Nuclear reactor spacer grid and ductless core component

DOEpatents

Christiansen, David W.; Karnesky, Richard A.

1989-01-01

The invention relates to a nuclear reactor spacer grid member for use in a liquid cooled nuclear reactor and to a ductless core component employing a plurality of these spacer grid members. The spacer grid member is of the egg-shell type and is constructed so that the walls of the cell members of the grid member are formed of a single thickness of metal to avoid tolerance problems. Within each cell member is a hydraulic spring which laterally constrains the nuclear material bearing rod which passes through each cell member against a hardstop in response to coolant flow through the cell member. This hydraulic spring is also suitable for use in a water cooled nuclear reactor. A core component constructed of, among other components, a plurality of these spacer grid members, avoids the use of a full length duct by providing spacer sleeves about the sodium tubes passing through the spacer grid members at locations between the grid members, thereby maintaining a predetermined space between adjacent grid members.

Supernormal hardness increase of dilute Ga(As, N) thin films

NASA Astrophysics Data System (ADS)

Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

2017-03-01

Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

1982-01-01

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

Photon counting microstrip X-ray detectors with GaAs sensors

NASA Astrophysics Data System (ADS)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Wafer-Fused Orientation-Patterned GaAs

DTIC Science & Technology

2008-02-13

frequencies utilizing existing industrial foundries. 15. SUBJECT TERMS Orientation-patterned Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase... Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase-matching, nonlinear frequency conversion 1. INTRODUCTION Quasi-phase-matching (QPM)1...and E. Lallier, “Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanoto, H.; Loke, W. K.; Yoon, S. F.

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

Effect of spacer layer on the magnetization dynamics of permalloy/rare-earth/permalloy trilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Chen, E-mail: ronanluochen@gmail.com; Yin, Yuli; Zhang, Dong

2015-05-07

The permalloy/rare-earth/permalloy trilayers with different types (Gd and Nd) and thicknesses of spacer layer are investigated using frequency dependence of ferromagnetic resonance (FMR) measurements at room temperature, which shows different behaviors with different rare earth spacer layers. By fitting the frequency dependence of the FMR resonance field and linewidth, we find that the in-plane uniaxial anisotropy retains its value for all samples, the perpendicular anisotropy remains almost unchanged for different thickness of Gd layer but the values are tailored by different thicknesses of Nd layer. The Gilbert damping is almost unchanged with different thicknesses of Gd; however, the Gilbert dampingmore » is significantly enhanced from 8.4×10{sup −3} to 20.1×10{sup −3} with 6 nm of Nd and then flatten out when the Nd thickness rises above 6 nm.« less

Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

NASA Technical Reports Server (NTRS)

Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

1994-01-01

A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

NASA Astrophysics Data System (ADS)

Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

2006-05-01

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

Velocity surface measurements for ZnO films over /001/-cut GaAs

NASA Technical Reports Server (NTRS)

Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

1994-01-01

A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

The ZnSe(110) puzzle - Comparison with GaAs(110)

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

1984-01-01

The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shang Gao

2015-11-30

A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJmore » and peak power of 2.8 kW. (control of laser radiation parameters)« less

Modifying exchange-spring behavior of CoPt/NiFe bilayer by inserting a Pt or Ru spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw; Tsai, C. L.; Lee, C.-M.

2015-05-07

We herein explore the possibility of obtaining tunable tilted magnetic anisotropy in ordered-CoPt (5 nm)/NiFe(t{sub NiFe}) bilayers through modifying their exchange spring behavior by inserting Pt and Ru-spacers. The tuning process of tilt angle magnetization of NiFe-layer was systematically investigated by varying the Pt or Ru thickness (t{sub Pt} or t{sub Ru}) from 0 to 8 nm at different thicknesses of NiFe (t{sub NiFe} = 1.5, 4.0, and 6.0 nm). Polar magneto-optic Kerr effect (p-MOKE) studies reveal that the bilayers grown in absence of spacers exhibit almost a rectangular hysteresis loop. With the insertion of Pt-spacer, the loop becomes more and more tilted as t{submore » Pt} increases; whereas, in the case of Ru-spacer, the nature of the loops is not simply changing in one direction. The estimated SQR{sub ⊥} (= θ{sub r}/θ{sub s}) values from the p-MOKE loops are found to monotonically decrease with increasing t{sub Pt} when t{sub Pt} ≦ 4 nm. In contrast, in the case of Ru-spacer, an oscillatory behavior for the SQR{sub ⊥} values is apparent when t{sub Ru} ≦ 4 nm. As a result, an oscillatory tilted angle of NiFe spin configuration was obtained in the case of Ru-spacer; while a decoupling effect was prominent for the Pt-spacer. The results of present study reveal that the insertion of Pt and Ru-spacers as an appropriate means for realizing tunable tilted magnetic anisotropy in the CoPt/NiFe exchange springs.« less

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

1995-05-01

Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Microprocessor design for GaAs technology

NASA Astrophysics Data System (ADS)

Milutinovic, Veljko M.

Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Image quality of a pixellated GaAs X-ray detector

NASA Astrophysics Data System (ADS)

Sun, G. C.; Makham, S.; Bourgoin, J. C.; Mauger, A.

2007-02-01

X-ray detection requires materials with large atomic numbers Z in order to absorb the radiation efficiently. In case of X-ray imaging, fluorescence is a limiting factor for the spatial resolution and contrast at energies above the kα threshold. Since both the energy and yield of the fluorescence of a given material increase with the atomic number, there is an optimum value of Z. GaAs, which can now be epitaxially grown as self-supported thick layers to fulfil the requirements for imaging (good homogeneity of the electronic properties) corresponds to this optimum. Image performances obtained with this material are evaluated in terms of line spread function and modulation transfer function, and a comparison with CsI is made. We evaluate the image contrast obtained for a given object contrast with GaAs and CsI detectors, in the photon energy range of medical applications. Finally, we discuss the minimum object size, which can be detected by these detectors in of mammography conditions. This demonstrates that an object of a given size can be detected using a GaAs detector with a dose at least 100 times lower than using a CsI detector.

Metastable bcc phase formation in 3d ferromagnetic transition metal thin films sputter-deposited on GaAs(100) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minakawa, Shigeyuki, E-mail: s-minakawa@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Futamoto, Masaaki

2015-05-07

Co{sub 100−x}Fe{sub x} and Ni{sub 100−y}Fe{sub y} (at. %, x = 0–30, y = 0–60) films of 10 nm thickness are prepared on GaAs(100) substrates at room temperature by using a radio-frequency magnetron sputtering system. The detailed growth behavior is investigated by in-situ reflection high-energy electron diffraction. (100)-oriented Co and Ni single-crystals with metastable bcc structure are formed in the early stage of film growth, where the metastable structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the Co and the Ni films start to transform into more stable hcp and fcc structures through atomic displacements parallel to bcc(110) slide planes,more » respectively. The stability of bcc phase is improved by adding a small volume of Fe atoms into a Co film. The critical thickness of bcc phase formation is thicker than 10 nm for Co{sub 100−x}Fe{sub x} films with x ≥ 10. On the contrary, the stability of bcc phase for Ni-Fe system is less than that for Co-Fe system. The critical thicknesses for Ni{sub 100−y}Fe{sub y} films with y = 20, 40, and 60 are 1, 3, and 5 nm, respectively. The Co{sub 100−x}Fe{sub x} single-crystal films with metastable bcc structure formed on GaAs(100) substrates show in-plane uniaxial magnetic anisotropies with the easy direction along GaAs[011], similar to the case of Fe film epitaxially grown on GaAs(100) substrate. A Co{sub 100−x}Fe{sub x} film with higher Fe content shows a higher saturation magnetization and a lower coercivity.« less

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Porosity of spacer-filled channels in spiral-wound membrane systems: Quantification methods and impact on hydraulic characterization.

PubMed

Siddiqui, A; Lehmann, S; Haaksman, V; Ogier, J; Schellenberg, C; van Loosdrecht, M C M; Kruithof, J C; Vrouwenvelder, J S

2017-08-01

The porosity of spacer-filled feed channels influences the hydrodynamics of spiral-wound membrane systems and impacts the overall performance of the system. Therefore, an exact measurement and a detailed understanding of the impact of the feed channel porosity is required to understand and improve the hydrodynamics of spiral-wound membrane systems applied for desalination and wastewater reuse. The objectives of this study were to assess the accuracy of porosity measurement techniques for feed spacers differing in geometry and thickness and the consequences of using an inaccurate method on hydrodynamic predictions, which may affect permeate production. Six techniques were applied to measure the porosity namely, three volumetric techniques based on spacer strand count together with a cuboidal (SC), cylindrical (VCC) and ellipsoidal volume calculation (VCE) and three independent techniques based on volume displacement (VD), weight and density (WD) and computed tomography (CT) scanning. The CT method was introduced as an alternative for the other five already existing and applied methods in practice. Six feed spacers used for the porosity measurement differed in filament thickness, angle between the filaments and mesh-size. The results of the studies showed differences between the porosities, measured by the six methods. The results of the microscopic techniques SC, VCC and VCE deviated significantly from measurements by VD, WD and CT, which showed similar porosity values for all spacer types. Depending on the maximum deviation of the porosity measurement techniques from -6% to +6%, (i) the linear velocity deviations were -5.6% and +6.4% respectively and (ii) the pressure drop deviations were -31% and +43% respectively, illustrating the importance of an accurate porosity measurement. Because of the accuracy and standard deviation, the VD and WD method should be applied for the porosity determination of spacer-filled channels, while the CT method is recommended

Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

DTIC Science & Technology

1992-12-01

AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

GaAs Computer Technology

DTIC Science & Technology

1992-01-07

AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

Growth of semimetallic ErAs films epitaxially embedded in GaAs

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Lee, Jong H.; Ferrer, Domingo A.; Akinwande, Deji; Bank, Seth R.

2011-10-01

We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

PubMed Central

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-01-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure.

PubMed

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-12

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

NASA Astrophysics Data System (ADS)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Self-aligned quadruple patterning using spacer on spacer integration optimization for N5

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Mohanty, Nihar; Kal, Subhadeep; Liu, Eric; Ko, Akiteru; O'Meara, David; Tapily, Kandabara; Biolsi, Peter

2017-04-01

To meet scaling requirements, the semiconductor industry has extended 193nm immersion lithography beyond its minimum pitch limitation using multiple patterning schemes such as self-aligned double patterning, self-aligned quadruple patterning and litho-etch / litho etch iterations. Those techniques have been declined in numerous options in the last few years. Spacer on spacer pitch splitting integration has been proven to show multiple advantages compared to conventional pitch splitting approach. Reducing the number of pattern transfer steps associated with sacrificial layers resulted in significant decrease of cost and an overall simplification of the double pitch split technique. While demonstrating attractive aspects, SAQP spacer on spacer flow brings challenges of its own. Namely, material set selections and etch chemistry development for adequate selectivities, mandrel shape and spacer shape engineering to improve edge placement error (EPE). In this paper we follow up and extend upon our previous learning and proceed into more details on the robustness of the integration in regards to final pattern transfer and full wafer critical dimension uniformity. Furthermore, since the number of intermediate steps is reduced, one will expect improved uniformity and pitch walking control. This assertion will be verified through a thorough pitch walking analysis.

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Hidetoshi, E-mail: hsuzuki@cc.miyazaki-u.ac.jp; Nakata, Yuka; Takahasi, Masamitu

2016-03-15

The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain sizemore » was smaller for all film thicknesses.« less

Spacer grid assembly and locking mechanism

DOEpatents

Snyder, Jr., Harold J.; Veca, Anthony R.; Donck, Harry A.

1982-01-01

A spacer grid assembly is disclosed for retaining a plurality of fuel rods in substantially parallel spaced relation, the spacer grids being formed with rhombic openings defining contact means for engaging from one to four fuel rods arranged in each opening, the spacer grids being of symmetric configuration with their rhombic openings being asymmetrically offset to permit inversion and relative rotation of the similar spacer grids for improved support of the fuel rods. An improved locking mechanism includes tie bars having chordal surfaces to facilitate their installation in slotted circular openings of the spacer grids, the tie rods being rotatable into locking engagement with the slotted openings.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

PubMed

Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

2017-10-02

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

PubMed

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

NASA Astrophysics Data System (ADS)

Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.

2004-03-01

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

NASA Technical Reports Server (NTRS)

Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei

1995-01-01

A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Effects of spacer orientations on the cake formation during membrane fouling: Quantitative analysis based on 3D OCT imaging.

PubMed

Liu, Xin; Li, Weiyi; Chong, Tzyy Haur; Fane, Anthony G

2017-03-01

Spacer design plays an important role in improving the performance of membrane processes for water/wastewater treatment. This work focused on a fundamental issue of spacer design, i.e., investigating the effects of spacer orientations on the fouling behavior during a membrane process. A series of fouling experiments with different spacer orientation were carried out to in situ characterize the formation of a cake layer in a spacer unit cell via 3D optical coherence tomography (OCT) imaging. The cake layers formed at different times were digitalized for quantitatively analyzing the variation in the cake morphology as a function of time. In particular, the local deposition rates were evaluated to determine the active regions where the instantaneous changes in deposit thickness were significant. The characterization results indicate that varying the spacer orientation could substantially change the evolution of membrane fouling by particulate foulants and thereby result in a cake layer with various morphologies; the competition between growth and erosion at different locations would instantaneously respond to the micro-hydrodynamic environment that might change with time. This work confirms that the OCT-based characterization method is a powerful tool for exploring novel spacer design. Copyright © 2016 Elsevier Ltd. All rights reserved.

Fouling resilient perforated feed spacers for membrane filtration.

PubMed

Kerdi, Sarah; Qamar, Adnan; Vrouwenvelder, Johannes S; Ghaffour, Noreddine

2018-04-24

The improvement of feed spacers with optimal geometry remains a key challenge for spiral-wound membrane systems in water treatment due to their impact on the hydrodynamic performance and fouling development. In this work, novel spacer designs are proposed by intrinsically modifying cylindrical filaments through perforations. Three symmetric perforated spacers (1-Hole, 2-Hole, and 3-Hole) were in-house 3D-printed and experimentally evaluated in terms of permeate flux, feed channel pressure drop and membrane fouling. Spacer performance is characterized and compared with standard no perforated (0-Hole) design under constant feed pressure and constant feed flow rate. Perforations in the spacer filaments resulted in significantly lowering the net pressure drop across the spacer filled channel. The 3-Hole spacer was found to have the lowest pressure drop (50%-61%) compared to 0-Hole spacer for various average flow velocities. Regarding permeate flux production, the 0-Hole spacer produced 5.7 L m -2 .h -1 and 6.6 L m -2 .h -1 steady state flux for constant pressure and constant feed flow rate, respectively. The 1-Hole spacer was found to be the most efficient among the perforated spacers with 75% and 23% increase in permeate production at constant pressure and constant feed flow, respectively. Furthermore, membrane surface of 1-Hole spacer was found to be cleanest in terms of fouling, contributing to maintain higher permeate flux production. Hydrodynamic understanding of these perforated spacers is also quantified by performing Direct Numerical Simulation (DNS). The performance enhancement of these perforated spacers is attributed to the formation of micro-jets in the spacer cell that aided in producing enough unsteadiness/turbulence to clean the membrane surface and mitigate fouling phenomena. In the case of 1-Hole spacer, the unsteadiness intensity at the outlet of micro-jets and the shear stress fluctuations created inside the cells are higher than those

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Generator stator core vent duct spacer posts

DOEpatents

Griffith, John Wesley; Tong, Wei

2003-06-24

Generator stator cores are constructed by stacking many layers of magnetic laminations. Ventilation ducts may be inserted between these layers by inserting spacers into the core stack. The ventilation ducts allow for the passage of cooling gas through the core during operation. The spacers or spacer posts are positioned between groups of the magnetic laminations to define the ventilation ducts. The spacer posts are secured with longitudinal axes thereof substantially parallel to the core axis. With this structure, core tightness can be assured while maximizing ventilation duct cross section for gas flow and minimizing magnetic loss in the spacers.

Imaging performance of a Timepix detector based on semi-insulating GaAs

NASA Astrophysics Data System (ADS)

Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

2018-01-01

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

Industrially prefabricated cement spacers: do vancomycin- and gentamicin-impregnated spacers offer any advantage?

PubMed

Corona, Pablo S; Barro, Victor; Mendez, Marye; Cáceres, Enric; Flores, Xavier

2014-03-01

Industrially preformed antibiotic-loaded cement spacers are useful to facilitate the second stage of two-stage exchange arthroplasty for infected THAs and TKAs. However, whether gentamicin alone or a combination of antibiotics (such as vancomycin and gentamicin) is more effective is not known. We therefore sought to compare industrially prefabricated spacers containing either gentamicin or gentamicin and vancomycin with respect to (1) infection control, (2) complications, and (3) quality of life, pain, and patient satisfaction. We performed a review of 51 patients with chronic infections treated at one center using either gentamicin or vancomycin and gentamicin-prefabricated spacers. The former were used exclusively from January 2006 until May 2009, and the latter from June 2009 until July 2011, and there was no overlap. We collected data on demographics, immunologic status (McPherson classification), prosthetic joint infection location, type of prosthesis, microbiologic results, and time between stages. We evaluated the primary outcome of infection control or recurrence after at least 12 months followup. We also recorded complications. Each patient completed a quality-of-life survey, VAS, and a self-administered satisfaction scale. The overall infection control rate was 83% after a mean followup of 35 months (range, 12.4-64.7 months). There were no differences between gentamicin and vancomycin and gentamicin spacers in terms of infection eradication (80 % versus 85 %, respectively; p = 0.73), nor in terms of complications, quality of life, pain, or satisfaction scores. Prefabricated, antibiotic-loaded cement spacers has been proven effective for infection control in TKAs and THAs but with the numbers available, we did not find any differences between a gentamicin or vancomycin and gentamicin-prefabricated spacer, and therefore, we are unable to validate the superiority of the combination of vancomycin and gentamicin over gentamicin alone. Because of the higher

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Comparative research on activation technique for GaAs photocathodes

NASA Astrophysics Data System (ADS)

Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

2012-03-01

The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

Properties of epitaxial BaTiO{sub 3} deposited on GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Contreras-Guerrero, R.; Droopad, R.; Veazey, J. P.

2013-01-07

Single crystal BaTiO{sub 3} (BTO) has been grown epitaxially on GaAs using molecular beam epitaxy with a 2 unit cell SrTiO{sub 3} nucleation layer. The oxide film is lattice-matched to GaAs through an in-plane rotation of 45 Degree-Sign relative to the (100) surface leading to c-axis orientation of the BaTiO{sub 3}. X-ray diffraction confirmed the crystallinity and orientation of the oxide film with a full width half maximum of 0.58 Degree-Sign for a 7.5 nm thick layer. Piezoresponse force microscopy was used to characterize the ferroelectric domains in the BaTiO{sub 3} layer, and a coercive voltage of 1-2 V andmore » piezoresponse amplitude {approx}5 pm/V was measured.« less

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

LEC GaAs for integrated circuit applications

NASA Technical Reports Server (NTRS)

Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

1984-01-01

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Optimal number of spacers in CRISPR arrays

PubMed Central

Severinov, Konstantin; Ispolatov, Iaroslav

2017-01-01

Prokaryotic organisms survive under constant pressure of viruses. CRISPR-Cas system provides its prokaryotic host with an adaptive immune defense against viruses that have been previously encountered. It consists of two components: Cas-proteins that cleave the foreign DNA and CRISPR array that suits as a virus recognition key. CRISPR array consists of a series of spacers, short pieces of DNA that originate from and match the corresponding parts of viral DNA called protospacers. Here we estimate the number of spacers in a CRISPR array of a prokaryotic cell which maximizes its protection against a viral attack. The optimality follows from a competition between two trends: too few distinct spacers make host vulnerable to an attack by a virus with mutated corresponding protospacers, while an excessive variety of spacers dilutes the number of the CRISPR complexes armed with the most recent and thus most useful spacers. We first evaluate the optimal number of spacers in a simple scenario of an infection by a single viral species and later consider a more general case of multiple viral species. We find that depending on such parameters as the concentration of CRISPR-Cas interference complexes and its preference to arm with more recently acquired spacers, the rate of viral mutation, and the number of viral species, the predicted optimal number of spacers lies within a range that agrees with experimentally-observed values. PMID:29253874

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

NASA Astrophysics Data System (ADS)

Fukushima, A.; Taniguchi, T.; Sugihara, A.; Yakushiji, K.; Kubota, H.; Yuasa, S.

2018-05-01

Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory. Recently, a large exchange coupling (IEC) in the synthetic antiferromagnetic reference layer with Ir interlayer was observed in p-MTJs. The evaluation of the IEC is, however, difficult due to the electrostatic breakdown of MTJs. This study demonstrates the evaluation of the IEC with Ir interlayer in giant magnetoresistive (GMR) nanopillar. We fabricated three kinds of perpendicularly magnetized GMR elements; bottom-free structures with Cu or Ir spacer, and top-free structure with Ir spacer. The magnetoresistance (RH) loops of all samples show sharp changes of the magnetoresistance at the magnetic fields over ±10 kOe, indicating the existence of the large IECs. In particular, a sharp change of the magnetoresistance at the field over ±20 kOe was found for the element with Cu of 2 nm thickness.

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Mitchel, William; Haas, T. W.; Yen, Ming-Yuan

1989-07-01

Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz-Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3-micron thick, a photoreflectance signal at the band edge contains a substrate-epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrova, Olga; Balakrishnan, Ganesh

2017-02-24

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less

GaAs Monolithic Microwave Subsystem Technology Base

DTIC Science & Technology

1980-01-01

To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

PubMed

Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

2018-01-22

A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakatani, T. M., E-mail: Tomoya.Nakatani@hgst.com; Childress, J. R.

2015-06-28

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than thosemore » with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.« less

Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET

NASA Astrophysics Data System (ADS)

Ko, Hyungwoo; Kim, Jongsu; Kim, Minsoo; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

The investigation of the Dual-k spacer through comparative analysis of single nanowire-FET(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the dug 3-stack NWFET has better delay characteristics than single NWFET with the use of high permittivity material of Cin in Dual-k spacer structure. In addition, there is no difference of delay between overlap and underlap channel when it used Dual-k spacer structure but underlap channel of Dual-k 3-stack NWFET shows better short channel immunity.

Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

NASA Astrophysics Data System (ADS)

Liu, W. Z.; Xu, H. Y.; Zhang, L. X.; Zhang, C.; Ma, J. G.; Wang, J. N.; Liu, Y. C.

2012-10-01

Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.

New Passivation Methods of GaAs.

DTIC Science & Technology

1980-01-01

Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

Spacer effect on nanostructures and self-assembly in organogels via some bolaform cholesteryl imide derivatives with different spacers

PubMed Central

2013-01-01

In this paper, new bolaform cholesteryl imide derivatives with different spacers were designed and synthesized. Their gelation behaviors in 23 solvents were investigated, and some of them were found to be low molecular mass organic gelators. The experimental results indicated that these as-formed organogels can be regulated by changing the flexible/rigid segments in spacers and organic solvents. Suitable combination of flexible/rigid segments in molecular spacers in the present cholesteryl gelators is favorable for the gelation of organic solvents. Scanning electron microscopy and atomic force microscopy observations revealed that the gelator molecules self-assemble into different aggregates, from wrinkle and belt to fiber with the change of spacers and solvents. Spectral studies indicated that there existed different H-bond formations between imide groups and assembly modes, depending on the substituent spacers in molecular skeletons. The present work may give some insight into the design and character of new organogelators and soft materials with special molecular structures. PMID:24083361

Spacer effect on nanostructures and self-assembly in organogels via some bolaform cholesteryl imide derivatives with different spacers

NASA Astrophysics Data System (ADS)

Jiao, Tifeng; Gao, Fengqing; Zhang, Qingrui; Zhou, Jingxin; Gao, Faming

2013-10-01

In this paper, new bolaform cholesteryl imide derivatives with different spacers were designed and synthesized. Their gelation behaviors in 23 solvents were investigated, and some of them were found to be low molecular mass organic gelators. The experimental results indicated that these as-formed organogels can be regulated by changing the flexible/rigid segments in spacers and organic solvents. Suitable combination of flexible/rigid segments in molecular spacers in the present cholesteryl gelators is favorable for the gelation of organic solvents. Scanning electron microscopy and atomic force microscopy observations revealed that the gelator molecules self-assemble into different aggregates, from wrinkle and belt to fiber with the change of spacers and solvents. Spectral studies indicated that there existed different H-bond formations between imide groups and assembly modes, depending on the substituent spacers in molecular skeletons. The present work may give some insight into the design and character of new organogelators and soft materials with special molecular structures.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

NASA Technical Reports Server (NTRS)

Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei; Kim, Yoonkee; Hunt, William D.

1995-01-01

A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction

NASA Astrophysics Data System (ADS)

Ji, Xiaochen; Shen, Chao; Wu, Yuanjun; Lu, Jun; Zhao, Jianhua; Zheng, Houzhi

2017-11-01

By biasing a ferromagnetic metal MnGa/10 nm-thick, n-type GaAs quantum well (QW) junction from negative to positive, it is found that its spin dynamics at zero magnetic field is composed of two components with opposite signs. One is excited by a circularly polarized pump beam. The other is induced by ferromagnetic proximity polarization (FPP), which is continuously enhanced as the bias increases towards the positive direction. The time-resolved Kerr rotations have also been measured at a magnetic field of 0.9 Tesla. A phase reversion of Larmor precession is observed as the bias passes through  +0.5 V. Following simple quantum mechanics, we become aware of the fact that the transmission and reflection rates of electrons at the interface of MnGa/n-type GaAs QW are enhanced by a factor of ν , which is the attempting frequency of electron onto a ferromagnet/semiconductor interface. That gives a reasonable explanation why the FPP effect in our MnGa/n-type GaAs QW junction is greatly enhanced as biasing it into forward direction.

Phosphine Functionalization GaAs(111)A Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Traub, M.; Biteen, J; Michalak, D

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

The ribosomal gene spacer region in archaebacteria

NASA Technical Reports Server (NTRS)

Achenbach-Richter, L.; Woese, C. R.

1988-01-01

Sequences for the spacer regions that separate the 16S and 23S ribosomal RNA genes have been determined for four more (strategically placed) archaebacteria. These confirm the general rule that methanogens and extreme halophiles have spacers that contain a single tRNAala gene, while tRNA genes are not found in the spacer region of the true extreme thermophiles. The present study also shows that the spacer regions from the sulfate reducing Archaeglobus and the extreme thermophile Thermococcus (both of which cluster phylogenetically with the methanogens and extreme halophiles) contain each a tRNAala gene. Thus, not only all methanogens and extreme halophiles show this characteristic, but all organisms on the "methanogen branch" of the archaebacterial tree appear to do so. The finding of a tRNA gene in the spacer region of the extreme thermophile Thermococcus celer is the first known phenotypic property that links this organism with its phylogenetic counterparts, the methanogens, rather than with its phenotypic counterparts, the sulfur-dependent extreme thermophiles.

Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241.

DTIC Science & Technology

1992-09-14

AIGaAs-GaAs QUANTUM WELLS GROWN ON LOW TEMPERATURE GaAs 239 Y. Hwang, D. Zhang, T. Zhang, M. Mytych, and R.M. Kolbas MOLECULAR BEAM EPITAXY OF LOW...GaA/ quantum wells : 24i howvever, in our case. AIks layers were not introduced. Formation (if these rows is most prolf,.+l influenced hb the diffusimon...regions. Preliminary investigations into this method have been performed using GaAs quantum wells between thick AIGaAs barriers as shown in Fig. 7. This

Nitridation of porous GaAs by an ECR ammonia plasma

NASA Astrophysics Data System (ADS)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Electrical properties of spin coated ultrathin titanium oxide films on GaAs

NASA Astrophysics Data System (ADS)

Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

2015-04-01

In recent years, ultrathin (<50 nm) metal oxide films have been being extensively studied as high-k dielectrics for future metal oxide semiconductor (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaitsev, S. V., E-mail: szaitsev@issp.ac.ru; Akimov, I. A.; Langer, L.

2016-09-15

The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerrmore » signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW.« less

Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Weiquan; Becker, Jacob; Liu, Shi

2014-05-28

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

PubMed

Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

2014-01-01

First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Characteristics of GaAs with inverted thermal conversion

NASA Technical Reports Server (NTRS)

Kang, C. H.; Lagowski, J.; Gatos, H. C.

1987-01-01

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

Magnetotransport properties of spin-valve structures with Mg spacer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Boubeta, C., E-mail: cboubeta@gmail.com; Ferrante, Y.; Graduate School of Excellence, Materials Science in Mainz, 55128 Mainz

2015-01-19

A theoretical prediction by Wang et al. [Phys. Rev. B 82, 054405 (2010)] suggests the preferential transmission of majority-spin states with Δ{sub 1} symmetry across a magnesium interlayer in Fe/Mg/MgO/Fe based magnetic tunnel junctions. Here, we report experiments to probe this question in CoFe/Mg/CoFe structures. We find that the strength of the interlayer coupling decays exponentially with increasing the spacer thickness, however, a non-monotonic variation of the magnetoresistance as a function of the Mg layer is observed. These data may help revisit the role of the insertion of a Mg interface layer in MgO-based devices.

How to use an inhaler - with spacer

MedlinePlus

... MDIs) usually have 3 parts: A mouthpiece A cap that goes over the mouthpiece A canister full ... Take the cap off the inhaler and spacer. Shake the inhaler hard. Attach the spacer to the inhaler. If you have ...

Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate

NASA Astrophysics Data System (ADS)

Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

2018-02-01

The growth of undoped GaSb epilayers on GaAs (0 0 1) substrates with 2° offcut towards 〈1 1 0〉, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2 μm-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90° pure-edge dislocations along the [1 1 0] direction with a periodicity of 5.6 nm.

Electrodeposition of Metal on GaAs Nanowires

NASA Astrophysics Data System (ADS)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

Comparison of internal transcribed spacers and intergenic spacer regions of five common Iranian sheep bursate nematodes.

PubMed

Nabavi, Reza; Conneely, Brendan; McCarthy, Elaine; Good, Barbara; Shayan, Parviz; DE Waal, Theo

2014-09-01

Accurate identification of sheep nematodes is a critical point in epidemiological studies and monitoring of drug resistance in flocks. However, due to a close morphological similarity between the eggs and larval stages of many of these nematodes, such identification is not a trivial task. There are a number of studies showing that molecular targets in ribosomal DNA (Internal transcribed spacer 1, 2 and Intergenic spacer) are suitable for accurate identification of sheep bursate nematodes. The objective of present study was to compare the ITS1, ITS2 and IGS regions of Iranian common bursate nematodes in order to choose best target for specific identification methods. The first and second internal transcribed spacers (ITS1and ITS2) and intergenic spacer (IGS) of the ribosomal DNA (rDNA) of 5 common Iranian bursate nematodes of sheep were sequenced. The sequences of some non-Iranian isolates were used for comparison in order to evaluate the variation in sequence homology between geographically different nematode populations. Comparison of the ITS1 and ITS2 sequences of Iranian nematodes showed greatest similarity among Teladorsagia circumcincta and Marshallagia marshalli of 94% and 88%, respectively. While Trichostrongylus colubriformis and M. marshalli showed the highest homology (99%) in the IGS sequences. Comparison of the spacer sequences of Iranian with non-Iranian isolates showed significantly higher variation in Haemonchus contortus compared to the other species. Both the ITS1 and ITS2 sequences are convenient targets to have species-specific identification of Iranian bursate nematodes. On the other hand the IGS region may be a less suitable molecular target.

Nanoparticle-based brachytherapy spacers for delivery of localized combined chemoradiation therapy.

PubMed

Kumar, Rajiv; Belz, Jodi; Markovic, Stacey; Jadhav, Tej; Fowle, William; Niedre, Mark; Cormack, Robert; Makrigiorgos, Mike G; Sridhar, Srinivas

2015-02-01

In radiation therapy (RT), brachytherapy-inert source spacers are commonly used in clinical practice to achieve high spatial accuracy. These implanted devices are critical technical components of precise radiation delivery but provide no direct therapeutic benefits. Here we have fabricated implantable nanoplatforms or chemoradiation therapy (INCeRT) spacers loaded with silica nanoparticles (SNPs) conjugated containing a drug, to act as a slow-release drug depot for simultaneous localized chemoradiation therapy. The spacers are made of poly(lactic-co-glycolic) acid (PLGA) as matrix and are physically identical in size to the commercially available brachytherapy spacers (5 mm × 0.8 mm). The silica nanoparticles, 250 nm in diameter, were conjugated with near infrared fluorophore Cy7.5 as a model drug, and the INCeRT spacers were characterized in terms of size, morphology, and composition using different instrumentation techniques. The spacers were further doped with an anticancer drug, docetaxel. We evaluated the in vivo stability, biocompatibility, and biodegradation of these spacers in live mouse tissues. The electron microscopy studies showed that nanoparticles were distributed throughout the spacers. These INCeRT spacers remained stable and can be tracked by the use of optical fluorescence. In vivo optical imaging studies showed a slow diffusion of nanoparticles from the spacer to the adjacent tissue in contrast to the control Cy7.5-PLGA spacer, which showed rapid disintegration in a few days with a burst release of Cy7.5. The docetaxel spacers showed suppression of tumor growth in contrast to control mice over 16 days. The imaging with the Cy7.5 spacer and therapeutic efficacy with docetaxel spacers supports the hypothesis that INCeRT spacers can be used for delivering the drugs in a slow, sustained manner in conjunction with brachytherapy, in contrast to the rapid clearance of the drugs when administered systemically. The results demonstrate that these spacers

Nanoparticle-Based Brachytherapy Spacers for Delivery of Localized Combined Chemoradiation Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajiv, E-mail: r.kumar@neu.edu; Department of Radiation Oncology, Brigham and Women's Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, Massachusetts; Belz, Jodi

Purpose: In radiation therapy (RT), brachytherapy-inert source spacers are commonly used in clinical practice to achieve high spatial accuracy. These implanted devices are critical technical components of precise radiation delivery but provide no direct therapeutic benefits. Methods and Materials: Here we have fabricated implantable nanoplatforms or chemoradiation therapy (INCeRT) spacers loaded with silica nanoparticles (SNPs) conjugated containing a drug, to act as a slow-release drug depot for simultaneous localized chemoradiation therapy. The spacers are made of poly(lactic-co-glycolic) acid (PLGA) as matrix and are physically identical in size to the commercially available brachytherapy spacers (5 mm × 0.8 mm). The silica nanoparticles, 250 nm in diameter,more » were conjugated with near infrared fluorophore Cy7.5 as a model drug, and the INCeRT spacers were characterized in terms of size, morphology, and composition using different instrumentation techniques. The spacers were further doped with an anticancer drug, docetaxel. We evaluated the in vivo stability, biocompatibility, and biodegradation of these spacers in live mouse tissues. Results: The electron microscopy studies showed that nanoparticles were distributed throughout the spacers. These INCeRT spacers remained stable and can be tracked by the use of optical fluorescence. In vivo optical imaging studies showed a slow diffusion of nanoparticles from the spacer to the adjacent tissue in contrast to the control Cy7.5-PLGA spacer, which showed rapid disintegration in a few days with a burst release of Cy7.5. The docetaxel spacers showed suppression of tumor growth in contrast to control mice over 16 days. Conclusions: The imaging with the Cy7.5 spacer and therapeutic efficacy with docetaxel spacers supports the hypothesis that INCeRT spacers can be used for delivering the drugs in a slow, sustained manner in conjunction with brachytherapy, in contrast to the rapid clearance of the drugs when

GaAs Solar Cell Radiation Handbook

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.

1996-01-01

The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1979-01-01

The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Placidi, E.

2008-12-08

We report on single dot microphotoluminescence ({mu}PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO{sub 2} mask deposited on GaAs(001). By comparing atomic force microscopy measurements with {mu}PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highlymore » effective in the site-controlled dot nucleation.« less

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

NASA Technical Reports Server (NTRS)

Vonross, O.

1980-01-01

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Characterisation of semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

1982-01-01

Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

Distance-Dependent Plasmon-Enhanced Fluorescence of Upconversion Nanoparticles using Polyelectrolyte Multilayers as Tunable Spacers

PubMed Central

Feng, Ai Ling; You, Min Li; Tian, Limei; Singamaneni, Srikanth; Liu, Ming; Duan, Zhenfeng; Lu, Tian Jian; Xu, Feng; Lin, Min

2015-01-01

Lanthanide-doped upconversion nanoparticles (UCNPs) have attracted widespread interests in bioapplications due to their unique optical properties by converting near infrared excitation to visible emission. However, relatively low quantum yield prompts a need for developing methods for fluorescence enhancement. Plasmon nanostructures are known to efficiently enhance fluorescence of the surrounding fluorophores by acting as nanoantennae to focus electric field into nano-volume. Here, we reported a novel plasmon-enhanced fluorescence system in which the distance between UCNPs and nanoantennae (gold nanorods, AuNRs) was precisely tuned by using layer-by-layer assembled polyelectrolyte multilayers as spacers. By modulating the aspect ratio of AuNRs, localized surface plasmon resonance (LSPR) wavelength at 980 nm was obtained, matching the native excitation of UCNPs resulting in maximum enhancement of 22.6-fold with 8 nm spacer thickness. These findings provide a unique platform for exploring hybrid nanostructures composed of UCNPs and plasmonic nanostructures in bioimaging applications. PMID:25586238

Distance-dependent plasmon-enhanced fluorescence of upconversion nanoparticles using polyelectrolyte multilayers as tunable spacers.

PubMed

Feng, Ai Ling; You, Min Li; Tian, Limei; Singamaneni, Srikanth; Liu, Ming; Duan, Zhenfeng; Lu, Tian Jian; Xu, Feng; Lin, Min

2015-01-14

Lanthanide-doped upconversion nanoparticles (UCNPs) have attracted widespread interests in bioapplications due to their unique optical properties by converting near infrared excitation to visible emission. However, relatively low quantum yield prompts a need for developing methods for fluorescence enhancement. Plasmon nanostructures are known to efficiently enhance fluorescence of the surrounding fluorophores by acting as nanoantennae to focus electric field into nano-volume. Here, we reported a novel plasmon-enhanced fluorescence system in which the distance between UCNPs and nanoantennae (gold nanorods, AuNRs) was precisely tuned by using layer-by-layer assembled polyelectrolyte multilayers as spacers. By modulating the aspect ratio of AuNRs, localized surface plasmon resonance (LSPR) wavelength at 980 nm was obtained, matching the native excitation of UCNPs resulting in maximum enhancement of 22.6-fold with 8 nm spacer thickness. These findings provide a unique platform for exploring hybrid nanostructures composed of UCNPs and plasmonic nanostructures in bioimaging applications.

Influence of Spacer Systems on Heat Transfer in Evacuated Glazing

NASA Astrophysics Data System (ADS)

Swimm, K.; Weinläder, H.; Ebert, H.-P.

2009-06-01

One attractive possibility to essentially improve the insulation properties of glazing is to evacuate the space between the glass panes. This eliminates heat transport due to convection between the glass panes and suppresses the thermal conductivity of the remaining low pressure filling gas atmosphere. The glass panes can be prevented from collapsing by using a matrix of spacers. These spacers, however, increase heat transfer between the glass panes. To quantify this effect, heat transfer through samples of evacuated glazing was experimentally determined. The samples were prepared with different kinds of spacer materials and spacer distances. The measurements were performed with a guarded hot-plate apparatus under steady-state conditions and at room temperature. The measuring chamber of the guarded hot plate was evacuated to < 10-2 Pa. An external pressure load of 0.1 MPa was applied on the samples to ensure realistic system conditions. Radiative heat transfer was significantly reduced by preparing the samples with a low- ɛ coating on one of the glass panes. In a first step, measurements without any spacers allowed quantification of the amount of radiative heat transfer. With these data, the measurements with spacers could be corrected to separate the effect of the spacers on thermal heat transfer. The influence of the thermal conductivity of the spacer material, as well as the distance between the spacers and the spacer geometry, was experimentally investigated and showed good agreement with simulation results. For mechanically stable matrices with cylindrical spacers, experimental thermal conductance values ≤0.44W·m-2 ·K-1 were found. This shows that U g -values of about 0.5W · m-2 · K-1 are achievable in evacuated glazing, if highly efficient low-emissivity coatings are used.

Technology requirements for GaAs photovoltaic arrays

NASA Technical Reports Server (NTRS)

Scott-Monck, J.; Rockey, D.

1981-01-01

An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

Crystal Growth of Device Quality Gaas in Space

NASA Technical Reports Server (NTRS)

Gatos, H. C.

1985-01-01

The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Plasmon enhanced fluorescence studies from aligned gold nanorod arrays modified with SiO{sub 2} spacer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damm, Signe; Fedele, Stefano; Rice, James H., E-mail: james.rice@ucd.ie

Here, we demonstrate that quasi self-standing Au nanorod arrays prepared with plasma polymerisation deposited SiO{sub 2} dielectric spacers support surface enhanced fluorescence (SEF) while maintaining high signal reproducibility. We show that it is possible to find a balance between enhanced radiative and non-radiative decay rates at which the fluorescent intensity is maximized. The SEF signal optimised with a 30 nm spacer layer thickness showed a 3.5-fold enhancement with a signal variance of <15% thereby keeping the integrity of the nanorod array. We also demonstrate the decreased importance of obtaining resonance conditions when localized surface plasmon resonance is positioned within the spectralmore » region of Au interband transitions. Procedures for further increasing the SEF enhancement factor are also discussed.« less

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Bioinformatics analyses of Shigella CRISPR structure and spacer classification.

PubMed

Wang, Pengfei; Zhang, Bing; Duan, Guangcai; Wang, Yingfang; Hong, Lijuan; Wang, Linlin; Guo, Xiangjiao; Xi, Yuanlin; Yang, Haiyan

2016-03-01

Clustered regularly interspaced short palindromic repeats (CRISPR) are inheritable genetic elements of a variety of archaea and bacteria and indicative of the bacterial ecological adaptation, conferring acquired immunity against invading foreign nucleic acids. Shigella is an important pathogen for anthroponosis. This study aimed to analyze the features of Shigella CRISPR structure and classify the spacers through bioinformatics approach. Among 107 Shigella, 434 CRISPR structure loci were identified with two to seven loci in different strains. CRISPR-Q1, CRISPR-Q4 and CRISPR-Q5 were widely distributed in Shigella strains. Comparison of the first and last repeats of CRISPR1, CRISPR2 and CRISPR3 revealed several base variants and different stem-loop structures. A total of 259 cas genes were found among these 107 Shigella strains. The cas gene deletions were discovered in 88 strains. However, there is one strain that does not contain cas gene. Intact clusters of cas genes were found in 19 strains. From comprehensive analysis of sequence signature and BLAST and CRISPRTarget score, the 708 spacers were classified into three subtypes: Type I, Type II and Type III. Of them, Type I spacer referred to those linked with one gene segment, Type II spacer linked with two or more different gene segments, and Type III spacer undefined. This study examined the diversity of CRISPR/cas system in Shigella strains, demonstrated the main features of CRISPR structure and spacer classification, which provided critical information for elucidation of the mechanisms of spacer formation and exploration of the role the spacers play in the function of the CRISPR/cas system.

Design and fabrication of six-volt vertically-stacked GaAs photovoltaic power converter

PubMed Central

Zhao, Yongming; Sun, Yurun; He, Yang; Yu, Shuzhen; Dong, Jianrong

2016-01-01

A six-volt vertically-stacked, high current GaAs photovoltaic power converter (PPC) has been designed and fabricated to produce output power over 1 W under monochromatic illumination. An N++-GaAs/P++-AlGaAs tunnel junctions (TJs) structure has been used for connecting each sub-cell in this vertically-stacked PPC device. The thickness of the each GaAs sub-cell has been derived based on the calculation of absorption depth of photons with a wavelength of 808 nm using absorption coefficient obtained from ellipsometry measurements. The devices were characterized under non-uniform CW laser illumination at 808 nm with incident power up to 4.1 W. A maximum conversion efficiency of 50.2% was achieved at 0.3 W under non-uniform (coupled in optical fiber) monochromatic illumination, dropping to 42.5% at 4.1 W. The operating voltage at the maximum power point is 5.5–6.0 V, depending on the incident laser power, and an output electrical power output of 1.3 W can be extracted at a laser power of 2.9 W and the maximum electrical power output amounts to 1.72 W. The external quantum efficiency (EQE) measurement indicates that the performance of PPC can be further improved by refining the design of the thickness of sub-cells and improving TJs. PMID:27901079

Optical absorption enhancement by inserting ZnO optical spacer in plasmonic organic solar cells

NASA Astrophysics Data System (ADS)

N'Konou, Kekeli; Torchio, Philippe

2018-01-01

Optical absorption enhancement (AE) using coupled optical spacer and plasmonic effects in standard and inverted organic solar cells (OSCs) are demonstrated using the finite-difference time-domain numerical method. The influence of an added zinc oxide (ZnO) optical spacer layer inserted below the active layer in standard architecture is first theoretically investigated while the influence of varying the ZnO cathodic buffer layer thickness in inverted design is studied on AE. Then, the embedding of a square periodic array of core-shell silver-silica nanospheres (Ag@SiO2 NSs) at different positions in standard and inverted OSCs is performed while AE and short-circuit current density (Jsc) are calculated. As a result of previous combined effects, the optimized standard plasmonic OSCs present 15% and 79.45% enhancement in J over the reference with and without ZnO optical spacer layer, respectively, and a 16% increase of AE when Ag@SiO2 NSs are placed on top of the PEDOT:PSS layer. Compared to the inverted OSC reference, the plasmonic OSCs present 26% and 27% enhancement in J and AE, respectively, when the Ag@SiO2 NSs are located on top of the ZnO layer. Furthermore, the spatial position of these NSs in such OSCs is a key parameter for increasing light absorption via enhanced electromagnetic field distribution.

Biomechanical Analysis of an Expandable Lumbar Interbody Spacer.

PubMed

Soriano-Baron, Hector; Newcomb, Anna G U S; Malhotra, Devika; Palma, Atilio E; Martinez-Del-Campo, Eduardo; Crawford, Neil R; Theodore, Nicholas; Kelly, Brian P; Kaibara, Taro

2018-06-01

Recently developed expandable interbody spacers are widely accepted in spinal surgery; however, the resulting biomechanical effects of their use have not yet been fully studied. We analyzed the biomechanical effects of an expandable polyetheretherketone interbody spacer inserted through a bilateral posterior approach with and without different modalities of posterior augmentation. Biomechanical nondestructive flexibility testing was performed in 7 human cadaveric lumbar (L2-L5) specimens followed by axial compressive loading. Each specimen was tested under 6 conditions: 1) intact, 2) bilateral L3-L4 cortical screw/rod (CSR) alone, 3) WaveD alone, 4) WaveD + CSR, 5) WaveD + bilateral L3-L4 pedicle screw/rod (PSR), and 6) WaveD + CSR/PSR, where CSR/PSR was a hybrid construct comprising bilateral cortical-level L3 and pedicle-level L4 screws interconnected by rods. The range of motion (ROM) with the interbody spacer alone decreased significantly compared with the intact condition during flexion-extension (P = 0.02) but not during lateral bending or axial rotation (P ≥ 0.19). The addition of CSR or PSR to the interbody spacer alone condition significantly decreased the ROM compared with the interbody spacer alone (P ≤ 0.002); and WaveD + CSR, WaveD + PSR, and WaveD + CSR/PSR (hybrid) (P ≥ 0.29) did not differ. The axial compressive stiffness (resistance to change in foraminal height during compressive loading) with the interbody spacer alone did not differ from the intact condition (P = 0.96), whereas WaveD + posterior instrumentation significantly increased compressive stiffness compared with the intact condition and the interbody spacer alone (P ≤ 0.001). The WaveD alone significantly reduced ROM during flexion-extension while maintaining the axial compressive stiffness. CSR, PSR, and CSR/PSR hybrid constructs were all effective in augmenting the expandable interbody spacer system and improving its stability. Copyright © 2018 Elsevier Inc. All

Doping assessment in GaAs nanowires.

PubMed

Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

2018-06-08

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Doping assessment in GaAs nanowires

NASA Astrophysics Data System (ADS)

Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

2018-06-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Study of interlayer coupling between FePt and FeCoB thin films through MgO spacer layer

NASA Astrophysics Data System (ADS)

Singh, Sadhana; Kumar, Dileep; Gupta, Mukul; Reddy, V. Raghvendra

2017-05-01

Interlayer exchange coupling between hard-FePt and soft-FeCoB magnetic layers has been studied with increasing thickness of insulator MgO spacer layer in FePt/MgO/FeCoB sandwiched structure. A series of the samples were prepared in identical condition using ion beam sputtering method and characterized for their magnetic and structural properties using magneto-optical Kerr effect (MOKE) and X-ray reflectivity measurements. The nature of coupling between FePt and FeCoB was found to be ferromagnetic which decreases exponentially with increasing thickness of MgO layer. At very low thickness of MgO layer, both layers were found strongly coupled thus exhibiting coherent magnetization reversal. At higher thickness, both layers were found decoupled and magnetization reversal occurred at different switching fields. Strong coupling at very low thickness is attributed to pin holes in MgO layer which lead to direct coupling whereas on increasing thickness, coupling may arise due to magneto-static interactions.

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

NASA Astrophysics Data System (ADS)

Gladskikh, Polina V.; Gladskikh, Igor A.; Toropov, Nikita A.; Vartanyan, Tigran A.

2016-04-01

Self-assembled silver, gold, and copper nanostructures on the monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current-voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 2, 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands of Au and Ag nanostructures caused by major transformations of the film morphology. While the as prepared films predominantly had a small scale labyrinth structure, after annealing well-separated nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

PubMed

Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2016-06-28

In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

NASA Astrophysics Data System (ADS)

Jacobi, K.; Geelhaar, L.; Márquez, J.

We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

Electrode pattern design for GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Haiyang, Chen; Jianhua, Yin; Darang, Li

2011-08-01

The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

GaAs core--shell nanowires for photovoltaic applications.

PubMed

Czaban, Josef A; Thompson, David A; LaPierre, Ray R

2009-01-01

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

Oscillations of absorption of a probe picosecond light pulse caused by its interaction with stimulated picosecond emission of GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ageeva, N. N.; Bronevoi, I. L., E-mail: bil@cplire.ru; Zabegaev, D. N.

2015-04-15

The self-modulation of absorption of a picosecond light pulse was observed earlier [1] in a thin (∼1-μm thick) GaAs layer pumped by a high-power picosecond pulse. Analysis of the characteristics of this self-modulation predicted [5] that the dependences of the probe pulse absorption on the pump pulse energy and picosecond delay between pump and probe pulses should be self-modulated by oscillations. Such self-modulation was experimentally observed in this work. Under certain conditions, absorption oscillations proved to be a function of part of the energy of picosecond stimulated emission of GaAs lying above a certain threshold in the region where themore » emission front overlapped the probe pulse front. Absorption oscillations are similar to self-modulation of the GaAs emission characteristics observed earlier [4]. This suggests that the self-modulation of absorption and emission is determined by the same type of interaction of light pulses in the active medium, the physical mechanism of which has yet to be determined.« less

Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M.

2017-02-22

Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novelmore » molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.« less

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

GaAs homojunction solar cell development

NASA Technical Reports Server (NTRS)

Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

1980-01-01

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Preparation of the spacer for narrow electrode gap configuration in ionization-based gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2012-09-26

Carbon nanotubes (CNTs) have started to be developed as the sensing element for ionization-based gas sensors due to the demand for improved sensitivity, selectivity, stability and other sensing properties beyond what can be offered by the conventional ones. Although these limitations have been overcome, the problems still remain with the conventional ionization-based gas sensors in that they are bulky and operating with large breakdown voltage and high temperature. Recent studies have shown that the breakdown voltage can be reduced by using nanostructured electrodes and narrow electrode gap. Nanostructured electrode in the form of aligned CNTs array with evenly distributed nanotipsmore » can enhance the linear electric field significantly. The later is attributed to the shorter conductivity path through narrow electrode gap. The paper presents the study on the design consideration in order to realize ionization based gas sensor using aligned carbon nanotubes array in an optimum sensor configuration with narrow electrode gap. Several deposition techniques were studied to deposit the spacer, the key component that can control the electrode gap. Plasma spray deposition, electron beam deposition and dry oxidation method were employed to obtain minimum film thickness around 32 {mu}m. For plasma spray method, sand blasting process is required in order to produce rough surface for strong bonding of the deposited film onto the surface. Film thickness, typically about 39 {mu}m can be obtained. For the electron beam deposition and dry oxidation, the film thickness is in the range of nanometers and thus unsuitable to produce the spacer. The deposited multilayer film consisting of copper, alumina and ferum on which CNTs array will be grown was found to be removed during the etching process. This is attributed to the high etching rate on the thin film which can be prevented by reducing the rate and having a thicker conductive copper film.« less

Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2017-02-01

This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Panel fabrication utilizing GaAs solar cells

NASA Technical Reports Server (NTRS)

Mardesich, N.

1984-01-01

The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Comparisons of single event vulnerability of GaAs SRAMS

NASA Astrophysics Data System (ADS)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Advanced hole patterning technology using soft spacer materials (Conference Presentation)

NASA Astrophysics Data System (ADS)

Park, Jong Keun; Hustad, Phillip D.; Aqad, Emad; Valeri, David; Wagner, Mike D.; Li, Mingqi

2017-03-01

A continuing goal in integrated circuit industry is to increase density of features within patterned masks. One pathway being used by the device manufacturers for patterning beyond the 80nm pitch limitation of 193 immersion lithography is the self-aligned spacer double patterning (SADP). Two orthogonal line space patterns with subsequent SADP can be used for contact holes multiplication. However, a combination of two immersion exposures, two spacer deposition processes, and two etch processes to reach the desired dimensions makes this process expensive and complicated. One alternative technique for contact hole multiplication is the use of an array of pillar patterns. Pillars, imaged with 193 immersion photolithography, can be uniformly deposited with spacer materials until a hole is formed in the center of 4 pillars. Selective removal of the pillar core gives a reversal of phases, a contact hole where there was once a pillar. However, the highly conformal nature of conventional spacer materials causes a problem with this application. The new holes, formed between 4 pillars, by this method have a tendency to be imperfect and not circular. To improve the contact hole circularity, this paper presents the use of both conventional spacer material and soft spacer materials. Application of soft spacer materials can be achieved by an existing coating track without additional cost burden to the device manufacturers.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Technical Reports Server (NTRS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-01-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Astrophysics Data System (ADS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-11-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Optimizing Soft Tissue Management and Spacer Design in Segmental Bone Defects

DTIC Science & Technology

2016-12-01

proximal and distal bone segments. 3. Debride 10 grams of tibialis anterior and gastrocnemius muscles. 4. Place an interlocking intramedullary nail ...using a custom spacer to maintain 5-cm defect length. 5. Place a pre-molded 5 cm long x 2 cm diameter PMMA spacer around the nail in the defect. 6...tibia. 3. Open the IM surrounding the PMMA spacer using a “bomb bay door opening”. 4. Remove the spacer without damaging the membrane or nail . 5

Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, J.A.; Doi, I.; Swart, J.W

2003-03-15

Silicon oxynitride (SiO{sub x}N{sub y}) and nitride (SiN{sub x}) insulators have been deposited or grown (with or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) plasmas on Si and/or GaAs substrates at room temperature (20 deg. C) and low pressures (up to 10 mTorr). Chemical bonding characteristics of the SiO{sub x}N{sub y} and SiN{sub x} films were evaluated using Fourier transform infrared spectrometry (FTIR). The profile measurements determined the film thickness, the deposition (or oxidation) rate and the etch rates in buffered HF (BHF). The refractive indexes and the thicknesses were determined by ellipsometry. The effectivemore » interface charge densities were determined by capacitance-voltage (C-V) measurements. With these processes and analyses, different films were obtained and optimized. Suitable gate insulators for metal-insulator-semiconductor (MIS) devices with low interface charge densities were developed: (a) SiN{sub x} films deposited by ECR-chemical vapor deposition (ECR-PECVD) on GaAs substrates; (b) SiO{sub x}N{sub y} insulators obtained by low-energy molecular nitrogen ion ({sup 28}N{sub 2}{sup +}) implantation (energy of 5 keV and dose of 1x10{sup 15}/cm{sup 2}) in Si substrates prior to high-density O{sub 2} ECR plasma oxidation; and (c) SiO{sub x}N{sub y} insulators grown (without silane in the gas mixture) by O{sub 2}/N{sub 2}/Ar ECR plasma 'oxynitridation'. Furthermore, some SiN{sub x} films also present very good masking characteristics for local oxidation of silicon process.« less

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

NASA Astrophysics Data System (ADS)

Dagytė, Vilgailė; Barrigón, Enrique; Zhang, Wei; Zeng, Xulu; Heurlin, Magnus; Otnes, Gaute; Anttu, Nicklas; Borgström, Magnus T.

2017-12-01

Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.

The CRISPR Spacer Space Is Dominated by Sequences from Species-Specific Mobilomes.

