several prevailing variables (namely, solar illumination, array temperature and solar cell radiation damage). Based on degradation in the current-voltage characteristics of the array due to solar cell damage accumulated over time by space charged particle radiations, the available IUE solar array power is determined for life goals up to 10 years. Best and worst case calculations are normalized to actual IUE flight data (available solar array power versus observatory position) to accurately predict the future IUE solar array output. It is shown that the IUE solar array can continue to produce more power than is required at most observatory positions for at least 5 more years.

Burst annealing of high temperature GaAs solar cells

NASA Technical Reports Server (NTRS)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Vernon, S. M.; Wolfson, R. G.; Tobin, S. P.

1984-01-01

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Evaluation of solar cells and arrays for potential solar power satellite applications

NASA Technical Reports Server (NTRS)

Almgren, D. W.; Csigi, K.; Gaudet, A. D.

1978-01-01

Proposed solar array designs and manufacturing methods are evaluated to identify options which show the greatest promise of leading up to the develpment of a cost-effective SPS solar cell array design. The key program elements which have to be accomplished as part of an SPS solar cell array development program are defined. The issues focussed on are: (1) definition of one or more designs of a candidate SPS solar array module, using results from current system studies; (2) development of the necessary manufacturing requirements for the candidate SPS solar cell arrays and an assessment of the market size, timing, and industry infrastructure needed to produce the arrays for the SPS program; (3) evaluation of current DOE, NASA and DOD photovoltaic programs to determine the impacts of recent advances in solar cell materials, array designs and manufacturing technology on the candidate SPS solar cell arrays; and (4) definition of key program elements for the development of the most promising solar cell arrays for the SPS program.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Development of a 2K x 2K GaAs QWIP Focal Plane Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Jhabvala, C.; Kelly, D.; Hess, L.; Ewin, A.; La, A.; Wacynski, A.; Sun, J.; Adachi, T.;

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

NASA Astrophysics Data System (ADS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-08-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Multi-kW solar arrays for Earth orbit applications

NASA Technical Reports Server (NTRS)

1985-01-01

The multi-kW solar array program is concerned with developing the technology required to enable the design of solar arrays required to power the missions of the 1990's. The present effort required the design of a modular solar array panel consisting of superstrate modules interconnected to provide the structural support for the solar cells. The effort was divided into two tasks: (1) superstrate solar array panel design, and (2) superstrate solar array panel-to-panel design. The primary objective was to systematically investigate critical areas of the transparent superstrate solar array and evaluate the flight capabilities of this low cost approach.

New infrared detectors and solar cells

NASA Technical Reports Server (NTRS)

Sher, A.

1979-01-01

The inventions and published papers related to the project are listed. The research with thin films of LaF3 deposited on GaAs substrates is reported along with improvements in photocapacitative MIS infrared detectors.

The effects of electron and proton radiation on GaSb infrared solar cells

NASA Technical Reports Server (NTRS)

Gruenbaum, P. E.; Avery, J. E.; Fraas, L. M.

1991-01-01

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

Two color QWIP and extended wavebands

NASA Astrophysics Data System (ADS)

Costard, Eric; Truffer, Jean P.; Huet, Odile; Dua, Lydie; Nedelcu, Alexandru; Robo, J. A.; Marcadet, Xavier; Briere de l'Isle, Nadia; Bois, Philippe; Manissadjian, A.; Gohier, D.

2007-04-01

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at THALES Research and Technology Laboratory. The QWIP technology allows the realization of large staring arrays for Thermal Imagers (TI) working in the long-wave infrared (LWIR) band (8-12 μm). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. The 640x512 LWIR focal plane arrays (FPAs) with 20μm pitch was the demonstration that state of the art performances can be achieved even with small pixels. This opened the field for the realization of usable and affordable megapixel FPAs. Thales Research & Technology (TRT) has been developing third generation GaAs LWIR QWIP arrays for volume manufacture of high performance low cost thermal imaging cameras. In the past, another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multispectral detection. In this presentation, we present the performances of both our first 384x288, 25 μm pitch, MWIR (3-5μm) / LWIR (8-9 μm) dual-band FPAs, and the current status of QWIPs for MWIR (< 5μm) and VLWIR (>15μm) arrays.

Cryogenic reactant storage for lunar base regenerative fuel cells

NASA Technical Reports Server (NTRS)

Kohout, Lisa L.

1989-01-01

There are major advantages to be gained by integrating a cryogenic reactant storage system with a hydrogen-oxygen regenerative fuel cell (RFC) to provide on-site electrical power during the lunar night. Although applicable to any power system using hydrogen-oxygen RFC's for energy storage, cryogenic reactant storage offers a significant benefit whenever the sun/shade cycle and energy storage period approach hundreds of hours. For solar power installations on the moon, cryogenic reactant storage reduces overall specific mass and meteoroid vulnerability of the system. In addition, it offers synergistic benefits to on-site users, such as availability of primary fuel cell reactants for surface rover vehicles and cryogenic propellants for OTV's. The integration involves processing and storing the RFC reactant streams as cryogenic liquids rather than pressurized gases, so that reactant containment (tankage per unit mass of reactants) can be greatly reduced. Hydrogen-oxygen alkaline RFC's, GaAs photovoltaic (PV) arrays, and space cryogenic processing/refrigeration technologies are assumed to be available for the conceptual system design. Advantages are demonstrated by comparing the characteristics of two power system concepts: a conventional lunar surface PV/RFC power system using pressurized gas storage in SOA filament wound pressure vessels and, that same system with gas liquefaction and storage replacing the pressurized storage. Comparisons are made at 20 and 250 kWe. Although cryogenic storage adds a processing plant (drying and liquefaction) to the system plus 30 percent more solar array to provide processing power, the approximate order of magnitude reduction in tankage mass, confirmed by this analysis, results in a reduction in overall total system mass of approximately 50 percent.

AlGaAs-GaAs cascade solar cell

NASA Technical Reports Server (NTRS)

Lamorte, M. F.; Abbott, D. H.

1980-01-01

Computer modeling studies are reported for a monolithic, two junction, cascade solar cell using the AlGaAs GaAs materials combination. An optimum design was obtained through a serial optimization procedure by which conversion efficiency is maximized for operation at 300 K, AM 0, and unity solar concentration. Under these conditions the upper limit on efficiency was shown to be in excess of 29 percent, provided surface recombination velocity did not exceed 10,000 cm/sec.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Quantum Well Infrared Photodetectors (QWIP)

NASA Technical Reports Server (NTRS)

Levine, B. F.

1990-01-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Quantum Well Infrared Photodetectors (QWIP)

NASA Astrophysics Data System (ADS)

Levine, B. F.

1990-07-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

New Voltage and Current Thresholds Determined for Sustained Space Plasma Arcing

NASA Technical Reports Server (NTRS)

Ferguson, Dale C.; Galofaro, Joel T.; Vayner, Boris V.

2003-01-01

It has been known for many years, based partly on NASA Glenn Research Center testing, that high-voltage solar arrays arc into the space plasma environment. Solar arrays are composed of solar cells in series with each other (a string), and the strings may be connected in parallel to produce the entire solar array power. Arcs on solar arrays can damage or destroy solar cells, and in the extreme case of sustained arcing, entire solar array strings, in a flash. In the case of sustained arcing (discovered at Glenn and applied to the design and construction of solar arrays on Space Systems/Loral (SS/Loral, Palo Alto, CA) satellites, Deep-Space 1, and Terra), an arc on one solar array string can couple to an adjacent string and continue to be powered by the solar array output until a permanent electrical short is produced. In other words, sustained arcs produced by arcs into the plasma (so-called trigger arcs) may turn into disastrous sustained arcs by involving other array strings.

Isoelectronic co-doping

DOEpatents

Mascarenhas, Angelo

2004-11-09

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Current-matched high-efficiency, multijunction monolithic solar cells

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1993-01-01

The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0

Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

DTIC Science & Technology

2015-04-09

out during 2013. A set of growth experiments to deposit CdTe and ZnTe thin films on GaAs and Si substrates was carried out to test the system...After several dummy runs, a few growth runs to deposit CdTe and ZnTe, both doped and undoped, were grown on 3-inch diameter Si substrates or part of...to deposit CdTe and ZnTe on Si and GaAs substrates for use in this project. Some layers have been processed to make solar cells. Project 3

(abstract) Scaling Nominal Solar Cell Impedances for Array Design

NASA Technical Reports Server (NTRS)

Mueller, Robert L; Wallace, Matthew T.; Iles, Peter

1994-01-01

This paper discusses a task the objective of which is to characterize solar cell array AC impedance and develop scaling rules for impedance characterization of large arrays by testing single solar cells and small arrays. This effort is aimed at formulating a methodology for estimating the AC impedance of the Mars Pathfinder (MPF) cruise and lander solar arrays based upon testing single cells and small solar cell arrays and to create a basis for design of a single shunt limiter for MPF power control of flight solar arrays having very different inpedances.

Solar cell array design handbook - The principles and technology of photovoltaic energy conversion

NASA Technical Reports Server (NTRS)

Rauschenbach, H. S.

1980-01-01

Photovoltaic solar cell array design and technology for ground-based and space applications are discussed from the user's point of view. Solar array systems are described, with attention given to array concepts, historical development, applications and performance, and the analysis of array characteristics, circuits, components, performance and reliability is examined. Aspects of solar cell array design considered include the design process, photovoltaic system and detailed array design, and the design of array thermal, radiation shielding and electromagnetic components. Attention is then given to the characteristics and design of the separate components of solar arrays, including the solar cells, optical elements and mechanical elements, and the fabrication, testing, environmental conditions and effects and material properties of arrays and their components are discussed.

Current- and lattice-matched tandem solar cell

DOEpatents

Olson, J.M.

1985-10-21

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

Ka-band MMIC arrays for ACTS Aero Terminal Experiment

NASA Technical Reports Server (NTRS)

Raquet, C.; Zakrajsek, R.; Lee, R.; Turtle, J.

1992-01-01

An antenna system consisting of three experimental Ka-band active arrays using GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification is presented. The MMIC arrays are to be demonstrated in the ACTS Aeronautical Terminal Experiment, planned for early 1994. The experiment is outlined, with emphasis on a description of the antenna system. Attention is given to the way in which proof-of-concept MMIC arrays featuring three different state-of-the-art approaches to Ka-band MMIC insertion are being incorporated into an experimental aircraft terminal for the demonstration of an aircraft-to-satellite link, providing a basis for follow-on MMIC array development.

High voltage photovoltaic power converter

DOEpatents

Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

2001-01-01

An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

Nano-cones for broadband light coupling to high index substrates

NASA Astrophysics Data System (ADS)

Buencuerpo, J.; Torné, L.; Álvaro, R.; Llorens, J. M.; Dotor, M. L.; Ripalda, J. M.

2016-12-01

The moth-eye structure has been proposed several times as an antireflective coating to replace the standard optical thin films. Here, we experimentally demonstrate the feasibility of a dielectric moth-eye structure as an antireflective coating for high-index substrates, like GaAs. The fabricated photonic crystal has Si3N4 cones in a square lattice, sitting on top of a TiO2 index matching layer. This structure attains 1.4% of reflectance power losses in the operation spectral range of GaAs solar cells (440-870 nm), a 12.5% relative reduction of reflection power losses in comparison with a standard bilayer. The work presented here considers a fabrication process based on laser interference lithography and dry etching, which are compatible with solar cell devices. The experimental results are consistent with scattering matrix simulations of the fabricated structures. In a broader spectral range (400-1800 nm), the simulation estimates that the nanostructure also significantly outperforms the standard bilayer coating (3.1% vs. 4.5% reflection losses), a result of interest for multijunction tandem solar cells.

Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance.

PubMed

Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min

2016-01-28

A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability. For large gate count circuits the power per gate must be minimized to prevent reliability and cooling problems. The technical factors which favor increasing GaAs circuit complexity are primarily related to reducing the speed and power penalties incurred when crossing chip boundaries. Because the internal GaAs chip logic levels are not compatible with standard silicon I/O levels input receivers and output drivers are needed to convert levels. These I/O circuits add significant delay to logic paths consume large amounts of power and use an appreciable portion of the die area. The effects of these I/O penalties can be reduced by increasing the ratio of core logic to I/O on a chip. DSP operations which have a large number of logic stages between the input and the output are ideal candidates to take advantage of the performance of GaAs digital circuits. Figure 2 is a schematic representation of the I/O penalties encountered when converting from ECL levels to GaAs

Space solar cell technology development - A perspective

NASA Technical Reports Server (NTRS)

Scott-Monck, J.

1982-01-01

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

A simple model of space radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stith, J. J.; Stock, L. V.

1983-01-01

A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Operational considerations to reduce solar array loads

NASA Technical Reports Server (NTRS)

Gerstenmaier, W.

1992-01-01

The key parameters associated with solar array plume loads are examined, and operational considerations aimed at minimizing the effect of the Shuttle plumes on the Space Station solar arrays are discussed. These include solar array pointing to reduce loads and restrictions on Shuttle piloting. Particular attention is given to the method used to obtain the forcing functions (thruster time firing histories) for solar array plume calculation.

Quasi-Ballistic Carbon Nanotube Array Transistors with Current Density Exceeding Si and GaAs

DTIC Science & Technology

2016-09-02

performance of surfactant- encapsulated and conjugated polymer –wrapped CNTs in aligned arrays prepared by dielectrophoresis (20) and shear-casting (21); how... conjugated polymer poly[(9,9-dioctylfluorenyl- 2,7-diyl)-alt-co-(6,60-(2,20-bipyridine))] (PFO-BPy) in toluene to se- lectively wrap the semiconducting...Malenfant, J. Humes, J. Kroeger, A hybrid enrichment process combining conjugated polymer extraction and silica gel adsorption for high purity

Gate-Sensing the Potential Landscape of a GaAs Two-Dimensional Electron Gas

NASA Astrophysics Data System (ADS)

Croot, Xanthe; Mahoney, Alice; Pauka, Sebastian; Colless, James; Reilly, David; Watson, John; Fallahi, Saeed; Gardner, Geoff; Manfra, Michael; Lu, Hong; Gossard, Arthur

In situ dispersive gate sensors hold potential as a means of enabling the scalable readout of quantum dot arrays. Sensitive to quantum capacitance, dispersive sensors have been used to detect inter- and intra-dot transitions in GaAs double quantum dots, and can distinguish the spin states of singlet triplet qubits. In addition, the gate-sensing technique is likely of value in probing the physics of Majorana zero modes in nanowire devices. Beyond the readout signatures associated with charge and spin configurations of qubits, gate-sensing is sensitive to trapped charge in the potential landscape. Here, we report gate-sensing signals arising from tunnelling of electrons between puddles of trapped charge in a GaAs 2DEG. We examine these signals in a family of different devices with varying mobilities, and as a function of temperature and bias. Implications for qubit readout using the gate-sensing technique are discussed.

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1984-01-01

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Optimization of wave-guided luminescence for higher efficiency of bifacial thin-film microscale GaAs solar cells

NASA Astrophysics Data System (ADS)

Shen, Ling; Shen, Yifeng; Li, Feng

2018-01-01

In pursuit of capturing more wave-guided luminescence for surface-printed bifacial GaAs μ-cells, the pyramid structure has been incorporated with specular back side reflector (BSR) to change the direction of photon propagation. Based on ray tracing model, the calculated photon capturing efficiency of GaAs μ-cells from back side via pyramid, dependent on the parameters of pyramid structure, achieve the largest 1.7× increase for dye absorption peak of 480 nm compared to the case without pyramid. More significantly, the short circuit current in experiment has been improved from original 16.5 mA/cm2 to 23.75 mA/cm2 for the AM 1.5G solar spectrum. Further experiment demonstrates that the optimized pyramid structure enables the integrated luminescent intensity to reach ∼3× increase in a smaller distance of optical transport, which means the advantages in photon capturing efficiency for cells with higher aspect ratio. The calculation further confirms that the cells with higher aspect ratio, among all cells with the same area, realize the higher concentration ratio for the same geometric gain. This provides a guideline for design of cell geometries to guarantee a higher power output in terms of cell modules.

Reliability Improvement in III-V Concentrator Solar Cells by Means of Perimeter Protection

NASA Astrophysics Data System (ADS)

González, José R.; Vázquez, Manuel; Núñez, Neftalí; Algora, Carlos; Espinet, Pilar

2010-10-01

This paper presents the evolution in the strategy to assess the reliability of III-V solar cells and a new thermal ageing test carried out over GaAs single junction solar cells at three different temperatures (130, 150 and 170° C). The perimeter of the solar cells has been protected with silicone, which seems to be an effective way of enhancing the reliability of the solar cells. A preliminary analysis of the results indicates a mean time to failure (MTTF) one order of magnitude larger than the one obtained in a previous thermal test with the perimeter uncoated.

Torsional Buckling Tests of a Simulated Solar Array

NASA Technical Reports Server (NTRS)

Thornton, E. A.

1996-01-01

Spacecraft solar arrays are typically large structures supported by long, thin deployable booms. As such, they may be particularly susceptible to abnormal structural behavior induced by mechanical and thermal loading. One example is the Hubble Space Telescope solar arrays which consist of two split tubes fit one inside the other called BiSTEMs. The original solar arrays on the Hubble Space Telescope were found to be severely twisted following deployment and later telemetry data showed the arrays were vibrating during daylight to night and night to daylight transition. The solar array twist however can force the BiSTEM booms to change in cross-section and cause tile solar arrays to react unpredictably to future loading. The solar arrays were redesigned to correct for tile vibration, however, upon redeployment they again twisted. To assess the influence of boom cross-sectional configuration, experiments were conducted on two types of booms, (1)booms with closed cross-sections, and (2) booms with open cross-sections. Both models were subjected to compressive loading and imposed tip deflections. An existing analytical model by Chung and Thornton was used to define the individual load ranges for each model solar array configuration. The load range for the model solar array using closed cross-section booms was 0-120 Newtons and 0-160 Newtons for the model solar array using open cross-section booms. The results indicate the model solar array with closed cross-section booms buckled only in flexure. However, the results of the experiment with open cross-section booms indicate the model solar array buckled only in torsion and with imposed tip deflections the cross section can degrade by rotation of the inner relative to the outer STEM. For tile Hubble Space Telescope solar arrays the results of these experiments indicate the twisting resulted from the initial mechanical loading of the open cross-section booms.

Advanced photovoltaic solar array design assessment

NASA Technical Reports Server (NTRS)

Stella, Paul; Scott-Monck, John

1987-01-01

The Advanced Photovoltaic Solar Array (APSA) program seeks to bring to flight readiness a solar array that effectively doubles the specific power of the Solar Array Flight Experiment/Solar Electric Propulsion (SAFE/SEP) design that was successfully demonstrated during the Shuttle 41-D mission. APSA is a critical intermediate milestone in the effort to demonstrate solar array technologies capable of 300 W/kg and 300 W/square m at beginning of life (BOL). It is not unreasonable to anticipate the development of solar array designs capable of 300 W/kg at BOL for operational power levels approx. greater than 25 kW sub e. It is also quite reasonable to expect that high performance solar arrays capable of providing at least 200 W/kg at end of life for most orbits now being considered by mission planners will be realized in the next decade.

Modeling and reconfiguration of solar photovoltaic arrays under non-uniform shadow conditions

NASA Astrophysics Data System (ADS)

Nguyen, Dung Duc

Mass production and use of electricity generated from solar energy has become very common recently because of the environmental threats arising from the production of electricity from fossil fuels and nuclear power. The obvious benefits of solar energy are clean energy production and infinite supply of daylight. The main disadvantage is the high cost. In these photovoltaic systems, semiconductor materials convert the solar light into electrical energy. Current versus voltage characteristics of the solar cells are nonlinear, thus leading to technical control challenges. In the first order approximation, output power of a solar array is proportional to the irradiance of sunlight. However, in many applications, such as solar power plants, building integrated photovoltaic or solar tents, the solar photovoltaic arrays might be illuminated non-uniformly. The cause of non-uniform illumination may be the shadow of clouds, the trees, booms, neighbor's houses, or the shadow of one solar array on the other, etc. This further leads to nonlinearities in characteristics. Because of the nature of the electrical characteristics of solar cells, the maximum power losses are not proportional to the shadow, but magnify nonlinearly [1]. Further, shadows of solar PV array can cause other undesired effects: (1) The power actually generated from the solar PV array is much less than designed. At some systems, the annual losses because of the shadow effects can be reached 10%. Thus, the probability for "loss of load" increases [2]. (2) The local hot spot in the shaded part of the solar PV array can damage the solar cells. The shaded solar cells may be work on the negative voltage region and become a resistive load and absorb power. Bypass diodes are sometimes connected parallel to solar cells to protect them from damage. However, in most cases, just one diode is connected in parallel to group of solar cells [3], and this hidden the potential power output of the array. This proposed research will focus on the development of an adaptable solar array that is able to optimize power output, reconfigure itself when solar cells are damaged and create controllable output voltages and currents. This study will be a technological advancement over the existing technology of solar PV. Presently solar arrays are fixed arrays that require external device to control their output. In this research, the solar array will be able to self-reconfigure, leading to the following advantages: (1) Higher efficiency because no external devices are used. (2) Can reach maximum possible output power that is much higher than the maximum power of fixed solar arrays by arranging the solar cells in optimized connections. (3) Elimination of the hot spot effects. The proposed research has the following goals: First, to create a modeling and computing algorithm, which is able to simulate and analyze the effects of non-uniform changing shadows on the output power of solar PV arrays. Our model will be able to determine the power losses in each solar cell and the collective hot spots of an array. Second, to propose new methods, which are able to predict the performance of solar PV arrays under shadow conditions for long term (days, months, years). Finally, to develop adaptive reconfiguration algorithms to reconfigure connections within solar PV arrays in real time, under shadow conditions, in order to optimize output power.

Back reflectors based on buried Al{sub 2}O{sub 3} for enhancement of photon recycling in monolithic, on-substrate III-V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

García, I.; Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid; Kearns-McCoy, C. F.

Photon management has been shown to be a fruitful way to boost the open circuit voltage and efficiency of high quality solar cells. Metal or low-index dielectric-based back reflectors can be used to confine the reemitted photons and enhance photon recycling. Gaining access to the back of the solar cell for placing these reflectors implies having to remove the substrate, with the associated added complexity to the solar cell manufacturing. In this work, we analyze the effectiveness of a single-layer reflector placed at the back of on-substrate solar cells, and assess the photon recycling improvement as a function of themore » refractive index of this layer. Al{sub 2}O{sub 3}-based reflectors, created by lateral oxidation of an AlAs layer, are identified as a feasible choice for on-substrate solar cells, which can produce a V{sub oc} increase of around 65% of the maximum increase attainable with an ideal reflector. The experimental results obtained using prototype GaAs cell structures show a greater than two-fold increase in the external radiative efficiency and a V{sub oc} increase of ∼2% (∼18 mV), consistent with theoretical calculations. For GaAs cells with higher internal luminescence, this V{sub oc} boost is calculated to be up to 4% relative (36 mV), which directly translates into at least 4% higher relative efficiency.« less

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

PubMed

Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2012-09-12

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Solar array study for solar electric propulsion spacecraft for the Encke rendezvous mission

NASA Technical Reports Server (NTRS)

Sequeira, E. A.; Patterson, R. E.

1974-01-01

The work is described which was performed on the design, analysis and performance of a 20 kW rollup solar array capable of meeting the design requirements of a solar electric spacecraft for the 1980 Encke rendezvous mission. To meet the high power requirements of the proposed electric propulsion mission, solar arrays on the order of 186.6 sq m were defined. Because of the large weights involved with arrays of this size, consideration of array configurations is limited to lightweight, large area concepts with maximum power-to-weight ratios. Items covered include solar array requirements and constraints, array concept selection and rationale, structural and electrical design considerations, and reliability considerations.

Multilayer Dielectric Transmissive Optical Phase Modulator

NASA Technical Reports Server (NTRS)

Keys, Andrew Scott; Fork, Richard Lynn

2004-01-01

A multilayer dielectric device has been fabricated as a prototype of a low-loss, low-distortion, transmissive optical phase modulator that would provide as much as a full cycle of phase change for all frequency components of a transmitted optical pulse over a frequency band as wide as 6.3 THz. Arrays of devices like this one could be an alternative to the arrays of mechanically actuated phase-control optics (adaptive optics) that have heretofore been used to correct for wave-front distortions in highly precise optical systems. Potential applications for these high-speed wave-front-control arrays of devices include agile beam steering, optical communications, optical metrology, optical tracking and targeting, directional optical ranging, and interferometric astronomy. The device concept is based on the same principle as that of band-pass interference filters made of multiple dielectric layers with fractional-wavelength thicknesses, except that here there is an additional focus on obtaining the desired spectral phase profile in addition to the device s spectral transmission profile. The device includes a GaAs substrate, on which there is deposited a stack of GaAs layers alternating with AlAs layers, amounting to a total of 91 layers. The design thicknesses of the layers range from 10 nm to greater than 1 micrometer. The number of layers and the thickness of each layer were chosen in a computational optimization process in which the wavelength dependences of the indices of refraction of GaAs and AlAs were taken into account as the design was iterated to maximize the transmission and minimize the group-velocity dispersion for a wavelength band wide enough to include all significant spectral components of the pulsed optical signal to be phase modulated.

Seven-panel solar wing deployment and on-orbit maneuvering analyses

NASA Astrophysics Data System (ADS)

Hwang, Earl

2005-05-01

BSS developed a new generation high power (~20kW) solar array to meet the customer demands. The high power solar array had the north and south solar wings of which designs were identical. Each side of the solar wing consists of three main conventional solar panels and the four-side panel swing-out new design. The fully deployed solar array surface area is 966 ft2. It was a quite challenging task to define the solar array's optimum design parameters and deployment scheme for such a huge solar array's successful deployment and on-orbit maneuvering. Hence, a deployable seven-flex-panel solar wing nonlinear math model and a fully deployed solar array/bus-payload math model were developed with the Dynamic Analysis and Design System (DADS) program codes utilizing the inherited and empirical data. Performing extensive parametric analyses with the math model, the optimum design parameters and the orbit maneuvering /deployment schemes were determined to meet all the design requirements, and for the successful solar wing deployment on-orbit.

Low-cost silicon solar array project environmental hail model for assessing risk to solar collectors

NASA Technical Reports Server (NTRS)

Gonzalez, C.

1977-01-01

The probability of solar arrays being struck by hailstones of various sizes as a function of geographic location and service life was assessed. The study complements parallel studies of solar array sensitivity to hail damage, the final objective being an estimate of the most cost effective level for solar array hail protection.

Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays.

PubMed

Tex, David M; Nakamura, Tetsuya; Imaizumi, Mitsuru; Ohshima, Takeshi; Kanemitsu, Yoshihiko

2017-05-16

Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of tandem solar cells. Here, the radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage (I-V) measurements and time-resolved photoluminescence (PL). The conversion efficiencies of the entire device before and after damage are measured with I-V curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data the change in the carrier dynamics in the subcells can be discussed. Our optical method allows to predict the absolute electrical conversion efficiency of the device with an accuracy of better than 5%. While both InGaP and GaAs subcells suffered from significant material degradation, the performance loss of the total device can be completely ascribed to the damage in the GaAs subcell. This points out the importance of high internal electric fields at the operating point.

Quantum well infrared photodetectors (QWIP) with selectively regrown N-GaAs plugs

NASA Astrophysics Data System (ADS)

Matsukura, Yusuke; Nishino, Hironori; Tanaka, Hitoshi; Fujii, Toshio

2001-10-01

We fabricated the GaAs/AlGaAs Quantum Well Infrared Photo detector (QWIP) focal plane array with selectively re-grown N- GaAs interconnection plugs and demonstrated its device operation, in order to establish the technology to obtain both complex device functions and device manufacturability. MBE (Molecular Beam Epitaxy) grown QWIP MQW wafers were covered with SiON and SiNx mask films to obtain selectivity of the re-growth process. N-GaAs plugs were re-grown selectively with low-pressure MOCVD (Metal-Organic Chemical Vapor Deposition) with AsH3 and Dimethylgalliumchloride as precursors, only on the bottom surfaces of the holes for the interconnection to extract the electrodes from the underlying epilayer. Cross- sectional SEM observation revealed that the feature of the re- grown N-GaAs plugs was triangular, rather than rectangular as expected. The reason for this discrepancy is not yet clear. The electrical contact between the epilayer and re-grown N- GaAs plug was 'ohmic-like,' without any trace of interfacial barrier. The Current-Voltage characteristics of the fabricated QWIP device showed no tangible leakage current between the N- GaAs plug and device structure, indicating that electrical insulation between the N-GaAs plugs and device structure was sufficient. Fabricated devices were successfully operated as a hybrid focal plane array, indicating the selective re-growth was a promising technique to realize complex QWIP based devices.

Thermal/Dynamic Characterization Test of the Solar Array Panel for Hubble Space Telescope

NASA Technical Reports Server (NTRS)

Jenkins, Kathleen; Hershfeld, Donald J.

1999-01-01

The Hubble Space Telescope has experienced a problem maintaining pointing accuracy during emergence of the spacecraft from the Earth's shadow. The problem has been attributed to the rapid thermal gradient that develops when the heat from the Sun strikes the cold solar arrays. The thermal gradient causes the solar arrays to deflect or bend and this motion is sufficient to disturb the pointing control system. In order to alleviate this problem, a new design for the solar arrays has been fabricated. These new solar arrays will replace the current solar arrays during a future Hubble servicing mission. The new solar arrays have been designed so that the effective net motion of the center of mass of each panel is essentially zero. Although the solar array thermal deflection problem has been studied extensively over a period of years, a full scale test of the actual flight panels was required in order to establish confidence in the analyses. This test was conducted in the JPL Solar Simulation Facility in April, 1999. This presentation will discuss the objectives and methods of the test and present some typical test data.

Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

NASA Technical Reports Server (NTRS)

Kunath, R. R.; Bhasin, K. B.

1986-01-01

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

DTIC Science & Technology

1987-09-01

laser diode arrays are intended to be used as an optical pump for solid state yttrium aluminum garnet (YAG) lasers. In particular, linear uniform...corresponds to about . , 8080A. Such thin layer structures, while difficult to grow by such conventional growth methods as liquid phase epitaxy ( LPE ...lower yet than for DH lasers grown by LPE . , - Conventional self-aligned stripe laser This structure is formed by growing (on an n-type GaAs substrate

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

NASA Astrophysics Data System (ADS)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1983-12-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

NASA Technical Reports Server (NTRS)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1983-01-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.

Catalyst-free, III-V nanowire photovoltaics

NASA Astrophysics Data System (ADS)

Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

2014-05-01

We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

Developing an Inflatable Solar Array

NASA Technical Reports Server (NTRS)

Malone, Patrick K.; Jankowski, Francis J.; Williams, Geoffery T.; Vendura, George J., Jr.

1992-01-01

Viewgraphs describing the development of an inflatable solar array as part of the Inflatable Torus Solar Array Technology (ITSAT) program are presented. Program phases, overall and subsystem designs, and array deployment are addressed.

Goddard Space Flight Center solar array missions, requirements and directions

NASA Technical Reports Server (NTRS)

Gaddy, Edward; Day, John

1994-01-01

The Goddard Space Flight Center (GSFC) develops and operates a wide variety of spacecraft for conducting NASA's communications, space science, and earth science missions. Some are 'in house' spacecraft for which the GSFC builds the spacecraft and performs all solar array design, analysis, integration, and test. Others are 'out of house' spacecraft for which an aerospace contractor builds the spacecraft and develops the solar array under direction from GSFC. The experience of developing flight solar arrays for numerous GSFC 'in house' and 'out of house' spacecraft has resulted in an understanding of solar array requirements for many different applications. This presentation will review those solar array requirements that are common to most GSFC spacecraft. Solar array technologies will be discussed that are currently under development and that could be useful to future GSFC spacecraft.