PubMed

Shmakov, Sergey A; Sitnik, Vassilii; Makarova, Kira S; Wolf, Yuri I; Severinov, Konstantin V; Koonin, Eugene V

2017-09-19

Clustered regularly interspaced short palindromic repeats and CRISPR-associated protein (CRISPR-Cas) systems store the memory of past encounters with foreign DNA in unique spacers that are inserted between direct repeats in CRISPR arrays. For only a small fraction of the spacers, homologous sequences, called protospacers, are detectable in viral, plasmid, and microbial genomes. The rest of the spacers remain the CRISPR "dark matter." We performed a comprehensive analysis of the spacers from all CRISPR- cas loci identified in bacterial and archaeal genomes, and we found that, depending on the CRISPR-Cas subtype and the prokaryotic phylum, protospacers were detectable for 1% to about 19% of the spacers (~7% global average). Among the detected protospacers, the majority, typically 80 to 90%, originated from viral genomes, including proviruses, and among the rest, the most common source was genes that are integrated into microbial chromosomes but are involved in plasmid conjugation or replication. Thus, almost all spacers with identifiable protospacers target mobile genetic elements (MGE). The GC content, as well as dinucleotide and tetranucleotide compositions, of microbial genomes, their spacer complements, and the cognate viral genomes showed a nearly perfect correlation and were almost identical. Given the near absence of self-targeting spacers, these findings are most compatible with the possibility that the spacers, including the dark matter, are derived almost completely from the species-specific microbial mobilomes. IMPORTANCE The principal function of CRISPR-Cas systems is thought to be protection of bacteria and archaea against viruses and other parasitic genetic elements. The CRISPR defense function is mediated by sequences from parasitic elements, known as spacers, that are inserted into CRISPR arrays and then transcribed and employed as guides to identify and inactivate the cognate parasitic genomes. However, only a small fraction of the CRISPR spacers

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

2016-10-01

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Technology of GaAs metal-oxide-semiconductor solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1977-01-01

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Measurements and sensitivities of LWR in poly spacers

NASA Astrophysics Data System (ADS)

Ayal, Guy; Shauly, Eitan; Levi, Shimon; Siany, Amit; Adan, Ofer; Shacham-Diamand, Yosi

2010-03-01

LER and LWR have long been considered a primary issue in process development and monitoring. Development of a low power process flavors emphasizes the effect of LER, LWR on different aspects of the device. Gate level performance, particularly leakage current at the front end of line, resistance and reliability in the back-end layers. Traditionally as can be seen in many publications, for the front end of line the focus is mainly on Poly and Active area layers. Poly spacers contribution to the gate leakage, for example, is rarely discussed. Following our research done on sources of gate leakage, we found leakage current (Ioff) in some processes to be highly sensitive to changes in the width of the Poly spacers - even more strongly to the actual Poly gate CDs. Therefore we decided to measure Poly spacers LWR, its correlation to the LWR in the poly, and its sensitivity to changes in layout and OPC. In our last year publication, we defined the terms LLER (Local Line Edge Roughness) and LLWR (Local Line Width Roughness). The local roughness is measured as the 3-sigma value of the line edge/width in a 5-nm segment around the measurement point. We will use these terms in this paper to evaluate the Poly roughness impact on Poly spacer's roughness. A dedicated test chip was designed for the experiments, having various transistors layout configurations with different densities to cover the all range of process design rules. Applied Materials LER and LWR innovative algorithms were used to measure and characterize the spacer roughness relative to the distance from the active edges and from other spaces. To accurately measure all structures in a reasonable time, the recipes were automatically generated from CAD. On silicon, after poly spacers generation, the transistors no longer resemble the Poly layer CAD layout, their morphology is different compared with Photo/Etch traditional structures , and dimensions vary significantly. In this paper we present metrology and

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1983-01-01

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

The CRISPR Spacer Space Is Dominated by Sequences from Species-Specific Mobilomes

PubMed Central

Shmakov, Sergey A.; Sitnik, Vassilii; Makarova, Kira S.; Wolf, Yuri I.; Severinov, Konstantin V.

2017-01-01

ABSTRACT Clustered regularly interspaced short palindromic repeats and CRISPR-associated protein (CRISPR-Cas) systems store the memory of past encounters with foreign DNA in unique spacers that are inserted between direct repeats in CRISPR arrays. For only a small fraction of the spacers, homologous sequences, called protospacers, are detectable in viral, plasmid, and microbial genomes. The rest of the spacers remain the CRISPR “dark matter.” We performed a comprehensive analysis of the spacers from all CRISPR-cas loci identified in bacterial and archaeal genomes, and we found that, depending on the CRISPR-Cas subtype and the prokaryotic phylum, protospacers were detectable for 1% to about 19% of the spacers (~7% global average). Among the detected protospacers, the majority, typically 80 to 90%, originated from viral genomes, including proviruses, and among the rest, the most common source was genes that are integrated into microbial chromosomes but are involved in plasmid conjugation or replication. Thus, almost all spacers with identifiable protospacers target mobile genetic elements (MGE). The GC content, as well as dinucleotide and tetranucleotide compositions, of microbial genomes, their spacer complements, and the cognate viral genomes showed a nearly perfect correlation and were almost identical. Given the near absence of self-targeting spacers, these findings are most compatible with the possibility that the spacers, including the dark matter, are derived almost completely from the species-specific microbial mobilomes. PMID:28928211

Orthognathic model surgery with LEGO key-spacer.

PubMed

Tsang, Alfred Chee-Ching; Lee, Alfred Siu Hong; Li, Wai Keung

2013-12-01

A new technique of model surgery using LEGO plates as key-spacers is described. This technique requires less time to set up compared with the conventional plaster model method. It also retains the preoperative setup with the same set of models. Movement of the segments can be measured and examined in detail with LEGO key-spacers. Copyright © 2013 American Association of Oral and Maxillofacial Surgeons. Published by Elsevier Inc. All rights reserved.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

PubMed Central

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-01-01

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. PMID:22314357

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

PubMed

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Hydrogel Spacer Prospective Multicenter Randomized Controlled Pivotal Trial: Dosimetric and Clinical Effects of Perirectal Spacer Application in Men Undergoing Prostate Image Guided Intensity Modulated Radiation Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mariados, Neil, E-mail: nmariados@ampofny.com; Sylvester, John; Shah, Dhiren

2015-08-01

Purpose: Perirectal spacing, whereby biomaterials are placed between the prostate and rectum, shows promise in reducing rectal dose during prostate cancer radiation therapy. A prospective multicenter randomized controlled pivotal trial was performed to assess outcomes following absorbable spacer (SpaceOAR system) implantation. Methods and Materials: Overall, 222 patients with clinical stage T1 or T2 prostate cancer underwent computed tomography (CT) and magnetic resonance imaging (MRI) scans for treatment planning, followed with fiducial marker placement, and were randomized to receive spacer injection or no injection (control). Patients received postprocedure CT and MRI planning scans and underwent image guided intensity modulated radiation therapymore » (79.2 Gy in 1.8-Gy fractions). Spacer safety and impact on rectal irradiation, toxicity, and quality of life were assessed throughout 15 months. Results: Spacer application was rated as “easy” or “very easy” 98.7% of the time, with a 99% hydrogel placement success rate. Perirectal spaces were 12.6 ± 3.9 mm and 1.6 ± 2.0 mm in the spacer and control groups, respectively. There were no device-related adverse events, rectal perforations, serious bleeding, or infections within either group. Pre-to postspacer plans had a significant reduction in mean rectal V70 (12.4% to 3.3%, P<.0001). Overall acute rectal adverse event rates were similar between groups, with fewer spacer patients experiencing rectal pain (P=.02). A significant reduction in late (3-15 months) rectal toxicity severity in the spacer group was observed (P=.04), with a 2.0% and 7.0% late rectal toxicity incidence in the spacer and control groups, respectively. There was no late rectal toxicity greater than grade 1 in the spacer group. At 15 months 11.6% and 21.4% of spacer and control patients, respectively, experienced 10-point declines in bowel quality of life. MRI scans at 12 months verified spacer absorption. Conclusions: Spacer

Hydrogel Spacer Prospective Multicenter Randomized Controlled Pivotal Trial: Dosimetric and Clinical Effects of Perirectal Spacer Application in Men Undergoing Prostate Image Guided Intensity Modulated Radiation Therapy.

PubMed

Mariados, Neil; Sylvester, John; Shah, Dhiren; Karsh, Lawrence; Hudes, Richard; Beyer, David; Kurtzman, Steven; Bogart, Jeffrey; Hsi, R Alex; Kos, Michael; Ellis, Rodney; Logsdon, Mark; Zimberg, Shawn; Forsythe, Kevin; Zhang, Hong; Soffen, Edward; Francke, Patrick; Mantz, Constantine; Rossi, Peter; DeWeese, Theodore; Hamstra, Daniel A; Bosch, Walter; Gay, Hiram; Michalski, Jeff

2015-08-01

Perirectal spacing, whereby biomaterials are placed between the prostate and rectum, shows promise in reducing rectal dose during prostate cancer radiation therapy. A prospective multicenter randomized controlled pivotal trial was performed to assess outcomes following absorbable spacer (SpaceOAR system) implantation. Overall, 222 patients with clinical stage T1 or T2 prostate cancer underwent computed tomography (CT) and magnetic resonance imaging (MRI) scans for treatment planning, followed with fiducial marker placement, and were randomized to receive spacer injection or no injection (control). Patients received postprocedure CT and MRI planning scans and underwent image guided intensity modulated radiation therapy (79.2 Gy in 1.8-Gy fractions). Spacer safety and impact on rectal irradiation, toxicity, and quality of life were assessed throughout 15 months. Spacer application was rated as "easy" or "very easy" 98.7% of the time, with a 99% hydrogel placement success rate. Perirectal spaces were 12.6 ± 3.9 mm and 1.6 ± 2.0 mm in the spacer and control groups, respectively. There were no device-related adverse events, rectal perforations, serious bleeding, or infections within either group. Pre-to postspacer plans had a significant reduction in mean rectal V70 (12.4% to 3.3%, P<.0001). Overall acute rectal adverse event rates were similar between groups, with fewer spacer patients experiencing rectal pain (P=.02). A significant reduction in late (3-15 months) rectal toxicity severity in the spacer group was observed (P=.04), with a 2.0% and 7.0% late rectal toxicity incidence in the spacer and control groups, respectively. There was no late rectal toxicity greater than grade 1 in the spacer group. At 15 months 11.6% and 21.4% of spacer and control patients, respectively, experienced 10-point declines in bowel quality of life. MRI scans at 12 months verified spacer absorption. Spacer application was well tolerated. Increased perirectal space reduced

Long-term radiation effects on GaAs solar cell characteristics

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Doviak, M. J.

1978-01-01

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

GaAs thin films and methods of making and using the same

DOEpatents

Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

2016-06-14

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhusan Singh, Braj; Chaudhary, Sujeet

2012-09-15

The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thinmore » MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 Degree-Sign C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.« less

Outcomes of Articulating Spacers With Autoclaved Femoral Components in Total Knee Arthroplasty Infection.

PubMed

Goltz, Daniel E; Sutter, E Grant; Bolognesi, Michael P; Wellman, Samuel S

2018-03-30

In 2-stage revision of total knee arthroplasty (TKA) infection, articulating antibiotic spacers show similar eradication rates and superior range of motion compared with static spacers. This study evaluated infection control and other outcomes in articulating spacers with an autoclaved index femoral component. We reviewed 59 patients who underwent 2-stage treatment of TKA infection using articulating antibiotic spacers with an autoclaved femoral component with at least 2-year follow-up (mean: 5.0 years) from spacer placement. Reinfection was defined as any subsequent infection; recurrence was defined as reinfection with the same organism, need for chronic antibiotics, or conversion directly to amputation/arthrodesis. Nine patients (15%) experienced a recurrence and 22 patients (37%) experienced a reinfection. Incidence of diabetes mellitus was significantly higher in patients who became reinfected. Other comorbidities, revision history, prior spacer, or presence of virulent organisms did not predict infection recurrence. Forty-seven spacers underwent reimplantation, 6 (13%) of these went on to above-knee amputation, 6 (13%) received another 2-stage procedure, and 3 (6%) underwent subsequent irrigation and debridement. Three patients (5%) proceeded directly from spacer to above-knee amputation (2) or arthrodesis (1). Nine spacers (15%) in 7 patients were retained indefinitely (mean: 3.4 years), with overall good motion and function. Accounting for methodology, articulating spacers with autoclaved femoral components provide similar infection control to previous reports. Most patients with reinfection grew different organisms compared with initial infection, suggesting that some subsequent infections may be host related. Some patients retained spacers definitively with overall good patient satisfaction. Copyright © 2018 Elsevier Inc. All rights reserved.

The growth of low band-gap InAs on (111)B GaAs substrates

NASA Technical Reports Server (NTRS)

Welser, R. E.; Guido, L. J.

1995-01-01

The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have

Experimental Study of Two Phase Flow Behavior Past BWR Spacer Grids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ratnayake, Ruwan K.; Hochreiter, L.E.; Ivanov, K.N.

2002-07-01

Performance of best estimate codes used in the nuclear industry can be significantly improved by reducing the empiricism embedded in their constitutive models. Spacer grids have been found to have an important impact on the maximum allowable Critical Heat Flux within the fuel assembly of a nuclear reactor core. Therefore, incorporation of suitable spacer grids models can improve the critical heat flux prediction capability of best estimate codes. Realistic modeling of entrainment behavior of spacer grids requires understanding the different mechanisms that are involved. Since visual information pertaining to the entrainment behavior of spacer grids cannot possibly be obtained frommore » operating nuclear reactors, experiments have to be designed and conducted for this specific purpose. Most of the spacer grid experiments available in literature have been designed in view of obtaining quantitative data for the purpose of developing or modifying empirical formulations for heat transfer, critical heat flux or pressure drop. Very few experiments have been designed to provide fundamental information which can be used to understand spacer grid effects and phenomena involved in two phase flow. Air-water experiments were conducted to obtain visual information on the two-phase flow behavior both upstream and downstream of Boiling Water Reactor (BWR) spacer grids. The test section was designed and constructed using prototypic dimensions such as the channel cross-section, rod diameter and other spacer grid configurations of a typical BWR fuel assembly. The test section models the flow behavior in two adjacent sub channels in the BWR core. A portion of a prototypic BWR spacer grid accounting for two adjacent channels was used with industrial mild steel rods for the purpose of representing the channel internals. Symmetry was preserved in this practice, so that the channel walls could effectively be considered as the channel boundaries. Thin films were established on the rod

Growth and characteristics of p-type doped GaAs nanowire

NASA Astrophysics Data System (ADS)

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-05-01

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Sulfur doping of GaAs with (NH4)2Sx solution

NASA Astrophysics Data System (ADS)

Lee, Jong-Lam

1999-01-01

A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

Impact of ZnO embedded feed spacer on biofilm development in membrane systems.

PubMed

Ronen, Avner; Semiat, Raphael; Dosoretz, Carlos G

2013-11-01

The concept of suppressing biofouling formation using an antibacterial feed spacer was investigated in a bench scale-cross flow system mimicking a spiral wound membrane configuration. An antibacterial composite spacer containing zinc oxide-nanoparticles was constructed by modification of a commercial polypropylene feed spacer using sonochemical deposition. The ability of the modified spacers to repress biofilm development on membranes was evaluated in flow-through cells simulating the flow conditions in commercial spiral wound modules. The experiments were performed at laminar flow (Re = 300) with a 200 kDa molecular weight cut off polysulfone ultrafiltration membrane using Pseudomonas putida S-12 as model biofilm bacteria. The modified spacers reduced permeate flux decrease at least by 50% compared to the unmodified spacers (control). The physical properties of the modified spacer and biofilm development were evaluated using high resolution/energy dispersive spectrometry-scanning electron microscopy, atomic force microscopy and confocal laser scanning microscopy imaging (HRSEM, EDS, AFM and CLSM). HRSEM images depicted significantly less bacteria attached to the membranes exposed to the modified spacer, mainly scattered and in a sporadic monolayer structure. AFM analysis indicated the influence of the modification on the spacer surface including a phase change on the upper surface. Dead-live staining assay by CLSM indicated that most of the bacterial cells attached on the membranes exposed to the modified spacer were dead in contrast to a developed biofilm which was predominant in the control samples. Copyright © 2013 Elsevier Ltd. All rights reserved.

Relation between trinucleotide GAA repeat length and sensory neuropathy in Friedreich's ataxia.

PubMed

Santoro, L; De Michele, G; Perretti, A; Crisci, C; Cocozza, S; Cavalcanti, F; Ragno, M; Monticelli, A; Filla, A; Caruso, G

1999-01-01

To verify if GAA expansion size in Friedreich's ataxia could account for the severity of sensory neuropathy. Retrospective study of 56 patients with Friedreich's ataxia selected according to homozygosity for GAA expansion and availability of electrophysiological findings. Orthodromic sensory conduction velocity in the median nerve was available in all patients and that of the tibial nerve in 46 of them. Data of sural nerve biopsy and of a morphometric analysis were available in 12 of the selected patients. The sensory action potential amplitude at the wrist (wSAP) and at the medial malleolus (m mal SAP) and the percentage of myelinated fibres with diameter larger than 7, 9, and 11 microm in the sural nerve were correlated with disease duration and GAA expansion size on the shorter (GAA1) and larger (GAA2) expanded allele in each pair. Pearson's correlation test and stepwise multiple regression were used for statistical analysis. A significant inverse correlation between GAA1 size and wSAP, m mal SAP, and percentage of myelinated fibres was found. Stepwise multiple regression showed that GAA1 size significantly affects electrophysiological and morphometric data, whereas duration of disease has no effect. The data suggest that the severity of the sensory neuropathy is probably genetically determined and that it is not progressive.

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

PubMed

Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

2017-11-10

Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

The interobserver-validated relevance of intervertebral spacer materials in MRI artifacting

PubMed Central

Heidrich, G.; Bruening, T.; Krefft, S.; Buchhorn, G.; Klinger, H.M.

2006-01-01

Intervertebral spacers for anterior spine fusion are made of different materials, such as titanium, carbon or cobalt-chrome, which can affect the post-fusion MRI scans. Implant-related susceptibility artifacts can decrease the quality of MRI scans, thwarting proper evaluation. This cadaver study aimed to demonstrate the extent that implant-related MRI artifacting affects the post-fusion evaluation of intervertebral spacers. In a cadaveric porcine spine, we evaluated the post-implantation MRI scans of three intervertebral spacers that differed in shape, material, surface qualities and implantation technique. A spacer made of human cortical bone was used as a control. The median sagittal MRI slice was divided into 12 regions of interest (ROI). No significant differences were found on 15 different MRI sequences read independently by an interobserver-validated team of specialists (P>0.05). Artifact-affected image quality was rated on a score of 0-1-2. A maximum score of 24 points (100%) was possible. Turbo spin echo sequences produced the best scores for all spacers and the control. Only the control achieved a score of 100%. The carbon, titanium and cobalt-chrome spacers scored 83.3, 62.5 and 50%, respectively. Our scoring system allowed us to create an implant-related ranking of MRI scan quality in reference to the control that was independent of artifact dimensions. The carbon spacer had the lowest percentage of susceptibility artifacts. Even with turbo spin echo sequences, the susceptibility artifacts produced by the metallic spacers showed a high degree of variability. Despite optimum sequencing, implant design and material are relevant factors in MRI artifacting. PMID:16463200

Demonstration of Hybrid Multilayer Insulation for Fixed Thickness Applications

NASA Technical Reports Server (NTRS)

Johnson, Wesley; Fesmire, James; Heckle, Wayne

2015-01-01

Once on orbit, high performing insulation systems for cryogenic systems need just as good radiation (optical) properties as conduction properties. This requires the use of radiation shields with low conductivity spacers in between. By varying the height and cross-sectional area of the spacers between the radiation shields, the relative radiation and conduction heat transfers can be manipulated. However, in most systems, there is a fixed thickness or volume allocated to the insulation. In order to understand how various combinations of different multilayer insulation (MLI) systems work together and further validate thermal models of such a hybrid MLI set up, test data is needed. The MLI systems include combinations of Load Bearing MLI (LB-MLI) and traditional MLI. To further simulate the space launch vehicle case wherein both ambient pressure and vacuum environments are addressed, different cold-side thermal insulation substrates were included for select tests.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

NASA Astrophysics Data System (ADS)

Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

1982-04-01

Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

Interface demarcation in GaAs by current pulsing

NASA Technical Reports Server (NTRS)

Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

1990-01-01

GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

Microwave GaAs Integrated Circuits On Quartz Substrates

NASA Technical Reports Server (NTRS)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

NASA Astrophysics Data System (ADS)

Gold, A.

1991-10-01

Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

Apparatus and methods for aligning holes through wheels and spacers and stacking the wheels and spacers to form a turbine rotor

DOEpatents

Berry, Robert Randolph; Palmer, Gene David; Wilson, Ian David

2000-01-01

A gas turbine rotor stacking fixture includes upstanding bolts for reception in aligned bolt holes in superposed aft disk, wheels and spacers and upstanding alignment rods received in openings of the disk, wheels and spacers during the rotor stacking assembly. The axially registering openings enable insertion of thin-walled tubes circumferentially about the rim of the rotor, with tight tolerances to the openings to provide supply and return steam for cooling buckets. The alignment rods have radial dimensions substantially less than their dimensions in a circumferential direction to allow for radial opening misalignment due to thermal expansion, tolerance stack-up and wheel-to-spacer mismatch due to rabbet mechanical growth. The circumferential dimension of the alignment rods affords tightly toleranced alignment of the openings through which the cooling tubes are installed.

Advanced GaAs Process Modeling. Volume 1

DTIC Science & Technology

1989-05-01

COSATI CODES 18 . SUBJECT TERMS (Continue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Gallium Arsenide, MESFET, Process...Background 9 3.2 Model Calculations 10 3.3 Conclusions 17 IV. ION-IMPLANTATION INTO GaAs PROFILE DETERMINATION 18 4.1 Ion Implantation Profile...Determination in GaAs 18 4.1.1. Background 18 4.1.2. Experimental Measurements 20 4.1.3. Results 22 4.1.3.1 Ion-Energy Dependence 22 4.1.3.2. Tilt and Rotation

Aggregation Strength Tuning in Difluorobenzoxadiazole-Based Polymeric Semiconductors for High-Performance Thick-Film Polymer Solar Cells.

PubMed

Chen, Peng; Shi, Shengbin; Wang, Hang; Qiu, Fanglong; Wang, Yuxi; Tang, Yumin; Feng, Jian-Rui; Guo, Han; Cheng, Xing; Guo, Xugang

2018-06-27

High-performance polymer solar cells (PSCs) with thick active layers are essential for large-scale production. Polymer semiconductors exhibiting a temperature-dependent aggregation property offer great advantages toward this purpose. In this study, three difluorobenzoxadiazole (ffBX)-based donor polymers, PffBX-T, PffBX-TT, and PffBX-DTT, were synthesized, which contain thiophene (T), thieno[3,2- b]thiophene (TT), and dithieno[3,2- b:2',3'- d]thiophene (DTT) as the π-spacers, respectively. Temperature-dependent absorption spectra reveal that the aggregation strength increases in the order of PffBX-T, PffBX-TT, and PffBX-DTT as the π-spacer becomes larger. PffBX-TT with the intermediate aggregation strength enables well-controlled disorder-order transition in the casting process of blend film, thus leading to the best film morphology and the highest performance in PSCs. Thick-film PSCs with an average power conversion efficiency (PCE) of 8.91% and the maximum value of 9.10% are achieved using PffBX-TT:PC 71 BM active layer with a thickness of 250 nm. The neat film of PffBX-TT also shows a high hole mobility of 1.09 cm 2 V -1 s -1 in organic thin-film transistors. When PffBX-DTT and PffBX-T are incorporated into PSCs utilizing PC 71 BM acceptor, the average PCE decreases to 6.54 and 1.33%, respectively. The performance drop mainly comes from reduced short-circuit current, as a result of nonoptimal blend film morphology caused by a less well-controlled film formation process. A similar trend was also observed in nonfullerene type thick-film PSCs using IT-4F as the electron acceptor. These results show the significance of polymer aggregation strength tuning toward optimal bulk heterojunction film morphology using ffBX-based polymer model system. The study demonstrates that adjusting π-spacer is an effective method, in combination with other important approaches such as alkyl chain optimization, to generate high-performance thick-film PSCs which are critical for

Optimized Design of Spacer in Electrodialyzer Using CFD Simulation Method

NASA Astrophysics Data System (ADS)

Jia, Yuxiang; Yan, Chunsheng; Chen, Lijun; Hu, Yangdong

2018-06-01

In this study, the effects of length-width ratio and diversion trench of the spacer on the fluid flow behavior in an electrodialyzer have been investigated through CFD simulation method. The relevant information, including the pressure drop, velocity vector distribution and shear stress distribution, demonstrates the importance of optimized design of the spacer in an electrodialysis process. The results show width of the diversion trench has a great effect on the fluid flow compared with length. Increase of the diversion trench width could strength the fluid flow, but also increase the pressure drop. Secondly, the dead zone of the fluid flow decreases with increase of length-width ratio of the spacer, but the pressure drop increases with the increase of length-width ratio of the spacer. So the appropriate length-width ratio of the space should be moderate.

Rare-earth gate oxides for GaAs MOSFET application

NASA Astrophysics Data System (ADS)

Kwon, Kwang-Ho; Yang, Jun-Kyu; Park, Hyung-Ho; Kim, Jongdae; Roh, Tae Moon

2006-08-01

Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2O 3, (Gd xLa 1- x) 2O 3, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd xLa 1- x) 2O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2O 3. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2. Energy band parameters such as Δ EC, Δ EV, and Eg were effectively controlled by the film composition.

Failure Mechanisms of GaAs Transistors - A Literature Survey

DTIC Science & Technology

1990-03-01

doping profile cannot be as sharp as with epitaxial methods. This is the result of the statistics of the implantation and the general diffusion that...Speed GaAs Logic Gates 5.1 GaAs PLANAR TRANSITOR STRUCTURES USED IN IC’S Some planar transistor structures used in IC’s with examples of the

Method of forming a spacer for field emission flat panel displays

DOEpatents

Bernhardt, Anthony F.; Contolini, Robert J.

1997-01-01

Spacers for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate.

Wheeze in childhood: is the spacer good enough?

PubMed Central

Rajkumar, Veena; Rajendra, Barathi; How, Choon How; Ang, Seng Bin

2014-01-01

Max was treated with SABA using an MDI and spacer with facemask and responded well to the initial treatment. You explained to the parents that nebulisers are neither required nor recommended in the treatment of wheezing in their child’s situation. You advised the parents on the proper technique of MDI use with spacer and facemask, as well as care of the equipment. You also gave them a clearly written action plan regarding the efficient management of the next episode of wheeze with MDI and spacer. You further explained the side effects of oral bronchodilators and nebulisers, and why you refrained from using them. Max was given a follow-up appointment to assess his progress, and his parents were advised on the situations when they should go to a doctor or the emergency department. PMID:25631964

Heterogeneous diversity of spacers within CRISPR

NASA Astrophysics Data System (ADS)

Deem, Michael; He, Jiankui

2011-03-01

Clustered regularly interspaced short palindromic repeats (CRISPR) in bacterial and archaeal DNA have recently been shown to be a new type of anti-viral immune system in these organisms. We here study the diversity of spacers in CRISPR under selective pressure. We propose a population dynamics model that explains the biological observation that the leader-proximal end of CRISPR is more diversified and the leader-distal end of CRISPR is more conserved. This result is shown to be in agreement with recent experiments. Our results show that the CRISPR spacer structure is influenced by and provides a record of the viral challenges that bacteria face. 1) J. He and M. W. Deem, Phys. Rev. Lett. 105 (2010) 128102

Tube support grid and spacer therefor

DOEpatents

Ringsmuth, Richard J.; Kaufman, Jay S.

1986-01-01

A tube support grid and spacers therefor provide radially inward preloading of heat exchange tubes to minimize stress upon base welds due to differential thermal expansion. The grid comprises a concentric series of rings and spacers with opposing concave sides for conforming to the tubes and V-shaped ends to provide resilient flexibility. The flexibility aids in assembly and in transmitting seismic vibrations from the tubes to a shroud. The tube support grid may be assembled in place to achieve the desired inwardly radial preloading of the heat exchange tubes. Tab and slot assembly further minimizes stresses in the system. The radii of the grid rings may be preselected to effect the desired radially inward preloading.

Laser Induced Electrodeposition on Polyimide and GaAs Substrates

DTIC Science & Technology

1983-10-01

6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Cathodoluminescence Characterization of Ion Implanted GaAs.

DTIC Science & Technology

1980-03-01

technique that can be used to characterize the semiconductor device "in situ" before further processing can save the Air Force valuable time as well...Patterson Air Force Base,Ohio i! i ill i I ;Wow AFIT/DS/PH/80- I.i1I LEVELOO CATHODOLUMINESCENCE CHARACTERIZATION OF ION IPLANTED GaAs D I SSERUrAT ION...CATODOLUMINESCENCE CHARACTERIZATION .’ a .... OF ION IMPLANTED GaAs’ - .. .. Dtriy’ t’ c:’/ A’: t 1. - Cc;-,P by an i’or Milton L one B.S., M.S. Major USAF Approved

Amplification in Double Heterostructure GaAs Lasers.

DTIC Science & Technology

1981-03-15

done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

GaAs Surface Passivation for Device Applications.

DTIC Science & Technology

1981-12-01

Ga203.’" . QI. a) / b) x 2.5 •• 24 21 18 As3d a) b) x 2. / 0 II 2 46 43 40 BINDING ENERGY (eV) Fig. 3 XPS spectra from a Ga2O3 covered GaAs surface of Ga...wU 24 21 Gas 18 SAs3d As2O3 ) .. 46 43 40 BINDING ENERGY (e) Fig. 4 XPS spectra from a AsJ03- Ga2O3 covered GaAs surface of Ga 3d (upper panel) and As

Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

1986-01-01

A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, M. Y.; Haas, T. W.

1990-06-01

We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

COMPARISON OF PRESSURE DROP PRODUCED BY SPIRAL WRAPS, COOKIE CUTTERS AND OTHER ROD BUNDLE SPACERS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noyes, R.C.

The problem of predicting pressure drop due to various fuel bundle spacers is considered in some detail. Three sets of experimental data are reviewed and presented in reduced form. These data are compared to several semitheoretical approaches to pressure drop prediction and a best method is selected to make the required predictions. The comparison between predictions for the ASCR spiral wrap spacer and cookie cutter spacer shows that both types of spacers produce about the same pressure drop. Spacer pressure drop is shown to be strongly dependent on spacer frontal area and pitch. (auth)

Interface structure and composition of MoO3/GaAs(0 0 1)

NASA Astrophysics Data System (ADS)

Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

2018-04-01

We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

Annular flow in rod-bundle: Effect of spacer on disturbance waves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pham, Son H.; Kunugi, Tomoaki

2016-08-01

A high-speed camera technique is used to study the effect of spacers on the disturbance waves present in annular two-phase flow within a rod-bundle geometry. Images obtained using a backlight configuration to visualize the spacer-wave interactions at the micro-scale resolution (in time and space) are discussed. This paper also presents additional images obtained using a reflected light configuration which provides new observations of the disturbance waves. These images show the separation effect caused by the spacer on the liquid film in which the size of generated liquid droplets can be controlled by the gas superficial velocity. Furthermore, the data confirmmore » that the spacer breaks the circumferential coherent structures of the waves.« less

Method of forming a spacer for field emission flat panel displays

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1997-08-19

Spacers are disclosed for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate. 3 figs.

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Intramedullary rod and cement static spacer construct in chronically infected total knee arthroplasty.

PubMed

Kotwal, Suhel Y; Farid, Yasser R; Patil, Suresh S; Alden, Kris J; Finn, Henry A

2012-02-01

Two-stage reimplantation, with interval antibiotic-impregnated cement spacer, is the preferred treatment of prosthetic knee joint infections. In medically compromised hosts with prior failed surgeries, the outcomes are poor. Articulating spacers in such patients render the knee unstable; static spacers have risks of dislocation and extensor mechanism injury. We examined 58 infected total knee arthroplasties with extensive bone and soft tissue loss, treated with resection arthroplasty and intramedullary tibiofemoral rod and antibiotic-laden cement spacer. Thirty-seven patients underwent delayed reimplantation. Most patients (83.8%) were free from recurrent infection at mean follow-up of 29.4 months. Reinfection occurred in 16.2%, which required debridement. Twenty-one patients with poor operative risks remained with the spacer for 11.4 months. All patients, during spacer phase, had brace-free ambulation with simulated tibiofemoral fusion, without bone loss or loss of limb length. Copyright © 2012 Elsevier Inc. All rights reserved.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Separator-spacer for electrochemical systems

DOEpatents

Grimes, Patrick G.; Einstein, Harry; Newby, Kenneth R.; Bellows, Richard J.

1983-08-02

An electrochemical cell construction features a novel co-extruded plastic electrode in an interleaved construction with a novel integral separator-spacer. Also featured is a leak and impact resistant construction for preventing the spill of corrosive materials in the event of rupture.

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model.

PubMed

Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Te Riele, Hein; Pook, Mark A

2012-04-01

Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. Copyright © 2012 Elsevier Inc. All rights reserved.

The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model

PubMed Central

Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; te Riele, Hein; Pook, Mark A.

2013-01-01

Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. PMID:22289650

Oxygen in GaAs - Direct and indirect effects

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

1984-01-01

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Effect of Sb thickness on the performance of bialkali-antimonide photocathodes

DOE PAGES

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Hernandez-Garcia, Carlos; ...

2016-01-06

The alkali species Cs and K were codeposited using an effusion source, onto relatively thick layers of Sb (50 nm to ~7 μm) grown on GaAs and Ta substrates inside a vacuum chamber that was baked and not-vented, and also baked and vented with clean dry nitrogen but not rebaked. The characteristics of the Sb films, including sticking probability, surface roughness, grain size, and crystal properties were very different for these conditions, yet comparable values of photocathode yield [or quantum efficiency (QE)] at 284 V were obtained following codeposition of the alkali materials. Photocathodes manufactured with comparatively thick Sb layersmore » exhibited the highest QE and the best 1/e lifetime. As last, the authors speculate that the alkali codeposition enabled optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali materials.« less

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

GaAs Spectrometer for Electron Spectroscopy at Europa

NASA Astrophysics Data System (ADS)

Lioliou, G.; Barnett, A. M.

2016-12-01

We propose a GaAs based electron spectrometer for a hypothetical future mission orbiting Europa. Previous observations at Europa's South Pole with the Hubble Space Telescope of hydrogen Lyman-α and oxygen OI 130.4 nm emissions were consistent with water vapor plumes [Roth et al., 2014, Science 343, 171]. Future observations and analysis of plumes on Europa could provide information about its subsurface structure and the distribution of liquid water within its icy shells [Rhoden at al. 2015, Icarus 253, 169]. In situ low energy (1keV - 100keV) electron spectroscopy along with UV imaging either in situ or with the Hubble Space Telescope Wide Field Camera 3 or similar would allow verification of the auroral observations being due to electron impact excitation of water vapor plumes. The proposed spectrometer includes a novel GaAs p+-i-n+ photodiode and a custom-made charge-sensitive preamplifier. The use of an early prototype GaAs detector for direct electron spectroscopy has already been demonstrated in ground based applications [Barnett et al., 2012, J. Instrum. 7, P09012]. Based on previous radiation hardness measurements of GaAs, the expected duration of the mission without degradation of the detector performance is estimated to be 4 months. Simulations and laboratory experiments characterising the detection performance of the proposed system are presented.

Photo-recovery of electron-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Meulenberg, Andrew

1995-01-01

The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

Success of Two-Stage Reimplantation in Patients Requiring an Interim Spacer Exchange.

PubMed

George, Jaiben; Miller, Evan M; Curtis, Gannon L; Klika, Alison K; Barsoum, Wael K; Mont, Michael A; Higuera, Carlos A

2018-03-23

Some patients undergoing a 2-stage revision for a periprosthetic joint infection require a repeat spacer in the interim (removal of existing spacer with insertion of a new spacer or spacer exchange) due to persistent infection. The objectives of this study are to (1) determine the factors associated with patients who receive a repeat spacer and (2) compare the infection-free survival (overall and stratified by joint type) of reimplantation in patients who did or did not receive a repeat spacer. From 2001 to 2014, 347 hip or knee 2-stage revisions that finally underwent reimplantation and had a minimum 2-year follow-up were identified. An interim spacer exchange was performed in 59 (17%) patients (exchange cohort). Patient-related and organism-related factors were compared between the exchange and non-exchange cohorts. Kaplan-Meier survival curves were performed to assess the success (absence of signs of infection, reoperation for infection, periprosthetic joint infection-related mortality) of both cohorts. Patients in the exchange group had higher comorbidity score (P = .020), prolonged time to reimplantation (P < .001), and higher prevalence of resistant organisms, though not statistically significant (P = .091). The 5-year infection-free survival rates were 64% (knee 62%, hip 64%) in the exchange cohort, and 78% (knee 77%, hip 78%) in the non-exchange cohort (P = .020). Patients requiring an interim spacer exchange were found to have more comorbidities, prolonged treatment period, and were more likely to be infected with a resistant organism. About one-third of such patients became reinfected within 5 years compared to only one-fifth of the patients without an interim spacer exchange. Copyright © 2018 Elsevier Inc. All rights reserved.

Defect interactions in GaAs single crystals

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Probing the excited subband dispersion of holes confined to GaAs wide quantum wells

NASA Astrophysics Data System (ADS)

Jo, Insun; Liu, Yang; Deng, H.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.

Owing to the strong spin-orbit coupling and their large effective mass, the two-dimensional (2D) holes in modulation-doped GaAs quantum wells provide a fertile test bed to study the rich physics of low-dimensional systems. In a wide quantum well, even at moderate 2D densities, the holes start to occupy the excited subband, a subband whose dispersion is very unusual and has a non-monotonic dependence on the wave vector. Here, we study a 2D hole system confined to a 40-nm-thick (001) GaAs quantum well and demonstrate that, via the application of both front and back gates, the density can be tuned in a wide range, between ~1 and 2 ×1011 cm-2. Using Fourier analysis of the low-field Shubnikov-de Haas oscillations, we investigate the population of holes and the spin-orbit interaction induced spin-splitting in different subbands. We discuss the results in light of self-consistent quantum calculations of magneto-oscillations. Work support by the DOE BES (DE-FG02-00-ER45841), the NSF (Grants DMR-1305691 and MRSEC DMR-1420541), the Gordon and Betty Moore Foundation (Grant GBMF4420), and Keck Foundation for experiments, and the NSF Grant DMR-1310199 for calculations.

Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

PubMed

Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

2011-02-09

We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

Transient GaAs plasmonic metasurfaces at terahertz frequencies

DOE PAGES

Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; ...

2016-12-09

Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to moremore » complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.« less

Spacer geometry and particle deposition in spiral wound membrane feed channels.

PubMed

Radu, A I; van Steen, M S H; Vrouwenvelder, J S; van Loosdrecht, M C M; Picioreanu, C

2014-11-01

Deposition of microspheres mimicking bacterial cells was studied experimentally and with a numerical model in feed spacer membrane channels, as used in spiral wound nanofiltration (NF) and reverse osmosis (RO) membrane systems. In-situ microscopic observations in membrane fouling simulators revealed formation of specific particle deposition patterns for different diamond and ladder feed spacer orientations. A three-dimensional numerical model combining fluid flow with a Lagrangian approach for particle trajectory calculations could describe very well the in-situ observations on particle deposition in flow cells. Feed spacer geometry, positioning and cross-flow velocity sensitively influenced the particle transport and deposition patterns. The deposition patterns were not influenced by permeate production. This combined experimental-modeling approach could be used for feed spacer geometry optimization studies for reduced (bio)fouling. Copyright © 2014 Elsevier Ltd. All rights reserved.

Two-stage revision of septic knee prosthesis with articulating knee spacers yields better infection eradication rate than one-stage or two-stage revision with static spacers.

PubMed

Romanò, C L; Gala, L; Logoluso, N; Romanò, D; Drago, L

2012-12-01

The best method for treating chronic periprosthetic knee infection remains controversial. Randomized, comparative studies on treatment modalities are lacking. This systematic review of the literature compares the infection eradication rate after two-stage versus one-stage revision and static versus articulating spacers in two-stage procedures. We reviewed full-text papers and those with an abstract in English published from 1966 through 2011 that reported the success rate of infection eradication after one-stage or two-stage revision with two different types of spacers. In all, 6 original articles reporting the results after one-stage knee exchange arthoplasty (n = 204) and 38 papers reporting on two-stage revision (n = 1,421) were reviewed. The average success rate in the eradication of infection was 89.8% after a two-stage revision and 81.9% after a one-stage procedure at a mean follow-up of 44.7 and 40.7 months, respectively. The average infection eradication rate after a two-stage procedure was slightly, although significantly, higher when an articulating spacer rather than a static spacer was used (91.2 versus 87%). The methodological limitations of this study and the heterogeneous material in the studies reviewed notwithstanding, this systematic review shows that, on average, a two-stage procedure is associated with a higher rate of eradication of infection than one-stage revision for septic knee prosthesis and that articulating spacers are associated with a lower recurrence of infection than static spacers at a comparable mean duration of follow-up. IV.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Zero-profile Anchored Spacer Reduces Rate of Dysphagia Compared With ACDF With Anterior Plating.

PubMed

Hofstetter, Christoph P; Kesavabhotla, Kartik; Boockvar, John A

2015-06-01

Retrospective cohort study. To study clinical and radiologic outcomes after anterior cervical discectomy and fusion (ACDF) using a zero-profile anchored spacer compared with a standard interposition graft with anterior plating. Anterior plating increases fusion rates in ACDF but is associated with higher rates of postoperative dysphagia. Reduction of plate thickness or zero-profile fixation of the interposition graft have been suggested to decrease the incidence of postoperative dysphagia. Retrospective cohort study of 70 consecutive patients of whom the first 35 patients underwent ACDF with anterior plating and the remaining patients received an LDR device. Patient demographics, operative details, neurological impairment, complications, and radiographic imaging were reviewed. Dysphagia occurring in the immediate postoperative period and lasting for >3 months was recorded. Both the zero-profile anchored spacer and a standard interposition graft with anterior plating resulted in improvement of neurological outcome at a mean follow-up time of 13.9 months. Fusion rates were found to be similar between ACDF with anterior plating (96.0%) and LDR (95.2%). Evaluation of postoperative radiographs revealed significantly more swelling of the prevertebral space (20.4±0.9 mm) after implantation of an anterior locking plate compared with a zero-profile device (15.6±0.7 mm, P<0.001). This difference remained significant at 6-month follow-up (P=0.035). Seven patients (20%) with ACDF and plating complained about swallowing difficulties beyond 3 months compared with only 1 patient with the LDR device (P=0.027). The severity of dysphagia was mild in all but 2 patients. Both patients with moderate and severe swallowing difficulties had undergone ACDF with anterior plating. Zero-profile anchored spacers lead to similar clinical and radiographic outcomes compared with ACDF with plating and may carry a lower risk of postoperative dysphagia.

Spin-lattice relaxation of optically polarized nuclei in p -type GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Cherbunin, R. V.; Sokolov, P. S.; Yakovlev, D. R.; Bayer, M.; Suter, D.; Kavokin, K. V.

2018-04-01

Spin-lattice relaxation of the nuclear spin system in p -type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time T1 of optically pumped nuclei "in the dark," that is, in the absence of illumination. The measured T1 values fall into the subsecond time range, being three orders of magnitude shorter than in earlier studied n -type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependencies of T1 in p -GaAs, showing no similarity to those in n -GaAs. This unexpected behavior finds its explanation in the spatial selectivity of the optical pumping in p -GaAs, that is only efficient in the vicinity of shallow donors, together with the quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs. The developed theoretical model explains the whole set of experimental results.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

NASA Astrophysics Data System (ADS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-12-01

Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

Articulating spacers used in two-stage revision of infected hip and knee prostheses abrade with time.

PubMed

Fink, Bernd; Rechtenbach, Annett; Büchner, Hubert; Vogt, Sebastian; Hahn, Michael

2011-04-01

Articulating spacers used in two-stage revision surgery of infected prostheses have the potential to abrade and subsequently induce third-body wear of the new prosthesis. We asked whether particulate material abraded from spacers could be detected in the synovial membrane 6 weeks after implantation when the spacers were removed for the second stage of the revision. Sixteen hip spacers (cemented prosthesis stem articulating with a cement cup) and four knee spacers (customized mobile cement spacers) were explanted 6 weeks after implantation and the synovial membranes were removed at the same time. The membranes were examined by xray fluorescence spectroscopy, xray diffraction for the presence of abraded particles originating from the spacer material, and analyzed in a semiquantitative manner by inductively coupled plasma mass spectrometry. Histologic analyses also were performed. We found zirconium dioxide in substantial amounts in all samples, and in the specimens of the hip synovial lining, we detected particles that originated from the metal heads of the spacers. Histologically, zirconium oxide particles were seen in the synovial membrane of every spacer and bone cement particles in one knee and two hip spacers. The observations suggest cement spacers do abrade within 6 weeks. Given the presence of abrasion debris, we recommend total synovectomy and extensive lavage during the second-stage reimplantation surgery to minimize the number of abraded particles and any retained bacteria.

Implementation and Performance of GaAs Digital Signal Processing ASICs

NASA Technical Reports Server (NTRS)

Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

1993-01-01

The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

DTIC Science & Technology

1994-02-28

from the bandgap discontinuity (as was proposed in my publications [1,2]). Also, by using superlattice structure A1GaAs / GaAs: Er / AlGaAs, we could...n ipact ightemiting evic 10 3. The AlGaAs/GaAs: Er/A1GaAs superlattice structure. For the first time we designed the unipolar n’ - superlattice - n...structure as shown in Figure 5. The GaAs: Er/Alo.45Gao.55As superlattice was grown by MBE on an n’ GaAs: Si substrate. It consisted of 60 periods of

CRISPR interference and priming varies with individual spacer sequences

PubMed Central

Xue, Chaoyou; Seetharam, Arun S.; Musharova, Olga; Severinov, Konstantin; J. Brouns, Stan J.; Severin, Andrew J.; Sashital, Dipali G.

2015-01-01

CRISPR–Cas (clustered regularly interspaced short palindromic repeats-CRISPR associated) systems allow bacteria to adapt to infection by acquiring ‘spacer’ sequences from invader DNA into genomic CRISPR loci. Cas proteins use RNAs derived from these loci to target cognate sequences for destruction through CRISPR interference. Mutations in the protospacer adjacent motif (PAM) and seed regions block interference but promote rapid ‘primed’ adaptation. Here, we use multiple spacer sequences to reexamine the PAM and seed sequence requirements for interference and priming in the Escherichia coli Type I-E CRISPR–Cas system. Surprisingly, CRISPR interference is far more tolerant of mutations in the seed and the PAM than previously reported, and this mutational tolerance, as well as priming activity, is highly dependent on spacer sequence. We identify a large number of functional PAMs that can promote interference, priming or both activities, depending on the associated spacer sequence. Functional PAMs are preferentially acquired during unprimed ‘naïve’ adaptation, leading to a rapid priming response following infection. Our results provide numerous insights into the importance of both spacer and target sequences for interference and priming, and reveal that priming is a major pathway for adaptation during initial infection. PMID:26586800

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Crystal growth of GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

1984-01-01

It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

Under Pressure: The Utility of Spacers in Univalved Fiberglass Casts.

PubMed

Kleis, Kevin; Schlechter, John A; Doan, Joshua D; Farnsworth, Christine L; Edmonds, Eric W

2017-02-24

Univalving fiberglass casts after fracture manipulation or extremity surgery reduces the risk of developing compartment syndrome (CS). Previous experiments have demonstrated that univalving decreases intracompartmental pressures (ICPs), but increases the risk for loss of fracture reduction due to altering the mechanical properties of the cast. The purpose of this study was to correlate cast valve width within a univalved cast model to decreasing ICP. Saline bags (1 L) were covered with stockinette, Webril, and fiberglass tape then connected to an arterial pressure line monitor. Resting pressure was recorded. A water column was added to simulate 2 groups (n=5 each) of clinical CS: low pressure CS (LPCS range, 28 to 31 mm Hg) and high pressure CS (HPCS, range, 64 to 68 mm Hg). After the designated pressure was reached, the fiberglass was cut (stockinette and Webril remained intact). Cast spacers were inserted into each univalve and secured with varying widths: position #1 (3 mm wide), #2 (6 mm), #3 (9 mm), and #4 (12 mm). Pressure was recorded after cutting the fiberglass and following each spacer placement. In LPCS and HPCS groups, after univalve and placement of spacer position #1, pressure dropped by a mean of 52% and 58%, respectively. Spacer #2, decreased the pressure by a mean of 78% and 80%, respectively. Both spacer sizes significantly decreased the underlying pressure in both groups. Spacer #3 and #4 progressively reduced pressure within the cast, but not statistically significantly more than the previous spacer widths. This experimental model replicates the iatrogenic elevation in interstitial compartment pressure due to rigid cast application, not necessarily a self-sustained true CS. Increasing the univalved cast spread by ≥9 mm of the initial cast diameter will reduce pressure to a pre-CS level; however, a spread of only 6 mm can effectively reduce the pressure to <30 mm Hg depending on the initial elevated ICP. Cutting the Webril and stockinette in

Efficient double-emitting layer inverted organic light-emitting devices with different spacer layers

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2017-09-01

Double-emitting layer inverted organic light-emitting devices (IOLEDs) with different spacer layers were investigated, where 2,20,7,70-tetrakis(carbazol-9-yl)-9,9-spirobifluorene (CBP), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 4,40,400-tris(N-carbazolyl)-triphenylamine (TCTA) were used as spacer layers, respectively, and GIr1 and R-4b were used as green and red guest phosphorescent materials, respectively. The results show that the device with BCP spacer layer has the best performance. The maximum current efficiency of the BCP spacer layer device reaches up to 24.15 cd·A-1 when the current density is 3.99 mA·cm-2, which is 1.23 times bigger than that of the CBP spacer layer device. The performance is better than that of corresponding conventional device observably. The color coordinate of the device with BCP spacer layer only changes from (0.625 1, 0.368 0) to (0.599 5, 0.392 8) when the driving voltage increases from 6 V to 10 V, so it shows good stability in color coordinate, which is due to the adoption of the co-doping evaporation method for cladding luminous layer and the effective restriction of spacer layer to carriers in emitting layer.

A model for proton-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

1982-01-01

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

High efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1977-01-01

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, Ming Y.; Haas, T. W.

1990-10-01

We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

DFT algorithms for bit-serial GaAs array processor architectures

NASA Technical Reports Server (NTRS)

Mcmillan, Gary B.

1988-01-01

Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Length and sequence heterogeneity in 5S rDNA of Populus deltoides.

PubMed

Negi, Madan S; Rajagopal, Jyothi; Chauhan, Neeti; Cronn, Richard; Lakshmikumaran, Malathi

2002-12-01

The 5S rRNA genes and their associated non-transcribed spacer (NTS) regions are present as repeat units arranged in tandem arrays in plant genomes. Length heterogeneity in 5S rDNA repeats was previously identified in Populus deltoides and was also observed in the present study. Primers were designed to amplify the 5S rDNA NTS variants from the P. deltoides genome. The PCR-amplified products from the two accessions of P. deltoides (G3 and G48) suggested the presence of length heterogeneity of 5S rDNA units within and among accessions, and the size of the spacers ranged from 385 to 434 bp. Sequence analysis of the non-transcribed spacer (NTS) revealed two distinct classes of 5S rDNA within both accessions: class 1, which contained GAA trinucleotide microsatellite repeats, and class 2, which lacked the repeats. The class 1 spacer shows length variation owing to the microsatellite, with two clones exhibiting 10 GAA repeat units and one clone exhibiting 16 such repeat units. However, distance analysis shows that class 1 spacer sequences are highly similar inter se, yielding nucleotide diversity (pi) estimates that are less than 0.15% of those obtained for class 2 spacers (pi = 0.0183 vs. 0.1433, respectively). The presence of microsatellite in the NTS region leading to variation in spacer length is reported and discussed for the first time in P. deltoides.

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Andrade, M. G. C.; Sahu, P. K.

2016-12-01

The symmetrical dual-k spacer technology in hybrid FinFETs has been widely explored for better electrostatic control of the fin-based devices in nanoscale region. Since, high-k tangible spacer materials are broadly became a matter of study due to their better immunity to the short channel effects (SCEs) in nano devices. However, the only cause that restricts the circuit designers from using high-k spacer is the unreasonable increasing fringing capacitances. This work quantitatively analyzed the benefits and drawbacks of considering two different dielectric spacer materials symmetrically in either sides of the channel for the hybrid device. From the demonstrated results, the inclusion of high-k spacer predicts an effective reduction in off-state leakage along with an improvement in drive current. However, these devices have paid the cost in terms of a high total gate-to-gate capacitance (Cgg) that consequently results poor cutoff frequency (fT) and delay.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

PubMed Central

Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

2007-01-01

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Investigation of high efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

1989-01-01

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Enhancement of conductance of GaAs sub-microwires under external stimuli

NASA Astrophysics Data System (ADS)

Qu, Xianlin; Deng, Qingsong; Zheng, Kun

2018-03-01

Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1985-01-01

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Blueish green photoluminescence from nitrided GaAs(100) surfaces

NASA Astrophysics Data System (ADS)

Shimaoka, Goro; Udagawa, Takashi

1999-04-01

Optical and structural studies were made on the Si-doped (100)GaAs surfaces nitrided at a temperature between 650° and 750°C for 15 min in the flowing NH 3 gas. The wavelength of photoluminescence (PL) spectra were observed to be shortened from 820 nm of the GaAs nitrided at 650°C with increasing nitridation temperature. Blueish green PL with wavelengths of approx. 490 nm and 470 nm were emitted from the nitrided surfaces at 700° and 750°C, respectively. Results of AES and SIMS indicated that the surfaces are nitrided as GaAs 1- xN x, (0< x≤1) alloy layer, and the nitrided region also tended to increase as the temperature raised. High-resolution transmission electron microscopic (HRTEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) results showed that films peeled off from the nitrided surfaces consisted mainly of hexagonal, wurtzite-type gallium nitride (GaN) with stacking faults and microtwins.

GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

DTIC Science & Technology

2007-11-01

front and back side processed, unintentionally doped bulk gallium -arsenic (GaAs) Schottky detectors and determined that GaAs detectors with a large...a few materials that fulfill these requirements are gallium -arsenic (GaAs) and cadmium-zinc-tellurium (CdZnTe or CZT). They are viable alternative...Whitehill, C.; Pospíšil, S.; Wilhem, I.; Doležal, Z.; Juergensen, H.; Heuken, M. Development of low-pressure vapour -phase epitaxial GaAs for medical imaging

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Asymmetric underlap spacer layer enabled nanoscale double gate MOSFETs for design of ultra-wideband cascode amplifiers

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2017-10-01

Using extensive numerical analysis we investigate effects of asymmetric sidewall spacers on various device parameters of 20-nm double gate MOSFETs associated with analog/RF applications. Our studies show that the device with underlap drain-side spacer length LED of 10 nm and source-side spacer length LES of 5 nm shows improvement in terms of the peak value of transconductance efficiency, voltage gain Av, unity-gain cut-off frequency fT and maximum frequency of oscillations fMAX by 8.6%, 51.7%, 5% and 10.3%, respectively compared to the symmetric 5 nm underlap spacer device with HfO2 spacer of dielectric constant k = 22. Additionally, a higher spacer dielectric constant increases the peak Av while decreasing both peak fT and fMAX. The detailed physical insight is exploited to design a cascode amplifier which yields an ultra-wide gain bandwidth of 2.48 THz at LED = 10 nm with a SiO2 spacer.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Concepts for thin-film GaAs concentrator cells. [for solar photovoltaic space power systems

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Gale, R. P.; Mcclelland, R.; King, B.; Dingle, J.

1989-01-01

The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

Spontaneous CRISPR loci generation in vivo by non-canonical spacer integration

PubMed Central

Nivala, Jeff; Shipman, Seth L.; Church, George M.

2018-01-01

The adaptation phase of CRISPR-Cas immunity depends on the precise integration of short segments of foreign DNA (spacers) into a specific genomic location within the CRISPR locus by the Cas1-Cas2 integration complex. Although off-target spacer integration outside of canonical CRISPR arrays has been described in vitro, no evidence of non-specific integration activity has been found in vivo. Here, we show that non-canonical off-target integrations can occur within bacterial chromosomes at locations that resemble the native CRISPR locus by characterizing hundreds of off-target integration locations within Escherichia coli. Considering whether such promiscuous Cas1-Cas2 activity could have an evolutionary role through the genesis of neo-CRISPR loci, we combed existing CRISPR databases and available genomes for evidence of off-target integration activity. This search uncovered several putative instances of naturally occurring off-target spacer integration events within the genomes of Yersinia pestis and Sulfolobus islandicus. These results are important in understanding alternative routes to CRISPR array genesis and evolution, as well as in the use of spacer acquisition in technological applications. PMID:29379209

Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

PubMed Central

2014-01-01

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

New clustered regularly interspaced short palindromic repeat locus spacer pair typing method based on the newly incorporated spacer for Salmonella enterica.

PubMed

Li, Hao; Li, Peng; Xie, Jing; Yi, Shengjie; Yang, Chaojie; Wang, Jian; Sun, Jichao; Liu, Nan; Wang, Xu; Wu, Zhihao; Wang, Ligui; Hao, Rongzhang; Wang, Yong; Jia, Leili; Li, Kaiqin; Qiu, Shaofu; Song, Hongbin

2014-08-01

A clustered regularly interspaced short palindromic repeat (CRISPR) typing method has recently been developed and used for typing and subtyping of Salmonella spp., but it is complicated and labor intensive because it has to analyze all spacers in two CRISPR loci. Here, we developed a more convenient and efficient method, namely, CRISPR locus spacer pair typing (CLSPT), which only needs to analyze the two newly incorporated spacers adjoining the leader array in the two CRISPR loci. We analyzed a CRISPR array of 82 strains belonging to 21 Salmonella serovars isolated from humans in different areas of China by using this new method. We also retrieved the newly incorporated spacers in each CRISPR locus of 537 Salmonella isolates which have definite serotypes in the Pasteur Institute's CRISPR Database to evaluate this method. Our findings showed that this new CLSPT method presents a high level of consistency (kappa = 0.9872, Matthew's correlation coefficient = 0.9712) with the results of traditional serotyping, and thus, it can also be used to predict serotypes of Salmonella spp. Moreover, this new method has a considerable discriminatory power (discriminatory index [DI] = 0.8145), comparable to those of multilocus sequence typing (DI = 0.8088) and conventional CRISPR typing (DI = 0.8684). Because CLSPT only costs about $5 to $10 per isolate, it is a much cheaper and more attractive method for subtyping of Salmonella isolates. In conclusion, this new method will provide considerable advantages over other molecular subtyping methods, and it may become a valuable epidemiologic tool for the surveillance of Salmonella infections. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

GaAs laser diode pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Conant, L. C.; Reno, C. W.

1974-01-01

A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

A functional analysis of the spacer of V(D)J recombination signal sequences.

PubMed

Lee, Alfred Ian; Fugmann, Sebastian D; Cowell, Lindsay G; Ptaszek, Leon M; Kelsoe, Garnett; Schatz, David G

2003-10-01

During lymphocyte development, V(D)J recombination assembles antigen receptor genes from component V, D, and J gene segments. These gene segments are flanked by a recombination signal sequence (RSS), which serves as the binding site for the recombination machinery. The murine Jbeta2.6 gene segment is a recombinationally inactive pseudogene, but examination of its RSS reveals no obvious reason for its failure to recombine. Mutagenesis of the Jbeta2.6 RSS demonstrates that the sequences of the heptamer, nonamer, and spacer are all important. Strikingly, changes solely in the spacer sequence can result in dramatic differences in the level of recombination. The subsequent analysis of a library of more than 4,000 spacer variants revealed that spacer residues of particular functional importance are correlated with their degree of conservation. Biochemical assays indicate distinct cooperation between the spacer and heptamer/nonamer along each step of the reaction pathway. The results suggest that the spacer serves not only to ensure the appropriate distance between the heptamer and nonamer but also regulates RSS activity by providing additional RAG:RSS interaction surfaces. We conclude that while RSSs are defined by a "digital" requirement for absolutely conserved nucleotides, the quality of RSS function is determined in an "analog" manner by numerous complex interactions between the RAG proteins and the less-well conserved nucleotides in the heptamer, the nonamer, and, importantly, the spacer. Those modulatory effects are accurately predicted by a new computational algorithm for "RSS information content." The interplay between such binary and multiplicative modes of interactions provides a general model for analyzing protein-DNA interactions in various biological systems.