Laser-Ablated Ba(0.50)Sr(0.50)TiO3/LaAlO3 Films Analyzed Statistically for Microwave Applications

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

2003-01-01

Scanning phased-array antennas represent a highly desirable solution for futuristic near-Earth and deep space communication scenarios requiring vibration-free, rapid beam steering and enhanced reliability. The current state-of-practice in scanning phased arrays is represented by gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology or ferrite phase shifters. Cost and weight are significant impediments to space applications. Moreover, conventional manifold-fed arrays suffer from beam-forming loss that places considerable burden on MMIC amplifiers. The inefficiency can result in severe thermal management problems.

SMEX-Lite Modular Solar Array Architecture

NASA Technical Reports Server (NTRS)

Lyons, John W.; Day, John (Technical Monitor)

2002-01-01

The NASA Small Explorer (SMEX) missions have typically had three years between mission definition and launch. This short schedule has posed significant challenges with respect to solar array design and procurement. Typically, the solar panel geometry is frozen prior to going out with a procurement. However, with the SMEX schedule, it has been virtually impossible to freeze the geometry in time to avoid scheduling problems with integrating the solar panels to the spacecraft. A modular solar array architecture was developed to alleviate this problem. This approach involves procuring sufficient modules for multiple missions and assembling the modules onto a solar array framework that is unique to each mission. The modular approach removes the solar array from the critical path of the SMEX integration and testing schedule. It also reduces the cost per unit area of the solar arrays and facilitates the inclusion of experiments involving new solar cell or panel technologies in the SMEX missions.

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Oxygen Durability Testing of an International Space Station Solar Array Validation Coupon

NASA Technical Reports Server (NTRS)

Forkapa, Mark J.; Stidham, Curtis; Banks, Bruce A.; Rutledge, Sharon K.; Ma, David H.; Sechkar, Edward A.

1996-01-01

An International Space Station solar array validation coupon was exposed in a directed atomic oxygen beam for space environment durability testing at the NASA Lewis Research Center. Exposure to atomic oxygen and intermittent tensioning of the solar array were conducted to verify the solar array#s durability to low Earth orbital atomic oxygen and to the docking threat of plume loading both of which are anticipated over its expected mission life of fifteen years. The validation coupon was mounted on a specially designed rotisserie. The rotisserie mounting enabled the solar and anti-solar facing side of the array to be exposed to directed atomic oxygen in a sweeping arrival process replicating space exposure. The rotisserie mounting also enabled tensioning, in order to examine the durability of the array and its hinge to simulated plume loads. Flash testing to verify electrical performance of the solar array was performed with a solar simulator before and after the exposure to atomic oxygen and tensile loading. Results of the flash testing indicated little or no degradation in the solar array#s performance. Photographs were also taken of the array before and after the durability testing and are included along with comparisons and discussions in this report. The amount of atomic oxygen damage appeared minor with the exception of a very few isolated defects. There were also no indications that the simulated plume loadings had weakened or damaged the array, even though there was some erosion of Kapton due to atomic oxygen attack. Based on the results of this testing, it is apparent that the International Space Station#s solar arrays should survive the low Earth orbital atomic oxygen environment and docking threats which are anticipated over its expected mission life.

The Implementation of Advanced Solar Array Technology in Future NASA Missions

NASA Technical Reports Server (NTRS)

Piszczor, Michael F.; Kerslake, Thomas W.; Hoffman, David J.; White, Steve; Douglas, Mark; Spence, Brian; Jones, P. Alan

2003-01-01

Advanced solar array technology is expected to be critical in achieving the mission goals on many future NASA space flight programs. Current PV cell development programs offer significant potential and performance improvements. However, in order to achieve the performance improvements promised by these devices, new solar array structures must be designed and developed to accommodate these new PV cell technologies. This paper will address the use of advanced solar array technology in future NASA space missions and specifically look at how newer solar cell technologies impact solar array designs and overall power system performance.

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

The New NASA-STD-4005 and NASA-HDBK-4006, Essentials for Direct-Drive Solar Electric Propulsion

NASA Technical Reports Server (NTRS)

Ferguson, Dale C.

2007-01-01

High voltage solar arrays are necessary for direct-drive solar electric propulsion, which has many advantages, including simplicity and high efficiency. Even when direct-drive is not used, the use of high voltage solar arrays leads to power transmission and conversion efficiencies in electric propulsion Power Management and Distribution. Nevertheless, high voltage solar arrays may lead to temporary power disruptions, through the so-called primary electrostatic discharges, and may permanently damage arrays, through the so-called permanent sustained discharges between array strings. Design guidance is needed to prevent these solar array discharges, and to prevent high power drains through coupling between the electric propulsion devices and the high voltage solar arrays. While most electric propulsion systems may operate outside of Low Earth Orbit, the plasmas produced by their thrusters may interact with the high voltage solar arrays in many ways similarly to Low Earth Orbit plasmas. A brief description of previous experiences with high voltage electric propulsion systems will be given in this paper. There are two new official NASA documents available free through the NASA Standards website to help in designing and testing high voltage solar arrays for electric propulsion. They are NASA-STD-4005, the Low Earth Orbit Spacecraft Charging Design Standard, and NASA-HDBK-4006, the Low Earth Orbit Spacecraft Charging Design Handbook. Taken together, they can both educate the high voltage array designer in the engineering and science of spacecraft charging in the presence of dense plasmas and provide techniques for designing and testing high voltage solar arrays to prevent electrical discharges and power drains.

KSC-00pp1212

NASA Image and Video Library

2000-08-30

Workers rise to the occasion on accordion lifts as they oversee the movement of solar array in front of them. The solar array will be installed onto the Integrated Equipment Assembly (IEA). A component of the International Space Station, the solar array is the second one being installed on the IEA. The arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1213

NASA Image and Video Library

2000-08-30

An overhead crane in the Space Station Processing Facility lifts a solar array as workers stand by to help guide it. The solar array will be installed onto the Integrated Equipment Assembly (IEA). A component of the International Space Station, the solar array is the second one being installed on the IEA. The arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

PubMed Central

Brady, Gerald J.; Way, Austin J.; Safron, Nathaniel S.; Evensen, Harold T.; Gopalan, Padma; Arnold, Michael S.

2016-01-01

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies. PMID:27617293

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.

PubMed

Brady, Gerald J; Way, Austin J; Safron, Nathaniel S; Evensen, Harold T; Gopalan, Padma; Arnold, Michael S

2016-09-01

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G 0 = 4e (2)/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G 0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm(-1), fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G 0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm(-1), which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm(-1) and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies.

Hybrid solar collector using nonimaging optics and photovoltaic components

NASA Astrophysics Data System (ADS)

Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

2015-08-01

The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

Microfabrication of microsystem-enabled photovoltaic (MEPV) cells

NASA Astrophysics Data System (ADS)

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose L.; Resnick, Paul J.; Wanlass, Mark W.; Clews, Peggy J.; Pluym, Tammy C.; Sanchez, Carlos A.; Gupta, Vipin P.

2011-02-01

Microsystem-Enabled Photovoltaic (MEPV) cells allow solar PV systems to take advantage of scaling benefits that occur as solar cells are reduced in size. We have developed MEPV cells that are 5 to 20 microns thick and down to 250 microns across. We have developed and demonstrated crystalline silicon (c-Si) cells with solar conversion efficiencies of 14.9%, and gallium arsenide (GaAs) cells with a conversion efficiency of 11.36%. In pursuing this work, we have identified over twenty scaling benefits that reduce PV system cost, improve performance, or allow new functionality. To create these cells, we have combined microfabrication techniques from various microsystem technologies. We have focused our development efforts on creating a process flow that uses standard equipment and standard wafer thicknesses, allows all high-temperature processing to be performed prior to release, and allows the remaining post-release wafer to be reprocessed and reused. The c-Si cell junctions are created using a backside point-contact PV cell process. The GaAs cells have an epitaxially grown junction. Despite the horizontal junction, these cells also are backside contacted. We provide recent developments and details for all steps of the process including junction creation, surface passivation, metallization, and release.

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Chiu, T. T.; Loo, R. Y.

1981-01-01

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

NASA Astrophysics Data System (ADS)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

NASA Technical Reports Server (NTRS)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1984-01-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Resonant features of the terahertz generation in semiconductor nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trukhin, V. N., E-mail: valera.truchin@mail.ioffe.ru; Bouravleuv, A. D.; Mustafin, I. A.

2016-12-15

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

Skylab

NASA Image and Video Library

1970-01-01

This is a photograph of a technician checking on a solar array wing for the Orbital Workshop as it is deployed. A solar array, consisting of two wings covered on one side with solar cells, was mounted outside the workshop to generate electrical power to augment the power generated by another solar array mounted on the solar observatory.

Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells

DOE PAGES

Oshima, Ryuji; France, Ryan M.; Geisz, John F.; ...

2016-10-13

The growth of quaternary Ga 0.68In 0.32As 0.35P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation, we fabricated 1 um-thick lattice-matched GaInAsP films grown on GaAs(001) for application to solar cells. In order to characterize the effect of the surface diffusion of adatoms on the material quality of alloys, the growth temperature and substrate miscut are varied. Transmission electron microscopy and two-dimensional in-situ multi-beam optical stress determine that growth temperatures of 650 degrees C and below enhance the formation of the CuPtB atomic ordering andmore » suppress material decomposition, which is found to occur at the growth surface. The root-mean-square (RMS) roughness is reduced from 33.6 nm for 750 degrees C to 1.62 nm for 650 degrees C, determined by atomic force microscopy. Our initial investigations show that the RMS roughness can be further reduced using increased miscut angle, and substrates miscut toward (111)A, leading to an RMS roughness of 0.56 nm for the sample grown at 600 degrees C on GaAs miscut 6 degrees toward (111)A. Using these conditions, we fabricate an inverted hetero-junction 1.62 eV Ga 0.68In 0.32As 0.35P 0.65 solar cell without an anti-reflection coating with a short-circuit current density, open-circuit voltage, fill factor, and efficiency of 12.23 mA/cm2, 1.12 V, 86.18%, and 11.80%, respectively.« less

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

PubMed Central

Shang, Yunfei; Hao, Shuwei; Yang, Chunhui; Chen, Guanying

2015-01-01

Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed. PMID:28347095

The revised solar array synthesis computer program

NASA Technical Reports Server (NTRS)

1970-01-01

The Revised Solar Array Synthesis Computer Program is described. It is a general-purpose program which computes solar array output characteristics while accounting for the effects of temperature, incidence angle, charged-particle irradiation, and other degradation effects on various solar array configurations in either circular or elliptical orbits. Array configurations may consist of up to 75 solar cell panels arranged in any series-parallel combination not exceeding three series-connected panels in a parallel string and no more than 25 parallel strings in an array. Up to 100 separate solar array current-voltage characteristics, corresponding to 100 equal-time increments during the sunlight illuminated portion of an orbit or any 100 user-specified combinations of incidence angle and temperature, can be computed and printed out during one complete computer execution. Individual panel incidence angles may be computed and printed out at the user's option.

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

Space Environment Information System (SPENVIS)

NASA Astrophysics Data System (ADS)

Kruglanski, M.; Messios, N.; de Donder, E.; Gamby, E.; Calders, S.; Hetey, L.; Evans, H.

2009-04-01

SPENVIS is an ESA operational software developed and maintained at BIRA-IASB since 1996. It provides standardized access to most of the recent models of the hazardous space environment, through a user-friendly Web interface (http://www.spenvis.oma.be/). The system allows spacecraft engineers to perform a rapid analysis of environmental problems related to natural radiation belts, solar energetic particles, cosmic rays, plasmas, gases, magnetic fields and micro-particles. Various reporting and graphical utilities and extensive help facilities are included to allow engineers with relatively little familiarity to produce reliable results. SPENVIS also contains an active, integrated version of the ECSS Space Environment Standard and access to in-flight data on the space environment. Although SPENVIS in the first place is designed to help spacecraft engineers, it is also used by technical universities in their educational programs. At present more than 4000 users are registered. With SPENVIS, one can generate a spacecraft trajectory or a coordinate grid and then calculate: geomagnetic coordinates; trapped proton and electron fluxes; solar proton fluences; cosmic ray fluxes; radiation doses (ionising and non-ionising) for simple geometries; a sectoring analysis for dose calculations in more complex geometries; damage equivalent fluences for Si, GaAs and multi-junction solar cells; Geant4 Monte Carlo analysis for doses and pulse height rates in planar and spherical shields; ion LET and flux spectra and single event upset rates; trapped proton flux anisotropy; atmospheric and ionospheric densities and temperatures; atomic oxygen erosion depths; surface and internal charging characteristics; solar array current collections and power losses; wall damage. The new version of SPENVIS (to be released in January 2009) also allows mission analysis for Mars and Jupiter.

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta;

MILSTAR's flexible substrate solar array: Lessons learned, addendum

NASA Technical Reports Server (NTRS)

Gibb, John

1990-01-01

MILSTAR's Flexible Substrate Solar Array (FSSA) is an evolutionary development of the lightweight, flexible substrate design pioneered at Lockheed during the seventies. Many of the features of the design are related to the Solar Array Flight Experiment (SAFE), flown on STS-41D in 1984. FSSA development has created a substantial technology base for future flexible substrate solar arrays such as the array for the Space Station Freedom. Lessons learned during the development of the FSSA can and should be applied to the Freedom array and other future flexible substrate designs.

An IBM PC-based math model for space station solar array simulation

NASA Technical Reports Server (NTRS)

Emanuel, E. M.

1986-01-01

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Photovoltaic solar array technology required for three wide scale generating systems for terrestrial applications: rooftop, solar farm, and satellite

NASA Technical Reports Server (NTRS)

Berman, P. A.

1972-01-01

Three major options for wide-scale generation of photovoltaic energy for terrestrial use are considered: (1) rooftop array, (2) solar farm, and (3) satellite station. The rooftop array would use solar cell arrays on the roofs of residential or commercial buildings; the solar farm would consist of large ground-based arrays, probably in arid areas with high insolation; and the satellite station would consist of an orbiting solar array, many square kilometers in area. The technology advancement requirements necessary for each option are discussed, including cost reduction of solar cells and arrays, weight reduction, resistance to environmental factors, reliability, and fabrication capability, including the availability of raw materials. The majority of the technology advancement requirements are applicable to all three options, making possible a flexible basic approach regardless of the options that may eventually be chosen. No conclusions are drawn as to which option is most advantageous, since the feasibility of each option depends on the success achieved in the technology advancement requirements specified.

Solar maximum: Solar array degradation

NASA Technical Reports Server (NTRS)

Miller, T.

1985-01-01

The 5-year in-orbit power degradation of the silicon solar array aboard the Solar Maximum Satellite was evaluated. This was the first spacecraft to use Teflon R FEP as a coverglass adhesive, thus avoiding the necessity of an ultraviolet filter. The peak power tracking mode of the power regulator unit was employed to ensure consistent maximum power comparisons. Telemetry was normalized to account for the effects of illumination intensity, charged particle irradiation dosage, and solar array temperature. Reference conditions of 1.0 solar constant at air mass zero and 301 K (28 C) were used as a basis for normalization. Beginning-of-life array power was 2230 watts. Currently, the array output is 1830 watts. This corresponds to a 16 percent loss in array performance over 5 years. Comparison of Solar Maximum Telemetry and predicted power levels indicate that array output is 2 percent less than predictions based on an annual 1.0 MeV equivalent election fluence of 2.34 x ten to the 13th power square centimeters space environment.

Space solar array reliability: A study and recommendations

NASA Astrophysics Data System (ADS)

Brandhorst, Henry W., Jr.; Rodiek, Julie A.

2008-12-01

Providing reliable power over the anticipated mission life is critical to all satellites; therefore solar arrays are one of the most vital links to satellite mission success. Furthermore, solar arrays are exposed to the harshest environment of virtually any satellite component. In the past 10 years 117 satellite solar array anomalies have been recorded with 12 resulting in total satellite failure. Through an in-depth analysis of satellite anomalies listed in the Airclaim's Ascend SpaceTrak database, it is clear that solar array reliability is a serious, industry-wide issue. Solar array reliability directly affects the cost of future satellites through increased insurance premiums and a lack of confidence by investors. Recommendations for improving reliability through careful ground testing, standardization of testing procedures such as the emerging AIAA standards, and data sharing across the industry will be discussed. The benefits of creating a certified module and array testing facility that would certify in-space reliability will also be briefly examined. Solar array reliability is an issue that must be addressed to both reduce costs and ensure continued viability of the commercial and government assets on orbit.