Effects of ultrathin oxides in conducting MIS structures on GaAs

NASA Technical Reports Server (NTRS)

Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

1978-01-01

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

PubMed Central

2012-01-01

We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail. PMID:23043754

Modified energetics and growth kinetics on H-terminated GaAs (110)

NASA Astrophysics Data System (ADS)

Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

2013-10-01

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Large Signal Modeling and Analysis of the GaAs MESFET.

DTIC Science & Technology

1986-07-09

various dimensions and physical parameters. A powerful computer aided design system can be developed by automating the circuit element and parameter...circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly...34. -. ’ Abstract The purpose of this work is to develop a large signal signal lumped circuit model of the GaAs MESFET to aid In the designs of microwave MESFET

Structural and electronic properties of isovalent boron atoms in GaAs

NASA Astrophysics Data System (ADS)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the <110 > directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasil’ev, V. I.; Gagis, G. S., E-mail: galina.gagis@gmail.com; Kuchinskii, V. I.

2015-07-15

Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs{sup 1–x}P{sup x}, GaAs{sup x}Sb{sup 1–x}, and GaP{sup x}Sb{sup 1–x} layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04.

Real-Life Outcomes for Patients with Asthma Prescribed Spacers for Use with Either Extrafine- or Fine-Particle Inhaled Corticosteroids.

PubMed

Guilbert, Theresa W; Colice, Gene; Grigg, Jonathan; van Aalderen, Wim; Martin, Richard J; Israel, Elliot; Postma, Dirkje S; Roche, Nicolas; Phipatanakul, Wanda; Hillyer, Elizabeth V; Evans, Jennifer M; Dolovich, Myrna B; Price, David B

Spacers are often used with pressurized metered-dose inhalers (pMDIs) to eliminate the need for coordinating inhalation with actuation. To investigate the real-life effectiveness of spacers prescribed for use with either extrafine- or fine-particle inhaled corticosteroids (ICSs). This historical matched cohort study examined anonymous medical record data over 2 years (1-year baseline, 1-year outcome) for patients with asthma aged 12 to 80 years initiating ICSs by pMDI with or without prescribed spacer. We compared outcomes for spacer versus no-spacer arms, matched for key baseline and asthma-related characteristics, within 2 ICS cohorts: (1) extrafine-particle ICS (beclomethasone) and (2) fine-particle ICS (fluticasone). Effectiveness end points were compared using conditional regression methods. Matched spacer and no-spacer arms of the extrafine-particle ICS cohort each included 2090 patients (69% females; median age, 46-47 years) and the 2 arms of the fine-particle ICS cohort each included 444 patients (67% females; median age, 45 years). With extrafine-particle ICS, we observed no significant difference between spacer and no-spacer arms in severe exacerbation rate (primary end point): adjusted rate ratio, 1.01 (95% CI, 0.83-1.23). With fine-particle ICS, the severe exacerbation rate ratio with spacers was 0.77 (0.47-1.25). Oropharyngeal candidiasis incidence was low and similar in spacer and no-spacer arms for both ICS cohorts. We found no evidence that prescribed spacer devices are associated with improved asthma outcomes for extrafine- or fine-particle ICS administered by pMDI. These findings challenge long-standing assumptions that spacers should improve pMDI effectiveness and indicate the need for pragmatic trials of spacers in clinical practice. Copyright © 2016 American Academy of Allergy, Asthma & Immunology. Published by Elsevier Inc. All rights reserved.

Using the Secondary Electrons (SE) of scanning electron microscope with NIST`s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sartore, R.G.

1996-12-31

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10% to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The finalmore » measurements were performed were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1. This linescan is an average of 5 linescans in the immediate vicinity to reduce noise levels. A SEM image of the area is shown in Figure 2. To obtain a rough estimate of the slopes of the gate lines at the edges, the sample was tilted to 75 degrees and the image in Figure 3 was obtained. From this figure a rough estimate of the sloped edges, using a protractor, was obtained, approximately 27 degrees, +/-5 degrees.« less

Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation

NASA Astrophysics Data System (ADS)

Alvarez, J.; Kleider, J.-P.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Mariucci, L.; Rubini, S.

2011-08-01

The electrical properties of untreated and hydrogen-irradiated GaAs1-xNx are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs1-xNx increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 °C of H-irradiated GaAs1-xNx restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs1-xNx (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here.

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

NASA Astrophysics Data System (ADS)

Jones, Andrew Marquis

The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully

Do dynamic cement-on-cement knee spacers provide better function and activity during two-stage exchange?

PubMed

Jaekel, David J; Day, Judd S; Klein, Gregg R; Levine, Harlan; Parvizi, Javad; Kurtz, Steven M

2012-09-01

Implantation of an antibiotic bone cement spacer is used to treat infection of a TKA. Dynamic spacers fashioned with cement-on-cement articulating surfaces potentially facilitate patient mobility and reduce bone loss as compared with their static counterparts, while consisting of a biomaterial not traditionally used for load-bearing articulations. However, their direct impact on patient mobility and wear damage while implanted remains poorly understood. We characterized patient activity, surface damage, and porous structure of dynamic cement-on-cement spacers. We collected 22 dynamic and 14 static knee antibiotic cement spacers at revision surgeries at times ranging from 0.5 to 13 months from implantation. For these patients, we obtained demographic data and UCLA activity levels. We characterized surface damage using the Hood damage scoring method and used micro-CT analysis to observe the internal structure, cracking, and porosity of the cement. The average UCLA score was higher for patients with dynamic spacers than for patients with static spacers, with no differences in BMI or age. Burnishing was the only prevalent damage mode on all the bearing surfaces. Micro-CT analysis revealed the internal structure of the spacers was porous and highly inhomogeneous, including heterogeneous dispersion of radiopaque material and cavity defects. The average porosity was 8% (range, 1%-29%) and more than ½ of the spacers had pores greater than 1 mm in diameter. Our observations suggest dynamic, cement-on-cement spacers allow for increased patient activity without catastrophic failure. Despite the antibiotic loading and internal structural inhomogeneity, burnishing was the only prevalent damage mode that could be consistently classified with no evidence of fracture or delamination. The porous structure of the spacers varied highly across the surfaces without influencing the material failure.

MDI with DIY Spacer versus Nebulizer for Bronchodilator Therapy in Children Admitted with Asthmatic Attack.

PubMed

Leelathipkul, Lalit; Tanticharoenwiwat, Pattara; Ithiawatchakul, Jutinan; Prommin, Danu; Sirisalee, Pasu; Junhunee, Parinya; Poachanukoon, Orapan

2016-07-01

Inhaled bronchodilator treatment given via the pressurized metered-dose inhaler (pMDI) with spacer has been recommended for an acute asthma treatment. Unfortunately, most of commercially available spacers are at high cost while a do-it-yourself (DIY) spacer has lower cost as it is made from plastic bottle and siphon pump which are inexpensive and easilyfound materials. This study aims to compare treatment response in nebulizer and DIY spacer used for asthmatic children. A prospective, randomized control study was conducted in children aged 1-15 years old hospitalized for mild to moderate asthmatic attack at Thammasat University Hospital between June 2014 and March 2015. The patients were divided into 2 groups, receiving β2-agonist via nebulization and via pMDI with DIY spacer. Their vital signs and oxygen saturation were monitored and asthma scores were also recorded at admission, 24 hours, 48 hours, and before discharge. The satisfaction of equipment use was evaluated employing questionnaires. 40 childrens were enrolled with male at 72.5% and mean age at 3.1±1.6 years old. There was no significant difference in efficacy of β2-agonist among 2 groups when comparing in consideration of vital signs, oximetry, asthma scores and hospital stay. However, there were significantly different on side effect in which the DIY spacer had less tachycardia and agitation. Satisfaction of parents and healthcare workers were higher in DIY spacer. MDI with DIY spacer was able to be used effectively when compared with nebulization to treat mild to moderate acute exacerbations of asthma in children admitted in hospital.

Membrane-spacer assembly for flow-electrode capacitive deionization

NASA Astrophysics Data System (ADS)

Lee, Ki Sook; Cho, Younghyun; Choo, Ko Yeon; Yang, SeungCheol; Han, Moon Hee; Kim, Dong Kook

2018-03-01

Flow-electrode capacitive deionization (FCDI) is a desalination process designed to overcome the limited desalination capacity of conventional CDI systems due to their fixed electrodes. Such a FCDI cell system is comprised of a current collector, freestanding ion-exchange membrane (IEM), gasket, and spacer for flowing saline water. To simplify the cell system, in this study we combined the membrane and spacer into a single unit, by coating the IEM on a porous ceramic structure that acts as the spacer. The combination of membrane with the porous structure avoids the use of costly freestanding IEM. Furthermore, the FCDI system can be readily scaled up by simply inserting the IEM-coated porous structures in between the channels for flow electrodes. However, coating the IEM on such porous ceramic structures can cause a sudden drop in the treatment capacity, if the coated IEM penetrates the ceramic pores and prevents these pores from acting as saline flow channels. To address this issue, we blocked the larger microscale pores on the outer surface with SiO2 and polymeric multilayers. Thus, the IEM is coated only onto the top surface of the porous structure, while the internal pores remain empty to function as water channels.

Testing a GaAs cathode in SRF gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Kewisch, J.; Ben-Zvi, I.

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs,more » we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the

Design of quantum efficiency measurement system for variable doping GaAs photocathode

NASA Astrophysics Data System (ADS)

Chen, Liang; Yang, Kai; Liu, HongLin; Chang, Benkang

2008-03-01

To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. Through early research, we proved that variable doping structure is executable and practical, and has great potential. In order to optimize variable doping GaAs photocathode preparation techniques and study the variable doping theory deeply, a real-time quantum efficiency measurement system for GaAs Photocathode has been designed. The system uses FPGA (Field-programmable gate array) device, and high speed A/D converter to design a high signal noise ratio and high speed data acquisition card. ARM (Advanced RISC Machines) core processor s3c2410 and real-time embedded system are used to obtain and show measurement results. The measurement precision of photocurrent could reach 1nA, and measurement range of spectral response curve is within 400~1000nm. GaAs photocathode preparation process can be real-time monitored by using this system. This system could easily be added other functions to show the physic variation of photocathode during the preparation process more roundly in the future.

Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

NASA Astrophysics Data System (ADS)

Zytkiewicz, Z. R.; Dobosz, D.; Pawlowska, M.

1999-05-01

Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substrates by liquid phase epitaxy are reported. We show that by introducing Si, Sn or Te impurities to the Ga-As solution the vertical growth rate is reduced while the lateral growth rate is significantly enhanced, which leads to a growth habit modification. Furthermore, the impurity incorporation into the growing layer is different on the upper and side surfaces of the ELO, reflecting the fundamental differences between the lateral and vertical growth modes. This phenomenon can be applied for studying the temporal development of ELO layers.

Electric field effects on the optical properties of buckled GaAs monolayer

NASA Astrophysics Data System (ADS)

Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.

2018-04-01

Buckled GaAs monolayer has a direct band gap semiconductor with energy gap of 1.31 eV in the absence of electric field. When we applied transverse electric field, the value of band gap decreases with increasing of electric field strength. In our previous work [1], it is observed that the buckled GaAs monolayer becomes metallic at 1.3 V/Å. In the present work, we investigate the optical properties such as photon energy-dependent dielectric functions, extinction coefficient, refractive index, absorption spectrum and reflectivity of buckled GaAs monolayer in the semiconducting phase i.e. absence of external electric field and metallic phase i.e. presence of external electric field using density functional theory.

Nuclear spin warm up in bulk n -GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

2016-08-01

We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

Rotor bore and turbine rotor wheel/spacer heat exchange flow circuit

DOEpatents

Caruso, Philip M.; Eldrid, Sacheverel Quentin; Ladhani, Azad A.; DeMania, Alan Richard; Palmer, Gene David; Wilson, Ian David; Rathbun, Lisa Shirley; Akin, Robert Craig

2002-01-01

In a turbine having closed-circuit steam-cooling passages about the rim of the rotor during steady-state operation, compressor discharge air is supplied to the rotor bore for passage radially outwardly into the wheel space cavities between the wheels and spacers. Communicating slots and channels in the spacers and wheels at circumferentially spaced positions enable egress of the compressor discharge air into the hot gas flow path. At turbine startup, cooling air flows through the closed-circuit steam passages to cool the outer rim of the rotor while compressor discharge air pre-warms the wheels and spacers. At steady-state, cooling steam is supplied in the closed-circuit steam-cooling passages and compressor discharge air is supplied through the bore and into the wheel space cavities to cool the rotor.

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2013 CFR

2013-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2012 CFR

2012-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2010 CFR

2010-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2014 CFR

2014-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2011 CFR

2011-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

GaAs Solar Cell Radiation Handbook

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.

1996-01-01

History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

Interface dynamics and crystal phase switching in GaAs nanowires

NASA Astrophysics Data System (ADS)

Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M.

2016-03-01

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

Periodic annealing of radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

1980-01-01

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Interface dynamics and crystal phase switching in GaAs nanowires.

PubMed

Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A; Ross, Frances M

2016-03-17

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Disruption of Higher Order DNA Structures in Friedreich’s Ataxia (GAA)n Repeats by PNA or LNA Targeting

PubMed Central

Bergquist, Helen; Rocha, Cristina S. J.; Álvarez-Asencio, Rubén; Nguyen, Chi-Hung; Rutland, Mark. W.; Smith, C. I. Edvard; Good, Liam; Nielsen, Peter E.; Zain, Rula

2016-01-01

Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigenetic modifications. With the aim of interfering with higher order H-DNA (like) DNA structures within pathological (GAA)n expansions, we examined sequence-specific interaction of peptide nucleic acid (PNA) with (GAA)n repeats of different lengths (short: n=9, medium: n=75 or long: n=115) by chemical probing of triple helical and single stranded regions. We found that a triplex structure (H-DNA) forms at GAA repeats of different lengths; however, single stranded regions were not detected within the medium size pathological repeat, suggesting the presence of a more complex structure. Furthermore, (GAA)4-PNA binding of the repeat abolished all detectable triplex DNA structures, whereas (CTT)5-PNA did not. We present evidence that (GAA)4-PNA can invade the DNA at the repeat region by binding the DNA CTT strand, thereby preventing non-canonical-DNA formation, and that triplex invasion complexes by (CTT)5-PNA form at the GAA repeats. Locked nucleic acid (LNA) oligonucleotides also inhibited triplex formation at GAA repeat expansions, and atomic force microscopy analysis showed significant relaxation of plasmid morphology in the presence of GAA-LNA. Thus, by inhibiting disease related higher order DNA structures in the Frataxin gene, such PNA and LNA oligomers may have potential for discovery of drugs aiming at recovering Frataxin expression. PMID:27846236

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki

2014-06-21

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n{sup +}-GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarizationmore » sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.« less

A comparison of GaAs and Si hybrid solar power systems

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Roberts, A. S., Jr.

1977-01-01

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

NASA Astrophysics Data System (ADS)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

NASA Astrophysics Data System (ADS)

Kaveh Baghbadorani, Masoud

In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au

Basic mechanisms study for MIS solar cell structures on GaAs

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1978-01-01

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2

NASA Astrophysics Data System (ADS)

Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

2017-06-01

Using ab initio calculations, a simple model for GaAs1-xNx vapor-phase epitaxy on (100) surface of GaAs was created. By studying As2 and H2 molecules adsorptions and As/N atom substitutions on (100) GaAs surfaces, we obtain a relative stability diagram of all stable surfaces under varying As2, H2, and N2 conditions. We previously proved that this model could describe the vapor-phase epitaxy of GaAs1-x Nx with simple, fully decomposed, precursors. In this paper, we show that in more complex reaction conditions using monomethylhydrazine (MMHy), and dimethylhydrazine (DMHy), it is still possible to use our model to obtain an accurate description of the temperature and pressure stability domains for each surfaces, linked to chemical beam epitaxy (CBE) growth conditions. Moreover, the different N-incorporation regimes observed experimentally at different temperature can be explain and predict by our model. The use of MMHy and DMHy precursors can also be rationalized. Our model should then help to better understand the conditions needed to obtain an high quality GaAs1-xNx using vapor-phase epitaxy.

Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

NASA Astrophysics Data System (ADS)

Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

2018-02-01

Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

The CRISPR RNA-guided surveillance complex in Escherichia coli accommodates extended RNA spacers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Michelle L.; Jackson, Ryan N.; Denny, Steven R.

Bacteria and archaea acquire resistance to foreign genetic elements by integrating fragments of foreign DNA into CRISPR (clustered regularly interspaced short palindromic repeats) loci. In Escherichia coli, CRISPR-derived RNAs (crRNAs) assemble with Cas proteins into a multi-subunit surveillance complex called Cascade (CRISPR-associated complex for antiviral defense). Cascade recognizes DNA targets via protein-mediated recognition of a protospacer adjacent motif and complementary base pairing between the crRNA spacer and the DNA target. Previously determined structures of Cascade showed that the crRNA is stretched along an oligomeric protein assembly, leading us to ask how crRNA length impacts the assembly and function of thismore » complex. We found that extending the spacer portion of the crRNA resulted in larger Cascade complexes with altered stoichiometry and preserved in vitro binding affinity for target DNA. Longer spacers also preserved the in vivo ability of Cascade to repress target gene expression and to recruit the Cas3 endonuclease for target degradation. Lastly, longer spacers exhibited enhanced silencing at particular target locations and were sensitive to mismatches within the extended region. These findings demonstrate the flexibility of the Type I-E CRISPR machinery and suggest that spacer length can be modified to fine-tune Cascade activity.« less

The CRISPR RNA-guided surveillance complex in Escherichia coli accommodates extended RNA spacers

DOE PAGES

Luo, Michelle L.; Jackson, Ryan N.; Denny, Steven R.; ...

2016-05-12

Bacteria and archaea acquire resistance to foreign genetic elements by integrating fragments of foreign DNA into CRISPR (clustered regularly interspaced short palindromic repeats) loci. In Escherichia coli, CRISPR-derived RNAs (crRNAs) assemble with Cas proteins into a multi-subunit surveillance complex called Cascade (CRISPR-associated complex for antiviral defense). Cascade recognizes DNA targets via protein-mediated recognition of a protospacer adjacent motif and complementary base pairing between the crRNA spacer and the DNA target. Previously determined structures of Cascade showed that the crRNA is stretched along an oligomeric protein assembly, leading us to ask how crRNA length impacts the assembly and function of thismore » complex. We found that extending the spacer portion of the crRNA resulted in larger Cascade complexes with altered stoichiometry and preserved in vitro binding affinity for target DNA. Longer spacers also preserved the in vivo ability of Cascade to repress target gene expression and to recruit the Cas3 endonuclease for target degradation. Lastly, longer spacers exhibited enhanced silencing at particular target locations and were sensitive to mismatches within the extended region. These findings demonstrate the flexibility of the Type I-E CRISPR machinery and suggest that spacer length can be modified to fine-tune Cascade activity.« less

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

PubMed

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Predicting the impact of feed spacer modification on biofouling by hydraulic characterization and biofouling studies in membrane fouling simulators.

PubMed

Siddiqui, A; Lehmann, S; Bucs, Sz S; Fresquet, M; Fel, L; Prest, E I E C; Ogier, J; Schellenberg, C; van Loosdrecht, M C M; Kruithof, J C; Vrouwenvelder, J S

2017-03-01

Feed spacers are an essential part of spiral-wound reverse osmosis (RO) and nanofiltration (NF) membrane modules. Geometric modification of feed spacers is a potential option to reduce the impact of biofouling on the performance of membrane systems. The objective of this study was to evaluate the biofouling potential of two commercially available reference feed spacers and four modified feed spacers. The spacers were compared on hydraulic characterization and in biofouling studies with membrane fouling simulators (MFSs). The virgin feed spacer was characterized hydraulically by their resistance, measured in terms of feed channel pressure drop, performed by operating MFSs at varying feed water flow rates. Short-term (9 days) biofouling studies were carried out with nutrient dosage to the MFS feed water to accelerate the biofouling rate. Long-term (96 days) biofouling studies were done without nutrient dosage to the MFS feed water. Feed channel pressure drop was monitored and accumulation of active biomass was quantified by adenosine tri phosphate (ATP) determination. The six feed spacers were ranked on pressure drop (hydraulic characterization) and on biofouling impact (biofouling studies). Significantly different trends in hydraulic resistance and biofouling impact for the six feed spacers were observed. The same ranking for biofouling impact on the feed spacers was found for the (i) short-term biofouling study with nutrient dosage and the (ii) long-term biofouling study without nutrient dosage. The ranking for hydraulic resistance for six virgin feed spacers differed significantly from the ranking of the biofouling impact, indicating that hydraulic resistance of clean feed spacers does not predict the hydraulic resistance of biofouled feed spacers. Better geometric design of feed spacers can be a suitable approach to minimize impact of biofouling in spiral wound membrane systems. Copyright © 2016 Elsevier Ltd. All rights reserved.

High purity low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1982-01-01

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Insertion of GaAs MMICs into EW systems

NASA Astrophysics Data System (ADS)

Schineller, E. R.; Pospishil, A.; Grzyb, J.

1989-09-01

Development activities on a microwave/mm-wave monolithic IC (MIMIC) program are described, as well as the methodology for inserting these GaAs IC chips into several EW systems. The generic EW chip set developed on the MIMIC program consists of 23 broadband chip types, including amplifiers, oscillators, mixers, switches, variable attenuators, power dividers, and power combiners. These chips are being designed for fabrication using the multifunction self-aligned gate process. The benefits from GaAs IC insertion are quantified by a comparison of hardware units fabricated with existing MIC and digital ECL technology and the same units manufactured with monolithic technology. It is found that major improvements in cost, reliability, size, weight, and performance can be realized. Examples illustrating the methodology for technology insertion are presented.

SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

NASA Astrophysics Data System (ADS)

Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

2010-03-01

A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

Radiation testing of GaAs on CRRES and LIPS experiment

NASA Technical Reports Server (NTRS)

Trumble, T. M.; Masloski, K.

1984-01-01

The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)

NASA Astrophysics Data System (ADS)

McLean, A. B.; Terminello, L. J.; McFeely, F. R.

1989-12-01

The adsorption of atomic F on the cleaved GaAs(110) surface has been studied with use of high-resolution core-level photoelectron spectroscopy by exposing the GaAs(110) surfaces to XeF2, which adsorbs dissociatively, leaving atomic F behind. This surface reaction produces two chemically shifted components in the Ga 3d core-level emission which are attributed to an interfacial monofluoride and a stable trifluoride reaction product, respectively. The As 3d core level develops only one chemically shifted component and from its exposure-dependent behavior it is attributed to an interfacial monofluoride. Least-squares analysis of the core-level line shapes revealed that (i) the F bonds to both the anion and the cation , (ii) the GaF3 component (characteristic of strong interfacial reaction) and the surface core-level shifted component (characteristic of a well ordered, atomically clean surface) are present together over a relatively large range of XeF2 exposures, and (iii) it is the initial disruption of the GaAs(110) surface that is the rate-limiting step in this surface reaction. These results are compared with similar studies of Cl and O adsorption on GaAs(110).

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Enhanced second-harmonic generation from resonant GaAs gratings.

PubMed

de Ceglia, D; D'Aguanno, G; Mattiucci, N; Vincenti, M A; Scalora, M

2011-03-01

We theoretically study second harmonic generation in nonlinear, GaAs gratings. We find large enhancement of conversion efficiency when the pump field excites the guided mode resonances of the grating. Under these circumstances the spectrum near the pump wavelength displays sharp resonances characterized by dramatic enhancements of local fields and favorable conditions for second-harmonic generation, even in regimes of strong linear absorption at the harmonic wavelength. In particular, in a GaAs grating pumped at 1064 nm, we predict second-harmonic conversion efficiencies approximately 5 orders of magnitude larger than conversion rates achievable in either bulk or etalon structures of the same material.

Scanning microwave microscopy applied to semiconducting GaAs structures

NASA Astrophysics Data System (ADS)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin

2015-09-01

A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smoothmore » GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.« less

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1993-12-09

during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate... molecular beam epitaxy (MBE) crystal growth, the GaAs growth rate is highly sensitive to the substrate temperature above 650"C (2], a GaAs/AIGaAs... epitaxial growth technique to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Covalent attachment of TAT peptides and thiolated alkyl molecules on GaAs surfaces.

PubMed

Cho, Youngnam; Ivanisevic, Albena

2005-07-07

Four TAT peptide fragments were used to functionalize GaAs surfaces by adsorption from solution. In addition, two well-studied alkylthiols, mercaptohexadecanoic acid (MHA) and 1-octadecanethiol (ODT) were utilized as references to understand the structure of the TAT peptide monolayer on GaAs. The different sequences of TAT peptides were employed in recognition experiments where a synthetic RNA sequence was tested to verify the specific interaction with the TAT peptide. The modified GaAs surfaces were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS). AFM studies were used to compare the surface roughness before and after functionalization. XPS allowed us to characterize the chemical composition of the GaAs surface and conclude that the monolayers composed of different sequences of peptides have similar surface chemistries. Finally, FT-IRRAS experiments enabled us to deduce that the TAT peptide monolayers have a fairly ordered and densely packed alkyl chain structure. The recognition experiments showed preferred interaction of the RNA sequence toward peptides with high arginine content.

Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

NASA Astrophysics Data System (ADS)

Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

Accelerated GaAs growth through MOVPE for low-cost PV applications

NASA Astrophysics Data System (ADS)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

NASA Astrophysics Data System (ADS)

Elsayed, M.; Krause-Rehberg, R.; Korff, B.; Ratschinski, I.; Leipner, H. S.

2013-08-01

Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450-850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 1016 - 1017 cm-3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is VGaVAs-2CuGa.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Cascaded Ga1-xAlxAs/GaAs solar cell with graded i-region

NASA Astrophysics Data System (ADS)

Mil'shtein, Sam; Halilov, Samed

2018-02-01

In current study we designed p-i-n junction with extended intrinsic layer, where linearly graded Alx Ga1-x As presents variable energy gap so needed for effective harvesting of sun radiation. The design realization involves two regions of compositional structure in the stacking direction. The top AlxGa1-xAs layer of 1 um total thickness has stoichiometric structure x=0.3-0.2d, where depth d runs from 0 to 1 um, topmost 200 nm of which is Be-doped. Bottom AlxGa1-xAs layer of 3 um total thickness has a variable composition of x=0.133-0.033d, d runs from 1 to 4 um, the very bottom of which with 10 nm thickness is Si-doped. On the top surface, there is a 50 nm layer of p+ doped GaAs as a spacer for growing AuGe/Ni anode electrode of 20% surface area, the bottom is coated with AuGe/Ni cathode electrode. The designed cell demonstrates 89% fill factor and 30% conversion efficiency without anti-reflection coating.

Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Emelyanov, V. M.; Rybalchenko, D. V.

Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers inmore » the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.« less

A simple model of space radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stith, J. J.; Stock, L. V.

1983-01-01

A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

NASA Technical Reports Server (NTRS)

Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

2003-01-01

NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

DTIC Science & Technology

1987-08-15

SUPPLEMENTARY NOTATION 17. COSATI CODES 18 SUBJECT TERMS (Corinue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Epitaxy GaAs 9...Zr leiK m I141’ FIGURES 1 . Effect of Growth Parameters on Residual Doping Type ................... 7 2. Photoluminescence Spectrum of a GaAs Epilayer... 1 3 Successful homoepitaxial growth of high purity, unintentionally doped GaAs epilayers by organometallic chemical vapor deposition (OMCVD) has

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Chongbiao; Wang, Bo; Huang, Yupeng

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

The use of the Artelon CMC Spacer for osteoarthritis of the basal joint of the thumb.

PubMed

Richard, Marc J; Lunich, Julie A; Correll, Gretchen R

2014-01-01

Favorable clinical outcomes have been reported with the Artelon CMC Spacer, however, several studies have documented complications with the device. The purpose of this study is to review a single surgeon's experience with the Artelon CMC Spacer for the treatment of basal joint arthritis of the thumb. Five thumbs in 6 patients with symptomatic osteoarthritis of the thumb carpometacarpal (CMC) joint were treated with the Artelon CMC Spacer. The mean age of the patients was 60.8 years old. Patients were followed for a mean of 39.3 months (6-63) post-operatively. Complications occurred in 4 of the 6 thumbs and half of the thumbs required at least one secondary operative procedure. A documented foreign-body reaction was present in 2 of the 6 thumbs. The Artelon CMC Spacer is an interposition material that acts as a biologic spacer for arthritic joints while maintaining mechanical strength. Due to an unacceptably high complication rate, we no longer use the Artelon CMC Spacer for the management of basal joint arthritis of the thumb. 4. Copyright © 2014 Hanley & Belfus. Published by Elsevier Inc. All rights reserved.

Shape memory alloy smart knee spacer to enhance knee functionality: model design and finite element analysis.

PubMed

Gautam, Arvind; Rani, A Bhargavi; Callejas, Miguel A; Acharyya, Swati Ghosh; Acharyya, Amit; Biswas, Dwaipayan; Bhandari, Vasundhra; Sharma, Paresh; Naik, Ganesh R

2016-08-01

In this paper we introduce Shape Memory Alloy (SMA) for designing the tibial part of Total Knee Arthroplasty (TKA) by exploiting the shape-memory and pseudo-elasticity property of the SMA (e.g. NiTi). This would eliminate the drawbacks of the state-of-the art PMMA based knee-spacer including fracture, sustainability, dislocation, tilting, translation and subluxation for tackling the Osteoarthritis especially for the aged people of 45-plus or the athletes. In this paper a Computer Aided Design (CAD) model using SolidWorks for the knee-spacer is presented based on the proposed SMA adopting the state-of-the art industry-standard geometry that is used in the PMMA based spacer design. Subsequently Ansys based Finite Element Analysis is carried out to measure and compare the performance between the proposed SMA based model with the state-of-the art PMMA ones. 81% more bending is noticed in the PMMA based spacer compared to the proposed SMA that would eventually cause fracture and tilting or translation of spacer. Permanent shape deformation of approximately 58.75% in PMMA based spacer is observed compared to recoverable 11% deformation in SMA when same load is applied on both separately.

High temperature GaAs X-ray detectors

NASA Astrophysics Data System (ADS)

Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

2017-12-01

Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2013-09-01

GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, and 1.55 μm which are transmission windows of optical fibers. In this paper, we present the photoluminescence at 1.30 μm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 μm emission is from transitions between the VAs-donor and X-acceptor pairs.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

NASA Astrophysics Data System (ADS)

Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

2012-06-01

GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

PubMed Central

Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

2011-01-01

In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

Negative differential velocity in ultradilute GaAs1-xNx alloys

NASA Astrophysics Data System (ADS)

Vogiatzis, N.; Rorison, J. M.

2011-04-01

We present theoretical results on steady state characteristics in bulk GaAs1-xNx alloys (x ≤ 0.2) using the single electron Monte-Carlo method. Two approaches have been used; the first assumes a GaAs band with a strong nitrogen scattering resonance and the second uses the band anti-crossing model, in which the localized N level interacts with the GaAs band strongly perturbing the conduction band. In the first model we observe two negative differential velocity peaks, the lower one associated with nitrogen scattering while the higher one with polar optical phonon emission accounting for the nonparabolicity effect. In the second model one negative differential velocity peak is observed associated with polar optical phonon emission. Good agreement with experimental low field mobility is obtained from the first model. We also comment on the results from both Models when the intervalley Г → L transfer is accounted for.

Organic light-emitting diodes with a spacer enhanced exciplex emission

NASA Astrophysics Data System (ADS)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

NASA Astrophysics Data System (ADS)

Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

2015-12-01

GaAs(100) c(4×4) surfaces were examined by ab initio calculations, under As2, H2 and N2 gas mixed conditions as a model for GaAs1-xNx vapor-phase epitaxy (VPE) on GaAs(100). Using a simple model consisting of As2 and H2 molecules adsorptions and As/N atom substitutions, it was shown to be possible to examine the crystal growth behavior considering the relative stability of the resulting surfaces against the chemical potential of As2, H2 and N2 gases. Such simple model allows us to draw a picture of the temperature and pressure stability domains for each surfaces that can be linked to specific growth conditions, directly. We found that, using this simple model, it is possible to explain the different N-incorporation regimes observed experimentally at different temperatures, and to predict the transition temperature between these regimes. Additionally, a rational explanation of N-incorporation ratio for each of these regimes is provided. Our model should then lead to a better comprehension and control of the experimental conditions needed to realize a high quality VPE of GaAs1-xNx.

Terahertz pulse induced intervalley scattering in photoexcited GaAs.

PubMed

Su, F H; Blanchard, F; Sharma, G; Razzari, L; Ayesheshim, A; Cocker, T L; Titova, L V; Ozaki, T; Kieffer, J-C; Morandotti, R; Reid, M; Hegmann, F A

2009-06-08

Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, Harry C.; Lagowski, Jacek

1989-01-01

The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

Interplay between total thickness and period thickness in the phonon thermal conductivity of superlattices from the nanoscale to the microscale: Coherent versus incoherent phonon transport

NASA Astrophysics Data System (ADS)

Cheaito, Ramez; Polanco, Carlos A.; Addamane, Sadhvikas; Zhang, Jingjie; Ghosh, Avik W.; Balakrishnan, Ganesh; Hopkins, Patrick E.

2018-02-01

We report on the room temperature thermal conductivity of AlAs-GaAs superlattices (SLs), in which we systematically vary the period thickness and total thickness between 2 -24 nm and 20.1 -2 ,160 nm , respectively. The thermal conductivity increases with the SL thickness and plateaus at a thickness around 200 nm, showing a clear transition from a quasiballistic to a diffusive phonon transport regime. These results demonstrate the existence of classical size effects in SLs, even at the highest interface density samples. We use harmonic atomistic Green's function calculations to capture incoherence in phonon transport by averaging the calculated transmission over several purely coherent simulations of independent SL with different random mixing at the AlAs-GaAs interfaces. These simulations demonstrate the significant contribution of incoherent phonon transport through the decrease in the transmission and conductance in the SLs as the number of interfaces increases. In spite of this conductance decrease, our simulations show a quasilinear increase in thermal conductivity with the superlattice thickness. This suggests that the observation of a quasilinear increase in thermal conductivity can have important contributions from incoherent phonon transport. Furthermore, this seemingly linear slope in thermal conductivity versus SL thickness data may actually be nonlinear when extended to a larger number of periods, which is a signature of incoherent effects. Indeed, this trend for superlattices with interatomic mixing at the interfaces could easily be interpreted as linear when the number of periods is small. Our results reveal that the change in thermal conductivity with period thickness is dominated by incoherent (particlelike) phonons, whose properties are not dictated by changes in the AlAs or GaAs phonon dispersion relations. This work demonstrates the importance of studying both period and sample thickness dependencies of thermal conductivity to understand the

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

PubMed

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Synthetically programmable nanoparticle superlattices using a hollow three-dimensional spacer approach.

PubMed

Auyeung, Evelyn; Cutler, Joshua I; Macfarlane, Robert J; Jones, Matthew R; Wu, Jinsong; Liu, George; Zhang, Ke; Osberg, Kyle D; Mirkin, Chad A

2011-12-11

Crystalline nanoparticle arrays and superlattices with well-defined geometries can be synthesized by using appropriate electrostatic, hydrogen-bonding or biological recognition interactions. Although superlattices with many distinct geometries can be produced using these approaches, the library of achievable lattices could be increased by developing a strategy that allows some of the nanoparticles within a binary lattice to be replaced with 'spacer' entities that are constructed to mimic the behaviour of the nanoparticles they replace, even though they do not contain an inorganic core. The inclusion of these spacer entities within a known binary superlattice would effectively delete one set of nanoparticles without affecting the positions of the other set. Here, we show how hollow DNA nanostructures can be used as 'three-dimensional spacers' within nanoparticle superlattices assembled through programmable DNA interactions. We show that this strategy can be used to form superlattices with five distinct symmetries, including one that has never before been observed in any crystalline material.

Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

2015-09-28

We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

NASA Technical Reports Server (NTRS)

Yao, Huade; Snyder, Paul G.

1991-01-01

A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

A Novel Murine Model of Established Staphylococcal Bone Infection in the Presence of a Fracture Fixation Plate to Study Therapies Utilizing Antibiotic-laden Spacers after Revision Surgery

PubMed Central

Inzana, Jason A.; Schwarz, Edward M.; Kates, Stephen L.; Awad, Hani A.

2014-01-01

Mice are the small animal model of choice in biomedical research due to the low cost and availability of genetically engineered lines. However, the devices utilized in current mouse models of implant-associated bone infection have been limited to intramedullary or trans-cortical pins, which are not amenable to treatments involving extensive debridement of a full-thickness bone loss and placement of a segmental antibiotic spacer. To overcome these limitations, we developed a clinically faithful model that utilizes a locking fracture fixation plate to enable debridement of an infected segmental bone defect (full-thickness osteotomy) during a revision surgery, and investigated the therapeutic effects of placing an antibiotic-laden spacer in the segmental bone defect. To first determine the ideal time point for revision following infection, a 0.7 mm osteotomy in the femoral mid-shaft was stabilized with a radiolucent PEEK fixation plate. The defect was inoculated with bioluminescent Staphylococcus aureus, and the infection was monitored over 14 days by bioluminescent imaging (BLI). Osteolysis and reactive bone formation were assessed by X-ray and micro-computed tomography (micro-CT). The active bacterial infection peaked by 5 days post-inoculation, however the stability of the implant fixation became compromised by 10–14 days post-inoculation due to osteolysis around the screws. Thus, day 7 was defined as the ideal time point to perform the revision surgery. During the revision surgery, the infected tissue was debrided and the osteotomy was widened to 3 mm to place a poly-methyl methacrylate spacer, with or without vancomycin. Half of the groups also received systemic vancomycin for the remaining 21 days of the study. The viable bacteria remaining at the end of the study were measured using colony forming unit assays. Volumetric bone changes (osteolysis and reactive bone formation) were directly measured using micro-CT image analysis. Mice that were treated with

Experimental investigation of millimeter-wave GaAs TED oscillators cooled to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Rydberg, Anders; Kollberg, Erik

1988-03-01

The output power and operating (bias) point for 80-100-GHz GaAs TED oscillators have been investigated for temperatures between 300 and 40 K. It is shown experimentally that the power can be increased by as much as nearly four times by cooling the oscillator. The thermal design of the oscillator was studied for GaAs and InP TED oscillators.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

A study of the nature of the emission centres and mechanisms of radiative recombination in semi-insulating GaAs crystals (in English)

NASA Astrophysics Data System (ADS)

Komarov, V. G.; Motsnyi, F. V.; Motsnyi, V. F.; Zinets, O. S.

The low temperature photoluminescence spectra of semi-insulating GaAs crystals grown by Czochralski method at different technological conditions have been studied. One of the main background impurities in such materials is carbon. The traditional high temperature annealing of semi-insulating GaAs wafers significantly aggravates their structure perfection because near the surface the creation of conductive layers with the thickness of several microns takes place. The fine structure of the bands of 1.514 and 1.490 eV has been registered. This structure caused by a) polariton emission from upper and low polariton branches; b) radiative recombination of free holes on shallow neutral donors (D^0, h); c) radiative recombination of excitons bound to shallow neutral donors (D^0, X) and to shallow carbon acceptors (C^0_{As}, X); d) excitons bound to the point structure defects (d, X); e) electron transitions between the conduction band and shallow neutral carbon acceptor; f) the electron transitions between donor-acceptor pairs in which carbon and possibly zinc are acceptors in the ground 1S_{3/2} state. The lux-intensity dependencies of the polariton emission from upper polariton branch and photoluminescence of (D^0, h), (C^0_{As}, X), (d, X) complexes are in good agreement with the theory. It is shown that one of the best available semi-insulating GaAs materials is a new commercial AGCP-5V material which differs from others by considerable concentration of shallow donors and new acceptors alongside of the known shallow C^0_{As} acceptor centres.

Formation and photoluminescence of GaAs1-xNx dilute nitride achieved by N-implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2014-07-01

In this paper, we present the fabrication of dilute nitride semiconductor GaAs1-xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1 = 0.38% and ximp2 = 0.76%. The GaAs1-xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs1-xNx samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1 = 0.38% and ximp2 = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

PubMed

Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

2004-11-15

The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Vancomycin-Loaded Polymethylmethacrylate Spacers Fail to Eradicate Periprosthetic Joint Infection in a Clinically Representative Mouse Model.

PubMed

Carli, Alberto V; Bhimani, Samrath; Yang, Xu; de Mesy Bentley, Karen L; Ross, F Patrick; Bostrom, Mathias P G

2018-06-06

Periprosthetic joint infection (PJI) remains a devastating complication following total joint arthroplasty. Current animal models of PJI do not effectively recreate the clinical condition and thus provide limited help in understanding why treatments fail. We developed a mouse model of the first-stage surgery of a 2-stage revision for PJI involving a 3-dimensionally printed Ti-6Al-4V implant and a mouse-sized cement spacer that elutes vancomycin. Vancomycin was mixed with polymethylmethacrylate (PMMA) cement and inserted into custom-made mouse-sized spacer molds. Twenty C57BL/6 mice received a proximal tibial implant and an intra-articular injection of 3 × 10 colony-forming units of Staphylococcus aureus Xen36. At 2 weeks, 9 mice underwent irrigation and debridement of the leg with revision of the implant to an articulating vancomycin-loaded PMMA spacer. Postoperatively, mice underwent radiography and serum inflammatory-marker measurements. Following euthanasia of the mice at 6 weeks, bone and soft tissues were homogenized to quantify bacteria within periprosthetic tissues. Implants and articulating spacers were either sonicated to quantify adherent bacteria or examined under scanning electron microscopy (SEM) to characterize the biofilm. Vancomycin-loaded PMMA spacers eluted vancomycin for ≤144 hours and retained antimicrobial activity. Control mice had elevated levels of inflammatory markers, radiographic evidence of septic loosening of the implant, and osseous destruction. Mice treated with a vancomycin-loaded PMMA spacer had significantly lower levels of inflammatory markers (p < 0.01), preserved tibial bone, and no intra-articular purulence. Retrieved vancomycin-loaded spacers exhibited significantly lower bacterial counts compared with implants (p < 0.001). However, bacterial counts in periprosthetic tissue did not significantly differ between the groups. SEM identified S. aureus encased within biofilm on control implants, while vancomycin-loaded spacers

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

NASA Technical Reports Server (NTRS)

Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

1987-01-01

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

NASA Astrophysics Data System (ADS)

Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

2017-12-01

In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

Spectrally resolved localized states in GaAs 1– xBi x

DOE PAGES

Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; ...

2017-02-01

In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs 1-xBi x. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs 1-xBi x. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localizedmore » holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs 1-xBi x alloys.« less

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

2012-06-01

Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes,more » which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.« less

Optical detectors for GaAs MMIC integration: Technology assessment

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.

1989-01-01

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Shape-memory-alloy-based smart knee spacer for total knee arthroplasty: 3D CAD modelling and a computational study.

PubMed

Gautam, Arvind; Callejas, Miguel A; Acharyya, Amit; Acharyya, Swati Ghosh

2018-05-01

This study introduced a shape memory alloy (SMA)-based smart knee spacer for total knee arthroplasty (TKA). Subsequently, a 3D CAD model of a smart tibial component of TKA was designed in Solidworks software, and verified using a finite element analysis in ANSYS Workbench. The two major properties of the SMA (NiTi), the pseudoelasticity (PE) and shape memory effect (SME), were exploited, modelled, and analysed for a TKA application. The effectiveness of the proposed model was verified in ANSYS Workbench through the finite element analysis (FEA) of the maximum deformation and equivalent (von Mises) stress distribution. The proposed model was also compared with a polymethylmethacrylate (PMMA)-based spacer for the upper portion of the tibial component for three subjects with body mass index (BMI) of 23.88, 31.09, and 38.39. The proposed SMA -based smart knee spacer contained 96.66978% less deformation with a standard deviation of 0.01738 than that of the corresponding PMMA based counterpart for the same load and flexion angle. Based on the maximum deformation analysis, the PMMA-based spacer had 30 times more permanent deformation than that of the proposed SMA-based spacer for the same load and flexion angle. The SME property of the lower portion of the tibial component for fixation of the spacer at its position was verified by an FEA in ANSYS. Wherein, a strain life-based fatigue analysis was performed and tested for the PE and SME built spacers through the FEA. Therefore, the SMA-based smart knee spacer eliminated the drawbacks of the PMMA-based spacer, including spacer fracture, loosening, dislocation, tilting or translation, and knee subluxation. Copyright © 2018. Published by Elsevier Ltd.

Immobilization of pectinase on silica-based supports: Impacts of particle size and spacer arm on the activity.

PubMed

Alagöz, Dilek; Tükel, S Seyhan; Yildirim, Deniz

2016-06-01

The pectinase was separately immobilized onto Florisil and nano silica supports through both glutaraldehyde and 3-glyoxypropyltrietoxysilane spacer arms. The effects of spacer arm, particle size of support and ionic liquids on the activities of pectinase preparations were investigated. The immobilization of pectinase onto Florisil and nano silica through 3-glyoxypropyltrietoxysilane spacer arm completely led to inactivation of enzyme; however, 10 and 75% pectinase activity were retained when it was immobilized through glutaraldehyde spacer arm onto Florisil and nano silica, respectively. The pectinase immobilized onto nano silica through glutaraldehyde spacer arm showed 6.3-fold higher catalytic efficiency than that of the pectinase immobilized onto Florisil through same spacer arm. A 2.3-fold increase in thermal stability of pectinase was provided upon immobilization onto nano silica at 35°C. The effects of IL/buffer mixture and volume ratio of IL/buffer mixture on the catalytic activities of free and immobilized pectinase preparations were also tested. All the pectinase preparations showed highest activity in 10% (v/v) 1-butyl-3-methylimidazolium hexafluorophosphate containing medium and their activities significantly affected from the concentration of 1-butyl-3-methylimidazolium hexafluorophosphate. Copyright © 2016 Elsevier B.V. All rights reserved.

Exploring backbone-cation alkyl spacers for multi-cation side chain anion exchange membranes

NASA Astrophysics Data System (ADS)

Zhu, Liang; Yu, Xuedi; Hickner, Michael A.

2018-01-01

In order to systematically study how the arrangement of cations on the side chain and length of alkyl spacers between cations impact the performance of multi-cation AEMs for alkaline fuel cells, a series of polyphenylene oxide (PPO)-based AEMs with different cationic side chains were synthesized. This work resulted in samples with two or three cations in a side chain pendant to the PPO backbone. More importantly, the length of the spacer between cations varied from 3 methylene (-CH2-) (C3) groups to 8 methylene (C8) groups. The highest conductivity, up to 99 mS/cm in liquid water at room temperature, was observed for the triple-cation side chain AEM with pentyl (C5) or hexyl (C6) spacers. The multi-cation AEMs were found to have decreased water uptake and ionic conductivity when the spacer chains between cations were lengthened from pentyl (C5) or hexyl (C6) to octyl (C8) linking groups. The triple-cation membranes with pentyl (C5) or hexyl (C6) groups between cations showed greatest stability after immersion in 1 M NaOH at 80 °C for 500 h.

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

The 20 GHz power GaAs FET development

NASA Technical Reports Server (NTRS)

Crandell, M.

1986-01-01

The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Elastomeric nanoparticle composites covalently bound to Al2O3/GaAs surfaces.

PubMed

Song, Hyon Min; Ye, Peide D; Ivanisevic, Albena

2007-08-28

This article reports the modification of Al2O3/GaAs surfaces with multifunctional soft materials. Siloxane elastomers were covalently bound to dopamine-modified Al2O3/GaAs semiconductor surfaces using MPt (M = Fe, Ni) nanoparticles. The sizes of the monodisperse FePt and NiPt nanoparticles were less than 5 nm. The surfaces of the nanoparticles as well as the Al2O3/GaAs substrates were modified with allyl-functionalized dopamine that utilized a dihydroxy group as a strong ligand. The immobilization of the elastomers was performed via a hydrosilation reaction of the allyl-functionalized dopamines with the siloxane backbones. X-ray photoelectron spectroscopy (XPS) experiments confirmed the covalent bonding of the siloxane elastomers to the oxide layer on the semiconductor surface. Fourier transform-infrared reflection absorption spectroscopy (FT-IRRAS) measurements revealed that the allyl functional groups are bonded to the siloxane backbones. The FT-IRRAS data also showed that the density of the allyl groups on the surface was lower than that of the siloxane backbones. The mechanical properties of the surface-bound nanocomposites were tested using nanoindentation experiments. The nanoindentation data showed that the soft matrix composed of the elastomeric coating on the surfaces behaves differently from the inner, hard Al2O3/GaAs substrate.

Diagnosis Of Persistent Infection In Prosthetic Two-Stage Exchange: PCR analysis of Sonication fluid From Bone Cement Spacers.

PubMed

Mariaux, Sandrine; Tafin, Ulrika Furustrand; Borens, Olivier

2017-01-01

Introduction: When treating periprosthetic joint infections with a two-stage procedure, antibiotic-impregnated spacers are used in the interval between removal of prosthesis and reimplantation. According to our experience, cultures of sonicated spacers are most often negative. The objective of our study was to investigate whether PCR analysis would improve the detection of bacteria in the spacer sonication fluid. Methods: A prospective monocentric study was performed from September 2014 to January 2016. Inclusion criteria were two-stage procedure for prosthetic infection and agreement of the patient to participate in the study. Beside tissues samples and sonication, broad range bacterial PCRs, specific S. aureus PCRs and Unyvero-multiplex PCRs were performed on the sonicated spacer fluid. Results: 30 patients were identified (15 hip, 14 knee and 1 ankle replacements). At reimplantation, cultures of tissue samples and spacer sonication fluid were all negative. Broad range PCRs were all negative. Specific S. aureus PCRs were positive in 5 cases. We had two persistent infections and four cases of infection recurrence were observed, with bacteria different than for the initial infection in three cases. Conclusion: The three different types of PCRs did not detect any bacteria in spacer sonication fluid that was culture-negative. In our study, PCR did not improve the bacterial detection and did not help to predict whether the patient will present a persistent or recurrent infection. Prosthetic 2-stage exchange with short interval and antibiotic-impregnated spacer is an efficient treatment to eradicate infection as both culture- and molecular-based methods were unable to detect bacteria in spacer sonication fluid after reimplantation.

Spacer-length DNA intermediates are associated with Cas1 in cells undergoing primed CRISPR adaptation.

PubMed

Musharova, Olga; Klimuk, Evgeny; Datsenko, Kirill A; Metlitskaya, Anastasia; Logacheva, Maria; Semenova, Ekaterina; Severinov, Konstantin; Savitskaya, Ekaterina

2017-04-07

During primed CRISPR adaptation spacers are preferentially selected from DNA recognized by CRISPR interference machinery, which in the case of Type I CRISPR-Cas systems consists of CRISPR RNA (crRNA) bound effector Cascade complex that locates complementary targets, and Cas3 executor nuclease/helicase. A complex of Cas1 and Cas2 proteins is capable of inserting new spacers in the CRISPR array. Here, we show that in Escherichia coli cells undergoing primed adaptation, spacer-sized fragments of foreign DNA are associated with Cas1. Based on sensitivity to digestion with nucleases, the associated DNA is not in a standard double-stranded state. Spacer-sized fragments are cut from one strand of foreign DNA in Cas1- and Cas3-dependent manner. These fragments are generated from much longer S1-nuclease sensitive fragments of foreign DNA that require Cas3 for their production. We propose that in the course of CRISPR interference Cas3 generates fragments of foreign DNA that are recognized by the Cas1-Cas2 adaptation complex, which excises spacer-sized fragments and channels them for insertion into CRISPR array. © The Author(s) 2017. Published by Oxford University Press on behalf of Nucleic Acids Research.

Growth of GaAs crystals from the melt in a partially confined configuration

NASA Technical Reports Server (NTRS)

Gatos, Harry C.; Lagowski, Jacek

1988-01-01

The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Morioka, N.; Mori, S.

2014-02-07

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. Themore » relationship between effective mass and bulk band structure is discussed.« less

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

NASA Technical Reports Server (NTRS)

Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

SPACER: server for predicting allosteric communication and effects of regulation

PubMed Central

Goncearenco, Alexander; Mitternacht, Simon; Yong, Taipang; Eisenhaber, Birgit; Eisenhaber, Frank; Berezovsky, Igor N.

2013-01-01

The SPACER server provides an interactive framework for exploring allosteric communication in proteins with different sizes, degrees of oligomerization and function. SPACER uses recently developed theoretical concepts based on the thermodynamic view of allostery. It proposes easily tractable and meaningful measures that allow users to analyze the effect of ligand binding on the intrinsic protein dynamics. The server shows potential allosteric sites and allows users to explore communication between the regulatory and functional sites. It is possible to explore, for instance, potential effector binding sites in a given structure as targets for allosteric drugs. As input, the server only requires a single structure. The server is freely available at http://allostery.bii.a-star.edu.sg/. PMID:23737445

Cervical interfacet spacers and maintenance of cervical lordosis.

PubMed

Tan, Lee A; Straus, David C; Traynelis, Vincent C

2015-05-01

OBJECT The cervical interfacet spacer (CIS) is a relatively new technology that can increase foraminal height and area by facet distraction. These offer the potential to provide indirect neuroforaminal decompression while simultaneously enhancing fusion potential due to the relatively large osteoconductive surface area and compressive forces exerted on the grafts. These potential benefits, along with the relative ease of implantation during posterior cervical fusion procedures, make the CIS an attractive adjuvant in the management of cervical pathology. One concern with the use of interfacet spacers is the theoretical risk of inducing iatrogenic kyphosis. This work tests the hypothesis that interfacet spacers are associated with loss of cervical lordosis. METHODS Records from patients undergoing posterior cervical fusion at Rush University Medical Center between March 2011 and December 2012 were reviewed. The FacetLift CISs were used in all patients. Preoperative and postoperative radiographic data were reviewed and the Ishihara indices and cervical lordotic angles were measured and recorded. Statistical analyses were performed using STATA software. RESULTS A total of 64 patients were identified in whom 154 cervical levels were implanted with machined allograft interfacet spacers. Of these, 15 patients underwent anterior-posterior fusions, 4 underwent anterior-posterior-anterior fusions, and the remaining 45 patients underwent posterior-only fusions. In the 45 patients with posterior-only fusions, a total of 110 levels were treated with spacers. There were 14 patients (31%) with a single level treated, 16 patients (36%) with two levels treated, 5 patients (11%) with three levels treated, 5 patients (11%) with four levels treated, 1 patient (2%) with five levels treated, and 4 patients (9%) with six levels treated. Complete radiographic data were available in 38 of 45 patients (84%). On average, radiographic follow-up was obtained at 256.9 days (range 48-524 days

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

New dynamic FET logic and serial memory circuits for VLSI GaAs technology

NASA Technical Reports Server (NTRS)

Eldin, A. G.

1991-01-01

The complexity of GaAs field effect transistor (FET) very large scale integration (VLSI) circuits is limited by the maximum power dissipation while the uniformity of the device parameters determines the functional yield. In this work, digital GaAs FET circuits are presented that eliminate the DC power dissipation and reduce the area to 50% of that of the conventional static circuits. Its larger tolerance to device parameter variations results in higher functional yield.

Improved nuclear fuel assembly grid spacer

DOEpatents

Marshall, John; Kaplan, Samuel

1977-01-01

An improved fuel assembly grid spacer and method of retaining the basic fuel rod support elements in position within the fuel assembly containment channel. The improvement involves attachment of the grids to the hexagonal channel and of forming the basic fuel rod support element into a grid structure, which provides a design which is insensitive to potential channel distortion (ballooning) at high fluence levels. In addition the improved method eliminates problems associated with component fabrication and assembly.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Gallium arsenide (GaAs) power conversion concept

NASA Technical Reports Server (NTRS)

Nussberger, A. A.

1980-01-01

A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

How type II CRISPR-Cas establish immunity through Cas1-Cas2-mediated spacer integration.

PubMed

Xiao, Yibei; Ng, Sherwin; Nam, Ki Hyun; Ke, Ailong

2017-10-05

CRISPR (clustered regularly interspaced short palindromic repeats) and the nearby Cas (CRISPR-associated) operon establish an RNA-based adaptive immunity system in prokaryotes. Molecular memory is created when a short foreign DNA-derived prespacer is integrated into the CRISPR array as a new spacer. Whereas the RNA-guided CRISPR interference mechanism varies widely among CRISPR-Cas systems, the spacer integration mechanism is essentially identical. The conserved Cas1 and Cas2 proteins form an integrase complex consisting of two distal Cas1 dimers bridged by a Cas2 dimer. The prespacer is bound by Cas1-Cas2 as a dual-forked DNA, and the terminal 3'-OH of each 3' overhang serves as an attacking nucleophile during integration. The prespacer is preferentially integrated into the leader-proximal region of the CRISPR array, guided by the leader sequence and a pair of inverted repeats inside the CRISPR repeat. Spacer integration in the well-studied Escherichia coli type I-E CRISPR system also relies on the bacterial integration host factor. In type II-A CRISPR, however, Cas1-Cas2 alone integrates spacers efficiently in vitro; other Cas proteins (such as Cas9 and Csn2) have accessory roles in the biogenesis phase of prespacers. Here we present four structural snapshots from the type II-A system of Enterococcus faecalis Cas1 and Cas2 during spacer integration. Enterococcus faecalis Cas1-Cas2 selectively binds to a splayed 30-base-pair prespacer bearing 4-nucleotide 3' overhangs. Three molecular events take place upon encountering a target: first, the Cas1-Cas2-prespacer complex searches for half-sites stochastically, then it preferentially interacts with the leader-side CRISPR repeat, and finally, it catalyses a nucleophilic attack that connects one strand of the leader-proximal repeat to the prespacer 3' overhang. Recognition of the spacer half-site requires DNA bending and leads to full integration. We derive a mechanistic framework to explain the stepwise spacer

The application of zero-profile anchored spacer in anterior cervical discectomy and fusion.

PubMed

Wang, Zhiwen; Jiang, Weimin; Li, Xuefeng; Wang, Heng; Shi, Jinhui; Chen, Jie; Meng, Bin; Yang, Huilin

2015-01-01

We aimed to analyze the clinical efficacy of the zero-profile anchored spacers in the treatment of one-level or two-level cervical degenerative disc disease. From April 2011 to April 2013, a total of 63 consecutive patients with cervical degenerative disc disease who underwent one- or two-level ACDF using either the zero-profile anchored spacer or the stand-alone cages and a titanium plate fixation were reviewed for the radiological and clinical outcomes and complications. The zero-profile anchored spacers were used in 30 patients (anchored group) and stand-alone cages with an anterior cervical plate were implanted in 33 cases (non-anchored group). Operative time, intraoperative blood loss, clinical and radiological results were compared between the anchored group and the non-anchored group. All patients were followed up for at least 12 months. There were not bolt loosening or rupture of anchoring clips, screws or titanium plates observed in two groups during follow-up period. There were no significant difference in neck disability index scores, Japanese Orthopedic Association scores, fusion rate, and cervical lordosis during follow-up between two groups (P > 0.05), but significant difference in the operation time, blood loss and the presence of dysphagia were found (P < 0.05). There were no adjacent disc degeneration and instability observed in two groups. The zero-profile anchored spacer achieved similar clinical outcomes compared to ACDF with anterior plating for the treatment of the cervical degenerative disc disease. However, zero-profile anchored spacer was associated with a lower risk of postoperative dysphagia, shorter operation time, less blood loss, and relatively greater simplicity than the stand-alone cage with a titanium plate.