Space Plasma Shown to Make Satellite Solar Arrays Fail

NASA Technical Reports Server (NTRS)

Ferguson, Dale C.

1999-01-01

In 1997, scientists and engineers of the Photovoltaic and Space Environments Branch of the NASA Lewis Research Center, Maxwell Technologies, and Space Systems/Loral discovered a new failure mechanism for solar arrays on communications satellites in orbit. Sustained electrical arcs, initiated by the space plasma and powered by the solar arrays themselves, were found to have destroyed solar array substrates on some Space Systems/Loral satellites, leading to array failure. The mechanism was tested at Lewis, and mitigation strategies were developed to prevent such disastrous occurrences on-orbit in the future. Deep Space 1 is a solar-electric-powered space mission to a comet, launched on October 24, 1998. Early in 1998, scientists at Lewis and Ballistic Missile Defense Organization (BMDO) realized that some aspects of the Deep Space 1 solar arrays were nearly identical to those that had led to the failure of solar arrays on Space Systems/Loral satellites. They decided to modify the Deep Space 1 arrays to prevent catastrophic failure in space. The arrays were suitably modified and are now performing optimally in outer space. Finally, the Earth Observing System (EOS) AM1, scheduled for launch in mid-1999, is a NASA mission managed by the Goddard Space Flight Center. Realizing the importance of Lewis testing on the Loral arrays, EOS-AM1 management asked Lewis scientists to test their solar arrays to show that they would not fail in the same way. The first phase of plasma testing showed that sustained arcing would occur on the unmodified EOS-AM1 arrays, so the arrays were removed from the spacecraft and fixed. Now, Lewis scientists have finished plasma testing of the modified array configuration to ensure that EOS-AM1 will have no sustained arcing problems on-orbit.

Photogrammetric Assessment of the Hubble Space Telescope Solar Arrays During the Second Servicing Mission

NASA Technical Reports Server (NTRS)

Sapp, C. A.; Dragg, J. L.; Snyder, M. W.; Gaunce, M. T.; Decker, J. E.

1998-01-01

This report documents the photogrammetric assessment of the Hubble Space Telescope (HST) solar arrays conducted by the NASA c Center Image Science and Analysis Group during Second Servicing Mission 2 (SM-2) on STS-82 in February 1997. Two type solar array analyses were conducted during the mission using Space Shuttle payload bay video: (1) measurement of solar array motion due to induced loads, and (2) measurement of the solar array static or geometric twist caused by the cumulative array loading. The report describes pre-mission planning and analysis technique development activities conducted to acquire and analyze solar array imagery data during SM-2. This includes analysis of array motion obtained during SM-1 as a proof-of-concept of the SM-2 measurement techniques. The report documents the results of real-time analysis conducted during the mission and subsequent analysis conducted post-flight. This report also provides a summary of lessons learned on solar array imagery analysis from SM-2 and recommendations for future on-orbit measurements applicable to HST SM-3 and to the International Space Station. This work was performed under the direction of the Goddard Space Flight Center HST Flight Systems and Servicing Project.

Review of biased solar arraay. Plasma interaction studies

NASA Technical Reports Server (NTRS)

Stevens, N. J.

1981-01-01

The Solar Electric Propulsion System (SEPS) is proposed for a variety of space missions. Power for operating SEPS is obtained from large solar array wings capable of generating tens of kilowatts of power. To minimize resistive losses in the solar array bus lines, the array is designed to operate at voltages up to 400 volts. This use of high voltage can increase interactions between the biased solar cell interconnects and plasma environments. With thrusters operating, the system ground is maintained at space plasma potential which exposes large areas of the arrays at the operating voltages. This can increase interactions with both the natural and enhanced charged particle environments. Available data on interactions between biased solar array surfaces and plasma environments are summarized. The apparent relationship between collection phenomena and solar cell size and effects of array size on interactions are discussed. The impact of these interactions on SEPS performance is presented.

Spectrophotovoltaic orbital power generation

NASA Technical Reports Server (NTRS)

Knowles, G.; Carroll, J.

1983-01-01

A subscale model of a photovoltaic power system employing spectral splitting and 1000:1 concentration was fabricated and tested. The 10-in. aperture model demonstrated 15.5% efficiency with 86% of the energy produced by a GaAs solar cell and 14% of the energy produced by an Si cell. The calculated efficiency of the system using the same solar cells, but having perfect optics, would be approximately 20%. The model design, component measurements, test results, and mathematical model are presented.

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

NASA Technical Reports Server (NTRS)

Wickham, K. R.; Chung, B.-C.; Klausmeier-Brown, M.; Kuryla, M. S.; Ristow, M. Ladle; Virshup, G. F.; Werthen, J. G.

1991-01-01

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Multi-wavelength VCSEL arrays using high-contrast gratings

NASA Astrophysics Data System (ADS)

Haglund, Erik; Gustavsson, Johan S.; Sorin, Wayne V.; Bengtsson, Jörgen; Fattal, David; Haglund, Àsa; Tan, Michael; Larsson, Anders

2017-02-01

The use of a high-contrast grating (HCG) as the top mirror in a vertical-cavity surface-emitting laser (VCSEL) allows for setting the resonance wavelength by the grating parameters in a post-epitaxial growth fabrication process. Using this technique, we demonstrate electrically driven multi-wavelength VCSEL arrays at 980 nm wavelength. The VCSELs are GaAs-based and the suspended GaAs HCGs were fabricated using electron-beam lithography, dry etching and selective removal of an InGaP sacrificial layer. The air-coupled cavity design enabled 4-channel arrays with 5 nm wavelength spacing and sub-mA threshold currents thanks to the high HCG reflectance.

Design of a 7kW power transfer solar array drive mechanism

NASA Technical Reports Server (NTRS)

Sheppard, J. G.

1982-01-01

With the availability of the Shuttle and the European launcher, Ariane, there will be a continuing trend towards large payload satellite missions requiring high-power, high-inertia, flexible solar arrays. The need arises for a solar array drive with a large power transfer capability which can rotate these solar arrays without disturbing the satellite body pointing. The modular design of such a Solar Array Drive Mechanism (SADM) which is capable of transferring 7kW of power or more is described. Total design flexibility has been achieved, enabling different spacecraft power requirements to be accommodated within the SADM design.

Cost competitiveness of a solar cell array power source for ATS-6 educational TV terminal

NASA Technical Reports Server (NTRS)

Masters, R. M.

1975-01-01

A cost comparison is made between a terrestrial solar cell array power system and a variety of other power sources for the ATS-6 Satellite Instructional Television Experiment (SITE) TV terminals in India. The solar array system was sized for a typical Indian location, Lahore. Based on present capital and fuel costs, the solar cell array power system is a close competitor to the least expensive alternate power system. A feasibility demonstration of a terrestrial solar cell array system powering an ATS-6 receiver terminal at Cleveland, Ohio is described.

The Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) yo-yo despin and solar array deployment mechanism

NASA Technical Reports Server (NTRS)

Kellogg, James W.

1993-01-01

The SAMPEX spacecraft, successfully launched in July 1992, carried a yo-yo despin system and deployable solar arrays. The despin and solar array mechanisms formed an integral system as the yo-yo cables held the solar array release mechanism in place. The SAMPEX design philosophy was to minimize size and weight through the use of a predominantly single string system. The design challenge was to build a system in a limited space, which was reliable with minimal redundancy. This paper covers the design and development of the SAMPEX yo-yo despin and solar array deployment mechanisms. The problems encountered during development and testing will also be discussed.

The Upper Atmosphere Research Satellite In-Flight Dynamics

NASA Technical Reports Server (NTRS)

Woodard, Stanley E.

1997-01-01

Upper Atmosphere Research Satellite flight data from the first 737 days after launch (September 1991) was used to investigate spacecraft disturbances and responses. The investigation included two in-flight dynamics experiments (approximately three orbits each). Orbital and configuration influences on spacecraft dynamic response were also examined. Orbital influences were due to temperature variation from crossing the Earth's terminator and variation of the solar incident energy as the orbit precessed. During the terminator crossing, the rapid ambient temperature change caused the spacecraft's two flexible appendages to experience thermal elastic bending (thermal snap). The resulting response was dependent upon the orientation of the solar array and the solar incident energy. Orbital influences were also caused by on-board and environmental disturbances and spacecraft configuration changes resulting in dynamic responses which were repeated each orbit. Configuration influences were due to solar array rotation changing spacecraft modal properties. The investigation quantified the spacecraft dynamic response produced by the solar array and high gain antenna harmonic drive disturbances. The solar array's harmonic drive output resonated two solar array modes. Friction in the solar array gear drive provided sufficient energy dissipation which prevented the solar panels from resonating catastrophically; however, the solar array vibration amplitude was excessively large. The resulting vibration had a latitude-specific pattern.

Promising Results from Three NASA SBIR Solar Array Technology Development Programs

NASA Technical Reports Server (NTRS)

Eskenazi, Mike; White, Steve; Spence, Brian; Douglas, Mark; Glick, Mike; Pavlick, Ariel; Murphy, David; O'Neill, Mark; McDanal, A. J.; Piszczor, Michael

2005-01-01

Results from three NASA SBIR solar array technology programs are presented. The programs discussed are: 1) Thin Film Photovoltaic UltraFlex Solar Array; 2) Low Cost/Mass Electrostatically Clean Solar Array (ESCA); and 3) Stretched Lens Array SquareRigger (SLASR). The purpose of the Thin Film UltraFlex (TFUF) Program is to mature and validate the use of advanced flexible thin film photovoltaics blankets as the electrical subsystem element within an UltraFlex solar array structural system. In this program operational prototype flexible array segments, using United Solar amorphous silicon cells, are being manufactured and tested for the flight qualified UltraFlex structure. In addition, large size (e.g. 10 kW GEO) TFUF wing systems are being designed and analyzed. Thermal cycle and electrical test and analysis results from the TFUF program are presented. The purpose of the second program entitled, Low Cost/Mass Electrostatically Clean Solar Array (ESCA) System, is to develop an Electrostatically Clean Solar Array meeting NASA s design requirements and ready this technology for commercialization and use on the NASA MMS and GED missions. The ESCA designs developed use flight proven materials and processes to create a ESCA system that yields low cost, low mass, high reliability, high power density, and is adaptable to any cell type and coverglass thickness. All program objectives, which included developing specifications, creating ESCA concepts, concept analysis and trade studies, producing detailed designs of the most promising ESCA treatments, manufacturing ESCA demonstration panels, and LEO (2,000 cycles) and GEO (1,350 cycles) thermal cycling testing of the down-selected designs were successfully achieved. The purpose of the third program entitled, "High Power Platform for the Stretched Lens Array," is to develop an extremely lightweight, high efficiency, high power, high voltage, and low stowed volume solar array suitable for very high power (multi-kW to MW) applications. These objectives are achieved by combining two cutting edge technologies, the SquareRigger solar array structure and the Stretched Lens Array (SLA). The SLA SquareRigger solar array is termed SLASR. All program objectives, which included developing specifications, creating preliminary designs for a near-term SLASR, detailed structural, mass, power, and sizing analyses, fabrication and power testing of a functional flight-like SLASR solar blanket, were successfully achieved.

KSC-00pp1219

NASA Image and Video Library

2000-08-30

A solar array is nearly in place on the Integrated Equipment Assembly, next to Solar Array Wing-3, which is already installed. Components of the International Space Station, the arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar

DTIC Science & Technology

2010-09-01

adds an extra dimension to both IPS and other observations. The polarization of the CME synchrotron emission observed by [3] will be of great...base funding. 8. REFERENCES 1. Kassim et al., The 74 MHz System on the Very Large Array, The Astrophysical Journal Supplement Series, Vol. 172...The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar Namir E. Kassim Naval Research

EVA 2 - old solar array installed in payload bay

NASA Image and Video Library

2002-03-05

STS109-326-008 (5 March 2002) --- Astronaut Michael J. Massimino, mission specialist, works at the stowage area for the Hubble Space Telescope's port side solar array. Astronauts Massimino and James H. Newman removed the old port solar array and stowed it in Columbia’s payload bay for a return to Earth. They then went on to install a third-generation solar array and its associated electrical components. Two crew mates had accomplished the same feat with the starboard array on the previous day.

Mars Solar Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Kerslake, Thomas W.; Jenkins, Phillip P.; Scheiman, David A.

2004-01-01

NASA missions to Mars, both robotic and human, rely on solar arrays for the primary power system. Mars presents a number of challenges for solar power system operation, including a dusty atmosphere which modifies the spectrum and intensity of the incident solar illumination as a function of time of day, degradation of the array performance by dust deposition, and low temperature operation. The environmental challenges to Mars solar array operation will be discussed and test results of solar cell technology operating under Mars conditions will be presented, along with modeling of solar cell performance under Mars conditions. The design implications for advanced solar arrays for future Mars missions is discussed, and an example case, a Martian polar rover, are analyzed.

Solar electric propulsion thruster interactions with solar arrays

NASA Technical Reports Server (NTRS)

Parks, D. E.; Katz, I.

1977-01-01

The effect of interactions of spacecraft-generated and naturally occurring plasmas with high voltage solar array components on an advanced solar electric propulsion system proposed for the Halley's Comet rendezvous mission was investigated. The spacecraft-generated plasma consists of mercury ions and neutralizing electrons resulting from the operation of ion thrusters (the charge-exchange plasma) and associated hollow cathode neutralizers. Quantitative results are given for the parasitic currents and power coupled into solar arrays with voltage fixed as a function of position on the array.

Space Station Freedom Solar Array design development

NASA Astrophysics Data System (ADS)

Winslow, Cindy

The SSF program's Electrical Power System supports a high-power bus with six solar-array wings in LEO; each solar array generates 30.8 kW at 161.1 V dc, with a deployed natural frequency of 0.1 Hz. Design challenges to the solar array, which must survive exposure for 15 years of operating life, include atomic oxygen, the thermal environment, and spacecraft propulsion plume-impingement loads. Tests thus far completed address cell UV-exposure effects, thermal cycling, and solar-cell deflection.

A Parametric Assessment of the Mission Applicability of Thin-film Solar Arrays

NASA Technical Reports Server (NTRS)

Hoffman, David J.

2002-01-01

Results are presented from a parametric assessment of the applicability and spacecraft-level impacts of very lightweight thin-film solar arrays with relatively large deployed areas for representative space missions. The most and least attractive features of thin-film solar arrays are briefly discussed. A calculation is then presented illustrating that from a solar array alone mass perspective, larger arrays with less efficient but lighter thin-film solar cells can weigh less than smaller arrays with more efficient but heavier crystalline cells. However, a spacecraft-level systems assessment must take into account the additional mass associated with solar array deployed area: the propellant needed to desaturate the momentum accumulated from area-related disturbance torques and to perform aerodynamic drag makeup reboost. The results for such an assessment are presented for a representative low Earth orbit (LEO) mission, as a function of altitude and mission life, and a geostationary Earth orbit (GEO) mission. Discussion of the results includes a list of specific mission types most likely to benefit from using thin-film arrays. The presentation concludes with a list of issues to be addressed prior to use of thin-film solar arrays in space and the observation that with their unique characteristics, very lightweight arrays using efficient, thin film cells on flexible substrates may become the best array option for a subset of Earth orbiting and deep space missions.

SMEX-Lite Modular Solar Array Architecture

NASA Technical Reports Server (NTRS)

Lyons, John

2002-01-01

For the most part, Goddard solar arrays have been custom designs that are unique to each mission. The solar panel design has been frozen prior to issuing an RFP for their procurement. There has typically been 6-9 months between RFP release and contract award, followed by an additional 24 months for performance of the contract. For Small Explorer (SMEX) missions, with three years between mission definition and launch, this has been a significant problem. The SMEX solar panels have been sufficiently small that the contract performance period has been reduced to 12-15 months. The bulk of this time is used up in the final design definition and fabrication of flight solar cell assemblies. Even so, it has been virtually impossible to have the spacecraft design at a level of maturity sufficient to freeze the solar panel geometry and release the RFP in time to avoid schedule problems with integrating the solar panels to the spacecraft. With that in mind, the SMEX-Lite project team developed a modular architecture for the assembly of solar arrays to greatly reduce the cost and schedule associated with the development of a mission- specific solar array. In the modular architecture, solar cells are fabricated onto small substrate panels. This modular panel (approximately 8.5" x 17" in this case) becomes the building block for constructing solar arrays for multiple missions with varying power requirements and geometrical arrangements. The mechanical framework that holds these modules together as a solar array is the only mission-unique design, changing in size and shape as required for each mission. There are several advantages to this approach. First, the typical solar array development cycle requires a mission unique design, procurement, and qualification including a custom qualification panel. With the modular architecture, a single qualification of the SMEX-Lite modules and the associated mechanical framework in a typical configuration provided a qualification by similarity to multiple missions. It then becomes possible to procure solar array modules in advance of mission definition and respond quickly and inexpensively to a selected mission's unique requirements. The solar array modular architecture allows the procurement of solar array modules before the array geometry has been frozen. This reduces the effect of procurement lead-time on the mission integration and test flow by as much as 50%. Second, by spreading the non-recurring costs over multiple missions, the cost per unit area is also reduced. In the case of the SMEX-Lite procurement, this reduction was by about one third of the cost per unit area compared to previous SMEX mission-unique procurements. Third, the modular architecture greatly facilitates the infusion of new solar cell technologies into flight programs as these technologies become available. New solar cell technologies need only be fabricated onto a standard-sized module to be incorporated into the next available mission. The modular solar array can be flown in a mixed configuration with some new and some standard cell technologies. Since each module has its own wiring terminals, the array can be arranged as desired electrically with little impact to cost and schedule. The solar array modular architecture does impose some additional constraints on systems and subsystem engineers. First, they must work with discrete solar array modules rather than size the array to fit exactly within an available envelope. The array area is constrained to an integer multiple of the module area. Second, the modular design is optimized for space radiation and thermal environments not greatly different from a typical SMEX LEO environment. For example, a mission with a highly elliptical orbit (e.g., Polar, SMEX/FAST) would require thicker coverglasses to protect the solar cells from the more intense radiation environment.

Theoretical models of Kapton heating in solar array geometries

NASA Technical Reports Server (NTRS)

Morton, Thomas L.

1992-01-01

In an effort to understand pyrolysis of Kapton in solar arrays, a computational heat transfer program was developed. This model allows for the different materials and widely divergent length scales of the problem. The present status of the calculation indicates that thin copper traces surrounded by Kapton and carrying large currents can show large temperature increases, but the other configurations seen on solar arrays have adequate heat sinks to prevent substantial heating of the Kapton. Electron currents from the ambient plasma can also contribute to heating of thin traces. Since Kapton is stable at temperatures as high as 600 C, this indicates that it should be suitable for solar array applications. There are indications that the adhesive sued in solar arrays may be a strong contributor to the pyrolysis problem seen in solar array vacuum chamber tests.

PEP solar array definition study

NASA Technical Reports Server (NTRS)

1979-01-01

The conceptual design of a large, flexible, lightweight solar array is presented focusing on a solar array overview assessment, solar array blanket definition, structural-mechanical systems definition, and launch/reentry blanket protection features. The overview assessment includes a requirements and constraints review, the thermal environment assessment on the design selection, an evaluation of blanket integration sequence, a conceptual blanket/harness design, and a hot spot analysis considering the effects of shadowing and cell failures on overall array reliability. The solar array blanket definition includes the substrate design, hinge designs and blanket/harness flexibility assessment. The structural/mechanical systems definition includes an overall loads and deflection assessment, a frequency analysis of the deployed assembly, a components weights estimate, design of the blanket housing and tensioning mechanism. The launch/reentry blanket protection task includes assessment of solar cell/cover glass cushioning concepts during ascent and reentry flight condition.

KSC-00pp1214

NASA Image and Video Library

2000-08-30

The overhead crane carrying a solar array turns on its axis to move the array to the Integrated Equipment Assembly (IEA) for installation. A component of the International Space Station, the solar array is the second one being installed on the IEA. The arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

Progressing Deployment of Solar Photovoltaic Installations in the United States

NASA Astrophysics Data System (ADS)

Kwan, Calvin Lee

2011-07-01

This dissertation evaluates the likelihood of solar PV playing a larger role in national and state level renewable energy portfolios. I examine the feasibility of large-scale solar PV arrays on college campuses, the financials associated with large-scale solar PV arrays and finally, the influence of environmental, economic, social and political variables on the distribution of residential solar PV arrays in the United States. Chapter two investigates the challenges and feasibility of college campuses adopting a net-zero energy policy. Using energy consumption data, local solar insolation data and projected campus growth, I present a method to identify the minimum sized solar PV array that is required for the City College campus of the Los Angeles Community College District to achieve net-zero energy status. I document how current energy demand can be reduced using strategic demand side management, with remaining energy demand being met using a solar PV array. Chapter three focuses on the financial feasibility of large-scale solar PV arrays, using the proposed City College campus array as an example. I document that even after demand side energy management initiatives and financial incentives, large-scale solar PV arrays continue to have ROIs greater than 25 years. I find that traditional financial evaluation methods are not suitable for environmental projects such as solar PV installations as externalities are not taken into account and therefore calls for development of alternative financial valuation methods. Chapter four investigates the influence of environmental, social, economic and political variables on the distribution of residential solar PV arrays across the United States using ZIP code level data from the 2000 US Census. Using data from the National Renewable Energy Laboratory's Open PV project, I document where residential solar PVs are currently located. A zero-inflated negative binomial model was run to evaluate the influence of selected variables. Using the same model, predicted residential solar PV shares were generated and illustrated using GIS software. The results of this model indicate that solar insolation, state energy deregulation and cost of electricity are statistically significant factors positively correlated with the adoption of residential solar PV arrays. With this information, policymakers at the towns and cities level can establish effective solar PV promoting policies and regulations for their respective locations.

Study program for encapsulation materials interface for low-cost solar array

NASA Technical Reports Server (NTRS)

Kaelble, D. H.; Mansfeld, F. B.; Kendig, M.; Leung, C.

1981-01-01

The service integrity of the bonded interface in solar cell modules used in solar arrays is addressed. The development of AC impedance as a nondestructive evaluation (NDE) methodology for solar arrays is reported along with development of corrosion models and materials selection criteria for corrosion resistant interfaces.

A lightweight solar array study

NASA Technical Reports Server (NTRS)

Josephs, R. H.

1977-01-01

A sample module was assembled to model a portion of a flexible extendable solar array, a type that promises to become the next generation of solar array design. The resulting study of this module is intended to provide technical support to the array designer for lightweight component selection, specifications, and tests. Selected from available lightweight components were 127-micron-thick wrap-around contacted solar cells, 34- micron-thick sputtered glass covers, and as a substrate a 13-micron-thick polyimide film clad with a copper printed circuit. Each component displayed weaknesses. The thin solar cells had excessive breakage losses. Sputtered glass cover adhesion was poor, and the covered cell was weaker than the cell uncovered. Thermal stresses caused some cell delamination from the model solar array substrate.

Demonstration of First 9 Micron cutoff 640 x 486 GaAs Based Quantum Well Infrared PhotoDetector (QWIP) Snap-Shot Camera

NASA Technical Reports Server (NTRS)

Gunapala, S.; Bandara, S. V.; Liu, J. K.; Hong, W.; Sundaram, M.; Maker, P. D.; Muller, R. E.

1997-01-01

In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.

KSC-00pp1217

NASA Image and Video Library

2000-08-30

In the Space Station Processing Facility, workers help guide a solar array into position for installation on the Integrated Equipment Assembly. Solar Array Wing-3 is already in place. Components of the International Space Station, the arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1215

NASA Image and Video Library

2000-08-30

In the Space Station Processing Facility, the overhead crane carrying a solar array arrives at the Integrated Equipment Assembly (IEA) on which it will be installed. Solar Array Wing-3 is already in place. Components of the International Space Station, the arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1218

NASA Image and Video Library

2000-08-30

Workers in the Space Station Processing Facility give close attention to the placement of a solar array on the Integrated Equipment Assembly. Solar Array Wing-3 is already in place. Components of the International Space Station, the arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

Reliability analysis method of a solar array by using fault tree analysis and fuzzy reasoning Petri net

NASA Astrophysics Data System (ADS)

Wu, Jianing; Yan, Shaoze; Xie, Liyang

2011-12-01

To address the impact of solar array anomalies, it is important to perform analysis of the solar array reliability. This paper establishes the fault tree analysis (FTA) and fuzzy reasoning Petri net (FRPN) models of a solar array mechanical system and analyzes reliability to find mechanisms of the solar array fault. The index final truth degree (FTD) and cosine matching function (CMF) are employed to resolve the issue of how to evaluate the importance and influence of different faults. So an improvement reliability analysis method is developed by means of the sorting of FTD and CMF. An example is analyzed using the proposed method. The analysis results show that harsh thermal environment and impact caused by particles in space are the most vital causes of the solar array fault. Furthermore, other fault modes and the corresponding improvement methods are discussed. The results reported in this paper could be useful for the spacecraft designers, particularly, in the process of redesigning the solar array and scheduling its reliability growth plan.

Microprocessor control of multiple peak power tracking DC/DC converters for use with solar cell arrays

NASA Technical Reports Server (NTRS)

Frederick, Martin E. (Inventor); Jermakian, Joel (Inventor)

1991-01-01

A method and an apparatus is provided for efficiently controlling the power output of a solar cell array string or a plurality of solar cell array strings to achieve a maximum amount of output power from the strings under varying conditions of use. Maximum power output from a solar array string is achieved through control of a pulse width modulated DC/DC buck converter which transfers power from a solar array to a load or battery bus. The input voltage from the solar array to the converter is controlled by a pulse width modulation duty cycle, which in turn is controlled by a differential signal controller. By periodically adjusting the control voltage up or down by a small amount and comparing the power on the load or bus with that generated at different voltage values a maximum power output voltage may be obtained. The system is totally modular and additional solar array strings may be added to the system simply by adding converter boards to the system and changing some constants in the controller's control routines.

Photovoltaic cells for laser power beaming

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Jain, Raj K.

1992-01-01

To better understand cell response to pulsed illumination at high intensity, the PC-1DC finite-element computer model was used to analyze the response of solar cells to pulsed laser illumination. Over 50% efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modelled, and the effect of laser intensity, wavelength, and bias point was studied. Designing a cell to accommodate pulsed input can be done either by accepting the pulsed output and designing a cell to minimize adverse effects due to series resistance and inductance, or to design a cell with a long enough minority carrier lifetime, so that the output of the cell will not follow the pulse shape. Two such design possibilities are a monolithic, low-inductance voltage-adding GaAs cell, or a high-efficiency, light-trapping silicon cell. The advantages of each design will be discussed.

Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics

DTIC Science & Technology

2014-05-15

important performance degradation mechanism, and provides a target for future comparisons with MBE-grown QD/host systems . 15. SUBJECT TERMS solar ...challenge for every photovoltaics ( PV ) technology. For space solar cell technologies, the III-V multijunction (MJ) concept has been the leading approach to...gap composition, without the need for high Al concentrations, is nonetheless available in the GaAsP alloy system at GaAs0.52P0.48, which is

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap

NASA Technical Reports Server (NTRS)

Mathur, G.; Wheaton, M. L.; Borrego, J. M.; Ghandhi, S. K.

1985-01-01

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Deposition of InP on Si Substrates for Monolithic Integration of Advanced Electronics

DTIC Science & Technology

1988-05-01

radiation resistance of InP has been demonstrated (in terms of solar cell experiments) to be quite superior to that of either GaAs or Si.( 1 , 2) In fact... photovoltaic p/n junction devices irradiated by I MeV electrons have been shown to almost totallv recover their electrical performance by annealing at...in the literature.(l5 2 2) The NTT group has succeeded in growing InP films directly on Si substrates and in fabricating solar cells (approximately 3

The interactions of solar arrays with electric thrusters

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Isaacson, G. C.; Domitz, S.

1976-01-01

The generation of a charge-exchange plasma by a thruster, the transport of this plasma to the solar array, and the interaction of the solar array with the plasma after it arrives are all described. The generation of this plasma can be described accurately from thruster geometry and operating conditions. The transport of the charge-exchange plasma was studied experimentally with a 15 cm thruster. A model was developed for simple thruster-array configurations. A variety of experiments were surveyed for the interaction of the plasma at the solar array.

Flat-plate solar array progress and plans

NASA Technical Reports Server (NTRS)

Callaghan, W. T.

1984-01-01

The results of research into the technology of flat-plate solar arrays undertaken in the Flat-Plate Solar Array Project under the sponsorship of the U.S. Department of Energy are surveyed. Topics examined include Si refinement, ribbon-sheet substrate formation, module process sequences, environmental isolation, module engineering and testing, and photovoltaic-array economics.

Measurement of high-voltage and radiation-damage limitations to advanced solar array performance

NASA Technical Reports Server (NTRS)

Guidice, D. A.; Severance, P. S.; Keinhardt, K. C.

1991-01-01

A description is given of the reconfigured Photovoltaic Array Space Power (PASP) Plus experiment: its objectives, solar-array complement, and diagnostic sensors. Results from a successful spaceflight will lead to a better understanding of high-voltage and radiation-damage limitations in the operation of new-technology solar arrays.

Lightweight Solar Power for Small Satellites

NASA Technical Reports Server (NTRS)

Nabors, Sammy A.

2015-01-01

The innovation targets small satellites or CubeSats for which conventional deployable arrays are not feasible due to their size, weight and complexity. This novel solar cell array includes a thin and flexible photovoltaic cell applied to an inflatable structure to create a high surface area array for collecting solar energy in a lightweight, simple and deployable structure. The inflatable array, with its high functional surface area, eliminates the need and the mechanisms required to point the system toward the sun. The power density achievable in these small arrays is similar to that of conventional high-power deployable/pointable arrays used on large satellites or space vehicles. Although inflatable solar arrays have been previously considered by others, the arrays involved the use of traditional rigid solar cells. Researchers are currently working with thin film photovoltaics from various suppliers so that the NASA innovation is not limited to any particular solar cell technology. NASA has built prototypes and tested functionality before and after inflation. As shown in the current-voltage currents below, deployment does not damage the cell performance.

P6 Truss, Photovoltaic (PV) Solar Array Wing (SAW)

NASA Image and Video Library

2000-12-07

STS097-376-019 (7 December 2000) --- A close-up view of the P6 solar array on the International Space Station (ISS), backdropped against the blackness of space and the Earth’s horizon. The P6 solar array is the first of eight sets of solar arrays that at the completion of the space station construction in 2006, will comprise the station’s electrical power system, converting sunlight to electricity.

P6 Truss, Photovoltaic (PV) Solar Array Wing (SAW)

NASA Image and Video Library

2000-12-07

STS097-376-006 (7 Dec 2000) --- A close-up view of the P6 solar array on the International Space Station (ISS), backdropped against the blackness of space and the Earth?s horizon. The P6 solar array is the first of eight sets of solar arrays that at the completion of the space station construction in 2006, will comprise the station?s electrical power system, converting sunlight to electricity.

Deployment dynamics and control of large-scale flexible solar array system with deployable mast

NASA Astrophysics Data System (ADS)

Li, Hai-Quan; Liu, Xiao-Feng; Guo, Shao-Jing; Cai, Guo-Ping

2016-10-01

In this paper, deployment dynamics and control of large-scale flexible solar array system with deployable mast are investigated. The adopted solar array system is introduced firstly, including system configuration, deployable mast and solar arrays with several mechanisms. Then dynamic equation of the solar array system is established by the Jourdain velocity variation principle and a method for dynamics with topology changes is introduced. In addition, a PD controller with disturbance estimation is designed to eliminate the drift of spacecraft mainbody. Finally the validity of the dynamic model is verified through a comparison with ADAMS software and the deployment process and dynamic behavior of the system are studied in detail. Simulation results indicate that the proposed model is effective to describe the deployment dynamics of the large-scale flexible solar arrays and the proposed controller is practical to eliminate the drift of spacecraft mainbody.