Custom-made hinged spacers in revision knee surgery for patients with infection, bone loss and instability.

PubMed

Macmull, S; Bartlett, W; Miles, J; Blunn, G W; Pollock, R C; Carrington, R W J; Skinner, J A; Cannon, S R; Briggs, T W R

2010-12-01

Polymethyl methacrylate spacers are commonly used during staged revision knee arthroplasty for infection. In cases with extensive bone loss and ligament instability, such spacers may not preserve limb length, joint stability and motion. We report a retrospective case series of 19 consecutive patients using a custom-made cobalt chrome hinged spacer with antibiotic-loaded cement. The "SMILES spacer" was used at first-stage revision knee arthroplasty for chronic infection associated with a significant bone loss due to failed revision total knee replacement in 11 patients (58%), tumour endoprosthesis in four patients (21%), primary knee replacement in two patients (11%) and infected metalwork following fracture or osteotomy in a further two patients (11%). Mean follow-up was 38 months (range 24-70). In 12 (63%) patients, infection was eradicated, three patients (16%) had persistent infection and four (21%) developed further infection after initially successful second-stage surgery. Above knee amputation for persistent infection was performed in two patients. In this particularly difficult to treat population, the SMILES spacer two-stage technique has demonstrated encouraging results and presents an attractive alternative to arthrodesis or amputation. Copyright © 2009 Elsevier B.V. All rights reserved.

Spacer Facial Artery Musculomucosal Flap: Simultaneous Closure of Oronasal Fistulas and Palatal Lengthening.

PubMed

Lee, Jonathan Y; Alizadeh, Kaveh

2016-01-01

In this series, the authors describe a modification of the facial artery musculomucosal flap for oronasal fistula repair. The spacer facial artery musculomucosal flap technique is characterized by a pedicle inset into the retromolar trigone and palate, obviating a second operative stage. This was performed in 14 patients with a 5.2-cm mean fistula size. Average follow-up was 4.3 years, with one partial flap necrosis but no recurrent oronasal fistula. There was a mean decrease of 18 percent in the distance between the velum and the posterior pharyngeal wall. The spacer facial artery musculomucosal flap provides a single-stage reconstruction of oronasal fistula while lengthening the palate through a pushback mechanism. Although further study of velopharyngeal function is needed, the spacer facial artery musculomucosal flap may be beneficial for patients with a short velum and an oronasal fistula. Therapeutic, IV.

Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] in the Turkish population.

PubMed

Atalay, Ayfer; Koyuncu, Hasan; Köseler, Aylin; Ozkan, Anzel; Atalay, Erol O

2007-01-01

Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] is a rare variant first reported in Yugoslavia and then in Turkey, Australia and New Zealand. We report two further unrelated cases from Turkey. The importance of identifying Hb Beograd at the molecular level, especially in regions where Hb D-Los Angeles [beta121(GH4)Glu-->Gln, GAA-->CAA] is prevalent, is emphasized.

Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruhn, Thomas; Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str.9, 12489 Berlin; Fimland, Bjørn-Ove

We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. Onmore » the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.« less

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Janousek, B. K.; Francis, R. W.; Wendt, J. P.

1985-01-01

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Sn nanothreads in GaAs: experiment and simulation

NASA Astrophysics Data System (ADS)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Monolithic GaAs dual-gate FET phase shifter

NASA Astrophysics Data System (ADS)

Kumar, M.; Subbarao, S. N.; Menna, R.

1981-09-01

The objective of this program is to develop a monolithic GaAs dual-gate FET phase shifter, operating over the 4- to 8-GHz frequency band and capable of a continuously programmable phase shift from 0 deg through N times 360 deg where N is an integer. The phase shift is to be controllable to within +3 deg. This phase shifter will be capable of delivering an output power up to 0 dBm with an input and output VSWR of less than 1.5:1. Progress 1: The photomask of a 0 to 90 deg monolithic GaAs dual-gate FET phase shifter has been procured, and we are in the process of fabricating the phase shifter. 2: We have designed and fabricated a 50 ohm, 4-line interdigitated coupler. Also, we have designed and fabricated a 25-ohm, 6-line interdigitated coupler. The performance of both couplers agrees quite well with the theoretical results. Technical Problems: there was no major problem during this period.

28 percent efficient GaAs concentrator solar cells

NASA Technical Reports Server (NTRS)

Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

1988-01-01

AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

NASA Technical Reports Server (NTRS)

Leon, Rosa P.; Piszczor, Michael F., Jr.

1985-01-01

The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

NASA Technical Reports Server (NTRS)

Campbell, L.; Purviance, J.

1992-01-01

A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

GaAs monolithic RF modules for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Cauley, Michael A.

1991-01-01

Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandhi, S. K.

1981-01-01

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Photoluminescence Study of N-Type Thermal Conversion in Semi-Insulating GaAs.

DTIC Science & Technology

1982-12-01

free electron to the crystal. For example, in GaAs, a tellurium atom on an arsenic site (TeAs) or a silicon atom on a gallium site (SiGa) are donor atoms...Photoconductivity Photoluminescenc Silicon, SiGa 5.81 6.80 Germanium, GeGa 6.08 Sulfur, SAs 6.10 Selenium, SeAs 5.89 6.10 Tellurium , TeAs When an electron...34 to the neutral donor or acceptor (Ref 16:15). The following excitonic com- plexes have been observed in GaAs: (i) exciton bound to a neutron donor at

Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

PubMed

Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

2012-06-01

The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

PubMed

Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

2017-03-01

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

NASA Astrophysics Data System (ADS)

Rozahun, Ilmira; Bahti, Tohtiaji; He, Guijie; Ghupur, Yasenjan; Ablat, Abduleziz; Mamat, Mamatrishat

2018-05-01

Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAs) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs monolayer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices.

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

1986-01-01

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Displacement damage and predicted non-ionizing energy loss in GaAs

NASA Astrophysics Data System (ADS)

Gao, Fei; Chen, Nanjun; Hernandez-Rivera, Efrain; Huang, Danhong; LeVan, Paul D.

2017-03-01

Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been applied to study the defect production for lattice atom recoil energies from 500 eV to 20 keV in gallium arsenide (GaAs). At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters. However, a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies larger than 2 keV. The results reveal a non-linear defect production that increases with the PKA energy. The damage density within a cascade core is evaluated, and used to develop a model that describes a new energy partition function. Based on the MD results, we have developed a model to determine the non-ionizing energy loss (NIEL) in GaAs, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The calculated NIEL predictions are compared with the available data, thus validating the NIEL model developed in this study.

On the Origin of Reverse Transcriptase-Using CRISPR-Cas Systems and Their Hyperdiverse, Enigmatic Spacer Repertoires.

PubMed

Silas, Sukrit; Makarova, Kira S; Shmakov, Sergey; Páez-Espino, David; Mohr, Georg; Liu, Yi; Davison, Michelle; Roux, Simon; Krishnamurthy, Siddharth R; Fu, Becky Xu Hua; Hansen, Loren L; Wang, David; Sullivan, Matthew B; Millard, Andrew; Clokie, Martha R; Bhaya, Devaki; Lambowitz, Alan M; Kyrpides, Nikos C; Koonin, Eugene V; Fire, Andrew Z

2017-07-11

Cas1 integrase is the key enzyme of the clustered regularly interspaced short palindromic repeat (CRISPR)-Cas adaptation module that mediates acquisition of spacers derived from foreign DNA by CRISPR arrays. In diverse bacteria, the cas1 gene is fused (or adjacent) to a gene encoding a reverse transcriptase (RT) related to group II intron RTs. An RT-Cas1 fusion protein has been recently shown to enable acquisition of CRISPR spacers from RNA. Phylogenetic analysis of the CRISPR-associated RTs demonstrates monophyly of the RT-Cas1 fusion, and coevolution of the RT and Cas1 domains. Nearly all such RTs are present within type III CRISPR-Cas loci, but their phylogeny does not parallel the CRISPR-Cas type classification, indicating that RT-Cas1 is an autonomous functional module that is disseminated by horizontal gene transfer and can function with diverse type III systems. To compare the sequence pools sampled by RT-Cas1-associated and RT-lacking CRISPR-Cas systems, we obtained samples of a commercially grown cyanobacterium- Arthrospira platensis Sequencing of the CRISPR arrays uncovered a highly diverse population of spacers. Spacer diversity was particularly striking for the RT-Cas1-containing type III-B system, where no saturation was evident even with millions of sequences analyzed. In contrast, analysis of the RT-lacking type III-D system yielded a highly diverse pool but reached a point where fewer novel spacers were recovered as sequencing depth was increased. Matches could be identified for a small fraction of the non-RT-Cas1-associated spacers, and for only a single RT-Cas1-associated spacer. Thus, the principal source(s) of the spacers, particularly the hypervariable spacer repertoire of the RT-associated arrays, remains unknown. IMPORTANCE While the majority of CRISPR-Cas immune systems adapt to foreign genetic elements by capturing segments of invasive DNA, some systems carry reverse transcriptases (RTs) that enable adaptation to RNA molecules. From

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

First results from GaAs double-sided detectors

NASA Astrophysics Data System (ADS)

Beaumont, S. P.; Bertin, R.; Booth, C. N.; Buttar, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F. H.; D'Auria, S.; del Papa, C.; Dogru, M.; Edwards, M.; Foster, F.; Francescato, A.; Gowdy, S.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B. K.; Lynch, J. G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P. G.; Raine, C.; Santana, J.; Saunders, I. J.; Seller, P. H.; Shankar, K.; Sharp, P. H.; Skillicorn, I. O.; Sloan, T.; Smith, K. M.; ten Have, I.; Turnbull, R. M.; Vanni, U.; Zichichi, A.

1994-09-01

Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10 14 neutrons cm -2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

Expanded GAA repeats impair FXN gene expression and reposition the FXN locus to the nuclear lamina in single cells.

PubMed

Silva, Ana M; Brown, Jill M; Buckle, Veronica J; Wade-Martins, Richard; Lufino, Michele M P

2015-06-15

Abnormally expanded DNA repeats are associated with several neurodegenerative diseases. In Friedreich's ataxia (FRDA), expanded GAA repeats in intron 1 of the frataxin gene (FXN) reduce FXN mRNA levels in averaged cell samples through a poorly understood mechanism. By visualizing FXN expression and nuclear localization in single cells, we show that GAA-expanded repeats decrease the number of FXN mRNA molecules, slow transcription, and increase FXN localization at the nuclear lamina (NL). Restoring histone acetylation reverses NL positioning. Expanded GAA-FXN loci in FRDA patient cells show increased NL localization with increased silencing of alleles and reduced transcription from alleles positioned peripherally. We also demonstrate inefficiencies in transcription initiation and elongation from the expanded GAA-FXN locus at single-cell resolution. We suggest that repressive epigenetic modifications at the expanded GAA-FXN locus may lead to NL relocation, where further repression may occur. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Filter holder assembly having extended collar spacer ring

DOEpatents

Alvin, Mary Anne; Bruck, Gerald J.

2002-01-01

A filter holder assembly is provided that utilizes a fail-safe regenerator unit with an annular spacer ring having an extended metal collar for containment and positioning of a compliant ceramic gasket used in the assembly. The filter holder assembly is disclosed for use with advanced composite, filament wound, and metal candle filters.

Spacer length impacts the efficacy of targeted docetaxel conjugates in prostate-specific membrane antigen expressing prostate cancer.

PubMed

Peng, Zheng-Hong; Sima, Monika; Salama, Mohamed E; Kopečková, Pavla; Kopeček, Jindřich

2013-12-01

Combination of targeted delivery and controlled release is a powerful technique for cancer treatment. In this paper, we describe the design, synthesis, structure validation and biological properties of targeted and non-targeted N-(2-hydroxypropyl)methacrylamide (HPMA) copolymer-docetaxel conjugates. Docetaxel (DTX) was conjugated to HPMA copolymer via a tetrapeptide spacer (-GFLG-). 3-(1,3-dicarboxypropyl)-ureido]pentanedioic acid (DUPA) was used as the targeting moiety to actively deliver DTX for treatment of Prostate-Specific Membrane Antigen (PSMA) expressing prostate cancer. Short and long spacer DUPA monomers were prepared, and four HPMA copolymer--DTX conjugates (non-targeted, two targeted with short spacer of different molecular weight and targeted with long spacer) were prepared via Reversible Addition-Fragmentation Chain Transfer (RAFT) copolymerization. Following confirmation of PSMA expression on C4-2 cell line, the DTX conjugates' in vitro cytotoxicity was tested against C4-2 tumor cells and their anticancer efficacies were assessed in nude mice bearing s.c. human prostate adenocarcinoma C4-2 xenografts. The in vivo results show that the spacer length between targeting moieties and HPMA copolymer backbone can significantly affect the treatment efficacy of DTX conjugates against C4-2 tumor bearing nu/nu mice. Moreover, histological analysis indicated that the DUPA-targeted DTX conjugate with longer spacer had no toxicity in major organs of treated mice.

Spacer length impacts the efficacy of targeted docetaxel conjugates in prostate-specific membrane antigen expressing prostate cancer

PubMed Central

Peng, Zheng-Hong; Sima, Monika; Salama, Mohamed E.; Kopečková, Pavla; Kopeček, Jindřich

2015-01-01

Combination of targeted delivery and controlled release is a powerful technique for cancer treatment. In this paper, we describe the design, synthesis, structure validation and biological properties of targeted and non-targeted N-(2-hydroxypropyl)methacrylamide (HPMA) copolymer-docetaxel conjugates. Docetaxel (DTX) was conjugated to HPMA copolymer via a tetrapeptide spacer (–GFLG-). 3-(1,3-dicarboxypropyl)-ureido]pentanedioic acid (DUPA) was used as the targeting moiety to actively deliver DTX for treatment of Prostate-Specific Membrane Antigen (PSMA) expressing prostate cancer. Short and long spacer DUPA monomers were prepared, and four HPMA copolymer – DTX conjugates (non-targeted, two targeted with short spacer of different molecular weight and targeted with long spacer) were prepared via Reversible Addition-Fragmentation Chain Transfer (RAFT) copolymerization. Following confirmation of PSMA expression on C4-2 cell line, the DTX conjugates’ in vitro cytotoxicity was tested against C4-2 tumor cells and their anticancer efficacies were assessed in nude mice bearing s.c. human prostate adenocarcinoma C4-2 xenografts. The in vivo results show that the spacer length between targeting moieties and HPMA copolymer backbone can significantly affect the treatment efficacy of DTX conjugates against C4-2 tumor bearing nu/nu mice. Moreover, histological analysis indicated that the DUPA-targeted DTX conjugate with longer spacer had no toxicity in major organs of treated mice. PMID:24160903

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Design and implementation of GaAs HBT circuits with ACME

NASA Technical Reports Server (NTRS)

Hutchings, Brad L.; Carter, Tony M.

1993-01-01

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

MO-AB-BRA-02: Modeling Nanoparticle-Eluting Spacer Degradation During Brachytherapy Application with in Situ Dose-Painting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boateng, F; Ngwa, W; Harvard Medical School, Boston, MA

Purpose: Brachytherapy application with in situ dose-painting using gold nanoparticles (GNP) released from GNP-loaded brachytherapy spacers has been proposed as an innovative approach to increase therapeutic efficacy during brachytherapy. This work investigates the dosimetric impact of slow versus burst release of GNP from next generation biodegradable spacers. Methods: Mathematical models were developed based on experimental data to study the release of GNP from a spacer designed with FDA approved poly(lactic-co-glycolic acid) (PLGA) polymer. The diffusion controlled released process and PLGA polymer degradation kinetics was incorporated in the calculations for the first time. An in vivo determined diffusion coefficient was usedmore » for determining the concentration profiles and corresponding dose enhancement based on initial GNP-loading concentrations of 7 mg/g. Results: The results showed that there is significant delay before the concentration profile of GNP diffusion in the tumor is similar to that when burst release is assumed as in previous studies. For example, in the case of burst release after spacer administration, it took up to 25 days for all the GNP to be released from the spacer using diffusion controlled release process only. However, it took up to 45 days when a combined model for both diffusion and polymer degradation processes was used. Based on the tumor concentration profiles, a significant dose enhancement factor (DEF >20%), could be attained at a tumor distances of 5 mm from a spacer loaded with 10 nm GNP sizes. Conclusion: The results highlight the need to take the slow release of GNP from spacers and factors such as biodegradation of polymers into account in research development of GNP-eluting spacers for brachytherapy applications with in-situ dose-painting using gold nanoparticles. The findings suggest that I-125 may be the more appropriate for such applications given the relatively longer half-live compared to other radioisotopes

Altered stoichiometry Escherichia coli Cascade complexes with shortened CRISPR RNA spacers are capable of interference and primed adaptation

DOE PAGES

Kuznedelov, Konstantin; Mekler, Vladimir; Lemak, Sofia; ...

2016-10-13

The Escherichia coli type I-E CRISPR-Cas system Cascade effector is a multisubunit complex that binds CRISPR RNA (crRNA). Through its 32-nucleotide spacer sequence, Cascade-bound crRNA recognizes protospacers in foreign DNA, causing its destruction during CRISPR interference or acquisition of additional spacers in CRISPR array during primed CRISPR adaptation. Within Cascade, the crRNA spacer interacts with a hexamer of Cas7 subunits. We show that crRNAs with a spacer length reduced to 14 nucleotides cause primed adaptation, while crRNAs with spacer lengths of more than 20 nucleotides cause both primed adaptation and target interference in vivo. Shortened crRNAs assemble into altered-stoichiometry Cascademore » effector complexes containing less than the normal amount of Cas7 subunits. The results show that Cascade assembly is driven by crRNA and suggest that multi-subunit type I CRISPR effectors may have evolved from much simpler ancestral complexes.« less

Altered stoichiometry Escherichia coli Cascade complexes with shortened CRISPR RNA spacers are capable of interference and primed adaptation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznedelov, Konstantin; Mekler, Vladimir; Lemak, Sofia

The Escherichia coli type I-E CRISPR-Cas system Cascade effector is a multisubunit complex that binds CRISPR RNA (crRNA). Through its 32-nucleotide spacer sequence, Cascade-bound crRNA recognizes protospacers in foreign DNA, causing its destruction during CRISPR interference or acquisition of additional spacers in CRISPR array during primed CRISPR adaptation. Within Cascade, the crRNA spacer interacts with a hexamer of Cas7 subunits. We show that crRNAs with a spacer length reduced to 14 nucleotides cause primed adaptation, while crRNAs with spacer lengths of more than 20 nucleotides cause both primed adaptation and target interference in vivo. Shortened crRNAs assemble into altered-stoichiometry Cascademore » effector complexes containing less than the normal amount of Cas7 subunits. The results show that Cascade assembly is driven by crRNA and suggest that multi-subunit type I CRISPR effectors may have evolved from much simpler ancestral complexes.« less

E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fluegel, B.; Mascarenhas, A.; Ptak, A. J.

2007-01-01

An above-band-gap transition E{sub +} is experimentally observed in the dilute GaAs{sub 1-x}Bi{sub x} alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E{sub +} that is observed in GaAs{sub 1-x}N{sub x}, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E{sub +} level observed in GaAs is not the isolated isoelectronic impurity level N{sub x}, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbationmore » of the conduction band L{sub 6}{sup c}.« less

All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling.

PubMed

Lin, Yen-Chih; Mao, Ming-Hua; Lin, You-Ru; Lin, Hao-Hsiung; Lin, Che-An; Wang, Lon A

2014-09-01

We demonstrate ultrafast all-optical switching in GaAs microdisk resonators using a femtosecond pump-probe technique through tapered-fiber coupling. The temporal tuning of the resonant modes resulted from the refractive index change due to photoexcited carrier density variation inside the GaAs microdisk resonator. Transmission through the GaAs microdisk resonator can be modulated by more than 10 dB with a switching time window of 8 ps in the switch-off operation using pumping pulses with energies as low as 17.5 pJ. The carrier lifetime was fitted to be 42 ps, much shorter than that of the bulk GaAs, typically of the order of nanoseconds. The above observation indicates that the surface recombination plays an important role in increasing the switching speed.

Lower Eyelid Retraction Surgery Without Internal Spacer Graft.

PubMed

Taban, Mehryar Ray

2017-02-01

Internal eyelid spacer graft is routinely placed during lower eyelid retraction surgery, which may be unnecessary. To evaluate the efficacy of lower eyelid retraction surgery without internal graft in select cases. Retrospective analysis of patients undergoing reconstructive lower eyelid retraction surgery without internal graft, by one surgeon from 2013 to 2015. Surgical technique included transconjunctival lower eyelid retractor lysis, canthoplasty, and temporary tarsorrhaphy, with or without subperiosteal midface-sub oribularis oculi fat (SOOF) lifting and scar lysis. Eyelids with true lower eyelid middle-lamella shortage were excluded. Analysis included 17 surgeries (11 patients). Eight of 11 patients had undergone at least one previous lower eyelid surgery with resultant lower eyelid retraction and sclera show. Preoperative and postoperative photographs at longest follow-up visit were analyzed with standardized measurements. Patient satisfaction was recorded using questionnaire. Etiologies of lower eyelid retraction included prior lower blepharoplasty, thyroid eye disease, and chronic facial palsy. All 11 patients (17 procedures) demonstrated improvement of lower eyelid position. The mean improvement of marginal reflex distance was 2.2 mm (range, 1.6-2.8 mm). There was one case of mild overcorrection. The average follow-up was 7 months (range, 6 months-2 years). Midface lift was performed for 14 of 17 eyelids. This study demonstrates improvement of lower lid position after lower eyelid retraction surgery without internal eyelid spacer graft in select patients. Most patients in our study had undergone previous lower eyelid blepharoplasty and required midface-SOOF lifting. The author proposes that "routine" placement of lower eyelid internal spacer/graft may not be necessary during lower eyelid retraction surgery. © 2016 The American Society for Aesthetic Plastic Surgery, Inc. Reprints and permission: journals.permissions@oup.com.

Spacer conformation in biologically active molecules. Part 1. Structure and conformational preferences of 2-substituted benzoxazoles

NASA Astrophysics Data System (ADS)

Czylkowski, R.; Karolak-Wojciechowska, J.; Mrozek, A.; Yalçin, I.; Aki-Şener, E.

2001-12-01

The mutual position of two pharmacophoric elements in flexible biologically active molecules depends on the spacer conformation. This is true even for a two-atomic chain put to use as a spacer. It was established for 2-substituted-benzoxazoles containing two aromatic centres joined by -CH2-X- (X=S or O). From crystallographic studies of four molecules it was found that the role of heteroatom is essential for the whole molecule conformation. The spacer with X=S adopts the (-)synclinal conformation while for X=O the (+)antiperiplanar one. Such preferences were also found in the statistical data from Cambridge Structural Database (CSD).

(R-X-R)4 -Motif Peptides Containing Conformationally Constrained Cyclohexane-Derived Spacers: Effect on Cellular Uptake.

PubMed

Bhosle, Govind S; Fernandes, Moneesha

2017-11-08

Arginine-rich peptides having the (R-X-R) n motif are among the most effective cell-penetrating peptides (CPPs). Herein we report a several-fold increase in the efficacy of such CPPs if the linear flexible spacer (-X-) in the (R-X-R) motif is replaced by constrained cyclic 1,4-substituted-cyclohexane-derived spacers. Internalization of these oligomers in mammalian cell lines was found to be an energy-dependent process. Incorporation of these constrained, non-proteinogenic amino acid spacers in the CPPs is shown to enhance their proteolytic stability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

RISSC: a novel database for ribosomal 16S–23S RNA genes spacer regions

PubMed Central

García-Martínez, Jesús; Bescós, Ignacio; Rodríguez-Sala, Jesús Javier; Rodríguez-Valera, Francisco

2001-01-01

A novel database, under the acronym RISSC (Ribosomal Intergenic Spacer Sequence Collection), has been created. It compiles more than 1600 entries of edited DNA sequence data from the 16S–23S ribosomal spacers present in most prokaryotes and organelles (e.g. mitochondria and chloroplasts) and is accessible through the Internet (http://ulises.umh.es/RISSC), where systematic searches for specific words can be conducted, as well as BLAST-type sequence searches. Additionally, a characteristic feature of this region, the presence/absence and nature of tRNA genes within the spacer, is included in all the entries, even when not previously indicated in the original database. All these combined features could provide a useful documen­tation tool for studies on evolution, identification, typing and strain characterization, among others. PMID:11125084

Potential of a cyclone prototype spacer to improve in vitro dry powder delivery.

PubMed

Parisini, Irene; Cheng, Sean J; Symons, Digby D; Murnane, Darragh

2014-05-01

Low inspiratory force in patients with lung disease is associated with poor deagglomeration and high throat deposition when using dry powder inhalers (DPIs). The potential of two reverse flow cyclone prototypes as spacers for commercial carrier-based DPIs was investigated. Cyclohaler®, Accuhaler® and Easyhaler® were tested with and without the spacers between 30 and 60 Lmin−1. Deposition of particles in the next generation impactor and within the devices was determined by high performance liquid chromatography. Reduced induction port deposition of the emitted particles from the cyclones was observed due to the high retention of the drug within the spacers (e.g. salbutamol sulphate (SS): 67.89 ± 6.51% at 30 Lmin−1 in Cheng 1). Fine particle fractions of aerosol as emitted from the cyclones were substantially higher than the DPIs alone. Moreover, the aerodynamic diameters of particles emitted from the cyclones were halved compared to the DPIs alone (e.g. SS from the Cyclohaler® at 4 kPa: 1.08 ± 0.05 μm vs. 3.00 ± 0.12 μm, with and without Cheng 2, respectively) and unaltered with increased flow rates. This work has shown the potential of employing a cyclone spacer for commercial carrier-based DPIs to improve inhaled drug delivery.

[Aerosol deposition and clinical performance verified with a spacer device made in Brazil

PubMed

Camargos, P A; Rubim, J A; Simal, C J; Lasmar, L M

2000-01-01

OBJECTIVE: To assess the lung deposition pattern of radioaerosol and the clinical performance of a spacer developed and made in Brazil. METHODS: Qualitative - in a patient with cystic fibrosis - and semi-quantitative - in two healthy volunteers - assessment of pulmonary deposition of (99)mtechnetium was done using the Aerogama Medical oxigen driven nebulizer system attached to the spacer and a gama-camera (Siemens, model Orbiter) connected to a microcomputer. In the next step, clinical assessment was carried out in 50 asthmatic children, aged from four months to 13 years old with an acute attack, using conventional doses of albuterol through a metered dose inhaler attached to the spacer device. RESULTS: Qualitative assessment revealed a lung silhouette comparable with those obtained in the inhalation scintigraphy and semiquantitative assessment reveals that 7.5% to 8.0% of the inhaled (99m)technetium reached the volunteerś lungs. Statistically significant differences (p < 0.001) were observed comparing clinical scores at admission with those verified 20 and 40 minutes after albuterol inhalation; conversely, no significance was obtained for scores taken at 60 and 80 minutes. CONCLUSIONS: Although we used an alternative method, the scintigraphic assessment reveals an expected pattern of pulmonary deposition. Similarly, clinical performance in the treatment of an acute attack showed results comparable with those obtained with other spacers devices.

Dual-gate GaAs FET switches

NASA Astrophysics Data System (ADS)

Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

1981-02-01

A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

How Type II CRISPR-Cas establish immunity through Cas1-Cas2 mediated spacer integration

PubMed Central

Xiao, Yibei; Ng, Sherwin; Nam, Ki Hyun; Ke, Ailong

2017-01-01

CRISPR (Clustered Regularly Interspaced Short Palindromic Repeats) and the nearby cas (CRISPR-associated) operon establish an RNA-based adaptive immunity system in prokaryotes1–5. Molecular memory is created when a short foreign DNA-derived prespacer is integrated into the CRISPR array as a new spacer6–9. Whereas the RNA-guided CRISPR interference mechanism varies widely among CRISPR-Cas systems, the spacer integration mechanism is essentially identical7–9. The conserved Cas1 and Cas2 proteins form an integrase complex consisting two distal Cas1 dimers bridged by a Cas2 dimer in the middle6,10. The prespacer is bound by Cas1-Cas2 as a dual forked DNA, and the terminal 3′-OH of each 3′-overhang serves as an attacking nucleophile during integration11–14. Importantly, the prespacer is preferentially integrated into the leader-proximal region of the CRISPR array1,7,10,15, guided by the leader sequence and a pair of inverted repeats (IRs) inside the CRISPR repeat7,15–20. Spacer integration in the most well-studied Escherichia coli Type I-E CRISPR system further relies on the bacterial Integration Host Factor (IHF)21,22. In Type II-A CRISPR, however, Cas1-Cas2 alone integrates spacer efficiently in vitro18; other Cas proteins (Cas9 and Csn2) play accessory roles in prespacer biogenesis17,23. Focusing on the Enterococcus faecalis Type II-A system24, here we report four structure snapshots of Cas1-Cas2 during spacer integration. EfaCas1-Cas2 selectively binds to a splayed 30-bp prespacer bearing 4-nt 3′-overhangs. Three molecular events take place upon encountering a target: Cas1-Cas2/prespacer first searches for half-sites stochastically, then preferentially interacts with the leader-side CRISPR repeat and catalyzes a nucleophilic attack that connects one strand of the leader-proximal repeat to the prespacer 3′-overhang. Recognition of the spacer half-site requires DNA bending and leads to full integration. We derive a mechanistic framework explaining

Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well

NASA Astrophysics Data System (ADS)

Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy

2018-03-01

We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.