Options Studied for Managing Space Station Solar Array Electrical Hazards for Sequential Shunt Unit Replacement

NASA Technical Reports Server (NTRS)

Delleur, Ann M.; Kerslake, Thomas W.; Levy, Robert K.

2004-01-01

The U.S. solar array strings on the International Space Station are connected to a sequential shunt unit (SSU). The job of the SSU is to shunt, or short, the excess current from the solar array, such that just enough current is provided downstream to maintain the 160-V bus voltage while meeting the power load demand and recharging the batteries. Should an SSU fail on-orbit, it would be removed and replaced with the on-orbit spare during an astronaut space walk or extravehicular activity (EVA) (see the photograph). However, removing an SSU during an orbit Sun period with input solar array power connectors fully energized could result in substantial hardware damage and/or safety risk to the EVA astronaut. The open-circuit voltage of cold solar-array strings can exceed 320 V, and warm solar-array strings could feed a short circuit with a total current level exceeding 240 A.

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

NASA Technical Reports Server (NTRS)

Partain, L. D.; Chung, B.-C.; Virshup, G. F.; Schultz, J. C.; Macmillan, H. F.; Ristow, M. Ladle; Kuryla, M. S.; Bertness, K. A.

1991-01-01

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

Space Power Amplification with Active Linearly Tapered Slot Antenna Array

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Lee, Richard Q.

1993-01-01

A space power amplifier composed of active linearly tapered slot antennas (LTSA's) has been demonstrated and shown to have a gain of 30 dB at 20 GHz. In each of the antenna elements, a GaAs monolithic microwave integrated circuit (MMIC) three-stage power amplifier is integrated with two LTSA's. The LTSA and the MMIC power amplifier has a gain of 11 dB and power added efficiency of 14 percent respectively. The design is suitable for constructing a large array using monolithic integration techniques.

Daytime Solar Heating of Photovoltaic Arrays in Low Density Plasmas

NASA Technical Reports Server (NTRS)

Galofaro, J.; Vayner, B.; Ferguson, D.

2003-01-01

The purpose of the current work is to determine the out-gassing rate of H2O molecules for a solar array placed under daytime solar heating (full sunlight) conditions typically encountered in a Low Earth Orbital (LEO) environment. Arc rates are established for individual arrays held at 14 C and are used as a baseline for future comparisons. Radiated thermal solar flux incident to the array is simulated by mounting a stainless steel panel equipped with resistive heating elements several centimeters behind the array. A thermal plot of the heater plate temperature and the array temperature as a function of heating time is then obtained. A mass spectrometer is used to record the levels of partial pressure of water vapor in the test chamber after each of the 5 heating/cooling cycles. Each of the heating cycles was set to time duration of 40 minutes to simulate the daytime solar heat flux to the array over a single orbit. Finally the array is cooled back to ambient temperature after 5 complete cycles and the arc rates of the solar arrays is retested. A comparison of the various data is presented with rather some unexpected results.

Advances in space power research and technology at the National Aeronautics and Space Administration

NASA Technical Reports Server (NTRS)

Mullin, J. P.; Randolph, L. P.; Hudson, W. R.; Ambrus, J. H.

1981-01-01

Progress and plans in various areas of the NASA Space Power Program are discussed. Solar cell research is narrowed to GaAs, multibandgap, and thin Si cells for arrays in planar and concentrator configurations, with further work to increase cell efficiency, radiation hardness, develop flexible encapsulants, and reduce cost. Electrochemical research is concentrating on increasing energy and power density, cycle and wet stand life, reliability and cost reduction of batteries. Further development of the Ni-H2 battery and O2-H2 fuel cell to multihundred kW with a 5 year life and 30,000 cycles is noted. Basic research is ongoing for alkali metal anodes for high energy density secondary cells. Nuclear thermoelectric propulsion is being developed for outer planets exploration propulsion systems, using Si-Ge generators, and studies with rare earth chalcogenides and sulfides are mentioned. Power Systems Management seeks to harmonize increasing power supply levels with inner and outer spacecraft environments, circuits, demands, and automatic monitoring. Concomitant development of bipolar transistors, an infrared rectenna, spacecraft charging measurement, and larger heat pipe transport capacity are noted.

Mariner 9 Solar Array Design, Manufacture, and Performance

NASA Technical Reports Server (NTRS)

Sequeira, E. A.

1973-01-01

The mission of Mariner 9, the first spacecraft to orbit another planet, was to make scientific observations of the surface of Mars. Throughout this unique mission, the Mariner 9 solar array successfully supported the power requirements of the spacecraft without experiencing anomalies. Basically, the design of the solar array was similar to those of Mariners 6 and 7; however, Mariner 9 had the additional flight operational requirement to perform in a Mars orbit environment mode. The array special tests provided information on the current-voltage characteristics and array space degradation. Tests indicated that total solar array current degradation was 3.5 percent, which could probably be attributed to the gradual degradation of the cover glass and/or the RTV 602 adhesive employed to cement the cover glass to the solar cell.

KSC-00pp1194

NASA Image and Video Library

2000-08-18

In the Space Station Processing Facility, Solar Array Wing-3, an element of the International Space Station, is lifted from a work stand to move it to the Integrated Electronic Assembly for testing. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1199

NASA Image and Video Library

2000-08-18

In the Space Station Processing Facility, Solar Array Wing-3, a component of the International Space Station, is installed in the Integrated Electronic Assembly where it will be tested. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1193

NASA Image and Video Library

2000-08-18

Workers in the Space Station Processing Facility get ready to move Solar Array Wing-3, a component of the International Space Station, for installation onto the Integrated Electronic Assembly. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1198

NASA Image and Video Library

2000-08-18

In the Space Station Processing Facility, Solar Array Wing-3, a component of the International Space Station, is installed in the Integrated Electronic Assembly where it will be tested. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1195

NASA Image and Video Library

2000-08-18

In the Space Station Processing Facility, Solar Array Wing-3 (at top), a component of the International Space Station, hovers above the Integrated Electronic Assembly where it will be installed for testing. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

The effect of atmospheric drag on the design of solar-cell power systems for low Earth orbit

NASA Technical Reports Server (NTRS)

Kyser, A. C.

1983-01-01

The feasibility of reducing the atmospheric drag of low orbit solar powered satellites by operating the solar-cell array in a minimum-drag attitude, rather than in the conventional Sun pointing attitude was determined. The weights of the solar array, the energy storage batteries, and the fuel required to overcome the drag of the solar array for a range of design life times in orbit were considered. The drag of the array was estimated by free molecule flow theory, and the system weights were calculated from unit weight estimates for 1990 technology. The trailing, minimum drag system was found to require 80% more solar array area, and 30% more battery capacity, the system weights for reasonable life times were dominated by the thruster fuel requirements.

KSC-00pp1210

NASA Image and Video Library

2000-08-30

Workers in the Space Station Processing Facility help guide an overhead crane toward a workstand containing a solar array in order to move it for installation onto the Integrated Equipment Assembly (IEA). A component of the International Space Station, the solar array is the second one being installed on the IEA. The arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1216

NASA Image and Video Library

2000-08-30

In the Space Station Processing Facility, the overhead crane carrying a solar array maneuvers its cargo into position on the Integrated Equipment Assembly on which it will be installed. Solar Array Wing-3 is already in place. Components of the International Space Station, the arrays are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

Feasibility study of a 200 watt per kilogram lightweight solar array system. [for interplanetary spacecraft

NASA Technical Reports Server (NTRS)

Stanhouse, R.; Cokonis, J.; Rayl, G.

1976-01-01

Progress in an investigation of the feasibility of designing a lightweight solar array with a power-to-weight ratio of 200 watts per kilogram is described. This solar array will produce 10,000 watts of electrical power at 1 A.U. at its beginning of life (BOL), and degrade less than 20% over a three year period in interplanetary flight. A review of existing lightweight solar array system concepts is presented along with discussion pertaining to their applicable technology as it relates to a 200 watt/kilogram array. Also presented is a discussion of the candidate development solar cells being considered, and various deployable boom concepts under investigation.

Using the sun analog sensor (SAS) data to investigate solar array yoke motion on the GOES-8 and -9 spacecraft

NASA Astrophysics Data System (ADS)

Phenneger, Milton; Knack, Jennifer L.

1996-10-01

The GOES-8 and -9 Sun analog sensor (SAS) flight data is analyzed to evaluate the attitude motion environment of payloads mounted on the solar array. The work was performed in part to extend analysis in progress to support the solar x-ray imager to be flown on the GOES-M. The SAS is a two axis sensor mounted on the x-ray sensor pointing (XRP) module to measure the east/west error angle between the SUn and the solar array normal and to provide a north south error angle for automatic solar pointing of the x-ray sensor by the XRP. The goal was to search for evidence of solar array vibrational modes in the 2 Hz and 0.5 Hz range and to test the predicted amplitudes. The results show that the solar array rotates at the rate of the mean Sun with unexpected oscillation periods of 5.6 minutes, 90 minutes, and 1440 minutes originating from the two 16.1 gear drive train stages between the solar array drive stepper motor and the solar array yoke. The higher frequency oscillations are detected as random noise at the 1/16 Hz telemetry sampling rate of the SAS. This supports the preflight predictions for the high frequency modes but provide s no detailed measurement of the frequency as expected for this data period. In addition to this the data indicates that the solar array is responding unexpectedly to GOES imager instrument blackbody calibration events.

Cost study of solar cell space power systems

NASA Technical Reports Server (NTRS)

Bernatowicz, D. T.

1972-01-01

Historical costs for solar cell space power systems were evaluated. The study covered thirteen missions that represented a broad cross section of flight projects over the past decade. Fully burdened costs in terms of 1971 dollars are presented for the system and the solar array. The costs correlate reasonably well with array area and do not increase in proportion to array area. The trends for array costs support the contention that solar cell and module standardization reduce costs.

Solar array maximum power tracking with closed-loop control of a 30-centimeter ion thruster

NASA Technical Reports Server (NTRS)

Gruber, R. P.

1977-01-01

A new solar array/ion thruster system control concept has been developed and demonstrated. An ion thruster beam load is used to automatically and continuously operate an unregulated solar array at its maximum power point independent of variations in solar array voltage and current. Preliminary tests were run which verified that this method of control can be implemented with a few, physically small, signal level components dissipating less than two watts.

Boeing's High Voltage Solar Tile Test Results

NASA Astrophysics Data System (ADS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-10-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Boeing's High Voltage Solar Tile Test Results

NASA Technical Reports Server (NTRS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-01-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Tandem concentrator photovoltaic array applied to Space Station Freedom evolutionary power requirements

NASA Technical Reports Server (NTRS)

Fisher, Edward M., Jr.

1991-01-01

Additional power is required to support Space Station Freedom (SSF) evolution. Boeing Defense and Space Group, LeRC, and Entech Corporation have participated in the development of efficiency gallium arsenide and gallium antimonide solar cells make up the solar array tandem cell stacks. Entech's Mini-Dome Fresnel Lens Concentrators focus solar energy onto the active area of the solar cells at 50 times one solar energy flux. Development testing for a flight array, to be launched in Nov. 1992 is under way with support from LeRC. The tandem cells, interconnect wiring, concentrator lenses, and structure were integrated into arrays subjected to environmental testing. A tandem concentrator array can provide high mass and area specific power and can provide equal power with significantly less array area and weight than the baseline array design. Alternatively, for SSF growth, an array of twice the baseline power can be designed which still has a smaller drag area than the baseline.

Evaluation of space station solar array technology

NASA Technical Reports Server (NTRS)

1972-01-01

The research concerning lightweight solar array assemblies since 1970 is reported. A bibliography of abstracts of documents used for reference during this period is included along with an evaluation of available solar array technology. A list of recommended technology programs is presented.

Hubble Space Telescope solar cell module thermal cycle test

NASA Technical Reports Server (NTRS)

Douglas, Alexander; Edge, Ted; Willowby, Douglas; Gerlach, Lothar

1992-01-01

The Hubble Space Telescope (HST) solar array consists of two identical double roll-out wings designed after the Hughes flexible roll-up solar array (FRUSA) and was developed by the European Space Agency (ESA) to meet specified HST power output requirements at the end of 2 years, with a functional lifetime of 5 years. The requirement that the HST solar array remain functional both mechanically and electrically during its 5-year lifetime meant that the array must withstand 30,000 low Earth orbit (LEO) thermal cycles between approximately +100 and -100 C. In order to evaluate the ability of the array to meet this requirement, an accelerated thermal cycle test in vacuum was conducted at NASA's Marshall Space Flight Center (MSFC), using two 128-cell solar array modules which duplicated the flight HST solar array. Several other tests were performed on the modules. The thermal cycle test was interrupted after 2,577 cycles, and a 'cold-roll' test was performed on one of the modules in order to evaluate the ability of the flight array to survive an emergency deployment during the dark (cold) portion of an orbit. A posttest static shadow test was performed on one of the modules in order to analyze temperature gradients across the module. Finally, current in-flight electrical performance data from the actual HST flight solar array will be tested.

Optically interconnected phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Kunath, Richard R.

1988-01-01

Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed.

Design and optimization of a high-efficiency array generator in the mid-IR with binary subwavelength grooves.

PubMed

Bloom, Guillaume; Larat, Christian; Lallier, Eric; Lee-Bouhours, Mane-Si Laure; Loiseaux, Brigitte; Huignard, Jean-Pierre

2011-02-10

We have designed a high-efficiency array generator composed of subwavelength grooves etched in a GaAs substrate for operation at 4.5 μm. The method used combines rigorous coupled wave analysis with an optimization algorithm. The optimized beam splitter has both a high efficiency (∼96%) and a good intensity uniformity (∼0.2%). The fabrication error tolerances are numerically calculated, and it is shown that this subwavelength array generator could be fabricated with current electron beam writers and inductively coupled plasma etching. Finally, we studied the effect of a simple and realistic antireflection coating on the performance of the beam splitter.

Solar Cell and Array Technology Development for NASA Solar Electric Propulsion Missions

NASA Technical Reports Server (NTRS)

Piszczor, Michael; McNatt, Jeremiah; Mercer, Carolyn; Kerslake, Tom; Pappa, Richard

2012-01-01

NASA is currently developing advanced solar cell and solar array technologies to support future exploration activities. These advanced photovoltaic technology development efforts are needed to enable very large (multi-hundred kilowatt) power systems that must be compatible with solar electric propulsion (SEP) missions. The technology being developed must address a wide variety of requirements and cover the necessary advances in solar cell, blanket integration, and large solar array structures that are needed for this class of missions. Th is paper will summarize NASA's plans for high power SEP missions, initi al mission studies and power system requirements, plans for advanced photovoltaic technology development, and the status of specific cell and array technology development and testing that have already been conducted.

Extremely Black Vertically Aligned Carbon Nanotube Arrays for Solar Steam Generation.

PubMed

Yin, Zhe; Wang, Huimin; Jian, Muqiang; Li, Yanshen; Xia, Kailun; Zhang, Mingchao; Wang, Chunya; Wang, Qi; Ma, Ming; Zheng, Quan-Shui; Zhang, Yingying

2017-08-30

The unique structure of a vertically aligned carbon nanotube (VACNT) array makes it behave most similarly to a blackbody. It is reported that the optical absorptivity of an extremely black VACNT array is about 0.98-0.99 over a large spectral range of 200 nm-200 μm, inspiring us to explore the performance of VACNT arrays in solar energy harvesting. In this work, we report the highly efficient steam generation simply by laminating a layer of VACNT array on the surface of water to harvest solar energy. It is found that under solar illumination the temperature of upper water can significantly increase with obvious water steam generated, indicating the efficient solar energy harvesting and local temperature rise by the thin layer of VACNTs. We found that the evaporation rate of water assisted by VACNT arrays is 10 times that of bare water, which is the highest ratio for solar-thermal-steam generation ever reported. Remarkably, the solar thermal conversion efficiency reached 90%. The excellent performance could be ascribed to the strong optical absorption and local temperature rise induced by the VACNT layer, as well as the ultrafast water transport through the VACNT layer due to the frictionless wall of CNTs. Based on the above, we further demonstrated the application of VACNT arrays in solar-driven desalination.

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

NASA Technical Reports Server (NTRS)

Rhee, S. S.; Jones, G. T.; Allison, K. L.

1978-01-01

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Interaction of a solar array with an ion thruster due to the charge-exchange plasma

NASA Technical Reports Server (NTRS)

Kaufman, H. R.

1976-01-01

The generation of a charge exchange plasma by a thruster, the transport of this plasma to the solar array, and the interaction of the solar array with the plasma after it arrives are all described. The generation of this plasma is described accurately from thruster geometry and operating conditions. The transport of the charge exchange plasma was studied experimentally with a 15 cm thruster. A model was developed for simple thruster array configurations. A variety of experiments were surveyed for the interaction of the plasma at the solar array.

Thin-Film Solar Array Earth Orbit Mission Applicability Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Raffaelle, Ryne P.

2002-01-01

This is a preliminary assessment of the applicability and spacecraft-level impact of using very lightweight thin-film solar arrays with relatively large deployed areas for representative Earth orbiting missions. The most and least attractive features of thin-film solar arrays are briefly discussed. A simple calculation is then presented illustrating that from a solar array alone mass perspective, larger arrays with less efficient but lighter thin-film solar cells can weigh less than smaller arrays with more efficient but heavier crystalline cells. However, a proper spacecraft-level systems assessment must take into account the additional mass associated with solar array deployed area: the propellant needed to desaturate the momentum accumulated from area-related disturbance torques and to perform aerodynamic drag makeup reboost. The results for such an assessment are presented for a representative low Earth orbit (LEO) mission, as a function of altitude and mission life, and a geostationary Earth orbit (GEO) mission. Discussion of the results includes a list of specific mission types most likely to benefit from using thin-film arrays. NASA Glenn's low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is also briefly discussed to provide a perspective on one approach to achieving this enabling technology. The paper concludes with a list of issues to be addressed prior to use of thin-film solar arrays in space and the observation that with their unique characteristics, very lightweight arrays using efficient, thin-film cells on flexible substrates may become the best array option for a subset of Earth orbiting missions.

Plasma Interactions with High Voltage Solar Arrays for a Direct Drive Hall Effect Thruster System

NASA Technical Reports Server (NTRS)

Schneider, T.; Horvater, M. A.; Vaughn, J.; Carruth, M. R.; Jongeward, G. A.; Mikellides, I. G.

2003-01-01

The Environmental Effects Group of NASA s Marshall Space Flight Center (MSFC) is conducting research into the effects of plasma interaction with high voltage solar arrays. These high voltage solar arrays are being developed for a direct drive Hall Effect Thruster propulsion system. A direct drive system configuration will reduce power system mass by eliminating a conventional power-processing unit. The Environmental Effects Group has configured two large vacuum chambers to test different high-voltage array concepts in a plasma environment. Three types of solar arrays have so far been tested, an International Space Station (ISS) planar array, a Tecstar planar array, and a Tecstar solar concentrator array. The plasma environment was generated using a hollow cathode plasma source, which yielded densities between 10(exp 6) - 10(exp 7) per cubic centimeter and electron temperatures of 0.5-1 eV. Each array was positioned in this plasma and biased in the -500 to + 500 volt range. The current collection was monitored continuously. In addition, the characteristics of arcing, snap over, and other features, were recorded. Analysis of the array performance indicates a time dependence associated with the current collection as well as a tendency for "conditioning" over a large number of runs. Mitigation strategies, to reduce parasitic current collection, as well as arcing, include changing cover-glass geometry and layout as well as shielding the solar cell edges. High voltage performance data for each of the solar array types tested will be presented. In addition, data will be provided to indicate the effectiveness of the mitigation techniques.

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Study of solar array switching power management technology for space power system

NASA Technical Reports Server (NTRS)

Cassinelli, J. E.

1982-01-01

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts were identified that could safisfy the mission requirements. These switching concepts were compared with a conventional buck regulator system on the basis of cost, weight and volume, reliability, efficiency and thermal control. For the missions reviewed, solar array switching provided significant advantages in all areas of comparison.

Preliminary space station solar array structural design study

NASA Technical Reports Server (NTRS)

Dorsey, J. T.; Bush, H. G.; Mikulas, M. M., Jr.

1984-01-01

Structurally efficient ways to support the large solar arrays (3,716 square meters which are currently considered for space station use) are examined. An erectable truss concept is presented for the on orbit construction of winged solar arrays. The means for future growth, maintenance, and repair are integrally designed into this concept. Results from parametric studies, which highlight the physical and structural differences between various configuration options are presented. Consideration is given to both solar blanket and hard panel arrays.

Preliminary space station solar array structural design study

NASA Astrophysics Data System (ADS)

Dorsey, J. T.; Bush, H. G.; Mikulas, M. M., Jr.

Structurally efficient ways to support the large solar arrays (3,716 square meters which are currently considered for space station use) are examined. An erectable truss concept is presented for the on orbit construction of winged solar arrays. The means for future growth, maintenance, and repair are integrally designed into this concept. Results from parametric studies, which highlight the physical and structural differences between various configuration options are presented. Consideration is given to both solar blanket and hard panel arrays.

Study of solar array switching power management technology for space power system

NASA Technical Reports Server (NTRS)

Cassinelli, J. E.

1982-01-01

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts which could satisfy the mission requirements were identified. The switching concepts were compared with a conventional buck regulator system for cost, weight and volume, reliability, efficiency and thermal control. Solar array switching provided significant advantages in all areas of comparison for the reviewed missions.

Development of the solar array deployment and drive system for the XTE spacecraft

NASA Technical Reports Server (NTRS)

Farley, Rodger; Ngo, Son

1995-01-01

The X-ray Timing Explorer (XTE) spacecraft is a NASA science low-earth orbit explorer-class satellite to be launched in 1995, and is an in-house Goddard Space Flight Center (GSFC) project. It has two deployable aluminum honeycomb solar array wings with each wing being articulated by a single axis solar array drive assembly. This paper will address the design, the qualification testing, and the development problems as they surfaced of the Solar Array Deployment and Drive System.

KSC-00pp1196

NASA Image and Video Library

2000-08-18

Workers in the Space Station Processing Facility watch closely as Solar Array Wing-3, a component of the International Space Station, is lowered toward the Integrated Electronic Assembly where it will be installed for testing. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1209

NASA Image and Video Library

2000-08-30

Workers in the Space Station Processing Facility prepare an overhead crane they will use to move a solar array, a component of the International Space Station, for installation onto the Integrated Equipment Assembly. The solar array is the second one being installed. They are scheduled to be launched on mission STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

KSC-00pp1197

NASA Image and Video Library

2000-08-18

Workers in the Space Station Processing Facility watch closely as Solar Array Wing-3, a component of the International Space Station, is moved toward the Integrated Electronic Assembly where it will be installed for testing. The solar array is scheduled to be launched on STS-97 in late November along with the P6 truss. The Station’s electrical power system (EPS) will use eight photovoltaic solar arrays to convert sunlight to electricity. Each of the eight solar arrays will be 112 feet long by 39 feet wide. The solar arrays are mounted on a “blanket” that can be folded like an accordion for delivery. Once in orbit, astronauts will deploy the blankets to their full size. Gimbals will be used to rotate the arrays so that they will face the Sun to provide maximum power to the Space Station

Thermal cycle testing of Space Station Freedom solar array blanket coupons

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Schieman, David A.

1991-01-01

Lewis Research Center is presently conducting thermal cycle testing of solar array blanket coupons that represent the baseline design for Space Station Freedom. Four coupons were fabricated as part of the Photovoltaic Array Environment Protection (PAEP) Program, NAS 3-25079, at Lockheed Missile and Space Company. The objective of the testing is to demonstrate the durability or operational lifetime of the solar array welded interconnect design within the durability or operational lifetime of the solar array welded interconnect design within a low earth orbit (LEO) thermal cycling environment. Secondary objectives include the observation and identification of potential failure modes and effects that may occur within the solar array blanket coupons as a result of thermal cycling. The objectives, test articles, test chamber, performance evaluation, test requirements, and test results are presented for the successful completion of 60,000 thermal cycles.

Phase-Locked Semiconductor Quantum Well Laser Arrays.

DTIC Science & Technology

1987-03-01

heated monocrystalline substrate. 149 APPENDIX B. A TECHNOLOGICAL APPENDIX 150 The general topic of molecular beam epitaxy (MBE) of compound semi...APPENDIX B. A TECHNOLOGICAL APPENDIX 151 - MONOCRYSTALLINE GaAs SUBSTRATE MOLECULAR / BEAMS...for 30 minutes at 300 C. During this time, the growth chamber cryo- panel is cooled with liquid nitrogen and the sources in the effusion cells are

History of Hubble Space Telescope (HST)

NASA Image and Video Library

1985-01-01

This is a view of a solar cell blanket deployed on a water table during the Solar Array deployment test. The Hubble Space Telescope (HST) Solar Arrays provide power to the spacecraft. The arrays are mounted on opposite sides of the HST, on the forward shell of the Support Systems Module. Each array stands on a 4-foot mast that supports a retractable wing of solar panels 40-feet (12.1-meters) long and 8.2-feet (2.5-meters) wide, in full extension. The arrays rotate so that the solar cells face the Sun as much as possible to harness the Sun's energy. The Space Telescope Operations Control Center at the Goddard Space Center operates the array, extending the panels and maneuvering the spacecraft to focus maximum sunlight on the arrays. The purpose of the HST, the most complex and sensitive optical telescope ever made, is to study the cosmos from a low-Earth orbit. By placing the telescope in space, astronomers are able to collect data that is free of the Earth's atmosphere. The HST Solar Array was designed by the European Space Agency and built by British Aerospace. The Marshall Space Flight Center had overall responsibility for design, development, and construction of the HST.

SPS silicon reference system

NASA Technical Reports Server (NTRS)

Woodcock, G. R.

1980-01-01

The design analysis of a silicon power conversion system for the solar power satellite (SPS) is summarized. The solar array, consisting of glass encapsulated 50 micrometer silicon solar cells, is described. The general scheme for power distribution to the array/antenna interface is described. Degradation by proton irradiation is considered. The interface between the solar array and the klystron equipped power transmitter is described.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Comparison of candidate solar array maximum power utilization approaches. [for spacecraft propulsion

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Lindena, S.

1976-01-01

A study was made of five potential approaches that can be utilized to detect the maximum power point of a solar array while sustaining operations at or near maximum power and without endangering stability or causing array voltage collapse. The approaches studied included: (1) dynamic impedance comparator, (2) reference array measurement, (3) onset of solar array voltage collapse detection, (4) parallel tracker, and (5) direct measurement. The study analyzed the feasibility and adaptability of these approaches to a future solar electric propulsion (SEP) mission, and, specifically, to a comet rendezvous mission. Such missions presented the most challenging requirements to a spacecraft power subsystem in terms of power management over large solar intensity ranges of 1.0 to 3.5 AU. The dynamic impedance approach was found to have the highest figure of merit, and the reference array approach followed closely behind. The results are applicable to terrestrial solar power systems as well as to other than SEP space missions.

A Practical Guide To Solar Array Simulation And PCDU Test

NASA Astrophysics Data System (ADS)

Schmitz, Noah; Carroll, Greg; Clegg, Russell

2011-10-01

Solar arrays consisting of multiple photovoltaic segments provide power to satellites and charge internal batteries for use during eclipse. Solar arrays have unique I-V characteristics and output power which vary with environmental and operational conditions such as temperature, irradiance, spin, and eclipse. Therefore, specialty power solutions are needed to properly test the satellite on the ground, especially the Power Control and Distribution Unit (PCDU) and the Array Power Regulator (APR.) This paper explores some practical and theoretical considerations that should be taken into account when choosing a commercial, off-the-shelf solar array simulator (SAS) for verification of the satellite PCDU. An SAS is a unique power supply with I-V output characteristics that emulate the solar arrays used to power a satellite. It is important to think about the strengths and the limitations of this emulation capability, how closely the SAS approximates a real solar panel, and how best to design a system using SAS as components.

Image processing using Gallium Arsenide (GaAs) technology

NASA Technical Reports Server (NTRS)

Miller, Warner H.

1989-01-01

The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Methods of improving the efficiency of photovoltaic cells. [including X ray analysis

NASA Technical Reports Server (NTRS)

Loferski, J. J.; Roessler, B.; Crisman, E. E.; Chen, L. Y.; Kaul, R.

1974-01-01

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Japan's participation in space station design: Feasibility study of GaAs solar cells for space station applications

NASA Technical Reports Server (NTRS)

1986-01-01

The report gives the results of feasibility studies and a cost analysis done on GaAs solar battery cells for space stations. The studies and their results are as follows: (1) Cell size - The 2 x 4 cm cell size was found superior to the 4 x 4 cm cell; (2) Manufacturing technology - Overall, LPE crystal growth was found more suitable than MO-CVD. Current technology for post-growth processes and applying large-area cover glass can be used with few or no modifications; (3) Cell assemblies - Tests for mechanical and thermal stresses encountered from assembly through operation are recommended; (4) Procuring materials - Steps should be taken to avoid sharp price increases due to a speculative gallium market. There are no problems with arsenic materials; (5) Production facilities - The capital investment needed remains to be determined, but a working area of 4000 m2 will be required; (6) Cell costs to be determined; (7) Cell development-supply plan - Two-year lead time will be needed to develop the necessary technology and prepare for production.

Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de

2016-07-18

We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and opticallymore » injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.« less

Plasma chamber testing of advanced photovoltaic solar array coupons

NASA Technical Reports Server (NTRS)

Hillard, G. Barry

1994-01-01

The solar array module plasma interactions experiment is a space shuttle experiment designed to investigate and quantify the high voltage plasma interactions. One of the objectives of the experiment is to test the performance of the Advanced Photovoltaic Solar Array (APSA). The material properties of array blanket are also studied as electric insulators for APSA arrays in high voltage conditions. Three twelve cell prototype coupons of silicon cells were constructed and tested in a space simulation chamber.

The 7.5 kW solar array simulator

NASA Technical Reports Server (NTRS)

Robson, R. R.

1975-01-01

A high power solar array simulator capable of providing the input power to simultaneously operate two 30 cm diameter ion thruster power processors was designed, fabricated, and tested. The maximum power point is set to between 150 and 7500 watts representing an open circuit voltage from 50 to 300 volts and a short circuit current from 4 to 36 amps. Illuminated solar cells are used as the control element to provide a true solar cell characteristic and permit the option of simulating changes in this characteristic due to variations in solar intensity and/or temperature of the solar array. This is accomplished by changing the illumination and/or temperature of the control cells. The response of the output to a step change in load closely approximates that of an actual solar array.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Oshima, Ryuji; France, Ryan

To advance the state-of-the-art in III-V multijunction solar cells towards high concentration efficiencies approaching 50%, development of a high-quality ~1.7 eV second junction solar cell is of key interest for integration in five or more junction devices. Quaternary GalnAsP solar cells grown lattice-matched on GaAs allows bandgap tunability in the range from 1.42 to 1.92 eV and offers an attractive Al-free alternative to conventional AlGaAs solar cells. In this work, we investigate the role of growth temperature towards understanding the optimal growth window for realizing high-quality GalnAsP alloys. We demonstrate bandgap tunability from 1.6 to 1.8 eV in GalnAsP alloysmore » for compositions close to the miscibility gap, while still maintaining lattice-matched condition to GaAs. We perform an in-depth investigation to understand the impact of varying base thickness and doping concentration on the carrier collection and performance of these 1.7 eV GalnAsP solar cells. The photo-response of these cells is found to be very sensitive to p-type zinc dopant incorporation in the base layer. We demonstrate prototype 1.7 eV GalnAsP solar cell designs that leverage enhanced depletion width as an effective method to overcome this issue and boost long-wavelength carrier collection. Short-circuit current density (JSC) measured in field-aided devices were as high as 17.25 m A/cm2. The best GalnAsP solar cell in this study achieved an efficiency of 17.2% with a JSC of 17 m A/cm2 and a fill-factor of 86.4%. The corresponding open-circuit voltage (VOC) 1.7 eV measured on this cell represents the highest Voc reported for a 1.7 eV GalnAsP solar cell. These initial cell results are encouraging and highlight the potential of Al-free GalnAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less

By-Pass Diode Temperature Tests of a Solar Array Coupon under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

By-Pass diodes are a key design feature of solar arrays and system design must be robust against local heating, especially with implementation of larger solar cells. By-Pass diode testing was performed to aid thermal model development for use in future array designs that utilize larger cell sizes that result in higher string currents. Testing was performed on a 56-cell Advanced Triple Junction solar array coupon provided by SSL. Test conditions were vacuum with cold array backside using discrete by-pass diode current steps of 0.25 A ranging from 0 A to 2.0 A.