Plasmid DNA-encapsulating liposomes: effect of a spacer between the cationic head group and hydrophobic moieties of the lipids on gene expression efficiency.

PubMed

Obata, Yosuke; Saito, Shunsuke; Takeda, Naoya; Takeoka, Shinji

2009-05-01

We have synthesized a series of cationic amino acid-based lipids having a spacer between the cationic head group and hydrophobic moieties and examined the influence of the spacer on a liposome gene delivery system. As a comparable spacer, a hydrophobic spacer with a hydrocarbon chain composed of 0, 3, 5, 7, or 11 carbons, and a hydrophilic spacer with an oxyethylene chain (10 carbon and 3 oxygen molecules) were investigated. Plasmid DNA (pDNA)-encapsulating liposomes were prepared by mixing an ethanol solution of the lipids with an aqueous solution of pDNA. The zeta potentials and cellular uptake efficiency of the cationic liposomes containing each synthetic lipid were almost equivalent. However, the cationic lipids with the hydrophobic spacer were subject to fuse with biomembrane-mimicking liposomes. 1,5-Dihexadecyl-N-lysyl-N-heptyl-l-glutamate, having a seven carbon atom spacer, exhibited the highest fusogenic potential among the synthetic lipids. Increased fusion potential correlated with enhanced gene expression efficiency. By contrast, an oxyethylene chain spacer showed low gene expression efficiency. We conclude that a hydrophobic spacer between the cationic head group and hydrophobic moieties is a key component for improving pDNA delivery.

Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

2017-10-01

Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to < 11\\bar{1}> . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buckley, Sonia, E-mail: bucklesm@stanford.edu; Radulaski, Marina; Vučković, Jelena

2013-11-18

We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).

PubMed

Seo, Jae Hwa; Yoon, Young Jun; Kang, In Man

2018-09-01

The Ge/GaAs-based heterojunction gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET) have been designed and optimized using technology computer-aided design (TCAD) simulations. In our previous work, the silicon-based A-TFET was designed and demonstrated. However, to progress the electrical characteristics of A-TFET, the III-V compound heterojunction structures which has enhanced electrical properties must be adopted. Thus, the germanium with gallium arsenide (Ge/GaAs) is considered as key materials of A-TFET. The proposed device has a Ge-based p-doped source, GaAs-based i-doped channel and GaAs-based n-doped drain. Due to the critical issues of device performances, the doping concentration of source and channel region (Dsource, Dchannel), height of source region (Hsource) and epitaxially grown thickness of channel (tepi) was selected as design optimization variables of Ge/GaAs-based GAA A-TFET. The DC characteristics such as on-state current (ion), off-state current (ioff), subthreshold-swing (S) were of extracted and analyzed. Finally, the proposed device has a gate length (LG) of 90 nm, Dsource 5 × 1019 cm-3, Dchannel of 1018 cm-3, tepi of 4 nm, Hsource of 90 nm, R of 10 nm and demonstrate an ion of 2 mA/μm, S of 12.9 mV/dec.

WE-FG-BRA-02: Docetaxel Eluting Brachytherapy Spacers for Local Chemo-Radiation Therapy in Prostate Cancer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belz, J; Kumar, R; Sridhar, S

Purpose: We propose an innovative combinatorial treatment strategy of Local ChemoRadiation Therapy (LCRT) using a sustained drug delivery platform in the form of a spacer to locally radio-sensitize the prostate with Docetaxel (DTX) enabling a synergistic cure with the use of lower radiation doses. These biodegradable spacers are physically similar to the inert spacers routinely used in prostate brachytherapy but are now loaded with formulations of DTX. Methods: Spacers were loaded with ∼500µg Docetaxel (DTX) for prostate cancer studies. The implants were characterized in vitro using SEM and HPLC. The release kinetic studies were carried out in buffer (pH 6.0)more » at 37°C. Subcutaneous PC3 tumors were xenografted in nude mice. Prostate cancer studies were done with and without radiation using SARRP at 5Gy, 10Gy, and 15Gy. Drug-loaded implants were injected once intratumorally using an 18G brachytherapy needle. Results: The release study in vitro showed a highly sustained release for multiple weeks at therapeutically relevant doses. The monotherapy with local DTX spacer showed sustained tumor inhibition compared to empty implants and an equivalent DTX dose given systemically. At 40 days, 89% survival was observed for mice treated with DTX implants compared with 0% in all other treatment groups. The combined treatment with local DTX spacer and radiation (10Gy) showed the highest degree of tumor suppression (significant tumor growth inhibition by day 90). The control mice showed continuous tumor growth and were scarified by day 56. Groups of mice treated with DTX-spacer or radiation alone showed initial tumor suppression but growth continued after day 60. A larger experiment is ongoing. Conclusion: This approach provides localized delivery of the chemotherapeutic sensitizer directly to the tumor and avoids the toxicities associated with both brachytherapy and current systemic delivery of docetaxel. Sustained release of DTX is an effective chemotherapy option

Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications

NASA Astrophysics Data System (ADS)

Feng, Ting

Today, GaAs based field effect transistors (FETs) have been used in a broad range of high-speed electronic military and commercial applications. However, their reliability still needs to be improved. Particularly the hydrogen induced degradation is a large remaining issue in the reliability of GaAs FETs, because hydrogen can easily be incorporated into devices during the crystal growth and virtually every device processing step. The main objective of this research work is to develop a new gate metallization system in order to reduce the hydrogen induced degradation from the gate region for GaAs based MESFETs and HEMTs. Cu/Ti gate metallization has been introduced into the GaAs MESFETs and HEMTs in our work in order to solve the hydrogen problem. The purpose of the use of copper is to tie up the hydrogen atoms and prevent hydrogen penetration into the device active region as well as to keep a low gate resistance for low noise applications. In this work, the fabrication technology of GaAs MESFETs and AlGaAs/GaAs HEMTs with Cu/Ti metallized gates have been successfully developed and the fabricated Cu/Ti FETs have shown comparable DC performance with similar Au-based GaAs FETs. The Cu/Ti FETs were subjected to temperature accelerated testing at NOT under 5% hydrogen forming gas and the experimental results show the hydrogen induced degradation has been reduced for the Cu/Ti FETs compared to commonly used AuPtTi based GaAs FETs. A long-term reliability testing for Cu/Ti FETs has also been carried out at 200°C and up to 1000hours and testing results show Cu/Ti FETs performed with adequate reliability. The failure modes were found to consist of a decrease in drain saturation current and pinch-off voltage and an increase in source ohmic contact resistance. Material characterization tools including Rutherford backscattering spectroscopy and a back etching technique were used in Cu/Ti GaAs FETs, and pronounced gate metal copper in-diffusion and intermixing compounds at the

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1986-01-01

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

Surface functionalization of gold nanoparticles using hetero-bifunctional poly(ethylene glycol) spacer for intracellular tracking and delivery

PubMed Central

Shenoy, Dinesh; Fu, Wei; Li, Jane; Crasto, Curtis; Jones, Graham; DiMarzio, Charles; Sridhar, Srinivas; Amiji, Mansoor

2006-01-01

For the development of surface-functionalized gold nanoparticles as cellular probes and delivery agents, we have synthesized hetero-bifunctional poly(ethylene glycol) (PEG, MW 1500) having a thiol group on one terminus and a reactive functional group on the other for use as a flexible spacer. Coumarin, a model fluorescent dye, was conjugated to one end of the PEG spacer and gold nanoparticles were modified with coumarin-PEG-thiol. Surface attachment of coumarin through the PEG spacer decreased the fluorescence quenching effect of gold nanoparticles. The results of cellular cytotoxicity and fluorescence confocal analyses showed that the PEG spacer-modified nanoparticles were essentially non-toxic and could be efficiently internalized in the cells within 1 hour of incubation. Intracellular particle tracking using a Keck 3-D Fusion Microscope System showed that the functionalized gold nanoparticles were rapidly internalized in the cells and localized in the peri-nuclear region. Using the PEG spacer, the gold nano-platform can be conjugated with a variety of biologically relevant ligands such as fluorescent dyes, antibodies, etc in order to target, probe, and induce a stimulus at the target site. PMID:16467923

Development of a new multi-layer insulation blanket with non-interlayer-contact spacer for space cryogenic mission

NASA Astrophysics Data System (ADS)

Miyakita, Takeshi; Hatakenaka, Ryuta; Sugita, Hiroyuki; Saitoh, Masanori; Hirai, Tomoyuki

2014-11-01

For conventional Multi-Layer Insulation (MLI) blankets, it is difficult to control the layer density and the thermal insulation performance degrades due to the increase in conductive heat leak through interlayer contacts. At low temperatures, the proportion of conductive heat transfer through MLI blankets is large compared to that of radiative heat transfer, hence the decline in thermal insulation performance is significant. A new type of MLI blanket using new spacers; the Non-Interlayer-Contact Spacer MLI (NICS MLI) has been developed. This new MLI blanket uses small discrete spacers and can exclude uncertain interlayer contact between films. It is made of polyetheretherketone (PEEK) making it suitable for space use. The cross-sectional area to length ratio of the spacer is 1.0 × 10-5 m with a 10 mm diameter and 4 mm height. The insulation performance is measured with a boil-off calorimeter. Because the NICS MLI blanket can exclude uncertain interlayer contact, the test results showed good agreement with estimations. Furthermore, the NICS MLI blanket shows significantly good insulation performance (effective emissivity is 0.0046 at ordinary temperature), particularly at low temperatures, due to the high thermal resistance of this spacer.

Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

PubMed

Tong, C Z; Yoon, S F

2008-09-10

We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

Burst annealing of high temperature GaAs solar cells

NASA Technical Reports Server (NTRS)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Intercalation of XR5944 with the estrogen response element is modulated by the tri-nucleotide spacer sequence between half-sites

PubMed Central

Sidell, Neil; Mathad, Raveendra I.; Shu, Feng-jue; Zhang, Zhenjiang; Kallen, Caleb B.; Yang, Danzhou

2011-01-01

DNA-intercalating molecules can impair DNA replication, DNA repair, and gene transcription. We previously demonstrated that XR5944, a DNA bis-intercalator, specifically blocks binding of estrogen receptor-α (ERα) to the consensus estrogen response element (ERE). The consensus ERE sequence is AGGTCAnnnTGACCT, where nnn is known as the tri-nucleotide spacer. Recent work has shown that the tri-nucleotide spacer can modulate ERα-ERE binding affinity and ligand-mediated transcriptional responses. To further understand the mechanism by which XR5944 inhibits ERα-ERE binding, we tested its ability to interact with consensus EREs with variable tri-nucleotide spacer sequences and with natural but non-consensus ERE sequences using one dimensional nuclear magnetic resonance (1D 1H NMR) titration studies. We found that the tri-nucleotide spacer sequence significantly modulates the binding of XR5944 to EREs. Of the sequences that were tested, EREs with CGG and AGG spacers showed the best binding specificity with XR5944, while those spaced with TTT demonstrated the least specific binding. The binding stoichiometry of XR5944 with EREs was 2:1, which can explain why the spacer influences the drug-DNA interaction; each XR5944 spans four nucleotides (including portions of the spacer) when intercalating with DNA. To validate our NMR results, we conducted functional studies using reporter constructs containing consensus EREs with tri-nucleotide spacers CGG, CTG, and TTT. Results of reporter assays in MCF-7 cells indicated that XR5944 was significantly more potent in inhibiting the activity of CGG- than TTT-spaced EREs, consistent with our NMR results. Taken together, these findings predict that the anti-estrogenic effects of XR5944 will depend not only on ERE half-site composition but also on the tri-nucleotide spacer sequence of EREs located in the promoters of estrogen-responsive genes. PMID:21333738

High purity, low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1983-01-01

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Femtosecond coherent emission from GaAs bulk microcavities

NASA Astrophysics Data System (ADS)

Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

1999-02-01

The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

Tunneling effect on double potential barriers GaAs and PbS

NASA Astrophysics Data System (ADS)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Commercially available trabecular metal ankle interpositional spacer for tibiotalocalcaneal arthrodesis secondary to severe bone loss of the ankle.

PubMed

Horisberger, Monika; Paul, Jochen; Wiewiorski, Martin; Henninger, Heath B; Khalifa, Muhammad S; Barg, Alexej; Valderrabano, Victor

2014-01-01

Retrograde tibiotalocalcaneal nailing arthrodesis has proved to be a viable salvage procedure; however, extended bone loss around the ankle has been associated with high rates of nonunion and considerable shortening of the hindfoot. We present the surgical technique and the first 2 cases in which a trabecular metal™ interpositional spacer, specifically designed for tibiotalocalcaneal nailing arthrodesis, was used. The spacer can be implanted using either an anterior or a lateral approach. An integrated hole in the spacer allows a retrograde nail to be inserted, which provides excellent primary stability of the construct. Trabecular metal™ is a well-established and well-described material used to supplement deficient bone stock in surgery of the spine, hip, and knee. It has shown excellent incorporation and reduces the need for auto- and allografts. The trabecular metal™ interpositional ankle spacer is the first trabecular metal spacer designed specifically for ankle surgery. Its shape and variable size will make it a valuable tool for reconstructing bone loss in tibiotalocalcaneal nailing arthrodesis. Copyright © 2014 American College of Foot and Ankle Surgeons. Published by Elsevier Inc. All rights reserved.

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

NASA Technical Reports Server (NTRS)

Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

1988-01-01

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

[Cervical adaptation of complete cast crowns of various metal alloys, with and without die spacers].

PubMed

Stephano, C B; Roselino, R F; Roselino, R B; Campos, G M

1989-01-01

A metallic replica from a dental preparation for crown was used to make 8 class-IV stone dies. The wax patterns for the casting of the crowns were obtained in two conditions: a) from the stone die with no spacer; and b) from the stone die with an acrylic spacer. Thus, 64 metallic crowns were casted, using 4 different alloys: DURACAST (Cu-Al), NICROCAST (Ni-Cr) and DURABOND (Ni-Cr), and gold. The casted crowns were fitted in the metallic replica and measured as to the cervical discrepance of fitting. The results showed that the use of die spacers decreases the clinical discrepancies of fitting of the casted crowns (in a statistically significant level), no matter the metallic alloy employed.

Comparison of Efficacy and Complications Among Various Spacer Grafts in the Treatment of Lower Eyelid Retraction: A Systematic Review.

PubMed

Park, Eugene; Lewis, Kevin; Alghoul, Mohammed S

2017-07-01

Lower eyelid retraction is a difficult problem to treat, but it is a prevalent condition and a common complication of blepharoplasty. The use of spacer grafts to increase eyelid height and improve symptoms has been described for a long time, but the optimal choice of spacer graft material is unknown. The authors reviewed the currently available evidence to determine the best available spacer graft material in terms of efficacy and complications. A systematic review of all available literature published between 1985 and the present was performed using the Pubmed, Ovid MEDLINE, and Cochrane library databases. Inclusion criteria were that the studies contain original content assessing the treatment of lower eyelid retraction in humans using a spacer graft and provide quantitative outcomes data. One hundred and twelve articles were reviewed following an initial screen using titles, and 19 articles were chosen for inclusion in this systematic review. Analysis of these articles revealed no spacer graft material that is clearly superior to others. Due to a lack of high quality evidence, this review did not reveal one spacer graft material that is clearly superior to others. However, a narrative summary of the available evidence reveals unique sets of advantages and disadvantages associated with the various materials currently available. Further research in the form of well-designed studies will be necessary to further clarify advantages of certain spacer graft materials over others. 5. © 2017 The American Society for Aesthetic Plastic Surgery, Inc. Reprints and permission: journals.permissions@oup.com

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

NASA Astrophysics Data System (ADS)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

2018-05-01

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. The difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

Diffraction studies of the high pressure phases of GaAs and GaP

NASA Technical Reports Server (NTRS)

Baublitz, M., Jr.; Ruoff, A. L.

1982-01-01

High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive X-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172 + or - 7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal beta-Sn type phase at 215 + or - 8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.

Peri-Prosthetic Knee Infection Management: Spacers Loaded with Two or Three Antibiotic Agents.

PubMed

Ortola, David Joaquin; Fenga, Domenico; Marcellino, Sandra; Rosi, Massimiliano; Centofanti, Francesco; Rosa, Michele Attilio

2017-07-01

The purpose of this work was to compare pre-made antibiotic-loaded spacers with two commercially available antibiotic agents and custom-made cements with three antibiotic agents added. We evaluated: (a) the validity of our procedures, (b) the control of the rate of infection in the long term, (c) complications, and (d) quality of life and patient satisfaction. A retrospective cohort study was performed on 112 consecutively treated patients between January 2010 and December 2013; 56 patients were treated with a pre-formed cement spacer (clindamycin + gentamicin), and 56 patients were treated with a spacer loaded with three antibiotic agents (clindamycin + gentamicin + vancomycin). Demographic data were collected: Classification of infection according to criteria of Cierny-Mader; microbiologic results; number of previous operations; and years of disease. Infection control or relapse after at least 18 months of follow-up was evaluated. Complications were recorded. Every patient completed the SF-36 test and Oxford Knee Score. With a follow-up of 32.87 months (standard deviation 12.04), at the end of treatment, amputation occurred in three of 112 patients because of recurrence of infection, and one patient died from other causes not related to the infection. The study population presented a rate of recurrence of infection of 2.70%. Our results suggest that a two stage re-implant with three antibiotic agents added to the spacer should be considered to avoid rescue procedures, especially in patients with multi-resistant micro-organism infections.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

Capless Annealing of Ion Implanted GaA.

DTIC Science & Technology

1980-12-01

1967). 10. " Thermophysical Properties of Matter," edited by Y. S. Touloukian (Plenum, New York, 1977), v. 13. 11. J. F. Gibbons, W. S. Johnson and S. W...temperatures of 850 C. Using rf spark-source mass spectrometry, an As con- centration in excess of the equilibrium value of As over GaAs at the annealing...38 4.0 SUMMARY AND RECOMMENDATIONS ................... *.* ...... ..... 46 5.0 REFERENCES ..................... *.. o

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

NASA Technical Reports Server (NTRS)

Wilt, David M.; Clark, Eric B.; Ringel, Steven A.; Andre, Carrie L.; Smith, Mark A.; Scheiman, David A.; Jenkins, Phillip P.; Maurer, William F.; Fitzgerald, Eugene A.; Walters, R. J.

2004-01-01

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

PubMed

Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

2012-12-14

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.

GaAs monolithic R.F. modules for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Cauley, Michael A.

1991-01-01

Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2×6) surface

NASA Astrophysics Data System (ADS)

Shimoda, M.; Tsukamoto, S.; Koguchi, N.

1998-01-01

Core-level X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) have been applied to investigate the sulfur-terminated GaAs(001)-(2×6) surface. No forward scattering peaks were found in the XPD pattern of S 2s emission, indicating that adsorbed S atoms form a single layer on the GaAs substrate. In accordance with the zincblende structure of GaAs, the AED patterns of Ga L 3M 45M 45 and As L 3M 45M 45 emission almost coincide with each other, if one of the emissions is rotated by 90° around the [001] direction. This fact suggests that the diffraction patterns mainly reflect the structure of the bulk GaAs crystal. In order to investigate the surface structure, AED patterns in large polar angles were analyzed with single scattering cluster (SSC) calculations. The best result was obtained with a model cluster where the S-S bond length was set at 0.28 nm, 30% shorter than the corresponding length of the ideal (1×1) structure, and the adsorption height was set at 0.12-0.13 nm, 10% shorter than the ideal interlayer distance of GaAs(001) planes. These values are in good agreement with the results of STM measurements. A modulation of the inter-dimer distance was also found, suggesting the existence of missing dimers.

Porous polyurethaneurea (Artelon) joint spacer compared to trapezium resection and ligament reconstruction.

PubMed

Blount, Andrew L; Armstrong, Shannon D; Yuan, Frank; Burgess, Scott D

2013-09-01

To examine outcomes and complications of the porous polyurethaneurea (Artelon; Small Bone Innovations, Morrisville, PA) spacer compared to traditional surgical treatment of trapeziectomy with ligament reconstruction and tendon interposition (LRTI). A retrospective chart review was undertaken of patients with carpometacarpal (CMC) arthritis who had either placement of an Artelon spacer or LRTI. Patients were brought back to clinic for interview and functional testing. Pain was graded using a visual analog scale. Grip and pinch strength, as well as range of motion at the first CMC joint, were measured. Nine-hole peg, Moberg pickup, and Jebson-Taylor tests were performed. Research and Development 36, Michigan Hand Outcomes, and Quick Disabilities of the Arm, Shoulder, and Hand questionnaires were administered. Thirty-eight patients received Artelon implants into the CMC joint, and 6 were lost to follow-up. Twelve of 32 patients (37%) required revision surgery with removal of implant and salvage arthroplasty. Twenty patients with nonrevised Artelon implants were compared with 10 patients who received 13 LRTI procedures. Patients with Artelon had significantly less pain improvement compared to those receiving the LRTI procedure. In addition, satisfaction was significantly decreased. There was no significant difference in any other functional or quality of life measures. In our practice, use of the Artelon joint spacer resulted in an explantation rate of 37%. Due to these findings, we have abandoned its use for treatment of basilar thumb osteoarthritis. In contrast to previous studies, pain and satisfaction are worse in patients with intact Artelon spacers than those who had received LRTI. Copyright © 2013 American Society for Surgery of the Hand. Published by Elsevier Inc. All rights reserved.

Optimization of conditions for thermal smoothing GaAs surfaces

NASA Astrophysics Data System (ADS)

Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S.; Alperovich, V. L.

2018-03-01

GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing "coarse" relief features and the second stage focused on "fine" smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

NASA Technical Reports Server (NTRS)

Ko, K. Y.; Lagowski, J.; Gatos, H. C.

1989-01-01

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Influence of spacer length on heparin coupling efficiency and fibrinogen adsorption of modified titanium surfaces

PubMed Central

Tebbe, David; Thull, Roger; Gbureck, Uwe

2007-01-01

Background Chemical bonding of the drug onto surfaces by means of spacer molecules is accompanied with a reduction of the biological activity of the drug due to a constricted mobility since normally only short spacer molecule like aminopropyltrimethoxysilane (APMS) are used for drug coupling. This work aimed to study covalent attachment of heparin to titanium(oxide) surfaces by varying the length of the silane coupling agent, which should affect the biological potency of the drug due to a higher mobility with longer spacer chains. Methods Covalent attachment of heparin to titanium metal and TiO2 powder was carried out using the coupling agents 3-(Trimethoxysilyl)-propylamine (APMS), N- [3-(Trimethoxysilyl)propyl]ethylenediamine (Diamino-APMS) and N1- [3-(Trimethoxy-silyl)-propyl]diethylenetriamine (Triamino-APMS). The amount of bound coupling agent and heparin was quantified photometrically by the ninhydrin reaction and the tolidine-blue test. The biological potency of heparin was determined photometrically by the chromogenic substrate Chromozym TH and fibrinogen adsorption to the modified surfaces was researched using the QCM-D (Quartz Crystal Microbalance with Dissipation Monitoring) technique. Results Zeta-potential measurements confirmed the successful coupling reaction; the potential of the unmodified anatase surface (approx. -26 mV) shifted into the positive range (> + 40 mV) after silanisation. Binding of heparin results in a strongly negatively charged surface with zeta-potentials of approx. -39 mV. The retaining biological activity of heparin was highest for the spacer molecule Triamino-APMS. QCM-D measurements showed a lower viscosity for adsorbed fibrinogen films on heparinised surfaces by means of Triamino-APMS. Conclusion The remaining activity of heparin was found to be highest for the covalent attachment with Triamino-APMS as coupling agent due to the long chain of this spacer molecule and therefore the highest mobility of the drug. Furthermore, the

Heterogeneous Diversity of Spacers within CRISPR (Clustered Regularly Interspaced Short Palindromic Repeats)

NASA Astrophysics Data System (ADS)

He, Jiankui; Deem, Michael W.

2010-09-01

Clustered regularly interspaced short palindromic repeats (CRISPR) in bacterial and archaeal DNA have recently been shown to be a new type of antiviral immune system in these organisms. We here study the diversity of spacers in CRISPR under selective pressure. We propose a population dynamics model that explains the biological observation that the leader-proximal end of CRISPR is more diversified and the leader-distal end of CRISPR is more conserved. This result is shown to be in agreement with recent experiments. Our results show that the CRISPR spacer structure is influenced by and provides a record of the viral challenges that bacteria face.

Heterogeneous diversity of spacers within CRISPR (clustered regularly interspaced short palindromic repeats).

PubMed

He, Jiankui; Deem, Michael W

2010-09-17

Clustered regularly interspaced short palindromic repeats (CRISPR) in bacterial and archaeal DNA have recently been shown to be a new type of antiviral immune system in these organisms. We here study the diversity of spacers in CRISPR under selective pressure. We propose a population dynamics model that explains the biological observation that the leader-proximal end of CRISPR is more diversified and the leader-distal end of CRISPR is more conserved. This result is shown to be in agreement with recent experiments. Our results show that the CRISPR spacer structure is influenced by and provides a record of the viral challenges that bacteria face.

Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Rabehi, Abdelaziz; Amrani, Mohamed; Benamara, Zineb; Akkal, Boudali; Hatem-Kacha, Arslane; Robert-Goumet, Christine; Monier, Guillaume; Gruzza, Bernard

2015-10-01

This article reports the study of Au/GaN/GaAs Schottky diodes, where the thin GaN film is prepared by nitridation of GaAs substrates with thicknesses of 0.7 and 0.8 nm. The resulting GaN sample with thickness 0.8 nm is then treated with an annealing operation (heating to 620 °C) to improve the current transport. The current-voltage (I-V) and capacitance-voltage (C-V) of the Au/GaN/GaAs structures were investigated at room temperature. In fact, the I-V characteristics show that the annealed sample has low series resistance (Rs) and ideality factor (n) (63 Ω, 2.27 respectively) when compared to the values obtained in the untreated sample (1.83 kΩ, 3.31 respectively). The formation of the GaN layer on the gallium arsenide surface is investigated through calculation of the interface state density NSS with and without the presence of series resistance Rs. The value of the interface state density NSS(E) close to the mid-gap was estimated to be in the order of 4.7×1012 cm-2 eV-1 and 1.02× 1013 cm-2 eV-1 with and without the annealing operation, respectively. However, nitridation with the annealing operation at 620 °C improves the electrical properties of the resultant Schottky diode.

Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

NASA Astrophysics Data System (ADS)

Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

2007-05-01

Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptormore » states in the presence of the midgap state EL2.« less

Trestle #1, detail of stringers and spacers on northeast end ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Trestle #1, detail of stringers and spacers on northeast end of deck. View to southwest - Promontory Route Railroad Trestles, S.P. Trestle 779.91, One mile southwest of junction of State Highway 83 and Blue Creek, Corinne, Box Elder County, UT

GaAs and 3-5 compound solar cells status and prospects for use in space

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.

1984-01-01

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C.

1980-01-01

With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

Optimization of Soft Tissue Management, Spacer Design, and Grafting Strategies for Large Segmental Bone Defects using the Chronic Caprine Tibial Defect Model

DTIC Science & Technology

2016-12-01

gastrocnemius muscles. 4. Place an interlocking intramedullary nail using a custom spacer to maintain 5-cm defect length. 5. Place a pre-molded 5 cm long x...2 cm diameter PMMA spacer around the nail in the defect. 6. Irrigate the wound with normal (0.9 %) saline and close the wound. The Treatment...PMMA spacer using a “bomb bay door opening”. 4. Remove the spacer without damaging the membrane or nail . 5. Collect appropriate IM samples as

Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Zhenchao; Yamamoto, Tatsuya; Kubota, Takahide

2016-06-06

Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm{sup 2}) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm{sup 2}) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observedmore » that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm{sup 2}) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.« less

Comparison of Models for Spacer Grid Pressure Loss in Nuclear Fuel Bundles for One and Two-Phase Flows

NASA Astrophysics Data System (ADS)

Maskal, Alan B.

Spacer grids maintain the structural integrity of the fuel rods within fuel bundles of nuclear power plants. They can also improve flow characteristics within the nuclear reactor core. However, spacer grids add reactor coolant pressure losses, which require estimation and engineering into the design. Several mathematical models and computer codes were developed over decades to predict spacer grid pressure loss. Most models use generalized characteristics, measured by older, less precise equipment. The study of OECD/US-NRC BWR Full-Size Fine Mesh Bundle Tests (BFBT) provides updated and detailed experimental single and two-phase results, using technically advanced flow measurements for a wide range of boundary conditions. This thesis compares the predictions from the mathematical models to the BFBT experimental data by utilizing statistical formulae for accuracy and precision. This thesis also analyzes the effects of BFBT flow characteristics on spacer grids. No single model has been identified as valid for all flow conditions. However, some models' predictions perform better than others within a range of flow conditions, based on the accuracy and precision of the models' predictions. This study also demonstrates that pressure and flow quality have a significant effect on two-phase flow spacer grid models' biases.

Preclinical in vivo long-term evaluation of the novel Mitra-Spacer technology: experimental validation in the ovine model.