Development of an Ultraflex-Based Thin Film Solar Array for Space Applications

NASA Technical Reports Server (NTRS)

White, Steve; Douglas, Mark; Spence, Brian; Jones, P. Alan; Piszczor, Michael F.

2003-01-01

As flexible thin film photovoltaic (FTFPV) cell technology is developed for space applications, integration into a viable solar array structure that optimizes the attributes of this cell technology is critical. An advanced version of ABLE'sS UltraFlex solar array platform represents a near-term, low-risk approach to demonstrating outstanding array performance with the implementation of FTFPV technology. Recent studies indicate that an advanced UltraFlex solar array populated with 15% efficient thin film cells can achieve over 200 W/kg EOL. An overview on the status of hardware development and the future potential of this technology is presented.

Hubble Space telescope thermal cycle test report for large solar array samples with BSFR cells (Sample numbers 703 and 704)

NASA Technical Reports Server (NTRS)

Alexander, D. W.

1992-01-01

The Hubble space telescope (HST) solar array was designed to meet specific output power requirements after 2 years in low-Earth orbit, and to remain operational for 5 years. The array, therefore, had to withstand 30,000 thermal cycles between approximately +100 and -100 C. The ability of the array to meet this requirement was evaluated by thermal cycle testing, in vacuum, two 128-cell solar cell modules that exactly duplicated the flight HST solar array design. Also, the ability of the flight array to survive an emergency deployment during the dark (cold) portion of an orbit was evaluated by performing a cold-roll test using one module.

Space Station Freedom solar array containment box mechanisms

NASA Technical Reports Server (NTRS)

Johnson, Mark E.; Haugen, Bert; Anderson, Grant

1994-01-01

Space Station Freedom will feature six large solar arrays, called solar array wings, built by Lockheed Missiles & Space Company under contract to Rockwell International, Rocketdyne Division. Solar cells are mounted on flexible substrate panels which are hinged together to form a 'blanket.' Each wing is comprised of two blankets supported by a central mast, producing approximately 32 kW of power at beginning-of-life. During launch, the blankets are fan-folded and compressed to 1.5 percent of their deployed length into containment boxes. This paper describes the main containment box mechanisms designed to protect, deploy, and retract the solar array blankets: the latch, blanket restraint, tension, and guidewire mechanisms.

High voltage solar cell power generating system for regulated solar array development

NASA Technical Reports Server (NTRS)

Levy, E., Jr.; Hoffman, A. C.

1973-01-01

A laboratory solar power system regulated by on-panel switches has been delivered for operating high power (3 kw), high voltage (15,000 volt) loads (communication tubes, ion thrusters). The modular system consists of 26 solar arrays, each with an integral light source and cooling system. A typical array contains 2560 series-connected cells. Each light source consists of twenty 500 watt tungsten iodide lamps providing plus or minus 5 per cent uniformity at one solar constant. An array temperature of less than 40 C is achieved using an infrared filter, a water cooled plate, a vacuum hold-down system, and air flushing.

Stretched Lens Array Photovoltaic Concentrator Technology Developed

NASA Technical Reports Server (NTRS)

Piszczor, Michael F., Jr.; O'Neill, Mark J.

2004-01-01

Solar arrays have been and continue to be the mainstay in providing power to nearly all commercial and government spacecraft. Light from the Sun is directly converted into electrical energy using solar cells. One way to reduce the cost of future space power systems is by minimizing the size and number of expensive solar cells by focusing the sunlight onto smaller cells using concentrator optics. The stretched lens array (SLA) is a unique concept that uses arched Fresnel lens concentrators to focus sunlight onto a line of high-efficiency solar cells located directly beneath. The SLA concept is based on the Solar Concentrator Array with Refractive Linear Element Technology (SCARLET) design that was used on NASA's New Millennium Deep Space 1 mission. The highly successful asteroid/comet rendezvous mission (1998 to 2001) demonstrated the performance and long-term durability of the SCARLET/SLA solar array design and set the foundation for further improvements to optimize its performance.

Early commercial demonstration of space solar power using ultra-lightweight arrays

NASA Astrophysics Data System (ADS)

Reed, Kevin; Willenberg, Harvey J.

2009-11-01

Space solar power shows great promise for future energy sources worldwide. Most central power stations operate with power capacity of 1000 MW or greater. Due to launch size limitations and specific power of current, rigid solar arrays, the largest solar arrays that have flown in space are around 50 kW. Thin-film arrays offer the promise of much higher specific power and deployment of array sizes up to several MW with current launch vehicles. An approach to early commercial applications for space solar power to distribute power to charge hand-held, mobile battery systems by wireless power transmission (WPT) from thin-film solar arrays in quasi-stationary orbits will be presented. Four key elements to this prototype will be discussed: (1) Space and near-space testing of prototype wireless power transmission by laser and microwave components including WPT space to space and WPT space to near-space HAA transmission demonstrations; (2) distributed power source for recharging hand-held batteries by wireless power transmission from MW space solar power systems; (3) use of quasi-geostationary satellites to generate electricity and distribute it to targeted areas; and (4) architecture and technology for ultra-lightweight thin-film solar arrays with specific energy exceeding 1 kW/kg. This approach would yield flight demonstration of space solar power and wireless power transmission of 1.2 MW. This prototype system will be described, and a roadmap will be presented that will lead to still higher power levels.

Semiconductor electrolyte photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

APSA - A new generation of photovoltaic solar arrays

NASA Technical Reports Server (NTRS)

Stella, P. M.; Kurland, R. M.

1989-01-01

This paper provides details on the Advanced Photovoltaic Solar Array (APSA) wing design, fabrication, and testing. The impact of array size change on performance and mechanical characteristics is discussed. Projections for future performance enhancements that may be expected through the use of advanced solar cells presently under development are examined.

LSSA (Low-cost Silicon Solar Array) project

NASA Technical Reports Server (NTRS)

1976-01-01

The Photovoltaic Conversion Program was established to find methods of economically generating enough electrical power to meet future requirements. Activities and progress in the following areas are discussed: silicon-refinement processes; silicon-sheet-growth techniques; encapsulants; manufacturing of off-the-shelf solar arrays; and procurement of semistandardized solar arrays.

Cost study of solar cell space power systems.

NASA Technical Reports Server (NTRS)

Bernatowicz, D. T.

1972-01-01

A study of historical costs for solar cell space power systems was made by a NASA ad hoc study group. The study covered thirteen missions that represented a broad cross-section of flight projects over the past decade. Fully burdened costs in terms of 1971 dollars are presented for the system and the solar array. The costs correlate reasonably well with array area and do not increase in proportion to array area. The trends for array costs support the contention that solar cell and module standardization would reduce costs.

Study of Power Options for Jupiter and Outer Planet Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Fincannon, James

2015-01-01

Power for missions to Jupiter and beyond presents a challenging goal for photovoltaic power systems, but NASA missions including Juno and the upcoming Europa Clipper mission have shown that it is possible to operate solar arrays at Jupiter. This work analyzes photovoltaic technologies for use in Jupiter and outer planet missions, including both conventional arrays, as well as analyzing the advantages of advanced solar cells, concentrator arrays, and thin film technologies. Index Terms - space exploration, spacecraft solar arrays, solar electric propulsion, photovoltaic cells, concentrator, Fresnel lens, Jupiter missions, outer planets.

Large area pulsed solar simulator

NASA Technical Reports Server (NTRS)

Kruer, Mark A. (Inventor)

1999-01-01

An advanced solar simulator illuminates the surface a very large solar array, such as one twenty feet by twenty feet in area, from a distance of about twenty-six feet with an essentially uniform intensity field of pulsed light of an intensity of one AMO, enabling the solar array to be efficiently tested with light that emulates the sun. Light modifiers sculpt a portion of the light generated by an electrically powered high power Xenon lamp and together with direct light from the lamp provide uniform intensity illumination throughout the solar array, compensating for the square law and cosine law reduction in direct light intensity, particularly at the corner locations of the array. At any location within the array the sum of the direct light and reflected light is essentially constant.

Spacecraft Charging Current Balance Model Applied to High Voltage Solar Array Operations

NASA Technical Reports Server (NTRS)

Willis, Emily M.; Pour, Maria Z. A.

2016-01-01

Spacecraft charging induced by high voltage solar arrays can result in power losses and degradation of spacecraft surfaces. In some cases, it can even present safety issues for astronauts performing extravehicular activities. An understanding of the dominant processes contributing to spacecraft charging induced by solar arrays is important to current space missions, such as the International Space Station, and to any future space missions that may employ high voltage solar arrays. A common method of analyzing the factors contributing to spacecraft charging is the current balance model. Current balance models are based on the simple idea that the spacecraft will float to a potential such that the current collecting to the surfaces equals the current lost from the surfaces. However, when solar arrays are involved, these currents are dependent on so many factors that the equation becomes quite complicated. In order for a current balance model to be applied to solar array operations, it must incorporate the time dependent nature of the charging of dielectric surfaces in the vicinity of conductors1-3. This poster will present the factors which must be considered when developing a current balance model for high voltage solar array operations and will compare results of a current balance model with data from the Floating Potential Measurement Unit4 on board the International Space Station.

The Impact of Solar Arrays on Arid Soil Hydrology: Some Numerical Simulations

NASA Astrophysics Data System (ADS)

Luo, Y.; Berli, M.; Koonce, J.; Shillito, R.; Dijkema, J.; Ghezzehei, T. A.; Yu, Z.

2016-12-01

Hot deserts are prime locations for solar energy generation but also recognized as particularly fragile environments. Minimizing the impact of facility-scale solar installations on desert environments is therefore of increasing concern. This study focuses on the impact of photovoltaic solar arrays on the water balance of arid soil underneath the array. The goal was to explore whether concentrated rainwater infiltration along the solar panel drip lines would lead to deeper infiltration and an increase in soil water storage in the long term. A two-dimensional HYDRUS model was developed to simulate rainwater infiltration into the soil within a photovoltaic solar array. Results indicate that rainwater infiltrates deeper below the drip lines compared to the areas between solar panels but only for coarse textured soil. Finer-textured soils redistribute soil moisture horizontally and the concentrating effect of solar panels on rainwater infiltration appears to be small.

Definition study for photovoltaic residential prototype system

NASA Technical Reports Server (NTRS)

Imamura, M. S.; Hulstrom, R. L.; Cookson, C.; Waldman, B. H.; Lane, R. A.

1976-01-01

A parametric sensitivity study and definition of the conceptual design is presented. A computer program containing the solar irradiance, solar array, and energy balance models was developed to determine the sensitivities of solar insolation and the corresponding solar array output at five sites selected for this study as well as the performance of several solar array/battery systems. A baseline electrical configuration was chosen, and three design options were recommended. The study indicates that the most sensitive parameters are the solar insolation and the inverter efficiency. The baseline PST selected is comprised of a 133 sg m solar array, 250 ampere hour battery, one to three inverters, and a full shunt regulator to limit the upper solar array voltage. A minicomputer controlled system is recommended to provide the overall control, display, and data acquisition requirements. Architectural renderings of two photovoltaic residential concepts, one above ground and the other underground, are presented. The institutional problems were defined in the areas of legal liabilities during and after installation of the PST, labor practices, building restrictions and architectural guides, and land use.

Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2017-09-01

The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

ISS Solar Array Management

NASA Technical Reports Server (NTRS)

Williams, James P.; Martin, Keith D.; Thomas, Justin R.; Caro, Samuel

2010-01-01

The International Space Station (ISS) Solar Array Management (SAM) software toolset provides the capabilities necessary to operate a spacecraft with complex solar array constraints. It monitors spacecraft telemetry and provides interpretations of solar array constraint data in an intuitive manner. The toolset provides extensive situational awareness to ensure mission success by analyzing power generation needs, array motion constraints, and structural loading situations. The software suite consists of several components including samCS (constraint set selector), samShadyTimers (array shadowing timers), samWin (visualization GUI), samLock (array motion constraint computation), and samJet (attitude control system configuration selector). It provides high availability and uptime for extended and continuous mission support. It is able to support two-degrees-of-freedom (DOF) array positioning and supports up to ten simultaneous constraints with intuitive 1D and 2D decision support visualizations of constraint data. Display synchronization is enabled across a networked control center and multiple methods for constraint data interpolation are supported. Use of this software toolset increases flight safety, reduces mission support effort, optimizes solar array operation for achieving mission goals, and has run for weeks at a time without issues. The SAM toolset is currently used in ISS real-time mission operations.

Silicon solar photovoltaic power stations

NASA Technical Reports Server (NTRS)

Chowaniec, C. R.; Ferber, R. R.; Pittman, P. F.; Marshall, B. W.

1977-01-01

Modular design of components and arrays, cost estimates for modules and support structures, and cost/performance analysis of a central solar photovoltaic power plant are discussed. Costs of collector/reflector arrays are judged the dominant element in the total capital investment. High-concentration solar tracking arrays are recommended as the most economic means for producing solar photovoltaic energy when solar cells costs are high ($500 per kW generated). Capital costs for power conditioning subsystem components are itemized and system busbar energy costs are discussed at length.

Process of making solar cell module

DOEpatents

Packer, M.; Coyle, P.J.

1981-03-09

A process is presented for the manufacture of solar cell modules. A solution comprising a highly plasticized polyvinyl butyral is applied to a solar cell array. The coated array is dried and sandwiched between at last two sheets of polyvinyl butyral and at least two sheets of a rigid transparent member. The sandwich is laminated by the application of heat and pressure to cause fusion and bonding of the solar cell array with the rigid transparent members to produce a solar cell module.

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Francis, Robert W.

1987-01-01

Thermal stress cycling was performed on gallium arsenide solar cells to investigate their electrical, mechanical, and structural integrity. Cells were cycled under low Earth orbit (LEO) simulated temperature conditions in vacuum. Cell evaluations consisted of power output values, spectral response, optical microscopy and ion microprobe mass analysis, and depth profiles on both front surface inter-grid areas and metallization contact grid lines. Cells were examined for degradation after 500, 5,000, 10,000 and 15,245 thermal cycles. No indication of performance degradation was found for any vendor's cell lot.

Satellite Power Systems (SPS) concept definition study exhibit C. Volume 3: Experimental verification definition

NASA Technical Reports Server (NTRS)

1979-01-01

An environmentally oriented microwave technology exploratory research program aimed at reducing the uncertainty associated with microwave power system critical technical issues is described. Topics discussed include: (1) Solar Power Satellite System (SPS) development plan elements; (2) critical technology issues related to the SPS preliminary reference configuration; (3) pilot plant to demonstrate commercial viability of the SPS system; and (4) research areas required to demonstrate feasibility of the SPS system. Progress in the development of advanced GaAs solar cells is reported along with a power distribution subsystem.

Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.

NASA Technical Reports Server (NTRS)

Faur, Maria; Faur, Mircea; Jenkins, Philip P.; Goradia, Manju; Wilt, David M.

1994-01-01

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

Nonlinear response of GaAs gratings in the extraordinary transmission regime.

PubMed

Vincenti, Maria Antonietta; de Ceglia, Domenico; Scalora, Michael

2011-12-01

We theoretically describe a way to enhance harmonic generation from subwavelength slits milled on semiconductor substrates in strongly absorptive regimes. The metal-like response typical of semiconductors, like GaAs and GaP, triggers enhanced transmission and nonlinear optical phenomena in the deep UV range. We numerically study correlations between linear and nonlinear responses and their intricacies in infinite arrays, and highlight differences between nonlinear surface and magnetic sources, and intrinsic χ((2)) and χ((3)) contributions to harmonic generation. The results show promising efficiencies at wavelengths below 120 nm, and reveal coupling of TE and TM polarizations for pump and harmonic signals. A downconversion process that can regenerate pump photons with polarization orthogonal to the incident pump is also discussed. © 2011 Optical Society of America